Ultra-long Zn{sub 2}SnO{sub 4}-ZnO microwires based gas sensor for hydrogen detection

Energy Technology Data Exchange (ETDEWEB)

Fan, Hong [School of Resources and Civil Engineering, Northeastern University, Shenyang 110819 (China); Xu, Shucong [School of Material Science & Engineering, Shandong University, Jinan 250061 (China); Cao, Xianmin; Liu, Daoxi; Yin, Yaoyu; Hao, Haiyong; Wei, Dezhou [School of Resources and Civil Engineering, Northeastern University, Shenyang 110819 (China); Shen, Yanbai, E-mail: shenyanbai@mail.neu.edu.cn [School of Resources and Civil Engineering, Northeastern University, Shenyang 110819 (China)

2017-04-01

Highlights: • Ultra-long Zn{sub 2}SnO{sub 4}-ZnO microwires with excellent crystallinity and high yield were obtained. • The maximal length-to-diameter ratio of Zn{sub 2}SnO{sub 4}-ZnO microwires is approximately 1500. • Ultra-long Zn{sub 2}SnO{sub 4}-ZnO microwires show outstanding H{sub 2} sensing properties. - Abstract: Ultra-long Zn{sub 2}SnO{sub 4}-ZnO microwires were synthesized by thermal evaporation of the mixture of SnO{sub 2}, ZnO and C powders. Microstructural characterization by means of X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy showed that Zn{sub 2}SnO{sub 4}-ZnO microwires with excellent crystallinity were 2.8–3.2 μm in diameter and 4.0–4.2 mm in length. The maximal length-to-diameter ratio of Zn{sub 2}SnO{sub 4}-ZnO microwires is approximately 1500. H{sub 2} sensing properties showed that Zn{sub 2}SnO{sub 4}-ZnO microwires exhibited not only excellent reversibility to H{sub 2}, but also a good linear relationship between the sensor response and H{sub 2} concentration. The response time and recovery time decreased as the operating temperature increased. The highest sensor response of 9.6 to 1000 ppm H{sub 2} was achieved at an operating temperature of 300 °C. The electron depletion theory was used for explaining H{sub 2} sensing mechanism by the chemical adsorption and reaction of H{sub 2} molecules on the surface of Zn{sub 2}SnO{sub 4}-ZnO microwires.

Low-temperature-fabricated ZnO, AZO, and SnO{sub 2} nanoparticle-based dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Kim, Hong Hee; Park, Cheolmin; Choi, Wonkook; Cho, Sungjae; Moon, Byungjoon; Son, Dongick [Korea Institute of Science and Technology, Seoul (Korea, Republic of); Yonsei University, Seoul (Korea, Republic of)

2014-11-15

The authors investigated the microstructural and the electrical properties of ZnO, AZO, and SnO{sub 2} based dye-sensitized solar cells (DSSCs) fabricated using a low-temperature-processed (200 .deg. C) dyesensitized ZnO, AZO, and SnO{sub 2} nanoparticle thin film and a Pt catalyst deposited on ITO/glass by RF magnetron sputtering. A hydropolymer containing PEG (poly ethylene glycol) and PEO (poly ethylene oxide) is used to make uniformly-distributed ZnO, AZO, and SnO{sub 2} nanoparticle layer which forms a nano porous ZnO, AZO, and SnO{sub 2} network after heat treatment. The layer is then dye sensitized and sandwiched between two electrodes in an electrolyte to make a DSSC device. The highest measured parameters, the short-circuit current density (J{sub sc}), the open circuit potential (V{sub oc}), the fill factor (FF), and power conversion efficiency (η), of the DSSC fabricated wander optimized conditions were observed to be 5.10 mA/cm{sup 2}, 0.61 V, 0.46, and 1.43%, respectively.

High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

International Nuclear Information System (INIS)

Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, L.A.; Watkins, S.P.

2016-01-01

Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-type dopants. Here we present high-resolution photoluminescence (PL) spectroscopy studies of unintentionally doped and Sn-doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I 10 bound exciton transition that was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. The PL linewidths are exceptionally sharp for these samples, enabling a clear identification of several donor species. Temperature-dependent PL measurements of the I 10 line emission energy and intensity dependence reveal a behavior that is similar to other shallow donors in ZnO. Ionized donor bound-exciton and two-electron satellite transitions of the I 10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule) similar to recently observed carbon related donors, and confirming the shallow nature of this defect center, which was recently attributed to a Sn Zn double donor compensated by an unknown single acceptor.

Electrochemical Behavior of Sn-9Zn- xTi Lead-Free Solders in Neutral 0.5M NaCl Solution

Science.gov (United States)

Wang, Zhenghong; Chen, Chuantong; Jiu, Jinting; Nagao, Shijo; Nogi, Masaya; Koga, Hirotaka; Zhang, Hao; Zhang, Gong; Suganuma, Katsuaki

2018-05-01

Electrochemical techniques were employed to study the electrochemical corrosion behavior of Sn-9Zn- xTi ( x = 0, 0.05, 0.1, 0.2 wt.%) lead-free solders in neutral 0.5M NaCl solution, aiming to figure out the effect of Ti content on the corrosion properties of Sn-9Zn, providing information for the composition design of Sn-Zn-based lead-free solders from the perspective of corrosion. EIS results reveal that Ti addition was involved in the corrosion product layer and changed electrochemical interface behavior from charge transfer control process to diffusion control process. The trace amount of Ti addition (0.05 wt.%) can refine the microstructure and improve the corrosion resistance of Sn-9Zn solder, evidenced by much lower corrosion current density ( i corr) and much higher total resistance ( R t). Excess Ti addition (over 0.1 wt.%) led to the formation of Ti-containing IMCs, which were confirmed as Sn3Ti2 and Sn5Ti6, deteriorating the corrosion resistance of Sn-9Zn- xTi solders. The main corrosion products were confirmed as Sn3O(OH)2Cl2 mixed with small amount of chlorine/oxide Sn compounds.

Microstructure and adhesion strength of Sn-9Zn-xAg lead-free solders wetted on Cu substrate

International Nuclear Information System (INIS)

Chang, T.-C.; Chou, S.-M.; Hon, M.-H.; Wang, M.-C.

2006-01-01

The microstructure and adhesion strength of the Sn-9Zn-xAg lead-free solders wetted on Cu substrates have been investigated by differential scanning calorimetry, optical microscopy, scanning electron microscopy, energy dispersive spectrometry and pull-off testing. The liquidus temperatures of the Sn-9Zn-xAg solder alloys are 222.1, 226.7, 231.4 and 232.9 deg. C for x = 2.5, 3.5, 5.0 and 7.5 wt%, respectively. A flat interface can be obtained as wetted at 350 deg. C at a rate of 11.8 mm/s. The adhesion strength of the Sn-9Zn-xAg/Cu interfaces decreases from 23.09 ± 0.31 to 12.32 ± 1.40 MPa with increasing Ag content from 2.5 to 7.5 wt% at 400 deg. C. After heat treatment at 150 deg. C, the adhesion strength of the Sn-9Zn-xAg/Cu interface decreases with increasing aging time

Microstructural discovery of Al addition on Sn–0.5Cu-based Pb-free solder design

International Nuclear Information System (INIS)

Koo, Jahyun; Lee, Changsoo; Hong, Sung Jea; Kim, Keun-Soo; Lee, Hyuck Mo

2015-01-01

It is important to develop Pb-free solder alloys suitable for automotive use instead of traditional Sn–Pb solder due to environmental regulations (e.g., Restriction of Hazardous Substances (RoHS)). Al addition has been spotlighted to enhance solder properties. In this study, we investigated the microstructural change of Sn–0.5Cu wt.% based Pb-free solder alloys with Al addition (0.01–0.05 wt.%). The small amount of Al addition caused a remarkable microstructural change. The Al was favored to form Cu–Al intermetallic compounds inside the solder matrix. We identified the Cu–Al intermetallic compound as Cu_3_3Al_1_7, which has a rhombohedral structure, using EPMA and TEM analyses. This resulted in refined Cu_6Sn_5 networks in the Sn–0.5Cu based solder alloy. In addition, we conducted thermal analysis to confirm its stability at a high temperature of approximately 230 °C, which is the necessary temperature range for automotive applications. The solidification results were substantiated thermodynamically using the Scheil solidification model. We can provide criteria for the minimum aluminum content to modify the microstructure of Pb-free solder alloys. - Graphical abstract: The minor Al additions refined eutectic Cu_6Sn_5 IMC networks on the Sn–0.5Cu based solder alloys. The microstructure was dramatically changed with the minor Al addition. - Highlights: • We observed dramatic microstructure-change with Al additions. • We defined Cu_3_3Al_1_7 IMC with Al additions using TEM analysis. • We investigated grain refinement with Al additions using EBSD. • We discussed the refinement based on Scheil solidification model.

Microstructural discovery of Al addition on Sn–0.5Cu-based Pb-free solder design

Energy Technology Data Exchange (ETDEWEB)

Koo, Jahyun; Lee, Changsoo [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Hong, Sung Jea [MK Electron Co., Ltd., Yongin Cheoin-gu 316-2 (Korea, Republic of); Kim, Keun-Soo, E-mail: keunsookim@hoseo.edu [Department of Display Engineering, Hoseo University, Asan 336-795 (Korea, Republic of); Lee, Hyuck Mo, E-mail: hmlee@kaist.ac.kr [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of)

2015-11-25

It is important to develop Pb-free solder alloys suitable for automotive use instead of traditional Sn–Pb solder due to environmental regulations (e.g., Restriction of Hazardous Substances (RoHS)). Al addition has been spotlighted to enhance solder properties. In this study, we investigated the microstructural change of Sn–0.5Cu wt.% based Pb-free solder alloys with Al addition (0.01–0.05 wt.%). The small amount of Al addition caused a remarkable microstructural change. The Al was favored to form Cu–Al intermetallic compounds inside the solder matrix. We identified the Cu–Al intermetallic compound as Cu{sub 33}Al{sub 17}, which has a rhombohedral structure, using EPMA and TEM analyses. This resulted in refined Cu{sub 6}Sn{sub 5} networks in the Sn–0.5Cu based solder alloy. In addition, we conducted thermal analysis to confirm its stability at a high temperature of approximately 230 °C, which is the necessary temperature range for automotive applications. The solidification results were substantiated thermodynamically using the Scheil solidification model. We can provide criteria for the minimum aluminum content to modify the microstructure of Pb-free solder alloys. - Graphical abstract: The minor Al additions refined eutectic Cu{sub 6}Sn{sub 5} IMC networks on the Sn–0.5Cu based solder alloys. The microstructure was dramatically changed with the minor Al addition. - Highlights: • We observed dramatic microstructure-change with Al additions. • We defined Cu{sub 33}Al{sub 17} IMC with Al additions using TEM analysis. • We investigated grain refinement with Al additions using EBSD. • We discussed the refinement based on Scheil solidification model.

Supergravity separation of Pb and Sn from waste printed circuit boards at different temperatures

Science.gov (United States)

Meng, Long; Wang, Zhe; Zhong, Yi-wei; Chen, Kui-yuan; Guo, Zhan-cheng

2018-02-01

Printed circuit boards (PCBs) contain many toxic substances as well as valuable metals, e.g., lead (Pb) and tin (Sn). In this study, a novel technology, named supergravity, was used to separate different mass ratios of Pb and Sn from Pb-Sn alloys in PCBs. In a supergravity field, the liquid metal phase can permeate from solid particles. Hence, temperatures of 200, 280, and 400°C were chosen to separate Pb and Sn from PCBs. The results depicted that gravity coefficient only affected the recovery rates of Pb and Sn, whereas it had little effect on the mass ratios of Pb and Sn in the obtained alloys. With an increase in gravity coefficient, the recovery values of Pb and Sn in each step of the separation process increased. In the single-step separation process, the mass ratios of Pb and Sn in Pb-Sn alloys were 0.55, 0.40, and 0.64 at 200, 280, and 400°C, respectively. In the two-step separation process, the mass ratios were 0.12 and 0.55 at 280 and 400°C, respectively. Further, the mass ratio was observed to be 0.76 at 400°C in the three-step separation process. This process provides an innovative approach to the recycling mechanism of Pb and Sn from PCBs.

Semiconducting ZnSnN{sub 2} thin films for Si/ZnSnN{sub 2} p-n junctions

Energy Technology Data Exchange (ETDEWEB)

Qin, Ruifeng [Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology (HEBUT), Tianjin 300401 (China); Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201 (China); Cao, Hongtao; Liang, Lingyan, E-mail: lly@nimte.ac.cn, E-mail: swz@hebut.edu.cn; Xie, Yufang; Zhuge, Fei; Zhang, Hongliang; Gao, Junhua; Javaid, Kashif [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201 (China); Liu, Caichi; Sun, Weizhong, E-mail: lly@nimte.ac.cn, E-mail: swz@hebut.edu.cn [Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology (HEBUT), Tianjin 300401 (China)

2016-04-04

ZnSnN{sub 2} is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN{sub 2} films with a low electron concentration, in order to promote the applications of ZnSnN{sub 2} as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN{sub 2} films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN{sub 2} p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 10{sup 17} to 6.78 × 10{sup 17 }cm{sup −3} and from 0.37 to 2.07 cm{sup 2} V{sup −1} s{sup −1}, corresponding to the annealing temperature from 200 to 350 °C. After annealing at 300 °C, the p-n junction exhibited the optimum rectifying characteristics, with a forward-to-reverse ratio over 10{sup 3}. The achievement of this ZnSnN{sub 2}-based p-n junction makes an opening step forward to realize the practical application of the ZnSnN{sub 2} material. In addition, the nonideal behaviors of the p-n junctions under both positive and negative voltages are discussed, in hope of suggesting some ideas to further improve the rectifying characteristics.

Reliability of Pb free solder alloys. Physical and mechanical properties; Pb free handa no shinraisei. Butsuri kikaiteki shinraisei

Energy Technology Data Exchange (ETDEWEB)

Sanji, M; Yoshino, M; Ishikawa, J; Takenaka, O [Denso Corp., Aichi (Japan)

1997-10-01

Properties of 19 different Pb free solders have been evaluated in comparison with Sn-37Pb eutectic solder. Pb free solders without Bi were on the same level as Sn-37Pb in tensile strength and elongation, and those with Bi had higher strength and lower elongation than Sn-37Pb. As the Bi content increased, strength was higher, and elongation was lower. In torsion fatigue tests, fatigue life of Pb free solders without Bi was longer than Sn-37Pb. The relationships of Coffin-Manson rule and Basquin rule with fatigue life was applicable to Pb free solder. Fatigue life of those is inferred from their tensile strength. 7 refs., 13 figs., 1 tab.

Phase Equilibria of the Ternary Sn-Pb-Co System at 250°C and Interfacial Reactions of Co with Sn-Pb Alloys

Science.gov (United States)

Wang, Chao-hong; Kuo, Chun-yi; Yang, Nian-cih

2015-11-01

The isothermal section of the ternary Sn-Pb-Co system at 250°C was experimentally determined through a series of the equilibrated Sn-Pb-Co alloys of various compositions. The equilibrium phases were identified on the basis of compositional analysis. For the Sn-Co intermetallic compounds (IMCs), CoSn3, CoSn2, CoSn and Co3Sn2, the Pb solubility was very limited. There exist five tie-triangle regions. The Co-Pb system involves one monotectic reaction, so the phase separation of liquid alloys near the Co-Pb side occurred prior to solidification. The immiscibility field was also determined. Additionally, interfacial reactions between Co and Sn-Pb alloys were conducted. The reaction phase for the Sn-48 at.%Pb and Sn-58 at.%Pb at 250°C was CoSn3 and CoSn2, respectively. Both of them were simultaneously formed in the Sn-53 at.%Pb/Co. The formed IMCs were closely associated to the phase equilibria relationship of the liquid-CoSn3-CoSn2 tie-triangle. Furthermore, with increasing temperatures, the phase formed in equilibrium with Sn-37 wt.%Pb was found to transit from CoSn3 to CoSn2 at 275°C. We propose a simple method of examining the phase transition temperature in the interfacial reactions to determine the boundaries of the liquid-CoSn3-CoSn2 tie-triangles at different temperatures.

Cu2ZnSn(S,Se)4 from CuxSnSy nanoparticle precursors on ZnO nanorod arrays

International Nuclear Information System (INIS)

Kavalakkatt, Jaison; Lin, Xianzhong; Kornhuber, Kai; Kusch, Patryk; Ennaoui, Ahmed; Reich, Stephanie; Lux-Steiner, Martha Ch.

2013-01-01

Solar cells with Cu 2 ZnSnS 4 absorber thin films have a potential for high energy conversion efficiencies with earth-abundant and non-toxic elements. In this work the formation of CZTSSe from Cu x SnS y nanoparticles (NPs) deposited on ZnO nanorod (NR) arrays as precursors for zinc is investigated. The NPs are prepared using a chemical route and are dispersed in toluene. The ZnO NRs are grown on fluorine doped SnO 2 coated glass substrates by electro deposition method. A series of samples are annealed at different temperatures between 300 °C and 550 °C in selenium containing argon atmosphere. To investigate the products of the reaction between the precursors the series is analyzed by means of X-ray diffraction (XRD) and Raman spectroscopy. The morphology is recorded by scanning electron microscopy (SEM) images of broken cross sections. The XRD measurements and the SEM images show the disappearing of ZnO NRs with increasing annealing temperature. Simultaneously the XRD and Raman measurements show the formation of CZTSSe. The formation of secondary phases and the optimum conditions for the preparation of CZTSSe is discussed. - Highlights: ► Cu x SnS y nanoparticles are deposited on ZnO nanorod arrays. ► Samples are annealed at different temperatures (300–550 °C) in Se/Ar-atmosphere. ► Raman spectroscopy, X-ray diffraction and electron microscopy are performed. ► ZnO disappears with increasing annealing temperature. ► With increasing temperature Cu x SnS y and ZnO form Cu 2 ZnSn(S,Se) 4

Stable and metastable equilibria in PbSe + SnI2=SnSe + PbI2

International Nuclear Information System (INIS)

Odin, I.N.; Grin'ko, V.V.; Kozlovskij, V.F.; Demidova, E.D.

2003-01-01

T-x-y phase diagrams of the PbSe + SnI 2 =SnSe + PbI 2 mutual system (stable states) are plotted for the first time. It is shown that melt, solid solutions on the base of components of the mutual system and phase on the base of Sn 2 SeI 4 take part in phase equilibria. Transformations in the PbSe + SnI 2 =SnSe + PbI 2 mutual system leading to crystallization of metastable polytype modifications of lead iodides and metastable ternary compound forming in PbSe-PbI 2 system are investigated for the first time [ru

In situ measurement of electromigration-induced transient stress in Pb-free Sn-Cu solder joints by synchrotron radiation based X-ray polychromatic microdiffraction

Energy Technology Data Exchange (ETDEWEB)

Chen, Kai; Tamura, Nobumichi; Kunz, Martin; Tu, King-Ning; Lai, Yi-Shao

2009-12-01

Electromigration-induced hydrostatic elastic stress in Pb-free SnCu solder joints was studied by in situ synchrotron X-ray white beam microdiffraction. The elastic stresses in two different grains with similar crystallographic orientation, one located at the anode end and the other at the cathode end, were analyzed based on the elastic anisotropy of the Beta-Sn crystal structure. The stress in the grain at the cathode end remained constant except for temperature fluctuations, while the compressive stress in the grain at the anode end was built-up as a function of time during electromigration until a steady state was reached. The measured compressive stress gradient between the cathode and the anode is much larger than what is needed to initiate Sn whisker growth. The effective charge number of Beta-Sn derived from the electromigration data is in good agreement with the calculated value.

In situ measurement of electromigration-induced transient stress in Pb-free Sn-Cu solder joints by synchrotron radiation based X-ray polychromatic microdiffraction

Energy Technology Data Exchange (ETDEWEB)

Chen, Kai; Tamura, Nobumichi; Kunz, Martin; Tu, King-Ning; Lai, Yi-Shao

2009-05-15

Electromigration-induced hydrostatic elastic stress in Pb-free SnCu solder joints was studied by in situ synchrotron X-ray white beam microdiffraction. The elastic stresses in two different grains with similar crystallographic orientation, one located at the anode end and the other at the cathode end, were analyzed based on the elastic anisotropy of the {beta}-Sn crystal structure. The stress in the grain at the cathode end remained constant except for temperature fluctuations, while the compressive stress in the grain at the anode end was built-up as a function of time during electromigration until a steady state was reached. The measured compressive stress gradient between the cathode and the anode is much larger than what is needed to initiate Sn whisker growth. The effective charge number of {beta}-Sn derived from the electromigration data is in good agreement with the calculated value.

Parameters Influencing the Growth of ZnO Nanowires as Efficient Low Temperature Flexible Perovskite-Based Solar Cells

Directory of Open Access Journals (Sweden)

Alex Dymshits

2016-01-01

Full Text Available Hybrid organic-inorganic perovskite has proved to be a superior material for photovoltaic solar cells. In this work we investigate the parameters influencing the growth of ZnO nanowires (NWs for use as an efficient low temperature photoanode in perovskite-based solar cells. The structure of the solar cell is FTO (SnO2:F-glass (or PET-ITO (In2O3·(SnO2 (ITO on, polyethylene terephthalate (PET/ZnAc seed layer/ZnO NWs/CH3NH3PbI3/Spiro-OMeTAD/Au. The influence of the growth rate and the diameter of the ZnO NWs on the photovoltaic performance were carefully studied. The ZnO NWs perovskite-based solar cell demonstrates impressive power conversion efficiency of 9.06% on a rigid substrate with current density over 21 mA/cm2. In addition, we successfully fabricated flexible perovskite solar cells while maintaining all fabrication processes at low temperature, achieving power conversion efficiency of 6.4% with excellent stability for over 75 bending cycles.

Research on Cu2ZnSnTe4 crystals and heterojunctions based on such crystals

Directory of Open Access Journals (Sweden)

Kovaliuk T. T.

2015-12-01

Full Text Available The paper reports on the results of the studies of magnetic, kinetic and optical properties of Cu2ZnSnTe4 crystals. The Cu2ZnSnTe4 crystals showed diamagnetic properties (the magnetic susceptibility almost independent of the magnetic field and temperature. The Cu2ZnSnTe4 crystals possessed p-type of conductivity and the Hall coefficient was independent on temperature. The temperature dependence of the electrical conductivity of the Cu2ZnSnTe4 crystal shows metallic character, i. e. decreases with the increase of temperature, that is caused by the lower charge carrier mobility at higher temperature. Thermoelectric power of the samples ispositive that also indicates on the prevalence of p-type conductivity. Heterojunctions n-TiN/p-Cu2ZnSnTe4, n-TiO2/p-Cu2ZnSnTe4 and n-MoO/p-Cu2ZnSnTe4 were fabricated by the reactive magnetron sputtering of TiN, TiO2 and MoOx thin films, respectively, onto the substrates made of the Cu2ZnSnTe4 crystals. The dominating current transport mechanisms in the n-TiN/p-Cu2ZnSnTe4 and n-TiO2/p-Cu2ZnSnTe4 heterojunctions were established to be the tunnel-recombination mechanism at forward bias and tunneling at reverse bias.

Lead-free soldering: Investigation of the Cu-Sn-Sb system along the Sn:Sb = 1:1 isopleth

Energy Technology Data Exchange (ETDEWEB)

Yuan, Y. [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China); Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy); Borzone, G., E-mail: borzone@chimica.unige.it [Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy); Zanicchi, G.; Delsante, S. [Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy)

2011-02-03

Research highlights: > In the electronics industry, the solder alloys commonly used for assembly belong to the Sn-Pb system. Fulfilment of the EU RoHS (reduction of hazardous substances) requires the development of new lead-free alloys for applications in electronics, with the same or possibly better characteristics than the traditional Sn-Pb alloys. > This research concerns the investigation of the constitutional properties of the Cu-Sn-Sb system which is considered as lead-free replacement for high-temperature applications. - Abstract: The Cu-Sn-Sb system has been experimentally investigated by a combination of optical microscopy, differential scanning calorimetry (DSC) and electron probe microanalysis (EPMA). DSC was used to identify a total number of five invariant ternary reactions and the Sn:Sb = 1:1 isopleth section up to 65 at.% Cu was constructed by combining the DSC data with the EPMA analyses of annealed alloys and literature information. The composition limits of the binary phases were detected.

Oxidation of Pb-Sn and Pb-Sn-In alloys

International Nuclear Information System (INIS)

Sluzewski, D.A.; Chang, Y.A.; Marcotte, V.C.

1990-01-01

Air oxidized Pb-Sn and Pb-Sn-In single phase alloys have been studied with scanning Auger microscopy. Line scans across grain boundaries combined with argon ion sputter etching revealed grain boundary oxidation. In the Pb-Sn samples, tin is preferentially oxidized with the grain boundary regions having a much higher percentage of tin oxide than the bulk surface oxide. In the Pb-Sn-In alloys, both tin and indium are preferentially oxidized with the grain boundary regions being enriched with tin and indium oxides

Reference Data for the Density, Viscosity, and Surface Tension of Liquid Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn Eutectic Alloys

Science.gov (United States)

Dobosz, Alexandra; Gancarz, Tomasz

2018-03-01

The data for the physicochemical properties viscosity, density, and surface tension obtained by different experimental techniques have been analyzed for liquid Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn eutectic alloys. All experimental data sets have been categorized and described by the year of publication, the technique used to obtain the data, the purity of the samples and their compositions, the quoted uncertainty, the number of data in the data set, the form of data, and the temperature range. The proposed standard deviations of liquid eutectic Al-Zn, Ag-Sn, Bi-Sn, Cu-Sn, and Sn-Zn alloys are 0.8%, 0.1%, 0.5%, 0.2%, and 0.1% for the density, 8.7%, 4.1%, 3.6%, 5.1%, and 4.0% for viscosity, and 1.0%, 0.5%, 0.3%, N/A, and 0.4% for surface tension, respectively, at a confidence level of 95%.

Metal-free indoline dye sensitized solar cells based on nanocrystalline Zn{sub 2}SnO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Huang, Lihua [Institute of New Energy Technology and Nano-Materials, Fuzhou University, Fuzhou, Fujian 350002 (China); Jiang, Lilong; Wei, Mingding [Institute of New Energy Technology and Nano-Materials, Fuzhou University, Fuzhou, Fujian 350002 (China); National Engineering Research Center for Chemical Fertilizer Catalyst, Fuzhou University, Fuzhou, Fujian 350002 (China)

2010-02-15

Zn{sub 2}SnO{sub 4} nanocrystals were synthesized and first used as the electrode materials for the metal-free indoline dyes sensitized solar cells (DSSCs). The highest efficiency of 3.08% was achieved for a D131 DSSC. This might be attributed to the fact that the D131 dye has a greater positive oxidation potential, which can lead to rapid dye regeneration, avoiding the geminate charge recombination between oxidized dye molecules and injected electrons in the Zn{sub 2}SnO{sub 4} film. The efficiency can be improved significantly using a mixture solution of D131 and N719 dyes for which an efficiency of 3.6% was obtained. (author)

Fatigue and thermal fatigue of Pb-Sn solder joints

International Nuclear Information System (INIS)

Frear, D.; Grivas, D.; McCormack, M.; Tribula, D.; Morris, J.W. Jr.

1987-01-01

This paper presents a fundamental investigation of the fatigue and thermal fatigue characteristics, with an emphasis on the microstructural development during fatigue, of Sn-Pb solder joints. Fatigue tests were performed in simple shear on both 60Sn-40Pb and 5Sn-95Pb solder joints. Isothermal fatigue tests show increasing fatigue life of 60Sn-40Pb solder joints with decreasing strain and temperature. In contrast, such behavior was not observed in the isothermal fatigue of 5Sn-95Pb solder joints. Thermal fatigue results on 60Sn-40Pb solder cycled between -55 0 C and 125 0 C show that a coarsened region develops in the center of the joint. Both Pb-rich and Sn-rich phases coarsen, and cracks form within these coarsened regions. The failure mode 60Sn-40Pb solder joints in thermal and isothermal fatigue is similar: cracks form intergranularly through the Sn-rich phase or along Sn/Pb interphase boundaries. Extensive cracking is found throughout the 5Sn-95Pb joint for both thermal and isothermal fatigue. In thermal fatigue the 5Sn-95Pb solder joints failed after fewer cycles than 60Sn-40Pb

Spray-coated ligand-free Cu2ZnSnS4 nanoparticle thin films

DEFF Research Database (Denmark)

Engberg, Sara Lena Josefin; Murthy, Swathi; Kofod, Guggi

We have fabricated Cu2ZnSnS4 (CZTS) thin films from spray-coating ligand-free nanoparticle inks. The as-synthesized CZTS nanoparticles were inherently ligand-free [1], which allows the use of polar solvents, such as water and ethanol. Another advantage of these particles is that user- and environ......We have fabricated Cu2ZnSnS4 (CZTS) thin films from spray-coating ligand-free nanoparticle inks. The as-synthesized CZTS nanoparticles were inherently ligand-free [1], which allows the use of polar solvents, such as water and ethanol. Another advantage of these particles is that user......- and environmentally-friendly alkali metal chloride salts can be directly dissolved in controllable amounts. The homogeneous distribution of alkali metals in the ink allows uniform grain growth within the deposited absorber layer as a result of liquid phase assisted sintering. We find that particularly beneficial...... as an unquantifiable amount of ZnS. A Sono-tek spray-coating system is used which utilizes ultrasonic atomization. We investigate the effect of different binders, ink concentration, and spray-coating conditions, i.e. spray power, flow rate from syringe pump, distance between spray nozzle and the substrate, and time...

Effect of cooling rate during solidification of Sn-9Zn lead-free solder alloy on its microstructure, tensile strength and ductile-brittle transition temperature

Energy Technology Data Exchange (ETDEWEB)

Prabhu, K.N., E-mail: prabhukn_2002@yahoo.co.in [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal, Mangalore 575 025 (India); Deshapande, Parashuram; Satyanarayan [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal, Mangalore 575 025 (India)

2012-01-30

Highlights: Black-Right-Pointing-Pointer Effect of cooling rate on tensile and impact properties of Sn-9Zn alloy was assessed. Black-Right-Pointing-Pointer Both DBTT and UTS of the solder alloy increased with increase in cooling rate. Black-Right-Pointing-Pointer An optimum cooling rate during solidification would minimize DBTT and maximize UTS. - Abstract: Solidification rate is an important variable during processing of materials, including soldering, involving solidification. The rate of solidification controls the metallurgical microstructure at the solder joint and hence the mechanical properties. A high tensile strength and a lower ductile-brittle transition temperature are necessary for reliability of solder joints in electronic circuits. Hence in the present work, the effect of cooling rate during solidification on microstructure, impact and tensile properties of Sn-9Zn lead-free solder alloy was investigated. Four different cooling media (copper and stainless steel moulds, air and furnace cooling) were used for solidification to achieve different cooling rates. Solder alloy solidified in copper mould exhibited higher cooling rate as compared to other cooling media. The microstructure is refined as the cooling rate was increased from 0.03 to 25 Degree-Sign C/s. With increase in cooling rate it was observed that the size of Zn flakes became finer and distributed uniformly throughout the matrix. Ductile-to-brittle transition temperature (DBTT) of the solder alloy increased with increase in cooling rate. Fractured surfaces of impact test specimens showed cleavage like appearance and river like pattern at very low temperatures and dimple like appearance at higher temperatures. The tensile strength of the solder alloy solidified in Cu and stainless moulds were higher as compared to air and furnace cooled samples. It is therefore suggested that the cooling rate during solidification of the solder alloy should be optimum to maximize the strength and minimize the

Sensitivity of PbSnTe:In films to the radiation of free electron laser

Science.gov (United States)

Akimov, A. N.; Epov, V. S.; Klimov, A. E.; Kubarev, V. V.; Paschin, N. S.

2018-01-01

The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb1-x Sn x Te:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser (wavelength range of about 70-240 μm) under different measurement conditions, is presented in the paper. Both the positive and negative photoconductivities were detected. In a magnetic field, the resonance-type photoconductivity was observed. The results are discussed within the framework of the model taking into account the existence of different capture levels in PbSnTe.

Creep Behavior of a Sn-Ag-Bi Pb-Free Solder

Science.gov (United States)

Vianco, Paul; Rejent, Jerome; Grazier, Mark; Kilgo, Alice

2012-01-01

Compression creep tests were performed on the ternary 91.84Sn-3.33Ag-4.83Bi (wt.%, abbreviated Sn-Ag-Bi) Pb-free alloy. The test temperatures were: −25 °C, 25 °C, 75 °C, 125 °C, and 160 °C (± 0.5 °C). Four loads were used at the two lowest temperatures and five at the higher temperatures. The specimens were tested in the as-fabricated condition or after having been subjected to one of two air aging conditions: 24 hours at either 125 °C or 150 °C. The strain-time curves exhibited frequent occurrences of negative creep and small-scale fluctuations, particularly at the slower strain rates, that were indicative of dynamic recrystallization (DRX) activity. The source of tertiary creep behavior at faster strain rates was likely to also be DRX rather than a damage accumulation mechanism. Overall, the strain-time curves did not display a consistent trend that could be directly attributed to the aging condition. The sinh law equation satisfactorily represented the minimum strain rate as a function of stress and temperature so as to investigate the deformation rate kinetics: dε/dtmin = Asinhn (ασ) exp (−ΔH/RT). The values of α, n, and ΔH were in the following ranges (±95% confidence interval): α, 0.010–0.015 (±0.005 1/MPa); n, 2.2–3.1 (±0.5); and ΔH, 54–66 (±8 kJ/mol). The rate kinetics analysis indicated that short-circuit diffusion was a contributing mechanism to dislocation motion during creep. The rate kinetics analysis also determined that a minimum creep rate trend could not be developed between the as-fabricated versus aged conditions. This study showed that the elevated temperature aging treatments introduced multiple changes to the Sn-Ag-Bi microstructure that did not result in a simple loss (“softening”) of its mechanical strength.

Cu{sub 2}ZnSn(S,Se){sub 4} from Cu{sub x}SnS{sub y} nanoparticle precursors on ZnO nanorod arrays

Energy Technology Data Exchange (ETDEWEB)

Kavalakkatt, Jaison, E-mail: jai.k@web.de [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universitaet Berlin, Berlin (Germany); Lin, Xianzhong; Kornhuber, Kai [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Kusch, Patryk [Freie Universitaet Berlin, Berlin (Germany); Ennaoui, Ahmed [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Reich, Stephanie [Freie Universitaet Berlin, Berlin (Germany); Lux-Steiner, Martha Ch. [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universitaet Berlin, Berlin (Germany)

2013-05-01

Solar cells with Cu{sub 2}ZnSnS{sub 4} absorber thin films have a potential for high energy conversion efficiencies with earth-abundant and non-toxic elements. In this work the formation of CZTSSe from Cu{sub x}SnS{sub y} nanoparticles (NPs) deposited on ZnO nanorod (NR) arrays as precursors for zinc is investigated. The NPs are prepared using a chemical route and are dispersed in toluene. The ZnO NRs are grown on fluorine doped SnO{sub 2} coated glass substrates by electro deposition method. A series of samples are annealed at different temperatures between 300 °C and 550 °C in selenium containing argon atmosphere. To investigate the products of the reaction between the precursors the series is analyzed by means of X-ray diffraction (XRD) and Raman spectroscopy. The morphology is recorded by scanning electron microscopy (SEM) images of broken cross sections. The XRD measurements and the SEM images show the disappearing of ZnO NRs with increasing annealing temperature. Simultaneously the XRD and Raman measurements show the formation of CZTSSe. The formation of secondary phases and the optimum conditions for the preparation of CZTSSe is discussed. - Highlights: ► Cu{sub x}SnS{sub y} nanoparticles are deposited on ZnO nanorod arrays. ► Samples are annealed at different temperatures (300–550 °C) in Se/Ar-atmosphere. ► Raman spectroscopy, X-ray diffraction and electron microscopy are performed. ► ZnO disappears with increasing annealing temperature. ► With increasing temperature Cu{sub x}SnS{sub y} and ZnO form Cu{sub 2}ZnSn(S,Se){sub 4}.

Enhancing Performance of SnO2-Based Dye-Sensitized Solar Cells Using ZnO Passivation Layer

Directory of Open Access Journals (Sweden)

W. M. N. M. B. Wanninayake

2016-01-01

Full Text Available Although liquid electrolyte based dye-sensitized solar cells (DSCs have shown higher photovoltaic performance in their class, they still suffer from some practical limitations such as solvent evaporation, leakage, and sealing imperfections. These problems can be circumvented to a certain extent by replacing the liquid electrolytes with quasi-solid-state electrolytes. Even though SnO2 shows high election mobility when compared to the semiconductor material commonly used in DSCs, the cell performance of SnO2-based DSCs is considerably low due to high electron recombination. This recombination effect can be reduced through the use of ultrathin coating layer of ZnO on SnO2 nanoparticles surface. ZnO-based DSCs also showed lower performance due to its amphoteric nature which help dissolve in slightly acidic dye solution. In this study, the effect of the composite SnO2/ZnO system was investigated. SnO2/ZnO composite DSCs showed 100% and 38% increase of efficiency compared to the pure SnO2-based and ZnO-based devices, respectively, with the gel electrolyte consisting of LiI salt.

Morphology and optical properties of ternary Zn-Sn-O semiconductor nanowires with catalyst-free growth

Energy Technology Data Exchange (ETDEWEB)

Liang, Yuan-Chang, E-mail: yuanvictory@gmail.com [Institute of Materials Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan (China); Huang, Chiem-Lum; Hu, Chia-Yen; Deng, Xian-Shi; Zhong, Hua [Institute of Materials Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan (China)

2012-10-05

Highlights: Black-Right-Pointing-Pointer Zn{sub 2}SnO{sub 4} nanowires with various morphologies were successfully synthesized by thermal evaporation. Black-Right-Pointing-Pointer The as-synthesized Zn{sub 2}SnO{sub 4} nanowires have a face-centered cubic crystal structure. Black-Right-Pointing-Pointer Thermal annealing of Zn{sub 2}SnO{sub 4} nanowires changes the properties of the visible emission band. - Abstract: This study reports the synthesis of Zn{sub 2}SnO{sub 4} (ZTO) nanowires with various morphologies using thermal evaporation without a metal catalyst. X-ray diffraction patterns show that the structure of the as-synthesized ZTO nanowires is a face-centered cubic spinel phase. Scanning electron microscopy images exhibit that the as-synthesized nanowires have various morphologies, and homogeneously cover the area of interest. High-resolution transmittance electron microscopy reveals that these ZTO nanowires have single crystalline microstructures with four morphologies. The results of low-temperature cathodoluminescence (CL) measurements show the crystal defects of oxygen vacancies and interstitials may contribute to blue-green and yellow-orange emissions, respectively, for the as-synthesized single nanowire. This study also discusses the effects of thermal annealing under oxygen-rich and reducing ambient on the CL properties of the single ZTO nanowire.

Extremely High Phosphate Sorption Capacity in Cu-Pb-Zn Mine Tailings.

Science.gov (United States)

Huang, Longbin; Li, Xiaofang; Nguyen, Tuan A H

2015-01-01

Elevated inorganic phosphate (Pi) concentrations in pore water of amended tailings under direct revegetation may cause toxicity in some native woody species but not native forbs or herb species, all of which are key constituents in target native plant communities for phytostabilizing base metal mine tailings. As a result, Pi sorption capacity has been quantified by a conventional batch procedure in three types of base metal mine tailings sampled from two copper (Cu)-lead (Pb)-zinc (Zn) mines, as the basis for Pi-fertiliser addition. It was found that the Pi-sorption capacity in the tailings and local soil was extremely high, far higher than highly weathered agricultural soils in literature, but similar to those of volcanic ash soils. The Langmuir P-sorption maximum was up to 7.72, 4.12, 4.02 and 3.62 mg P g-1 tailings, in the fresh tailings of mixed Cu-Pb-Zn streams (MIMTD7), the weathered tailings of mixed Cu-Pb-Zn streams (MIMTD5), EHM-TD (fresh Cu-stream, high magnetite content) and local soil (weathered shale and schist), respectively. Physicochemical factors highly correlated with the high Pi-sorption in the tailings were fine particle distribution, oxalate and dithionite-citrate-bicarbonate extractable Fe (FeO and Fed), oxalate-extractable Al and Mn, and the levels of soluble Cd and Zn, and total S and Fe. Large amounts of amorphous Fe oxides and oxyhydroxides may have been formed from the oxidation of pyritic materials and redox cycles of Fe-minerals (such as pyrite (FeS2), ankerite (Ca(Fe Mg)(CO3)2 and siderite (FeCO3), as indicated by the extractable FeO values. The likely formation of sparingly soluble Zn-phosphate in the Pb-Zn tailings containing high levels of Zn (from sphalerite ((Zn,Fe)S, ZnS, (Zn,Cd)S)) may substantially lower soluble Zn levels in the tailings through high rates of Pi-fertiliser addition. As a result, the possibility of P-toxicity in native plant species caused by the addition of soluble phosphate fertilizers would be minimal.

Cadmium free high efficiency Cu2ZnSn(S,Se4 solar cell with Zn1−xSnxOy buffer layer

Directory of Open Access Journals (Sweden)

Md. Asaduzzaman

2017-06-01

Full Text Available We have investigated the simulation approach of a one-dimensional online simulator named A Device Emulation Program and Tool (ADEPT2.1 and the device performances of a thin film solar cell based on Cu2ZnSn(S,Se4 (CZTSSe absorber have been measured. Initiating with a thin film photovoltaic device structure consisting of n-ZnO:Al/i-ZnO/Zn1-xSnxOy (ZTO/CZTSSe/Mo/SLG stack, a graded space charge region (SCR and an inverted surface layer (ISL were inserted between the buffer and the absorber. The cadmium (Cd free ZTO buffer, a competitive substitute to the CdS buffer, significantly contributes to improve the open-circuit voltage, Voc without deteriorating the short-circuit current density, Jsc. The optimized solar cell performance parameters including Voc, Jsc, fill factor (FF, and efficiency (η were calculated from the current density-voltage curve, also known as J–V characteristic curve. The FF was determined as 73.17%, which in turns, yields a higher energy conversion efficiency of 14.09%.

Thermoelectric properties of chalcogenide based Cu2+xZnSn1−xSe4

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Ch. Raju

2013-03-01

Full Text Available Quaternary chalcogenide compounds Cu2+xZnSn1−xSe4 (0 ≤ x ≤ 0.15 were prepared by solid state synthesis. Rietveld powder X-ray diffraction (XRD refinements combined with Electron Probe Micro Analyses (EPMA, WDS-Wavelength Dispersive Spectroscopy and Raman spectra of all samples confirmed the stannite structure (Cu2FeSnS4-type as the main phase. In addition to the main phase, small amounts of secondary phases like ZnSe, CuSe and SnSe were observed. Transport properties of all samples were measured as a function of temperature in the range from 300 K to 720 K. The electrical resistivity of all samples decreases with an increase in Cu content except for Cu2.1ZnSn0.9Se4, most likely due to a higher content of the ZnSe. All samples showed positive Seebeck coefficients indicating that holes are the majority charge carriers. The thermal conductivity of doped samples was high compared to Cu2ZnSnSe4 and this may be due to the larger electronic contribution and the presence of the ZnSe phase in the doped samples. The maximum zT = 0.3 at 720 K occurs for Cu2.05ZnSn0.95Se4 for which a high-pressure torsion treatment resulted in an enhancement of zT by 30% at 625 K.

Electrodeposition of nanostructured Sn-Zn coatings

Science.gov (United States)

Salhi, Y.; Cherrouf, S.; Cherkaoui, M.; Abdelouahdi, K.

2016-03-01

The electrodeposition of Sn-Zn coating at ambient temperature was investigated. The bath consists of metal salts SnCl2·2H2O and ZnSO4·7H2O and sodium citrate (NaC6H5Na3O7·2H2O) as complexing agent. To prevent precipitation, the pH is fixed at 5. Reducing tin and zinc through Sncit2- and ZnHcit- complex respectively is confirmed by the presence of two cathodic peaks on the voltammogram. The kinetic of tin (II) reduction process is limited by the SnCit2- dissociation. The SEM and TEM observations have showed that the coating consists of a uniform Sn-Zn layer composed of fine grains on which tin aggregates grow up. XRD revealed peaks corresponding to the hexagonal Zn phase and the tetragonal β-Sn phase.

Effect of nano Ni additions on the structure and properties of Sn-9Zn and Sn-Zn-3Bi solders in Au/Ni/Cu ball grid array packages

Energy Technology Data Exchange (ETDEWEB)

Gain, Asit Kumar [Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong); Chan, Y.C. [Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong)], E-mail: eeycchan@cityu.edu.hk; Yung, Winco K.C. [Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon (Hong Kong)

2009-05-25

The effect of nano Ni additions in Sn-9Zn and Sn-8Zn-3Bi solders on their interfacial microstructures and shear loads with Au/Ni/Cu pad metallization in ball grid array (BGA) applications were investigated. After the addition of nano Ni powder in Sn-based lead-free solders, there were no significant changes in the interfacial microstructure. But, in the solder region a very fine Zn-rich phase was observed. Also on the fracture surfaces a fine Zn-Ni compound was found. After the addition of nano Ni powder in Sn-based solders, the shear loads were increased due to a refinement of the microstructure and in addition, ductile fracture surfaces were clearly observed. The shear loads of the plain Sn-9Zn and Sn-8Zn-3Bi solders after one reflow cycle were about 1798 g and 2059 g, respectively. After the addition of nano Ni powder, their loads were about 2172 g and 2212 g, respectively, after one reflow cycle and their shear loads after eight reflow cycles were about 2099 g and 2081 g, respectively.

Effect of nano Ni additions on the structure and properties of Sn-9Zn and Sn-Zn-3Bi solders in Au/Ni/Cu ball grid array packages

International Nuclear Information System (INIS)

Gain, Asit Kumar; Chan, Y.C.; Yung, Winco K.C.

2009-01-01

The effect of nano Ni additions in Sn-9Zn and Sn-8Zn-3Bi solders on their interfacial microstructures and shear loads with Au/Ni/Cu pad metallization in ball grid array (BGA) applications were investigated. After the addition of nano Ni powder in Sn-based lead-free solders, there were no significant changes in the interfacial microstructure. But, in the solder region a very fine Zn-rich phase was observed. Also on the fracture surfaces a fine Zn-Ni compound was found. After the addition of nano Ni powder in Sn-based solders, the shear loads were increased due to a refinement of the microstructure and in addition, ductile fracture surfaces were clearly observed. The shear loads of the plain Sn-9Zn and Sn-8Zn-3Bi solders after one reflow cycle were about 1798 g and 2059 g, respectively. After the addition of nano Ni powder, their loads were about 2172 g and 2212 g, respectively, after one reflow cycle and their shear loads after eight reflow cycles were about 2099 g and 2081 g, respectively.

Anomalous temperature behavior of Sn impurities

International Nuclear Information System (INIS)

Haskel, D.; Shechter, H.; Stern, E.A.; Newville, M.; Yacoby, Y.

1993-01-01

Sn impurities in Pb and Ag hosts have been investigated by Moessbauer effect and in Pb by x-ray-absorption fine-structure (XAFS) studies. The Sn atoms are dissolved up to at least 2 at. % in Pb and up to at least 8 at. % in Ag for the temperature ranges investigated. The concentration limit for Sn-Sn interactions is 1 at. % for Pb and 2 at. % for Ag as determined experimentally by lowering the Sn concentration until no appreciable change occurs in the Moessbauer effect. XAFS measurements verify that the Sn impurities in Pb are dissolved and predominantly at substitutional sites. For both hosts the temperature dependence of the spectral intensities of isolated Sn impurities below a temperature T 0 is as expected for vibrating about a lattice site. Above T 0 the Moessbauer spectral intensity exhibits a greatly increased rate of drop-off with temperature without appreciable broadening. This drop-off is too steep to be explained by ordinary anharmonic effects and can be explained by a liquidlike rapid hopping of the Sn, localized about a lattice site. Higher-entropy-density regions of radii somewhat more than an atomic spacing surround such impurities, and can act as nucleation sites for three-dimensional melting

Calorimetric investigation on the Pb-Sm and Sn-Sm alloys

International Nuclear Information System (INIS)

Berrada, A.-E.-A.; Claire, Y.; Chafik el Idrissi, M.; Castanet, R.

1997-01-01

The integral enthalpy of formation of the Sm-Pb and Sm-Sn melts at 1203 K, h f , was determined by direct reaction calorimetry (drop method) in the Pb and Sn rich sides with the help of a high-temperature Tian-Calvet calorimeter. The results can be fitted respectively with reference to the mole fraction of samarium, x, as follows: f /kJmol -1 =x(1-x)(-109.8 -372.0.7x) with 0 Sm f /kJmol -1 =x(1- x)(-277.0+105.4x) with 0 Sm -1 respectively. Such negative values suggest the existence of a strong short-range order in the liquid state. The stoichiometry and the thermal stability of these associations needs additional thermodynamic determinations concerning mainly the free enthalpy of formation. It will be determined by Knudsen-effusion combined with mass spetrometry in a further work. (orig.)

