Penta-P2X (X=C, Si) monolayers as wide-bandgap semiconductors: A first principles prediction

Science.gov (United States)

Naseri, Mosayeb; Lin, Shiru; Jalilian, Jaafar; Gu, Jinxing; Chen, Zhongfang

2018-06-01

By means of density functional theory computations, we predicted two novel two-dimensional (2D) nanomaterials, namely P2X (X=C, Si) monolayers with pentagonal configurations. Their structures, stabilities, intrinsic electronic, and optical properties as well as the effect of external strain to the electronic properties have been systematically examined. Our computations showed that these P2C and P2Si monolayers have rather high thermodynamic, kinetic, and thermal stabilities, and are indirect semiconductors with wide bandgaps (2.76 eV and 2.69 eV, respectively) which can be tuned by an external strain. These monolayers exhibit high absorptions in the UV region, but behave as almost transparent layers for visible light in the electromagnetic spectrum. Their high stabilities and exceptional electronic and optical properties suggest them as promising candidates for future applications in UV-light shielding and antireflection layers in solar cells.

Three-photon excited PL spectroscopy and photo-generated Frenkel defects in wide-bandgap layered CdI2 semiconductors

International Nuclear Information System (INIS)

Miah, M. Idrish

2009-01-01

We performed a three-photon excitation nonlinear photoluminescence (PL) spectroscopy in single crystals of wide-bandgap semiconductors (WBSs). The crystal temperature (T L )-dependent PL emission intensity (I PL ) excited with different excitation power density (P) was measured. The PL emissions showed characteristics I PL with their maxima at around 520 nm. The I PL might be due to the presence of the photo-generated Frenkel defects (FDs) in WBSs. A detailed analysis of the PL spectra showed a third-order power law dependence of the maximum I PL on P for all the crystal temperature T L . The I PL was found to increase with decreasing T L . The results demonstrated the existence of the self-trapped excitons resulting from the presence of the FDs in the crystals.

Widely bandgap tunable amorphous Cd–Ga–O oxide semiconductors exhibiting electron mobilities ≥10 cm{sup 2 }V{sup −1 }s{sup −1}

Energy Technology Data Exchange (ETDEWEB)

Yanagi, Hiroshi, E-mail: hyanagi@yamanashi.ac.jp [Graduate Faculty of Interdisciplinary Research, University of Yamanashi, 4-4-37 Takeda, Kofu, Yamanashi 400-8510 (Japan); Sato, Chiyuki; Kimura, Yota [Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu, Yamanashi 400-8510 (Japan); Suzuki, Issei; Omata, Takahisa [Division of Material and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox S2-16, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox S2-16, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-16, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

2015-02-23

Amorphous oxide semiconductors exhibit large electron mobilities; however, their bandgaps are either too large for solar cells or too small for deep ultraviolet applications depending on the materials system. Herein, we demonstrate that amorphous Cd–Ga–O semiconductors display bandgaps covering the entire 2.5–4.3 eV region while maintaining large electron mobilities ≥10 cm{sup 2 }V{sup −1 }s{sup −1}. The band alignment diagram obtained by ultraviolet photoemission spectroscopy and the bandgap values reveal that these semiconductors form type-II heterojunctions with p-type Cu{sub 2}O, which is suitable for solar cells and solar-blind ultraviolet sensors.

Semiconductor Metal-Organic Frameworks: Future Low-Bandgap Materials.

Science.gov (United States)

Usman, Muhammad; Mendiratta, Shruti; Lu, Kuang-Lieh

2017-02-01

Metal-organic frameworks (MOFs) with low density, high porosity, and easy tunability of functionality and structural properties, represent potential candidates for use as semiconductor materials. The rapid development of the semiconductor industry and the continuous miniaturization of feature sizes of integrated circuits toward the nanometer (nm) scale require novel semiconductor materials instead of traditional materials like silicon, germanium, and gallium arsenide etc. MOFs with advantageous properties of both the inorganic and the organic components promise to serve as the next generation of semiconductor materials for the microelectronics industry with the potential to be extremely stable, cheap, and mechanically flexible. Here, a perspective of recent research is provided, regarding the semiconducting properties of MOFs, bandgap studies, and their potential in microelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Epitaxial growth of 100-μm thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al{sub 2}O{sub 3} substrates

Energy Technology Data Exchange (ETDEWEB)

Hu, Bolin; Su, Zhijuan; Bennett, Steve; Chen, Yajie, E-mail: y.chen@neu.edu; Harris, Vincent G. [Center for Microwave Magnetic Materials and Integrated Circuits and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

2014-05-07

Thick barium hexaferrite BaFe{sub 12}O{sub 19} (BaM) films having thicknesses of ∼100 μm were epitaxially grown on GaN/Al{sub 2}O{sub 3} substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 4.6 ± 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ∼100 Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simple powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.

Three-photon excited PL spectroscopy and photo-generated Frenkel defects in wide-bandgap layered CdI{sub 2} semiconductors

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish, E-mail: m.miah@griffith.edu.a [Qeensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)] [School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)] [Department of Physics, University of Chittagong, Chittagong-4331 (Bangladesh)

2009-12-14

We performed a three-photon excitation nonlinear photoluminescence (PL) spectroscopy in single crystals of wide-bandgap semiconductors (WBSs). The crystal temperature (T{sub L})-dependent PL emission intensity (I{sub PL}) excited with different excitation power density (P) was measured. The PL emissions showed characteristics I{sub PL} with their maxima at around 520 nm. The I{sub PL} might be due to the presence of the photo-generated Frenkel defects (FDs) in WBSs. A detailed analysis of the PL spectra showed a third-order power law dependence of the maximum I{sub PL} on P for all the crystal temperature T{sub L}. The I{sub PL} was found to increase with decreasing T{sub L}. The results demonstrated the existence of the self-trapped excitons resulting from the presence of the FDs in the crystals.

Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions.

Science.gov (United States)

Tang, Janika; Thakore, Vaibhav; Ala-Nissila, Tapio

2017-07-18

Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tailor its infrared reflectance for minimizing thermal losses from radiative transfer. To this end, we compute the spectral properties of the microcomposites using Monte Carlo modeling and compare them with results from Fresnel equations. The role of particle size-dependent Mie scattering and absorption efficiencies, and, scattering anisotropy are studied to identify the optimal microinclusion size and material parameters for maximizing the reflectance of the thermal radiation. For composites with Si and Ge microinclusions we obtain reflectance efficiencies of 57-65% for the incident blackbody radiation from sources at temperatures in the range 400-1600 °C. Furthermore, we observe a broadbanding of the reflectance spectra from the plasmonic resonances due to charge carriers generated from defect states within the semiconductor bandgap. Our results thus open up the possibility of developing efficient high-temperature thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating dielectrics.

Wide Bandgap Semiconductor Opportunities in Power Electronics

Energy Technology Data Exchange (ETDEWEB)

Das, Sujit [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Marlino, Laura D. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Armstrong, Kristina O. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2018-01-01

The report objective is to explore the Wide Bandgap (WBG) Power Electronics (PE) market, applications, and potential energy savings in order to identify key areas where further resources and investments of the U.S. Department of Energy’s Office of Energy Efficiency and Renewable Energy (DOE EERE) would have the most impact on U.S. competiveness. After considering the current market, several potential near-term application areas were identified as having significant market and energy savings potential with respect to clean energy applications: (1) data centers (uninterruptible power supplies and server power supplies); (2) renewable energy generation (photovoltaic-solar and wind); (3) motor drives (industrial, commercial and residential); (4) rail traction; and, (5) hybrid and electric vehicles (traction and charging). After the initial explorative analyses, it became clear that, SiC, not GaN, would be the principal WBG power device material for the chosen markets in the near future. Therefore, while GaN is discussed when appropriate, this report focuses on SiC devices, other WBG applications (e.g., solid-state transformers, combined heat and power, medical, and wireless power), the GaN market, and GaN specific applications (e.g., LiDAR, 5G) will be explored at a later date. In addition to the market, supply and value chain analyses addressed in Section 1 of this report, a SWOT (Strength, Weakness, Opportunity, Threat) analysis and potential energy savings analysis was conducted for each application area to identify the major potential WBG application area(s) with a U.S. competitiveness opportunity in the future.

