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Sample records for zinc sulfide films

  1. Effect of ambient hydrogen sulfide on the physical properties of vacuum evaporated thin films of zinc sulfide

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Beer Pal [Department of Physics, C.C.S. University, Meerut 250004 (India)], E-mail: drbeerpal@gmail.com; Singh, Virendra [Forensic Science Laboratory, Malviya Nagar, New Delhi 110017 (India); Tyagi, R.C.; Sharma, T.P. [Department of Physics, C.C.S. University, Meerut 250004 (India)

    2008-02-15

    Evaporated thin films of zinc sulfide (ZnS) have been deposited in a low ambient atmosphere of hydrogen sulfide (H{sub 2}S {approx}10{sup -4} Torr). The H{sub 2}S atmosphere was obtained by a controlled thermal decomposition of thiourea [CS(NH{sub 2}){sub 2}] inside the vacuum chamber. It has been observed that at elevated substrates temperature of about 200 deg. C helps eject any sulfur atoms deposited due to thermal decomposition of ZnS during evaporation. The zinc ions promptly recombine with H{sub 2}S to give better stoichiometry of the deposited films. Optical spectroscopy, X-ray diffraction patterns and scanning electron micrographs depict the better crystallites and uniformity of films deposited by this technique. These deposited films were found to be more adherent to the substrates and are pinhole free, which is a very vital factor in device fabrication.

  2. Copper zinc tin sulfide-based thin film solar cells

    CERN Document Server

    Ito, Kentaro

    2014-01-01

    Beginning with an overview and historical background of Copper Zinc Tin Sulphide (CZTS) technology, subsequent chapters cover properties of CZTS thin films, different preparation methods of CZTS thin films, a comparative study of CZTS and CIGS solar cell, computational approach, and future applications of CZTS thin film solar modules to both ground-mount and rooftop installation. The semiconducting compound (CZTS) is made up earth-abundant, low-cost and non-toxic elements, which make it an ideal candidate to replace Cu(In,Ga)Se2 (CIGS) and CdTe solar cells which face material scarcity and tox

  3. Zinc sulfide thin films deposited by RF reactive sputtering for photovoltaic applications

    International Nuclear Information System (INIS)

    Shao Lexi; Chang, K.-H.; Hwang, H.-L.

    2003-01-01

    Zinc sulfide (ZnS) thin films with nano-scale grains of about 50 nm were deposited on glass substrates at a substrate temperature of 200 deg. C via RF reactive sputtering by using zinc plate target and hydrogen sulfide gas. The structure, compositions, electrical and optical characteristics of the deposited films were investigated for the photovoltaic device applications. All films showed a near stoichiometric composition as indicated in their AES data. Distinct single crystalline phase with preferential orientation along the (0 0 0 1) plane of wurtzite or the (1 1 1) plane of zinc blende (ZB) was revealed in their X-ray diffraction (XRD) patterns, and the spacing of the planes are well matched to those of (1 1 2) plane of the chalcopyrite CuInS 2 (CIS). UV-Vis measurement showed that the films had more than 65% transmittance in the wavelength larger than 350 nm, and the fundamental absorption edge shifted to shorter wavelength with the increase of sulfur incorporated in the films, which corresponds to an increase in the energy band gap ranging from 3.59 to 3.72 eV. It was found that ZnS films are suitable for use as the buffer layer of the CIS solar cells, and it is the viable alternative for replacing CdS in the photovoltaic cell structure

  4. Processing of Copper Zinc Tin Sulfide Nanocrystal Dispersions for Thin Film Solar Cells

    Science.gov (United States)

    Williams, Bryce Arthur

    A scalable and inexpensive renewable energy source is needed to meet the expected increase in electricity demand throughout the developed and developing world in the next 15 years without contributing further to global warming through CO2 emissions. Photovoltaics may meet this need but current technologies are less than ideal requiring complex manufacturing processes and/or use of toxic, rare-earth materials. Copper zinc tin sulfide (Cu 2ZnSnS4, CZTS) solar cells offer a true "green" alternative based upon non-toxic and abundant elements. Solution-based processes utilizing CZTS nanocrystal dispersions followed by high temperature annealing have received significant research attention due to their compatibility with traditional roll-to-roll coating processes. In this work, CZTS nanocrystal (5-35 nm diameters) dispersions were utilized as a production pathway to form solar absorber layers. Aerosol-based coating methods (aerosol jet printing and ultrasonic spray coating) were optimized for formation of dense, crack-free CZTS nanocrystal coatings. The primary variables underlying determination of coating morphology within the aerosol-coating parameter space were investigated. It was found that the liquid content of the aerosol droplets at the time of substrate impingement play a critical role. Evaporation of the liquid from the aerosol droplets during coating was altered through changes to coating parameters as well as to the CZTS nanocrystal dispersions. In addition, factors influencing conversion of CZTS nanocrystal coatings into dense, large-grained polycrystalline films suitable for solar cell development during thermal annealing were studied. The roles nanocrystal size, carbon content, sodium uptake, and sulfur pressure were found to have pivotal roles in film microstructure evolution. The effects of these parameters on film morphology, grain growth rates, and chemical makeup were analyzed from electron microscopy images as well as compositional analysis

  5. Electrochemical deposition of iron sulfide thin films and heterojunction diodes with zinc oxide

    Directory of Open Access Journals (Sweden)

    Shoichi Kawai

    2014-03-01

    Full Text Available Iron sulfide thin films were fabricated by the electrochemical deposition method from an aqueous solution containing FeSO4 and Na2S2O3. The composition ratio obtained was Fe:S:O = 36:56:8. In the photoelectrochemical measurement, a weak negative photo-current was observed for the iron sulfide films, which indicates that its conduction type is p-type. No peaks were observed in X-ray diffraction pattern, and thus the deposited films were considered to be amorphous. For a heterojunction with ZnO, rectification properties were confirmed in the current-voltage characteristics. Moreover, the current was clearly enhanced under AM1.5 illumination.

  6. Synthesis And Characterization of Copper Zinc Tin Sulfide Nanoparticles And Thin Films

    Science.gov (United States)

    Khare, Ankur

    Copper zinc tin sulfide (Cu2ZnSnS4, or CZTS) is emerging as an alternative material to the present thin film solar cell technologies such as Cu(In,Ga)Se2 and CdTe. All the elements in CZTS are abundant, environmentally benign, and inexpensive. In addition, CZTS has a band gap of ˜1.5 eV, the ideal value for converting the maximum amount of energy from the solar spectrum into electricity. CZTS has a high absorption coefficient (>104 cm-1 in the visible region of the electromagnetic spectrum) and only a few micron thick layer of CZTS can absorb all the photons with energies above its band gap. CZT(S,Se) solar cells have already reached power conversion efficiencies >10%. One of the ways to improve upon the CZTS power conversion efficiency is by using CZTS quantum dots as the photoactive material, which can potentially achieve efficiencies greater than the present thin film technologies at a fraction of the cost. However, two requirements for quantum-dot solar cells have yet to be demonstrated. First, no report has shown quantum confinement in CZTS nanocrystals. Second, the syntheses to date have not provided a range of nanocrystal sizes, which is necessary not only for fundamental studies but also for multijunction photovoltaic architectures. We resolved these two issues by demonstrating a simple synthesis of CZTS, Cu2SnS3, and alloyed (Cu2SnS3) x(ZnS)y nanocrystals with diameters ranging from 2 to 7 nm from diethyldithiocarbamate complexes. As-synthesized nanocrystals were characterized using high resolution transmission electron microscopy, X-ray diffraction, Raman spectroscopy, and energy dispersive spectroscopy to confirm their phase purity. Nanocrystals of diameter less than 5 nm were found to exhibit a shift in their optical absorption spectra towards higher energy consistent with quantum confinement and previous theoretical predictions. Thin films from CZTS nanocrystals deposited on Mo-coated quartz substrates using drop casting were found to be continuous

  7. Effect of substrate baking temperature on zinc sulfide and germanium thin films optical parameters

    Science.gov (United States)

    Liu, Fang; Gao, Jiaobo; Yang, Chongmin; Zhang, Jianfu; Liu, Yongqiang; Liu, Qinglong; Wang, Songlin; Mi, Gaoyuan; Wang, Huina

    2016-10-01

    ZnS and Ge are very normal optical thin film materials in Infrared wave. Studying the influence of different substrate baking temperature to refractive index and actual deposition rates is very important to promote optical thin film quality. In the same vacuum level, monitoring thickness and evaporation rate, we use hot evaporation to deposit ZnS thin film materials and use ion-assisted electron beam to deposit Ge thin film materials with different baking temperature. We measure the spectral transmittance with the spectrophotometer and calculate the actual deposition rates and the refractive index in different temperature. With the higher and higher temperature in a particular range, ZnS and Ge refractive index become higher and actual deposition rates become smaller. The refractive index of Ge film material change with baking temperature is more sensitive than ZnS. However, ZnS film actual deposition rates change with baking temperature is more sensitive than Ge.

  8. A study of the optical properties and adhesion of zinc sulfide anti-reflection thin film coated on a germanium substrate

    Energy Technology Data Exchange (ETDEWEB)

    Firoozifar, S.A.R. [Atomic and Molecular Group, Faculty of Physics, Yazd University, Yazd (Iran, Islamic Republic of); Behjat, A., E-mail: abehjat@yazduni.ac.ir [Atomic and Molecular Group, Faculty of Physics, Yazd University, Yazd (Iran, Islamic Republic of); Photonics Research Group, Engineering Research Center, Yazd University, Yazd (Iran, Islamic Republic of); Kadivar, E. [Physics Department, Persian Gulf University, Bushehr (Iran, Islamic Republic of); Ghorashi, S.M.B.; Zarandi, M. Borhani [Atomic and Molecular Group, Faculty of Physics, Yazd University, Yazd (Iran, Islamic Republic of)

    2011-11-01

    To conduct this study, zinc sulfide (ZnS) thin films deposited on germanium (Ge) substrates were prepared by an evaporation method. The effects of deposition rate and annealing on the optical properties and adhesion of the ZnS thin films were investigated. The transmission intensity and the X-ray diffraction (XRD) pattern of the samples showed that the transmittance of the samples decreases by increasing the evaporation rates. However, with the increase of the annealing temperature, crystallinity of the thin films improves which, in turn, results in the enhancement of the transmission intensity in a far infrared region. The maximum grain size was obtained at the annealing temperature of 225 deg. C. Our experimental results also show that evaporation rate and annealing influences the adhesion of ZnS thin films to Ge substrates.

  9. Synthesis of zinc sulfide by chemical vapor deposition using an organometallic precursor: Di-tertiary-butyl-disulfide

    International Nuclear Information System (INIS)

    Vasekar, Parag; Dhakal, Tara; Ganta, Lakshmikanth; Vanhart, Daniel; Desu, Seshu

    2012-01-01

    Zinc sulfide has gained popularity in the last few years as a cadmium-free heterojunction partner for thin film solar cells and is seen as a good replacement for cadmium sulfide due to better blue photon response and non-toxicity. In this work, zinc sulfide films are prepared using an organic sulfur source. We report a simple and repeatable process for development of zinc sulfide using a cost-effective and less hazardous organic sulfur source. The development of zinc sulfide has been studied on zinc oxide-coated glass where the zinc oxide is converted into zinc sulfide. Zinc oxide grown by atomic layer deposition as well as commercially available zinc oxide-coated glass was used. The zinc sulfide synthesis has been studied and the films are characterized using scanning electron microscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and a UV–VIS spectrophotometer. XRD, XPS and optical characterization confirm the zinc sulfide phase formation. - Highlights: ► Synthesis of ZnS using a less-hazardous precursor, di-tertiary-butyl-disulfide. ► ZnS process optimized for two types of ZnO films. ► Preliminary results for a solar cell show an efficiency of 1.09%.

  10. Reduced Graphene Oxide-Cadmium Zinc Sulfide Nanocomposite with Controlled Band Gap for Large-Area Thin-Film Optoelectronic Device Application

    Science.gov (United States)

    Ibrahim, Sk; Chakraborty, Koushik; Pal, Tanusri; Ghosh, Surajit

    2017-12-01

    Herein, we report the one pot single step solvothermal synthesis of reduced grapheme oxide-cadmium zinc sulfide (RGO-Cd0.5Zn0.5S) composite. The reduction in graphene oxide (GO), synthesis of Cd0.5Zn0.5S (mentioned as CdZnS in the text) nanorod and decoration of CdZnS nanorods onto RGO sheet were done simultaneously. The structural, morphological and optical properties were studied thoroughly by different techniques, such as XRD, TEM, UV-Vis and PL. The PL intensity of CdZnS nanorods quenches significantly after the attachment of RGO, which confirms photoinduced charge transformation from CdZnS nanorods to RGO sheet through the interface of RGO-CdZnS. An excellent photocurrent generation in RGO-CdZnS thin-film device has been observed under simulated solar light irradiation. The photocurrent as well as photosensitivity increases linearly with the solar light intensity for all the composites. Our study establishes that the synergistic effect of RGO and CdZnS in the composite is capable of getting promising applications in the field of optoelectronic devising.

  11. Application of CBD-Zinc Sulfide Film as an Antireflection Coating on Very Large Area Multicrystalline Silicon Solar Cell

    OpenAIRE

    U. Gangopadhyay; K. Kim; S. K. Dhungel; H. Saha; J. Yi

    2007-01-01

    The low-cost chemical bath deposition (CBD) technique is used to prepare CBD-ZnS films as antireflective (AR) coating for multicrystalline silicon solar cells. The uniformity of CBD-ZnS film on large area of textured multicrystalline silicon surface is the major challenge of CBD technique. In the present work, attempts have been made for the first time to improve the rate of deposition and uniformity of deposited film by controlling film stoichiometry and refractive index and also to minimize...

  12. Application of CBD-Zinc Sulfide Film as an Antireflection Coating on Very Large Area Multicrystalline Silicon Solar Cell

    Directory of Open Access Journals (Sweden)

    U. Gangopadhyay

    2007-01-01

    Full Text Available The low-cost chemical bath deposition (CBD technique is used to prepare CBD-ZnS films as antireflective (AR coating for multicrystalline silicon solar cells. The uniformity of CBD-ZnS film on large area of textured multicrystalline silicon surface is the major challenge of CBD technique. In the present work, attempts have been made for the first time to improve the rate of deposition and uniformity of deposited film by controlling film stoichiometry and refractive index and also to minimize reflection loss by proper optimization of molar percentage of different chemical constituents and deposition conditions. Reasonable values of film deposition rate (12.13 Å′/min., good film uniformity (standard deviation <1, and refractive index (2.35 along with a low percentage of average reflection (6-7% on a textured mc-Si surface are achieved with proper optimization of ZnS bath. 12.24% efficiency on large area (125 mm × 125 mm multicrystalline silicon solar cells with CBD-ZnS antireflection coating has been successfully fabricated. The viability of low-cost CBD-ZnS antireflection coating on large area multicrystalline silicon solar cell in the industrial production level is emphasized.

  13. Pulsed Laser Deposition of Zinc Sulfide Thin Films on Silicon: The influence of substrate orientation and preparation on thin film morphology and texture

    OpenAIRE

    Heimdal, Carl Philip J

    2014-01-01

    The effect of orientation and preparation of silicon substrates on the growth morphology and crystalline structure of ZnS thin films deposited by pulsed laser deposition (PLD) has been investigated through scanning electron microscopy (SEM) and grazing incidence x-ray diffraction (GIXRD). ZnS thin films were grown on silicon (100) and (111), on HF-treated and untreated silicon (100) as well as substrates coated with Al, Ge and Au. The ZnS films showed entirely different morphologies for ZnS f...

  14. Remediation of arsenic and lead with nanocrystalline zinc sulfide.

    Science.gov (United States)

    Piquette, Alan; Cannon, Cody; Apblett, Allen W

    2012-07-27

    Nanocrystalline (1.7 ± 0.3 nm) zinc sulfide with a specific surface area up to 360 m(2) g(-1) was prepared from the thermal decomposition of a single-source precursor, zinc ethylxanthate. Zinc ethylxanthate decomposes to cubic zinc sulfide upon exposure to temperatures greater than or equal to 125 °C. The resulting zinc sulfide was tested as a water impurity extractant. The target impurities used in this study were As(5+), As(3+), and Pb(2+). The reaction of the nanocrystalline ZnS with Pb(2+) proceeds as a replacement reaction where solid PbS is formed and Zn(2+) is released into the aqueous system. Removal of lead to a level of less than two parts per billion is achievable. The results of a detailed kinetics experiment between the ZnS and Pb(2+) are included in this study. Unlike the instance of lead, both As(5+) and As(3+) adsorb on the surface of the ZnS extractant as opposed to an ion-exchange process. An uptake capacity of > 25 mg g(-1) for the removal of As(5+) is possible. The uptake of As(3+) appears to proceed by a slower process than that of the As(5+) with a capacity of nearly 20 mg g(-1). The nanocrystalline zinc sulfide was extremely successful for the removal of arsenic and lead from simulated oil sand tailing pond water.

  15. Sulfidation of zinc plating sludge with Na2S for zinc resource recovery

    International Nuclear Information System (INIS)

    Kuchar, D.; Fukuta, T.; Onyango, M.S.; Matsuda, H.

    2006-01-01

    A high amount of zinc disposed in the landfill sites as a mixed-metal plating sludge represents a valuable zinc source. To recover zinc from the plating sludge, a sulfidation treatment is proposed in this study, while it is assumed that ZnS formed could be separated by flotation. The sulfidation treatment was conducted by contacting simulated zinc plating sludge with Na 2 S solution at S 2- to Zn 2+ molar ratio of 1.5 for a period of 1-48 h, while changing the solid to liquid (S:L) ratio from 0.25:50 to 1.00:50. The conversion of zinc compounds to ZnS was determined based on the consumption of sulfide ions. The reaction products formed by the sulfidation of zinc were identified by X-ray diffraction (XRD). As a result, it was found that the conversion of zinc compounds to ZnS increased with an increase in S:L ratio. A maximum conversion of 0.809 was obtained at an S:L ratio of 1.00:50 after 48 h. However, when the zinc sludge treated at S:L ratio of 1.00:50 for 48 h was subjected to XRD analyses, only ZnS was identified in the treated zinc sludge. The result suggested that the rest of zinc sludge remained unreacted inside the agglomerates of ZnS. The formation behavior of ZnS was predicted by Elovich equation, which was found to describe the system satisfactorily indicating the heterogeneous nature of the sludge

  16. Band offset in zinc oxy-sulfide/cubic-tin sulfide interface from X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sanal, K.C.; Nair, P.K.; Nair, M.T.S., E-mail: mtsn@ier.unam.mx

    2017-02-28

    Highlights: • Zinc oxy-sulfide thin films, 175–240 nm, deposited by rf-sputtering from targets of ZnO + ZnS. • Oxygen content in thin films is enhanced 3–4 times compared with that in ZnO:ZnS targets. • Thin film ZnO{sub x}S{sub 1−x} with x = 0.88–0.27 and optical band gap 2.8–3.2 eV is suitable for solar cells. • The conduction band offset with SnS of cubic structure studied by XPS are +0.41 to −0.28 eV. - Abstract: Zinc oxy-sulfide, ZnO{sub x}S{sub 1−x}, has been found to provide better band alignment in thin film solar cells of tin sulfide of orthorhombic crystalline structure. Here we examine ZnO{sub x}S{sub 1−x}/SnS-CUB interface, in which the ZnO{sub x}S{sub 1−x} thin film was deposited by radio frequency (rf) magnetron sputtering on SnS thin film of cubic (CUB) crystalline structure with a band gap (E{sub g}) of 1.72 eV, obtained via chemical deposition. X-ray photoelectron spectroscopy provides the valence band maxima of the materials and hence places the conduction band offset of 0.41 eV for SnS-CUB/ZnO{sub 0.27}S{sub 0.73} and −0.28 eV for SnS-CUB/ZnO{sub 0.88}S{sub 0.12} interfaces. Thin films of ZnO{sub x}S{sub 1−x} with 175–240 nm in thickness were deposited from targets prepared with different ZnO to ZnS molar ratios. With the target of molar ratio of 1:13.4, the thin films are of composition ZnO{sub 0.27}S{sub 0.73} with hexagonal crystalline structure and with that of 1:1.7 ratio, it is ZnO{sub 0.88}S{sub 0.12}. The optical band gap of the ZnO{sub x}S{sub 1−x} thin films varies from 2.90 eV to 3.21 eV as the sulfur to zinc ratio in the film increases from 0.12:1 to 0.73:1 as determined from X-ray diffraction patterns. Thus, band offsets sought for absorber materials and zinc oxy-sulfide in solar cells may be achieved through a choice of ZnO:ZnS ratio in the sputtering target.

  17. Zinc sulfide in intestinal cell granules of Ancylostoma caninum adults

    Energy Technology Data Exchange (ETDEWEB)

    Gianotti, A.J.; Clark, D.T.; Dash, J. (Portland State Univ., OR (USA))

    1991-04-01

    A source of confusion has existed since the turn of the century about the reddish brown, weakly birefringent 'sphaerocrystals' located in the intestines of strongyle nematodes, Strongylus and Ancylostoma. X-ray diffraction and energy dispersive spectrometric analyses were used for accurate determination of the crystalline order and elemental composition of the granules in the canine hookworm Ancylostoma caninum. The composition of the intestinal pigmented granules was identified unequivocally as zinc sulfide. It seems most probable that the granules serve to detoxify high levels of metallic ions (specifically zinc) present due to the large intake of host blood.

  18. Reduction kinetics of zinc and cadmium sulfides with hydrogen

    International Nuclear Information System (INIS)

    Turgenev, I.S.; Kabisov, I.Kh.; Zviadadze, G.N.; Vasil'eva, O.Yu.

    1985-01-01

    Kinetics of reduction processes of zinc sulfide in the temperature range 800-1100 deg C and of cadmium sulfide 600-900 deg C has been stodied. Activation energies and reaction order in terms of hydrogen are calculated. Thermodynamic processes of reduction depend on aggregate state of the metal formed. For vaporous zinc in the temperature range 1050-950 deq C activation energy constitutes 174 kJ/mol, for liquid in the range 900-850 deg - 151 kJ/mol and reaction order in terms of hydrogen is 1.0. For vaporous cadmium in the temperature range 900-700 deg C activation energy constitutes 144 kJ/mol and reaction order in terms of hydrogen is 0.86, for liquid in the range 675-600 deg C 127 kJ/mol and 0.8 respectively. The processes of zinc and cadmium sulfide reduction proceed in kinetic regime and are limited by the rate of chemical reaction

  19. Relative flotation response of zinc sulfide: Mineral and precipitate

    Energy Technology Data Exchange (ETDEWEB)

    Rao, S.R.; Finch, J.A. [McGill Univ., Montreal, Quebec (Canada). Dept. of Mining and Metallurgical Engineering; Zhou, Z.; Xu, Z. [Univ. of Alberta, Edmonton, Alberta (Canada). Dept. of Chemical and Materials Engineering

    1998-04-01

    Flotation continues to extend to nonmineral applications, including recycling of materials, soil remediation, and effluent treatment. A study has been conducted to compare the floatability of fine zinc sulfide (ZnS) precipitates and sphalerite particles. The floatability of the precipitates was significantly poorer compared to sphalerite particles when xanthate was used as the collector. The floatability was improved by using dodecylamine as the collector, and the difference in floatability between the precipitates was further improved significantly by incorporating a hydrodynamic cavitation tube in a conventional (mechanical) flotation cell. The improved kinetics was attributed to in-situ gas nucleation on the precipitates.

  20. Solubility Measurements and Modeling of Zinc, Lead and Iron Sulfides at High Temperatures and High Pressures

    DEFF Research Database (Denmark)

    Carolina Figueroa Murcia, Diana; Fosbøl, Philip Loldrup; Thomsen, Kaj

    Solubility measurements of sulfides in aqueous solutions are necessary to understand the behaviour of these scaling minerals in geothermal and oil reservoirs. The low solubility levels of Zinc Sulfide (ZnS), Lead Sulfide (PbS) and Iron Sulfide (FeS) make the solubility measurements a challenging...... oxygen atmosphere to avoid the risk of oxidation of sulfide minerals. The solution is kept in an equilibrium cell at constant temperature and pressure with continuous stirring. The concentration of Zn2+, Pb2+, Fe2+ and S2- are measured using Inductively Coupled Plasma Optical Emission spectrometry (ICP...

  1. Inhibition effects of protein-conjugated amorphous zinc sulfide nanoparticles on tumor cells growth

    International Nuclear Information System (INIS)

    Cao Ying; Wang Huajie; Cao Cui; Sun Yuanyuan; Yang Lin; Wang Baoqing; Zhou Jianguo

    2011-01-01

    In this article, a facile and environmentally friendly method was applied to fabricate BSA-conjugated amorphous zinc sulfide (ZnS) nanoparticles using bovine serum albumin (BSA) as the matrix. Transmission electron microscopy analysis indicated that the stable and well-dispersed nanoparticles with the diameter of 15.9 ± 2.1 nm were successfully prepared. The energy dispersive X-ray, X-ray powder diffraction, Fourier transform infrared spectrograph, high resolution transmission electron microscope, and selected area electron diffraction measurements showed that the obtained nanoparticles had the amorphous structure and the coordination occurred between zinc sulfide surfaces and BSA in the nanoparticles. In addition, the inhibition effects of BSA-conjugated amorphous zinc sulfide nanoparticles on tumor cells growth were described in detail by cell viability analysis, optical and electron microscopy methods. The results showed that BSA-conjugated amorphous zinc sulfide nanoparticles could inhibit the metabolism and proliferation of human hepatocellular carcinoma cells, and the inhibition was dose dependent. The half maximal inhibitory concentration (IC50) was 0.36 mg/mL. Overall, this study suggested that BSA-conjugated amorphous zinc sulfide nanoparticles had the application potential as cytostatic agents and BSA in the nanoparticles could provide the modifiable site for the nanoparticles to improve their bioactivity or to endow them with the target function.

  2. Optical and structural characteristics of lead sulfides thin films

    International Nuclear Information System (INIS)

    Karim Deraman; Bakar Ismail; Samsudi Sakrani; Gould, R.D.

    1992-01-01

    Tin sulfide films have been prepared by evaporation technique at 1x10 - 4 torr and at substrate temperatures between 100 to 300 0 C. The films thickness were 52 to 370 nm. From the absorption 1.47 eV and X-ray diffraction patent shows that the composition of films have changed from SnS 2 (at low temperature) to SnS (at higher temperature)

  3. Electrical and optical properties of zinc oxide: thin films

    International Nuclear Information System (INIS)

    Zuhairusnizam Md Darus; Abdul Jalil Yeop Majlis; Anis Faridah Md Nor; Burhanuddin Kamaluddin

    1992-01-01

    Zinc oxide films have been prepared by high temperature oxidation of thermally evaporated zinc films on glass substrates. The resulting films are characterized using X-ray diffraction, optical absorption and electrical conductivity measurements. These zinc oxide films are very transparent and photoconductive

  4. HISTOLOGICAL CHANGES IN POECILIA RETICULATA AFTER INTERACTION OF IONIZING RADIATION AND ZINC SULFID

    Directory of Open Access Journals (Sweden)

    Michaela Špalková

    2012-12-01

    Full Text Available In our experiment we have studied interaction of ionizing radiation and zinc at Poecilia reticulata. Fish were irradiated with a 20 Gy of gamma-rays. Zinc sulphate in concentration 25 mg.l-1 was added to water in aquarium. Food intake, clinicl symptoms and histological changes were followed after gamma-irradiation and zinc sulfid in guppy Poecilia reticulata. In the first days timidity and lethargy were observed. The most prominent clinical symptoms observed were emaciation, hampered breathing and haemorrhages. Histological findings corresponded with these symptoms.doi:10.5219/228

  5. Anglesite and silver recovery from jarosite residues through roasting and sulfidization-flotation in zinc hydrometallurgy.

    Science.gov (United States)

    Han, Haisheng; Sun, Wei; Hu, Yuehua; Jia, Baoliang; Tang, Honghu

    2014-08-15

    Hazardous jarosite residues contain abundant valuable minerals that are difficult to be recovered by traditional flotation process. This study presents a new route, roasting combined with sulfidization-flotation, for the recovery of anglesite and silver from jarosite residues of zinc hydrometallurgy. Surface appearance and elemental distribution of jarosite residues was examined by scanning electron microscopy and energy dispersive X-ray spectrometry analysis, respectively. Decomposition and transformation mechanisms of jarosite residues were illustrated by differential thermal analysis. Results showed that after roasting combined with flotation, the grade and recovery of lead were 43.89% and 66.86%, respectively, and those of silver were 1.3 kg/t and 81.60%, respectively. At 600-700 °C, jarosite was decomposed to release encapsulated valuable minerals such as anglesite (PbSO4) and silver mineral; silver jarosite decomposed into silver sulfate (Ag2SO4); and zinc ferrite (ZnO · Fe2O3) decomposed into zinc sulfate (ZnSO4) and hematite (Fe2O3). Bared anglesite and silver minerals were modified by sodium sulfide and easily collected by flotation collectors. This study demonstrates that the combination of roasting and sulfidization-flotation provides a promising process for the recovery of zinc, lead, and silver from jarosite residues of zinc hydrometallurgy. Copyright © 2014 Elsevier B.V. All rights reserved.

  6. Fabrication and Characterization of Zinc Sulfide Nanoparticles and Nanocomposites Prepared via a Simple Chemical Precipitation Method

    Directory of Open Access Journals (Sweden)

    Kambiz Hedayati

    2016-07-01

    Full Text Available In this research zinc sulfide (ZnS nanoparticles and nanocomposites powders were prepared by chemical precipitation method using zinc acetate and various sulfur sources. The ZnS nanoparticles were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible and fourier transform infra-red. The structure of nanoparticles was studied using X-ray diffraction pattern. The crystallite size of ZnS nanoparticles was calculated by Debye–Scherrer formula. Morphology of nano-crystals was observed and investigated using the scanning electron microscopy. The grain size of zinc sulfide nanoparticles were in suitable agreement with the crystalline size calculated by X-ray diffraction results. The optical properties of particles were studied with ultraviolet-visible absorption spectrum.

  7. Cuprous sulfide as a film insulation for superconductors

    International Nuclear Information System (INIS)

    Wagner, G.R.; Uphoff, J.H.; Vecchio, P.D.

    1982-01-01

    The LCP test coil utilizes a conductor of forced-flow design having 486 strands of multifilametary Nb 3 Sn compacted in a stainless steel sheath. The impetus for the work reported here stemmed from the need for some form of insulation for those strands to prevent sintering during reaction and to reduce ac losses. The work reported here experimented with cuprous sulfide coatings at various coating rates and thicknesses. Two solenoids that were wound with cuprous sulfide-coated wires and heat-treated at 700 degrees C were found to demonstrate that the film is effective in providing turn-to-turn insulation for less than about 0.5V between turns. The sulfide layer provided a metal-semiconductor junction which became conducting at roughly 0.5V. Repeated cycling of the coil voltage in excess of that value produced no damage to the sulfide layer. The junction provided self-protection for the coil as long as the upper allowable current density in the sulfide was not exceeded. No training was apparent up to 6.4 T

  8. Removal of metals from lead-zinc mine tailings using bioleaching and followed by sulfide precipitation.

    Science.gov (United States)

    Ye, Maoyou; Li, Guojian; Yan, Pingfang; Ren, Jie; Zheng, Li; Han, Dajian; Sun, Shuiyu; Huang, Shaosong; Zhong, Yujian

    2017-10-01

    Mine tailings often contain significant amounts of metals and sulfide, many traditional operations used to minerals was not as good as those currently available. This study investigated metals removal from lead-zinc mine tailings using bioleaching and followed by sulfide precipitation. Metals were dissolved from the tailings by the bacteria in a bioleaching reactor. During a 10% pulp density bioleaching experiment, approximately 0.82% Pb, 97.38% Zn, and 71.37% Fe were extracted after 50 days. With the pulp density of 10% and 20%, the dissolution of metals followed shrinking core kinetic model. Metals (Pb, Zn, and Fe) present in the pregnant bioleaching leachate. Metals were next precipitated as a sulfide phase using sodium sulfide (Na 2 S). Metal precipitations were selectively and quantitatively produced from the bioleaching leachate by adding Na 2 S. More than 99% of the zinc and 75% of the iron was precipitated using 25 g/L Na 2 S in the bioleaching leachate. The results in the study were to provide useful information for recovering or removing metals from lead-zinc mine tailings. Copyright © 2017 Elsevier Ltd. All rights reserved.

  9. Elementary sulfur in effluent from denitrifying sulfide removal process as adsorbent for zinc(II).

    Science.gov (United States)

    Chen, Chuan; Zhou, Xu; Wang, Aijie; Wu, Dong-hai; Liu, Li-hong; Ren, Nanqi; Lee, Duu-Jong

    2012-10-01

    The denitrifying sulfide removal (DSR) process can simultaneously convert sulfide, nitrate and organic compounds into elementary sulfur (S(0)), di-nitrogen gas and carbon dioxide, respectively. However, the S(0) formed in the DSR process are micro-sized colloids with negatively charged surface, making isolation of S(0) colloids from other biological cells and metabolites difficult. This study proposed the use of S(0) in DSR effluent as a novel adsorbent for zinc removal from wastewaters. Batch and continuous tests were conducted for efficient zinc removal with S(0)-containing DSR effluent. At pHremoval rates of zinc(II) were increased with increasing pH. The formed S(0) colloids carried negative charge onto which zinc(II) ions could be adsorbed via electrostatic interactions. The zinc(II) adsorbed S(0) colloids further enhanced coagulation-sedimentation efficiency of suspended solids in DSR effluents. The DSR effluent presents a promising coagulant for zinc(II) containing wastewaters. Copyright © 2012 Elsevier Ltd. All rights reserved.

  10. Pyrolytically grown indium sulfide sensitized zinc oxide nanowires for solar water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Komurcu, Pelin; Can, Emre Kaan; Aydin, Erkan; Semiz, Levent [Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, 06560 Ankara (Turkey); Gurol, Alp Eren; Alkan, Fatma Merve [Department of Materials Science and Nanotechnology Engineering, TOBB University of Economics and Technology, 06560 Ankara (Turkey); Sankir, Mehmet; Sankir, Nurdan Demirci [Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, 06560 Ankara (Turkey); Department of Materials Science and Nanotechnology Engineering, TOBB University of Economics and Technology, 06560 Ankara (Turkey)

    2015-11-15

    Zinc oxide (ZnO) nanowires, sensitized with spray pyrolyzed indium sulfide, were obtained by chemical bath deposition. The XRD analysis indicated dominant evolution of hexagonal ZnO phase. Significant gain in photoelectrochemical current using ZnO nanowires is largely accountable to enhancement of the visible light absorption and the formation of heterostructure. The maximum photoconversion efficiency of 2.77% was calculated for the indium sulfide sensitized ZnO nanowire photoelectrodes. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. COMPOSITE MATERIALS BASED ON ZINC SULFIDE AND ZINC OXIDE: STRUCTURAL AND BIOCIDAL PROPERTIES

    Directory of Open Access Journals (Sweden)

    Sukhodub L.B

    2016-12-01

    Full Text Available Introduction. The widespread use of drugs with antimicrobial action has led to the formation of microorganism resistance against wide range of antibiotics. One of the approaches to dissolving this problem is the substances modification by inorganic bioactive ions in oder to initiate a controlled reaction in the bone tissues and provision of antimicrobial activity. It is known that ZnO-based materials have a pronounced biocompatibility, they are characterized by high limit strength, absolute mechanical hardness, as well as the ability to withstand the harsh operating conditions. The aim of this work is the study of structural and biocidal properties of composite material based on zinc oxide and zinc sulfide (ZnS-ZnO and its complex with an organic substance - sodium alginate (ZnS-ZnO-Alg for use in biomedical purpose. Materials and methods. For the synthesis of ZnS-ZnO composite 50 ml 0.2M solution zinc nitrate was added to the 50 ml 0.2M thiourea CS (NH ₂ ₂ solution and stirred in a shaker for 60 minutes. The formation of the compound took place when added to a mixture of 25 mas.% solution of ammonia with the subsequent heating at 80 oC for 30 minutes. Synthesis of the metalorganic complex of ZnS-ZnO-Alg was performed by above mentioned procedure, but to the thiourea solution was previously added 1 ml of 3 mas.% solution of sodium alginate under ultrasonic mixing.. For the next research composites were dried or lyophilized. Study of antibacterial activity of the ZnS-ZnO and ZnS-ZnO-Alg particles was carried out with the use of nutrient mediums: Muller Hinton, meat-pepton nutrient (MPN. As the reference cultures were used E. coli ATCC 25922, S. aureus ATCC 25923, S. aureus ATSS 29213, S. aureus ATSS-6538, C albicans ATCC 885-653. Determination of the minimum bactericidal concentration (MBC was carried out by a modified serial diluted method in liquid nutrient broth followed plating on solid Muller Hinton nutrient medium. In addition, the

  12. Surface stoichiometry of zinc sulfide and its effect on the adsorption behaviors of xanthate

    Directory of Open Access Journals (Sweden)

    Wang Meng

    2011-11-01

    Full Text Available Abstract In this paper, the surface stoichiometry, acid-base properties as well as the adsorption of xanthate at ZnS surfaces were studied by means of potentiometric titration, adsorption and solution speciation modeling. The surface proton binding site was determined by using Gran plot to evaluate the potentiometric titration data. Testing results implied that for stoichiometric surfaces of zinc sulfide, the proton and hydroxide determine the surface charge. For the nonstoichiometric surfaces, the surface charge is controlled by proton, hydroxide, zinc and sulfide ions depending on specific conditions. The xanthate adsorption decreases with increasing solution pH, which indicates an ion exchange reaction at the surfaces. Based on experimental results, the surface protonation, deprotonation, stoichiometry and xanthate adsorption mechanism were discussed.

  13. Prediction and experimental determination of the solubility of exotic scales at high temperatures - Zinc sulfide

    DEFF Research Database (Denmark)

    Carolina Figueroa Murcia, Diana; Fosbøl, Philip Loldrup; Thomsen, Kaj

    2016-01-01

    The presence of "exotic" scale such as Zinc Sulfide (ZnS), Lead Sulfide (PbS) and Iron Sulfide (FeS) in HP/HT reservoirs has been identified. "Exotic" scale materials come as a new challenge in HP/HT reservoirs. This has led to the development of more advanced tools to predict their behavior...... at extreme conditions. The aim of this work is to include ZnS into the group of scale materials that can be modeled with the Extended UNIQUAC model. Solubility data for ZnS are scarce in the open literature. In order to improve the available data, we study the experimental behavior of ZnS solubility at high...... temperatures. The determination of the solubility of ZnS is carried out at temperatures up to 250°C. Zinc sulfide (99.99%) and ultra-pure water are placed in a vial in a reduced oxygen atmosphere. The sample is placed in a controlled bath and stirred until equilibrium is attained. The suspension is filtered...

  14. Cadmium sulfide thin films growth by chemical bath deposition

    Science.gov (United States)

    Hariech, S.; Aida, M. S.; Bougdira, J.; Belmahi, M.; Medjahdi, G.; Genève, D.; Attaf, N.; Rinnert, H.

    2018-03-01

    Cadmium sulfide (CdS) thin films have been prepared by a simple technique such as chemical bath deposition (CBD). A set of samples CdS were deposited on glass substrates by varying the bath temperature from 55 to 75 °C at fixed deposition time (25 min) in order to investigate the effect of deposition temperature on CdS films physical properties. The determination of growth activation energy suggests that at low temperature CdS film growth is governed by the release of Cd2+ ions in the solution. The structural characterization indicated that the CdS films structure is cubic or hexagonal with preferential orientation along the direction (111) or (002), respectively. The optical characterization indicated that the films have a fairly high transparency, which varies between 55% and 80% in the visible range of the optical spectrum, the refractive index varies from 1.85 to 2.5 and the optical gap value of which can reach 2.2 eV. It can be suggested that these properties make these films perfectly suitable for their use as window film in thin films based solar cells.

  15. The production of UV Absorber amorphous cerium sulfide thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kariper, İshak Afşin, E-mail: akariper@gmail.com [Faculty of Education, Erciyes University, Kayseri (Turkey)

    2017-10-15

    This study investigates the production of cerium sulfide (CeSx) amorphous thin films on substrates (commercial glass) by chemical bath deposition at different pH levels. The transmittance, absorption, optical band gap and refractive index of the films are measured by UV/VIS Spectrum. According to XRD analysis, the films show amorphous structure in the baths with pH: 1 to 5. It has been observed that the optical and structural properties of the films depend on pH value of the bath. The optical band gap (2.08 eV to 3.16 eV) of the films changes with the film thickness (23 nm to 1144 nm). We show that the refractive index has a positive relationship with the film thickness, where the values of 1.93, 1.45, 1.42, 2.60 and 1.39 are obtained for the former, and 34, 560, 509, 23 and 1144 nm (at 550 nm wavelength) for the latter. We compare the optical properties of amorphous and crystal form of CeSx thin films. We show that the optical band gaps of the amorphous CeS{sub x} are lower than that of crystal CeS{sub x} . (author)

  16. Chemical bath deposited zinc sulfide buffer layers for copper indium gallium sulfur-selenide solar cells and device analysis

    International Nuclear Information System (INIS)

    Kundu, Sambhu; Olsen, Larry C.

    2005-01-01

    Cadmium-free copper indium gallium sulfur-selenide (CIGSS) thin film solar cells have been fabricated using chemical bath deposited (CBD) zinc sulfide (ZnS) buffer layers. Shell Solar Industries provided high quality CIGSS absorber layers. The use of CBD-ZnS, which is a higher band gap material than CdS, improved the quantum efficiency of fabricated cells at lower wavelengths, leading to an increase in short circuit current. The best cell to date yielded an active area (0.43 cm 2 ) efficiency of 13.3%. The effect of the ZnS buffer layer thickness on device performance was studied carefully. This paper also presents a discussion of issues relevant to the use of the CBD-ZnS buffer material for improving device performance

  17. Anglesite and silver recovery from jarosite residues through roasting and sulfidization-flotation in zinc hydrometallurgy

    Energy Technology Data Exchange (ETDEWEB)

    Han, Haisheng; Sun, Wei, E-mail: hanhaishengjingji@126.com; Hu, Yuehua; Jia, Baoliang; Tang, Honghu

    2014-08-15

    Highlights: • Jarosite precipitate hindered the recovery of valuable minerals. • Under 600–700 °C, jarosite decomposed and released the encapsulated valuable minerals. • The bared valuable minerals were easily collected by flotation process. • The new process was promising for dealing with jarosite residues. - Abstract: Hazardous jarosite residues contain abundant valuable minerals that are difficult to be recovered by traditional flotation process. This study presents a new route, roasting combined with sulfidization-flotation, for the recovery of anglesite and silver from jarosite residues of zinc hydrometallurgy. Surface appearance and elemental distribution of jarosite residues was examined by scanning electron microscopy and energy dispersive X-ray spectrometry analysis, respectively. Decomposition and transformation mechanisms of jarosite residues were illustrated by differential thermal analysis. Results showed that after roasting combined with flotation, the grade and recovery of lead were 43.89% and 66.86%, respectively, and those of silver were 1.3 kg/t and 81.60%, respectively. At 600–700 °C, jarosite was decomposed to release encapsulated valuable minerals such as anglesite (PbSO{sub 4}) and silver mineral; silver jarosite decomposed into silver sulfate (Ag{sub 2}SO{sub 4}); and zinc ferrite (ZnO·Fe{sub 2}O{sub 3}) decomposed into zinc sulfate (ZnSO{sub 4}) and hematite (Fe{sub 2}O{sub 3}). Bared anglesite and silver minerals were modified by sodium sulfide and easily collected by flotation collectors. This study demonstrates that the combination of roasting and sulfidization-flotation provides a promising process for the recovery of zinc, lead, and silver from jarosite residues of zinc hydrometallurgy.

  18. Anglesite and silver recovery from jarosite residues through roasting and sulfidization-flotation in zinc hydrometallurgy

    International Nuclear Information System (INIS)

    Han, Haisheng; Sun, Wei; Hu, Yuehua; Jia, Baoliang; Tang, Honghu

    2014-01-01

    Highlights: • Jarosite precipitate hindered the recovery of valuable minerals. • Under 600–700 °C, jarosite decomposed and released the encapsulated valuable minerals. • The bared valuable minerals were easily collected by flotation process. • The new process was promising for dealing with jarosite residues. - Abstract: Hazardous jarosite residues contain abundant valuable minerals that are difficult to be recovered by traditional flotation process. This study presents a new route, roasting combined with sulfidization-flotation, for the recovery of anglesite and silver from jarosite residues of zinc hydrometallurgy. Surface appearance and elemental distribution of jarosite residues was examined by scanning electron microscopy and energy dispersive X-ray spectrometry analysis, respectively. Decomposition and transformation mechanisms of jarosite residues were illustrated by differential thermal analysis. Results showed that after roasting combined with flotation, the grade and recovery of lead were 43.89% and 66.86%, respectively, and those of silver were 1.3 kg/t and 81.60%, respectively. At 600–700 °C, jarosite was decomposed to release encapsulated valuable minerals such as anglesite (PbSO 4 ) and silver mineral; silver jarosite decomposed into silver sulfate (Ag 2 SO 4 ); and zinc ferrite (ZnO·Fe 2 O 3 ) decomposed into zinc sulfate (ZnSO 4 ) and hematite (Fe 2 O 3 ). Bared anglesite and silver minerals were modified by sodium sulfide and easily collected by flotation collectors. This study demonstrates that the combination of roasting and sulfidization-flotation provides a promising process for the recovery of zinc, lead, and silver from jarosite residues of zinc hydrometallurgy

  19. Surface and capillary forces encountered by zinc sulfide microspheres in aqueous electrolyte.

    Science.gov (United States)

    Gillies, Graeme; Kappl, Michael; Butt, Hans-Jürgen

    2005-06-21

    The colloid probe technique was used to investigate the interactions between individual zinc sulfide (ZnS) microspheres and an air bubble in electrolyte solution. Incorporation of zinc ions into the electrolyte solution overcomes the disproportionate zinc ion dissolution and mimics high-volume-fraction conditions common in flotation. Determined interaction forces revealed a distinct lack of long-ranged hydrophobic forces, indicated by the presence of a DLVO repulsion prior to particle engulfment. Single microsphere contact angles were determined from particle-bubble interactions. Contact angles increased with decreasing radii and with surface oxidation. Surface modification by the absorption of copper and subsequently potassium O-ethyldithiocarbonate (KED) reduced repulsive forces and strongly increased contact angles.

  20. Preparation and characterization of amorphous manganese sulfide thin films by SILAR method

    International Nuclear Information System (INIS)

    Pathan, H.M.; Kale, S.S.; Lokhande, C.D.; Han, Sung-Hwan; Joo, Oh-Shim

    2007-01-01

    Manganese sulfide thin films were deposited by a simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method using manganese acetate as a manganese and sodium sulfide as sulfide ion sources, respectively. Manganese sulfide films were characterized for their structural, surface morphological and optical properties by means of X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption measurement techniques. The as-deposited film on glass substrate was amorphous. The optical band gap of the film was found to be thickness dependent. As thickness increases optical band gap was found to be increase. The water angle contact was found to be 34 o , suggesting hydrophilic nature of manganese sulfide thin films. The presence of Mn and S in thin film was confirmed by energy dispersive X-ray analysis

  1. The protective nature of passivation films on zinc: surface charge

    International Nuclear Information System (INIS)

    Muster, Tim H.; Cole, Ivan S.

    2004-01-01

    The influence of oxide surface charge on the corrosion performance of zinc metals was investigated. Oxidised zinc species (zinc oxide, zinc hydroxychloride, zinc hydroxysulfate and zinc hydroxycarbonate) with chemical compositions similar to those produced on zinc during atmospheric corrosion were formed as particles from aqueous solution, and as passive films deposited onto zinc powder, and rolled zinc, surfaces. Synthesized oxides were characterised by X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy and electron probe X-ray microanalysis. The zeta potentials of various oxide particles, as determined by microelectrophoresis, are reported as a function of pH. Particulates containing a majority of zinc hydroxycarbonate and zinc hydroxysulfate crystallites were found to possess a negative surface charge below pH 6, whilst zinc oxide-hydroxide and zinc hydroxychloride crystallites possessed isoelectric points (IEP's) higher than pH 8. The ability of chloride species to pass through a bed of 3 μm diameter zinc powder was found to increase for surfaces possessing carboxy and sulfate surface species, suggesting that negatively charged surfaces can aid in the repulsion of chloride ions. Electrochemical analysis of the open-circuit potential as a function of time at a fixed pH of 6.5 showed that the chemical composition of passive films on zinc plates influenced the ability of chloride ions to access anodic sites for periods of approximately 1 h

  2. CO2 gas sensitivity of sputtered zinc oxide thin films

    Indian Academy of Sciences (India)

    TECS

    Gas sensitivity; ZnO; sputtering; XRD patterns; structure; thin films. 1. Introduction. Because zinc ... voltage and absorption properties of those fabricated films have been ... tations are useful in many physical applications. The in- plane (Hegde ...

  3. Effects of humic substances on precipitation and aggregation of zinc sulfide nanoparticles

    Science.gov (United States)

    Deonarine, Amrika; Lau, Boris L.T.; Aiken, George R.; Ryan, Joseph N.; Hsu-Kim, Heileen

    2011-01-01

    Nanoparticulate metal sulfides such as ZnS can influence the transport and bioavailability of pollutant metals in anaerobic environments. The aim of this work was to investigate how the composition of dissolved natural organic matter (NOM) influences the stability of zinc sulfide nanoparticles as they nucleate and aggregate in water with dissolved NOM. We compared NOM fractions that were isolated from several surface waters and represented a range of characteristics including molecular weight, type of carbon, and ligand density. Dynamic light scattering was employed to monitor the growth and aggregation of Zn−S−NOM nanoparticles in supersaturated solutions containing dissolved aquatic humic substances. The NOM was observed to reduce particle growth rates, depending on solution variables such as type and concentration of NOM, monovalent electrolyte concentration, and pH. The rates of growth increased with increasing ionic strength, indicating that observed growth rates primarily represented aggregation of charged Zn−S−NOM particles. Furthermore, the observed rates decreased with increasing molecular weight and aromatic content of the NOM fractions, while carboxylate and reduced sulfur content had little effect. Differences between NOM were likely due to properties that increased electrosteric hindrances for aggregation. Overall, results of this study suggest that the composition and source of NOM are key factors that contribute to the stabilization and persistence of zinc sulfide nanoparticles in the aquatic environment.

  4. Mechanism analysis of improved DLC films friction behaviors with liquid sulfidation treatment

    International Nuclear Information System (INIS)

    Zeng Qunfeng; Yu Fei; Dong Guangneng; Mao Junhong

    2012-01-01

    Highlights: ► Liquid sulfidation is applied to treat DLC films. ► Sulfur atoms are chemically bonded and the graphitization presented in the treated films. ► The treated films exhibited much lower coefficient of friction than the untreated films under dry friction condition. ► The sulfidation mechanisms are supposed as surface chemical reaction and surface diffusion. ► The presence of sulfur-containing materials and graphitization are beneficial to improve anti-friction behaviors of the treated films. - Abstract: Diamond like carbon (DLC) films were treated by liquid sulfidation to improve their friction behaviors. Friction behaviors of DLC films were experimentally evaluated in ambient air under dry friction using GCr15 steel ball sliding over DLC-coated steel flat in a ball-on-disk tribometer system. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were applied to identify the chemical composition and structure of DLC films. It was found that the content of sp 2 carbon bond increased and G peak shifted to high wave number after sulfidation treatment. The measurement results showed that sulfur atoms were chemically bonded and the graphitization occurred in the treated DLC films. It was indicated that the treated DLC films exhibited much better friction behaviors than the untreated films, especially for DLC films deposited with high nitrogen ratio. In this paper, we proposed the possible sulfidation mechanism of sulfurized DLC films. Sulfidation mechanism is postulated that thiourea reacted with oxygen to form sulfur-containing organic compounds which included CSSC, CSOH and (NH 2 )NH=CSO 2 H and surface diffusion during sulfidation treatment. The anti-friction behaviors of the treated DLC films can be attributed to the production of the compounds containing sulfur on the DLC film surface, the reduce of oxygen content and the presence of graphitization of DLC films.

  5. Light-emitting diodes based on nontoxic zinc-alloyed silver-indium-sulfide (AIZS) nanocrystals

    Science.gov (United States)

    Bhaumik, Saikat; Guchhait, Asim; Pal, Amlan J.

    2014-04-01

    We report solution-processed growth of zinc-alloyed silver-indium-sulfide (AIZS) nanocrystals followed by fabrication and characterization of light-emitting diodes (LEDs) based on such nanostructures. While growing the low dimensional crystals, we vary the ratio between the silver and zinc contents that in turn tunes the bandgap and correspondingly their photoluminescence (PL) emission. We also dope the AIZS nanocrystals with manganese, so that their PL emission, which appears due to a radiative transition between the d-states of the dopants, becomes invariant in energy when the diameter of the quantum dots or the dopant concentration in the nanostructures varies. The LEDs fabricated with such undoped and manganese-doped AIZS nanocrystals emit electroluminescence (EL) that matches the PL spectrum of the respective nanomaterial. The results demonstrate examples of quantum dot LEDs (QDLEDs) based on nontoxic AIZS nanocrystals.

  6. Intense pulsed light annealing of copper zinc tin sulfide nanocrystal coatings

    Energy Technology Data Exchange (ETDEWEB)

    Williams, Bryce A.; Smeaton, Michelle A.; Holgate, Collin S.; Trejo, Nancy D.; Francis, Lorraine F., E-mail: francis@umn.edu; Aydil, Eray S., E-mail: aydil@umn.edu [Department of Chemical Engineering and Materials Science, University of Minnesota, 151 Amundson Hall, 421 Washington Avenue SE, Minneapolis, Minnesota 55455 (United States)

    2016-09-15

    A promising method for forming the absorber layer in copper zinc tin sulfide [Cu{sub 2}ZnSnS{sub 4} (CZTS)] thin film solar cells is thermal annealing of coatings cast from dispersions of CZTS nanocrystals. Intense pulsed light (IPL) annealing utilizing xenon flash lamps is a potential high-throughput, low-cost, roll-to-roll manufacturing compatible alternative to thermal annealing in conventional furnaces. The authors studied the effects of flash energy density (3.9–11.6 J/cm{sup 2}) and number of flashes (1–400) during IPL annealing on the microstructure of CZTS nanocrystal coatings cast on molybdenum-coated soda lime glass substrates (Mo-coated SLG). The annealed coatings exhibited cracks with two distinct linear crack densities, 0.01 and 0.2 μm{sup −1}, depending on the flash intensity and total number of flashes. Low density cracking (0.01 μm{sup −1}, ∼1 crack per 100 μm) is caused by decomposition of CZTS at the Mo-coating interface. Vapor decomposition products at the interface cause blisters as they escape the coating. Residual decomposition products within the blisters were imaged using confocal Raman spectroscopy. In support of this hypothesis, replacing the Mo-coated SLG substrate with quartz eliminated blistering and low-density cracking. High density cracking is caused by rapid thermal expansion and contraction of the coating constricted on the substrate as it is heated and cooled during IPL annealing. Finite element modeling showed that CZTS coatings on low thermal diffusivity materials (i.e., SLG) underwent significant differential heating with respect to the substrate with rapid rises and falls of the coating temperature as the flash is turned on and off, possibly causing a build-up of tensile stress within the coating prompting cracking. Use of a high thermal diffusivity substrate, such as a molybdenum foil (Mo foil), reduces this differential heating and eliminates the high-density cracking. IPL annealing in presence of sulfur

  7. A Study on Dielectric Properties of Cadmium Sulfide-Zinc Sulfide Core-Shell Nanocomposites for Application as Nanoelectronic Filter Component in the Microwave Domain

    Science.gov (United States)

    Devi, Jutika; Datta, Pranayee

    2018-03-01

    Complex permittivities of cadmium sulfide (CdS), zinc sulfide (ZnS), and of cadmium sulfide-zinc sulfide (CdS/ZnS) core-shell nanoparticles embedded in a polyvinyl alcohol matrix (PVA) were measured in liquid phase using a VectorNetwork Analyzer in the frequency range of 500 MHz-10 GHz. These nanocomposites are modeled as an embedded capacitor, and their electric field distribution and polarization have been studied using COMSOL Multiphysics software. By varying the thickness of the shell and the number of inclusions, the capacitance values were estimated. It was observed that CdS, ZnS and CdS/ZnS core-shell nanoparticles embedded in a polyvinyl alcohol matrix show capacitive behavior. There is a strong influence of the dielectric properties in the capacitive behavior of the embedded nanocapacitor. The capping matrix, position and filling factors of nanoinclusions all affect the capacitive behavior of the tested nanocomposites. Application of the CdS, ZnS and CdS/ZnS core-shell nanocomposite as the passive low-pass filter circuit has also been investigated. From the present study, it has been found that CdS/ZnS core-shell nanoparticles embedded in PVA matrix are potential structures for application as nanoelectronic filter components in different areas of communication.

  8. Design and fabrication of anti-reflection coating on Gallium Phosphide, Zinc Selenide and Zinc Sulfide substrates for visible and infrared application

    Directory of Open Access Journals (Sweden)

    Mokrý P.

    2013-05-01

    Full Text Available Results of design and fabrication of a dual-band anti-reflection coating on a gallium phosphide (GaP, zinc selenide (ZnSe and zinc sulfide (ZnS substrates are presented. A multilayer stack structure of antireflection coatings made of zinc sulfide and yttrium fluoride (YF3 was theoretically designed for optical bands between 0.8 and 0.9 μm and between 9.5 and 10.5 μm. This stack was designed as efficient for these materials (GaP, ZnS, ZnSe together. Multilayer stack structure was deposited using thermal evaporation method. Theoretically predicted transmittance spectra were compared with transmitted spectra measured on coated substrates. Efficiency of anti-reflection coating is estimated and discrepancies are analyzed and discussed.

  9. Synthesis and Characterization of Phase-pure Copper Zinc Tin Sulfide (Cu2ZnSnS4) Nanoparticles

    Science.gov (United States)

    Monahan, Bradley Michael

    Semiconductor nanoparticles have been an important area of research in many different disciplines. A substantial amount of this work has been put toward advancing the field of photovoltaics. However, current p-type photovoltaic materials can not sustain the large scale production needed for future energy demands due to their low elemental abundance. Therefore, Earth abundant semiconductor materials have become of great interest to the photovoltaic community especially, the material copper zinc tin sulfide (CZTS), also known by its mineral name kesterite. CZTS exhibits desirable properties for photovoltaics, such as elemental abundance, high absorption coefficient (~104 cm-1 ), high carrier concentration, and optimum direct band gap (1.5 eV). To date, solution based approaches for making CZTS have yielded the most promising conversion efficiencies in solar cells. To that end, the motivation of nanoparticle based inks that can be used in high throughput production are an attractive route for large scale deployment. This has driven the need to make high quality CZTS nanoparticles that possess the properties of the pure kesterite phase with high monodispersity that can be deposited into dense thin films. The inherent challenge of making a quaternary compound of a single phase has made this a difficult task; however, some of those fundamental problems are addressed in this thesis. This had resulted in the synthesis of phase-pure k-CZTS confirmed by powder X-ray diffraction, Raman spectroscopy, UV-visible absorption spectroscopy and energy dispersive x-ray spectroscopy. Furthermore, ultra-fast laser spectroscopy was done on CZTS thin films made from phase-pure kesterite nanoparticles synthesized in this work. This thesis provides new data that directly probes the lifetime of photogenerated free carriers in kesterite CZTS (k-CZTS) thin films.

  10. Visible-light-enhanced interactions of hydrogen sulfide with composites of zinc (oxy)hydroxide with graphite oxide and graphene.

    Science.gov (United States)

    Seredych, Mykola; Mabayoje, Oluwaniyi; Bandosz, Teresa J

    2012-01-17

    Composites of zinc(oxy)hydroxide-graphite oxide and of zinc(oxy)hydroxide-graphene were used as adsorbents of hydrogen sulfide under ambient conditions. The initial and exhausted samples were characterized by XRD, FTIR, potentiometric titration, EDX, thermal analysis, and nitrogen adsorption. An increase in the amount of H(2)S adsorbed/oxidized on their surfaces in comparison with that of pure Zn(OH)(2) is linked to the structure of the composite, the relative number of terminal hydroxyls, and the kind of graphene-based phase used. Although terminal groups are activated by a photochemical process, the graphite oxide component owing to the chemical bonds with the zinc(oxy)hydroxide phase and conductive properties helps in electron transfer, leading to more efficient oxygen activation via the formation of superoxide ions. Elemental sulfur, zinc sulfide, sulfite, and sulfate are formed on the surface. The formation of sulfur compounds on the surface of zinc(oxy)hydroxide during the course of the breakthrough experiments and thus Zn(OH)(2)-ZnS heterojunctions can also contribute to the increased surface activity of our materials. The results show the superiority of graphite oxide in the formation of composites owing to its active surface chemistry and the possibility of interface bond formation, leading to an increase in the number of electron-transfer reactions. © 2011 American Chemical Society

  11. Poly(methyl methacrylate)/layered zinc sulfide nanocomposites: Preparation, characterization and the improvements in thermal stability, flame retardant and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Biao; Zhou, Keqing; Jiang, Saihua [State Key Laboratory of Fire Science, University of Science and Technology of China, 96 Jinzhai Road, Hefei, Anhui 230026 (China); Shi, Yongqian [State Key Laboratory of Fire Science, University of Science and Technology of China, 96 Jinzhai Road, Hefei, Anhui 230026 (China); Suzhou Key Laboratory of Urban Public Safety, Suzhou Institute for Advanced Study, University of Science and Technology of China, 166 Ren’ai Road, Suzhou, Jiangsu 215123 (China); Wang, Bibo [State Key Laboratory of Fire Science, University of Science and Technology of China, 96 Jinzhai Road, Hefei, Anhui 230026 (China); Gui, Zhou, E-mail: zgui@ustc.edu.cn [State Key Laboratory of Fire Science, University of Science and Technology of China, 96 Jinzhai Road, Hefei, Anhui 230026 (China); Hu, Yuan, E-mail: yuanhu@ustc.edu.cn [State Key Laboratory of Fire Science, University of Science and Technology of China, 96 Jinzhai Road, Hefei, Anhui 230026 (China); Suzhou Key Laboratory of Urban Public Safety, Suzhou Institute for Advanced Study, University of Science and Technology of China, 166 Ren’ai Road, Suzhou, Jiangsu 215123 (China)

    2014-08-15

    Highlights: • Layered zinc sulfide (LZnS) was synthesized successfully via hydrothermal method. • We prepare PMMA/LZnS nanocomposites by in situ bulk polymerization of MMA. • PMMA/LZnS nanocomposites were investigated by TGA, DSC, MCC, UV–vis and PL test. • The thermal stability, flame retardant and optical properties of PMMA are improved. - Abstract: Layered zinc sulfide (LZnS) was synthesized successfully via hydrothermal method and poly(methyl methacrylate) (PMMA)/layered zinc sulfide nanocomposites were obtained by in situ bulk polymerization of methyl methacrylate (MMA). X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the as-synthesized layered zinc sulfide and PMMA/layered zinc sulfide nanocomposites. Microscale combustion calorimeter (MCC), differential scanning calorimeter (DSC) and thermogravimetric analysis (TGA) were used to test the thermal properties of the composites. Ultraviolet visible (UV–vis) transmittance spectra and photoluminence (PL) spectra were obtained to investigate the optical properties of the composites. From the results, the thermal degradation temperature is increased by 20–50 °C, the peak of heat release rate (pHRR) and total heat release (THR) are both decreased by above 30%, and the photoluminence intensity is enhanced with the increasing loading of layered zinc sulfide.

  12. Poly(methyl methacrylate)/layered zinc sulfide nanocomposites: Preparation, characterization and the improvements in thermal stability, flame retardant and optical properties

    International Nuclear Information System (INIS)

    Wang, Biao; Zhou, Keqing; Jiang, Saihua; Shi, Yongqian; Wang, Bibo; Gui, Zhou; Hu, Yuan

    2014-01-01

    Highlights: • Layered zinc sulfide (LZnS) was synthesized successfully via hydrothermal method. • We prepare PMMA/LZnS nanocomposites by in situ bulk polymerization of MMA. • PMMA/LZnS nanocomposites were investigated by TGA, DSC, MCC, UV–vis and PL test. • The thermal stability, flame retardant and optical properties of PMMA are improved. - Abstract: Layered zinc sulfide (LZnS) was synthesized successfully via hydrothermal method and poly(methyl methacrylate) (PMMA)/layered zinc sulfide nanocomposites were obtained by in situ bulk polymerization of methyl methacrylate (MMA). X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the as-synthesized layered zinc sulfide and PMMA/layered zinc sulfide nanocomposites. Microscale combustion calorimeter (MCC), differential scanning calorimeter (DSC) and thermogravimetric analysis (TGA) were used to test the thermal properties of the composites. Ultraviolet visible (UV–vis) transmittance spectra and photoluminence (PL) spectra were obtained to investigate the optical properties of the composites. From the results, the thermal degradation temperature is increased by 20–50 °C, the peak of heat release rate (pHRR) and total heat release (THR) are both decreased by above 30%, and the photoluminence intensity is enhanced with the increasing loading of layered zinc sulfide

  13. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

    2012-01-31

    In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

  14. Development of a lithium fluoride zinc sulfide based neutron multiplicity counter

    Science.gov (United States)

    Cowles, Christian; Behling, Spencer; Baldez, Phoenix; Folsom, Micah; Kouzes, Richard; Kukharev, Vladislav; Lintereur, Azaree; Robinson, Sean; Siciliano, Edward; Stave, Sean; Valdez, Patrick

    2018-04-01

    The feasibility of a full-scale lithium fluoride zinc sulfide (LiF/ZnS) based neutron multiplicity counter has been demonstrated. The counter was constructed of modular neutron detecting stacks that each contain five sheets of LiF/ZnS interleaved between six sheets of wavelength shifting plastic with a photomultiplier tube on each end. Twelve such detector stacks were placed around a sample chamber in a square arrangement with lithiated high-density polyethylene blocks in the corners to reflect high-energy neutrons and capture low-energy neutrons. The final system design was optimized via modeling and small-scale test. Measuring neutrons from a 252Cf source, the counter achieved a 36% neutron detection efficiency (ɛ) and an 11 . 7 μs neutron die-away time (τ) for a doubles figure-of-merit (ɛ2 / τ) of 109. This is the highest doubles figure-of-merit measured to-date for a 3He-free neutron multiplicity counter.

  15. Sulfidation treatment of molten incineration fly ashes with Na2S for zinc, lead and copper resource recovery.

    Science.gov (United States)

    Kuchar, D; Fukuta, T; Onyango, M S; Matsuda, H

    2007-04-01

    The present study focuses on the conversion of heavy metals involved in molten incineration fly ashes to metal sulfides which could be thereafter separated by flotation. The sulfidation treatment was carried out for five molten incineration fly ashes (Fly ash-A to Fly ash-E) by contacting each fly ash with Na(2)S solution for a period of 10 min to 6h. The initial molar ratio of S(2-) to Me(2+) was adjusted to 1.20. The conversion of heavy metals to metal sulfides was evaluated by measuring the S(2-) residual concentrations using an ion selective electrode. The formation of metal sulfides was studied by XRD and SEM-EDS analyses. In the case of Fly ash-A to Fly ash-D, more than 79% of heavy metals of zinc, lead and copper was converted to metal sulfides within the contacting period of 0.5h owing to a fast conversion of metal chlorides to metal sulfides. By contrast, the conversion of about 35% was achieved for Fly ash-E within the same contacting period, which was attributed to a high content of metal oxides. Further, the S(2-) to Me(2+) molar ratio was reduced to 1.00 to minimize Na(2)S consumption and the conversions obtained within the contacting period of 0.5h varied from 76% for Fly ash-D to 91% for Fly ash-C. Finally, soluble salts such as NaCl and KCl were removed during the sulfidation treatment, which brought about a significant enrichment in metals content by a factor varying from 1.5 for Fly ash-D to 4.9 for Fly ash-A.

