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Sample records for wire-compatible switching fabric

  1. Radiation-Tolerant, Space Wire-Compatible Switching Fabric, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Current and future programs of near-Earth and deep space exploration require the development of robust serial data transfer electronics within the spacecraft's...

  2. Radiation-Tolerant, Space Wire-Compatible Switching Fabric, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Current and future programs of near-Earth and deep space exploration require the development of faster and more reliable electronics with open system architectures...

  3. Internal Backpressure for Terabit Switch Fabrics

    DEFF Research Database (Denmark)

    Fagertun, Anna Manolova; Ruepp, Sarah Renée; Rytlig, Andreas

    2012-01-01

    This paper proposes and analyzes the efficiency of novel backpressure schemes for Terabit switch fabrics. The proposed schemes aim at buffer optimization under uniform traffic distribution with Bernoulli packet arrival process. Results show that a reduction of the needed maximum buffer capacity w...... with up to 47% can be achieved with switch-internal backpressure mechanisms at the expense of a small control overhead....

  4. Evaluation of Speedup and Expansion in Terabit Switch Fabrics

    DEFF Research Database (Denmark)

    Ruepp, Sarah Renée; Rytlig, Andreas; Berger, Michael Stübert

    2011-01-01

    This paper evaluates speedup and expansion in a multi-stage Terabit switch fabric. Single-stage switch fabrics, e.g. crossbar switches, are difficult to scale up to a Terabit system. Hence, a multi-stage switch fabric, where traffic can be distributed on different chips, offers a promising...... perspective. We evaluate buffer usage, number of out-of-sequence cells and fabric delay. Simulation results obtained in OPNET Modeler show that speedup outperforms expansion and that both approaches significantly gain from applying an output line speedup. By reducing the buffer usage in the middle stage...

  5. A Novel Silicon-based Wideband RF Nano Switch Matrix Cell and the Fabrication of RF Nano Switch Structures

    Directory of Open Access Journals (Sweden)

    Yi Xiu YANG

    2011-12-01

    Full Text Available This paper presents the concept of RF nano switch matrix cell and the fabrication of RF nano switch. The nano switch matrix cell can be implemented into complex switch matrix for signal routing. RF nano switch is the decision unit for the matrix cell; in this research, it is fabricated on a tri-layer high-resistivity-silicon substrate using surface micromachining approach. Electron beam lithography is introduced to define the pattern and IC compatible deposition process is used to construct the metal layers. Silicon-based nano switch fabricated by IC compatible process can lead to a high potential of system integration to perform a cost effective system-on-a-chip solution. In this paper, simulation results of the designed matrix cell are presented; followed by the details of the nano structure fabrication and fabrication challenges optimizations; finally, measurements of the fabricated nano structure along with analytical discussions are also discussed.

  6. Design and Fabrication of 1 × 2 Nanophotonic Switch

    Directory of Open Access Journals (Sweden)

    Asaf Shahmoon

    2010-01-01

    Full Text Available We present the design and the fabrication of a novel 1×2 nanophotonic switch. The switch is a photonic T-junction in which a gold nano particle is being positioned in the junction using the tip of an atomic force microscope (AFM. The novelty of this 1×2 switch is related to its ability to control the direction of wave that propagates along a photonic structure. The selectivity of the direction is determined by a gold nanoparticle having dimension of a few tens of nanometer. This particle can be shifted. The shift of the gold nano particle can be achieved by applying voltage or by illuminating it with a light source. The shifts of the particle, inside the air gap, direct the input beam ones to the left output of the junction and once to its right output. Three types of simulations have been done in order to realize the photonic T-junction, and they are as follows: photonic crystal structures, waveguide made out of PMMA, and a silicon waveguide.

  7. Packetisation in Optical Packet Switch Fabrics using adaptive timeout values

    DEFF Research Database (Denmark)

    Mortensen, Brian Bach

    2006-01-01

    Hybrid electro-optical packet switches utilize optics in the backplane to switch optical packets from inputs to outputs on electronic line cards. The optical packets are traditionally considerably larger than minimum size IP packets. IP packets entering the switch must be formatted (segmented) an...

  8. Switching Fabric Based on Multi-Level LVDS Compatible Interconnect, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Switching fabric (SF) is the key component of the next generation of back plane interconnects. Low power, TID and SEU resistant and high bandwidth upgradeable...

  9. Switching Fabric based on Multi-Level LVDS Compatible Interconnect, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The switching fabric (SF) is a key component of the next generation back plane interconnects. Extremely low-power, radiation-hardened, high-bandwidth upgradeable...

  10. Single-Mask Fabrication of Temperature Triggered MEMS Switch for Cooling Control in SSL System

    NARCIS (Netherlands)

    Wei, J.; Ye, H.; Van Zeijl, H.W.; Sarro, P.M.; Zhang, G.Q.

    2012-01-01

    A micro-electro-mechanical-system (MEMS) based, temperature triggered, switch is developed as a cost-effective solution for smart cooling control of solid-state-lighting systems. The switch (1.0x0.4 mm2) is embedded in a silicon substrate and fabricated with a single-mask 3D micro-machining process.

  11. Design and fabrication of a silicon-based MEMS acceleration switch working lower than 10 g

    Science.gov (United States)

    Hwang, Jeongki; Ryu, Daeho; Park, Chihyun; Jang, Seung-gyo; Lee, Chung-il; Kim, Yong-Kweon

    2017-06-01

    This paper reports a low-g MEMS acceleration switch with threshold acceleration below 10 g. The proposed switch is made of single-crystalline silicon for high thermal stability and stress-free structure. A vertical operation type is adopted to enable fine control of the contact surface during the fabrication process. The switch contains displacement-restricting structures in all directions for impact resistance and is packaged with anodic bonding process. The fabricated switches had an average proof mass, initial gap, and spring constant of 307.38 µg, 6.39 µm, and 3.29 N m-1, respectively. Height profile of the free-hanging proof mass was measured to show that the switch does not suffer from stress problems. In the electrostatic operation test, the contact resistance of the switch was varied with contact force and the minimum value was estimated to be 8.5 Ω. The response time of the switch was measured to be shorter than 1.2 ms. The fabricated switch operated more than 10 000 cycles without failure. For the thermal stability test, the switch was heated at 80 °C for 6 h and the switch operated successfully over 200 times. In the rotation-table experiment, the switch operated at 6.61 g and error analysis was carried out in the consideration of tangential force generated during the rotation-table experiment. From the experimental values, the tangential force was calculated as 2.375 µN and the resulting reduction in the initial switching gap was simulated as 0.32 µm. The reduced threshold acceleration thus was estimated to be 6.62 g, which agrees very well with the measured threshold acceleration value of 6.61 g.

  12. Tailoring design and fabrication of capacitive RF MEMS switches for K-band applications

    Science.gov (United States)

    Quaranta, Fabio; Persano, Anna; Capoccia, Giovanni; Taurino, Antonietta; Cola, Adriano; Siciliano, Pietro; Lucibello, Andrea; Marcelli, Romolo; Proietti, Emanuela; Bagolini, Alvise; Margesin, Benno; Bellutti, Pierluigi; Iannacci, Jacopo

    2015-05-01

    Shunt capacitive radio-frequency microelectromechanical (RF MEMS) switches were modelled, fabricated and characterized in the K-band domain. Design allowed to predict the RF behaviour of the switches as a function of the bridge geometric parameters. The modelled switches were fabricated on silicon substrate, using a surface micromachining approach. In addition to the geometric parameters, the material structure in the bridge-actuator area was modified for switches fabricated on the same wafer, thanks to the removal/addition of two technological steps of crucial importance for RF MEMS switches performance, which are the use of the sacrificial layer and the deposition of a floating metal layer on the actuator. Surface profilometry analysis was used to check the material layer structure in the different regions of the bridge area as well as to investigate the mechanical behaviour of the moveable bridge under the application of a loaded force. The RF behaviour of all the fabricated switches was measured, observing the impact on the isolation of the manipulation of the bridge size and of the variations in the fabrication process.

  13. Study of influence on micro-fabricated resistive switching organic ...

    Indian Academy of Sciences (India)

    current compliance (CC) is applied to 100 μA during I–V sweep. When the voltage goes to 0.8 V, the current increases rapidly which means the OFF state switches to the ON state. During the negative side I–V sweep, when the voltage goes to −2.2 V, the current decreases rapidly which means the ON state switches to the ...

  14. Study of influence on micro-fabricated resistive switching organic ...

    Indian Academy of Sciences (India)

    In this paper, a comparison of the interfacial electronic properties between Pt/Ir conductive atomic force microscopy (C-AFM) tip and ZrO2 organic array was carried out. A uniformed ZrO2 array was fabricated with a mean diameter of around 1 m using laser interference lithography. A C-AFM measurement set-up was built ...

  15. Novel magnetic wire fabrication process by way of nanoimprint lithography for current induced magnetization switching

    Directory of Open Access Journals (Sweden)

    Tsukasa Asari

    2017-05-01

    Full Text Available Nanoimprint lithography (NIL is an effective method to fabricate nanowire because it does not need expensive systems and this process is easier than conventional processes. In this letter, we report the Current Induced Magnetization Switching (CIMS in perpendicularly magnetized Tb-Co alloy nanowire fabricated by NIL. The CIMS in Tb-Co alloy wire was observed by using current pulse under in-plane external magnetic field (HL. We successfully observed the CIMS in Tb-Co wire fabricated by NIL. Additionally, we found that the critical current density (Jc for the CIMS in the Tb-Co wire fabricated by NIL is 4 times smaller than that fabricated by conventional lift-off process under HL = 200Oe. These results indicate that the NIL is effective method for the CIMS.

  16. Novel magnetic wire fabrication process by way of nanoimprint lithography for current induced magnetization switching

    Science.gov (United States)

    Asari, Tsukasa; Shibata, Ryosuke; Awano, Hiroyuki

    2017-05-01

    Nanoimprint lithography (NIL) is an effective method to fabricate nanowire because it does not need expensive systems and this process is easier than conventional processes. In this letter, we report the Current Induced Magnetization Switching (CIMS) in perpendicularly magnetized Tb-Co alloy nanowire fabricated by NIL. The CIMS in Tb-Co alloy wire was observed by using current pulse under in-plane external magnetic field (HL). We successfully observed the CIMS in Tb-Co wire fabricated by NIL. Additionally, we found that the critical current density (Jc) for the CIMS in the Tb-Co wire fabricated by NIL is 4 times smaller than that fabricated by conventional lift-off process under HL = 200Oe. These results indicate that the NIL is effective method for the CIMS.

  17. Design and Fabrication of a Strain-Powered Microelectromechanical System (MEMS) Switch

    Science.gov (United States)

    2014-09-01

    to describe our two main fabrication approaches in the Appendices. 1.1 Design The switch devices were designed in AutoCAD with variations in hinge...evaporation in the Evatec evaporator. Hinge anchoring after dry etching required an extension of the sacrificial Si layer through AutoCAD redesign and mask...anchored along this top edge. This required us to make an AutoCAD and mask design revision reducing the dimension of the second PVD step so that it did

  18. Conception, fabrication and characterization of a silicon based MEMS inertial switch with a threshold value of 5 g

    Science.gov (United States)

    Zhang, Fengtian; Wang, Chao; Yuan, Mingquan; Tang, Bin; Xiong, Zhuang

    2017-12-01

    Most of the MEMS inertial switches developed in recent years are intended for shock and impact sensing with a threshold value above 50 g. In order to follow the requirement of detecting linear acceleration signal at low-g level, a silicon based MEMS inertial switch with a threshold value of 5 g was designed, fabricated and characterized. The switch consisted of a large proof mass, supported by circular spiral springs. An analytical model of the structure stiffness of the proposed switch was derived and verified by finite-element simulation. The structure fabrication was based on a customized double-buried layer silicon-on-insulator wafer and encapsulated by glass wafers. The centrifugal experiment and nanoindentation experiment were performed to measure the threshold value as well as the structure stiffness. The actual threshold values were measured to be 0.1–0.3 g lower than the pre-designed value of 5 g due to the dimension loss during non-contact lithography processing. Concerning the reliability assessment, a series of environmental experiments were conducted and the switches remained operational without excessive errors. However, both the random vibration and the shock tests indicate that the metal particles generated during collision of contact parts might affect the contact reliability and long-time stability. According to the conclusion reached in this report, an attentive study on switch contact behavior should be included in future research.

  19. Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication

    Science.gov (United States)

    2016-09-27

    ARL-TR-7819 ● SEP 2016 US Army Research Laboratory Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs...Laboratory Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication by...Report 3. DATES COVERED (From - To) January 2016–September 2016 4. TITLE AND SUBTITLE Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs

  20. Design, simulation and fabrication of a novel contact-enhanced MEMS inertial switch with a movable contact point

    International Nuclear Information System (INIS)

    Cai Haogang; Ding Guifu; Yang Zhuoqing; Su Zhijuan; Zhou Jiansheng; Wang Hong

    2008-01-01

    A novel inertial switch based on a micro-electro-mechanical system (MEMS) was designed, which consists of three main parts: a proof mass as the movable electrode, a cross beam as the stationary electrode and a movable contact point to prolong the contact time. A MATLAB/Simulink model, which had been verified by comparison with ANSYS transient simulation, was built to simulate the dynamic response, based on which the contact-enhancing mechanism was confirmed and the dependence of threshold acceleration on the proof mass thickness was studied. The simulated dynamic responses under various accelerations exhibit satisfactory device behaviors: the switch-on time is prolonged under transient acceleration; the switch-on state is more continuous than the conventional design under long lasting acceleration. The inertial micro-switch was fabricated by multilayer electroplating technology and then tested by a drop hammer experiment. The test results indicate that the contact effect was improved significantly and a steady switch-on time of over 50 µs was observed under half-sine wave acceleration with 1 ms duration, in agreement with the dynamic simulation

  1. Macro-mechanics controls quantum mechanics: mechanically controllable quantum conductance switching of an electrochemically fabricated atomic-scale point contact.

    Science.gov (United States)

    Staiger, Torben; Wertz, Florian; Xie, Fangqing; Heinze, Marcel; Schmieder, Philipp; Lutzweiler, Christian; Schimmel, Thomas

    2018-01-12

    Here, we present a silver atomic-scale device fabricated and operated by a combined technique of electrochemical control (EC) and mechanically controllable break junction (MCBJ). With this EC-MCBJ technique, we can perform mechanically controllable bistable quantum conductance switching of a silver quantum point contact (QPC) in an electrochemical environment at room temperature. Furthermore, the silver QPC of the device can be controlled both mechanically and electrochemically, and the operating mode can be changed from 'electrochemical' to 'mechanical', which expands the operating mode for controlling QPCs. These experimental results offer the perspective that a silver QPC may be used as a contact for a nanoelectromechanical relay.

  2. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

    KAUST Repository

    Semple, James

    2017-01-02

    Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

  3. High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition

    Science.gov (United States)

    Chen, Zhe; Zhang, Feifei; Chen, Bing; Zheng, Yang; Gao, Bin; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng

    2015-02-01

    Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

  4. Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

    Science.gov (United States)

    Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

    2018-05-01

    Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

  5. Low-cost fabrication and polar-dependent switching uniformity of memory devices using alumina interfacial layer and Ag nanoparticle monolayer

    Directory of Open Access Journals (Sweden)

    Peng Xia

    2017-11-01

    Full Text Available A facile and low-cost process was developed for fabricating write-once-read-many-times (WORM Cu/Ag NPs/Alumina/Al memory devices, where the alumina passivation layer formed naturally in air at room temperature, whereas the Ag nanoparticle monolayer was in situ prepared through thermal annealing of a 4.5 nm Ag film in air at 150°C. The devices exhibit irreversible transition from initial high resistance (OFF state to low resistance (ON state, with ON/OFF ratio of 107, indicating the introduction of Ag nanoparticle monolayer greatly improves ON/OFF ratio by four orders of magnitude. The uniformity of threshold voltages exhibits a polar-dependent behavior, and a narrow range of threshold voltages of 0.40 V among individual devices was achieved upon the forward voltage. The memory device can be regarded as two switching units connected in series. The uniform alumina interfacial layer and the non-uniform distribution of local electric fields originated from Ag nanoparticles might be responsible for excellent switching uniformity. Since silver ions in active layer can act as fast ion conductor, a plausible mechanism relating to the formation of filaments sequentially among the two switching units connected in series is suggested for the polar-dependent switching behavior. Furthermore, we demonstrate both alumina layer and Ag NPs monolayer play essential roles in improving switching parameters based on comparative experiments.

  6. Low-cost fabrication and polar-dependent switching uniformity of memory devices using alumina interfacial layer and Ag nanoparticle monolayer

    Science.gov (United States)

    Xia, Peng; Li, Luman; Wang, Pengfei; Gan, Ying; Xu, Wei

    2017-11-01

    A facile and low-cost process was developed for fabricating write-once-read-many-times (WORM) Cu/Ag NPs/Alumina/Al memory devices, where the alumina passivation layer formed naturally in air at room temperature, whereas the Ag nanoparticle monolayer was in situ prepared through thermal annealing of a 4.5 nm Ag film in air at 150°C. The devices exhibit irreversible transition from initial high resistance (OFF) state to low resistance (ON) state, with ON/OFF ratio of 107, indicating the introduction of Ag nanoparticle monolayer greatly improves ON/OFF ratio by four orders of magnitude. The uniformity of threshold voltages exhibits a polar-dependent behavior, and a narrow range of threshold voltages of 0.40 V among individual devices was achieved upon the forward voltage. The memory device can be regarded as two switching units connected in series. The uniform alumina interfacial layer and the non-uniform distribution of local electric fields originated from Ag nanoparticles might be responsible for excellent switching uniformity. Since silver ions in active layer can act as fast ion conductor, a plausible mechanism relating to the formation of filaments sequentially among the two switching units connected in series is suggested for the polar-dependent switching behavior. Furthermore, we demonstrate both alumina layer and Ag NPs monolayer play essential roles in improving switching parameters based on comparative experiments.

  7. Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset

    Science.gov (United States)

    Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Gul, Jahan Zeb; Kim, Soo-Wan; Lim, Jong Hwan; Choi, Kyung Hyun

    2016-11-01

    Owing to the increasing interest in the nonvolatile memory devices, resistive switching based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS2) and polyvinyl alcohol (PVA) is explored in this work. As a proof of concept, we have demonstrated the fabrication of a memory device with the configuration of PET/Ag/MoS2-PVA/Ag via an all printed, hybrid, and state of the art fabrication approach. Bottom Ag electrodes, active layer of hybrid MoS2-PVA nanocomposite and top Ag electrode are deposited by reverse offset, electrohydrodynamic (EHD) atomization and electrohydrodynamic (EHD) patterning respectively. The fabricated device displayed characteristic bistable, nonvolatile and rewritable resistive switching behavior at a low operating voltage. A decent off/on ratio, high retention time, and large endurance of 1.28 × 102, 105 sec and 1000 voltage sweeps were recorded respectively. Double logarithmic curve satisfy the trap controlled space charge limited current (TCSCLC) model in high resistance state (HRS) and ohmic model in low resistance state (LRS). Bendability test at various bending diameters (50-2 mm) for 1500 cycles was carried out to show the mechanical robustness of fabricated device.

  8. Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology

    Science.gov (United States)

    Jiahui, Zhou; Hudong, Chang; Xufang, Zhang; Jingzhi, Yang; Guiming, Liu; Haiou, Li; Honggang, Liu

    2016-02-01

    A novel radio frequency (RF) switch device has been successfully fabricated using InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) technology. The device showed drain saturation currents of 250 mA/mm, a maximum transconductance of 370 mS/mm, a turn-on resistance of 0.72 mω·mm2 and a drain current on-off (Ion/Ioff) ratio of 1 × 106. The maximum handling power of on-state of 533 mW/mm and off-state of 3667 mW/mm is obtained. The proposed In0.4Ga0.6 As MOSFET RF switch showed an insertion loss of less than 1.8 dB and an isolation of better than 20 dB in the frequency range from 0.1 to 7.5 GHz. The lowest insertion loss and the highest isolation can reach 0.27 dB and more than 68 dB respectively. This study demonstrates that the InGaAs MOSFET technology has a great potential for RF switch application. Project supported by the National Natural Science Foundation of China (Nos. 61274077, 61474031), the Guangxi Natural Science Foundation (No. 2013GXNSFGA019003), the Guangxi Department of Education Project (No. 201202ZD041), the Guilin City Technology Bureau (Nos. 20120104-8, 20130107-4), the China Postdoctoral Science Foundation Funded Project (Nos. 2012M521127, 2013T60566), the National Basic Research Program of China (Nos. 2011CBA00605, 2010CB327501), the Innovation Project of GUET Graduate Education (Nos. GDYCSZ201448, GDYCSZ201449), the State key Laboratory of Electronic Thin Films and Integrated Devices, UESTC (No. KFJJ201205), and the Guilin City Science and Technology Development Project (Nos. 20130107-4, 20120104-8).

  9. Effect of laser beam conditioning on fabrication of clean micro-channel on stainless steel 316L using second harmonic of Q-switched Nd:YAG laser

    Science.gov (United States)

    Singh, Sanasam Sunderlal; Baruah, Prahlad Kr; Khare, Alika; Joshi, Shrikrishna N.

    2018-02-01

    Laser micromachining of metals for fabrication of micro-channels generate ridge formation along the edges accompanied by ripples along the channel bed. The ridge formation is due to the formation of interference pattern formed by back reflections from the beam splitter and other optical components involved before focusing on the work piece. This problem can be curtailed by using a suitable aperture or Iris diaphragm so as to cut the unwanted portion of the laser beam before illuminating the sample. This paper reports an experimental investigation on minimizing this problem by conditioning the laser beam using an Iris diaphragm and using optimum process parameters. In this work, systematic experiments have been carried out using the second harmonic of a Q-switched Nd:YAG laser to fabricate micro-channels. Initial experiments revealed that formation of ridges along the sides of micro-channel can easily be minimized with the help of Iris diaphragm. Further it is noted that a clean micro-channel of depth 43.39 μm, width up to 64.49 μm and of good surface quality with average surface roughness (Ra) value of 370 nm can be machined on stainless steel (SS) 316L by employing optimum process condition: laser beam energy of 30 mJ/pulse, 11 number of laser scans and scan speed of 169.54 μm/s with an opening of 4 mm diameter of Iris diaphragm in the path of the laser beam.

  10. Fast switching of frequency modulation twisted nematic liquid crystal display fabricated by doping nanoparticles and its mechanism (Invited Paper)

    Science.gov (United States)

    Kobayashi, Shunsuke; Miyama, Tomohiro; Sakai, Yoshio; Shiraki, Hiroyuki; Shiraishi, Yukihide; Toshima, Naoki

    2005-04-01

    TN-LCDs fabricated by doping metal nanoparticles of such as Pd, Ag, Au, or Ag-Pd composite are shown to exhibit a frequency modulation electro-optic response with short response time of ms or sub-ms order. These devices are called FM-LCDs. The frequency range spreads from 40 Hz to 2 KHz around a dielectric relaxation frequency that increases with increasing the concentration of metal nanoparticles. This behavior is explained by the equivalent circuit model of heterogeneous dielectrics, for the first time, formulated by the present authors. Further, we discuss the origin of the fast response and the value of electrical conductivity of metal nanoparticles.

  11. Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application

    Science.gov (United States)

    Ani, M. H.; Helmi, F.; Herman, S. H.; Noh, S.

    2018-01-01

    Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electronic junction as a new type of memristor. Cu2O is a p-type semiconductor oxide, was used as the active layer of memristor. Cu/Cu2O/Au memristor was fabricated by thermal oxidation of copper foil, followed by sputtering of gold. Structural, morphological and memristive properties were characterized using XRD, FESEM, and current-voltage, I-V measurement respectively. Its memristivity was indentified by pinch hysteresis loop and measurement of high resistance state (HRS) and low resistance state (LRS) of the sample. The Cu/Cu2O/Au memristor demonstrates comparable performances to previous studies using other methods.

  12. Abacus switch: a new scalable multicast ATM switch

    Science.gov (United States)

    Chao, H. Jonathan; Park, Jin-Soo; Choe, Byeong-Seog

    1995-10-01

    This paper describes a new architecture for a scalable multicast ATM switch from a few tens to thousands of input ports. The switch, called Abacus switch, has a nonblocking memoryless switch fabric followed by small switch modules at the output ports; the switch has input and output buffers. Cell replication, cell routing, output contention resolution, and cell addressing are all performed distributedly in the Abacus switch so that it can be scaled up to thousnads input and output ports. A novel algorithm has been proposed to resolve output port contention while achieving input and output ports. A novel algorithm has been proposed to reolve output port contention while achieving input buffers sharing, fairness among the input ports, and multicast call splitting. The channel grouping concept is also adopted in the switch to reduce the hardware complexity and improve the switch's throughput. The Abacus switch has a regular structure and thus has the advantages of: 1) easy expansion, 2) relaxed synchronization for data and clock signals, and 3) building the switch fabric using existing CMOS technology.

  13. Coherent 40 Gb/s SP-16QAM and 80 Gb/s PDM-16QAM in an Optimal Supercomputer Optical Switch Fabric

    DEFF Research Database (Denmark)

    Karinou, Fotini; Borkowski, Robert; Zibar, Darko

    2013-01-01

    We demonstrate, for the first time, the feasibility of using 40 Gb/s SP-16QAM and 80 Gb/s PDM-16QAM in an optimized cell switching supercomputer optical interconnect architecture based on semiconductor optical amplifiers as ON/OFF gates.......We demonstrate, for the first time, the feasibility of using 40 Gb/s SP-16QAM and 80 Gb/s PDM-16QAM in an optimized cell switching supercomputer optical interconnect architecture based on semiconductor optical amplifiers as ON/OFF gates....

  14. A sustainable and green process for scouring of cotton fabrics using xylano-pectinolytic synergism: switching from noxious chemicals to eco-friendly catalysts.

    Science.gov (United States)

    Singh, Avtar; Kaur, Amanjot; Patra, Arun Kumar; Mahajan, Ritu

    2018-04-01

    The objective of this research was to develop an appropriate, eco-friendly, cost-effective bioscouring methodology for removing natural impurities from cotton fabric. Maximum bioscouring was achieved using 5.0 IU xylanase and 4.0 IU pectinase with material to liquid ratio of 1:15 in a 50 mM buffer (glycine-NaOH buffer, 1.0 mM EDTA and 1% Tween-80, pH 8.5) with a treatment time of 60 min at 50 °C and an agitation speed of 60 rpm. The bioscoured cotton fabrics showed a gain of 1.17% in whiteness, 3.23% in brightness and a reduction of 4.18% in yellowness in comparison to fabric scoured with an alkaline scouring method. Further, after bleaching, the whiteness, brightness and tensile strength of the bioscoured fabrics were increased by 2.18, 2.33 and 11.74% along with a decrease of 4.61% in yellowness of bioscoured plus bleached fabrics in comparison to chemically scoured plus bleached fabrics. From the results, it is clear that bioscouring is more efficient, energy saving and an eco-friendly process and has the potential to replace the environment-damaging scouring process with the xylano-pectinolytic bioscouring process.

  15. Amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.

    2013-04-01

    Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

  16. Low inductance gas switching.

    Energy Technology Data Exchange (ETDEWEB)

    Chavez, Ray; Harjes, Henry Charles III; Wallace, Zachariah; Elizondo, Juan E.

    2007-10-01

    The laser trigger switch (LTS) is a key component in ZR-type pulsed power systems. In ZR, the pulse rise time through the LTS is > 200 ns and additional stages of pulse compression are required to achieve the desired <100 ns rise time. The inductance of the LTS ({approx}500nH) in large part determines the energy transfer time through the switch and there is much to be gained in improving system performance and reducing system costs by reducing this inductance. The current path through the cascade section of the ZR LTS is at a diameter of {approx} 6-inches which is certainly not optimal from an inductance point of view. The LTS connects components of much greater diameter (typically 4-5 feet). In this LDRD the viability of switch concepts in which the diameter of cascade section is greatly increased have been investigated. The key technical question to be answered was, will the desired multi-channel behavior be maintained in a cascade section of larger diameter. This LDRD proceeded in 2 distinct phases. The original plan for the LDRD was to develop a promising switch concept and then design, build, and test a moderate scale switch which would demonstrate the key features of the concept. In phase I, a switch concept which meet all electrical design criteria and had a calculated inductance of 150 nH was developed. A 1.5 MV test switch was designed and fabrication was initiated. The LDRD was then redirected due to budgetary concerns. The fabrication of the switch was halted and the focus of the LDRD was shifted to small scale experiments designed to answer the key technical question concerning multi-channel behavior. In phase II, the Multi-channel switch test bed (MCST) was designed and constructed. The purpose of MCST was to provide a versatile, fast turn around facility for the study the multi-channel electrical breakdown behavior of a ZR type cascade switch gap in a parameter space near that of a ZR LTS. Parameter scans on source impedance, gap tilt, gap spacing and

  17. Integrated Optoelectronic Switching Technology for Fiber-Optic Communications Networks

    National Research Council Canada - National Science Library

    Fan, Regis

    1998-01-01

    .... most of the effort in optical amplifier switch modules have been focused on monolithic switches in which the entire device is fabricated on an InP substrate together with the semiconductor optical amplifiers (SOAs...

  18. Design, fabrication, testing and packaging of a silicon ...

    Indian Academy of Sciences (India)

    In this paper, we describe the fabrication, wafer level test- ing and packaging of a silicon on glass based RF MEMS switch fabricated using DRIE. The device is a SPST direct contact series switch. The silicon on glass fabrication process has been suc- cessfully adapted by a number of groups to fabricate MEMS devices such ...

  19. Pseudospark switches

    International Nuclear Information System (INIS)

    Billault, P.; Riege, H.; Gulik, M. van; Boggasch, E.; Frank, K.

    1987-01-01

    The pseudospark discharge is bound to a geometrical structure which is particularly well suited for switching high currents and voltages at high power levels. This type of discharge offers the potential for improvement in essentially all areas of switching operation: peak current and current density, current rise, stand-off voltage, reverse current capability, cathode life, and forward drop. The first pseudospark switch was built at CERN at 1981. Since then, the basic switching characteristics of pseudospark chambers have been studied in detail. The main feature of a pseudospark switch is the confinement of the discharge plasma to the device axis. The current transition to the hollow electrodes is spread over a rather large surface area. Another essential feature is the easy and precise triggering of the pseudospark switch from the interior of the hollow electrodes, relatively far from the main discharge gap. Nanosecond delay and jitter values can be achieved with trigger energies of less than 0.1 mJ, although cathode heating is not required. Pseudospark gaps may cover a wide range of high-voltage, high-current, and high-pulse-power switching at repetition rates of many kilohertz. This report reviews the basic researh on pseudospark switches which has been going on at CERN. So far, applications have been developed in the range of thyratron-like medium-power switches at typically 20 to 40 kV and 0.5 to 10 kA. High-current pseudospark switches have been built for a high-power 20 kJ pulse generator which is being used for long-term tests of plasma lenses developed for the future CERN Antiproton Collector (ACOL). The high-current switches have operated for several hundred thousand shots, with 20 to 50 ns jitter at 16 kV charging voltage and more than 100 kA peak current amplitude. (orig.)

  20. Switching antidepressants

    African Journals Online (AJOL)

    depressive disorder, with response rates of 50-60%. Switching within or between classes of antidepressants is often required in patients with an insufficient response to SSRIs.12 Because they share a similar mechanism of action, the immediate substitution of one SSRI for another is probably the easiest switching option.

  1. Bipolar resistive switching in different plant and animal proteins

    KAUST Repository

    Bag, A.

    2014-06-01

    We report bipolar resistive switching phenomena observed in different types of plant and animal proteins. Using protein as the switching medium, resistive switching devices have been fabricated with conducting indium tin oxide (ITO) and Al as bottom and top electrodes, respectively. A clockwise bipolar resistive switching phenomenon is observed in all proteins. It is shown that the resistive switching phenomena originate from the local redox process in the protein and the ion exchange from the top electrode/protein interface.

  2. Magnetic switching

    International Nuclear Information System (INIS)

    Kirbie, H.C.

    1989-01-01

    Magnetic switching is a pulse compression technique that uses a saturable inductor (reactor) to pass pulses of energy between two capacitors. A high degree of pulse compression can be achieved in a network when several of these simple, magnetically switched circuits are connected in series. Individual inductors are designed to saturate in cascade as a pulse moves along the network. The technique is particularly useful when a single-pulse network must be very reliable or when a multi-pulse network must operate at a high pulse repetition frequency (PRF). Today, magnetic switches trigger spark gaps, sharpen the risetimes of high energy pulses, power large lasers, and drive high PRF linear induction accelerators. This paper will describe the technique of magnetic pulse compression using simple networks and design equations. A brief review of modern magnetic materials and of their role in magnetic switch design will be presented. 12 refs., 8 figs

  3. Neuromorphic atomic switch networks.

    Directory of Open Access Journals (Sweden)

    Audrius V Avizienis

    Full Text Available Efforts to emulate the formidable information processing capabilities of the brain through neuromorphic engineering have been bolstered by recent progress in the fabrication of nonlinear, nanoscale circuit elements that exhibit synapse-like operational characteristics. However, conventional fabrication techniques are unable to efficiently generate structures with the highly complex interconnectivity found in biological neuronal networks. Here we demonstrate the physical realization of a self-assembled neuromorphic device which implements basic concepts of systems neuroscience through a hardware-based platform comprised of over a billion interconnected atomic-switch inorganic synapses embedded in a complex network of silver nanowires. Observations of network activation and passive harmonic generation demonstrate a collective response to input stimulus in agreement with recent theoretical predictions. Further, emergent behaviors unique to the complex network of atomic switches and akin to brain function are observed, namely spatially distributed memory, recurrent dynamics and the activation of feedforward subnetworks. These devices display the functional characteristics required for implementing unconventional, biologically and neurally inspired computational methodologies in a synthetic experimental system.

  4. Design and Fabrication of Multimode Optical Switches.

    Science.gov (United States)

    1982-03-01

    down in a pure argon atmosphere (0.020 Torr partial pressure) from a mixed oxide sputtering target: 88’ Ino 3 and 12% SnO ,,. The resulting ITO film...control cir- cuits and other semiconductor IC logic circuits. We have not tested these multi-way structures but are confident that they will perform as

  5. MEMS switches having non-metallic crossbeams

    Science.gov (United States)

    Scardelletti, Maximillian C (Inventor)

    2009-01-01

    A RF MEMS switch comprising a crossbeam of SiC, supported by at least one leg above a substrate and above a plurality of transmission lines forming a CPW. Bias is provided by at least one layer of metal disposed on a top surface of the SiC crossbeam, such as a layer of chromium followed by a layer of gold, and extending beyond the switch to a biasing pad on the substrate. The switch utilizes stress and conductivity-controlled non-metallic thin cantilevers or bridges, thereby improving the RF characteristics and operational reliability of the switch. The switch can be fabricated with conventional silicon integrated circuit (IC) processing techniques. The design of the switch is very versatile and can be implemented in many transmission line mediums.

  6. Combining optics and SDN to enable true hybrid integration of electronic and photonic switching solutions

    DEFF Research Database (Denmark)

    Guelbenzu, Gonzalo; Miao, Wang; Ben-Itzhak, Yaniv

    2017-01-01

    We present two hybrid fabrics integrating optical and electronic switches with SDN, and a novel approach improving the scaling of fast optical switches. C-Share reroute flows through optical switches increasing network performance. E-WDM exploits the optical switch transparency by emulating...

  7. Switched on!

    CERN Multimedia

    2008-01-01

    Like a star arriving on stage, impatiently followed by each member of CERN personnel and by millions of eyes around the world, the first beam of protons has circulated in the LHC. After years in the making and months of increasing anticipation, today the work of hundreds of people has borne fruit. WELL DONE to all! Successfully steered around the 27 kilometres of the world’s most powerful particle accelerator at 10:28 this morning, this first beam of protons circulating in the ring marks a key moment in the transition from over two decades of preparation to a new era of scientific discovery. "It’s a fantastic moment," said the LHC project leader Lyn Evans, "we can now look forward to a new era of understanding about the origins and evolution of the universe". Starting up a major new particle accelerator takes much more than flipping a switch. Thousands of individual elements have to work in harmony, timings have to be synchronize...

  8. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, M.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de

    2012-01-01

    The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  9. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, Martijn; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.

    The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  10. Fast and low power Michelson interferometer thermo-optical switch on SOI.

    Science.gov (United States)

    Song, Junfeng; Fang, Q; Tao, S H; Liow, T Y; Yu, M B; Lo, G Q; Kwong, D L

    2008-09-29

    We designed and fabricated silicon-on-insulator based Michelson interferometer (MI) thermo-optical switches with deep etched trenches for heat-isolation. Switch power was reduced approximately 20% for the switch with deep etched trenches, and the MI saved approximately 50% power than that of the Mach-Zehnder interferometer. 10.6 mW switch power, approximately 42 micros switch time for the MI with deep trenches, 13.14 mW switch power and approximately 34 micros switch time for the MI without deep trenches were achieved.

  11. Fabrication Facilities

    Data.gov (United States)

    Federal Laboratory Consortium — The Fabrication Facilities are a direct result of years of testing support. Through years of experience, the three fabrication facilities (Fort Hood, Fort Lewis, and...

  12. Performance Evaluation of 100 Gigabit Ethernet Switches under Bursty Traffic

    DEFF Research Database (Denmark)

    Ruepp, Sarah Renée; Rytlig, A.; Manolova, Anna Vasileva

    2011-01-01

    Switch fabrics for 100 Gigabit Ethernet systems pose high demands in terms of delay and scalability. In this paper we analyze the performance of a Clos-based switch fabric under uniform and bursty traffic, and compare its performance to a crossbar-based switch design for benchmarking. In particular......) fashion. Simulation results show that for uniform Bernoulli traffic, the DSRR scheme outperforms the others. Under bursty traffic, the DSRR scheme and the random scheme achieve similar performance. The static scheme performs the worst for both cases. Comparing the SMM design to an Output Queued crossbar...... switch only reveals a minor performance penalty, which can be compensated by the high scalability, robustness and low complexity of the Clos-based design for high speed switching systems....

  13. Controller Architectures for Switching

    DEFF Research Database (Denmark)

    Niemann, Hans Henrik; Poulsen, Niels Kjølstad

    2009-01-01

    This paper investigate different controller architectures in connection with controller switching. The controller switching is derived by using the Youla-Jabr-Bongiorno-Kucera (YJBK) parameterization. A number of different architectures for the implementation of the YJBK parameterization...... are described and applied in connection with controller switching. An architecture that does not include inversion of the coprime factors is introduced. This architecture will make controller switching particular simple....

  14. Ovonic switching in tin selenide thin films. Ph.D. Thesis

    Science.gov (United States)

    Baxter, C. R.

    1974-01-01

    Amorphous tin selenide thin films which possess Ovonic switching properties were fabricated using vacuum deposition techniques. Results obtained indicate that memory type Ovonic switching does occur in these films the energy density required for switching from a high impedance to a low impedance state is dependent on the spacing between the electrodes of the device. The switching is also function of the magnitude of the applied voltage pulse. A completely automated computer controlled testing procedure was developed which allows precise control over the shape of the applied voltage switching pulse. A survey of previous experimental and theoretical work in the area of Ovonic switching is also presented.

  15. Saturated Switching Systems

    CERN Document Server

    Benzaouia, Abdellah

    2012-01-01

    Saturated Switching Systems treats the problem of actuator saturation, inherent in all dynamical systems by using two approaches: positive invariance in which the controller is designed to work within a region of non-saturating linear behaviour; and saturation technique which allows saturation but guarantees asymptotic stability. The results obtained are extended from the linear systems in which they were first developed to switching systems with uncertainties, 2D switching systems, switching systems with Markovian jumping and switching systems of the Takagi-Sugeno type. The text represents a thoroughly referenced distillation of results obtained in this field during the last decade. The selected tool for analysis and design of stabilizing controllers is based on multiple Lyapunov functions and linear matrix inequalities. All the results are illustrated with numerical examples and figures many of them being modelled using MATLAB®. Saturated Switching Systems will be of interest to academic researchers in con...

  16. Effective switching frequency multiplier inverter

    Science.gov (United States)

    Su, Gui-Jia; Peng, Fang Z.

    2007-08-07

    A switching frequency multiplier inverter for low inductance machines that uses parallel connection of switches and each switch is independently controlled according to a pulse width modulation scheme. The effective switching frequency is multiplied by the number of switches connected in parallel while each individual switch operates within its limit of switching frequency. This technique can also be used for other power converters such as DC/DC, AC/DC converters.

  17. FreeSWITCH Cookbook

    CERN Document Server

    Minessale, Anthony

    2012-01-01

    This is a problem-solution approach to take your FreeSWITCH skills to the next level, where everything is explained in a practical way. If you are a system administrator, hobbyist, or someone who uses FreeSWITCH on a regular basis, this book is for you. Whether you are a FreeSWITCH expert or just getting started, this book will take your skills to the next level.

  18. Digital fabrication

    CERN Document Server

    2012-01-01

    The Winter 2012 (vol. 14 no. 3) issue of the Nexus Network Journal features seven original papers dedicated to the theme “Digital Fabrication”. Digital fabrication is changing architecture in fundamental ways in every phase, from concept to artifact. Projects growing out of research in digital fabrication are dependent on software that is entirely surface-oriented in its underlying mathematics. Decisions made during design, prototyping, fabrication and assembly rely on codes, scripts, parameters, operating systems and software, creating the need for teams with multidisciplinary expertise and different skills, from IT to architecture, design, material engineering, and mathematics, among others The papers grew out of a Lisbon symposium hosted by the ISCTE-Instituto Universitario de Lisboa entitled “Digital Fabrication – A State of the Art”. The issue is completed with four other research papers which address different mathematical instruments applied to architecture, including geometric tracing system...

  19. Superconducting switch and amplifier device

    International Nuclear Information System (INIS)

    Faris, S.M.

    1982-01-01

    An amplifying or switching superconductive device is described whose current-voltage characteristic is drastically altered by heavy injection of excess energetic quasi-particles. In this device, the superconducting bandgap of a superconducting layer is greatly altered by overinjection of energetic quasi-particles so that the bandgap changes greatly with respect to its thermal equilibrium value, and in most cases is made to vanish. In a preferred embodiment, a three electrode device is fabricated where at least one of the electrodes is a superconductor. Tunnel barriers are located between the electrodes. A first tunnel junction is used to heavily inject energetic quasi-particles into the superconducting electrode to change its superconducting bandgap drastically. In turn, this greatly modifies the currentvoltage characteristics of the second tunnel junction. This device can be used to provide logic circuits, or as an amplifier, and has an output sufficiently large that it can drive other similar devices

  20. Plasma erosion switch

    International Nuclear Information System (INIS)

    Mendel, C.W. Jr.; Goldstein, S.A.; Miller, P.A.

    1976-01-01

    The plasma erosion switch is a device capable of initially carrying high currents, and then of opening in nanoseconds to stand off high voltages. It depends upon the erosion of a plasma which initially fills the switch. The sheath between the plasma and the cathode behaves as a diode with a rapidly increasing A-K gap. Preliminary tests of the switch on the Proto I accelerator at Sandia will be described. In these tests, the switch consisted of a cylinder of highly ionized plasma four inches in diameter and one-inch thick surrounding a one-inch cathode. The switch shorted out prepulse voltages and allowed energy to be stored in the diode inductance outside the switch until the accelerator current reached 75 kA. The switch impedance then rose rapidly to approximately 100 ω in 5 nanoseconds, whereupon the accelerator current transferred to the cathode. Current rise rates of 3.10 13 A/sec were limited by cathode turn-on. Voltage rise rates of 10 15 V/sec were achieved. The elimination of prepulse and machine turn-on transients allowed A-K gaps of 2 mm to be used with 2.5 MV pulses, yielding average E fields of 12 MV/cm. Staged versions of the device are being built and should improve rise rates. The switch shows promise for use with future, higher power, lower inductance machines

  1. Switched reluctance motor drives

    Indian Academy of Sciences (India)

    Davis RM, Ray WF, Blake RJ 1981 Inverter drive for switched reluctance: circuits and component ratings. Inst. Elec. Eng. Proc. B128: 126-136. Ehsani M. 1991 Position Sensor elimination technique for the switched reluctance motor drive. US Patent No. 5,072,166. Ehsani M, Ramani K R 1993 Direct control strategies based ...

  2. Switch on, switch off: stiction in nanoelectromechanical switches

    KAUST Repository

    Wagner, Till J W

    2013-06-13

    We present a theoretical investigation of stiction in nanoscale electromechanical contact switches. We develop a mathematical model to describe the deflection of a cantilever beam in response to both electrostatic and van der Waals forces. Particular focus is given to the question of whether adhesive van der Waals forces cause the cantilever to remain in the \\'ON\\' state even when the electrostatic forces are removed. In contrast to previous studies, our theory accounts for deflections with large slopes (i.e. geometrically nonlinear). We solve the resulting equations numerically to study how a cantilever beam adheres to a rigid electrode: transitions between \\'free\\', \\'pinned\\' and \\'clamped\\' states are shown to be discontinuous and to exhibit significant hysteresis. Our findings are compared to previous results from linearized models and the implications for nanoelectromechanical cantilever switch design are discussed. © 2013 IOP Publishing Ltd.

  3. Free-space optical switching core for storage area network

    Science.gov (United States)

    Zhang, Fan; Collings, Neil; Crossland, William A.; Wilkinson, Timothy D.; Fan, Mark; Taghizadeh, Mohammad R.; Waddie, Andrew

    2005-02-01

    Storage Area Network (SAN) has gradually developed as the demand for storage capacity and fast access has increased. The traditional way of attaching storage directly to the servers over a SCSI bus has limited scalability. Several drawbacks and limitations have turned up. Switched Fibre Channel SAN resolves all of these issues. In this paper, the architecture of the switch fabric for the SAN is discussed. The complete design of the free-space optical switching core based on the diffractive element and the PLZT shutter is proposed.

  4. Using MEMS Capacitive Switches in Tunable RF Amplifiers

    Directory of Open Access Journals (Sweden)

    Danson John

    2006-01-01

    Full Text Available A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA operating at GHz and GHz, and a tunable power amplifier (PA at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB noise figure. MEMS switches are used to implement a variable matching network that allows the PA to realize up to 37% PAE improvement at low input powers.

  5. Locally-Actuated Graphene-Based Nano-Electro-Mechanical Switch

    Directory of Open Access Journals (Sweden)

    Jian Sun

    2016-07-01

    Full Text Available The graphene nano-electro-mechanical switches are promising components due to their outstanding switching performance. However, most of the reported devices suffered from a large actuation voltages, hindering them from the integration in the conventional complementary metal-oxide-semiconductor (CMOS circuit. In this work, we demonstrated the graphene nano-electro-mechanical switches with the local actuation electrode via conventional nanofabrication techniques. Both cantilever-type and double-clamped beam switches were fabricated. These devices exhibited the sharp switching, reversible operation cycles, high on/off ratio, and a low actuation voltage of below 5 V, which were compatible with the CMOS circuit requirements.