Automating Energy Bandgap Measurements in Semiconductors Using LabVIEW

Science.gov (United States)

Garg, Amit; Sharma, Reena; Dhingra, Vishal

2010-01-01

In this paper, we report the development of an automated system for energy bandgap and resistivity measurement of a semiconductor sample using Four-Probe method for use in the undergraduate laboratory of Physics and Electronics students. The automated data acquisition and analysis system has been developed using National Instruments USB-6008 DAQ…

Optical studies of wide bandgap semiconductor epilayers and quantum well structures

International Nuclear Information System (INIS)

May, L.

1998-09-01

This thesis contains research on the optical properties of wide bandgap semiconductors, which are potentially useful for blue and UV emitters. The research covers materials from both the II-VI and III-V groups. In Chapter 1, a general introduction to the topic of blue and UV emitters is presented. The properties required of materials used for these applications are outlined, and the technological significance of these devices is discussed, in order to place this work into context. In Chapter 2, the main experimental techniques used in this work are outlined. These are photoluminescence spectroscopy (PL), photoluminescence excitation spectroscopy (PLE) and white light reflectivity. Chapter 3 begins with a discussion of the properties of ZnS. Then, following a brief outline of the sample growth technique, the optical studies of a series of ZnS single epitaxial layers are presented. The samples were characterised by photoluminescence spectroscopy, and the effect of strain on their properties studied in some detail. The results of tellurium and nitrogen doping studies are also presented. The chapter concludes with a study of ZnCdS epilayers. Chapter 4 begins with the growth and PL characterisation of a series of ZnS/ZnCdS multiple quantum well structures. Optically pumped stimulated emission experiments were then carried out on selected MQW samples. The results of these experiments are presented in the latter part of Chapter 4, followed by a discussion of the lasing mechanisms in II-VI quantum well structures. In Chapter 5, the growth and characterisation of a series of GaN epilayers are described. After an introduction outlining some of the key properties of GaN, the MOCVD growth procedure is described. Studies of the samples by PL, PLE and reflectivity are then presented. Finally, a study of p-type GaN epilayers is presented, and excimer laser annealing is investigated as a possible means of activating the dopant

Wide bandgap collector III-V double heterojunction bipolar transistors

International Nuclear Information System (INIS)

Flitcroft, R.M.

2000-10-01

This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the intrinsic gain of the devices to extract impact ionisation coefficients over a range of electric fields beyond the scope of conventional optical injection techniques. This data has enabled the study of ''dead space'' effects in HBT collectors and have been used to develop an analytical model of impact ionisation which has been incorporated into an existing Ebers-Moll HBT simulator. This simulator has been shown to accurately reproduce current-voltage characteristics in both the devices used in this work and for external clients. (author)

Electrically pumped edge-emitting photonic bandgap semiconductor laser

Science.gov (United States)

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Radiation resistance of wide-bandgap semiconductor power transistors

Energy Technology Data Exchange (ETDEWEB)

Hazdra, Pavel; Popelka, Stanislav [Department of Microelectronics, Czech Technical University in Prague (Czech Republic)

2017-04-15

Radiation resistance of state-of-the-art commercial wide-bandgap power transistors, 1700 V 4H-SiC power MOSFETs and 200 V GaN HEMTs, to the total ionization dose was investigated. Transistors were irradiated with 4.5 MeV electrons with doses up to 2000 kGy. Electrical characteristics and introduced defects were characterized by current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) measurements. Results show that already low doses of 4.5 MeV electrons (>1 kGy) cause a significant decrease in threshold voltage of SiC MOSFETs due to embedding of the positive charge into the gate oxide. On the other hand, other parameters like the ON-state resistance are nearly unchanged up to the dose of 20 kGy. At 200 kGy, the threshold voltage returns back close to its original value, however, the ON-state resistance increases and transconductance is lowered. This effect is caused by radiation defects introduced into the low-doped drift region which decrease electron concentration and mobility. GaN HEMTs exhibit significantly higher radiation resistance. They keep within the datasheet specification up to doses of 2000 kGy. Absence of dielectric layer beneath the gate and high concentration of carriers in the two dimensional electron gas channel are the reasons of higher radiation resistance of GaN HEMTs. Their degradation then occurs at much higher doses due to electron mobility degradation. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Photo-Detection on Narrow-Bandgap High-Mobility 2D Semiconductors

Science.gov (United States)

Charnas, Adam; Qiu, Gang; Deng, Yexin; Wang, Yixiu; Du, Yuchen; Yang, Lingming; Wu, Wenzhuo; Ye, Peide

Photo-detection and energy harvesting device concepts have been demonstrated widely in 2D materials such as graphene, TMDs, and black phosphorus. In this work, we demonstrate anisotropic photo-detection achieved using devices fabricated from hydrothermally grown narrow-bandgap high-mobility 2D semiconductor. Back-gated FETs were fabricated by transferring the 2D flakes onto a Si/SiO2 substrate and depositing various metal contacts across the flakes to optimize the access resistance for optoelectronic devices. Photo-responsivity was measured and mapped by slightly biasing the devices and shining a laser spot at different locations of the device to observe and map the resulting photo-generated current. Optimization of the Schottky barrier height for both n and p at the metal-2D interfaces using asymmetric contact engineering was performed to improve device performance.

II-VI Narrow-Bandgap Semiconductors for Optoelectronics

Science.gov (United States)

Baker, Ian

The field of narrow-gap II-VI materials is dominated by the compound semiconductor mercury cadmium telluride, (Hg1-x Cd x Te or MCT), which supports a large industry in infrared detectors, cameras and infrared systems. It is probably true to say that HgCdTe is the third most studied semiconductor after silicon and gallium arsenide. Hg1-x Cd x Te is the material most widely used in high-performance infrared detectors at present. By changing the composition x the spectral response of the detector can be made to cover the range from 1 μm to beyond 17 μm. The advantages of this system arise from a number of features, notably: close lattice matching, high optical absorption coefficient, low carrier generation rate, high electron mobility and readily available doping techniques. These advantages mean that very sensitive infrared detectors can be produced at relatively high operating temperatures. Hg1-x Cd x Te multilayers can be readily grown in vapor-phase epitaxial processes. This provides the device engineer with complex doping and composition profiles that can be used to further enhance the electro-optic performance, leading to low-cost, large-area detectors in the future. The main purpose of this chapter is to describe the applications, device physics and technology of II-VI narrow-bandgap devices, focusing on HgCdTe but also including Hg1-x Mn x Te and Hg1-x Zn x Te. It concludes with a review of the research and development programs into third-generation infrared detector technology (so-called GEN III detectors) being performed in centers around the world.

Processing of nanocrystalline diamond thin films for thermal management of wide-bandgap semiconductor power electronics

International Nuclear Information System (INIS)

Govindaraju, N.; Singh, R.N.

2011-01-01

Highlights: → Studied effect of nanocrystalline diamond (NCD) deposition on device metallization. → Deposited NCD on to top of High Electron Mobility Transistors (HEMTs) and Si devices. → Temperatures below 290 deg. C for Si devices and 320 deg. C for HEMTs prevent metal damage. → Development of novel NCD-based thermal management for power electronics feasible. - Abstract: High current densities in wide-bandgap semiconductor electronics operating at high power levels results in significant self-heating of devices, which necessitates the development thermal management technologies to effectively dissipate the generated heat. This paper lays the foundation for the development of such technology by ascertaining process conditions for depositing nanocrystalline diamond (NCD) on AlGaN/GaN High Electron Mobility Transistors (HEMTs) with no visible damage to device metallization. NCD deposition is carried out on Si and GaN HEMTs with Au/Ni metallization. Raman spectroscopy, optical and scanning electron microscopy are used to evaluate the quality of the deposited NCD films. Si device metallization is used as a test bed for developing process conditions for NCD deposition on AlGaN/GaN HEMTs. Results indicate that no visible damage occurs to the device metallization for deposition conditions below 290 deg. C for Si devices and below 320 deg. C for the AlGaN/GaN HEMTs. Possible mechanisms for metallization damage above the deposition temperature are enumerated. Electrical testing of the AlGaN/GaN HEMTs indicates that it is indeed possible to deposit NCD on GaN-based devices with no significant degradation in device performance.

Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

Science.gov (United States)

Kojima, Eiji; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Hosoi, Takuji; Watanabe, Heiji; Shiraishi, Kenji

2018-06-01

We performed first-principle calculations to investigate the effect of incorporation of N atoms into Al2O3 gate dielectrics. Our calculations show that the defect levels generated by VO in Al2O3 are the origin of the stress-induced gate leakage current and that VOVAl complexes in Al2O3 cause negative fixed charge. We revealed that the incorporation of N atoms into Al2O3 eliminates the VO defect levels, reducing the stress-induced gate leakage current. Moreover, this suppresses the formation of negatively charged VOVAl complexes. Therefore, AlON can reduce both stress-induced gate leakage current and negative fixed charge in wide-bandgap-semiconductor MOSFETs.

Plasma Reflection in Multigrain Layers of Narrow-Bandgap Semiconductors

Science.gov (United States)

Zhukov, N. D.; Shishkin, M. I.; Rokakh, A. G.

2018-04-01

Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15-25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ˜7 μm) is characterized by an absorption band at 2.1-2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50-70 nm) exhibited absorption maxima at 7, 10, and 17 μm, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.

Doping of wide-bandgap titanium-dioxide nanotubes: optical, electronic and magnetic properties

Science.gov (United States)

Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Cerkovnik, Logan Jerome; Nagpal, Prashant

2014-08-01

Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications.Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr02417f

Ohmic metallization technology for wide band-gap semiconductors

International Nuclear Information System (INIS)

Iliadis, A.A.; Vispute, R.D.; Venkatesan, T.; Jones, K.A.

2002-01-01

Ohmic contact metallizations on p-type 6H-SiC and n-type ZnO using a novel approach of focused ion beam (FIB) surface-modification and direct-write metal deposition will be reviewed, and the properties of such focused ion beam assisted non-annealed contacts will be reported. The process uses a Ga focused ion beam to modify the surface of the semiconductor with different doses, and then introduces an organometallic compound in the Ga ion beam, to effect the direct-write deposition of a metal on the modified surface. Contact resistance measurements by the transmission line method produced values in the low 10 -4 Ω cm 2 range for surface-modified and direct-write Pt and W non-annealed contacts, and mid 10 -5 Ω cm 2 range for surface-modified and pulse laser deposited TiN contacts. An optimum Ga surface-modification dosage window is determined, within which the current transport mechanism of these contacts was found to proceed mainly by tunneling through the metal-modified-semiconductor interface layer

Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors

Science.gov (United States)

Dang Chien, Nguyen; Shih, Chun-Hsing; Hoa, Phu Chi; Minh, Nguyen Hong; Thi Thanh Hien, Duong; Nhung, Le Hong

2016-06-01

The two-band Kane model has been popularly used to calculate the band-to-band tunneling (BTBT) current in tunnel field-effect transistor (TFET) which is currently considered as a promising candidate for low power applications. This study theoretically clarifies the maximum electric field approximation (MEFA) of direct BTBT Kane model and evaluates its appropriateness for low bandgap semiconductors. By analysing the physical origin of each electric field term in the Kane model, it has been elucidated in the MEFA that the local electric field term must be remained while the nonlocal electric field terms are assigned by the maximum value of electric field at the tunnel junction. Mathematical investigations have showed that the MEFA is more appropriate for low bandgap semiconductors compared to high bandgap materials because of enhanced tunneling probability in low field regions. The appropriateness of the MEFA is very useful for practical uses in quickly estimating the direct BTBT current in low bandgap TFET devices.

Recent Advances in Wide-Bandgap Photovoltaic Polymers.

Science.gov (United States)

Cai, Yunhao; Huo, Lijun; Sun, Yanming

2017-06-01

The past decade has witnessed significant advances in the field of organic solar cells (OSCs). Ongoing improvements in the power conversion efficiency of OSCs have been achieved, which were mainly attributed to the design and synthesis of novel conjugated polymers with different architectures and functional moieties. Among various conjugated polymers, the development of wide-bandgap (WBG) polymers has received less attention than that of low-bandgap and medium-bandgap polymers. Here, we briefly summarize recent advances in WBG polymers and their applications in organic photovoltaic (PV) devices, such as tandem, ternary, and non-fullerene solar cells. Addtionally, we also dissuss the application of high open-circuit voltage tandem solar cells in PV-driven electrochemical water dissociation. We mainly focus on the molecular design strategies, the structure-property correlations, and the photovoltaic performance of these WBG polymers. Finally, we extract empirical regularities and provide invigorating perspectives on the future development of WBG photovoltaic materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Spectroscopic studies on novel donor-acceptor and low band-gap polymeric semiconductors

International Nuclear Information System (INIS)

Cravino, A.

2002-11-01

Novel low band-gap conjugated polymeric semiconductors as well as conjugated electron donor chains carrying electron acceptor substituents were electrochemically prepared and investigated by means of different spectroscopic techniques. Using in situ FTIR and ESR spectroelectrochemistry, the spectroscopic features of injected positive charges are found to be different as opposed to the negative charge carriers on the same conjugated polymer. These results, for which the theoretical models so far developed do not account, demonstrate the different structure and delocalization of charge carriers with opposite signs. In addition, vibrational spectroscopy results proof the enhanced 'quinoid' character of low band-gap conjugated chains. Excited state spectroscopy was applied to study photoexcitations in conjugated polymers carrying tetracyanoanthraquinone type or fullerene moieties. This novel class of materials, hereafter called double-cable polymers, was found promising as alternative to the conjugated polymer:fullerene mixtures currently used for the preparation of 'bulk-heterojunction' polymeric solar cells. (author)

Advances in wide bandgap SiC for optoelectronics

DEFF Research Database (Denmark)

Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

2014-01-01

Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication...

Optical bandgap of semiconductor nanostructures: Methods for experimental data analysis

Science.gov (United States)

Raciti, R.; Bahariqushchi, R.; Summonte, C.; Aydinli, A.; Terrasi, A.; Mirabella, S.

2017-06-01

Determination of the optical bandgap (Eg) in semiconductor nanostructures is a key issue in understanding the extent of quantum confinement effects (QCE) on electronic properties and it usually involves some analytical approximation in experimental data reduction and modeling of the light absorption processes. Here, we compare some of the analytical procedures frequently used to evaluate the optical bandgap from reflectance (R) and transmittance (T) spectra. Ge quantum wells and quantum dots embedded in SiO2 were produced by plasma enhanced chemical vapor deposition, and light absorption was characterized by UV-Vis/NIR spectrophotometry. R&T elaboration to extract the absorption spectra was conducted by two approximated methods (single or double pass approximation, single pass analysis, and double pass analysis, respectively) followed by Eg evaluation through linear fit of Tauc or Cody plots. Direct fitting of R&T spectra through a Tauc-Lorentz oscillator model is used as comparison. Methods and data are discussed also in terms of the light absorption process in the presence of QCE. The reported data show that, despite the approximation, the DPA approach joined with Tauc plot gives reliable results, with clear advantages in terms of computational efforts and understanding of QCE.

Wide-bandgap epitaxial heterojunction windows for silicon solar cells

Science.gov (United States)

Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland; Sekula-Moise, Patricia A.; Vernon, Stanley M.

1990-01-01

It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

Design and performance study of a DC-DC flyback converter based on wide bandgap power devices for photovoltaic applications

Science.gov (United States)

Alharbi, Salah S.; Alharbi, Saleh S.; Al-bayati, Ali M. S.; Matin, Mohammad

2017-08-01

This paper presents a high-performance dc-dc flyback converter design based on wide bandgap (WBG) semiconductor devices for photovoltaic (PV) applications. Two different power devices, a gallium nitride (GaN)-transistor and a silicon (Si)-MOSFET, are implemented individually in the flyback converter to examine their impact on converter performance. The total power loss of the converter with different power devices is analyzed for various switching frequencies. Converter efficiency is evaluated at different switching frequencies, input voltages, and output power levels. The results reveal that the converter with the GaN-transistor has lower total power loss and better efficiency compared to the converter with the conventional Si-MOSFET.

