WorldWideScience

Sample records for zintl phases eu11zn6sb12

  1. The new Zintl phases Eu{sub 21}Cd{sub 4}Sb{sub 18} and Eu{sub 21}Mn{sub 4}Sb{sub 18}

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yi; Darone, Gregory M.; Bobev, Svilen, E-mail: bobev@udel.edu

    2016-06-15

    Crystals of two new Zintl compounds, Eu{sub 21}Mn{sub 4}Sb{sub 18} and Eu{sub 21}Cd{sub 4}Sb{sub 18} have been synthesized using the molten metal flux method, and their structures have been established by single-crystal X-ray diffraction. Both compounds are isotypic and crystallize in the monoclinic space group C2/m (No. 12, Z=4). The structures are based on edge- and corner-shared MnSb{sub 4} or CdSb{sub 4} tetrahedra, which make octameric [Mn{sub 8}Sb{sub 22}] or [Cd{sub 8}Sb{sub 22}] polyanions. Homoatomic Sb–Sb bonds are present in both structures. The Eu atoms take the role of Eu{sup 2+}cations with seven unpaired 4f electrons, as suggested by the temperature-dependent magnetization measurements. The magnetic susceptibilities of Eu{sub 21}Mn{sub 4}Sb{sub 18} and Eu{sub 21}Cd{sub 4}Sb{sub 18} indicate that both phases order anti-ferromagnetically with Néel temperatures of ca. 7 K and ca. 10 K, respectively. The unpaired 3d electrons of the Mn atoms in Eu{sub 21}Mn{sub 4}Sb{sub 18} do contribute to the magnetic response, however, the bulk magnetization measurements do not provide evidence for long-range ordering of the Mn spins down to 5 K. Electrical resistivity measurements suggest that both compounds are narrow band gap semiconductors. - Graphical abstract: Eu{sub 21}Mn{sub 4}Sb{sub 18} and Eu{sub 21}Cd{sub 4}Sb{sub 18} have complex monoclinic structures, based on MnSb{sub 4} and CdSb{sub 4} tetrahedra, both edge- and corner-shared. A perspective of the crystal structure is shown, as viewed along the b axis. Display Omitted - Highlights: • Eu{sub 21}Mn{sub 4}Sb{sub 18} and Eu{sub 21}Cd{sub 4}Sb{sub 18} are novel compounds in the respective ternary phase diagrams. • For both structures, the Zintl-Klemm rules are followed, and both are small gap semiconductors. • Eu{sub 21}Mn{sub 4}Sb{sub 18} and Eu{sub 21}Cd{sub 4}Sb{sub 18} are air-stable Zintl phases and could be new thermoelectric materials.

  2. Eu{sub 7}Ga{sub 6}Sb{sub 8}: A Zintl phase with Ga-Ga bonds and polymeric gallium antimonide chains

    Energy Technology Data Exchange (ETDEWEB)

    Park, S -M; Kim, S -J; Kanatzidis, M G

    2004-08-01

    The Zintl phase Eu{sub 7}Ga{sub 6}Sb{sub 8} was obtained from a direct element combination reaction at 900 deg. C. It crystallizes in the orthorhombic space group Pbca (No. 61) with a=15.6470(17) A, b=17.2876(19) A, c=17.9200(19) A, and Z=8. In Eu{sub 7}Ga{sub 6}Sb{sub 8}, the anionic framework forms infinite chains of [Ga{sub 6}Sb{sub 8}]{sup 14-} which are arranged side by side to make a sheet-like arrangement but without linking. The sheets of chains are separated by Eu{sup 2+} atoms and also within the sheet, Eu{sup 2+} atoms fill the spaces between two chains. The chain is made up of homoatomic tetramers (Ga{sub 4}){sup 6+} and dimers (Ga{sub 2}){sup 4+} connected by Sb atoms. The compound is a narrow band-gap semiconductor with E{sub g}{approx}0.6 eV and satisfies the classical Zintl concept. Extended Hueckel band structure calculations confirm that the material is a semiconductor and suggest that the structure is stabilized by strong Ga-Ga covalent bonding interactions. Magnetic susceptibility measurements for Eu{sub 7}Ga{sub 6}Sb{sub 8} show that the Eu atoms are divalent and the compound has an antiferromagnetic transition at 9 K.

  3. Syntheses, and crystal and electronic structures of the new Zintl phases Na2ACdSb2 and K2ACdSb2 (A=Ca, Sr, Ba, Eu, Yb): Structural relationship with Yb2CdSb2 and the solid solutions Sr2-xAxCdSb2, Ba2-xAxCdSb2 and Eu2-xYbxCdSb2

    International Nuclear Information System (INIS)

    Saparov, Bayrammurad; Saito, Maia; Bobev, Svilen

    2011-01-01

    Presented are the details of the syntheses, crystal and electronic structures of a new family of Zintl phases Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb), as well as the solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 and Eu 2-x Yb x CdSb 2 . The structures of Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) were determined to be of a new type with the non-centrosymmetric space group Pmc2 1 (no. 26), Pearson symbol oP12, with lattice parameters a=4.684(1)-4.788(1) A; b=9.099(3)-9.117(2) A; c=7.837(1)-8.057(2) A for the Na 2 ACdSb 2 series, and a=4.6637(9)-5.0368(8) A; b=9.100(2)-9.8183(15) A; and c=7.7954(15)-8.4924(13) A for K 2 ACdSb 2 , respectively. The solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 and Eu 2-x Yb x CdSb 2 (x∼1) are isostructural and isoelectronic to the recently reported Yb 2 CdSb 2 (space group Cmc2 1 (no. 36), Pearson symbol cP20). All discussed structures are based upon CdSb 2 4- polyanionic layers, similar to the ones observed in Yb 2 CdSb 2 , with various alkali- and/or alkaline-earth cations coordinated to them. Magnetic susceptibility and Seebeck coefficient measurements on selected Eu 2-x Yb x CdSb 2 samples, taken at low temperatures up to 300 K, are also reported. -- Graphical abstract: The quaternary Zintl phases Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) with novel layered structures have been synthesized for the first time and structurally characterized by single-crystal X-ray diffraction. Reported as well are the results from crystallographic and property studies of the closely related solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 (x∼1), and Eu 2-x Yb x CdSb 2 (1 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) are new quaternary Zintl phases. → Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 (x∼1), and Eu 2-x Yb x CdSb 2 (1 4 tetrahedra. → Eu 2-x Yb x CdSb 2 (1< x<2) exhibit high Seebeck coefficient (217 μV/K at RT).

  4. Eu9Cd4-xCM2+x-y□ySb9: Ca9Mn4Bi9-type structure stuffed with coinage metals (Cu, Ag, and Au) and the challenges with classical valence theory in describing these possible zintl phases.

    Science.gov (United States)

    Kazem, Nasrin; Hurtado, Antonio; Klobes, Benedikt; Hermann, Raphaël P; Kauzlarich, Susan M

    2015-02-02

    The synthesis, crystal structure, magnetic properties, and europium Mössbauer spectroscopy of the new members of the 9-4-9 Zintl family of Eu(9)Cd(4-x)CM(2+x-y)□(y)Sb(9) (CM = coinage metal: Au, Ag, and Cu) are reported. These compounds crystallize in the Ca(9)Mn(4)Bi(9) structure type (9-4-9) with the 4g interstitial site almost half-occupied by coinage metals; these are the first members in the 9-4-9 family where the interstitial positions are occupied by a monovalent metal. All previously known compounds with this structure type include divalent interstitials where these interstitials are typically the same as the transition metals in the anionic framework. Single-crystal magnetic susceptibility data indicate paramagnetic behavior for all three compounds with antiferromagnetic ordering below 10 K (at 100 Oe) that shifts to lower temperature (x)CM(2+x-y)□(y)Sb(9) at 50 and 6.5 K in order to evaluate the valence of Eu cations. Although the Zintl formalism states that the five crystallographically distinct Eu sites in Eu(9)Cd(4-x)CM(2+x-y)□(y)Sb9 should bear Eu(2+), the Mössbauer spectral isomer shifts are clearly indicative of both 2+ and 3+ valence of the Eu cations with the Cu- and Au-containing compounds showing higher amounts of Eu(3+). This electronic configuration leads to an excess of negative charge in these compounds that contradicts the expected valence-precise requirement of Zintl phases. The spectra obtained at 6.5 K reveal magnetic ordering for both Eu(2+) and Eu(3+). The field dependence of Eu(2+) indicates two distinct magnetic sublattices, with higher and lower fields, and of a small field for Eu(3+). The site symmetry of the five Eu sites is not distinguishable from the Mössbauer data.

  5. Role of the dimensionality of the [GaX]2 network in the Zintl phases EuGa2X2

    KAUST Repository

    Singh, Nirpendra

    2012-11-28

    The structural, electronic, magnetic, optical, and thermoelectric properties of EuGa2X2 (X = P, As, and Sb) are investigated using first principles calculations (taking into account the onsite Coulomb interaction) and the semi-classical Boltzmanntheory. The divalent nature of Eu fulfils the Zintl principle as is confirmed by the calculated total magnetic moments of ∼7 μB. A metallic behavior is obtained for all compounds. The optical spectra originate mainly from the transitions between occupied Eu 4f states and unoccupied Eu 5d states. It is demonstrated that the two-dimensional [Ga(P/As)]2 network in EuGa2P2 and EuGa2As2 is favorable for thermoelectric applications as compared to the three-dimensional [GaSb]2 network in EuGa2Sb2.

  6. Ga-Ga bonding and tunnel framework in the new Zintl phase Ba{sub 3}Ga{sub 4}Sb{sub 5}

    Energy Technology Data Exchange (ETDEWEB)

    Park, S -M; Kim, S -J; Kanatzidis, M G

    2003-11-01

    A new Zintl phase Ba{sub 3}Ga{sub 4}Sb{sub 5} was obtained from the reaction of Ba and Sb in excess Ga flux at 1000 deg. C, and its structure was determined with single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a=13.248(3) A, b=4.5085(9) A, c=24.374(5) A and Z=4. Ba{sub 3}Ga{sub 4}Sb{sub 5} has a three-dimensional [Ga{sub 4}Sb{sub 5}]{sup 6-} framework featuring large tunnels running along the b-axis and accommodating the Ba ions. The structure also has small tube-like tunnels of pentagonal and rhombic cross-sections. The structure contains ethane-like dimeric Sb{sub 3}Ga-GaSb{sub 3} units and GaSb{sub 4} tetrahedra that are connected to form 12- and 14-membered tunnels. Band structure calculations confirm that the material is a semiconductor and indicate that the structure is stabilized by strong Ga-Ga covalent bonding interactions.

  7. Ba{sub 4}In{sub 8}Sb{sub 16}: Thermoelectric properties of a new layered Zintl phase with infinite zigzag Sb chains and pentagonal tubes

    Energy Technology Data Exchange (ETDEWEB)

    Kim, S J; Hu, S; Uher, C; Kanatzidis, M G

    1999-11-01

    A new Zintl phase Ba{sub 4}In{sub 8}Sb{sub 16} was obtained from a direct element combination reaction of the elements in a sealed graphite tube at 700 C, and its structure was determined by single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a = 10.166(3) {angstrom}, b = 4.5239(14) {angstrom}, c = 19.495(6) {angstrom}, and Z = 1. Ba{sub 4}In{sub 8}Sb{sub 16} has a two-dimensional structure with thick corrugated (In{sub 8}Sb{sub 16}){sup 8{minus}} layers separated by Ba{sup 2+} ions. In the layer, InSb{sub 4} tetrahedra are connected by sharing three corners and by bridging the fourth corner in such a manner that infinite pentagonal tubes are formed. The compound is a narrow band gap ({approximately} 0.10 eV) semiconductor and satisfies the classical Zintl rule. Band structure calculations confirm that the material is a semiconductor and indicate that it has optimized In-Sb bonding interactions. Polycrystalline ingots of Ba{sub 4}In{sub 8}Sb{sub 16} show room-temperature electrical conductivity of 135 S/cm and a Seebeck coefficient of 70 {micro}V/K. The thermal conductivity of Ba{sub 4}In{sub 8}Sb{sub 16} is about 1.7 W/m{sm{underscore}bullet}K in the temperature range 150--300 K.

  8. Ternary CaCu4P2-type pnictides AAg4Pn2 (A=Sr, Eu; Pn=As, Sb)

    Science.gov (United States)

    Stoyko, Stanislav S.; Khatun, Mansura; Scott Mullen, C.; Mar, Arthur

    2012-08-01

    Four ternary pnictides AAg4Pn2 (A=Sr, Eu; Pn=As, Sb) were prepared by reactions of the elements at 850 °C and their crystal structures were determined from single-crystal X-ray diffraction studies. These silver-containing pnictides AAg4Pn2 adopt the trigonal CaCu4P2-type structure (Pearson symbol hR21, space group R3¯m, Z=3; a=4.5555(6) Å, c=24.041(3) Å for SrAg4As2; a=4.5352(2) Å, c=23.7221(11) Å for EuAg4As2; a=4.7404(4) Å, c=25.029(2) Å for SrAg4Sb2; a=4.7239(3) Å, c=24.689(2) Å for EuAg4Sb2), which can be derived from the trigonal CaAl2Si2-type structure of the isoelectronic zinc-containing pnictides AZn2Pn2 by insertion of additional Ag atoms into trigonal planar sites within [M2Pn2]2- slabs built up of edge-sharing tetrahedra. Band structure calculations on SrAg4As2 and SrAg4Sb2 revealed that these charge-balanced Zintl phases actually exhibit no gap at the Fermi level and are predicted to be semimetals.

  9. Structural and thermoelectric properties of zintl-phase CaLiPn (Pn=As, Sb, Bi)

    Energy Technology Data Exchange (ETDEWEB)

    Chandran, Anoop K.; Gudelli, Vijay Kumar; Sreeparvathy, P.C.; Kanchana, V., E-mail: kanchana@iith.ac.in

    2016-11-15

    First-principles calculations were carried out to study the structural, mechanical, dynamical and transport properties of zintl phase materials CaLiPn (Pn=As, Sb and Bi). We have used two different approaches to solve the system based on density functional theory. The plane wave pseudopotential approach has been used to study the structural and dynamical properties whereas, full potential linear augment plane wave method is used to examine the electronic structure, mechanical and thermoelectric properties. The calculated ground-state properties agree quite well with experimental values. The computed electronic structure shows the investigated compounds to be direct band gap semiconductors. Further, we have calculated the thermoelectric properties of all the investigated compounds for both the carriers at various temperatures. We found a high thermopower for both the carriers, especially n-type doping to be more favourable, which enabled us to predict that CaLiPn might have promising applications as a good thermoelectric material. Further, the phonon dispersion curves of the investigated compounds showed flat phonon modes and we also find lower optical and acoustic modes to cut each other at the lower frequency range, which further indicate the investigated compounds to possess reasonably low thermal conductivity. We have also analysed the low value of the thermal conductivity through the empirical relations and discussions are presented here. - Highlights: • Electronic band structure and chemical bonding. • Single crystalline elastic constants and poly crystalline elastic moduli. • Thermoelectric properties of zintl phase. • Lattice dynamics and phonon density of states.

  10. Synthesis and structural characterization of the Zintl phases Na{sub 3}Ca{sub 3}TrPn{sub 4}, Na{sub 3}Sr{sub 3}TrPn{sub 4}, and Na{sub 3}Eu{sub 3}TrPn{sub 4} (Tr=Al, Ga, In; Pn=P, As, Sb)

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yi [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States); Suen, Nian-Tzu [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States); College of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002 (China); Kunene, Thabiso; Stoyko, Stanislav [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States); Bobev, Svilen, E-mail: bobev@udel.edu [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States)

    2017-05-15

    15 new quaternary Zintl phases have been synthesized by solid-state reactions from the respective elements, and their structures have been determined by single-crystal X-ray diffraction. Na{sub 3}E{sub 3}TrPn{sub 4} (E=Ca, Sr, Eu; Tr=Al, Ga, In; Pn=P, As, Sb) crystallize in the hexagonal crystal system with the non-centrosymmetric space group P6{sub 3}mc (No. 186). The structure represents a variant of the K{sub 6}HgS{sub 4} structure type (Pearson index hP22) and features [TrPn{sub 4}]{sup 9–} tetrahedral units, surrounded by Na{sup +} and Ca{sup 2+}, Sr{sup 2+}, Eu{sup 2+} cations. The nominal formula rationalization [Na{sup +}]{sub 3}[E{sup 2+}]{sub 3}[TrPn{sub 4}]{sup 9–} follows the octet rule, suggesting closed-shell configurations for all atoms and intrinsic semiconducting behavior. However, structure refinements for several members hint at disorder and mixing of cations that potentially counteract the optimal valence electron count. - Graphical abstract: The hexagonal, non-centrosymmetric structure of Na{sub 3}E{sub 3}TrPn{sub 4} (E=Ca, Sr, Eu; Tr=Al, Ga, In; Pn=P, As, Sb) features [TrPn{sub 4}]{sup 9–} tetrahedral units, surrounded by Na{sup +} and Ca{sup 2+}, Sr{sup 2+}, Eu{sup 2+} cations. - Highlights: • 15 quaternary phosphides, arsenides, and antimonides are synthesized and structurally characterized. • The structure is a variant of the hexagonal K{sub 6}HgS{sub 4}-type, with distinctive pattern for the cations. • Occupational and/or positional disorder of yet unknown origin exists for some members of the series.

  11. Ternary CaCu4P2-type pnictides AAg4Pn2 (A=Sr, Eu; Pn=As, Sb)

    International Nuclear Information System (INIS)

    Stoyko, Stanislav S.; Khatun, Mansura; Scott Mullen, C.; Mar, Arthur

    2012-01-01

    Four ternary pnictides AAg 4 Pn 2 (A=Sr, Eu; Pn=As, Sb) were prepared by reactions of the elements at 850 °C and their crystal structures were determined from single-crystal X-ray diffraction studies. These silver-containing pnictides AAg 4 Pn 2 adopt the trigonal CaCu 4 P 2 -type structure (Pearson symbol hR21, space group R3-bar m, Z=3; a=4.5555(6) Å, c=24.041(3) Å for SrAg 4 As 2 ; a=4.5352(2) Å, c=23.7221(11) Å for EuAg 4 As 2 ; a=4.7404(4) Å, c=25.029(2) Å for SrAg 4 Sb 2 ; a=4.7239(3) Å, c=24.689(2) Å for EuAg 4 Sb 2 ), which can be derived from the trigonal CaAl 2 Si 2 -type structure of the isoelectronic zinc-containing pnictides AZn 2 Pn 2 by insertion of additional Ag atoms into trigonal planar sites within [M 2 Pn 2 ] 2− slabs built up of edge-sharing tetrahedra. Band structure calculations on SrAg 4 As 2 and SrAg 4 Sb 2 revealed that these charge-balanced Zintl phases actually exhibit no gap at the Fermi level and are predicted to be semimetals. - Graphical abstract: SrAg 4 As 2 and related pnictides adopt a CaCu 4 P 2 -type structure in which additional Ag atoms enter trigonal planar sites within slabs built from edge-sharing tetrahedra. Highlights: ► AAg 4 Pn 2 are the first Ag-containing members of the CaCu 4 P 2 -type structure. ► Ag atoms are stuffed in trigonal planar sites within CaAl 2 Si 2 -type slabs. ► Ag–Ag bonding develops through attractive d 10 –d 10 interactions.

  12. Crystallographic study of the intermediate compounds SbZn, Sb3Zn4 and Sb2Zn3

    International Nuclear Information System (INIS)

    Adjadj, Fouzia; Belbacha, El-djemai; Bouharkat, Malek; Kerboub, Abdellah

    2006-01-01

    The processes of development of semiconductor ceramics made up of bismuth, antimony and zinc often require during their preparation to know the nature of the involved phases. For that, it is always essential to refer to the diagrams of balance between phases of the binary systems or ternary. We presented in this work the study by X-rays diffraction relating to the intermediate compounds SbZn, Sb 3 Zn 4 and Sb 2 Zn 3 . The analysis by X-rays is often useful to give supplement the results of the other experimental methods

  13. Phase change behaviors of Zn-doped Ge2Sb2Te5 films

    International Nuclear Information System (INIS)

    Wang Guoxiang; Nie Qiuhua; Shen Xiang; Fu Jing; Xu Tiefeng; Dai Shixun; Wang, R. P.; Wu Liangcai

    2012-01-01

    Zn-doped Ge 2 Sb 2 Te 5 phase-change materials have been investigated for phase change memory applications. Zn 15.16 (Ge 2 Sb 2 Te 5 ) 84.84 phase change film exhibits a higher crystallization temperature (∼258 °C), wider band gap (∼0.78 eV), better data retention of 10 years at 167.5 °C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge 2 Sb 2 Te 5 . The proper Zn atom added into Ge 2 Sb 2 Te 5 serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.

  14. The characterization of Co xZn7-xSb2O12 spinel obtained by the pechini method

    Directory of Open Access Journals (Sweden)

    Deiby Santos Gouveia

    2005-06-01

    Full Text Available Oxides with spinel structures have been studied for many decades as they have been used in a variety of applications like pigments and refractories. They have also been used as a model structure to evaluate the relative stability of ions in octahedral and tetrahedral sites. Zinc- antimony spinels (Zn7Sb2O12 were synthesized by the Pechini method and the cation Zn2+ was substituted by Co2+, taking into consideration the stoichiometry of Co xZn7-xSb2O12 (x = 0 - 7. Characterization of the thermal properties of pyrolyzed powders was carried out with a TG/DTA analyzer, and mass losses were determined as a function of the cobalt content in the resin. The powders were calcined at temperatures in the range 600 to 1000 °C and characterized by XRD, BET and IR spectroscopy. Maximum cristalinity was obtained in powders calcined at 1000 °C. Materials with x = 5 - 7 revealed the presence of a secondary phase (Co, ZnSb2O6. Infrared analysis facilitated in the determination of the possible sites of Zn2+, Co2+ and Sb2+ ions in the lattice.

  15. The single crystal structure determination of Ln{sub 6}MnSb{sub 15} (Ln=La, Ce), Ln{sub 6}Mn{sub 1-x}Zn{sub x}Sb{sub 15} (x∝0.5), and Ln{sub 6}ZnSb{sub 15} (Ln=La-Pr)

    Energy Technology Data Exchange (ETDEWEB)

    Benavides, Katherine A.; McCandless, Gregory T.; Chan, Julia Y. [Texas Univ., Dallas, Richardson, TX (United States). Dept. of Chemistry and Biochemistry

    2017-09-01

    Single crystals of Ln{sub 6}MnSb{sub 15} (Ln=La, Ce), Ln{sub 6}Mn{sub 1-x}Zn{sub x}Sb{sub 15} (x∝0.5), and Ln{sub 6}ZnSb{sub 15} (Ln=La-Pr) have been successfully grown and the compounds adopt the orthorhombic Ln{sub 6}MnSb{sub 15} structure type (space group Immm), with a∝4.3 Aa, b∝15 Aa, and c∝19 Aa. This structure is comprised of antimony nets and antimony ribbons which exhibit positional disorder at connecting points between antimony substructures, in addition to two partially occupied transition metal sites. The unit cell volumes of the La analogs displayed a systematic decrease upon Zn substitution. However, for the Ce{sub 6}Mn{sub 1-x}Zn{sub x}Sb{sub 15} and Pr{sub 6}Mn{sub 1-x}Zn{sub x}Sb{sub 15} (x∝0.5), the volumes deviate from linearity as observed in the parent compounds.

  16. Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films for high thermal stability and long data retention phase-change memory

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Shiyu; Wu, Weihua [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Science, Shanghai 200050 (China)

    2017-04-15

    Highlights: • Sb{sub 7}Te{sub 3} (ST) provides a fast crystallization speed, low melting temperature. • The Sb{sub 7}Te{sub 3}/ZnSb films exhibits faster crystallization speed, high thermal stability. • The calculated temperature for 10-year data retention is about 127 {sup o}C. • The Sb{sub 7}Te{sub 3}/ZnSb multilayer configuration with low power consumption. - Abstract: Phase-change memory is regard as one of the most promising candidates for the next-generation non-volatile memory. In this work, we proposed a Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films to improve the thermal stability of Sb-rich Sb{sub 3}Te{sub 7}. The sheet resistance ratio between amorphous and crystalline states reached up to 4 orders of magnitude. With regard to the thermal stability, the calculated temperature for 10-year data retention is about 127 °C. The threshold current and threshold voltage of a cell based on Sb{sub 7}Te{sub 3}/ZnSb are 6.9 μA and 1.9 V, respectively. The lower RESET power is presented in the PCM cells of Sb{sub 7}Te{sub 3}/ZnSb films, benefiting from its high resistivity.

  17. Ternary CaCu{sub 4}P{sub 2}-type pnictides AAg{sub 4}Pn{sub 2} (A=Sr, Eu; Pn=As, Sb)

    Energy Technology Data Exchange (ETDEWEB)

    Stoyko, Stanislav S.; Khatun, Mansura; Scott Mullen, C. [Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2 (Canada); Mar, Arthur, E-mail: arthur.mar@ualberta.ca [Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2 (Canada)

    2012-08-15

    Four ternary pnictides AAg{sub 4}Pn{sub 2} (A=Sr, Eu; Pn=As, Sb) were prepared by reactions of the elements at 850 Degree-Sign C and their crystal structures were determined from single-crystal X-ray diffraction studies. These silver-containing pnictides AAg{sub 4}Pn{sub 2} adopt the trigonal CaCu{sub 4}P{sub 2}-type structure (Pearson symbol hR21, space group R3-bar m, Z=3; a=4.5555(6) A, c=24.041(3) A for SrAg{sub 4}As{sub 2}; a=4.5352(2) A, c=23.7221(11) A for EuAg{sub 4}As{sub 2}; a=4.7404(4) A, c=25.029(2) A for SrAg{sub 4}Sb{sub 2}; a=4.7239(3) A, c=24.689(2) A for EuAg{sub 4}Sb{sub 2}), which can be derived from the trigonal CaAl{sub 2}Si{sub 2}-type structure of the isoelectronic zinc-containing pnictides AZn{sub 2}Pn{sub 2} by insertion of additional Ag atoms into trigonal planar sites within [M{sub 2}Pn{sub 2}]{sup 2-} slabs built up of edge-sharing tetrahedra. Band structure calculations on SrAg{sub 4}As{sub 2} and SrAg{sub 4}Sb{sub 2} revealed that these charge-balanced Zintl phases actually exhibit no gap at the Fermi level and are predicted to be semimetals. - Graphical abstract: SrAg{sub 4}As{sub 2} and related pnictides adopt a CaCu{sub 4}P{sub 2}-type structure in which additional Ag atoms enter trigonal planar sites within slabs built from edge-sharing tetrahedra. Highlights: Black-Right-Pointing-Pointer AAg{sub 4}Pn{sub 2} are the first Ag-containing members of the CaCu{sub 4}P{sub 2}-type structure. Black-Right-Pointing-Pointer Ag atoms are stuffed in trigonal planar sites within CaAl{sub 2}Si{sub 2}-type slabs. Black-Right-Pointing-Pointer Ag-Ag bonding develops through attractive d{sup 10}-d{sup 10} interactions.

  18. Incorporación de la fase Zn7Sb2O12 previamente sintetizada en varistores cerámicos basados en ZnO

    Directory of Open Access Journals (Sweden)

    Caballero, A. C.

    2002-02-01

    Full Text Available During the sintering process of ZnO-Bi2O3-Sb2O3 based varistors, different reactions take place. The formation of the Zn7Sb2O12 spinel phase occurs between 900 and 1100ºC depending on the composition of the material. The spinel phase acts as ZnO grain growth inhibitor and its distribution on the whole material as a secondary phase in the matrix of ZnO grains determines the kinetics of grain growth. However, it is difficult to control the nucleation and growth of this phase, and this concerns on the final grain size and consequently on the characteristics of the varistor device. The present study has focused on the incorporation of the previously synthesized spinel phase. Scanning Electronic Microscopy analysis of sintered samples reveals a better control of microstructure in those materials with the synthesized spinel phase. The electrical behaviour of these materials agrees with the microstructural features and a greater reproducibility is observed.Una de las reacciones que tiene lugar durante la sinterización de varistores cerámicos basados en el sistema ZnO-Bi2O3-Sb2O3 es la formación de la fase Zn7Sb2O12, de estructura tipo espinela, que ocurre en el intervalo de temperaturas comprendido entre 900 y 1100ºC, dependiendo de la composición específica del material. Esta fase es la responsable del control del crecimiento de grano y su distribución en el seno del material como una segunda fase dispersa en la matriz mayoritaria de granos de ZnO determinará la cinética del crecimiento de los granos. Sin embargo, el proceso de nucleación y crecimiento de esta fase resulta difícil de controlar cuantitativamente, aspecto que se refleja en las características finales del dispositivo varistor obtenido. En el presente trabajo se analiza el efecto de la incorporación de la fase espinela previamente sintetizada a partir de los óxidos de zinc y antimonio. El análisis mediante Microscopía Electrónica de Barrido (MEB de la microestructura de

  19. Preparation of the Wire of ZChSnSb11-6 Used for Remanufacturing Thermal Spraying

    Science.gov (United States)

    Zhang, B.; Yang, Z. Y.; Fu, D. X.; Li, X. F.; Chen, W.

    Tin base Babbitt alloy widely used in bearing bush production and repair, the performance of ZChSnSb11-6 is better than ZChSnSb8-4.But as a result of as-cast structure of ZChSnSb11-6 is rich in big hard phase, its processing performance is bad, in this paper, through the optimization of smelting, casting, extrusion, drawing and other processes we have been successfully prepared ZChSnSb11-6 wire suitable for thermal spraying. Through metallographic examination, micro hardness, bond strength and porosity testing, it was proved that the wire meet the requirements of bearing manufacturing thermal spraying.

  20. Triangular Zn{sub 3} and Ga{sub 3} units in Sr{sub 2}Au{sub 6}Zn{sub 3}, Eu{sub 2}Au{sub 6}Zn{sub 3}, Sr{sub 2}Au{sub 6}Ga{sub 3}, and Eu{sub 2}Au{sub 6}Ga{sub 3}. Structure, magnetism, {sup 151}Eu Moessbauer and {sup 69;71}Ga solid state NMR spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Gerke, Birgit; Niehaus, Oliver; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Korthaus, Alexander; Haarmann, Frank [RWTH Aachen Univ. (Germany). Inst. fuer Anorganische Chemie

    2016-08-01

    The gold-rich intermetallic compounds Sr{sub 2}Au{sub 6}Zn{sub 3}, Eu{sub 2}Au{sub 6}Zn{sub 3}, Sr{sub 2}Au{sub 6}Ga{sub 3}, and Eu{sub 2}Au{sub 6}Ga{sub 3} were synthesized from the elements in sealed tantalum ampoules in induction or muffle furnaces. The europium compounds are reported for the first time and their structures were refined from single crystal X-ray diffractometer data: Sr{sub 2}Au{sub 6}Zn{sub 3} type, R anti 3c, a = 837.7(1), c = 2184.5(4) pm, wR2 = 0.0293, 572 F{sup 2} values for Eu{sub 2}Au{sub 6.04}Zn{sub 2.96} and a = 838.1(2), c = 2191.7(5) pm, wR2 = 0.0443, 513 F{sup 2} values for Eu{sub 2}Au{sub 6.07}Ga{sub 2.93} with 20 variables per refinement. The structures consist of a three-dimensional gold network with a 6R stacking sequence, similar to the respective diamond polytype. The cavities of the network are filled in a ratio of 2:1 by strontium (europium) atoms and Ga{sub 3} (Zn{sub 3}) triangles in an ordered manner. Sr{sub 2}Au{sub 6}Zn{sub 3} and Sr{sub 2}Au{sub 6}Ga{sub 3} are diamagnetic with room temperature susceptibilities of -3.5 x 10{sup -4} emu mol{sup -1}. Temperature dependent susceptibility and {sup 151}Eu Moessbauer spectroscopic measurements show a stable divalent ground state for both europium compounds. Eu{sub 2}Au{sub 6}Zn{sub 3} and Eu{sub 2}Au{sub 6}Ga{sub 3} order antiferromagnetically below Neel temperatures of 16.3 and 12.1 K, respectively. Anisotropic electrical conductivity of Sr{sub 2}Au{sub 6}Ga{sub 3} is proven by an alignment of the crystallites in the magnetic field. Orientation-dependent {sup 69;71}Ga NMR experiments combined with quantum mechanical calculations (QM) give evidence for a highly anisotropic charge distribution of the Ga atoms.

  1. Yb14MnSb11 as a High-Efficiency Thermoelectric Material

    Science.gov (United States)

    Snyder, G. Jeffrey; Gascoin, Franck; Brown, Shawna; Kauzlarich, Susan

    2009-01-01

    Yb14MnSb11 has been found to be wellsuited for use as a p-type thermoelectric material in applications that involve hotside temperatures in the approximate range of 1,200 to 1,300 K. The figure of merit that characterizes the thermal-to-electric power-conversion efficiency is greater for this material than for SiGe, which, until now, has been regarded as the state-of-the art high-temperature ptype thermoelectric material. Moreover, relative to SiGe, Yb14MnSb11 is better suited to incorporation into a segmented thermoelectric leg that includes the moderate-temperature p-type thermoelectric material CeFe4Sb12 and possibly other, lower-temperature p-type thermoelectric materials. Interest in Yb14MnSb11 as a candidate high-temperature thermoelectric material was prompted in part by its unique electronic properties and complex crystalline structure, which place it in a class somewhere between (1) a class of semiconducting valence compounds known in the art as Zintl compounds and (2) the class of intermetallic compounds. From the perspective of chemistry, this classification of Yb14MnSb11 provides a first indication of a potentially rich library of compounds, the thermoelectric properties of which can be easily optimized. The concepts of the thermoelectric figure of merit and the thermoelectric compatibility factor are discussed in Compatibility of Segments of Thermo - electric Generators (NPO-30798), which appears on page 55. The traditional thermoelectric figure of merit, Z, is defined by the equation Z = alpha sup 2/rho K, where alpha is the Seebeck coefficient, rho is the electrical resistivity, and k is the thermal conductivity.

  2. Evolution of Thermoelectric Properties of Zn4Sb3 Prepared by Mechanical Alloying and Different Consolidation Routes

    Directory of Open Access Journals (Sweden)

    Pee-Yew Lee

    2018-05-01

    Full Text Available In this research, a method combining the mechanical alloying with the vacuum sintering or hot pressing was adopted to obtain the compact of β-Zn4Sb3. Pure zinc and antimony powders were used as the starting material for mechanical alloying. These powders were mixed in the stoichiometry ratio of 4 to 3, or more Zn-rich. Single phase Zn4Sb3 was produced using a nominally 0.6 at. % Zn rich powder. Thermoelectric Zn4Sb3 bulk specimens have been fabricated by vacuum sintering or hot pressing of mechanically alloyed powders at various temperatures from 373 to 673 K. For the bulk specimens sintering at high temperature, phase transformation of β-Zn4Sb3 to ZnSb and Sb was observed due to Zn vaporization. However, single-phase Zn4Sb3 bulk specimens with 97.87% of theoretical density were successfully produced by vacuum hot pressing at 473 K. Electric resistivity, Seebeck coefficient, and thermal conductivity were evaluated for the hot pressed specimens from room temperature to 673 K. The results indicate that the Zn4Sb3 shows an intrinsic p-type behavior. The increase of Zn4Sb3 phase ratio can increase Seebeck coefficient but decrease electric conductivity. The maximum power factor and figure of merit (ZT value were 1.31 × 10−3 W/mK2 and 0.81 at 600 K, respectively. The ZT value was lower than that reported in the available data for materials prepared by conventional melt growth and hot pressed methods, but higher than the samples fabricated by vacuum melting and heat treatment techniques.

  3. Cationic Site-Preference in the Yb14-xCaxAlSb11 (4.81 ≤ x ≤ 10.57 Series: Theoretical and Experimental Studies

    Directory of Open Access Journals (Sweden)

    Gnu Nam

    2016-07-01

    Full Text Available Four quaternary Zintl phases with mixed-cations in the Yb14-xCaxAlSb11 (4.81 ≤ x ≤ 10.57 series have been synthesized by using the arc-melting and the Sn metal-flux reaction methods, and the isotypic crystal structures of the title compounds have been characterized by both powder and single-crystal X-ray diffraction (PXRD and SXRD analyses. The overall crystal structure adopting the Ca14AlSb11-type can be described as a pack of four different types of the spiral-shaped one-dimensional octahedra chains with various turning radii, each of which is formed by the distorted ((Yb/CaSb6 octahedra. Four symmetrically-independent cationic sites contain mixed occupations of Yb2+ and Ca2+ with different mixing ratios and display a particular site preference by two cationic elements. Two hypothetical structural models of Yb4Ca10AlSb11 with different cationic arrangements were designed and exploited to study the details of site and bond energies. QVAL values provided the rationale for the observed site preference based on the electronegativity of each atom. Density of states (DOS curves indicated a semiconducting property of the title compounds, and crystal orbital Hamilton population (COHP plots explained individual chemical bonding between components. Thermal conductivity measurement was performed for Yb8.42(4Ca5.58AlSb11, and the result was compared to compounds without mixed cations.

  4. Epitaxial growth of Sb-doped nonpolar a-plane ZnO thin films on r-plane sapphire substrates by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hou-Guang, E-mail: houguang@isu.edu.tw [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China); Hung, Sung-Po [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China)

    2014-02-15

    Highlights: ► Sb-doped nonpolar a-plane ZnO layers were epitaxially grown on sapphire substrates. ► Crystallinity and electrical properties were studied upon growth condition and doping concentration. ► The out-of-plane lattice spacing of ZnO films reduces monotonically with increasing Sb doping level. ► The p-type conductivity of ZnO:Sb film is closely correlated with annealing condition and Sb doping level. -- Abstract: In this study, the epitaxial growth of Sb-doped nonpolar a-plane (112{sup ¯}0) ZnO thin films on r-plane (11{sup ¯}02) sapphire substrates was performed by radio-frequency magnetron sputtering. The influence of the sputter deposition conditions and Sb doping concentration on the microstructural and electrical properties of Sb-doped ZnO epitaxial films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and the Hall-effect measurement. The measurement of the XRD phi-scan indicated that the epitaxial relationship between the ZnO:Sb layer and sapphire substrate was (112{sup ¯}0){sub ZnO}//(11{sup ¯}02){sub Al{sub 2O{sub 3}}} and [11{sup ¯}00]{sub ZnO}//[112{sup ¯}0]{sub Al{sub 2O{sub 3}}}. The out-of-plane a-axis lattice parameter of ZnO films was reduced monotonically with the increasing Sb doping level. The cross-sectional transmission electron microscopy (XTEM) observation confirmed the absence of any significant antimony oxide phase segregation across the thickness of the Sb-doped ZnO epitaxial film. However, the epitaxial quality of the films deteriorated as the level of Sb dopant increased. The electrical properties of ZnO:Sb film are closely correlated with post-annealing conditions and Sb doping concentrations.

  5. Photoluminescence of rare-earth ion (Eu3+, Tm3+, and Er3+)-doped and co-doped ZnNb2O6 for solar cells

    Science.gov (United States)

    Gao, Sen-Pei; Qian, Yan-Nan; Wang, Biao

    2015-08-01

    Visible converted emissions produced at an excitation of 286 nm in ZnNb2O6 ceramics doped with rare-earth ions (RE = Eu3+, Tm3+, Er3+ or a combination of these ions) were investigated with the aim of increasing the photovoltaic efficiency of solar cells. The structure of RE:ZnNb2O6 ceramics was confirmed by x-ray diffraction patterns. The undoped ZnNb2O6 could emit a blue emission under 286-nm excitation, which is attributed to the self-trapped excitons’ recombination of the efficient luminescence centers of edge-shared NbO6 groups. Upon 286-nm excitation, Eu:ZnNb2O6, Tm:ZnNb2O6, and Er:ZnNb2O6 ceramics showed blue, green, and red emissions, which correspond to the transitions of 5D0 → 7FJ (J = 1-4) (Eu3+), 1G4 → 3H6 (Tm3+), and 2H11/2/4S3/2 → 4I15/2 (Er3+), respectively. The calculated CIE chromaticity coordinates of Eu:ZnNb2O6, Tm:ZnNb2O6, and Er:ZnNb2O6 are (0.50, 0.31), (0.14, 0.19), and (0.29, 0.56), respectively. RE ion-co-doped ZnNb2O6 showed a combination of characteristic emissions. The chromaticity coordinates of Eu/Tm:ZnNb2O6, Eu/Er:ZnNb2O6, and Tm/Er:ZnNb2O6 were calculated to be (0.29, 0.24), (0.45, 0.37), and (0.17, 0.25). Project supported by the National Natural Science Foundation of China (Grant Nos. 10572155 and 10732100) and the Research Fund for the Doctoral Program of Ministry of Education, China (Grant No. 20130171130003).

  6. Effect of Varying Pnictogen Elements (Pn=N, P, As, Sb, Bi) on the Optoelectronic Properties of SrZn2Pn2

    Science.gov (United States)

    Murtaza, G.; Yousaf, N.; Laref, A.; Yaseen, M.

    2018-03-01

    Pnictogen-based Zintl compounds have fascinating properties. Nowadays these compounds have gained exceptional interest in thermoelectric and optoelectronic fields. Therefore, in this work the structural, electronic and optical properties of SrZn2Pn2 (Pn=N, P, As, Sb, Bi) compounds were studied using state-of-the-art density functional theory. The optimised lattice parameters (ɑ, c, c/ɑ and bond lengths) are consistent with the experimental results. The bulk moduli and c/a showed a decrease when changing the Pnictogen (Pn) anion from N to Bi in SrZn2Pn2 (Pn=N, P, As, Sb, Bi). The modified Becke-Johnson potential is used for band structure calculations. All compounds show semiconducting behaviour except SrZn2Bi2, which is metallic. Pn-p, Zn-d and Sr-d play an important role in defining the electronic structure of the compounds. The optical conductivity and absorption coefficient strength are high in visible and ultraviolet regions. These band structures and optical properties clearly show that SrZn2Pn2 compounds are potential candidates in the fields of optoelectronic and photonic devices.

  7. First principles electronic structure and optical properties of the Zintl compound Eu3In2P4

    KAUST Repository

    Singh, Nirpendra; Schwingenschlö gl, Udo

    2011-01-01

    We have performed full-potential calculations of the electronic structure and optical properties of the newly found Zintl compound Eu3In 2P4. Eu3In2P4 turns out to be a small gap semiconductor with an energy gap of 0.42 eV, which is in agreement with the experimental value of 0.452 eV. The peaks of the optical spectra originate mainly from transitions between occupied Eu 4f states in the valence band and unoccupied Eu 5d states in the conduction band. A considerable anisotropy is observed for the parallel and perpendicular components in the frequency dependent optical spectra. The spectral features are explained in terms of the band structure. © 2011 Elsevier B.V. All rights reserved.

  8. First principles electronic structure and optical properties of the Zintl compound Eu3In2P4

    KAUST Repository

    Singh, Nirpendra

    2011-05-01

    We have performed full-potential calculations of the electronic structure and optical properties of the newly found Zintl compound Eu3In 2P4. Eu3In2P4 turns out to be a small gap semiconductor with an energy gap of 0.42 eV, which is in agreement with the experimental value of 0.452 eV. The peaks of the optical spectra originate mainly from transitions between occupied Eu 4f states in the valence band and unoccupied Eu 5d states in the conduction band. A considerable anisotropy is observed for the parallel and perpendicular components in the frequency dependent optical spectra. The spectral features are explained in terms of the band structure. © 2011 Elsevier B.V. All rights reserved.

  9. Thermoelectric properties of In{sub 0.2}Co{sub 4}Sb{sub 12} skutterudites with embedded PbTe or ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Chubilleau, C.; Lenoir, B.; Candolfi, C.; Masschelein, P. [Université de Lorraine, CNRS, UMR 7198, Institut Jean Lamour, Parc de Saurupt, 54011 Nancy (France); Dauscher, A., E-mail: anne.dauscher@univ-lorraine.fr [Université de Lorraine, CNRS, UMR 7198, Institut Jean Lamour, Parc de Saurupt, 54011 Nancy (France); Guilmeau, E. [Laboratoire CRISMAT, UMR 6508, 6 boulevard Maréchal Juin, 14050 Caen Cedex (France); Godart, C. [ICMPE-CMTR, CNRS-UMR 7182, 2-8 rue H. Dunant, 94320 Thiais (France)

    2014-03-15

    Highlights: • Fabrication of nanostructured skutterudites ZnO or PbTe/In{sub 0.2}Co{sub 4}Sb{sub 12.} • Thermal conductivity modeling accounts for experimental results. • Greater lattice thermal conductivity decrease in In{sub 0.2}Co{sub 4}Sb{sub 12} than in CoSb{sub 3}. • A max ZT of 1.05 is obtained at 700 K in a 2 wt% ZnO-containing sample. -- Abstract: Transport properties of the skutterudite compound In{sub 0.2}Co{sub 4}Sb{sub 12} containing ZnO or PbTe nano-sized particles (2–12 wt%) were investigated by means of electrical resistivity, thermopower and thermal conductivity between 5 and 800 K. The composite powders were prepared by freeze-drying the nanoparticles with micron-sized In{sub 0.2}Co{sub 4}Sb{sub 12} powders. Densification was achieved by spark plasma sintering. All composites were characterized by X-ray powder diffraction and scanning electron microscopy. All the transport coefficients show similar temperature dependences suggesting little influence of the nature, semiconducting or insulating, of the nanoparticles. Both the electrical and the thermal conductivities decrease with increasing the PbTe or ZnO content. The impact of ZnO and PbTe on the thermal conductivity was modelled based on the Debye model taking into account a relaxation time constant reflecting phonon scattering by spherical nanoparticles. A maximum dimensionless figure of merit ZT of 1.05 at 700 K was achieved in a sample containing 2 wt% ZnO, a value quite similar to that of the reference In{sub 0.2}Co{sub 4}Sb{sub 12} compound.

  10. Low-temperature synthesis of single-phase Co7Sb2O12

    International Nuclear Information System (INIS)

    Brito, M.S.L.; Escote, M.T.; Santos, C.O.P.; Lisboa-Filho, P.N.; Leite, E.R.; Oliveira, J.B.L.; Gama, L.; Longo, E.

    2004-01-01

    Polycrystalline Co 7 Sb 2 O 12 compounds have been synthesized by a chemical route, which is based on a modified polymeric precursor method. In order to study the physical properties of the samples, X-ray diffraction (XRD), thermal analyses (TG and DSC), infrared spectroscopy (IR), specific surface area (BET), and magnetization measurements were performed on these materials. Characterization through XRD revealed that the samples are single-phase after a heat-treatment at 1100 deg. C for 2 h, while the X-ray patterns of the samples heat-treated at lower temperatures revealed the presence of additional Bragg reflections belonging to the Co 6 Sb 2 O 6 phase. These data were analyzed by means of Rietveld refinement and further analyze showed that Co 7 Sb 2 O 12 displays an inverse spinel crystalline structure. In this structure, the Co 2+ ions occupy the eight tetrahedral positions, and the sixteen octahedral positions are randomly occupied by the Sb 5+ and Co 2+ ions. IR studies disclosed two strong absorption bands, ν 1 and ν 2 , in the expected spectral range for a spinel-type binary oxide with space group Fd3m. Exploratory studies concerning the magnetic properties indicated that this sample presents a spin-glass transition at T f ∼ 64 K

  11. A new solid solution compound with the Sr{sub 21}Mn{sub 4}Sb{sub 18} structure type. Sr{sub 13}Eu{sub 8}Cd{sub 3}Mn{sub 1}Sb{sub 18}

    Energy Technology Data Exchange (ETDEWEB)

    Kunz Wille, Elizabeth L.; Cooley, Joya A.; Fettinger, James C.; Kazem, Nasrin; Kauzlarich, Susan M. [California Univ., Davis, CA (United States). Dept. of Chemistry

    2017-09-01

    The title compound with the nominal formula, Sr{sub 13}Eu{sub 8}Cd{sub 3}Mn{sub 1}Sb{sub 18}, was synthesized by Sn-flux. Structure refinement was based on single-crystal X-ray diffractometer data. Employing the exact composition, the formula is Sr{sub 13.23}Eu{sub 7.77}Cd{sub 3.12}Mn{sub 0.88}Sb{sub 18} for the solid solution Sr{sub 21-x}Eu{sub x}Cd{sub 4-y}Mn{sub y}Sb{sub 18}. This phase adopts the Sr{sub 21}Mn{sub 4}Sb{sub 18} type structure with site preferences for both Eu and Cd. The structure crystallizes in the monoclinic system in space group C2/m and Z=4: a=18.1522(11), b=17.3096(10), c=17.7691(10) Aa, β=91.9638(8) , 6632 F{sup 2} values, 216 variables, R1=0.0254 and wR2=0.0563. Site selectivity of the elements in this new compound will be discussed in relationship with the Sr{sub 21}Mn{sub 4}Sb{sub 18} type structure and other related structure types. Temperature dependent magnetic susceptibility data reveal Curie-Weiss paramagnetism with an experimental moment of 19.3 μ{sub B}/f.u. and a Weiss constant of 0.4 K. Magnetic ordering is seen at low temperatures, with a transition temperature of 3.5 K.

  12. Microstructure and Mechanical Properties of Mg-11Li-6Zn-0.6Zr-0.4Ag-0.2Ca-x Y Alloys.

    Science.gov (United States)

    Kim, Yong-Ho; Yoo, Hyo-Sang; Son, Hyeon-Taek

    2018-09-01

    Magnesium and its alloys are potential candidates for many automotive and aerospace applications due to their low density and high specific strength. However, the use of magnesium as wrought products is limited because of its poor workability at ambient temperatures. Mg-Li alloys containing 5-11 wt.% Li exhibit a two-phase structure consisting of a α (hcp) Mg-rich phase and a β (bcc) Li-rich phase. Mg-Li alloys with Li content greater than 11 wt.% exhibit a single-phase structure consisting of only the β phase. In the present study, we studied the effects of Y addition on the microstructure and mechanical properties of Mg-11Li-6Zn-0.6Zr-0.4Ag-0.2Ca based alloys. The melt was maintained at 720 °C for 20 min and poured into a mold. Then, the as-cast Mg alloys were homogenized at 350 °C for 4 h and were hot-extruded onto a 4-mm-thick plate with a reduction ratio of 14:1. The as-cast Mg-11Li-6Zn-0.6Zr-0.4Ag-0.2Ca-xY (x 0, 1, 3, and 5 wt.%) alloys were composed of α-Mg, β-Li, γ-Mg2Zn3Li, I-Mg3YZn6, W-Mg3Y2Zn3, and X-Mg12YZn phases. By increasing the Y content from 0 to 5 wt.%, the composition of the W-Mg3Y2Zn3 phase increased. With increasing Y content, from 0 to 1, 3, and 5 wt.%, the average grain size and ultimate tensile of the as-extruded Mg alloys decreased slightly, from 8.4, to 3.62, 3.56, and 3.44 μm and from 228.92 to 215.57, 187.47, and 161.04 MPa, respectively, at room temperature.

  13. Crystal structure and bonding characteristics of In-doped β-Zn4Sb3

    International Nuclear Information System (INIS)

    Tang, Dingguo; Zhao, Wenyu; Cheng, Sudan; Wei, Ping; Yu, Jian; Zhang, Qingjie

    2012-01-01

    The effects of indium impurity on the crystal structure and bonding characteristics of In-doped β-Zn 4 Sb 3 were investigated by powder X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The XRD Rietveld refinement indicates that the indium impurity preferentially substitutes one of Sb atoms in Sb–Sb dimer at the 12c Sb(2) site and simultaneously leads to the increase of Zn occupancy. The observations of binding energy shift and a new valence state in Sb 3d core-level XPS spectra can be attributed to the charge transfer from In and Zn to Sb. As a result, more electropositive Zn atoms are needed to maintain the charge balance. The reduction of the lattice thermal conductivity is ascribed to the formation of the asymmetric Sb–In bond, resulting in much low lattice thermal conductivity of 0.49 W −1 K −1 of Zn 4 Sb 2.96 In 0.04 . - Graphical abstract: The indium impurity substitutes one of Sb atoms in Sb–Sb dimer, resulting the charge transfer from In to Sb, which leads to the binding energy of Sb 3d core level XPS spectra shift to low value. Highlights: ► The indium impurity preferentially substitutes one of Sb atoms in Sb–Sb dimer at the 12c Sb(2) site. ► The occupancy of Zn increases by the In substitution for Sb, whereas that of Sb keeps constant. ► The binding energy of Sb 3d shifts to low value. ► The charge transfer occurs from In and Zn to Sb.

  14. High Eu 4f low-energy oscillator strength in the isostructural rare-earth Zintl compounds EuIn2X2 (X = P,As)

    KAUST Repository

    Singh, Nirpendra

    2012-04-11

    The isostructral Zintl compounds EuIn2X2 (X = P,As) are investigated within density functional theory. We employ the local spin density approximation with onsite interaction (LSDA + U) for varying U from 0 eV to 7 eV to model the Coulomb repulsion of the Eu 4f electrons. The LSDA + U optical conductivity disagrees with the experimental spectrum, while the simple LSDA is successful. Contrary to the expectation, it is found that EuIn2X2 (X = P,As) has a large oscillator strength for the f → d transitions in the low-energy range (below 1.5 eV) in which effects of the joint density of states play a key role. The materials show a sizeable magneto-optical Kerr effect.

  15. High Eu 4f low-energy oscillator strength in the isostructural rare-earth Zintl compounds EuIn2X2 (X = P,As)

    KAUST Repository

    Singh, Nirpendra; Schwingenschlö gl, Udo

    2012-01-01

    The isostructral Zintl compounds EuIn2X2 (X = P,As) are investigated within density functional theory. We employ the local spin density approximation with onsite interaction (LSDA + U) for varying U from 0 eV to 7 eV to model the Coulomb repulsion of the Eu 4f electrons. The LSDA + U optical conductivity disagrees with the experimental spectrum, while the simple LSDA is successful. Contrary to the expectation, it is found that EuIn2X2 (X = P,As) has a large oscillator strength for the f → d transitions in the low-energy range (below 1.5 eV) in which effects of the joint density of states play a key role. The materials show a sizeable magneto-optical Kerr effect.

  16. Chemical Substitution-Induced and Competitive Formation of 6H and 3C Perovskite Structures in Ba3-xSrxZnSb2O9: The Coexistence of Two Perovskites in 0.3 ≤ x ≤ 1.0.

    Science.gov (United States)

    Li, Jing; Jiang, Pengfei; Gao, Wenliang; Cong, Rihong; Yang, Tao

    2017-11-20

    6H and 3C perovskites are important prototype structures in materials science. We systemically studied the structural evolution induced by the Sr 2+ -to-Ba 2+ substitution to the parent 6H perovskite Ba 3 ZnSb 2 O 9 . The 6H perovskite is only stable in the narrow range of x ≤ 0.2, which attributes to the impressibility of [Sb 2 O 9 ]. The preference of 90° Sb-O-Sb connection and the strong Sb 5+ -Sb 5+ electrostatic repulsion in [Sb 2 O 9 ] are competitive factors to stabilize or destabilize the 6H structure when chemical pressure was introduced by Sr 2+ incorporation. Therefore, in the following, a wide two-phase region containing 1:2 ordered 6H-Ba 2.8 Sr 0.2 ZnSb 2 O 9 and rock-salt ordered 3C-Ba 2 SrZnSb 2 O 9 was observed (0.3 ≤ x ≤ 1.0). In the final, the successive symmetry descending was established from cubic (Fm3̅m, 1.3 ≤ x ≤ 1.8) to tetragonal (I4/m, 2.0 ≤ x ≤ 2.4), and finally to monoclinic (I2/m, 2.6 ≤ x ≤ 3.0). Here we proved that the electronic configurations of B-site cations, with either empty, partially, or fully filled d-shell, would also affect the structure stabilization, through the orientation preference of the B-O covalent bonding. Our investigation gives a deeper understanding of the factors to the competitive formation of perovskite structures, facilitating the fine manipulation on their physical properties.

  17. Phytoremediation of Sb, As, Cu, and Zn from contaminated water by the aquatic macrophyte eleocharis acicularis

    Energy Technology Data Exchange (ETDEWEB)

    Sakakibara, Masayuki [Graduate School of Science and Engineering, Ehime University, Ehime (Japan); Sano, Sakae [Faculty of Education, Ehime University, Ehime (Japan); Ha, Nguyen Thi Hoang

    2009-09-15

    Sb, As, Cu, and Zn toxicity and contamination have become a growing concern in recent years. Phytoremediation, a plant based and cost effective technology, may be an effective approach in the cleanup of water contaminated by these metals. In this study, the aquatic macrophyte Eleocharis acicularis was used in laboratory and field experiments to assess its capability to accumulate Sb, As, Cu, and Zn, and thereby investigate its potential application in phytoremediation. The results showed that E. acicularis adapted well to water contaminated by these metals. The removal rates of Sb, As, Cu, and Zn in the laboratory experiment were 3.04, 2.75, 0.417, and 1.49 {mu}g/L/day, respectively. The highest concentrations of these metals accumulated in E. acicularis after 10 days of the laboratory experiment were 6.29, 6.44, 20.5, and 73.5 mg/kg dry weight, respectively. Only 8% of As, 12% of Sb, 87% of Cu and 93% of Zn removed from the water were used by E. acicularis. The highest concentrations of Sb, As, Cu, and Zn accumulated in E. acicularis after 10 wk of the field experiment were 76.0, 22.4, 33.9, and 266 mg/kg dry weight, respectively. The results indicate that E. acicularis has the ability to accumulate Sb, As, Cu, and Zn from contaminated water. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  18. High temperature neutron powder diffraction study of the Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} phases

    Energy Technology Data Exchange (ETDEWEB)

    Lemoine, Pierric, E-mail: pierric.lemoine@univ-rennes1.fr [Institut des Sciences Chimiques de Rennes, UMR-CNRS 6226, 263 Avenue du Général Leclerc, CS 74205, 35042 Rennes Cedex (France); Bourgès, Cédric; Barbier, Tristan [Laboratoire CRISMAT, UMR-CNRS 6508, ENSICAEN, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex 04 (France); Nassif, Vivian [CNRS Institut NEEL, F-38000 Grenoble (France); Université de Grenoble Alpes, Institut NEEL, F-38000 Grenoble (France); Cordier, Stéphane [Institut des Sciences Chimiques de Rennes, UMR-CNRS 6226, 263 Avenue du Général Leclerc, CS 74205, 35042 Rennes Cedex (France); Guilmeau, Emmanuel [Laboratoire CRISMAT, UMR-CNRS 6508, ENSICAEN, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex 04 (France)

    2017-03-15

    Ternary copper-containing sulfides Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} have attracted considerable interest since few years due to their high-efficiency conversion as absorbers for solar energy and promising thermoelectric materials. We report therein on the decomposition study of Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} phases using high temperature in situ neutron powder diffraction. Our results obtained at a heating rate of 2.5 K/min indicate that: (i) Cu{sub 12}Sb{sub 4}S{sub 13} decomposes above ≈792 K into Cu{sub 3}SbS{sub 3}, and (ii) Cu{sub 4}Sn{sub 7}S{sub 16} decomposes above ≈891 K into Sn{sub 2}S{sub 3} and a copper-rich sulfide phase of sphalerite ZnS-type structure with an assumed Cu{sub 3}SnS{sub 4} stoichiometry. Both phase decompositions are associated to a sulfur volatilization. While the results on Cu{sub 12}Sb{sub 4}S{sub 13} are in fair agreement with recent published data, the decomposition behavior of Cu{sub 4}Sn{sub 7}S{sub 16} differs from other studies in terms of decomposition temperature, thermal stability and products of reaction. Finally, the crystal structure refinements from neutron powder diffraction data are reported and discussed for the Cu{sub 4}Sn{sub 7}S{sub 16} and tetrahedrite Cu{sub 12}Sb{sub 4}S{sub 13} phases at 300 K, and for the high temperature form of skinnerite Cu{sub 3}SbS{sub 3} at 843 K. - Graphical abstract: In situ neutron powder diffraction data (heating rate of 2.5 K/min) indicates that (i) the ternary Cu{sub 12}Sb{sub 4}S{sub 13} phase is stable up to 792 K and decomposes at higher temperature into Cu{sub 3}SbS{sub 3} and Cu{sub 1.5}Sb{sub 0.5}S{sub 2}, and (ii) the Cu{sub 4}Sn{sub 7}S{sub 16} phase is stable up to 891 K and decomposes at higher temperature into Sn{sub 2}S{sub 3} and a cubic phase of sphalerite ZnS-type structure. Sulfur volatilization likely occurs in order to balance the overall stoichiometry.

  19. Study of interatomic potential and thermal structural properties of β-Zn4Sb3

    International Nuclear Information System (INIS)

    Li, Guodong; Li, Yao; Liu, Lisheng; Zhang, Qingjie; Zhai, Pengcheng

    2012-01-01

    Highlights: ► The multi-body interatomic potentials of various models of β-Zn 4 Sb 3 have been developed to describe atomic interactions. ► The radial distribution function shows that the 10% vacancy of Zn site leads to the disorder of β-Zn 4 Sb 3 . ► The 10% vacancy of Zn site is the main cause of the exceptional low thermal conductivity. -- Abstract: Previous experimental research shows that the disordered Zn atoms in β-Zn 4 Sb 3 may have an important influence on its exceptionally low thermal conductivity and easily occurred phase transition. So the present work aims to study the influence of disordered Zn atoms on thermodynamics properties of β-Zn 4 Sb 3 by using molecular dynamics (MD) method. Firstly, based on first principles calculation and experimental results, the interatomic potentials of β-Zn 4 Sb 3 and MD analysis method are established, and the feasibility is verified. Then, the influence of disordered Zn atoms on thermal conductivity of β-Zn 4 Sb 3 is studied in detail. The simulation results indicate that the 10% vacant Zn atoms is the main reason for the exceptionally low thermal conductivity of β-Zn 4 Sb 3 , and it seems that the interstitial Zn atoms have little effect on its thermal conductivity.

  20. Hydrides of Alkaline Earth–Tetrel (AeTt) Zintl Phases: Covalent Tt–H Bonds from Silicon to Tin

    Energy Technology Data Exchange (ETDEWEB)

    Auer, Henry; Guehne, Robin; Bertmer, Marko; Weber, Sebastian; Wenderoth, Patrick; Hansen, Thomas Christian; Haase, Jürgen; Kohlmann, Holger (Leipzig); (Saarland-MED); (ILL)

    2017-01-18

    Zintl phases form hydrides either by incorporating hydride anions (interstitial hydrides) or by covalent bonding of H to the polyanion (polyanionic hydrides), which yields a variety of different compositions and bonding situations. Hydrides (deuterides) of SrGe, BaSi, and BaSn were prepared by hydrogenation (deuteration) of the CrB-type Zintl phases AeTt and characterized by laboratory X-ray, synchrotron, and neutron diffraction, NMR spectroscopy, and quantum-chemical calculations. SrGeD4/3–x and BaSnD4/3–x show condensed boatlike six-membered rings of Tt atoms, formed by joining three of the zigzag chains contained in the Zintl phase. These new polyanionic motifs are terminated by covalently bound H atoms with d(Ge–D) = 1.521(9) Å and d(Sn–D) = 1.858(8) Å. Additional hydride anions are located in Ae4 tetrahedra; thus, the features of both interstitial hydrides and polyanionic hydrides are represented. BaSiD2–x retains the zigzag Si chain as in the parent Zintl phase, but in the hydride (deuteride), it is terminated by H (D) atoms, thus forming a linear (SiD) chain with d(Si–D) = 1.641(5) Å.

  1. Study of 5f electron based filled skutterudite compound EuFe{sub 4}Sb{sub 12}, a thermoelectric (TE) material: FP-LAPW method

    Energy Technology Data Exchange (ETDEWEB)

    Shankar, A., E-mail: amitshan2009@gmail.com [Department of Physics, Mizoram University, Aizawl 796004 (India); Rai, D.P., E-mail: dibyaprakashrai@gmail.com [Beijing Computational Science Research Center, 3 Heqing Road, Beijing 100084 (China); Khenata, R. [Laboratoire de Physique Quantique et de Modlisation Mathmatique (LPQ3M), Dpartement de Technologie, Universit de Mascara, 29000 Mascara (Algeria); Maibam, J. [Department of Physics, Assam University, Silchar 788011 (India); Sandeep, E-mail: sndp.chettri@gmail.com [Department of Physics, Mizoram University, Aizawl 796004 (India); Thapa, R.K., E-mail: r.k.thapa@gmail.com [Department of Physics, Mizoram University, Aizawl 796004 (India)

    2015-01-15

    Highlights: • The compound EuFe{sub 4}Sb{sub 12} shows a semi-metallic behavior with pseudo gap. • The inherent dense band near E{sub F} facilitate the charge carriers. • The magnetic moment within LSDA and mBJ are underestimated. • The inclusion of onsite Coulomb repulsion (U) in LSDA has improved the result. • The results obtained from LSDA + U are consistent with the experimental data. - Abstract: We have studied the elastic, electronic and magnetic properties along with the thermoelectric properties of an undoped filled skutterudite EuFe{sub 4}Sb{sub 12} using full-potential linearized augmented plane wave (FP-LAPW) method. The LSDA, LSDA + U and a new exchange-correlation functional called modified Becke Johnson (mBJ) potential based on density functional theory (DFT) were used for studying material properties. The Eu-f and Fe-d are strongly correlated elements thus the inclusion of Coulomb repulsion (U) expected to give an exact ground state properties. The exchange-splitting of Eu-4f states were analyzed to explain the ferromagnetic behavior of EuFe{sub 4}Sb{sub 12} (half-metallic behavior). The numerical values of isotropic elastic parameters and related properties are estimated in the framework of the Voigt–Reuss–Hill approximation. The calculation of thermal transport properties at various temperature shows the high value of Seebeck coefficient and figure of merit (ZT) = 0.25 at room temperature in consistent to the experimental results.

  2. Solid Liquid Interdiffusion Bonding of Zn4Sb3 Thermoelectric Material with Cu Electrode

    Science.gov (United States)

    Lin, Y. C.; Lee, K. T.; Hwang, J. D.; Chu, H. S.; Hsu, C. C.; Chen, S. C.; Chuang, T. H.

    2016-10-01

    The ZnSb intermetallic compound may have thermoelectric applications because it is low in cost and environmentally friendly. In this study, a Zn4Sb3 thermoelectric element coated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode using a Ag/Sn/Ag solid-liquid interdiffusion bonding process. The results indicated that a Ni5Zn21 intermetallic phase formed easily at the Zn4Sb3/Ni interface, leading to sound adhesion. In addition, Sn film was found to react completely with the Ag layer to form a Ag3Sn intermetallic layer having a melting point of 480°C. The resulting Zn4Sb3 thermoelectric module can be applied at the optimized operation temperature (400°C) of Zn4Sb3 material as a thermoelectric element. The bonding strengths ranged from 14.9 MPa to 25.0 MPa, and shear tests revealed that the Zn4Sb3/Cu-joints fractured through the interior of the thermoelectric elements.

  3. DWPF SB6 Initial CPC Flowsheet Testing SB6-1 TO SB6-4L Tests Of SB6-A And SB6-B Simulants

    International Nuclear Information System (INIS)

    Lambert, D.; Pickenheim, B.; Best, D.

    2009-01-01

    The Defense Waste Processing Facility (DWPF) will transition from Sludge Batch 5 (SB5) processing to Sludge Batch 6 (SB6) processing in late fiscal year 2010. Tests were conducted using non-radioactive simulants of the expected SB6 composition to determine the impact of varying the acid stoichiometry during the Sludge Receipt and Adjustment Tank (SRAT) and Slurry Mix Evaporator (SME) processes. The work was conducted to meet the Technical Task Request (TTR) HLW/DWPF/TTR-2008-0043, Rev.0 and followed the guidelines of a Task Technical and Quality Assurance Plan (TT and QAP). The flowsheet studies are performed to evaluate the potential chemical processing issues, hydrogen generation rates, and process slurry rheological properties as a function of acid stoichiometry. These studies were conducted with the estimated SB6 composition at the time of the study. This composition assumed a blend of 101,085 kg of Tank 4 insoluble solids and 179,000 kg of Tank 12 insoluble solids. The current plans are to subject Tank 12 sludge to aluminum dissolution. Liquid Waste Operations assumed that 75% of the aluminum would be dissolved during this process. After dissolution and blending of Tank 4 sludge slurry, plans included washing the contents of Tank 51 to ∼1M Na. After the completion of washing, the plan assumes that 40 inches on Tank 40 slurry would remain for blending with the qualified SB6 material. There are several parameters that are noteworthy concerning SB6 sludge: (1) This is the second batch DWPF will be processing that contains sludge that has had a significant fraction of aluminum removed through aluminum dissolution; (2) The sludge is high in mercury, but the projected concentration is lower than SB5; (3) The sludge is high in noble metals, but the projected concentrations are lower than SB5; and(4) The sludge is high in U and Pu - components that are not added in sludge simulants. Six DWPF process simulations were completed in 4-L laboratory-scale equipment using

  4. Thermoelectric properties of ZnSb films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Venkatasubramanian, R; Watko, E; Colpitts, T

    1997-07-01

    The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.

  5. Geology, S-Pb isotopes, and 40Ar/39Ar geochronology of the Zhaxikang Sb-Pb-Zn-Ag deposit in Southern Tibet: implications for multiple mineralization events at Zhaxikang

    Science.gov (United States)

    Sun, Xiang; Zheng, Youye; Pirajno, Franco; McCuaig, T. Campbell; Yu, Miao; Xia, Shenlan; Song, Qingjie; Chang, Huifang

    2018-03-01

    Several Au, Sb, Sb-Au, Pb-Zn, and Sb-Pb-Zn-Ag deposits are present throughout the North Himalaya in southern Tibet, China. The largest Sb-Pb-Zn-Ag deposit is Zhaxikang (18 Mt at 0.6 wt% Sb, 2.0 wt% Pb, 3.5 wt% Zn, and 78 g/t Ag). Zhaxikang veins are hosted within N-S trending faults, which crosscut the Early-Middle Jurassic Ridang Formation consisting of shale interbedded with sandstone and limestone deposited on a passive continental margin. Ore paragenesis indicates that Zhaxikang mineralization occurred in two main phases composed of six total stages. The initial phase was characterized by assemblages of fine-grained Mn-Fe carbonate + arsenopyrite + pyrite + sphalerite (stage 1), followed by relatively coarse-grained Mn-Fe carbonate + Fe-rich sphalerite + galena + pyrite (stage 2). The second phase was marked by assemblages of quartz + pyrite + Fe-poor sphalerite and Ag-rich galena + tetrahedrite + sericite (stage 3), quartz + Sb-Pb sulfosalt minerals mainly composed of boulangerite and jamesonite (stage 4), quartz + stibnite ± cinnabar (stage 5), and quartz ± calcite (stage 6). Sulfides of stage 2 have δ34SV-CDT of 8.4-12.0‰, 206Pb/204Pb ratios of 19.648 to 19.659, 207Pb/204Pb ratios of 15.788 to 15.812, and 208Pb/204Pb ratios of 40.035 to 40.153. Sulfides of stage 3 have similar δ34SV-CDT of 6.1-11.2‰ and relatively more radiogenic lead isotopes (206Pb/204Pb = 19.683-19.792). Stage 4 Sb-Pb sulfosalt minerals have δ34SV-CDT of 5.0-7.2‰ and even more radiogenic lead (206Pb/204Pb = 19.811-19.981). By contrast, stibnite of stage 5 has δ34SV-CDT of 4.5-7.8‰ and less radiogenic lead (206Pb/204Pb = 18.880-18.974). Taken together with the geological observations that the Pb-Zn-bearing Mn-Fe carbonate veins were crosscut by various types of quartz veins, sphalerite and galena of stage 2 underwent dissolution and remobilization, and that Sb-Pb(-Fe) sulfosalts formed at the expense of Pb from stage 2 galena and of Fe from stage 2 sphalerite, we argue that

  6. Role of the dimensionality of the [GaX]2 network in the Zintl phases EuGa2X2

    KAUST Repository

    Singh, Nirpendra; Pöttgen, Rainer; Schwingenschlö gl, Udo

    2012-01-01

    The structural, electronic, magnetic, optical, and thermoelectric properties of EuGa2X2 (X = P, As, and Sb) are investigated using first principles calculations (taking into account the onsite Coulomb interaction) and the semi

  7. Synthesis and photoluminescence properties of Ba2CaZn2Si6O17:Eu3+ red phosphors for white LED applications

    International Nuclear Information System (INIS)

    Annadurai, G.; Kennedy, S. Masilla Moses

    2016-01-01

    Novel pellyite type Ba 2 CaZn 2 Si 6 O 17 :Eu 3+ red emitting phosphors with different Eu 3+ contents were synthesized by the solid state reaction method. The crystal structure, photoluminescence properties and concentration quenching of Ba 2 CaZn 2 Si 6 O 17 :Eu 3+ phosphors were investigated. Powder X-ray diffraction measurements confirmed the structure of the samples. The photoluminescence emission (PL) and excitation (PLE) spectra were measured. The results showed that the dominant hypersensitive red emission peak of the phosphors Ba 2 CaZn 2 Si 6 O 17 :Eu 3+ was located at 613 nm attributed to the Eu 3+ transition ( 5 D 0 → 7 F 2 ) which could be effectively excited by 395 nm (near-UV). The latter band matched well with the emission from the near-UV LED chips. The intensity ratio of 5 D 0 → 7 F 2 to 5 D 0 → 7 F 1 transition showed slight variation with Eu 3+ concentrations. The Eu 3+ emission intensity was maximum for 9 mol%. The luminescence quantum efficiency was determined and also the decay profiles were obtained and analyzed. In addition, the Commission International del'Eclairage (CIE) chromaticity coordinates of Ba 2 CaZn 2 Si 6 O 17 :0.09Eu 3+ phosphor were calculated to be 0.637 and 0.362. The experimental results demonstrated that the Ba 2 CaZn 2 Si 6 O 17 :Eu 3+ red emitting phosphor is a potential candidate for white light emitting diodes (WLEDs) pumped by near-UV chip. - Highlights: • A novel Ba 2 CaZn 2 Si 6 O 17 :Eu 3+ red phosphor was synthesized. • The samples yielded a dominant PL emission of Eu 3+ at 613 nm. • Eu 3+ concentration was optimized to be 9 mol% in Ba 2 CaZn 2 Si 6 O 17. • CIE chromaticity coordinates were estimated from the emission spectrum.

  8. First-principles study of amorphous Ga4Sb6Te3 phase-change alloys

    Science.gov (United States)

    Bouzid, Assil; Gabardi, Silvia; Massobrio, Carlo; Boero, Mauro; Bernasconi, Marco

    2015-05-01

    First-principles molecular dynamics simulations within the density functional theory framework were performed to generate amorphous models of the Ga4Sb6Te3 phase change alloy by quenching from the melt. We find that Ga-Sb and Ga-Te are the most abundant bonds with only a minor amount of Sb-Te bonds participating to the alloy network. Ga and four-coordinated Sb atoms present a tetrahedral-like geometry, whereas three-coordinated Sb atoms are in a pyramidal configuration. The tetrahedral-like geometries are similar to those of the crystalline phase of the two binary compounds GaTe and GaSb. A sizable fraction of Sb-Sb bonds is also present, indicating a partial nanoscale segregation of Sb. Despite the fact that the composition Ga4Sb6Te3 lies on the pseudobinary Ga Sb -Sb2Te3 tie line, the amorphous network can be seen as a mixture of the two binary compounds GaTe and GaSb with intertwined elemental Sb.