  6. Performance evaluation of 100 Gigabit ethernet switching system

    DEFF Research Database (Denmark)

    Rytlig, Andreas; Ruepp, Sarah Renée; Manolova, Anna Vasileva

    2010-01-01

    100 Gigabit Ethernet is an emerging technology and to support it, existing switch fabrics need to be redesigned. High throughput and QoS are required. A scalable multi-stage fabric based on a Clos architecture is envisaged to meet these demands. Using OPNET modeler, a design based on a variation ...... and trans-diagonal patterns, as well as self-similar traffic obtained from ON/OFF Pareto distributed processes....

  7. Switch mode power supply

    International Nuclear Information System (INIS)

    Kim, Hui Jun

    1993-06-01

    This book concentrates on switch mode power supply. It has four parts, which are introduction of switch mode power supply with DC-DC converter such as Buck converter boost converter, Buck-boost converter and PWM control circuit, explanation for SMPS with DC-DC converter modeling and power mode control, resonance converter like resonance switch, converter, multi resonance converter and series resonance and parallel resonance converters, basic test of SMPS with PWM control circuit, Buck converter, Boost converter, flyback converter, forward converter and IC for control circuit.

  8. BROOKHAVEN: Switched power

    International Nuclear Information System (INIS)

    Anon.

    1989-01-01

    Hosted by Brookhaven's Center for Accelerator Physics, a recent workshop on switched power techniques attracted a group of specialists to Shelter Island, New York, location of several important physics meetings, including the famous 1947 sessions which helped mould modern quantum electrodynamics. The current interest in switched power stemmed from a series of papers by W. Willis of CERN, starting in 1984. The idea is for stored electrical energy to be suddenly switched on to a transmission line, producing a very short (about 10 ps) electromagnetic pulse in a region traversed by a particle beam

  9. Electromechanical magnetization switching

    Energy Technology Data Exchange (ETDEWEB)

    Chudnovsky, Eugene M. [Department of Physics and Astronomy, Lehman College and Graduate School, The City University of New York, 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Jaafar, Reem [Department of Mathematics, Engineering and Computer Science, LaGuardia Community College, The City University of New York, 31-10 Thomson Avenue, Long Island City, New York 11101 (United States)

    2015-03-14

    We show that the magnetization of a torsional oscillator that, in addition to the magnetic moment also possesses an electrical polarization, can be switched by the electric field that ignites mechanical oscillations at the frequency comparable to the frequency of the ferromagnetic resonance. The 180° switching arises from the spin-rotation coupling and is not prohibited by the different symmetry of the magnetic moment and the electric field as in the case of a stationary magnet. Analytical equations describing the system have been derived and investigated numerically. Phase diagrams showing the range of parameters required for the switching have been obtained.

  10. Electromechanical magnetization switching

    International Nuclear Information System (INIS)

    Chudnovsky, Eugene M.; Jaafar, Reem

    2015-01-01

    We show that the magnetization of a torsional oscillator that, in addition to the magnetic moment also possesses an electrical polarization, can be switched by the electric field that ignites mechanical oscillations at the frequency comparable to the frequency of the ferromagnetic resonance. The 180° switching arises from the spin-rotation coupling and is not prohibited by the different symmetry of the magnetic moment and the electric field as in the case of a stationary magnet. Analytical equations describing the system have been derived and investigated numerically. Phase diagrams showing the range of parameters required for the switching have been obtained

  11. JUNOS Enterprise Switching

    CERN Document Server

    Reynolds, Harry

    2009-01-01

    JUNOS Enterprise Switching is the only detailed technical book on Juniper Networks' new Ethernet-switching EX product platform. With this book, you'll learn all about the hardware and ASIC design prowess of the EX platform, as well as the JUNOS Software that powers it. Not only is this extremely practical book a useful, hands-on manual to the EX platform, it also makes an excellent study guide for certification exams in the JNTCP enterprise tracks. The authors have based JUNOS Enterprise Switching on their own Juniper training practices and programs, as well as the configuration, maintenanc

  12. uv preilluminated gas switches

    Energy Technology Data Exchange (ETDEWEB)

    Bradley, L.P.; Orham, E.L.; Stowers, I.F.; Braucht, J.R.

    1980-06-03

    We have designed, built, and characterized uv preilluminated gas switches for a trigger circuit and a low inductance discharge circuit. These switches have been incorporated into a 54 x 76 x 150 cm pulser module to produce a 1 Ma output current rising at 5 x 10/sup 12/ amps/sec with 1 ns jitter. Twenty such modules will be used on the Nova Inertial Confinement Fusion Laser System for plasma retropulse shutters.

  13. Switching power supply filter

    Science.gov (United States)

    Kumar, Prithvi R. (Inventor); Abare, Wayne (Inventor)

    1989-01-01

    A filter for a switching power supply. The filter includes a common mode inductor with coil configurations allowing differential mode current from a dc source to pass through but attenuating common mode noise from the power supply so that the noise does not reach the dc source. The invention also includes the use of feed through capacitors at the switching power supply input terminals to provide further high-frequency noise attenuation.

  14. uv preilluminated gas switches

    International Nuclear Information System (INIS)

    Bradley, L.P.; Orham, E.L.; Stowers, I.F.; Braucht, J.R.

    1980-01-01

    We have designed, built, and characterized uv preilluminated gas switches for a trigger circuit and a low inductance discharge circuit. These switches have been incorporated into a 54 x 76 x 150 cm pulser module to produce a 1 Ma output current rising at 5 x 10 12 amps/sec with 1 ns jitter. Twenty such modules will be used on the Nova Inertial Confinement Fusion Laser System for plasma retropulse shutters

  15. Photonics in switching

    CERN Document Server

    Midwinter, John E; Kelley, Paul

    1993-01-01

    Photonics in Switching provides a broad, balanced overview of the use of optics or photonics in switching, from materials and devices to system architecture. The chapters, each written by an expert in the field, survey the key technologies, setting them in context and highlighting their benefits and possible applications. This book is a valuable resource for those working in the communications industry, either at the professional or student level, who do not have extensive background knowledge or the underlying physics of the technology.

  16. Optical switching systems using nanostructures

    DEFF Research Database (Denmark)

    Stubkjær, Kristian

    2004-01-01

    High capacity multiservice optical networks require compact and efficient switches. The potential benefits of optical switch elements based on nanostructured material are reviewed considering various material systems.......High capacity multiservice optical networks require compact and efficient switches. The potential benefits of optical switch elements based on nanostructured material are reviewed considering various material systems....

  17. Understanding and Supporting Window Switching

    NARCIS (Netherlands)

    Tak, S.

    2011-01-01

    Switching between windows on a computer is a frequent activity, but finding and switching to the target window can be inefficient. This thesis aims to better un-derstand and support window switching. It explores two issues: (1) the lack of knowledge of how people currently interact with and switch

  18. Active Photonic Crystal Switches: Modeling, Design and Experimental Characterization

    DEFF Research Database (Denmark)

    Heuck, Mikkel; Yu, Yi; Kristensen, Philip Trøst

    2013-01-01

    In this paper, we present recent progress in modeling, design, fabrication and experimental characterization of InP photonic crystal all-optical switches. Novel designs with increased flexibility and performance are presented, and their operation using high speed data signals is analyzed...

  19. Bipolar resistive switching behaviors of ITO nanowire networks

    Directory of Open Access Journals (Sweden)

    Qiang Li

    2016-02-01

    Full Text Available We have fabricated indium tin oxide (ITO nanowire (NW networks on aluminum electrodes using electron beam evaporation. The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior. The resistive switching characteristics of ITO-NW networks are related to the morphology of NWs. The x-ray photoelectron spectroscopy was used to obtain the chemical nature from the NWs surface, investigating the oxygen vacancy state. A stable switching voltages and a clear memory window were observed in needle-shaped NWs. The ITO-NW networks can be used as a new two-dimensional metal oxide material for the fabrication of high-density memory devices.

  20. A radiation hard vacuum switch

    Science.gov (United States)

    Boettcher, G.E.

    1988-07-19

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction. 3 figs.

  1. An experimental study of VBR video over various ATM switch architectures

    Energy Technology Data Exchange (ETDEWEB)

    Tsang, R.P. [Sandia National Labs., Livermore, CA (United States); Hsieh, J.; Du, D.H.C. [Univ. of Minnesota, Minneapolis, MN (United States)

    1997-12-31

    One of the most important components of an Asynchronous Transfer Mode (ATM) network is the switch. Switch design is not a part of the ATM standards so vendors use a wide variety of techniques to build their switches. In this paper, the authors present experimental results of switching and multiplexing real-time Variable Bit Rate (VBR) video traffic (JPEG, MPEG-1, and MPEG-2) through two different ATM switch architectures. Real-time VBR traffic, such as digital video, is particularly interesting due to its high demands in terms of bandwidth, real-time delivery and processing requirements. The experiments show that the fastest switches, i.e., lowest latencies, do not necessarily perform better when transmitting VBR video. The impact of the high speed network components; characteristics, such as switch fabric architecture, buffering strategies, and higher layer transport protocols (i.e., UDP, TCP/IP), are illustrated through the experimental results.

  2. Energy reversible switching from amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.

    2013-08-01

    We report observation of energy reversible switching from amorphous metal based nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM switches can be used as a complementary switching element in many nanoelectronic system applications. Its inherent zero power consumption because of mechanical detachment is an attractive feature. However, its operating voltage needs to be in the realm of 1 volt or lower. Appropriate design and lower Young\\'s modulus can contribute achieving lower operating voltage. Therefore, we have developed amorphous metal with low Young\\'s modulus and in this paper reporting the energy reversible switching from a laterally actuated double electrode NEM switch. © 2013 IEEE.

  3. Microfabricated triggered vacuum switch

    Science.gov (United States)

    Roesler, Alexander W [Tijeras, NM; Schare, Joshua M [Albuquerque, NM; Bunch, Kyle [Albuquerque, NM

    2010-05-11

    A microfabricated vacuum switch is disclosed which includes a substrate upon which an anode, cathode and trigger electrode are located. A cover is sealed over the substrate under vacuum to complete the vacuum switch. In some embodiments of the present invention, a metal cover can be used in place of the trigger electrode on the substrate. Materials used for the vacuum switch are compatible with high vacuum, relatively high temperature processing. These materials include molybdenum, niobium, copper, tungsten, aluminum and alloys thereof for the anode and cathode. Carbon in the form of graphitic carbon, a diamond-like material, or carbon nanotubes can be used in the trigger electrode. Channels can be optionally formed in the substrate to mitigate against surface breakdown.

  4. Switching power supply

    Science.gov (United States)

    Mihalka, A.M.

    1984-06-05

    The invention is a repratable capacitor charging, switching power supply. A ferrite transformer steps up a dc input. The transformer primary is in a full bridge configuration utilizing power MOSFETs as the bridge switches. The transformer secondary is fed into a high voltage, full wave rectifier whose output is connected directly to the energy storage capacitor. The transformer is designed to provide adequate leakage inductance to limit capacitor current. The MOSFETs are switched to the variable frequency from 20 to 50 kHz to charge a capacitor from 0.6 kV. The peak current in a transformer primary and secondary is controlled by increasing the pulse width as the capacitor charges. A digital ripple counter counts pulses and after a preselected desired number is reached an up-counter is clocked.

  5. Optical computer switching network

    Science.gov (United States)

    Clymer, B.; Collins, S. A., Jr.

    1985-01-01

    The design for an optical switching system for minicomputers that uses an optical spatial light modulator such as a Hughes liquid crystal light valve is presented. The switching system is designed to connect 80 minicomputers coupled to the switching system by optical fibers. The system has two major parts: the connection system that connects the data lines by which the computers communicate via a two-dimensional optical matrix array and the control system that controls which computers are connected. The basic system, the matrix-based connecting system, and some of the optical components to be used are described. Finally, the details of the control system are given and illustrated with a discussion of timing.

  6. Optical Packet Switching Demostrator

    DEFF Research Database (Denmark)

    Mortensen, Brian Bach; Berger, Michael Stübert

    2002-01-01

    In the IST project DAVID (data and voice integration over DWDM) work is carried out defining possible architectures of future optical packet switched networks. The feasibility of the architecture is to be verified in a demonstration set-up. This article describes the demonstrator set-up and the m......In the IST project DAVID (data and voice integration over DWDM) work is carried out defining possible architectures of future optical packet switched networks. The feasibility of the architecture is to be verified in a demonstration set-up. This article describes the demonstrator set...

  7. Plasma Switch Development.

    Science.gov (United States)

    1984-06-08

    ACCION NO. 3. RCIPIENT’S CATALOG NUMBER 4. TITLE (and Subtitle) 5. TYPE OF REPORT & PERIOD COVERED PLASMA SWITCH DEVELOPMENT Final Report: 02/26/82 thru...with an inductive energy store. At present, the are summarized state-of-he- art of high-power repetitive opening or doming switches is limited to...Alexandria, VA 22304. Figure 7 Is a circuit diagram of the proposed system. The desired load pulse parameters art -100- e References 1. R.D. Ford, 0. Jenkins

  8. Bearingless switched reluctance motor

    Science.gov (United States)

    Morrison, Carlos R. (Inventor)

    2004-01-01

    A switched reluctance motor has a stator with a first set of poles directed toward levitating a rotor horizontally within the stator. A disc shaped portion of a hybrid rotor is affected by the change in flux relative to the current provided at these levitation poles. A processor senses the position of the rotor and changes the flux to move the rotor toward center of the stator. A second set of poles of the stator are utilized to impart torque upon a second portion of the rotor. These second set of poles are driven in a traditional switched reluctance manner by the processor.

  9. NEBULAS A High Performance Data-Driven Event-Building Architecture based on an Asynchronous Self-Routing Packet-Switching Network

    CERN Multimedia

    Costa, M; Letheren, M; Djidi, K; Gustafsson, L; Lazraq, T; Minerskjold, M; Tenhunen, H; Manabe, A; Nomachi, M; Watase, Y

    2002-01-01

    RD31 : The project is evaluating a new approach to event building for level-two and level-three processor farms at high rate experiments. It is based on the use of commercial switching fabrics to replace the traditional bus-based architectures used in most previous data acquisition sytems. Switching fabrics permit the construction of parallel, expandable, hardware-driven event builders that can deliver higher aggregate throughput than the bus-based architectures. A standard industrial switching fabric technology is being evaluated. It is based on Asynchronous Transfer Mode (ATM) packet-switching network technology. Commercial, expandable ATM switching fabrics and processor interfaces, now being developed for the future Broadband ISDN infrastructure, could form the basis of an implementation. The goals of the project are to demonstrate the viability of this approach, to evaluate the trade-offs involved in make versus buy options, to study the interfacing of the physics frontend data buffers to such a fabric, a...

  10. Radiation Hardened Ethernet PHY and Switch Fabric, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Innoflight will develop a new family of radiation hardened (up to 3 Mrad(Si)), fault-tolerant, high data-rate (up to 8 Gbps), low power Gigabit Ethernet PHY and...

  11. Study of influence on micro-fabricated resistive switching organic ...

    Indian Academy of Sciences (India)

    - tron beam directly writing, nano-imprint and so on. However, the procedure and the cost of these methods are relatively complicated and expensive for semiconductors process. In this paper, we demonstrate a promising and low-cost method.

  12. Modelling switching-time effects in high-frequency power conditioning networks

    Science.gov (United States)

    Owen, H. A.; Sloane, T. H.; Rimer, B. H.; Wilson, T. G.

    1979-01-01

    Power transistor networks which switch large currents in highly inductive environments are beginning to find application in the hundred kilohertz switching frequency range. Recent developments in the fabrication of metal-oxide-semiconductor field-effect transistors in the power device category have enhanced the movement toward higher switching frequencies. Models for switching devices and of the circuits in which they are imbedded are required to properly characterize the mechanisms responsible for turning on and turning off effects. Easily interpreted results in the form of oscilloscope-like plots assist in understanding the effects of parametric studies using topology oriented computer-aided analysis methods.

  13. Ultrafast gas switching experiments

    International Nuclear Information System (INIS)

    Frost, C.A.; Martin, T.H.; Patterson, P.E.; Rinehart, L.F.; Rohwein, G.J.; Roose, L.D.; Aurand, J.F.; Buttram, M.T.

    1993-01-01

    We describe recent experiments which studied the physics of ultrafast gas breakdown under the extreme overvoltages which occur when a high pressure gas switch is pulse charged to hundreds of kV in 1 ns or less. The highly overvolted peaking gaps produce powerful electromagnetic pulses with risetimes Khz at > 100 kV/m E field

  14. Photonic MEMS switch applications

    Science.gov (United States)

    Husain, Anis

    2001-07-01

    As carriers and service providers continue their quest for profitable network solutions, they have shifted their focus from raw bandwidth to rapid provisioning, delivery and management of revenue generating services. Inherently transparent to data rate the transmission wavelength and data format, MEMS add scalability, reliability, low power and compact size providing flexible solutions to the management and/or fiber channels in long haul, metro, and access networks. MEMS based photonic switches have gone from the lab to commercial availability and are now currently in carrier trials and volume production. 2D MEMS switches offer low up-front deployment costs while remaining scalable to large arrays. They allow for transparent, native protocol transmission. 2D switches enable rapid service turn-up and management for many existing and emerging revenue rich services such as storage connectivity, optical Ethernet, wavelength leasing and optical VPN. As the network services evolve, the larger 3D MEMS switches, which provide greater scalability and flexibility, will become economically viable to serve the ever-increasing needs.

  15. Search and switching costs

    NARCIS (Netherlands)

    Siekman, Wilhelm Henricus

    2016-01-01

    This thesis analyses markets with search and with switching costs. It provides insights in several important issues in search markets, including how loss aversion may affect consumer behavior and firm conduct, and how prices, welfare, and profits may change when an intermediating platform orders

  16. The Octopus switch

    NARCIS (Netherlands)

    Havinga, Paul J.M.

    2000-01-01

    This chapter1 discusses the interconnection architecture of the Mobile Digital Companion. The approach to build a low-power handheld multimedia computer presented here is to have autonomous, reconfigurable modules such as network, video and audio devices, interconnected by a switch rather than by a

  17. Stochastic Switching Dynamics

    DEFF Research Database (Denmark)

    Simonsen, Maria

    mode control. It is investigated how to understand and interpret solutions to models of switched systems, which are exposed to discontinuous dynamics and uncertainties (primarily) in the form of white noise. The goal is to gain knowledge about the performance of the system by interpreting the solution...

  18. Molecular Rotors as Switches

    Directory of Open Access Journals (Sweden)

    Kang L. Wang

    2012-08-01

    Full Text Available The use of a functional molecular unit acting as a state variable provides an attractive alternative for the next generations of nanoscale electronics. It may help overcome the limits of conventional MOSFETd due to their potential scalability, low-cost, low variability, and highly integratable characteristics as well as the capability to exploit bottom-up self-assembly processes. This bottom-up construction and the operation of nanoscale machines/devices, in which the molecular motion can be controlled to perform functions, have been studied for their functionalities. Being triggered by external stimuli such as light, electricity or chemical reagents, these devices have shown various functions including those of diodes, rectifiers, memories, resonant tunnel junctions and single settable molecular switches that can be electronically configured for logic gates. Molecule-specific electronic switching has also been reported for several of these device structures, including nanopores containing oligo(phenylene ethynylene monolayers, and planar junctions incorporating rotaxane and catenane monolayers for the construction and operation of complex molecular machines. A specific electrically driven surface mounted molecular rotor is described in detail in this review. The rotor is comprised of a monolayer of redox-active ligated copper compounds sandwiched between a gold electrode and a highly-doped P+ Si. This electrically driven sandwich-type monolayer molecular rotor device showed an on/off ratio of approximately 104, a read window of about 2.5 V, and a retention time of greater than 104 s. The rotation speed of this type of molecular rotor has been reported to be in the picosecond timescale, which provides a potential of high switching speed applications. Current-voltage spectroscopy (I-V revealed a temperature-dependent negative differential resistance (NDR associated with the device. The analysis of the device

  19. Control synthesis of switched systems

    CERN Document Server

    Zhao, Xudong; Niu, Ben; Wu, Tingting

    2017-01-01

    This book offers its readers a detailed overview of the synthesis of switched systems, with a focus on switching stabilization and intelligent control. The problems investigated are not only previously unsolved theoretically but also of practical importance in many applications: voltage conversion, naval piloting and navigation and robotics, for example. The book considers general switched-system models and provides more efficient design methods to bring together theory and application more closely than was possible using classical methods. It also discusses several different classes of switched systems. For general switched linear systems and switched nonlinear systems comprising unstable subsystems, it introduces novel ideas such as invariant subspace theory and the time-scheduled Lyapunov function method of designing switching signals to stabilize the underlying systems. For some typical switched nonlinear systems affected by various complex dynamics, the book proposes novel design approaches based on inte...

  20. Novel RF MEMS capacitive switches with design flexibility for multi-frequency operation

    Science.gov (United States)

    Gopalakrishnan, Sarath; DasGupta, Amitava; Nair, Deleep R.

    2017-09-01

    RF MEMS capacitive shunt switches with a dielectric-on-metal (DOM) capacitor, which are widely used for microwave applications in the communication field, suffer from some serious drawbacks. A significant shift is observed in the resonant frequency of these switches due to the reduction in the down-state capacitance caused by the surface roughness of the dielectric layer. In order to achieve accurate down-state capacitance, a thin layer of floating metal is deposited on the dielectric layer converting the DOM switch to a metal-insulator metal (MIM) switch. The MIM switch opens up interesting possibilities in the design, such as achieving flexibility in the operating frequency of the switch. This paper reports a novel method to achieve design flexibility for multi-frequency operation in switches, by effectively utilizing the equipotential nature of the floating metal in the MIM capacitor. Unlike in a DOM switch, the resonant frequency can be varied by changing merely the length of the floating metal, without having to make any other structural modifications. This enables to have switches operating at different frequency on the same wafer. The beams of the switches are also designed in such a way as to provide stress resilience, thereby preventing buckling. This paper presents the design, simulation, fabrication and characterization of a switch that operates in the X-band. The fabricated switches show excellent stress resilience. The characterized switch demonstrates a reduction in the resonant frequency in proportion to an increase in the length of the floating metal, hence validating the design flexibility proposed in this paper.

  1. Review of opening switch technology

    International Nuclear Information System (INIS)

    Kristiansen, M.; Schoenbach, K.M.; Schaefer, G.

    1984-01-01

    Review of opening switch technology is given. Classification of open switches applied in pulsed power technology is presented. The most familiar opening switches are fuses. It is shown that a strong oxidizer (H 2 O 2 in water), especially in combination with wires of Al, increases the maximum voltage. Thermally driven opening switches are the result of attempts to achive the speed and economy of fuse opening switches but with added advantage of repetitive operation. The search for coordinate materials for this type of opening switch is in its infancy and it is difficult to predict how successful such a switch may be. Explosive opening switches offer the possibility of precise timing and permit the delay before explosion to be controlled independently of current flowing through the switch. Plasma guns, dense plasma focus and MHD switches are also considered. Diffuse discharge opening switches are attractive for repetitive operation. The plasma erosion switch operates on a very short time scale of 10 ns to 100 ns, both to regard to conduction and opening times

  2. Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    -division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-oninsulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror......, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained...

  3. Copper oxide resistive switching memory for e-textile

    Directory of Open Access Journals (Sweden)

    Jin-Woo Han

    2011-09-01

    Full Text Available A resistive switching memory suitable for integration into textiles is demonstrated on a copper wire network. Starting from copper wires, a Cu/CuxO/Pt sandwich structure is fabricated. The active oxide film is produced by simple thermal oxidation of Cu in atmospheric ambient. The devices display a resistance switching ratio of 102 between the high and low resistance states. The memory states are reversible and retained over 107 seconds, with the states remaining nondestructive after multiple read operations. The presented device on the wire network can potentially offer a memory for integration into smart textile.

  4. Optical fiber switch

    Science.gov (United States)

    Early, James W.; Lester, Charles S.

    2002-01-01

    Optical fiber switches operated by electrical activation of at least one laser light modulator through which laser light is directed into at least one polarizer are used for the sequential transport of laser light from a single laser into a plurality of optical fibers. In one embodiment of the invention, laser light from a single excitation laser is sequentially transported to a plurality of optical fibers which in turn transport the laser light to separate individual remotely located laser fuel ignitors. The invention can be operated electro-optically with no need for any mechanical or moving parts, or, alternatively, can be operated electro-mechanically. The invention can be used to switch either pulsed or continuous wave laser light.

  5. Beyond the switch

    DEFF Research Database (Denmark)

    Aliakseyeu, Dzmitry; Meerbeek, Bernt; Mason, Jon

    2014-01-01

    The commercial introduction of connected lighting that can be integrated with sensors and other devices is opening up new possibilities in creating responsive and intelligent environments. The role of lighting in such systems goes beyond simply functional illumination. In part due to the large...... is to explore new ways of interacting with light where lighting can not only be switched on or off, but is an intelligent system embedded in the environment capable of creating a variety of effects. The connectivity between multiple systems and other ecosystems, for example when transitioning from your home...... and established lighting network, and with the advent of the LED, new types of lighting output are now possible. However, the current approach for controlling such systems is to simply replace the light switch with a somewhat more sophisticated smartphone-based remote control. The focus of this workshop...

  6. Laser activated superconducting switch

    International Nuclear Information System (INIS)

    Wolf, A.A.

    1976-01-01

    A superconducting switch or bistable device is described consisting of a superconductor in a cryogen maintaining a temperature just below the transition temperature, having a window of the proper optical frequency band for passing a laser beam which may impinge on the superconductor when desired. The frequency of the laser is equal to or greater than the optical absorption frequency of the superconducting material and is consistent with the ratio of the gap energy of the switch material to Planck's constant, to cause depairing of electrons, and thereby normalize the superconductor. Some embodiments comprise first and second superconducting metals. Other embodiments feature the two superconducting metals separated by a thin film insulator through which the superconducting electrons tunnel during superconductivity

  7. Coulomb Blockade Plasmonic Switch.

    Science.gov (United States)

    Xiang, Dao; Wu, Jian; Gordon, Reuven

    2017-04-12

    Tunnel resistance can be modulated with bias via the Coulomb blockade effect, which gives a highly nonlinear response current. Here we investigate the optical response of a metal-insulator-nanoparticle-insulator-metal structure and show switching of a plasmonic gap from insulator to conductor via Coulomb blockade. By introducing a sufficiently large charging energy in the tunnelling gap, the Coulomb blockade allows for a conductor (tunneling) to insulator (capacitor) transition. The tunnelling electrons can be delocalized over the nanocapacitor again when a high energy penalty is added with bias. We demonstrate that this has a huge impact on the plasmonic resonance of a 0.51 nm tunneling gap with ∼70% change in normalized optical loss. Because this structure has a tiny capacitance, there is potential to harness the effect for high-speed switching.

  8. An Ethology of Urban Fabric(s)

    DEFF Research Database (Denmark)

    Fritsch, Jonas; Thomsen, Bodil Marie Stavning

    2014-01-01

    The article explores a non-metaphorical understanding of urban fabric(s), shifting the attention from a bird’s eye perspective to the actual, textural manifestations of a variety of urban fabric(s) to be studied in their real, processual, ecological and ethological complexity within urban life. We...... effectuate this move by bringing into resonance a range of intersecting fields that all deal with urban fabric(s) in complementary ways (interaction design and urban design activism, fashion, cultural theory, philosophy, urban computing)....

  9. Practical switching power supply design

    CERN Document Server

    Brown, Martin C

    1990-01-01

    Take the ""black magic"" out of switching power supplies with Practical Switching Power Supply Design! This is a comprehensive ""hands-on"" guide to the theory behind, and design of, PWM and resonant switching supplies. You'll find information on switching supply operation and selecting an appropriate topology for your application. There's extensive coverage of buck, boost, flyback, push-pull, half bridge, and full bridge regulator circuits. Special attention is given to semiconductors used in switching supplies. RFI/EMI reduction, grounding, testing, and safety standards are also deta

  10. Python Switch Statement

    Directory of Open Access Journals (Sweden)

    2008-06-01

    Full Text Available The Python programming language does not have a built in switch/case control structure as found in many other high level programming languages. It is thought by some that this is a deficiency in the language, and the control structure should be added. This paper demonstrates that not only is the control structure not needed, but that the methods available in Python are more expressive than built in case statements in other high level languages.

  11. Nanomechanics of flexoelectric switching

    Science.gov (United States)

    Očenášek, J.; Lu, H.; Bark, C. W.; Eom, C. B.; Alcalá, J.; Catalan, G.; Gruverman, A.

    2015-07-01

    We examine the phenomenon of flexoelectric switching of polarization in ultrathin films of barium titanate induced by a tip of an atomic force microscope (AFM). The spatial distribution of the tip-induced flexoelectricity is computationally modeled both for perpendicular mechanical load (point measurements) and for sliding load (scanning measurements), and compared with experiments. We find that (i) perpendicular load does not lead to stable ferroelectric switching in contrast to the load applied in the sliding contact load regime, due to nontrivial differences between the strain distributions in both regimes: ferroelectric switching for the perpendicular load mode is impaired by a strain gradient inversion layer immediately underneath the AFM tip; while for the sliding load regime, domain inversion is unimpaired within a greater material volume subjected to larger values of the mechanically induced electric field that includes the region behind the sliding tip; (ii) beyond a relatively small value of an applied force, increasing mechanical pressure does not increase the flexoelectric field inside the film, but results instead in a growing volume of the region subjected to such field that aids domain nucleation processes; and (iii) the flexoelectric coefficients of the films are of the order of few nC/m, which is much smaller than for bulk BaTi O3 ceramics, indicating that there is a "flexoelectric size effect" that mirrors the ferroelectric one.

  12. "Platform switching": Serendipity

    Directory of Open Access Journals (Sweden)

    N Kalavathy

    2014-01-01

    Full Text Available Implant dentistry is the latest developing field in terms of clinical techniques, research, material science and oral rehabilitation. Extensive work is being done to improve the designing of implants in order to achieve better esthetics and function. The main drawback with respect to implant restoration is achieving good osseointegration along with satisfactory stress distribution, which in turn will improve the prognosis of implant prosthesis by reducing the crestal bone loss. Many concepts have been developed with reference to surface coating of implants, surgical techniques for implant placement, immediate and delayed loading, platform switching concept, etc. This article has made an attempt to review the concept of platform switching was in fact revealed accidentally due to the nonavailability of the abutment appropriate to the size of the implant placed. A few aspect of platform switching, an upcoming idea to reduce crestal bone loss have been covered. The various methods used for locating and preparing the data were done through textbooks, Google search and related articles.

  13. A novel RF MEMS switch with novel mechanical structure modeling

    International Nuclear Information System (INIS)

    Chan, K Y; Ramer, R

    2010-01-01

    A novel RF MEMS contact-type switch for RF and microwave applications is presented. The switch is designed with special mechanical structures for stiffness enhancement. A method of using dimple lines to reduce the stress sensitivity of a beam is shown with complete mathematical modeling and finite element mechanical simulation. A complete mathematical model is developed for the proposed switch. Limited fabrication resolution and non-uniformities in layer thickness and stress were taken into consideration for this design, concomitantly with the preservation of device miniaturization and functionalities. The novel mechanical modeling of the switch leads to the estimation of the actuation voltage and shows simplification from previously published analysis. The measured actuation voltage and RF performance of the novel RF MEMS switch are also reported. The switch actuated at 20 V achieved better than 22 dB return loss and less than 0.7 dB insertion loss in on state from dc–40 GHz; it provided better than 30 dB isolation in off state

  14. Fabrication and Prototyping Lab

    Data.gov (United States)

    Federal Laboratory Consortium — Purpose: The Fabrication and Prototyping Lab for composite structures provides a wide variety of fabrication capabilities critical to enabling hands-on research and...

  15. Buffer allocation in an ATM switch with output buffer and speed constraints

    Science.gov (United States)

    Gupta, Anil K.; Georganas, N. D.

    A synchronous nonblocking N times N switch for asynchronous transfer mode (ATM) networks or high speed packet switching networks transporting fixed length packets called cells is considered. Such a switch with output queuing achieves the optimal performance, however it requires the switch fabric to work at the speed of N. In practice the switch may operate L times faster than the input/output trunk. It is assumed that queues at each output port have a limited buffer space and whenever an output queue is full, the back-pressure is applied and the packets are retained at the head of the input queues. The upper bound on the packet loss probability at the input queues in such a switch are computed. To achieve a given packet loss rate, the switch with L equals 2 requires almost the same amount of input and output buffers as with L equals 4 up to 70 percent input load, but as the load increases beyond 70 percent the switch with L equals 4 would require more output buffers and less input buffers in comparison with a switch operating at L equals 2. The performance of a switch with L equals 3 is very similar to that for L equals 4 and is not considered.

  16. Fabrication of recyclable superhydrophobic cotton fabrics

    Science.gov (United States)

    Han, Sang Wook; Park, Eun Ji; Jeong, Myung-Geun; Kim, Il Hee; Seo, Hyun Ook; Kim, Ju Hwan; Kim, Kwang-Dae; Kim, Young Dok

    2017-04-01

    Commercial cotton fabric was coated with SiO2 nanoparticles wrapped with a polydimethylsiloxane (PDMS) layer, and the resulting material surface showed a water contact angle greater than 160°. The superhydrophobic fabric showed resistance to water-soluble contaminants and maintained its original superhydrophobic properties with almost no alteration even after many times of absorption-washing cycles of oil. Moreover, superhydrophobic fabric can be used as a filter to separate oil from water. We demonstrated a simple method of fabrication of superhydrophobic fabric with potential interest for use in a variety of applications.

  17. Safe LPV Controller Switching

    DEFF Research Database (Denmark)

    Trangbæk, K

    2011-01-01

    Before switching to a new controller it is crucial to assure that the new closed loop will be stable. In this paper it is demonstrated how stability can be checked with limited measurement data available from the current closed loop. The paper extends an existing method to linear parameter varying...... plants and controllers. Rather than relying on frequency domain methods as done in the LTI case, it is shown how to use standard LPV system identification methods. It is furthermore shown how to include model uncertainty to robustify the results. By appropriate filtering, it is only necessary to evaluate...

  18. Safe LPV Controller Switching

    DEFF Research Database (Denmark)

    Trangbæk, K

    2010-01-01

    Before switching to a new controller it is crucial to assure that the new closed loop will be stable. In this paper it is demonstrated how stability can be checked with limited measurement data available from the current closed loop. The paper extends an existing method to linear parameter varying...... plants and controllers. Rather than relying on frequency domain methods as done in the LTI case, it is shown how to use standard LPV system identification methods. By identifying a filtered closed-loop operator rather than directly identifying the plant, more reliable results are obtained....

  19. Multi states electromechanical switch for energy efficient parallel data processing

    KAUST Repository

    Kloub, Hussam

    2011-04-01

    We present a design, simulation results and fabrication of electromechanical switches enabling parallel data processing and multi functionality. The device is applied in logic gates AND, NOR, XNOR, and Flip-Flops. The device footprint size is 2μm by 0.5μm, and has a pull-in voltage of 5.15V which is verified by FEM simulation. © 2011 IEEE.

  20. Optimizing POF/PCF based optical switch for indoor LAN

    International Nuclear Information System (INIS)

    Bhuiyan, M M I; Rashid, M M; Ahmed, Sayem; Bhuiyan, M; Kajihara, M

    2013-01-01

    For indoor local area network (LAN) the Polymer optical fiber (POF) is mostly appropriate, because of its large core diameter and flexible material. A 1×2 optical switch for indoor LAN using POF and a shape memory alloy (SMA) coil actuator with magnetic latches was successfully fabricated and tested. To achieve switching by the movement of a POF, large displacement is necessary because the core diameter is large (e.g., 0.486mm). A SMA coil actuator is used for large displacement and a magnetic latching system is used for fixing the position of the shifted POF. The insertion loss is 0.40 to 0.50dB and crosstalk is more than 50dB without index-matching oil. Switching speed is less than 1s at a driving current of 80mA. A cycling test was performed 1.4 million times. Polymer clad fiber optical (PCF) switch also fabricated and tasted

  1. Analysis and Design of Transformer-Based mm-Wave Transmit/Receive Switches

    Directory of Open Access Journals (Sweden)

    Ehsan Adabi

    2012-01-01

    Full Text Available Transformer-based shunt single pole, double-throw (SPDT switches are analyzed, and design equations are provided. A mm-wave transformer-based SPDT shunt switch prototype was designed and fabricated in 90 nm digital CMOS process. It has a minimum insertion loss of 3.4 dB at 50 GHz from the single pole to the ON-thru port and a leakage of 19 dB from the single pole to the OFF-thru port. The isolation is 13.7 dB between the two thru ports. Large signal measurements verify that the switch is capable of handling +14 dBm of input power at its 1 dB compression point. The fabricated SPDT switch has a minute active area size of 60 μm×60 μm.

  2. Modeling of rf MEMS switches

    Science.gov (United States)

    Robertson, Barbara; Ho, Fat D.; Hudson, Tracy D.

    2001-10-01

    The microelectromechanical system (MEMS) switch offers many benefits in radio frequency (RF) applications. These benefits include low insertion loss, high quality factor (Q), low power, RF isolation, and low cost. The ability to manufacture mechanical switches on a chip with electronics can lead to higher functionality, such as single-chip arrays, and smart switches. The MEMS switch is also used as a building block in devices such as phase shifters, filters, and switchable antenna elements. The MEMS designer needs models of these basic elements in order to incorporate them into their applications. The objective of this effort is to develop lumped element models for MEMS RF switches, which are incorporated into a CAD software. Tanner Research Inc.'s Electronic Design Automation (EDA) software is being used to develop a suite of mixed-signal RF switch models. The suite will include switches made from cantilever beams and fixed-fixed beams. The switches may be actuated by electrostatic, piezoelectric or electromagnetic forces. The effort presented in this paper concentrates on switches actuated by electrostatic forces. The lumped element models use a current-force electrical-mechanical analogy. Finite element modeling and device testing will be used to verify the Tanner models. The effects of materials, geometries, temperature, fringing fields, and mounting geometries are considered.

  3. Software Switching for Data Acquisition

    CERN Multimedia

    CERN. Geneva; Malone, David

    2016-01-01

    In this talk we discuss the feasibility of replacing telecom-class routers with a topology of commodity servers acting as software switches in data acquisition. We extend the popular software switch, Open vSwitch, with a dedicated, throughput-oriented buffering mechanism. We compare the performance under heavy many-to-one congestion to typical Ethernet switches and evaluate the scalability when building larger topologies, exploiting the integration with software-defined networking technologies. Please note that David Malone will speak on behalf of Grzegorz Jereczek.

  4. Recent developments in switching theory

    CERN Document Server

    Mukhopadhyay, Amar

    2013-01-01

    Electrical Science Series: Recent Developments in Switching Theory covers the progress in the study of the switching theory. The book discusses the simplified proof of Post's theorem on completeness of logic primitives; the role of feedback in combinational switching circuits; and the systematic procedure for the design of Lupanov decoding networks. The text also describes the classical results on counting theorems and their application to the classification of switching functions under different notions of equivalence, including linear and affine equivalences. The development of abstract har

  5. Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

    Science.gov (United States)

    Sumant, Anirudha V.; Auciello, Orlando H.; Mancini, Derrick C.

    2013-01-15

    An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

  6. Polymorphous computing fabric

    Science.gov (United States)

    Wolinski, Christophe Czeslaw [Los Alamos, NM; Gokhale, Maya B [Los Alamos, NM; McCabe, Kevin Peter [Los Alamos, NM

    2011-01-18

    Fabric-based computing systems and methods are disclosed. A fabric-based computing system can include a polymorphous computing fabric that can be customized on a per application basis and a host processor in communication with said polymorphous computing fabric. The polymorphous computing fabric includes a cellular architecture that can be highly parameterized to enable a customized synthesis of fabric instances for a variety of enhanced application performances thereof. A global memory concept can also be included that provides the host processor random access to all variables and instructions associated with the polymorphous computing fabric.

  7. ATLAS facility fabrication and assembly

    CERN Document Server

    Ballard, E O; Davis, H A; Nielsen, K E; Parker, G V; Parsons, W M

    2001-01-01

    Summary form only given. Atlas is a pulsed-power facility recently completed at Los Alamos National Laboratory to drive hydrodynamic experiments. This new generation pulsed-power machine consists of a radial array of 24, 240-kV Marx modules and transmission lines supplying current to the load region at the machine center. The transmission lines, powered by the Marx modules, consist of cable headers, load protection switches and tri-plates interfacing to the center transition section through detachable current joints. A conical power-flow-channel attaches to the transition section providing an elevated interface to attach the experimental loads for diagnostic access. Fabrication and assembly of all components for the Atlas machine was completed in August 2000. The machine has also progressed through a test phase where the Marx module/transmission line units were fired, individually, into a test load. Progression continued with eight and sixteen lines being fired. Subsequently, an overall machine test was condu...

  8. Phenotypic switching in bacteria

    Science.gov (United States)

    Merrin, Jack

    Living matter is a non-equilibrium system in which many components work in parallel to perpetuate themselves through a fluctuating environment. Physiological states or functionalities revealed by a particular environment are called phenotypes. Transitions between phenotypes may occur either spontaneously or via interaction with the environment. Even in the same environment, genetically identical bacteria can exhibit different phenotypes of a continuous or discrete nature. In this thesis, we pursued three lines of investigation into discrete phenotypic heterogeneity in bacterial populations: the quantitative characterization of the so-called bacterial persistence, a theoretical model of phenotypic switching based on those measurements, and the design of artificial genetic networks which implement this model. Persistence is the phenotype of a subpopulation of bacteria with a reduced sensitivity to antibiotics. We developed a microfluidic apparatus, which allowed us to monitor the growth rates of individual cells while applying repeated cycles of antibiotic treatments. We were able to identify distinct phenotypes (normal and persistent) and characterize the stochastic transitions between them. We also found that phenotypic heterogeneity was present prior to any environmental cue such as antibiotic exposure. Motivated by the experiments with persisters, we formulated a theoretical model describing the dynamic behavior of several discrete phenotypes in a periodically varying environment. This theoretical framework allowed us to quantitatively predict the fitness of dynamic populations and to compare survival strategies according to environmental time-symmetries. These calculations suggested that persistence is a strategy used by bacterial populations to adapt to fluctuating environments. Knowledge of the phenotypic transition rates for persistence may provide statistical information about the typical environments of bacteria. We also describe a design of artificial

  9. Negative differential resistive switching in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) thin film through electrohydrodynamic atomization

    Science.gov (United States)

    Awais, Muhammad Naeem; Jo, Jeong-Dai; Choi, Kyung Hyun

    2013-10-01

    Polymeric negative differential resistive (NDR) switching was explored based on the sandwiched structure of indium titanium oxide (ITO) coated polyethyleneterepthalate(PET)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)/silver(Ag) through electrohydrodynamic atomization (EHDA) printing technique. The NDR switching in the fabricated device with the structure of ITO/PEDOT:PSS/Ag was analyzed through semiconductor device analyzer under polarity dependent bipolar sweeping voltage of less than . Effect of the current compliance (CC) in the NDR switching of the fabricated switch has been demonstrated. Multiple resistive switching sweeps were taken to scrutinize the robustness of the fabricated device over 100 cycles. The non-volatility of the as-fabricated device was checked against different time stresses over 2500 s. The switching mechanism is proposed to be due to the transition between PEDOT+ and PEDOT0 chains. The current conduction mechanism involved in the PEDOT:PSS based NDR switches is attributed to the ohmic conduction at lower voltages, while space charge limited conduction and NDR effects were prominent due to the injection of carriers at higher voltages.

  10. Woven Apparel Fabrics

    OpenAIRE

    Redmore, Nicola

    2012-01-01

    This chapter considers the different woven manufacturing\\ud processes used in the production of apparel fabrics. It details the mainapparel fabric types and looks at the key performance requirements of those fabrics, in relation to both the weave structure and the fibre type. The chapter then goes on to briefly describe important considerations in the design process and the various end uses for woven fabric. Application examples detailed towards the end of the chapter include fabrics that are...

  11. Hybrid switch for resonant power converters

    Science.gov (United States)

    Lai, Jih-Sheng; Yu, Wensong

    2014-09-09

    A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

  12. Bipolar resistive switching and charge transport in silicon oxide memristor

    Energy Technology Data Exchange (ETDEWEB)

    Mikhaylov, Alexey N., E-mail: mian@nifti.unn.ru [Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950 (Russian Federation); Belov, Alexey I.; Guseinov, Davud V.; Korolev, Dmitry S.; Antonov, Ivan N.; Efimovykh, Denis V.; Tikhov, Stanislav V.; Kasatkin, Alexander P.; Gorshkov, Oleg N.; Tetelbaum, David I.; Bobrov, Alexander I.; Malekhonova, Natalia V.; Pavlov, Dmitry A. [Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950 (Russian Federation); Gryaznov, Evgeny G. [Lobachevsky State University of Nizhni Novgorod, 23/3 Gagarin Prospect, Nizhni Novgorod 603950 (Russian Federation); Sedakov Scientific-Research Institute, GSP-486, Nizhny Novgorod 603950 (Russian Federation); Yatmanov, Alexander P. [Sedakov Scientific-Research Institute, GSP-486, Nizhny Novgorod 603950 (Russian Federation)

    2015-04-15

    Graphical abstract: - Highlights: • Si-based thin-film memristor structure was fabricated by magnetron sputtering. • We study bipolar resistive switching and charge transport mechanisms. • Resistive switching parameters are determined by a balance between redox reactions. - Abstract: Reproducible bipolar resistive switching has been studied in SiO{sub x}-based thin-film memristor structures deposited by magnetron sputtering technique on the TiN/Ti metalized SiO{sub 2}/Si substrates. It is established that, after electroforming, the structure can be switched between the quasi-ohmic low-resistance state related to silicon chains (conducting filaments) and the high-resistance state with semiconductor-like hopping mechanism of charge transport through the defects in silicon oxide. The switching parameters are determined by a balance between the reduction and oxidation processes that, in turn, are driven by the value and polarity of voltage bias, current, temperature and device environment. The results can be used for the development of silicon-based nonvolatile memory and memristive systems as a key component of future electronics.

  13. Design, fabrication, testing and packaging of a silicon ...

    Indian Academy of Sciences (India)

    Design, fabrication, testing and packaging of a silicon micromachined radio frequency microelectromechanical series (RF MEMS) switch. M S Giridhar Ashwini Jambhalikar Jiju John R Islam Ananda Behera C L Nagendra George Thachil M P Srikanth Shailesh Somani B H M Darukesha Srinivasarao Bollu. Volume 38 Issue ...