Detection of the scintillation light emitted from direct-bandgap compound semiconductors by a Si avalanche photodiode at 150 mK

International Nuclear Information System (INIS)

Yasumune, Takashi; Takayama, Nobuyasu; Maehata, Keisuke; Ishibashi, Kenji; Umeno, Takahiro

2008-01-01

In this work, the direct-bandgap compound semiconductor materials are irradiated by α particles emitted from 241 Am for the detection of scintillation light at the temperature of 150 mK. For the irradiation experiment, two disk shaped samples were fabricated from an epoxy resin mixed with the powder of PbI 2 and CuI, respectively. Each disk-samples was cooled down to 150 mK by a compact liquid helium-free dilution refrigerator. A Si avalanche photodiode (APD) was employed for detecting the scintillation light emitted from the disk-sample inside the refrigerator. The detection signal current of Si APD was converted into the voltage pulses by a charge sensitive preamplifier. The voltage pulses of the scintillation light emitted from the direct-bandgap semiconductors were observed at the temperature of 150 mK. (author)

Optical investigations on the wide bandgap semiconductors diamond and aluminum nitride

Energy Technology Data Exchange (ETDEWEB)

Teofilov, Nikolai

2007-07-01

In the context of this thesis, new results about optical defects and intrinsic properties of diamond, AlN and AlGaN alloys have been obtained. The main experimental techniques used were low temperature cathodoluminescence and photoluminescence spectroscopy. First, different aspects of intentional and background doping of diamond were discussed. Thus, the most commonly observed green luminescence emission from boron doped HPHT diamonds has been studied by means of temperature dependent CL in a wide temperature range from 10 K to 450 K. One further subject, addressing deep defect nitrogen related luminescence was a study of nitrogen addition in combustion flame grown CVD diamond layers. Two further topics concern intrinsic excitations in diamond, free excitons and electron-hole drops. Several important parameters like the critical density, the critical temperature, and the low-temperature density inside the drops were evaluated. The ground state density of the electron-hole condensate in diamond is about {approx} 42 times larger than that in Si, and the critical temperature takes very high values in the range of 165K.. 173K. Cathodoluminescence investigations on epitaxial wurtzite AlN layers grown on sapphire, SiC, and Si substrates, have shown that although the material is generally of good optical quality, deep level luminescence are still dominating the spectra. Relatively sharp near-band-edge transitions have been observed in all three samples that exhibit significantly reduced line widths for the AlN/sapphire and the AlN/SiC samples. Much broader emission lines in the near band-gap region have been observed for the first time from the AlN sample grown on Si (111) substrate. Temperature dependent CL measurements and numerical line decompositions reveal complicated substructures in the excitonic lines. The temperature dependence of the energy positions and broadening parameters of the transition have been studied and compared with the other materials. Epitaxial Al

Contact and Bandgap Engineering in Two Dimensional Crystal

Science.gov (United States)

Chu, Tao

At the heart of semiconductor research, bandgap is one of the key parameters for materials and determine their applications in modern technologies. For traditional bulk semiconductors, the bandgap is determined by the chemical composition and specific arrangement of the crystal lattices, and usually invariant during the device operation. Nevertheless, it is highly desirable for many optoelectronic and electronic applications to have materials with continuously tunable bandgap available. In the past decade, 2D layered materials including graphene and transition metal dichalcogenides (TMDs) have sparked interest in the scientific community, owing to their unique material properties and tremendous potential in various applications. Among many newly discovered properties that are non-existent in bulk materials, the strong in-plane bonding and weak van der Waals inter-planar interaction in these 2D layered structures leads to a widely tunable bandgap by electric field. This provides an extra knob to engineer the fundamental material properties and open a new design space for novel device operation. This thesis focuses on this field controlled dynamic bandgap and can be divided into three parts: (1) bilayer graphene is the first known 2D crystal with a bandgap can be continuously tuned by electric field. However, the electrical transport bandgaps is much smaller than both theoretical predictions and extracted bandgaps from optical measurements. In the first part of the thesis, the limiting factors of preventing achieving a large transport bandgap in bilayer graphene are investigated and different strategies to achieve a large transport bandgap are discussed, including the vertically scaling of gate oxide and patterning channel into ribbon structure. With a record large transport bandgap of ~200meV, a dual-gated semiconducting bilayer graphene P/N junction with extremely scaled gap of 20nm in-between is fabricated. A tunable local maxima feature, associated with 1D v

Wide gap semiconductor microwave devices

International Nuclear Information System (INIS)

Buniatyan, V V; Aroutiounian, V M

2007-01-01

A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed. (review article)

Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

Science.gov (United States)

Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

2018-04-01

To analyze the open-circuit voltage (V oc) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0, and the temperature coefficient C of the solar cells. Our results show that, while the C of InP QD solar cells is slightly larger than that of the reference InGaP solar cells, V 0 significantly decreases and coincides with the bandgap energy of the InP QDs rather than that of the InGaP host. This V 0 indicates that the V oc reduction in the InP QD solar cells is primarily caused by the breaking of the Fermi energy separation between the QDs and the host semiconductor in intermediate-band solar cells, rather than by enhanced carrier recombination.

Understanding Electrically Active Interface Formation on Wide Bandgap Semiconductors through Molecular Beam Epitaxy Using Fe3O 4 for Spintronics as a Base Case

Science.gov (United States)

Hamedani Golshan, Negar

Nanoelectronics, complex heterostructures, and engineered 3D matrix materials are quickly advancing from research possibilities to manufacturing challenges for applications ranging from high-power devices to solar cells to any number of novel multifunctional sensors and controllers. Formation of an abrupt and effective interface is one of the basic requirements for integration of functional materials on different types of semiconductors (from silicon to the wide bandgaps) which can significantly impact the functionality of nanoscale electronic devices. To realize the potential of next-generation electronics, the understanding and control of those initial stages of film layer formation must be understood and translated to a process that can control the initial stages of film deposition. Thin film Fe3O4 has attracted much attention as a material for exploring the potential of spintronics in next-generation information technologies. Synthesis of highly spin-polarized material as spin sources, in combination with wide bandgap semiconductors which have a long spin relaxation time in addition to functionality in high-temperature, high-power, and high-frequency environments, would enhance the performance of today's spintronic devices. Spinel ferrite Fe3O4 has a high Curie temperature of 858 K and it is predicted to possess half-metallic properties, i.e. 100% spin polarization at the Fermi level, which can lead to ultrahigh tunneling magnetoresistance at room temperature. However, these properties have been very difficult to realize in thin film form, and device design strategies require high-quality thin films of Fe3O4. The most common reason reported in literature for the failure of the films to achieve theoretical performance is that the growth techniques used today produce films with antiphase boundaries (APB). These APBs have a strong antiferromagnetic coupling that negatively impact the magnetic and transport properties of epitaxial Fe 3O4 films. Therefore, greater

Mg2BIV: Narrow Bandgap Thermoelectric Semiconductors

Science.gov (United States)

Kim, Il-Ho

2018-05-01

Thermoelectric materials can convert thermal energy directly into electric energy and vice versa. The electricity generation from waste heat via thermoelectric devices can be considered as a new energy source. For instance, automotive exhaust gas and all industrial processes generate an enormous amount of waste heat that can be converted to electricity by using thermoelectric devices. Magnesium compound Mg2BIV (BIV = Si, Ge or Sn) has a favorable combination of physical and chemical properties and can be a good base for the development of new efficient thermoelectrics. Because they possess similar properties to those of group BIV elemental semiconductors, they have been recognized as good candidates for thermoelectric applications. Mg2Si, Mg2Ge and Mg2Sn with an antifluorite structure are narrow bandgap semiconductors with indirect band gaps of 0.77 eV, 0.74 eV, and 0.35 eV, respectively. Mg2BIV has been recognized as a promising material for thermoelectric energy conversion at temperatures ranging from 500 K to 800 K. Compared to other thermoelectric materials operating in the similar temperature range, such as PbTe and filled skutterudites, the important aspects of Mg2BIV are non-toxic and earth-abundant elements. Based on classical thermoelectric theory, the material factor β ( m* / m e)3/2μκ L -1 can be utilized as the criterion for thermoelectric material selection, where m* is the density-of-states effective mass, me is the mass of an electron, μ is the carrier mobility, and κL is the lattice thermal conductivity. The β for magnesium silicides is 14, which is very high compared to 0.8 for iron silicides, 1.4 for manganese silicides, and 2.6 for silicon-germanium alloys. In this paper, basic phenomena of thermoelectricity and transport parameters for thermoelectric materials were briefly introduced, and thermoelectric properties of Mg2BIV synthesized by using a solid-state reaction were reviewed. In addition, various Mg2BIV compounds were discussed

Proceedings of wide band gap semiconductors

International Nuclear Information System (INIS)

Moustakas, T.D.; Pankove, J.I.; Hamakawa, Y.