  16. Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

    Science.gov (United States)

    Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

    Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

  17. Synthesis and characterization of zinc oxide thin films prepared by ...

    African Journals Online (AJOL)

    Zinc oxide thin films were prepared with ammonia/ammonium chloride buffer as the reaction moderating agent in the chemical bath deposition technique. An observable color change during the reaction due to variations in the reactants concentration indicated the existence of the cupric (CuO) and cuprous (Cu2O) oxides ...

  18. Friction behaviour of anodic oxide film on aluminum impregnated with molybdenum sulfide compounds

    Energy Technology Data Exchange (ETDEWEB)

    Maejima, M.; Saruwatari, K. [Fujikura Ltd., Tokyo (Japan); Takaya, M. [Faculty of Engineering, Chiba Institute of Technology 17-1, Tsudanuma 2-Chome, 275-0016, Narasino-shi Chiba (Japan)

    2000-10-23

    In order to improve the lubricity and wear resistance of aluminum anodic oxide films, it is necessary to ensure the film layers are dense to prevent cracking, and to harden the films as well as reduce the shear stress of the film surfaces. From this view point, lubricious, hard anodic oxide films have been studied in the past, but fully satisfactory results have yet to be realized. In this paper, we report on our study of the re-anodizing of anodic oxide film in an aqueous solution of (NH)MoS. Molybdenum sulfide and compounds filled the 20-nm diameter pores of the film, creating internal stress which compressed the film, suppressing the occurrence of cracks and reducing the friction coefficient. (orig.)

  19. Europium and samarium doped calcium sulfide thin films grown by PLD

    International Nuclear Information System (INIS)

    Christoulakis, S.; Suchea, M; Katsarakis, N.; Koudoumas, E

    2007-01-01

    Europium and samarium doped calcium sulfide thin films (CaS:Eu,Sm) with different thickness were prepared by the pulsed laser deposition technique using sintered targets. A typical homemade deposition chamber and XeCl excimer laser (308 nm) were employed and the films were deposited in helium atmosphere onto silicon and corning glass substrates. Structural investigations carried out by X-ray diffraction and atomic force microscopy showed a strong influence of the deposition parameters on the film properties. The films grown had an amorphous or polycrystalline structure depending on growth temperature and the number of pulses used, the same parameters affecting the film roughness, the grain shape and dimensions, the film thickness and the optical transmittance. This work indicates that pulsed laser deposition can be a suitable technique for the preparation of CaS:Eu,Sm thin films, the film characteristics being controlled by the growth conditions

  20. Hydrogen evolution at nanoporous gold/tungsten sulfide composite film and its optimization

    DEFF Research Database (Denmark)

    Xiao, Xinxin; Engelbrekt, Christian; Li, Zheshen

    2015-01-01

    Development of efficient and economical electrochemical systems for water splitting is a key part of renewable energy technology. Amorphous films of tungsten sulfide have been deposited by electrochemical reduction of tetrathiotungstate ions (WS42-) on dealloyed nanoporous gold (NPG) for electroc......-term stability. The measured Tafel slope of 74 mV dec-1 implies an underlying Volmer-Heyrovsky HER mechanism....

  1. A DNA biosensor for molecular diagnosis of Aeromonas hydrophila using zinc sulfide nanospheres

    Directory of Open Access Journals (Sweden)

    M. Negahdary

    2017-07-01

    Full Text Available Today, identification of pathogenic bacteria using modern and accurate methods is inevitable. Integration in electrochemical measurements with nanotechnology has led to the design of efficient and sensitive DNA biosensors against bacterial agents. Here, efforts were made to detect Aeromonas hydrophila using aptamers as probes and zinc sulfide (ZnS nanospheres as signal enhancers and electron transfer facilitators. After modification of the working electrode area (in a screen-printed electrode with ZnS nanospheres through electrodeposition, the coated surface of a modified electrode with ZnS nanospheres was investigated through scanning electron microscopy (SEM. The size of synthesized ZnS nanospheres was estimated at about 20–50 nm and their shape was in the form of porous plates in microscopic observations. All electrochemical measurements were performed using cyclic voltammetry (CV, electrochemical impedance spectroscopy (EIS, and constant potential amperometry (CPA techniques. The designed DNA biosensor was able to detect deoxyribonucleic acid (DNA of Aeromonas hydrophila in the range 1.0  ×  10−4 to 1.0  ×  10−9 mol L−1; the limit of detection (LOD in this study was 1  ×  10−13 mol L−1. This DNA biosensor showed satisfactory thermal and pH stability. Reproducibility for this DNA biosensor was measured and the relative standard deviation (RSD of the performance of this DNA biosensor was calculated as 5 % during 42 days.

  2. Solvothermal synthesis of Zinc sulfide decorated Graphene (ZnS/G) nanocomposites for novel Supercapacitor electrodes

    International Nuclear Information System (INIS)

    Ramachandran, Rajendran; Saranya, Murugan; Kollu, Pratap; Raghupathy, Bala P.C.; Jeong, Soon Kwan; Grace, Andrews Nirmala

    2015-01-01

    Highlights: • ZnS/G nanocomposites were prepared by a simple solvothermal process. • Electrochemical measurements were carried out in 6 M KOH electrolyte. • Cyclic voltammetry showed the excellent capacitive behavior of the composites. • A specific capacitance of 197.1 F/g was observed for ZnS/G-60 nanocomposites. - Abstract: Zinc sulfide decorated graphene nanocomposites are synthesized by a facile solvothermal approach and the prepared composites are analyzed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), High Resolution Transmission electron microscopy (HRTEM), Fourier transform infrared (FTIR), Ultraviolet visible spectroscopy (UV), Photoluminescence spectroscopy (PL) and Raman spectrum. Results show the effective reduction of graphene oxide (GO) to graphene and decoration of ZnS nanoparticles on graphene sheets. Towards supercapacitor applications, the electrochemical measurements of different electrodes are performed in 6 M KOH electrolyte. A series of composites with different loadings of graphene is synthesized and tested for its electrochemical properties. The specific capacitance of the electrodes are evaluated from cyclic voltammetry (CV) studies and a maximum specific capacitance of 197.1 F/g is achieved in ZnS/G-60 electrode (60 indicates the weight ratio of GO) at scan rate of 5 mV s"−"1. A capacitance retention of about 94.1% is observed even after 1000 cycles for ZnS/G-60 electrode, suggesting the long time cyclic stability of the composite electrode. Galvanostatic charge–discharge curves show the highly reversible process of ZnS/G-60 electrode. Electrochemical Impedance Spectrum (EIS) shows a high conductivity of composite electrode suggesting that the composites are good candidates for energy storage.

  3. Pure zinc sulfide quantum dot as highly selective luminescent probe for determination of hazardous cyanide ion

    International Nuclear Information System (INIS)

    Shamsipur, Mojtaba; Rajabi, Hamid Reza

    2014-01-01

    A rapid and simple fluorescence method is presented for selective and sensitive determination of hazardous cyanide ion in aqueous solution based on functionalized zinc sulfide (ZnS) quantum dot (QD) as luminescent prob. The ultra-small ZnS QDs were synthesized using a chemical co-precipitation method in the presence of 2-mercaptoethanol (ME) as an efficient capping agent. The prepared pure ZnS QDs was applied as an optical sensor for determination of cyanide ions in aqueous solutions. ZnS nanoparticles have exhibited a strong fluorescent emission at about 424 nm. The fluorescence intensity of QDs is linearly proportional to the cyanide ion concentration in the range 2.44 × 10 −6 to 2.59 × 10 −5 M with a detection limit of 1.70 × 10 −7 M at pH 11. The designed fluorescent sensor possesses remarkable selectivity for cyanide ion over other anions such as Cl − , Br − , F − , I − , IO 3 − , ClO 4 − , BrO 3 − , CO 3 2− , NO 2 − , NO 3 − , SO 4 2− , S 2 O 4 2− , C 2 O 4 2− , SCN − , N 3 − , citrate and tartarate with negligible influences on the cyanide detection by fluorescence spectroscopy. - Highlights: • Preparation of functionalized ZnS quantum dots in aqueous media • Highly selective quantum dot based luminescent probe for determination of cyanide • Fast and sensitive determination of hazardous CN − by fluorescence quenching

  4. Pure zinc sulfide quantum dot as highly selective luminescent probe for determination of hazardous cyanide ion

    Energy Technology Data Exchange (ETDEWEB)

    Shamsipur, Mojtaba, E-mail: mshamsipur@yahoo.com [Department of Chemistry, Razi University, Kermanshah (Iran, Islamic Republic of); Rajabi, Hamid Reza, E-mail: h.rajabi@mail.yu.ac.ir [Chemistry Department, Yasouj University, Yasouj 75918-74831 (Iran, Islamic Republic of)

    2014-03-01

    A rapid and simple fluorescence method is presented for selective and sensitive determination of hazardous cyanide ion in aqueous solution based on functionalized zinc sulfide (ZnS) quantum dot (QD) as luminescent prob. The ultra-small ZnS QDs were synthesized using a chemical co-precipitation method in the presence of 2-mercaptoethanol (ME) as an efficient capping agent. The prepared pure ZnS QDs was applied as an optical sensor for determination of cyanide ions in aqueous solutions. ZnS nanoparticles have exhibited a strong fluorescent emission at about 424 nm. The fluorescence intensity of QDs is linearly proportional to the cyanide ion concentration in the range 2.44 × 10{sup −6} to 2.59 × 10{sup −5} M with a detection limit of 1.70 × 10{sup −7} M at pH 11. The designed fluorescent sensor possesses remarkable selectivity for cyanide ion over other anions such as Cl{sup −}, Br{sup −}, F{sup −}, I{sup −}, IO{sub 3}{sup −}, ClO{sub 4}{sup −}, BrO{sub 3}{sup −}, CO{sub 3}{sup 2−}, NO{sub 2}{sup −}, NO{sub 3}{sup −}, SO{sub 4}{sup 2−}, S{sub 2}O{sub 4}{sup 2−}, C{sub 2}O{sub 4}{sup 2−}, SCN{sup −}, N{sub 3}{sup −}, citrate and tartarate with negligible influences on the cyanide detection by fluorescence spectroscopy. - Highlights: • Preparation of functionalized ZnS quantum dots in aqueous media • Highly selective quantum dot based luminescent probe for determination of cyanide • Fast and sensitive determination of hazardous CN{sup −} by fluorescence quenching.

  5. Development of a lithium fluoride zinc sulfide based neutron multiplicity counter

    Energy Technology Data Exchange (ETDEWEB)

    Cowles, Christian; Behling, Spencer; Baldez, Phoenix; Folsom, Micah; Kouzes, Richard; Kukharev, Vladislav; Lintereur, Azaree; Robinson, Sean; Siciliano, Edward; Stave, Sean; Valdez, Patrick

    2018-04-01

    Past 3He shortages led to investigations into replacement options for neutron detectors in systems that previously used 3He-based technologies. The goal of this research was to investigate the feasibility of a full-scale lithium fluoride with silver activated zinc sulfide (LiF/ZnS) based neutron multiplicity counter. The LiF/ZnS based neutron multiplicity counter (LiNMC) was developed based on an iterative process between modeling and experimental measurements. Each active region of the LiNMC contains five sheets of LiF/ZnS sandwiched between six sheets of wavelength shifting plastic to form neutron detection stacks. The wavelength shifted scintillation light was collected by photomultiplier tubes located on each end of the stacks. Twelve such detector stacks were placed around a sample chamber in a square arrangement with lithiated high density polyethylene blocks in the corners to reflect high energy neutrons and capture low energy neutrons. Preliminary calibration with a 252Cf neutron source showed that the LiNMC was able to achieve 36% neutron detection efficiency (ε) and an 11.7 μs neutron die-away time (τ) for a doubles Figure-of-merit (ε2/ τ) of 109. This is the highest doubles Figure-of-merit performance measured to-date for a 3He-free neutron multiplicity counter system. By the end of this project, the LiNMC’s basic components were integrated into a single laboratory scale system capable of proof-of-concept measurements.

  6. Acid production potentials of massive sulfide minerals and lead-zinc mine tailings: a medium-term study.

    Science.gov (United States)

    Çelebi, Emin Ender; Öncel, Mehmet Salim; Kobya, Mehmet

    2018-01-01

    Weathering of sulfide minerals is a principal source of acid generation. To determine acid-forming potentials of sulfide-bearing materials, two basic approaches named static and kinetic tests are available. Static tests are short-term, and easily undertaken within a few days and in a laboratory. In contrast, kinetic tests are long-term procedures and mostly carried out on site. In this study, experiments were conducted over a medium-term period of 2 months, not as short as static tests and also not as long as kinetic tests. As a result, pH and electrical conductivity oscillations as a function of time, acid-forming potentials and elemental contents of synthetically prepared rainwater leachates of massive sulfides and sulfide-bearing lead-zinc tailings from abandoned and currently used deposition areas have been determined. Although the lowest final pH of 2.70 was obtained in massive pyrite leachate, massive chalcopyrite leachate showed the highest titrable acidity of 1.764 g H 2 SO 4 /L. On the other hand, a composite of currently deposited mine tailings showed no acidic characteristic with a final pH of 7.77. The composite abandoned mine tailing leachate had a final pH of 6.70, close to the final pH of massive galena and sphalerite leachates, and produced a slight titrable acidity of 0.130 g H 2 SO 4 /L.

  7. Nanoparticles of zinc sulfide doped with manganese, nickel and copper as nanophotocatalyst in the degradation of organic dyes

    International Nuclear Information System (INIS)

    Pouretedal, Hamid Reza; Norozi, Abbas; Keshavarz, Mohammad Hossein; Semnani, Abolfazl

    2009-01-01

    Nanoparticles of zinc sulfide as undoped and doped with manganese, nickel and copper were used as photocatalyst in the photodegradation of methylene blue and safranin as color pollutants. Photoreactivity of doped zinc sulfide was varied with dopant, mole fraction of dopant to zinc ion, pH of solution, dosage of photocatalyst and concentration of dye. The characterization of nanoparticles was studied using X-ray powder diffraction (XRD) patterns and UV-vis spectra. The maximum degradation efficiency was obtained in the presence of Zn 0.98 Mn 0.02 S, Zn 0.94 Ni 0.06 S and Zn 0.90 Cu 0.10 S as nanophotocatalyst. The effect of dosage of photocatalyst was studied in the range of 20-250 mg/L. It was seen that 150.0 mg/L of photocatacyst is an optimum value for the dosage of photocatalyst. The most degradation efficiency was obtained in alkaline pH of 11.0 with study of photodegradation in pH amplitude of 2-12. The degradation efficiency was decreased in dye concentrations above of 5.0 mg/L for methylene blue and safranin dyes. In the best conditions, the degradation efficiency was obtained 87.3-95.6 and 85.4-93.2 for methylene blue and safranin, respectively

  8. Chemical Annealing of Zinc Tetraphenylporphyrin Films: Effects on Film Morphology and Organic Photovoltaic Performance

    KAUST Repository

    Trinh, Cong; Whited, Matthew T.; Steiner, Andrew; Tassone, Christopher J.; Toney, Michael F.; Thompson, Mark E.

    2012-01-01

    We present a chemical annealing process for organic thin films. In this process, a thin film of a molecular material, such as zinc tetraphenylporphyrin (ZnTPP), is exposed to a vapor of nitrogen-based ligand (e.g., pyrazine, pz, and triazine, tz

  9. Sulfide precursor concentration and lead source effect on PbS thin films properties

    International Nuclear Information System (INIS)

    Beddek, L.; Messaoudi, M.; Attaf, N.; Aida, M.S.; Bougdira, J.

    2016-01-01

    Lead sulfide (PbS) thin films were synthesized using chemical bath deposition (CBD). Bath solutions are formed of various concentrations of thiourea, sulfide source, ranged from 0.6 to 1.2 M and two different salts as Pb source (lead acetate and lead nitrate). From the growth mechanism, we inferred that PbS is formed through the ion by ion process when using acetate lead source, while, using nitrate source yields to films growth through the complex-decomposition process. Due to the difference in the involved growth process, lead acetate produces films with larger crystallite size (from 4 to 16 nm), smooth and dense films. However, lead nitrate produces rough films with smaller crystallite size (from 1 to 4 nm). Increasing the thiourea concentration results in crystallinity improvement when using lead acetate and, oppositely, in crystallinity degradation when using lead nitrate. Due to the quantum effect caused by the small crystallite sizes, the films optical gap is varied from 0.5 to 0.9 eV. - Highlights: • PbS thin films were synthesized by chemical bath deposition. • Ion by ion is the growth process when using the acetate lead source. • Deposition process is by complex-decomposition when using nitrate source. • Lead acetate yields to dense films with larger crystallite size. • Lead nitrate produces rough films with smaller crystallite size.

  10. Sulfide precursor concentration and lead source effect on PbS thin films properties

    Energy Technology Data Exchange (ETDEWEB)

    Beddek, L.; Messaoudi, M.; Attaf, N. [Laboratoire Couche Minces et Interfaces, Université frères Mentouri Constantine, 25000, Constantine (Algeria); Aida, M.S., E-mail: aida_salah2@yahoo.fr [Laboratoire Couche Minces et Interfaces, Université frères Mentouri Constantine, 25000, Constantine (Algeria); Bougdira, J. [Université de Lorraine, Institut Jean Lamour UMR 7198, Vandoeuvre 54506 (France)

    2016-05-05

    Lead sulfide (PbS) thin films were synthesized using chemical bath deposition (CBD). Bath solutions are formed of various concentrations of thiourea, sulfide source, ranged from 0.6 to 1.2 M and two different salts as Pb source (lead acetate and lead nitrate). From the growth mechanism, we inferred that PbS is formed through the ion by ion process when using acetate lead source, while, using nitrate source yields to films growth through the complex-decomposition process. Due to the difference in the involved growth process, lead acetate produces films with larger crystallite size (from 4 to 16 nm), smooth and dense films. However, lead nitrate produces rough films with smaller crystallite size (from 1 to 4 nm). Increasing the thiourea concentration results in crystallinity improvement when using lead acetate and, oppositely, in crystallinity degradation when using lead nitrate. Due to the quantum effect caused by the small crystallite sizes, the films optical gap is varied from 0.5 to 0.9 eV. - Highlights: • PbS thin films were synthesized by chemical bath deposition. • Ion by ion is the growth process when using the acetate lead source. • Deposition process is by complex-decomposition when using nitrate source. • Lead acetate yields to dense films with larger crystallite size. • Lead nitrate produces rough films with smaller crystallite size.

  11. Combinatorial study of zinc tin oxide thin-film transistors

    Science.gov (United States)

    McDowell, M. G.; Sanderson, R. J.; Hill, I. G.

    2008-01-01

    Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO :SnO2 ratio of the film varies as a function of position on the sample, from pure ZnO to SnO2, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2to12cm2/Vs, with two peaks in mobility in devices at ZnO fractions of 0.80±0.03 and 0.25±0.05, and on/off ratios as high as 107. Transistors composed predominantly of SnO2 were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

  12. Zinc oxide films prepared by spray pyrolysis

    Directory of Open Access Journals (Sweden)

    Maciąg Andrzej

    2017-01-01

    Full Text Available In this work we developed and tested spray pyrolysis system for layers deposition. In the system we have used ultrasonic apparatus (nebulizator as a sprayer. A zinc nitrate aqueous solution has been used as a precursor solution. The idea of the method is the decomposition of nitrate on a hot substrate according to the reaction Zn(NO32 → ZnO +2 NO2 +1/2O2. The layers were grown on glass, (001Si and KCl substrates at the temperatures 300 – 500°C. The thickness of the obtained layers was in the range 50 – 500 nm, depending on the growth time and rate. The influence of substrate temperature on the morphology of the layers has been studied by SEM method. The energy gap of the layers was found to be the range of 3.26-3.3 eV from their absorption spectra.

  13. Influence of deposition time on the properties of chemical bath deposited manganese sulfide thin films

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2010-12-01

    Full Text Available Manganese sulfide thin films were chemically deposited from an aqueous solution containing manganese sulfate, sodium thiosulfate and sodium tartrate. The influence of deposition time (2, 3, 6 and 8 days on the properties of thin films was investigated. The structure and surface morphology of the thin films were studied by X-ray diffraction and atomic force microscopy, respectively. In addition, in order to investigate the optical properties of the thin films, the UV-visible spectrophotometry was used. The XRD results indicated that the deposited MnS2 thin films exhibited a polycrystalline cubic structure. The number of MnS2 peaks on the XRD patterns initially increased from three to six peaks and then decreased to five peaks, as the deposition time was increased from 2 to 8 days. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the deposition time.

  14. Nanoporous zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ghimpu, L.; Lupan, O.; Popescu, L.; Tiginyanu, I.M.

    2011-01-01

    In this paper we demonstrate an inexpensive approach for the fabrication of nanoporous zinc oxide films by using magnetron sputtering. Study of the structural properties proves the crystallographic perfection of porous nanostructures and the possibility of its controlling by adjusting the technological parameters in the growth process. The XRD pattern of nanoporous ZnO films exhibits high intensity of the peaks relative to the background signal which is indicative of the ZnO hexagonal phase and a good crystallinity of the samples grown by magnetron sputtering.

  15. Monocrystalline zinc oxide films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Wachnicki, L.; Krajewski, T.; Luka, G.; Witkowski, B.; Kowalski, B.; Kopalko, K.; Domagala, J.Z.; Guziewicz, M.; Godlewski, M.; Guziewicz, E.

    2010-01-01

    In the present work we report on the monocrystalline growth of (00.1) ZnO films on GaN template by the Atomic Layer Deposition technique. The ZnO films were obtained at temperature of 300 o C using dietylzinc (DEZn) as a zinc precursor and deionized water as an oxygen precursor. High resolution X-ray diffraction analysis proves that ZnO layers are monocrystalline with rocking curve FWHM of the 00.2 peak equals to 0.07 o . Low temperature photoluminescence shows a sharp and bright excitonic line with FWHM of 13 meV.

  16. Antimony sulfide thin films prepared by laser assisted chemical bath deposition

    International Nuclear Information System (INIS)

    Shaji, S.; Garcia, L.V.; Loredo, S.L.; Krishnan, B.

    2017-01-01

    Highlights: • Antimony sulfide thin films were prepared by normal CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • These films were photoconductive. - Abstract: Antimony sulfide (Sb_2S_3) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb_2S_3 thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV–vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb_2S_3 thin films for optoelectronic applications.

  17. Antimony sulfide thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); CIIDIT—Universidad Autónoma de Nuevo León, Apodaca, Nuevo León (Mexico); Garcia, L.V. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); Loredo, S.L. [Centro de Investigación en Materiales Avanzados (CIMAV), Unidad Monterrey, PIIT, Apodaca, Nuevo León (Mexico); Krishnan, B. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); CIIDIT—Universidad Autónoma de Nuevo León, Apodaca, Nuevo León (Mexico); and others

    2017-01-30

    Highlights: • Antimony sulfide thin films were prepared by normal CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • These films were photoconductive. - Abstract: Antimony sulfide (Sb{sub 2}S{sub 3}) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb{sub 2}S{sub 3} thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV–vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb{sub 2}S{sub 3} thin films for optoelectronic applications.

  18. Electrodeposition of zinc-doped silane films for corrosion protection of mild steels

    International Nuclear Information System (INIS)

    Wu Liankui; Hu Jiming; Zhang Jianqing

    2012-01-01

    Highlights: ► Metallic zinc is doped into organosilane films by one-step electrodeposition. ► The composite films exhibit the improved corrosion resistance of mild steels. ► Zinc-doping provides additional cathodic protection to the mild steels. - Abstract: Organosilane/zinc composite films are prepared by one-step electrodeposition onto cold-rolled steels for corrosion protection. Electrochemical impedance spectroscopy measurement, bulk solution immersion and wet heat tests all show that the composite films have improved corrosion performance. X-ray photoelectron spectroscopy measurement suggests the successful encapsulation of metallic zinc. The embedding of metallic zinc results in negative shift in open-circuit potential of the film-covered electrodes. Such cathodic protection effect given by the metallic zinc provides the improved corrosion resistance of the composite films.

  19. Synthesis and characterization of rhodium sulfide nanoparticles and thin films

    International Nuclear Information System (INIS)

    Sosibo, Ndabenhle M.; Revaprasadu, Neerish

    2008-01-01

    The synthesis and characterization of a rhodium complex, [Rh(S 2 CNEt 2 ) 2 ] is described. The complex was thermolysed at a high temperature (280 deg. C) in the presence of capping agent, hexadecylamine (HDA) to form Rh 2 S 3 nanoparticles. Rod-shaped Rh 2 S 3 nanoparticles with an average length of 26.7 nm and an average breadth of 7.8 nm were synthesized. The complex was also used as a single molecule precursor for the deposition of Rh 2 S 3 thin films on a glass substrate at 350 deg. C and 450 deg. C using the Aerosol Assisted Chemical Vapour Deposition (AACVD) technique. The resultant thin films showed temperature dependent morphologies and showed (0 2 2), (4 1 1) and (6 1 1) lattice planes characteristic of to the orthorhombic Rh 2 S 3 phase. X-ray diffraction and scanning electron microscopy techniques were used to characterize the films

  20. Precipitation and growth of zinc sulfide nanoparticles in the presence of thiol-containing natural organic ligands.

    Science.gov (United States)

    Lau, Boris L T; Hsu-Kim, Heileen

    2008-10-01

    In sulfidic aquatic systems, metal sulfides can control the mobility and bioavailability of trace metal pollutants such as zinc, mercury, and silver. Nanoparticles of ZnS and other metal sulfides are known to exist in oxic and anoxic waters. However, the processes that lead to their persistence in the aquatic environment are relatively unknown. The objective of this study was to evaluate the importance of dissolved natural organics in stabilizing nanoparticulate ZnS that precipitates under environmentally relevant conditions. Precipitation and growth of ZnS particles were investigated in the presence of dissolved humic acid and low-molecular weight organic acids that are prevalent in sediment porewater. Dynamic light scattering was used to monitor the hydrodynamic diameter of particles precipitating in laboratory solutions. Zn speciation was also measured by filtering the ZnS solutions (precipitation experiments and not to the dissolved organic ligands. X-ray photoelectron spectroscopy and electron microscopy were used to confirm that amorphous particles containing Zn and S were precipitating in the suspensions. Observed growth rates of ZnS particles varied by orders of magnitude, depending on the type and concentration of organic ligand in solution. In the presence of humic acid and thiol-containing ligands (cysteine, glutathione, and thioglycolate), observed growth rates decreased by 1-3 orders of magnitude relative to controls without the ligands. In contrast, growth rates of the particles were consistently within 1 order of magnitude of the ligand-free control when oxygen- and amine-containing ligands (oxalate, serine, and glycolate) were present Furthermore, particle growth rates decreased with an increase in thiol concentration and increased with NaNO3 electrolyte concentration. These studies suggest that specific surface interactions with thiol-containing organics may be one factor that contributes to the persistence of naturally occurring and anthropogenic

  1. Solution growth, characterization and applications of zinc sulphide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ndukwe, I C [School of Physical Sciences, Abia State University, Uturu, Abia State (Nigeria)

    1996-04-29

    Zinc sulphide (ZnS) thin films were successfully deposited on glass substrates under varying deposition conditions using the electroless or solution growth technique. The film properties investigated include their transmittance/reflectance/absorbance spectra, bandgap, optical constants, and thicknesses. Films grown under certain parametric conditions were found to exhibit high transmittance (64-98%), low absorbance, and low reflectance in the ultraviolet (uv)/visible/near infrared (nir) regions up to 1.00 {mu}m. Those obtained under other conditions exhibited high transmittance (78-98%) and low absorbance (0.01-0.1) in the uv/visible regions but low transmittance (30-37) and high absorbance (0.56) in the nir region. These characteristics revealed their suitability for various solar device applications. Bandgap range E{sub g}=3.7-3.8 eV and thickness range t=0.07 - 0.73 {mu}m were obtained.

  2. Intrinsic defect oriented visible region absorption in zinc oxide films

    Science.gov (United States)

    Rakhesh, V.; Shankar, Balakrishnan

    2018-05-01

    Zinc Oxide films were deposited on the glass substrate using vacuum arc sputtering technology. Films were prepared in oxygen ambience for 10mA and 15 mA deposition current separately. The UV-Visible spectroscopy of the samples showed that both samples possess sharp absorption near 3.5eV which is the characteristic band gap absorption energy of ZnO films. The absorption coefficient were calculated for the samples and the (αℎϑ)2 vs energy plot is drawn. The plot suggested that in addition to the sharp band edge absorption, the sample prepared at 10mA deposition current showed sharp absorption edge near 1.51eV and that at 15 mA showed absorption edge near 1.47eV. This refers to the presence of an intrinsic defect level which is likely to be deep in the band gap.

  3. Influence of sulfidation treatment on the structure and tribological properties of nitrogen-doped diamond-like carbon films

    International Nuclear Information System (INIS)

    Zeng Qunfeng; Dong Guangneng; Xie Youbai

    2008-01-01

    The nitrogen-doped diamond-like carbon (DLC) films were deposited on high speed steel (HSS) substrates in the direct current unbalanced magnetron sputtering system. Sulphurized layer was formed on the surface of DLC films by means of liquid sulfidation in the intermixture of urea and thiourea solution in order to improve the tribological properties of DLC films. The influence of sulfidation treatment on the structure and tribological properties of DLC films was investigated in this work. The structure and wear surface morphology of DLC films were analyzed by Raman spectroscopy, XPS and SEM, respectively. It reveals that the treated films are smooth and uniform; and sulfur atoms are bonded chemically. The treated films have broader distribution of Raman spectra in the range of 1000-1800 cm -1 and higher I D /I G ratio than the untreated films as a result of the appearance of the crystalline graphite structure after the sulfidation treatment. It is showed that the sp 2 relative content increase in the treated films from the XPS measurement. The Raman results are consistent with the XPS results. The tribological properties of DLC films were investigated using a ball-on-disk rotating friction and wear tester under dry friction conditions. It is found that the sulfidation concentration plays an important part in the tribological properties of the treated DLC films. The results showed the treated films with low sulfidation concentration have a lower friction coefficient (0.1) than the treated films with high sulfidation concentration (0.26) and the untreated films (0.27) under the same friction testing conditions, which can be attributed to both the presence of sulfur-containing materials and the forming of the mechanical alloyed layer on the wear surface. Adding the dry nitrogen to the sliding surface in the testing system helps the friction coefficient of the treated films with low sulfidation concentration to decrease to 0.04 further in this work. On the basis of the

  4. Effects of different annealing atmospheres on the properties of cadmium sulfide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yücel, E., E-mail: dr.ersinyucel@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Kahraman, S. [Department of Metallurgy and Material Engineering, Faculty of Technology, Mustafa Kemal University, 31034 Hatay (Turkey); Güder, H.S. [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey)

    2015-08-15

    Graphical abstract: The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. - Highlights: • Compactness and smoothness of the films were enhanced after sulfur annealing. • Micro-strain values of some films were improved after sulfur annealing. • Dislocation density values of some films were improved after sulfur annealing. • Band gap values of the films were improved after sulfur annealing. - Abstract: Cadmium sulfide (CdS) thin films were prepared on glass substrates by using chemical bath deposition (CBD) technique. The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. Compactness and smoothness of the films (especially for pH 10.5 and 11) enhanced after sulfur annealing. pH value of the precursor solution remarkably affected the roughness, uniformity and particle sizes of the films. Based on the analysis of X-ray diffraction (XRD) patterns of the films, micro-strain and dislocation density values of the sulfur-annealed films (pH 10.5 and 11) were found to be lower than those of air-annealed films. Air-annealed films (pH 10.5, 11 and 11.5) exhibited higher transmittance than sulfur-annealed films in the wavelength region of 550–800 nm. Optical band gap values of the films were found between 2.31 eV and 2.36 eV.

  5. Thin films of copper antimony sulfide: A photovoltaic absorber material

    Energy Technology Data Exchange (ETDEWEB)

    Ornelas-Acosta, R.E. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Shaji, S. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450 (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León (Mexico)

    2015-01-15

    Highlights: • CuSbS{sub 2} thin films were prepared by heating Sb{sub 2}S{sub 3}/Cu layers. • Analyzed the structure, composition, optical, and electrical properties. • PV structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag were formed at different conditions. • The PV parameters (J{sub sc}, V{sub oc}, and FF) were evaluated from the J–V characteristics. • J{sub sc}: 0.52–3.20 mA/cm{sup 2}, V{sub oc}:187–323 mV, FF: 0.27–0.48 were obtained. - Abstract: In this work, we report preparation and characterization of CuSbS{sub 2} thin films by heating glass/Sb{sub 2}S{sub 3}/Cu layers and their use as absorber material in photovoltaic structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag. The Sb{sub 2}S{sub 3} thin films of 600 nm were prepared by chemical bath deposition on which copper thin films of 50 nm were thermally evaporated, and the glass/Sb{sub 2}S{sub 3}/Cu multilayers were heated in vacuum at different temperatures. X-ray diffraction analysis showed the formation of orthorhombic CuSbS{sub 2} after heating the precursor layers. Studies on identification and chemical state of the elements were done using X-ray photoelectron spectroscopy. The optical band gap of the CuSbS{sub 2} thin films was 1.55 eV and the thin films were photoconductive. The photovoltaic parameters of the devices using CuSbS{sub 2} as absorber and CdS as window layer were evaluated from the J–V curves, yielding J{sub sc}, V{sub oc}, and FF values in the range of 0.52–3.20 mA/cm{sup 2}, 187–323 mV, and 0.27–0.48, respectively, under illumination of AM1.5 radiation.

  6. Synthesis and characterization of rhodium sulfide nanoparticles and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sosibo, Ndabenhle M. [Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886 (South Africa); Revaprasadu, Neerish [Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886 (South Africa)], E-mail: nrevapra@pan.uzulula.za

    2008-05-15

    The synthesis and characterization of a rhodium complex, [Rh(S{sub 2}CNEt{sub 2}){sub 2}] is described. The complex was thermolysed at a high temperature (280 deg. C) in the presence of capping agent, hexadecylamine (HDA) to form Rh{sub 2}S{sub 3} nanoparticles. Rod-shaped Rh{sub 2}S{sub 3} nanoparticles with an average length of 26.7 nm and an average breadth of 7.8 nm were synthesized. The complex was also used as a single molecule precursor for the deposition of Rh{sub 2}S{sub 3} thin films on a glass substrate at 350 deg. C and 450 deg. C using the Aerosol Assisted Chemical Vapour Deposition (AACVD) technique. The resultant thin films showed temperature dependent morphologies and showed (0 2 2), (4 1 1) and (6 1 1) lattice planes characteristic of to the orthorhombic Rh{sub 2}S{sub 3} phase. X-ray diffraction and scanning electron microscopy techniques were used to characterize the films.

  7. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

    2013-01-01

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

  8. Carbon steel protection in G.S. (Girlder sulfide) plants. Iron sulfide scales formation on surfaces covered by fabrication produced films. Pt. 4

    International Nuclear Information System (INIS)

    Burkart, A.L.

    1986-04-01

    This work describes the assays aimed to passivate the steel carbon of the process pipings. This steel is marked by the ASTM A 333 G6 and is chemically similar to those of isotopic exchange towers which corrode in contact with in-water hydrogen sulfide solutions forming iron sulfide protective layers. The differences between both materials lie in the surface characteristics to be passivated. The steel of towers has an internal side covered by paint which shall be removed prior to passivation. The steel's internal side shall be covered by a film formed during the fabrication process and constituted by calcinated wastes and iron oxides (magnetite, hematite and wustite). This film interferes in the formation process of passivating layers of pyrrhotite and pyrite. The possibility to passivate the pipes in their actual state was evaluated since it would result highly laborious and expensive to eliminate the film. (Author) [es

  9. Porous Zinc Oxide Thin Films: Synthesis Approaches and Applications

    Directory of Open Access Journals (Sweden)

    Marco Laurenti

    2018-02-01

    Full Text Available Zinc oxide (ZnO thin films have been widely investigated due to their multifunctional properties, i.e., catalytic, semiconducting and optical. They have found practical use in a wide number of application fields. However, the presence of a compact micro/nanostructure has often limited the resulting material properties. Moreover, with the advent of low-dimensional ZnO nanostructures featuring unique physical and chemical properties, the interest in studying ZnO thin films diminished more and more. Therefore, the possibility to combine at the same time the advantages of thin-film based synthesis technologies together with a high surface area and a porous structure might represent a powerful solution to prepare ZnO thin films with unprecedented physical and chemical characteristics that may find use in novel application fields. Within this scope, this review offers an overview on the most successful synthesis methods that are able to produce ZnO thin films with both framework and textural porosities. Moreover, we discuss the related applications, mainly focused on photocatalytic degradation of dyes, gas sensor fabrication and photoanodes for dye-sensitized solar cells.

  10. Degradation of zinc oxide thin films in aqueous environment. Pt. II. Coated films

    Energy Technology Data Exchange (ETDEWEB)

    Rosa, L. de; Mitton, D.B.; Monetta, T.; Bellucci, F. [Naples Univ. (Italy). Dept. of Materials and Production Engineering; Springer, J. [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany)

    2001-12-01

    cn Part I of this research, the degradation mechanism of two different bare ZnO thin films was assessed. Degradation of the electrical properties of ZnO as well as changes in morphology were observed for both films. In the current paper, the degradation of zinc oxide thin films coated with protective acrylic paint is addressed during exposure to (i) an aqueous 3.5% NaCl solution at 85 C and (ii) a standard damp heat test at 85% R.H. and 85 C. Electrical and electrochemical techniques were employed to monitor zinc oxide degradation during exposure to the test environments. Electrochemical Impedance Spectroscopy was employed to investigate the delamination phenomena at the ZnO/coating interface and a simple equivalent circuit was developed to quantitatively measure the delamination ratio. The effect of different silane based adhesion promoters (glycidil-oxypropyl-trimethoxy-silane and aminopropyl-trimethoxy-silane) was also investigated. (orig.)

  11. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  12. Zinc sulfide and zinc selenide immersion gratings for astronomical high-resolution spectroscopy: evaluation of internal attenuation of bulk materials in the short near-infrared region

    Science.gov (United States)

    Ikeda, Yuji; Kobayashi, Naoto; Kondo, Sohei; Yasui, Chikako; Kuzmenko, Paul J.; Tokoro, Hitoshi; Terada, Hiroshi

    2009-08-01

    We measure the internal attenuation of bulk crystals of chemical vapor deposition zinc selenide (CVD-ZnS), chemical vapor deposition zinc sulfide (CVD-ZnSe), Si, and GaAs in the short near-infrared (sNIR) region to evaluate the possibility of astronomical immersion gratings with those high refractive index materials. We confirm that multispectral grade CVD-ZnS and CVD-ZnSe are best suited for the immersion gratings, with the smallest internal attenuation of αatt=0.01 to 0.03 cm-1 among the major candidates. The measured attenuation is roughly in proportion to λ-2, suggesting it is dominated by bulk scattering due to the polycrystalline grains rather than by absorption. The total transmittance in the immersion grating is estimated to be at least >80%, even for the spectral resolution of R=300,000. Two potential problems, the scattered light by the bulk material and the degradation of the spectral resolution due to the gradient illumination in the diffracted beam, are investigated and found to be negligible for usual astronomical applications. Since the remaining problem, the difficulty of cutting grooves on CVD-ZnS and CVD-ZnSe, has recently been overcome by the nanoprecision fly-cutting technique, ZnS and ZnSe immersion gratings for astronomy can be technically realized.

  13. On the origin of life in the Zinc world. 2. Validation of the hypothesis on the photosynthesizing zinc sulfide edifices as cradles of life on Earth

    Directory of Open Access Journals (Sweden)

    Mulkidjanian Armen Y

    2009-08-01

    Full Text Available Abstract Background The accompanying article (A.Y. Mulkidjanian, Biology Direct 4:26 puts forward a detailed hypothesis on the role of zinc sulfide (ZnS in the origin of life on Earth. The hypothesis suggests that life emerged within compartmentalized, photosynthesizing ZnS formations of hydrothermal origin (the Zn world, assembled in sub-aerial settings on the surface of the primeval Earth. Results If life started within photosynthesizing ZnS compartments, it should have been able to evolve under the conditions of elevated levels of Zn2+ ions, byproducts of the ZnS-mediated photosynthesis. Therefore, the Zn world hypothesis leads to a set of testable predictions regarding the specific roles of Zn2+ ions in modern organisms, particularly in RNA and protein structures related to the procession of RNA and the "evolutionarily old" cellular functions. We checked these predictions using publicly available data and obtained evidence suggesting that the development of the primeval life forms up to the stage of the Last Universal Common Ancestor proceeded in zinc-rich settings. Testing of the hypothesis has revealed the possible supportive role of manganese sulfide in the primeval photosynthesis. In addition, we demonstrate the explanatory power of the Zn world concept by elucidating several points that so far remained without acceptable rationalization. In particular, this concept implies a new scenario for the separation of Bacteria and Archaea and the origin of Eukarya. Conclusion The ability of the Zn world hypothesis to generate non-trivial veritable predictions and explain previously obscure items gives credence to its key postulate that the development of the first life forms started within zinc-rich formations of hydrothermal origin and was driven by solar UV irradiation. This concept implies that the geochemical conditions conducive to the origin of life may have persisted only as long as the atmospheric CO2 pressure remained above ca. 10 bar

  14. Structural and optical studied of nano structured lead sulfide thin films prepared by the chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Al Din, Nasser Saad, E-mail: nsaadaldin@yahoo.com; Hussain, Nabiha, E-mail: nabihahssin@yahoo.com [Damascus University Faculty of Science, Department of physics, Homs (Syrian Arab Republic); Jandow, Nidhal, E-mail: nidhaljandow@yahoo.com [Al –Mustansiriyah University, College of Education, Department of physics, Baghdad (Iraq)

    2016-07-25

    Lead (II) Sulfide PbS thin films were deposited on glass substrates at 25°C by chemical bath deposition (CBD) method. The structural properties of the films were studied as a function of the concentration of Thiourea (CS (NH{sub 2}){sub 2}) as Source of Sulfide and deposition time. The surface morphology of the films was characterized by X-ray diffraction and SEM. The obtained results showed that the as-deposited films Polycrystalline had cubic crystalline phase that belong to S.G: Fm3m. We found that they have preferred orientation [200]. Also the thickness of thin films decrease with deposition time after certain value and, it observed free sulfide had orthorhombic phase. Optical properties showed that the thin films have high transmission at visible range and low transmission at UV, IR range. The films of PbS have direct band gap (I.68 - 2.32 ev) at 300 K the values of band energy decreases with increases thickness of the Lead (II) Sulfide films.

  15. Indium sulfide thin films as window layer in chemically deposited solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo-Loredo, S. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Peña-Méndez, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Messina-Fernández, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63190 Tepic, Nayarit (Mexico); Alvarez-Gallegos, A. [Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad 1001, C.P. 62209, Cuernavaca Morelos (Mexico); Vázquez-Dimas, A.; Hernández-García, T. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico)

    2014-01-01

    Indium sulfide (In{sub 2}S{sub 3}) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO{sub 3}){sub 3} as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In{sub 2}S{sub 3}. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In{sub 2}S{sub 3} thin films are photosensitive with an electrical conductivity value in the range of 10{sup −3}–10{sup −7} (Ω cm){sup −1}, depending on the film preparation conditions. We have demonstrated that the In{sub 2}S{sub 3} thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO{sub 2}:F/In{sub 2}S{sub 3}/Sb{sub 2}S{sub 3}/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm{sup 2}. - Highlights: • In{sub 2}S{sub 3} thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In{sub 2}S{sub 3} films. • We made chemically deposited solar cells using the In{sub 2}S{sub 3} thin films.

  16. Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Como, N. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Martinez-Landeros, V. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Mejia, I. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Aguirre-Tostado, F.S. [Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Nascimento, C.D.; Azevedo, G. de M; Krug, C. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900 (Brazil); Quevedo-Lopez, M.A., E-mail: mquevedo@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States)

    2014-01-01

    The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10{sup −1} to 10{sup 4} Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10{sup 19} to 10{sup 13} cm{sup −3} and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm{sup 2}/V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10{sup 19} to 10{sup 13} cm{sup −3}. • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied.

  17. Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Hernandez-Como, N.; Martinez-Landeros, V.; Mejia, I.; Aguirre-Tostado, F.S.; Nascimento, C.D.; Azevedo, G. de M; Krug, C.; Quevedo-Lopez, M.A.

    2014-01-01

    The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10 −1 to 10 4 Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10 19 to 10 13 cm −3 and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm 2 /V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10 19 to 10 13 cm −3 . • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied

  18. Kinetic analysis on photocatalytic degradation of gaseous acetaldehyde, ammonia and hydrogen sulfide on nanosized porous TiO2 films

    Directory of Open Access Journals (Sweden)

    Iis Sopyan

    2007-01-01

    Full Text Available The characteristics of the UV illumination-assisted degradation of gaseous acetaldehyde, hydrogen sulfide, and ammonia on highly active nanostructured-anatase and rutile films were investigated. It was found that the anatase film showed a higher photocatalytic activity than the counterpart did, however, the magnitude of difference in the photocatalytic activity of both films decreased in the order ammonia>acetaldehyde>hydrogen sulfide. To elucidate the reasons for the observation, the adsorption characteristics and the kinetics of photocatalytic degradation of the three reactants on both films were analyzed. The adsorption analysis examined using a simple Langmuir isotherm, showed that adsorbability on both films decreased in the order ammonia>acetaldehyde>hydrogen sulfide, which can be explained in terms of the decreasing electron-donor capacity. Acetaldehyde and ammonia adsorbed more strongly and with higher coverage on anatase film (1.2 and 5.6 molecules/nm2, respectively than on rutile (0.6 and 4.7 molecules/nm2, respectively. Conversely, hydrogen sulfide molecules adsorbed more strongly on rutile film (0.7 molecules/nm2 than on anatase (0.4 molecules/nm2. Exposure to UV light illumination brought about the photocatalytic oxidation of the three gases in contact with both TiO2 films, and the decrease in concentration were measured, and their kinetics are analyzed in terms of the Langmuir–Hinshelwood kinetic model. From the kinetic analysis, it was found that the anatase film showed the photocatalytic activities that were factors of ~8 and ~5 higher than the rutile film for the degradation of gaseous ammonia and acetaldehyde, respectively. However, the activity was only a factor of ~1.5 higher for the photodegradation of hydrogen sulfide. These observations are systematically explained by the charge separation efficiency and the adsorption characteristics of each catalyst as well as by the physical and electrochemical properties of each

  19. Investigation of physicochemical and pigment properties of solid solutions of cadmium, manganese, zinc sulfides

    International Nuclear Information System (INIS)

    Grigor'eva, L.I.; Ignat'eva, I.V.; Kalinskaya, T.V.

    1985-01-01

    Mixed sulfides (Cd, Mn)S and (Cd, Mn, Zn)S with manganese sulfide content upto 50 mol% are synthesized. The possibility of preparing solid solutions both on the basis of silfides (Cd, Mn)S and in the ternary system (Cd, Mn, Zn)S with the temperature of polymorphic transformation of a cubic structure into a hexagonal one, being lower (500 deg C) than in the absence of MnS, is shown by the X-ray diffraction method. The colour analysis of the pigment specimens obtained has shown that the quantity of oxidized manganese compounds, producing no effect of the system colour, should not exceed 0.05 mol% on conversion to MnS. Among the mixed specimens (Cd, Mn)S the brightest colour background is obtained for specimens calcinated at 500-550 deg C. The mixed sulfide of the composition 0.77CdSx0.15MnSx0.08ZnS, calcinated at 500 deg C, gives a pigment corresponding to a commercial one by colour

  20. FABRICATION OF ZNS THIN FILM FOR INORGANIC EL BY THE VACCUUM EVAPORATION

    OpenAIRE

    龍見, 雅美; 島谷, 圭市; 小西, 信行; 元木, 健作

    2008-01-01

    "Zinc sulfide is a typical material for inorganic electroluminescent(EL) device. Recently very high luminance and life time e has been reported on an inorganic EL device based on thin film zinc sulfide material. The present study tries to realize high quality zinc sulfide thin film for EL device. The thin film was grown by the vacuum evaporation method. In order to obtain stoichiometric thin film, the vacuum evaporation was carried out in a quasi-closed vessel under a condition of sulfur atmo...

  1. Autometallographic silver enhancement of zinc sulfide crystals created in cryostat sections from human brain biopsies

    DEFF Research Database (Denmark)

    Danscher, G; Juhl, S; Stoltenberg, M

    1997-01-01

    samples containing zinc-enriched (ZEN) cells, are frozen in liquid nitrogen or by CO2 gas immediately after removal. The tissue blocks are cut in a cryostat and the sections placed on glass slides. The slides are transferred to an H2S exposure chamber placed in a -15 C freezer. After 1-24 hr of gas...

  2. Chemical Annealing of Zinc Tetraphenylporphyrin Films: Effects on Film Morphology and Organic Photovoltaic Performance

    KAUST Repository

    Trinh, Cong

    2012-07-10

    We present a chemical annealing process for organic thin films. In this process, a thin film of a molecular material, such as zinc tetraphenylporphyrin (ZnTPP), is exposed to a vapor of nitrogen-based ligand (e.g., pyrazine, pz, and triazine, tz), forming a film composed of the metal-ligand complex. Fast and quantitative formation of the complex leads to marked changes in the morphology and optical properties of the film. X-ray diffraction studies show that the chemical annealing process converts amorphous ZnTPP films to crystalline ZnTPP•ligand films, whose porphryin planes lie nearly parallel to the substrate (average deviation is 8° for the ZnTPP•pz film). Organic solar cells were prepared with ZnTPP donor and C 60 acceptor layers. Devices were prepared with and without chemical annealing of the ZnTPP layer with a pyrazine ligand. The devices with chemically annealed ZnTPP donor layer show an increase in short-circuit current (J SC) and fill factor (FF) relative to analogous unannealed devices, presumably because of enhanced exciton diffusion length and improved charge conductivity. The open circuit voltages (V OC) of the chemically annealed devices are lower than their unannealed counterpart because of enhanced polaron pair recombination at the donor/acceptor heterojunction. A net improvement of 5-20% in efficiency has been achieved, after chemical annealing of ZnTPP films with pyrazine. © 2012 American Chemical Society.

  3. Zinc

    Science.gov (United States)

    ... Consumer Datos en español Health Professional Other Resources Zinc Fact Sheet for Consumers Have a question? Ask ... find out more about zinc? Disclaimer What is zinc and what does it do? Zinc is a ...

  4. Zinc Sulfide Buffer Layer for CIGS Solar Cells Prepared by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    Rui-Wei You

    2016-11-01

    Full Text Available In this study, ZnS thin films were successfully synthesized by chemical bath deposition (CBD with starting materials of NH2-NH2, SC(NH22, and ZnSO4‧7H2O. ZnS thin films were deposited with different time on glass substrates by CBD at 80oC and pH=9. Based on X-ray diffraction (XRD patterns, it is found that the ZnS thin films exhibit cubic polycrystalline phase. It was found that the optimum deposition time is 90 min for preparing ZnS thin film that is suitable as buffer layer for CuIn1-xGaxSe2 solar cells. The thin film deposited for 90 min has high transmittance up to 80% in the spectra range from 350 nm to 800 nm, and the optical band gap is about 3.59 eV.

  5. The peculiarity of the formation of zinc films on a glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Tomaev, V. V., E-mail: tvaza@mail.ru [Saint Petersburg State University, 198504, Russia, Saint-Petersburg, Petrodvorets, Universitetskii pr. 26 (Russian Federation); Saint Petersburg Mining University, Russia, 199106, St. Petersburg, V.O., 21-st line, 2 (Russian Federation); Polishchuk, V. A., E-mail: vpvova2010@yandex.ru [St. Petersburg University of Information Technologies, Mechanics, and Optics, 197101, Russia, St. Petersburg, Kronverksky Pr., 49 (Russian Federation); Borisov, E. N., E-mail: enbor@bk.ru [Saint Petersburg State University, 198504, Russia, Saint-Petersburg, Petrodvorets, Universitetskii pr. 26 (Russian Federation)

    2016-06-17

    Thin Nanocrystalline films of the zinc have been fabricated by thermal spraying on the glass substrate. Morphologies and structure of the films had been investigated by the methods X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). It is found that the surface of the films has a different types of the nanocrystals zinc. Were detected intergrowths of two or more the nanocrystals, hexagonal shape. Using the theory of homogeneous and heterogeneous nucleation of a new phase, had been evaluated the geometrical and thermodynamic parameters nanocrystals zinc.

  6. Mechanical properties of bioplastics cassava starch film with Zinc Oxide nanofiller as reinforcement

    Science.gov (United States)

    Harunsyah; Yunus, M.; Fauzan, Reza

    2017-06-01

    This study focuses on investigating the influence of zinc oxide nanofiller on the mechanical properties of bioplastic cassava starch films. Bioplastic cassava starch film-based zinc oxide reinforced composite biopolymeric films were prepared by casting technique. The content of zinc oxide in the bioplastic films was varied from 0.2%, 0.4%, 0.6%, 0.8% and 1.0% (w/w) by weight of starch. Surface morphologies of the composites bioplastic films were examined by scanning electron microscope (SEM).The result showed that the Tensile strength (TS) was improved significantly with the additional of zinc oxide but the elongation at break (EB %) of the composites was decreased. The maximum tensile strength obtained was 22.30 kgf / mm on the additional of zinc oxide by 0.6% and plastilizer by 25%. Based on data of FTIR, the produced film plastic did not change the group function and it can be concluded that theinteraction in film plastic produced was only a physical interaction. Biodegradable plastic film based on cassava starch-zinc oxide and plasticizer glycerol showed that interesting mechanical properties being transparent, clear, homogeneous, flexible, and easily handled.

  7. Mineralogical characterization of steel industry hazardous waste and refractory sulfide ores for zinc and gold recovery processing

    Energy Technology Data Exchange (ETDEWEB)

    Hagni, A.M.; Hagni, R.D. (Univ. of Missouri, Rolla, MO (United States). Geology Geophysics Dept.)

    1994-04-01

    The steel industry generates dust as a waste product from high temperature electric arc furnaces (EAF), which is a major step in processing scrap metal into steel. The Environmental Protection Agency (EPA) has classified EAF dust as KO61 hazardous waste, due to its lead, cadmium, and chromium content. The dust also contains valuable zinc, averaging 19%. Detailed mineralogical characterization show the zinc is present as crystals of franklinite-magnetite-jacobsite solid solutions in calcium-iron-silicate glass spheres and as zincite mostly as very small individual spheres. Much of the chromium is present in an insoluble form in solid solution in the iron spinels. This microscopic research is a valuable tool in determining treatment processes for the 600,000 tons of dust generated annually in the US. Refractory gold ores, pyrite and arsenopyrite, have been studied to determine additional, cost-effective methods of processing. One technique under investigation involves roasting sulfide mineral particles to hematite to create porosity through which a leach can permeate to recover the gold. Portlandite, Ca(OH)[sub 2], is added to the roast for retention of hazardous sulfur and arsenic. Modern microscopic and spectroscopic techniques, such electron spectroscopy for chemical analysis, cathodoluminescence microscopy, and electron microprobe, have been applied, as well as reflected light and dark field microscopy, and scanning electron microscopy to determine the mineralogy of the sulfur, arsenic, and iron phases, and the extent of porosity, permeability, and oxidation state of the ore particles at various roasting temperatures. It is concluded that mineralogical techniques can be effectively applied to the solution of environmental problems.

  8. Electrical and optical properties of amorphous indium zinc oxide films

    International Nuclear Information System (INIS)

    Ito, N.; Sato, Y.; Song, P.K.; Kaijio, A.; Inoue, K.; Shigesato, Y.

    2006-01-01

    Valence electron control and electron transport mechanisms on the amorphous indium zinc oxide (IZO) films were investigated. The amorphous IZO films were deposited by dc magnetron sputtering using an oxide ceramic IZO target (89.3 wt.% In 2 O 3 and 10.7 wt.% ZnO). N-type impurity dopings, such as Sn, Al or F, could not lead to the increase in carrier density in the IZO. Whereas, H 2 introduction into the IZO deposition process was confirmed to be effective to increase carrier density. By 30% H 2 introduction into the deposition process, carrier density increased from 3.08 x 10 2 to 7.65 x 10 2 cm -3 , which must be originated in generations of oxygen vacancies or interstitial Zn 2+ ions. Decrease in the transmittance in the near infrared region and increase in the optical band gap were observed with the H 2 introduction, which corresponded to the increase in carrier density. The lowest resistivity of 3.39 x 10 -4 Ω cm was obtained by 10% H 2 introduction without substrate heating during the deposition

  9. Plasma processes and film growth of expanding thermal plasma deposited textured zinc oxide

    NARCIS (Netherlands)

    Groenen, R.; Linden, J.L.; Sanden, van de M.C.M.

    2005-01-01

    Plasma processes and film growth of textured zinc oxide deposited from oxygen and diethyl zinc utilizing expanding thermal argon plasma created by a cascaded arc is discussed. In all conditions explored, an excess of argon ions and low temperature electrons is available, which represent the

  10. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    KAUST Repository

    Hanna, Amir; Hussain, Aftab M.; Omran, Hesham; Alshareef, Sarah; Salama, Khaled N.; Hussain, Muhammad Mustafa

    2015-01-01

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (Zn

  11. Influence of silane films in the zinc coating post-treatment

    International Nuclear Information System (INIS)

    Costa, Marlla Vallerius da; Menezes, Tiago Lemos; Malfatti, Celia de Fraga; Muller, Iduvirges Lourdes; Oliveira, Claudia Trindade; Bonino, Jean-Pierre

    2009-01-01

    The sol-gel process based on silanes precursors appeared in recent years as a strong alternative for post-treatment to provide an optimization of the protective efficacy of zinc. Moreover, this process has been used to replace chemical chromating conversion based on hexavalent chromium. The silane films are hybrid compounds that provide characteristics of both polymeric materials, such as flexibility and functional compatibility, and ceramic materials, such as high strength and durability. The present work aimed to evaluate the influence of silane films obtained by dip-coating, on the characteristics of electrodeposited zinc coatings. The xerogel films showed a homogeneous surface and a better performance on the corrosion resistance than zinc coating without post-treatment, what can be confirmed by the electrochemical impedance results. These tests showed that application of the silane film promotes the occurrence of one more time constant compared to pure zinc system, hindering the corrosion process. (author)

  12. Enhanced phosphorescence and electroluminescence in triplet emitters by doping gold into cadmium selenide/zinc sulfide nanoparticles

    International Nuclear Information System (INIS)

    Liu, H.-W.; Laskar, Inamur R.; Huang, C.-P.; Cheng, J.-A.; Cheng, S.-S.; Luo, L.-Y.; Wang, H.-R.; Chen, T.-M.

    2005-01-01

    Gold-cadmium selenide/zinc sulfide (Au-CdSe/ZnS) nanocomposites (NCs) were synthesized and characterized by transmission electron microscopy (TEM), energy dispersive X-ray (EDX) analysis, ultraviolet-visible (UV-visible) absorption and photoluminescence (PL) emission spectroscopy. The PL intensity in the Au-CdSe/ZnS NCs system was found to be much greater than that of CdSe/ZnS nanoparticles (NPs) alone, because of the surface-enhanced Raman scattering of Au NPs. Adding Au-CdSe/ZnS NCs to the cyclometalated iridium(III) complex (Ir-complex) greatly enhanced the PL intensity of a triplet emitter. Three double-layered electroluminescence (EL) devices were fabricated where the emitting zone contains the definite mixture of Ir-complex and the NCs [molar concentration of Ir-complex/NCs = 1:0 (Blank, D-1), 1:1 (D-2) and 1:3 (D-3)] and the device D-2 exhibited optimal EL performances

  13. Active Bilayer PE/PCL Films for Food Packaging Modified with Zinc Oxide and Casein

    OpenAIRE

    Rešček, Ana; Kratofil Krehula, Ljerka; Katančić, Zvonimir; Hrnjak-Murgić, Zlata

    2015-01-01

    This paper studies the properties of active polymer food packaging bilayer polyethylene/polycaprolactone (PE/PCL) films. Such packaging material consists of primary PE layer coated with thin film of PCL coating modified with active component (zinc oxide or zinc oxide/casein complex) with intention to extend the shelf life of food and to maintain the quality and health safety. The influence of additives as active components on barrier, mechanical, thermal and antimicrobial properties of such m...

  14. Structural and optical properties of tin (II) sulfide thin films deposited using organophosphorus precursor (Ph3PS)

    Science.gov (United States)

    Assili, Kawther; Alouani, Khaled; Vilanova, Xavier

    2017-02-01

    Tin sulfide (SnS) thin films have been deposited onto glass substrates using triphenylphosphine sulfide (Ph3PS) as a sulfur precursor in a chemical vapor deposition reactor in a temperature range of 250 °C-400 °C. The influence of the sulphidisation temperature in the crystal structure, surface morphology, chemical composition and optical properties has been investigated. X-ray diffraction, energy dispersive analysis of x-rays, and Raman spectroscopy showed that pure SnS thin films have been successfully obtained at 250 °C. All the deposited films were polycrystalline and showed orthorhombic structure, with a preferential orientation according to the direction . The optical measurements showed that the films deposited exhibited a direct allowed transition and have a relatively high absorption coefficient. The presence of mixed tin sulfide phases granted by the variation of the sulphidisation temperature has affected the optical properties of the deposited films. The refractive index (n) and extinction coefficient (k), has low values compared to conventional semiconductor materials. The grown films can be considered as a good light absorbing material and a promising candidate for application in optoelectronic devices.

  15. Ionized zinc vacancy mediated ferromagnetism in copper doped ZnO thin films

    Directory of Open Access Journals (Sweden)

    Shi-Yi Zhuo

    2012-03-01

    Full Text Available This paper reports the origin of ferromagnetism in Cu-doped ZnO thin films. Room-temperature ferromagnetism is obtained in all the thin films when deposited at different oxygen partial pressure. An obviously enhanced peak corresponding to zinc vacancy is observed in the photoluminescence spectra, while the electrical spin resonance measurement implies the zinc vacancy is negative charged. After excluding the possibility of direct exchange mechanisms (via free carriers, we tentatively propose a quasi-indirect exchange model (via ionized zinc vacancy for Cu-doped ZnO system.

  16. Assessing the antimicrobial activity of zinc oxide thin films using disk diffusion and biofilm reactor

    International Nuclear Information System (INIS)

    Gittard, Shaun D.; Perfect, John R.; Monteiro-Riviere, Nancy A.; Wei Wei; Jin Chunming; Narayan, Roger J.

    2009-01-01

    The electronic and chemical properties of semiconductor materials may be useful in preventing growth of microorganisms. In this article, in vitro methods for assessing microbial growth on semiconductor materials will be presented. The structural and biological properties of silicon wafers coated with zinc oxide thin films were evaluated using atomic force microscopy, X-ray photoelectron spectroscopy, and MTT viability assay. The antimicrobial properties of zinc oxide thin films were established using disk diffusion and CDC Biofilm Reactor studies. Our results suggest that zinc oxide and other semiconductor materials may play a leading role in providing antimicrobial functionality to the next-generation medical devices

  17. Photocatalytic properties of zinc sulfide nanocrystals biofabricated by metal-reducing bacterium Shewanella oneidensis MR-1

    International Nuclear Information System (INIS)

    Xiao, Xiang; Ma, Xiao-Bo; Yuan, Hang; Liu, Peng-Cheng; Lei, Yu-Bin; Xu, Hui; Du, Dao-Lin; Sun, Jian-Fan; Feng, Yu-Jie

    2015-01-01

    Highlights: • S. oneidensis MR-1 biofabricated ZnS nanocrystals using artificial wastewater. • ZnS nanocrystals were 5 nm in diameter and aggregated extracellularly. • ZnS had good catalytic activity in the degradation of RHB under UV irradiation. • Photogenerated holes mainly contributed to the degradation of RhB. - Abstract: Accumulation and utilization of heavy metals from wastewater by biological treatment system has aroused great interest. In the present study, a metal-reducing bacterium Shewanella oneidensis MR-1 was used to explore the biofabrication of ZnS nanocrystals from the artificial wastewater. The biogenic H 2 S produced via the reduction of thiosulfate precipitated the Zn(II) as sulfide extracellularly. Characterization by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and field emission scanning electron microscope (FESEM) confirmed the precipitates as ZnS nanocrystals. The biogenic ZnS nanocrystals appeared spherical in shape with an average diameter of 5 nm and mainly aggregated in the medium and cell surface of S. oneidensis MR-1. UV–vis DRS spectra showed ZnS nanoparticles appeared a strong absorption below 360 nm. Thus, the photocatalytic activity of ZnS was evaluated by the photodegradation of rhodamine B (RhB) under UV irradiation. The biogenic ZnS nanocrystals showed a high level of photodegradation efficiency to RhB coupled with a significant blue-shift of maximum adsorption peak. A detailed analysis indicated the photogenerated holes, rather than hydroxyl radicals, contributed to the photocatalytic decolorization of RhB. This approach of coupling biosynthesis of nanoparticles with heavy metal removal may offer a potential avenue for efficient bioremediation of heavy metal wastewater

  18. Photocatalytic properties of zinc sulfide nanocrystals biofabricated by metal-reducing bacterium Shewanella oneidensis MR-1

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Xiang [School of The Environment and Safety Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Urban Water Resource and Environment, Harbin Institute of Technology, Harbin 150090 (China); Ma, Xiao-Bo [School of The Environment and Safety Engineering, Jiangsu University, Zhenjiang 212013 (China); Yuan, Hang [Key Laboratory of Ion Beam Bioengineering, Institute of Technical Biology & Agriculture Engineering, Chinese Academy of Sciences, Hefei 230031 (China); Liu, Peng-Cheng; Lei, Yu-Bin; Xu, Hui [School of The Environment and Safety Engineering, Jiangsu University, Zhenjiang 212013 (China); Du, Dao-Lin, E-mail: ddl@ujs.edu.cn [School of The Environment and Safety Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Urban Water Resource and Environment, Harbin Institute of Technology, Harbin 150090 (China); Sun, Jian-Fan [School of The Environment and Safety Engineering, Jiangsu University, Zhenjiang 212013 (China); Feng, Yu-Jie, E-mail: yujief@hit.edu.cn [State Key Laboratory of Urban Water Resource and Environment, Harbin Institute of Technology, Harbin 150090 (China)

    2015-05-15

    Highlights: • S. oneidensis MR-1 biofabricated ZnS nanocrystals using artificial wastewater. • ZnS nanocrystals were 5 nm in diameter and aggregated extracellularly. • ZnS had good catalytic activity in the degradation of RHB under UV irradiation. • Photogenerated holes mainly contributed to the degradation of RhB. - Abstract: Accumulation and utilization of heavy metals from wastewater by biological treatment system has aroused great interest. In the present study, a metal-reducing bacterium Shewanella oneidensis MR-1 was used to explore the biofabrication of ZnS nanocrystals from the artificial wastewater. The biogenic H{sub 2}S produced via the reduction of thiosulfate precipitated the Zn(II) as sulfide extracellularly. Characterization by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and field emission scanning electron microscope (FESEM) confirmed the precipitates as ZnS nanocrystals. The biogenic ZnS nanocrystals appeared spherical in shape with an average diameter of 5 nm and mainly aggregated in the medium and cell surface of S. oneidensis MR-1. UV–vis DRS spectra showed ZnS nanoparticles appeared a strong absorption below 360 nm. Thus, the photocatalytic activity of ZnS was evaluated by the photodegradation of rhodamine B (RhB) under UV irradiation. The biogenic ZnS nanocrystals showed a high level of photodegradation efficiency to RhB coupled with a significant blue-shift of maximum adsorption peak. A detailed analysis indicated the photogenerated holes, rather than hydroxyl radicals, contributed to the photocatalytic decolorization of RhB. This approach of coupling biosynthesis of nanoparticles with heavy metal removal may offer a potential avenue for efficient bioremediation of heavy metal wastewater.