  14. A Radical Switch

    Directory of Open Access Journals (Sweden)

    Alexander Rappaport

    2017-09-01

    Full Text Available Architecture is the most vulnerable part of culture, almost doomed to destruction of its fundamentals, while the rise of its intellectual and creative level is badly needed. However, neither the resort to postmarxist French philosophy nor bringing the results of development of science and technology into architecture, neither computerization nor peculiarities of parametricism and deconstructivism are helpful. It can be stated that in the beginning of the third millennium architecture and architectural education are in stalemate. The way out is in a “radical” switch from comprehension of object space to the time and to the processes of thinking, designing and historical change in professional mentality. The interests must be focused not on the object, but on the process enabling the use of return reflexive strokes as well.

  15. Battery switch for downhole tools

    Science.gov (United States)

    Boling, Brian E.

    2010-02-23

    An electrical circuit for a downhole tool may include a battery, a load electrically connected to the battery, and at least one switch electrically connected in series with the battery and to the load. The at least one switch may be configured to close when a tool temperature exceeds a selected temperature.

  16. Improved switch-resistor packaging

    Science.gov (United States)

    Redmerski, R. E.

    1980-01-01

    Packaging approach makes resistors more accessible and easily identified with specific switches. Failures are repaired more quickly because of improved accessibility. Typical board includes one resistor that acts as circuit breaker, and others are positioned so that their values can be easily measured when switch is operated. Approach saves weight by using less wire and saves valuable panel space.

  17. Task Switching: A PDP Model

    Science.gov (United States)

    Gilbert, Sam J.; Shallice, Tim

    2002-01-01

    When subjects switch between a pair of stimulus-response tasks, reaction time is slower on trial N if a different task was performed on trial N--1. We present a parallel distributed processing (PDP) model that simulates this effect when subjects switch between word reading and color naming in response to Stroop stimuli. Reaction time on "switch…

  18. A CMOS Switched Transconductor Mixer

    NARCIS (Netherlands)

    Klumperink, Eric A.M.; Louwsma, S.M.; Wienk, Gerhardus J.M.; Nauta, Bram

    A new CMOS active mixer topology can operate at low supply voltages by the use of switches exclusively connected to the supply voltages. Such switches require less voltage headroom and avoid gate-oxide reliability problems. Mixing is achieved by exploiting two transconductors with cross-coupled

  19. Controllable resistive switching in Au/Nb:SrTiO3 microscopic Schottky junctions

    Science.gov (United States)

    Wang, Yuhang; Shi, Xiaolan; Zhao, Kehan; Xie, Guanlin; Huang, Siyu; Zhang, Liuwan

    2016-02-01

    The reversible resistive switching effect at oxide interface shows promising applications in information storage and artificial intelligence. However, the microscopic switching mechanism is still elusive due to the difficulty of direct observation of the electrical and chemical behavior at the buried interface, which becomes a major barrier to design reliable, scalable, and reproducible devices. Here we used a gold-coated AFM tip as a removable electrode to investigate the resistive switching effect in a microscopic Au/Nb:SrTiO3 Schottky junction. We found that unlike the inhomogeneous random resistive switching in the macroscopic Schottky junctions, the high and low resistance states can be reversibly switched in a controllable way on the Nb-doped SrTiO3 surface by the conductive tip. The switching between the high and low resistance states in vacuum is accompanied by the reversible shift of the surface Fermi level. We indicate that the transfer of the interface oxygen ion in a double-well potential is responsible for the resistive switching in both macroscopic and microscopic Schottky junctions. Our findings provide a guide to optimize the key performance parameters of a resistive switching device such as operation voltage, switching speed, on/off ratio, and state retention time by proper electrode selection and fabrication strategy.

  20. Multi-polar resistance switching and memory effect in copper phthalocyanine junctions

    International Nuclear Information System (INIS)

    Qiao Shi-Zhu; Kang Shi-Shou; Li Qiang; Zhong Hai; Kang Yun; Yu Shu-Yun; Han Guang-Bing; Yan Shi-Shen; Mei Liang-Mo; Qin Yu-Feng

    2014-01-01

    Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar (unipolar and bipolar) resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of Al 2 O 3 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect. (interdisciplinary physics and related areas of science and technology)

  1. Three-terminal resistive switching memory in a transparent vertical-configuration device

    International Nuclear Information System (INIS)

    Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-01

    The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies

  2. Investigation of the synaptic device based on the resistive switching behavior in hafnium oxide

    Directory of Open Access Journals (Sweden)

    Bin Gao

    2015-02-01

    Full Text Available Metal-oxide based electronics synapse is promising for future neuromorphic computation application due to its simple structure and fab-friendly materials. HfOx resistive switching memory has been demonstrated superior performance such as high speed, low voltage, robust reliability, excellent repeatability, and so on. In this work, the HfOx synaptic device was investigated based on its resistive switching phenomenon. HfOx resistive switching device with different electrodes and dopants were fabricated. TiN/Gd:HfOx/Pt stack exhibited the best synaptic performance, including controllable multilevel ability and low training energy consumption. The training schemes for memory and forgetting were developed.

  3. Surface effects of electrode-dependent switching behavior of resistive random-access memory

    KAUST Repository

    Ke, Jr Jian

    2016-09-26

    The surface effects of ZnO-based resistive random-access memory (ReRAM) were investigated using various electrodes. Pt electrodes were found to have better performance in terms of the device\\'s switching functionality. A thermodynamic model of the oxygen chemisorption process was proposed to explain this electrode-dependent switching behavior. The temperature-dependent switching voltage demonstrates that the ReRAM devices fabricated with Pt electrodes have a lower activation energy for the chemisorption process, resulting in a better resistive switching performance. These findings provide an in-depth understanding of electrode-dependent switching behaviors and can serve as design guidelines for future ReRAM devices.

  4. Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

    KAUST Repository

    Mayet, Abdulilah M.

    2015-12-04

    © 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young\\'s modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.

  5. Switching Phenomena in a System with No Switches

    Science.gov (United States)

    Preis, Tobias; Stanley, H. Eugene

    2010-02-01

    It is widely believed that switching phenomena require switches, but this is actually not true. For an intriguing variety of switching phenomena in nature, the underlying complex system abruptly changes from one state to another in a highly discontinuous fashion. For example, financial market fluctuations are characterized by many abrupt switchings creating increasing trends ("bubble formation") and decreasing trends ("financial collapse"). Such switching occurs on time scales ranging from macroscopic bubbles persisting for hundreds of days to microscopic bubbles persisting only for a few seconds. We analyze a database containing 13,991,275 German DAX Future transactions recorded with a time resolution of 10 msec. For comparison, a database providing 2,592,531 of all S&P500 daily closing prices is used. We ask whether these ubiquitous switching phenomena have quantifiable features independent of the time horizon studied. We find striking scale-free behavior of the volatility after each switching occurs. We interpret our findings as being consistent with time-dependent collective behavior of financial market participants. We test the possible universality of our result by performing a parallel analysis of fluctuations in transaction volume and time intervals between trades. We show that these financial market switching processes have properties similar to those of phase transitions. We suggest that the well-known catastrophic bubbles that occur on large time scales—such as the most recent financial crisis—are no outliers but single dramatic representatives caused by the switching between upward and downward trends on time scales varying over nine orders of magnitude from very large (≈102 days) down to very small (≈10 ms).

  6. Resistive switching phenomena in TiOx nanoparticle layers for memory applications

    International Nuclear Information System (INIS)

    Goren, Emanuelle; Tsur, Yoed; Ungureanu, Mariana; Zazpe, Raul; Rozenberg, Marcelo; Hueso, Luis E.; Casanova, Fèlix; Stoliar, Pablo

    2014-01-01

    Electrical characteristics of a Co/ TiO x /Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO 2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO x nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.

  7. Model Reduction of Switched Systems Based on Switching Generalized Gramians

    DEFF Research Database (Denmark)

    Shaker, Hamid Reza; Wisniewski, Rafal

    2012-01-01

    In this paper, a general method for model order reduction of discrete-time switched linear systems is presented. The proposed technique uses switching generalized gramians. It is shown that several classical reduction methods can be developed into the generalized gramian framework for the model...... reduction of linear systems and for the reduction of switched systems. Discrete-time balanced reduction within a specified frequency interval is taken as an example within this framework. To avoid numerical instability and to increase the numerical efficiency, a generalized gramian-based Petrov...

  8. FABRIC QUALITY CONTROL SYSTEMS

    Directory of Open Access Journals (Sweden)

    Özlem KISAOĞLU

    2006-02-01

    Full Text Available Woven fabric quality depends on yarn properties at first, then weaving preparation and weaving processes. Defect control of grey and finished fabric is done manually on the lighted tables or automatically. Fabrics can be controlled by the help of the image analysis method. In image system the image of fabrics can be digitized by video camera and after storing controlled by the various processing. Recently neural networks, fuzzy logic, best wavelet packet model on automatic fabric inspection are developed. In this study the advantages and disadvantages of manual and automatic, on-line fabric inspection systems are given comparatively.

  9. DETERMINANT OF DOWNWARD AUDITOR SWITCHING

    Directory of Open Access Journals (Sweden)

    Totok Budisantoso

    2017-12-01

    Full Text Available Abstract: Determinant of Downward Auditor Switching. This study examines the factors that influence downward auditor switching in five ASEAN countries. Fixed effect logistic regression was used as analytical method. This study found that opinion shopping occurred in ASEAN, especially in distress companies. Companies with complex businesses will retain the Big Four auditors to reduce complexity and audit costs. Audit and public committees serve as guardians of auditor quality. On the other hand, shareholders failed to maintain audit quality. It indicates that there is entrenchment effect in auditor switching.

  10. Low-Loss, High-Isolation Microwave Microelectromechanical Systems (MEMS) Switches Being Developed

    Science.gov (United States)

    Ponchak, George E.

    2002-01-01

    Switches, electrical components that either permit or prevent the flow of electricity, are the most important and widely used electrical devices in integrated circuits. In microwave systems, switches are required for switching between the transmitter and receiver; in communication systems, they are needed for phase shifters in phased-array antennas, for radar and communication systems, and for the new class of digital or software definable radios. Ideally, switches would be lossless devices that did not depend on the electrical signal's frequency or power, and they would not consume electrical power to change from OFF to ON or to maintain one of these two states. Reality is quite different, especially at microwave frequencies. Typical switches in microwave integrated circuits are pin diodes or gallium arsenide (GaAs) field-effect transistors that are nonlinear, with characteristics that depend on the power of the signal. In addition, they are frequency-dependent, lossy, and require electrical power to maintain a certain state. A new type of component has been developed that overcomes most of these technical difficulties. Microelectromechanical (MEMS) switches rely on mechanical movement as a response to an applied electrical force to either transmit or reflect electrical signal power. The NASA Glenn Research Center has been actively developing MEMS for microwave applications for over the last 5 years. Complete fabrication procedures have been developed so that the moving parts of the switch can be released with near 100-percent yield. Moreover, the switches fabricated at Glenn have demonstrated state-of-the-art performance. A typical MEMS switch is shown. The switch extends over the signal and ground lines of a finite ground coplanar waveguide, a commonly used microwave transmission line. In the state shown, the switch is in the UP state and all the microwave power traveling along the transmission line proceeds unimpeded. When a potential difference is applied

  11. Solid state bistable power switch

    Science.gov (United States)

    Bartko, J.; Shulman, H.

    1970-01-01

    Tin and copper provide high current and switching time capabilities for high-current resettable fuses. They show the best performance for trip current and degree of reliability, and have low coefficients of thermal expansion.

  12. Electron collisions in gas switches

    International Nuclear Information System (INIS)

    Christophorou, L.G.

    1989-01-01

    Many technologies rely on the conduction/insulation properties of gaseous matter for their successful operation. Many others (e.g., pulsed power technologies) rely on the rapid change (switching or modulation) of the properties of gaseous matter from an insulator to a conductor and vice versa. Studies of electron collision processes in gases aided the development of pulsed power gas switches, and in this paper we shall briefly illustrate the kind of knowledge on electron collision processes which is needed to optimize the performance of such switching devices. To this end, we shall refer to three types of gas switches: spark gap closing, self-sustained diffuse discharge closing, and externally-sustained diffuse discharge opening. 24 refs., 15 figs., 2 tabs

  13. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

    2012-01-20

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  14. A Piezoelectric Cryogenic Heat Switch

    Science.gov (United States)

    Jahromi, Amir E.; Sullivan, Dan F.

    2014-01-01

    We have measured the thermal conductance of a mechanical heat switch actuated by a piezoelectric positioner, the PZHS (PieZo electric Heat Switch), at cryogenic temperatures. The thermal conductance of the PZHS was measured between 4 K and 10 K, and on/off conductance ratios greater than 100 were achieved when the positioner applied its maximum force of 8 N. We discuss the advantages of using this system in cryogenic applications, and estimate the ultimate performance of an optimized PZHS.

  15. Chromatic interocular-switch rivalry

    Science.gov (United States)

    Christiansen, Jens H.; D'Antona, Anthony D.; Shevell, Steven K.

    2017-01-01

    Interocular-switch rivalry (also known as stimulus rivalry) is a kind of binocular rivalry in which two rivalrous images are swapped between the eyes several times a second. The result is stable periods of one image and then the other, with stable intervals that span many eye swaps (Logothetis, Leopold, & Sheinberg, 1996). Previous work used this close kin of binocular rivalry with rivalrous forms. Experiments here test whether chromatic interocular-switch rivalry, in which the swapped stimuli differ in only chromaticity, results in slow alternation between two colors. Swapping equiluminant rivalrous chromaticities at 3.75 Hz resulted in slow perceptual color alternation, with one or the other color often continuously visible for two seconds or longer (during which there were 15+ eye swaps). A well-known theory for sustained percepts from interocular-switch rivalry with form is inhibitory competition between binocular neurons driven by monocular neurons with matched orientation tuning in each eye; such binocular neurons would produce a stable response when a given orientation is swapped between the eyes. A similar model can account for the percepts here from chromatic interocular-switch rivalry and is underpinned by the neurophysiological finding that color-preferring binocular neurons are driven by monocular neurons from each eye with well-matched chromatic selectivity (Peirce, Solomon, Forte, & Lennie, 2008). In contrast to chromatic interocular-switch rivalry, luminance interocular-switch rivalry with swapped stimuli that differ in only luminance did not result in slowly alternating percepts of different brightnesses. PMID:28510624

  16. Photochemical cutting of fabrics

    Science.gov (United States)

    Piltch, Martin S.

    1994-01-01

    Apparatus for the cutting of garment patterns from one or more layers of fabric. A laser capable of producing laser light at an ultraviolet wavelength is utilized to shine light through a pattern, such as a holographic phase filter, and through a lens onto the one or more layers of fabric. The ultraviolet laser light causes rapid photochemical decomposition of the one or more layers of fabric, but only along the pattern. The balance of the fabric of the one or more layers of fabric is undamaged.

  17. Magnetic-fluid-based smart centrifugal switch

    CERN Document Server

    Bhatt, R P

    2002-01-01

    A new type of centrifugal switch, which we call 'smart centrifugal switch' is designed and developed utilizing the novel properties of magnetic fluid. No mechanical movement is involved in the sensing and switching operations of this centrifugal switch and both these operations are achieved in a smart way. The performance of the switch is studied. This switch has several important advantages over conventional centrifugal switches like smart and non-contact type operation, sparkless and hence explosion proof working and inertia-less simple structure.

  18. Improvement of resistive switching in ZnO film by Ti doping

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongxia; Chen, Qi; Chen, Xueping [Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018 (China); Mao, Qinan [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Xi, Junhua [Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018 (China); State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Ji, Zhenguo, E-mail: jizg@hdu.edu.cn [Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018 (China); State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)

    2013-06-30

    Pt/ZnO:Ti/n{sup +}–Si structures that showed reversible and steady resistive switching behaviors were fabricated by magnetron sputtering. The stability of the devices was improved by Ti doping and the switching mechanism of the resistive switching was theoretically studied under the guidance of the first principles. The influences of different Ti atomic doping concentrations on the crystal structure and resistive switching characteristics were also investigated. The results revealed that the oxygen vacancy appears easily around the Ti ions since the formation energies of oxygen vacancies had the minimum value when it located at the next nearest neighboring to Ti atoms. - Highlights: • ZnO:Ti based resistive random access memories were fabricated. • Effects of doping concentrations on the switching characteristics were investigated. • Formation energies of oxygen vacancy in ZnO were studied by the first-principles. • The Pt/ZnO:Ti(2%)/n{sup +}–Si cell has the optimal resistive switching characteristics.

  19. Fluctuation-induced switching and the switching path distribution.

    Science.gov (United States)

    Dykman, Mark

    2009-03-01

    Fluctuation-induced switching is at the root of diverse phenomena currently studied in Josephson junctions, nano-mechanical systems, nano-magnets, and optically trapped atoms. In a fluctuation leading to switching the system must overcome an effective barrier, making switching events rare, for low fluctuation intensity. We will provide an overview of the methods of finding the switching barrier for systems away from thermal equilibrium. Generic features of the barrier, such as scaling with the system parameters, will be discussed. We will also discuss the motion of the system in switching and the ways of controlling it. Two major classes of systems will be considered: dynamical systems, where fluctuations are induced by noise, and birth-death systems. Even though the motion during switching is random, the paths followed in switching form a narrow tube in phase space of the system centered at the most probable path. The paths distribution is generally Gaussian and has specific features, which have been seen in the experiment [1]. Finding the most probable path itself can be reduced to solving a problem of Hamiltonian dynamics of an auxiliary noise-free system. The solution also gives the switching barrier. The barrier can be found explicitly close to parameter values where the number of stable states of the system changes and the dynamics is controlled by a slow variable. The scaling of the barrier height depends on the type of the corresponding bifurcation. We show that, both for birth-death and for Gaussian noise driven systems, the presence of even weak non-Gaussian noise can strongly modify the switching rate. The effect is described in a simple explicit form [2,3]. Weak deviations of the noise statistics from Gaussian can be sensitively detected using balanced dynamical bridge, where this deviation makes the populations of coexisting stable states different from each other; a realization of such a bridge will be discussed. We will also discuss the sharp

  20. Laser microstructuring for fabricating superhydrophobic polymeric surfaces

    Science.gov (United States)

    Cardoso, M. R.; Tribuzi, V.; Balogh, D. T.; Misoguti, L.; Mendonça, C. R.

    2011-02-01

    In this paper we show the fabrication of hydrophobic polymeric surfaces through laser microstructuring. By using 70-ps pulses from a Q-switched and mode-locked Nd:YAG laser at 532 nm, we were able to produce grooves with different width and separation, resulting in square-shaped pillar patterns. We investigate the dependence of the morphology on the surface static contact angle for water, showing that it is in agreement with the Cassie-Baxter model. We demonstrate the fabrication of a superhydrophobic polymeric surface, presenting a water contact angle of 157°. The surface structuring method presented here seems to be an interesting option to control the wetting properties of polymeric surfaces.

  1. A Switch Is Not a Switch: Syntactically-Driven Bilingual Language Control

    Science.gov (United States)

    Gollan, Tamar H.; Goldrick, Matthew

    2018-01-01

    The current study investigated the possibility that language switches could be relatively automatically triggered by context. "Single-word switches," in which bilinguals switched languages on a single word in midsentence and then immediately switched back, were contrasted with more complete "whole-language switches," in which…

  2. Resistive switching in polycrystalline YMnO3 thin films

    Directory of Open Access Journals (Sweden)

    A. Bogusz

    2014-10-01

    Full Text Available We report a unipolar, nonvolatile resistive switching in polycrystalline YMnO3 thin films grown by pulsed laser deposition and sandwiched between Au top and Ti/Pt bottom electrodes. The ratio of the resistance in the OFF and ON state is larger than 103. The observed phenomena can be attributed to the formation and rupture of conductive filaments within the multiferroic YMnO3 film. The generation of conductive paths under applied electric field is discussed in terms of the presence of grain boundaries and charged domain walls inherently formed in hexagonal YMnO3. Our findings suggest that engineering of the ferroelectric domains might be a promising route for designing and fabrication of novel resistive switching devices.

  3. A smart microelectromechanical sensor and switch triggered by gas

    KAUST Repository

    Bouchaala, Adam M.

    2016-07-05

    There is an increasing interest to realize smarter sensors and actuators that can deliver a multitude of sophisticated functionalities while being compact in size and of low cost. We report here combining both sensing and actuation on the same device based on a single microstructure. Specifically, we demonstrate a smart resonant gas (mass) sensor, which in addition to being capable of quantifying the amount of absorbed gas, can be autonomously triggered as an electrical switch upon exceeding a preset threshold of absorbed gas. Toward this, an electrostatically actuated polymer microbeam is fabricated and is then functionalized with a metal-organic framework, namely, HKUST-1. The microbeam is demonstrated to absorb vapors up to a certain threshold, after which is shown to collapse through the dynamic pull-in instability. Upon pull-in, the microstructure can be made to act as an electrical switch to achieve desirable actions, such as alarming.

  4. Morphing hydrogel patterns by thermo-reversible fluorescence switching.

    Science.gov (United States)

    Bat, Erhan; Lin, En-Wei; Saxer, Sina; Maynard, Heather D

    2014-07-01

    Stimuli responsive surfaces that show reversible fluorescence switching behavior in response to temperature changes were fabricated. Oligo(ethylene glycol) methacrylate thermoresponsive polymers with amine end-groups were prepared by atom transfer radical polymerization (ATRP). The polymers were patterned on silicon surfaces by electron beam (e-beam) lithography, followed by conjugation of self-quenching fluorophores. Fluorophore conjugated hydrogel thin films were bright when the gels were swollen; upon temperature-induced collapse of the gels, self-quenching of the fluorophores led to significant attenuation of fluorescence. Importantly, the fluorescence was regained when the temperature was cooled. The fluorescence switching behavior of the hydrogels for up to ten cycles was investigated and the swelling-collapse was verified by atomic force microscopy. Morphing surfaces that change shape several times upon increase in temperature were obtained by patterning multiple stimuli responsive polymers. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Optimal [Formula: see text] -symmetric switch features exceptional point.

    Science.gov (United States)

    Lupu, Anatole; Konotop, Vladimir V; Benisty, Henri

    2017-10-16

    We consider the optimization problem of least energy-cost path in open systems that are described by non-Hermitian Hamiltonians. We apply it to find the optimal gain-loss profile for a non-uniform PT-symmetric coupler performing a binary transfer function. We bring evidence that the gain-loss profile fulfilling this requirement corresponds to a non-conventional situation where light intensity is conserved at every point along the PT-symmetric system. Besides, we find that the optimal profile corresponds to a practically important case of optical switching operation achieved with minimal amount of aggregate amplification level. We show that switching architectures using such type of gain-loss profiles are much more advantageous than conventional uniform PT-symmetric couplers in terms of gain and energy. Furthermore, this type of optimal profile turns out to be robust against fabrication imperfections. This opens new prospects for functional applications of PT-symmetric devices in photonics.

  6. Q-Switched Nd: YAG Laser Micro-Machining System

    International Nuclear Information System (INIS)

    Messaoud, S.; Allam, A.; Siserir, F.; Bouceta, Y.; Kerdja, T.; Ouadjaout, D.

    2008-01-01

    In this paper, we present the design of a low cost Q-switched Nd: YAG laser micro-machining system for photo masks fabrication. It consists of: Nd:YAG laser source, beam delivery system, X-Y table, PC, The CCD camera and TV monitor. The synchronization between the laser source and the X-Y table is realised by NI PCI-7342, the two axis MID-7602 and LabVIEW based program. The first step of this work consists of engraving continuous and discontinuous lines on a thin film metal with a 100 μm resolution by using the YG 980 Quantel Q-switched Nd:YAG laser.

  7. Investigation of switching region in superlattice phase change memories

    Science.gov (United States)

    Ohyanagi, T.; Takaura, N.

    2016-10-01

    We investigated superlattice phase change memories (PCMs) to clarify which regions were responsible for switching. We observed atomic structures in a superlattice PCM film with a stack of GeTe / Sb2Te3 layers using atomically resolved EDX maps, and we found an intermixed region with three atom species of the Ge, Sb and Te around the top GeTe layer under the top electrode. We also found that a device with a GeTe layer on an Sb2Te3 layer without superlattice structure had the same switching characteristics as a device with a superlattice PCM, that had the same top GeTe layer. We developed and fabricated a modified superlattice PCM that attained ultra low Reset / Set currents under 60 μ A .

  8. Switching Activity Estimation of CIC Filter Integrators

    OpenAIRE

    Abbas, Muhammad; Gustafsson, Oscar

    2010-01-01

    In this work, a method for estimation of the switching activity in integrators is presented. To achieve low power, it is always necessary to develop accurate and efficient methods to estimate the switching activity. The switching activities are then used to estimate the power consumption. In our work, the switching activity is first estimated for the general purpose integrators and then it is extended for the estimation of switching activity in cascaded integrators in CIC filters. ©2010 I...

  9. Principles of broadband switching and networking

    CERN Document Server

    Liew, Soung C

    2010-01-01

    An authoritative introduction to the roles of switching and transmission in broadband integrated services networks Principles of Broadband Switching and Networking explains the design and analysis of switch architectures suitable for broadband integrated services networks, emphasizing packet-switched interconnection networks with distributed routing algorithms. The text examines the mathematical properties of these networks, rather than specific implementation technologies. Although the pedagogical explanations in this book are in the context of switches, many of the fundamenta

  10. Switching dynamics of TaOx-based threshold switching devices

    Science.gov (United States)

    Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

    2018-03-01

    Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

  11. IGBT: a solid state switch

    International Nuclear Information System (INIS)

    Chatroux, D.; Maury, J.; Hennevin, B.

    1993-01-01

    A Copper Vapour Laser Power Supply has been designed using a solid state switch consisting in eighteen Isolated Gate Bipolar Transistors (IGBT), -1200 volts, 400 Amps, each-in parallel. This paper presents the Isolated Gate Bipolar Transistor (IGBTs) replaced in the Power Electronic components evolution, and describes the IGBT conduction mechanism, presents the parallel association of IGBTs, and studies the application of these components to a Copper Vapour Laser Power Supply. The storage capacitor voltage is 820 volts, the peak current of the solid state switch is 17.000 Amps. The switch is connected on the primary of a step-up transformer, followed by a magnetic modulator. The reset of the magnetic modulator is provided by part of the laser reflected energy with a patented circuit. The charging circuit is a resonant circuit with a charge controlled by an IGBT switch. When the switch is open, the inductance energy is free-wheeled by an additional winding and does not extend the charging phase of the storage capacitor. The design allows the storage capacitor voltage to be very well regulated. This circuit is also patented. The electric pulse in the laser has 30.000 Volt peak voltage, 2000 Amp peak current, and is 200 nanoseconds long, for a 200 Watt optical power Copper Vapour Laser

  12. Photoresistance switching of plasmonic nanopores.

    Science.gov (United States)

    Li, Yi; Nicoli, Francesca; Chen, Chang; Lagae, Liesbet; Groeseneken, Guido; Stakenborg, Tim; Zandbergen, Henny W; Dekker, Cees; Van Dorpe, Pol; Jonsson, Magnus P

    2015-01-14

    Fast and reversible modulation of ion flow through nanosized apertures is important for many nanofluidic applications, including sensing and separation systems. Here, we present the first demonstration of a reversible plasmon-controlled nanofluidic valve. We show that plasmonic nanopores (solid-state nanopores integrated with metal nanocavities) can be used as a fluidic switch upon optical excitation. We systematically investigate the effects of laser illumination of single plasmonic nanopores and experimentally demonstrate photoresistance switching where fluidic transport and ion flow are switched on or off. This is manifested as a large (∼ 1-2 orders of magnitude) increase in the ionic nanopore resistance and an accompanying current rectification upon illumination at high laser powers (tens of milliwatts). At lower laser powers, the resistance decreases monotonically with increasing power, followed by an abrupt transition to high resistances at a certain threshold power. A similar rapid transition, although at a lower threshold power, is observed when the power is instead swept from high to low power. This hysteretic behavior is found to be dependent on the rate of the power sweep. The photoresistance switching effect is attributed to plasmon-induced formation and growth of nanobubbles that reversibly block the ionic current through the nanopore from one side of the membrane. This explanation is corroborated by finite-element simulations of a nanobubble in the nanopore that show the switching and the rectification.

  13. Impact of deposition parameters on the performance of ceria based resistive switching memories

    International Nuclear Information System (INIS)

    Zhang, Lepeng; Younis, Adnan; Chu, Dewei; Li, Sean

    2016-01-01

    Resistive-switching memories stacked in a metal–insulator–metal (MIM) like structure have shown great potential for next generation non-volatile memories. In this study, ceria based resistive memory stacks are fabricated by implementing different sputter conditions (temperatures and powers). The films deposited at low temperatures were found to have random grain orientations, less porosity and dense structure. The effect of deposition conditions on resistive switching characteristics of as-prepared films were also investigated. Improved and reliable resistive switching behaviors were achieved for the memory devices occupying less porosity and densely packed structures prepared at low temperatures. Finally, the underlying switching mechanism was also explained on the basis of quantitative analysis. (paper)

  14. Analyzing and designing of reliable multicast based on FEC in distributed switch

    Science.gov (United States)

    Luo, Ting; Yu, Shaohua; Wang, Xueshun

    2008-11-01

    AS businesses become more dependent on IP networks, lots of real-time services are adopted and high availability in networks has become increasingly critical. With the development of carrier grade ethernet, the requirements of high speed metro ethernet device are more urgently. In order to reach the capacity of hundreds of Gbps or Tbps, most of core ethernet switches almost adopted distributed control architecture and large capacity forwarding fabric. When distributed switch works, they always have one CE and many FE. There for, it shows the feature of multicast with one sender and many receivers. It is deserved research for us how to apply reliable multicast to distributed switch inner communication system. In this paper, we present the general architecture of a distributed ethernet switch, focusing on analysis the model of internal communication subsystem. According to its character, a novel reliable multicast communication mechanism based on FEC recovery algorithm has been applied and evaluated in experiment.

  15. Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects

    KAUST Repository

    Wu, Xing

    2018-04-14

    Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n++ Si as the bottom electrode with Ni‐electrode/HfOx/SiO2 asymmetric self‐rectifying resistive switching device is fabricated. The interfacial defects in the HfOx/SiO2 junction and n++ Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation–dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni‐rich conductive filament modifies the resistive switching effect. This study has important implications at the array‐level performance of high density resistive switching memories.

  16. Fabrics for aeronautic construction

    Science.gov (United States)

    Walen, E D

    1918-01-01

    The Bureau of Standards undertook the investigation of airplane fabrics with the view of finding suitable substitutes for the linen fabrics, and it was decided that the fibers to be considered were cotton, ramie, silk, and hemp. Of these, the cotton fiber was the logical one to be given primary consideration. Report presents the suitability, tensibility and stretching properties of cotton fabric obtained by laboratory tests.

  17. Fabricating architectural volume

    DEFF Research Database (Denmark)

    Feringa, Jelle; Søndergaard, Asbjørn

    2015-01-01

    The 2011 edition of Fabricate inspired a number of collaborations, this article seeks to highlight three of these. There is a common thread amongst the projects presented: sharing the ambition to close the rift between design and fabrication while incorporating structural design aspects early on....... The development of fabrication techniques in the work presented is considered an inherent part of architectural design and shares the aspiration of developing approaches to manufacturing architecture that are scalable to architectural proportions1 and of practical relevance....

  18. Portable Userspace Virtual Filesystem Switch

    Directory of Open Access Journals (Sweden)

    Łukasz Faber

    2013-01-01

    Full Text Available Multiple different filesystems — including disk-based, network, distributed, abstract — arean integral part of every operating system. They are usually written as kernel modules and abstracted to the user via a virtual filesystem switch. In this paper we analyse the feasibility of reimplementing the virtual filesystem switch as a userspace daemon and applicability of this approach in real-life usage. Such reimplementation will require a way to virtualise processes behaviour related to filesystem operations. The problem is non-trivial, as we assume limited capabilities of the VFS switch implemented in userspace. We present a layered architecture comprising of a monitoring process, the VFS abstraction and real filesystem implementations. All working in userspace. Then, we evaluate this solution in four areas: portability, feasibility, usability and performance. Our results demonstrate possible gains in using the userspace-based approach with monolithic kernels, but also underline problems that are encountered in this approach.

  19. All-fiber polarization switch

    Science.gov (United States)

    Knape, Harald; Margulis, Walter

    2007-03-01

    We report an all-fiber polarization switch made out of silica-based microstructured fiber suitable for Q-switching all-fiber lasers. Nanosecond high-voltage pulses are used to heat and expand an internal electrode to cause λ/2-polarization rotation in less than 10 ns for 1.5 μm light. The 10 cm long component has an experimentally measured optical insertion loss of 0.2 dB and a 0-10 kHz repetition frequency capacity and has been durability tested for more than 109 pulses.

  20. Industry switching in developing countries

    DEFF Research Database (Denmark)

    Newman, Carol; Rand, John; Tarp, Finn

    2013-01-01

    Firm turnover (i.e., firm entry and exit) is a well-recognized source of sector-level productivity growth. In contrast, the role and importance of firms that switch activities from one sector to another is not well understood. Firm switchers are likely to be unique, differing from both newly...... and behavior than do entry and exit firms. Switchers tend to be labor intensive and to seek competitive opportunities in labor-intensive sectors in response to changes in market environments. Moreover, resource reallocation resulting from switching forms an important component of productivity growth. The topic...

  1. CMOS integrated switching power converters

    CERN Document Server

    Villar-Pique, Gerard

    2011-01-01

    This book describes the structured design and optimization of efficient, energy processing integrated circuits. The approach is multidisciplinary, covering the monolithic integration of IC design techniques, power electronics and control theory. In particular, this book enables readers to conceive, synthesize, design and implement integrated circuits with high-density high-efficiency on-chip switching power regulators. Topics covered encompass the structured design of the on-chip power supply, efficiency optimization, IC-compatible power inductors and capacitors, power MOSFET switches and effi

  2. Vibration interference analysis and verification of micro-fluidic inertial switch

    Directory of Open Access Journals (Sweden)

    Liu Tingting

    2014-02-01

    Full Text Available The micro-fluidic inertial switch based on liquid metal utilizes the moving mercury droplet to close the switch under the action of acceleration, which is characterized by no moving parts, small contact resistance, long service life and large current. In addition to the requirement of response time, accuracy and reliability, the micro-fluidic inertial switch needs to overcome the impact of the ambient vibration. The influence of the ambient vibration on the performance of switch is investigated by loading pulse or sinusoidal interference signals in the X, Y and Z direction. The numerical results suggest that the performance of micro-fluidic inertial switch is greatly affected by impact interference signal in X sensitive direction as compared with low frequency harmonic signal. If the impact signal with high amplitude lasts only for a short time, the wrong operation might also occur. The interference signals in insensitive direction have a relatively small impact on the performance of switch, and the impact of interference signal can be reduced by reasonable structural design. Finally, anodic bonding, deep reactive ion etching (DRIE and sputtering technique are adopted to fabricate the micro-fluidic inertial switch. The acceleration threshold of the prototype is tested. The experiment results agree with the numerical results, which indicate that the simulation method is valid.

  3. Non-switching to switching transferring mechanism investigation for Ag/SiO x /p-Si structure with SiO x deposited by HWCVD

    Science.gov (United States)

    Liu, Yanhong; Wang, Ruoying; Li, Zhongyue; Wang, Song; Huang, Yang; Peng, Wei

    2018-04-01

    We proposed and fabricated an Ag/SiO x /p-Si sandwich structure, in which amorphous SiO x films were deposited through hot wire chemical vapor deposition (HWCVD) using tetraethylorthosilicate (TEOS) as Si and O precursor. Experimental results indicate that the I–V properties of this structure transfer from non-switching to switching operation as the SiO x deposition temperature increased. The device with SiO x deposited at high deposition temperature exhibits typical bipolar switching properties, which can be potentially used in resistive switching random accessible memory (RRAM). The transferring mechanism from non-switching to switching can be ascribed to the change of structural and electronic properties of SiO x active layer deposited at different temperatures, as evidenced by analyzing FTIR spectrum and fitting its I–V characteristics curves. This work demonstrates a safe and practicable low-temperature device-grade SiO x film deposition technology by conducting HWCVD from TEOS.

  4. Wavelength conversion in optical packet switching

    DEFF Research Database (Denmark)

    Danielsen, Søren Lykke; Hansen, Peter Bukhave; Stubkjær, Kristian

    1998-01-01

    A detailed traffic analysis of optical packet switch design is performed. Special consideration is given to the complexity of the optical buffering and the overall switch block structure is considered in general. Wavelength converters are shown to improve the traffic performance of the switch...... blocks for both random and bursty traffic. Furthermore, the traffic performance of switch blocks with add-drop switches has been assessed in a Shufflenetwork showing the advantage of having converters at the inlets. Finally, the aspect of synchronization is discussed through a proposal to operate...... the packet switch block asynchronously, i.e. without packet alignment at the input...

  5. Switching in electrical transmission and distribution systems

    CERN Document Server

    Smeets, René; Kapetanovic, Mirsad; Peelo, David F; Janssen, Anton

    2014-01-01

    Switching in Electrical Transmission and Distribution Systems presents the issues and technological solutions associated with switching in power systems, from medium to ultra-high voltage. The book systematically discusses the electrical aspects of switching, details the way load and fault currents are interrupted, the impact of fault currents, and compares switching equipment in particular circuit-breakers. The authors also explain all examples of practical switching phenomena by examining real measurements from switching tests. Other highlights include: up to date commentary on new develo

  6. Laser-fabricated castor oil-capped silver nanoparticles

    Science.gov (United States)

    Zamiri, Reza; Zakaria, Azmi; Abbastabar, Hossein; Darroudi, Majid; Husin, Mohd Shahril; Mahdi, Mohd Adzir

    2011-01-01

    Silver nanoparticles were fabricated by ablation of a pure silver plate immersed in castor oil. A Nd:YAG-pulsed Q-switch laser with 1064-nm wavelength and 10-Hz frequency was used to ablate the plate for 10 minutes. The sample was characterized by ultraviolet-visible, atomic absorption, Fourier transform-infrared spectroscopies, and transmission electron microscopy. The results of the fabricated sample showed that the nanoparticles in castor oil were about 5-nm in diameter, well dispersed, and showed stability for a long period of time. PMID:21698083

  7. Laser-fabricated castor oil-capped silver nanoparticles.

    Science.gov (United States)

    Zamiri, Reza; Zakaria, Azmi; Abbastabar, Hossein; Darroudi, Majid; Husin, Mohd Shahril; Mahdi, Mohd Adzir

    2011-01-01

    Silver nanoparticles were fabricated by ablation of a pure silver plate immersed in castor oil. A Nd:YAG-pulsed Q-switch laser with 1064-nm wavelength and 10-Hz frequency was used to ablate the plate for 10 minutes. The sample was characterized by ultraviolet-visible, atomic absorption, Fourier transform-infrared spectroscopies, and transmission electron microscopy. The results of the fabricated sample showed that the nanoparticles in castor oil were about 5-nm in diameter, well dispersed, and showed stability for a long period of time.

  8. Fabricating architectural volume

    DEFF Research Database (Denmark)

    Feringa, Jelle; Søndergaard, Asbjørn

    2015-01-01

    The 2011 edition of Fabricate inspired a number of collaborations, this article seeks to highlight three of these. There is a common thread amongst the projects presented: sharing the ambition to close the rift between design and fabrication while incorporating structural design aspects early on...

  9. Smart Fabrics Technology Development

    Science.gov (United States)

    Simon, Cory; Potter, Elliott; Potter, Elliott; McCabe, Mary; Baggerman, Clint

    2010-01-01

    Advances in Smart Fabrics technology are enabling an exciting array of new applications for NASA exploration missions, the biomedical community, and consumer electronics. This report summarizes the findings of a brief investigation into the state of the art and potential applications of smart fabrics to address challenges in human spaceflight.

  10. Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

    KAUST Repository

    Huang, Yi-Jen

    2016-04-07

    The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO substrate with ITO as the top electrode exhibits both the memory switching and threshold switching functions. When the device is used for resistive switching, it is forming-free for resistive memory applications with low operation voltage (<±1 V) and self-compliance to current up to 50 μA. When it is used for threshold switching, the low threshold current is beneficial for improving the device selectivity. The variation of oxygen distribution measured by energy dispersive X-ray spectroscopy and scanning transmission electron microscopy indicates the formation or rupture of conducting filaments in the device at different resistance states. It is therefore suggested that the push and pull actions of oxygen ions in the amorphous TiOx and polycrystalline TiOx films during the voltage sweep account for the memory switching and threshold switching properties in the device.

  11. VO{sub 2}-like thermo-optical switching effect in one-dimensional nonlinear defective photonic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Juan, E-mail: juanzhang@staff.shu.edu.cn, E-mail: ywang@siom.ac.cn; Zhang, Rongjun [Key Laboratory of Specialty Fiber Optics and Optical Access Networks, School of Communication and Information Engineering, Shanghai University, Shanghai 200072 (China); Wang, Yang, E-mail: juanzhang@staff.shu.edu.cn, E-mail: ywang@siom.ac.cn [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

    2015-06-07

    A new approach to achieve VO{sub 2}-like thermo-optical switching in a one-dimensional photonic crystal by the combination of thermo-optical and optical Kerr effects was proposed and numerically demonstrated in this study. The switching temperature and the hysteresis width can be tuned in a wide temperature range. Steep transition, high optical contrast, and low pumping power can be achieved at the same time. This kind of one-dimensional photonic crystal-based bistable switch will be low-cost, easy-to-fabricate, and versatile in practical applications compared with traditional VO{sub 2}-type one.

  12. Multiuser switched diversity scheduling schemes

    KAUST Repository

    Shaqfeh, Mohammad

    2012-09-01

    Multiuser switched-diversity scheduling schemes were recently proposed in order to overcome the heavy feedback requirements of conventional opportunistic scheduling schemes by applying a threshold-based, distributed, and ordered scheduling mechanism. The main idea behind these schemes is that slight reduction in the prospected multiuser diversity gains is an acceptable trade-off for great savings in terms of required channel-state-information feedback messages. In this work, we characterize the achievable rate region of multiuser switched diversity systems and compare it with the rate region of full feedback multiuser diversity systems. We propose also a novel proportional fair multiuser switched-based scheduling scheme and we demonstrate that it can be optimized using a practical and distributed method to obtain the feedback thresholds. We finally demonstrate by numerical examples that switched-diversity scheduling schemes operate within 0.3 bits/sec/Hz from the ultimate network capacity of full feedback systems in Rayleigh fading conditions. © 2012 IEEE.

  13. Soliton switching in directional couplers

    NARCIS (Netherlands)

    Valkering, T.P.; Hoekstra, Hugo; de Boer, Pieter-Tjerk

    1999-01-01

    The mechanism of pulse switching is investigated analytically and numerically for a family of initial conditions with a solitonlike pulse in one channel and no signal on the other channel of the coupler. This investigation is performed directly in the coupled nonlinear Schroedinger equations that

  14. Intrinsic nanofilamentation in resistive switching

    KAUST Repository

    Wu, Xing

    2013-03-15

    Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.

  15. Switching Costs in Accounting Services

    Directory of Open Access Journals (Sweden)

    Fatih Koç

    2015-06-01

    Full Text Available Switching cost is defined as possible costs that customers may encounter when they want to change the firm they buy service, and an important subject in terms of accounting services. Particularly, small business entrepreneurs’ not having knowledge about accounting procedures, and sharing private information with accounting firms make switching costs more important for accounting services. Thus, the aim of this study is to investigate the concept of switching costs (relational cost, procedural cost and financial cost, its determinants (perceived service quality, service importance, and service failures, and consequences (re-purchasing, and recommen ding to others. Theresearch was conducted on small business entrepreneurs in down-town of Balıkesir in Turkey. Total 405 small business entrepreneur owners were interviewed. According to results of the study, perceived service quality positively affects all dimensions of switching costs, significance of service positively affects procedural and relational costs, and service failures negatively affect procedural and relational costs. The results showed that while procedural and relational costs positively affect re-purchasing and recommending to others variables, financial cost did not have any effect on these variables.

  16. Nanoscale organic ferroelectric resistive switches

    NARCIS (Netherlands)

    Khikhlovskyi, V.; Wang, R.; Breemen, A.J.J.M. van; Gelinck, G.H.; Janssen, R.A.J.; Kemerink, M.

    2014-01-01

    Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their

  17. Switching processes in financial markets.

    Science.gov (United States)

    Preis, Tobias; Schneider, Johannes J; Stanley, H Eugene

    2011-05-10

    For an intriguing variety of switching processes in nature, the underlying complex system abruptly changes from one state to another in a highly discontinuous fashion. Financial market fluctuations are characterized by many abrupt switchings creating upward trends and downward trends, on time scales ranging from macroscopic trends persisting for hundreds of days to microscopic trends persisting for a few minutes. The question arises whether these ubiquitous switching processes have quantifiable features independent of the time horizon studied. We find striking scale-free behavior of the transaction volume after each switching. Our findings can be interpreted as being consistent with time-dependent collective behavior of financial market participants. We test the possible universality of our result by performing a parallel analysis of fluctuations in time intervals between transactions. We suggest that the well known catastrophic bubbles that occur on large time scales--such as the most recent financial crisis--may not be outliers but single dramatic representatives caused by the formation of increasing and decreasing trends on time scales varying over nine orders of magnitude from very large down to very small.

  18. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2013-07-03

    Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

  19. Androgenic switch in barley microspores

    NARCIS (Netherlands)

    de Faria Maraschin, Simone

    2005-01-01

    Barley androgenesis represents an attractive system to study stress-induced cell differentiation and is a valuable tool for efficient plant breeding. The switch from the pollen developmental pathway towards an androgenic route involves several well-described morphological changes. However, little is

  20. Microstrip PIN diode microwave switch

    OpenAIRE

    Usanov, Dmitry A.; Skripal, A. V.; Kulikov, M. Yu.

    2011-01-01

    A possibility of creating narrow-band electrically controlled microwave breakers and switches with enhanced attenuation level in the blocking mode has been considered. The specified devices are based on the structure containing a short-circuited microstrip link with connected capacitor and the loop coupler, in the center of which is located a PIN diode.

  1. Incorrect predictions reduce switch costs.

    Science.gov (United States)

    Kleinsorge, Thomas; Scheil, Juliane

    2015-07-01

    In three experiments, we combined two sources of conflict within a modified task-switching procedure. The first source of conflict was the one inherent in any task switching situation, namely the conflict between a task set activated by the recent performance of another task and the task set needed to perform the actually relevant task. The second source of conflict was induced by requiring participants to guess aspects of the upcoming task (Exps. 1 & 2: task identity; Exp. 3: position of task precue). In case of an incorrect guess, a conflict accrues between the representation of the guessed task and the actually relevant task. In Experiments 1 and 2, incorrect guesses led to an overall increase of reaction times and error rates, but they reduced task switch costs compared to conditions in which participants predicted the correct task. In Experiment 3, incorrect guesses resulted in faster performance overall and to a selective decrease of reaction times in task switch trials when the cue-target interval was long. We interpret these findings in terms of an enhanced level of controlled processing induced by a combination of two sources of conflict converging upon the same target of cognitive control. Copyright © 2015 Elsevier B.V. All rights reserved.