  9. Multistage hydrothermal silicification and Fe-Tl-As-Sb-Ge-REE enrichment in the Red Dog Zn-Pb-Ag district, northern Alaska: Geochemistry, origin, and exploration applications

    Science.gov (United States)

    Slack, J.F.; Kelley, K.D.; Anderson, V.M.; Clark, J.L.; Ayuso, R.A.

    2004-01-01

    Geochemical analyses of major, trace, and rare earth elements (REE) in more than 200 samples of variably silicified and altered wall rocks, massive and banded sulfide, silica rock, and sulfide-rich and unmineralized barite were obtained from the Main, Aqqaluk, and Anarraaq deposits in the Red Dog Zn-Pb-Ag district of northern Alaska. Detailed lithogeochemical profiles for two drill cores at Aqqaluk display an antithetic relationship between SiO2/Al2O3 and TiO2/Zr which, together with textural information, suggest preferential silicification of carbonate-bearing sediments. Data for both drill cores also show generally high Tl, Sb, As, and Ge and uniformly positive Eu anomalies (Eu/Eu* > 1.0). Similar high Tl, Sb, As, Ge, and Eu/Eu* values are present in the footwall and shallow hanging wall of Zn-Pb-Ag sulfide intervals at Anarraaq but are not as widely dispersed. Net chemical changes for altered wall rocks in the district, on the basis of average Al-normalized data relative to unaltered black shales of the host Kuna Formation, include large enrichments (>50%) of Fe, Ba, Eu, V, S, Co, Zn, Pb, Tl, As, Sb, and Ge at both Red Dog and Anarraaq, Si at Red Dog, and Sr, U, and Se at Anarraaq. Large depletions (>50%) are evident for Ca at both Red Dog and Anarraaq, for Mg, P, and Y at Red Dog, and for Na at Anarraaq. At both Red Dog and Anarraaq, wall-rock alteration removed calcite and minor dolomite during hydrothermal decarbonation reactions and introduced Si, Eu, and Ge during silicification. Sulfidation reactions deposited Fe, S, Co, Zn, Pb, Tl, As, and Sb; barite mineralization introduced Ba, S, and Sr. Light REE and U were mobilized locally. This alteration and mineralization occurred during Mississippi an hydrothermal events that predated the Middle Jurassic-Cretaceous Brookian orogeny. Early hydrothermal silicification at Red Dog took place prior to or during massive sulfide mineralization, on the basis of the dominantly planar nature of Zn-Pb veins, which suggests

  10. Effect of tungsten on the phase-change properties of Ge8Sb2Te11 thin films for the phase-change device

    Science.gov (United States)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

    2017-07-01

    In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge8Sb2Te11 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge8Sb2Te11 and W-doped Ge8Sb2Te11 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si ( p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the 0 - 400 ° C temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer's Law equation, the optical-energy band gap ( E op ), slope B 1/2, and slope 1/ F were calculated. For the crystalline materials, an increase in the slope B 1/2 and 1/ F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge8Sb2Te11 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature ( T c ). An increase in the T c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance ( R s ) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

  11. Lead-free soldering: Investigation of the Cu-Sn-Sb system along the Sn:Sb = 1:1 isopleth

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Y. [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China); Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy); Borzone, G., E-mail: borzone@chimica.unige.it [Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy); Zanicchi, G.; Delsante, S. [Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy)

    2011-02-03

    Research highlights: > In the electronics industry, the solder alloys commonly used for assembly belong to the Sn-Pb system. Fulfilment of the EU RoHS (reduction of hazardous substances) requires the development of new lead-free alloys for applications in electronics, with the same or possibly better characteristics than the traditional Sn-Pb alloys. > This research concerns the investigation of the constitutional properties of the Cu-Sn-Sb system which is considered as lead-free replacement for high-temperature applications. - Abstract: The Cu-Sn-Sb system has been experimentally investigated by a combination of optical microscopy, differential scanning calorimetry (DSC) and electron probe microanalysis (EPMA). DSC was used to identify a total number of five invariant ternary reactions and the Sn:Sb = 1:1 isopleth section up to 65 at.% Cu was constructed by combining the DSC data with the EPMA analyses of annealed alloys and literature information. The composition limits of the binary phases were detected.

  12. Synthesis, crystal structure, and magnetic properties of novel 2D kagome materials RE{sub 3}Sb{sub 3}Mg{sub 2}O{sub 14} (RE = La, Pr, Sm, Eu, Tb, Ho): Comparison to RE{sub 3}Sb{sub 3}Zn{sub 2}O{sub 14} family

    Energy Technology Data Exchange (ETDEWEB)

    Sanders, M.B.; Baroudi, K.M.; Krizan, J.W.; Mukadam, O.A.; Cava, R.J. [Department of Chemistry, Princeton University, Princeton, NJ (United States)

    2016-10-15

    The crystal structures and magnetic properties of RE{sub 3}Sb{sub 3}Mg{sub 2}O{sub 14} (RE = La, Pr, Sm, Eu, Tb, Ho) with a perfect kagome lattice are presented and compared to RE{sub 3}Sb{sub 3}Zn{sub 2}O{sub 14}. Rietveld structure refinements were performed using X-ray diffraction data, indicating that the layered compounds are fully structurally ordered. The compounds crystallize in a rhombohedral supercell of the cubic pyrochlore structure, in the space group R-3m. Magnetic susceptibility measurements show no signs of magnetic ordering above 2 K. The RE{sub 3}Sb{sub 3}Mg{sub 2}O{sub 14} family is similar to that of RE{sub 3}Sb{sub 3}Zn{sub 2}O{sub 14}; however, the series reported here features a fully ordered distribution of cations in both the nonmagnetic antimony and magnetic rare earth kagome lattices. Unlike the offsite disorder that Zn{sup 2+} experiences in RE{sub 3}Sb{sub 3}Zn{sub 2}O{sub 14}, the magnesium sites in RE{sub 3}Sb{sub 3}Mg{sub 2}O{sub 14} are completely ordered. Here we compare the magnetic properties in both series of kagome compounds to determine how significant Zn{sup 2+}'s positional ordering is within this structure type. The compounds reported here appear to be relatively defect-free and are therefore model systems for investigating magnetic frustration on an ideal 2D rare earth kagome lattice. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Synthesis, characterization and photocatalysis enhancement of Eu2O3-ZnO mixed oxide nanoparticles

    Science.gov (United States)

    Mohamed, W. S.; Abu-Dief, Ahmed M.

    2018-05-01

    Pure ZnO nanoparticles (NPs) and mixed Eu2O3 and ZnO NPs with different Eu2O3 ratios (5%, 10%, and 15%) were synthesized by a precipitation method under optimum conditions. The synthesized samples were characterized by means of X-ray diffraction, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy, transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy, Raman spectroscopy, and UV-vis diffuse reflectance spectroscopy. The as-synthesized ZnO NPs exhibit high phase purity and a highly crystalline wurtzite ZnO structure. The mixed Eu2O3 and ZnO NPs exhibit a Eu2O3 zinc blend phase in addition to the wurtzite phase of pure ZnO, confirming the high purity and good crystallinity of the as-synthesized samples. The high-purity formation of ZnO and Eu2O3 phases was confirmed by FTIR and Raman spectra. Microstructural analysis by SEM and TEM confirmed the sphere-like morphology with different particle sizes (29-40 nm) of the as-synthesized samples. The photocatalytic activities of pure ZnO NPs and mixed Eu2O3 and ZnO NPs for the degradation of methylene blue were evaluated under ultraviolet (UV) irradiation. The results show that Eu2O3 plays an important role in the enhancement of the photocatalytic properties of ZnO NPs. We found that mixed 5% Eu2O3 and ZnO NPs exhibit the highest photocatalytic activity (degradation efficiency of 96.5% after 180 min of UV irradiation) as compared with pure ZnO NPs (degradation efficiency of 80.3% after 180 min of UV irradiation). The increased photocatalytic activity of the optimum mixed Eu2O3 and ZnO NPs is due to the high crystallinity, high surface area with small particle size, and narrow energy gap.

  14. Sb-related defects in Sb-doped ZnO thin film grown by pulsed laser deposition

    Science.gov (United States)

    Luo, Caiqin; Ho, Lok-Ping; Azad, Fahad; Anwand, Wolfgang; Butterling, Maik; Wagner, Andreas; Kuznetsov, Andrej; Zhu, Hai; Su, Shichen; Ling, Francis Chi-Chung

    2018-04-01

    Sb-doped ZnO films were fabricated on c-plane sapphire using the pulsed laser deposition method and characterized by Hall effect measurement, X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and positron annihilation spectroscopy. Systematic studies on the growth conditions with different Sb composition, oxygen pressure, and post-growth annealing were conducted. If the Sb doping concentration is lower than the threshold ˜8 × 1020 cm-3, the as-grown films grown with an appropriate oxygen pressure could be n˜4 × 1020 cm-3. The shallow donor was attributed to the SbZn related defect. Annealing these samples led to the formation of the SbZn-2VZn shallow acceptor which subsequently compensated for the free carrier. For samples with Sb concentration exceeding the threshold, the yielded as-grown samples were highly resistive. X-ray diffraction results showed that the Sb dopant occupied the O site rather than the Zn site as the Sb doping exceeded the threshold, whereas the SbO related deep acceptor was responsible for the high resistivity of the samples.

  15. Effect of tungsten on the phase-change properties of Ge_8Sb_2Te_1_1 Thin Films for the Phase-change device

    International Nuclear Information System (INIS)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

    2017-01-01

    In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge_8Sb_2Te_1_1 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge_8Sb_2Te_1_1 and W-doped Ge_8Sb_2Te_1_1 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si (p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the ∼ 0 - 400 ℃ temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer’s Law equation, the optical-energy band gap (E_o_p), slope B"1"/"2, and slope 1/F were calculated. For the crystalline materials, an increase in the slope B"1"/"2 and 1/F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge_8Sb_2Te_1_1 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature (T_c). An increase in the T_c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance (R_s) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

  16. Correlação entre dados estruturais e bandas de vibração no infravermelho para a fase espinélio Zn7-xNi xSb2O12 Correlation between structural data and infraved vibrational bands of the Zn7-xNi xSb2O12 spinel phase

    Directory of Open Access Journals (Sweden)

    L. Gama

    2000-12-01

    Full Text Available A fase espinélio Zn7-xNi xSb2O12 tem apresentado propriedades magnéticas importantes, comportando-se como spin-glass. Desde que estas propriedades são fortemente dependentes da configuração precisa dos átomos nesta estrutura, foram utilizados neste trabalho, com o intuito de clarificar essa configuração, a espectroscopia de infravermelho, aliada ao refinamento de estruturas pelo método de Rietveld. O espectro de infravermelho mostra nas condições de contorno estudadas a presença de três das quatro bandas ativas comuns aos espinélios. Conforme resultados do refinamento pelo método de Rietveld, o níquel substitui o zinco primeiramente no sítio octaédrico e, em altas concentrações (x > ou = 3, migra para o sítio tetraédrico. Essa migração é indicada pelo "splitting", em torno de 520 cm-1, para (x > ou = 3, apresentado no espectro de infravermelho quando a banda n2 é afetada pela mudança do cátion bivalente.The Zn7-xNi xSb2O12 spinel phase shows important magnetic properties with a spin-glass behavior. As these properties are strongly dependent on the atomic configuration in the spinel structure, infrared spectroscopy and the structure refining by the Rietveld analysis have been studied. The infrared spectrum presents three to four of the common spinel active modes. The Rietveld analysis shows that Ni firstly substitutes for Zn in the octahedral site and, for large (x > or = 3 concentrations, migrates to the tetrahedral site. The indication of that migration is the splitting at approximately 520 cm-1, shown in the infrared spectrum when the nu 2 band is modified by the substitution of the divalent cation.

  17. Thermoelectric properties of ZnSb films grown by MOCVD

    International Nuclear Information System (INIS)

    Venkatasubramanian, R.; Watko, E.; Colpitts, T.

    1997-04-01

    The thermoelectric properties of metallorganic chemical vapor deposited (MOCVD) ZnSb films are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the growth of thicker ZnSb films lead to improved carrier mobilities and lower free-carrier concentrations. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 to 170 C, with peak Seebeck coefficients as high as 470 microV/K at 220 C. The various growth conditions, including the use of intentional dopants, to improve the Seebeck coefficients at room temperature and above, are discussed. A short annealing of the ZnSb films at temperatures of ∼ 200 C resulted in reduced free-carrier levels and higher Seebeck coefficients at 300 K. Finally, ZT values based on preliminary thermal conductivity measurements using the 3-ω method are reported

  18. Amorphous-to-crystalline transition in Ge{sub 8}Sb{sub (2-x)}Bi{sub x}Te{sub 11} phase-change materials for data recording

    Energy Technology Data Exchange (ETDEWEB)

    Svoboda, Roman, E-mail: roman.svoboda@upce.cz [Department of Physical Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Karabyn, Vasyl [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Málek, Jiří [Department of Physical Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Frumar, Miloslav [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Beneš, Ludvík; Vlček, Milan [Joint Laboratory of Solid State Chemistry of Institute of Macromolecular Chemistry of the Academy of Sciences of the Czech Republic v.v.i. and the University of Pardubice 532 10 Pardubice (Czech Republic)

    2016-07-25

    Structural and thermokinetic analyses were used to study the crystallization behavior of Ge{sub 8}Sb{sub (2-x)}Bi{sub x}Te{sub 11}thin films, promising materials for phase-change memory recording applications. By exploring the full compositional range, it was found that the Sb→Bi substitution leads to a decrease of crystallization enthalpy and activation energy of the main crystallization phase-change process. These trends were explained in terms of the changing structural ordering within the recently proposed new phase-change atomic switching mechanism. All of the compositions exhibited very similar transformation kinetics, confirming the uniformity of the phase-change mechanisms involved. It was further shown that rapid energy delivery achieved during heating, in the case of all investigated materials, leads to a transition from the classical nucleation/growth-based formation of 3D crystallites towards an autocatalytic phase-change process with an enormously increased speed of crystallization. Rapidity of the crystallization process was quantified for all of the studied compositions based on a novel Index of Crystallization Rapidity criterion – the results provided by this criterion showed that the highest crystallization speed was produced by the Ge{sub 8}Sb{sub 0.8}Bi{sub 1.2}Te{sub 11} composition, which therefore from this point of view appears to be a suitable candidate for the new generation of phase-change memory recording devices. - Highlights: • Crystallization behavior of Ge{sub 8}Sb{sub (2-x)}Bi{sub x}Te{sub 11} thin films was studied by DSC. • Sb → Bi substitution leads to a decrease of crystallization enthalpy and activation energy. • All compositions exhibited very similar transformation kinetics. • Rapidity of the crystallization process was quantified for the studied compositions. • Highest crystallization speed was produced by the Ge{sub 8}Sb{sub 0.8}Bi{sub 1.2}Te{sub 11} composition.

  19. Bromine-rich Zinc Bromides: Zn6Br12(18-crown-6)2×(Br2)5, Zn4Br8(18-crown-6)2×(Br2)3, and Zn6Br12(18-crown-6)2×(Br2)2.

    Science.gov (United States)

    Hausmann, David; Feldmann, Claus

    2016-06-20

    The bromine-rich zinc bromides Zn6Br12(18-crown-6)2×(Br2)5 (1), Zn4Br8(18-crown-6)2×(Br2)3 (2), and Zn6Br12(18-crown-6)2×(Br2)2 (3) are prepared by reaction of ZnBr2, 18-crown-6, and elemental bromine in the ionic liquid [MeBu3N][N(Tf)2] (N(Tf)2 = bis(trifluoromethylsulfonyl)amide). Zn6Br12(18-crown-6)2×(Br2)5 (1) is formed instantaneously by the reaction. Even at room temperature, compound 1 releases bromine, which was confirmed by thermogravimetry (TG) and mass spectrometry (MS). The release of Br2 can also be directly followed by the color and density of the title compounds. With controlled conditions (2 weeks, 25 °C, absence of excess Br2) Zn6Br12(18-crown-6)2×(Br2)5 (1) slowly releases bromine with conconcurrent generation of Zn4Br8(18-crown-6)2×(Br2)3 (2) (in ionic liquid) and Zn6Br12(18-crown-6)2×(Br2)2 (3) (in inert oil). All bromine-rich zinc bromides contain voluminous uncharged (e.g., Zn3Br6(18-crown-6), Zn2Br4(18-crown-6)) or ionic (e.g., [Zn2Br3(18-crown-6)](+), [(Zn2Br6)×(Br2)2](2-)) building units with dibromine molecules between the Zn oligomers and partially interconnecting the Zn-containing building units. Due to the structural similarity, the bromine release is possible via crystal-to-crystal transformation with retention of the crystal shape.

  20. A Strategy for Synthesizing CaZnOS:Eu{sup 2+} Phosphor and Comparison of Optical Properties with CaS:Eu{sup 2+}

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Zhongxian; Rong, Chunying; Zhou, Wenli; Zhang, Jilin; Li, Chengzhi; Yu, Liping; Liu, Shubin; Lian, Shixun, E-mail: shixunlian@gmail.com

    2014-01-15

    Graphical abstract: Pure-phase CaZnOS:Eu{sup 2+},Ce{sup 3+}phosphor with good chemical and thermal stability can be synthesized by co-doping with Ce{sup 3+} as deoxidizer rather than reduction atmosphere. The broad bluish-green excitation and broad red emission show it is a better phosphor than CaS:Eu{sup 2+} for white LED and for sunlight harvesting of plants. -- Highlights: • Pure-phase phosphor CaZnOS:Eu{sup 2+} was synthesized by co-doping with Ce{sup 3+} as deoxidizer. • Energy transfer mechanism from Ce{sup 3+} to Eu{sup 2+} in CaZnOS host is proposed. • CaZnOS:Eu{sup 2+}, Ce{sup 3+} phosphor has good chemical and thermal stability performance. • The similarities and differences between CaZnOS:Eu{sup 2+} and CaS:Eu{sup 2+} were analyzed. • The green excitation and red emission show superior solar harvesting for plants. -- Abstract: The red-emitting phosphor CaZnOS:Eu{sup 2+} was synthesized from CaCO{sub 3}, ZnS, Eu{sub 2}O{sub 3} and CeCl{sub 3} by controlling the sintering condition. It was found that Ce{sup 3+} ions can play a role of reductant to contribute to the formation of Eu{sup 2+} in CaZnOS matrix under inert protective atmosphere. While the gas flow changed to H{sub 2}/N{sub 2}, the product turned to CaS easily. XRD, photoluminescence spectra, UV–vis and IR absorption spectra were evaluated to investigate the origin of the distinctions of the optical properties and stabilities between the two divalent europium ions doped phosphors CaZnOS:Eu{sup 2+} and CaS:Eu{sup 2+}. The similarities and differences between them were analyzed.

  1. Catalyst-free vapor-phase transport growth of vertically aligned ZnO nanorods on 6H-SiC and (11-20)Al{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Mofor, A.C.; Bakin, A.S.; Elshaer, A.; Waag, A. [Inst. of Semiconductor Technology, Technical Univ. Braunschweig (Germany); Fuhrmann, D.; Hangleiter, A. [Inst. of Applied Physics, Technical Univ. Braunschweig (Germany); Bertram, F.; Christen, J. [Dept. of Solid State Physics, Univ. of Magdeburg (Germany)

    2006-03-15

    ZnO nanostructures are expected to pave the way for many interesting applications in optoelectronics, spin electronics gas sensor technology and biomedicine. Fabrication methods, especially for nanorods have been based mostly on catalyst-assisted growth methods that employ metal-organic sources and other contaminating agents like graphite to grow ZnO nanorods at relatively high temperatures. We report on the growth of ZnO nanorods on 6H-SiC and (11-20)Al{sub 2}O{sub 3} using purely elemental sources, without catalysis and at relatively low temperatures and growth pressure in a specially designed vapor-phase transport system. ZnO nanorods with widths of 80-900 nm and lengths of 4-12 {mu}m were obtained. Nanorod concentrations of up to 10{sup 9} cm{sup -2} with homogenous luminescence and high purity were noted. (orig.)

  2. Solid state compatibility in the ZnO-rich region of ZnO-Bi2O3-Sb2O3 and ZnO-Bi2O3-Sb2O5 systems

    Directory of Open Access Journals (Sweden)

    Jardiel, T.

    2010-04-01

    Full Text Available The obtaining of ZnO-Bi2O3-Sb2O3 (ZBS based varistor thick films with high non-linear properties is constrained by the bismuth loss by vaporization that takes place during the sintering step of these ceramics, a process which is yet more critical in the thick film geometry due to its inherent high are/volume ratio. This volatilization can be controlled to a certain extent by modifying the proportions of the Bi and/or Sb precursors. Obviously this requires a clear knowledge of the different solid state compatibilities in the mentioned ZBS system. In this sense a detailed study of the thermal evolution of the ZnO-Bi2O3-Sb2O3 and ZnO-Bi2O3-Sb2O5 systems in the ZnO-rich region of interest for varistors, is presented in this contribution. A different behaviour is observed when using Sb2O3 or Sb2O5 as starting precursor, which should be attributed to the oxidation process experimented by Sb2O3 compound during the heating. On the other hand the use of high amounts of Bi in the starting formulation leads to the formation of a liquid phase at lower temperatures, which would allow the use of lower sintering temperatures.La obtención de varistors en lámina gruesa basados en ZnO-Bi2O3-Sb2O3 (ZBS y con propiedades altamente no-lineales está limitada por la perdida de bismuto por volatilización durante la sinterización de estos cerámicos, un proceso que es todavía más crítico en la geometría de lámina gruesa debido a su elevada relación área/volumen inherente. Dicha volatilización puede ser no obstante controlada hasta cierta extensión modificando las proporciones de los precursores de Bi y/o Sb. Obviamente ello conlleva un amplio conocimiento de las diferentes compatibilidades en estado sólido en el mencionado sistema ZBS. En este sentido, en la presente contribución se presenta un estudio detallado de la evolución térmica de los sistemas ZnO-Bi2O3-Sb2O3 y ZnO-Bi2O3-Sb2O5 en la región rica en ZnO de interés para varistores. Como

  3. Preparation, characterization of Sb-doped ZnO nanocrystals and their excellent solar light driven photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Nasser, Ramzi; Othmen, Walid Ben Haj [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, University of Tunis El Manar 2092 (Tunisia); Elhouichet, Habib, E-mail: habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, University of Tunis El Manar 2092 (Tunisia); Férid, Mokhtar [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia)

    2017-01-30

    Highlights: • Sb-ZnO was obtained by modified sol-gel method using citric acid as stabilizing agent. • Sb incorporated both in lattice and interstitial sites. • The formation of (Sb{sub Zn}–2 V{sub Zn}) acceptor level was revealed by photoluminescence studies. • Optimum Sb content to show higher photocatalytic activity was found to be 3%. - Abstract: In the present study, undoped and antimony (Sb) doped ZnO nanocrystals (NCs) were prepared by a simple and economical sol-gel method. X-ray diffraction (XRD) and transmission electron microscopy (TEM) revealed the purity of the obtained phase and its high crystallinity. Raman analysis confirms the hexagonal Wurtzite ZnO structure. According to the diffuse reflectance results, the band gap was found to decrease up to 3% of Sb doping (ZSb3 sample). The results of X-ray photoelectron spectroscopy (XPS) measurements reveal that Sb ions occupied both Zn and interstitials sites. The successful substitution of antimony in ZnO lattice suggests the formation of the complex (Sb{sub Zn}–2 V{sub Zn}) acceptor level above the valence band. Particularly for ZSb3 sample, the UV photoluminescence (PL) band presents an obvious red-shift attributed to the formation of this complex. Rhodamine B (RhB) was used to evaluate the photocatalytic activity of Sb-doped ZnO NCs under sunlight irradiation. It was found that oxygen vacancies play a major role in the photocatalytic process by trapping the excited electrons and inhibiting the radiative recombination. During the photocatalytic mechanism, the Sb doping, expressed through the apparition of the (Sb{sub Zn}–2 V{sub Zn}) correspondent acceptor level, enhances the sunlight absorption within the ZnO band gap, which stimulates the generation of hydroxyl radicals and promotes the photocatalytics reaction rates. Such important contribution of the hydroxyl radicals was confirmed experimentally when using ethanol as scavenger in the photocatalytic reaction. The photodegradation

  4. Gel-combustion synthesis of CoSb2O6 and its reduction to powdery Sb2Co alloy

    Directory of Open Access Journals (Sweden)

    MAJA JOVIC

    2009-01-01

    Full Text Available Sb2Co alloy in powdery form was synthesized via reduction with gaseous hydrogen of the oxide CoSb2O6, obtained by the citrate gel-combustion technique. The precursor was an aqueous solution of antimony nitrate, cobalt nitrate and citric acid. The precursor solution with mole ratio Co(II/Sb(V of 1:2 was gelatinized by evaporation of water. The gel was heated in air up to the temperature of self-ignition. The product of gel combustion was a mixture of oxides and it had to be additionally thermally treated in order to be converted to pure CoSb2O6. The reduction of CoSb2O6 by gaseous hydrogen yielded powdery Sb2Co as the sole phase. The process of oxide reduction to alloy was controlled by thermogravimetry, while X-ray diffractometry was used to control the phase compositions of both the oxides and alloys.

  5. Bonding in ZnSb

    DEFF Research Database (Denmark)

    Bjerg, Lasse; Madsen, Georg K. H.; Iversen, Bo Brummerstedt

    Thermoelectric materials are capable of converting waste heat into usable electric energy. The conversion efficiency depends critically on the electronic band structure. Theoretical calculations predict the semiconducting ZnSb to have a promising efficiency if it is n-doped. The details of the lo......Thermoelectric materials are capable of converting waste heat into usable electric energy. The conversion efficiency depends critically on the electronic band structure. Theoretical calculations predict the semiconducting ZnSb to have a promising efficiency if it is n-doped. The details...... of the lowest conduction band have therefore been investigated. Electrons placed in the lowest conduction band are predicted to increase the bonding between second nearest neighbour atoms. This causes a lowering of the energy at special points in the first Brillouin zone. Thereby, the dispersion of the lowest...

  6. Study of structural and morphological properties of thermally evaporated Sn{sub 2}Sb{sub 6}S{sub 11} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ben Mehrez, N., E-mail: najia.benmehrez@gmail.com [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Khemiri, N. [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Kanzari, M. [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Institut Préparatoire aux Etudes d’Ingénieurs de Tunis Montfleury, Université de Tunis (Tunisia)

    2016-10-01

    In this study, we report the structural and morphological properties of the new material Sn{sub 2}Sb{sub 6}S{sub 11} thin films prepared on glass substrates by vacuum thermal evaporation at various substrate temperatures (30, 60, 100, 140, 180 and 200 °C). Sn{sub 2}Sb{sub 6}S{sub 11} ingot was synthesized by the horizontal Bridgman technique. The structural properties of Sn{sub 2}Sb{sub 6}S{sub 11} powder were studied by X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman spectroscopy. The films were characterized for their structural properties by using XRD. All films were polycrystalline in nature. The variations of the structural parameters of the films with the substrate temperature were investigated. The results show that the crystallite sizes increase as the substrate temperature increases. The morphological properties of the films were analyzed by atomic force microscopy (AFM). The roughness and the topography of the surface of the films strongly depend on the substrate temperature. - Highlights: • Sn{sub 2}Sb{sub 6}S{sub 11} powder was successfully synthesized by the horizontal Bridgman technique. • Sn{sub 2}Sb{sub 6}S{sub 11} films were grown by thermal evaporation at different substrate temperatures. • Structural properties of Sn{sub 2}Sb{sub 6}S{sub 11} powder were investigated. • The effect of the substrate temperature on structural and morphological of Sn{sub 2}Sb{sub 6}S{sub 11} films properties was studied.

  7. Study on anisotropy of n-type Mg3Sb2-based thermoelectric materials

    Science.gov (United States)

    Song, Shaowei; Mao, Jun; Shuai, Jing; Zhu, Hangtian; Ren, Zhensong; Saparamadu, Udara; Tang, Zhongjia; Wang, Bo; Ren, Zhifeng

    2018-02-01

    The recent discovery of a high thermoelectric figure of merit (ZT) in an n-type Mg3Sb2-based Zintl phase triggered an intense research effort to pursue even higher ZT. Based on our previous report on Mg3.1Nb0.1Sb1.5Bi0.49Te0.01, we report here that partial texturing in the (001) plane is achieved by double hot pressing, which is further confirmed by the rocking curves of the (002) plane. The textured samples of Mg3.1Nb0.1Sb1.5Bi0.49Te0.01 show a much better average performance in the (00l) plane. Hall mobility is significantly improved to ˜105 cm2 V-1 s-1 at room temperature in the (00l) plane due to texturing, resulting in higher electrical conductivity, a higher power factor of ˜18 μW cm-1 K-2 at room temperature, and also higher average ZT. This work shows that texturing is good for higher thermoelectric performance, suggesting that single crystals of n-type Mg3Sb2-based Zintl compounds are worth pursuing.

  8. Effect of tungsten on the phase-change properties of Ge{sub 8}Sb{sub 2}Te{sub 11} Thin Films for the Phase-change device

    Energy Technology Data Exchange (ETDEWEB)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin [Chonnam National University, Gwangju (Korea, Republic of)

    2017-07-15

    In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge{sub 8}Sb{sub 2}Te{sub 11} thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge{sub 8}Sb{sub 2}Te{sub 11} and W-doped Ge{sub 8}Sb{sub 2}Te{sub 11} films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si (p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the ∼ 0 - 400 ℃ temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer’s Law equation, the optical-energy band gap (E{sub op}), slope B{sup 1/2}, and slope 1/F were calculated. For the crystalline materials, an increase in the slope B{sup 1/2} and 1/F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge{sub 8}Sb{sub 2}Te{sub 11} had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature (T{sub c}). An increase in the T{sub c} increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance (R{sub s}) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

  9. SB6.0: The 6th International meeting on Synthetic Biology, July 9-11, 2013

    Energy Technology Data Exchange (ETDEWEB)

    Kahl, Linda J. [BioBricks Foundation

    2015-04-23

    The Synthetic Biology conference series (SBx.0) is the preeminent academic meeting in synthetic biology. Organized by the BioBricks Foundation, the SBx.0 conference series brings together leading researchers, students, industry executives, and policy makers from around the world to share, consider, debate, and plan efforts to make biology easier to engineer. Historically held every two years, the SBx.0 conferences are held in alternating locations in the United States, Europe, and Asia to encourage global participation and collaboration so that the ramifications of synthetic biology research and development are most likely to be safe ethical, and beneficial. On 9-11 July 2013, the 6th installment of the synthetic biology conference series (SB6.0) was held on the campus of Imperial College London (http://sb6.biobricks.org). The SB6.0 conference was attended by over 700 people, and many more were able to participate via video digital conference (http://sb6.biobricks.org/digital-conference/). Over the course of three days, the SB6.0 conference agenda included plenary sessions, workshops, and poster presentations covering topics ranging from the infrastructure needs arising when “Systematic Engineering Meets Biological Complexity” and design-led considerations for “Connecting People and Technologies” to discussions on “Engineering Biology for New Materials,” “Assessing Risk and Managing Biocontainment,” and “New Directions for Energy and Sustainability.” The $10,150 grant awarded by the U.S. Department of Energy (DE-SC0010233) to the BioBricks Foundation was used to provide partial reimbursement for the travel expenses of leading researchers from the United States to speak at the SB6.0 conference. A total of $9,450 was used to reimburse U.S. speakers for actual expenses related to the SB6.0 conference, including airfare (economy or coach only), ground transportation, hotel, and registration fees. In addition, $700 of the grant was used to offset

  10. Long afterglow properties of Eu2+/Mn2+ doped Zn2GeO4

    International Nuclear Information System (INIS)

    Wan, Minhua; Wang, Yinhai; Wang, Xiansheng; Zhao, Hui; Li, Hailing; Wang, Cheng

    2014-01-01

    Zn 2 GeO 4 :Eu 2+ 0.01 and Zn 2 GeO 4 :Mn 2+ 0.01 long afterglow phosphors were synthesized via a high temperature solid state reaction. X-ray diffraction (XRD), afterglow spectra, decay curves and thermoluminescence curves were utilized to characterize the samples. The X-ray diffraction phases indicate that the doping of small amount of transition metal ions or rare earth ions has no significant influence on the crystal structure of Zn 2 GeO 4 . According to the afterglow spectra, we found that the Zn 2 GeO 4 :Eu 2+ 0.01 exhibits a broad band emission with a peak at 474 nm, which could be ascribed to Eu 2+ transition between 4f 6 5d 1 and 4f 7 electron configurations. The Zn 2 GeO 4 :Mn 2+ 0.01 shows a narrow band emission peaking at 532 nm corresponding to the characteristic transition of Mn 2+ ( 4 T 1 → 6 A 1 ). The thermoluminescence (TL) curves above room temperature are employed for the discussion of the origin of the traps and the mechanism of the persistent luminescence. The results indicate that Zn 2 GeO 4 may be an excellent host material for the rare earth ions or transition metal ions long afterglows. -- Highlights: • Zn 2 GeO 4 :Eu 2+ 0.01 and Zn 2 GeO 4 :Mn 2+ 0.01 long afterglow phosphors were synthesized. • Found that these phosphors possess a persistent luminescence property. • The long afterglow spectra were measured. • Found that these phosphors possess a trap level by thermoluminescence

  11. Crystal structure, chemical bond and enhanced performance of β-Zn4Sb3 compounds with interstitial indium dopant

    International Nuclear Information System (INIS)

    Tang, Dingguo; Zhao, Wenyu; Yu, Jian; Wei, Ping; Zhou, Hongyu; Zhu, Wanting; Zhang, Qingjie

    2014-01-01

    Highlights: • The interstitial In dopant leads to the local structural perturbations in β-Zn 4 Sb 3 . • The simultaneous increases in α and σ are observed in the In-doped Zn 4 Sb 3 compounds. • The In dopant plays different doping behaviors by the dopant contents in the samples. • A maximum ZT of 1.41 at 700 K is achieved for the In-doped Zn 4 Sb 3 compounds. - Abstract: In-doped β-Zn 4 Sb 3 compounds (Zn 4−x In x Sb 3 , 0 ⩽ x ⩽ 0.24) were prepared by melt-quenching and spark plasma sintering technology in the work. The resultant samples were systematically investigated by X-ray diffraction, X-ray photoelectron spectroscopy, differential scanning calorimetry and thermoelectric property measurements. The In dopant was identified to preferentially occupy the interstitial site in β-Zn 4 Sb 3 and led to the local structural perturbations near the 12c Sb2 and 36f Zn1 sites. The Auger parameters of Zn and Sb indicated that the increase in the valence of Zn was attributed to the charge transfer from Zn to In atoms. The binding energies of In 3d 5/2 core level showed that the interstitial In dopant was n-type dopant (In 3+ ) in slightly In-doped Zn 4−x In x Sb 3 , but acted as acceptor and was p-type dopant (In + ) in heavily In-doped ones. The discovery provides a reasonable explanation for the puzzled relation between σ and x for Zn 4−x In x Sb 3 . Simultaneously increasing the electrical conductivity and Seebeck coefficient of Zn 4−x In x Sb 3 can be realized through the local structural perturbations. The significantly enhanced power factor and the intrinsic low thermal conductivity resulted in a remarkable increase in the dimensionless figure of merit (ZT). The highest ZT reached 1.41 at 700 K for Zn 3.82 In 0.18 Sb 3 and increased by 68% compared with that of the undoped β-Zn 4 Sb 3

  12. Synthesis, crystal structure and characterizations of a new red phosphor K{sub 3}EuB{sub 6}O{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Dan, E-mail: iamzd1996@163.com [College of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo, Henan, 454000 (China); State Key Laboratory of Structural Chemistry, Fuzhou, Fujian, 350002 (China); Ma, Fa-Xue; Wu, Zhi-Qiang; Zhang, Lei [College of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo, Henan, 454000 (China); Wei, Wei, E-mail: wwei@cnu.edu.cn [Department of Chemistry, Capital Normal University, Beijing, 100048 (China); Yang, Juan; Zhang, Rong-Hua; Chen, Peng-Fei; Wu, Shan-Xuan [College of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo, Henan, 454000 (China)

    2016-10-01

    A new potassium europium borate K{sub 3}EuB{sub 6}O{sub 12} has been prepared using a high temperature molten salt method and structurally characterized by single crystal X-ray diffraction (SC-XRD) analyses. Its structure features a three-dimensional (3D) framework composed of isolated [B{sub 5}O{sub 10}]{sup 5−} anions that are bridged by K{sup +} and Eu{sup 3+} ions. In this structure, one crystallographic distinct atom site is mixed occupied by K/Eu at a molar ratio of 1:1. The self-activated photoluminescence (PL) of K{sub 3}EuB{sub 6}O{sub 12} was studied. The excitation spectrum covers a wide range from 322 to 466 nm, which suggests that the K{sub 3}EuB{sub 6}O{sub 12} phosphors can be effectively excited by a near-UV light source. The emission spectrum consists of groups of lines in the red spectral region due to the {sup 5}D{sub 0}→{sup 7}F{sub j} (j = 1, 2, 3, 4) electronic transitions of Eu{sup 3+} ions, with the most intense line at 611 nm. We may expect that K{sub 3}EuB{sub 6}O{sub 12} has the potential to be a red phosphor pumped by near-UV LED chips. - Highlights: • A new red phosphor K{sub 3}EuB{sub 6}O{sub 12} was prepared. • The crystal structure of K{sub 3}EuB{sub 6}O{sub 12} was determined for the first time. • The photoluminescence properties of K{sub 3}EuB{sub 6}O{sub 12} are studied. • K{sub 3}EuB{sub 6}O{sub 12} show intense self-activated red emission under near-UV light excitation.

  13. Synthesis, characterization and electrochemical behavior of Sb-doped ZnO microsphere film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qian [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); Cheng, Kui, E-mail: chengkui@zju.edu.cn [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); Weng, Wenjian, E-mail: wengwj@zju.edu.cn [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); The Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050 (China); Du, Piyi; Han, Gaorong [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China)

    2013-10-01

    Sb-doped ZnO microsphere film was fabricated by a carboxylate ion assisted hydrothermal route coupled with a post-calcination process. The structure, chemical composition and optical band gap of the Sb-doped ZnO microsphere film were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, inductively couple plasma optical emission spectroscopy and UV–visible spectrophotometry, and compared with the un-doped ZnO microsphere film. The results suggest that the formation of zinc–antimony tartrate complex species during hydrothermal growth is the key to realize Sb-doped ZnO microstructures, and the present hydrothermal method with post-calcination is an effective way to dope Sb into ZnO. Furthermore, the Sb-doped ZnO microsphere film based electrochemical biosensor exhibits a good sensing performance for the detection of hydrogen peroxide, with a sensitivity of 271 μA mM{sup −1} cm{sup −2} which is more than three times higher than that of the un-doped ZnO biosensor. - Highlights: • Sb-doped ZnO microsphere (SZM) films were grown by hydrothermal deposition. • Carboxylate ions were used to form complex during hydrothermal growth. • The formation of Zn–Sb tartrate complex is the key to realize SZM. • The biosensors based on SZM film are feasible and sensitive to detect H{sub 2}O{sub 2}. • The Sb doping could improve the electrochemical property of ZnO.

  14. A study of Eu incorporated ZnO thin films: An application of Al/ZnO:Eu/p-Si heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Turgut, G. [Department of Basic Sciences, Faculty of Science, Erzurum Technical University, Erzurum, 25240 (Turkey); Duman, S., E-mail: sduman@atauni.edu.tr [Department of Physics, Faculty of Science, Ataturk University, Erzurum, 25240 (Turkey); Sonmez, E. [Department of Physics, Faculty of K.K. Education, Ataturk University, Erzurum, 25240 (Turkey); Ozcelik, F.S. [Department of Physics, Faculty of Science, Ataturk University, Erzurum, 25240 (Turkey)

    2016-04-15

    Highlights: • Eu incorporated ZnO thin films were grown by sol–gel spin coating. • The influence of Eu contribution on features of ZnO was investigated. • Al/ZnO:Eu/p-Si heterojunction diodes were also fabricated. • The diode parameters were calculated from I–V measurements. - Abstract: In present work, the pure and europium (Eu) incorporated zinc oxide (ZnO) thin films were deposited with sol-gel spin coating by using zinc acetate dehydrate and Eu (III) chloride salts. The coated films were examined by means of XRD, AFM and UV/VIS spectrophotometer. The ZnO hexagonal wurtzite nanoparticles with (002) preferential direction were observed for all films. The values of crystallite size, micro-strain and surface roughness continuously increased from 21 nm, 1.10 × 10{sup −3} and 2.43 nm to the values of 35.56 nm, 1.98 × 10{sup −3} and 28.99 nm with Eu doping, respectively. The optical band gap value of the pure ZnO initially increased from 3.296 eV to 3.328 eV with Eu doping up to 2 at.% doping level, then it started to decrease with more Eu content. The electrical features of Al/n-ZnO:Eu/p-Si heterojunction diodes were inquired by current-voltage (I–V) measurements at the room temperature.

  15. Effect of Ce-rich rare earth on microstructure and mechanical properties of Mg-10Zn-5Al-0.1Sb magnesium alloy

    Directory of Open Access Journals (Sweden)

    You Zhiyong

    2012-05-01

    Full Text Available To improve the comprehensive mechanical properties of Mg-10Zn-5Al-0.1Sb magnesium alloy, different amount of Ce-rich rare earth (RE was added to the alloy, and the effect of RE addition on the microstructure and mechanical properties of Mg-10Zn-5Al-0.1Sb alloy was investigated by means of Brinell hardness measurement, scanning electron microscopy (SEM, energy dispersive spectroscope (EDS and X-ray diffraction (XRD. The results show that an appropriate amount of Ce-rich rare earth addition can make the Al4Ce phase particles and CeSb phase disperse more evenly in the alloy. These phases refine the alloy抯 matrix and make the secondary phases [t-Mg32(Al,Zn49 phase and f-Al2Mg5Zn2 phase] finer and more dispersive, therefore significantly improve the mechanical properties of the Mg-10Zn-5Al-0.1Sb alloy. When the RE addition is 1.0 wt.%, the tensile strengths of the alloy both at room temperature and 150 篊 reach the maximum values while the impact toughness is slightly lower than that of the matrix alloy. The hardness increases with the increase of RE addition.

  16. In-situ TEM studies of nanostructured thermoelectric materials: An application to Mg-doped Zn4Sb3 alloy

    DEFF Research Database (Denmark)

    Ngo, Duc-The; Le, Hung Thanh; Ngo, Nong Van

    2018-01-01

    material have been dynamically captured as a function of temperature from 300 K to 573 K. On heating, we have observed clearly precipitation and growth of a Zn-rich secondary phase as nanoinclusions in the matrix of primary Zn4Sb3 phase. Elemental mapping by STEM-EDX spectroscopy reveals enrichment of Zn...

  17. Effect of Eu{sup 3+} on the structure, morphology and optical properties of flower-like ZnO synthesized using chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Koao, L.F. [Department of Physics, University of the Free State (Qwaqwa Campus), Private Bag X13, Phuthaditjhaba ZA9866 (South Africa); Dejene, F.B., E-mail: dejenebf@qwa.ufs.ac.za [Department of Physics, University of the Free State (Qwaqwa Campus), Private Bag X13, Phuthaditjhaba ZA9866 (South Africa); Kroon, R.E. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa)

    2014-03-15

    The chemical bath deposition (CBD) method was used to synthesize ZnO undoped and Eu{sup 3+}-doped nanostructures. The Eu{sup 3+} concentration was varied from 0.2 to 5 mol%. The X-ray diffraction (XRD) spectra of the undoped and low concentration Eu{sup 3+} doped ZnO nanostructures correspond to the various planes of a single hexagonal ZnO phase. The estimated crystalline grain size was calculated using the XRD spectra and was found to be in the order of 47±5 nm and independent on the Eu{sup 3+} ion concentration up to 4 mol%. Scanning electron microscopy (SEM) micrographs, however, indicate that the addition of Eu{sup 3+} influences the morphology of the samples. In the UV–vis study the highest band gap energy was obtained for the undoped ZnO. The effective band gap energy of the ZnO decayed exponentially with the addition of Eu{sup 3+} up to 4 mol% where impurity phases started to appear. Although weak luminescence was observed for excitation above the bandgap at 300 nm the best results were obtained by exciting the Eu{sup 3+} directly through the {sup 7}F{sub 0}→{sup 5}L{sub 6} absorption band at 395 nm. Excitation at a wavelength of 395 nm produced the highest Eu{sup 3+} luminescence intensity without any noticeable ZnO defect emissions. The maximum luminescence intensity for this excitation was obtained for ZnO:3 mol% Eu{sup 3+} ions and luminescent quenching was observed for higher Eu concentrations. -- Highlights: • CBD was used to synthesize ZnO undoped and Eu{sup 3+}-doped nanostructures. • The powders having particles with flower-like morphology with good optical properties. • Weak luminescence for excitation above the bandgap at 300 nm. • Excitation at 395 nm produced the highest pure Eu{sup 3+} luminescence.

  18. Thermal conductivity of Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} solid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Caillat, T; Borshchevsky, A; Fleurial, J P

    1997-07-01

    {beta}-Zn{sub 4}Sb{sub 3} was recently identified at the Jet Propulsion Laboratory as a new high performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further improve ZT values is to alloy {beta}-Zn{sub 4}Sb{sub 3} with isostructural compounds because of the expected decrease in lattice thermal conductivity. The authors have grown Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} crystals with 0.2 {le} x < 1.2 and measured their thermal conductivity from 10 to 500K. The thermal conductivity values of Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} alloys are significantly lower than those measured for {beta}-Zn{sub 4}Sb{sub 3} and are comparable to its calculated minimum thermal conductivity. A strong atomic disorder is believed to be primarily at the origin of the very low thermal conductivity of these materials which are also fairly good electrical conductors and are therefore excellent candidates for thermoelectric applications.

  19. Tuning the luminescence of ZnO:Eu nanoparticles for applications in biology and medicine

    Science.gov (United States)

    Kaszewski, Jarosław; Kiełbik, Paula; Wolska, Ewelina; Witkowski, Bartłomiej; Wachnicki, Łukasz; Gajewski, Zdzisław; Godlewski, Marek; Godlewski, Michał M.

    2018-06-01

    Zinc oxide nanoparticles were synthesized with microwave hydrothermal technique and tested as luminescent contrast for biological imaging. Luminescence was activated by Eu3+ ions embedded in the nanoparticle matrix in the increasing concentrations of 1, 5 and 10 %mol. It was found that europium did not create a separate crystalline phase up to the concentration as high as 5 %mol. However, Eu3+ ions did not substitute Zn2+ in the host lattice, but allocated in the low symmetry environment. It was proposed that europium was locating in the inter-grain space or on the surface of nanoparticles. The luminescence intensity in ZnO:Eu, as well as the size of particles, increased with the Eu ion concentration. Moreover, in 10 %mol Eu sample, the separate phase of Eu-hydroxide was identified with crystals of micrometre length. Interestingly, in vivo study revealed, that contrary to the in silico experiments, following gastric gavage, the brightest nanoparticle-related luminescence signal was observed at 1 %mol. concentration of Eu. Since the alimentary uptake of nanoparticles was related to their size, we concluded that the increase in luminescence at 5 and 10 %mol. Eu concentrations was associated with the largest ZnO:Eu and Eu-hydroxide particles that did not cross the gastrointestinal barrier.

  20. Effects of FeSb6 octahedral deformations on the electronic structure of LaFe4Sb12

    KAUST Repository

    Pulikkotil, Jiji Thomas Joseph

    2011-09-01

    First-principles density functional based electronic structure calculations are performed in order to clarify the influence of FeSb6 octahedral deformations on the structural and electronic structure properties of LaFe 4Sb12. Our results show that octahedral tiltings correlate with the band dispersions and, consequently, the band masses. While total energy variation points at an enhanced role of lattice anharmonicity, flat bands emerge from a redistribution of the electronic states. © 2011 Elsevier B.V. All rights reserved.

  1. Low temperature Zn diffusion for GaSb solar cell structures fabrication

    Science.gov (United States)

    Sulima, Oleg V.; Faleev, Nikolai N.; Kazantsev, Andrej B.; Mintairov, Alexander M.; Namazov, Ali

    1995-01-01

    Low temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.

  2. Subsolidus phase relations of the SrO–SbOx–CuO system at 1140K in air

    DEFF Research Database (Denmark)

    Grivel, J.-C.; Norby, Poul; Andersen, Niels Hessel

    2014-01-01

    The subsolidus phase relations of the SrO–SbOx–CuO system were investigated in air. The samples were equilibrated at 1140K. Under these conditions, 7 binary oxide phases are stable: Sr2CuO3, SrCuO2, Sr14Cu24O41−δ, CuSb2O6, SrSb2O6, Sr2Sb2O7 and Sr7Sb2O12. The ternary section contains 10 three...

  3. Synthesis and photoluminescence properties of Ba{sub 2}CaZn{sub 2}Si{sub 6}O{sub 17}:Eu{sup 3+} red phosphors for white LED applications

    Energy Technology Data Exchange (ETDEWEB)

    Annadurai, G.; Kennedy, S. Masilla Moses, E-mail: kennedysmm@ssn.edu.in

    2016-01-15

    Novel pellyite type Ba{sub 2}CaZn{sub 2}Si{sub 6}O{sub 17}:Eu{sup 3+} red emitting phosphors with different Eu{sup 3+} contents were synthesized by the solid state reaction method. The crystal structure, photoluminescence properties and concentration quenching of Ba{sub 2}CaZn{sub 2}Si{sub 6}O{sub 17}:Eu{sup 3+} phosphors were investigated. Powder X-ray diffraction measurements confirmed the structure of the samples. The photoluminescence emission (PL) and excitation (PLE) spectra were measured. The results showed that the dominant hypersensitive red emission peak of the phosphors Ba{sub 2}CaZn{sub 2}Si{sub 6}O{sub 17}:Eu{sup 3+} was located at 613 nm attributed to the Eu{sup 3+} transition ({sup 5}D{sub 0}→{sup 7}F{sub 2}) which could be effectively excited by 395 nm (near-UV). The latter band matched well with the emission from the near-UV LED chips. The intensity ratio of {sup 5}D{sub 0}→{sup 7}F{sub 2} to {sup 5}D{sub 0}→{sup 7}F{sub 1} transition showed slight variation with Eu{sup 3+} concentrations. The Eu{sup 3+} emission intensity was maximum for 9 mol%. The luminescence quantum efficiency was determined and also the decay profiles were obtained and analyzed. In addition, the Commission International del'Eclairage (CIE) chromaticity coordinates of Ba{sub 2}CaZn{sub 2}Si{sub 6}O{sub 17}:0.09Eu{sup 3+} phosphor were calculated to be 0.637 and 0.362. The experimental results demonstrated that the Ba{sub 2}CaZn{sub 2}Si{sub 6}O{sub 17}:Eu{sup 3+} red emitting phosphor is a potential candidate for white light emitting diodes (WLEDs) pumped by near-UV chip. - Highlights: • A novel Ba{sub 2}CaZn{sub 2}Si{sub 6}O{sub 17}:Eu{sup 3+} red phosphor was synthesized. • The samples yielded a dominant PL emission of Eu{sup 3+} at 613 nm. • Eu{sup 3+} concentration was optimized to be 9 mol% in Ba{sub 2}CaZn{sub 2}Si{sub 6}O{sub 17.} • CIE chromaticity coordinates were estimated from the emission spectrum.

  4. Single step hydrothermal based synthesis of M(II)Sb2O6 (M = Cd ...

    Indian Academy of Sciences (India)

    characterized by powder X-ray diffraction, scanning electron microscopy, energy dispersive .... SEM images and EDAX analysis of (a) and (b) CdSb2O6 and (c) and (d) ZnSb2O6. ... The parent compound, ilmenite (NaSbO3) could degrade MB.

  5. Twinning in ZnO ceramics with Sb sub 2 O sub 3 additions

    Energy Technology Data Exchange (ETDEWEB)

    Senda, T. (Ministry of Transportation, Tokyo (Japan). Ship Research Inst.); Bradt, R.C. (Univ. of Nevada-Reno, Nevada (U.S.A.). Mackay School of Mines)

    1991-09-01

    A mechanism is proposed for the nucleation of ZnO growth twins which is based on the crystallography of the wurtzite and spinel structures. In this paper, possible twin origins from either phase transformation or a result of deformation are both rejected. It is concluded that the ZnO twins are growth twins which nucleate in the early stages of sintering and grain growth of the ceramic powder compacts. Consideration of the oxygen anion stacking layer sequences in the hexagonal ZnO wurtzite structure and the cubic Zn {sub 7} Sb {sub 2} O {sub 12} spinel structure suggests that the nuclei for the twins may form as embryos consisting of a faulted region of the spinel-oxygen anion layer stacking sequence. And then, the faulted layer sequence is created by the presence of the antimony oxide and its reaction with the ZnO. Further, the fact that the wurtzite structure is polar and the ZnO twins are inversion twins explains why there is only a single twin per grain, as multiple twins would result in the unfavorable structural configuration. 24 refs., 2 figs.

  6. Structure-composition sensitivity in 'Metallic' Zintl phases: A study of Eu(Ga1-xTtx)2 (Tt=Si, Ge, 0≤x≤1)

    International Nuclear Information System (INIS)

    You, Tae-Soo; Zhao Jingtai; Poettgen, Rainer; Schnelle, Walter; Burkhardt, Ulrich; Grin, Yuri; Miller, Gordon J.

    2009-01-01

    Two isoelectronic series, Eu(Ga 1-x Tt x ) 2 (Tt=Si, Ge, 0≤x≤1), have been synthesized and characterized by powder and single-crystal X-ray diffraction, physical property measurements, and electronic structure calculations. In Eu(Ga 1-x Si x ) 2 , crystal structures vary from the KHg 2 -type to the AlB 2 -type, and, finally, the ThSi 2 -type structure as x increases. The hexagonal AlB 2 -type structure is identified for compositions 0.18(2)≤x 3 nets. As smaller Si atoms replace Ga atoms while the number of valence electrons increases, the lattice parameters, unit cell volumes, and Ga-Si distances in this phase region decrease significantly. Although aspects of X-ray diffraction results suggest puckering of the 6 3 nets for the Si-richest example of the AlB 2 -type Eu(Ga 1-x Si x ) 2 , the complete experimental evidence remains inconclusive. On the other hand, in Eu(Ga 1-x Ge x ) 2 , six different structural types were observed as x varies. In addition to EuGa 2 (KHg 2 -type; space group Imma) and EuGe 2 (own structure type, space group P3-barm1), the ternary phases studied show four different structures: the AlB 2 -type for Ga-rich compositions; the YPtAs-type structure for EuGaGe; and two new structures, which are intergrowths of the YPtAs-type EuGaGe and EuGe 2 , for Ge-rich compositions. These two Ge-rich phases include: (1) Eu(Ga 0.45(2) Ge 0.55(2) ) 2 containing two YPtAs-type motifs of EuGaGe plus one EuGe 2 motif; and (2) Eu(Ga 0.40(2) Ge 0.60(2) ) 2 containing one YPtAs-type motif alternating with a split site at x=2/3 ,y=1/3 and z=0.4798(2) with ca. 50% site occupancy by Ga and Ge along the c-axis. Magnetic susceptibilities of three Eu(Ga 1-x Ge x ) 2 compounds display Curie-Weiss behavior above ca. 100 K, and show effective magnetic moments indicative of divalent Eu with a 4f 7 electronic configuration, consistent with. X-ray absorption spectra (XAS). Density of states (DOS) and crystal orbital Hamilton population (COHP) analyses, based on first

  7. Room temperature ferromagnetism in Eu-doped ZnO nanoparticulate powders prepared by combustion reaction method

    International Nuclear Information System (INIS)

    Franco, A.; Pessoni, H.V.S.; Soares, M.P.

    2014-01-01

    Nanoparticulate powders of Eu-doped ZnO with 1.0, 1.5, 2.0 and 3.0 at% Eu were synthesized by combustion reaction method using zinc nitrate, europium nitrate and urea as fuel without subsequent heat treatments. X-ray diffraction patterns (XRD) of all samples showed broad peaks consistent with the ZnO wurtzite structure. The absence of extra reflections in the diffraction patterns ensures the phase purity, except for x=0.03 that exhibits small reflection corresponding to Eu 2 O 3 phase. The average crystallite size determined from the most prominent (1 0 1) peak of the diffraction using Scherrer's equation was in good agreement with those determined by transmission electron microscopy (TEM); being ∼26 nm. The magnetic properties measurements were performed using a vibrating sample magnetometer (VSM) in magnetic fields up to 2.0 kOe at room temperature. The hysteresis loops, typical of magnetic behaviors, indicating that the presence of an ordered magnetic structure can exist in the Eu-doped ZnO wurtzite structure at room temperature. The room temperature ferromagnetism behavior increases with the Eu 3+ doping concentration. All samples exhibited the same Curie temperature (T C ) around ∼726 K, except for x=0.01; T C ∼643 K. High resolution transmission electron microscopy (HRTEM) images revealed defects/strain in the lattice and grain boundaries of Eu-doped ZnO nanoparticulate powders. The origin of room temperature ferromagnetism in Eu-doped ZnO nanoparticulate powders was discussed in terms of these defects, which increase with the Eu 3+ doping concentration. - Highlights: • Room-temperature ferromagnetism. • Structural and magnetic properties of nanoparticulate powders of Zn 1−x Eu x O. • Combustion reaction method

  8. Uncooled EuSbTe3 photodetector highly sensitive from ultraviolet to terahertz frequencies

    Science.gov (United States)

    Niu, Ying Y.; Wu, Dong; Su, Yu Q.; Zhu, Hai; Wang, Biao; Wang, Ying X.; Zhao, Zi R.; Zheng, Ping; Niu, Jia S.; Zhou, Hui B.; Wei, Jian; Wang, Nan L.

    2018-01-01

    Light probe from Uv to THz is critical in photoelectronics and has great applications ranging from imaging, communication to medicine (Woodward et al 2002 Phys. Med. Biol. 47 3853-63 Pospischil et al 2013 Nat. Photon. 7 892-6 Martyniuk and Rogalski 2003 Prog. Quantum Electron. 27 59-210). However, the room temperature ultrabroadband photodetection across visible down to far-infrared is still challenging. The challenging arises mainly from the lack of suitable photoactive materials. Because that conventional semiconductors, such as silicon, have their photosensitive properties cut off by the bandgap and are transparent to spectrum at long-wavelength infrared side (Ciupa and Rogalski 1997 Opto-Electron. Rev. 5 257-66 Tonouchi 2007 Nat. Photon. 1 97-105 Sizov and Rogalski 2010 Prog. Quantum Electron. 34 278-347 Kinch 2000 J. Electron. Mater. 29 809-17). Comparatively, the dielectrics with very narrow band-gap but maintain the semiconductor-like electrical conduction would have priorities for ultrabroadband photodetection. Here we report on EuSbTe3 is highly sensitive from ultraviolet directly to terahertz (THz) at room temperature. High photoresponsivities 1-8 A W-1 reached in our prototype EuSbTe3 detectors with low noise equivalent power (NEP) recorded, for instances ~150 pW · Hz-1/2 (at λ  =  532 nm) and ~0.6 nW · Hz-1/2 (at λ  =  118.8 µm) respectively. Our results demonstrate a promising system with direct photosensitivity extending well into THz regime at room temperature, shed new light on exploring more sophisticated multi-band photoelectronics.

  9. Crystal structure, chemical bond and enhanced performance of β-Zn{sub 4}Sb{sub 3} compounds with interstitial indium dopant

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Dingguo [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Key Laboratory of Catalysis and Materials Science of the State Ethnic Affair Commission and Ministry of Education, South-Central University for Nationalities, Wuhan 430074 (China); Zhao, Wenyu, E-mail: wyzhao@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Yu, Jian; Wei, Ping; Zhou, Hongyu; Zhu, Wanting [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Zhang, Qingjie, E-mail: zhangqj@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)

    2014-07-15

    Highlights: • The interstitial In dopant leads to the local structural perturbations in β-Zn{sub 4}Sb{sub 3}. • The simultaneous increases in α and σ are observed in the In-doped Zn{sub 4}Sb{sub 3} compounds. • The In dopant plays different doping behaviors by the dopant contents in the samples. • A maximum ZT of 1.41 at 700 K is achieved for the In-doped Zn{sub 4}Sb{sub 3} compounds. - Abstract: In-doped β-Zn{sub 4}Sb{sub 3} compounds (Zn{sub 4−x}In{sub x}Sb{sub 3}, 0 ⩽ x ⩽ 0.24) were prepared by melt-quenching and spark plasma sintering technology in the work. The resultant samples were systematically investigated by X-ray diffraction, X-ray photoelectron spectroscopy, differential scanning calorimetry and thermoelectric property measurements. The In dopant was identified to preferentially occupy the interstitial site in β-Zn{sub 4}Sb{sub 3} and led to the local structural perturbations near the 12c Sb2 and 36f Zn1 sites. The Auger parameters of Zn and Sb indicated that the increase in the valence of Zn was attributed to the charge transfer from Zn to In atoms. The binding energies of In 3d{sub 5/2} core level showed that the interstitial In dopant was n-type dopant (In{sup 3+}) in slightly In-doped Zn{sub 4−x}In{sub x}Sb{sub 3}, but acted as acceptor and was p-type dopant (In{sup +}) in heavily In-doped ones. The discovery provides a reasonable explanation for the puzzled relation between σ and x for Zn{sub 4−x}In{sub x}Sb{sub 3}. Simultaneously increasing the electrical conductivity and Seebeck coefficient of Zn{sub 4−x}In{sub x}Sb{sub 3} can be realized through the local structural perturbations. The significantly enhanced power factor and the intrinsic low thermal conductivity resulted in a remarkable increase in the dimensionless figure of merit (ZT). The highest ZT reached 1.41 at 700 K for Zn{sub 3.82}In{sub 0.18}Sb{sub 3} and increased by 68% compared with that of the undoped β-Zn{sub 4}Sb{sub 3}.

  10. Development in Zn4Sb-based thermoelectric materials

    DEFF Research Database (Denmark)

    Yin, Hao

    or thermopower,  the electrical conductivity, the thermal conductivity and T the absolute temperature. The best thermoelectrics are heavily doped semiconductors with high thermoelectric power factors and low thermal conductivities, known as “Phonon Glasses Electrical Crystals”. Zn4Sb3 is one such material......-section. The following part reports the effect of nano-particles on the thermoelectric properties and thermal stability of Zn4Sb3. Though TiO2 nano particles have remarkably enhanced the stability, the thermoelectric performance of all the nano-composites deteriorates. Optimization of the content of the nano...

  11. Crystal structures of KM(AsF6)3 (M2+ = Mg, Co, Mn, Zn), KCu(SbF6)3 and [Co(HF)2]Sr[Sr(HF)]2-[Sr(HF)2]2[AsF6]12

    International Nuclear Information System (INIS)

    Mazej, Zoran; Goreshnik, Evgeny

    2015-01-01

    The KM(AsF 6 ) 3 (M 2+ = Mg, Co, Mn, Zn) and KCu(SbF 6 ) 3 compounds crystallize isotypically to previously known KNi(AsF 6 ) 3 . The main features of the structure of these compounds are rings of MF 6 octahedra sharing apexes with AsF 6 octahedra connected into infinite tri-dimensional frameworks. In this arrangement cavities are formed where K + cations are placed. Single crystals of CoSr 5 (AsF 6 ) 12 .8HF were obtained as one of the products after the crystallization of 3KF/CoF 2 /SrF 2 mixture in the presence of AsF 5 in anhydrous HF. The CoSr 5 (AsF 6 ) 12 .8HF is monoclinic, C/2c (No.15), with a = 26.773(5) Aa, b = 10.087(2) Aa, c = 21.141(5) Aa, β = 93.296(13) circle , V = 5699.9(19) Aa 3 at 200 K, and Z = 4. There are three crystallographically non-equivalent Sr 2+ cations in the crystal structure of CoSr 5 (AsF 6 ) 12 .8HF. The Sr1 is coordinated by ten fluorine atoms from eight different [AsF 6 ]- anions, meanwhile Sr2 and Sr3 are bound to nine fluorine atoms provided by one HF and eight AsF 6 units or by two HF and six AsF 6 units, respectively. The Co 2+ is coordinated distorted-octahedrally by six fluorine atoms from two HF molecules and four different AsF 6 units. All those moieties in the crystal structure of [Co(HF) 2 ]Sr[Sr(HF)] 2 [Sr(HF) 2 ] 2 [AsF 6 ] 12 are connected into tridimensional framework. The CoSr 5 (AsF 6 ) 12 .8HF is a unique example of compound where HF molecules are directly bound via fluorine atoms to two different metal centres.

  12. Luminescence properties of rare earth doped metal oxide nanostructures: A case of Eu-ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Sahu, D. [School of Basic Sciences, Centurion University of Technology and Management, Odisha-752050 India (India); Acharya, B. S. [Department of Physics, C.V. Raman College of Engineering, Bhubaneswar, Odisha, India-752054 (India); Panda, N. R., E-mail: nihar@iitbbs.ac.in [School of Basic Sciences, Indian Institute of Technology Bhubaneswar, Odisha-751013 India (India)

    2016-05-06

    The present study reports the growth and luminescence properties of Eu doped ZnO nanostructures. The experiment has been carried out by synthesizing the materials by simple wet-chemical method. X-ray diffraction (XRD) studies show expansion of ZnO lattice with the incorporation of Eu ions which has been confirmed from the appearance of Eu{sub 2}O{sub 3} as a minor phase in the XRD pattern. The estimation of crystallite size from XRD results matches closely with the results obtained from transmission electron microscopy. Further, these results show the formation of nanosized Eu-ZnO particles of average size around 60 nm stacked on each other. FTIR studies show the presence of both Zn-O and Eu-O modes in the spectra supporting the results obtained from XRD. The interesting results obtained from photoluminescence (PL) measurements show the presence of both band edge emission in UV region and the defect emissions in violet, blue and green region. The appearance of {sup 5}D{sub 0}→{sup 7}F{sub J} transitions of Eu{sup 3+} ions in red region clearly suggests the possible occurrence of energy transfer between the energy states of ZnO host and Eu{sup 3+} ions.

  13. Ultrasonic dispersion and off-center rattling in heavy fermion superconductor PrOs4Sb12

    International Nuclear Information System (INIS)

    Nemoto, Yuichi; Ueno, Takafumi; Takeda, Naoya; Yamaguchi, Takashi; Yanagisawa, Tatsuya; Goto, Terutaka; Sugawara, Hitoshi; Sato, Hideyuki

    2006-01-01

    Ultrasonic attenuation measurements have been firstly performed for a large single crystal of PrOs 4 Sb 12 with the dimensions of 5.97x0.6x0.6mm 3 . Remarkable frequency dependence around 20-40K has been observed in the elastic constant and attenuation coefficient of the longitudinal C 11 mode associated with E g symmetry strain in part, which results from a thermally activated off-center rattling with E g symmetry of a Pr ion inside a Sb icosahedron cage. Parameters of a characteristic time τ 0 =3.1x10 -11 s and an activation energy E=225K were obtained. This E g rattling involving a local charge fluctuation inside a Sb cage periodically arranged may couple to the conduction electrons. As a result, the electron-phonon coupling would lead to heavy fermion and its superconductivity in PrOs 4 Sb 12

  14. Hydrogen storage properties of the Zintl phase alloy SrAl{sub 2} doped with TiF{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Yunfeng, E-mail: yfzhu@njut.edu.c [College of Materials Science and Engineering, Nanjing University of Technology, 5 Xinmofan Road, Nanjing 210009 (China); Zhang Wei; Liu Zhibing; Li Liquan [College of Materials Science and Engineering, Nanjing University of Technology, 5 Xinmofan Road, Nanjing 210009 (China)

    2010-03-04

    In this paper, the structural and hydrogenation characteristics of TiF{sub 3}-doped Zintl phase alloy SrAl{sub 2} were studied by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and hydrogenation measurements. The results show that the hydrogenation kinetics of the Zintl phase alloy SrAl{sub 2} is improved greatly after doping with TiF{sub 3}. By adjusting the doping amount and ball milling time, the optimal doping conditions were obtained. The catalytic mechanism of TiF{sub 3} for the hydrogenation of SrAl{sub 2} was also investigated. SrAl{sub 2} does not react with TiF{sub 3} during the ball milling process. However, it reacts with TiF{sub 3} to form SrAl{sub 2}H{sub 2}, SrF{sub 2}, SrAl{sub 4} and Ti during the hydrogenation process, among which Ti plays an important role in the hydrogenation kinetics of SrAl{sub 2}.

  15. PL and EL characterizations of ZnO:Eu3+, Li+ films derived by sol-gel process

    International Nuclear Information System (INIS)

    Xue Daoqi; Zhang Junying; Yang Chun; Wang Tianmin

    2008-01-01

    ZnO:Eu 3+ , Li + films prepared by the dip-coating method were characterized by photoluminescence (PL) and electroluminescence (EL). When the ZnO:Eu 3+ , Li + films were excited using UV light with energy corresponding to the band-to-band excitation of the host matrix, the PL spectra showed emissions from both ZnO and Eu 3+ ions, while their EL spectra showed emissions only from Eu 3+ ions, and no emission from ZnO could be detected. It is found that the EL emission intensity B is dependent on the applied voltage, B=B o exp(-bV -1/2 ). With increasing frequency, the EL intensity dramatically increases at lower frequencies ( 1000 Hz)

  16. Enhanced luminescence in Eu-doped ZnO nanocrystalline films

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Keigo, E-mail: ksuzuki@murata.com; Murayama, Koji; Tanaka, Nobuhiko [Murata Manufacturing Co., Ltd., 10-1, Higashikotari 1-chome, Nagaokakyo, Kyoto 617-8555 (Japan)

    2015-07-20

    We found an enhancement of Eu{sup 3+} emissions in Eu-doped ZnO nanocrystalline films fabricated by microemulsion method. The Eu{sup 3+} emission intensities were increased by reducing annealing temperatures from 633 K to 533 K. One possible explanation for this phenomenon is that the size reduction enhances the energy transfer from ZnO nanoparticles to Eu{sup 3+} ions. Also, the shift of the charge-transfer band into the low-energy side of the absorption edge is found to be crucial, which seems to expedite the energy transfer from O atoms to Eu{sup 3+} ions. These findings will be useful for the material design of Eu-doped ZnO phosphors.

  17. Sorghum phytochrome B inhibits flowering in long days by activating expression of SbPRR37 and SbGHD7, repressors of SbEHD1, SbCN8 and SbCN12.

    Directory of Open Access Journals (Sweden)

    Shanshan Yang

    Full Text Available Light signaling by phytochrome B in long days inhibits flowering in sorghum by increasing expression of the long day floral repressors PSEUDORESPONSE REGULATOR PROTEIN (SbPRR37, Ma1 and GRAIN NUMBER, PLANT HEIGHT AND HEADING DATE 7 (SbGHD7, Ma6. SbPRR37 and SbGHD7 RNA abundance peaks in the morning and in the evening of long days through coordinate regulation by light and output from the circadian clock. 58 M, a phytochrome B deficient (phyB-1, ma3R genotype, flowered ∼60 days earlier than 100 M (PHYB, Ma3 in long days and ∼11 days earlier in short days. Populations derived from 58 M (Ma1, ma3R, Ma5, ma6 and R.07007 (Ma1, Ma3, ma5, Ma6 varied in flowering time due to QTL aligned to PHYB/phyB-1 (Ma3, Ma5, and GHD7/ghd7-1 (Ma6. PHYC was proposed as a candidate gene for Ma5 based on alignment and allelic variation. PHYB and Ma5 (PHYC were epistatic to Ma1 and Ma6 and progeny recessive for either gene flowered early in long days. Light signaling mediated by PhyB was required for high expression of the floral repressors SbPRR37 and SbGHD7 during the evening of long days. In 100 M (PHYB the floral activators SbEHD1, SbCN8 and SbCN12 were repressed in long days and de-repressed in short days. In 58 M (phyB-1 these genes were highly expressed in long and short days. Furthermore, SbCN15, the ortholog of rice Hd3a (FT, is expressed at low levels in 100 M but at high levels in 58 M (phyB-1 regardless of day length, indicating that PhyB regulation of SbCN15 expression may modify flowering time in a photoperiod-insensitive manner.

  18. Lattice location of the group V elements Sb, As, and P in ZnO

    CERN Document Server

    Wahl, Ulrich; Mendonça, Tânia; Decoster, Stefan

    2010-01-01

    Modifying the properties of ZnO by means of incorporating antimony, arsenic or phosphorus impurities is of interest since these group V elements have been reported in the literature among the few successful p-type dopants in this technologically promising II-VI compound. The lattice location of ion-implanted Sb, As, and P in ZnO single crystals was investigated by means of the electron emission channeling technique using the radioactive isotopes $^{124}$Sb, $^{73}$As and $^{33}$P and it is found that they preferentially occupy substitutional Zn sites while the possible fractions on substitutional O sites are a few percent at maximum. The lattice site preference is understandable from the relatively large ionic size of the heavy mass group V elements. Unfortunately the presented results cannot finally settle the interesting issue whether substitutional Sb, As or P on oxygen sites or Sb$_{Zn}$−2V$_{Zn}$, As$_{Zn}$−2V$_{Zn}$ or P$_{Zn}$−2V$_{Zn}$ complexes (as suggested in the literature) are responsible f...