ZnS-Passivated CdSe/CdS Co-sensitized Mesoporous Zn2SnO4 Based Solar Cells

International Nuclear Information System (INIS)

Kim, Kyungho; Park, Ji Eun; Park, Eun Su; Park, Yun Chang; Kim, Joosun; Im, Chan; Lee, Man-Jong

2014-01-01

Graphical abstract: - Highlights: • Mesoporous Zn 2 SnO 4 sensitized by CdSe/CdS QDs were synthesized via a two-step sequential process. • Assembled QDs were characterized by HRTEM and STEM mapping. • Efficiency increase in CdSe/CdS co-sensitized Zn 2 SnO 4 DSSCs is discussed. • The role of ZnS passivation layer is discussed by impedance spectroscopy. - Abstract: CdS and CdSe/CdS quantum dot (QD) sensitizers were assembled onto mesoporous ternary Zn 2 SnO 4 photoanodes using a two-step sequential process of successive ionic layer absorption and reaction (SILAR) and chemical bath deposition (CBD) for QD-cosensitized solar cell applications. The assembled CdS and CdSe QDs were observed using high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), high-resolution TEM (HRTEM), and STEM/energy-dispersive X-ray spectroscopy (EDS) elemental mapping. CdSe/CdS cosensitized Zn 2 SnO 4 -based cells showed a higher absorption onset position, a stepwise band-edge level alignment, and, thereby, an improved power conversion efficiency (PCE) of 1.628% under one-sun conditions, which is the best result obtained using mesoporous Zn 2 SnO 4 reported to date. In addition, the effect of a ZnS passivation layer on the photovoltaic performance and aging behavior has been investigated. Electrochemical impedance spectroscopy (EIS) showed that the main role of the ZnS layer is to enhance the aging behavior of the CdSe/CdS/Zn 2 SnO 4 cells by improving the electron lifetime and charge recombination

Variations of color with alloying elements in Pd-free Au-Pt-based high noble dental alloys

International Nuclear Information System (INIS)

Shiraishi, Takanobu; Takuma, Yasuko; Miura, Eri; Fujita, Takeshi; Hisatsune, Kunihiro

2007-01-01

The effects of alloying addition of a small amount of base metals (In, Sn, Fe, Zn) on color variations in Pd-free Au-Pt-based high noble dental alloys were investigated in terms of rectilinear and polar color coordinates. The ternary Au-Pt-X (X = In, Sn, Fe, Zn) and quaternary Au-Pt-In-Y (Y = Sn, Fe, Zn) alloys were prepared from high purity component metals. The amount of alloying base metals, X and Y, were restricted up to 2 at.%. The alloying addition of a small amount of Fe, In, Sn, to a binary Au-10 at.% Pt alloy (referred to as AP10) effectively increased chroma, C *. On the other hand, the addition of Zn to the parent alloy AP10 did not change color coordinates greatly. The increase in chroma in the present Au-Pt-based high noble alloys was attributed to the increase in the slope of spectral reflectance curve at its absorption edge near 515 nm. It was found that the addition of a small amount of Fe to the parent alloy AP10 markedly increased lightness, L *, and the addition of Sn gave a very light tint of red to the parent alloy. Although red-green chromaticity index a * contributed to chroma to some extent, contribution of yellow-blue chromaticity index b * was much greater in determining chroma in this Pd-free Au-Pt-based multi-component alloys. The present results are expected to be valuable in case color is to be taken into account in designing Pd-free Au-Pt-based high noble dental alloys

Variations of color with alloying elements in Pd-free Au-Pt-based high noble dental alloys

Energy Technology Data Exchange (ETDEWEB)

Shiraishi, Takanobu [Department of Dental and Biomedical Materials Science, Unit of Basic Medical Sciences, Graduate School of Biomedical Sciences, Nagasaki University, 1-7-1 Sakamoto, Nagasaki 852-8588 (Japan)]. E-mail: siraisi@nagasaki-u.ac.jp; Takuma, Yasuko [Department of Dental and Biomedical Materials Science, Unit of Basic Medical Sciences, Graduate School of Biomedical Sciences, Nagasaki University, 1-7-1 Sakamoto, Nagasaki 852-8588 (Japan); Miura, Eri [Department of Dental and Biomedical Materials Science, Unit of Basic Medical Sciences, Graduate School of Biomedical Sciences, Nagasaki University, 1-7-1 Sakamoto, Nagasaki 852-8588 (Japan); Fujita, Takeshi [Department of Dental and Biomedical Materials Science, Unit of Basic Medical Sciences, Graduate School of Biomedical Sciences, Nagasaki University, 1-7-1 Sakamoto, Nagasaki 852-8588 (Japan); Hisatsune, Kunihiro [Department of Dental and Biomedical Materials Science, Unit of Basic Medical Sciences, Graduate School of Biomedical Sciences, Nagasaki University, 1-7-1 Sakamoto, Nagasaki 852-8588 (Japan)

2007-06-15

The effects of alloying addition of a small amount of base metals (In, Sn, Fe, Zn) on color variations in Pd-free Au-Pt-based high noble dental alloys were investigated in terms of rectilinear and polar color coordinates. The ternary Au-Pt-X (X = In, Sn, Fe, Zn) and quaternary Au-Pt-In-Y (Y = Sn, Fe, Zn) alloys were prepared from high purity component metals. The amount of alloying base metals, X and Y, were restricted up to 2 at.%. The alloying addition of a small amount of Fe, In, Sn, to a binary Au-10 at.% Pt alloy (referred to as AP10) effectively increased chroma, C *. On the other hand, the addition of Zn to the parent alloy AP10 did not change color coordinates greatly. The increase in chroma in the present Au-Pt-based high noble alloys was attributed to the increase in the slope of spectral reflectance curve at its absorption edge near 515 nm. It was found that the addition of a small amount of Fe to the parent alloy AP10 markedly increased lightness, L *, and the addition of Sn gave a very light tint of red to the parent alloy. Although red-green chromaticity index a * contributed to chroma to some extent, contribution of yellow-blue chromaticity index b * was much greater in determining chroma in this Pd-free Au-Pt-based multi-component alloys. The present results are expected to be valuable in case color is to be taken into account in designing Pd-free Au-Pt-based high noble dental alloys.

Whisker and Hillock formation on Sn, Sn-Cu and Sn-Pb electrodeposits

International Nuclear Information System (INIS)

Boettinger, W.J.; Johnson, C.E.; Bendersky, L.A.; Moon, K.-W.; Williams, M.E.; Stafford, G.R.

2005-01-01

High purity bright Sn, Sn-Cu and Sn-Pb layers, 3, 7 and 16 μm thick were electrodeposited on phosphor bronze cantilever beams in a rotating disk apparatus. Beam deflection measurements within 15 min of plating proved that all electrodeposits had in-plane compressive stress. In several days, the surfaces of the Sn-Cu deposits, which have the highest compressive stress, develop 50 μm contorted hillocks and 200 μm whiskers, pure Sn deposits develop 20 μm compact conical hillocks, and Sn-Pb deposits, which have the lowest compressive stress, remain unchanged. The differences between the initial compressive stresses for each alloy and pure Sn is due to the rapid precipitation of Cu 6 Sn 5 or Pb particles, respectively, within supersaturated Sn grains produced by electrodeposition. Over longer time, analysis of beam deflection measurements indicates that the compressive stress is augmented by the formation of Cu 6 Sn 5 on the bronze/Sn interface, while creep of the electrodeposit tends to decrease the compressive stress. Uniform creep occurs for Sn-Pb because it has an equi-axed grain structure. Localized creep in the form of hillocks and whiskers occurs for Sn and Sn-Cu because both have columnar structures. Compact hillocks form for the Sn deposits because the columnar grain boundaries are mobile. Contorted hillocks and whiskers form for the Sn-Cu deposits because the columnar grain boundary motion is impeded

Extremely High Phosphate Sorption Capacity in Cu-Pb-Zn Mine Tailings.

Directory of Open Access Journals (Sweden)

Longbin Huang

Full Text Available Elevated inorganic phosphate (Pi concentrations in pore water of amended tailings under direct revegetation may cause toxicity in some native woody species but not native forbs or herb species, all of which are key constituents in target native plant communities for phytostabilizing base metal mine tailings. As a result, Pi sorption capacity has been quantified by a conventional batch procedure in three types of base metal mine tailings sampled from two copper (Cu-lead (Pb-zinc (Zn mines, as the basis for Pi-fertiliser addition. It was found that the Pi-sorption capacity in the tailings and local soil was extremely high, far higher than highly weathered agricultural soils in literature, but similar to those of volcanic ash soils. The Langmuir P-sorption maximum was up to 7.72, 4.12, 4.02 and 3.62 mg P g-1 tailings, in the fresh tailings of mixed Cu-Pb-Zn streams (MIMTD7, the weathered tailings of mixed Cu-Pb-Zn streams (MIMTD5, EHM-TD (fresh Cu-stream, high magnetite content and local soil (weathered shale and schist, respectively. Physicochemical factors highly correlated with the high Pi-sorption in the tailings were fine particle distribution, oxalate and dithionite-citrate-bicarbonate extractable Fe (FeO and Fed, oxalate-extractable Al and Mn, and the levels of soluble Cd and Zn, and total S and Fe. Large amounts of amorphous Fe oxides and oxyhydroxides may have been formed from the oxidation of pyritic materials and redox cycles of Fe-minerals (such as pyrite (FeS2, ankerite (Ca(Fe Mg(CO32 and siderite (FeCO3, as indicated by the extractable FeO values. The likely formation of sparingly soluble Zn-phosphate in the Pb-Zn tailings containing high levels of Zn (from sphalerite ((Zn,FeS, ZnS, (Zn,CdS may substantially lower soluble Zn levels in the tailings through high rates of Pi-fertiliser addition. As a result, the possibility of P-toxicity in native plant species caused by the addition of soluble phosphate fertilizers would be minimal.

Strong anharmonicity in the phonon spectra of PbTe and SnTe from first principles

Science.gov (United States)

Ribeiro, Guilherme A. S.; Paulatto, Lorenzo; Bianco, Raffaello; Errea, Ion; Mauri, Francesco; Calandra, Matteo

2018-01-01

At room temperature, PbTe and SnTe are efficient thermoelectrics with a cubic structure. At low temperature, SnTe undergoes a ferroelectric transition with a critical temperature strongly dependent on the hole concentration, while PbTe is an incipient ferroelectric. By using the stochastic self-consistent harmonic approximation, we investigate the anharmonic phonon spectra and the occurrence of a ferroelectric transition in both systems. We find that vibrational spectra strongly depend on the approximation used for the exchange-correlation kernel in density-functional theory. If gradient corrections and the theoretical volume are employed, then the calculation of the phonon frequencies as obtained from the diagonalization of the free-energy Hessian leads to phonon spectra in good agreement with experimental data for both systems. In PbTe we evaluate the linear thermal expansion coefficient γ =2.3 ×10-5K-1 , finding it to be in good agreement with experimental value of γ =2.04 ×10-5K-1 . Furthermore, we study the phonon spectrum and we do reproduce the transverse optical mode phonon satellite detected in inelastic neutron scattering and the crossing between the transverse optical and the longitudinal acoustic modes along the Γ X direction. The phonon satellite becomes broader at high temperatures but its energy is essentially temperature independent, in agreement with experiments. We decompose the self-consistent harmonic free energy in second-, third-, and fourth-order anharmonic terms. We find that the third- and fourth-order terms are small. However, treating the third-order term perturbatively on top of the second-order self-consistent harmonic free energy overestimates the energy of the satellite associated with the transverse optical mode. On the contrary, a perturbative treatment on top of the harmonic Hamiltonian breaks down and leads to imaginary phonon frequencies already at 300 K. In the case of SnTe, we describe the occurrence of a ferroelectric

ZnO/SnO{sub 2} nanoflower based ZnO template synthesized by thermal chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Sin, N. D. Md., E-mail: diyana0366@johor.uitm.edu.my; Amalina, M. N., E-mail: amalina0942@johor.uitm.edu.my [NANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Fakulti Kejuruteraan Elektrik, Universiti Teknologi MARA Cawangan Johor, Kampus Pasir Gudang, 81750 Masai, Johor (Malaysia); Ismail, Ahmad Syakirin, E-mail: kyrin-samaxi@yahoo.com; Shafura, A. K., E-mail: shafura@ymail.com; Ahmad, Samsiah, E-mail: samsiah.ahmad@johor.uitm.edu.my; Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my [NANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Rusop, M., E-mail: rusop@salam.uitm.edu.my [NANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia)

2016-07-06

The ZnO/SnO{sub 2} nanoflower like structures was grown on a glass substrate deposited with seed layer using thermal chemical vapor deposition (CVD) with combining two source materials. The ZnO/SnO{sub 2} nanoflower like structures had diameter in the range 70 to 100 nm. The atomic percentage of ZnO nanoparticle , SnO{sub 2} nanorods and ZnO/SnO{sub 2} nanoflower was taken using EDS. Based on the FESEM observations, the growth mechanism is applied to describe the growth for the synthesized nanostructures.

Mechanical properties of Bi-In-Zn/ Cu solder joint system

International Nuclear Information System (INIS)

Ervina Efzan Mohd Noor; Mohammed Noori Ridha; Ahmad Badri Ismail; Nurulakmal Mohd Sharif; Kuan Yew Cheong; Tadashi Ariga; Zuhailawati Hussain

2009-01-01

Full text: In recent years, the pollution of environment from lead (Pb) and Pb-containing compounds in microelectronic devices attracts more and more attentions in academia and industry; the lead-free solder alloys begin to replace the lead-based solders in packaging process of some devices and components. In this works, microstructure and mechanical properties of different reflow temperature (80, 100, 120 and 140 degree Celsius) for solder joints on shear strength of Bi-In-Zn lead free solder with low melting temperature of 60 degree Celsius on Cu solder joint has been investigated. This paper will compared the mechanical properties of the Bi-In-Zn lead-free solder alloys with current lead-free solder, Sn-Ag-Cu solder alloy. The fracture surface analyses have been observed by Optical Microscope and were investigated by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray (EDX) and proved it by X-ray diffraction (XRD). (author)

High-Temperature Lead-Free Solder Alternatives: Possibilities and Properties

DEFF Research Database (Denmark)

High-temperature solders have been widely used as joining materials to provide stable interconnections that resist a severe thermal environment and also to facilitate the drive for miniaturization. High-lead containing solders have been commonly used as high-temperature solders. The development...... of high-temperature lead-free solders has become an important issue for both the electronics and automobile industries because of the health and environmental concerns associated with lead usage. Unfortunately, limited choices are available as high-temperature lead-free solders. This work outlines...... the criteria for the evaluation of a new high-temperature lead-free solder material. A list of potential ternary high-temperature lead-free solder alternatives based on the Au-Sn and Au-Ge systems is proposed. Furthermore, a comprehensive comparison of the high-temperature stability of microstructures...

Assessing the toxicity of Pb- and Sn-based perovskite solar cells in model organism Danio rerio

Science.gov (United States)

Babayigit, Aslihan; Duy Thanh, Dinh; Ethirajan, Anitha; Manca, Jean; Muller, Marc; Boyen, Hans-Gerd; Conings, Bert

2016-01-01

Intensive development of organometal halide perovskite solar cells has lead to a dramatic surge in power conversion efficiency up to 20%. Unfortunately, the most efficient perovskite solar cells all contain lead (Pb), which is an unsettling flaw that leads to severe environmental concerns and is therefore a stumbling block envisioning their large-scale application. Aiming for the retention of favorable electro-optical properties, tin (Sn) has been considered the most likely substitute. Preliminary studies have however shown that Sn-based perovskites are highly unstable and, moreover, Sn is also enlisted as a harmful chemical, with similar concerns regarding environment and health. To bring more clarity into the appropriateness of both metals in perovskite solar cells, we provide a case study with systematic comparison regarding the environmental impact of Pb- and Sn-based perovskites, using zebrafish (Danio Rerio) as model organism. Uncovering an unexpected route of intoxication in the form of acidification, it is shown that Sn based perovskite may not be the ideal Pb surrogate.

Assessing the toxicity of Pb- and Sn-based perovskite solar cells in model organism Danio rerio

Science.gov (United States)

Babayigit, Aslihan; Duy Thanh, Dinh; Ethirajan, Anitha; Manca, Jean; Muller, Marc; Boyen, Hans-Gerd; Conings, Bert

2016-01-01

Intensive development of organometal halide perovskite solar cells has lead to a dramatic surge in power conversion efficiency up to 20%. Unfortunately, the most efficient perovskite solar cells all contain lead (Pb), which is an unsettling flaw that leads to severe environmental concerns and is therefore a stumbling block envisioning their large-scale application. Aiming for the retention of favorable electro-optical properties, tin (Sn) has been considered the most likely substitute. Preliminary studies have however shown that Sn-based perovskites are highly unstable and, moreover, Sn is also enlisted as a harmful chemical, with similar concerns regarding environment and health. To bring more clarity into the appropriateness of both metals in perovskite solar cells, we provide a case study with systematic comparison regarding the environmental impact of Pb- and Sn-based perovskites, using zebrafish (Danio Rerio) as model organism. Uncovering an unexpected route of intoxication in the form of acidification, it is shown that Sn based perovskite may not be the ideal Pb surrogate. PMID:26759068

Thermal Fatigue Evaluation of Pb-Free Solder Joints: Results, Lessons Learned, and Future Trends

Science.gov (United States)

Coyle, Richard J.; Sweatman, Keith; Arfaei, Babak

2015-09-01

Thermal fatigue is a major source of failure of solder joints in surface mount electronic components and it is critically important in high reliability applications such as telecommunication, military, and aeronautics. The electronic packaging industry has seen an increase in the number of Pb-free solder alloy choices beyond the common near-eutectic Sn-Ag-Cu alloys first established as replacements for eutectic SnPb. This paper discusses the results from Pb-free solder joint reliability programs sponsored by two industry consortia. The characteristic life in accelerated thermal cycling is reported for 12 different Pb-free solder alloys and a SnPb control in 9 different accelerated thermal cycling test profiles in terms of the effects of component type, accelerated thermal cycling profile and dwell time. Microstructural analysis on assembled and failed samples was performed to investigate the effect of initial microstructure and its evolution during accelerated thermal cycling test. A significant finding from the study is that the beneficial effect of Ag on accelerated thermal cycling reliability (measured by characteristic lifetime) diminishes as the severity of the accelerated thermal cycling, defined by greater ΔT, higher peak temperature, and longer dwell time increases. The results also indicate that all the Pb-free solders are more reliable in accelerated thermal cycling than the SnPb alloy they have replaced. Suggestions are made for future work, particularly with respect to the continued evolution of alloy development for emerging application requirements and the value of using advanced analytical methods to provide a better understanding of the effect of microstructure and its evolution on accelerated thermal cycling performance.

Detecting Liquefied Petroleum Gas (LPG) at Room Temperature Using ZnSnO3/ZnO Nanowire Piezo-Nanogenerator as Self-Powered Gas Sensor.

Science.gov (United States)

Fu, Yongming; Nie, Yuxin; Zhao, Yayu; Wang, Penglei; Xing, Lili; Zhang, Yan; Xue, Xinyu

2015-05-20

High sensitivity, selectivity, and reliability have been achieved from ZnSnO3/ZnO nanowire (NW) piezo-nanogenerator (NG) as self-powered gas sensor (SPGS) for detecting liquefied petroleum gas (LPG) at room temperature (RT). After being exposed to 8000 ppm LPG, the output piezo-voltage of ZnSnO3/ZnO NW SPGS under compressive deformation is 0.089 V, much smaller than that in air ambience (0.533 V). The sensitivity of the SPGS against 8000 ppm LPG is up to 83.23, and the low limit of detection is 600 ppm. The SPGS has lower sensitivity against H2S, H2, ethanol, methanol and saturated water vapor than LPG, indicating good selectivity for detecting LPG. After two months, the decline of the sensing performance is less than 6%. Such piezo-LPG sensing at RT can be ascribed to the new piezo-surface coupling effect of ZnSnO3/ZnO nanocomposites. The practical application of the device driven by human motion has also been simply demonstrated. This work provides a novel approach to fabricate RT-LPG sensors and promotes the development of self-powered sensing system.

Microstructural evolution and tensile properties of Sn-Ag-Cu mixed with Sn-Pb solder alloys

Energy Technology Data Exchange (ETDEWEB)

Wang Fengjiang [Department of Materials Science and Engineering and Materials Research Center, Missouri University of Science and Technology, Rolla, MO 65401 (United States); O' Keefe, Matthew [Department of Materials Science and Engineering and Materials Research Center, Missouri University of Science and Technology, Rolla, MO 65401 (United States)], E-mail: mjokeefe@mst.edu; Brinkmeyer, Brandon [Department of Materials Science and Engineering and Materials Research Center, Missouri University of Science and Technology, Rolla, MO 65401 (United States)

2009-05-27

The effect of incorporating eutectic Sn-Pb solder with Sn-3.0Ag-0.5Cu (SAC) Pb-free solder on the microstructure and tensile properties of the mixed alloys was investigated. Alloys containing 100, 75, 50, 25, 20, 15, 10, 5 and 0 wt% SAC, with the balance being Sn-37Pb eutectic solder alloy, were prepared and characterized. Optical and scanning electron microscopy were used to analyze the microstructures while 'mini-tensile' test specimens were fabricated and tested to determine mechanical properties at the mm length scale, more closely matching that of the solder joints. Microstructural analysis indicated that a Pb-rich phase formed and was uniformly distributed at the boundary between the Sn-rich grains or between the Sn-rich and the intermetallic compounds in the solder. Tensile results showed that mixing of the alloys resulted in an increase in both the yield and the ultimate tensile strength compared to the original solders, with the 50% SAC-50% Sn-Pb mixture having the highest measured strength. Initial investigations indicate the formation and distribution of a Pb-rich phase in the mixed solder alloys as the source of the strengthening mechanism.

Synthesis of bulk nanocrystalline Pb-Sn-Te alloy under high pressure

International Nuclear Information System (INIS)

Zhu, P W; Chen, L X; Jia, X; Ma, H A; Ren, G Z; Guo, W L; Liu, H J; Zou, G T

2002-01-01

Pb-Sn-Te bulk nanocrystalline (NC) materials are prepared successfully by quenching melts under high pressure. The mean particle size is about 100 nm and the crystal structure is NaCl type. The mechanism of formation of the bulk NC alloy is explained: there is an increasing of the nucleation rate and a decrease in the growth rate of nuclei with increase of pressure during the solidification processes. The thermoelectric properties of Pb-Sn-Te bulk NC alloy are enhanced. This method is promising for producing thermoelectric materials with improved high-energy conversion efficiency

Design of lead-free candidate alloys for high-temperature soldering based on the Au–Sn system

DEFF Research Database (Denmark)

Chidambaram, Vivek; Hattel, Jesper Henri; Hald, John

2010-01-01

of the Au–Sn binary system were explored in this work. Furthermore, the effects of thermal aging on the microstructure and microhardness of these promising Au–Sn based ternary alloys were investigated. For this purpose, the candidate alloys were aged at a lower temperature, 150°C for up to 1week...

A study of structural, electrical, and optical properties of p-type Zn-doped SnO2 films versus deposition and annealing temperature

Science.gov (United States)

Le, Tran; Phuc Dang, Huu; Luc, Quang Ho; Hieu Le, Van

2017-04-01

This study presents a detailed investigation of the structural, electrical, and optical properties of p-type Zn-doped SnO2 versus the deposition and annealing temperature. Using a direct-current (DC) magnetron sputtering method, p-type transparent conductive Zn-doped SnO2 (ZTO) films were deposited on quartz glass substrates. Zn dopants incorporated into the SnO2 host lattice formed the preferred dominant SnO2 (1 0 1) and (2 1 1) planes. X-ray photoelectron spectroscopy (XPS) was used for identifying the valence state of Zn in the ZTO film. The electrical property of ZTO films changed from n-type to p-type at the threshold temperature of 400 °C, and the films achieved extremely high conductivity at the optimum annealing temperature of 600 °C after annealing for 2 h. The best conductive property of the film was obtained on a 10 wt% ZnO-doped SnO2 target with a resistivity, hole concentration, and hole mobility of 0.22 Ω · cm, 7.19  ×  1018 cm-3, and 3.95 cm2 V-1 s-1, respectively. Besides, the average transmission of films was  >84%. The surface morphology of films was examined using scanning electron microscopy (SEM). Moreover, the acceptor level of Zn2+ was identified using photoluminescence spectra at room temperature. Current-voltage (I-V) characteristics revealed the behavior of a p-ZTO/n-Si heterojunction diode.

Morphology induced photo-degradation study of low temperature, chemically derived ZnO/SnO{sub 2} heterostructure

Energy Technology Data Exchange (ETDEWEB)

Pal, Shreyasi, E-mail: Shreyasi.tua@gamil.com; Maiti, Soumen; Chattopadhyay, Kalyan Kumar, E-mail: kalyan-chattopadhyay@yahoo.com [Thin Films and Nanoscience Laboratory, Department of Physics, Jadavpur University, Kolkata 700032 (India)

2016-05-06

Rational construction of heterostructure is a key pathway to pursue highly active photocatalysts that also offers prospects to explore the relationship between structural aspect and photocatalytic efficiency. Here, we adopted a two-step wet chemical protocol for decoration of ZnO nanowires with SnO{sub 2} nanoclusters. ZnO nanowires were prepared by one pot ambient conditioned synthesis from commercial zinc powder. In sequence, synthesized ZnO nanowires were engineered with varying quantity SnO{sub 2} nanoclusters via low temperature hydrothermal method. Environmental remediation through catalytic activity of the samples was inspected taking two dyes having different ionic character (Methyl Orange and Rhodamine B) under UV irradiation where the optimized hybrid displayed better performance than mono component oxides. Enhancement in catalytic performance could be enlightened by the heterostructure formation at the ZnO/SnO{sub 2} interface which in turns prolonged photogenerated carrier separation and extend the photo response range. Furthermore, the photocatalysis performance by heterostructure could be recycled for several times without noticeable decrease in their catalytic activity.

Solid Liquid Interdiffusion Bonding of (Pb, Sn)Te Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer

Science.gov (United States)

Chuang, T. H.; Lin, H. J.; Chuang, C. H.; Yeh, W. T.; Hwang, J. D.; Chu, H. S.

2014-12-01

A (Pb, Sn)Te thermoelectric element plated with a Ni barrier layer and a Ag reaction layer has been joined with a Cu electrode coated with Ag and Sn thin films using a solid-liquid interdiffusion bonding method. This method allows the interfacial reaction between Ag and Sn such that Ag3Sn intermetallic compounds form at low temperature and are stable at high temperature. In this study, the bonding strength was about 6.6 MPa, and the specimens fractured along the interface between the (Pb, Sn)Te thermoelectric element and the Ni barrier layer. Pre-electroplating a film of Sn with a thickness of about 1 μm on the thermoelectric element and pre-heating at 250°C for 3 min ensures the adhesion between the thermoelectric material and the Ni barrier layer. The bonding strength is thus increased to a maximal value of 12.2 MPa, and most of the fractures occur inside the thermoelectric material. During the bonding process, not only the Ag3Sn intermetallics but also Cu6Sn5 forms at the Ag3Sn/Cu interface, which transforms into Cu3Sn with increases in the bonding temperature or bonding time.

Dielectric and magnetic properties of (Zn, Co) co-doped SnO2 nanoparticles

International Nuclear Information System (INIS)

Rajwali, Khan; Fang Ming-Hu

2015-01-01

Polycrystalline samples of (Zn, Co) co-doped SnO 2 nanoparticles were prepared using a co-precipitation method. The influence of (Zn, Co) co-doping on electrical, dielectric, and magnetic properties was studied. All of the (Zn, Co) co-doped SnO 2 powder samples have the same tetragonal structure of SnO 2 . A decrease in the dielectric constant was observed with the increase of Co doping concentration. It was found that the dielectric constant and dielectric loss values decrease, while AC electrical conductivity increases with doping concentration and frequency. Magnetization measurements revealed that the Co doping SnO 2 samples exhibits room temperature ferromagnetism. Our results illustrate that (Zn, Co) co-doped SnO 2 nanoparticles have an excellent dielectric, magnetic properties, and high electrical conductivity than those reported previously, indicating that these (Zn, Co) co-doped SnO 2 materials can be used in the field of the ultrahigh dielectric material, high frequency device, and spintronics. (paper)

Damping at high homologous temperature in pure Cd, In, Pb, and Sn

International Nuclear Information System (INIS)

Cook, L.S.; Lakes, R.S.

1995-01-01

Typically, if a material possesses the stiffness necessary to be considered a structural material, its damping is low. Conversely, materials with high damping usually do not possess the stiffness necessary to be considered a structural material. Candidate materials for the high stiffness-low damping phase exist in abundance, whereas candidate materials for the moderate stiffness-high damping phase remain to be identified. One possible class of candidate materials for the moderate stiffness-high damping phase is metals at high homologous temperatures. Shear moduli of the specimens at 100 Hz are as follows: 4.1 GPa for indium, 5.7 GPa for lead, 15.7 GPa for tin, and 20.7 GPa for cadmium. Considering the behavior typical of metals, one may think of In and Pb as relatively compliant, while Sn and Cd could be called moderately stiff. The results are of some technological interest in view of the utility of materials with moderately high stiffness and damping. The combination of moderate stiffness and reasonably high loss tangent makes Cd the most promising metal tested with respect to technological applications. The shear modulus of Cd was highest of the metals tested (and very near that of aluminum (G = 27 GPa), which exhibits a loss tangent of about 0.001 at room temperature). The loss tangent of Cd at audio-frequencies was as high or higher than that of the other metals. In addition, frequency dependence of loss tangent was not as large as that observed in the other metals. No clear pattern relating damping to melting point emerged. An understanding in terms of viscoelastic mechanisms is not forthcoming at this time. Among the metal studied, cadmium exhibited a substantial loss tangent of 0.03 to 0.04 over much of the audio range, combined with a moderate stiffness, G = 20.7 GPa

A low temperature situ precipitation route to designing Zn-doped SnO2 photocatalyst with enhanced photocatalytic performance

International Nuclear Information System (INIS)

Jia, Xiaohua; Liu, Yingying; Wu, Xiangyang; Zhang, Zhen

2014-01-01

Highlights: • A new Zn doped SnO 2 photocatalyst was successfully achieved and characterized. • The Zn doped SnO 2 photocatalyst exhibited excellent photocatalytic activity and stability for the photodegradation RhB. • Photocatalytic mechanisms both under visible and UV–vis light irradiation were proposed. - Abstract: Zn doped SnO 2 nanoparticles have been fabricated through the low temperature situ precipitation technique. The morphology, structure and chemical composition of the nanoparticles are characterized using field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), UV–vis diffuse reflectance spectroscopy (DRS), Thermogravimetric-differential scanning calorimetry (TG–DSC) and UV–vis absorption spectroscopy. The products were also characterized by X-ray diffraction (XRD) and X-photoelectron spectrum (XPS), and the results indicated that Sn 4+ ions were successfully substituted by Zn 2+ . Their photocatalytic activities were evaluated using rhodamine B (RhB) as a decomposition objective. The results show that the Zn doped SnO 2 display higher photocatalytic activities in the degradation of RhB than pure ZnO products by exposure to UV irradiation. A possible reason of the increased photocatalytic activity of Zn doped SnO 2 is attributed to intrinsic oxygen vacancies in nanoparticles and extrinsic defect due to Zn hole doping

Large linear magnetoresistance in topological crystalline insulator Pb_0_._6Sn_0_._4Te

International Nuclear Information System (INIS)

Roychowdhury, Subhajit; Ghara, Somnath; Guin, Satya N.; Sundaresan, A.; Biswas, Kanishka

2016-01-01

Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb_0_._6Sn_0_._4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as ∼200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb_0_._6Sn_0_._4Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor. - Graphical abstract: Large non-saturating linear magnetoresistance has been evidenced in topological crystalline insulator, Pb_0_._6Sn_0_._4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. - Highlights: • Large non-saturating linear magnetoresistance was achieved in the topological crystalline insulator, Pb_0_._6Sn_0_._4Te. • Highest magnetoresistance value as high as ~200% was achieved at 3 K at magnetic field of 9 T. • Linear magnetoresistance in Pb_0_._6Sn_0_._4Te is mainly governed by the spatial fluctuation of the carrier mobility.

Spectroscopic ellipsometry characterization of ZnO:Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering

Science.gov (United States)

Janicek, Petr; Niang, Kham M.; Mistrik, Jan; Palka, Karel; Flewitt, Andrew J.

2017-11-01

ZnO:Sn thin films were deposited onto thermally oxidized silicon substrates using a remote plasma reactive sputtering. Their optical constants (refractive index n and extinction coefficient k) were determined from ellipsometric data recorded over a wide spectral range (0.05-6 eV). Parametrization of ZnO:Sn complex dielectric permittivity consists of a parameterized semiconductor oscillator function describing the short wavelength absorption edge, a Drude oscillator describing free carrier absorption in near-infrared part of spectra and a Lorentz oscillator describing the long wavelength absorption edge and intra-band absorption in the ultra-violet part of the spectra. Using a Mott-Davis model, the increase in local disorder with increasing Sn doping is quantified from the short wavelength absorption edge onset. Using the Wemple-DiDomenico single oscillator model for the transparent part of the optical constants spectra, an increase in the centroid distance of the valence and conduction bands with increasing Sn doping is shown and only slight increase in intensity of the inter-band optical transition due to Sn doping occurs. The Drude model applied in the near-infrared part of the spectra revealed the free carrier concentration and mobility of ZnO:Sn. Results show that the range of transparency of prepared ZnO:Sn layers is not dramatically affected by Sn doping whereas electrical conductivity could be controlled by Sn doping. Refractive index in the transparent part is comparable with amorphous Indium Gallium Zinc Oxide allowing utilization of prepared ZnO:Sn layers as an indium-free alternative.

The high-temperature modification of LuAgSn and high-pressure high-temperature experiments on DyAgSn, HoAgSn, and YbAgSn

Energy Technology Data Exchange (ETDEWEB)

Heying, B.; Rodewald, U.C.; Hermes, W.; Schappacher, F.M.; Riecken, J.F.; Poettgen, R. [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Heymann, G.; Huppertz, H. [Muenchen Univ. (Germany). Dept. fuer Chemie und Biochemie; Sebastian, C.P. [Max-Planck-Institut fuer Chemische Physik Fester Stoffe, Dresden (Germany)

2008-02-15

The high-temperature modification of LuAgSn was obtained by arc-melting an equiatomic mixture of the elements followed by quenching the melt on a water-cooled copper crucible. HT-LuAgSn crystallizes with the NdPtSb-type structure, space group P6{sub 3}mc: a = 463.5(1), c = 723.2(1) pm, wR2 = 0.0270, 151 F{sup 2}, and 11 variables. The silver and tin atoms build up two-dimensional, puckered [Ag{sub 3}Sn{sub 3}] networks (276 pm Ag-Sn) that are charge-balanced and separated by the lutetium atoms. The Ag-Sn distances between the [Ag{sub 3}Sn{sub 3}] layers of 294 pm are much longer. Single crystals of isotypic DyAgSn (a = 468.3(1), c = 734.4(1) pm, wR2 = 0.0343, 411 F{sup 2}, and 11 variables) and HoAgSn (a = 467.2(1), c = 731.7(2) pm, wR2 = 0.0318, 330 F{sup 2}, and 11 variables) were obtained from arc-melted samples. Under high-pressure (up to 12.2 GPa) and high-temperature (up to 1470 K) conditions, no transitions to a ZrNiAl-related phase have been observed for DyAgSn, HoAgSn, and YbAgSn. HT-TmAgSn shows Curie-Weiss paramagnetism with {mu}{sub eff} = 7.53(1) {mu}{sub B}/Tm atom and {theta}P = -15.0(5) K. No magnetic ordering was evident down to 3 K. HT-LuAgSn is a Pauli paramagnet. Room-temperature {sup 119}Sn Moessbauer spectra of HT-TmAgSn and HT-LuAgSn show singlet resonances with isomer shifts of 1.78(1) and 1.72(1) mm/s, respectively. (orig.)

Monolithic and Flexible ZnS/SnO2 Ultraviolet Photodetectors with Lateral Graphene Electrodes.

Science.gov (United States)

Zhang, Cheng; Xie, Yunchao; Deng, Heng; Tumlin, Travis; Zhang, Chi; Su, Jheng-Wun; Yu, Ping; Lin, Jian

2017-05-01

A continuing trend of miniaturized and flexible electronics/optoelectronic calls for novel device architectures made by compatible fabrication techniques. However, traditional layer-to-layer structures cannot satisfy such a need. Herein, a novel monolithic optoelectronic device fabricated by a mask-free laser direct writing method is demonstrated in which in situ laser induced graphene-like materials are employed as lateral electrodes for flexible ZnS/SnO 2 ultraviolet photodetectors. Specifically, a ZnS/SnO 2 thin film comprised of heterogeneous ZnS/SnO 2 nanoparticles is first coated on polyimide (PI) sheets by a solution process. Then, CO 2 laser irradiation ablates designed areas of the ZnS/SnO 2 thin film and converts the underneath PI into highly conductive graphene as the lateral electrodes for the monolithic photodetectors. This in situ growth method provides good interfaces between the graphene electrodes and the semiconducting ZnS/SnO 2 resulting in high optoelectronic performance. The lateral electrode structure reduces total thickness of the devices, thus minimizing the strain and improving flexibility of the photodetectors. The demonstrated lithography-free monolithic fabrication is a simple and cost-effective method, showing a great potential for developement into roll-to-roll manufacturing of flexible electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photoluminescence study of ZnS and ZnS:Pb nanoparticles

International Nuclear Information System (INIS)

Virpal,; Hastir, Anita; Kaur, Jasmeet; Singh, Gurpreet; Singh, Ravi Chand

2015-01-01

Photoluminescence (PL) study of pure and 5wt. % lead doped ZnS prepared by co-precipitation method was conducted at room temperature. The prepared nanoparticles were characterized by X-ray Diffraction (XRD), UV-Visible (UV-Vis) spectrophotometer, Photoluminescence (PL) and Raman spectroscopy. XRD patterns confirm cubic structure of ZnS and PbS in doped sample. The band gap energy value increased in case of Pb doped ZnS nanoparticles. The PL spectrum of pure ZnS was de-convoluted into two peaks centered at 399nm and 441nm which were attributed to defect states of ZnS. In doped sample, a shoulder peak at 389nm and a broad peak centered at 505nm were observed. This broad green emission peak originated due to Pb activated ZnS states

Unprecedented Integral-Free Debye Temperature Formulas: Sample Applications to Heat Capacities of ZnSe and ZnTe

Directory of Open Access Journals (Sweden)

R. Pässler

2017-01-01

Full Text Available Detailed analytical and numerical analyses are performed for combinations of several complementary sets of measured heat capacities, for ZnSe and ZnTe, from the liquid-helium region up to 600 K. The isochoric (harmonic parts of heat capacities, CVh(T, are described within the frame of a properly devised four-oscillator hybrid model. Additional anharmonicity-related terms are included for comprehensive numerical fittings of the isobaric heat capacities, Cp(T. The contributions of Debye and non-Debye type due to the low-energy acoustical phonon sections are represented here for the first time by unprecedented, integral-free formulas. Indications for weak electronic contributions to the cryogenic heat capacities are found for both materials. A novel analytical framework has been constructed for high-accuracy evaluations of Debye function integrals via a couple of integral-free formulas, consisting of Debye’s conventional low-temperature series expansion in combination with an unprecedented high-temperature series representation for reciprocal values of the Debye function. The zero-temperature limits of Debye temperatures have been detected from published low-temperature Cp(T data sets to be significantly lower than previously estimated, namely, 270 (±3 K for ZnSe and 220 (±2 K for ZnTe. The high-temperature limits of the “true” (harmonic lattice Debye temperatures are found to be 317 K for ZnSe and 262 K for ZnTe.

Electrochemical corrosion behaviour of lead-free Sn-8.5 Zn-X Ag-0.1 Al-0.5 Ga solder in 3.5% NaCl solution

International Nuclear Information System (INIS)

Mohanty, Udit Surya; Lin, K.-L.

2005-01-01

The electrochemical corrosion behaviour of Pb-free Sn-8.5 Zn-X Ag-0.1 Al-0.5 Ga solder in 3.5% NaCl solution was investigated by using potentiodynamic polarization methods, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) analysis. The results obtained from polarization studies showed that an increase in the Ag content from 0.1 to 1.5 wt% decreased the corrosion current density (I corr ) and shifted the corrosion potential (E corr ) towards more noble values. These changes were also reflected in the linear polarization resistance (LPR), corrosion rate, anodic Tafel slope (b A ) and the cathodic Tafel slope (b c ) values, respectively. Passivation behaviour was noted in the Sn-Zn-X Ag-Al-Ga solders with Ag content > 0.1 wt%. The oxides and hydroxides of zinc were responsible for the formation of passive film. Presence of Ag atoms in the oxide layer also improved the passivation behaviour of solders to a certain extent. X-ray photoelectron spectroscopy revealed that two different oxygen species were formed on the surface films, one was assigned to OH - in Zn(OH) 2 and the other to O 2 - in ZnO. XPS depth profile results revealed that the two species had different depth distribution in the films. SEM and EDX analyses confirmed SnCl 2 as the major corrosion product formed after the electrochemical experiments

Ductile fracture mechanism of low-temperature In-48Sn alloy joint under high strain rate loading.

Science.gov (United States)

Kim, Jong-Woong; Jung, Seung-Boo

2012-04-01

The failure behaviors of In-48Sn solder ball joints under various strain rate loadings were investigated with both experimental and finite element modeling study. The bonding force of In-48Sn solder on an Ni plated Cu pad increased with increasing shear speed, mainly due to the high strain-rate sensitivity of the solder alloy. In contrast to the cases of Sn-based Pb-free solder joints, the transition of the fracture mode from a ductile mode to a brittle mode was not observed in this solder joint system due to the soft nature of the In-48Sn alloy. This result is discussed in terms of the relationship between the strain-rate of the solder alloy, the work-hardening effect and the resulting stress concentration at the interfacial regions.

Properties and Microstructures of Sn-Ag-Cu-X Lead-Free Solder Joints in Electronic Packaging

Directory of Open Access Journals (Sweden)

Lei Sun

2015-01-01

Full Text Available SnAgCu solder alloys were considered as one of the most popular lead-free solders because of its good reliability and mechanical properties. However, there are also many problems that need to be solved for the SnAgCu solders, such as high melting point and poor wettability. In order to overcome these shortcomings, and further enhance the properties of SnAgCu solders, many researchers choose to add a series of alloying elements (In, Ti, Fe, Zn, Bi, Ni, Sb, Ga, Al, and rare earth and nanoparticles to the SnAgCu solders. In this paper, the work of SnAgCu lead-free solders containing alloying elements and nanoparticles was reviewed, and the effects of alloying elements and nanoparticles on the melting temperature, wettability, mechanical properties, hardness properties, microstructures, intermetallic compounds, and whiskers were discussed.

Fast Crystallization and improved Stability of Perovskite Solar Cells with Zn 2 SnO 4 Electron Transporting Layer: Interface Matters

KAUST Repository

Bera, Ashok

2015-12-03

Here we report that mesoporous ternary oxide Zn2SnO4 can significantly promotes the crystallization of hybrid perovskite layers and serves as an efficient electron transporting material in perovskite solar cells. Such devices exhibit an energy conversion efficiency of 13.34%, which is even higher than that achieved with the commonly used TiO2 in the similar experimental conditions (9.1%). Simple one-step spin coating of CH3NH3PbI3−xClx on Zn2SnO4 is found to lead to rapidly crystalized bilayer perovskite structure without any solvent engineering. Furthermore, ultrafast transient absorption measurement reveals efficient charge transfer at the Zn2SnO4/perovskite interface. Most importantly, solar cells with Zn2SnO4 as the electron-transporting material exhibit negligible electrical hysteresis and exceptionally high stability without encapsulation for over one month. Besides underscoring Zn2SnO4 as a highly promising electron transporting material for perovskite solar cells, our results demonstrate the significant role of interfaces on improving the perovskite crystallization and photovoltaic performance.

The effect of micro alloying on the microstructure evolution of Sn-Ag-Cu lead-free solder

Science.gov (United States)

Werden, Jesse

The microelectronics industry is required to obtain alternative Pb-free soldering materials due to legal, environmental, and technological factors. As a joining material, solder provides an electrical and mechanical support in electronic assemblies and therefore, the properties of the solder are crucial to the durability and reliability of the solder joint and the function of the electronic device. One major concern with new Pb-free alternatives is that the microstructure is prone to microstructural coarsening over time which leads to inconsistent properties over the device's lifetime. Power aging the solder is a common method of stabilizing the microstructure for Pb-based alloys, however, it is unclear if this will be an appropriate solution to the microstructural coarsening of Pb-free solders. The goal of this work is to develop a better understanding of the coarsening process in new solder alloys and to suggest methods of stabilizing the solder microstructure. Microalloying is one potential solution to the microstructural coarsening problem. This experiment consists of a microstructural coarsening study of SAC305 in which each sample has been alloyed with one of three different solutes, directionally solidified at 100microm/s, and then aged at three different temperatures over a total period of 20 days. There are several important conclusions from this experiment. First, the coarsening kinetics of the intermetallics in the ternary eutectic follow the Ostwald ripening model where r3 in proprotional to t for each alloying constituent. Second, the activation energy for coarsening was found to be 68.1+/-10.3 kJ/mol for the SAC305 samples, Zn had the most significant increase in the activation energy increasing it to 88.8+/-34.9 kJ/mol for the SAC+Zn samples, Mn also increased the activation energy to 83.2+/-20.8 kJ/mol for the SAC+Mn samples, and Sb decreased the activation energy to 48.0+/-3.59 kJ/mol for the SAC+Sb samples. Finally, it was found that the

High blocking temperature in SnO{sub 2} based super-paramagnetic diluted magnetic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Mounkachi, O., E-mail: o.mounkachi@mascir.com [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Salmani, E. [LMPHE, associé au CNRST (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); El Moussaoui, H. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); Masrour, R. [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, Safi (Morocco); Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Hamedoun, M. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); Ez-Zahraouy, H. [LMPHE, associé au CNRST (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Benyoussef, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE, associé au CNRST (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco)

2014-11-25

Highlights: • Simple doping, (Sn,Fe)O{sub 2} exhibits a soft ferromagnetism at low temperature. • High blocking temperature was observed for Cu doped (Sn,Fe)O{sub 2} nanocrystalline. • Experimental results are confirmed by ab initio calculations. - Abstract: (Fe,Cu)-doped SnO{sub 2} nanocrystals was synthesized using the co-precipitation method. Magnetic Properties Measurement System (MPMS) revealed that for simple doping, Fe-doped SnO{sub 2} soft ferromagnetism at low temperature appears, while the ferromagnetic phase is stable at temperature higher than room temperature for Cu co-doping element. The ferromagnetism is significantly enhanced by the Cu addition to Fe-doped SnO{sub 2}, according to the ZFC and FC magnetizations and the hysteresis loops. The evidences for the existence of superparamagnetism are characterized and high blocking temperature super-paramagnetism in (Fe,Cu)-doped SnO{sub 2} nanocrystals was observed. Based on first-principles calculations, we have investigated electronic structures and magnetic properties of Fe-doped SnO{sub 2} and (Fe,Cu)-doped SnO{sub 2} with and without defect with LDA and LDA-SIC approximations. The results suggest that the oxygen vacancies (V{sub O}) play a critical role in the activation of ferromagnetism in Fe doped SnO{sub 2}. For (Fe,Cu)-doped SnO{sub 2} the results exhibit that Cu strongly influences on the magnetic properties of these doped systems which are in good agreement with the experimental observations. Electronic structure show that the presence of Cu promote the ferromagnetic bound magnetic polaron interaction through the carriers introduce by d (Cu)

Surface properties and dye loading behavior of Zn2SnO4 nanoparticles hydrothermally synthesized using different mineralizers

International Nuclear Information System (INIS)

Annamalai, Alagappan; Eo, Yang Dam; Im, Chan; Lee, Man-Jong

2011-01-01

We present for the first time the influence of different mineralizers on the isoelectric point (IEP) of zinc stannate (Zn 2 SnO 4 ) nanoparticles hydrothermally prepared using three different mineralizers, viz., Na 2 CO 3 , KOH and tert-butyl amine, and the effect of the IEPs on the dye loading behavior of Zn 2 SnO 4 based photoelectrodes in dye sensitized solar cells (DSSCs). To produce highly crystalline, uniform sized Zn 2 SnO 4 nanoparticles, hydrothermal processing parameters, such as reaction temperature, time, and the mineralizers used have been critically adjusted. The structural and morphological features of the as-synthesized Zn 2 SnO 4 nanoparticles have been observed using both scanning and transmission electron microscopy. For the surface state characterization of shape- and size-controlled Zn 2 SnO 4 nanoparticles, the IEPs of Zn 2 SnO 4 surfaces were determined through zeta potential measurements. The IEPs were found to be 5.7, 7.4 and 8.1 for Zn 2 SnO 4 nanoparticles formed using Na 2 CO 3 , KOH and tert-butyl amine, respectively, suggesting that the surface properties of Zn 2 SnO 4 nanoparticles can be manipulated through the choice of the mineralizers used during the hydrothermal reaction. The amount of N719 dye loading on the surfaces of Zn 2 SnO 4 electrodes having different IEPs was also evaluated. It was revealed that the higher the IEP, the higher the dye loading amount, which means that the IEP mainly affects the dye loading at the dye-metal oxide interface. - Highlights: → The effect of various mineralizers on the isoelectric point of Zn 2 SnO 4 was discussed. → The IEP of Zn 2 SnO 4 can be modified by the choice of mineralizer. → Change in IEP affects the surface properties and the morphology of Zn 2 SnO 4 particles. → Modified surface affects the N719 dye loading behaviour of the Zn 2 SnO 4 based DSSCs.

Effects of hydrazine on the solvothermal synthesis of Cu2ZnSnSe4 and Cu2CdSnSe4 nanocrystals for particle-based deposition of films

International Nuclear Information System (INIS)

Chiang, Ming-Hung; Fu, Yaw-Shyan; Shih, Cheng-Hung; Kuo, Chun-Cheng; Guo, Tzung-Fang; Lin, Wen-Tai

2013-01-01

The effects of hydrazine on the synthesis of Cu 2 ZnSnSe 4 (CZTSe) and Cu 2 CdSnSe 4 (CCTSe) nanocrystals in an autoclave as a function of temperature and time were explored. On heating at 190 °C for 24-72 h, pure CZTSe and CCTSe nanocrystals could readily grow in the hydrazine-added solution, while in the hydrazine-free solution the intermediate phases such as ZnSe, Cu 2 Se, and Cu 2 SnSe 3 , and Cu 2 SnSe 3 and CdSe associated with the CZTSe and CCTSe nanocrystals grew, respectively. This result reveals that hydrazine can speed up the synthesis of pure CZTSe and CCTSe nanocrystals via a solvothermal process. The mechanisms for the hydrazine-enhanced growth of CZTSe and CCTSe nanocrystals were discussed. The pure CZTSe and CCTSe nanocrystals were subsequently fabricated to the smooth films by spin coating without further annealing in selenium atmosphere. This processing may be beneficial to the fabrication of the absorber layer for solar cells and thermoelectric devices. - Highlights: • Hydrazine enhances the growth of pure Cu 2 ZnSnSe 4 and Cu 2 CdSnSe 4 nanocrystals. • The nanocrystals can be fabricated to films by spin coating without annealing. • This solvothermal processing is promising for the fabrication of thin film devices

Well-crystalline porous ZnO-SnO2 nanosheets: an effective visible-light driven photocatalyst and highly sensitive smart sensor material.

Science.gov (United States)

Lamba, Randeep; Umar, Ahmad; Mehta, S K; Kansal, Sushil Kumar

2015-01-01

This work demonstrates the synthesis and characterization of porous ZnO-SnO2 nanosheets prepared by the simple and facile hydrothermal method at low-temperature. The prepared nanosheets were characterized by several techniques which revealed the well-crystallinity, porous and well-defined nanosheet morphology for the prepared material. The synthesized porous ZnO-SnO2 nanosheets were used as an efficient photocatalyst for the photocatalytic degradation of highly hazardous dye, i.e., direct blue 15 (DB 15), under visible-light irradiation. The excellent photocatalytic degradation of prepared material towards DB 15 dye could be ascribed to the formation of ZnO-SnO2 heterojunction which effectively separates the photogenerated electron-hole pairs and possess high surface area. Further, the prepared porous ZnO-SnO2 nanosheets were utilized to fabricate a robust chemical sensor to detect 4-nitrophenol in aqueous medium. The fabricated sensor exhibited extremely high sensitivity of ~ 1285.76 µA/mmol L(-1)cm(-2) and an experimental detection limit of 0.078 mmol L(-1) with a linear dynamic range of 0.078-1.25 mmol L(-1). The obtained results confirmed that the prepared porous ZnO-SnO2 nanosheets are potential material for the removal of organic pollutants under visible light irradiation and efficient chemical sensing applications. Copyright © 2014 Elsevier B.V. All rights reserved.

Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol-gel method

International Nuclear Information System (INIS)

Tsay, C.-Y.; Cheng, H.-C.; Tung, Y.-T.; Tuan, W.-H.; Lin, C.-K.