  2. The Atlas load protection switch

    CERN Document Server

    Davis, H A; Dorr, G; Martínez, M; Gribble, R F; Nielsen, K E; Pierce, D; Parsons, W M

    1999-01-01

    Atlas is a high-energy pulsed-power facility under development to study materials properties and hydrodynamics experiments under extreme conditions. Atlas will implode heavy liner loads (m~45 gm) with a peak current of 27-32 MA delivered in 4 mu s, and is energized by 96, 240 kV Marx generators storing a total of 23 MJ. A key design requirement for Atlas is obtaining useful data for 95601130f all loads installed on the machine. Materials response calculations show current from a prefire can damage the load requiring expensive and time consuming replacement. Therefore, we have incorporated a set of fast-acting mechanical switches in the Atlas design to reduce the probability of a prefire damaging the load. These switches, referred to as the load protection switches, short the load through a very low inductance path during system charge. Once the capacitors have reached full charge, the switches open on a time scale short compared to the bank charge time, allowing current to flow to the load when the trigger pu...

  3. Resistive switching in TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Lin

    2011-10-26

    The continuing improved performance of the digital electronic devices requires new memory technologies which should be inexpensively fabricated for higher integration capacity, faster operation, and low power consumption. Resistive random access memory has great potential to become the front runner as the non volatile memory technology. The resistance states stored in such cell can remain for long time and can be read out none-destructively by a very small electrical pulse. In this work the typically two terminal memory cells containing a thin TiO{sub 2} layer are studied. Polycrystalline TiO{sub 2} thin films are deposited with atomic layer deposition and magnetron reactive sputtering processes, which are both physically and electrically characterized. The resistive switching cells are constructed in a metal/TiO{sub 2}/metal structure. Electroforming process initiate the cell from the beginning good insulator to a real memory cell to program the resistive states. Multilevel resistive bipolar switching controlled by current compliance is the common characteristic observed in these cells, which is potentially to be used as so called multi-bit memory cells to improve the memory capacity. With different top electrodes of Pt, Cu, Ag the resistive switching behaviors are studied. The switching behaviors are different depending on the top metal such as the minimum current compliance, the endurance of the programmed resistance states and the morphology change during the switching. The temperature dependence of different resistance states are investigated. A reduction of the activation energy and their possible conduction mechanisms is discussed on the base of the basic current conduction models. It is found that the resistance state transfers from semiconductor to metallic property with the reducing resistances. The calculated temperature coefficients of their metallic states on the Cu/TiO{sub 2}/Pt and Ag/TiO{sub 2}/Pt are very close to the reported literature data

  4. Inkjet-Printed Flexible MEMS Switches for Phased-Array Antennas

    Directory of Open Access Journals (Sweden)

    Mahmuda Akter Monne

    2018-01-01

    Full Text Available This paper presents a fully inkjet-printed flexible MEMS switch for phased-array antennas. The physical structure of the printed MEMS switch consists of an anchor with a clamp-clamp beam, a sacrificial layer, and bottom transmission lines. 5-mil Kapton® polyimide film is used as a flexible substrate material. Two different types of conductive ink PEDOT : PSS from Sigma Aldrich and silver nanoparticle ink from NovaCentrix are used for the fabrication of different printed layers. Layer-by-layer fabrication process and material evaluation are illustrated. Layer characterization is done with respect to critical thickness and resistance using 2D/3D material analysis. Fujifilm Dimatix Material Printer (DMP-2800 is used for fabrication, and KLA-Tencor (P-7 profiler is used for 2D and 3D analysis of each layer. The MEMS switch has a low actuation voltage of 1.2 V, current capacity of 0.2195 mA, a current on-off ratio of 2195 : 1, and an RF insertion loss of 5 dB up to 13.5 GHz. Printed MEMS switch technology is a promising candidate for flexible and reconfigurable phased-array antennas and other radio frequency (RF and microwave frequency applications.

  5. Switch-connected HyperX network

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Dong; Heidelberger, Philip

    2018-02-13

    A network system includes a plurality of sub-network planes and global switches. The sub-network planes have a same network topology as each other. Each of the sub-network planes includes edge switches. Each of the edge switches has N ports. Each of the global switches is configured to connect a group of edge switches at a same location in the sub-network planes. In each of the sub-network planes, some of the N ports of each of the edge switches are connected to end nodes, and others of the N ports are connected to other edge switches in the same sub-network plane, other of the N ports are connected to at least one of the global switches.

  6. Wide Bandgap Extrinsic Photoconductive Switches

    Science.gov (United States)

    Sullivan, James Stephen

    Wide Bandgap Extrinsic Photoconductive Switches Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6H-SiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators. The successful development of a vanadium compensated, 6H-SiC extrinsic photoconductive switch for use as a closing switch for compact accelerator applications was realized by improvements made to the vanadium, nitrogen and boron impurity densities. The changes made to the impurity densities were based on the physical intuition outlined and simple rate equation models. The final 6H-SiC impurity 'recipe' calls for vanadium, nitrogen and boron densities of 2.5 e17 cm-3, 1.25e17 cm-3 and ≤ 1e16 cm-3, respectively. This recipe was originally developed to maximize the quantum efficiency of the vanadium compensated 6H-SiC, while maintaining a thermally stable semi-insulating material. The rate equation models indicate that, besides increasing the quantum efficiency, the impurity recipe should be expected to also increase the carrier recombination time. Three generations of 6H-SiC materials were tested. The

  7. 49 CFR 236.822 - Switch, spring.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Switch, spring. 236.822 Section 236.822... Switch, spring. A switch equipped with a spring device which forces the points to their original position after being trailed through and holds them under spring compression. ...

  8. A gain-coefficient switched Alexandrite laser

    International Nuclear Information System (INIS)

    Lee, Chris J; Van der Slot, Peter J M; Boller, Klaus-J

    2013-01-01

    We report on a gain-coefficient switched Alexandrite laser. An electro-optic modulator is used to switch between high and low gain states by making use of the polarization dependent gain of Alexandrite. In gain-coefficient switched mode, the laser produces 85 ns pulses with a pulse energy of 240 mJ at a repetition rate of 5 Hz.

  9. Bootstrapped Low-Voltage Analog Switches

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper

    1999-01-01

    Novel low-voltage constant-impedance analog switch circuits are proposed. The switch element is a single MOSFET, and constant-impedance operation is obtained using simple circuits to adjust the gate and bulk voltages relative to the switched signal. Low-voltage (1-volt) operation is made feasible...

  10. A CW Gunn diode bistable switching element.

    Science.gov (United States)

    Hurtado, M.; Rosenbaum, F. J.

    1972-01-01

    Experiments with a current-controlled bistable switching element using a CW Gunn diode are reported. Switching rates of the order of 10 MHz have been obtained. Switching is initiated by current pulses of short duration (5-10 ns). Rise times of the order of several nanoseconds could be obtained.

  11. Caffeine improves anticipatory processes in task switching

    NARCIS (Netherlands)

    Tieges, Zoe; Snel, Jan; Kok, Albert; Wijnen, Jasper G.; Lorist, Monicque M.; Ridderinkhof, K. Richard

    We studied the effects of moderate amounts of caffeine on task switching and task maintenance using mixed-task (AABB) blocks, in which participants alternated predictably between two tasks, and single-task (AAAA, BBBB) blocks. Switch costs refer to longer reaction times (RT) on task switch trials

  12. Switching antidepressants | Outhoff | South African Family Practice

    African Journals Online (AJOL)

    ... worsening depression or unpleasant discontinuation reactions. Switching strategies to minimise these risks include immediate switching, cross-tapering or incorporating a washout period. Immediate switching is generally possible when substituting a selective serotonin reuptake inhibitor or a serotonin and noradrenaline ...

  13. 47 CFR 69.106 - Local switching.

    Science.gov (United States)

    2010-10-01

    ... foreign services that use local exchange switching facilities. (c) If end users of an interstate or... local exchange carriers shall establish rate elements for local switching as follows: (1) Price cap... use local exchange switching facilities for the provision of interstate or foreign services. The...

  14. A Shape Memory Alloy Based Cryogenic Thermal Conduction Switch

    International Nuclear Information System (INIS)

    Krishnan, V.B.; Singh, J.D.; Woodruff, T.R.; Vaidyanathan, R.; Notardonato, W.U.

    2004-01-01

    Shape memory alloys (SMAs) can produce large strains when deformed (e.g., up to 8%). Heating results in a phase transformation and associated recovery of all the accumulated strain. This strain recovery can occur against large forces, resulting in their use as actuators. Thus an SMA element can integrate both sensory and actuation functions, by inherently sensing a change in temperature and actuating by undergoing a shape change as a result of a temperature-induced phase transformation. Two aspects of our work on cryogenic SMAs are addressed here. First - a shape memory alloy based cryogenic thermal conduction switch for operation between dewars of liquid methane and liquid oxygen in a common bulkhead arrangement is discussed. Such a switch integrates the sensor element and the actuator element and can be used to create a variable thermal sink to other cryogenic tanks for liquefaction, densification, and zero boil-off systems for advanced spaceport applications. Second - fabrication via arc-melting and subsequent materials testing of SMAs with cryogenic transformation temperatures for use in the aforementioned switch is discussed

  15. Degree of Conversational Code-Switching Enhances Verbal Task Switching in Cantonese-English Bilinguals

    Science.gov (United States)

    Yim, Odilia; Bialystok, Ellen

    2012-01-01

    The study examined individual differences in code-switching to determine the relationship between code-switching frequency and performance in verbal and non-verbal task switching. Seventy-eight Cantonese-English bilinguals completed a semi-structured conversation to quantify natural code-switching, a verbal fluency task requiring language…

  16. A dual-stimuli-responsive fluorescent switch ultrathin film

    Science.gov (United States)

    Li, Zhixiong; Liang, Ruizheng; Liu, Wendi; Yan, Dongpeng; Wei, Min

    2015-10-01

    Stimuli-responsive fluorescent switches have shown broad applications in optical devices, biological materials and intelligent responses. Herein, we describe the design and fabrication of a dual-stimuli-responsive fluorescent switch ultrathin film (UTF) via a three-step layer-by-layer (LBL) technique: (i) encapsulation of spiropyran (SP) within an amphiphilic block copolymer (PTBEM) to give the (SP@PTBEM) micelle; (ii) the mixture of riboflavin (Rf) and poly(styrene 4-sulfonate) (PSS) to enhance the adhesion ability of small molecules; (iii) assembly of negatively charged SP@PTBEM and Rf-PSS with cationic layered double hydroxide (LDH) nanoplatelets to obtain the (Rf-PSS/LDH/SP@PTBEM)n UTFs (n: bilayer number). The assembly process of the UTFs and their luminescence properties, as monitored by fluorescence spectroscopy and scanning electron microscopy (SEM), present a uniform and ordered layered structure with stepwise growth. The resulting Rf-PSS/LDH/SP@PTBEM UTF serves as a three-state switchable multicolor (green, yellow, and red) luminescent system based on stimulation from UV/Vis light and pH, with an acceptable reversibility. Therefore, this work provides a facile way to fabricate stimuli-responsive solid-state film switches with tunable-color luminescence, which have potential applications in the areas of displays, sensors, and rewritable optical memory and fluorescent logic devices.Stimuli-responsive fluorescent switches have shown broad applications in optical devices, biological materials and intelligent responses. Herein, we describe the design and fabrication of a dual-stimuli-responsive fluorescent switch ultrathin film (UTF) via a three-step layer-by-layer (LBL) technique: (i) encapsulation of spiropyran (SP) within an amphiphilic block copolymer (PTBEM) to give the (SP@PTBEM) micelle; (ii) the mixture of riboflavin (Rf) and poly(styrene 4-sulfonate) (PSS) to enhance the adhesion ability of small molecules; (iii) assembly of negatively charged SP

  17. Slow-light total-internal-reflection switch with bending angle of 30 deg.

    Science.gov (United States)

    Fuchida, Ayumi; Matsutani, Akihiro; Koyama, Fumio

    2011-07-15

    Slowing light in a Bragg reflector waveguide is used to miniaturize optical waveguide switches. We can realize a giant equivalent refractive index change induced by carrier injection near a cutoff wavelength due to its large waveguide dispersion. We fabricate and characterize a reflection-type slow-light switch. Input light is reflected at the off state due to an equivalent index difference between an oxide aperture and an oxide region, while it passes through at the on state, since the equivalent index difference is compensated using carrier injection. We obtained a large bending angle of 30° with total internal reflection of slow light. © 2011 Optical Society of America

  18. Design and realization of a tactile switches module with capacitive sensing method implemented with a microcontroller

    Directory of Open Access Journals (Sweden)

    Lorenzo Capineri

    2016-08-01

    Full Text Available The aim of this research project is the architecture and the design of an electronic system for controlling domestic tactile switches to be integrated into a home automation system based on the KNX standard. All the steps that led to the fulfillment of the finished prototype are reported, from the study and design of the capacitive tactile sensors and the electronic control board according to the specifications imposed by KNX standard. The touch event detection is reached as a trade-off with the footprint requirements of the switch. Experimental results of the fabricated prototype are presented to demonstrate the feasibility of this device.

  19. Study on Resistive Switching Property of Ti Doped Novel NiO Thin Films

    Science.gov (United States)

    Li, Y.; Zhao, G. Y.; Kou, Z. B.; Liu, J. C.; Zhu, R.

    2018-01-01

    Ti doped nickel oxide thin films have been fabricated by sol-gel dip-coating process using nickel acetate and tetrabutyl titanate as source materials. The effect of the amount of Ti dopant on the surface roughness, optical, chemical state and electrical properties of NiO: Ti thin films was observed by atomic force microscopy (AFM), Uv-vis spectroscopy, X-ray photoelectron spectroscopy(XPS) and I-V measurement, respectively. Results show that the Ti doping is an effective ways to improve the resistive switching behaviors and it is a convenient way to understand the mechanism of the resistive switching behaviors.

  20. Design and Simulation of RF MEMS Switch for Wireless Communication Applications

    Directory of Open Access Journals (Sweden)

    Girija Sravani K.

    2015-12-01

    Full Text Available In this paper, we have reported the design and analysis of a novel bulk-silicon fabricated RF MEMS capacitive switch. This RF switch has a short response time, low power consumption, and an IC compatible design. To lower the driving voltage and insertion loss, multiple geometries for the movable beam, membrane, and air gap are investigated using Software tool Comsol Multiphysics. Potential thermal stresses and deflection of the cantilever due to the application of forces have been investigated. Performance of the device under the application of forces also studied using the software.

  1. Fabrics in Function

    DEFF Research Database (Denmark)

    Bang, Anne Louise

    2007-01-01

    to the establishment of an initial framework for the project it has a focus on how to explore costumers and users emotional experiences with fabrics. The three year research project is based on experimental design research and the textile designer's competences and knowledge. During the research project exploring...... sensing of fabrics in function. It is proposed that tactile and visual sensing of fabrics is a way to investigate and express emotional utility values. The further purpose is to use experiments with repertory grid models as part of the mapping of the entire research project and also as a basis...

  2. Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches

    Science.gov (United States)

    Cooper, James A.

    1986-01-01

    A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

  3. Shape memory thermal conduction switch

    Science.gov (United States)

    Vaidyanathan, Rajan (Inventor); Krishnan, Vinu (Inventor); Notardonato, William U. (Inventor)

    2010-01-01

    A thermal conduction switch includes a thermally-conductive first member having a first thermal contacting structure for securing the first member as a stationary member to a thermally regulated body or a body requiring thermal regulation. A movable thermally-conductive second member has a second thermal contacting surface. A thermally conductive coupler is interposed between the first member and the second member for thermally coupling the first member to the second member. At least one control spring is coupled between the first member and the second member. The control spring includes a NiTiFe comprising shape memory (SM) material that provides a phase change temperature <273 K, a transformation range <40 K, and a hysteresis of <10 K. A bias spring is between the first member and the second member. At the phase change the switch provides a distance change (displacement) between first and second member by at least 1 mm, such as 2 to 4 mm.

  4. Switch for Good Community Program

    Energy Technology Data Exchange (ETDEWEB)

    Crawford, Tabitha [Balfour Beatty Military Housing Management LLC, Newtown Square, PA (United States); Amran, Martha [WattzOn, Inc., Mountain View, CA (United States)

    2013-11-19

    Switch4Good is an energy-savings program that helps residents reduce consumption from behavior changes; it was co-developed by Balfour Beatty Military Housing Management (BB) and WattzOn in Phase I of this grant. The program was offered at 11 Navy bases. Three customer engagement strategies were evaluated, and it was found that Digital Nudges (a combination of monthly consumption statements with frequent messaging via text or email) was most cost-effective. The program was delivered on-time and on-budget, and its success is based on the teamwork of local BB staff and the WattzOn team. The following graphic shows Switch4Good “by the numbers”, e.g. the scale of operations achieved during Phase I.

  5. Negation switching invariant signed graphs

    Directory of Open Access Journals (Sweden)

    Deepa Sinha

    2014-04-01

    Full Text Available A signed graph (or, $sigraph$ in short is a graph G in which each edge x carries a value $\\sigma(x \\in \\{-, +\\}$ called its sign. Given a sigraph S, the negation $\\eta(S$ of the sigraph S is a sigraph obtained from S by reversing the sign of every edge of S. Two sigraphs $S_{1}$ and $S_{2}$ on the same underlying graph are switching equivalent if it is possible to assign signs `+' (`plus' or `-' (`minus' to vertices of $S_{1}$ such that by reversing the sign of each of its edges that has received opposite signs at its ends, one obtains $S_{2}$. In this paper, we characterize sigraphs which are negation switching invariant and also see for what sigraphs, S and $\\eta (S$ are signed isomorphic.

  6. Large aperture optical switching devices

    International Nuclear Information System (INIS)

    Goldhar, J.; Henesian, M.A.

    1983-01-01

    We have developed a new approach to constructing large aperture optical switches for next generation inertial confinement fusion lasers. A transparent plasma electrode formed in low pressure ionized gas acts as a conductive coating to allow the uniform charging of the optical faces of an electro-optic material. In this manner large electric fields can be applied longitudinally to large aperture, high aspect ratio Pockels cells. We propose a four-electrode geometry to create the necessary high conductivity plasma sheets, and have demonstrated fast (less than 10 nsec) switching in a 5x5 cm aperture KD*P Pockels cell with such a design. Detaid modelling of Pockels cell performance with plasma electrodes has been carried out for 15 and 30 cm aperture designs

  7. Construction, fabrication, and installation

    International Nuclear Information System (INIS)

    1992-05-01

    This standard specifies the construction, fabrication, and installation requirements that apply to concrete containment structures of a containment system designated as class containment components, parts and appurtenances for nuclear power plants

  8. Experimental Fabrication Facility

    Data.gov (United States)

    Federal Laboratory Consortium — Provides aviation fabrication support to special operations aircraft residing at Fort Eustis and other bases in the United States. Support is also provided to AATD...

  9. Alloy Fabrication Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — At NETL’s Alloy Fabrication Facility in Albany, OR, researchers conduct DOE research projects to produce new alloys suited to a variety of applications, from gas...

  10. Resistive Switching Assisted by Noise

    OpenAIRE

    Patterson, G. A.; Fierens, P. I.; Grosz, D. F.

    2013-01-01

    We extend results by Stotland and Di Ventra on the phenomenon of resistive switching aided by noise. We further the analysis of the mechanism underlying the beneficial role of noise and study the EPIR (Electrical Pulse Induced Resistance) ratio dependence with noise power. In the case of internal noise we find an optimal range where the EPIR ratio is both maximized and independent of the preceding resistive state. However, when external noise is considered no beneficial effect is observed.

  11. Switching strategies to optimize search

    Science.gov (United States)

    Shlesinger, Michael F.

    2016-03-01

    Search strategies are explored when the search time is fixed, success is probabilistic and the estimate for success can diminish with time if there is not a successful result. Under the time constraint the problem is to find the optimal time to switch a search strategy or search location. Several variables are taken into account, including cost, gain, rate of success if a target is present and the probability that a target is present.

  12. Nuclear Fabrication Consortium

    Energy Technology Data Exchange (ETDEWEB)

    Levesque, Stephen [EWI, Columbus, OH (United States)

    2013-04-05

    This report summarizes the activities undertaken by EWI while under contract from the Department of Energy (DOE) Office of Nuclear Energy (NE) for the management and operation of the Nuclear Fabrication Consortium (NFC). The NFC was established by EWI to independently develop, evaluate, and deploy fabrication approaches and data that support the re-establishment of the U.S. nuclear industry: ensuring that the supply chain will be competitive on a global stage, enabling more cost-effective and reliable nuclear power in a carbon constrained environment. The NFC provided a forum for member original equipment manufactures (OEM), fabricators, manufacturers, and materials suppliers to effectively engage with each other and rebuild the capacity of this supply chain by : Identifying and removing impediments to the implementation of new construction and fabrication techniques and approaches for nuclear equipment, including system components and nuclear plants. Providing and facilitating detailed scientific-based studies on new approaches and technologies that will have positive impacts on the cost of building of nuclear plants. Analyzing and disseminating information about future nuclear fabrication technologies and how they could impact the North American and the International Nuclear Marketplace. Facilitating dialog and initiate alignment among fabricators, owners, trade associations, and government agencies. Supporting industry in helping to create a larger qualified nuclear supplier network. Acting as an unbiased technology resource to evaluate, develop, and demonstrate new manufacturing technologies. Creating welder and inspector training programs to help enable the necessary workforce for the upcoming construction work. Serving as a focal point for technology, policy, and politically interested parties to share ideas and concepts associated with fabrication across the nuclear industry. The report the objectives and summaries of the Nuclear Fabrication Consortium

  13. Fabricating nuclear components

    International Nuclear Information System (INIS)

    Anon.

    1977-01-01

    Activities of the Nuclear Engineering Division of Vickers Ltd., particularly fabrication of long slim tubular components for power reactors and the construction of irradiation loops and rigs, are outlined. The processes include hydraulic forming for fabrication of various types of tubes and outer cases of fuel transfer buckets, various specialised welding operations including some applications of the TIG process, and induction brazing of specialised assemblies. (U.K.)

  14. Molecular wires, switches and memories

    Science.gov (United States)

    Chen, Jia

    Molecular electronics, an emerging field, makes it possible to build individual molecules capable of performing functions identical or analogous to present- day conductors, switches, or memories. These individual molecules, with a nano-meter scale characteristic length, can be designed and chemically synthesized with specific atoms, geometries and charge distribution. This thesis focuses on the design, and measurements of molecular wires, and related strategically engineered structures-molecular switches and memories. The experimental system relies on a thermodynamically driven self-assembling process to attach molecules onto substrate surfaces without intervention from outside. The following topics will be discussed: directed nanoscale manipulation of self-assembled molecules using scanning tunneling microscope; investigation on through-bond transport of nanoscale symmetric metal/conjugated self- assembled monolayers (SAM)/metal junctions, where non- Ohmic thermionic emission was observed to be the dominant process, with isocyanide-Pd contacts showing the lowest thermionic barrier of 0.22 eV; the first realization of robust and large reversible switching behavior in an electronic device that utilizes molecules containing redox centers as the active component, exhibiting negative differential resistance (NDR) and large on-off peak-to-valley ratio (PVR); observation of erasable storage of higher conductivity states in these redox- center containing molecular devices, and demonstration of a two-terminal electronically programmable and erasable molecular memory cell with long bit retention time.

  15. Analytical Performance Evaluation of Different Switch Solutions

    Directory of Open Access Journals (Sweden)

    Francisco Sans

    2013-01-01

    Full Text Available The virtualization of the network access layer has opened new doors in how we perceive networks. With this virtualization of the network, it is possible to transform a regular PC with several network interface cards into a switch. PC-based switches are becoming an alternative to off-the-shelf switches, since they are cheaper. For this reason, it is important to evaluate the performance of PC-based switches. In this paper, we present a performance evaluation of two PC-based switches, using Open vSwitch and LiSA, and compare their performance with an off-the-shelf Cisco switch. The RTT, throughput, and fairness for UDP are measured for both Ethernet and Fast Ethernet technologies. From this research, we can conclude that the Cisco switch presents the best performance, and both PC-based switches have similar performance. Between Open vSwitch and LiSA, Open vSwitch represents a better choice since it has more features and is currently actively developed.

  16. Streamer model for high voltage water switches

    International Nuclear Information System (INIS)

    Sazama, F.J.; Kenyon, V.L. III

    1979-01-01

    An electrical switch model for high voltage water switches has been developed which predicts streamer-switching effects that correlate well with water-switch data from Casino over the past four years and with switch data from recent Aurora/AMP experiments. Preclosure rounding and postclosure resistive damping of pulseforming line voltage waveforms are explained in terms of spatially-extensive, capacitive-coupling of the conducting streamers as they propagate across the gap and in terms of time-dependent streamer resistance and inductance. The arc resistance of the Casino water switch and of a gas switch under test on Casino was determined by computer fit to be 0.5 +- 0.1 ohms and 0.3 +- 0.06 ohms respectively, during the time of peak current in the power pulse. Energy lost in the water switch during the first pulse is 18% of that stored in the pulseforming line while similar energy lost in the gas switch is 11%. The model is described, computer transient analyses are compared with observed water and gas switch data and the results - switch resistance, inductance and energy loss during the primary power pulse - are presented

  17. Synchronization in complex networks with switching topology

    International Nuclear Information System (INIS)

    Wang, Lei; Wang, Qing-guo

    2011-01-01

    This Letter investigates synchronization issues of complex dynamical networks with switching topology. By constructing a common Lyapunov function, we show that local and global synchronization for a linearly coupled network with switching topology can be evaluated by the time average of second smallest eigenvalues corresponding to the Laplacians of switching topology. This result is quite powerful and can be further used to explore various switching cases for complex dynamical networks. Numerical simulations illustrate the effectiveness of the obtained results in the end. -- Highlights: → Synchronization of complex networks with switching topology is investigated. → A common Lyapunov function is established for synchronization of switching network. → The common Lyapunov function is not necessary to monotonically decrease with time. → Synchronization is determined by the second smallest eigenvalue of its Laplacian. → Synchronization criterion can be used to investigate various switching cases.

  18. Pinning Synchronization of Switched Complex Dynamical Networks

    Directory of Open Access Journals (Sweden)

    Liming Du

    2015-01-01

    Full Text Available Network topology and node dynamics play a key role in forming synchronization of complex networks. Unfortunately there is no effective synchronization criterion for pinning synchronization of complex dynamical networks with switching topology. In this paper, pinning synchronization of complex dynamical networks with switching topology is studied. Two basic problems are considered: one is pinning synchronization of switched complex networks under arbitrary switching; the other is pinning synchronization of switched complex networks by design of switching when synchronization cannot achieved by using any individual connection topology alone. For the two problems, common Lyapunov function method and single Lyapunov function method are used respectively, some global synchronization criteria are proposed and the designed switching law is given. Finally, simulation results verify the validity of the results.

  19. Ka-Band, MEMS Switched Line Phase Shifters Implemented in Finite Ground Coplanar Waveguide

    Science.gov (United States)

    Scardelletti, Maximilian C.; Ponchak, George E.; Varaljay, Nicholas C.

    2005-01-01

    Ka-band MEMS switched line phase shifters implemented in finite ground coplanar waveguide are described in this paper. The phase shifters are constructed of single-pole double-throw (SPDT) switches with additional reference and phase offset transmission line lengths. The one- and two-bit phase shifters are fabricated on high resistivity (HR) silicon with a dielectric constant, Epsilon(sub T) = 11.7 and a substrate thickness, t = 500microns. The switching architectures integrated within the phase shifters consist of MEMS switches that are doubly anchored cantilever beam capacitive switches with additional high inductive sections (MEMS LC device). The SPDT switch is composed of a T-junction with a MEMS LC device at each output port. The one-bit phase shifter described in this paper has an insertion loss (IL) and return loss (RL) of 0.9 dB and 30 dB while the two-bit described has an IL and RL of 1.8 dB and 30 dB respectively. The one-bit phase shifter's designed offset phase is 22.5deg and actual measured phase shift is 21.8deg. The two-bit phase shifter's designed offset phase is 22.5deg, 45deg, and 67.5deg and the actual measured phase shifts are 21.4deg, 44.2deg, and 65.8deg, respectively.

  20. Design and partial implementation of RSFQ-based Batcher-banyan switch and support tools

    Science.gov (United States)

    Zinoviev, Dmitry Yurievich

    This paper describes the results of the analysis and implementation of ultra-fast low-power superconductor digital switching cores based on Rapid Single-Flux-Quantum (RSFQ) technology. In particular, RSFQ circuits for implementation of crossbar, Batcher-banyan and TDM shared bus switching cores are considered, and possible parameters of these circuits are estimated. The results show that the proposed RSFQ digital switches with overall throughput of 2.88 Tbps per chip operating at the exchange frequencies of ˜30GHz and dissipating very little power could effectively compete with their semiconductor and photonic counterparts. Based upon the results of the analysis, the Batcher-banyan switching core was chosen for the hardware implementation. Several low-level architectures of the so-called beta element, or 2 x 2 cross-point switch, and also address decoders for a sorting and for an expanding network nodes, were developed and mapped onto RSFQ elementary cells. We consider the support tools and concepts used for the simulation, modeling, and testing of the switching network, namely, physical-level and gate-level simulators of complex RSFQ circuits. Octopux-an automated setup for low-speed testing of digital and analog superconductor circuits-is also presented. A TDM-based beta-element which constitutes one of the most important parts of the core, and the systolic clock distribution network, were designed, fabricated in 3.5 μm niobium-trilayer technology and tested using Octopux.

  1. Micro optical fiber display switch based on the magnetohydrodynamic (MHD) principle

    Science.gov (United States)

    Lian, Kun; Heng, Khee-Hang

    2001-09-01

    This paper reports on a research effort to design, microfabricate and test an optical fiber display switch based on magneto hydrodynamic (MHD) principal. The switch is driven by the Lorentz force and can be used to turn on/off the light. The SU-8 photoresist and UV light source were used for prototype fabrication in order to lower the cost. With a magnetic field supplied by an external permanent magnet, and a plus electrical current supplied across the two inert sidewall electrodes, the distributed body force generated will produce a pressure difference on the fluid mercury in the switch chamber. By change the direction of current flow, the mercury can turn on or cut off the light pass in less than 10 ms. The major advantages of a MHD-based micro-switch are that it does not contain any solid moving parts and power consumption is much smaller comparing to the relay type switches. This switch can be manufactured by molding gin batch production and may have potential applications in extremely bright traffic control,, high intensity advertising display, and communication.

  2. Mechanical switching of ferroelectric domains beyond flexoelectricity

    Science.gov (United States)

    Chen, Weijin; Liu, Jianyi; Ma, Lele; Liu, Linjie; Jiang, G. L.; Zheng, Yue

    2018-02-01

    The resurgence of interest in flexoelectricity has prompted discussions on the feasibility of switching ferroelectric domains 'non-electrically'. In this work, we perform three-dimensional thermodynamic simulations in combination with ab initio calculations and effective Hamiltonian simulations to demonstrate the great effects of surface screening and surface bonding on ferroelectric domain switching triggered by local tip loading. A three-dimensional simulation scheme has been developed to capture the tip-induced domain switching behavior in ferroelectric thin films by adequately taking into account the surface screening effect and surface bonding effect of the ferroelectric film, as well as the finite elastic stiffness of the substrate and the electrode layers. The major findings are as follows. (i) Compared with flexoelectricity, surface effects can be overwhelming and lead to much more efficient mechanical switching caused by tip loading. (ii) The surface-assisted mechanical switching can be bi-directional without the necessity of reversing strain gradients. (iii) A mode transition from local to propagating domain switching occurs when the screening below a critical value. A ripple effect of domain switching appears with the formation of concentric loop domains. (iv) The ripple effect can lead to 'domain interference' and a deterministic writing of confined loop domain patterns by local excitations. Our study reveals the hidden switching mechanisms of ferroelectric domains and the possible roles of surface in mechanical switching. The ripple effect of domain switching, which is believed to be general in dipole systems, broadens our current knowledge of domain engineering.

  3. Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure.

    Science.gov (United States)

    Kim, Tae-Wook; Choi, Hyejung; Oh, Seung-Hwan; Jo, Minseok; Wang, Gunuk; Cho, Byungjin; Kim, Dong-Yu; Hwang, Hyunsang; Lee, Takhee

    2009-01-14

    The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 x 40 microm(2) to 200 x 200 nm(2). From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (I(ON)/I(OFF) approximately 10(4)), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10,000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.

  4. Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure

    International Nuclear Information System (INIS)

    Kim, Tae-Wook; Choi, Hyejung; Oh, Seung-Hwan; Jo, Minseok; Wang, Gunuk; Cho, Byungjin; Kim, Dong-Yu; Hwang, Hyunsang; Lee, Takhee

    2009-01-01

    The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 x 40 μm 2 to 200 x 200 nm 2 . From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (I ON /I OFF ∼10 4 ), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10 000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.

  5. Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films.

    Science.gov (United States)

    Shang, Jie; Xue, Wuhong; Ji, Zhenghui; Liu, Gang; Niu, Xuhong; Yi, Xiaohui; Pan, Liang; Zhan, Qingfeng; Xu, Xiao-Hong; Li, Run-Wei

    2017-06-01

    Flexible and transparent resistive switching memories are highly desired for the construction of portable and even wearable electronics. Upon optimization of the microstructure wherein an amorphous-nanocrystalline hafnium oxide thin film is fabricated, an all-oxide based transparent RRAM device with stable resistive switching behavior that can withstand a mechanical tensile stress of up to 2.12% is obtained. It is demonstrated that the superior electrical, thermal and mechanical performance of the ITO/HfO x /ITO device can be ascribed to the formation of pseudo-straight metallic hafnium conductive filaments in the switching layer, and is only limited by the choice of electrode materials. When the ITO bottom electrode is replaced with platinum metal, the mechanical failure threshold of the device can be further extended.

  6. Stable switching of resistive random access memory on the nanotip array electrodes

    KAUST Repository

    Tsai, Kun-Tong

    2016-09-13

    The formation/rupture of conducting filaments (CFs) in resistive random access memory (ReRAM) materials tune the electrical conductivities non-volatilely and are largely affected by its material composition [1], internal configurations [2] and external environments [3,4]. Therefore, controlling repetitive formation/rupture of CF as well as the spatial uniformity of formed CF are fundamentally important for improving the resistive switching (RS) performance. In this context, we have shown that by adding a field initiator, typically a textured electrode, both performance and switching uniformity of ReRAMs can be improved dramatically [5]. In addition, despite its promising characteristics, the scalable fabrication and structural homogeneity of such nanostructured electrodes are still lacking or unattainable, making miniaturization of ReRAM devices an exceeding challenge. Here, we employ nanostructured electrode (nanotip arrays, extremely uniform) formed spontaneously via a self-organized process to improve the ZnO ReRAM switching characteristics.

  7. Lidar Electro-Optic Beam Switch with a Liquid Crystal Variable Retarder

    Science.gov (United States)

    Baer, James

    2012-01-01

    A document discusses a liquid crystal variable retarder, an electro-optic element that changes the polarization of an optical beam in response to a low-voltage electronic signal. This device can be fabricated so that the element creates, among other states, a half-wave of retardance that can be reduced to a very small retardance. When aligned to a polarized source, this can act to rotate the polarization by 90 in one state, but generate no rotation in the other state. If the beam is then incident on a polarization beam splitter, it will efficiently switch from one path to the other when the voltage is applied. The laser beam switching system has no moving parts, improving reliability over mechanical switching. It is low cost, tolerant of high laser power density, and needs only simple drive electronics, minimizing the required system resources.

  8. Optical Microresonators Theory, Fabrication, and Applications

    CERN Document Server

    Heebner, John; Ibrahim, Tarek

    2008-01-01

    This book explains why microresonators came to be important components in the photonic toolbox. While functionally similar to the Fabry-Perot, microring resonators offer a planar nature which is naturally compatible with monolithic microfabrication technologies. In these chapters lie the principles required to characterize, design, construct, and implement microresonators as lasers, amplifiers, sensors, filters, demultiplexers, switches, routers, and logic gates. Additionally, much like quantum dots and photonic crystals, it will be shown how microresonators offer an alternative method for creating engineerable materials with designer linear and nonlinear responses tailored for advanced functionalities operating at ultrafast speeds and compact scales. This is the first detailed text on the theory, fabrication, and applications of optical microresonators, and will be found useful by both graduate students and researchers. With an emphasis on building intuition with distilled equations and graphical illustratio...

  9. Methodological comparison on OLED and OLET fabrication

    Science.gov (United States)

    Suppiah, Sarveshvaran; Hambali, Nor Azura Malini Ahmad; Wahid, Mohamad Halim Abd; Retnasamy, Vithyacharan; Shahimin, Mukhzeer Mohamad

    2018-02-01

    The potential of organic semiconductor devices for light generation is demonstrated by the commercialization of display technologies based on organic light emitting diode (OLED). In OLED, organic materials play the role of light emission once the current is passed through. However, OLED do have major drawbacks whereby it suffers from photon loss and exciton quenching. Organic light emitting transistor (OLET) emerged as the new technology to compensate the efficiency and brightness loss encountered in OLED. The structure has combinational capability to switch the electronic signal such as the field effect transistor (FET) as well as light generation. The aim of this study is to methodologically compare and contrast fabrication process and evaluate feasibility of both organic light emitting diode (OLED) and organic light emitting transistor (OLET). The proposed light emitting layer in this study is poly [2-methoxy-5- (2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV).

  10. Switching model photovoltaic pumping system

    Science.gov (United States)

    Anis, Wagdy R.; Abdul-Sadek Nour, M.

    Photovoltaic (PV) pumping systems are widely used due to their simplicity, high reliability and low cost. A directly-coupled PV pumping system is the most reliable and least-cost PV system. The d.c. motor-pump group is not, however, working at its optimum operating point. A battery buffered PV pumping system introduces a battery between the PV array and the d.c. motor-pump group to ensure that the motor-pump group is operating at its optimum point. The size of the battery storage depends on system economics. If the battery is fully charged while solar radiation is available, the battery will discharge through the load while the PV array is disconnected. Hence, a power loss takes place. To overcome the above mentioned difficulty, a switched mode PV pumping is proposed. When solar radiation is available and the battery is fully charged, the battery is disconnected and the d.c. motor-pump group is directly coupled to the PV array. To avoid excessive operating voltage for the motor, a part of the PV array is switched off to reduce the voltage. As a result, the energy loss is significantly eliminated. Detailed analysis of the proposed system shows that the discharged water increases by about 10% when compared with a conventional battery-buffered system. The system transient performance just after the switching moment shows that the system returns to a steady state in short period. The variations in the system parameters lie within 1% of the rated values.

  11. Radiation-sensitive switching circuits

    Energy Technology Data Exchange (ETDEWEB)

    Moore, J.H.; Cockshott, C.P.

    1976-03-16

    A radiation-sensitive switching circuit has a light emitting diode which supplies light to a photo-transistor, the light being interrupted from time to time. When the photo-transistor is illuminated, current builds up and when this current reaches a predetermined value, a trigger circuit changes state. The peak output of the photo-transistor is measured and the trigger circuit is arranged to change state when the output of the device is a set proportion of the peak output, so as to allow for aging of the components. The circuit is designed to control the ignition system in an automobile engine.

  12. Radiation-sensitive switching circuits

    Energy Technology Data Exchange (ETDEWEB)

    Moore, J.H.; Cockshott, C.P.

    1976-03-16

    A radiation-sensitive switching circuit includes a light emitting diode which from time to time illuminates a photo-transistor, the photo-transistor serving when its output reaches a predetermined value to operate a trigger circuit. In order to allow for aging of the components, the current flow through the diode is increased when the output from the transistor falls below a known level. Conveniently, this is achieved by having a transistor in parallel with the diode, and turning the transistor off when the output from the phototransistor becomes too low. The circuit is designed to control the ignition system in an automobile engine.

  13. Laser-triggered vacuum switch

    Science.gov (United States)

    Brannon, Paul J.; Cowgill, Donald F.

    1990-01-01

    A laser-triggered vacuum switch has a material such as a alkali metal halide on the cathode electrode for thermally activated field emission of electrons and ions upon interaction with a laser beam, the material being in contact with the cathode with a surface facing the discharge gap. The material is preferably a mixture of KCl and Ti powders. The laser may either shine directly on the material, preferably through a hole in the anode, or be directed to the material over a fiber optic cable.

  14. Understanding core conductor fabrics

    International Nuclear Information System (INIS)

    Swenson, D E

    2011-01-01

    ESD Association standard test method ANSI/ESD STM2.1 - Garments (STM2.1), provides electrical resistance test procedures that are applicable for materials and garments that have surface conductive or surface dissipative properties. As has been reported in other papers over the past several years 1 fabrics are now used in many industries for electrostatic control purposes that do not have surface conductive properties and therefore cannot be evaluated using the procedures in STM2.1 2 . A study was conducted to compare surface conductive fabrics with samples of core conductor fibre based fabrics in order to determine differences and similarities with regards to various electrostatic properties. This work will be used to establish a new work item proposal within WG-2, Garments, in the ESD Association Standards Committee in the USA.

  15. A switched capacitor array based system for high-speed calorimetry

    International Nuclear Information System (INIS)

    Levi, M.; Bebek, C.; Ely, R.; Jared, R.; Kipnis, I.; Kirsten, F.; Kleinfelder, S.; Merrick, T.; Milgrome, O.

    1991-12-01

    A sixteen channel analog transient recorder with 256 cells per channel has been fabricated as an integrated circuit. The circuit uses switched capacitor array technology to achieve simultaneous read/write capability and twelve bit dynamic range. Combined with highly parallel analog-to-digital converter and readout control circuitry being developed this system should satisfy the demanding electronics requirements for calorimeter detectors at the SSC. The system design and test results are presented

  16. A robust smart window: reversibly switching from high transparency to angle-independent structural color display.

    Science.gov (United States)

    Ge, Dengteng; Lee, Elaine; Yang, Lili; Cho, Yigil; Li, Min; Gianola, Daniel S; Yang, Shu

    2015-04-17

    A smart window is fabricated from a composite consisting of elastomeric poly(dimethylsiloxane) embedded with a thin layer of quasi-amorphous silica nanoparticles. The smart window can be switched from the initial highly transparent state to opaqueness and displays angle-independent structural color via mechanical stretching. The switchable optical property can be fully recovered after 1000 stretching/releasing cycles. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. On formalism and stability of switched systems

    DEFF Research Database (Denmark)

    Leth, John-Josef; Wisniewski, Rafal

    2012-01-01

    In this paper, we formulate a uniform mathematical framework for studying switched systems with piecewise linear partitioned state space and state dependent switching. Based on known results from the theory of differential inclusions, we devise a Lyapunov stability theorem suitable for this class...... of switched systems. With this, we prove a Lyapunov stability theorem for piecewise linear switched systems by means of a concrete class of Lyapunov functions. Contrary to existing results on the subject, the stability theorems in this paper include Filippov (or relaxed) solutions and allow infinite switching...... in finite time. Finally, we show that for a class of piecewise linear switched systems, the inertia of the system is not sufficient to determine its stability. A number of examples are provided to illustrate the concepts discussed in this paper....

  18. Switching control of an R/C hovercraft: stabilization and smooth switching.

    Science.gov (United States)

    Tanaka, K; Iwasaki, M; Wang, H O

    2001-01-01

    This paper presents stable switching control of an radio-controlled (R/C) hovercraft that is a nonholonomic (nonlinear) system. To exactly represent its nonlinear dynamics, more importantly, to maintain controllability of the system, we newly propose a switching fuzzy model that has locally Takagi-Sugeno (T-S) fuzzy models and switches them according to states, external variables, and/or time. A switching fuzzy controller is constructed by mirroring the rule structure of the switching fuzzy model of an R/C hovercraft. We derive linear matrix inequality (LMI) conditions for ensuring the stability of the closed-loop system consisting of a switching fuzzy model and controller. Furthermore, to guarantee smooth switching of control input at switching boundaries, we also derive a smooth switching condition represented in terms of LMIs. A stable switching fuzzy controller satisfying the smooth switching condition is designed by simultaneously solving both of the LMIs. The simulation and experimental results for the trajectory control of an R/C hovercraft show the validity of the switching fuzzy model and controller design, particularly, the smooth switching condition.

  19. MOX Fabrication Isolation Considerations

    Energy Technology Data Exchange (ETDEWEB)

    Eric L. Shaber; Bradley J Schrader

    2005-08-01

    This document provides a technical position on the preferred level of isolation to fabricate demonstration quantities of mixed oxide transmutation fuels. The Advanced Fuel Cycle Initiative should design and construct automated glovebox fabrication lines for this purpose. This level of isolation adequately protects the health and safety of workers and the general public for all mixed oxide (and other transmutation fuel) manufacturing efforts while retaining flexibility, allowing parallel development and setup, and minimizing capital expense. The basis regulations, issues, and advantages/disadvantages of five potential forms of isolation are summarized here as justification for selection of the preferred technical position.

  20. AN ANALYTICAL STUDY OF SWITCHING TRACTION MOTORS

    Directory of Open Access Journals (Sweden)

    V. M. Bezruchenko

    2010-03-01

    Full Text Available The analytical study of switching of the tractive engines of electric locomotives is conducted. It is found that the obtained curves of change of current of the sections commuted correspond to the theory of average rectilinear switching. By means of the proposed method it is possible on the stage of design of tractive engines to forecast the quality of switching and to correct it timely.

  1. Switching X-Ray Tubes Remotely

    Science.gov (United States)

    Bulthuis, Ronald V.

    1990-01-01

    Convenient switch and relay circuit reduces risk of accidents. Proposed switching circuit for x-ray inspection system enables operator to change electrical connections to x-ray tubes remotely. Operator simply flips switch on conveniently-located selector box to change x-ray heads. Indicator lights on selector box show whether 160 or 320-kV head connected. Relays in changeover box provides proper voltages and coolants. Chance of making wrong connections and damaging equipment eliminated.

  2. Switched reluctance drives for electric vehicle applications

    OpenAIRE

    Andrada Gascón, Pedro; Torrent Burgués, Marcel; Blanqué Molina, Balduino; Perat Benavides, Josep Ignasi

    2003-01-01

    Electric vehicles are the only alternative for a clean, efficient and environmentally friendly urban transport system. With the increasing interest in electric drives for electric vehicle propulsion. This paper first tries to explain why the switched reluctance drive is a strong candidate for electric vehicle applications. It then gives switched reluctance drive design guidelines for battery or fuel cell operated electric vehicles. Finally, it presents the design and simulation of a switched ...