1992-01-01

This book contains the proceedings of wide band gap semiconductors. Wide band gap semiconductors are under intense study because of their potential applications in photonic devices in the visible and ultraviolet part of the electromagnetic spectrum, and devices for high temperature, high frequency and high power electronics. Additionally, due to their unique mechanical, thermal, optical, chemical, and electronic properties many wide band gap semiconductors are anticipated to find applications in thermoelectric, electrooptic, piezoelectric and acoustooptic devices as well as protective coatings, hard coatings and heat sinks. Material systems covered in this symposium include diamond, II-VI compounds, III-V nitrides, silicon carbide, boron compounds, amorphous and microcrystalline semiconductors, chalcopyrites, oxides and halides. The various papers addressed recent experimental and theoretical developments. They covered issues related to crystal growth (bulk and thin films), structure and microstructure, defects, doping, optoelectronic properties and device applications. A theoretical session was dedicated to identifying common themes in the heteroepitaxy and the role of defects in doping, compensation and phase stability of this unique class of materials. Important experimental milestones included the demonstrations of bright blue injection luminescence at room temperatures from junctions based on III-V nitrides and a similar result from multiple quantum wells in a ZnSe double heterojunction at liquid nitrogen temperatures

Wide bandgap engineering of (AlGa)2O3 films

International Nuclear Information System (INIS)

Zhang, Fabi; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Guo, Qixin; Arita, Makoto

2014-01-01

Bandgap tunable (AlGa) 2 O 3 films were deposited on sapphire substrates by pulsed laser deposition (PLD). The deposited films are of high transmittance as measured by spectrophotometer. The Al content in films is almost the same as that in targets. The measurement of bandgap energies by examining the onset of inelastic energy loss in core-level atomic spectra using X-ray photoelectron spectroscopy is proved to be valid for determining the bandgap of (AlGa) 2 O 3 films as it is in good agreement with the bandgap values from transmittance spectra. The measured bandgap of (AlGa) 2 O 3 films increases continuously with the Al content covering the whole Al content range from about 5 to 7 eV, indicating PLD is a promising growth technology for growing bandgap tunable (AlGa) 2 O 3 films.

Densely Aligned Graphene Nanoribbon Arrays and Bandgap Engineering

Energy Technology Data Exchange (ETDEWEB)

Su, Justin [Stanford Univ., CA (United States); Chen, Changxin [Stanford Univ., CA (United States); Gong, Ming [Stanford Univ., CA (United States); Kenney, Michael [Stanford Univ., CA (United States)

2017-01-04

Graphene has attracted great interest for future electronics due to its high mobility and high thermal conductivity. However, a two-dimensional graphene sheet behaves like a metal, lacking a bandgap needed for the key devices components such as field effect transistors (FETs) in digital electronics. It has been shown that, partly due to quantum confinement, graphene nanoribbons (GNRs) with ~2 nm width can open up sufficient bandgaps and evolve into semiconductors to exhibit high on/off ratios useful for FETs. However, a challenging problem has been that, such ultra-narrow GNRs (~2 nm) are difficult to fabricate, especially for GNRs with smooth edges throughout the ribbon length. Despite high on/off ratios, these GNRs show very low mobility and low on-state conductance due to dominant scattering effects by imperfections and disorders at the edges. Wider GNRs (>5 nm) show higher mobility, higher conductance but smaller bandgaps and low on/off ratios undesirable for FET applications. It is highly desirable to open up bandgaps in graphene or increase the bandgaps in wide GNRs to afford graphene based semiconductors for high performance (high on-state current and high on/off ratio) electronics. Large scale ordering and dense packing of such GNRs in parallel are also needed for device integration but have also been challenging thus far. It has been shown theoretically that uniaxial strains can be applied to a GNR to engineer its bandgap. The underlying physics is that under uniaxial strain, the Dirac point moves due to stretched C-C bonds, leading to an increase in the bandgap of armchair GNRs by up to 50% of its original bandgap (i.e. bandgap at zero strain). For zigzag GNRs, due to the existence of the edge states, changes of bandgap are smaller under uniaxial strain and can be increased by ~30%. This work proposes a novel approach to the fabrication of densely aligned graphene nanoribbons with highly smooth edges afforded by anisotropic etching and uniaxial strain for

Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications

Science.gov (United States)

Wellmann, Peter; Syväjärvi, Mikael; Ou, Haiyan

2014-03-01

understanding the device performance. In relation to these, the surface pre-treatment and deposition technique can influence the reliability and electric field durability of the system, and relate to interface and near interface regions between the dielectric and semiconductor which can host electronic defects which change the surface potential, reduces mobility and enhance the recombination of charge carriers. At the end, materials for energy savings are critically needed. At the symposium ''Alternative approaches of SiC and related wide bandgap materials in light emitting and solar cell applications'', held at the E-MRS 2013 Spring meeting, 27-31 May, 2013 Strasbourg, France, a variety of concepts were presented. In this publication, a selection is presented that represents a range of issues from materials to reliability processing to system approaches. Acknowledgements: Technical support during preparation of the symposium program and proceedings by Saskia Schimmel is greatly acknowledged.

Tuning the band gap of PbCrO{sub 4} through high-pressure: Evidence of wide-to-narrow semiconductor transitions

Energy Technology Data Exchange (ETDEWEB)

Errandonea, D., E-mail: daniel.errandonea@uv.es [Departamento de Física Aplicada-ICMUV, Universitat de València, MALTA ConsoliderTeam, C/Dr. Moliner 50, 46100 Burjassot (Spain); Bandiello, E.; Segura, A. [Departamento de Física Aplicada-ICMUV, Universitat de València, MALTA ConsoliderTeam, C/Dr. Moliner 50, 46100 Burjassot (Spain); Hamlin, J.J.; Maple, M.B. [Department of Physics, University of California, San Diego, La Jolla, CA 92093 (United States); Rodriguez-Hernandez, P.; Muñoz, A. [Departamento de Física Fundamental II, Instituto de Materiales y Nanotecnología, Universidad de La Laguna, MALTA ConsoliderTeam, La Laguna, 38205 Tenerife (Spain)

2014-02-25

Highlights: • Electronic and optical properties of PbCrO{sub 4} are studied under compression. • Band-gap collapses are observed and correlated with structural phase transitions. • PbCrO{sub 4} band-gap is reduced from 2.3 to 0.8 eV in a 20 GPa range. • PbCrO{sub 4} is an n-type semiconductor with donor levels associated to Frenkel defects. • A deep-to-shallow donor transformation at HP induces a large resistivity decrease. -- Abstract: The electronic transport properties and optical properties of lead(II) chromate (PbCrO{sub 4}) have been studied at high pressure by means of resistivity, Hall-effect, and optical-absorption measurements. Band-structure first-principle calculations have been also performed. We found that the low-pressure phase is a direct band-gap semiconductor (Eg = 2.3 eV) that shows a high resistivity. At 3.5 GPa, associated to a structural phase transition, a band-gap collapse takes place, becoming Eg = 1.8 eV. At the same pressure the resistivity suddenly decreases due to an increase of the carrier concentration. In the HP phase, PbCrO{sub 4} behaves as an n-type semiconductor, with a donor level probably associated to the formation of oxygen vacancies. At 15 GPa a second phase transition occurs to a phase with Eg = 1.2 eV. In this phase, the resistivity increases as pressure does probably due to the self-compensation of donor levels and the augmentation of the scattering of electrons with ionized impurities. In the three phases the band gap red shifts under compression. At 20 GPa, Eg reaches a value of 0.8 eV, behaving PbCrO{sub 4} as a narrow-gap semiconductor.

Analysis of High Switching Frequency Quasi-Z-Source Photovoltaic Inverter Using Wide Bandgap Devices

Science.gov (United States)

Kayiranga, Thierry

Power inverters continue to play a key role in todays electrical system more than ever. Power inverters employ power semiconductors to converter direct current (DC) into alternating current (AC). The performance of the semiconductors is based on speed and efficiency. Until recently, Silicon (Si) semiconductors had been established as mature. However, the continuous optimization and improvements in the production process of Si to meet today technology requirements have pushed Si materials to their theoretical limits. In an effort to find a suitable replacement, wide bandgap devices mainly Gallium Nitride (GaN) and Silicon Carbide (SiC), have proved to be excellent candidates offering high operation temperature, high blocking voltage and high switching frequency; of which the latter makes GaN a better candidate in high switching low voltage in Distributed Generations (DG). The single stage Quasi-Z-Source Inverter (qZSI) is also able to draw continuous and constant current from the source making ideal for PV applications in addition to allowing shoot-through states. The qZSI find best applications in medium level ranges where multiples qZS inverters can be cascaded (qZS-CMI) by combining the benefit of the qZSI, boost capabilities and continuous and constant input current, and those of the CMI, low output harmonic content and independent MPPT. When used with GaN devices operating at very high frequency, the qZS network impedance can be significantly reduced. However, the impedance network becomes asymmetric. The asymmetric impedance network (AIN-qZSI) has several advantages such as increased power density, increases system lifetime, small size volume and size making it more attractive for module integrated converter (MIC) concepts. However, there are technical challenges. With asymmetric component, resonance is introduced in the system leading to more losses and audible noise. With small inductances, new operation states become available further increasing the system

Advances in semiconductor photodetectors for scintillators

International Nuclear Information System (INIS)

Farrell, R.; Olschner, F.; Shah, K.; Squillante, M.R.

