Growth, thermal and laser properties of Yb:YxLu1−xVO4 mixed crystal

International Nuclear Information System (INIS)

Zhong, Degao; Teng, Bing; Kong, Weijin; Li, Jianhong; Zhang, Shiming; Li, Yuyi; Cao, Lifeng; Yang, Liting; He, Linxiang; Huang, Wanxia

2015-01-01

New mixed crystal of Yb: Y 0.78 Lu 0.22 VO 4 with Yb ion concentration of 0.3 at% was grown by Czochralski method. Transmission synchrotron X-ray topography implies that this mixed crystal follows a rotational growth pattern. Crystal structure of this crystal was determined by X-ray diffraction. It showed that this crystal possesses a tetragonal zircon structure (ZrSiO 4 , space group I41/amd), as YVO 4 and LuVO 4 do. Thermal properties of this crystal were characterized by measuring its specific heat, thermal expansion coefficients and thermal conductivities. The specific heat was determined to be 0.500 J g −1 K −1 at 293 K. The average linear thermal expansion coefficients were calculated to be α 11 = 1.73 × 10 −6 K −1 and α 33 = 9.43 × 10 −6 K −1 , over the temperature range of 300–777 K. The thermal conductivities were calculated to be κ 11 = 5.47 W m −1 K −1 and κ 33 = 6.64 W m −1 K −1 at 303 K. Continuous-wave (cw) laser test on Yb: Y 0.78 Lu 0.22 VO 4 was conducted at room temperature in the wavelength range of 1035.7–1048.3 nm, and a 13.5% optical-to-optical efficiency was achieved. The good thermal properties of Yb:Y 0.78 Lu 0.22 VO 4 mixed crystal and its attractive cw laser performance make it very suitable for practical applications. - Highlights: • New Yb:Y 0.78 Lu 0.22 VO 4 mixed laser crystals were grown. • The thermal expansion, thermal diffusivity and specific heat were measured. • Cw laser operation was realized at room temperature in the range of 1035.7–1048.3 nm

Probing localized strain in solution-derived YB a2C u3O7 -δ nanocomposite thin films

Science.gov (United States)

Guzman, Roger; Gazquez, Jaume; Mundet, Bernat; Coll, Mariona; Obradors, Xavier; Puig, Teresa

2017-07-01

Enhanced pinning due to nanoscale strain is unique to the high-Tc cuprates, where pairing may be modified with lattice distortion. Therefore a comprehensive understanding of the defect landscape is required for a broad range of applications. However, determining the type and distribution of defects and their associated strain constitutes a critical task, and for this aim, real-space techniques for atomic resolution characterization are necessary. Here, we use scanning transmission electron microscopy (STEM) to study the atomic structure of individual defects of solution-derived YB a2C u3O7 (YBCO) nanocomposites, where the inclusion of incoherent secondary phase nanoparticles within the YBCO matrix dramatically increases the density of Y1B a2C u4O8 (Y124) intergrowths, the commonest defect in YBCO thin films. The formation of the Y124 is found to trigger a concatenation of strain-derived interactions with other defects and the concomitant nucleation of intrinsic defects, which weave a web of randomly distributed nanostrained regions that profoundly transform the vortex-pinning landscape of the YBCO nanocomposite thin films.

Optical and structural properties of natural MnSeO{sub 4} mineral thin film

Energy Technology Data Exchange (ETDEWEB)

Kariper, Ishak Afsin, E-mail: akariper@gmail.com [Erciyes University, Education Faculty, Kayseri (Turkey)

2017-05-15

Manganese selenite (MnSeO{sub 4}) crystalline thin film has been produced with chemical bath deposition on substrates (commercial glass). Properties of the thin film, such as transmittance, absorption, and optical band gap and refraction index have been investigated via UV/VIS Spectrum. The structural properties of orthorhombic form have been observed in XRD. The structural and optical properties of MnSeO{sub 4} thin films, deposited at different pH levels were analyzed. Some properties of the films have been changed with the change of pH level, which has been deeply investigated. The grain size of MnSeO{sub 4} thin film has reached its highest value at pH 9. The refraction index and extinction coefficient of MnSeO{sub 4} thin films were measured to be 1.53, 2.86, 2.07, 1.53 (refraction index) and 0.005, 0.029, 0.014, 0.005 (extinction coefficient) for grain sizes 21, 13, 26, and 5 nm respectively. The band gaps (Eg) of the films were measured to be 2.06, 2.57, 2.04, and 2.76 eV for the grain sizes mentioned above. The value of dielectric constant at pH 10 was calculated as 1.575. (author)

Electrochemical synthesis of photosensitive nano-nest like CdSe{sub 0.6}Te{sub 0.4} thin films

Energy Technology Data Exchange (ETDEWEB)

Shinde, Surendra K., E-mail: surendrashinde.phy@gmail.com [Holography and Material Research Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S (India); Thombare, Jagannath V. [Holography and Material Research Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S (India); Dubal, Deepak P. [Department of Electrochemistry, Technische Universität Chemnitz Institut für Chemie, Straße der Nationen 62, D-09111 Chemnitz (Germany); Fulari, Vijay J., E-mail: vijayfulari@gmail.com [Holography and Material Research Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S (India)

2013-10-01

Polycrystalline CdSe{sub 0.6}Te{sub 0.4} thin films were deposited on stainless steel and ITO coated glass (ITO) substrates by using simple and inexpensive electrodeposition method. CdSe{sub 0.6} Te{sub 0.4} films are characterized by different characterization techniques such as X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Fourier transform infrared spectroscopy (FTIR) and contact angle measurement. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure. FE-SEM studies reveal that the entire substrate surface is covered with CdSe{sub 0.6} Te{sub 0.4} nano-nest. Formation of CdSe{sub 0.6}Te{sub 0.4} compound was confirmed from the FTIR studies. Optical absorption study shows the presence of direct transition and a considerable band gap, E{sub g} = 1.7 eV. Surface wettability with solid–liquid interface showed hydrophilic nature with water contact angle 57° (<90°). Further photovoltaic activity of CdSe{sub 0.6}Te{sub 0.4} films were studied by forming the photoelectrochemical cell having CdSe{sub 0.6}Te{sub 0.4}/1 M (Na{sub 2}S + S + NaOH)/C cell configuration. The efficiency and fill factor of these PEC cells are found to be 0.64% and 0.49 respectively.

Preparation and characterization of co-evaporated Cu{sub 2}ZnGeSe{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Uday Bhaskar, P.; Suresh Babu, G.; Kishore Kumar, Y.B.; Sundara Raja, V., E-mail: sundararajav@rediffmail.com

2013-05-01

Cu{sub 2}ZnGeSe{sub 4} (CZGSe), a member of Cu{sub 2}–II–IV–VI{sub 4} family, is a promising material for solar cell absorber layer in thin film heterojunction solar cells like Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSnSe{sub 4} which have been explored in recent years as alternate to CuInGaSe{sub 2} solar cells. The effect of substrate temperature (523 K–723 K) on the growth of CZGSe films is investigated by studying their structural, morphological and optical properties. Raman spectroscopy studies have been done to identify the phases in addition to X-ray diffraction studies. CZGSe films deposited at different substrate temperatures and annealed at 723 K in selenium atmosphere are Cu-rich and Ge-poor and contained secondary phases Cu{sub (2−x)}Se and ZnSe. CZGSe films obtained by reducing the starting Cu mass by 10% were found to be single phase with stannite structure, the lattice parameters being a = 0.563 nm, c = 1.101 nm. The direct optical band gap of CZGSe films is found to be 1.63 eV which is close to ideal band gap of 1.50 eV for the highest photovoltaic conversion efficiency. The films are found to be p-type. - Highlights: • Synthesis of Cu{sub 2}ZnGeSe{sub 4} films for solar cell absorber layer • Effect of substrate temperature on the growth of co-evaporated Cu{sub 2}ZnGeSe{sub 4} films • X-ray diffraction, Raman and morphological studies of Cu{sub 2}ZnGeSe{sub 4} thin films.

The simplest representative of a complex series. The Hg-rich amalgam Yb_1_1Hg_5_4

International Nuclear Information System (INIS)

Tambornino, Frank; Hoch, Constantin

2017-01-01

Yb_1_1Hg_5_4 is a new member of a series of amalgams with composition close to MHg_5. Its crystal structure was solved and refined on the basis of single crystal data. The structure model was confirmed with a Rietveld refinement. Yb_1_1Hg_5_4 has the first crystal structure in this family in which no disorder effects such as mixed occupation, split positions or superstructure formation is observed. It therefore can be regarded as a parent structure for all other amalgams. The crystal structure of Yb_1_1Hg_5_4 can be derived from the Gd_1_4Ag_5_1 structure type, the aristotype of this family. We give a detailed crystal structure description for Yb_1_1Hg_5_4 and discuss it in the context of the further known crystal structures closely related. A ranking within this structure family can be established by calculating features for the structural complexity for all structures, including the individual disorder phenomena.

Synthesis, structure and magnetic properties of crystallographically aligned CuCr_2Se_4 thin films

International Nuclear Information System (INIS)

Esters, Marco; Liebig, Andreas; Ditto, Jeffrey J.; Falmbigl, Matthias; Albrecht, Manfred; Johnson, David C.

2016-01-01

We report the low temperature synthesis of highly textured CuCr_2Se_4 thin films using the modulated elemental reactant (MER) method. The structure of CuCr_2Se_4 is determined for the first time in its thin film form and exhibits cell parameters that are smaller than found in bulk CuCr_2Se_4. X-ray diffraction and precession electron diffraction show a strong degree of crystallographic alignment of the crystallites, where the axis is oriented perpendicular to the substrate surface, while being rotationally disordered within the plane. Temperature and field dependent in-plane and out-of-plane magnetization measurements show that the film is ferromagnetic with a Curie temperature of 406 K CuCr_2Se_4 synthesized utilizing the MER method shows stronger magnetic anisotropy (effective anisotropy: 1.82 × 10"6 erg cm"−"3; shape anisotropy: 1.07 × 10"6 erg cm"−"3), with the easy axis lying out of plane, and a larger magnetic moment (6 μ_B/f.u.) than bulk CuCr_2Se_4. - Highlights: • Crystallographically aligned, phase pure CuCr_2Se_4 were synthesized. • The degree of alignment decreases with annealing time. • The films are ferromagnetic with the easy axis along the direction. • The magnetization is larger than bulk CuCr_2Se_4 or other CuCr_2Se_4 films made to date.

Microscopic evidence for significant ionic disorder in the Yb sup 3 sup + -chain in Yb sub 4 (As sub 1 sub - sub x P sub x) sub 3 : sup 3 sup 1 P NMR studies

CERN Document Server

Tanida, H; Aoki, H; Ochiai, A

2003-01-01

We report unambiguous microscopic evidence from sup 3 sup 1 P NMR under H sub e sub x sub t approx = 7.3 T for significant ionic disorder in the Yb sup 3 sup + chain in Yb sub 4 (As sub 1 sub - sub x P sub x) sub 3 (x=0.05 and 0.40), which have similar characteristic chi(T) and C sub p (T, H sub e sub x sub t) behavior to the antiferromagnetic quantum spin chain (AFQSC) system Yb sub 4 As sub 3. Our conclusion is based on the observations only below the charge-ordering transition at T sub 0 approx = 292 K of clear structures in the spectrum, which can be fitted well by the superpositions of almost equally spaced five Gaussian components. Since perfect ordering of Yb sup 3 sup + in the chain sites would lead to a single-line spectrum also below T sub 0 , the structures should be ascribed to significant ionic disorder in the Yb sup 3 sup + chain and resulting distribution of local configurations of Yb sup 3 sup + in the eight nearest-neighboring Yb sites around sup 3 sup 1 P. Quantitative comparisons with a sim...

Structural specifics of the condensate prepared by thermal evaporation of alloys of As2S3-Yb systems

International Nuclear Information System (INIS)

Ehfendiev, Eh.G.; Mamedov, A.I.; Il'yasov, T.M.; Rustamov, P.G.

1987-01-01

The problem aimed at preparation of the films of As 2 S 3 -Yb system, at studying their substructure depending on condensation conditions and defining noncrystallinity region of this system in the film state, is formulated. It is shown that in representative samples of As 2 S 3 -Yb system the vitrification region is extended up to 7 at.% Yb, in the films noncrystallinity region is extended up to 30 at.% Yb. With up to 30 at.% increase of ytterbium amount in initial alloys a tendency to crystallization in amorphous condensate structure is noticed. In evaporation of As 2 S 3 + 40 at.% Yb and As 2 S 3 + 50 at.% Yb, unknown in the film state YbAs 2 S 4 , Yb 3 As 4 S 9 and YbAs 4 S 7 phases are prepared, and the latter is formed in case of As 2 S 3 + 50 at.% Yb alloy at small evaporation rates (∼10 A/s). Substructure of As 2 S 3 + 50 at.% Yb alloy prepared condensate is more dependent on evaporation rate than in evaporation of As 2 S 3 + 40 at.% Yb alloy. In this case, evaporation rates being ∼ 100 A/s, the condensate has a polycrystal structure, and at small rates of ∼ 10 A/c, condensate structure is primarily blocked

Nanomechanical properties of GaSe thin films deposited on Si(1 1 1) substrates by pulsed laser deposition

International Nuclear Information System (INIS)

Jian, Sheng-Rui; Juang, Jenh-Yih; Luo, Chih-Wei; Ku, Shin-An; Wu, Kaung-Hsiung

2012-01-01

Highlights: ► GaSe thin films are grown by PLD. ► Structural properties of GaSe thin films are measured by XRD. ► Hardness and Young’s modulus of GaSe thin films are measured by nanoindentation. - Abstract: The correlations between the crystalline structure and mechanical properties of GaSe thin films were investigated by means of X-ray diffraction (XRD) and nanoindentation techniques. The GaSe thin films were deposited on Si(1 1 1) substrates deposited at various deposition temperatures using pulsed laser deposition (PLD). The XRD results indicate that all the GaSe thin films are pure hexagonal phase with highly (0 0 0 l)-oriented characteristics. Nanoindentation results revealed apparent discontinuities (so-called multiple “pop-in” events) in the load-displacement curve, while no discontinuity was observed in the unloading segment of the load-displacement curve. The hardness and Young’s modulus of GaSe thin films determined by the continuous stiffness measurements (CSM) method indicated that both mechanical parameters increased with the increasing deposition temperature with the hardness and the Young’s modulus being increased from 1.2 ± 0.1 to 1.8 ± 0.1 GPa and from 39.6 ± 1.2 to 68.9 ± 2.7 GPa, respectively, as the deposition temperature was raised from 400 to 475 °C. These results suggest that the increased grain size might have played a prominent role in determining the mechanical properties of the PLD-derived GaSe thin films.

13.7%-efficient Zn(Se,OH){sub x}/Cu(In,Ga)(S,Se){sub 2} thin-film solar cell

Energy Technology Data Exchange (ETDEWEB)

Ennaoui, A. [Hahn-Meitner-Institut, Bereich Physikalische Chemie, Berlin (Germany); Blieske, U.; Lux-Steiner, M.Ch. [Hahn-Meitner-Institut, Bereich Festkoerperphysik, Berlin (Germany)

1998-12-01

Cu(In,Ga)Se{sub 2} (CIGS) and related semiconducting compounds have demonstrated their high potential for high-efficiency thin-film solar cells. The highest efficiency for CIGS based thin-film solar cells has been achieved with CdS buffer layers prepared by a solution growth method known as chemical based deposition (CBD). With the aim of developing Cd-free chalcopyrite-based thin-film solar cells, Zn(Se,OH){sub x} buffer layers were deposited by CBD on polycrystalline Cu(In,Ga)(S,Se){sub 2} (CIGSS). A total-area conversion efficiency of 13.7% was certified by the Fraunhofer Institute for Solar Energy Systems. The CIGSS absorber was fabricated by Siemens Solar Industries (California). For device optimisation, the thickness and good surface coverage were controlled by XPS-UPS photoemission spectroscopy. A Zn(Se,OH){sub x} thickness below 7 nm has been found to be optimum for achieving a homogeneous and compact buffer film on CIGSS, with open-circuit photovoltage V{sub oc} = 535 mV, fill factor FF = 70.76% and a high short-circuit photocurrent density J{sub sc} 36.1 mA cm{sup -2}. (Author)

Broadband near infrared quantum cutting in Bi–Yb codoped Y2O3 transparent films on crystalline silicon

International Nuclear Information System (INIS)

Qu Minghao; Wang Ruzhi; Chen Yan; Zhang Ying; Li Kaiyu; Yan Hui

2012-01-01

By a pulsed laser deposition technique the efficient broadband near-infrared downconversion Bi–Yb codoped crystallization Y 2 O 3 transparent films have been grown successfully on Si (1 0 0) substrates. Upon excitation of ultraviolet photon varying from 300 to 400 nm, the near infrared quantum cutting has been obtained, which is originated from the transitions of the transition-metal Bi 3+3 P 1 level to Yb 3+2 F 5/2 level. The downconversion quantum efficiency of films is estimated to be 152%. The transparent Y 2 O 3 films may have potential application in enhancing the conversion efficiency of crystalline Si solar cells. - Highlights: ► The downconversion Y 2 O 3 :Bi,Yb films has good transparency. ► Y 2 O 3 :Bi,Yb films possess a broadband absorption in the UV region of 300–400 nm. ► The films may have potential application in enhancing the efficiency of c-Si cells.

Photon up-converting (Yb,Er){sub 2}O{sub 3} thin films by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Tuomisto, Minnea [Department of Chemistry, University of Turku (Finland); Doctoral Programme in Physical and Chemical Sciences, University of Turku Graduate School (UTUGS), Turku (Finland); Giedraityte, Zivile; Karppinen, Maarit [Department of Chemistry and Materials Science, School of Chemical Engineering, Aalto University (Finland); Lastusaari, Mika [Department of Chemistry, University of Turku (Finland); Turku University Centre for Materials and Surfaces (MatSurf), Turku (Finland)

2017-06-15

We report up-converting (Yb,Er){sub 2}O{sub 3} thin films grown with the atomic layer deposition (ALD) technique. The films are crystalline and show a homogeneous morphology with a roughness less than 1 nm for 40 nm thick films. High-intensity near-infrared (NIR) to green and red two-photon up-conversion emission is obtained with 974 nm excitation through an absorption by Yb{sup 3+}, followed by a Yb{sup 3+}-Er{sup 3+} energy transfer and emission from Er{sup 3+}. The ALD technique promises to be excellent for producing up-converting films for many applications such as near-infrared radiation absorbing layers for solar cells and sensors in point-of-care biomedical diagnostics. Schematic picture of the ALD-grown (Yb,Er){sub 2}O{sub 3} thin film including the up-conversion emission spectra. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Phase diagram of Se-CaIn4Se7 system

International Nuclear Information System (INIS)

Musaeva, R.I.; Aliev, I.I; Ismailova, F.I; Aliev, A.A

2011-01-01

Full text: The Se-CaIn 4 Se 7 system has been studied using methods of differential thermal analysis, X-ray diffraction, micro structural analysis, density measurements and its phase diagram has been constructed. It has been established that the section Se-CaIn 4 Se 7 is a quasibinary section of the ternary system Ca-In-Se. At room temperature, on the basis of CaIn 2 Se 4 and Se no solid solution has been found

Improving the photoluminescence response of Er-Tm: Al2O3 films by Yb codoping

International Nuclear Information System (INIS)

Xiao Zhisong; Serna, R.; Afonso, C.N.; Cheng Guoan; Vickridge, I.

2007-01-01

Amorphous Al 2 O 3 films doped with Er, Tm and Yb have been prepared by pulsed laser deposition. A broadband emission in the range 1400-1700 nm with two peaks around 1540 and 1640 nm has been observed, both in the Er-Tm and Er-Tm-Yb codoped films. The Tm-related photoluminescence (PL) intensity at 1640 nm is enhanced when codoping with Yb thus suggesting the existence of multiple energy transfer processes from Yb to Er and Er to Tm. The Er-Tm-Yb codoped film exhibits a broadband emission with a full-width half-maximum of 184 nm similar to that of the film codoped with Tm and Er but having higher Tm to Er concentration ratio and higher PL lifetime values

The recombination channels of luminescence excitation in YAG:Yb single crystalline films

International Nuclear Information System (INIS)

Zakharko, Ya.M.; Luchechko, A.P.; Ubizskii, S.B.; Syvorotka, I.I.; Martynyuk, N.V.; Syvorotka, I.M.

2007-01-01

Absorption and emission spectra, luminescence decay kinetics and thermostimulated luminescence of X-ray irradiated YAG:Yb single crystalline films were studied. Two emission bands peaked at 420 and 488 nm have been detected in the investigated films. The strong thermal quenching of luminescence band at 488 nm was observed above 160 K. The influence of growth conditions and annealing in air on the lifetime of Yb 3+ ion excited state in the IR spectral region have been revealed. The recombination mechanisms of the f-f transition at Yb 3+ ion excitation, as well as the mechanism of lifetime shortening for the excited Yb 3+ luminescence have been discussed

Sequential growth of sandwiched NaYF{sub 4}:Yb/Er@NaYF{sub 4}:Yb@NaNdF{sub 4}:Yb core–shell–shell nanoparticles for photodynamic therapy

Energy Technology Data Exchange (ETDEWEB)

Peng, Huang-Yong; Ding, Bin-Bin; Ma, Yin-Chu [Department of Medical Materials and Rehabilitation Engineering, School of Medical Engineering, Hefei University of Technology, Hefei 230009 (China); Sun, Shi-Qi [State Key Laboratory of Veterinary Etiological Biology and Key Laboratory of Animal Virology of Ministry of Agriculture, Lanzhou Veterinary Research Institute, Chinese Academy of Agricultural Sciences, Xujiaping 1, Lanzhou, Gansu 730046 (China); Tao, Wei [Department of Medical Materials and Rehabilitation Engineering, School of Medical Engineering, Hefei University of Technology, Hefei 230009 (China); Guo, Yan-Chuan [Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Guo, Hui-Chen, E-mail: ghch-2004@hotmail.com [State Key Laboratory of Veterinary Etiological Biology and Key Laboratory of Animal Virology of Ministry of Agriculture, Lanzhou Veterinary Research Institute, Chinese Academy of Agricultural Sciences, Xujiaping 1, Lanzhou, Gansu 730046 (China); Yang, Xian-Zhu, E-mail: yangxz@hftu.edu.cn [Department of Medical Materials and Rehabilitation Engineering, School of Medical Engineering, Hefei University of Technology, Hefei 230009 (China); Qian, Hai-Sheng, E-mail: shqian@hfut.edu.cn [Department of Medical Materials and Rehabilitation Engineering, School of Medical Engineering, Hefei University of Technology, Hefei 230009 (China)

2015-12-01

Graphical abstract: The monodisperse elliptical NaYF{sub 4}:Yb/Er@NaYF{sub 4}:Yb@NaNdF{sub 4}:Yb core–shell–shell nanoparticles have been synthesized successfully by a facile sequential growth process, which can be used as transducer for photodynamic therapy of cancer cells. - Highlights: • The NaYF{sub 4}:Yb/Er@NaYF{sub 4}:Yb@NaNdF{sub 4}:Yb nanoparticles have been fabricated successfully. • The as-prepared nanoparticles show strong fluorescence excited at 980 or 808 nm. • The nanoparticles were transferred into the aqueous phase via a facile process. • Photosensitizers were loaded into the composites for photodynamic therapy. - Abstract: Upconversion (UC) nanostructures have attracted much interest for their extensive biological applications. In this work, we describe a sequential synthetic route to prepare sandwiched NaYF{sub 4}:Yb/Er@NaYF{sub 4}:Yb@NaNdF{sub 4}:Yb core–shell upconversion nanoparticles. The as-prepared products were investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM, JEM 2100F), respectively. The as-prepared core–shell nanoparticles of NaYF{sub 4}:Yb/Er@NaYF{sub 4}:Yb@NaNdF{sub 4}:Yb are composed of elliptical nanoparticles with a length of 80 nm and width of 42 nm, which show efficient upconversion fluorescence excited at 808 nm indicating the formation of core–shell–shell sandwiched nanostructures. In addition, the as-prepared sandwiched NaYF{sub 4}:Yb/Er@NaYF{sub 4}:Yb@NaNdF{sub 4}:Yb core–shell upconversion nanoparticles also show strong upconversion fluorescence excited at 980 nm. Amphiphilic mPEG{sub 2k}-b-PEBEP{sub 6K} copolymers (denoted as PPE) were chosen to transfer these hydrophobic UCNPs into the aqueous phase for biological application. In vitro photodynamic therapy of cancer cells show that the viability of cells incubated with the nanoparticles loaded with MC 540 was significantly lower as compared to the nanoparticles without photosensitizers exposed to NIR laser.

1050 dB/cm gain in a 57.5at.% Yb-doped KGd(WO4)2 thin film at 981 nm

NARCIS (Netherlands)

Yong, Yean Sheng; Aravazhi, S.; Vázquez-Córdova, Sergio Andrés; García Blanco, Sonia Maria; Pollnau, Markus

We present the experimental and numerical gain results in a KGd(WO4)2 thin-film with >50% Yb concentration. The record-high measured gain of ~1050 dB/cm shows that it is promising for realizing short-device length high-gain waveguide amplifirs.

Magnetic and magnetocaloric properties of La{sub 1.4-x}Yb{sub x}Ca{sub 1.6}Mn{sub 2}O{sub 7}

Energy Technology Data Exchange (ETDEWEB)

Himcinschi, C. [Babes-Bolyai Univ., Cluj-Napoca (Romania). Faculty of Physics; GSI, Strasbourg (France). Inst. de Physique et Chemie des Materiaux; Burzo, E. [Babes-Bolyai Univ., Cluj-Napoca (Romania). Faculty of Physics; Deville, J.P. [GSI, Strasbourg (France). Inst. de Physique et Chemie des Materiaux

2001-07-01

Magnetic and magnetocaloric properties of La{sub 1.4-x}Yb{sub x}Ca{sub 1.6}Mn{sub 2}O{sub 7} system were studied. Polycrystalline samples with x = 0 and 0.2 were prepared by solid state reaction. Magnetic measurements show that Curie temperatures decrease from 246 K for x = 0 down to 211 K for x = 0.2. The temperature dependences of the magnetic entropy change {delta}S{sub M}, show peaks close to the magnetic transition temperatures. Peak values of {delta}S{sub M} = 2.7 J/kg K and 2.1 J/kg K were obtained for compositions x = 0 and 0.2. The decrease in {delta}S{sub M} when changing composition was correlated with the diminution of exchange interactions. (orig.)

Thermoelectric prospects of chemically deposited PbSe and SnSe thin films

Science.gov (United States)

Nair, P. K.; Martínez, Ana Karen; Rosa García Angelmo, Ana; Barrios Salgado, Enue; Nair, M. T. S.

2018-03-01

Thin films of PbSe of 400-600 nm in thickness, were obtained via chemical deposition from a solution containing lead nitrate, thiourea and selenosufate. SnSe thin films of 90-180 nm in thickness, were also obtained by chemical deposition from a solution containing selenosulfate. Optical and electrical properties of these thin films were significantly altered by heating them in selenium vapor at 300 °C. Thin film PbSe has a bandgap (Eg) of 1.17 eV (direct gap, forbidden transitions), which decreases to 0.77 eV when it has been heated. Its electrical conductivity (σ) is p-type: 0.18 Ω-1 cm-1 (as-prepared), and 6.4 Ω-1 cm-1 when heated. Thin film SnSe is of orthorhombic crystalline structure which remains stable when heated at 300 °C, but its Eg increases from 1.12 eV (indirect) in as-prepared film to 1.5 eV (direct, forbidden transitions) upon heating. Its electrical conductivity is p-type, which increases from 0.3 Ω-1 cm-1 (as-prepared) to 1 Ω-1 cm-1 when heated (without Se-vapor). When SnSe film is heated at 300 °C in the presence of Se-vapor, they transform to SnSe2, with Eg of 1.5 eV (direct, forbidden) with n-type electrical conductivity, 11 Ω-1 cm-1. The Seebeck coefficient for the PbSe films is: +0.55 mV K-1 (as prepared) and +0.275 mV K-1 (heated); for SnSe films it is: +0.3 mV K-1 (as prepared) and +0.20 mV K-1 (heated); and for SnSe2 film, - 0.35 mV K-1. A five-element PbSe-SnSe2-PbSe-SnSe2-PbSe thermoelectric device demonstrated 50 mV for a temperature difference ΔT = 20 °C (2.5 mV K-1). For SnSe-SnSe2-SnSe-SnSe2-SnSe device, the value is 15 mV for ΔT = 20 °C (0.75 mV K-1). Prospect of these thin films in thermoelectric devices of hybrid materials, in which the coatings may be applied on distinct substrate and geometries is attractive.

Enhanced photovoltaic performance of dye-sensitized solar cells based on NaYF4:Yb(3+), Er(3+)-incorporated nanocrystalline TiO2 electrodes.

Science.gov (United States)

Zhu, Guang; Wang, Hongyan; Zhang, Quanxin; Zhang, Li

2015-08-01

Near infrared to visible up-conversion of light by rare earth ion-doped phosphors (NaYF4:Yb(3+), Er(3+)) that convert multiple photons of lower energy to higher energy photons offer new possibilities for improved performance of photovoltaic devices. Here, up-conversion phosphor NaYF4:Yb(3+), Er(3+) doped nanocrystalline TiO2 films are designed and used as a electrode for dye-sensitized solar cells, and the photovoltaic performance of DSSCs based on composite electrodes are investigated. The results show the cell with NaYF4:Yb(3+), Er(3+) achieves a power conversion efficiency of 7.65% under one sun illumination (AM 1.5G, 100mWcm(-2)), which is an increase of 14% compared to the cell without NaYF4:Yb(3+), Er(3+) (6.71%). The performance improvement is attributed to the dual effects of enhanced light harvesting from extended light absorption range and increased light scattering, and lower electron transfer resistance. Copyright © 2015 Elsevier Inc. All rights reserved.

Nonlinear optical diagnostic of semimagnetic semiconductors Pb1-xYb xX (X = S, Se, Te)

International Nuclear Information System (INIS)

Nouneh, K.; Kityk, I.V.; Viennois, R.; Benet, S.; Charar, S.; Plucinski, K.J.

2007-01-01

Nonlinear optical measurements were performed to elucidate the influence of magnetic ions on the behavior of charge carriers in magnetic semiconductors-Pb 1-x Yb x X (X = S, Se, Te at x = 1-3%). It was shown that nonlinear optical methods could be used as sensitive tools for investigations of electron-phonon anharmonicity near low-temperature semiconductor-insulator phase transitions. There exists a difference between surface and bulk-like contributions to the nonlinear optical effects. It was shown that only low-temperature Two Photon Absorption (TPA) oscillator may be related to the number of the electron-phonon anharmonic modes responsible for the observed phase transformation. The explanation of the anomalous temperature dependences is given in accordance with dipole momentum's behaviors determined by low-temperature spin-spin interactions and by electron-phonon anharmonic interactions. We have discovered that low-temperature dependence of specific heat of Pb 1-x R x Te (R = Yb, Pr with x = 3% and 1.6%, respectively) exhibits a non-magnetic order caused by large electron-phonon contributions and structural disorder effects

Synthesis, structure and magnetic properties of crystallographically aligned CuCr{sub 2}Se{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Esters, Marco [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States); Liebig, Andreas [Institut für Physik, Universität Augsburg, 86159 Augsburg (Germany); Ditto, Jeffrey J.; Falmbigl, Matthias [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States); Albrecht, Manfred [Institut für Physik, Universität Augsburg, 86159 Augsburg (Germany); Johnson, David C., E-mail: davej@uoregon.edu [Department of Chemistry, University of Oregon, Eugene, OR 97403 (United States)

2016-06-25

We report the low temperature synthesis of highly textured CuCr{sub 2}Se{sub 4} thin films using the modulated elemental reactant (MER) method. The structure of CuCr{sub 2}Se{sub 4} is determined for the first time in its thin film form and exhibits cell parameters that are smaller than found in bulk CuCr{sub 2}Se{sub 4}. X-ray diffraction and precession electron diffraction show a strong degree of crystallographic alignment of the crystallites, where the <111> axis is oriented perpendicular to the substrate surface, while being rotationally disordered within the plane. Temperature and field dependent in-plane and out-of-plane magnetization measurements show that the film is ferromagnetic with a Curie temperature of 406 K CuCr{sub 2}Se{sub 4} synthesized utilizing the MER method shows stronger magnetic anisotropy (effective anisotropy: 1.82 × 10{sup 6} erg cm{sup −3}; shape anisotropy: 1.07 × 10{sup 6} erg cm{sup −3}), with the easy axis lying out of plane, and a larger magnetic moment (6 μ{sub B}/f.u.) than bulk CuCr{sub 2}Se{sub 4}. - Highlights: • Crystallographically aligned, phase pure CuCr{sub 2}Se{sub 4} were synthesized. • The degree of alignment decreases with annealing time. • The films are ferromagnetic with the easy axis along the <111> direction. • The magnetization is larger than bulk CuCr{sub 2}Se{sub 4} or other CuCr{sub 2}Se{sub 4} films made to date.

Photoinduced crystallization and space charge limited current through Au/Se92.7S7.3/Au thin films

International Nuclear Information System (INIS)

EL-Barry, A.M.A.

2007-01-01

The present paper reports a study of photoinduced crystallization in thermally evaporated Se 92.7 S 7.3 films. The photoinduced crystallization was achieved by shining white light (from 25 mW/cm 2 tungsten lamp) at room temperature for different exposure times up to 5.184 Ms. The analysis of X-ray diffraction (XRD) patterns indicated that the grain size (D), the strain (ζ) and the dislocation density (δ) are photoaging dependent. The capacitance-voltage data confirmed that the relative permittivity of the films is equal to ∼10.31. Room temperature current density voltage characteristics of Au/Se 92.7 S 7.3 /Au films showed Ohmic conduction in the lower voltage range ∼<1 V, and space charge limited conductivity (SCLC) in the relatively high-voltage range. The SCLC was controlled by an exponential distribution of traps above the valence band. The temperature dependence of the current density in accordance with the theory for the exponential trap distributions allowed the calculation of some essential parameters such as; trap concentration, characteristic temperature, and the trap density

Effects of the Ho{sup 3+}/Yb{sup 3+} concentration ratio on the structure and photoluminescence of ZnO films

Energy Technology Data Exchange (ETDEWEB)

Xu, Boxu [School of Materials Science and Engineering, Tianjin Polytechnic University, Tianjin 300387 (China); Wang, Pei [Auditing Department, Tianjin Polytechnic University, Tianjin 300387 (China); Meng, Xiaoqi; Zou, Kaishun [School of Materials Science and Engineering, Tianjin Polytechnic University, Tianjin 300387 (China); Liu, Juncheng, E-mail: jchliu@tjpu.edu.cn [School of Materials Science and Engineering, Tianjin Polytechnic University, Tianjin 300387 (China)

2016-07-15

To improve the efficiency of photoluminescent films, this study investigates the effects of the Ho{sup 3+}/Yb{sup 3+} concentration ratio on the structure and up-conversion photoluminescence of ZnO films prepared by the sol–gel method and the spin-coating technique. ZnO maintained its hexagonal wurtzite structure after doping with rare earth ions. The ZnO films consist of round granules, the average size of which increases as the Ho{sup 3+}/Yb{sup 3+} concentration ratio increases. Once the ratio exceeds 1:2, the film's granules significantly coarsen, and the surface roughness slightly increases. When the film is pumped with a 980-nm laser, two intense emission bands are observed in the up-conversion emission spectrum, with a green band centered at 550 nm and a red band centered at 660 nm, corresponding to the Ho{sup 3+}: {sup 5}S{sub 2}/{sup 5}F{sub 4}→{sup 5}I{sub 8}, and {sup 5}F{sub 5}→{sup 5}I{sub 8} transitions, respectively. In addition, as the Ho{sup 3+}/Yb{sup 3+} concentration ratio increases, the intensity of the film's upconversion luminescence first increases and then decreases, reaching a maximum at a concentration ratio of 1:2, with a peak of about four times the minimum value.

Diode-pumped Yb:Sr5(PO4)3F laser performance

International Nuclear Information System (INIS)

Marshall, C.D.; Payne, S.A.; Smith, L.K.

1995-01-01

The performance of the first diode-pumped Yb 3+ -doped Sr 5 (PO 4 ) 3 F (Yb:S-FAP) laser is discussed. We found the pumping dynamics and extraction cross-sections of Yb:S-FAP crystals to be similar to those previously inferred by purely spectroscopic techniques. The saturation fluence for pumping was measured to be 2.2 J/cm 2 using three different methods based on either the spatial, temporal, or energy transmission properties of a Yb:S-FAP rod. The small signal gain implies an emission cross section of 6.0 x 10 -20 cm 2 that falls within error bars of the previously reported value of 7.3 x 10 -20 cm 2 , obtained from spectroscopic techniques. Up to 1.7 J/cm 3 of stored energy density was achieved in a 6 x 6 x 44 mm Yb:S-FAP amplifier rod. An InGaAs diode array has been fabricated that has suitable specifications for pumping a 3 x 3 x 30 mm Yb:S-FAP rod. In a free running configuration diode-pumped slope efficiencies up to 43% were observed with output energies up to ∼0.5 J per 1 ms pulse. When the rod was mounted in a copper block for cooling, 13 W of average power was produced with power supply limited operation at 70 Hz and 500 μs pulses

Transportin-1-dependent YB-1 nuclear import

International Nuclear Information System (INIS)

Mordovkina, Daria A.; Kim, Ekaterina R.; Buldakov, Ilya A.; Sorokin, Alexey V.; Eliseeva, Irina A.; Lyabin, Dmitry N.; Ovchinnikov, Lev P.

2016-01-01

The DNA/RNA-binding protein YB-1 (Y-box binding protein 1) performs multiple functions both in the cytoplasm and the nucleus of the cell. Generally localized to the cytoplasm, under certain conditions YB-1 is translocated to the nucleus. Here we report for the first time a transport factor that mediates YB-1 nuclear import – transportin-1. The YB-1/transportin-1 complex can be isolated from HeLa cell extract. Nuclear import of YB-1 and its truncated form YB-1 (1-219) in in vitro transport assay was diminished in the presence of a competitor substrate and ceased in the presence of transportin-1 inhibitor M9M. Inhibitors of importin β1 had no effect on YB-1 transport. Furthermore, transport of YB-1 (P201A/Y202A) and YB-1 (1–219) (P201A/Y202A) bearing inactivating mutations in the transportin-1-dependent nuclear localization signal was practically abolished. Together, these results indicate that transportin-1 mediates YB-1 nuclear translocation. - Highlights: • Transportin-1 mediates YB-1 nuclear import. • YB-1 nuclear translocation is diminished in the presence of transportin-1 inhibitors. • Mutations in the PY motif of YB-1 NLS prevent its translocation to the nucleus.

Superconducting Dy1-x(Gd,Yb)xBa2Cu3O7-δ thin films made by Chemical Solution Deposition

DEFF Research Database (Denmark)

Opata, Yuri Aparecido; Wulff, Anders Christian; Hansen, Jørn Otto Bindslev

2016-01-01

Dy1-x(Gd or Yb)xBa2Cu3O7-δ samples were prepared using chemical solution deposition (CSD), based on trifluoroacetate metal-organic decomposition (MOD) methods. X-ray diffraction results demonstrated the formation of the RE123 superconducting phase with a strong in-plane and out-of-plane texture. c...

In{sub 6}Se{sub 7} thin films by heating thermally evaporated indium and chemical bath deposited selenium multilayers

Energy Technology Data Exchange (ETDEWEB)

Ornelas, R.E.; Avellaneda, D. [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Shaji, S. [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Universidad Autonoma de Nuevo Leon-CIIDIT, Apodaca, N.L (Mexico); Castillo, G.A.; Roy, T.K. Das [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon-66450 (Mexico); Universidad Autonoma de Nuevo Leon-CIIDIT, Apodaca, N.L (Mexico)

2012-05-15

Indium selenide (In{sub 6}Se{sub 7}) thin films were prepared via selenization of thermally evaporated indium thin films by dipping in sodium selenosulphate solution followed by annealing in nitrogen atmosphere. First, indium was thermally evaporated on glass substrate. Then, the indium coated glass substrates were dipped in a solution containing 80 ml 0.125 M sodium selenosulphate and 1.5 ml dilute acetic acid (25%) for 5 min. Glass/In-Se layers were annealed at 200-400 Degree-Sign C in nitrogen atmosphere (0.1 Torr) for 30 min. X-ray diffraction studies showed the formation of monoclinic In{sub 6}Se{sub 7}. Morphology of the thin films formed at different conditions was analyzed using Scanning electron microscopy. The elemental analysis was done using Energy dispersive X-ray detection. Electrical conductivity under dark and illumination conditions was evaluated. Optical band gap was computed using transmittance and reflectance spectra. The band gap value was in the range 1.8-2.6 eV corresponding to a direct allowed transition. We studied the effect of indium layer thickness and selenium deposition time on the structure, electrical and optical properties of In{sub 6}Se{sub 7} thin films.

Studies on Cd1Se0.6Te0.4 Thin Films by Spectroscopic and Diffractometer Characterization

Directory of Open Access Journals (Sweden)

Cliff Orori Mosiori

2017-09-01

Full Text Available Cadmium selenide tellurium is a compound containing cadmium, tellurium and selenium elements forming a combined solid. Hall measurements suggest that it is an n-type semiconductor. Related optical studies indicate that is transparent to infra-red radiation. Structural studies clearly show that it has a wurtzite, sphalerite crystalline forms. Cadmium is a toxic heavy metal, and selenium is only toxic in large amounts or doses. By this toxicity, cadmium selenide is a known to be carcinogen to humans; however, this does not stop investigating it for optoelectronic applications. Current research has narrowed down to investigating cadmium selenide when in the form of nanoparticles. Cadmium selenide finds applications has found applications in opto-electronic devices like laser diodes, biomedical imaging, nano-sensing, high-efficiency solar cells and thin-film transistors. By chemical bath deposition, Cd1Se0.6Te0.4 thin films were grown onto glass. Tellurium was gradually introduced as an impurity and its crystalline structure and optical properties were investigated by XRD and UV-VIS spectroscopy. The main Cd1Se0.6Te0.4/glass characteristics were correlated with the conditions of growing and post-growth treatment and it was found out that films were homogeneous films with controllable thickness onto the glass substrate and suitable for n-type “sandwich” heterostructures applications. Comparison of the intensities of equivalent reflexions provided a test for the internal consistency of the measurements. Equivalent reflexions in two specimens differed on average by 1.4 % and 0.6% from the mean measured intensity, attesting to the high internal consistency of measurements from extended-face crystals. By comparison from data obtained from all samples showed their average deviation from the mean to be 0.9 %.

Spin re-orientation in heavy fermion system α - YbAl1 - x FexB4

Science.gov (United States)

Wu, Shan; Broholm, C.; Kuga, K.; Suzuki, Shintaro; Nakatsuji, S.; Mourigal, M.; Stone, M.; Tian, Wei; Qiu, Y.; Rodriguez-Rivera, Jose

Non centro-symmetric α - YbAlB4 has a heavy Fermi liquid ground state and shares many characteristics with centro-symmetric β - YbAlB4 . Both isomorphs display intermediate valence, associated with a fluctuation scale of T0 = 200 K and a Kondo lattice scale of T* = 8 K. Unlike β - YbAlB4 , α - YbAlB4 is at the boundary of a transition from a Fermi liquid metallic state to an antiferromagnetic (AFM) insulating state, driven by Fe substitution of Al. Magnetization and specific heat measurements reveal two different antiferromagnetic phases with TN = 9 K and TN = 2 K for Fe concentration above and below x =0.07. We report single crystal neutron scattering experiments on Fe doped YbAlB4 with x =0.035 and x =0.125. While the ordering wave vector is identical, k -> = (1 , 0 , 0) , the spin orientation switches from c to a with increasing Fe concentration. This suggests different anisotropic hybridization between 4f and conduction electrons that we confirmed by determining the crystal field levels. Supported by DOE, BES through DE-FG02-08ER46544.

Phase stability of AlYB14 sputtered thin films

International Nuclear Information System (INIS)

Koelpin, Helmut; Music, Denis; Emmerlich, Jens; Schneider, Jochen M; Henkelman, Graeme; Munnik, Frans

2009-01-01

AlYB 14 (Imma) thin films were synthesized by magnetron sputtering. On the basis of x-ray diffraction, no phases other than crystalline AlYB 14 could be identified. According to electron probe microanalysis, energy dispersive x-ray analysis and elastic recoil detection analysis, the Al and Y occupancies vary in the range of 0.73-1.0 and 0.29-0.45, respectively. Density functional theory based calculations were carried out to investigate the effect of occupancy on the stability of Al x Y y B 14 (x,y = 0.25, 0.5, 0.75, 1). The mean effective charge per icosahedron and the bulk moduli were also calculated. It is shown that the most stable configuration is Al 0.5 YB 14 , corresponding to a charge transfer of two electrons from the metal atoms to the boron icosahedra. Furthermore, it is found that the stability of a configuration is increased as the charge is homogeneously distributed within the icosahedra. The bulk moduli for all configurations investigated are in the range between 196 and 220 GPa, rather close to those for known hard phases such as α- Al 2 O 3 .

Effect of annealing temperature on structural and electrical properties of high-κ YbTixOy gate dielectrics for InGaZnO thin film transistors

International Nuclear Information System (INIS)

Pan, Tung-Ming; Chen, Fa-Hsyang; Hung, Meng-Ning

2015-01-01

This paper describes the effect of annealing temperature on the structural properties and electrical characteristics of high–κ YbTi x O y gate dielectrics for indium–gallium–zinc–oxide (IGZO) thin-film transistors (TFTs). X-ray diffraction, x-ray photoelectron spectroscopy and atomic force microscopy were used to study the structural, chemical and morphological features, respectively, of these dielectric films annealed at 200, 300 and 400 °C. The YbTi x O y IGZO TFT that had been annealed at 400 °C exhibited better electrical characteristics, such as a small threshold voltage of 0.53 V, a large field-effect mobility of 19.1 cm 2 V −1 s −1 , a high I on /I off ratio of 2.8 × 10 7 , and a low subthreshold swing of 176 mV dec. −1 , relative to those of the systems that had been subjected to other annealing conditions. This result suggests that YbTi x O y dielectric possesses a higher dielectric constant as well as lower oxygen vacancies (or defects) in the film. In addition, the instability of YbTi x O y IGZO TFT was studied under positive gate-bias stress and negative gate-bias stress conditions. (paper)

The effects of energy transfer on the Er{sup 3+} 1.54 {mu}m luminescence in nanostructured Y{sub 2}O{sub 3} thin films with heterogeneously distributed Yb{sup 3+} and Er{sup 3+} codopants

Energy Technology Data Exchange (ETDEWEB)

Hoang, J.; Chang, J. P. [Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, California 90095 (United States); Schwartz, Robert N.; Wang, Kang L. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States)

2012-09-15

We report the effects of heterogeneous Yb{sup 3+} and Er{sup 3+} codoping in Y{sub 2}O{sub 3} thin films on the 1535 nm luminescence. Yb{sup 3+}:Er{sup 3+}:Y{sub 2}O{sub 3} thin films were deposited using sequential radical enhanced atomic layer deposition. The Yb{sup 3+} energy transfer was investigated for indirect and direct excitation of the Yb {sup 2}F{sub 7/2} state using 488 nm and 976 nm sources, respectively, and the trends were described in terms of Forster and Dexter's resonant energy transfer theory and a macroscopic rate equation formalism. The addition of 11 at. % Yb resulted in an increase in the effective Er{sup 3+} photoluminescence (PL) yield at 1535 nm by a factor of 14 and 42 under 488 nm and 976 nm excitations, respectively. As the Er{sub 2}O{sub 3} local thickness was increased to greater than 1.1 A, PL quenching occurred due to strong local Er{sup 3+}{r_reversible} Er{sup 3+} excitation migration leading to impurity quenching centers. In contrast, an increase in the local Yb{sub 2}O{sub 3} thickness generally resulted in an increase in the effective Er{sup 3+} PL yield, except when the Er{sub 2}O{sub 3} and Yb{sub 2}O{sub 3} layers were separated by more than 2.3 A or were adjacent, where weak Yb{sup 3+}{r_reversible} Er{sup 3+} coupling or strong Yb{sup 3+}{r_reversible} Yb{sup 3+} interlayer migration occurred, respectively. Finally, it is suggested that enhanced luminescence at steady state was observed under 488 nm excitation as a result of Er{sup 3+}{yields} Yb{sup 3+} energy back transfer coupled with strong Yb{sup 3+}{r_reversible} Yb{sup 3+} energy migration.