  19. Chemical and structural arrangement of the trigonal phase in GeSbTe thin films.

    Science.gov (United States)

    Mio, Antonio M; Privitera, Stefania M S; Bragaglia, Valeria; Arciprete, Fabrizio; Bongiorno, Corrado; Calarco, Raffaella; Rimini, Emanuele

    2017-02-10

    The thermal and electrical properties of phase change materials, mainly GeSbTe alloys, in the crystalline state strongly depend on their phase and on the associated degree of order. The switching of Ge atoms in superlattice structures with trigonal phase has been recently proposed to develop memories with reduced switching energy, in which two differently ordered crystalline phases are the logic states. A detailed knowledge of the stacking plane sequence, of the local composition and of the vacancy distribution is therefore crucial in order to understand the underlying mechanism of phase transformations in the crystalline state and to evaluate the retention properties. This information is provided, as reported in this paper, by scanning transmission electron microscopy analysis of polycrystalline and epitaxial Ge 2 Sb 2 Te 5 thin samples, using the Z-contrast high-angle annular dark field method. Electron diffraction clearly confirms the presence of compositional mixing with stacking blocks of 11, 9 or 7 planes corresponding to Ge 3 Sb 2 Te 6 , Ge 2 Sb 2 Te 5 , and GeSb 2 Te 4 , alloys respectively in the same trigonal phase. By increasing the degree of order (according to the annealing temperature, the growth condition, etc) the spread in the statistical distribution of the blocks reduces and the distribution of the atoms in the cation planes also changes from a homogenous Ge/Sb mixing towards a Sb-enrichment in the planes closest to the van der Waals gaps. Therefore we show that the trigonal phase of Ge 2 Sb 2 Te 5 , the most studied chalcogenide for phase-change memories, is actually obtained in different configurations depending on the distribution of the stacking blocks (7-9-11 planes) and on the atomic occupation (Ge/Sb) at the cation planes. These results give an insight in the factors determining the stability of the trigonal phase and suggest a dynamic path evolution that could have a key role in the switching mechanism of interfacial phase change memories

  20. Synthesis and photoluminescence properties of self-assembled Eu-doped ZnO hollow microspheres

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Jin [Department of Materials Science and Engineering, College of Materials, Xiamen University, Siming South Road 422, 361005 Xiamen (China); Key Laboratory for Fire Retardant Materials of Fujian Province, Xiamen University, Siming South Road 422, 361005 Xiamen (China); Wang, Nating; Wang, Weiqiang [Department of Materials Science and Engineering, College of Materials, Xiamen University, Siming South Road 422, 361005 Xiamen (China)

    2011-12-15

    ZnO hollow microspheres with a shell wall consisting of crystalline ZnO nanosheets were synthesized by using Zn{sub 5}(CO{sub 3}){sub 2}(OH){sub 6} microspheres as spherical templates. Zn{sub 5}(CO{sub 3}){sub 2}(OH){sub 6} microspheres were first fabricated by a solvothermal procedure in an ethylene glycol (EG)-water solution. ZnO microspheres with a hexagonal structure were identified by means of X-ray diffraction (XRD) and selected-area electron diffraction (SAED). On the basis of the results, a possible self-assembly growth mechanism was proposed. It reveals that the EG played an important role in determining the hollow morphologies of Zn{sub 5}(CO{sub 3}){sub 2}(OH){sub 6} structures. In addition, photoluminescence (PL) investigation of ZnO:Eu{sup 3+} suggested that a direct energy transfer occurred, which was ascribed to the energy transfer from ZnO host to Eu{sup 3+} ions. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Synthesis and photoluminescence properties of Eu{sup 3+}, Sm{sup 3+} and Pr{sup 3+} doped Ca{sub 2}ZnWO{sub 6} phosphors for phosphor converted LED

    Energy Technology Data Exchange (ETDEWEB)

    Dabre, K.V. [Department of Physics, Arts, Commerce and Science College, Koradi, Nagpur-441111, Maharashtra (India); Dhoble, S.J., E-mail: sjdhoble@rediffmail.com [Department of Physics, R.T.M. Nagpur University, Nagpur-440033, Maharashtra (India)

    2014-06-01

    In this work, we report on the synthesis and photoluminescence (PL) properties of rare earth (Eu{sup 3+}, Sm{sup 3+} and Pr{sup 3+}) doped double perovskite tungstate Ca{sub 2}ZnWO{sub 6} phosphor. The phosphors were synthesized by two step modified solid state method. Phase purity and formation of phosphor were confirmed by XRD technique. PL spectra of Eu{sup 3+}, Sm{sup 3+} and Pr{sup 3+} doped phosphor show intense emission peaks in red region at 615, 604 and 650 nm respectively, upon the visible excitation of 466 nm (Eu{sup 3+}), 410 nm (Sm{sup 3+}) and 491 nm (Pr{sup 3+}). The CIE coordinates of the phosphors are in the yellow (Sm{sup 3+} doped sample) and orange (Eu{sup 3+} and Pr{sup 3+} doped sample) regions near the edge of color space which confirms their applicability in LEDs. -- Highlights: •Eu{sup 3+}, Sm{sup 3+} and Pr{sup 3+} doped and undoped samples of Ca{sub 2}ZnWO{sub 6} phosphor synthesized by Solid state method. •The phosphors have intense excitation in violet and blue region of visible spectrum. •Phosphors show intense emission peaks in red region. •CIE coordinates of phosphors are lie in yellow (Sm{sup 3+} doped phosphor) and orange (Eu{sup 3+} and Pr{sup 3+} doped phosphor) region near to edge of color space.

  2. Photoelectrochemical properties of hierarchical ZnO micro-nanostructure sensitized with Sb2S3 nanoparticles

    Directory of Open Access Journals (Sweden)

    Zhimin GUO

    2016-02-01

    Full Text Available By using electrochemical deposition method, and assisted with additions of PEG-400 and EDA, well-aligned ZnO nanorods and hierarchical ZnO micro-nanostructure are fabricated directly on indium doped tin oxide coated conducting glass (ITO substrate. The shell-core Sb2S3/ZnO nanorod structure and the shell-core hierarchical Sb2S3/ZnO micro-nanostructure are prepared by chemical bath deposition method. SEM, XRD, UV-Vis and photocurrent test are used to characterize the morphology, nanostructures and their photoelectrochemical properties. The studies show that the photocurrent on the array membranes with shell-core hierarchical Sb2S3/ZnO micro-nanostructure is apparently higher than that with shell-core Sb2S3/ZnO nanorods array.

  3. Electronic structure and high pressure phase transition in LaSb and CeSb

    International Nuclear Information System (INIS)

    Mathi Jaya, S.; Sanyal, S.P.

    1992-09-01

    The electronic structure and high pressure structural phase transition in cerium and lanthanum antimonides have been investigated using the tight binding LMTO method. The calculation of total energy reveals that the simple tetragonal structure is found to be stable at high pressures for both the compounds. In the case of LaSb, the calculated value of the equilibrium cell volume and the cell volume at which phase transition occurs are found to have a fairly good agreement with the experimental results. However, in the case of CeSb, the agreement is not as good as in LaSb. We also predicted the most favoured c/a value in the high pressure phase (simple tetragonal) for these compounds. Further we present the calculated results on the electronic structure of these systems at the equilibrium as well as at the reduced cell volumes. (author). 8 refs, 11 figs, 1 tab

  4. Disordered Zinc in Zn4Sb3 with Phonon-Glass and Electron-Crystal Thermoelectric Properties

    Science.gov (United States)

    Snyder, G. Jeffrey; Christensen, Mogens; Nishibori, Eiji; Caillat, Thierry; Brummerstedt Iversen, Bo

    2004-01-01

    By converting waste heat into electricity, thermoelectric generators could be an important part of the solution to today's energy challenges. The compound Zn4Sb3 is one of the most efficient thermoelectric materials known. Its high efficiency results from an extraordinarily low thermal conductivity in conjunction with the electronic structure of a heavily doped semiconductor. Previous structural studies have been unable to explain this unusual combination of properties. Here, we show through a comprehensive structural analysis using single-crystal X-ray and powder-synchrotron-radiation diffraction methods, that both the electronic and thermal properties of Zn4Sb3 can be understood in terms of unique structural features that have been previously overlooked. The identification of Sb3- ions and Sb-2(4-) dimers reveals that Zn4Sb3 is a valence semiconductor with the ideal stoichiometry Zn13Sb10. In addition, the structure contains significant disorder, with zinc atoms distributed over multiple positions. The discovery of glass-like interstitial sites uncovers a highly effective mechanism for reducing thermal conductivity. Thus Zn4Sb3 is in many ways an ideal 'phonon glass, electron crystal' thermoelectric material.

  5. Theoretical prediction of thermodynamic activities of liquid Au-Sn-X (X=Bi, Sb, Zn) solder systems

    Energy Technology Data Exchange (ETDEWEB)

    Awe, O.E., E-mail: draweoe2004@yahoo.com [Department of Physics, University of Ibadan, Ibadan (Nigeria); Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife (Nigeria); Oshakuade, O.M. [Department of Physics, University of Ibadan, Ibadan (Nigeria)

    2017-02-15

    Molecular interaction volume model has been theoretically used to predict the thermodynamic activities of tin in Au-Sn-Bi and Au-Sn-Sb and the thermodynamic activity of zinc in Au-Sn-Zn at experimental temperatures 800 K, 873 K and 973 K, respectively. On the premise of agreement between the predicted and experimental values, we predicted the activities of the remaining two components in each of the three systems. This prediction was extended from three cross-sections to five cross-sections, and to temperature range 400–600 K, relevant for applications. Iso-activities were plotted. Results show that addition of tin reduces the tendency for chemical short range order in both Au-Sb and Au-Zn systems, while addition of gold and bismuth, respectively, reduce the tendency for chemical short range order in Sn-Sb and Au-Sn systems. Also, we found that, in the desired high-temperature region for applications, while a combination of chemical order and miscibility of components exist in both Au-Sn-Bi and Au-Sn-Zn systems, only chemical order exist in the Au-Sn-Sb system. Results, further show that increase in temperature reduces the phase separation tendency in Au-Sn-Bi system.

  6. Neutron Activation Resonance Integrals of 64Zn, 68Zn, 85Rb, 100Mo, 102Ru, 113In, 123Sb, and 180Hf

    International Nuclear Information System (INIS)

    Ricabarra, M. D.; Turjanski, R.; Ricabarra, G. H.

    1969-01-01

    The ratio of resonance integral to thermal activation cross sections of the isotopes 64 Zn, 68 Zn, 85 Rb, 100 Mo, 102 Ru, 113 In, 123 Sb, and 180 Hf relative to gold has been determined by measuring cadmium ratios. The standard gold or a secondary standard was mixed uniformly in the samples and the activities resolved with a lithium-drift germanium γ-ray spectrometer. Expressed as Westcott S 0 values the results were: 64 Zn = 2.06 ± 0.03, 68 Zn = 3.72 ± 0.14, 85 Rb = 18.4 ± 0.6, 100 Mo = 21.7 ± 0.8, 102 Ru = 3.76 ± 0.03, 113 In = 24.7 ± 0.5, 123 Sb = 28.3 ± 2.1, 180 Hf = 2.17 ± 0.09. All measurements are relative to S 0 = 17.7 for gold. (author)

  7. Spin 1/2 Delafossite Honeycomb Compound Cu5SbO6

    DEFF Research Database (Denmark)

    Climent-Pascual, E.; Norby, Poul; Andersen, Niels Hessel

    2012-01-01

    Cu5SbO6 is found to have a monoclinic, Delafossite-derived structure consisting of alternating layers of O–Cu(I)–O sticks and magnetic layers of Jahn–Teller distorted Cu(II)O6 octahedra in an edge sharing honeycomb arrangement with Sb(V)O6 octahedra. This yields the structural formula Cu(I)3Cu(II...

  8. Preparation, optical properties of ZnO, ZnO:Al nanorods and Y(OH)3:Eu nanotube

    International Nuclear Information System (INIS)

    Tran Kim Anh; Dinh Xuan Loc; Lam thi Kieu Giang; Le Quoc Minh; Strek, Wieslaw

    2009-01-01

    ZnO, ZnO:Al nanorods and Y(OH) 3 nanotubes have been prepared by the chemical vapor deposition and liquid phase synthesis. ZnO nanorods with diameter of 50 - 100 nm and length of 5 μm have been obtained by the CVD method. ZnO:Al nanorods were synthesized by the hydrothermal method from ZnSO 4. and Al 2 (SO 4 ) 3 . Nanorods and nanotubes of Y(OH) 3 with diameter of 200 nm and length of several micrometers were prepared by the soft template method. The crystal structure and morphology of rods and tubes were analyzed by the X-Ray diffraction and FE-SEM. The influence of fabrication conditions and Al, Eu concentration have been discussed.

  9. Processing and properties of ZnO-based varistors

    Energy Technology Data Exchange (ETDEWEB)

    de Bracho, E.O.

    1981-10-01

    The objective of this work is to study the influence of sintering temperature and additive content on the electrical characteristics and microstructure of ZnO based varistors with Bi/sub 2/O/sub 3/ (always present), Sb/sub 2/O/sub 3/, Co/sub 3/O/sub 4/, MnO/sub 2/ and Cr/sub 2/O/sub 3/ as additive oxides. The influence of sintering temperature and additive content on the electrical characteristics of ZnO based varistors without Bi/sub 2/O/sub 3/, but with additives from the rare-earth oxide series such as Eu/sub 2/O/sub 3/, La/sub 2/O/sub 3/, Pr/sub 6/O/sub 11/ and Ho/sub 2/O/sub 3/, is also studied. Procedures and results are presented in detail.

  10. Low temperature photoluminescence and photoacoustic characterization of Zn-doped InxGa1-xAsySb1-y epitaxial layers for photovoltaic applications

    International Nuclear Information System (INIS)

    Gomez-Herrera, M.L.; Herrera-Perez, J.L.; Rodriguez-Fragoso, P.; Riech, I.; Mendoza-Alvarez, J.G.

    2008-01-01

    In this paper we present results on the characterization of Zn-doped InGaAsSb epitaxial layers to be used in the development of stacked solar cells. Using the liquid phase epitaxy technique we have grown p-type InGaAsSb layers, using Zn as the dopant, and n-type Te-doped GaSb wafers as substrates. A series of Zn-doped InGaAsSb samples were prepared by changing the amount of Zn in the melt in the range: 0.1-0.9 mg to obtain different p-type doping levels, and consequently, different p-n region characteristics. Low temperature photoluminescence spectra (PL) were measured at 15 K using at various excitation powers in the range 80-160 mW. PL spectra show the presence of an exciton-related band emission around 0.642 eV and a band at 0.633 eV which we have related to radiative emission involving Zn-acceptors. Using the photoacoustic technique we measured the interface recombination velocities related to the interface crystalline quality, showing that the layer-substrate interface quality degrades as the Zn concentration in the layers increases

  11. Synthesis and photoluminescence properties of red-emitting Y{sub 6}WO{sub 12}:Eu{sup 3+} phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Chien, Tzu-Chin; Yang, Ji-Chun; Hwang, Chii-Shyang, E-mail: cshwang@mail.ncku.edu.tw; Yoshimura, Masahiro

    2016-08-15

    For a system of white-light-emitting diodes (WLEDs) fabricated using near-ultraviolet (UV) LED chips coated with RGB tri-color phosphors, the most important issue is enhancing the efficiency of the red phosphor. Y{sub 6}WO{sub 12}:Eu{sup 3+} phosphor is a potential material that can emit red color under near-UV excitation. This work investigated the luminescence properties of Y{sub 6}WO{sub 12}:Eu{sup 3+} under UV light excitation. The photoluminescence (PL) emission intensity of Eu{sub x}Y{sub 6–x}WO{sub 12} (x = 0.1–1.0) phosphor from the {sup 5}D{sub 0}→{sup 7}F{sub 2} transition increased with Eu{sup 3+} content until x = 0.9. For x > 0.9, the PL emission intensity decreased due to concentration quenching. The decay time of Eu{sub x}Y{sub 6–x}WO{sub 12} (x = 0.1–1.0) phosphor for the {sup 5}D{sub 0}→{sup 7}F{sub 2} transition was about 0.6–0.7 ms and did not decrease obviously, which means that there was no nonradiative energy transfer in the phosphor. The asymmetry ratio ({sup 5}D{sub 0} → {sup 7}F{sub 2}/{sup 5}D{sub 0} → {sup 7}F{sub 1}) of Eu{sub x}Y{sub 6–x}WO{sub 12} (x = 0.1–1.0) was about 2, which caused the PL emission intensity of Eu{sub x}Y{sub 6–x}WO{sub 12} (x = 0.1–1.0) phosphor from the {sup 5}D{sub 0}→{sup 7}F{sub 2} transition to be higher than that from the {sup 5}D{sub 0}→{sup 7}F{sub 1} transition. The chromaticity coordinates of the Eu{sub x}Y{sub 6–x}WO{sub 12} (x = 0.1–1.0) phosphor were close to the chromaticity coordinates of the standard red color. The Eu{sub x}Y{sub 6–x}WO{sub 12} (x = 0.9) phosphor showed the highest quantum efficiency. - Highlights: • Eu{sub x}Y{sub 6–x}WO{sub 12} (x = 0.1–1.0) phosphors were synthesized via a solid-state reaction. • Strongest excitation peaks observed at 392 nm (near UV) and 463 nm (blue). • The major emission peak of the red phosphor excited by 392 nm was at 605 nm. • The quantum efficiency of Eu{sub x}Y{sub 6–x}WO{sub 12} (x = 0.1–1.0) phosphors

  12. Crystal structure, energy transfer and tunable luminescence properties of Ca8ZnCe(PO4)7:Eu2+,Mn2+ phosphor

    Science.gov (United States)

    Ding, Chong; Tang, Wanjun

    2018-02-01

    Single-phased Ca8ZnCe(PO4)7:Eu2+,Mn2+ phosphors with whitlockite-type structure have been prepared via the combustion-assisted synthesis technique. The XRD pattern show that the as-obtained phosphors crystallize in a trigonal phase with space group of R-3c (161). Ca8ZnCe(PO4)7 host is full of sensitizers (Ce3+) and the Ce3+ emission at different lattice sites has been discussed. The efficient energy transfers from Ce3+ ions to Eu2+/Mn2+ ions and from Eu2+ to Mn2+ have been validated. Under UV excitation, the emitting color of Ca8ZnCe(PO4)7:Eu2+/Mn2+ samples can be modulated from violet blue to green and from violet blue to red-orange by the energy transfers of Ce3+→Eu2+ and Ce3+→Mn2+, respectively. Additionally, white emission has been obtained through adjusting the relative concentrations of Eu2+ and Mn2+ ions in the Ca8ZnCe(PO4)7 host under UV excitation. These results indicate that as-prepared Ca8ZnCe(PO4)7:Eu2+,Mn2+ may be a potential candidate as color-tunable white light-emitting phosphors.

  13. Thermoelectric Properties of SnO2 Ceramics Doped with Sb and Zn

    DEFF Research Database (Denmark)

    Yanagiya, S.; Van Nong, Ngo; Xu, Jianxiao Jackie

    2011-01-01

    Polycrystalline SnO2-based samples (Sn0.97−x Sb0.03Zn x O2, x = 0, 0.01, 0.03) were prepared by solid-state reactions. The thermoelectric properties of SnO2 doped with Sb and Zn were investigated from 300 K to 1100 K. X-ray diffraction (XRD) analysis revealed all XRD peaks of all the samples...

  14. Cross-section imaging and p-type doping assessment of ZnO/ZnO:Sb core-shell nanowires by scanning capacitance microscopy and scanning spreading resistance microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lin, E-mail: lin.wang@insa-lyon.fr; Brémond, Georges [Institut des Nanotechnologies de Lyon (INL), Université de Lyon, CNRS UMR 5270, INSA Lyon, Bat. Blaise Pascal, 7 Avenue, Jean Capelle, 69621 Villeurbanne (France); Sallet, Vincent; Sartel, Corinne [Groupe d' étude de la Matière Condensée (GEMaC), CNRS - Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats-Unis, 78035 Versailles (France)

    2016-08-29

    ZnO/ZnO:Sb core-shell structured nanowires (NWs) were grown by the metal organic chemical vapor deposition method where the shell was doped with antimony (Sb) in an attempt to achieve ZnO p-type conduction. To directly investigate the Sb doping effect in ZnO, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were performed on the NWs' cross-sections mapping their two dimensional (2D) local electrical properties. Although no direct p-type inversion in ZnO was revealed, a lower net electron concentration was pointed out for the Sb-doped ZnO shell layer with respect to the non-intentionally doped ZnO core, indicating an evident compensating effect as a result of the Sb incorporation, which can be ascribed to the formation of Sb-related acceptors. The results demonstrate SCM/SSRM investigation being a direct and effective approach for characterizing radial semiconductor one-dimensional (1D) structures and, particularly, for the doping study on the ZnO nanomaterial towards its p-type realization.

  15. Properties of the ZnSe/ZnTe heterojunction prepared by a multi-source evaporation of ZnTe:Sb on ZnSe single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Romeo, N [Parma Univ. (Italy). Ist. di Fisica; First, F [Uniwersytet Mikolaja Kopernika, Torun (Poland). Inst. Fizyki; Seuret, D [Universidad de La Habana, (Cuba). Facultad de Fisica-Matematica

    1979-07-16

    A new method of preparation is described of a ZnSe/ZnTe heterojunction in which Sb-doped ZnTe is deposited by a multi-source apparatus on ZnSe monocrystals. The properties of the heterojunction was studied, esp. the I-U characteristic, the 1/C/sup 2/ plot as a function of applied voltage, the photocurrent spectrum, and the electroluminescence spectrum.

  16. Luminescence of Eu:Y3Al5O12, Eu:Lu3Al5O12, and Eu:GdAlO3 Nanocrystals Synthesized by Solution Combustion

    Science.gov (United States)

    Vilejshikova, E. V.; Khort, A. A.; Podbolotov, K. B.; Loiko, P. A.; Shimanski, V. I.; Shashkov, S. N.; Yumashev, K. V.

    2017-11-01

    Nanocrystals of rare-earth garnets Y3Al5O12 and Lu3Al5O12 and perovskite GdAlO3 highly doped (10-20 at%) with Eu3+ are synthesized by the solution combustion technique and subsequent annealing in air at 800 and 1300oC. Their structure, morphology, and phase composition are studied. These materials exhibit intense red luminescence under UV excitation. Eu:GdAlO3 luminescence has CIE 1931 color coordinates (0.632, 0.368); dominant wavelength, 599.6 nm; and color purity, >99%. Judd-Ofelt parameters, luminescence branching ratios, and lifetimes of the Eu3+ 5D0 state are determined. The luminescence quantum yield for Eu:GdAlO3 (10 at%) reaches 74% with a lifetime of 1.4 ms for the 5D0 state. The synthesized materials are promising for red ceramic phosphors.

  17. Efficient and thermally stable red luminescence from nano-sized phosphor of Gd6MoO12:Eu3+

    International Nuclear Information System (INIS)

    Qin, Lin; Wei, Donglei; Huang, Yanlin; Kim, Sun Il; Yu, Young Moon; Seo, Hyo Jin

    2013-01-01

    A novel red-emitting nano-phosphor of Eu 3+ -doped Gd 6 MoO 12 was successfully synthesized by the Pechini method. The crystalline phase was confirmed by X-ray powder diffraction analysis. The morphology of the nano-phosphor was analyzed by scanning electron microscopy, indicating a good crystallization with particles smaller than 500 nm. The luminescence properties such as photoluminescence spectra and decay curves were investigated. The phosphors can be efficiently excited by near-ultraviolet (near-UV) light and exhibit a bright red luminescence around 613 nm ascribed to the forced electric dipole transition 5 D 0 → 7 F 2 of Eu 3+ ions. The thermal stabilities were investigated from the temperature-dependent luminescence decay curves (lifetimes) and spectra intensities. The luminescence properties in relation to applications in white light-emitting diodes (W-LEDs) such as the absolute luminescence quantum efficiency, excitation wavelength, and color coordinates were discussed. The Gd 6 MoO 12 :Eu 3+ nano-phosphor is a promising red-emitting candidate for the fabrication of W-LEDs with near-UV chips

  18. Preparation, optical properties of ZnO, ZnO:Al nanorods and Y(OH){sub 3}:Eu nanotube

    Energy Technology Data Exchange (ETDEWEB)

    Tran Kim Anh; Dinh Xuan Loc; Lam thi Kieu Giang; Le Quoc Minh [Institute of Materials Science, Vietnamese Academy of Science and Technology 18 Hoang Quoc Viet, Nghia Do, Cau Giay, Hanoi (Viet Nam); Strek, Wieslaw [Institute of Low Temperature and Structure Research, PAN, 2 Okolna, Wroclaw (Poland)], E-mail: kimanh1949@gmail.com

    2009-01-01

    ZnO, ZnO:Al nanorods and Y(OH){sub 3} nanotubes have been prepared by the chemical vapor deposition and liquid phase synthesis. ZnO nanorods with diameter of 50 - 100 nm and length of 5 {mu}m have been obtained by the CVD method. ZnO:Al nanorods were synthesized by the hydrothermal method from ZnSO{sub 4.} and Al{sub 2}(SO{sub 4}){sub 3}. Nanorods and nanotubes of Y(OH){sub 3} with diameter of 200 nm and length of several micrometers were prepared by the soft template method. The crystal structure and morphology of rods and tubes were analyzed by the X-Ray diffraction and FE-SEM. The influence of fabrication conditions and Al, Eu concentration have been discussed.

  19. Structural and physical properties of Mg3-xZnxSb2 (x=0-1.34)

    International Nuclear Information System (INIS)

    Ahmadpour, Faraz; Kolodiazhnyi, Taras; Mozharivskyj, Yurij

    2007-01-01

    The Mg 3-x Zn x Sb 2 phases with x=0-1.34 were prepared by direct reactions of the elements in tantalum tubes. According to the X-ray single crystal and powder diffraction, the Mg 3-x Zn x Sb 2 phases crystallize in the same P3-bar m1 space group as the parent Mg 3 Sb 2 phase. The Mg 3-x Zn x Sb 2 structure is different from the other substituted structures of Mg 3 Sb 2 , such as (Ca, Sr, Ba) Mg 2 Sb 2 or Mg 5.23 Sm 0.77 Sb 4 , in a way that in Mg 3-x Zn x Sb 2 the Mg atoms on the tetrahedral sites are replaced, while in the other structures Mg on the octahedral sites is replaced. Thermoelectric performance for the two members of the series, Mg 3 Sb 2 and Mg 2.36 Zn 0.64 Sb 2 , was evaluated from low to room temperatures through resistivity, Seebeck coefficient and thermal conductivity measurements. In contrast to Mg 3 Sb 2 which is a semiconductor, Mg 2.36 Zn 0.64 Sb 2 is metallic and exhibits an 18-times larger dimensionless figure-of-merit, ZT, at room temperature. However, thermoelectric performance of Mg 2.36 Zn 0.64 Sb 2 is still poor and it is mostly due to its large electrical resistivity. - Graphical abstract: The Mg atoms in Mg 3 Sb 2 were successfully substituted with Zn, with Zn going exclusively into the tetrahedral sites. Zn substitution increases the electrical conductivity in Mg 2.36 Zn 0.64 Sb 2 by closing the band gap. This change combined with a decrease in the thermal conductivity improves the ZT value

  20. Grain boundary engineering with nano-scale InSb producing high performance InxCeyCo4Sb12+z skutterudite thermoelectrics

    Directory of Open Access Journals (Sweden)

    Han Li

    2017-12-01

    Full Text Available Thermoelectric semiconductors based on CoSb3 hold the best promise for recovering industrial or automotive waste heat because of their high efficiency and relatively abundant, lead-free constituent elements. However, higher efficiency is needed before thermoelectrics reach economic viability for widespread use. In this study, n-type InxCeyCo4Sb12+z skutterudites with high thermoelectric performance are produced by combining several phonon scattering mechanisms in a panoscopic synthesis. Using melt spinning followed by spark plasma sintering (MS-SPS, bulk InxCeyCo4Sb12+z alloys are formed with grain boundaries decorated with nano-phase of InSb. The skutterudite matrix has grains on a scale of 100–200 nm and the InSb nano-phase with a typical size of 5–15 nm is evenly dispersed at the grain boundaries of the skutterudite matrix. Coupled with the presence of defects on the Sb sublattice, this multi-scale nanometer structure is exceptionally effective in scattering phonons and, therefore, InxCeyCo4Sb12/InSb nano-composites have very low lattice thermal conductivity and high zT values reaching in excess of 1.5 at 800 K.

  1. Synthesis and luminescent properties of two different Y{sub 2}WO{sub 6}:Eu{sup 3+} phosphor phases

    Energy Technology Data Exchange (ETDEWEB)

    Llanos, Jaime, E-mail: jllanos@ucn.cl [Departamento de Química, Universidad Católica del Norte, Avda. Angamos 0610, Antofagasta (Chile); Olivares, Douglas [Departamento de Química, Universidad Católica del Norte, Avda. Angamos 0610, Antofagasta (Chile); Manríquez, Víctor; Espinoza, Darío [Departamento de Química, Universidad de Chile, Las Palmeras 3425, Santiago (Chile); Brito, Ivan [Departamento de Química, Universidad de Antofagasta, Campus Coloso, Antofagasta (Chile)

    2015-04-15

    Highlights: • Synthesis of two phases Y{sub 2−x}Eu{sub x}WO{sub 6}. One of them crystallizes as Aurivillius phase. • Optical properties of the phosphors Y{sub 2}WO{sub 6}:Eu{sup 3+} (monoclinic and orthorhombic phases). • The orthorhombic phase was prepared via low-temperature combustion synthesis method. - Abstract: In this paper, two different Y{sub 2−x}Eu{sub x}WO{sub 6} phases were synthesized. The monoclinic phase was prepared via a conventional solid-state reaction, whereas the orthorhombic phase was obtained via a facile, low-temperature combustion synthesis method. X-ray diffraction (XRD), scanning electron microscopy (SEM), differential scanning calorimetry (DSC), and photoluminescence (PL) spectroscopy were used to characterize the resulting phosphors. The XRD results indicate the orthorhombic phase crystallized isostructurally with the Aurivillius Bi{sub 2}WO{sub 6} phase, whereas the other polymorph crystallized isostructurally with Yb{sub 2}WO{sub 6} in the monoclinic system. The SEM studies revealed both phases had a strong tendency to form agglomerates averaging nanometers in size. The photoluminescence emission spectra confirmed all of the samples were efficiently excited by near UV light and were dominated by the electric dipole transition {sup 5}D{sub 0} → {sup 7}F{sub 2}. The orthorhombic Y{sub 2−x}Eu{sub x}WO{sub 6} excitation spectrum possessed a broad band across the entire UV region (220–400 nm); therefore, Y{sub 1.86}Eu{sub 0.14}WO{sub 6} could be considered an efficient spectral converter material for use in dye-sensitized solar cells.

  2. Structural and photoluminescence properties of aligned Sb-doped ZnO nanocolumns synthesized by the hydrothermal method

    Energy Technology Data Exchange (ETDEWEB)

    Fang Xuan [School of Science, Changchun University of Science and Technology, 7089-WeiXing Road, Changchun, 130022 (China); Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone Changchun, 130033 (China); Li Jinhua [School of Science, Changchun University of Science and Technology, 7089-WeiXing Road, Changchun, 130022 (China); Zhao Dongxu, E-mail: dxzhao2000@yahoo.com.c [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone Changchun, 130033 (China); Li Binghui; Zhang Zhenzhong; Shen Dezhen [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone Changchun, 130033 (China); Wang Xiaohua; Wei Zhipeng [School of Science, Changchun University of Science and Technology, 7089-WeiXing Road, Changchun, 130022 (China)

    2010-08-02

    Aligned Sb-doped ZnO nanocolumns were synthesized by a simple hydrothermal method. Based on the analyses of the X-ray diffraction and photoluminescence result, it could be confirmed that the Sb has successfully doped in the ZnO crystal lattices to form an accepter energy level. At 85 K, the recombination of the acceptor-bound exciton was predominant in PL spectrum, which was attributed to the transition of the (Sb{sub Zn}-2V{sub Zn}) complex bound exciton. The acceptor binding energy had been calculated to be 123 meV.

  3. Structural and photoluminescence properties of aligned Sb-doped ZnO nanocolumns synthesized by the hydrothermal method

    International Nuclear Information System (INIS)

    Fang Xuan; Li Jinhua; Zhao Dongxu; Li Binghui; Zhang Zhenzhong; Shen Dezhen; Wang Xiaohua; Wei Zhipeng

    2010-01-01

    Aligned Sb-doped ZnO nanocolumns were synthesized by a simple hydrothermal method. Based on the analyses of the X-ray diffraction and photoluminescence result, it could be confirmed that the Sb has successfully doped in the ZnO crystal lattices to form an accepter energy level. At 85 K, the recombination of the acceptor-bound exciton was predominant in PL spectrum, which was attributed to the transition of the (Sb Zn -2V Zn ) complex bound exciton. The acceptor binding energy had been calculated to be 123 meV.

  4. Synthesis and photoluminescence properties of microcrystalline Sr{sub 2}ZnWO{sub 6}:RE{sup 3+} (RE = Eu, Dy, Sm and Pr) phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Dabre, K.V. [Department of Physics, Arts, Commerce and Science College, Koradi, Nagpur 441111 (India); Park, K. [Faculty of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 143-747 (Korea, Republic of); Dhoble, S.J., E-mail: sjdhoble@rediffmail.com [Department of Physics, R.T.M. Nagpur University, Nagpur 440033 (India)

    2014-12-25

    Graphical abstract: CIE chromaticity coordinate diagram (1931) indicating different colors of Sr{sub 2}ZnWO{sub 6}:RE{sup 3+} (RE = Eu (a), Dy (b and c), Sm (d–f) and Pr (g and h)) phosphor under different excitation 466 nm (a), 312 nm (b), 454 nm (c), 313 nm (d), 408 nm (e), 482 nm (f), 315 nm (g) and 450 nm (h). - Highlights: • Microcrystalline Sr{sub 2}ZnWO{sub 6}:RE{sup 3+} (RE = Eu, Dy, Sm and Pr) phosphors were synthesized by solid state method. • Photoluminescence properties of phosphor were investigated. • Color of the phosphor for different excitation has been verified by chromaticity diagram. • The host absorption and energy transfer were investigated. - Abstract: The novel microcrystalline Sr{sub 2}ZnWO{sub 6}:RE{sup 3+} (RE = Eu, Dy, Sm and Pr) phosphors were synthesized by solid-state reaction method at 1250 °C and their photoluminescence properties were investigated. The Eu{sup 3+} and Dy{sup 3+} activated phosphors show intense red (616 nm) and yellow (574 nm) emission respectively; which indicate that the rare earth ions are substituted at non-centrosymmetric site in the host lattice. Near white (Dy{sup 3+}) and reddish-orange (Sm{sup 3+}) emissions of rare earth ions in the host lattice show strong host absorption and energy transfer from the host to activator ion. Pr{sup 3+} activated phosphor shows a series of emission peaks in the visible region with the most intense peak in the blue region at 491 and 499 nm.

  5. Effect of laser irradiation on Ag4In12Sb56Te28

    Science.gov (United States)

    Chinnusamy, Rangasami

    2018-04-01

    Ag4In12Sb56Te28 has been synthesized by melt-quench method. Phase homogeneity, crystal structure and effect of laser irradiation have been investigated using X-ray diffraction (XRD) and Raman spectroscopy. Rietveld refinement of crystal structure revealed that Ag4In12Sb56Te28 is a multiphase system with AgIn3Te5, Sb8Te3 and Sb phases. Combined optical microscopy and Raman spectroscopy have been used to understand the distribution of different phases on the surface of the samples, which substantiated the results of Rietveld analysis. Interaction of 20 mW laser beam with samples has been investigated using Raman measurements. The results have shown that regions with large phase fraction of AgIn3Te5 become amorphous during laser-sample interaction, but the starting phase remains nearly same after the interaction. Regions with AgIn3Te5 and nearly equal or larger amount of Sb8Te3 have shown significant growth of α-Sb2O3 during and after laser-sample interaction. Regions rich in Sb have shown formation of AgIn3Te5 and growth of α-Sb2O3 during and after interaction. These observations have been explained based on the maximum temperature rise at different regions during laser-sample interaction.

  6. Surface modification of ZnAl{sub 1.9}Eu{sub 0.05}O{sub 4} aiming to obtaining ZnAl{sub 1.9}Eu{sub 0.05}O{sub 4}/SiO{sub 2} hybrid for use as a biosensor; Modificacao da superficie do ZnAl{sub 1.9}Eu{sub 0.05}O{sub 4} visando a obtencao do hibrido ZnAl{sub 1.9}Eu{sub 0.05}O{sub 4}/SiO{sub 2} para aplicacao como biossensor

    Energy Technology Data Exchange (ETDEWEB)

    Araujo, P.M.A.G.; Santos, P.T.A.; Costa, A.C.F.M., E-mail: pascally.guerra@gmail.com, E-mail: polyanaquimica@yahoo.com.br, E-mail: ana.costa@ufcg.edu.br [Universidade Federal de Campina Grande (UFCG), PB (Brazil); Junior, S.A.; Viana, R. S., E-mail: salvesjr@ufpe.br, E-mail: rodrigosilva.viana@yahoo.com.br [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil)

    2017-01-15

    This study aimed to investigate the influence of surface modification of ZnAl{sub 1.9}Eu{sub 0.05}O{sub 4} nanoparticles for obtaining hybrid ZnAl{sub 1.9}Eu{sub 0.05}O{sub 4}/SiO{sub 2} for application as a biosensor. Initially ZnAl{sub 1.9}Eu{sub 0.05}O{sub 4} nanoparticles were synthesized by combustion reaction and, subsequently, their surfaces were modified with silane agent. The samples were characterized by X-ray diffraction, scanning electron microscopy (SEM), Fourier transform infrared (FTIR) spectroscopy, and excitation and emission spectroscopy. The results showed formation of ZnAl{sub 2}O{sub 4} as the major phase. By SEM, hard agglomerates, irregularly shaped in the form of plaques, with the presence of few irregular and variables pores were observed. The surface modification was confirmed by FTIR through the silanol and siloxane groups. The excitation and emission spectra revealed the presence of a broadband of ZnAl{sub 2} O{sub 4} matrix, and fine and intense transitions from europium ion arising from doping of non-stoichiometric ZnAl{sub 2}O{sub 4} with the europium. From the results of emission and excitation, it was observed that the luminescence of ZnAl{sub 1.9}Eu{sub 0.05}O{sub 4}/SiO{sub 2} hybrid presented a small decrease in relation to the ZnAl{sub 1.9}Eu0.0{sub 5}O{sub 4} nanoparticles. This decrease was almost insignificant in relation to the benefits of silanization caused by the introduction of functional groups that promote combination of hybrid ZnAl{sub 1.9}Eu{sub 0.05}O{sub 4}/SiO{sub 2} with biomolecules, being this promising for application as a biosensor used in the biomedical field for the diagnosis and treatment of diseases. (author)

  7. Density functional simulations of Sb-rich GeSbTe phase change alloys

    International Nuclear Information System (INIS)

    Gabardi, S; Bernasconi, M; Caravati, S; Parrinello, M

    2012-01-01

    We generated models of the amorphous phase of Sb-rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge 1 Sb 1 Te 1 and Ge 2 Sb 4 Te 5 . Comparison with previous results on the most studied Ge 2 Sb 2 Te 5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high frequencies above 200 cm -1 are localized in tetrahedra around Ge atoms in Sb-rich compounds as well as in Ge 2 Sb 2 Te 5 . All compounds are semiconducting in the amorphous phase, with a band gap in the range 0.7-1.0 eV.

  8. Density functional simulations of Sb-rich GeSbTe phase change alloys

    Science.gov (United States)

    Gabardi, S.; Caravati, S.; Bernasconi, M.; Parrinello, M.

    2012-09-01

    We generated models of the amorphous phase of Sb-rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge1Sb1Te1 and Ge2Sb4Te5. Comparison with previous results on the most studied Ge2Sb2Te5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high frequencies above 200 cm-1 are localized in tetrahedra around Ge atoms in Sb-rich compounds as well as in Ge2Sb2Te5. All compounds are semiconducting in the amorphous phase, with a band gap in the range 0.7-1.0 eV.

  9. Structural phase transitions of NaV6O11 and SrV6O11

    International Nuclear Information System (INIS)

    Kanke, Yasushi; Izumi, Fujio; Kato, Katsuo; Morii, Yukio; Funahashi, Satoru; Akiba, Etsuo.

    1993-01-01

    Crystal structures of NaV 6 O 11 at several temperatures were studied by either Rietveld analyses of both neutron and X-ray powder diffraction data, or an analysis of X-ray single crystal diffraction data. At 200 K, NaV 6 O 11 loses the center of symmetry, and its space group changes from P6 3 /mmc to P6 3 mc. Consequently, V(2) splits into two sites. At 30 K, NaV 6 O 11 was transformed from the hexagonal form to the orthorhombic one (Cmc2 1 ), and V(1) splits into two sites. These results indicate that magnetic phase transitions of NaV 6 O 11 at 245 K and 64.2 K are accompanied by structural phase transitions. On the other hand, no structural phase transition was detected in SrV 6 O 11 . (author)

  10. Stress-Induced Crystallization of Ge-Doped Sb Phase-Change Thin Films

    NARCIS (Netherlands)

    Eising, Gert; Pauza, Andrew; Kooi, Bart J.

    The large effects of moderate stresses on the crystal growth rate in Ge-doped Sb phase-change thin films are demonstrated using direct optical imaging. For Ge6Sb94 and Ge7Sb93 phase-change films, a large increase in crystallization temperature is found when using a polycarbonate substrate instead of

  11. On Some Physical Properties of GeSe3-Sb2Se3-ZnSe Thin Films and Their Radiation Response

    International Nuclear Information System (INIS)

    Hosni, H.M.M.A.

    2010-01-01

    Thin films of the chalcogenides GeSe 3 , Sb 2 Se 3 , ZnSe, (GeSe 3 )80(Sb 2 Se 3 )20 and (GeSe 3 )70(Sb 2 Se 3 )10(ZnSe)20, are prepared by thermal evaporation onto glass substrates. The effect of ZnSe incorporation with both GeSe 3 , Sb 2 Se 3 results in amorphous (GeSe 3 )70(Sb 2 Se 3 )10(ZnSe)20 composition as obtained from the X-ray analysis. Electrical measurements reveal a decrease in dc activation energy, ΔEdc, and an increase in ac activation energy, ΔEac, for (GeSe 3 )70(Sb 2 Se 3 )10(ZnSe)20 as compared with (GeSe 3 )80(Sb 2 Se 3 )20. Optical energy gap, Eg, and band tail width, Ee, are estimated in UV/VIS spectral region for fresh and γ-irradiated films, revealing a decrease in Eg and an increase in Ee for ZnSe and (GeSe 3 )70(Sb 2 Se 3 )10(ZnSe)20 compositions, with irradiation dose.

  12. Density functional simulations of Sb-rich GeSbTe phase change alloys

    OpenAIRE

    Gabardi, S; Caravati, S; Bernasconi, M; Parrinello, M

    2012-01-01

    We generated models of the amorphous phase of Sb rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge 1Sb 1Te 1 and Ge 2Sb 4Te 5. Comparison with previous results on the most studied Ge 2Sb 2Te 5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high fr...

  13. Complex cubic metallides AM{sub ∝6} (A=Ca, Sr; M=Zn, Cd, Hg). Synthesis, crystal chemistry and chemical bonding

    Energy Technology Data Exchange (ETDEWEB)

    Schwarz, Michael; Wendorff, Marco; Roehr, Caroline [Freiburg Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

    2017-09-01

    In a systematic synthetic, crystallographic and bond theoretical study, the stability ranges as well as the distribution of the isoelectronic late d-block elements Zn, Cd and Hg (M) in the polyanions of the YCd{sub 6}-type phases (Ca/Sr)Cd{sub 6} have been investigated. Starting from Ca(Cd/Hg){sub 6}, 12-30% of the M atoms can be substituted by Zn, which gradually occupies the center of the empty cubes. In all ternary compounds, smaller/less electronegative Zn/Cd atoms occupy the disordered tetrahedra explaining the lack of the YCd{sub 6}-type for pure mercurides. Along the section SrCd{sub 6}-SrHg{sub 6}, the ordered Eu{sub 4}Cd{sub 25}-type is formed (Sr{sub 4}Cd{sub 16.1}Hg{sub 8.9}: cF1392, Fd anti 3, a=3191.93(5) pm, R1=0.0404). Besides, two new complex cubic Ca phases appear at increased Zn proportion: Ca{sub 2}Zn{sub 5.1}Cd{sub 5.8}, which exhibits a nearly complete site preference of Zn and Cd, crystallizes in the rare cubic Mg{sub 2}Zn{sub 11}-type structure (cP39-δ, Pm anti 3, a=918.1(1) pm, R1=0.0349). In the Ca-Hg system, an increased Zn proportion yielded the new compound CaZn{sub 1.31}Hg{sub 3.69} (cF480, F anti 43m, a=2145.43(9) pm, R1=0.0572), with a complex cubic structure closely related to Ba{sub 20}Hg{sub 103}. All structures, which are commonly described using nested polyhedra around high-symmetric sites, are alternatively described in accordance with the calculated electron densities and charge distribution: building blocks are face-sharing [M{sub 4}] tetrahedra (star polyhedra such as TS, IS, OS), each with a cage-critical point in its center, and [M{sub 8}] cubes (deformed TS), which are either empty, distorted or filled. The M element distribution in the anion is determined by size criteria and the difference in electronegativity, which induces a preferred formation of heteroatomic polar bonds.

  14. Structural and spectroscopic diagnosis of Eu:ZnO and Eu:Yb:ZnO glass and ceramics.

    Science.gov (United States)

    Bahadur, A; Dwivedi, Y; Rai, S B

    2012-06-01

    Eu and Eu:Yb codoped ZnO nanocrystals embedded in B(2)O(3) glass matrix were synthesized and their structural, optical properties were discussed. On excitation with 532 nm laser radiation intense orange/red emissions from Eu(3+) ions were observed. The fluorescence intensity was found to enhance on annealing. Frequency upconversion emissions from Eu(3+) ions were observed in presence of Yb(3+) ions on excitation with NIR (976 nm) laser. The enhancement in emission intensity was explained and the photo-physics involved is linked with the unique structural properties of the crystallites formed. Ion interactions and the different energy transfer parameters were also calculated. Copyright © 2012 Elsevier B.V. All rights reserved.

  15. Radiosynthesis of [11C]SB-705498, a selective transient receptor potential Vanilloid 1 (TRPV1) receptor antagonist

    International Nuclear Information System (INIS)

    Dolle, F.; Bramoulle, Y.; Deverre, J.R.; Bottlaender, M.; Passchier, J.

    2011-01-01

    Complete text of publication follows: Objectives: The transient receptor potential vanilloid 1 (TRPV1) receptor, previously known as the vanilloid receptor 1 (VR1), is a non-selective cation channel activated by a range of noxious stimuli and highly expressed in nociceptive fibres. TRPV1 receptor is involved in pain and sensitisation associated with tissue injury and inflammation and therefore represents a pharmacological target of choice for the development of novel therapeutic agents for the treatment of chronic pain, migraine and gastrointestinal disorders. Among a novel series of pyrrolidinyl ureas recently discovered by GSK, SB-705498 (1, namely 1-(2-bromophenyl)-3-[(R)-1-(5- trifluoromethylpyridin-2-yl)pyrrolidin-3-yl]urea) has been identified as a potent, selective and orally bioavailable TRPV1 antagonist and considered for positron emission tomography studies. SB-705498 (1) has therefore been isotopically labelled with the short-lived positron-emitter carbon-11 (t1/2: 20.38 min) at its urea site using [ 11 C]phosgene in a one-pot two-step process, via the intermediate preparation of 2-bromophenyl [ 11 C]isocyanate. Methods: Carbon-11-labeling of SB-705498 comprises: (A) Trapping of [ 11 C]phosgene (radio-synthesized from cyclotron-produced [ 11 C]methane via [ 11 C]carbon tetrachloride using minor modifications of published processes) at room temperature for 1 to 2 minutes in 250 μL of acetonitrile containing 0.6 μmole of 2-bromoaniline (2) giving 2-bromophenyl [ 11 C]isocyanate ([ 11 C]-3), followed by (B) addition of an excess of chiral (R)-1-(5- trifluoromethylpyridin-2-yl)pyrrolidin-3-ylamine (4, 40 μmoles in 500 μL of acetonitrile) as the second amine and reaction at room temperature for an additional one minute giving the desired urea derivative ([ 11 C]SB-705498 ([ 11 C]-1)), (C) dilution of the crude reaction mixture with water (500 μL) containing 4% (v:v) of DEA, injection and purification on a semi-preparative Waters Symmetry R C18 HPLC

  16. Three new superconducting members of the family of tetramethyltetraselenafulvalene (TMTSF) salts: TMTSF2Cl04, TMTSF2SbF6, TMTSF2TaF6

    International Nuclear Information System (INIS)

    Parkin, S.S.P.; Ribault, M.; Jerome, D.; Bechgaard, K.

    1981-01-01

    Resistivity against temperature measurements are reported along the high-conductivity a axis of TMTSF 2 ClO 4 , TMTSF 2 SbF 6 and TMTSF 2 TaF 6 , under pressure and as a function of applied magnetic field, that show that all three compounds exhibit superconducting phase transitions near 1 K, when sufficient pressure is applied. TMTSF 2 SbF 6 and TMTSF 2 TaF 6 become superconducting above critical pressures of the order of 10 and 11 kbar respectively whereas a superconducting phase transition in TMTSF 2 ClO 4 is observed at much lower pressures (<3 kbar). The critical pressure above which the sc phase is stabilised can be correlated with the separation between the sheets of TMTSF molecules and anions. (author)

  17. Synthesis and luminescent properties of Sr{sub 2}Gd{sub 6.8}Eu{sub 1.2}Si{sub 6(1−x)}P{sub 6x}O{sub 26} oxyapatites

    Energy Technology Data Exchange (ETDEWEB)

    Ishchenko, A.V., E-mail: a-v-i@mail.ru [Ural Federal University, 620002 Ekaterinburg (Russian Federation); Zuev, M.G. [Ural Federal University, 620002 Ekaterinburg (Russian Federation); Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, 620990 Ekaterinburg (Russian Federation); Vasin, A.A. [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, 620990 Ekaterinburg (Russian Federation); Yagodin, V.V.; Viktorov, L.V.; Shulgin, B.V. [Ural Federal University, 620002 Ekaterinburg (Russian Federation)

    2016-01-15

    The solid solutions Sr{sub 2}Gd{sub 6.8}Eu{sub 1.2}Si{sub 6(1−x)}P{sub 6x}O{sub 26−δ} (where x=0–0.15 and δ is oxygen nonstoichiometry) were synthesized. The structural properties of the crystal lattice of the solid solutions and the peculiarities of Eu{sup 3+} and P{sup 5+} dopants substitution for matrix ions have been considered. The photo-, X-ray and pulsed cathode luminescence properties have been studied. It has been found that substitution of (SiO{sub 4}){sup 4−} by (PO{sub 4}){sup 3−} tetrahedron in Eu{sup 3+}-doped oxyapatites does not bring significant changes to bands structure Eu{sup 3+} in luminescence spectra under different excitation (UV, X-ray, pulse cathode beam). However, the increase of P{sup 5+} concentration in Sr{sub 2}Gd{sub 6.8}Eu{sub 1.2}Si{sub 6(1−x)}P{sub 6x}O{sub 26–δ} compounds leads to a decrease of integral intensity of Eu{sup 3+} luminescence bands due to local environment symmetry modifications and covalency degree changes. Two nonequivalent optical Eu{sup 3+} centers have been found. These compounds are of interest for efficient X-ray phosphors, display devices and LED engineering material creation. - Highlights: • The luminescence properties were studied upon UV, X-ray and pulse cathode beam. • P{sup 5+} doping of Sr{sub 2}Gd{sub 6.8}Eu{sub 1.2}Si{sub 6}O{sub 26} leads to luminescence intensity reduction. • At least two types of optical centers formed by Eu{sup 3+} ions were found. • The structural features of Sr{sub 2}Gd{sub 6.8}Eu{sub 1.2}Si{sub 6(1−x)}P{sub 6x}O{sub 26} were reported. • Partial replacement of Si by P does not change the Sr{sub 2}Gd{sub 6.8}Eu{sub 1.2}Si{sub 6}O{sub 26} structure.

  18. Dependence of photoluminescence (PL) emission intensity on Eu3+ and ZnO concentrations in Y2O3:Eu3+ and ZnO·Y2O3:Eu3+ nanophosphors

    CSIR Research Space (South Africa)

    Mhlongo, GH

    2011-08-01

    Full Text Available Y2O3:Eu3+ and ZnO·Y2O3:Eu3+ nanophosphor powders with different concentrations of Eu3+ ions were synthesized by a sol–gel method and their luminescence properties were investigated. The red photoluminescence (PL) from Eu3+ ions with the main...

  19. Preparation and oxidation resistance of single crystalline β-Zn{sub 4}Sb{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Hong-xia; Deng, Shu-ping [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500 (China); Li, De-cong [Photoelectric Engineering College, Yunnan Open University, Kunming 650500 (China); Shen, Lan-xian; Cheng, Feng; Wang, Jin-song [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500 (China); Deng, Shu-kang, E-mail: skdeng@126.com [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500 (China)

    2016-11-01

    This study prepared a Zn-rich single crystal β-Zn{sub 4}Sb{sub 3} using a Sn flux method based on the stoichiometric ratios of Zn{sub 4.4}Sb{sub 3}Sn{sub 3}. The oxidation resistance of the sample was determined by exploring the effects of heat treatment in air on electrical transport properties and thermal stability, which is of practical importance in the application of the material at high temperatures. Results showed that the prepared sample possessed high electrical transport properties, with a high power factor of 1.67×10{sup −3} W m{sup −1} K{sup −2} at 563 K. The heat treatment in air weakened the electrical conductivity of the single crystalline β-Zn{sub 4}Sb{sub 3}, whereas the Seebeck coefficients were rarely independent of the annealing condition. Eventually, the power factor obtained after the first heating at 523 K for 4 h became comparable to that of the as-prepared sample, although it decreased after the second heating at 573 K for 5 h. Nevertheless, the single crystalline β-Zn{sub 4}Sb{sub 3} still possessed a good thermal stability after the heat treatment process.

  20. Shape tunable synthesis of Eu- and Sm-doped ZnO microstructures ...

    Indian Academy of Sciences (India)

    Shape tunable synthesis of Eu- and Sm-doped ZnO microstructures: a morphological ... different microstructures material at relatively low temper- ..... Chem. C 114. 2776. 5. Gao P X and Wang Z L 2003 J. Am. Chem. Soc. 125 11299. 6.

  1. Sr(1.7)Zn(0.3)CeO4: Eu3+ novel red-emitting phosphors: synthesis and photoluminescence properties.

    Science.gov (United States)

    Li, Haifeng; Zhao, Ran; Jia, Yonglei; Sun, Wenzhi; Fu, Jipeng; Jiang, Lihong; Zhang, Su; Pang, Ran; Li, Chengyu

    2014-03-12

    A series of novel red-emitting Sr1.7Zn0.3CeO4:Eu(3+) phosphors were synthesized through conventional solid-state reactions. The powder X-ray diffraction patterns and Rietveld refinement verified the similar phase of Sr1.7Zn0.3CeO4:Eu(3+) to that of Sr2CeO4. The photoluminescence spectrum exhibits that peak located at 614 nm ((5)D0-(7)F2) dominates the emission of Sr1.7Zn0.3CeO4:Eu(3+) phosphors. Because there are two regions in the excitation spectrum originating from the overlap of the Ce(4+)-O(2-) and Eu(3+)-O(2-) charge-transfer state band from 200 to 440 nm, and from the intra-4f transitions at 395 and 467 nm, the Sr1.7Zn0.3CeO4:Eu(3+) phosphors can be well excited by the near-UV light. The investigation of the concentration quenching behavior, luminescence decay curves, and lifetime implies that the dominant mechanism type leading to concentration quenching is the energy transfer among the nearest neighbor or next nearest neighbor activators. The discussion about the dependence of photoluminescence spectra on temperature shows the better thermal quenching properties of Sr1.7Zn0.3CeO4:0.3Eu(3+) than that of Sr2CeO4:Eu(3+). The experimental data indicates that Sr1.7Zn0.3CeO4:Eu(3+) phosphors have the potential as red phosphors for white light-emitting diodes.

  2. Red light emission from ZnO:Eu"3"+|CuSCN hetero-junction under cathodic polarization

    International Nuclear Information System (INIS)

    Sirimanne, P.M.; Minoura, H.

    2015-01-01

    Eu"3"+ ions were bonded to ZnO ceramic via organic ligand. Surface bonded Eu"3"+ ions were exhibited specific luminescence bands due to electron transitions between f–f intra-configurationally transitions. Further enhancement of luminescence bands was observed by attaching selected oligomers to Eu"3"+ ions. A hetero-junction was prepared by depositing copper-thiocyanate on Eu"3"+ ions bonded ZnO ceramic. Red light emission was observed from surface bonded Eu"3"+ ions in ZnO:Eu"3"+|CuSCN hetero-junction under reverse bias. - Highlights: • Europium doped ZnO ceramic exhibits photo-luminescence. • Semiconductor hetro-junction was prepared. • ZnO:Eu"3"+|CuSCN hetero-junction emits red light under reverse bias.

  3. The Cu-Sb-Se phase system at temperatures between 350 and 700 degree C

    DEFF Research Database (Denmark)

    Karup-Møller, Sven

    1999-01-01

    Phase relations were determined in the Cu-Sb-Se phase system at 300o, 400o, 450o, 500o, 600o and 700oC. Five three-component phases are present at 300oC: permingeatite (Cu3SbSe4), phase A (Cu3SbSe3, the Se-equivalent to skinnerite Cu3SbS3), phase B (CuSbSe2, the Se-equivalent to chalcostibite Cu......SbS2), phase C (Cu5.04Sb35.9Se59.1) and phase D (Cu38.8Sb6.10Se55.1). An X-ray crystallographic study is currently in progress on phase C. Phase D is present in insufficient amounts for such a study. At 400oC phase C and D does not exist and at 500oC all solid ternary phase are absent. At 450oC two...

  4. Study on the application of magnesium oxide adsorptive compound to preconcentrate trace elements (As, Cu, Co, Cr, Hg, Mn, Sb and Zn) in high salt water and neutron activation analysis

    Energy Technology Data Exchange (ETDEWEB)

    Giang, Nguyen; Tam, Nguyen Thanh; Phuong Mai, Truong Thi; Ho Tran The Huu [Center for Analytical Techniques, Nuclear Research Institute, Dalat (Viet Nam)

    2007-12-15

    The project presents preconcentration neutron activation analysis techniques for determination of trace metals (As, Co, Cr Cu, Hg, Mn, Sb and Zn) in high salt water by adsorption of trace metals on magnesium oxide. Precipitate is collected on 0.45 {mu}m membrane filters and irradiated in pneumatic rabit system and Lazy Susan facility at flux 5.10{sup 12} n/cm{sup 2}.sec for As, Cu, Mn and 2.10{sup 12} n/cm{sup 2}.sec for Hg, Sb, Cr, Co and Zn. The radioactivities of {sup 76}As, {sup 60}Co, {sup 64}Cu, {sup 51}Cr, {sup 203}Hg, {sup 56}Mn, {sup 124}Sb and {sup 65}Zn were measured. {sup 76}As, {sup 60}Co, {sup 64}Cu, {sup 51}Cr, {sup 203}Hg, {sup 56}Mn, {sup 124}Sb and {sup 65}Zn radio traces were used to establish optimum conditions and to evaluate the chemical yield. Detection limits of this method are 0.019, 0.006, 0.044, 0.058, 0.021, 0.027, 0.012 and 0.094 {mu}g of As, Co, Cr, Cu, Hg, Mn, Sb and Zn respectively. (author)

  5. Facile fabrication of core-shell Pr6O11-ZnO modified silane coatings for anti-corrosion applications

    Science.gov (United States)

    Jeeva Jothi, K.; Palanivelu, K.

    2014-01-01

    In this work, we have developed a facile and inexpensive method to fabricate anti-corrosive and hydrophobic surface with hierarchical micro and nano structures. We demonstrate for the first time the use of praseodymium oxide doped zinc oxide (Pr6O11-ZnO) nanocomposites loaded in a hybrid sol-gel (SiOx/ZrOx) layer, to effectively protect the underlying steel substrate from corrosion attack. The influence of Pr6O11-ZnO gives the surprising aspects based on active anti-corrosion and hydrophobic coatings. The spherical SiO2 particles have been successfully coated with Pr6O11-ZnO layer through sol-gel process. The resulted SiO2@Pr6O11-ZnO core-shell was characterized by Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR), Scanning Electron Microscopy (SEM), and X-ray Photoelectron Spectroscopy (XPS). The barrier properties of the intact coatings were assessed by Electrochemical Impedance Spectroscopy (EIS). The fabrication of SiO2@Pr6O11-ZnO shows dual properties of hydrophobic and anti-corrosion micro/nanostructured sol-gel coatings follows a single/simple step coating procedure. This study has led to a better understanding factor influencing the anti-corrosion performance with embedded nanocomposites. These developments are particularly for silane network@ Pr6O11-ZnO for self-healing and self-cleaning behavior which can be designed for new protective coating system.

  6. Triplet superconductivity in PrOs4Sb12

    International Nuclear Information System (INIS)

    Maki, K.; Won, H.; Parker, David; Haas, Stephan; Izawa, K.; Matsuda, Y.

    2005-01-01

    Here we propose spin triplet superconductors for the A- and B-phase in PrOs 4 Sb 12 . The present model describes consistently the thermal conductivity κ zz data obtained by Izawa et al. for T>=150mK

  7. Si-Sb-Te materials for phase change memory applications

    International Nuclear Information System (INIS)

    Rao Feng; Song Zhitang; Ren Kun; Zhou Xilin; Cheng Yan; Wu Liangcai; Liu Bo

    2011-01-01

    Si-Sb-Te materials including Te-rich Si 2 Sb 2 Te 6 and Si x Sb 2 Te 3 with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si x Sb 2 Te 3 shows better thermal stability than Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 in that Si x Sb 2 Te 3 does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si x Sb 2 Te 3 improves. The 10 years retention temperature for Si 3 Sb 2 Te 3 film is ∼ 393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si x Sb 2 Te 3 films also show improvement on thickness change upon annealing and adhesion on SiO 2 substrate compared to those of Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 films. However, the electrical performance of PCRAM cells based on Si x Sb 2 Te 3 films with x > 3.5 becomes worse in terms of stable and long-term operations. Si x Sb 2 Te 3 materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance.

  8. Synthesis and characterization of novel red emitting nanocrystal Gd6WO12:Eu3+ phosphors

    International Nuclear Information System (INIS)

    Tian Yue; Chen Baojiu; Hua Ruinian; Zhong Haiyang; Cheng Lihong; Sun Jiashi; Lu Weili; Wan Jing

    2009-01-01

    Novel nanosized Gd 6 WO 12 :Eu 3+ phosphors were synthesized via a co-precipitation reaction. The crystal structure and morphology of the phosphors were characterized by using X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). It was found that the resultant powders show a regular and sphere-like shape with average particle size of 60 nm. Intrinsic red emission originating from Eu 3+ was observed while excited at the W 6+ →O 2- and Eu 3+ →O 2- charge transfer bands or f-f absorption bands. The color coordinates of the phosphors were calculated to be x=0.625, y=0.375. The concentration dependence of the luminescence was studied, and optimum doping concentration for obtaining maximum emitting intensity was confirmed to be around 12 mol%. It was also found that the electric dipole-dipole interaction plays an important role for quenching luminescence of Eu 3+ .

  9. Evaluation of the effect of Bi, Sb, Sr and cooling condition on eutectic phases in an Al–Si–Cu alloy (ADC12) by in situ thermal analysis

    International Nuclear Information System (INIS)

    Farahany, S.; Ourdjini, A.; Idrsi, M.H.; Shabestari, S.G.

    2013-01-01

    Highlights: • Combined effect of Bi, Sb and Sr additions, and cooling condition was evaluated. • Two different scenarios of recalecense in response to cooling rate were observed. • Fraction solid increased in the order of Sr > Bi > Sb, corresponds to Si morphologies. • Only Bi decreased the nucleation temperature of Al 2 Cu eutectic phase. - Abstract: Al–Si and Al–Cu eutectic phases strongly affect the properties of Al–Si–Cu cast alloys. The characteristic parameters of these two eutectic phases with addition of bismuth, antimony and strontium under different cooling rates (0.6–2 °C/s) were investigated in ADC12 alloy using in situ thermal analysis. Results show that additives affect the Al–Si phase more than the Al–Cu (Al 2 Cu) phase. Addition elements showed two different scenarios in response to cooling rate in terms of recalescence of the Al–Si eutectic phase. Both Bi and Sb caused an increase in recalescence with increased cooling rate but Sr addition reduced the recalescence. Additions of Sb and Sr increased the nucleation temperature of Al 2 Cu, but addition of Bi produced an opposite effect. There seems to be relationship between the solidification temperature range and fraction solid of Al–Si and Al 2 Cu eutectic phases. As the cooling rate increases the fraction solid of Al–Si decreased and that of Al 2 Cu increased

  10. Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

    OpenAIRE

    Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

    2016-01-01

    We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-?m line width, 9-?m pitch, and 6-?m height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed...

  11. Luminescence enhancement of (Sr1-x Mx )2 SiO4 :Eu2+ phosphors with M (Ca2+ /Zn2+ ) partial substitution for white light-emitting diodes.

    Science.gov (United States)

    Wang, Yulong; Zhang, Wentao; Gao, Yang; Long, Jianping; Li, Junfeng

    2017-02-01

    Eu 2 + -doped Sr 2 SiO 4 phosphor with Ca 2 + /Zn 2 + substitution, (Sr 1-x M x ) 2 SiO 4 :Eu 2 + (M = Ca, Zn), was prepared using a high-temperature solid-state reaction method. The structure and luminescence properties of Ca 2 + /Zn 2 + partially substituted Sr 2 SiO 4 :Eu 2 + phosphors were investigated in detail. With Ca 2 + or Zn 2 + added to the silicate host, the crystal phase could be transformed between the α-form and the β-form of the Sr 2 SiO 4 structure. Under UV excitation at 367 nm, all samples exhibit a broad band emission from 420 to 680 nm due to the 4f 6 5d 1  → 4f 7 transition of Eu 2 + ions. The broad emission band consists of two peaks at 482 and 547 nm, which correspond to Eu 2 + ions occupying the ten-fold oxygen-coordinated Sr.(I) site and the nine-fold oxygen-coordinated Sr.(II) site, respectively. The luminescence properties, including the intensity and lifetime of Sr 2 SiO 4 :Eu 2 + phosphors, improved remarkably on Ca 2 + /Zn 2 + addition, and promote its application in white light-emitting diodes. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

  12. Effect of structural evolution of ZnO/HfO2 nanocrystals on Eu2+/Eu3+ emission in glass-ceramic waveguides for photonic applications.

    Science.gov (United States)

    Ghosh, Subhabrata; Bhaktha B N, Shivakiran

    2018-06-01

    Eu-doped 70SiO 2 -23HfO 2 -7ZnO (mol%) glass-ceramic waveguides have been fabricated by sol-gel method as a function of heat-treatment temperatures for on-chip blue-light emitting source applications. Structural evolution of spherical ZnO and spherical as well as rod-like HfO 2 nanocrystalline structures have been observed with heat-treatments at different temperatures. Initially, in the as-prepared samples at 900 ◦ C, both, Eu 2+ as well as Eu 3+ ions are found to be present in the ternary matrix. With controlled heat-treatments of up to 1000 ◦ C for 2 h, local environment of Eu-ions become more crystalline in nature and the reduction of Eu 3+ to Eu 2+ takes place in such ZnO/HfO 2 crystalline environments. In these ternary glass-ceramic waveguides, heat-treated at higher temperatures, the blue-light emission characteristic, which is the signature of 4f 6 5d [Formula: see text] 4f 7 energy level transition of Eu 2+ ions is found to be greatly enhanced. The as-prepared glass-ceramic waveguides exhibit a propagation loss of 0.4 ± 0.2 dB cm -1 at 632.8 nm. Though the propagation losses increase with the growth of nanocrystals, the added functionalities achieved in the optimally heat-treated Eu-doped 70SiO 2 -23HfO 2 -7ZnO (mol%) waveguides, make them a viable functional optical material for the fabrication of on-chip blue-light emitting sources for integrated optic applications.

  13. On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation

    Energy Technology Data Exchange (ETDEWEB)

    Prokofieva, L. V., E-mail: lprokofieva496@gmail.com; Konstantinov, P. P.; Shabaldin, A. A. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-06-15

    The technique for measuring the Hall coefficient and electrical conductivity in the thermal cycling mode is used to study the effect of the Sn impurity on the microstructure and properties of pressed ZnSb samples. Tin was introduced as an excess component (0.1 and 0.2 at %) and as a substitutional impurity for Zn and Sb atoms in a concentration of (2–2.5) at % The temperature dependences of the parameters of lightly doped samples are fundamentally like similar curves for ZnSb with 0.1 at % of Cu. The highest Hall concentration, 1.4 × 10{sup 19} cm{sup –3} at 300 K, is obtained upon the introduction of 0.1 at % of Sn; the dimensionless thermoelectric figure of merit attains its maximum value of 0.85 at 660 K. The experimental data are discussed under the assumption of two doping mechanisms, which are effective in different temperature ranges, with zinc vacancies playing the decisive role of acceptor centers. In two ZnSb samples with SnSb and ZnSn additives, the charge-carrier compensation effect is observed; this effect depends on temperature and markedly changes with doping type. As in p-type A{sup IV}–B{sup VI} materials with a low Sn content, hole compensation can be attributed to atomic recharging Sn{sup 2+} → Sn{sup 4+}. Types of compensating complexes are considered.

  14. Phosphor thermometry: On the synthesis and characterisation of Y{sub 3}Al{sub 5}O{sub 12}:Eu (YAG:Eu) and YAlO{sub 3}:Eu (YAP:Eu)

    Energy Technology Data Exchange (ETDEWEB)

    Kissel, T. [Fachgebiet Reaktive Strömungen und Messtechnik (RSM), Center of Smart Interfaces (CSI), Technische Universität Darmstadt, Petersenstraße 32, 64287 Darmstadt (Germany); Brübach, J., E-mail: bruebach@ekt.tu-darmstadt.de [Fachgebiet Reaktive Strömungen und Messtechnik (RSM), Center of Smart Interfaces (CSI), Technische Universität Darmstadt, Petersenstraße 32, 64287 Darmstadt (Germany); Euler, M. [Fachgebiet Reaktive Strömungen und Messtechnik (RSM), Center of Smart Interfaces (CSI), Technische Universität Darmstadt, Petersenstraße 32, 64287 Darmstadt (Germany); Frotscher, M.; Litterscheid, C.; Albert, B. [Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Petersenstraße 18, 64287 Darmstadt (Germany); Dreizler, A. [Fachgebiet Reaktive Strömungen und Messtechnik (RSM), Center of Smart Interfaces (CSI), Technische Universität Darmstadt, Petersenstraße 32, 64287 Darmstadt (Germany)

    2013-07-15

    With regard to phosphor thermometry, the materials Y{sub 3}Al{sub 5}O{sub 12}:Eu (YAG:Eu) and YAlO{sub 3}:Eu (YAP:Eu) were synthesised and characterised in order to substitute the commonly used thermographic phosphor Y{sub 2}O{sub 3}:Eu, whose temperature sensitive luminescence lifetime exhibits a strong and most often undesirable cross-sensitivity to the oxygen concentration of the surrounding gas phase. The synthesis is outlined in detail and the crystallographic structure was characterised by X-ray diffraction. In a second step, the luminescence properties following pulsed UV laser excitation were determined. In this context, the emission spectra and the temperature lifetime characteristics were monitored. For Y{sub 3}Al{sub 5}O{sub 12}:Eu and YAlO{sub 3}:Eu, temperature sensitive ranges of 1000 K–1470 K and 850 K–1300 K were identified. Contrary to Y{sub 2}O{sub 3}:Eu, both materials do show much lower cross-sensitivities to the oxygen concentration of the surrounding gas phase. - Highlights: ► Y{sub 3}Al{sub 5}O{sub 12}:Eu and YAlO{sub 3}:Eu were synthesised and characterised. ► The synthesis is outlined and the crystallographic structure was characterised. ► Emission spectra and the temperature lifetime characteristics were monitored. ► Compared to Y{sub 2}O{sub 3}:Eu lower sensitivities to the oxyg. conc. of the gas phase emerged.

  15. Engineering half-Heusler thermoelectric materials using Zintl chemistry

    Science.gov (United States)

    Zeier, Wolfgang G.; Schmitt, Jennifer; Hautier, Geoffroy; Aydemir, Umut; Gibbs, Zachary M.; Felser, Claudia; Snyder, G. Jeffrey

    2016-06-01

    Half-Heusler compounds based on XNiSn and XCoSb (X = Ti, Zr or Hf) have rapidly become important thermoelectric materials for converting waste heat into electricity. In this Review, we provide an overview on the electronic properties of half-Heusler compounds in an attempt to understand their basic structural chemistry and physical properties, and to guide their further development. Half-Heusler compounds can exhibit semiconducting transport behaviour even though they are described as ‘intermetallic’ compounds. Therefore, it is most useful to consider these systems as rigid-band semiconductors within the framework of Zintl (or valence-precise) compounds. These considerations aid our understanding of their properties, such as the bandgap and low hole mobility because of interstitial Ni defects in XNiSn. Understanding the structural and bonding characteristics, including the presence of defects, will help to develop different strategies to improve and design better half-Heusler thermoelectric materials.

  16. Multilayer SnSb4-SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability.

    Science.gov (United States)

    Liu, Ruirui; Zhou, Xiao; Zhai, Jiwei; Song, Jun; Wu, Pengzhi; Lai, Tianshu; Song, Sannian; Song, Zhitang

    2017-08-16

    A multilayer thin film, comprising two different phase change material (PCM) components alternatively deposited, provides an effective means to tune and leverage good properties of its components, promising a new route toward high-performance PCMs. The present study systematically investigated the SnSb 4 -SbSe multilayer thin film as a potential PCM, combining experiments and first-principles calculations, and demonstrated that these multilayer thin films exhibit good electrical resistivity, robust thermal stability, and superior phase change speed. In particular, the potential operating temperature for 10 years is shown to be 122.0 °C and the phase change speed reaches 5 ns in the device test. The good thermal stability of the multilayer thin film is shown to come from the formation of the Sb 2 Se 3 phase, whereas the fast phase change speed can be attributed to the formation of vacancies and a SbSe metastable phase. It is also demonstrated that the SbSe metastable phase contributes to further enhancing the electrical resistivity of the crystalline state and the thermal stability of the amorphous state, being vital to determining the properties of the multilayer SnSb 4 -SbSe thin film.

  17. Picosecond laser pulse-driven crystallization behavior of SiSb phase change memory thin films

    International Nuclear Information System (INIS)

    Huang Huan; Li Simian; Zhai Fengxiao; Wang Yang; Lai Tianshu; Wu Yiqun; Gan Fuxi

    2011-01-01

    Highlights: → We reported crystallization dynamics of a novel SiSb phase change material. → We measured optical constants of as-deposited and irradiated SiSb areas. → Optical properties of as-deposited and irradiated SiSb thin film were compared. → Crystallization of irradiated SiSb was confirmed by using AFM and micro-Raman spectra. → The heat conduction effect of lower metal layer of multi-layer films was studied. - Abstract: Transient phase change crystallization process of SiSb phase change thin films under the irradiation of picosecond (ps) laser pulse was studied using time-resolved reflectivity measurements. The ps laser pulse-crystallized domains were characterized by atomic force microscope, Raman spectra and ellipsometrical spectra measurements. A reflectivity contrast of about 15% can be achieved by ps laser pulse-induced crystallization. A minimum crystallization time of 11 ns was achieved by a low-fluence single ps laser pulse after pre-irradiation. SiSb was shown to be very promising for fast phase change memory applications.