  19. Reactive radio frequency sputtering deposition and characterization of zinc nitride and oxynitride thin films

    International Nuclear Information System (INIS)

    Jiang, Nanke; Georgiev, Daniel G.; Wen, Ting; Jayatissa, Ahalapitiya H.

    2012-01-01

    Zinc nitride films were deposited on glass or silicon substrates by reactive magnetron radio frequency sputtering of zinc in either N 2 –Ar or N 2 –Ar–O 2 ambient. The effects of varying the nitrogen contents and the substrate temperature were investigated. X-ray diffraction data showed that the as-deposited films contain the zinc nitride cubic crystalline phase with a preferred orientation, and Raman scattering measurements revealed Zn-N related modes. According to energy-dispersive X-ray spectroscopy analysis, the as-deposited films were nitrogen-rich and contained only a small fraction of oxygen. Hall-effect measurements showed that p-type zinc nitride with carrier concentration of ∼ 10 19 cm −3 , mobility of ∼ 10 1 cm 2 /Vs, resistivity of ∼ 10 −2 Ω ∗ cm, was obtained. The photon energy dependence of optical transmittance suggested that the material has an indirect bandgap.

  20. Surface modification of cadmium sulfide thin film honey comb nanostructures: Effect of in situ tin doping using chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, K.C., E-mail: wilsonphy@gmail.com [Department of Physics, Govt. Polytechnic College Kothamangalam, Chelad P O, Ernakulam, Kerala 686681 (India); Department of Physics, B. S. Abdur Rahman University, Vandaloor, Chennai, Tamilnadu 600048 (India); Basheer Ahamed, M. [Department of Physics, B. S. Abdur Rahman University, Vandaloor, Chennai, Tamilnadu 600048 (India)

    2016-01-15

    Graphical abstract: - Highlights: • Novel honey comb like cadmium sulfide thin film nanostructures prepared using chemical bath deposition on glass substrates. • Honey comb nanostructure found in two layers: an ultra thin film at bottom and well inter connected with walls of < 25 nm thick on top; hence maximum surface area possible for CdS nanostructure. • Shell size of the nanostructures and energy band gaps were controlled also an enhanced persistent conductivity observed on Sn doping. - Abstract: Even though nanostructures possess large surface to volume ratio compared to their thin film counterpart, the complicated procedure that demands for the deposition on a substrate kept them back foot in device fabrication techniques. In this work, a honey comb like cadmium sulfide (CdS) thin films nanostructure are deposited on glass substrates using simple chemical bath deposition technique at 65 °C. Energy band gaps, film thickness and shell size of the honey comb nanostructures are successfully controlled using tin (Sn) doping and number of shells per unit area is found to be maximum for 5% Sn doped (in the reaction mixture) sample. X-ray diffraction and optical absorption analysis showed that cadmium sulfide and cadmium hydroxide coexist in the samples. TEM measurements showed that CdS nanostructures are embedded in cadmium hydroxide just like “plum pudding”. Persistent photoconductivity measurements of the samples are also carried out. The decay constants found to be increased with increases in Sn doping.

  1. Comparative study of zinc oxide and aluminum doped zinc oxide transparent thin films grown by direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Suchea, M.; Christoulakis, S.; Katsarakis, N.; Kitsopoulos, T.; Kiriakidis, G.

    2007-01-01

    Pure and aluminum (Al) doped zinc oxide (ZnO and ZAO) thin films have been grown using direct current (dc) magnetron sputtering from pure metallic Zn and ceramic ZnO targets, as well as from Al-doped metallic ZnAl2at.% and ceramic ZnAl2at.%O targets at room temperature (RT). The effects of target composition on the film's surface topology, crystallinity, and optical transmission have been investigated for various oxygen partial pressures in the sputtering atmosphere. It has been shown that Al-doped ZnO films sputtered from either metallic or ceramic targets exhibit different surface morphology than the undoped ZnO films, while their preferential crystalline growth orientation revealed by X-ray diffraction remains always the (002). More significantly, Al-doping leads to a larger increase of the optical transmission and energy gap (E g ) of the metallic than of the ceramic target prepared films

  2. Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique, Starting from Zinc Acetylacetonate and Indium Chloride

    Directory of Open Access Journals (Sweden)

    Rajesh Biswal

    2014-07-01

    Full Text Available The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In thin films, with electrical resistivity as low as 3.42 × 10−3 Ω·cm and high optical transmittance, in the visible range, of 50%–70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growth rate in the order of 100 nm/min. The effects of both indium concentration and the substrate temperature on the structural, morphological, optical, and electrical characteristics were measured. All the films were polycrystalline, fitting well with hexagonal wurtzite type ZnO. A switching in preferential growth, from (002 to (101 planes for indium doped samples were observed. The surface morphology of the films showed a change from hexagonal slices to triangle shaped grains as the indium concentration increases. Potential applications as transparent conductive electrodes based on the resulting low electrical resistance and high optical transparency of the studied samples are considered.

  3. Synthesis of zinc sulfide nanoparticles and their incorporation into poly(hydroxybutyrate) matrix in the formation of a novel nanocomposite

    Science.gov (United States)

    Riaz, Shahina; Raza, Zulfiqar Ali; Majeed, Muhammad Irfan; Jan, Tariq

    2018-05-01

    In the present study, zinc sulfide (ZnS) nanoparticles (NPs) were successfully synthesized through a modified chemical precipitation protocol and then mediated into poly(hydroxybutyrate) (PHB) matrix to get ZnS/PHB nanocomposite. Mean diameter and zeta potential of ZnS NPs, as determined using dynamic light scattering technique (DLS), were observed to be 53 nm and ‑89 mV, respectively. The structural investigations performed using x-ray diffraction (XRD) technique depicted the phase purity of ZnS NPs exhibiting cubic crystal structure. Fourier transform infrared (FTIR) spectroscopic analysis was conducted to identify the presence or absence of bonding vibrational modes on the surface of synthesized single phase ZnS NPs. The FTIR analysis confirmed the metal to sulphur bond formation by showing the characteristic band at 1123 cm‑1. The UV–vis absorption spectra of ZnS NPs confirmed the synthesis of particles in nanoscale regime showing a λ max of 302 nm. These NPs were then successfully incorporated into PHB matrix to synthesize ZnS/PHB nanocomposite. The synthesis of nanocomposite was confirmed by EDX analysis. The chemical bonding and structural properties of ZnS/PHB nanocomposite were determined by FTIR and XRD analysis, respectively. The FTIR analysis confirmed the synthesis of ZnS/PHB nanocomposite. Moreover, XRD analysis showed that structure of nanocomposite was completely controlled by ZnS NPs as pure PHB exhibited orthorhombic crystal structure while the nanocomposite demonstrated cubic crystal structure of ZnS. Thermal properties of nanocomposite were studied through thermogravimetric analysis revealing that the incorporation of ZnS NPs into PHB matrix lead to enhance heat resistance properties of PHB.

  4. Effect of reaction parameters on photoluminescence and photocatalytic activity of zinc sulfide nanosphere synthesized by hydrothermal route

    Energy Technology Data Exchange (ETDEWEB)

    Chanu, T. Inakhunbi; Samanta, Dhrubajyoti [Centre for Material Science and Nanotechnology, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Sikkim 737136 (India); Tiwari, Archana [Department of Physics, Sikkim University, 737102 Sikkim (India); Chatterjee, Somenath, E-mail: somenath@gmail.com [Centre for Material Science and Nanotechnology, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Sikkim 737136 (India); Electronics & Communication Engineering Department, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Sikkim 737136 (India)

    2017-01-01

    Highlights: • ZnS nanosphere synthesis in hydrothermal method with biomolecule as capping ligand. • Effect of reaction parameters to tune the size of ZnS nanoparticles. • Obtain multiple defect emission, which arises from interstitials/vacancies. • 87% degradation of Rh-B in the presence of ZnS nanoparticles under solar radiation. - Abstract: Zinc Sulfide (ZnS) nanospheres have been synthesized using amino acid, L-Histidine as a capping agent by hydrothermal method. The as prepared ZnS have been characterised using X-ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), High Resolution Transmission Electron Microscopy (HRTEM), Photoluminescence (PL), Fourier Transform Infra-Red spectroscopy (FTIR), UV–vis absorption spectroscopy and X-ray Photo Electron Spectroscopy (XPS). Effect of reaction parameters on particle size has been investigated. The morphology and size of the ZnS can be tuned based on the reaction parameters. ZnS nanosphere with a particle size of 5 nm is obtained when the reaction parameters are kept at 120 °C for 3 h. The PL of ZnS shows multiple defect emissions arising from interstitials/vacancies. Particle size of ZnS nanoparticles plays an important role in determining the photo catalytic activity. A chronological study on synthesis of ZnS nanosphere and its photo catalytic activity under the sunlight are discussed here, which reveals the photo degradation of Rhodamine B (RhB) upto 87% as observed with ZnS nanosphere having a particle size of 5 nm.

  5. Effect of active zinc oxide dispersion on reduced graphite oxide for hydrogen sulfide adsorption at mid-temperature

    Energy Technology Data Exchange (ETDEWEB)

    Song, Hoon Sub [Department of Chemical Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario, N2L3G1 (Canada); Greenhouse Gas Department, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of); Park, Moon Gyu [Department of Chemical Engineering Education, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 305-764 (Korea, Republic of); Croiset, Eric, E-mail: ecroiset@uwaterloo.ca [Department of Chemical Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario, N2L3G1 (Canada); Chen, Zhongwei [Department of Chemical Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario, N2L3G1 (Canada); Nam, Sung Chan; Ryu, Ho-Jung [Greenhouse Gas Department, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of); Yi, Kwang Bok, E-mail: cosy32@cnu.ac.kr [Department of Chemical Engineering Education, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 305-764 (Korea, Republic of)

    2013-09-01

    Composites of Zinc oxide (ZnO) with reduced graphite oxide (rGO) were synthesized and used as adsorbents for hydrogen sulfide (H{sub 2}S) at 300 °C. Various characterization methods (TGA, XRD, FT-IR, TEM and XPS) were performed in order to link their H{sub 2}S adsorption performance to the properties of the adsorbent's surface. Microwave-assisted reduction process of graphite oxide (GO) provided mild reduction environment, allowing oxygen-containing functional groups to remain on the rGO surface. It was confirmed that for the ZnO/rGO synthesize using the microwave-assisted reduction method, the ZnO particle size and the degree of ZnO dispersion remained stable over time at 300 °C, which was not the case for only the ZnO particles themselves. This stable highly dispersed feature allows for sustained high surface area over time. This was confirmed through breakthrough experiments for H{sub 2}S adsorption where it was found that the ZnO/rGO composite showed almost four times higher ZnO utilization efficiency than ZnO itself. The effect of the H{sub 2} and CO{sub 2} on H{sub 2}S adsorption was also investigated. The presence of hydrogen in the H{sub 2}S stream had a positive effect on the removal of H{sub 2}S since it allows a reducing environment for Zn-O and Zn-S bonds, leading to more active sites (Zn{sup 2+}) to sulfur molecules. On the other hand, the presence of carbon dioxide (CO{sub 2}) showed the opposite trend, likely due to the oxidation environment and also due to possible competitive adsorption between H{sub 2}S and CO{sub 2}.

  6. Effect of active zinc oxide dispersion on reduced graphite oxide for hydrogen sulfide adsorption at mid-temperature

    Science.gov (United States)

    Song, Hoon Sub; Park, Moon Gyu; Croiset, Eric; Chen, Zhongwei; Nam, Sung Chan; Ryu, Ho-Jung; Yi, Kwang Bok

    2013-09-01

    Composites of Zinc oxide (ZnO) with reduced graphite oxide (rGO) were synthesized and used as adsorbents for hydrogen sulfide (H2S) at 300 °C. Various characterization methods (TGA, XRD, FT-IR, TEM and XPS) were performed in order to link their H2S adsorption performance to the properties of the adsorbent's surface. Microwave-assisted reduction process of graphite oxide (GO) provided mild reduction environment, allowing oxygen-containing functional groups to remain on the rGO surface. It was confirmed that for the ZnO/rGO synthesize using the microwave-assisted reduction method, the ZnO particle size and the degree of ZnO dispersion remained stable over time at 300 °C, which was not the case for only the ZnO particles themselves. This stable highly dispersed feature allows for sustained high surface area over time. This was confirmed through breakthrough experiments for H2S adsorption where it was found that the ZnO/rGO composite showed almost four times higher ZnO utilization efficiency than ZnO itself. The effect of the H2 and CO2 on H2S adsorption was also investigated. The presence of hydrogen in the H2S stream had a positive effect on the removal of H2S since it allows a reducing environment for Znsbnd O and Znsbnd S bonds, leading to more active sites (Zn2+) to sulfur molecules. On the other hand, the presence of carbon dioxide (CO2) showed the opposite trend, likely due to the oxidation environment and also due to possible competitive adsorption between H2S and CO2.

  7. Effect of active zinc oxide dispersion on reduced graphite oxide for hydrogen sulfide adsorption at mid-temperature

    International Nuclear Information System (INIS)

    Song, Hoon Sub; Park, Moon Gyu; Croiset, Eric; Chen, Zhongwei; Nam, Sung Chan; Ryu, Ho-Jung; Yi, Kwang Bok

    2013-01-01

    Composites of Zinc oxide (ZnO) with reduced graphite oxide (rGO) were synthesized and used as adsorbents for hydrogen sulfide (H 2 S) at 300 °C. Various characterization methods (TGA, XRD, FT-IR, TEM and XPS) were performed in order to link their H 2 S adsorption performance to the properties of the adsorbent's surface. Microwave-assisted reduction process of graphite oxide (GO) provided mild reduction environment, allowing oxygen-containing functional groups to remain on the rGO surface. It was confirmed that for the ZnO/rGO synthesize using the microwave-assisted reduction method, the ZnO particle size and the degree of ZnO dispersion remained stable over time at 300 °C, which was not the case for only the ZnO particles themselves. This stable highly dispersed feature allows for sustained high surface area over time. This was confirmed through breakthrough experiments for H 2 S adsorption where it was found that the ZnO/rGO composite showed almost four times higher ZnO utilization efficiency than ZnO itself. The effect of the H 2 and CO 2 on H 2 S adsorption was also investigated. The presence of hydrogen in the H 2 S stream had a positive effect on the removal of H 2 S since it allows a reducing environment for Zn-O and Zn-S bonds, leading to more active sites (Zn 2+ ) to sulfur molecules. On the other hand, the presence of carbon dioxide (CO 2 ) showed the opposite trend, likely due to the oxidation environment and also due to possible competitive adsorption between H 2 S and CO 2 .

  8. Parameters nanodimensional zinc films deposited by the laser method in vacuum

    International Nuclear Information System (INIS)

    Goncharov, V.K.; Gusakov, G.A.; Puzyrev, M.V.

    2013-01-01

    The investigation of the thickness and structure of a zinc films surface produced by the laser-plasma deposition has been carried out. The dependence of a film thickness and surface structure from laser radiation intensity has been determined. Threshold intensity has been determined when an evaporation of a target material begins. (authors)

  9. Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

    International Nuclear Information System (INIS)

    Jiang, X.; Wong, F.L.; Fung, M.K.; Lee, S.T.

    2003-01-01

    Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium-tin-oxide substrates

  10. Effect of Different Post Deposition Annealing Treatments on Properties of Zinc Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Arti Arora

    2010-06-01

    Full Text Available Two different post deposition annealing atmospheres of oxygen and forming gas have been investigated for the improvement of rf sputtered zinc oxide thin films. The results show that type of atmosphere (oxidant o reduction plays an important role in the changes observed in structural, electrical and optical properties. It has been found that the structural properties of rf sputtered zinc oxide films improve in all the annealing environments. The intensity and grain size increases as the annealing temperature increases. It has been found that films become stress free at lowest temperature in oxygen as compare to forming gas annealing. The zinc oxide films annealed in oxygen shows sufficient resistivity associated to high transmittance (83 % characteristics required for MEMS based acoustic devices.

  11. Preparation of transparent conducting zinc oxide films by rf reactive sputtering

    International Nuclear Information System (INIS)

    Vasanelli, L.; Valentini, A.; Losacco, A.

    1986-01-01

    Transparent conducting zinc oxide films have been prepared by reactive sputtering in a Ar/H/sub 2/ mixture. The optical and electrical properties of the films are presented and discussed. The effects of some post-deposition thermal treatment have been also investigated. ZnO/CdTe heterojunctions have been prepared by sputtering ZnO films on CdTe single crystals. The photovoltaic conversion efficiencies of the obtained solar cells was 6.8%

  12. On the origin of life in the Zinc world: 1. Photosynthesizing, porous edifices built of hydrothermally precipitated zinc sulfide as cradles of life on Earth

    Directory of Open Access Journals (Sweden)

    Mulkidjanian Armen Y

    2009-08-01

    Full Text Available Abstract Background The complexity of the problem of the origin of life has spawned a large number of possible evolutionary scenarios. Their number, however, can be dramatically reduced by the simultaneous consideration of various bioenergetic, physical, and geological constraints. Results This work puts forward an evolutionary scenario that satisfies the known constraints by proposing that life on Earth emerged, powered by UV-rich solar radiation, at photosynthetically active porous edifices made of precipitated zinc sulfide (ZnS similar to those found around modern deep-sea hydrothermal vents. Under the high pressure of the primeval, carbon dioxide-dominated atmosphere ZnS could precipitate at the surface of the first continents, within reach of solar light. It is suggested that the ZnS surfaces (1 used the solar radiation to drive carbon dioxide reduction, yielding the building blocks for the first biopolymers, (2 served as templates for the synthesis of longer biopolymers from simpler building blocks, and (3 prevented the first biopolymers from photo-dissociation, by absorbing from them the excess radiation. In addition, the UV light may have favoured the selective enrichment of photostable, RNA-like polymers. Falsification tests of this hypothesis are described in the accompanying article (A.Y. Mulkidjanian, M.Y. Galperin, Biology Direct 2009, 4:27. Conclusion The suggested "Zn world" scenario identifies the geological conditions under which photosynthesizing ZnS edifices of hydrothermal origin could emerge and persist on primordial Earth, includes a mechanism of the transient storage and utilization of solar light for the production of diverse organic compounds, and identifies the driving forces and selective factors that could have promoted the transition from the first simple, photostable polymers to more complex living organisms. Reviewers This paper was reviewed by Arcady Mushegian, Simon Silver (nominated by Arcady Mushegian, Antoine

  13. Zinc hexacyanoferrate film as an effective protecting layer in two-step and one-step electropolymerization of pyrrole on zinc substrate

    International Nuclear Information System (INIS)

    Pournaghi-Azar, M.H.; Nahalparvari, H.

    2005-01-01

    The two-step and one-step electrosynthesis processes of polypyrrole (PPy) films on the zinc substrate are described. The two-step process includes (i) the zinc surface pretreatment with hexacyanoferrate ion in the aqueous medium in order to form a zinc hexacyanoferrate (ZnHCF) film non-blocking passive layer on the surface and with the view to prevent its reactivity and (ii) electropolymerization of pyrrole on the ZnHCF vertical bar Zn-modified electrode in aqueous pyrrole solution. In this context, both the non-electrolytic and electrolytic procedures were adapted, and the effect of some experimental conditions such as supporting electrolyte, pH and temperature of the solution at the zinc surface pretreatment step as well as pyrrole concentration and electrochemical techniques at the polymerization step was investigated. By optimizing the experimental conditions in both steps, we have obtained a homogeneous and strongly adherent PPy films on the zinc substrate. The one-step process is based on the use of an aqueous medium containing Fe(CN) 6 4- and pyrrole. The ferrocyanide ion passivates the substrate by formation of ZnHCF film during the electropolymerization process of pyrrole and therefore makes it possible to obtain strongly adherent PPy films, with controlled thickness, either by cyclic voltammetry or by electrolysis at constant current or constant potential without any previously treatment of the zinc electrode surface. The polypyrrole films deposited on the zinc electrode were characterized by cyclic voltammetry and scanning electron microscopic (SEM) measurement

  14. Influence of indium doping on the properties of zinc tin oxide films and its application to transparent thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Mu Hee; Ma, Tae Young, E-mail: tyma@gnu.ac.kr

    2014-01-01

    In this study, the effects of indium (In) doping on the properties of zinc tin oxide (ZTO) films are reported. ZTO films were prepared by RF magnetron sputtering followed by In layer deposition, for use as the diffusion source. In order to protect the In layer from peeling, a second ZTO film was deposited on the In film. The annealing at 400 °C for 30 min was carried out to diffuse In atoms into the ZTO films. The structural, optical, and elemental properties of the annealed ZTO/In/ZTO films were investigated by X-ray diffraction, UV/vis spectrophotometry, and X-ray photoluminescence spectroscopy, respectively. The ZTO transparent thin film transistors employing the ZTO/In/ZTO films as the source/drain were prepared, and the effects of the In doped source/drain on the threshold voltage and mobility were characterized and analyzed. - Highlights: • We successfully doped zinc tin oxide (ZTO) films using In as a diffusion source. • Indium (In) was diffused in both directions with the diffusion coefficient of ∼ 4.3 × 10{sup −16} cm{sup 2}/s. • The mobility of ZTO thin film transistor was increased 1.6-times by adopting the In-diffused source/drain.

  15. Enhanced photoluminescence in transparent thin films of polyaniline–zinc oxide nanocomposite prepared from oleic acid modified zinc oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sajimol Augustine, M., E-mail: sajimollazar@gmail.com [Department of Physics, St. Teresa' s College, Kochi-11, Kerala (India); Jeeju, P.P.; Varma, S.J.; Francis Xavier, P.A. [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Kochi-22, Kerala (India); Jayalekshmi, S., E-mail: lakshminathcusat@gmail.com [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Kochi-22, Kerala (India)

    2014-07-01

    Oleic acid capped zinc oxide (ZnO) nanoparticles have been synthesized by a wet chemical route. The chemical oxidative method is employed to synthesize polyaniline (PANI) and PANI/ZnO nanocomposites doped with four different dopants such as orthophosphoric acid (H{sub 3}PO{sub 4}), hydrochloric acid (HCl), naphthalene-2-sulphonic acid and camphor sulphonic acid (CSA). The samples have been structurally characterized by X-ray diffraction (XRD), field emission scanning electron microscopy and Fourier transform infrared (FT-IR) spectroscopic techniques. A comparison of the photoluminescence (PL) emission intensity of PANI and PANI/ZnO nanocomposites is attempted. The enhanced PL intensity in PANI/ZnO nanocomposites is caused by the presence of nanostructured and highly fluorescent ZnO in the composites. It has been observed that, among the composites, the H{sub 3}PO{sub 4} doped PANI/ZnO nanocomposite is found to exhibit the highest PL intensity because of the higher extent of (pi) conjugation and the more orderly arrangement of the benzenoid and quinonoid units. In the present work, transparent thin films of PANI and PANI/ZnO nanocomposite for which PL intensity is found to be maximum, have been prepared after re-doping with CSA by the spin-coating technique. The XRD pattern of the PANI/ZnO film shows exceptionally good crystallanity compared to that of pure PANI, which suggests that the addition of ZnO nanocrystals helps in enhancing the crystallanity of the PANI/ZnO nanocomposite. There is a significant increase in the PL emission intensity of the PANI/ZnO nanocomposite film making it suitable for the fabrication of optoelectronic devices. - Highlights: • Oleic acid capped zinc oxide nanoparticles are synthesized by wet chemical method. • Polyaniline/zinc oxide nanocomposites are prepared by in-situ polymerization. • Polyaniline and polyaniline/zinc oxide thin films are deposited using spin-coating. • Enhanced photoluminescence is observed in polyaniline/zinc

  16. Zinc

    Science.gov (United States)

    ... Some early research suggests that zinc supplementation increases sperm count, testosterone levels, and pregnancy rates in infertile men with low testosterone levels. Other research suggests that taking zinc can improve sperm shape in men with moderate enlargement of a ...

  17. Transparent indium zinc oxide thin films used in photovoltaic cells based on polymer blends

    International Nuclear Information System (INIS)

    Besleaga, Cristina; Ion, L.; Ghenescu, Veta; Socol, G.; Radu, A.; Arghir, Iulia; Florica, Camelia; Antohe, S.

    2012-01-01

    Indium zinc oxide (IZO) thin films were obtained using pulsed laser deposition. The samples were prepared by ablation of targets with In concentrations, In/(In + Zn), of 80 at.%, at low substrate temperatures under reactive atmosphere. IZO films were used as transparent electrodes in polymer-based – poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 1:1 blend – photovoltaic cells. The action spectra measurements revealed that IZO-based photovoltaic structures have performances comparable with those using indium–tin–oxide as transparent electrode. - Highlights: ► Indium zinc oxide films were grown by pulsed laser deposition at room temperature. ► The films had large free carrier density and reasonably high mobility. ► These films fit for transparent electrodes in polymer-based photovoltaic cells.

  18. Temperature, Crystalline Phase and Influence of Substrate Properties in Intense Pulsed Light Sintering of Copper Sulfide Nanoparticle Thin Films.

    Science.gov (United States)

    Dexter, Michael; Gao, Zhongwei; Bansal, Shalu; Chang, Chih-Hung; Malhotra, Rajiv

    2018-02-02

    Intense Pulsed Light sintering (IPL) uses pulsed, visible light to sinter nanoparticles (NPs) into films used in functional devices. While IPL of chalcogenide NPs is demonstrated, there is limited work on prediction of crystalline phase of the film and the impact of optical properties of the substrate. Here we characterize and model the evolution of film temperature and crystalline phase during IPL of chalcogenide copper sulfide NP films on glass. Recrystallization of the film to crystalline covellite and digenite phases occurs at 126 °C and 155 °C respectively within 2-7 seconds. Post-IPL films exhibit p-type behavior, lower resistivity (~10 -3 -10 -4  Ω-cm), similar visible transmission and lower near-infrared transmission as compared to the as-deposited film. A thermal model is experimentally validated, and extended by combining it with a thermodynamic approach for crystal phase prediction and via incorporating the influence of film transmittivity and optical properties of the substrate on heating during IPL. The model is used to show the need to a-priori control IPL parameters to concurrently account for both the thermal and optical properties of the film and substrate in order to obtain a desired crystalline phase during IPL of such thin films on paper and polycarbonate substrates.

  19. Preparation and spectroscopic analysis of zinc oxide nanorod thin films of different thicknesses

    Directory of Open Access Journals (Sweden)

    Mia Nasrul Haque

    2017-10-01

    Full Text Available Zinc oxide thin films with different thicknesses were prepared on microscopic glass slides by sol-gel spin coating method, then hydrothermal process was applied to produce zinc oxide nanorod arrays. The nanorod thin films were characterized by various spectroscopic methods of analysis. From the images of field emission scanning electron microscope (FESEM, it was observed that for the film thickness up to 200 nm the formed nanorods with wurtzite hexagonal structure were uniformly distributed over the entire surface substrate. From X-ray diffraction analysis it was revealed that the thin films had good polycrystalline nature with highly preferred c-axis orientation along (0 0 2 plane. The optical characterization done by UV-Vis spectrometer showed that all the films had high transparency of 83 % to 96 % in the visible region and sharp cut off at ultraviolet region of electromagnetic spectrum. The band gap of the films decreased as their thickness increased. Energy dispersive X-ray spectroscopy (EDS showed the presence of zinc and oxygen elements in the films and Fourier transform infrared spectroscopy (FT-IR revealed the chemical composition of ZnO in the film.

  20. Nitrogen and Sulfur Co-doped Graphene Supported Cobalt Sulfide Nanoparticles as an Efficient Air Cathode for Zinc-air Battery

    International Nuclear Information System (INIS)

    Ganesan, Pandian; Ramakrishnan, Prakash; Prabu, Moni; Shanmugam, Sangaraju

    2015-01-01

    Highlights: • CoS 2 nanoparticles supported on a nitrogen and sulfur co-doped graphene oxide is described. • Improved round trip efficiency was observed for CoS 2 (400)/N,S-GO. • CoS 2 (400)/N,S-GO possess improved durability with low over-potential. • CoS 2 (400)/N,S-GO is a promising air cathode for zinc-air battery. - ABSTRACT: Zinc-air battery is considered as one of the promising energy storage devices due to their low cost, eco-friendly and safe. Here, we present a simple approach to the preparation of cobalt sulfide nanoparticles supported on a nitrogen and sulfur co-doped graphene oxide surface. Cobalt sulfide nanoparticles dispersed on graphene oxide hybrid was successfully prepared by solid state thermolysis approach at 400 °C, using cobalt thiourea and graphene oxide. X-ray diffraction study revealed that hybrid electrode prepared at 400 °C results in pure CoS 2 phase. The hybrid CoS 2 (400)/N,S-GO electrode exhibits low over-potential gap about 0.78 V vs. Zn after 70 cycles with remarkable and robust charge and discharge profile. And also the CoS 2 (400)/N,S-GO showing deep discharge behavior with stability up to 7.5 h.

  1. Experimental Investigation of Zinc Antimonide Thin Film Thermoelectric Element over Wide Range of Operating Conditions

    DEFF Research Database (Denmark)

    Mirhosseini, Mojtaba; Rezania, Alireza; Blichfeld, Anders B.

    2017-01-01

    flows in plane with the thin film. At first, the effect of applying different temperatures at the hot side of the specimen is investigated to reach steady state in an open circuit analysis. Then, the study focuses on performance and stability analysis of the thermoelectric element operating under......Zinc antimonide compounds are among the most efficient thermoelectric (TE) materials with exceptional low thermal conductivity at moderate temperatures up to 350 °C. This study aims to evaluate the performance of a zinc antimonide thin film TE deposited on an insulating substrate, while the heat...

  2. Fabrication of superhydrophobic sol-gel composite films using hydrophobically modified colloidal zinc hydroxide.

    Science.gov (United States)

    Lakshmi, R V; Basu, Bharathibai J

    2009-11-15

    A superhydrophobic sol-gel composite film was fabricated by incorporating hydrophobically modified colloidal zinc hydroxide (CZH) in sol-gel matrix. CZH was prepared by controlled precipitation and modified by treatment with stearic acid. The concentration of stearic acid and stirring time were optimized to obtain modified CZH with very high water contact angle (WCA) of 165 degrees and sliding angle (SA)superhydrophobic surfaces. FTIR spectrum also confirmed the presence of zinc stearate in the composite film. The method is simple and cost-effective and does not involve any expensive chemicals or equipments.

  3. Transparent conductive zinc oxide basics and applications in thin film solar cells

    CERN Document Server

    Klein, Andreas; Rech, Bernd

    2008-01-01

    Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

  4. Preparation and study of the properties of indium phosphide thin films impregnated with cadmium and zinc

    International Nuclear Information System (INIS)

    Moutinho, H.R.

    1984-01-01

    Indium phosphide thin films were deposited by vacuum evaporation of indium and phosphorous, using the three-temperature method. The effects of the introduction of cadmium and zinc, group II impurities, on the properties of these films were studied. The introduction of cadmium was achieved by coevaporation of this element during the film deposition. The introduction of zinc was done by diffusion of this element in intrinsic films. Analyses of these films were carried out by the study of the composition, morphology, structure, optical properties and electrical properties. The introduction of cadmium led to the reduction of grain size and increase in the bandgap and in certain cases, even change in morphology. Phases of CdP2 and β-CdP2 were detected and the resistivity increased by some orders of magnitude. The introduction of zinc did not change the morphology, crystalline structure and bandgap. However, a new energy level corresponding to the zinc acceptor level was found and the resistivity increased by some orders of magnitude. (Author) [pt

  5. Rapid deposition process for zinc oxide film applications in pyroelectric devices

    International Nuclear Information System (INIS)

    Hsiao, Chun-Ching; Yu, Shih-Yuan

    2012-01-01

    Aerosol deposition (AD) is a rapid process for the deposition of films. Zinc oxide is a low toxicity and environmentally friendly material, and it possesses properties such as semiconductivity, pyroelectricity and piezoelectricity without the poling process. Therefore, AD is used to accelerate the manufacturing process for applications of ZnO films in pyroelectric devices. Increasing the temperature variation rate in pyroelectric films is a useful method for enhancing the responsivity of pyroelectric devices. In the present study, a porous ZnO film possessing the properties of large heat absorption and high temperature variation rate is successfully produced by the AD rapid process and laser annealing for application in pyroelectric devices. (paper)

  6. Participation of the Third Order Optical Nonlinearities in Nanostructured Silver Doped Zinc Oxide Thin Solid Films

    Directory of Open Access Journals (Sweden)

    C. Torres-Torres

    2012-01-01

    Full Text Available We report the transmittance modulation of optical signals in a nanocomposite integrated by two different silver doped zinc oxide thin solid films. An ultrasonic spray pyrolysis approach was employed for the preparation of the samples. Measurements of the third-order nonlinear optical response at a nonresonant 532 nm wavelength of excitation were performed using a vectorial two-wave mixing. It seems that the separated contribution of the optical nonlinearity associated with each film noticeable differs in the resulting nonlinear effects with respect to the additive response exhibited by the bilayer system. An enhancement of the optical Kerr nonlinearity is predicted for prime number arrays of the studied nanoclusters in a two-wave interaction. We consider that the nanostructured morphology of the thin solid films originates a strong modification of the third-order optical phenomena exhibited by multilayer films based on zinc oxide.

  7. Photochemical oxygen reduction by zinc phthalocyanine and silver/gold nanoparticle incorporated silica thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pal, Manas; Ganesan, Vellaichamy, E-mail: velganesh@yahoo.com; Azad, Uday Pratap

    2012-12-15

    Silver or gold nanoparticles are synthesized using a borohydride reduction method and are anchored simultaneously into/onto the mercaptopropyl functionalized silica. Later, zinc phthalocyanine is adsorbed onto the above materials. Thin films of these materials are prepared by coating an aqueous colloidal suspension of the respective material onto glass plates. Visible light irradiation of these films in oxygen saturated, stirred aqueous solutions effectively reduces oxygen to hydrogen peroxide. The photocatalytic reduction of oxygen is explained on the basis of the semiconducting properties of the silica films. The back electron transfer reaction is largely prevented by means of a sacrificial electron donor, triethanolamine. - Highlights: Black-Right-Pointing-Pointer Zinc phthalocyanine adsorbed silica materials were prepared. Black-Right-Pointing-Pointer Thin films of these materials photocatalytically reduce oxygen. Black-Right-Pointing-Pointer The photocatalysis is explained based on semiconductor properties of the materials. Black-Right-Pointing-Pointer Metal nanoparticles increase the photocatalytic efficiency of the materials.

  8. Characteristics of indium zinc oxide films deposited using the facing targets sputtering method for OLEDs applications

    International Nuclear Information System (INIS)

    Rim, Y.S.; Kim, H.J.; Kim, K.H.

    2010-01-01

    The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates using the facing targets sputtering (FTS) system. The electrical, optical and structural properties of the IZO thin films deposited as functions of sputtering parameters on the glass and PES substrates. An optimal IZO deposition condition is fabricated for organic light-emitting device (OLED) based on glass and PES. The amorphous IZO anode-based OLEDs show superior current density and luminance characteristics.

  9. Studying the state of the surface and internal mass of powder-like zinc and cadmium sulfides

    International Nuclear Information System (INIS)

    Bundel', A.A.; Khozhainov, Yu.M.

    1979-01-01

    The investigation on the chemical and the phase composition of the surface and the bulk of powder zinc and cadmium sulphides as a function of the conditions of ignition and physico-chemical processing carried out using electron diffraction, X-ray phase and chemical analyses. The electron diffraction analysis has shown that ignition gives rise to zinc oxide on the surface of zinc sulphide particles and in the case of cadmium sulphide, to metallic cadmium. To obtain a pure zinc sulphide, free from its oxide both on the surface and in bulk, use should be made of a deoxidized preparation and all contact with oxidizing medium in subsequent ignition should be eliminated

  10. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    International Nuclear Information System (INIS)

    Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-01

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g m change, threshold voltage V T change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature

  11. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Ching-Ting, E-mail: ctlee@ee.ncku.edu.tw; Lin, Yung-Hao; Lin, Jhong-Ham [Institute of Microelectronics, Department of Electrical Engineering, Research Center for Energy Technology and Strategy (RCETS), National Cheng Kung University, Tainan, Taiwan (China)

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  12. Deposition of zinc oxide thin films by reactive pulsed laser ablation

    Czech Academy of Sciences Publication Activity Database

    Bílková, Petra; Zemek, Josef; Mitu, B.; Marotta, V.; Orlando, S.

    2006-01-01

    Roč. 252, - (2006), s. 4604-4609 ISSN 0169-4332 Grant - others:NATO-CNR Outreach Fellowships Programm 2001(XE) 219.34 Institutional research plan: CEZ:AV0Z10100521 Keywords : reactive pulsed laser deposition * zinc oxide * thin films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.436, year: 2006

  13. Effect of Thermal Cycling on Zinc Antimonide Thin Film Thermoelectric Characteristics

    DEFF Research Database (Denmark)

    Mirhosseini, M.; Rezania, A.; Rosendahl, L.

    2017-01-01

    In this study, performance and stability of zinc antimonide thin film thermoelectric sample is analyzed under transient thermal conditions. The thermoelectric materials are deposited on glass based substrate where the heat flow is parallel with the thermoelectric element length. The specimen...

  14. Improved zinc oxide film for gas sensor applications

    Indian Academy of Sciences (India)

    Zinc oxide (ZnO) is a versatile material for different commercial applications such as transparent electrodes, piezoelectric devices, varistors, SAW devices etc because of its high piezoelectric coupling, greater stability of its hexagonal phase and its pyroelectric property. In fact, ZnO is a potential material for gas sensor ...

  15. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.

    2013-02-06

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

  16. Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Hyeonju Lee

    2016-10-01

    Full Text Available We report on the morphological influence of solution-processed zinc oxide (ZnO semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs. Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites.

  17. Tiny optical fiber temperature sensor based on temperature-dependent refractive index of zinc telluride film

    Science.gov (United States)

    Bian, Qiang; Song, Zhangqi; Song, Dongyu; Zhang, Xueliang; Li, Bingsheng; Yu, Yang; Chen, Yuzhong

    2018-03-01

    The temperature-dependent refractive index of zinc telluride film can be used to develop a tiny, low cost and film-coated optical fiber temperature sensor. Pulse reference-based compensation technique is used to largely reduce the background noise which makes it possible to detect the minor reflectivity change of the film in different temperatures. The temperature sensitivity is 0.0034dB/° and the background noise is measured to be 0.0005dB, so the resolution can achieve 0.2°.

  18. Nanostructuring on zinc phthalocyanine thin films for single-junction organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chaudhary, Dhirendra K.; Kumar, Lokendra, E-mail: lokendrakr@allduniv.ac.in [Department of Physics, University of Allahabad, Allahabad-211 002 (India)

    2016-05-23

    Vertically aligned and random oriented crystalline molecular nanorods of organic semiconducting Zinc Phthalocyanine (ZnPc) have been grown on ITO coated glass substrate using solvent volatilization method. Interesting changes in surface morphology were observed under different solvent treatment. Vertically aligned nanorods of ZnPc thin film were observed in the films treated with acetone, where as the random oriented nanorods were observed in the films treated with chloroform. The X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) have been used for characterization of nanostructures. The optical properties of the nanorods have been investigated by UV-Vis. absorption spectroscopy.

  19. Indium doped zinc oxide thin films obtained by electrodeposition

    International Nuclear Information System (INIS)

    Machado, G.; Guerra, D.N.; Leinen, D.; Ramos-Barrado, J.R.; Marotti, R.E.; Dalchiele, E.A.

    2005-01-01

    Indium doped ZnO thin films were obtained by co-electrodeposition (precursor and dopant) from aqueous solution. XRD analysis showed typical patterns of the hexagonal ZnO structure for both doped and undoped films. No diffraction peaks of any other structure such as In 2 O 3 or In(OH) 3 were found. The incorporation of In into the ZnO film was verified by both EDS and XPS measurements. The bandgap energy of the films varied from 3.27 eV to 3.42 eV, increasing with the In concentration in the solution. This dependence was stronger for the less cathodic potentials. The incorporation of In into the film occurs as both, an In donor state in the ZnO grains and as an amorphous In 2 O 3 at the grain boundaries

  20. High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

    Directory of Open Access Journals (Sweden)

    Imas Noviyana

    2017-06-01

    Full Text Available Top-contact bottom-gate thin film transistors (TFTs with zinc-rich indium zinc tin oxide (IZTO active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C.

  1. Influence of sputtering gas pressure on properties of transparent conducting Si-doped zinc oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Qin, Hua; Liu, Hunfa; Lei, Chengxin [Shandong Univ. of Technology, Zibo (China). Dept. of Sciences

    2013-10-15

    Si-doped zinc oxide (SZO, Si 3%) thin films were deposited on glass substrates by means of direct current magnetron sputtering under different pressures. The influence of sputtering pressure on structure, morphology, optical and electrical properties of SZO thin films was investigated. The results reveal that the sputtering pressures have a significant impact on the growth rate, crystal quality and electrical properties of the films, but have little impact on the optical properties of the films. SZO thin film samples grown on glasses are polycrystalline with a hexagonal wurtzite structure and have a preferred orientation along the c-axis perpendicular to the substrate. When the sputtering pressure increases from 2 to 8 Pa, the film surface becomes compact and smooth, the degree of crystallization of the films increases, and the resistivity of films decreases. However, when the sputtering pressure continues to increase from 8 to 10 Pa, the degree of crystallization of the films decreases, the grain size decreases, and the resistivity of the films increases. SZO(3%) thin film deposited at a sputtering pressure of 8 Pa shows the largest carrier concentration, the largest mobility, the lowest resistivity of 3.0 x 10{sup -4} {Omega} cm and a high overall transmission of 93.3% in the visible range. (orig.)

  2. Zinc hexacyanoferrate film as an effective protecting layer in two-step and one-step electropolymerization of pyrrole on zinc substrate

    Energy Technology Data Exchange (ETDEWEB)

    Pournaghi-Azar, M.H. [Electroanalytical Chemistry Laboratory, Faculty of Chemistry, University of Tabriz, Tabriz (Iran, Islamic Republic of)]. E-mail: pournaghiazar@tabrizu.ac.ir; Nahalparvari, H. [Electroanalytical Chemistry Laboratory, Faculty of Chemistry, University of Tabriz, Tabriz (Iran, Islamic Republic of)

    2005-03-15

    The two-step and one-step electrosynthesis processes of polypyrrole (PPy) films on the zinc substrate are described. The two-step process includes (i) the zinc surface pretreatment with hexacyanoferrate ion in the aqueous medium in order to form a zinc hexacyanoferrate (ZnHCF) film non-blocking passive layer on the surface and with the view to prevent its reactivity and (ii) electropolymerization of pyrrole on the ZnHCF vertical bar Zn-modified electrode in aqueous pyrrole solution. In this context, both the non-electrolytic and electrolytic procedures were adapted, and the effect of some experimental conditions such as supporting electrolyte, pH and temperature of the solution at the zinc surface pretreatment step as well as pyrrole concentration and electrochemical techniques at the polymerization step was investigated. By optimizing the experimental conditions in both steps, we have obtained a homogeneous and strongly adherent PPy films on the zinc substrate. The one-step process is based on the use of an aqueous medium containing Fe(CN){sub 6}{sup 4-} and pyrrole. The ferrocyanide ion passivates the substrate by formation of ZnHCF film during the electropolymerization process of pyrrole and therefore makes it possible to obtain strongly adherent PPy films, with controlled thickness, either by cyclic voltammetry or by electrolysis at constant current or constant potential without any previously treatment of the zinc electrode surface. The polypyrrole films deposited on the zinc electrode were characterized by cyclic voltammetry and scanning electron microscopic (SEM) measurement.

  3. Zinc oxide films impurified with Ti and prepared by the Sol-gel method

    International Nuclear Information System (INIS)

    Tirado G, S.; Cazares R, J.M.; Maldonado, A.

    2006-01-01

    Titanium-doped zinc oxide thin films have been prepared on silicon substrate using the Sol-Gel technique. The structural, morphology, electrical and optical properties of such thin films were studied as a function of titanium concentration (0.5, 1 and 1.5 %) and the thin films thickness. Zinc acetate dihydrate and titanium (VI)-oxy acetylacetonate were used as precursor materials, using 2-methoxyethanol and monoethanolamine as via. The X-ray diffraction spectra show polycrystalline films in all the cases. It can see for all the thin films a preferential growth along the (002) planes where the titanium concentration and also the thin films thickness play an important rule. No structural changes are observed at all. The surface morphology studied shows as the grain size decreases when thin thickness is increases. For titanium concentration of 0.5, 1 and 1.5 % values the grains size increase also. The thin films thickness for titanium concentration of 1.5 % was 500 nm (4v), 400 nm (3v), 180 nm (2v) and 130 nm (1v), values obtained from cross-section micrographs. Highly resistive samples are obtained for substrate soda-lime even showing high transmittance. Better physical properties are required for gas sensors or semitransparent electrodes and other possible applications. (Author)

  4. Properties of Nitrogen-Doped Zinc Telluride Films for Back Contact to Cadmium Telluride Photovoltaics

    Science.gov (United States)

    Shimpi, Tushar M.; Drayton, Jennifer; Swanson, Drew E.; Sampath, Walajabad S.

    2017-08-01

    Zinc telluride (ZnTe) films have been deposited onto uncoated glass superstrates by reactive radiofrequency (RF) sputtering with different amounts of nitrogen introduced into the process gas, and the structural and electronic transport properties of the resulting nitrogen-doped ZnTe (ZnTe:N) films characterized. Based on transmission and x-ray diffraction measurements, it was observed that the crystalline quality of the ZnTe:N films decreased with increasing nitrogen in the deposition process. The bulk carrier concentration of the ZnTe:N films determined from Hall-effect measurements showed a slight decrease at 4% nitrogen flow rate. The effect of ZnTe:N films as back contact to cadmium telluride (CdTe) solar cells was also investigated. ZnTe:N films were deposited before or after CdCl2 passivation on CdTe/CdS samples. Small-area devices were characterized for their electronic properties. Glancing-angle x-ray diffraction measurements and energy-dispersive spectroscopy analysis confirmed substantial loss of zinc from the samples where CdCl2 passivation was carried out after ZnTe:N film deposition.

  5. Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Marsal, A.; Carreras, P.; Puigdollers, J.; Voz, C.; Galindo, S.; Alcubilla, R.; Bertomeu, J.; Antony, A.

    2014-01-01

    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. - Highlights: • Zinc promotes the creation of oxygen vacancies in zinc indium tin oxide transistors. • Post deposition annealing in air reduces the density of oxygen. • Density of states reveals a clear peak located at 0.3 eV from the conduction band

  6. UV protective zinc oxide coating for biaxially oriented polypropylene packaging film by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lahtinen, Kimmo, E-mail: kimmo.lahtinen@lut.fi [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland); Kääriäinen, Tommi, E-mail: tommi.kaariainen@colorado.edu [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland); Johansson, Petri, E-mail: petri.johansson@tut.fi [Paper Converting and Packaging Technology, Tampere University of Technology, P.O.Box 589, FI-33101 Tampere (Finland); Kotkamo, Sami, E-mail: sami.kotkamo@tut.fi [Paper Converting and Packaging Technology, Tampere University of Technology, P.O.Box 589, FI-33101 Tampere (Finland); Maydannik, Philipp, E-mail: philipp.maydannik@lut.fi [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland); Seppänen, Tarja, E-mail: tarja.seppanen@lut.fi [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland); Kuusipalo, Jurkka, E-mail: jurkka.kuusipalo@tut.fi [Paper Converting and Packaging Technology, Tampere University of Technology, P.O.Box 589, FI-33101 Tampere (Finland); Cameron, David C., E-mail: david.cameron@miktech.fi [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland)

    2014-11-03

    Biaxially oriented polypropylene (BOPP) packaging film was coated with zinc oxide (ZnO) coatings by atomic layer deposition (ALD) in order to protect the film from UV degradation. The coatings were made at a process temperature of 100 °C using diethylzinc and water as zinc and oxygen precursors, respectively. The UV protective properties of the coatings were tested by using UV–VIS and infrared spectrometry, differential scanning calorimetry (DSC) and a mechanical strength tester, which characterised the tensile and elastic properties of the film. The results obtained with 36 and 67 nm ZnO coatings showed that the ZnO UV protective layer is able to provide a significant decrease in photodegradation of the BOPP film under UV exposure. While the uncoated BOPP film suffered a complete degradation after a 4-week UV exposure, the 67 nm ZnO coated BOPP film was able to preserve half of its original tensile strength and 1/3 of its elongation at break after a 6-week exposure period. The infrared analysis and DSC measurements further proved the UV protection of the ZnO coatings. The results show that a nanometre scale ZnO coating deposited by ALD is a promising option when a transparent UV protection layer is sought for polymer substrates. - Highlights: • Atomic layer deposited zinc oxide coatings were used as UV protection layers. • Biaxially oriented polypropylene (BOPP) film was well protected against UV light. • Formation of UV degradation products in BOPP was significantly reduced. • Mechanical properties of the UV exposed BOPP film were significantly improved.

  7. A new portable sulfide monitor with a zinc-oxide semiconductor sensor for daily use and field study.

    Science.gov (United States)

    Tanda, Naoko; Washio, Jumpei; Ikawa, Kyoko; Suzuki, Kengo; Koseki, Takeyoshi; Iwakura, Masaki

    2007-07-01

    For measuring oral malodor in daily clinical practice and in field study, we developed and evaluated a highly sensitive portable monitor system. We examined sensitivity and specificity of the sensor for volatile sulfur compounds (VSC) and obstructive gases, such as ethanol, acetone, and acetaldehyde. Each mouth air provided by 46 people was measured by this monitor, gas chromatography (GC), and olfactory panel and compared with each other. Based on the result, we used the monitor for mass health examination of a rural town with standardized measuring. The sensor detected hydrogen sulfide, methyl mercaptan, and dimethyl sulfide with 10-1000 times higher sensitivity than the other gases. The monitor's specificity was significantly improved by a VSC-selective filter. There were significant correlations between VSC concentration by the sulfide monitor and by GC, and by organoleptic score. Thirty-six percent of 969 examinees had oral malodor in a rural town. Seventy-eight percent of 969 examinees were motivated to take care of their oral condition by oral malodor measuring with the monitor. The portable sulfide monitor was useful to promote oral health care not only in clinics, but also in field study. The simple and quick operation system and the standardized measuring make it one of parameters of oral condition.

  8. Charge transport in dye-sensibilized porous zinc oxide films; Ladungstransport in farbstoffsensibilisierten poroesen Zinkoxidfilmen

    Energy Technology Data Exchange (ETDEWEB)

    Reemts, J.

    2006-05-18

    During the last decades, zinc oxide has attracted a lot of attention as an important material in various electrical, chemical, and optical applications. In the present work results are discussed gained from investigations of highly porous electrochemically deposited zinc oxide, which is a promising electrode material both in the area of solar energy conversion and sensor technology. The films were prepared by adding detergents during the electrodeposition process. The detergents have a structure-directing influence during the film deposition and, therefore, on the morphology of the films. The obtained electrodes can easily be sensitized for light or different chemicals by a simple adsorption of different molecules. In the present work I discuss the fundamental charge transport properties of electrochemically deposited zinc oxide films. Temperature-dependent measurements of the current-voltage characteristics are carried out and the spectral response of the photoconductivity is investigated. In order to understand the charge transport properties of this highly porous material, it is necessary to get a deeper insight in the electrode morphology. Therefore, different optical and scanning probe microscopy methods are used to characterize the inner structure of the electrodes. The electrical conductivity of the zinc oxide films can be seen as a thermally activated process, which can be explained by electronic transitions from the valence band of the zinc oxide to two shallow impurity levels. The current-voltage characteristic unveils a nonlinear behavior which can be explained by a space-charge-limited current model with traps distributed in energy. Upon excitation with different wavelengths, the conductivity of the zinc oxide increases already under sub-band gap illumination due to widely distributed trap states within the band gap. The transients of the photoconductivity follow a stretched exponential law with time scales in the range of several hours, either if the

  9. Characterization of Langmuir and Langmuir–Blodgett films of an octasubstituted zinc phthalocyanine

    International Nuclear Information System (INIS)

    Torrent-Burgués, J.; Cea, P.; Giner, I.; Guaus, E.

    2014-01-01

    In this work we report the fabrication of Langmuir and Langmuir–Blodgett (LB) films of a substituted ZnPc (octakis(oxyoctyl)phthalocyanine of zinc), and their characterization by means of several techniques. These characterization techniques include surface pressure (π-A) and surface potential (ΔV-A) isotherms as well as UV–vis Reflection spectroscopy and Brewster Angle Microscopy (BAM) for the films at the air–water interface together with UV–vis absorption and IR spectroscopies and Atomic Force Microscopy (AFM) for the LB films. The π-A and ΔV-A isotherms and BAM images indicate a phase transition at a surface pressure of ca. 9 mN/m and a multilayer formation at surface pressures around 19–20 mN/m; at a surface pressure around 27 mN/m a disordered collapse of the film occurs. In addition, AFM images of LB films at π = 10 mN/m and π = 20 mN/m show a monomolecular and a multilayered film, respectively. The comparison of the UV–vis spectrum of ZnPc in solution, the reflection spectra of the Langmuir films and UV–vis spectra of LB films reveals a significant reduction in the Q band intensity for the films, indicative of an organization of ZnPc in the Langmuir and LB films versus the random distribution in solution. The UV–vis Reflection spectra are also consistent with multilayer formation at surface pressures around 19–20 mN/m. The relative intensities of the IR spectrum bands change from the KBr pellet to the LB film which is also attributable to orientation effects in the film. Cyclic voltammetric experiments of LB films incorporating the ZnPc derivative show peaks that can be correlated with redox processes occurring in the phthalocyanine ring. A small but significant influence of the surface pressure and the number of deposited layers in the electrochemical behaviour is observed. The electrochemical response of cast films exhibits some differences with respect to that of LB films which have been attributed to their different molecular

  10. Characterization of Langmuir and Langmuir–Blodgett films of an octasubstituted zinc phthalocyanine

    Energy Technology Data Exchange (ETDEWEB)

    Torrent-Burgués, J. [Department of Chemical Engineering, Universitat Politècnica de Catalunya (UPC), C/Colom 1, 08222 Terrassa, Barcelona (Spain); Institut de Bioenginyeria de Catalunya (IBEC), 08028 Barcelona (Spain); Cea, P. [Departamento de Química Orgánica y Química Física, Facultad de Ciencias, Universidad de Zaragoza, 50009 Zaragoza (Spain); Instituto de Nanociencia de Aragón (INA) y Laboratorio de Microscopias Avanzadas (LMA), Edificio i+d, Campus Rio Ebro, Universidad de Zaragoza, C/Mariano Esquillor, s/n, 50017 Zaragoza (Spain); Giner, I. [Departamento de Química Orgánica y Química Física, Facultad de Ciencias, Universidad de Zaragoza, 50009 Zaragoza (Spain); Guaus, E. [Department of Chemical Engineering, Universitat Politècnica de Catalunya (UPC), C/Colom 1, 08222 Terrassa, Barcelona (Spain)

    2014-04-01

    In this work we report the fabrication of Langmuir and Langmuir–Blodgett (LB) films of a substituted ZnPc (octakis(oxyoctyl)phthalocyanine of zinc), and their characterization by means of several techniques. These characterization techniques include surface pressure (π-A) and surface potential (ΔV-A) isotherms as well as UV–vis Reflection spectroscopy and Brewster Angle Microscopy (BAM) for the films at the air–water interface together with UV–vis absorption and IR spectroscopies and Atomic Force Microscopy (AFM) for the LB films. The π-A and ΔV-A isotherms and BAM images indicate a phase transition at a surface pressure of ca. 9 mN/m and a multilayer formation at surface pressures around 19–20 mN/m; at a surface pressure around 27 mN/m a disordered collapse of the film occurs. In addition, AFM images of LB films at π = 10 mN/m and π = 20 mN/m show a monomolecular and a multilayered film, respectively. The comparison of the UV–vis spectrum of ZnPc in solution, the reflection spectra of the Langmuir films and UV–vis spectra of LB films reveals a significant reduction in the Q band intensity for the films, indicative of an organization of ZnPc in the Langmuir and LB films versus the random distribution in solution. The UV–vis Reflection spectra are also consistent with multilayer formation at surface pressures around 19–20 mN/m. The relative intensities of the IR spectrum bands change from the KBr pellet to the LB film which is also attributable to orientation effects in the film. Cyclic voltammetric experiments of LB films incorporating the ZnPc derivative show peaks that can be correlated with redox processes occurring in the phthalocyanine ring. A small but significant influence of the surface pressure and the number of deposited layers in the electrochemical behaviour is observed. The electrochemical response of cast films exhibits some differences with respect to that of LB films which have been attributed to their different molecular

  11. Indium-Doped Zinc Oxide Thin Films as Effective Anodes of Organic Photovoltaic Devices

    Directory of Open Access Journals (Sweden)

    Ziyang Hu

    2011-01-01

    Full Text Available Indium-doped zinc oxide (IZO thin films were prepared by low-cost ultrasonic spray pyrolysis (USP. Both a low resistivity (3.13×10−3 Ω cm and an average direct transmittance (400∼1500 nm about 80% of the IZO films were achieved. The IZO films were investigated as anodes in bulk-heterojunction organic photovoltaic (OPV devices based on poly(3-hexylthiophene and [6,6]-phenyl C61-butyric acid methyl ester. The device fabricated on IZO film-coated glass substrate showed an open circuit voltage of 0.56 V, a short circuit current of 8.49 mA cm-2, a fill factor of 0.40, and a power conversion efficiency of 1.91%, demonstrating that the IZO films prepared by USP technique are promising low In content and transparent electrode candidates of low-cost OPV devices.

  12. Thickness dependent growth of low temperature atomic layer deposited zinc oxide films

    International Nuclear Information System (INIS)

    Montiel-González, Z.; Castelo-González, O.A.; Aguilar-Gama, M.T.; Ramírez-Morales, E.; Hu, H.

    2017-01-01

    Highlights: • Polycrystalline columnar ZnO thin films deposited by ALD at low temperatures. • Higher deposition temperature leads to a greater surface roughness in the ALD ZnO films. • Higher temperature originates larger refractive index values of the ALD ZnO films. • ZnO thin films were denser as the numbers of ALD deposition cycles were larger. • XPS analysis revels mayor extent of the DEZ reaction during the ALD process. - Abstract: Zinc oxide films are promising to improve the performance of electronic devices, including those based on organic materials. However, the dependence of the ZnO properties on the preparation conditions represents a challenge to obtain homogeneous thin films that satisfy specific applications. Here, we prepared ZnO films of a wide range of thicknesses by atomic layer deposition (ALD) at relatively low temperatures, 150 and 175 °C. From the results of X-ray photoelectron spectroscopy, X-ray diffraction and Spectroscopic Ellipsometry it is concluded that the polycrystalline structure of the wurtzite is the main phase of the ALD samples, with OH groups on their surface. Ellipsometry revealed that the temperature and the deposition cycles have a strong effect on the films roughness. Scanning electron micrographs evidenced such effect, through the large pyramids developed at the surface of the films. It is concluded that crystalline ZnO thin films within a broad range of thickness and roughness can be obtained for optic or optoelectronic applications.

  13. Deposition of nanostructured photocatalytic zinc ferrite films using solution precursor plasma spraying

    International Nuclear Information System (INIS)

    Dom, Rekha; Sivakumar, G.; Hebalkar, Neha Y.; Joshi, Shrikant V.; Borse, Pramod H.

    2012-01-01

    Highlights: ► Highly economic solution precursor route capable of producing films/coating even for mass scale production. ► Pure spinel phase ZnFe 2 O 4 porous, immobilized films deposited in single step. ► Parameter optimization yields access to nanostructuring in SPPS method. ► The ecofriendly immobilized ferrite films were active under solar radiation. ► Such magnetic system display advantage w.r.t. recyclability after photocatalyst extraction. -- Abstract: Deposition of pure spinel phase, photocatalytic zinc ferrite films on SS-304 substrates by solution precursor plasma spraying (SPPS) has been demonstrated for the first time. Deposition parameters such as precursor solution pH, concentration, film thickness, plasma power and gun-substrate distance were found to control physico-chemical properties of the film, with respect to their crystallinity, phase purity, and morphology. Alkaline precursor conditions (7 2 O 4 film. Very high/low precursor concentrations yielded mixed phase, less adherent, and highly inhomogeneous thin films. Desired spinel phase was achieved in as-deposited condition under appropriately controlled spray conditions and exhibited a band gap of ∼1.9 eV. The highly porous nature of the films favored its photocatalytic performance as indicated by methylene blue de-coloration under solar radiation. These immobilized films display good potential for visible light photocatalytic applications.

  14. Zinc phthalocyanine thin film and chemical analyte interaction studies by density functional theory and vibrational techniques

    International Nuclear Information System (INIS)

    Saini, G S S; Singh, Sukhwinder; Kumar, Ranjan; Tripathi, S K; Kaur, Sarvpreet; Sathe, Vasant

    2009-01-01

    Thin films of zinc phthalocyanine have been deposited on KBr and glass substrates by the thermal evaporation method and characterized by the x-ray diffraction, optical, infrared and Raman techniques. The observed x-ray diffraction and infrared absorption spectra of as-deposited thin films suggest the presence of an α crystalline phase. Infrared and Raman spectra of thin films after exposure to vapours of ammonia and methanol have also been recorded. Shifts in the position of some IR and Raman bands in the spectra of exposed films have been observed. Some bands also show changes in their intensity on exposure. Increased charge on the phthalocyanine ring and out-of-plane distortion of the core due to interaction between zinc phthalocyanine and vapour molecules involving the fifth coordination site of the central metal ion may be responsible for the band shifts. Changes in the intensity of bands are interpreted in terms of the lowering of molecular symmetry from D 4h to C 4v due to doming of the core. Molecular parameters and Mulliken atomic charges of zinc phthalocyanine and its complexes with methanol and ammonia have been calculated from density functional theory. The binding energy of the complexes have also been calculated. Calculated values of the energy for different complexes suggest that axially coordinated vapour molecules form the most stable complex. Calculated Mulliken atomic charges show net charge transfer from vapour molecules to the phthalocyanine ring for the most stable complex.

  15. Alcohol vapor sensing by cadmium-doped zinc oxide thick films based chemical sensor

    Science.gov (United States)

    Zargar, R. A.; Arora, M.; Chackrabarti, S.; Ahmad, S.; Kumar, J.; Hafiz, A. K.

    2016-04-01

    Cadmium-doped zinc oxide nanoparticles were derived by simple chemical co-precipitation route using zinc acetate dihydrate and cadmium acetate dihydrate as precursor materials. The thick films were casted from chemical co-precipitation route prepared nanoparticles by economic facile screen printing method. The structural, morphological, optical and electrical properties of the film were characterized relevant to alcohol vapor sensing application by powder XRD, SEM, UV-VIS and DC conductivity techniques. The response and sensitivity of alcohol (ethanol) vapor sensor are obtained from the recovery curves at optimum working temperature range from 20∘C to 50∘C. The result shows that maximum sensitivity of the sensor is observed at 25∘C operating temperature. On varying alcohol vapor concentration, minor variation in resistance has been observed. The sensing mechanism of sensor has been described in terms of physical adsorption and chemical absorption of alcohol vapors on cadmium-doped zinc oxide film surface and inside film lattice network through weak hydrogen bonding, respectively.

  16. Study on the sulfidation behavior of smithsonite

    International Nuclear Information System (INIS)

    Wu, Dandan; Wen, Shuming; Deng, Jiushuai; Liu, Jian; Mao, Yingbo

    2015-01-01

    Highlights: • Zeta potential showed that the pH IEP of smithsonite decreased from 7.7 to 6. • ICP test showed the gradual reduction of C S in the solution. • SEM showed that the mineral surface was partially changed to ZnS film. • XPS indicated that the presence of a characteristic signal peak of sulfur ions. - Abstract: Zinc extraction from low-grade mineral resources of oxidized zinc has recently become a focus of study. Sulfidation is an important process in oxidized ore flotation. In this study, the influence of sulfur ion adsorption on smithsonite surface was investigated with the use of zeta potential, inductively coupled plasma (ICP), scanning electron microscope (SEM), and X-ray photoelectron spectroscopic studies. Zeta potential measurements of sodium sulfide showed that sulfur ions were adsorbed onto the surface of pure smithsonite, as evidenced by the increased negative charge and the decrease in the pH IEP of smithsonite from 7.7 to 6 after sodium sulfide treatment. The ICP test revealed the gradual reduction in sulfur ion adsorption onto the surface of smithsonite in pulp sulfur. After 30 min of absorption, C S in the solution declined from 1000 × 10 −6 mol/L to 1.4 × 10 −6 mol/L. SEM results showed that the mineral surface was partially changed to ZnS film after sodium sulfide treatment, whereas EDS analysis results showed that 2% S is contained on the smithsonite surface. X-ray photoelectron spectroscopy results indicated the presence of a characteristic signal peak of sulfur ions after sulfidation. Sulfur concentration increased to 11.89%, whereas oxygen concentration decreased from 42.31% to 13.74%. Sulfur ions were not only present during chemical adsorption, but were also incorporated into the crystal lattices of minerals by the exchange reaction between S 2− and CO 3 2− ions

  17. Formation of copper tin sulfide films by pulsed laser deposition at 248 and 355 nm

    DEFF Research Database (Denmark)

    Ettlinger, Rebecca Bolt; Crovetto, Andrea; Canulescu, Stela

    2016-01-01

    The influence of the laser wavelength on the deposition of copper tin sulfide (CTS) and SnS-rich CTS with a 248-nm KrF excimer laser (pulse length τ = 20 ns) and a 355-nm frequency-tripled Nd:YAG laser (τ = 6 ns) was investigated. A comparative study of the two UV wavelengths shows that the CTS...... film growth rate per pulse was three to four times lower with the 248-nm laser than the 355-nm laser. SnS-rich CTS is more efficiently ablated than pure CTS. Films deposited at high fluence have submicron and micrometer size droplets, and the size and area density of the droplets do not vary significantly...