Charge transfer luminescence of Yb3+ ions in LiY1-xYbxP4O12 phosphates

International Nuclear Information System (INIS)

Stryganyuk, G; Zazubovich, S; Voloshinovskii, A; Pidzyrailo, M; Zimmerer, G; Peters, R; Petermann, K

2007-01-01

Spectral-kinetic studies have been performed for LiY 1-x Yb x P 4 O 12 (x = 0; 0.1; 0.9) phosphates at T = 8-320 K using synchrotron radiation for excitation within the 5-17 eV energy range. Mechanisms for the excitation of Yb 3+ charge transfer and f-f luminescence are discussed. The quasimolecular character of Yb 3+ charge transfer luminescence (CTL) is pointed out. The central Yb 2+ ion and hole delocalized over the surrounding ligands are proposed for consideration as a 'charge transfer cluster' (Yb 2+ CT cluster). Possible mechanisms of Yb 3+ CTL quenching are presumed

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

Science.gov (United States)

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

Activation of visible up-conversion luminescence in transparent and conducting ZnO:Er:Yb films by laser annealing

International Nuclear Information System (INIS)

Lluscà, M.; López-Vidrier, J.; Lauzurica, S.; Sánchez-Aniorte, M.I.; Antony, A.; Molpeceres, C.; Hernández, S.; Garrido, B.; Bertomeu, J.

2015-01-01

Transparent and conducting ZnO:Er:Yb thin films with visible up-conversion (660-nm emission under 980-nm excitation) were fabricated by RF magnetron sputtering. The as-deposited films were found to be transparent and conducting and the activation of the Er ions in these films to produce up-conversion luminescence was achieved by different post-deposition annealing treatments in air, vacuum or by laser annealing using a Nd:YVO 4 laser. The structural, electrical and optical properties and the up-conversion efficiency of these films were found to be strongly influenced by the annealing method, and a detailed study is reported in this paper. It has been demonstrated that, although the air annealing was the most efficient in terms of up-conversion, laser annealing was the only method capable of activating Er ions while preserving the electrical conductivity of the doped films. It has been shown that a minimum energy was needed in laser annealing to optically activate the rare earth ions in the ZnO host material to produce up-conversion. Up-converting and transparent conducting ZnO:Er:Yb films with an electrical resistivity of 5×10 −2 Ω cm and transparency ~80% in the visible wavelength range has been achieved by laser annealing. - Highlights: • Transparent and conducting ZnO:Er:Yb films were grown via magnetron sputtering. • Post-annealing ZnO:Er:Yb is needed to optically activate Er ions. • Visible up-conversion emission at 660 nm is observed under 980 nm excitation. • A transparent and conducting up-converter is achieved by laser annealing

Synthesis and characterisation of Cu{sub 2}ZnSnSe{sub 4} thin films prepared via a vacuum evaporation-based route

Energy Technology Data Exchange (ETDEWEB)

Volobujeva, O., E-mail: v.olga@staff.ttu.ee; Bereznev, S.; Raudoja, J.; Otto, K.; Pilvet, M.; Mellikov, E.

2013-05-01

Different sequentially stacked binary chalcogenide layers (CuSe, ZnSe, and SnSe) deposited by vacuum evaporation onto molybdenum covered soda-lime glass substrates were used as precursors to form Cu{sub 2}ZnSnSe{sub 4} films. The influence of the stacked binary layer sequence, substrate temperature, both the duration and speed of deposition and the post deposition treatment atmosphere on the structural and the morphological parameters of the Cu{sub 2}ZnSnSe{sub 4} thin films was studied. Our results indicate the possibility of replacing the Se{sub 2} selenisation with a thermal treatment in an SnSe{sub 2} atmosphere to avoid the selenisation of the Mo substrate and MoSe{sub 2} formation. This SnSe{sub 2} treatment forms p-type Cu{sub 2}ZnSnSe{sub 4} films with an optical band-gap of 1.14 eV and a solar cell structure with an efficiency of up to 3%. - Highlights: ► Cu{sub 2}ZnSnSe{sub 4} thin films were grown using binary precursors and selenisation. ► Composition and morphology were studied in dependence of selenisation atmosphere. ► The use of SnSe{sub 2} selenisation allows to avoid Mo substrate selenisation. ► The high quality of films is indicated by the value of their E{sub g} = 1.14 eV. ► Cu{sub 2}ZnSnSe{sub 4} thin films were in p-type conductivity and were realized as solar cells.

IBA of ZrO2:Yb/Si thin films produced by the spray pyrolysis method

International Nuclear Information System (INIS)

Andrade, E.; Ramirez, E.B.; Alonso, J.C.; Rocha, M.F.

2008-01-01

A spray pyrolysis method was used to produce thin films of ZrO 2 doped with different Yb concentrations on Si(1 0 0). The films of these ionic semiconductors have potential applications as solid electrolytes in modern ceramic fuel cells of second generation. The determination of the atomic composition of the films is very important because it strongly affects the chemical and thermal stability, as well as electrical properties of the films. A combination of two Ion Beam Analysis (IBA) methods was applied to obtain the atomic composition of the films. A nuclear reaction analysis (NRA) method using a low energy deuterium beam was applied to measure the oxygen content of the films. Heavy ion Rutherford backscattering (HI-RBS) method using a 12 C 3+ beam was applied to measure the Yb and Zr atomic profiles of the samples. X-ray diffraction (XRD) and ellipsometry were also employed to determine structural properties and refractive index of the films, respectively. The IBA, XRD and the ellipsometry supply a wide range of information about the film layers, which can be used for qualification as well as for feedback to the films production

Selenization of mixed metal oxides for dense and ZnSe-free Cu{sub 2}ZnSnSe{sub 4} absorber films

Energy Technology Data Exchange (ETDEWEB)

Deng, Yitao; Chen, Guilin; Pan, Bin; Li, JianMin; Jiang, Guoshun; Liu, Weifeng, E-mail: liuwf@ustc.edu.cn; Zhu, Changfei, E-mail: cfzhu@ustc.edu.cn

2014-04-05

Highlights: • ZnSe-free CZTSe films with large grains was prepared from mixed oxides nanopraticles. • Appearance of Zn{sub 2}SnO{sub 4} in mixed oxides precursors leads to the absence of ZnSe secondary phrase. • To obtain pure CZTSe phase, different treating temperature was used. -- Abstract: Cu{sub 2}ZnSnSe{sub 4} (CZTSe) films were prepared by direct selenization of Cu{sub 2}O, SnO{sub 2} and Zn{sub 2}SnO{sub 4} precursors. Oxides precursors were prepared by baking hydroxides precipitation. In order to obtain ZnSe-free CZTSe films, Zn{sub 2}SnO{sub 4} was used to replace separated ZnO and SnO{sub 2} as one of the precursors. Through X-ray diffraction (XRD), scanning electron microscopy (SEM), it was found that CZTSe films, with micron-sized dense grains, were obtained in our work. From Raman spectra, it was also found that the ZnSe secondary phase was absent after the selenization. An energy bandgap about 0.86 eV was obtained in our work, which confirmed the Stannite-CZTSe structure.

Functional conservation of rice OsNF-YB/YC and Arabidopsis AtNF-YB/YC proteins in the regulation of flowering time

KAUST Repository

Hwang, Yoon-Hyung; Kim, SoonKap; Lee, Keh Chien; Chung, Young Soo; Lee, Jeong Hwan; Kim, Jeong-Kook

2016-01-01

Plant NUCLEAR FACTOR Y (NF-Y) transcription factors play important roles in plant development and abiotic stress. In Arabidopsis thaliana, two NF-YB (AtNF-YB2 and AtNF-YB3) and five NF-YC (AtNF-YC1, AtNF-YC2, AtNF-YC3, AtNF-YC4, and AtNF-YC9) genes regulate photoperiodic flowering by interacting with other AtNF-Y subunit proteins. Three rice NF-YB (OsNF-YB8, OsNF-YB10, and OsNF-YB11) and five rice OsNF-YC (OsNF-YC1, OsNF-YC2, OsNF-YC4, OsNF-YC6, and OsNF-YC7) genes are clustered with two AtNF-YB and five AtNF-YC genes, respectively. To investigate the functional conservation of these NF-YB and NF-YC genes in rice and Arabidopsis, we analyzed the flowering phenotypes of transgenic plants overexpressing the respective OsNF-YB and OsNF-YC genes in Arabidopsis mutants. Overexpression of OsNF-YB8/10/11 and OsNF-YC2 complemented the late flowering phenotype of Arabidopsis nf-yb2 nf-yb3 and nf-yc3 nf-yc4 nf-yc9 mutants, respectively. The rescued phenotype of 35S::OsNF-YC2 nf-yc3 nf-yc4 nf-yc9 plants was attributed to the upregulation of FLOWERING LOCUS T (FT) and SUPPRESSOR OF OVEREXPRESSION OF CONSTANS 1 (SOC1). In vitro and in planta protein–protein analyses revealed that OsNF-YB8/10/11 and OsNF-YC1/2/4/6/7 interact with AtNF-YC3/4/9 and AtNF-YB2/3, respectively. Our data indicate that some OsNF-YB and OsNF-YC genes are functional equivalents of AtNF-YB2/3 and AtNF-YC3/4/9 genes, respectively, and suggest functional conservation of Arabidopsis and rice NF-Y genes in the control of flowering time.

Functional conservation of rice OsNF-YB/YC and Arabidopsis AtNF-YB/YC proteins in the regulation of flowering time

KAUST Repository

Hwang, Yoon-Hyung

2016-01-11

Plant NUCLEAR FACTOR Y (NF-Y) transcription factors play important roles in plant development and abiotic stress. In Arabidopsis thaliana, two NF-YB (AtNF-YB2 and AtNF-YB3) and five NF-YC (AtNF-YC1, AtNF-YC2, AtNF-YC3, AtNF-YC4, and AtNF-YC9) genes regulate photoperiodic flowering by interacting with other AtNF-Y subunit proteins. Three rice NF-YB (OsNF-YB8, OsNF-YB10, and OsNF-YB11) and five rice OsNF-YC (OsNF-YC1, OsNF-YC2, OsNF-YC4, OsNF-YC6, and OsNF-YC7) genes are clustered with two AtNF-YB and five AtNF-YC genes, respectively. To investigate the functional conservation of these NF-YB and NF-YC genes in rice and Arabidopsis, we analyzed the flowering phenotypes of transgenic plants overexpressing the respective OsNF-YB and OsNF-YC genes in Arabidopsis mutants. Overexpression of OsNF-YB8/10/11 and OsNF-YC2 complemented the late flowering phenotype of Arabidopsis nf-yb2 nf-yb3 and nf-yc3 nf-yc4 nf-yc9 mutants, respectively. The rescued phenotype of 35S::OsNF-YC2 nf-yc3 nf-yc4 nf-yc9 plants was attributed to the upregulation of FLOWERING LOCUS T (FT) and SUPPRESSOR OF OVEREXPRESSION OF CONSTANS 1 (SOC1). In vitro and in planta protein–protein analyses revealed that OsNF-YB8/10/11 and OsNF-YC1/2/4/6/7 interact with AtNF-YC3/4/9 and AtNF-YB2/3, respectively. Our data indicate that some OsNF-YB and OsNF-YC genes are functional equivalents of AtNF-YB2/3 and AtNF-YC3/4/9 genes, respectively, and suggest functional conservation of Arabidopsis and rice NF-Y genes in the control of flowering time.

Optical properties of n-CdSe sub 1-x Te sub x polycrystalline thin films

Energy Technology Data Exchange (ETDEWEB)

Gutierrez, M T [Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas, Madrid (Spain). Inst. de Energias Renovables

1991-01-01

Absorption coefficient, {alpha}({lambda}), and energy gap, E{sub g}, of CdSe{sub 1-x}Te{sub x} thin films were determined from the measured transmittance and reflectance at normal incidence of light in the wavelength range 450-2500 nm. The thin film were electrochemically prepared on glass plates coated with conducting thin films of SnO{sub 2}. A combined method from Goodman and Lubberts was used to determine the absorption coefficient and its dependence on the wavelength. The evolution of the optical gap versus the composition of Te in CdSe{sub 1-x}Te{sub x} was made and a value of 1.4 eV of the optical gap was obtained for the composition of CdSe{sub 0.65}Te{sub 0.35}. (orig.).

1.8 μm luminescent properties and energy transfer of Yb{sup 3+}/Tm{sup 3+} co-doped α-NaYF{sub 4} single crystals

Energy Technology Data Exchange (ETDEWEB)

Feng, Zhigang [Key Laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang, 315211 (China); Xia, Haiping, E-mail: hpxcm@nbu.edu.cn [Key Laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang, 315211 (China); Wang, Cheng; Zhang, Zhixiong; Jiang, Dongsheng; Zhang, Jian; He, Shinan; Tang, Qingyang; Sheng, Qiguo; Gu, Xuemei; Zhang, Yuepin [Key Laboratory of Photo-electronic Materials, Ningbo University, Ningbo, Zhejiang, 315211 (China); Chen, Baojiu [Department of Physics, Dalian Maritime University, Dalian, Liaoning Province, 116026 (China); Jiang, Haochuan, E-mail: jianghaochuan@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, The Chinese Academy of Sciences, Ningbo, Zhejiang, 315211 (China)

2016-09-25

This paper reports on successful preparation of α-NaYF{sub 4} single crystals co-doped with ∼1.9 mol% Tm{sup 3+} and various concentrations (3.85 mol%, 7.69 mol%, 11.54 mol%, 15.38 mol%) of Yb{sup 3+} by using a flux-Bridgman method. The fluorescence decay curve was measured to investigate the luminescent properties of the Yb{sup 3+}/Tm{sup 3+} co-doped α-NaYF{sub 4}, and the energy transfer process from Yb{sup 3+} to Tm{sup 3+}; the J-O intensity parameters of Tm{sup 3+} were further calculated and analyzed according to the absorption spectra. Results show that, an intense 1.8 μm emission was achieved with Yb{sup 3+} as sensitizer for Tm{sup 3+} in the α-NaYF{sub 4} single crystal under the excitation of 980 nm LD (Laser Diode) because of the strong energy transfer from Yb{sup 3+} to Tm{sup 3+}. The maximum emission intensity at 1.8 μm is obtained at about 15.38 mol% doping concentration of Yb{sup 3+} when the concentration of Tm{sup 3+} ions is fixed at ∼1.90 mol% in the current research. Moreover, the calculated maximum value of emission cross section at 1.8 μm is 1.63 × 10{sup −20} cm{sup 2} for 3.85 mol% Yb{sup 3+}/1.9 mol% Tm{sup 3+} sample, and the obtained energy transfer rate (W{sub ET}) and energy transfer efficiency (η) are 1543 s{sup −1} and 83.8%, respectively. Our analysis of the fluorescence dynamics indicates that electric dipole-dipole interaction is dominant for the energy transfer from Yb{sup 3+} ions to Tm{sup 3+} ions by using Inokuti-Hirayama’s model. - Highlights: • The Tm{sup 3+}/Yb{sup 3+} co-doped α-NaYF{sub 4} single crystals were grown by Bridgman method. • The 1.8 μm emission intensity is obtained at 15.38 mol% Yb{sup 3+}/1.90 mol% Tm{sup 3+} sample. • The maximum value of emission cross section at 1.8 μm is 1.63 × 10{sup −20} cm{sup 2}. • The energy transfer rate is 1543 s{sup −1} and energy transfer efficiency is 83.8%. • The physical mechanism for energy transfer from Yb{sup 3+} to Tm{sup 3+} ions

Crystalline ordered states of CuIn1−xGaxSe2 (x = 0, 0.3, and 1.0) thin-films on different substrates investigated by Raman scattering spectroscopy

International Nuclear Information System (INIS)

Jeong, A.R.; Jo, W.; Song, M.; Yoon, S.

2012-01-01

Structural properties of Cu(In,Ga)Se 2 absorber layers have been examined for photovoltaic applications. Thin-films with three different chemical compositions, CuInSe 2 (CIS), Cu(In,Ga)Se 2 (CIGS) and CuGaSe 2 (CGS), were grown by co-evaporation on two kinds of substrates: Mo-coated soda-lime glass and bare soda-lime glass. Intriguing morphology and grain-growth behaviors were found in the surface of the films. X-ray diffraction of the films exhibited phase formation of the stoichiometric chalcopyrite phase of the materials while signs of secondary phases like Cu 2 Se and Cu–Se 2 were also observed. The optical transmittance of the films was measured to obtain their optical bandgaps, which were well matched with the bulk values of CIS, CIGS, and CGS, which are 1.1, 1.4, and 1.7 eV, respectively. Using Raman scattering spectroscopy, the A 1 mode was observed to shift from 177 cm −1 for CIS to 189 cm −1 for CGS as the Ga content increased. The films on Mo substrates are likely to have secondary phases, which is not the case for soda-lime glass. An indication of the formation of the CuAu structure is obtained from the CIS thin-films. - Highlights: ► We report structural and optical properties of CIGS films on different substrates. ► Various optical tools were used to characterize the CIGS films. ► Crystalline ordered states were examined by A1 mode of Raman spectra.

Investigation of optical properties and the photocatalytic activity of synthesized YbYO4 nanoparticles and YbVO4/NiWO4 nanocomposites by polymeric capping agents

Science.gov (United States)

Pourmasoud, Saeid; Sobhani-Nasab, Ali; Behpour, Mohsen; Rahimi-Nasrabadi, Mehdi; Ahmadi, Farhad

2018-04-01

YbVO4 nanoparticles YbVO4/NiWO4 nanocomposites were synthesized by simple and new method. The effect of various polymeric capping agents such as Tween 80, Tween 20 and PEG on the shape and size of YbVO4/NiWO4 nanocomposites were investigated. YbVO4/NiWO4 nanocomposites were analyzed through some techniques including, X-ray diffraction (XRD), Fourier-transform infrared (FT-IR) spectroscopy, vibrating sample magnetometer (VSM), thermogravimetry differential thermal analysis (TG-DTA), transmission electron microscopy (TEM), field emission electron microscopy (FESEM), ultraviolet-visible spectroscopy (UV-Vis), and energy-dispersive X-ray spectroscopy (EDX). This attempt is the first study on the photocatalytic performance of the YbVO4/NiWO4 nanocomposites in various conditions such as size of particles and kind of dyes (rhodamine B (Rh B), methylene blue (MB), methyl orange (MO), and phenol red (Ph R)), under visible light.

Alloying of Yb-Cu and Yb-Ag utilizing liquid ammonia metal solutions of ytterbium

International Nuclear Information System (INIS)

Imamura, H.; Yoshimura, T.; Sakata, Y.

2003-01-01

In the course of the studies on preparation of novel compounds using the dissolution of Eu or Yb metals in liquid ammonia, the formation of Yb-Cu and Yb-Ag intermetallic films has been found. When Cu or Ag metal powders were placed in a reactor containing a solution of Yb metal in liquid ammonia, the dissolved Yb readily react with the Cu or Ag metal particles to form surface alloy compounds. X-ray diffraction of Yb-Cu showed that upon thermal treatment above 673 K, the Yb metal deposited on the Cu particles reacted together to be transformed into the YbCu 6.5 intermetallic compound. A characteristic endothermic peak at 749 K, due to alloying of Yb-Cu, was observed by the differential scanning calorimeter measurements. By use of the high reactivity of liquid ammonia metal solutions of ytterbium, it was found that the ytterbium intermetallic films were readily formed under mild conditions. Yb-Cu and Yb-Ag exhibited enhanced catalytic activity for the hydrogenation of ethene as a result of alloying

Synthesis, crystal structure, and magnetism of A{sub 2}Co{sub 12}As{sub 7} (A=Ca, Y, Ce–Yb)

Energy Technology Data Exchange (ETDEWEB)

Tan, Xiaoyan [Department of Chemistry and Biochemistry, Florida State University, Tallahassee, FL 32306 (United States); Ovidiu Garlea, V. [Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Chai, Ping [Department of Chemistry and Biochemistry, Florida State University, Tallahassee, FL 32306 (United States); Geondzhian, Andrey Y. [National Research Nuclear University “Moscow Engineering Physics Institute”, 115409 Moscow (Russian Federation); Yaroslavtsev, Alexander A. [National Research Nuclear University “Moscow Engineering Physics Institute”, 115409 Moscow (Russian Federation); European XFEL GmbH, 22761 Hamburg (Germany); Xin, Yan [National High Magnetic Field Laboratory, Tallahassee, FL 32310 (United States); Menushenkov, Alexey P. [National Research Nuclear University “Moscow Engineering Physics Institute”, 115409 Moscow (Russian Federation); Chernikov, Roman V. [DESY Photon Science, 22603 Hamburg (Germany); Shatruk, Michael, E-mail: shatruk@chem.fsu.edu [Department of Chemistry and Biochemistry, Florida State University, Tallahassee, FL 32306 (United States)

2016-04-15

Ternary intermetallics, A{sub 2}Co{sub 12}As{sub 7} (A=Ca, Y, Ce–Yb), have been synthesized by annealing mixtures of elements in molten Bi at 1223 K. The materials obtained crystallize in the P6{sub 3}/m variant of the Zr{sub 2}Fe{sub 12}P{sub 7} structure type. The unit cell volume shows a monotonic decrease with the increasing atomic number of the rare-earth metal, with the exception of Ce-, Eu-, and Yb-containing compounds. An examination of these outliers with X-ray absorption near edge structures (XANES) spectroscopy revealed mixed valence of Ce, Eu, and Yb, with the average oxidation states of +3.20(1), +2.47(5), and +2.91(1), respectively, at room temperature. Magnetic behavior of A{sub 2}Co{sub 12}As{sub 7} is generally characterized by ferromagnetic ordering of Co 3d moments at 100–140 K, followed by low-temperature ordering of rare-earth 4f moments. The 3d-4f magnetic coupling changes from antiferromagnetic for A=Pr–Sm to ferromagnetic for A=Ce and Eu–Yb. Polarized neutron scattering experiments were performed to support the postulated ferro- and ferrimagnetic ground states for Ce{sub 2}Co{sub 12}As{sub 7} and Nd{sub 2}Co{sub 12}As{sub 7}, respectively. - Graphical abstract: Title arsenides were synthesized by Bi‐flux method. They exhibit mixed valence for A = Ce, Eu, Yb, ferrimagnetism for A = Ca, Y, Pr–Sm, and ferromagnetism for A = Eu–Tm. - Highlights: • A2Co12As7 (A=Ca, Y, Ce–Yb) were synthesized in Bi flux. • Ce, Eu, Yb exhibit mixed valence in the corresponding structures. • The character of 3d‐4f magnetic coupling changes at the half‐filled f shell. • Materials behave as ferrimagnets for A=Ca, Y, Pr–Sm and as ferromagnets for A=Eu–Yb.

Upconversion photoluminescence of epitaxial Yb{sup 3+}/Er{sup 3+} codoped ferroelectric Pb(Zr,Ti)O{sub 3} films on silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yang, E-mail: zhangy_acd@hotmail.com [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Kämpfe, Thomas [Institut für Angewandte Physik, TU Dresden, 01062 Dresden (Germany); Bai, Gongxun [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China); Mietschke, Michael; Yuan, Feifei; Zopf, Michael [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Abel, Stefan [IBM Research GmbH, Saümerstrasse 4, 8803 Rüschlikon (Switzerland); Eng, Lukas M. [Institut für Angewandte Physik, TU Dresden, 01062 Dresden (Germany); Hühne, Ruben [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Fompeyrine, Jean [IBM Research GmbH, Saümerstrasse 4, 8803 Rüschlikon (Switzerland); Ding, Fei, E-mail: f.ding@ifw-dresden.de [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Schmidt, Oliver G. [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Material Systems for Nanoelectronics, Chemnitz University of Technology, Reichenhainer strasse 70, 09107 Chemnitz (Germany)

2016-05-31

Thin films of Yb{sup 3+}/Er{sup 3+} codoped Pb(Zr,Ti)O{sub 3} (PZT:Yb/Er) have been epitaxially grown on the SrTiO{sub 3} buffered Si wafer by pulsed laser deposition. Strong upconversion photoluminescence was observed in the PZT:Yb/Er thin film. Using piezoresponse force microscopy, polar domains in the PZT:Yb/Er film can be reversibly switched with a phase change of 180°. Ferroelectric hysteresis loop shape with a well-saturated response was observed. The epitaxially grown lanthanide-doped PZT on silicon opens up a promising route to the integration of luminescent functional oxides on the silicon platform. - Highlights: • Epitaxial growth of Yb{sup 3+}/Er{sup 3+} codoped Pb(Zr,Ti)O{sub 3} films on SrTiO{sub 3} buffered silicon • Upconversion emissions were obtained from the lanthanide ion doped thin films. • Saturated ferroelectric hysteresis loops were observed. • Polar domains were switched by PFM with a phase change of 180°.

Three new d10 transition metal selenites containing PO4 tetrahedron: Cd7(HPO4)2(PO4)2(SeO3)2, Cd6(PO4)1.34(SeO3)4.66 and Zn3(HPO4)(SeO3)2(H2O)

Science.gov (United States)

Ma, Yun-Xiang; Gong, Ya-Ping; Hu, Chun-li; Mao, Jiang-Gao; Kong, Fang

2018-06-01

Three new d10 transition metal selenites containing PO4 tetrahedron, namely, Cd7(HPO4)2(PO4)2(SeO3)2 (1), Cd6(PO4)1.34(SeO3)4.66 (2) and Zn3(HPO4)(SeO3)2(H2O) (3), have been synthesized by hydrothermal reaction. They feature three different structural types. Compound 1 exhibits a novel 3D network composed of 3D cadmium selenite open framework with phosphate groups filled in the 1D helical tunnels. The structure of compound 2 displays a new 3D framework consisted of 2D cadmium oxide layers bridged by SeO3 and PO4 groups. Compound 3 is isostructural with the reported solids of Co3(SeO3)3-x(PO3OH)x(H2O) when x is equal to 1.0. Its structure could be viewed as a 3D zinc oxide open skeleton with SeO3 and HPO4 polyhedra attached on the wall of the tunnels. They represent the only examples in metal selenite phosphates in addition to the above cobalt compounds. Optical diffuse reflectance spectra revealed that these solids are insulators, which are consistent with the results of band structure computations based on DFT algorithm.

Polarized spectral properties of Yb3+ : Li2Gd4(MoO4)7 crystal: a candidate for tunable and ultrashort pulse lasers

International Nuclear Information System (INIS)

Zhu Haomiao; Chen Yujin; Lin Yanfu; Gong Xinghong; Liao Jinsheng; Chen Xueyuan; Luo Zundu; Huang Yidong

2007-01-01

Detailed polarized spectral properties of a 3.2 at.% Yb 3+ : Li 2 Gd 4 (MoO 4 ) 7 crystal, including absorption cross-section, emission cross-section, up-conversion spectrum and intrinsic fluorescence lifetime, were investigated. The laser potentiality was also evaluated and the results show that this crystal is a good candidate for tunable and ultrashort pulse lasers

Copper interactions in TlCu7S4 and TlCu7Se4

International Nuclear Information System (INIS)

Noren, L.; Delaplane, R.G.; Berger, R.

1999-01-01

Complete text of publication follows. The copper chalcogenides ACu 7 S 4 (A=NH 4 + , Tl + , Rb + ) are quasi-one-dimensional metals at ambient and higher temperatures which is due to the high mobility of copper in these structures. TlCu 7 S 4 and TlCu 7 Se 4 are isostructural compounds, space group I4/m, which can be described on the basis of a TlX 8 cube with two different Cu sites, Cu(1) and Cu(2). Cu(2)-Cu(2) zigzag chains run along the c axis with only 3/4 occupation of the Cu(2) sites. However, these two compounds differ in behaviour on cooling. The sulphide shows a polymorphic first-order transition to the CsAg 7 S 4 type (P4/n) owing to ordering of the vacancies in the Cu(2)-Cu(2) chains. In order to study the nature of the Cu(2) order/disorder in the two title compounds, a series of neutron diffraction measurements (both Bragg and diffuse scattering) were made at several temperatures from 40 to 713 K on the instrument SLAD at Studsvik. The structure at each temperature was modelled using RMC techniques. The resulting configuration show that as the temperature increases, there is a marked increase in the mobility of the Cu atoms in the Cu(2)-Cu(2) chains for TlCu 7 S 4 but not for TlCu 7 Se 4 . This is due to the initial difference in the Cu(2)-Cu(2) distances, only 2.2A for the thiocuprate, but 2.7A in the selenocuprate which explains the relative ease for Cu(2) ordering in the latter case. (author)

Giant spin Hall angle from topological insulator BixSe(1 - x) thin films

Science.gov (United States)

Dc, Mahendra; Jamali, Mahdi; Chen, Junyang; Hickey, Danielle; Zhang, Delin; Zhao, Zhengyang; Li, Hongshi; Quarterman, Patrick; Lv, Yang; Mkhyon, Andre; Wang, Jian-Ping

Investigation on the spin-orbit torque (SOT) from large spin-orbit coupling materials has been attracting interest because of its low power switching of the magnetization and ultra-fast driving of the domain wall motion that can be used in future spin based memory and logic devices. We investigated SOT from topological insulator BixSe(1 - x) thin film in BixSe(1 - x) /CoFeB heterostructure by using the dc planar Hall method, where BixSe(1 - x) thin films were prepared by a unique industry-compatible deposition process. The angle dependent Hall resistance was measured in the presence of a rotating external in-plane magnetic field at bipolar currents. The spin Hall angle (SHA) from this BixSe(1 - x) thin film was found to be as large as 22.41, which is the largest ever reported at room temperature (RT). The giant SHA and large spin Hall conductivity (SHC) make this BixSe(1 - x) thin film a very strong candidate as an SOT generator in SOT based memory and logic devices.

Growth and laser action of Yb: YVO4 crystals with low Yb doping concentration

Science.gov (United States)

Zhong, Degao; Teng, Bing; Li, Jianhong; Zhang, Shiming; Zhang, Bingtao; Wang, Chao; Tian, Xueping; Liu, Junhai

2012-11-01

Yb: YVO4 single crystals with low doping concentrations of Yb3+ less than 0.3 at% were grown using the Czochralski method. The polarized absorption spectra were measured at room temperature. Strong anisotropy exists in the absorption spectra, resulting in almost entirely different features for π-polarization and σ-polarization. The laser emission spectrum and relationship curve between the output power and absorbed pump power (Pabs) were measured. The continuous-wave laser action of Yb: YVO4 single crystal in a range of 1020.4-1026.3 nm was realized by using a high-power diode laser as the pump source.

One-step synthesis of PbSe-ZnSe composite thin film

Directory of Open Access Journals (Sweden)

Abe Seishi

2011-01-01

Full Text Available Abstract This study investigates the preparation of PbSe-ZnSe composite thin films by simultaneous hot-wall deposition (HWD from multiple resources. The XRD result reveals that the solubility limit of Pb in ZnSe is quite narrow, less than 1 mol%, with obvious phase-separation in the composite thin films. A nanoscale elemental mapping of the film containing 5 mol% PbSe indicates that isolated PbSe nanocrystals are dispersed in the ZnSe matrix. The optical absorption edge of the composite thin films shifts toward the low-photon-energy region as the PbSe content increases. The use of a phase-separating PbSe-ZnSe system and HWD techniques enables simple production of the composite package.

Effects of hydrazine on the solvothermal synthesis of Cu2ZnSnSe4 and Cu2CdSnSe4 nanocrystals for particle-based deposition of films

International Nuclear Information System (INIS)

Chiang, Ming-Hung; Fu, Yaw-Shyan; Shih, Cheng-Hung; Kuo, Chun-Cheng; Guo, Tzung-Fang; Lin, Wen-Tai

2013-01-01

The effects of hydrazine on the synthesis of Cu 2 ZnSnSe 4 (CZTSe) and Cu 2 CdSnSe 4 (CCTSe) nanocrystals in an autoclave as a function of temperature and time were explored. On heating at 190 °C for 24-72 h, pure CZTSe and CCTSe nanocrystals could readily grow in the hydrazine-added solution, while in the hydrazine-free solution the intermediate phases such as ZnSe, Cu 2 Se, and Cu 2 SnSe 3 , and Cu 2 SnSe 3 and CdSe associated with the CZTSe and CCTSe nanocrystals grew, respectively. This result reveals that hydrazine can speed up the synthesis of pure CZTSe and CCTSe nanocrystals via a solvothermal process. The mechanisms for the hydrazine-enhanced growth of CZTSe and CCTSe nanocrystals were discussed. The pure CZTSe and CCTSe nanocrystals were subsequently fabricated to the smooth films by spin coating without further annealing in selenium atmosphere. This processing may be beneficial to the fabrication of the absorber layer for solar cells and thermoelectric devices. - Highlights: • Hydrazine enhances the growth of pure Cu 2 ZnSnSe 4 and Cu 2 CdSnSe 4 nanocrystals. • The nanocrystals can be fabricated to films by spin coating without annealing. • This solvothermal processing is promising for the fabrication of thin film devices

Direct Observation of High-Temperature Superconductivity in One-Unit-Cell FeSe Films

International Nuclear Information System (INIS)

Zhang Wen-Hao; Zhang Jin-Song; Li Fang-Sen; Guo Ming-Hua; Ding Hao; Tang Chen-Jia; Wang Qing-Yan; He Ke; Ji Shuai-Hua; Chen Xi; Sun Yi; Zhao Yan-Fei; Xing Ying; Wang Hui-Chao; Zhang Hui-Min; Peng Jun-Ping; Li Zhi; Wang Meng; Fujita Takeshi; Hirata Akihiko

2014-01-01

We prepared one-unit-cell (1-UC) thick FeSe films on insulating SrTiO 3 substrates with non-superconducting FeTe protection layers by molecular beam epitaxy for ex situ studies. By direct transport and magnetic measurements, we provide definitive evidence for high temperature superconductivity in the 1-UC FeSe films with an onset T C above 40 K and an extremely large critical current density J C ∼1.7×10 6 A/cm 2 at 2 K, which are much higher than T C ∼8 K and J C ∼10 4 A/cm 2 for bulk FeSe, respectively. Our work may pave the way to enhancing and tailoring superconductivity by interface engineering. (express letter)

Yb{sub 6}Ir{sub 5}Ga{sub 7} - a MgZn{sub 2} superstructure

Energy Technology Data Exchange (ETDEWEB)

Seidel, Stefan; Poettgen, Rainer [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster, Corrensstrasse 30, 48149, Muenster (Germany)

2017-02-15

The gallide Yb{sub 6}Ir{sub 5}Ga{sub 7} was synthesized by high-frequency melting of the elements in a sealed niobium ampoule. The structure was refined from single-crystal X-ray diffractometer data: Nb{sub 6.4}Ir{sub 4}Al{sub 7.6} type, P6{sub 3}/mcm, a = 930.4(1), c = 843.0(1) pm, wR{sub 2} = 0.0597, 379 F{sup 2} values and 22 variables. Yb{sub 6}Ir{sub 5}Ga{sub 7} adopts a superstructure of the MgZn{sub 2} Laves phase by a complete ordering of the iridium and gallium atoms on the zinc substructure, i.e. the network consists of ordered and condensed Ir{sub 3}Ga and IrGa{sub 3} tetrahedra with Ir-Ga distances ranging from 260 to 265 pm. The crystal chemical details and the underlying group-subgroup scheme are discussed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Growth and luminescent properties of Yb3+--doped oxide single crystals for scintillator application

International Nuclear Information System (INIS)

Yoshikawa, A.; Ogino, H.; Shim, J.B.; Nikl, M.; Solovieva, N.; Fukuda, T.

2004-01-01

Rod-shaped (Lu 1-x Yb x ) 3 Al 5 O 12 with x=0.05, 0.15, 0.30 and (Y 1-x Yb x )AlO 3 with x=0.05, 0.10, 0.30 single crystals were grown by the micro-pulling-down method. Edge-defined film-fed growth method was used to prepare (Y 0.9 Yb 0.1 )VO 4 crystal, while Ca 8 (La 1.98 Yb 0.02 )(PO 4 ) 6 O 2 crystal was grown by the Czochralski method. Luminescence of these crystals was studied with main attention paid to the charge transfer emission of Yb 3+ . Temperature tuned decay times in the time scale of units--tens of nanosecond was measured as a feature possibly interesting for an application in scintillation detectors in positron emission tomography

Yb and Er co-doped Y2Ce2O7 nanoparticles: synthesis and ...

Indian Academy of Sciences (India)

much attention due to their potential applications in display .... Figure 1. XRD patterns of Yb3+ and Er3+ co-doped Y2Ce2O7 nanoparticles prepared for 4 h at different sintering .... vels relax to the ground 4I15/2 level (You et al 2012). For.

Growth, characterization, and waveguide lasing of Yb3+, Lu3+, Gd3+ co-doped KY(WO4)2 thin layers

NARCIS (Netherlands)

Aravazhi, S.; Geskus, D.; Günther, D.; Worhoff, Kerstin; Pollnau, Markus

2009-01-01

Monoclinic crystals of KY(WO4)2 (KYW) doped with different rare-earth ions are among the highly promising materials for building compact solid-state lasers. We report the liquid phase epitaxy (LPE) growth of 3-5 µm thick KYW:Gd3+, Lu3+, Yb3+ layers for Yb3+ concentrations of 1.2, 1.7, and 2.4 mol%

Electrical and optical properties of spray - deposited CdSe thin films

International Nuclear Information System (INIS)

Bedir, M.; Oeztas, M.; Bakkaloglu, O. F.

2002-01-01

The CdSe thin films were developed by using spray-deposition technique at different substrate temperatures of 380C, 400C and, 420C on the glass substrate. All spraying processes involved CdCI 2 (0.05 moles/liter) and SeO 2 (0.05 moles/liter ) and were carried out in atmospheric condition. The CdSe thin film samples were characterized using x-ray diffractometer and optical absorption measurements. The electrical properties of the thin film samples were investigated via Wander Pauw method. XRD patterns indicated that the CdSe thin film samples have a hexagonal structure. The direct band gap of the CdSe thin film samples were determined from optical absorption and spectral response measurements of 1.76 eV. The resistivity of the CdSe thin film samples were found to vary in the range from 5.8x10''5 to 7.32x10''5 Ωcm depending to the substrate temperature

Optical spectroscopy of rare-earth ions doped KY(WO4)2 thin films

NARCIS (Netherlands)

García-Revilla, S.; Valiente, R.; Romanyuk, Y.E.; Utke, I.; Pollnau, Markus

KY(WO4)2 thin films doped with Dy3+, Tb3+, Yb3+, were grown onto KY(WO4)2 substrates using liquid-phase epitaxy. Spectroscopic investigations of the grown layers were performed. Obtained results were compared with spectra given for bulk crystals. Upconversion experiments after direct Yb3+ excitation

Instantaneous preparation of CuInSe2 films from elemental In, Cu, Se particles precursor films in a non-vacuum process

International Nuclear Information System (INIS)

Kaigawa, R.; Uesugi, T.; Yoshida, T.; Merdes, S.; Klenk, R.

2009-01-01

CuInSe 2 (CIS) films are successfully prepared by means of non-vacuum, instantaneous, direct synthesis from elemental In, Cu, Se particles precursor films without prior synthesis of CIS nanoparticle precursors and without selenization with H 2 Se or Se vapor. Our precursor films were prepared on metal substrates by spraying the solvent with added elemental In, Cu, and Se particles. Precursor films were instantaneously sintered using a spot welding machine. When the electric power was fixed to 0.6 kVA, elemental In, Cu, or Se peaks were not observed and only peaks of CIS are observed by X-ray diffraction (XRD) on the film sintered for 7/8 s. We can observe XRD peaks indicative of the chalcopyrite-type structure, such as (101), (103) and (211) diffraction peaks. We conclude that the synthesized CIS crystals have chalcopyrite-type structure with high crystallinity

Lattice dynamics and substrate-dependent transport properties of (In, Yb)-doped CoSb3 skutterudite thin films

KAUST Repository

Sarath Kumar, S. R.

2011-10-24

Lattice dynamics, low-temperature electrical transport, and high-temperature thermoelectric properties of (In, Yb)-doped CoSb3thin films on different substrates are reported. Pulsed laser deposition under optimized conditions yielded single-phase polycrystalline skutterudite films. Raman spectroscopy studies suggested that In and Yb dopants occupy the cage sites in the skutterudite lattice. Low-temperature electrical transport studies revealed the n-type semiconducting nature of the films with extrinsic and intrinsic conduction mechanisms, in sharp contrast to the degenerate nature reported for identical bulk samples. Calculations yielded a direct bandgap close to 50 meV with no evidence of an indirect gap. The carrier concentration of the films was identical to that reported for the bulk and increased with temperature beyond 250 K. The higher resistivity exhibited is attributed to the enhanced grain boundary scattering in films with a high concentration of grains. The maximum power factor of ∼0.68 W m−1 K−1 obtained at 660 K for the film on glass is found to be nearly four times smaller compared to that reported for the bulk. The observed difference in the power factors of the films on different substrates is explained on the basis of the diffusion of oxygen from the substrates and the formation of highly conducting CoSb2 phase upon the oxidation of CoSb3.

Thermodynamic and transport properties of YbNi 4Cd

Science.gov (United States)

Lee, J.; Park, H.; Lee-Hone, N. R.; Broun, D. M.; Mun, E.

2018-05-01

The single crystal growth and the physical properties of the intermetallic compounds R Ni4Cd (R =Y and Yb) which crystallize in the face-centered cubic (fcc) MgCu4Sn -type structure (space group F 4 ¯3 m ) are discussed. Thermodynamic and transport properties of YbNi4Cd are studied by measuring the magnetization, electrical resistivity, and specific heat. The magnetic susceptibility measurement shows that the 4 f electrons of Yb3 + ions are well localized. The electrical resistivity and specific heat exhibits an antiferromagnetic ordering below TN=0.97 K. Applying the field along the [111] direction results in the suppression of TN below 0.4 K at the critical field Hc˜4.5 kOe. No non-Fermi liquid behavior has been observed in the vicinity of Hc. Above Hc, the magnetoresistivity shows an unconventional temperature dependence ρ (T ) =ρ0+A Tn with n >2 , suggesting that an additional scattering mechanism in the resistivity needs to be considered. Based on the analysis of experimental results, we conclude that the Yb3 + moments and conduction electrons are weakly coupled. Despite the antiferromagnetic ordering below TN, YbNi4Cd exhibits a large frustration parameter | θp/TN|˜16 , where the magnetic Yb3 + ions occupy the tetrahedra on the fcc lattice.

Deposition and characterization of CuInSe2 thin films

International Nuclear Information System (INIS)

Dhere, N.G.; Ferreira, C.L.; Cruz, L.R.O.; Mattoso, I.G.; Alves, R.M.P.

1988-01-01

CuInSe 2 thin films with 1,3 to 1,7 μm of thickness were deposited by the constituent elements (copper, indium and selenium) in glass substrate. The producted films were characterized by scanning microscopy, X-ray diffraction, Auger electron spectroscopy, Hall effect measures and optical absorption. (C.G.C.) [pt

Physical characterization of Cu{sub 2}ZnGeSe{sub 4} thin films from annealing of Cu-Zn-Ge precursor layers

Energy Technology Data Exchange (ETDEWEB)

Buffière, M., E-mail: buffiere@imec.be [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium); ElAnzeery, H. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Microelectronics System Design department, Nile University, Cairo (Egypt); Oueslati, S.; Ben Messaoud, K. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Department of Physics, Faculty of Sciences of Tunis, El Manar (Tunisia); Brammertz, G.; Meuris, M. [Imec Division IMOMEC — Partner in Solliance, Diepenbeek (Belgium); Institute for Material Research (IMO) Hasselt University, Diepenbeek (Belgium); Poortmans, J. [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium)

2015-05-01

Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H{sub 2}Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 °C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV. - Highlights: • Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) thin films were deposited using a two-step process. • CZGeSe dense layers were obtained using a Mo/Cu/Zn/Ge precursor annealed at 460 °C. • Formation of ZnSe can be avoided by tuning the composition and order of the initial stack. • P-type CZGeSe absorber with an optical band gap of 1.5 eV was obtained.

AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

González, J.O. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450, México (Mexico); Shaji, S.; Avellaneda, D. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450, México (Mexico); Universidad Autónoma de Nuevo León-CIIDIT, Apodaca, Nuevo León, México (Mexico); Castillo, A.G.; Roy, T.K. Das [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, San Nicolás de los Garza, Nuevo León 66450, México (Mexico); and others

2013-05-15

Highlights: ► AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films were formed by heating Na{sub 2}SeSO{sub 3} dipped Sb{sub 2}S{sub 3}/Ag layers. ► S/Se ratio was varied by changing the dipping time in Na{sub 2}SeSO{sub 3} solution. ► Characterized the films using XRD, XPS, SEM, Optical and electrical measurements. ► Band gap engineering of 1−1.1 eV for x = 0.51 and 0.52 respectively. ► PV Glass/FTO/CdS/AgSb(S{sub x}Se{sub 1−x}){sub 2}/C were prepared showing V{sub oc} = 410 mV, J{sub sc} = 5.7 mA/cm{sup 2}. - Abstract: Silver antimony sulfoselenide (AgSb(S{sub x}Se{sub 1−x}){sub 2}) thin films were prepared by heating glass/Sb{sub 2}S{sub 3}/Ag layers after selenization using sodium selenosulphate solution. First, Sb{sub 2}S{sub 3} thin films were deposited on glass substrates from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}. Then Ag thin films were thermally evaporated onto glass/Sb{sub 2}S{sub 3}, followed by selenization by dipping in an acidic solution of Na{sub 2}SeSO{sub 3}. The duration of selenium dipping was varied as 30 min and 2 h. The heating condition was at 350 °C for 1 h in vacuum. Analysis of X-ray diffraction pattern of the thin films formed after heating showed the formation of AgSb(S{sub x}Se{sub 1−x}){sub 2}. Morphology and elemental analysis were done by scanning electron microscopy and energy dispersive X-ray detection. Depth profile of composition of the thin films was performed by X-ray Photoelectron Spectroscopy. The spectral study showed the presence of Ag, Sb, S, and Se, and the corresponding binding energy analysis confirmed the formation of AgSb(S{sub x}Se{sub 1−x}){sub 2}. Photovoltaic structures (PV) were prepared using AgSb(S{sub x}Se{sub 1−x}){sub 2} thin films as absorber and CdS thin films as window layers on FTO coated glass substrates. The PV structures were heated at 60–80 °C in air for 1 h to improve ohmic contact. Analysis of J–V characteristics of the PV structures showed V

Study of optical properties of vacuum evaporated carbon nanotube containing Se80Te16Cu4 thin films

Science.gov (United States)

Upadhyay, A. N.; Tiwari, R. S.; Singh, Kedar

2016-08-01

Thin films of Se80Te16Cu4 glassy alloy and 3 wt.% of carbon nanotubes (CNTs) containing Se80Te16Cu4 glassy composite were deposited on clean glass substrate by thermal evaporation technique. The scanning electron microscope and energy dispersive x-ray analysis were performed to investigate the surface morphology and elemental composition of as synthesised samples. The reflectance and transmittance spectra of as-deposited thin films were recorded (200-1100 nm) by using UV/VIS/NIR spectrophotometer. The optical band gap and optical constants such as absorption coefficient (α), refractive index (n) and extinction coefficient (k) of Se80Te16Cu4 and 3 wt.% CNTs-Se80Te16Cu4 glassy composite thin films were calculated. It is observed that optical properties alter due to CNTs incorporation in Se80Te16Cu4 glassy alloy. Effect on optical properties due to CNTs incorporation can be explained in terms of concentration of unsaturated bonds/defects in the localised states.

Selective regulation of YB-1 mRNA translation by the mTOR signaling pathway is not mediated by 4E-binding protein.

Science.gov (United States)

Lyabin, D N; Ovchinnikov, L P

2016-03-02

The Y-box binding protein 1 (YB-1) is a key regulator of gene expression at the level of both translation and transcription. The mode of its action on cellular events depends on its subcellular distribution and the amount in the cell. So far, the regulatory mechanisms of YB-1 synthesis have not been adequately studied. Our previous finding was that selective inhibition of YB-1 mRNA translation was caused by suppression of activity of the mTOR signaling pathway. It was suggested that this event may be mediated by phosphorylation of the 4E-binding protein (4E-BP). Here, we report that 4E-BP alone can only slightly inhibit YB-1 synthesis both in the cell and in vitro, although it essentially decreases binding of the 4F-group translation initiation factors to mRNA. With inhibited mTOR kinase, the level of mRNA binding to the eIF4F-group factors was decreased, while that to 4E-BP1 was increased, as was observed for both mTOR kinase-sensitive mRNAs and those showing low sensitivity. This suggests that selective inhibition of translation of YB-1 mRNA, and probably some other mRNAs as well, by mTOR kinase inhibitors is not mediated by the action of the 4E-binding protein upon functions of the 4F-group translation initiation factors.

JNK1/2 Activation by an Extract from the Roots of Morus alba L. Reduces the Viability of Multidrug-Resistant MCF-7/Dox Cells by Inhibiting YB-1-Dependent MDR1 Expression

Directory of Open Access Journals (Sweden)

Youn Kyung Choi

2013-01-01

Full Text Available Cancer cells acquire anticancer drug resistance during chemotherapy, which aggravates cancer disease. MDR1 encoded from multidrug resistance gene 1 mainly causes multidrug resistance phenotypes of different cancer cells. In this study, we demonstrate that JNK1/2 activation by an extract from the root of Morus alba L. (White mulberry reduces doxorubicin-resistant MCF-7/Dox cell viability by inhibiting YB-1 regulation of MDR1 gene expression. When MCF-7 or MCF-7/Dox cells, where MDR1 is highly expressed were treated with an extract from roots or leaves of Morus alba L., respectively, the root extract from the mulberry (REM but not the leaf extract (LEM reduced cell viabilities of both MCF-7 and MCF-7/Dox cells, which was enhanced by cotreatment with doxorubicin. REM but not LEM further inhibited YB-1 nuclear translocation and its regulation of MDR1 gene expression. Moreover, REM promoted phosphorylation of c-Jun NH2-terminal kinase 1/2 (JNK1/2 and JNK1/2 inhibitor, SP600125 and rescued REM inhibition of both MDR1 expression and viabilities in MCF-7/Dox cells. Consistently, overexpression of JNK1, c-Jun, or c-Fos inhibited YB-1-dependent MDR1 expression and reduced viabilities in MCF-7/Dox cells. In conclusion, our data indicate that REM-activated JNK-cJun/c-Fos pathway decreases the viability of MCF-7/Dox cells by inhibiting YB-1-dependent MDR1 gene expression. Thus, we suggest that REM may be useful for treating multidrug-resistant cancer cells.

Growth and continuous-wave laser operation of disordered crystals of Yb3+:NaLa(WO4)2 and Yb3+:NaLa(MoO4)2

Science.gov (United States)

Liu, J.; Cano-Torres, J. M.; Cascales, C.; Esteban-Betegón, F.; Serrano, M. D.; Volkov, V.; Zaldo, C.; Rico, M.; Griebner, U.; Petrov, V.

2005-03-01

Single crystals of disordered NaLa(WO4)2 and NaLa(MoO4)2 doped with Yb3+ are grown by the Czochralski method from the melt. Continuous-wave laser operation with Ti:sapphire laser pumping is demonstrated at room temperature without special cooling. Tunability from 1017 to 1057 nm and from 1015 to 1053 nm is achieved for Yb:NaLa(WO4)2 and Yb:NaLa(MoO4)2, respectively. A maximum output power of 205 mW is obtained with Yb:NaLa(WO4)2.

In-situ XRD study of alloyed Cu2ZnSnSe4-CuInSe2 thin films for solar cells

International Nuclear Information System (INIS)

Hartnauer, Stefan; Wägele, Leonard A.; Jarzembowski, Enrico; Scheer, Roland

2015-01-01

We investigate the growth of Cu 2 ZnSnSe 4 -CuInSe 2 (CZTISe) thin films using a 2-stage (Cu-rich/Cu-free) co-evaporation process under simultaneous application of in-situ angle dispersive X-ray diffraction (XRD). In-situ XRD allows monitoring the phase formation during preparation. A variation of the content of indium in CZTISe leads to a change in the lattice constant. Single phase CZTISe is formed in a wide range, while at high In contents a phase separation is detected. Because of different thermal expansion coefficients, the X-ray diffraction peaks of ZnSe and CZTISe can be distinguished at elevated substrate temperatures. The formation of ZnSe appears to be inhibited even for low indium content. In-situ XRD shows no detectable sign for the formation of ZnSe. First solar cells of CZTISe have been prepared and show comparable performance to CZTSe. - Highlights: • In-situ XRD study of two-stage co-evaporated Cu 2 ZnSnSe 4 -CuInSe 2 alloyed thin films. • No detection of ZnSe with in-situ XRD due to Indium incorporation • Comparable efficiency of alloyed solar cells

Magnetic and magneto-optical characteristics of spin coated Co{sub 0.6}Zn{sub 0.4}Fe{sub 1.7}Mn{sub 0.3}O{sub 4} thin films on Pt (1 1 1) coated Si substrate

Energy Technology Data Exchange (ETDEWEB)

Gupta, Arti, E-mail: artigupta80@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi110007 (India); Dutta, Shankar [Solid State Physics Laboratory, DRDO, Lucknow Road, Timarpur, Delhi110054 (India); Tandon, Ram Pal [Department of Physics and Astrophysics, University of Delhi, Delhi110007 (India)

2016-05-15

Highlights: • Properties of Co{sub 0.6}Zn{sub 0.4}Mn{sub 0.3}Fe{sub 1.7}O{sub 4} thin films on Pt-Si substrate are reported. • Reduction in thickness ∼27% with increased annealing temperature was found. • Partial (3 3 3) plane textured orientation was noted for these films. - Abstract: This paper reports magnetic and magneto-optical properties of Co{sub 0.6}Zn{sub 0.4}Fe{sub 1.7}Mn{sub 0.3}O{sub 4} nanocrystalline thin films (thickness ∼140–200 nm) deposited on Pt (1 1 1)/Ti/SiO{sub 2}/Si substrates by spin coating technique. Deposited films are then annealed at 600 °C and 700 °C for 60 min (significant reduction in film thickness from 200 nm to 140 nm was noted with the increase in post deposition annealing temperature). The X ray diffraction patterns confirmed the spinel cubic structure of Co{sub 0.6}Zn{sub 0.4}Fe{sub 1.7}Mn{sub 0.3}O{sub 4} films with polycrystalline phase and also indicated a partial <3 3 3> texture orientation. Deposited films showed magnetic anisotropy as evidenced from magnetic and magneto-optical measurements. Higher in plane remnant magnetization and low coercivity values as compared to out of plane ones were observed for both samples, indicating in plane alignment of easy axis of magnetization.

Electrodeposition and characterization of CdSe x-Te 1- x semiconducting thin films

Science.gov (United States)

Benamar, E.; Rami, M.; Fahoume, M.; Chraibi, F.; Ennaoui, A.

1999-07-01

Thin polycrystalline films of cadmium chalcogenides CdSe xTe 1-x ( 0 ≤ x ≤ 1) have been prepared by electrochemical plating on ITO (indium tin oxide) coated glass substrates from an acid sulfate solution at 90 °C. Structural, morphological and compositional studies of the deposited films are reported as a function of the x coefficient. XRD analysis shows that all deposits have a cubic structure with a preferred orientation along the (111) direction. The composition in the films is found to vary linearly with the composition in the solution. The increase in the selenium content x in the CdSe xTe 1-x films decreases the lattice constant and increases the band gap. Nevertheless this latter presents a minimum for x = 0.27.

Structural, optical and electrical properties of Cu{sub 2}FeSnX{sub 4} (X = S, Se) thin films prepared by chemical spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Khadka, Dhruba B.; Kim, JunHo, E-mail: jhk@inu.ac.kr

2015-07-25

Highlights: • CFTS(Se) thin films have been synthesized by low-cost spray-based deposition. • The fabricated films were found to be of stannite structure and p-type conductivity. • Band gaps of CFTS and CFTSe thin films are 1.37 and 1.11 eV, respectively. - Abstract: We report on fabrication of polycrystalline Cu{sub 2}FeSnX{sub 4} (X = S, Se) thin films by chemical spray pyrolysis subsequent with post-sulfurization and selenization. The post-annealing of as-sprayed Cu{sub 2}FeSnS{sub 4} (CFTS) films in sulfur and selenium ambient demonstrated drastically improved surface texture as well as crystallinity. The crystal lattice parameters calculated from X-ray diffraction patterns for post-annealed films were found to be consistent with stannite structure. The fabricated Cu{sub 2}FeSnS{sub 4} (CFTS) and Cu{sub 2}FeSnSe{sub 4} (CFTSe) films showed p-type conductivity with carrier concentration in the range of 10{sup 21} cm{sup −3} and mobility ∼1–5 cm{sup 2} V{sup −1} s{sup −1}. The band gap energies of post-sulfurized CFTS and post-selenized CFTSe films were estimated to be ∼1.37 eV and ∼1.11 eV with an error of ±0.02 eV by UV–Vis absorption, respectively, which are promising for photovoltaic application.

Electrodeposition and Thermoelectric Properties of Cu-Se Binary Compound Films

Science.gov (United States)

Yang, Mengqian; Shen, Zhengwu; Liu, Xiaoqing; Wang, Wei

2016-03-01

Cu-Se binary compound films have been prepared by electrodeposition from solutions containing CuSO4, H2SeO3, and H2SO4 and their composition, structure, and thermoelectric performance analyzed. Moving the depositing potential negatively increased the Cu content in the film, remarkably so for relatively low Cu2+ concentration in the solution. X-ray diffraction analysis showed that the phase composition of the films varied with their Cu content. Cu-Se binary compound films electrodeposited from solutions with different concentration ratios of CuSO4 to H2SeO3 showed two different phases: α-Cu2- x Se (monoclinic) with Se content in the range of 33.3 at.% to 33.8 at.%, and β-Cu2Se (cubic) with Se content in the range of 35.3 at.% to 36.0 at.%. The highest power factor for electrodeposited Cu2- x Se film was 0.13 mW/(K2 m) with Seebeck coefficient of 56.0 μV/K.

A novel magneto-optical crystal Yb:TbVO4

Science.gov (United States)

Zhu, Xianchao; Tu, Heng; Hu, Zhanggui

2018-04-01

Highly transparent Yb:TbVO4 single crystal with dimensions of Ø27 × 41 mm3 alomost without scattering defects has been successfully grown by Czochralski technique. The spectra, thermal properties and laser-induced damage threshold were investigated in detailed. The Faraday rotation (FR) measurement was carried out by means of extinction method. The Verdet constant comes up to 80 rad m-1 T-1 at 1064 nm, significantly larger than TbVO4 (58 rad m-1 T-1) and TGG (40 rad m-1 T-1) reported. Meanwhile, the as-grown crystal presents lower absorption coefficient and higher magneto-optical figure of merit at measured wavelength in comparison with TGG. Moreover, the crystal exhibits a substantially improved extinction ratio (42 dB) in contrast with TbVO4 (29 dB), and exceeds the highest value of TGG (40 dB). These advantages make Yb:TbVO4 a highly promising magneto-optical material candidate for optical isolators in the visible-near infrared region.

High-Pressure Synthesis and Characterization of the Ammonium Yttrium Borate (NH4)YB8O14.

Science.gov (United States)

Schmitt, Martin K; Podewitz, Maren; Liedl, Klaus R; Huppertz, Hubert

2017-11-20

The first high-pressure yttrium borate (NH 4 )YB 8 O 14 was synthesized at 12.8 GPa/1300 °C using a Walker-type multianvil module. The compound crystallizes in the orthorhombic space group Pnma (no. 62) with the lattice parameters a = 17.6375(9), b = 10.7160(5), and c = 4.2191(2) Å. (NH 4 )YB 8 O 14 constitutes a novel structure type but exhibits similarities to the crystal structure of β-BaB 4 O 7 . X-ray single-crystal and powder diffraction, EDX, vibrational spectroscopy as well as quantum chemical calculations were used to characterize (NH 4 )YB 8 O 14 .

Growth and continuous-wave laser operation of disordered crystals of Yb3+:NaLa(WO4)2 and Yb3+:NaLa(MoO4)2

International Nuclear Information System (INIS)

Liu, J.; Rico, M.; Griebner, U.; Petrov, V.; Cano-Torres, J.M.; Cascales, C.; Esteban-Betegon, F.; Serrano, M.D.; Volkov, V.; Zaldo, C.

2005-01-01

Single crystals of disordered NaLa(WO 4 ) 2 and NaLa(MoO 4 ) 2 doped with Yb 3+ are grown by the Czochralski method from the melt. Continuous-wave laser operation with Ti:sapphire laser pumping is demonstrated at room temperature without special cooling. Tunability from 1017 to 1057 nm and from 1015 to 1053 nm is achieved for Yb:NaLa(WO 4 ) 2 and Yb:NaLa(MoO 4 ) 2 , respectively. A maximum output power of 205 mW is obtained with Yb:NaLa(WO 4 ) 2 . (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Zinc concentration effect on structural, optical and electrical properties of Cd{sub 1−x}Zn{sub x}Se thin films

Energy Technology Data Exchange (ETDEWEB)

Akaltun, Yunus [Department of Electrical and Electronic, Engineering Faculty, Erzincan University, Erzincan (Turkey); Yıldırım, M. Ali, E-mail: mayildirim@erzincan.edu.tr [Department of Physics, Science and Art Faculty, Erzincan University, Erzincan (Turkey); Ateş, Aytunç [Department of Material Engineering, Engineering and Natural Sciences Faculty, Yıldırım Beyazıt University, Ankara (Turkey); Yıldırım, Muhammet [Department of Physics, Science Faculty, Atatürk University, Erzurum (Turkey)

2012-11-15

Highlights: ► Cd{sub 1−x}Zn{sub x}Se thin films were deposited using SILAR method. ► The electron effective mass, refractive index, dielectric constant values were calculated by using the energy bandgap values as a function of the zinc concentration (x). ► The resistivity and activation energy changed as a function of the zinc concentration (x). -- Abstract: Cd{sub 1−x}Zn{sub x}Se thin films with different compositions (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) were deposited on glass substrates using successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. The zinc concentration (x) effect on the structural, morphological, optical and electrical properties of Cd{sub 1−x}Zn{sub x}Se thin films were investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibited polycrystalline nature and were covered well on glass substrates. The energy dispersive X-ray (EDAX) analysis confirmed nearly stoichiometric deposition of the films. The energy bandgap values were changed from 1.99 to 2.82 eV depending on the zinc concentration. Bowing parameter was calculated as 0.08 eV. The electron effective mass (m{sub e}*/m{sub o}), refractive index (n), optical static and high frequency dielectric constants (ε{sub o}, ε{sub ∞}) values were calculated by using the energy bandgap values as a function of the zinc concentration. The resistivity values of the films changed between 10{sup 5} and 10{sup 7} Ω cm with increasing zinc concentration at room temperature.

Influence of O{sub 2} exposure on the interaction between CH{sub 4} and amorphous AlYB{sub 14}

Energy Technology Data Exchange (ETDEWEB)

Hunold, Oliver, E-mail: hunold@mch.rwth-aachen.de [Materials Chemistry, RWTH Aachen University, Kopernikusstr, 10, D-52074 Aachen (Germany); Wiesing, Martin; Arcos, Teresa de los [Technical and Macromolecular Chemistry, University of Paderborn, Warburger Str. 100, D-33098 Paderborn (Germany); Music, Denis [Materials Chemistry, RWTH Aachen University, Kopernikusstr, 10, D-52074 Aachen (Germany); Grundmeier, Guido [Technical and Macromolecular Chemistry, University of Paderborn, Warburger Str. 100, D-33098 Paderborn (Germany); Schneider, Jochen M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr, 10, D-52074 Aachen (Germany)

2017-01-15

Highlights: • Influence of O{sub 2} exposure on the surface chemistry of a-AlYB{sub 14} on the interaction with CH{sub 4} and PE studied by ab initio and UHV-AFM. • Predicted stronger interaction is consistent with experimentally observed trends. • Upon O{sub 2} exposure surface bonding becomes more semiconducting causing a charge redistribution within the adsorbed CH{sub 4} molecule. • The data serve as proof of concept for exploring polymer − hard coating interactions in varying atmospheres. - Abstract: The influence of surface oxidation on the interaction between CH{sub 4} and amorphous AlYB{sub 14} (a-AlYB{sub 14}) has been studied theoretically by using density functional theory and experimentally by ultra-high vacuum atomic force microscopy (UHV-AFM). CH{sub 4} mimics the –CH{sub 3} termination and aliphatic subunits of a polymer chain. Low-energy ion scattering measurements of magnetron sputtered thin films suggest that the bonding at the surfaces of pristine a-AlYB{sub 14} and O{sub 2} exposed a-AlYB{sub 14} (O{sub 2}//a-AlYB{sub 14}) is metal-boron and metal-oxygen dominated, respectively. Based on the ab initio calculations the adsorption energies of CH{sub 4} on a-AlYB{sub 14} and O{sub 2}//a-AlYB{sub 14} decreases from −0.07 to −0.30 eV, respectively. This trend is consistent with experimental data obtained by colloidal probe UHV-AFM studies with a polyethylene sphere, where larger adhesion forces for the O{sub 2} exposed surface as compared to the pristine a-AlYB{sub 14} surface were measured. No charge transfer takes place between CH{sub 4} and the pristine as well as the O{sub 2} exposed a-AlYB{sub 14}. Oxygen chemisorption induces changes in surface bonding. States at the Fermi level are depleted upon oxidation, hence the surface bonding becomes more semiconducting causing a charge redistribution within the adsorbed CH{sub 4} molecule. Hence, these data serve as proof of concept for exploring the effect of O{sub 2} exposure on the

Sol-Gel Derived Active Material for Yb Thin-Disk Lasers.

Science.gov (United States)

Almeida, Rui M; Ribeiro, Tiago; Santos, Luís F

2017-09-02

A ytterbium doped active material for thin-disk laser was developed based on aluminosilicate and phosphosilicate glass matrices containing up to 30 mol% YbO 1.5 . Thick films and bulk samples were prepared by sol-gel processing. The structural nature of the base material was assessed by X-ray diffraction and Raman spectroscopy and the film morphology was evidenced by scanning electron microscopy. The photoluminescence (PL) properties of different compositions, including emission spectra and lifetimes, were also studied. Er 3+ was used as an internal reference to compare the intensities of the Yb 3+ PL peaks at ~ 1020 nm. The Yb 3+ PL lifetimes were found to vary between 1.0 and 0.5 ms when the Yb concentration increased from 3 to 30 mol%. Based on a figure of merit, the best active material selected was the aluminosilicate glass composition 71 SiO₂-14 AlO 1.5 -15 YbO 1.5 (in mol%). An active disk, ~ 36 μm thick, consisting of a Bragg mirror, an aluminosilicate layer doped with 15 mol% Yb and an anti-reflective coating, was fabricated.

ThSi_2 type ytterbium disilicide and its analogues YbT_xSi_2_-_x (T = Cr, Fe, Co)

International Nuclear Information System (INIS)

Peter, Sebastian C.; Kanatzidis, Mercouri G.

2012-01-01

YbSi_2 and the derivatives YbT_xSi_2_-_x (T = Cr, Fe, Co) crystallizing in the α-ThSi_2 structure type were obtained as single crystals from reactions run in liquid indium. All silicides were investigated by single-crystal X-ray diffraction, I4_1/amd space group and the lattice constants are: a = 3.9868(6) Aa and c = 13.541(3) Aa for YbSi_2, a = 4.0123(6) Aa and c = 13.542(3) Aa for YbCr_0_._2_7Si_1_._7_3, a = 4.0142(6) Aa and c = 13.830(3) Aa for YbCr_0_._7_1Si_1_._2_9, a = 4.0080(6) Aa and c = 13.751(3) Aa for YbFe_0_._3_4Si_1_._6_6, and a = 4.0036(6) Aa, c = 13.707(3) Aa for YbCo_0_._2_1Si_1_._7_9. YbSi_2 and YbT_xSi_2_-_x compounds are polar intermetallics with three-dimensional Si and M (T+Si) polyanion sub-networks, respectively, filled with ytterbium atoms. The degree of substitution of transition metal at the silicon site is signficant and leads to changes in the average bond lengths and bond angles substantially. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Enhancing upconversion emission of Er, Yb co-doped highly transparent YF3 films by synergistic tuning nano-textured morphology and crystallinity

International Nuclear Information System (INIS)

Qu, Ming-Hao; Wang, Ru-Zhi; Chen, Yan; Zhang, Ying; Li, Kai-Yu; Zhou, Hua; Yan, Hui

2014-01-01

Highly transparent Er, Yb codoped YF 3 upconversion films were successfully prepared by electron beam deposition method. The effects of the substrate temperature on the morphology, crystallinity and emission characteristics of Er, Yb codoped YF 3 films were studied carefully. It was found that the morphology and crystallinity varied from smooth amorphous to root-intertwined polycrystalline structure with the substrate temperature increase. Besides, the emission characteristics of the films can be modulated by the synergy of their surface morphologies and crystallinities. Remarkably, a large enhancement of the upconversion emission, up to five decades while only an insignificant decrease of the optical transmittance (10% at most), was achieved by forming root-intertwined polycrystalline structures. These highly transparent upconversion films may have good potential for enhancing the conversion efficiency of wide band-gap solar cells. -- Highlights: • Er, Yb co-dopedYF 3 upconversion films have been successfully prepared. • The upconversion property can be modulated by morphology and crystallinity. • The upconversion transparent YF 3 films are promising for solar cells applications

Fabrication of NaYF4:Yb,Er Nanoprobes for Cell Imaging Directly by Using the Method of Hydrion Rivalry Aided by Ultrasonic.

Science.gov (United States)

Li, Zhihua; Miao, Haixia; Fu, Ying; Liu, Yuxiang; Zhang, Ran; Tang, Bo

2016-12-01

A novel method of fabricating water-soluble bio-probes with ultra-small size such as NaYF 4 :Yb,Er (18 nm), NaGdF 4 :Yb,Er (8 nm), CaF 2 :Yb,Er (10 nm), PbS (7 nm), and ZnS (12 nm) has been developed to provide for the solubility switch of nanoparticles from oil-soluble to water-soluble in terms of hydrion rivalry aided by ultrasonic. Using NaYF 4 :Yb,Er (18 nm) as an example, we evaluate the properties of as-prepared water-soluble nanoparticles (NPs) by using thermogravimetric analyses (TGA), Fourier transform infrared spectroscopy (FTIR), zeta potential (ζ) testing, and 1H nuclear magnetic resonance ( 1 HNMR). The measured ζ value shows that the newly prepared hydrophilic NaYF 4 :Yb,Er NPs are the positively charged particles. Acting as reactive electrophilic moiety, the freshly prepared hydrophilic NaYF 4 :Yb,Er NPs have carried out the coupling with amino acids and fluorescence labeling and imaging of HeLa cells directly. Experiments indicate that the method of hydrion rivalry aided by ultrasonic provides a simple and novel opportunity to transform hydrophobic NPs into hydrophilic NPs with good reactivity, which can be imaging some specific biological targets directly.

Deposition of Li{sub 4}Ti{sub 5}O{sub 12} and LiMn{sub 2}O{sub 4} films on the lithium-ion conductor of Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} sintered pellet

Energy Technology Data Exchange (ETDEWEB)

Wu, Xian Ming, E-mail: xianmingwu@163.com [College of Chemistry and Chemical Engineering, Jishou University, Jishou Hunan 416000 (China); Xiangxi Minerals and New Materials Research and Service Center, Jishou Hunan 416000 (China); Chen, Shang [College of Chemistry and Chemical Engineering, Jishou University, Jishou Hunan 416000 (China); Xiangxi Minerals and New Materials Research and Service Center, Jishou Hunan 416000 (China); He, Ze Qiang; Chen, Shou Bin; Li, Run Xiu [College of Chemistry and Chemical Engineering, Jishou University, Jishou Hunan 416000 (China)

2015-08-31

LiMn{sub 2}O{sub 4} and Li{sub 4}Ti{sub 5}O{sub 12} films were deposited on the lithium-ion conductor of Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} sintered pellet by spray technique. The effect of annealing temperature, annealing time, Li:Ti and Li:Mn molar ratio on the phase and crystallization of the films were investigated with X-ray diffraction. The LiMn{sub 2}O{sub 4}/Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3}/Li{sub 4}Ti{sub 5}O{sub 12} thin-film lithium-ion battery using Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} sintered pellet as both electrolyte and substrate was also studied. The results show that the effect of annealing temperature, annealing time, Li:Ti and Li:Mn molar ratio has great effect on the phase and crystallization of Li{sub 4}Ti{sub 5}O{sub 12} and LiMn{sub 2}O{sub 4} films deposited on the Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} sintered pellet. The optimal Li:Ti and Li:Mn molar ratio for the deposition of Li{sub 4}Ti{sub 5}O{sub 12} and LiMn{sub 2}O{sub 4} films on Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} sintered pellet are 7.2:5 and 1.05:2, respectively. The optimal annealing temperature and time for the deposition of LiMn{sub 2}O{sub 4} film on Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} sintered pellet are 650 °C and 10 min. While those for Li{sub 4}Ti{sub 5}O{sub 12} film are 700 °C and 10 min. The LiMn{sub 2}O{sub 4}/Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3}/Li{sub 4}Ti{sub 5}O{sub 12} thin-film battery offers a working voltage about 2.25 V and can be easily cycled. - Highlights: • LiMn{sub 2}O{sub 4} and Li{sub 4}Ti{sub 5}O{sub 12} films spray deposited on Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} sintered pellet • Film crystal phase depends on the spray solution composition and annealing conditions. • Prepared thin-film lithium-ion battery employs sintered pellet as electrolyte and substrate. • LiMn{sub 2}O{sub 4}/Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7

Effects of hydrazine on the solvothermal synthesis of Cu{sub 2}ZnSnSe{sub 4} and Cu{sub 2}CdSnSe{sub 4} nanocrystals for particle-based deposition of films

Energy Technology Data Exchange (ETDEWEB)

Chiang, Ming-Hung [Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701 (China); Fu, Yaw-Shyan, E-mail: ysfu@mail.nutn.edu.tw [Department of Greenergy, National University of Tainan, Tainan, Taiwan 700 (China); Shih, Cheng-Hung; Kuo, Chun-Cheng [Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701 (China); Guo, Tzung-Fang [Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan 701 (China); Lin, Wen-Tai, E-mail: wtlin@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701 (China)

2013-10-01

The effects of hydrazine on the synthesis of Cu{sub 2}ZnSnSe{sub 4} (CZTSe) and Cu{sub 2}CdSnSe{sub 4} (CCTSe) nanocrystals in an autoclave as a function of temperature and time were explored. On heating at 190 °C for 24-72 h, pure CZTSe and CCTSe nanocrystals could readily grow in the hydrazine-added solution, while in the hydrazine-free solution the intermediate phases such as ZnSe, Cu{sub 2}Se, and Cu{sub 2}SnSe{sub 3}, and Cu{sub 2}SnSe{sub 3} and CdSe associated with the CZTSe and CCTSe nanocrystals grew, respectively. This result reveals that hydrazine can speed up the synthesis of pure CZTSe and CCTSe nanocrystals via a solvothermal process. The mechanisms for the hydrazine-enhanced growth of CZTSe and CCTSe nanocrystals were discussed. The pure CZTSe and CCTSe nanocrystals were subsequently fabricated to the smooth films by spin coating without further annealing in selenium atmosphere. This processing may be beneficial to the fabrication of the absorber layer for solar cells and thermoelectric devices. - Highlights: • Hydrazine enhances the growth of pure Cu{sub 2}ZnSnSe{sub 4} and Cu{sub 2}CdSnSe{sub 4} nanocrystals. • The nanocrystals can be fabricated to films by spin coating without annealing. • This solvothermal processing is promising for the fabrication of thin film devices.

Q-switched Yb3+:YAG laser using plasmonic Cu2-xSe quantum dots as saturable absorbers

Science.gov (United States)

Wang, Yimeng; Zhan, Yi; Lee, Sooho; Wang, Li; Zhang, Xinping

2018-04-01

Cu2-xSe quantum dots (QDs) were synthesized by organometallic synthesis methods. Due to heavy self-doping, the Cu2-xSe QDs exhibit particle plasmon resonance in the near-infrared. Transient absorption spectroscopic investigation revealed strong nonlinear optical absorption and bleaching performance of the QDs under femtosecond pulse excitation, which enabled the Cu2-xSe QDs to be excellent saturable absorbers and applied in Q-switched or mode-locked lasers. A passively Q-switched Yb3+:YAG solid-state laser at 1.03 μm was achieved by coating Cu2-xSe QDs as saturable absorbers onto one of the output coupler of the V-shaped linear cavity.

Absolute El Transition Probabilities in the Deformed Nuclei {sup 177}Yb and {sup 1}

Energy Technology Data Exchange (ETDEWEB)

Malmskog, Sven G

1964-08-15

The absolute E1-transition probabilities have been measured for two 7/2{sup -} (514) levels populated from the short-lived isomers {sup 177m}Yb (6.4 sec) and {sup 179m}Hf (18.6 sec), a delayed coincidence set up being used for the purpose. This gave a half life of T{sub 1/2} = (4.48 {+-} 0.08)x10{sup -9} sec for the 104 keV level in {sup 177}Yb and T{sub 1/2} = (1.86 {+-} 0.05)x10{sup -9} sec for the 217 keV level in {sup 179}Hf. The result has been compared with the calculations made by Nilsson. The effect of the pairing correlation has also been taken into account. An agreement with the experimental values to within a factor of three is obtained. An extrapolated estimate of the half life for the 408.9 keV 7/2{sup -} (514) level in {sup 181}W gives 3x10{sup -11} sec.

Nanocrystalline Cu{sub 2}ZnSnSe{sub 4} thin films for solar cells application: Microdiffraction and structural characterization

Energy Technology Data Exchange (ETDEWEB)

Quiroz, Heiddy P., E-mail: hpquirozg@unal.edu.co; Dussan, A., E-mail: adussanc@unal.edu.co [Departmento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Universidad Nacional de Colombia, Bogotá 11001 (Colombia)

2016-08-07

This work presents a study of the structural characterization of Cu{sub 2}ZnSnSe{sub 4} (CZTSe) thin films by X-ray diffraction (XRD) and microdiffraction measurements. Samples were deposited varying both mass (M{sub X}) and substrate temperature (T{sub S}) at which the Cu and ZnSe composites were evaporated. CZTSe samples were deposited by co-evaporation method in three stages. From XRD measurements, it was possible to establish, with increased Ts, the presence of binary phases associated with the quaternary composite during the material's growth process. A stannite-type structure in Cu{sub 2}ZnSnSe{sub 4} thin films and sizes of the crystallites varying between 30 and 40 nm were obtained. X-ray microdiffraction was used to investigate interface orientations and strain distributions when deposition parameters were varied. It was found that around the main peak, 2ϴ = 27.1°, the Cu{sub 1.8}Se and ZnSe binary phases predominate, which are formed during the subsequent material selenization stage. A Raman spectroscopy study revealed Raman shifts associated with the binary composites observed via XRD.

Electrical conduction studies of hot wall deposited CdSe{sub x}Te{sub 1-x} thin films

Energy Technology Data Exchange (ETDEWEB)

Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology, Coimbatore 641014 (India); Balasundaraprabhu, R.; Jayakumar, S.; Kannan, M.D. [Department of Physics, PSG College of Technology, Coimbatore (India)

2008-08-15

CdSe{sub x}Te{sub 1-x} thin films of different compositions have been deposited on cleaned glass substrates using the hot wall deposition technique under conditions very close to thermodynamical equilibrium with minimum loss of material. The electrical conductivity of the deposited films has been studied as a function of temperature. All the films showed a transition from phonon-assisted hopping conduction through the impurity band to grain-boundary-limited conduction in the conduction/valence band at temperature around 325 K. The conductivity has been found to vary with composition; it varied from 0.0027 to 0.0198 {omega}{sup -1} cm{sup -1} when x changed from 0 to 1. The activation energies of the films of different compositions determined at 225 and 400 K have been observed to lie in the range 0.0031-0.0098 and 0.0285-0.0750 eV, respectively. The Hall-effect studies carried out on the deposited films revealed that the nature of conductivity (p or n-type) was dependent on film composition; films with composition x=0 and 0.15 have been found to be p-type and the ones with composition x=0.4, 0.6, 0.7, 0.85 and 1 have been observed to exhibit n-type conductivity. The carrier concentration has been determined and is of the order of 10{sup 17} cm{sup -3}. The majority of carrier mobilities of the films have been observed to vary from 0.032 to 0.183 cm{sup 2} V{sup -1} s{sup -1} depending on film composition. The study of the mobility of the charge carriers with temperature in the range of 300-450 K showed that the mobility increased with 3/2 power of temperature indicating that the type of scattering mechanism in the studied temperature range is the ionized impurity scattering mechanism. (author)

A pressure and magnetotransport study of binary quasicrystal YbCd5.7

International Nuclear Information System (INIS)

Dhar, S K; Della Mea, M; Bauer, E; Manfrinetti, P; Palenzona, A

2004-01-01

We have probed the quasicrystalline state in binary YbCd 5.7 by monitoring its electrical resistivity between 1.5 and 300 K in externally applied hydrostatic pressure up to 16 kbar and measuring its magnetoresistivity up to 12 T from 0.5 to 20 K. The thermal variation of the resistivity is practically unaffected by pressure, indicating the stability of the quasicrystalline state in this pressure regime. A positive magnetoresistance, Δρ/ρ, of ∼ 0.8% is observed at 0.65 K, which reduces to ∼ 0.4% at 20 K in the maximum applied field of 12 T. Though the magnetoresistance of the sample investigated is about an order of magnitude larger than expected on the basis of the empirically derived relationship Δρ/ρ ∼ ρ 1.3 observed for a large number of quasicrystals, it is much below the unusually large anomalous magnetoresistance (20-200%) reported earlier in the literature. We believe that the intrinsic magnetoresistivity of YbCd 5.7 in different samples may be primarily masked by the presence of traces of free Cd which is known to have a giant magnetoresistivity at low temperatures

Structural and optical properties of nanocrystalline CdSe and Al:CdSe thin films for photoelectrochemical application

Energy Technology Data Exchange (ETDEWEB)

Gawali, Sanjay A. [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur - 416 004 (India); Bhosale, C.H., E-mail: bhosale_ch@yahoo.com [Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur - 416 004 (India)

2011-10-03

Highlights: {yields} The CdSe and Al:CdSe thin films have been successfully deposited by SPT. {yields} Hexagonal cubic structured CdSe and Al: CdSe thin films are observed. {yields} Large number of fine grains, Uniform and compact growth morphology. {yields} Hydrophilic surface nature. {yields} Al:CdSe have better PEC performance than CdSe. - Abstract: Nanocrystalline CdSe and Al:CdSe semiconductor thin films have been successfully synthesized onto amorphous and FTO glass substrates by spray pyrolysis technique. Aqueous solutions containing precursors of Cd and Se have been used to obtain good quality films. The optimized films have been characterized for their structural, morphological, wettability and optical properties. X-ray diffraction (XRD) studies show that the films are polycrystalline in nature with hexagonal crystal structure. Scanning electron microscopy (SEM) studies show that the film surface is smooth, uniform and compact in nature. Water wettability study reveals that the films are hydrophilic behavior. The formation of CdSe and Al:CdSe thin film were confirmed with the help of FTIR spectroscopy. UV-vis spectrophotometric measurement showed a direct allowed band gap lying in the range 1.673-1.87 eV. Output characteristics were studied by using cell configuration n- CdSe/Al:CdSe |1 M (NaOH + Na{sub 2} + S)|C. An efficient solar cell having a power conversion efficiency of 0.38% at illumination 25 mW cm{sup -2} was fabricated.

Pulsed laser deposition and thermoelectric properties of In-and Yb-doped CoSb3 skutterudite thin films

KAUST Repository

Sarath Kumar, S. R.

2011-07-29

In-and Yb-doped CoSb3 thin films were prepared by pulsed laser deposition. Process optimization studies revealed that a very narrow process window exists for the growth of single-phase skutterudite films. The electrical conductivity and Seebeck coefficient measured in the temperature range 300-700 K revealed an irreversible change on the first heating cycle in argon ambient, which is attributed to the enhanced surface roughness of the films or trace secondary phases. A power factor of 0.68 W m-1 K-1 was obtained at ∼700 K, which is nearly six times lower than that of bulk samples. This difference is attributed to grain boundary scattering that causes a drop in film conductivity. Copyright © Materials Research Society 2011.

Structural, spectroscopic, and tunable laser properties of Yb3+ -doped NaGd(WO4)2

Science.gov (United States)

Cascales, C.; Serrano, M. D.; Esteban-Betegón, F.; Zaldo, C.; Peters, R.; Petermann, K.; Huber, G.; Ackermann, L.; Rytz, D.; Dupré, C.; Rico, M.; Liu, J.; Griebner, U.; Petrov, V.

2006-11-01

Single crystals of Yb3+ -doped NaGd(WO4)2 with up to 20mol% ytterbium content have been grown by the Czochralski technique in air or in N2+O2 atmosphere and cooled to room temperature at different rates (4-250°C/h) . Only the noncentrosymmetric tetragonal space group I4¯ accounts for all reflections observed in the single crystal x-ray diffraction analysis. The distortion of this symmetry with respect to the centrosymmetric tetragonal space group I41/a is much lower for crystals cooled at a fast rate. Na+ , Gd3+ , and Yb3+ ions share the two nonequivalent 2b and 2d sites of the I4¯ structure, but Yb3+ (and Gd3+ ) ions are found preferentially in the 2b site. Optical spectroscopy at low (5K) temperature provides additional evidence of the existence of these two sites contributing to the line broadening. The comparison with the F7/22(n) and F5/22(n') Stark energy levels calculated using the crystallographic Yb-O bond distances allows to correlate the experimental optical bands with the 2b and 2d sites. As a novel uniaxial laser host for Yb3+ , NaGd(WO4)2 is characterized also with respect to its transparency, band-edge, refractive indices, and main optical phonons. Continuous-wave Yb3+ -laser operation is studied at room temperature both under Ti:sapphire and diode laser pumping. A maximum slope efficiency of 77% with respect to the absorbed power is achieved for the π polarization by Ti:sapphire laser pumping in a three-mirror cavity with Brewster geometry. The emission is tunable in the 1014-1079nm spectral range with an intracavity Lyot filter. Passive mode locking of this laser produces 120fs long pulses at 1037.5nm with an average power of 360mW at ≈97MHz repetition rate. Using uncoated samples of Yb:NaGd(WO4)2 at normal incidence in simple two-mirror cavities, output powers as high as 1.45W and slope efficiencies as high as 51% are achieved with different diode laser pump sources.

Scanning thermal microscopy of Bi{sub 2}Te{sub 3} and Yb{sub 0.19}Co{sub 4}Sb{sub 12} thermoelectric films

Energy Technology Data Exchange (ETDEWEB)

Zeipl, Radek; Remsa, Jan; Kocourek, Tomas [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Jelinek, Miroslav [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Czech Technical University in Prague, Faculty of Biomedical Engineering, Kladno (Czech Republic); Vanis, Jan [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Institute of Photonics and Electronics ASCR v.v.i., Prague (Czech Republic); Navratil, Jiri [Institute of Macromolecular Chemistry ASCR v.v.i., Prague (Czech Republic)

2016-04-15

Thermal conductivity of thermoelectric Bi{sub 2}Te{sub 3} and Yb{sub 0.19}Co{sub 4}Sb{sub 12} thin nanolayers of different thicknesses prepared by pulsed laser deposition on Si (100) substrates was studied by a scanning thermal microscope working in AC current pulse mode. A sensitivity of the approach is demonstrated on the steep Si substrate-layer boundary made by a Ga+ focused ion beam technique. Transport and thermoelectric properties such as in-plane electrical resistivity and the Seebeck coefficient were studied in temperature range from room temperature up to 200 C. The room temperature thermal conductivity of the layers was estimated from thermoelectric figure of merit that was measured by the Harman technique, in which parameters related to electrical conductivity, Seebeck coefficient and thermal conductivity are measured at the same place and at the same time with electrical current flowing through the layer. For Yb{sub 0.19}Co{sub 4}Sb{sub 12} and Bi{sub 2}Te{sub 3} layers, we observed room temperature electrical resistivity of about 7 and 1 mΩcm, the Seebeck coefficient of -112 and -61μVK{sup -1}, thermoelectric figure of merit about 0.04 and 0.13 and we estimated thermal conductivity of about 1.3 and 0.9 WK{sup -1}m{sup -1}, respectively. (orig.)

Structure and properties of ZnSxSe1-x thin films deposited by thermal evaporation of ZnS and ZnSe powder mixtures

Science.gov (United States)

Valeev, R. G.; Romanov, E. A.; Vorobiev, V. L.; Mukhgalin, V. V.; Kriventsov, V. V.; Chukavin, A. I.; Robouch, B. V.

2015-02-01

Interest to ZnSxSe1-x alloys is due to their band-gap tunability varying S and Se content. Films of ZnSxSe1-x were grown evaporating ZnS and ZnSe powder mixtures onto SiO2, NaCl, Si and ITO substrates using an original low-cost method. X-ray diffraction patterns and Raman spectroscopy, show that the lattice structure of these films is cubic ZnSe-like, as S atoms replace Se and film compositions have their initial S/Se ratio. Optical absorption spectra show that band gap values increase from 2.25 to 3 eV as x increases, in agreement with the literature. Because S atomic radii are smaller than Se, EXAFS spectra confirm that bond distances and Se coordination numbers decrease as the Se content decreases. The strong deviation from linearity of ZnSe coordination numbers in the ZnSxSe1-x indicate that within this ordered crystal structure strong site occupation preferences occur in the distribution of Se and S ions. The behavior is quantitatively confirmed by the strong deviation from the random Bernoulli distribution of the three sight occupation preference coefficients of the strained tetrahedron model. Actually, the ternary ZnSxSe1-x system is a bi-binary (ZnS+ZnSe) alloy with evanescent formation of ternary configurations throughout the x-range.

Treatment of Neuroblastoma with an Engineered "Obligate" Anaerobic Salmonella typhimurium Strain YB1.

Science.gov (United States)

Ning, Bo-Tao; Yu, Bin; Chan, Shing; Chan, Jian-Liang; Huang, Jian-Dong; Chan, Godfrey Chi-Fung

2017-01-01

Purpose Neuroblastoma is an embryonic solid tumor derived from the progenitors of the sympathetic nervous system. More than half of the patients developed metastatic disease at the time of initial diagnosis and had poor outcome with current therapeutic approaches. In recent years, some obligate and facultative anaerobic bacteria were reported to target the hypoxic and necrotic region of solid tumor models and caused tumor regression. We recently successfully constructed an "obligate" anaerobic Salmonella strain YB1 that was applied in breast cancer nude mice model by us. Here, we report the application of YB1 in neuroblastoma treatment. Methods The anti-cancer effect and side-effects of YB1 was examined in both in vitro and in vivo experiment. Previous established orthotopic neuroblastoma SCID/beige murine model using SK-NLP/luciferase cell line was adopted. Results In vitro , YB1 induced apoptosis for up to 31.4% of the neuroblastoma cells under anaerobic condition, three times more than that under aerobic condition (10.9%). The expression of both Toll like Receptor 4 and 5 (TLR4 and TLR5) in cancer cells were significantly up-regulated ( p anaerobic condition. In mouse model, YB1 preferentially accumulated inside the core of the tumors, rather than in normal tissues as our previous reported. This is suggestive of the hypoxic nature of tumor core. Tumor growth was significantly retarded in YB1 treatment group ( n=6, P<0.01 ). Furthermore, there was no long-term organ damage noted in all the organs examined including heart, lung, liver, spleen and brain in the YB1 treated mice. Conclusion The genetic modified Salmonella strain YB1 is a promising anti-tumor strategy against the tumor bulk for neuroblastoma. Future study can be extended to other common cancer types to verify the relative efficacy on different neoplastic cells.

Effects of laser irradiation on optical properties of amorphous and annealed Ga15Se81In4 and Ga15Se79In6 chalcogenide thin films

International Nuclear Information System (INIS)

Al-Ghamdi, A.A.; Khan, Shamshad A.; Al-Heniti, S.; Al-Agel, F.A.; Al-Harbi, T.; Zulfequar, M.