1997-01-01

Semiconductors photodetectors have long seemed an attractive alternative for scintillation detection, but only recently have semiconductor photodiodes been proven suitable for some room temperature applications. There are many applications, however for which the performance of standard silicon p-i-n photodiodes is not satisfactory. This article reviews recent progress in two different families of novel semiconductor photodetectors: (1) wide bandgap compound semiconductors and (2) silicon photodetectors with enhanced signal-to-noise ratio. The compounds discussed and compared in this paper are HgI 2 , PbI 2 , InI, TlBr, TlBr 1-x I x and HgBr 1-x I x . The paper will also examine unity gain silicon drift diodes and avalanche photodiodes with maximum room temperature gain greater than 10000. (orig.)

Computational nano-materials design for high-TC ferromagnetism in wide-gap magnetic semiconductors

International Nuclear Information System (INIS)

Katayama-Yoshida, H.; Sato, K.; Fukushima, T.; Toyoda, M.; Kizaki, H.; Dinh, V.A.; Dederichs, P.H.

2007-01-01

We propose materials design of high-T C wide band-gap dilute magnetic semiconductors (DMSs) based on first-principles calculations by using the Korringa-Kohn-Rostoker coherent potential approximation (KKR-CPA) method. First, we discuss a unified physical picture of ferromagnetism in II-VI and III-V DMSs and show that DMS family is categorized into two groups depending on the electronic structure. One is the system where Zener's double exchange mechanism dominates in the ferromagnetic interaction, and in the other systems Zener's p-d exchange mechanism dominates. Next, we develop an accurate method for T C calculation for the DMSs and show that the mean field approximation completely fails to predict Curie temperature of DMS in particular for wide-gap DMS where the exchange interaction is short-ranged. The calculated T C of homogeneous DMSs by using the present method agrees very well with available experimental values. For more realistic material design, we simulate spinodal nano-decomposition by applying the Monte Carlo method to the Ising model with ab initio chemical pair interactions between magnetic impurities in DMS. It is found that by controlling the dimensionality of the decomposition various characteristic phases occur in DMS such as 3D Dairiseki-phase and 1D Konbu-phase, and it is suggested that super-paramagnetic blocking phenomena should be important to understand the magnetism of wide-gap DMS. Based on the present simulations for spinodal nano-decomposition, we propose a new crystal growth method of positioning by seeding and shape controlling method in 100 Tera-bit density of nano-magnets in the semiconductor matrix with high-T C (or high-T B )

Band Engineering Small Bandgap p-Type Semiconductors: Investigations of their Optical and Photoelectrochemical Properties

Science.gov (United States)

Zoellner, Brandon

Mixed-metal oxides containing Mn(II), Cu(I), Ta(V), Nb(V), and V(V) were investigated for their structures and properties as new p-type semiconductors and in the potential applications involving the photocatalytic conversion of water into hydrogen and oxygen. Engineering of the bandgaps was achieved by combining metal cations that have halffilled (Mn 3d5) or filled (Cu 3d10) d-orbitals together with metal cations that have empty (V/Nb/Ta 3/4/5 d0) d-orbitals. The research described herein focuses on the synthesis, optical, electronic, and photocatalytic properties of the metal-oxide semiconductors MnV2O6, Cu3VO 4, CuNb1-xTaxO3, and Cu5(Ta1-xNbx)11O30. Powder X-ray diffraction was used to probe their phase purity as well as atomic-level crystallographic details, i.e. shifts of lattice parameters, chemical compositions, and changes in local bonding environments. Optical measurements revealed visible-light bandgap sizes of ˜1.17 eV (Cu3VO4), ˜1.45 eV (MnV2O6), ˜1.89-1.97 eV (CuNb1-xTa xO3), and ˜1.97-2.50 eV (Cu5(Ta1-xNb x)11O30). The latter two were found to systematically vary as a function of composition. Electrochemical impedance spectroscopy measurements of MnV2O6 and Cu3VO 4 provided the first experimental characterization of the energetic positions of the valence and conduction bands with respect to the water oxidation and reduction potentials, as well as confirmed the p-type nature of each semiconductor. The valence and conduction band energies were found to be suitable for driving either one or both of the water-splitting half reaction (i.e. 2H+ → H2 and 2H2O → O2 + 4H+). Photoelectrochemical measurements on polycrystalline films of the Cu(I)-based semiconductors under visible-light irradiation produced cathodic currents indicative of p-type semiconductor character and chemical reduction at their surfaces in the electrolyte solution. The stability of the photocurrents was increased by the addition of CuO oxide particles either externally deposited or

GW quasiparticle bandgaps of anatase TiO2 starting from DFT + U.

Science.gov (United States)

Patrick, Christopher E; Giustino, Feliciano

2012-05-23

We investigate the quasiparticle band structure of anatase TiO(2), a wide gap semiconductor widely employed in photovoltaics and photocatalysis. We obtain GW quasiparticle energies starting from density-functional theory (DFT) calculations including Hubbard U corrections. Using a simple iterative procedure we determine the value of the Hubbard parameter yielding a vanishing quasiparticle correction to the fundamental bandgap of anatase TiO(2). The bandgap (3.3 eV) calculated using this optimal Hubbard parameter is smaller than the value obtained by applying many-body perturbation theory to standard DFT eigenstates and eigenvalues (3.7 eV). We extend our analysis to the rutile polymorph of TiO(2) and reach similar conclusions. Our work highlights the role of the starting non-interacting Hamiltonian in the calculation of GW quasiparticle energies in TiO(2) and suggests an optimal Hubbard parameter for future calculations.

A comparative study of semiconductor-based plasmonic metamaterials

DEFF Research Database (Denmark)

Naik, Gururaj V.; Boltasseva, Alexandra

2011-01-01

and very large negative real permittivity values, and in addition, their optical properties cannot be tuned. These issues that put severe constraints on the device applications of MMs could be overcome if semiconductors are used as plasmonic materials instead of metals. Heavily doped, wide bandgap oxide...... semiconductors could exhibit both a small negative real permittivity and relatively small losses in the NIR. Heavily doped oxides of zinc and indium were already reported to be good, low loss alternatives to metals in the NIR range. Here, we consider these transparent conducting oxides (TCOs) as alternative...

2012 Gordon Research Conference on Defects in Semiconductors - Formal Schedule and Speaker/Poster Program

Energy Technology Data Exchange (ETDEWEB)

Glaser, Evan [Naval Research Lab. (NRL), Washington, DC (United States)

2012-08-17

The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

Kinetics of singlet and triplet excitons in a wide-band-gap copolymer

NARCIS (Netherlands)

Loi, MA; Gadermaier, C; List, EJW; Leising, G; Graupner, W; Bongiovanni, G; Mura, A; Pireaux, JJ; Kaeriyama, K

2000-01-01

Transient and photomodulation spectroscopy is used in order to determine decay times and densities of both emitting and absorbing species in the wide band-gap semiconductor poly-2,5-diheptyl-1,4-phenylene-alt-2, S-thienylene (PDHPT). The wide band gap of this material is a consequence of the large

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Directory of Open Access Journals (Sweden)

Liwen Sang

2013-08-01

Full Text Available Ultraviolet (UV photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

Alternative approaches of SiC and related wide bandgap materials in light emitting and solar cell applications

International Nuclear Information System (INIS)