2008-01-01

In this study, transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto alkali-free glass substrates by a sol-gel method; the effect of Sn doping on crystallinity, microstructural and optical properties was investigated. The atomic percentages of dopant in ZnO-based sols were Sn/Zn = 0, 1, 2, 3, and 5 at.%. The as-deposited films were pre-heated at 300 deg. C for 10 min and then annealed in air at 500 deg. C for 1 h. The results show that Sn-doped ZnO thin films demonstrate obviously improved surface roughness, enhanced transmittance in the 400-600 nm wavelength range and reduced average crystallite size. Among all of the annealed ZnO-based films in this study, films doped with 2 at.% Sn concentration exhibited the best properties, namely an average transmittance of 90%, an RMS roughness value of 1.92 nm and a resistivity of 9.3 x 10 2 Ω-cm

Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Pan, Zhanchang; Luo, Junming; Tian, Xinlong; Wu, Shoukun; Chen, Chun; Deng, Jianfeng; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

2014-01-01

Highlights: • F/Sn and Al co-doped ZnO thin films were synthesized by sol–gel method. • The co-doped nanocrystals exhibit good crystal quality. • The origin of the photoluminescence emissions was discussed. • The films showed high transmittance and low resistivity. -- Abstract: Al doped ZnO, Al–Sn co-doped ZnO and Al–F co-doped ZnO nanocrystals were successfully synthesized onto glass substrates by the sol–gel method. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The results indicated that all the films were polycrystalline with a hexagonal wurtzite structure and exhibited a c-axis preferred orientation. The electrical and optical properties were also investigated by 4-point probe device and Uv–vis spectroscopy, room temperature photoluminescence (PL) and Raman spectrum (Raman), respectively. The PL and Raman results suggested that the co-doped films with a very low defect concentration and exhibit a better crystallinity than AZO thin films. The XPS study confirmed the incorporation of Al, Sn and F ions in the ZnO lattice

Synthesis, Characterization, and Photocatalytic Activity of Zn-Doped SnO2/Zn2SnO4 Coupled Nanocomposites

Directory of Open Access Journals (Sweden)

Tiekun Jia

2014-01-01

Full Text Available Zn-doped SnO2/Zn2SnO4 nanocomposites were prepared via a two-step hydrothermal synthesis method. The as-prepared samples were characterized by X-ray diffraction (XRD, field-emission scanning electron microscopy (FESEM, transmission electron microscopy (TEM, UV-vis diffuse reflection spectroscopy, and adsorption-desorption isotherms. The results of FESEM and TEM showed that the as-prepared Zn-doped SnO2/Zn2SnO4 nanocomposites are composed of numerous nanoparticles with the size ranging from 20 nm to 50 nm. The specific surface area of the as-prepared Zn-doped SnO2/Zn2SnO4 nanocomposites is estimated to be 71.53 m2/g by the Brunauer-Emmett-Teller (BET method. The photocatalytic activity was evaluated by the degradation of methylene blue (MB, and the resulting showed that Zn-doped SnO2/Zn2SnO4 nanocomposites exhibited excellent photocatalytic activity due to their higher specific surface area and surface charge carrier transfer.

Comparative thermodynamic analysis of the Pb-Au0.7Sn0.3 section in the Pb-Au-Sn ternary system

International Nuclear Information System (INIS)

Trumic, B.; Zivkovic, D.; Zivkovic, Z.; Manasijevic, D.

2005-01-01

The results of comparative thermodynamic analysis of Pb-Au 0.7 Sn 0.3 section in Pb-Au-Sn system are presented in this paper. Investigation was done comparatively by calorimetric measurements and thermodynamic calculation according to the general solution model. Thermodynamic parameters, such as partial and integral molar quantities, were determined at different temperatures. The comparison between experimental and calculated results showed mutual agreement. Demixing tendency of lead, presented in the positive deviation from ideal behavior, was confirmed through the study of concentration fluctuation in the long-wavelength limit. Also, chosen alloys in the investigated section were characterized using SEM-EDX analysis

Theoretical prediction of thermodynamic activities of liquid Au-Sn-X (X=Bi, Sb, Zn) solder systems

Energy Technology Data Exchange (ETDEWEB)

Awe, O.E., E-mail: draweoe2004@yahoo.com [Department of Physics, University of Ibadan, Ibadan (Nigeria); Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife (Nigeria); Oshakuade, O.M. [Department of Physics, University of Ibadan, Ibadan (Nigeria)

2017-02-15

Molecular interaction volume model has been theoretically used to predict the thermodynamic activities of tin in Au-Sn-Bi and Au-Sn-Sb and the thermodynamic activity of zinc in Au-Sn-Zn at experimental temperatures 800 K, 873 K and 973 K, respectively. On the premise of agreement between the predicted and experimental values, we predicted the activities of the remaining two components in each of the three systems. This prediction was extended from three cross-sections to five cross-sections, and to temperature range 400–600 K, relevant for applications. Iso-activities were plotted. Results show that addition of tin reduces the tendency for chemical short range order in both Au-Sb and Au-Zn systems, while addition of gold and bismuth, respectively, reduce the tendency for chemical short range order in Sn-Sb and Au-Sn systems. Also, we found that, in the desired high-temperature region for applications, while a combination of chemical order and miscibility of components exist in both Au-Sn-Bi and Au-Sn-Zn systems, only chemical order exist in the Au-Sn-Sb system. Results, further show that increase in temperature reduces the phase separation tendency in Au-Sn-Bi system.

Elastic and inelastic {alpha}-scattering cross-sections obtained with the 44 MeV fixed energy Saclay cyclotron on separated targets of {sup 24}Mg, {sup 25}Mg, {sup 26}Mg, {sup 40}Ca, {sup 46}Ti, {sup 48}Ti, {sup 50}Ti, {sup 52}Cr, {sup 54}Fe, {sup 56}Fe, {sup 58}Fe, {sup 58}Ni, {sup 60}Ni, {sup 62}Ni, {sup 64}Ni, {sup 63}Cu, {sup 65}Cu, {sup 64}Zn, {sup 112}Sn, {sup 114}Sn, {sup 116}Sn, {sup 118}Sn, {sup 120}Sn, {sup 122}Sn, {sup 124}Sn and {sup 208}Pb using the Saclay fixed-energy cyclotron; Sections efficaces differentielles elastiques et inelastiques obtenues par diffusion de particules {alpha} de 44 MeV sur des cibles de {sup 24}Mg, {sup 25}Mg, {sup 26}Mg, {sup 40}Ca, {sup 46}Ti, {sup 48}Ti, {sup 50}Ti, {sup 52}Cr, {sup 54}Fe, {sup 56}Fe, {sup 58}Fe, {sup 58}Ni, {sup 60}Ni, {sup 62}Ni, {sup 64}Ni, {sup 63}Cu, {sup 65}Cu, {sup 64}Zn, {sup 112}Sn, {sup 114}Sn, {sup 116}Sn, {sup 118}Sn, {sup 120}Sn, {sup 122}Sn, {sup 124}Sn et {sup 208}Pb au cyclotron a energie fixe de saclay

Energy Technology Data Exchange (ETDEWEB)

Bruge, G [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires. Departement de physique nucleaire, service de physique nucleaire a moyenne energie

1967-01-01

This report contains elastic and inelastic {alpha}-scattering cross-sections obtained with the 44 MeV fixed energy Saclay cyclotron on Mg, Ca, Ti, Cr, Fe, Ni, Co, Zn, Sn and Pb enriched targets. (author) [French] Ce rapport contient les tableaux des sections efficaces differentielles obtenues par diffusion elastique et inelastique des particules {alpha} de 44 MeV, fournies par le cyclotron a energie fixe de Saclay, sur des cibles d'isotopes separes de Mg, Ca, Ti, Cr, Fe, Ni, Co, Zn, Sn et Pb. (auteur)

On the possibility of room temperature ferromagnetism on chunk-shape BaSnO3/ZnO core/shell nanostructures

Science.gov (United States)

Rajamanickam, N.; Jayakumar, K.; Ramachandran, K.

2018-04-01

Core/shell BaSnO3/ZnO (BS-ZO) nanostructures were prepared by oxalate precipitation method and wet-chemical method. BaSnO3 (BSO) cubic perovskite structure and ZnO hexagonal wurtzite structure were confirmed by X-ray diffraction (XRD). The crystallite sizes is 23 nm, 29 nm and 27 nm for BSO, ZnO and BS-ZO, respectively. Chunk-shape and cuboids morphology observed from scanning electron microscopy (SEM) analysis. The magnetic properties were studied by VSM for bare and core-shell nano systems and the room temperature ferromagnetism observed for core-shell nanostructures. The BSO/ZnO shows enhanced coercivity and saturated magnetization as compared with BSO and ZnO nanostructures.

The behaviour of the elements Ni, Co, Cu, Pb, Zn, Au, Ag, Mo, Sn, W and U in the magmatic, hydrothermal, sedimentary and weathering environments

International Nuclear Information System (INIS)

Anderson, J.R.

1978-01-01

In the last two decades much has been published on the behaviour of certain elements in the magmatic, hydrothermal, sedimentary and weathering environments, but the information is scattered throughout the literature. This situation prompted the present study on the elements Ni, Co, Cu, Pb, Zn, Au, Ag, Mo, Sn, W and U. The behaviour of the elements Ni, Cu, Pb, Zn, Au, Sn, W and U has been studied experimentally in some depth. Ag has been moderately studied, but there is very little information about Co and Mo. Studies on the complexes formed by the elements within the hydrothermal and aqueous environment are often inconclusive and controversial, but conclusions are drawn as to the more likely complexes formed. A genetic classification of ore deposits is used as a framework for the discussion. The source of the elements is regarded as being the mantle, and therefore discussion on other possible sources is beyond the scope of this dissertation. The crystal chemistry and geochemistry of the elements are presented and the essay concludes with a discussion on the elements within their depositional environments

Embedding ultrafine ZnSnO3 nanoparticles into reduced graphene oxide composites as high-performance electrodes for lithium ion batteries

Science.gov (United States)

Ma, Yuhang; Jiang, Ranran; Li, Dan; Dong, Yutao; Liu, Yushan; Zhang, Jianmin

2018-05-01

Ultrafine ZnSnO3 nanoparticles, with an average diameter of 45 nm, homogeneously grown on reduced graphene oxide (rGO) have been successfully fabricated via methods of low temperature coprecipitation, colloid electrostatic self-assembly, and hydrothermal treatment. The uniformly distributed ZnSnO3 nanocrystals could inhibit the restacking of rGO sheets. In turn, the existence of rGO could hinder the growth and aggregation of ZnSnO3 nanoparticles in the synthesis process, increase the conductivity of the composite, and buffer the volume expansion of the ZnSnO3 nanocrystals upon lithium ion insertion and extraction. The obtained ZnSnO3/rGO exhibited superior cycling stability with a discharge/charge capacity of 718/696 mA h g-1 after 100 cycles at a current density of 0.1 A g-1.

Effect of Different HTM Layers and Electrical Parameters on ZnO Nanorod-Based Lead-Free Perovskite Solar Cell for High-Efficiency Performance

Directory of Open Access Journals (Sweden)

Farhana Anwar

2017-01-01

Full Text Available Simulation has been done using SCAPS-1D to examine the efficiency of CH3NH3SnI3-based solar cells including various HTM layers such as spiro-OMeTAD, Cu2O, and CuSCN. ZnO nanorod array has been considered as an ETM layer. Device parameters such as thickness of the CH3NH3SnI3 layer, defect density of interfaces, density of states, and metal work function were studied. For optimum parameters of all three structures, efficiency of 20.21%, 20.23%, and 18.34% has been achieved for spiro-OMeTAD, Cu2O, and CuSCN, respectively. From the simulations, an alternative lead-free perovskite solar cell is introduced with the CH3NH3SnI3 absorber layer, ZnO nanorod ETM layer, and Cu2O HTM layer.

High Temperature Thermoelectric Properties of ZnO Based Materials

DEFF Research Database (Denmark)

Han, Li

of the dopants and dopant concentrations, a large power factor was obtainable. The sample with the composition of Zn0.9Cd0.1Sc0.01O obtained the highest zT ∼0.3 @1173 K, ~0.24 @1073K, and a good average zT which is better than the state-of-the-art n-type thermoelectric oxide materials. Meanwhile, Sc-doped Zn......This thesis investigated the high temperature thermoelectric properties of ZnO based materials. The investigation first focused on the doping mechanisms of Al-doped ZnO, and then the influence of spark plasma sintering conditions on the thermoelectric properties of Al, Ga-dually doped Zn......O. Following that, the nanostructuring effect for Al-doped ZnO was systematically investigated using samples with different microstructure morphologies. At last, the newly developed ZnCdO materials with superior thermoelectric properties and thermal stability were introduced as promising substitutions...

Loss mechanisms in hydrazine-processed Cu2ZnSn(Se,S)4 solar cells

Science.gov (United States)

Gunawan, Oki; Todorov, Teodor K.; Mitzi, David B.

2010-12-01

We present a device characterization study for hydrazine-processed kesterite Cu2ZnSn(Se,S)4 (CZTSSe) solar cells with a focus on pinpointing the main loss mechanisms limiting device efficiency. Temperature-dependent study and time-resolved photoluminescence spectroscopy on these cells, in comparison to analogous studies on a reference Cu(In,Ga)(Se,S)2 (CIGS) cell, reveal strong recombination loss at the CZTSSe/CdS interface, very low minority-carrier lifetimes, and high series resistance that diverges at low temperature. These findings help identify the key areas for improvement of these CZTSSe cells in the quest for a high-performance indium- and tellurium-free solar cell.

Transfer of preheat-treated SnO 2 via a sacrificial bridge-type ZnO layer for ethanol gas sensor

KAUST Repository

Lee, Da Hoon

2017-08-05

The progress in developing the microelectromechanical system (MEMS) heater-based SnO2 gas sensors was hindered by the subsequent heat treatment of the tin oxide (SnO2), nevertheless it is required to obtain excellent sensor characteristics. During the sintering process, the MEMS heater and the contact electrodes can be degraded at such a high temperature, which could reduce the sensor response and reliability. In this research, we presented a process of preheating the printed SnO2 sensing layer on top of a sacrificial bridge-type ZnO layer at such a high temperature, followed by transferring it onto the contact electrodes of sensor device by selective etching of the sacrificial ZnO layer. Therefore, the sensor device was not exposed to the high sintering temperature. The SnO2 gas sensor fabricated by the transfer process exhibited a rectangular sensing curve behavior with a rapid response of 52 s at 20 ppm ethanol concentration. In addition, reliable and repeatable sensing characteristics were obtained even at an ethanol gas concentration of 5 ppm.

Transfer of preheat-treated SnO 2 via a sacrificial bridge-type ZnO layer for ethanol gas sensor

KAUST Repository

Lee, Da Hoon; Kang, Sun Kil; Pak, Yusin; Lim, Namsoo; Lee, Ryeri; Kumaresan, Yogeenth; Lee, Sungeun; Lee, Chaedeok; Ham, Moon-Ho; Jung, Gun Young

2017-01-01

The progress in developing the microelectromechanical system (MEMS) heater-based SnO2 gas sensors was hindered by the subsequent heat treatment of the tin oxide (SnO2), nevertheless it is required to obtain excellent sensor characteristics. During the sintering process, the MEMS heater and the contact electrodes can be degraded at such a high temperature, which could reduce the sensor response and reliability. In this research, we presented a process of preheating the printed SnO2 sensing layer on top of a sacrificial bridge-type ZnO layer at such a high temperature, followed by transferring it onto the contact electrodes of sensor device by selective etching of the sacrificial ZnO layer. Therefore, the sensor device was not exposed to the high sintering temperature. The SnO2 gas sensor fabricated by the transfer process exhibited a rectangular sensing curve behavior with a rapid response of 52 s at 20 ppm ethanol concentration. In addition, reliable and repeatable sensing characteristics were obtained even at an ethanol gas concentration of 5 ppm.

Inkjet?Printed Cu2ZnSn(S, Se)4 Solar Cells

OpenAIRE

Lin, Xianzhong; Kavalakkatt, Jaison; Lux?Steiner, Martha Ch.; Ennaoui, Ahmed

2015-01-01

Cu2ZnSn(S, Se)4?based solar cells with total area (0.5 cm2) power conversion efficiency of 6.4% are demonstrated from thin film absorbers processed by inkjet printing technology of Cu?Zn?Sn?S precursor ink followed by selenization. The device performance is limited by the low fill factor, which is due to the high series resistance.

Inkjet-Printed Cu2ZnSn(S, Se)4 Solar Cells.

Science.gov (United States)

Lin, Xianzhong; Kavalakkatt, Jaison; Lux-Steiner, Martha Ch; Ennaoui, Ahmed

2015-06-01

Cu 2 ZnSn(S, Se) 4 -based solar cells with total area (0.5 cm 2 ) power conversion efficiency of 6.4% are demonstrated from thin film absorbers processed by inkjet printing technology of Cu-Zn-Sn-S precursor ink followed by selenization. The device performance is limited by the low fill factor, which is due to the high series resistance.

Phase transition temperatures of Sn-Zn-Al system and their comparison with calculated phase diagrams

Czech Academy of Sciences Publication Activity Database

Smetana, B.; Zlá, S.; Kroupa, Aleš; Žaludová, M.; Drápala, J.; Burkovič, R.; Petlák, D.

2012-01-01

Roč. 110, č. 1 (2012), s. 369-378 ISSN 1388-6150 R&D Projects: GA MŠk(CZ) OC08053 Institutional support: RVO:68081723 Keywords : Sn-Zn-Al system * DTA * phase transition temperatures Subject RIV: BJ - Thermodynamics Impact factor: 1.982, year: 2012

Phase Transitions in CsSnCl3 and CsPbBr3 An NMR and NQR Study

Science.gov (United States)

Sharma, Surendra; Weiden, Norbert; Weiss, Alarich

1991-04-01

The phase transitions in CsSnCl3 and CsPbBr3 have been studied by X-ray powder diffraction, by 81Br-NQR and by 'H-, 119Sn-, and 113Cs-NMR. At room temperature in air CsSnCl3 forms a hydrate which can be dehydrated to the monoclinic phase II of CsSnCl3. The high temperature phase I has the Perovskite structure, as the X-ray and NMR experiments show. The three phases of CsPbBr3, known from literature, have been corroborated. The results are discussed in the framework of the group ABX3, A = alkalimetal ion, B = IV main group ion, and X = Halogen ion

Synthesis and characterisation of Cu{sub 2}ZnSnSe{sub 4} thin films prepared via a vacuum evaporation-based route

Energy Technology Data Exchange (ETDEWEB)

Volobujeva, O., E-mail: v.olga@staff.ttu.ee; Bereznev, S.; Raudoja, J.; Otto, K.; Pilvet, M.; Mellikov, E.

2013-05-01

Different sequentially stacked binary chalcogenide layers (CuSe, ZnSe, and SnSe) deposited by vacuum evaporation onto molybdenum covered soda-lime glass substrates were used as precursors to form Cu{sub 2}ZnSnSe{sub 4} films. The influence of the stacked binary layer sequence, substrate temperature, both the duration and speed of deposition and the post deposition treatment atmosphere on the structural and the morphological parameters of the Cu{sub 2}ZnSnSe{sub 4} thin films was studied. Our results indicate the possibility of replacing the Se{sub 2} selenisation with a thermal treatment in an SnSe{sub 2} atmosphere to avoid the selenisation of the Mo substrate and MoSe{sub 2} formation. This SnSe{sub 2} treatment forms p-type Cu{sub 2}ZnSnSe{sub 4} films with an optical band-gap of 1.14 eV and a solar cell structure with an efficiency of up to 3%. - Highlights: ► Cu{sub 2}ZnSnSe{sub 4} thin films were grown using binary precursors and selenisation. ► Composition and morphology were studied in dependence of selenisation atmosphere. ► The use of SnSe{sub 2} selenisation allows to avoid Mo substrate selenisation. ► The high quality of films is indicated by the value of their E{sub g} = 1.14 eV. ► Cu{sub 2}ZnSnSe{sub 4} thin films were in p-type conductivity and were realized as solar cells.

Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell

Directory of Open Access Journals (Sweden)

I. Saurdi

2014-01-01

Full Text Available Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm, high average transmittance (96% in visible region, and good resistivity 7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.

Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration

Science.gov (United States)

Uchitomi, Naotaka; Hidaka, Shiro; Saito, Shin; Asubar, Joel T.; Toyota, Hideyuki

2018-04-01

The relationship between Mn concentration and Curie temperature (TC) is studied for Mn-doped ZnSnAs2 ferromagnetic semiconductors, epitaxially grown on InP substrates by molecular beam epitaxy. In the ferromagnetic phase, Mn distributions in a (Zn,Mn,Sn)As2 thin film with 7.2 cation percent (cat. %) Mn are investigated using three-dimensional atom probe tomography. The results indicate an inhomogeneous distribution which spreads to a relatively high Mn concentration of 9.0 at. % (at. %). In the paramagnetic phase, it is found that the paramagnetic to ferromagnetic transition takes place sharply with a TC of 334 K when the Mn doping concentration increases to about 4 cat. % Mn, which corresponds to a magnetic percolation threshold for ferromagnetism in (Zn,Mn,Sn)As2. An effective Curie temperature ⟨TC⟩ is considered to bridge the Curie temperatures obtained experimentally to those calculated theoretically in inhomogeneous magnetic semiconductors. The behavior of magnetism in Mn-doped ZnSnAs2 can be explained by three different phases within the present framework.

Cd-free buffer layer materials on Cu2ZnSn(SxSe1-x)4: Band alignments with ZnO, ZnS, and In2S3

Science.gov (United States)

Barkhouse, D. Aaron R.; Haight, Richard; Sakai, Noriyuki; Hiroi, Homare; Sugimoto, Hiroki; Mitzi, David B.

2012-05-01

The heterojunctions formed between Cu2ZnSn(SxSe1-x)4 (CZTSSe) and three Cd-free n-type buffers, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission and photovoltage spectroscopy. The electronic properties including the Fermi level location at the interface, band bending in the CZTSSe substrate, and valence and conduction band offsets were determined and correlated with device properties. We also describe a method for determining the band bending in the buffer layer and demonstrate this for the In2S3/CZTSSe system. The chemical bath deposited In2S3 buffer is found to have near optimal conduction band offset (0.15 eV), enabling the demonstration of Cd-free In2S3/CZTSSe solar cells with 7.6% power conversion efficiency.

First-principles calculations of vacancy formation in In-free photovoltaic semiconductor Cu2ZnSnSe4

International Nuclear Information System (INIS)

Maeda, Tsuyoshi; Nakamura, Satoshi; Wada, Takahiro

2011-01-01

To quantitatively evaluate the formation energies of Cu, Zn, Sn, and Se vacancies in kesterite-type Cu 2 ZnSnSe 4 (CZTSe), first-principles pseudopotential calculations using plane-wave basis functions were performed. The formation energies of neutral Cu, Zn, Sn and Se vacancies were calculated as a function of the atomic chemical potentials of constituent elements. The obtained results were as follows: (1) the formation energy of Cu vacancy was generally smaller than those of the other Zn, Sn and Se vacancies, (2) under the Cu-poor and Zn-rich condition, the formation energy of Cu vacancy was particularly low, (3) the formation energy of Zn vacancy greatly depended on the chemical potentials of the constituent elements and under the Zn-poor and Se-rich condition, the formation energy of Zn vacancy was smaller than that of Cu vacancy, and (4) the formation energy of Sn vacancy did not greatly depend on the chemical potentials of the constituent elements and was much larger than those of Cu, Zn, and Se vacancies. These results indicate that Cu vacancy is easily formed under Cu-poor and Zn-rich conditions, but Zn vacancy is easily formed under the Zn-poor and Se-rich conditions.

Corrosion Behaviour of Sn-based Lead-Free Solders in Acidic Solution

Science.gov (United States)

Nordarina, J.; Mohd, H. Z.; Ahmad, A. M.; Muhammad, F. M. N.

2018-03-01

The corrosion properties of Sn-9(5Al-Zn), Sn-Cu and SAC305 were studied via potentiodynamic polarization method in an acidic solution of 1 M hydrochloric acid (HCl). Sn-9(5Al-Zn) produced different polarization profile compared with Sn-Cu and SAC305. The morphological analysis showed that small, deep grooves shaped of corrosion product formed on top of Sn-9(5Al-Zn) solder while two distinctive structures of closely packed and loosely packed corrosion product formed on top of Sn-Cu and SAC305 solder alloys. Phase analysis revealed the formations of various corrosion products such as SnO and SnO2 mainly dominant on surface of solder alloys after potentiodynamic polarization in 1 M hydrochloric acid (HCl).

Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurization of co-electroplated Cu-Zn-Sn precursors

Energy Technology Data Exchange (ETDEWEB)

Araki, Hideaki; Kubo, Yuki; Jimbo, Kazuo; Maw, Win Shwe; Katagiri, Hironori; Yamazaki, Makoto; Oishi, Koichiro; Takeuchi, Akiko [Nagaoka National College of Technology, 888 Nishikatakai, Nagaoka, Niigata 940-8532 (Japan)

2009-05-15

Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were prepared by sulfurization of electrodeposited Cu-Zn-Sn precursors. The Cu-Zn-Sn precursors were deposited on Mo-coated glass substrates in a one-step process from an electrolyte containing copper (II) sulfate pentahydrate, zinc sulfate heptahydrate, tin (II) chloride dehydrate and tri-sodium citrate dehydrate. The precursors were sulfurized by annealing with sulfur at temperatures of 580 C and 600 C in an N{sub 2} atmosphere. X-ray diffraction peaks attributable to CZTS were detected in the sulfurized films. Photovoltaic cells with the structure glass/Mo/CZTS/ CdS/ZnO:Al/Al were fabricated using the CZTS films by sulfurizing the electrodeposited precursors. The best photovoltaic cell performance was obtained with Zn-rich samples. An open-circuit voltage of 540 mV, a short-circuit current of 12.6 mA/cm{sup 2} and an efficiency of 3.16% were achieved. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Comparison of electrochemical performance of as-cast Pb-1 wt.% Sn and Pb-1 wt.% Sb alloys for lead-acid battery components

Energy Technology Data Exchange (ETDEWEB)

Osorio, Wislei R.; Peixoto, Leandro C.; Garcia, Amauri [Department of Materials Engineering, University of Campinas - UNICAMP, PO Box 612, 13083-970 Campinas, SP (Brazil)

2010-03-15

A comparative experimental study of the electrochemical features of as-cast Pb-1 wt.% Sn and Pb-1 wt.% Sb alloys is carried out with a view to applications in the manufacture of lead-acid battery components. The as-cast samples are obtained using a water-cooled unidirectional solidification system. Pb-Sn and Pb-Sb alloy samples having similar coarse cell arrays are subjected to corrosion tests in order to assess the effect of Sn or Sb segregation in the cell boundary on the electrochemical performance. Electrochemical impedance spectroscopy (EIS) diagrams, potentiodynamic polarization curves and an equivalent circuit analysis are used to evaluate the electrochemical parameters in a 0.5 M H{sub 2}SO{sub 4} solution at 25 C. Both the experimental and simulated EIS parameters evidence different kinetics of corrosion. The Pb-1 wt.% Sn alloy is found to have a current density which is of about three times lower than that of the Pb-1 wt.% Sb alloy which indicates that dilute Pb-Sn alloys have higher potential for application as positive grid material in maintenance-free Pb-acid batteries. (author)

The crystallisation of Cu2ZnSnS4 thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

International Nuclear Information System (INIS)

Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.; Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Koetschau, I.; Schock, H.-W.

2009-01-01

The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu 2 ZnSnS 4 based thin film solar cells. A kesterite based solar cell (size 0.5 cm 2 ) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu 2 SnS 3 and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu 3 Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu 6 Sn 5 and Sn phases were detected. The formation mechanism of Cu 2 SnS 3 involves the binary sulphides Cu 2-x S and SnS 2 in the absence of the binary precursor phase Cu 6 Sn 5 . The presence of Cu 6 Sn 5 leads to a preferred formation of Cu 2 SnS 3 via the reaction educts Cu 2-x S and SnS 2 in the presence of a SnS 2 (Cu 4 SnS 6 ) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase

Gas sensing properties of zinc stannate (Zn{sub 2}SnO{sub 4}) nanowires prepared by carbon assisted thermal evaporation process

Energy Technology Data Exchange (ETDEWEB)

Tharsika, T., E-mail: tharsika@siswa.um.edu.my [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Haseeb, A.S.M.A., E-mail: haseeb@um.edu.my [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Akbar, S.A., E-mail: akbar.1@osu.edu [Center for Industrial Sensors and Measurements (CISM), Department of Materials Science and Engineering, Ohio State University, 2041 College Road, Columbus, OH 43210 (United States); Sabri, M.F.M., E-mail: faizul@um.edu.my [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Wong, Y.H., E-mail: yhwong@um.edu.my [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia)

2015-01-05

Highlights: • Zn{sub 2}SnO{sub 4} nanowires are grown on Au/alumina substrate by a carbon assisted thermal evaporation process. • Optimum growth conditions for Zn{sub 2}SnO{sub 4} nanowires are determined. • Ethanol gas is selectively sensed with high sensitivity. - Abstract: Zn{sub 2}SnO{sub 4} nanowires are successfully synthesized by a carbon assisted thermal evaporation process with the help of a gold catalyst under ambient pressure. The as-synthesized nanowires are characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM) equipped with an energy dispersive X-ray spectroscopy (EDS). The XRD patterns and elemental mapping via TEM–EDS clearly indicate that the nanowires are Zn{sub 2}SnO{sub 4} with face centered spinel structure. HRTEM image confirms that Zn{sub 2}SnO{sub 4} nanowires are single crystalline with an interplanar spacing of 0.26 nm, which is ascribed to the d-spacing of (3 1 1) planes of Zn{sub 2}SnO{sub 4}. The optimum processing condition and a possible formation mechanism of these Zn{sub 2}SnO{sub 4} nanowires are discussed. Additionally, sensor performance of Zn{sub 2}SnO{sub 4} nanowires based sensor is studied for various test gases such as ethanol, methane and hydrogen. The results reveal that Zn{sub 2}SnO{sub 4} nanowires exhibit excellent sensitivity and selectivity toward ethanol with quick response and recovery times. The response of the Zn{sub 2}SnO{sub 4} nanowires based sensors to 50 ppm ethanol at an optimum operating temperature of 500 °C is about 21.6 with response and recovery times of about 116 s and 182 s, respectively.

LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System

Science.gov (United States)

Tang, Y. K.; Hsu, Y. C.; Lin, E. J.; Hu, Y. J.; Liu, C. Y.

2016-12-01

In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.

Preparation, deformation, and failure of functional Al-Sn and Al-Sn-Pb nanocrystalline alloys

Science.gov (United States)

Noskova, N. I.; Vil'Danova, N. F.; Filippov, Yu. I.; Churbaev, R. V.; Pereturina, I. A.; Korshunov, L. G.; Korznikov, A. V.

2006-12-01

Changes in the structure, hardness, mechanical properties, and friction coefficient of Al-30% Sn, Al-15% Sn-25% Pb, and Al-5% Sn-35% Pb (wt %) alloys subjected to severe plastic deformation by equal-channel angular pressing (with a force of 40 tonne) and by shear at a pressure of 5 GPa have been studied. The transition into the nanocrystalline state was shown to occur at different degrees of plastic deformation. The hardness exhibits nonmonotonic variations, namely, first it increases and subsequently decreases. The friction coefficient of the Al-30% Sn, Al-15% Sn-25% Pb, and Al-5% Sn-35% Pb alloys quenched from the melt was found to be 0.33; the friction coefficients of these alloys in the submicrocrystalline state (after equal-channel angular pressing) equal 0.24, 0.32, and 0.35, respectively. The effect of disintegration into nano-sized powders was found to occur in the Al-15% Sn-25% Pb, and Al-5% Sn-35% Pb alloys after severe plastic deformation to ɛ = 6.4 and subsequent short-time holding.

Surface properties and dye loading behavior of Zn{sub 2}SnO{sub 4} nanoparticles hydrothermally synthesized using different mineralizers

Energy Technology Data Exchange (ETDEWEB)

Annamalai, Alagappan; Eo, Yang Dam [Department of Advanced Technology Fusion, Konkuk University, 1 Hwayang-dong, Kwangjin-gu, Seoul 143-701 (Korea, Republic of); Im, Chan [Department of Chemistry, Konkuk University, 1 Hwayang-dong, Kwangjin-gu, Seoul 143-701 (Korea, Republic of); Lee, Man-Jong, E-mail: leemtx@konkuk.ac.kr [Department of Advanced Technology Fusion, Konkuk University, 1 Hwayang-dong, Kwangjin-gu, Seoul 143-701 (Korea, Republic of)

2011-10-15

We present for the first time the influence of different mineralizers on the isoelectric point (IEP) of zinc stannate (Zn{sub 2}SnO{sub 4}) nanoparticles hydrothermally prepared using three different mineralizers, viz., Na{sub 2}CO{sub 3}, KOH and tert-butyl amine, and the effect of the IEPs on the dye loading behavior of Zn{sub 2}SnO{sub 4} based photoelectrodes in dye sensitized solar cells (DSSCs). To produce highly crystalline, uniform sized Zn{sub 2}SnO{sub 4} nanoparticles, hydrothermal processing parameters, such as reaction temperature, time, and the mineralizers used have been critically adjusted. The structural and morphological features of the as-synthesized Zn{sub 2}SnO{sub 4} nanoparticles have been observed using both scanning and transmission electron microscopy. For the surface state characterization of shape- and size-controlled Zn{sub 2}SnO{sub 4} nanoparticles, the IEPs of Zn{sub 2}SnO{sub 4} surfaces were determined through zeta potential measurements. The IEPs were found to be 5.7, 7.4 and 8.1 for Zn{sub 2}SnO{sub 4} nanoparticles formed using Na{sub 2}CO{sub 3}, KOH and tert-butyl amine, respectively, suggesting that the surface properties of Zn{sub 2}SnO{sub 4} nanoparticles can be manipulated through the choice of the mineralizers used during the hydrothermal reaction. The amount of N719 dye loading on the surfaces of Zn{sub 2}SnO{sub 4} electrodes having different IEPs was also evaluated. It was revealed that the higher the IEP, the higher the dye loading amount, which means that the IEP mainly affects the dye loading at the dye-metal oxide interface. - Highlights: {yields} The effect of various mineralizers on the isoelectric point of Zn{sub 2}SnO{sub 4} was discussed. {yields} The IEP of Zn{sub 2}SnO{sub 4} can be modified by the choice of mineralizer. {yields} Change in IEP affects the surface properties and the morphology of Zn{sub 2}SnO{sub 4} particles. {yields} Modified surface affects the N719 dye loading behaviour of the Zn{sub 2

Some physico-chemical properties of liquid Ag-Sn-Zn

International Nuclear Information System (INIS)

Terzieff, P.

2010-01-01

The mean square concentration fluctuations in the long wavelength limit, the surface tension, the segregation behavior and the viscosity of the liquid system Ag-Sn-Zn are calculated in a semi-empirical manner based on experimental thermodynamic data. The increased intensity of fluctuations in the concentration of Sn extending over an wide range of composition is the dominant feature of the system. In a likewise manner, the tendency of segregation into the surface layer is observed to be most noticeable for Sn-atoms. As a consequence, even at massive additions of Ag or Zn up to 60 at% the surface tension is expected not to exceed the value of pure Sn by more than 15%. The viscosities are indicated to increase markedly but in a non-linear manner with the content of Ag. The excess viscosity is found to be negative throughout the system being more pronounced on the Ag-Sn side than on the Ag-Zn or the Sn-Zn side of the system.

Effect of various SnO2 pH on ZnO/SnO2-composite film via immersion technique

Science.gov (United States)

Malek, M. F.; Mohamed, R.; Mamat, M. H.; Ismail, A. S.; Yusoff, M. M.; Rusop, M.

2018-05-01

ZnO/SnO2-composite film has been synthesized via immersion technique with various pH of SnO2. The pH of SnO2 were varied between 4.5 and 6.5. The optical measurements of the samples were carried out using Varian Cary 5000 UV-Vis spectrophotometer within the range from 350 nm to 800 nm at room temperature in air with a data interval of 1 nm. On the other hand, the optical photoluminescence properties were measured by a photoluminescence spectrometer (PL, model: Horiba Jobin Yvon - 79 DU420A-OE-325) using a He-Cd laser as the excitation source at 325 nm. These highly oriented ZnO/SnO2-composite film are potential for the creation of functional materials, such as the sensors, solar cells and etc.

Interactions of Cu-substrates with titanium-alloyed Sn-Zn solders

Directory of Open Access Journals (Sweden)

Soares D.

2006-01-01

Full Text Available The interactions of copper substrate with titanium-alloyed Sn-Zn eutectic solders have been studied. Two series of experiments have been performed. The first one consisted in differential thermal analyses of Sn-Zn nearly eutectic alloys containing from 1.3 to 2.2 wt. % Ti. Diffusion couples consisted of Cu-wires and Sn-Zn-Ti liquid solders, produced at 250 and 275 OC have been prepared in the second series,. The contact times were up to 3600 s. The contact zones have been characterized by optical and scanning electron microscope. Two layers have been found along the interfaces solid/liquid. The first and the second layers are identical, respectively, with γ and ε phases of the Cu-Zn system. No changes of the chemical compositions were detected for the tested temperatures and reaction times. Continuous parabolic growth of the total diffusion zone thickness with the time of diffusion is observed. The growth is due mainly to one the formed layers (γ while the thickness of the ε-phase layer, stays almost constant for all tested diffusion times and temperatures.

Zn{sub 2}SnO{sub 4}-SnO{sub 2} heterojunction nanocomposites for dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Li Bihui; Luo Lijuan; Xiao Ting; Hu Xiaoyan [Institute of Nano-science and Technology, Central China Normal University, Wuhan, 430079 (China); Lu Lu; Wang, Jianbo [Department of Physics, Wuhan University, Wuhan 430072 (China); Tang Yiwen, E-mail: ywtang@phy.ccnu.edu.cn [Institute of Nano-science and Technology, Central China Normal University, Wuhan, 430079 (China)

2011-02-03

Graphical abstract: Display Omitted Research highlights: > The ZTO-SnO{sub 2} based DSSC shows superior photovoltaic performance than single phase ZTO or Pm-ZTO-SnO{sub 2} (physical mixture of ZTO and SnO{sub 2} nanoparticles having the same ZTO/SnO{sub 2} composition) based DSSC. > The obvious improvement in the photovoltaic performance is mainly ascribed to the efficient injected electrons transfer between the two materials via heterojunctions and consequent suppress the recombination. - Abstract: Zn{sub 2}SnO{sub 4}-SnO{sub 2} heterojunction nanocomposites (ZTO-SnO{sub 2}) with high mass amount of ZTO were synthesized by a two-step technique. The route involves firstly the synthesis of monodispersed ZnSn(OH){sub 6} nanocubes with a 50-60 nm edge length as precursors by simple coprecipitation of Na{sub 2}SnO{sub 3}.3H{sub 2}O and ZnCl{sub 2} aqueous solution, assisted by ultrasonic treatment and then followed by calcination of the precursors at 800 deg. C under N{sub 2} atmosphere. The as-synthesized nanoparticles were characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Heterojunction between ZTO and SnO{sub 2} nanoparticle was confirmed by the electron energy loss spectroscopy (EELS) elemental mapping and high-resolution TEM (HRTEM). The photovoltaic performance of the ZTO-SnO{sub 2} based DSSC was examined by measuring the J-V curves both in dark and under illumination. The results show that the ZTO-SnO{sub 2} based DSSC exhibits superior photovoltaic performance as compared to the single phase ZTO based DSSCs. Under illumination of AM 1.5 simulated sunlight (100 mW/cm{sup 2}), the open circuit voltage of the cell based on ZTO-SnO{sub 2} is 706 mV, the short-current density is 2.85 mA/cm{sup 2}, and the efficiency is 1.29% which is increased by 43% from 0.90% to 1.29% compared with pure ZTO. The formation of the heterojunctions between ZTO and SnO{sub 2} nanoparticles is believed to reduce

Interface band gap narrowing behind open circuit voltage losses in Cu2ZnSnS4 solar cells

DEFF Research Database (Denmark)

Crovetto, Andrea; Palsgaard, Mattias Lau Nøhr; Gunst, Tue

2017-01-01

We present evidence that bandgap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu2ZnSnS4/CdS solar cells. Bandgap narrowing is caused by surface states that extend the Cu2ZnSnS4valence band into the forbidden gap. Those surface states...... are consistently found in Cu2ZnSnS4, but not in Cu2ZnSnSe4, by first-principles calculations. They do not simply arise from defects at surfaces but are an intrinsic feature of Cu2ZnSnS4 surfaces. By including those states in a device model, the outcome of previously published temperature-dependent open circuit...... voltage measurements on Cu2ZnSnS4 solar cells can be reproduced quantitatively without necessarily assuming a cliff-like conduction band offset with the CdS buffer layer. Our first-principles calculations indicate that Zn-based alternative buffer layers are advantageous due to the ability of...

Structural and optical properties of ZnO–SnO{sub 2} mixed thin films deposited by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Tharsika, T., E-mail: tharsika@siswa.um.edu.my; Haseeb, A.S.M.A., E-mail: haseeb@um.edu.my; Sabri, M.F.M., E-mail: faizul@um.edu.my

2014-05-02

Nanocrystalline ZnO–SnO{sub 2} mixed thin films were deposited by the spray pyrolysis technique at various substrate temperatures during deposition. The mixed films were prepared in the range of 20.9 at.% to 73.4 at.% by altering the Zn/(Sn + Zn) atomic ratio in the starting solution. Morphology, crystal structures, and optical properties of the films were characterized by field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and ultraviolet–visible and photoluminescence (PL) spectroscopy. XRD analysis reveals that the crystallinity of the Sn-rich mixed thin films increases with increasing substrate temperatures. FESEM images show that the grain size of mixed thin films is smaller compared to that of pure ZnO and SnO{sub 2} thin films. A drop in the thickness and optical bandgap of the film was observed for films fabricated at high temperatures, which coincided with the increased crystallinity of the films. The average optical transmission of mixed thin films increased from 70% to 95% within the visible range (400–800 nm) as the substrate temperature increases. Optical bandgap of the films was determined to be in the range of 3.21–3.96 eV. The blue shift in the PL spectra from the films was supported by the fact that grain size of the mixed thin films is much smaller than that of the pure ZnO and SnO{sub 2} thin films. Due to the improved transmission and reduced grain size, the ZnO–SnO{sub 2} mixed thin films can have potential use in photovoltaic and gas sensing applications. - Highlights: • ZnO–SnO{sub 2} mixed thin films were deposited on glass substrate by spray pyrolysis. • Crystallinity of the thin films increases with substrate temperature. • Grain size of the mixed thin films is smaller than that of the pure thin films. • Reduction of grain size depends on mixed atomic ratios of precursor solution. • Optical band gap of films could be engineered by changing substrate temperature.

Double-heterostructure PbSnTe lasers grown by molecular-beam epitaxy with cw operation up to 114 K

International Nuclear Information System (INIS)

Walpole, J.N.; Calawa, A.R.; Harman, T.C.; Groves, S.H.

1976-01-01

Double-heterostructure Pb/sub 1-x/Sn/sub x/Te lasers with active regions of Pb 0 . 782 Sn 0 . 218 Te have been grown by molecular-beam epitaxy which operate cw up to heat-sink temperatures of 114 0 K. Temperature tuning of the emission from 15.9 to 8.54 μm wavelength is obtained, with emission at 77 0 K near 11.5 μm. The current-voltage characteristics show an abrupt change in slope at threshold, indicating high incremental internal quantum efficiency

Surface tension and density of liquid In-Sn-Zn alloys

Science.gov (United States)

Pstruś, Janusz

2013-01-01

Using the dilatometric method, measurements of the density of liquid alloys of the ternary system In-Sn-Zn in four sections with a constant ratio Sn:In = 24:1, 3:1, 1:1, 1:3, for various Zn additions (5, 10, 14, 20, 3 5, 50 and 75 at.% Zn) were performed at the temperature ranges of 500-1150 K. Density decreases linearly for all compositions. The molar volume calculated from density data exhibits close to ideal dependence on composition. Measurements of the surface tension of liquid alloys have been conducted using the method of maximum pressure in the gas bubbles. There were observed linear dependences on temperature with a negative gradients dσ/dT. Generally, with two exceptions, there was observed the increase of surface tension with increasing content of zinc. Using the Butler's model, the surface tension isotherms were calculated for temperatures T = 673 and 1073 K. Calculations show that only for high temperatures and for low content of zinc (up to about 35 at.%), the modeling is in very good agreement with experiment. Using the mentioned model, the composition of the surface phase was defined at two temperatures T = 673 and 973 K. Regardless of the temperature and of the defined section, the composition of the bulk is very different in comparison with the composition of the surface.

Gas Sensing Properties of ZnO-SnO2 Nanostructures.

Science.gov (United States)

Chen, Weigen; Li, Qianzhu; Xu, Lingna; Zeng, Wen

2015-02-01

One-dimensional (1D) semiconductor metal oxide nanostructures have attracted increasing attention in electrochemistry, optics, magnetic, and gas sensing fields for the good properties. N-type low dimensional semiconducting oxides such as SnO2 and ZnO have been known for the detection of inflammable or toxic gases. In this paper, we fabricated the ZnO-SnO2 and SnO2 nanoparticles by hydrothermal synthesis. Microstructure characterization was performed using X-ray diffraction (XRD) and surface morphologies for both the pristine and doped samples were observed using field emission scanning electron microscope (FESEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Then we made thin film gas sensor to study the gas sensing properties of ZnO-SnO2 and SnO2 gas sensor to H2 and CO. A systematic comparison study reveals an enhanced gas sensing performance for the sensor made of SnO2 and ZnO toward H2 and CO over that of the commonly applied undecorated SnO2 nanoparticles. The improved gas sensing properties are attributed to the size of grains and pronounced electron transfer between the compound nanostructures and the absorbed oxygen species as well as to the heterojunctions of the ZnO nanoparticles to the SnO2 nanoparticles, which provide additional reaction rooms. The results represent an advance of compound nanostructures in further enhancing the functionality of gas sensors, and this facile method could be applicable to many sensing materials, offering a new avenue and direction to detect gases of interest based on composite tin oxide nanoparticles.

Effects of hydrazine on the solvothermal synthesis of Cu{sub 2}ZnSnSe{sub 4} and Cu{sub 2}CdSnSe{sub 4} nanocrystals for particle-based deposition of films

Energy Technology Data Exchange (ETDEWEB)

Chiang, Ming-Hung [Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701 (China); Fu, Yaw-Shyan, E-mail: ysfu@mail.nutn.edu.tw [Department of Greenergy, National University of Tainan, Tainan, Taiwan 700 (China); Shih, Cheng-Hung; Kuo, Chun-Cheng [Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701 (China); Guo, Tzung-Fang [Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan 701 (China); Lin, Wen-Tai, E-mail: wtlin@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701 (China)

2013-10-01

The effects of hydrazine on the synthesis of Cu{sub 2}ZnSnSe{sub 4} (CZTSe) and Cu{sub 2}CdSnSe{sub 4} (CCTSe) nanocrystals in an autoclave as a function of temperature and time were explored. On heating at 190 °C for 24-72 h, pure CZTSe and CCTSe nanocrystals could readily grow in the hydrazine-added solution, while in the hydrazine-free solution the intermediate phases such as ZnSe, Cu{sub 2}Se, and Cu{sub 2}SnSe{sub 3}, and Cu{sub 2}SnSe{sub 3} and CdSe associated with the CZTSe and CCTSe nanocrystals grew, respectively. This result reveals that hydrazine can speed up the synthesis of pure CZTSe and CCTSe nanocrystals via a solvothermal process. The mechanisms for the hydrazine-enhanced growth of CZTSe and CCTSe nanocrystals were discussed. The pure CZTSe and CCTSe nanocrystals were subsequently fabricated to the smooth films by spin coating without further annealing in selenium atmosphere. This processing may be beneficial to the fabrication of the absorber layer for solar cells and thermoelectric devices. - Highlights: • Hydrazine enhances the growth of pure Cu{sub 2}ZnSnSe{sub 4} and Cu{sub 2}CdSnSe{sub 4} nanocrystals. • The nanocrystals can be fabricated to films by spin coating without annealing. • This solvothermal processing is promising for the fabrication of thin film devices.

Chemical bath deposited PbS thin films on ZnO nanowires for photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Gertman, Ronen [Dept of Chemistry, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Osherov, Anna; Golan, Yuval [Dept of Materials Engineering, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Visoly-Fisher, Iris, E-mail: irisvf@bgu.ac.il [Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Department of Solar Energy and Environmental Physics, Swiss Institute for Dryland Environmental and Energy Research, Jacob Blaustein Institutes for Desert Research, Ben Gurion University of the Negev, Sede Boqer Campus 84990 (Israel)

2014-01-01

Photovoltaic devices usually exploit mid-range band-gap semiconductors which absorb in the visible range of the solar spectrum. However, much energy is lost in the IR and near-IR range. We combined the advantages of small band-gap, bulk-like PbS deposited by facile, cheap and direct chemical bath deposition (CBD), with the good electronic properties of ZnO and the large surface area of nanowires, towards low cost photovoltaic devices utilizing IR and near-IR light. Surprisingly, CBD of PbS on ZnO, and particularly on ZnO nanowires, was not studied hitherto. Therefore, the mechanism of PbS growth by chemical bath deposition on ZnO nanowires was studied in details. A visible proof is shown for a growth mechanism starting from amorphous Pb(OH){sub 2} layer, that evolved into the ‘ion-by-ion’ growth mechanism. The growth mechanism and the resulting morphology at low temperatures were controlled by the thiourea concentration. The grain size affected the magnitude of the band-gap and was controlled by the deposition temperatures. Deposition above 40 °C resulted in bulk-like PbS with an optical band-gap of 0.4 eV. Methods were demonstrated for achieving complete PbS coverage of the complex ZnO NW architecture, a crucial requirement in optoelectronic devices to prevent shorts. Measurements of photocurrents under white and near-IR (784 nm) illumination showed that despite a 200 meV barrier for electron transfer at the PbS/ZnO interface, extraction of photo-electrons from PbS to the ZnO was feasible. The ability to harvest electrons from a narrow band-gap semiconductor deposited on a large surface-area electrode can advance the field towards high efficiency, low cost IR and near-IR sensors and third generation solar cells. - Highlights: • PbS was deposited on ZnO nanowires using chemical bath deposition. • At 50 °C the growth mechanism starts from an amorphous Pb(OH){sub 2} layer. • At 5 °C the growth mechanism of PbS can be controlled by thiourea concentrations

The crystallisation of Cu{sub 2}ZnSnS{sub 4} thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

Energy Technology Data Exchange (ETDEWEB)

Schurr, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany)], E-mail: schurr@krist.uni-erlangen.de; Hoelzing, A.; Jost, S.; Hock, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany); Voss, T.; Schulze, J.; Kirbs, A. [Atotech Deutschland GmbH, Erasmusstrasse 20, D-10553 Berlin (Germany); Ennaoui, A.; Lux-Steiner, M. [Heterogeneous Material Systems SE II, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany); Weber, A.; Koetschau, I.; Schock, H.-W. [Technology SE III, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany)

2009-02-02

The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu{sub 2}ZnSnS{sub 4} based thin film solar cells. A kesterite based solar cell (size 0.5 cm{sup 2}) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu{sub 2}SnS{sub 3} and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu{sub 3}Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu{sub 6}Sn{sub 5} and Sn phases were detected. The formation mechanism of Cu{sub 2}SnS{sub 3} involves the binary sulphides Cu{sub 2-x}S and SnS{sub 2} in the absence of the binary precursor phase Cu{sub 6}Sn{sub 5}. The presence of Cu{sub 6}Sn{sub 5} leads to a preferred formation of Cu{sub 2}SnS{sub 3} via the reaction educts Cu{sub 2-x}S and SnS{sub 2} in the presence of a SnS{sub 2}(Cu{sub 4}SnS{sub 6}) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase.