  18. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

    KAUST Repository

    Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a

  19. Nanocrystalline zinc ferrite films studied by magneto-optical spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lišková-Jakubisová, E., E-mail: liskova@karlov.mff.cuni.cz; Višňovský, Š. [Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, Prague (Czech Republic); Široký, P.; Hrabovský, D.; Pištora, J. [Nanotechnology Center, VŠB-Technical University of Ostrava, 17. listopadu 15, 708 33 Ostrava-Poruba (Czech Republic); Sahoo, Subasa C. [Department of Physics, Central University of Kerala, Kasaragod, Kerala 671314 (India); Prasad, Shiva [Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India); Venkataramani, N. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India); Bohra, Murtaza [Okinawa Institute of Science and Technology Graduate University (OIST), Okinawa (Japan); Krishnan, R. [Groupe d' Etude de la Matière Condensée (GEMaC), CNRS-UVSQ, 45 Avenue des Etats-Unis, 78935 Versailles (France)

    2015-05-07

    Ferrimagnetic Zn-ferrite (ZnFe{sub 2}O{sub 4}) films can be grown with the ferromagnetic resonance linewidth of 40 Oe at 9.5 GHz without going through a high temperature processing. This presents interest for applications. The work deals with laser ablated ZnFe{sub 2}O{sub 4} films deposited at O{sub 2} pressure of 0.16 mbar onto fused quartz substrates. The films about 120 nm thick are nanocrystalline and their spontaneous magnetization, 4πM{sub s}, depends on the nanograin size, which is controlled by the substrate temperature (T{sub s}). At T{sub s} ≈ 350 °C, where the grain distribution peaks around ∼20–30 nm, the room temperature 4πM{sub s} reaches a maximum of ∼2.3 kG. The films were studied by magnetooptical polar Kerr effect (MOKE) spectroscopy at photon energies between 1 and 5 eV. The complementary characteristics were provided by spectral ellipsometry (SE). Both the SE and MOKE spectra confirmed ferrimagnetic ordering. The structural details correspond to those observed in MgFe{sub 2}O{sub 4} and Li{sub 0.5}Fe{sub 2.5}O{sub 4} spinels. SE experiments confirm the insulator behavior. The films display MOKE amplitudes somewhat reduced with respect to those in Li{sub 0.5}Fe{sub 2.5}O{sub 4} and MgFe{sub 2}O{sub 4} due to a lower degree of spinel inversion and nanocrystalline structure. The results indicate that the films are free of oxygen vacancies and Fe{sup 3+}-Fe{sup 2+} exchange.

  20. Damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Tohsophon, T.; Huepkes, J.; Calnan, S.; Reetz, W.; Rech, B.; Beyer, W.; Sirikulrat, N.

    2006-01-01

    The damp heat stability and subsequent vacuum annealing behavior of aluminum doped zinc oxide (AZO) films was investigated using Hall effect measurements, X-ray diffraction (XRD) and optical spectrometry techniques. The AZO films were deposited on glass or silicon wafers using reactive and non-reactive magnetron sputtering from metallic and ceramic targets, respectively. Additionally, we characterized surface textured AZO films, which are used as light scattering transparent conductive oxide (TCO) in silicon thin film solar cells. For all films a degradation of the electrical film properties was found after the damp heat treatment. For thick compact films, with large grain size, only a small increase in the electrical resistivity was observed, whereas less compact films prepared at high deposition pressures or very thin films (< 300 nm) showed an increase in resistivity by up to a factor of three already after 300 h. The conductivity degradation during damp heat treatment could be largely reversed by annealing in vacuum. However, annealing temperatures of at least 150 deg. C were required. Possible mechanisms explaining the experimental results are discussed

  1. Property elucidation of vacuum-evaporated zinc telluride thin film ...

    Indian Academy of Sciences (India)

    J U Ahamed

    2017-08-31

    Aug 31, 2017 ... method for the deposition of ZnTe thin film as compared to other methods. ... the advantages and disadvantages of different deposition process, it was ... by a spiral resistance heater and the temperature was measured by a ...

  2. The electronic structure of co-sputtered zinc indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Carreras, Paz; Antony, Aldrin; Bertomeu, Joan [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, 08028 Barcelona (Spain); Gutmann, Sebastian [Department of Chemistry, University of South Florida, Tampa, Florida 33620 (United States); Schlaf, Rudy [Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States)

    2011-10-01

    Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses {approx}50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO{sub 2} films.

  3. Evaluation of the optical axis tilt of zinc oxide films via noncollinear second harmonic generation

    International Nuclear Information System (INIS)

    Bovino, F. A.; Larciprete, M. C.; Belardini, A.; Sibilia, C.

    2009-01-01

    We investigated noncollinear second harmonic generation form zinc oxide films, grown on glass substrates by dual ion beam sputtering technique. At a fixed incidence angle, the generated signal is investigated by scanning the polarization state of both fundamental beams. We show that the map of the generated signal as a function of polarization states of both pump beams, together with the analytical curves, allows to retrieve the orientation of the optical axis and eventually, its angular tilt, with respect to the surface normal.

  4. Morphology dependent dye-sensitized solar cell properties of nanocrystalline zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, S.K., E-mail: sanjeevlrs732000@yahoo.co.in [Department of Information and Communication, Cheju Halla College, Jeju City 690 708 (Korea, Republic of); Inamdar, A.I.; Im, Hyunsik [Department of Semiconductor Science, Dongguk University, Seoul 100 715 (Korea, Republic of); Kim, B.G. [Department of Information and Communication, Cheju Halla College, Jeju City 690 708 (Korea, Republic of); Patil, P.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004 (India)

    2011-02-03

    Research highlights: > Nano-crystalline zinc oxide thin films were electrosynthesized from an aqueous zinc acetate [Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O] solution onto FTO coated conducting glass substrates using two different electrochemical routes, namely (i) without an organic surfactant and (ii) with an organic surfactant, viz. PVA (poly-vinyl alcohol) or SDS (sodium dodecyl sulfate). > The reproducibility of the catalytic activity of the SDS and PVA surfactants in the modification of the morphologies was observed. > Vertically aligned nest-like and compact structures were observed from the SDS and PVA mediated films, respectively, while the grain size in the ZnO thin films without an organic surfactant was observed to be {approx}150 nm. > The dye sensitized ZnO electrodes displayed excellent properties in the conversion process from light to electricity. The efficiencies of the surfactant mediated nanocrystalline ZnO thin films, viz. ZnO:SDS and ZnO:PVA, sensitized with ruthenium-II (N3) dye were observed to be 0.49% and 0.27%, respectively. - Abstract: Nano-crystalline zinc oxide thin films were electrosynthesized with an aqueous zinc acetate [Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O] solution on to FTO coated glass substrates. Two different electrochemical baths were used, namely (i) without an organic surfactant and (ii) with an organic surfactant, viz. PVA (poly-vinyl alcohol) and SDS (sodium dodecyl sulfate). The organic surfactants played an important role in modifying the surface morphology, which influenced the size of the crystallites and dye-sensitized solar cell (DSSC) properties. The vertically aligned thin and compact hexagonal crystallites were observed with SDS mediated films, while the grain size in the films without an organic surfactant was observed to be {approx}150 nm. The conversion efficiencies of the ZnO:SDS:Dye and ZnO:PVA:Dye thin films were observed to be 0.49% and 0.27%, respectively.

  5. pH effect on structural and optical properties of nanostructured zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Munef, R. A. [Kirkuk Iraq, Kirkuk university, college of science physics department, phone: 009647702180337, Iraq Rafeamonef@yahoo.com (Iraq)

    2015-03-30

    ZnO nanostructures were Deposited on Objekttrager glasses for various pH values by chemical bath deposition method using Zn (NO3)2·6H2O (zinc nitrate hexahydrate) solution at 75°C reaction temperature without any posterior treatments. The ZnO nanostructures obtained were characterized by X-ray Diffraction (XRD, UV). The structure was hexagonal and it was found that some peaks disappear with various pH values. The grain sizes of ZnO films increases from 22-to-29nm with increasing pH. The transmission of the films was (85-95%)

  6. Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

    International Nuclear Information System (INIS)

    Zheng Yanbin; Li Guang; Wang Wenlong; Li Xiuchang; Jiang Zhigang

    2012-01-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs. (plasma technology)

  7. Photocatalysis of zinc oxide nanotip array/titanium oxide film heterojunction prepared by aqueous solution deposition

    Science.gov (United States)

    Lee, Ming-Kwei; Lee, Bo-Wei; Kao, Chen-Yu

    2017-05-01

    A TiO2 film was prepared on indium tin oxide (ITO)/glass by aqueous solution deposition (ASD) with precursors of ammonium hexafluoro-titanate and boric acid at 40 °C. The photocatalysis of annealed TiO2 film increases with increasing growth time and decreases with increasing growth times longer than 60 min. A ZnO nanotip array was prepared on ZnO seed layer/TiO2 film/glass by aqueous solution deposition with precursors of zinc nitrate and ammonium hydroxide at 70 °C. The photocatalysis of ASD-ZnO/ASD-TiO2 film/ITO glass can be better than that of P25.

  8. Characteristics of zinc oxide nanorod array/titanium oxide film heterojunction prepared by aqueous solution deposition

    Science.gov (United States)

    Lee, Ming-Kwei; Hong, Min-Hsuan; Li, Bo-Wei

    2016-07-01

    The characteristics of a ZnO nanorod array/TiO2 film heterojunction were investigated. A TiO2 film was prepared on glass by aqueous solution deposition with precursors of ammonium hexafluorotitanate and boric acid at 40 °C. Then, a ZnO seed layer was prepared on a TiO2 film/glass substrate by RF sputtering. A vertically oriented ZnO nanorod array was grown on a ZnO seed layer/TiO2 film/glass substrate by aqueous solution deposition with precursors of zinc nitrate and hexamethylenetetramine (HMT) at 70 °C. After thermal annealing in N2O ambient at 300 °C, this heterojunction used as an oxygen gas sensor shows much better rise time, decay time, and on/off current ratio than as-grown and annealed ZnO nanorods.

  9. An anode with aluminum doped on zinc oxide thin films for organic light emitting devices

    International Nuclear Information System (INIS)

    Xu Denghui; Deng Zhenbo; Xu Ying; Xiao Jing; Liang Chunjun; Pei Zhiliang; Sun Chao

    2005-01-01

    Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150-bar o C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4x10 -4 Ωcm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm 2

  10. Fabrication and Corrosion Resistance of Superhydrophobic Hydroxide Zinc Carbonate Film on Aluminum Substrates

    Directory of Open Access Journals (Sweden)

    Jin Liang

    2013-01-01

    Full Text Available Superhydrophobic hydroxide zinc carbonate (HZC films were fabricated on aluminum substrate through a convenient in situ deposition process. Firstly, HZC films with different morphologies were deposited on aluminum substrates through immersing the aluminum substrates perpendicularly into aqueous solution containing zinc nitrate hexahydrate and urea. Secondly, the films were then modified with fluoroalkylsilane (FAS: CH3(CF26(CH23Si(OCH33 molecules by immersing in absolute ethanol solution containing FAS. The morphologies, hydrophobicity, chemical compositions, and bonding states of the films were analyzed by scanning electron microscopy (SEM, water contact angle measurement (CA, Fourier transform infrared spectrometer (FTIR, and X-ray photoelectron spectroscopy (XPS, respectively. It was shown by surface morphological observation that HZC films displayed different microstructures such as microporous structure, rose petal-like structure, block-shaped structure, and pinecone-like structure by altering the deposition condition. A highest water contact angle of 156.2° was obtained after FAS modification. Moreover, the corrosion resistance of the superhydrophobic surface on aluminum substrate was investigated using electrochemical impedance spectroscopy (EIS measurements. The EIS measurements’ results revealed that the superhydrophobic surface considerably improved the corrosion resistance of aluminum.

  11. Effect of tri-sodium citrate concentration on structural, optical and electrical properties of chemically deposited tin sulfide films

    Energy Technology Data Exchange (ETDEWEB)

    Gode, F., E-mail: ftmgode@gmail.com [Department of Physics, Mehmet Akif Ersoy University, 15030 Burdur (Turkey); Guneri, E. [Department of Primary Education, Erciyes University, 38039 Kayseri (Turkey); Baglayan, O. [Department of Physics, Anadolu University, 26470 Eskisehir (Turkey)

    2014-11-01

    Graphical abstract: - Highlights: • SnS thin films grown by CBD in different concentration of tri-sodium citrate. • Grain size increases, while surface roughness decreases, with concentration. • Optical band gap decreases from 1.40 eV to 1.17 eV with increasing concentration. • Electrical conductivity improves with increasing concentration. - Abstract: Tin sulfide thin films were deposited onto glass substrates by chemical bath deposition. The effects of molar concentration of the complexing agent, tri-sodium citrate, on the structural, morphological, optical and electrical properties of the films were investigated. The films are characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, optical absorption spectroscopy and Hall effect measurements. Polycrystalline film structure in orthorhombic phase was determined. Flower-like spherical grains are observed on the surface. While their average size increased from 345 nm to 750 nm when the tri-sodium citrate concentration was increased from 6.4 × 10{sup −3} M to 8.0 × 10{sup −3} M, the surface roughness varied in an opposite manner from approximately 120.18 nm to 29.36 nm. For these concentrations, optical band gap of the films decreased from 1.40 eV to 1.17 eV, whereas the Hall conductivity, mobility and carrier concentration of the films increased slightly from 5.91 × 10{sup −5} to 8.78 × 10{sup −5} (Ω cm){sup −1}, from 148 to 228 cm{sup 2} V{sup −1} s{sup −1} and from 1.73 × 10{sup 12} to 3.59 × 10{sup 12} cm{sup −1}, respectively.

  12. Composition and properties of nanocrystalline Zn S thin films prepared by a new chemical bath deposition route

    International Nuclear Information System (INIS)

    Sahraei, R.; Goudarzi, A.; Ahmadpoor, H.; Motedayen Aval, Gh.

    2006-01-01

    Zinc sulfide nanocrystalline thin films were prepared by a new chemical bath deposition route on soda lime glass and quartz substrates using a weak acidic bath, in which disodium salt of ethylenediaminetetraacetic acid (EDTA) acts as a complexing agent and thioacetamide acts as a source of sulfide ions. The thickness of the films varied from a few nm to 500 nm. The chemical composition of films was studied by energy-dispersive X-ray analyzer and Fourier transform infrared spectroscopy. The films are very close to Zinc sulfide stoichiometry and we did not observed any organic compounds in the impurity form in them. X-ray diffraction indicates that the film and powder formed in the same reaction bath have cubic zinc blende structure. The films have high transmittance of about 75% in the visible region. The optical band-gap energy (E g ) was determined to be 3.75 eV from the absorption spectrophotometry measurements.

  13. Patterned transparent zinc oxide films produced by sol-gel embossing

    Energy Technology Data Exchange (ETDEWEB)

    Rao, J.; Koh, L.H.K.; Crean, G.M. [Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland); Department of Microelectronic Engineering, University College Cork, Cork (Ireland); O' Brien, S. [Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland); Winfield, R.J.

    2008-08-15

    A low cost zinc oxide embossing technique is reported as a method of fabricating structures relevant to a variety of applications. A zinc based sol-gel material was prepared from zinc acetate[Zn(C{sub 2}H{sub 3}O{sub 2}){sub 2}], monoethanolamine[H{sub 2}NC{sub 2}H{sub 4}OH] and isopropanol. The sol-gel was cast into a polydimethylsiloxane (PDMS) mould a track design, placed in contact with the substrate and dried under vacuum at 70 C for 3 hours. The formed track pattern was further densified to provide a stable conductor film that retained the embossed shape. An optimum Zn sol-gel content of 0.6 M was identified. The embossed films had a transparency of greater than 83% in the visible region. The optical bandgap energy was evaluated to be 3.306 eV. The influence of ZnO sol-gel film synthesis and embossing parameters on the microstructure, morphology and optical transparency of fabricated structures is described. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Aluminum-doped zinc oxide thin films grown on various substrates using facing target sputtering system

    Science.gov (United States)

    Kim, Hwa-Min; Lee, Chang Hyun; Shon, Sun Young; Kim, Bong Hwan

    2017-11-01

    Aluminum-doped zinc oxide (AZO) films were fabricated on various substrates, such as glass, polyethylene naphthalate (PEN), and polyethylene terephthalate (PET), at room temperature using a facing target sputtering (FTS) system with hetero ZnO and Al2O3 targets, and their electrical and optical properties were investigated. The AZO film on glass exhibited compressive stress while the films on the plastic substrates showed tensile stress. These stresses negatively affected the crystalline quality of the AZO films, and it is suggested that the poor crystalline quality of the films may be related to the neutral Al-based defect complexes formed in the films; these complexes act as neutral impurity scattering centers. AZO films with good optoelectronic properties could be formed on the glass and plastic substrates by the FTS technique using the hetero targets. The AZO films deposited on the glass, PEN, and PET substrates showed very low resistivities, of 5.0 × 10-4 Ω cm, 7.0 × 10-4 Ω cm, and 7.4 × 10-4 Ω cm, respectively. Further, the figure merit of the AZO film formed on the PEN substrate in the visible range (400-700 nm) was significantly higher than that of the AZO film on PET and similar to that of the AZO film on glass. Finally, the average transmittances of the films in the visible range (400-700 nm) were 83.16% (on glass), 76.3% (on PEN), and 78.16% (on PET).

  15. Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films

    International Nuclear Information System (INIS)

    Shinde, S S; Shinde, P S; Bhosale, C H; Rajpure, K Y

    2008-01-01

    Indium doped zinc oxide (IZO) thin films are grown onto Corning glass substrates using the spray pyrolysis technique. The effect of doping concentration on the structural, electrical and optical properties of IZO thin films is studied. X-ray diffraction studies show a change in preferential orientation from the (0 0 2) to the (1 0 1) crystal planes with increase in indium doping concentration. Scanning electron microscopy studies show polycrystalline morphology of the films. Based on the Hall-effect measurements and analysis, impurity scattering is found to be the dominant mechanism determining the diminished mobility in ZnO thin films having higher indium concentration. The addition of indium also induces a drastic decrease in the electrical resistivity of films; the lowest resistivity (4.03 x 10 -5 Ω cm) being observed for the film deposited with 3 at% indium doping. The effect of annealing on the film properties has been reported. Films deposited with 3 at% In concentration have relatively low resistivity with 90% transmittance at 550 nm and the highest value of figure of merit 7.9 x 10 -2 □ Ω -1

  16. The zinc-loss effect and mobility enhancement of DUV-patterned sol-gel IGZO thin-film transistors

    Science.gov (United States)

    Wang, Kuan-Hsun; Zan, Hsiao-Wen; Soppera, Olivier

    2018-03-01

    We investigate the composition of the DUV-patterned sol-gel indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) and observe a significant zinc loss effect during developing when the DUV exposure is insufficient. The zinc loss, however, is beneficial for increasing the mobility. Reducing zinc to indium composition ratio from 0.5 to 0.02 can effectively increase mobility from 0.27 to 7.30 cm2 V-1 s-1 when the gallium to indium ratio is fixed as 0.25 and the post annealing process is fixed as 300 °C for 2 h. On the other hand, an IGO TFT fails to deliver a uniform film and a reproducible TFT performance, revealing the critical role of zinc in forming homogeneous IGZO TFTs.

  17. Photoconductivity study of acid on Zinc phthalocyanine pyridine thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Sukhwinder, E-mail: ss7667@gmail.com [Department of Physics, Govt. College for Girls, Ludhiana (India); Saini, G. S. S.; Tripathi, S. K. [Department of Physics, Panjab University, Chandigarh (India)

    2016-05-06

    The Metal Phthalocyanine (MPc) have attracted much interest because of chemical and high thermal stability. Molecules forming a crystal of MPc are held together by weak attractive Vander Waals forces. Organic semiconductors have π conjugate bonds which allow electrons to move via π-electron cloud overlaps. Conduction mechanisms for organic semiconductor are mainly through tunneling; hopping between localized states, mobility gaps, and phonon assisted hopping. The photo conductivity of thin films of these complexes changes when exposed to oxidizing and reducing gases. Arrhenius plot is used to find the thermal activation energy in the intrinsic region and impurity scattering region. Arrhenius plotsare used to find the thermal activation energy.

  18. High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method

    Science.gov (United States)

    Lin, Yung-Hao; Lee, Ching-Ting

    2017-08-01

    High-quality indium gallium zinc aluminum oxide (IGZAO) thin films with various Al contents have been deposited using the vapor cooling condensation method. The electron mobility of the IGZAO films was improved by 89.4% on adding Al cation to IGZO film. The change in the electron concentration and mobility of the IGZAO films was 7.3% and 7.0%, respectively, when the temperature was changed from 300 K to 225 K. These experimental results confirm the high performance and stability of the IGZAO films. The performance stability mechanisms of IGZAO thin-film transistors (TFTs) were investigated in comparison with IGZO TFTs.

  19. Structure evolution of zinc oxide thin films deposited by unbalance DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Aryanto, Didik, E-mail: didi027@lipi.go.id [Research Center for Physics, Indonesian Institute of Sciences, Serpong 15314, Tangerang Selatan (Indonesia); Materials Research Group, Physics Department, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Marwoto, Putut; Sugianto [Physics Department, Faculty of Mathematics and Science, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Materials Research Group, Physics Department, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Sudiro, Toto [Research Center for Physics, Indonesian Institute of Sciences, Serpong 15314, Tangerang Selatan (Indonesia); Birowosuto, Muhammad D. [Research Center for Physics, Indonesian Institute of Sciences, Serpong 15314, Tangerang Selatan (Indonesia); CINTRA UMI CNRS/NTU/THALES 3288 Research Techno Plaza, 50 Nanyang Drive, Border X Block, level 6, 637553 (Singapore); Sulhadi [Physics Department, Faculty of Mathematics and Science, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia)

    2016-04-19

    Zinc oxide (ZnO) thin films are deposited on corning glass substrates using unbalanced DC magnetron sputtering. The effect of growth temperature on surface morphology and crystallographic orientation of ZnO thin film is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The surface morphology and crystallographic orientation of ZnO thin film are transformed against the increasing of growth temperature. The mean grain size of film and the surface roughness are inversely and directly proportional towards the growth temperature from room temperature to 300 °C, respectively. The smaller grain size and finer roughness of ZnO thin film are obtained at growth temperature of 400 °C. The result of AFM analysis is in good agreement with the result of XRD analysis. ZnO thin films deposited in a series of growth temperatures have hexagonal wurtzite polycrystalline structures and they exhibit transformations in the crystallographic orientation. The results in this study reveal that the growth temperature strongly influences the surface morphology and crystallographic orientation of ZnO thin film.

  20. Indium zinc oxide films deposited on PET by LF magnetron sputtering

    International Nuclear Information System (INIS)

    Kim, Eun Lyoung; Jung, Sang Kooun; Sohn, Sang Ho; Park, Duck Kyu

    2007-01-01

    Indium zinc oxide (IZO) has attracted much attention recently for use in transparent oxide films compared with the ITO film. We carried out the deposition of IZO on a polyethylene terapthalate (PET) substrate at room temperature by a low-frequency (LF) magnetron sputtering system. These films have amorphous structures with excellent electrical stability, surface uniformity and high optical transmittance. The effects of LF applied voltage and O 2 flow rate were investigated. The electrical and optical properties were studied. At optimal deposition conditions, thin films of IZO with a sheet resistance of 32 Ω/sq and an optical transmittance of over 80% in the visible spectrum range were achieved. The IZO thin films fabricated by this method do not require substrate heating during the film preparation of any additional post-deposition annealing treatment. The experimental results show that films with good qualities of surface morphology, transmittance and electrical conduction can be grown by the LF magnetron sputtering method on PET which is recommendable

  1. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, B. Rajesh, E-mail: rajphyind@gmail.com [Department of Physics, GITAM Institute of Technology, GITAM University, Visakhapatnam - 530 045, A.P. (India); Rao, T. Subba, E-mail: thotasubbarao6@gmail.com [Department of Physics, Sri Krishnadevaraya University, Anantapuramu - 515 003, A.P. (India)

    2014-10-15

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  2. Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films

    International Nuclear Information System (INIS)

    Shinde, S.S.; Shinde, P.S.; Oh, Y.W.; Haranath, D.; Bhosale, C.H.; Rajpure, K.Y.

    2012-01-01

    Highlights: ► The ecofriendly deposition of Ga-doped zinc oxide. ► Influence of Ga doping onto physicochemical properties in aqueous media. ► Electron–phonon coupling by Raman. ► Chemical bonding structure and valence band analysis by XPS. - Abstract: Ga-doped ZnO thin films are synthesized by chemical spray pyrolysis onto corning glass substrates in aqueous media. The influence of gallium doping on to the photoelectrochemical, structural, Raman, XPS, morphological, optical, electrical, photoluminescence and thermal properties have been investigated in order to achieve good quality films. X-ray diffraction study depicts the films are polycrystalline and fit well with hexagonal (wurtzite) crystal structure with strong orientations along the (0 0 2) and (1 0 1) planes. Presence of E 2 high mode in Raman spectra indicates that the gallium doping does not change the wurtzite structure. The coupling strength between electron and LO phonon has experimentally estimated. In order to understand the chemical bonding structure and electronic states of the Ga-doped ZnO thin films XPS analysis have been studied. SEM images shows the films are adherent, compact, densely packed with hexagonal flakes and spherical grains. Optical transmittance and reflectance measurements have been carried out. Room temperature PL spectra depict violet, blue and green emission in deposited films. The specific heat and thermal conductivity study shows the phonon conduction behavior is dominant in these polycrystalline films.

  3. Superconductivity in transparent zinc-doped In2O3 films having low carrier density

    Directory of Open Access Journals (Sweden)

    Kazumasa Makise, Nobuhito Kokubo, Satoshi Takada, Takashi Yamaguti, Syunsuke Ogura, Kazumasa Yamada, Bunjyu Shinozaki, Koki Yano, Kazuyoshi Inoue and Hiroaki Nakamura

    2008-01-01

    Full Text Available Thin polycrystalline zinc-doped indium oxide (In2O3–ZnO films were prepared by post-annealing amorphous films with various weight concentrations x of ZnO in the range 0≤x ≤0.06. We have studied the dependences of the resistivity ρ and Hall coefficient on temperature T and magnetic field H in the range 0.5≤T ≤300 K, H≤6 Tfor 350 nm films annealed in air. Films with 0≤x≤0.03 show the superconducting resistive transition. The transition temperature Tc is below 3.3 K and the carrier density n is about 1025–1026 m−3. The annealed In2O3–ZnO films were examined by transmission electron microscopy and x-ray diffraction analysis revealing that the crystallinity of the films depends on the annealing time. We studied the upper critical magnetic field Hc2 (T for the film with x = 0.01. From the slope of dHc2 /dT, we obtain the coherence length ξ (0 ≈ 10 nm at T = 0 K and a coefficient of electronic heat capacity that is small compared with those of other oxide materials.

  4. Active Bilayer PE/PCL Films for Food Packaging Modified with Zinc Oxide and Casein

    Directory of Open Access Journals (Sweden)

    Ana Rešček

    2015-12-01

    Full Text Available This paper studies the properties of active polymer food packaging bilayer polyethylene/polycaprolactone (PE/PCL films. Such packaging material consists of primary PE layer coated with thin film of PCL coating modified with active component (zinc oxide or zinc oxide/casein complex with intention to extend the shelf life of food and to maintain the quality and health safety. The influence of additives as active components on barrier, mechanical, thermal and antimicrobial properties of such materials was studied. The results show that, in comparison to the neat PE and PE/PCL films, some of PE/PCL bilayer films with additives exhibit improved barrier properties i.e. decreased water vapour permeability. Higher thermal stability of modified PE/PCL material is obtained due to a modified mechanism of thermal degradation. The samples with the additive nanoparticles homogeneously dispersed in the polymer matrix showed good mechanical properties. Addition of higher ZnO content contributes to the enhanced antibacterial activity of a material.

  5. Study on the surface sulfidization behavior of smithsonite at high temperature

    Science.gov (United States)

    Lv, Jin-fang; Tong, Xiong; Zheng, Yong-xing; Xie, Xian; Wang, Cong-bing

    2018-04-01

    Surface sulfidization behavior of smithsonite at high temperature was investigated by X-ray powder diffractometer (XRD) along with thermodynamic calculation, X-ray photoelectron spectroscopy (XPS) and electron probe microanalysis (EPMA). The XRD and thermodynamic analyses indicated that the smithsonite was decomposed into zincite at high temperatures. After introducing a small amount of pyrite, artificial sulfides were formed at surface of the obtained zincite. The XPS analyses revealed that the sulfide species including zinc sulfide and zinc disulfide were generated at the zincite surface. The EPMA analyses demonstrated that the film of sulfides was unevenly distributed at the zincite surface. The average concentration of elemental sulfur at the sample surface increased with increasing of pyrite dosage. A suitable mole ratio of FeS2 to ZnCO3 for the surface thermal modification was determined to be about 0.3. These findings can provide theoretical support for improving the process during which the zinc recovery from refractory zinc oxide ores is achieved by xanthate flotation.

  6. Facile synthesis of cobalt-doped zinc oxide thin films for highly efficient visible light photocatalysts

    Energy Technology Data Exchange (ETDEWEB)

    Altintas Yildirim, Ozlem, E-mail: ozlemaltintas@gmail.com [Department of Metallurgical and Materials Engineering, Selcuk University, Konya (Turkey); Arslan, Hanife; Sönmezoğlu, Savaş [Department of Metallurgical and Materials Engineering, Karamanoglu Mehmetbey University, Karaman (Turkey); Nanotechnology R& D Laboratory, Karamanoglu Mehmetbey University, Karaman (Turkey)

    2016-12-30

    Highlights: • Photocatalytically active Co-ZnO thin film was obtained by sol-gel method. • Co{sup 2+} doping narrowed the band gap of pure ZnO to an extent of 3.18 eV. • Co-ZnO was effective in MB degradation under visible light. • Optimum dopant content to show high performance was 3 at.%. - Abstract: Cobalt-doped zinc oxide (Co:ZnO) thin films with dopant contents ranging from 0 to 5 at.% were prepared using the sol–gel method, and their structural, morphological, optical, and photocatalytic properties were characterized. The effect of the dopant content on the photocatalytic properties of the films was investigated by examining the degradation behavior of methylene blue (MB) under visible light irradiation, and a detailed investigation of their photocatalytic activities was performed by determining the apparent quantum yields (AQYs). Co{sup 2+} ions were observed to be substitutionally incorporated into Zn{sup 2+} sites in the ZnO crystal, leading to lattice parameter constriction and band gap narrowing due to the photoinduced carriers produced under the visible light irradiation. Thus, the light absorption range of the Co:ZnO films was improved compared with that of the undoped ZnO film, and the Co:ZnO films exhibited highly efficient photocatalytic activity (∼92% decomposition of MB after 60-min visible light irradiation for the 3 at.% Co:ZnO film). The AQYs of the Co:ZnO films were greatly enhanced under visible light irradiation compared with that of the undoped ZnO thin film, demonstrating the effect of the Co doping level on the photocatalytic activity of the films.

  7. Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Xue Zhang

    2017-07-01

    Full Text Available We investigated the influence of low-concentration indium (In doping on the chemical and structural properties of solution-processed zinc oxide (ZnO films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs. The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

  8. Optical constants and band edge of amorphous zinc oxide thin films

    International Nuclear Information System (INIS)

    Khoshman, Jebreel M.; Kordesch, Martin E.

    2007-01-01

    The optical characteristics of amorphous zinc oxide (a-ZnO) thin films grown by radio frequency reactive magnetron sputtering on various substrates at temperature -8 -0.32, respectively. The band edge of the films on Si (100) and quartz has been determined by spectroscopic ellipsometry (3.39 ± 0.05 eV) and spectrophotometric (3.35 ± 0.05 eV) methods, respectively. From the angle dependence of the p-polarized reflectivity we deduce a Brewster angle of 60.5 deg. Measurement of the polarized optical properties shows a high transmissivity (81%-99%) and low absorptivity (< 5%) in the visible and near infrared regions at different angles of incidence. Also, we found that there was a higher absorptivity for wavelength < 370 nm. This wavelength, ∼ 370 nm, therefore indicated that the band edge for a-ZnO thin films is about 3.35 eV

  9. Cholesterol biosensor based on rf sputtered zinc oxide nanoporous thin film

    International Nuclear Information System (INIS)

    Singh, S. P.; Arya, Sunil K.; Pandey, Pratibha; Malhotra, B. D.; Saha, Shibu; Sreenivas, K.; Gupta, Vinay

    2007-01-01

    Cholesterol oxidase (ChOx) has been immobilized onto zinc oxide (ZnO) nanoporous thin films grown on gold surface. A preferred c-axis oriented ZnO thin film with porous surface morphology has been fabricated by rf sputtering under high pressure. Optical studies and cyclic voltammetric measurements show that the ChOx/ZnO/Au bioelectrode is sensitive to the detection of cholesterol in 25-400 mg/dl range. A relatively low value of enzyme's kinetic parameter (Michaelis-Menten constant) ∼2.1 mM indicates enhanced enzyme affinity of ChOx to cholesterol. The observed results show promising application of nanoporous ZnO thin film for biosensing application without any functionalization

  10. The effect of zinc thickness on corrosion film breakdown of Colombian galvanized steel

    Science.gov (United States)

    Sandoval-Amador, A.; E Torres Ramirez, J.; Cabrales-Villamizar, P. A.; Laverde Cataño, D.; Y Peña-Ballesteros, D.

    2017-12-01

    This work studies the corrosion behaviour of Colombian galvanized steel in solutions of chloride and sulphate ions. The effect of the thickness and exposure time on the film’s breakdown susceptibility and protectiveness of the corrosion products were studied using potentiodynamic polarization curves and electrochemical impedance spectroscopy. The corrosion products were analysed using SEM-EDS and XRD. The samples with a higher thickness level in the zinc film (Z180) have the lowest corrosion rate. In this case, one of the products that was formed by the chemical reactions that occurred was Zinc hydroxide, which exhibits a passive behaviour as observed in the Pourbaix curves of the obtained potentials and in how the different Ph levels of the solutions worked. The sheets with the highest thickness (Z180) had the best performance, since at the end of the study they showed the least amount of damage on the surface of the zinc layer. This is because the thickness of the zinc layer favours the formation of simonkolleite, which is the corrosion product that protects the material under the conditions of the study.

  11. Electrical bistability and charge-transport mechanisms in cuprous sulfide nanosphere-poly(N-vinylcarbazole) composite films

    International Nuclear Information System (INIS)

    Tang Aiwei; Teng Feng; Liu Jie; Wang Yichao; Peng Hongshang; Hou Yanbing; Wang Yongsheng

    2011-01-01

    In this study, electrically bistable devices were fabricated by incorporating cuprous sulfide (Cu 2 S) nanospheres with mean size less than 10 nm into a poly(N-vinylcarbazole) (PVK) matrix. A remarkable electrical bistability was clearly observed in the current–voltage curves of the devices due to an electric-field-induced charge transfer between the dodecanethiol-capped Cu 2 S nanospheres and PVK. The maximum ON/OFF current ratio reached up to value as large as 10 4 , which was dependent on the mass ratios of Cu 2 S nanospheres to PVK, the amplitude of the scanning voltages, and the film thickness. The charge-transport mechanisms of the electrically bistable devices were described on the basis of the experimental results using different theoretical models of organic electronics.

  12. Controlling electrodeposited ultrathin amorphous Fe hydroxides film on V-doped nickel sulfide nanowires as efficient electrocatalyst for water oxidation

    Science.gov (United States)

    Shang, Xiao; Yan, Kai-Li; Lu, Shan-Shan; Dong, Bin; Gao, Wen-Kun; Chi, Jing-Qi; Liu, Zi-Zhang; Chai, Yong-Ming; Liu, Chen-Guang

    2017-09-01

    Developing cost-effective electrocatalysts with both high activity and stability remains challenging for oxygen evolution reaction (OER) in water electrolysis. Herein, based on V-doped nickel sulfide nanowire on nickel foam (NiVS/NF), we further conduct controllable electrodeposition of Fe hydroxides film on NiVS/NF (eFe/NiVS/NF) to further improve OER performance and stability. For comparison, ultrafast chemical deposition of Fe hydroxides on NiVS/NF (uFe/NiVS/NF) is also utilized. V-doping of NiVS/NF may introduce more active sites for OER, and nanowire structure can expose abundant active sites and facilitate mass transport. Both of the two depositions generate amorphous Fe hydroxides film covering on the surface of nanowires and lead to enhanced OER activities. Furthermore, electrodeposition strategy realizes uniform Fe hydroxides film on eFe/NiVS/NF confirmed by superior OER activity of eFe/NiVS/NF than uFe/NiVS/NF with relatively enhanced stability. The OER activity of eFe/NiVS/NF depends on various electrodepositon time, and the optimal time (15 s) is obtained with maximum OER activity. Therefore, the controllable electrodeposition of Fe may provide an efficient and simple strategy to enhance the OER properties of electrocatalysts.

  13. Super-hydrophilic copper sulfide films as light absorbers for efficient solar steam generation under one sun illumination

    Science.gov (United States)

    Guo, Zhenzhen; Ming, Xin; Wang, Gang; Hou, Baofei; Liu, Xinghang; Mei, Tao; Li, Jinhua; Wang, Jianying; Wang, Xianbao

    2018-02-01

    Solar steam technology is one of the simplest, most direct and effective ways to harness solar energy through water evaporation. Here, we report the development using super-hydrophilic copper sulfide (CuS) films with double-layer structures as light absorbers for solar steam generation. In the double-layer structure system, a porous mixed cellulose ester (MCE) membrane is used as a supporting layer, which enables water to get into the CuS light absorbers through a capillary action to provide continuous water during solar steam generation. The super-hydrophilic property of the double-layer system (CuS/MCE) leads to a thinner water film close to the air-water interface where the surface temperature is sufficiently high, leading to more efficient evaporation (˜80 ± 2.5%) under one sun illumination. Furthermore, the evaporation efficiencies still keep a steady value after 15 cycles of testing. The super-hydrophilic CuS film is promising for practical application in water purification and evaporation as a light absorption material.

  14. Photoconductivity study of acid on Zinc phthalocyanine pyridine thin films

    Science.gov (United States)

    Singh, Sukhwinder; Saini, G. S. S.; Tripathi, S. K.

    2016-05-01

    The Metal Phthalocyanine (MPc) have attracted much interest because of chemical and high thermal stability. Molecules forming a crystal of MPc are held together by weak attractive Vander Waals forces. Organic semiconductors have π conjugate bonds which allow electrons to move via π-electron cloud overlaps. Conduction mechanisms for organic semiconductor are mainly through tunneling; hopping between localized states, mobility gaps, and phonon assisted hopping. The photo conductivity of thin films of these complexes changes when exposed to oxidizing and reducing gases. Arrhenius plot is used to find the thermal activation energy in the intrinsic region and impurity scattering region. Arrhenius plotsare used to find the thermal activation energy. The original version of this article supplied to AIP Publishing contained erroneous text at the end of the abstract. "Arrhenius plots are used to find the thermal activation energy." was deleted as it does not pertain to the article. In addition, a figure citation was cited incorrectly and an equation was missing. This has been corrected in the updated version republished on 4 December 2017.

  15. Performance evaluation of cassava starch-zinc nanocomposite film for tomatoes packaging

    Directory of Open Access Journals (Sweden)

    Adeshina Fadeyibi

    2017-05-01

    Full Text Available Biodegradable nanocomposite films are novel materials for food packaging because of their potential to extend the shelf life of food. In this research, the performance of cassava starch-zincnanocomposite film was evaluated for tomatoes packaging. The films were developed by casting the solutions of 24 g cassava starch, 0-2% (w/w zinc nanoparticles and 55% (w/w glycerol in plastic mould of 12 mm depth. The permeability of the films, due to water and oxygen, was investigated at 27°C and 65% relative humidity while the mechanical properties were determined by nanoindentation technique. The average thickness of the dried nanocomposite films was found to be 17±0.13 μm. The performances of films for tomatoes packaging was evaluated in comparison with low density polyethylene (LDPE; 10 μm at the temperature and period ranges of 10-27°C and 0-9 days, respectively. The quality and microbial attributes of the packaged tomatoes, including ascorbic acid, β-carotene and total coliform were analysed at an interval of 3 days. The results revealed that the water vapour permeability increased while the oxygen permeability decreased with the nanoparticles (P<0.05. The hardness, creep, elastic and plastic works, which determined the plasticity index of the film, decreased generally with the nanoparticles. The films containing 1 and 2% of the nanoparticles suppressed the growth of microorganisms and retained the quality of tomatoes than the LDPE at 27°C and day-9 of packaging (P<0.05. The results implied that the film could effectively be used for tomatoes packaging due to their lower oxygen permeability, hardness, elastic and plastic works.

  16. Multi-layered zinc oxide-graphene composite thin films for selective nitrogen dioxide sensing

    Science.gov (United States)

    Ghosh, A.; Bhowmick, T.; Majumder, S. B.

    2018-02-01

    In the present work, selective nitrogen dioxide (NO2) sensing characteristics of multi-layered graphene-zinc oxide (G-ZnO) thin films have been demonstrated at 150 °C. The response% of 5 ppm NO2 was measured to be 894% with response and recovery times estimated to be 150 s and 315 s, respectively. In these composite films, the interaction between graphene and zinc oxide is established through X-ray photoelectron spectroscopy in conjunction with the analyses of photoluminescence spectra. Superior NO2 sensing of these films is due to simultaneous chemiadsorption of molecular oxygen and NO2 gases onto graphene and ZnO surfaces, resulting in an appreciable increase in the depletion layer width and thereby the sensor resistance. The sensor responses for other reducing gases (viz., CO, H2, and i-C4H10) are postulated to be due to their catalytic oxidation on the sensor surface, resulting in a decrease in the sensor resistance upon gas exposure. At lower operating temperature, due to the molecular nature of the chemiadsorbed oxygen, poor catalytic oxidation leads to a far lower sensor response for reducing gases as compared to NO2. For mixed NO2 and reducing gas sensing, we have reported that fast Fourier transformation of the resistance transients of all these gases in conjunction with principal component analyses forms a reasonably distinct cluster and, therefore, could easily be differentiated.

  17. Temperature Dependence of the Seebeck Coefficient in Zinc Oxide Thin Films

    Science.gov (United States)

    Noori, Amirreza; Masoumi, Saeed; Hashemi, Najmeh

    2017-12-01

    Thermoelectric devices are reliable tools for converting waste heat into electricity as they last long, produce no noise or vibration, have no moving elements, and their light weight makes them suitable for the outer space usage. Materials with high thermoelectric figure of merit (zT) have the most important role in the fabrication of efficient thermoelectric devices. Metal oxide semiconductors, specially zinc oxide has recently received attention as a material suitable for sensor, optoelectronic and thermoelectric device applications because of their wide direct bandgap, chemical stability, high-energy radiation endurance, transparency and acceptable zT. Understanding the thermoelectric properties of the undoped ZnO thin films can help design better ZnO-based devices. Here, we report the results of our experimental work on the thermoelectric properties of the undoped polycrystalline ZnO thin films. These films are deposited on alumina substrates by thermal evaporation of zinc in vacuum followed by a controlled oxidation process in air carried out at the 350-500 °C temperature range. The experimental setup including gradient heaters, thermometry system and Seebeck voltage measurement equipment for high resistance samples is described. Seebeck voltage and electrical resistivity of the samples are measured at different conditions. The observed temperature dependence of the Seebeck coefficient is discussed.

  18. Photoelectrocatalytic degradation of oxalic acid by spray deposited nanocrystalline zinc oxide thin films

    International Nuclear Information System (INIS)

    Shinde, S.S.; Shinde, P.S.; Sapkal, R.T.; Oh, Y.W.; Haranath, D.; Bhosale, C.H.; Rajpure, K.Y.

    2012-01-01

    Highlights: ► Influence of substrate temperature onto the physico-chemical properties. ► Photochemical, structural, luminescent, optoelectrical and thermal properties. ► The kinetics of oxalic acid degradation with reaction mechanism. ► Extent of mineralization by COD and TOC. - Abstract: The high quality nano-crystalline zinc oxide thin films are deposited onto corning glasses by spray pyrolysis technique. The influence of reaction temperature onto their photoelectrochemical, structural, morphological, optoelectronic, luminescence and thermal properties has been investigated. The structural characteristics studied by X-ray diffractometry has complemented by resistivity measurements and UV–Vis spectroscopy. The photoelectrochemical activity shows enhancement in short circuit current (I sc = 0.357 mA) and open circuit voltage (V oc = 0.48 V). Direct band gap calculated by considering R and T values of ZnO thin films increases from 3.14–3.21 eV exhibiting a slight blue shift in band edge. Three characteristic luminescence peaks having near band-edge, blue and green emission are observed in the photoluminescence spectra. The specific heat and thermal conductivity study shows the phonon conduction behavior is dominant in films. Photocatalytic degradation of oxalic acid followed with reaction mechanism by using zinc oxide photoelectrode under solar illumination has been investigated.

  19. Photoconductivity, photoluminescence and optical Kerr nonlinear effects in zinc oxide films containing chromium nanoclusters

    International Nuclear Information System (INIS)

    Torres-Torres, C.; García-Cruz, M.L.; Castañeda, L.; Rangel Rojo, R.; Tamayo-Rivera, L.; Maldonado, A.; Avendaño-Alejo, M.

    2012-01-01

    Chromium doped zinc oxide thin solid films were deposited on soda–lime glass substrates. The photoconductivity of the material and its influence on the optical behavior was evaluated. A non-alkoxide sol–gel synthesis approach was used for the preparation of the samples. An enhancement of the photoluminescence response exhibited by the resulting photoconductive films with embedded chromium nanoclusters is presented. The modification in the photoconduction induced by a 445 nm wavelength was measured and then associated with the participation of the optical absorptive response. In order to investigate the third order optical nonlinearities of the samples, a standard time-resolved Optical Kerr Gate configuration with 80 fs pulses at 830 nm was used and a quasi-instantaneous pure electronic nonlinearity without the contribution of nonlinear optical absorption was observed. We estimate that from the inclusion of Cr nanoclusters into the sample results a strong optical Kerr effect originated by quantum confinement. The large photoluminescence response and the important refractive nonlinearity of the photoconductive samples seem to promise potential applications for the development of multifunctional all-optical nanodevices. - Highlights: ► Enhancement in photoluminescence for chromium doped zinc oxide films is presented. ► A strong and ultrafast optical Kerr effect seems to result from quantum confinement. ► Photoconductive properties for optical and optoelectronic functions were observed.

  20. Photoconductivity, photoluminescence and optical Kerr nonlinear effects in zinc oxide films containing chromium nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Torres-Torres, C., E-mail: crstorres@yahoo.com.mx [Seccion de Estudios de Posgrado e Investigacion, ESIME-Z, Instituto Politecnico Nacional, Mexico, DF 07738 (Mexico); Garcia-Cruz, M.L. [Centro de Investigacion en Dispositivos Semiconductores, Benemerita Universidad Autonoma de Puebla, A. P. J-48, Puebla 72570, Mexico (Mexico); Castaneda, L., E-mail: luisca@sirio.ifuap.buap.mx [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, A. P. J-48, Puebla 72570, Mexico (Mexico); Rangel Rojo, R. [CICESE/Depto. de Optica, A. P. 360, Ensenada, BC 22860 (Mexico); Tamayo-Rivera, L. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Mexico, DF 01000 (Mexico); Maldonado, A. [Depto. de Ing. Electrica, CINVESTAV IPN-SEES, A. P. 14740, Mexico DF 07000 (Mexico); Avendano-Alejo, M., E-mail: imax_aa@yahoo.com.mx [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, A. P. 70-186, 04510, DF (Mexico); and others

    2012-04-15

    Chromium doped zinc oxide thin solid films were deposited on soda-lime glass substrates. The photoconductivity of the material and its influence on the optical behavior was evaluated. A non-alkoxide sol-gel synthesis approach was used for the preparation of the samples. An enhancement of the photoluminescence response exhibited by the resulting photoconductive films with embedded chromium nanoclusters is presented. The modification in the photoconduction induced by a 445 nm wavelength was measured and then associated with the participation of the optical absorptive response. In order to investigate the third order optical nonlinearities of the samples, a standard time-resolved Optical Kerr Gate configuration with 80 fs pulses at 830 nm was used and a quasi-instantaneous pure electronic nonlinearity without the contribution of nonlinear optical absorption was observed. We estimate that from the inclusion of Cr nanoclusters into the sample results a strong optical Kerr effect originated by quantum confinement. The large photoluminescence response and the important refractive nonlinearity of the photoconductive samples seem to promise potential applications for the development of multifunctional all-optical nanodevices. - Highlights: Black-Right-Pointing-Pointer Enhancement in photoluminescence for chromium doped zinc oxide films is presented. Black-Right-Pointing-Pointer A strong and ultrafast optical Kerr effect seems to result from quantum confinement. Black-Right-Pointing-Pointer Photoconductive properties for optical and optoelectronic functions were observed.

  1. Electrical and optical properties of ultrasonically sprayed Al-doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Babu, B.J., E-mail: jbabu@cinvestav.mx [Department of Electrical Engineering-SEES, CINVESTAV-IPN, Zacatenco, D.F., C.P. 07360 (Mexico); Maldonado, A.; Velumani, S.; Asomoza, R. [Department of Electrical Engineering-SEES, CINVESTAV-IPN, Zacatenco, D.F., C.P. 07360 (Mexico)

    2010-10-25

    Aluminium-doped ZnO (AZO) films were deposited by ultrasonic spray pyrolysis (USP) technique to investigate its potential application as antireflection coating and top contact layer for copper indium gallium diselenide (CIGS) based photovoltaic cells. The solution used to prepare AZO thin films contained 0.2 M of zinc acetate and 0.2 M of aluminium pentanedionate solutions in the order of 2, 3 and 4 at.% of Al/Zn. AZO films were deposited onto glass substrates at different substrate temperatures starting from 450 deg. C to 500 deg. C. XRD and FESEM analysis revealed the structural properties of the films and almost all the films possessed crystalline structure with a preferred (0 0 2) orientation except for the 4 at.% of Al. Grain size of AZO films varied from 29.7 to 37 nm for different substrate temperatures and atomic percentage of aluminium. The average optical transmittance of all films with the variation of doping concentration and substrate temperature was 75-90% in the visible range of wavelength 600-700 nm. Optical direct band gap value of 2, 3 and 4 at.% Al-doped films sprayed at different temperatures varied from 3.32 to 3.46 eV. Hall studies were carried out to analyze resistivity, mobility and carrier concentration of the films. AZO films deposited at different substrate temperatures and at various Al/Zn ratios showed resistivity ranging from 0.12 to 1.0 x 10{sup -2} {Omega} cm. Mobility value was {approx}5 cm{sup 2}/V s and carrier concentration value was {approx}7.7 x 10{sup 19} cm{sup -3}. Minimum electrical resistivity was obtained for the 3 at.% Al-doped film sprayed at 475 deg. C and its value was 1.0 x 10{sup -2} {Omega} cm with film thickness of 602 nm. The electrical conductivity of ZnO films was improved by aluminium doping.

  2. Structural characterization of lead sulfide thin films by means of X ...

    Indian Academy of Sciences (India)

    Administrator

    This detector can operate at any temperature between 77 and 300 K (Johnson 1984). The possibility of using very thin (20–60 nm) chemically deposited PbS films as solar control coatings have been discussed by many workers. (Nair et al 1989). Analyses of the mechanism of photo- conductivity in PbS thin films are also ...

  3. Optoelectronic properties of cadmium sulfide thin films deposited by thermal evaporation technique

    International Nuclear Information System (INIS)

    Ali, N.; Iqbal, M.A.; Hussain, S.T.; Waris, M.; Munair, S.A.

    2011-01-01

    The substrate temperature in depositions of thin films plays a vital role in the characteristics of deposited films. We studied few characteristics of cadmium sulphide thin film deposited at different temperature (150 deg. C- 300 deg. C) on corning 7059 glass substrate. We measured transmittance, absorbance, band gap and reflectance via UV spectroscopy. It was found that the transmittance for 300 nm to 1100 nm was greater than 80%. The resistivity and mobility was calculated by Vander Pauw method which were 10-80 cm and 2-60 cm/sup 2/V/sup -1/S/sup -1/ respectively. The thermoelectric properties of the film were measured by hot and cold probe method which shows the N-type nature of the film. (author)

  4. Properties of Al- and Ga-doped thin zinc oxide films treated with UV laser radiation

    Science.gov (United States)

    Al-Asedy, Hayder J.; Al-Khafaji, Shuruq A.; Bakhtiar, Hazri; Bidin, Noriah

    2018-03-01

    This paper reports the Nd:YAG laser irradiation treated modified properties of aluminum (Al) and gallium (Ga) co-doped zinc oxide (ZnO) (AGZO) films prepared on Si-substrate via combined sol-gel and spin-coating method. The impact of varying laser energy (150-200 mJ) on the structure, morphology, electrical and optical properties of such AGZO films were determined. Laser-treated samples were characterized using various analytical tools. Present techniques could achieve a high-quality polycrystalline films compared with those produced via conventional high temperature processing. AGZO films irradiated with third harmonics UV radiation (355 nm) from Nd:YAG laser source revealed very low resistivity of 4.02 × 10- 3 Ω cm. The structural properties grain size was calculated firm the X-ray diffraction spectra using the Scherrer equation that increased from 12.7 to 22.5 nm as the annealing laser energy increased from (150-200) mJ. The differences in crystallinity and orientation are explained in terms of the thermal effect caused by laser irradiation. (FESEM) images have been demonstrated that Nd:YAG laser annealing can significantly improve the crystallinity level, densification, and surface flatness of sol-gel derived AGZO thin films that occurred as a result of laser processing. Synthesized AGZO films displayed favorable growth orientation along (101) lattice direction. AGZO films with energy band gap of 3.37-3.41 eV were obtained. Results on the crystallinity, surface morphology, roughness, bonding vibration, absorption, photoluminescence, and resistivity of the laser-irradiated films were analyzed and discussed.

  5. Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

    International Nuclear Information System (INIS)

    Hanna, A. N.; Ghoneim, M. T.; Bahabry, R. R.; Hussain, A. M.; Hussain, M. M.

    2013-01-01

    We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions

  6. Structural and Optical Studies of Magnesium Doped Zinc Oxide Thin Films

    OpenAIRE

    Arpana Agrawal; Tanveer Ahmad Dar; Pratima Sen

    2013-01-01

    The paper describes the structural and optical properties of Magnesium doped Zinc Oxide (Mg  3.5 %, 6 %, 9 %, 12 % by weight) thin films prepared by pulsed laser deposition technique. The samples are characterized by X-ray diffraction technique, Ultra-violet visible absorption spectroscopy, X-ray photoelectron spectroscopy. X-ray diffraction results reveal the polycrystalline nature of samples with no impurity or secondary phase formation. Ultra-violet visible absorption spectroscopy studies...

  7. Fabrication and RF characterization of zinc oxide based Film Bulk Acoustic Resonator

    Science.gov (United States)

    Patel, Raju; Bansal, Deepak; Agrawal, Vimal Kumar; Rangra, Kamaljit; Boolchandani, Dharmendar

    2018-06-01

    This work reports fabrication and characterization of Film Bulk Acoustic Resonator (FBAR) to improve the performance characteristics for RF filter and sensing application. Zinc oxide as a piezoelectric (PZE) material was deposited on an aluminum bottom electrode using an RF magnetron sputtering, at room temperature, and gold as top electrode for the resonator. Tetramethyl ammonium hydroxide (TMAH) setup was used for bulk silicon etching to make back side cavity to confine the acoustic signals. The transmission characteristics show that the FBARs have a central frequency at 1.77 GHz with a return loss of -10.7 dB.

  8. Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

    KAUST Repository

    Hanna, Amir; Ghoneim, Mohamed T.; Bahabry, Rabab R.; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2013-01-01

    We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.

  9. Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

    KAUST Repository

    Hanna, Amir

    2013-11-26

    We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.

  10. The Geometry-Induced Superhydrophobic Property of Carpet-like Zinc Films

    International Nuclear Information System (INIS)

    Liang Li-Xing; Deng Yuan; Wang Yao

    2013-01-01

    Carpet-like zinc films with unique nanowires are fabricated by using a simple physical evaporation method. The definite morphologies of the films endow the superhydrophobic material with a contact angle of about 157.9°, and by additional modification of CF 3 (CF 2 ) 7 CH 2 CH 2 Si(OCH 3 ) 3 the water adhesive force could be tuned from 58.3 μN to 14.6 μN. In order to analyze the controllable adhesion of superhydrophobic Zn films, we study the microstructure and chemical compositions of the films by x-ray diffraction SEM, TEM, HRTEM and EDAX. Furthermore, a model based on the balance of micro-surface energy is proposed to illustrate the relationship of the geometry and wettability properties of the films. The model provides new insights into how to design-oriented microchannels and micro-protuberance on material surfaces, which is of benefit for controlling their ability of caught-collection in air bubbles and water-pinning collection

  11. Synthesis and physical properties of zinc-oxide textured films by using a filtered preheated hydrothermal

    International Nuclear Information System (INIS)

    Qiu, Jijun; Shin, Dongmyeong; He, Weizhen; Kim, Hyungkook; Hwang, Yoonhwae; Li, Xiaomin; Gao, Xiangdong

    2014-01-01

    Axially (c-axis)-oriented ZnO thick films with a ∼8.1 μm thickness were fabricated on ZnO seed layer coated substrates by using a filtered preheated hydrothermal solution. The thick films composed of single-crystal ZnO microrods with various diameters were formed by coalescing each nanorod together along their side surfaces. From the X-ray diffraction result a biaxial stress exists was found to exist in the as-grown thick films, and the stress gradually increased with increasing annealing temperatures from 200 to 550 .deg. C due to a degradation in the crystalline quality. The biaxial stress is responsible for the red-shift of the optical band gap of the ZnO thick films. Photoluminescence and Hall results revealed that the optical and the electrical properties of the thick films were degenerated after high-temperature annealing (> 200 .deg. C), which was due to the introduction of point defects, such as oxygen interstitials and zinc vacancies.

  12. Synthesis and physical properties of zinc-oxide textured films by using a filtered preheated hydrothermal

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Jijun [Pusan National University, Busan (Korea, Republic of); Shin, Dongmyeong; He, Weizhen; Kim, Hyungkook; Hwang, Yoonhwae [Pusan National University, Miryang (Korea, Republic of); Li, Xiaomin; Gao, Xiangdong [Chinese Academy of Sciences, Shanghai (China)

    2014-11-15

    Axially (c-axis)-oriented ZnO thick films with a ∼8.1 μm thickness were fabricated on ZnO seed layer coated substrates by using a filtered preheated hydrothermal solution. The thick films composed of single-crystal ZnO microrods with various diameters were formed by coalescing each nanorod together along their side surfaces. From the X-ray diffraction result a biaxial stress exists was found to exist in the as-grown thick films, and the stress gradually increased with increasing annealing temperatures from 200 to 550 .deg. C due to a degradation in the crystalline quality. The biaxial stress is responsible for the red-shift of the optical band gap of the ZnO thick films. Photoluminescence and Hall results revealed that the optical and the electrical properties of the thick films were degenerated after high-temperature annealing (> 200 .deg. C), which was due to the introduction of point defects, such as oxygen interstitials and zinc vacancies.

  13. Tunable zinc interstitial related defects in ZnMgO and ZnCdO films

    International Nuclear Information System (INIS)

    Li, Wanjun; Qin, Guoping; Fang, Liang; Ye, Lijuan; Wu, Fang; Ruan, Haibo; Zhang, Hong; Kong, Chunyang; Zhang, Ping

    2015-01-01

    We report tunable band gap of ZnO thin films grown on quartz substrates by radio frequency magnetron sputtering. The zinc interstitial (Zn i ) defects in ZnO films were investigated by X-ray diffraction, Raman scattering, Auger spectra, first-principle calculations, and Hall measurement. Undoped ZnO film exhibits an anomalous Raman mode at 275 cm −1 . We first report that 275 cm −1 mode also can be observed in ZnO films alloyed with Mg and Cd, whose Raman intensities, interestingly, decrease and increase with increasing Mg and Cd alloying content, respectively. Combined with the previous investigations, it is deduced that 275 cm −1 mode is attributed to Zn i related defects, which is demonstrated by our further experiment and theoretical calculation. Consequently, the concentration of Zn i related defects in ZnO can be tuned by alloying Mg and Cd impurity, which gives rise to different conductivity in ZnO films. These investigations help to further understand the controversial origin of the additional Raman mode at 275 cm −1 and also the natural n-type conductivity in ZnO

  14. Tunable zinc interstitial related defects in ZnMgO and ZnCdO films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Wanjun; Qin, Guoping [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing 401331 (China); Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, Chongqing 401331 (China); Fang, Liang, E-mail: lfang@cqu.edu.cn, E-mail: kchy@163.com; Ye, Lijuan; Wu, Fang [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing 401331 (China); Ruan, Haibo [Research Center for Materials Interdisciplinary Sciences, Chongqing University of Arts and Sciences, Chongqing 402160 (China); Zhang, Hong; Kong, Chunyang, E-mail: lfang@cqu.edu.cn, E-mail: kchy@163.com; Zhang, Ping [Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, Chongqing 401331 (China)

    2015-04-14

    We report tunable band gap of ZnO thin films grown on quartz substrates by radio frequency magnetron sputtering. The zinc interstitial (Zn{sub i}) defects in ZnO films were investigated by X-ray diffraction, Raman scattering, Auger spectra, first-principle calculations, and Hall measurement. Undoped ZnO film exhibits an anomalous Raman mode at 275 cm{sup −1}. We first report that 275 cm{sup −1} mode also can be observed in ZnO films alloyed with Mg and Cd, whose Raman intensities, interestingly, decrease and increase with increasing Mg and Cd alloying content, respectively. Combined with the previous investigations, it is deduced that 275 cm{sup −1} mode is attributed to Zn{sub i} related defects, which is demonstrated by our further experiment and theoretical calculation. Consequently, the concentration of Zn{sub i} related defects in ZnO can be tuned by alloying Mg and Cd impurity, which gives rise to different conductivity in ZnO films. These investigations help to further understand the controversial origin of the additional Raman mode at 275 cm{sup −1} and also the natural n-type conductivity in ZnO.

  15. Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species

    Science.gov (United States)

    Teeter, Glenn; Du, Hui; Young, Matthew

    2013-08-06

    A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

  16. Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

    International Nuclear Information System (INIS)

    Liu, P.; Chen, T.P.; Liu, Z.; Tan, C.S.; Leong, K.C.

    2013-01-01

    Evolution of electrical properties and thin-film transistor characteristics of amorphous indium gallium zinc oxide (IGZO) thin films synthesized by RF sputtering with O 2 plasma immersion has been examined. O 2 plasma immersion results in an enhancement in the Hall mobility and a decrease in the electron concentration; and the transistor performance can be greatly improved by the O 2 plasma immersion. X-ray photoelectron spectroscopy analysis indicates that the effect of O 2 plasma immersion on the electrical properties and the transistor performance can be attributed to the reduction of the oxygen-related defects in the IGZO thin films. - Highlights: • Oxygen plasma immersion effect on indium gallium zinc oxide thin film properties • Oxygen-related defect reduces in the InGaZnO thin film with oxygen plasma immersion. • Increasing oxygen plasma immersion duration on device will decrease the off current. • Oxygen plasma immersion enhances the performance of device

  17. Structural, optical and electrical properties of copper antimony sulfide thin films grown by a citrate-assisted single chemical bath deposition

    Science.gov (United States)

    Loranca-Ramos, F. E.; Diliegros-Godines, C. J.; Silva González, R.; Pal, Mou

    2018-01-01

    Copper antimony sulfide (CAS) has been proposed as low toxicity and earth abundant absorber materials for thin film photovoltaics due to their suitable optical band gap, high absorption coefficient and p-type electrical conductivity. The present work reports the formation of copper antimony sulfide by chemical bath deposition using sodium citrate as a complexing agent. We show that by tuning the annealing condition, one can obtain either chalcostibite or tetrahedrite phase. However, the main challenge was co-deposition of copper and antimony as ternary sulfides from a single chemical bath due to the distinct chemical behavior of these metals. The as-deposited films were subjected to several trials of thermal treatment using different temperatures and time to find the optimized annealing condition. The films were characterized by different techniques including Raman spectroscopy, X-ray diffraction (XRD), profilometer, scanning electron microscopy (SEM), UV-vis spectrophotometer, and Hall Effect measurements. The results show that the formation of chalcostibite and tetrahedrite phases is highly sensitive to annealing conditions. The electrical properties obtained for the chalcostibite films varied as the annealing temperature increases from 280 to 350 °C: hole concentration (n) = 1017-1018 cm-3, resistivity (ρ) = 1.74-2.14 Ωcm and carrier mobility (μ) = 4.7-9.26 cm2/Vseg. While for the tetrahedrite films, the electrical properties were n = 5 × 1019 cm-3, μ = 18.24 cm2/Vseg, and ρ = 5.8 × 10-3 Ωcm. A possible mechanism for the formation of ternary copper antimony sulfide has also been proposed.

  18. Power Generation by Zinc Antimonide Thin Film under Various Load Resistances at its Critical Operating Temperature

    DEFF Research Database (Denmark)

    Mir Hosseini, Seyed Mojtaba; Rezaniakolaei, Alireza; Rosendahl, Lasse Aistrup

    slightly reduces during unload conditions, although it is expected that by eliminating load in each step, the initial amount of voltage exactly repeats. Similar behavior is observed for Seebeck coefficient distribution versus time of working particularly in lower load resistances. Based on variation...... thin films operating under different load resistances at around its critical operating temperature, 400 ᵒC. The thermoelement is subjected to constant hot side temperature and to room temperature at the cold junction in order to measure the thin film TEG’s sample performance. The nominal loads equal...... to 10, 15, 20, 25, 30, 35, 40, 45… 175, and also 200 Ohms were applied. The results show that the value of the Seebeck coefficient is 0.0002 [V/K] for the specimen, which is in agreement with quantities of other zinc antimonide bulks materials in literature. The results also show that the voltage...

  19. Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

    Science.gov (United States)

    Jin, Sung Hun; Kang, Seung-Kyun; Cho, In-Tak; Han, Sang Youn; Chung, Ha Uk; Lee, Dong Joon; Shin, Jongmin; Baek, Geun Woo; Kim, Tae-il; Lee, Jong-Ho; Rogers, John A

    2015-04-22

    This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

  20. Zinc Vacancy-Induced Room-Temperature Ferromagnetism in Undoped ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    Hongtao Ren

    2012-01-01

    Full Text Available Undoped ZnO thin films are prepared by polymer-assisted deposition (PAD and treated by postannealing at different temperatures in oxygen or forming gases (95%  Ar+5% H2. All the samples exhibit ferromagnetism at room temperature (RT. SQUID and positron annihilation measurements show that post-annealing treatments greatly enhance the magnetizations in undoped ZnO samples, and there is a positive correlation between the magnetization and zinc vacancies in the ZnO thin films. XPS measurements indicate that annealing also induces oxygen vacancies that have no direct relationship with ferromagnetism. Further analysis of the results suggests that the ferromagnetism in undoped ZnO is induced by Zn vacancies.