  3. Optical Multidimensional Switching for Data Center Networks

    DEFF Research Database (Denmark)

    Kamchevska, Valerija

    2017-01-01

    , the limitations of previously proposed optical subwavelength switching technologies are discussed and a novel concept of optical time division multiplexed switching is proposed. A detailed elaboration of the envisioned scheme is given, with a special focus on the problem of synchronization. A novel...... synchronization algorithm for the Hi-Ring architecture is proposed and experimentally validated. Furthermore, software controlled switching in the data plane is experimentally demonstrated when the proposed algorithm is used for synchronization. Finally, integration is discussed from two different perspectives...

  4. Monitoring Mellanox Infiniband SX6036 switches

    CERN Document Server

    Agapiou, Marinos

    2017-01-01

    The SX6036 switches addressed by my project, are part of a fully non-blocking fat-tree cluster consisting of 72 servers and 6 Mellanox SX6036 Infiniband switches. My project is about retrieving the appropriate metrics from the Infiniband switch cluster, ingesting the data to Collectd and after my data are being transfered to CERN Database, they are being visualized via Grafana Dashboards.

  5. Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits

    International Nuclear Information System (INIS)

    Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, Tamotsu

    2006-01-01

    A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates (WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and steep single electron pass switching by applying only an input voltage signal, which was completely different from switching properties in the previous SE BDD node devices composed of two single electron switches. As the possible switching mechanism, the correlation between the probabilities of tunnelling thorough a single quantum dot in exit branches was discussed

  6. Atomic crystals resistive switching memory

    International Nuclear Information System (INIS)

    Liu Chunsen; Zhang David Wei; Zhou Peng

    2017-01-01

    Facing the growing data storage and computing demands, a high accessing speed memory with low power and non-volatile character is urgently needed. Resistive access random memory with 4F 2 cell size, switching in sub-nanosecond, cycling endurances of over 10 12 cycles, and information retention exceeding 10 years, is considered as promising next-generation non-volatile memory. However, the energy per bit is still too high to compete against static random access memory and dynamic random access memory. The sneak leakage path and metal film sheet resistance issues hinder the further scaling down. The variation of resistance between different devices and even various cycles in the same device, hold resistive access random memory back from commercialization. The emerging of atomic crystals, possessing fine interface without dangling bonds in low dimension, can provide atomic level solutions for the obsessional issues. Moreover, the unique properties of atomic crystals also enable new type resistive switching memories, which provide a brand-new direction for the resistive access random memory. (topical reviews)

  7. Atomic battery with beam switching

    International Nuclear Information System (INIS)

    Edling, E.A.; McKenna, R.P.; Peterick, E.Th. Jr.; Trexler, F.D.

    1984-01-01

    An electric power generating apparatus that is powered primarily by the emission of electrically charged particles from radio-active materials enclosed in an evacuated vessel of glass or the like. An arrangement of reflecting electrodes causes a beam of particles to switch back and forth at a high frequency between two collecting electrodes that are connected to a resonating tuned primary circuit consisting of an inductor with resonating capacitor. The reflecting electrodes are energized in the proper phase relationship to the collecting electrodes to insure sustained oscillation by means of a secondary winding coupled inductively to the primary winding and connected to the reflecting electrodes. Power may be drawn from the circuit at a stepped down voltage from a power take-off winding that is coupled to the primary winding. The disclosure also describes a collecting electrode arrangement consisting of multiple spatially separated electrodes which together serve to capture a maximum of the available particle energy. A self-starting arrangement for start of oscillations is described. A specially adapted version of the invention utilizes two complementary beams of oppositely charged particles which are switched alternatingly between the collecting electrodes

  8. High conversion ratio DC-DC converter with isolated transformer and switched-clamp capacitor for Taiwan photon source

    Science.gov (United States)

    Wong, Y.-S.; Chen, J.-F.; Liu, K.-B.; Hsieh, Y.-P.

    2017-12-01

    A new high step-up voltage converter that combines a switch capacitor and isolated transformer, together with a passive clamp circuit, is employed to reduce voltage stress on the main power switch. The voltage stress of the power switch should be clamped to 1/4 Vo, and the proposed converter can achieve high step-up voltage gain with appropriate duty ratio. The energy of the leakage inductor can be recycled by the clamp capacitor because of the passive clamp circuit, and low On-state resistance RDS(on) of the power switch can be adopted to reduce the conduction loss. In this paper, several mathematical derivations are presented, CCM and DCM operating principle are discussed, and experimental results are provided to verify the effectiveness of converter topology. Finally, a 24-V-input voltage to 200-V-output voltage and a 150 W output power prototype converter are fabricated in the laboratory.

  9. Stochastic multistep polarization switching in ferroelectrics

    Science.gov (United States)

    Genenko, Y. A.; Khachaturyan, R.; Schultheiß, J.; Ossipov, A.; Daniels, J. E.; Koruza, J.

    2018-04-01

    Consecutive stochastic 90° polarization switching events, clearly resolved in recent experiments, are described by a nucleation and growth multistep model. It extends the classical Kolmogorov-Avrami-Ishibashi approach and includes possible consecutive 90°- and parallel 180° switching events. The model predicts the results of simultaneous time-resolved macroscopic measurements of polarization and strain, performed on a tetragonal Pb (Zr ,Ti ) O3 ceramic in a wide range of electric fields over a time domain of seven orders of magnitude. It allows the determination of the fractions of individual switching processes, their characteristic switching times, activation fields, and respective Avrami indices.

  10. The increased importance of sector switching

    DEFF Research Database (Denmark)

    Frederiksen, Anders; Hansen, Jesper Rosenberg

    2017-01-01

    Sector switching is an important phenomenon that casts light on public–private differences. Yet our knowledge about its prevalence and trends is limited. We study sector switching using unique Danish register-based employer–employee data covering more than 25 years. We find that sector switching...... constitutes 18.5% of all job-to-job mobility, and the trend is increasing both from public to private and from private to public. Sector switching is also generally increasing for middle managers, but for administrative professionals only the flows from private to public increase and for top managers only...

  11. Low-Voltage Switched-Capacitor Circuits

    DEFF Research Database (Denmark)

    Bidari, E.; Keskin, M.; Maloberti, F.

    1999-01-01

    Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications.......Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

  12. Heat switch technology for cryogenic thermal management

    Science.gov (United States)

    Shu, Q. S.; Demko, J. A.; E Fesmire, J.

    2017-12-01

    Systematic review is given of development of novel heat switches at cryogenic temperatures that alternatively provide high thermal connection or ideal thermal isolation to the cold mass. These cryogenic heat switches are widely applied in a variety of unique superconducting systems and critical space applications. The following types of heat switch devices are discussed: 1) magnetic levitation suspension, 2) shape memory alloys, 3) differential thermal expansion, 4) helium or hydrogen gap-gap, 5) superconducting, 6) piezoelectric, 7) cryogenic diode, 8) magneto-resistive, and 9) mechanical demountable connections. Advantages and limitations of different cryogenic heat switches are examined along with the outlook for future thermal management solutions in materials and cryogenic designs.

  13. Mechanism of single atom switch on silicon

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Stokbro, Kurt; Thirstrup, C.

    1998-01-01

    We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias...... and a preferred direction of switching as function of STM tip position. Based on first principles calculations, are show that this behaviour is due to a novel mechanism involving an electronic excitation of a localized surface resonance. (C) 1998 Elsevier Science B.V. All rights reserved....

  14. Clocking Scheme for Switched-Capacitor Circuits

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper

    1998-01-01

    A novel clocking scheme for switched-capacitor (SC) circuits is presented. It can enhance the understanding of SC circuits and the errors caused by MOSFET (MOS) switches. Charge errors, and techniques to make SC circuits less sensitive to them are discussed.......A novel clocking scheme for switched-capacitor (SC) circuits is presented. It can enhance the understanding of SC circuits and the errors caused by MOSFET (MOS) switches. Charge errors, and techniques to make SC circuits less sensitive to them are discussed....

  15. Pigmi mechanical fabrication

    International Nuclear Information System (INIS)

    Hart, V.E.

    1976-01-01

    A prime goal of the mechanical design effort associated with the PIGMI (Pion Generator for Medical Irradiations) program is to investigate new materials and fabrication techniques in an effort to obtain increased machine efficiency and reliability at a reasonable cost. A discussion is given dealing with the modeling program that LASL is pursuing for 450-MHz and 1350-MHz PIGMI development

  16. PIGMI mechanical fabrication

    International Nuclear Information System (INIS)

    Hart, V.E.

    1976-01-01

    A prime goal of the mechanical design effort associated with the PIGMI (Pion Generator for Medical Irradiations) program is to investigate new materials and fabrication techniques in an effort to obtain increased machine efficiency and reliability at a reasonable cost. The following discussion deals with the modeling program that LASL is pursuing for 450-MHz and 1350-MHz PIGMI development. (author)

  17. Fabrication activity for nanophotonics

    DEFF Research Database (Denmark)

    Malureanu, Radu; Chung, Il-Sug; Carletti, Luca

    We present the fabrication and characterization of new structures and materials to be used in nanophotonics. The first structure presented is a fractal metallic metasurface designed to be used as a high-sensitivity sensor for 810nm wavelength. A second structure is a high index contrast grating...

  18. A study on the resistance switching of Ag2Se and Ta2O5 heterojunctions using structural engineering

    Science.gov (United States)

    Lee, Tae Sung; Lee, Nam Joo; Abbas, Haider; Hu, Quanli; Yoon, Tae-Sik; Lee, Hyun Ho; Le Shim, Ee; Kang, Chi Jung

    2018-01-01

    The resistive random access memory (RRAM) devices with heterostuctures have been investigated due to cycling stability, nonlinear switching, complementary resistive switching and self-compliance. The heterostructured devices can modulate the resistive switching (RS) behavior appropriately by bilayer structure with a variety of materials. In this study, the bipolar resistive switching characteristics of the bilayer structures composed of Ta2O5 and Ag2Se, which are transition-metal oxide (TMO) and silver chalcogenide, were investigated. The bilayer devices of Ta2O5 deposited on Ag2Se (Ta2O5/Ag2Se) and Ag2Se deposited on Ta2O5 (Ag2Se/Ta2O5) were fabricated for investigation of the RS characteristics by stacking sequence of Ta2O5 and Ag2Se. All operating voltages were applied to the Ag top electrode with the Pt bottom electrode grounded. The Ta2O5/Ag2Se device showed that a negative voltage sweep switched the device from high resistance state (HRS) to low resistance state (LRS) and a positive voltage sweep switched the device from LRS to HRS. On the contrary, for the Ag2Se/Ta2O5 device a positive voltage sweep switched the device from HRS to LRS, and a negative voltage sweep switched it from LRS to HRS. The polarity dependence of RS was attributed to the stacking sequence of Ta2O5 and Ag2Se. In addition, the combined heterostructured device of both bilayer stacks, Ta2O5/Ag2Se and Ag2Se/Ta2O5, exhibited the complementary switching characteristics. By using threshold switching devices, sneak path leakage can be reduced without additional selectors. The bilayer heterostructures of Ta2O5 and Ag2Se have various advantages such as self-compliance, reproducibility and forming-free stable RS. It confirms the possible applications of TMO and silver chalcogenide heterostructures in RRAM.

  19. 49 CFR 236.6 - Hand-operated switch equipped with switch circuit controller.

    Science.gov (United States)

    2010-10-01

    ... controller. 236.6 Section 236.6 Transportation Other Regulations Relating to Transportation (Continued... switch circuit controller. Hand-operated switch equipped with switch circuit controller connected to the point, or with facing-point lock and circuit controller, shall be so maintained that when point is open...

  20. Strain controlled switching effects in phosphorene and GeS

    Science.gov (United States)

    Li, B. W.; Wang, Y.; Xie, Y. Q.; Zhu, L.; Yao, K. L.

    2017-10-01

    By performing first principles calculations within the combined approach of density functional theory and nonequilibrium Green’s function technique, we have designed some nanoelectronic devices to explore the ferroelastic switching of phosphorene and phosphorene analogs GeS. With the structure swapping along the zigzag direction and armchair direction, band gap transformed at different states due to their anisotropic phosphorene-like structure. From the initial state to the middle state, the band gap becomes progressively smaller, after that, it becomes wide. By analyzing transmission coefficients, it is found that the transport properties of phosphorene and GeS can be controlled by a uniaxial strain. The results also manifest that GeS has great potential to fabricate ferroic nonvolatile memory devices, because its relatively high on/off transmission coefficient ratio (∼1000) between the two stable ferroelastic states.

  1. Simulation and optimization of a polymer directional coupler electro-optic switch with push pull electrodes

    Science.gov (United States)

    Zheng, Chuan-Tao; Ma, Chun-Sheng; Yan, Xin; Wang, Xian-Yin; Zhang, Da-Ming

    2008-07-01

    Structural model and design technique are proposed for a polymer directional coupler electro-optic switch with rib waveguides and push-pull electrodes, of which the electric field distribution is analyzed by the conformal transforming method and image method. In order to get the minimum mode loss and the minimum switching voltage, the parameters of the waveguide and electrode are optimized, such as the core with, core thickness, buffer layer between the core and the electrode, coupling gap between the waveguides, electrode thickness, electrode width and electrode gap. Switching Characteristics are analyzed, which include the output power, insertion loss, and crosstalk. To realize normal switching function, the fabrication error, spectrum shift, and coupling loss between a single mode fiber (SMF) and the waveguide are discussed. Simulation results show that the coupling length is 3082 μm, push-pull switching voltage is 2.14 V, insertion loss is less than 1.17 dB, and crosstalk is less than -30 dB for the designed device.

  2. Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

    Science.gov (United States)

    Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

    2018-01-01

    Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

  3. Enhanced Endurance Organolead Halide Perovskite Resistive Switching Memories Operable under an Extremely Low Bending Radius.

    Science.gov (United States)

    Choi, Jaeho; Le, Quyet Van; Hong, Kootak; Moon, Cheon Woo; Han, Ji Su; Kwon, Ki Chang; Cha, Pil-Ryung; Kwon, Yongwoo; Kim, Soo Young; Jang, Ho Won

    2017-09-13

    It was demonstrated that organolead halide perovskites (OHPs) show a resistive switching behavior with an ultralow electric field of a few kilovolts per centimeter. However, a slow switching time and relatively short endurance remain major obstacles for the realization of the next-generation memory. Here, we report a performance-enhanced OHP resistive switching device. To fabricate topologically and electronically improved OHP thin films, we added hydroiodic acid solution (for an additive) in the precursor solution of the OHP. With drastically improved morphology such as small grain size, low peak-to-valley depth, and precise thickness, the OHP thin films showed an excellent performance as insulating layers in Ag/CH 3 NH 3 PbI 3 /Pt cells, with an endurance of over 10 3 cycles, a high on/off ratio of 10 6 , and an operation speed of 640 μs and without electroforming. We suggest plausible resistive switching and conduction mechanisms with current-voltage characteristics measured at various temperatures and with different top electrodes and device structures. Beyond the extended endurance, highly flexible resistive switching devices with a minimum bending radius of 5 mm create opportunities for use in flexible and wearable electronic devices.

  4. Resistive switching properties and physical mechanism of europium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Wei; Zou, Changwei [School of Physical Science and Technology, Lingnan Normal University, Zhanjiang (China); Bao, Dinghua [State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou (China)

    2017-09-15

    A forming-free resistive switching effect was obtained in Pt/Eu{sub 2}O{sub 3}/Pt devices in which the Eu{sub 2}O{sub 3} thin films were fabricated by a chemical solution deposition method. The devices show unipolar resistive switching with excellent switching parameters, such as high resistance ratio (10{sup 7}), stable resistance values (read at 0.2 V), low reset voltage, good endurance, and long retention time (up to 10{sup 4} s). On the basis of the analysis of the current-voltage (I-V) curves and the resistance-temperature dependence, it can be concluded that the dominant conducting mechanisms were ohmic behavior and Schottky emission at low resistance state and high resistance state, respectively. The resistive switching behavior could be explained by the formation and rupture of conductive filament, which is related to the abundant oxygen vacancies generated in the deposition process. This work demonstrates the great potential opportunities of Eu{sub 2}O{sub 3} thin film in resistive switching memory applications, which might possess distinguished properties. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Status report, canister fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Andersson, Claes-Goeran; Eriksson, Peter; Westman, Marika [Swedish Nuclear Fuel and Waste Management Co., Stockholm (Sweden); Emilsson, Goeran [CSM Materialteknik AB, Linkoeping (Sweden)

    2004-06-01

    The report gives an account of the development of material and fabrication technology for copper canisters with cast inserts during the period from 2000 until the start of 2004. The engineering design of the canister and the choice of materials in the constituent components described in previous status reports have not been significantly changed. In the reference canister, the thickness of the copper shell is 50 mm. Fabrication of individual components with a thinner copper thickness is done for the purpose of gaining experience and evaluating fabrication and inspection methods for such canisters. As a part of the development of cast inserts, computer simulations of the casting processes and techniques used at the foundries have been performed for the purpose of optimizing the material properties. These properties have been evaluated by extensive tensile testing and metallographic inspection of test material taken from discs cut at different points along the length of the inserts. The testing results exhibit a relatively large spread. Low elongation values in certain tensile test specimens are due to the presence of poorly formed graphite, porosities, slag or other casting defects. It is concluded in the report that it will not be possible to avoid some presence of observed defects in castings of this size. In the deep repository, the inserts will be exposed to compressive loading and the observed defects are not critical for strength. An analysis of the strength of the inserts and formulation of relevant material requirements must be based on a statistical approach with probabilistic calculations. This work has been initiated and will be concluded during 2004. An initial verifying compression test of a canister in an isostatic press has indicated considerable overstrength in the structure. Seamless copper tubes are fabricated by means of three methods: extrusion, pierce and draw processing, and forging. It can be concluded that extrusion tests have revealed a

  6. Electro-optical switching of liquid crystals of graphene oxide

    Science.gov (United States)

    Song, Jang-Kun

    Electric field effects on aqueous graphene-oxide (GO) dispersions are reviewed in this chapter. In isotropic and biphasic regimes of GO dispersions, in which the inter-particle friction is low, GO particles sensitively respond to the application of electric field, producing field-induced optical birefringence. The electro-optical sensitivity dramatically decreases as the phase transits to the nematic phase; the increasing inter-particle friction hinders the rotational switching of GO particles. The corresponding Kerr coefficient reaches the maximum near the isotropic to biphasic transition concentration, at which the Kerr coefficient is found be c.a. 1:8 · 10-5 mV-2, the highest value ever reported in all Kerr materials. The exceptionally large Kerr effect arises from the Maxwell- Wagner polarization of GO particles with an extremely large aspect ratio and a thick electrical double layer (EDL). The polarization sensitively depends on the ratio of surface and bulk conductivities in dispersions. As a result, low ion concentration in bulk solvent is highly required to achieve a quality electro-optical switching in GO dispersions. Spontaneous vinylogous carboxylic reaction in GO particles produces H+ ions, resulting in spontaneous degradation of electro-optical response with time, hence the removal of residual ions by using a centrifuge cleaning process significantly improves the electro-optical sensitivity. GO particle size is another important parameter for the Kerr coefficient and the response time. The best performance is observed in a GO dispersion with c.a. 0.5 μm mean size. Dielectrophoretic migration of GO particles can be also used to manipulate GO particles in solution. Using these unique features of GO dispersions, one can fabricate GO liquid crystal devices similar to conventional liquid crystal displays; the large Kerr effect allows fabricating a low power device working at extremely low electric fields.

  7. Unity power factor switching regulator

    Science.gov (United States)

    Rippel, Wally E. (Inventor)

    1983-01-01

    A single or multiphase boost chopper regulator operating with unity power factor, for use such as to charge a battery is comprised of a power section for converting single or multiphase line energy into recharge energy including a rectifier (10), one inductor (L.sub.1) and one chopper (Q.sub.1) for each chopper phase for presenting a load (battery) with a current output, and duty cycle control means (16) for each chopper to control the average inductor current over each period of the chopper, and a sensing and control section including means (20) for sensing at least one load parameter, means (22) for producing a current command signal as a function of said parameter, means (26) for producing a feedback signal as a function of said current command signal and the average rectifier voltage output over each period of the chopper, means (28) for sensing current through said inductor, means (18) for comparing said feedback signal with said sensed current to produce, in response to a difference, a control signal applied to the duty cycle control means, whereby the average inductor current is proportionate to the average rectifier voltage output over each period of the chopper, and instantaneous line current is thereby maintained proportionate to the instantaneous line voltage, thus achieving a unity power factor. The boost chopper is comprised of a plurality of converters connected in parallel and operated in staggered phase. For optimal harmonic suppression, the duty cycles of the switching converters are evenly spaced, and by negative coupling between pairs 180.degree. out-of-phase, peak currents through the switches can be reduced while reducing the inductor size and mass.

  8. Modelling switching power converters as complementarity systems

    NARCIS (Netherlands)

    Camlibel, Mehmet; Iannelli, Luigi; Vasca, Francesco

    2004-01-01

    Switched complementarity models of linear circuits with ideal diodes and/or ideal switches allow one to study well-posedness and stability issues for these circuits by employing the complementarity problems of the mathematical programming. In this paper, we demonstrate that other types of typical

  9. Low-Voltage Switched-Capacitor Circuits

    DEFF Research Database (Denmark)

    Bidari, E.; Keskin, M.; Maloberti, F.

    1999-01-01

    Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

  10. Tutorial: Integrated-photonic switching structures

    Science.gov (United States)

    Soref, Richard

    2018-02-01

    Recent developments in waveguided 2 × 2 and N × M photonic switches are reviewed, including both broadband and narrowband resonant devices for the Si, InP, and AlN platforms. Practical actuation of switches by electro-optical and thermo-optical techniques is discussed. Present datacom-and-computing applications are reviewed, and potential applications are proposed for chip-scale photonic and optoelectronic integrated switching networks. Potential is found in the reconfigurable, programmable "mesh" switches that enable a promising group of applications in new areas beyond those in data centers and cloud servers. Many important matrix switches use gated semiconductor optical amplifiers. The family of broadband, directional-coupler 2 × 2 switches featuring two or three side-coupled waveguides deserves future experimentation, including devices that employ phase-change materials. The newer 2 × 2 resonant switches include standing-wave resonators, different from the micro-ring traveling-wave resonators. The resonant devices comprise nanobeam interferometers, complex-Bragg interferometers, and asymmetric contra-directional couplers. Although the fast, resonant devices offer ultralow switching energy, ˜1 fJ/bit, they have limitations. They require several trade-offs when deployed, but they do have practical application.

  11. Novel RF-MEMS capacitive switching structures

    NARCIS (Netherlands)

    Rottenberg, X.; Jansen, Henricus V.; Fiorini, P.; De Raedt, W.; Tilmans, H.A.C.

    2002-01-01

    This paper reports on novel RF-MEMS capacitive switching devices implementing an electrically floating metal layer covering the dielectric to ensure intimate contact with the bridge in the down state. This results in an optimal switch down capacitance and allows optimisation of the down/up

  12. Ice-release coating for disconnect switches

    Science.gov (United States)

    Mundon, J. L.

    1980-03-01

    Several coatings for ice release, heat dissipation, thermal cycling, and outdoor weathering properties were evaluated. The coating having the most desired performance were applied to full scale switch components. The full scale switches were tested for ice performance and heat dissipation and the results were compared with those on identical switches with uncoated components. The coating chosen for application to switch components was installed on several switches for field evaluation during the winter of 1979 and 1980. It was offered for commercial application for installation to existing switch installations. Results indicate that the coating also exhibits excellent heat dissipation properties and may be used to improve heat dissipation of switch blades and other components. The coating material is unaffected by sunlight; it is a two component, Teflon-filled polyurethane that is available from two sources. The material is currently used for a variety of purposes, such as: aircraft wing and leading edge areas, hydrofoils, conveyor chutes and many others. Light gray in color, it is an excellent heat dissipator and matches the gray insulators used with most switches.

  13. Proceedings of the switched power workshop

    International Nuclear Information System (INIS)

    Fernow, R.C.

    1988-01-01

    These proceedings contain most of the presentations given at a workshop on the current state of research in techniques for switched power acceleration. The proceedings are divided, as was the workshop itself, into two parts. Part 1, contains the latest results from a number of groups active in switched power research. The major topic here is a method for switching externally supplied power onto a transmission line. Advocates for vacuum photodiode switching, solid state switching, gas switching, and synthetic pulse generation are all presented. Other important areas of research described in this section concern: external electrical and laser pulsing systems; the properties of the created electromagnetic pulse; structures used for transporting the electromagnetic pulse to the region where the electron beam is located; and possible applications. Part 2 of the proceedings considers the problem of designing a high brightness electron gun using switched power as the power source. This is an important first step in demonstrating the usefulness of switched power techniques for accelerator physics. In addition such a gun could have immediate practical importance for advanced acceleration studies since the brightness could exceed that of present sources by several orders of magnitude. I would like to take this opportunity to thank Kathleen Tuohy and Patricia Tuttle for their assistance in organizing and running the workshop. Their tireless efforts contribute greatly to a very productive meeting

  14. Photonic crystal Fano lasers and Fano switches

    DEFF Research Database (Denmark)

    Mørk, Jesper; Yu, Yi; Bekele, Dagmawi Alemayehu

    2017-01-01

    We show that Fano resonances can be realized in photonic crystal membrane structures by coupling line-defect waveguides and point-defect nanocavities. The Fano resonance can be exploited to realize optical switches with very small switching energy, as well as Fano lasers, that can generate short...

  15. High-explosive driven crowbar switch

    International Nuclear Information System (INIS)

    Dike, R.S.; Kewish, R.W. Jr.

    1976-01-01

    The disclosure relates to a compact explosive driven switch for use as a low resistance, low inductance crowbar switch. A high-explosive charge extrudes a deformable conductive metallic plate through a polyethylene insulating layer to achieve a hard current contact with a supportive annular conductor

  16. Simulation of linear Switched Reluctance Motor drives

    OpenAIRE

    Garcia Amoros, Jordi; Blanqué Molina, Balduino; Andrada Gascón, Pedro

    2011-01-01

    This paper presents a simulation model of linear switched reluctance motor drives. A Matlab-Simulink environment coupled with finite element analysis is used to perform the simulations. Experimental and simulation results for a double sided linear switched motor drive prototype are reported and compared to verify the simulation model.

  17. Superconducting Complementary Output Switching Logic Operating at 10 - 18 GHz

    Science.gov (United States)

    Jeffery, Mark; van Duzer, T.; Perold, Willem

    1998-03-01

    We have developed a new type of superconducting voltage-state logic called Complementary Output Switching Logic (COSL)(M. Jeffery, W. Perold, and T. Van Duzer, Appl. Phys. Lett., 69) (18), 2746 (1996). The basic COSL gates have been demonstrated at 10 GHz and complex 2-bit encoder circuits have operated at 5 - 8 GHz. The COSL gates have extremely low power dissipation, of order 10 μW/gate, and we have measured bit error rates less than 10-12 at 2 GHz. For these results we used the HYPRES 1 kA/cm^2 critical current density Nb Josephson fabrication process. In the present work we describe our recent test results using the new HYPRES 2.5 kA/cm^2 process. The increased critical current density process significantly improves the switching speed of the COSL devices. We will describe the Monte Carlo method used to optimize the COSL gates for 20 - 30 GHz operation, and the optimal circuit layouts including moats, or ground plane holes, to shield the circuits from trapped magnetic flux. Experimental test results will be presented for the basic COSL devices operating at 10 - 18 GHz. These are the fastest superconducting voltage-state logic devices ever reported, and may have many applications in low power ultra-high-speed digital systems of the future.

  18. Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber

    Science.gov (United States)

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-12-01

    Passive Q-switching of a diode-pumped Nd:GGG laser is demonstrated using Bi-doped GaAs as saturable absorber. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. Compared with the Q-switched laser by undoped GaAs semiconductor saturable absorber, the laser with Bi-doped GaAs as saturable absorber can produce higher output power, shorter pulses, higher single pulse energies and higher peak powers. These results suggest that Bi-doped GaAs can be a promising new candidate of semiconductor saturable absorber in Q-switched laser.

  19. Seismic switch for strong motion measurement

    Science.gov (United States)

    Harben, P.E.; Rodgers, P.W.; Ewert, D.W.

    1995-05-30

    A seismic switching device is described that has an input signal from an existing microseismic station seismometer and a signal from a strong motion measuring instrument. The seismic switch monitors the signal level of the strong motion instrument and passes the seismometer signal to the station data telemetry and recording systems. When the strong motion instrument signal level exceeds a user set threshold level, the seismometer signal is switched out and the strong motion signal is passed to the telemetry system. The amount of time the strong motion signal is passed before switching back to the seismometer signal is user controlled between 1 and 15 seconds. If the threshold level is exceeded during a switch time period, the length of time is extended from that instant by one user set time period. 11 figs.

  20. A Mechanical Switch Using Spectral Microshifts

    Science.gov (United States)

    Mitchell, Gordon L.; Saaski, Elric W.; Hartl, James C.

    1989-02-01

    Among the simplest fiber optic sensors, are those which operate in a binary fashion; they were the first sensor types to be developed. Early experiments with fiber bundles and shutters produced demonstrations of, for example, displacement sensors. Typical applications range from position sensing for aircraft landing gear to counting objects on a production line. Because they frequently replace electrical snap action switches, binary sensors are generally called optical switches. Optical switch applications account for a much larger market than the more complex analog measurements discussed in the balance of this volume. This paper presents an optical switch concept that uses a single fiber and is tolerant of back reflections. The sensor element is a low finesse Fabry-Perot pressure sensor which replaces the electrical contact in a conventional snap action switch.

  1. Switched-capacitor isolated LED driver

    Science.gov (United States)

    Sanders, Seth R.; Kline, Mitchell

    2016-03-22

    A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

  2. The rate limiting process and its activation energy in the forming process of a Cu/Ta2O5/Pt gapless-type atomic switch

    Science.gov (United States)

    Shigeoka, Yuki; Tsuruoka, Tohru; Hasegawa, Tsuyoshi

    2018-03-01

    The rate limiting process in first resistive switching, called the “forming process”, is determined by measuring the switching time of an as-fabricated Cu/Ta2O5/Pt atomic switch as a function of the ambient temperature and the Ta2O5 thickness. The temperature dependence is well fitted by the Arrhenius equation, suggesting that a certain activation process dominates the switching phenomenon. The switching time increases linearly as the Ta2O5 thickness increases. The results herein clearly suggest that the rate limiting process is the drift of Cu cations in the Ta2O5 layer. We determine that the activation energy is 0.4 eV.

  3. True and intentionally fabricated memories

    OpenAIRE

    Justice, L.V.; Morrison, C.M.; Conway, M. A.

    2012-01-01

    The aim of the experiment reported here was to investigate the processes underlying the construction of truthful and deliberately fabricated memories. Properties of memories created to be intentionally false - fabricated memories - were compared to properties of memories believed to be true - true memories. Participants recalled and then wrote or spoke true memories and fabricated memories of everyday events. It was found that true memories were reliably more vivid than fabricated memories an...

  4. Fabrication of Nanochannels

    Directory of Open Access Journals (Sweden)

    Yuqi Zhang

    2015-09-01

    Full Text Available Nature has inspired the fabrication of intelligent devices to meet the needs of the advanced community and better understand the imitation of biology. As a biomimetic nanodevice, nanochannels/nanopores aroused increasing interest because of their potential applications in nanofluidic fields. In this review, we have summarized some recent results mainly focused on the design and fabrication of one-dimensional nanochannels, which can be made of many materials, including polymers, inorganics, biotic materials, and composite materials. These nanochannels have some properties similar to biological channels, such as selectivity, voltage-dependent current fluctuations, ionic rectification current and ionic gating, etc. Therefore, they show great potential for the fields of biosensing, filtration, and energy conversions. These advances can not only help people to understand the living processes in nature, but also inspire scientists to develop novel nanodevices with better performance for mankind.

  5. Automated breeder fuel fabrication

    International Nuclear Information System (INIS)

    Goldmann, L.H.; Frederickson, J.R.

    1983-01-01

    The objective of the Secure Automated Fabrication (SAF) Project is to develop remotely operated equipment for the processing and manufacturing of breeder reactor fuel pins. The SAF line will be installed in the Fuels and Materials Examination Facility (FMEF). The FMEF is presently under construction at the Department of Energy's (DOE) Hanford site near Richland, Washington, and is operated by the Westinghouse Hanford Company (WHC). The fabrication and support systems of the SAF line are designed for computer-controlled operation from a centralized control room. Remote and automated fuel fabriction operations will result in: reduced radiation exposure to workers; enhanced safeguards; improved product quality; near real-time accountability, and increased productivity. The present schedule calls for installation of SAF line equipment in the FMEF beginning in 1984, with qualifying runs starting in 1986 and production commencing in 1987. 5 figures

  6. Intentionally fabricated autobiographical memories

    OpenAIRE

    Justice, LV; Morrison, CM; Conway, MA

    2017-01-01

    Participants generated both autobiographical memories (AMs) that they believed to be true and intentionally fabricated autobiographical memories (IFAMs). Memories were constructed while a concurrent memory load (random 8-digit sequence) was held in mind or while there was no concurrent load. Amount and accuracy of recall of the concurrent memory load was reliably poorer following generation of IFAMs than following generation of AMs. There was no reliable effect of load on memory generation ti...

  7. Fabrication of nuclear fuel

    International Nuclear Information System (INIS)

    Ion, S.E.; Watson, R.H.; Loch, E.P.

    1989-01-01

    Commercial nuclear fuel fabrication is focused on providing quality products. Throughout manufacturing attention is placed on the precise control of processes, procedures and tooling to reduce product variability. This paper describes the processes used to manufacture fuel for the advanced gas cooled reactor, light water reactor, fast breeder reactor and Magnox reactor systems at the BNFL, Springfields, and Westinghouse Columbia, USA, facilities. It covers the chemical purification and conversion stages of fuel production before describing the fabrication of both oxide and metallic fuel and gives a general overview of the technology used. Although the principles of fuel fabrication in terms of providing a cladding designed to be the primary envelope to encase the fuel are similar for each system, there are detailed differences in manufacturing route and cladding type which arise from differing reactor requirements. These, together with developments made in response to customer needs, are reviewed and the need to maintain a high purity reliable product with low variability at all stages in manufacture is emphasized throughout. (author)

  8. Advanced fuel fabrication

    International Nuclear Information System (INIS)

    Bernard, H.

    1989-01-01

    This paper deals with the fabrication of advanced fuels, such as mixed oxides for Pressurized Water Reactors or mixed nitrides for Fast Breeder Reactors. Although an extensive production experience exists for the mixed oxides used in the FBR, important work is still needed to improve the theoretical and technical knowledge of the production route which will be introduced in the future European facility, named Melox, at Marcoule. Recently, the feasibility of nitride fuel fabrication in existing commercial oxide facilities was demonstrated in France. The process, based on carbothermic reduction of oxides with subsequent comminution of the reaction product, cold pressing and sintering provides (U, Pu)N pellets with characteristics suitable for irradiation testing. Two experiments named NIMPHE 1 and 2 fabricated in collaboration with ITU, Karlsruhe, involve 16 nitride and 2 carbide pins, operating at a linear power of 45 and 73 kW/m with a smear density of 75-80% TD and a high burn-up target of 15 at%. These experiments are currently being irradiated in Phenix, at Marcoule. (orig.)

  9. Implications of Sepedi/English code switching for ASR systems

    CSIR Research Space (South Africa)

    Modipa, TI

    2013-12-01

    Full Text Available Code switching (the process of switching from one language to another during a conversation) is a common phenomenon in multilingual environments. Where a minority and dominant language coincide, code switching from the minority language...

  10. Asymmetric Superhydrophobic/Superhydrophilic Cotton Fabrics Designed by Spraying Polymer and Nanoparticles.

    Science.gov (United States)

    Sasaki, Kaichi; Tenjimbayashi, Mizuki; Manabe, Kengo; Shiratori, Seimei

    2016-01-13

    Inspired by the special wettability of certain natural life forms, such as the high water repellency of lotus leaves, many researchers have attempted to impart superhydrophobic properties to fabrics in academic and industrial contexts. Recently, a new switching system of wettability has inspired a strong demand for advanced coatings, even though their fabrication remains complex and costly. Here, cotton fabrics with asymmetric wettability (one face with natural superhydrophilicity and one face with superhydrophobicity) were fabricated by one-step spraying of a mixture of biocompatible commercial materials, hydrophobic SiO2 nanoparticles and ethyl-α-cyanoacrylate superglue. Our approach involves controlling the permeation of the fabric coatings by changing the distance between the fabric and the sprayer, to make one side superhydrophobic and the other side naturally superhydrophilic. As a result, the superhydrophobic side, with its high mechanical durability, exhibited a water contact angle of 154° and sliding angle of 16°, which meets the requirement for self-cleaning ability of surfaces. The opposite side exhibited high water absorption ability owing to the natural superhydrophilic property of the fabric. In addition, the designed cotton fabrics had blood absorption and clotting abilities on the superhydrophilic side, while the superhydrophobic side prevented water and blood permeation without losing the natural breathability of the cotton. These functions may be useful in the design of multifunctional fabrics for medical applications.

  11. Reagentless, Structure-Switching, Electrochemical Aptamer-Based Sensors.

    Science.gov (United States)

    Schoukroun-Barnes, Lauren R; Macazo, Florika C; Gutierrez, Brenda; Lottermoser, Justine; Liu, Juan; White, Ryan J

    2016-06-12

    The development of structure-switching, electrochemical, aptamer-based sensors over the past ∼10 years has led to a variety of reagentless sensors capable of analytical detection in a range of sample matrices. The crux of this methodology is the coupling of target-induced conformation changes of a redox-labeled aptamer with electrochemical detection of the resulting altered charge transfer rate between the redox molecule and electrode surface. Using aptamer recognition expands the highly sensitive detection ability of electrochemistry to a range of previously inaccessible analytes. In this review, we focus on the methods of sensor fabrication and how sensor signaling is affected by fabrication parameters. We then discuss recent studies addressing the fundamentals of sensor signaling as well as quantitative characterization of the analytical performance of electrochemical aptamer-based sensors. Although the limits of detection of reported electrochemical aptamer-based sensors do not often reach that of gold-standard methods such as enzyme-linked immunosorbent assays, the operational convenience of the sensor platform enables exciting analytical applications that we address. Using illustrative examples, we highlight recent advances in the field that impact important areas of analytical chemistry. Finally, we discuss the challenges and prospects for this class of sensors.

  12. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

    International Nuclear Information System (INIS)

    Cui Jie; Chen Lei; Liu Yi; Zhao Peng; Niu Xu

    2014-01-01

    A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than −45 dB isolation and maximum −103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator. (semiconductor integrated circuits)

  13. Bulk chirality effect for symmetric bistable switching of liquid crystals on topologically self-patterned degenerate anchoring surface.

    Science.gov (United States)

    Park, Min-Kyu; Joo, Kyung-Il; Kim, Hak-Rin

    2017-06-26

    We demonstrate a bistable switching liquid crystal (LC) mode utilizing a topologically self-structured dual-groove surface for degenerated easy axes of LC anchoring. In our study, the effect of the bulk elastic distortion of the LC directors on the bistable anchoring surface is theoretically analyzed for balanced bistable states based on a free energy diagram. By adjusting bulk LC chirality, we developed ideally symmetric and stable bistable anchoring and switching properties, which can be driven by a low in-plane pulsed field of about 0.7 V/µm. The fabricated device has a contrast ratio of 196:1.

  14. Design of all Optical Packet Switching Networks

    Directory of Open Access Journals (Sweden)

    Hussein T. Mouftah

    2002-06-01

    Full Text Available Optical switches and wavelength converters are recognized as two of the most important DWDM system components in future all-optical networks. Optical switches perform the key functions of flexible routing, reconfigurable optical cross-connect (OXC, network protection and restoration, etc. in optical networks. Wavelength Converters are used to shift one incoming wavelength to another outgoing wavelength when this needs to be done.  Always residing in optical switches, they can effectively alleviate the blocking probability and help solve contention happening at the output port of switches. The deployment of wavelength converters within optical switches provides robust routing, switching and network management in optical layer, which is critical to the emerging all-optical Internet. However, the high cost of wavelength converters at current stage of manufacturing technology has to be taken into consideration when we design node architectures for an optical network. Our research explores the efficiency of wavelength converters in a long-haul optical network at different degrees of traffic load by running a simulation. Then, we propose a new cost-effective way to optimally design wavelength-convertible switch so as to achieve higher network performance while still keeping the total network cost down. Meanwhile, the routing and wavelength assignment (RWA algorithm used in the research is designed to be a generic one for both large-scale and small-scale traffic. Removing the constraint on the traffic load makes the RWA more adaptive and robust. When this new RWA works in conjunction with a newly introduced concept of wavelength-convertible switches, we shall explore the impact of large-scale traffic on the role of wavelength converter so as to determine the method towards optimal use of wavelength convertible switches for all-optical networks.

  15. Comparison of switching control algorithms effective in restricting the switching in the neighborhood of the origin

    International Nuclear Information System (INIS)

    Joung, JinWook; Chung, Lan; Smyth, Andrew W

    2010-01-01

    The active interaction control (AIC) system consisting of a primary structure, an auxiliary structure and an interaction element was proposed to protect the primary structure against earthquakes and winds. The objective of the AIC system in reducing the responses of the primary structure is fulfilled by activating or deactivating the switching between the engagement and the disengagement of the primary and auxiliary structures through the interaction element. The status of the interaction element is controlled by switching control algorithms. The previously developed switching control algorithms require an excessive amount of switching, which is inefficient. In this paper, the excessive amount of switching is restricted by imposing an appropriately designed switching boundary region, where switching is prohibited, on pre-designed engagement–disengagement conditions. Two different approaches are used in designing the newly proposed AID-off and AID-off 2 algorithms. The AID-off 2 algorithm is designed to affect deactivated switching regions explicitly, unlike the AID-off algorithm, which follows the same procedure of designing the engagement–disengagement conditions of the previously developed algorithms, by using the current status of the AIC system. Both algorithms are shown to be effective in reducing the amount of switching times triggered from the previously developed AID algorithm under an appropriately selected control sampling period for different earthquakes, but the AID-off 2 algorithm outperforms the AID-off algorithm in reducing the number of switching times

  16. Organization of the channel-switching process in parallel computer systems based on a matrix optical switch

    Science.gov (United States)

    Golomidov, Y. V.; Li, S. K.; Popov, S. A.; Smolov, V. B.

    1986-01-01

    After a classification and analysis of electronic and optoelectronic switching devices, the design principles and structure of a matrix optical switch is described. The switching and pair-exclusion operations in this type of switch are examined, and a method for the optical switching of communication channels is elaborated. Finally, attention is given to the structural organization of a parallel computer system with a matrix optical switch.

  17. Fault tolerant control for switched linear systems

    CERN Document Server

    Du, Dongsheng; Shi, Peng

    2015-01-01

    This book presents up-to-date research and novel methodologies on fault diagnosis and fault tolerant control for switched linear systems. It provides a unified yet neat framework of filtering, fault detection, fault diagnosis and fault tolerant control of switched systems. It can therefore serve as a useful textbook for senior and/or graduate students who are interested in knowing the state-of-the-art of filtering, fault detection, fault diagnosis and fault tolerant control areas, as well as recent advances in switched linear systems.  

  18. Consumer poaching, brand switching, and price transparency

    DEFF Research Database (Denmark)

    Schultz, Christian

    2014-01-01

    This paper addresses price transparency on the consumer side in markets with behavioral price discrimination which feature welfare reducing brand switching. When long-term contracts are not available, an increase in transparency intensifies competition, lowers prices and profits, reduces brand...... switching and benefits consumers and welfare. With long-term contracts, an increase in transparency reduces the use of long-term contracts, leading to more brand switching and a welfare loss. Otherwise, the results are the same as without long-term contracts....

  19. Design of a switched reluctance generator

    Energy Technology Data Exchange (ETDEWEB)

    Heese, T.; Pyrhoenen, J.

    1996-12-31

    This report presents the design of a low voltage switched reluctance generator for variable speed applications showing the design of its construction and commutation unit. For the realisation of the control system the control strategy is presented. The principle and the theory of switched reluctance generators are described in this context. Also an overview of existing generator technology for these applications is given. The results gained suggest that switched reluctance machines can also advantageously be used as generators if the generating operation is considered within the design process. Compared with the existing technology a higher output power and efficiency is reached over the whole speed range. (orig.)

  20. Electrically switched cesium ion exchange

    International Nuclear Information System (INIS)

    Lilga, M.A.; Orth, R.J.; Sukamto, J.P.H.; Schwartz, D.T.; Haight, S.M.; Genders, J.D.

    1997-04-01

    Electrically Switched Ion Exchange (ESIX) is a separation technology being developed as an alternative to conventional ion exchange for removing radionuclides from high-level waste. The ESIX technology, which combines ion exchange and electrochemistry, is geared toward producing electroactive films that are highly selective, regenerable, and long lasting. During the process, ion uptake and elution are controlled directly by modulating the potential of an ion exchange film that has been electrochemically deposited onto a high surface area electrode. This method adds little sodium to the waste stream and minimizes the secondary wastes associated with traditional ion exchange techniques. Development of the ESIX process is well underway for cesium removal using ferrocyanides as the electroactive films. Films having selectivity for perrhenate (a pertechnetate surrogate) over nitrate also have been deposited and tested. A case study for the KE Basin on the Hanford Site was conducted based on the results of the development testing. Engineering design baseline parameters for film deposition, film regeneration, cesium loading, and cesium elution were used for developing a conceptual system. Order of magnitude cost estimates were developed to compare with conventional ion exchange. This case study demonstrated that KE Basin wastewater could be processed continuously with minimal secondary waste and reduced associated disposal costs, as well as lower capital and labor expenditures

  1. Switching on the Aire conditioner.

    Science.gov (United States)

    Matsumoto, Mitsuru

    2015-12-01

    Aire has been cloned as the gene responsible for a hereditary type of organ-specific autoimmune disease. Aire controls the expression of a wide array of tissue-restricted Ags by medullary thymic epithelial cells (mTECs), thereby leading to clonal deletion and Treg-cell production, and ultimately to the establishment of self-tolerance. However, relatively little is known about the mechanism responsible for the control of Aire expression itself. In this issue of the European Journal of Immunology, Haljasorg et al. [Eur. J. Immunol. 2015. 45: 3246-3256] have reported the presence of an enhancer element for Aire that binds with NF-κB components downstream of the TNF receptor family member, RANK (receptor activator of NF-κB). The results suggest that RANK has a dual mode of action in Aire expression: one involving the promotion of mTEC differentiation and the other involving activation of the molecular switch for Aire within mature mTECs. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Mask fabrication process

    Science.gov (United States)

    Cardinale, Gregory F.

    2000-01-01

    A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.