Theoretical perspective on the electronic, magnetic and optical properties of Zn-doped monolayer SnS{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Sun, Lili; Zhou, Wei; Liu, Yanyu; Yu, Dandan [Department of Applied Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072 (China); Liang, Yinghua [College of Chemical Engineering, North China University of Science and Technology, Tangshan 063009 (China); Wu, Ping, E-mail: pingwu@tju.edu.cn [Department of Applied Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072 (China)

2016-12-15

Highlights: • The Zn doping in monolayer SnS{sub 2} is energetically favored under S-rich condition. • The room temperature ferromagnetism can be realized in Zn-doped monolayer SnS{sub 2}. • The Zn doping enhances the effective utilization in the near-infrared light region. • The Zn doping could lead to the red shift of absorption edge in monolayer SnS{sub 2}. • The Zn-doped monolayer SnS{sub 2} is active for both the oxygen and hydrogen evolution. - Abstract: The electronic, magnetic and optical properties of Zn-doped monolayer SnS{sub 2} have been theoretically investigated with the density functional theory. Numerical results reveal that monolayer SnS{sub 2} can be easily synthesized by cleaving its bulk crystal. Besides, the Zn doping in monolayer SnS{sub 2} is energetically favored under the S-rich with respect to the Sn-rich condition. The doped system exhibits the magnetic ground states due to the formation of defect states above the Fermi level, which are introduced by the hybridization between S-3p states and a small amount of Sn-4d states. The room temperature ferromagnetism can also be realized in Zn-doped monolayer SnS{sub 2}. The injection of Zn can enhance the absorption efficiency of solar spectrum, especially in the near-infrared light region. Moreover, the Zn doping can enhance the photocatalytic activity for both the oxygen and hydrogen evolution reactions in the monolayer SnS{sub 2}.

Phase Equilibria in the Bi-In-Sn-Zn System. Thermal Analysis vs. Calculations

Directory of Open Access Journals (Sweden)

Dębski A.

2017-12-01

Full Text Available With the use of the differential thermal analysis (DTA, studies of the phase transitions were conducted for 90 of alloys from the quaternary Bi-In-Sn-Zn system and for the constant ratio of Bi:In and Bi:Sn. The studies were conducted for the alloys prepared from the purity metals (Bi, In, Sn, Zn = 99.999 mas. % by way of melting in a graphite crucible in a glove-box filled with Ar, in which the impurities level was less than 0.1 ppm. After melting and thorough mixing, the liquid alloys were poured out into a graphite test mold. The phase transition temperature data obtained from the DTA investigations were next confronted with those determined from the calculations based on the binary and ternary optimized thermodynamic parameters available in the literature. It was found that the experimental and the calculated phase transition temperatures were in good agreement.

Obtención y caracterización del polvo de bronce Cu88Sn6,5Zn4Pb1,5 para aplicaciones en cojinetes

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Krivij, Natalia

2000-12-01

Full Text Available The aim of this work is the development of alloyed bronze powder Cu88Sn6,5Zn4Pb1,5 to substitute the material used in the manufacture of bearings with antifriction properties. The physical and chemical characterization of the powder has been carried out and an experimental 2³ design to determine the optimal parameters of the technological process of powder sintering has been used in the specific case of sealed bearing manufacture of the subset shaft-seal of the open cooling compressor.

El trabajo tiene como objetivo el desarrollo del polvo de bronce aleado Cu88Sn6,5Zn4Pb1,5 para sustituir el material originalmente utilizado en la fabricación de cojinetes con propiedades antifricción. Se realizó la caracterización física y química del polvo, y se empleó un diseño experimental 2³ con vistas a determinar los parámetros óptimos del proceso tecnológico de sinterización del polvo, para el caso específico de la fabricación del cojinete de sellaje del subconjunto eje-sello del compresor abierto de refrigeración.

ZnO doped SnO2 nanoparticles heterojunction photo-catalyst for environmental remediation

International Nuclear Information System (INIS)

Lamba, Randeep; Umar, Ahmad; Mehta, S.K.; Kansal, Sushil Kumar

2015-01-01

ZnO doped SnO 2 nanoparticles were synthesized by facile and simple hydrothermal technique and used as an effective photocatalyst for the photocatalytic degradation of harmful and toxic organic dye. The prepared nanoparticles were characterized in detail using different techniques for morphological, structural and optical properties. The characterization results revealed that the synthesized nanoparticles possess both crystal phases of tetragonal rutile phase of pure SnO 2 and wurtzite hexagonal phase of ZnO. In addition, the nanoparticles were synthesized in very high quantity with good crystallinity. The photocatalytic activity of prepared nanoparticles was evaluated by the photocatalytic degradation of methylene blue (MB) dye. Detailed photocatalytic experiments based on the effects of irradiation time, catalyst dose and pH were performed and presented in this paper. The detailed photocatalytic experiments revealed that the synthesized ZnO doped SnO 2 nanoparticles heterojunction photocatalyst exhibit best photocatalytic performance when the catalyst dose was 0.25 g/L and pH = 10. ZnO doped SnO 2 nanoparticles heterojunction photocatalyst was also compared with commercially available TiO 2 (PC-50), TiO 2 (PC-500) and SnO 2 and interestingly ZnO doped SnO 2 nanoparticles exhibited superior photocatalytic performance. The presented work demonstrates that the prepared ZnO doped SnO 2 nanoparticles are promising material for the photocatalytic degradation of organic dyes and toxic chemicals. - Highlights: • Synthesis of well-crystalline ZnO-doped SnO 2 nanoparticles. • Excellent morphological, crystalline and photoluminescent properties. • Efficient environmental remediation using ZnO-doped SnO 2 nanoparticles.

Solvothermal Synthesis of Zn2SnO4 Nanocrystals and Their Photocatalytic Properties

Directory of Open Access Journals (Sweden)

Guang Sun

2014-01-01

Full Text Available Crystalline Zn2SnO4 nanoparticles were successfully synthesized via a simple solvothermal route by using Zn(CH3COO2·2H2O and SnCl4·5H2O as source materials, NaOH as mineralizing agent, and water and ethanol as mixed solvents. The used amount of NaOH was found to have an important influence on the formation of Zn2SnO4. When the molar ratio of OH− : Zn2+ : Sn4+ was set in the range from 4 : 2 : 1 to 8 : 2 : 1, Zn2SnO4 nanoparticles with different shape and size were obtained. However, when the molar ratio of OH− : Zn2+ : Sn4+ was set as 10 : 2 : 1, a mixture phase of ZnO and ZnSn(OH6 instead of Zn2SnO4 was obtained. Photodegradation measurements indicated that the Zn2SnO4 nanoparticles own better photocatalytic property to depredate methyl orange than the Zn2SnO4 nanopolyhedrons. The superior photocatalytic properties of Zn2SnO4 nanoparticles may be contributed to their small crystal size and high surface area.

The influence of high gravity in PbSn eutectic alloy

Energy Technology Data Exchange (ETDEWEB)

Freitas, F.E.; Toledo, R.C.; Poli, A.K.S.; An, C.Y.; Bandeira, I.N., E-mail: filipe.estevao@gmail.com, E-mail: chen@las.inpe.br [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil)

2014-07-01

The study of materials processed in centrifuges improves the understanding of the acceleration influence in the convection behavior in materials processing. This work aims to study the influence of high gravity in PbSn eutectic alloy solidification using a small centrifuge designed and built in the Associate Laboratory of Sensors and Materials of the Brazilian Space Research Institute (LAS/INPE). The samples were analyzed by densitometry and scanning electron microscopy (SEM). (author)

Cu{sub 2}ZnSnS{sub 4} solar cells prepared by sulfurization of sputtered ZnS/Sn/CuS precursors

Energy Technology Data Exchange (ETDEWEB)

Li, Zhi-Shan; Wang, Shu-Rong, E-mail: shrw88@aliyun.com; Jiang, Zhi; Yang, Min; Lu, Yi-Lei; Liu, Si-Jia; Zhao, Qi-Chen; Hao, Rui-Ting

2016-12-01

Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were grown on Mo-coated Soda-lime-glass (SLG) substrates by sulfurization of sputtered ZnS/Sn/CuS precursors at different temperatures i.e. 560 °C, 580 °C and 600 °C. The effects of sulfurization temperature on the quality of CZTS thin films and solar cells were investigated. The crystal structure, surface morphology, chemical composition, phase purity and surface roughness of CZTS thin films fabricated at different sulfurization temperatures were characterized by X Ray Diffraction (XRD), scanning electron microscopy (SEM) equipped with an energy dispersive spectrometer (EDS), Raman spectroscopy and atomic force microscope (AFM), respectively. The results show that all CZTS thin films exhibit a polycrystalline kesterite structure and preferred (112) orientation. For the sulfurization temperature of 580 °C, the obtained CZTS thin films are dense and flat with larger grain size. Meanwhile composition studying indicates that the fabricated CZTS with single phase is copper poor and zinc rich. Furthermore, the surface roughness of CZTS film is the lowest. Finally, the CZTS solar cells with the structure of SLG/Mo/CZTS/CdS/i-ZnO/ITO/Al were fabricated and demonstrated the best power conversion efficiency of 3.59% when used sulfurization temperature was 580 °C.

Distribution and evolution of Zn, Cd, and Pb in Apollo 16 regolith samples and the average U-Pb ages of the parent rocks

Science.gov (United States)

Cirlin, E. H.; Housley, R. M.

1982-01-01

The concentration of surface (low temperature site) and interior (high temperature site) Cd, Zn, and Pb in 13 Apollo 16 highland fines samples, pristine rock 65325, and mare fines sample 75081 were analyzed directly from the thermal release profiles obtained by flameless atomic absorption technique (FLAA). Cd and Zn in pristine ferroan anothosite 65325, anorthositic grains of the most mature fines 65701, and basaltic rock fragments of mare fines 75081 were almost all surface Cd and Zn indicating that most volatiles were deposited on the surfaces of vugs, vesicles and microcracks during the initial cooling process. A considerable amount of interior Cd and Zn was observed in agglutinates. This result suggests that high temperature site interior volatiles originate from entrapment during the lunar maturation processes. Interior Cd found in the most mature fines sample 65701 was only about 15% of the total Cd in the sample. Interior Pb present in Apollo 16 fines samples went up to 60%. From our Cd studies we can assume that this interior Pb in highland fines samples is largely due to the radiogenic decay which occurred after the redistribution of the volatiles took place. We obtained an average age of 4.0 b.y. for the parent rocks of Apollo 16 highland regolith from our interior Pb analyses.

Synthesis and characterization of ZnO/ZnSe NWs/PbS QDs solar cell

Science.gov (United States)

Kamruzzaman, M.; Zapien, J. A.

2017-04-01

The capture of solar energy has gained the attention for the next generation solar cell. ZnO/ZnSe NW arrays were synthesized on an FTO glass substrate using a simple and facile hydrothermal and ion-exchange approaches. The lead sulfide (PbS) QDs was infiltrated into ZnO/ZnSe NWs via SILAR method for making inorganic quantum dot sensitized ZnO/ZnSe/PbS QDs solar cell. The surface morphology, structural, optical, and J-V characteristics have been investigated. The ZnO/ZnSe NW is a core-shell like structure, and the absorption edge shifted from the UV region (ZnO NWs) to the near infrared region for ZnO/ZnSe NWs/PbS QDs. For PbS QDs-sensitized solar cell, the obtained value of η = 1.1%, J sc = 20.60 mA/cm2, V oc = 155 mV, and FF = 34.7%, respectively. The photovoltaic performance of the device in this study is still inferior. However, it is the first report regarding to ZnO/ZnZe NWs/PbS QDs solar cell. The achieving high absorption and large short circuit current density may interest in further improvement of the device performance by suppressing surface defects, optimizing the quality of ZnO/ZnSe NWs and PbS QDs.

Synthesis and characterization of ZnO/ZnSe NWs/PbS QDs solar cell

Energy Technology Data Exchange (ETDEWEB)

Kamruzzaman, M, E-mail: kzaman.phy11@gmail.com; Zapien, J A, E-mail: apjazs@cityu.edu.hk [City University of Hong Kong, Department of Physics and Materials Science and Center Of Super-Diamond and Advanced Films (COSDAF) (China)

2017-04-15

The capture of solar energy has gained the attention for the next generation solar cell. ZnO/ZnSe NW arrays were synthesized on an FTO glass substrate using a simple and facile hydrothermal and ion-exchange approaches. The lead sulfide (PbS) QDs was infiltrated into ZnO/ZnSe NWs via SILAR method for making inorganic quantum dot sensitized ZnO/ZnSe/PbS QDs solar cell. The surface morphology, structural, optical, and J-V characteristics have been investigated. The ZnO/ZnSe NW is a core–shell like structure, and the absorption edge shifted from the UV region (ZnO NWs) to the near infrared region for ZnO/ZnSe NWs/PbS QDs. For PbS QDs-sensitized solar cell, the obtained value of η = 1.1%, J{sub sc} = 20.60 mA/cm{sup 2}, V{sub oc} = 155 mV, and FF = 34.7%, respectively. The photovoltaic performance of the device in this study is still inferior. However, it is the first report regarding to ZnO/ZnZe NWs/PbS QDs solar cell. The achieving high absorption and large short circuit current density may interest in further improvement of the device performance by suppressing surface defects, optimizing the quality of ZnO/ZnSe NWs and PbS QDs.

Alkaline earth lead and tin compounds Ae2Pb, Ae2Sn, Ae = Ca, Sr, Ba, as thermoelectric materials

Science.gov (United States)

Parker, David; Singh, David J

2013-01-01

We present a detailed theoretical study of three alkaline earth compounds Ca2Pb, Sr2Pb and Ba2Pb, which have undergone little previous study, calculating electronic band structures and Boltzmann transport and bulk moduli using density functional theory. We also study the corresponding tin compounds Ca2Sn, Sr2Sn and Ba2Sn. We find that these are all narrow band gap semiconductors with an electronic structure favorable for thermoelectric performance, with substantial thermopowers for the lead compounds at temperature ranges from 300 to 800 K. For the lead compounds, we further find very low calculated bulk moduli—roughly half of the values for the lead chalcogenides, suggestive of soft phonons and hence low lattice thermal conductivity. All these facts indicate that these materials merit experimental investigation as potential high performance thermoelectrics. We find good potential for thermoelectric performance in the environmentally friendly stannide materials, particularly at high temperature. PMID:27877610

Alkaline earth lead and tin compounds Ae2Pb, Ae2Sn, Ae = Ca, Sr, Ba, as thermoelectric materials

Directory of Open Access Journals (Sweden)

David Parker and David J Singh

2013-01-01

Full Text Available We present a detailed theoretical study of three alkaline earth compounds Ca2Pb, Sr2Pb and Ba2Pb, which have undergone little previous study, calculating electronic band structures and Boltzmann transport and bulk moduli using density functional theory. We also study the corresponding tin compounds Ca2Sn, Sr2Sn and Ba2Sn. We find that these are all narrow band gap semiconductors with an electronic structure favorable for thermoelectric performance, with substantial thermopowers for the lead compounds at temperature ranges from 300 to 800 K. For the lead compounds, we further find very low calculated bulk moduli—roughly half of the values for the lead chalcogenides, suggestive of soft phonons and hence low lattice thermal conductivity. All these facts indicate that these materials merit experimental investigation as potential high performance thermoelectrics. We find good potential for thermoelectric performance in the environmentally friendly stannide materials, particularly at high temperature.

Corrosion behaviour of boiler tube materials during combustion of fuels containing Zn and Pb

Energy Technology Data Exchange (ETDEWEB)

Bankiewicz, D.

2012-11-01

Many power plants burning challenging fuels such as waste-derived fuels experience failures of the superheaters and/or increased waterwall corrosion due to aggressive fuel components already at low temperatures. To minimize corrosion problems in waste-fired boilers, the steam temperature is currently kept at a relatively low level which drastically limits power production efficiency. The elements found in deposits of waste and waste-derived fuels burning boilers that are most frequently associated with high-temperature corrosion are: Cl, S, and there are also indications of Br; alkali metals, mainly K and Na, and heavy metals such as Pb and Zn. The low steam pressure and temperature in waste-fired boilers also influence the temperature of the waterwall steel which is nowadays kept in the range of 300 deg C - 400 deg C. Alkali chloride (KCl, NaCl) induced high-temperature corrosion has not been reported to be particularly relevant at such low material temperatures, but the presence of Zn and Pb compounds in the deposits have been found to induce corrosion already in the 300 deg C - 400 deg C temperature range. Upon combustion, Zn and Pb may react with Cl and S to form chlorides and sulphates in the flue gases. These specific heavy metal compounds are of special concern due to the formation of low melting salt mixtures. These low melting, gaseous or solid compounds are entrained in the flue gases and may stick or condense on colder surfaces of furnace walls and superheaters when passing the convective parts of the boiler, thereby forming an aggressive deposit. A deposit rich in heavy metal (Zn, Pb) chlorides and sulphates increases the risk for corrosion which can be additionally enhanced by the presence of a molten phase. The objective of this study was to obtain better insight into high-temperature corrosion induced by Zn and Pb and to estimate the behaviour and resistance of some boiler superheater and waterwall materials in environments rich in those heavy metals

Applications of thermodynamic calculations to Mg alloy design: Mg-Sn based alloy development

International Nuclear Information System (INIS)

Jung, In-Ho; Park, Woo-Jin; Ahn, Sang Ho; Kang, Dae Hoon; Kim, Nack J.

2007-01-01

Recently an Mg-Sn based alloy system has been investigated actively in order to develop new magnesium alloys which have a stable structure and good mechanical properties at high temperatures. Thermodynamic modeling of the Mg-Al-Mn-Sb-Si-Sn-Zn system was performed based on available thermodynamic, phase equilibria and phase diagram data. Using the optimized database, the phase relationships of the Mg-Sn-Al-Zn alloys with additions of Si and Sb were calculated and compared with their experimental microstructures. It is shown that the calculated results are in good agreement with experimental microstructures, which proves the applicability of thermodynamic calculations for new Mg alloy design. All calculations were performed using FactSage thermochemical software. (orig.)

Au-Ge based Candidate Alloys for High-Temperature Lead-Free Solder Alternatives

DEFF Research Database (Denmark)

Chidambaram, Vivek; Hald, John; Hattel, Jesper Henri

2009-01-01

Au-Ge based candidate alloys have been proposed as an alternative to high-lead content solders that are currently being used for high-temperature applications. The influence of the low melting point metals namely In, Sb and Sn to the Au-Ge eutectic with respect to the microstructure and microhard......Au-Ge based candidate alloys have been proposed as an alternative to high-lead content solders that are currently being used for high-temperature applications. The influence of the low melting point metals namely In, Sb and Sn to the Au-Ge eutectic with respect to the microstructure...... was primarily strengthened by the refined (Ge) dispersed phase. The distribution of phases played a relatively more crucial role in determining the ductility of the bulk solder alloy. In the present work it was found that among the low melting point metals, the addition of Sb to the Au-Ge eutectic would...

Study of the thermoelectric properties of Pb{sub (1-x)} Sn{sub x} Te; Contribution a l'etude des proprietes thermoelectriques de solutions Pb{sub (1-x)}Sn{sub x} Te

Energy Technology Data Exchange (ETDEWEB)

Borde, D [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1967-04-15

The present work concerns the study of the electrical properties (thermoelectric power, electrical resistivity and Hall coefficient) of PbTe and SnTe crystals and of solid polycrystalline solutions of Pb{sub 1-x} Sn{sub x} Te (0.1 < x < 0.6) between 80 and 800 deg. K. From the temperature dependence of these properties and the effect of the addition, it has been possible to characterize the semiconductor nature of these solutions, and to approach their band structure; in particular the forbidden gap behaviour in these solutions has been analyzed and evidence for the existence of a double valence band has been obtained. (author) [French] Le present travail est relatif a l'etude des proprietes electriques, en particulier du pouvoir thermoelectrique de la resistivite electrique et du coefficient de Hall, de cristaux PbTe et SnTe, et de solutions solides polycristallines Pb{sub 1-x} Sn{sub x} Te (0,1 {<=} x {<=} 0,6) entre 80 et 800 deg. K. La variation de ces proprietes avec la temperature, ainsi que l'effet de l'addition de Sn sur celles-ci, ont permis de preciser le caractere semiconducteur de ces solutions, et contribue a la determination de leur structure de bandes, en particulier le comportement de la bande interdite dans ces solutions a ete analyse et l'existence d'une double bande de valence mise en evidence. (auteur)

Postdeposition Annealing Effect on Cu2ZnSnS4 Thin Films Grown at Different Substrate Temperature

Directory of Open Access Journals (Sweden)

Samia Ahmed Nadi

2014-01-01

Full Text Available Cu2ZnSnS4 (CZTS thin films were deposited on top of Molybdenum (Mo coated soda lime glass (SLG substrates using a single target rf magnetron sputtering technique. The sputtering parameters such as base pressure, working pressure, rf power, argon (Ar gas flow rate, and deposition time were kept consistent throughout the experiment. The effect of different substrate temperatures, for example, room temperature (RT, 300°C, 350°C, 370°C, 400°C, and 450°C, was analyzed by studying their structural, electrical, and optical properties. As-sputtered films were then annealed at 460°C. X-ray diffraction (XRD measurement revealed the structure to be kesterite with peak of (112 plane in both annealed and as-sputtered CZTS thin films. The crystallinity of the films improved with the increasing substrate temperature until 370°C. Secondary phases of MoS2, CuxMoSx, CuxSnSx, CuxS, and Cu6MoSnS8 (hemusite were also observed in the annealed CZTS films. Scanning electron microscopy (SEM shows crystallite size of deposited CZTS thin film to be proportionally related to deposition temperature. The highest surface roughness of 67.318 nm is observed by atomic force microscopy (AFM. The conductivity type of the films was found to be p-type by Hall effect measurement system.

Surface tension modelling of liquid Cd-Sn-Zn alloys

Science.gov (United States)

Fima, Przemyslaw; Novakovic, Rada

2018-06-01

The thermodynamic model in conjunction with Butler equation and the geometric models were used for the surface tension calculation of Cd-Sn-Zn liquid alloys. Good agreement was found between the experimental data for limiting binaries and model calculations performed with Butler model. In the case of ternary alloys, the surface tension variation with Cd content is better reproduced in the case of alloys lying on vertical sections defined by high Sn to Zn molar fraction ratio. The calculated surface tension is in relatively good agreement with the available experimental data. In addition, the surface segregation of liquid ternary Cd-Sn-Zn and constituent binaries has also been calculated.

Cu2ZnSnS4 thin film solar cells from electroplated precursors: Novel low-cost perspective

International Nuclear Information System (INIS)

Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Abou-Ras, D.; Koetschau, I.; Schock, H.-W.; Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.

2009-01-01

Thin-film solar cells based on Cu 2 ZnSnS 4 (CZTS) absorbers were fabricated successfully by solid-state reaction in H 2 S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn (II) and Sn (IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited CdS buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm 2 ) efficiency of 3.4% is achieved (V oc = 563 mV, j sc = 14.8 mA/cm 2 , FF = 41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 μm. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu 2 SnS 3 , close to the interface Mo/CZTS

Effect of ZnO and PbO/ZnO on structural and thermal properties of tellurite glasses

International Nuclear Information System (INIS)

Ramamoorthy, Raj Kumar; Bhatnagar, Anil K

2015-01-01

Highlights: • Structural units/linkages variation of TeO 2 -ZnO and TeO 2 -ZnO-PbO glasses was studied. • Structural arrangements of TeO 2 -ZnO glasses are rich in Te-O-Te network. • A mixture of Te-O-Te and Te-O-Pb networks is identified in TeO 2 -ZnO-PbO glasses. • Changes in thermal parameters T g and T o are correlated with the structural variations. • 15PbO and 20PbO samples of TeO 2 -ZnO-PbO glasses show large thermal stability. - Abstract: Two series of glasses, (100 − x)TeO 2 -xZnO (x = 20, 25, 30, 35) and 70TeO 2 -(30 − y)ZnO-yPbO (y = 5, 10, 15, 20), referred as TZ and TZP, respectively, were prepared by a melt quenching technique and characterized by X-ray diffraction (XRD), density, refractive index, Raman scattering and differential scanning calorimetry (DSC) to observe the changes in their properties as a function of ZnO and PbO/ZnO. Variations in individual structural units/linkages in these glasses are derived from the de-convoluted Raman spectra. The glass transition (T g ) and onset of crystallization (T o ) temperatures are determined from DSC isothermal scans. It is observed that the thermal stability (ΔT = T o − T g ) decreases for TZ glasses with increase in x, while it increases for TZP glasses with increase in y. Changes in thermal parameters of these glasses are correlated with the structural variation as a function of ZnO and PbO/ZnO ratio to determine the effect of substitution/addition of metal oxide, ZnO and PbO, to TeO 2 and TeO 2 -ZnO glasses

The effect of intermetallic compound morphology on Cu diffusion in Sn-Ag and Sn-Pb solder bump on the Ni/Cu Under-bump metallization

Science.gov (United States)

Jang, Guh-Yaw; Duh, Jenq-Gong

2005-01-01

The eutectic Sn-Ag solder alloy is one of the candidates for the Pb-free solder, and Sn-Pb solder alloys are still widely used in today’s electronic packages. In this tudy, the interfacial reaction in the eutectic Sn-Ag and Sn-Pb solder joints was investigated with an assembly of a solder/Ni/Cu/Ti/Si3N4/Si multilayer structures. In the Sn-3.5Ag solder joints reflowed at 260°C, only the (Ni1-x,Cux)3Sn4 intermetallic compound (IMC) formed at the solder/Ni interface. For the Sn-37Pb solder reflowed at 225°C for one to ten cycles, only the (Ni1-x,Cux)3Sn4 IMC formed between the solder and the Ni/Cu under-bump metallization (UBM). Nevertheless, the (Cu1-y,Niy)6Sn5 IMC was observed in joints reflowed at 245°C after five cycles and at 265°C after three cycles. With the aid of microstructure evolution, quantitative analysis, and elemental distribution between the solder and Ni/Cu UBM, it was revealed that Cu content in the solder near the solder/IMC interface played an important role in the formation of the (Cu1-y,Niy)6Sn5 IMC. In addition, the diffusion behavior of Cu in eutectic Sn-Ag and Sn-Pb solders with the Ni/Cu UBM were probed and discussed. The atomic flux of Cu diffused through Ni was evaluated by detailed quantitative analysis in an electron probe microanalyzer (EPMA). During reflow, the atomic flux of Cu was on the order of 1016-1017 atoms/cm2sec in both the eutectic Sn-Ag and Sn-Pb systems.

PbSnTe injection lasers

International Nuclear Information System (INIS)

Oron, M.

1982-03-01

Carrier confined homostructure PbSnTe lasers were developed and investigated. In this laser structure good electrical and optical confinement can be achieved by a suitable carrier concentration profile. The advantage of these lasers over PbSnTe heterostructure lasers is the perfect lattice matching between the various layers of the structure. The desired carrier concentration profile was achieved by the growth of several epitaxial layers by the LPE method on a suitable substrate. The performance of these lasers was compared with that of previous homostructure and double heterostructure lasers. (H.K.)

Physical properties of some Sn-based melts

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Ilinykh N.

2011-05-01

Full Text Available The physical properties (viscosity, density, electroresistivity and magnetic susceptibility of pure tin, copper, silver, some binary (Sn - Ag, Sn - Cu, Sn - Bi, Sn - Zn and ternary (Sn-Ag-Cu, Sn-BiAg, Sn-Bi-Zn alloys with near eutectic compositions are investigated in wide temperature ranges. The irreversible decrease of viscosity in pure tin melt is discovered at 820 °С during heating. The similar anomaly with the following hysteresis of dynamic viscosity was fixed for binary and ternary alloys but at higher temperatures – 900 °С and 950 °С respectively. For all the systems it was shown that the alloys with eutectic compositions differ significantly in their electric and magnetic properties from hypo- and hypereutectic ones. Qualitative and quantitative metallographic analysis for Sn-3.8wt.%Ag-0.7wt.%Cu samples, heated low and above characteristic temperatures, showed the influence of melt overheating on crystallization kinetics.

Enhanced Hydrogen Evolution Reactions on Nanostructured Cu{sub 2}ZnSnS{sub 4} (CZTS) Electrocatalyst

Energy Technology Data Exchange (ETDEWEB)

Digraskar, Renuka V.; Mulik, Balaji B. [Department of Chemistry, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, MH (India); Walke, Pravin S. [National Centre for Nanosciences and Nanotechnology, University of Mumbai, Mumbai 400098, MH (India); Ghule, Anil V. [Department of Chemistry, Shivaji University, Kolhapur, 416004, MH (India); Sathe, Bhaskar R., E-mail: bhaskarsathe@gmail.com [Department of Chemistry, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, MH (India)

2017-08-01

Graphical abstract: CZTS nano-electrocatalyst (2.6 ± 0.4 nm) for HER is synthesized by one step sonochemical method with uniform size distribution, which shows promisingly lower onset potential with higher current density and longer stability. - Highlights: • The nanostructured Cu{sub 2}ZnSnS{sub 4} (CZTS; ∼3 nm) based electrocatalytic systems were developed by facile sonochemical method. • The novel Cu{sub 2}ZnSnS{sub 4} based nanoclustered cathode improves the electrocatalytic performance toward hydrogen generation reaction (HER). • The electrocatalytic result exhibits lower Tafel slope, higher exchange current density, excellent current stability and lower charge transfer resistance. • The high activity due to synergetic effect of Cu, Zn, Sn and S from their internal cooperative supports. - Abstract: A novel and facile one-step sonochemical method is used to synthesize Cu{sub 2}ZnSnS{sub 4} (CZTS) nanoparticles (2.6 ± 0.4 nm) as cathode electrocatalyst for hydrogen evolution reactions. The detailed morphology, crystal and surface structure, and composition of the CZTS nanostructures were characterized by high resolution transmission electron microscopy (HR-TEM), Selected area electron diffraction (SAED), X-ray diffraction, Raman spectroscopy, FTIR analysis, Brunauer−Emmett−Teller (BET) surface area measurements, Electron dispersive analysis, X-ray photoelectron spectroscopy respectively. Electrocatalytic abilities of the nanoparticles toward Hydrogen Evolution Reactions (HER) were verified through cyclic voltammograms (CV) and Linear sweep voltammetry (LSV), electrochemical impedance spectroscopy (EIS), and Tafel polarization measurements. It reveals enhanced activity at lower onset potential 300 mV v/s RHE, achieved at exceptionally high current density −130 mA/cm{sup 2}, which is higher than the existing non-nobel metal based cathodes. Further result exhibits Tafel slope of 85 mV/dec, exchange current density of 882 mA/cm{sup 2}, excellent

Application of Zn isotopes in environmental impact assessment of Zn–Pb metallurgical industries: A mini review

International Nuclear Information System (INIS)

Yin, Nang-Htay; Sivry, Yann; Benedetti, Marc F.; Lens, Piet N.L.; Hullebusch, Eric D. van

2016-01-01

Zn and Pb smelters are the major contributors to Zn and Pb emissions among all anthropogenic sources, thus, it is essential to understand Zn isotopic variations within the context of metallurgical industries, as well as its fractionation in different environments impacted by smelting activities. This mini review outlines the current state of knowledge on Zn isotopic fractionation during the high-temperature roasting process in Zn and Pb refineries; δ"6"6Zn values variations in air emissions, slags and effluents from the smelters in comparison to the geogenic Zn isotopic signature of ores formation and weathering. In order to assess the environmental impact of these smelters, the available and measured δ"6"6Zn values are compiled for smelter impacted natural water bodies (groundwater, stream and river water), sediments (lake and reservoir) and soils (peat bog soil, inland soil). Finally, the discussion is extended to the fractionation induced during numerous physicochemical reactions and transformations, i.e. adsorption, precipitation as well as both inorganic and organic surface complexation. - Highlights: • Zn and Pb smelters are the major contributors to Zn emissions among all anthropogenic sources. • Zn isotopic variations in this context has been widely studied over the last 15 years. • Zn isotopic fractionation during the high-temperature roasting process and electroplating process is summarize. • Subsequent δ"6"6Zn values variations in air emissions, slags and effluents from the smelters are compared to the geogenic one. • The usefulness of δ"6"6Zn values to trace environmental impact of these smelters is discussed.

Effect of silver and indium addition on mechanical properties and indentation creep behavior of rapidly solidified Bi–Sn based lead-free solder alloys

International Nuclear Information System (INIS)

Shalaby, Rizk Mostafa

2013-01-01

Mechanical properties and indentation creep of the melt-spun process Bi–42 wt%Sn, Bi–40 wt%Sn–2 wt%In, Bi–40 wt%Sn–2 wt%Ag and Bi–38 wt%Sn–2 wt%In–2 wt%Ag were studied by dynamic resonance technique and Vickers indentation testing at room temperature and compared to that of the traditional Sn–37 wt%Pb eutectic alloy. The results show that the structure of Bi–42 wt%Sn alloy is characterized by the presence of rhombohedral Bi and body centered tetragonal β-Sn. The two ternary alloys exhibit additional constituent phases of intermetallic compounds SnIn 19 for Bi–40 wt%Sn–2 wt%In and ε-Ag 3 Sn for Bi–40 wt%Sn–2 wt%Ag alloys. Attention has been paid to the role of intermetallic compounds on mechanical and creep behavior. The In and Ag containing solder alloy exhibited a good combination of higher creep resistance, good mechanical properties and lower melting temperature as compared with Pb–Sn eutectic solder alloy. This was attributed to the strengthening effect of Bi as a strong solid solution element in the Sn matrix and formation of intermetallic compounds β-SnBi, ε-Ag 3 Sn and InSn 19 which act as both strengthening agent and grain refiner in the matrix of the material. Addition of In and Ag decreased the melting temperature of Bi–Sn lead-free solder from 143 °C to 133 °C which was possible mainly due to the existence of InSn 19 and Ag 3 Sn intermetallic compounds. Elastic constants, internal friction and thermal properties of Bi–Sn based alloys have been studied and analyzed.

Hydrothermal Synthesis of Pt-, Fe-, and Zn-doped SnO2 Nanospheres and Carbon Monoxide Sensing Properties

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Weigen Chen

2013-01-01

Full Text Available Pure and M-doped (M = Pt, Fe, and Zn SnO2 nanospheres were successfully synthesized via a simple and facile hydrothermal method and characterized by X-ray powder diffraction, field-emission scanning electron microscopy, and energy dispersive spectroscopy. Chemical gas sensors were fabricated based on the as-synthesized nanostructures, and carbon monoxide sensing properties were systematically measured. Compared to pure, Fe-, and Zn-doped SnO2 nanospheres, the Pt-doped SnO2 nanospheres sensor exhibits higher sensitivity, lower operating temperature, more rapid response and recovery, better stability, and excellent selectivity. In addition, a theoretical study based on the first principles calculation was conducted. All results demonstrate the potential of Pt dopant for improving the gas sensing properties of SnO2-based sensors to carbon monoxide.

First-principles study on band structures and electrical transports of doped-SnTe

Directory of Open Access Journals (Sweden)

Xiao Dong

2016-06-01

Full Text Available Tin telluride is a thermoelectric material that enables the conversion of thermal energy to electricity. SnTe demonstrates a great potential for large-scale applications due to its lead-free nature and the similar crystal structure to PbTe. In this paper, the effect of dopants (i.e., Mg, Ca, Sr, Ba, Eu, Yb, Zn, Cd, Hg, and In on the band structures and electrical transport properties of SnTe was investigated based on the first-principles density functional theory including spin–orbit coupling. The results show that Zn and Cd have a dominant effect of band convergence, leading to power factor enhancement. Indium induces obvious resonant states, while Hg-doped SnTe exhibits a different behavior with defect states locating slightly above the Fermi level.

One step electrodeposition of Cu2ZnSnS4 thin films in a novel bath with sulfurization free annealing

Science.gov (United States)

Tang, Aiyue; Li, Zhilin; Wang, Feng; Dou, Meiling; Pan, Youya; Guan, Jingyu

2017-04-01

Cu2ZnSnS4 (CZTS) is a quaternary kesterite compound with suitable band gap for thin film solar cells. In most electrodeposition-anneal routes, sulfurization is inevitable because the as-deposited film is lack of S. In this work, a novel green electrolyte was designed for synthesizing CZTS thin films with high S content. In the one-step electrodeposition, K4P2O7 and C7H6O6S were added to form complex with metallic ions in the electrolyte, which could attribute to co-deposition. The as-deposited film obtained high S content satisfying stoichiometry. After a sulfurization free annealing, the continuous and uniform CZTS thin film was obtained, which had pure kesterite structure and a suitable band gap of 1.53 eV. Electrodeposition mechanism investigation revealed that the K4P2O7 prevented the excessive deposition of Cu2+ and Sn2+. The C7H6O6S promoted the reduction of Zn2+. So the additives narrowed the co-deposition potentials of the metallic elements through a synergetic effect. They also promoted the reduction of S2O32- to ensure the co-deposition of the four elements and the stoichiometry. The sulfurization free annealing process can promote the commercialization of CZTS films and the successful design principle of environmental friendly electrolytes could be applied in other electrodeposition systems.

Spatial separation of electrons and holes for enhancing the gas-sensing property of a semiconductor: ZnO/ZnSnO3 nanorod arrays prepared by a hetero-epitaxial growth

Science.gov (United States)

Wang, Ying; Gao, Peng; Sha, Linna; Chi, Qianqian; Yang, Lei; Zhang, Jianjiao; Chen, Yujin; Zhang, Milin

2018-04-01

The construction of semiconductor composites is known as a powerful method used to realize the spatial separation of electrons and the holes in them, which can result in more electrons or holes and increase the dispersion of oxygen ions ({{{{O}}}2}- and O - ) (one of the most critical factors for their gas-sensing properties) on the surface of the semiconductor gas sensor. In this work, using 1D ZnO/ZnSnO3 nanoarrays as an example, which are prepared through a hetero-epitaxial growing process to construct a chemically bonded interface, the above strategy to attain a better semiconductor gas-sensing property has been realized. Compared with single ZnSnO3 nanotubes and no-matching ZnO/ZnSnO3 nanoarrays gas sensors, it has been proven by x-ray photoelectron spectroscopy and photoluminescence spectrum examination that the as-obtained ZnO/ZnSnO3 sensor showed a greatly increased quantity of active surface electrons with exceptional responses to trace target gases and much lower optimum working temperatures (less than about 170 °C). For example, the as-obtained ZnO/ZnSnO3 sensor exhibited an obvious response and short response/recovery time (less than 10 s) towards trace H2S gas (a detection limit down to 700 ppb). The high responses and dynamic repeatability observed in these sensors reveal that the strategy based on the as-presented electron and hole separation is reliable for improving the gas-sensing properties of semiconductors.

Utilization of Pb-free solders in MEMS packaging

Science.gov (United States)

Selvaduray, Guna S.

2003-01-01

Soldering of components within a package plays an important role in providing electrical interconnection, mechanical integrity and thermal dissipation. MEMS packages present challenges that are more complex than microelectronic packages because they are far more sensitive to shock and vibration and also require precision alignment. Soldering is used at two major levels within a MEMS package: at the die attach level and at the component attach level. Emerging environmental regulations worldwide, notably in Europe and Japan, have targeted the elimination of Pb usage in electronic assemblies, due to the inherent toxicity of Pb. This has provided the driving force for development and deployment of Pb-free solder alloys. A relatively large number of Pb-free solder alloys have been proposed by various researchers and companies. Some of these alloys have also been patented. After several years of research, the solder alloy system that has emerged is based on Sn as a major component. The electronics industry has identified different compositions for different specific uses, such as wave soldering, surface mount reflow, etc. The factors that affect choice of an appropriate Pb-free solder can be divided into two major categories, those related to manufacturing, and those related to long term reliability and performance.

Reactivity and stability of thallium oxide for fabricating TlSnZnO toward thin-film transistors with high mobility

Energy Technology Data Exchange (ETDEWEB)

Kishimoto, Katsushi [Graduate School of Materials Science, Nara Institute of Science and Technology, Nara, 630-0192 (Japan); Nose, Yoshitaro [Department of Materials Science and Engineering, Kyoto University, Kyoto, 606-8501 (Japan); Ishikawa, Yasuaki, E-mail: yishikawa@ms.naist.jp [Graduate School of Materials Science, Nara Institute of Science and Technology, Nara, 630-0192 (Japan); Fujii, Mami N.; Uraoka, Yukiharu [Graduate School of Materials Science, Nara Institute of Science and Technology, Nara, 630-0192 (Japan)

2016-07-05

Thermal reaction between thallium oxide (Tl{sub 2}O{sub 3}) and zinc oxide (ZnO), tin oxide (SnO{sub 2}) or indium oxide (In{sub 2}O{sub 3}) annealed at 600 °C for 18 h in the air atmosphere was investigated. From XRD results of 600 °C annealed samples, Tl{sub 2}O{sub 3} had the biggest reactivity compared with ZnO. The EDX results suggest the mechanism in which the thallium atoms scattered and attached uniformly only on ZnO particles. We also analyzed XPS data to compare O 1s bond and Tl 4f bond of as-mixed samples with that of annealed samples, and found that Zn and Sn can contribute in improving Tl and O bonding stability. However, the affinity of In for Tl is weaker than that of Zn or Sn. Finally, we prepared the samples mixed with ZnO, SnO{sub 2}, and Tl{sub 2}O{sub 3} powder and the samples mixed with Zn{sub 2}SnO{sub 4} and Tl{sub 2}O{sub 3} powder annealed at 600 °C for 18 h. Results show that Zn{sub 2}SnO{sub 4} has the same or more reactivity than SnO{sub 2} and ZnO mixed particle despite of the more stable and sufficient dispersion of Zn and Sn atoms. More stable TlSnZnO can be fabricated from Zn{sub 2}SnO{sub 4} + Tl{sub 2}O{sub 3} powder by suitable thermal processes. It is expected that TlSnZnO sputtering target can be fabricated by suitable calcination. - Highlights: • Thermal reaction of Tl{sub 2}O{sub 3} and ZnO, SnO or In{sub 2}O{sub 3} were investigate. • It is found that Tl{sub 2}O{sub 3} is reactive with ZnO rather than SnO or In{sub 2}O{sub 3}. • Two-step annealing process is promising route for forming TlSnZnO tablet.

Analysis of Methanol Sensitivity on SnO2-ZnO Nanocomposite

Science.gov (United States)

Bassey, Enobong E.; Sallis, Philip; Prasad, Krishnamachar

This research reports on the sensing behavior of a nanocomposite of tin dioxide (SnO2) and zinc oxide (ZnO). SnO2-ZnO nanocomposites were fabricated into sensor devices by the radio frequency sputtering method, and used for the characterization of the sensitivity behavior of methanol vapor. The sensor devices were subjected to methanol concentration of 200 ppm at operating temperatures of 150, 250 and 350 °C. A fractional difference model was used to normalize the sensor response, and determine the sensitivity of methanol on the sensor. Response analysis of the SnO2-ZnO sensors to the methanol was most sensitive at 350 °C, followed by 250 and 150 °C. Supported by the morphology (FE-SEM, AFM) analyses of the thin films, the sensitivity behavior confirmed that the nanoparticles of coupled SnO2 and ZnO nanocomposites can promote the charge transportation, and be used to fine-tune the sensitivity of methanol and sensor selectivity to a desired target gas.

In-situ XRD study of alloyed Cu2ZnSnSe4-CuInSe2 thin films for solar cells

International Nuclear Information System (INIS)

Hartnauer, Stefan; Wägele, Leonard A.; Jarzembowski, Enrico; Scheer, Roland

2015-01-01

We investigate the growth of Cu 2 ZnSnSe 4 -CuInSe 2 (CZTISe) thin films using a 2-stage (Cu-rich/Cu-free) co-evaporation process under simultaneous application of in-situ angle dispersive X-ray diffraction (XRD). In-situ XRD allows monitoring the phase formation during preparation. A variation of the content of indium in CZTISe leads to a change in the lattice constant. Single phase CZTISe is formed in a wide range, while at high In contents a phase separation is detected. Because of different thermal expansion coefficients, the X-ray diffraction peaks of ZnSe and CZTISe can be distinguished at elevated substrate temperatures. The formation of ZnSe appears to be inhibited even for low indium content. In-situ XRD shows no detectable sign for the formation of ZnSe. First solar cells of CZTISe have been prepared and show comparable performance to CZTSe. - Highlights: • In-situ XRD study of two-stage co-evaporated Cu 2 ZnSnSe 4 -CuInSe 2 alloyed thin films. • No detection of ZnSe with in-situ XRD due to Indium incorporation • Comparable efficiency of alloyed solar cells

Interfacial Reaction of Sn-Ag-Cu Lead-Free Solder Alloy on Cu: A Review

Directory of Open Access Journals (Sweden)

Liu Mei Lee

2013-01-01

Full Text Available This paper reviews the function and importance of Sn-Ag-Cu solder alloys in electronics industry and the interfacial reaction of Sn-Ag-Cu/Cu solder joint at various solder forms and solder reflow conditions. The Sn-Ag-Cu solder alloys are examined in bulk and in thin film. It then examines the effect of soldering conditions to the formation of intermetallic compounds such as Cu substrate selection, structural phases, morphology evolution, the growth kinetics, temperature and time is also discussed. Sn-Ag-Cu lead-free solder alloys are the most promising candidate for the replacement of Sn-Pb solders in modern microelectronic technology. Sn-Ag-Cu solders could possibly be considered and adapted in miniaturization technologies. Therefore, this paper should be of great interest to a large selection of electronics interconnect materials, reliability, processes, and assembly community.

Microstructure and mechanical properties of Sn-9Zn-xAl2O3 nanoparticles (x=0–1) lead-free solder alloy: First-principles calculation and experimental research

International Nuclear Information System (INIS)

Xing, Wen-qing; Yu, Xin-ye; Li, Heng; Ma, Le; Zuo, Wei; Dong, Peng; Wang, Wen-xian; Ding, Min

2016-01-01

This paper studies microstructure and mechanical properties of Sn-9Zn-x Al 2 O 3 nanoparticles (x=0–1) lead-free solder alloy. The interface structure, interface energy and electronic properties of Al 2 O 3 /Sn9Zn interface are investigated by first-principle calculation. On the experimental part, in comparison with the plain Sn-9Zn solder, the Al 2 O 3 nanoparticles incorporated into the solder matrix can inhibit the growth of coarse dendrite Sn-Zn eutectic structure and refine grains of the composite solders during the solidification process of the alloys. Moreover, the microhardness and average tensile strength of the solders with addition of Al 2 O 3 nanoparticles increased with the increasing weight percentages of Al 2 O 3 nanoparticles. These improved mechanical properties can be attributed to the microstructure developments and the dispersed Al 2 O 3 nanoparticles.

Bidirectional electroluminescence from p-SnO2/i-MgZnO/n-ZnO heterojunction light-emitting diodes

International Nuclear Information System (INIS)

Yang, Yanqin; Li, Songzhan; Liu, Feng; Zhang, Nangang; Liu, Kan; Wang, Shengxiang; Fang, Guojia

2017-01-01

Light-emitting diodes based on p-SnO 2 /i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p-SnO 2 /i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.

Influence of micro-additions of bismuth on structures, mechanical and electrical transport properties of rapidly solidified Sn-3.5% Ag Alloy from melt

International Nuclear Information System (INIS)

El Bahay, M.M.; Mady, H.A.

2005-01-01

The present study was undertaken to investigate the influence of the Bi addition in the Sn-3.5 Ag rapidly solidified binary system for use as a Pb-free solder. The resulting properties of the binary system were extended to the Sn based ternary systems Sn 9 6.5-X Ag 3 .5 Bi x (0≤ X ≤ 2.5) solder. The structure and electrical resistivity of rapidly solidified (melt spun) alloys have been investigated. With the addition of up to 2.5 mass % Bi, the melting temperature decreases from 221.1 to 214.8 degree C. Wetting contact angle of the six alloys on Cu Zn 3 0 substrate are carried out at 573 K. Microhardness evaluations were also performed on the Sn-Ag-Bi alloys. The measured values and other researcher's results were compared with the calculated data

Synthesis of chelating agent free-solid phase extractor (CAF-SPE) based on new SiO2/Al2O3/SnO2 ternary oxide and application for online preconcentration of Pb2+ coupled with FAAS

International Nuclear Information System (INIS)

Tarley, César R.T.; Scheel, Guilherme L.; Zappielo, Caroline D.; Suquila, Fabio A.C.; Ribeiro, Emerson S.

2018-01-01

A new online solid phase preconcentration method using the new SiO 2 /Al2O 3 /SnO 2 ternary oxide (designated as SiAlSn) as chelating agent free-solid phase extractor (CAF-SPE) coupled to flame atomic absorption spectrometry (FAAS) for Pb 2+ determination at trace levels in different kind of samples is proposed. The solid adsorbent has been characterized by Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray fluorescence spectroscopy (XRF) and textural data. The method involves the preconcentration using time-based sampling of Pb 2+ solution at pH 4.3 through 100.0 mg of packed adsorbed into a mini-column under flow rate of 4.0 mL min -1 during 5 min. The elution step was accomplished by using 1.0 mol L -1 HCl. A wide range of analytical curve (5.0-400.0 μg L -1 ), high enrichment factor (40.5), low consumption index (0.5 mL) and low limits of quantification and detection, 5.0 and 1.5 μg L -1 , respectively, were obtained with the developed method. Practical application of method was tested on water samples, chocolate powder, Ginkgo biloba and sediment (certified reference material). On the basis of the results, the SiAlSn can be considered an effective adsorbent belonging to the class of CAF-SPE for Pb 2+ determination from different matrices. (author)

Densities of Pb-Sn alloys during solidification

Science.gov (United States)

Poirier, D. R.

1988-01-01

Data for the densities and expansion coefficients of solid and liquid alloys of the Pb-Sn system are consolidated in this paper. More importantly, the data are analyzed with the purpose of expressing either the density of the solid or of the liquid as a function of its composition and temperature. In particular, the densities of the solid and of the liquid during dendritic solidification are derived. Finally, the solutal and thermal coefficients of volume expansion for the liquid are given as functions of temperature and composition.