2010-01-01

Amorphous thin films of Ga 15 Se 81 In 4 and Ga 15 Se 79 In 6 glassy alloys with thickness 3000 A were prepared by thermal evaporation onto chemically cleaned glass substrates. The changes in optical properties due to the influence of laser radiation on amorphous and thermally annealed thin films of Ga 15 Se 81 In 4 and Ga 15 Se 79 In 6 were calculated from absorbance and reflectance spectra as a function of photon energy in the wave length region 400-1000 nm. Analysis of the optical absorption data shows that the rule of non-direct transitions predominates. The optical band gaps observed to decrease with the increase of annealing temperatures. Furthermore, exposing thin films to laser irradiation leads to a decrease in optical band gap, absorption coefficient, refractive index and extinction coefficient for both as-prepared and annealed films. The decrease in the optical band gap is explained on the basis of change in nature of films, from amorphous to polycrystalline state, with the increase of annealing temperature and by laser irradiation for 10 min exposure time. Outcomes of our study confirm that this system may be used for photovoltaic devices.

Lifetime-broadening-suppressed X-ray absorption spectrum of β-YbAlB4 deduced from Yb 3d → 2p resonant X-ray emission spectroscopy

International Nuclear Information System (INIS)

Kawamura, Naomi; Mizumaki, Masaichiro; Kanai, Noriko; Hayashi, Hisashi; Matsuda, Yasuhiro H.; Kuga, Kentaro; Nakatsuji, Satoru; Watanabe, Shinji

2017-01-01

In this work, the Yb 3d → 2p (Yb Lα 1,2 ) resonant X-ray emission spectrum of β-YbAlB 4 was acquired using excitation energies around the Yb L 3 -edge, at 2 K. Subsequently, the lifetime-broadening-suppressed (LBS) X-ray absorption structure (XAS) spectrum was obtained using the SIM-RIXS program. This spectrum was found to exhibit clearly resolved pre-edge and shoulder structures. Resonant Lα 1 emission spectra were well reproduced from LBS-XAS profiles over wide ranges of excitation and emission energies. In contrast, noticeable discrepancies appeared between the experimental and simulated Lα 2 emission spectra, suggesting an effect resulting from M 4 M 5 O 1 Coster-Kronig transitions. LBS-XAS, in conjunction with partial fluorescence yield (PFY) XAS and transmission XAS, determined a value for the Yb valence (v) in β-YbAlB 4 of 2.76 ± 0.08 at 2 K. Despite this relatively large uncertainty in v, each method provided a consistent variation in valence (δv) as the temperature was raised from 2 to 280 K: 0.060 ± 0.004 (LBS-XAS), 0.061 ± 0.005 (PFY-XAS) and 0.058 ± 0.007 (transmission XAS). The smaller δv associated with LBS-XAS demonstrates the greater precision of this method. (author)

Characterization of the electronic properties of YB{sub 4} and YB{sub 6} using {sup 11}B NMR and first-principles calculations

Energy Technology Data Exchange (ETDEWEB)

Jaeger, B.; Paluch, S.; Wolf, W.; Herzig, P.; Zogal, O.J.; Shitsevalova, N.; Paderno, Y

2004-11-30

Two compounds, tetragonal YB{sub 4} and cubic YB{sub 6}, have been investigated by electric-field gradient (EFG) and Knight shift measurements at the boron sites using the {sup 11}B nuclear magnetic resonance (NMR) technique and by performing first-principles calculations. In YB{sub 6} {sup 11}B (I=3/2) NMR spectra reveal patterns typical for an axially symmetric field gradient with a quadrupole coupling frequency of {nu}{sub Q}=600{+-}15 kHz. In the second boride (YB{sub 4}) three different EFGs were observed corresponding to the three inequivalent crystallographic sites for the boron atoms (4h, 4e, and 8j). They correspond to: {nu}{sub Q}(4h)=700{+-}30 kHz with an asymmetry parameter {eta}=0.02{+-}0.02, {nu}{sub Q}(4e)=515{+-}30 kHz, {eta}=0.00+0.02/-0.00, and {nu}{sub Q}(8j)=515{+-}40 kHz, {eta}=0.46{+-}0.08. The Knight shifts measured by magic-angle spinning (MAS) NMR at room temperature are very small being 0.6{+-}8 and -1{+-}8 ppm for YB{sub 4} and YB{sub 6}, respectively. For the theoretical calculations structure optimizations were performed as a first step. For the obtained structural parameters the EFGs were computed within the local-density approximation. Very satisfactory agreement between experimental and theoretical results is obtained both for the structural parameters and the B EFGs, thus confirming the underlying structural models. In addition to the EFGs, band structures, densities of states, and valence-electron densities are presented and the bonding situation in the two yttrium borides is discussed. The band-structure results are compatible with the very low values for the Knight shifts mentioned above.

Two-step photoconductivity in LiY x Lu1 - x F4:Ce,Yb crystals

Science.gov (United States)

Nurtdinova, L. A.; Korableva, S. L.; Leontiev, A. V.

2016-10-01

Photoconductivity of LiY x Lu1- x F4:Ce,Yb ( x = 0-1) crystals is measured under one- and two-step excitation. It is established that the photoconductivity is due to intra-center transitions from excited states of Ce3+ ions. The position of the ground 4 f-state of Ce3+ ion relative to the bottom of the conduction band is determined. The choice of pumping conditions to obtain the lasing on the 5 d-4 f transitions of trivalent cerium in these active media is substantiated.

Microwave hydrothermal synthesis and upconversion properties of Yb3+/Er3+ doped YVO4 nanoparticles.

Science.gov (United States)

Kshetri, Yuwaraj K; Regmi, Chhabilal; Kim, Hak-Soo; Lee, Soo Wohn; Kim, Tae-Ho

2018-05-18

Yb 3+ and Er 3+ doped YVO 4 (Yb 3+ /Er 3+ :YVO 4 ) nanoparticles with highly efficient near-infrared to visible upconversion properties have been synthesized by microwave hydrothermal process. Uniform-sized Yb 3+ /Er 3+ :YVO 4 nanoparticles were synthesized within 1 h at 140 °C which is relatively faster than the conventional hydrothermal process. Under 980 nm laser excitation, strong green and less strong red emissions are observed which are attributed to 2 H 11/2 , 4 S 3/2 to 4 I 15/2 and 4 F 9/2 to 4 I 15/2 transitions of Er 3+ respectively. The emission intensity is found to depend strongly on the concentration of Yb 3+ . The quadratic dependence of upconversion intensity on the excitation power indicates that the upconversion process is governed by two-photon absorption process.

Microwave hydrothermal synthesis and upconversion properties of Yb3+/Er3+ doped YVO4 nanoparticles

Science.gov (United States)

Kshetri, Yuwaraj K.; Regmi, Chhabilal; Kim, Hak-Soo; Wohn Lee, Soo; Kim, Tae-Ho

2018-05-01

Yb3+ and Er3+ doped YVO4 (Yb3+/Er3+:YVO4) nanoparticles with highly efficient near-infrared to visible upconversion properties have been synthesized by microwave hydrothermal process. Uniform-sized Yb3+/Er3+:YVO4 nanoparticles were synthesized within 1 h at 140 °C which is relatively faster than the conventional hydrothermal process. Under 980 nm laser excitation, strong green and less strong red emissions are observed which are attributed to 2H11/2, 4S3/2 to 4I15/2 and 4F9/2 to 4I15/2 transitions of Er3+ respectively. The emission intensity is found to depend strongly on the concentration of Yb3+. The quadratic dependence of upconversion intensity on the excitation power indicates that the upconversion process is governed by two-photon absorption process.

YB-1 overexpression promotes a TGF-β1-induced epithelial–mesenchymal transition via Akt activation

International Nuclear Information System (INIS)

Ha, Bin; Lee, Eun Byul; Cui, Jun; Kim, Yosup; Jang, Ho Hee

2015-01-01

The Y-box binding protein-1 (YB-1) is a transcription/translation regulatory protein, and the expression thereof is associated with cancer aggressiveness. In the present study, we explored the regulatory effects of YB-1 during the transforming growth factor-β1 (TGF-β1)-induced epithelial-to-mesenchymal transition (EMT) in lung adenocarcinoma cells. Downregulation of YB-1 increased E-cadherin promoter activity, and upregulation of YB-1 decreased promoter activity, suggesting that the YB-1 level may be correlated with the EMT. TGF-β1 induced YB-1 expression, and TGF-β1 translocated cytosolic YB-1 into the nucleus. YB-1 overexpression promoted TGF-β1-induced downregulation of epithelial markers, upregulation of mesenchymal markers, and cell migration. Moreover, YB-1 overexpression enhanced the expression of E-cadherin transcriptional repressors via TGF-β1-induced Akt activation. Our findings afford new insights into the role played by YB-1 in the TGF-β1 signaling pathway. - Highlights: • YB-1 regulates E-cadherin expression in A549 cells. • TGF-β1 induces upregulating and nuclear localization of YB-1. • YB-1 overexpression accelerates TGF-β1-induced EMT and cell migration. • YB-1 regulates Snail and Slug expression via Akt activation

Multilayer SnSb4-SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability.

Science.gov (United States)

Liu, Ruirui; Zhou, Xiao; Zhai, Jiwei; Song, Jun; Wu, Pengzhi; Lai, Tianshu; Song, Sannian; Song, Zhitang

2017-08-16

A multilayer thin film, comprising two different phase change material (PCM) components alternatively deposited, provides an effective means to tune and leverage good properties of its components, promising a new route toward high-performance PCMs. The present study systematically investigated the SnSb 4 -SbSe multilayer thin film as a potential PCM, combining experiments and first-principles calculations, and demonstrated that these multilayer thin films exhibit good electrical resistivity, robust thermal stability, and superior phase change speed. In particular, the potential operating temperature for 10 years is shown to be 122.0 °C and the phase change speed reaches 5 ns in the device test. The good thermal stability of the multilayer thin film is shown to come from the formation of the Sb 2 Se 3 phase, whereas the fast phase change speed can be attributed to the formation of vacancies and a SbSe metastable phase. It is also demonstrated that the SbSe metastable phase contributes to further enhancing the electrical resistivity of the crystalline state and the thermal stability of the amorphous state, being vital to determining the properties of the multilayer SnSb 4 -SbSe thin film.

Combinatorial investigation of the effects of sodium on Cu 2ZnSnSe4 polycrystalline thin films

Science.gov (United States)

Gibbs, Alex Hilton

Cu2ZnSnSe4 (CZTSe) possess highly suitable optical and electronic properties for use as an absorber layer in thin film solar cells. CZTSe also has potential to achieve terawatt level solar energy production due to its inexpensive and abundant material constituents. Currently, fabricating CZTSe devices with the expected theoretical performance has not been achieved, making the growth and formation of CZTSe an interesting topic of research. In this work, a two-step vacuum fabrication process consisting of RF co-sputtering followed by reactive annealing was explored as a viable technique for synthesizing CZTSe thin films. Furthermore, the enhancement of the fabrication process by the incorporation of sodium during annealing was studied using a combinatorial approach. Film composition was analyzed using electron dispersive spectroscopy. Structure, phase morphology, and formation were determined using scanning electron microscopy, x-ray diffraction, atomic force microscopy and raman spectroscopy. Optical and electronic properties were characterized using UV-Vis and Voc were measurements under a one sun solar simulator. RF co-sputtering CuSe, ZnSe, and SnSe precursors produced films with good thickness uniformity, adhesion and stoichiometry control over 3 x 3 in 2 substrates. Composition measurements showed that the precursor films maintained stability during an annealing process of 580° C for 20 minutes producing near stoichiometric CZTSe. However, grain size was small with an average diameter of 350 nm. The CZTSe film produced by this process exhibited a suitable absorption coefficient of > 104 cm-1 and aband gap near 1.0 eV. The film also produced an XRD pattern consistent with tetragonal CZTSe with no secondary phase formation with the exception of approximately 12.5 nm of interfacial MoSe2 formation at the back contact. The combinatorial investigation of the influence of sodium on CZTSe growth and morphology was achieved using a custom built constant withdraw

Downshifting by energy transfer in Eu{sup 3+}/Yb{sup 3+} codoped Ba{sub 4}La{sub 6}(SiO{sub 4}){sub 6}O glass ceramics

Energy Technology Data Exchange (ETDEWEB)

Zhang, W.J., E-mail: wjzhang03@163.com [School of Material Science and Engineering and Shandong Provincial Key Lab of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022 (China); State Key Lab of Luminescent Materials and Devices and Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China); Li, X.B.; Wu, L.J.; Yu, Y.Y.; Wang, X.Z.; Liu, S.Q.; Wang, Z. [School of Material Science and Engineering and Shandong Provincial Key Lab of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022 (China); Wang, W.C.; Liu, Y. [State Key Lab of Luminescent Materials and Devices and Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)

2017-03-01

We report on an efficient near-infrared downshifting in Eu{sup 3+}/Yb{sup 3+} codoped glass ceramics containing Ba{sub 4}La{sub 6}(SiO{sub 4}){sub 6}O crystals. The structural and luminescence properties were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), static and dynamic photoemission and excitation spectroscopy. After crystallization, the doping ions are found to be selectively incorporated into the precipitated oxyapatite crystals on La{sup 3+} sites, contributing to the remarkably enhanced visible emission of Eu{sup 3+} under 394 nm excitation. The Eu{sup 3+}/Yb{sup 3+} codoped glass ceramics additionally exhibits efficient near-infrared luminescence of Yb{sup 3+} around 1000 nm upon photon excitation of Eu{sup 3+} within the 300–550 nm range. The reduced visible emission and decay time of {sup 5}D{sub 0} state with Yb{sup 3+} codoping further confirm the energy transfer from Eu{sup 3+} to Yb{sup 3+}, which is promoted due to the shortened distance between Eu{sup 3+} and Yb{sup 3+} within crystals. The maximum energy transfer efficiency is evaluated to be 61%. It is revealed that energy transfer process occurs predominantly through the cross relaxation of Eu{sup 3+}({sup 5}D{sub 0}) + Yb{sup 3+}({sup 2}F{sub 7/2}) → Eu{sup 3+}({sup 7}F{sub 6}) + Yb{sup 3+}({sup 7}F{sub 5/2}).

Crystallization kinetics of a-Se, part 4: thin films

Science.gov (United States)

Svoboda, Roman; Gutwirth, Jan; Málek, Jiří

2014-09-01

Differential scanning calorimetry was used to study the crystallization behaviour of selenium thin films in dependence on film thickness and deposition rate. In the current work, which is the fourth in a sequence of articles dealing with crystallization kinetics of a-Se, the non-isothermal crystallization kinetics was described in terms of the Johnson-Mehl-Avrami nucleation-growth model. Two-dimensional crystallite growth, consistent with the idea of sterically restricted crystallization in a thin layer, was confirmed for all data. It was found that neither the film thickness (tested within the 100-2350 nm range) nor the deposition rate appears to have any significant influence on the crystallization kinetics. However, the higher amount of intrinsic defects possibly produced by a higher deposition rate seems to accelerate the crystallization, shifting it towards lower temperatures. Very good correlation between the results obtained for thin films and those for fine powders was found. Based on the obtained results, interpretations of relevant literature data were made.

Lattice parameter values and phase transitions for the Cu2Cd1-zMnzSnSe4 and Cu2Cd1-zFezSnSe4 alloys

International Nuclear Information System (INIS)

Moreno, E.; Quintero, M.; Morocoima, M.; Quintero, E.; Grima, P.; Tovar, R.; Bocaranda, P.; Delgado, G.E.; Contreras, J.E.; Mora, A.E.; Briceno, J.M.; Avila Godoy, R.; Fernandez, J.L.; Henao, J.A.; Macias, M.A.

2009-01-01

X-ray powder diffraction measurements and differential thermal analysis (DTA) were made on polycrystalline samples of the Cu 2 Cd 1-z Mn z SnSe 4 and Cu 2 Cd 1-z Fe z SnSe 4 alloy systems. The diffraction patterns were used to show the equilibrium conditions and to derive lattice parameter values. For Cu 2 Cd 0.8 Fe 0.2 SnSe 4 as well as for Cu 2 Cd 0.2 Fe 0.8 SnSe 4 the crystal structures were refined using the Rietveld method. It was found that the internal distortion parameter σ decreases as Cd is replaced by either Mn and/or Fe. For the Cu 2 Cd 1-z Mn z SnSe 4 and Cu 2 Cd 1-z Fe z SnSe 4 alloy systems, only two single solid phase fields, the tetragonal stannite α(I4-bar2m) and the wurtz-stannite δ (Pmn2 1 ) structures were found to occur in the diagram. In addition to the tetragonal stannite α phase extra X-ray diffraction lines due to MnSe and/or FeSe 2 were observed for as grown samples in the range 0.7 < z < 1.0. However, it was found that the amount of the extra phase decreased for the compressed samples.

An investigation on silar Cu(In1-xAlx)Se2 thin films

International Nuclear Information System (INIS)

Dhanam, M.; Kavitha, B.; Velumani, S.

2010-01-01

Cu(In 1-x Al x )Se 2 [CIAS] thin films were prepared for the first time by successive ionic layer adsorption and reaction [SILAR] method with two different dipping cycles. The thickness of the films was measured by gravimetric technique. The structural, morphological, compositional, optical transition and electrical investigation of SILAR CIAS thin films with respect to two different dipping cycles have been discussed in this paper.

Studies on structural, optical, and photoelectric properties of CdS{sub 1-x}Se{sub x} films fabricated by selenization of chemical bath deposited CdS films

Energy Technology Data Exchange (ETDEWEB)

Lu, Tianyu; Gu, Han; Ge, Zhenhua; Zhang, Lei; Wang, Zhicheng; Fang, Yong; Han, Zhida; Qian, Bin; Jiang, Xuefan [Department of Physics, Changshu Institute of Technology, Changshu (China); Wu, Wangping [School of Mechanical Engineering, Changzhou University, Changzhou (China)

2017-02-15

In this paper, high-photosensitive CdS{sub 1-x}Se{sub x} films are synthesized by a two-step technique, which includes the chemical bath deposition of CdS films and a following selenization process. The structural, optical, and photoelectric properties of the CdS{sub 1-x}Se{sub x} films were investigated. With the substitution of selenium for sulfur atoms, grain sizes of the as-prepared CdS{sub 1-x}Se{sub x} films are effectively enlarged and reach the scales of the films thickness when the selenization temperature exceeds 450 C. With increasing the selenization temperature from 350 to 550 C, the band gaps of CdS{sub 1-x}Se{sub x} films gradually decrease from 2.37 to 1.82 eV. Under the co-action of the grain-size enlargement and band-gap decrease, the CdS{sub 1-x}Se{sub x} films fabricated at 450 C show very pronounced photosensitivity. Noteworthy, the ratio of photo to dark conductivity of the CdS{sub 1-x}Se{sub x} film selenized at 450 C reaches 1.1 x 10{sup 5}, suggesting a promising application potential in the photoelectric devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Rhodium-rich silicides RERh{sub 6}Si{sub 4} (RE=La, Nd, Tb, Dy, Er, Yb)

Energy Technology Data Exchange (ETDEWEB)

Vosswinkel, Daniel; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

2017-07-01

Polycrystalline RERh{sub 6}Si{sub 4} (RE=La, Nd, Tb, Dy, Er, Yb) samples can be synthesized by arc-melting of the elements. Single crystals of LaRh{sub 6}Si{sub 4}, NdRh{sub 6}Si{sub 4} and YbRh{sub 6}Si{sub 4} were synthesized from the elements in bismuth fluxes (non-reactive flux medium). The structures were refined on the basis of single-crystal X-ray diffractometer data: LiCo{sub 6}P{sub 4} type, P anti 6m2, a=700.56(3), c=380.55(1) pm, wR2=0.0257, 317 F{sup 2} values, 19 variables for LaRh{sub 6}Si{sub 4}, a=698.4(5), c=377.7(2) pm, wR2=0.0578, 219 F{sup 2} values, 19 variables for NdRh{sub 6}Si{sub 4} and a=696.00(3), c=371.97(1) pm, wR2=0.0440, 309 F{sup 2} values, 19 variables for YbRh{sub 6}Si{sub 4}. The rhodium and silicon atoms build up three-dimensional, covalently bonded [Rh{sub 6}Si{sub 4}]{sup δ-} polyanionic networks with Rh-Si distances ranging from 239 to 249 pm. The rare earth atoms fill larger cavities within channels of these networks and they are coordinated by six silicon and twelve rhodium atoms in the form of hexa-capped hexagonal prisms.

Treatment of Neuroblastoma with an Engineered “Obligate” Anaerobic Salmonella typhimurium Strain YB1

Science.gov (United States)

Ning, Bo-Tao; Yu, Bin; Chan, Shing; Chan, Jian-liang; Huang, Jian-Dong; Chan, Godfrey Chi-Fung

2017-01-01

Purpose Neuroblastoma is an embryonic solid tumor derived from the progenitors of the sympathetic nervous system. More than half of the patients developed metastatic disease at the time of initial diagnosis and had poor outcome with current therapeutic approaches. In recent years, some obligate and facultative anaerobic bacteria were reported to target the hypoxic and necrotic region of solid tumor models and caused tumor regression. We recently successfully constructed an “obligate” anaerobic Salmonella strain YB1 that was applied in breast cancer nude mice model by us. Here, we report the application of YB1 in neuroblastoma treatment. Methods The anti-cancer effect and side-effects of YB1 was examined in both in vitro and in vivo experiment. Previous established orthotopic neuroblastoma SCID/beige murine model using SK-NLP/luciferase cell line was adopted. Results In vitro, YB1 induced apoptosis for up to 31.4% of the neuroblastoma cells under anaerobic condition, three times more than that under aerobic condition (10.9%). The expression of both Toll like Receptor 4 and 5 (TLR4 and TLR5) in cancer cells were significantly up-regulated (panaerobic condition. In mouse model, YB1 preferentially accumulated inside the core of the tumors, rather than in normal tissues as our previous reported. This is suggestive of the hypoxic nature of tumor core. Tumor growth was significantly retarded in YB1 treatment group (n=6, P<0.01). Furthermore, there was no long-term organ damage noted in all the organs examined including heart, lung, liver, spleen and brain in the YB1 treated mice. Conclusion The genetic modified Salmonella strain YB1 is a promising anti-tumor strategy against the tumor bulk for neuroblastoma. Future study can be extended to other common cancer types to verify the relative efficacy on different neoplastic cells. PMID:28775780

Facile synthesis of NaYF4:Yb, Ln/NaYF4:Yb core/shell upconversion nanoparticles via successive ion layer adsorption and one-pot reaction technique

NARCIS (Netherlands)

Zeng, Q.; Xue, B.; Zhang, Y.; Wang, D.; Liu, X.; Tu, L.; Zhao, H.; Kong, X.; Zhang, H.

2013-01-01

The facile one-pot synthesis of NaYF4:Yb, Ln/NaYF4:Yb core/shell (CS) upconversion nanoparticles (UCNPs) was firstly developed through the successive ion layer adsorption and reaction (SILAR) technique, which represents an attractive alternative to conventional synthesis utilizing the chloride of Ln

Optical and structural properties of FeSe2 thin films obtained by selenization of sprayed amorphous iron oxide films

International Nuclear Information System (INIS)

Ouertani, B.; Ouerfelli, J.; Saadoun, M.; Zribi, M.; Rabha, M.Ben; Bessais, B.; Ezzaouia, H.

2006-01-01

We report in this work the optical and structural properties of iron diselenide films (FeSe 2 ) obtained by selenization under vacuum of amorphous iron oxide films predeposited by spray pyrolysis. The structure of the FeSe 2 films was investigated by scanning electron microscopy (SEM), microprobe analyses, atomic force microscopy (AFM) and X-ray diffraction (XRD). XRD and micro-probe analyses showed that FeSe 2 as well as FeSe 2-x phases begin to appear at a selenization temperature of 500 deg. C. As the selenization temperature rises, the iron diselenide films become more stoichiometric with a dominance of the FeSe 2 phase. At 550 deg. C, a single FeSe 2 phase having good crystallinity was obtained. At 600 deg. C, two phases were detected: the major one corresponds to Fe 3 O 4 , and the minor one to FeSe 2 . SEM surface views show that FeSe 2 films have granular structure with small spherical crystallites. However, layered and clustered FeSe 2 films were found, respectively, at 550 deg. C and 600 deg. C. Absorption measurements show that iron diselenide films have a direct and an indirect gaps of about 1.03 eV and 0.3 eV, which were suggested to be due to the stoichiometric FeSe 2 phase and to a Fe-rich non-stoichiometric phase, respectively

Effect of vacuum annealing and substrate temperature on structural and optical properties of ZnIn2Se4 thin films

Science.gov (United States)

El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

2013-09-01

Zinc indium selenide (ZnIn2Se4) thin films were prepared by the thermal evaporation technique with high deposition rate. The effect of thermal annealing in vacuum on the crystallinity of the as-deposited films was studied at different temperatures (523, 573 and 623 K). The effect of substrate temperature (623 K) for different thickness values (173, 250, 335 and 346 nm) on the optical parameters of ZnIn2Se4 was also studied. The structural studies showed nanocrystalline nature of the room temperature (300 K) deposited films with crystallite size of about a few nanometers. The crystallite size increased up to 31 nm with increasing the annealing temperature in vacuum. From the reflection and transmission data, the refractive index n and the extinction coefficient k were estimated for ZnIn2Se4 thin films and they were found to be independent of film thickness. Analysis of the absorption coefficient data of the as-deposited films revealed the existence of allowed direct and indirect transitions with optical energy gaps of 2.21 eV and 1.71 eV, respectively. These values decreased with increasing annealing temperature. At substrate temperature of 623 K, the direct band gap increased to 2.41 eV whereas the value of indirect band gap remained nearly unchanged. The dispersion analysis showed that the values of the oscillator energy Eo, dispersion energy Ed, dielectric constant at infinite frequency ε∞, and lattice dielectric constant εL were changed appreciably under the effect of annealing and substrate temperature. The covalent nature of structure was studied as a function of the annealing and substrate temperature using an empirical relation for the dispersion energy Ed. Generalized Miller's rule and linear refractive index were used to estimate the nonlinear susceptibility and nonlinear refractive index of the thin films.

AgSbSe2 and AgSb(S,Se)2 thin films for photovoltaic applications

International Nuclear Information System (INIS)

Garza, J.G.; Shaji, S.; Rodriguez, A.C.; Das Roy, T.K.; Krishnan, B.

2011-01-01

Silver antimony selenide (AgSbSe 2 ) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb 2 S 3 ), silver selenide (Ag 2 Se), selenium (Se) and silver (Ag). Sb 2 S 3 thin film was prepared from a chemical bath containing SbCl 3 and Na 2 S 2 O 3 , Ag 2 Se from a solution containing AgNO 3 and Na 2 SeSO 3 and Se thin films from an acidified solution of Na 2 SeSO 3 , at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 deg. C in vacuum (10 -3 Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe 2 or AgSb(S,Se) 2 depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe 2 /Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V oc = 435 mV and J sc = 0.08 mA/cm 2 under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe 2 as an absorber material by a non-toxic selenization process is achieved.

Fermi-level tuning of the Dirac surface state in (Bi1-x Sb x )2Se3 thin films

Science.gov (United States)

Satake, Yosuke; Shiogai, Junichi; Takane, Daichi; Yamada, Keiko; Fujiwara, Kohei; Souma, Seigo; Sato, Takafumi; Takahashi, Takashi; Tsukazaki, Atsushi

2018-02-01

We report on the electronic states and the transport properties of three-dimensional topological insulator (Bi1-x Sb x )2Se3 ternary alloy thin films grown on an isostructural Bi2Se3 buffer layer on InP substrates. By angle-resolved photoemission spectroscopy, we clearly detected Dirac surface states with a large bulk band gap of 0.2-0.3 eV in the (Bi1-x Sb x )2Se3 film with x  =  0.70. In addition, we observed by Hall effect measurements that the dominant charge carrier converts from electron (n-type) to hole (p-type) at around x  =  0.7, indicating that the Fermi level can be controlled across the Dirac point. Indeed, the carrier transport was shown to be governed by Dirac surface state in 0.63  ⩽  x  ⩽  0.75. These features suggest that Fermi-level tunable (Bi1-x Sb x )2Se3-based heterostructures provide a platform for extracting exotic topological phenomena.

The synthesis and characterization of 7-hydroxy-4-methylcoumarin and the investigation of the fluorescence properties of its 7-hydroxy-4-methylcoumarin-chitosan films

Science.gov (United States)

Wahyuningrum, Deana; Zulqarnaen, Muhammad; Suendo, Veinardi

2014-03-01

Chitosan fluorescent films containing 7-hydroxy-4-methylcoumarin (7H4MC) have been successfully prepared. Used chitosan was obtained from chitin isolated from skin of tiger prawns (Penaeus monodon) through the deproteination, demineralization, and deacetylation process. The yields of chitin and chitosan are 10.66% and 23.83%, respectively. The chitosan has 55.00% degree of deacetylation based on FTIR spectroscopy. Average molecular mass of chitosan which was determined by Ostwald viscometry method is 8.55 × 106 g/mol. The 7H4MC was synthesized from resorcinol and ethyl acetoacetate using amberlyst-15 as catalyst based on Pechmann reaction with chemical yields of 90.01% and the melting point of 189-190°C. The FTIR, 1H-NMR, and 13C-NMR spectroscopies confirmed the structure which corresponds to the structure of 7H4MC. The films of chitosan containing 7H4MC were prepared by solvent evaporation method in 2% (v/v) acetic acid. The 7H4MC content in each film was 0% (blank), 0.2%, 0.4%, 0.6%, and 0.8% (w/w). The UV-Vis spectrum of 7H4MC in methanol showed λmax at 235 and 337 nm. The observed fluorescence is the fluorescence color of cyan. The excitation wavelengths are 200, 235, 275, 337, and 365 nm. The highest intensity of cyan color fluorescence of chitosan containing 7H4MC films was obtained at the concentration of 0.2% of 7-hydroxy-4-methylcoumarin at the excitation wavelength of 275 nm.

Enhanced electrical properties of pulsed laser-deposited CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films via processing control

Energy Technology Data Exchange (ETDEWEB)

Jo, Yeon Hwa; Mohanty, Bhaskar Chandra; Cho, Yong Soo [Department of Materials Science and Engineering, Yonsei University, Seoul (Korea, Republic of)

2010-12-15

Polycrystalline CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films were prepared on soda-lime glass substrates using pulsed laser deposition (PLD) with various process parameters such as laser energy, repetition rate and substrate temperature. It was confirmed that there existed a limited laser energy, i.e. less than 300 mJ, to get phase pure CIGS thin films at room temperature. Particularly, even at room temperature, distinct crystalline CIGS phase was observed in the films. Crystallinity of the films improved with increasing substrate temperature as evidenced by the decrease of FWHM from 0.65 degto 0.54 deg. Slightly Cu-rich surface with Cu{sub 2-x}Se phase was confirmed to exist by Raman spectra, depending on substrate temperature. Improved electrical properties, i.e., carrier concentration of {proportional_to}10{sup 18} cm{sup -3} and resistivity of 10{sup -1}{omega} cm at higher substrate temperature for the optimal CIGS films are assumed to be induced by the potential contributions from highly crystallized thin films, existence of Cu{sub 2-x}Se phase and diffusion of Na from substrates to films. (author)

CuIn{sub x}Ga{sub 1-x}Se{sub 2} thin films prepared by electron beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Venkatachalam, M.; Kannan, M.D.; Jayakumar, S.; Balasundaraprabhu, R.; Nandakumar, A.K. [Thin Film Center, Department of Physics, PSG College of Technology (India); Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology (India)

2008-05-15

CuIn{sub x}Ga{sub 1-x}Se{sub 2} bulk compound of three different compositions x=0.75, 0.80 and 0.85 have been prepared using individual elements of copper, indium, gallium and selenium. Thin films of CuIn{sub x}Ga{sub 1-x}Se{sub 2} have been deposited using the prepared bulk by electron beam evaporation method. The structural studies carried on the deposited films revealed that films annealed at 400 C are crystalline in nature exhibiting chalcopyrite phase. The position of the (1 1 2) peak in the X-ray diffractogram corresponding to the chalcopyrite phase has been found to be dependent on the percentage of gallium in the films. The composition of the prepared bulk and thin films has been identified using energy dispersive X-ray analysis. The photoluminescence spectra of the CuIn{sub x}Ga{sub 1-x}Se{sub 2} films exhibited sharp luminescence peaks corresponding to the band gap of the material. (author)

Structural characterization of vacuum evaporated ZnSe thin films

Indian Academy of Sciences (India)

The lattice parameter, grain size, average internal stress, microstrain, dislocation density and degree of pre- ferred orientation in the film are calculated and correlated with Ts. Keywords. ZnSe thin films; X-ray diffraction; average internal stress; microstrain; dislocation density. 1. Introduction. Thin films of ZnSe has attracted ...

Lattice dynamics and substrate-dependent transport properties of (In, Yb)-doped CoSb3 skutterudite thin films

KAUST Repository

Sarath Kumar, S. R.; Cha, Dong Kyu; Alshareef, Husam N.

2011-01-01

Lattice dynamics, low-temperature electrical transport, and high-temperature thermoelectric properties of (In, Yb)-doped CoSb3thin films on different substrates are reported. Pulsed laser deposition under optimized conditions yielded single

The synthesis and characterization of 7-hydroxy-4-methylcoumarin and the investigation of the fluorescence properties of its 7-hydroxy-4-methylcoumarin-chitosan films

Energy Technology Data Exchange (ETDEWEB)

Wahyuningrum, Deana, E-mail: deana@chem.itb.ac.id [Organic Chemistry Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132 (Indonesia); Zulqarnaen, Muhammad [Chemistry Study Program, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132 (Indonesia); Suendo, Veinardi [Inorganic and Physical Chemistry Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132 (Indonesia)

2014-03-24

Chitosan fluorescent films containing 7-hydroxy-4-methylcoumarin (7H4MC) have been successfully prepared. Used chitosan was obtained from chitin isolated from skin of tiger prawns (Penaeus monodon) through the deproteination, demineralization, and deacetylation process. The yields of chitin and chitosan are 10.66% and 23.83%, respectively. The chitosan has 55.00% degree of deacetylation based on FTIR spectroscopy. Average molecular mass of chitosan which was determined by Ostwald viscometry method is 8.55 × 10{sup 6} g/mol. The 7H4MC was synthesized from resorcinol and ethyl acetoacetate using amberlyst-15 as catalyst based on Pechmann reaction with chemical yields of 90.01% and the melting point of 189–190°C. The FTIR, {sup 1}H–NMR, and {sup 13}C–NMR spectroscopies confirmed the structure which corresponds to the structure of 7H4MC. The films of chitosan containing 7H4MC were prepared by solvent evaporation method in 2% (v/v) acetic acid. The 7H4MC content in each film was 0% (blank), 0.2%, 0.4%, 0.6%, and 0.8% (w/w). The UV-Vis spectrum of 7H4MC in methanol showed λ{sub max} at 235 and 337 nm. The observed fluorescence is the fluorescence color of cyan. The excitation wavelengths are 200, 235, 275, 337, and 365 nm. The highest intensity of cyan color fluorescence of chitosan containing 7H4MC films was obtained at the concentration of 0.2% of 7-hydroxy-4-methylcoumarin at the excitation wavelength of 275 nm.

Transport properties in amorphous U/sub x/-T1/sub -//sub x/ films (T = Fe, Ni, Gd, Tb, and Yb) (invited)

International Nuclear Information System (INIS)

Freitas, P.P.; Plaskett, T.S.; Moreira, J.M.; Amaral, V.S.

1988-01-01

We describe the competing magnetic, localization, and phonon effects on the transport properties of amorphous magnetic U/sub x/T/sub 1-//sub x/ films, with T = Fe, Ni, Gd, Tb, and Yb. Amorphous U/sub x/Fe/sub 1-//sub x/ films change from collinear to random ferromagnetism as x increases, and the temperature dependence of the resistivity denotes the competing effects of spin-flip and non-spin-flip exchange scattering processes. The resistivity has a minimum at T/sub f/ rising sharply below this temperature. The sign of the magnetic resistivity and the magnetoresistance indicates >0, while the anisotropic magnetoresistance indicates a local exchange gap. Amorphous U/sub x/Gd/sub 1-//sub x/ and a-U/sub x/Tb/sub 1-//sub x/ are, respectively, spin glasses and random anisotropy dominated systems. The resistivity increases smoothly through T/sub f/ and has a slight upturn at low temperatures that we associate with weak localization. The magnetoresistance is negative in both systems and the anisotropic magnetoresistance is null, although the applied field induces anisotropic behavior in the Tb containing films (asperomagnets). All samples show quadratic and positive field dependence of magnetoresistance well inside the paramagnetic regime, and a linear regime below T/sub f/. At low temperatures and in the a-U/sub x/Gd/sub 1-//sub x/ films, negative (H)/sup 1/2/ and H 2 regimes occur and are associated with weak localization processes dominated by the inelastic mean free path

New Sr{sub 1−x−z}R{sub x}(NH{sub 4}){sub z}F{sub 2+x−z} (R = Yb, Er) solid solution as precursor for high efficiency up-conversion luminophor and optical ceramics on the base of strontium fluoride

Energy Technology Data Exchange (ETDEWEB)

Rozhnova, Yu. A. [N.E. Bauman Moscow State Technical University, Moscow (Russian Federation); A.M. Prokhorov General Physics Institute, RAS, Moscow (Russian Federation); Kuznetsov, S.V. [A.M. Prokhorov General Physics Institute, RAS, Moscow (Russian Federation); Luginina, A.A. [All-Russian Institute for Scientific and Technical Information (VINITI), Moscow (Russian Federation); Voronov, V.V.; Ryabova, A.V.; Pominova, D.V.; Ermakov, R.P. [A.M. Prokhorov General Physics Institute, RAS, Moscow (Russian Federation); Usachev, V.A.; Kononenko, N.E. [N.E. Bauman Moscow State Technical University, Moscow (Russian Federation); Baranchikov, A.E.; Ivanov, V.K. [N.S. Kurnakov Institute of General and Inorganic Chemistry, RAS, Moscow (Russian Federation); Fedorov, P.P., E-mail: ppfedorov@yandex.ru [A.M. Prokhorov General Physics Institute, RAS, Moscow (Russian Federation)

2016-04-01

In this paper, we describe the use of self-fluorinating conditions for the thermal treatment of Sr{sub 1−x−y−z}Yb{sub x}Er{sub y}(NH{sub 4}){sub z}F{sub 2+x+y−z} precursor for the preparation of high-efficiency SrF{sub 2}:Yb:Er up-converter powders. We report actual SrF{sub 2}:Yb:Er compositions with up-conversion efficiencies exceeding 4% (pumping power 1 W/cm{sup 2} at 974 nm wavelength) and describe the synthesis of ceramics with higher than 80% transmittance at 0.42–7.0 μm. The latter ceramics can be used as a potential IR radiation visualizer. For the first time, we present an analysis of correlation between up-conversion luminescence energy yield and specimen composition for SrF{sub 2}:Yb:Er nanopowders. Taking into account the observed erbium ion up-conversion luminescence in the red part of the visible spectrum, we recommend certain SrF{sub 2}:Yb:Er compositions for practical application in photodynamic cancer therapy. - Highlights: • SrF{sub 2}:Yb/Er luminophor nanopowders were precipitated from aqueous solutions. • Precipitation of Sr{sub 1−x−y−z}Yb{sub x}Er{sub y}(NH{sub 4}){sub z}F{sub 2+x+y−z} solid solution has been proved. • Up-conversion luminescence energy yield luminophors of more than 4% were obtained. • Optical ceramics with 80% transmittance in 0.42–7.0 μm range was synthesized.

Dielectric Properties of Cd1-xZnxSe Thin Film Semiconductors

International Nuclear Information System (INIS)

Wahab, L.A.; Farrag, A.A.; Zayed, H.A.

2012-01-01

Cd 1-x Zn x Se (x=0, 0.5 and 1) thin films of thickness 300 nm have been deposited on highly cleaned glass substrates (Soda-lime glass) by thermal evaporation technique under pressure 10-5 Torr. The crystal structure, lattice parameters and grain size were determined from X-ray diffraction patterns of these films. The dielectric response and ac conductivity of the films are investigated in the frequency range from 80 Hz to 5 MHz and temperature range from 300 K to 420 K. AC conductivity increases linearly with the frequency according to the power relation σ a c (ψ)=A (ψ) s . The dielectric constant and loss show low values at high frequencies. The relaxation time t, resistance R and capacitance C were calculated from Nyquist diagram. The behavior can be modeled by an equivalent parallel RC circuit.

Labelling of ethylenediaminetetramethylene phosphonic acid (EDTMP) with 175Yb

International Nuclear Information System (INIS)

Azmairit Aziz

2009-01-01

Ytterbium-175 ( 175 Yb) is one of radioisotopes that can be used for therapy due to its β-particle emission (T 1/2 = 4.2 d, E β(max) = 480 keV). Beside that, this radioisotope also emits γ-rays of 113 keV (1.9%), 282 keV (3.1%) and 396 keV (6.5%) which are suitable energy for imaging as long as therapeutic applications. EDTMP could be labeled with radionuclide of 175 Yb as an alternative radiopharmaceutical for bone pain palliation due to bone metastases. Labeling of ethylenediaminetetramethylenephosphonic acid with 175 Yb has been studied. Various influential parameters in labeling conditions i.e. the amount of EDTMP ligand, the pH of labeling, incubation time and the amount of 175 Yb solution were studied in order to obtain high labeling efficiency of 175 Yb-EDTMP. The labeling efficiency was obtained by radiochemical purity that was determined by paper chromatography and paper electrophoresis techniques. The optimum labeling condition was obtained at pH 7, 4 mg of EDTMP ligand, 100 µL (105 µg; 0.6 µmol) of 175 Yb solution and 30 minutes incubation time at room temperature. The complex formed was gave maximum labeling efficiency of 98.81 ± 0.15%. Owing to the results, EDTMP ligand can be labeled with 175 Yb radionuclide with labeling efficiency more than 95%. (author)

Structural and superconducting properties of epitaxial Fe{sub 1+y}Se{sub 1-x}Te{sub x} thin films

Energy Technology Data Exchange (ETDEWEB)

Richter, Stefan; Yuan, Feifei; Grinenko, Vadim; Huehne, Ruben [Institute for Metallic Materials, IFW Dresden (Germany); Sala, Alberto; Putti, Marina [Dipartimento di Fisica, Universita di Genova (Italy)

2015-07-01

The iron based superconductor Fe(Se,Te) is in the center of much ongoing research. The reason for this is on the one hand its simple crystal structure, that consists only of stacked Fe(Se,Te) layers so that structural and superconducting properties can be connected more easily, on the other hand FeSe itself shows a high sensibility for strain and changes in stoichiometry and can have potentially very high critical temperatures under hydrostatic pressure or in monolayers. We investigate epitaxial thin films of Fe{sub 1+y}Se{sub 1-x}Te{sub x} grown by pulsed laser deposition on different single crystalline substrates. A high crystalline quality and a superconducting transition of up to about 20 K can be achieved using optimized deposition parameters. The influence of growth conditions, Te-doping, film thickness and post growth oxygen treatment on the structural and superconducting properties on these films will be presented in detail.

Resonance transition array of Yb IV

International Nuclear Information System (INIS)

Kaufman, V.; Sugar, J.

1976-01-01

Nineteen pairs of lines in the wavelength range of 800--1300 A were identified as transitions to the two levels of the ground term of Yb IV, 4f 13 2 F. The 2 F 5 / 2 -- 2 F 7 / 2 interval is 10 214.0 cm -1 with an rms deviation of 0.4 cm -1

Electrodeposition and characterization of CdSe{sub x}Te{sub 1-x} semiconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Benamar, E.; Rami, M.; Fahoume, M.; Chraibi, F.; Ennaoui, A. [Faculty of Sciences, Laboratory of Materials Physics, Dept. of Physics, Rabat (Morocco)

1999-07-01

Thin polycrystalline films of cadmium chalcogenides CdSe{sub x}Te{sub 1-x} (0{<=}x{<=}1) can be used for various technical applications in particular for the conversion of solar energy in photoelectrochemical devices. They have been prepared by electrochemical plating on ITO (indium tin oxide) coated glass substrates from an acid sulfate solution at 90 deg. C. Structural, morphological and compositional studies of the deposited films are reported as a function of the x coefficient. XRD analysis shows that all deposits have a cubic structure with a preferred orientation along the (111) direction. The composition in the films is found to vary linearly with the composition in the solution. The increase in the selenium content x in the CdSe{sub x}Te{sub 1-x} films decreases the lattice constant and increases the band gap. Nevertheless this latter presents a minimum for x = 0.27.

Multiwavelength excitation Raman scattering of Cu2ZnSn(SxSe1−x)4 (0 ≤ x ≤ 1) polycrystalline thin films: Vibrational properties of sulfoselenide solid solutions

International Nuclear Information System (INIS)

Dimitrievska, Mirjana; Xie, Haibing; Fairbrother, Andrew; Fontané, Xavier; Saucedo, Edgardo; Izquierdo-Roca, Victor; Gurieva, Galina; 2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, 08028 Barcelona (Spain))" data-affiliation=" (Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1 2pl., 08930 Sant Adrià del Besòs, Barcelona (Spain); IN2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, 08028 Barcelona (Spain))" >Pérez-Rodríguez, Alejandro; Schorr, Susan

2014-01-01

In this work, Raman spectroscopy and X-ray diffraction were applied together to evaluate the crystal structure and the phonon modes of photovoltaic grade Cu 2 ZnSn(S x Se 1−x ) 4 thin films, leading to a complete characterization of their structural and vibrational properties. Vibrational characterization has been based on Raman scattering measurements performed with different excitation wavelengths and polarization configurations. Analysis of the experimental spectra has permitted identification of 19 peaks, which positions are in good accord with theoretical predictions. Besides, the observation of Cu 2 ZnSnS 4 -like A symmetry peaks related to S vibrations and Cu 2 ZnSnSe 4 -like A symmetry peaks related to Se vibrations, additional Raman peaks, characteristic of the solid solution and previously not reported, are observed, and are attributed to vibrations involving both S and Se anions.

Preparation and characterization of electrodeposited CuInSe{sub 2} thin films; Preparation et caracterisation des couches minces de CuInSe{sub 2} electrodeposees

Energy Technology Data Exchange (ETDEWEB)

Fahoume, M.; Chraibi, F.; Ennaoui, A. [Universite Mohammed 5, Rabat (Morocco). Faculte des Sciences; Fahoume, M.; Aggour, M. [Universite Ibn Tofail, Faculte des Sciences, Kenitra (Morocco)

1998-01-01

CuInSe{sub 2} is one of the most promising materials for use in photoelectrochemical as well in photovoltaic solar cells because of its excellent photoactive properties such as high optical absorption coefficient (10`4-10`5 cm`-`1) and good stability. It has been prepared from an aqueous solution containing CuCl{sub 2}, InCl{sub 3}, H{sub 2}SeO{sub 3} complexed by citrate (Na{sub 3}C{sub 6}H{sub 5}O{sub 7}). The kinetics of electrodeposition has been studied by using the rotating disk electrode method (RDE). X-ray diffraction showed the formation of CuInSe{sub 2} films, of chalcopyrite structure, at potentials ranged between -0.95 V and - 1.12 V (vs. SSE). The composition of the deposited films has been studied by energy dispersive analysis of X-rays (EDAX) and Rutherford backscattering spectroscopy (RBS). From the results, it has been found that stoichiometric chalcopyrite CuInSe{sub 2} has been obtained by controlling both composition, deposition potential, solution temperature and pH. (authors) 16 refs.