  1. Non-toxic and environmentally friendly route for preparation of copper indium sulfide based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sankir, Nurdan Demirci, E-mail: nsankir@etu.edu.tr; Aydin, Erkan; Ugur, Esma; Sankir, Mehmet

    2015-08-15

    Highlights: • Substrate structure of spray pyrolyzed CuInS{sub 2}/In{sub 2}S{sub 3} heterojunction solar cells. • Low cost and environmentally friendly fabrication of CuInS{sub 2} based solar cells. • Low RF power deposition of TCO layer. • AZO–Ag–AZO sandwich structure. • Effect of the thickness of buffer layer on the photovoltaic performance. - Abstract: In this study, copper based thin film solar cells with substrate structure have been built via spray pyrolysis method. Toxic material usage was avoided during the material deposition and the post-treatment steps. Novel device configuration of Mo/CuInS{sub 2}/In{sub 2}S{sub 3}/ZnO/AZO–Ag–AZO was studied as a function of the In{sub 2}S{sub 3} buffer layer thickness. In order to utilize the zinc oxide (ZnO) and aluminum doped zinc oxide (AZO) transparent conductive layers, deposited by physical vapor deposition (PVD), on top of the spray pyrolyzed thin films, the RF power was lowered to 30 W. Although this minimized the unwanted penetration of the highly energetic particles, created during PVD process, sheet resistivity of the AZO films increased enormously. Hence very thin silver layer has been deposited between two AZO films. This resulted the decrease in the sheet resistivity more than 10{sup 6} times. Electrical measurements under illumination revealed that short circuit current density (J{sub sc}), open circuit voltage (V{sub oc}), fill factor (FF) and efficiency (η) of the Mo/CuInS{sub 2}/In{sub 2}S{sub 3}/ZnO/AZO–Ag–AZO type solar cells increased with increasing the thickness of the In{sub 2}S{sub 3} layer. The maximum J{sub sc} of 9.20 mA/cm{sup 2}, V{sub oc} of 0.43 V, FF of 0.44 have been observed for the 0.94 μm-thick In{sub 2}S{sub 3} layer. Extraordinarily thick buffer layer provided better diffusion barrier between the absorber and the TCO layers and also resulted better photosensitivity. These could be the key factors to produce substrate configuration of the spray pyrolyzed

  2. Growth analysis of cadmium sulfide thin films by atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H.R.; Dhere, R.G.; Ramanathan, K. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    CdS films have been deposited by solution growth on SnO{sub 2} and glass substrates. Nucleation on SnO{sub 2} occurs at early deposition times, and complete conformal coverage is observed at low thickness values. The average grain size of the CdS films is established at these early times. In films deposited on glass substrates, nucleation is slower and occurs through 3-dimensional islands that increase in size and number as deposition proceeds. Optical measurements show that the bandgap values of CdS films deposited on SnO{sub 2} depend mainly on substrate structure. Hydrogen heat treatment does not affect the surface morphology of the samples, but decreases bandgap values.

  3. Surface plasmon resonance based fiber optic detection of chlorine utilizing polyvinylpyrolidone supported zinc oxide thin films.

    Science.gov (United States)

    Tabassum, Rana; Gupta, Banshi D

    2015-03-21

    A highly sensitive chlorine sensor for an aqueous medium is fabricated using an optical fiber surface plasmon resonance (OFSPR) system. An OFSPR-based chlorine sensor is designed with a multilayer-type platform by zinc oxide (ZnO) and polyvinylpyrollidone (PVP) film morphology manipulations. Among all the methodologies of transduction reported in the field of solid state chemical and biochemical sensing, our attention is focused on the Kretschmann configuration optical fiber sensing technique using the mechanism of surface plasmon resonance. The optical fiber surface plasmon resonance (SPR) chlorine sensor is developed using a multimode optical fiber with the PVP-supported ZnO film deposited over a silver-coated unclad core of the fiber. A spectral interrogation mode of operation is used to characterize the sensor. In an Ag/ZnO/PVP multilayer system, the absorption of chlorine in the vicinity of the sensing region is performed by the PVP layer and the zinc oxide layer enhances the shift in resonance wavelength. It is, experimentally, demonstrated that the SPR wavelength shifts nonlinearly towards the red side of the visible region with an increase in the chlorine concentration in an aqueous medium while the sensitivity of the sensor decreases linearly with an increase in the chlorine concentration. As the proposed sensor utilizes an optical fiber, it possesses the additional advantages of fiber such as less signal degradation, less susceptibility to electromagnetic interference, possibility of remote sensing, probe miniaturization, probe re-usability, online monitoring, small size, light weight and low cost.

  4. Optical and electrical properties of zinc oxide thin films with low resistivity via Li-N dual-acceptor doping

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Daoli, E-mail: zhang_daoli@mail.hust.edu.cn [Department of Electronic Science and Technology, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Wuhan National Laboratory for Optoelectronics, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Zhang Jianbing [Department of Electronic Science and Technology, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Wuhan National Laboratory for Optoelectronics, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Guo Zhe [Department of Electronic Science and Technology, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Miao Xiangshui [Department of Electronic Science and Technology, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China); Wuhan National Laboratory for Optoelectronics, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074 (China)

    2011-05-19

    Highlights: > Zinc oxide films have been deposited on glass substrates by Li-N dual-acceptor doping method via a modified SILAR method. > The resistivity of ZnO film was found to be 1.04 {Omega} cm with a Hall mobility of 0.749 cm{sup 2} V{sup -1} s{sup -1}, carrier concentration of 8.02 x 1018 cm{sup -3}, and transmittance of about 80% in visible range showing good crystallinity with prior c-axis orientation. > A shallow acceptor level of 91 meV is identified from free-to-neutral-acceptor transitions. > Another deep level of 255 meV was ascribed to Li{sub Zn}-Li{sub i} complex. - Abstract: Zinc oxide thin films with low resistivity have been deposited on glass substrates by Li-N dual-acceptor doping method via a modified successive ionic layer adsorption and reaction process. The thin films were systematically characterized via scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction, ultraviolet-visible spectrophotometry and fluorescence spectrophotometry. The resistivity of zinc oxide film was found to be 1.04 {Omega} cm with a Hall mobility of 0.749 cm{sup 2} V{sup -1} s{sup -1} and carrier concentration of 8.02 x 10{sup 18} cm{sup -3}. The Li-N dual-acceptor doped zinc oxide films showed good crystallinity with prior c-axis orientation, and high transmittance of about 80% in visible range. Moreover, the effects of Li doping level and other parameters on crystallinity, electrical and ultraviolet emission of zinc oxide films were investigated.

  5. Transparent conductive zinc-oxide-based films grown at low temperature by mist chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shirahata, Takahiro [New Energy and Environmental Business Division, Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kobe International Business Center (KIBC) 509, 5-5-2 Minatojima-Minami, Chuo-Ku, Kobe 650-0047 (Japan); Kawaharamura, Toshiyuki [Research Institute, Kochi University of Technology, Kami, Kochi 780-8502 (Japan); School of Systems Engineering, Kochi University of Technology, Kami, Kochi 780-8502 (Japan); Fujita, Shizuo, E-mail: fujitasz@kuee.kyoto-u.ac.jp [Photonics and Electronics Science and Engineering Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520 (Japan); Orita, Hiroyuki [New Energy and Environmental Business Division, Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kobe International Business Center (KIBC) 509, 5-5-2 Minatojima-Minami, Chuo-Ku, Kobe 650-0047 (Japan)

    2015-12-31

    Atmospheric pressure mist chemical vapor deposition (Mist–CVD) systems have been developed to grow zinc-oxide-based (ZnO-based) transparent conductive oxide (TCO) films. Low-resistive aluminum-doped ZnO (AZO) TCOs, showing resistivity of the order on 10{sup −4} Ωcm, previously were grown using a safe source material zinc acetate [Zn(ac){sub 2}], at a growth temperature as high as 500 °C. To grow superior TCOs at lower temperatures, we proposed the addition of NH{sub 3} to accelerate the reaction of acetylacetonate compounds. As the result, we could grow gallium-doped ZnO (GZO) TCOs with a resistivity of 2.7 × 10{sup −3} Ω cm and transmittance higher than 90% at 300 °C by using zinc acetylacetonate [Zn(acac){sub 2}] as the Zn source. To grow boron-doped ZnO (BZO) TCOs at a lower growth temperature of 200 °C, we used boron doping along with a toluene solution of diethylzinc (DEZ), that maintained high reactivity without being flammable. These BZO TCOs showed a resistivity of 1.5 × 10{sup −3} Ω cm and transmittance higher than 90%, despite the use of a non-vacuum-based open-air technology. - Highlights: • Introduction of Mist–CVD as a non-vacuum-based, safe, and cost-effective growth technology • Process evolution of the growth technology to lower the growth temperature. • Achievement of low resistive ZnO films at 200oC.

  6. Transparent conductive zinc-oxide-based films grown at low temperature by mist chemical vapor deposition

    International Nuclear Information System (INIS)

    Shirahata, Takahiro; Kawaharamura, Toshiyuki; Fujita, Shizuo; Orita, Hiroyuki

    2015-01-01

    Atmospheric pressure mist chemical vapor deposition (Mist–CVD) systems have been developed to grow zinc-oxide-based (ZnO-based) transparent conductive oxide (TCO) films. Low-resistive aluminum-doped ZnO (AZO) TCOs, showing resistivity of the order on 10"−"4 Ωcm, previously were grown using a safe source material zinc acetate [Zn(ac)_2], at a growth temperature as high as 500 °C. To grow superior TCOs at lower temperatures, we proposed the addition of NH_3 to accelerate the reaction of acetylacetonate compounds. As the result, we could grow gallium-doped ZnO (GZO) TCOs with a resistivity of 2.7 × 10"−"3 Ω cm and transmittance higher than 90% at 300 °C by using zinc acetylacetonate [Zn(acac)_2] as the Zn source. To grow boron-doped ZnO (BZO) TCOs at a lower growth temperature of 200 °C, we used boron doping along with a toluene solution of diethylzinc (DEZ), that maintained high reactivity without being flammable. These BZO TCOs showed a resistivity of 1.5 × 10"−"3 Ω cm and transmittance higher than 90%, despite the use of a non-vacuum-based open-air technology. - Highlights: • Introduction of Mist–CVD as a non-vacuum-based, safe, and cost-effective growth technology • Process evolution of the growth technology to lower the growth temperature. • Achievement of low resistive ZnO films at 200oC.

  7. Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111 Si Substrate: The Effect of Film Thickness

    Directory of Open Access Journals (Sweden)

    Cheng-Chang Yu

    2014-01-01

    Full Text Available Indium-nitrogen codoped zinc oxide (INZO thin films were fabricated by spray pyrolysis deposition technique on n-(111 Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM and X-ray diffraction (XRD. The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002 to (101 as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1 and hole concentration around 3×1019 cm−3 can be achieved with film thickness less than 385 nm. The n-type conduction with concentration 1×1020 cm−3 is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film.

  8. Defect induced modification of structural, topographical and magnetic properties of zinc ferrite thin films by swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Raghavan, Lisha [Department of Physics, Cochin University of Science and Technology, Cochin 682022 (India); Inter University Accelerator Center, New Delhi 110067 (India); Joy, P.A. [National Chemical Laboratory, Pune (India); Vijaykumar, B. Varma; Ramanujan, R.V. [School of Materials Science and Engineering, Nanyang Technological University (Singapore); Anantharaman, M.R., E-mail: mraiyer@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022 (India)

    2017-04-01

    Highlights: • Zinc ferrite films exhibited room temperature ferrimagnetic property. • On ion irradiation amorphisation of films were observed. • The surface morphology undergoes changes with ion irradiation. • The saturation magnetisation decreases on ion irradiation. - Abstract: Swift heavy ion irradiation provides unique ways to modify physical and chemical properties of materials. In ferrites, the magnetic properties can change significantly as a result of swift heavy ion irradiation. Zinc ferrite is an antiferromagnet with a Neel temperature of 10 K and exhibits anomalous magnetic properties in the nano regime. Ion irradiation can cause amorphisation of zinc ferrite thin films; thus the role of crystallinity on magnetic properties can be examined. The influence of surface topography in these thin films can also be studied. Zinc ferrite thin films, of thickness 320 nm, prepared by RF sputtering were irradiated with 100 MeV Ag ions. Structural characterization showed amorphisation and subsequent reduction in particle size. The change in magnetic properties due to irradiation was correlated with structural and topographical effects of ion irradiation. A rough estimation of ion track radius is done from the magnetic studies.

  9. Electrosprayed Metal Oxide Semiconductor Films for Sensitive and Selective Detection of Hydrogen Sulfide

    Directory of Open Access Journals (Sweden)

    Maryam Siadat

    2009-11-01

    Full Text Available Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO2, tungsten oxide (WO3 and indium oxide (In2O3 were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD. The morphology studied with scanning electron microscopy (SEM and atomic force microscopy (AFM shows porous homogeneous films comprising uniformly distributed aggregates of nano particles. The X-ray diffraction technique (XRD proves the formation of crystalline phases with no impurities. Besides, the Raman cartographies provided information about the structural homogeneity. Some of the films are highly sensitive to low concentrations of H2S (10 ppm at low operating temperatures (100 and 200 °C and the best response in terms of Rair/Rgas is given by Cu-SnO2 films (2500 followed by WO3 (1200 and In2O3 (75. Moreover, all the films exhibit no cross-sensitivity to other reducing (SO2 or oxidizing (NO2 gases.

  10. The influence of energetic bombardment on the structure formation of sputtered zinc oxide films. Development of an atomistic growth model and its application to tailor thin film properties

    Energy Technology Data Exchange (ETDEWEB)

    Koehl, Dominik

    2011-02-17

    The focus of this work is the investigation of the growth of zinc oxide (ZnO) thin films. It is demonstrated that with a modified, ion beam assisted sputtering (IBAS) process, zinc oxide films can be deposited which exhibit a markedly improved crystalline order. Furthermore, it is demonstrated that intense energetic oxygen ion bombardment can be utilized to change film texture from the typical (002)-self-texture to an a-axis texture where the (002)-planes are perpendicular to the substrate surface. An understanding of the underlying mechanisms is developed which also facilitates a more detailed understanding of the action of ion bombardment during zinc oxide film growth. It is shown that zinc oxide films are susceptible to the influence of ion bombardment particularly in the nucleation regime of growth and that this finding is generally true for all observed structural changes induced by ion bombardment with various species, energies and flux densities. It is demonstrated not only that the initial growth stage plays an important role in the formation of a preferred growth orientation but also that the action of texture forming mechanisms in subsequent growth stages is comparatively weak. (orig.)

  11. The influence of energetic bombardment on the structure formation of sputtered zinc oxide films. Development of an atomistic growth model and its application to tailor thin film properties

    International Nuclear Information System (INIS)

    Koehl, Dominik

    2011-01-01

    The focus of this work is the investigation of the growth of zinc oxide (ZnO) thin films. It is demonstrated that with a modified, ion beam assisted sputtering (IBAS) process, zinc oxide films can be deposited which exhibit a markedly improved crystalline order. Furthermore, it is demonstrated that intense energetic oxygen ion bombardment can be utilized to change film texture from the typical (002)-self-texture to an a-axis texture where the (002)-planes are perpendicular to the substrate surface. An understanding of the underlying mechanisms is developed which also facilitates a more detailed understanding of the action of ion bombardment during zinc oxide film growth. It is shown that zinc oxide films are susceptible to the influence of ion bombardment particularly in the nucleation regime of growth and that this finding is generally true for all observed structural changes induced by ion bombardment with various species, energies and flux densities. It is demonstrated not only that the initial growth stage plays an important role in the formation of a preferred growth orientation but also that the action of texture forming mechanisms in subsequent growth stages is comparatively weak. (orig.)

  12. In vitro studies of osteoblasts response onto zinc aluminate ceramic films

    Directory of Open Access Journals (Sweden)

    Marco Antonio Alvarez-Pérez

    2009-01-01

    Full Text Available Zinc based or doped ceramics have shown to be capable of increasing osteoblasts proliferation, biomineralization and bone formation. However, studies regarding the biological applications processes in ZnAl2O4 ceramic films are very scarce. For this reason, the objective of this in vitro study was to investigate the response of osteoblasts cells cultured onto ZnAl2O4 films. Our results showed a good biological response related to attachment and viability, with good cell morphology attached to the semi-spherical grains of the ceramic and the analysis of mineral-like tissue showed a high quantity of mineral deposited and organized as tiny spherical-like nodules attached to nanostructure surface of ZnAl2O4 material films. Based in our results, ZnAl2O4 films stimulated the bioactivity of osteoblasts cells and provide a microenvironment that favors cell differentiation and mineralization processes, suggesting their potential use as osteoconductive coating onto currently orthopedic and dental implants.

  13. Copper tin sulfide (CTS) absorber thin films obtained by co-evaporation: Influence of the ratio Cu/Sn

    Energy Technology Data Exchange (ETDEWEB)

    Robles, V., E-mail: victor.robles@ciemat.es; Trigo, J.F.; Guillén, C.; Herrero, J.

    2015-09-05

    Highlights: • Copper tin sulfide (CTS) thin films were grown by co-evaporation at different Cu/Sn atomic ratios. • Smooth Cu{sub 2}SnS{sub 3} layers with large grains are obtained at Cu/Sn ⩾ 1.5 and T ⩾ 350 °C. • At 450 °C, the cubic Cu{sub 2}SnS{sub 3} phase changes to tetragonal phase. • Cu{sub 2}SnS{sub 3} presents suitable optical and electrical properties for use as photovoltaic absorbers. - Abstract: Copper tin sulfide thin films have been grown on soda-lime glass substrates from the elemental constituents by co-evaporation. The synthesis was performed at substrate temperatures of 350 °C and 450 °C and different Cu/Sn ratios, adjusting the deposition time in order to obtain thicknesses above 1000 nm. The evolution of the morphological, structural, chemical, optical and electrical properties has been analyzed as a function of the substrate temperature and the Cu/Sn ratio. For the samples with Cu/Sn ⩽ 1, Cu{sub 2}Sn{sub 3}S{sub 7} and Cu{sub 2}SnS{sub 3} have been observed by XRD. Increasing the Cu/Sn to 1.5, the Cu{sub 2}SnS{sub 3} phase was the majority, being the formation completed at Cu/Sn ratio around 2. The increment of the substrate temperature leads to a change of cubic structure to tetragonal of the Cu{sub 2}SnS{sub 3} phase. The chemical treatment with KCN was effective to eliminate CuS excess detected in the samples with Cu/Sn > 2.2. The samples with Cu{sub 2}SnS{sub 3} structure show a band gap energy increasing from 0.9 to 1.25 eV and an electrical resistivity decreasing from 7 ∗ 10{sup −2} Ω cm to 3 ∗ 10{sup −3} Ω cm when the Cu/Sn atomic ratio increases from 1.5 to 2.2.

  14. Highly flexible transparent thin film heaters based on silver nanowires and aluminum zinc oxides

    Energy Technology Data Exchange (ETDEWEB)

    Cheong, Hahn-Gil; Kim, Jin-Hoon; Song, Jun-Hyuk; Jeong, Unyong; Park, Jin-Woo, E-mail: jwpark09@yonsei.ac.kr

    2015-08-31

    In this work, we developed highly flexible transparent film heaters (f-TFHs) composed of Ag nanowire networks (AgNWs) and aluminum zinc oxide (AZO). Uniform AgNWs were roll-to-roll coated on polyethylene terephthalate (PET) substrates using the Mayer rod method, and AZO was sputter-deposited atop the AgNWs at room temperature. The sheet resistance (R{sub s}) and transparency (T{sub opt}) of the AZO-coated AgNWs changed only slightly compared with the uncoated AgNWs. AZO is thermally less conductive than the heat pipes, but increases the thermal efficiency of the heaters blocking the heat convection through the air. Based on Joule heating, a higher average film temperature (T{sub ave}) is attained at a fixed electric potential drop between electrodes (ϕ) as the R{sub s} of the film decreases. Our experimental results revealed that T{sub ave} of the hybrid f-TFH is higher than AgNWs when the ratio of the area coverage of AgNWs to AZO is over a certain value. When a ϕ as low as 3 V/cm was applied to 5 cm × 5 cm f-TFHs, the maximum temperature of the hybrid film was over 100 °C, which is greater than that of AgNWs by more than 30 °C. Furthermore, uniform heating throughout the surfaces is achieved in the hybrid films while heating begins in small areas where densities of the nanowires (NWs) are the highest in the bare network. The non-uniform heating decreases the lifetime of f-TFHs by forming hot spots. Cyclic bending test results indicated that the hybrid films were as flexible as the AgNWs, and the R{sub s} of the hybrid films changes only slightly until 5000 cycles. Combined with the high-throughput coating technology presented here, the hybrid films will provide a robust and scalable strategy for large-area f-TFHs with highly enhanced performance. - Highlights: • We developed highly efficient flexible thin film heaters based on Ag nanowires and AZO composites. • In the composite, AZO plays an important role as an insulation blanket to block heat loss to

  15. Zinc-doping enhanced cadmium sulfide electrochemiluminescence behavior based on Au-Cu alloy nanocrystals quenching for insulin detection.

    Science.gov (United States)

    Zhu, Wenjuan; Wang, Chao; Li, Xiaojian; Khan, Malik Saddam; Sun, Xu; Ma, Hongmin; Fan, Dawei; Wei, Qin

    2017-11-15

    Novel and sensitive sandwich-type electrochemiluminescence (ECL) immunosensor was fabricated for insulin detection. Au-ZnCd 14 S combined nitrogen doping mesoporous carbons (Au-ZnCd 14 S/NH 2 -NMCs) acted as sensing platform and Au-Cu alloy nanocrystals were employed as labels to quench the ECL of Au-ZnCd 14 S/NH 2 -NMCs. Zinc-doping promoted the ECL behavior of CdS nanocrystals, with the best ECL emission obtained when the molar ratio of Zn/Cd was 1:14. Simultaneously, the modification of gold nanoparticles (Au NPs) and combination with NH 2 -NMC further enhanced the ECL emission of ZnCd 14 S due to its excellent conductivity and large specific surface area, which is desirable for the immunosensor construction. Au-Cu alloy nanocrystals were employed in the ECL system of ZnCd 14 S/K 2 S 2 O 8 triggering ECL quenching effects. The ECL spectra of ZnCd 14 S, acting as the energy donor, exhibited well overlaps with the absorption band of Au-Cu alloy nanocrystals which acted as the energy acceptor, leading to an effective ECL resonance energy transfer (ECL-RET). On the basis of the ECL quenching effects, a sensitive ECL immunosensor for insulin detection was successfully constructed with a linear response range of insulin concentration from 0.1pg/mL to 30ng/mL and the limit of detection was calculated to be 0.03pg/mL (S/N = 3). Copyright © 2017 Elsevier B.V. All rights reserved.

  16. Hydrogen sulfide regulates the levels of key metabolites and antioxidant defense system to counteract oxidative stress in pepper (Capsicum annuum L.) plants exposed to high zinc regime.

    Science.gov (United States)

    Kaya, Cengiz; Ashraf, Muhammad; Akram, Nudrat Aisha

    2018-02-21

    In the present experiment, we aimed to test the impact of hydrogen sulfide (H 2 S) on growth, key oxidant such as hydrogen peroxide, mineral elements, and antioxidative defense in Capia-type red sweet pepper (Capsicum annuum L.) plants subjected to high concentration of zinc (Zn). A factorial experiment was designed with two Zn levels (0.05 and 0.5 mM) and 0.2 mM sodium hydrosulfide (NaHS) as a donor of H 2 S supplied in combination plus nutrient solution through the root zone. High level of Zn led to reduce dry mass, chlorophyll pigments, fruit yield, leaf maximum fluorescence, and relative water content, but enhanced endogenous hydrogen peroxide (H 2 O 2 ), free proline, malondialdehyde (MDA), electrolyte leakage (EL), H 2 S, as well as the activities of peroxidase (POD), catalase (CAT), and superoxide dismutase (SOD) enzymes. Exogenously applied NaHS significantly enhanced plant growth, fruit yield, water status, the levels of H 2 S and proline as well as the activities of different antioxidant enzymes, while it significantly suppressed EL, MDA, and H 2 O 2 contents in the pepper plants receiving low level Zn. NaHS application to the control plants did not significantly change all these parameters tested except the dry matter which increased significantly. High Zn regime led to increase intrinsic Zn levels in the leaves and roots, but it lowered leaf nitrogen (N), phosphorus (P), and iron (Fe) concentrations. However, NaHS reduces the Zn conc. and enhances Fe and N in leaf and root organs. It can be concluded that NaHS can mitigate the harmful effects of Zn on plant growth particularly by lowering the concentrations of H 2 O 2 , Zn, EL, and MDA, and enhancing the activities of enzymatic antioxidants and levels of essential nutrients in pepper plants.

  17. Determination of zinc and cadmium with characterized Electrodes of carbon and polyurethane modified by a bismuth film

    Directory of Open Access Journals (Sweden)

    Jossy Karla Brasil Bernardelli

    2011-09-01

    Full Text Available This study aims to use electrodes modified with bismuth films for the determination of zinc and cadmium. The film was electrodeposited ex situ on a composite carbon electrode with polyurethane and 2% metallic bismuth (2BiE and on a carbon bar electrode (CBE. The electrodes were characterized by scanning electron microscopy and energy dispersive spectroscopy. Through differential pulse anodic stripping voltammetry, the electrodes 2BiE and CBE containing bismuth films showed a limit of detection (LOD of 5.56 × 10-5 and 3.07 × 10-5 g.L-1 for cadmium and 1.24 × 10-4 and 1.53 × 10-4 g.L-1 for zinc, respectively. The presence of a bismuth film increased the sensitivity of both electrodes.

  18. Oxygen effect of transparent conducting amorphous Indium Zinc Tin Oxide films on Polyimide substrate for flexible electrode

    International Nuclear Information System (INIS)

    Ko, Yoon Duk; Lee, Chang Hun; Moon, Doo Kyung; Kim, Young Sung

    2013-01-01

    This paper discusses the effect of oxygen on the transparent conducting properties and mechanical durability of the amorphous indium zinc tin oxide (IZTO) films. IZTO films deposited on flexible clear polyimide (PI) substrate using pulsed direct current (DC) magnetron sputtering at room temperature under various oxygen partial pressures. All IZTO films deposited at room temperature exhibit an amorphous structure. The electrical and optical properties of the IZTO films were sensitively influenced by oxygen partial pressures. At optimized deposition condition of 3.0% oxygen partial pressure, the IZTO film shows the lowest resistivity of 6.4 × 10 −4 Ωcm, high transmittance of over 80% in the visible range, and figure of merit value of 3.6 × 10 −3 Ω −1 without any heat controls. In addition, high work function and good mechanical flexibility of amorphous IZTO films are beneficial to flexible applications. It is proven that the proper oxygen partial pressure is important parameter to enhance the transparent conducting properties of IZTO films on PI substrate deposited at room temperature. - Highlights: • Indium zinc tin oxide (IZTO) films were deposited on polyimide at room temperature. • Transparent conducting properties of IZTO were influenced with oxygen partial pressure. • The smooth surface and high work function of IZTO were beneficial to anode layer. • The mechanical reliability of IZTO shows better performance to indium tin oxide film

  19. Novel texturing method for sputtered zinc oxide films prepared at high deposition rate from ceramic tube targets

    Directory of Open Access Journals (Sweden)

    Hüpkes J.

    2011-10-01

    Full Text Available Sputtered and wet-chemically texture etched zinc oxide (ZnO films on glass substrates are regularly applied as transparent front contact in silicon based thin film solar cells. In this study, chemical wet etching in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl on aluminum doped zinc oxide (ZnO:Al films deposited by magnetron sputtering from ceramic tube targets at high discharge power (~10 kW/m target length is investigated. Films with thickness of around 800 nm were etched in diluted HCl acid and HF acid to achieve rough surface textures. It is found that the etching of the films in both etchants leads to different surface textures. A two steps etching process, which is especially favorable for films prepared at high deposition rate, was systematically studied. By etching first in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl these films are furnished with a surface texture which is characterized by craters with typical diameter of around 500 − 1000 nm. The resulting surface structure is comparable to etched films sputtered at low deposition rate, which had been demonstrated to be able to achieve high efficiencies in silicon thin film solar cells.

  20. Cobalt sulfide thin films: Chemical growth, reaction kinetics and microstructural analysis

    Energy Technology Data Exchange (ETDEWEB)

    Kamble, S.S. [Thin Film and Solar Studies Research Laboratory, Solapur University, Solapur 413 255, M.S. (India); Sikora, Andrzej [Electrotechnical Institute, Division of Electrotechnology and Materials Science, ul. M Skłodowskiej-Curie 55/61, 50-369 Wroclaw (Poland); Pawar, S.T. [Thin Film and Solar Studies Research Laboratory, Solapur University, Solapur 413 255, M.S. (India); Maldar, N.N. [Polymer Chemistry Department, Solapur University, Solapur 413 255, M.S. (India); Deshmukh, L.P., E-mail: laldeshmukh@gmail.com [Thin Film and Solar Studies Research Laboratory, Solapur University, Solapur 413 255, M.S. (India)

    2015-02-25

    Highlights: • CoS thin films were deposited from an aqueous alkaline bath. • The CoS thin films are polycrystalline with hexagonal crystal structure. • Microstructure consists of multifaceted webbed network of elongated CoS crystallites. • MFM images revealed presence of magnetic regions mimicking surface topography. • Influence of the complexing agents is also stressed by the bandgap measurements. - Abstract: CoS thin films were successfully deposited from an aqueous alkaline bath containing ammonia and TEA as the complexing agents. Under the pre-optimized conditions (temperature = 80 ± 0.5 °C, speed of the substrate rotation = 65 ± 2 rpm and deposition period = 90 min), ammonia and TEA quantities in the reaction bath were found to play a decisive role in the final product yield. Highly uniform, dark sea-green colored and tightly adherent deposits were obtained at our experimental conditions. As-obtained CoS thin films were polycrystalline in nature with hexagonal class of crystal system as derived from the X-ray diffraction analysis. Complex multifaceted webbed network of as-grown CoS crystals elongated and threaded into each other were observed through a scanning electron microscope. Atomic force micrographs revealed collapsing of the hillocks and filling of the valleys triggering decrease in the RMS roughness for increased TEA and NH{sub 3} quantities. Magnetic force microscopy (MFM) was employed to study surface topography in terms of magnetic mapping. MFM images highlighted the existence of the magnetic clusters imitating topography. Broad absorption edge with high absorption coefficient (α ≈ 10{sup 4} cm{sup −1}) was observed for as-grown CoS thin films. Determined values of the optical bandgaps revealed influence of complexing environment on the final product.

  1. Investigations of the thermal treatment effect on the generation of cadmium sulfide clusters in polymeric films

    International Nuclear Information System (INIS)

    Stanculescu, Anca; Socol, M.; Stanculescu, F.

    2002-01-01

    In the last years a special interest has been paid to the field of nanometer-sized semiconductor compound crystalline clusters synthesized in different matrix (inorganic or organic), due to their special physical and chemical properties intermediate between the molecular and bulk limits. To obtain the thin film samples of CdS particles embedded in a polymeric transparent matrix, as bisphenol A polycarbonate, we followed a process containing three important steps: preparation of the so-called 'mother solution', film deposition and thermal treatment. The samples obtained after the first two steps were heat treated at different temperatures (90 deg. C and 150 deg. C) for 0.5 h, 1 h and 1.5 h, and we have analyzed the influence of these parameters on the film quality using UV-VIS spectrophotometric methods. This paper presents a study of the influence of the thermal treatment on the CdS clusters' generation process and film quality and homogeneity. The parameters of the processing procedure of the polymeric film, as the cooling rate, have a great influence on the rate of germination and development of the crystalline phase. A slow cooling rate is a more favorable process for CdS clusters' formation, indicated .by structured features of the fundamental absorption situated between 350-450 nm. When the temperature for thermal treatment increases to 90 deg. C a sharp rise and a shift to shorter wavelengths of the absorption onset edge was observed. This shift proves the existence of a weak quantum confinement effects. We concluded that these two parameters have some equivalent effects on the CdS clusters' generation in polymeric matrix. Varying the treatment duration with a fixed temperature produces similar results as the fixed duration, varied temperature treatment. (authors)

  2. Transport physics and device modeling of zinc oxide thin-film transistors. Pt. II: Contact Resistance in Short Channel Devices

    NARCIS (Netherlands)

    Torricelli, F.; Meijboom, J.R.; Smits, E.; Tripathi, A.K.; Gelinck, G.H.; Colalongo, L.; Kovacs-Vajna, Z.M.; Leeuw, D. de; Cantatore, E.

    2011-01-01

    Abstract—Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for

  3. Transport physics and device modeling of zinc oxide thin film transistors - part II : contact resistance in short channel devices

    NARCIS (Netherlands)

    Torricelli, F.; Smits, E.C.P.; Meijboom, J.R.; Tripathi, A.K.; Gelinck, G.H.; Colalongo, L.; Kovacs-Vajna, Z.M.; Cantatore, E.

    2011-01-01

    Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for the

  4. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

    KAUST Repository

    Nayak, Pradipta K.

    2013-05-08

    It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.

  5. Structural and optical properties of arsenic sulfide films synthesized by a novel PECVD-based approach

    Science.gov (United States)

    Mochalov, Leonid; Kudryashov, Mikhail; Logunov, Aleksandr; Zelentsov, Sergey; Nezhdanov, Aleksey; Mashin, Alexandr; Gogova, Daniela; Chidichimo, Giuseppe; De Filpo, Giovanni

    2017-11-01

    A new plasma-enhanced chemical vapor deposition-based (PECVD) approach for synthesizing of As-S films, with As content in the range 60-40 at.%, is demonstrated. The process has been carried out in a low-temperature Ar-plasma, employing for the first time volatile As and S as precursors. Utilization of inorganic elemental precursors, in contrast to the typically used in CVD metal-organic compounds or volatile hydrides/halides of Va- and VIa-group-elements, gives the possibility to reach the highest quality and purity of the As-S ≿halcogenide films. Quantum-chemical calculations have been performed to gain insight into the PECVD As-S chalcogenide films structure and the mechanism of its formation in the plasma discharge. An additional vibrational band near 650 cm-1 corresponding to cycled 2-dimensional units is observed by Raman spectroscopy. The process developed is cost-efficient one due to the very precise control and the long-term stability of the plasma parameters and it possesses a high potential for large-area applications such as fabrication of miniature integrated optical elements and 2D/3D printing of optical devices.

  6. Corrosion Behavior of Cu40Zn in Sulfide-Polluted 3.5% NaCl Solution

    Science.gov (United States)

    Song, Q. N.; Xu, N.; Bao, Y. F.; Jiang, Y. F.; Gu, W.; Yang, Z.; Zheng, Y. G.; Qiao, Y. X.

    2017-10-01

    The corrosion behavior of a duplex-phase brass Cu40Zn in clean and sulfide-polluted 3.5% NaCl solutions was investigated by conducting electrochemical and gravimetric measurements. The corrosion product films were analyzed by scanning electron microscopy, energy-dispersive spectroscopy and x-ray diffraction. The presence of sulfide shifted the corrosion potential of Cu40Zn toward a more negative value by 100 mV and increased the mass loss rate by a factor of 1.257 compared with the result in the clean solution. The corrosion product film in the clean solution was thin and compact; it mainly consisted of oxides, such as ZnO and Cu2O. By contrast, the film in the sulfide-polluted solution was thick and porous. It mainly contained sulfides and zinc hydroxide chloride (i.e., Zn5(OH)8Cl2·H2O). The presence of sulfide ions accelerated the corrosion damage of Cu40Zn by hindering the formation of protective oxides and promoting the formation of a defective film which consisted of sulfides and hydroxide chlorides.

  7. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    KAUST Repository

    Hanna, Amir

    2015-12-04

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (ZnO) present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it to the conventional planar architecture. The WC architecture circuits have shown 2× higher peak-to-peak output voltage for the same input voltage. They also have 3× lower high-to-low propagation delay times, respectively, when compared to the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field effect mobility due to higher gate field electrostatics control.

  8. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    Directory of Open Access Journals (Sweden)

    M. Morales-Masis

    2014-09-01

    Full Text Available Improving the conductivity of earth-abundant transparent conductive oxides (TCOs remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  9. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Jeangros, Q. [Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Hessler-Wyser, A. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Nicolay, S. [Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Ballif, C. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland)

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  10. Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

    International Nuclear Information System (INIS)

    Zhang Yong-Hui; Mei Zeng-Xia; Liang Hui-Li; Du Xiao-Long

    2017-01-01

    Flexible and transparent electronics enters into a new era of electronic technologies. Ubiquitous applications involve wearable electronics, biosensors, flexible transparent displays, radio-frequency identifications (RFIDs), etc. Zinc oxide (ZnO) and relevant materials are the most commonly used inorganic semiconductors in flexible and transparent devices, owing to their high electrical performances, together with low processing temperatures and good optical transparencies. In this paper, we review recent advances in flexible and transparent thin-film transistors (TFTs) based on ZnO and relevant materials. After a brief introduction, the main progress of the preparation of each component (substrate, electrodes, channel and dielectrics) is summarized and discussed. Then, the effect of mechanical bending on electrical performance is highlighted. Finally, we suggest the challenges and opportunities in future investigations. (paper)

  11. Structure of a zinc oxide ultra-thin film on Rh(100)

    Energy Technology Data Exchange (ETDEWEB)

    Yuhara, J.; Kato, D.; Matsui, T. [Department of Materials, Physics and Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Mizuno, S. [Department of Molecular and Material Sciences, Kyushu University, Kasuga, Fukuoka 816–8580 (Japan)

    2015-11-07

    The structural parameters of ultra-thin zinc oxide films on Rh(100) are investigated using low-energy electron diffraction intensity (LEED I–V) curves, scanning tunneling microscopy (STM), and first-principles density functional theory (DFT) calculations. From the analysis of LEED I–V curves and DFT calculations, two optimized models A and B are determined. Their structures are basically similar to the planer h-BN ZnO(0001) structure, although some oxygen atoms protrude from the surface, associated with an in-plane shift of Zn atoms. From a comparison of experimental STM images and simulated STM images, majority and minority structures observed in the STM images represent the two optimized models A and B, respectively.

  12. Optical properties of cadmium sulfide nanocrystal film prepared by electrochemical synthesis at liquid-liquid interface

    International Nuclear Information System (INIS)

    Luan Yemei; An Maozhong; Lu Guoqi

    2006-01-01

    Dendritic nanocrystalline CdS film was deposited at liquid-liquid interface of surfactants and an electrolyte containing 4 mmol L -1 cadmium chloride (CdCl 2 ) and 16 mmol L -1 thioacetamide (CH 3 CSNH 2 ) with an initial pH value of 5 at 15 deg. C by electrochemical synthesis. The nanofilm was characterized by transmission electron microscopy (TEM), field emission scanning electron microscope (FE-SEM), atomic force microscopy (AFM), ultraviolet visible (UV-vis) absorption spectroscopy and fluorescence spectroscopy. The surface morphology and particle size of the nanofilm were investigated by AFM, SEM and TEM, and the crystalline size was 30-50 nm. The thickness of the nanofilm calculated by optical absorption spectrum was 80 nm. The microstructure and composition of the nanofilm was investigated by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), showing its polycrystalline structure consisting of CdS and Cd. Optical properties of the nanofilm were investigated systematically by UV-vis absorption and fluorescence spectroscopy. A λ onset blue shift compared with bulk CdS was observed in the absorption spectra. Fluorescence spectra of the nanofilm indicated that the CdS nanofilm emitted blue and green light. The nanocomposites film electrode will bring about anodic photocurrent during illumination, showing that the transfer of cavities produces photocurrent

  13. Plasma-assisted co-evaporation of {beta}-indium sulfide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kosaraju, Sreenivas; Marino, Joseph A.; Harvey, John A.; Wolden, Colin A. [Department of Chemical Engineering, Colorado School of Mines, Golden, CO 80401 (United States)

    2006-05-05

    This paper describes the development of plasma-assisted co-evaporation (PACE) for the formation of {beta}-In{sub 2}S{sub 3} thin films. Indium was supplied by conventional thermal evaporation, while the chalcogen gas precursor (H{sub 2}S) was activated using an inductively coupled plasma (ICP) source. Using a combination of optical emission spectroscopy and mass spectrometry it was shown that the ICP effectively dissociated H{sub 2}S, producing atomic sulfur. Transport modeling was used to quantify the flux distributions of the co-evaporated metal and the plasma-generated species impinging the substrate. Model predictions were validated by measurements of deposition rate and film properties. Substantial improvements in both materials utilization and substrate temperature reduction were realized with respect to conventional co-evaporation. {beta}-In{sub 2}S{sub 3} was formed as low as 100{sup o}C and it was observed that quality was a strong function of S/In ratio. The grain size decreased and the optical band gap increased as the substrate temperature was reduced. (author)

  14. Formation of cellular films consisting of wurtzite-type zinc oxide nanosheets by mediation of phosphate anions

    International Nuclear Information System (INIS)

    Yamabi, Satoshi; Yahiro, Junko; Iwai, Satoko; Imai, Hiroaki

    2005-01-01

    We successfully prepared a wide variety of wurtzite-type zinc oxide films exhibiting columnar, cellular and densely packed morphologies in a simple aqueous solution system containing phosphate anions. As the phosphate concentration increased, the shape of crystalline units composing the films varied from hexagonal needles into seaweed-like sheets. A novel type of open cellular structures was obtained by assembly of nanoscale zinc oxide sheets covered with phosphate. Specific adsorption of phosphate anions on (001) of the wurtzite-type crystal flattened the crystal grains, and then induced the structural evolution into a cellular form. A blue shift of the absorption edge suggested that the quantum size effect occurred in the nanoscale platy crystals composing the cellular films

  15. Improvement of the characteristics of chemical bath deposition-cadmium sulfide films deposited on an O{sub 2} plasma-treated polyethylene terephthalate substrate

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Donggun [Department of Electronic Engineering, Korea National University of Transportation, Chungju-si, Chungcheongbuk-do 380-702 (Korea, Republic of); Lee, Jaehyeong [School of Electronic and Electrical Engineering, Sungkyunkwan University 300, Cheoncheon-dong, Jangan-gu, Sunwon, Kyeonggi-do, 440-746 (Korea, Republic of); Song, Woochang, E-mail: wcsong@kangwon.ac.kr [Department of Electrical Engineering, Kangwon National University, Samcheok-si, Gangwon-do 245-711 (Korea, Republic of)

    2013-11-01

    We prepared cadmium sulfide (CdS) films on a polyethylene terephthalate (PET) substrate by a chemical bath deposition (CBD) technique. To improve the adhesion between the CdS film and the PET substrate, the substrate was pre-treated with an O{sub 2} plasma by an inductively coupled plasma. The surface characterizations of the pre-treated PET substrate were analyzed by a contact angle measurement and atomic force microscopy. The results showed that that O{sub 2} plasma-treated PET films had more hydrophilic surface. The hydrophilic property of the substrate is one of the important factors when a film is prepared by CBD. The structural and the optical properties of the CdS films, deposited on PET substrates, were analyzed by using a scanning electron microscope, X-ray diffraction and a UV–visible spectrophotometer. The CdS films were formed on a compact and granular structure. The optical transmittance was also improved. Therefore, the O{sub 2} plasma treatment of a PET surface is an effective method of preparing CdS films deposited on substrates by CBD. - Highlights: • Chemical bath deposition of CdS film for flexible solar cells • O{sub 2} plasma treatment improved adhesion between the CdS and polymer substrate • Identification of best fabrication condition of CdS window layers for flexible solar cells.

  16. Study on the sulfidation behavior of smithsonite

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Dandan; Wen, Shuming, E-mail: shmwen@126.com; Deng, Jiushuai, E-mail: dengshuai689@163.com; Liu, Jian; Mao, Yingbo

    2015-02-28

    Highlights: • Zeta potential showed that the pH{sub IEP} of smithsonite decreased from 7.7 to 6. • ICP test showed the gradual reduction of C{sub S} in the solution. • SEM showed that the mineral surface was partially changed to ZnS film. • XPS indicated that the presence of a characteristic signal peak of sulfur ions. - Abstract: Zinc extraction from low-grade mineral resources of oxidized zinc has recently become a focus of study. Sulfidation is an important process in oxidized ore flotation. In this study, the influence of sulfur ion adsorption on smithsonite surface was investigated with the use of zeta potential, inductively coupled plasma (ICP), scanning electron microscope (SEM), and X-ray photoelectron spectroscopic studies. Zeta potential measurements of sodium sulfide showed that sulfur ions were adsorbed onto the surface of pure smithsonite, as evidenced by the increased negative charge and the decrease in the pH{sub IEP} of smithsonite from 7.7 to 6 after sodium sulfide treatment. The ICP test revealed the gradual reduction in sulfur ion adsorption onto the surface of smithsonite in pulp sulfur. After 30 min of absorption, C{sub S} in the solution declined from 1000 × 10{sup −6} mol/L to 1.4 × 10{sup −6} mol/L. SEM results showed that the mineral surface was partially changed to ZnS film after sodium sulfide treatment, whereas EDS analysis results showed that 2% S is contained on the smithsonite surface. X-ray photoelectron spectroscopy results indicated the presence of a characteristic signal peak of sulfur ions after sulfidation. Sulfur concentration increased to 11.89%, whereas oxygen concentration decreased from 42.31% to 13.74%. Sulfur ions were not only present during chemical adsorption, but were also incorporated into the crystal lattices of minerals by the exchange reaction between S{sup 2−} and CO{sub 3}{sup 2−} ions.

  17. A statistical approach for optimizing parameters for electrodeposition of indium (III) sulfide (In2S3) films, potential low-hazard buffer layers for photovoltaic applications

    Science.gov (United States)

    Mughal, Maqsood Ali

    Clean and environmentally friendly technologies are centralizing industry focus towards obtaining long term solutions to many large-scale problems such as energy demand, pollution, and environmental safety. Thin film solar cell (TFSC) technology has emerged as an impressive photovoltaic (PV) technology to create clean energy from fast production lines with capabilities to reduce material usage and energy required to manufacture large area panels, hence, lowering the costs. Today, cost ($/kWh) and toxicity are the primary challenges for all PV technologies. In that respect, electrodeposited indium sulfide (In2S3) films are proposed as an alternate to hazardous cadmium sulfide (CdS) films, commonly used as buffer layers in solar cells. This dissertation focuses upon the optimization of electrodeposition parameters to synthesize In2S3 films of PV quality. The work describe herein has the potential to reduce the hazardous impact of cadmium (Cd) upon the environment, while reducing the manufacturing cost of TFSCs through efficient utilization of materials. Optimization was performed through use of a statistical approach to study the effect of varying electrodeposition parameters upon the properties of the films. A robust design method referred-to as the "Taguchi Method" helped in engineering the properties of the films, and improved the PV characteristics including optical bandgap, absorption coefficient, stoichiometry, morphology, crystalline structure, thickness, etc. Current density (also a function of deposition voltage) had the most significant impact upon the stoichiometry and morphology of In2S3 films, whereas, deposition temperature and composition of the solution had the least significant impact. The dissertation discusses the film growth mechanism and provides understanding of the regions of low quality (for example, cracks) in films. In2S3 films were systematically and quantitatively investigated by varying electrodeposition parameters including bath

  18. Diagnostic study of the roughness surface effect of zirconium on the third-order nonlinear-optical properties of thin films based on zinc oxide nanomaterials

    International Nuclear Information System (INIS)

    Bahedi, K.; Addou, M.; El Jouad, M.; Sofiani, Z.; Alaoui Lamrani, M.; El Habbani, T.; Fellahi, N.; Bayoud, S.; Dghoughi, L.; Sahraoui, B.; Essaidi, Z.

    2009-01-01

    Zinc oxide (ZnO) and zirconium doped zinc oxide (ZnO:Zr) thin films were deposited by reactive chemical pulverization spray pyrolysis technique on heated glass substrates at 500 deg. C using zinc and zirconium chlorides as precursors. Effects of zirconium doping agent and surface roughness on the nonlinear optical properties were investigated in detail using atomic force microscopy (AFM) and third harmonic generation (THG) technique. The best value of nonlinear optical susceptibility χ (3) was obtained from the doped films with less roughness. A strong third order nonlinear optical susceptibility χ (3) = 20.12 x 10 -12 (esu) of the studied films was found for the 3% doped sample.

  19. The effect of Mg dopants on magnetic and structural properties of iron oxide and zinc ferrite thin films

    Science.gov (United States)

    Saritaş, Sevda; Ceviz Sakar, Betul; Kundakci, Mutlu; Yildirim, Muhammet

    2018-06-01

    Iron oxide thin films have been obtained significant interest as a material that put forwards applications in photovoltaics, gas sensors, biosensors, optoelectronic and especially in spintronics. Iron oxide is one of the considerable interest due to its chemical and thermal stability. Metallic ion dopant influenced superexchange interactions and thus changed the structural, electrical and magnetic properties of the thin film. Mg dopped zinc ferrite (Mg:ZnxFe3-xO4) crystal was used to avoid the damage of Fe3O4 (magnetite) crystal instead of Zn2+ in this study. Because the radius of the Mg2+ ion in the A-site (tetrahedral) is almost equal to that of the replaced Fe3+ ion. Inverse-spinel structure in which oxygen ions (O2-) are arranged to form a face-centered cubic (FCC) lattice where there are two kinds of sublattices, namely, A-site and B-site (octahedral) interstitial sites and in which the super exchange interactions occur. In this study, to increase the saturation of magnetization (Ms) value for iron oxide, inverse-spinal ferrite materials have been prepared, in which the iron oxide was doped by multifarious divalent metallic elements including Zn and Mg. Triple and quaternary; iron oxide and zinc ferrite thin films with Mg metal dopants were grown by using Spray Pyrolysis (SP) technique. The structural, electrical and magnetic properties of Mg dopped iron oxide (Fe2O3) and zinc ferrite (ZnxFe3-xO4) thin films have been investigated. Vibrating Sample Magnetometer (VSM) technique was used to study for the magnetic properties. As a result, we can say that Mg dopped iron oxide thin film has huge diamagnetic and of Mg dopped zinc ferrite thin film has paramagnetic property at bigger magnetic field.

  20. Preparation of Polyimide/Zinc Oxide Nanocomposite Films via an Ion-Exchange Technique and Their Photoluminescence Properties

    Directory of Open Access Journals (Sweden)

    Shuxiang Mu

    2011-01-01

    Full Text Available Polyimide (PI composite films with ZnO nanoparticles embedded in the surface layer were prepared by alkali hydrolyzation following ion exchange in Zn(NO32 solution and thermal treatment of the zinc ion-doped PI films in air atmosphere. The effect of alkali treatment, ion exchange, and thermal treatment conditions was investigated in relation to the amount of zinc atomic loading, morphology, photoluminescence (PL, and thermal properties of the PI/ZnO composite films using ICP, XPS, FE-SEM, TEM, Raman microscope, TGA, and DSC. ZnO nanoparticles were formed slowly and dispersed uniformly in the surface-modified layers of PI films with an average diameter of 20 nm. The PL spectra of all the PI/ZnO nanocomposite films obtained at 350°C/7 h possessed a weak ultraviolet emission peak and a broad and strong visible emission band. The PI/ZnO nanocomposite films maintained the excellent thermal property of the host PI films.

  1. Structural origin of surface transformations in arsenic sulfide thin films upon UV-irradiation

    International Nuclear Information System (INIS)

    Kovalskiy, Andriy; Vlcek, Miroslav; Palka, Karel; Buzek, Jan; York-Winegar, James; Oelgoetz, Justin; Golovchak, Roman; Shpotyuk, Oleh; Jain, Himanshu

    2017-01-01

    Photostructural transformations within As_xS_1_0_0_-_x (x = 30, 33, 35, 40) thin films upon exposure to LED light of different wavelengths, in both air and argon environments have been studied by high resolution XPS, Raman spectroscopy and LEIS methods. These complementary results show that light of energies close to the band gap does not modify chemical composition of the surface, but induces simple photopolymerization reactions. Superbandgap UV light, however, significantly increases S/As ratio on the surface due to formation of S-rich layer under both environmental conditions. It is proposed that photovaporization of both oxide and non-oxide cage-like molecules is responsible for the observed effect.

  2. Structural origin of surface transformations in arsenic sulfide thin films upon UV-irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kovalskiy, Andriy, E-mail: kovalskiya@apsu.edu [Department of Physics & Astronomy, Austin Peay State University, 601 College St., Clarksville, TN 37044 (United States); Vlcek, Miroslav [Center of Materials and Nanotechnologies, Faculty of Chemical Technology, University of Pardubice, nam. Cs. Legii 565, 530 02 Pardubice (Czech Republic); Palka, Karel [Center of Materials and Nanotechnologies, Faculty of Chemical Technology, University of Pardubice, nam. Cs. Legii 565, 530 02 Pardubice (Czech Republic); Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); Buzek, Jan [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic); York-Winegar, James; Oelgoetz, Justin; Golovchak, Roman [Department of Physics & Astronomy, Austin Peay State University, 601 College St., Clarksville, TN 37044 (United States); Shpotyuk, Oleh [Vlokh Institute of Physical Optics, 23 Dragomanov str., Lviv 79005 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestochowa PL-42201 (Poland); Jain, Himanshu [Department of Materials Science & Engineering, Lehigh University, 5 East Packer Ave., Bethlehem, PA 18015 (United States)

    2017-02-01

    Photostructural transformations within As{sub x}S{sub 100-x} (x = 30, 33, 35, 40) thin films upon exposure to LED light of different wavelengths, in both air and argon environments have been studied by high resolution XPS, Raman spectroscopy and LEIS methods. These complementary results show that light of energies close to the band gap does not modify chemical composition of the surface, but induces simple photopolymerization reactions. Superbandgap UV light, however, significantly increases S/As ratio on the surface due to formation of S-rich layer under both environmental conditions. It is proposed that photovaporization of both oxide and non-oxide cage-like molecules is responsible for the observed effect.

  3. Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xin-liang, E-mail: cxlruzhou@163.com; Wang, Fei; Geng, Xin-hua; Huang, Qian; Zhao, Ying; Zhang, Xiao-dan

    2013-09-02

    Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In{sub 2}O{sub 3}:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10{sup −4} Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells.

  4. Preparation of Zinc Oxide (ZnO) Thin Film as Transparent Conductive Oxide (TCO) from Zinc Complex Compound on Thin Film Solar Cells: A Study of O2 Effect on Annealing Process

    Science.gov (United States)

    Muslih, E. Y.; Kim, K. H.

    2017-07-01

    Zinc oxide (ZnO) thin film as a transparent conductive oxide (TCO) for thin film solar cell application was successfully prepared through two step preparations which consisted of deposition by spin coating at 2000 rpm for 10 second and followed by annealing at 500 °C for 2 hours under O2 and ambient atmosphere. Zinc acetate dehydrate was used as a precursor which dissolved in ethanol and acetone (1:1 mol) mixture in order to make a zinc complex compound. In this work, we reported the O2 effect, reaction mechanism, structure, morphology, optical and electrical properties. ZnO thin film in this work shows a single phase of wurtzite, with n-type semiconductor and has band gap, carrier concentration, mobility, and resistivity as 3.18 eV, 1.21 × 10-19cm3, 11 cm2/Vs, 2.35 × 10-3 Ωcm respectively which is suitable for TCO at thin film solar cell.

  5. Selenium Sulfide

    Science.gov (United States)

    Selenium sulfide, an anti-infective agent, relieves itching and flaking of the scalp and removes the dry, ... Selenium sulfide comes in a lotion and is usually applied as a shampoo. As a shampoo, selenium ...

  6. Comparison of the method of diffusive gels in thin films with conventional extraction techniques for evaluating zinc accumulation in plants and isopods

    International Nuclear Information System (INIS)

    Koster, Marijke; Reijnders, Lucas; Oost, Nathalie R. van; Peijnenburg, Willie J.G.M.

    2005-01-01

    The measurement of diffusive gels in thin films (DGT) has recently been developed to assess metal bioavailability in soils. The DGT-method is based on diffusion in a porous matrix. To test the predictive capabilities of the method with regard to metal bioavailability, a study was set up with 28 soils having a variety of textures and amounts of zinc salts added. Correlation and regression analyses were performed to compare DGT-extracted zinc levels to zinc concentrations obtained by extraction with 0.01 M CaCl 2 and 0.43 M HNO 3 , digestion with aqua regia and the zinc concentration in pore water. The amount of zinc extracted with CaCl 2 correlated well with DGT-extracted zinc levels in all soils spiked with different amounts of ZnCl 2 . A similar correlation was not found for zinc concentrations in soil samples collected in the field. Experiments were performed to compare zinc content in organisms and in soils. The organisms tested were plants (grass, lettuce and lupine) and the hard bodied soil dwelling isopod Oniscus asellus. Good correlations were found between zinc accumulation in grass and lettuce and the C E (effective concentration) measured by a DGT-device, CaCl 2 extracted zinc and the zinc content in the pore water of all soils. The correlation with C E was not significant for lupine, neither for spiked soils, nor for field soils (p ≤ 0.001). Zinc levels in the isopods were not significantly related to any set of zinc measurements. From a synthesis of all results obtained it is concluded that the DGT-methodology does not have an additional value in predicting bioavailability of zinc in terrestrial ecosystems as compared to conventional extraction methods. - Capsule: The newly developed method of diffusive gels in Thin films (DGT) does not have an added value over conventional extraction techniques in predicting zinc uptake by plants and isopods

  7. Structural and X-Ray Photoelectron Spectroscopy Study of Al-Doped Zinc-Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Bong Ju Lee

    2015-01-01

    Full Text Available Al-doped zinc-oxide (AZO thin films were prepared by RF magnetron sputtering at different oxygen partial pressures and substrate temperatures. The charge-carrier concentrations in the films decreased from 1.69 × 1021 to 6.16 × 1017 cm−3 with increased gas flow rate from 7 to 21 sccm. The X-ray diffraction (XRD patterns show that the (002/(103 peak-intensity ratio decreased as the gas flow rate increased, which was related to the increase of AZO thin film disorder. X-ray photoelectron spectra (XPS of the O1s were decomposed into metal oxide component (peak A and the adsorbed molecular oxygen on thin films (peak B. The area ratio of XPS peaks (A/B was clearly related to the stoichiometry of AZO films; that is, the higher value of A/B showed the higher stoichiometric properties.

  8. Modeling drain current of indium zinc oxide thin film transistors prepared by solution deposition technique

    Science.gov (United States)

    Qiang, Lei; Liang, Xiaoci; Cai, Guangshuo; Pei, Yanli; Yao, Ruohe; Wang, Gang

    2018-06-01

    Indium zinc oxide (IZO) thin film transistor (TFT) deposited by solution method is of considerable technological interest as it is a key component for the fabrication of flexible and cheap transparent electronic devices. To obtain a principal understanding of physical properties of solution-processed IZO TFT, a new drain current model that account for the charge transport is proposed. The formulation is developed by incorporating the effect of gate voltage on mobility and threshold voltage with the carrier charges. It is demonstrated that in IZO TFTs the below threshold regime should be divided into two sections: EC - EF > 3kT and EC - EF ≤ 3kT, where kT is the thermal energy, EF and EC represent the Fermi level and the conduction band edge, respectively. Additionally, in order to describe conduction mechanisms more accurately, the extended mobility edge model is conjoined, which can also get rid of the complicated and lengthy computations. The good agreement between measured and calculated results confirms the efficiency of this model for the design of integrated large-area thin film circuits.

  9. Zinc oxide-potassium ferricyanide composite thin film matrix for biosensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Saha, Shibu [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Arya, Sunil K. [Department of Science and Technology Centre on Biomolecular Electronics, National Physical Laboratory, New Delhi 110012 (India); Singh, S.P. [Department of Engineering Science and Materials, University of Puerto Rico, Mayaguez, PR 00680 (United States); Sreenivas, K. [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Malhotra, B.D. [Department of Science and Technology Centre on Biomolecular Electronics, National Physical Laboratory, New Delhi 110012 (India); Gupta, Vinay, E-mail: vgupta@physics.du.ac.in [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2009-10-27

    Thin film of zinc oxide-potassium ferricyanide (ZnO-KFCN) composite has been deposited on indium tin oxide (ITO) coated corning glass using pulsed laser deposition (PLD). The composite thin film electrode has been exploited for amperometric biosensing in a mediator-free electrolyte. The composite matrix has the advantages of high iso-electric point of ZnO along with enhanced electron communication due to the presence of a redox species in the matrix itself. Glucose oxidase (GOx) has been chosen as the model enzyme for studying the application of the developed matrix to biosensing. The sensing response of the bio-electrode, GOx/ZnO-KFCN/ITO/glass, towards glucose was studied using cylic voltammetry (CV) and photometric assay. The bio-electrode exhibits good linearity from 2.78 mM to 11.11 mM glucose concentration. The low value of Michaelis-Menten constant (1.69 mM) indicates an enhanced affinity of the immobilized enzyme towards its substrate. A quassireversible system is obtained with the composite matrix. The results confirm promising application of the ZnO-KFCN composite matrix for amperometric biosensing applications in a mediator-less electrolyte that could lead to the realization of an integrated lab-on-chip device.

  10. Zinc oxide-potassium ferricyanide composite thin film matrix for biosensing applications

    International Nuclear Information System (INIS)

    Saha, Shibu; Arya, Sunil K.; Singh, S.P.; Sreenivas, K.; Malhotra, B.D.; Gupta, Vinay

    2009-01-01

    Thin film of zinc oxide-potassium ferricyanide (ZnO-KFCN) composite has been deposited on indium tin oxide (ITO) coated corning glass using pulsed laser deposition (PLD). The composite thin film electrode has been exploited for amperometric biosensing in a mediator-free electrolyte. The composite matrix has the advantages of high iso-electric point of ZnO along with enhanced electron communication due to the presence of a redox species in the matrix itself. Glucose oxidase (GOx) has been chosen as the model enzyme for studying the application of the developed matrix to biosensing. The sensing response of the bio-electrode, GOx/ZnO-KFCN/ITO/glass, towards glucose was studied using cylic voltammetry (CV) and photometric assay. The bio-electrode exhibits good linearity from 2.78 mM to 11.11 mM glucose concentration. The low value of Michaelis-Menten constant (1.69 mM) indicates an enhanced affinity of the immobilized enzyme towards its substrate. A quassireversible system is obtained with the composite matrix. The results confirm promising application of the ZnO-KFCN composite matrix for amperometric biosensing applications in a mediator-less electrolyte that could lead to the realization of an integrated lab-on-chip device.

  11. Infrared reflectance studies of hillock-like porous zinc oxide thin films

    International Nuclear Information System (INIS)

    Ching, C.G.; Lee, S.C.; Ng, S.S.; Hassan, Z.; Abu Hassan, H.

    2013-01-01

    We investigated the infrared (IR) reflectance characteristics of hillock-like porous zinc oxide (ZnO) thin films on silicon substrates. The IR reflectance spectra of the porous samples exhibited an extra resonance hump in the reststrahlen region of ZnO compared with the as-grown sample. Oscillation fringes with different behaviors were also observed in the non-reststrahlen region of ZnO. Standard multilayer optic technique was used with the effective medium theory to analyze the observations. Results showed that the porous ZnO layer consisted of several sublayers with different porosities and thicknesses. These findings were confirmed by scanning electron microscopy measurements. - Highlights: • Multilayer porous assumption qualitatively increased the overall spectra fitting. • IR reflectance is a sensitive method to probe the multilayer porous structure. • Hillock-like porous ZnO thin films fabricated using electrochemical etching method. • The thickness and porosity of the samples were determined. • Formation of extra resonance hump was due to splitting of reststrahlen band

  12. Low temperature-pyrosol-deposition of aluminum-doped zinc oxide thin films for transparent conducting contacts

    Energy Technology Data Exchange (ETDEWEB)

    Rivera, M.J. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico); Ramírez, E.B. [Universidad Autónoma de la Ciudad de México, Calle Prolongación San Isidro Núm. 151, Col. San Lorenzo Tezonco, Iztapalapa, 09790 México, D.F. (Mexico); Juárez, B.; González, J.; García-León, J.M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico); Escobar-Alarcón, L. [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México, D.F. 11801 (Mexico); Alonso, J.C., E-mail: alonso@unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico)

    2016-04-30

    Aluminum doped-zinc oxide (ZnO:Al) thin films with thickness ~ 1000 nm have been deposited by the ultrasonic spray pyrolysis technique using low substrate temperatures in the range from 285 to 360 °C. The electrical and optical properties of the ZnO:Al (AZO) films were investigated by Uv–vis spectroscopy and Hall effect measurements. The crystallinity and morphology of the films were analyzed using X-ray diffraction (XRD), atomic force microscopy (AFM), and high resolution scanning electron microcopy (SEM). XRD results reveal that all the films are nanocrystalline with a hexagonal wurtzite structure with a preferential orientation in the (002) plane. The size of the grains calculated from Scherrer's formula was in the range from 28 to 35 nm. AFM and SEM analysis reveals that the grains form round and hexagonal shaped aggregates at high deposition temperatures and larger rice shaped aggregates at low temperatures. All the films have a high optical transparency (~ 82%). According to the Hall measurements the AZO films deposited at 360 and 340 °C had resistivities of 2.2 × 10{sup −3}–4.3 × 10{sup −3} Ω cm, respectively. These films were n-type and had carrier concentrations and mobilities of 3.71–2.54 × 10{sup 20} cm{sup −3} and 7.4–5.7 cm{sup 2}/V s, respectively. The figure of merit of these films as transparent conductors was in the range of 2.6 × 10{sup −2} Ω{sup −1}–4.1 × 10{sup −2} Ω{sup −1}. Films deposited at 300 °C and 285 °C, had much higher resistivities. Based on the thermogravimetric analysis of the individual precursors used for film deposition, we speculate on possible film growing mechanisms that can explain the composition and electrical properties of films deposited under the two different ranges of temperatures. - Highlights: • Aluminum doped zinc oxide thin films were deposited at low temperatures by pyrosol. • Low resistivity was achieved from 340 °C substrate temperature. • All films deposited

  13. Influence of pH on optoelectronic properties of zinc sulphide thin films prepared using hydrothermal and spin coating method

    Science.gov (United States)

    Choudapur, V. H.; Bennal, A. S.; Raju, A. B.

    2018-04-01

    The ZnS nanomaterial is synthesized by hydrothermal method under optimized conditions using Zinc acetate and sodium sulphide as precursors. The Zinc Sulphide thin films are obtained by simple spin coating method with high optical transmittance. The prepared thin films are adhesive and uniform. The x-ray diffraction analysis showed that the films are polycrystalline in cubic phase with the preferred orientation along (111) direction. Current-voltage curves were recorded at room temperature using Keithley 617 programmable electrometer and conductivity is calculated for the film coated on ITO by two probe method. The pH of the solution is varied by using ammonia and hydrochloric acid. The comparative studies of effect of pH on the morphology, crystallanity and optoelectronic properties of the films are studied. It is observed that the pH of the solution has large influence on optoelectronic properties. The thin film prepared with neutral pH has higher crystallanity, bandgap and conductivity as compared to the samples prepared in acidic or basic solutions.

  14. Preparation, characterization and electrocatalytic behavior of zinc oxide/zinchexacyanoferrate and ruthenium oxide hexacyanoferrate hybrid film-modified electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Chu, H.-W.; Thangamuthu, R. [Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao East Road, Taipei 106, Taiwan (China); Chen, S.-M. [Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao East Road, Taipei 106, Taiwan (China)], E-mail: smchen78@ms15.hinet.net

    2008-02-15

    Polynuclear mixed-valent hybrid films of zinc oxide/zinchexacyanoferrate and ruthenium oxide hexacyanoferrate (ZnO/ZnHCF-RuOHCF) have been deposited on electrode surfaces from H{sub 2}SO{sub 4} solution containing Zn(NO{sub 3}){sub 2}, RuCl{sub 3} and K{sub 3}[Fe(CN){sub 6}] by potentiodynamic cycling method. Simultaneous cyclic voltammetry and electrochemical quartz crystal microbalance (EQCM) measurements demonstrate the steady growth of hybrid film. Surface morphology of hybrid film was investigated using scanning electron microscopy (SEM). Energy dispersive spectrometer (EDS) data confirm existence of zinc oxide and ruthenium oxide hexacyanoferrate (RuOHCF) in the hybrid film. The effect of type of monovalent cations on the redox behavior of hybrid film was investigated. In pure supporting electrolyte, electrochemical responses of Ru{sup II/III} redox transition occurring at negative potential region resemble with that of a surface immobilized redox couple. The electrocatalytic activity of ZnO/ZnHCF-RuOHCF hybrid film was investigated towards oxidation of epinephrine, dopamine and L-cysteine, and reduction of S{sub 2}O{sub 8}{sup 2-} and SO{sub 5}{sup 2-} as well as IO{sub 3}{sup -} using cyclic voltammetry and rotating ring disc electrode (RRDE) techniques.