Study of Bi-2212 phase doped Sn(Pb) by means of pat

International Nuclear Information System (INIS)

Ma Qingzhu; Huang Xiaoqian; Xiong Xiaotao

1997-01-01

Investigation on the effect of Sn/Pb-doped Bi-2212 superconductors has been carried out by the simultaneous measurements of the spectra of positron annihilation lifetime and positron Doppler broadening, together with X-ray diffraction. The results of samples with different doping level show the occupation of Sn atoms on Bi sites. At weak doping level, Sn doping results in a enhancement of cooperation between layers and increment of superconducting transition temperature. At the strong doping level, Sn atoms occupy the sites of Cu-O layers, and at the same time, the other nonsuperconducting phases appear, which results in a decline of the superconducting transition temperature

Layered SnS sodium ion battery anodes synthesized near room temperature

KAUST Repository

Xia, Chuan

2017-08-10

In this report, we demonstrate a simple chemical bath deposition approach for the synthesis of layered SnS nanosheets (typically 6 nm or ~10 layers thick) at very low temperature (40 °C). We successfully synthesized SnS/C hybrid electrodes using a solution-based carbon precursor coating with subsequent carbonization strategy. Our data showed that the ultrathin carbon shell was critical to the cycling stability of the SnS electrodes. As a result, the as-prepared binder-free SnS/C electrodes showed excellent performance as sodium ion battery anodes. Specifically, the SnS/C anodes delivered a reversible capacity as high as 792 mAh·g−1 after 100 cycles at a current density of 100 mA·g−1. They also had superior rate capability (431 mAh·g−1 at 3,000 mA·g−1) and stable long-term cycling performance under a high current density (345 mAh·g−1 after 500 cycles at 3 A·g−1). Our approach opens up a new route to synthesize SnS-based hybrid materials at low temperatures for energy storage and other applications. Our process will be particularly useful for chalcogenide matrix materials that are sensitive to high temperatures during solution synthesis.

Precise measurement of the densities of liquid Bi, Sn, Pb and Sb

International Nuclear Information System (INIS)

Wang Lianwen; Wang Qiang; Xian Aiping; Lu Kunquan

2003-01-01

The densities of liquid Bi, Sn, Pb and Sb have been precisely measured from the melting point up to about 1100 K using an improved Archimedean method. The densities at the melting point for liquid Bi, Sn, Pb and Sb are 10.042 x 10 3 , 6.983 x 10 3 , 10.635 x 10 3 and 6.454 x 10 3 kg m -3 , respectively. Comparisons between our data and those from the literature have been made and they show the present results to be more reliable. Rather than a linear fit for the temperature dependence of the density, a slight deviation from linearity in the temperature dependence of the densities has been observed

Cu{sub 2}ZnSnS{sub 4} thin films obtained by sulfurization of evaporated Cu{sub 2}SnS{sub 3} and ZnS layers: Influence of the ternary precursor features

Energy Technology Data Exchange (ETDEWEB)

Robles, V.; Guillén, C., E-mail: c.guillen@ciemat.es; Trigo, J.F.; Herrero, J.

2017-04-01

Highlights: • Kesterite Cu{sub 2}ZnSnS{sub 4} is got by sulfurization of evaporated Cu{sub 2}SnS{sub 3} and ZnS layers. • Smooth films are obtained by decreasing the growth temperature of Cu{sub 2}SnS{sub 3}. • The lattice strain and the electrical conductivity increase with the Cu-content. • The energy gap diminishes as the Cu-content and/or the surface roughness increase. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been grown by sulfurization of Cu{sub 2}SnS{sub 3} (CTS) and ZnS layers evaporated on glass substrates. Four CTS precursor films have been tested, with two different atomic compositions (Cu/Sn = 1.7 and Cu/Sn = 2.1) and substrate temperatures (350 and 450 °C), together with analogous ZnS layers deposited by maintaining the substrate at 200 °C. The sulfurization of the CTS and ZnS stacked layers was performed at 500 °C during 1 h. The evolution of the crystalline structure, morphology, optical and electrical properties from each CTS precursor to the CZTS compound has been studied, especially the influence of the ternary precursor features on the quaternary film characteristics. The kesterite structure has been identified after sulfurization of the various samples, with main (112) orientation and mean crystallite sizes S{sub 112} = 40–56 nm, being higher for the Cu-poor compositions. The CZTS average roughness has varied in a wide interval R{sub a} = 8–66 nm, being directly related to the CTS precursor layer, which becomes rougher for a higher deposition temperature or Cu content. Besides, the band gap energy and the electrical resistivity of the CZTS films have changed in the ranges E{sub g} = 1.54–1.64 eV and ρ = 0.2–40 Ωcm, both decreasing when the Cu content and/or the surface roughness increase.

Thermoelectric prospects of chemically deposited PbSe and SnSe thin films

Science.gov (United States)

Nair, P. K.; Martínez, Ana Karen; Rosa García Angelmo, Ana; Barrios Salgado, Enue; Nair, M. T. S.

2018-03-01

Thin films of PbSe of 400-600 nm in thickness, were obtained via chemical deposition from a solution containing lead nitrate, thiourea and selenosufate. SnSe thin films of 90-180 nm in thickness, were also obtained by chemical deposition from a solution containing selenosulfate. Optical and electrical properties of these thin films were significantly altered by heating them in selenium vapor at 300 °C. Thin film PbSe has a bandgap (Eg) of 1.17 eV (direct gap, forbidden transitions), which decreases to 0.77 eV when it has been heated. Its electrical conductivity (σ) is p-type: 0.18 Ω-1 cm-1 (as-prepared), and 6.4 Ω-1 cm-1 when heated. Thin film SnSe is of orthorhombic crystalline structure which remains stable when heated at 300 °C, but its Eg increases from 1.12 eV (indirect) in as-prepared film to 1.5 eV (direct, forbidden transitions) upon heating. Its electrical conductivity is p-type, which increases from 0.3 Ω-1 cm-1 (as-prepared) to 1 Ω-1 cm-1 when heated (without Se-vapor). When SnSe film is heated at 300 °C in the presence of Se-vapor, they transform to SnSe2, with Eg of 1.5 eV (direct, forbidden) with n-type electrical conductivity, 11 Ω-1 cm-1. The Seebeck coefficient for the PbSe films is: +0.55 mV K-1 (as prepared) and +0.275 mV K-1 (heated); for SnSe films it is: +0.3 mV K-1 (as prepared) and +0.20 mV K-1 (heated); and for SnSe2 film, - 0.35 mV K-1. A five-element PbSe-SnSe2-PbSe-SnSe2-PbSe thermoelectric device demonstrated 50 mV for a temperature difference ΔT = 20 °C (2.5 mV K-1). For SnSe-SnSe2-SnSe-SnSe2-SnSe device, the value is 15 mV for ΔT = 20 °C (0.75 mV K-1). Prospect of these thin films in thermoelectric devices of hybrid materials, in which the coatings may be applied on distinct substrate and geometries is attractive.

Preparation of Cu{sub 2}ZnSnSe{sub 4} solar cells by low-temperature co-evaporation and following selenization

Energy Technology Data Exchange (ETDEWEB)

Gao, Chao, E-mail: chao.gao@kit.edu; Hetterich, Michael [Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany); Schnabel, Thomas; Abzieher, Tobias; Ahlswede, Erik [Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), 70565 Stuttgart (Germany); Powalla, Michael [Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), 70565 Stuttgart (Germany); Light Technology Institute (LTI), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany)

2016-01-04

Cu{sub 2}ZnSnSe{sub 4} (CZTSe) thin films are prepared by a two-step method which involves co-evaporation of Cu, Zn, Sn, and Se on molybdenum-coated soda-lime glass at low substrate temperature and a following selenization. Solar cells with efficiencies of up to 6.5% can be achieved. The influence of the selenium deposition rates during co-evaporation and the nitrogen pressure during selenization on the properties of the CZTSe films are investigated. It is found that these two parameters can significantly affect the morphology and crystallinity of the CZTSe films. The possible reasons for the experimental results are discussed.

Effect of trace elements on the interface reactions between two lead-free solders and copper or nickel substrates

Directory of Open Access Journals (Sweden)

Soares D.

2007-01-01

Full Text Available Traditional Sn-Pb solder alloys are being replaced, because of environmental and health concerns about lead toxicity. Among some alternative alloy systems, the Sn-Zn and Sn-Cu base alloy systems have been studied and reveal promising properties. The reliability of a solder joint is affected by the solder/substrate interaction and the nature of the layers formed at the interface. The solder/substrate reactions, for Sn-Zn and Sn-Cu base solder alloys, were evaluated in what concerns the morphology and chemical composition of the interface layers. The effect of the addition of P, at low levels, on the chemical composition of the layers present at the interface was studied. The phases formed at the interface between the Cu or Ni substrate and a molten lead-free solder at 250ºC, were studied for different stage times and alloy compositions. The melting temperatures, of the studied alloys, were determined by Differential Scanning Calorimetry (DSC. Identification of equilibrium phases formed at the interface layer, and the evaluation of their chemical composition were performed by Scanning Electron Microscopy (SEM/EDS. Different interface characteristics were obtained, namely for the alloys containing Zn. The obtained IML layer thickness was compared, for both types of alloy systems.

Optimization of Firing Temperature of PbO-doped SnO2 Sensor for Detection of Acetone, Methanol, Propanol

Directory of Open Access Journals (Sweden)

J. K. Srivastava

2009-08-01

Full Text Available In the present work, the response of a set of three PbO (1 % wt doped thick film SnO2 sensors fired at different firing temperatures (6500 C, 7500 C, 8500 C have been studied. The selection of appropriate firing temperature is necessary for the sensor fabrication in order to achieve the highest sensitivity for a particular species of gas. To achieve this, thick film PbO-doped sensor were fabricated on a 1˝x1˝ alumina substrate. The sensitivity of these sensors has been studied at different operating temperatures (1500 C-3500 C upon exposure to acetone, methanol and propanol. The sensor fired at 8500 C besides having good adhesion yields maximum sensitivity at an operating temperature of 2500 C for all gases except acetone for which it gives maximum response at 2000 C.

Atomic Layer Deposition of Electron Selective SnOx and ZnO Films on Mixed Halide Perovskite: Compatibility and Performance.

Science.gov (United States)

Hultqvist, Adam; Aitola, Kerttu; Sveinbjörnsson, Kári; Saki, Zahra; Larsson, Fredrik; Törndahl, Tobias; Johansson, Erik; Boschloo, Gerrit; Edoff, Marika

2017-09-06

The compatibility of atomic layer deposition directly onto the mixed halide perovskite formamidinium lead iodide:methylammonium lead bromide (CH(NH 2 ) 2 , CH 3 NH 3 )Pb(I,Br) 3 (FAPbI 3 :MAPbBr 3 ) perovskite films is investigated by exposing the perovskite films to the full or partial atomic layer deposition processes for the electron selective layer candidates ZnO and SnO x . Exposing the samples to the heat, the vacuum, and even the counter reactant of H 2 O of the atomic layer deposition processes does not appear to alter the perovskite films in terms of crystallinity, but the choice of metal precursor is found to be critical. The Zn precursor Zn(C 2 H 5 ) 2 either by itself or in combination with H 2 O during the ZnO atomic layer deposition (ALD) process is found to enhance the decomposition of the bulk of the perovskite film into PbI 2 without even forming ZnO. In contrast, the Sn precursor Sn(N(CH 3 ) 2 ) 4 does not seem to degrade the bulk of the perovskite film, and conformal SnO x films can successfully be grown on top of it using atomic layer deposition. Using this SnO x film as the electron selective layer in inverted perovskite solar cells results in a lower power conversion efficiency of 3.4% than the 8.4% for the reference devices using phenyl-C 70 -butyric acid methyl ester. However, the devices with SnO x show strong hysteresis and can be pushed to an efficiency of 7.8% after biasing treatments. Still, these cells lacks both open circuit voltage and fill factor compared to the references, especially when thicker SnO x films are used. Upon further investigation, a possible cause of these losses could be that the perovskite/SnO x interface is not ideal and more specifically found to be rich in Sn, O, and halides, which is probably a result of the nucleation during the SnO x growth and which might introduce barriers or alter the band alignment for the transport of charge carriers.

Characteristics of ZnO Wafers Implanted with 60 keV Sn+ Ions at Room Temperature and at 110 K

International Nuclear Information System (INIS)

Dang, Giang T.; Taniwaki, Masafumi; Kawaharamura, Toshiyuki; Hirao, Takashi; Nitta, Noriko

2011-01-01

ZnO wafers implanted with 60 keV Sn + ions at room temperature (RT) and at 110 K are investigated by means of X-ray diffraction (XRD) and photoluminescence (PL) techniques. The effect of implantation temperature is evident in the XRD and PL data. A yellow-orange (YO) band near 600 nm appears in the PL spectra of the ZnO wafers implanted to the doses of 4x10 14 and 8x10 14 ions/cm 2 at RT. The intensity of this band increases and the peak position blue-shifts after illumination of the samples with the 325 nm line of a He-Cd laser. The PL data suggests that the CB (conduction band)→V O + and Zn i + →V Zn - transitions contribute to the photoemission of the YO band.

Influence of sintering temperature on screen printed Cu2ZnSnS4 (CZTS) films

International Nuclear Information System (INIS)

Wang Yu; Huang Yanhua; Lee, Alex Y.S.; Wang Chiou Fu; Gong Hao

2012-01-01

Highlights: ► The influences of sintering temperature on structure and properties of screen printed Cu 2 ZnSnS 4 (CZTS) were investigated. ► It was found that the direct optical band gap increased with increasing the sintering temperature. ► The screen printed CZTS film after sintering at 450 °C had a high photosensitivity (G i − G d )/G d of 14%. ► The hexagonal CuS phase aggregated after sintering at 500 °C and higher temperature. - Abstract: Screen printing is a useful and simple method for coating layers of several solar materials, but care must be taken in preparing stoichiometric CZTS film due to its instability at a high processing temperature and a small chemical potential domain. This paper reports screen printing prepared CZTS films and the influence of sintering temperature on CZTS properties. The thermostability, structural, electronic and optical properties are studied. The direct optical band gap energies of the films vary from 1.39 to 1.60 eV, while the resistivities change from 830 to 6 Ω cm after sintering at different temperatures up to 550 °C. A high photosensitivity of 14% is achieved for the sample sintered at 450 °C. The phenomena observed are also discussed.

Bidirectional electroluminescence from p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Yang, Yanqin [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Li, Songzhan, E-mail: liszhan@whu.edu.cn [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Liu, Feng; Zhang, Nangang; Liu, Kan [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Wang, Shengxiang, E-mail: sxwang@wtu.edu.cn [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Fang, Guojia [Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072 (China)

2017-06-15

Light-emitting diodes based on p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.

Cu{sub 2}ZnSnS{sub 4} thin film solar cells from electroplated precursors: Novel low-cost perspective

Energy Technology Data Exchange (ETDEWEB)

Ennaoui, A. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienickerstrasse 100, D-14109 Berlin (Germany)], E-mail: ennaoui@helmholtz-berlin.de; Lux-Steiner, M.; Weber, A.; Abou-Ras, D.; Koetschau, I.; Schock, H.-W. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienickerstrasse 100, D-14109 Berlin (Germany); Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R. [Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany); Voss, T.; Schulze, J.; Kirbs, A. [Atotech Deutschland GmbH, Erasmusstr. 20, D-10553 Berlin (Germany)

2009-02-02

Thin-film solar cells based on Cu{sub 2}ZnSnS{sub 4} (CZTS) absorbers were fabricated successfully by solid-state reaction in H{sub 2}S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn (II) and Sn (IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited CdS buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm{sup 2}) efficiency of 3.4% is achieved (V{sub oc} = 563 mV, j{sub sc} = 14.8 mA/cm{sup 2}, FF = 41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 {mu}m. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu{sub 2}SnS{sub 3}, close to the interface Mo/CZTS.

Determinations of enthalpy and partial molar enthalpy in the alloys Bi–Cd–Ga–In–Zn, Bi–Cd–Ga–Zn and Au–Cu–Sn

International Nuclear Information System (INIS)

Arslan, Hüseyin

2015-01-01

In the present study, the relations of thermodynamic associated with Chou's general solution model (GSM), the models of Muggianu and Toop have been used in order to calculate the mixing enthalpy and partial molar mixing enthalpy of mixing of Bi–Cd–Ga–In–Zn, Bi–Cd–Ga–Zn with equimolar section at a temperature of 730 K and Au–Cu–Sn with the section x Au /x Cu = 1/1 on the entire molar fraction range as a function of alloy composition at a temperature of 900 K. Some negativities are reported in the selected alloys mentioned above, particularly at high temperatures for the human health as well as difficulties in experimental measurement and high costs. Moreover, aim of us is to close the current article gap seen in the literature. In order to close the current gap seen in the literature, the article on the thermodynamic properties of the Bi–Cd–Ga–In–Zn alloys are presented in this study. - Highlights: • Thermodynamic properties of alloys in the study in given conditions were treated. • The activity of Bi seen in all models shows greatly positive deviation from ideality. • The enthalpy of Sn shows small negative values in x Au /x Cu = 1 at 900 K. • The activity of Sn shows negative deviation from ideality in the same conditions

Characterization of lead-free solders for electronic packaging

Science.gov (United States)

Ma, Hongtao

The characterization of lead-free solders, especially after isothermal aging, is very important in order to accurately predict the reliability of solder joints. However, due to lack of experimental testing standards and the high homologous temperature of solder alloys (Th > 0.5T m even at room temperature), there are very large discrepancies in both the tensile and creep properties provided in current databases for both lead-free and Sn-Pb solder alloys. In this research, mechanical measurements of isothermal aging effects and the resulting changes in the materials behavior of lead-free solders were performed. A novel specimen preparation procedure was developed where the solder uniaxial test specimens are formed in high precision rectangular cross-section glass tubes using a vacuum suction process. Using specimens fabricated with the developed procedure, isothermal aging effects and viscoplastic material behavior evolution have been characterized for 95.5Sn-4.0Ag-0.5Cu (SAC405) and 96.5Sn-3.0Ag-0.5Cu (SAC305) lead-free solders, which are commonly used as the solder ball alloy in lead-free BGAs and other components. Analogous tests were performed with 63Sn-37Pb eutectic solder samples for comparison purposes. Up to 40% reduction in tensile strength was observed for water quenched specimens after two months of aging at room temperature. Creep deformation also increased dramatically with increasing aging durations. Microstructural changes during room temperature aging were also observed and recorded for the solder alloys and correlated with the observed mechanical behavior changes. Aging effects at elevated temperatures for up to 6 months were also investigated. Thermal aging caused significant tensile strength loss and deterioration of creep deformation. The thermal aging results also showed that after an initial tensile strength drop, the Sn-Pb eutectic solder reached a relatively stable stage after 200 hours of aging. However, for SAC alloy, both the tensile and

Formation and stability of Pb-, Zn- and Cu-PO4 phases at low temperatures: Implications for heavy metal fixation in polar environments

International Nuclear Information System (INIS)

White, Duanne A.; Hafsteinsdóttir, Erla G.; Gore, Damian B.; Thorogood, Gordon; Stark, Scott C.

2012-01-01

Low temperatures and frequent soil freeze–thaw in polar environments present challenges for the immobilisation of metals. To address these challenges we investigated the chemical forms of Pb, Zn and Cu in an Antarctic landfill, examined in vitro reaction kinetics of these metals and orthophosphate at 2 and 22 °C for up to 185 days, and subjected the products to freeze–thaw. Reaction products at both temperatures were similar, but the rate of production varied, with Cu-PO 4 phases forming faster, and the Zn- and Pb-PO 4 phases slower at 2 °C. All metal-orthophosphate phases produced were stable during a 2.5 h freeze–thaw cycle to −30 °C. Metal immobilisation using orthophosphate can be successful in polar regions, but treatments will need to consider differing mineral stabilities and reaction rates at low temperatures. - Highlights: ► We identify Cu, Pb and Zn species in an Antarctic Landfill. ► We identify the products and rates of reactions between metals and PO 4 3− at 2 and 22 °C. ► We test the stability of metal-orthophosphate species during freeze–thaw. ► We conclude that orthophosphate may immobilize metals in freezing ground. - Pb, Cu and Zn react with PO 4 3− at low temperatures (2 °C) to form low solubility metal-PO 4 phases at rates that may enable the in-situ remediation of metal contaminated soils in polar areas.

Investigation on structural, surface morphological and dielectric properties of Zn-doped SnO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Sagadevan, Suresh [Department of Physics, AMET University, Chennai (India); Podder, Jiban, E-mail: sureshsagadevan@gmail.com [Department of Chemical and Biological Engineering, University of Saskatchewan (Canada)

2016-03-15

Zinc doped Tin oxide (SnO{sub 2}) nanoparticles were prepared by co-precipitation method. The average crystallite size of pure and Zn-doped SnO{sub 2} nanoparticles was calculated from the X-ray diffraction (XRD) pattern. The FT-IR spectrum indicated the strong presence of SnO{sub 2} nanoparticles. The morphology and the particle size were studied using the scanning electron microscope (SEM) and transmission electron microscope (TEM). The particle size of the Zn-doped SnO{sub 2} nanoparticles was also analyzed, using the Dynamic Light Scattering (DLS) experiment. The optical properties were studied by the UV-Visible absorption spectrum. The dielectric properties of Zn-doped SnO{sub 2} nanoparticles were studied at different frequencies and temperatures. The ac conductivity of Zn-doped SnO{sub 2} nanoparticles was also studied. (author)

A detailed study on Sn4+ doped ZnO for enhanced photocatalytic degradation

Science.gov (United States)

Beura, Rosalin; Pachaiappan, R.; Thangadurai, P.

2018-03-01

The samples of Sn4+ doped (1, 5, 10, 15, 20 & 30%) ZnO nanostructures were synthesized by a low temperature hydrothermal method. Structural analysis by XRD and Raman spectroscopy showed the hexagonal wurtzite phase of ZnO and the formation of a secondary phase Zn2SnO4 beyond 10% doping of Sn4+. Microstructural analysis by TEM also confirmed the wurtzite ZnO with rod as well as particle like structure. Presence of various functional groups (sbnd OH, sbnd CH, Znsbnd O) were confirmed by FTIR. Optical properties were studied by UV-vis absorption, photoluminescence emission spectroscopies and lifetime measurement. Band gap of the undoped and Sn4+ doped ZnO were analyzed by Tauc plot and it was observed that the band gap of the materials had slightly decreased from 3.2 to 3.16 eV and again increased to 3.23 eV with respect to the increase in the doping concentration from 1 to 30%. A significant change was also noticed in the photoluminescence emission properties of ZnO i.e. increase in the intensity of NBE emission and decrease in DLE, on subject to Sn4+ doping. Average PL lifetime had increased from 29.45 ns for ZnO to 30.62 ns upon 1% Sn ion doping in ZnO. Electrical properties studied by solid state impedance spectroscopy showed that the conductivity had increased by one order of magnitude (from 7.48×10-8 to 2.21×10-7 S/cm) on Sn4+ doping. Photocatalytic experiments were performed on methyl orange (MO) as a model industrial dye under UV light irradiation for different irradiation times. The optimum Sn4+ content in order to achieve highest photocatalytic activity was found to be 1% Sn 4+ doping. The enhancement was achieved due to a decrease in the band gap favoring the generation of electron-hole pairs and the enhanced PL life time that delays the recombination of these charge carrier formation. The third reason was that the increased electrical conductivity that indicated the faster charge transfer in this material to enhance the photocatalytic activity. The Sn

The Effect of Wetting Gravity Regime on Shear Strength of SAC and Sn-Pb Solder Lap Joints

Science.gov (United States)

Sona, Mrunali; Prabhu, K. Narayan

2017-09-01

The failure of solder joints due to imposed stresses in an electronic assembly is governed by shear bond strength. In the present study, the effect of wetting gravity regime on single-lap shear strength of Sn-0.3Ag-0.7Cu and Sn-2.5Ag-0.5Cu solder alloys reflowed between bare copper substrates as well as Ni-coated Cu substrates was investigated. Samples were reflowed for 10 s, T gz (time corresponding to the end of gravity regime) and 100 s individually and tested for single-lap shear strength. The single-lap shear test was also carried out on eutectic Sn-Pb/Cu- and Sn-Pb/Ni-coated Cu specimens to compare the shear strength values obtained with those of lead-free alloys. The eutectic Sn-Pb showed significantly higher ultimate shear strength on bare Cu substrates when compared to Sn-Ag-Cu alloys. However, SAC alloys reflowed on nickel-coated copper substrate exhibited higher shear strength when compared to eutectic Sn-Pb/Ni-coated Cu specimens. All the substrate/solder/substrate lap joint specimens that were reflowed for the time corresponding to the end of gravity regime exhibited maximum ultimate shear strength.

Thermoelectric Properties of SnO2 Ceramics Doped with Sb and Zn

DEFF Research Database (Denmark)

Yanagiya, S.; Van Nong, Ngo; Xu, Jianxiao Jackie

2011-01-01

Polycrystalline SnO2-based samples (Sn0.97−x Sb0.03Zn x O2, x = 0, 0.01, 0.03) were prepared by solid-state reactions. The thermoelectric properties of SnO2 doped with Sb and Zn were investigated from 300 K to 1100 K. X-ray diffraction (XRD) analysis revealed all XRD peaks of all the samples...

Effects of ZnO addition on electrical and structural properties of amorphous SnO2 thin films

International Nuclear Information System (INIS)

Ko, J.H.; Kim, I.H.; Kim, D.; Lee, K.S.; Lee, T.S.; Jeong, J.-H.; Cheong, B.; Baik, Y.J.; Kim, W.M.

2006-01-01

Amorphous Zn-Sn-O (ZTO) thin films with relative Zn contents (= [at.% Zn]/([at.% Zn] + [at.% Sn])) of 0, 0.08 and 0.27 were fabricated by co-sputtering of SnO 2 and ZnO targets at room temperature. Changes in structural, electrical and optical properties together with electron transport properties were examined upon post-annealing treatment in the temperature range from 200 to 600 deg. C in vacuum and in air. Characterization by XRD showed that an amorphous ZTO thin film crystallized at higher temperatures with increasing Zn content. Crystallized ZTO films with a relative Zn content of 0.27 might not contain a single SnO 2 phase which is observed in the films of the other compositions. Amorphous ZTO films showed decreasing electrical resistivities with increasing annealing temperature, having a minimum value of 1 x 10 - 3 Ω cm. Upon crystallization, the resistivities increased drastically, which was attributed to poor crystallinity of the crystallized films. All the ZTO films were found to be degenerate semiconductors with non-parabolic conduction bands having effective masses varying from 0.15 to 0.3 in the carrier concentration range of 6 x 10 18 to 2 x 10 2 cm - 3 . As for a ZTO film with a relative Zn content of 0.27, the degree of non-parabolicity was much lower compared with films of the other compositions, leading to a relatively stable mobility over a wide range of carrier concentration

Directional solidification of filamentary shapes of Pb--Cd and Pb--Sn eutectic alloys

International Nuclear Information System (INIS)

Dhindaw, B.K.; Verhoeven, J.D.; Spencer, C.R.; Gibson, E.D.

1978-01-01

Eutectic alloys of Pb--Cd and Pb--Sn were directionally solidified as thin filamentary strips contained in stainless steel and quartz capillaries. As the solidification rate increased the filament width, w, had to be reduced to maintain complete alignment of the lamellae clear across the filament. It was determined that in order to achieve complete alignment the ratio of filament width to lamellar spacing, w/lambda had to be less than about 30. Experiments were carried out at rates of 2-400 μm/s and at temperature gradients of 130 and 320 0 C/cm

Insulators for Pb(1-x)Sn(x)Te

Science.gov (United States)

Tsuo, Y. H.; Sher, A.

1981-01-01

Thin films of LaF3 were e-gun and thermally deposited on several substrates. The e-gun deposited films are fluorine deficient, have high ionic conductivities that persist to 77 K, and high effective dielectric constants. The thermally deposited material tends to be closer to stoichiometric, and have higher effective breakdown field strengths. Thermally deposited LaF3 films with resistivities in excess of 10 to the 12th power ohms - cm were deposited on metal coated glass substrates. The LaF3 films were shown to adhere well to PbSnTe, surviving repeated cycles between room temperature and 77 K. The LaF3 films on GaAs were also studied.

Electrochemical corrosion of Pb-1 wt% Sn and Pb-2.5 wt% Sn alloys for lead-acid battery applications

Energy Technology Data Exchange (ETDEWEB)

Osorio, Wislei R.; Peixoto, Leandro C.; Garcia, Amauri [Department of Materials Engineering, State University of Campinas - UNICAMP, PO Box 612, 13083-970 Campinas, SP (Brazil)

2009-12-01

The aim of this study was to compare the electrochemical corrosion behavior of as-cast Pb-1 wt% Sn and Pb-2.5 wt% Sn alloy samples in a 0.5 M H{sub 2}SO{sub 4} solution at 25 C. A water-cooled unidirectional solidification system was used to obtain the as-cast samples. Electrochemical impedance spectroscopy (EIS) diagrams, potentiodynamic polarization curves and an equivalent circuit analysis were used to evaluate the electrochemical corrosion response. It was found that a coarse cellular array has a better electrochemical corrosion resistance than fine cells. The pre-programming of microstructure cell size of Pb-Sn alloys can be used as an alternative way to produce as-cast components of lead-acid batteries with higher corrosion resistance associated with environmental and economical aspects. (author)

X-ray fluorescence analysis of Pb, Fe and Zn in kohl

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Eman Daar

Full Text Available Kohl, a facial salve used in ancient times as a symbol of affluence, now enjoys more widespread traditional followings, for cosmetic, religious and supposed medicinal purposes. Popularly used by women and men of all ages, particularly those of North African, Middle Eastern, Southern Asia, Japanese and Chinese origins, it is also known to be used on neonates and children from such populations. With small-scale producers of kohl possessing a growing awareness of the adverse market impact of products that contain (lead Pb and other toxicity related elements, some claim their products to be Pb-free, offering an apparent change from the more traditional galena-based (lead sulphide media. Among the published physiological effects of exposure to Pb is that it replaces Ca in bones and teeth, making them weak and fragile, other impacts including nephrotoxicity, also linked with increased Pb blood levels in studies in Oman, Canada, Saudi Arabia, India and Pakistan. Current study involves XRF analysis of Pb, Fe and Zn concentrations in 135 samples of kohl from nine randomly selected suppliers (15 samples of each brand being represented. In pursuit of this, use was made of an in-house assembled facility comprising compact high-performance components, the arrangement offering sufficient sensitivity for the purposes of present study. In most of the samples investigated in the present study observation has been made of concentrations of Pb at elevated levels, quantification of those levels also demonstrating a need to address self-attenuation by the Pb itself. Significant concentration of Fe have also been found in several of the samples. Keywords: X-ray florescence, Pb, Fe and Zn contamination, Kohl

Synthesis of highly non-stoichiometric Cu{sub 2}ZnSnS{sub 4} nanoparticles with tunable bandgaps

Energy Technology Data Exchange (ETDEWEB)

Hamanaka, Yasushi, E-mail: hamanaka@nitech.ac.jp; Oyaizu, Wataru; Kawase, Masanari [Nagoya Institute of Technology, Department of Materials Science and Engineering (Japan); Kuzuya, Toshihiro [Muroran Institute of Technology, College of Design and Manufacturing Technology (Japan)

2017-01-15

Non-stoichiometric Cu{sub 2}ZnSnS{sub 4} nanoparticles with average diameters of 4–15 nm and quasi-polyhedral shape were successfully synthesized by a colloidal method. We found that a non-stoichiometric composition of Zn to Cu in Cu{sub 2}ZnSnS{sub 4} nanoparticles yielded a correlation where Zn content increased with a decrease in Cu content, suggesting formation of lattice defects relating to Cu and Zn, such as a Cu vacancy (V{sub Cu}), antisite with Zn replacing Cu (Zn{sub Cu}), and/or defect cluster of V{sub Cu} and Zn{sub Cu}. The bandgap energy of Cu{sub 2}ZnSnS{sub 4} nanoparticles systematically varies between 1.56 and 1.83 eV depending on the composition ratios of Cu and Zn, resulting in a wider bandgap for Cu-deficient Cu{sub 2}ZnSnS{sub 4} nanoparticles. These characteristics can be ascribed to the modification in electronic band structures due to formation of V{sub Cu} and Zn{sub Cu} on the analogy of ternary copper chalcogenide, chalcopyrite CuInSe{sub 2}, in which the top of the valence band shifts downward with decreasing Cu contents, because much like the structure of CuInSe{sub 2}, the top of the valence band is composed of a Cu 3d orbital in Cu{sub 2}ZnSnS{sub 4}.

Asymmetric ZnO panel-like hierarchical architectures with highly interconnected pathways for free-electron transport and photovoltaic improvements.

Science.gov (United States)

Shi, Yantao; Zhu, Chao; Wang, Lin; Li, Wei; Fung, Kwok Kwong; Wang, Ning

2013-01-02

Through a rapid and template-free precipitation approach, we synthesized an asymmetric panel-like ZnO hierarchical architecture (PHA) for photoanodes of dye-sensitized solar cells (DSCs). The two sides of the PHA are constructed differently using densely interconnected, mono-crystalline and ultrathin ZnO nanosheets. By mixing these PHAs with ZnO nanoparticles (NPs), we developed an effective and feasible strategy to improve the electrical transport and photovoltaic performance of the composite photoanodes of DSCs. The highly crystallized and interconnected ZnO nanosheets largely minimized the total grain boundaries within the composite photoanodes and thus served as direct pathways for the transport and effective collection of free electrons. Through low-temperature (200 °C) annealing, these novel composite photoanodes achieved high conversion efficiencies of up to 5.59% for ZnO-based quasi-solid DSCs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mineralogy, fluid inclusion petrography, and stable isotope geochemistry of Pb-Zn-Ag veins at the Shizhuyuan deposit, Hunan Province, southeastern China

Science.gov (United States)

Wu, Shenghua; Mao, Jingwen; Yuan, Shunda; Dai, Pan; Wang, Xudong

2018-01-01

The Shizhuyuan polymetallic deposit is located in the central part of the Nanling region, southeastern China, and consists of proximal W-Sn-Mo-Bi skarns and greisens and distal Pb-Zn-Ag veins. The sulfides and sulfosalts in the distal veins formed in three distinct stages: (1) an early stage of pyrite and arsenopyrite, (2) a middle stage of sphalerite and chalcopyrite, and (3) a late stage of galena, Ag-, Sn-, and Bi-bearing sulfides and sulfosalts, and pyrrhotite. Combined sulfide and sulfosalt geothermometry and fluid inclusion analyses indicate that the early stage of mineralization occurred at a temperature of 400 °C and involved boiling under hydrostatic pressure ( 200 bar), with the temperature of the system dropping during the late stage to 200 °C. Laser Raman analysis indicates that the fluid inclusions within the studied minerals are dominated by H2O, although some contain carbonate solids and CH4 gas. Vein-hosted sulfides have δ34S values of 3.8-6.3‰ that are interpreted as indicative of a magmatic source of sulfur. The mineralization process can be summarized as follows: an aqueous fluid exsolved on final crystallization of the Qianlishan pluton, ascended along fracture zones, cooled to <400 °C, and boiled under hydrostatic conditions, and with decreasing temperature and sulfur fugacity, sulfide and sulfosalt minerals precipitated successively from the Ag-Cu-Zn-Fe-Pb-Sb-As-S-bearing fluid system.

High temperature luminescence of ZnSe:Yb crystals

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Makhniy V. P.

2016-05-01

Full Text Available The problem of obtaining of effective edge luminescence with high temperature stability in the zinc selenide crystals is discussed. This task is solved by using as the dopant rare-earth element yttrium, which is introduced into the undoped ZnSe crystal by diffusion method. Doping was carried out in an evacuated to 10 -4 Torr. and a sealed quartz ampoule, in the opposite ends of which is a sample and a mixture of the crushed Yb and Se. It has been found that the diffusion coefficient of yttrium at a temperature of 1400 K is about 5⋅10 -7 cm 2/sec. It is shown that in the luminescence spectra of ZnSe:Yb samples in the temperature range 295-470 K only blue band is observed. Dependencies of parameters of this band from the excitation level are typical for the annihilation of excitons at their inelastic scattering by free carriers. The efficacy of blue radiation at 300 K is about 30% and does not fall more than twice with increasing temperature up to 470 K, indicating its high thermal stability.

An evolution from 3D face-centered-cubic ZnSnO3 nanocubes to 2D orthorhombic ZnSnO3 nanosheets with excellent gas sensing performance

International Nuclear Information System (INIS)

Chen Yuejiao; Yu Ling; Li Qing; Wu Yan; Li Qiuhong; Wang Taihong

2012-01-01

We have successfully observed the development of three-dimensional (3D) face-centered-cubic ZnSnO 3 into two-dimensional (2D) orthorhombic ZnSnO 3 nanosheets, which is the first observation of 2D ZnSnO 3 nanostructures to date. The synthesis from 3D to 2D nanostructures is realized by the dual-hydrolysis-assisted liquid precipitation reaction and subsequent hydrothermal treatment. The time-dependent morphology indicates the transformation via a ‘dissolution–recrystallization’ mechanism, accompanied by a ‘further growth’ process. Furthermore, the 2D ZnSnO 3 nanosheets consist of smaller sized nanoflakes. This further increases the special specific surface area and facilitates their application in gas sensing. The 2D ZnSnO 3 nanosheets exhibit excellent gas sensing properties, especially through their ultra-fast response and recovery. When exposed to ethanol and acetone, the response rate is as fast as 0.26 s and 0.18 s, respectively, and the concentration limit can reach as low as 50 ppb of ethanol. All these results are much better than those reported so far. Our experimental results indicate an efficient approach to realize high-performance gas sensors. (paper)

Powder metallurgical processing of functionally graded p-Pb1-x Sn x Te materials for thermoelectric applications

International Nuclear Information System (INIS)

Gelbstein, Y.; Dashevsky, Z.; Dariel, M.P.

2007-01-01

Lead tin telluride-based compounds are p-type materials for thermoelectric applications, in the 50-600 deg. C temperature range. The electronic transport properties of PbTe and Pb 1- x Sn x Te materials are strongly dependent on the processing approach. Powder metallurgy is a suitable approach for the preparation of Functionally graded materials (FGMs) but its effects on the electronic properties have to be carefully checked. Powder metallurgical processing may introduce atomic defects and local strains into the material and, thereby, alter the carrier concentration. Such material may be in non-equilibrium conditions at the operating temperature with unstable thermoelectric properties. This effect can be reduced and eliminated by appropriate annealing procedures. In FGMs, annealing up to the stabilization of the thermoelectric properties is mandatory for achieving the desired carrier concentration profile along the sample. The design procedures of the FGMs, as well as the annealing effects on cold compacted and sintered Pb 1- x Sn x Te samples are described in details

Voids, nanochannels and formation of nanotubes with mobile Sn fillings in Sn doped ZnO nanorods

International Nuclear Information System (INIS)

Ortega, Y; Dieker, Ch; Jaeger, W; Piqueras, J; Fernandez, P

2010-01-01

ZnO nanorods containing different hollow structures have been grown by a thermal evaporation-deposition method with a mixture of ZnS and SnO 2 powders as precursor. Transmission electron microscopy shows rods with rows of voids as well as rods with empty channels along the growth axis. The presence of Sn nanoprecipitates associated with the empty regions indicates, in addition, that these are generated by diffusion processes during growth, probably due to an inhomogeneous distribution of Sn. The mechanism of forming voids and precipitates appears to be based on diffusion processes similar to the Kirkendall effect, which can lead to void formation at interfaces of bulk materials or in core-shell nanostructures. In some cases the nanorods are ZnO tubes partially filled with Sn that has been found to melt and expand by heating the nanotubes under the microscope electron beam. Such metal-semiconductor nanostructures have potential applications as thermal nanosensors or as electrical nanocomponents.

Microstructure and mechanical properties of Sn-9Zn-xAl{sub 2}O{sub 3} nanoparticles (x=0–1) lead-free solder alloy: First-principles calculation and experimental research

Energy Technology Data Exchange (ETDEWEB)

Xing, Wen-qing; Yu, Xin-ye; Li, Heng; Ma, Le; Zuo, Wei [Taiyuan University of Technology, College of Material Science and Technology, Taiyuan 030024 (China); Dong, Peng; Wang, Wen-xian [Taiyuan University of Technology, College of Material Science and Technology, Taiyuan 030024 (China); Shanxi Key Laboratory of Advanced Magnesium-based Materials, Taiyuan 030024 (China); Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024 (China); Ding, Min, E-mail: dingmin@tyut.edu.cn [Taiyuan University of Technology, College of Material Science and Technology, Taiyuan 030024 (China); Shanxi Key Laboratory of Advanced Magnesium-based Materials, Taiyuan 030024 (China); Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024 (China)

2016-12-15

This paper studies microstructure and mechanical properties of Sn-9Zn-x Al{sub 2}O{sub 3} nanoparticles (x=0–1) lead-free solder alloy. The interface structure, interface energy and electronic properties of Al{sub 2}O{sub 3}/Sn9Zn interface are investigated by first-principle calculation. On the experimental part, in comparison with the plain Sn-9Zn solder, the Al{sub 2}O{sub 3} nanoparticles incorporated into the solder matrix can inhibit the growth of coarse dendrite Sn-Zn eutectic structure and refine grains of the composite solders during the solidification process of the alloys. Moreover, the microhardness and average tensile strength of the solders with addition of Al{sub 2}O{sub 3} nanoparticles increased with the increasing weight percentages of Al{sub 2}O{sub 3} nanoparticles. These improved mechanical properties can be attributed to the microstructure developments and the dispersed Al{sub 2}O{sub 3} nanoparticles.

Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

International Nuclear Information System (INIS)

Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

2014-01-01

Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

Effect of bismuth and silver on the corrosion behavior of Sn-9Zn alloy in NaCl 3 wt.% solution

Energy Technology Data Exchange (ETDEWEB)

Ahmido, A. [Laboratory of Chimie Physique General, Faculty of Sciences, University Med V Agdal, Av. Ibn Battouta, B.P. 1014, M-10000 Rabat (Morocco); Laboratory of Spectroscopy Infra Rouge, Faculty of Sciences, University Med V Agdal, Av. Ibn Battouta, B.P. 1014, M-10000 Rabat (Morocco); Sabbar, A. [Laboratory of Chimie Physique General, Faculty of Sciences, University Med V Agdal, Av. Ibn Battouta, B.P. 1014, M-10000 Rabat (Morocco); Zouihri, H.; Dakhsi, K. [UATRS, CNRST, Angle Allal Fassi, FAR, BP 8027, Hay Riad, Rabat (Morocco); Guedira, F. [Laboratory of Chimie Physique General, Faculty of Sciences, University Med V Agdal, Av. Ibn Battouta, B.P. 1014, M-10000 Rabat (Morocco); Serghini-Idrissi, M. [Laboratory of Spectroscopy Infra Rouge, Faculty of Sciences, University Med V Agdal, Av. Ibn Battouta, B.P. 1014, M-10000 Rabat (Morocco); El Hajjaji, S., E-mail: selhajjaji@hotmail.com [Laboratory of Spectroscopy Infra Rouge, Faculty of Sciences, University Med V Agdal, Av. Ibn Battouta, B.P. 1014, M-10000 Rabat (Morocco)

2011-08-15

Highlights: > Sn-9Zn-xAg-yBi as alternative for Sn-Pb solder. > Effect of silver (Ag) and bismuth (Bi) on the corrosion resistance of Sn-9Zn alloy in NaCl 3 wt%. > Bi and Ag lead to the increase of corrosion rate. > EDS and XRD analyses confirmed the oxide of zinc (ZnO and Zn5(OH){sub 8}Cl{sub 2}H{sub 2}O) as the major corrosion product. - Abstract: The effect of silver (Ag) and bismuth (Bi) on the corrosion resistance of Sn-9Zn alloy in NaCl 3 wt.% solution was investigated using electrochemical techniques. The results showed that the addition of Bi and Ag lead to the increase of corrosion rate and the corrosion potential E{sub corr} is shifted towards less noble values. After immersion, X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive of spectroscopy (EDS) analysis of the corroded alloy surface revealed the nature of corrosion products. EDS and XRD analyses confirmed the oxide of zinc (ZnO and Zn{sub 5}(OH){sub 8}Cl{sub 2}H{sub 2}O) as the major corrosion product formed on the outer surface of in the tested three solder alloys.

Synthesis of La2O3 doped Zn2SnO4 hollow fibers by electrospinning method and application in detecting of acetone

Science.gov (United States)

Yang, H. M.; Ma, S. Y.; Yang, G. J.; Chen, Q.; Zeng, Q. Z.; Ge, Q.; Ma, L.; Tie, Y.

2017-12-01

Hollow porous pure and La2O3 doped Zn2SnO4 fibers were synthesized via single capillary electrospinning technology and used for obtaining of gas sensors. The as-prepared samples were characterized by microscopy, Brunauer-Emmett-Teller, X-ray photoelectron spectroscopy and UV-vis absorption spectra. The newly obtained gas sensors were investigated for acetone detection. Compared with pure Zn2SnO4 hollow fibers, the La2O3 doped Zn2SnO4 hollow fibers not only exhibited perfect sensing performance toward acetone with excellent selectivity, high response and fast response/recovery capability (7 s for adsorption and 9 s for desorption), but also the operating temperature was reduced from 240 °C to 200 °C. These results demonstrated that the special hollow porous La doped Zn2SnO4 fibers structures were used as the sensing material for fabricating high performance acetone sensors. The acetone sensing mechanism of La2O3 doped Zn2SnO4 hollow fibers was discussed too.

The single-crystal multinary compound Cu2ZnSnS4 as an environmentally friendly high-performance thermoelectric material

Science.gov (United States)

Nagaoka, Akira; Masuda, Taizo; Yasui, Shintaro; Taniyama, Tomoyasu; Nose, Yoshitaro

2018-05-01

We investigated the thermoelectric properties of high-quality p-type Cu2ZnSnS4 single crystals. This material showed two advantages: low thermal conductivity because of lattice scattering caused by the easily formed Cu/Zn disordered structure, and high conductivity because of high doping from changes to the composition. All samples showed a thermal conductivity of 3.0 W m‑1 K‑1 at 300 K, and the Cu-poor sample showed a conductivity of 7.5 S/cm at 300 K because of the high density of shallow-acceptor Cu vacancies. The figure of merit of the Cu-poor Cu2ZnSnS4 reached 0.2 at 400 K, which is 1.4–45 times higher than those of related compounds.

X-ray fluorescence determination of Sn, Sb, Pb in lead-based bearing alloys using a solution technique

Science.gov (United States)

Tian, Lunfu; Wang, Lili; Gao, Wei; Weng, Xiaodong; Liu, Jianhui; Zou, Deshuang; Dai, Yichun; Huang, Shuke

2018-03-01

For the quantitative analysis of the principal elements in lead-antimony-tin alloys, directly X-ray fluorescence (XRF) method using solid metal disks introduces considerable errors due to the microstructure inhomogeneity. To solve this problem, an aqueous solution XRF method is proposed for determining major amounts of Sb, Sn, Pb in lead-based bearing alloys. The alloy samples were dissolved by a mixture of nitric acid and tartaric acid to eliminated the effects of microstructure of these alloys on the XRF analysis. Rh Compton scattering was used as internal standard for Sb and Sn, and Bi was added as internal standard for Pb, to correct for matrix effects, instrumental and operational variations. High-purity lead, antimony and tin were used to prepare synthetic standards. Using these standards, calibration curves were constructed for the three elements after optimizing the spectrometer parameters. The method has been successfully applied to the analysis of lead-based bearing alloys and is more rapid than classical titration methods normally used. The determination results are consistent with certified values or those obtained by titrations.

Photoluminescence study of epitaxially grown ZnSnAs2:Mn thin films

International Nuclear Information System (INIS)

Mammadov, E; Haneta, M; Toyota, H; Uchitomi, N

2011-01-01

The photoluminescence (PL) properties of heavily Mn-doped ZnSnAs 2 layers epitaxially grown on nearly lattice-matched semi-insulating InP substrates are studied. PL spectra are obtained for samples with Mn concentrations of 5, 12 and 24 mol% relative to the combined concentrations of Zn and Sn. A broad emission band centered at ∼ 1 eV is detected for Mn-doped layers at room temperature. The emission is a intense broad asymmetric line at low temperatures. The line is reconstructed by superposition of two bands with peak energies of ∼ 0.99 and 1.07 eV, similar to those reported for InP. These bands are superimposed onto a 1.14 eV band with well-resolved phonon structure for the layer doped with 12 % Mn. Recombination mechanism involving the split-off band of the ZnSnAs 2 is suggested. Temperature dependence of integrated intensities of the PL bands indicates to thermally activated emission with activation energies somewhat different from those found for InP. Mn substitution at cationic sites increases the concentration of holes which may act as recombination centers. Recombination to the holes bound to Mn ions with the ground state located below the top of the valence band has been proposed as a possible PL mechanism.

Properties and Microstructures of Sn-Ag-Cu-X Lead-Free Solder Joints in Electronic Packaging

OpenAIRE

Sun, Lei; Zhang, Liang

2015-01-01

SnAgCu solder alloys were considered as one of the most popular lead-free solders because of its good reliability and mechanical properties. However, there are also many problems that need to be solved for the SnAgCu solders, such as high melting point and poor wettability. In order to overcome these shortcomings, and further enhance the properties of SnAgCu solders, many researchers choose to add a series of alloying elements (In, Ti, Fe, Zn, Bi, Ni, Sb, Ga, Al, and rare earth) and nanoparti...

Porous carbon-free SnSb anodes for high-performance Na-ion batteries

Science.gov (United States)

Choi, Jeong-Hee; Ha, Choong-Wan; Choi, Hae-Young; Seong, Jae-Wook; Park, Cheol-Min; Lee, Sang-Min

2018-05-01

A simple melt-spinning/chemical-etching process is developed to create porous carbon-free SnSb anodes. Sodium ion batteries (SIBs) incorporating these anodes exhibit excellent electrochemical performances by accomodating large volume changes during repeated cycling. The porous carbon-free SnSb anode produced by the melt-spinning/chemical-etching process shows a high reversible capacity of 481 mAh g-1, high ICE of 80%, stable cyclability with a high capacity retention of 99% after 100 cycles, and a fast rate capability of 327 mAh g-1 at 4C-rate. Ex-situ X-ray diffraction and high resolution-transmission electron microscopy analyses demonstrate that the synthesized porous carbon-free SnSb anodes involve the highly reversible reaction with sodium through the conversion and recombination reactions during sodiation/desodiation process. The novel and simple melt-spinning/chemical-etching synthetic process represents a technological breakthrough in the commercialization of Na alloy-able anodes for SIBs.