Energy transfer processes in Yb{sup 3+}-Tm{sup 3+} co-doped sodium alumino-phosphate glasses with improved 1.8 {mu}m emission

Energy Technology Data Exchange (ETDEWEB)

Camargo, Andrea S S de; Terra, Idelma A A; Nunes, Luiz Antonio de O; Li, M Siu [Instituto de Fisica de Sao Carlos, Universidade de Sao Paulo, 13560-970, Sao Carlos-SP (Brazil)], E-mail: andreasc@ifsc.usp.br

2008-06-25

Sodium alumino-phosphate glasses co-doped with Yb{sup 3+} and Tm{sup 3+} ions have been prepared with notably low OH{sup -} content, and characterized from the viewpoint of their spectroscopic properties. In these glasses, Yb{sup 3+} acts as an efficient sensitizer of excitation energy at 0.98 {mu}m-which can be provided by high power and low cost diode lasers, and subsequently undergoes non-resonant energy transfer to Tm{sup 3+} ions ({sup 2}F{sub 5/2}, {sup 3}H{sub 6} {yields} {sup 2}F{sub 7/2}, {sup 3}H{sub 5}). Through this process, the emitting level {sup 3}F{sub 4} is rapidly populated, generating improved emission at 1.8 {mu}m ({sup 3}F{sub 4} {yields} {sup 3}H{sub 6}). In order to guarantee the efficiency of such favorable energy transfer, energy losses via multiphonon decay, Yb-Yb radiative trapping, and non-radiative transfer to OH{sup -} groups were evaluated, and minimized when possible. The dipole-dipole energy transfer microscopic parameters corresponding to Yb{sup 3+} {yields} Tm{sup 3+}, Yb{sup 3+} {yields} Yb{sup 3+} and Tm{sup 3+} {yields} Tm{sup 3+} transfers, calculated by the Foerster-Dexter model, are C{sub Yb-Tm} = 2.9 x 10{sup -40} cm{sup 6} s{sup -1}, C{sub Yb-Yb} = 42 x 10{sup -40} cm{sup 6} s{sup -1} and C{sub Tm-Tm} = 43 x 10{sup -40} cm{sup 6} s{sup -1}, respectively.

Electrochemical growth and studies of CuInSe2 thin films

International Nuclear Information System (INIS)

Prasher, Dixit; Chandel, Tarun; Rajaram, Poolla

2014-01-01

Thin films of CuInSe 2 were grown on fluorine doped tin oxide (<10 Ω/□) coated glass using the electrodeposition technique. The electrodeposition was carried out potentiostatically using an aqueous bath consisting of solutions of CuCl 2 , InCl 3 and SeO 2 with ethylenediamine-dihydrochloride (EDC) added for complexation. CuInSe 2 films were also deposited without using any complexing agent in the bath. To improve the crystallinity the CuInSe 2 films were annealed in vaccum at 300 °C for one hour. The annealed films were analyzed by x-ray diffraction, transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive analysis of x-rays (EDAX), atomic force microscopy (AFM) and optical spectra. The results obtained in this work show that by adding a suitable complexing agent to the electrochemical bath, nanocrystalline CuInSe 2 , 20 nm to 30 nm in size, can be grown. The composition of the CuInSe 2 films can be controlled by means of the bath composition and stoichiometric films can be obtained for a bath with ionic Cu:In:Se composition close to 1:4:2. AFM micrographs show that the particles are generally oval shaped for near stoichiometric compositions. However for extreme copper rich layers, the morphology is completely different, the particles in this case appearing in the form of nanoflakes. Each flake has a thickness in the nano range, but the surface extends to a length of several microns. (papers)

Raman and Fluorescence Spectroscopy of CeO2, Er2O3, Nd2O3, Tm2O3, Yb2O3, La2O3, and Tb4O7

Directory of Open Access Journals (Sweden)

Jianlan Cui

2015-01-01

Full Text Available To better understand and ascertain the mechanisms of flotation reagent interaction with rare earth (RE minerals, it is necessary to determine the physical and chemical properties of the constituent components. Seven rare earth oxides (CeO2, Er2O3, Nd2O3, Tm2O3, Yb2O3, La2O3, and Tb4O7 that cover the rare earth elements (REEs from light to heavy REEs have been investigated using Raman spectroscopy. Multiple laser sources (wavelengths of 325 nm, 442 nm, 514 nm, and 632.8 nm for the Raman shift ranges from 100 cm−1 to 5000 cm−1 of these excitations were used for each individual rare earth oxide. Raman shifts and fluorescence emission have been identified. Theoretical energy levels for Er, Nd, and Yb were used for the interpretation of fluorescence emission. The experimental results showed good agreement with the theoretical calculation for Er2O3 and Nd2O3. Additional fluorescence emission was observed with Yb2O3 that did not fit the reported energy level diagram. Tb4O7 was observed undergoing laser induced changes during examination.

Synthesis and Characterization of an Earth-Abundant Cu2BaSn(S,Se)4 Chalcogenide for Photoelectrochemical Cell Application.

Science.gov (United States)

Shin, Donghyeop; Ngaboyamahina, Edgard; Zhou, Yihao; Glass, Jeffrey T; Mitzi, David B

2016-11-17

Cu 2 BaSnS 4-x Se x films consisting of earth-abundant metals have been examined for photocathode application. Films with different Se contents (i.e., Cu 2 BaSnS 4-x Se x with x ≤ 2.4) were synthesized using a cosputter system with post-deposition sulfurization/selenization annealing treatments. Each film adopts a trigonal P3 1 crystal structure, with progressively larger lattice constants and with band gaps shifting from 2.0 to 1.6 eV, as more Se substitutes for S in the parent compound Cu 2 BaSnS 4 . Given the suitable bandgap and earth-abundant elements, the Cu 2 BaSnS 4-x Se x films were studied as prospective photocathodes for water splitting. Greater than 6 mA/cm 2 was obtained under illumination at -0.4 V versus reversible hydrogen electrode for Pt/Cu 2 BaSnS 4-x Se x films with ∼60% Se content (i.e., x = 2.4), whereas a bare Cu 2 BaSnS 4-x Se x (x = 2.4) film yielded ∼3 mA/cm 2 at -0.4 V/RHE.

Cs[FeSe{sub 2}], Cs{sub 3}[FeSe{sub 2}]{sub 2}, and Cs{sub 7}[Fe{sub 4}Se{sub 8}]. Missing links of known chalcogenido ferrate series

Energy Technology Data Exchange (ETDEWEB)

Stueble, Pirmin; Roehr, Caroline [Institut fuer Anorganische und Analytische Chemie, Universitaet Freiburg (Germany)

2017-11-17

The three cesium selenido ferrate title compounds with an Se:Fe ratio of 2:1 were synthesized from stoichiometric samples reacting elemental Cs either (A) with Fe and Se in a double-crucible setup (Cs[FeSe{sub 2}], Cs{sub 3}[FeSe{sub 2}]{sub 2}) or (B) with previously prepared FeSe{sub 2} (Cs{sub 3}[FeSe{sub 2}]{sub 2}, Cs{sub 7}[Fe{sub 4}S{sub 8}]) (T{sub max} = 800-1000 C). The pure Fe{sup III} ferrate Cs[FeSe{sub 2}] crystallizes in the Tl[FeSe{sub 2}] type [monoclinic, space group C2/m, a = 1392.95(10), b = 564.43(3), c = 737.44(6) pm, β = 119.163(5) , Z = 4, R{sub 1} = 0.0550]. It is thus not isotypic to all other alkali ferrates(III) A[FeS{sub 2}] and A[FeSe{sub 2}] containing chains of edge-sharing tetrahedra, but crystallizes in a t2 subgroup of the Immm structure of Cs[FeS{sub 2}]. The mixed-valent chain compound Cs{sub 3}[FeSe{sub 2}]{sub 2} is isotypic to its sulfido analogue [orthorhombic, space group Pnma, a = 777.88(6), b = 1151.02(6), c = 1341.61(7) pm, Z = 4, R{sub 1} = 0.0470]. In contrast to the isopunctal Na{sub 3}[FeSe{sub 2}]{sub 2} type K/Rb compounds the chains are only slightly corrugated. The monoclinic, likewise mixed-valent Fe{sup II/III} selenido ferrate Cs{sub 7}[Fe{sub 4}Se{sub 8}] [monoclinic, space group C2/c, a = 1953.79(10), b = 879.71(5), c = 1717.03(10) pm, β = 117.890(2) , Z = 4, R{sub 1} = 0.0816] is isostructural both to the cesium sulfido and tellurido compound. The structure contains oligomeric moieties of four edge sharing [FeSe{sub 4}] tetrahedra forming slightly distorted tetrahedral clusters [Fe{sub 4}Se{sub 8}]{sup 7-}, which are surrounded by a cube of 26 Cs cations. Based on a structure map, the crystal chemistry of the three title compounds is discussed together with all chain/cluster ferrates of the general series A{sub 1+x}[Fe{sup III}{sub 1-x}Fe{sup II}{sub x}Q{sub 2}] (x = 0-1; A = Na, K, Rb, Cs; Q = S, Se, Te). (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Defect study of Cu2ZnSn(SxSe1-x)4 thin film absorbers using photoluminescence and modulated surface photovoltage spectroscopy

Science.gov (United States)

Lin, Xianzhong; Ennaoui, Ahmed; Levcenko, Sergiu; Dittrich, Thomas; Kavalakkatt, Jaison; Kretzschmar, Steffen; Unold, Thomas; Lux-Steiner, Martha Ch.

2015-01-01

Defect states in Cu2ZnSn(SxSe1-x)4 thin films with x = 0.28, 0.36, and 1 were studied by combining photoluminescence (PL) and modulated surface photovoltage (SPV) spectroscopy. A single broad band emission in the PL spectra was observed and can be related to quasi-donor-acceptor pair transitions. The analysis of the temperature dependent quenching of the PL band (x = 0.28, 0.36, and 1) and SPV (x = 0.28) signals resulted in activation energies below 150 meV for PL and about 90 and 300 meV for SPV. Possible intrinsic point defects that might be associated with these observed activation energies are discussed.

Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation

International Nuclear Information System (INIS)

Hua-Jun, Sun; Li-Song, Hou; Yi-Qun, Wu; Xiao-Dong, Tang

2009-01-01

We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge 1 Sb 4 Te 7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude

Nature of Dielectric Properties, Electric Modulus and AC Electrical Conductivity of Nanocrystalline ZnIn2Se4 Thin Films

Science.gov (United States)

El-Nahass, M. M.; Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.

2018-02-01

The structural characteristics of thermally deposited ZnIn2Se4 thin films were indexed utilizing x-ray diffraction as well as scanning electron microscopy techniques. Dielectric properties, electric modulus and AC electrical conductivity of ZnIn2Se4 thin films were examined in the frequency range from 42 Hz to 106 Hz. The capacitance, conductance and impedance were measured at different temperatures. The dielectric constant and dielectric loss decrease with an increase in frequency. The maximum barrier height was determined from the analysis of the dielectric loss depending on the Giuntini model. The real part of the electric modulus revealed a constant maximum value at higher frequencies and the imaginary part of the electric modulus was characterized by the appearance of dielectric relaxation peaks. The AC electrical conductivity obeyed the Jonscher universal power law. Correlated barrier hopping model was the appropriate mechanism for AC conduction in ZnIn2Se4 thin films. Estimation of the density of states at the Fermi level and activation energy, for AC conduction, was carried out based on the temperature dependence of AC electrical conductivity.

Crystal structure, Raman scattering and magnetic properties of CuCr2-xZrxSe4 and CuCr2-xSnxSe4 selenospinels

Science.gov (United States)

Pinto, C.; Galdámez, A.; Barahona, P.; Moris, S.; Peña, O.

2018-06-01

Selenospinels, CuCr2-xMxSe4 (M = Zr and Sn), were synthesized via conventional solid-state reactions. The crystal structure of CuCr1.5Sn0.5Se4, CuCr1.7Sn0.3Se4, CuCr1.5Zr0.5Se4, and CuCr1.8Zr0.2Se4 were determined using single-crystal X-ray diffraction. All the phases crystallized in a cubic spinel-type structure. The chemical compositions of the single-crystals were examined using energy-dispersive X-ray analysis (EDS). Powder X-ray diffraction patterns of CuCr1.3Sn0.7Se4 and CuCr1.7Sn0.3Se4 were consistent with phases belonging to the Fd 3 bar m Space group. An analysis of the vibrational properties on the single-crystals was performed using Raman scattering measurements. The magnetic properties showed a spin glass behavior with increasing Sn content and ferromagnetic order for CuCr1.7Sn0.3Se4.

Dual functional NaYF4:Yb3+, Er3+@NaYF4:Yb3+, Nd3+ core-shell nanoparticles for cell temperature sensing and imaging

Science.gov (United States)

Shi, Zengliang; Duan, Yue; Zhu, Xingjun; Wang, Qiwei; Li, DongDong; Hu, Ke; Feng, Wei; Li, Fuyou; Xu, Chunxiang

2018-03-01

Lanthanide-doped up-conversion nanoparticles (UCNPs) provide a remote temperature sensing approach to monitoring biological microenvironments. In this research, the UCNPs of NaYF4:Yb3+, Er3+@NaYF4:Yb3+, Nd3+ with hexagonal (β)-phase were synthesized and applied in cell temperature sensing as well as imaging after surface modification with meso-2, 3-dimercaptosuccinic acid. In the core-shell UCNPs, Yb3+ ions were introduced as energy transfer media between sensitizers of Nd3+ and activators of Er3+ to improve Er3+emission and prevent their quenching behavior due to multiple energy levels of Nd3+. Under the excitations of 808 nm and 980 nm lasers, the NaYF4:Yb3+, Er3+@NaYF4:Yb3+, Nd3+ nanoparticles exhibited an efficient green band with two emission peaks at 525 nm and 545 nm, respectively, which originated from the transitions of 2H11/2 → 4I15/2 and 4S3/2 → 4I15/2 for Er3+ ions. We demonstrate that an occurrence of good logarithmic linearity exists between the intensity ratio of these two emission peaks and the reciprocal of the inside or outside temperature of NIH-3T3 cells. A better thermal stability is proved through temperature-dependent spectra with a heating-cooling cycle. The obtained viability of NIH-3T3 cells is greater than 90% after incubations of about 12 and 24 (h), and they possess a lower cytotoxicity of UCNPs. This work provides a method for monitoring the cell temperature and its living state from multiple dimensions including temperature response, cell images and visual up-conversion fluorescent color.

Study of structural and optical properties of Cd{sub 1-x}Zn{sub x}Se thin films

Energy Technology Data Exchange (ETDEWEB)

Wahab, L.A., E-mail: aly_lo2003@yahoo.com [National Center for Radiation Research and Technology, Nasr City, Cairo (Egypt); Zayed, H.A. [University Collage of Women for Art, Science and Education, Ain Shams University, Cairo (Egypt); El-Galil, A.A. Abd [National Center for Radiation Research and Technology, Nasr City, Cairo (Egypt)

2012-06-01

Cd{sub 1-x}Zn{sub x}Se (x = 0, 0.5 and 1) thin films have been deposited onto glass substrates using thermal evaporation technique. The lattice constants, grain size, microstrain and dislocation density were studied by using X-ray diffraction. In addition the optical constants were calculated in the wavelength range 400-2500 nm. Transmittance and reflectance were used to calculate the absorption coefficient {alpha} and the optical band gap E{sub g}. The linear relation of ({alpha}h{upsilon}){sup 2} as a function of photon energy h{upsilon} for the thin films illustrated that the films exhibit a direct band gap, which increases with increasing Zn content. This increasing of optical band gap was interpreted in accordance to the increasing in the cohesive energy. Optical constants, such as refractive index n, optical conductivity {sigma}{sub opt}, complex dielectric constant, relaxation time {tau} and dissipation factor tan{delta} were determined. The optical dispersion parameters E{sub 0}, E{sub d} were determined according to Wemple and Di Domenico method. - Highlights: Black-Right-Pointing-Pointer ZnSe thin film has cubic zinc blende structure while CdSe and Cd{sub 0.5}Zn{sub 0.5}Se thin films have hexagonal structure. Black-Right-Pointing-Pointer Grain size of Cd{sub 1-x}Zn{sub x}Se decreases with increasing x (x = 0, 0.5 and 1). Black-Right-Pointing-Pointer Optical band gap increases with increasing x.

Synthesis and characterization of α-NaYF{sub 4}: Yb, Er nanoparticles by reverse microemulsion method

Energy Technology Data Exchange (ETDEWEB)

Gunaseelan, M.; Senthilselvan, J., E-mail: jsselvan@hotmail.com [Department of Nuclear Physics, University of Madras, Chennai, Tamil Nadu (India)

2016-05-06

A simple and cost effective reverse microemulsion system was newly designed to synthesis NaYF{sub 4}:20%Yb,2%Er upconverting luminescent nanoparticles. XRD results confirms the cubic structure of NaYF{sub 4} nanophosphor in the as prepared condition without any other impurity phases. The as-prepared sample itself having highly crystalline nanoparticle with well dispersed uniform morphology is the advantage of this reverse microemulsion process. HRTEM images of as prepared and calcined samples revealed spherical nanoclusters morphology with size of ~210 nm and ~245 nm respectively. The characteristic absorption wavelength that occurs at 980 nm due to transition of energy levels {sup 2}F{sub 5/2} to {sup 2}F{sub 7/2} for Yb{sup 3+} rare earth ion in as prepared and calcined upconversion nanoparticle confirms the presence of Yb{sup 3+} by UV-Visible spectroscopy which can act as a sensitizer for photonic upconversion. Therefore the absorption at NIR region and emission spectrum at visible region suggests that NaYF{sub 4}:20%Yb,2%Er is suitable for upcoversion process, due to its optical property and chemical stability this material also be useful for bio imaging applications.

Near infra red light emitting Y2Sn2O7: Yb-Er nanoparticles

International Nuclear Information System (INIS)

Nigam, Sandeep; Sudarsan, V.; Vatsa, R.K.

2011-01-01

There is an increasing interest in erbium doped nanomaterials host, since they emit in the near-infrared region and are potential candidates for optical telecommunication, high-power and infrared lasers. Further, erbium-ytterbium-co-doped matrices have been particularly investigated as Yb 3+ ions play the role of sensitizers. In the present work, Y 2 Sn 2 O 7 nanoparticles co-doped with lanthanide ions Yb 3+ and Er 3+ were prepared based on the urea hydrolysis of Y 3+ , Sn 4+ , and Ln 3+ in ethylene glycol medium at 150 deg C followed by heating at 700 deg C. As prepared samples are amorphous in nature, and the sample heated at 700 deg C showed well crystalline pyrochlore structure. Based on TEM studies, it has been established that nano-particles are highly crystalline, with size range in the range of 2-5 nm. Luminescence measurements were carried out for the as prepared samples and those heated at 700 deg C. As prepared sampled showed very poor luminescence. However on heating to 700 deg C, strong emission in the NIR region was observed upon UV-excitation as can be seen. The peak observed around 1530 nm has been attributed to 4 I 13/2 → 4 I 15/2 transition of Er 3+ and the peak around 980 nm is due to 2 F 5/2 → 2 F 7/2 transition of Yb 3+ . (author)

Genome-wide analysis of the human Alu Yb-lineage

Directory of Open Access Journals (Sweden)

Carter Anthony B

2004-03-01

Full Text Available Abstract The Alu Yb-lineage is a 'young' primarily human-specific group of short interspersed element (SINE subfamilies that have integrated throughout the human genome. In this study, we have computationally screened the draft sequence of the human genome for Alu Yb-lineage subfamily members present on autosomal chromosomes. A total of 1,733 Yb Alu subfamily members have integrated into human autosomes. The average ages of Yb-lineage subfamilies, Yb7, Yb8 and Yb9, are estimated as 4.81, 2.39 and 2.32 million years, respectively. In order to determine the contribution of the Alu Yb-lineage to human genomic diversity, 1,202 loci were analysed using polymerase chain reaction (PCR-based assays, which amplify the genomic regions containing individual Yb-lineage subfamily members. Approximately 20 per cent of the Yb-lineage Alu elements are polymorphic for insertion presence/absence in the human genome. Fewer than 0.5 per cent of the Yb loci also demonstrate insertions at orthologous positions in non-human primate genomes. Genomic sequencing of these unusual loci demonstrates that each of the orthologous loci from non-human primate genomes contains older Y, Sg and Sx Alu family members that have been altered, through various mechanisms, into Yb8 sequences. These data suggest that Alu Yb-lineage subfamily members are largely restricted to the human genome. The high copy number, level of insertion polymorphism and estimated age indicate that members of the Alu Yb elements will be useful in a wide range of genetic analyses.

Conduction electron spin resonance in the α-Yb1−xFexAlB4 (0 ⩽ x ⩽ 0.50) and α-LuAlB4 compounds

International Nuclear Information System (INIS)

Holanda, L M; Lesseux, G G; Urbano, R R; Rettori, C; Pagliuso, P G; Magnavita, E T; Ribeiro, R A; Nakatsuji, S; Kuga, K; Fisk, Z; Oseroff, S B

2015-01-01

β-YbAlB 4 has become one of the most studied heavy fermion systems since its discovery due to its remarkable physical properties. This system is the first reported Yb-based heavy-fermion superconductor (HFS) for which the low-T superconducting state emerges from a non-fermi-liquid (NFL) normal state associated with quantum criticality Nakatsuji et al 2008 Nature 4 603. Additionally, it presents a striking and unprecedented electron spin resonance (ESR) signal which behaves as a conduction electron spin resonance (CESR) at high temperatures and acquires features of the Yb 3+ local moment ESR at low temperatures. The latter, also named Kondo quasiparticles spin resonance (KQSR), has been defined as a 4f-ce strongly coupled ESR mode that behaves as a local probe of the Kondo quasiparticles in a quantum critical regime, Holanda et al 2011 Phys. Rev. Lett. 107 026402. Interestingly, β-YbAlB 4 possesses a previously known structural variant, namely the α-YbAlB 4 , phase which is a paramagnetic Fermi liquid (FL) at low temperatures Macaluso et al 2007 Chem. Mater. 19 1918. However, it has been recently suggested that the α-YbAlB 4 phase may be tuned to NFL behavior and/or magnetic ordering as the compound is doped with Fe. Here we report ESR studies on the α-Yb 1−x Fe x AlB 4 (0 ⩽ x ⩽ 0.50) series as well as on the reference compound α-LuAlB 4 . For all measured samples, the observed ESR signal behaves as a CESR in the entire temperature range (10 K ≲ T ≲ 300 K) in clear contrast with what has been observed for β-YbAlB 4 . This striking result indicates that the proximity to a quantum critical point is crucial to the occurrence of a KQSR signal. (paper)

Optical properties of YbF3-CaF2 composite thin films deposited by electron-beam evaporation

Science.gov (United States)

Wang, Songlin; Mi, Gaoyuan; Zhang, Jianfu; Yang, Chongmin

2018-03-01

We studied electron-beam evaporated YbF3-CaF2 composite films on ZnS substrate at different deposition parameters. The optical properties of films have been fitted, the surface roughness have been measured by AFM. The results of experiments indicated that increased the refractive indices, extinction coefficients, and surface roughness at higher deposition rate. The refractive index of composite film deposited by electron-beam evaporation with assisted-ion source was obviously higher than it without assisted-ion source.

Constitutive overexpression of the TaNF-YB4 gene in transgenic wheat significantly improves grain yield.

Science.gov (United States)

Yadav, Dinesh; Shavrukov, Yuri; Bazanova, Natalia; Chirkova, Larissa; Borisjuk, Nikolai; Kovalchuk, Nataliya; Ismagul, Ainur; Parent, Boris; Langridge, Peter; Hrmova, Maria; Lopato, Sergiy

2015-11-01

Heterotrimeric nuclear factors Y (NF-Ys) are involved in regulation of various vital functions in all eukaryotic organisms. Although a number of NF-Y subunits have been characterized in model plants, only a few have been functionally evaluated in crops. In this work, a number of genes encoding NF-YB and NF-YC subunits were isolated from drought-tolerant wheat (Triticum aestivum L. cv. RAC875), and the impact of the overexpression of TaNF-YB4 in the Australian wheat cultivar Gladius was investigated. TaNF-YB4 was isolated as a result of two consecutive yeast two-hybrid (Y2H) screens, where ZmNF-YB2a was used as a starting bait. A new NF-YC subunit, designated TaNF-YC15, was isolated in the first Y2H screen and used as bait in a second screen, which identified two wheat NF-YB subunits, TaNF-YB2 and TaNF-YB4. Three-dimensional modelling of a TaNF-YB2/TaNF-YC15 dimer revealed structural determinants that may underlie interaction selectivity. The TaNF-YB4 gene was placed under the control of the strong constitutive polyubiquitin promoter from maize and introduced into wheat by biolistic bombardment. The growth and yield components of several independent transgenic lines with up-regulated levels of TaNF-YB4 were evaluated under well-watered conditions (T1-T3 generations) and under mild drought (T2 generation). Analysis of T2 plants was performed in large deep containers in conditions close to field trials. Under optimal watering conditions, transgenic wheat plants produced significantly more spikes but other yield components did not change. This resulted in a 20-30% increased grain yield compared with untransformed control plants. Under water-limited conditions transgenic lines maintained parity in yield performance. © The Author 2015. Published by Oxford University Press on behalf of the Society for Experimental Biology.

Investigation of Anderson lattice behavior in Yb1-xLuxAl3

International Nuclear Information System (INIS)

Bauer, E.D.; Booth, C.H.; Lawrence, J.M.; Hundley, M.F.; Sarrao, J.L.; Thompson, J.D.; Riseborough, P.S.; Ebihara, T.

2003-01-01

Measurements of magnetic susceptibility χ(T), specific heat C(T), Hall coefficient R H (T), and Yb valence ν = 2 + n f [f-occupation number n f (T) determined from Yb L 3 x-ray absorption measurements] were carried out on single crystals of Yb 1-x Lu x Al 3 . The low temperature anomalies observed in χ(T) and C(T) corresponding to an energy scale T coh ∼ 40 K in the intermediate valence, Kondo lattice compound YbAl 3 are suppressed by Lu concentrations as small as 5% suggesting these low-T anomalies are extremely sensitive to disorder and, therefore, are a true coherence effect. By comparing the temperature dependence of various physical quantities to the predictions of the Anderson Impurity Model, the slow crossover behavior observed in YbAl 3 , in which the data evolve from a low-temperature coherent, Fermi-liquid regime to a high temperature local moment regime more gradually than predicted by the Anderson Impurity Model, appears to evolve to fast crossover behavior at x ∼ 0.7 where the evolution is more rapid than predicted. These two phenomena found in Yb 1-x Lu x Al 3 , i.e., the low-T anomalies and the slow/fast crossover behavior are discussed in relation to recent theories of the Anderson lattice

Spectroscopic properties and energy levels of Yb{sup 3+} ion in huntite structure

Energy Technology Data Exchange (ETDEWEB)

Malakhovskii, A.V. [L.V. Kirensky Institute of Physics, Siberian Branch Russian Academy of Sciences, 660036 Krasnoyarsk (Russian Federation)], E-mail: malakha@iph.krasn.ru; Sukhachev, A.L. [L.V. Kirensky Institute of Physics, Siberian Branch Russian Academy of Sciences, 660036 Krasnoyarsk (Russian Federation); Gnatchenko, S.L.; Kachur, I.S.; Piryatinskaya, V.G. [B. Verkin Institute for Low Temperature Physics and Engineering, National Academy of Sciences of Ukraine, 61103 Kharkov (Ukraine); Temerov, V.L.; Krylov, A.S.; Edelman, I.S. [L.V. Kirensky Institute of Physics, Siberian Branch Russian Academy of Sciences, 660036 Krasnoyarsk (Russian Federation)

2009-05-12

Temperature dependence of Yb{sup 3+} optical absorption spectrum has been studied in crystals Yb{sub x}Tm{sub 1-x}Al{sub 3}(BO{sub 3}){sub 4} (x = 0.1, 0.2 and 1) in the temperature range 1.7-293 K. The spectra of the crystals appeared to be practically identical for the studied ytterbium concentrations. Raman scattering spectrum of YbAl{sub 3}(BO{sub 3}){sub 4} crystal has been measured. Group theory analysis of the optical absorption spectra is made, and new energy structure of the ground and excited states of Yb{sup 3+} ion, based on the experimental data obtained, is presented. Transformation of the local environment of Yb{sup 3+} ion depending on temperature has been found out. Spectrum of luminescence has been calculated from the absorption spectrum by reciprocity method with the use of the proposed energy structure.

1 CW green self-frequency-doubled Yb:YAl3(BO3)4 laser

International Nuclear Information System (INIS)

Dekker, P.; Dawes, J.; Wang, P.; Piper, J.

2000-01-01

Full text: We report 1.1 W continuous wave (CW) green output from a 977nm diode-end-pumped self-frequency-doubled Yb:YAB laser, with a diode-to-green optical conversion efficiency of 10%. Wavelength tunability from 513-546nm has been demonstrated

Influence of dopant concentration on spectroscopic properties of Sr2CeO4:Yb nanocrystals

Science.gov (United States)

Stefanski, M.; Kędziorski, A.; Hreniak, D.; Strek, W.

2017-12-01

Optical properties of Sr2CeO4:Yb nanocrystals synthesized via Pechini's method are reported. The samples were characterized by X-ray diffraction data measurements. The unit cell parameters were determined using Rietveld refinement. It was found that they decreased with increasing amount of Yb ions. The absorption, excitation, emission spectra and luminescence decay profiles of the Sr2CeO4:Yb nanocrystals were investigated. It was observed that optical properties were strongly dependent on Yb concentration. It was found that Yb3+-O2- charge transfer transitions have great influence on the absorption spectra. It can be seen in the emission spectra that in addition to standard bands/lines corresponding to Ce-O metal-to-ligand charge transfer of Sr2CeO4 and f-f transitions of Yb3+, there is emission band centered at 744 nm. Its intensity depends on the concentration of the dopant. Recorded decay times become shorter with increasing dopant concentration due to the Yb3+ concentration quenching. Excitation spectra indicate the energy transfer from Ce-O charge transfer states to Yb3+2F5/2 state. The issue of appearance of down-conversion process in Sr2CeO4:Yb nanocrystals is considered.

Effect of Structural Stress on the Laser Quality of Highly Doped Yb:KY(WO4)2/KY(WO4)2 and Yb:KLu(WO4)2/KLu(WO4)2 Epitaxial Structures

International Nuclear Information System (INIS)

Carvajal, J.; Raghothamachar, B.; Silvestre, O.; Chen, H.; Pujol, M.; Petrov, V.; Dudley, M.; Aguilo, M.; Diaz, F.

2009-01-01

In this communication we demonstrate how the difference in laser performance of two highly doped (20 at %) epitaxial layers of Yb-doped KY(WO4)2 (KYW) grown on a KYW substrate and Yb-doped KLu(WO4)2 (KLuW) grown on a KLuW substrate, respectively, is related to the presence of structural stress in the epilayers, investigated by synchrotron white beam X-ray topography. From the results obtained, it is clear that the samples that show a larger amount of structural stress, Yb:KYW/KYW epitaxies, lead to lower efficiency in laser operation, giving a direct correlation between the existence and magnitude of such structural stress and the loss in efficiency of laser performance in such epitaxial layers which, from a spectroscopical point of view, are otherwise equivalent.

Cold shock protein YB-1 is involved in hypoxia-dependent gene transcription

International Nuclear Information System (INIS)

Rauen, Thomas; Frye, Bjoern C.; Wang, Jialin; Raffetseder, Ute; Alidousty, Christina; En-Nia, Abdelaziz; Floege, Jürgen; Mertens, Peter R.

2016-01-01

Hypoxia-dependent gene regulation is largely orchestrated by hypoxia-inducible factors (HIFs), which associate with defined nucleotide sequences of hypoxia-responsive elements (HREs). Comparison of the regulatory HRE within the 3′ enhancer of the human erythropoietin (EPO) gene with known binding motifs for cold shock protein Y-box (YB) protein-1 yielded strong similarities within the Y-box element and 3′ adjacent sequences. DNA binding assays confirmed YB-1 binding to both, single- and double-stranded HRE templates. Under hypoxia, we observed nuclear shuttling of YB-1 and co-immunoprecipitation assays demonstrated that YB-1 and HIF-1α physically interact with each other. Cellular YB-1 depletion using siRNA significantly induced hypoxia-dependent EPO production at both, promoter and mRNA level. Vice versa, overexpressed YB-1 significantly reduced EPO-HRE-dependent gene transcription, whereas this effect was minor under normoxia. HIF-1α overexpression induced hypoxia-dependent gene transcription through the same element and accordingly, co-expression with YB-1 reduced HIF-1α-mediated EPO induction under hypoxic conditions. Taken together, we identified YB-1 as a novel binding factor for HREs that participates in fine-tuning of the hypoxia transcriptome. - Highlights: • Hypoxia drives nuclear translocation of cold shock protein YB-1. • YB-1 physically interacts with hypoxia-inducible factor (HIF)-1α. • YB-1 binds to the hypoxia-responsive element (HRE) within the erythropoietin (EPO) 3′ enhancer. • YB-1 trans-regulates transcription of hypoxia-dependent genes such as EPO and VEGF.

Unusual antiferromagnetic structure of YbCo{sub 2}Si{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Mufti, N. [Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden (Germany); Department of Physics, State University of Malang, Malang (Indonesia); Kaneko, K. [Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden (Germany); Quantum Beam Science Center, Japan Atomic Energy Agency, Tokai (Japan); Hoser, A. [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Berlin (Germany); Gutmann, M. [ISIS Neutron and Muon Source, Rutherford Appleton Laboratory, Didcot (United Kingdom); Geibel, C.; Stockert, O. [Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden (Germany); Krellner, C. [Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden (Germany); Physikalisches Institut, Goethe-Universitaet Frankfurt, Frankfurt (Germany)

2016-07-01

We report on extensive powder and single crystal neutron diffraction experiments to study the magnetic structure in YbCo{sub 2}Si{sub 2} below the Neel temperature T{sub N} = 1.7 K in detail. Representation analysis has been used to find the possible magnetic structure models compatible with the experiments. Two different magnetically ordered phases can clearly be distinguished. At lowest temperatures a commensurate magnetic structure with a propagation vector k{sub 1} = (0.25 0.25 1) and equal moments or about 1.4 μ{sub B}/Yb is found, while the intermediate phase (T > 0.9 K) is characterized by an incommensurate amplitude-modulated magnetic structure with k{sub 2} = (0.25 0.086 1). The magnetic structure in YbCo{sub 2}Si{sub 2} is in stark contrast to all other compounds of the RCo{sub 2}Si{sub 2} family (R = rare earth element) likely due to some itineracy of the Yb 4f states being responsible for the magnetism.

Microstructure and optical studies of electron beam evaporated ZnSe1−xTex nanocrystalline thin films

International Nuclear Information System (INIS)

Emam-Ismail, M.; El-Hagary, M.; Shaaban, E.R.; Al-Hedeib, A.M.

2012-01-01

Highlights: ► The structural and optical properties of ZnSeTe thin films were studied. ► The micro structural parameters of the films have been determined. ► The room temperature reflectance and transmittance data are analyzed. ► The refractive index and energy gap are determined. ► The single oscillator parameters were calculated. - Abstract: Nanocrystalline thin films of ZnSe 1−x Te x (0.0 ≤ x ≤ 1.0) were deposited on glass substrate using electron beam deposition technique. The structure of the prepared films was examined using X-ray diffraction technique and revealed that the deposited films have polycrystalline zinc blend structure with lattice constant, a, increasing linearly from 0.55816 to 0.59989 nm as x varies from 0 to 1. The optical studies of the nanocrystalline ZnSe 1−x Te x films showed that the refractive index increases and fundamental band gap E g decreases from 2.58 to 2.21 eV as the tellurium concentration increases from 0 to 1. Furthermore, it was also found that the variation of E g with composition shows quadratic behavior with bowing parameter equal to 0.105. In addition, the thickness and annealing effects on the structure and optical properties of the deposited films were also investigated. The refractive index dispersion and its dependence on composition were discussed in terms of single oscillator model proposed by Wemple–DiDomenico.

The tunneling spectra and superconducting gaps observed by using scanning tunneling microscope near the grain-boundary of FeSe0.3Te0.7 films

OpenAIRE

Lin, K. C.; Li, Y. S.; Shen, Y. T.; Wu, M. K.; Chi, C. C.

2013-01-01

We used STM to study the tunneling spectra of FeSe0.3Te0.7 films with two orientations of ab-planes and the connection ramp between them. We have discovered that, using pulse laser deposition (PLD) method, the a- and b-axis of the FeSe0.3Te0.7 film deposited on Ar-ion-milled Magnesium Oxide (MgO) substrate are rotated 45 degree with respect to those of MgO, while the a- and b-axis of the film grown on pristine MgO substrate are parallel to those of MgO. With photolithography and this techniqu...

Magnetic field dependence of the specific heat of heavy-fermion YbCu4.5

International Nuclear Information System (INIS)

Amato, A.; Fisher, R.A.; Phillips, N.E.; Jaccard, D.; Walker, E.

1990-03-01

The specific heat of a polycrystalline sample of YbCu 4.5 has been measured between 0.3 and 20K in magnetic fields to 7T. At zero field a minimum in C/T is observed near 11K. Below that temperature C/T increases and below 0.5K exhibits an upturn ascribed to a hyperfine contribution. The increase in C/T below 11K is reduced by a factor 1.5 for H = 7T, whereas the hyperfine term is enhanced due to the contribution of the 63 Cu and 65 Cu and nuclei. 5 refs., 3 figs

[Study on crystal growth and vibrational spectra of Yb(x) : KY(1-x) (WO4)2].

Science.gov (United States)

Liu, Jing-He; Zhang, Ying; Zhang, Li-Jie; Zeng, Fan-Ming; Wang, Cheng-Wei; Zhang, Xue-Jian

2008-02-01

Yb(x) : KY(1-x)W (x = 0.05)and KYbW crystals were grown by TSSG method. Both of the structure and spectral properties were compared. The condition for the crystal growth is: the rotation rate 10-15 r x min(-1), the pulling speed 1-2 d(-1), the growing period 10-15 d, cooling growing speed 0.05-0.1 degrees C x h(-1), and the cooling speed 20 degrees C x h(-1). X-ray powder diffraction analysis was performed for the crystal powder. They belong to beta-KYW structure with low thermal phase. The cell parameters of the two crystals were calculated, and they are respectively a1 = 1.063 nm, b1 = 1.034 nm, c1 = 0.755 nm, beta1 = 130.75 degrees, Z1 = 4 and a2 = 1.061 nm, b2 = 1.029 nm, c2 = 0.749 nm, beta2 = 130.65 degrees and Z2 = 4. The infrared spectrum and Raman spectrum of crystal were measured. The sample of Yb(x) : KY(1-x) W (x = 0.05) had stronger infrared absorption peaks at 925, 891, 840, 777 and 749 cm(-1), which were caused by stretching vibration. The sample of KYW had stronger infrared absorption peaks at 484 and 437 cm(-1) caused by bending vibration. The vibration modes were analysed and vibrational frequencies of vibratory activity was assigned. The two crystals had strong Raman activity. The vibration of WOOW and WOW exists from 200 to 1000 cm(-1).

Quaternary selenostannates Na{sub 2-x}Ga{sub 2-x}Sn{sub 1+x}Se{sub 6} and AGaSnSe{sub 4} (A=K, Rb, and Cs) through rapid cooling of melts. Kinetics versus thermodynamics in the polymorphism of AGaSnSe{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Hwang, S -J; Iyer, R G; Kanatzidis, M G

2004-10-01

The quaternary alkali-metal gallium selenostannates, Na{sub 2-x}Ga{sub 2-x}Sn{sub 1+x}Se{sub 6} and AGaSnSe{sub 4} (A=K, Rb, and Cs), were synthesized by reacting alkali-metal selenide, Ga, Sn, and Se with a flame melting-rapid cooling method. Na{sub 2-x}Ga{sub 2-x}Sn{sub 1+x}Se{sub 6} crystallizes in the non-centrosymmetric space group C2 with cell constants a=13.308(3) A, b=7.594(2) A, c=13.842(3) A, {beta}=118.730(4) deg., V=1226.7(5) A{sup 3}. {alpha}-KGaSnSe{sub 4} crystallizes in the tetragonal space group I4/mcm with a=8.186(5) A and c=6.403(5) A, V=429.1(5) A{sup 3}. {beta}-KGaSnSe{sub 4} crystallizes in the space group P2{sub 1}/c with cell constants a=7.490(2) A, b=12.578(3) A, c=18.306(5) A, {beta}=98.653(5) deg., V=1705.0(8) A{sup 3}. The unit cell of isostructural RbGaSnSe{sub 4} is a=7.567(2) A, b=12.656(3) A, c=18.277(4) A, {beta}=95.924(4) deg., V=1741.1(7) A{sup 3}. CsGaSnSe{sub 4} crystallizes in the orthorhombic space group Pmcn with a=7.679(2) A, b=12.655(3) A, c=18.278(5) A, V=1776.1(8) A{sup 3}. The structure of Na{sub 2-x}Ga{sub 2-x}Sn{sub 1+x}Se{sub 6} consists of a polar three-dimensional network of trimeric (Sn,Ga){sub 3}Se{sub 9} units with Na atoms located in tunnels. The AGaSnSe{sub 4} possess layered structures. The compounds show nearly the same Raman spectral features, except for Na{sub 2-x}Ga{sub 2-x}Sn{sub 1+x}Se{sub 6}. Optical band gaps, determined from UV-Vis spectroscopy, range from 1.50 eV in Na{sub 2-x}Ga{sub 2-x}Sn{sub 1+x}Se{sub 6} to 1.97 eV in CsGaSnSe{sub 4}. Cooling of the melts of KGaSnSe{sub 4} and RbGaSnSe{sub 4} produces only kinetically stable products. The thermodynamically stable product is accessible under extended annealing, which leads to the so-called {gamma}-form (BaGa{sub 2}S{sub 4}-type) of these compounds.

Laser induced broad band anti-Stokes white emission from LiYbF4 nanocrystals

Institute of Scientific and Technical Information of China (English)

L. Marciniak; R. Tomala; M. Stefanski; D. Hreniak; W. Strek

2016-01-01

Spectroscopic properties of tetragonal LiYbF4 nanocrystals under high dense NIR excitation at vacuum condition were in-vestigated. White, broad band emission covering whole visible part of the spectrum from LiYbF4 nanocrystals was observed. Its in-tensity strongly depended on the excitation power, excitation wavelength and ambient pressure. Temperature of the nanocrystals un-der 975 nm excitation was determined as a function of excitation power. Strong photo-induced current was observed from LiYbF4 pallet. The emission kinetic was analyzed. The mechanism of the anti-Stokes white emission was discussed in terms of the la-ser-induced charge transfer emission from Yb2+ states.

SrAu{sub 4.76}In{sub 1.24} with YbMo{sub 2}Al{sub 4}-type structure

Energy Technology Data Exchange (ETDEWEB)

Muts, Ihor [Ivan Franko National Univ., Lviv (Ukraine). Inorganic Chemistry Dept.; Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Matar, Samir F. [CNRS, Univ. de Bordeaux, Pessac (France). ICMCB; Rodewald, Ute C.; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Zaremba, Vasyl' I. [Ivan Franko National Univ., Lviv (Ukraine). Inorganic Chemistry Dept.

2011-10-15

The gold-rich intermetallic compound SrAu{sub 4.76}In{sub 1.24} was synthesized by high-frequence-melting of the elements in a sealed tantalum tube and subsequent annealing. The structure was refined from single-crystal X-ray diffraction data: YbMo{sub 2}Al{sub 4}-type, I4/mmm, Z = 2, a = 718.77(7), c = 552.79(9) pm, wR2 = 0.0760, 149 F{sup 2} values and 11 parameters. The 4d (0.62 In + 0.38 Au) Wyckoff position shows mixed occupancy leading to the composition SrAu{sub 4.76}In{sub 1.24} for the investigated crystal. The strontium atoms are located in a large cage built up by 12 Au + 8 In atoms. The gold and indium atoms show segregation into substructures. The striking structural motifs are Au4 squares (278 pm Au-Au) and indium chains (276 pm In-In). The squares and chains are connected via weaker Au-Au (299 pm) and Au-In (295 pm) bonds to a three-dimensional network. The In chains show the motif of rod packing. Electronic structure calculations show anisotropy within the structure with different responses to compressions along In-In chains and Au planes, also illustrated by the electron localization contour plots. The metallic behavior is found to be of itinerant electron type (like Cu), and the chemical bonding includes stabilizing Au-In interactions. (orig.)

Cathodic electrodeposition of CuInSe sub 2 thin films

Energy Technology Data Exchange (ETDEWEB)

Guillen, C; Galiano, E; Herrero, J [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

1991-01-01

In order to study the preparation process of CuInSe{sub 2} thin films by a one-step electrodeposition method, thin films of the compound were prepared from aqueous citric acid (C{sub 6}H{sub 8}O{sub 7} . H{sub 2}O) plating baths onto titanium substrates. During electrodeposition, the bath composition and deposition potential were changed to obtain stoichiometric thin films. In general, close to stoichiometry, layers rich in selenium were observed, and this excess of selenium was removed after heat treatment. Best quality films were obtained after annealing at 400deg C during 15 min. X-ray diffraction showed the formation of CuInSe{sub 2} films, the chalcopyrite structure, at heating treatment temperatures higher than 350deg C. Optical measurements showed that the band gap of the deposited material was 0.99 eV. (orig.).

Cooperative down-conversion of UV light in disordered scheelitelike Yb-doped NaGd(MoO4)2 and NaLa(MoO4)2 crystals

Science.gov (United States)

Subbotin, K. A.; Osipova, Yu. N.; Lis, D. A.; Smirnov, V. A.; Zharikov, E. V.; Shcherbakov, I. A.

2017-07-01

Concentration series of disordered scheelitelike Yb:NaGd(MoO4)2 and Yb:NaLa(MoO4)2 single crystals are grown by the Czochralski method. The actual concentrations of Yb3+ ions in the crystals are determined by optical-absorption spectroscopy. The luminescence of Yb3+ ions in these crystals in the region of 1 μm is studied under UV and IR excitation. In the case of UV excitation, this luminescence appears as a result of nonradiative excited state energy transfer from donor centers of unknown nature to ytterbium. The character of the concentration dependence of Yb3+ luminescence indicates that the energy transfer at high Yb concentrations occurs with active participation of a cooperative mechanism, according to which the excitation energy of one donor center is transferred simultaneously to two Yb3+ ions. In other words, the quantum yield of this transfer exceeds unity, which can be used to increase the efficiency of crystalline silicon (c-Si) solar cells.