  18. Evaluation of the effect of Bi, Sb, Sr and cooling condition on eutectic phases in an Al–Si–Cu alloy (ADC12) by in situ thermal analysis

    Energy Technology Data Exchange (ETDEWEB)

    Farahany, S., E-mail: saeedfarahany@gmail.com [Department of Materials Engineering, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia (UTM), 81310 Johor Bahru (Malaysia); Ourdjini, A.; Idrsi, M.H. [Department of Materials Engineering, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia (UTM), 81310 Johor Bahru (Malaysia); Shabestari, S.G. [Center of Excellence for High Strength Alloys Technology (CEHSAT), School of Metallurgy and Materials Engineering, Iran University of Science and Technology (IUST), 16846-13114 Tehran (Iran, Islamic Republic of)

    2013-05-10

    Highlights: • Combined effect of Bi, Sb and Sr additions, and cooling condition was evaluated. • Two different scenarios of recalecense in response to cooling rate were observed. • Fraction solid increased in the order of Sr > Bi > Sb, corresponds to Si morphologies. • Only Bi decreased the nucleation temperature of Al{sub 2}Cu eutectic phase. - Abstract: Al–Si and Al–Cu eutectic phases strongly affect the properties of Al–Si–Cu cast alloys. The characteristic parameters of these two eutectic phases with addition of bismuth, antimony and strontium under different cooling rates (0.6–2 °C/s) were investigated in ADC12 alloy using in situ thermal analysis. Results show that additives affect the Al–Si phase more than the Al–Cu (Al{sub 2}Cu) phase. Addition elements showed two different scenarios in response to cooling rate in terms of recalescence of the Al–Si eutectic phase. Both Bi and Sb caused an increase in recalescence with increased cooling rate but Sr addition reduced the recalescence. Additions of Sb and Sr increased the nucleation temperature of Al{sub 2}Cu, but addition of Bi produced an opposite effect. There seems to be relationship between the solidification temperature range and fraction solid of Al–Si and Al{sub 2}Cu eutectic phases. As the cooling rate increases the fraction solid of Al–Si decreased and that of Al{sub 2}Cu increased.

  19. The low-temperature structures of Hgsub(3-delta)SbF6 and Hgsub(3-delta)TaF6

    International Nuclear Information System (INIS)

    Tun, Z.; Brown, I.D.

    1986-01-01

    The Hg chains in both Hgsub(3-delta)SbF 6 and Hgsub(3-delta)TaF 6 order below room temperature. Down to about 190 K the ordering results from the interaction between parallel chains. It is short range and is different for the two compounds. Below 190 K both compounds transform to an isostructural long-range-ordered phase which is driven by the interaction between perpendicular chains. The structure of this phase in both compounds has been determined. Hgsub(3-delta)SbF 6 at 173 K, delta=0.134(1), Msub(r)=810.6(2). It is monoclinic but pseudotetragonal with I4 1 /amd, a=7.655(1), c=12.558(1) A, V=735.9(2) A 3 , Z=4, Dsub(x)=7.314(3) Mg m -3 , graphite-monochromated Mo Kα radiation, lambda=0.71069 A, μ=64.8 mm -1 , F(000)=1337.1(3). Hgsub(3-delta)TaF 6 at 150 K is isostructural but has delta=0.142(1), Msub(r)=868.2(2), a=7.634(1), c=12.610(2) A, V=734.9(2) A, Dsub(x)=7.844(3) Mg m -3 , μ=76.4 mm -1 , F(000)=1422.6(3). Comparison of the low-temperature structures with those at room temperature shows that the thermal contraction results from the shortening of interatomic distances associated with the weak bonds, with the result that the MF 6 (M=Sb, Ta) host lattice shrinks more than the Hg chains. Variation of the atomic displacement parameters with temperature indicates that the large librational displacements of the MF 6 ion result from thermal motion rather than static disorder. (orig.)

  20. Large linear magnetoresistance and magnetothermopower in layered SrZnSb$_2$

    OpenAIRE

    Wang, Kefeng; Petrovic, C.

    2016-01-01

    We report the large linear magnetoresistance ($\\sim 300\\%$ in 9 T field at 2 K) and magnetothermopower in layered SrZnSb$_2$ crystal with quasi-two-dimensional Sb layers. A crossover from the semiclassical parabolic field dependent magnetoresistance to linear field dependent magnetoresistance with increasing magnetic field is observed. The magnetoresistance behavior can be described very well by combining the semiclassical cyclotron contribution and the quantum limit magnetoresistance. Magnet...

  1. Experimental Study of the Sb-Sn-Zn Alloy System

    Czech Academy of Sciences Publication Activity Database

    Zobač, O.; Sopoušek, J.; Buršík, Jiří; Zemanová, Adéla; Roupcová, Pavla

    2014-01-01

    Roč. 45, č. 3 (2014), s. 1181-1188 ISSN 1073-5623 R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068 Institutional support: RVO:68081723 Keywords : Sb-Sn-Zn system * thermal analysis * CALPHAD method Subject RIV: BJ - Thermodynamics Impact factor: 1.730, year: 2014

  2. Fluoride ion donor properties of cis-OsO(2)F(4): synthesis, raman spectroscopic study, and X-ray crystal structure of [OsO(2)F(3)][Sb(2)F(11)].

    Science.gov (United States)

    Hughes, Michael J; Mercier, Hélène P A; Schrobilgen, Gary J

    2010-01-04

    The salt, [OsO(2)F(3)][Sb(2)F(11)], has been synthesized by dissolution of cis-OsO(2)F(4) in liquid SbF(5), followed by removal of excess SbF(5) at 0 degrees C to yield orange, crystalline [OsO(2)F(3)][Sb(2)F(11)]. The X-ray crystal structure (-173 degrees C) consists of an OsO(2)F(3)(+) cation fluorine bridged to an Sb(2)F(11)(-) anion. The light atoms of OsO(2)F(3)(+) and the bridging fluorine atom form a distorted octahedron around osmium in which the osmium atom is displaced from its center toward an oxygen atom and away from the trans-fluorine bridge atom. As in other transition metal dioxofluorides, the oxygen ligands are cis to one another and the fluorine bridge atom is trans to an oxygen ligand and cis to the remaining oxygen ligand. The Raman spectrum (-150 degrees C) of solid [OsO(2)F(3)][Sb(2)F(11)] was assigned on the basis of the ion pair observed in the low-temperature crystal structure. Under dynamic vacuum, [OsO(2)F(3)][Sb(2)F(11)] loses SbF(5), yielding the known [mu-F(OsO(2)F(3))(2)][Sb(2)F(11)] salt with no evidence for [OsO(2)F(3)][SbF(6)] formation. Attempts to synthesize [OsO(2)F(3)][SbF(6)] by the reaction of [OsO(2)F(3)][Sb(2)F(11)] with an equimolar amount of cis-OsO(2)F(4) or by a 1:1 stoichiometric reaction of cis-OsO(2)F(4) with SbF(5) in anhydrous HF yielded only [mu-F(OsO(2)F(3))(2)][Sb(2)F(11)]. Quantum-chemical calculations at the SVWN and B3LYP levels of theory and natural bond orbital analyses were used to calculate the gas-phase geometries, vibrational frequencies, natural population analysis charges, bond orders, and valencies of OsO(2)F(3)(+), [OsO(2)F(3)][Sb(2)F(11)], [OsO(2)F(3)][SbF(6)], and Sb(2)F(11)(-). The relative thermochemical stabilities of [OsO(2)F(3)][SbF(6)], [OsO(2)F(3)][Sb(2)F(11)], [OsO(2)F(3)][AsF(6)], [mu-F(OsO(2)F(3))(2)][SbF(6)], [mu-F(OsO(2)F(3))(2)][Sb(2)F(11)], and [mu-F(OsO(2)F(3))(2)][AsF(6)] were assessed using the appropriate Born-Haber cycles to account for the preference for [mu-F(OsO(2)F(3

  3. Suppression of Red Luminescence in Wire Explosion Derived Eu:ZnO

    Science.gov (United States)

    Pallavi, Bandi; Sathyan, Sneha; Yoshimura, Takuya; Kumar, Praveen; Anbalagan, Kousika; Talluri, Bhusankar; Ramanujam, Sarathi; Ranjan, Prem; Thomas, Tiju

    2018-03-01

    Europium oxide (Eu2O3) is coated on zinc (Zn) wire using the electrophoretic deposition process. The coated Zn wire is subjected to the wire explosion process (WEP) which is rapid (material has ˜ 0.24 at.% doping. This analysis also shows that, unlike another popular material GaN, in the case of ZnO, Eu3+ strictly substitutes for Zn2+ (i.e., dopant replacing a cation-anion pair does not seem possible). It may be noted that Eu3+ in a suitable host is oftentimes reported to be an efficient luminophore. The IR spectra show a band shift from 486 cm-1 to 493 cm-1; with peak shifts from 436 cm-1 to 430 cm-1 in Raman spectra. These too indicate the presence of Eu in the samples. However, at room temperature, only green luminescence (centered at 534 nm) is observed from the sample indicating (1) high concentrations of OZn anti-site defects and Zn vacancies, and (2) concomitant quenching of the luminescence at room temperature. Our results suggest that WEP is viable for synthesizing rare earth doped ceramic materials. However, obtaining efficient phosphors using this approach will likely require, (1) reduction of defect densities, and (2) appropriate passivation using post-processing.

  4. Enhanced thermoelectric performance with participation of F-electrons in β-Zn4Sb3

    International Nuclear Information System (INIS)

    Liu, Mian; Qin, Xiaoying; Liu, Changsong; Li, Xiyu; Yang, Xiuhui

    2014-01-01

    Highlights: • Find an effective route to enhance the thermoelectric figure of merit of β-Zn 4 Sb 3 . • Provide the corresponding theoretical predictions. • Investigated the effects of doping Ce and Pr in β-Zn 4 Sb 3 . -- Abstract: The effects of rare-earth element impurities Ce and Pr on the electronic structure and thermoelectric properties of β-Zn 4 Sb 3 were investigated by performing self-consistent ab initio electronic structure calculations within density functional theory and solving the Boltzmann transport equations within the relaxation time approximation. The results demonstrated that these rare-earth element impurities with f orbitals could introduce giant sharp resonant peaks in the density of states (DOS) near the host valence band maximum in energy. And these deliberately engineered DOS peaks result in a sharp increase of the room-temperature Seebeck coefficient and power factor from those of impurity-free system by a factor of 100 and 22, respectively. Additionally, with the simultaneous declining of carrier thermal conductivity, a potential 5-fold increase at least with Ce doping and more than 3 times increase with Pr doping in the thermoelectric figure of merit of β-Zn 4 Sb 3 at room temperature are achieved. The effective DOS restructuring strategy opens up new opportunities for thermoelectric power generation and waste heat recovery at large scale

  5. A review of Pb-Sb(As-S, Cu(Ag-Fe(Zn-Sb(As-S, Ag(Pb-Bi(Sb-S and Pb-Bi-S(Te sulfosalt systems from the Boranja orefield, West Serbia

    Directory of Open Access Journals (Sweden)

    Radosavljević Slobodan A.

    2016-01-01

    Full Text Available Recent mineralogical, chemical, physical, and crystallographic investigations of the Boranja orefield showed very complex mineral associations and assemblages where sulfosalts have significant role. The sulfosalts of the Boranja orefield can be divided in four main groups: (i Pb-Sb(As-S system with ±Fe and ±Cu; (ii Cu(Ag-Fe(Zn-Sb(As-S system; (iii Ag(Pb-Bi(Sb-S; (iv and Pb-Bi-S(Te system. Spatially, these sulfosalts are widely spread, however, they are the most abundant in the following polymetallic deposits and ore zones: Cu(Bi-FeS Kram-Mlakva; Pb(Ag-Zn-FeS2 Veliki Majdan (Kolarica-Centralni revir-Kojići; Sb-Zn-Pb-As Rujevac; and Pb-Zn-FeS2-BaSO4 Bobija. The multi stage formation of minerals, from skarnhydrothermal to complex hydrothermal with various stages and sub-stages has been determined. All hydrothermal stages and sub-stages of various polymetallic deposits and ore zones within the Boranja orefield are followed by a variety of sulfosalts. [Projekat Ministarstva nauke Republike Srbije, br. OI-176016: Magmatism and geodynamics of the Balkan Peninsula from Mesozoic to present day: Significance for the formation of metallic and non-metallic mineral deposits

  6. Efficiencies of Eu{sup 3+} ions and hydrogen atoms as donors in ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp [NTT Device Innovation Center, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)

    2016-09-15

    The donor efficiencies of Eu{sup 3+} ions and hydrogen atoms in ZnO crystalline films were investigated with reference to that of Ga{sup 3+} ions. It was found that Eu{sup 3+} ions acted as extrinsic donors in ZnO:Eu films, yielding a resistivity of 1.8 × 10{sup −3} Ω cm at a doping level of 1 at. %. This value is comparable to one for intrinsic donors in undoped ZnO films. The conductivity was maintained as the deposition temperature was increased to 200 °C, and this is evidence for the contribution of extrinsic donors. Deposition of Ga-doped and Eu-doped ZnO films in an H{sub 2}O gas flow produced oxyhydrogenated ZnO:(Ga, H) and ZnO:(Eu, H) films in which the Ga{sup 3+} and Eu{sup 3+} donors were deactivated by oxidization. Nevertheless, hydrogen donors contributed to electrical conduction yielding a resistivity of 1 × 10{sup −2} Ω cm. Postannealing in an H{sub 2} gas ambient alleviated the excessive oxidization of the films and thereby reactivated the donor action of Ga{sup 3+} and Eu{sup 3+} ions, causing the resistivity to recover to 10{sup −3} Ω cm for ZnO:(Ga, H) and 10{sup −2} Ω cm for ZnO:(Eu, H). In contrast, vacuum annealing of ZnO:(Ga, H) and ZnO:(Eu, H) films increased resistivity through removal of hydrogen donors while not affecting the oxidized condition of the samples.

  7. Synthesis and characterization of heterobinuclear (La-Zn, Pr-Zn, Nd-Zn, Sm-Zn, Eu-Zn, Gd-Zn, Tb-Zn, Dy-Zn) azine-bridged complexes

    International Nuclear Information System (INIS)

    Singh, Bachcha; Srivastav, A.K.; Singh, P.K.

    1997-01-01

    Zinc(II) complex of 2-acetylpyridine salicyl aldazine (Haps) of the type Zn(aps) 2 (H 2 O) 2 has been synthesised. The reaction of Zn(aps) 2 (H 2 O) 2 with lanthanide chlorides, LnCl 3 (where Ln=La, Pr, Nd, Sm, Eu, Gd, Tb and Dy) yields azine-bridged heterobinuclear complexes of the formulae LnCl 3 Zn(aps) 2 (H 2 O) 2 . These complexes have been characterized by elemental analyses, molecular weight, conductance (solid and solution) and magnetic susceptibility measurements, mass, IR and electronic spectral data. X-ray powder diffraction data indicate the tetragonal unit lattice for Zn(aps) 2 (H 2 O) 2 and PrCl 3 Zn(aps) 2 (H 2 O) 2 . (author)

  8. Organo-Zintl-based superatoms: [Ge9(CHO)3] and [Ge9(CHO)

    Science.gov (United States)

    Reddy, G. Naaresh; Jena, Puru; Giri, Santanab

    2017-10-01

    A systematic study, based on density functional theory and different hybrid functionals for exchange-correlation potential, shows that the electron affinities of organo-zintl clusters [Ge9(R)n] [R = CHO; n = 1, 3] are close to that of chlorine (3.6 eV) and iodine (3.0 eV). A detailed study of the molecular orbitals of these complexes, when compared to those of Al13-, Cl- and I-, confirm that they behave as superatoms, mimicking the chemistry of halogens. This study expands the scope of superatoms by including a new class of pseudo-halogens based on ligated organo-Zintl ions.

  9. Efficient and thermally stable red luminescence from nano-sized phosphor of Gd{sub 6}MoO{sub 12}:Eu{sup 3+}

    Energy Technology Data Exchange (ETDEWEB)

    Qin, Lin [Soochow University, College of Chemistry, Chemical Engineering and Materials Science (China); Wei, Donglei [Pukyong National University, Department of Physics and Interdisciplinary Program of Biomedical Engineering (Korea, Republic of); Huang, Yanlin [Soochow University, College of Chemistry, Chemical Engineering and Materials Science (China); Kim, Sun Il [Pukyong National University, Department of Physics and Interdisciplinary Program of Biomedical Engineering (Korea, Republic of); Yu, Young Moon [Pukyong National University, LED-Marin Convergence Technology R and BD Center (Korea, Republic of); Seo, Hyo Jin, E-mail: hjseo@pknu.ac.kr [Pukyong National University, Department of Physics and Interdisciplinary Program of Biomedical Engineering (Korea, Republic of)

    2013-09-15

    A novel red-emitting nano-phosphor of Eu{sup 3+}-doped Gd{sub 6}MoO{sub 12} was successfully synthesized by the Pechini method. The crystalline phase was confirmed by X-ray powder diffraction analysis. The morphology of the nano-phosphor was analyzed by scanning electron microscopy, indicating a good crystallization with particles smaller than 500 nm. The luminescence properties such as photoluminescence spectra and decay curves were investigated. The phosphors can be efficiently excited by near-ultraviolet (near-UV) light and exhibit a bright red luminescence around 613 nm ascribed to the forced electric dipole transition {sup 5}D{sub 0}{yields}{sup 7}F{sub 2} of Eu{sup 3+} ions. The thermal stabilities were investigated from the temperature-dependent luminescence decay curves (lifetimes) and spectra intensities. The luminescence properties in relation to applications in white light-emitting diodes (W-LEDs) such as the absolute luminescence quantum efficiency, excitation wavelength, and color coordinates were discussed. The Gd{sub 6}MoO{sub 12}:Eu{sup 3+} nano-phosphor is a promising red-emitting candidate for the fabrication of W-LEDs with near-UV chips.

  10. Characteristics of phase transition and separation in a In-Ge-Sb-Te system

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sung Jin [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Jang, Moon Hyung [Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104 (United States); Park, Seung-Jong [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Cho, Mann-Ho, E-mail: mh.cho@yonsei.ac.kr [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Ko, Dae-Hong [Department of Material Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

    2012-10-01

    Highlights: Black-Right-Pointing-Pointer InGeSbTe films were fabricated via co-deposition stoichiometric GST and IST targets. Black-Right-Pointing-Pointer As the amount of IST was increased in InGeSbTe, the value for V{sub th} and the phase transition temperature were increased. Black-Right-Pointing-Pointer The phase separation in InGeSbTe is caused by differences in the enthalpy change for formation and different atomic concentrations. - Abstract: In-doped GeSbTe films were deposited by ion beam sputtering deposition (IBSD) using Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) and In{sub 3}Sb{sub 1}Te{sub 2} (IST) as targets. The phase change characteristics of the resulting films were then investigated by electrical measurements, including static testing, in situ 4-point R{sub s} measurements, X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman spectroscopy. The threshold voltage of the films increased, with increasing levels of IST. This phenomenon is consistent with the increased crystallization temperature in X-ray data and in situ 4-point R{sub s} data. In addition, in In{sub 28}Ge{sub 12}Sb{sub 26}Te{sub 34}, multiple V{sub th} values with a stepwise change are observed. The minimum time for the crystallization of InGeSbTe films was shorter than that for GST. X-ray data and Raman data for the crystalline structure show that phase separation to In{sub 2}Te{sub 3} occurred in all of the InGeSbTe samples after annealing at 350 Degree-Sign C. Moreover, in the case of InGeSbTe films with high concentrations of In (28 at.%), Sb phase separation was also observed. The observed phases indicate that the origin of the phase separation of InGeSbTe films is from the enthalpy change of formation and differences in Ge-Te, In-Te, Sb-Te, In-Sb and In-In bond energies.

  11. A quantum chemical analysis of Zn and Sb doping and co-doping in SnO2

    Directory of Open Access Journals (Sweden)

    Luis Villamagua

    2017-10-01

    Full Text Available This work presents a quantum chemical study of Zn and Sb doping and co-doping in SnO2 carried out by a DFT+U method. The analysis has been developed by introducing three different modifications in the otherwise pure SnO2 system. In the first place, an oxygen vacancy was introduced within the crystal. Following, such a system was doped (separately by Zn or Sb impurities. Finally, the best energetic positions for both Zn and Sb atoms were simultaneously introduced within the lattice. Results of the simulations show that the confined charge that appeared due to the introduction of the oxygen vacancy interacts with the dopants atoms, being this interaction mostly responsible of the observed effects, i.e., EG shrinkage, F-centers formations, and magnetic momentum rise.

  12. Assembly of a new inorganic-organic frameworks based on [Sb4Mo12(OH)6O48]10- polyanion

    Science.gov (United States)

    Thabet, Safa; Ayed, Meriem; Ayed, Brahim; Haddad, Amor

    2014-10-01

    A new organic-inorganic hybrid material, (C4N2H7)8[K(H2O)]2[Sb4Mo12(OH)6O48]ṡ16H2O (1) has been isolated by the conventional solution method and characterized by elemental analysis, single-crystal X-ray diffraction, infrared spectroscopy, UV-visible spectroscopies, cyclic voltammetry and TG-DTA analysis. The compound crystallizes in the triclinic space group P - 1 with a = 13.407(6) Å, b = 13.906(2) Å, c = 14.657(7) Å, α = 77.216(9)°, β = 71.284(6)°, γ = 71.312(3)° and Z = 1. The crystal structure exhibits an infinite 1D inorganic structure built from [Sb4Mo12(OH)6O48]10- clusters and potassium cations; adjacent chains are further joined up hydrogen bonding interactions between protonated 2-methylimidazolim cations, water molecules and polyoxoanions to form a 3D supramolecular architecture.

  13. Structural phase transition and opto-electronic properties of NaZnAs

    Energy Technology Data Exchange (ETDEWEB)

    Djied, A.; Seddik, T.; Merabiha, O. [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 (Algeria); Murtaza, G. [Materials Modeling Lab, Department of Physics, Islamia College University, Peshawar (Pakistan); Khenata, R. [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 (Algeria); Ahmed, R., E-mail: rashidahmed@utm.my [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Bin-Omran, S. [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Uğur, Ş. [Department of Physics, Faculty of Sciences, Gazi University, 06500 Teknikokullar, Ankara (Turkey); Bouhemadou, A. [Laboratory for Developing New Materials and their Characterization, Department of Physics, Faculty of Science, University Setif 1, 19000 Setif (Algeria)

    2015-02-15

    Highlights: • First competent characterizations of NaZnAs at the level of FP-LAPW+lo. • NaZnAs, a potential alternative candidate to III-V for photovoltaic applications. • NaZnAs, a cheaper and abundantly available direct band gap semiconductor. • Potential material for solar radiation absorber from infrared to ultraviolet. - Abstract: In this study, we predict the structural phase transitions as well as opto-electronic properties of the filled-tetrahedral (Nowotny-Juza) NaZnAs compound. Calculations employ the full potential (FP) linearized augmented plane wave (LAPW) plus local orbitals (lo) scheme. The exchange-correlation potential is treated within the generalized gradient approximation of Perdew-Burke and Ernzerhof (GGA-PBE). In addition, Tran and Blaha (TB) modified Becke-Johnson (mBJ) potential is also used to obtain more accurate optoelectronic properties. Geometry optimization is performed to obtain reliable total energies and other structural parameters for each NaZnAs phase. In our study, the sequence of the structural phase transition on compression is Cu{sub 2}Sb-type → β → α phase. NaZnAs is a direct (Γ-Γ) band gap semiconductor for all the structural phases. However, compared to PBE-GGA, the mBJ approximation reproduces better fundamental band gaps. Moreover, for insight into its potential for photovoltaic applications, different optical parameters are studied.

  14. Structural phase transition and opto-electronic properties of NaZnAs

    International Nuclear Information System (INIS)

    Djied, A.; Seddik, T.; Merabiha, O.; Murtaza, G.; Khenata, R.; Ahmed, R.; Bin-Omran, S.; Uğur, Ş.; Bouhemadou, A.

    2015-01-01

    Highlights: • First competent characterizations of NaZnAs at the level of FP-LAPW+lo. • NaZnAs, a potential alternative candidate to III-V for photovoltaic applications. • NaZnAs, a cheaper and abundantly available direct band gap semiconductor. • Potential material for solar radiation absorber from infrared to ultraviolet. - Abstract: In this study, we predict the structural phase transitions as well as opto-electronic properties of the filled-tetrahedral (Nowotny-Juza) NaZnAs compound. Calculations employ the full potential (FP) linearized augmented plane wave (LAPW) plus local orbitals (lo) scheme. The exchange-correlation potential is treated within the generalized gradient approximation of Perdew-Burke and Ernzerhof (GGA-PBE). In addition, Tran and Blaha (TB) modified Becke-Johnson (mBJ) potential is also used to obtain more accurate optoelectronic properties. Geometry optimization is performed to obtain reliable total energies and other structural parameters for each NaZnAs phase. In our study, the sequence of the structural phase transition on compression is Cu 2 Sb-type → β → α phase. NaZnAs is a direct (Γ-Γ) band gap semiconductor for all the structural phases. However, compared to PBE-GGA, the mBJ approximation reproduces better fundamental band gaps. Moreover, for insight into its potential for photovoltaic applications, different optical parameters are studied

  15. Peculiarities of thermoelectric half-Heusler phase formation in Zr–Co–Sb ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Romaka, V.V., E-mail: romakav@lp.edu.ua [Department of Applied Material Science and Materials Engineering, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Institut für Physikalische Chemie, Universität Wien, Währingerstr. 42, A-1090 Wien (Austria); Romaka, L. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Rogl, P. [Institut für Physikalische Chemie, Universität Wien, Währingerstr. 42, A-1090 Wien (Austria); Stadnyk, Yu. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Melnychenko, N. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Army Academy named after Hetman Petro Sahaydachnyi, Gvardijska Str. 32, 79012 Lviv (Ukraine); Korzh, R.; Duriagina, Z. [Department of Applied Material Science and Materials Engineering, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Horyn, A. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine)

    2014-02-05

    Highlights: • Phase relations for the Zr–Co–Sb system at 500 °C. • Homogeneity region for half-Heusler phase. • The distribution of DOS for Zr{sub 1+x}Co{sub 1−x}Sb predicts transition from semiconductor (x = 0) to metallic (x = 0.13) like behavior. • The existence of the solid solution Zr{sub 5}Co{sub x}Sb{sub 3+y} (x = 0.0–1.0, y = 0.0–1.0). -- Abstract: The phase equilibria in the Zr–Co–Sb ternary system were studied at 873 K by means of X-ray and metallographic analyses in the whole concentration range. The interaction between the elements results the formation of four ternary compounds at investigated temperature: ZrCoSb (MgAgAs-type), Zr{sub 6}CoSb{sub 2} (K{sub 2}UF{sub 6}-type), Zr{sub 5}CoSb{sub 3} (Hf{sub 5}CuSn{sub 3}-type) and Zr{sub 5}Co{sub 0.5}Sb{sub 2.5} (W{sub 5}Si{sub 3}-type). The limited composition Zr{sub 5}CoSb{sub 3} of the solid solution based on the Zr{sub 5}Sb{sub 3−4} binaries is considered as compound with Hf{sub 5}CuSn{sub 3} structure type. The influence of the disordering and defects in the crystal structure of ZrCoSb on the physical properties was analyzed. The performed electronic structure calculations are in good agreement with electrical and magnetic studies.

  16. Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

    Science.gov (United States)

    Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

    2016-01-01

    We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

  17. Electrical and thermal transport properties of Y bxCo4Sb12 filled skutterudites with ultrahigh carrier concentrations

    Directory of Open Access Journals (Sweden)

    Yulong Li

    2015-11-01

    Full Text Available For filled skutterudites, element Yb is one of the most common and important fillers. However, the optimal carrier concentration range in Y bxCo4Sb12 filled skutterudites has not been determined as a result of the low Yb filling fraction limit. In this study, a non-equilibrium fabrication process (MS-SPS process, consisting of a melt-spinning method and a spark plasma sintering technique, has been applied to prepare Y bxCo4Sb12 samples. The Yb filling fraction is successfully extended to 0.35, which provides the possibility to clarify the optimal carrier concentration range for Yb-filled skutterudites. High carrier concentrations, with a maximum of around 1 × 1021 cm−3, were achieved in the MS-SPS Y bxCo4Sb12 samples due to the significantly enhanced Yb filling fractions. The phase compositions, lattice parameters, electrical and thermal transport properties of the MS-SPS Y bxCo4Sb12 samples with high carrier concentrations were systematically investigated. An optimal carrier concentration range of around 5 ∼ 6 × 1020 cm−3, corresponding to the actual Yb filling fraction of around 0.21∼0.26, has been determined, which displays the highest thermoelectric performance in Y bxCo4Sb12 thermoelectric materials.

  18. Triplet superconductivity in PrOs{sub 4}Sb{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Maki, K. [Department of Physics and Astronomy, University of Southern California, Los Angeles, CA 90089-0484 (United States); Won, H. [Department of Physics, Hallym University Chuncheon 200-702 (Korea, Republic of) ]. E-mail: hkwon@hallym.ac.kr; Parker, David [Department of Physics and Astronomy, University of Southern California, Los Angeles, CA 90089-0484 (United States); Haas, Stephan [Department of Physics and Astronomy, University of Southern California, Los Angeles, CA 90089-0484 (United States); Izawa, K. [Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Matsuda, Y. [Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan)

    2005-04-30

    Here we propose spin triplet superconductors for the A- and B-phase in PrOs{sub 4}Sb{sub 12}. The present model describes consistently the thermal conductivity {kappa}{sub zz} data obtained by Izawa et al. for T>=150mK.

  19. Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

    International Nuclear Information System (INIS)

    Korhonen, E; Prozheeva, V; Tuomisto, F; Bierwagen, O; Speck, J S; White, M E; Galazka, Z; Liu, H; Izyumskaya, N; Avrutin, V; Özgür, Ü; Morkoç, H

    2015-01-01

    We present positron annihilation results on Sb-doped SnO 2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO 2 the concentrations appear too low to cause significant compensation. (invited article)

  20. Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

    Science.gov (United States)

    Korhonen, E.; Prozheeva, V.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; White, M. E.; Galazka, Z.; Liu, H.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

    2015-02-01

    We present positron annihilation results on Sb-doped SnO2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO2 the concentrations appear too low to cause significant compensation.

  1. Pressure-induced phase transition and octahedral tilt system change of Ba2BiSbO6

    International Nuclear Information System (INIS)

    Lufaso, Michael W.; Macquart, Rene B.; Lee, Yongjae; Vogt, Thomas; Loye, Hans-Conrad zur

    2006-01-01

    High-resolution X-ray synchrotron powder diffraction studies under high-pressure conditions are reported for the ordered double perovskite Ba 2 BiSbO 6 . Near 4GPa, the oxide undergoes a pressure-induced phase transition. The symmetry of the material changes during the phase transition from space group R3-bar to space group I2/m, which is consistent with a change in the octahedral tilting distortion from an a - a - a - type to a 0 b - b - type using the Glazer notation. A fit of the volume-pressure data using the Birch-Murnagaham equation of state yielded a bulk modulus of 144(8)GPa for the rhombohedral phase

  2. Electronic Structure and Optical Properties Of EuIn2P2

    KAUST Repository

    Singh, Nirpendra; Schwingenschlö gl, Udo; Rhee, J. Y.

    2011-01-01

    The electronic structures and, optical and magneto‐optical properties of a newly found Zintl compound EuIn2P2 have been investigated within the density‐functional theory using the highly precise full‐potential linear‐augmented‐plane‐wave method

  3. Eu-doped ZnO-HfO2 hybrid nanocrystal-embedded low-loss glass-ceramic waveguides

    Science.gov (United States)

    Ghosh, Subhabrata; N, Shivakiran Bhaktha B.

    2016-03-01

    We report on the sol-gel fabrication, using a dip-coating technique, of low-loss Eu-doped 70SiO2 -(30-x) HfO2-xZnO (x = 2, 5, 7 and 10 mol%) ternary glass-ceramic planar waveguides. Transmission electron microscopy and grazing incident x-ray diffraction experiments confirm the controlled growth of hybrid nanocrystals with an average size of 3 nm-25 nm, composed of ZnO encapsulated by a thin layer of nanocrystalline HfO2, with an increase of ZnO concentration from x = 2 mol% to 10 mol% in the SiO2-HfO2 composite matrix. The effect of crystallization on the local environment of Eu ions, doped in the ZnO-HfO2 hybrid nanocrystal-embedded glass-ceramic matrix, is studied using photoluminescence spectra, wherein an intense mixed-valence state (divalent as well as trivalent) emission of Eu ions is observed. The existence of Eu2+ and Eu3+ in the SiO2-HfO2-ZnO ternary matrix is confirmed by x-ray photoelectron spectroscopy. Importantly, the Eu{}2+,3+-doped ternary waveguides exhibit low propagation losses (0.3 ± 0.2 dB cm-1 at 632.8 nm) and optical transparency in the visible region of the electromagnetic spectrum, which makes ZnO-HfO2 nanocrystal-embedded SiO2-HfO2-ZnO waveguides a viable candidate for the development of on-chip, active, integrated optical devices.

  4. Structural, electronic, and thermal properties of indium-filled InxIr4Sb12 skutterudites

    Science.gov (United States)

    Wallace, M. K.; Li, Jun; Subramanian, M. A.

    2018-06-01

    The "phonon-glass/electron-crystal" approach has been implemented through incorporation of "rattlers" into skutterudite void sites to increase phonon scattering and thus increase the thermoelectric efficiency. Indium filled IrSb3 skutterudites are reported for the first time. Polycrystalline samples of InxIr4Sb12 (0 ≤ x ≤ 0.2) were prepared by solid-state reaction under a gas mixture of 5% H2 and 95% Ar. The solubility limit of InxIr4Sb12 was found to be close to 0.18. Synchrotron X-ray diffraction refinements reveal all InxIr4Sb12 phases crystallized in body-centered cubic structure (space group : Im 3 bar) with ∼8% antimony site vacancy and with indium partially occupying the 16f site. Unlike known rattler filled skutterudites, under synthetic conditions employed, indium filling in IrSb3 significantly increases the electrical resistivity and decreases the Seebeck coefficient (n-type) while reducing the thermal conductivity by ∼30%. The resultant power factor offsets the decrease in total thermal conductivity giving rise to a substantial decrease in ZT. Principal thermoelectric properties of InxM4Sb12 (M = Co, Rh, Ir) phases are compared. As iridium is a 5d transition metal, zero field cooled (ZFC) magnetization were performed to unravel the effect of spin-orbit interaction on the electronic properties. These results serve to advance the understanding of filled skutterudites, and provide additional insight on the less explored smaller "rattlers" and their influence on key thermoelectric properties.

  5. Synthesis and luminescence properties of ZnAl{sub 2}O{sub 4}:RE{sup 3+} (RE = Eu, Sm) phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung Jin; Cho, Shin Ho [Silla University, Busan (Korea, Republic of)

    2014-01-15

    ZnAl{sub 2}O{sub 4}:RE{sup 3+} (RE = Eu or Sm) phosphor powders were synthesized with different concentrations of activator ions by using the conventional solid-state reaction method. The effects of the concentration of activator ions on the structural, morphological, and luminescent properties of zinc aluminate phosphors were investigated. The X-ray diffraction patterns revealed that the phosphors synthesized with different concentrations of activator ions showed mixed phases of ZnAl{sub 2}O{sub 4}, ZnO, and Al{sub 2}O{sub 3}. The crystallite size was estimated using the Scherrer formula, and the maximum size was obtained for 0.20 mol of Eu{sup 3+} ions. The emission spectra of of Eu{sup 3+}-doped ZnAl{sub 2}O{sub 4} phosphors under excitation at 303 nm exhibited one intense green band at approximately 520 nm and three weak bands centered at 590, 621, and 701 nm, respectively. The intensity of all the emission bands reached a maximum for 0.05 mol of Eu{sup 3+} ions. For the Sm{sup 3+}-doped ZnAl{sub 2}O{sub 4} phosphors, a broad emission band peak at 526 nm and several weak lines in the range 470 - 700 nm were observed. The results suggest that the luminescent intensity of the phosphors can be enhanced by controlling the amount of activator ions incorporated into the host lattice.

  6. Enhanced thermoelectric performance with participation of F-electrons in β-Zn{sub 4}Sb{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Mian; Qin, Xiaoying, E-mail: xyqin@issp.ac.cn; Liu, Changsong; Li, Xiyu; Yang, Xiuhui

    2014-01-25

    Highlights: • Find an effective route to enhance the thermoelectric figure of merit of β-Zn{sub 4}Sb{sub 3}. • Provide the corresponding theoretical predictions. • Investigated the effects of doping Ce and Pr in β-Zn{sub 4}Sb{sub 3}. -- Abstract: The effects of rare-earth element impurities Ce and Pr on the electronic structure and thermoelectric properties of β-Zn{sub 4}Sb{sub 3} were investigated by performing self-consistent ab initio electronic structure calculations within density functional theory and solving the Boltzmann transport equations within the relaxation time approximation. The results demonstrated that these rare-earth element impurities with f orbitals could introduce giant sharp resonant peaks in the density of states (DOS) near the host valence band maximum in energy. And these deliberately engineered DOS peaks result in a sharp increase of the room-temperature Seebeck coefficient and power factor from those of impurity-free system by a factor of 100 and 22, respectively. Additionally, with the simultaneous declining of carrier thermal conductivity, a potential 5-fold increase at least with Ce doping and more than 3 times increase with Pr doping in the thermoelectric figure of merit of β-Zn{sub 4}Sb{sub 3} at room temperature are achieved. The effective DOS restructuring strategy opens up new opportunities for thermoelectric power generation and waste heat recovery at large scale.

  7. Preparation and crystal structure of SrCu/sub 2/Sb/sub 2/ and SrZnBi/sub 2/

    Energy Technology Data Exchange (ETDEWEB)

    Cordier, G; Eisenmann, B; Schaefer, H [Technische Hochschule Darmstadt (Germany, F.R.). Fachbereich Anorganische Chemie und Kernchemie

    1976-10-01

    SrCu/sub 2/Sb/sub 2/ and SrZnBi/sub 2/ have been prepared and analytically and structurally characterized. SrCu/sub 2/Sb/sub 2/ crystallizes tetragonal in the CaBe/sub 2/Ge/sub 2/ structure type. SrZnBi/sub 2/ has its own structure type. In both structures the transition metal atoms form with the semimetal atoms tetragonal pyramids, which are connected by common edges of the basis to twodimensional sheets. These sheets are separated in the case of SrCu/sub 2/Sb/sub 2/ by single sheets of strontium atoms, in the case of SrZnBi/sub 2/ by double sheets of strontium atoms in which fourfold nets of Bi atoms are located.

  8. Magnetic Phase Transitions of CeSb. II: Effects of Applied Magnetic Fields

    DEFF Research Database (Denmark)

    Meier, G.; Fischer, P.; Hälg, W.

    1978-01-01

    For pt.I see ibid., vol.11, p.345 (1978). The metamagnetic phase transition and the associated phase diagram of the anomalous antiferromagnet CeSb were determined in a neutron diffraction study of the magnetic ordering of CeSb single crystals in applied magnetic fields parallel to the (001...... magnetic fields. The observed magnetic structures do not correspond to the stable configurations expected from the molecular field theory of the face-centred cubic lattice. The change from a first-order transition at the Neel temperature in zero field to second-order transition at high fields points...

  9. Crystal structures of KM(AsF{sub 6}){sub 3} (M{sup 2+} = Mg, Co, Mn, Zn), KCu(SbF{sub 6}){sub 3} and [Co(HF){sub 2}]Sr[Sr(HF)]{sub 2}-[Sr(HF){sub 2}]{sub 2}[AsF{sub 6}]{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Mazej, Zoran; Goreshnik, Evgeny [Jozef Stefan Institute, Ljubljana (Slovakia). Dept. of Inorganic Chemisrty and Technology

    2015-05-01

    The KM(AsF{sub 6}){sub 3} (M{sup 2+} = Mg, Co, Mn, Zn) and KCu(SbF{sub 6}){sub 3} compounds crystallize isotypically to previously known KNi(AsF{sub 6}){sub 3}. The main features of the structure of these compounds are rings of MF{sub 6} octahedra sharing apexes with AsF{sub 6} octahedra connected into infinite tri-dimensional frameworks. In this arrangement cavities are formed where K{sup +} cations are placed. Single crystals of CoSr{sub 5}(AsF{sub 6}){sub 12}.8HF were obtained as one of the products after the crystallization of 3KF/CoF{sub 2}/SrF{sub 2} mixture in the presence of AsF{sub 5} in anhydrous HF. The CoSr{sub 5}(AsF{sub 6}){sub 12}.8HF is monoclinic, C/2c (No.15), with a = 26.773(5) Aa, b = 10.087(2) Aa, c = 21.141(5) Aa, β = 93.296(13) {sup circle}, V = 5699.9(19) Aa{sup 3} at 200 K, and Z = 4. There are three crystallographically non-equivalent Sr{sup 2+} cations in the crystal structure of CoSr{sub 5}(AsF{sub 6}){sub 12}.8HF. The Sr1 is coordinated by ten fluorine atoms from eight different [AsF{sub 6}]- anions, meanwhile Sr2 and Sr3 are bound to nine fluorine atoms provided by one HF and eight AsF{sub 6} units or by two HF and six AsF{sub 6} units, respectively. The Co{sup 2+} is coordinated distorted-octahedrally by six fluorine atoms from two HF molecules and four different AsF{sub 6} units. All those moieties in the crystal structure of [Co(HF){sub 2}]Sr[Sr(HF)]{sub 2}[Sr(HF){sub 2}]{sub 2}[AsF{sub 6}]{sub 12} are connected into tridimensional framework. The CoSr{sub 5}(AsF{sub 6}){sub 12}.8HF is a unique example of compound where HF molecules are directly bound via fluorine atoms to two different metal centres.

  10. Unusual crystallization behavior in Ga-Sb phase change alloys

    Directory of Open Access Journals (Sweden)

    Magali Putero

    2013-12-01

    Full Text Available Combined in situ X-ray scattering techniques using synchrotron radiation were applied to investigate the crystallization behavior of Sb-rich Ga-Sb alloys. Measurements of the sheet resistance during heating indicated a reduced crystallization temperature with increased Sb content, which was confirmed by in situ X-ray diffraction. The electrical contrast increased with increasing Sb content and the resistivities in both the amorphous and crystalline phases decreased. It was found that by tuning the composition between Ga:Sb = 9:91 (in at.% and Ga:Sb = 45:55, the change in mass density upon crystallization changes from an increase in mass density which is typical for most phase change materials to a decrease in mass density. At the composition of Ga:Sb = 30:70, no mass density change is observed which should be very beneficial for phase change random access memory (PCRAM applications where a change in mass density during cycling is assumed to cause void formation and PCRAM device failure.

  11. Enhancement of thermoelectric properties by energy filtering: Theoretical potential and experimental reality in nanostructured ZnSb

    Energy Technology Data Exchange (ETDEWEB)

    Berland, Kristian [Centre for Materials Science and Nanotechnology (SMN), University of Oslo, P.O.B. 1126 Blindern, NO-0318 Oslo (Norway); Song, Xin [Department of Physics, University of Oslo, P.O.B. 1048 Blindern, NO-0316 Oslo (Norway); Carvalho, Patricia A. [SINTEF Materials and Chemistry, Forskningsveien 1, NO-0314 Oslo (Norway); Persson, Clas; Finstad, Terje G. [Centre for Materials Science and Nanotechnology (SMN), University of Oslo, P.O.B. 1126 Blindern, NO-0318 Oslo (Norway); Department of Physics, University of Oslo, P.O.B. 1048 Blindern, NO-0316 Oslo (Norway); Løvvik, Ole Martin [Department of Physics, University of Oslo, P.O.B. 1048 Blindern, NO-0316 Oslo (Norway); SINTEF Materials and Chemistry, Forskningsveien 1, NO-0314 Oslo (Norway)

    2016-03-28

    Energy filtering has been suggested by many authors as a means to improve thermoelectric properties. The idea is to filter away low-energy charge carriers in order to increase Seebeck coefficient without compromising electronic conductivity. This concept was investigated in the present paper for a specific material (ZnSb) by a combination of first-principles atomic-scale calculations, Boltzmann transport theory, and experimental studies of the same system. The potential of filtering in this material was first quantified, and it was as an example found that the power factor could be enhanced by an order of magnitude when the filter barrier height was 0.5 eV. Measured values of the Hall carrier concentration in bulk ZnSb were then used to calibrate the transport calculations, and nanostructured ZnSb with average grain size around 70 nm was processed to achieve filtering as suggested previously in the literature. Various scattering mechanisms were employed in the transport calculations and compared with the measured transport properties in nanostructured ZnSb as a function of temperature. Reasonable correspondence between theory and experiment could be achieved when a combination of constant lifetime scattering and energy filtering with a 0.25 eV barrier was employed. However, the difference between bulk and nanostructured samples was not sufficient to justify the introduction of an energy filtering mechanism. The reasons for this and possibilities to achieve filtering were discussed in the paper.

  12. Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory

    International Nuclear Information System (INIS)

    Zhang Ting; Song Zhitang; Liu Bo; Feng Songlin

    2008-01-01

    Te-free environmental friendly Si x Sb 100−x phase-change materials are investigated. The binary material, which is compatible with the complementary metal-oxide-semiconductor manufacturing process, is outstanding in various properties. Si x Sb 100−x shows a much better data retention as compared with Ge 2 Sb 2 Te 5 . The density change for Si 10 Sb 90 and Si 16 Sb 84 is only about 3% and 3.8%, respectively. The failure times for Si 10 Sb 90 and Si 16 Sb 84 are about 10 3 and 10 6 times longer than that of Ge 2 Sb 2 Te 5 at 110 °C. The crystallization temperature of Si x Sb 100−x increases with silicon content within the material. Si x Sb 100−x materials are good candidates for the phase-change memory applications

  13. {sup 197}Au irradiation study of phase-change memory cell with GeSbTe alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Liangcai; Song, Zhitang; Lian, Jie; Rao, Feng; Liu, Bo; Song, Sannian; Liu, Weili; Feng, Songlin [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Zhou, Xilin; Liu, Xuyan [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100080 (China)

    2010-10-15

    A {sup 197}Au ion source was used to irradiate a Ge{sub 2}Sb{sub 2}Te{sub 5}-alloy-based phase-change memory (PCM) cell to study the ion-irradiation effect on the properties of the cell. The PCM devices with the tungsten (W) heating electrode of 260 nm diameter were fabricated by 0.18 {mu}m complementary metal-oxide-semiconductor (CMOS) technology. Four different doses (10{sup 10}, 10{sup 11}, 10{sup 12}, and 5 x 10{sup 12} ions/cm{sup 2}, respectively) were applied to irradiate the PCM cell. The samples before and after irradiation were characterized by current-voltage and resistance measurements at room temperature. It is found that the cell properties (resistance value of the amorphous and crystalline states, threshold voltage, and current for phase transition, etc.) have hardly changed, even for the sample irradiated up to 10{sup 12} ions/cm{sup 2} dose, and the cell still has good set-reset operation ability (above 10{sup 5} cycles). Furthermore, the resistance ratio remains at 1000 even after 10{sup 5} cycles of the set-reset operation. The results show the PCM cell with Ge{sub 2}Sb{sub 2}Te{sub 5} alloy has a strong ion-irradiation tolerance. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  14. Mechano-luminescence studies of nano ZnMgAl10O17:Eu phosphor under UV irradiation

    Science.gov (United States)

    Verma, Akshkumar; Verma, Ashish; Panda, Maheswar

    2018-05-01

    ZnMgAl10O17:Eu nano phosphors were prepared successfully, using the combustion route by employing urea as a fuel. The structural, and Morphological, properties were measured using x-ray diffraction (XRD) Scanning electron microscopy (SEM) transition electron microscopy. The BET surface area of sample were found to be of ˜13.92 m2/g. The ML (Mechano-luminescence) were measured to the home made instrument. The phosphor showed more strong and high ML intensity to the without UV irradiated material. Therefore ZnMgAl10O17:Eu2+ phosphor may use as a damage sensor and dosimetry material. The ML emission spectra of the Zn0.99MgAl10O17:Eu0.01 phosphor showed the characteristic Eu2+ emission peaks ˜453nm (blue) originating from the transitions 4f65d1→4f7, Therefore ZnMgAl10O17:Eu2+ phosphor may use as a blue phosphor material.

  15. Atomic structure and electronic properties of the SixSb100-x phase-change memory material

    DEFF Research Database (Denmark)

    Verma, Ashok K.; Modak, Paritosh; Svane, Axel

    2011-01-01

    The electronic and structural properties of SixSb100-x (x∼16) materials are investigated using first-principles molecular dynamics simulations. Crystalline-liquid-amorphous phase transitions are examined and remarkable changes in the local structure around the Si atoms are found. The average Si...... coordination number 6 (3 long + 3 short Si-Sb bonds) of the crystalline phase changes to 4 (3 long Si-Sb + 1 short Si-Si bonds) by preserving three Si-Sb bonds in both the liquid and the amorphous phases. In the amorphous phase ∼90% of the Si atoms are fourfold coordinated compared to 40% in the liquid....... The electronic density of states is metal-like in both the crystalline and the liquid phases, but it exhibits a pseudogap at the Fermi level in the amorphous phase, reflecting the strong abundance of fourfold coordinated Si in the amorphous phase....

  16. Carbon Leakage in the Primary Aluminium Sector: What evidence after 6 1/2 years of the EU ETS? - Working Paper No. 2012-12

    International Nuclear Information System (INIS)

    Sartor, Oliver

    2012-02-01

    This paper provides an econometric analysis of the evidence of carbon leakage from the European primary aluminium industry during the first 6 1/2 years of the EU ETS. The findings suggest that while rising electricity prices have played a critical role in reducing the competitiveness of EU primary aluminium smelting in recent years, no evidence of carbon leakage can be detected so far. Other factors, including rising primary energy prices and changes in EU competition law regarding long term contracts, appear to be more important factors explaining the rise in net imports of primary aluminium and the gradual closure of a number of European primary smelters during the past 6 1/2 years. Our results suggest that the carbon leakage debate in this sector may therefore be better seen in terms of not accelerating the decline of the industry in Europe, rather than preventing it, and that any state-aid to the industry to prevent carbon leakage should therefore be applied accordingly. (author)

  17. Charge compensation mechanisms in favor of the incorporation of the Eu3+ ion into the ZnO host lattice

    Science.gov (United States)

    Baira, M.; Bekhti-Siad, A.; Hebali, K.; Bouhani-Benziane, H.; Sahnoun, M.

    2018-05-01

    Eu3+ doped phosphors with charge compensation are potential candidates of red emitting phosphors for lamp applications. Charge compensation improves the luminescence performance of the material. The charge compensation can most probably be achieved by three possible mechanisms: (a) two Zn2+ ions are replaced by one Eu3+ ions and one monovalent cation, 2Zn2+ →Eu3++ Li+, where Li+ is acting as a charge compensator; (b) the charge compensation is provided by a zinc vacancy (VZn) defects, 3Zn2+ → 2Eu3++ VZn, the subscript Zn denotes an ion in a normal zinc site in the lattice; (c) two Zn2+ ions are replaced by one Eu3+ ions with the presence of interstitial oxygen (Oi), 2Zn2+ → 2Eu3++ Oi. Electronic structures of the crystals corresponding to the three models are evaluated by the first-principles quantum mechanical calculations based on the density functional theory. It is found that the charge compensator defects make Eu3+ doping in ZnO energetically more favorable. They break the local symmetry around the Eu3+ ion and lead to deep states below the empty upper band, the conduction band that could facilitate intra-4f shell transitions, which can obviously improve the emission intensity of Eu3+-doped ZnO. Therefore, the effect of these defects on the host crystals electronic band states relative to the Eu3+ states is reported, since both electron transfer and electronically energy transfer processes enhance the performance of optoelectronic devices based on this material. These theoretical insights are helpful for designing rare-earth doped oxide materials with high photoluminescence (PL) performance.

  18. Phase stability and lattice thermal conductivity reduction in CoSb{sub 3} skutterudites, doped with chalcogen atoms

    Energy Technology Data Exchange (ETDEWEB)

    Battabyal, M., E-mail: manjusha.battabyal@project.arci.res.in; Priyadarshini, B.; Gopalan, R. [International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), IIT M Research Park, Taramani, Chennai-600113 (India); Pradipkanti, L.; Satapathy, Dillip K. [Department of Physics, Indian Institute of Technology Madras, Chennai-600036 (India)

    2016-07-15

    We report a significant reduction in the lattice thermal conductivity of the CoSb{sub 3} skuttertudites, doped with chalcogen atoms. Te/Se chalcogen atoms doped CoSb{sub 3} skutterudite samples (Te{sub 0.1}Co{sub 4}Sb{sub 12}, Se{sub 0.1}Co{sub 4}Sb{sub 12}, Te{sub 0.05}Se{sub 0.05}Co{sub 4}Sb{sub 12}) are processed by ball milling and spark plasma sintering. X-ray diffraction data combined with energy dispersive X-ray spectra indicate the doping of Te/Se chalcogen atoms in the skutterudite. The temperature dependent X-ray diffraction confirms the stability of the Te/Se doped CoSb{sub 3} skutterudite phase and absence of any secondary phase in the temperature range starting from 300 K to 773 K. The Raman spectroscopy reveals that different chalcogen dopant atoms cause different resonant optical vibrational modes between the dopant atom and the host CoSb{sub 3} skutterudite lattice. These optical vibrational modes do scatter heat carrying acoustic phonons in a different spectral range. It was found that among the Te/Se chalcogen atoms, Te atoms alter the host CoSb{sub 3} skutterudite lattice vibrations to a larger extent than Se atoms, and can potentially scatter more Sb related acoustic phonons. The Debye model of lattice thermal conductivity confirms that the resonant phonon scattering has important contributions to the reduction of lattice thermal conductivity in CoSb{sub 3} skutterudites doped with Te/Se chalcogen atoms. Lattice thermal conductivity ∼ 0.9 W/mK at 773 K is achieved in Te{sub 0.1}Co{sub 4}Sb{sub 12} skutterudites, which is the lowest value reported so far in CoSb{sub 3} skutterudites, doped with single Te chalcogen atom.

  19. High pressure monoclinic phases of Sb{sub 2}Te{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Souza, S.M.; Poffo, C.M.; Triches, D.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Lima, J.C. de, E-mail: fsc1jcd@fisica.ufsc.br [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, S/N, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Polian, A.; Gauthier, M. [Physique des Milieux Denses, IMPMC, CNRS-UMR 7590, Universite Pierre et Marie Curie-Paris 6, 4 Place Jussieu, 75252 Paris Cedex 05 (France)

    2012-09-15

    The effect of pressure on nanostructured rhombohedral {alpha}-Sb{sub 2}Te{sub 3} (phase I) was investigated using X-ray diffraction (XRD) and Raman spectroscopy (RS) up to 19.2 and 25.5 GPa, respectively. XRD patterns showed two new high pressure phases (named phases II and III). From a Rietveld refinement of XRD patterns of {alpha}-Sb{sub 2}Te{sub 3}, the unit cell volume as a function of pressure was obtained and the values were fitted to a Birch-Murnaghan equation of state (BM-EOS). The best fit was obtained for bulk modulus B{sub 0}=36.1{+-}0.9 GPa and its derivative B{sub 0}{sup Prime }=6.2{+-}0.4 (not fixed). Using the refined structural data for {alpha}-Sb{sub 2}Te{sub 3}, for pressures up to 9.8 GPa, changes in the angle of succession [Te-Sb-Te-Sb-Te], in the interaromic distances of Sb and Te atoms belonging to this angle of succession and in the interatomic distances of atoms located on the c axis were examined. This analysis revealed an electronic topological transition (ETT) along the a and c axes at close to 3.7 GPa. From the RS spectra, the full widths at half maximum (FWHM) of the Raman active modes of {alpha}-Sb{sub 2}Te{sub 3} were plotted as functions of pressure and showed an ETT along the a and c axes at close to 3.2 GPa. The XRD patterns of phases II and III were well reproduced assuming {beta}-Bi{sub 2}Te{sub 3} and {gamma}-Bi{sub 2}Te{sub 3} structures similar to those reported in the literature for {alpha}-Bi{sub 2}Te{sub 3}.

  20. Ti-Sb-Te alloy: a candidate for fast and long-life phase-change memory.

    Science.gov (United States)

    Xia, Mengjiao; Zhu, Min; Wang, Yuchan; Song, Zhitang; Rao, Feng; Wu, Liangcai; Cheng, Yan; Song, Sannian

    2015-04-15

    Phase-change memory (PCM) has great potential for numerous attractive applications on the premise of its high-device performances, which still need to be improved by employing a material with good overall phase-change properties. In respect to fast speed and high endurance, the Ti-Sb-Te alloy seems to be a promising candidate. Here, Ti-doped Sb2Te3 (TST) materials with different Ti concentrations have been systematically studied with the goal of finding the most suitable composition for PCM applications. The thermal stability of TST is improved dramatically with increasing Ti content. The small density change of T0.32Sb2Te3 (2.24%), further reduced to 1.37% for T0.56Sb2Te3, would greatly avoid the voids generated at phase-change layer/electrode interface in a PCM device. Meanwhile, the exponentially diminished grain size (from ∼200 nm to ∼12 nm), resulting from doping more and more Ti, enhances the adhesion between phase-change film and substrate. Tests of TST-based PCM cells have demonstrated a fast switching rate of ∼10 ns. Furthermore, because of the lower thermal conductivities of TST materials, compared with Sb2Te3-based PCM cells, T0.32Sb2Te3-based ones exhibit lower required pulse voltages for Reset operation, which largely decreases by ∼50% for T0.43Sb2Te3-based ones. Nevertheless, the operation voltages for T0.56Sb2Te3-based cells dramatically increase, which may be due to the phase separation after doping excessive Ti. Finally, considering the decreased resistance ratio, TixSb2Te3 alloy with x around 0.43 is proved to be a highly promising candidate for fast and long-life PCM applications.

  1. First-principles study of the amorphous In3SbTe2 phase change compound

    Science.gov (United States)

    Los, Jan H.; Kühne, Thomas D.; Gabardi, Silvia; Bernasconi, Marco

    2013-11-01

    Ab initio molecular dynamics simulations based on density functional theory were performed to generate amorphous models of the phase change compound In3SbTe2 by quenching from the melt. In-Sb and In-Te are the most abundant bonds with only a minor fraction of Sb-Te bonds. The bonding geometry in the amorphous phase is, however, strongly dependent on the density in the range 6.448-5.75 g/cm3 that we investigated. While at high density the bonding geometry of In atoms is mostly octahedral-like as in the cubic crystalline phase of the ternary compound In3SbTe2, at low density we observed a sizable fraction of tetrahedral-like geometries similar to those present in the crystalline phase of the two binary compounds InTe and InSb that the ternary system can be thought to be made of. We show that the different ratio between octahedral-like and tetrahedral-like bonding geometries has fingerprints in the optical and vibrational spectra.

  2. One-dimensional zinc selenophosphates: A_2ZnP_2Se_6 (A = K, Rb, Cs)

    International Nuclear Information System (INIS)

    Haynes, Alyssa S.; Lee, Katherine; Kanatzidis, Mercouri G.

    2016-01-01

    The new compounds A_2ZnP_2Se_6 (A = K, Rb, Cs) were synthesized via molten salt flux syntheses. The crystals feature one-dimensional "1/_∞[ZnP_2Se_6]"2"- chains charge balanced by alkali metal ions between the chains. K_2ZnP_2Se_6 crystallizes in the monoclinic space group P2_1/c; cell parameters a = 12.537(3) Aa, b = 7.2742(14) Aa, c = 14.164(3) Aa, β = 109.63(3) , Z = 4, and V = 1216.7(4) Aa"3. Rb_2ZnP_2Se_6 and Cs_2ZnP_2Se_6 are isotypic, crystallizing in the triclinic space group P anti 1. Rb_2ZnP_2Se_6 has cell parameters of a = 7.4944(15) Aa, b = 7.6013(15) Aa, c = 12.729(3) Aa, α = 96.57(3) , β = 105.52(3) , γ = 110.54(3) , Z = 2, and V = 636.6(2) Aa"3. Cs_2ZnP_2Se_6 has cell parameters of a = 7.6543(6) Aa, b = 7.7006(6) Aa, c = 12.7373(11) Aa, α = 97.007(7) , β = 104.335(7) , γ = 109.241(6) , Z = 2, and V = 669.54(10) Aa"3. (Copyright copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Column Chromatography Of Co(II), Zn(II) And Eu(III) Using Pistachio Shell And Different Mobile Phases

    International Nuclear Information System (INIS)

    Abdel-Fattah, A.A.

    2009-01-01

    Pistachio shell particles (0.5-1 mm) have been applied as the stationary phase for studying the column chromatography of Co(II), Zn(II) and Eu(III) at room temperature; 26 + - 1 oC. This solid sorbent has been characterized by thermogravimetric analysis, infra-red spectroscopy and X-ray diffraction. Its surface area and percent of swelling have been also determined. Different eluting agents have been used for eluting the sorbed elements. The elution curves have been done from which the distribution coefficients (K d ), number of theoretical plates (N) and heights equivalent to theoretical plates (H) have been determined. Column performance studies have been conducted for a representative system under certain experimented conditions and Van Deemter equation has been applied. Thermodynamic studies have been applied and thermodynamic functions ( δG 0 ,δH 0 andδ S 0 ) have been calculated for this representative system by determining K d at three different room temperatures (18, 26 and 37 + - 1o C).

  4. Effect of structural evolution of ZnO/HfO2 nanocrystals on Eu2+/Eu3+ emission in glass-ceramic waveguides for photonic applications

    Science.gov (United States)

    Ghosh, Subhabrata; N, Shivakiran Bhaktha B.

    2018-06-01

    Eu-doped 70SiO2–23HfO2–7ZnO (mol%) glass-ceramic waveguides have been fabricated by sol-gel method as a function of heat-treatment temperatures for on-chip blue-light emitting source applications. Structural evolution of spherical ZnO and spherical as well as rod-like HfO2 nanocrystalline structures have been observed with heat-treatments at different temperatures. Initially, in the as-prepared samples at 900 ◦C, both, Eu2+ as well as Eu3+ ions are found to be present in the ternary matrix. With controlled heat-treatments of up to 1000 ◦C for 2 h, local environment of Eu-ions become more crystalline in nature and the reduction of Eu3+ to Eu2+ takes place in such ZnO/HfO2 crystalline environments. In these ternary glass-ceramic waveguides, heat-treated at higher temperatures, the blue-light emission characteristic, which is the signature of 4f 65d \\to 4f 7 energy level transition of Eu2+ ions is found to be greatly enhanced. The as-prepared glass-ceramic waveguides exhibit a propagation loss of 0.4 ± 0.2 dB cm‑1 at 632.8 nm. Though the propagation losses increase with the growth of nanocrystals, the added functionalities achieved in the optimally heat-treated Eu-doped 70SiO2–23HfO2–7ZnO (mol%) waveguides, make them a viable functional optical material for the fabrication of on-chip blue-light emitting sources for integrated optic applications.

  5. Growth and electrical characterization of Zn-doped InAs and InAs{sub 1-x}Sb{sub x}

    Energy Technology Data Exchange (ETDEWEB)

    Venter, A., E-mail: andre.venter@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth (South Africa); Shamba, P.; Botha, L.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth (South Africa)

    2009-06-01

    The electrical properties of Zn doped InAs and InAsSb layers grown on semi-insulating GaAs by metal organic vapour phase epitaxy, using dimethyl zinc as the p-type dopant source, have been studied. The influence of dopant flow rate, V/III ratio and substrate orientation on the electrical properties of these InAs and InAs{sub 1-x}Sb{sub x} layers have been studied at a few appropriate growth temperatures. A promising group V source, tertiary butyl arsenic was used as an alternative to arsenic hydride in the case of InAs growth. The electrical properties of the InAs and InAs{sub 1-x}Sb{sub x} epitaxial layers were mainly studied by the Hall effect. However, surface accumulation in these materials results in deceptive Hall results being extracted. A two layer model (assuming the layer to consist of two parallel conducting paths viz. surface and bulk) has therefore been used to extract sensible transport properties. In addition, conventional Hall measurements ignores the high electron to hole mobility ratio in InAs and InAsSb leading to erroneous transport properties.

  6. Near-UV and blue wavelength excitable Mg{sub 0.6}Ca{sub 2.16}Mo{sub 0.2}W{sub 0.8}O{sub 6}: Eu{sub 0.12}{sup 3+}/Na{sub 0.12}{sup +} high efficiency red phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Khanna, A. [Smart Lighting Engineering Research Center, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States); Electrical Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States); Dutta, P.S., E-mail: duttap@rpi.edu [Smart Lighting Engineering Research Center, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States); Electrical Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States)

    2015-05-15

    Red phosphors with narrow emission around 615 nm (with FWHM~5–10 nm) having chemical compositions of A{sub 0.6}Ca{sub 2.16}Mo{sub 0.2}W{sub 0.8}O{sub 6}: Eu{sub 0.12}{sup 3+}/Na{sub 0.12}{sup +} (A=Mg, Sr) have been found to exhibit the highest luminescence amongst the molybdate–tungstate family when excited by sources in the 380–420 nm wavelength range. Thus they are most suitable for enhancing color rendering index and lowering color temperature in phosphor converted white LEDs (pc-WLEDs) with near-UV/blue LED excitation sources. The excitation band edge in the near UV/blue wavelength in the reported phosphor has been attributed to the coordination environment of the transition metal ion (Mo{sup 6+}, W{sup 6+}) and host crystal structure. Furthermore the quantum efficiency of the phosphors has been enhanced by adjusting activator concentration, suitable compositional alloying using substitutional alkaline earth metal cations and charge compensation mechanisms. - Graphical abstract: The charge transfer excitation of orthorhombic Mg{sub 0.6}Ca{sub 2.16}Mo{sub 0.2}W{sub 0.8}O{sub 6}: Eu{sub 0.12}{sup 3+}/Na{sub 0.12}{sup +} is significantly higher than tetragonal CaMoO{sub 4}: Eu{sup 3+} phosphors making Mg{sub 0.6}Ca{sub 2.16}Mo{sub 0.2}W{sub 0.8}O{sub 6}: Eu{sub 0.12}{sup 3+}/Na{sub 0.12}{sup +} prime candidates for fabrication of warm white phosphor-converted LEDs. - Highlights: • LED excitable Mg{sub 0.6}Ca{sub 2.16}Mo{sub 0.2}W{sub 0.8}O{sub 6}: Eu{sub 0.12}{sup 3+}/Na{sub 0.12}{sup +} phosphors were synthesized. • These phosphors are 10 times more intense than CaMoO{sub 4}: Eu{sup 3+} red phosphors. • Their intensity and efficiency were enhanced by materials optimization techniques. • Such techniques include compositional alloying, charge compensation, etc.

  7. The ‘sub’ metallide oxide hydrides Sr{sub 21}Si{sub 2}O{sub 5}H{sub 12+x} and Ba{sub 21}M{sub 2}O{sub 5}H{sub 12+x} (M = Zn, Cd, Hg, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi)

    Energy Technology Data Exchange (ETDEWEB)

    Jehle, Michael; Hoffmann, Anke [Institut für Anorganische und Analytische Chemie, Albert-Ludwigs-Universität Freiburg, Albertstr. 21, D-79104 Freiburg (Germany); Kohlmann, Holger [Institut für Anorganische Chemie, Universität Leipzig, Johannisallee 29, D-04103 Leipzig (Germany); Scherer, Harald [Institut für Anorganische und Analytische Chemie, Albert-Ludwigs-Universität Freiburg, Albertstr. 21, D-79104 Freiburg (Germany); Röhr, Caroline, E-mail: caroline@ruby.chemie.uni-freiburg.de [Institut für Anorganische und Analytische Chemie, Albert-Ludwigs-Universität Freiburg, Albertstr. 21, D-79104 Freiburg (Germany)

    2015-02-25

    Highlights: • The sub metallide oxide hydrides (Sr/Ba){sub 21}M{sub 2}O{sub 5}H{sub 12+x} were prepared for 14 M elements. • M covers a wide range of elements, from the Zn group to the pentels. • The ionic partial structure contains isolated M anions and suboxide clusters [O{sub 5}A{sub 18}]. • The H-content was determined by neutron diffraction and {sup 1}H/{sup 2}D MAS-NMR spectroscopy. • Band structure calculations support the H/D content and distribution. - Abstract: The title compounds sporting a great variety of anions M of different formal charges have been synthesized from melts of the composition A:M:O:H/D = 21:2:5:24, using BaH{sub 2}/SrH{sub 2} as hydrogen sources. All phases were characterized by means of single crystal X-ray data [cubic, space group Fd3{sup ¯}m; Sr{sub 21}Si{sub 2}O{sub 5}H{sub 12+x}: a = 1911.90(1) pm, R1 = 0.0201; for the barium phases with Zn (a = 2041.7(3) pm, R1 = 0.077), Cd (a = 2063.3(1) pm, R1 = 0.051), Hg (a = 2050.7(1) pm, R1 = 0.059), In (a = 2060.7(1) pm, R1 = 0.101), Tl (a = 2068.1(10) pm, R1 = 0.0485), Si (a = 2033.6(1) pm, R1 = 0.045), Ge (a = 2035.6(1) pm, R1 = 0.037), Sn (a = 2053.2(2) pm, R1 = 0.054), Pb (a = 2059.7(1) pm, R1 = 0.056), As (a = 2023.0(3) pm, R1 = 0.087), Sb (a = 2041.9(1) pm, R1 = 0.067) and Bi (a = 2045.9(1) pm, R1 = 0.075)]. Neutron powder diffraction data collected for the Ba silicide (both H and D compound) were refined by the Rietveld method (a = 2037.0(1), R{sub p} = 0.0173; wR{sub p} = 0.0304, R(F{sup 2}) = 0.086). The statistically occupied (H/D)(1) site 96g, which corresponds to the carbon position inSr{sub 21}Si{sub 2}O{sub 5}C{sub 6}, together with two further sparsely occupied sites (H/D)(2,3), yields the overall composition Ba{sub 21}Si{sub 2}O{sub 5}D{sub 14}. The hydrogen content, its chemical character and the distribution among the three H/D positions was evaluated by {sup 1}H/{sup 2}H MAS NMR spectroscopy for the Si, Ge and Sb compound. The crystal structure exhibits two

  8. Microstructure and heat resistance of Mg-Al-Zn alloys containing metastable phase

    International Nuclear Information System (INIS)

    Kim, Jeong-Min; Park, Bong-Koo; Jun, Joong-Hwan; Shin, Keesam; Kim, Ki-Tae; Jung, Woon-Jae

    2007-01-01

    In this research microstructural studies have been made on cast specimens of AZ91 base alloys containing various amounts of Zn. As the amount of Zn addition increased up to 2%, any new Zn-containing phase did not appear while the Zn content in Mg 17 Al 12 phase continuously increased. A quasi-crystalline phase started to form at Mg 17 Al 12 phase when the added Zn content was about 3 wt.%. The tensile strength and elongation of the alloys at 175 deg. C were observed to increase significantly with increasing Zn content. The quasi-crystalline phase was found to be stable up to 300 deg. C, based on scanning electron microscopy examinations of the specimens heated at different temperatures for 24 h

  9. Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs{sub 2} (A = K, Rb)

    Energy Technology Data Exchange (ETDEWEB)

    Azam, Sikander; Khan, Saleem Ayaz [New Technologies—Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Goumri-Said, Souraya, E-mail: Souraya.Goumri-Said@chemistry.gatech.edu [School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400 (United States)

    2015-10-15

    Highlights: • Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) using the full potential linear augmented plane wave method and the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices.

  10. Heterogeneous nucleation of Mg2Si on Sr11Sb10 nucleus in Mg–x(3.5, 5 wt.%)Si–1Al alloys

    International Nuclear Information System (INIS)

    Wang, Hui-Yuan; Chen, Lei; Liu, Bo; Li, Xiao-Ran; Wang, Jin-Guo; Jiang, Qi-Chuan

    2012-01-01

    After combined additions of Sr and Sb, most primary Mg 2 Si crystals in Mg–3.5Si–1Al and Mg–5Si–1Al alloys transformed from equiaxed-dendritic shapes to octahedral morphologies; while eutectic phases also changed from Chinese script to short rod-shapes. The mechanisms of complex modification of Sr and Sb were attributed to the heterogeneous nucleation of primary Mg 2 Si on Sr 11 Sb 10 nucleus, together with change in growth manners caused by incorporation of Sb in Mg 2 Si crystals. -- Highlights: ► The Sr 11 Sb 10 is the heterogeneous nucleation of primary Mg 2 Si in Mg–3.5Si–1Al alloys. ► Some Sb atoms were incorporated by substituting Si which changed growth manners of primary Mg 2 Si. ► Primary Mg 2 Si transformed from equiaxed-dendritic to octahedral after modification. ► Eutectic phases changed from Chinese script to short rod-shapes after modification.

  11. A new quaternary photoluminescence enhancement system of Eu-N-(o-vanillin)-1,8-diaminonaphthalene-1,10-phenanthroline-Zn and its application in determining trace amounts of europium and zinc.

    Science.gov (United States)

    Zhou, Yunshan; Ahmad, Waqar; An, Yugang; Zhang, Lijuan; Zheng, Xiaorui

    2014-08-01

    A new sensitive quaternary photoluminescence enhancement system has been successfully developed to determine trace amounts of Eu(3+) and Zn(2+). The photoluminescence intensity of Eu - N-(o-vanilin)-1,8-diaminonaphthalene systems was greatly increased by the addition of specific concentrations of 1, 10-phenanthroline and Zn(2+). The excitation and emission wavelengths were 274 and 617 nm, respectively. Under optimal system conditions, the photoluminescence intensity showed a linear response toward Eu(3+) in the range of 5.0 × 10(-6)  ~ 2.0 × 10(-5)  M with a limit of detection (= 2.2 × 10(-9)  M) and the photoluminescence intensity of the system decreased linearly by increasing the Zn(2+) concentration in the range of 5.0 × 10(-8)  ~ 1.0 × 10(-6)  M with a limit of detection (= 8.8 × 10(-11)  M). This system was successfully applied for the determination of trace amounts of Eu(3+) in a high purity La2O3 matrix and in the synthetic rare earth oxide mixture, and of Zn(2+) in a high purity Mg(NO3)2 · 6H2O matrix and in synthetic coexisting ionic matrixes. The energy transfer mechanism, photoluminescence enhancement of the system and interference of other lanthanide ions and common coexisting ions were also studied in detail. Copyright © 2013 John Wiley & Sons, Ltd.

  12. Phase stabilization in transparent Lu2O3:Eu ceramics by lattice expansion

    Science.gov (United States)

    Seeley, Z. M.; Dai, Z. R.; Kuntz, J. D.; Cherepy, N. J.; Payne, S. A.