HYDROTALSIT Zn-Al-EDTA SEBAGAI ADSORBEN UNTUK POLUTAN ION Pb(II DI LINGKUNGAN Zn-Al-EDTA Hydrotalcite as Adsorbent for Pb(II Ion Pollutant in The Environment

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Roto Roto

2015-07-01

Full Text Available ABSTRAK Polusi ion Pb(II di dalam lingkungan perairan cenderung naik seiring peningkatan jumlah industri smelter dan daur ulang aki bekas. Penelitian ini bertujuan untuk menguji kemampuan hidrotalsit Zn-Al-EDTA sebagai adsorben ion Pb(II dalam air secara mendalam. Hidrotalsit Zn-Al-NO3 disintesis dengan metode kopresipitasi dan hidrotermal pada temperatur 100 °C selama 15 jam. Hidrotalsit Zn-Al-EDTA diperoleh dengan penukaran ion. Keasaman larutan, kinetika dan kapasitas adsorpsi diteliti. Hidrotalsit Zn-Al-EDTA memiliki d003 sebesar 14,52 Å sementara Zn-Al-NO3 sebesar 8,90 Å. Spektra FTIR menunjukkan keberadaan serapan gugus C=O pada bilangan gelombang 1684,77 cm-1. Kondisi optimum adsorpsi ion Pb(II terjadi pada pH 4, waktu kontak 60 menit dan kapasitas adsorpsi diperoleh 2,07 mg/g pada konsentrasi awal 10 mg/L dengan berat adsorben 0,100 g. Adsorpsi ion Pb(II oleh hidrotalsit Zn-Al-EDTA mengikuti reaksi pseudo orde dua dengan tetapan laju adsorpsi sebesar 8,90 g mmol-1min-1. Adsorpsi ion Pb(II oleh Zn-Al-EDTA terjadi karena  pembentukan khelat Pb-EDTA di dalam struktur hidrotalsit. Hasil ini diharapkan mampu memberikan kontribusi yang lebih luas di dalam pengendalian konsentrasi Pb(II di lingkungan. ABSTRACT Polution by Pb(II ion in the water environment tends to increase due the increase in the number of lead smelter and lead acid battery recycling industries. This work aims at studying in details the ability of Zn-Al-EDTA hydrotalcite as adsorbent for Pb(II ion in the environment. The Zn-Al-NO3 hydrotalcite was synthesized first by coprecipitation method followed by hydrothermal treatment at 100 °C for 15 h. The Zn-Al-EDTA hydrotalcite was later obtained by ion exchange process. The solution pH, kinetics and adsorption capacity were studied. The XRD data showed that Zn-Al-EDTA and Zn-Al-NO3 hydrotalcites have d003 of 14.52 and 8.90 Å, respectively. The FTIR spectra suggested that C=O group was observed with absorption band at 1684

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

Science.gov (United States)

Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

Structural and optical properties of Cu2ZnSnS4 thin film absorbers from ZnS and Cu3SnS4 nanoparticle precursors

International Nuclear Information System (INIS)

Lin, Xianzhong; Kavalakkatt, Jaison; Kornhuber, Kai; Levcenko, Sergiu; Lux-Steiner, Martha Ch.; Ennaoui, Ahmed

2013-01-01

Cu 2 ZnSnS 4 (CZTS) has been considered as an alternative absorber layer to Cu(In,Ga)Se 2 due to its earth abundant and environmentally friendly constituents, optimal direct band gap of 1.4–1.6 eV and high absorption coefficient in the visible range. In this work, we propose a solution-based chemical route for the preparation of CZTS thin film absorbers by spin coating of the precursor inks composed of Cu 3 SnS 4 and ZnS NPs and annealing in Ar/H 2 S atmosphere. X-ray diffraction and Raman spectroscopy were used to characterize the structural properties. The chemical composition was determined by energy dispersive X-ray spectroscopy. Optical properties of the CZTS thin film absorbers were studied by transmission, reflection and photoluminescence spectroscopy

Gas Sensing Studies of an n-n Hetero-Junction Array Based on SnO2 and ZnO Composites

Directory of Open Access Journals (Sweden)

Anupriya Naik

2016-02-01

Full Text Available A composite metal oxide semiconductor (MOS sensor array based on tin dioxide (SNO2 and zinc oxide (ZnO has been fabricated using a straight forward mechanical mixing method. The array was characterized using X-ray photoelectron spectroscopy, scanning electron microscopy, Raman spectroscopy and X-ray diffraction. The array was evaluated against a number of environmentally important reducing and oxidizing gases across a range of operating temperatures (300–500 °C. The highest response achieved was against 100 ppm ethanol by the 50 wt% ZnO–50 wt% SnO2 device, which exhibited a response of 109.1, a 4.5-fold increase with respect to the pure SnO2 counterpart (which displayed a response of 24.4 and a 12.3-fold enhancement with respect to the pure ZnO counterpart (which was associated with a response of 8.9, towards the same concentration of the analyte. Cross sensitivity studies were also carried out against a variety of reducing gases at an operating temperature of 300 °C. The sensors array showed selectivity towards ethanol. The enhanced behaviour of the mixed oxide materials was influenced by junction effects, composition, the packing structure and the device microstructure. The results show that it is possible to tune the sensitivity and selectivity of a composite sensor, through a simple change in the composition of the composite.

Probing the distribution and contamination levels of 10 trace metal/metalloids in soils near a Pb/Zn smelter in Middle China.

Science.gov (United States)

Li, Zhonggen; Feng, Xinbin; Bi, Xiangyang; Li, Guanghui; Lin, Yan; Sun, Guangyi

2014-03-01

The horizontal and vertical distribution patterns and contamination status of ten trace metal/metalloids (Ag, Bi, Co, Cr, Ge, In, Ni, Sb, Sn, Tl) in soils around one of the largest Chinese Pb-Zn smelter in Zhuzhou City, Central China, were revealed. Different soil samples were collected from 11 areas, including ten agricultural areas and one city park area, with a total of 83 surface soil samples and six soil cores obtained. Trace metal/metalloids were determined by inductively coupled plasma-mass spectrometry after digestion by an acid mixture of HF and HNO3. The results showed that Ag, Bi, In, Sb, Sn, and Tl contents decreased both with the distance to the Pb-Zn smelter as well as the soil depth, hinting that these elements were mainly originated from the Pb-Zn smelting operations and were introduced into soils through atmospheric deposition. Soil Ge was influenced by the smelter at a less extent, while the distributions of Co, Cr, and Ni were roughly even among most sampling sites and soil depths, suggesting that they were primarily derived from natural sources. The contamination status, as revealed by the geo-accumulation index (I geo), indicated that In and Ag were the most enriched elements, followed by Sb, Bi, and Sn. In general, Cr, Tl, Co, Ni, and Ge were of an uncontaminated status.

La5Zn2Sn

Directory of Open Access Journals (Sweden)

Igor Oshchapovsky

2011-11-01

Full Text Available A single crystal of pentalanthanum dizinc stannide, La5Zn2Sn, was obtained from the elements in a resistance furnace. It belongs to the Mo5SiB2 structure type, which is a ternary ordered variant of the Cr5B3 structure type. The space is filled by bicapped tetragonal antiprisms from lanthanum atoms around tin atoms sharing their vertices. Zinc atoms fill voids between these bicapped tetragonal antiprisms. All four atoms in the asymmetric unit reside on special positions with the following site symmetries: La1 (..m; La2 (4/m..; Zn (m.2m; Sn (422.

Oxidation and reduction kinetics of eutectic SnPb, InSn, and AuSn: a knowledge base for fluxless solder bonding applications

DEFF Research Database (Denmark)

Kuhmann, Jochen Friedrich; Preuss, A.; Adolphi, B.

1998-01-01

: (1) SnPb; (2) InSn; (3) AuSn. The studies of the oxidation kinetics show that the growth of the native oxide, which covers the solder surfaces from the start of all soldering operations is self-limiting. The rate of oxidation on the molten, metallic solder surfaces is significantly reduced...... and reduction kinetics, are applied to flip-chip (FC) bonding experiments in vacuum with and without the injection of H2. Wetting in vacuum is excellent but the self-alignment during flip-chip soldering is restricted. The desired, perfectly self-aligned FC-bonds have been only achieved, using evaporated...

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

Science.gov (United States)

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

The influence of precursor Cu content and two-stage processing conditions on the microstructure of Cu{sub 2}ZnSnSe{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Márquez-Prieto, J., E-mail: jose.prieto@northumbria.ac.uk [Northumbria Photovoltaic Application Centre, Faculty of Engineering and Environment, Northumbria University, Ellison Building, Newcastle upon Tyne NE1 8ST (United Kingdom); Ren, Y. [Ångström Solar Center, Solid State Electronics, Uppsala University, Uppsala 751 21 (Sweden); Miles, R.W.; Pearsall, N.; Forbes, I. [Northumbria Photovoltaic Application Centre, Faculty of Engineering and Environment, Northumbria University, Ellison Building, Newcastle upon Tyne NE1 8ST (United Kingdom)

2015-05-01

This paper reports the influence of processing temperature on the microstructure of Cu{sub 2}ZnSnSe{sub 4} (CZTSe) absorber layers for temperatures between 380 and 550 °C produced using a 2-stage process. X-ray diffraction analysis showed the formation of Cu{sub 2}ZnSnSe{sub 4} over this temperatures range. The Williamson-Hall method was used for microstructural analysis of the CZTSe absorbers, and this showed a progressive decrease of the micro-strain of the CZTSe with increasing selenisation temperature. The influence of precursor Cu content on the microstructure of the CZTSe was also studied. An increase of Cu content in the precursor is correlated to an increase in grain size and a decrease in micro-strain. Raman measurements show an asymmetrical broadening towards lower energies of the main 197 cm{sup −1} mode for Cu-poor compositions. This study provides an insight into the dependency of the crystallinity of CZTSe on composition and synthesis temperature. - Highlights: • We fabricate Cu{sub 2}ZnSnSe{sub 4} thin films by sputtering and post-reactive annealing. • The micro-strain of Cu{sub 2}ZnSnSe{sub 4} increases when Cu content decreases. • The micro-strain of Cu{sub 2}ZnSnSe{sub 4} decreases with increasing processing temperature. • The defect concentration of Cu{sub 2}ZnSnSe{sub 4} increases when Cu content decreases.

UV N{sub 2} laser ablation of a Cu-Sn-Zn-Pb alloy: Microstructure and topography studied by focused ion beam

Energy Technology Data Exchange (ETDEWEB)

Zupanic, Franc [University of Maribor, Faculty of Mechanical Engineering, University Centre for Electron Microscopy, Smetanova 17, SI-2000 Maribor (Slovenia)], E-mail: franc.zupanic@uni-mb.si; Boncina, Tonica [University of Maribor, Faculty of Mechanical Engineering, University Centre for Electron Microscopy, Smetanova 17, SI-2000 Maribor (Slovenia); Pipic, Davor; Henc-Bartolic, Visnja [University of Zagreb, Faculty of Electrical Engineering and Computing, Department of Applied Physics, Unska 3, 10000 Zagreb (Croatia)

2008-10-06

A Cu-Sn-Zn-Pb alloy was irradiated by ultraviolet nitrogen laser pulses (N{sub 2} laser, wavelength 337 nm, pulse duration 6 ns, frequency 1 Hz, power 0.5 MW and average power density 0.67 GW/m{sup 2}). The surface topography and microstructure were mainly studied by scanning electron microscopy, and a focused ion beam. The non-homogenized spatial beam profile resulted in the activation of several ablative mechanisms, the main being phase explosion and hydrodynamic instability. They caused a crater to be formed, surrounded by a raised rim and wavelike structure in a halo. FIB cross-sectioning and imaging showed a shallow (few micrometers) molten and resolidified surface layer. Streaks were observed in the heat-affected zone beneath the molten layer, indicating partial recrystallization of initially cold-worked material.

Band alignment of type I at (100ZnTe/PbSe interface

Directory of Open Access Journals (Sweden)

Igor Konovalov

2016-06-01

Full Text Available A junction of lattice-matched cubic semiconductors ZnTe and PbSe results in a band alignment of type I so that the narrow band gap of PbSe is completely within the wider band gap of ZnTe. The valence band offset of 0.27 eV was found, representing a minor barrier during injection of holes from PbSe into ZnTe. Simple linear extrapolation of the valence band edge results in a smaller calculated band offset, but a more elaborate square root approximation was used instead, which accounts for parabolic bands. PbSe was electrodeposited at room temperature with and without Cd2+ ions in the electrolyte. Although Cd adsorbs at the surface, the presence of Cd in the electrolyte does not influence the band offset.

Nanocrystalline transparent SnO{sub 2}-ZnO films fabricated at lower substrate temperature using a low-cost and simplified spray technique

Energy Technology Data Exchange (ETDEWEB)

Ravichandran, K.; Sakthivel, B.; Philominathan, P. [P. G. and Research Department of Physics, AVVM. Sri Pushpam College, Poondi, Thanjavur, Tamilnadu 613503 (India)

2010-03-15

Nanocrystalline and transparent conducting SnO{sub 2}- ZnO films were fabricated by employing an inexpensive, simplified spray technique using a perfume atomizer at relatively low substrate temperature (360{+-}5 C) compared with conventional spray method. The structural studies reveal that the SnO{sub 2}-ZnO films are polycrystalline in nature with preferential orientation along the (101) plane. The dislocation density is very low (1.48 x 10{sup 15}lines/m{sup 2}), indicating the good crystallinity of the films. The crystallite size of the films was found to be in the range of 26-34 nm. The optical transmittance in the visible range and the optical band gap are 85% and 3.6 eV respectively. The sheet resistance increases from 8.74 k{omega}/{open_square} to 32.4 k{omega}/{open_square} as the zinc concentration increases from 0 to 40 at.%. The films were found to have desirable figure of merit (1.63 x 10{sup -2} ({omega}/{open_square}){sup -1}), low temperature coefficient of resistance (-1.191/K) and good thermal stability. This simplified spray technique may be considered as a promising alternative to conventional spray for the massive production of economic SnO{sub 2} - ZnO films for solar cells, sensors and opto-electronic applications. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Low resistivity ZnO-GO electron transport layer based CH3NH3PbI3 solar cells

Directory of Open Access Journals (Sweden)

Muhammad Imran Ahmed

2016-06-01

Full Text Available Perovskite based solar cells have demonstrated impressive performances. Controlled environment synthesis and expensive hole transport material impede their potential commercialization. We report ambient air synthesis of hole transport layer free devices using ZnO-GO as electron selective contacts. Solar cells fabricated with hole transport layer free architecture under ambient air conditions with ZnO as electron selective contact achieved an efficiency of 3.02%. We have demonstrated that by incorporating GO in ZnO matrix, low resistivity electron selective contacts, critical to improve the performance, can be achieved. We could achieve max efficiency of 4.52% with our completed devices for ZnO: GO composite. Impedance spectroscopy confirmed the decrease in series resistance and an increase in recombination resistance with inclusion of GO in ZnO matrix. Effect of temperature on completed devices was investigated by recording impedance spectra at 40 and 60 oC, providing indirect evidence of the performance of solar cells at elevated temperatures.

Photosensitive thin-film In/p-Pb{sub x}Sn{sub 1-x}S Schottky barriers: Fabrication and properties

Energy Technology Data Exchange (ETDEWEB)

Gremenok, V. F., E-mail: gremenok@ifttp.bas-net.by [Scientific-Practical Center of the National Academy of Sciences of Belarus State Scientific and Production Association (Belarus); Rud' , V. Yu., E-mail: rudvas.spb@gmail.com [St. Petersburg State Polytechnic University (Russian Federation); Rud' , Yu. V. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Bashkirov, S. A.; Ivanov, V. A. [Scientific-Practical Center of the National Academy of Sciences of Belarus State Scientific and Production Association (Belarus)

2011-08-15

Thin Pb{sub x}Sn{sub 1-x}S films are obtained by the 'hot-wall' method at substrate temperatures of 210-330 Degree-Sign C. The microstructure, composition, morphology, and electrical characteristics of films are investigated. On the basis of the obtained films, photosensitive In/p-Pb{sub x}Sn{sub 1-x}S Schottky barriers are fabricated for the first time. The photosensivity spectra of these structures are investigated, and the character of interband transitions and the band-gap values are determined from them. The conclusion is drawn that Pb{sub x}Sn{sub 1-x}S thin polycrystalline films may be used in solar-energy converters.

Spectroscopic ellipsometry study of Cu2ZnSnS4 bulk poly-crystals

Science.gov (United States)

Levcenko, S.; Hajdeu-Chicarosh, E.; Garcia-Llamas, E.; Caballero, R.; Serna, R.; Bodnar, I. V.; Victorov, I. A.; Guc, M.; Merino, J. M.; Pérez-Rodriguez, A.; Arushanov, E.; León, M.

2018-04-01

The linear optical properties of Cu2ZnSnS4 bulk poly-crystals have been investigated using spectroscopic ellipsometry in the range of 1.2-4.6 eV at room temperature. The characteristic features identified in the optical spectra are explained by using the Adachi analytical model for the interband transitions at the corresponding critical points in the Brillouin zone. The experimental data have been modeled over the entire spectral range taking into account the lowest E0 transition near the fundamental absorption edge and E1A and E1B higher energy interband transitions. In addition, the spectral dependences of the refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity values have been accurately determined and are provided since they are essential data for the design of Cu2ZnSnS4 based optoelectronic devices.

Study of photocatalytic asset of the ZnSnO3 synthesized by green chemistry

Directory of Open Access Journals (Sweden)

Ashok V. Borhade

2017-02-01

Full Text Available In this paper, we report a simple one-step mechanochemical synthesis method with a green chemistry approach for a light-induced heterogeneous oxide photocatalyst, ZnSnO3. The catalyst was characterized by various investigative techniques, like Infrared Fourier Transform Spectroscopy, Diffused Reflectance UV–visible Spectroscopy, X-ray Diffraction, Scanning Electron Microscopy, Tunnelling Electron Microscopy, and Thermogravimetric analysis to carry out structural and spectroscopic properties of the photocatalyst. The synthesized ZnSnO3 particles had an average size of 105 nm with a band gap of 3.34 eV. The photocatalyst was thermally stable over a wide range of temperatures. The sunlight mediated degradation of Methyl blue, Indigo carmine and Acid violet dyes were achieved by using ZnSnO3.

Switching Characteristics and High-Temperature Dielectric Relaxation Behaviours of Pb(Zn1/3Nb2/3)0.91Ti0.09O₃ Single Crystal.

Science.gov (United States)

Zhu, Zhi; Tang, Xingui; Jiang, Yanping; Liu, Qiuxiang; Zhang, Tianfu; Li, Wenhua

2017-03-28

This work evaluated the resistance switching characteristics in the (100)-oriented Pb(Zn 1/3 Nb 2/3 ) 0.91 Ti 0.09 O₃ (PZNT) single crystal. The current hysteresis can be closely related to the ferroelectric polarization and we provided a possible explanation using a model about oxygen vacancies to analyze the mechanism of switching. The obvious frequency dispersion of the relative permittivity signified the relaxer-type behavior of the sample. The value of the relaxation parameter γ = 1.48 was estimated from the linear fit of the modified Curie-Weiss law, indicating the relaxer nature. High-temperature dielectric relaxation behaviors were revealed in the temperature region of 400-650 °C. In addition, under the measuring frequency of 10 kHz, ε r was tunable by changing the electric field and the largest tunability of ε r reached 14.78%. At room temperature, the high pyroelectric coefficient and detectivity figure of merit were reported.

Wetting behaviour of lead-free Sn-based alloys on Cu and Ni substrates

International Nuclear Information System (INIS)

Amore, S.; Ricci, E.; Borzone, G.; Novakovic, R.

2008-01-01

The present work was carried out in the framework of the study of new lead-free solder alloys for technical applications in electronic devices. In the focus of this characterisation the wetting behaviour of several Sn-rich alloys belonging to the In-Sn, Au-Sn and Cu-Sn systems has been studied by measuring the contact angle variations on Cu and Ni substrates as a function of time and temperature. The interface between the alloy and the substrate has been analysed by the use of optical microscopy and scanning electron microscopy combined with energy-dispersive X-ray spectrometry in order to study the reaction between the alloy and the solid substrate and the possible formation of different compounds at the interface. A remarkable effect of the two different substrates on the behaviour of the contact angle as a function of temperature and on the morphology of the interface between the liquid solder and the solid substrate was observed for the In-Sn and Cu-Sn, while the Au-Sn system shows a very similar wetting behaviour on Cu and Ni

Oxidation and Reduction of Liquid SnPb (60/40) under Ambient and Vacuum Conditions

DEFF Research Database (Denmark)

Kuhmann, Jochen Friedrich; Maly, K.; Preuss, A.

1998-01-01

One of the most straightforward approaches to fluxless solder bonding is using vacuum conditions to prevent further oxidation and, where needed, to reduce solder oxides by the use of molecular hydrogen (H-2).(1-3) This study On oxidation and reduction of solder oxides on SnPb (60/40) is aimed...... to provide a better understanding for fluxless solder bonding applications under controlled atmospheric conditions; By means of scanning Auger spectroscopy it is shown, that growth of oxide films on metallic SnPb above the eutectic temperature can be significantly reduced by decreasing the O-2 partial...

Effects of Zn2+ and Pb2+ dopants on the activity of Ga2O3-based photocatalysts for water splitting.

Science.gov (United States)

Wang, Xiang; Shen, Shuai; Jin, Shaoqing; Yang, Jingxiu; Li, Mingrun; Wang, Xiuli; Han, Hongxian; Li, Can

2013-11-28

Zn-doped and Pb-doped β-Ga2O3-based photocatalysts were prepared by an impregnation method. The photocatalyst based on the Zn-doped β-Ga2O3 shows a greatly enhanced activity in water splitting while the Pb-doped β-Ga2O3 one shows a dramatic decrease in activity. The effects of Zn(2+) and Pb(2+) dopants on the activity of Ga2O3-based photocatalysts for water splitting were investigated by HRTEM, XPS and time-resolved IR spectroscopy. A ZnGa2O4-β-Ga2O3 heterojunction is formed in the surface region of the Zn-doped β-Ga2O3 and a slower decay of photogenerated electrons is observed. The ZnGa2O4-β-Ga2O3 heterojunction exhibits type-II band alignment and facilitates charge separation, thus leading to an enhanced photocatalytic activity for water splitting. Unlike Zn(2+) ions, Pb(2+) ions are coordinated by oxygen atoms to form polyhedra as dopants, resulting in distorted surface structure and fast decay of photogenerated electrons of β-Ga2O3. These results suggest that the Pb dopants act as charge recombination centers expediting the recombination of photogenerated electrons and holes, thus decreasing the photocatalytic activity.

Thermodynamics and kinetics insight into reaction mechanism of Cu{sub 2}ZnSnSe{sub 4} nanoink based on binary metal-amine complexes in polyetheramine-synthesized process

Energy Technology Data Exchange (ETDEWEB)

Wang, Chi-Jie [Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Shei, Shih-Chang, E-mail: scshei@mail.nutn.edu.tw [Department of Electrical Engineering, National University of Tainan, 700, Taiwan, ROC (China); Chang, Shoou-Jinn [Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

2016-08-15

This paper reports on the reaction mechanism of Cu{sub 2}ZnSnSe{sub 4} (CZTSe) nanoink via a solvent-thermal reflux method using copper (Cu), zinc (Zn), tin (Sn), and selenium (Se) powders as precursors and polyetheramine as a reaction solvent. The formation of CZTSe nanoparticles in polyetheramine began with the formation of binary phase CuSe and CuSe{sub 2} due to the strong catalysis provided by polyetheramine. Finally, ternary crystals of Cu{sub 2}SnSe{sub 3} transformed into well-dispersed nanocrystals of Cu{sub 2}ZnSnSe{sub 4}. The size of the crystals was shown to decrease with reaction time due to the emulsification effect of the polyetheramine epoxy group. The PH value-reaction time curves for single Cu, Zn elements and CZTSe from all participants elements reacted together have a relationship just reversed each other and both multistage feature were observed, which indicates that the CZTSe reaction was dominated by copper and zinc elements. The PH-temperature mechanism demonstrates that the reaction was controlled by the formation of metal-amine complexes, especially, after heating the PH-time variation manner is the same for pure element and all four elements reacted together. To the best of our knowledge, this is the first study on the mechanism underlying CZTSe formation based on the reactivity and stability of reaction species. - Highlights: • Reaction mechanism of Cu{sub 2}ZnSnSe{sub 4} (CZTSe) nanoink via a solvent-thermal reflux method using polyetheramine was developed. • PH effect on thermal dynamics and characteristics of reagents and solvents in the CZTSe nanoink has been realized. • PH-temperature mechanism demonstrates that the reaction controlled by the formation of metal-amine complexes.

Synthesis, characterization and photocatalytic activity of ZnO-SnO2 nanocomposites

International Nuclear Information System (INIS)

Hamrouni, Abdessalem; Lachheb, Hinda; Houas, Ammar

2013-01-01

Highlights: • ZnO-SnO 2 photocatalysts were prepared successfully by the coprecipitation method. • The best conditions found are: calcination at 600 °C/2 h; molar ratio Zn/Sn = 1/0.05. • The lower tin content in the samples led to the higher photocatalytic activity. • Zn-Sn 0.05 photoactivity under solar light was better than visible lamps light. -- Abstract: Nanocomposites of coupled ZnO-SnO 2 photocatalysts were synthesized by the coprecipitation method and were characterized by X-ray diffraction, UV–vis diffuse reflectance spectroscopy, surface area analyzer and scanning electron microscopy. Their photocatalytic activity was investigated under UV, visible and solar light and evaluated using methylene blue (MB) as a model pollutant. The performance of the coupled ZnO-SnO 2 photocatalysts was found to be related to the Zn/Sn molar ratio and to the calcination conditions. The photocatalyst with a Zn/Sn molar ratio of 1:0.05 calcined at 600 °C for 2 h showed the maximum degradation rate of MB under different lights used. Its photocatalytic activity was found to be about two times that of ZnO and about 10 times that of SnO 2 which can be explained by the heterojunction effect. Charge separation mechanism has been studied

SnO2/ZnO composite structure for the lithium-ion battery electrode

International Nuclear Information System (INIS)

Ahmad, Mashkoor; Yingying, Shi; Sun, Hongyu; Shen, Wanci; Zhu, Jing

2012-01-01

In this article, SnO 2 /ZnO composite structures have been synthesized by two steps hydrothermal method and investigated their lithium storage capacity as compared with pure ZnO. It has been found that these composite structures combining the large specific surface area, stability and catalytic activity of SnO 2 micro-crystals, demonstrate the higher initial discharge capacity of 1540 mA h g −1 with a Coulombic efficiency of 68% at a rate of 120 mA h g −1 between 0.02 and 2 V and found much better than that of any previously reported ZnO based composite anodes. In addition, a significantly enhanced cycling performance, i.e., a reversible capacity of 497 mA h g −1 is retained after 40 cycles. The improved lithium storage capacity and cycle life is attributed to the addition of SnO 2 structure, which act as good electronic conductors and better accommodation of the large volume change during lithiation/delithiation process. - Graphical abstract: SnO 2 /ZnO composite structures demonstrate the improved lithium storage capacity and cycle life as compared with pure ZnO nanostructure. Highlights: ► Synthesis of SnO 2 /ZnO composite structures by two steps hydrothermal approach. ► Investigation of lithium storage capacity. ► Excellent lithium storage capacity and cycle life of SnO 2 /ZnO composite structures.

The growth of nanostructured Cu{sub 2}ZnSnS{sub 4} films by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Che Sulaiman, Nurul Suhada; Nee, Chen Hon [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Yap, Seong Ling [Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Lee, Yen Sian [UM Power Energy Dedicated Advanced Centre (UMPEDAC), University of Malaya, 50603 Kuala Lumpur (Malaysia); Tou, Teck Yong [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Yap, Seong Shan, E-mail: seongshan@gmail.com [UM Power Energy Dedicated Advanced Centre (UMPEDAC), University of Malaya, 50603 Kuala Lumpur (Malaysia)

2015-11-01

Highlights: • Nanostructured CZTS films were grown at room temperature by using 355 nm laser. • CZTS films with E{sub g} of 1.9 eV have been obtained at 2 J cm{sup −2} at room temperature. • At high fluence, Cu/Sn rich droplets affected the overall quality of the films. • Improved crystallinity and E{sub g} of 1.5 eV was obtained at substrate temperature as low as 100 °C. - Abstract: In this work, we investigated on the growth of Cu{sub 2}ZnSnS{sub 4} films by using pulsed Nd:YAG laser (355 nm) ablation of a quaternary Cu{sub 2}ZnSnS{sub 4} target. Depositions were performed at laser fluence from 0.5 to 4 J cm{sup −2}. The films were grown at substrate temperature from 27 °C to 300 °C onto glass and silicon substrates. The dependence of the film morphology, composition, and optical properties are studied and discussed with respect to laser fluence and substrate temperature. Composition analysis from energy dispersive X-ray spectral results show that CZTS films with composition near stoichiometric were obtained at an optimized fluence at 2 J cm{sup −2} by 355 nm laser where the absorption coefficient is >10{sup 4} cm{sup −1}, and optical band gap from a Tauc plot was ∼1.9 eV. At high fluence, Cu and Sn rich droplets were detected which affect the overall quality of the films. The presence of the droplets was associated to the high degree of preferential and subsurface melting on the target during high fluence laser ablation. Crystallinity and optical band gap (1.5 eV) were improved when deposition was performed at substrate temperature of 100 °C.

The electrical properties of n-ZnO/p-SnO heterojunction diodes

Science.gov (United States)

Javaid, K.; Xie, Y. F.; Luo, H.; Wang, M.; Zhang, H. L.; Gao, J. H.; Zhuge, F.; Liang, L. Y.; Cao, H. T.

2016-09-01

In the present work, n-type zinc oxide (ZnO) and p-type tin monoxide (SnO) based heterostructure diodes were fabricated on an indium-tin-oxide glass using the radio frequency magnetron sputtering technique. The prepared ZnO/SnO diodes exhibited a typical rectifying behavior, with a forward to reverse current ratio about 500 ± 5 at 2 V and turn on voltage around 1.6 V. The built-in voltage of the diode was extracted to be 0.5 V based on the capacitance-voltage (C-V) measurement. The valence and conduction band offsets were deliberated through the band energy diagram of ZnO/SnO heterojunction, as 1.08 eV and 0.41 eV, respectively. The potential barrier-dependent carrier transportation mechanism across the space charge region was also investigated.

Synthesis of chelating agent free-solid phase extractor (CAF-SPE) based on new SiO{sub 2}/Al{sub 2}O{sub 3}/SnO{sub 2} ternary oxide and application for online preconcentration of Pb{sup 2+} coupled with FAAS

Energy Technology Data Exchange (ETDEWEB)

Tarley, César R.T.; Scheel, Guilherme L.; Zappielo, Caroline D.; Suquila, Fabio A.C., E-mail: ctarleyquim@yahoo.com.br [Universidade Estadual de Londrina (UEL), PR (Brazil). Dept. de Química; Ribeiro, Emerson S. [Universidade Federal do Rio de Janeiro (UFRJ), RJ (Brazil). Grupo LaDANM

2018-05-01

A new online solid phase preconcentration method using the new SiO{sub 2}/Al2O{sub 3}/SnO{sub 2} ternary oxide (designated as SiAlSn) as chelating agent free-solid phase extractor (CAF-SPE) coupled to flame atomic absorption spectrometry (FAAS) for Pb{sup 2+} determination at trace levels in different kind of samples is proposed. The solid adsorbent has been characterized by Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray fluorescence spectroscopy (XRF) and textural data. The method involves the preconcentration using time-based sampling of Pb{sup 2+} solution at pH 4.3 through 100.0 mg of packed adsorbed into a mini-column under flow rate of 4.0 mL min{sup -1} during 5 min. The elution step was accomplished by using 1.0 mol L{sup -1} HCl. A wide range of analytical curve (5.0-400.0 μg L{sup -1}), high enrichment factor (40.5), low consumption index (0.5 mL) and low limits of quantification and detection, 5.0 and 1.5 μg L{sup -1}, respectively, were obtained with the developed method. Practical application of method was tested on water samples, chocolate powder, Ginkgo biloba and sediment (certified reference material). On the basis of the results, the SiAlSn can be considered an effective adsorbent belonging to the class of CAF-SPE for Pb{sup 2+} determination from different matrices. (author)

Cd-diffused Pb/sub 1-x/Sn/sub x/Te lasers with high output

International Nuclear Information System (INIS)

Lo, W.

1976-01-01

Cd-diffused Pb 1 /sub -//subx/Sn/subx/Te (xapprox.0.13) diode lasers have been fabricated with cw output powers of 1.25 mW (single mode) and 2.4 mW (total) at 10.6 μm. These power levels are attributed to the low-temperature Cd diffusion, a new method of growing low-dislocation-density crystals, and to a contact resistance as low as 3x10 -5 Ω cm 2 . Multimode emission spectra are common for cw operation, but reducing the cavity width encourages single-mode emission, indicating the filamentary nature of modes in these devices

Thermodynamics of Pb(ii) and Zn(ii) binding to MT-3, a neurologically important metallothionein.

Science.gov (United States)

Carpenter, M C; Shami Shah, A; DeSilva, S; Gleaton, A; Su, A; Goundie, B; Croteau, M L; Stevenson, M J; Wilcox, D E; Austin, R N

2016-06-01

Isothermal titration calorimetry (ITC) was used to quantify the thermodynamics of Pb(2+) and Zn(2+) binding to metallothionein-3 (MT-3). Pb(2+) binds to zinc-replete Zn7MT-3 displacing each zinc ion with a similar change in free energy (ΔG) and enthalpy (ΔH). EDTA chelation measurements of Zn7MT-3 and Pb7MT-3 reveal that both metal ions are extracted in a tri-phasic process, indicating that they bind to the protein in three populations with different binding thermodynamics. Metal binding is entropically favoured, with an enthalpic penalty that reflects the enthalpic cost of cysteine deprotonation accompanying thiolate ligation of the metal ions. These data indicate that Pb(2+) binding to both apo MT-3 and Zn7MT-3 is thermodynamically favourable, and implicate MT-3 in neuronal lead biochemistry.

Solution-Grown CsPbBr3 /Cs4 PbBr6 Perovskite Nanocomposites: Toward Temperature-Insensitive Optical Gain.

Science.gov (United States)

Wang, Yue; Yu, Dejian; Wang, Zeng; Li, Xiaoming; Chen, Xiaoxuan; Nalla, Venkatram; Zeng, Haibo; Sun, Handong

2017-09-01

With regards to developing miniaturized coherent light sources, the temperature-insensitivity in gain spectrum and threshold is highly desirable. Quantum dots (QDs) are predicted to possess a temperature-insensitive threshold by virtue of the separated electronic states; however, it is never observed in colloidal QDs due to the poor thermal stability. Besides, for the classical II-VI QDs, the gain profile generally redshifts with increasing temperature, plaguing the device chromaticity. Herein, this paper addresses the above two issues simultaneously by embedding ligands-free CsPbBr 3 nanocrystals in a wider band gap Cs 4 PbBr 6 matrix by solution-phase synthesis. The unique electronic structures of CsPbBr 3 nanocrystals enable temperature-insensitive gain spectrum while the lack of ligands and protection from Cs 4 PbBr 6 matrix ensure the thermal stability and high temperature operation. Specifically, a color drift-free stimulated emission irrespective of temperature change (20-150 °C) upon two-photon pumping is presented and the characteristic temperature is determined to be as high as ≈260 K. The superior gain properties of the CsPbBr 3 /Cs 4 PbBr 6 perovskite nanocomposites are directly validated by a vertical cavity surface emitting laser operating at temperature as high as 100 °C. The results shed light on manipulating optical gain from the advantageous CsPbBr 3 nanocrystals and represent a significant step toward the temperature-insensitive frequency-upconverted lasers. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers

International Nuclear Information System (INIS)

Mita, Yoh; Kuronuma, Ryoichi; Inoue, Masanori; Sasaki, Shoichiro; Miyamoto, Yoshinobu

2004-01-01

The characteristic green photoluminescence emission and related phenomena in Pb-doped, molecular-beam-epitaxy (MBE)-grown ZnSe crystal layers were investigated to explore the nature of the center responsible for the green emission. The intensity of the green emission showed a distinct nonlinear dependence on excitation intensity. Pb-diffused polycrystalline ZnSe was similarly examined for comparison. The characteristic green emission has been observed only in MBE-grown ZnSe crystal layers with moderate Pb doping. The results of the investigations on the growth conditions, luminescence, and related properties of the ZnSe crystal layers suggest that the green emission is due to isolated Pb replacing Zn and surrounded with regular ZnSe lattice with a high perfection

Mineralogical, textural, sulfur and lead isotope constraints on the origin of Ag-Pb-Zn mineralization at Bianjiadayuan, Inner Mongolia, NE China

Science.gov (United States)

Zhai, Degao; Liu, Jiajun; Cook, Nigel J.; Wang, Xilong; Yang, Yongqiang; Zhang, Anli; Jiao, Yingchun

2018-04-01

The Bianjiadayuan Ag-Pb-Zn deposit (4.81 Mt. @157.4 g/t Ag and 3.94% Pb + Zn) is located in the Great Hinggan Range Pb-Zn-Ag-Cu-Mo-Sn-Fe polymetallic metallogenic belt, NE China. Vein type Pb-Zn-Ag ore bodies are primarily hosted by slate, adjacent to a Sn ± Cu ± Mo mineralized porphyry intrusion. The deposit is characterized by silver-rich ores with Ag grades up to 3000 g/t. Four primary paragenetic sequences are recognized: (I) arsenopyrite + pyrite + quartz, (II) main sulfide + quartz, (III) silver-bearing sulfosalt + quartz, and (IV) boulangerite + calcite. A subsequent supergene oxidation stage has also been identified. Hydrothermal alteration consists of an early episode of silicification, two intermediate episodes (propylitic and phyllic), and a late argillic episode. Silver mineralization primarily belongs to the late paragenetic sequence III. Freibergite is the dominant and most important Ag-mineral in the deposit. Detailed ore mineralogy of Bianjiadayuan freibergite reveals evidence of chemical heterogeneity down to the microscale. Silver-rich sulfosalts in the late paragenetic sequence III are largely derived from a series of retrograde and solid-state reactions that redistribute Ag via decomposition and exsolution during cooling, illustrating that documentation of post-mineralization processes is essential for understanding silver ore formation. Sulfur and lead isotope compositions of sulfides, and comparison with those of local various geological units, indicate that the ore-forming fluids, lead, and other metals have a magmatic origin, suggesting a close genetic association between the studied Ag-Pb-Zn veins and the local granitic intrusion. Fluid cooling coupled with decreases in fO2 and fS2 are the factors inferred to have led to a decrease of silver solubility in the hydrothermal fluid, and successively promoted extensive Ag deposition.

Solar cells with PbS quantum dot sensitized TiO2-multiwalled carbon nanotube composites, sulfide-titania gel and tin sulfide coated C-fabric.

Science.gov (United States)

Kokal, Ramesh K; Deepa, Melepurath; Kalluri, Ankarao; Singh, Shrishti; Macwan, Isaac; Patra, Prabir K; Gilarde, Jeff

2017-10-04

Novel approaches to boost quantum dot solar cell (QDSC) efficiencies are in demand. Herein, three strategies are used: (i) a hydrothermally synthesized TiO 2 -multiwalled carbon nanotube (MWCNT) composite instead of conventional TiO 2 , (ii) a counter electrode (CE) that has not been applied to QDSCs until now, namely, tin sulfide (SnS) nanoparticles (NPs) coated over a conductive carbon (C)-fabric, and (iii) a quasi-solid-state gel electrolyte composed of S 2- , an inert polymer and TiO 2 nanoparticles as opposed to a polysulfide solution based hole transport layer. MWCNTs by virtue of their high electrical conductivity and suitably positioned Fermi level (below the conduction bands of TiO 2 and PbS) allow fast photogenerated electron injection into the external circuit, and this is confirmed by a higher efficiency of 6.3% achieved for a TiO 2 -MWCNT/PbS/ZnS based (champion) cell, compared to the corresponding TiO 2 /PbS/ZnS based cell (4.45%). Nanoscale current map analysis of TiO 2 and TiO 2 -MWCNTs reveals the presence of narrowly spaced highly conducting domains in the latter, which equips it with an average current carrying capability greater by a few orders of magnitude. Electron transport and recombination resistances are lower and higher respectively for the TiO 2 -MWCNT/PbS/ZnS cell relative to the TiO 2 /PbS/ZnS cell, thus leading to a high performance cell. The efficacy of SnS/C-fabric as a CE is confirmed from the higher efficiency achieved in cells with this CE compared to the C-fabric based cells. Lower charge transfer and diffusional resistances, slower photovoltage decay, high electrical conductance and lower redox potential impart high catalytic activity to the SnS/C-fabric assembly for sulfide reduction and thus endow the TiO 2 -MWCNT/PbS/ZnS cell with a high open circuit voltage (0.9 V) and a large short circuit current density (∼20 mA cm -2 ). This study attempts to unravel how simple strategies can amplify QDSC performances.

Structural, morphological and electrical properties of Sn-substituted Ni-Zn ferrites synthesized by double sintering technique

Energy Technology Data Exchange (ETDEWEB)

Ali, M.A. [Department of Physics, Chittagong University of Engineering and Technology (CUET), Chittagong 4349 (Bangladesh); Uddin, M.M., E-mail: mohi@cuet.ac.bd [Department of Physics, Chittagong University of Engineering and Technology (CUET), Chittagong 4349 (Bangladesh); Khan, M.N.I. [Materials Science Division, Atomic Energy Center, Dhaka 1000 (Bangladesh); Chowdhury, F.U.-Z. [Department of Physics, Chittagong University of Engineering and Technology (CUET), Chittagong 4349 (Bangladesh); Haque, S.M. [Materials Science Division, Atomic Energy Center, Dhaka 1000 (Bangladesh)

2017-02-15

The Sn-substituted Ni-Zn ferrites, (0.0≤x≤0.30), have been synthesized by the standard double sintering technique from the oxide nanopowders of Ni, Zn, Fe and Sn. The structural and electrical properties have been investigated by the X-ray diffraction (XRD), scanning electron microscopy (SEM), DC resistivity and dielectric measurements. From XRD data, the single cubic spinel phase has been confirmed for x≤0.1, whereas for x>0.1 an extra intermediate phase has been detected along with the cubic spinel phase of Ni-Zn ferrite. The grain size is increased due to Sn substitution in Ni-Zn ferrites. DC resistivity as a function of temperature has been measured by two probe method. The semiconducting nature has been found operative in the samples. The DC resistivity was found to decrease whilst the dielectric constant increased with increasing Sn content in Ni-Zn ferrites. The unusual behavior of the dielectric loss factor of the ferrites was explained by the Rezlescu model. The electrical relaxation of the ferrites has been studied in terms of electric modulus formalism and the time for dielectric relaxation was calculated. The contribution of grain resistance has been studied from the Cole-Cole plot. The suitability to use the as prepared samples in the miniaturized memory devices based capacitive components or energy storage principles are confirmed from the values of dielectric constant. - Highlights: • Sn-substituted Ni-Zn ferrites with cubic spinel structure have been synthesized. • a{sub th} is calculated and well compared with a{sub expt}. • Dielectric unusual behavior has been successfully explained by the Rezlescu model. • Long τ (ns) is determined, can be utilized for memory and spintronics devices.

In-situ study of electromigration-induced grain rotation in Pb-free solder joint by synchrotron microdiffraction

International Nuclear Information System (INIS)

Chen, Kai; Tamura, Nobumichi; Tu, King-Ning

2008-01-01

The rotation of Sn grains in Pb-free flip chip solder joints hasn't been reported in literature so far although it has been observed in Sn strips. In this letter, we report the detailed study of the grain orientation evolution induced by electromigration by synchrotron based white beam X-ray microdiffraction. It is found that the grains in solder joint rotate more slowly than in Sn strip even under higher current density. On the other hand, based on our estimation, the reorientation of the grains in solder joints also results in the reduction of electric resistivity, similar to the case of Sn strip. We will also discuss the reason why the electric resistance decreases much more in strips than in the Sn-based solders, and the different driving force for the grain growth in solder joint and in thin film interconnect lines

Study of interfacial reactions in Sn-3.5Ag-3.0Bi and Sn-8.0Zn-3.0Bi sandwich structure solder joint with Ni(P)/Cu metallization on Cu substrate

International Nuclear Information System (INIS)

Sun, Peng; Andersson, Cristina; Wei, Xicheng; Cheng, Zhaonian; Shangguan, Dongkai; Liu, Johan

2007-01-01

In this paper, the coupling effect in Sn-3.5Ag-3.0Bi and Sn-8.0Zn-3.0Bi solder joint with sandwich structure by long time reflow soldering was studied. It was found that the interfacial compound at the Cu substrate was binary Cu-Sn compound in Sn-Ag-Bi solder joint and Cu 5 Zn 8 phase in Sn-Zn-Bi solder joint. The thickness of the Cu-Zn compound layer formed at the Cu substrate was greater than or equal to that of Cu-Sn compound layer, although the reflow soldering temperature of Sn-Zn-Bi (240 o C) was lower than that of Sn-Ag-Bi (250 o C). The stable Cu-Zn compound was the absolute preferential phase in the interfacial layer between Sn-Zn-Bi and the Cu substrate. The ternary (Cu, Ni) 6 Sn 5 compound was formed at the Sn-Ag-Bi/Ni(P)-Cu metallization interface, and a complex alloy Sn-Ni-Cu-Zn was formed at the Sn-Zn-Bi/Ni(P)-Cu metallization interface. It was noted that Cu atoms could diffuse from the Cu substrate through the solder matrix to the Ni(P)-Cu metallization within 1 min reflow soldering time for both solder systems, indicating that just 30 s was long enough for Cu to go through 250 μm diffusion length in the Sn-Ag-Bi solder joint at 250 o C. The coupling effect between Ni(P)/Cu metallization and Cu substrate was confirmed as the type of IMCs at Ni(P) layer had been changed from Ni-Sn system to Cu-Sn system apparently by the diffusion effect of Cu atoms. The (Cu, Ni) 6 Sn 5 layer at the Ni(P)/Cu metallization grew significantly and its thickness was even greater than that of the Cu-Sn compound on the opposite side, however the growth of the complex alloy including Sn, Ni, Cu and Zn on the Ni(P)/Cu metallization was suppressed

The matrix effect study in the spectrographic analysis of rare earth elements. Pt. 1. The influence of Sn, Pb, Sb, Bi, Cu, Ag, Zn and Cd on the spectral lines intensity of Y, La, Ce, Pr, Nd and Sm in the current arc exciting between C-electrodes

International Nuclear Information System (INIS)

Wysocka-Lisek, J.; Paszkowska, B.; Mularczyk, K.

1976-01-01

In the beginning the influence of Sn, Pb, Sb, Bi, Cu, Ag, Zn and Cd on the light rare earth spectral lines using Ni as the internal standard, during the intermittent current arc excitation between C-electrodes was studied. On the basis of the spectral lines intensity measurements, it was stated that one may apply the addition of Ni as the internal standard by the quantitative determination of Sn, Pb, Sb, Bi, Zn and Cd in the light rare earth mixtures with one of the above. Also a great influence of the presence of the individually studied metal was observed on the spectral line intensity of rare earth elements and nickel. The differences of the thermo-chemical reactions nature between excited elements and the carbon of the electrodes may cause that influence. (author)

Mössbauer studies of Sn /Nb substituted Mn–Zn ferrites

Indian Academy of Sciences (India)

Unknown

communications, devices like computers, microprocessor and VCR systems, the use of above said types of power supplies highly increased. Though studies on Mn–Zn ... Hence, the aim of the present paper is to bring out the. Mössbauer studies of Sn/Nb substituted Mn–Zn ferrites. 2. Sample preparation and experimental.

Core-level photoelectron study of Si(1 1 1) sq root 7x sq root 3-(Pb, Sn) surface

CERN Document Server

Soda, K; Takada, T; Yoshimoto, O; Kato, M; Yagi, S; Morita, K; Kamada, M

2003-01-01

The Sn 4d and Pb 5d core-level photoelectron spectra have been studied in order to clarify their bonding properties and atomic arrangement on a Si(1 1 1) sq root 7x sq root 3-(Pb, Sn) surface, which is formed by the coadsorption of 0.4 ML Pb and 0.4 ML Sn and shows two kinds of bright spots in the scanning tunneling microscopic (STM) images: (A) those aligned zigzag on the T sub 1 site and (B) those on the T sub 1 and H sub 3 sites along the [1 1 -2] direction. The Pb 5d spectrum shows a single spin-orbit-split feature with weak tailing towards the high binding energy side, while the Sn 4d spectrum exhibits shoulder structures at the high binding energy side of the main peaks. This definitely indicates at least two different Sn-Si bonds or inequivalent Sn adsorbing sites and single bond or site for Pb. Thus the spots A at the T sub 1 site and those B at the T sub 1 and H sub 3 sites in the STM images are ascribed to Pb and Sn adatoms, respectively. The formation process of this surface will be also discussed ...

Temperature-dependent electrical characteristics and carrier transport mechanism of p-Cu2ZnSnS4/n-GaN heterojunctions

Science.gov (United States)

Niteesh Reddy, Varra; Reddy, M. Siva Pratap; Gunasekhar, K. R.; Lee, Jung-Hee

2018-04-01

This work explores the temperature-dependent electrical characteristics and carrier transport mechanism of Au/p-Cu2ZnSnS4/n-type GaN heterojunction (HJ) diodes with a CZTS interlayer. The electrical characteristics were examined by current-voltage-temperature, turn-on voltage-temperature and series resistance-temperature in the high-temperature range of 300-420 K. It is observed that an exponential decrease in the series resistance ( R S) and increase in the ideality factor ( n) and barrier height ( ϕ b) with increase in temperature. The thermal coefficient ( K j) is determined to be - 1.3 mV K-1 at ≥ 300 K. The effective ϕ b is determined to be 1.21 eV. This obtained barrier height is consistent with the theoretical one. The characteristic temperature ( T 0) resulting from the Cheung's functions [d V/d(ln I) vs. I and H( I) vs. I], is seen that there is good agreement between the T 0 values from both Cheung's functions. The relevant carrier transport mechanisms of Au/p-CZTS/n-type GaN HJ are explained based on the thermally decreased energy band gap of n-type GaN layers, thermally activated deep donors and increased further activated shallow donors.

Effect of annealing temperature on a single step processed Cu{sub 2}ZnSnS{sub 4} thin film via solution method

Energy Technology Data Exchange (ETDEWEB)

Prabeesh, P.; Selvam, I. Packia; Potty, S.N.

2016-05-01

Cu{sub 2}ZnSnS{sub 4} (CZTS) is a promising material for thin film solar cell applications because of its excellent photovoltaic properties, high abundance and non-toxicity. Thin films of CZTS are generally fabricated by vacuum based techniques or by using toxic solvents and these routes reduce its attention as a low cost and environmental friendly material. In this study, we have prepared CZTS through a solution based single step approach using non-toxic chemicals by spin coating and studied the effect of annealing temperature in the range 350–550 °C in nitrogen atmosphere on structural, optical and electrical properties. XRD results revealed the formation of kesterite phase at all annealing temperatures, while the Raman studies indicated Cu{sub 2}SnS{sub 2} impurity phase in the film annealed at 550 °C. Band gap of the films annealed in nitrogen varies from 1.46 eV to 1.56 eV, depending on the annealing temperature. Optimum properties, such as, good crystallinity, dense structure, ideal band gap (1.49 eV) and good absorption coefficient (10{sup 4} cm{sup −1}), were obtained for the film annealed at 500 °C for 30 min in nitrogen. - Highlights: • Prepared CZTS film through one-step liquid based approach using non-toxic chemicals. • Studied the effect of N{sub 2} annealing on structural, optical and electrical properties. • The phase pure CZTS absorber film exhibited excellent photovoltaic properties • The film annealed at 500 °C for 30 min in nitrogen exhibited optimum properties.

High Pressure Properties of a Ba-Cu-Zn-P Clathrate-I

Directory of Open Access Journals (Sweden)

Juli-Anna Dolyniuk

2016-08-01

Full Text Available The high pressure properties of the novel tetrel-free clathrate, Ba8Cu13.1Zn3.3P29.6, were investigated using synchrotron powder X-ray diffraction. The pressure was applied using a diamond anvil cell. No structural transitions or decomposition were detected in the studied pressure range of 0.1–7 GPa. The calculated bulk modulus for Ba8Cu13.1Zn3.3P29.6 using a third-order Birch-Murnaghan equation of state is 65(6 GPa at 300 K. This bulk modulus is comparable to the bulk moduli of Ge- and Sn-based clathrates, like A8Ga16Ge30 (A = Sr, Ba and Sn19.3Cu4.7P22I8, but lower than those for the transition metal-containing silicon-based clathrates, Ba8TxSi46−x, T = Ni, Cu; 3 ≤ x ≤ 5.