Wellman, P; Syväjärvi, M; Ou, H

2014-01-01

understanding the device performance. In relation to these, the surface pre-treatment and deposition technique can influence the reliability and electric field durability of the system, and relate to interface and near interface regions between the dielectric and semiconductor which can host electronic defects which change the surface potential, reduces mobility and enhance the recombination of charge carriers. At the end, materials for energy savings are critically needed. At the symposium ''Alternative approaches of SiC and related wide bandgap materials in light emitting and solar cell applications'', held at the E-MRS 2013 Spring meeting, 27–31 May, 2013 Strasbourg, France, a variety of concepts were presented. In this publication, a selection is presented that represents a range of issues from materials to reliability processing to system approaches. Acknowledgements: Technical support during preparation of the symposium program and proceedings by Saskia Schimmel is greatly acknowledged

Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers

International Nuclear Information System (INIS)

Jana, Dipankar; Porwal, S.; Sharma, T. K.; Oak, S. M.; Kumar, Shailendra

2014-01-01

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates

33rd International Conference on the Physics of Semiconductors

International Nuclear Information System (INIS)

2017-01-01

Preface to the Proceedings of the 33rd International Conference on the Physics of Semiconductors, Beijing, 2016 Shaoyun Huang 1 , Yingjie Xing 1 , Yang Ji 2 , Dapeng Yu 3 , and Hongqi Xu 1 1 Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China 2 SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 3 State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China From July 31 st to August 5 th , 2016, the 33rd International Conference on the Physics of Semiconductors (ICPS 2016) was held in Beijing, China, with a great success. The International Conference on the Physics of Semiconductors began in the 1950’s and is a premier biennial meeting for reporting all aspects of semiconductor physics including electronic, structural, optical, magnetic and transport properties. Reflecting the state of the art developments in semiconductor physics, ICPS 2016 served as an international forum for scholars, researchers, and specialists across the globe to discuss future research directions and technological advancements. The main topics of ICPS 2016 included: • Material growth, structural properties and characterization, phonons • Wide-bandgap semiconductors • Narrow-bandgap semiconductors • Carbon: nanotubes and graphene • 2D Materials beyond graphene • Organic semiconductors • Topological states of matter, topological Insulators and Weyl semimetals • Transport in heterostructures • Quantum Hall effects • Spintronics and spin phenomena • Electron devices and applications • Optical properties, optoelectronics, solar cells • Quantum optics, nanophotonics • Quantum information • Other topics in semiconductor physics and devices • Special topic: Majorana fermions in solid state (paper)

Fullerene-based low-density superhard materials with tunable bandgaps

Science.gov (United States)

Cao, Ai-Hua; Zhao, Wen-Juan; Gan, Li-Hua

2018-06-01

Four carbon allotropes built from tetrahedral symmetrical fullerenes C28 and C40 are predicted to be superhard materials with mass density around that of water, and all of them are porous semiconductors. Both the bandgaps and hardness decrease with increasing ratio of sp2 hybridized carbon atoms. The mechanical and thermodynamic stabilities of C28- and C40-based allotropes at zero pressure are confirmed by a variety of state-of-the-art theoretical calculations. The evolution trend of bandgap found here suggests that one can obtain low-density hard materials with tunable bandgaps by substituting the carbon atom in diamond with different Td-symmetrical non-IPR fullerene Cn.

III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

KAUST Repository

Detchprohm, T.

2016-11-05

The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.

Spectrally selective solar absorber with sharp and temperature dependent cut-off based on semiconductor nanowire arrays

Science.gov (United States)

Wang, Yang; Zhou, Lin; Zheng, Qinghui; Lu, Hong; Gan, Qiaoqiang; Yu, Zongfu; Zhu, Jia

2017-05-01

Spectrally selective absorbers (SSA) with high selectivity of absorption and sharp cut-off between high absorptivity and low emissivity are critical for efficient solar energy conversion. Here, we report the semiconductor nanowire enabled SSA with not only high absorption selectivity but also temperature dependent sharp absorption cut-off. By taking advantage of the temperature dependent bandgap of semiconductors, we systematically demonstrate that the absorption cut-off profile of the semiconductor-nanowire-based SSA can be flexibly tuned, which is quite different from most of the other SSA reported so far. As an example, silicon nanowire based selective absorbers are fabricated, with the measured absorption efficiency above (below) bandgap ˜97% (15%) combined with an extremely sharp absorption cut-off (transition region ˜200 nm), the sharpest SSA demonstrated so far. The demonstrated semiconductor-nanowire-based SSA can enable a high solar thermal efficiency of ≳86% under a wide range of operating conditions, which would be competitive candidates for the concentrated solar energy utilizations.

Electrical and Optical Measurements of the Bandgap Energy of a Light-Emitting Diode

Science.gov (United States)

Petit, Matthieu; Michez, Lisa; Raimundo, Jean-Manuel; Dumas, Philippe

2016-01-01

Semiconductor materials are at the core of electronics. Most electronic devices are made of semiconductors. The operation of these components is well described by quantum physics which is often a difficult concept for students to understand. One of the intrinsic parameters of semiconductors is their bandgap energy E[subscript g]. In the case of…

Tunable radiation emitting semiconductor device

NARCIS (Netherlands)

2009-01-01

A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

Photonic Bandgap (PBG) Shielding Technology

Science.gov (United States)

Bastin, Gary L.

2007-01-01

Photonic Bandgap (PBG) shielding technology is a new approach to designing electromagnetic shielding materials for mitigating Electromagnetic Interference (EM!) with small, light-weight shielding materials. It focuses on ground planes of printed wiring boards (PWBs), rather than on components. Modem PSG materials also are emerging based on planar materials, in place of earlier, bulkier, 3-dimensional PBG structures. Planar PBG designs especially show great promise in mitigating and suppressing EMI and crosstalk for aerospace designs, such as needed for NASA's Constellation Program, for returning humans to the moon and for use by our first human visitors traveling to and from Mars. Photonic Bandgap (PBG) materials are also known as artificial dielectrics, meta-materials, and photonic crystals. General PBG materials are fundamentally periodic slow-wave structures in I, 2, or 3 dimensions. By adjusting the choice of structure periodicities in terms of size and recurring structure spacings, multiple scatterings of surface waves can be created that act as a forbidden energy gap (i.e., a range of frequencies) over which nominally-conductive metallic conductors cease to be a conductor and become dielectrics. Equivalently, PBG materials can be regarded as giving rise to forbidden energy gaps in metals without chemical doping, analogous to electron bandgap properties that previously gave rise to the modem semiconductor industry 60 years ago. Electromagnetic waves cannot propagate over bandgap regions that are created with PBG materials, that is, over frequencies for which a bandgap is artificially created through introducing periodic defects

Band anticrossing effects in highly mismatched semiconductor alloys

Energy Technology Data Exchange (ETDEWEB)

Wu, Junqiao [Univ. of California, Berkeley, CA (United States)

2002-01-01

occurs between localized states and the valence band states. Soft x-ray fluorescence experiments provide direct evidence of the BAC interaction in these systems. In the final chapter of the thesis, I describe and summarize my studies of optical properties of wurtzite InN and related alloys. Early studies performed on InN films grown by sputtering techniques suggested a direct bandgap of ~1.9 eV for this semiconductor. Very recently, high-quality InN films with much higher mobility have become available by using the molecular beam epitaxy growth method. Optical experiments carried out on these samples reveal a narrow bandgap for InN of 0.77 eV, much lower than the previously accepted value. Optical properties of InGaN and InAlN ternaries on the In rich side have also been characterized and are found to be consistent with the narrow bandgap of InN. The bandgap bowing parameters in these alloys were determined. In the context of these findings, the bandgap energies of InGaN and InAlN were found to cover a wide spectral range from the infrared for InN to the ultraviolet for GaN and deep ultraviolet for AlN. The significance of this work is rooted in many important applications of nitride semiconductors in optoelectronics and solar energy conversion devices.

Bandgap Opening in Graphene Induced by Patterned Hydrogen Adsorption

DEFF Research Database (Denmark)

Balog, Richard; Jørgensen, Bjarke; Nilsson, Louis

2010-01-01

fermions, and graphene shows ballistic charge transport, turning it into an ideal material for circuit fabrication. However, graphene lacks a bandgap around the Fermi level, which is the defining concept for semiconductor materials and essential for controlling the conductivity by electronic means. Theory...

Theoretical prediction of sandwiched two-dimensional phosphide binary compound sheets with tunable bandgaps and anisotropic physical properties

Science.gov (United States)

Zhang, C. Y.; Yu, M.