AgSbSe{sub 2} and AgSb(S,Se){sub 2} thin films for photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Garza, J.G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Shaji, S. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Facultad de Ingenieria Mecanica y Electrica, CIIDIT - Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Rodriguez, A.C.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Facultad de Ingenieria Mecanica y Electrica, CIIDIT - Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

2011-10-01

Silver antimony selenide (AgSbSe{sub 2}) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb{sub 2}S{sub 3}), silver selenide (Ag{sub 2}Se), selenium (Se) and silver (Ag). Sb{sub 2}S{sub 3} thin film was prepared from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}, Ag{sub 2}Se from a solution containing AgNO{sub 3} and Na{sub 2}SeSO{sub 3} and Se thin films from an acidified solution of Na{sub 2}SeSO{sub 3}, at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 deg. C in vacuum (10{sup -3} Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe{sub 2} or AgSb(S,Se){sub 2} depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe{sub 2}/Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V{sub oc} = 435 mV and J{sub sc} = 0.08 mA/cm{sup 2} under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe{sub 2} as an absorber material by a non-toxic selenization process is achieved.

Bifunctional NaYF4:Er3+/Yb3+ submicron rods, implemented in quantum dot sensitized solar cell(Conference Presentation)

Science.gov (United States)

Guerrero, J. Pablo; Cerdán Pasarán, Andrea; López-Luke, Tzarara; Ramachari, D.; Esparza, Diego; De la Rosa Cruz, Elder; Romero Arellano, Victor Hugo

2016-09-01

In this work are presented the results obtained with solar cells sensitized with quantum dots of cadmium sulphide (CdS) incorporating luminescent materials (NaYF4:Yb/Er). The study revealed that through using a bifunctional layer of NaYF4:Yb/Er submicron rods, the infrared radiation is absorbed in 980nm to generate luminescence in the visible region to 530nm, under the UP-conversion process, in the same way simultaneously, NaYF4:Yb/Er layer causes scattering toward the quantum dots, the emission and scattering generated by this material is reabsorbed by the QD-CdS, and these in turn are absorbing in its range of solar radiation absorption, Thus generates an increase in the electron injection into the semiconductor of TiO2. The results of a cell incorporating NaYF4: Yb/Er at 0.07M shown photoconversion efficiencies of 3.39% improving efficiency with respect to the reference solar cell without using NaYF4: Yb/Er of 1.99%. The obtained values of current and voltage showed a strong dependence of the percentage of NaYF4 Yb/Er, and the mechanism of incorporation of this material.

Composition and performance of thin film CdSe electrodeposited from selenosulfite solution

International Nuclear Information System (INIS)

Szabo, J.P.; Simms, D.; Cocivera, M.

1985-01-01

Cathodic electrodeposition of thin film CdSe from aqueous selenosulfite solution has been studied as function of solution composition and electrode potential. The Cd/Se ratio has been analyzed using polarography and Rutherford backscattering spectroscopy. Polarography gives a compostion averaged over the whole film (2cm 2 ) while RBS gives local surface composition (1 mm 2 ). The average Cd/Se ratio is 1.1, but some variation was found to occur across the surface of film (0.82 to 1.2)

Nanoscale observation of surface potential and carrier transport in Cu2ZnSn(S,Se)4 thin films grown by sputtering-based two-step process.

Science.gov (United States)

Kim, Gee Yeong; Kim, Ju Ri; Jo, William; Son, Dae-Ho; Kim, Dae-Hwan; Kang, Jin-Kyu

2014-01-08

Stacked precursors of Cu-Zn-Sn-S were grown by radio frequency sputtering and annealed in a furnace with Se metals to form thin-film solar cell materials of Cu2ZnSn(S,Se)4 (CZTSSe). The samples have different absorber layer thickness of 1 to 2 μm and show conversion efficiencies up to 8.06%. Conductive atomic force microscopy and Kelvin probe force microscopy were used to explore the local electrical properties of the surface of CZTSSe thin films. The high-efficiency CZTSSe thin film exhibits significantly positive bending of surface potential around the grain boundaries. Dominant current paths along the grain boundaries are also observed. The surface electrical parameters of potential and current lead to potential solar cell applications using CZTSSe thin films, which may be an alternative choice of Cu(In,Ga)Se2.PACS number: 08.37.-d; 61.72.Mm; 71.35.-y.

Strength, stiffness, and microstructure of Cu(In,Ga)Se2 thin films deposited via sputtering and co-evaporation

International Nuclear Information System (INIS)

Luo, Shi; Jang, Dongchan; Greer, Julia R.; Lee, Jiun-Haw; Liu, Chee-Wee; Shieh, Jia-Min; Shen, Chang-Hong; Wu, Tsung-Ta

2014-01-01

This work examines Cu(In,Ga)Se 2 thin films fabricated by (1) selenization of pre-sputtered Cu-In-Ga and (2) co-evaporation of each constituent. The efficiency disparity between films deposited via these two methods is linked to differences in morphology and microstructure. Atomic force microscopy and scanning electron microscopy show that selenized films have rougher surfaces and poor adhesion to molybdenum back contact. Transmission electron microscopy and electron energy loss spectroscopy revealed multiple voids near the Mo layer in selenized films and a depletion of Na and Se around the voids. Residual stresses in co-evaporated films were found to be ∼1.23 GPa using wafer curvature measurements. Uniaxial compression experiments on 500 nm-diameter nanopillars carved out from co-evaporated films revealed the elastic modulus of 70.4 ± 6.5 GPa. Hertzian contact model applied to nanoindentation data on selenized films revealed the indentation modulus of 68.9 ± 12.4 GPa, which is in agreement with previous reports. This equivalence of the elastic moduli suggests that microstructural differences manifest themselves after the yield point. Typical plastic behavior with two distinct failure modes is observed in the extracted stress-strain results, with the yield strength of 640.9 ± 13.7 MPa for pillars that failed by shearing and 1100.8 ± 77.8 MPa for pillars that failed by shattering.

Electrical and photovoltaic characteristics of CuInSe2 thin films processed by nontoxic Cu–In precursor solutions

International Nuclear Information System (INIS)

Choi, Ik Jin; Jang, Jin Woo; Lee, Seung Min; Yeon, Deuk Ho; Jo, Yeon Hwa; Lee, Myung Ho; Cho, Yong Soo; Yun, Jae Ho; Yoon, Kyung Hoon

2013-01-01

Nontoxic Cu–In solution-processed CuInSe 2 absorber thin films and resultant photovoltaic cells have been investigated. Acetate-based Cu–In precursors having different Cu/In ratios of 0.8–1.2 were deposited by spin-coating and then selenized in Se atmosphere up to 550 °C. Single tetragonal CuInSe 2 phase was dominantly obtained regardless of Cu/In ratios, with the segregation of Cu 2−x Se secondary phase only in the case of Cu-rich films as evidenced by Raman spectra. The films with the 1.1 ratio demonstrated a larger grain size of ∼1.06 µm with an increased carrier concentration of ∼1.7 × 10 18 cm −3 and a decreased band gap of ∼1.02 eV, compared to the values obtained for Cu-deficient absorber films. The resultant best cell efficiency was ∼3.1% for the absorber having the 1.1 ratio, suggesting a potential of this simple spin-coating method as an alternative to typical vacuum processes. (paper)

YB-1 promotes microtubule assembly in vitro through interaction with tubulin and microtubules

Directory of Open Access Journals (Sweden)

Baconnais Sonia

2008-09-01

Full Text Available Abstract Background YB-1 is a major regulator of gene expression in eukaryotic cells. In addition to its role in transcription, YB-1 plays a key role in translation and stabilization of mRNAs. Results We show here that YB-1 interacts with tubulin and microtubules and stimulates microtubule assembly in vitro. High resolution imaging via electron and atomic force microscopy revealed that microtubules assembled in the presence of YB-1 exhibited a normal single wall ultrastructure and indicated that YB-1 most probably coats the outer microtubule wall. Furthermore, we found that YB-1 also promotes the assembly of MAPs-tubulin and subtilisin-treated tubulin. Finally, we demonstrated that tubulin interferes with RNA:YB-1 complexes. Conclusion These results suggest that YB-1 may regulate microtubule assembly in vivo and that its interaction with tubulin may contribute to the control of mRNA translation.

Complexing in the system Rb2SeO4-UO2SeO4-H2O

International Nuclear Information System (INIS)

Kuchumova, N.V.; Shtokova, I.P.; Serezhkina, L.B.; Serezhkin, V.N.

1989-01-01

Method of isothermal solubility at 25 deg C is used to study interaction of rubidium and uranyl selenates in aqueous solution. Formation of congruently soluble Rb 2 UO 2 (SeO 4 ) 2 x2H 2 O and Rb 2 (UO 2 ) 2 x(SeO 4 ) 3 x6H 2 O is stated. For the last compound crystallographic characteristics (a=10.668; b=14.935(9); c=13.891(7) A; β=104.94(1); Z=4, sp.gr. P2 1 /c) are determined. Thermal decomposition of a compound results in formation of Rb 2 U 2 O 7

Simulation of 4f-5d transitions of Yb2+ in potassium and sodium halides

International Nuclear Information System (INIS)

Duan Changkui; Tanner, P A

2008-01-01

The free ion energy level parameters of Yb 2+ are obtained by fitting the 4f 13 5d Yb 2+ free ion energy levels. A model is proposed for scaling these parameters so that they are appropriate for Yb 2+ in crystals. Treating the scaling factor, the barycenter energy E exc of the 4f 13 5d configuration, and the crystal-field splitting parameter B 4 (dd) as free parameters and adopting the 4f crystal-field parameters of the 4f 13 configuration Yb 3+ ion in other hosts with the same ligands, the absorption spectra of Yb 2+ in MX (M = K, Na; X = F, Cl, Br, I) hosts are well simulated. A model is proposed for taking the effect of charge compensation into account and this shows that the inclusion of charge compensation effects does not significantly alter the calculated electronic absorption spectra but may considerably change the dynamics of the system

Local structure investigation of Ga and Yb dopants in Co4Sb12 skutterudites

Science.gov (United States)

Hu, Yanyun; Chen, Ning; Clancy, J. P.; Salvador, James R.; Kim, Chang-Yong; Shi, Xiaoya; Li, Qiang; Kim, Young-June

2017-12-01

We report comprehensive x-ray absorption spectroscopy studies at both the Ga K edge and Yb L2 edge to elucidate the local structure of Ga and Yb dopants in YbxGayCo4Sb12 . Our extended x-ray absorption fine structure (EXAFS) data confirm that Ga atoms occupy two crystallographic sites: one is the 24 g site replacing Sb, and the other is the 2 a site in the off-center void position. We find that the occupancy ratio of these two sites varies significantly as a function of the filling fraction of additional Yb, which exclusively occupies the 2 a on-center site. At low concentrations of Yb, Ga24 g and Ga2 a dopants coexist and they form a charge-compensated compound defect proposed by Qiu et al. [Adv. Funct. Mater. 23, 3194 (2013), 10.1002/adfm.201202571]. The Ga24 g occupancy increases gradually with increasing Yb concentration, and almost all Ga occupies the 24 g site for the highest Yb concentration studied (x =0.4 ). In addition to the local structural evidence provided by our EXAFS data, we also present x-ray absorption near-edge structure (XANES) spectra, which show a small Ga K -edge energy shift as a function of Yb concentration consistent with the change from predominantly Ga2 a to Ga24 g states. Our result suggests that the increased solubility of Yb in Yb-Ga co-doped Co4Sb12 skutterudites is due to the increased Ga24 g electron acceptor, and thus provides an important strategy to optimize the carrier concentration in partially filled skutterudites.

Refractive index extraction and thickness optimization of Cu2ZnSnSe4 thin film solar cells

NARCIS (Netherlands)

ElAnzeery, H.; El Daif, O.; Buffière, M.; Oueslati, S.; Ben Messaoud, K.; Agten, D.; Brammertz, G.; Guindi, R.; Kniknie, B.; Meuris, M.; Poortmans, J.

2015-01-01

Cu2nSnSe4 (CZTSe) thin film solar cells are promising emergent photovoltaic technologies based on low-bandgap absorber layer with high absorption coefficient. To reduce optical losses in such devices and thus improve their efficiency, numerical simulations of CZTSe solar cells optical

Reduction of Kondo lattice effects in Yb1-xLuxAl3 observed by soft x-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Yamaguchi, J; Sekiyama, A; Imada, S; Yamasaki, A; Tsunekawa, M; Muro, T; Ebihara, T; Onuki, Y; Suga, S

2007-01-01

We have carried out the bulk-sensitive and high-resolution soft x-ray photoelectron spectroscopy on Lu substituted intermediate-valence compound Yb 1-x Lu x Al 3 (x = 0.4) at temperatures from 200 to 20 K. The temperature dependences of the bulk Yb 4f photoelectron spectra revealed in our preceding works on high purity YbAl 3 have not been observed in this Lu substituted system. The temperature dependences of the bulk Yb 4f peak positions and the Yb valence in this system can be well reproduced by the single impurity Anderson model (SIAM), whereas the spectral behaviors in YbAl 3 were not at all reproduced by the SIAM. These results confirm the importance of the Kondo lattice effects for YbAl 3 , for which the coherent lattice periodicity plays essential roles

Imaging the electron-boson coupling in superconducting FeSe films using a scanning tunneling microscope.

Science.gov (United States)

Song, Can-Li; Wang, Yi-Lin; Jiang, Ye-Ping; Li, Zhi; Wang, Lili; He, Ke; Chen, Xi; Hoffman, Jennifer E; Ma, Xu-Cun; Xue, Qi-Kun

2014-02-07

Scanning tunneling spectroscopy has been used to reveal signatures of a bosonic mode in the local quasiparticle density of states of superconducting FeSe films. The mode appears below Tc as a "dip-hump" feature at energy Ω∼4.7kBTc beyond the superconducting gap Δ. Spectra on strained regions of the FeSe films reveal simultaneous decreases in Δ and Ω. This contrasts with all previous reports on other high-Tc superconductors, where Δ locally anticorrelates with Ω. A local strong coupling model is found to reconcile the discrepancy well, and to provide a unified picture of the electron-boson coupling in unconventional superconductors.

Wavelengths, classifications, and ionization energies in the isoelectronic sequences from Yb II and Yb III through Bi XV and Bi XVI

International Nuclear Information System (INIS)

Kaufman, V.; Sugar, J.

1976-01-01

Spectral observations are reported for transitions to the ground term and first excited term of the one-electron configurations in the 4f/sup 14/5p 6 nl isoelectronic sequence from Yb II through Bi XV. Resonance lines are reported for the isoelectronic sequence Yb III through Bi XVI in which the ground state is 4f/sup 14/5p 6 1 S 0 and the upper levels are the J = 1 levels of the 4f/sup 13/5p 6 nd, 4f/sup 14/5p 5 nd, and 4f/sup 14/5p 5 ns configurations. The wavelengths fall in the range 70--3700 A. The spectra were produced by means of sliding and triggered spark discharges and photographed with 10.7 m normal and grazing incidence spectrographs. The data in the Yb III sequence demonstrate the crossing of binding energies of the 4f and 5p shells at W VII. Rydberg series terms were found in a sufficient number of cases to provide extrapolation curves through Bi XV and Bi XVI. These data enabled us to calculate ionization energies for each of these ions with an uncertainty of approx.1% or better

Preparation of SnSe thin films by encapsulated selenization

International Nuclear Information System (INIS)

Sabar D. Hutagalung; Samsudi Sakrani; Yussof Wahab

1994-01-01

Tin selenide thin films were prepared by encapsulated selenization. A stacked layer of evaporated Sn and Se films were annealed in a carbon block at temperatures 100 - 500 degree Celsius for 3 hours. X-ray analysis and SEM (Scanning electron) micrograph results showed that SnSe was initially formed at 150 degree Celsius with crystal size 30.0 nm and reached optimum formation at 200 daximum of 57.4 % yield of 5-decene. Other factors such as reaction temperatures, types of solvent and wt% of rhenium loadings influence the activity of the catalytic system

Annotation Method (AM): SE7_AM1 [Metabolonote[Archive

Lifescience Database Archive (English)

Full Text Available base search. Peaks with no hit to these databases are then selected to secondary se...arch using exactMassDB and Pep1000 databases. After the database search processes, each database hits are ma...SE7_AM1 PowerGet annotation A1 In annotation process, KEGG, KNApSAcK and LipidMAPS are used for primary data

Down-conversion luminescence from (Ce, Yb) co-doped oxygen-rich silicon oxides

International Nuclear Information System (INIS)

Heng, C. L.; Wang, T.; Su, W. Y.; Wu, H. C.; Yin, P. G.; Finstad, T. G.

2016-01-01

We have studied down-conversion photoluminescence (PL) from (Ce, Yb) co-doped “oxygen rich” silicon oxide films prepared by sputtering and annealing. The Ce"3"+ ∼510 nm PL is sensitive to the Ce concentration of the films and is much stronger for 3 at. % Ce than for 2 at. % Ce after annealing at 1200 °C. The PL emission and excitation spectroscopy results indicate that the excitation of Yb"3"+ is mainly through an energy transfer from Ce"3"+ to Yb"3"+, oxide defects also play a role in the excitation of Yb"3"+ after lower temperature (∼800 °C) annealing. The Ce"3"+ 510 nm photon excites mostly only one Yb"3"+ 980 nm photon. Temperature-dependent PL measurements suggest that the energy transfer from Ce"3"+ to Yb"3"+ is partly thermally activated.

Lanthanide ion (III) complexes of 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraaminophosphonate (DOTA-4AmP8−) for dual biosensing of pH with CEST (chemical exchange saturation transfer) and BIRDS (biosensor imaging of redundant deviation in shifts)

Science.gov (United States)

Huang, Yuegao; Coman, Daniel; Ali, Meser M.; Hyder, Fahmeed

2014-01-01

Relaxivity based magnetic resonance of phosphonated ligands chelated with gadolinium (Gd3+) shows promise for pH imaging. However instead of monitoring the paramagnetic effect of lanthanide complexes on the relaxivity of water protons, biosensor (or molecular) imaging with magnetic resonance is also possible by detecting either the non-exchangeable or the exchangeable protons on the lanthanide complexes themselves. The non-exchangeable protons (e.g., –CHx, where 3≥x≥1) are detected using a three-dimensional chemical shift imaging method called Biosensor Imaging of Redundant Deviation in Shifts (BIRDS), whereas the exchangeable protons (e.g., –OH or –NHy, where 2≥y≥1) are measured with Chemical Exchange Saturation Transfer (CEST) contrast. Here we tested the feasibility of BIRDS and CEST for pH imaging of 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraaminophosphonate (DOTA-4AmP8−) chelated with thulium (Tm3+) and ytterbium (Yb3+). BIRDS and CEST experiments show that both complexes are responsive to pH and temperature changes. Higher pH and temperature sensitivities are obtained with BIRDS for either complex when using the chemical shift difference between two proton resonances vs. using the chemical shift of a single proton resonance, thereby eliminating the need to use water resonance as reference. While CEST contrast for both agents is linearly dependent on pH within a relatively large range (i.e., 6.3-7.9), much stronger CEST contrast is obtained with YbDOTA-4AmP5− than with TmDOTA-4AmP5−. In addition, we demonstrate the prospect of using BIRDS to calibrate CEST as new platform for quantitative pH imaging. PMID:24801742

Strength, stiffness, and microstructure of Cu(In,Ga)Se{sub 2} thin films deposited via sputtering and co-evaporation

Energy Technology Data Exchange (ETDEWEB)

Luo, Shi; Jang, Dongchan; Greer, Julia R., E-mail: jrgreer@caltech.edu [Division of Applied Science and Engineering, California Institute of Technology, 1200 E California Blvd., Pasadena, California 91125 (United States); Lee, Jiun-Haw [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, No. 1, Sec 4 Roosevelt, Taipei 10617, Taiwan (China); Liu, Chee-Wee [Department of Electrical Engineering, National Taiwan University, No 1, Sec 4 Roosevelt, Taipei 10617, Taiwan (China); Shieh, Jia-Min; Shen, Chang-Hong; Wu, Tsung-Ta [National Nano Device Laboratories, Hsinchu Science Park, No. 26, Prosperity Road I, Hsinchu 30078, Taiwan (China)

2014-07-07

This work examines Cu(In,Ga)Se{sub 2} thin films fabricated by (1) selenization of pre-sputtered Cu-In-Ga and (2) co-evaporation of each constituent. The efficiency disparity between films deposited via these two methods is linked to differences in morphology and microstructure. Atomic force microscopy and scanning electron microscopy show that selenized films have rougher surfaces and poor adhesion to molybdenum back contact. Transmission electron microscopy and electron energy loss spectroscopy revealed multiple voids near the Mo layer in selenized films and a depletion of Na and Se around the voids. Residual stresses in co-evaporated films were found to be ∼1.23 GPa using wafer curvature measurements. Uniaxial compression experiments on 500 nm-diameter nanopillars carved out from co-evaporated films revealed the elastic modulus of 70.4 ± 6.5 GPa. Hertzian contact model applied to nanoindentation data on selenized films revealed the indentation modulus of 68.9 ± 12.4 GPa, which is in agreement with previous reports. This equivalence of the elastic moduli suggests that microstructural differences manifest themselves after the yield point. Typical plastic behavior with two distinct failure modes is observed in the extracted stress-strain results, with the yield strength of 640.9 ± 13.7 MPa for pillars that failed by shearing and 1100.8 ± 77.8 MPa for pillars that failed by shattering.

Lanthanide ion (III) complexes of 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraaminophosphonate for dual biosensing of pH with chemical exchange saturation transfer (CEST) and biosensor imaging of redundant deviation in shifts (BIRDS).

Science.gov (United States)

Huang, Yuegao; Coman, Daniel; Ali, Meser M; Hyder, Fahmeed

2015-01-01

Relaxivity-based magnetic resonance of phosphonated ligands chelated with gadolinium (Gd(3+)) shows promise for pH imaging. However instead of monitoring the paramagnetic effect of lanthanide complexes on the relaxivity of water protons, biosensor (or molecular) imaging with magnetic resonance is also possible by detecting either the nonexchangeable or the exchangeable protons on the lanthanide complexes themselves. The nonexchangeable protons (e.g. -CHx, where 3 ≥ x ≥ 1) are detected using a three-dimensional chemical shift imaging method called biosensor imaging of redundant deviation in shifts (BIRDS), whereas the exchangeable protons (e.g. -OH or -NHy , where 2 ≥ y ≥ 1) are measured with chemical exchange saturation transfer (CEST) contrast. Here we tested the feasibility of BIRDS and CEST for pH imaging of 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraaminophosphonate (DOTA-4AmP(8-)) chelated with thulium (Tm(3+) ) and ytterbium (Yb(3+)). BIRDS and CEST experiments show that both complexes are responsive to pH and temperature changes. Higher pH and temperature sensitivities are obtained with BIRDS for either complex when using the chemical shift difference between two proton resonances vs using the chemical shift of a single proton resonance, thereby eliminating the need to use water resonance as reference. While CEST contrast for both agents is linearly dependent on pH within a relatively large range (i.e. 6.3-7.9), much stronger CEST contrast is obtained with YbDOTA-4AmP(5-) than with TmDOTA-4AmP(5-). In addition, we demonstrate the prospect of using BIRDS to calibrate CEST as new platform for quantitative pH imaging. Copyright © 2014 John Wiley & Sons, Ltd.

Tunable multicolor and white-light upconversion luminescence in Yb3+/Tm3+/Ho3+ tri-doped NaYF4 micro-crystals.

Science.gov (United States)

Lin, Hao; Xu, Dekang; Teng, Dongdong; Yang, Shenghong; Zhang, Yueli

2015-09-01

NaYF4 micro-crystals with various concentrations of Yb(3+) /Tm(3+) /Ho(3+) were prepared successfully via a simple and reproducible hydrothermal route using EDTA as the chelating agent. Their phase structure and surface morphology were studied using powder X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD patterns revealed that all the samples were pure hexagonal phase NaYF4. SEM images showed that Yb(3+)/Tm(3+)/Ho(3+) tri-doped NaYF4 were hexagonal micro-prisms. Upconversion photoluminescence spectra of Yb(3+)/Tm(3+)/Ho(3+) tri-doped NaYF4 micro-crystals with various dopant concentrations under 980 nm excitation with a 665 mW pump power were studied. Tunable multicolor (purple, purplish blue, yellowish green, green) and white light were achieved by simply adjusting the Ho(3+) concentration in 20%Yb(3+)/1%Tm(3+)/xHo(3+) tri-doped NaYF4 micro-crystals. Furthermore, white-light emissions could be obtained using different pump powers in 20%Yb(3+)/1%Tm(3+)/1%Ho(3+) tri-doped NaYF4 micro-crystals at 980 nm excitation. The pump power-dependent intensity relationship was studied and relevant energy transfer processes were discussed in detail. The results suggest that Yb(3+)/Tm(3+) Ho(3+) tri-doped NaYF4 micro-crystals have potential applications in optoelectronic devices such as photovoltaic, plasma display panel and white-light-emitting diodes. Copyright © 2014 John Wiley & Sons, Ltd.

YB-1 expression promotes epithelial-to-mesenchymal transition in prostate cancer that is inhibited by a small molecule fisetin

Science.gov (United States)

Khan, Mohammad Imran; Adhami, Vaqar Mustafa; Lall, Rahul Kumar; Sechi, Mario; Joshi, Dinesh C.; Haidar, Omar M.; Syed, Deeba Nadeem; Siddiqui, Imtiaz Ahmad; Chiu, Shing-Yan; Mukhtar, Hasan

2014-01-01

Epithelial-to-mesenchymal transition (EMT) plays an important role in prostate cancer (PCa) metastasis. The transcription/translation regulatory Y-box binding protein-1 (YB-1) is known to be associated with cancer metastasis. We observed that YB-1 expression increased with tumor grade and showed an inverse relationship with E-cadherin in a human PCa tissue array. Forced YB-1 expression induced a mesenchymal morphology that was associated with down regulation of epithelial markers. Silencing of YB-1 reversed mesenchymal features and decreased cell proliferation, migration and invasion in PCa cells. YB-1 is activated directly via Akt mediated phosphorylation at Ser102 within the cold shock domain (CSD). We next identified fisetin as an inhibitor of YB-1 activation. Computational docking and molecular dynamics suggested that fisetin binds on the residues from β1 - β4 strands of CSD, hindering Akt's interaction with YB-1. Calculated free binding energy ranged from −11.9845 to −9.6273 kcal/mol. Plasmon Surface Resonance studies showed that fisetin binds to YB-1 with an affinity of approximately 35 μM, with both slow association and dissociation. Fisetin also inhibited EGF induced YB-1 phosphorylation and markers of EMT both in vitro and in vivo. Collectively our data suggest that YB-1 induces EMT in PCa and identify fisetin as an inhibitor of its activation. PMID:24770864

Efficient continuous-wave and passively Q-switched pulse laser operations in a diffusion-bonded sapphire/Er:Yb:YAl3(BO3)4/sapphire composite crystal around 1.55 μm.

Science.gov (United States)

Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

2018-01-08

A composite crystal consisting of a 1.5-mm-thick Er:Yb:YAl 3 (BO 3 ) 4 crystal between two 1.2-mm-thick sapphire crystals was fabricated by the thermal diffusion bonding technique. Compared with a lone Er:Yb:YAl 3 (BO 3 ) 4 crystal measured under the identical experimental conditions, higher laser performances were demonstrated in the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal due to the reduction of the thermal effects. End-pumped by a 976 nm laser diode in a hemispherical cavity, a 1.55 μm continuous-wave laser with a maximum output power of 1.75 W and a slope efficiency of 36% was obtained in the composite crystal when the incident pump power was 6.54 W. Passively Q-switched by a Co 2+ :MgAl 2 O 4 crystal, a 1.52 μm pulse laser with energy of 10 μJ and repetition frequency of 105 kHz was also realized in the composite crystal. Pulse width was 315 ns. The results show that the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal is an excellent active element for 1.55 μm laser.

Study of sub band gap absorption of Sn doped CdSe thin films

International Nuclear Information System (INIS)

Kaur, Jagdish; Rani, Mamta; Tripathi, S. K.

2014-01-01

The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively

Study of sub band gap absorption of Sn doped CdSe thin films

Energy Technology Data Exchange (ETDEWEB)

Kaur, Jagdish; Rani, Mamta [Department of Physics, Panjab University, Chandigarh- 160014 (India); Tripathi, S. K., E-mail: surya@pu.ac.in [Centre of Advanced Study in Physics, Panjab University, Chandigarh- 160014 (India)

2014-04-24

The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively.

Substitution studies of Mn and Fe in Ln{sub 6}W{sub 4}Al{sub 43} (Ln=Gd, Yb) and the structure of Yb{sub 6}Ti{sub 4}Al{sub 43}

Energy Technology Data Exchange (ETDEWEB)

Treadwell, LaRico J.; Watkins-Curry, Pilanda [Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803 (United States); Department of Chemistry, University of Texas at Dallas, Richardson, TX 75080 (United States); McAlpin, Jacob D. [Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803 (United States); Prestigiacomo, Joseph; Stadler, Shane [Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803 (United States); Chan, Julia Y., E-mail: Julia.Chan@utdallas.edu [Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803 (United States); Department of Chemistry, University of Texas at Dallas, Richardson, TX 75080 (United States)

2014-02-15

The synthesis and characterization of Mn- and Fe-substituted Ln{sub 6}W{sub 4}Al{sub 43} (Ln=Gd, Yb) and Yb{sub 6}Ti{sub 4}Al{sub 43} are reported. The compounds adopt the Ho{sub 6}Mo{sub 4}Al{sub 43} structure type with lattice parameters of a∼11 Å and c∼17.8 Å with structural site preferences for Mn and Fe. The magnetization of Yb{sub 6}W{sub 4}Al{sub 43} is sensitive to Mn and Fe doping, which is evident by an increase in the field dependent magnetization. Gd{sub 6}W{sub 4}Al{sub 43}, Gd{sub 6}W{sub 4}Al{sub 42.31(11)}Mn{sub 0.69(11)}, and Gd{sub 6}W{sub 4}Al{sub 41.69(12)}Fe{sub 1.30(12)} order antiferromagnetically in the ab- and c-directions at 15, 14, and 13 K, respectively, with positive Weiss constants, suggesting the presence of ferromagnetic exchange interactions. Anisotropic magnetization data of Gd{sub 6}W{sub 4}Al{sub 43−y}T{sub y} (T=Mn, Fe) analogs are discussed. - Graphical abstract: The magnetic susceptibility of Ln{sub 6}W{sub 4−x}Al{sub 43−y}T{sub x+y} (Ln = Gd, Yb; T= Mn, Fe). Display Omitted - Highlights: • Single crystals of Ln{sub 6}W{sub 4−x}Al{sub 43−y}T{sub x+y} were grown with Al-flux. • Anisotropic magnetic behavior were determined on single crystals. • Gd{sub 6}W{sub 4−x}Al{sub 43−y}T{sub x+y} (T=Mn, Fe) analogs order antiferromagnetically.

Deposition and characterization of graded Cu(In{sub 1-x}Ga{sub x})Se{sub 2} thin films by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Babu, B.J. [Department of Electrical Engineering-SEES, CINVESTAV-IPN, Avenida IPN 2508, San Pedro Zacatenco, D.F. C.P 07360 (Mexico); Institute of Molecules and Materials, UMR-CNRS 6283, Université du Maine, Avenue O. Messiaen, F-72085 Le Mans (France); Velumani, S., E-mail: velu@cinvestav.mx [Department of Electrical Engineering-SEES, CINVESTAV-IPN, Avenida IPN 2508, San Pedro Zacatenco, D.F. C.P 07360 (Mexico); College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kassiba, A. [Institute of Molecules and Materials, UMR-CNRS 6283, Université du Maine, Avenue O. Messiaen, F-72085 Le Mans (France); Asomoza, R. [Department of Electrical Engineering-SEES, CINVESTAV-IPN, Avenida IPN 2508, San Pedro Zacatenco, D.F. C.P 07360 (Mexico); Chavez-Carvayar, J.A. [Instituto Investigaciones en Materiales-UNAM, Ciudad Universitario, D.F.Mexico (Mexico); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2015-07-15

Cu(In{sub 1-x}Ga{sub x})Se{sub 2} (CIGS) thin films and their graded (x = 1 to 0) layer were grown on soda lime glass substrates using chemical spray pyrolysis (CSP) at different substrate temperatures (T{sub s}). After optimization of T{sub s}, depositions were carried out at different gallium composition (x) at optimized temperature of 350 °C. All the films deposited at T{sub s} ≥ 350 °C were polycrystalline chalcopyrite structure, with a preferential orientation of (112), including the graded layer. With increase in x, lattice parameters a and c were observed to decrease. Line scan of the CIGS layer showed intersection of gallium and indium concentrations, revealing the graded nature of the film. Composition dependence of Raman peak for CuInSe{sub 2} (CIS) deposited by CSP was analyzed. Optical transmittance at a wavelength of 800 nm of the film with x = 0 (CIS) (30%) was found lower than that of the film grown with x = 0.82 (CIGS) (50%). Cusp-shape of the resistivity was observed with an increase of x leading to steep rise in resistivity of the films (1.61–71.68 Ω-cm) till x = 0.42 and then decreased to 4.78 Ω-cm at x = 0.82. Carrier concentrations of the films were evaluated in the order of 10{sup 16}–10{sup 19} cm{sup −3} with p-type conductivity. These results indicate that graded CIGS thin films with modulated gallium composition can be prepared by CSP. - Graphical abstract: Display Omitted - Highlights: • Optimization of the spray deposition system for device grade chalcopyrite CIGS films. • Optimized substrate temperature to obtain single-phase CIGS by spray deposition. • Detailed report on compositional dependence of CuInSe{sub 2} (CIS) thin films. • Systematic analysis of the influence of Ga in CIS by spray deposition. • Bowing parameter is extracted from the experiment values.

Direct comparison of Yb3+-doped LiYF4 and LiLuF4 as laser media at room-temperature

International Nuclear Information System (INIS)

Yin, J G; Hang, Y; He, X M; Zhang, L H; Zhao, C C; Gong, J; Zhang, P X

2012-01-01

We present an extensive comparative analysis on the growth, the spectroscopic features, and the laser performances of room temperature Yb(5%):LiYF 4 (YLF) and Yb(5%):LiLuF 4 (LLF) crystals in the same conditions. The gain cross section, fluorescence lifetimes, laser thresholds and laser slope efficiencies are compared for the first time. It appears that Yb 3+ -doped LLF crystal might be more promising for diode-pumped high power laser operation

Y-box-binding protein-1 (YB-1) promotes cell proliferation, adhesion and drug resistance in diffuse large B-cell lymphoma

Energy Technology Data Exchange (ETDEWEB)

Miao, Xiaobing; Wu, Yaxun [Department of Pathology, Affiliated Cancer Hospital of Nantong University, Nantong 226361, Jiangsu (China); Wang, Yuchan [Department of Pathogen, Medical College, Nantong University, Nantong 226001, Jiangsu (China); Jiangsu Province Key Laboratory for Inflammation and Molecular Drug Target, Nantong University, Nantong 226001, Jiangsu (China); Zhu, Xinghua; Yin, Haibing [Department of Pathology, Affiliated Cancer Hospital of Nantong University, Nantong 226361, Jiangsu (China); He, Yunhua [Jiangsu Province Key Laboratory for Inflammation and Molecular Drug Target, Nantong University, Nantong 226001, Jiangsu (China); Li, Chunsun; Liu, Yushan; Lu, Xiaoyun; Chen, Yali; Shen, Rong [Department of Pathology, Affiliated Cancer Hospital of Nantong University, Nantong 226361, Jiangsu (China); Xu, Xiaohong, E-mail: xuxiaohongnantong@126.com [Department of Oncology, Affiliated Cancer Hospital of Nantong University, Nantong 226361, Jiangsu (China); He, Song, E-mail: hesongnt@126.com [Department of Pathology, Affiliated Cancer Hospital of Nantong University, Nantong 226361, Jiangsu (China)

2016-08-15

YB-1 is a multifunctional protein, which has been shown to correlate with resistance to treatment of various tumor types. This study investigated the expression and biologic function of YB-1 in diffuse large B-cell lymphoma (DLBCL). Immunohistochemical analysis showed that the expression statuses of YB-1 and pYB-1{sup S102} were reversely correlated with the clinical outcomes of DLBCL patients. In addition, we found that YB-1 could promote the proliferation of DLBCL cells by accelerating the G1/S transition. Ectopic expression of YB-1 could markedly increase the expression of cell cycle regulators cyclin D1 and cyclin E. Furthermore, we found that adhesion of DLBCL cells to fibronectin (FN) could increase YB-1 phosphorylation at Ser102 and pYB-1{sup S102} nuclear translocation. In addition, overexpression of YB-1 could increase the adhesion of DLBCL cells to FN. Intriguingly, we found that YB-1 overexpression could confer drug resistance through cell-adhesion dependent and independent mechanisms in DLBCL. Silencing of YB-1 could sensitize DLBCL cells to mitoxantrone and overcome cell adhesion-mediated drug resistance (CAM-DR) phenotype in an AKT-dependent manner. - Highlights: • The expression statuses of YB-1 and pYB-1{sup S102} are reversely correlated with outcomes of DLBCL patients. • YB-1 promotes cell proliferation by accelerating G1/S transition in DLBCL. • YB-1 confers drug resistance to mitoxantrone in DLBCL.

Ab-initio study of pure sup 7 sup 7 Se and sup 1 sup 2 sup 5 Te systems and of the sup 7 sup 7 Se nuclear quadrupole interaction in tellurium

CERN Document Server

Oh, Y K; Cho, H S

1999-01-01

Using the Hartree-Fock cluster procedure, we have studied the electric-field gradient tensors at the nuclear sites of sup 7 sup 7 Se and sup 1 sup 2 sup 5 Te in pure sup 1 sup 2 sup 5 Te systems and in tellurium crystalline system's with a sup 7 sup 7 Se impurity. From the results for the pure systems, sup 7 sup 7 Se in selenium and sup 1 sup 2 sup 5 Te in tellurium, using the observed quadrupole moments: Q( sup 7 sup 7 Se) 0.75 +- 0.07 barns and Q( sup 1 sup 2 sup 5 Te) = 0.35 +- 0.04 barns. Comparison is made with earlier values obtained by different methods. Using our calculated values of Q and the results of a study of the field-gradient tensors for sup 7 sup 7 Se in tellurium, the theoretical values of the quadrupole coupling constants are found to agree, within about 7 percent, with experiment. The calculated asymmetry parameters are also found to be in reasonable agreement with the experiment values, although the agreement not as close as in the case of the quadrupole -coupling constants. Directions fo...

Structural, morphological and optical properties of pulsed laser deposited ZnSe/ZnSeO3 thin films

Science.gov (United States)

Hassan, Syed Ali; Bashir, Shazia; Zehra, Khushboo; Salman Ahmed, Qazi

2018-04-01

The effect of varying laser pulses on structural, morphological and optical behavior of Pulsed Laser Deposited (PLD) ZnSe/ZnSeO3 thin films has been investigated. The films were grown by employing Excimer laser (100 mJ, 248 nm, 18 ns, 30 Hz) at various number of laser pulses i.e. 3000, 4000, 5000 and 6000 with elevated substrate temperature of 300 °C. One film was grown at Room Temperature (RT) by employing 3000 number of laser pulses. In order to investigate the structural analysis of deposited films, XRD analysis was performed. It was observed that the room temperature is not favorable for the growth of crystalline film. However, elevated substrate temperature to 300°C, two phases with preferred orientation of ZnSeO3 (2 1 2) and ZnSe (3 3 1) were identified. AFM and SEM analysis were performed to explore the surface morphology of grown films. Morphological analysis also confirmed the non-uniform film growth at room temperature. At elevated substrate temperature (300 °C), the growth of dendritic rods and cubical crystalline structures are observed for lower number of laser pulses i.e. 3000 and 4000 respectively. With increased number of pulses i.e. 5000 and 6000, the films surface morphology becomes smooth which is confirmed by measurement of surface RMS roughness. Number of grains, skewness, kurtosis and other parameters have been evaluated by statistical analysis. In order to investigate the thickness, and optical properties of deposited films, ellipsometery and UV–Vis spectroscopy techniques were employed. The estimated band gap energy is 2.67 eV for the film grown at RT, whereas band gap values varies from 2.80 eV to 3.01 eV for the films grown at 300 °C with increasing number of laser pulses.

Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films

Science.gov (United States)

Hassanien, A. S.; Akl, Alaa A.

2016-01-01

Compositional dependence of optical and electrical properties of chalcogenide CdSxSe1-x (0.4 ≥ x ≥ 0.0 at. %) thin films was studied. Cadmium sulphoselenide films were deposited by thermal evaporation technique at vacuum (8.2 × 10-4 Pa) onto preheated glass substrates (523 K). The evaporation rate and film thickness were kept constant at 2.50 nm/s and 375 ± 5 nm, respectively. X-ray diffractograms showed that, the deposited films have the low crystalline nature. Energy dispersive analysis by X-ray (EDAX) was used to check the compositional elements of deposited films. The absorption coefficient was determined from transmission and reflection measurements at room temperature in the wavelength range 300-2500 nm. Optical density, skin depth, optical energy gap and Urbach's parameters of CdSSe thin films have also been estimated. The direct optical energy gap decreased from 2.248 eV to 1.749 eV when the ratio of Se-content was increased from 0.60 to 1.00 . Conduction band and valance band positions were evaluated. The temperature dependence of dc-electrical resistivity in the temperature range (293-450 K) has been reported. Three conduction regions due to different conduction mechanisms were detected. Electrical sheet resistance, activation energy and pre-exponential parameters were discussed. The estimated values of optical and electrical parameters were strongly dependent upon the Se-content in CdSSe matrix.

Fabrication of Cu{sub 2}ZnSn(S{sub x}Se{sub 1−x}){sub 4} solar cells by ethanol-ammonium solution process

Energy Technology Data Exchange (ETDEWEB)

Xue, Cong; Li, Jianmin; Wang, Yaguang; Jiang, Guoshun; Weifeng, Liu, E-mail: liuwf@ustc.edu.cn; Zhu, Changfei, E-mail: cfzhu@ustc.edu.cn

2016-10-15

Highlights: • The CBD precipitates were utilized to fabricate the CZTS/CZTSSe solar cells. • A solvent mixture of ethanol and ammonium hydroxide was used to form SnS-Cu2O-ZnS slurry. • Formation of CZTS/CZTSSe with good crystalline quality confirmed by XRD and Raman spectra. • CZTS and CZTSSe thin film solar cells obtained the best PCE of 1.99% and 2.95%, respectively. - Abstract: In this paper, Cu{sub 2}ZnSn(S{sub x}Se{sub 1−x}){sub 4} precursor films were produced by doctor blade process from SnS-Cu{sub 2}O-ZnS slurry. To prepare the slurry, SnS, ZnS and Cu{sub 2}O precipitates, which are outgrowths of stacked layer ZnS/Cu/SnS by CBD (chemical bath deposition)-annealing route, were dissolved in the mixture solvent of ethanol and NH{sub 3}·H{sub 2}O. Synthesized precursor films were then annealed at different conditions. The post-annealed films were characterized by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman measurements and UV–vis–NIR spectroscopy. SEM studies reveal that the rough and relatively compact absorber thin films are obtained via the sulfidation and sulfidation-selenization processes. X-ray diffraction and Raman spectrum results verify that the obtained films are composed of Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSnSe{sub 4} phases, which have high absorbance in visible range and direct band gap energy of 1.01–1.47 eV. The best devices yield total area power conversion efficiency of 1.99% and 2.95% corresponding to Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSn(S{sub x}Se{sub 1−x}){sub 4} thin film solar cells under AM1.5 illumination without any anti-reflection layer.

High PEC conversion efficiencies from CuSe film electrodes modified with metalloporphyrin/polyethylene matrices

International Nuclear Information System (INIS)

Zyoud, Ahed; Al-Kerm, Rola S.; Al-Kerm, Rana S.; Waseem, Mansur; Mohammed, H.S. Helal; Park, DaeHoon; Campet, Guy; Sabli, Nordin; Hilal, Hikmat S.

2015-01-01

Enhancement of hole-transfer across CuSe electrode/liquid junction can be facilitated by coating with metalloporphyrin complexes embedded inside polyethylene matrices. - Highlights: • CuSe films were electrochemically deposited onto FTO/Glass • Annealing CuSe film electrodes enhanced PEC characteristics • PEC characteristics were further enhanced by metalloporphyrin/polyethylene matrices, yielding ∼15% efficiency • Matrix behavior as charge transfer mediator enhanced electrode conversion efficiency and stability - Abstract: Electrodeposited CuSe film electrodes have been prepared onto FTO/glass by a facile method based on earlier methods described for other systems. The films were characterized, modified by annealing and further characterized. The films were then modified by coating with tetra(-4-pyridyl) pophyrinato-manganese (MnTPyP) complexes embedded inside commercial polyethylene (PE) matrices. The effects of modifications on different film properties, such as X-ray diffraction (XRD) patterns, surface morphology, photoluminescence (PL) spectra and electronic absorption spectra were investigated. Compared with other thin film electrode systems, very high photoelectrochemical (PEC) conversion efficiency values have been observed here. Pre-annealing the CuSe films at 150°C for 2 h, followed by attaching the MnTPyP/PE matrices remarkably enhanced their PEC characteristics. The conversion efficiency was significantly enhanced, from less than 1.0% to more than 15%. Fill factor (FF) was also enhanced from ∼30% to ∼80%. Values of open-circuit potential (V OC ) and short-circuit current (J SC ) were significantly enhanced. While annealing affects uniformity, particle inter-connection and surface texture of the CuSe films, the MnTPyP complex species behaves as an additional charge-transfer mediator across the film/electrolyte junction. Optimization of PEC characteristics, using different deposition times, different annealing temperatures, different

Luminescence study of ZnSe/PVA (polyvinyl alcohol) composite film

Energy Technology Data Exchange (ETDEWEB)

Lahariya, Vikas [Amity School of Applied Science, Amity University Haryana Panchgaon, Manesar, Haryana 122413 (India)

2016-05-06

The ZnSe nanocrystals have been prepared into poly vinyl alcohol(PVA) polymer matrix on glass using ZnCl2 and Na2SeSO3 as zinc and selenium source respectively. Poly vinyl Alcohol (PVA) used as polymer matrix cum capping agent due to their high viscosity and water solubility. It is transparent for visible region and prevents Se- ions to photo oxidation. The ZnSe/PVA composite film was deposited on glass substrate. The film was characterized by X Ray Diffraction (XRD) and UV-Visible absorption Spectroscopy and Photoluminescence. The X Ray Diffraction (XRD) study confirms the nanometer size (10 nm) particle formation within PVA matrix with cubic zinc blend crystal structure. The UV-Visible Absorption spectrum of ZnSe/PVA composite film shown blue shift in absorption edge indicating increased band gap due to quantum confinement. The calculated energy band gap from the absorption edge using Tauc relation is 3.4 eV. From the Photoluminescence study a broad peak at 435 nm has been observed in violet blue region due to recombination of surface states.

Photoelectrochemical (PEC) studies on CdSe thin films ...

Indian Academy of Sciences (India)

TECS

Thin films of CdSe were deposited by potentiostatic mode on different substrates such as ... trodeposited from aqueous acidic baths, but very few ... washed with liquid detergent (labolene) followed by ul- .... increases the ionic mobilities and hence the conductivity ... A PEC cell of configuration, CdSe/1 M polysulphide/.