  15. Hybrid phototransistors based on bulk heterojunction films of poly(3-hexylthiophene) and zinc oxide nanoparticle.

    Science.gov (United States)

    Nam, Sungho; Seo, Jooyeok; Park, Soohyeong; Lee, Sooyong; Jeong, Jaehoon; Lee, Hyena; Kim, Hwajeong; Kim, Youngkyoo

    2013-02-01

    Hybrid phototransistors (HPTRs) were fabricated on glass substrates using organic/inorganic hybrid bulk heterojunction films of p-type poly(3-hexylthiophene) (P3HT) and n-type zinc oxide nanoparticles (ZnO(NP)). The content of ZnO(NP) was varied up to 50 wt % in order to understand the composition effect of ZnO(NP) on the performance of HPTRs. The morphology and nanostructure of the P3HT:ZnO(NP) films was examined by employing high resolution electron microscopes and synchrotron radiation grazing angle X-ray diffraction system. The incident light intensity (P(IN)) was varied up to 43.6 μW/cm², whereas three major wavelengths (525 nm, 555 nm, 605 nm) corresponded to the optical absorption of P3HT were applied. Results showed that the present HPTRs showed typical p-type transistor performance even though the n-type ZnO(NP) content increased up to 50 wt %. The highest transistor performance was obtained at 50 wt %, whereas the lowest performance was measured at 23 wt % because of the immature bulk heterojunction morphology. The drain current (I(D)) was proportionally increased with P(IN) due to the photocurrent generation in addition to the field-effect current. The highest apparent and corrected responsivities (R(A) = 4.7 A/W and R(C) = 2.07 A/W) were achieved for the HPTR with the P3HT:ZnO(NP) film (50 wt % ZnO(NP)) at P(IN) = 0.27 μW/cm² (555 nm).

  16. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    KAUST Repository

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, Husam N.

    2012-01-01

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility

  17. Language extraction from zinc sulfide

    Science.gov (United States)

    Varn, Dowman Parks

    2001-09-01

    Recent advances in the analysis of one-dimensional temporal and spacial series allow for detailed characterization of disorder and computation in physical systems. One such system that has defied theoretical understanding since its discovery in 1912 is polytypism. Polytypes are layered compounds, exhibiting crystallinity in two dimensions, yet having complicated stacking sequences in the third direction. They can show both ordered and disordered sequences, sometimes each in the same specimen. We demonstrate a method for extracting two-layer correlation information from ZnS diffraction patterns and employ a novel technique for epsilon-machine reconstruction. We solve a long-standing problem---that of determining structural information for disordered materials from their diffraction patterns---for this special class of disorder. Our solution offers the most complete possible statistical description of the disorder. Furthermore, from our reconstructed epsilon-machines we find the effective range of the interlayer interaction in these materials, as well as the configurational energy of both ordered and disordered specimens. Finally, we can determine the 'language' (in terms of the Chomsky Hierarchy) these small rocks speak, and we find that regular languages are sufficient to describe them.

  18. Highly transparent and conducting boron doped zinc oxide films for window of Dye Sensitized Solar Cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Vinod, E-mail: vinod.phy@gmail.com [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Department of Physics, Gurukula Kangri University, Haridwar 249404 (India); Singh, R.G. [Department of Electronic Science, Maharaja Agrasen College University of Delhi, New Delhi 110096 (India); Singh, Fouran [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Purohit, L.P. [Department of Physics, Gurukula Kangri University, Haridwar 249404 (India)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer Synthesis of Boron doped ZnO (ZnO:B) films. Black-Right-Pointing-Pointer Minimum of resistivity is observed to be 7.9 Multiplication-Sign 10{sup -4} {Omega} cm. Black-Right-Pointing-Pointer Maximum transmittance {approx}91% for 450 Degree-Sign C annealed films. Black-Right-Pointing-Pointer Applicable for window materials in Dye Sensitized Solar Cell. - Abstract: Highly transparent and conducting boron doped zinc oxide (ZnO:B) films grown by sol-gel method are reported. The annealing temperature is varied from 350 to 550 Degree-Sign C and doping concentration of boron is kept fixed for 0.6 at.% for all the films. At low temperature the stress in the films is compressive, which becomes tensile for the films annealed at higher temperature. A minimum resistivity of 7.9 Multiplication-Sign 10{sup -4} {Omega} cm and maximum transmittance of {approx}91% are observed for the film annealed at 450 Degree-Sign C. This could be attributed to minimum stress of films, which is further evident by the evolution of A{sub 1} and defect related Raman modes without any shifting in its position. Such kind of highly transparent and conducting ZnO:B thin film could be used as window material in Dye Sensitized Solar Cell (DSSC).

  19. Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

    Science.gov (United States)

    Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

    2018-05-01

    The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

  20. The Effect of UV Aging on Antimicrobial and Mechanical Properties of PLA Films with Incorporated Zinc Oxide Nanoparticles.

    Science.gov (United States)

    Mizielińska, Małgorzata; Kowalska, Urszula; Jarosz, Michał; Sumińska, Patrycja; Landercy, Nicolas; Duquesne, Emmanuel

    2018-04-18

    The aim of this study was to examine the influence of accelerated UV-aging on the activity against chosen microorganisms and the mechanical properties of poly-lactic acid (PLA) films enhanced with ZnO nanoparticles. The pure PLA films and tri-layered PLAZnO1%/PLA/PLAZnO1% films of 150 µm thickness were extruded. The samples were treated with UV-A and Q-SUN irradiation. After irradiation the antimicrobial activity and mechanical properties of the films were analyzed. The results of the study demonstrated that PLA films did not inhibit the growth of Staphylococcus aureus , Bacillus cereus , Escherichia coli , Bacillus atrophaeus , and Candida albicans cells. PLA films with incorporated zinc oxide nanoparticles decreased the number of analyzed microorganisms. Accelerated UV aging had no negative effect on the activity of the film containing nano-ZnO against Gram-positive bacteria, but it influenced the activity against Gram-negative cells and C. albicans . Q-SUN irradiation decreased the antimicrobial effect of films with incorporated nanoparticles against B. cereus . UV-A and Q-UV irradiation did not influence the mechanical properties of PLA films containing incorporated ZnO nanoparticles.

  1. Ag-Cu nanoalloyed film as a high-performance cathode electrocatalytic material for zinc-air battery

    Science.gov (United States)

    Lei, Yimin; Chen, Fuyi; Jin, Yachao; Liu, Zongwen

    2015-04-01

    A novel Ag50Cu50 film electrocatalyst for oxygen reduction reaction (ORR) was prepared by pulsed laser deposition (PLD) method. The electrocatalyst actually is Ag-Cu alloyed nanoparticles embedded in amorphous Cu film, based on transmission electron microscopy (TEM) characterization. The rotating disk electrode (RDE) measurements provide evidence that the ORR proceed via a four-electron pathway on the electrocatalysts in alkaline solution. And it is much more efficient than pure Ag catalyst. The catalytic layer has maximum power density of 67 mW cm-2 and an acceptable cell voltage at 0.863 V when current densities increased up to 100 mA cm-2 in the Ag50Cu50-based primary zinc-air battery. The resulting rechargeable zinc-air battery exhibits low charge-discharge voltage polarization of 1.1 V at 20 mAcm-2 and high durability over 100 cycles in natural air.

  2. Indium–gallium–zinc oxide thin film transistors with a hybrid-channel structure for defect suppression and mobility improvement

    International Nuclear Information System (INIS)

    Lin, Huang-Kai; Su, Liang-Yu; Hung, Chia-Chin; Huang, JianJang

    2013-01-01

    In this work, we explore an indium gallium zinc oxide (IGZO) thin film transistor structure with a vacuum annealed IGZO thin film inserted between the dielectric and typical channel layers. The device demonstrates a better subthreshold swing and field-effect mobility due to the suppression of defects in the channel and the channel/dielectric interface. The hybrid channel structure also exhibits the flexibility of adjusting the threshold voltage. The superior carrier mobility was then verified from the transient response of the inverter circuit constructed by the devices. - Highlights: • Additional in-situ annealed In–Ga–ZnO film was inserted in thin film transistor (TFT). • Traps are suppressed and field effect mobility is improved in the TFT. • An inverter with the device structure has a better transient response

  3. High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

    KAUST Repository

    Nayak, Pradipta K.

    2012-05-16

    Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.

  4. DC sputter deposition of amorphous indium-gallium-zinc-oxide (a-IGZO) films with H2O introduction

    International Nuclear Information System (INIS)

    Aoi, Takafumi; Oka, Nobuto; Sato, Yasushi; Hayashi, Ryo; Kumomi, Hideya; Shigesato, Yuzo

    2010-01-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) films were deposited by dc magnetron sputtering with H 2 O introduction and how the H 2 O partial pressure (P H 2 O ) during the deposition affects the electrical properties of the films was investigated in detail. Resistivity of the a-IGZO films increased dramatically to over 2 x 10 5 Ωcm with increasing P H 2 O to 2.7 x 10 -2 Pa while the hydrogen concentration in the films increased to 2.0 x 10 21 cm -3 . TFTs using a-IGZO channels deposited under P H 2 O at 1.6-8.6 x 10 -2 Pa exhibited a field-effect mobility of 1.4-3.0 cm 2 /Vs, subthreshold swing of 1.0-1.6 V/decade and on-off current ratio of 3.9 x 10 7 -1.0 x 10 8 .

  5. Indium–gallium–zinc oxide thin film transistors with a hybrid-channel structure for defect suppression and mobility improvement

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Huang-Kai; Su, Liang-Yu; Hung, Chia-Chin [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei 106, Taiwan (China); Huang, JianJang, E-mail: jjhuang@cc.ee.ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei 106, Taiwan (China); Department of Electrical Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei 106, Taiwan (China)

    2013-07-01

    In this work, we explore an indium gallium zinc oxide (IGZO) thin film transistor structure with a vacuum annealed IGZO thin film inserted between the dielectric and typical channel layers. The device demonstrates a better subthreshold swing and field-effect mobility due to the suppression of defects in the channel and the channel/dielectric interface. The hybrid channel structure also exhibits the flexibility of adjusting the threshold voltage. The superior carrier mobility was then verified from the transient response of the inverter circuit constructed by the devices. - Highlights: • Additional in-situ annealed In–Ga–ZnO film was inserted in thin film transistor (TFT). • Traps are suppressed and field effect mobility is improved in the TFT. • An inverter with the device structure has a better transient response.

  6. Second order nonlinear optical properties of zinc oxide films deposited by low temperature dual ion beam sputtering

    International Nuclear Information System (INIS)

    Larciprete, M.C.; Passeri, D.; Michelotti, F.; Paoloni, S.; Sibilia, C.; Bertolotti, M.; Belardini, A.; Sarto, F.; Somma, F.; Lo Mastro, S.

    2005-01-01

    We investigated second order optical nonlinearity of zinc oxide thin films, grown on glass substrates by the dual ion beam sputtering technique under different deposition conditions. Linear optical characterization of the films was carried out by spectrophotometric optical transmittance and reflectance measurements, giving the complex refractive index dispersion. Resistivity of the films was determined using the four-point probe sheet resistance method. Second harmonic generation measurements were performed by means of the Maker fringes technique where the fundamental beam was originated by nanosecond laser at λ=1064 nm. We found a relatively high nonlinear optical response, and evidence of a dependence of the nonlinear coefficient on the deposition parameters for each sample. Moreover, the crystalline properties of the films were investigated by x-ray diffraction measurements and correlation with second order nonlinearity were analyzed. Finally, we investigated the influence of the oxygen flow rate during the deposition process on both the second order nonlinearity and the structural properties of the samples

  7. Use of biogenic sulfide for ZnS precipitation

    NARCIS (Netherlands)

    Esposito, G.; Veeken, A.; Weijma, J.; Lens, P.N.L.

    2006-01-01

    A 600 ml continuously stirred tank reactor was used to assess the performance of a zinc sulfide precipitation process using a biogenic sulfide solution (the effluent of a sulfate-reducing bioreactor) as sulfide source. In all experiments, a proportional-integral (PI) control algorithm was used to

  8. Solution processed zinc oxide nanopyramid/silver nanowire transparent network films with highly tunable light scattering properties

    KAUST Repository

    Mehra, Saahil

    2013-01-01

    Metal nanowire transparent networks are promising replacements to indium tin oxide (ITO) transparent electrodes for optoelectronic devices. While the transparency and sheet resistance are key metrics for transparent electrode performance, independent control of the film light scattering properties is important to developing multifunctional electrodes for improved photovoltaic absorption. Here we show that controlled incorporation of ZnO nanopyramids into a metal nanowire network film affords independent, highly tunable control of the scattering properties (haze) with minimal effects on the transparency and sheet resistance. Varying the zinc oxide/silver nanostructure ratios prior to spray deposition results in sheet resistances, transmission (600 nm), and haze (600 nm) of 6-30 Ω □-1, 68-86%, and 34-66%, respectively. Incorporation of zinc oxide nanopyramid scattering agents into the conducting nanowire mesh has a negligible effect on mesh connectivity, providing a straightforward method of controlling electrode scattering properties. The decoupling of the film scattering power and electrical characteristics makes these films promising candidates for highly scattering transparent electrodes in optoelectronic devices and can be generalized to other metal nanowire films as well as carbon nanotube transparent electrodes. © 2013 The Royal Society of Chemistry.

  9. High quality aluminium doped zinc oxide target synthesis from nanoparticulate powder and characterisation of sputtered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Isherwood, P.J.M., E-mail: P.J.M.Isherwood@lboro.ac.uk [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Neves, N. [Innovnano, S. A., Rua Coimbra Inovação Parque, IParque Lote 13, 3040-570 Antanhol, Coimbra (Portugal); Bowers, J.W. [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Newbatt, P. [Innovnano, S. A., Rua Coimbra Inovação Parque, IParque Lote 13, 3040-570 Antanhol, Coimbra (Portugal); Walls, J.M. [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom)

    2014-09-01

    Nanoparticulate aluminium-doped zinc oxide powder was synthesised through detonation and subsequent rapid quenching of metallic precursors. This technique allows for precise compositional control and rapid nanoparticle production. The resulting powder was used to form sputter targets, which were used to deposit thin films by radio frequency sputtering. These films show excellent sheet resistance and transmission values for a wide range of deposition temperatures. Crystal structure analysis shows that crystals in the target have a random orientation, whereas the crystals in the films grow perpendicular to the substrate surface and propagate preferentially along the (002) axis. Higher temperature deposition reduces crystal quality with a corresponding decrease in refractive index and an increase in sheet resistance. Films deposited between room temperature and 300 °C were found to have sheet resistances equivalent to or better than indium tin oxide films for a given average transmission value. - Highlights: • Nanoparticulate AZO powder was used to produce sputter targets. • The powder synthesis technique allows for precise compositional control. • Sputtered films show excellent optical, electronic and structural properties. • High temperature films show reduced electrical and structural quality. • For a given transmission, films show equivalent sheet resistances to ITO.

  10. Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

    Directory of Open Access Journals (Sweden)

    Hyun-Woo Lee

    2018-01-01

    Full Text Available We investigated the effects of vacuum rapid thermal annealing (RTA on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

  11. Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

    Science.gov (United States)

    Lee, Hyun-Woo; Cho, Won-Ju

    2018-01-01

    We investigated the effects of vacuum rapid thermal annealing (RTA) on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs) with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

  12. Influence of stress on the structural and dielectric properties of rf magnetron sputtered zinc oxide thin film

    Science.gov (United States)

    Menon, Rashmi; Sreenivas, K.; Gupta, Vinay

    2008-05-01

    Highly c axis oriented zinc oxide (ZnO) thin films have been prepared on 1737 Corning glass substrate by planar rf magnetron sputtering under varying pressure (10-50mTorr) and different oxygen percentage (40%-100%) in reactive gas mixtures. The as-grown ZnO thin films were found to have stress over a wide range from -6×1010to-9×107dynes/cm2. The presence of stress depends strongly on processing conditions, and films become almost stress free under a unique combination of sputtering pressure and reactive gas composition. The studies show a correlation of stress with structural and electrical properties of the ZnO thin film. The stressed films possess high electrical conductivity and exhibits strong dielectric dispersion over a wide frequency (1kHz-1MHz). The dielectric constant ɛ'(ω) of stress free ZnO film was almost frequency independent and was close to the bulk value. The measured value of dc conductivity, σdc(ω) and ac conductivity σac(ω) of stress free ZnO film was 1.3×10-9 and 6.8×10-5Ω-1cm-1, respectively. The observed variation in the structural and electrical properties of ZnO thin film with stress has been analyzed in the light of growth kinetics.

  13. Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors

    Science.gov (United States)

    Song, Yang; Katsman, Alexander; Butcher, Amy L.; Paine, David C.; Zaslavsky, Alexander

    2017-10-01

    Thin film transistors (TFTs) based on transparent oxide semiconductors, such as indium zinc oxide (IZO), are of interest due to their improved characteristics compared to traditional a-Si TFTs. Previously, we reported on top-gated IZO TFTs with an in-situ formed HfO2 gate insulator and IZO active channel, showing high performance: on/off ratio of ∼107, threshold voltage VT near zero, extracted low-field mobility μ0 = 95 cm2/V·s, and near-perfect subthreshold slope at 62 mV/decade. Since device stability is essential for technological applications, in this paper we report on the temporal and voltage stress stability of IZO TFTs. Our devices exhibit a small negative VT shift as they age, consistent with an increasing carrier density resulting from an increasing oxygen vacancy concentration in the channel. Under gate bias stress, freshly annealed TFTs show a negative VT shift during negative VG gate bias stress, while aged (>1 week) TFTs show a positive VT shift during negative VG stress. This indicates two competing mechanisms, which we identify as the field-enhanced generation of oxygen vacancies and the field-assisted migration of oxygen vacancies, respectively. A simplified kinetic model of the vacancy concentration evolution in the IZO channel under electrical stress is provided.

  14. X-ray photoelectron spectroscopic study of catalyst based zinc oxide thin films

    International Nuclear Information System (INIS)

    Shinde, S.S.; Rajpure, K.Y.

    2011-01-01

    Research highlights: → The two step approach for quantitative XPS analysis of ZnO films has been reported. → Surface composition and chemical states of F and In/ZnO catalysts have been studied. → The chemical shifts and Auger parameter have been investigated. - Abstract: X-ray photoelectron spectroscopy (XPS) is a powerful tool for surface and interface analysis, providing an elemental composition of surfaces and the local chemical environment of adsorbed species. The surface composition and chemical states of the F/ZnO and In/ZnO catalysts deposited using spray technique have been studied by high resolution and high sensitivity X-ray photoelectron spectroscopy. A hybrid multiline method is proposed for quantitative XPS analysis that combines the first principles approach with the experimental determination of overall response function. The chemical shifts of XPS core lines for Zn (2P 3/2 , F 1s and In 3d) and Auger parameter for zinc (β Zn = 2012.6, 2011.48 eV for F/ZnO and In/ZnO, respectively) have been calculated. The results have been used to determine the bond iconicity (0.55).

  15. Properties of RF sputtered zinc oxide based thin films made from different targets

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, M A; Herrero, J; Gutierrez, M T [Instituto de Energias Renovables, Madrid (Spain)

    1994-01-01

    The effect of deposition parameters on optoelectronic and structural properties of ZnO based thin films prepared by RF magnetron sputtering have been studied. Different targets (pure Zn, ZnO, Zn-Al (98/2 at%), ZnO-Al (98/2 at%), and ZnO-Al{sub 2}O{sub 3} (98/2 wt%)) have been investigated to compare resulting samples and establish the best target composition. From reactive sputtering, using a Zn-Al target, transparent conductive zinc oxide has been obtained at 380{sup o}C with E{sub g}=3.25-3.35 eV and {rho}=4.8x10{sup -4} {Omega}cm. Reduction of substrate temperature at 200{sup o}C has been possible by nonreactive sputtering from ZnO-Al and ZnO-Al{sub 2}O{sub 3} targets. The values of the energy gap and resistivity under these conditions are 3.30-3.35 eV and 1x10{sup -3} {Omega}cm respectively

  16. Influence of iodine on the electrical and photoelectrical properties of zinc phthalocyanine thin film devices

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, G.D. [Jodhpur Univ. (India). Dept. of Physics; Sangodkar, S.G. [Jodhpur Univ. (India). Dept. of Physics; Roy, M.S. [Camouflage Division, Defence Laboratory, Jodhpur (Raj.) (India)

    1996-11-01

    The electrical and photovoltaic properties of the zinc phthalocyanine (ZnPc) and I{sub 2} doped ZnPc thin films, sandwiched between indium tin oxide (ITO) and Al electrodes, were investigated. Doping with iodine brings adequate changes in the characteristics of the device. The devices constitute a metal-insulator-semiconductor (MIS) structure, in which depletion layer is formed in ZnPc, near Al-Al{sub 2}O{sub 3}/ZnPc. The depletion layer width and potential barrier height decrease with I{sub 2} doping. The charge transport phenomenon at higher voltage range appears to be space charge limited conduction (SCLC), in the presence of the discrete trapping level. The position of Fermi level shifts toward the valence band edge, which indicates that I{sub 2} doping increases the P-type conductivity. Various electrical and photovoltaic parameters were determined from the J-V and C-V analysis. The influence of the I{sub 2} doping has been discussed in detail. (orig.)

  17. MOCVD Growth and Characterization of n-type Zinc Oxide Thin Films

    Science.gov (United States)

    Ben-Yaacov, Tammy

    In the past decade, there has been widespread effort in the development of zinc oxide as a II-V1 semiconductor material. ZnO has potential advantages in optoelectronip device applications due to its unique electrical and optical properties. What stands out among these properties is its wide direct bandgap of 3.37 eV and its high electrical conductivity and transparency in the visible and near-UV regions of the spectrum. ZnO can be grown heteroepitaxially on GaN under near lattice-matched conditions and homoepitaxially as well, as high-quality bulk ZnO substrates are commercially available. This dissertation focuses on the development of the growth of high-quality, single crystal n-type ZnO films, control of n-type conductivity, as well as its application as a transparent contact material in GaN-based devices. The first part of this dissertation is an extensive heteroepitaxial and homoepitaxial growth study presenting the properties of ZnO(0001) layers grown on GaN(0001) templates and ZnO(0001) substrates. We show that deposition on GaN requires a two-step growth technique involving the growth of a low temperature nucleation layer before growing a high temperature epitaxial layer in order to obtain smooth ZnO films with excellent crystal quality and step-flow surface morphology. We obtained homoepitaxial ZnO(0001) films of structural quality and surface morphology that is comparable to the as-received substrates, and showed that a high growth temperature (≥1000°C) is needed in order to achieve step-flow growth mode. We performed n-type doping experiments, and established the conditions for which Indium effectively controls the n-type conductivity of ZnO films grown on GaN(0001) templates. A peak carrier concentration of 3.22x 10 19cm-3 and minimum sheet resistance of 97 O/square was achieved, while simultaneously maintaining good morphology and crystal quality. Finally, we present In-doped ZnO films implemented as p-contacts for GaN-based solar cells and LEDs

  18. Effect of annealing on refractive indices of radio-frequency magnetron sputtered waveguiding zinc oxide films on glass

    International Nuclear Information System (INIS)

    Mehan, Navina; Gupta, Vinay; Sreenivas, Kondepudy; Mansingh, Abhai

    2004-01-01

    The effects of annealing and gas composition on the refractive indices of zinc oxide films were studied in light of the structural properties. ZnO films (1 μm) were deposited by rf magnetron sputtering in different oxygen:argon mixtures on glass and annealed at 380 deg. C in air, at different times. Waveguide modes were excited in the films by prism coupling using a He-Ne laser. The estimated values of the extraordinary and ordinary refractive indices of the films, which were close to the corresponding bulk values (n e =2.006, n o =1.990), initially decreased with annealing time and later increased before becoming constant with further annealing. The variation in refractive indices was explained on the basis of contribution from both packing density p and lattice constant c of the films. The initial decrease in refractive indices was attributed to the observed lattice contraction, and the latter increase was explained in terms of the increase in packing density (p) of the films on annealing. A relation is proposed to estimate the refractive indices of films, which have the lattice constant c different from the bulk value

  19. Effect of thermal processing on silver thin films of varying thickness deposited on zinc oxide and indium tin oxide

    International Nuclear Information System (INIS)

    Sivaramakrishnan, K.; Ngo, A. T.; Alford, T. L.; Iyer, S.

    2009-01-01

    Silver films of varying thicknesses (25, 45, and 60 nm) were deposited on indium tin oxide (ITO) on silicon and zinc oxide (ZnO) on silicon. The films were annealed in vacuum for 1 h at different temperatures (300-650 deg. C). Four-point-probe measurements were used to determine the resistivity of the films. All films showed an abrupt change in resistivity beyond an onset temperature that varied with thickness. Rutherford backscattering spectrometry measurements revealed agglomeration of the Ag films upon annealing as being responsible for the resistivity change. X-ray pole figure analysis determined that the annealed films took on a preferential texturing; however, the degree of texturing was significantly higher in Ag/ZnO/Si than in Ag/ITO/Si samples. This observation was accounted for by interface energy minimization. Atomic force microscopy (AFM) measurements revealed an increasing surface roughness of the annealed films with temperature. The resistivity behavior was explained by the counterbalancing effects of increasing crystallinity and surface roughness. Average surface roughness obtained from the AFM measurements were also used to model the agglomeration of Ag based on Ostwald ripening theory

  20. Colorful and transparent poly(vinyl alcohol) composite films filled with layered zinc hydroxide salts, intercalated with anionic orange azo dyes (methyl orange and orange II)

    International Nuclear Information System (INIS)

    Neves da Silva, Marlon Luiz; Marangoni, Rafael; Cursino, Ana Cristina Trindade; Schreiner, Wido Herwig; Wypych, Fernando

    2012-01-01

    Highlights: ► Zinc hydroxide salts were successfully intercalated with anionic orange azo dyes. ► The anionic dye was co-intercalated with hydrated chloride anions. ► The orange materials were used as fillers for poly(vinyl alcohol). ► Transparent, homogeneous, colorful PVA films were obtained by wet casting. ► Some composites stored at lower humidity exhibited improved mechanical properties. - Abstract: Layered zinc hydroxide salts (zinc LHS) were intercalated with anionic orange azo dyes, namely methyl orange (MO) and orange II (OII), and co-intercalated with hydrated chloride anions. After characterization by X-ray diffraction (XRD), thermal analysis (TGA/DTA), Fourier transform infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS), the materials were used as fillers for poly(vinyl alcohol) (PVA). Colorful transparent films were obtained by wet casting, revealing good dispersion of the material into the polymer. In the case of zinc LHS/OII, PVA was intercalated between the zinc LHS layers. Evaluation of the mechanical properties of the PVA composite films revealed that the layered colorful materials were able to increase the mechanical properties of the PVA films only when the films were stored under lower relative humidity. As expected, films with higher water content displayed reduced tensile strength and modulus because of the plasticizing effect of water. As for the films stored at 43% relative humidity, more pronounced improvement of modulus was observed for 1 and 4% zinc LHS/OII, and enhanced tensile strength was achieved for 0.5 and 1% zinc LHS/OII. This effect can be attributed to better dispersion of the layered filler and its better adhesion to the PVA matrix.

  1. Transparent conducting properties of Ni doped zinc oxide thin films prepared by a facile spray pyrolysis technique using perfume atomizer

    Energy Technology Data Exchange (ETDEWEB)

    Bouaoud, A.; Rmili, A.; Ouachtari, F.; Louardi, A.; Chtouki, T. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Elidrissi, B., E-mail: e.bachir@mailcity.com [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Erguig, H. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Ecole Nationale des Sciences Appliquees de Kenitra (ENSAK) (Morocco)

    2013-01-15

    Undoped and Ni doped zinc oxide (Ni-ZnO) thin films were prepared by a facile spray pyrolysis technique using perfume atomizer from aqueous solution of anhydrous zinc acetate (Zn(CH{sub 3}COOH){sub 2} and hexahydrated nickel chloride (NiCl{sub 2}{center_dot}6H{sub 2}O) as sources of zinc and nickel, respectively. The films were deposited onto the amorphous glass substrates kept at (450 Degree-Sign C). The effect of the [Ni]/[Zn] ratio on the structural, morphological, optical and electrical properties of Ni doped ZnO thin film was studied. It was found from X-ray diffraction (XRD) analysis that both the undoped and Ni doped ZnO films were crystallized in the hexagonal structure with a preferred orientation of the crystallites along the [002] direction perpendicular to the substrate. The scanning electron microscopy (SEM) images showed a relatively dense surface structure composed of crystallites in the spherical form whose average size decreases when the [Ni]/[Zn] ratio increases. The optical study showed that all the films were highly transparent. The optical transmittance in the visible region varied between 75 and 85%, depending on the dopant concentrations. The variation of the band gap versus the [Ni]/[Zn] ratio showed that the energy gap decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02 and then increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. The films obtained with the [Ni]/[Zn] ratio = 0.02 showed minimum resistivity of 2 Multiplication-Sign 10{sup -3} {Omega} cm at room temperature. -- Highlights: Black-Right-Pointing-Pointer The optical transmittance of Ni doped ZnO varies between 75 and 85%. Black-Right-Pointing-Pointer The energy gap of these films decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02. Black-Right-Pointing-Pointer The energy gap increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. Black-Right-Pointing-Pointer The films obtained with [Ni]/[Zn] ratio = 0.02 show minimum resistivity of 2

  2. Studies on phase transformation and molecular orientation in nanostructured zinc phthalocyanine thin films annealed at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Avijit; Biswas, Bipul; Majumder, Manisree; Sanyal, Manik Kumar; Mallik, Biswanath, E-mail: spbm@iacs.res.in

    2012-08-31

    Studies on the electronic and optical properties of thin films of organometallic compounds such as phthalocyanine are very important for the development of devices based on these compounds. The nucleation and grain growth mechanism play an important role for the final electronic as well as optoelectronic properties of the organic and organometallic thin films. The present article deals with the change in the film morphology, grain orientation of nanocrystallites and optical properties of zinc phthalocyanines (ZnPc) thin films as a function of the post deposition annealing temperature. The effect of annealing temperature on the optical and structural property of vacuum evaporated ZnPc thin films deposited at room temperature (30 Degree-Sign C) on quartz glass and Si(100) substrates has been investigated. The thin films have been characterized by the UV-vis optical absorption spectra, X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy. From the studies of UV-vis absorption spectra and XRD data, a metastable {alpha} to {beta}-phase transformation has been observed when the thin films were annealed at a temperature greater than about 250 Degree-Sign C. The FESEM images have shown the particlelike structure at room temperature and the structure became rodlike when the films were annealed at high temperatures. TEM image of ZnPc film dissolved in ethanol has shown spectacular rod-shaped crystallites. High resolution transmission electron microscopy image of a single nanorod has shown beautiful 'honey-comb' like structure. Particle size and root mean square roughness were calculated from AFM images. The changes in band gap energy with increase in annealing temperature have been evaluated. - Highlights: Black-Right-Pointing-Pointer Morphology and orientation of grains in zinc phthalocyanine (ZnPc) thin films. Black

  3. Fabrication of zinc indium oxide thin films and effect of post annealing on structural, chemical and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Vipin Kumar, E-mail: vipinjain7678@gmail.com [Institute of Engineering and Technology, JK Lakshmipat University, Jaipur 302026 (India); Kumar, Praveen [Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Srivastava, Subodh; Vijay, Y.K. [Thin film and Membrane Science Laboratory, University of Rajasthan, Jaipur 302004 (India)

    2012-07-25

    Highlights: Black-Right-Pointing-Pointer ZIO films have been prepared by flash evaporation. Black-Right-Pointing-Pointer Thermal stability of ZIO films. Black-Right-Pointing-Pointer Structural, optical, electrical and other properties have been studied. - Abstract: In the present study, zinc indium oxide (ZIO) thin films were deposited on glass substrate with varying concentration (ZnO:In{sub 2}O{sub 3} - 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash evaporation technique. These deposited ZIO films were annealed in vacuum to study the thermal stability and to see the effects on the structural, chemical and electrical properties. The XRD analysis indicates that crystallization of the ZIO films strongly depends on concentration of In{sub 2}O{sub 3} and post annealing where annealed films showed polycrystalline nature. The surface morphological study of the films using scanning electron microscopy (SEM) revealed the formation of nanostructured ZIO thin films. The surface composition and oxidation state were analyzed by X-ray photoelectron spectroscopy. XPS spectra shows that as the concentration of In{sub 2}O{sub 3} increases from 10 to 50 wt%, the surface composition ratio In/Zn and O/Zn increases for as-prepared and annealed ZIO films while the XPS valance band spectra manifest the electronic transitions. The electrical resistivity was found to be decreased while carrier concentration and Hall mobility increased for both types of films with increasing concentration of In{sub 2}O{sub 3}.

  4. Wrinkle-free graphene electrodes in zinc tin oxide thin-film transistors for large area applications

    Science.gov (United States)

    Lee, Se-Hee; Kim, Jae-Hee; Park, Byeong-Ju; Park, Jozeph; Kim, Hyun-Suk; Yoon, Soon-Gil

    2017-02-01

    Wrinkle-free graphene was used to form the source-drain electrodes in thin film transistors based on a zinc tin oxide (ZTO) semiconductor. A 10 nm thick titanium adhesion layer was applied prior to transferring a conductive graphene film on top of it by chemical detachment. The formation of an interlayer oxide between titanium and graphene allows the achievement of uniform surface roughness over the entire substrate area. The resulting devices were thermally treated in ambient air, and a substantial decrease in field effect mobility is observed with increasing annealing temperature. The increase in electrical resistivity of the graphene film at higher annealing temperatures may have some influence, however the growth of the oxide interlayer at the ZTO/Ti boundary is suggested to be most influential, thereby inducing relatively high contact resistance.

  5. Modulation of the electrical properties in amorphous indium-gallium zinc-oxide semiconductor films using hydrogen incorporation

    Science.gov (United States)

    Song, Aeran; Park, Hyun-Woo; Chung, Kwun-Bum; Rim, You Seung; Son, Kyoung Seok; Lim, Jun Hyung; Chu, Hye Yong

    2017-12-01

    The electrical properties of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin films were investigated after thermal annealing and plasma treatment under different gas conditions. The electrical resistivity of a-IGZO thin films post-treated in a hydrogen ambient were lower than those without treatment and those annealed in air, regardless of the methods used for both thermal annealing and plasma treatment. The electrical properties can be explained by the quantity of hydrogen incorporated into the samples and the changes in the electronic structure in terms of the chemical bonding states, the distribution of the near-conduction-band unoccupied states, and the band alignment. As a result, the carrier concentrations of the hydrogen treated a-IGZO thin films increased, while the mobility decreased, due to the increase in the oxygen vacancies from the occurrence of unoccupied states in both shallow and deep levels.

  6. Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature

    International Nuclear Information System (INIS)

    Yan, Y.; Zhang, X.-F.; Ding, Y.-T.

    2013-01-01

    Amorphous transparent conducting zinc-oxide stabilized indium oxide thin films, named amorphous indium zinc oxide (a-IZO), were deposited by direct current magnetron sputtering at ambient temperature on flexible polyethylene terephthalate substrates. It has been demonstrated that the electrical resistivity could attain as low as ∼ 5 × 10 −4 Ω cm, which was noticeably lower than amorphous indium tin oxide films prepared at the same condition, while the visible transmittance exceeded 84% with the refractive index of 1.85–2.00. In our experiments, introduction of oxygen gas appeared to be beneficial to the improvement of the transparency and electrical conductivity. Both free carrier absorption and indirect transition were observed and Burstein–Moss effect proved a-IZO to be a degenerated amorphous semiconductor. However, the linear relation between the optical band gap and the band tail width which usually observed in covalent amorphous semiconductor such as a-Si:H was not conserved. Besides, porosity could greatly determine the resistivity and optical constants for the thickness variation at this deposition condition. Furthermore, a broad photoluminescence peak around 510 nm was identified when more than 1.5 sccm oxygen was introduced. - Highlights: ► Highly conducting amorphous zinc-oxide stabilized indium oxide thin films were prepared. ► The films were fabricated on polyethylene terephthalate at ambient temperature. ► Introduction of oxygen can improve the transparency and electrical conductivity. ► The linear relation between optical band gap and band tail width was not conserved

  7. Controlling the electrical properties of ZnO films by forming zinc and oxide bridges by a plasma and electron-assisted process

    Directory of Open Access Journals (Sweden)

    Norihiro Shimoi

    2012-06-01

    Full Text Available A new method to produce electrically steady ZnO films without any heating process has been developed by using plasma and electron beams to facilitate bonding between the metallic component and the oxygen on coated ZnO films. Both plasma atmosphere and electron beams can function as sources of nonequilibrium bonding energy, forming bridges between the zinc present in the zinc complex and the oxygen in the ZnO particles to construct a zinc-oxide thin film. Our results confirm that it is possible to achieve low conductive characteristics by controlling the acceleration voltage of electrons used to irradiate the ZnO coating. The electrically steady films fabricated have various potential applications, being particularly well-suited to electrical devices on a plastic medium.

  8. Controlling the electrical properties of ZnO films by forming zinc and oxide bridges by a plasma and electron-assisted process

    Energy Technology Data Exchange (ETDEWEB)

    Shimoi, Norihiro; Tanaka, Yasumitsu [Graduate School of Environmental Studies, Tohoku University, 6-6-20 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Harada, Takamitsu [Sendai Technology Center, Consumer-Professional and Devices Group, Sony Corporation, 3-4-1 Sakuragi, Tagajo 985-0842 (Japan); Tanaka, Shun-ichiro [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2012-06-15

    A new method to produce electrically steady ZnO films without any heating process has been developed by using plasma and electron beams to facilitate bonding between the metallic component and the oxygen on coated ZnO films. Both plasma atmosphere and electron beams can function as sources of nonequilibrium bonding energy, forming bridges between the zinc present in the zinc complex and the oxygen in the ZnO particles to construct a zinc-oxide thin film. Our results confirm that it is possible to achieve low conductive characteristics by controlling the acceleration voltage of electrons used to irradiate the ZnO coating. The electrically steady films fabricated have various potential applications, being particularly well-suited to electrical devices on a plastic medium.

  9. Thin film transistor performance of amorphous indium–zinc oxide semiconductor thin film prepared by ultraviolet photoassisted sol–gel processing

    Science.gov (United States)

    Kodzasa, Takehito; Nobeshima, Taiki; Kuribara, Kazunori; Yoshida, Manabu

    2018-05-01

    We have fabricated an amorphous indium–zinc oxide (IZO, In/Zn = 3/1) semiconductor thin-film transistor (AOS-TFT) by the sol–gel technique using ultraviolet (UV) photoirradiation and post-treatment in high-pressure O2 at 200 °C. The obtained TFT showed a hole carrier mobility of 0.02 cm2 V‑1 s‑1 and an on/off current ratio of 106. UV photoirradiation leads to the decomposition of the organic agents and hydroxide group in the IZO gel film. Furthermore, the post-treatment annealing at a high O2 pressure of more than 0.6 MPa leads to the filling of the oxygen vacancies in a poor metal–oxygen network in the IZO film.

  10. Electrochemical deposition of molybdenum sulfide thin films on conductive plastic substrates as platinum-free flexible counter electrodes for dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Chao-Kuang; Hsieh, Chien-Kuo, E-mail: jack_hsieh@mail.mcut.edu.tw

    2015-06-01

    In this study, pulsed electrochemical deposition (pulsed ECD) was used to deposit molybdenum sulfide (MoS{sub x}) thin films on indium tin oxide/polyethylene naphthalate (ITO/PEN) substrates as flexible counter electrodes (CEs) for dye-sensitized solar cells (DSSCs). The surface morphologies and elemental distributions of the prepared MoS{sub x} thin films were examined using field-emission scanning electron microscope (FE-SEM) equipped with energy-dispersive X-ray spectroscopy. The chemical states and crystallinities of the prepared MoS{sub x} thin films were examined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. The optical transmission (T (%)) properties of the prepared MoS{sub x} samples were determined by ultraviolet–visible spectrophotometry. Cyclic voltammetry (CV) and Tafel-polarization measurements were performed to analyze the electrochemical properties and catalytic activities of the thin films for redox reactions. The FE-SEM results showed that the MoS{sub x} thin films were deposited uniformly on the ITO/PEN flexible substrates via the pulsed ECD method. The CV and Tafel-polarization curve measurements demonstrated that the deposited MoS{sub x} thin films exhibited excellent performances for the reduction of triiodide ions. The photoelectric conversion efficiency (PCE) of the DSSC produced with the pulsed ECD MoS{sub x} thin-film CE was examined by a solar simulator. In combination with a dye-sensitized TiO{sub 2} working electrode and an iodine-based electrolyte, the DSSC with the MoS{sub x} flexible CE showed a PCE of 4.39% under an illumination of AM 1.5 (100 mW cm{sup −2}). Thus, we report that the MoS{sub x} thin films are active catalysts for triiodide reduction. The MoS{sub x} thin films are prepared at room temperature and atmospheric pressure and in a simple and rapid manner. This is an important practical contribution to the production of flexible low-cost thin-film CEs based on plastic substrates. The MoS{sub x

  11. Enhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodes

    Science.gov (United States)

    Oh, Dohyun; Yun, Dong Yeol; Cho, Woon-Jo; Kim, Tae Whan

    2014-08-01

    Transparent indium-zinc-tin oxide (IZTO)-based thin-film transistors (TFTs) with IZTO/Ag/IZTO multilayer electrodes were fabricated on glass substrates using a tilted dual-target radio-frequency magnetron sputtering system. The IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes exhibited a high optical transmittance in a visible region. The threshold voltage, the mobility, and the on/off-current ratio of the TFTs with IZTO/Ag/IZTO multilayer electrodes were enhanced in comparison with those of the TFTs with ITO electrodes. The source/drain contact resistance of the IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes was smaller than that of the IZTO TFTs with ITO electrodes, resulting in enhancement of their electrical characteristics.

  12. Advantages of using amorphous indium zinc oxide films for window layer in Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Warasawa, Moe [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Kaijo, Akira [Idemitsu Kosan Co., Ltd., 1280 Kami-izumi, Sodegaura, 229-0293 (Japan); Sugiyama, Mutsumi, E-mail: mutsumi@rs.noda.tus.ac.jp [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan)

    2012-01-01

    The advantages of using indium zinc oxide (IZO) films instead of conventional Ga-doped zinc oxide (ZnO:Ga) films for Cu(In,Ga)Se{sub 2} (CIGS) solar cells are described. The electrical properties of IZO are independent of film thickness. IZO films have higher mobility (30-40 cm{sup 2}/Vs) and lower resistivity (4-5 Multiplication-Sign 10{sup -4} {Omega} cm) compared to ZnO:Ga films deposited without intentional heating, because the number of grain boundaries in amorphous IZO films is small. The properties of a CIGS solar cell using IZO at the window layer were better than those obtained using a conventional ZnO:Ga at the window layer; moreover, the properties tended to be independent of thickness. These results indicate that use of IZO as a transparent conducting oxide layer is expected to increase the efficiency of CIGS solar cells.

  13. Characterization of an Olive Flounder Bone Gelatin-Zinc Oxide Nanocomposite Film and Evaluation of Its Potential Application in Spinach Packaging.

    Science.gov (United States)

    Beak, Songee; Kim, Hyeri; Song, Kyung Bin

    2017-11-01

    Olive flounder bone gelatin (OBG) was used for a film base material in this study. In addition, zinc oxide nanoparticles (ZnO) were incorporated into the OBG film to prepare a nanocomposite film and to impart antimicrobial activity to it. The tensile strength of the OBG film increased by 6.62 MPa, and water vapor permeability and water solubility decreased by 0.93 × 10 -9 g/m s Pa and 13.79%, respectively, by the addition of ZnO to the OBG film. In particular, the OBG-ZnO film exhibited antimicrobial activity against Listeria monocytogenes. To investigate the applicability of the OBG-ZnO packaging film, fresh spinach was wrapped in this film and stored for a week. The results indicated that the OBG-ZnO film showed antimicrobial activity against L. monocytogenes inoculated on spinach without affecting the quality of spinach, such as vitamin C content and color. Thus, the OBG-ZnO nanocomposite film can be applied as an efficient antimicrobial food packaging material. As a base material of edible films, gelatin was extracted from olive flounder bone, which is fish processing by-product. Olive flounder bone gelatin (OBG) nanocomposite films were prepared with zinc oxide nanoparticles (ZnO). For an application to antimicrobial packaging, spinach was wrapped with the OBG-ZnO nanocomposite film. © 2017 Institute of Food Technologists®.

  14. Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

    International Nuclear Information System (INIS)

    Jiao Bao-Chen; Zhang Xiao-Dan; Wei Chang-Chun; Sun Jian; Ni Jian; Zhao Ying

    2011-01-01

    Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10 −3 Ω·cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58×10 −3 Ω·cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  15. Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films

    International Nuclear Information System (INIS)

    Yao, Jianke; Gong, Li; Xie, Lei; Zhang, Shengdong

    2013-01-01

    The electrical and optical properties of direct current and radio frequency (RF) sputtered amorphous indium gallium zinc oxide (a-IGZO) films are compared. It is found that the RF sputtered a-IGZO films have better stoichiometry (In:Ga:Zn:O = 1:1:1:2.5–3.0), lower electrical conductivity (σ < 8 S/cm), higher refractive index (n = 1.9–2.0) and larger band gap (E g = 3.02–3.29 eV), and show less shift of Fermi level (△ E F ∼ 0.26 eV) and increased concentration of electrons (△ N e ∼ 10 4 ) in the conduction band with the reduction concentration of oxygen vacancy (V O ). Although a-IGZO has intensively been studied for a semiconductor channel material of thin film transistors in next-generation flat panel displays, its fundamental material parameters have not been thoroughly reported. In this work, the work function (φ) of a-IGZO films is tested with the ultraviolet photoelectron spectroscopy. It is found that the φ of a-IGZO films is in the range of 4.0–5.0 eV depending on the V O . - Highlights: ► Amorphous InGaZnO 4 (a-IGZO) films were prepared with different sputtering modes. ► Electrical and optical properties of the different films were compared. ► Fermi level (△E F ) shift in a-IGZO films were tested by X-ray photoelectron spectroscopy. ► The relation of △E F with the properties of a-IGZO films were discussed. ► Work function was tested by ultraviolet photoelectron spectroscopy

  16. Morphological differences in transparent conductive indium-doped zinc oxide thin films deposited by ultrasonic spray pyrolysis

    International Nuclear Information System (INIS)

    Jongthammanurak, Samerkhae; Cheawkul, Tinnaphob; Witana, Maetapa

    2014-01-01

    In-doped ZnO thin films were deposited on glass substrates by an ultrasonic spray pyrolysis technique, using indium chloride (InCl 3 ) as a dopant and zinc acetate solution as a precursor. Increasing the [at.% In]/[at.% Zn] ratio changed the crystal orientations of thin films, from the (100) preferred orientation in the undoped, to the (101) and (001) preferred orientations in the In-doped ZnO thin films with 4 at.% and 6–8 at.%, respectively. Undoped ZnO thin film shows relatively smooth surface whereas In-doped ZnO thin films with 4 at.% and 6–8 at.% show surface features of pyramidal forms and hexagonal columns, respectively. X-ray diffraction patterns of the In-doped ZnO thin films with [at.% In]/[at.% Zn] ratios of 6–8% presented an additional peak located at 2-theta of 32.95°, which possibly suggested that a metastable Zn 7 In 2 O 10 phase was present with the ZnO phase. ZnO thin films doped with 2 at.% In resulted in a sheet resistance of ∼ 645 Ω/sq, the lowest value among thin films with [at.% In]/[at.% Zn] ratio in a range of 0–8%. The precursor molarity was changed between 0.05 M and 0.20 M at an [at.% In]/[at.% Zn] ratio of 2%. Increasing the precursor molarity in a range of 0.10 M–0.20 M resulted in In-doped ZnO thin films with the (100) preferred orientation. An In-doped ZnO thin film deposited by 0.20 M precursor showed a sheet resistance of 25 Ω/sq, and an optical transmission of 75% at 550 nm wavelength. The optical band gap estimated from the transmission result was 3.292 eV. - Highlights: • Indium-doped ZnO thin films were grown on glass using ultrasonic spray pyrolysis. • Thin films' orientations depend on In doping and Zn molarity of precursor solution. • Highly c-axis or a-axis orientations were found in the In-doped ZnO thin films. • In doping of 6–8 at.% may have resulted in ZnO and a metastable Zn 7 In 2 O 10 phases. • Increasing precursor molarity reduced sheet resistance of In-doped ZnO thin films

  17. Hydrothermal ore-forming processes in the light of studies in rock- buffered systems: I. Iron-copper-zinc-lead sulfide solubility relations

    Science.gov (United States)

    Hemley, J.J.; Cygan, G.L.; Fein, J.B.; Robinson, G.R.; d'Angelo, W. M.

    1992-01-01

    Experimental studies, using cold-seal and extraction vessel techniques, were conducted on Fe, Pb, Zn, and Cu sulfide solubilities in chloride soultions at temperatures from 300?? to 700??C and pressures from 0.5 to 2 kbars. The solutions were buffered in pH by quartz monzonite and the pure potassium feldspar-muscovite-quartz assemblage and in fS2-fO2 largely by the assemblage pyrite-pyrrhotite-magnetite. Solubilities increase with increasing temperature and total chloride, and decrease with increasing pressure. The effect of increasing chloride concentration on solubility reflects primarily a shift to lower pH via the silicate buffer reactions. Similarity in behaviour with respect to the temperature and pressure of Fe, Zn, and Pb sulfide solubilities points to similarity in chloride speciation, and the neutral species appear to be dominant in the high-temperature region. -from Authors

  18. Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

    International Nuclear Information System (INIS)

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki

    2015-01-01

    This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O 2 , H 2 O, and N 2 O as the reactive gases. Experimental results show that the electrical properties of the N 2 O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N 2 O introduction into the deposition process, where the field mobility reach to 30.8 cm 2 V –1 s –1 , which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT

  19. Comparison of the method of diffusive gels in thin films with conventional extraction techniques for evaluating zinc accumulation in plants and isopods

    Energy Technology Data Exchange (ETDEWEB)

    Koster, Marijke [National Institute of Public Health and the Environment, Laboratory for Ecological Risk Assessment, P.O. Box 1, 3720 BA Bilthoven (Netherlands); Open University Netherlands, Heerlen (Netherlands); Reijnders, Lucas [Open University Netherlands, Heerlen (Netherlands); Oost, Nathalie R. van [National Institute of Public Health and the Environment, Laboratory for Ecological Risk Assessment, P.O. Box 1, 3720 BA Bilthoven (Netherlands); Peijnenburg, Willie J.G.M. [National Institute of Public Health and the Environment, Laboratory for Ecological Risk Assessment, P.O. Box 1, 3720 BA Bilthoven (Netherlands)]. E-mail: wjgm.peijnenburg@rivm.nl

    2005-01-01

    The measurement of diffusive gels in thin films (DGT) has recently been developed to assess metal bioavailability in soils. The DGT-method is based on diffusion in a porous matrix. To test the predictive capabilities of the method with regard to metal bioavailability, a study was set up with 28 soils having a variety of textures and amounts of zinc salts added. Correlation and regression analyses were performed to compare DGT-extracted zinc levels to zinc concentrations obtained by extraction with 0.01 M CaCl{sub 2} and 0.43 M HNO{sub 3}, digestion with aqua regia and the zinc concentration in pore water. The amount of zinc extracted with CaCl{sub 2} correlated well with DGT-extracted zinc levels in all soils spiked with different amounts of ZnCl{sub 2}. A similar correlation was not found for zinc concentrations in soil samples collected in the field. Experiments were performed to compare zinc content in organisms and in soils. The organisms tested were plants (grass, lettuce and lupine) and the hard bodied soil dwelling isopod Oniscus asellus. Good correlations were found between zinc accumulation in grass and lettuce and the C{sub E} (effective concentration) measured by a DGT-device, CaCl{sub 2} extracted zinc and the zinc content in the pore water of all soils. The correlation with C{sub E} was not significant for lupine, neither for spiked soils, nor for field soils (p {<=} 0.001). Zinc levels in the isopods were not significantly related to any set of zinc measurements. From a synthesis of all results obtained it is concluded that the DGT-methodology does not have an additional value in predicting bioavailability of zinc in terrestrial ecosystems as compared to conventional extraction methods. - Capsule: The newly developed method of diffusive gels in Thin films (DGT) does not have an added value over conventional extraction techniques in predicting zinc uptake by plants and isopods.

  20. Boron-doped zinc oxide thin films for large-area solar cells grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Chen, X.L.; Xu, B.H.; Xue, J.M.; Zhao, Y.; Wei, C.C.; Sun, J.; Wang, Y.; Zhang, X.D.; Geng, X.H.

    2007-01-01

    Boron-doped zinc oxide (ZnO:B) films were grown by metal organic chemical vapor deposition using diethylzinc (DEZn), and H 2 O as reactant gases and diborane (B 2 H 6 ) as an n-type dopant gas. The structural, electrical and optical properties of ZnO films doped at different B 2 H 6 flow rates were investigated. X-ray diffraction spectra and scanning electron microscopy images indicate that boron-doping plays an important role on the microstructure of ZnO films, which induced textured morphology. With optimized conditions, low sheet resistance (∼ 30 Ω/□), high transparency (> 85% in the visible light and infrared range) and high mobility (17.8 cm 2 V -1 s -1 ) were obtained for 700-nm ZnO:B films deposited on 20 cm x 20 cm glass substrates at the temperature of 443 K. After long-term exposure in air, the ZnO:B films also showed a better electrical stability than the un-doped samples. With the application of ZnO:B/Al back contacts, the short circuit current density was effectively enhanced by about 3 mA/cm 2 for a small area a-Si:H cell and a high efficiency of 9.1% was obtained for a large-area (20 cm x 20 cm) a-Si solar module

  1. Optical and structural properties of zinc oxide films with different thicknesses prepared by successive ionic layer adsorption and reaction method

    Energy Technology Data Exchange (ETDEWEB)

    Taner, Ahmet, E-mail: ataner@anadolu.edu.tr [Institute of Science and Technology, Anadolu University, Eskisehir 26470 (Turkey); Kul, Metin; Turan, Evren; Aybek, A. Senol; Zor, Muhsin [Department of Physics, Anadolu University, Eskisehir 26470 (Turkey); Taskoeprue, Turan [Department of Physics, Anadolu University, Eskisehir 26470 (Turkey); Department of Physics, Cank Latin-Small-Letter-Dotless-I r Latin-Small-Letter-Dotless-I Karatekin University, Cank Latin-Small-Letter-Dotless-I r Latin-Small-Letter-Dotless-I 18100 (Turkey)

    2011-12-01

    In this work, zinc oxide semiconducting films belonging to the II-VI group have been produced by successive ionic layer adsorption and reaction (SILAR) method on glass substrates with 10, 15, 20 and 25 cycles at room temperature. Following the deposition, the samples were dried in air at 400 Degree-Sign C for 1 h. The films were characterized by X-ray diffraction, field emission scanning electron microscopy and optical absorption measurement techniques. The X-ray diffractions of the films showed that they are hexagonal in structure. The crystallite size of ZnO films varied between 34 and 38 nm accordingly with the number of SILAR cycles. The material has exhibited direct band gap transition with the band gap values lying in the range between 3.13 and 3.18 eV. The red shift is observed in the absorption edge as the cycles increased. Transmission of the films decreased from 65 to 40% with increasing the number of cycles.

  2. Optical and structural properties of zinc oxide films with different thicknesses prepared by successive ionic layer adsorption and reaction method

    International Nuclear Information System (INIS)

    Taner, Ahmet; Kul, Metin; Turan, Evren; Aybek, A. Şenol; Zor, Muhsin; Taşköprü, Turan

    2011-01-01

    In this work, zinc oxide semiconducting films belonging to the II-VI group have been produced by successive ionic layer adsorption and reaction (SILAR) method on glass substrates with 10, 15, 20 and 25 cycles at room temperature. Following the deposition, the samples were dried in air at 400 °C for 1 h. The films were characterized by X-ray diffraction, field emission scanning electron microscopy and optical absorption measurement techniques. The X-ray diffractions of the films showed that they are hexagonal in structure. The crystallite size of ZnO films varied between 34 and 38 nm accordingly with the number of SILAR cycles. The material has exhibited direct band gap transition with the band gap values lying in the range between 3.13 and 3.18 eV. The red shift is observed in the absorption edge as the cycles increased. Transmission of the films decreased from 65 to 40% with increasing the number of cycles.

  3. Selective metallization of amorphous-indium-gallium-zinc-oxide thin-film transistor by using helium plasma treatment

    Science.gov (United States)

    Jang, Hun; Lee, Su Jeong; Porte, Yoann; Myoung, Jae-Min

    2018-03-01

    In this study, the effects of helium (He) plasma treatment on amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been investigated. The He plasma treatment induced a dramatic decrease of the resistivity in a-IGZO thin films from 1.25 × 106 to 5.93 mΩ cm. After 5 min He plasma treatment, the a-IGZO films showed an increase in carrier concentration to 6.70 × 1019 cm-3 combined with a high hall mobility of 15.7 cm2 V-1 s-1. The conductivity improvement was linked to the formation of oxygen vacancies during the He plasma treatment, which was observed by x-ray photoelectron spectroscopy analysis. The a-IGZO films did not appear to be damaged on the surface following the plasma treatment and showed a high transmittance of about 88.3% at a wavelength of 550 nm. The He plasma-treated a-IGZO films were used as source/drain (S/D) electrodes in a-IGZO TFTs. The devices demonstrated promising characteristics, on pair with TFTs using Al electrodes, with a threshold voltage (V T) of -1.97 V, sub-threshold slope (SS) of 0.52 V/decade, saturation mobility (μ sat) of 8.75 cm2 V-1 s-1, and on/off current ratio (I on/I off) of 2.66 × 108.

  4. High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma

    International Nuclear Information System (INIS)

    Joo, Young-Hee; Kim, Chang-Il

    2015-01-01

    We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF 4 /Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700 W, a DC-bias voltage of − 150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF 4 /Ar(= 25:75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF 4 /Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. - Highlights: • IGZO thin film was etched by CF 4 /Ar plasma as a function of gas mixing ratio. • IGZO bonds were broken Ar + sputtering and then reacted with the C-F x radicals. • The physical sputtering is dominant in etch control compared with chemical etching

  5. Electroluminescence of zinc oxide thin-films prepared via polymeric precursor and via sol-gel methods

    International Nuclear Information System (INIS)

    Lima, S.A.M.; Cremona, M.; Davolos, M.R.; Legnani, C.; Quirino, W.G.

    2007-01-01

    Zinc oxide (ZnO) is an electroluminescent (EL) material that can emit light in different regions of electromagnetic spectrum when electrically excited. Since ZnO is chemically stable, inexpensive and environmentally friendly material, its EL property can be useful to construct solid-state lamps for illumination or as UV emitter. We present here two wet chemical methods to prepare ZnO thin-films: the Pechini method and the sol-gel method, with both methods resulting in crystalline and transparent films with transmittance >85% at 550 nm. These films were used to make thin-film electroluminescent devices (TFELD) using two different insulator layers: lithium fluoride (LiF) or silica (SiO 2 ). All the devices exhibit at least two wide emission bands in the visible range centered at 420 nm and at 380 nm attributed to the electronic defects in the ZnO optical band gap. Besides these two bands, the device using SiO 2 and ZnO film obtained via sol-gel exhibits an additional band in the UV range centered at 350 nm which can be attributed to excitonic emission. These emission bands of ZnO can transfer their energy when a proper dopant is present. For the devices produced the voltage-current characteristics were measured in a specific range of applied voltage

  6. New insight into the mechanism of cathodic electrodeposition of zinc oxide thin films onto vitreous carbon

    OpenAIRE

    Ait Ahmed , N.; Eyraud , M.; Hammache , H.; Vacandio , F.; Sam , S.; Gabouze , N.; Knauth , P.; Pelzer , K.; Djenizian , T.

    2014-01-01

    International audience; In this study, the mechanism of zinc oxide (ZnO) electrodeposition from aqueous zinc nitrate solution at 70°C was investigated on vitreous carbon and bulk zinc electrodes using cyclic voltammetry experiments. Mechanisms are presented for the ZnO formation: the first widely accepted route corresponds to ZnO precipitation from Zn 2+ and OH-produced by NO3-reduction; the second route, which is discussed in this article, is due to Zn 2+ reduction into metallic Zn followed ...

  7. Diagnostic study of the roughness surface effect of zirconium on the third-order nonlinear-optical properties of thin films based on zinc oxide nanomaterials

    Energy Technology Data Exchange (ETDEWEB)

    Bahedi, K., E-mail: bahedikhadija@yahoo.com [Laboratoire Optoelectronique et Physico-chimie des Materiaux Universite Ibn Tofail, Faculte des Sciences BP 133 Kenitra 14000, Maroc (Morocco); Addou, M.; El Jouad, M.; Sofiani, Z.; Alaoui Lamrani, M.; El Habbani, T.; Fellahi, N.; Bayoud, S.; Dghoughi, L. [Laboratoire Optoelectronique et Physico-chimie des Materiaux Universite Ibn Tofail, Faculte des Sciences BP 133 Kenitra 14000, Maroc (Morocco); Sahraoui, B.; Essaidi, Z. [Laboratoire POMA, UMR CNRS 6136, Universite d' Angers 2, Bd Lavoisier, 49045 France (France)

    2009-02-01

    Zinc oxide (ZnO) and zirconium doped zinc oxide (ZnO:Zr) thin films were deposited by reactive chemical pulverization spray pyrolysis technique on heated glass substrates at 500 deg. C using zinc and zirconium chlorides as precursors. Effects of zirconium doping agent and surface roughness on the nonlinear optical properties were investigated in detail using atomic force microscopy (AFM) and third harmonic generation (THG) technique. The best value of nonlinear optical susceptibility {chi}{sup (3)} was obtained from the doped films with less roughness. A strong third order nonlinear optical susceptibility {chi}{sup (3)} = 20.12 x 10{sup -12} (esu) of the studied films was found for the 3% doped sample.

  8. Zinc concentration effect on structural, optical and electrical properties of Cd{sub 1−x}Zn{sub x}Se thin films

    Energy Technology Data Exchange (ETDEWEB)

    Akaltun, Yunus [Department of Electrical and Electronic, Engineering Faculty, Erzincan University, Erzincan (Turkey); Yıldırım, M. Ali, E-mail: mayildirim@erzincan.edu.tr [Department of Physics, Science and Art Faculty, Erzincan University, Erzincan (Turkey); Ateş, Aytunç [Department of Material Engineering, Engineering and Natural Sciences Faculty, Yıldırım Beyazıt University, Ankara (Turkey); Yıldırım, Muhammet [Department of Physics, Science Faculty, Atatürk University, Erzurum (Turkey)

    2012-11-15

    Highlights: ► Cd{sub 1−x}Zn{sub x}Se thin films were deposited using SILAR method. ► The electron effective mass, refractive index, dielectric constant values were calculated by using the energy bandgap values as a function of the zinc concentration (x). ► The resistivity and activation energy changed as a function of the zinc concentration (x). -- Abstract: Cd{sub 1−x}Zn{sub x}Se thin films with different compositions (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) were deposited on glass substrates using successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. The zinc concentration (x) effect on the structural, morphological, optical and electrical properties of Cd{sub 1−x}Zn{sub x}Se thin films were investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibited polycrystalline nature and were covered well on glass substrates. The energy dispersive X-ray (EDAX) analysis confirmed nearly stoichiometric deposition of the films. The energy bandgap values were changed from 1.99 to 2.82 eV depending on the zinc concentration. Bowing parameter was calculated as 0.08 eV. The electron effective mass (m{sub e}*/m{sub o}), refractive index (n), optical static and high frequency dielectric constants (ε{sub o}, ε{sub ∞}) values were calculated by using the energy bandgap values as a function of the zinc concentration. The resistivity values of the films changed between 10{sup 5} and 10{sup 7} Ω cm with increasing zinc concentration at room temperature.

  9. Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering.

    Science.gov (United States)

    Hsu, Ming-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn; Wu, Wei-Ting; Li, Jyun-Yi

    2017-06-26

    Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of -0.9 V, mobility of 0.884 cm²/Vs, on-off ratio of 5.5 × 10⁵, and subthreshold swing of 0.41 V/dec.

  10. High Quality Zinc Oxide Thin films and Nanostructures Prepared by Pulsed Laser Deposition for Photodetectors

    KAUST Repository

    Flemban, Tahani H.

    2017-12-11

    Zinc oxide (ZnO) semiconductors have been utilized by many researchers, due to its unique properties beneficial for functional devices. In particular, gadolinium (Gd)–doped ZnO exhibits high ferromagnetic and electrical properties, which is attributed to defect/impurity bands mediated by Gd dopants. In this dissertation, I study the effects of Gd concentration, oxygen pressure using pulsed laser deposition (PLD), and thermal annealing on the optical and structural properties of undoped and Gd-doped ZnO films and nanostructures. Moreover, as the growth of practical ZnO nanostructures-based devices without catalyst, while presently challenging, is highly important for many applications. Thus, for the first time, a novel method is developed for growing well aligned ZnO nanorods (NRs) by optimizing PLD conditions using Gd-doped ZnO target without any catalyst in a single step. This study shows that, both the lattice orientation of the substrate and the Gd characteristics are significant in enhancing the NR growth. Our findings reveal that precise control of the NR density can be achieved by changing the oxygen partial pressure. Furthermore, due to the Gd incorporation, these NRs possess favorable electrical properties with a significant mobility of 177 cm2 (V.s)-1 compared to that reported in literature. Nonetheless significant challenges need to be overcome to achieve reproducible and stable p-type ZnO for commercial applications. Hence, several attempts based on n-type ZnO grown on foreign p-type substrates were made to achieve high-performance devices and overcome the issues arising when p-type doped ZnO is employed. Moreover, Growth of ZnO nanostructures on a foreign p-type substrates does not require a lattice-matched p-type substrate. Thus, for the first time, PLD conditions are improved to grow high quality ZnO nanotubes (NTs) with high optical, structural and electrical properties on a p-type Si (100) substrate without catalyst for high-performance devices. A

  11. Effect of substrate temperature on the properties of pyrolytically deposited nitrogen-doped zinc oxide thin films

    International Nuclear Information System (INIS)

    Golshahi, S.; Rozati, S.M.; Botelho do Rego, A.M.; Wang, J.; Elangovan, E.; Martins, R.; Fortunato, E.

    2013-01-01

    Highlights: ► Hall-effect measurement introduces the optimum temperature of 450 °C for fabricating p-type high quality ZnO films. ► X-ray photoelectron spectroscopy (XPS) proved the nitrogen presence at the surface of doped ZnO thin films at all substrate temperatures. ► Films prepared at lower substrate temperature (300 °C and 350 °C) own wider band gaps. ► Surface roughness strongly is affected by substrate temperature variations. - Abstract: The effect of substrate temperature (T s ) on the properties of pyrolytically deposited nitrogen (N) doped zinc oxide (ZnO) thin films was investigated. The T s was varied from 300 °C to 500 °C, with a step of 50 °C. The positive sign of Hall coefficient confirmed the p-type conductivity in the films deposited at 450 °C and 500 °C. X-ray diffraction studies confirmed the ZnO structure with a dominant peak from (1 0 0) crystal plane, irrespective of the variation in T s . The presence of N in the ZnO structure was evidenced through X-ray photoelectron spectroscopy (XPS) analysis. The obtained high N concentration reveals that the 450 °C is the optimal T s . Atomic force microscope (AFM) analysis showed that the surface roughness was increased with the increasing T s until 400 °C but then decreased. It is found that the transmittance of the deposited films is increased with the increasing T s . The optical band gap calculated from the absorption edge showed that the films deposited with T s of 300 °C and 350 °C possess higher values than those deposited at higher T s .