    2012-11-01

    Gadolinium lutetium oxide transparent ceramics doped with europium (Gd,Lu)2O3:Eu were fabricated via vacuum sintering and hot isostatic pressing (HIP). Nano-scale starting powder with the composition GdxLu1.9-xEu0.1O3 (x = 0, 0.3, 0.6, 0.9, 1.0, and 1.1) were uniaxially pressed and sintered under high vacuum at 1625 °C to obtain ˜97% dense structures with closed porosity. Sintered compacts were then subjected to 200 MPa argon gas at temperatures between 1750 and 1900 °C to reach full density. It was observed that a small portion of the Eu3+ ions were exsolved from the Lu2O3 cubic crystal lattice and concentrated at the grain boundaries, where they precipitated into a secondary monoclinic phase creating optical scattering defects. Addition of Gd3+ ions into the Lu2O3 cubic lattice formed the solid solution (Gd,Lu)2O3:Eu and stretched the lattice parameter allowing the larger Eu3+ ions to stay in solid solution, reducing the secondary phase and improving the transparency of the ceramics. Excess gadolinium, however, resulted in a complete phase transformation to monoclinic at pressures and temperatures sufficient for densification. Light yield performance was measured and all samples show equal amounts of the characteristic Eu3+ luminescence, indicating gadolinium addition had no adverse effect. This material has potential to improve the performance of high energy radiography devices.

  13. Structural characterization of ZnTe grown by atomic-layer-deposition regime on GaAs and GaSb (100) oriented substrates

    Energy Technology Data Exchange (ETDEWEB)

    Castillo-Ojeda, Roberto Saúl [Universidad Politécnica de Pachuca (Mexico); Díaz-Reyes, Joel; Peralta-Clara, María de la Cruz; Veloz-Rendón, Julieta Salomé, E-mail: joel_diaz_reyes@hotmail.com [Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional, Tlaxcala, (Mexico); Galván-Arellano, Miguel [Centro de Investigación y de Estudios Avanzados, Instituto Politécnico Nacional (Mexico); Anda-Salazar, Francisco de [Instituto de Investigación en Comunicación Óptica, Universidad Autónoma de San Luis Potosí (Mexico); Contreras-Rascon, Jorge Indalecio [Departamento de Física, Universidad de Sonora (Mexico)

    2017-10-15

    This work presents the characterization of ZnTe nano layers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes possible the growth of atomic layers in a reactor where the atmosphere is high-purity hydrogen. ZnTe was grown simultaneously on GaAs and GaSb at the same run, allowing, a comparison between the effects produced by the superficial processes due to the different used substrates, thereby eliminating possible unintended changes of growth parameters. Nano layers on GaSb maintained their shiny appearance even at temperatures near 420°C. It was found that for exposure times below 2.5 s there was not growth on GaAs, while for GaSb the shortest time was 1.5 s at 385°C. By HRXRD the peak corresponding to (004) diffraction plane of ZnTe was identified and investigated, the FWHM resulted very wide (600-800 arcsec) indicating a highly distorted lattice mainly due to mosaicity. Raman scattering shows the peak corresponding to LO-ZnTe, which is weak and slightly shifted in comparison with the reported for the bulk ZnTe at 210 cm{sup -1}. Additionally, the measurements suggest that the crystalline quality have a dependence with the growth temperature. (author)

  14. Photo-induced effects of the virgin Ge{sub 24.9}Sb{sub 11.6}S{sub 63.5} film

    Energy Technology Data Exchange (ETDEWEB)

    Knotek, P., E-mail: petr.knotek@upce.cz [University of Pardubice, Faculty of Chemical Technology, Department of General and Inorganic Chemistry, Studentska 573, 532 10 Pardubice (Czech Republic); Tichy, L. [Institute of Macromolecular Chemistry, AS CR, Heyrovskeho sq. 2, 162 06 Prague (Czech Republic); Kutalek, P. [University of Pardubice, Faculty of Chemical Technology, Joint Laboratory of Solid State Chemistry of Institute of Macromolecular Chemistry of Academy of Sciences of the Czech Republic, v.v.i., and University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic)

    2015-11-02

    Amorphous Ge{sub 24.9}Sb{sub 11.6}S{sub 63.5} film was prepared through thermal evaporation. A blue shift of the optical band gap by approximately 100 meV was observed as a result of self-bleaching process of protected film aged for two years. The magnitude of the light induced blue shift of the optical band of the virgin film is primarily dependent on the light penetration depth and on the light intensity. The kinetics of photo-bleaching follows the stretch exponential function with a formal rate of bleaching depending on the light intensity while the saturated state is independent from the light intensity. The far infrared spectra indicate that ageing, illumination by over-band gap-photons and annealing of the virgin film are mainly accompanied by the film network ordering. Illumination by UV light photons led to a blue shift accompanied by the significant oxidation as evidenced by the results of the far infrared spectra and the energy dispersive analysis. - Highlights: • “Giant” photo-induced effects in virgin Ge{sub 24.9}Sb{sub 11.6}S{sub 63.5} film • The role of the film thickness, the wavelengths and intensity of excitation photons • The changes of the photo-sensitivity due to the self-ageing process • The high-intensity illumination (> 10 W/cm{sup 2}) led to the different processes.

  15. Electronic Structure and Optical Properties Of EuIn2P2

    KAUST Repository

    Singh, Nirpendra

    2011-10-25

    The electronic structures and, optical and magneto‐optical properties of a newly found Zintl compound EuIn2P2 have been investigated within the density‐functional theory using the highly precise full‐potential linear‐augmented‐plane‐wave method. Results of detailed investigation of the electronic structure and related properties are reported.

  16. Analytisch-chemische aspecten van de bepaling van As, Ca, Cd, Sb, Sn, Pb, Zn in MVS-filterdestruaten met ICP-MS

    NARCIS (Netherlands)

    Velde-Koerts T van der; Lesquillier AI; Ritsema R; LAC

    1995-01-01

    In dit onderzoek werd een ICP-MS-methode ontwikkeld voor de bepaling van Ca, Zn, As, Cd, Sb, Sn en Pb in filterdestruaten. De onderste analysegrens is 30 ng/l Sb, 60 ng/l Cd, 200 ng/l As, 300 ng/l Sn, 400 ng/l Pb, 4 mug/l Zn en 20 mug/l Ca ; de precisie is beter dan 7% RSD voor Ca, 4% RSD voor

  17. SeZnSb alloy and its nano tubes, graphene composites properties

    Directory of Open Access Journals (Sweden)

    Abhay Kumar Singh

    2013-04-01

    Full Text Available Composite can alter the individual element physical property, could be useful to define the specific use of the material. Therefore, work demonstrates the synthesis of a new composition Se96-Zn2-Sb2 and its composites with 0.05% multi-walled carbon nano tubes and 0.05% bilayer graphene, in the glassy form. The diffused amorphous structure of the multi walled carbon nano tubes and bilayer gaphene in the Se96-Zn2-Sb2 alloy have been analyzed by using the Raman, X-ray photoluminescence spectroscopy, Furrier transmission infrared spectra, photoluminescence, UV/visible absorption spectroscopic measurements. The diffused prime Raman bands (G and D have been appeared for the multi walled carbon nano tubes and graphene composites, while the X-ray photoluminescence core energy levels peak shifts have been observed for the composite materials. Subsequently the photoluminescence property at room temperature and a drastic enhancement (upto 80% in infrared transmission percentage has been obtained for the bilayer graphene composite, along with optical energy band gaps for these materials have been evaluated 1.37, 1.39 and 1.41 eV.

  18. Particle size, morphology and color tunable ZnO:Eu{sup 3+} nanophosphors via plant latex mediated green combustion synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Chandrasekhar, M. [Prof. C.N.R. Rao Centre for Advanced Materials, Tumkur University, Tumkur 572 103 (India); Department of Physics, Acharya Institute of Technology, Bangalore 560 107 (India); Nagabhushana, H., E-mail: bhushanvlc@gmail.com [Prof. C.N.R. Rao Centre for Advanced Materials, Tumkur University, Tumkur 572 103 (India); Sharma, S.C. [B.S. Narayan Centre of Excellence for Advanced Materials, B.M.S. Institute of Technology, Yelahanka, Bangalore 560 064 (India); Department of Mechanical Engineering, B.M.S. Institute of Technology, Yelahanka, Bangalore 560 064 (India); Sudheer kumar, K.H. [Department of Environmental Science, Kuvempu University, Shankarghatta, Shimoga 577 451 (India); Department of Chemistry, B.M.S. Institute of Technology, Yelahanka, Bangalore 560 064 (India); B.S. Narayan Centre of Excellence for Advanced Materials, B.M.S. Institute of Technology, Yelahanka, Bangalore 560 064 (India); Dhananjaya, N. [Department of Physics, B.M.S. Institute of Technology, Yelahanka, Bangalore 560 064 (India); B.S. Narayan Centre of Excellence for Advanced Materials, B.M.S. Institute of Technology, Yelahanka, Bangalore 560 064 (India); Sunitha, D.V. [Prof. C.N.R. Rao Centre for Advanced Materials, Tumkur University, Tumkur 572 103 (India); Shivakumara, C. [Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012 (India); Nagabhushana, B.M. [Department of Chemistry, M.S. Ramaiah Institute of Technology, Bangalore 560 054 (India)

    2014-01-25

    Highlights: • ZnO:Eu{sup 3+} phosphors were prepared by green synthesis route. • Morphology and particle size was tuned by varying the concentration of plant latex. • The phosphor show excellent chromaticity coordinates in the white region. -- Abstract: Efficient ZnO:Eu{sup 3+} (1–11 mol%) nanophosphors were prepared for the first time by green synthesis route using Euphorbia tirucalli plant latex. The final products were well characterized by powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), UV–visible spectroscopy (UV–Vis), Fourier transform infrared spectroscopy (FTIR), etc. The average particle size of ZnO:Eu{sup 3+} (7 mol%) was found to be in the range 27–47 nm. With increase of plant latex, the particle size was reduced and porous structure was converted to spherical shaped particles. Photoluminescence (PL) spectra indicated that the peaks situated at ∼590, 615, 648 and 702 nm were attributed to the {sup 5}D{sub 0} → {sup 7}F{sub j(j=1,2,3,4)} transitions of Eu{sup 3+} ions. The highest PL intensity was recorded for 7 mol% with Eu{sup 3+} ions and 26 ml plant latex concentration. The PL intensity increases with increase of plant latex concentration up to 30 ml and there after it decreases. The phosphor prepared by this method show spherical shaped particles, excellent chromaticity co-ordinates in the white light region which was highly useful for WLED’s. Further, present method was reliable, environmentally friendly and alternative to economical routes.

  19. Energy Transfer Efficiency from ZnO-Nanocrystals to Eu3+ Ions Embedded in SiO₂ Film for Emission at 614 nm.

    Science.gov (United States)

    Mangalam, Vivek; Pita, Kantisara

    2017-08-10

    In this work, we study the energy transfer mechanism from ZnO nanocrystals (ZnO-nc) to Eu 3+ ions by fabricating thin-film samples of ZnO-nc and Eu 3+ ions embedded in a SiO₂ matrix using the low-cost sol-gel technique. The time-resolved photoluminescence (TRPL) measurements from the samples were analyzed to understand the contribution of energy transfer from the various ZnO-nc emission centers to Eu 3+ ions. The decay time obtained from the TRPL measurements was used to calculate the energy transfer efficiencies from the ZnO-nc emission centers, and these results were compared with the energy transfer efficiencies calculated from steady-state photoluminescence emission results. The results in this work show that high transfer efficiencies from the excitonic and Zn defect emission centers is mostly due to the energy transfer from ZnO-nc to Eu 3+ ions which results in the radiative emission from the Eu 3+ ions at 614 nm, while the energy transfer from the oxygen defect emissions is most probably due to the energy transfer from ZnO-nc to the new defects created due to the incorporation of the Eu 3+ ions.

  20. Giant magnetoresistance associated with a first-order transition between two ferrimagnetic states in Mn2-xZnxSb (x < 0.3) compounds

    International Nuclear Information System (INIS)

    Zhang, Q; Zhang, Y Q; Li, Y B; Du, J; Feng, W J; Li, D; Zhang, Z D

    2008-01-01

    A giant magnetoresistance (GMR) is observed in the Mn 2-x Zn x Sb (x 1.9 Zn 0.1 Sb compound. Different from other Mn 2 Sb-based compounds, the GMR in Mn 2-x Zn x Sb is closely correlated with a field-induced transition from a weak ferrimagnetic (WFI) state to a ferrimagnetic (FI) state. It is understood that the influences of both super-zone gap and spin-dependent scattering are responsible for GMR in the present system. Magnetic hysteresis and phase coexistence of the WFI and the FI phases suggest that this WFI-FI transition is of first order. The different mechanisms responsible for butterfly loops of magnetization/resistivity curves in different magnetic states are discussed

  1. The in vitro biocompatibility and macrophage phagocytosis of Mg17Al12 phase in Mg-Al-Zn alloys.

    Science.gov (United States)

    Liu, Chen; He, Peng; Wan, Peng; Li, Mei; Wang, Kehong; Tan, Lili; Zhang, Yu; Yang, Ke

    2015-07-01

    Mg alloys are gaining interest for applications as biodegradable medical implant, including Mg-Al-Zn series alloys with good combination of mechanical properties and reasonable corrosion resistance. However, whether the existence of second phase particles in the alloys exerts influence on the biocompatibility is still not clear. A deeper understanding of how the particles regulate specific biological responses is becoming a crucial requirement for their subsequent biomedical application. In this work, the in vitro biocompatibility of Mg17Al12 as a common second phase in biodegradable Mg-Al-Zn alloys was investigated via hemolysis, cytotoxicity, cell proliferation, and cell adhesion tests. Moreover, osteogenic differentiation was evaluated by the extracellular matrix mineralization assay. The Mg17Al12 particles were also prepared to simulate the real situation of second phase in the in vivo environment in order to estimate the cellular response in macrophages to the Mg17Al12 particles. The experimental results indicated that no hemolysis was found and an excellent cytocompatibility was also proved for the Mg17Al12 second phase when co-cultured with L929 cells, MC3T3-E1 cells and BMSCs. Macrophage phagocytosis co-culture test revealed that Mg17Al12 particles exerted no harmful effect on RAW264.7 macrophages and could be phagocytized by the RAW264.7 cells. Furthermore, the possible inflammatory reaction and metabolic way for Mg17Al12 phase were also discussed in detail. © 2014 Wiley Periodicals, Inc.

  2. A Novel Orange-Red Emitting ZnB4O7:Eu3+ Phosphor with Urchin-Like Nanostructure

    Directory of Open Access Journals (Sweden)

    Hom Nath Luitel

    2015-01-01

    Full Text Available A novel phosphor, ZnB4O7:Eu3+, with urchin-like structure consisting of radially arranged high density nanorods was successfully synthesized by hydrothermal process at 150°C for 24 h. The nanorods were measured from 200 to 400 nm in diameter and several µm in length. The urchins were few µm to 40 µm in diameter. The ZnB4O7:Eu3+ phosphors were efficiently excited by ultraviolet (UV ~ 254 nm to visible light of ~ 220 to 450 nm and exhibited intense orange-red emission consisting of main peaks at 590, 615, and 695 nm due to the charge transfer in the host and f→f transitions (5D0 to 7F1,2,4 of the Eu3+ ions. Effect of the Eu3+ ions concentration on the photoluminescence (PL emission intensity was investigated and it was found that 5 at% Eu3+ is the optimum concentration. Meanwhile, the concentration quenching mechanism was discussed. The key parameters, such as temperature dependent PL and CIE values of ZnB4O7:Eu3+ phosphors, were studied. The ZnB4O7:Eu3+ phosphor exhibited good thermal stability and better absorption cross section compared to the commercial Y2O2S:Eu3+ phosphor. All these characteristics indicate that the phosphor will be a potential candidate for the UV based white LEDs.

  3. Phase transitions in thin films of Sn-Sb-Se system

    International Nuclear Information System (INIS)

    Samsudi Sakrani; Abdalla Belal Adam; Yussof Wahab

    1998-01-01

    The preparation and formation of covalent ternary Sn-Sb-Se system were investigated. A solid state reaction technique was employed whereby the evaporated multilayers of Sn/Se/Sb/Sn reacted chemically at a fixed temperature of 240 o C and were allowed to a room temperature slow-cooling. X-ray diffraction analysis showed that phase changes occurred in the system, with indication of amorphization for the predicted Sn 9 .3Sb 8 .1Se 4 4.9 and Sn 1 3.2Sb 4 3.4Se 4 3.4 compositions. These enabled the preliminary topological phase transitions of Sn-Sb-Se system according to the Gibb's triangle in which the areas of crystalline-amorphous were located. (Author)

  4. Adsorption behaviour and kinetics of exchange of Zn2+ and Eu3+ ions on a composite ion exchanger

    International Nuclear Information System (INIS)

    Morcos, T.N.

    2007-01-01

    Equilibria and kinetics of exchange of both Zn2+ and Eu3+ ions on a composite ion-exchanger, cobalt hexacyanocobaltate (III) (CoHCC) incorporated in polyacrylonitrile (PAN), has been studied. The apparent capacity of CoHCC-PAN for Zn2+ and Eu3+ was determined and found to be 0.353 and 0.69 meq/g, respectively. The higher capacity for Eu3+ ions than that for Zn2+ ions is due to the higher electrostatic interaction strength of the higher charge ion with the surface. Freundlich and Langmiur adsorption isotherms were used to investigate solute (Zn2+ or Eu3+) exchange phenomenon at the liquid/solid interface. The results indicated that both Langmuir and Freundlich isotherms fit well for both Zn2+ and Eu3+. Sorption data have been also treated with the Dubinin-Radushkevich equation. The kinetics of Zn2+ or Eu3+ sorption on the composite seems to show that the reaction was proceed via two steps. The first one was fast and probably due to adsorption followed by a slow exchange reaction. In view of the data obtained on the effect of particle size and metal ion concentrations on the rate of exchange reaction, it is concluded that the mechanism for both ions was chemical control. Generally, it seems that there are two exchange sites chemically equivalent but present in pores of different sizes which lead to different degrees of dehydration of the ions sorbed on the two sites

  5. Counter-current acid leaching process for the removal of Cu, Pb, Sb and Zn from shooting range soil.

    Science.gov (United States)

    Lafond, Stéphanie; Blais, Jean-François; Mercier, Guy; Martel, Richard

    2013-01-01

    This research explores the performance of a counter-current leaching process (CCLP) for Cu, Pb, Sb and Zn extraction in a polluted shooting range soil. The initial metal concentrations in the soil were 1790 mg Cu/kg, 48,300 mg Pb/kg, 840 mg Sb/kg and 368 mg Zn/kg. The leaching process consisted of five one-hour acid leaching steps, which used 1 M H2SO4 + 4 M NaCl (20 degrees C, soil suspension = 100 g/L) followed by two water rinsing steps. Ten counter-current remediation cycles were completed and the average metal removal yields were 98.3 +/- 0.3% of Cu, 99.5 +/- 0.1% of Pb, 75.5 +/- 5.1% of Sb and 29.1 +/- 27.2% of Zn. The quality of metal leaching did not deteriorate throughout the 10 remediation cycles completed for this study. The CCLP reduced acid and salt use by approximately 68% and reduced water consumption by approximately 60%, exceeding reductions achieved by a standard acid leaching process.

  6. Examination of the Mg-Zn phase formation in hot-dip galvanized steel sheet; Untersuchung der Mg-Zn-Phasenbildung in feuerverzinktem Stahlblech

    Energy Technology Data Exchange (ETDEWEB)

    Zywitzki, Olaf; Modes, Thomas; Scheffel, Bert; Metzner, Christoph [Fraunhofer-Institut fuer Elektronenstrahl- und Plasmatechnik, Dresden (Germany)

    2012-07-01

    Zinc-magnesium layers have been produced by a combination of conventional hot-dip galvanizing and PVD magnesium coating. A subsequent short heat treatment causes the diffusion of magnesium into the zinc layer. The influence of the maximum temperature of the heat treatment on the diffusion of magnesium and on the type and distribution of the formed intermetallic Mg-Zn phases has been examined in detail in a temperature range from 300 to 400 C by means of X-ray phase analyses and metallographic cross sections. With increasing temperature a sequential intermetallic Mg-Zn phase formation has been detected. At 300 C, an initial magnesium rich, intermetallic MgZn{sub 2} surface layer is formed, which, at higher temperatures from 335 to 379 C, is progressively transformed into a zinc rich Mg{sub 2}Zn{sub 11} layer by interdiffusion. In this context, the nucleation of the Mg{sub 2}Zn{sub 11} phase takes place on the interface between the MgZn{sub 2} and the Zn phase. Above the peritectic temperature of 381 C, the microstructure is composed of a zinc matrix in which precipitated MgZn{sub 2} is dispersed. (orig.)

  7. Column Chromatography Of Co(II), Zn(II) And Eu(III) Using Pistachio Shell And Different Mobile Phases

    Energy Technology Data Exchange (ETDEWEB)

    Abdel-Fattah, A A [Nuclear Chemistry Department, Radioisotopes Production Division, Hot Laboratories Centre, Atomic Energy Authority, Cairo (Egypt)

    2009-07-01

    Pistachio shell particles (0.5-1 mm) have been applied as the stationary phase for studying the column chromatography of Co(II), Zn(II) and Eu(III) at room temperature; 26{sup +}-{sup 1}oC. This solid sorbent has been characterized by thermogravimetric analysis, infra-red spectroscopy and X-ray diffraction. Its surface area and percent of swelling have been also determined. Different eluting agents have been used for eluting the sorbed elements. The elution curves have been done from which the distribution coefficients (K{sub d}), number of theoretical plates (N) and heights equivalent to theoretical plates (H) have been determined. Column performance studies have been conducted for a representative system under certain experimented conditions and Van Deemter equation has been applied. Thermodynamic studies have been applied and thermodynamic functions ( {delta}G{sup 0} ,{delta}H{sup 0} and{delta} S{sup 0}) have been calculated for this representative system by determining K{sub d} at three different room temperatures (18, 26 and 37{sup +}-{sup 1o}C)

  8. 121Sb-NMR study of filled skutterudite CeOs4Sb12

    International Nuclear Information System (INIS)

    Yogi, M.; Niki, H.; Mukuda, H.; Kitaoka, Y.; Sugawara, H.; Sato, H.

    2007-01-01

    121 Sb nuclear magnetic resonance (NMR) of filled skutterudite compound CeOs 4 Sb 12 has been carried out to investigate a spin fluctuation below T∼25K. In spite of a powdered sample, many sharp peaks, similar to a data for single crystal, were observed because of an orientation of the sample from the anisotropy of the magnetization. A numerical calculation well reproduces resonance fields for Sb(1) sites with H parallel V zz . The nuclear spin-lattice relaxation rate divided by temperature 1/T 1 T shows continuous decrease with increasing magnetic field, indicating a suppression of the spin fluctuation by the field

  9. Synthesis and properties of ZnTe and Eu3+ ion co-doped glass nanocomposites

    International Nuclear Information System (INIS)

    Rahaman Molla, Atiar; Tarafder, Anal; Dey, Chirantan; Karmakar, Basudeb

    2014-01-01

    In this study, ZnTe (II-VI) semiconductor and Eu +3 -ion co-doped borosilicate glass has been prepared in the SiO 2 -K 2 O-CaO-BaO-B 2 O 3 glass system followed by controlled heat-treatment to produce glass nanocomposites. Glass transition temperature and crystallization peak temperature have been evaluated using DSC analysis. Dilatometric studies were carried out to evaluate thermal expansion co-efficient, glass transition temperature, and dilatometric softening temperature and found to be 10.7 × 10 −6 /K, 580° C and 628° C, respectively. TEM micrographs demonstrate formation of nano sized crystallites of less than 50 nm. The ZnTe crystal formation also established through selected area electron diffraction (SAED) analysis and high resolution images obtained through TEM studies. With increasing heat treatment time, optical transmission cut-off wavelength (λ cut-off ) shifted towards higher wavelength. Excitation spectra were recorded by monitoring emission at 613 nm corresponding to the 5 D 0 → 7 F 2 transition. An intense 394 nm excitation band corresponding to the 7 F 0 → 5 L 6 transition was observed. Emission spectra were then recorded by exciting the glass samples at 394 nm. When the glass is heat-treated for 30 min at 610° C, a 6-fold increase in the intensity of the red emission at 612 nm has been observed, which is attributed to the segregation of Eu 3+ ions into the low phonon energy ZnTe crystallites and as the size of the nanocrystals is smaller than the size of the exciton, quantum confinement effect is visible. Further increase in heat-treatment duration led to decrease in luminescence intensity due to the growth of larger size crystals. 5 D 1 → 7 F 0 transition is visible only in the samples heat-treated for 30 min and 1 h, which is a characteristic of presence of Eu 3+ ions in the low phonon energy ZnTe crystal sites. The micro hardness of the precursor glass and glass nanocomposites was evaluated; base glass shows

  10. Nanostructured ZnO/Y2O3:Eu for use as fillers in luminescent polymer electrolyte composites

    International Nuclear Information System (INIS)

    Abdullah, Mikrajuddin; Panatarani, Camellia; Kim, Tae-Oh; Okuyama, Kikuo

    2004-01-01

    Nanostructured ZnO/Eu and ZnO/Y 2 O 3 :Eu composites have been produced by hydrolizing a mixture of zinc acetate, yttrium acetate and europium acetate in ethanol solution, followed by mixing with lithium hydroxide. By analyzing the ICP data, XRD patterns and luminescence emission spectra we concluded that the europium and yttrium compounds appeared as coating layer on the surface of ZnO nanoparticles. Without heating, these layers were in amorphous state and transformed into crystalline state after annealing at temperatures of above 600 deg. C around 30 min. We observed the presence of lithium hydroxide concentration threshold below which no coating layer was formed on the surface of ZnO nanoparticles. The emission intensity of ZnO/Y 2 O 3 :Eu was found to increase with increasing annealing temperature, while the crystalline size of Y 2 O 3 (close to 20 nm) decreased with increasing the annealing temperature. The powder produced might be used as fillers in luminescent polymer electrolyte composites, which can produce two colors, i.e., red (Eu emission) when excited using a wavelength of around 254 nm and green (emitted by ZnO nanoparticles) when excited using a wavelength of around 365 nm

  11. Alternative synthetic route for the heterometallic CO-releasing [Sb@Rh12(CO27]3− icosahedral carbonyl cluster and synthesis of its new unsaturated [Sb@Rh12(CO24]4− and dimeric [{Sb@Rh12Sb(CO25}2Rh(CO2PPh3]7− derivatives

    Directory of Open Access Journals (Sweden)

    Cristina Femoni

    2016-10-01

    Full Text Available The hetero-metallic [Sb@Rh12(CO27]3− cluster has been known as for over three decades thanks to Vidal and co-workers, and represents the first example of an E-centered (E=heteroatom icosahedral rhodium carbonyl cluster. However, its synthesis required high temperature (140–160 °C and elevated CO pressure (400 atm. Applying the redox condensation method for cluster preparation, we herein report a new synthetic, high-yield route for preparing [Sb@Rh12(CO27]3− under much milder conditions of temperature and pressure. Notably, when the same synthesis was carried out under N2 instead of CO atmosphere, the new isostructural but unsaturated derivative [Sb@Rh12(CO24]4− was obtained, for which we report the full X-ray structural characterization. This species represents one of the few examples of an icosahedral cluster disobeying the electron-counting Wade-Mingos rules, possessing less than the expected 170 cluster valence electrons (CVEs. Judging from IR monitoring, the two species can be obtained one from the other by switching between N2 and CO atmosphere, making [Sb@Rh12(CO27]3− a spontaneous CO-releasing molecule. Finally, the study of the chemical reactivity of [Sb@Rh12(CO27]3− with PPh3 allowed us to obtain the new [{Sb@Rh12Sb(CO25}2Rh(CO2PPh3]7− dimeric compound, for which we herein report the full X-ray structural and 31P NMR analyses.

  12. Dewetting and Segregation of Zn-Doped InSb in Microgravity Experiments

    Science.gov (United States)

    Ostrogorsky, A. G.; Marin, C.; Duffar, T.; Volz, M.

    2009-01-01

    In directional solidification, dewetting is characterized by the lack of contact between the crystal and the crucible walls, due to the existence of a liquid meniscus at the level of the solid-liquid interface. This creates a gap of a few tens of micrometers between the crystal and the crucible. One of the immediate consequences of this phenomenon is the dramatic improvement of the quality of the crystal. This improvement is partly due to the modification of the solid-liquid interface curvature and partly to the absence of sticking and spurious nucleation at the crystal-crucible interface. Dewetting has been, commonly observed during the growth of semiconductors in crucibles under microgravity conditions where it appears to be very stable: the gap between the crystal and the crucible remains constant along several centimetres of growth. The physical models of the phenomenon are well established and they predict that dewetting should not occur in microgravity, if sufficient static pressure is imposed on the melt, pushing it towards the crucible. We present the results of InSb(Zn) solidification experiments conducted at the International Space Station (ISS) where, in spite of a spring exerting a pressure on the liquid, partial dewetting did occur. This surprising result is discussed in terms of force exerted .by the spring on the liquid and of possibility that the spring did not work properly. Furthermore, it appears that the segregation of the Zn was not affected by the occurrence of the dewetting. The data suggest that there was no significant interference of convection with segregation of Zn in InSb.

  13. Red luminescence from hydrothermally synthesized Eu-doped ZnO ...

    Indian Academy of Sciences (India)

    Administrator

    turally characterized by X-ray diffraction, transmission electron microscopy ... II–VI compound semiconductor with large exciton binding .... ions occupy a site with inversion symmetry and 617 nm ... TEM image of Eu-doped ZnO nanoparticles with (a) 1⋅2 at. .... Jacquier B, Lebrasseur E, Guy S, Belarouci A and Menchini F.

  14. Preparation and thermoelectric properties of p-Type PrzFe4-xCoxSb12 skutterudites

    International Nuclear Information System (INIS)

    Shin, Dong-Kil; Kim, Il-Ho

    2014-01-01

    p-Type Pr z Fe 4-x Co x Sb 12 (z = 0.8, 1.0 and x = 0, 0.5, 1.0) skutterudites were synthesized by encapsulated melting and annealing and were consolidated with hot pressing. The effects of Pr filling and Co substitution for Fe (charge compensation) on the transport and the thermoelectric properties were examined. A few secondary phases, such as Sb and FeSb 2 , were formed together with the skutterudite phase, but the formation was suppressed with increasing Pr and Co contents. We confirmed that Pr filled in the voids and that Co was substituted for Fe in all specimens because the lattice constant increased with increasing Pr content and decreased with increasing Co content. The electrical conductivity decreased slightly with increasing temperature, showing degenerate semiconductor characteristics. The Hall and the Seebeck coefficients showed positive signs, indicating that the major carriers were holes (p-type conduction). The electrical conductivity and the thermal conductivity were decreased due to a decrease in the carrier concentration with increasing Pr and Co contents. As a result, the dimensionless figure of merit, ZT, was improved by Pr filling and Co substitution, and a maximum ZT = 0.89 was obtained at 723 K for Pr 0.8 Fe 3 CoSb 12 .

  15. Magnetic Phase Transitions of CeSb. I

    DEFF Research Database (Denmark)

    Fischer, Pernille Hertz; Lebech, Bente; Meier, G.

    1978-01-01

    The magnetic ordering of the anomalous antiferromagnet CeSb, which has a NaCl crystal structure, was determined in zero applied magnetic field by means of neutron diffraction investigations of single crystals and powder. Below the Neel temperature TN of (16.1+or-0.1)K, there exist six partially...... a first-order phase transition at TN. At approximately TN/2 there is a first-order phase transition to a FCC type IA low-temperature configuration. The unusual magnetic properties of CeSb, which result from anisotropic exchange and crystalline electric field effects, resemble those of certain actinide Na...

  16. Characterization of Cr-doped Sb{sub 2}Te{sub 3} films and their application to phase-change memory

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qing; Xia, Yangyang; Zheng, Yonghui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); University of the Chinese Academy of Sciences, Beijing, 100049 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Liu, Bo; Zhu, Min; Song, Sannian; Lv, Shilong; Cheng, Yan; Song, Zhitang; Feng, Songlin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Huo, Ruru [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghaitech University, Shanghai, 200031 (China)

    2015-08-15

    Phase-change memory (PCM) is regarded as one of the most promising candidates for the next-generation nonvolatile memory. Its storage medium, phase-change material, has attracted continuous exploration. Along the traditional GeTe-Sb{sub 2}Te{sub 3} tie line, the binary compound Sb{sub 2}Te{sub 3} is a high-speed phase-change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb{sub 2}Te{sub 3}, called Cr-Sb{sub 2}Te{sub 3} (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb{sub 2}Te{sub 3} without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST{sub 1}0.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10-year data retention is 120.8 C, which indicates better thermal stability than GST and pure Sb{sub 2}Te{sub 3}. PCM cells based on CST{sub 1}0.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr-Sb{sub 2}Te{sub 3} with suitable composition is a promising novel phase-change material used for PCM with high speed and good thermal stability performances. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Aluminum-centered tetrahedron-octahedron transition in advancing Al-Sb-Te phase change properties.

    Science.gov (United States)

    Xia, Mengjiao; Ding, Keyuan; Rao, Feng; Li, Xianbin; Wu, Liangcai; Song, Zhitang

    2015-02-24

    Group IIIA elements, Al, Ga, or In, etc., doped Sb-Te materials have proven good phase change properties, especially the superior data retention ability over popular Ge2Sb2Te5, while their phase transition mechanisms are rarely investigated. In this paper, aiming at the phase transition of Al-Sb-Te materials, we reveal a dominant rule of local structure changes around the Al atoms based on ab initio simulations and nuclear magnetic resonance evidences. By comparing the local chemical environments around Al atoms in respective amorphous and crystalline Al-Sb-Te phases, we believe that Al-centered motifs undergo reversible tetrahedron-octahedron reconfigurations in phase transition process. Such Al-centered local structure rearrangements significantly enhance thermal stability of amorphous phase compared to that of undoped Sb-Te materials, and facilitate a low-energy amorphization due to the weak links among Al-centered and Sb-centered octahedrons. Our studies may provide a useful reference to further understand the underlying physics and optimize performances of all IIIA metal doped Sb-Te phase change materials, prompting the development of NOR/NAND Flash-like phase change memory technology.

  18. Work hardening characteristics in Al base alloys with 12.6 and 45 wt.% Zn

    International Nuclear Information System (INIS)

    Abd El-Salam, F.; Mostafa, M.M.; Wahab, L.A.; Mostafa, M.T.; Abd El-Aziz, Sh.M.

    2008-01-01

    The stress-strain curves were obtained for Al-Zn alloys of 12.6 wt.% Zn (alloy I) and 45 wt.% Zn (alloy II) with elements of purity (99.99). The monotonic shift of these curves towards lower flow stress and higher ductility was interrupted at the transformation temperatures 483 K (alloy I) and both 543, 603 K (alloy II). By increasing deformation temperature, Young's modulus, Y, yield and fracture stresses, σ y and σ f , respectively, fracture time, t f , the coefficient of parabolic work hardening, χ, decreased while fracture strain, ε f , and dislocation slip distance, L, increased. From the obtained X-rays diffraction patterns the lattice strain, ε, crystallite size, η, and dislocation density, ρ, were obtained at different deformation temperatures around transformation

  19. Molecular beam epitaxial growth of oriented and uniform Ge{sub 2}Sb{sub 2}Te{sub 5} nanoparticles with compact dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Beining; Sun, Yu; Wu, Jie; Yuan, Long; Wu, Xiaofeng; Huang, Keke; Feng, Shouhua, E-mail: shfeng@jlu.edu.cn [Jilin University, State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry (China)

    2017-02-15

    The scaling-down of phase change memory cell is critical to achieve high-performance and high-density memory devices. Herein, we report that Ge{sub 2}Sb{sub 2}Te{sub 5} nanoparticles along the [1 1 1] direction were synthesized without templates or etching in a molecular beam epitaxy system. Under non-stoichiometric Ge:Sb:Te beam ratio condition, the growth of high-density Ge{sub 2}Sb{sub 2}Te{sub 5} nanoparticles was achieved by Zn-doping. The average diameter of the nanoparticles is 8 nm, and the full width at half maximum of the size distribution is 2.7 nm. Our results suggest that the size and shape modifications of Ge{sub 2}Sb{sub 2}Te{sub 5} nanoparticles could be induced by Zn-doping which influences the nucleation in the growth process. In addition, the bonding states of Zn and Te verified by X-ray photoelectron spectroscopy proved that Zn atoms located in the Ge{sub 2}Sb{sub 2}Te{sub 5} matrix. This approach exemplified here can be applied to the sub-20 nm phase change memory devices and may also be extendable to be served in the design and development of more materials with phase transitions.

  20. Crystalline-electric field of Pr(Os1-xRux)4Sb12

    International Nuclear Information System (INIS)

    Akita, H.; Yoshino, G.; Ochiai, A.

    2006-01-01

    High-quality single crystals of Pr(Os 1-x Ru x ) 4 Sb 12 were grown by the Sb self-flux method. Magnetic susceptibility χ(T) was measured precisely. The characteristic temperature T max , where χ(T) exhibits a maximum, varies as a function of Ru-content x but its functional form changes at around x=0.6 where competition of two types of superconductivity is suggested. Since T max is thought to be relevant to the splitting energy between a ground state and a first excited state, we analyzed χ(T) considering the crystalline electric field (CEF) of the T h symmetry. χ(T) is well fitted assuming a Γ 1 singlet ground state for all x values. As expected from T max , the energy of the first excited state (Γ 4 (2) ) changes its functional form at around x=0.6. Furthermore, the energies of the second and third excited states (Γ 4 (1) and Γ 23 ) exhibit a minimum at almost the same value of x=0.6. These results suggest that the CEF is related to the superconductivity in Pr(Os 1-x Ru x ) 4 Sb 12

  1. Induced assembly and photoluminescence of lanthanum (Tb, Eu, Dy) complexes/ZnO/polyethylene glycol hybrid phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Yan Bing [Department of Chemistry, Tongji University, Siping Road 1239, Shanghai 200092 (China)]. E-mail: byan@tongji.edu.cn; Chen Xi [Department of Chemistry, Tongji University, Siping Road 1239, Shanghai 200092 (China); Wu Jianhua [Department of Chemistry, Tongji University, Siping Road 1239, Shanghai 200092 (China)

    2007-08-31

    Some novel kinds of hybrid phosphors were assembled with lanthanum (Tb, Eu, Dy) complexes (with four kinds of terbium complexes is 2,4-dihydroxybenzonic acid (DHBA), 1,10-phenanthroline (phen), acetylacetone (AA) and nicotinic acid (Nic), respectively) doped ZnO/PEG particles by co-precipitation approach derived from Zn(CH{sub 3}COO){sub 2} (Zn(AC){sub 2}), NaOH, PEG as precursors at room temperature. The characteristic luminescence spectra for f-f transitions of Tb{sup 3+}, Eu{sup 3+}, Dy{sup 3+} were observed. It is worthy to point out that ZnO is the excellent host for lanthanum ions by the assembly of PEG matrices.

  2. In-Ga-Zn-oxide thin-film transistors with Sb2TeOx gate insulators fabricated by reactive sputtering using a metallic Sb2Te target

    International Nuclear Information System (INIS)

    Cheong, Woo-Seok

    2011-01-01

    Using reactive sputtering, we made transparent amorphous Sb 2 TeO x thin films from a metallic Sb 2 Te target in an oxidizing atmosphere. In-Ga-Zn-oxide thin-film transistors (IGZO TFTs) with Sb 2 TeO x gate insulators deposited at room temperature showed a large hysteresis with a counter clockwise direction, which was caused by mobile charges in the gate insulators. The problems of the mobile charges was solved by using Sb 2 TeO x films formed at 250 .deg. C. After the IGZO TFT had been annealed at 200 .deg. C for 1 hour in an O 2 ambient, the mobility of the IGZO TFT was 22.41 cm 2 /Vs, and the drain current on-off ratio was ∼10 8 .

  3. Synthesis, characterization and study of the magnetic properties of Zn_9_1_-_x_)Eu_xO (0,0 ≤ x ≤ 0,035) by combustion reaction

    International Nuclear Information System (INIS)

    Soares, Monica Pereira

    2013-01-01

    Nanocrystallitics of Zinc Oxide containing different amounts of Europium (Zn_(_1_-_x_)Eu_xO - it being 0,0 ≤ x ≤ 0,035) were synthesized by a combustion reaction, with the aim of evaluating the effect of the concentration of Eu"3"+ in magnetic properties, after obtained. The chemical composition was determined by energy dispersive spectroscopy, X-ray (EDS). The structural characterization was performed by X-Ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR), Thermogravimetric Analysis (TGA), Spectroscopy Photoelectrons Excited by X-Rays (XPS) and Transmission Electron Microscopy (TEM). Crystalline structure powders of ZnO in wurtzite were formed after the thermal treatment at 550°C about one hour, with average size crystallites of 20 nm. The X-Ray Diffraction results showed presence of diffraction peaks of well-defined of ZnO primary characteristic phase and traces of oxide Europium (Eu_2O_3) as secondary stage for samples doped with 3.5% of Eu"3"+. The analyzes showed the magnetic samples exhibit ferromagnetism at room temperature dependent content of ions Eu"3"+, but for the sample doped with 3.5% Europium the magnetization drops considerably, due to the formation of Oxide Europium (Eu_2O_3) non-magnetic. This fact suggests that the ferromagnetism of samples is associated with the Eu"3"+ ions, it is occupying the interstices of matrix semiconductor wafer. (author)

  4. Sb{sup III} - Sb{sup V} Exchange Reaction in Hydrochloric: Acid Solutions; Echange Sb{sup III}-Sb{sup V} dans des Solutions d'Acide Chlorhydrique; Reaktsiya obmena Sb(III) - Sb(V) v rastvorakh khloristovodorodnoj kisloty; Intercambio Sb{sup III}-Sb{sup V} en Soluciones de HCl

    Energy Technology Data Exchange (ETDEWEB)

    Kambara, T.; Yamaguchi, K.; Yasuba, S. [Shizuoka University, Shizuoka City (Japan)

    1965-10-15

    The exchange reaction of Sb{sup III} - Sb{sup V} in solutions of low HCl concentrations was studied using {sup 124}Sb as a tracer. The effects of HCl concentrations and chemical forms of antimony on the exchange rate were investigated. The HCl concentrations of the antimony solutions ((Sb{sup III}) =(Sb{sup V}) = 6.8 x 10{sup -4}M) were changed from 0.8 to 4.0M and the half-time for the exchange was measured by plotting log (1 - F) versus time t to calculate the exchange rate assuming the second-ordet reaction. It was found that the exchange rate was sharply increased with the increase of HCl concentrations (at 25 Degree-Sign C, from 0.8 to 2.0M) and at 2.0M HCl concentration the rate reached the maximum, from which the rate was decreased with the increase of HCl concentrations (at 25 Degree-Sign C, from 2.0 to 4.0M). Two sorts of Sb{sup V} species were used for our investigations, i.e. one was used directly after the dilution of 10M HCl Sb{sup V} solution with water and the other was used after 24 hours standing at room temperature from the dilution. (The Sb{sup III} species were also kept standing after preparation from 10M HCl Sb{sup III} solution.) In both cases the maximum rates were found to exist at 2.0M HCl concentration. The rate R{sub 1} for the former (directly after dilution) was 4.5 x 10{sup -6} mole litre{sup -1} min{sup -1} and the rate R{sub 2} for the latter (24 hours standing) was 1.2 x 10{sup -}{sub 6} mole litre. Also the activation energy for these cases was found to be 12.2 kcal/mole and 19.1 kcal/mole. By spectrophotometric studies, the Sb{sup V} species of the former type were found to be mainly consisting of SbCl{sup -}{sub 6} and the species of the latter type to be of SbCl{sub 4}(OH){sup -}{sub 2}, etc. Besides these facts the form of Sb{sup III} species was found to have no influence on the exchange rate. A much sharper increase of the exchange rate was observed when the HCl concentration of the antimony solution was fixed at 0.8M and

  5. Design, synthesis and photoelectrochemical properties of hexagonal metallomacrocycles based on triphenylamine: [M6(4,4'-bis(2,2':6',2''-terpyridinyl)triphenylamine)6(X)12]; [M = Fe(II), PF6- and Zn(II), BF4-].

    Science.gov (United States)

    Hwang, Seok-Ho; Moorefield, Charles N; Wang, Pingshan; Fronczek, Frank R; Courtney, Brandy H; Newkome, George R

    2006-08-07

    Synthesis of a novel bis(terpyridine) ligand, 4,4'-bis(2,2':6',2''-terpyridinyl)triphenylamine, utilizing triphenylamine, as a specific angle controller, has led to the self-assembly of a unique hexagonal metallomacrocycle family, [Fe6(2)6(PF6)12] and [Zn6(2)6(BF4)12], utilizing terpyridine-metal(II)-terpyridine connectivity. The crystal structure of the novel ligand shows that the angle between the two terpyridinyl moieties is 119.69 degrees , which enabled the formation of the hexagonal-shaped macrocycles. The crystal packing architectures of this starting ligand revealed channels induced by solvent encapsulation. Following complexation of this ligand with transition metals [Fe(II) or Zn(II)] in a one-pot reaction, the resultant structures were characterized by (1)H and (13)C NMR, UV/Vis and mass spectroscopies. The expected metal-to-ligand charge transfer (MLCT; lambda(max) = 582 nm) and emission (lambda(em) = 575 nm) characteristics were exhibited by both [Fe6(2)6(PF6)12] and[Zn6(2)6(BF4)12]. The photoelectrochemical characteristics of these hexagonal metallomacrocycles demonstrate that they can be used as sensitizers in dye-sensitized solar cells.

  6. Characterization of Cr-rich Cr-Sb multilayer films: Syntheses of a new metastable phase using modulated elemental reactants

    International Nuclear Information System (INIS)

    Regus, Matthias; Mankovsky, Sergiy; Polesya, Svitlana; Kuhn, Gerhard; Ditto, Jeffrey; Schürmann, Ulrich; Jacquot, Alexandre; Bartholomé, Kilian; Näther, Christian; Winkler, Markus; König, Jan D.; Böttner, Harald; Kienle, Lorenz; Johnson, David C.; Ebert, Hubert; Bensch, Wolfgang

    2015-01-01

    The new metastable compound Cr 1+x Sb with x up to 0.6 has been prepared via a thin film approach using modulated elemental reactants and investigated by in-situ X-ray reflectivity, X-ray diffraction, differential scanning calorimetry, energy dispersive X-ray analysis as well as transmission electron microscopy and atomic force microscopy. The new Cr-rich antimonide crystallizes in a structure related to the Ni 2 In-type structure, where the crystallographic position (1/3, 2/3, 3/4) is partially occupied by excess Cr. The elemental layers of the pristine material interdiffused significantly before Cr 1+x Sb crystallized. A change in the activation energy was observed for the diffusion process when crystal growth starts. First-principles electronic structure calculations provide insight into the structural stability, magnetic properties and resistivity of Cr 1+x Sb. - Graphical abstract: 1 amorphous multilayered film 2 interdiffused amorphous film 3 metastable crystalline phase 4 thermodynamic stable phase (and by-product). - Highlights: • Interdiffusion of amorphous Cr and Sb occurs before crystallization. • Crystallization of a new metastable phase Cr 1.6 Sb in Ni 2 In-type structure. • The new Cr-rich phase shows half-metallic behavior

  7. Magnetic properties of CeyFe4-xNixSb12

    International Nuclear Information System (INIS)

    Viennois, R.; Ravot, D.; Tedenac, J.C.; Charar, S.; Mauger, Alain

    2005-01-01

    The structural and magnetic properties of the metallic skutterudite CeFe 4 Sb 12 have been investigated, with those of Ce y Fe 4-x Ni x Sb z with compositions approaching the relations y=(4-2x)/3, z=12 for which the materials are semiconductors. The large and temperature-dependent contribution of Fe to the magnetic susceptibility of CeFe 4 Sb 12 has been isolated from the Ce contribution, which makes possible a quantitative analysis of the Kondo lattice behavior. In CeFe 4 Sb 12 the Wilson-Sommerfeld ratio is modified by a factor two with respect to former analyses where the magnetic contribution of Fe had been neglected. The main effect of the reduction of the free carrier (hole) concentration in Ce y Fe 4 Sb 12 is to suppress the Kondo effect and the Fe contribution to the magnetic susceptibility. The samples with theoretical hole concentration per unit cell p*=z-8-3y-2x smaller than 0.5 behave like semiconductors in which the exchange between localized Ce 3+ spins is negligible, and are most promising for a potential use as thermoelements

  8. Structures and solid solution mechanisms of pyrochlore phases in the systems Bi2O3-ZnO-(Nb, Ta)2O5

    International Nuclear Information System (INIS)

    Tan, K.B.; Khaw, C.C.; Lee, C.K.; Zainal, Z.; Miles, G.C.

    2010-01-01

    Research highlights: → Combined XRD and ND Rietveld structural refinement of pyrochlores. → Structures and solid solution mechanisms of Bi-pyrochlores. → Bi and Zn displaced off-centre to different 96g A-site positions. → Summary of composition-structure-property of Bi-pyrochlores. - Abstract: The crystal structures of two pyrochlore phases have been determined by Rietveld refinement of combined X-ray and neutron powder diffraction data. These are stoichiometric, Bi 1.5 ZnTa 1.5 O 7 and non-stoichiometric Bi 1.56 Zn 0.92 Nb 1.44 O 6.86 . In both structures, Zn is distributed over A- and B-sites; Bi and Zn are displaced off-centre, to different 96g A-site positions; of the three sets of oxygen positions, O(1) are full, O(2) contain vacancies and O(3) contain a small number of oxygen, again in both cases. Comparisons between these structures, those of related Sb analogues and literature reports are made.

  9. Structural and Optical Properties of Eu Doped ZnO Nanorods prepared by Pulsed Laser Deposition

    KAUST Repository

    Alarawi, Abeer

    2014-06-23

    Nano structured wide band gap semiconductors have attracted attention of many researchers due to their potential electronic and optoelectronic applications. In this thesis, we report successful synthesis of well aligned Eu doped ZnO nano-rods prepared, for the first time to our knowledge, by pulsed laser deposition (PLD) without any catalyst. X-ray diffraction (XRD) patterns shows that these Eu doped ZnO nanorods are grown along the c-axis of ZnO wurtzite structure. We have studied the effect of the PLD growth conditions on forming vertically aligned Eu doped ZnO nanorods. The structural properties of the material are investigated using a -scanning electron microscope (SEM). The PLD parameters must be carefully controlled in order to obtain c-axis oriented ZnO nanorods on sapphire substrates, without the use of any catalyst. The experiments conducted in order to identify the optimal growth conditions confirmed that, by adjusting the target-substrate distance, substrate temperature, laser energy and deposition duration, the nanorod size could be successfully controlled. Most importantly, the results indicated that the photoluminescence (PL) properties reflect the quality of the ZnO nanorods. These parameters can change the material’s structure from one-dimensional to two-dimensional however the laser energy and frequency affect the size and the height of the nanorods; the xygen pressure changes the density of the nanorods.

  10. Effects of calcining temperatures of Eu{sup 2+} and Dy{sup 3+} ion-codoped calcia-alumina binary compounds on their phase transition and luminescence properties

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Chen-Jui, E-mail: cjliang@fcu.edu.tw; Siao, Hao-Yi

    2017-06-01

    In this study, phase evolution as a function of calcining temperature in calcia-alumina binary compound phosphors was examined to interpret their luminescence properties. The binary compounds were prepared through a coprecipitation method employing potassium carbonate as the precipitant to obtain precursors with a high-precision stoichiometric composition for the calcination. The results indicate that the morphology, surface properties, and infrared transmittance of the prepared phosphors were affected by the calcining temperature. X-ray diffraction analysis results enabled identification of Ca{sub 12}Al{sub 14}O{sub 33}, CaAl{sub 2}O{sub 4}, and CaAl{sub 4}O{sub 7} phase transitions at various calcining temperatures. The amount of the CaAl{sub 2}O{sub 4} phase increased with the calcining temperature within the range of 700–1060 °C. The Ca{sub 12}Al{sub 14}O{sub 33} and CaAl{sub 4}O{sub 7} phases exhibited trends opposite to that of the CaAl{sub 2}O{sub 4} phase. When the calcining temperature reached 980 °C, the CaAl{sub 2}O{sub 4} phase (60.5%) was determined to be the main phase in the structure, and excellent emission intensity at an emission band of 449 nm was observed as a result of the complete substitution of Eu{sup 2+} for Ca{sup 2+}. The emission intensity corresponding to Eu{sup 2+} 4f{sup 6}5d{sup 1} → 4f{sup 7} decreased slightly when the temperature reached 1060 °C because of more monoclinic reciprocal CaAl{sub 4}O{sub 7} phase (81.5%) formation, causing the transfer of some Eu{sup 2+} to Eu{sup 3+}, during which strong photoluminescence spectra of Eu{sup 3+5}D{sub 0} → {sup 7}F{sub j} (j = 0, 1, 2, 3, 4) within the wavelength range of 570–720 nm were observed. Because the strong photoluminescence spectra of the Eu{sup 2+} and Eu{sup 3+} emissions were together within the wavelength range of 449–720 nm in this phosphor, the photoluminescence was white light. One moderately intense emission band in the infrared region was observed and

  11. Nanocrystals of a new complex perovskite dielectric Ba{sub 2}TmSbO{sub 6}

    Energy Technology Data Exchange (ETDEWEB)

    Nair, V.M. [Department of Physics, University College, Trivandrum 695034, Kerala (India); Jose, R., E-mail: rjose@ump.edu.my [Faculty of Industrial Sciences and Technology, Universiti Malaysia Pahang, 26300 Kuantan (Malaysia); Anil Kumar, G.M. [Noritake Co Ltd, 300 Higashiyama, Miyoshi, Aichi 470-0293 (Japan); Yusoff, Mashitah M. [Faculty of Industrial Sciences and Technology, Universiti Malaysia Pahang, 26300 Kuantan (Malaysia); Wariar, P.R.S. [Department of Physics, University College, Trivandrum 695034, Kerala (India)

    2012-01-25

    Highlights: Black-Right-Pointing-Pointer A new material, Ba{sub 2}TmSbO{sub 6}, has been synthesized as nanocrystals for the first time. Black-Right-Pointing-Pointer A combustion process, characterized by a one-pot procedure, was adopted to synthesize Ba{sub 2}TmSbO{sub 6} as nanocrystals. Black-Right-Pointing-Pointer Crystal structure and dielectric properties of the Ba{sub 2}TmSbO{sub 6} have been studied and compared with similar materials. - Abstract: Nanocrystals of a new complex perovskites ceramic oxide, barium thulium antimony oxide - Ba{sub 2}TmSbO{sub 6}, were synthesized using a single step auto-ignition combustion process. The combustion product was single phase and composed of aggregates of nanocrystals of sizes in the range 20-50 nm. Ba{sub 2}TmSbO{sub 6} crystallized in cubic perovskite structure with lattice parameter, a = 8.4101 Angstrom-Sign . The polycrystalline fluffy combustion product was sintered to high density ({approx}97%) at {approx}1450 Degree-Sign C for 4 h. Resistivity of the sintered specimen was {approx}5 M{Omega}/cm. The Ba{sub 2}TmSbO{sub 6} has dielectric constant ({epsilon} Prime ) and dielectric loss (tan {delta}) of 17 and {approx}10{sup -4} at 5 MHz; the new material would probably be developed as a low-loss dielectric material.

  12. Phase transformation in Mg—Sb3Te thin films

    International Nuclear Information System (INIS)

    Li Jun-Jian; Chen Yi-Min; Nie Qiu-Hua; Lü Ye-Gang; Wang Guo-Xiang; Shen Xiang; Dai Shi-Xun; Xu Tie-Feng

    2014-01-01

    Mg-doped Sb 3 Te films are proposed to improve the performance of phase-change memory (PCM). We prepare Mg-doped Sb 3 Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb 3 Te. Especially Mg 25.19 (Sb 3 Te)74.81 shows higher T c (∼ 190 °C) and larger E a (∼ 3.49 eV), which results in a better data retention maintaining for 10 yr at ∼ 112 °C. Moreover R a /R c value is also improved. These excellent properties make Mg—Sb—Te material a promising candidate for the phase-change memory (PCM). (special topic — international conference on nanoscience and technology, china 2013)

  13. Facile fabrication of core–shell ZnO/Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} nanorods: Enhanced photoluminescence through electron charge

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Shengfei; Gao, Hongli [School of Materials Science & Engineering, Beihang University, Beijing 100191 (China); Deng, Yuan, E-mail: dengyuan@buaa.edu.cn [School of Materials Science & Engineering, Beihang University, Beijing 100191 (China); Wang, Yao [School of Materials Science & Engineering, Beihang University, Beijing 100191 (China); Qu, Shengchun, E-mail: qsc@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2016-01-15

    Graphical abstract: - Highlights: • The Bi{sub 0.5}Sb{sub 1.5}Te{sub 3}/ZnO core–shells prepared by combining a facile hydrothermal growth and magnetron sputtering approach. • The light absorption and photoluminescence emission of the ZnO and the Bi{sub 0.5}Sb{sub 1.5}Te{sub 3}/ZnO core–shells are investigated. • The core–shell structure reveals a simultaneous novelty enhancement of the photoluminescence emission in the UV and visible range. • The mechanism for the PL simultaneous enhancement is described. - Abstract: Surface decoration techniques are emerging as promising strategy to improve the optical properties of the ZnO based materials. The core–shell ZnO/Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} nanorods were grown on a FTO substrate through a facile hydrothermal and magnetron sputtering combined approach. The microstructure of the core–shell nanorod arrays were investigated by the X-ray diffraction (XRD), a field emission Scanning electron microscopy (SEM) and high resolution transmission electron microscope (HTEM). The optical properties of the core–shell nanorod arrays were investigated through the diffuse reflectance absorption spectra and photoluminescence emission. The visible light absorption and especially the photoluminescence emission of the ZnO nanorods are enhanced markedly with the Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} grains coating the ZnO nanorods through the electron charge.

  14. Ordered perovskites with cationic vacancies. 7. Structural investigations on Ba/sub 2/Zrsub(3/4)vacantsub(1/4)SbO/sub 6/

    Energy Technology Data Exchange (ETDEWEB)

    Treiber, U; Kemmler-Sack, S [Tuebingen Univ. (Germany, F.R.). Lehrstuhl fuer Anorganische Chemie 2

    1980-11-01

    The ochre coloured Ba/sub 2/Zrsub(3/4)vacantsub(1/4)SbO/sub 6/ belongs to the group of oxygen perovskites with an ordered distribution of the vacancies. It crystallizes tetragonal (a = 11.68/sub 5/ A; c = 16.60/sub 6/ A) with 16 formula units in the cell: Ba/sub 32/Zr/sub 12/vacant/sub 4/Sb/sub 16/O/sub 96/. For the space group P 4/mmm intensity calculations on powder data gave a refined, intensity related R' value of 4.8%. In the structure the Zr and Ba atoms are ordered (1:1 order); the four cationic vacancies are located in a face centered arrangement in the zirconium sublattice. The Ba atoms are displaced by approximately 0.20 A in direction of the neighbouring vacancy, while the other cations maintain their ideal positions.

  15. Perovskites Ba/sub 2/Bsub(1/2)sup(I)Bsub(1/2)sup(III)Tesup(VI)O/sub 6/

    Energy Technology Data Exchange (ETDEWEB)

    Roller, H; Kemmler-Sack, S [Tuebingen Univ. (Germany, F.R.). Lehrstuhl fuer Anorganische Chemie 2

    1980-07-01

    Compounds of composition Ba/sub 2/Bsub(1/2)sup(I)Bsub(1/2)sup(III)Tesup(VI)O/sub 6/ with Bsup(I) = Li, Na; Bsup(III) = La, Pr, Nd, Sm, Eu, Gd, Tb, Ho, Yb, Y, In, Sc crystallize in a cubic 1:1 ordered perovskite structure. The vibrational spectroscopic investigations show, that more species of TeO/sub 6/ octahedra are present in the lattice.

  16. Molten salt synthesis of ZnNb2O6 powder

    International Nuclear Information System (INIS)

    Guo Liangzhai; Dai Jinhui; Tian Jintao; Zhu Zhibin; He Tian

    2007-01-01

    Pure ZnNb 2 O 6 powder was successfully prepared by the molten salt synthesis method using Nb 2 O 5 and ZnO as raw materials and a mixture of NaCl and KCl as the solvent. The phase form and morphology of the prepared powder were characterized by X-ray diffraction and scanning electron microscopy. The effect of reacting temperature on phase formation was investigated. The results indicated that the single phase ZnNb 2 O 6 powder can be obtained by the molten salt synthesis method at 600 deg. C, and the SEM photographs show that the grains of the powder are rod-like particles

  17. Effects of the copper content on the structural and electrical properties of Cu2ZnSnSe4 bulks

    Science.gov (United States)

    Tsega, Moges; Dejene, F. B.; Koao, L. F.

    2016-01-01

    We have investigated the concept of defect in CuxZnSnSe4 (x=1.6-2.0) and Cuy(Zn0.9Sn1.1)Se4 (y= 1.6-2.0) bulks prepared by liquid-phase sintering at 600 °C for 2 h with soluble sintering aids of Sb2S3 and Te. All samples were found to exhibit p-type semiconductor for CuxZnSnSe4, while n-type of behavior obtained at y= 1.8-2.0 for Cuy(Zn0.9Sn1.1)Se4 pellets. The Cu vacancy acts as an acceptor point defect to form the p-type semiconductor, and Sn4+ acts as a donor to form the n-type behavior for the Sn-rich CZTSe. SEM images of pellets show dense surface morphology, and increase in grain size upon Cu inclusion. The largely increased Hall mobility and the slightly changed carrier concentration for Cuy(Zn0.9Sn1.1)Se4 with increasing the Cu content is related to the types of its defects. At y=2.0 with carrier concentration of 4.88×1017 cm-3 showed the highest mobility of around 58 cm2/V s. Based upon the proposed point defects, the CZTSe property can be consistently explained.

  18. AlGaAsSb Vapor Phase Epitaxy and Laser Program.

    Science.gov (United States)

    1983-06-01

    graded or step-graded ternary film structures to fulfill the role of a sub- strate. One of the objectives of the program, however, was to determine the...0.02 ur/mmn. 27 MRDC81-14083 Fig. 11 RED pattern of the ( iaSb sample of Fig. 6. 28 7- 7 crystal. No samples from this group were submitted to SEM

  19. High quality InAsSb grown on InP substrates using AlSb/AlAsSb buffer layers

    International Nuclear Information System (INIS)

    Wu, B.-R.; Liao, C.; Cheng, K. Y.

    2008-01-01

    High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy was achieved using AlSb/AlAsSb structure as the buffer layer. A 1000 A InAsSb layer grown on top of 1 μm AlSb/AlAsSb buffer layer showed a room temperature electron mobility of ∼12 000 cm 2 /V s. High structural quality and low misfit defect density were also demonstrated in the InAsSb layer. This novel AlSb/AlAsSb buffer layer structure with the AlAsSb layer lattice matched to InP substrates could enhance the performance of optoelectronic devices utilizing 6.1 A family of compound semiconductor alloys

  20. 151Eu nuclear resonant inelastic scattering of Eu3Pd20Ge6

    International Nuclear Information System (INIS)

    Tsutsui, S.; Yoda, Y.; Kobayashi, Y.; Higashitaniguchi, S.; Seto, M.; Kitagawa, J.; Takabatake, T.

    2010-01-01

    151 Eu nuclear resonant inelastic scattering of Eu 3 Pd 20 Ge 6 . The Eu partial phonon density of states (DOS) in Eu 3 Pd 20 Ge 6 are investigated using 151 Eu nuclear resonance inelastic scattering (NRIS). 151 Eu NRIS was carried out at BL09XU of SPring-8. Significant temperature dependence was found in the partial phonon DOS. Judging from the valence change at the Eu 4a site and the comparison with the ab initio calculation of Eu 3 Pd 20 Ge 6 , the change of the Eu DOS is caused by the electronic states. On the other hand, significant acoustic contribution was found even at the guest site of the Eu ones. In addition, slower average velocity than transverse sound velocity was obtained by Eu partial phonon DOS. Considering that heat is carried by the acoustic phonon in materials, the present results demonstrate that the moderate thermal insulation in Eu 3 Pd 20 Ge 6 is connected with the observation of slow average sound velocity at the Eu sites. (K.F.)

  1. Phase diagram of the Sb-Se-I system and thermodynamic properties of SbSeI

    International Nuclear Information System (INIS)

    Aliev, Z.S.; Musaeva, S.S.; Babanly, D.M.; Shevelkov, A.V.; Babanly, M.B.

    2010-01-01

    The Sb-Se-I system was investigated by using the DTA and XRD analyses and EMF measurements with an antimony electrode. The T-x diagram of the binary Sb-I system was accurately redefined. A number of polythermal sections and the projection of the liquidus surface were constructed. The fields of the primary crystallization, as well as the types and coordinates of non- and monovariant equilibria were determined. It is shown that the quasi-binary sections Sb 2 Se 3 -SbI 3 , Sb-SbSeI, SbI 3 -Se, and SbSeI-Se triangulate the Sb-Se-I system, leading to five independent subsystems. A broad area of immiscibility, that overlaps a certain part of the antimony primary crystallization field, was found. From the EMF measurements, the partial molar functions of antimony (ΔG-bar, ΔH-bar, ΔS-bar) as well as standard integral thermodynamic functions of SbSeI were calculated. The latter were found to have the following values: ΔG f,298 0 =-80.12±1.81kJ/mol; ΔH f,298 0 =-77.3±1.8kJ/mol; S 298 0 =155.2±9.5J/(molK).

  2. Phase diagram of the Sb-Se-I system and thermodynamic properties of SbSeI

    Energy Technology Data Exchange (ETDEWEB)

    Aliev, Z S; Musaeva, S S; Babanly, D M [Baku State University, General and Inorganic Chemistry Department (Azerbaijan); Shevelkov, A.V., E-mail: shev@inorg.chem.msu.r [Moscow Lomonosov State University, Chemistry Department (Russian Federation); Babanly, M.B., E-mail: Babanly_mb@rambler.r [Baku State University, General and Inorganic Chemistry Department (Azerbaijan)

    2010-09-03

    The Sb-Se-I system was investigated by using the DTA and XRD analyses and EMF measurements with an antimony electrode. The T-x diagram of the binary Sb-I system was accurately redefined. A number of polythermal sections and the projection of the liquidus surface were constructed. The fields of the primary crystallization, as well as the types and coordinates of non- and monovariant equilibria were determined. It is shown that the quasi-binary sections Sb{sub 2}Se{sub 3}-SbI{sub 3}, Sb-SbSeI, SbI{sub 3}-Se, and SbSeI-Se triangulate the Sb-Se-I system, leading to five independent subsystems. A broad area of immiscibility, that overlaps a certain part of the antimony primary crystallization field, was found. From the EMF measurements, the partial molar functions of antimony ({Delta}G-bar, {Delta}H-bar, {Delta}S-bar) as well as standard integral thermodynamic functions of SbSeI were calculated. The latter were found to have the following values: {Delta}G{sub f,298}{sup 0}=-80.12{+-}1.81kJ/mol; {Delta}H{sub f,298}{sup 0}=-77.3{+-}1.8kJ/mol; S{sub 298}{sup 0}=155.2{+-}9.5J/(molK).

  3. Thermochemical and phase diagram studies of the Sn-Zn-Ni system

    International Nuclear Information System (INIS)

    Gandova, V.D.; Broz, P.; Bursik, J.; Vassilev, G.P.

    2011-01-01

    Highlights: → Sn-Zn-Ni phase diagram in the vicinity of the Sn-Zn system. → Unidentified compositions (UX1-UX4) are repeatedly observed. → This indicates up to 6 ternary compounds in the system. → A ternary eutectic reaction at around 190 o C is found. - Abstract: The phase diagram Sn-Zn-Ni was studied by means of DSC and electron microprobe analysis. The samples were positioned in three isopleth sections with nickel contents of 0.04 (section 1), 0.08 (section 2) and 0.12 (section 3) mole fractions. The mole fractions of Sn corresponding to the particular sections were as follows: from 0.230 to 0.768 (section 1), from 0.230 to 0.736 (section 2); from 0.220 to 0.704 (section 3). Mixtures of pure metals were sealed under vacuum in quartz ampoules and annealed at 350 o C. The solid phases identified in the samples were: γ-(i.e. Ni 5 Zn 21 ), (Zn) and the ternary phase T1. Unidentified compositions were observed. One of them: UX1 (X Ni = 0.071 ± 0.005, X Sn = 0.439 ± 0.009 and X Zn = 0.490 ± 0.010) might indicate another (stable or metastable) ternary compound (T3) in the system Sn-Zn-Ni. Considering the data obtained by combining DSC with microstructure observations, the studied alloys could be divided in two groups (A and B). A ternary eutectic reaction at around 190 o C is common for the A-group alloys. The phases taking part in this reaction are, probably, Ni 5 Zn 21 , (Zn), (βSn) and liquid. B-group samples do not show ternary eutectic reaction and are also characterized by the presence of the ternary compound T1 (absent in the A-group alloys). Four other groups of thermal arrests were registered (TA 1 -TA 4 ). It was found that TA 2 peaks were characteristic for most of the A-group samples, while TA 1 peaks were registered with all B-group samples.

  4. Cathode and ion-luminescence of Eu:ZnO thin films prepared by reactive magnetron sputtering and plasma decomposition of non-volatile precursors

    Energy Technology Data Exchange (ETDEWEB)

    Gil-Rostra, Jorge [Instituto de Ciencia de Materiales de Sevilla, CSIC, Univ. Sevilla, C/Américo Vespucio 49, E-41092 Sevilla (Spain); Ferrer, Francisco J. [Centro Nacional de Aceleradores, CSIC, Univ. Sevilla, Av. Thomas A. Edison 7, E-41092 Sevilla (Spain); Martín, Inocencio R. [Departamento de Física Fundamental y Experimental, Electrónica y Sistemas, U. La Laguna, C/Astrofísico Francisco Sánchez s/n, E-38206 La Laguna, Santa Cruz de Tenerife (Spain); González-Elipe, Agustín R.; Yubero, Francisco [Instituto de Ciencia de Materiales de Sevilla, CSIC, Univ. Sevilla, C/Américo Vespucio 49, E-41092 Sevilla (Spain)

    2016-10-15

    This paper reports the luminescent behavior of Eu:ZnO thin films prepared by an one-step procedure that combines reactive magnetron sputtering deposition of ZnO with the plasma activated decomposition of a non-volatile acetylacetonate precursor of Eu sublimated in an effusion cell. Chemical composition and microstructure of the Eu:ZnO thin films have been characterized by several methods and their photo-, cathode- and ion-luminescent properties studied as a function of Eu concentration. The high transparency and well controlled optical properties of the films have demonstrated to be ideal for the development of cathode- and ion- luminescence sensors.

  5. One-dimensional zinc selenophosphates: A{sub 2}ZnP{sub 2}Se{sub 6} (A = K, Rb, Cs)

    Energy Technology Data Exchange (ETDEWEB)

    Haynes, Alyssa S.; Lee, Katherine; Kanatzidis, Mercouri G. [Department of Chemistry, Northwestern University, Evanston, IL (United States)

    2016-09-15

    The new compounds A{sub 2}ZnP{sub 2}Se{sub 6} (A = K, Rb, Cs) were synthesized via molten salt flux syntheses. The crystals feature one-dimensional {sup 1}/{sub ∞}[ZnP{sub 2}Se{sub 6}]{sup 2-} chains charge balanced by alkali metal ions between the chains. K{sub 2}ZnP{sub 2}Se{sub 6} crystallizes in the monoclinic space group P2{sub 1}/c; cell parameters a = 12.537(3) Aa, b = 7.2742(14) Aa, c = 14.164(3) Aa, β = 109.63(3) , Z = 4, and V = 1216.7(4) Aa{sup 3}. Rb{sub 2}ZnP{sub 2}Se{sub 6} and Cs{sub 2}ZnP{sub 2}Se{sub 6} are isotypic, crystallizing in the triclinic space group P anti 1. Rb{sub 2}ZnP{sub 2}Se{sub 6} has cell parameters of a = 7.4944(15) Aa, b = 7.6013(15) Aa, c = 12.729(3) Aa, α = 96.57(3) , β = 105.52(3) , γ = 110.54(3) , Z = 2, and V = 636.6(2) Aa{sup 3}. Cs{sub 2}ZnP{sub 2}Se{sub 6} has cell parameters of a = 7.6543(6) Aa, b = 7.7006(6) Aa, c = 12.7373(11) Aa, α = 97.007(7) , β = 104.335(7) , γ = 109.241(6) , Z = 2, and V = 669.54(10) Aa{sup 3}. (Copyright copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    International Nuclear Information System (INIS)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-01-01

    The stability of the crystalline phase of binary phase-change Ge x Sb 1-x films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T Ge p to the rate of change dT cryst /dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T cryst is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  7. UV excited downconversion luminescence properties of Eu3+: NaZnPO4 phosphors

    Science.gov (United States)

    Mukhopadhyay, Lakshmi; Rai, Vineet Kumar

    2018-05-01

    The structural and optical properties of Eu3+: NaZnPO4 phosphors prepared by chemical coprecipitation method have been studied. The phase formation and morphology of the phosphors have been confirmed by the X-ray diffraction (XRD) and Field emission scanning electron microscopy (FESEM) analysis. The downconversion emission spectra upon 392 nm excitation exhibit five emission bands centred at ˜ 575 nm, ˜ 590 nm, ˜ 612 nm, ˜ 660 nm and ˜ 702 nm corresponding to the 5D0→7F0, 5D0→7F1, 5D0→7F2, 5D0→7F3 and 5D0→7F4 transitions of Eu3+ ions respectively. The observed downconversion emission peaks can be explained with the help of suitable energy level diagram. The CIE chromaticity diagram shows the purity of the emitted colour from the prepared phosphors. The present phosphors emit in intense red region which shows the applicability of the phosphors in red light emitting display devices.

  8. Direct modulation of tracheal Cl--channel activity by 5,6- and 11,12-EET.

    Science.gov (United States)

    Salvail, D; Dumoulin, M; Rousseau, E

    1998-09-01

    Using microelectrode potential measurements, we tested the involvement of Cl- conductances in the hyperpolarization induced by 5,6- and 11,12-epoxyeicosatrienoic acid (EET) in airway smooth muscle (ASM) cells. 5,6-EET and 11,12-EET (0.75 microM) caused -5.4 +/- 1.1- and -3.34 +/- 0.95-mV hyperpolarizations, respectively, of rabbit tracheal cells (from a resting membrane potential of -53.25 +/- 0.44 mV), with significant residual repolarizations remaining after the Ca2+-activated K+ channels had been blocked by 10 nM iberiotoxin. In bilayer reconstitution experiments, we demonstrated that the EETs directly inhibit a Ca2+-insensitive Cl- channel from bovine ASM; 1 microM 5,6-EET and 1.5 microM 11,12-EET lowered the unitary current amplitude by 40 (n = 6 experiments) and 44.7% (n = 4 experiments), respectively. Concentration-dependent decreases in channel open probability were observed, with estimated IC50 values of 0.26 microM for 5,6- and 1.15 microM for 11,12-EET. Furthermore, pharmacomechanical tension measurements showed that both regioisomers induced significant bronchorelaxations in epithelium-denuded ASM strips. These results suggest that 5,6- and 11,12-EET can act in ASM as epithelium-derived hyperpolarizing factors.

  9. Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions.