  3. Information Switching Processor (ISP) contention analysis and control

    Science.gov (United States)

    Inukai, Thomas

    1995-01-01

    In designing a satellite system with on-board processing, the selection of a switching architecture is often critical. The on-board switching function can be implemented by circuit switching or packet switching. Destination-directed packet switching has several attractive features, such as self-routing without on-board switch reconfiguration, no switch control memory requirement, efficient bandwidth utilization for packet switched traffic, and accommodation of circuit switched traffic. Destination-directed packet switching, however, has two potential concerns: (1) contention and (2) congestion. And this report specifically deals with the first problem. It includes a description and analysis of various self-routing switch structures, the nature of contention problems, and contention and resolution techniques.

  4. Fabrication of Pb (Zr, Ti) O3 Thin Film for Non-Volatile Memory Device Application

    International Nuclear Information System (INIS)

    Mar Lar Win

    2011-12-01

    Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated. The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800 C) could function as a nonvolatile memory.

  5. Robust dynamic output feedback control for switched polytopic systems under asynchronous switching

    Directory of Open Access Journals (Sweden)

    Yang Tingting

    2015-08-01

    Full Text Available The robust controller design problem for switched polytopic systems under asynchronous switching is addressed. These systems exist in many aviation applications, such as dynamical systems involving rapid variations. A switched polytopic system is established to describe the highly maneuverable technology vehicle within the full flight envelope and a robust dynamic output feedback control method is designed for the switched polytopic system. Combining the Lyapunov-like function method and the average dwell time method, a sufficient condition is derived for the switched polytopic system with asynchronous switching and data dropout to be globally, uniformly and asymptotically stable in terms of linear matrix inequality. The robust dynamic output feedback controller is then applied to the highly maneuverable technology vehicle to illustrate the effectiveness of the proposed approach. The simulation results show that the angle of attack tracking performance is acceptable over the time history and the control surface responses are all satisfying along the full flight trajectory.

  6. Instability in time-delayed switched systems induced by fast and random switching

    Science.gov (United States)

    Guo, Yao; Lin, Wei; Chen, Yuming; Wu, Jianhong

    2017-07-01

    In this paper, we consider a switched system comprising finitely or infinitely many subsystems described by linear time-delayed differential equations and a rule that orchestrates the system switching randomly among these subsystems, where the switching times are also randomly chosen. We first construct a counterintuitive example where even though all the time-delayed subsystems are exponentially stable, the behaviors of the randomly switched system change from stable dynamics to unstable dynamics with a decrease of the dwell time. Then by using the theories of stochastic processes and delay differential equations, we present a general result on when this fast and random switching induced instability should occur and we extend this to the case of nonlinear time-delayed switched systems as well.

  7. Construction of large scale switch matrix by interconnecting integrated optical switch chips with EDFAs

    Science.gov (United States)

    Liao, Mingle; Wu, Baojian; Hou, Jianhong; Qiu, Kun

    2018-03-01

    Large scale optical switches are essential components in optical communication network. We aim to build up a large scale optical switch matrix by the interconnection of silicon-based optical switch chips using 3-stage CLOS structure, where EDFAs are needed to compensate for the insertion loss of the chips. The optical signal-to-noise ratio (OSNR) performance of the resulting large scale optical switch matrix is investigated for TE-mode light and the experimental results are in agreement with the theoretical analysis. We build up a 64 ×64 switch matrix by use of 16 ×16 optical switch chips and the OSNR and receiver sensibility can respectively be improved by 0.6 dB and 0.2 dB by optimizing the gain configuration of the EDFAs.

  8. Granular acoustic switches and logic elements

    Science.gov (United States)

    Li, Feng; Anzel, Paul; Yang, Jinkyu; Kevrekidis, Panayotis G.; Daraio, Chiara

    2014-10-01

    Electrical flow control devices are fundamental components in electrical appliances and computers; similarly, optical switches are essential in a number of communication, computation and quantum information-processing applications. An acoustic counterpart would use an acoustic (mechanical) signal to control the mechanical energy flow through a solid material. Although earlier research has demonstrated acoustic diodes or circulators, no acoustic switches with wide operational frequency ranges and controllability have been realized. Here we propose and demonstrate an acoustic switch based on a driven chain of spherical particles with a nonlinear contact force. We experimentally and numerically verify that this switching mechanism stems from a combination of nonlinearity and bandgap effects. We also realize the OR and AND acoustic logic elements by exploiting the nonlinear dynamical effects of the granular chain. We anticipate these results to enable the creation of novel acoustic devices for the control of mechanical energy flow in high-performance ultrasonic devices.

  9. Topological photonic orbital-angular-momentum switch

    Science.gov (United States)

    Luo, Xi-Wang; Zhang, Chuanwei; Guo, Guang-Can; Zhou, Zheng-Wei

    2018-04-01

    The large number of available orbital-angular-momentum (OAM) states of photons provides a unique resource for many important applications in quantum information and optical communications. However, conventional OAM switching devices usually rely on precise parameter control and are limited by slow switching rate and low efficiency. Here we propose a robust, fast, and efficient photonic OAM switch device based on a topological process, where photons are adiabatically pumped to a target OAM state on demand. Such topological OAM pumping can be realized through manipulating photons in a few degenerate main cavities and involves only a limited number of optical elements. A large change of OAM at ˜10q can be realized with only q degenerate main cavities and at most 5 q pumping cycles. The topological photonic OAM switch may become a powerful device for broad applications in many different fields and motivate a topological design of conventional optical devices.

  10. Blood and Books: Performing Code Switching

    Directory of Open Access Journals (Sweden)

    Jeff Friedman

    2008-05-01

    Full Text Available Code switching is a linguistic term that identifies ways individuals use communication modes and registers to negotiate difference in social relations. This essay suggests that arts-based inquiry, in the form of choreography and performance, provides a suitable and efficacious location within which both verbal and nonverbal channels of code switching can be investigated. Blood and Books, a case study of dance choreography within the context of post-colonial Maori performance in Aotearoa/New Zealand, is described and analyzed for its performance of code switching. The essay is framed by a discussion of how arts-based research within tertiary higher education requires careful negotiation in the form of code switching, as performed by the author's reflexive use of vernacular and formal registers in the essay. URN: urn:nbn:de:0114-fqs0802462

  11. Active plasmonics in WDM traffic switching applications

    DEFF Research Database (Denmark)

    Papaioannou, S.; Kalavrouziotis, D.; Vyrsokinos, K.

    2012-01-01

    With metal stripes being intrinsic components of plasmonic waveguides, plasmonics provides a "naturally" energy-efficient platform for merging broadband optical links with intelligent electronic processing, instigating a great promise for low-power and small-footprint active functional circuitry....... The first active Dielectric-Loaded Surface Plasmon Polariton (DLSPP) thermo-optic (TO) switches with successful performance in single-channel 10 Gb/s data traffic environments have led the inroad towards bringing low-power active plasmonics in practical traffic applications. In this article, we introduce...... active plasmonics into Wavelength Division Multiplexed (WDM) switching applications, using the smallest TO DLSPP-based Mach-Zehnder interferometric switch reported so far and showing its successful performance in 4310 Gb/s low-power and fast switching operation. The demonstration of the WDM...

  12. Bistable fluidic valve is electrically switched

    Science.gov (United States)

    Fiet, O.; Salvinski, R. J.

    1970-01-01

    Bistable control valve is selectively switched by direct application of an electrical field to divert fluid from one output channel to another. Valve is inexpensive, has no moving parts, and operates on fluids which are relatively poor electrical conductors.

  13. Multi-planed unified switching topologies

    Science.gov (United States)

    Chen, Dong; Heidelberger, Philip; Sugawara, Yutaka

    2017-07-04

    An apparatus and method for extending the scalability and improving the partitionability of networks that contain all-to-all links for transporting packet traffic from a source endpoint to a destination endpoint with low per-endpoint (per-server) cost and a small number of hops. An all-to-all wiring in the baseline topology is decomposed into smaller all-to-all components in which each smaller all-to-all connection is replaced with star topology by using global switches. Stacking multiple copies of the star topology baseline network creates a multi-planed switching topology for transporting packet traffic. Point-to-point unified stacking method using global switch wiring methods connects multiple planes of a baseline topology by using the global switches to create a large network size with a low number of hops, i.e., low network latency. Grouped unified stacking method increases the scalability (network size) of a stacked topology.

  14. Information, switching costs, and consumer choice:

    DEFF Research Database (Denmark)

    Anell, Anders; Dietrichson, Jens; Maria Ellegård, Lina

    . Such improvements are contingent on consumers having access to comparative information about providers and acting on this information when making their choice. However, in the presence of information frictions and switching costs, consumers may have limited ability to find suitable providers. We use two large......-scale randomized eld experiments in primary health care to examine if the choice of provider is affected when consumers receive comparative information by postal mail and small costs associated with switching are reduced. The first experiment targeted a subset of the general population in the Swedish region Skåne......, and the second targeted new residents in the region, who should have less prior information and lower switching costs. In both cases, the propensity to switch provider increased significantly after the intervention. The effects were larger for new residents than for the general population, and were driven...

  15. Analysis of Switched-Rigid Floating Oscillator

    Directory of Open Access Journals (Sweden)

    Prabhakar R. Marur

    2009-01-01

    Full Text Available In explicit finite element simulations, a technique called deformable-to-rigid (D2R switching is used routinely to reduce the computation time. Using the D2R option, the deformable parts in the model can be switched to rigid and reverted back to deformable when needed during the analysis. The time of activation of D2R however influences the overall dynamics of the system being analyzed. In this paper, a theoretical basis for the selection of time of rigid switching based on system energy is established. A floating oscillator problem is investigated for this purpose and closed-form analytical expressions are derived for different phases in rigid switching. The analytical expressions are validated by comparing the theoretical results with numerical computations.

  16. Modeling switching behaviour of direct selling customers

    Directory of Open Access Journals (Sweden)

    P Msweli-Mbanga

    2004-04-01

    Full Text Available The direct selling industry suffers a high turnover rate of salespeople, resulting in high costs of training new salespeople. Further costs are incurred when broken relationships with customers cause them to switch from one product supplier to another. This study identifies twelve factors that drive the switching behaviour of direct sales customers and examines the extent to which these factors influence switching. Exploratory factor analysis was used to assess the validity of these factors. The factors were represented in a model that posits that an interpersonal relationship between a direct sales person and a customer moderates the relationship between switching behaviour and loyalty. Structural equation modeling was used to test the proposed model. The author then discusses the empirical findings and their managerial implications, providing further avenues for research.

  17. Fabrication of zein nanostructure

    Science.gov (United States)

    Luecha, Jarupat

    The concerns on the increase of polluting plastic wastes as well as the U.S. dependence on imported petrochemical products have driven an attention towards alternative biodegradable polymers from renewable resources. Zein protein, a co-product from ethanol production from corn, is a good candidate. This research project aims to increase zein value by adopting nanotechnology for fabricating advanced zein packaging films and zein microfluidic devices. Two nanotechnology approaches were focused: the polymer nanoclay nanocomposite technique where the nanocomposite structures were created in the zein matrix, and the soft lithography and the microfluidic devices where the micro and nanopatterns were created on the zein film surfaces. The polymer nanoclay nanocomposite technique was adopted in the commonly used zein film fabrication processes which were solvent casting and extrusion blowing methods. The two methods resulted in partially exfoliated nanocomposite structures. The impact of nanoclays on the physical properties of zein films strongly depended on the film preparation techniques. The impact of nanoclay concentration was more pronounced in the films made by extrusion blowing technique than by the solvent casting technique. As the processability limitation for the extrusion blowing technique of the zein sample containing hight nanoclay content, the effect of the nanoclay content on the rheological properties of zein hybrid resins at linear and nonlinear viscoelastic regions were further investigated. A pristine zein resin exhibited soft solid like behavior. On the other hand, the zein hybrid with nanoclay content greater than 5 wt.% showed more liquid like behavior, suggesting that the nanoclays interrupted the entangled zein network. There was good correspondence between the experimental data and the predictions of the Wagner model for the pristine zein resins. However, the model failed to predict the steady shear properties of the zein nanoclay nanocomposite

  18. The Robustness of Stochastic Switching Networks

    OpenAIRE

    Loh, Po-Ling; Zhou, Hongchao; Bruck, Jehoshua

    2009-01-01

    Many natural systems, including chemical and biological systems, can be modeled using stochastic switching circuits. These circuits consist of stochastic switches, called pswitches, which operate with a fixed probability of being open or closed. We study the effect caused by introducing an error of size ∈ to each pswitch in a stochastic circuit. We analyze two constructions – simple series-parallel and general series-parallel circuits – and prove that simple series-parallel circuits are robus...

  19. Automatic Control System Switching Roadway Lighting

    OpenAIRE

    Agus Trimuji Susilo; Lingga Hermanto Drs. MM

    2002-01-01

    Lack of attention to the information officer street lights, cause is not exactly the timewhen the blame lights street lighting street - the street in this city protocol. And whenit was already dark, the lights had not lit, so it can harm the users of the road. Werecommend that when it got bright lights - the lights switched off late, so muchelectricity is wasted with nothing - nothing.Given the problems above, the automatic switching is required that can control all thelights - the existing l...

  20. Optical waveguide switch through magnetic reflectance wall

    Science.gov (United States)

    Fang, Yuntuan; Ni, Zhiyao; Yang, Lixia

    2016-04-01

    We propose a new design to achieve optical waveguide switch. We construct a photonic crystal waveguide with one yttrium iron garnet (YIG) rod array on the two sides of the waveguide. Through the mode analysis, we find in special frequency range a few YIG rods under magnetic field can form the magnetic reflectance wall that blocks the light flow. Removing the magnetic field will delete the reflection wall and let the blocked light to be switched on.

  1. Ring oscillator switching noise under NBTI wearout

    OpenAIRE

    Fernández García, Raúl; Gil Galí, Ignacio; Ruiz, José María; Morata Cariñena, Marta

    2011-01-01

    In this paper the switching noise of a CMOS ring oscillator has been analysed when their pFETs are subjected to negative bias temperature instability (NBTI). The impact of pFET under NBTI has been experimentally quantified whereas CMOS ring oscillator frequency and the switching noise has been analysed by means of electrical full-model simulation. The results show that the impact on the electromagnetic compatibility behaviour increases with NBTI wearout. Peer Reviewed

  2. Portfolio Selection with Jumps under Regime Switching

    Directory of Open Access Journals (Sweden)

    Lin Zhao

    2010-01-01

    Full Text Available We investigate a continuous-time version of the mean-variance portfolio selection model with jumps under regime switching. The portfolio selection is proposed and analyzed for a market consisting of one bank account and multiple stocks. The random regime switching is assumed to be independent of the underlying Brownian motion and jump processes. A Markov chain modulated diffusion formulation is employed to model the problem.

  3. Lasers for switched-power linacs

    International Nuclear Information System (INIS)

    Bigio, I.J.

    1988-01-01

    Laser-switched power surges for particle accelerators, just as with direct laser-driven accelerator schemes, place unique demands on the specifications of the invoked laser systems. We review the laser requirements for switched power sources of the types described in other chapters of this volume. The relative advantages and disadvantages of selected lasers are listed, and the appropriateness and scalability of existing technology is discussed. 4 refs., 2 figs., 2 tabs

  4. New pulse modulator with low switching frequency

    Directory of Open Access Journals (Sweden)

    Golub V. S.

    2014-12-01

    Full Text Available The author presents an integrating pulse modulator (analog signal converter with the pulse frequency and duration modulation similar to sigma-delta modulation (with low switching frequency, without quantization. The modulator is characterized by the absence of the quantization noise inherent in sigma-delta modulator, and a low switching frequency, unlike the pulse-frequency modulator. The modulator is recommended, in particular, to convert signals at the input of the class D power amplifier.

  5. On The Snubber Influence To The Switching And Conduction Losses In A Converter Using Switched Capacitor

    Directory of Open Access Journals (Sweden)

    Viorel DUGAN

    2002-12-01

    Full Text Available The paper deals to design and to compute the snubber parameters influence on the switching and conduction losses of the transistors (IGBT used as bidirectional switches in a converter with switched capacitor. The converter was modelled with difference equations, and the transistors during turn-on and turn-off processes were simulated by dynamically varying resistance models. The energy loss per switching, commutation time, the variation of the transistor voltage etc. and the influence of snubber parameters in each of these cases are shown in the context of a converter used as a 50Hz reactive power controller unit

  6. Hybrid Optical Switching for Data Center Networks

    Directory of Open Access Journals (Sweden)

    Matteo Fiorani

    2014-01-01

    Full Text Available Current data centers networks rely on electronic switching and point-to-point interconnects. When considering future data center requirements, these solutions will raise issues in terms of flexibility, scalability, performance, and energy consumption. For this reason several optical switched interconnects, which make use of optical switches and wavelength division multiplexing (WDM, have been recently proposed. However, the solutions proposed so far suffer from low flexibility and are not able to provide service differentiation. In this paper we introduce a novel data center network based on hybrid optical switching (HOS. HOS combines optical circuit, burst, and packet switching on the same network. In this way different data center applications can be mapped to the optical transport mechanism that best suits their traffic characteristics. Furthermore, the proposed HOS network achieves high transmission efficiency and reduced energy consumption by using two parallel optical switches. We consider the architectures of both a traditional data center network and the proposed HOS network and present a combined analytical and simulation approach for their performance and energy consumption evaluation. We demonstrate that the proposed HOS data center network achieves high performance and flexibility while considerably reducing the energy consumption of current solutions.

  7. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    Science.gov (United States)

    Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

    2018-04-01

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  8. AFIP-6 Fabrication Summary Report

    Energy Technology Data Exchange (ETDEWEB)

    Glenn A. Moore; M. Craig Marshall

    2011-09-01

    The AFIP-6 (ATR Full-size plate In center flux trap Position) experiment was designed to evaluate the performance of monolithic fuels at a scale prototypic of research reactor fuel plates. Two qualified fueled plates were fabricated for the AFIP-6 experiment; to be irradiated in the INL Advanced Test Reactor (ATR). This report provides details of the fuel fabrication efforts, including material selection, fabrication processes, and fuel plate qualification.

  9. Filter Fabrics for Airport Drainage.

    Science.gov (United States)

    1979-09-01

    pneumatically filling a woven polypropylene stocking with sand and vibrating it into a prebored hole, while another method uses a polyester nonwoven fabric...Selected Nonwoven Filter Fabrics," Letter Report, June 1977, U. S. Army Engineer Waterways Experiment Station, CE, Vicksburg, Miss. 18. BalL, J. E...woven and nonwoven plastic filter fabric. It has been developed based on limited field performance observations and the laboratory test evaluation of

  10. High-voltage high-current triggering vacuum switch

    International Nuclear Information System (INIS)

    Alferov, D.F.; Bunin, R.A.; Evsin, D.V.; Sidorov, V.A.

    2012-01-01

    Experimental investigations of switching and breaking capacities of the new high current triggered vacuum switch (TVS) are carried out at various parameters of discharge current. It has been shown that the high current triggered vacuum switch TVS can switch repeatedly a current from units up to ten kiloampers with duration up to ten millisecond [ru

  11. 49 CFR 236.342 - Switch circuit controller.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Switch circuit controller. 236.342 Section 236.342 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION... Instructions § 236.342 Switch circuit controller. Switch circuit controller connected at the point to switch...

  12. A new Zero-Voltage-Transition PWM switching cell

    Energy Technology Data Exchange (ETDEWEB)

    Grigore, V. [Electronics and Telecommunications Faculty `Politebuica` University Bucharest (Romania); Kyyrae, J. [Helsinki University of Technology, Otaniemi (Finland): Institute of Intelligent Power Electronics

    1997-12-31

    In this paper a new Zero-Voltage-Transition (ZVT) PWM switching cell is presented. The proposed switching cell is composed of the normal hard-switched PWM cell (consisting of one active switch and one passive switch), plus an auxiliary circuit (consisting of one active switch and some reactive components). The auxiliary circuit is inactive during the ON and OFF intervals of the switches in the normal PWM switch. However, the transitions between the two states are controlled by the auxiliary circuit. Prior to turn-on, the voltage across the active switch in the PWM cell is forced to zero, thus the turn-on losses of the active switch are practically eliminated. At turn-off the auxiliary circuit behaves like a non-dissipative passive snubber reducing the turn-off losses to a great extent. Zero-Voltage-Transition switching technique almost eliminates switching losses. The active switch operates under ZVT conditions, the passive switch (diode) has a controlled reverse recovery, and the switch in the auxiliary circuit operates under Zero-Current-Switching (ZCS) conditions. (orig.) 6 refs.

  13. 6.1-MV, 0.79-MA laser-triggered gas switch for multimodule, multiterawatt pulsed-power accelerators

    Directory of Open Access Journals (Sweden)

    K. R. LeChien

    2010-03-01

    Full Text Available A 6.1-MV, 0.79-MA laser-triggered gas switch (LTGS is used to synchronize the 36 modules of the Z machine at Sandia National Laboratories. Each module includes one switch, which serves as the last command-fired switch of the module, and hence is used to determine the time at which each module electrically closes relative to the other modules. The switch is ∼81-cm in length, ∼45-cm in diameter, and is immersed in mineral oil. The outer switch envelope consists of six corrugated monomer-cast acrylic insulators and five contoured stainless-steel rings. The trigger electrodes are fabricated from copper-infused tungsten. The switch is pressurized with several atmospheres of sulfur hexafluoride (SF_{6}, which is turbulently purged within 2 seconds after every shot. Each switch is powered from a 6-MV, 0.78-MJ Marx generator which pulse charges a 24-nF intermediate-store water capacitor in 1.4-μs. Closure of the switch allows power to flow into pulse-forming transmission lines. The power pulse is subsequently compressed by water switches, which results in a total accelerator output power in excess of 70-TW. A previous version of the LTGS performed exceptionally at a 5.4-MV, 0.7-MA level on an engineering test module used for switch development. It exhibited a 1-σ jitter of ∼5  ns, a prefire and flashover rate less than 0.1%, and a lifetime in excess of 150 shots. When installed on the Z accelerator, however, the switch exhibited a prefire probability of ∼3%, a flashover probability of ∼7%, and a 15-ns jitter. The difference in performance is attributed to several factors such as higher total charge transfer, exposure to more debris, and more stressful dynamic mechanical loading upon machine discharge. Under these conditions, the replacement lifetime was less than ten shots. Since refurbishment of Z in October 2007, there have been three LTGS design iterations to improve the performance at 6.1-MV. The most recent design exhibits a

  14. A mechanical switch device made of a polyimide-coated microfibrillated cellulose sheet

    Science.gov (United States)

    Couderc, S.; Ducloux, O.; Kim, B. J.; Someya, T.

    2009-05-01

    This paper covers innovative results on the development of an electrostatically actuated mechanical switch device made of a microfibrillated cellulose sheet coated with a thin polyimide layer. For microelectronic applications, biodegradable and biocompatible nanomaterials such as microfibrillated cellulose (MFC) have attracted attention. The studied MFC sheets reveal a fibrous-like morphology composed of cellulose nanofibres leading to a high surface roughness. Moreover, the porous microstructure and the hydrophilic nature of the MFC sheet induce poor dielectric properties. These shortcomings make MFC sheets relatively unsuitable for electronic applications. In order to overcome these drawbacks, both sides of the MFC sheet are coated with a thin polyimide layer, which greatly improves the dielectric properties, moisture sensitivity and sheet surface roughness. This new sheet is then patterned in order to be used as a substrate for the fabrication of a micromechanical switch. Gold electrodes are added onto the sheet for electrostatic actuation and switch detection. The pull-down voltage of this switch, defined as the actuation voltage needed to establish a contact between the free end of the cantilever beam and the substrate, is measured to be about 55 V.

  15. Electronic bipolar resistive switching behavior in Ni/VOx/Al device

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Mengseng [School of Electronic Information Engineering, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130 (China); School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China); Zhang, Kailiang, E-mail: kailiang_zhang@163.com [School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China); Yang, Ruixia, E-mail: yangrx@hebut.edu.cn [School of Electronic Information Engineering, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130 (China); Wang, Fang; Zhang, Zhichao; Wu, Shijian [School of Electronic Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384 (China)

    2017-07-15

    Highlights: • The resistive random access memory of Ni/VOx/Al was fabricated. • The device has the electronic bipolar resistive switching characteristic. • The activity energy (Ea) of HRS has been calculated. • The reasons of the degradation of the resistance ratio of HRS/LRS were analyzed. - Abstract: In this paper, the Ni/VOx/Al resistive random access memory (RRAM) device is constructed and it shows bipolar resistive switching behavior, low resistive state (LRS) nonlinearity, and good retention. The set and reset processes are likely induced by the electron trapping and detrapping of trapping centers in the VOx films, respectively. The conduction mechanism in negative/positive region are controlled by space charge limited current mechanism (SCLC)/Schottky emission. The temperature dependence of I–V curves for HRS is measured to confirm the defects trapping and detrapping electrons model. activation energy was calculated to analyze the endurance performance of the device. The detailed analysis of the switching behavior with SCLC mechanism and Schottky emission mechanism could provide useful information for electronic bipolar resistive switching (eBRS) characteristics.

  16. Electronic bipolar resistive switching behavior in Ni/VOx/Al device

    International Nuclear Information System (INIS)

    Xia, Mengseng; Zhang, Kailiang; Yang, Ruixia; Wang, Fang; Zhang, Zhichao; Wu, Shijian

    2017-01-01

    Highlights: • The resistive random access memory of Ni/VOx/Al was fabricated. • The device has the electronic bipolar resistive switching characteristic. • The activity energy (Ea) of HRS has been calculated. • The reasons of the degradation of the resistance ratio of HRS/LRS were analyzed. - Abstract: In this paper, the Ni/VOx/Al resistive random access memory (RRAM) device is constructed and it shows bipolar resistive switching behavior, low resistive state (LRS) nonlinearity, and good retention. The set and reset processes are likely induced by the electron trapping and detrapping of trapping centers in the VOx films, respectively. The conduction mechanism in negative/positive region are controlled by space charge limited current mechanism (SCLC)/Schottky emission. The temperature dependence of I–V curves for HRS is measured to confirm the defects trapping and detrapping electrons model. activation energy was calculated to analyze the endurance performance of the device. The detailed analysis of the switching behavior with SCLC mechanism and Schottky emission mechanism could provide useful information for electronic bipolar resistive switching (eBRS) characteristics.

  17. High-speed electro-optic switch based on nonlinear polymer-clad waveguide incorporated with quasi-in-plane coplanar waveguide electrodes

    Science.gov (United States)

    Jiang, Ming-Hui; Wang, Xi-Bin; Xu, Qiang; Li, Ming; Niu, Dong-Hai; Sun, Xiao-Qiang; Wang, Fei; Li, Zhi-Yong; Zhang, Da-Ming

    2018-01-01

    Nonlinear optical (NLO) polymer is a promising material for active waveguide devices that can provide large bandwidth and high-speed response time. However, the performance of the active devices is not only related to the waveguide materials, but also related to the waveguide and electrode structures. In this paper, a high-speed Mach-Zehnder interferometer (MZI) type of electro-optic (EO) switch based on NLO polymer-clad waveguide was fabricated. The quasi-in-plane coplanar waveguide electrodes were also introduced to enhance the poling and modulating efficiency. The characteristic parameters of the waveguide and electrode were carefully designed and simulated. The switches were fabricated by the conventional micro-fabrication process. Under 1550-nm operating wavelength, a typical fabricated switch showed a low insertion loss of 10.2 dB, and the switching rise time and fall time were 55.58 and 57.98 ns, respectively. The proposed waveguide and electrode structures could be developed into other active EO devices and also used as the component in the polymer-based large-scale photonic integrated circuit.

  18. Ultraviolet Protection by Fabric Engineering

    Directory of Open Access Journals (Sweden)

    Mukesh Kumar Singh

    2013-01-01

    Full Text Available Background. The increasing emission of greenhouse gases has evoked the human being to save the ozone layer and minimize the risk of ultraviolet radiation (UVR. Various fabric structures have been explored to achieve desired ultraviolet protection factor (UPF in various situations. Objective. In this study, the effect of various filament configurations like twisted, flat, intermingled, and textured in multifilament yarns on fabric in different combinations is assessed in order to engineer a fabric of better ultraviolet protection factor (UPF. Methods. In order to engineer a fabric having optimum UV protection with sufficient comfort level in multifilament woven fabrics, four different yarn configurations, intermingled, textured, twisted, and flat, were used to develop twelve different fabric samples. The most UV absorbing and most demanding fibre polyethylene terephthalate (PET was considered in different filament configuration. Results. The combinations of intermingled warp with flat, intermingled, and textured weft provided excellent UVR protection comparatively at about 22.5 mg/cm2 fabric areal density. The presence of twisted yarn reduced the UV protection due to enhanced openness in fabric structure. Conclusion. The appropriate combination of warp and weft threads of different configuration should be selected judiciously in order to extract maximum UV protection and wear comfort attributes in multifilament woven PET fabrics.

  19. Intentionally fabricated autobiographical memories.

    Science.gov (United States)

    Justice, Lucy V; Morrison, Catriona M; Conway, Martin A

    2018-02-01

    Participants generated both autobiographical memories (AMs) that they believed to be true and intentionally fabricated autobiographical memories (IFAMs). Memories were constructed while a concurrent memory load (random 8-digit sequence) was held in mind or while there was no concurrent load. Amount and accuracy of recall of the concurrent memory load was reliably poorer following generation of IFAMs than following generation of AMs. There was no reliable effect of load on memory generation times; however, IFAMs always took longer to construct than AMs. Finally, replicating previous findings, fewer IFAMs had a field perspective than AMs, IFAMs were less vivid than AMs, and IFAMs contained more motion words (indicative of increased cognitive load). Taken together, these findings show a pattern of systematic differences that mark out IFAMs, and they also show that IFAMs can be identified indirectly by lowered performance on concurrent tasks that increase cognitive load.

  20. CONTROL OF BOUNCING IN RF MEMS SWITCHES USING DOUBLE ELECTRODE

    KAUST Repository

    Abdul Rahim, Farhan

    2014-05-01

    MEMS based mechanical switches are seen to be the likely replacements for CMOS based switches due to the several advantages that these mechanical switches have over CMOS switches. Mechanical switches can be used in systems under extreme conditions and also provide more reliability and cause less power loss. A major problem with mechanical switches is bouncing. Bouncing is an undesirable characteristic which increases the switching time and causes damage to the switch structure affecting the overall switch life. This thesis proposes a new switch design that may be used to mitigate bouncing by using two voltage sources using a double electrode configuration. The effect of many switch’s tunable parameters is also discussed and an effective tuning technique is also provided. The results are compared to the current control schemes in literature and show that the double electrode scheme is a viable control option.

  1. High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Young Tea; Chu, Daping, E-mail: dpc31@cam.ac.uk [Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Neeves, Matthew; Placido, Frank [Thin Film Centre, University of the West of Scotland, Paisley PA1 2BE (United Kingdom); Smithwick, Quinn [Disney Research, 521 Circle Seven Drive, Glendale, Los Angeles, California 91201 (United States)

    2014-11-10

    High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO{sub x} thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm{sup 2}, exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively.

  2. High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

    International Nuclear Information System (INIS)

    Chun, Young Tea; Chu, Daping; Neeves, Matthew; Placido, Frank; Smithwick, Quinn

    2014-01-01

    High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO x thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2 cm 2 , exhibiting an optical contrast of 73.11% at the wavelength of 470 nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively

  3. Fabrication of superhydrophobic cotton fabrics using crosslinking polymerization method

    Science.gov (United States)

    Jiang, Bin; Chen, Zhenxing; Sun, Yongli; Yang, Huawei; Zhang, Hongjie; Dou, Haozhen; Zhang, Luhong

    2018-05-01

    With the aim of removing and recycling oil and organic solvent from water, a facile and low-cost crosslinking polymerization method was first applied on surface modification of cotton fabrics for water/oil separation. Micro-nano hierarchical rough structure was constructed by triethylenetetramine (TETA) and trimesoyl chloride (TMC) that formed a polymeric layer on the surface of the fabric and anchored Al2O3 nanoparticles firmly between the fabric surface and the polymer layer. Superhydrophobic property was further obtained through self-assembly grafting of hydrophobic groups on the rough surface. The as-prepared cotton fabric exhibited superoleophilicity in atmosphere and superhydrophobicity both in atmosphere and under oil with the water contact angle of 153° and 152° respectively. Water/oil separation test showed that the as-prepared cotton fabric can handle with various oil-water mixtures with a high separation efficiency over 99%. More importantly, the separation efficiency remained above 98% over 20 cycles of reusing without losing its superhydrophobicity which demonstrated excellent reusability in oil/water separation process. Moreover, the as-prepared cotton fabric possessed good contamination resistance ability and self-cleaning property. Simulation washing process test showed the superhydrophobic cotton fabric maintained high value of water contact angle above 150° after 100 times washing, indicating great stability and durability. In summary, this work provides a brand-new way to surface modification of cotton fabric and makes it a promising candidate material for oil/water separation.

  4. Submicrosecond Power-Switching Test Circuit

    Science.gov (United States)

    Folk, Eric N.

    2006-01-01

    A circuit that changes an electrical load in a switching time shorter than 0.3 microsecond has been devised. This circuit can be used in testing the regulation characteristics of power-supply circuits . especially switching power-converter circuits that are supposed to be able to provide acceptably high degrees of regulation in response to rapid load transients. The combination of this power-switching circuit and a known passive constant load could be an attractive alternative to a typical commercially available load-bank circuit that can be made to operate in nominal constant-voltage, constant-current, and constant-resistance modes. The switching provided by a typical commercial load-bank circuit in the constant-resistance mode is not fast enough for testing of regulation in response to load transients. Moreover, some test engineers do not trust the test results obtained when using commercial load-bank circuits because the dynamic responses of those circuits are, variously, partly unknown and/or excessively complex. In contrast, the combination of this circuit and a passive constant load offers both rapid switching and known (or at least better known) load dynamics. The power-switching circuit (see figure) includes a signal-input section, a wide-hysteresis Schmitt trigger that prevents false triggering in the event of switch-contact bounce, a dual-bipolar-transistor power stage that drives the gate of a metal oxide semiconductor field-effect transistor (MOSFET), and the MOSFET, which is the output device that performs the switching of the load. The MOSFET in the specific version of the circuit shown in the figure is rated to stand off a potential of 100 V in the "off" state and to pass a current of 20 A in the "on" state. The switching time of this circuit (the characteristic time of rise or fall of the potential at the drain of the MOSFET) is .300 ns. The circuit can accept any of three control inputs . which one depending on the test that one seeks to perform: a

  5. Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

    Directory of Open Access Journals (Sweden)

    Robert Göckeritz

    2016-04-01

    Full Text Available Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

  6. Black phosphorus saturable absorber for Q-switched Er:YAG laser at 1645 nm

    Science.gov (United States)

    Guo, Lei; Li, Tao; Zhang, Shuaiyi; Wang, Mingjian; Yang, Kejian; Fan, Mingqi; Zhao, Shengzhi; Li, Ming

    2018-03-01

    A Q-switched Er:YAG solid-state laser at 1645 nm based on black phosphorus (BP) saturable absorbers (SAs) was demonstrated firstly to our knowledge. The BP-SA was fabricated by drop-casting BP nanoplatelets dispersion on a YAG substrate and corresponding saturable absorption properties were characterized at 1.6 μm. By employing as-prepared BP-SAs, stable Q-switched laser operations were achieved with a pulse width of 2.8 μs and a repetition rate of 34 kHz, corresponding to the average output power of 0.33 W. The results verify that BP-SAs have great potential for pulsed 1.6 μm lasers.

  7. PCBM : P3HT polymer composites for photonic crystal all-optical switching applications

    International Nuclear Information System (INIS)

    Li Zhiqiang; Hu Xiaoyong; Zhang Jiaxiang; Yang Hong; Gong Qihuang

    2010-01-01

    An all-optical switching with an operating pump intensity of 1 MW cm -2 is realized in a one-dimensional nonlinear organic photonic crystal made of poly(3-hexylthiophene) doped with 1-(3-methoxycarbonyl)propyl-1-phenyl-(6,6)C 61 , fabricated by focused ion-beam etching. The femtosecond pump and probe method is adopted to measure the transmittance changes of the probe laser based on the photonic bandgap shift induced by the pump laser. Under resonant excitation, a large nonlinear refractive index of the order of 10 -9 cm 2 W -1 is obtained for the polymer composite. A switching time of 58.9 ps is maintained due to intermolecular charge transfer and exciton-exciton annihilation.

  8. PCBM : P3HT polymer composites for photonic crystal all-optical switching applications

    Energy Technology Data Exchange (ETDEWEB)

    Li Zhiqiang; Hu Xiaoyong; Zhang Jiaxiang; Yang Hong; Gong Qihuang, E-mail: xiaoyonghu@pku.edu.c, E-mail: qhgong@pku.edu.c [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China)

    2010-09-29

    An all-optical switching with an operating pump intensity of 1 MW cm{sup -2} is realized in a one-dimensional nonlinear organic photonic crystal made of poly(3-hexylthiophene) doped with 1-(3-methoxycarbonyl)propyl-1-phenyl-(6,6)C{sub 61}, fabricated by focused ion-beam etching. The femtosecond pump and probe method is adopted to measure the transmittance changes of the probe laser based on the photonic bandgap shift induced by the pump laser. Under resonant excitation, a large nonlinear refractive index of the order of 10{sup -9} cm{sup 2} W{sup -1} is obtained for the polymer composite. A switching time of 58.9 ps is maintained due to intermolecular charge transfer and exciton-exciton annihilation.

  9. A new coupling mechanism between two graphene electron waveguides for ultrafast switching

    Science.gov (United States)

    Huang, Wei; Liang, Shi-Jun; Kyoseva, Elica; Ang, Lay Kee

    2018-03-01

    In this paper, we report a novel coupling between two graphene electron waveguides, in analogy the optical waveguides. The design is based on the coherent quantum mechanical tunneling of Rabi oscillation between the two graphene electron waveguides. Based on this coupling mechanism, we propose that it can be used as an ultrafast electronic switching device. Based on a modified coupled mode theory, we construct a theoretical model to analyze the device characteristics, and predict that the switching speed is faster than 1 ps and the on–off ratio exceeds 106. Due to the long mean free path of electrons in graphene at room temperature, the proposed design avoids the limitation of low temperature operation required in the traditional design by using semiconductor quantum-well structure. The layout of our design is similar to that of a standard complementary metal-oxide-semiconductor transistor that should be readily fabricated with current state-of-art nanotechnology.

  10. Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

    Energy Technology Data Exchange (ETDEWEB)

    Göckeritz, Robert; Homonnay, Nico; Müller, Alexander [Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany); Fuhrmann, Bodo [Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany); Schmidt, Georg, E-mail: georg.schmidt@physik.uni-halle.de [Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany); Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany)

    2016-04-15

    Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

  11. CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology

    Directory of Open Access Journals (Sweden)

    Jose Luis Muñoz-Gamarra

    2016-02-01

    Full Text Available This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS relays using a commercial complementary metal oxide semiconductor (CMOS technology (ST 65 nm following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V, good ION/IOFF (103 ratio, abrupt subthreshold swing (4.3 mV/decade and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm. With these dimensions, the operable Cell area of the switch will be 3.5 μm (length × 0.2 μm (100 nm width + 100 nm gap = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach.

  12. A New Low-Cost Hybrid Switched Reluctance Motor for Adjustable-Speed Pump Applications

    DEFF Research Database (Denmark)

    Lu, Kaiyuan; Rasmussen, Peter Omand; Watkins, Steve

    2011-01-01

    This paper presents a new low-cost hybrid switched reluctance (HSR) motor intended for use in adjustable-speed pump drive systems. The motor is a single-phase motor, driven by a unipolar converter, which uses both the reluctance torque and the permanent magnet interaction torque. Compared...... with conventional single-phase switched reluctance motors, it has an increased torque density. The cogging torque is beneficially used in this motor for reducing the torque ripple. It is demonstrated that such a motor drive system can be a suitable candidate to advantageously compete with the existing motor drive...... systems for low-cost applications. Finite-element models are used to analyze and predict the motor's performance. The proposed motor drive system has been fabricated, and its performance has been tested in the laboratory. These experimental results are also presented....

  13. EXPERIMENTATION OF THREE PHASE OUTER ROTATING SWITCHED RELUCTANCE MOTOR WITH SOFT MAGNETIC COMPOSITE MATERIALS

    Directory of Open Access Journals (Sweden)

    N. C. LENIN

    2017-01-01

    Full Text Available This paper presents the application of Soft Magnetic Composite (SMC material in Outer Rotating Switched Reluctance Motor (ORSRM. The presented stator core of the Switched Reluctance Motor was made of two types of material, the classical laminated silicon steel sheet and the soft magnetic composite material. First, the stator core made of laminated steel has been analysed. The next step is to analyse the identical geometry SRM with the soft magnetic composite material, SOMALOY for its stator core. The comparisons of both cores include the calculated torque and torque ripple, magnetic conditions, simplicity of fabrication and cost. The finite element method has been used to analyse the magnetic conditions and the calculated torque. Finally, tested results shows that SMC is a better choice for SRM in terms of torque ripple and power density.

  14. Fault Tolerant Operation of ISOP Multicell Dc-Dc Converter Using Active Gate Controlled SiC Protection Switch

    Directory of Open Access Journals (Sweden)

    Yusuke Hayashi

    2016-01-01

    Full Text Available An active gate controlled semiconductor protection switch using SiC-MOSFET is proposed to achieve the fault tolerant operation of ISOP (Input Series and Output Parallel connected multicell dc-dc converter. The SiC-MOSFET with high temperature capability simplifies the configuration of the protection circuit, and its on-resistance control by the active gate controller realizes the smooth protection without the voltage and the current surges. The first laboratory prototype of the protection switch is fabricated by using a SiC-MOSFET with a high frequency buck chopper for the active gate controller. The effectiveness of the proposed protection switch is verified, taking the impact of the volume reduction into account.

  15. Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

    Energy Technology Data Exchange (ETDEWEB)

    Growden, Tyler A.; Berger, Paul R., E-mail: pberger@ieee.org [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Brown, E. R.; Zhang, Weidong [Departments of Physics and Electrical Engineering, Wright State University, Dayton, Ohio 45435 (United States); Droopad, Ravi [Ingram School of Engineering, Texas State University, San Marcos, Texas 78666 (United States)

    2015-10-12

    An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In{sub 0.53}Ga{sub 0.47}As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%–90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.

  16. Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

    Directory of Open Access Journals (Sweden)

    Atul Thakre

    2017-12-01

    Full Text Available An enhanced, repeatable and robust resistive switching phenomenon was observed in Cr substituted BaTiO3 polar ferroelectric thin films; fabricated and deposited by the sol-gel approach and spin coating technique, respectively. An enhanced bistable bipolar resistive switching (BRS phenomenon without electro-forming process, low switching voltage (∼ 2 V and moderate retention characteristics of 104 s along with a high Roff/Ron resistance ratio ∼103 was achieved. The current conduction analysis showed that the space charge limited conduction (SCLC and Schottky emission conduction dominate in the high voltage range, while thermally active charge carriers (ohmic in the lower voltage range. The impedance spectroscopy study indicates the formation of current conducting path and rupturing of oxygen vacancies during SET and RESET process.

  17. Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

    Science.gov (United States)

    Thakre, Atul; Kumar, Ashok

    2017-12-01

    An enhanced, repeatable and robust resistive switching phenomenon was observed in Cr substituted BaTiO3 polar ferroelectric thin films; fabricated and deposited by the sol-gel approach and spin coating technique, respectively. An enhanced bistable bipolar resistive switching (BRS) phenomenon without electro-forming process, low switching voltage (˜ 2 V) and moderate retention characteristics of 104 s along with a high Roff/Ron resistance ratio ˜103 was achieved. The current conduction analysis showed that the space charge limited conduction (SCLC) and Schottky emission conduction dominate in the high voltage range, while thermally active charge carriers (ohmic) in the lower voltage range. The impedance spectroscopy study indicates the formation of current conducting path and rupturing of oxygen vacancies during SET and RESET process.

  18. Broadband nonvolatile photonic switching based on optical phase change materials: beyond the classical figure-of-merit.

    Science.gov (United States)

    Zhang, Qihang; Zhang, Yifei; Li, Junying; Soref, Richard; Gu, Tian; Hu, Juejun

    2018-01-01

    In this Letter, we propose a broadband, nonvolatile on-chip switch design in the telecommunication C-band with record low loss and crosstalk. The unprecedented device performance builds on: 1) a new optical phase change material (O-PCM) Ge 2 Sb 2 Se 4 Te 1 (GSST), which exhibits significantly reduced optical attenuation compared to traditional O-PCMs, and 2) a nonperturbative design that enables low-loss device operation beyond the classical figure-of-merit (FOM) limit. We further demonstrate that the 1-by-2 and 2-by-2 switches can serve as basic building blocks to construct nonblocking and nonvolatile on-chip switching fabric supporting arbitrary numbers of input and output ports.

  19. Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Kyungah; Park, Sangsu; Lee, Kwanghee; Lee, Byounghun; Hwang, Hyunsang [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Insung; Jung, Seungjae; Jo, Minseok; Park, Jubong; Shin, Jungho; Biju, Kuyyadi P; Kong, Jaemin, E-mail: kyseo@gist.ac.kr, E-mail: hwanghs@gist.ac.kr [School of Material Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

    2011-06-24

    We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device.

  20. Resistive switching in Ag-TiO{sub 2} contacts

    Energy Technology Data Exchange (ETDEWEB)

    Ghenzi, N., E-mail: ghenzi@cnea.gov.ar [Gerencia de Investigacion y Aplicaciones, CAC, CNEA, (1650) San Martin, Pcia. de Buenos Aires (Argentina); Stoliar, P. [Gerencia de Investigacion y Aplicaciones, CAC, CNEA, (1650) San Martin, Pcia. de Buenos Aires (Argentina); Escuela de Ciencia y Tecnologia, Campus Migueletes, UNSAM, Pcia. de Buenos Aires (Argentina); Fuertes, M.C. [Gerencia Quimica, CAC, CNEA, (1650) San Martin, Pcia. de Buenos Aires (Argentina); Marlasca, F.G.; Levy, P. [Gerencia de Investigacion y Aplicaciones, CAC, CNEA, (1650) San Martin, Pcia. de Buenos Aires (Argentina)

    2012-08-15

    We study the electric pulse induced resistance switching of TiO{sub 2}-Ag contacts at room temperature, exploring both unipolar and bipolar switching modes. Initially we observed unipolar response. After hundred pulsing cycles the unipolar switching response vanishes but the device can still be operated in bipolar switching regime. The underlying mechanism for resistance switching is modeled in terms of formation and rupture of filament, and movement of oxygen vacancies.