Ferromagnetic correlations in Yb based heavy fermions probed by NMR relaxation: YbNi{sub 4}P{sub 2} vs. Yb(Rh,Ir){sub 2}Si{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Baenitz, M.; Sarkar, R.; Khuntia, P.; Krellner, C.; Geibel, C.; Steglich, F. [Max - Planck Institute of Chemical Physics of Solids, 01187 Dresden, Germany (Germany)

2012-07-01

Intersite correlations in Ce-based heavy fermion systems close to the quantum critical point separating the magnetic ordered state from the paramagnetic Kondo lattice are in almost all cases predominantly antiferromagnetic (AFM) in nature. The NMR relaxation of these systems show an evolution from localized fluctuations with 1/T{sub 1} nearly constant above the Kondo temperature T{sub K}, to a linear in T Korringa- like behavior with a constant and enhanced (1/T{sub 1}T)- value below T{sub K}. We report on {sup 31}P-NMR results on the ferromagnetic (FM) quantum critical system YbNi{sub 4}P{sub 2} over a wide range in temperature (2-300 K) and field (0.2 - 9 T). Here, {sup 31}(1/T{sub 1}T)(T) does not show such a signature at T{sub K}, instead a continuous increase of (1/T{sub 1}T) down to lowest T is observed. A similar behavior has been reported for YbRh{sub 2}Si{sub 2}, which also exhibits strong FM correlations evidenced by {sup 29}Si - NMR and an enhanced Wilson ratio. Furthermore, in CeFePO, which is likely unique among Ce-based quantum critical system because of its strong FM correlations, (1/T{sub 1}T) also diverges continuously for T {yields}0. This suggests that the difference in the relaxation between most of the Ce systems and the Yb systems is predominantly related to a change from AFM to FM intersite correlations. NMR-results (shift, line width, T{sub 1}) are analyzed and discussed in different models (Korringa, Moriya).

Phonon and thermal properties of exfoliated TaSe2 thin films

International Nuclear Information System (INIS)

Yan, Z.; Jiang, C.; Renteria, J.; Pope, T. R.; Tsang, C. F.; Stickney, J. L.; Salguero, T. T.; Goli, P.; Balandin, A. A.

2013-01-01

We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe 2 ) obtained via the “graphene-like” mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E 2g peak of TaSe 2 presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A 1g and E 2g , are −0.013 and −0.0097 cm −1 / o C, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ∼16 W/mK to ∼9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe 2 channels shows that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe 2 and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials

Phonon and thermal properties of exfoliated TaSe2 thin films

Science.gov (United States)

Yan, Z.; Jiang, C.; Pope, T. R.; Tsang, C. F.; Stickney, J. L.; Goli, P.; Renteria, J.; Salguero, T. T.; Balandin, A. A.

2013-11-01

We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe2) obtained via the "graphene-like" mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E2g peak of TaSe2 presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A1g and E2g, are -0.013 and -0.0097 cm-1/oC, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ˜16 W/mK to ˜9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe2 channels shows that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe2 and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials.

Highly efficient upconversion luminescence in hexagonal NaYF4:Yb3+, Er3+ nanocrystals synthesized by a novel reverse microemulsion method

Science.gov (United States)

Gunaseelan, M.; Yamini, S.; Kumar, G. A.; Senthilselvan, J.

2018-01-01

A new reverse microemulsion system is proposed for the first time to synthesize NaYF4:Yb,Er nanocrystals, which demonstrated high upconversion emission in 550 and 662 nm at 980 nm diode laser excitation. The reverse microemulsion (μEs) system is comprised of CTAB and oleic acid as surfactant and 1-butanol co-surfactant and isooctane oil phase. The surfactant to water ratio is able to tune the microemulsion droplet size from 14 to 220 nm, which eventually controls the crystallinity and particulate morphology of NaYF4:Yb,Er. Also, the microemulsion precursor and calcination temperature plays certain role in transforming the cubic NaYF4:Yb,Er to highly luminescent hexagonal crystal structured upconversion material. Single phase hexagonal NaYF4:YbEr nanorod prepared by water-in-oil reverse microemulsion (μEs) gives intense red upconversion emission. Both nanosphere and nanorod shaped NaYF4:Yb,Er was obtained, but nanorod morphology resulted an enhanced upconversion luminescence. The structural, morphological, thermal and optical luminescence properties of the NaYF4:Yb,Er nanoparticles are discussed in detail by employing powder X-ray diffraction, dynamic light scattering, high resolution electron microscopy, TGA-DTA, UV-DRS, FTIR and photoluminescence spectroscopy. Intense upconversion emission achieved in the microemulsion synthesized NaYF4:Yb3+,Er3+ nanocrystal can make it as useful optical phosphor for solar cell applications.

Investigation on the structural changes of ZnO:Er:Yb thin film during laser annealing to fabricate a transparent conducting upconverter

Energy Technology Data Exchange (ETDEWEB)

Lluscà, Marta, E-mail: marta.llusca@gmail.com [Department of Applied Physics, Universitat de Barcelona, 08028 Barcelona (Spain); Future Industries Institute, University of South Australia, Mawson Lakes, 5095 South Australia (Australia); López-Vidrier, Julian [Department of Electronics, Universitat de Barcelona, 08028 Barcelona (Spain); IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg (Germany); Lauzurica, Sara; Canteli, David; Sánchez-Aniorte, Maria I.; Molpeceres, Carlos [Centro Láser, Universidad Politécnica de Madrid, 28031 Madrid (Spain); Antony, Aldrin [Department of Applied Physics, Universitat de Barcelona, 08028 Barcelona (Spain); Indian Institute of Technology Bombay, 400076 Mumbai (India); Hernández, Sergi [Department of Electronics, Universitat de Barcelona, 08028 Barcelona (Spain); Alcobé, Xavier [Unitat de Difracció de Raigs X, Centres Científics i Tecnològics, Universitat de Barcelona, 08028 Barcelona (Spain); Garrido, Blas [Department of Electronics, Universitat de Barcelona, 08028 Barcelona (Spain); Bertomeu, Joan [Department of Applied Physics, Universitat de Barcelona, 08028 Barcelona (Spain)

2017-05-15

A transparent and conducting ZnO:Er:Yb thin film with upconversion properties has been achieved after being annealed with continuous laser radiation just before the ablation point of the material. This work demonstrates that the laser energy preserves the conductivity of the film and at the same time creates an adequate surrounding for Er and Yb to produce visible upconversion at 660, 560, 520, and 480 nm under 980 nm laser excitation. The relation between the structural, electrical and upconversion properties is discussed. It is observed that the laser energy melts part of the material, which recrystallizes creating rare earth oxides and two different wurtzite structures, one with substitutional rare earths and oxygen vacancies (responsible for the conductivity) and the other without substitutional rare earth ions (responsible for the upconversion emission).

Influence of Yb{sup 3+} on the structural, dielectric and magnetic properties of Mg{sub 0.7}Co{sub 0.3}Fe{sub 2}O{sub 4} nanocrystallites synthesized via co-precipitation route

Energy Technology Data Exchange (ETDEWEB)

Ejaz, Muhammad [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur 63100 (Pakistan); Mahmood, Azhar [Department of Chemistry, The Islamia University of Bahawalpur, Bahawalpur 63100 (Pakistan); Khan, Muhammad Azhar, E-mail: azhar.khan@iub.edu.pk [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur 63100 (Pakistan); Hussain, Altaf [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur 63100 (Pakistan); Sultan, Amber [Quaid-e-Azam Medical College, Bahawalpur 63100 (Pakistan); Mahmood, Asif [College of Engineering, Department of Chemical Engineering, King Saud University, Riyadh (Saudi Arabia); Chughtai, Adeel Hussain; Ashiq, Muhammad Naeem [Institute of Chemical Sciences, Bahauddin Zakaryia University, Multan 60800 (Pakistan); Warsi, Muhammad Farooq, E-mail: farooq.warsi@iub.edu.pk [Department of Chemistry, The Islamia University of Bahawalpur, Bahawalpur 63100 (Pakistan); Shakir, Imran [Sustainable Energy Technologies (SET) center, College of Engineering, King Saud University, PO-BOX 800, Riyadh 11421 (Saudi Arabia)

2016-04-15

A series of nanostructured ferrites having chemical composition Mg{sub 0.7}Co{sub 0.3}Yb{sub x}Fe{sub 2−x}O{sub 4} (x=0.0–0.08) was prepared by the chemical co-precipitation route. The synthesized samples were characterized by X-ray diffraction (XRD), Thermo-gravimetric analysis (TGA), differential thermal analysis (DTA), vibrating sample magnetometer (VSM) and impedance analyzer. The analysis of XRD patterns confirmed the spinel structure and the crystallite size calculated by Scherer's formula was found in the range of 18–43 nm. The crystallite size was small enough to obtain considerable signal to noise ratio in the recording media. The lattice constant was increased from 8.362 Ǻ to 8.383 Ǻ as the Yb contents were increased in the magnesium-cobalt ferrites. The TGA and DTA were carried out for prepared sample to investigate the thermal decomposition process. Magnetization results obtained from VSM measurements elucidate that the substitution of rare earth ytterbium decreased the saturation magnetization and retentivity. The dielectric properties of the samples were studied at room temperature in the frequency range of 1 MHz to 3 GHz and the samples exhibited the dispersion in high frequency region. The dielectric constant (ε) and dielectric loss (tan δ) were decreased with the increased frequency and ytterbium doping. The dielectric parameters were explained on the basis of space charge distribution. The dielectric and magnetic parameters suggested that these nano-materials are potential candidates for switching and recording media applications. - Graphical abstract: Mg{sub 0.7}Co{sub 0.3}Yb{sub x}Fe{sub 2−x}O{sub 4} nanostructured spinel ferrites were prepared by chemical co-precipitation technique. The crystallite size was found in the range 18–43 nm. The substitutions of rare earth ytterbium decrease the saturation magnetization and retentivity. The dielectric parameters were explained on the basis of space charge distribution. The

Effect of the ITO substrate on the growth of Cu(In,Ga)Se{sub 2}, CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8} and CuIn{sub 3}Se{sub 5} thin films by flash evaporation

Energy Technology Data Exchange (ETDEWEB)

Friedrich, E J; Merino, J M; Leon, M [Department of Applied Physics, Universidad Autonoma de Madrid (UAM), Cantoblanco, 28049 Madrid (Spain); Trigo, J F; Guillen, C [Department of Energy, CIEMAT, Avda Complutense, 22, 28040 Madrid (Spain); Ramiro, J, E-mail: josue.friedrich@uam.e [Department of Theory of Signal and Communications, URJC, Campus Fuenlabrada, 122, 28943 Madrid (Spain)

2009-04-21

Structural, compositional, electrical and morphological properties of CuIn{sub 1-x}Ga{sub x}Se{sub 2} (x = 0.15, 0.30) and ordered defect compounds (ODC) CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8}, CuIn{sub 3}Se{sub 5} thin films grown by flash evaporation onto soda lime glass substrates (SLG) and ITO/SLG have been studied. Polycrystalline thin films with accentuated preferential orientation in the (1 1 2) plane of the tetragonal structure have been obtained. Annealing in Se atmosphere improves the structural, morphological, electrical and optical properties of the evaporated films, but provokes the formation of a CuIn{sub x}Se{sub y} phase on the surface of the films. Band gap values ranging between 1.01 and 1.21 eV have been obtained for the as-grown CuIn{sub 1-x}Ga{sub x}Se{sub 2} thin films and between 1.09 and 2.01 eV for the CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8} and CuIn{sub 3}Se{sub 5} thin films.

Multifunctional hydroxyapatite/Na(Y/Gd)F4:Yb3+,Er3+ composite fibers for drug delivery and dual modal imaging.

Science.gov (United States)

Liu, Min; Liu, Hui; Sun, Shufen; Li, Xuejiao; Zhou, Yanmin; Hou, Zhiyao; Lin, Jun

2014-02-04

Porous hydroxyapatite (HAp) composite fibers functionalized with up-conversion (UC) luminescent and magnetic Na(Y/Gd)F4:Yb(3+),Er(3+) nanocrystals (NCs) have been fabricated via electrospinning. After transferring hydrophobic oleic acid-capped Na(Y/Gd)F4:Yb(3+),Er(3+) NCs into aqueous solution, these water-dispersible NCs were dispersed into precursor electrospun solution containing CTAB. Na(Y/Gd)F4:Yb(3+),Er(3+)@HAp composite fibers were fabricated by the high temperature treatment of the electrospun Na(Y/Gd)F4:Yb(3+),Er(3+) NCs decorated precursor fibers. The biocompatibility test on MC 3T3-E1 cells using MTT assay shows that the HAp composite fibers have negligible cytotoxity, which reveals the HAp composite fibers could be a drug carrier for drug delivery. Because the contrast brightening is enhanced at increased concentrations of Gd(3+), the HAp composite fibers can serve as T1 magnetic resonance imaging contrast agents. In addition, the composites uptaken by MC 3T3-E1 cells present the UC luminescent emission of Er(3+) under the excitation of a 980 nm near-infrared laser. The above findings reveal Na(Y/Gd)F4:Yb(3+),Er(3+)@HAp composite fibers have potential applications in drug storage/release and magnetic resonance/UC luminescence imaging.

CdSxSe1−x alloyed quantum dots-sensitized solar cells based on different architectures of anodic oxidation TiO2 film

International Nuclear Information System (INIS)

Li, Zhen; Yu, Libo; Liu, Yingbo; Sun, Shuqing

2014-01-01

Nanostructured TiO 2 translucent films with different architectures including TiO 2 nanotube (NT), TiO 2 nanowire (NW), and TiO 2 nanowire/nanotube (NW/NT) have been produced by second electrochemical oxidization of TiO 2 NT with diameter around 90–110 nm via modulation of applied voltage. These TiO 2 architectures are sensitized with CdS x Se 1−x alloyed quantum dots (QDs) in sizes of around 3–5 nm aiming to tune the response of the photoelectrochemical properties in the visible region. One-step hydrothermal method facilitates the deposition of CdS x Se 1−x QDs onto TiO 2 films. These CdS x Se 1−x QDs exhibit a tunable range of light absorption with changing the feed molar ratio of S:Se in precursor solution, and inject electrons into TiO 2 films upon excitation with visible light, enabling their application as photosensitizers in sensitized solar cells. Power conversion efficiency (PCE) of 2.00, 1.72, and 1.06 % are achieved with CdS x Se 1−x (obtained with S:Se = 0:4) alloyed QDs sensitized solar cells based on TiO 2 NW/NT, TiO 2 NW, and TiO 2 NT architectures, respectively. The significant enhancement of power conversion efficiency obtained with the CdS x Se 1−x /TiO 2 NW/NT solar cell can be attributed to the extended absorption of light region tuned by CdS x Se 1−x alloyed QDs and enlarged deposition of QDs and efficient electrons transport provided by TiO 2 NW/NT architecture

Effect of bath temperature on the properties of CuIn{sub x}Ga{sub 1-x} Se{sub 2} thin films grown by the electrodeposition technique

Energy Technology Data Exchange (ETDEWEB)

Cao Jie; Qu Shengchun; Liu Kong; Wang Zhanguo, E-mail: qsc@semi.ac.c [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2010-08-15

Electrodeposition is a promising and low cost method to synthesize CuIn{sub x} Ga{sub 1-x} Se{sub 2} (CIGS)thin films as an absorber layer for solar cells. The effect of bath temperature on the properties of CIGS thin films was investigated in this paper. CIGS films of 1 {mu}m thickness were electrodeposited potentiostatically from aqueous solution, containing trisodium citrate as a complexing agent, on Mo/glass substrate under a voltage of -0.75 V, and bath temperatures were varied from 20 to 60{sup 0}C. The effects of bath temperature on the properties of CIGS thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy. XRD revealed the presence of the CuIni{sub 0.7}Ga{sub 0.3} Se{sub 2} phase, the optimal phase for application in solar cells. The grain dimensions and crystallizability increase along with the increase of the bath temperature, and the films become stacked and homogeneous. There were few changes in surface morphology and the composition of the films. (semiconductor materials)

Optoelectronic study and annealing stability of room temperature pulsed laser ablated ZnSe polycrystalline thin films

Energy Technology Data Exchange (ETDEWEB)

Khan, Taj Muhammad, E-mail: tajakashne@gmail.com; Zakria, M.; Ahmad, Mushtaq; Shakoor, Rana I.

2014-03-15

In principal, we described stability of the room temperature ZnSe thin films with thermal annealing deposited onto glass by pulsed laser deposition technique using third harmonic 355 nm of Nd: YAG laser beam. Optoelectronic analysis and stability with thermal annealing was described in terms of structural and optical properties. These properties were investigated via X-ray diffraction, atomic force microscope, scanning electron microscope, Raman, Fourier transform infrared and photoluminescence spectroscopies. From the strong reflection corresponding to the (1 1 1) plane (2θ=27.48°) and the longitudinal optical “LO” phonon modes at 250 cm{sup −1} and 500 cm{sup −1} in the X-ray diffraction and Raman spectra, a polycrystalline zincblende structure of the film was established. At 300 and 350 °C annealing temperatures, the film crystallites were preferentially oriented with the (1 1 1) plane parallel to the substrate and became amorphous at 400 °C. Atomic force microscopic images showed that the morphologies of ZnSe films became smooth with root mean squared roughness 9.86 nm after annealing at 300 and 350 °C while a rougher surface was observed for the amorphous film at 400 °C. Fourier transform infrared study illustrated the chemical nature and Zn–Se bonding in the deposited films. For the as-deposited and annealed samples at 300 and 350 °C, scanning electron micrographs revealed mono-dispersed indistinguishable ZnSe grains and smooth morphological structure which changed to a cracking and bumpy surface after annealing at 400 °C. The physical phenomenon of annealing induced morphological changes could be explained in terms of “structure zone model”. Excitonic emission at 456 nm was observed for both as-deposited and annealed film at 350 °C. The transmission spectrum shows oscillatory behavior because of the thin film interference and exhibited a high degree of transparency down to a wavelength ∼500 nm in the IR region. Energy band-gap was

Optical properties and thermal stability of LaYbO3 ternary oxide for high-k dielectric application

Science.gov (United States)

Su, Wei-tao; Yang, Li; Li, Bin

2011-01-01

A new ternary rare oxide dielectric LaYbO3 film had been prepared on silicon wafers and quartz substrates by reactive sputtering method using a La-Yb metal target. A range of analysis techniques was performed to determine the optical band gap, thermal stability, and electrical property of the deposited samples. It was found the band gap of LaYbO3 film was about 5.8 eV. And the crystallization temperature for rapid thermal annealing (20 s) was between 900 and 950 °C. X-ray photoelectron spectroscopy results indicate the formation of the SiO2 and silicate in the interface between silicon wafer and LaYbO3 film. The dielectric constant is about 23 from the calculation of capacitance-voltage curve, which is comparable higher than previously reported La2O3 or Yb2O3 film.

Post-adsorption process of Yb phosphate nano-particle formation by Saccharomyces cerevisiae

Science.gov (United States)

Jiang, MingYu; Ohnuki, Toshihiko; Tanaka, Kazuya; Kozai, Naofumi; Kamiishi, Eigo; Utsunomiya, Satoshi

2012-09-01

In this study, we have investigated the post-adsorption process of ytterbium (Yb) phosphate nano-particle formation by Saccharomyces cerevisiae (yeast). The yeast grown in P-rich medium were exposed to 1.44 × 10-4 mol/L Yb(III) solution for 2-120 h, and 2 months at 25 ± 1 °C at an initial pH of 3, 4, or 5, respectively. Ytterbium concentrations in solutions decreased as a function of exposure time. Field-emission scanning electron microscopy equipped with energy-dispersive X-ray spectroscopy (FESEM), transmission electron microscopy (TEM), and synchrotron-based extended X-ray absorption fine structure (EXAFS) analyses revealed that nano-sized blocky Yb phosphate with an amorphous phase formed on the yeast cells surfaces in the solutions with Yb. These nano-sized precipitates that formed on the cell surfaces remained stable even after 2 months of exposure at 25 ± 1 °C around neutral pHs. The EXAFS data revealed that the chemical state of the accumulated Yb on the cell surfaces changed from the adsorption on both phosphate and carboxyl sites at 30 min to Yb phosphate precipitates at 5 days, indicating the Yb-phosphate precipitation as a major post-adsorption process. In addition, the precipitation of Yb phosphate occurred on cell surfaces during 7 days of exposure in Yb-free solution after 2 h of exposure (short-term Yb adsorption) in Yb solution. These results suggest that the released P from the inside of yeast cells reacted with adsorbed Yb on cell surfaces, resulting in the formation of Yb precipitates, even though no P was added to the exposure solution. In an abiotic system, the EXAFS data showed that the speciation of sorbed Yb on the reference materials, carboxymethyl cellulose and Ln resin, did not change even when the Yb was exposed to P solution, without forming Yb phosphate precipitates. This result strongly suggests that the cell surface of the yeast plays an important role in the Yb-phosphate precipitation process, not only as a carrier of the

Chemical bath ZnSe thin films: deposition and characterisation

Science.gov (United States)

Lokhande, C. D.; Patil, P. S.; Ennaoui, A.; Tributsch, H.

1998-01-01

The zinc selenide (ZnSe) thin films have been deposited by a simple and inexpensive chemical bath deposition (CBD) method. The selenourea was used as a selenide ion source. The ZnSe films have been characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDAX), Rutherford back scattering (RBS), and optical absorption. The as-deposited ZnSe films on various substrates are found to be amorphous and contain O2 and N2 in addition to Zn and Se. The optical band gap of the film is estimated to be 2.9 eV. The films are photoactive as evidenced by time resolved microwave conductivity (TRMC).

Pressure dependence of the specific heat of heavy-fermion YbCu4.5

International Nuclear Information System (INIS)

Amato, A.; Fisher, R.A.; Phillips, N.E.; Jaccard, D.; Walker, E.

1990-03-01

The specific heat of a polycrystalline sample of YbCu 4.5 has been measured between 0.3 and 20K at pressures to 8.2 kbar. Unlike cerium-based heavy-fermion compounds, an increase of C/T is observed with increasing pressure, with the linear term enhanced by about 16% at 8.2 kbar. Above 7K, (∂C/∂P) T is negative. The nuclear contribution observed at P = 0 is increased by roughly a factor of two at 8.2 kbar. 7 refs., 3 figs

Identification and characterization of NF-YB family genes in tung tree.

Science.gov (United States)

Yang, Susu; Wang, Yangdong; Yin, Hengfu; Guo, Haobo; Gao, Ming; Zhu, Huiping; Chen, Yicun

2015-12-01

The NF-YB transcription factor gene family encodes a subunit of the CCAAT box-binding factor (CBF), a highly conserved trimeric activator that strongly binds to the CCAAT box promoter element. Studies on model plants have shown that NF-YB proteins participate in important developmental and physiological processes, but little is known about NF-YB proteins in trees. Here, we identified seven NF-YB transcription factor-encoding genes in Vernicia fordii, an important oilseed tree in China. A phylogenetic analysis separated the genes into two groups; non-LEC1 type (VfNF-YB1, 5, 7, 9, 11, 13) and LEC1-type (VfNF-YB 14). A gene structure analysis showed that VfNF-YB 5 has three introns and the other genes have no introns. The seven VfNF-YB sequences contain highly conserved domains, a disordered region at the N terminus, and two long helix structures at the C terminus. Phylogenetic analyses showed that VfNF-YB family genes are highly homologous to GmNF-YB genes, and many of them are closely related to functionally characterized NF-YBs. In expression analyses of various tissues (root, stem, leaf, and kernel) and the root during pathogen infection, VfNF-YB1, 5, and 11 were dominantly expressed in kernels, and VfNF-YB7 and 9 were expressed only in the root. Different VfNF-YB family genes showed different responses to pathogen infection, suggesting that they play different roles in the pathogen response. Together, these findings represent the first extensive evaluation of the NF-YB family in tung tree and provide a foundation for dissecting the functions of VfNF-YB genes in seed development, stress adaption, fatty acid synthesis, and pathogen response.

An investigation on silar Cu(In{sub 1-x}Al{sub x})Se{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Dhanam, M. [PG and Research, Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Kavitha, B., E-mail: kavitha_48@yahoo.co.in [PG and Research, Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Velumani, S. [Centro de Investigacion y de Estudios Avanzados del I.P.N.(CINVESTAV) (Mexico)

2010-10-25

Cu(In{sub 1-x}Al{sub x})Se{sub 2} [CIAS] thin films were prepared for the first time by successive ionic layer adsorption and reaction [SILAR] method with two different dipping cycles. The thickness of the films was measured by gravimetric technique. The structural, morphological, compositional, optical transition and electrical investigation of SILAR CIAS thin films with respect to two different dipping cycles have been discussed in this paper.

Structural properties of pure and Fe-doped Yb films prepared by vapor condensation

Energy Technology Data Exchange (ETDEWEB)

Rojas-Ayala, C., E-mail: chachi@cbpf.br [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180, RJ (Brazil); Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Lima, P.O.B. 14-149, Lima 14 (Peru); Passamani, E.C. [Departamento de Física, Universidade Federal do Espírito Santo, Vitória 29075-910, ES (Brazil); Suguihiro, N.M. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180, RJ (Brazil); Litterst, F.J. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180, RJ (Brazil); Institut für Physik der Kondensierten Materie, Technische Universität Braunschweig, 38106 Braunschweig (Germany); Baggio Saitovitch, E. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180, RJ (Brazil)

2014-10-15

Ytterbium and iron-doped ytterbium films were prepared by vapor quenching on Kapton substrates at room temperature. Structural characterization was performed by X-ray diffraction and transmission electron microscopy. The aim was to study the microstructure of pure and iron-doped films and thereby to understand the effects induced by iron incorporation. A coexistence of face centered cubic and hexagonal close packed-like structures was observed, the cubic-type structure being the dominant contribution. There is an apparent thickness dependence of the cubic/hexagonal relative ratios in the case of pure ytterbium. Iron-clusters induce a crystalline texture effect, but do not influence the cubic/hexagonal volume fraction. A schematic model is proposed for the microstructure of un-doped and iron-doped films including the cubic- and hexagonal-like structures, as well as the iron distribution in the ytterbium matrix. - Highlights: • Pure and Fe-doped Yb films have been prepared by vapor condensation. • Coexistence of fcc- and hcp-type structures was observed. • No oxide phases have been detected. • Fe-clustering does not affect the fcc/hcp ratio, but favors a crystalline texture. • A schematic model is proposed to describe microscopically the microstructure.

Multiwavelength excitation Raman scattering of Cu{sub 2}ZnSn(S{sub x}Se{sub 1−x}){sub 4} (0 ≤ x ≤ 1) polycrystalline thin films: Vibrational properties of sulfoselenide solid solutions

Energy Technology Data Exchange (ETDEWEB)

Dimitrievska, Mirjana; Xie, Haibing; Fairbrother, Andrew; Fontané, Xavier; Saucedo, Edgardo; Izquierdo-Roca, Victor, E-mail: vizquierdo@irec.cat [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1 2pl., 08930 Sant Adrià del Besòs, Barcelona (Spain); Gurieva, Galina [Helmholtz Centre Berlin for Materials and Energy, Department Crystallography, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Pérez-Rodríguez, Alejandro [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1 2pl., 08930 Sant Adrià del Besòs, Barcelona (Spain); IN" 2UB, Departament d' Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, 08028 Barcelona (Spain); Schorr, Susan [Helmholtz Centre Berlin for Materials and Energy, Department Crystallography, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institute of Geological Sciences, Freie Universität Berlin, Malteserstr. 74-100, 12249 Berlin (Germany)

2014-07-21

In this work, Raman spectroscopy and X-ray diffraction were applied together to evaluate the crystal structure and the phonon modes of photovoltaic grade Cu{sub 2}ZnSn(S{sub x}Se{sub 1−x}){sub 4} thin films, leading to a complete characterization of their structural and vibrational properties. Vibrational characterization has been based on Raman scattering measurements performed with different excitation wavelengths and polarization configurations. Analysis of the experimental spectra has permitted identification of 19 peaks, which positions are in good accord with theoretical predictions. Besides, the observation of Cu{sub 2}ZnSnS{sub 4}-like A symmetry peaks related to S vibrations and Cu{sub 2}ZnSnSe{sub 4}-like A symmetry peaks related to Se vibrations, additional Raman peaks, characteristic of the solid solution and previously not reported, are observed, and are attributed to vibrations involving both S and Se anions.

Continuous wave and tunable laser operation of Yb3+ in disordered NaLa(MoO4)2

Science.gov (United States)

Rico, M.; Liu, J.; Cano-Torres, J. M.; García-Cortés, A.; Cascales, C.; Zaldo, C.; Griebner, U.; Petrov, V.

2005-09-01

Continuous-wave Yb3+ laser operation is studied in single crystals of disordered NaLa(MoO4)2 at room temperature. The sample used was grown by the Czochralski technique and incorporates an Yb ion density of 3.1×1020 cm-3. The effect of the Yb concentration on some of the crystal properties is described as well as the spectroscopic Yb3+ properties at 5 K. Maximum slope efficiencies of about 40% for π and 38% for σ polarization were obtained under Ti:sapphire laser pumping near 976 nm, respectively. The maximum output power for the π polarization was 400 mW at 1039.5 nm, the threshold in this case amounted to 240 mW (absorbed pump power). The laser emission was tunable between 1016 and 1064 nm with a Lyot filter. Lasing was also realized by pumping with a fiber-coupled diode laser module. Maximum output power of 900 mW at 1035 nm was achieved in this case for the π polarization and the threshold was 280 mW. The results, in terms of output power and tunability, are superior in comparison to all previous reports on Yb-doped disordered double tungstate or molybdate crystals and represent a significant improvement in comparison to earlier experiments with low-doped Yb:NaLa(MoO4)2.

A mass spectrometric study of the neutral and ionic vapor components of ytterbium chlorides; formation enthalpies of YbCl2 and YbCl3 molecules, and YbCl3- and YbCl4- ions in the gas phase

International Nuclear Information System (INIS)

Kuznetsov, F.Yh.; Kudin, L.S.; Pogrebnoj, A.M.; Butman, M.F.; Burdukovskaya, G.G.

1997-01-01

Ionic and neutral components of saturated vapour over the ytterbium di-and trichloride is studied through the Knudsen effusive method with mass-spectromic registration of evaporated products within the temperature range of 1000-1300 K. It is found that ytterbium trichloride is subjected to thermal decomposition with formation of ytterbium dichloride and molecular chloride. Sublimation enthalpy and enthalpy of YbCl 2 and YbCl 3 molecules formation in a gaseous phase at 298 K, comprising 356±6, 293±8, -425±6 and -667±6 kJ/mole correspondingly, are determined with application of 2 and 3 thermodynamical laws. Enthalpies of YbCl 3 - and YbCl 4 - negative ions formation in a gaseous phase at 298 K equal to -895 and -1211±30 kJ/mole correspondingly are calculated by measured equilibrium constants ion-molecular reaction. 30 refs., 3 figs., 3 tabs

Fabrication and charge/energy-transfer study of 4,7-bis(4-triphenylamino)benzo- 2,1,3-thiadiazole/CuPc composite films

International Nuclear Information System (INIS)

Zhu Yuanyuan; Wei Xiao; Xue Minzhao; Zhang Qing; Sheng Qiaorong; Liu Yangang; Gu Shuangxi

2010-01-01

Composite films of 4,7-bis(4-triphenylamino)benzo-2,1,3-thiadiazole (TBT) and copper phthalocyanine (CuPc) are fabricated via protonation-coelectrophoretic deposition from nitromethane solutions of TBT/CuPc mixture in the presence of trifluoroacetic acid as a protonation reagent. A nanospheres-nanowires interpenetrating network structure is obtained when the molar percentage of TBT is 70%. Furthermore, the existence of TBT makes α-phased CuPc be partly transformed into the β-phase, and simultaneously, CuPc disorganizes the TBT unit cells. The blue shift on the absorption edge of TBT and the significant fluorescence quenching in the composite films indicate energy/charge transfer and donor-acceptor (D-A) heterojunction formation. Then these results are proved from another point of view: the mutual overlap of absorption and emission spectra of TBT and CuPc lead to a bidirectional Foerster resonance energy transfer at the interface; the molecular energy levels calculated from the results of cyclic voltammetry theoretically determine that there exist a D-A heterojunction and charge transfer from TBT to CuPc. Finally, from the investigation of the field-induced surface photovoltage spectra, it can be concluded that this charge transfer results in efficient dissociation of the photoinduced excitons in the composite films, followed by the generation of a strong photovoltage response.

Fabrication and charge/energy-transfer study of 4,7-bis(4-triphenylamino)benzo- 2,1,3-thiadiazole/CuPc composite films

Energy Technology Data Exchange (ETDEWEB)

Zhu Yuanyuan; Wei Xiao; Xue Minzhao; Zhang Qing; Sheng Qiaorong; Liu Yangang [School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Gu Shuangxi, E-mail: mzxue@sjtu.edu.c [Department of Chemistry, Fudan University, Shanghai 200433 (China)

2010-12-15

Composite films of 4,7-bis(4-triphenylamino)benzo-2,1,3-thiadiazole (TBT) and copper phthalocyanine (CuPc) are fabricated via protonation-coelectrophoretic deposition from nitromethane solutions of TBT/CuPc mixture in the presence of trifluoroacetic acid as a protonation reagent. A nanospheres-nanowires interpenetrating network structure is obtained when the molar percentage of TBT is 70%. Furthermore, the existence of TBT makes {alpha}-phased CuPc be partly transformed into the {beta}-phase, and simultaneously, CuPc disorganizes the TBT unit cells. The blue shift on the absorption edge of TBT and the significant fluorescence quenching in the composite films indicate energy/charge transfer and donor-acceptor (D-A) heterojunction formation. Then these results are proved from another point of view: the mutual overlap of absorption and emission spectra of TBT and CuPc lead to a bidirectional Foerster resonance energy transfer at the interface; the molecular energy levels calculated from the results of cyclic voltammetry theoretically determine that there exist a D-A heterojunction and charge transfer from TBT to CuPc. Finally, from the investigation of the field-induced surface photovoltage spectra, it can be concluded that this charge transfer results in efficient dissociation of the photoinduced excitons in the composite films, followed by the generation of a strong photovoltage response.

High-pressure synthesis and characterization of the effective pseudospin S =1 /2 XY pyrochlores R2P t2O7 (R =Er ,Yb )

Science.gov (United States)

Cai, Y. Q.; Cui, Q.; Li, X.; Dun, Z. L.; Ma, J.; dela Cruz, C.; Jiao, Y. Y.; Liao, J.; Sun, P. J.; Li, Y. Q.; Zhou, J. S.; Goodenough, J. B.; Zhou, H. D.; Cheng, J.-G.

2016-01-01

We report on the high-pressure syntheses and detailed characterizations of two effective pseudospin S =1 /2 XY pyrochlores E r2P t2O7 and Y b2P t2O7 via x-ray/neutron powder diffraction, dc and ac magnetic susceptibility, and specific-heat measurements down to 70 mK. We found that both compounds undergo long-range magnetic transitions at TN ,C≈0.3 K , which are ascribed to an antiferromagnetic- and ferromagnetic-type order for E r2P t2O7 and Y b2P t2O7 , respectively, based on the field dependence of their transition temperatures as well as the systematic comparisons with other similar pyrochlores R2B2O7 (R =Er ,Yb ;B =Sn ,Ti ,Ge ). The observed TN of E r2P t2O7 is much lower than that expected from the relationship of TN versus the ionic radius of B4 + derived from the series of E r2B2O7 , while the TC of Y b2P t2O7 is the highest among the series of ferromagnetic compounds Y b2B2O7 (B =Sn ,Pt ,Ti ). Given the monotonic variation of the lattice constant as a function of the B -cation size across these two series of R2B2O7 (R =Er ,Yb ), the observed anomalous values of TN ,C in the Pt-based XY pyrochlores imply that another important factor beyond the nearest-neighbor R -R distance is playing a role. In light of the anisotropic exchange interactions Jex={Jz z,J±,J±±,Jz ± } for the S =1 /2 XY pyrochlores, we have rationalized these observations by considering a weakened (enhanced) antiferromagnetic planar J± (ferromagnetic Ising-like Jz z) due to strong Pt 5 d -O 2 p hybridization within the plane perpendicular to the local [111] direction.

Electrosynthesis and characterization of Fe doped CdSe thin films from ethylene glycol bath

International Nuclear Information System (INIS)

Pawar, S.M.; Moholkar, A.V.; Rajpure, K.Y.; Bhosale, C.H.

2007-01-01

The CdSe and Fe doped CdSe (Fe:CdSe) thin films have been electrodeposited potentiostatically onto the stainless steel and fluorine doped tin oxide (FTO) glass substrates, from ethylene glycol bath containing (CH 3 COO) 2 .Cd.2H 2 O, SeO 2 , and FeCl 3 at room temperature. The doping concentration of Fe is optimized by using (photo) electrochemical (PEC) characterization technique. The deposition mechanism and Fe incorporation are studied by cyclic voltammetry. The structural, surface morphological and optical properties of the deposited CdSe and Fe:CdSe thin films have been studied by X-ray diffraction, scanning electron microscopy (SEM) and optical absorption techniques respectively. The PEC study shows that Fe:CdSe thin films are more photosensitive than that of undoped CdSe thin films. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure. SEM studies reveal that the films with uniformly distributed grains over the entire surface of the substrate. The complete surface morphology has been changed after doping. Optical absorption study shows the presence of direct transition and a considerable decrease in bandgap, E g from 1.95 to 1.65 eV

Thermal and electron transport studies on the valence fluctuating compound YbNiAl4

Science.gov (United States)

Falkowski, M.; Kowalczyk, A.

2018-05-01

We report the thermoelectric power S and thermal conductivity κ measurements on the valence fluctuating compound YbNiAl4, furthermore taking into account the impact of the applied magnetic field. We discuss our new results with revisiting the magnetic [χ(T)], transport [ρ(T)], and thermodynamic [Cp(T)] properties in order to better understand the phenomenon of thermal and electron transport in this compound. The field dependence of the magnetoresistivity data is also given. The temperature dependence of thermoelectric power S(T) was found to exhibit a similar behaviour as expected for Yb-based compounds with divalent or nearly divalent Yb ions. In addition, the values of total thermal conductivity as a function of temperature κ(T) of YbNiAl4 are fairly low compared to those of pure metals which may be linked to the fact that the conduction band is perturbed by strong hybridization. A deeper analysis of the specific heat revealed the low-T anomaly of the ratio Cp(T)/T3, most likely associated with the localized low-frequency oscillators in this alloy. In addition, the Kadowaki-Woods ratio and the Wilson ratio are discussed with respect to the electronic correlations in YbNiAl4.

Structured optical vortices with broadband comb-like optical spectra in Yb:Y3Al5O12/YVO4 Raman microchip laser

Science.gov (United States)

Dong, Jun; Wang, Xiaolei; Zhang, Mingming; Wang, Xiaojie; He, Hongsen

2018-04-01

Structured optical vortices with 4 phase singularities have been generated in a laser diode pumped continuous-wave Yb:Y3Al5O12/YVO4 (Yb:YAG/YVO4) Raman microchip laser. The broadband comb-like first order Stokes laser emitting spectrum including 30 longitudinal modes covers from 1072.49 nm to 1080.13 nm with a bandwidth of 7.64 nm, which is generated with the Raman shift 259 cm-1 of the c-cut YVO4 crystal converted from the fundamental laser around 1.05 μm. Pump power dependent optical vortex beams are attributed to overlap of the Stokes laser field with the fundamental laser field caused by dynamically changing the coupling losses of the fundamental laser field. The maximum output power is 1.16 W, and the optical-to-optical efficiency is 18.4%. This work provides a method for generating structured optical vortices with an optical frequency comb in solid-state Raman microchip lasers, which have potential applications in quantum computations, micro-machining, and information processing.

ZnSe thin films by chemical bath deposition method

Energy Technology Data Exchange (ETDEWEB)

Lokhande, C.D.; Patil, P.S.; Tributsch, H. [Hahn-Meitner-Institute, Bereich Physikalische Chemie, Abt. CS, Glienicker Strasse-100, D-14109 Berlin (Germany); Ennaoui, A. [Hahn-Meitner-Institute, Bereich Physikalische Chemie, Abt. CG, Glienicker Strasse-100, D-14109 Berlin (Germany)

1998-09-04

The ZnSe thin films have been deposited onto glass substrates by the simple chemical bath deposition method using selenourea as a selenide ion source from an aqueous alkaline medium. The effect of Zn ion concentration, bath temperature and deposition time period on the quality and thickness of ZnSe films has been studied. The ZnSe films have been characterized by XRD, TEM, EDAX, TRMC (time-resolved microwave conductivity), optical absorbance and RBS techniques for their structural, compositional, electronic and optical properties. The as-deposited ZnSe films are found to be amorphous, Zn rich with optical band gap, Eg, equal to 2.9 eV

Synthesis, structure, and polymorphism of A{sub 3}LnSi{sub 2}O{sub 7} (A=Na, K; Ln=Sm, Ho, Yb)

Energy Technology Data Exchange (ETDEWEB)

Latshaw, Allison M.; Yeon, Jeongho; Smith, Mark D.; Loye, Hans-Conrad zur, E-mail: zurloye@mailbox.sc.edu

2016-03-15

Four new members of the A{sub 3}LnSi{sub 2}O{sub 7} family, K{sub 3}SmSi{sub 2}O{sub 7}, Na{sub 3}HoSi{sub 2}O{sub 7}, and two polymorphs of Na{sub 3}YbSi{sub 2}O{sub 7}, are reported. K{sub 3}SmSi{sub 2}O{sub 7} crystallizes in the hexagonal space group P6{sub 3}/mcm, Na{sub 3}HoSi{sub 2}O{sub 7} and Na{sub 3}YbSi{sub 2}O{sub 7} crystallize in the hexagonal space group P6{sub 3}/m, and Na{sub 3}YbSi{sub 2}O{sub 7} crystallizes in the trigonal space group P31c. The Na{sub 3}YbSi{sub 2}O{sub 7} composition that crystallizes in P31c is a new structure type. The magnetic properties for the Ho and Yb analogs are reported. - Graphical abstract: The different structure types and polymorphs of the A{sub 3}LnSi{sub 2}O{sub 7} family reported. - Highlights: • Four new members of the A{sub 3}LnSi{sub 2}O{sub 7} family are presented. • Na{sub 3}YbSi{sub 2}O{sub 7} is reported as two polymorphs, one is a new structure type. • Crystals synthesized out of molten fluoride fluxes.

Enhancing photovoltaic performance of dye-sensitized solar cell by rare-earth doped oxide of Lu2O3:(Tm3+, Yb3+)

International Nuclear Information System (INIS)

Li Qingbei; Lin Jianming; Wu Jihuai; Lan Zhang; Wang Yue; Peng Fuguo; Huang Miaoliang

2011-01-01

Highlights: → Tm 3+ /Yb 3+ codoped oxide is introduced into the TiO 2 film in dye-sensitized solar cell. → The RE improves light harvest via conversion luminescence and increases photocurrent. → The RE elevates the oxide film energy level and increases the cell photovoltage. → The cell efficiency is increased by 11.1% compared to the cell lacking of RE doping. - Abstract: In order to increase of the photocurrent, photovoltage and energy conversion efficiency of dye-sensitized solar cell (DSSC), rare-earth doped oxide of Lu 2 O 3 :(Tm 3+ , Yb 3+ ) is prepared and introduced into the TiO 2 film in the DSSC. As a luminescence medium, Lu 2 O 3 :(Tm 3+ , Yb 3+ ) improves incident light harvest via a conversion luminescence process and increases photocurrent; as a p-type dopant, the rare-earth ions elevate the energy level of the oxide film and increase the photovoltage. Under a simulated solar light irradiation of 100 mW cm -2 , the light-to-electric energy conversion efficiency of the DSSC with Lu 2 O 3 :(Tm 3+ , Yb 3+ ) doping reaches 6.63%, which is increased by 11.1% compared to the DSSC without Lu 2 O 3 :(Tm 3+ , Yb 3+ ) doping.

Analysis of electrical properties of heterojunction based on ZnIn2Se4

Science.gov (United States)

Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.; Al-Harbi, F. F.

2017-04-01

Heterojunction of n-ZnIn2Se4/p-Si was fabricated using thermal evaporation of ZnIn2Se4 thin films of thickness 473 nm onto p-Si substrate at room temperature. The characteristics of current-voltage (I-V) for n-ZnIn2Se4/p-Si heterojunction were investigated at different temperatures ranged from 308 K to 363 K. The junction parameters namely are; rectification ratio (RR), series resistance (Rs), shunt resistance (Rsh) and diode ideality factor (n) were calculated from the analysis of I-V curves. The forward current showed two conduction mechanisms operating, which were the thermionic emission and the single trap space charge limited current in low (0 ≤ V ≤ 0.5 V) and high (V ≥ 0.7 V) ranges of voltage, respectively. The reverse current was due to the generation through Si rather than the ZnIn2Se4 film. The built-in voltage and the width of the depletion region were determined from the capacitance-voltage (C-V) measurements. The photovoltaic characteristics of the junction were also studied through the (I-V) measurements under illumination of 40 mW/cm2. The cell parameters; the short-circuit current, the open-circuit voltage and the fill factor were estimated at room temperature.

Magnetic linear dichroism in x-ray emission spectroscopy: Yb in Yb3 Fe5 O12

NARCIS (Netherlands)

Groot, F.M.F. de; Krisch, M.H.; Sette, F.; Vogel, J.

2000-01-01

A magnetic linear dichroism MLD effect of up to 5% has been observed in the 2p 1/2 4d x-ray emission spectrum of Yb in Yb 3 Fe 5 O 12 . The spectral shape is well reproduced with an atomic multiplet calculation of the 4d to 2p decay. It is shown that the details of the spectral shapes are

Controllable synthesis and crystal structure determined upconversion luminescence properties of Tm{sup 3+} (Er{sup 3+}) ions doped YbF{sub 3} and NaYbF{sub 4} crystals

Energy Technology Data Exchange (ETDEWEB)

Jiang, Tao [Institute of Photonics, Faculty of Science, Ningbo University, Ningbo 315211 (China); Qin, Weiping, E-mail: wpqin@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Zhou, Jun [Institute of Photonics, Faculty of Science, Ningbo University, Ningbo 315211 (China)

2014-04-01

Graphical abstract: - Highlights: • The synthesis of YbF{sub 3} and NaYbF{sub 4} crystals was successfully fulfilled by hydrothermal method. • The phase and morphology of products were adjusted by changing the hydrothermal conditions. • Relatively enhanced ultraviolet upconversion emissions were observed in YbF{sub 3} nanocrystals. • The crystalline phase impact on the upconversion luminescence was systematically studied. - Abstract: The synthesis of YbF{sub 3} and NaYbF{sub 4} crystals was successfully fulfilled by a facial hydrothermal method. The phase and morphology of the products were adjusted by changing the surfactant additive and fluorine source and tuning the pH value of the initial solution. The products with various morphologies range from octahedral nanoparticles, corn-like nanobundles, nanospheres, microrods, and hollow microprisms were prepared at different conditions. The growth mechanism of these products has been systematically studied. Impressively, relatively enhanced high order ultraviolet (UV) upconversion (UC) luminescence was observed in Tm{sup 3+} (Er{sup 3+}) ions doped YbF{sub 3} nanocrystals (NCs) compared with NaYbF{sub 4} microcrystals under the excitation of 980 nm infrared laser. The investigation results reveal that the crystal symmetry of matrix has significant effect on the spectra and lifetimes of the doping lanthanide ions. The simply synthesized water soluble YbF{sub 3} NCs with efficient UV UC luminescence may find potential application in biochemistry.