    Science.gov (United States)

    Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter; Murty, B S; Suwas, Satyam; Mallik, Ramesh Chandra

    2018-02-12

    The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi 2 Te 3 ) nanoinclusions in Co 4 Sb 12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi 2 Te 3 nanoparticles were dispersed into bulk Co 4 Sb 12 by ball-milling. The bulk was fabricated by spark plasma sintering. The presence of Bi 2 Te 3 dispersion in Co 4 Sb 12 was confirmed by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and electron back scattered diffraction technique. Energy dispersive spectroscopy showed antimony (Sb) as an impurity phase for higher contents of Bi 2 Te 3 in the sample. The Seebeck coefficient (S) and electrical conductivity (σ) were measured in the temperature range of 350-673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in σ with Bi 2 Te 3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423-673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories.

  10. Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions.

    Science.gov (United States)

    Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter F; Murty, B S; Suwas, Satyam; Mallik, Ramesh Chandra

    2018-01-08

    The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi2Te3) nanoinclusions in Co4Sb12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi2Te3 nanoparticles were dispersed into bulk Co4Sb12 by ball-milling. The bulk was fabricated by spark plasma sintering (SPS). The presence of Bi2Te3 dispersion in Co4Sb12 was confirmed by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron back scattered diffraction (EBSD) technique. Energy dispersive spectroscopy (EDS) showed antimony (Sb) as an impurity phase for higher contents of Bi2Te3 in the sample. The Seebeck coefficient (S) and electrical conductivity () were measured in the temperature range of 350 - 673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in with Bi2Te3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423 - 673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories. © 2018 IOP Publishing Ltd.

  11. Structural transition of (InSb)n clusters at n = 6-10

    Science.gov (United States)

    Lu, Qi Liang; Luo, Qi Quan; Huang, Shou Guo; Li, Yi De

    2016-10-01

    An optimization strategy combining global semi-empirical quantum mechanical search with all-electron density functional theory was adopted to determine the lowest energy structure of (InSb)n clusters with n = 6-10. A new structural growth pattern of the clusters was observed. The lowest energy structures of (InSb)6 and (InSb)8 were different from that of previously reported results. Competition existed between core-shell and cage-like structures of (InSb)8. The structural transition of (InSb)n clusters occurred at size n = 8-9. For (InSb)9 and (InSb)10 clusters, core-shell structure were more energetically favorable than the cage. The corresponding electronic properties were investigated.

  12. Effect of ZnO-B{sub 2}O{sub 3} addition on the dielectric and the piezoelectric properties of lead-free (Na{sub 0.525}K{sub 0.443}Li{sub 0.037})(Nb{sub 0.883}Sb{sub 0.08}Ta{sub 0.037})O{sub 3} ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Kim, You-Seok; Yoo, Ju-Hyun [Semyung University, Jecheon (Korea, Republic of)

    2014-12-15

    (Na{sub 0.525}K{sub 0.443}Li{sub 0.037})(Nb{sub 0.883}Sb{sub 0.08}Ta{sub 0.037})O{sub 3} + x wt% ZnO-B{sub 2}O{sub 3} (NKLNST + x ZnO-B{sub 2}O{sub 3}) lead-free piezoelectric ceramics were prepared via a conventional solid-state reaction for various values of x = 0, 0.3, 0.6, 0.9, 1.2; then, the dielectric and the piezoelectric properties of these ceramics were investigated. A pure perovskite structure and a small secondary phase were observed in the X-ray diffraction patterns. For the 0.3-wt% ZnO-B{sub 2}O{sub 3} specimen, a density of ρ = 4.537 g/cm{sup 3}, an electromechanical coupling factor of k{sub P} = 0.432, a mechanical quality factor of Q{sub m} = 96, and piezoelectric constant of d{sub 33} = 209 pC/N were found to be optimal. These results indicate that the material with this composition is a promising candidate for use in a lead-free piezoelectric device.

  13. The new barium zinc mercurides Ba3ZnHg10 and BaZn0.6Hg3.4 – Synthesis, crystal and electronic structure

    International Nuclear Information System (INIS)

    Schwarz, Michael; Wendorff, Marco; Röhr, Caroline

    2012-01-01

    The title compounds Ba 3 ZnHg 10 and BaZn 0.6 Hg 3.4 were synthesized from stoichiometric ratios of the elements in Ta crucibles. Their crystal structures, which both represent new structure types, have been determined using single crystal X-ray data. The structure of Ba 3 ZnHg 10 (orthorhombic, oP28, space group Pmmn, a=701.2(3), b=1706.9(8), c=627.3(3)pm, Z=2, R1=0.0657) contains folded 4 4 Hg nets, where the meshes form the bases of flat rectangular pyramids resembling the structure of BaAl 4 . The flat pyramids are connected via Hg–Zn/Hg bonds, leaving large channels at the folds, in which Ba(1) and Hg(2) atoms alternate. Whereas the remaining Hg/Zn atoms form a covalent 3D network of three- to five-bonded atoms with short M–M distances (273–301 pm; CN 9–11), the Hg(2) atoms in the channels adopt a comparatively large coordination number of 12 and increased distances (317–348 pm) to their Zn/Hg neighbours. In the structure of BaZn 0.6 Hg 3.4 (cubic, cI320, space group I4 ¯ 3d, a=2025.50(7) pm, Z=64, R1=0.0440), with a chemical composition not much different from that of Ba 3 ZnHg 10 , the Zn/Hg atoms of the mixed positions M(1/2) are arranged in an slightly distorted primitive cubic lattice with a 4×4×4 subcell relation to the unit cell. The 24 of the originating 64 cubes contain planar cis tetramers Hg(5,6) 4 with Hg in a nearly trigonal planar or tetrahedral coordination. In another 24 of the small cubes, two opposing faces are decorated by Hg(3,4) 2 dumbbells, two by Ba(2) atoms respectively. The third type of small cubes are centered by Ba(1) atoms only. The complex 3D polyanionic Hg/Zn network thus formed is compared with the Hg partial structure in Rb 3 Hg 20 applying a group-subgroup relation. Despite their different overall structures, the connectivity of the negatively charged Hg atoms, the rather metallic Zn bonding characteristic (as obtained from FP-LAPW band structure calculations) and the coordination number of 16 for all Ba cations

  14. A novel double perovskite tellurate Eu3+-doped Sr2MgTeO6 red-emitting phosphor with high thermal stability

    Science.gov (United States)

    Liang, Jingyun; Zhao, Shancang; Yuan, Xuexia; Li, Zengmei

    2018-05-01

    A series of novel double perovskite tellurate red-emitting phosphors Sr2MgTeO6:xEu3+ (x = 0.05-0.40) were successfully synthesized by a high-temperature solid-state reaction method. The phase structure, photoluminescence properties and thermal stability of the phosphor were investigated in detail. The phosphor shows dominant emission peak at 614 nm belonging to the 5D0 → 7F2 electric dipole transition under 465 nm excitation. The luminescence intensity keeps increasing with increasing the content of Eu3+ to 25 mol%, and the critical transfer distance of Eu3+ was calculated to be 12 Å. The quenching temperature for Sr2MgTeO6:0.25Eu3+ was estimated to be above 500 K. This spectral feature reveals high color purity and excellent chromaticity coordinate characteristics. Therefore, Eu3+-doped Sr2MgTeO6 phosphors are potential red phosphors for blue chip-based white light-emitting diode and display devices.

  15. Origin and tectonic implications of the Zhaxikang Pb-Zn-Sb-Ag deposit in northern Himalaya: evidence from structures, Re-Os-Pb-S isotopes, and fluid inclusions

    Science.gov (United States)

    Zhou, Qing; Li, Wenchang; Qing, Chengshi; Lai, Yang; Li, Yingxu; Liao, Zhenwen; Wu, Jianyang; Wang, Shengwei; Dong, Lei; Tian, Enyuan

    2018-04-01

    The Zhaxikang Pb-Zn-Sb-Ag-(Au) deposits, located in the eastern part of northern Himalaya, totally contain more than 1.146 million tonnes (Mt) of Pb, 1.407 Mt of Zn, 0.345 Mt of Sb, and 3 kilotonnes (kt) of Ag. Our field observations suggest that these deposits are controlled by N-S trending and west- and steep-dipping normal faults, suggesting a hydrothermal rather than a syngenetic sedimentary origin. The Pb-Zn-Sb-Ag-(Cu-Au) mineralization formed in the Eocene as indicated by a Re-Os isochron age of 43.1 ± 2.5 Ma. Sulfide minerals have varying initial Pb isotopic compositions, with (206Pb/204Pb)i of 19.04-19.68, (207Pb/204Pb)i of 15.75-15.88, and (208Pb/204Pb)i of 39.66-40.31. Sulfur isotopic values display a narrow δ34S interval of +7.8-+12.2‰. These Pb-S isotopic data suggest that the Zhaxikang sources of Pb and S should be mainly from the coeval felsic magmas and partly from the surrounding Mesozoic strata including metasedimentary rocks and layered felsic volcanic rocks. Fluid inclusion studies indicate that the hydrothermal fluids have medium temperatures (200-336 °C) but varying salinities (1.40-18.25 wt.% NaCl equiv.) with densities of 0.75-0.95 g/cm3, possibly suggesting an evolution mixing between a high salinity fluid, perhaps of magmatic origin, with meteoric water.

  16. Brain imaging of serotonin 4 receptors in humans with [11C]SB207145-PET

    DEFF Research Database (Denmark)

    Marner, Lisbeth; Gillings, Nic; Madsen, Karine

    2010-01-01

    Pharmacological stimulation of the serotonin 4 (5-HT(4)) receptor has shown promise for treatment of Alzheimer's disease and major depression. A new selective radioligand, [(11)C]SB207145, for positron emission tomography (PET) was used to quantify brain 5-HT(4) receptors in sixteen healthy......(max) was in accordance with post-mortem brain studies (Spearman's r=0.83, p=0.04), and the regional binding potentials, BP(ND), were on average 2.6 in striatum, 0.42 in prefrontal cortex, and 0.91 in hippocampus. We found no effect of sex but a decreased binding with age (p=0.046). A power analysis showed that, given......-HT(4) receptor binding in human brain can be reliably assessed with [(11)C]SB207145, which is encouraging for future PET studies of drug occupancy or patients with neuropsychiatric disorders....

  17. The OsO(3)F(+) and mu-F(OsO(3)F)(2)(+) cations: their syntheses and study by Raman and (19)F NMR spectroscopy and electron structure calculations and X-ray crystal structures of [OsO(3)F][PnF(6)] (Pn = As, Sb), [OsO(3)F][HF](2)[AsF(6)], [OsO(3)F][HF][SbF(6)], and [OsO(3)F][Sb(3)F(16)].

    Science.gov (United States)

    Gerken, Michael; Dixon, David A; Schrobilgen, Gary J

    2002-01-28

    The fluoride ion donor properties of OsO(3)F(2) have been investigated. The salts [OsO(3)F][AsF(6)], [OsO(3)F][HF](2)[AsF(6)], mu-F(OsO(3)F)(2)[AsF(6)], [OsO(3)F][HF](2)[SbF(6)], and [OsO(3)F][HF][SbF(6)] have been prepared by reaction of OsO(3)F(2) with AsF(5) and SbF(5) in HF solvent and have been characterized in the solid state by Raman spectroscopy. The single-crystal X-ray diffraction studies of [OsO(3)F][AsF(6)] (P2(1)/n, a = 7.0001(11) A, c = 8.8629(13) A, beta = 92.270(7) degrees, Z = 4, and R(1) = 0.0401 at -126 degrees C), [OsO(3)F][SbF(6)] (P2(1)/c, a = 5.4772(14) A, b = 10.115(3) A, c = 12.234(3) A, beta = 99.321(5) degrees, Z = 4, and R(1) = 0.0325 at -173 degrees C), [OsO(3)F][HF](2)[AsF(6)] (P2(1)/n, a = 5.1491(9) A, b = 8.129(2) A, c = 19.636(7) A, beta = 95.099(7) degrees, Z = 4, and R(1) = 0.0348 at -117 degrees C), and [OsO(3)F][HF][SbF(6)] (Pc, a = 5.244(4) A, b = 9.646(6) A, c = 15.269(10) A, beta = 97.154(13) degrees, Z = 4, and R(1) = 0.0558 at -133 degrees C) have shown that the OsO(3)F(+) cations exhibit strong contacts to the anions and HF solvent molecules giving rise to cyclic, dimeric structures in which the osmium atoms have coordination numbers of 6. The reaction of OsO(3)F(2) with neat SbF(5) yielded [OsO(3)F][Sb(3)F(16)], which has been characterized by (19)F NMR spectroscopy in SbF(5) and SO(2)ClF solvents and by Raman spectroscopy and single-crystal X-ray diffraction in the solid state (P4(1)m, a = 10.076(6) A, c = 7.585(8) A, Z = 2, and R(1) = 0.0858 at -113 degrees C). The weak fluoride ion basicity of the Sb(3)F(16)(-) anion resulted in an OsO(3)F(+) cation (C(3)(v) point symmetry) that is well isolated from the anion and in which the osmium is four-coordinate. The geometrical parameters and vibrational frequencies of OsO(3)F(+), ReO(3)F, mu-F(OsO(3)F)(2)(+), (FO(3)Os--FPnF(5))(2), and (FO(3)Os--(HF)(2)--FPnF(5))(2) (Pn = As, Sb) have been calculated using density functional theory methods.

  18. Synthesis optimisation and characterisation of the organic-inorganic layered materials ZnS(m-xylylenediamine){sub 1/2} and ZnS(p-xylylenediamine){sub 1/2}

    Energy Technology Data Exchange (ETDEWEB)

    Luberda-Durnaś, K. [Institute of Geological Sciences PAS, Research Centre in Krakow, Senacka 1, Krakow 31-002 (Poland); Guillén, A. González [Faculty of Chemistry, Jagiellonian University, Ingardena 3, Krakow 30-060 (Poland); Łasocha, W., E-mail: lasocha@chemia.uj.edu.pl [Jerzy Haber Institute of Catalysis and Surface Chemistry PAS, Niezapominajek 8, Krakow 30-239 (Poland); Faculty of Chemistry, Jagiellonian University, Ingardena 3, Krakow 30-060 (Poland)

    2016-06-15

    Hybrid organic-inorganic layered materials of the type ZnS(amine){sub 1/2}, where amine=m-xylylenediamine (MXDA) or p-xylylenediamine (PXDA), were synthesised using a simple solvothermal method. Since the samples crystallised in the form of very fine powder, X-ray powder diffraction techniques were used for structural characterisation. The crystal structure studies, involving direct methods, show that both compounds crystallised in the orthorhombic crystal system, but in different space groups: ZnS(MXDA){sub 1/2} in non-centrosymmetric Ccm2{sub 1}, ZnS(PXDA){sub 1/2} in centrosymmetric Pcab. The obtained materials are built according to similar orders: semiconducting monolayers with the formula ZnS, parallel to the (010) plane, are separated by diamines. The organic and inorganic fragments are connected by covalent bonds between metal atoms of the layers and nitrogen atoms of the amino groups. The optical properties of the hybrid materials differ from those of their bulk counterpart. In both compounds a blue-shift of about 0.8 or 0.9 eV was observed with reference to the bulk phase of ZnS. - Highlights: • New hybrid compounds: ZnS(MXDA){sub 1/2} and ZnS(PXDA){sub 1/2} were obtained. • Hybrids were studied using XRD, TG/DSC, XRK, SEM, UV–vis spectroscopy. • Structures of both materials were solved by powder diffraction methods.

  19. Analysis of the electrical characteristics of Zn/ZnSe/n-Si/Au-Sb structure fabricated using SILAR method as a function of temperature

    Energy Technology Data Exchange (ETDEWEB)

    Guezeldir, B. [Department of Physics, Faculty of Sciences, University of Atatuerk, 25240 Erzurum (Turkey); Saglam, M., E-mail: msaglam@atauni.edu.t [Department of Physics, Faculty of Sciences, University of Atatuerk, 25240 Erzurum (Turkey); Ates, A. [Department of Physics, Faculty of Sciences, University of Atatuerk, 25240 Erzurum (Turkey)

    2010-09-10

    The Successive Ionic Layer Adsorption and Reaction (SILAR) method has been used to deposit ZnSe thin film onto Si substrate to obtain the Zn/ZnSe/n-Si/Au-Sb sandwich structure. The X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM) methods are used to investigate the structural and morphological properties of films. The XRD and SEM studies reveal that the films are covered well on Si substrate and have good polycrystalline structure and crystalline levels. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of this structure have been investigated as a function of the temperature (80-300 K) with 20 K steps. The ideality factor (n) and zero-bias barrier height ({Phi}{sub b0}) value which obtained from I-V curves were found to be strongly temperature dependent. While {Phi}{sub b0} increases with increasing temperature, n decreases. This behavior of the {Phi}{sub b0} and n can be attributed to barrier inhomogeneities at the metal-semiconductor (M-S) interface. The temperature dependence of the I-V characteristics of the Zn/ZnSe/n-Si/Au-Sb structure can reveal the existence of a double Gaussian distribution. The mean barrier height and the Richardson constant values are obtained as 0.925 eV and 1.140 eV, 130 A/cm{sup 2} K{sup 2} and 127 A/cm{sup 2} K{sup 2}, from the modified Richardson plot, respectively. Furthermore, the barrier height and carrier concentration are calculated from reverse bias C{sup -2}-V measurements at 200 kHz frequency as a function of the temperature.

  20. Densification, characterization and oxidation studies of novel TiB{sub 2}+EuB{sub 6} compounds

    Energy Technology Data Exchange (ETDEWEB)

    Murthy, T.S.R.Ch., E-mail: murthi@barc.gov.in [Materials Group, Bhabha Atomic Research Centre, Mumbai (India); Sonber, J.K.; Vishwanadh, B. [Materials Group, Bhabha Atomic Research Centre, Mumbai (India); Nagaraj, A. [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Mumbai (India); Sairam, K.; Bedse, R.D.; Chakravartty, J.K. [Materials Group, Bhabha Atomic Research Centre, Mumbai (India)

    2016-06-15

    TiB{sub 2}+EuB{sub 6} ceramic samples with different EuB{sub 6} contents were fabricated using hot -pressing technique. The introduction of EuB{sub 6} promoted the sinterability, fracture toughness and oxidation resistance of TiB{sub 2}. 98.7% TD achieved by adding 2.5% EuB{sub 6} to TiB{sub 2} by hot pressing at a relatively low temperature of 1750 °C, 35 MPa, 1h. Formation of complete solid solution of TiB{sub 2}+EuB{sub 6} observed for all the samples by XRD, EDS and EBSD. Hardness of all samples is measured in the range of 24–27 GPa ∼50% higher fracture toughness value of 5.2 MPa m{sup 1/2} was obtained in the 2.5% EuB{sub 6} contained sample compared to monolithic TiB{sub 2}. Enhancement of oxidation resistance of TiB{sub 2} was observed by EuB{sub 6} addition due to the formation of EuBO{sub 3} and Eu{sub 2}O{sub 3}. Oxidized cross section of TiB{sub 2}+EuB{sub 6} sample was measured as 340 μm, which is ∼35% less than that of monolithic TiB{sub 2} (520 μm), after oxidation at 1400 °C for 8h. - Highlights: • 98.7% TD achieved by adding 2.5% EuB{sub 6} to TiB{sub 2}. • Formation of complete solid solution of TiB{sub 2}+EuB{sub 6} observed. • Fracture toughness value of 5.2 MPa m{sup 1/2} was obtained in the TiB{sub 2}+2.5% EuB{sub 6}. • EuBO{sub 3} and Eu{sub 2}O{sub 3} are enhanced the oxidation resistance of TiB{sub 2} + EuB{sub 6} compound. • Oxide layer thicknesses of TiB{sub 2} and TiB{sub 2}+EuB{sub 6} are 520 μm and 340 μm respectively.

  1. Phase III Randomized Study of SB5, an Adalimumab Biosimilar, Versus Reference Adalimumab in Patients With Moderate‐to‐Severe Rheumatoid Arthritis

    OpenAIRE

    Weinblatt, Michael E.; Baranauskaite, Asta; Niebrzydowski, Jaroslaw; Dokoupilova, Eva; Zielinska, Agnieszka; Jaworski, Janusz; Racewicz, Artur; Pileckyte, Margarita; Jedrychowicz‐Rosiak, Krystyna; Cheong, Soo Yeon; Ghil, Jeehoon; Sokolovic, S.; Mekic, M.; Prodanovic, N.; Gajic, B.

    2017-01-01

    Objective SB5 is a biosimilar agent for adalimumab (ADA). The aim of this study was to evaluate the efficacy, pharmacokinetics (PK), safety, and immunogenicity of SB5 in comparison with reference ADA in patients with rheumatoid arthritis (RA). Methods In this phase III, randomized, double‐blind, parallel‐group study, patients with moderately to severely active RA despite treatment with methotrexate were randomized 1:1 to receive SB5 or reference ADA at a dosage of 40 mg subcutaneously every o...

  2. Mechanical properties and fracture mechanism of as-cast Mg77TM12Zn5Y6 (TM = Cu, Ni) bulk amorphous matrix composites

    International Nuclear Information System (INIS)

    Qiu, K.Q.; Hu, N.N.; Zhang, H.B.; Jiang, W.H.; Ren, Y.L.; Liaw, P.K.

    2009-01-01

    Comparative investigations on the microstructures, thermal stability and mechanical properties of Mg 77 Cu 12 Zn 5 Y 6 and Mg 77 Ni 12 Zn 5 Y 6 bulk metallic glass matrix composites were carried out by using scanning electron microscopy (SEM), DSC and compressive tester. The results show that the microstructure of as-cast samples with 3 mm in diameter for Cu-containing alloy is consisted of Mg flakes and dotted Mg 2 Cu phase in the amorphous matrix, while the as-cast Ni-containing alloy with the same diameter is mainly consisted of Mg flakes in the amorphous matrix. The glass transition temperature and supercooled liquid region are 413 K and 27 K for the Cu-containing, 443 K and 32 K for the Ni-containing amorphous matrix composites, respectively. The fracture strength, yield strength and plastic strain are 532 MPa, 390 MPa and 2.4% for the Cu-containing alloy, 667 MPa, 412 MPa and 7% for the Ni-containing alloy, respectively. Furthermore, the fracture mechanism for the amorphous matrix composites was discussed according to both the fracture surfaces and the stress-strain curves.

  3. The study of structural and optical properties of (Eu, La, Sm) codoped ZnO nanoparticles via a chemical route

    Energy Technology Data Exchange (ETDEWEB)

    Lang, Jihui; Zhang, Qi; Han, Qiang; Fang, Yue; Wang, Jiaying; Li, Xiuyan; Liu, Yanqing [Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping, 136000 (China); Wang, Dandan [Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China); Yang, Jinghai, E-mail: jhyang1@jlnu.edu.cn [Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping, 136000 (China); Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China)

    2017-06-15

    The (Eu, La, Sm) ions were doped into ZnO nanoparticles by a chemical route, and the substitution of (Eu, La, Sm) for Zn{sup 2+} ions was proved by analytic techniques of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman, transmission electron microscope (TEM), photoluminescence (PL) and UV–vis absorption spectroscopy. The results revealed that the codoping did not change the wurtzite structure of ZnO nanoparticles, but the diameter of the nanoparticles decreased with increasing the rare earth (RE) doping concentrations. The optical bandgaps calculated through UV–visible absorption spectroscopy were found to decrease from 3.26 to 3.14 eV with increasing the RE doping concentrations, which also proved by the slight shift of UV positions in PL spectra. The sharp red emissions located at 578.2, 590.1 and 615.7 nm were originated from the 4f-4f transitions in Eu{sup 3+} ions under excitation of 325 nm. And these red emissions of Eu{sup 3+} ions showed a strong correlation with the energy storage centers of oxygen vacancies in the samples which was introduced by the other RE ions of La{sup 3+} and Sm{sup 3+} codoping. - Highlights: • Doping of (Eu, La, Sm) ions into ZnO nanoparticles is realized by a chemical route. • Eu{sup 3+}-related red emissions from intra-4f follow a similar trend as broad defect emission. • Red emissions of Eu{sup 3+} enhance with RE codoping due to oxygen vacancies as energy storage centers. • The bandgap can be tuned by RE codoping, which shows a prospect for the visible utilization.

  4. Sb-Te Phase-change Materials under Nanoscale Confinement

    Science.gov (United States)

    Ihalawela, Chandrasiri A.

    Size, speed and efficiency are the major challenges of next generation nonvolatile memory (NVM), and phase-change memory (PCM) has captured a great attention due to its promising features. The key for PCM is rapid and reversible switching between amorphous and crystalline phases with optical or electrical excitation. The structural transition is associated with significant contrast in material properties which can be utilized in optical (CD, DVD, BD) and electronic (PCRAM) memory applications. Importantly, both the functionality and the success of PCM technology significantly depend on the core material and its properties. So investigating PC materials is crucial for the development of PCM technology to realized enhanced solutions. In regards to PC materials, Sb-Te binary plays a significant role as a basis to the well-known Ge-Sb-Te system. Unlike the conventional deposition methods (sputtering, evaporation), electrochemical deposition method is used due to its multiple advantages, such as conformality, via filling capability, etc. First, the controllable synthesis of Sb-Te thin films was studied for a wide range of compositions using this novel deposition method. Secondly, the solid electrolytic nature of stoichiometric Sb2Te3 was studied with respect to precious metals. With the understanding of 2D thin film synthesis, Sb-Te 1D nanowires (18 - 220 nm) were synthesized using templated electrodeposition, where nanoporous anodic aluminum oxide (AAO) was used as a template for the growth of nanowires. In order to gain the controllability over the deposition in high aspect ratio structures, growth mechanisms of both the thin films and nanowires were investigated. Systematic understanding gained thorough previous studies helped to formulate the ultimate goal of this dissertation. In this dissertation, the main objective is to understand the size effect of PC materials on their phase transition properties. The reduction of effective memory cell size in conjunction with

  5. Determination of the enthalpy of fusion and thermal diffusivity for ternary Cu_6_0_−_xSn_xSb_4_0 alloys

    International Nuclear Information System (INIS)

    Zhai, W.; Zhou, K.; Hu, L.; Wei, B.

    2016-01-01

    Highlights: • The increasing Sn content reduces the liquidus temperature. • High Sn content results in lower enthalpy of fusion by polynomial functions. • The thermal diffusivity drops from the solid toward the semi-solid state. • Undercoolability of alloys with primary Cu_2Sb phase is stronger than others. - Abstract: The liquidus and solidus temperatures, enthalpy of fusion, and the temperature dependence of thermal diffusivity for ternary Cu_6_0_−_xSn_xSb_4_0 alloys were systematically measured by DSC and laser flash methods. It is found that both the liquidus temperature and the enthalpy of fusion decrease with the rise of Sn content, and their relationships with alloy composition were established by polynomial functions. The thermal diffusivity usually drops from the solid toward the semi-solid state. The undercoolability of those liquid Cu_6_0_−_xSn_xSb_4_0 alloys with primary Cu_2Sb solid phase is stronger than the others with primary β(SnSb) intermetallic compound, and the increase of cooling rate facilitates further undercooling. Microstructural observation indicates that both of the primary Cu_2Sb and β(SnSb) intermetallic compounds in ternary Cu_6_0_−_xSn_xSb_4_0 alloys grow in faceted mode, and develop into coarse flakes and polygonal blocks.

  6. Li{sub 3}Gd{sub 3}Te{sub 2}O{sub 12}:Eu{sup 3+}- an intense red phosphor for solid state lighting applications

    Energy Technology Data Exchange (ETDEWEB)

    Tiwari, Hansnath [Department of Chemistry, Indian Institute of Technology Madras, Chennai 600036 (India); Asiri Naidu, S. [Department of Chemistry, Rajiv Gandhi University of Knowledge Technologies, Nuzvid, Andhra Pradesh 521202 (India); Varadaraju, U.V., E-mail: varada@iitm.ac.in [Department of Chemistry, Indian Institute of Technology Madras, Chennai 600036 (India)

    2017-02-15

    Li{sub 3}Gd{sub 3−3x}Eu{sub 3x}Te{sub 2}O{sub 12} (x=0.05−1.0) phases with garnet structure were synthesized by high temperature solid state reaction and the photoluminescence properties were investigated. The appearance of bands due to intra 4 f transitions of Gd{sup 3+} in the excitation spectra recorded by monitoring the 612 nm emission line of the activator indicates Gd{sup 3+}→Eu{sup 3+} energy transfer in this host lattice. Under 395 nm excitation, the electric dipole transition is predominant in the emission spectrum of Eu{sup 3+} and is in agreement with the C{sub 2} point group (noncentrosymmetric) of the EuO{sub 8} polyhedron. The critical concentration of the Eu{sup 3+} activator in this series was found to be 0.6 (x=0.2) above which, concentration quenching occurs. The emission intensity of the phosphor composition, Li{sub 3}Gd{sub 2.4}Eu{sub 0.6}Te{sub 2}O{sub 12} is ~4 times that of the commercial sample of Y{sub 2}O{sub 3}:Eu{sup 3+} phosphor. - Highlights: • New Eu{sup 3+} doped garnet. • Intense electric dipole emission. • Gd{sup 3+}→Eu{sup 3+} energy transfer.

  7. Molecular beam epitaxy of GeTe-Sb2Te3 phase change materials studied by X-ray diffraction

    International Nuclear Information System (INIS)

    Shayduk, Roman

    2010-01-01

    The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied in situ using reflection high energy electron diffraction (RHEED). Four growth regimes of GST on GaSb(001) were observed: amorphous, polycrystalline, incubated epitaxial and direct epitaxial. Amorphous film grows for substrate temperatures below 100 C. For substrate temperatures in the range 100-160 C, the film grows in polycrystalline form. Incubated epitaxial growth is observed at temperatures from 180 to 210 C. This growth regime is characterized by an initial 0.6nm thick amorphous layer formation, which crystallizes epitaxially as the film thickness increases. The determined lattice constant of the films is 6.01 A, very close to that of the metastable GST phase. The films predominantly possess an epitaxial cube-on-cube relationship. At higher temperatures the films grow epitaxially, however the growth rate is rapidly decreasing with temperature. At temperatures above 270 C the growth rate is zero. The composition of the grown films is close to 2:2:5 for Ge, Sb and Te, respectively. The determined crystal structure of the films is face centered cubic (FCC) with a rhombohedral distortion. The analysis of X-ray peak widths gives a value for the rhombohedral angle of 89.56 . We observe two types of reflections in reciprocal space indicating two FCC sublattices in

  8. A new experimental phase diagram investigation of Cu-Sb.

    Science.gov (United States)

    Fürtauer, Siegfried; Flandorfer, Hans

    The binary system Cu-Sb is a constituent system that is studied in investigations of technically important ternary and quaternary alloy systems (e.g., casting alloys and lead-free solders). Although this binary system has been thoroughly investigated over the last century, there are still some uncertainties regarding its high-temperature phases. Thus, parts of its phase diagram have been drawn with dashed lines in reviews published in the literature. The aim of this work was to resolve these uncertainties in the current phase diagram of Cu-Sb by performing XRD, SEM-EDX, EPMA, and DTA. The results from thermal analysis agreed well with those given in the literature, although some modifications due to the invariant reaction temperatures were necessary. In particular, reactions located on the Cu-rich side of the nonquenchable high-temperature β phase (BiF 3 -type) left considerable scope for interpretation. Generally, the structural descriptions of the various binary phases given in the literature were verified. The range of homogeneity of the ε phase (Cu 3 Ti type) was found to be higher on the Sb-rich side. Most of the reaction temperatures were verified, but a few had to be revised, such as the eutectoid reaction [Formula: see text] at 440 °C (found to occur at 427 °C in this work) and the eutectoid reaction [Formula: see text] at 400 °C (found to occur at 440 °C in this work). Further phase transformations that had previously only been estimated were confirmed, and their characteristic temperatures were determined.

  9. Electronic Structure of Eu6C60

    Institute of Scientific and Technical Information of China (English)

    WANG Xiao-Xiong; LI Hong-Nian; XU Ya-Bo; WANG Peng; ZHANG Wen-Hua; XU Fa-Qiang

    2009-01-01

    We study the valence band of Eu-intercalated C60 by synchrotron radiation photoelectron spectroscopy to un-derstand the ferromagnetism (FM) and the giant magnetoresistance (GMR) of Eu6C60. The results reveal the semiconducting property and the remarkable 5d6s-π hybridization. Eu-C60 bonding has both ionic and covalent contributions. No more than half the 5d6s electrons transfer from Eu to the LUMO derived band of C60, and the LUMO+1 derived band is not filled. The remaining valence electrons of Eu, together with some π (LUMO, HOMO and HOMO-1) electrons, constitute the covalent bond. The electronic structure implies that the magnetic coupling in Eu6C60 should be through the intra-atomic f-sd exchange and the medium of the π electrons. The possibility of the GMR being tunnelling magnetoresistance is ruled out.

  10. Characteristics of surface acoustic waves in (11\\bar 2 0)ZnO film/ R-sapphire substrate structures

    Science.gov (United States)

    Wang, Yan; Zhang, ShuYi; Xu, Jing; Xie, YingCai; Lan, XiaoDong

    2018-02-01

    (11\\bar 2 0)ZnO film/ R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [1ī00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity ( v p), electromechanical coupling coefficient ( k 2), temperature coefficient of frequency ( TCF) and reflection coefficient ( r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k 2 of 4.95% in (90°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate associated with a phase velocity of 5300 m/s; and the 0th Love wave in (0°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate has a maximum k 2 of 3.86% associated with a phase velocity of 3400 m/s. And (11\\bar 2 0)ZnO film/ R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.

  11. Epitaxial growth of Ge-Sb-Te based phase change materials

    International Nuclear Information System (INIS)

    Perumal, Karthick

    2013-01-01

    Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb 2 Te 3 thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb 2 Te 3 to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

  12. Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-doped GaN crystals

    International Nuclear Information System (INIS)

    Mezdrogina, M.M.; Krivolapchuk, V.V.; Petrov, V.N.; Rodin, S.N.; Cherenkov, A.V.

    2006-01-01

    It is shown that the effect of dopants on the photoluminescence spectrum depends on the conductivity type of the initial GaN crystals. The sensitizing effect of emission is observed in wurtzite p-GaN crystals doped with Er. The same effect was previously observed in such crystals doped with Eu and Zn. In n-type GaN crystals sequentially doped with Eu, Zn, and Er, the emission is observed in visible and infrared ranges of the photoluminescence spectrum [ru

  13. Origin, secret, and application of the ideal phase-change material GeSbTe

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Noboru [Advanced Technology Research Laboratories, Panasonic Corporation, 3-4 Hikaridai, Seika-cho, Soraku-gun, 619-0237 Kyoto (Japan); Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 4, 1-1-1, Higashi, Tsukuba, Ibaraki 305-8562 (Japan)

    2012-10-15

    Discovery of the GeSbTe phase-change alloy in particular along the GeTe-Sb{sub 2}Te{sub 3} tie-line took place in the mid-1980s. The amorphous alloys showed ideal properties, for example, high thermal stability at r.t. and laser-induced rapid crystallization with large optical changes. Thereafter, GeSbTe was successively applied to various optical disks such as DVDs and BDs. Through DSC and XRD analyses, the appearance of the metastable phase having a NaCl-type structure was observed over a wide compositional region. This was the ''key'' to realizing the ideal phase-change properties. During this year, the role of the constituent elements of Ge and Sb became clear by RMC modeling using AXS data at SPring-8, where the ''nucleation dominant crystallization process'' was well explained. The aspect of the latest Blu-ray Disc (BD) product of Panasonic: GeSbTe phase-change films are utilized in every recording layer. It is seen that the front-side recording layers, L1 and L2, are highly transparent. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Fabrication and Luminescent properties of ZnWO{sub 4}:Eu{sup 3+}, Dy{sup 3+} white light-emitting phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Zhai, Yongqing, E-mail: zhaiyongqinghbu@163.com; Wang, Meng; Zhao, Qian; Yu, Jiabao; Li, Xuemin

    2016-04-15

    ZnWO{sub 4}:Eu{sup 3+},Dy{sup 3+} white light-emitting phosphors were prepared by a hydrothermal method followed with calcination process. The as-synthesized phosphors were characterized by X-ray powder diffraction (XRD), Fourier transform infrared (FTIR) spectrum, Raman spectra, scanning electron microscope (SEM), transmission electron microscope (TEM), diffused reflectance spectra, photoluminescence excitation and emission spectra, and photoluminescence decay curves. Furthermore, external quantum efficiency of ZnWO{sub 4}:Eu{sup 3+},Dy{sup 3+} was determined. The results showed that the obtained phosphors have monoclinic wolframite structure. The particles of the phosphors was nearly spherical in shape, and the particle size was about 70–100 nm. Upon excitation at UV light, the white light-emitting can be obtained by combining the blue–green emission of tungstate group and characteristic emission of Eu{sup 3+} and Dy{sup 3+}. Based on the excitation/emission spectra and decay curves, the energy transfer and photoluminescence mechanism for ZnWO{sub 4}:Eu{sup 3+}, Dy{sup 3+} system were discussed.

  15. Transportation properties of amorphous state InSb and its metastable middle phase

    International Nuclear Information System (INIS)

    Cao Xiaowen

    1990-09-01

    The variation of the substrate temperature induces the metal-semiconductor transition in the condensation InSb films at low temperatrue. The electron conduction is dominant in the metal-type amorphous InSb and the hole in semiconductor-type one. In the metal-type amorphous InSb the electron-electron is correlated under the field above 0.1T in the temperature region of liquid nitrogen. The structure relaxation leads to not only the increase of the short range order but also the change of electron structure in metal-type amorphous InSb. The first conductance jump originates mainly from the increase of Hall mobility of the carrier, i.e. the increase of the short range order, and the system relaxes from the liquid-like to the lattice-like amorphous state. The three types of the crystallization phase transition for the metal-type amorphous InSb present obviously different transportation behaviours. Both metal-type amorphous state and metastable middle phase of InSb all are one of superconducting system with the lowest carrier concentration (n 0 ∼10 18 cm -3 ). Superconducting T c of the metastable middle phase is related to the state density near Fermi surface, i.e. the higher T c corresponds to the higher state density. The quasi-two-dimensional structure is favourable to superconductivity

  16. Temperature dependence of structural and optical properties of GeSbTe alloy thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chabli, A. E-mail: achabli@cea.fr; Vergnaud, C.; Bertin, F.; Gehanno, V.; Valon, B.; Hyot, B.; Bechevet, B.; Burdin, M.; Muyard, D

    2002-09-01

    Ge{sub 2}Sb{sub 2}Te{sub 5} films sandwiched by ZnS-SiO{sub 2} layers were studied by spectroscopic ellipsometry from room temperature up to 800 deg. C. An irreversible modification of both materials is pointed out. ZnS cubic phase precipitation occurs after heating at 650 deg. C, shown by grazing incidence X-ray diffraction. Chemical modification in phase change material is observed above 300 deg. C, revealed by a typical behavior of a transparent layer.

  17. Mass transport in Ti0.5Sb2Te3 phase-change nanobridge

    International Nuclear Information System (INIS)

    Ji, Xinglong; Wu, Liangcai; Lv, Shilong; Rao, Feng; Zhu, Min; Song, Zhitang; Zhou, Xilin; Feng, Songlin

    2014-01-01

    Investigation of atomic migration behavior in nanoscale phase-change material is very valuable for phase-change memory applications. In this work, Ti 0.5 Sb 2 Te 3 -based phase-change nanobridges were fabricated and mass transport by atomic migration was studied. A 3-D finite-element simulation on the electrothermal field was introduced to describe the electrothermal environment in the phase-change region. During the nanosecond operation, an obvious compositional distribution resulting from atomic migration was observed in the Ti 0.5 Sb 2 Te 3 phase-change nanobridge. Based on the mass continuity equation, a physical model for mass transport is proposed to illustrate that the density variation during the amorphous-to-crystalline structural transformation is the main reason for the atomic migration in nanoscale Ti 0.5 Sb 2 Te 3 phase-change material

  18. Development of sputtered CuSbS2 thin films grown by sequential deposition of binary sulfides

    Science.gov (United States)

    Medina-Montes, M. I.; Vieyra-Brito, O.; Mathews, N. R.; Mathew, X.

    2018-05-01

    In this work, CuSbS2 thin films were developed by annealing binary precursors deposited sequentially by rf magnetron sputtering. The recrystallization process was optimized and the films were extensively characterized using a number of tools such as XRD, Raman, SEM, energy dispersive x-ray spectroscopy, atomic force microscopy, Hall, UV–vis spectroscopy, Ellipsometry, Seebeck, and photoresponse. The influence of annealing temperature on the structure, morphology, elemental composition, optical and electrical properties are reported. Annealing below 350 °C resulted in famatinite (Cu3SbS4) and chalcostibite (CuSbS2) ternaries as well as binary phases. Phase-pure chalcostibite was obtained in the range of 350 °C–375 °C. At 400 °C, although CuSbS2 was predominant, tetrahedrite phase (Cu12Sb4S13) appeared as an additional phase. The elemental composition of the films was slightly sulfur deficient, and the atomic percentages of Cu, Sb and S showed a dependence on annealing temperature. The material properties of the phase-pure CuSbS2 thin films are: optical band gap in the range of 1.5–1.62 eV, absorption coefficient close to 105 cm‑1, atomic ratios of Cu/Sb ∼1 and (Cu + Sb)/S ∼1.2, crystal size 18.3–24.5 nm and grain size 50–300 nm. The films were photo-sensitive, showed p-type semiconductor behavior. Electrical resistivity, carrier density and hole mobility were 94–459 Ω cm, 1.6–7.0 × 1015 cm‑3 and 8.4–9.5 cm2 V‑1 s respectively.

  19. Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-Doped GaN crystals

    International Nuclear Information System (INIS)

    Mezdrogina, M. M.; Krivolapchuk, V. V.; Petrov, V. N.; Rodin, S. N.; Cherenkov, A. V.

    2006-01-01

    It is shown that the effect of dopants on the photoluminescence spectrum depends on the conductivity type of the initial GaN crystals. Sensitization of emission is observed in wurtzite p-GaN crystals doped with Er. The same effect was previously observed in such crystals doped with Eu and Zn. In n-type GaN crystals sequentially doped with Eu, Zn, and Er, emission is observed in the visible (λ = 360-440 and 530-560 nm) and IR (λ = 1.54 μm) spectral regions

  20. Data and analyses of phase relations in the Ce-Fe-Sb ternary system.

    Science.gov (United States)

    Zhu, Daiman; Xu, Chengliang; Li, Changrong; Guo, Cuiping; Zheng, Raowen; Du, Zhenmin; Li, Junqin

    2018-02-01

    These data and analyses support the research article "Experimental study on phase relations in the Ce-Fe-Sb ternary system" Zhu et al. (2017) [1]. The data and analyses presented here include the experimental results of XRD, SEM and EPMA for the determination of the whole liquidus projection and the isothermal section at 823 K in the Ce-Fe-Sb system. All the results enable the understanding of the constituent phases and the solidification processes of the as-cast alloys as well as the phase relations and the equilibrium regions at 823 K in the Ce-Fe-Sb ternary system over the entire composition.

  1. Synthesis and characterization of Fe-Ti-Sb intermetallic compounds: Discovery of a new Slater-Pauling phase

    Science.gov (United States)

    Naghibolashrafi, N.; Keshavarz, S.; Hegde, Vinay I.; Gupta, A.; Butler, W. H.; Romero, J.; Munira, K.; LeClair, P.; Mazumdar, D.; Ma, J.; Ghosh, A. W.; Wolverton, C.

    2016-03-01

    Compounds of Fe, Ti, and Sb were prepared using arc melting and vacuum annealing. Fe2TiSb , expected to be a full Heusler compound crystallizing in the L 21 structure, was shown by XRD and SEM analyses to be composed of weakly magnetic grains of nominal composition Fe1.5TiSb with iron-rich precipitates in the grain boundaries. FeTiSb, a composition consistent with the formation of a half-Heusler compound, also decomposed into Fe1.5TiSb grains with Ti-Sb rich precipitates and was weakly magnetic. The dominant Fe1.5TiSb phase appears to crystallize in a defective L 21 -like structure with iron vacancies. Based on this finding, a first-principles DFT-based binary cluster expansion of Fe and vacancies on the Fe sublattice of the L 21 structure was performed. Using the cluster expansion, we computationally scanned >103 configurations and predict a novel, stable, nonmagnetic semiconductor phase to be the zero-temperature ground state. This new structure is an ordered arrangement of Fe and vacancies, belonging to the space group R 3 m , with composition Fe1.5TiSb , i.e., between the full- and half-Heusler compositions. This phase can be visualized as alternate layers of L 21 phase Fe2TiSb and C 1b phase FeTiSb, with layering along the [111] direction of the original cubic phases. Our experimental results on annealed samples support this predicted ground-state composition, but further work is required to confirm that the R 3 m structure is the ground state.

  2. Structures and solid solution mechanisms of pyrochlore phases in the systems Bi{sub 2}O{sub 3}-ZnO-(Nb, Ta){sub 2}O{sub 5}

    Energy Technology Data Exchange (ETDEWEB)

    Tan, K.B., E-mail: tankb@science.upm.edu.m [Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Khaw, C.C. [Department of Engineering, Universiti Tunku Abdul Rahman, 53300 Setapak, Kuala Lumpur (Malaysia); Lee, C.K. [Academic Science Malaysia, 902-4 Jalan Tun Ismail, 50480 Kuala Lumpur (Malaysia); Zainal, Z. [Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Miles, G.C. [Department of Engineering Materials, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom)

    2010-10-22

    Research highlights: {yields} Combined XRD and ND Rietveld structural refinement of pyrochlores. {yields} Structures and solid solution mechanisms of Bi-pyrochlores. {yields} Bi and Zn displaced off-centre to different 96g A-site positions. {yields} Summary of composition-structure-property of Bi-pyrochlores. - Abstract: The crystal structures of two pyrochlore phases have been determined by Rietveld refinement of combined X-ray and neutron powder diffraction data. These are stoichiometric, Bi{sub 1.5} ZnTa{sub 1.5}O{sub 7} and non-stoichiometric Bi{sub 1.56}Zn{sub 0.92}Nb{sub 1.44}O{sub 6.86}. In both structures, Zn is distributed over A- and B-sites; Bi and Zn are displaced off-centre, to different 96g A-site positions; of the three sets of oxygen positions, O(1) are full, O(2) contain vacancies and O(3) contain a small number of oxygen, again in both cases. Comparisons between these structures, those of related Sb analogues and literature reports are made.

  3. Luminescence properties of ZnMoO{sub 4}:Eu{sup 3+}:Y{sup 3+} materials synthesized by solution combustion synthesis method

    Energy Technology Data Exchange (ETDEWEB)

    Verma, Naveen, E-mail: vermanaveen17@gmail.com; Singh, Krishan Chander; Jindal, Jitender; Yadav, Suprabha [Department of chemistry, Maharshi Dayanand University, Rohtak-124001 – India (India); Mari, Bernabe; Mollar, Miguel [Institut de Disseny per la Fabricació Automatitzada - Departament de Física Aplicada, Universitat Politècnica de València, Camí de Vera s/n, 46022 València (Spain)

    2016-04-13

    The Zn{sub (1-x-y)}MoO{sub 4}:Eu{sup 3+}{sub (x)}: Y{sup 3+}{sub (y)} (x = 1 mol% and y = 1 or 2 mol%) compounds were prepared by combustion synthesis method. The crystal structure of the samples was identified by X-ray diffraction (XRD). The photoluminescence properties were investigated and it is observed that the co-doping of Y{sup 3+} enhances the luminescence emission intensity of ZnMoO{sub 4}:Eu{sup 3+} material. The Y{sup 3+} acts as a sensitizer in the ZnMoO{sub 4}:Eu{sup 3+} lattice. The particle size is calculated from XRD data by using Scherer Equation. The particles has been found in the range of 30-40 nm.

  4. Synthesis and thermal stability of the sodalite Na6Zn2[Al6Si6O24](SO4)2 and its reaction with hydrogen

    DEFF Research Database (Denmark)

    Heiden, Frank; Nielsen, Ulla Gro; Warner, Terence Edwin

    2012-01-01

    Ca2[Al6Si6O24](SO4)2. Na6Zn2[Al6Si6O24](SO4)2 was shown to be largely immiscible with nosean, Na8[Al6Si6O24]SO4 in the solid-state. Na6Zn2[Al6Si6O24](SO4)2 decomposes above 700 °C, yielding nosean, Na8[Al6Si6O24]SO4; willemite, Zn2SiO4; gahnite, ZnAl2O4; and presumably a glass phase, 2Na2O•9SiO2...

  5. White LED based on CaAl2Si2O8:Eu2+ Mn2+ phosphor and CdS/ZnS quantum dots

    Science.gov (United States)

    Shen, Changyu; Zhong, Chuan; Hou, Qianglong; Li, Ke

    2011-02-01

    Core/shell CdS/ZnS quantum dots (QDs) with the emission wavelength of 610nm, was synthesized by thermal deposition using cadmium oxide and selenium as precursors in a hot lauric acid and hexadecylamine trioctylphosphine oxide hybrid. CaAl2Si2O8:Eu2+ Mn2+ phosphor was synthesized by high-temperature solid state reaction at 1290 °C for 2 hours under the H2 reducing atmosphere, and X-ray powder diffraction analysis confirmed the formation of it. It has two emission bands peaking at 420 nm and 580nm originated from the transition 5d to 4f of Eu2+ and 4T1-6A1 of Mn2+, respectively. Blends of CaAl2Si2O8:Eu2+,Mn2+ phosphor and CdS/ZnS QDs exhibited the prominent spectral evolution with an increasing content of QDs. A hybrid white LED, which combines a blue LED with the blend of CaAl2Si2O8:Eu2+ Mn2+ phosphor and QDs with a weight ratio of 2:1, with the CIE coordinate of (0.3183, 0.3036) and CRI of 85 was obtained.

  6. Epitaxial growth of Ge-Sb-Te based phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Perumal, Karthick

    2013-07-30

    Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb{sub 2}Te{sub 3} thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb{sub 2}Te{sub 3} to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

  7. Nitrogen-doped Sb-rich Si–Sb–Te phase-change material for high-performance phase-change memory

    International Nuclear Information System (INIS)

    Zhou, Xilin; Wu, Liangcai; Song, Zhitang; Cheng, Yan; Rao, Feng; Ren, Kun; Song, Sannian; Liu, Bo; Feng, Songlin

    2013-01-01

    The effects of nitrogen doping on the phase-change performance of Sb-rich Si–Sb–Te materials are systemically investigated, focusing on the chemical state and the role of nitrogen upon crystallization. The tendency of N atoms to bond with Si (SiN x ) in the crystalline film is analyzed by X-ray photoelectron spectroscopy. The microstructures of the materials mixed with Sb 2 Te crystal grains and amorphous Si/SiN x regions are elucidated via in situ transmission electron microscopy, from which a percolation behavior is demonstrated to possibly describe the random crystallization feature in the nucleation-dominated nanocomposite material. The phase-change memory cells based on N-doped Sb-rich Si–Sb–Te materials display more stable and reliable electrical performance than the nitrogen-free ones. An endurance characteristic in the magnitude of 10 7 cycles of the phase-change memory cells is realized with moderate nitrogen addition, meaning that the nitrogen incorporation into Si–Sb–Te material is a suitable method to achieve high-performance phase-change memory for commercial applications

  8. Optical characterization of Zn-doped In{sub 0.14}Ga{sub 0.86}As{sub 0.13}Sb{sub 0.87} layers grown by liquid phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Diaz-Reyes, Joel, E-mail: jdiazr2010@yahoo.com [CIBA-IPN, Ex-Hacienda de San Juan Molino Km. 1.5. Tepetitla, Tlaxcala 90700. Mexico (Mexico); Rodriguez-Fragoso, Patricia; Mendoza-Alvarez, Julio Gregorio [Departamento de Fisica, CINVESTAV-IPN, A.P. 14-740, Mexico, D.F. 07000 (Mexico)

    2013-02-15

    Quaternary layers were grown by liquid phase epitaxy on (1 0 0) GaSb substrates under lattice-matching conditions. The low-temperature photoluminescence of p-type In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} was obtained as a function of incorporated zinc concentration. The photoluminescence spectra were interpreted using a model which takes into account nonparabolicity of the valence band. Calculations of the peak position and photoluminescence transitions were performed. Both the band filling as well as band tailing due to Coulomb interaction of free carriers with ionized impurities and shrinkage due to exchange interaction between free carriers were considered in order to properly account for the observed features of photoluminescence spectra. It is proposed that low-temperature photoluminescence band-to-band energy transition can be used to obtain the carrier concentration in p-type In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y}. This method could be used to estimate free carrier concentration ranging from 6.036 Multiplication-Sign 10{sup 16} to 1.350 Multiplication-Sign 10{sup 18} cm{sup -3}. - Highlights: Black-Right-Pointing-Pointer In this work the optical characterization of InGaAsSb highly doped with zinc by grown LPE.is reported Black-Right-Pointing-Pointer It analyses the LT-PL of p-type InGaAsSb layersis analzysed as a function of incorporated zinc concentration. Black-Right-Pointing-Pointer The PL was interpreted using a model that takes into account nonparabolicity of the valence band. Black-Right-Pointing-Pointer The band-to-band transition energy can be used to estimate the hole concentration in InGaAsSb.

  9. Vapour transport growth of ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Mofor, A.C.; Bakin, A.S.; Elshaer, A.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Fuhrmann, D.; Hangleiter, A. [Technical University Braunschweig, Institute of Applied Physics, Braunschweig (Germany); Bertram, F.; Christen, J. [University of Magdeburg, Department of Solid State Physics, Magdeburg (Germany)

    2007-07-15

    The fabrication of low-dimensional ZnO structures has attracted enormous attention as such nanostructures are expected to pave the way for many interesting applications in optoelectronics, spin electronics gas sensor technology and biomedicine. Many reported fabrication methods, especially for ZnO nanorods are mostly based on catalyst-assisted growth techniques that employ metal-organic sources and other contaminating agents like graphite to grow ZnO nanorods at relatively high temperatures. We report on catalyst-free vapour-phase epitaxy growth of ZnO nanorods on 6H-SiC and (11-20)Al{sub 2}O{sub 3} using purely elemental sources at relatively low temperatures and growth pressure. ZnO nanorods with widths of 80-900 nm and lengths of up to 12 {mu}m were obtained. Nanorod density on the order of 10{sup 9} cm{sup -2} with homogenous luminescence and high purity was also noted. (orig.)

  10. Superlattice-like SnSb{sub 4}/Ga{sub 3}Sb{sub 7} thin films for ultrafast switching phase-change memory application

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yifeng [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Shanghai (China); Jiangsu University of Technology, School of Mathematics and Physics, Changzhou (China); He, Zifang; Zhai, Jiwei [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Shanghai (China); Wu, Pengzhi; Lai, Tianshu [Sun Yat-Sen University, State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Guangzhou (China); Song, Sannian; Song, Zhitang [Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Shanghai (China)

    2015-11-15

    The carrier concentration of Sb-rich phase SnSb{sub 4}, Ga{sub 3}Sb{sub 7} and superlattice-like [SnSb{sub 4}(3.5 nm)/Ga{sub 3}Sb{sub 7}(4 nm)]{sub 7} (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson-Mehl-Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film. (orig.)

  11. Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Sadananda Kumar, N., E-mail: sadanthara@gmail.com; Bangera, Kasturi V.; Shivakumar, G. K. [National Institute of Technology Karnataka, Surathkal, Thin Films Laboratory, Department of Physics (India)

    2015-07-15

    Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm{sup 2} V{sup –1} s{sup –1}, and a hole concentration of 6.25 × 10{sup 17} cm{sup –3}.

  12. Adducts of UF5 with SbF5 and structure of UF5 . 2SbF5

    International Nuclear Information System (INIS)

    Sawodny, W.; Rediess, K.

    1980-01-01

    Both α-UF 5 and β-UF 5 form only a 1:2 compound UF 5 . 2SbF 5 reacting directly with SbF 5 , from which UF 5 . SbF 5 can be obtained by thermal decomposition. UF 5 . 2SbF 5 crystallizes in the monoclinic space group P2 1 /c with the following lattice constants a = 8.110(4), b = 14.129(6), c = 10.032(6) A and β = 96.97(5) 0 ; Z = 4. An X-ray study shows centrosymmetric four-membered rings of alternating UF 8 and SbF 6 polyhedra connected by other SbF 6 entities. This structure is similar to that of UOF 5 . 2SbF 5 , but the distorted pentagonal-bipyramidal coordination of the U atom found there is increased to a dodecahedral coordination by an additional U-F-Sb bridge, though with a somewaht larger UF distance. (author)

  13. Construction of order mesoporous (Eu–La)/ZnO composite material and its luminescent characters

    Energy Technology Data Exchange (ETDEWEB)

    Bao, Na; Liu, Yu; Li, Zi-Wei [School of Chemistry & Environmental Engineering, Changchun University of Science and Technology, Changchun 130022 (China); Yu, Hui, E-mail: yh2001101@163.com [School of Chemistry & Environmental Engineering, Changchun University of Science and Technology, Changchun 130022 (China); Bai, Hao-tian [School of Chemistry & Environmental Engineering, Changchun University of Science and Technology, Changchun 130022 (China); Xia, Long, E-mail: xialong_aron@163.com [School of Materials Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209 (China); Feng, Da-wei [Changchun University of Science and Technology Science Park, Changchun 130022 (China); Guangdong College of Business and Technology, Zhaoqing 526020 (China); Zhang, Hong-bo; Dong, Xiang-ting; Wang, Tian-yang; Han, Ji; Wu, Rong-yi; Zhang, Qi [School of Chemistry & Environmental Engineering, Changchun University of Science and Technology, Changchun 130022 (China)

    2016-09-15

    For the first time, the order mesoporous zinc oxide was synthesized by a soft template synthesis method. The Eu and La phosphate were introduced into the prepared mesoporous zinc oxide by the high temperature solid phase method, and got the mesoporous rare earth/zinc oxide composite materials. The luminescence characters of the materials were studied. The influences of La to Eu luminescent properties had been studied, and the optimum proportion of Eu and La was discussed. The influences of La and Eu to ZnO luminescence properties were also been studied. La phosphate had the large influence to Eu luminescent. ZnO had a strong emission peak at 469 nm, which overlapped with the {sup 7}F{sub 0}–{sup 5}D{sub 2} transition excitation peak of Eu at 465 nm. It indicated that the effective energy transfer happened between ZnO and Eu, which strongly enhanced the luminescence intensity of Eu. At the same time, the Eu and La phosphates could regulate the defect density of ZnO, which could regulate the luminescent intensity of ZnO, and realized the adjustment of luminescent color between green and red light.

  14. Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application.

    Science.gov (United States)

    Chen, Xin; Zheng, Yonghui; Zhu, Min; Ren, Kun; Wang, Yong; Li, Tao; Liu, Guangyu; Guo, Tianqi; Wu, Lei; Liu, Xianqiang; Cheng, Yan; Song, Zhitang

    2018-05-01

    Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb 2 Te alloy. Sc 0.1 Sb 2 Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb 2 Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed.

  15. Magnetic phase transitions and anomalous transport properties in Ca-doped Eu hexaborides

    International Nuclear Information System (INIS)

    Rhyee, J. S.; Oh, B. H.; Cho, B. K.

    2004-01-01

    The temperature- and field-dependent magnetization M(T,H), electrical resistivity ρ(T,H), and Hall resistivity ρ xy (T,H) were measured for single crystals of a series of compounds Eu 1,x Ca x B 6 (x =0.0, 0.2, 0.4, 0.6, and 0.9). The ferromagnetic transition temperature of EuB 6 (T c = 12 K) was suppressed with small doping of Ca for Eu 0.8 Ca 0.2 B 6 (T c = 5.5 K) as evidenced by M(T) and a sharp drop in ρ(T). On the other hand, an antiferromagnetic transition was observed, rather than ferromagnetic transition, for Eu 0.6 Ca 0.4 B 6 (T N = 4.5 K) and Eu 0.4 Ca 0.6 B 6 (T N = 3 K). At the same time, a rapid increase of ρ(T) was found at low temperatures (T ≤ 10 K). The upturn of ρ(T) was suppressed with increasing applied magnetic field. From an analysis of the Hall resistivity ρ xy , the anomalous increase of ρ(T) and its suppression were found to be due to the dramatic variations in the charge carrier density n eff (T,H) and the Hall mobility μ H (T,H).

  16. Structural phase stability of ThSb and ThAs under pressure

    International Nuclear Information System (INIS)

    Venkatasubramaniam, K.; Rajagopalan, M.; Palanivel, B.; Kalpana, G.

    1997-01-01

    The high-pressure behaviour of thorium monopnictides is of considerable interest as these systems exhibit structural phase transitions under pressure. At ambient conditions these compounds crystallize in the NaCl-type(B1) structure. Experiments show that with the application of pressure these compounds transform to the CsCl-type (B2) structure. ThSb and ThAs are found to exhibit B1-B2 transition in the pressure range between 9-12 GPa and 1826 GPa respectively. In this work, we present the electronic and high-pressure behaviour of ThAs and ThSb performed using the tight-binding linear muffin-tin orbital method. The total energies within the atomic sphere approximation were calculated as a function of volume for both the B1 and B2 structures. The total energy calculations reveal that both ThSb and ThAs are stable in the B1 structure at ambient conditions and undergo structural transition to the B2 structure at pressures 78 and 240 kbar respectively, which are in good agreement with the experimental values. The calculated values of equilibrium lattice parameter and the transition pressure are found to be in good agreement with the experimental results. (author)

  17. A family of acetato-diphenoxo triply bridged dimetallic Zn(II)Ln(III) complexes: SMM behavior and luminescent properties.

    Science.gov (United States)

    Oyarzabal, Itziar; Artetxe, Beñat; Rodríguez-Diéguez, Antonio; García, JoséÁngel; Seco, José Manuel; Colacio, Enrique

    2016-06-21

    Eleven dimetallic Zn(II)-Ln(III) complexes of the general formula [Zn(µ-L)(µ-OAc)Ln(NO3)2]·CH3CN (Ln(III) = Pr (1), Nd (2), Sm (3), Eu (4), Gd (5), Tb (6), Dy (7), Ho (8), Er (9), Tm (10), Yb (11)) have been prepared in a one-pot reaction from the compartmental ligand N,N'-dimethyl-N,N'-bis(2-hydroxy-3-formyl-5-bromo-benzyl)ethylenediamine (H2L). In all these complexes, the Zn(II) ions occupy the internal N2O2 site whereas the Ln(III) ions show preference for the O4 external site. Both metallic ions are bridged by an acetate bridge, giving rise to triple mixed diphenoxido/acetate bridged Zn(II)Ln(III) compounds. The Nd, Dy, Er and Yb complexes exhibit field induced single-ion magnet (SIM) behaviour, with Ueff values ranging from 14.12 to 41.55 K. The Er complex shows two relaxation processes, but only the second relaxation process with an energy barrier of 21.0 K has been characterized. The chromophoric L(2-) ligand is able to act as an "antenna" group, sensitizing the near-infrared (NIR) Nd(III) and Yb(III)-based luminescence in complexes 2 and 11 and therefore, both compounds can be considered as magneto-luminescent materials. In addition, the Sm(III), Eu(III) and Tb(III) derivatives exhibit characteristic emissions in the visible region.

  18. Distribution, speciation and availability of antimony (Sb) in soils and terrestrial plants from an active Sb mining area

    International Nuclear Information System (INIS)

    Okkenhaug, Gudny; Zhu Yongguan; Luo Lei; Lei Ming; Li Xi; Mulder, Jan

    2011-01-01

    Here, we present one of the first studies investigating the mobility, solubility and the speciation-dependent in-situ bioaccumulation of antimony (Sb) in an active Sb mining area (Xikuangshan, China). Total Sb concentrations in soils are high (527-11,798 mg kg -1 ), and all soils, including those taken from a paddy field and a vegetable garden, show a high bioavailable Sb fraction (6.3-748 mg kg -1 ), dominated by Sb(V). Elevated concentrations in native plant species (109-4029 mg kg -1 ) underpin this. Both chemical equilibrium studies and XANES data suggest the presence of Ca[Sb(OH) 6 ] 2 , controlling Sb solubility. A very close relationship was found between the citric acid extractable Sb in plants and water or sulfate extractable Sb in soil, indicating that citric acid extractable Sb content in plants may be a better predictor for bioavailable Sb in soil than total acid digestible Sb plant content. - Highlights: → Antimony (Sb) in soils from an active Sb mining area is highly bioavailable. → Sb occurs mainly as Sb(V) in Sb mining impacted soils and plants. → Sb solubility in Sb mining impacted soils is governed by Ca[Sb(OH) 6 ] 2 . → Citric acid extractable Sb in plants and bioavailable Sb in soils are strongly correlated. - Antimony (Sb) in soils from an active Sb mining area is highly bioavailable and controlled by the solubility of calcium antimonate.

  19. Hydrothermal synthesis of 4ZnO·B2O3·H2O:Ln3 + (Ln = Eu, Tb) phosphors: Morphology-tunable and luminescence properties

    Science.gov (United States)

    Cao, Shiwei; Jiao, Yang; Han, Weifang; Ge, Chunhua; Song, Bo; Wang, Jie; Zhang, Xiangdong

    2018-02-01

    4ZnO·B2O3·H2O:Ln3 + (Ln = Eu, Tb) phosphors with different morphologies have been successfully synthesized via one-step hydrothermal method through regulating the molar amount of Eu3 + and Tb3 +. Comprehensive scanning electron microscopy (SEM), X-ray diffraction (XRD) Fourier transform infrared spectrum (FT-IR) and inductively coupled plasma atomic emission spectrometer (ICP-AES) characterizations all confirm that obtained products are 4ZnO·B2O3·H2O:Ln3 + (Ln = Eu, Tb). The experimental results displayed that the morphology and photoluminescence of compounds is regularly changed with increased the molar amount of rare earth ions. For the Eu3 +-doped, Tb3 +-doped and Eu3 +/Tb3 + co-doped 4ZnO·B2O3·H2O phosphors of morphologies, the rod-like structures gradually changed to flower-like structures, fine wire-like structure and hybrid structure, respectively. To their photoluminescence, the Eu3 + shows a red emission (615 nm); the Tb3 + shows a green emission (545 nm); for the Eu3 +/Tb3 + co-doped 4ZnO·B2O3·H2O phosphors, a combination of blue (5d-4f of Eu2 +), green (5D4-7F5 of Tb3 +) and red (5D0-7F2 of Eu3 +) emissions emerges to achieve white emission. In addition, the energy transfer among Eu3 +, Eu2 + and Tb3 + ions was also discussed.

  20. Oral administration of the 5-HT6 receptor antagonists SB-357134 and SB-399885 improves memory formation in an autoshaping learning task.

    Science.gov (United States)

    Perez-García, Georgina; Meneses, Alfredo

    2005-07-01

    In this work we aimed to re-examine the 5-HT6 receptor role, by testing the selective antagonists SB-357134 (1-30 mg/kg p.o.) and SB-399885 (1-30 mg/kg p.o.) during memory consolidation of conditioned responses (CR%), in an autoshaping Pavlovian/instrumental learning task. Bioavailability, half-life and minimum effective dose to induce inappetence for SB-357134 were 65%, 3.4 h, and 30 mg/kg p.o., and for SB-399885 were 52%, 2.2 h, and 50 mg/kg p.o., respectively. Oral acute and chronic administration of either SB-357134 or SB-399885 improved memory consolidation compared to control groups. Acute administration of SB-357134, at 1, 3, 10 and 30 mg/kg, produced a CR% inverted-U curve, eliciting the latter dose a 7-fold increase relative to saline group. Acute injection of SB-399885 produced significant CR% increments, being 1 mg/kg the most effective dose. Repeated administration (7 days) of either SB-357134 (10 mg/kg) or SB-399885 (1 mg/kg) elicited the most significant CR% increments. Moreover, modeling the potential therapeutic benefits of 5-HT6 receptor blockade, acute or repeated administration of SB-399885, at 10 mg/kg reversed memory deficits produced by scopolamine or dizocilpine, and SB-357134 (3 and 10 mg/kg) prevented amnesia and even improved performance. These data support the notion that endogenously 5-HT acting, via 5-HT6 receptor, improves memory consolidation.

  1. Effects of the copper content on the structural and electrical properties of Cu{sub 2}ZnSnSe{sub 4} bulks

    Energy Technology Data Exchange (ETDEWEB)

    Tsega, Moges, E-mail: mogestsega@yahoo.com [Department of Physics, University of the Free State (Qwaqwa Campus), Private Bag X13, Phuthaditjhaba 9866 (South Africa); Department of Physics, Bahir Dar University (Ethiopia); Dejene, F.B.; Koao, L.F. [Department of Physics, University of the Free State (Qwaqwa Campus), Private Bag X13, Phuthaditjhaba 9866 (South Africa)

    2016-01-01

    We have investigated the concept of defect in Cu{sub x}ZnSnSe{sub 4} (x=1.6–2.0) and Cu{sub y}(Zn{sub 0.9}Sn{sub 1.1})Se{sub 4} (y= 1.6–2.0) bulks prepared by liquid-phase sintering at 600 °C for 2 h with soluble sintering aids of Sb{sub 2}S{sub 3} and Te. All samples were found to exhibit p-type semiconductor for Cu{sub x}ZnSnSe{sub 4}, while n-type of behavior obtained at y= 1.8–2.0 for Cu{sub y}(Zn{sub 0.9}Sn{sub 1.1})Se{sub 4} pellets. The Cu vacancy acts as an acceptor point defect to form the p-type semiconductor, and Sn{sup 4+} acts as a donor to form the n-type behavior for the Sn-rich CZTSe. SEM images of pellets show dense surface morphology, and increase in grain size upon Cu inclusion. The largely increased Hall mobility and the slightly changed carrier concentration for Cu{sub y}(Zn{sub 0.9}Sn{sub 1.1})Se{sub 4} with increasing the Cu content is related to the types of its defects. At y=2.0 with carrier concentration of 4.88×10{sup 17} cm{sup −3} showed the highest mobility of around 58 cm{sup 2}/V s. Based upon the proposed point defects, the CZTSe property can be consistently explained.

  2. Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

    International Nuclear Information System (INIS)

    Fu Jing; Shen Xiang; Nie Qiuhua; Wang Guoxiang; Wu Liangcai; Dai Shixun; Xu Tiefeng; Wang, R.P.

    2013-01-01

    Highlights: ► Mg-doped Ge 2 Sb 2 Te 5 (GST) phase change films with higher resistance and better thermal stability have been proposed. ► The increase of Mg content result in an enhancement in crystallization temperature, activation energy and electrical resistance. ► The proper Mg addition in GST can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase. ► The formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhancement thermal stability in Mg-doped GST films. - Abstract: Mg-doped Ge 2 Sb 2 Te 5 (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On the other hand, the proper Mg concentration ranging from 13.6 to 31.1 at.% can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase and suppress the formation of the hexagonal close-packed (hcp) crystalline phase. X-ray photoelectron spectra (XPS) further confirm that the formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhanced thermal stability in Mg-doped GST films.

  3. Molecular beam epitaxy of GeTe-Sb{sub 2}Te{sub 3} phase change materials studied by X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Shayduk, Roman

    2010-05-20

    The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied in situ using reflection high energy electron diffraction (RHEED). Four growth regimes of GST on GaSb(001) were observed: amorphous, polycrystalline, incubated epitaxial and direct epitaxial. Amorphous film grows for substrate temperatures below 100 C. For substrate temperatures in the range 100-160 C, the film grows in polycrystalline form. Incubated epitaxial growth is observed at temperatures from 180 to 210 C. This growth regime is characterized by an initial 0.6nm thick amorphous layer formation, which crystallizes epitaxially as the film thickness increases. The determined lattice constant of the films is 6.01 A, very close to that of the metastable GST phase. The films predominantly possess an epitaxial cube-on-cube relationship. At higher temperatures the films grow epitaxially, however the growth rate is rapidly decreasing with temperature. At temperatures above 270 C the growth rate is zero. The composition of the grown films is close to 2:2:5 for Ge, Sb and Te, respectively. The determined crystal structure of the films is face centered cubic (FCC) with a rhombohedral distortion. The analysis of X-ray peak widths gives a value for the rhombohedral angle of 89.56 . We observe two types of reflections in reciprocal space indicating two FCC sublattices in

  4. Structural and Optical Properties of Eu Doped ZnO Nanorods prepared by Pulsed Laser Deposition

    KAUST Repository

    Alarawi, Abeer

    2014-01-01

    Nano structured wide band gap semiconductors have attracted attention of many researchers due to their potential electronic and optoelectronic applications. In this thesis, we report successful synthesis of well aligned Eu doped ZnO nano

  5. Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio

    International Nuclear Information System (INIS)

    Jeong, Jeung-hyun; Lee, Hyun Seok; Lee, Suyoun; Lee, Taek Sung; Kim, Won Mok; Wu Zhe; Cheong, Byung-ki; Kim, Seul Cham; Oh, Kyu Hwan

    2009-01-01

    A phase change memory (PCM) utilizes resistivity changes accompanying fast transitions from an amorphous to a crystalline phase (SET) and vice versa (RESET). An investigation was made on the SET characteristics of PCM cells with Ge-doped SbTe (Ge-ST) materials of two different Sb : Te ratios (4.53 and 2.08). For the material of higher Sb : Te (4.53), a SET operation was completed within several tens of nanoseconds via nucleation-free crystallization whereas the material of lower Sb : Te (2.08) rendered a slower SET operation requiring several hundred nanoseconds for a nucleation-mediated crystallization. From measurements of nucleation and growth kinetics via laser-induced crystallization, the observed SET characteristics of the former case were found to derive from a growth time about 10 3 times shorter than the nucleation time and those of the latter from a much shorter nucleation time as well as a longer growth time than in the former case. The measured nucleation kinetics of the lower Sb : Te (2.08) material is unexpected from the existing data, which has led us to advance an interesting finding that there occurs a trend-reversing change in the nucleation kinetics of the Ge-ST materials around the eutectic composition (Sb : Te ∼2.6); nucleation is accelerated with the increase in the Sb : Te ratio above Sb : Te of 2.6, but with a decrease in the Sb : Te ratio below it.

  6. Structure of Ga2O3(ZnO)6: a member of the homologous series Ga2O3(ZnO)m

    International Nuclear Information System (INIS)

    Michiue, Yuichi; Kanke, Yasushi; Kimizuka, Noboru

    2008-01-01

    The structure of Ga 2 O 3 (ZnO) 6 was determined using singlecrystal X-ray diffraction techniques in the space group Cmcm. The metal ion sublattice resembles some of the Zn ions in the wurtzite ZnO structure. The oxygen ion sublattice in Ga 2 O 3 (ZnO) 6 also resembles some of the O ions in ZnO. Structural relationships between Ga 2 O 3 (ZnO) 6 and ZnO are discussed, illustrating the process for obtaining the centrosymmetric Ga 2 O 3 (ZnO) 6 structure from the noncentrosymmetric ZnO. Structures of phases in the homologous series Ga 2 O 3 (ZnO) m are predicted on the basis of the structural data for Ga 2 O 3 (ZnO) 6 . The structures of even m are constructed by simply extending the structure units seen in Ga 2 O 3 (ZnO) 6 , while those of odd m consist of structure units which are of different types from those used for even m. (orig.)