  1. Analytical Modeling and Simulation of Four-Switch Hybrid Power Filter Working with Sixfold Switching Symmetry

    Czech Academy of Sciences Publication Activity Database

    Tlustý, J.; Škramlík, Jiří; Švec, J.; Valouch, Viktor

    2012-01-01

    Roč. 2012, č. 292178 (2012), s. 1-17 ISSN 1024-123X Institutional support: RVO:61388998 Keywords : analytical modeling * four-switch hybrid power filter * sixfold switching symmetry Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.383, year: 2012 http://www.hindawi.com/journals/mpe/2012/292178/

  2. Optimization of multi-branch switched diversity systems

    KAUST Repository

    Nam, Haewoon

    2009-10-01

    A performance optimization based on the optimal switching threshold(s) for a multi-branch switched diversity system is discussed in this paper. For the conventional multi-branch switched diversity system with a single switching threshold, the optimal switching threshold is a function of both the average channel SNR and the number of diversity branches, where computing the optimal switching threshold is not a simple task when the number of diversity branches is high. The newly proposed multi-branch switched diversity system is based on a sequence of switching thresholds, instead of a single switching threshold, where a different diversity branch uses a different switching threshold for signal comparison. Thanks to the fact that each switching threshold in the sequence can be optimized only based on the number of the remaining diversity branches, the proposed system makes it easy to find these switching thresholds. Furthermore, some selected numerical and simulation results show that the proposed switched diversity system with the sequence of optimal switching thresholds outperforms the conventional system with the single optimal switching threshold. © 2009 IEEE.

  3. Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling

    Czech Academy of Sciences Publication Activity Database

    Kettle, J.; Whitelegg, S.; Song, M.; Madec, M. B.; Yeates, S.; Turner, M. L.; Kotačka, L.; Kolařík, Vladimír

    2009-01-01

    Roč. 27, č. 6 (2009), s. 2801-2804 ISSN 1071-1023 R&D Projects: GA ČR GA102/05/2325 Institutional research plan: CEZ:AV0Z20650511 Keywords : argon * milling * nanolithography * organic semiconductors * semiconductor diodes Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.460, year: 2009

  4. Large-scale nanoelectromechanical switches based on directly deposited nanocrystalline graphene on insulating substrates

    Science.gov (United States)

    Sun, Jian; Schmidt, Marek E.; Muruganathan, Manoharan; Chong, Harold M. H.; Mizuta, Hiroshi

    2016-03-01

    The direct growth of graphene on insulating substrate is highly desirable for the commercial scale integration of graphene due to the potential lower cost and better process control. We report a simple, direct deposition of nanocrystalline graphene (NCG) on insulating substrates via catalyst-free plasma-enhanced chemical vapor deposition at relatively low temperature of ~800 °C. The parametric study of the process conditions that we conducted reveals the deposition mechanism and allows us to grow high quality films. Based on such film, we demonstrate the fabrication of a large-scale array of nanoelectromechanical (NEM) switches using regular thin film process techniques, with no transfer required. Thanks to ultra-low thickness, good uniformity, and high Young's modulus of ~0.86 TPa, NCG is considered as a promising material for high performance NEM devices. The high performance is highlighted for the NCG switches, e.g. low pull-in voltage integration of graphene due to the potential lower cost and better process control. We report a simple, direct deposition of nanocrystalline graphene (NCG) on insulating substrates via catalyst-free plasma-enhanced chemical vapor deposition at relatively low temperature of ~800 °C. The parametric study of the process conditions that we conducted reveals the deposition mechanism and allows us to grow high quality films. Based on such film, we demonstrate the fabrication of a large-scale array of nanoelectromechanical (NEM) switches using regular thin film process techniques, with no transfer required. Thanks to ultra-low thickness, good uniformity, and high Young's modulus of ~0.86 TPa, NCG is considered as a promising material for high performance NEM devices. The high performance is highlighted for the NCG switches, e.g. low pull-in voltage information (ESI) available. See DOI: 10.1039/c6nr00253f

  5. GaN transistors on Si for switching and high-frequency applications

    Science.gov (United States)

    Ueda, Tetsuzo; Ishida, Masahiro; Tanaka, Tsuyoshi; Ueda, Daisuke

    2014-10-01

    In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

  6. Highly compact (4F2) and well behaved nano-pillar transistor controlled resistive switching cell for neuromorphic system application.

    Science.gov (United States)

    Chen, Bing; Wang, Xinpeng; Gao, Bin; Fang, Zheng; Kang, Jinfeng; Liu, Lifeng; Liu, Xiaoyan; Lo, Guo-Qiang; Kwong, Dim-Lee

    2014-10-31

    To simplify the architecture of a neuromorphic system, it is extremely desirable to develop synaptic cells with the capacity of low operation power, high density integration, and well controlled synaptic behaviors. In this study, we develop a resistive switching device (ReRAM)-based synaptic cell, fabricated by the CMOS compatible nano-fabrication technology. The developed synaptic cell consists of one vertical gate-all-around Si nano-pillar transistor (1T) and one transition metal-oxide based resistive switching device (1R) stacked on top of the vertical transistor directly. Thanks to the vertical architecture and excellent controllability on the ON/OFF performance of the nano-pillar transistor, the 1T1R synaptic cell shows excellent characteristics such as extremely high-density integration ability with 4F(2) footprint, ultra-low operation current (<2 nA), fast switching speed (<10 ns), multilevel data storage and controllable synaptic switching, which are extremely desirable for simplifying the architecture of neuromorphic system.

  7. Unidirectional Fabric Drape Testing Method.

    Science.gov (United States)

    Mei, Zaihuan; Shen, Wei; Wang, Yan; Yang, Jingzhi; Zhou, Ting; Zhou, Hua

    2015-01-01

    In most cases, fabrics such as curtains, skirts, suit pants and so on are draped under their own gravity parallel to fabric plane while the gravity is perpendicular to fabric plane in traditional drape testing method. As a result, it does not conform to actual situation and the test data is not convincing enough. To overcome this problem, this paper presents a novel method which simulates the real mechanical conditions and ensures the gravity is parallel to the fabric plane. This method applied a low-cost Kinect Sensor device to capture the 3-dimensional (3D) drape profile, thus we obtained the drape degree parameters and aesthetic parameters by 3D reconstruction and image processing and analysis techniques. The experiment was conducted on our self-devised drape-testing instrument by choosing different kinds of weave structure fabrics as our testing samples and the results were compared with those of traditional method and subjective evaluation. Through regression and correlation analysis we found that this novel testing method was significantly correlated with the traditional and subjective evaluation method. We achieved a new, non-contact 3D measurement method for drape testing, namely unidirectional fabric drape testing method. This method is more suitable for evaluating drape behavior because it is more in line with actual mechanical conditions of draped fabrics and has a well consistency with the requirements of visual and aesthetic style of fabrics.

  8. Switched capacitor DC-DC converter with switch conductance modulation and Pesudo-fixed frequency control

    DEFF Research Database (Denmark)

    Larsen, Dennis Øland; Vinter, Martin; Jørgensen, Ivan Harald Holger

    A switched capacitor dc-dc converter with frequency-planned control is presented. By splitting the output stage switches in eight segments the output voltage can be regulated with a combination of switching frequency and switch conductance. This allows for switching at predetermined frequencies, 31.......25 kHz, 250 kHz, 500 kHz, and 1 MHz, while maintaining regulation of the output voltage. The controller is implemented in 180 CMOS with a 1/3 series-parallel output stage designed for 3.6–4.2 V input, 1.2 V output, and 1–40 mA load current. The proposed controller is compared with a co-integrated pulse...

  9. Engineering Silver Nanowire Networks: From Transparent Electrodes to Resistive Switching Devices.

    Science.gov (United States)

    Du, Haiwei; Wan, Tao; Qu, Bo; Cao, Fuyang; Lin, Qianru; Chen, Nan; Lin, Xi; Chu, Dewei

    2017-06-21

    Metal nanowires (NWs) networks with high conductance have shown potential applications in modern electronic components, especially the transparent electrodes over the past decade. In metal NW networks, the electrical connectivity of nanoscale NW junction can be modulated for various applications. In this work, silver nanowire (Ag NW) networks were selected to achieve the desired functions. The Ag NWs were first synthesized by a classic polyol process, and spin-coated on glass to fabricate transparent electrodes. The as-fabricated electrode showed a sheet resistance of 7.158 Ω □ -1 with an optical transmittance of 79.19% at 550 nm, indicating a comparable figure of merit (FOM, or Φ TC ) (13.55 × 10 -3 Ω -1 ). Then, two different post-treatments were designed to tune the Ag NWs for not only transparent electrode but also for threshold resistive switching (RS) application. On the one hand, the Ag NW film was mechanically pressed to significantly improve the conductance by reducing the junction resistance. On the other hand, an Ag@AgO x core-shell structure was deliberately designed by partial oxidation of Ag NWs through simple ultraviolet (UV)-ozone treatment. The Ag core can act as metallic interconnect and the insulating AgO x shell acts as a switching medium to provide a conductive pathway for Ag filament migration. By fabricating Ag/Ag@AgO x /Ag planar structure, a volatile threshold switching characteristic was observed and an on/off ratio of ∼100 was achieved. This work showed that through different post-treatments, Ag NW network can be engineered for diverse functions, transforming from transparent electrodes to RS devices.

  10. Switching between phenotypes and population extinction

    Science.gov (United States)

    Lohmar, Ingo; Meerson, Baruch

    2011-11-01

    Many types of bacteria can survive under stress by switching stochastically between two different phenotypes: the “normals” who multiply fast, but are vulnerable to stress, and the “persisters” who hardly multiply, but are resilient to stress. Previous theoretical studies of such bacterial populations have focused on the fitness: the asymptotic rate of unbounded growth of the population. Yet for an isolated population of established (and not very large) size, a more relevant measure may be the population extinction risk due to the interplay of adverse extrinsic variations and intrinsic noise of birth, death and switching processes. Applying a WKB approximation to the pertinent master equation of such a two-population system, we quantify the extinction risk, and find the most likely path to extinction under both favorable and adverse conditions. Analytical results are obtained both in the biologically relevant regime when the switching is rare compared with the birth and death processes, and in the opposite regime of frequent switching. We show that rare switches are most beneficial in reducing the extinction risk.

  11. Ways to Optimize Analogue Switched Circuits

    Directory of Open Access Journals (Sweden)

    J. Hospodka

    2008-12-01

    Full Text Available This paper describes how analogue switched circuits (switched-capacitor and switched-current circuits can be optimized by means of a personal computer. The optimization of this kind of circuits is not so common and their analysis is more difficult in comparison with continuously working circuits. Firstly, the nonidealities occurring in these circuits whose effect on their characteristics should be optimized are discussed. Then a few ways to analyze analogue switched circuits are shown. From all optimization algorithms applicable for this kind of optimization, two ones that seem to be the most promising are proposed. The differential evolution (one of evolutionary algorithms combined with the simplex method was found to be most appropriate from these two ones. Two types of programs are required for the optimization of these circuits: a program for implementing calculations of the used optimization algorithm and a program for the analysis of the optimized circuit. Several suitable computer programs from both of the groups together with their proper settings according to authors’ experience are proposed. At the end of the paper, an example of a switched-current circuit optimization documenting the previous description is presented.

  12. Arduino Based RFID Line Switching Using SSR

    Directory of Open Access Journals (Sweden)

    Michael E.

    2017-10-01

    Full Text Available The importance of line switching cannot be overemphasized as they are used to connect and disconnect substations to and from a distribution grid. At the cradle of technology line switching was achieved via the use of manual switches or fuses which could endanger life as a result of electrocution when expose during maintenance. This ill prompted the development of automated line switching using relays and contactors. With time this tends to fail as a result of wearing of the contact which is as a result of arcing and low voltage. To avert all these ills this paper presents Arduino based Radio Frequency Identification RFID line switching using Solid State Relay SSR. This is to ensure the safety of operators or technologist and to also avert the problem associated with relays and contactors using SSR. This was achieved using RFID RC-522 reader ardriuno Uno SSR and other discrete components. The system was tested and worked perfectly reducing the risk of electrocution and eliminating damage wearing of the contacts common with contactors and relays.

  13. Commitment and Switching Intentions: Customers and Brands

    Directory of Open Access Journals (Sweden)

    Juliana Werneck Rodrigues

    2012-12-01

    Full Text Available This study aims to evaluate the relationship between a customer’s brand switching intentions and his commitment to a brand. Based on a literature review, constructs related to customer brand commitment were identified (affective and continuance commitment, trust, satisfaction, switching costs and alternative attractiveness and their roles in the formation of brand switching intentions hypothesized. Through a cross-sectional survey, a sample of 201 smartphone users was collected to test the proposed relationships. Data analysis was carried out via structural equations modeling, with direct effects of trust, satisfaction, switching costs and alternative attractiveness upon the different kinds of commitment being verified. Furthermore, both types of brand commitment (affective and continuance were found to negatively impact a customer’s intention to switch brands. Regarding enterprise customer strategies, the research findings suggest that, if firms are able to track customer brand commitment, they could use such knowledge to develop better relationship strategies, minimizing customer defection and further developing customer value to the company.

  14. Fabrication for precision mechanisms. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Gillespie, L.K.

    1980-03-01

    The fabrication of components and assemblies for miniature precision mechanisms provides a variety of exacting manufacturing challenges. Size alone makes many parts hard to pick up, handle, measure, and install. This same small size causes more distortion or bending during machining, assembly, and welding. Some parts even float on the cleaning and deburring solutions. Tools break easily in very small holes, and surface finishes play an important role in part operation. Twenty-five manufacturing operations were studied to improve the precision of existing machining and assembly techniques. The study included the machining of metals and plastics using techniques new to the manufacture of miniature switches, timers, and actuators. Drilling, tapping, and press-fitting miniature features were evaluated. Fixturing and handling techniques, friction reduction, and the forming of ceramic parts were also studied. Many of the new approaches from this study have been incorporated into existing processes and further refined. Detailed observations have been reported in 33 other Bendix reports and the highlights of those observations are summarized in this study.

  15. Nuclear fuel fabrication - developing indigenous capability

    International Nuclear Information System (INIS)

    Gupta, U.C.; Jayaraj, R.N.; Meena, R.; Sastry, V.S.; Radhakrishna, C.; Rao, S.M.; Sinha, K.K.

    1997-01-01

    Nuclear Fuel Complex (NFC), established in early 70's for production of fuel for PHWRs and BWRs in India, has made several improvements in different areas of fuel manufacturing. Starting with wire-wrap type of fuel bundles, NFC had switched over to split spacer type fuel bundle production in mid 80's. On the upstream side slurry extraction was introduced to prepare the pure uranyl nitrate solution directly from the MDU cake. Applying a thin layer of graphite to the inside of the tube was another modification. The Complex has developed cost effective and innovative techniques for these processes, especially for resistance welding of appendages on the fuel elements which has been a unique feature of the Indian PHWR fuel assemblies. Initially, the fuel fabrication plants were set-up with imported process equipment for most of the pelletisation and assembly operations. Gradually with design and development of indigenous equipment both for production and quality control, NFC has demonstrated total self reliance in fuel production by getting these special purpose machines manufactured indigenously. With the expertise gained in different areas of process development and equipment manufacturing, today NFC is in a position to offer know-how and process equipment at very attractive prices. The paper discusses some of the new processes that are developed/introduced in this field and describes different features of a few PLC based automatic equipment developed. Salient features of innovative techniques being adopted in the area Of UO 2 powder production are also briefly indicated. (author)

  16. DRAPING SIMULATION OF WOVEN FABRICS

    Energy Technology Data Exchange (ETDEWEB)

    Rodgers, William [General Motors LLC; Jin, Xiaoshi [ESI Group NA; Zhu, Jiang [Optimal CAE; Wathen, Terrence [General Motors LLC; Doroudian2, Mark [ESI Group NA; Aitharaju, Venkat [General Motors LLC

    2016-09-07

    Woven fabric composites are extensively used in molding complex geometrical shapes due to their high conformability compared to other fabrics. Preforming is an important step in the overall process, where the two-dimensional fabric is draped to become the three-dimensional shape of the part prior to resin injection. During preforming, the orientation of the yarns may change significantly compared to the initial orientations. Accurate prediction of the yarn orientations after molding is important for evaluating the structural performance of the final part. This paper presents a systematic investigation of the angle changes during the preform operation for carbon fiber twill and satin weave fabrics. Preforming experiments were conducted using a truncated pyramid mold geometry designed and fabricated at the General Motors Research Laboratories. Predicted results for the yarn orientations were compared with experimental results and good agreement was observed

  17. Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications

    Science.gov (United States)

    Wang, Yan; Liu, Qi; Long, Shibing; Wang, Wei; Wang, Qin; Zhang, Manhong; Zhang, Sen; Li, Yingtao; Zuo, Qingyun; Yang, Jianhong; Liu, Ming

    2010-01-01

    In this paper, the resistive switching characteristics in a Cu/HfO2:Cu/Pt sandwiched structure is investigated for multilevel non-volatile memory applications. The device shows excellent resistive switching performance, including good endurance, long retention time, fast operation speed and a large storage window (ROFF/RON>107). Based on the temperature-dependent test results, the formation of Cu conducting filaments is believed to be the reason for the resistance switching from the OFF state to the ON state. By integrating the resistive switching mechanism study and the device fabrication, different resistance values are achieved using different compliance currents in the program process. These resistance values can be easily distinguished in a large temperature range, and can be maintained over 10 years by extrapolating retention data at room temperature. The integrated experiment and mechanism studies set up the foundation for the development of high-performance multilevel RRAM.

  18. Highly uniform bipolar resistive switching characteristics in TiO2/BaTiO3/TiO2 multilayer

    International Nuclear Information System (INIS)

    Ma, W. J.; Zhang, X. Y.; Wang, Ying; Zheng, Yue; Lin, S. P.; Luo, J. M.; Wang, B.; Li, Z. X.

    2013-01-01

    Nanoscale multilayer structure TiO 2 /BaTiO 3 /TiO 2 has been fabricated on Pt/Ti/SiO 2 /Si substrate by chemical solution deposition method. Highly uniform bipolar resistive switching (BRS) characteristics have been observed in Pt/TiO 2 /BaTiO 3 /TiO 2 /Pt cells. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized oxygen vacancies should be important to the resistive switching behavior. X-ray photoelectron spectroscopy results indicated that oxygen vacancies in TiO 2 play a crucial role in the resistive switching phenomenon and the introduced TiO 2 /BaTiO 3 interfaces result in the high uniformity of bipolar resistive switching characteristics

  19. Fabricating multifunctional silver nanoparticles-coated cotton fabric

    Directory of Open Access Journals (Sweden)

    Mohammad Shateri-Khalilabad

    2017-05-01

    Full Text Available Silver nanoparticles with high density coating were formed on the surface of cotton fabric through pre-activation by potassium hydroxide and in situ reduction of silver nitrate. The silver nanoparticles-coated fabric was then reacted with hexadecyltrimethoxysilane, which resulted in the formation of low surface energy layer around the fabric. The fabrics were characterized by reflectance spectrophotometry, scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction patterns. Wettability properties were measured by contact angle goniometry and shedding angle technique. Antibacterial activity was determined against Gram-positive Staphylococcus aureus and Gram-negative Escherichia coli. Ultraviolet-blocking was measured via transmittance data in the range of 280–400 nm. Microscopy images showed the formation of uniform and high density coating of silver on the surface of cotton fibers. The fabric showed hydrophobicity with CA of 158 ± 4.3° and SHA of 7°. Also, it demonstrated a high antibacterial activity against two bacterial challenges, as shown via formation of inhibition zone. Excellent ultraviolet protection of the fabric was demonstrated by ultraviolet protection factor value of 296. The fabric also showed good durability against repeated laundering.

  20. Development of laser marking system with electro-optic Q-switch

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Cheol Jung; Kim, Jeong Moog; Kim, Kwang Suk; Park, Seung Kyu; Baik, Sung Hoon

    1995-11-01

    We developed a high repetition electro-optic Q switch Nd:YAG laser and scan system for laser marking. We localized the scan mirrors and their mounts. We made the database for the optical properties of commercial flat-field lenses with our optics design software. We fabricated the detailed network between the galvanometer based beam scanning system and the laser generator. To accelerate the commercialization by the joint company, the training and transfer of technology were pursued in the joint participation by company researchers from the early stage. (author). 8 refs., 6 tabs., 27 figs.

  1. Development of laser marking system with electro-optic Q-switch

    International Nuclear Information System (INIS)

    Kim, Cheol Jung; Kim, Jeong Moog; Kim, Kwang Suk; Park, Seung Kyu; Baik, Sung Hoon.

    1995-11-01

    We developed a high repetition electro-optic Q switch Nd:YAG laser and scan system for laser marking. We localized the scan mirrors and their mounts. We made the database for the optical properties of commercial flat-field lenses with our optics design software. We fabricated the detailed network between the galvanometer based beam scanning system and the laser generator. To accelerate the commercialization by the joint company, the training and transfer of technology were pursued in the joint participation by company researchers from the early stage. (author). 8 refs., 6 tabs., 27 figs

  2. Single-electron switching effect in graphene parallel-coupled double quantum dots

    Science.gov (United States)

    Arai, M.; Masubuchi, S.; Machida, T.

    2011-12-01

    We have fabricated parallel-coupled quantum dots on single-layer graphene. The tunnel coupling between the quantum dots can be tuned by a graphene in-plane gate. Owing to the tunnel coupling, the Coulomb blockade oscillation peaks exhibit periodic shifts as the number of electron in the non-conducting side-coupled QD is changed. The result suggests the observation of the single electron switching effect, which is a prerequisite for a single photon detection scheme using parallel-coupled quantum dots.

  3. A new switching characteristics of highly doped multi-quantum well

    CERN Document Server

    Song, C K

    1999-01-01

    A new type of hysteretic current-voltage characteristics, which switched from a low conductance off-state into a high conductance on-state at a threshold voltage and the high conductance state was sustained even when the bias voltage reduced below the threshold voltage, was experimentally observed for the highly doped multi-quantum well structure. The characteristics were attributed to confinement of electrons and impact ionization of the confined electrons out of the quantum wells. The test devices employing 10 periods of quantum wells were fabricated by using AlGaAs/GaAs semiconductor heterostructure and I-V characteristics were examined.

  4. Investigation of the environmental implications of the CNT switch through its life cycle

    Science.gov (United States)

    Dahlben, Lindsay Johanna

    Carbon nanotubes (CNTs) are unique allotropes of carbon that have high tensile strength, a high Young's modulus, good thermal conductivity, and depending on the CNT chirality can be metallic or semiconducting. These mechanical, thermal, and electrical properties make CNTs an attractive element in electronic applications such as conductive films, photovoltaics, non-volatile memory devices, batteries, sensors, and displays. Although commercialization of CNT-enabled products is increasing, there remains a significant lack of information regarding the health effects and environmental impacts of CNTs. Some studies have even shown that the behavior, toxicity, and persistence of CNTs may differ from bulk heterogeneous carbon. Given these uncertainties, it is prudent to assess the environmental attributes of CNT products and processes now to discover and potentially prevent adverse effects. This study investigates the environmental implications of a non-volatile bi-stable electromechanical CNT switch through its life cycle. Life cycle assessment (LCA) methodology is used to track the environmental impacts of the CNT switch through its fabrication and expected use and end-of-life (EOL) stages. Process parameters, energy consumption, input materials, output emissions, and yield efficiencies are determined for the laboratory and full-scale manufacture environments. The Ecoinvent(TM) inventory database and Eco-indicator 1999(TM) method are utilized for the impact assessment. Results for the fabrication stage are reported for highest contributions to environmental impact such as airborne inorganics, land use, and fossil fuels due to Au refining processes and electricity consumption. Extension of the LCA scope is evaluated for the potential replacement of CNT switches to current field-effect transistors (FETs) in flash memory for a cellular phone application. First-order predictions are made for the functionality and performance of the CNT switch during the use stage through an

  5. Superconducting circuit fabrication

    International Nuclear Information System (INIS)

    Stein, B.F.; Young, P.L.

    1984-01-01

    An improved method of anodization of thin films for the fabrication of superconducting devices. An electrically conducting contact layer is formed over a substrate between an electrically conducting object layer and the substrate. Also, an electrically insulating layer is formed between the object layer and the contact layer. The contact layer is connected to a power supply and at least a preselected portion of the object layer is anodized to a predetermined thickness. This may include anodizing all of some preselected portions through the complete thickness of the object layer. A pattern of hardened photoresist on the object layer provides portions not protected by the pattern. When anodization of the electrically conducting object layer takes place, the resulting anodized portion is thicker than the thickness of the portion of the object layer that it replaces. The present invention further includes reducing the preselected portion of the object layer to be anodized by a predetermined amount before anodizing so that when anodization is complete, the resulting partially anodized partially conducting object layer is substantially planar. Alternatively, the thickness of the anodized preselected portions can be reduced after anodizing by a predetermined amount to cause the layer to be substantially planar. The same pattern of hardened photoresist can be used when reducing the thickness of portions of the object layer or anodized preselected portions

  6. Magnetic switch for reactor control rod. [LMFBR

    Science.gov (United States)

    Germer, J.H.

    1982-09-30

    A magnetic reed switch assembly is described for activating an electromagnetic grapple utilized to hold a control rod in position above a reactor core. In normal operation the magnetic field of a permanent magnet is short-circuited by a magnetic shunt, diverting the magnetic field away from the reed switch. The magnetic shunt is made of a material having a Curie-point at the desired release temperature. Above that temperature the material loses its ferromagnetic properties, and the magnetic path is diverted to the reed switch which closes and short-circuits the control circuit for the control rod electro-magnetic grapple which allows the control rod to drop into the reactor core for controlling the reactivity of the core.

  7. New Photonic System for Optical Packet Switching

    Directory of Open Access Journals (Sweden)

    F. Rudge Barbosa

    2003-08-01

    Full Text Available Fast optical switching (ms timebase is realized by using a RF frequency tone inserted in the optical packet that carries a digital payload. By using a highly selective RF filtering for optical packet header frequency recognition, we have obtained excellent performance in optical switching function.. The RF header is detected at optical node input, and signals the node switching control, which instantly directs the packet to a prescribed output. No electronic processing of the digital payload is performed. The optical circuit is noise-free, has very low crosstalk, and is extremely selective in header frequency detection. BER measurements for payload consistently yield figures as low as 10-12 . This system is applicable to optical metropolitan and access networks, and is fully compatible with DWDM systems.

  8. A nanoplasmonic switch based on molecular machines

    KAUST Repository

    Zheng, Yue Bing

    2009-06-01

    We aim to develop a molecular-machine-driven nanoplasmonic switch for its use in future nanophotonic integrated circuits (ICs) that have applications in optical communication, information processing, biological and chemical sensing. Experimental data show that an Au nanodisk array, coated with rotaxane molecular machines, switches its localized surface plasmon resonances (LSPR) reversibly when it is exposed to chemical oxidants and reductants. Conversely, bare Au nanodisks and disks coated with mechanically inert control compounds, do not display the same switching behavior. Along with calculations based on time-dependent density functional theory (TDDFT), these observations suggest that the nanoscale movements within surface-bound "molecular machines" can be used as the active components in plasmonic devices. ©2009 IEEE.

  9. Huge capacity optical packet switching and buffering.

    Science.gov (United States)

    Shinada, Satoshi; Furukawa, Hideaki; Wada, Naoya

    2011-12-12

    We demonstrate 2.56 Tbit/s/port dual-polarization DWDM/DQPSK variable-length optical packet (20 Gbit/s × 64 wavelengths × 2 polarizations) switching and buffering by using a 2×2 optical packet switch (OPS) system. The optical data plane of the OPS system was constructed of multi-connected electro-optical switches and fiber delay lines. The accumulated polarization dependent loss of each optical path in the data plane was less than 5 dB. This low-polarization-dependence OPS system enabled us to handle DWDM/DQPSK optical packets (1.28 Tbit/s/port) with time-varying polarization after transmission through 100 km fiber in the field. © 2011 Optical Society of America

  10. Metallic oxide switches using thick film technology

    Science.gov (United States)

    Patel, D. N.; Williams, L., Jr.

    1974-01-01

    Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

  11. Switching overvoltages in offshore wind power grids

    DEFF Research Database (Denmark)

    Arana Aristi, Ivan

    Switching transients in wind turbines, the collection grid, the export system and the external grid in offshore wind farms, during normal or abnormal operation, are the most important phenomena when conducting insulation coordination studies. However, the recommended models and methods from...... electrical systems and the topic of transients is given in Chapter 1. In Chapter 2 it is described how the component and sub-system models are developed and used from an applied point of view, where common and detail models are mentioned. In Chapter 3 results from frequency domain measurement on transformers...... and cables are presented. In Chapter 4 results from time domain measurements and simulations of switching operations in offshore wind power grids are described. Specifically, switching operations on a single wind turbine, the collection grid, the export system and the external grid measured in several real...

  12. Radio frequency-assisted fast superconducting switch

    Science.gov (United States)

    Solovyov, Vyacheslav; Li, Qiang

    2017-12-05

    A radio frequency-assisted fast superconducting switch is described. A superconductor is closely coupled to a radio frequency (RF) coil. To turn the switch "off," i.e., to induce a transition to the normal, resistive state in the superconductor, a voltage burst is applied to the RF coil. This voltage burst is sufficient to induce a current in the coupled superconductor. The combination of the induced current with any other direct current flowing through the superconductor is sufficient to exceed the critical current of the superconductor at the operating temperature, inducing a transition to the normal, resistive state. A by-pass MOSFET may be configured in parallel with the superconductor to act as a current shunt, allowing the voltage across the superconductor to drop below a certain value, at which time the superconductor undergoes a transition to the superconducting state and the switch is reset.

  13. The preparation effect in task switching: carryover of SOA.

    Science.gov (United States)

    Altmann, Erik M

    2004-01-01

    A common finding in task-switching studies is switch preparation (commonly known as the preparation effect), in which a longer interval between task cue and trial stimulus (i.e., a longer stimulus onset asynchrony, or SOA) reduces the cost of switching to a different task. Three experiments link switch preparation to within-subjects manipulations of SOA. In Experiment 1, SOA was randomized within subjects, producing switch preparation that was more pronounced when the SOA switched from the previous trial than when the SOA repeated. In Experiment 2, SOA was blocked within subjects, producing switch preparation but not on the first block of trials. In Experiment 3, SOA was manipulated between subjects with sufficient statistical power to detect switch preparation, but the effect was absent. The results favor an encoding view of cognitive control, but show that any putative switching mechanism reacts lazily when exposed to only one SOA.

  14. A new Zero-Current-Transition PWM switching cell

    Energy Technology Data Exchange (ETDEWEB)

    Grigore, V. [Electronics and Telecommunications Faculty, `Politechnica` University Bucharest (Romania); Kyyrae, J. [Helsinki University of Technology, Otaniemi (Finland): Institute of Intelligent Power Electronics

    1997-12-31

    In this paper a new Zero-Current-Transition (ZCT) PWM switching cell is presented. The proposed switching cell is composed of the normal hard-switched PWM cell (consisting of one active switch and one passive switch), plus as auxiliary circuit. The auxiliary circuit is inactive during the ON ad OFF intervals of the switches in the normal PWM switch. The transitions between the two states are controlled by the auxiliary circuit. Prior to turn-off, the current through the active switch in the PWM cell is forced to zero, thus the turn-off losses of the active switch are practically eliminated. At turn-on the auxiliary circuit slows down the growing rate of the current through the main switch. Thus, turn-on losses are also very much reduced. The active switch operates under ZCT conditions, the passive switch (diode) has a controlled reverse recovery, while the switch in the auxiliary circuit operates under Zero-Current-Switching (ZCS) conditions. (orig.) 3 refs.

  15. Ultra High-Speed Radio Frequency Switch Based on Photonics.

    Science.gov (United States)

    Ge, Jia; Fok, Mable P

    2015-11-26

    Microwave switches, or Radio Frequency (RF) switches have been intensively used in microwave systems for signal routing. Compared with the fast development of microwave and wireless systems, RF switches have been underdeveloped particularly in terms of switching speed and operating bandwidth. In this paper, we propose a photonics based RF switch that is capable of switching at tens of picoseconds speed, which is hundreds of times faster than any existing RF switch technologies. The high-speed switching property is achieved with the use of a rapidly tunable microwave photonic filter with tens of gigahertz frequency tuning speed, where the tuning mechanism is based on the ultra-fast electro-optics Pockels effect. The RF switch has a wide operation bandwidth of 12 GHz and can go up to 40 GHz, depending on the bandwidth of the modulator used in the scheme. The proposed RF switch can either work as an ON/OFF switch or a two-channel switch, tens of picoseconds switching speed is experimentally observed for both type of switches.

  16. Weight change after an atypical antipsychotic switch.

    Science.gov (United States)

    Ried, L Douglas; Renner, Bernard T; Bengtson, Michael A; Wilcox, Brian M; Acholonu, Wilfred W

    2003-10-01

    Atypical antipsychotics successfully treat schizophrenia and other conditions, with a lower incidence of extrapyramidal side effects than other agents used in treatment of these disorders. However, some atypical antipsychotics are associated with weight gain. To quantify the impact on weight and identify atypical antipsychotics causing the least amount of weight gain among patients switched from risperidone to olanzapine and olanzapine to risperidone. Patients included in the study (n = 86) were > or =18 years and had received > or =2 prescriptions for risperidone or olanzapine for > or =60 days, switched to the other atypical antipsychotic, and were dispensed > or =2 prescriptions for at least 60 days after the index date. Age, weight, and body mass index (BMI) were retrospectively abstracted from automated databases containing patient-specific prescription and vital sign information. At the time of their switch, the average patient age was 53.2 years (range 25-83). The average weight change in patients switched to olanzapine (n = 47) was +2.3 kg (p = 0.01) and the BMI change was +0.8 kg/m(2) (p = 0.02). The average percent body weight change was +2.8% and the BMI change was +3.0%. The average weight change after patients switched to risperidone (n = 39) was -0.45 kg (p = 0.69) and BMI change was -0.2 kg/m2 (p = 0.64). The average percentage weight change was -0.4% and BMI change was -0.5%. Practitioners' concern regarding weight changes after switching atypical antipsychotics seems warranted and patients should be provided consistent, ongoing weight monitoring. Further investigations should examine whether weight changes associated with atypical antipsychotic treatment further jeopardize this already at-risk population for severe comorbid conditions such as hypertension, coronary artery disease, and type 2 diabetes.

  17. Photonic Switching Devices Using Light Bullets

    Science.gov (United States)

    Goorjian, Peter M. (Inventor)

    1999-01-01

    A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

  18. Two Bistable Switches Govern M Phase Entry.

    Science.gov (United States)

    Mochida, Satoru; Rata, Scott; Hino, Hirotsugu; Nagai, Takeharu; Novák, Béla

    2016-12-19

    The abrupt and irreversible transition from interphase to M phase is essential to separate DNA replication from chromosome segregation. This transition requires the switch-like phosphorylation of hundreds of proteins by the cyclin-dependent kinase 1 (Cdk1):cyclin B (CycB) complex. Previous studies have ascribed these switch-like phosphorylations to the auto-activation of Cdk1:CycB through the removal of inhibitory phosphorylations on Cdk1-Tyr15 [1, 2]. The positive feedback in Cdk1 activation creates a bistable switch that makes mitotic commitment irreversible [2-4]. Here, we surprisingly find that Cdk1 auto-activation is dispensable for irreversible, switch-like mitotic entry due to a second mechanism, whereby Cdk1:CycB inhibits its counteracting phosphatase (PP2A:B55). We show that the PP2A:B55-inhibiting Greatwall (Gwl)-endosulfine (ENSA) pathway is both necessary and sufficient for switch-like phosphorylations of mitotic substrates. Using purified components of the Gwl-ENSA pathway in a reconstituted system, we found a sharp Cdk1 threshold for phosphorylation of a luminescent mitotic substrate. The Cdk1 threshold to induce mitotic phosphorylation is distinctly higher than the Cdk1 threshold required to maintain these phosphorylations-evidence for bistability. A combination of mathematical modeling and biochemical reconstitution show that the bistable behavior of the Gwl-ENSA pathway emerges from its mutual antagonism with PP2A:B55. Our results demonstrate that two interlinked bistable mechanisms provide a robust solution for irreversible and switch-like mitotic entry. Copyright © 2016 Elsevier Ltd. All rights reserved.

  19. Manufacturing fuel-switching capability, 1988

    Energy Technology Data Exchange (ETDEWEB)

    1991-09-01

    Historically, about one-third of all energy consumed in the United States has been used by manufacturers. About one-quarter of manufacturing energy is used as feedstocks and raw material inputs that are converted into nonenergy products; the remainder is used for its energy content. During 1988, the most recent year for which data are available, manufacturers consumed 15.5 quadrillion British thermal units (Btu) of energy to produce heat and power and to generate electricity. The manufacturing sector also has widespread capabilities to switch from one fuel to another for either economic or emergency reasons. There are numerous ways to define fuel switching. For the purposes of the Manufacturing Energy Consumption Survey (MECS), fuel switching is defined as the capability to substitute one energy source for another within 30 days with no significant modifications to the fuel-consuming equipment, while keeping production constant. Fuel-switching capability allows manufacturers substantial flexibility in choosing their mix of energy sources. The consumption of a given energy source can be maximized if all possible switching into that energy source takes place. The estimates in this report are based on data collected on the 1988 Manufacturing Energy Consumption Survey (MECS), Forms 846 (A through C). The EIA conducts this national sample survey of manufacturing energy consumption on a triennial basis. The MECS is the only comprehensive source of national-level data on energy-related information for the manufacturing industries. The MECS was first conducted in 1986 to collect data for 1985. This report presents information on the fuel-switching capabilities of manufacturers in 1988. This report is the second of a series based on the 1988 MECS. 8 figs., 31 tabs.

  20. Manufacturing fuel-switching capability, 1988

    International Nuclear Information System (INIS)

    1991-09-01

    Historically, about one-third of all energy consumed in the United States has been used by manufacturers. About one-quarter of manufacturing energy is used as feedstocks and raw material inputs that are converted into nonenergy products; the remainder is used for its energy content. During 1988, the most recent year for which data are available, manufacturers consumed 15.5 quadrillion British thermal units (Btu) of energy to produce heat and power and to generate electricity. The manufacturing sector also has widespread capabilities to switch from one fuel to another for either economic or emergency reasons. There are numerous ways to define fuel switching. For the purposes of the Manufacturing Energy Consumption Survey (MECS), fuel switching is defined as the capability to substitute one energy source for another within 30 days with no significant modifications to the fuel-consuming equipment, while keeping production constant. Fuel-switching capability allows manufacturers substantial flexibility in choosing their mix of energy sources. The consumption of a given energy source can be maximized if all possible switching into that energy source takes place. The estimates in this report are based on data collected on the 1988 Manufacturing Energy Consumption Survey (MECS), Forms 846 (A through C). The EIA conducts this national sample survey of manufacturing energy consumption on a triennial basis. The MECS is the only comprehensive source of national-level data on energy-related information for the manufacturing industries. The MECS was first conducted in 1986 to collect data for 1985. This report presents information on the fuel-switching capabilities of manufacturers in 1988. This report is the second of a series based on the 1988 MECS. 8 figs., 31 tabs

  1. Switching to a Mac For Dummies

    CERN Document Server

    Reinhold, Arnold

    2007-01-01

    Thinking of making the switch from your PC to a Mac? Congratulations! You're in for a great, virus-free ride. And Switching to Mac For Dummies makes it smoother than you ever imagined. From buying the Mac that's right for you to transferring your files to breaking your old Windows habits and learning to do things the (much easier) Mac way, it makes the whole process practically effortless. Whether you've been using Windows XP, Vista, or even Linux, you'll find simple, straightforward ways to make your transition go smoothly. That will leave you plenty of time to get familiar with Mac'

  2. The Morrison Bearingless Switched Reluctance Motor

    Science.gov (United States)

    Wong, David S.

    2004-01-01

    Switched reluctance motors typically consist of pairs of poles protruding outward from a central rotor, surrounded by pairs of coils protruding inward from a stator. The pairs of coils, positioned a short distance from opposing sides of the rotor, are connected in series. A current runs through the coils, generating a magnetic flux between the coils. This attracts the protruding poles on the rotor, and just as the poles on the rotor approach the coils, the current to the coils is inverted, repelling the rotor s poles as they pass the coils. This current switching, back and forth, provides a continuous rotational torque to the rotor. reliability, durability, low cost, and operation in adverse environments such as high temperatures, extreme temperature variations, and high rotational speeds. However, because rotors are often manufactured with minute flaws due to imperfections in the machining process, traditional switched reluctance motors often suffer from substantial amounts of vibration. In addition, the current in the coils imparts a strong radial magnetic force on the rotor; the continuous alternating of the direction of this force also causes vibration. As a result, switched reluctance motors require bearings that, run at high speeds, can require lubrication apparatus and are subject to problems with heat and wear. My mentor s recent invention, the "Bearingless" Switched Reluctance Motor, actually uses magnetic bearings instead of traditional physical bearings. Sensors are used to continuously determine the position of the rotor. A computer reads the position sensor input, performs calculations, and outputs a current to a set of extra coils (in addition to the coils rotating the rotor). This current provides a magnetic force that counters and damps the vibration. The sense-calculate-update loop iterates more than thirty thousand times per second. For now, our goal is to have the rotor rotate at about 6000 rprn, and at that speed, the magnetic bearing is

  3. Simulation of plasma erosion opening switches

    International Nuclear Information System (INIS)

    Mason, R.J.; Jones, M.E.

    1988-01-01

    Recent progress in the modeling of Plasma Erosion Opening Switches is reviewed, and new results from both fluid and particle simulation compared. Three-fluid simulations with the ANTHEM code for switches on the NRL GAMBLE I machine and SNL PBFA II machine have shown strong dependence of the opening dynamics on the anode structure, the threshold for electron emission, on the possible presence of anomalous resistivity, and on advection of the magnetic field with cathode emitted electrons. Simulations with the implicit particle-in-cell code ISIS confirm these observations, but manifest broader current channels---in better agreement with GAMBLE I experimental results. 7 refs., 3 figs

  4. Design of a Clap Activated Switch

    Directory of Open Access Journals (Sweden)

    Seyi Stephen OLOKEDE

    2008-12-01

    Full Text Available This paper presents the design of a clap activated switch device that will serve well in different phono-controlled applications, providing inexpensive key and at the same time flee from false triggering.This involves the design of various sages consisting of the pickup transducer, low frequency, audio low power and low noise amplifier, timer, bistable and switches. It also consists of special network components to prevent false triggering and ensure desired performance objectives. A decade counter IC serves the bistable function instead of flip-flop, special transistor and edge triggering network for low audio frequency.

  5. Open switching of current varying inductance

    International Nuclear Information System (INIS)

    Zubkov, P.I.; Lukyanchikov, L.A.; Ten, K.A.

    1990-01-01

    The electromotive force of induction occurs in a varying inductance of a current circuit part. It can be used to control and switch the current. The effect, occurring under the forced inductance decrease, is used widely for explosive magnetic generators to produce high currents, to store high-density energy and to generate superhigh magnetic fields. This paper gives an analysis of open switching of the currents by varying inductance in some simple electrotechnical models of circuits used in pulse power engineering to obtain high energies

  6. Switching between intravenous and subcutaneous trastuzumab

    DEFF Research Database (Denmark)

    Gligorov, Joseph; Curigliano, Giuseppe; Müller, Volkmar

    2017-01-01

    AIM: To assess the safety and tolerability of switching between subcutaneous (SC) and intravenous (IV) trastuzumab in the PrefHer study (NCT01401166). PATIENTS AND METHODS: Patients with HER2-positive early breast cancer completed (neo)adjuvant chemotherapy and were randomised to receive four....... Rates of clinically important events, including grade ≥3 AEs, serious AEs, AEs leading to study drug discontinuation and cardiac AEs, were low and similar between treatment arms (safety signals for trastuzumab were observed. CONCLUSIONS: PrefHer revealed...... that switching from IV to SC trastuzumab (hand-held syringe or SID) or vice versa did not impact the known safety profile of trastuzumab....

  7. A novel photonic crystal fibre switch

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard; Hermann, D.S.; Broeng, Jes

    2003-01-01

    A new thermo-optic fibre switch is demonstrated, which utilizes the phase transitions of a thermochromic liquid crystal inside a photonic crystal fibre. We report an extinction ratio of 60 dB and an insertion loss of 1 dB.......A new thermo-optic fibre switch is demonstrated, which utilizes the phase transitions of a thermochromic liquid crystal inside a photonic crystal fibre. We report an extinction ratio of 60 dB and an insertion loss of 1 dB....

  8. Resistance switching in silver - manganite contacts

    International Nuclear Information System (INIS)

    Gomez-Marlasca, F; Levy, P

    2009-01-01

    We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature - a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

  9. Theory of circuit block switch-off

    Directory of Open Access Journals (Sweden)

    S. Henzler

    2004-01-01

    Full Text Available Switching-off unused circuit blocks is a promising approach to supress static leakage currents in ultra deep sub-micron CMOS digital systems. Basic performance parameters of Circuit Block Switch-Off (CBSO schemes are defined and their dependence on basic circuit parameters is estimated. Therefore the design trade-off between strong leakage suppression in idle mode and adequate dynamic performance in active mode can be supported by simple analytic investigations. Additionally, a guideline for the estimation of the minimum time for which a block deactivation is useful is derived.

  10. Polarisation-insensitive strip-loaded waveguide for electro-optic modulators and switches

    Science.gov (United States)

    Sun, Jie; Chen, Changming; Gao, Lei; Sun, Xiaoqiang; Gao, Weinan; Ma, Chunsheng; Zhang, Daming

    2009-06-01

    A polarisation-insensitive electro-optic (EO) waveguide consisting of a dye-doped TiO2/SiO2 slab and a SU-8 strip-loaded rib is designed and fabricated. By optimizing the refractive index and size of waveguide, a trade-off between polarisation-insensitive condition and large EO efficiency (optical field interaction with the EO material) is obtained. The average transmission loss of the waveguide is less than 2.0 dB/cm. A Mach-Zehnder (M-Z) interferometer intensity modulator based on this waveguide with excellent poling stability is fabricated and measured, exhibiting 7 V half-wave voltage with 1.8 cm EO interaction length and 2.7 cm total length. This strip-loaded structure is proved to be a valuable application in EO modulators and switches.

  11. An overview of self-switching diode rectifiers using green materials

    Science.gov (United States)

    Kasjoo, Shahrir Rizal; Zailan, Zarimawaty; Zakaria, Nor Farhani; Isa, Muammar Mohamad; Arshad, Mohd Khairuddin Md; Taking, Sanna

    2017-09-01

    A unipolar two-terminal nanodevice, known as the self-switching diode (SSD), has recently been demonstrated as a room-temperature rectifier at microwave and terahertz frequencies due to its nonlinear current-voltage characteristic. The planar architecture of SSD not only makes the fabrication process of the device faster, simpler and at a lower cost when compared with other rectifying diodes, but also allows the use of various materials to realize and fabricate SSDs. This includes the utilization of `green' materials such as organic and graphene thin films for environmental sustainability. This paper reviews the properties of current `green' SSD rectifiers with respect to their operating frequencies and rectifying performances, including responsivity and noise-equivalent power of the devices, along with the applications.