  12. Mechanical properties of amorphous indium–gallium–zinc oxide thin films on compliant substrates for flexible optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Mohammed, D.W., E-mail: DWM172@bham.ac.uk [University of Birmingham, School of Metallurgy and Materials, Edgbaston, Birmingham, B15 2TT (United Kingdom); Waddingham, R.; Flewitt, A.J. [University of Cambridge, Electrical Engineering Division, Department of Engineering, J J Thomson Avenue, Cambridge CB3 0FA,United Kingdom (United Kingdom); Sierros, K.A. [West Virginia University, Mechanical & Aerospace Engineering, Morgantown, WV 26506 (United States); Bowen, J. [Open University, Department of Engineering and Innovation, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Kukureka, S.N. [University of Birmingham, School of Metallurgy and Materials, Edgbaston, Birmingham, B15 2TT (United Kingdom)

    2015-11-02

    Amorphous indium–gallium–zinc-oxide (a-IGZO) thin films were deposited using RF magnetron sputtering on polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) flexible substrates and their mechanical flexibility investigated using uniaxial tensile and buckling tests coupled with in situ optical microscopy. The uniaxial fragmentation test demonstrated that the crack onset strain of the IGZO/PEN was ~ 2.9%, which is slightly higher than that of IGZO/PET. Also, uniaxial tensile crack density analysis suggests that the saturated crack spacing of the film is strongly dependent on the mechanical properties of the underlying polymer substrate. Buckling test results suggest that the crack onset strain (equal to ~ 1.2%, of the IGZO/polymer samples flexed in compression to ~ 5.7 mm concave radius of curvature) is higher than that of the samples flexed with the film being in tension (convex bending) regardless whether the substrate is PEN or PET. The saturated crack density of a-IGZO film under the compression buckling mode is smaller than that of the film under the tensile buckling mode. This could be attributed to the fact that the tensile stress encouraged this crack formation originating from surface defects in the coating. It could also be due to the buckling delamination of the thin coating from the substrate at a lower strain than that at which a crack initiates during flexing in compression. These results provide useful information on the mechanical reliability of a-IGZO films for the development of flexible electronics. - Highlights: • Mechanical flexibility of IGZO thin films investigated by uniaxial tensile and buckling tests • Uniaxial fragmentation gives crack onset strain for IGZO/PEN of 2.9% (higher than for IGZO/PET.) • Saturated crack spacing strongly dependent on mechanical properties of polymer substrate • Crack onset strain in concave bending higher than in convex bending for both substrates.

  13. Mechanical properties of amorphous indium–gallium–zinc oxide thin films on compliant substrates for flexible optoelectronic devices

    International Nuclear Information System (INIS)

    Mohammed, D.W.; Waddingham, R.; Flewitt, A.J.; Sierros, K.A.; Bowen, J.; Kukureka, S.N.

    2015-01-01

    Amorphous indium–gallium–zinc-oxide (a-IGZO) thin films were deposited using RF magnetron sputtering on polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) flexible substrates and their mechanical flexibility investigated using uniaxial tensile and buckling tests coupled with in situ optical microscopy. The uniaxial fragmentation test demonstrated that the crack onset strain of the IGZO/PEN was ~ 2.9%, which is slightly higher than that of IGZO/PET. Also, uniaxial tensile crack density analysis suggests that the saturated crack spacing of the film is strongly dependent on the mechanical properties of the underlying polymer substrate. Buckling test results suggest that the crack onset strain (equal to ~ 1.2%, of the IGZO/polymer samples flexed in compression to ~ 5.7 mm concave radius of curvature) is higher than that of the samples flexed with the film being in tension (convex bending) regardless whether the substrate is PEN or PET. The saturated crack density of a-IGZO film under the compression buckling mode is smaller than that of the film under the tensile buckling mode. This could be attributed to the fact that the tensile stress encouraged this crack formation originating from surface defects in the coating. It could also be due to the buckling delamination of the thin coating from the substrate at a lower strain than that at which a crack initiates during flexing in compression. These results provide useful information on the mechanical reliability of a-IGZO films for the development of flexible electronics. - Highlights: • Mechanical flexibility of IGZO thin films investigated by uniaxial tensile and buckling tests • Uniaxial fragmentation gives crack onset strain for IGZO/PEN of 2.9% (higher than for IGZO/PET.) • Saturated crack spacing strongly dependent on mechanical properties of polymer substrate • Crack onset strain in concave bending higher than in convex bending for both substrates

  14. Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

    Science.gov (United States)

    Zhu, Wencong

    Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because

  15. Transparent and Flexible Zinc Tin Oxide Thin Film Transistors and Inverters using Low-pressure Oxygen Annealing Process

    Science.gov (United States)

    Lee, Kimoon; Kim, Yong-Hoon; Kim, Jiwan; Oh, Min Suk

    2018-05-01

    We report on the transparent and flexible enhancement-load inverters which consist of zinc tin oxide (ZTO) thin film transistors (TFTs) fabricated at low process temperature. To control the electrical characteristics of oxide TFTs by oxygen vacancies, we applied low-pressure oxygen rapid thermal annealing (RTA) process to our devices. When we annealed the ZTO TFTs in oxygen ambient of 2 Torr, they showed better electrical characteristics than those of the devices annealed in the air ambient of 760 Torr. To realize oxide thin film transistor and simple inverter circuits on flexible substrate, we annealed the devices in O2 of 2 Torr at 150° C and could achieve the decent electrical properties. When we used transparent conductive oxide electrodes such as indium zinc oxide (IZO) and indium tin oxide (ITO), our transparent and flexible inverter showed the total transmittance of 68% in the visible range and the voltage gain of 5. And the transition voltage in voltage transfer curve was located well within the range of operation voltage.

  16. Elucidating doping driven microstructure evolution and optical properties of lead sulfide thin films grown from a chemical bath

    Science.gov (United States)

    Mohanty, Bhaskar Chandra; Bector, Keerti; Laha, Ranjit

    2018-03-01

    Doping driven remarkable microstructural evolution of PbS thin films grown by a single-step chemical bath deposition process at 60 °C is reported. The undoped films were discontinuous with octahedral-shaped crystallites after 30 min of deposition, whereas Cu doping led to a distinctly different surface microstructure characterized by densely packed elongated crystallites. A mechanism, based on the time sequence study of microstructural evolution of the films, and detailed XRD and Raman measurements, has been proposed to explain the contrasting microstructure of the doped films. The incorporation of Cu forms an interface layer, which is devoid of Pb. The excess Cu ions in this interface layer at the initial stages of film growth strongly interact and selectively stabilize the charged {111} faces containing either Pb or S compared to the uncharged {100} faces that contain both Pb and S. This interaction interferes with the natural growth habit resulting in the observed surface features of the doped films. Concurrently, the Cu-doping potentially changed the optical properties of the films: A significant widening of the bandgap from 1.52 eV to 1.74 eV for increase in Cu concentration from 0 to 20% was observed, making it a highly potential absorber layer in thin film solar cells.

  17. Electrodeposition of zinc oxide/tetrasulfonated copper phthalocyanine hybrid thin film for dye-sensitized solar cell application

    Energy Technology Data Exchange (ETDEWEB)

    Luo Xinze [Key Laboratory of Polyoxometalates Science of Ministry of Education, College of Chemistry, Northeast Normal University, Changchun 130024 (China); College of Chemistry and Biological Science, Yili Normal University, Yining 835000, (China); Xu Lin, E-mail: linxu@nenu.edu.cn [Key Laboratory of Polyoxometalates Science of Ministry of Education, College of Chemistry, Northeast Normal University, Changchun 130024 (China); Xu Bingbing; Li Fengyan [Key Laboratory of Polyoxometalates Science of Ministry of Education, College of Chemistry, Northeast Normal University, Changchun 130024 (China)

    2011-05-15

    Hybrid film of zinc oxide (ZnO) and tetrasulfonated copper phthalocyanine (TSPcCu) was grown on an indium tin oxide (ITO) glass by one-step cathodic electrodeposition from aqueous mixtures of Zn(NO{sub 3}){sub 2}, TSPcCu and KCl. The addition of TSPcCu strongly influences the morphology and crystallographic orientation of the ZnO. The nanosheets stack of ZnO leads to a porous surface structure which is advantageous to further adsorb organic dyes. The photovoltaic properties were investigated by assembling the DSSC device based on both the only ZnO film and the ZnO/TSPcCu hybrid films. Photoelectrochemical analysis revealed that the optimized DSSC device with TSPcCu represented a more than three-fold improvement in power conversion efficiency than the device without TSPcCu. The DSSC based on ZnO/TSPcCu hybrid films demonstrates an open circuit voltage of 0.308 V, a short circuit current of 90 {mu}A cm{sup -2}, a fill factor of 0.26, and a power conversion efficiency of 0.14%.

  18. Electrodeposition of zinc oxide/tetrasulfonated copper phthalocyanine hybrid thin film for dye-sensitized solar cell application

    International Nuclear Information System (INIS)

    Luo Xinze; Xu Lin; Xu Bingbing; Li Fengyan

    2011-01-01

    Hybrid film of zinc oxide (ZnO) and tetrasulfonated copper phthalocyanine (TSPcCu) was grown on an indium tin oxide (ITO) glass by one-step cathodic electrodeposition from aqueous mixtures of Zn(NO 3 ) 2 , TSPcCu and KCl. The addition of TSPcCu strongly influences the morphology and crystallographic orientation of the ZnO. The nanosheets stack of ZnO leads to a porous surface structure which is advantageous to further adsorb organic dyes. The photovoltaic properties were investigated by assembling the DSSC device based on both the only ZnO film and the ZnO/TSPcCu hybrid films. Photoelectrochemical analysis revealed that the optimized DSSC device with TSPcCu represented a more than three-fold improvement in power conversion efficiency than the device without TSPcCu. The DSSC based on ZnO/TSPcCu hybrid films demonstrates an open circuit voltage of 0.308 V, a short circuit current of 90 μA cm -2 , a fill factor of 0.26, and a power conversion efficiency of 0.14%.

  19. Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors.

    Science.gov (United States)

    Kim, Yeong-Gyu; Tak, Young Jun; Kim, Hee Jun; Kim, Won-Gi; Yoo, Hyukjoon; Kim, Hyun Jae

    2018-04-03

    We fabricated wire-type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) using a self-formed cracked template based on a lift-off process. The electrical characteristics of wire-type IGZO TFTs could be controlled by changing the width and density of IGZO wires through varying the coating conditions of template solution or multi-stacking additional layers. The fabricated wire-type devices were applied to sensors after functionalizing the surface. The wire-type pH sensor showed a sensitivity of 45.4 mV/pH, and this value was an improved sensitivity compared with that of the film-type device (27.6 mV/pH). Similarly, when the wire-type device was used as a glucose sensor, it showed more variation in electrical characteristics than the film-type device. The improved sensing properties resulted from the large surface area of the wire-type device compared with that of the film-type device. In addition, we fabricated wire-type IGZO TFTs on flexible substrates and confirmed that such structures were very resistant to mechanical stresses at a bending radius of 10 mm.

  20. The Influence of Doping with Transition Metal Ions on the Structure and Magnetic Properties of Zinc Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Jenica Neamtu

    2014-01-01

    Full Text Available Zn1−xNixO (x=0.03÷0.10 and Zn1−xFexO (x=0.03÷0.15 thin films were synthesized by sol-gel method. The structure and the surface morphology of zinc oxide thin films doped with transition metal (TM ions have been investigated by X-ray diffraction (XRD and atomic force microscopy (AFM. The magnetic studies were done using vibrating sample magnetometer (VSM at room temperature. Experimental results revealed that the substitution of Ni ions in ZnO wurtzite lattice for the contents x=0.03÷0.10 (Ni2+ leads to weak ferromagnetism of thin films. For Zn1-xFexO with x=0.03÷0.05, the Fe3+ ions are magnetic coupling by superexchange interaction via oxygen ions in wurtzite structure. For x=0.10÷0.15 (Fe3+ one can observe the increasing of secondary phase of ZnFe2O4 spinel. The Zn0.9Fe0.1O film shows a superparamagnetic behavior due to small crystallite sizes and the net spin magnetic moments arisen from the interaction between the iron ions through an oxygen ion in the spinel structure.

  1. Zinc oxide films impurified with Ti and prepared by the Sol-gel method; Peliculas de oxido de zinc impurificadas con Ti y preparadas por el metodo Sol-gel

    Energy Technology Data Exchange (ETDEWEB)

    Tirado G, S. [ESFM-IPN, 07738 Mexico D.F. (Mexico); Cazares R, J.M.; Maldonado, A. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico)

    2006-07-01

    Titanium-doped zinc oxide thin films have been prepared on silicon substrate using the Sol-Gel technique. The structural, morphology, electrical and optical properties of such thin films were studied as a function of titanium concentration (0.5, 1 and 1.5 %) and the thin films thickness. Zinc acetate dihydrate and titanium (VI)-oxy acetylacetonate were used as precursor materials, using 2-methoxyethanol and monoethanolamine as via. The X-ray diffraction spectra show polycrystalline films in all the cases. It can see for all the thin films a preferential growth along the (002) planes where the titanium concentration and also the thin films thickness play an important rule. No structural changes are observed at all. The surface morphology studied shows as the grain size decreases when thin thickness is increases. For titanium concentration of 0.5, 1 and 1.5 % values the grains size increase also. The thin films thickness for titanium concentration of 1.5 % was 500 nm (4v), 400 nm (3v), 180 nm (2v) and 130 nm (1v), values obtained from cross-section micrographs. Highly resistive samples are obtained for substrate soda-lime even showing high transmittance. Better physical properties are required for gas sensors or semitransparent electrodes and other possible applications. (Author)

  2. Pulsed laser deposition of HfO{sub 2} thin films on indium zinc oxide: Band offsets measurements

    Energy Technology Data Exchange (ETDEWEB)

    Craciun, D.; Craciun, V., E-mail: valentin.craciun@inflpr.ro

    2017-04-01

    Highlights: • High quality amorphous IZO and HfO{sub 2} films were obtained by PLD technique. • XPS measurements were used to obtain the valence band alignment in HfO{sub 2}/IZO heterostructure. • A valence band offset (ΔE{sub V}) of 1.75 eV was obtained for the HfO{sub 2}/IZO heterostructure. • A conduction band offset (ΔE{sub C}) of 0.65 eV was estimated for the HfO{sub 2}/IZO heterostructure. - Abstract: One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO{sub 2}. The estimation of the valence band discontinuity (ΔE{sub V}) of HfO{sub 2}/IZO heterostructure grown using the pulsed laser deposition technique, with In/(In + Zn) = 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO{sub 2} film deposited on a thick IZO film. A value of ΔE{sub V} = 1.75 ± 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO{sub 2} and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset ΔE{sub C} = 0.65 ± 0.05 eV in HfO{sub 2}/IZO heterostructure was then obtained.

  3. Effects of argon flow rate on electrical properties of amorphous indium gallium zinc oxide thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, A.K.; Wu, G.M., E-mail: wu@mail.cgu.edu.tw

    2016-04-30

    In this report, amorphous indium gallium zinc oxide (a-IGZO) thin films were deposited on glass substrates using different argon flow rates (AFRs). The impact on the electrical properties of the a-IGZO thin-film transistors with various AFRs during film growth has been carefully investigated. The AFR varied 20–60 sccm while the oxygen flow rate was maintained at 1 sccm. All a-IGZO films achieved transmittance higher than 80% in the wavelength range of 350–1000 nm, and it increased slightly with increasing AFR in the higher wavelength region. The rise in partial pressure due to increased AFR could affect the performance, in particular by increasing the current on/off ratio, and changes in electron mobility, sub-threshold swing voltage and threshold voltage. The optimal results were attained at AFR of 50 sccm. The field effect mobility, sub-threshold swing, ratio of on-current to the off-current, interfacial trap density and threshold voltage are 27.7 cm{sup 2}/V·s, 0.11 V/dec, 2.9 × 10{sup 8}, 1.1 × 10{sup 12} cm{sup −2} eV{sup −1} and 0.84 V, respectively. In addition, good electrical properties were achieved using dielectric SiO{sub 2} prepared by simple, low-cost electron beam evaporator system. - Highlights: • IGZO thin films RF-sputtered on glass substrates under various Ar to oxygen flow rates • The electrical performances and thin film quality of a-IGZO TFT were characterized. • High mobility 27.7 cm{sup 2}/V·s and very small sub-threshold voltage 0.11 V/decade obtained. • Simple and low cost electron-beam deposited SiO{sub 2} used as gate dielectric. • Ohmic behavior of source–drain with channel material has been achieved.

  4. Effects of argon flow rate on electrical properties of amorphous indium gallium zinc oxide thin-film transistors

    International Nuclear Information System (INIS)

    Sahoo, A.K.; Wu, G.M.

    2016-01-01

    In this report, amorphous indium gallium zinc oxide (a-IGZO) thin films were deposited on glass substrates using different argon flow rates (AFRs). The impact on the electrical properties of the a-IGZO thin-film transistors with various AFRs during film growth has been carefully investigated. The AFR varied 20–60 sccm while the oxygen flow rate was maintained at 1 sccm. All a-IGZO films achieved transmittance higher than 80% in the wavelength range of 350–1000 nm, and it increased slightly with increasing AFR in the higher wavelength region. The rise in partial pressure due to increased AFR could affect the performance, in particular by increasing the current on/off ratio, and changes in electron mobility, sub-threshold swing voltage and threshold voltage. The optimal results were attained at AFR of 50 sccm. The field effect mobility, sub-threshold swing, ratio of on-current to the off-current, interfacial trap density and threshold voltage are 27.7 cm"2/V·s, 0.11 V/dec, 2.9 × 10"8, 1.1 × 10"1"2 cm"−"2 eV"−"1 and 0.84 V, respectively. In addition, good electrical properties were achieved using dielectric SiO_2 prepared by simple, low-cost electron beam evaporator system. - Highlights: • IGZO thin films RF-sputtered on glass substrates under various Ar to oxygen flow rates • The electrical performances and thin film quality of a-IGZO TFT were characterized. • High mobility 27.7 cm"2/V·s and very small sub-threshold voltage 0.11 V/decade obtained. • Simple and low cost electron-beam deposited SiO_2 used as gate dielectric. • Ohmic behavior of source–drain with channel material has been achieved.

  5. Growth of manganese sulfide (α-MnS) thin films by thermal vacuum evaporation: Structural, morphological and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Hannachi, Amira, E-mail: amira.hannachi88@gmail.com [MALTA-Consolider Team, Institut de Ciència dels Materials – Departamento de Fisica Aplicada, University of Valencia, E-46100 Burjassot, Valencia (Spain); Université de Tunis El-Manar, Faculté des Sciences de Tunis, Laboratoire de Chimie Analytique et Electrochimie, LR99ES15, 2092 Tunis (Tunisia); Segura, Alfredo [MALTA-Consolider Team, Institut de Ciència dels Materials – Departamento de Fisica Aplicada, University of Valencia, E-46100 Burjassot, Valencia (Spain); Maghraoui-Meherzi, Hager [Université de Tunis El-Manar, Faculté des Sciences de Tunis, Laboratoire de Chimie Analytique et Electrochimie, LR99ES15, 2092 Tunis (Tunisia)

    2016-09-15

    MnS thin films have been successfully prepared by thermal evaporation method at different substrate temperatures using different masses of MnS powder. The prepared films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and UV–visible spectrophotometry. The XRD measurements show that the films crystallized in the pure α-MnS for substrate temperatures above 100 °C. The optical bandgap of thin films is found to be in the range of 3.2–3.3 eV. A factorial experimental design was used for determining the influence of the two experimental parameters on the films growth. - Highlights: • α-MnS films were deposited on glass and quartz substrates using the thermal evaporation technique. • The effect of substrate temperature on the properties of the MnS films has been studied. • The factorial design was used to determine the most influence parameters.

  6. Influence of indium concentration and substrate temperature on the physical characteristics of chemically sprayed ZnO:In thin films deposited from zinc pentanedionate and indium sulfate

    International Nuclear Information System (INIS)

    Castaneda, L; Morales-Saavedra, O G; Cheang-Wong, J C; Acosta, D R; Banuelos, J G; Maldonado, A; Olvera, M de la L

    2006-01-01

    Chemically sprayed indium-doped zinc oxide thin films (ZnO:In) were deposited on glass substrates starting from zinc pentanedionate and indium sulfate. The influence of both the dopant concentration in the starting solution and the substrate temperature on the transport, morphology, composition, linear and nonlinear optical (NLO) properties of the ZnO:In thin films were studied. The structure of all the ZnO:In thin films was polycrystalline, and variation in the preferential growth with the indium content in the solution was observed: from an initial (002) growth in films with low In content, switching to a predominance of (101) planes for intermediate dopant regime, and finally turning to a (100) growth for heavily doped films. The crystallite size was found to decrease with doping concentration and range from 36 to 23 nm. The film composition and the dopant concentration were determined by Rutherford backscattering spectrometry; these results showed that the films are almost stoichiometric ZnO. The optimum deposition conditions leading to conductive and transparent ZnO:In thin films were also found. In this way a resistivity of 4 x 10 -3 Ω cm and an average transmittance in the visible spectra of 85%, with a (101) preferential growth, were obtained in optimized ZnO:In thin films

  7. Thermal Effect on the Structural, Electrical, and Optical Properties of In-Line Sputtered Aluminum Doped Zinc Oxide Films Explored with Thermal Desorption Spectroscopy

    Directory of Open Access Journals (Sweden)

    Shang-Chou Chang

    2014-01-01

    Full Text Available This work investigates the thermal effect on the structural, electrical, and optical properties of aluminum doped zinc oxide (AZO films. The AZO films deposited at different temperatures were measured using a thermal desorption system to obtain their corresponding thermal desorption spectroscopy (TDS. In addition to obtaining information of thermal desorption, the measurement of TDS also has the effect of vacuum annealing on the AZO films. The results of measuring TDS imply part of the doped aluminum atoms do not stay at substituted zinc sites in AZO films. The (002 preferential direction of the AZO films in X-ray diffraction spectra shifts to a lower angle after measurement of TDS. The grain size grows and surface becomes denser for all AZO films after measurement of TDS. The carrier concentration, mobility, and average optical transmittance increase while the electrical resistivity decreases for AZO films after measurement of TDS. These results indicate that the AZO films deposited at 200°C are appropriate selections if the AZO films are applied in device fabrication of heat-produced process.

  8. and gallium-doped zinc oxide transparent conducting sol–gel thin films

    Indian Academy of Sciences (India)

    Administrator

    and 1∙76 × 10–2 Ω cm for GZO, when five multilayer coatings are made. The origin of ... indium source make its price increasing every day. On the other hand, zinc ..... Zhao Q, Xu X Y, Song X F, Zhang X Z, Yu D P, Li C P and. Guo L 2006 Appl.

  9. Optical properties of zinc phthalocyanine thin films prepared by pulsed laser deposition

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Bulíř, Jiří; Bensalah-Ledoux, A.; Guy, S.; Fitl, P.; Vrňata, M.; Lančok, Ján; Moine, B.

    2014-01-01

    Roč. 117, č. 1 (2014), 377-381 ISSN 0947-8396 R&D Projects: GA ČR(CZ) GAP108/11/1298 Grant - others:AVČR(CZ) M100101271 Institutional support: RVO:68378271 Keywords : optical properties * zinc phthalocyanine * laser deposition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2014

  10. Selective UV–O3 treatment for indium zinc oxide thin film transistors with solution-based multiple active layer

    Science.gov (United States)

    Kim, Yu-Jung; Jeong, Jun-Kyo; Park, Jung-Hyun; Jeong, Byung-Jun; Lee, Hi-Deok; Lee, Ga-Won

    2018-06-01

    In this study, a method to control the electrical performance of solution-based indium zinc oxide (IZO) thin film transistors (TFTs) is proposed by ultraviolet–ozone (UV–O3) treatment on the selective layer during multiple IZO active layer depositions. The IZO film is composed of triple layers formed by spin coating and UV–O3 treatment only on the first layer or last layer. The IZO films are compared by X-ray photoelectron spectroscopy, and the results show that the atomic ratio of oxygen vacancy (VO) increases in the UV–O3 treatment on the first layer, while it decreases on last layer. The device characteristics of the bottom gated structure are also improved in the UV–O3 treatment on the first layer. This indicates that the selective UV–O3 treatment in a multi-stacking active layer is an effective method to optimize TFT properties by controlling the amount of VO in the IZO interface and surface independently.

  11. Photovoltaic cells employing zinc phosphide

    Science.gov (United States)

    Barnett, Allen M.; Catalano, Anthony W.; Dalal, Vikram L.; Masi, James V.; Meakin, John D.; Hall, Robert B.

    1984-01-01

    A photovoltaic cell having a zinc phosphide absorber. The zinc phosphide can be a single or multiple crystal slice or a thin polycrystalline film. The cell can be a Schottky barrier, heterojunction or homojunction device. Methods for synthesizing and crystallizing zinc phosphide are disclosed as well as a method for forming thin films.

  12. Synthesis of transparent ZnO/PMMA nanocomposite films through free-radical copolymerization of asymmetric zinc methacrylate acetate and in-situ thermal decomposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Lin [Department of Chemistry, Nanchang University, 999 Xuefu Avenue, Nanchang 330031 (China); Institute of Polymers, Nanchang University, 999 Xuefu Avenue, Nanchang 330031 (China); Li Fan, E-mail: lfan@ncu.edu.cn [Institute of Polymers, Nanchang University, 999 Xuefu Avenue, Nanchang 330031 (China); Chen Yiwang, E-mail: ywchen@ncu.edu.cn [Department of Chemistry, Nanchang University, 999 Xuefu Avenue, Nanchang 330031 (China); Institute of Polymers, Nanchang University, 999 Xuefu Avenue, Nanchang 330031 (China); Wang Xiaofeng [Institute of Polymers, Nanchang University, 999 Xuefu Avenue, Nanchang 330031 (China)

    2011-08-15

    In this paper, a new and simple approach for in-situ preparation of transparent ZnO/poly(metyl methacrylate) (ZnO/PMMA) nanocomposite films was developed. Poly(methyl methacrylate)-co-poly(zinc methacrylate acetate) (PMMA-co-PZnMAAc) copolymer was synthesized via free-radical polymerization between methyl methacrylate (MMA) and zinc methacrylate acetate (ZnMAAc), where asymmetric ZnMAAc with only one terminal double bond (C=C) was applied to act as the precursor for ZnO nanocrystals and could avoid cross-link. Subsequently, transparent ZnO/PMMA nanocomposite films were obtained by in-situ thermal decomposition. Scanning electron microscope (SEM) image revealed that ZnO nanocrystals were homogeneously dispersed in PMMA matrix. With thermal decomposition time increasing, the absorption intensity in UV region and photoluminescence intensity of ZnO/PMMA nanocomposite films enhanced. However, the optical properties diminished when the thermal decomposition temperature increased. The TGA measurement displayed ZnO/PMMA nanocomposite films prepared by the in-situ synthesis method possessed better thermal stability compared with those prepared by the physical blending method and pristine PMMA films. - Highlights: > ZnO/PMMA hybrid films were prepared via free-radical polymerization and in-situ thermal decomposition. > ZnO NCs are homogeneously dispersed in the PMMA matrix and these films have good optical properties. > Thermal stability of these films is improved compared with those of physically blending ones.

  13. Synthesis of transparent ZnO/PMMA nanocomposite films through free-radical copolymerization of asymmetric zinc methacrylate acetate and in-situ thermal decomposition

    International Nuclear Information System (INIS)

    Zhang Lin; Li Fan; Chen Yiwang; Wang Xiaofeng

    2011-01-01

    In this paper, a new and simple approach for in-situ preparation of transparent ZnO/poly(metyl methacrylate) (ZnO/PMMA) nanocomposite films was developed. Poly(methyl methacrylate)-co-poly(zinc methacrylate acetate) (PMMA-co-PZnMAAc) copolymer was synthesized via free-radical polymerization between methyl methacrylate (MMA) and zinc methacrylate acetate (ZnMAAc), where asymmetric ZnMAAc with only one terminal double bond (C=C) was applied to act as the precursor for ZnO nanocrystals and could avoid cross-link. Subsequently, transparent ZnO/PMMA nanocomposite films were obtained by in-situ thermal decomposition. Scanning electron microscope (SEM) image revealed that ZnO nanocrystals were homogeneously dispersed in PMMA matrix. With thermal decomposition time increasing, the absorption intensity in UV region and photoluminescence intensity of ZnO/PMMA nanocomposite films enhanced. However, the optical properties diminished when the thermal decomposition temperature increased. The TGA measurement displayed ZnO/PMMA nanocomposite films prepared by the in-situ synthesis method possessed better thermal stability compared with those prepared by the physical blending method and pristine PMMA films. - Highlights: → ZnO/PMMA hybrid films were prepared via free-radical polymerization and in-situ thermal decomposition. → ZnO NCs are homogeneously dispersed in the PMMA matrix and these films have good optical properties. → Thermal stability of these films is improved compared with those of physically blending ones.

  14. Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

    Energy Technology Data Exchange (ETDEWEB)

    Tung, Duy Dao; Jeong, Hyun Dam [Chonnam Natioal University, Gwangju (Korea, Republic of)

    2014-09-15

    The In{sub 2}S{sub 3} thin films of tetragonal structure and In{sub 2}O{sub 3} films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et){sub 3}NH]+ [In(SCOCH{sub 3}){sub 4}]''-; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO{sub 2}) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm''2 V''-1s''-1 at a curing temperature of 500 o C, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

  15. Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

    Science.gov (United States)

    Estrada, M.; Hernandez-Barrios, Y.; Cerdeira, A.; Ávila-Herrera, F.; Tinoco, J.; Moldovan, O.; Lime, F.; Iñiguez, B.

    2017-09-01

    A crystalline-like temperature dependence of the electrical characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) is reported, in which the drain current reduces as the temperature is increased. This behavior appears for values of drain and gate voltages above which a change in the predominant conduction mechanism occurs. After studying the possible conduction mechanisms, it was determined that, for gate and drain voltages below these values, hopping is the predominant mechanism with the current increasing with temperature, while for values above, the predominant conduction mechanism becomes percolation in the conduction band or band conduction and IDS reduces as the temperature increases. It was determined that this behavior appears, when the effect of trapping is reduced, either by varying the density of states, their characteristic energy or both. Simulations were used to further confirm the causes of the observed behavior.

  16. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    International Nuclear Information System (INIS)

    Lin, Y. H.; Chou, J. C.

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

  17. Indium-gallium-zinc-oxide thin-film transistor with a planar split dual-gate structure

    Science.gov (United States)

    Liu, Yu-Rong; Liu, Jie; Song, Jia-Qi; Lai, Pui-To; Yao, Ruo-He

    2017-12-01

    An amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with a planar split dual gate (PSDG) structure has been proposed, fabricated and characterized. Experimental results indicate that the two independent gates can provide dynamical control of device characteristics such as threshold voltage, sub-threshold swing, off-state current and saturation current. The transconductance extracted from the output characteristics of the device increases from 4.0 × 10-6S to 1.6 × 10-5S for a change of control gate voltage from -2 V to 2 V, and thus the device could be used in a variable-gain amplifier. A significant advantage of the PSDG structure is its flexibility in controlling the device performance according to the need of practical applications.

  18. Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

    International Nuclear Information System (INIS)

    Jo, Kwang-Won; Cho, Won-Ju

    2014-01-01

    In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (ΔV ON ) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristic trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress

  19. The thermodynamics of arsenates, selenites, and sulfates in the oxidation zone of sulfide ores. XI. Solubility of synthetic chalcomenite analog and zinc selenite at 25°C

    Science.gov (United States)

    Charykova, M. V.; Krivovichev, V. G.; Ivanova, N. M.; Semenova, V. V.

    2015-12-01

    The aim of this study is the synthesis of CuSeO3·2H2O (chalcomenite analog), ZnSeO3·2H2O, and ZnSeO3·H2O and the investigation of their solubility in water. CuSeO3·2H2O has been synthesized from solutions of Cu nitrate and Na selenite, while Zn selenites were synthesized from solutions of Zn nitrate and Na selenite. The samples obtained have been examined with X-ray diffraction and infrared and Raman spectroscopy. The solubility has been determined using the isothermal saturation method in ampoules at 25°C. The solubility has been calculated using the Geochemist's Workbench (GMB 9.0) software package. Solubility products have been calculated for CuSeO3·2H2O (10-10.63), ZnSeO3·2H2O (10-8.35), and ZnSeO3·H2O (10-7.96). The database used comprises thermodynamic characteristics of 46 elements, 47 base particles, 48 redox pairs, 551 particles in solution, and 624 solid phases. The Eh-pH diagrams of the Zn-Se-H2O and Cu-Se-H2O systems were plotted for the average contents of these elements in underground water in oxidation zones of sulfide deposits.

  20. WATER SORPTION PROPERTIES AND ANTIMICROBIAL ACTION OF ZINC OXIDE NANO PARTICLES LOADED SAGO STARCH FILM

    Directory of Open Access Journals (Sweden)

    Sunil Bajpai

    2013-02-01

    Full Text Available In this work, sago starch based films have been loaded with ZnO nanoparticles prepared insitu via using an unique equilibration-cum-hydrothermal approach. The films have been characterized by XRD, DSC,SPR ,FTIR and SEM analysis. The moisture absorption behavior of plain and ZnO nanoparticles loaded films have been studied at 23, 31 and 37o C.The equilibrium moisture uptake data was found to fit well on GAB isotherm model and the monolayer sorption capacity Mo for the plain and ZnO nanoparticles loaded films was 0.089, 0.039 ,0.021 g/g and 0.042, 0.012, 0.007 g/g at 23,31 and 37 oC respectively. Moreover, the water vapor transmission rates (WVTR for plain and ZnO nanoparticles loaded films at 23,31,37 oC were 11.19x10-4, 48.9x10-4, 62.1x10-4 and 3.73 x10-4, 6.21x10-4, 24.8x10-4 respectively. These films have shown excellent antibacterial action against model bacteria E.coli when investigated qualitatively by zone inhibition method. Films exhibit great potential to be used as packaging films to protect food stuff against microbial contaminents.

  1. Transparent conducting zinc oxide thin film prepared by off-axis rf ...

    Indian Academy of Sciences (India)

    Highly conducting and transparent ZnO : Al thin films were grown by off-axis rf magnetron sputtering on amorphous silica substrates without any post-deposition annealing. The electrical and optical properties of the films deposited at various substrate temperatures and target to substrate distances were investigated in detail ...

  2. Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, Bhaumik V., E-mail: bhaumik-phy@yahoo.co.in; Joshi, U. S. [Department of Physics, University School of Sciences, Gujarat University, Ahmedabad-380 009 (India)

    2016-05-23

    Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10{sup −3} V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×10{sup 18} cm{sup 3}, while the Hall mobility of the IGZO thin film was 16 cm{sup 2} V{sup −1}S{sup −1}.

  3. Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films

    KAUST Repository

    Barasheed, Abeer Z.; Sarath Kumar, S. R.; Alshareef, Husam N.

    2013-01-01

    In this study, the temperature dependent thermoelectric properties of sol-gel prepared ZnO and 3% Ga-doped ZnO (GZO) thin films have been explored. The power factor of GZO films, as compared to ZnO, is improved by nearly 17% at high temperature. A stabilization anneal, prior to thermoelectric measurements, in a strongly reducing Ar/H2 (95/5) atmosphere at 500°C was found to effectively stabilize the chemically derived films, practically eliminating hysteresis during thermoelectric measurements. Subtle changes in the thermoelectric properties of stabilized films have been correlated to oxygen vacancies and excitonic levels that are known to exist in ZnO-based thin films. The role of Ga dopants and defects, formed upon annealing, in driving the observed complex temperature dependence of the thermoelectric properties is discussed. © The Royal Society of Chemistry 2013.

  4. Zinc oxide nanoparticle-coated films: fabrication, characterization, and antibacterial properties

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Yunhong, E-mail: y.jiang@leeds.ac.uk [University of Leeds, Institute of Particle Science and Engineering (United Kingdom); O’Neill, Alex J. [University of Leeds, School of Molecular and Cellular Biology (United Kingdom); Ding, Yulong [University of Leeds, Institute of Particle Science and Engineering (United Kingdom)

    2015-04-15

    In this article, novel antibacterial PVC-based films coated with ZnO nanoparticles (NPs) were fabricated, characterized, and studied for their antibacterial properties. It was shown that the ZnO NPs were coated on the surface of the PVC films uniformly and that the coating process did not affect the size and shape of the NPs on the surface of PVC films. Films coated with concentrations of either 0.2 or 0.075 g/L of ZnO NPs exhibited antibacterial activity against both Gram-positive (Staphylococcus aureus) and Gram-negative (Escherichia coli) bacteria, but exhibited no antifungal activity against Aspergillus flavus and Penicillium citrinum. Smaller particles (100 nm) exhibited more potent antibacterial activity than larger particles (1000 nm). All ZnO-coated films maintained antibacterial activity after 30 days in water.

  5. Effect of substrate temperature on the properties of pyrolytically deposited nitrogen-doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Golshahi, S., E-mail: golshahi@iaurasht.ac.ir [Department of Physics, Rasht Branch, Islamic Azad University, Rasht (Iran, Islamic Republic of); Rozati, S.M. [Department of Physics, University of Guilan, 41335-1914 Rasht (Iran, Islamic Republic of); Botelho do Rego, A.M. [Centro de Quimica-Fisica Molecular and IN, Technical University of Lisbon, IST 1049-001 Lisboa (Portugal); Wang, J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Elangovan, E.; Martins, R.; Fortunato, E. [CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa (UNL), 2829-516 Caparica (Portugal)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer Hall-effect measurement introduces the optimum temperature of 450 Degree-Sign C for fabricating p-type high quality ZnO films. Black-Right-Pointing-Pointer X-ray photoelectron spectroscopy (XPS) proved the nitrogen presence at the surface of doped ZnO thin films at all substrate temperatures. Black-Right-Pointing-Pointer Films prepared at lower substrate temperature (300 Degree-Sign C and 350 Degree-Sign C) own wider band gaps. Black-Right-Pointing-Pointer Surface roughness strongly is affected by substrate temperature variations. - Abstract: The effect of substrate temperature (T{sub s}) on the properties of pyrolytically deposited nitrogen (N) doped zinc oxide (ZnO) thin films was investigated. The T{sub s} was varied from 300 Degree-Sign C to 500 Degree-Sign C, with a step of 50 Degree-Sign C. The positive sign of Hall coefficient confirmed the p-type conductivity in the films deposited at 450 Degree-Sign C and 500 Degree-Sign C. X-ray diffraction studies confirmed the ZnO structure with a dominant peak from (1 0 0) crystal plane, irrespective of the variation in T{sub s}. The presence of N in the ZnO structure was evidenced through X-ray photoelectron spectroscopy (XPS) analysis. The obtained high N concentration reveals that the 450 Degree-Sign C is the optimal T{sub s}. Atomic force microscope (AFM) analysis showed that the surface roughness was increased with the increasing T{sub s} until 400 Degree-Sign C but then decreased. It is found that the transmittance of the deposited films is increased with the increasing T{sub s}. The optical band gap calculated from the absorption edge showed that the films deposited with T{sub s} of 300 Degree-Sign C and 350 Degree-Sign C possess higher values than those deposited at higher T{sub s}.

  6. Development of sputtered CuSbS2 thin films grown by sequential deposition of binary sulfides

    Science.gov (United States)

    Medina-Montes, M. I.; Vieyra-Brito, O.; Mathews, N. R.; Mathew, X.

    2018-05-01

    In this work, CuSbS2 thin films were developed by annealing binary precursors deposited sequentially by rf magnetron sputtering. The recrystallization process was optimized and the films were extensively characterized using a number of tools such as XRD, Raman, SEM, energy dispersive x-ray spectroscopy, atomic force microscopy, Hall, UV–vis spectroscopy, Ellipsometry, Seebeck, and photoresponse. The influence of annealing temperature on the structure, morphology, elemental composition, optical and electrical properties are reported. Annealing below 350 °C resulted in famatinite (Cu3SbS4) and chalcostibite (CuSbS2) ternaries as well as binary phases. Phase-pure chalcostibite was obtained in the range of 350 °C–375 °C. At 400 °C, although CuSbS2 was predominant, tetrahedrite phase (Cu12Sb4S13) appeared as an additional phase. The elemental composition of the films was slightly sulfur deficient, and the atomic percentages of Cu, Sb and S showed a dependence on annealing temperature. The material properties of the phase-pure CuSbS2 thin films are: optical band gap in the range of 1.5–1.62 eV, absorption coefficient close to 105 cm‑1, atomic ratios of Cu/Sb ∼1 and (Cu + Sb)/S ∼1.2, crystal size 18.3–24.5 nm and grain size 50–300 nm. The films were photo-sensitive, showed p-type semiconductor behavior. Electrical resistivity, carrier density and hole mobility were 94–459 Ω cm, 1.6–7.0 × 1015 cm‑3 and 8.4–9.5 cm2 V‑1 s respectively.

  7. Interaction of selected gases with zinc phthalocyanine thin films: theoretical and experimental studies

    Czech Academy of Sciences Publication Activity Database

    Šebera, Jakub; Fitl, P.; Vlček, J.; Vrňata, M.; Fendrych, František; Kopeček, Jaromír; Kratochvílová, Irena

    2013-01-01

    Roč. 64, č. 1 (2013), "10202-p1"-"10202-p6" ISSN 1286-0042 R&D Projects: GA TA ČR TA01011165; GA ČR(CZ) GAP304/10/1951; GA ČR(CZ) GAP108/11/1298 Institutional support: RVO:68378271 Keywords : Zinc phthalocyanine * charge transport * sensor * DFT Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.789, year: 2013

  8. Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

    International Nuclear Information System (INIS)

    Yoo, Hwansu; Kim, Hyojin; Kim, Dojin

    2014-01-01

    A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

  9. Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Hwansu; Kim, Hyojin; Kim, Dojin [Chungnam National University, Daejeon (Korea, Republic of)

    2014-11-15

    A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

  10. Formation of CuInSe{sub 2} films from metal sulfide and selenide precursor nanocrystals by gas-phase selenization, an in-situ XRD study

    Energy Technology Data Exchange (ETDEWEB)

    Capon, B., E-mail: boris.capon@ugent.be [Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, B-9000 Ghent (Belgium); Dierick, R. [Physics and Chemistry of Nanostructures, Ghent University, Krijgslaan 281-S3, B-9000 Ghent (Belgium); Hens, Z. [Physics and Chemistry of Nanostructures, Ghent University, Krijgslaan 281-S3, B-9000 Ghent (Belgium); Center for Nano and Biophotonics, Ghent University, Ghent (Belgium); Detavernier, C. [Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, B-9000 Ghent (Belgium)

    2016-08-01

    In this work phase pure CuInSe{sub 2} thin flms were obtained by selenization of ternary CuInSe{sub 2} and CuInS{sub 2} nanocrystals and mixtures of binary nanocrystals such as CuS, In{sub 2}S{sub 3}, Cu{sub 2}Se and In{sub 2}Se{sub 3}. The temperature of the selenium source was kept at 400 °C during selenization. Monitoring the process using in-situ x-ray diffraction, the effect of selenization on the phase formation and grain growth in the precursor film was investigated. Whereas CuInSe{sub 2} and CuInS{sub 2} nanocrystals exhibit little grain growth, we found that mixtures of binary nanocrystals can show significant sintering depending on the reaction conditions. For the mixture of CuS and In{sub 2}S{sub 3} nanocrystals, the crystallinity and the morphology of the obtained fims strongly depends on the Cu/In ratio, with a Cu excess strongly promoting grain growth. With mixtures of Cu{sub 2}Se and In{sub 2}Se{sub 3} nanocrystals the selenium partial pressure plays a crucial role. Selenium evaporation from the mixed compounds results in CuInSe{sub 2} films composed of relatively small crystallites. Higher selenium partial pressures however resulted in improved sintering. Incomplete propagation of the selenization reaction through the layer was observed though, only leading to a well sintered CuInSe{sub 2} top layer above a fine grained bottom layer. - Highlights: • Different types of colloidal nanocrystals were used as precursors to obtain CuInSe{sub 2} films by gas-phase selenization. • In-situ XRD was used to study the effect of selenization on the phase formation and grain growth in the precursor films. • For a mixture of binary metal sulfides the crystallinity and the morphology strongly depend on the Cu/In ratio. • Higher selenium partial pressures result in improved sintering for a mixture of binary metal selenides.

  11. Densification effects on solution-processed indium-gallium-zinc-oxide films and their thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Rim, You Seung; Kim, Hyun Jae [School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of)

    2014-09-15

    We report the effects of high-pressure annealing (HPA) on solution-processed InGaZnO (IGZO) thin-film transistors (TFTs). HPA increased the density of IGZO films. In particular, annealing in O{sub 2} at 1.0 MPa and 350 C resulted in a high-density and low-porosity IGZO film, as characterized using X-ray reflectivity (XRR) and ellipsometry measurements. This was attributed to the oxidative and compressive effects on the oxygen-deficient solution-processed IGZO film. TFTs annealed in O{sub 2} at 1.0 MPa and 350 C exhibited an increase in the field-effect mobility by a factor of approximately five compared with TFTs annealed in air at 0.1 MPa and 350 C. Furthermore, improvements in reliability under negative and positive bias stresses were also observed following HPA. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Observation of point defects in impurity-doped zinc selenide films using a monoenergetic positron beam

    International Nuclear Information System (INIS)

    Miyajima, T.; Okuyama, H.; Akimoto, K.; Mori, Y.; Wei, L.; Tanigawa, S.

    1992-01-01

    We studied point defects in ZnSe films grown by molecular beam epitaxy using the positron annihilation method. We found that doping with Ga atoms induces vacancy-type defects such as Zn vacancies, and that heavy doping with oxygen atoms induces interstitial type defects. We think that these defects are one of the causes of active carrier saturation in doped ZnSe films. (author)

  13. Origin of stress in radio frequency magnetron sputtered zinc oxide thin films

    International Nuclear Information System (INIS)

    Menon, Rashmi; Gupta, Vinay; Sreenivas, K.; Tan, H. H.; Jagadish, C.

    2011-01-01

    Highly c-axis oriented ZnO thin films have been deposited on silicon substrates by planar rf magnetron sputtering under varying pressure (10-50 mTorr) and oxygen percentage (50-100%) in the reactive gas (Ar + O 2 ) mixture. The as-grown films were found to be stressed over a wide range from -1 x 10 11 to -2 x 10 8 dyne/cm 2 that in turn depends strongly on the processing conditions, and the film becomes stress free at a unique combination of sputtering pressure and reactive gas composition. Raman spectroscopy and photoluminescence (PL) analyses identified the origin of stress as lattice distortion due to defects introduced in the ZnO thin film. FTIR study reveals that Zn-O bond becomes stronger with the increase in oxygen fraction in the reactive gas mixture. The lattice distortion or stress depends on the type of defects introduced during deposition. PL spectra show the formation of a shoulder in band emission with an increase in the processing pressure and are related to the presence of stress. The ratio of band emission to defect emission decreases with the increase in oxygen percentage from 50 to 100%. The studies show a correlation of stress with the structural, vibrational, and photoluminescence properties of the ZnO thin film. The systematic study of the stress will help in the fabrication of efficient devices based on ZnO film.

  14. Origin of stress in radio frequency magnetron sputtered zinc oxide thin films

    Science.gov (United States)

    Menon, Rashmi; Gupta, Vinay; Tan, H. H.; Sreenivas, K.; Jagadish, C.

    2011-03-01

    Highly c-axis oriented ZnO thin films have been deposited on silicon substrates by planar rf magnetron sputtering under varying pressure (10-50 mTorr) and oxygen percentage (50-100%) in the reactive gas (Ar + O2) mixture. The as-grown films were found to be stressed over a wide range from -1 × 1011 to -2 × 108 dyne/cm2 that in turn depends strongly on the processing conditions, and the film becomes stress free at a unique combination of sputtering pressure and reactive gas composition. Raman spectroscopy and photoluminescence (PL) analyses identified the origin of stress as lattice distortion due to defects introduced in the ZnO thin film. FTIR study reveals that Zn-O bond becomes stronger with the increase in oxygen fraction in the reactive gas mixture. The lattice distortion or stress depends on the type of defects introduced during deposition. PL spectra show the formation of a shoulder in band emission with an increase in the processing pressure and are related to the presence of stress. The ratio of band emission to defect emission decreases with the increase in oxygen percentage from 50 to 100%. The studies show a correlation of stress with the structural, vibrational, and photoluminescence properties of the ZnO thin film. The systematic study of the stress will help in the fabrication of efficient devices based on ZnO film.

  15. Compositional dependence of optical and electrical properties of indium doped zinc oxide (IZO) thin films deposited by chemical spray pyrolysis

    Science.gov (United States)

    Dintle, Lawrence K.; Luhanga, Pearson V. C.; Moditswe, Charles; Muiva, Cosmas M.

    2018-05-01

    The structural and optoelectronic properties of undoped and indium doped zinc oxide (IZO) thin films grown on glass substrates through a simple reproducible custom-made pneumatic chemical spray pyrolysis technique are presented. X-ray diffraction (XRD) results showed a polycrystalline structure of hexagonal wurtzite phase growing preferentially along the (002) plane for the undoped sample. Increase in dopant content modified the orientation leading to more pronounced (100) and (101) reflections. Optical transmission spectra showed high transmittance of 80-90% in the visible range for all thin films. The optical band gap energy (Eg) was evaluated on the basis of the derivative of transmittance (dT/dλ) versus wavelength (λ) model and Tauc's extrapolation method in the region where the absorption coefficient, α ≥ 104 cm-1. The observed values of Eg were found to decrease generally with increasing In dopant concentration. From the figure of merit calculations a sample with 4 at.% In dopant concentration showed better optoelectronic properties.

  16. Activation of sputter-processed indium–gallium–zinc oxide films by simultaneous ultraviolet and thermal treatments

    Science.gov (United States)

    Tak, Young Jun; Du Ahn, Byung; Park, Sung Pyo; Kim, Si Joon; Song, Ae Ran; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-01-01

    Indium–gallium–zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor characteristics. Thermal treatment is typically carried out at temperatures above 300 °C. Here, we propose activating sputter- processed IGZO films using simultaneous ultraviolet and thermal (SUT) treatments to decrease the required temperature and enhance their electrical characteristics and stability. SUT treatment effectively decreased the amount of carbon residues and the number of defect sites related to oxygen vacancies and increased the number of metal oxide (M–O) bonds through the decomposition-rearrangement of M–O bonds and oxygen radicals. Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.23 to 15.81 cm2/Vs, 3.96 × 107 to 1.03 × 108, and 11.2 to 7.2 V, respectively. PMID:26902863

  17. Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments.

    Science.gov (United States)

    Tak, Young Jun; Ahn, Byung Du; Park, Sung Pyo; Kim, Si Joon; Song, Ae Ran; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-02-23

    Indium-gallium-zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor characteristics. Thermal treatment is typically carried out at temperatures above 300 °C. Here, we propose activating sputter- processed IGZO films using simultaneous ultraviolet and thermal (SUT) treatments to decrease the required temperature and enhance their electrical characteristics and stability. SUT treatment effectively decreased the amount of carbon residues and the number of defect sites related to oxygen vacancies and increased the number of metal oxide (M-O) bonds through the decomposition-rearrangement of M-O bonds and oxygen radicals. Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.23 to 15.81 cm(2)/Vs, 3.96 × 10(7) to 1.03 × 10(8), and 11.2 to 7.2 V, respectively.

  18. Effect of aluminum addition on the optical, morphology and electrical behavior of spin coated zinc oxide thin films

    Directory of Open Access Journals (Sweden)

    Amit Kumar Srivastava

    2011-09-01

    Full Text Available Aluminum-doped ZnO thin films of high optical transmittance (∼ 84-100% and low resistivity (∼ 2.3x10-2 Ωcm have been prepared on glass substrate by the spin coating and subsequent annealing at 500°C for 1h in air or vacuum. Effect of aluminum doping and annealing environment on morphology, optical transmittance and electrical resistivity of ZnO thin films has been studied with possible application as a transparent electrode in photovoltaic. The changes occurring due to aluminum addition include reduction in grain size, root mean square roughness, peak-valley separation, and sheet resistance with improvement in the optical transmittance to 84-100% in the visible range. The origin of low electrical resistivity lies in increase in i electron concentration following aluminum doping (being trivalent, formation of oxygen vacancies due to vacuum annealing, filling of cation site with additional zinc at solution stage itself and ii carrier mobility.

  19. Enhancement of Egyptian soft white cheese shelf life using a novel chitosan/carboxymethyl cellulose/zinc oxide bionanocomposite film.

    Science.gov (United States)

    Youssef, Ahmed M; El-Sayed, Samah M; El-Sayed, Hoda S; Salama, Heba H; Dufresne, Alain

    2016-10-20

    A novel bionanocomposites packaging material prepared using chitosan (CH), carboxymethyl cellulose (CMC), and zinc oxide nanoparticles (ZnO-NPs), namely CH/CMC/ZnO bionanocomposites, was prepared by casting method. The CH/CMC/ZnO bionanocomposites were investigated using FT-IR, TEM, SEM, XRD, and TGA. The acquired bionanocomposites exhibited improved mechanical and thermal properties compare with the biocomposites (CH/CMC) blend. The soft white cheese were manufactured, packaged within the prepared bionanocomposites films and stored at 7°C for 30days. The influence of packaging material on packaged cheese (rheological properties, colour measurements, moisture, pH and titratable acidity) were assessed. Furthermore, the effect of packaging material on the total bacterial counts, mold & yeast and coliform in cheese was evaluated. The prepared bionanocomposites displayed good antibacterial activity against gram positive (Staphylococcus aureus), gram negative (Pseudomonas aeruginosa, Escherichia coli) bacteria and fungi (Candidia albicans). Moreover, the packaging films assisted in increasing the shelf life of white soft cheese. Therefore, it can be used in food packaging applications. Copyright © 2016 Elsevier Ltd. All rights reserved.

  20. Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors

    Science.gov (United States)

    Kim, Sang Tae; Shin, Yeonwoo; Yun, Pil Sang; Bae, Jong Uk; Chung, In Jae; Jeong, Jae Kyeong

    2017-09-01

    This paper proposes a new defect engineering concept for low-cost In- and Ga-free zinc tin oxide (ZTO) thin-film transistors (TFTs). This concept is comprised of capping ZTO films with tantalum (Ta) and a subsequent modest thermal annealing treatment at 200 °C. The Ta-capped ZTO TFTs exhibited a remarkably high carrier mobility of 70.8 cm2/Vs, low subthreshold gate swing of 0.18 V/decade, threshold voltage of -1.3 V, and excellent ION/OFF ratio of 2 × 108. The improvement (> two-fold) in the carrier mobility compared to the uncapped ZTO TFT can be attributed to the effective reduction of the number of adverse tailing trap states, such as hydroxyl groups or oxygen interstitial defects, which stems from the scavenging effect of the Ta capping layer on the ZTO channel layer. Furthermore, the Ta-capped ZTO TFTs showed excellent positive and negative gate bias stress stabilities. [Figure not available: see fulltext.

  1. Visible luminescence from highly textured Tb{sup 3+} doped RF sputtered zinc oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Sreedharan, R. Sreeja; Krishnan, R. Reshmi; Bose, R. Jolly; Kavitha, V.S.; Suresh, S. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Vinodkumar, R. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Department of Physics, University College, Thiruvananthapuram, Kerala (India); Sudheer, S.K. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Pillai, V.P. Mahadevan, E-mail: vpmpillai9@gmail.com [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India)

    2017-04-15

    Highly transparent, luminescent, c-axis oriented Tb{sup 3+} doped ZnO films are prepared by RF magnetron sputtering technique. The structural, morphological, optical and luminescence properties of these films are investigated as a function of Tb{sup 3+} doping concentration by X-ray diffraction (XRD), micro-Raman spectroscopy, atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), spectroscopic ellipsometry, UV-Visible spectroscopy and photoluminescence spectroscopy. The as-deposited films are found to be highly crystalline with wurtzite hexagonal phase of ZnO. The characteristic features of hexagonal wurtzite structure of ZnO, particularly the appearance of non-polar E{sub 2} modes are easily identified from the Raman spectra of the films. The surface morphology of the films revealed by FESEM and AFM images present a dense distribution of grains. The elemental analysis carried out using energy dispersive X-ray (EDX) spectra confirms the incorporation of Tb{sup 3+} ions in the ZnO lattice. The films are highly transparent in the visible region. Using ellipsometric analysis, the variation of refractive index, dielectric constant and thickness of the films are studied as a function of Tb{sup 3+} doping concentration. The photoluminescence spectra of the Tb{sup 3+} doped ZnO films recorded using an excitation radiation of wavelength 325 nm from a He-Cd laser exhibit visible luminescence ~430, 490, 516 and 542 nm. The origin of visible emissions ~490 and 542 nm in the doped films can be attributed to 5D{sub 4}→7F{sub 6} and 5D{sub 4}→7F{sub 5} transition of Tb{sup 3+} ion respectively. The intensity of the emission at 542 nm is found to be decreasing at higher doping concentration due to concentration quenching effect. The blue emission in the films can be attributed to the electron transition from shallow donor level formed by interstitial Zn atoms to the top of the valence band. The origin of the visible emission ~516 nm is attributed

  2. Improvement of transistor characteristics and stability for solution-processed ultra-thin high-valence niobium doped zinc-tin oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Jeng, Jiann-Shing, E-mail: jsjeng@mail.nutn.edu.tw

    2016-08-15

    Nb-doped Zinc tin oxide (NZTO) channel materials have been prepared by solution process in combination with the spin-coating method. All NZTO thin film transistors (TFTs) are n-type enhancement-mode devices, either without or with Nb additives. High-valence niobium ion (ionic charge = +5) has a larger ionic potential and similar ionic radius to Zn{sup 2+} and Sn{sup 4+} ions. As compared with the pure ZTO device, introducing Nb{sup 5+} ions into the ZTO channel layers can improve the electrical properties and bias stability of TFTs because of the reduction of the oxygen vacancies. This study discusses the connection among the material properties of the NZTO films and the electrical performance and bias stability of NZTO TFTs and how they are influenced by the Nb/(Nb + Sn) molar ratios of NZTO films. - Highlights: • Ultra-thin high-valence niobium doped zinc-tin oxide (NZTO) thin films are prepared using a solution process. • Nb dopants in ZTO films reduce the oxygen vacancy and subgap adsorption of the ZTO films. • The Nb-doping concentration of the NZTO channel layer has a strong influence on the TFT performance.

  3. Sol-gel derived zinc oxide films alloyed with cobalt and aluminium

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Mamta [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110 021 (India); Mehra, R.M., E-mail: rammehra2003@yahoo.co [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110 021 (India)

    2010-05-03

    ZnO films codoped with 5 at.% Co and 1 at.% Al were prepared by sol-gel technique on corning glass and silicon substrates with precursor sols of different pH values. The pH was varied from 5.4 to 11 by adding varying amounts of monoethanolamine to the sol. Since pH plays an important role in controlling the properties of films, we discuss in detail the effect of pH value on the structural, morphological and optical properties of the grown films. X-ray diffraction and atomic force microscopy images reveal that the size of crystallites increases with pH of the sol. The variation of pH in the reaction system influences the density of homogeneous nucleation and the crystal growth along the c-axis. High quality Co and Al codoped ZnO films annealed at 600 {sup o}C have been obtained using a sol with pH = 9. These sol-gel derived films find their suitability to be used as dilute magnetic semiconductors.

  4. Sol-gel derived zinc oxide films alloyed with cobalt and aluminium

    International Nuclear Information System (INIS)

    Sharma, Mamta; Mehra, R.M.

    2010-01-01

    ZnO films codoped with 5 at.% Co and 1 at.% Al were prepared by sol-gel technique on corning glass and silicon substrates with precursor sols of different pH values. The pH was varied from 5.4 to 11 by adding varying amounts of monoethanolamine to the sol. Since pH plays an important role in controlling the properties of films, we discuss in detail the effect of pH value on the structural, morphological and optical properties of the grown films. X-ray diffraction and atomic force microscopy images reveal that the size of crystallites increases with pH of the sol. The variation of pH in the reaction system influences the density of homogeneous nucleation and the crystal growth along the c-axis. High quality Co and Al codoped ZnO films annealed at 600 o C have been obtained using a sol with pH = 9. These sol-gel derived films find their suitability to be used as dilute magnetic semiconductors.

  5. Polylactic acid/zinc oxide biocomposite films for food packaging application.

    Science.gov (United States)

    Marra, Antonella; Silvestre, Clara; Duraccio, Donatella; Cimmino, Sossio

    2016-07-01

    Although PLA is much more expensive than polyolefins, such as PP and PE, there is a great interest to propose PLA based material as alternative films for food packaging being PLA derivable from natural source, compostable and biodegradable. For this purpose the research has the task to investigate and propose PLA materials with enhanced properties to be effectively and efficiently alternative to polyolefin films for food packaging application. In this contribution, biocomposite films of PLA with 1, 3 and 5wt% of ZnO have been investigated to determine mechanical, barrier and antimicrobial (against Escherichia coli) properties. It is found that the biocomposite films are characterized by a good dispersion of the ZnO particles in PLA matrix, although no previous treatment was performed on ZnO particles, such as silanization, to decrease its incompatibility with the polymer. The biocomposite films have shown good mechanical properties, decrease of permeability to CO2 and O2, and only a slight increase to water vapour. Particularly important is that, for the biocomposite with 5wt% of ZnO, the % Reduction for E. Coli test reached the value of 99.99 already after 24h. Copyright © 2016 Elsevier B.V. All rights reserved.

  6. Preparation and characterization of bionanocomposite film based ontapioca starch/bovine gelatin/nanorod zinc oxide

    DEFF Research Database (Denmark)

    Mehdi Marvizadeh, Mohammad; Oladzadabbasabadi, Nazila; Mohammadi Nafchi, Abdorreza

    2017-01-01

    , as well as the barrier properties of bionanocomposite films were investigated. X-ray diffraction analysis showed that the bionanocomposite film incorporated with ZnOsingle bondN at a concentration of 3.5% w/w exhibited high intensity peaks compared with control samples. Results of UV–vis spectra analysis......To exploring a nano-packaging materials for using as coating or edible films, tapioca starch/gelatin/nanorod ZnO (ZnOsingle bondN) bionanocomposites were prepared via solution casting technique. The effects of nanofiller addition on the mechanical, physicochemical, and crystalline structures...... showed that incorporation of ZnOsingle bondN into the films can absorb the whole UV light. Tensile strength of the films was increased from 14 to 18 MPa whereas elongation at breaks decreased from 18 to 8 percent and oxygen permeability decreased from 151.03 to 91.52 cm3 μm/(m2–day) by incorporation of 3...

  7. Solution-Processed Inorganic Thin Film Transistors Fabricated from Butylamine-Capped Indium-Doped Zinc Oxide Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Hien Thu; Jeong, Hyundam [Chonnam National Univ., Gwangju (Korea, Republic of)

    2014-02-15

    Indium-doped zinc oxide nanocrystals (IZO NCs), capped with stearic acid (SA) of different sizes, were synthesized using a hot injection method in a noncoordinating solvent 1-octadecene (ODE). The ligand exchange process was employed to modify the surface of IZO NCs by replacing the longer-chain ligand of stearic acid with the shorter-chain ligand of butylamine (BA). It should be noted that the ligand-exchange percentage was observed to be 75%. The change of particle size, morphology, and crystal structures were obtained using a field emission scanning electron microscope (FE-SEM) and X-ray diffraction pattern results. In our study, the 5 nm and 10 nm IZO NCs capped with stearic acid (SA-IZO) were ligand-exchanged with butylamine (BA), and were then spin-coated on a thermal oxide (SiO{sub 2}) gate insulator to fabricate a thin film transistor (TFT) device. The films were then annealed at various temperatures: 350 .deg. C, 400 .deg. C, 500 .deg. C, and 600 .deg. C. All samples showed semiconducting behavior and exhibited n-channel TFT{sup -} Curing temperature dependent on mobility was observed. Interestingly, mobility decreases with the increasing size of NCs from 5 to 10 nm. Miller-Abrahams hopping formalism was employed to explain the hopping mechanism insight our IZO NC films. By focusing on the effect of size, different curing temperatures, electron coupling, tunneling rate, and inter-NC separation, we found that the decrease in electron mobility for larger NCs was due to smaller electronic coupling.

  8. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.

    Science.gov (United States)

    Park, Soyeon; Bang, Seokhwan; Lee, Seungjun; Park, Joohyun; Ko, Youngbin; Jeon, Hyeongtag

    2011-07-01

    In this study, the effects of different annealing conditions (air, O2, N2, vacuum) on the chemical and electrical characteristics of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFT) were investigated. The contact resistance and interface properties between the IGZO film and the gate dielectric improved after an annealing treatment. However, the chemical bonds in the IGZO bulk changed under various annealing atmospheres, which, in turn, altered the characteristics of the TFTs. The TFTs annealed in vacuum and N2 ambients exhibited undesired switching properties due to the high carrier concentration (>10(17) cm(-3)) of the IGZO active layer. In contrast, the IGZO TFTs annealed in air and oxygen ambients displayed clear transfer characteristics due to an adequately adjusted carrier concentration in the operating range of the TFT. Such an optimal carrier concentration arose through the stabilization of unstable chemical bonds in the IGZO film. With regard to device performance, the TFTs annealed in O2 and air exhibited saturation mobility values of 8.29 and 7.54 cm2/Vs, on-off ratios of 7.34 x 10(8) and 3.95 x 10(8), and subthreshold swing (SS) values of 0.23 and 0.19 V/decade, respectively. Therefore, proper annealing ambients contributed to internal modifications in the IGZO structure and led to an enhancement in the oxidation state of the metal. As a result, defects such as oxygen vacancies were eliminated. Oxygen annealing is thus effective for controlling the carrier concentration of the active layer, decreasing electron traps, and enhancing TFT performance.

  9. Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Fan, J. C.; Zhu, C. Y.; Fung, S.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Skorupa, W.; Anwand, W.

    2009-01-01

    As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ∼400 deg. C, the films changed from n type to p type. Hole concentration and mobility of ∼6x10 17 cm -3 and ∼6 cm 2 V -1 s -1 were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the As Zn -2V Zn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

  10. Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

    Science.gov (United States)

    Fan, J. C.; Zhu, C. Y.; Fung, S.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Anwand, W.; Skorupa, W.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C.

    2009-10-01

    As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ˜400 °C, the films changed from n type to p type. Hole concentration and mobility of ˜6×1017 cm-3 and ˜6 cm2 V-1 s-1 were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the AsZn-2VZn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.

  11. Experimental Investigation of Zinc Antimonide Thin Films under Different Thermal Boundary Conditions

    DEFF Research Database (Denmark)

    Mir Hosseini, Seyed Mojtaba; Rosendahl, Lasse Aistrup; Rezaniakolaei, Alireza

    for all cases, showing that the electrical potential difference is increasing by temperature for all cases with the same slope. Also the value of Seebeck coefficient (α) is almost constant for all cases. The obtained value of α can compete with developed bulk TEG materials in literature. The thin film...... is able to operate in relatively high range of temperature with long working period without failure. Furthermore, effects of implementing thermal cycling on stability analysis of a TEG sample are considered. By testing the thermoelectric thin film specimen during a thermal cycling, behavior of the TEG...