Bandgap engineering by substitution of S by Se in nanostructured ZnS{sub 1-x}Se{sub x} thin films grown by soft chemical route for nontoxic optoelectronic device applications

Energy Technology Data Exchange (ETDEWEB)

Sadekar, Harishchandra K [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, Maharashtra (India); Department of Physics, Arts, Commerce and Science College, Sonai 414105, Maharashtra (India); Ghule, Anil Vithal [Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, Maharashtra (India); Sharma, Ramphal [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, Maharashtra (India)

2011-05-05

Highlights: > ZnS{sub 1-x}Se{sub x} (x = 0 to 1) thin films are successfully deposited on glass substrates by soft chemical route. > Structural, optical and electrical properties are studied. > Change in band gap, crystallite size and resistivity is noted with change in S:Se ratio. > Wide band gap material (ZnS{sub 1-x}Se{sub x}) is useful for photosensor and solar cell applications. > It utilizes whole visible light spectrum and is a best alternative to conventionally used toxic CdS. - Abstract: Thin films of nanostructured ZnS{sub 1-x}Se{sub x} with optimized growth parameters were prepared by soft chemical route on glass substrates. Ammonia free precursors were used at 80 deg. C constant bath temperature. The ratio of sulphur to selenium was changed continuously by changing the composition x (0-1), while atomic concentration of zinc was kept constant. Structure, composition and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX) and scanning electron microscopy (SEM), atomic force microscopy (AFM) respectively. XRD studies revealed that as-deposited films were nanostructured in nature with cubic zinc blended structure. It was further observed that the preferred orientations are along (1 1 1) plane and crystallite size decreased with increase in the value of x. SEM and AFM images revealed that films were uniform and pinhole free. The optical band gap (E{sub g}) was calculated from the observed transmittance spectra by Urbach method. It was found that the band gap varied linearly from 3.71 to 2.70 eV, as composition x varies 0-1. The electrical properties' study revealed that the decrease in resistivity and increase in photosensitivity, as composition x varied 0-1. The observed interesting properties of ZnS{sub 1-x}Se{sub x} thin films justified their significance in optoelectronic device fabrication and applications, and as an environment friendly alternative to the commonly used toxic

Overexpression of YB1 C-terminal domain inhibits proliferation, angiogenesis and tumorigenicity in a SK-BR-3 breast cancer xenograft mouse model.

Science.gov (United States)

Shi, Jian-Hong; Cui, Nai-Peng; Wang, Shuo; Zhao, Ming-Zhi; Wang, Bing; Wang, Ya-Nan; Chen, Bao-Ping

2016-01-01

Y-box-binding protein 1 (YB1) is a multifunctional transcription factor with vital roles in proliferation, differentiation and apoptosis. In this study, we have examined the role of its C-terminal domain (YB1 CTD) in proliferation, angiogenesis and tumorigenicity in breast cancer. Breast cancer cell line SK-BR-3 was infected with GFP-tagged YB1 CTD adenovirus expression vector. An 3-(4,5-dimethylthiazol-2-yl)-5-(3-carboxymethoxyphenyl)-2-(4-sulfophenyl)-2H-tetrazolium (MTS) proliferation assay showed that YB1 CTD decreased SK-BR-3 cell proliferation, and down-regulated cyclin B1 and up-regulated p21 levels in SK-BR-3 cells. YB1 CTD overexpression changed the cytoskeletal organization and slightly inhibited the migration of SK-BR-3 cells. YB1 CTD also inhibited secreted VEGF expression in SK-BR-3 cells, which decreased SK-BR-3-induced EA.hy926 endothelial cell angiogenesis in vitro. YB1 CTD overexpression attenuated the ability of SK-BR-3 cells to form tumours in nude mice, and decreased in vivo VEGF levels and angiogenesis in the xenografts in SK-BR-3 tumour-bearing mice. Taken together, our findings demonstrate the vital role of YB1 CTD overexpression in inhibiting proliferation, angiogenesis and tumorigenicity of breast cancer cell line SK-BR-3.

Room temperature diode-pumped Yb:CaYAlO4 laser with near quantum limit slope efficiency

International Nuclear Information System (INIS)

Tan, W D; Tang, D Y; Zhang, J; Xu, C W; Cong, Z H; Xu, X D; Li, D Z; Xu, J

2011-01-01

The room temperature continuous wave (CW) laser performance of a compact Yb:CaYAlO 4 (Yb:CYA) laser with near quantum limit slope efficiency is demonstrated. Pumped with a CW diode operating at 979 nm, the laser emitted a maximum CW output power of 2.3 W at 1050 nm. The corresponding slope efficiency was found to be 92% while the optical to optical conversion efficiency was 70%. The laser can also be continuously tuned from 1008 nm to 1063 nm using an intra-cavity SF 10 prism. The round trip cavity losses of Yb:CYA was 0.6% while the loss coefficient of the crystal was 0.01 cm -1

Frustrated magnetism in Yb{sub 2}Fe{sub 12}P{sub 7}

Energy Technology Data Exchange (ETDEWEB)

Grube, Kai; Zocco, Diego A.; Weber, Frank; Kuntz, Sebastian; Loehneysen, Hilbert von [Karlsruhe Institute of Technology, Institut fuer Festkoerperphysik, 76021 Karlsruhe (Germany); Baumbach, Ryan [National High Magnetic Field Laboratory, Tallahassee (United States); Hamlin, James [Departement of Physics, University of Florida, Gainesville (United States); Lum, Ivy; Maple, M. Brian [Department of Physics, University of California, San Diego (United States); Lynn, Jeff; Huang, Qingzhen [NIST Center for Neutron Research, Gaithersburg (United States); Janoschek, Marc [Los Alamos National Laboratory (United States)

2016-07-01

Yb{sub 2}Fe{sub 12}P{sub 7} is characterized by a low magnetic transition temperature of T{sub N} ∼1 K and the breakdown of Fermi-liquid behavior. These properties suggest the proximity to a quantum critical point (QCP). The non-Fermi-liquid (NFL) behavior, however, does not conform to the standard QCP scenario described by the Hertz-Millis-Moriya theory. We measured thermal expansion, magnetostriction and magnetization. The pressure dependence was studied up to 15 GPa using resistivity measurements in piston cylinder and diamond anvil cells. The measurements reveal that only a small fraction of the Yb moments participate in the long-range magnetic order. The Grueneisen ratio does not diverge for T → 0 indicating that the NFL behavior is not related to a nearby pressure-induced QCP. In view of the unusual noncentrometric crystal structure, our observations might point to geometric frustration of the magnetic moments.

Fabrication of Y{sub 2}Ti{sub 2}O{sub 7}:Yb{sup 3+},Ho{sup 3+} nanoparticles by a gel-combustion approach and upconverting luminescent properties

Energy Technology Data Exchange (ETDEWEB)

Chen, Zhongsheng, E-mail: zhshcheng@ecit.cn [State Key Laboratory Breeding Base of Nuclear Resources and Environment, East China Institute of Technology, Nanchang, Jiangxi 330013 (China); Wang, Min; Wang, Haiqing; Le, Zhanggao; Huang, Guolin; Zou, Lixia; Liu, Zhirong [State Key Laboratory Breeding Base of Nuclear Resources and Environment, East China Institute of Technology, Nanchang, Jiangxi 330013 (China); Wang, Dianyuan; Wang, Qingkai [College of Science, Jiujiang University, Jiujiang, Jiangxi 332005 (China); Gong, Weiping [Electronic Science Department, Huizhou University, Huizhou, Guangdong 516001 (China)

2014-09-01

Highlights: • Co-doped (Y{sub 0.99−x}Ho{sub 0.01}Yb{sub x}){sub 2}Ti{sub 2}O{sub 7} nanophosphors were fabricated by gel-combustion method. • The effect of calcination and Yb{sup 3+} doping on upconverting spectra of nanophosphors was studied. • The dependence of upconverting intensity on the excitation power was examined. - Abstract: Yb{sup 3+}, Ho{sup 3+} co-doped pyrochlore-structured (Y{sub 0.99−x}Ho{sub 0.01}Yb{sub x}){sub 2}Ti{sub 2}O{sub 7} (x = 0, 2.5, 5.0, 7.5, 10.0 and 12.5 mol%) nanoparticles (NPs) were successfully fabricated via a gel-combustion approach. The products as-obtained were characterized by various techniques, i.e. X-ray diffraction, transmission electron microscope, Fourier transformed infrared spectra and upconverting spectra. The results indicate that the bright green (∼540 nm) and red (∼660 nm) emissions are observed in Y{sub 2}Ti{sub 2}O{sub 7}:Ho{sup 3+},Yb{sup 3+} NPs under the 980 nm excitation, which is ascribed to the radiative transitions ({sup 5}F{sub 4},{sup 5}S{sub 2}) → {sup 5}I{sub 8} and {sup 5}F{sub 5} → {sup 5}I{sub 8} of Ho{sup 3+} ions, respectively. It is also found that the calcining temperature and Yb{sup 3+} ion doping level have a great influence on the upconverting spectra of (Y{sub 0.99−x}Ho{sub 0.01}Yb{sub x}){sub 2}Ti{sub 2}O{sub 7} NPs. The emission intensities increase initially and then fall down from 800 to 1000 °C. The optimum doping level of Yb{sup 3+} ions is 7.5 mol%, and the intensity of upconverting emissions for (Y{sub 0.915}Ho{sub 0.01}Yb{sub 0.075}){sub 2}Ti{sub 2}O{sub 7} NPs is enhanced by the fold of 32 compared to the Yb{sup 3+}-free samples. The dependence of upconverting intensity on the excitation power reveals the contribution of two photons to both the green and red upconverting process under lower excitation power, and the possible upconverting mechanisms have been proposed accordingly.

Ytterbium doped silicon clusters YbSi{sub n} (n = 4–10) and their anions: Structures, thermochemistry, and electron affinities

Energy Technology Data Exchange (ETDEWEB)

Xie, Xiaohong [School of Chemical Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China); Hao, Dongsheng [School of Chemical Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China); School of Mining and Technology, Inner Mongolia University of Technology, Hohhot 010051 (China); Yang, Jucai, E-mail: yangjc@imut.edu.cn [School of Chemical Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China); School of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China)

2015-11-05

Highlights: • The ground-state structure of YbSi{sub n} and its anion is substitutional structure. • The four DFT AEAs are in excellent agreement with the experimental data. • Theoretical AEA of 2.33 eV of YbSi{sub 9} is more reasonable than the experimental 2.60 eV. • Hardness analysis reveals that doping Yb to Si{sub n} raises photochemical sensitivity. • Relative stabilities of YbSi{sub n} and their anions are examined. - Abstract: The structures, electron affinities, dissociation energies, hardness, and dipole moments of YbSi{sub n} (n = 4–10) and their anions were examined using B3LYP, TPSSh, PBE and wB97X methods. The lowest-energy structures can be regarded as replacing a Si of the ground-state structure of Si{sub n+1} with a Yb atom. The theoretical adiabatic electron affinities (AEAs) of YbSi{sub n} are in excellent agreement with experimental data. The average absolute errors from experiment are by 0.08, 0.07, 0.05 and 0.08 eV at the B3LYP, the TPSSh, the PBE and the wB97X levels, respectively. Theoretical AEAs of 2.33 ± 0.05 eV for YbSi{sub 9} are more reliable than the experimental value of 2.60 ± 0.05 eV. The hardness analysis reveals that doping Yb atom to Si{sub n} (n = 4–10) clusters raises the photochemical sensitivity. The dissociation energies of Yb atom from YbSi{sub n} and their anions were calculated to examine relative stabilities.

Characteristics of CuInSe2 thin films grown by the selenization method

International Nuclear Information System (INIS)

Kim, Sang Deok; Kim, Hyeong Joon; Adurodija, Frederick Ojo; Yoon, Kyeong Hoon; Song, Jin Soo

1999-01-01

CuInSe 2 thin films were formed from a selenization of co-sputtered Cu-In alloy layers which consisted of only two phases, CuIn 2 and Cu 11 In 9 . A linear dependence of the Cu-In alloy film composition on the Cu/In sputtering power was found. The metallic layers were selenized in vacuum or at 1 atm. A small number of Cu-Se and In-Se compounds was observed during the early stage of selenization, and single-phase CuInSe 2 was more easily formed in vacuum than at atmospheric pressure. Therefore, CuInSe 2 films selenized in vacuum showed larger grain sizes, smoother surfaces, and denser microstructures than those selenized at 1 atm

Non-toxic novel route synthesis and characterization of nanocrystalline ZnS{sub x}Se{sub 1−x} thin films with tunable band gap characteristics

Energy Technology Data Exchange (ETDEWEB)

Agawane, G.L., E-mail: agawaneganesh@gmail.com [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Shin, Seung Wook [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Vanalakar, S.A. [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Moholkar, A.V. [Electrochemical Mat. Lab., Department of Physics, Shivaji University, Kolhapur 416-004 (India); Gurav, K.V.; Suryawanshi, M.P. [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Lee, Jeong Yong [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Yun, Jae Ho, E-mail: yunjh92@kier.re.kr [Photovoltaic Research Group, KIER, Jang-Dong, Yuseong-Gu, Daejeon 305-343 (Korea, Republic of); Kim, Jin Hyeok, E-mail: jinhyeok@chonnam.ac.kr [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of)

2014-07-01

Highlights: • A simple, inexpensive, and non-toxic CBD route is used to deposit ZnS thin films. • The ZnS{sub x}Se{sub 1−x} thin films formation takes place via annealing of ZnS thin films in Se atmosphere. • S/(S + Se) ratio found to be temperature dependent and easy tuning of band gap has been done by Se atom deposition. - Abstract: An environmentally benign chemical bath deposition (CBD) route was employed to deposit zinc sulfide (ZnS) thin films. The CBD-ZnS thin films were further selenized in a furnace at various temperatures viz. 200, 300, 400, and 500 °C and the S/(S + Se) ratio was found to be dependent on the annealing temperature. The effects of S/(S + Se) ratio on the structural, compositional and optical properties of the ZnS{sub x}Se{sub 1−x} (ZnSSe) thin films were investigated. EDS analysis showed that the S/(S + Se) ratio decreased from 0.8 to 0.6 when the film annealing temperature increased from 200 to 500 °C. The field emission scanning electron microscopy and atomic force microscopy studies showed that all the films were uniform, pin hole free, smooth, and adhered well to the glass substrate. The X-ray diffraction study on the ZnSSe thin films showed the formation of the cubic phase, except for the unannealed ZnSSe thin film, which showed an amorphous phase. The X-ray photoelectron spectroscopy revealed Zn-S, Zn-Se, and insignificant Zn-OH bonds formation from the Zn 2p{sub 3/2}, S 2p, Se 3d{sub 5/2}, and O 1s atomic states, respectively. The ultraviolet–visible spectroscopy study showed ∼80% transmittance in the visible region for all the ZnSSe thin films having various absorption edges. The tuning of the band gap energy of the ZnSSe thin films was carried out by selenizing CBD-ZnS thin films, and as the S/(S + Se) ratio decreased from 0.8 to 0.6, the band gap energy decreased from 3.20 to 3.12 eV.

Room temperature deposition of ZnSe thin films by successive ionic layer adsorption and reaction (SILAR) method

International Nuclear Information System (INIS)

Kale, R.B.; Lokhande, C.D.

2004-01-01

The zinc selenide (ZnSe) thin films are deposited onto glass substrate using relatively simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method. The films are deposited using zinc acetate sodium selenosulphate precursors. The concentration, pH, immersion and rinsing times and number of immersion cycles have been optimized to obtain good quality ZnSe thin films. The X-ray diffraction (XRD) study and scanning electron microscopy (SEM) studies reveals nanocrystalline nature alongwith some amorphous phase present in ZnSe thin films. Energy dispersive X-ray (EDAX) analysis shows that the films are Se deficient. From optical absorption data, the optical band gap 'E g ' for as-deposited thin film was found to be 2.8 eV and electrical resistivity in the order of 10 7 Ω cm

Ultrasmall, water dispersible, TWEEN80 modified Yb:Er:NaGd(WO4)2 nanoparticles with record upconversion ratiometric thermal sensitivity and their internalization by mesenchymal stem cells

Science.gov (United States)

Cascales, Concepción; Paíno, Carlos L.; Bazán, Eulalia; Zaldo, Carlos

2017-05-01

This work presents the synthesis by coprecipitation of diamond shaped Yb:Er:NaGd(WO4)2 crystalline nanoparticles (NPs) with diagonal dimensions in the 5-7 nm × 10-12 nm range which have been modified with TWEEN80 for their dispersion in water, and their interaction with mesenchymal stem cells (MSCs) proposed as cellular NP vehicles. These NPs belong to a large family of tetragonal Yb:Er:NaT(XO4)2 (T = Y, La, Gd, Lu; X = Mo, W) compounds with green (2H11/2 + 4S3/2 → 4I15/2) Er-related upconversion (UC) efficiency comparable to that of Yb:Er:β-NaYF4 reference compound, but with a ratiometric thermal sensitivity (S) 2.5-3.5 times larger than that of the fluoride. At the temperature range of interest for biomedical applications (˜293-317 K/20-44 °C) S = 108-118 × 10-4 K-1 for 20 at%Yb:5 at%Er:NaGd(WO4)2 NPs, being the largest values so far reported using the 2H11/2/4S3/2 Er intensity ratiometric method. Cultured MSCs, incubated with these water NP emulsions, internalize and accumulate the NPs enclosed in endosomes/lysosomes. Incubations with up to 10 μg of NPs per ml of culture medium maintain cellular metabolism at 72 h. A thermal assisted excitation path is discussed as responsible for the UC behavior of Yb:Er:NaT(XO4)2 compounds.

A low temperature study of antiferromagnetic YbVO{sub 4} by NMR thermally detected by nuclear orientation

Energy Technology Data Exchange (ETDEWEB)

Hutchison, W.D.; Prandolini, M.J.; Harker, S.J.; Chaplin, D.H. [Australian Defence Force Academy, School of Physics, University College, University of New South Wales (Australia); Bowden, G.J. [University of New South Wales, School of Physics (Australia); Bleaney, B. [Clarendon Laboratory (United Kingdom)

1999-09-15

NMR-TDNO results using an external {sup 60}CoCo (hcp) nuclear orientation thermometer for non-irradiated, single crystal, antiferromagnetic YbVO{sub 4} are compared with those obtained earlier with neutron activated samples using both internal and external {gamma}-ray thermometers. Detailed comparisons are made for the {sup 171}Yb (I=1/2, 14.31% abundant) stable nucleus. This strongly asymmetric, largely homogeneous, resonance lineshape was retained and is readily power broadened. Extremely broad, field-dependent homogeneous thermometric responses are observed in the expected frequency range for the quadrupolar stable nucleus {sup 173}Yb (I=5/2, 16.13% abundant) for both irradiated and non-irradiated samples.

Crystal structure of NaPr(SeO4)2

International Nuclear Information System (INIS)

Ovanisyan, S.M.; Iskhakova, L.D.

1989-01-01

NaPr(SeO 4 ) 2 structure is decoded (autodiffractometer CAD-4). Triclinic cell parameters are as follows: a=6.639(2), b=7.118(1), c=7.36(1) A, α=99.16(2) deg, β=96.93(2) deg, γ=89.77 (3) deg, p.gr. P1-bar, Z=2. Structure is of carcass type, built on CaSO 4 anhydride structure base with 2Ca→TR 3+ +Na + -type ordered substitution. Structural comparative crystallochemical analysis of anhydride and NaPr(SeO 4 ) 2 and NaNd(SO 4 ) 2 isostructural double salts is carried out

Passively Q-switched microchip Er, Yb:YAl3(BO3)4 diode-pumped laser.

Science.gov (United States)

Kisel, V E; Gorbachenya, K N; Yasukevich, A S; Ivashko, A M; Kuleshov, N V; Maltsev, V V; Leonyuk, N I

2012-07-01

We report, for the first time to our knowledge, a diode-pumped cw and passively Q-switched microchip Er, Yb:YAl(3)(BO(3))(4) laser. A maximal output power of 800 mW at 1602 nm in the cw regime was obtained at an absorbed pump power of 7.7 W. By using Co(2+):MgAl(2)O(4) as a saturable absorber, a TEM(00)-mode Q-switched average output power of 315 mW was demonstrated at 1522 nm, with pulse duration of 5 ns and pulse energy of 5.25 μJ at a repetition rate of 60 kHz.

Synthesis, Structural Characterization and Up-Conversion Luminescence Properties of NaYF4:Er3+,Yb3+@MOFs Nanocomposites

Science.gov (United States)

Giang, Lam Thi Kieu; Marciniak, Lukasz; Huy, Tran Quang; Vu, Nguyen; Le, Ngo Thi Hong; Binh, Nguyen Thanh; Lam, Tran Dai; Minh, Le Quoc

2017-10-01

This paper describes a facile synthesis of NaYF4:Er3+,Yb3+ nanoparticles embraced in metal-organic frameworks (MOFs), known as NaYF4:Er3+, Yb3+@MOFs core/shell nanostructures, by using iron(III) carboxylate (MIL-100) and zeolitic imidazolate frameworks (ZIF-8). Morphological, structural and optical characterization of these nanostructures were investigated by field emission-scanning electron microscopy, Fourier transform infrared spectroscopy, x-ray diffraction, and up-conversion luminescence measurements. Results showed that spherical-shaped NaYF4:Er3+,Yb3+@MIL-100 nanocomposites with diameters of 150-250 nm, and rod-shaped NaYF4:Er3+,Yb3+@ZIF-8 nanocomposites with lengths of 300-550 nm, were successfully synthesized. Under a 980-nm laser excitation at room temperature, the NaYF4:Er3+,Yb3+@MOFs nanocomposites exhibited strong up-conversion luminescence with two emission bands in the green part of spectrum at 520 nm and 540 nm corresponding to the 2H11/2 → 4I15/2 and 4S3/2 → 4I15/2 transitions of Er3+ ions, respectively, and a red emission band at 655 nm corresponding to the 4F9/2 → 4I15/2 transition of Er3+ ions. The above properties of NaYF4:Er3+,Yb3+@MOFs make them promising candidates for applications in biotechnology.

Preparation and Characterization of Cu(In,GaSe2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films

Directory of Open Access Journals (Sweden)

Jiang Liu

2012-01-01

Full Text Available Se-containing precursor films with two different compositions were prepared by magnetron sputtering from and targets, and then were selenized using Se vapor. The effects of precursor composition and selenization temperature on the film properties were investigated. The results show that Se phase plays a critical role in film growth and electrical properties of CIGS films. The Cu-rich films exhibit different surface morphology and better crystallinity, as compared to the Cu-poor films. All the CIGS films exhibit p-type conductivity. The resistivity of the Cu-rich films is about three orders of magnitude lower than that of the Cu-poor films, which is attributed to the presence of p-type highly conductive Se phase.

Synthesis of green emission upconversion phosphor nanosheets (LaNb{sub 2}O{sub 7}) doped with Er{sup 3+} and Yb{sup 3+}

Energy Technology Data Exchange (ETDEWEB)

Takasugi, Soichi [Course of Science and Technology, Graduate School of Science and Technology, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Iida, Riku [Department of Chemistry, School of Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Tomita, Koji, E-mail: tomita@keyaki.cc.u-tokai.ac.jp [Department of Chemistry, School of Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Iwaoka, Michio [Course of Science and Technology, Graduate School of Science and Technology, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Department of Chemistry, School of Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Katagiri, Kiyofumi [Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima 739-8527 (Japan); Osada, Minoru [International Center for Materials Nano architectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Kakihana, Masato [Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

2016-05-15

LaNb{sub 2}O{sub 7}:Er{sup 3+},Yb{sup 3+} upconversion (UPC) phosphor nanosheets were prepared by exfoliating a KLaNb{sub 2}O{sub 7}:Er{sup 3+},Yb{sup 3+} layered compound. Highly crystalline nanosheets with a thickness and lateral size of 3.91 nm and approximately 300 nm, respectively, were obtained. The UPC emission intensity of the nanosheets was 7.6 times greater than that of mechanically milled particles (100–500 nm) of bulk KLaNb{sub 2}O{sub 7}:Er{sup 3+},Yb{sup 3+}. The UPC emission intensities of the nanosheets dispersed in different solvents (H{sub 2}O, D{sub 2}O, CH{sub 3}OH, CH{sub 2}Cl{sub 2}, and CCl{sub 4}) were measured, and the intensities were observed to decrease in the order CCl{sub 4}>CH{sub 2}Cl{sub 2}>D{sub 2}O>CH{sub 3}OH>H{sub 2}O. Because of the large surface area of the nanosheets, their emission intensity was decreased depending on the solvent's vibrational energy. - Highlights: • La{sub 0.45}Er{sub 0.05}Yb{sub 0.5}Nb{sub 2}O{sub 7} nanosheets were synthesized by a soft breakdown method (exfoliation). • The lateral size and thickness of the nanosheets were approximately 300 nm and approximately 3.91 nm, respectively. • The exfoliated nanosheets exhibited bright upconversion emission 7.6 times more intense than that of the milled sample (100–500 nm). • The nanosheets dispersed in solvents exhibited greatly different upconversion emission intensities depending on the solvent's vibrational energy.

Magnetic anisotropy of pure and doped YbInCu sub 4 compounds at ambient and high pressures

CERN Document Server

Mushnikov, N V; Rozenfeld, E V; Yoshimura, K; Zhang, W; Yamada, M; Kageyama, H

2003-01-01

The susceptibility and high-field magnetization of single-crystalline Yb sub 1 sub - sub x Y sub x InCu sub 4 (x = 0, 0.2 and 0.3) samples have been measured for different field orientations at ambient and high pressures. The compounds with x = 0 and 0.2 undergo a first-order valence transition from the intermediate-valence state to the trivalent state on increasing either temperature or magnetic field. The magnetization and susceptibility of these compounds have appreciable anisotropy in both states. The magnetic phase diagram of Yb sub 1 sub - sub x Y sub x InCu sub 4 determined at ambient pressure is also anisotropic, which is explained by the crystal-field calculations for the free Yb ion in the high-temperature phase. Moreover, the low-temperature magnetization process for x = 0.2 and 0.3 has been measured in low fields under high pressure; it shows anisotropic ferromagnetic ordering.

Conversion and quantum efficiency from ultraviolet light to near infrared emission in Yb{sup 3+}-doped pyrovanadates MZnV{sub 2}O{sub 7} (M = Ca, Sr, Ba)

Energy Technology Data Exchange (ETDEWEB)

Guan, Ying; Huang, Yanlin [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Tsuboi, Taiju; Huang, Wei [Jiangsu-Singapore Joint Research Center for Organic/Bio-Electronics and Information Displays and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816 (China); Chen, Cuili; Cai, Peiqing [Department of Physics and Interdisciplinary Program of Biomedical, Mechanical and Electrical Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of); Seo, Hyo Jin, E-mail: hjseo@pknu.ac.kr [Department of Physics and Interdisciplinary Program of Biomedical, Mechanical and Electrical Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of)

2014-12-15

Highlights: • Efficient convertors of Yb{sup 3+} doped pyrovanadates are prepared and characterized. • Broadband down-conversion from ultraviolet into near-infrared is realized. • High quantum efficiency of 18.5% can be reached. • Energy transfer from VO{sub 4} groups to Yb{sup 3+} ions is demonstrated on the base of the crystal structure. - Abstract: Yb{sup 3+}-doped CaZnV{sub 2}O{sub 7}, SrZnV{sub 2}O{sub 7} and BaZnV{sub 2}O{sub 7} were synthesized via the solid-state reaction. The polycrystalline samples were investigated by XRD and SEM measurements. The reflectance spectra, photoluminescence (PL) excitation and emission spectra, the absolute quantum efficiency (QE) of the IR emission (900–1100 nm) were measured. The efficient conversion from ultraviolet (UV) light to near-infrared (NIR) emission has been demonstrated in the Yb{sup 3+}-doped pyrovanadates by the broadband down conversion from VO{sub 4}{sup 3−} to Yb{sup 3+} ions. Under UV light excitation, an intense NIR emission around 1000 nm ascribed to the {sup 2}F{sub 5/2} → {sup 2}F{sub 7/2} transition of Yb{sup 3+} ions has been observed, which just corresponds to the spectral response of Si solar cells. The NIR emission efficiency is observed to depend on the lattice of pyrovanadate. The mechanism of the NIR emission ascribed to energy transfer is discussed by taking into account the experimental results and the crystal structures.

Enhancement of electron transfer from CdSe core/shell quantum dots to TiO2 films by thermal annealing

International Nuclear Information System (INIS)

Shao, Cong; Meng, Xiangdong; Jing, Pengtao; Sun, Mingye; Zhao, Jialong; Li, Haibo

2013-01-01

We demonstrated the enhancement of electron transfer from CdSe/ZnS core/shell quantum dots (QDs) to TiO 2 films via thermal annealing by means of steady-state and time-resolved photoluminescence (PL) spectroscopy. The significant decrease in PL intensities and lifetimes of the QDs on TiO 2 films was clearly observed after thermal annealing at temperature ranging from 100 °C to 300 °C. The obtained rates of electron transfer from CdSe core/shell QDs with red, yellow, and green emissions to TiO 2 films were significantly enhanced from several times to an order of magnitude (from ∼10 7 s −1 to ∼10 8 s −1 ). The improvement in efficiencies of electron transfer in the TiO 2 /CdSe QD systems was also confirmed. The enhancement could be considered to result from the thermal annealing reduced distance between CdSe QDs and TiO 2 films. The experimental results revealed that thermal annealing would play an important role on improving performances of QD based optoelectronic devices. -- Highlights: • Annealing-induced enhancement of electron transfer from CdSe to TiO 2 is reported. • CdSe QDs on TiO 2 and SiO 2 films are annealed at various temperatures. • Steady-state and time-resolved PL spectroscopy of CdSe QDs is studied. • The enhancement is related to the reduced distance between CdSe QDs and TiO 2

Sintering effect on the optoelectronic characteristics of HgSe nanoparticle films on plastic substrates

International Nuclear Information System (INIS)

Byun, Kwangsub; Cho, Kyoungah; Kim, Sangsig

2010-01-01

The optoelectronic characteristics of HgSe nanoparticle films spin-coated on flexible plastic substrates are investigated under the illumination of 1.3 μm wavelength light. The sintering process improves the optoelectronic characteristics of the HgSe nanoparticle films. The photocurrent of the sintered HgSe nanoparticle films under the illumination of 1.3 μm wavelength light is approximately 20 times larger in magnitude than that of the non-sintered films in air at room temperature. Moreover, the endurance of the flexible optoelectronic device investigated by the continuous substrate bending test reveals that the photocurrent efficiency changes negligibly up to 250 cycles.

Synthesis and characterization of the novel rare earth orthophosphates Y0.5Er0.5PO4 and Y0.5Yb0.5PO4

International Nuclear Information System (INIS)

Schildhammer, Daniel; Petschnig, Lucas L.; Fuhrmann, Gerda; Heymann, Gunter; Schottenberger, Herwig; Huppertz, Hubert; Tribus, Martina

2016-01-01

The new mixed rare earth (RE) orthophosphates Y 0.5 Er 0.5 PO 4 and Y 0.5 Yb 0.5 PO 4 were synthesized by a classical solid state reaction in an electrical furnace at 1200 C. As starting materials, the corresponding rare earth oxides and diammonium hydrogen phosphate were used. The powder diffraction analyses revealed that the new compounds Y 0.5 Er 0.5 PO 4 and Y 0.5 Yb 0.5 PO 4 crystallize in a zircon-type structure being isostructural with the rare earth orthophosphate YPO 4 . Y 0.5 Er 0.5 PO 4 and Y 0.5 Yb 0.5 PO 4 crystallize in the tetragonal space group I4 1 /amd (no. 141) with four formula units in the unit cell. The structural parameters based on Rietveld refinements are a = 687.27(2), c = 601.50(2) pm, V = 0.28412(1) nm 3 , R p = 0.0143, and R wp = 0.0186 (all data) for Y 0.5 Er 0.5 PO 4 and a = 684.61(2), c = 599.31(2) pm, V = 0.28089(2) nm 3 , R p = 0.0242, and R wp = 0.0313 (all data) for Y 0.5 Yb 0.5 PO 4 . Furthermore, the structure of Y 0.5 Er 0.5 PO 4 was refined from single-crystal X-ray diffraction data: a = 687.78(5), c = 601.85(4) pm, V = 0.28470(5) nm 3 , R 1 = 0.0165, and wR 2 = 0.0385 (all data). In both compounds, the rare earth metal ions are eightfold coordinated by oxygen atoms, forming two unique interlocking tetrahedra with two individual RE-O distances. The tetrahedral phosphate groups [PO 4 ] 3- are slightly distorted in both compounds. The individual rare earth ions share a common position (Wyckoff site 4a). The presence of two rare earth ions in the structures of the new orthophosphates Y 0.5 Er 0.5 PO 4 and Y 0.5 Yb 0.5 PO 4 was additionally confirmed by single-crystal EDX spectroscopy revealing a ratio of 1:1.

Fabrication and Photocatalytic Properties of ZnSe Nanorod Films

Directory of Open Access Journals (Sweden)

Jiajia Yin

2016-01-01

Full Text Available ZnSe nanorod films grown on fused quartz glass substrates via a simple two-step synthesis protocol were demonstrated to be environmentally safe and effective recyclable photocatalysts. These films showed greatly enhanced photocatalytic activity compared to pulsed laser deposition ZnSe films in the degradation of methyl orange dye solutions. The well-crystalized ZnSe nanorods had a length of 15 µm and a diameter of 200 nm and were densely grown on the substrate. The morphology, crystal structure, crystal phase, and photophysical properties of the ZnSe nanorod films were investigated using field-emission scanning electron microscopy (FE-SEM, UV-Vis spectroscopy, X-ray diffraction (XRD, transmission electron microscopy (TEM, and high resolution transmission electron microscopy (HRTEM.

Recombination luminescence and trap levels in undoped and Al-doped ZnO thin films on quartz and GaSe (0 0 0 1) substrates

Energy Technology Data Exchange (ETDEWEB)

Evtodiev, I. [Moldova State University, 60 A. Mateevici Str., Chisinau, MD 2009, Republic of Moldova (Moldova, Republic of); Caraman, I. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania); Leontie, L., E-mail: lleontie@uaic.ro [Alexandru Ioan Cuza University of Iasi, Bd. Carol I, Nr. 11, RO 700506 Iasi (Romania); Rusu, D.-I. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania); Dafinei, A. [Faculty of Physics, University of Bucharest, Platforma Magurele, Str. Fizicienilor nr. 1, CP Mg - 11, Bucharest-Magurele, RO 76900 (Romania); Nedeff, V.; Lazar, G. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania)

2012-03-15

Highlights: Black-Right-Pointing-Pointer ZnO films on GaSe create electron trapping states and PL recombination levels. Black-Right-Pointing-Pointer Zn and Al diffusion in GaSe produces low-energy widening of its PL emission. Black-Right-Pointing-Pointer ZnO:Al films on GaSe lamellas are suitable for gas-discharge lamp applications. -- Abstract: Photoluminescence spectra of ZnO and ZnO:Al (1.00, 2.00 and 5.00 at.%) films on GaSe (0 0 0 1) lamellas and amorphous quartz substrates, obtained by annealing, at 700 K, of undoped and Al-doped metal films, are investigated. For all samples, the nonequilibrium charge carriers recombine by radiative band-to-band transitions with energy of 3.27 eV, via recombination levels created by the monoionized oxygen atoms, forming the impurity band laying in the region 2.00 - 2.70 eV. Al doping induces an additional recombination level at 1.13 eV above the top of the valence band of ZnO films on GaSe substrates. As a result of thermal diffusion of Zn and Al into the GaSe interface layer from ZnO:Al/GaSe heterojunction, electron trap levels located at 0.22 eV and 0.26 eV below the conduction band edge of GaSe, as well as a deep recombination level, responsible for the luminescent emission in the region 1.10 - 1.40 eV, are created.

Preparation and luminescence properties of LaPO{sub 4}:Er,Yb nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Jung, Ha-Kyun [Advanced Materials Division, Korea Research Institute of Chemical Technology, P.O. Box 107, Yuseong, Daejeon 305-600 (Korea, Republic of)]. E-mail: hakyun@krict.re.kr; Oh, Jae-Suk [Advanced Materials Division, Korea Research Institute of Chemical Technology, P.O. Box 107, Yuseong, Daejeon 305-600 (Korea, Republic of); Seok, Sang-Il [Advanced Materials Division, Korea Research Institute of Chemical Technology, P.O. Box 107, Yuseong, Daejeon 305-600 (Korea, Republic of); Lee, Tack-Hyuck [Department of Chemistry, Paichai University, Daejeon 302-735 (Korea, Republic of)

2005-09-15

For possible applications as optical amplification materials in telecommunications, LaPO{sub 4}:Er,Yb nanoparticles were synthesized in a solution system and their properties were investigated by various spectroscopic techniques. The prepared nanoparticles are single-phased and present the monazite structure, the particle size being about 5 nm with a narrow size distribution. Also, it was confirmed by EA and FT-IR analyses that the surface of nanoparticles is coated with the solvent molecules used in the synthesis reaction, which possibly prevents them from agglomerating. In the NIR region, the emission of the LaPO{sub 4}:Er particles is very weak due to an efficient quenching of the {sup 4}I{sub 13/2}{yields}{sup 4}I{sub 15/2} emission by the hydroxyl groups adsorbed on the surface of the nanoparticles. On the other hand, the co-doping of Yb{sup 3+} as a sensitizer in the nanoparticles resulted in the increase of the emission intensity at 1539 nm due to the effective energy transfer from Yb{sup 3+} to Er{sup 3+}. In addition, the synthesized nanoparticles have exhibited good dispersibility into a polymer matrix and effective luminescence in the NIR region.

Processing of La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

Science.gov (United States)

Madakson, P.; Cuomo, J. J.; Yee, D. S.; Roy, R. A.; Scilla, G.

1988-03-01

High-quality La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 micron thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-(9 pct)Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, TEM, X-ray diffraction, and SIMS. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film.

Characteristics of CuInSe sub 2 thin films grown by the selenization method

CERN Document Server

Kim, S D; Adurodija, F O; Yoon, K H; Song, J S

1999-01-01

CuInSe sub 2 thin films were formed from a selenization of co-sputtered Cu-In alloy layers which consisted of only two phases, CuIn sub 2 and Cu sub 1 sub 1 In sub 9. A linear dependence of the Cu-In alloy film composition on the Cu/In sputtering power was found. The metallic layers were selenized in vacuum or at 1 atm. A small number of Cu-Se and In-Se compounds was observed during the early stage of selenization, and single-phase CuInSe sub 2 was more easily formed in vacuum than at atmospheric pressure. Therefore, CuInSe sub 2 films selenized in vacuum showed larger grain sizes, smoother surfaces, and denser microstructures than those selenized at 1 atm.

Near-yrast spectroscopy of 164Yb and neighbouring nuclei

International Nuclear Information System (INIS)

Jonsson, S.; Roy, H. and others.

1983-03-01

High-spin states in 164 Yb have been populated in the 152 Sm( 16 0,4n) and 150 Sm( 18 0,4n) reactions. From studies of γ-γ coincidences, γ-ray angular distributions and conversion electron measurements the level scheme has been constructed. The g-band and the S-band have been established to spin and parity 22(sup)+ and 26(sup)+, respectively, and the rotational sequences (π,α)=(-,1) 1 , (-,0) 1 and (-,0) 2 to 23(sup)-, 24(sup)- and 18(sup)-, respectively. The sidebands in 162 , 164 Er and 164 , 166 Yb are discussed. Constructed two-quasineutron configurations and cranked shell model (CSM) calculations are compared with the experimental results in 164 Yb. Residual interactions between quasiparticles in 164 Yb are calculated. Crossing frequencies and the gain in alignment are summarized for the Yb isotopes and the main features are discussed. (author)

Phonon and thermal properties of exfoliated TaSe{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yan, Z.; Jiang, C.; Renteria, J. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Pope, T. R.; Tsang, C. F.; Stickney, J. L.; Salguero, T. T., E-mail: salguero@uga.edu, E-mail: balandin@ee.ucr.edu [Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States); Goli, P. [Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Balandin, A. A., E-mail: salguero@uga.edu, E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States)

2013-11-28

We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe{sub 2}) obtained via the “graphene-like” mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E{sub 2g} peak of TaSe{sub 2} presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A{sub 1g} and E{sub 2g}, are −0.013 and −0.0097 cm{sup −1}/{sup o}C, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ∼16 W/mK to ∼9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe{sub 2} channels shows that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe{sub 2} and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials.

'Obligate' anaerobic Salmonella strain YB1 suppresses liver tumor growth and metastasis in nude mice.

Science.gov (United States)

Li, Chang-Xian; Yu, Bin; Shi, Lei; Geng, Wei; Lin, Qiu-Bin; Ling, Chang-Chun; Yang, Mei; Ng, Kevin T P; Huang, Jian-Dong; Man, Kwan

2017-01-01

The antitumor properties of bacteria have been demonstrated over the past decades. However, the efficacy is limited and unclear. Furthermore, systemic infection remains a serious concern in bacteria treatment. In this study, the effect of YB1, a rationally designed 'obligate' anaerobic Salmonella typhimurium strain, on liver tumor growth and metastasis in a nude mouse orthotopic liver tumor model was investigated. The orthotopic liver tumor model was established in nude mice using the hepatocellular carcinoma cell line MHCC-97L. Two weeks after orthotopic liver tumor implantation, YB1, SL7207 and saline were respectively administered through the tail vein of the mice. Longitudinal monitoring of tumor growth and metastasis was performed using Xenogen IVIS, and direct measurements of tumor volume were taken 3 weeks after treatment. In vitro , MHCC-97L and PLC cells were incubated with YB1 or SL7207 under anaerobic conditions. YB1 was observed to invade tumor cells and induce tumor cell apoptosis and death. The results revealed that all mice in the YB1 group were alive 3 weeks after YB1 injection while all mice in the SL7207 group died within 11 days of the SL7207 injection. The body weight decreased by ~9% on day 1 after YB1 injection and but subsequently recovered. Liver tumor growth and metastases were significantly inhibited following YB1 treatment. By contrast to the control group, a large number of Gr1-positive cells were detected on days 1 to 21 following YB1 treatment. Furthermore, YB1 also effectively invaded tumor cells and induced tumor cell apoptosis and death. In conclusion, YB1 suppressed liver tumor growth and metastasis in a nude mice liver tumor model. The potential mechanism may be through enhancing innate immune response and inducing tumor cell apoptosis and cell death.

Syntheses, structures, and properties of Ag4(Mo2O5)(SeO4)2(SeO3) and Ag2(MoO3)3SeO3

International Nuclear Information System (INIS)

Ling Jie; Albrecht-Schmitt, Thomas E.

2007-01-01

Ag 4 (Mo 2 O 5 )(SeO 4 ) 2 (SeO 3 ) has been synthesized by reacting AgNO 3 , MoO 3 , and selenic acid under mild hydrothermal conditions. The structure of this compound consists of cis-MoO 2 2+ molybdenyl units that are bridged to neighboring molybdenyl moieties by selenate anions and by a bridging oxo anion. These dimeric units are joined by selenite anions to yield zigzag one-dimensional chains that extended down the c-axis. Individual chains are polar with the C 2 distortion of the Mo(VI) octahedra aligning on one side of each chain. However, the overall structure is centrosymmetric because neighboring chains have opposite alignment of the C 2 distortion. Upon heating Ag 4 (Mo 2 O 5 )(SeO 4 ) 2 (SeO 3 ) looses SeO 2 in two distinct steps to yield Ag 2 MoO 4 . Crystallographic data: (193 K; MoKα, λ=0.71073 A): orthorhombic, space group Pbcm, a=5.6557(3), b=15.8904(7), c=15.7938(7) A, V=1419.41(12), Z=4, R(F)=2.72% for 121 parameters with 1829 reflections with I>2σ(I). Ag 2 (MoO 3 ) 3 SeO 3 was synthesized by reacting AgNO 3 with MoO 3 , SeO 2 , and HF under hydrothermal conditions. The structure of Ag 2 (MoO 3 ) 3 SeO 3 consists of three crystallographically unique Mo(VI) centers that are in 2+2+2 coordination environments with two long, two intermediate, and two short bonds. These MoO 6 units are connected to form a molybdenyl ribbon that extends along the c-axis. These ribbons are further connected together through tridentate selenite anions to form two-dimensional layers in the [bc] plane. Crystallographic data: (193 K; MoKα, λ=0.71073 A): monoclinic, space group P2 1 /n, a=7.7034(5), b=11.1485(8), c=12.7500(9) A, β=105.018(1) V=1002.7(2), Z=4, R(F)=3.45% for 164 parameters with 2454 reflections with I>2σ(I). Ag 2 (MoO 3 ) 3 SeO 3 decomposes to Ag 2 Mo 3 O 10 on heating above 550 deg. C. - Graphical abstract: A view of the one-dimensional [(Mo 2 O 5 )(SeO 4 ) 2 (SeO 3 )] 4- chains that extend down the c-axis in the structure of Ag 4 (Mo 2 O 5 )(SeO 4

Dependence of upconversion emission intensity on Yb3+ concentration in Er3+/Yb3+ co-doped flake shaped Y2(MoO4)3 phosphors

International Nuclear Information System (INIS)

Lu Weili; Cheng Lihong; Zhong Haiyang; Sun Jiashi; Wan Jing; Tian Yue; Chen Baojiu

2010-01-01

Yttrium molybdate phosphors with fixed Er 3+ and various Yb 3+ concentrations were synthesized via a co-precipitation method. The crystal structure and the morphology of the phosphor were characterized by means of x-ray diffraction and field-emission scanning electron microscopy. Under 980 nm excitation, red and green upconversion emissions centred at 660, 553 and 530 nm were observed. Quantitative analyses on the dependence of upconversion emission intensity on the working current of a laser diode (LD) indicated that two-photon processes are responsible for both red and green upconversion emissions in both cases of low and high Yb 3+ concentrations. The relationship between the emission intensity ratio of 2 H 11/2 → 4 I 15/2 to 4 S 3/2 → 4 I 15/2 and the working current of the LD was studied for the samples doped with low and high Yb 3+ concentrations. Finally, a set of rate equations was established based on the possible upconversion mechanism, and an empirical formula was proposed to describe the Yb 3+ concentration dependence of upconversion emission intensity; the empirical formula fits well with the experimental data.

Lattice parameter values and phase transitions for the Cu{sub 2}Cd{sub 1-z}Mn{sub z}SnSe{sub 4} and Cu{sub 2}Cd{sub 1-z}Fe{sub z}SnSe{sub 4} alloys