K2 ZnSn3 Se8 : A Non-Centrosymmetric Zinc Selenidostannate(IV) Featuring Interesting Covalently Bonded [ZnSn3 Se8 ]2- Layer and Exhibiting Intriguing Second Harmonic Generation Activity.

Science.gov (United States)

Zhou, Molin; Jiang, Xingxing; Yang, Yi; Guo, Yangwu; Lin, Zheshuai; Yao, JJiyong; Wu, Yicheng

2017-06-19

Non-centrosymmetric zinc selenidostannate(IV) K 2 ZnSn 3 Se 8 was synthesized. It features interesting covalently bonded [ZnSn 3 Se 8 ] 2- layers with K + cations filling in the interlayer voids. The phonon spectrum was calculated to clarify its structural stability. Based on the X-ray diffraction data along with the Raman spectrum, the major bonding features of the title compound were identified. According to the UV/vis-NIR spectroscopy, K 2 ZnSn 3 Se 8 possesses a typical direct band gap of 2.10 eV, which is in good agreement with the band structure calculations. Moreover, our experimental measurements and detailed theoretical calculations reveal that K 2 ZnSn 3 Se 8 is a new phase-matchable nonlinear optical material with a powder second harmonic generation (SHG) signal about 0.6 times of that of AgGaS 2 . © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

Energy Technology Data Exchange (ETDEWEB)

Saji, Kachirayil J. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Govt. Victoria College, University of Calicut, Palakkad 678 001 (India); Venkata Subbaiah, Y.P. [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Department of Physics, Yogi Vemana University, Kadapa, Andhra Pradesh 516003 (India); Tian, Kun [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States); Tiwari, Ashutosh, E-mail: tiwari@eng.utah.edu [Nanostructured Materials Research Laboratory, Department of Materials Science & Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

2016-04-30

Tin monoxide (SnO) is considered as one of the most important p-type oxides available to date. Thin films of SnO have been reported to possess both an indirect bandgap (~ 0.7 eV) and a direct bandgap (~ 2.8 eV) with quite high hole mobility (~ 7 cm{sup 2}/Vs) values. Moreover, the hole density in these films can be tuned from 10{sup 15}–10{sup 19} cm{sup −3} just by controlling the thin film deposition parameters. Because of the above attributes, SnO thin films offer great potential for fabricating modern electronic and optoelectronic devices. In this article, we are reviewing the most recent developments in this field and also presenting some of our own results on SnO thin films grown by pulsed laser deposition technique. We have also proposed a p–n heterostructure comprising of p-type SnO and n-type ZnO which can pave way for realizing next-generation, all-oxide transparent electronic devices. - Highlights: • We reviewed recent developments on p-type SnO thin film research. • Discussed the optical and electrical properties of SnO thin films • Bipolar conduction in SnO is discussed. • Optoelectronic properties of SnO–ZnO composite system are discussed. • Proposed SnO–ZnO heterojunction band structure.

Enhanced temperature stability and quality factor with Hf substitution for Sn and MnO2 doping of (Ba0.97Ca0.03(Ti0.96Sn0.04O3 lead-free piezoelectric ceramics with high Curie temperature

Directory of Open Access Journals (Sweden)

Cheng-Che Tsai

2016-12-01

Full Text Available In this work, the process of two-stage modifications for (Ba0.97Ca0.03(Ti0.96Sn0.04-xHfxO3 (BCTS4-100xH100x ceramics was studied. The trade-off composition was obtained by Hf substitution for Sn and MnO2 doping (two-stage modification which improves the temperature stability and piezoelectric properties. The phase structure ratio, microstructure, and dielectric, piezoelectric, ferroelectric, and temperature stability properties were systematically investigated. Results showed that BCTS4-100xH100x piezoelectric ceramics with x=0.035 had a relatively high Curie temperature (TC of about 112 °C, a piezoelectric charge constant (d33 of 313 pC/N, an electromechanical coupling factor (kp of 0.49, a mechanical quality factor (Qm of 122, and a remnant polarization (Pr of 19μC/cm2. In addition, the temperature stability of the resonant frequency (fr, kp, and aging d33 could be tuned via Hf content. Good piezoelectric temperature stability (up to 110 °C was found with x =0.035. BCTS0.5H3.5 + a mol% Mn (BCTSH + a Mn piezoelectric ceramics with a = 2 had a high TC of about 123 °C, kp ∼ 0.39, d33 ∼ 230 pC/N, Qm ∼ 341, and high temperature stability due to the produced oxygen vacancies. This mechanism can be depicted using the complex impedance analysis associated with a valence compensation model on electric properties. Two-stage modification for lead-free (Ba0.97Ca0.03(Ti0.96Sn0.04O3 ceramics suitably adjusts the compositions for applications in piezoelectric motors and actuators.

Magnetic exchange interactions in Mn doped ZnSnAs{sub 2} chalcopyrite

Energy Technology Data Exchange (ETDEWEB)

Bouhani-Benziane, H.; Sahnoun, O. [Laboratoire de Physique Quantique de la Matière et Modélisation Mathématique (LPQ3M), University of Mascara (Algeria); Sahnoun, M., E-mail: sahnoun_cum@yahoo.fr [Laboratoire de Physique Quantique de la Matière et Modélisation Mathématique (LPQ3M), University of Mascara (Algeria); Department of Chemistry, University of Fribourg (Switzerland); Driz, M. [Laboratoire de Sciences des Matériaux (LSM), University of Sidi Bel Abbes (Algeria); Daul, C. [Department of Chemistry, University of Fribourg (Switzerland)

2015-12-15

Accurate ab initio full-potential augmented plane wave (FP-LAPW) electronic calculations within generalized gradient approximation have been performed for Mn doped ZnSnAs{sub 2} chalcopyrites, focusing on their electronic and magnetic properties as a function of the geometry related to low Mn-impurity concentration and the spin magnetic alignment (i.e., ferromagnetic vs antiferromagnetic). As expected, Mn is found to be a source of holes and localized magnetic moments of about 4 µ{sub B} per Mn atom are calculated which are sufficiently large. The defect calculations are firstly performed by replacing a single cation (namely Zn and Sn) with a single Mn atom in the pure chalcopyrite ZnSnAs{sub 2} supercell, and their corresponding formation energies show that the substitution of a Sn atom (rather than Zn) by Mn is strongly favored. Thereafter, a comparison of total energy differences between ferromagnetic (FM) and antiferromagnetic (AFM) are given. Surprisingly, the exchange interaction between a Mn pairs is found to oscillate with the distance between them. Consequently, the AFM alignment is energetically favored in Mn-doped ZnSnAs{sub 2} compounds, except for low impurity concentration associated with lower distances between neighboring Mn impurities, in this case the stabilization of FM increases. Moreover, the ferromagnetic alignment in the Mn-doped ZnSnAs{sub 2} systems behaves half-metallic; the valence band for majority spin orientation is partially filled while there is a gap in the density of states for the minority spin orientation. This semiconducting gap of ~1 eV opened up in the minority channel and is due to the large bonding–antibonding splitting from the p–d hybridization. Our findings suggest that the Mn-doped ZnSnAs{sub 2} chalcopyrites could be a different class of ferromagnetic semiconductors. - Highlights: • ab initio calculations were performed on Mn doped ZnSnAs{sub 2} chalcopyrite. • Substitution of a Sn atom (rather than Zn) by Mn

SnO{sub 2}/ZnO composite structure for the lithium-ion battery electrode

Energy Technology Data Exchange (ETDEWEB)

Ahmad, Mashkoor, E-mail: mashkoorahmad2003@yahoo.com [Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Advanced Material, China Iron and Steel Research Institute Group, Department of Material Science and Engineering, Tsinghua University, Beijing 100084 (China); Nanomaterial Research Group, Physics Division, PINSTECH, P.O. Nilore, Islamabad (Pakistan); Yingying, Shi [Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Sun, Hongyu [Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Advanced Material, China Iron and Steel Research Institute Group, Department of Material Science and Engineering, Tsinghua University, Beijing 100084 (China); Shen, Wanci [Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Zhu, Jing, E-mail: jzhu@mail.tsinghua.edu.cn [Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Advanced Material, China Iron and Steel Research Institute Group, Department of Material Science and Engineering, Tsinghua University, Beijing 100084 (China)

2012-12-15

In this article, SnO{sub 2}/ZnO composite structures have been synthesized by two steps hydrothermal method and investigated their lithium storage capacity as compared with pure ZnO. It has been found that these composite structures combining the large specific surface area, stability and catalytic activity of SnO{sub 2} micro-crystals, demonstrate the higher initial discharge capacity of 1540 mA h g{sup -1} with a Coulombic efficiency of 68% at a rate of 120 mA h g{sup -1} between 0.02 and 2 V and found much better than that of any previously reported ZnO based composite anodes. In addition, a significantly enhanced cycling performance, i.e., a reversible capacity of 497 mA h g{sup -1} is retained after 40 cycles. The improved lithium storage capacity and cycle life is attributed to the addition of SnO{sub 2} structure, which act as good electronic conductors and better accommodation of the large volume change during lithiation/delithiation process. - Graphical abstract: SnO{sub 2}/ZnO composite structures demonstrate the improved lithium storage capacity and cycle life as compared with pure ZnO nanostructure. Highlights: Black-Right-Pointing-Pointer Synthesis of SnO{sub 2}/ZnO composite structures by two steps hydrothermal approach. Black-Right-Pointing-Pointer Investigation of lithium storage capacity. Black-Right-Pointing-Pointer Excellent lithium storage capacity and cycle life of SnO{sub 2}/ZnO composite structures.

A novel fiber-optic temperature sensor based on high temperature-dependent optical properties of ZnO film on sapphire fiber-ending

International Nuclear Information System (INIS)

Cai Pinggen; Zhen Dong; Xu Xiaojun; Liu Yulin; Chen Naibo; Wei Gaorao; Sui Chenghua

2010-01-01

We report the growth of high-quality thin films of ZnO via an electron-beam evaporation technique. Studies of the transmittance spectra have revealed a sharp optical absorption edge and a significant redshift. After annealing at 673 K, the ZnO films again demonstrated a sharp absorption edge in a manner similar to the as-deposited samples. This illustrates the excellent thermal stability of the thin films and, as such, demonstrates their potential as fiber-optic temperature sensors. Utilizing the influence of optical absorption spectra at different temperatures, a novel fiber-optic temperature sensor based on this material has been designed and tested. This technique could offer a simple, robust and cost-effective method to be used in high temperature sensing applications.

Bioleaching mechanism of Zn, Pb, In, Ag, Cd and As from Pb/Zn smelting slag by autotrophic bacteria.

Science.gov (United States)

Wang, Jia; Huang, Qifei; Li, Ting; Xin, Baoping; Chen, Shi; Guo, Xingming; Liu, Changhao; Li, Yuping

2015-08-15

A few studies have focused on release of valuable/toxic metals from Pb/Zn smelting slag by heterotrophic bioleaching using expensive yeast extract as an energy source. The high leaching cost greatly limits the practical potential of the method. In this work, autotrophic bioleaching using cheap sulfur or/and pyrite as energy matter was firstly applied to tackle the smelting slag and the bioleaching mechanisms were explained. The results indicated autotrophic bioleaching can solubilize valuable/toxic metals from slag, yielding maximum extraction efficiencies of 90% for Zn, 86% for Cd and 71% for In, although the extraction efficiencies of Pb, As and Ag were poor. The bioleaching performance of Zn, Cd and Pb was independent of leaching system, and leaching mechanism was acid dissolution. A maximum efficiency of 25% for As was achieved by acid dissolution in sulfursulfur oxidizing bacteria (S-SOB), but the formation of FeAsO4 reduced extraction efficiency in mixed energy source - mixed culture (MS-MC). Combined works of acid dissolution and Fe(3+) oxidation in MS-MC was responsible for the highest extraction efficiency of 71% for In. Ag was present in the slag as refractory AgPb4(AsO4)3 and AgFe2S3, so extraction did not occur. Copyright © 2015 Elsevier Ltd. All rights reserved.

The giant Upper Yangtze Pb-Zn province in SW China: Reviews, new advances and a new genetic model

Science.gov (United States)

Zhou, Jia-Xi; Xiang, Zhen-Zhong; Zhou, Mei-Fu; Feng, Yue-Xing; Luo, Kai; Huang, Zhi-Long; Wu, Tao

2018-04-01

western Yangtze Block. The change of tectonic regimes from extension to compression after eruption of basalts of the ELIP, and then to extension during Early Mesozoic, facilitated extraction, migration, and excretion of ore-forming metals and associated fluids. Mixing of fluids and reduction geochemical barrier activated TSR, causing cyclical carbonate dissolution, CO2 degassing and recrystallization (namely carbonate buffer). All these processes triggered continuous precipitation of huge amounts of hydrothermal minerals. Underplating and eruption of ELIP basalts provided heat flow, fluids and volatiles, whereas the basalts acted as an impermeable and protective layer, and even as ore-hosting rocks. These Pb-Zn deposits have spatial and genetic association with igneous activities of the ELIP, and are characterized by high ore grades (>10 wt% Pb + Zn), high concentrations of associated metals (e.g. Cu, Ag, Ge, and Cd), and medium-low temperatures (usually Yangtze metallogenic province representing to a new type of Pb-Zn deposits that are hosted in platform carbonate sequences and formed within compressional zones of passive margin tectonic settings.

High Bismuth Alloys as Lead-Free Alternatives for Interconnects in High-Temperature Electronics

Science.gov (United States)

Mallampati, Sandeep

Predominant high melting point solders for high-temperature electronics (operating temperatures from 200 to 250°C) are Pb-based which are being banned from usage due to their toxic nature. In this study, high bismuth alloy compositions (Bi-14Cu-8Sn, Bi-20Sb-10Cu, Bi-15Sb-10Cu and Bi-10Sb-10Cu) were designed, cast, and characterized to understand their potential as replacements. The desirable aspect of Bi is its high melting temperature, which is 271°C. Alloying elements Sn, Sb and Cu were added to improve some of its properties such as thermal conductivity, plasticity, and reactivity with Cu and Ni surface. Metallographic sectioning and microstructure analysis were performed on the bulk alloys to compare the evolution of phases predicted from equilibrium phase diagrams. Reflow processes were developed to make die-attach samples out of the proposed alloys and die-shear testing was carried out to characterize mechanical integrity of the joint. Thermal shock between -55°C to 200°C and high temperature storage at 200°C were performed on the assembled die-attach samples to study microstructure evolution and mechanical behavior of the reflowed alloys under accelerated testing conditions. In addition, heat dissipation capabilities, using flash diffusivity, were measured on the bulk alloys and also on the die-attach assembly. Finally, tensile testing was performed on the dogbone specimens to identify the potential for plastic deformation and electron backscatter diffraction (EBSD) analysis was used to study the grain orientations on the fracture surfaces and their influence on the crack propagation. Bi-14Cu-8Sn has formed BiNi by on the die backside metallization and the reaction with Cu was poor. This has resulted in weaker substrate side interface. It was observed that Bi-Sb alloys have strong reactivity with Ni (forming Bi3Ni, BiNi and NiSb intermetallic phases), and with Cu (forming Cu2Sb, Cu4Sb). Spallation was observed in NiSb interfacial intermetallic layer and

In-situ study of electromigration-induced grain rotation in Pb-free solder joint by synchrotron microdiffraction

Energy Technology Data Exchange (ETDEWEB)

Chen, Kai; Tamura, Nobumichi; Tu, King-Ning

2008-10-31

The rotation of Sn grains in Pb-free flip chip solder joints hasn't been reported in literature so far although it has been observed in Sn strips. In this letter, we report the detailed study of the grain orientation evolution induced by electromigration by synchrotron based white beam X-ray microdiffraction. It is found that the grains in solder joint rotate more slowly than in Sn strip even under higher current density. On the other hand, based on our estimation, the reorientation of the grains in solder joints also results in the reduction of electric resistivity, similar to the case of Sn strip. We will also discuss the reason why the electric resistance decreases much more in strips than in the Sn-based solders, and the different driving force for the grain growth in solder joint and in thin film interconnect lines.

Electromechanical properties of amorphous In-Zn-Sn-O transparent conducting film deposited at various substrate temperatures on polyimide substrate

Science.gov (United States)

Kim, Young Sung; Lee, Eun Kyung; Eun, Kyoungtae; Choa, Sung-Hoon

2015-09-01

The electromechanical properties of the amorphous In-Zn-Sn-O (IZTO) film deposited at various substrate temperatures were investigated by bending, stretching, twisting, and cyclic bending fatigue tests. Amorphous IZTO films were grown on a transparent polyimide substrate using a pulsed DC magnetron sputtering system at different substrate temperatures ranging from room temperature to 200 °C. A single oxide alloyed ceramic target (In2O3: 80 wt %, ZnO: 10 wt %, SnO2: 10 wt % composition) was used. The amorphous IZTO film deposited at 150 °C exhibited an optimized electrical resistivity of 5.8 × 10-4 Ω cm, optical transmittance of 87%, and figure of merit of 8.3 × 10-3 Ω-1. The outer bending tests showed that the critical bending radius decreased as substrate temperature increased. On the other hand, in the inner bending tests, the critical bending radius increased with an increase in substrate temperature. The differences in the bendability of IZTO films for the outer and inner bending tests could be attributed to the internal residual stress of the films. The uniaxial stretching tests also showed the effects of the internal stress on the mechanical flexibility of the film. The bending and stretching test results demonstrated that the IZTO film had higher bendability and stretchability than the conventional ITO film. The IZTO film could withstand 10,000 bending cycles at a bending radius of 10 mm. The effect of the surface roughness on the mechanical durability of all IZTO films was very small due to their very smooth surfaces.

Template-free hydrothermal synthesis and high photocatalytic activity of ZnWO4 nanorods

International Nuclear Information System (INIS)

Gao, Bin; Fan, Huiqing; Zhang, Xiaojun; Song, Lixun

2012-01-01

Highlights: ► ZnWO 4 nanorods with uniform diameter are successfully prepared through a template-free hydrothermal method. ► The crystallinity of the products is influenced by the pH value of initial precursor suspension. ► Photocatalytic activity of the ZnWO 4 nanorods for degradation of methylene blue is evaluated. ► The ZnWO 4 nanorods exhibit good stability of photocatalytic activity. - Abstract: ZnWO 4 nanorods are successfully synthesized by a template-free hydrothermal method, and are characterized in detail by X-ray diffractometer (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED). The results show that the ZnWO 4 nanorods with wolframite structure are well-crystallized single crystallites. The crystallinity of the products is influenced by the pH value of initial precursor suspension. The width and length of the synthesized samples increase with hydrothermal reaction temperature. The photocatalytic efficiency of the ZnWO 4 nanorods for degradation of methylene blue (MB) in aqueous solution under UV light irradiation declines greatly with increasing crystallinity. The ZnWO 4 nanorods prepared at pH of 4 have the best activity in photo-degradation of MB. After six recycles, photocatalytic activity loss of the catalyst is not obvious.

Nanoscale semiconductor Pb{sub 1-x}Sn{sub x}Se (x = 0.2) thin films synthesized by electrochemical atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Lin Shaoxiong; Zhang Xin; Shi Xuezhao; Wei Jinping; Lu Daban; Zhang Yuzhen; Kou Huanhuan [Department of Chemistry, Lanzhou University, Lanzhou 730000 (China); Wang Chunming, E-mail: wangcm@lzu.edu.cn [Department of Chemistry, Lanzhou University, Lanzhou 730000 (China)

2011-04-15

In this paper the fabrication and characterization of IV-VI semiconductor Pb{sub 1-x}Sn{sub x}Se (x = 0.2) thin films on gold substrate by electrochemical atomic layer deposition (EC-ALD) method at room temperature are reported. Cyclic voltammetry (CV) is used to determine approximate deposition potentials for each element. The amperometric I-t technique is used to fabricate the semiconductor alloy. The elements are deposited in the following sequence: (Se/Pb/Se/Pb/Se/Pb/Se/Pb/Se/Sn ...), each period is formed using four ALD cycles of PbSe followed by one cycle of SnSe. Then the deposition manner above is cyclic repeated till a satisfactory film with expected thickness of Pb{sub 1-x}Sn{sub x}Se is obtained. The morphology of the deposit is observed by field emission scanning electron microscopy (FE-SEM). X-ray diffraction (XRD) pattern is used to study its crystalline structure; X-ray photoelectron spectroscopy (XPS) of the deposit indicates an approximate ratio 1.0:0.8:0.2 of Se, Pb and Sn, as the expected stoichiometry for the deposit. Open-circuit potential (OCP) studies indicate a good p-type property, and the good optical activity makes it suitable for fabricating a photoelectric switch.

Influence of high-energy ion implantation on the microstructure of Sn - 9,8 wt. % Zn alloy

International Nuclear Information System (INIS)

Gusakova, O.V.

2016-01-01

The results of investigation of influence of Xe ion implantation on the microstructure of Sn - 9,8 wt. % Zn alloy are represented/ Analysis of the experimental results shows that the high-energy ion implantation of Xe causes a change in the particle size of zinc. (authors)

MODEL ADSORPSI TIMBAL (PB DAN SENG (ZN DALAM SISTEM AIR-SEDIMEN DI WADUK RIAM KANAN KALIMANTAN SELATAN

Directory of Open Access Journals (Sweden)

Chatimatun Nisa

2013-04-01

Full Text Available Heavy metals are often considered as main contaminant in water pollution and its highly dangerous for living organisms in the contaminated area. The aim of this research is to predict the movement pattern of Pb and Zn metal ions from water onto sediment in the Riam Kanan Reservoir, Aranio Sub-district, Banjar District. In addition, this study is expected to give information on the initial condition of Riam Kanan reservoir; dynamics; and the fate of Pb and Zn ions from upstream to downstream. The samples were analysed using AAS (Atomic Absorption Spectrophotometer based on the Indonesian National Standard (SNI. Result of laboratory analysis showed that in the water, contents of metal Pb were 0.0494 ppm – 0.2582 ppm, Zn 0.0002 ppm – 0.0370 ppm. In the sediment, contents of Pb were 0.8311 mg/kg – 21.1756 mg/kg and Zn 3.3778 mg/kg – 28.3522 mg/kg. Based on the experimental data, it was found that the displacement of Pb and Zn onto sediment complies with Langmuir adsorption model where the determination coefficient (R2 were 0.8167 and 0.8801 respectively.

Incorporation of trace elements in Portland cement clinker: Thresholds limits for Cu, Ni, Sn or Zn

International Nuclear Information System (INIS)

Gineys, N.; Aouad, G.; Sorrentino, F.; Damidot, D.

2011-01-01

This paper aims at defining precisely, the threshold limits for several trace elements (Cu, Ni, Sn or Zn) which correspond to the maximum amount that could be incorporated into a standard clinker whilst reaching the limit of solid solution of its four major phases (C 3 S, C 2 S, C 3 A and C 4 AF). These threshold limits were investigated through laboratory synthesised clinkers that were mainly studied by X-ray Diffraction and Scanning Electron Microscopy. The reference clinker was close to a typical Portland clinker (65% C 3 S, 18% C 2 S, 8% C 3 A and 8% C 4 AF). The threshold limits for Cu, Ni, Zn and Sn are quite high with respect to the current contents in clinker and were respectively equal to 0.35, 0.5, 0.7 and 1 wt.%. It appeared that beyond the defined threshold limits, trace elements had different behaviours. Ni was associated with Mg as a magnesium nickel oxide (MgNiO 2 ) and Sn reacted with lime to form a calcium stannate (Ca 2 SnO 4 ). Cu changed the crystallisation process and affected therefore the formation of C 3 S. Indeed a high content of Cu in clinker led to the decomposition of C 3 S into C 2 S and of free lime. Zn, in turn, affected the formation of C 3 A. Ca 6 Zn 3 Al 4 O 15 was formed whilst a tremendous reduction of C 3 A content was identified. The reactivity of cements made with the clinkers at the threshold limits was followed by calorimetry and compressive strength measurements on cement paste. The results revealed that the doped cements were at least as reactive as the reference cement.

Self-assembled 3D ZnSnO3 hollow cubes@reduced graphene oxide aerogels as high capacity anode materials for lithium-ion batteries

International Nuclear Information System (INIS)

Wang, Yankun; Li, Dan; Liu, Yushan; Zhang, Jianmin

2016-01-01

Highlights: • 3D ZnSnO 3 hollow cubes@reducedgrapheneoxideaerogels(ZGAs) were fabricated. • The electrochemical properties of ZGAs were investigated for LIBs. • ZGAs demonstrated superior lithium storage performance. - Abstract: 3D ZnSnO 3 hollow cubes@reduced graphene oxide aerogels (ZGAs) were fabricated via a colloid electrostatic self-assembly method between the graphene oxide (GO) nanosheets and poly(diallyldimethylammonium chloride) (PDDA) modified ZnSnO 3 hollow cubes colloid, followed by hydrothermal and freeze-drying treatments. The unique porous architecture of ZnSnO 3 hollow cubes encapsulated by flexible reduced graphene oxide (rGO) sheets not only effectively retarded the huge volume expansion during repeated charge-discharge cycles, but also facilitated fast lithium ion and electron transport through 3D networks. The ZGAs exhibited significantly enhanced cycling stability (745.4 mAh g −1 after 100 cycles at a current of 100 mA g −1 ) and superior rate capability (as high as 552.6 mAh g −1 at 1200 mA g −1 ). The results indicate that the ZGAs are promising anode materials for high-performance lithium-ion batteries.

Ligand-Free Nanocrystals of Highly Emissive Cs4PbBr6 Perovskite

KAUST Repository

Zhang, Yuhai

2018-02-23

Although ligands of long carbon chains are very crucial to form stable colloidal perovskite nanocrystals (NCs), they create a severe barrier for efficient charge injection or extraction in quantum-dot-based optoelectronics, such as light emitting diode or solar cell. Here, we report a new approach to preparing ligand-free perovskite NCs of CsPbBr, which retained high photoluminescence quantum yield (44%). Such an approach involves a polar solvent (acetonitrile) and two small molecules (ammonium acetate and cesium chloride), which replace the organic ligand and still protect the nanocrystals from dissolution. The successful removal of hydrophobic long ligands was evidenced by Fourier transform infrared spectroscopy, ζ potential analysis, and thermogravimetric analysis. Unlike conventional perovskite NCs that are extremely susceptible to polar solvents, the ligand-free CsPbBr NCs show robust resistance to polar solvents. Our ligand-free procedure opens many possibilities not only from a material hybridization perspective but also in optimizing charge injection and extraction in semiconductor quantum-dot-based optoelectronics applications.

Dosimetric sensing and optical properties of ZnO–SnO2 nanocomposites synthesized by co-precipitation method

International Nuclear Information System (INIS)

Baitha, Pankaj Kr.; Pal, Partha P.; Manam, J.

2014-01-01

In this study an effort has been made to investigate the dosimetric sensing and optical properties of ZnO–SnO 2 nanocomposites at different pH values. The nanocomposites samples are irradiated by X-ray and then thermoluminescence (TL) analysis is carried out to investigate the response. The structural details of nanocomposites are characterized by Scanning Electron microscope, X-Ray Powder Diffraction and Fourier Transform Infrared Spectroscopy. Similarly, optical properties were characterized by UV–vis spectroscopy and Photoluminescence spectroscopy. The XRD studies revealed good crystallnity of samples with presence of both phases, ZnO as well as SnO 2 simultaneously. The SEM image revealed nanoflakes and nanoflower shape of ZnO–SnO 2 nanocomposite for sample synthesized at pH 7. Also, nanocube and nanosphere can be seen at higher pH value of 9. The room temperature photoluminescence spectra of ZnO–SnO 2 nanocomposite contain multi peaks at 398 nm, 410 nm, 451 nm, 469 nm, 484 nm, 493 nm and 545 nm at an excitation wavelength of 225 nm, which arises mainly due to oxygen and zinc related defects. The TL glow curve shows intense glow peaks at 346°, 261°, 209° and 153° for the samples synthesized at pH 3, pH 5, pH 7 and pH 9 respectively. The peaks are found to be increased with higher pH values. The peaks are found to be shifted towards lower temperature with higher pH values. The study shows that the ZnO–SnO 2 nano-composite is more developed material than singly ZnO compound or SnO 2 with enhanced opto-electronic and thermal properties and great applications in thermal dosimetry. - Highlights: • ZnO–CNT nanocomposites prepared by coprecipitation method at different pH values. • Sample at different pH show different nanostructures as revealed by SEM. • PL spectra indicate intense peaks related to O 2 and Zn defects for all samples. • TL spectra show peak shift with increasing pH values of samples. • ZnO–CNTs are very effective for both

Superconducting properties, chemical compositions, and lattice parameters of Pb-, Sn- and (Pb1-xSnx)Mo6S8

International Nuclear Information System (INIS)

Sadakata, N.; Corderman, R.; Asano, T.; Cox, D.; Suenaga, M.; Foner, S.; McNiff, E.J. Jr.

1991-01-01

The values of critical temperatures for alloys of Pb- and SnMo 6 S 8 were shown to be lower than those of the respective pure Chevrel phases. Chemical compositional analysis of the compounds revealed that the decreased T c in the alloys are due to the off-stoichiometric compositions in the alloys. Although alloying slightly increased the values of the upper critical field H c2 over that for PbMo 6 S 8 , the H c2 values for these specimens were substantially lower than those which have been reported for PbMo 6 S 8 . Possible causes for these depressed values of H c2 are discussed

Enhancement of Thermoelectric Performances in a Topological Crystal Insulator Pb0.7Sn0.3Se via Weak Perturbation of the Topological State and Chemical Potential Tuning by Chlorine Doping.

Science.gov (United States)

Lin, Chan-Chieh; Kim, Gareoung; Ginting, Dianta; Ahn, Kyunghan; Rhyee, Jong-Soo

2018-04-04

Topological insulators generally share commonalities with good thermoelectric (TE) materials because of their narrow band gaps and heavy constituent elements. Here, we propose that a topological crystalline insulator (TCI) could exhibit a high TE performance by breaking its crystalline symmetry and tuning the chemical potential by elemental doping. As a candidate material, we investigate the TE properties of the Cl-doped TCI Pb 0.7 Sn 0.3 Se. The infrared absorption spectra reveal that the band gap is increased from 0.055 eV for Pb 0.7 Sn 0.3 Se to 0.075 eV for Pb 0.7 Sn 0.3 Se 0.99 Cl 0.01 , confirming that the Cl doping can break the crystalline mirror symmetry of a TCI Pb 0.7 Sn 0.3 Se and thereby enlarge its bulk electronic band gap. The topological band inversion is confirmed by the extended X-ray absorption fine structure spectroscopy, which shows that the TCI state is weakened in a chlorine x = 0.05-doped compound. The small gap opening and partial linear band dispersion with massless and massive bands may have a high power factor (PF) for high electrical conductivity with an enhancement of the Seebeck coefficient. As a result, Pb 0.7 Sn 0.3 Se 0.99 Cl 0.01 shows a considerably enhanced ZT of 0.64 at 823 K, which is about 1200% enhancement in ZT compared with that of the undoped Pb 0.7 Sn 0.3 Se. This work demonstrates that the optimal n-type Cl doping tunes the chemical potential together with breaking the state of the TCI, suppresses the bipolar conduction at high temperatures, and thereby enables the Seebeck coefficient to increase up to 823 K, resulting in a significantly enhanced PF at high temperatures. In addition, the bipolar contribution to thermal conductivity is effectively suppressed for the Cl-doped samples of Pb 0.7 Sn 0.3 Se 1- x Cl x ( x ≥ 0.01). We propose that breaking the crystalline mirror symmetry in TCIs could be a new research direction for exploring high-performance TE materials.

Ferroelectric switching in epitaxial PbZr0.2Ti0.8O3/ZnO/GaN heterostructures

Science.gov (United States)

Wang, Juan; Salev, Pavel; Grigoriev, Alexei

As a wide-bandgap semiconductor, ZnO has gained substantial interest due to its favorable properties including high electron mobility, strong room-temperature luminescence, etc. The main obstacle of its application is the lack of reproducible and low-resistivity p-type ZnO. P-type doping of ZnO through the interface charge injection, which can be achieved by the polarization switching of ferroelectric films, is a tempting solution. We explored ferroelectric switching behavior of PbZr0.2Ti0.8O3/ZnO/GaN heterostructures epitaxially grown on Sapphire substrates by RF sputtering. The electrical measurements of Pt/PbZr0.2Ti0.8O3/ZnO/GaN ferroelectric-semiconductor capacitors revealed unusual behavior that is a combination of polarization switching and a diode I-V characteristics.

Energy band alignment of antiferroelectric (Pb,La)(Zr,Sn,Ti)O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Technische Universität Darmstadt, Institute of Materials Science, Surface Science Division, Jovanka-Bontschits-Straße 2, 64287 Darmstadt (Germany); Lohaus, Christian [Technische Universität Darmstadt, Institute of Materials Science, Surface Science Division, Jovanka-Bontschits-Straße 2, 64287 Darmstadt (Germany); Reiser, Patrick [Technische Universität Darmstadt, Institute of Materials Science, Surface Science Division, Jovanka-Bontschits-Straße 2, 64287 Darmstadt (Germany); InnovationLab GmbH, Speyerer Straße 4, 69115 Heidelberg (Germany); Dimesso, Lucangelo [Technische Universität Darmstadt, Institute of Materials Science, Surface Science Division, Jovanka-Bontschits-Straße 2, 64287 Darmstadt (Germany); Wang, Xiucai; Yang, Tongqing [Tongji University, Key Laboratory of Advanced Civil Engineering Materials (Ministry of Education), Functional Materials Research Laboratory, College of Materials Science and Engineering, Cao’an Road 4800, Shanghai 201804 (China)

2017-06-15

Highlights: • Energy band alignment of antiferroelectric PLZST studied by XPS. • A deconvolution procedure is applied to study band alignment of insulating materials. • Contribution of Pb 6s orbitals leads to higher valence band maximum. • Ferroelectric polarization does not contribute to valence band maximum energy. • The variation of Schottky barrier heights indicates no Fermi level pinning in PLZST. - Abstract: The energy band alignment of antiferroelectric (Pb,La)(Zr,Sn,Ti)O{sub 3} is studied with photoelectron spectroscopy using interfaces with high work function RuO{sub 2} and low work function Sn-doped In{sub 2}O{sub 3} (ITO). It is demonstrated how spectral deconvolution can be used to determine absolute Schottky barrier heights for insulating materials with a high accuracy. Using this approach it is found that the valence band maximum energy of (Pb,La)(Zr,Sn,Ti)O{sub 3} is found to be comparable to that of Pb- and Bi-containing ferroelectric materials, which is ∼1 eV higher than that of BaTiO{sub 3}. The results provide additional evidence for the occupation of the 6s orbitals as origin of the higher valence band maximum, which is directly related to the electrical properties of such compounds. The results also verify that the energy band alignment determined by photoelectron spectroscopy of as-deposited electrodes is not influenced by polarisation. The electronic structure of (Pb,La)(Zr,Sn,Ti)O{sub 3} should enable doping of the material without strongly modifying its insulating properties, which is crucial for high energy density capacitors. Moreover, the position of the energy bands should result in a great freedom of selecting electrode materials in terms of avoiding charge injection.

Determination of fundamental optical constants of Zn2SnO4 films

Directory of Open Access Journals (Sweden)

A.O. Salohub

2017-04-01

Full Text Available Examined in this paper have been optical properties of polycrystalline films Zn2SnO4 deposited using the spray pyrolysis method within the range of substrate temperatures 250 °C to 450 °C in increments of 50 °C. The spectral dependences have been found for the following physical quantities: k(, n(, ε1(, ε2( and defined as they change under the influence of substrate temperature Тs. Moreover, using the model by Wemple–DiDomenico it was calculated the dispersion energy Ео and Ed for this oxide. Two independent methods defined band gaps Zn2SnO4, which decreases from 4.21…4.22 eV down to 4.04…4.05 eV with increasing Тs from 250 °C up to 450 °C.

Liquid phase assisted grain growth in Cu2ZnSnS4 nanoparticle thin films by alkali element incorporation

DEFF Research Database (Denmark)

Engberg, Sara Lena Josefin; Canulescu, Stela; Schou, Jørgen

2018-01-01

The effect of adding LiCl, NaCl, and KCl to Cu2ZnSnS4 (CZTS) nanoparticle thin-film samples annealed in a nitrogen and sulfur atmosphere is reported. We demonstrate that the organic ligand-free nanoparticles previously developed can be used to produce an absorber layer of high quality. The films...

Diffusion barrier characteristics and shear fracture behaviors of eutectic PbSn solder/electroless Co(W,P) samples

International Nuclear Information System (INIS)

Pan, Hung-Chun; Hsieh, Tsung-Eong

2012-01-01

Highlights: ► Diffusion barrier features, activation energies of IMC growth and mechanical behaviors of electroless Co(W,P)/PbSn joints. ► Amorphous Co(W,P) is a sacrificial- plus stuffed-type barrier while polycrystalline Co(W,P) is a sacrificial-type barrier. ► Ductile mode dominates the failure of Co(W,P)/PbSn joints. ► Phosphorus content of Co(W,P) is crucial to the barrier capability and microstructure evolution at Co(W,P)/PbSn interface. ► Diffusion barrier capability is governed by the nature of chemical bonds, rather than the crystallinity of materials. - Abstract: Diffusion barrier characteristics, activation energy (E a ) of IMC growth and bonding properties of amorphous and polycrystalline electroless Co(W,P) (termed as α-Co(W,P) and poly-Co(W,P)) to eutectic PbSn solder are presented. Intermetallic compound (IMC) spallation and an nano-crystalline P-rich layer were observed in PbSn/α-Co(W,P) samples subjected to liquid-state aging at 250 °C. In contrast, IMCs resided on the P-rich layer in PbSn/α-Co(W,P) samples subjected to solid-state aging at 150 °C. Thick IMCs neighboring to an amorphous W-rich layer was seen in PbSn/poly-Co(W,P) samples regardless of the aging type. α-Co(W,P) was found to be a sacrificial- plus stuffed-type barrier while poly-Co(W,P) is mainly a sacrificial-type barrier. The values of E a 's for PbSn/α-Co(W,P) and PbSn/poly-Co(W,P) systems were 338.6 and 167.5 kJ/mol, respectively. Shear test revealed the ductile mode dominates the failure in both α- and poly-Co(W,P) samples. Analytical results indicated the high P content in electroless layer might enhance the barrier capability but degrade the bonding strength.

Characteristic of total suspended particulate (TSP) containing Pb and Zn at solid waste landfill

Science.gov (United States)

Budihardjo, M. A.; Noveandra, K.; Samadikun, B. P.

2018-05-01

Activities conducted at municipal solid waste landfills (MSWLs) potentially cause air pollution. Heavy vehicles in MSWLs release various pollutants that can have negative impacts for humans. One noticeable pollutant at MSWLs is airborne total suspended particulate (TSP) which may contain heavy metals such as Pb and Zn and can cause disease when inhaled by humans. In this study, TSP from a landfill in Semarang, Indonesia was collected and characterized to quantify the concentration of Pb and Zn. Meteorological factors (i.e. temperature, humidity and wind velocity) and landfill activities were considered as factors affecting pollutant concentrations. TSP was sampled using dust samplers while the concentrations of heavy metals in TSP were analyzed using an Atomic Absorption Spectrophotometer (AAS). Pb concentration ranged from 0.84 to 1.78 µg/m3 while Zn concentration was from 7.87 to 8.76 µg/m3. The levels of Pb were below the threshold specified by the Indonesian Government. Meanwhile, the threshold for Zn has not yet been determined.

Adsorpsi Pb2+ dan Zn2+ pada Biomassa Imperata cylindrica

Directory of Open Access Journals (Sweden)

Noer Komari

2017-03-01

Full Text Available Metode alternatif untuk mengatasi pencemaran logam berat adalah biosorpsi menggunakan biomassa sebagai adsorben. Telah dilakukan penelitian kajian adsorpsi campuran Pb2+ dan Zn2+ pada biomassa Imperata cylindrica sebagai adsorben. Tujuan penelitian adalah mengetahui kemampuan biomassa mengadsorpsi Pb2+ dan Zn2+. Preparasi biomassa dilakukan dengan aktivasi menggunakan asam nitrat dan amonium hidroksida. Adsorpsi dilakukan dengan sistem batch. Parameter yang diukur adalah pH optimum, waktu kontak optimum, kapasitas adsorpsi dan recovery ion logam. Analisis kadar logam dilakukan dengan menggunakan Spektrofotometer Serapan Atom (AAS. Hasil penelitian menunjukkan pH optimum adsorpsi Pb2+ dan Zn2+ masing-masing pada pH 5 dan pH 6. Waktu kontak optimum adsorpsi Pb2+ dan Zn2+ masing masing pada 40 menit dan 30 pertama. Kapasitas adsorpsi Pb2+ dan Zn2+ pada konsentrasi awal 10 ppm masing-masing adalah 90,95% dan 43,60%. Recovery Pb2+ dan Zn2+ masing-masing 84,45% dan 57,13%.

Facial development of high performance room temperature NO2 gas sensors based on ZnO nanowalls decorated rGO nanosheets

Science.gov (United States)

Liu, Zongyuan; Yu, Lingmin; Guo, Fen; Liu, Sheng; Qi, Lijun; Shan, Minyu; Fan, Xinhui

2017-11-01

A highly sensitive NO2 gas sensor based on ZnO nanowalls decorated rGO nanosheets was fabricated using a thermal reduction and soft solution process. The highly developed interconnected microporous networks of ZnO nanowalls were anchored homogeneously on the surface of reduced graphene oxide (rGO). Sensors fabricated with heterojunction structures achieved a higher response (S = 9.61) and shorter response-recovery (25 s, 15 s) behavior at room temperature to 50 ppm level NO2 effectively in contrast to those sensors based on net ZnO nanowalls or rGO layers. The stability and selectivity of ZnO/rGO heterojunction were carried out. Meanwhile, the effects of humidity on ZnO/rGO heterojunction gas sensor were investigated. The more preferable sensing performance of ZnO/rGO heterojunction to NO2 was discussed. It can be surmised that this NO2 gas sensor has potential for use as a portable room temperature gas sensor.

Contribuição à Gênese do Depósito Primário Polimetálico (Sn, W±, Zn, Cu, Pb) Correas, Ribeirão Branco (SP)

OpenAIRE

Cláudio Luiz Goraieb

2001-01-01

O depósito primário polimetálico (Sn, W, Zn, Cu, Pb) Correas, situa-se em terrenos pré-cambrianos da Faixa Ribeira, na porção sul do Estado de São Paulo. Dados geológicos obtidos em etapas de mapeamento e sondagem, juntamente com estudos petrográficos, geoquímicos, isotópicos e de inclusões fluidas, apontam para a relação espacial e genética de mineralização com rochas graníticas muito fracionadas (topázio-muscovita-albita granitos) do Maciço Correas. Essas rochas, ligeiramente peraluminossas...

Temperature-dependent dielectric and energy-storage properties of Pb(Zr,Sn,Ti)O{sub 3} antiferroelectric bulk ceramics

Energy Technology Data Exchange (ETDEWEB)

Chen, Xuefeng; Liu, Zhen; Xu, Chenhong; Cao, Fei; Wang, Genshui; Dong, Xianlin, E-mail: xldong@mail.sic.ac.cn [Key laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai (China)

2016-05-15

The dielectric and energy-storage properties of Pb{sub 0.99}Nb{sub 0.02}[(Zr{sub 0.60}Sn{sub 0.40}){sub 0.95}Ti{sub 0.05}]{sub 0.98}O{sub 3} (PNZST) bulk ceramics near the antiferroelectric (AFE)-ferroelectric (FE) phase boundary are investigated as a function of temperature. Three characteristic temperatures T{sub 0}, T{sub C}, T{sub 2} are obtained from the dielectric temperature spectrum. At different temperature regions (below T{sub 0}, between T{sub 0} and T{sub C}, and above T{sub C}), three types of hysteresis loops are observed as square double loop, slim loop and linear loop, respectively. The switching fields and recoverable energy density all first increase and then decrease with increasing temperature, and reach their peak values at ∼T{sub 0}. These results provide a convenient method to optimize the working temperature of antiferroelectric electronic devices through testing the temperature dependent dielectric properties of antiferroelectric ceramics.

Highly selective room temperature NO2 gas sensor based on rGO-ZnO composite

Science.gov (United States)

Jyoti, Kanaujiya, Neha; Varma, G. D.

2018-05-01

Blending metal oxide nanoparticles with graphene or its derivatives can greatly enhance gas sensing characteristics. In the present work, ZnO nanoparticles have been synthesized via reflux method. Thin films of reduced graphene oxide (rGO) and composite of rGO-ZnO have been fabricated by drop casting method for gas sensing application. The samples have been characterized by X-ray diffraction (XRD) and Field-emission scanning electron microscope (FESEM) for the structural and morphological studies respectively. Sensing measurements have been carried out for the composite film of rGO-ZnO for different concentrations of NO2 ranging from 4 to 100 ppm. Effect of increasing temperature on the sensing performance has also been studied and the rGO-ZnO composite sensor shows maximum percentage response at room temperature. The limit of detection (LOD) for rGO-ZnO composite sensor is 4ppm and it exhibits a high response of 48.4% for 40 ppm NO2 at room temperature. To check the selectivity of the composite sensor, sensor film has been exposed to 40 ppm different gases like CO, NH3, H2S and Cl2 at room temperature and the sensor respond negligibly to these gases. The present work suggests that rGO-ZnO composite material can be a better candidate for fabrication of highly selective room temperature NO2 gas sensor.

Thermochemical and phase diagram studies of the Sn-Zn-Ni system

International Nuclear Information System (INIS)

Gandova, V.D.; Broz, P.; Bursik, J.; Vassilev, G.P.

2011-01-01

Highlights: → Sn-Zn-Ni phase diagram in the vicinity of the Sn-Zn system. → Unidentified compositions (UX1-UX4) are repeatedly observed. → This indicates up to 6 ternary compounds in the system. → A ternary eutectic reaction at around 190 o C is found. - Abstract: The phase diagram Sn-Zn-Ni was studied by means of DSC and electron microprobe analysis. The samples were positioned in three isopleth sections with nickel contents of 0.04 (section 1), 0.08 (section 2) and 0.12 (section 3) mole fractions. The mole fractions of Sn corresponding to the particular sections were as follows: from 0.230 to 0.768 (section 1), from 0.230 to 0.736 (section 2); from 0.220 to 0.704 (section 3). Mixtures of pure metals were sealed under vacuum in quartz ampoules and annealed at 350 o C. The solid phases identified in the samples were: γ-(i.e. Ni 5 Zn 21 ), (Zn) and the ternary phase T1. Unidentified compositions were observed. One of them: UX1 (X Ni = 0.071 ± 0.005, X Sn = 0.439 ± 0.009 and X Zn = 0.490 ± 0.010) might indicate another (stable or metastable) ternary compound (T3) in the system Sn-Zn-Ni. Considering the data obtained by combining DSC with microstructure observations, the studied alloys could be divided in two groups (A and B). A ternary eutectic reaction at around 190 o C is common for the A-group alloys. The phases taking part in this reaction are, probably, Ni 5 Zn 21 , (Zn), (βSn) and liquid. B-group samples do not show ternary eutectic reaction and are also characterized by the presence of the ternary compound T1 (absent in the A-group alloys). Four other groups of thermal arrests were registered (TA 1 -TA 4 ). It was found that TA 2 peaks were characteristic for most of the A-group samples, while TA 1 peaks were registered with all B-group samples.

Experimental study of Pulsed Laser Deposited Cu2ZnSnS 4 (CZTS) thin films for photovoltaic applications

Science.gov (United States)

Nandur, Abhishek S.

Thin film solar cells are gaining momentum as a renewable energy source. Reduced material requirements (15 mum in total thickness) solar cells. Among the various thin film solar absorbers that have been proposed, CZTS (Cu2ZnSnS4) has become the subject of intense interest because of its optimal band gap (1.45 eV), high absorption coefficient (104 cm--1 ) and abundant elemental components. Pulsed Laser Deposition (PLD) provides excellent control over film composition since films are deposited under high vacuum with excellent stoichiometry transfer from the target. Defect-free, near-stoichiometric poly-crystalline CZTS thin films were deposited using PLD from a stoichiometrically close CZTS target (Cu2.6Zn1.1Sn0.7S3.44). The effects of fabrication parameters such as laser energy density, deposition time, substrate temperature and sulfurization (annealing in sulfur) on the surface morphology, composition and optical absorption of the CZTS thin films were examined. The results show that the presence of secondary phases, present both in the bulk and on the surface, affected the electrical and optical properties of the CZTS thin films and the CZTS based TFSCs. After selectively etching away the secondary phases with DIW, HCl and KCN, it was observed that their removal improved the performance of CZTS based TFSCs. Optimal CZTS thin films exhibited an optical band gap of 1.54 eV with an absorption coefficient of 4x10 4cm-1 with a low volume of secondary phases. A TFSC fabricated with the best CZTS thin film obtained from the experimental study done in this thesis showed a conversion efficiency of 6.41% with Voc = 530 mV, Jsc= 27.5 mA/cm2 and a fill factor of 0.44.

Self-annealing in a two-phase Pb-Sn alloy after processing by high-pressure torsion

Energy Technology Data Exchange (ETDEWEB)

Zhang, Nian Xian [Materials Research Group, Faculty of Engineering and the Environment, University of Southampton, Southampton SO17 1BJ (United Kingdom); Chinh, Nguyen Q. [Department of Materials Physics, Eötvös Loránd University, 1117 Budapest, Pázmány Péter s. 1/A. (Hungary); Kawasaki, Megumi [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Departments of Aerospace & Mechanical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089-1453 (United States); Huang, Yi, E-mail: Y.Huang@soton.ac.uk [Materials Research Group, Faculty of Engineering and the Environment, University of Southampton, Southampton SO17 1BJ (United Kingdom); Langdon, Terence G. [Materials Research Group, Faculty of Engineering and the Environment, University of Southampton, Southampton SO17 1BJ (United Kingdom); Departments of Aerospace & Mechanical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089-1453 (United States)

2016-06-01

A Pb-62% Sn two-phase eutectic alloy was processed by high-pressure torsion (HPT) and stored at room temperature (RT) to investigate the occurrence of self-annealing. The microstructural characteristics and mechanical properties were recorded during self-annealing using scanning electron microscopy, tensile testing and nanoindentation. Processing by HPT produces a weakening effect but storage at RT leads to a gradual increase in the hardness together with significant grain growth. Nanoindentation tests were performed by applying both the indentation depth-time (h-t) relationship at the holding stage and the hardness, H, at various loading rates in order to explore the evolution of the strain rate sensitivity (SRS), m. The results obtained by tensile testing and nanoindentation are consistent despite the large difference in the volumes of the examined regions, thereby confirming the validity of using nanoindentation to measure the strain rate sensitivity.