  12. Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan, E-mail: byungdu.ahn@samsung.com, E-mail: drlife@kookmin.ac.kr [School of Electrical Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Lim, Jun-Hyung; Lee, Je-Hun; Ahn, Byung Du, E-mail: byungdu.ahn@samsung.com, E-mail: drlife@kookmin.ac.kr [Samsung Display Co., Ltd., Yongin, Gyeonggi-Do 446-711 (Korea, Republic of); Kim, Yong-Sung [Korea Research Institute of Standards and Science, Yuseong, Daejeon 305-340 (Korea, Republic of)

    2014-10-13

    The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy V{sub O}{sup 2+} or peroxide O{sub 2}{sup 2−} with the increase of EOT. It was also found that the V{sub O}{sup 2+}-related extrinsic factor accounts for 80%–92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O{sub 2}{sup 2–} related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

  13. Fabrication of layered hydroxide zinc nitrate films and their conversion to ZnO nanosheet assemblies for use in dye-sensitized solar cells

    Directory of Open Access Journals (Sweden)

    Takuya Yuki

    2015-03-01

    Full Text Available Layered hydroxide zinc nitrate (LHZN; Zn5(NO32(OH8·xH2O films were fabricated on glass or plastic substrates by a chemical bath deposition method combined with a homogeneous precipitation in methanolic solutions. High- or low-temperature pyrolytic decomposition of the LHZN films having two-dimensional morphology was attempted to obtain porous ZnO nanosheet-assembly films. The LHZN films were converted into porous ZnO films by pyrolyzing at temperatures above 400 °C, while porous LHZN/ZnO hybrid films were obtained by pyrolyzing at a lower temperature of 120 °C without morphological changes. The pyrolyzed ZnO films were applied to dye-sensitized solar cells (DSSCs, resulting in the generation of relatively high open-circuit voltages. The low-temperature pyrolysis enabled us to fabricate the LHZN/ZnO film even on the plastic substrate. Actually a cell using the LHZN/ZnO film on an indium tin oxide-coated polyethylene naphthalate substrate showed an energy conversion efficiency of 2.08% with a high open-circuit voltage around 0.70 V.

  14. Synthesis of nanocrystalline nickel-zinc ferrite (Ni0.8Zn0.2Fe2O4) thin films by chemical bath deposition method

    International Nuclear Information System (INIS)

    Pawar, D.K.; Pawar, S.M.; Patil, P.S.; Kolekar, S.S.

    2011-01-01

    Graphical abstract: Display Omitted Research highlights: → We have successfully synthesized nickel-zinc ferrite (Ni 0.8 Zn 0.2 Fe 2 O 4 ) thin films on stainless steel substrates using a low temperature chemical bath deposition method. → The surface morphological study showed the compact flakes like morphology. → The as-deposited thin films are hydrophilic (10 o o ) whereas the annealed thin films are super hydrophilic (θ o ) in nature. → Ni 0.8 Zn 0.2 Fe 2 O 4 thin films could be used in supercapacitor. - Abstract: The nickel-zinc ferrite (Ni 0.8 Zn 0.2 Fe 2 O 4 ) thin films have been successfully deposited on stainless steel substrates using a chemical bath deposition method from alkaline bath. The films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), static water contact angle and cyclic voltammetry measurements. The X-ray diffraction pattern shows that deposited Ni 0.8 Zn 0.2 Fe 2 O 4 thin films were oriented along (3 1 1) plane. The FTIR spectra showed strong absorption peaks around 600 cm -1 which are typical for cubic spinel crystal structure. SEM study revealed compact flakes like morphology having thickness ∼1.8 μm after air annealing. The annealed films were super hydrophilic in nature having a static water contact angle (θ) of 5 o .The electrochemical supercapacitor study of Ni 0.8 Zn 0.2 Fe 2 O 4 thin films has been carried out in 6 M KOH electrolyte. The values of interfacial and specific capacitances obtained were 0.0285 F cm -2 and 19 F g -1 , respectively.

  15. Continuous fabrication of a MnS/Co nanofibrous air electrode for wide integration of rechargeable zinc-air batteries.

    Science.gov (United States)

    Wang, Yang; Fu, Jing; Zhang, Yining; Li, Matthew; Hassan, Fathy Mohamed; Li, Guang; Chen, Zhongwei

    2017-10-26

    Exploring highly efficient bifunctional electrocatalysts toward the oxygen reduction and evolution reactions is essential for the realization of high-performance rechargeable zinc-air batteries. Herein, a novel nanofibrous bifunctional electrocatalyst film, consisting of metallic manganese sulfide and cobalt encapsulated by nitrogen-doped carbon nanofibers (CMS/NCNF), is prepared through a continuous electrospinning method followed by carbonization treatment. The CMS/NCNF bifunctional catalyst shows both comparable ORR and OER performances to those of commercial precious metal-based catalysts. Furthermore, the free-standing CMS/NCNF fibrous thin film is directly used as the air electrode in a solid-state zinc-air battery, which exhibits superior flexibility while retaining stable battery performance at different bending angles. This study provides a versatile design route for the rational design of free-standing bifunctional catalysts for direct use as the air electrode in rechargeable zinc-air batteries.

  16. Electrochemically self-assembled mesoporous dye-modified zinc oxide thin films

    Czech Academy of Sciences Publication Activity Database

    Rathouský, Jiří; Loewenstein, T.; Nonomura, K.; Yoshida, T.; Wark, M.; Schlettwein, D.

    2005-01-01

    Roč. 156, - (2005), s. 315-320 ISSN 0167-2991 Institutional research plan: CEZ:AV0Z40400503 Keywords : adsorption * physical chemistry * film preparation Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 0.307, year: 2005

  17. Modification of physical properties of sputtered zinc oxide thin films by introduction of gallium and nitrogen

    International Nuclear Information System (INIS)

    Shtereva, K.; Tvarozek, V.; Novotny, I.; Flickyngerova, S.; Milosavljevic, M.; Sutta, P.

    2011-01-01

    The physical properties of polycrystalline sputtered ZnO:Ga thin films were modified by implantation of N + ions with energy of 180 keV and doses ranging from 1x10 15 to 2x10 16 ions/cm 2 . As-deposited samples implanted with low N + doses showed unstable p-type behavior, while those implanted with higher doses were n-type. The higher resistivity in implanted samples resulted from the formation of NO acceptors that partly compensate donor defects in the film, and the damage caused by ion implantation. All samples became n-type after annealing treatment in O 2 and their resistivity is decreased by more than an order of magnitude. XRD patterns revealed preferential growth in the (002) direction in ZnO:Ga:N films. The optical properties are closely related to microstructure and electrical properties of the films. Blue shift of the band edge for annealed ZnO:Ga:N samples compared to as deposited ones, is consistent with the increase in carrier concentration. (authors)

  18. Transparent conducting zinc oxide thin film prepared by off-axis rf ...

    Indian Academy of Sciences (India)

    Unknown

    and pestle. The powder was pressed and sintered at. 900°C for 10 h in air with a intermediate grinding. Two types of targets, one pure ZnO, and another with 2% of. Al were used for the deposition of the films. Before ... lysed using an X-ray diffractometer. Electron probe micro analysis (EPMA) was used to analyse the actual.

  19. Effect of zinc addition on properties of cadmium sulfide layer and performance of Cu(In,Ga)Se{sub 2} solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Bae, Dowon, E-mail: bae.dowon@yahoo.co.kr; Gho, Junghwan; Shin, Minjung; Kwon, Sehan

    2013-05-01

    Cd{sub (1−x)}Zn{sub x}S (CdS:Zn) thin films were grown on an indium tin oxide-coated glass substrate and Cu(In,Ga)Se{sub 2} (CIGS) surface by chemical bath deposition for solar cell applications, and their composition, and optical properties were studied to decide the optimum process conditions for buffer layer growth. The average conversion efficiency of CIGS solar panels (24-in.) with the CdS:Zn layer was 0.35% higher than that of conventional solar panels mainly because of the increased open-circuit voltage. This efficiency improvement was not due to modification of the optical properties of the buffer layer, but due to the change in the deposition rate during buffer layer growth. - Highlights: ► CdS:Zn buffer layers were fabricated for Cu(In,Ga)Se{sub 2} (CIGS) photovoltaic (PV) panels. ► Composition of buffer layers on indium–tin–oxide (ITO) and CIGS was investigated. ► Transmittance of CdS:Zn on ITO coated glass showed 5% higher than CdS. ► Efficiency of CdS:Zn solution adopted panels showed 0.47% higher than that with CdS. ► However, it was revealed that only Cd and S ions were found at the surface of CIGS.

  20. Effect of zinc addition on properties of cadmium sulfide layer and performance of Cu(In,Ga)Se2 solar cell

    International Nuclear Information System (INIS)

    Bae, Dowon; Gho, Junghwan; Shin, Minjung; Kwon, Sehan

    2013-01-01

    Cd (1−x) Zn x S (CdS:Zn) thin films were grown on an indium tin oxide-coated glass substrate and Cu(In,Ga)Se 2 (CIGS) surface by chemical bath deposition for solar cell applications, and their composition, and optical properties were studied to decide the optimum process conditions for buffer layer growth. The average conversion efficiency of CIGS solar panels (24-in.) with the CdS:Zn layer was 0.35% higher than that of conventional solar panels mainly because of the increased open-circuit voltage. This efficiency improvement was not due to modification of the optical properties of the buffer layer, but due to the change in the deposition rate during buffer layer growth. - Highlights: ► CdS:Zn buffer layers were fabricated for Cu(In,Ga)Se 2 (CIGS) photovoltaic (PV) panels. ► Composition of buffer layers on indium–tin–oxide (ITO) and CIGS was investigated. ► Transmittance of CdS:Zn on ITO coated glass showed 5% higher than CdS. ► Efficiency of CdS:Zn solution adopted panels showed 0.47% higher than that with CdS. ► However, it was revealed that only Cd and S ions were found at the surface of CIGS

  1. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    Science.gov (United States)

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

    2012-06-01

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

  2. Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

    Directory of Open Access Journals (Sweden)

    Franklin Che

    Full Text Available We have experimentally measured the surface second-harmonic generation (SHG of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver. Keywords: Surface second-harmonic generation, Nonlinear optics, Metal thin films

  3. Polar and Nonpolar Gallium Nitride and Zinc Oxide based thin film heterostructures Integrated with Sapphire and Silicon

    Science.gov (United States)

    Gupta, Pranav

    Raman characterization confirmed the GaN thin films grew nearly relaxed. The chemistry between the TiN and GaN permits two-dimensional growth which has been confirmed by RHEED and AFM. The planar misfit for the GaN growth on TiN is ˜6.48%. TEM characterization was performed and mechanism of relaxation via planar matching was investigated. In addition, TiN being a strong Si diffusion barrier reduces the GaN stress occurring due to unintentional Si doping which is typically observed in AlN system and therefore eliminates the requirement of complex strain management techniques. This work demonstrates the thermal strain engineering coupled with large lattice mismatch and strong diffusion barrier properties in the case of TiN as buffer layer can be used to grow good quality 2-dimensional relaxed GaN thin films on Si(111). Epitaxial growth of c-plane ZnO(0001) has been demonstrated on the Si(001) by using TiN as an intermediate buffer layer. Because of different out of plane symmetry of the substrate (Si/TiN) and the film (ZnO), two orientation of ZNO domains were obtained and the ZnO film growth is of bi-epitaxial nature. The ZnO thin film was observed to be nearly strain relaxed from X-ray and Raman measurements. The interface between the ZnO and TiN was investigated by TEM. Reaction at ZnO/TiN interface at higher growth temperature causing zinc titanate formation was observed. The grain boundary structure between the observed domains investigated by STEM, revealed the ZnO (0001) planes to be contiguous across the grain boundary which is significant from the perspective of conduction electron scattering. In this configuration the TiN (being electrically conductive) can be effectively used as an electrode for novel device applications (like LEDs) integrated on Si(100) substrate. Non-polar orientation of m-plane (10-10) ZnO and GaN thin films have been successfully integrated with technologically important Si(001) substrate using MgO and TiN buffer layers. The epitaxy of the

  4. Defect mediated reversible ferromagnetism in Co and Mn doped zinc oxide epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Mal, Siddhartha; Nori, Sudhakar; Narayan, J. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Mula, Suhrit [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Department of Metallurgical and Materials Engineering, National Institute of Technology, Rourkela 769008 (India); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)

    2012-12-01

    We have introduced defects in ZnO (undoped and doped with Co and Mn) epitaxial thin films using laser irradiation from nanosecond laser pulses and thermal annealing in oxygen ambient. In contrast to the as grown samples, the laser irradiated films show a significant increase in conductivity, enhancement in UV emission, while maintaining the same wurtzite crystal structure. Room-temperature ferromagnetism (RTFM) is observed in laser-irradiated samples, which increased with the number of laser pulses up to a certain value where magnetic moment saturates. The induced ferromagnetism as well as the enhanced electrical conductivity can be reversed with thermal annealing in oxygen ambient. The magnetization in Co and Mn doped films was found to be strong function of growth conditions and defect concentration. X-ray diffraction and optical absorption experiments suggested a 2+ valance state and tetrahedral coordination for both Co and Mn ions. There is a simultaneous increase in n-type electrical conductivity with the number of laser pulses and continue to exhibit semiconducting behavior in both undoped and doped films. The saturation magnetization was found to be 0.08 {mu}{sub B}/Co and 0.05 {mu}{sub B}/Mn, much lower than 3.0 {mu}{sub B}/Co and 5.0 {mu}{sub B}/Mn, indicating the prominent role of intrinsic defects in RTFM with some contribution from Co{sup 2+}-oxygen vacancy complexes. We propose a unified mechanism based upon introduction of intrinsic defects to explain RTFM and n-type conductivity enhancements during pulsed laser and thermal annealing.

  5. Interfacial reactions between thin films of zinc and (100) InP

    International Nuclear Information System (INIS)

    Kaminska, E.; Piotrowska, A.; Barcz, A.; Mizera, E.; Dynowska, E.

    1995-01-01

    The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition and to form an ohmic contact when deposited on highly doped n-type InP. Heat treatment causes the formation of Zn 3 P 2 phase lattice matched to InP. (author)

  6. The growth of zinc phthalocyanine thin films by pulsed laser deposition

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Šebera, Jakub; Bensalah-Ledoux, A.; Guy, S.; Bulíř, Jiří; Fitl, Přemysl; Vlček, Jan; Zákutná, D.; Marešová, Eva; Hubík, Pavel; Kratochvílová, Irena; Vrňata, M.; Lančok, Ján

    2016-01-01

    Roč. 31, č. 1 (2016), s. 163-172 ISSN 0884-2914 R&D Projects: GA MŠk(CZ) LM2011029; GA ČR(CZ) GA14-10279S; GA MŠk(CZ) 7AMB14FR010 Institutional support: RVO:68378271 Keywords : organometallic * film * laser ablation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.673, year: 2016

  7. Properties of Co-deposited indium tin oxide and zinc oxide films using a bipolar pulse power supply and a dual magnetron sputter source

    International Nuclear Information System (INIS)

    Hwang, Man-Soo; Seob Jeong, Heui; Kim, Won Mok; Seo, Yong Woon

    2003-01-01

    Multilayer coatings consisting of metal layers sandwiched between transparent conducting oxide layers are widely used for flat panel display electrodes and electromagnetic shield coatings for plasma displays, due to their high electrical conductivity and light transmittance. The electrical and optical properties of these multilayer films depend largely on the surface characteristics of the transparent conducting oxide thin films. A smoother surface on the transparent conducting oxide thin films makes it easier for the metal layer to form a continuous film, thus resulting in a higher conductivity and visible light transmittance. Indium tin oxide (ITO) and zinc oxide (ZnO) films were co-deposited using a dual magnetron sputter and a bipolar pulse power supply to decrease the surface roughness of the transparent conducting oxide films. The symmetric pulse mode of the power supply was used to simultaneously sputter an In 2 O 3 (90 wt %) : SnO 2 (10 wt %) target and a ZnO target. We varied the duty of the pulses to control the ratio of ITO : ZnO in the thin films. The electrical and optical properties of the films were studied, and special attention was paid to the surface roughness and the crystallinity of the films. By co-depositing ITO and ZnO at a pulse duty ratio of ITO:ZnO=45:45 using a dual magnetron sputter and a bipolar pulse power supply, we were able to obtain amorphous transparent conducting oxide films with a very smooth surface which had a Zn-rich buffer layer under a In-rich surface layer. All of the films exhibited typical electrical and optical properties of transparent conducting oxide films deposited at room temperature

  8. Defect-mediated magnetism of transition metal doped zinc oxide thin films

    Science.gov (United States)

    Roberts, Bradley Kirk

    Magnetism in transition metal doped wide band-gap materials is of interest to further the fundamental science of materials and future spintronics applications. Large inter-dopant separations require mediation of ferromagnetism by some method; carrier-mediated mechanisms are typically applicable to dilute magnetic semiconductors with low Curie temperatures. Dilute magnetic oxides, commonly with poor conductivity and TC above room temperature, cannot be described within this theory. Recent experiment and theory developments suggest that ferromagnetic exchange in these materials can be mediated by defects. This research includes experimental results justifying and developing this approach. Thin films of Cr doped ZnO (band gap ˜3.3 eV) were deposited with several processing variations to enhance the effects of either 0-dimensional (vacancy, hydrogen-related defect) or two-dimensional defects (surface/interface) and thereby affect magnetism and conductivity. We observe surface magnetism in dielectric thin films of oxygen-saturated ZnO:Cr with spontaneous magnetic moment and conductance dropping approximately exponentially with increasing thickness. Uniform defect concentrations would not result in such magnetic ordering behavior indicating that magnetism is mediated either by surface defects or differing concentrations of point defects near the surface. Polarized neutron reflectivity profiling confirms a magnetically active region of ˜8 nm at the film surface. Hydrogen is notoriously present as a defect and carrier dopant in ZnO, and artificial introduction of hydrogen in dielectric ZnO:Cr films results in varying electronic and magnetic behavior. Free carriers introduced with hydrogen doping are not spin-polarized requiring an alternative explanation for ferromagnetism. We find from positron annihilation spectroscopy measurements that hydrogen doping increases the concentration of an altered VZn-related defect (a preliminary interpretation) throughout the film, which

  9. Photoluminescence spectral study of single cadmium selenide/zinc sulfide colloidal nanocrystals in poly(methyl methacrylate) and quantum dots molecules

    Science.gov (United States)

    Shen, Yaoming

    Quantum dots (QDs)and Nano-crystals (NCs) have been studies for decades. Because of the nanoscale quantum confinement, delta shape like energy density states and narrowband emitters properties, they hold great promise for numerous optoelectronics and photonics applications. They could be used for tunable lasers, white LED, Nano-OLED, non-volatile memory and solar cells. They are also the most promising candidates for the quantum computing. The benefits for NCs over QDs is that NCs can be incorporated into a variety of polymers as well as thin films of bulk semiconductors. These exceptional flexibility and structural control distinguish NCs from the more traditional QD structures fabricated using epitaxial growth techniques. In my research of work, I studied the photoluminescence (PL) and absorption character of ensemble NCs incorporated in Polymethyl methacrylate (PMMA). To understand the behavior of the NCs in PMMA, it is important to measure a singe NC to avoid the inhomogenous broading of many NCs. So I particularly studied the behavior of a single NC in PMMA matrix. A microphotoluminescence setup to optically isolate a single nanocrystal is used. Random spectral shift and blinking behavior (on and off) are found. Addition to that, two color spectral shifting, is a major phenomena found in the system. Other interesting results such as PL intensity changes (decreasing or increasing with time) and quenching effect are observed and explained too. From the correlation function, we can distinguish the phonon replicas. The energy of these phonons can be calculated very accurately from the experiment result. The Huang-Rhys factors can be estimated too. Self-assembled semiconductor quantum dots (QDs), from highly strained-layer heteroepitaxy in the Stranski-Krastanow (S-K) growth mode, have been intensively studied because of the delta-function-like density of states, which is significant for optoelectronic applications. Spontaneous formation of semiconductor quantum

  10. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  11. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    Directory of Open Access Journals (Sweden)

    Minkyu Chun

    2015-05-01

    Full Text Available We investigated the effects of top gate voltage (VTG and temperature (in the range of 25 to 70 oC on dual-gate (DG back-channel-etched (BCE amorphous-indium-gallium-zinc-oxide (a-IGZO thin film transistors (TFTs characteristics. The increment of VTG from -20V to +20V, decreases the threshold voltage (VTH from 19.6V to 3.8V and increases the electron density to 8.8 x 1018cm−3. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on VTG. At VTG of 20V, the mobility decreases from 19.1 to 15.4 cm2/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at VTG of - 20V, the mobility increases from 6.4 to 7.5cm2/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  12. Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Um, Jae Gwang; Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); Migliorato, Piero [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); Electrical Engineering Division, Department of Engineering, Cambridge University, Cambridge CB3 0FA (United Kingdom)

    2015-06-21

    We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length L{sub D} ∼ L{sub n} ∼ 10-μm, the latter being the electron diffusion length. The model also shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS.

  13. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Ho-young [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong [LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

    2014-01-13

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10{sup −3} Ω cm after treatment, and then it increases to 7.92 × 10{sup −2} Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm{sup 2}/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300 °C annealing.

  14. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2015-05-15

    We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  15. Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Kwang-Won; Cho, Won-Ju, E-mail: chowj@kw.ac.kr [Department of Electronic Materials Engineering, Kwangwoon University, 447-1, Wolgye-dong, Nowon-gu, Seoul 139-701 (Korea, Republic of)

    2014-11-24

    In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (ΔV{sub ON}) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristic trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress.

  16. Inert gas annealing effect in solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

    Science.gov (United States)

    Lee, Seungwoon; Jeong, Jaewook

    2017-08-01

    In this paper, the annealing effect of solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs), under ambient He (He-device), is systematically analyzed by comparison with those under ambient O2 (O2-device) and N2 (N2-device), respectively. The He-device shows high field-effect mobility and low subthreshold slope owing to the minimization of the ambient effect. The degradation of the O2- and N2-device performances originate from their respective deep acceptor-like and shallow donor-like characteristics, which can be verified by comparison with the He-device. However, the three devices show similar threshold voltage instability under prolonged positive bias stress due to the effect of excess oxygen. Therefore, annealing in ambient He is the most suitable method for the fabrication of reference TFTs to study the various effects of the ambient during the annealing process in solution-processed a-IGZO TFTs.

  17. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    International Nuclear Information System (INIS)

    Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

    2014-01-01

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n + a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10 −3 Ω cm after treatment, and then it increases to 7.92 × 10 −2 Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n + a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n + a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm 2 /V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H 2 plasma treatment degrades significantly after 300 °C annealing

  18. Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy

    Science.gov (United States)

    Chen-Fei, Wu; Yun-Feng, Chen; Hai, Lu; Xiao-Ming, Huang; Fang-Fang, Ren; Dun-Jun, Chen; Rong, Zhang; You-Dou, Zheng

    2016-05-01

    In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain (S/D) series resistance in operating amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metal-semiconductor junction. Project supported by the Key Industrial R&D Program of Jiangsu Province, China (Grant No. BE2015155), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. 021014380033).

  19. Micro-nano zinc oxide film fabricated by biomimetic mineralization: Designed architectures for SERS substrates

    Science.gov (United States)

    Lu, Fei; Guo, Yue; Wang, Yunxin; Song, Wei; Zhao, Bing

    2018-05-01

    In this study, we have investigated the effect of the surface morphologies of the zinc oxide (ZnO) substrates on surface enhanced Raman spectroscopy (SERS). During synthetic process, the self-assembly monolayers (SAMs) with different terminal groups are used as templates to induce the nucleation and growth of Zn(NO3)2·6H2O crystals, then different morphologies micro-nano ZnO powders are obtained by annealing Zn(NO3)2·6H2O crystals at 450 °C. The products obtained at different conditions are characterized by means of X-ray diffraction (XRD) patterns, scanning electron microscopy (SEM) and Raman spectra. The as-prepared ZnO micro-sized particles have been used the efficient Surface enhanced Raman scattering (SERS) substrates, and the SERS signals of 4-mercaptopyridine (Mpy) probe molecules are much influenced by the morphologies of the ZnO structures. Results indicated that the more (0001) facets appear in the of ZnO morphology, the greater degree of charge-transfer (PCT) for the SERS enhancement on the surface of semiconductors is achieved. The chemical interaction between ZnO structures and Mpy molecules plays a very important role in the SERS enhancement.

  20. Effects of concentration of reduced graphene oxide on properties of sol–gel prepared Al-doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Ching-Tian; Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw; Chen, Wei-Chun

    2016-04-30

    Reduced-graphene-oxide-incorporated aluminum-doped zinc oxide (AZO:rGO) composite thin films were synthesized on glass substrates by using the sol–gel method. The effect of the rGO concentration (0–3 wt%) on structural, electrical, and optical properties of the composite film was investigated by X-ray diffraction, scanning electron microscopy, atomic force microscopy, Hall-effect measurement, and ultraviolet–visible spectrometry. All of the composite films showed a typical hexagonal wurtzite structure, and the films incorporated with 1 wt% rGO showed the highest (0 0 2) peak intensity. The sheet resistance of the films was effectively reduced by a factor of more than two as the rGO ratio increased from 0 to 1 wt%. However, the sheet resistance increased with a further increase in the rGO ratio. The optical transmittance of the composite film monotonically decreased with increasing the rGO ratio from 0 to 3 wt%. The average optical transmittance (400–700 nm) of the AZO:rGO thin film within 1 wt% rGO was above 81%. - Highlights: • Reduced-graphene-oxide-doped ZnO:Al composite films are synthesized by sol–gel. • All AZO:rGO thin films show a typical hexagonal wurtzite structure. • Sheet resistance of AZO:rGO(1 wt%) film decreases by a factor of more than two. • The average visible transmittance of the AZO:rGO(1 wt%) film was 81%.

  1. Ellipsometry study of process deposition of amorphous Indium Gallium Zinc Oxide sputtered thin films

    International Nuclear Information System (INIS)

    Talagrand, C.; Boddaert, X.; Selmeczi, D.G.; Defranoux, C.; Collot, P.

    2015-01-01

    This paper reports on an InGaZnO optical study by spectrometric ellipsometry. First of all, the fitting results of different models and different structures are analysed to choose the most appropriate model. The Tauc–Lorentz model is suitable for thickness measurements but a more complex model allows the refractive index and extinction coefficient to be extracted more accurately. Secondly, different InGaZnO process depositions are carried out in order to investigate stability, influence of deposition time and uniformity. Films present satisfactory optical stability over time. InGaZnO optical property evolution as a function of deposition time is related to an increase in temperature. To understand the behaviour of uniformity, mapping measurements are correlated to thin film resistivity. Results show that temperature and resputtering are the two phenomena that affect IGZO uniformity. - Highlights: • Model and structure are investigated to fit IGZO ellipsometric angles. • Maximum refractive index rises with substrate temperature and thus deposition time. • Resputtering leads to inhomogeneity in IGZO electrical and optical properties

  2. Mechanism of polarization switching in wurtzite-structured zinc oxide thin films

    Science.gov (United States)

    Konishi, Ayako; Ogawa, Takafumi; Fisher, Craig A. J.; Kuwabara, Akihide; Shimizu, Takao; Yasui, Shintaro; Itoh, Mitsuru; Moriwake, Hiroki

    2016-09-01

    The properties of a potentially new class of ferroelectric materials based on wurtzite-structured ZnO thin films are examined using the first-principles calculations. Theoretical P-E hysteresis loops were calculated using the fixed-D method for both unstrained and (biaxially) strained single crystals. Ferroelectric polarization switching in ZnO (S.G. P63mc) is shown to occur via an intermediate non-polar structure with centrosymmetric P63/mmc symmetry by displacement of cations relative to anions in the long-axis direction. The calculated coercive electric field (Ec) for polarization switching was estimated to be 7.2 MV/cm for defect-free monocrystalline ZnO. During switching, the short- and long-axis lattice parameters expand and contract, respectively. The large structural distortion required for switching may explain why ferroelectricity in this compound has not been reported experimentally for pure ZnO. Applying an epitaxial tensile strain parallel to the basal plane is shown to be effective in lowering Ec during polarization, with a 5% biaxial expansion resulting in a decrease of Ec to 3.5 MV/cm. Comparison with calculated values for conventional ferroelectric materials suggests that the ferroelectric polarization switching of wurtzite-structured ZnO may be achievable by preparing high-quality ZnO thin films with suitable strain levels and low defect concentrations.

  3. Nanostructured zinc oxide thin film for application to surface plasmon resonance based cholesterol biosensor

    Science.gov (United States)

    Kaur, Gurpreet; Tomar, Monika; Gupta, Vinay

    2015-11-01

    ZnO thin film was deposited on gold coated glass prism by RF sputtering technique in glancing angle deposition (GLAD) configuration. The structural, morphological and optical properties of the deposited film were investigated using X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and Fourier Transform Infrared (FTIR) Spectroscopy. ZnO coated Au prisms (ZnO/Au/prism) were used to excite surface plasmons in Kretschmann configuration at the Au- ZnO interface on a laboratory assembled Surface Plasmon Resonance (SPR) measurement setup. Cholesterol oxidase (ChOx) enzyme was immobilized on the ZnO/Au/prism structure by physical adsorption technique. Polydimethylsiloxane (PDMS) microchannels were fabricated over ChOx/ZnO/Au/prism system and various concentrations of cholesterol were passed over the sensor surface. The concentration of cholesterol was varied from 0.12 to 10.23 mM and the SPR reflectance curves were recorded in both static as well as dynamic modes demonstrating a high sensitivity of 0.36° mM-1.

  4. Ellipsometry study of process deposition of amorphous Indium Gallium Zinc Oxide sputtered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Talagrand, C., E-mail: talagrand@emse.fr [Ecole des Mines de Saint-Etienne CMP-GC, Dept PS2, Gardanne, 880 route de Mimet (France); Boddaert, X. [Ecole des Mines de Saint-Etienne CMP-GC, Dept PS2, Gardanne, 880 route de Mimet (France); Selmeczi, D.G.; Defranoux, C. [Semilab Semiconductor Physics Laboratory Co. Ltd., Budapest, 1117 (Hungary); Collot, P. [Ecole Nationale Supérieure d' Arts et Métiers ParisTech, Aix-en-Provence, 2 cours des Arts et Métiers (France)

    2015-09-01

    This paper reports on an InGaZnO optical study by spectrometric ellipsometry. First of all, the fitting results of different models and different structures are analysed to choose the most appropriate model. The Tauc–Lorentz model is suitable for thickness measurements but a more complex model allows the refractive index and extinction coefficient to be extracted more accurately. Secondly, different InGaZnO process depositions are carried out in order to investigate stability, influence of deposition time and uniformity. Films present satisfactory optical stability over time. InGaZnO optical property evolution as a function of deposition time is related to an increase in temperature. To understand the behaviour of uniformity, mapping measurements are correlated to thin film resistivity. Results show that temperature and resputtering are the two phenomena that affect IGZO uniformity. - Highlights: • Model and structure are investigated to fit IGZO ellipsometric angles. • Maximum refractive index rises with substrate temperature and thus deposition time. • Resputtering leads to inhomogeneity in IGZO electrical and optical properties.

  5. Assessment of lead, cadmium, and zinc contamination of roadside soils, surface films, and vegetables in Kampala City, Uganda

    International Nuclear Information System (INIS)

    Nabulo, Grace; Oryem-Origa, Hannington; Diamond, Miriam

    2006-01-01

    The relationship between traffic density and trace metal concentrations in roadside soils, surface films, and a selected vegetable weed, Amaranthus dubius Mart. Ex Thell., was determined in 11 farming sites along major highways around Kampala City in Uganda. Surface soil, atmospherically deposited surface films on windows, and leaves of Amaranthus dubius were sampled at known distances from the roads and analyzed for lead (Pb), zinc (Zn), and cadmium (Cd) using flame atomic absorption spectrophotometry. Atmospherically deposited trace metal particulates were sampled using window glass as an inert, passive collector. Total trace metal concentrations in soils ranged from 30.0±2.3 to 64.6±11.7 mg/kg Pb, 78.4±18.4 to 265.6±63.2 mg/kg Zn, and 0.8±0.13 to 1.40±0.16 mg/kg Cd. Total trace metal levels in soil decreased rapidly with distance from the road. Total Pb decreased with distance up to 30 m from the road, where it reached a background soil concentration of 28 mg/kg dry weight. The study found background values of 50 and 1.4 mg/kg for Zn and Cd in roadside soils, respectively. Similarly, Pb concentration in Amaranthus dubius leaves decreased with increasing distance from the road edge. The dominant pathway for Pb contamination was from atmospheric deposition, which was consistent with Pb concentrations in surface films. The mean Pb concentrations in leaves of roadside crops were higher than those in their respective roots, with the highest leaf-to-root ratio observed in the Brassica oleraceae acephala group. The lowest Pb and Zn concentrations were found in the fruit compared to the leaves of the same crops. Leaves of roadside vegetables were therefore considered a potential source of heavy metal contamination to farmers and consumers in urban areas. It is recommended that leafy vegetables should be grown 30 m from roads in high-traffic, urban areas

  6. Characteristics of low-resistivity aluminum-doped zinc oxide films deposited at room temperature by off-axis radio-frequency sputtering on flexible plastic substrates

    Science.gov (United States)

    Wang, Li-Min; Wang, Chih-Yi; Jheng, Ciao-Ren; Wu, Syu-Jhan; Sai, Chen-Kai; Lee, Ya-Ju; Chiang, Ching-Yu; Shew, Bor-Yuan

    2016-08-01

    The crystalline structure, morphology, composition, electrical transport, and optical properties of aluminum-doped zinc oxide (AZO) films are studied for applications in transparent electronics and optoelectronic devices. AZO thin films of c-axis-oriented growth and with different thickness were deposited on PET flexible plastic substrates at room temperature by rf magnetron sputtering. A larger grain size with a decreased strain ɛ value is observed in a thicker film, while changes in composition for films with different thicknesses are insignificant. Moreover, the resistivity of film decreases with increasing thickness, and the low-temperature electrical transport properties can be described by the scenario of quantum corrections to conductivity. With the room-temperature growth conditions, the resistivity of 4.5 × 10-4 Ω cm, carrier concentration of 6.4 × 1020 cm-3, and transmittance of 80 % for the 1100-nm-thick film are obtained. In addition, the optical bandgap energy decreases with increasing film thickness, which can be attributed to the bandgap renormalization and crystallite size effects.

  7. Effect of the Milling Time of the Precursors on the Physical Properties of Sprayed Aluminum-Doped Zinc Oxide (ZnO:Al Thin Films

    Directory of Open Access Journals (Sweden)

    María De La Luz Olvera

    2012-08-01

    Full Text Available Aluminum doped zinc oxide (ZnO:Al thin films were deposited on soda-lime glass substrates by the chemical spray technique. The atomization of the solution was carried out by ultrasonic excitation. Six different starting solutions from both unmilled and milled Zn and Al precursors, dissolved in a mix of methanol and acetic acid, were prepared. The milling process was carried out using a planetary ball mill at a speed of 300 rpm, and different milling times, namely, 15, 25, 35, 45, and 60 min. Molar concentration, [Al]/[Zn] atomic ratio, deposition temperature and time, were kept at constant values; 0.2 M, 3 at.%, 475 °C, and 10 min, respectively. Results show that, under the same deposition conditions, electrical resistivities of ZnO:Al thin films deposited from milled precursors are lower than those obtained for films deposited from unmilled precursors. X-ray diffraction analysis revealed that all films display a polycrystalline structure, fitting well with the hexagonal wurtzite structure. Changes in surface morphology were observed by scanning electron microscopy (SEM as well, since films deposited from unmilled precursors show triangular shaped grains, in contrast to films deposited from 15 and 35 min milled precursors that display thin slices with hexagonal shapes. The use of milled precursors to prepare starting solutions for depositing ZnO:Al thin films by ultrasonic pyrolysis influences their physical properties.

  8. Preparation of aluminum doped zinc oxide films with low resistivity and outstanding transparency by a sol–gel method for potential applications in perovskite solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xingyue; Shen, Heping; Zhou, Chen [State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 10084 (China); Lin, Shiwei [Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, Hainan University, Haikou 570228 (China); Li, Xin [State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 10084 (China); Zhao, Xiaochong [State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 10084 (China); Science and Technology on Surface Physics and Chemistry Laboratory, Mianyang 621907 (China); Deng, Xiangyun [Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, Hainan University, Haikou 570228 (China); College of Physics and Electronic Information, Tianjin, Normal University, Tianjin 300387 (China); Li, Jianbao [State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 10084 (China); Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, Hainan University, Haikou 570228 (China); Lin, Hong [State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 10084 (China)

    2016-04-30

    Highly transparent and conductive aluminum doped zinc oxide (AZO) films were prepared by sol–gel method on the glass substrates. The effects of doping concentration, annealing temperature and facing direction during annealing on the structural, electrical and optical properties of AZO films were studied by performing a series of characterizations including X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, UV–vis spectrophotometry, four-point probe method and Hall effect measurement system. The results showed that the AZO films were wurtzite crystallized with c-axis preferred orientation. A minimum resistivity of 1.8 × 10{sup −3} Ω cm and a transmittance above 90% were obtained for the film doped with 1.5 at.% aluminum, annealed at 510 °C and faced-down in the oven, which was among the best performance of the currently reported works based on sol–gel process. Moreover, energy level analysis revealed that the AZO film has a work function of 4.3 eV, exhibiting great potential in perovskite solar cell applications. - Highlights: • Highly transparent and conductive AZO films were prepared by sol–gel based process. • Different facing directions during annealing had effects on the carrier mobility. • Less aluminum ions at the grain boundary would favor the carrier transport. • The potential of AZO film in the perovskite solar cell application was discussed.

  9. Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Dondapati, Hareesh; Santiago, Kevin; Pradhan, A. K. [Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, Virginia 23504 (United States)

    2013-10-14

    We have investigated the responsible mechanism for the observation of metallic conductivity at room temperature and metal-semiconductor transition (MST) at lower temperatures for aluminum-doped zinc oxide (AZO) films. AZO films were grown on glass substrates by radio-frequency magnetron sputtering with varying substrate temperatures (T{sub s}). The films were found to be crystalline with the electrical resistivity close to 1.1 × 10{sup −3} Ω cm and transmittance more than 85% in the visible region. The saturated optical band gap of 3.76 eV was observed for the sample grown at T{sub s} of 400 °C, however, a slight decrease in the bandgap was noticed above 400 °C, which can be explained by Burstein–Moss effect. Temperature dependent resistivity measurements of these highly conducting and transparent films showed a MST at ∼110 K. The observed metal-like and metal-semiconductor transitions are explained by taking into account the Mott phase transition and localization effects due to defects. All AZO films demonstrate crossover in permittivity from positive to negative and low loss in the near-infrared region, illustrating its applications for plasmonic metamaterials, including waveguides for near infrared telecommunication region. Based on the results presented in this study, the low electrical resistivity and high optical transmittance of AZO films suggested a possibility for the application in the flexible electronic devices, such as transparent conducting oxide film on LEDs, solar cells, and touch panels.

  10. Synthesis of ZnS thin films from aqueous caustic of trisodium citrate and their properties

    Directory of Open Access Journals (Sweden)

    Martyn A. Sozanskyi

    2015-12-01

    Full Text Available Zinc sulfide (ZnS thin films due to their properties are widely used in various electronic optical devices. They are produced by several methods, among which – vacuum sublimation, high frequency sputtering method, quasiclosed volume method, sol-gel method, electrodeposition. These methods have high energy consumption which increases the price of ZnS thin films. Aim: The aim of this work is to establish the optimal parameters of the synthesis of ZnS thin films of the aqueous caustic and the correlation between content of zinc in the synthesized films determined by the method of stripping voltammetry and thickness, structural, morphological and optical parameters. Materials and Methods: The ZnS thin films were obtained from aqueous caustics of zinc-containing salt using chemical deposition. Fresh solution of zinc-containing salt, trisodium citrate (Na3C6H5O7 as a complexing agent, thiourea ((NH22CS and ammonium hydroxide (NH4OH was used for the synthesis of ZnS films by chemical deposition. The deposition was performed on prepared glass substrates with the area of 5,76 cm2. Results: The phase mixture of the films has been determined. It showed the presence of ZnS compounds in the cubic modification (sphalerite. Stripping voltammetry was used to determine the mass of zinc in the ZnS films on various conditions of synthesis, namely on the concentration of the initial zinc-containing salt, trisodium citrate, thiourea, deposition time and temperature. The surface morphology, optical properties, the thickness of the ZnS resulting films have been studied. Conclusions: The optimal conditions for the synthesis of ZnS films were found based on these data. Three-dimensional surface morphology of ZnS film studies showed its smoothness, uniformity, integrity and confirmed the correctness of determining the optimal synthesis parameters.

  11. Structural transition, subgap states, and carrier transport in anion-engineered zinc oxynitride nanocrystalline films

    International Nuclear Information System (INIS)

    Xian, Fenglin; Ye, Jiandong; Gu, Shulin; Tan, Hark Hoe; Jagadish, Chennupati

    2016-01-01

    In this work, anion alloying is engineered in ZnON nanocrystalline films, and the resultant evolution of the structural transition, subgap states, and carrier transport is investigated. A broad distribution of sub-gap states above the valence band maximum is introduced by nitrogen due to the hybridization of N 2p and O 2p orbitals. The phase transition from partially amorphous states to full crystallinity occurs above a characteristic growth temperature of 100 °C, and the localized states are suppressed greatly due to the reduction of nitrogen composition. The electronic properties are dominated by grain boundary scattering and electron transport across boundary barriers through thermal activation at band edge states at high temperatures. The conductivity below 130 K exhibits a weak temperature dependence, which is a signature of variable-range hopping conduction between localized states introduced by nitrogen incorporation.

  12. Structure and characterization of Sn, Al co-doped zinc oxide thin films prepared by sol–gel dip-coating process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Min-I [Institute of Materials Science and Engineering, National Central University, Taiwan (China); Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS - UMR STMR 6279, Université de Technologie de Troyes (France); Huang, Mao-Chia [Institute of Materials Science and Engineering, National Central University, Taiwan (China); Legrand, David [Institute of Materials Science and Engineering, National Central University, Taiwan (China); Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS - UMR STMR 6279, Université de Technologie de Troyes (France); Lerondel, Gilles [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS - UMR STMR 6279, Université de Technologie de Troyes (France); Lin, Jing-Chie, E-mail: jclin4046@gmail.com [Institute of Materials Science and Engineering, National Central University, Taiwan (China)

    2014-11-03

    Transparent conductive zinc oxide co-doped with tin and aluminum (TAZO) thin films were prepared via sol–gel dip-coating process. Non-toxic ethanol was used in this study instead of 2-methoxyethanol used in conventional work. Dip-coating was repeated several times to obtain relatively thick films consisting of six layers. The films were then annealed at 500 °C for 1 h in air or in vacuum and not subsequently as employed in other studies. The X-ray diffraction patterns indicated that all the samples revealed a single phase of hexagonal ZnO polycrystalline structure with a main peak of (002). The optical band gap and resistivity of the TAZO films were in the ranges of 3.28 to 3.32 eV and 0.52 to 575.25 Ω cm, respectively. The 1.0 at.% Sn, 1.0 at.% Al co-doped ZnO thin film annealed in vacuum was found to have a better photoelectrochemical performance with photocurrent density of about 0.28 mA/cm{sup 2} at a bias of 0.5 V vs. SCE under a 300 W Xe lamp illumination with the intensity of 100 mW/cm{sup 2}. Compared to the same dopant concentration but annealed in air (∼ 0.05 mA/cm{sup 2} bias 0.5 V vs. SCE), the photocurrent density of the film annealed in vacuum was 5 times higher than the film annealed in air. Through electrochemical measurements, we found that the dopant concentration of Sn plays an important role in TAZO that affected photocurrent density, stability of water splitting and anti-corrosion. - Highlights: • Al, Sn co-doped ZnO (TAZO) films was synthesized by sol–gel process. • The parameters of TAZO films were dopant concentration and annealed ambient. • The photoelectrochemical characteristics of TAZO films were investigated.

  13. Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

    Directory of Open Access Journals (Sweden)

    Krawczak Ewelina

    2017-01-01

    Full Text Available Transparent Conductive Oxides (TCOs characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

  14. Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

    Science.gov (United States)

    Krawczak, Ewelina; Agata, Zdyb; Gulkowski, Slawomir; Fave, Alain; Fourmond, Erwann

    2017-11-01

    Transparent Conductive Oxides (TCOs) characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO) is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology) as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

  15. Using Spin-Coated Silver Nanoparticles/Zinc Oxide Thin Films to Improve the Efficiency of GaInP/(InGaAs/Ge Solar Cells

    Directory of Open Access Journals (Sweden)

    Po-Hsun Lei

    2018-06-01

    Full Text Available We synthesized a silver nanoparticle/zinc oxide (Ag NP/ZnO thin film by using spin-coating technology. The treatment solution for Ag NP/ZnO thin film deposition contained zinc acetate (Zn(CH3COO2, sodium hydroxide (NaOH, and silver nitrate (AgNO3 aqueous solutions. The crystalline characteristics, surface morphology, content of elements, and reflectivity of the Ag NPs/ZnO thin film at various concentrations of the AgNO3 aqueous solution were investigated using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, atomic force microscopy, and ultraviolet–visible–near infrared spectrophotometry. The results indicated that the crystalline structure, Ag content, and reflectance of Ag NP/ZnO thin films depended on the AgNO3 concentration. Hybrid antireflection coatings (ARCs composed of SiNx and Ag NPs/ZnO thin films with various AgNO3 concentrations were deposited on GaInP/(InGaAs/Ge solar cells. We propose that the optimal ARC consists of SiNx and Ag NP/ZnO thin films prepared using a treatment solution of 0.0008 M AgNO3, 0.007 M Zn(CH3COO2, and 1 M NaOH, followed by post-annealing at 200 °C. GaInP/(AlGaAs/Ge solar cells with the optimal hybrid ARC and SiNx ARC exhibit a conversion efficiency of 34.1% and 30.2% with Voc = 2.39 and 2.4 V, Jsc = 16.63 and 15.37 mA/cm2, and fill factor = 86.1% and 78.8%.

  16. Optimization of the optical and electrical properties of electron beam evaporated aluminum-doped zinc oxide films for opto-electronic applications

    Science.gov (United States)

    Ali, H. M.; Abd El-Raheem, M. M.; Megahed, N. M.; Mohamed, H. A.

    2006-08-01

    Aluminum-doped zinc oxide (AZO) thin films have been deposited by electron beam evaporation technique on glass substrates. The structural, electrical and optical properties of AZO films have been investigated as a function of annealing temperature. It was observed that the optical properties such as transmittance, reflectance, optical band gap and refractive index of AZO films were strongly affected by annealing temperature. The transmittance values of 84% in the visible region and 97% in the NIR region were obtained for AZO film annealed at 475 °C. The room temperature electrical resistivity of 4.6×10-3 Ω cm has been obtained at the same temperature of annealing. It was found that the calculated refractive index has been affected by the packing density of the thin films, whereas, the high annealing temperature gave rise to improve the homogeneity of the films. The single-oscillator model was used to analyze the optical parameters such as the oscillator and dispersion energies.

  17. The effect of the solution flow rate on the properties of zinc oxide (ZnO) thin films deposited by ultrasonic spray

    International Nuclear Information System (INIS)

    Attaf, A.; Benkhetta, Y.; Saidi, H.; Bouhdjar, A.; Bendjedidi, H.; Nouadji, M.; Lehraki, N.

    2015-01-01

    In this work, we used a system based on ultrasonic spray pyrolysis technique. By witch, we have deposited thin films of zinc oxide (ZnO) with the variation of solution flow rate from 50 ml / h to 150 ml / h, and set other parameters such as the concentration of the solution, the deposition time, substrate temperature and the nozzel -substrate distance. In order to study the influence of the solution flow rate on the properties of the films produced, we have several characterization techniques such as X-ray diffraction to determine the films structure, the scanning electron microscopy SEM for the morphology of the surfaces, EDS spectroscopy for the chemical composition, UV-Visible-Nir spectroscopy for determination the optical proprieties of thin films.The experimental results show that: the films have hexagonal structure at the type (wurtzite), the average size of grains varies from 20.11 to 32.45 nm, the transmittance of the films equals 80% in visible rang and the band gap is varied between 3.274 and 3.282 eV, when the solution flow rate increases from 50 to 150 ml/h

  18. The effect of the solution flow rate on the properties of zinc oxide (ZnO) thin films deposited by ultrasonic spray

    Science.gov (United States)

    Attaf, A.; Benkhetta, Y.; Saidi, H.; Bouhdjar, A.; Bendjedidi, H.; Nouadji, M.; Lehraki, N.

    2015-03-01

    In this work, we used a system based on ultrasonic spray pyrolysis technique. By witch, we have deposited thin films of zinc oxide (ZnO) with the variation of solution flow rate from 50 ml / h to 150 ml / h, and set other parameters such as the concentration of the solution, the deposition time, substrate temperature and the nozzel -substrate distance. In order to study the influence of the solution flow rate on the properties of the films produced, we have several characterization techniques such as X-ray diffraction to determine the films structure, the scanning electron microscopy SEM for the morphology of the surfaces, EDS spectroscopy for the chemical composition, UV-Visible-Nir spectroscopy for determination the optical proprieties of thin films.The experimental results show that: the films have hexagonal structure at the type (wurtzite), the average size of grains varies from 20.11 to 32.45 nm, the transmittance of the films equals 80% in visible rang and the band gap is varied between 3.274 and 3.282 eV, when the solution flow rate increases from 50 to 150 ml/h.

  19. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-04-30

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  20. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    International Nuclear Information System (INIS)

    Zeng, Xiangbin; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-01-01

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B_2H_6 flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10"−"3 Ω cm, mobility of 16.5–25.5 cm"2/Vs, and carrier concentration of 2.2–2.7 × 10"2"0 cm"−"3 were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n"+-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm"2 and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm"2 and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  1. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.

    Science.gov (United States)

    Shin, Kwan Yup; Tak, Young Jun; Kim, Won-Gi; Hong, Seonghwan; Kim, Hyun Jae

    2017-04-19

    In this research, nitrocellulose is proposed as a new material for the passivation layers of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The a-IGZO TFTs with nitrocellulose passivation layers (NC-PVLs) demonstrate improved electrical characteristics and stability. The a-IGZO TFTs with NC-PVLs exhibit improvements in field-effect mobility (μ FE ) from 11.72 ± 1.14 to 20.68 ± 1.94 cm 2 /(V s), threshold voltage (V th ) from 1.85 ± 1.19 to 0.56 ± 0.35 V, and on/off current ratio (I on/off ) from (5.31 ± 2.19) × 10 7 to (4.79 ± 1.54) × 10 8 compared to a-IGZO TFTs without PVLs, respectively. The V th shifts of a-IGZO TFTs without PVLs, with poly(methyl methacrylate) (PMMA) PVLs, and with NC-PVLs under positive bias stress (PBS) test for 10,000 s represented 5.08, 3.94, and 2.35 V, respectively. These improvements were induced by nitrogen diffusion from NC-PVLs to a-IGZO TFTs. The lone-pair electrons of diffused nitrogen attract weakly bonded oxygen serving as defect sites in a-IGZO TFTs. Consequently, the electrical characteristics are improved by an increase of carrier concentration in a-IGZO TFTs, and a decrease of defects in the back channel layer. Also, NC-PVLs have an excellent property as a barrier against ambient gases. Therefore, the NC-PVL is a promising passivation layer for next-generation display devices that simultaneously can improve electrical characteristics and stability against ambient gases.

  2. Structural properties of perovskite films on zinc oxide nanoparticles-reduced graphene oxide (ZnO-NPs/rGO) prepared by electrophoretic deposition technique

    Science.gov (United States)

    Bahtiar, Ayi; Nurazizah, Euis Siti; Latiffah, Efa; Risdiana, Furukawa, Yukio

    2018-02-01

    Perovskite solar cells highly believed as next generation solar cells to replace currently available inorganic silicon solar cells due to their high power conversion efficiency and easy processing to thin films using solution processing techniques. Performance and stability, however still need to be improved for mass production and widely used for public electricity generation. Perovskite solar cells are commonly deposited on Titanium Dioxide (TiO2) film as an effective electron transport layer (ETL). We used Zinc Oxide nanoparticles (ZnO-NPs) as ETL in perovskite solar cells due to the low temperature required for crystallization and can be formed into different shapes of nanostructures. However, perovskite film can easily degrade into insulating lead iodide due to deprotonation of the methylammoniumcation at the surface of ZnO-NPs, in particular when it stored in ambient air with high relative humidity. The degradation of perovskite layer is therefore needed to be overcome. Here, we capped ZnO-NPs with reduced graphene oxide (rGO) to overcome the degradation of perovskite film where ZnO-NPs is synthesized by sol-gel method. The average nanoparticle size of ZnO is 15 nm. ZnO-NPs and ZnO-NPs-rGO films are prepared using electrophoretic deposition technique, which can produce large area with good homogeneity and high reproducibility. The stability of perovskite layer can significantly be improved by capping ZnO with rGO, which is indicated by absence of color change of perovskite after storage for 5 (five) days in ambient air with relative humidity above 95%. Moreover, the X-Ray Diffaction peaks of perovskite film are more preserved when deposited on ZnO/rGO film than using only ZnO film. We strongly believe, by capping ZnO film with rGO, both the performance and stability of perovskite solar cells can be improved significantly.

  3. Determination of Hydrogen Sulfide in Fermentation Broths Containing SO21

    Science.gov (United States)

    Acree, T. E.; Sonoff, Elisabeth P.; Splittstoesser, D. F.

    1971-01-01

    A procedure for the determination of hydrogen sulfide in fermentation broths containing up to 100 μg of SO2 per ml is described. The method involves the sparging of H2S from the broth into a cadmium hydroxide absorption solution, the formation of methylene blue from the absorbed sulfide, and the measuring of this color spectrophotometrically. The use of cadmium hydroxide instead of zinc acetate, the common absorbent, substantially reduced the interference of SO2 with the analysis. PMID:5111300

  4. Volcanogenic massive sulfide occurrence model: Chapter C in Mineral deposit models for resource assessment

    Science.gov (United States)

    Shanks, W.C. Pat; Koski, Randolph A.; Mosier, Dan L.; Schulz, Klaus J.; Morgan, Lisa A.; Slack, John F.; Ridley, W. Ian; Dusel-Bacon, Cynthia; Seal, Robert R.; Piatak, Nadine M.; Shanks, W.C. Pat; Thurston, Roland

    2012-01-01

    Volcanogenic massive sulfide deposits, also known as volcanic-hosted massive sulfide, volcanic-associated massive sulfide, or seafloor massive sulfide deposits, are important sources of copper, zinc, lead, gold, and silver (Cu, Zn, Pb, Au, and Ag). These deposits form at or near the seafloor where circulating hydrothermal fluids driven by magmatic heat are quenched through mixing with bottom waters or porewaters in near-seafloor lithologies. Massive sulfide lenses vary widely in shape and size and may be podlike or sheetlike. They are generally stratiform and may occur as multiple lenses.

  5. Functional doped metal oxide films. Zinc oxide (ZnO) as transparent conducting oxide (TCO) titanium dioxide (TiO{sub 2}) as thermographic phosphor and protective coating

    Energy Technology Data Exchange (ETDEWEB)

    Nebatti Ech-Chergui, Abdelkader

    2011-07-29

    Metalorganic chemical vapor deposition (MOCVD) was used in the present work. Un-doped and Al-doped ZnO films were developed using two reactors: Halogen Lamp Reactor (HLR) (a type of Cold Wall Reactor) and Hot Wall Reactor (HWR), and a comparison was made between them in terms of the film properties. Zinc acetylacetonate was used as precursor for ZnO films while aluminum acetylacetonate was used for doping. The amount of Al doping can be controlled by varying the gas flow rate. Well ordered films with aluminum content between 0 and 8 % were grown on borosilicate glass and silicon. The films obtained are 0.3 to 0.5 {mu}m thick, highly transparent and reproducible. The growth rate of ZnO films deposited using HLR is less than HWR. In HLR, the ZnO films are well oriented along c-axis ((002) plane). ZnO films are commonly oriented along the c-axis due to its low surface free energy. On the other hand, the HWR films are polycrystalline and with Al doping these films aligned along the a-axis ((100) plane) which is less commonly observed. The best films were obtained with the HLR method showing a minimum electrical resistivity of 2.4 m{omega}cm and transmittance of about 80 % in the visible range. The results obtained for Al-doped films using HLR are promising to be used as TCOs. The second material investigated in this work was un-doped and doped titanium dioxide (TiO{sub 2}) films- its preparation and characterization. It is well known that thermographic phosphors can be used as an optical method for the surface temperature measurement. For this application, the temperature-dependent luminescence properties of europium (III)-doped TiO{sub 2} thin films were studied. It was observed that only europium doped anatase films show the phosphorescence. Rutile phase do not show phosphorescence. The films were prepared by the sol-gel method using the dip coating technique. The structures of the films were determined by X-ray diffraction (XRD). The excitation and the emission

  6. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    KAUST Repository

    Nayak, Pradipta K.

    2012-06-22

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

  7. Post-growth annealing of zinc oxide thin films pulsed laser deposited under enhanced oxygen pressure on quartz and silicon substrates

    International Nuclear Information System (INIS)

    Rusop, M.; Uma, K.; Soga, T.; Jimbo, T.

    2006-01-01

    Zinc oxide (ZnO) thin films have been prepared by pulsed laser deposition (PLD) technique at room temperature on quartz and single crystal silicon (1 0 0) substrates. The oxygen ambient gas pressure was attained at 6 Torr during the deposition. The deposited films were post-growth annealed in air at various annealing temperatures for 30 min. The X-ray diffraction (XRD), optical and electrical properties have been measured to study the properties of the films as a function of annealing temperatures. XRD has shown the strength of (0 0 2) peak increases and FWHM value decreases as the annealing temperatures increases from 200 to 600 deg. C. The post-growth annealed at 600 deg. C show dominant c-axis oriented hexagonal wurtize crystal structure and exhibit high average transmittance about 85% in the visible region and very sharp absorption edge at 376 nm with energy band gap of approximately 3.46 eV. Electrical measurement indicates the resistivity decreases with the annealing temperatures up to 600 deg. C, after which it increases with higher annealing temperatures at 800 deg. C. The complex of oxygen vacancy in the ZnO films may be the source of low conductivity in undoped ZnO films

  8. Optimization of aluminum-doped zinc oxide films deposited at low temperature by radio-frequency sputtering on flexible substrates for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B. [Grupo de Ingenieria Fotonica (GRIFO), Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain)

    2010-02-15

    Aluminum-doped zinc oxide films were deposited at 100 C on polyethylene terephthalate by radio-frequency magnetron sputtering. The sputtering parameters such as RF power and Argon working pressure were varied from 25 to 125 W and from 1.1 to 0.2 Pa, respectively. The structural properties of as-deposited films were analysed by X-ray diffraction, showing that all the deposited films were polycrystalline, with hexagonal structure and a strong preferred c-axis orientation (0 0 2). Full width at half maximum and grain sizes were around 0.27 and ranged from 24 to 32 nm, respectively. The strain state of the samples was also estimated from X-ray diffraction measurements, obtaining compressive stresses from 0.29 to 0.05 GPa. Resistivity as low as 1.1 x 10{sup -3} {omega} cm was achieved for the film deposited at 75 W and 0.2 Pa, sample that showed a low strain state of -0.06 GPa. High optical transmittance ({proportional_to}80%) was exhibited when films were deposited at RF powers below 100 W. Band gap energies ranged from 3.36 to 3.39 eV and a refractive index of 1.80{+-}0.05, constant in the visible region, was also obtained. (author)

  9. Sprayed zinc oxide films: Ultra-violet light-induced reversible surface wettability and platinum-sensitization-assisted improved liquefied petroleum gas response.

    Science.gov (United States)

    Nakate, Umesh T; Patil, Pramila; Bulakhe, R N; Lokhande, C D; Kale, Sangeeta N; Naushad, Mu; Mane, Rajaram S

    2016-10-15

    We report the rapid (superhydrophobic to superhydrophilic) transition property and improvement in the liquefied petroleum gas (LPG) sensing response of zinc oxide (ZnO) nanorods (NRs) on UV-irradiation and platinum (Pt) surface sensitization, respectively. The morphological evolution of ZnO NRs is evidenced from the field emission scanning electron microscope and atomic force microscope digital images and for the structural elucidation X-ray diffraction pattern is used. Elemental survey mapping is obtained from energy dispersive X-ray analysis spectrum. The optical properties have been studied by UV-Visible and photoluminescence spectroscopy measurements. The rapid (120sec) conversion of superhydrophobic (154°) ZnO NRs film to superhydrophilic (7°) is obtained under UV light illumination and the superhydrophobicity is regained by storing sample in dark. The mechanism for switching wettability behavior of ZnO NRs has thoroughly been discussed. In second phase, Pt-sensitized ZnO NRs film has demonstrated considerable gas sensitivity at 260ppm concentration of LPG. At 623K operating temperature, the maximum LPG response of 58% and the response time of 49sec for 1040ppm LPG concentration of Pt- sensitized ZnO NRs film are obtained. This higher LPG response of Pt-sensitized ZnO NRs film over pristine is primarily due to electronic effect and catalytic effect (spill-over effect) caused by an additional of Pt on ZnO NRs film surface. Copyright © 2016 Elsevier Inc. All rights reserved.

  10. High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF{sub 4}/Ar plasma

    Energy Technology Data Exchange (ETDEWEB)

    Joo, Young-Hee; Kim, Chang-Il

    2015-05-29

    We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF{sub 4}/Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700 W, a DC-bias voltage of − 150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF{sub 4}/Ar(= 25:75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF{sub 4}/Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. - Highlights: • IGZO thin film was etched by CF{sub 4}/Ar plasma as a function of gas mixing ratio. • IGZO bonds were broken Ar{sup +} sputtering and then reacted with the C-F{sub x} radicals. • The physical sputtering is dominant in etch control compared with chemical etching.

  11. SULFIDE MINERALS IN SEDIMENTS

    Science.gov (United States)

    The formation processes of metal sulfides in sediments, especially iron sulfides, have been the subjects of intense scientific research because of linkages to the global biogeochemical cycles of iron, sulfur, carbon, and oxygen. Transition metal sulfides (e.g., NiS, CuS, ZnS, Cd...

  12. Process development of ITO source/drain electrode for the top-gate indium-gallium-zinc oxide transparent thin-film transistor

    International Nuclear Information System (INIS)

    Cheong, Woo-Seok; Yoon, Young-sun; Shin, Jae-Heon; Hwang, Chi-Sun; Chu, Hye Yong

    2009-01-01

    Indium-tin oxide (ITO) has been widely used as electrodes for LCDs and OLEDs. The applications are expanding to the transparent thin-film transistors (TTFT S ) for the versatile circuits or transparent displays. This paper is related with optimization of ITO source and drain electrode for TTFTs on glass substrates. For example, un-etched ITO remnants, which frequently found in the wet etching process, often originate from unsuitable ITO formation processes. In order to improve them, an ion beam deposition method is introduced, which uses for forming a seed layer before the main ITO deposition. We confirm that ITO films with seed layers are effective to obtain clean and smooth glass surfaces without un-etched ITO remnants, resulting in a good long-run electrical stability of the top-gate indium-gallium-zinc oxide-TTFT.

  13. Realization of write-once-read-many-times memory device with O{sub 2} plasma-treated indium gallium zinc oxide thin film

    Energy Technology Data Exchange (ETDEWEB)

    Liu, P., E-mail: liup0013@ntu.edu.sg; Chen, T. P., E-mail: echentp@ntu.edu.sg; Li, X. D.; Wong, J. I. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Liu, Z. [School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Liu, Y. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Leong, K. C. [GLOBALFOUNDRIES Singapore Pte Ltd, 60 Woodlands Industrial Park D Street 2, Singapore 738406 (Singapore)

    2014-01-20

    A write-once-read-many-times (WORM) memory devices based on O{sub 2} plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2 V is ∼10{sup 9} Ω for a device with the radius of 50 μm) as a result of the O{sub 2} plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2 V is ∼10{sup 3} Ω for the radius of 50 μm) by applying a voltage pulse (e.g., 10 V/1 μs). The WORM device has good data-retention and reading-endurance capabilities.

  14. On the synthesis of a compound with positive enthalpy of formation: Zinc-blende-like RuN thin films obtained by rf-magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cattaruzza, E., E-mail: cattaruz@unive.it [Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, Via Torino 155/B, 30172 Mestre-VE (Italy); Battaglin, G.; Riello, P. [Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, Via Torino 155/B, 30172 Mestre-VE (Italy); Cristofori, D. [Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice and Centre for Electron Microscopy “Giovanni Stevanato”, Via Torino 155/B, 30172 Mestre-VE (Italy); Tamisari, M. [Department of Physics and Earth Sciences, University of Ferrara, Via Saragat 1, 44121 Ferrara (Italy)

    2014-11-30

    Highlights: • RuN thin films in the zinc-blende structure have been synthesized by rf-magnetron sputtering. • Contribute is given to the understanding of phase-formation mechanisms in systems that under ambient conditions present positive enthalpies of formation. • Contribute is given to the understanding of phenomena occurring during reactive sputtering processes. • Nanopillar structure: suitable for application requiring a high effective area, like sensing, catalysis, and electrode material for energy-storage devices. - Abstract: 4d- and 5d-transition metal nitrides are of interest both because of their importance for the understanding of mechanisms of phase formation in systems that under ambient conditions present positive enthalpies of formation and because of their appealing structural and electronic properties. In this study, we report the synthesis of thin films of ruthenium mononitride (RuN) in the zinc-blende structure by radio-frequency-magnetron sputtering. Films present a characteristic structure of packed columns ending with tetrahedral tips. The effect of changing the synthesis parameters was investigated in detail. It was found that RuN can be formed if the nitrogen partial pressure exceeds a minimum value and that the addition of argon has the major effect of increasing the deposition rate because of its higher sputter ability. Temperature plays an important role: if it is too high, decomposition/desorption effects overcome those leading to the formation of the compound. Phenomena resulting in the formation of RuN occur at the surface of the growing films and are related to the interactions of ruthenium with energetic nitrogen ions, or atoms, which can penetrate the first atomic layers by low energy implantation. Because of its properties and structure, this material is a promising candidate for applications like sensing, catalysis, and electrode material for energy-storage devices.

  15. Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer

    Science.gov (United States)

    Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting

    2018-02-01

    To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each IGZAO channel layer was deposited on indium tin oxide (ITO)-coated glass substrate by using a magnetron radiofrequency cosputtering system with dual targets composed of indium gallium zinc oxide (IGZO) and Al. The 3 s orbital of Al cation provided an extra transport pathway and widened the conduction-band bottom, thus increasing the electron mobility of the IGZAO films. The Al-O bonds were able to sustain the oxygen stability of the IGZAO films. The self-heating behavior of the resulting IGZAO TFTs was studied by Hall measurements on the IGZAO films as well as the electrical performance of the IGZAO TFTs with Al2O3 barrier layers of various thicknesses at different temperatures. IGZAO TFTs with 50-nm-thick Al2O3 barrier layer were stressed by positive gate bias stress (PGBS, at gate-source voltage V GS = 5 V and drain-source voltage V DS = 0 V); at V GS = 5 V and V DS = 10 V, the threshold voltage shifts were 0.04 V and 0.2 V, respectively, much smaller than for the other IGZAO TFTs without Al2O3 barrier layer, which shifted by 0.2 V and 1.0 V when stressed under the same conditions.

  16. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

    International Nuclear Information System (INIS)

    Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-01-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

  17. Influence of addition of indium and of post-annealing on structural, electrical and optical properties of gallium-doped zinc oxide thin films deposited by direct-current magnetron sputtering