  7. ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates

    International Nuclear Information System (INIS)

    Lin, T.K.; Chang, S.J.; Su, Y.K.; Chiou, Y.Z.; Wang, C.K.; Chang, S.P.; Chang, C.M.; Tang, J.J.; Huang, B.R.

    2005-01-01

    Homoepitaxial and heteroepitaxial ZnSe metal-semiconductor-metal (MSM) photodetectors were both fabricated and characterized. It was found that homoepitaxial ZnSe MSM photodetector could provide us smaller dark current and large photocurrent. With an incident wavelength of 448 nm, it was found that the maximum responsivities for the homoepitaxial and heteroepitaxial ZnSe photodetectors were 0.128 and 0.045 A/W, which corresponds to a quantum efficiency of 36 and 12%, respectively. Furthermore, it was found that we achieved the minimum noise equivalent power (NEP) of 7.6 x 10 -13 W and the maximum normalized detectivity (D *) of 9.3 x 10 11 cm Hz 0.5 W -1 from our homoepitaxial ZnSe photodetector. In contrast, NEP and D * of the heteroepitaxial ZnSe photodetector were 2.9 x 10 -12 W and 2.44 x 10 11 cm Hz 0.5 W -1 , respectively

  8. Synthesis and thermoelectric performance of a p-type Bi0.4Sb1.6Te3 material developed via mechanical alloying

    International Nuclear Information System (INIS)

    Jimenez, Sandra; Perez, Jose G.; Tritt, Terry M.; Zhu, Song; Sosa-Sanchez, Jose L.; Martinez-Juarez, Javier; López, Osvaldo

    2014-01-01

    Highlights: • This paper shows a Bi 1.6 Sb 0.4 Te 3 alloy prepared by MA-SPS process. • A ZT value of about 1.2–1.3 around 360 K was achieved for this compound. • The lower sintering process was carried out in a short time. • The resulting material has a very fine microstructure and high density. - Abstract: A p-type Bi 0.4 Sb 1.6 Te 3 thermoelectric compound was fabricated via mechanical alloying of bismuth, antimony and tellurium elemental powders as starting materials. The mechanically alloyed compositions were sintered through a spark-plasma sintering (SPS) process. The effect of the milling time was investigated. In order to characterize the powders obtained via mechanical alloying, X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) analysis were used. The morphological evolution was studied by scanning electron microscopy (SEM). Results showed that the p-type Bi 0.4 Sb 1.6 Te 3 compound was formed after 2 h of milling. Further, the variation of milling time showed that the synthesized phase was stable. All the powders exhibit the same morphology albeit with slight differences. Measurements of the electrical resistivity, Seebeck coefficient and thermal conductivity were performed in the temperature range 300–520 K for the SPS samples. The resulting thermoelectric figure of merit ZT reaches a maximum of 1.2 at 360 K for the p-type bulk material with a 5 h milling time. This study demonstrates the possibility of preparing thermoelectric materials of high performance and short processing time

  9. Synthesis and complex study of the crystal hydrate Zn{sub 2}ZrF{sub 8}.12H{sub 2}O

    Energy Technology Data Exchange (ETDEWEB)

    Voit, Elena; Didenko, Nina; Gayvoronskaya, Kseniya; Slobodyuk, Arseniy; Gerasimenko, Andrey [Institute of Chemistry, Far-Eastern Branch, Russian Academy of Sciences, 159 Prosp. 100-Letiya Vladivostoka, 690022 Vladivostok (Russian Federation)

    2016-05-15

    The synthesis and study of structure and properties of a crystal hydrate of the composition Zn{sub 2}ZrF{sub 8}.12H{sub 2}O were performed by XRD, DTA analysis as well as IR, Raman, and {sup 1}H, and {sup 19}F NMR, including {sup 19}F MAS NMR spectroscopy. The compound crystallizes in the monoclinic syngony with the following unit cell parameters: a = 20.9649 (12), b = 9.6851 (6), c = 24.0209 (14) Aa, β = 103.742 (2) , space group C2/c, Z = 12. The structure is built from monomeric complex [ZrF{sub 8}]{sup 4-} and [Zn(H{sub 2}O){sub 6}]{sup 2+} linked through hydrogen bonds of different lengths (O-H..F and O-H..O). The peculiarity of the structure consists in the presence of short hydrogen bonds (interatomic O..F distances 2.5-2.6 Aa). Analysis of the IR and Raman spectra allowed interpretation of bands corresponding to vibrations of the [ZrF{sub 8}]{sup 4-} anion and to describe hydrogen bonds in the structure of Zn{sub 2}ZrF{sub 8}.12H{sub 2}O. Phase transformations in the process of thermal dehydration were studied on the basis of changes in vibrational and NMR spectra. It has been established that the interligand exchange in the complex anion takes place as early as at -103 C, whereas no reorientation of hexaaquacations was observed up to 47 C. At 58 C, the compound undergoes an incongruent melting accompanied with formation of much more stable ZnZrF{sub 6}.6H{sub 2}O and an aqueous salty liquid phase characterized with high mobility of fluorine atoms and protons, in accordance with the NMR spectroscopic data. (Copyright copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. The influences of Al content on the microstructure and mechanical properties of as-cast Mg-6Zn magnesium alloys

    International Nuclear Information System (INIS)

    Zhang, Yu; Huang, Xiaofeng; Ma, Zhenduo; Li, Ya; Guo, Feng; Yang, Jianchang; Ma, Ying; Hao, Yuan

    2017-01-01

    Mg-6Zn magnesium alloys microalloyed with varying Al content (0, 1, 3, 5 and 7 wt%) were prepared by permanent mould casting. The effects of Al on the microstructure and mechanical properties of as-cast Mg-6Zn alloy were characterized with an optical microscope (OM), a scanning electron microscope (SEM) equipped with energy dispersive spectroscope (EDS), an X-ray diffractometer (XRD) and mechanical tests at room temperature, respectively. The experimental results indicate that the grain sizes do not decline obviously while the amount of eutectic phase and the secondary dendrite arm spacing (SDAS) of the alloys gradually increase when the Al content exceeds 3%. The main phases α-Mg, MgZn 2 , Mg 2 Zn 3 , Mg 7 Zn 3 , MgZn, Mg 32 (Al, Zn) 49 and Mg 17 Al 12 are found in these alloys. A higher addition of Al (≥5 wt%) causes the formation of the Mg 17 Al 12 , meanwhile, the partial morphology of some eutectic phases is modified into lamellar formation, which has an adverse effect on mechanical properties of the Al-containing alloys. The mechanical testing reveals that, the tensile properties are gradually improved within the range of 0 ~ 3%Al, and the maximum values of ultimate tensile strength (UTS, 214 MPa) and elongation (EL, 8.7%) are simultaneously obtained from the alloy with 3% Al, which increases by 21 MPa and 16.0% compared with that of the ZA60 alloy, respectively. Fracture analysis demonstrates that quasi-cleavage fracture, inter-granular and trans-granular fracture are dominant modes in the alloy with additions of 0, 1, 3 wt% Al. In contrast, the rupture mechanisms of the other investigated alloys belong to cleavage and inter-granular fracture modes.

  11. The influences of Al content on the microstructure and mechanical properties of as-cast Mg-6Zn magnesium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yu; Huang, Xiaofeng, E-mail: huangxf_lut@163.com; Ma, Zhenduo; Li, Ya; Guo, Feng; Yang, Jianchang; Ma, Ying; Hao, Yuan

    2017-02-16

    Mg-6Zn magnesium alloys microalloyed with varying Al content (0, 1, 3, 5 and 7 wt%) were prepared by permanent mould casting. The effects of Al on the microstructure and mechanical properties of as-cast Mg-6Zn alloy were characterized with an optical microscope (OM), a scanning electron microscope (SEM) equipped with energy dispersive spectroscope (EDS), an X-ray diffractometer (XRD) and mechanical tests at room temperature, respectively. The experimental results indicate that the grain sizes do not decline obviously while the amount of eutectic phase and the secondary dendrite arm spacing (SDAS) of the alloys gradually increase when the Al content exceeds 3%. The main phases α-Mg, MgZn{sub 2}, Mg{sub 2}Zn{sub 3}, Mg{sub 7}Zn{sub 3}, MgZn, Mg{sub 32}(Al, Zn){sub 49} and Mg{sub 17}Al{sub 12} are found in these alloys. A higher addition of Al (≥5 wt%) causes the formation of the Mg{sub 17}Al{sub 12}, meanwhile, the partial morphology of some eutectic phases is modified into lamellar formation, which has an adverse effect on mechanical properties of the Al-containing alloys. The mechanical testing reveals that, the tensile properties are gradually improved within the range of 0 ~ 3%Al, and the maximum values of ultimate tensile strength (UTS, 214 MPa) and elongation (EL, 8.7%) are simultaneously obtained from the alloy with 3% Al, which increases by 21 MPa and 16.0% compared with that of the ZA60 alloy, respectively. Fracture analysis demonstrates that quasi-cleavage fracture, inter-granular and trans-granular fracture are dominant modes in the alloy with additions of 0, 1, 3 wt% Al. In contrast, the rupture mechanisms of the other investigated alloys belong to cleavage and inter-granular fracture modes.

  12. Commensurate-commensurate magnetic phase transitions in CeSb

    DEFF Research Database (Denmark)

    Lebech, Bente; Broholm, C.; Clausen, K.

    1986-01-01

    The q=2/3 to q=4/7 commensurate-commensurate phase transition in CeSb has been studied by neutron diffraction. On cooling the commensurate wave vector q changes abruptly from 2/3 to a higher-order commensurate value (≈14/23) at T1

  13. Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography

    International Nuclear Information System (INIS)

    Li, Hao; Geng, Yongyou; Wu, Yiqun

    2012-01-01

    In the current work, the etching selectivity of the AgInSbTe phase-change film in laser thermal lithography is reported for the first time. Film phase change induced by laser irradiation and etching selectivity to crystalline and amorphous states in different etchants, including hydrochloric acid, sulfuric acid, phosphoric acid, nitric acid, sodium hydroxide, sodium sulfide, ammonium sulfide and ammonium hydroxide, are investigated. The results indicated that ammonium sulfide solvent (2.5 mol/L) had excellent etching selectivity to crystalline and amorphous states of the AgInSbTe film, and the etching characteristics were strongly influenced by the laser power density and laser irradiation time. The etching rate of the crystalline state of the AgInSbTe film was 40.4 nm/min, 20 times higher than that of the amorphous state under optimized irradiation conditions (power density: 6.63 mW/μm 2 and irradiation time: 330 ns), with ammonium sulfide solvent (2.5 mol/L) as etchant. The step profile produced in the selective etching was clear, and smooth surfaces remained both on the step-up and step-down with a roughness of less than 4 nm (10 x 10 μm). The excellent performance of the AgInSbTe phase-change film in selective etching is significant for fabrication of nanostructures with super-resolution in laser thermal lithography. (orig.)

  14. Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

    2015-01-01

    Here, we report on the electrical characterization of phase change memory cells containing a Ge 3 Sb 2 Te 6 (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles

  15. CTC Sentinel. Volume 6, Issue 11-12, November 2013

    Science.gov (United States)

    2013-11-01

    Libyan government today seeks only to strengthen its existence and power through presenting loyalty to these belligerent countries and offering...opened fire at customs police in Port Said near the Suez Canal, killing one person. – Bloomberg October 8 October 8, 2013 (IRAQ): A car bomb exploded...in front of a restaurant in the mainly Shi`a neighborhood of Zafaraniyya, killing three people. – AP, October 8 NOvEMBER 2013 . VoL 6. IssUE 11-12

  16. The Cu-Te-Sb phase system at temperatures between 300 and 1000 degree C

    DEFF Research Database (Denmark)

    Karup-Møller, Sven

    1997-01-01

    Phase relations were determined in the Cu-Te-Sb phase system at 300, 350, 400, 500, 600, 700, 800, 900 and 1000 degree C. At temperatures between 400 and 900 degree C a cubic primitive ternary phase A exists. It has the empirical formula Cu(10.32-0.97x)Te(x)Sb(4-x) (Z=2, a=7.682 Å). A small liquid...

  17. Phase structure of 3D Z(N) lattice gauge theories at finite temperature: Large-N and continuum limits

    International Nuclear Information System (INIS)

    Borisenko, O.; Chelnokov, V.; Gravina, M.; Papa, A.

    2014-01-01

    We study numerically three-dimensional Z(N) lattice gauge theories at finite temperature, for N=5,6,8,12,13 and 20 on lattices with temporal extension N t =2,4,8. For each model, we locate phase transition points and determine critical indices. We propose also the scaling of critical points with N. The data obtained enable us to verify the scaling near the continuum limit for the Z(N) models at finite temperatures

  18. Extraction chromatography of Am (III), Eu (III), Zn (II), and Cs (I), Using chromo sorb impregnated by 0..01 m 2-heptyl-2-methyl-nonanoic acid in benzene. Vol. 3

    Energy Technology Data Exchange (ETDEWEB)

    El-naggar, H A; Ramadan, A; Abdel-Fattah, A [Nuclear chemistry Department, Hot laboratories Center, Atomic Energy Authority, Cairo (Egypt)

    1996-03-01

    Extraction chromatography studies were carried out for Am(III), Eu(III), Zn(II), and Cs(I) using long carboxylic acid, 2-heptyl-2-methyl nonanoic acid in benzene as an extractant chromo sorb. This was selected to act as a solid support and it was impregnated with the extractant to obtain the stationary phase. The eluting agent used was 0.1 m H N O{sub 3}. The investigation included primarily the extraction chromatography of the individual elements concerned and their elution peaks which were plotted. Group separation of the four elements into two pairs was obtained Am-Eu, and Zn-Cs. A mixture of the four elements was loaded on the column to achieve practically such promising group separations. 5 figs.

  19. Extraction chromatography of Am (III), Eu (III), Zn (II), and Cs (I), Using chromo sorb impregnated by 0..01 m 2-heptyl-2-methyl-nonanoic acid in benzene. Vol. 3

    International Nuclear Information System (INIS)

    El-naggar, H.A.; Ramadan, A.; Abdel-Fattah, A.

    1996-01-01

    Extraction chromatography studies were carried out for Am(III), Eu(III), Zn(II), and Cs(I) using long carboxylic acid, 2-heptyl-2-methyl nonanoic acid in benzene as an extractant chromo sorb. This was selected to act as a solid support and it was impregnated with the extractant to obtain the stationary phase. The eluting agent used was 0.1 m H N O 3 . The investigation included primarily the extraction chromatography of the individual elements concerned and their elution peaks which were plotted. Group separation of the four elements into two pairs was obtained Am-Eu, and Zn-Cs. A mixture of the four elements was loaded on the column to achieve practically such promising group separations. 5 figs

  20. Investigation of intrinsic and extrinsic defects effective role on producing intense red emission in ZnO:Eu nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Najafi, Mehrdad, E-mail: najafi@shahroodut.ac.ir; Haratizadeh, Hamid

    2015-05-15

    Highlights: • Effective role of defects on producing red emission at indirect excitation. • V{sub Zn} and V{sub O} defects have important role on energy transfer. • Mg related defects and Zn{sub i} defects were responsible for blue emission. • Extrinsic and intrinsic defects mediated energy transfer to sensitize Eu{sup 3+} ions. • Decrease of red emission because of diminishing in oxygen vacancy. - Abstract: Europium doped ZnO nanorads and nanosheets were synthesized by hydrothermal method. Effects of Mg doping, morphology and annealing in oxygen ambient on structural and optical properties of ZnO nanostructures were investigated using X-ray diffraction (XRD), particle size analysis (PSA), thermo gravimetric analysis (TGA), differential thermal analysis (DTA), differential thermo gravimetry (DTG), scanning electron microscopy (SEM) and photoluminescence spectroscopy (PL). This study recommends that both of intrinsic and extrinsic defects facilitate energy transfer (ET) from the ZnO host to Eu{sup 3+} ions and consequently have efficient role on producing intense red emission at indirect excitation. The results also showed that annealing process improved the crystal structure of ZnO nanosheets due to decrease of surface defects; however decreased ET and red emission because of diminishing in oxygen vacancy. In addition in ZnO nanorods sample with more surface area in comparison with ZnO nanosheets sample deep level emissions are enhanced.

  1. Isothermal sections of Eu(Ca, Zr, Ba)-Mn-Al ternary phase diagrams at 770 K

    International Nuclear Information System (INIS)

    Manyako, N.B.; Yanson, T.I.; Zarechnyuk, O.S.

    1988-01-01

    Isothermal cross sections of Eu(Ca, Sr, Ba)-Mn-Al state diagrams at 770 K are plotted by means of X-ray structural analysis. EuMn 2.3-3.6 Al 9.7-8.4 (ThMn 12 structure type) and Eu 2 Mn 5 Al 12 (eigenstructure type) two compound are found within Eu-Mn-Al system. Existance of CaMn 0.16- 0 .32 Al 1.84-1.68 compound (MgNi 2 structure type) is proved and CaMn 3.2-2.1 Al 8.8-9.9 compound (ThMn 12 type partially ordered structure) is found within Ca-Mn-Al system. Ternary compounds are not formed within Sr(Ba)-Mn-Al systems. Regions of stratification, occurring within Eu(Ca, Sr, Ba)-Mn systems, penetrate in ternary system

  2. Sensitivity of Mesoporous CoSb2O6 Nanoparticles to Gaseous CO and C3H8 at Low Temperatures

    Directory of Open Access Journals (Sweden)

    Héctor Guillén-Bonilla

    2015-01-01

    Full Text Available Mesoporous CoSb2O6 nanoparticles, synthesized through a nonaqueous method (using cobalt nitrate, antimony trichloride, ethylenediamine, and ethanol as a solvent, were tested to establish their sensitivity to CO and C3H8 atmospheres at relatively low temperatures. The precursor material was dried at 200°C and calcined at 600°C. X-ray diffraction and scanning electron microscopy were employed to verify the existence of crystal phases (P42/mnm and the morphology of this trirutile-type CoSb2O6 oxide. Pyramidal and cubic shaped crystals (average size: 41.1 nm, embedded in the material’s surface, were identified. Mesopores (average size: 6.5 nm on the nanoparticles’ surface were observed by means of transmission electron microscopy. The best sensitivity of the CoSb2O6 in a CO atmosphere was at the relatively low temperatures of 250 and 350°C, whereas, in a C3H8 atmosphere, the sensitivity increased uniformly with temperature. These results encourage using the CoSb2O6 nanoparticles as gas sensors.

  3. Solvent extraction of Cs(I), Zn(II), Eu(III) and Am(III) by 2-heptyl-2-methyl-nonanoic acid (Ha) from nitrate solutions

    International Nuclear Information System (INIS)

    Ramadan, A.; Elnaggar, H.A.; Souka, N.; Abdelfattah, A.

    1994-01-01

    The present work is devoted to study the extraction behavior of caesium, zinc, europium and americium radioactive isotopes using a new extractant C H 3 (C H 2 ) 6 . C(C 7 H 1 5) (C H 3 ). COOH (Ha) dissolved in benzene from aqueous nitrate media of constant ionic strength (0.1 M) using HNO 3 -Na NO 3 mixtures. The effect temperature on the extraction of these elements was also investigated to evaluate the thermodynamic functions as well as the equilibrium constant of each reaction. The extraction mechanisms were postulated on the light of the available data and the extracted species were formulated in the proposed stoichiometric equation for the extraction of each element individually and these species were suggested to be Cs (A); Zn OH(A) and Zn(A) 2 ; Eu No 3 (A) 2 and Am(A) 3 and for Cs(I), Zn(II), Eu(III) and Am(III), respectively. The thermodynamic parameters show exothermic enthalpy for all the reactions and negative entropy values reflecting very good ordering extraction mechanisms. 10 figs, 1 tab

  4. Coexistence of charge order and antiferromagnetism in (TMTTF){sub 2}SbF{sub 6}: NMR study

    Energy Technology Data Exchange (ETDEWEB)

    Nomura, K., E-mail: knmr@phys.sci.hokudai.ac.jp; Yamamoto, M.; Matsunaga, N.; Hirose, S.; Shimohara, N.; Satoh, T.; Isome, T.; Liu, Y.; Kawamoto, A.

    2015-03-01

    The electronic state of (TMTTF){sub 2}SbF{sub 6} was investigated by the {sup 1}H and {sup 13}C NMR measurements. The temperature dependence of T{sub 1}{sup −1} in {sup 1}H NMR shows a sharp peak associated with the antiferromagnetic transition at T{sub AF}=6 K. The temperature dependence of T{sub 1}{sup −1} is described by the power law T{sup 2.4} below T{sub AF}. This suggests the nodal gapless spin wave excitation in antiferromagnetic phase. In {sup 13}C NMR, two sharp peaks at high temperature region, associated with the inner and the outer carbon sites in TMTTF dimer, split into four peaks below 150 K. It indicates that the charge disproportionation occurs. The degree of charge disproportionation Δρ is estimated as (0.25±0.09)e from the chemical shift difference. This value of Δρ is consistent with that obtained from the infrared spectroscopy. In the antiferromagnetic state (AFI), the observed line shape is well fitted by eight Lorentzian peaks. This suggests that the charge order with the same degree still remains in the AF state. From the line assignment, the AF staggered spin amplitude is obtained as 0.70 μ{sub B} and 0.24 μ{sub B} at the charge rich and the poor sites, respectively. These values corresponding to almost 1 μ{sub B} per dimer are quite different from 0.11 μ{sub B} of another AF (AFII) state in (TMTTF){sub 2}Br with effective higher pressure. As a result, it is understood that the antiferromagnetic staggered spin order is stabilized on the CO state in the AFI phase of (TMTTF){sub 2}SbF{sub 6}.

  5. Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

    Science.gov (United States)

    Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, J. P.; Briones, F.

    2001-05-01

    Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusion are mediated by Ga vacancies and Sb interstitials, respectively, and not by the formation of a triple defect proposed earlier by Weiler and Mehrer [Philos. Mag. A 49, 309 (1984)]. The extremely slow diffusion of Sb up to the melting temperature of GaSb is proposed to be a consequence of amphoteric transformations between native point defects which suppress the formation of those native defects which control Sb diffusion. Preliminary experiments exploring the effect of Zn indiffusion at 550 °C on Ga and Sb diffusion reveal an enhanced intermixing of the Ga isotope layers compared to undoped GaSb. However, under the same conditions the diffusion of Sb was not significantly affected.

  6. Simultaneous thermal stability and phase change speed improvement of Sn15Sb85 thin film through erbium doping

    Science.gov (United States)

    Zou, Hua; Zhu, Xiaoqin; Hu, Yifeng; Sui, Yongxing; Sun, Yuemei; Zhang, Jianhao; Zheng, Long; Song, Zhitang

    2016-12-01

    In general, there is a trade off between the phase change speed and thermal stability in chalcogenide phase change materials, which leads to sacrifice the one in order to ensure the other. For improving the performance, doping is a widely applied technological process. Here, we fabricated Er doped Sn15Sb85 thin films by magnetron sputtering. Compared with the pure Sn15Sb85, we show that Er doped Sn15Sb85 thin films exhibit simultaneous improvement over the thermal stability and the phase change speed. Thus, our results suggest that Er doping provides the opportunity to solve the contradiction. The main reason for improvement of both thermal stability and crystallization speed is due to the existence of Er-Sb and Er-Sn bonds in Er doped Sn15Sb85 films. Hence, Er doped Sn15Sb85 thin films are promising candidates for the phase change memory application, and this method could be extended to other lanthanide-doped phase change materials.

  7. Use of reversed-phase gel partition chromatography for the purification of chemically synthesized (5,6,8,9,11,12,14,15(n)) octadeuterium- and octatritium-labelled arachidonic acid

    Energy Technology Data Exchange (ETDEWEB)

    Wollard, P M; Lascelles, P T [Department of Chemical Pathology, Institute of Neurology, London, Great Britain; Hensby, C N [Hammersmith Hospital, London (UK). Postgraduate Medical School

    1978-12-11

    The development of a method is described for the preparation and purification of (5,6,8,9,11,12,14,15(n)-/sup 2/H)arachidonic acid (/sup 2/H/sub 8/-AA). The /sup 2/H/sub 8/-AA was chemically synthesised by the selective reduction of 5,8,11,14-eiconsatetraynoic acid (ETYA) with deuterium gas. Using reversed-phase partition chromatography on a Lipidex 5000 column support, it was shown that: (1) The reaction products could readily be separated from each other to yield /sup 2/H/sub 8/-AA of greater than 98% mass purity by gas chromatography. (2) Closely related C20 cis-ethylenic fatty acids differing only in the degree of unsaturation are efficiently separated. The resolution increases exponentially on saturation of double bonds. (3) Commercially available (5,6,8,9,11,12,14,15(n))octatritium-labelled arachidonic acid (/sup 3/H/sub 8/-AA) was readily purified. Both (/sup 3/H/sub 8/)- and (1-/sup 14/C)arachidonic acid (/sup 14/C-AA) co-chromatographed with /sup 2/H/sub 8/-AA. (4) The mass spectra of the methyl ester and trimethylsilyl ester of the purified /sup 2/H/sub 8/-AA showed molecular ions at m/e 326 and 384, respectively.

  8. First-Order Transitions and the Magnetic Phase Diagram of CeSb

    DEFF Research Database (Denmark)

    Lebech, Bente; Clausen, Kurt Nørgaard; Vogt, O.

    1980-01-01

    might exist in the magnetic phase diagram of CeSb at 16K for a field of approximately 0.3 T. The present study concludes that the transitions from the paramagnetic to the magnetically ordered states are of first order for fields below 0.8 T. Within the experimental accuracy no change has been observed......The high-temperature (14-17K) low-magnetic field (0-0.8 T) region of the phase diagram of the anomalous antiferromagnet CeSb has been reinvestigated by neutron diffraction in an attempt to locate a possible tricritical point. Previous neutron diffraction studies indicated that a tricritical point...

  9. Enhanced photoluminescence and thermal stability of divalent ions (Zn2+, Mg2+) assisted CaTiO3:Eu3+ perovskite phosphors for lighting applications

    Science.gov (United States)

    Singh, Dhananjay Kumar; Manam, J.

    2018-03-01

    Current study proposes the improved red emission of Zn2+ and Mg2+ ions incorporated CaTiO3:Eu3+ phosphors synthesized via the well-known solid-state reaction method. Under the 397 nm UV excitation, the Zn2+- and Mg2+-incorporated CaTiO3:0.15Eu3+ phosphor having orthorhombic structure with space group Pbnm exhibited an intense red emission at 619 nm. This can be credited to the hypersensitive 5D0 → 7F2 transition of Eu3+ ions, which is also indicative of the fact that the Eu3+ ions populated the non-inversion symmetry sites in the CaTiO3 lattices. The optimized composition CaTiO3:0.15Eu3+, 0.20Zn2+ and CaTiO3:0.15Eu3+, 0.10Mg2+ phosphors, pronounces in a magnificent enhancement of PL intensity by 5.5 and 2.5 times, respectively, as compared to CaTiO3:0.15 Eu3+ phosphor. From the temperature-dependent emission spectra, ΔEa were enunciated to be 0.101 and 0.086 eV for CaTiO3:0.15Eu3+, 0.20Zn2+ and CaTiO3:0.15Eu3+, 0.10Mg2+ phosphors, respectively, for thermal quenching. In addition, it can be better understood as related to the adequate thermal stability of 60% even at 450 and 420 K, respectively. Furthermore, the Judd-Ofelt theory was used to study the radiative intensity parameters of Eu3+ ions in the CaTiO3 lattices. The experimental results incited the bright prospects of synthesized ceramics as a promising candidate for lighting applications.

  10. Two ternary mixed-anion chlorides with divalent europium: Eu{sub 2}H{sub 3}Cl and Eu{sub 7}F{sub 12}Cl{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Reckeweg, Olaf [Baker Laboratory, Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY 14853-1301 (United States); Institut fuer Anorganische Chemie, Universitaet Stuttgart, Pfaffenwaldring 55, 70569 Stuttgart (Germany); DiSalvo, Francis J. [Baker Laboratory, Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY 14853-1301 (United States); Wolf, Sarah; Schleid, Thomas [Institut fuer Anorganische Chemie, Universitaet Stuttgart, Pfaffenwaldring 55, 70569 Stuttgart (Germany)

    2014-06-15

    Dark ruby-red, transparent, triangular plate-shaped single crystals of Eu{sub 2}H{sub 3}Cl and colorless, transparent, needle-shaped single crystals of Eu{sub 7}F{sub 12}Cl{sub 2} were obtained by solid-state reactions of Eu, NaH, NaCl, and Na (2:4:1:2 molar ratio) or Eu, EuCl{sub 3}, and LiF (1:1:4 molar ratio), respectively, in silica-jacketed tantalum ampoules at 900 C for 13 h. Eu{sub 2}H{sub 3}Cl crystallizes isotypically to Ba{sub 2}H{sub 3}X (X = Cl, Br, I) in the trigonal space group P anti 3m1 (no. 164) with lattice parameters a = 409.67(4) and c = 696.18(7) pm, whereas Eu{sub 7}F{sub 12}Cl{sub 2} crystallizes isotypically to Ba{sub 7}F{sub 12}Cl{sub 2} or Sr{sub 7}H{sub 12}Cl{sub 2} in the hexagonal space group P anti 6 (no. 174) with lattice parameters a = 1002.31(5) and c = 392.54(2) pm. Both compounds contain Eu{sup 2+} cations with coordination numbers as high as nine (Eu{sub 7}F{sub 12}Cl{sub 2}) and ten (Eu{sub 2}H{sub 3}Cl) with respect to the halide anions (F{sup -} or H{sup -} and Cl{sup -}). The structural results are corroborated by EUTAX and MAPLE calculations on both ternary mixed-anion europium(II) chlorides in comparison to these for related binary and ternary compounds with divalent europium. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. New pathway for the formation of metallic cubic phase Ge-Sb-Te compounds induced by an electric current.

    Science.gov (United States)

    Park, Yong-Jin; Cho, Ju-Young; Jeong, Min-Woo; Na, Sekwon; Joo, Young-Chang

    2016-02-23

    The novel discovery of a current-induced transition from insulator to metal in the crystalline phase of Ge2Sb2Te5 and GeSb4Te7 have been studied by means of a model using line-patterned samples. The resistivity of cubic phase Ge-Sb-Te compound was reduced by an electrical current (~1 MA/cm(2)), and the final resistivity was determined based on the stress current density, regardless of the initial resistivity and temperature, which indicates that the conductivity of Ge-Sb-Te compound can be modulated by an electrical current. The minimum resistivity of Ge-Sb-Te materials can be achieved at high kinetic rates by applying an electrical current, and the material properties change from insulating to metallic behavior without a phase transition. The current-induced metal transition is more effective in GeSb4Te7 than Ge2Sb2Te5, which depends on the intrinsic vacancy of materials. Electromigration, which is the migration of atoms induced by a momentum transfer from charge carriers, can easily promote the rearrangement of vacancies in the cubic phase of Ge-Sb-Te compound. This behavior differs significantly from thermal annealing, which accompanies a phase transition to the hexagonal phase. This result suggests a new pathway for modulating the electrical conductivity and material properties of chalcogenide materials by applying an electrical current.

  12. Phase structure of 3D Z(N) lattice gauge theories at finite temperature: Large-N and continuum limits

    Energy Technology Data Exchange (ETDEWEB)

    Borisenko, O., E-mail: oleg@bitp.kiev.ua [Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine, 03680 Kiev (Ukraine); Chelnokov, V., E-mail: chelnokov@bitp.kiev.ua [Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine, 03680 Kiev (Ukraine); Gravina, M., E-mail: gravina@fis.unical.it [Dipartimento di Fisica, Università della Calabria, and Istituto Nazionale di Fisica Nucleare, Gruppo Collegato di Cosenza, I-87036 Arcavacata di Rende, Cosenza (Italy); Papa, A., E-mail: papa@fis.unical.it [Dipartimento di Fisica, Università della Calabria, and Istituto Nazionale di Fisica Nucleare, Gruppo Collegato di Cosenza, I-87036 Arcavacata di Rende, Cosenza (Italy)

    2014-11-15

    We study numerically three-dimensional Z(N) lattice gauge theories at finite temperature, for N=5,6,8,12,13 and 20 on lattices with temporal extension N{sub t}=2,4,8. For each model, we locate phase transition points and determine critical indices. We propose also the scaling of critical points with N. The data obtained enable us to verify the scaling near the continuum limit for the Z(N) models at finite temperatures.

  13. Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge2Sb2Te5 and AgInSbTe

    International Nuclear Information System (INIS)

    Lee, Bong-Sub; Bogle, Stephanie N.; Darmawikarta, Kristof; Abelson, John R.; Shelby, Robert M.; Retter, Charles T.; Burr, Geoffrey W.; Raoux, Simone; Bishop, Stephen G.

    2014-01-01

    Phase change memory devices are based on the rapid and reversible amorphous-to-crystalline transformations of phase change materials, such as Ge 2 Sb 2 Te 5 and AgInSbTe. Since the maximum switching speed of these devices is typically limited by crystallization speed, understanding the crystallization process is of crucial importance. While Ge 2 Sb 2 Te 5 and AgInSbTe show very different crystallization mechanisms from their melt-quenched states, the nanostructural origin of this difference has not been clearly demonstrated. Here, we show that an amorphous state includes different sizes and number of nanoscale nuclei, after thermal treatment such as melt-quenching or furnace annealing is performed. We employ fluctuation transmission electron microscopy to detect nanoscale nuclei embedded in amorphous materials, and use a pump-probe laser technique and atomic force microscopy to study the kinetics of nucleation and growth. We confirm that melt-quenched amorphous Ge 2 Sb 2 Te 5 includes considerably larger and more quenched-in nuclei than its as-deposited state, while melt-quenched AgInSbTe does not, and explain this contrast by the different ratio between quenching time and nucleation time in these materials. In addition to providing insights to the crystallization process in these technologically important devices, this study presents experimental illustrations of temperature-dependence of nucleation rate and growth speed, which was predicted by theory of phase transformation but rarely demonstrated

  14. Pressure effect on the Raman and photoluminescence spectra of Eu3+-doped Na2Ti6O13 nanorods

    Science.gov (United States)

    Zeng, Q. G.; Yang, G. T.; Chen, F.; Luo, J. Y.; Zhang, Z. M.; Leung, C. W.; Ding, Z. J.; Sheng, Y. Q.

    2013-12-01

    Eu3+-doped Na2Ti6O13 (Na2Ti6O13:Eu) nanorods with diameters of 30 nm and lengths 400 nm were synthesized by hydrothermal and heat treatment methods. Raman spectra at ambient conditions indicated a pure monoclinic phase (space group C2/m) of the nanorods. The relations between structural and optical properties of Na2Ti6O13:Eu nanorods under high pressures were obtained by photoluminescence and Raman spectra. Two structural transition points at 1.39 and 15.48 GPa were observed when the samples were pressurized. The first transition point was attributed to the crystalline structural distortion. The later transition point was the result of pressure-induced amorphization, and the high-density amorphous (HDA) phase formed after 15.48 GPa was structurally related to the monoclinic baddeleyite structured TiO2 (P21/c). However, the site symmetry of the local environment around the Eu3+ ions in Na2Ti6O13 increased with the rising pressure. These above results indicate the occurrence of short-range order for the local asymmetry around the Eu3+ ions and long-range disorder for the crystalline structure of Na2Ti6O13:Eu nanorods by applying pressure. After releasing the pressure from 22.74 GPa, the HDA phase is transformed to low-density amorphous form, which is attributed to be structurally related to the α-PbO2-type TiO2.

  15. AgLnSb/sub 2/O/sub 7/ compounds with weberite structure

    Energy Technology Data Exchange (ETDEWEB)

    Lopatin, S S; Aver' yanova, L N; Belyaev, I N; Zvyagintsev, B I; Dyatlov, Eh V [Rostovskij-na-Donu Gosudarstvennyj Univ. (USSR)

    1982-11-01

    The interaction between AgSbO/sub 3/ and LnSbO/sub 4/ in the solid phase at 1100-1150 deg C has been investigated. AgLnSb/sub 2/O/sub 7/ compounds with weberite crystal structure are formed in Ln=La, Pr, Nd, Sm cases but in Ln=Eu, Cd, Dy, Er cases the formation of termary oxides of the indicated composition has not been observed. Inasmuch as compounds of the general formula A/sub 2/B/sub 2/O/sub 7/ with average cation radii Rsub(B) >0.60 A and 1.65 <= Rsub(A)/Rsub(B) <= 2.20 can crystallize in weberite, pyrochlore and laminated perovskite-like structurer, conditions of the existence of the above mentioned structures depending on A and B dimensions and electronegativity are discussed.

  16. Phase transformations in ion-mixed metastable (GaSb)1/sub 1 -x/(Ge2)/sub x/ semiconducting alloys

    International Nuclear Information System (INIS)

    Cadien, K.C.; Muddle, B.C.; Greene, J.E.

    1984-01-01

    Low energy (75--175 eV) Ar + ion bombardment during film deposition has been used to produce well-mixed amorphous GaSb/Ge mixtures which, when annealed, transform first to single phase polycrystalline metastable (GaSb)/sub 1-x/(Ge 2 )/sub x/ alloys before eventually transforming to the equilibrium two-phase state. At 500 0 C, for example, the annealing time t/sub a/ required for the amorphous to crystalline metastable (ACM) transformation was approx.10 min, while t/sub a/ for the crystalline metastable to equilibrium (CME) transformation was >6 h. The exothermic enthalpy of crystallization and the onset temperature of the ACM transition were determined as a function of alloy composition using differential thermal analysis. The thermodynamic data was then used to calculate the surface energy per unit area sigma of the amorphous/metastable-crystal interface. sigma was found to exhibit a minimum between x = 0.3 and 0.4. The driving energy for the transition from the crystalline metastable state to the equilibrium two-phase state was of the order of 0.12 kJ cm -3 while the activation barrier was approx.19 kJ cm -3 . Thus, the metastable alloys, which had average grain sizes of 100--200 nm and a lattice constant which varied linearly with x, exhibited good thermal and temporal stability

  17. Large negative magnetoresistance of a nearly Dirac material: Layered antimonide EuMnS b2

    Science.gov (United States)

    Yi, Changjiang; Yang, Shuai; Yang, Meng; Wang, Le; Matsushita, Yoshitaka; Miao, Shanshan; Jiao, Yuanyuan; Cheng, Jinguang; Li, Yongqing; Yamaura, Kazunari; Shi, Youguo; Luo, Jianlin

    2017-11-01

    Single crystals of EuMnS b2 were successfully grown and their structural and electronic properties were investigated systematically. The material crystallizes in an orthorhombic-layered structure (space group: Pnma, No. 62) comprising a periodic sequence of -MnSb/Eu/Sb/Eu/- layers (˜1 nm in thickness), and massless fermions are expected to emerge in the Sb layer, by analogy of the candidate Dirac materials EuMnB i2 and A Mn P n2 (A =Ca or Sr or Ba, P n =Sb or Bi). The magnetic and specific heat measurements of EuMnS b2 suggest an antiferromagnetic ordering of Eu moments near 20 K. A characteristic hump appears in the temperature-dependent electrical resistivity curve at ˜25 K . A spin-flop transition of Eu moments with an onset magnetic field of ˜15 kOe (at 2 K) was observed. Interestingly, EuMnS b2 shows a negative magnetoresistance (up to -95 % ) in contrast to the positive magnetoresistances observed for EuMnB i2 and A Mn P n2 (A =Ca or Sr or Ba, P n =Sb or Bi), providing a unique opportunity to study the correlation between electronic and magnetic properties in this class of materials.

  18. Mechanical properties and fracture mechanism of as-cast Mg{sub 77}TM{sub 12}Zn{sub 5}Y{sub 6} (TM = Cu, Ni) bulk amorphous matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, K.Q. [School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110178 (China)], E-mail: kqqiu@yahoo.com.cn; Hu, N.N.; Zhang, H.B. [School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110178 (China); Jiang, W.H. [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37990 (United States); Ren, Y.L. [School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110178 (China); Liaw, P.K. [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37990 (United States)

    2009-06-10

    Comparative investigations on the microstructures, thermal stability and mechanical properties of Mg{sub 77}Cu{sub 12}Zn{sub 5}Y{sub 6} and Mg{sub 77}Ni{sub 12}Zn{sub 5}Y{sub 6} bulk metallic glass matrix composites were carried out by using scanning electron microscopy (SEM), DSC and compressive tester. The results show that the microstructure of as-cast samples with 3 mm in diameter for Cu-containing alloy is consisted of Mg flakes and dotted Mg{sub 2}Cu phase in the amorphous matrix, while the as-cast Ni-containing alloy with the same diameter is mainly consisted of Mg flakes in the amorphous matrix. The glass transition temperature and supercooled liquid region are 413 K and 27 K for the Cu-containing, 443 K and 32 K for the Ni-containing amorphous matrix composites, respectively. The fracture strength, yield strength and plastic strain are 532 MPa, 390 MPa and 2.4% for the Cu-containing alloy, 667 MPa, 412 MPa and 7% for the Ni-containing alloy, respectively. Furthermore, the fracture mechanism for the amorphous matrix composites was discussed according to both the fracture surfaces and the stress-strain curves.

  19. Polar Kerr Effect from Time-Reversal Symmetry Breaking in the Heavy-Fermion Superconductor PrOs4Sb12

    Science.gov (United States)

    Levenson-Falk, E. M.; Schemm, E. R.; Aoki, Y.; Maple, M. B.; Kapitulnik, A.

    2018-05-01

    We present polar Kerr effect measurements of the filled skutterudite superconductor PrOs4 Sb12 . Simultaneous ac susceptibility measurements allow us to observe the superconducting transition under the influence of heating from the optical beam. A nonzero Kerr angle θK develops below the superconducting transition, saturating at ˜300 nrad at low temperatures. This result is repeated across several measurements of multiple samples. By extrapolating the measured θK(T ) to zero optical power, we are able to show that the Kerr angle onset temperature in one set of measurements is consistent with the transition to the B phase at TC 2. We discuss the possible explanations for this result and its impact on the understanding of multiphase and inhomogeneous superconductivity in PrOs4 Sb12 .

  20. Characterization of Ge Doping on Sb_2Te_3 for High-Speed Phase Change Memory Application

    International Nuclear Information System (INIS)

    Zhu Yue-Qin; Xie Hua-Qing; Zhang Zhong-Hua; Song San-Nian; Song Zhi-Tang; Shen Lan-Lan; Li Le; Wu Liang-Cai; Liu Bo

    2015-01-01

    The phase change material of Ge-doped Sb_2Te_3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb_2Te_3. Ge_0_._1_1Sb_2Te_3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge_2Sb_2Te_5. In addition, Ge_0_._1_1Sb_2Te_3 presents extremely rapid reverse switching speed (10 ns), and up to 10"5 programming cycles are obtained with stable set and reset resistances. (paper)

  1. MoSbTe for high-speed and high-thermal-stability phase-change memory applications

    Science.gov (United States)

    Liu, Wanliang; Wu, Liangcai; Li, Tao; Song, Zhitang; Shi, Jianjun; Zhang, Jing; Feng, Songlin

    2018-04-01

    Mo-doped Sb1.8Te materials and electrical devices were investigated for high-thermal-stability and high-speed phase-change memory applications. The crystallization temperature (t c = 185 °C) and 10-year data retention (t 10-year = 112 °C) were greatly enhanced compared with those of Ge2Sb2Te5 (t c = 150 °C, t 10-year = 85 °C) and pure Sb1.8Te (t c = 166 °C, t 10-year = 74 °C). X-ray diffraction and transmission electron microscopy results show that the Mo dopant suppresses crystallization, reducing the crystalline grain size. Mo2.0(Sb1.8Te)98.0-based devices were fabricated to evaluate the reversible phase transition properties. SET/RESET with a large operation window can be realized using a 10 ns pulse, which is considerably better than that required for Ge2Sb2Te5 (∼50 ns). Furthermore, ∼1 × 106 switching cycles were achieved.

  2. Fast synthesis of the polycrystalline materials on the base of Zn 3 V2 MoO11 and Zn 2.5 VMoO8

    Directory of Open Access Journals (Sweden)

    Maya Markova-Velichkova

    2009-12-01

    Full Text Available In our study we applied two different techniques for the preparation of Zn3V2MoO11 and Zn2.5VMoO8 polycrystalline materials - melt quenching method (up-bottom and mechanochemical synthesis (bottom- up. These compounds belong to the family of materials with general formula M2.5VMoO8 (M=Zn, Mg, Mn, Co. They are potential candidates as catalysts in processes of selective oxidation of hydrocarbons. Until now, these two compounds were obtained by conventional solid state reaction. Using infrared spectroscopy and X-ray diffraction we proved that the melt quenching technique is a quite appropriate method for the synthesis of bulk Zn3V2-MoO11 phase. Mechanochemical activation is more appropriated for the preparation of nonosized Zn2.5VMoO8 powder. It was established that the melt quenching technique and mechanochemical activation are faster in comparison with conventional ceramic methods for the given synthesis.

  3. Bioaccessibility of As, Cd, Cu, Ni, Pb, and Sb in toys and low-cost jewelry.

    Science.gov (United States)

    Guney, Mert; Zagury, Gerald J

    2014-01-21

    Children can be exposed to toxic elements in toys and jewelry following ingestion. As, Cd, Cu, Ni, Pb, and Sb bioavailability was assessed (n = 24) via the in vitro gastrointestinal protocol (IVG), the physiologically based extraction test (PBET), and the European Toy Safety Standard protocol (EN 71-3), and health risks were characterized. Cd, Cu, Ni, and Pb were mobilized from 19 metallic toys and jewelry (MJ) and one crayon set. Bioaccessible Cd, Ni, or Pb exceeded EU migratable concentration limits in four to six MJ, depending on the protocol. Using two-phase (gastric + intestinal) IVG or PBET might be preferable over EN 71-3 since they better represent gastrointestinal physiology. Bioaccessible and total metal concentrations were different and not always correlated, indicating that bioaccessibility measurement may provide more accurate risk characterization. More information on impacts of multiple factors affecting metals mobilization from toys and jewelry is needed before recommending specific tests. Hazard index (HI) for Cd, Ni, or Pb were >1 for all six MJ exceeding the EU limits. For infants (6-12 mo old), 10 MJ had HI > 1 for Cd, Cu, Ni, or Pb (up to 75 for Cd and 43 for Pb). Research on prolonged exposure to MJ and comprehensive risk characterization for toys and jewelry exposure is recommended.

  4. Leaching of Antimony (Sb)from Municipal Solid Waste Incineration (MSWI) Residues

    Energy Technology Data Exchange (ETDEWEB)

    Herrmann, Inga

    2004-07-01

    The mobility of antimony (Sb) in municipal solid waste incineration (MSWI) residues often exceeds the limit values stipulated by the European Union. As an ash treatment by washing is conceivable, this work investigated the Sb release from Swedish bottom ash and fly ash when mixed with water. The leaching experiments revealed the factors significantly (a = 0.05) affecting Sb release from the ashes. The following factors were investigated: Liquid to solid ratio (L/S), time, pH, carbonation (treatment with CO{sub 2}), ultrasonics and temperature. The data were evaluated using multiple linear regression (MLR). The impact of the factors could be quantified. The maximum Sb release calculated was 13 mg/kg DM for bottom ash and 51 mg/kg DM for fly ash. The derived models explained the observed data well. Nevertheless, the calculated values were subject to a high uncertainty. For bottom ash, a lowering of the Sb total content of approximately 22% could be achieved. If this also involves a sufficient lowering of the Sb mobility to meet EU limit values could not yet be assessed. Chemical equilibrium calculations were performed to explain the empirical results. However, no solid phases controlling Sb release from the ashes could be identified.

  5. Electric Properties of Pb(Sb1/2Nb1/2)O3 PbTiO3 PbZrO3 Ceramics

    Science.gov (United States)

    Kawamura, Yasushi; Ohuchi, Hiromu

    1994-09-01

    Solid-solution ceramics of ternary system xPb(Sb1/2Nb1/2)O3 yPbTiO3 zPbZrO3 were prepared by the solid-state reaction of powder materials. Ceramic, electric, dielectric and piezoelectric properties and crystal structures of the system were studied. Sintering of the system xPb(Sb1/2Nb1/2)O3 yPbTiO3 zPbZrO3 is much easier than that of each end composition, and well-sintered high-density ceramics were obtained for the compositions near the morphotropic transformation. Piezoelectric ceramics with high relative dielectric constants, high radial coupling coefficient and low resonant resistance were obtained for the composition near the morphotropic transformation. The composition Pb(Sb1/2Nb1/2)0.075Ti0.45Zr0.475O3 showed the highest dielectric constant (ɛr=1690), and the composition Pb(Sb1/2Nb1/2)0.05Ti0.45Zr0.5O3 showed the highest radial coupling coefficient (kp=64%).

  6. Microscopic local bonding and optically-induced switching for Ge{sub 2}Sb{sub 2}Te{sub 5} alloys: A tale of four pseudo-binary and three binary tie-lines in Ge-Sb-Te phase field

    Energy Technology Data Exchange (ETDEWEB)

    Lucovsky, G.; Baker, D.A.; Washington, J.P.; Paesler, M.A. [Department of Physics, North Carolina State University, Raleigh, NC (United States)

    2009-05-15

    Ge{sub 2}Sb{sub 2}Te{sub 5} (GST-225) has emerged as an active medium for applications in reversible, ReWritable (RW) optical memory discs. Many studies have focused on the properties of this alloy, relative to the other GST compositions on tie-lines in the Ge-Sb-Te ternary phase field; (i) Sb{sub 2}Te to GeTe{sub 2}: (ii) Sb{sub 2}Te{sub 3}: to GeTe; (iii) GeSb to Te: and (iv) the truncated tie-line from GST-124 to Sb. This article focuses instead on the binary atomic join-lines, Te-Ge, Ge-Sb and Sb-Te, that comprise the perimeter of the Ge-Sb-Te ternary diagram. Three eutectic compositions, one on each perimeter segment: (i) Ge{sub 12}Sb{sub 88}; (ii) Te{sub 25}Sb{sub 75}; and (iii) Ge{sub 17}Te{sub 83} have been identified. Focussing on the significance of these eutectic compositions, and (i) building on previous publications from our group, and (ii) relying on two recently published articles, a new model for the RW properties of GST-22T has been proposed. Finally comparisons are made between GST and AIST RW films. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Nature of metastable amorphous-to-crystalline reversible phase transformations in GaSb

    Energy Technology Data Exchange (ETDEWEB)

    Kalkan, B. [Advanced Light Source, Lawrence Berkeley Laboratory, Berkeley, California 20015 (United States); Edwards, T. G.; Sen, S. [Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616 (United States); Raoux, S. [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

    2013-08-28

    The structural, thermodynamic, and kinetic aspects of the transformations between the metastable amorphous and crystalline phases of GaSb are investigated as a function of pressure at ambient temperature using synchrotron x-ray diffraction experiments in a diamond anvil cell. The results are consistent with the hypothesis that the pressure induced crystallization of amorphous GaSb into the β-Sn crystal structure near ∼5 GPa is possibly a manifestation of an underlying polyamorphic phase transition between a semiconducting, low density and a metallic, high density amorphous (LDA and HDA, respectively) phases. In this scenario, the large differences in the thermal crystallization kinetics between amorphous GaSb deposited in thin film form by sputtering and that prepared by laser melt quenching may be related to the relative location of the glass transition temperature of the latter in the pressure-temperature (P-T) space with respect to the location of the critical point that terminate the LDA ↔ HDA transition. The amorphous →β-Sn phase transition is found to be hysteretically reversible as the β-Sn phase undergoes decompressive amorphization near ∼2 GPa due to the lattice instabilities that give rise to density fluctuations in the crystal upon decompression.

  8. Nature of metastable amorphous-to-crystalline reversible phase transformations in GaSb

    Science.gov (United States)

    Kalkan, B.; Edwards, T. G.; Raoux, S.; Sen, S.

    2013-08-01

    The structural, thermodynamic, and kinetic aspects of the transformations between the metastable amorphous and crystalline phases of GaSb are investigated as a function of pressure at ambient temperature using synchrotron x-ray diffraction experiments in a diamond anvil cell. The results are consistent with the hypothesis that the pressure induced crystallization of amorphous GaSb into the β-Sn crystal structure near ˜5 GPa is possibly a manifestation of an underlying polyamorphic phase transition between a semiconducting, low density and a metallic, high density amorphous (LDA and HDA, respectively) phases. In this scenario, the large differences in the thermal crystallization kinetics between amorphous GaSb deposited in thin film form by sputtering and that prepared by laser melt quenching may be related to the relative location of the glass transition temperature of the latter in the pressure-temperature (P-T) space with respect to the location of the critical point that terminate the LDA ↔ HDA transition. The amorphous → β-Sn phase transition is found to be hysteretically reversible as the β-Sn phase undergoes decompressive amorphization near ˜2 GPa due to the lattice instabilities that give rise to density fluctuations in the crystal upon decompression.

  9. Nature of metastable amorphous-to-crystalline reversible phase transformations in GaSb

    International Nuclear Information System (INIS)

    Kalkan, B.; Edwards, T. G.; Sen, S.; Raoux, S.

    2013-01-01

    The structural, thermodynamic, and kinetic aspects of the transformations between the metastable amorphous and crystalline phases of GaSb are investigated as a function of pressure at ambient temperature using synchrotron x-ray diffraction experiments in a diamond anvil cell. The results are consistent with the hypothesis that the pressure induced crystallization of amorphous GaSb into the β-Sn crystal structure near ∼5 GPa is possibly a manifestation of an underlying polyamorphic phase transition between a semiconducting, low density and a metallic, high density amorphous (LDA and HDA, respectively) phases. In this scenario, the large differences in the thermal crystallization kinetics between amorphous GaSb deposited in thin film form by sputtering and that prepared by laser melt quenching may be related to the relative location of the glass transition temperature of the latter in the pressure-temperature (P-T) space with respect to the location of the critical point that terminate the LDA ↔ HDA transition. The amorphous →β-Sn phase transition is found to be hysteretically reversible as the β-Sn phase undergoes decompressive amorphization near ∼2 GPa due to the lattice instabilities that give rise to density fluctuations in the crystal upon decompression

  10. In operando study of high-performance thermoelectric materials for power generation: a case study of β-Zn4Sb3

    DEFF Research Database (Denmark)

    Le, Thanh Hung; Ngo, Duc-The; Han, Li

    2017-01-01

    of the thermal conductivity and electrical resistivity, but it is also the failure mechanism for the leg under these conditions. The in operando study brings deep insight into the dynamic behavior of nanostructured TE materials for tailoring future TE materials and devices with higher efficiency and longer......To bring current thermoelectric (TE) materials achievement into a device for power generation, a full understanding of their dynamic behavior under operating conditions is needed. Here, an in operando study is conducted on the high-performance TE material β-Zn4Sb3 under large temperature gradient...... and thermal cycling via a new approach using in situ transmission electron microscopy combined with characterization of the TE properties. It is found that after 30 thermal cycles in a low-pressure helium atmosphere the TE performance of β-Zn4Sb3 is maintained with the figure of merit, zT, value of 1.4 at 718...

  11. Possible quadrupolar nematic phase in the frustrated spin chain LiCuSbO4: An NMR investigation

    Science.gov (United States)

    Bosiočić, M.; Bert, F.; Dutton, S. E.; Cava, R. J.; Baker, P. J.; Požek, M.; Mendels, P.

    2017-12-01

    The frustrated one-dimensional quantum magnet LiCuSbO4 is a rare realization of the J1-J2 spin chain model with an easily accessible saturation field, formerly estimated at 12 T. Exotic multipolar nematic phases were theoretically predicted in such compounds just below the saturation field, but without unambiguous experimental observation so far. In this paper we present extensive experimental research on the compound in a wide temperature (30 mK to 300 K) and field (0-13.3 T) range by muon spin rotation (μ SR ), 7Li nuclear magnetic resonance (NMR), and magnetic susceptibility (SQUID). μ SR experiments in zero magnetic field demonstrate the absence of long-range 3D ordering down to 30 mK. Together with former heat capacity data [Dutton et al., Phys. Rev. Lett. 108, 187206 (2012), 10.1103/PhysRevLett.108.187206], magnetic susceptibility measurements suggest a short-range-correlated vector chiral phase in the field range 0-4 T. At the intermediate-field values (5-12 T), the system enters a 3D-ordered spin density wave phase with 0.75 μB per copper site at lowest temperatures (125 mK), estimated by NMR. At still higher field, the magnetization is found to be saturated above 13 T where the spin lattice T1-1 relaxation reveals a spin gap estimated at 3.2(2) K. We narrow down the possibility of observing a multipolar nematic phase to the range 12.5-13 T.

  12. Measurements of 27 elements in garden and lawn fertilizers using instrumental neutron activation analysis

    International Nuclear Information System (INIS)

    Iskander, F.Y.

    1994-01-01

    Five locally available garden and lawn fertilizers were analyzed for elemental content using instrumental neutron activation analysis. The fertilizers were labeled as High Yield; Slow Release, 13-13-13; 16-8-4 and 28-4-4. The concentration ranges of the elements measured, in μg/g, were: Ba < 10-105; Br 0.55-272; Co 0.33-3.74; Cr 10.0-42.5; Cs 0.09-1.02; Eu 0.05-0.42; Fe 1840-9830; Ga < 1-4.6; Ge < 0.1-1.23; Hf 0.07-2.32; La 1.66-10.4; Na 57.6-3990; Nd < 9; Ni < 3-12.3; Rb 2.42-48.5; Sb 0.03-0.24; Sc 0.3-3.11; Se 2.68-10.2; Sm < 0.4-2.13; Sr 21.7-214; Ta < 0.01-0.052; Tb 0.05-0.28; Th 0.52-2.16; U 0.18-0.38; Zn 10.8-233 and Zr < 1-8.95. Some of these elements are recognized as micronutritiens (e.g., Fe and (Zn), and are necessary for plant growth. However, other elements may lead to undesirable environmental effects. The undiscriminating use of fertilizers, especially in home gardening, may result in the increase of toxic elements (Co, Cr, Se, Sb, Tb, U etc.) in the underground water supply. (author) 6 refs.; 1 tab

  13. Two-mode Diode-laser Spectroscopy with a InAsSb/InAsSbP Laser near 3.6 ćm

    Czech Academy of Sciences Publication Activity Database

    Civiš, Svatopluk; Danilova, A. P.; Imenkov, A. N.; Kolchanova, N. M.; Sherstnev, V. V.; Yakovlev, Yu. P.

    1999-01-01

    Roč. 33, č. 12 (1999), s. 1322-1327 ISSN 1063-7826 R&D Projects: GA AV ČR IAA4040708 Institutional research plan: CEZ:A54/98:Z4-040-9-ii Keywords : output frequency of InAsSb/InAsSbP * current dependence Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 0.565, year: 1999

  14. Molecular magnetism of M6 hexagon ring in D(3d) symmetric [(MCl)6(XW9O33)2](12-) (M = Cu(II) and Mn(II), X = Sb(III) and As(III)).

    Science.gov (United States)

    Yamase, Toshihiro; Ishikawa, Hirofumi; Abe, Hiroko; Fukaya, Keisuke; Nojiri, Hiroyuki; Takeuchi, Hideo

    2012-04-16

    Ferromagnetic [n-BuNH(3)](12)[(CuCl)(6)(SbW(9)O(33))(2)]·6H(2)O (1) and antiferromagnetic [n-BuNH(3)](12)[(MnCl)(6)(AsW(9)O(33))(2)]·6H(2)O (4) have been synthesized and structurally and magnetically characterized. Two complexes are structural analogues of [n-BuNH(3)](12)[(CuCl)(6)(AsW(9)O(33))(2)]·6H(2)O (2) and [n-BuNH(3)](12)[(MnCl)(6)(SbW(9)O(33))(2)]·6H(2)O (3) with their ferromagnetic interactions, first reported by us in 2006. (1) When variable temperature (T) direct current (dc) magnetic susceptibility (χ(M)) data are analyzed with the isotropic exchange Hamiltonian for the magnetic exchange interactions, χ(M)T vs T curves fitted by a full matrix diagonalization (for 1) and by the Kambe vector coupling method/Van Vleck's approximation (for 4) yield J = +29.5 and -0.09 cm(-1) and g = 2.3 and 1.9, respectively. These J values were significantly distinguished from +61.0 and +0.14 cm(-1) for 2 and 3, respectively. The magnetization under the pulsed field (up to 10(3) T/s) at 0.5 K exhibits hysteresis loops in the adiabatic process, and the differential magnetization (dM/dB) plots against the pulsed field display peaks characteristic of resonant quantum tunneling of magnetization (QTM) at Zeeman crossed fields, indicating single-molecule magnets for 1-3. High-frequency ESR (HFESR) spectroscopy on polycrystalline samples provides g(∥) = 2.30, g(⊥) = 2.19, and D = -0.147 cm(-1) for 1 (S = 3 ground state), g(∥) = 2.29, g(⊥) = 2.20, and D = -0.145 cm(-1) for 2 (S = 3), and g(∥) = 2.03 and D = -0.007 cm(-1) for 3 (S = 15). An attempt to rationalize the magnetostructural correlation among 1-4, the structurally and magnetically modified D(3d)-symmetric M (=Cu(II) and Mn(II))(6) hexagons sandwiched by two diamagnetic α-B-[XW(9)O(33)](9-) (X = Sb(III) and As(III)) ligands through M-(μ(3)-O)-W linkages, is made. The strongest ferromagnetic coupling for the Cu(6) hexagon of 2, the structure of which approximately provides the Cu(6)(μ(3)-O)(12

  15. Synthesis and thermoelectric properties of Sb{sub 0.20}CoSb{sub 2.80} skutterudite

    Energy Technology Data Exchange (ETDEWEB)

    Figueirêdo, C.A., E-mail: camila_fig@hotmail.com [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Gallas, M.R. [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Institute for Multiscale Simulations, Friedrich-Alexander-Universität, Nägelsbachstrasse 49b, 91052 Erlangen (Germany); Zorzi, J.E. [Universidade de Caxias do Sul, Instituto de Materiais Cerâmicos, 95765-000 Bom Princípio, RS (Brazil); Perottoni, C.A. [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Universidade de Caxias do Sul, Instituto de Materiais Cerâmicos, 95765-000 Bom Princípio, RS (Brazil)

    2014-06-15

    Highlights: • A HP-HT Sb{sub 0.20}CoSb{sub 2.80} phase was prepared by processing cobalt antimonide at 7.7 GPa and 550 °C, for (at least) 5 min. • The mechanism of formation of this phase involves (i) decomposition of cobalt antimonide into CoSb{sub 2} and Sb, and (ii) insertion of Sb into the remaining cobalt antimonide. • The mechanism of formation is qualitatively different from that responsible for the formation of the high pressure (greater than 20 GPa) phase. - Abstract: Polycrystalline samples of cobalt antimonide (CoSb{sub 2.79}) were submitted to different conditions of pressure, temperature and processing time, in a high-pressure toroidal-type chamber, aiming to maximize the production of the high pressure phase previously observed in experiments with a diamond anvil cell. Rietveld refinements of X-ray powder diffraction data were performed to determine the phase composition and structural parameters. The maximum yield, 89(2) wt.% of Sb{sub x}CoSb{sub 3−x} phase, was obtained at 7.7 GPa, 550 °C and (at least) 5 min of processing time. The mechanism behind the formation of Sb{sub x}CoSb{sub 3−x} at high pressure and high temperature is actually not the same as that previously inferred from experiments at higher pressures (20 GPa) and room temperature with the diamond anvil cell. Indeed, evidences suggest that, at high pressure and high temperature, Sb{sub x}CoSb{sub 3−x} is formed by insertion of Sb resulting from decomposition of cobalt antimonide. Thermal conductivity, Seebeck coefficient and electrical conductivity were estimated for CoSb{sub 2.79} and Sb{sub 0.20}CoSb{sub 2.80}. The thermoelectric figure of merit at room temperature for Sb{sub 0.20}CoSb{sub 2.80} resulted 33% greater than that for CoSb{sub 2.79}.

  16. Ultrafast crystallization and thermal stability of In-Ge doped eutectic Sb70Te30 phase change material

    International Nuclear Information System (INIS)

    Lee Meiling; Miao Xiangshui; Ting Leehou; Shi Luping

    2008-01-01

    Effect of In and Ge doping in the form of In 2 Ge 8 Sb 85 Te 5 on optical and thermal properties of eutectic Sb 70 Te 30 alloys was investigated. Crystalline structure of In 2 Ge 8 Sb 85 Te 5 phase change material consists of a mixture of phases. Thermal analysis shows higher crystallization temperature and activation energy for crystallization. Isothermal reflectivity-time measurement shows a growth-dominated crystallization mechanism. Ultrafast crystallization speed of 30 ns is realized upon irradiation by blue laser beam. The use of ultrafast and thermally stable In 2 Ge 8 Sb 85 Te 5 phase change material as mask layer in aperture-type super-resolution near-field phase change disk is realized to increase the carrier-to-noise ratio and thermal stability

  17. Crystal structure, thermally stability and photoluminescence properties of novel Sr10(PO4)6O:Eu2+ phosphors

    International Nuclear Information System (INIS)

    Guo, Qingfeng; Liao, Libing; Mei, Lefu; Liu, Haikun

    2015-01-01

    A series of novel luminescent phosphors Sr 10 (PO 4 ) 6 O:Eu 2+ with apatite structure were synthesized via a high temperature solid-state reaction. The phase structure, photoluminescence (PL) properties, the PL thermal stability, as well as the fluorescence decay curves of the samples were investigated to characterize the resulting samples, and the selected Sr 9.97 (PO 4 ) 6 O:0.03Eu 2+ phosphor exhibits strong thermal quenching resistance, retaining the luminance of 88.73% at 150 °C. The quenching concentration of Eu 2+ in Sr 10 (PO 4 ) 6 O was about 0.03 attributing to the dipole–quadrupole interaction. The Sr 10 (PO 4 ) 6 O:Eu 2+ phosphor exhibited a broad-band blue emission at 439 nm upon excitation at 346 nm. The results indicate that Sr 10 (PO 4 ) 6 O:Eu 2+ phosphors have potential applications as near UV-convertible phosphors for white-light UV LEDs. - Graphical abstract: Sr 10 (PO 4 ) 6 O:Eu 2+ phosphors have potential applications as near UV-convertible phosphors for white-light UV LEDs. - Highlights: • Sr 9.97 (PO 4 ) 6 O:0.03Eu 2+ phosphor exhibits strong thermal quenching resistance. • Two different Eu 2+ emission centers exists in Sr 10 (PO 4 ) 6 O. • The activation energy was also estimated for the Eu 2+ luminescence center

  18. The Role of Anionogenic Elements (As, Sb, Mo, Se, S, P, N, Cl, F, C) In The Formation of Technogenic Geochemical Anomalies

    Science.gov (United States)

    Abrosimova, Natalya; Bortnikova, Svetlana

    2017-12-01

    The study was conducted on the example of sulphide-containing mine tailings with a varying amount of sulphide and arsenide minerals, from three distinct tailings dumps situated in Russia: Karabash Mine Site, South Ural; Komsomolsk tailings impoundment, Kemerovo region; Khovu-Aksy mine site, Tuva Republic. The aim of the study was to compare the mobility of anionogenic elements (As, Sb, Mo, Se, S, P, N, Cl, F, C) and their role in migration, precipitation, and concentration of metals during the water-tailings interaction depending on the physicochemical parameters (pH, Eh) of the medium and the mineral composition of the waste material. Using slightly acidic leaching experiments the quantitative estimation of mobile forms of elements is given. Based on the compositions of the obtained water leaching solutions, aqueous speciation of chemical elements and saturation index of key minerals in the experimental solutions were calculated. The results of calculating forms of chemical elements made it possible to construct series of mobility of metals and metalloids in solutions with different physicochemical parameters. In the alkaline conditions, Sb>As>Cd>Cu>Zn>Fe>Pb, when the medium is acidified, the series changes, As>Cd>Cu>Zn>Pb>Sb>Fe in weakly alkaline conditions, Sb>Mn>As>Zn>Fe however, when the medium is acidified, the series changes to Cd>Mn>Pb>Cu>Zn>Sb>Ni>Fe>As under acidic conditions Cd>Cu>Zn>Pb>Mn>Fe>Se>Mo>Sb>As>Ni. The mineral composition of the tailings was investigated, which will allow to determine the sources of toxic elements and to understand the processes of secondary mineral formation in technogenic objects. Arsenopyrite and pyrite predominate in the heavy fraction of the Komsomolsk tailings impoundment, arsenopyrite grains are often corroded, Sb contained in Sb oxide and Sb sulfide. The pyrite and barite are determined in the solid matter of the Karabash Mine Site and chalcopyrite, sphalerite, tennantite Cu3AsS3, and tetrahedrite (Cu,Fe)12Sb4S13 are

  19. An Assessment of the USAFE School Board Test Program

    Science.gov (United States)

    2002-07-01

    2000. USAFE Strategic Plan on Dependent Education, Headquarters, USAFE, October 1998. Vajont ES, http://www.vajo-es.eu.odedodea.edu/ Vogelweh ES...Pordenone ES K–6 109 2/2/0 Vajont ES K–6 157 2/2/0 Aviano AB 4 1,365 11/11/1 4/4/1 10/0 Incirlik ES K–6 475 3/3/0 Incirlik HS 7–12 217...Aviano) K–6 109 AF SB VAJONT ES (Aviano) K–6 157 AVIANO ES K–6 629 AVIANO HS 7–12 470 VICENZA ES K–6 480 A IAC VICENZA HS 7–12 251

  20. Synthesis and some properties of monocrystals. [Monocrystals-SbTiNbO6

    Energy Technology Data Exchange (ETDEWEB)

    Popolitov, V I; Yaroslavskij, I M

    1985-01-01

    The Sb2O3-Nb2O5-TiO2- KHF2-H2O2-H2O system was studied in search for new ferroelectric monocrystals containing oxide forms of antimony, niobium and tantalum. The new compounds were synthesized in batch autoclaves at 500-600 deg, temperature gradient along the vertical autoclave axis being 0.2-0.5 degr/cm. The SbTiNbO6 monocrystals formed as a result of hydrothermal synthesis are assigned to rhombic crystal structure, their electric conductivity and dielectric permittivity at room temperature are 10 S xcm and 75, respectively. Differential thermal analysis of samples has shown the presence of phase transformation in them in the 270 to 280 range. Pyroelectric effect has been observed in monocrystals in the -180 to +280 deg range. The synthesized antimony titaniobate is concluded to be a ferroelectric with the Curie point Tsub(C)=280 +- 10 deg.

  1. Structure evolution upon chemical and physical pressure in (Sr{sub 1−x}Ba{sub x}){sub 2}FeSbO{sub 6}

    Energy Technology Data Exchange (ETDEWEB)

    Tiittanen, T.; Karppinen, M., E-mail: maarit.karppinen@aalto.fi

    2017-02-15

    Here we demonstrate the gradual structural transformation from the monoclinic I2/m to tetragonal I4/m, cubic Fm-3m and hexagonal P6{sub 3}/mmc structure upon the isovalent larger-for-smaller A-site cation substitution in the B-site ordered double-perovskite system (Sr{sub 1−x}Ba{sub x}){sub 2}FeSbO{sub 6}. This is the same transformation sequence previously observed up to Fm-3m upon heating the parent Sr{sub 2}FeSbO{sub 6} phase to high temperatures. High-pressure treatment, on the other hand, transforms the hexagonal P6{sub 3}/mmc structure of the other end member Ba{sub 2}FeSbO{sub 6} back to the cubic Fm-3m structure. Hence we may conclude that chemical pressure, physical pressure and decreasing temperature all work towards the same direction in the (Sr{sub 1−x}Ba{sub x}){sub 2}FeSbO{sub 6} system. Also shown is that with increasing Ba-for-Sr substitution level, i.e. with decreasing chemical pressure effect, the degree-of-order among the B-site cations, Fe and Sb, decreases. - Graphical abstract: In the (Sr{sub 1−x}Ba{sub x}){sub 2}FeSbO{sub 6} double-perovskite system the gradual structural transformation from the monoclinic I2/m to tetragonal I4/m, cubic Fm-3m and hexagonal P6{sub 3}/mmc structure is seen upon the isovalent larger-for-smaller A-site cation substitution. High-pressure treatment under 4 GPa extends stability of the cubic Fm-3m structure within a wider substitution range of x. - Highlights: • Gradual structural transitions upon A-cation substitution in (Sr{sub 1−x}Ba{sub x}){sub 2}FeSbO{sub 6.} • With increasing x structure changes from I2/m to I4/m, Fm-3m and P6{sub 3}/mmc. • Degree of B-site order decreases with increasing x and A-site cation radius. • High-pressure treatment extends cubic Fm-3m phase stability for wider x range. • High-pressure treatment affects bond lengths mostly around the A-cation.

  2. Experimental study of the Ca–Mg–Zn system using diffusion couples and key alloys

    Directory of Open Access Journals (Sweden)

    Yi-Nan Zhang, Dmytro Kevorkov, Florent Bridier and Mamoun Medraj

    2011-01-01

    Full Text Available Nine diffusion couples and 32 key samples were prepared to map the phase diagram of the Ca–Mg–Zn system. Phase relations and solubility limits were determined for binary and ternary compounds using scanning electron microscopy, electron probe microanalysis and x-ray diffraction (XRD. The crystal structure of the ternary compounds was studied by XRD and electron backscatter diffraction. Four ternary intermetallic (IM compounds were identified in this system: Ca3MgxZn15−x (4.6≤x≤12 at 335 °C, IM1, Ca14.5Mg15.8Zn69.7 (IM2, Ca2Mg5Zn13 (IM3 and Ca1.5Mg55.3Zn43.2 (IM4. Three binary compounds were found to have extended solid solubility into ternary systems: CaZn11, CaZn13 and Mg2Ca form substitutional solid solutions where Mg substitutes for Zn atoms in the first two compounds, and Zn substitutes for both Ca and Mg atoms in Mg2Ca. The isothermal section of the Ca–Mg–Zn phase diagram at 335 °C was constructed on the basis of the obtained experimental results. The morphologies of the diffusion couples in the Ca–Mg–Zn phase diagram at 335 °C were studied. Depending on the terminal compositions of the diffusion couples, the two-phase regions in the diffusion zone have either a tooth-like morphology or contain a matrix phase with isolated and/or dendritic precipitates.

  3. InAsSb for IR detection at 12 μm

    International Nuclear Information System (INIS)

    Dawson, L.R.