  12. MOX fuel fabrication at AECL

    International Nuclear Information System (INIS)

    Dimayuga, F.C.; Jeffs, A.T.

    1995-01-01

    Atomic Energy of Canada Limited's mixed-oxide (MOX) fuel fabrication activities are conducted in the Recycle Fuel Fabrication Laboratories (RFFL) at the Chalk River Laboratories. The RFFL facility is designed to produce experimental quantities of CANDU MOX fuel for reactor physics tests or demonstration irradiations. From 1979 to 1987, several MOX fuel fabrication campaigns were run in the RFFL, producing various quantities of fuel with different compositions. About 150 bundles, containing over three tonnes of MOX, were fabricated in the RFFL before operations in the facility were suspended. In late 1987, the RFFL was placed in a state of active standby, a condition where no fuel fabrication activities are conducted, but the monitoring and ventilation systems in the facility are maintained. Currently, a project to rehabilitate the RFFL and resume MOX fuel fabrication is nearing completion. This project is funded by the CANDU Owners' Group (COG). The initial fabrication campaign will consist of the production of thirty-eight 37-element (U,Pu)O 2 bundles containing 0.2 wt% Pu in Heavy Element (H.E.) destined for physics tests in the zero-power ZED-2 reactor. An overview of the Rehabilitation Project will be given. (author)

  13. Adaptive synchronized switch damping on an inductor: a self-tuning switching law

    Science.gov (United States)

    Kelley, Christopher R.; Kauffman, Jeffrey L.

    2017-03-01

    Synchronized switch damping (SSD) techniques exploit low-power switching between passive circuits connected to piezoelectric material to reduce structural vibration. In the classical implementation of SSD, the piezoelectric material remains in an open circuit for the majority of the vibration cycle and switches briefly to a shunt circuit at every displacement extremum. Recent research indicates that this switch timing is only optimal for excitation exactly at resonance and points to more general optimal switch criteria based on the phase of the displacement and the system parameters. This work proposes a self-tuning approach that implements the more general optimal switch timing for synchronized switch damping on an inductor (SSDI) without needing any knowledge of the system parameters. The law involves a gradient-based search optimization that is robust to noise and uncertainties in the system. Testing of a physical implementation confirms this law successfully adapts to the frequency and parameters of the system. Overall, the adaptive SSDI controller provides better off-resonance steady-state vibration reduction than classical SSDI while matching performance at resonance.

  14. Optically triggered high voltage switch network and method for switching a high voltage

    Energy Technology Data Exchange (ETDEWEB)

    El-Sharkawi, Mohamed A. (Renton, WA); Andexler, George (Everett, WA); Silberkleit, Lee I. (Mountlake Terrace, WA)

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  15. Optically triggered high voltage switch network and method for switching a high voltage

    Science.gov (United States)

    El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  16. Fabric circuits and method of manufacturing fabric circuits

    Science.gov (United States)

    Chu, Andrew W. (Inventor); Dobbins, Justin A. (Inventor); Scully, Robert C. (Inventor); Trevino, Robert C. (Inventor); Lin, Greg Y. (Inventor); Fink, Patrick W. (Inventor)

    2011-01-01

    A flexible, fabric-based circuit comprises a non-conductive flexible layer of fabric and a conductive flexible layer of fabric adjacent thereto. A non-conductive thread, an adhesive, and/or other means may be used for attaching the conductive layer to the non-conductive layer. In some embodiments, the layers are attached by a computer-driven embroidery machine at pre-determined portions or locations in accordance with a pre-determined attachment layout before automated cutting. In some other embodiments, an automated milling machine or a computer-driven laser using a pre-designed circuit trace as a template cuts the conductive layer so as to separate an undesired portion of the conductive layer from a desired portion of the conductive layer. Additional layers of conductive fabric may be attached in some embodiments to form a multi-layer construct.

  17. Fabrication of cotton fabric with superhydrophobicity and flame retardancy.

    Science.gov (United States)

    Zhang, Ming; Wang, Chengyu

    2013-07-25

    A simple and facile method for fabricating the cotton fabric with superhydrophobicity and flame retardancy is described in the present work. The cotton fabric with the maximal WCA of 160° has been prepared by the covalent deposition of amino-silica nanospheres and the further graft with (heptadecafluoro-1,1,2,2-tetradecyl) trimethoxysilane. The geometric microstructure of silica spheres was measured by transmission electron microscopy (TEM). The cotton textiles before and after treatment were characterized by using scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). The wetting behavior of cotton samples was investigated by water contact angle measurement. Moreover, diverse performances of superhydrophobic cotton textiles have been evaluated as well. The results exhibited the outstanding superhydrophobicity, excellent waterproofing durability and flame retardancy of the cotton fabric after treatment, offering a good opportunity to accelerate the large-scale production of superhydrophobic textiles materials for new industrial applications. Copyright © 2013 Elsevier Ltd. All rights reserved.

  18. Comparison of MEMS switches and PIN diodes for switched dual tuned RF coils.

    Science.gov (United States)

    Maunder, Adam; Rao, Madhwesha; Robb, Fraser; Wild, Jim M

    2018-03-09

    To evaluate the performance of micro-electromechanical systems (MEMS) switches against PIN diodes for switching a dual-tuned RF coil between 19 F and 1 H resonant frequencies for multi-nuclear lung imaging. A four-element fixed-phase and amplitude transmit-receive RF coil was constructed to provide homogeneous excitation across the lungs, and to serve as a test system for various switching methods. The MR imaging and RF performance of the coil when switched between the 19 F and 1 H frequencies using MEMS switches, PIN diodes and hardwired configurations were compared. The performance of the coil with MEMS or PIN diode switching was comparable in terms of RF measurements, transmit efficiency and image SNR on both 19 F and 1 H nuclei. When the coil was not switched to the resonance frequency of the respective nucleus being imaged, reductions in the transmit efficiency were observed of 32% at the 19 F frequency and 12% at the 1 H frequency. The coil provides transmit field homogeneity of ±12.9% at the 1 H frequency and ±14.4% at the 19 F frequency in phantoms representing the thorax with the air space of the lungs filled with perfluoropropane gas. MEMS and PIN diodes were found to provide comparable performance in on-state configuration, while MEMS were more robust in off-state high-powered operation (>1 kW), providing higher isolation and requiring a lower DC switching voltage than is needed for reverse biasing of PIN diodes. In addition, clear benefits of switching between the 19 F and 1 H resonances were demonstrated, despite the proximity of their Larmor frequencies. © 2018 The Authors Magnetic Resonance in Medicine published by Wiley Periodicals, Inc. on behalf of International Society for Magnetic Resonance in Medicine.

  19. The nanocoherer: an electrically and mechanically resettable resistive switching device based on gold clusters assembled on paper

    Science.gov (United States)

    Minnai, Chloé; Mirigliano, Matteo; Brown, Simon A.; Milani, Paolo

    2018-03-01

    We report the realization of a resettable resistive switching device based on a nanostructured film fabricated by supersonic cluster beam deposition of gold clusters on plain paper substrates. Through the application of suitable voltage ramps, we obtain, in the same device, either a complex pattern of resistive switchings, or reproducible and stable switchings between low resistance and high resistance states, with an amplitude up to five orders of magnitude. Our device retains a state of internal resistance following the history of the applied voltage similar to that reported for memristors. The two different switching regimes in the same device are both stable, the transition between them is reversible, and it can be controlled by applying voltage ramps or by mechanical deformation of the substrate. The device behavior can be related to the formation, growth and breaking of junctions between the loosely aggregated gold clusters forming the nanostructured films. The fact that our cluster-assembled device is mechanically resettable suggests that it can be considered as the analog of the coherer: a switching device based on metallic powders used for the first radio communication system.

  20. A novel MEMS inertial switch with a reinforcing rib structure and electrostatic power assist to prolong the contact time

    Science.gov (United States)

    Li, Jian; Wang, Yan; Yang, Zhuoqing; Ding, Guifu; Zhao, Xiaolin; Wang, Hong

    2018-03-01

    The MEMS inertial switch is widely used in various industries owing to its advantage of small size, high integration, low power consumption and low costs, especially in the timing of Internet of things, such as toys, handheld devices, accessories and vibration testing. This paper provided a novel inertial switch with a reinforcing rib structure and electrostatic power assist. The designed inertial switch can reduce the complexity of the post-processing circuit and broaden its application prospect. The continuous electrostatic force can extend the contact time of the designed inertia switch before the leakage of electricity ends. The moving electrode with a reinforcing rib structure can effectively restrain the bending of the lower surface of moving electrode caused by residual stress. The array-type fixed electrode can ensure stable contact between the electrodes when the device is sensitive to external shocks. The dynamic displacement-time curve can be simulated by the COMSOL finite element simulation software. The laminated plating process is used to produce the designed inertial switch and the drop hammer acceleration monitoring system is used to test the fabricated device. The results indicate that, compared with the traditional design, the bouncing phenomenon can be prevented and extend the contact time to 336μs.

  1. Fabrication of integrated metallic MEMS devices

    DEFF Research Database (Denmark)

    Yalcinkaya, Arda Deniz; Ravnkilde, Jan Tue; Hansen, Ole

    2002-01-01

    A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators...

  2. Fabrication of nanowires and nanostructures

    DEFF Research Database (Denmark)

    Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.; Piraux, L.

    2009-01-01

    We report on different approaches that we have adopted and developed for the fabrication of nanowires and nanostructures. Methods based on template synthesis and on self organization seem to be the most promising for the fabrication of nanomaterials and nanostructures due to their easiness and low...... cost. The development of a supported nanoporous alumina template and the possibility of using this template to combine electrochemical synthesis with lithographic methods open new ways for the fabrication of complex nanostructures. The numerous advantages of the supported template and its compatibility...

  3. Automated fabrication of reactor fuel

    International Nuclear Information System (INIS)

    Nyman, D.H.; McLemore, D.R.; Bennett, D.W.; Yatabe, J.M.

    1980-01-01

    The development of Secure Automated Fabrication (SAF) methods is the goal of the United States breeder reactor program and will form the technological basis for the future breeder reactor fuel supply. A major factor in achieving this goal is the development of remotely operated fuel fabrication equipment. The unit operations are being designed for microprocessor control connected to a central control center. The program schedule is to demonstrate the feasibility of automated pellet fuel fabrication and remote maintenance techniques by the mid-1980's. Development of major ceramic unit operations and the required computer control system is currently in the engineering testing stage

  4. Fabrication of integrated metallic MEMS devices

    DEFF Research Database (Denmark)

    Yalcinkaya, Arda Deniz; Ravnkilde, Jan Tue; Hansen, Ole

    2002-01-01

    A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators are characteri......A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators...

  5. An Electron-Beam Controlled Semiconductor Switch

    Science.gov (United States)

    1989-11-01

    transport processes are linear, i.e the drift velocity is v = pE and the diffusion coeffient follows the Einstein relation D = ikBT/e where k9 denotes...357/19 SEMICONDUC OR SWITCH WIrH 3,917,943 11/1975 Auston............................. 250/211 J CATHODOLLJNE SCENT ELECTRON

  6. Microprocessor Controlled Capacitor Bank Switching System for ...

    African Journals Online (AJOL)

    In this work, analysis and development of a microprocessor controlled capacitor bank switching system for deployment in a smart distribution network was carried out. This system was implemented by the use of discreet components such as resistors, capacitors, transistor, diode, automatic voltage regulator, with the ...

  7. Isolated and soft-switched power converter

    Science.gov (United States)

    Peng, Fang Zheng; Adams, Donald Joe

    2002-01-01

    An isolated and soft-switched power converter is used for DC/DC and DC/DC/AC power conversion. The power converter includes two resonant tank circuits coupled back-to-back through an isolation transformer. Each resonant tank circuit includes a pair of resonant capacitors connected in series as a resonant leg, a pair of tank capacitors connected in series as a tank leg, and a pair of switching devices with anti-parallel clamping diodes coupled in series as resonant switches and clamping devices for the resonant leg. The power converter is well suited for DC/DC and DC/DC/AC power conversion applications in which high-voltage isolation, DC to DC voltage boost, bidirectional power flow, and a minimal number of conventional switching components are important design objectives. For example, the power converter is especially well suited to electric vehicle applications and load-side electric generation and storage systems, and other applications in which these objectives are important. The power converter may be used for many different applications, including electric vehicles, hybrid combustion/electric vehicles, fuel-cell powered vehicles with low-voltage starting, remote power sources utilizing low-voltage DC power sources, such as photovoltaics and others, electric power backup systems, and load-side electric storage and generation systems.

  8. Acceptable Channel Switching Delays for Mobile TV

    DEFF Research Database (Denmark)

    Fleury, Alexandre; Pedersen, Jakob Schou; Larsen, Lars Bo

    2011-01-01

    This paper presents a user study investigating the acceptability of channel switching delays on mobile television systems. The authors first review the previous work in the area, then propose a study design and present results from its implementation, focusing on the overall acceptability threshold...

  9. Effect of supercoiling on the λ switch

    DEFF Research Database (Denmark)

    Norregaard, Kamilla; Andersson, Magnus; Sneppen, Kim

    2014-01-01

    The lysogenic state of the λ switch is exceptionally stable, still, it is capable of responding to DNA-damage and rapidly enter the lytic state. We invented an assay where PNA mediated tethering of a plasmid allowed for single molecule investigations of the effect of supercoiling on the efficiency...

  10. Analysis of aceismatic properties of switch boards

    International Nuclear Information System (INIS)

    Tabuchi, Yoji; Nishikawa, Atsushi

    1986-01-01

    Recently, in order to limit the disaster at the time of earthquakes to the minimum, the aseismatic properties of electric facilities have been regarded as important. By the development and spread of CAE simulation and experimental modal analysis, aseismatic analysis has become feasible also in design section. Taking an example of the switch boards of rigid construction, which have been used mainly for nuclear power plants, the analysis of the aseismatic properties is explained. In the switch boards of rigid construction, the probability of causing resonance behavior due to earthquakes is decreased by making the structure rigid, thus the aseismatic properties are heightened. In the switch boards of rigid construction, the primary natural frequency is heightened usually to above 20 Hz considering earthquake movement and the response of buildings (in the range from 0.5 to 10 Hz). Since the switch boards of rigid construction can be treated as a rigid body in the examination of structural strength, generally static analysis is carried out. The dimensions and weight tend to be large for increasing the rigidity. In most cases, standard equipment can be adopted if the fixing is made strong. The modal analysis of the natural vibration, static stress analysis and time history response analysis were carried out by finite element method. Also the vibration test on a large vibration table was made. The results are reported. (Kako, I.)

  11. Bisimulation theory for switching linear systems

    NARCIS (Netherlands)

    Pola, G.; van der Schaft, Arjan; Di Benedetto, Maria D.

    2004-01-01

    A general notion of hybrid bisimulation is proposed and related to the notions of algebraic, state-space and input-output equivalences for the class of switching linear systems. An algebraic characterization of hybrid bisimulations and a procedure converging in a finite number of steps to the

  12. Noise analysis of switched integrator preamplifiers

    International Nuclear Information System (INIS)

    Sun Hongbo; Li Yulan; Zhu Weibin

    2004-01-01

    The main noise sources of switched integrator preamplifiers are discussed, and their noise performance are given combined PSpice simulation and experiments on them. Then, some practical methods on how to reduce noise of preamplifiers in two different integrator modes are provided. (authors)

  13. Disturbance Decoupling of Switched Linear Systems

    NARCIS (Netherlands)

    Yurtseven, E.; Heemels, W.P.M.H.; Camlibel, M.K.

    2010-01-01

    In this paper we consider disturbance decoupling problems for switched linear systems. We will provide necessary and sufficient conditions for three different versions of disturbance decoupling, which differ based on which signals are considered to be the disturbance. In the first version the

  14. Modeling of charge switching in ferroelectric capacitors.

    Science.gov (United States)

    Sun, Shunming; Kalkur, Thottam S

    2004-07-01

    To simulate charge switching in ferroelectric capacitors, a pair of exponential growth and decay currents is mapped to the process of polarization reversal. This is based on the fact that these exponential currents [i.e., i = I(m) e(t/tau) (t or = 0)], are completely specified by two constants I(m) and tau and each accommodates an integral charge Q = I(m) x tau. Equating this charge to the remanent spontaneous polarization allows for the modeling of switching current. For practical circuit simulations for charge switching, this modeling of switching current is simplified to an exponential decay current whose integral charge is set equal to the total reversed spontaneous polarization. This is because an exponential decay current can be conveniently implemented by charging a series resistor and capacitor (RC) circuit with a pulse-voltage source. The voltage transitions of the pulse source are associated with the polarization reversal and can be controlled with a noninverting Schmitt trigger that toggles at the positive and negative coercive voltages of a ferroelectric capacitor. The final circuit model incorporates such electrical and geometrical parameters as capacitance, remanent spontaneous polarization, coercive field, electrode area, and film thickness of a ferroelectric, thin-film capacitor.

  15. Modeling A Circuit Switched Multiprocessor Interconnect

    Science.gov (United States)

    1989-10-01

    at stages of the network nearer the memories is artificially elevated. This would tend to make the predicted values for U more pessimistic. 2. In...and by grants from the Sloan foundation and IBM. 2The design currently usam a packet-switched direct network with wormhole routing [l ] although

  16. Q-Switching in a Neodymium Laser

    Science.gov (United States)

    Holgado, Warein; Sola, Inigo J.; Jarque, Enrique Conejero; Jarabo, Sebastian; Roso, Luis

    2012-01-01

    We present a laboratory experiment for advanced undergraduate or graduate laser-related classes to study the performance of a neodymium laser. In the experiment, the student has to build the neodymium laser using an open cavity. After that, the cavity losses are modulated with an optical chopper located inside, so the Q-switching regime is…

  17. Moment switching in nanotube magnetic force probes

    NARCIS (Netherlands)

    Kirtley, J.R.; Deng, Z.; Luan, L.; Yenilmez, E.; Dai, H.; Moler, K.A.

    2007-01-01

    Magnetic images of high density vertically recorded media using metal-coated carbon nanotube tips exhibit a doubling of the spatial frequency under some conditions (Deng et al 2004 Appl. Phys. Lett. 85 6263). Here we demonstrate that this spatial frequency doubling is due to the switching of the

  18. Multiple application coded switch development report

    International Nuclear Information System (INIS)

    Bernal, E.L.; Kestly, J.D.

    1979-03-01

    The development of the Multiple Application Coded Switch (MACS) and its related controller are documented; the functional and electrical characteristics are described; the interface requirements defined, and a troubleshooting guide provided. The system was designed for the Safe Secure Trailer System used for secure transportation of nuclear material

  19. Investment in electricity networks with transmission switching

    DEFF Research Database (Denmark)

    Villumsen, Jonas Christoffer; Philpott, A.B.

    2012-01-01

    allows the solution of large problem instances. The methodology is illustrated by its application to a problem of determining the optimal investment in switching equipment and transmission capacity for an existing network. Computational tests on IEEE test networks with 73 nodes and 118 nodes confirm...

  20. Switching from Computer to Microcomputer Architecture Education

    Science.gov (United States)

    Bolanakis, Dimosthenis E.; Kotsis, Konstantinos T.; Laopoulos, Theodore

    2010-01-01

    In the last decades, the technological and scientific evolution of the computing discipline has been widely affecting research in software engineering education, which nowadays advocates more enlightened and liberal ideas. This article reviews cross-disciplinary research on a computer architecture class in consideration of its switching to…

  1. Balanced truncation for linear switched systems

    DEFF Research Database (Denmark)

    Petreczky, Mihaly; Wisniewski, Rafal; Leth, John-Josef

    2013-01-01

    In this paper, we present a theoretical analysis of the model reduction algorithm for linear switched systems from Shaker and Wisniewski (2011, 2009) and . This algorithm is a reminiscence of the balanced truncation method for linear parameter varying systems (Wood et al., 1996) [3]. Specifically...

  2. Screen captures to support switching attention.

    NARCIS (Netherlands)

    Gellevij, M.R.M.; van der Meij, Hans

    2002-01-01

    The study set out to validate the supportive role of screen captures for switching attention. Forty-two participants learned how to work with Microsoft Excel with a paper manual. There were three types of manuals: a textual manual, a visual manual with full-screen captures, and a visual manual with

  3. A Broadband Ultrathin Nonlinear Switching Metamaterial

    Directory of Open Access Journals (Sweden)

    E. Zarnousheh Farahani

    2017-05-01

    Full Text Available In this paper, an ultrathin planar nonlinear metamaterial slab is designed and simulated. Nonlinearity is provided through placing diodes in each metamaterial unit cell. The diodes are auto-biased and activated by an incident wave. The proposed structure represents a broadband switching property between two transmission and reflection states depending on the intensity of the incident wave. High permittivity values are presented creating a near zero effective impedance at low power states, around the second resonant mode of the structure unit cell; as the result, the incident wave is reflected. Increasing the incident power to the level which can activate the loaded diodes in the structure results in elimination of the resonance and consequently a drop in the permittivity values near the permeability one as well as a switch to the transmission state. A full wave as well as a nonlinear simulations are performed. An optimization method based on weed colonization is applied to the unit cell of the metamaterial slab to achieve the maximum switching bandwidth. The structure represents a 24% switching bandwidth of a 10 dB reduction in the reflection coefficient.

  4. Update of the CERN exchange switches

    CERN Multimedia

    2005-01-01

    In the context of the telephony services improvements, an update of the CERN exchange switches will be performed on Thursday 28 April from 7.00 p.m. until midnight. Disturbances or even disruptions of telephony services may occur during this intervention

  5. Switching Dynamics and the Stress Process

    Science.gov (United States)

    Cornwell, Benjamin

    2013-01-01

    This article shows how maintaining social relationships can be a daily hassle that has implications for the stress process, depending on how often individuals transition, or "switch," between various social roles and social settings throughout the day. I use nationally representative time-diary data on 7,662 respondents from the 2010 American Time…

  6. Sampled Noise in Switched Current Circuits

    DEFF Research Database (Denmark)

    Jørgensen, Ivan Herald Holger; Bogason, Gudmundur

    1997-01-01

    The understanding of noise in analog sampled data systems is vital for the design of high resolution circuitry. In this paper a general description of sampled and held noise is presented. The noise calculations are verified by measurements on an analog delay line implemented using switched...

  7. Noise Analysis of Switched-Current Circuits

    DEFF Research Database (Denmark)

    Jørgensen, Ivan Harald Holger; Bogason, Gudmundur

    1998-01-01

    The understanding of noise in analog sampled data systems is vital for the design of high resolution circuitry. In this paper a general description of sampled and held noise is presented. The noise calculations are verified by measurements on an analog delay line implemented using switched...

  8. Your Light Switch Is Your Vote

    DEFF Research Database (Denmark)

    McIlvenny, Paul

    (mediational means) the simple act of switching off the lights and the consequences of such an act; (b) the massive infrastructure of communication to synchronise the collective performance of a global ‘climate public’; (c) the discursive ‘memory work’ to archive and memorialise the hour, eg. on YouTube...

  9. Switched reluctance motor optimal geometry design

    Directory of Open Access Journals (Sweden)

    Liviu Neamt

    2010-12-01

    Full Text Available This paper deals with the Switched Reluctance Motor (SRM analysis using Finite Element Method (FEM for geometrical optimization in terms of volume ratio of torque on the rotor, the so-called specific torque. The optimization parameter is the pair: stator and rotor pole angles, which forms a crucial part of the design process.

  10. Magnetostrictive Micro Mirrors for an Optical Switch Matrix

    Directory of Open Access Journals (Sweden)

    Myeong-Woo Cho

    2007-10-01

    Full Text Available We have developed a wireless-controlled compact optical switch by siliconmicromachining techniques with DC magnetron sputtering. For the optical switchingoperation, micro mirror is designed as cantilever shape size of 5mm×800μm×50μm.TbDyFe film is sputter-deposited on the upper side of the mirror with the condition as: Argas pressure below 1.2×10-9 torr, DC input power of 180W and heating temperature of up to250°C for the wireless control of each component. Mirrors are actuated by externallyapplied magnetic fields for the micro application. Applied beam path can be changedaccording to the direction and the magnitude of applied magnetic field. Reflectivity changes,M-H curves and X-ray diffractions of sputtered mirrors are measured to determine magneto-optical, magneto-elastic properties with variation in sputtered film thickness. The deflectedangle-magnetic field characteristics of the fabricated mirror are measured.

  11. Pilling Resistance of Knitted Fabrics

    Directory of Open Access Journals (Sweden)

    Gita BUSILIENĖ

    2011-09-01

    Full Text Available Knitted fabrics with different quantity of elastane, conspicuous by high viscosity and elasticity, having one of the most important performance properties - resistance to pilling are often used in the production of high quality sportswear. During technological process imitating operating conditions, the behaviour of knitted fabrics may be changed by different industrial softeners from 12 % to 20 % of active substance, for example fatty acid condensate (Tubingal 5051 or silicone micro emulsion (Tubingal SMF. The aim of this investigation is to define the influence of fibrous composition and chemical softeners to the propensity of fuzzing and pilling of plain and plated jersey pattern knitted fabrics. The results of investigations showed that fibrous composition and thickness of materials (up to 6 % and washing as well as softening (from 33 % to 67 % change the resistance of knitted fabrics to pilling.http://dx.doi.org/10.5755/j01.ms.17.3.597

  12. Geoacoustic Physical Model Fabrication Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Fabricates three-dimensional rough surfaces (e.g., fractals, ripples) out of materials such as PVC or wax to simulate the roughness properties associated...

  13. Plasmonic components fabrication via nanoimprint

    DEFF Research Database (Denmark)

    Boltasseva, Alexandra

    2009-01-01

    A review report on nanoimprinted plasmonic components is given. The fabrication of different metal–dielectric geometries and nanostructured surfaces that support either propagating or localized surface plasmon modes is discussed. The main characteristics and advantages of the nanoimprint technology...... for the fabrication of various plasmonic structures are outlined. The discussion of plasmonic waveguiding structures focuses on planar waveguides based on metal strips embedded into a dielectric and on profiled metal surfaces. Nanoimprint-based fabrication of two-dimensional nanostructured plasmonic surfaces...... for enhanced transmission studies and sensor applications is also discussed. Throughout the report, the main fabrication schemes are described, as well as the challenges facing future manufacturing of plasmonic components for device applications....

  14. Silicone nanocomposite coatings for fabrics

    Science.gov (United States)

    Eberts, Kenneth (Inventor); Lee, Stein S. (Inventor); Singhal, Amit (Inventor); Ou, Runqing (Inventor)

    2011-01-01

    A silicone based coating for fabrics utilizing dual nanocomposite fillers providing enhanced mechanical and thermal properties to the silicone base. The first filler includes nanoclusters of polydimethylsiloxane (PDMS) and a metal oxide and a second filler of exfoliated clay nanoparticles. The coating is particularly suitable for inflatable fabrics used in several space, military, and consumer applications, including airbags, parachutes, rafts, boat sails, and inflatable shelters.

  15. Fabricating plasmonic components for nanophotonics

    DEFF Research Database (Denmark)

    Boltasseva, Alexandra; Nielsen, Rasmus Bundgaard; Jeppesen, Claus

    2009-01-01

    We report on experimental realization of different metal-dielectric structures that are used as surface plasmon polariton waveguides and as plasmonic metamaterials. Fabrication approaches based on different lithographic and deposition techniques are discussed.......We report on experimental realization of different metal-dielectric structures that are used as surface plasmon polariton waveguides and as plasmonic metamaterials. Fabrication approaches based on different lithographic and deposition techniques are discussed....

  16. Progress in switching technology for METS systems

    International Nuclear Information System (INIS)

    Honig, E.M.; Swannack, C.E.; Warren, R.W.; Whitaker, D.H.

    1977-01-01

    Three distinct sets of switching requirements have emerged from design optimization studies of large superconducting magnetic energy storage systems, such as the METS system to power the adiabatic plasma compression field in the proposed theta-pinch SFTR. Extremely low joule loss cryogenic disconnects are required between storage coils in the liquid helium environment to allow charging the coils in series over a prolonged time, then to isolate the coils for parallel fast discharging into the load. Another switch must break the current in the series charging loop and absorb the energy from the stray inductance. This action will allow the subsequent opening of the cryogenic disconnects under near zero current condition. The current now has been transferred to the many paralleled circuits, each containing a high current, high voltage interrupter. The opening and arc commutation of the interrupter starts the energy transfer into the load. The primary activities associated with cryogenic disconnect have been testing and development of contact materials, configurations, and closing forces for carrying 26 kA with a resistance less than 40 nΩ, and development of an actuating system that is both reliable and fast acting in a liquid helium environment. The charging loop switch will include a continuous duty switch and a vacuum interrupter. The continuous duty switch resistance can be an order of magnitude larger than that of the cryogenic disconnect because it does not present a refrigeration load. The HVDC interrupter must break 26 kA and withstand 60 kV during the energy transfer time of 700 μs. Testing in progress already has shown successful interruption using single vacuum interrupters up to 31 kA and 66 kV

  17. Trend Switching Processes in Financial Markets

    Science.gov (United States)

    Preis, Tobias; Stanley, H. Eugene

    For an intriguing variety of switching processes in nature, the underlying complex system abruptly changes at a specific point from one state to another in a highly discontinuous fashion. Financial market fluctuations are characterized by many abrupt switchings creating increasing trends ("bubble formation") and decreasing trends ("bubble collapse"), on time scales ranging from macroscopic bubbles persisting for hundreds of days to microscopic bubbles persisting only for very short time scales. Our analysis is based on a German DAX Future data base containing 13,991,275 transactions recorded with a time resolution of 10- 2 s. For a parallel analysis, we use a data base of all S&P500 stocks providing 2,592,531 daily closing prices. We ask whether these ubiquitous switching processes have quantifiable features independent of the time horizon studied. We find striking scale-free behavior of the volatility after each switching occurs. We interpret our findings as being consistent with time-dependent collective behavior of financial market participants. We test the possible universality of our result by performing a parallel analysis of fluctuations in transaction volume and time intervals between trades. We show that these financial market switching processes have features similar to those present in phase transitions. We find that the well-known catastrophic bubbles that occur on large time scales - such as the most recent financial crisis - are no outliers but in fact single dramatic representatives caused by the formation of upward and downward trends on time scales varying over nine orders of magnitude from the very large down to the very small.

  18. Operation of a homeostatic sleep switch.

    Science.gov (United States)

    Pimentel, Diogo; Donlea, Jeffrey M; Talbot, Clifford B; Song, Seoho M; Thurston, Alexander J F; Miesenböck, Gero

    2016-08-18

    Sleep disconnects animals from the external world, at considerable risks and costs that must be offset by a vital benefit. Insight into this mysterious benefit will come from understanding sleep homeostasis: to monitor sleep need, an internal bookkeeper must track physiological changes that are linked to the core function of sleep. In Drosophila, a crucial component of the machinery for sleep homeostasis is a cluster of neurons innervating the dorsal fan-shaped body (dFB) of the central complex. Artificial activation of these cells induces sleep, whereas reductions in excitability cause insomnia. dFB neurons in sleep-deprived flies tend to be electrically active, with high input resistances and long membrane time constants, while neurons in rested flies tend to be electrically silent. Correlative evidence thus supports the simple view that homeostatic sleep control works by switching sleep-promoting neurons between active and quiescent states. Here we demonstrate state switching by dFB neurons, identify dopamine as a neuromodulator that operates the switch, and delineate the switching mechanism. Arousing dopamine caused transient hyperpolarization of dFB neurons within tens of milliseconds and lasting excitability suppression within minutes. Both effects were transduced by Dop1R2 receptors and mediated by potassium conductances. The switch to electrical silence involved the downregulation of voltage-gated A-type currents carried by Shaker and Shab, and the upregulation of voltage-independent leak currents through a two-pore-domain potassium channel that we term Sandman. Sandman is encoded by the CG8713 gene and translocates to the plasma membrane in response to dopamine. dFB-restricted interference with the expression of Shaker or Sandman decreased or increased sleep, respectively, by slowing the repetitive discharge of dFB neurons in the ON state or blocking their entry into the OFF state. Biophysical changes in a small population of neurons are thus linked to the

  19. Interconnecting network for switching data packets and method for switching data packets

    Science.gov (United States)

    Benner, Alan Frederic; Minkenberg, Cyriel Johan Agnes; Stunkel, Craig Brian

    2010-05-25

    The interconnecting network for switching data packets, having data and flow control information, comprises a local packet switch element (S1) with local input buffers (I(1,1) . . . I(1,y)) for buffering the incoming data packets, a remote packet switch element (S2) with remote input buffers (I(2,1) . . . I(2,y)) for buffering the incoming data packets, and data lines (L) for interconnecting the local and the remote packet switch elements (S1, S2). The interconnecting network further comprises a local and a remote arbiter (A1, A2) which are connected via control lines (CL) to the input buffers (I(1,1) . . . I(1,y), I(2,1) . . . I(2,y)), and which are formed such that they can provide that the flow control information is transmitted via the data lines (L) and the control lines (CL).

  20. Fabrication of mercury target vessel

    International Nuclear Information System (INIS)

    Wakui, Takashi; Kogawa, Hiroyuki; Haga, Katsuhiro; Futakawa, Masatoshi; Hayashi, Ryoichi; Uchiyama, Naoyoshi; Okamoto, Yoshinao; Nakamura, Koji

    2010-03-01

    The construction of materials and life science experimental facility in J-PARC (Japan Proton Accelerator Complex) project had been completed and accepted pulsed proton beams with low power. Since 2003, the detailed design, fabrication and examination for the mercury target vessel as a pulsed neutron source were carried out by the vender. The mercury target vessel consists of triple-walled structure in order to prevent the leak of mercury to outside at the failure of the mercury vessel and to remove the heat of the safety hull, which covers the mercury vessel, due to the injection of the pulsed proton beams. The high fabrication accuracy is required for the mercury target vessel assembled by the welding, because there are the relationships between the mercury target vessel and other components (target trolley, target storage container, flange of helium vessel, reflector and water-cooled shield). At each fabrication step, the examinations for the mercury target vessel with multi-walled structure were required. In this report, the required specification and basic structure of parts in the mercury target vessel are described and the fabrication procedure of the mercury target vessel by the vender is reported. In the fabrication of the mercury target vessel, there were many troubles such as large deformation due to the welding and then the vender repaired and brought the mercury target vessel to completion. Furthermore, improvements for the design and fabrication of the mercury target are reported. (author)

  1. Rotor position sensor switches currents in brushless dc motors

    Science.gov (United States)

    1965-01-01

    Reluctance switch incorporated in an induction motor is used for sensing rotor position and switching armature circuits in a brushless dc motor. This device drives the solar array system of an unmanned space satellite.

  2. An optimal multiple switching problem under weak assumptions

    Directory of Open Access Journals (Sweden)

    Imen Hassairi

    2017-10-01

    Full Text Available This work studies the problem of optimal multiple switching in finite horizon, when the switching costs functions are continous and belong to class D. This problem is solved by means of the Snell envelope of processes.

  3. The landscape of isoform switches in human cancers

    DEFF Research Database (Denmark)

    Vitting-Seerup, Kristoffer; Sandelin, Albin Gustav

    2017-01-01

    developed methods for identification and visualization of isoform switches with predicted functional consequences. Using these methods, we characterized isoform switching in RNA-seq data from >5,500 cancer patients covering 12 solid cancer types. Isoform switches with potential functional consequences were...... common, affecting approximately 19% of multiple transcript genes. Among these, isoform switches leading to loss of DNA sequence encoding protein domains were more frequent than expected, particularly in pancancer switches. We identified several isoform switches as powerful biomarkers: 31 switches were...... highly predictive of patient survival independent of cancer types. Our data constitute an important resource for cancer researchers, available through interactive web tools. Moreover, our methods, available as an R package, enable systematic analysis of isoform switches from other RNA-seq datasets...

  4. Multilevel inverter switching controller using a field programmable ...

    African Journals Online (AJOL)

    Conducted simulation and measurement results verified and validated the switching controller design functionality and requirement. Keywords: multilevel inverter, switching controller; FPGA, general purpose processor (GPP);digital signal processing (DSP); IGBT; Verilog, power consumption; harmonic elimination (SHE).

  5. A solid-state dielectric elastomer switch for soft logic

    Energy Technology Data Exchange (ETDEWEB)

    Chau, Nixon [Biomimetics Laboratory, Auckland Bioengineering Institute, The University of Auckland, Level 6, 70 Symonds Street, Auckland 1010 (New Zealand); Slipher, Geoffrey A., E-mail: geoffrey.a.slipher.civ@mail.mil; Mrozek, Randy A. [U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States); O' Brien, Benjamin M. [StretchSense, Ltd., 27 Walls Rd., Penrose, Auckland 1061 (New Zealand); Anderson, Iain A. [Biomimetics Laboratory, Auckland Bioengineering Institute, The University of Auckland, Level 6, 70 Symonds Street, Auckland 1010 (New Zealand); StretchSense, Ltd., 27 Walls Rd., Penrose, Auckland 1061 (New Zealand); Department of Engineering Science, School of Engineering, The University of Auckland, Level 3, 70 Symonds Street, Auckland 1010 (New Zealand)

    2016-03-07

    In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease of manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.

  6. Generic switching of warfarin and risk of excessive anticoagulation

    DEFF Research Database (Denmark)

    Hellfritzsch, Maja; Rathe, Jette; Stage, Tore Bjerregaard

    2016-01-01

    PURPOSE: Generic switching of warfarin was recently repealed in Denmark, as adverse drug reaction (ADR) reports suggested risk of excessive anticoagulation following switches from branded to generic warfarin. We investigated this putative association in a formalized pharmacoepidemiological analys...

  7. Development of SWITCH-Hawaii model: loads and renewable resources.

    Science.gov (United States)

    2016-08-01

    This report summarizes work done to configure the SWITCH power system model using data for the Oahu power system. SWITCH is a planning model designed to choose optimal infrastructure investments for power systems over a multi-decade period. Investmen...

  8. Language attrition and code-switching among US Americans in ...

    African Journals Online (AJOL)

    switching in immigration contexts is the ... of code-switching, which is socially motivated, and language attrition, which is predominantly a psycholinguistic issue, ..... had a child no you were studying? To emphasize a point, focus, show contrast, quote.

  9. Perturbative effects on ultra-short soliton self-switching

    Indian Academy of Sciences (India)

    short soliton self-switching. AMARENDRA K SARMA. 1,∗ and AJIT KUMAR. 2. 1. Department of ... Abstract. A numerical study of ultra-short self-soliton switching along with the corre- ..... improving the presentation of our work. References.

  10. Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

    Science.gov (United States)

    Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

    2017-07-01

    Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

  11. Stability analysis of linear switching systems with time delays

    International Nuclear Information System (INIS)

    Li Ping; Zhong Shouming; Cui Jinzhong

    2009-01-01

    The issue of stability analysis of linear switching system with discrete and distributed time delays is studied in this paper. An appropriate switching rule is applied to guarantee the stability of the whole switching system. Our results use a Riccati-type Lyapunov functional under a condition on the time delay. So, switching systems with mixed delays are developed. A numerical example is given to illustrate the effectiveness of our results.

  12. Photonics in switching: enabling technologies and subsystem design

    DEFF Research Database (Denmark)

    Vlachos, K.; Raffaelli, C.; Aleksic, S.

    2009-01-01

    This paper describes recent research activities and results in the area of photonic switching carried out within the framework of the EU-funded e-Photon/ONe + network of excellence, Virtual Department on Optical Switching. Technology aspects of photonics in switching and, in particular, recent...... advances in wavelength conversion, ring resonators, and packet switching and processing subsystems are presented as the building blocks for the implementation of a high-performance router for the next-generation Internet....

  13. ITER Central Solenoid Module Fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Smith, John [General Atomics, San Diego, CA (United States)

    2016-09-23

    The fabrication of the modules for the ITER Central Solenoid (CS) has started in a dedicated production facility located in Poway, California, USA. The necessary tools have been designed, built, installed, and tested in the facility to enable the start of production. The current schedule has first module fabrication completed in 2017, followed by testing and subsequent shipment to ITER. The Central Solenoid is a key component of the ITER tokamak providing the inductive voltage to initiate and sustain the plasma current and to position and shape the plasma. The design of the CS has been a collaborative effort between the US ITER Project Office (US ITER), the international ITER Organization (IO) and General Atomics (GA). GA’s responsibility includes: completing the fabrication design, developing and qualifying the fabrication processes and tools, and then completing the fabrication of the seven 110 tonne CS modules. The modules will be shipped separately to the ITER site, and then stacked and aligned in the Assembly Hall prior to insertion in the core of the ITER tokamak. A dedicated facility in Poway, California, USA has been established by GA to complete the fabrication of the seven modules. Infrastructure improvements included thick reinforced concrete floors, a diesel generator for backup power, along with, cranes for moving the tooling within the facility. The fabrication process for a single module requires approximately 22 months followed by five months of testing, which includes preliminary electrical testing followed by high current (48.5 kA) tests at 4.7K. The production of the seven modules is completed in a parallel fashion through ten process stations. The process stations have been designed and built with most stations having completed testing and qualification for carrying out the required fabrication processes. The final qualification step for each process station is achieved by the successful production of a prototype coil. Fabrication of the first

  14. MEMS based monolithic Phased array using 3-bit Switched-line Phase Shifter

    Directory of Open Access Journals (Sweden)

    A. Karmakr

    2017-10-01

    Full Text Available This article details the design of an electronically scanning phased array antenna with proposed fabrication process steps. Structure is based upon RF micro-electromechanical system (MEMS technology. Capacitive type shunt switches have been implemented here to cater high frequency operation. The architecture, which is deigned at 30 GHz, consists of 3-bit (11.25º, 22.5º and 45º integrated Switched-line phase shifter and a linearly polarized microstrip patch antenna. Detailed design tricks of the Ka-band phase shifter is outlined here. The whole design is targeted for future monolithic integration. So, the substrate of choice is High Resistive Silicon (ρ > 8kΩ-cm, tan δ =0.01 and ϵr =11.8. The overall circuit occupies an cross-sectional area of 20 × 5 mm2. The simulated results show that the phase shifter can provide nearly 11.25º/22.5º/45º phase shifts and their combinations at the expense of 1dB average insertion loss at 30 GHz for eight combinations. Practical fabrication process flow using surface micromachining is proposed here. Critical dimensions of the phased array structure is governed by the deign rules of the standard CMOS/MEMS foundry.

  15. Quantum switching networks: Unicast and multicast

    Science.gov (United States)

    Shukla, Manish Kumar

    Quantum switching networks are analogs of classical switching networks in which classical switches are replaced by quantum switches. These networks are used to switch quantum data among a set of quantum sources and receivers. They can also be used to efficiently switch classical data, and help overcome some limitations of classical switching networks by utilizing the unique properties of quantum information systems, such as superposition and parallelism. In this thesis, we design several such networks which can be broadly put in the following three categories: (1) Quantum unicast networks : We give the design of quantum Baseline network (QBN) which is a self-routing and unicast quantum packet switch that uses the Baseline topology. The classical version of the network blocks packets internally even when there are no output contentions and each input packet is addressed to a different output. The QBN uses the principles of quantum superposition and parallelism to overcome such blocking. Also, for assignments that have multiple input packets addressed to an output, this network creates a quantum superposition of all these packets on that output, ensuring that all packets have non-zero probabilities of being observed on that output. (2) Quantum concentrators : We introduce a new network called quantum concentrator, which is a key component of our quantum multicasting network design. This concentrator is also an n x n quantum switching network, to be denoted by n-QC, and which, for any m, 1 ≤ m ≤ n, routes arbitrary quantum states on any m of its inputs to its top m outputs. This network uses O( n log n) quantum gates, and has a gate level depth of O(log2 n). We also give several variations of this network, the main ones being orderpreserving and priority quantum concentrators. (3) Quantum multicast networks: We first design a quantum multicasting network, called a generalized quantum connector (GQC) which can be used to multicast quantum information from n input

  16. 49 CFR 236.14 - Spring switch signal protection; requirements.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Spring switch signal protection; requirements. 236... Rules and Instructions: All Systems General § 236.14 Spring switch signal protection; requirements. (a... track signaled for movements in only one direction through a spring switch in automatic block signal...

  17. Level-ARCH Short Rate Models with Regime Switching

    DEFF Research Database (Denmark)

    Christiansen, Charlotte

    This paper introduces regime switching volatility into level- ARCH models for the short rates of the US, the UK, and Germany. Once regime switching and level effects are included there are no gains from including ARCH effects. It is of secondary importance exactly how the regime switching is spec...

  18. Validating an infrared thermal switch as a novel access technology

    Directory of Open Access Journals (Sweden)

    Memarian Negar

    2010-08-01

    Full Text Available Abstract Background Recently, a novel single-switch access technology based on infrared thermography was proposed. The technology exploits the temperature differences between the inside and surrounding areas of the mouth as a switch trigger, thereby allowing voluntary switch activation upon mouth opening. However, for this technology to be clinically viable, it must be validated against a gold standard switch, such as a chin switch, that taps into the same voluntary motion. Methods In this study, we report an experiment designed to gauge the concurrent validity of the infrared thermal switch. Ten able-bodied adults participated in a series of 3 test sessions where they simultaneously used both an infrared thermal and conventional chin switch to perform multiple trials of a number identification task with visual, auditory and audiovisual stimuli. Participants also provided qualitative feedback about switch use. User performance with the two switches was quantified using an efficiency measure based on mutual information. Results User performance (p = 0.16 and response time (p = 0.25 with the infrared thermal switch were comparable to those of the gold standard. Users reported preference for the infrared thermal switch given its non-contact nature and robustness to changes in user posture. Conclusions Thermal infrared access technology appears to be a valid single switch alternative for individuals with disabilities who retain voluntary mouth opening and closing.

  19. Switch-On Effectiveness Trial: Evaluation Report and Executive Summary

    Science.gov (United States)

    Patel, Rakhee; Jabin, Nico; Bussard, Loraine; Cartagena, Javiera; Haywood, Sarah; Lumpkin, Michael

    2017-01-01

    Switch-on is an intensive, targeted literacy intervention that aims to improve the reading skills of pupils who are struggling with literacy. There are two versions of the intervention: Switch-on Reading and Switch-on Reading and Writing. Both involve specially trained Teaching Assistants (TAs) delivering a tailored programme of literacy support…

  20. Aschroft Pressure Switch - Monitor for Low SCHe Supply Bottle Pressure

    International Nuclear Information System (INIS)

    VAN KATWIJK, C.

    2000-01-01

    These pressure switches are located in the SCHe helium supply lines at the pressure bottles and upstream of the PRV. The switches monitor the SCHe supply bottle pressure and are set to alarm at 2200 psig. There is one switch for each SCHe supply (4). Electronic output signal is NON-SAFETY (GS)