Origin and tectonic implications of the Zhaxikang Pb-Zn-Sb-Ag deposit in northern Himalaya: evidence from structures, Re-Os-Pb-S isotopes, and fluid inclusions

Science.gov (United States)

Zhou, Qing; Li, Wenchang; Qing, Chengshi; Lai, Yang; Li, Yingxu; Liao, Zhenwen; Wu, Jianyang; Wang, Shengwei; Dong, Lei; Tian, Enyuan

2018-04-01

The Zhaxikang Pb-Zn-Sb-Ag-(Au) deposits, located in the eastern part of northern Himalaya, totally contain more than 1.146 million tonnes (Mt) of Pb, 1.407 Mt of Zn, 0.345 Mt of Sb, and 3 kilotonnes (kt) of Ag. Our field observations suggest that these deposits are controlled by N-S trending and west- and steep-dipping normal faults, suggesting a hydrothermal rather than a syngenetic sedimentary origin. The Pb-Zn-Sb-Ag-(Cu-Au) mineralization formed in the Eocene as indicated by a Re-Os isochron age of 43.1 ± 2.5 Ma. Sulfide minerals have varying initial Pb isotopic compositions, with (206Pb/204Pb)i of 19.04-19.68, (207Pb/204Pb)i of 15.75-15.88, and (208Pb/204Pb)i of 39.66-40.31. Sulfur isotopic values display a narrow δ34S interval of +7.8-+12.2‰. These Pb-S isotopic data suggest that the Zhaxikang sources of Pb and S should be mainly from the coeval felsic magmas and partly from the surrounding Mesozoic strata including metasedimentary rocks and layered felsic volcanic rocks. Fluid inclusion studies indicate that the hydrothermal fluids have medium temperatures (200-336 °C) but varying salinities (1.40-18.25 wt.% NaCl equiv.) with densities of 0.75-0.95 g/cm3, possibly suggesting an evolution mixing between a high salinity fluid, perhaps of magmatic origin, with meteoric water.

Controlled growth and thermal decomposition of well-dispersed and uniform ZnSn(OH)6 submicrocubes

International Nuclear Information System (INIS)

He, Qin; Zi, Junfeng; Huang, Baojun; Yan, Lingyu; Fa, Wenjun; Li, Dapeng; Zhang, Yange; Gao, Yuanhao; Zheng, Zhi

2014-01-01

Graphical abstract: Schematic illustration of the growth of the ZnSn(OH) 6 submicrocubes. - Highlights: • ZnSn(OH) 6 with perfect cubic shapes was formed through the chemical conversion. • We could control the morphologies of ZnSn(OH) 6 by changing reaction conditions. • Calcination of ZnSn(OH) 6 could produce different products. - Abstract: Well-dispersed and uniform ZnSn(OH) 6 submicrocubes with the average size of about 400 nm were successfully synthesized through the chemical conversion of different precipitates assisted by ultrasonic treatment and the subsequent aging process in an economical aqueous solution. The products were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), Thermogravimetric analysis (TG) and Differential scanning calorimetry (DSC). The growth mechanism has been proposed and the reaction conditions were carefully investigated. It was found experimentally that ultrasound irradiation, aging process and the presence of Na 2 CO 3 in the synthetic process had an impact on the formation of the ZnSn(OH) 6 submicrocubes. Additionally, the obtained ZnSn(OH) 6 submicrocubes can be applied for the preparation of the Zn 2 SnO 4 /SnO 2 mixtures by simple calcination

X-ray fluorescence analysis of Pb, Fe and Zn in kohl

Science.gov (United States)

Daar, Eman; Alsubaie, Abdullah; Almugren, K. S.; Barnes, S.; Alanazi, A.; Alyahyawi, A.; Alomairy, S.; Al-Sulaiti, H.; Bradley, D. A.

Kohl, a facial salve used in ancient times as a symbol of affluence, now enjoys more widespread traditional followings, for cosmetic, religious and supposed medicinal purposes. Popularly used by women and men of all ages, particularly those of North African, Middle Eastern, Southern Asia, Japanese and Chinese origins, it is also known to be used on neonates and children from such populations. With small-scale producers of kohl possessing a growing awareness of the adverse market impact of products that contain (lead) Pb and other toxicity related elements, some claim their products to be Pb-free, offering an apparent change from the more traditional galena-based (lead sulphide) media. Among the published physiological effects of exposure to Pb is that it replaces Ca in bones and teeth, making them weak and fragile, other impacts including nephrotoxicity, also linked with increased Pb blood levels in studies in Oman, Canada, Saudi Arabia, India and Pakistan. Current study involves XRF analysis of Pb, Fe and Zn concentrations in 135 samples of kohl from nine randomly selected suppliers (15 samples of each brand being represented). In pursuit of this, use was made of an in-house assembled facility comprising compact high-performance components, the arrangement offering sufficient sensitivity for the purposes of present study. In most of the samples investigated in the present study observation has been made of concentrations of Pb at elevated levels, quantification of those levels also demonstrating a need to address self-attenuation by the Pb itself. Significant concentration of Fe have also been found in several of the samples.

Sensing mechanism of SnO2/ZnO nanofibers for CH3OH sensors: heterojunction effects

Science.gov (United States)

Tang, Wei

2017-11-01

SnO2/ZnO composite nanofibers were synthesized by a simple electrospinning method. The prepared SnO2/ZnO gas sensors exhibited good linear and high response to methanol. The enhanced sensing behavior of SnO2/ZnO might be associated with the homotypic heterojunction effects formed in n-SnO2/n-ZnO nanograins boundaries. In addition, the possible sensing mechanisms of methanol on SnO2/ZnO surface were investigated by density functional theory in order to make the methanol adsorption and desorption process clear. Zn doped SnO2 model was adopted to approximate the SnO2/ZnO structure because of the calculation power limitations. Calculation results showed that when exposed to methanol, the methanol would react with bridge oxygen O2c , planar O3c and pre adsorbed oxygen vacancy on the lattice surface. The -CH3 and -OH of methanol molecule would both lose one H atom. The lost H atoms bonded with oxygen at the adsorption sites. The final products were HCHO and H2O. Electrons were transferred from methanol to the lattice surface to reduce the resistance of semiconductor gas sensitive materials, which is in agreement with the experimental phenomena. More adsorption models of other interfering gases, such as ethanol, formaldehyde and acetone will be built and calculated to explain the selectivity issue from the perspective of adsorption energy, transferred charge and density of states in the future work.

Effect of pyrolysis temperature on chemical form, behavior and environmental risk of Zn, Pb and Cd in biochar produced from phytoremediation residue.

Science.gov (United States)

Huang, Hui; Yao, Wenlin; Li, Ronghua; Ali, Amjad; Du, Juan; Guo, Di; Xiao, Ran; Guo, Zhanyu; Zhang, Zengqiang; Awasthi, Mukesh Kumar

2018-02-01

This study aimed to evaluate the chemical forms, behavior and environmental risk of heavy metal (HMs) Zn, Pb and Cd in phytoremediation residue (PMR) pyrolyzed at 350 °C, 550 °C and 750 °C, respectively. The behavior of HMs variation during the PMR pyrolysis process was analyzed and the potential HMs environmental risk of phytoremediation residue biochars (PMB) was assessed which was seldom investigated before. The results showed that the pyrolysis temperature increase decreased the soluble/exchangeable HMs fraction and alleviated the HMs bioavailability. When the temperature was over 550 °C, the adsorbed Zn(II), Pb(II) and Cd(II) were turned into oxides forms and concentrated in PMB with more stable forms exhibiting lower risk assessment code and potential ecological risk index. The ecotoxicity test showed higher pyrolysis temperature favored the reduction of PMB ecotoxicity. It is suggested that pyrolysis temperature above 550°C may be suitable for thermal treatment of PMR with acceptable environmental risk. Copyright © 2017 Elsevier Ltd. All rights reserved.

High efficiency bifacial Cu2ZnSnSe4 thin-film solar cells on transparent conducting oxide glass substrates

Directory of Open Access Journals (Sweden)

Jung-Sik Kim

2016-09-01

Full Text Available In this work, transparent conducting oxides (TCOs have been employed as a back contact instead of Mo on Cu2ZnSnSe4 (CZTSe thin-film solar cells in order to examine the feasibility of bifacial Cu2ZnSn(S,Se4 (CZTSSe solar cells based on a vacuum process. It is found that the interfacial reaction between flourine doped tin oxide (FTO or indium tin oxide (ITO and the CZTSe precursor is at odds with the conventional CZTSe/Mo reaction. While there is no interfacial reaction on CZTSe/FTO, indium in CZTSe/ITO was significantly diffused into the CZTSe layers; consequently, a SnO2 layer was formed on the ITO substrate. Under bifacial illumination, we achieved a power efficiency of 6.05% and 4.31% for CZTSe/FTO and CZTSe/ITO, respectively.

Structural and optical properties of Cu{sub 2}ZnSnS{sub 4} thin film absorbers from ZnS and Cu{sub 3}SnS{sub 4} nanoparticle precursors

Energy Technology Data Exchange (ETDEWEB)

Lin, Xianzhong, E-mail: lin.xianzhong@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Kavalakkatt, Jaison [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Berlin (Germany); Kornhuber, Kai; Levcenko, Sergiu [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Lux-Steiner, Martha Ch. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Berlin (Germany); Ennaoui, Ahmed, E-mail: ennaoui@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany)

2013-05-01

Cu{sub 2}ZnSnS{sub 4} (CZTS) has been considered as an alternative absorber layer to Cu(In,Ga)Se{sub 2} due to its earth abundant and environmentally friendly constituents, optimal direct band gap of 1.4–1.6 eV and high absorption coefficient in the visible range. In this work, we propose a solution-based chemical route for the preparation of CZTS thin film absorbers by spin coating of the precursor inks composed of Cu{sub 3}SnS{sub 4} and ZnS NPs and annealing in Ar/H{sub 2}S atmosphere. X-ray diffraction and Raman spectroscopy were used to characterize the structural properties. The chemical composition was determined by energy dispersive X-ray spectroscopy. Optical properties of the CZTS thin film absorbers were studied by transmission, reflection and photoluminescence spectroscopy.

Structural and physical properties of transparent conducting, amorphous Zn-doped SnO2 films

Science.gov (United States)

Zhu, Q.; Ma, Q.; Buchholz, D. B.; Chang, R. P. H.; Bedzyk, M. J.; Mason, T. O.

2014-01-01

The structural and physical properties of conducting amorphous Zn-doped SnO2 (a-ZTO) films, prepared by pulsed laser deposition, were investigated as functions of oxygen deposition pressure (pO2), composition, and thermal annealing. X-ray scattering and X-ray absorption spectroscopy measurements reveal that at higher pO2, the a-ZTO films are highly transparent and have a structural framework similar to that found in crystalline (c-), rutile SnO2 in which the Sn4+ ion is octahedrally coordinated by 6 O2- ions. The Sn4+ ion in these films however has a coordination number (CN) smaller by 2%-3% than that in c-SnO2, indicating the presence of oxygen vacancies, which are the likely source of charge carriers. At lower pO2, the a-ZTO films show a brownish tint and contain some 4-fold coordinated Sn2+ ions. Under no circumstances is the CN around the Zn2+ ion larger than 4, and the Zn-O bond is shorter than the Sn-O bond by 0.07 Å. The addition of Zn has no impact on the electroneutrality but improves significantly the thermal stability of the films. Structural changes due to pO2, composition, and thermal annealing account well for the changes in the physical properties of a-ZTO films.

Effect of Cu(II), Cd(II) and Zn(II) on Pb(II) biosorption by algae Gelidium-derived materials.

Science.gov (United States)

Vilar, Vítor J P; Botelho, Cidália M S; Boaventura, Rui A R

2008-06-15

Biosorption of Pb(II), Cu(II), Cd(II) and Zn(II) from binary metal solutions onto the algae Gelidium sesquipedale, an algal industrial waste and a waste-based composite material was investigated at pH 5.3, in a batch system. Binary Pb(II)/Cu(II), Pb(II)/Cd(II) and Pb(II)/Zn(II) solutions have been tested. For the same equilibrium concentrations of both metal ions (1 mmol l(-1)), approximately 66, 85 and 86% of the total uptake capacity of the biosorbents is taken by lead ions in the systems Pb(II)/Cu(II), Pb(II)/Cd(II) and Pb(II)/Zn(II), respectively. Two-metal results were fitted to a discrete and a continuous model, showing the inhibition of the primary metal biosorption by the co-cation. The model parameters suggest that Cd(II) and Zn(II) have the same decreasing effect on the Pb(II) uptake capacity. The uptake of Pb(II) was highly sensitive to the presence of Cu(II). From the discrete model it was possible to obtain the Langmuir affinity constant for Pb(II) biosorption. The presence of the co-cations decreases the apparent affinity of Pb(II). The experimental results were successfully fitted by the continuous model, at different pH values, for each biosorbent. The following sequence for the equilibrium affinity constants was found: Pb>Cu>Cd approximately Zn.

Studies on fully transparent Al-Sn-Zn-O thin-film transistors fabricated on glass at low temperature

Science.gov (United States)

Cong, Yingying; Han, Dedong; Wu, Jing; Zhao, Nannan; Chen, Zhuofa; Zhao, Feilong; Dong, Junchen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2015-04-01

High-performance fully transparent Al-Sn-Zn-O thin-film transistors (ATZO TFTs) with excellent electrical performance have been successfully fabricated by RF magnetron sputtering on glass at low temperatures. Two kinds of appropriate ATZO compositions are compared from several perspectives, including film material characteristics, device electrical performances, and fabrication process conditions. Finally, we achieve two excellent ATZO TFTs with competitive advantages. The ATZO TFT with larger amounts of dopants exhibits a superior field effect mobility μFE of 102.38 cm2 V-1 s-1, an ON/OFF current ratio (Ion/Ioff) of 1.18 × 107, and a threshold voltage VT of 1.35 V. The device with smaller amounts of dopants demonstrates better crystal quality and an excellent subthreshold swing SS of 155 mV/dec. Furthermore, it is less affected by oxygen partial pressure. The ATZO thin films display a high transmittance of over 80% in the visible light range.

Low resistivity ZnO-GO electron transport layer based CH{sub 3}NH{sub 3}PbI{sub 3} solar cells

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Muhammad Imran, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk; Hussain, Zakir; Mujahid, Mohammad; Khan, Ahmed Nawaz [School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad, 44000 (Pakistan); Javaid, Syed Saad [College of Aeronautical Engineering, National University of Sciences and Technology, Islamabad, 44000 (Pakistan); Habib, Amir, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk [School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad, 44000 (Pakistan); The Department of Physics, College of Sciences, University of Hafar Al Batin, P.O. Box 1803, Hafar Al Batin 31991 Saudi Arabia (Saudi Arabia)

2016-06-15

Perovskite based solar cells have demonstrated impressive performances. Controlled environment synthesis and expensive hole transport material impede their potential commercialization. We report ambient air synthesis of hole transport layer free devices using ZnO-GO as electron selective contacts. Solar cells fabricated with hole transport layer free architecture under ambient air conditions with ZnO as electron selective contact achieved an efficiency of 3.02%. We have demonstrated that by incorporating GO in ZnO matrix, low resistivity electron selective contacts, critical to improve the performance, can be achieved. We could achieve max efficiency of 4.52% with our completed devices for ZnO: GO composite. Impedance spectroscopy confirmed the decrease in series resistance and an increase in recombination resistance with inclusion of GO in ZnO matrix. Effect of temperature on completed devices was investigated by recording impedance spectra at 40 and 60 {sup o}C, providing indirect evidence of the performance of solar cells at elevated temperatures.

Formation of stable and metastable phases in reciprocal systems PbSe + MI2 = MSe + PbI2 (M = Hg, Mn, Sn)

International Nuclear Information System (INIS)

Odin, I.N.; Grin'ko, V.V.; Kozlovskij, V.F.; Safronov, E.V.; Gapanovich, M.V.

2004-01-01

Using data of differential thermal, X-ray phase and microstructural analyses, phase diagrams of reciprocal systems PbSe + MI 2 = MSe + PbI 2 (M=Hg (1), Mn (2), Sn (3)) were constructed. It was ascertained that the HgSe-PbI 2 diagonal in system 1 is stable. Transformations leading to crystallization of metastable ternary compound formed in the system PbSe-PbI 2 and metastable polytypes of lead iodide in systems 1 and 2 in the range of temperatures from 620 to 685 K were studied. New intermediate metastable phases in systems 1, 2 and 3 were prepared by melt quenching. Crystal lattice parameters of the phases crystallizing in the CdCl 2 structural type were defined [ru

Atomic size and local order effects on the high temperature strength of binary Mg alloys

Energy Technology Data Exchange (ETDEWEB)

Abaspour, Saeideh, E-mail: s.abaspour78@gmail.com [ARC-Centre of Excellence for Design in Light Metals, Materials Engineering, School of Engineering, The University of Queensland, Brisbane QLD 4072 (Australia); Queensland Centre for Advanced Materials Processing and Manufacturing (AMPAM), The University of Queensland (Australia); Zambelli, Victor [ARC-Centre of Excellence for Design in Light Metals, Materials Engineering, School of Engineering, The University of Queensland, Brisbane QLD 4072 (Australia); Dargusch, Matthew [Queensland Centre for Advanced Materials Processing and Manufacturing (AMPAM), The University of Queensland (Australia); Cáceres, Carlos H. [ARC-Centre of Excellence for Design in Light Metals, Materials Engineering, School of Engineering, The University of Queensland, Brisbane QLD 4072 (Australia)

2016-09-15

The solid solution strengthening introduced by Ca (0.6 and 0.9 at%) and Sn 0.5–2.5 at%) was studied through tensile, compression and stress relaxation tests at room temperature, 373 K (100 °C) and 453 K (180 °C) on solution heat-treated and quenched specimens and compared with existing data for binary alloys containing Ca, Sn, Y, Gd, Nd, Zn and Al as well as for AZ91 alloy. At room temperature the solution-hardening rate introduced by Ca and Sn was much higher than that of Al, matching those of Y, Gd and Zn. Calcium also reduced the tension/compression asymmetry. At high temperature Ca effectively prevented stress relaxation, nearly matching Y, Gd and Nd. Tin was less effective, but still outperformed Al and AZ91 at low stresses. The effects at room and high temperature introduced by Ca and Sn appeared consistent with the presence of short-range order, in line with those introduced by Y, Nd, Gd and Zn. The larger than Mg atom size of Ca, Nd, Gd and Y can be expected to intensify the local order by strengthening the atomic bonds through its effects on the local electron density, accounting for their greater strengthening at high temperature. For given difference in atomic size, the effects on the local order are expected to be lesser for smaller sized atoms like Sn and Zn, hence their more subdued effects.

First-principles calculations of structural, elastic, and electronic properties of trigonal ZnSnO{sub 3} under pressure

Energy Technology Data Exchange (ETDEWEB)

Liu, Qi-Jun, E-mail: qijunliu@home.swjtu.edu.cn [School of Physical Science and Technology, Southwest Jiaotong University, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Chengdu 610031 (China); Bond and Band Engineering Group, Sichuan Provincial Key Laboratory (for Universities) of High Pressure Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China); Qin, Han; Jiao, Zhen; Liu, Fu-Sheng [School of Physical Science and Technology, Southwest Jiaotong University, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Chengdu 610031 (China); Bond and Band Engineering Group, Sichuan Provincial Key Laboratory (for Universities) of High Pressure Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China); Liu, Zheng-Tang [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072 (China)

2016-09-01

First-principles calculations of the structural, elastic, mechanical and electronic properties of ilmenite-type ZnSnO{sub 3} under pressure have been investigated in the present paper. Our calculated lattice constants at zero pressure are in agreement with the published theoretical and experimental data. The elastic constants at zero and high pressure have been obtained, which are used to discuss the mechanical stability of ilmenite-type ZnSnO{sub 3}. The mechanical properties such as bulk modulus, shear modulus, Young’s modulus and Poisson’s ratio under pressure have been studied. Electronic properties show that ilmenite-type ZnSnO{sub 3} is shown to be a direct bandgap of 1.063 (GGA-PW91)/3.977 (PBE0) eV. The bandgap increases with the increasing pressure. Moreover, the partial density of states has been analyzed to explain the increased bandgap. - Highlights: • Physical properties of ilmenite-type ZnSnO{sub 3} under pressure have been investigated. • Ilmenite-type ZnSnO{sub 3} behaves in a ductile manner. • Ilmenite-type ZnSnO{sub 3} is a direct bandgap compound with 3.977 eV. • Bandgap of Ilmenite-type ZnSnO{sub 3} increases with the increasing pressure.

Fast Crystallization and improved Stability of Perovskite Solar Cells with Zn 2 SnO 4 Electron Transporting Layer: Interface Matters

KAUST Repository

Bera, Ashok; Sheikh, Arif D.; Haque, Mohammed; Bose, Riya; Alarousu, Erkki; Mohammed, Omar F.; Wu, Tao

2015-01-01

conversion efficiency of 13.34%, which is even higher than that achieved with the commonly used TiO2 in the similar experimental conditions (9.1%). Simple one-step spin coating of CH3NH3PbI3−xClx on Zn2SnO4 is found to lead to rapidly crystalized bilayer

The Low-Temperature Crystallization and Interface Characteristics of ZnInSnO/In Films Using a Bias-Crystallization Mechanism

International Nuclear Information System (INIS)

Chen, K. J.; Chen, K.J.; Hung, F.Y.; Lui, T.S.; Chang, S.J.; Hu, Z.S.

2012-01-01

This study presents a successful bias crystallization mechanism (BCM) based on an indium/glass substrate and applies it to fabrication of ZnInSnO (ZITO) transparent conductive oxide (TCO) films. The effects of bias-crystallization on electrical and structural properties of ZITO/In structure indicate that the current-induced Joule heating and interface diffusion were critical factors for low-temperature crystallization. With biases of 4 V and 0.1 A, the resistivity of the ZITO film was reduced from 3.08x10 -4 Ω * cm to 6.3x10 -5 Ω * cm. This reduction was attributed to the bias-induced energy, which caused indium atoms to diffuse into the ZITO matrix. This effectuated crystallizing the amorphous ZITO (a-ZITO) matrix at a lower temperature (approximately 170 degree C) for a short period (≤20 min) during a bias test. The low-temperature BCM developed for this study obtained an efficient conventional annealed treatment (higher temperature), possessed energy-saving and speed advantages, and can be considered a candidate for application in photoelectric industries.

Electrical, optical and etching properties of Zn-Sn-O thin films deposited by combinatorial sputtering

International Nuclear Information System (INIS)

Kim, J. S.; Park, J. K.; Baik, Y. J.; Kim, W. M.; Jeong, J.; Seong, T. Y.

2012-01-01

Zn-Sn-O (ZTO) films are known to be able to form an amorphous phase, which provides a smooth surface morphology as well as etched side wall, when deposited by using the conventional sputtering technique and, therefore, to have a potential to be applied as transparent thin film transistors. In this study, ZTO thin films were prepared by using combined sputtering of ZnO and SnO 2 targets, and the dependences of their electrical and optical properties on the composition and the deposition parameters were examined. The Sn content in the films was varied in the range of 35 ∼ 85 at .%. The deposition was carried out at room temperature, 150 and 300 .deg. C, and the oxygen content in sputtering gas was varied from 0 to 1 vol.%. Sn-rich films had better electrical properties, but showed large oxygen deficiency when deposited at low oxygen partial pressures. ZTO films with Sn contents lower than 55 at.% had good optical transmission, but the electrical properties were poor due to very low carrier concentrations. A high Hall mobility of larger than 10 cm 2 /Vs could be obtained in the carrier density range 10 17 ∼ 10 20 cm -3 , and the etching rate was measurable for films with Sn content up to 70 at.% when using a dilute HCl solution, indicating a good possibility of utilizing ZTO films for device applications.

Sensing mechanism of SnO2/ZnO nanofibers for CH3OH sensors: heterojunction effects

International Nuclear Information System (INIS)

Tang, Wei

2017-01-01

SnO 2 /ZnO composite nanofibers were synthesized by a simple electrospinning method. The prepared SnO 2 /ZnO gas sensors exhibited good linear and high response to methanol. The enhanced sensing behavior of SnO 2 /ZnO might be associated with the homotypic heterojunction effects formed in n -SnO 2 / n -ZnO nanograins boundaries. In addition, the possible sensing mechanisms of methanol on SnO 2 /ZnO surface were investigated by density functional theory in order to make the methanol adsorption and desorption process clear. Zn doped SnO 2 model was adopted to approximate the SnO 2 /ZnO structure because of the calculation power limitations. Calculation results showed that when exposed to methanol, the methanol would react with bridge oxygen O 2c , planar O 3c and pre adsorbed oxygen vacancy on the lattice surface. The –CH 3 and –OH of methanol molecule would both lose one H atom. The lost H atoms bonded with oxygen at the adsorption sites. The final products were HCHO and H 2 O. Electrons were transferred from methanol to the lattice surface to reduce the resistance of semiconductor gas sensitive materials, which is in agreement with the experimental phenomena. More adsorption models of other interfering gases, such as ethanol, formaldehyde and acetone will be built and calculated to explain the selectivity issue from the perspective of adsorption energy, transferred charge and density of states in the future work. (paper)

A theoretical search for intermetallic compounds and solution phases in the binary system Sn/Zn

Energy Technology Data Exchange (ETDEWEB)

Appen, Joerg von; Dronskowski, Richard; Hack, Klaus

2004-10-06

The binary system Sn/Zn was theoretically investigated by a classical thermodynamic analysis (CALPHAD approach) and by density-functional total-energy calculations on the basis of the LDA/GGA, plane waves/muffin-tin orbitals, and supercell geometries. In harmony with experimental data, both methods agree in that there is only very small solubility between the elements and no formation of a stable intermetallic phase over the entire compositional range. For the hypothetical composition Sn{sub 2}Zn, a total of 30 different crystal structures was quantum-mechanically optimized, and the chemical bondings of Sn{sub 2}Zn adopting the CaF{sub 2} and HgBr{sub 2} structures were analyzed in detail; generally, the more ionic structure types are better suited for the Sn{sub 2}Zn composition than typical intermetallic ones. Theoretical enthalphy-pressure diagrams were generated to explore high-pressure compound formation, and the observed transition pressures between the {alpha}, {beta} and {gamma} allotropes of tin were correctly reproduced by electronic structure theory.

Composition controlled preparation of Cu–Zn–Sn precursor films for Cu{sub 2}ZnSnS{sub 4} solar cells using pulsed electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Dang, Wenping; Ren, Xiaodong; Zi, Wei; Jia, Lujian [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, School of Materials Science and Engineering, Shaanxi Normal University, Xi' an 710062 (China); Liu, Shengzhong, E-mail: szliu@dicp.ac.cn [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, School of Materials Science and Engineering, Shaanxi Normal University, Xi' an 710062 (China); Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian, 116023 (China)

2015-11-25

A pulsed electrodeposition technique is developed to prepare Cu–Zn–Sn (CZT) precursor films for the Cu{sub 2}ZnSnS{sub 4} (CZTS) solar cells. The CZT precursor films are co-deposited on Mo-coated substrate using a cyanide-free electrolyte containing Zn (II) and Sn (II) salts. During the deposition, CuSO{sub 4} solution is supplied at controlled rate using a peristaltic pump to effectively regulate Cu{sup 2+} concentration. In addition, C{sub 6}H{sub 5}Na{sub 3}O{sub 7} is used as a coordination ligand to further balance activities of the Cu{sup 2+}, Sn{sup 2+} and Zn{sup 2+}. The CZTS films are then prepared using a sulfurization process to convert the electrodeposited CZT precursors at 580 °C in a sulphur atmosphere. The annealed thin films are characterized by X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FE-SEM), EDAX and X-ray photoelectron spectroscopy (XPS) techniques for their structural, morphological, compositional and chemical properties. It is found that the addition rate of Cu (II) has significant effects on the properties of the CZTS thin films. The CZTS film prepared using the optimized copper addition rate (0.15 ml/min) shows pure kesterite phase, Cu-poor and Zn-rich composition, compact morphology and good band gap ∼1.45 eV. Solar cells using the structure glass/Mo/CZTS/CdS/i-ZnO/ZnO:Al achieves a respectable external quantum efficiency and solar cell efficiency. - Highlights: • Developed a composition controlled pulsed electrodeposition for CZTS solar cells. • Electrochemistry and CZT composition regulated by measured Cu supply rate. • Complex chemistry used to regulate ion activities and electrodeposition. • Achieved a respectable CZTS solar cell quantum efficiency.

Defect properties of Sn- and Ge-doped ZnTe: suitability for intermediate-band solar cells

Science.gov (United States)

Flores, Mauricio A.

2018-01-01

We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+GW formalism. We find that ({{{Sn}}}{{Zn}}) and ({{{Ge}}}{{Zn}}) introduce isolated energy levels deep in the band gap of ZnTe, derived from Sn-5s and Ge-4s states, respectively. Moreover, the incorporation of Sn and Ge on the Zn site is favored in p-type ZnTe, in both Zn-rich and Te-rich environments. The optical absorption spectra obtained by solving the Bethe-Salpeter equation reveals that sub-bandgap absorptance is greatly enhanced due to the formation of the intermediate band. Our results suggest that Sn- and Ge-doped ZnTe would be a suitable material for the development of intermediate-band solar cells, which have the potential to achieve efficiencies beyond the single-junction limit.

16.1% Efficient Hysteresis-Free Mesostructured Perovskite Solar Cells Based on Synergistically Improved ZnO Nanorod Arrays

KAUST Repository

Mahmood, Khalid

2015-06-01

Significant efficiency improvements are reported in mesoscopic perovskite solar cells based on the development of a low-temperature solution-processed ZnO nanorod (NR) array exhibiting higher NR aspect ratio, enhanced electron density, and substantially reduced work function than conventional ZnO NRs. These features synergistically result in hysteresis-free, scan-independent, and stabilized devices with an efficiency of 16.1%. Electron-rich, nitrogen-doped ZnO (N:ZnO) NR-based electron transporting materials (ETMs) with enhanced electron mobility produced using ammonium acetate show consistently higher efficiencies by one to three power points than undoped ZnO NRs. Additionally, the preferential electrostatic interaction between the -nonpolar facets of N:ZnO and the conjugated polyelectrolyte polyethylenimine (PEI) has been relied on to promote the hydrothermal growth of high aspect ratio NR arrays and substantially improve the infiltration of the perovskite light absorber into the ETM. Using the same interactions, a conformal PEI coating on the electron-rich high aspect ratio N:ZnO NR arrays is -successfully applied, resulting in a favorable work function shift and altogether leading to the significant boost in efficiency from <10% up to >16%. These results largely surpass the state-of-the-art PCE of ZnO-based perovskite solar cells and highlight the benefits of synergistically combining mesoscale control with doping and surface modification. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

(V,Nb)-doped half Heusler alloys based on {Ti,Zr,Hf}NiSn with high ZT

International Nuclear Information System (INIS)

Rogl, G.; Sauerschnig, P.; Rykavets, Z.; Romaka, V.V.; Heinrich, P.; Hinterleitner, B.; Grytsiv, A.; Bauer, E.; Rogl, P.

2017-01-01

Half Heusler alloys are among the most promising materials for thermoelectric generators as they can be used in a wide temperature range and their starting materials are abundant and cheap, the latter as long as no hafnium is involved. For Sb-doped Ti 0.5 Zr 0.25 Hf 0.25 NiSn Sakurada and Shutoh in 2008 have published ZT max  = 1.5 at 690 K, a value that hitherto was never reproduced independently. In this paper we successfully prepared Ti 0.5 Zr 0.25 Hf 0.25 NiSn with ZT max  = 1.5, however, at higher temperature (825 K). As the main goal is to produce hafnium – free half Heusler alloys, we investigated the influence of niobium or vanadium dopants on Ti x Zr 1−x NiSn 0.98 Sb 0.02 , reaching ZTs > 1.2 and thermal-electric conversion efficiencies up to 13.1%. For Hf-free n-type TiNiSn-based half Heusler alloys these values are unsurpassed. In order to further improve our thermoelectric materials our study is completed by electrical resistivity and thermal conductivity data in the low temperature range but also by mechanical properties (elastic moduli, hardness) at room temperature. The electrical properties have been discussed in comparison with DFT calculations.

Highly enhanced photocurrent of novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films for photoelectrochemical applications

International Nuclear Information System (INIS)

Gohel, Jignasa V.; Jana, A.K.; Singh, Mohit

2017-01-01

A novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films synthesized by low-cost process. The properties of ZnO are also enhanced by doping and co-doping. It is also compared with quantum-dot co-sensitization. Optical properties, crystal structure, morphology, and photocurrent are characterized by UV-Vis spectroscopy, XRD, SEM, and solar simulator, respectively. The bandgap is interestingly reduced highly to 2.6 eV for Ag co-doped Cu:ZnO. It is unprecedentedly reduced to 2.1 eV and even 1.97 eV for CdS and PbS-Hg QD-sensitized thin films, respectively. An exceptionally enhanced photocurrent of 17.1 mA/cm"2 is achieved with PbS-Hg-co-sensitized CdS-sensitized Cu:ZnO thin film. This is an excellent achievement, which highly supports the potential of low-cost solar conversion. (orig.)

Highly enhanced photocurrent of novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films for photoelectrochemical applications

Energy Technology Data Exchange (ETDEWEB)

Gohel, Jignasa V.; Jana, A.K.; Singh, Mohit [Sardar Vallabhbhai National Institute of Technology, Chemical Engineering Department, Surat, Gujarat (India)

2017-08-15

A novel quantum-dot-co-sensitized PbS-Hg/CdS/Cu:ZnO thin films synthesized by low-cost process. The properties of ZnO are also enhanced by doping and co-doping. It is also compared with quantum-dot co-sensitization. Optical properties, crystal structure, morphology, and photocurrent are characterized by UV-Vis spectroscopy, XRD, SEM, and solar simulator, respectively. The bandgap is interestingly reduced highly to 2.6 eV for Ag co-doped Cu:ZnO. It is unprecedentedly reduced to 2.1 eV and even 1.97 eV for CdS and PbS-Hg QD-sensitized thin films, respectively. An exceptionally enhanced photocurrent of 17.1 mA/cm{sup 2} is achieved with PbS-Hg-co-sensitized CdS-sensitized Cu:ZnO thin film. This is an excellent achievement, which highly supports the potential of low-cost solar conversion. (orig.)

High pressure luminescence studies of localized excitations in ZnS doped with Pb2+ and Mn2+

International Nuclear Information System (INIS)

House, G.L.; Drickamer, H.G.

1977-01-01

High pressure luminescence measurements have been made on ZnS doped with Pb +2 and Mn +2 . The data include changes in peak energy and shape, integrated intensities, and lifetimes. These localized emissions are treated in terms of a single configuration coordinate model. For Pb +2 the emission peak shifted to lower energy by a moderate amount and narrowed. For excitation in the Pb +2 absorption the intensity was independent of pressure, which is consistent with the fact that the energy barrier for radiationless return to the ground state was high at all pressures. For excitation in the ZnS absorption edge the intensity decreased significantly with pressure above about 80 kbar. Data on shifts of the conduction band with pressure would indicate that one is approaching a transition from a direct to indirect transition at high pressure so that decrease in emission intensity may be associated with decreased absorption efficiency. The Mn+ 2 emission peak shifted strongly to lower energy with increasing pressure. The direction and magnitude of the shift were consistent with the predictions of ligand field theory. The intensity doubled in 100 kbar, while the lifetime decreased by roughly a factor of 2. These results could be described in terms of a model for a phonon assisted transition. In addition, peak location, intensity, and lifetime measurements were made on ZnS:Pb:Mn. There is clear evidence of energy transfer by exchange, but in addition there is a nonradiative process in the doubly doped crystal which affects both intensities and lifetimes

Crystal structure determination of solar cell materials: Cu2ZnSnS4 thin films using X-ray anomalous dispersion

International Nuclear Information System (INIS)

Nozaki, Hiroshi; Fukano, Tatsuo; Ohta, Shingo; Seno, Yoshiki; Katagiri, Hironori; Jimbo, Kazuo

2012-01-01

Highlights: ► Cu 2 ZnSnS 4 thin films as a solar cell material were synthesized. ► The wavelength dependences of the diffraction intensity were measured. ► The crystal structures were clearly identified as kesterite structure for all samples. ► Crystal structure analysis revealed that the atomic compositions were Cu/(Zn + Sn) = 0.97 and Zn/Sn = 1.42 for the sample synthesized using stoichiometric amount of starting materials. - Abstract: The crystal structure of Cu 2 ZnSnS 4 (CZTS) thin films fabricated by vapor-phase sulfurization was determined using X-ray anomalous dispersion. High statistic synchrotron radiation X-ray diffraction data were collected from very small amounts of powder. By analyzing the wavelength dependencies of the diffraction peak intensities, the crystal structure was clearly identified as kesterite. Rietveld analysis revealed that the atomic composition deviated from stoichiometric composition, and the compositions were Cu/(Zn + Sn) = 0.97, and Zn/Sn = 1.42.

Electronic structure and p-type doping of ZnSnN2

Science.gov (United States)

Wang, Tianshi; Janotti, Anderson; Ni, Chaoying

ZnSnN2 is a promising solar-cell absorber material composed of earth abundant elements. Little is known about doping, defects, and how the valence and conduction bands in this material align with the bands in other semiconductors. Using density functional theory with the the Heyd-Scuseria-Ernzerhof hybrid functional (HSE06), we investigate the electronic structure of ZnSnN2, its band alignment to other semiconductors, such as GaN and ZnO, the possibility of p-type doping, and the possible causes of the observed unintentional n-type conductivity. We find that the position of the valence-band maximum of ZnSnN2 is 0.55 eV higher than that of GaN, yet the conduction-band minimum is close to that in ZnO. As possible p-type dopants, we explore Li, Na, and K substituting on the Zn site. Finally, we discuss the cause of unintentional n-type conductivity by analyzing the position of the conduction-band minimum with respect to that of GaN and ZnO.

Electrical transport properties of spray deposited transparent conducting ortho-Zn2SnO4 thin films

Science.gov (United States)

Ramarajan, R.; Thangaraju, K.; Babu, R. Ramesh; Joseph, D. Paul

2018-04-01

Ortho Zinc Stannate (Zn2SnO4) exhibits excellent electrical and optical properties to serve as alternate transparent electrode in optoelectronic devices. Here we have optimized ortho-Zn2SnO4 thin film by spray pyrolysis method. Deposition was done onto a pre-heated glass substrate at a temperature of 400 °C. The XRD pattern indicated films to be polycrystalline with cubic structure. The surface of films had globular and twisted metal sheet like morphologies. Films were transparent in the visible region with band gap around 3.6 eV. Transport properties were studied by Hall measurements at 300 K. Activation energies were calculated from Arrhenius's plot from temperature dependent electrical measurements and the conduction mechanism is discussed.

Optical properties and surface characterization of pulsed laser-deposited Cu2ZnSnS4 by spectroscopic ellipsometry

International Nuclear Information System (INIS)

Crovetto, Andrea; Cazzaniga, Andrea; Ettlinger, Rebecca B.; Schou, Jørgen; Hansen, Ole

2015-01-01

Cu 2 ZnSnS 4 films prepared by pulsed laser deposition at different temperatures are characterized by spectroscopic ellipsometry. The focus is on confirming results from direct measurement techniques, by finding appropriate models of the surface overlayer for data fitting, and extracting the dielectric function of the films. It is found that the surface overlayer changes with film thickness and deposition temperature. Adopting different ellipsometry measurements and modeling strategies for each film, dielectric functions are extracted and compared. As the deposition temperature is increased, the dielectric functions exhibit additional critical points related to optical transitions in the material other than absorption across the fundamental band gap. In the case of a thin film < 200 nm thick, surface features observed by scanning electron microscopy and atomic force microscopy are accurately reproduced by ellipsometry data fitting. - Highlights: • Inhomogeneous Cu 2 ZnSnS 4 films are prepared by pulsed laser deposition. • The film surface includes secondary phases and topographic structures. • We model a film surface layer that fits ellipsometry data. • Ellipsometry data fits confirm results from direct measurement techniques. • We obtain the dielectric function of inhomogeneous Cu 2 ZnSnS 4 films

Spray pyrolysis deposition of Cu-ZnO and Zn-SnO{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Khelfane, A.; Tarzalt, H.; Sebboua, B.; Zerrouki, H.; Kesri, N., E-mail: kesri5n@gmail.com [Faculty of Physics, University of Science and Technology of Houari Boumediene, Algiers (Algeria)

2015-12-31

Large-gap metal oxides, such as titanium, tin, and zinc oxides, have attracted great interest because of their remarkable potential in dye-sensitized solar cells (DSSC) and their low cost and simple preparation procedure. In this work, we investigated several Zn-SnO{sub 2} and Cu-ZnO thin films that were sprayed under different experimental conditions. We varied [Zn/[Sn] and [Cu/[Zn] ratios, calculated on atomic percent in the starting solution. We report some structural results of the films using X-ray diffraction. Optical reflection and transmission spectra investigated by an UV/VIS/NIR spectrophotometer permit the determination of optical constants. The direct band gap was deduced from the photon energy dependence of the absorption coefficient.

One-step synthesis of PbSe-ZnSe composite thin film

Directory of Open Access Journals (Sweden)

Abe Seishi

2011-01-01

Full Text Available Abstract This study investigates the preparation of PbSe-ZnSe composite thin films by simultaneous hot-wall deposition (HWD from multiple resources. The XRD result reveals that the solubility limit of Pb in ZnSe is quite narrow, less than 1 mol%, with obvious phase-separation in the composite thin films. A nanoscale elemental mapping of the film containing 5 mol% PbSe indicates that isolated PbSe nanocrystals are dispersed in the ZnSe matrix. The optical absorption edge of the composite thin films shifts toward the low-photon-energy region as the PbSe content increases. The use of a phase-separating PbSe-ZnSe system and HWD techniques enables simple production of the composite package.

Determination of field-based sorption isotherms for Cd, Cu, Pb and Zn in Dutch soils

NARCIS (Netherlands)

Otte JG; Grinsven JJM van; Peijnenburg WJGM; Tiktak A; LBG; ECO

1999-01-01

Sorption isotherms for metals in soil obtained in the laboratory generally underpredict the observed metal content in the solid phase in the field. Isotherms based on in-situ data are therefore required. The aim of this study is to obtain field-based sorption isotherms for Cd, Cu, Pb and Zn as input

Facile synthesis of Zn-doped SnO{sub 2} dendrite-built hierarchical cube-like architectures and their application in lithium storage

Energy Technology Data Exchange (ETDEWEB)

Jia, Tiekun, E-mail: tiekunjia@126.com [Department of Materials Science and Engineering, Luoyang Institute of Science and Technology, Luoyang 471023 (China); Chen, Jian [Department of Materials Science and Engineering, Luoyang Institute of Science and Technology, Luoyang 471023 (China); Deng, Zhao [State Key Lab of Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Fu, Fang; Zhao, Junwei; Wang, Xiaofeng [Department of Materials Science and Engineering, Luoyang Institute of Science and Technology, Luoyang 471023 (China); Long, Fei [School of Materials Science and Engineering, Guilin University of Technology, Guilin 541004 (China)

2014-11-15

Highlights: • Novel Zn-doped SnO{sub 2} dendrite-built hierarchical cube-like architectures were synthesized via a facile hydrothermal approach without surfactant. • The Zn-doped SnO{sub 2} dendrite-built hierarchical cube-like architectures were assembled by pronounced needle-like nanorod truncks with highly ordered needle-like nanorod branches. • The as-obtained Zn-doped SnO{sub 2} sample exhibited good electrochemical property. - Abstract: Zn-doped SnO{sub 2} dendrite-built hierarchical cube-like architectures were successfully synthesized by a facile hydrothermal approach without the use of any surfactants or templates. The as-prepared samples were characterized by the X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), and Raman spectroscopy. The observation of FESEM and HRTEM showed that Zn-doped SnO{sub 2} hierarchical cube-like architectures were composed of numerous oriented dendrites. Each dendrite is assembled by a pronounced trunk with highly ordered branches distributing on the both sides. The as-prepared Zn-doped SnO{sub 2} dendrite-built hierarchical cube-like architectures were used as anode materials for Li-ion battery, and a stable capacity of 488.3 mA h g{sup −1} was achieved after 50 cycles. The results of electrochemical measurements indicated that the as-prepared Zn-doped SnO{sub 2} dendrite-built hierarchical cube-like architectures have potential application in Li-ion battery.

Sn-doped ZnO nanopetal networks for efficient photocatalytic degradation of dye and gas sensing applications

Energy Technology Data Exchange (ETDEWEB)

Bhatia, Sonik, E-mail: sonikbhatia@gmail.com [Department of Physics, Kanya Maha Vidyalaya, Vidyalaya Marg, Jalandhar, 144004 (India); Verma, Neha [Department of Physics, Kanya Maha Vidyalaya, Vidyalaya Marg, Jalandhar, 144004 (India); Bedi, R.K. [Satyam Institute of Engineering and Technology, Amritsar, 143107, Punjab (India)

2017-06-15

Highlights: • Tin doped ZnO nanoparticles were synthesized by simple combustion method and doctor blade technique. • Different concentrations of Sn (0.5 at. wt%, 1.0 at. wt%, 2.0 at. wt%, 3.0 at. wt%) were used as dopants. • 2.0% of Sn-doped ZnO nanoparticles exhibiting complete photodegradation of DR-31 dye under UV irradiation. Photocatalytic activities for all the samples were observed in 60 min. • The sensing performance showed 5% volume of ethanol and acetone and gases could be detected with sensitivity of 86.80% and 84.40% respectively. - Abstract: Nowadays, tremendous increase in environmental issue is an alarming threat to the ecosystem. This paper reports, rapid synthesis and characterization for tin doped ZnO nanoparticles prepared by simple combustion method and doctor blade technique. The prepared nanoparticles were characterized by several techniques in terms of their morphological, structural, compositional, optical, photocatalytic and gas sensing properties. These detailed characterization confirmed that all the synthesized nanoparticles are well crystalline and having good optoelectronic properties. Herein, different concentrations of Sn (0.5 at. wt%, 1.0 at. wt%, 2.0 at. wt%, 3.0 at. wt%) were used as dopants (SZ1–SZ4). The morphology of synthesized technique confirmed that the petal-shaped nanoparticles has high surface area and are well crystalline. In order to develop smart and functional nano-device, the prepared powder was coated on glass substrate by doctor blade technique and fabricated device was sensed for ethanol and acetone gas at different operating temperatures (300–500{sup °}C). It is noteworthy that morphology of the nanoparticles of the sensitive layer is maintained after different concentration of Sn. High sensitivity is the main cause of high surface area and tin doping. PL intensity near 598 nm of SZ3 is greater than other Sn-doped ZnO which indicates more oxygen vacancies of SZ3 is responsible for enhanced gas

Behaviors of heavy metals (Cd, Cu, Ni, Pb and Zn) in soil amended with composts.

Science.gov (United States)

Gusiatin, Zygmunt Mariusz; Kulikowska, Dorota

2016-09-01

This study investigated how amendment with sewage sludge compost of different maturation times (3, 6, 12 months) affected metal (Cd, Cu, Ni, Pb, Zn) bioavailability, fractionation and redistribution in highly contaminated sandy clay soil. Metal transformations during long-term soil stabilization (35 months) were determined. In the contaminated soil, Cd, Ni and Zn were predominately in the exchangeable and reducible fractions, Pb in the reducible fraction and Cu in the reducible, exchangeable and oxidizable fractions. All composts decreased the bioavailability of Cd, Ni and Zn for up to 24 months, which indicates that cyclic amendment with compost is necessary. The bioavailability of Pb and Cu was not affected by compost amendment. Based on the reduced partition index (IR), metal stability in amended soil after 35 months of stabilization was in the following order: Cu > Ni = Pb > Zn > Cd. All composts were more effective in decreasing Cd, Ni and Zn bioavailability than in redistributing the metals, and increasing Cu redistribution more than that of Pb. Thus, sewage sludge compost of as little as 3 months maturation can be used for cyclic amendment of multi-metal-contaminated soil.

A label-free colorimetric sensor for Pb2+ detection based on the acceleration of gold leaching by graphene oxide.

Science.gov (United States)

Shi, Xinhao; Gu, Wei; Zhang, Cuiling; Zhao, Longyun; Peng, Weidong; Xian, Yuezhong

2015-03-14

In this work, we developed a novel, label-free, colorimetric sensor for Pb(2+) detection based on the acceleration of gold leaching by graphene oxide (GO) at room temperature. Gold nanoparticles (AuNPs) can be dissolved in a thiosulfate (S2O3(2-)) aqueous environment in the presence of oxygen; however, the leaching rate is very slow due to the high activation energy (27.99 kJ mol(-1)). In order to enhance the reaction rate, some accelerators should be added. In comparison with the traditional accelerators (metal ions or middle ligands), we found that GO could efficiently accelerate the gold leaching reaction. Kinetic data demonstrate that the dissolution rate of gold in the Pb(2+)-S2O3(2-)-GO system is 5 times faster than that without GO at room temperature. In addition, the effects of surface modification and the nanoparticle size on the etching of AuNPs were investigated. Based on the GO-accelerated concentration-dependent colour changes of AuNPs, a colorimetric sensor for Pb(2+) detection was developed with a linear range from 0.1 to 20 μM and the limit of detection (LOD) was evaluated to be 0.05 μM. This colorimetric assay is simple, low-cost, label-free, and has numerous potential applications in the field of environmental chemistry.

Silver-bearing minerals in the Xinhua hydrothermal vein-type Pb-Zn deposit, South China

Science.gov (United States)

Wang, Minfang; Zhang, Xubo; Guo, Xiaonan; Pi, Daohui; Yang, Meijun

2018-02-01

Electron probe microanalysis (EPMA) results are reported for newly identified silver-bearing minerals from the Xinhua deposit, Yunkaidashan area, South China. The Xinhua deposit is a hydrothermal vein-type Pb-Zn deposit and is hosted in the Pubei Complex, which consists of a cordierite-biotite granite with a U-Pb zircon age of 244.3 ± 1.8-251.9 ± 2.2 Ma. The mineralization process is subdivided into four mineralization stages, characterized by the following mineral associations: mineralization stage I with quartz, pyrite, and sphalerite; mineralization stage II with siderite, galena, and tetrahedrite; mineralization stage III with quartz and galena; and mineralization stage IV with quartz, calcite, and baryte. Tetrahedrite series minerals, such as freibergite, argentotetrahedrite, and tennantite are the main Ag-bearing minerals in the Xinhua deposit. The greatest concentration of silver occurs in phases from mineralization stage II. Microscopic observations reveal close relationship between galena and tetrahedrite series minerals that mostly occur as irregular inclusions within galena. The negative correlation between Cu and Ag in the lattices of tetrahedrite series minerals suggests that Cu sites are occupied by Ag atoms. Zn substitution for Fe in argentotetrahedrite and Cd substitution for Pb in tetrahedrite are also observed. Micro-thermometric data reveal that both homogenization temperatures and calculated salinities of hydrothermal fluids decrease progressively from the early to the later mineralization stages. The metal ions, such as Ag+, Cu+, Pb2+, and Zn2+, are transported as chlorine complex ions in the early mineralization stage and as bisulfide complex ions in the late mineralization stage, caused by changes in oxygen fugacity, temperature, and pH of the hydrothermal fluids. Because of the varying solubility of different metal ions, Pb2+, Zn2+, and Cu2+ ions are initially precipitated as galena, sphalerite, and chalcopyrite, respectively. With