    1989-01-01

    The authors report the molecular beam epitaxial (MBE) growth of InAsSb alloys and superlattices on InSb substrates with intervening buffer layers designed to provide a lattice match to the SLS. Efficient incorporation of As is achieved by using an As 2 (thermally cracked) source in conjunction with an Sb 2 source at growth temperature of 425-450 0 C. At these temperatures desorption of excess Sb from the surface is limited and careful control of the Sb:In ratio is required. Even though the growth temperature is quite near the melting point of the alloys involved (525-550 0 C), TEM reveals abrupt, planar interfaces in superlattices with layer thicknesses less than 150 A. Undoped InSb layers are very pure, with n(77K) -- 1 x 10 14 cm -3 and μ(77K) --280,000 cm 2 V -1 sec -1 . Doping is easily controlled up to -- 10 18 using Be and PbSe. The entire structure (buffer plus SLS) is in tension with respect to the parent substrate, leading to extensive cracking for conventional buffer layers. More complex buffers, designed to more effectively relax the material to its equilibrium lattice constant, are used to solve this cracking problem. InAsSb SLSs grown on such buffer layers are crack-free and show marked reduction in dislocation density relative to that of the buffer layer. FTIR measurements made on SLSs with different compositions and differing amounts of strain in the active regions show optical absorption that is strain-shifted to wavelengths beyond λ c for bulk alloys, with substantial absorption beyond 12 μm

  4. Sn-Sb-Se based binary and ternary alloys for phase change memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Kyung-Min

    2008-10-28

    In this work, the effect of replacing Ge by Sn and Te by Se was studied for a systematic understanding and prediction of new potential candidates for phase change random access memories applications. The temperature dependence of the electrical/structural properties and crystallization kinetics of the Sn-Se based binary and Sn-Sb-Se based ternary alloys were determined and compared with those of the GeTe and Ge-Sb-Te system. The temperature dependence of electrical and structural properties were investigated by van der Pauw measurements, X-ray diffraction, X-ray reflectometry. By varying the heating rate, the Kissinger analysis has been used to determine the combined activation barrier for crystallization. To screen the kinetics of crystallization, a static laser tester was employed. In case of binary alloys of the type Sn{sub x}Se{sub 1-x}, the most interesting candidate is SnSe{sub 2} since it crystallizes into a single crystalline phase and has high electrical contrast and reasonably high activation energy for crystallization. In addition, the SnSe{sub 2}-Sb{sub 2}Se{sub 3} pseudobinary alloy system also might be sufficient for data retention due to their higher transition temperature and activation energy for crystallization in comparison to GeTe-Sb{sub 2}Te{sub 3} system. Furthermore, SnSe{sub 2}-Sb{sub 2}Se{sub 3} pseudobinary alloys have a higher crystalline resistivity. The desired rapid crystallization speed can be obtained for Sn{sub 1}Sb{sub 2}Se{sub 5} and Sn{sub 2}Sb{sub 2}Se{sub 7} alloys. (orig.)

  5. Phase 1/2 study of cyclin-dependent kinase (CDK)4/6 inhibitor palbociclib (PD-0332991) with bortezomib and dexamethasone in relapsed/refractory multiple myeloma.

    Science.gov (United States)

    Niesvizky, Ruben; Badros, Ashraf Z; Costa, Luciano J; Ely, Scott A; Singhal, Seema B; Stadtmauer, Edward A; Haideri, Nisreen A; Yacoub, Abdulraheem; Hess, Georg; Lentzsch, Suzanne; Spicka, Ivan; Chanan-Khan, Asher A; Raab, Marc S; Tarantolo, Stefano; Vij, Ravi; Zonder, Jeffrey A; Huang, Xiangao; Jayabalan, David; Di Liberto, Maurizio; Huang, Xin; Jiang, Yuqiu; Kim, Sindy T; Randolph, Sophia; Chen-Kiang, Selina

    2015-01-01

    This phase 1/2 study was the first to evaluate the safety and efficacy of the cyclin-dependent kinase (CDK) 4/6-specific inhibitor palbociclib (PD-0332991) in sequential combination with bortezomib and dexamethasone in relapsed/refractory multiple myeloma. The recommended phase 2 dose was palbociclib 100 mg orally once daily on days 1-12 of a 21-day cycle with bortezomib 1.0 mg/m2 (intravenous) and dexamethasone 20 mg (orally 30 min pre-bortezomib dosing) on days 8 and 11 (early G1 arrest) and days 15 and 18 (cell cycle resumed). Dose-limiting toxicities were primarily cytopenias; most other treatment-related adverse events were grade≤3. At a bortezomib dose lower than that in other combination therapy studies, antitumor activity was observed (phase 1). In phase 2, objective responses were achieved in 5 (20%) patients; 11 (44%) achieved stable disease. Biomarker and pharmacodynamic assessments demonstrated that palbociclib inhibited CDK4/6 and the cell cycle initially in most patients.

  6. New Materials for High Temperature Thermoelectric Power Generation

    Energy Technology Data Exchange (ETDEWEB)

    Kauzlarich, Susan [Univ. of California, Davis, CA (United States)

    2016-02-03

    The scope of this proposal was to develop two new high ZT materials with enhanced properties for the n- and p-leg of a thermoelectric device capable of operating at a maximum temperature of 1275 K and to demonstrate the efficiency in a working device. Nanostructured composites and new materials based on n– and p–type nanostructured Si1-xGex (ZT1273K ~ 1) and the recently discovered p–type high temperature Zintl phase material, Yb14MnSb11 (ZT1273K ~1) were developed and tested in a working device.

  7. Effects of heat treatment on the morphology of long-period stacking ordered phase and the corresponding mechanical properties of Mg–9Gd–xEr–1.6Zn–0.6Zr magnesium alloys

    International Nuclear Information System (INIS)

    Wang, Jingfeng; Song, Pengfei; Huang, Song; Pan, Fusheng

    2013-01-01

    This study investigates the effects of heat treatment on the morphology of long-period stacking ordered phase (LPSO) and the corresponding mechanical properties of Mg–9Gd–xEr–1.6Zn–0.6Zr (1–4 wt%) using optical microscopy, scanning electron microscopy, energy-dispersive X-ray spectrometry, X-ray diffraction, transmission electron microscopy, and tensile tests. The microstructure analysis of the as cast alloys showed that the volume fraction of the (Mg, Zn) 3 (Gd, Er) phase increased with increasing Er content. The (Mg, Zn) 3 (Gd, Er) phase in grain boundaries transformed into the 14H-LPSO phase Mg 12 Zn(Gd, Er) after heat treatment between 400 °C and 515 °C. The bulk shaped LPSO phases distributed along the grain boundaries produced isometric crystal grains in and enhanced the ductility of the as-extruded alloys. However, the lamellar LPSO phases precipitating in the grain interior induced strip-shaped grains in and improved the strength of the as-extruded alloys

  8. Phase formation kinetics, hardness and magnetocaloric effect of sub-rapidly solidified LaFe11.6Si1.4 plates during isothermal annealing

    Science.gov (United States)

    Dai, Yuting; Xu, Zhishuai; Luo, Zhiping; Han, Ke; Zhai, Qijie; Zheng, Hongxing

    2018-05-01

    High-temperature phase transition behavior and intrinsic brittleness of NaZn13-type τ1 phase in La-Fe-Si magnetocaloric materials are two key problems from the viewpoint of materials production and practical applications. In the present work, the Johnson-Mehl-Avrami-Kolmogorov (JMAK) equation was introduced to quantitatively characterize the formation kinetics of τ1 phase in sub-rapidly solidified LaFe11.6Si1.4 plates during the isothermal annealing process. Avrami index was estimated to be 0.43 (∼0.5), which suggests that the formation of τ1 phase is in a diffusion-controlled one-dimensional growth mode. Meanwhile, it is found that the Vickers hardness as a function of annealing time for sub-rapidly solidified plates also agrees well with the JMAK equation. The Vickers hardness of τ1 phase was estimated to be about 754. Under a magnetic field change of 30 kOe, the maximum magnetic entropy change was about 22.31 J/(kg·K) for plates annealed at 1323 K for 48 h, and the effective magnetic refrigeration capacity reached 191 J/kg.

  9. Distortion of Local Atomic Structures in Amorphous Ge-Sb-Te Phase Change Materials

    Science.gov (United States)

    Hirata, A.; Ichitsubo, T.; Guan, P. F.; Fujita, T.; Chen, M. W.

    2018-05-01

    The local atomic structures of amorphous Ge-Sb-Te phase-change materials have yet to be clarified and the rapid crystal-amorphous phase change resulting in distinct optical contrast is not well understood. We report the direct observation of local atomic structures in amorphous Ge2Sb2Te5 using "local" reverse Monte Carlo modeling dedicated to an angstrom-beam electron diffraction analysis. The results corroborated the existence of local structures with rocksalt crystal-like topology that were greatly distorted compared to the crystal symmetry. This distortion resulted in the breaking of ideal octahedral atomic environments, thereby forming local disordered structures that basically satisfied the overall amorphous structure factor. The crystal-like distorted octahedral structures could be the main building blocks in the formation of the overall amorphous structure of Ge-Sb-Te.

  10. Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase

    Science.gov (United States)

    Neogi, S. K.; Karmakar, R.; Misra, A. K.; Banerjee, A.; Das, D.; Bandyopadhyay, S.

    2013-11-01

    Structural, morphological, optical, and magnetic properties of nanocrystalline Zn1-xMnxO samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol-gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV-visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO3) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ1 and τ2 are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. Single phase structure has been observed up to 6 at% of Mn doping. Impurity phase has been developed above 6 at% of Mn doping. Antiferromagnetic and paramagnetic interactions are present in the samples. Defect parameters show sharp fall as Mn concentration above 6 at%. The magnetic and defect properties are modified by the formation of impurity phase.

  11. Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase

    International Nuclear Information System (INIS)

    Neogi, S.K.; Karmakar, R.; Misra, A.K.; Banerjee, A.; Das, D.; Bandyopadhyay, S.

    2013-01-01

    Structural, morphological, optical, and magnetic properties of nanocrystalline Zn 1−x Mn x O samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol–gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV–visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO 3 ) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ 1 and τ 2 are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. - highlights: • Single phase structure has been observed up to 6 at% of Mn doping. • Impurity phase has been developed above 6 at% of Mn doping. • Antiferromagnetic and paramagnetic interactions are present in the samples. • Defect parameters show sharp fall as Mn concentration above 6 at%. • The magnetic and defect properties are modified by the formation of impurity phase

  12. Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase

    Energy Technology Data Exchange (ETDEWEB)

    Neogi, S.K.; Karmakar, R. [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); Misra, A.K. [UGC DAE Consortium for Scientific Research, Salt Lake, Kolkata 700064 (India); Banerjee, A. [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); CRNN, University of Calcutta, JD 2, Sector III, Salt Lake, Kolkata 700098 (India); Das, D. [UGC DAE Consortium for Scientific Research, Salt Lake, Kolkata 700064 (India); Bandyopadhyay, S., E-mail: sbaphy@caluniv.ac.in [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); CRNN, University of Calcutta, JD 2, Sector III, Salt Lake, Kolkata 700098 (India)

    2013-11-15

    Structural, morphological, optical, and magnetic properties of nanocrystalline Zn{sub 1−x}Mn{sub x}O samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol–gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV–visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO{sub 3}) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ{sub 1} and τ{sub 2} are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. - highlights: • Single phase structure has been observed up to 6 at% of Mn doping. • Impurity phase has been developed above 6 at% of Mn doping. • Antiferromagnetic and paramagnetic interactions are present in the samples. • Defect parameters show sharp fall as Mn concentration above 6 at%. • The magnetic and defect properties are modified by the formation of impurity phase.

  13. Structure, microstructure and microhardness of rapidly solidified Smy(FexNi1-x)4Sb12 (x = 0.45, 0.50, 0.70, 1) thermoelectric compounds

    Science.gov (United States)

    Artini, C.; Castellero, A.; Baricco, M.; Buscaglia, M. T.; Carlini, R.

    2018-05-01

    Skutterudites are interesting compounds for thermoelectric applications. The main drawback in the synthesis of skutterudites by solidification of the melt is the occurrence of two peritectic reactions requiring long annealing times to form a single phase. Aim of this work is to investigate an alternative route for synthesis, based on rapid solidification by planar flow casting. The effect of cooling rate on phases formation and composition, as well as on structure, microstructure and mechanical properties of the filled Smy(FexNi1-x)4Sb12 (x = 0.45, 0.50, 0.70, 1) skutterudites was studied. Conversely to slowly cooled ingots, rapidly quenched ribbons show skutterudite as the main phase, suggesting that deep undercooling of the liquid prevents the nucleation of high temperature phases, such as (Fe,Ni)Sb and (Fe,Ni)Sb2. In as-quenched samples, a slightly out of equilibrium Sm content is revealed, which does not alter the position of the p/n boundary; nevertheless, it exerts an influence on crystallographic properties, such as the cell parameter and the shape of the Sb4 rings in the structure. As-quenched ribbons show a fine microstructure of the skutterudite phase (grain size of 2-20 μm), which only moderately coarsens after annealing at 873 K for 4 days. Vickers microhardness values (350-400 HV) of the skutterudite phase in as-quenched ribbons are affected by the presence of softer phases (i.e. Sb), which are homogeneously and finely dispersed within the sample. The skutterudite hardens after annealing as a consequence of a moderate grain growth, which limits the matrix effect due to the presence of additional phases.

  14. Studies on solid solutions based on layered honeycomb-ordered phases P2-Na{sub 2}M{sub 2}TeO{sub 6} (M=Co, Ni, Zn)

    Energy Technology Data Exchange (ETDEWEB)

    Berthelot, Romain; Schmidt, Whitney; Sleight, A.W. [Department of Chemistry, Oregon State University, Corvallis, OR 97331 (United States); Subramanian, M.A., E-mail: mas.subramanian@oregonstate.edu [Department of Chemistry, Oregon State University, Corvallis, OR 97331 (United States)

    2012-12-15

    Three complete solid solutions between the layered phases P2-Na{sub 2}M{sub 2}TeO{sub 6} (M=Co, Ni, Zn) have been prepared by conventional solid state method and investigated through X-ray diffraction, magnetism and optical measurements. All compositions are characterized by a M{sup 2+}/X{sup 6+} honeycomb ordering within the slabs and crystallize in a hexagonal unit cell. However, a structural transition based on a different stacking is observed as nickel (space group P6{sub 3}/mcm) is substituted by zinc or cobalt (space group P6{sub 3}22). All compositions exhibit a paramagnetic Curie-Weiss behavior at high temperatures; and the magnetic moment values confirm the presence of Ni{sup 2+} and/or Co{sup 2+} cations. The low-temperature antiferromagnetic order of Na{sub 2}Ni{sub 2}TeO{sub 6} and Na{sub 2}Co{sub 2}TeO{sub 6} is suppressed by zinc substitution. The color of the obtained compositions varies from pink, to light green and white when M=Co, Ni, Zn, respectively. - Graphical abstract: The comparison between the structure of Na{sub 2}Ni{sub 2}TeO{sub 6} (left) and Na{sub 2}M{sub 2}TeO{sub 6} (M=Co, Zn) (right) evidences the stacking difference with distinct atom sequences along the hexagonal c-axis. Highlights: Black-Right-Pointing-Pointer Solid solutions between lamellar phases Na{sub 2}M{sub 2}TeO{sub 6} (M=Co, Ni, Zn) are investigated. Black-Right-Pointing-Pointer A M{sup 2+}/X{sup 6+} honeycomb ordering characterized all the compositions. Black-Right-Pointing-Pointer A structural transition is shown when Ni is replaced by Co or Zn. Black-Right-Pointing-Pointer The low-temperature AFM ordering of Na{sub 2}Ni{sub 2}TeO{sub 6} and Na{sub 2}Co{sub 2}TeO{sub 6} is suppressed by zinc substitution. Black-Right-Pointing-Pointer Color changes from pink to light green and white when M=Co, Ni, Zn, respectively.

  15. Perturbed angular correlation experiments on the rehydration of ZnTiF6

    International Nuclear Information System (INIS)

    Ceolin, M.; Taylor, M.A.; Martinez, J.A.

    1997-01-01

    The rehydration process at room temperature, after the dehydration of ZnTiF 6 . 6H 2 O to ZnTiF 6 , was studied by means of the Time Differential Perturbed Angular Correlations technique.The time evolution of the hyperfine parameters related to the hyperfine interaction observed is reported and interpreted in terms of a simple model for the growth of the phases.In the framework of this model, the time evolution of the relative fractions of each interaction is interpreted

  16. Diffusion coefficients for Tl, Pb, Cd, In, Zn, Bi, As, Mo and Sb in hydrous rhyolite at 100-200 MPa

    Science.gov (United States)

    Berlo, Kim; Brooker, Richard; Wilke, Max

    2014-05-01

    A series of experiments have been conducted to determine the diffusivities of Tl, Pb, Cd, In, Zn, Bi, As, Mo and Sb in hydrous rhyolitic melt. Diffusion experiments used two adjoining glass cylinder of the same hydrous composition, one doped with the elements of interest at ~ 100 ppm. These couples were rapidly heated to 850, 1000 and 1150°C at 100-200 MPa for a few hours. After quenching the sectioned charges were analyzed by both synchrotron XRF (The Diamond Light Source) and LA-ICP-MS (University of Oxford). The data shows excellent correlation between these two techniques. The diffusion profiles were fitted to a 1-D diffusion couple equation to determine the diffusivities and fitting to the different temperature runs defined the Arrhenius parameters. We find that for 850°C the diffusion coefficients follow the trend Tl>Pb>Cd>Zn>In>Bi>As>Sb>Mo. Additional experiments were performed with either S or Cl added (to both sides of the diffusion couple). In general S increases the diffusion rate of all metals except Mo and Sb, which diffuse slower in the presence of S. Chlorine also speeds up the diffusion of metals with the exception of In, Mo and Sb. The systematic change in diffusivities of these metals and their different behaviour in the presence of the ligands that are also observed to be significant in volcanic gases, are important in determining the distribution of these metals during degassing (e.g. MacKenzie and Canil, 2008). This is particularly important in a dynamic environment such as a volcanic conduit. There are also implications for economic exploration and well as hazard mitigation.

  17. Properties of Mn0.4Zn0.6Fe2O4 and Mn0.6Zn0.4Fe2O4 as Nanocatalyst for Ammonia Production

    Directory of Open Access Journals (Sweden)

    Puspitasari Poppy

    2017-01-01

    Full Text Available Ammonia synthesis requires high pressure and high temperature process. Unfortunately, the capital intensive cost resulting low yield of ammonia by using recent catalyst which is iron oxide. Therefore, manganese zinc ferrite as a soft ferrite material will be introduced as a new nanocatalyst to enhance the ammonia yield. As a new nanocatalyst for ammonia production, study of comparasion two different concentration of MnZn Ferrite is very important. This paper will compare the yield of ammonia by using two different nanocatalyst which are Mn0.4Zn0.6Fe2O4 and Mn0.6Zn0.4Fe2O4. Both were synthesized by sol-gel method and has been characterize by using FESEM (morphology, XRD (phase identification, EDX (elemental analysis and TPR (oxide reduction. The ammonia was produce with and without magnetic field applied. The result shows that the ammonia yield is higher for Mn0.4Zn0.6Fe2O4 nanocatalyst than Mn0.6Zn0.4Fe2O4 by using magnetic field applied. 67.2% of yield has been achieved by using new nanocatalyst Mn0.6Zn0.4Fe2O4 and magnetic field applied at ambient environment.

  18. Kinetic modeling of 11C-SB207145 binding to 5-HT4 receptors in the human brain in vivo

    DEFF Research Database (Denmark)

    Marner, Lisbeth; Gillings, Nic; Comley, Robert A

    2009-01-01

    The serotonin 4 receptor (5-HT(4) receptor) is known to be involved in learning and memory. We evaluated for the first time the quantification of a novel 5-HT(4) receptor radioligand, (11)C-SB207145, for in vivo brain imaging with PET in humans. METHODS: For evaluation of reproducibility, 6...

  19. Nanoscale thermoelectric materials

    International Nuclear Information System (INIS)

    Failamani, F.

    2015-01-01

    binary Zr-B system. Interestingly, the FeB phases are formed only by addition of small amounts of group IV metals to TaB. These high temperature phases may serve as nano particles to decrease the thermal conductivity of the composite by reducing the phonon mean free path on the grain boundaries, thus improving ZT. In order to define an electrode material suitable for long-term operation in contact with Sb-based skutterudite thermoelectrics at the hot end of the TE-device, the detailed knowledge of the binary metal - antimony phase diagrams and properties of phases formed in the diffusion zone are required. Hitherto, only the Nb-Sb phase diagram has been reported with some controversial results, whilst the {V,Ta}-Sb phase diagrams have not been constructed yet. Chapter 3 summarizes the investigation on the {V,Nb,Ta}-Sb systems to close this gap and to remove ambiguities from the Nb-Sb diagram. Moreover physical properties of {V,Nb,Ta}Sb2 that are formed in the diffusion zones have been studied in the temperature region relevant for automotive application of skutterudite thermoelectrics (up to 600°C). A novel ternary compound with composition close to “Ba2V5Sb9” was observed in the diffusion zones between V and n-type Ba0.3Co4Sb12 at 600°C. Structural investigation revealed the correct formula as Ba5V12Sb19+x, isotypic with Ba5Ti12Sb19+x, however, with some additional site occupation and disorder. Search for isotypic compounds among the rest of early transition metals revealed that Nb and Ta form the corresponding phases at 700°C. However, only the formation of Ba5Nb12Sb19+x was confirmed by both XRPD and XRSC data, while neither the bulk nor the single crystal of Ba5Ta12Sb19+x could be obtained to confirm its formation. A detailed study on the crystal structure and its impact on the physical (transport and thermal) properties of these compounds are presented in chapter 4. In our search for new TE materials we studied the {La,Ce}-(Ni,Zn)-Si systems. The

  20. Am and Eu extraction from acidic media by synergistic mixtures of substituted bis-tetrazolyl pyridines with chlorinated cobalt dicarbollide

    International Nuclear Information System (INIS)

    Smirnov, I.V.; Chirkov, A.V.; Babain, V.A.; Pokrovskaya, E.Yu.; Artamonova, T.A.

    2009-01-01

    Americium (Am) and europium (Eu) extraction from HNO 3 and HClO 4 media by a synergistic mixture of 2.6-bis(1-aryl-1H-tetrazol-5-yl)pyridines (ATP) with chlorinated cobalt dicarbollide (CCD) was studied by using m-nitrobenzotrifluoride, phenyltrifluoromethyl sulfone, and 1,2-dichloroethane as diluents. We examined the effects of diluents, of the aqueous phase composition and the nature of substituents in the ATP aryl ring on Am/Eu extraction efficiency and selectivity. The Am/Eu separation factor was found to be close to 100 at the optimal ratio of ATPs: CCD ∝ 1:1. We also studied the extraction of 85 Sr, 137 Cs and 133 Ba; a PhATP-CCD mixture provided the separation of the Sr/Ba pair with a factor of 35. A high resistance of 2,6-bis-aryltetrazolyl pyridines to 6 M nitric and perchloric acids at 95 C was demonstrated. (orig.)

  1. Batagayite, CaZn2(Zn,Cu)6(PO4)4(PO3OH)3·12H2O, a new phosphate mineral from Këster tin deposit (Yakutia, Russia): occurrence and crystal structure

    Science.gov (United States)

    Yakovenchuk, Victor N.; Pakhomovsky, Yakov A.; Konopleva, Nataliya G.; Panikorovskii, Taras L.; Bazai, Ayya; Mikhailova, Julia A.; Bocharov, Vladimir N.; Ivanyuk, Gregory Yu.; Krivovichev, Sergey V.

    2017-12-01

    Batagayite, CaZn2(Zn,Cu)6(PO4)4(PO3OH)3·12H2O, is a new secondary phosphate mineral from the Këster deposit, Arga-Ynnykh-Khai massif, NE Yakutia, Russia. It is monoclinic, P21, a = 8.4264(4), b = 12.8309(6), c = 14.6928(9) Å, β = 98.514(6)o, V = 1571.05(15) Å3 and Z = 2 (from single-crystal X-ray diffraction data). Batagayite crystals are blades up to 2 mm long, flattened on {001} and elongated on [100]; blades often grow in radial aggregates. Associated minerals are arsenolite, native copper, epifanovite, fluorapatite, libethenite, Na-analogue of batagayite, pseudomalachite, quartz, sampleite, tobermorite, and Mg-analogue of hopeite. The streak is white and the luster is vitreous. The mineral is brittle and has a perfect cleavage on {001}, no parting was observed. The Mohs hardness is 3. Density, determined by the float-sink method in Clerici solution, is 2.90(3) g/cm3, and the calculated density is 3.02 g/cm3 (using the empirical formula and single-crystal unit-cell parameters). Batagayite is biaxial, optically negative, α = 1.566 ± 0.002, β = 1.572 ± 0.002, γ = 1.573 ± 0.002 at 589 nm. 2V meas. = 40(5)°, 2V calc = 44.3°. Optical orientation: Z is perpendicular to (001), further details unclear. No dispersion or pleochroism were observed. The mean chemical composition determined by electron microprobe is: Na2O 0.31, MgO 1.39, Al2O3 0.55, SiO2 0.48, P2O5 34.37, K2O 0.17, CaO 2.76, MnO 1.03, CuO 5.80, ZnO 35.62, CdO 0.24 wt%. The H2O content estimated from the crystal-structure refinement is 16.83 wt%, giving a total of 99.55 wt%. The empirical formula calculated on the basis of P + Si = 7 is (Zn6.22Cu1.04Ca0.70Mg0.49Mn0.21Al0.15Na0.14K0.05Cd0.03)Σ9.03(P6.89Si0.11)Σ7.00O24.91(OH)3.09·12.10H2O. The mineral easily dissolves in 10% room-temperature HCl. The eight diagnostic lines in the X-ray powder-diffraction pattern are (I-d[Å]-hkl): 100-14.59-001, 25-6.34-012, 11-6.02-111, 37-4.864-003, 13-4.766-112, 20-3.102-1 \\overline {2} \\overline {4} , 11

  2. Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

    Science.gov (United States)

    Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S. K.

    2014-06-01

    We have carried out comprehensive computational and experimental study on the face-centered cubic Ge2Sb2Te5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In2Te3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation α hν = β (hν - E_{{g }} )2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials.

  3. Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

    International Nuclear Information System (INIS)

    Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S.K.

    2014-01-01

    We have carried out comprehensive computational and experimental study on the face-centered cubic Ge 2 Sb 2 Te 5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In 2 Te 3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation αhν = β(hν - E g ) 2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials. (orig.)

  4. Construction, expression, and function of 6B11ScFv-mIL-12, a fusion protein that attacks human ovarian carcinoma.

    Science.gov (United States)

    Cheng, Hongyan; Ye, Xue; Chang, Xiaohong; Ma, Ruiqiong; Cong, Xu; Niu, Yidong; Zhang, Menglei; Liu, Kai; Cui, Heng; Sang, Jianli

    2015-04-01

    We previously produced an anti-idiotypic monoclonal antibody, 6B11, which mimics ovarian cancer antigen CA166-9 and induces cellular and humoral immunity. Here, to enhance the immunogenicity of 6B11, we constructed the 6B11ScFv-mIL-12 fusion protein (FP), by fusing single-chain fragment of 6B11 variable region (6B11ScFv) with mouse interleukin-12 (mIL-12), which was expressed in eukaryotic 293EBNA cells transfected with pSBI vectors. A binding activity assay showed 6B11ScFv-mIL-12 to have activities of both 6B11 and mIL-12-it specifically bound both ovarian monoclonal antibody COC166-9 and rabbit anti-mouse IL-12 antibody. The immune activity assay showed 6B11ScFv-mIL-12 to promote proliferation of lymphocytes stimulated by phytohemagglutinin, increase the absolute numbers and percentages of CD3(-)/CD56(+) natural killer cells and CD3(+)/CD56(+) natural killer T cells among peripheral lymphocytes, and increase interferon-γ. The FP was specifically cytotoxic to the CA166-9(+) ovarian cancer cell lines HOC1A and SKOV3 and inhibited growth of ID8 subcutaneous tumors in C57BL/6J mice. This study provides an experimental basis for clinical use of 6B11ScFv-mIL-12 in ovarian cancer therapy. To our knowledge, this is the first report of a fusion protein from an anti-idiotypic antibody and IL-12.

  5. Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors

    Energy Technology Data Exchange (ETDEWEB)

    Arikata, Suguru; Kyono, Takashi [Semiconductor Technologies Laboratory, Sumitomo Electric Industries, LTD., Hyogo (Japan); Miura, Kouhei; Balasekaran, Sundararajan; Inada, Hiroshi; Iguchi, Yasuhiro [Transmission Devices Laboratory, Sumitomo Electric Industries, LTD., Yokohama (Japan); Sakai, Michito [Sensor System Research Group, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki (Japan); Katayama, Haruyoshi [Space Technology Directorate I, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki (Japan); Kimata, Masafumi [College of Science and Engineering, Ritsumeikan University, Shiga (Japan); Akita, Katsushi [Sumiden Semiconductor Materials, LTD., Hyogo (Japan)

    2017-03-15

    InAs/GaSb superlattice (SL) structures were fabricated on GaSb substrates by metalorganic vapor phase epitaxy (MOVPE) toward midwavelength infrared (MWIR) photodiodes. Almost defect-free 200-period SLs with a strain-compensation interfacial layer were successfully fabricated and demonstrate an intense photoluminescence peak centered at 6.1 μm at 4 K and an external quantum efficiency of 31% at 3.5 μm at 20 K. These results indicate that the high-performance MWIR detectors can be fabricated in application with the InAs/GaSb SLs grown by MOVPE as an attractive method for production. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Quantum oscillations and Dirac dispersion in the BaZnBi2 semimetal guaranteed by local Zn vacancy order

    Science.gov (United States)

    Zhao, K.; Golias, E.; Zhang, Q. H.; Krivenkov, M.; Jesche, A.; Gu, L.; Rader, O.; Mazin, I. I.; Gegenwart, P.

    2018-03-01

    We have synthesized single crystals of Dirac semimetal candidates A ZnBi2 with A =Ba and Sr. In contrast to A =Sr , the Ba material displays a local Zn vacancy ordering, which makes the observation of quantum oscillations in out-of-plane magnetic fields possible. As a Dirac semimetal candidate, BaZnBi2 exhibits a small cyclotron electron mass, high quantum mobility, and nontrivial Berry phases. Three Dirac dispersions are observed by angle-resolved photoemission spectroscopy and identified by first-principles band-structure calculations. Compared to A Mn(Bi/Sb) 2 systems which host Mn magnetic moments, BaZnBi2 acts as a nonmagnetic analog to investigate the intrinsic properties of Dirac fermions in this structure family.

  7. Synthesis and characterization of single-phase Mn-doped ZnO

    Science.gov (United States)

    Chattopadhyay, S.; Dutta, S.; Banerjee, A.; Jana, D.; Bandyopadhyay, S.; Chattopadhyay, S.; Sarkar, A.

    2009-05-01

    Different samples of Zn 1-xMn xO series have been prepared using conventional solid-state sintering method. We identified up to what extent doping will enable us to synthesize single-phase polycrystalline Mn-doped ZnO sample, which is one of the prerequisites for dilute magnetic semiconductor, and we have analyzed its some other physical aspects. In synthesizing the samples, proportion of Mn varies from 1 to 5 at%. However, the milling time varied (6, 12, 24, 48 and 96 h) only for 2 at% Mn-doped samples while for other samples (1, 3, 4 and 5 at% Mn doped) the milling time has been fixed to 96 h. Room-temperature X-ray diffraction (XRD) data reveal that all of the prepared samples up to 3 at% of Mn doping exhibit wurtzite-type structure, and no segregation of Mn and/or its oxides has been found. The 4 at% Mn-doped samples show a weak peak of ZnMn 2O 4 apart from the other usual peaks of ZnO and the intensity of this impurity peak has been further increased for 5 at% of Mn doping. So beyond 3 at% doping, single-phase behavior is destroyed. Band gap for all the 2 at% Mn-doped samples has been estimated to be between 3.21 and 3.19 eV and the reason for this low band gap values has been explained through the grain boundary trapping model. The room-temperature resistivity measurement shows an increase of resistivity up to 48 h of milling and with further milling it saturates. The defect state of these samples has been investigated using the positron annihilation lifetime (PAL) spectroscopy technique. Here all the relevant lifetime parameters of positron i.e. free annihilation ( τ1) at defect site ( τ2) and average ( τav) increases with milling time.

  8. Synthesis and characterization of single-phase Mn-doped ZnO

    International Nuclear Information System (INIS)

    Chattopadhyay, S.; Dutta, S.; Banerjee, A.; Jana, D.; Bandyopadhyay, S.; Chattopadhyay, S.; Sarkar, A.

    2009-01-01

    Different samples of Zn 1-x Mn x O series have been prepared using conventional solid-state sintering method. We identified up to what extent doping will enable us to synthesize single-phase polycrystalline Mn-doped ZnO sample, which is one of the prerequisites for dilute magnetic semiconductor, and we have analyzed its some other physical aspects. In synthesizing the samples, proportion of Mn varies from 1 to 5 at%. However, the milling time varied (6, 12, 24, 48 and 96 h) only for 2 at% Mn-doped samples while for other samples (1, 3, 4 and 5 at% Mn doped) the milling time has been fixed to 96 h. Room-temperature X-ray diffraction (XRD) data reveal that all of the prepared samples up to 3 at% of Mn doping exhibit wurtzite-type structure, and no segregation of Mn and/or its oxides has been found. The 4 at% Mn-doped samples show a weak peak of ZnMn 2 O 4 apart from the other usual peaks of ZnO and the intensity of this impurity peak has been further increased for 5 at% of Mn doping. So beyond 3 at% doping, single-phase behavior is destroyed. Band gap for all the 2 at% Mn-doped samples has been estimated to be between 3.21 and 3.19 eV and the reason for this low band gap values has been explained through the grain boundary trapping model. The room-temperature resistivity measurement shows an increase of resistivity up to 48 h of milling and with further milling it saturates. The defect state of these samples has been investigated using the positron annihilation lifetime (PAL) spectroscopy technique. Here all the relevant lifetime parameters of positron i.e. free annihilation (τ 1 ) at defect site (τ 2 ) and average (τ av ) increases with milling time.

  9. Structural, elastic, electronic, optical and thermoelectric properties of the Zintl-phase Ae3AlAs3 (Ae = Sr, Ba)

    Science.gov (United States)

    Benahmed, A.; Bouhemadou, A.; Alqarni, B.; Guechi, N.; Al-Douri, Y.; Khenata, R.; Bin-Omran, S.

    2018-05-01

    First-principles calculations were performed to investigate the structural, elastic, electronic, optical and thermoelectric properties of the Zintl-phase Ae3AlAs3 (Ae = Sr, Ba) using two complementary approaches based on density functional theory. The pseudopotential plane-wave method was used to explore the structural and elastic properties whereas the full-potential linearised augmented plane wave approach was used to study the structural, electronic, optical and thermoelectric properties. The calculated structural parameters are in good consistency with the corresponding measured ones. The single-crystal and polycrystalline elastic constants and related properties were examined in details. The electronic properties, including energy band dispersions, density of states and charge-carrier effective masses, were computed using Tran-Blaha modified Becke-Johnson functional for the exchange-correlation potential. It is found that both studied compounds are direct band gap semiconductors. Frequency-dependence of the linear optical functions were predicted for a wide photon energy range up to 15 eV. Charge carrier concentration and temperature dependences of the basic parameters of the thermoelectric properties were explored using the semi-classical Boltzmann transport model. Our calculations unveil that the studied compounds are characterised by a high thermopower for both carriers, especially the p-type conduction is more favourable.

  10. Scalable synthesis of 5,11-diethynylated indeno[1,2-b]fluorene-6,12-diones and exploration of their solid state packing

    Directory of Open Access Journals (Sweden)

    Bradley D. Rose

    2014-09-01

    Full Text Available We report a new synthetic route to 5,11-disubstituted indeno[1,2-b]fluorene-6,12-diones that is amenable to larger scale reactions, allowing for the preparation of gram amounts of material. With this new methodology, we explored the effects on crystal packing morphology for the indeno[1,2-b]fluorene-6,12-diones by varying the substituents on the silylethynyl groups.

  11. Exotic spin phases in the one-dimensional spin-1/2 quantum magnet LiCuSbO{sub 4} as seen by high-field NMR and ESR spectroscopies

    Energy Technology Data Exchange (ETDEWEB)

    Iakovleva, Margarita [IFW Dresden, Dresden (Germany); TU Dresden, Dresden (Germany); Zavoisky Physical Technical Institute, Kazan (Russian Federation); Grafe, Hans-Joachim; Kataev, Vladislav; Alfonsov, Alexey; Sturza, Mihai I.; Wurmehl, Sabine [IFW Dresden, Dresden (Germany); Vavilova, Evgeniia [Zavoisky Physical Technical Institute, Kazan (Russian Federation); Nojiri, Hiroyuki [Institute of Materials Research, Sendai (Japan); Buechner, Bernd [IFW Dresden, Dresden (Germany); TU Dresden, Dresden (Germany)

    2016-07-01

    We will present our recent results of high-field NMR and sub-THz ESR studies of the quantum magnet LiCuSbO{sub 4} (LCSO) that presents an excellent model system of a one-dimensional spin-1/2 quantum magnet with frustrated exchange interactions. Such networks are predicted to exhibit a plethora of novel ground states beyond classical ferro- or antiferromagnetic phases. In LCSO the absence of a long-range magnetic order down to sub-Kelvin temperatures is suggestive of the realization of a quantum spin liquid state. Our NMR and ESR measurements in strong magnetic fields up to 16 Tesla reveal clear indications for the occurrence of an exotic field-induced hidden phase which we will discuss in terms of multipolar physics.

  12. The synthesis and characterization of 1,2-dihydroxyimino-3,6-di-aza-8,9-O-iso-butylidene nonane and its complexes with Ni(II), Cu(II), Zn(II) and Cd(II)

    International Nuclear Information System (INIS)

    Canpolat, E.; Kaya, M.; Gorgulu, A.O.

    2002-01-01

    1,2-dihydroxyimino-3,6-di-aza-8,9-O-iso-butylidene nonane (H 2 L) was synthesized starting from 1,2-O-iso-butylidene-4-aza-6-amino hexane (RNH 2 ) and antichloroglyoxime. Ni(II) and Cu(II) complexes of H 2 L have a metal:ligand ratio 1:2 and the ligand coordinates through two N atoms, as do most of the vic-dioximes. However, Zn(II) and Cd(II) complexes of H 2 L have a metal: ligand ratio 1:1 and one chloride ion and one water molecule are also coordinated to the metal ion. Structures of the ligand and its transition-metal complexes are proposed, according to elemental analysis, IR, 13 C and 1 H NMR spectra, magnetic susceptibility measurements and thermogravimetric analyses (TGA). (author)

  13. Temperature-dependent phase separation during annealing of Ge{sub 2}Sb{sub 2}Te{sub 5} thin films in vacuum

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Zheng [Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore117602 (Singapore); Pan Jisheng, E-mail: js-pan@imre.a-star.edu.sg [Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore117602 (Singapore); Fang, Lina Wei-Wei; Yeo, Yee-Chia [Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore 119260 (Singapore); Foo, Yong Lim [Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore117602 (Singapore); Zhao Rong; Shi Luping [Data Storage Institute, A-STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Tok, Eng Soon [Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore117602 (Singapore); Department of Physics, National University of Singapore (NUS), Singapore 119260 (Singapore)

    2012-06-01

    Thermal stability of 100 nm Ge{sub 2}Sb{sub 2}Te{sub 5} thin film during annealing from room temperature to 240 Degree-Sign C inside a UHV chamber was studied in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD) and atomic force microscopy (AFM). Ge species are found to diffuse preferentially to the surface when GST film is annealed from 25 Degree-Sign C to 100 Degree-Sign C. This process is accompanied by a change of phase whereby the amorphous film completely becomes face-center-cubic (FCC) phase at 100 Degree-Sign C. From 100 Degree-Sign C to 200 Degree-Sign C, both Sb and Te species are observed to diffuse more to the surface. The FCC phase is partially changed into hexagonal-close-pack (HCP) phase at 200 Degree-Sign C. At 220 Degree-Sign C, FCC phase is completely transformed into HCP phase. Loss of Sb and Te are also detected from the surface and this is attributed to desorption due to their high vapor pressures. At 240 Degree-Sign C, Sb and Te species are found to have desorbed completely from the surface, and leave behind Ge-rich 3D droplets on the surface. The separation of Ge{sub 2}Sb{sub 2}Te{sub 5} into Sb,Te-rich phase and Ge-rich phase is thus the main mechanism to account for the failure of Ge{sub 2}Sb{sub 2}Te{sub 5}-based phase change memory devices under thermal stress.

  14. Resonant photoemission study of CeRu4Sb12

    International Nuclear Information System (INIS)

    Ishii, Hiroyoshi; Miyahara, Tsuneaki; Takayama, Yasuhiro; Shiozawa, Hidetsugu; Obu, Kenji; Matsuda, Tatsuma D.; Aoki, Yuji; Sugawara, Hitoshi; Sato, Hideyuki

    2005-01-01

    We have measured the Ce 4d-4f and Ce 3d-4f resonant photoemission spectra of CeRu 4 Sb 12 . The Ce 4f spectra show the spectral features corresponding to a weakly hybridized system. The number of 4f electrons is estimated to be ∼1.0

  15. Raman spectra of the system TeCl4-SbCl5

    International Nuclear Information System (INIS)

    Brockner, W.; Demiray, A.F.

    1980-01-01

    Raman spectra of the solid and molten TeCl 4 . SbCl 5 addition compound and of some TeCl 4 -SbCl 5 mixtures have been recorded. Two modifications of the crystalline TeCl 4 -SbCl 5 compound have been found. The structure of the melt can be described by the equilibrium TeCl 3 + + SbCl 6 - reversible TeCl 4 + SbCl 5 lying on the left side. Mixtures with other stoichiometry contain the 1:1 adduct only and excess TeCl 4 or SbCl 5 , respectively. Such melts are built up by the ionic species TeCl 3 + and SbCl 6 - also and TeCl 4 or SbCl 5 according to stoichiometry. (author)

  16. Phase relations in the pseudo ternary system In2O3-TiO2-BO (B: Zn, Co and Ni) at 1200 °C in air

    Science.gov (United States)

    Brown, Francisco; Jacobo-Herrera, Ivan Edmundo; Alvarez-Montaño, Victor Emmanuel; Kimizuka, Noboru; Hirano, Tomonosuke; Sekine, Ryotaro; Denholme, Saleem J.; Miyakawa, Nobuaki; Kudo, Akihiko; Iwase, Akihide; Michiue, Yuichi

    2018-02-01

    Phase relations in the pseudo ternary systems In2O3-TiO2-ZnO, In2O3-TiO2-CoO and In2O3-TiO2-NiO at 1200 °C in air were determined by means of a classic quenching method. In6Ti6BO22 (B: Zn, Co and Ni) which has the monoclinic In(Fe1/4Ti3/4)O27/8-type of structure with a 4-dimensional super space group exists in a stable form. There exist homologous phases In1+x(Ti1/2Zn1/2)1-xO3(ZnO)m (m: natural number, 0ternary system In2O3-TiO2-ZnO. All the ions are on the trigonal lattice points, the In(III) is in the octahedral coordination with the oxygen and the {Inx(Ti1/2Zn1/2)1-xZnm} is in the trigonalbipyramidal coordination with oxygen in the crystal structures of each homologous compound. They have R 3 bar m (No. 166) for m = odd or P63/mmc (No. 194) for m = even in space group. Lattice constants for each of the homologous compounds as a hexagonal setting and In6Ti6BO22 as the monoclinic system were determined by means of the powder X-ray diffraction method at room temperature. The temperature dependence of resistivity for In1+x(Ti1/2Zn1/2)1-x(ZnO)4 (0.15 ≤ x ≤ 1) showed semiconducting-like behavior for all samples examined at T(K) = 2-300. The resistivity increased systematically with decreasing x (0.7 ≤ x ≤ 1), and it was found that samples where x ≤ 0.7 became insulators. The optical band gap Eg (eV) of In1+x(Ti1/2Zn1/2)1-x(ZnO)4 has been estimated from the diffuse reflection spectra for the whole range of x (0.15 ≤ x ≤ 1). A minimum value of 2.0717 eV for x = 1 and a maximum one of 3.066 eV for x = 0.15 were observed. Dependence of the crystal structures of the InAO3(BO), In(Ti1/2B1/2)O3(B‧O) and stability of In6Ti6BO22 upon the constituent cations in the pseudo quaternary system In2O3-TiO2-A2O3-BO (A: Fe, Ga and Cr; B, B‧: Mg, Zn, Co, Ni, Ca and Sr) were discussed in terms of their ionic radii and site preference effects.

  17. Contact of ZnSb thermoelectric material to metallic electrodes using S-Bond 400 solder alloy

    DEFF Research Database (Denmark)

    Malik, Safdar Abbas; Le, Thanh Hung; Van Nong, Ngo

    2018-01-01

    and metallic electrodes. In this paper, we investigate the joining of ZnSb to Ni and Ag electrodes using a commercial solder alloy S-Bond 400 and hot-pressing technique. Ti and Cr layers are also introduced as a diffusion barrier and microstructure at the interfaces is observed by scanning electron microscopy....... We found that S-bond 400 solder reacts with Ag and Ni electrodes to form different alloys at the interfaces. Cr layer was found to be broken after joining, resulting in a thicker reaction/diffusion layer at the interface, while Ti layer was preserved....

  18. Water adsorbate phases on ZnO and impact of vapor pressure on the equilibrium shape of nanoparticles

    Science.gov (United States)

    Kenmoe, Stephane; Biedermann, P. Ulrich

    2018-02-01

    ZnO nanoparticles are used as catalysts and have potential applications in gas-sensing and solar energy conversion. A fundamental understanding of the exposed crystal facets, their surface chemistry, and stability as a function of environmental conditions is essential for rational design and improvement of synthesis and properties. We study the stability of water adsorbate phases on the non-polar low-index (10 1 ¯ 0 ) and (11 2 ¯ 0 ) surfaces from low coverage to multilayers using ab initio thermodynamics. We show that phonon contributions and the entropies due to a 2D lattice gas at low coverage and multiple adsorbate configurations at higher coverage have an important impact on the stability range of water adsorbate phases in the (T,p) phase diagram. Based on this insight, we compute and analyze the possible growth mode of water films for pressures ranging from UHV via ambient conditions to high pressures and the impact of water adsorption on the equilibrium shape of nanoparticles in a humid environment. A 2D variant of the Wulff construction shows that the (10 1 ¯ 0 ) and (11 2 ¯ 0 ) surfaces coexist on 12-faceted prismatic ZnO nanoparticles in dry conditions, while in humid environment, the (10 1 ¯ 0 ) surface is selectively stabilized by water adsorption resulting in hexagonal prisms.

  19. Low-temperature elastic properties of YbSbPt probed by ultrasound measurements

    Science.gov (United States)

    Nakanishi, Y.; Takahashi, S.; Ohyama, R.; Hasegawa, J.; Nakamura, M.; Suzuki, H.; Yoshizawa, M.

    2018-03-01

    The elastic properties of a single crystal of the half-Heusler compound YbSbPt have been investigated by means of the ultrasonic measurement. In particular, careful measurements of the temperature (T) dependent elastic constant C 11(T) was performed in the vicinity of its phase transition point near T N of 0.5 K. A clear step-like anomaly accompanied by spin-density-wave type antiferromagnetic (AFM) phase transition was found in the C 11(T) curve. The low-temperature magnetic phase diagram is proposed on the basis of the results. The phase diagram consists of, at least two main distinct phases: a low-field and high-field regime with a transition field of approximately 0.6 T at zero field. We discuss the low-temperature elastic property based on analysis of Landau-type free energy.

  20. Phase relation of LaFe11· 6Si1· 4 compounds annealed at different ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 35; Issue 2. Phase relation of LaFe11.6Si1.4 compounds annealed at different high-temperature and the magnetic property of LaFe11.6−CoSi1.4 compounds. Xiang Chen Yungui Chen Yongbai Tang. Volume 35 Issue 2 April 2012 pp 175-182 ...

  1. Anomalous Phase Change in [(GeTe)2/(Sb2Te3)]20 Superlattice Observed by Coherent Phonon Spectroscopy

    Science.gov (United States)

    Makino, K.; Saito, Y.; Mitrofanov, K.; Tominaga, J.; Kolobov, A. V.; Nakano, T.; Fons, P.; Hase, M.

    The temperature-dependent ultrafast coherent phonon dynamics of topological (GeTe)2/(Sb2Te3) super lattice phase change memory material was investigated. By comparing with Ge-Sb-Te alloy, a clear contrast suggesting the unique phase change behavior was found.

  2. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Boniardi, Mattia; Redaelli, Andrea [Micron Semiconductor Italia S.r.l., Via C. Olivetti, 2, 20864, Agrate Brianza, MB (Italy)

    2015-01-12

    Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  3. Synthesis process and structural characterization of the Sr{sub 2}EuRuO{sub 6} complex perovskite

    Energy Technology Data Exchange (ETDEWEB)

    Triana, C.A.; Landinez Tellez, D.A. [Grupo de Fisica de Nuevos Materiales (GFNM), Departamento de Fisica, Universidad Nacional de Colombia, Bogota D.C. A.A. 5997 (Colombia); Roa-Rojas, J., E-mail: jroar@unal.edu.co [Grupo de Fisica de Nuevos Materiales (GFNM), Departamento de Fisica, Universidad Nacional de Colombia, Bogota D.C. A.A. 5997 (Colombia)

    2012-03-05

    phase transition toward monoclinic phase P2{sub 1}/n (no 14). The activation energy E{sub a} is close to E{sub a} = 39.6 kJ/mol. Suggesting that during the sintering process of the Sr{sub 2}EuRuO{sub 6} is delivering oxygen species that should in fact lower the activation energy E{sub a} of the compound. Semi-quantitative compositional study was carried out from energy dispersive X-ray (EDX) experiments in order to obtain the independent elements percentage of the Sr{sub 2}EuRuO{sub 6} complex perovskite.

  4. Effects of the co-addition of LiSbO3-LiTaO3 on the densification of (Na1/2K1/2)NbO3 lead free ceramics by atmosphere sintering

    International Nuclear Information System (INIS)

    Jiang Na; Fang Bijun; Wu Jian; Du Qingbo

    2011-01-01

    Research highlights: → This manuscript shows a synthesis method that can easily obtain excellent lead-free samples, which is valuable for industrial production. → Pure phase perovskite 0.94(Na 1/2 K 1/2 )NbO 3 -0.03LiSbO 3 -0.03LiTaO 3 (0.94NKN-0.03LS-0.03LT) lead-free piezoelectric ceramics with high relative density, being 94.73%, and excellent integral electrical properties, piezoelectric constant d 33 being 228 pC/N, were prepared by atmosphere sintering method. Which can be attributed to the co-doping of LiSbO 3 -LiTaO 3 . - Abstract: Pure phase perovskite 0.94(Na 1/2 K 1/2 )NbO 3 -0.03LiSbO 3 -0.03LiTaO 3 (0.94NKN-0.03LS-0.03LT) lead-free piezoelectric ceramics were prepared by the conventional solid-state reaction method. Due to the co-addition of LiSbO 3 -LiTaO 3 , the 0.94NKN-0.03LS-0.03LT ceramics prepared by atmosphere sintering at 1040 deg. C exhibit high relative density, being 94.73%, and rather homogenous microstructure. X-ray diffraction (XRD) measurement confirmed that the sintered ceramics exhibit pure tetragonal perovskite structure. The 0.94NKN-0.03LS-0.03LT ceramics exhibit excellent integral electrical properties, in which the value of piezoelectric constant d 33 is 228 pC/N, the electromechanical coupling factors K p and K t are 0.220 and 0.230, respectively, the mechanical quality factor Q m is 32.19, and the remnant polarization P r is 23.06 μC/cm 2 . Such excellent electrical properties are considered as correlating with the high relative density of the synthesized ceramics induced by the co-doping of LiSbO 3 -LiTaO 3 .

  5. Microstructure and thermoelectric properties of doped p-type CoSb3 under TGZM effect

    Science.gov (United States)

    Wang, Hongqiang; Li, Shuangming; Li, Xin; Zhong, Hong

    2017-05-01

    The Co-96.9 wt% Sb hypoeutectic alloy doped by 0.12 wt% YbFe was solidified in a Bridgman-type furnace based on temperature gradient zone melting (TGZM) effect. A mushy zone was observed between the complete liquid zone and the solid zone at different thermal stabilization time ranging from 15 min to 40 h. The mushy-zone solidified microstructures of the alloy only consist of CoSb3 and Sb phase. After 40 h thermal stabilization time, the volume fraction of CoSb3 in the mushy zone increases significantly up to 99.6% close to the solid-liquid interface. The hardness and fracture toughness of doped CoSb3 can reach 7.01 ± 0.69 GPa and 0.78 ± 0.08 MPa·m1/2, respectively. Meanwhile, the thermoelectric properties of the alloy were measured ranging from room temperature (RT) to 850 K. The Seebeck coefficient of the specimen prepared by TGZM effect after 40 h could reach 155 μV/K and the ZT value is 0.47 at 660 K, showing that it is feasible to prepare CoSb3 bulk material via TGZM effect. As a simple and one-step solidification method, the TGZM technique could be applied in the preparation of skutterudite compounds.

  6. Phase Stability and Electronic Structure of Prospective Sb-Based Mixed Sulfide and Iodide 3D Perovskite (CH3NH3)SbSI2.

    Science.gov (United States)

    Li, Tianyang; Wang, Xiaoming; Yan, Yanfa; Mitzi, David B

    2018-06-29

    Lead-free antimony-based mixed sulfide and iodide perovskite phases have recently been reported to be synthesized experimentally and to exhibit reasonable photovoltaic performance. Through a combination of experimental validation and computational analysis, we show no evidence of the formation of the mixed sulfide and iodide perovskite phase, MASbSI 2 (MA = CH 3 NH 3 + ), and instead that the main products are a mixture of the binary and ternary compounds (Sb 2 S 3 and MA 3 Sb 2 I 9 ). Density functional theory calculations also indicate that such a mixed sulfide and iodide perovskite phase should be thermodynamically less stable compared with binary/ternary anion-segregated secondary phases and less likely to be synthesized under equilibrium conditions. Additionally, band structure calculations show that this mixed sulfide and iodide phase, if possible to synthesize (e.g., under nonequilibrium conditions), should have a suitable direct band gap for photovoltaic application.

  7. The SbMT-2 gene from a halophyte confers abiotic stress tolerance and modulates ROS scavenging in transgenic tobacco.

    Directory of Open Access Journals (Sweden)

    Amit Kumar Chaturvedi

    Full Text Available Heavy metals are common pollutants of the coastal saline area and Salicornia brachiata an extreme halophyte is frequently exposed to various abiotic stresses including heavy metals. The SbMT-2 gene was cloned and transformed to tobacco for the functional validation. Transgenic tobacco lines (L2, L4, L6 and L13 showed significantly enhanced salt (NaCl, osmotic (PEG and metals (Zn++, Cu++ and Cd++ tolerance compared to WT plants. Transgenic lines did not show any morphological variation and had enhanced growth parameters viz. shoot length, root length, fresh weight and dry weight. High seed germination percentage, chlorophyll content, relative water content, electrolytic leakage and membrane stability index confirmed that transgenic lines performed better under salt (NaCl, osmotic (PEG and metals (Zn++, Cu++ and Cd++ stress conditions compared to WT plants. Proline, H2O2 and lipid peroxidation (MDA analyses suggested the role of SbMT-2 in cellular homeostasis and H2O2 detoxification. Furthermore in vivo localization of H2O2 and O2-; and elevated expression of key antioxidant enzyme encoding genes, SOD, POD and APX evident the possible role of SbMT-2 in ROS scavenging/detoxification mechanism. Transgenic lines showed accumulation of Cu++ and Cd++ in root while Zn++ in stem under stress condition. Under control (unstressed condition, Zn++ was accumulated more in root but accumulation of Zn++ in stem under stress condition suggested that SbMT-2 may involve in the selective translocation of Zn++ from root to stem. This observation was further supported by the up-regulation of zinc transporter encoding genes NtZIP1 and NtHMA-A under metal ion stress condition. The study suggested that SbMT-2 modulates ROS scavenging and is a potential candidate to be used for phytoremediation and imparting stress tolerance.

  8. The SbMT-2 gene from a halophyte confers abiotic stress tolerance and modulates ROS scavenging in transgenic tobacco.

    Science.gov (United States)

    Chaturvedi, Amit Kumar; Patel, Manish Kumar; Mishra, Avinash; Tiwari, Vivekanand; Jha, Bhavanath

    2014-01-01

    Heavy metals are common pollutants of the coastal saline area and Salicornia brachiata an extreme halophyte is frequently exposed to various abiotic stresses including heavy metals. The SbMT-2 gene was cloned and transformed to tobacco for the functional validation. Transgenic tobacco lines (L2, L4, L6 and L13) showed significantly enhanced salt (NaCl), osmotic (PEG) and metals (Zn++, Cu++ and Cd++) tolerance compared to WT plants. Transgenic lines did not show any morphological variation and had enhanced growth parameters viz. shoot length, root length, fresh weight and dry weight. High seed germination percentage, chlorophyll content, relative water content, electrolytic leakage and membrane stability index confirmed that transgenic lines performed better under salt (NaCl), osmotic (PEG) and metals (Zn++, Cu++ and Cd++) stress conditions compared to WT plants. Proline, H2O2 and lipid peroxidation (MDA) analyses suggested the role of SbMT-2 in cellular homeostasis and H2O2 detoxification. Furthermore in vivo localization of H2O2 and O2-; and elevated expression of key antioxidant enzyme encoding genes, SOD, POD and APX evident the possible role of SbMT-2 in ROS scavenging/detoxification mechanism. Transgenic lines showed accumulation of Cu++ and Cd++ in root while Zn++ in stem under stress condition. Under control (unstressed) condition, Zn++ was accumulated more in root but accumulation of Zn++ in stem under stress condition suggested that SbMT-2 may involve in the selective translocation of Zn++ from root to stem. This observation was further supported by the up-regulation of zinc transporter encoding genes NtZIP1 and NtHMA-A under metal ion stress condition. The study suggested that SbMT-2 modulates ROS scavenging and is a potential candidate to be used for phytoremediation and imparting stress tolerance.

  9. Effect of cerium oxide addition on electrical properties of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Ibrahim, D.M. [National Research Center, Dokki, Giza (Egypt). Dept. of Ceramics; Mounir, M. [Dept. of Physics, Cairo Univ., Giza (Egypt); Mahgoub, A.S. [Cairo Univ., Giza (Egypt). Dept. of Chemistry; Turky, G. [Dept. of Physics, National Research Center, Dokki, Giza (Egypt); El-Desouky, O.A. [Cer. Cleopatra Co., Ramadan City (Egypt)

    2002-07-01

    Mixtures of ZnO and Ce{sub 6} O{sub 11} as additive were prepared by solid state reaction from the calcined oxides with the following proportions: 0.03, 0.08, 0.1, 0.2 and 0.4 mole. Disc specimens 1.2 cm 5 cm in diameter and 0.3 cm thickness were processed under a force of 70 kN and fired at 1150 C/ 30 minutes. XRD revealed the presence of limited solid solution of cerium in ZnO, as evident from the shift in the peaks [0.03-0.04 A ] up to 0.1 mole addition and remains constant. SEM revealed the presence of inter-granular phase. EDAX showed it to be a mixture of ZnO and Ce{sub 6}O{sub 11}. Also cerium was detected in the ZnO grains confirming the XRD results. RCL circuit was used to measure the capacitance and resistance at different frequencies at room temperature. The dielectric constant and conductivity were calculated. The change in resistivity with temperature was followed up to 523 K. The change in dielectric strength with temperature at spot frequency of 10 kHz is demonstrated. The electrical conductivity was found to increase with the proportion of cerium oxide up to 0.2 mole then decreased. (orig.)

  10. Study On Nanohardness Of Phases Occurring In ZnAl22Cu3 And ZnAl40Cu3 Alloys

    Directory of Open Access Journals (Sweden)

    Michalik R.

    2015-06-01

    Full Text Available Zn-Al alloys are mainly used due to their high tribological and damping properties. A very important issue is determination of the hardness of the phases present in the Zn-Al-Cu alloys. Unfortunately, in literature there is lack of studies on the hardness of the phases present in the alloys Zn-Al-Cu. The aim of this research was to determine the hardness of the phases present in the ZnAl22Cu3Si and ZnAl40Cu3Si alloys. The scope of the research included examination of the structure, chemical composition of selected micro-regions and hardness of phases present in the examined alloys. The research carried out has shown, that CuZn4 phase is characterized by a similar hardness as the hardness of the interdendritic areas. The phases present in the structure of ZnAl40Cu3 and ZnAl22Cu3 alloys after soaking at the temperature of 185 °C are characterized by lower hardness than the phase present in the structure of the as-cast alloys.

  11. Crystal structure and magnetic properties of Tb6FeSb2

    International Nuclear Information System (INIS)

    Cai Gemei; Zhang Jiliang; He Wei; Qin Pingli; Zeng Lingmin

    2006-01-01

    The crystal structure and magnetic properties of Tb 6 FeSb 2 has been investigated for the first time. The compound crystallizes in the hexagonal, space group P6-bar 2m (No. 189) with the Ho 6 FeSb 2 structure type and lattice parameters a=8.1942(5)A, c=4.1758(3)A, z=1 and D calc =8.564g/cm 3 . Its magnetic properties were measured between 85 and 420K. The Curie temperature T c =256K was obtained using the method of intersecting tangents, and the effective paramagnetic moment was μ eff =9.32μ B per Tb atom

  12. Magnetoelectric and transport properties of (GaMn)Sb thin films: A ferrimagnetic phase in dilute alloys

    Energy Technology Data Exchange (ETDEWEB)

    Calderón, Jorge A. [Universidad Nacional de Colombia – Bogotá, Dpto. de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Cra. 30 No. 45-03 Edificio 404 Lab. 121C Ciudad Universitaria, Bogotá (Colombia); Mesa, F., E-mail: fredy.mesa@urosario.edu.co [Grupo NanoTech, Facultad de Ciencias Naturales y Matemáticas, Universidad del Rosario, Cra. 24 No. 63C-69, Bogotá (Colombia); Dussan, A. [Universidad Nacional de Colombia – Bogotá, Dpto. de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Cra. 30 No. 45-03 Edificio 404 Lab. 121C Ciudad Universitaria, Bogotá (Colombia)

    2017-02-28

    Highlights: • (GaMn)Sb thin films were fabricated using the direct current (DC) magnetron co-sputtering. • Presence of ferrimagnetic (Mn{sub 2}Sb) and ferromagnetic (Mn{sub 2}Sb{sub 2}) phases. • A minor difference of 1% was found with respect to percolation theory, which confirmed the validity of the diffusional model in semiconductor alloys with magnetic properties. • Increase in the localized states density (N{sub F}) with increasing substrate temperature. - Abstract: We studied the electrical, magnetic, and transport properties of (GaMn)Sb thin films fabricated by the direct current magnetron co-sputtering method. Using X-ray powder diffraction measurements, we identified the presence of ferrimagnetic (Mn{sub 2}Sb) and ferromagnetic (Mn{sub 2}Sb{sub 2}) phases within the films. We also measured the magnetization of the films versus an applied magnetic field as well as their hysteresis curves at room temperature. We determined the electrical and transport properties of the films through temperature-dependent resistivity measurements using the Van Der Pauw method. The main contribution to the transport process was variable range hopping. Hopping parameters were calculated using percolation theory and refined using the diffusional model. In addition, we determined that all samples had p type semiconductor behavior, that there was an increase in the density of localized states near the Fermi level, and that the binary magnetic phases influenced the electrical properties and transport mechanisms.

  13. Preparation and chemical properties of the skutterudites (Ce-Yb) yFe4-x(Co/Ni) xSb12

    International Nuclear Information System (INIS)

    Berardan, D.; Alleno, E.; Godart, C.; Rouleau, O.; Rodriguez-Carvajal, J.

    2005-01-01

    The double-filled skutterudites Ce y/2 Yb y/2 Fe 4-x Co x Sb 12 and Ce y/2 Yb y/2 Fe 4-x Ni x Sb 12 have been synthesized as single phase materials. The evolution of the lattice parameters and of the filling fractions with substitutions on the transition metal site have been studied by X-ray diffraction and electron probe microanalysis, respectively. Both results were compared to that of single filled series (Ce/Yb) y Fe 4-x (Co/Ni) x Sb 12 . It shows that double-filled skutterudites can be understood as a solid solution between single filled ones. The valence states of Ce and Yb in all series have been studied using X-ray absorption spectroscopy at the L 3 edges, and we discuss their relationships with structural parameters. Ce is always trivalent, whereas Yb valence state decreases as Yb fraction increases. No distortion of the environment or sub-position of Yb in the cage have been seen by neutron diffraction. The Seebeck coefficient has been measured using a home made apparatus from 120 K to 300 K. It shows a crossover from p- to n-type conductivity for Co or Ni rich skutterudites in the six series. We discuss the influence on the room temperature thermopower of valence states, filling fractions and substitution rate on the transition metal site. Thermopower seems to be only driven by charge carriers concentration

  14. Phase transformation from cubic ZnS to hexagonal ZnO by thermal annealing

    Science.gov (United States)

    Mahmood, K.; Asghar, M.; Amin, N.; Ali, Adnan

    2015-03-01

    We have investigated the mechanism of phase transformation from ZnS to hexagonal ZnO by high-temperature thermal annealing. The ZnS thin films were grown on Si (001) substrate by thermal evaporation system using ZnS powder as source material. The grown films were annealed at different temperatures and characterized by X-ray diffraction (XRD), photoluminescence (PL), four-point probe, scanning electron microscope (SEM) and energy dispersive X-ray diffraction (EDX). The results demonstrated that as-deposited ZnS film has mixed phases but high-temperature annealing leads to transition from ZnS to ZnO. The observed result can be explained as a two-step process: (1) high-energy O atoms replaced S atoms in lattice during annealing process, and (2) S atoms diffused into substrate and/or diffused out of the sample. The dissociation energy of ZnS calculated from the Arrhenius plot of 1000/T versus log (resistivity) was found to be 3.1 eV. PL spectra of as-grown sample exhibits a characteristic green emission at 2.4 eV of ZnS but annealed samples consist of band-to-band and defect emission of ZnO at 3.29 eV and 2.5 eV respectively. SEM and EDX measurements were additionally performed to strengthen the argument.

  15. Mechanism of Pb and Sb role on the 2223 phase of BSCCO system superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Sukirman, E; Sulisworo, P; Prasuad, W; Wuryanto, [Material Science Research Centre, National Atomic Energy Agency, Kawasan Puspiptek Serpong Tangerang (Indonesia)

    1998-10-01

    The mechanism of Pb and Sb role on the 2223 phase of Bi-Sr-Ca-Cu-O (BSCCO) system superconductor has been investigated. The 2223 phase samples without doping and with doping: Pb, and Sb have been synthesized by solid state reaction method. The samples characterization have been carried out through a susceptibility-, resistivity-, neutron diffraction profile-, and microstructure measurements. Crystal structure of the samples have been analyzed using RIETAN software. The analysis results show that relative content of the 2223 phase increase from 28% in the non-doped sample (TDP) to 75% in Pb-doped (DPB) and 44% in Sb-doped (DSB) samples. When, Pb, or Sb enter into the 2223 phase crystal system, then the oxygen atoms on SrO layers shift toward the copper atoms position on Cu(2)O{sub 2} layers as far as 0.1(1) and 0.1(1) A in DPB, and DSB, respectively. BiO layers shift away from SrO layers as far as 0.3(1) and 0.1(1) A in DPB, and DSB, respectively. The critical current density Jc increase from 3 A/cm{sup 2} in TDP to 210 and 35 A/cm{sup 2} in DPB, and DSB, respectively. The onset point of Tc also increase from 99 K in TDP to 103 and 107 K in DPB and DSB, respectively. It is concluded that the enhancement of the 2223 phase, Jc and onset point are due to improvement on the structure stability, improvement on the connection between unit-cells, and shortening the apical oxygen-Cu chains, respectively. (author)

  16. Oxygen-doped Sb{sub 4}Te phase change films for high-temperature data retention and low-power application

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yifeng [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China); School of Mathematics and Physics, Jiangsu Teachers University of Technology, Changzhou 213001 (China); Sun, Mingcheng [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China)

    2013-02-25

    Highlights: Black-Right-Pointing-Pointer O-doped Sb{sub 4}Te phase-change films were reported. Black-Right-Pointing-Pointer The amorphous-to-crystalline transitions of O-doped Sb{sub 4}Te films were studied. Black-Right-Pointing-Pointer By doping oxygen, the stability of Sb{sub 4}Te films is improved greatly. Black-Right-Pointing-Pointer The resistance of the Sb{sub 4}Te films increases by doping oxygen. - Abstract: The amorphous-to-crystalline transitions of oxygen-doped Sb{sub 4}Te (STO) films are investigated by in situ film resistance measurements. The crystalline temperature and resistance of the oxygen-doped films increase. The analysis of X-ray diffractomer (XRD) and X-ray photoelectron spectroscopy (XPS) indicate that the films with doping of a small amount of oxygen atoms can refine the grain size and form oxide, improving the resistance and thermal stability of phase change films. Excessive oxygen in Sb{sub 4}Te will make Te separate, resulting in deteriorating the stability. As a result, STO2 film has the relatively high activation energy for crystallization. The 10-year lifetime is raised from 29 Degree-Sign C of undoped Sb{sub 4}Te film to 102 Degree-Sign C of STO3 film. Phase transition from amorphous state to crystalline state is observed at relatively lower power, compared with a device using Ge{sub 2}Sb{sub 2}Te{sub 5} film.

  17. Field-orientation dependence of the specific heat of PrOs4Sb12

    International Nuclear Information System (INIS)

    Custers, Jeroen; Namai, Yukie; Tayama, Takashi; Sakakibara, Toshiro; Sugawara, Hitoshi; Aoki, Yuji; Sato, Hideyuki

    2006-01-01

    The superconducting (SC) gap of the Pr-based skutterudite PrOs 4 Sb 12 has been investigated by means of field-angle-dependent specific heat C(H,φ) experiments. At fixed temperatures, H was varied and rotated in the basal planes. A 4-fold oscillation of C(H,φ) is observed in the entire H-T SC phase diagram. The minima are located along the [100] directions suggesting the excistence of gap nodes or minima along these directions. The oscillation amplitude vertical bar A vertical bar becomes maximum at H/H c2 ∼0.3. Below, vertical bar A vertical bar->0. The temperature variation of vertical bar A vertical bar follows a quadratic dependence

  18. 600 °C isothermal section of the Al–Cr–Zn ternary phase diagram

    Energy Technology Data Exchange (ETDEWEB)

    He, Zuxin [School of Materials Science and Engineering, Changzhou University, 213164 Jiangsu (China); Jiangsu Key Laboratory of Material Surface Science and Technology, Changzhou University, 213164 Jiangsu (China); Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, 213164 Jiangsu (China); Su, Xuping, E-mail: sxping@cczu.edu.cn [School of Materials Science and Engineering, Changzhou University, 213164 Jiangsu (China); Jiangsu Key Laboratory of Material Surface Science and Technology, Changzhou University, 213164 Jiangsu (China); Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, 213164 Jiangsu (China); Peng, Haoping; Liu, Ya; Wu, Changjun; Wang, Jianhua [School of Materials Science and Engineering, Changzhou University, 213164 Jiangsu (China); Jiangsu Key Laboratory of Material Surface Science and Technology, Changzhou University, 213164 Jiangsu (China)

    2015-11-15

    600 °C isothermal section of the Al–Cr–Zn system has been determined by Scanning Electron Microscopy-Energy Dispersive X-ray spectrometry (SEM-EDS), and X-ray Diffraction (XRD). Eleven three-phase regions have been identified experimentally at 600 °C. The τ{sub 3} and τ{sub 4} ternary compounds were identified in this isothermal section and the crystal structures of both phases are cubic. The lattice parameters of τ{sub 3} and τ{sub 4} are a = 2.1536 nm and a = 1.8323 nm, respectively. The formerly reported τ{sub 1} phase was not found. The formerly reported τ{sub 2} phase is an extension of Al{sub 7}Cr. The highest Zn content in γ{sub 2} and ν phases is 7.1 at at.% and 6.7 at.%, respectively. The Zn solubility in Al{sub 7}Cr phase can be up to 10.4 at.%, while that in Al{sub 4}Cr phase is less than 4 at.%. The clearly phase relation of the Al–Cr–Zn system can lead us to better understand the effect of Cr on the corrosion behavior of metals in the Zn–Al bath and the Hot-dip galvanizing process. - Highlights: • Isothermal section of the Al–Cr–Zn system at 600 °C was determined. • Eleven three-phase regions were identified experimentally at 600 °C. • Existence of the γ{sub 2} and ν phases was confirmed at 600 °C. • X-ray diffraction patterns of the ternary phases τ{sub 3} and τ{sub 4} were proposed for the first time.

  19. Thermodynamic assessment of the Pr-Zn binary system

    International Nuclear Information System (INIS)

    Huang, X.M.; Liu, L.B.; Zhang, L.G.; Jia, B.R.; Jin, Z.P.; Zheng, F.

    2008-01-01

    On the basis of available experimental data of phase diagram and thermodynamic properties, the Pr-Zn binary system has been optimized using the CALPHAD approach. The phases, including liquid and bcc A 2(βPr) were treated as substitutional solutions, while the intermetallic compounds, including PrZn, PrZn 2 , PrZn 3 , Pr 3 Zn 11 , Pr 13 Zn 58 , Pr 3 Zn 22 , Pr 2 Zn 17 and PrZn 11 were modeled as stoichiometric compounds. As the result of optimization, a set of self-consistent thermodynamic parameters has been obtained, which can be used to reproduce the reported experimental data

  20. Tuning Eu"3"+ emission in europium sesquioxide films by changing the crystalline phase

    International Nuclear Information System (INIS)

    Mariscal, A.; Quesada, A.; Camps, I.; Palomares, F.J.; Fernández, J.F.; Serna, R.

    2016-01-01

    Highlights: • PLD production of high quality europium sesquioxide (Eu_2O_3) films. • The deposition of Al_2O_3 capping and/or buffer layers modifies the crystallization for Eu_2O_3 films upon annealing. • The formation of cubic or monoclinic phases can be favored. • Eu"3"+ emission tuning is achieved as a consequence of crystal field effects. - Abstract: We report the growth of europium sesquioxide (Eu_2O_3) thin films by pulsed laser deposition (PLD) in vacuum at room temperature from a pure Eu_2O_3 ceramic bulk target. The films were deposited in different configurations formed by adding capping and/or buffer layers of amorphous aluminum oxide (a-Al_2O_3). The optical properties, refractive index and extinction coefficient of the as deposited Eu_2O_3 layers were obtained. X-ray photoelectron spectroscopy (XPS) measurements were done to assess its chemical composition. Post-deposition annealing was performed at 500 °C and 850 °C in air in order to achieve the formation of crystalline films and to accomplish photoluminescence emission. According to the analysis of X-ray diffraction (XRD) spectra, cubic and monoclinic phases were formed. It is found that the relative amount of the phases is related to the different film configurations, showing that the control over the crystallization phase can be realized by adequately designing the structures. All the films showed photoluminescence emission peaks (under excitation at 355 nm) that are attributed to the intra 4f-transitions of Eu"3"+ ions. The emission spectral shape depends on the crystalline phase of the Eu_2O_3 layer. Specifically, changes in the hypersensitive "5D_0 → "7F_2 emission confirm the strong influence of the crystal field effect on the Eu"3"+ energy levels.