2018-03-01

Atomic layers of GaP and InP binary compounds with unique anisotropic structural, electronic and mechanical properties have been predicted from first-principle molecular dynamics simulations. These new members of the phosphide binary compound family stabilize to a sandwiched two-dimensional (2D) crystalline structure with orthorhombic lattice symmetry and high buckling of 2.14 Å-2.46 Å. Their vibration modes are similar to those of phosphorene with six Raman active modes ranging from ˜80 cm-1 to 400 cm-1. The speeds of sound in their phonon dispersions reflect anisotropy in their elastic constants, which was further confirmed by their strong directional dependence of Young’s moduli and effective nonlinear elastic moduli. They show wide bandgap semiconductor behavior with fundamental bandgaps of 2.89 eV for GaP and 2.59 eV for InP, respectively, even wider than their bulk counterparts. Such bandgaps were found to be tunable under strain. In particular, a direct-indirect bandgap transition was found under certain strains along zigzag or biaxial orientations, reflecting their promising applications in strain-induced bandgap engineering in nanoelectronics and photovoltaics. Feasible pathways to realize these novel 2D phosphide compounds are also proposed.

Properties of SiC semiconductor detector of fast neutrons investigated using MCNPX code

International Nuclear Information System (INIS)

Sedlakova, K.; Sagatova, A.; Necas, V.; Zatko, B.

2013-01-01

The potential of silicon carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. The wide bandgap of SiC (3.25 eV for 4H-SiC polytype) compared to that for more conventionally used semiconductors, such as silicon (1.12 eV) and germanium (0.67 eV), makes SiC an attractive semiconductor for use in high dose rate and high ionization nuclear environments. The present work focused on the simulation of particle transport in SiC detectors of fast neutrons using statistical analysis of Monte Carlo radiation transport code MCNPX. Its possibilities in detector design and optimization are presented.(authors)

Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions

KAUST Repository

Awan, Saif Ullah; Hasanain, S. K.; Hassnain Jaffari, G.; Anjum, Dalaver H.; Qurashi, Umar S.

2014-01-01

Microstructural and optical properties of Zn1-yLiyO (0.00 ≤y ≤0.10) nanoparticles are investigated. Li incorporation leads to substantial changes in the structural characterization. From micro-structural analysis, no secondary phases or clustering of Li was detected. Elemental maps confirmed homogeneous distribution of Li in ZnO. Sharp UV peak due to the recombination of free exciton and defects based luminescence broad visible band was observed. The transition from the conduction band to Zinc vacancy defect level in photoluminescence spectra is found at 518±2.5nm. The yellow luminescence was observed and attributed to Li related defects in doped samples. With increasing Li doping, a decrease in energy bandgap was observed in the range 3.26±0.014 to 3.17±0.018eV. The bandgap narrowing behavior is explained in terms of the band tailing effect due to structural disorder, carrier-impurities, carrier-carrier, and carrier-phonon interactions. Tuning of the bandgap energy in this class of wide bandgap semiconductor is very important for room temperature spintronics applications and optical devices. © 2014 AIP Publishing LLC.

Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions

KAUST Repository

Awan, Saif Ullah

2014-08-28

Microstructural and optical properties of Zn1-yLiyO (0.00 ≤y ≤0.10) nanoparticles are investigated. Li incorporation leads to substantial changes in the structural characterization. From micro-structural analysis, no secondary phases or clustering of Li was detected. Elemental maps confirmed homogeneous distribution of Li in ZnO. Sharp UV peak due to the recombination of free exciton and defects based luminescence broad visible band was observed. The transition from the conduction band to Zinc vacancy defect level in photoluminescence spectra is found at 518±2.5nm. The yellow luminescence was observed and attributed to Li related defects in doped samples. With increasing Li doping, a decrease in energy bandgap was observed in the range 3.26±0.014 to 3.17±0.018eV. The bandgap narrowing behavior is explained in terms of the band tailing effect due to structural disorder, carrier-impurities, carrier-carrier, and carrier-phonon interactions. Tuning of the bandgap energy in this class of wide bandgap semiconductor is very important for room temperature spintronics applications and optical devices. © 2014 AIP Publishing LLC.

Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors.

Science.gov (United States)

Zhang, Zuocheng; Li, Likai; Horng, Jason; Wang, Nai Zhou; Yang, Fangyuan; Yu, Yijun; Zhang, Yu; Chen, Guorui; Watanabe, Kenji; Taniguchi, Takashi; Chen, Xian Hui; Wang, Feng; Zhang, Yuanbo

2017-10-11

Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for optoelectronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit. Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the density of thermally activated carriers; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs) at room temperature. The effect opens up opportunities for future development of electromechanical transducers based on black phosphorus, and we demonstrate an ultrasensitive strain gauge constructed from black phosphorus thin crystals.

Bandgap Engineering of Double Perovskites for One- and Two-photon Water Splitting

DEFF Research Database (Denmark)

Castelli, Ivano Eligio; Thygesen, Kristian Sommer; Jacobsen, Karsten Wedel

2013-01-01

Computational screening is becoming increasingly useful in the search for new materials. We are interested in the design of new semiconductors to be used for light harvesting in a photoelectrochemical cell. In the present paper, we study the double perovskite structures obtained by combining 46...... stable cubic perovskites which was found to have a finite bandgap in a previous screening-study. The four-metal double perovskite space is too large to be investigated completely. For this reason we propose a method for combining different metals to obtain a desired bandgap. We derive some bandgap design...... rules on how to combine two cubic perovskites to generate a new combination with a larger or smaller bandgap compared with the constituent structures. Those rules are based on the type of orbitals involved in the conduction bands and on the size of the two cubic bandgaps. We also see that a change...

Effect of van der Waals interaction on the properties of SnS2 layered semiconductor

International Nuclear Information System (INIS)

Seminovski, Y.; Palacios, P.; Wahnón, P.

2013-01-01

Nowadays, dispersion correction applied on layered semiconductors is a topic of interest. Among the known layered semiconductors, SnS 2 polytypes are wide gap semiconductors with a van der Waals interaction between their layers, which could form good materials to be used in photovoltaic applications. The present work gives an approach to the SnS 2 geometrical and electronic characterization using an empirical dispersion correction added to the Perdew–Burke–Ernzerhof functional and subsequent actualization of the electronic charge density using the screened hybrid Heyd–Scuseria–Ernzerhof functional using a density functional code. The obtained interlayer distance and band-gap are in good agreement with experimental values when van der Waals dispersion forces are included. - Highlights: ► Tin disulphide (SnS 2 ) has been calculated using density functional theory methods. ► A dispersion correction was also applied for two different SnS 2 polytypes. ► Geometrical parameters and band-gaps were obtained using both approaches. ► Our calculations give a good agreement of the computed band gap with experiment

The features of modelling semiconductor lasers with a wide contact

Directory of Open Access Journals (Sweden)

Rzhanov Alexey

2017-01-01

Full Text Available The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.

High frequency modulation circuits based on photoconductive wide bandgap switches

Science.gov (United States)

Sampayan, Stephen

2018-02-13

Methods, systems, and devices for high voltage and/or high frequency modulation. In one aspect, an optoelectronic modulation system includes an array of two or more photoconductive switch units each including a wide bandgap photoconductive material coupled between a first electrode and a second electrode, a light source optically coupled to the WBGP material of each photoconductive switch unit via a light path, in which the light path splits into multiple light paths to optically interface with each WBGP material, such that a time delay of emitted light exists along each subsequent split light path, and in which the WBGP material conducts an electrical signal when a light signal is transmitted to the WBGP material, and an output to transmit the electrical signal conducted by each photoconductive switch unit. The time delay of the photons emitted through the light path is substantially equivalent to the time delay of the electrical signal.

Effect of van der Waals interaction on the properties of SnS{sub 2} layered semiconductor

Energy Technology Data Exchange (ETDEWEB)

Seminovski, Y. [Instituto de Energía Solar, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain); Dpt. TEAT, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain); Palacios, P., E-mail: pablo.palacios@upm.es [Instituto de Energía Solar, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain); Dpt. FyQATA, EIAE, Universidad Politécnica de Madrid, Pz. Cardenal Cisneros, 3, 28040 Madrid (Spain); Wahnón, P. [Instituto de Energía Solar, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain); Dpt. TEAT, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain)

2013-05-01

Nowadays, dispersion correction applied on layered semiconductors is a topic of interest. Among the known layered semiconductors, SnS{sub 2} polytypes are wide gap semiconductors with a van der Waals interaction between their layers, which could form good materials to be used in photovoltaic applications. The present work gives an approach to the SnS{sub 2} geometrical and electronic characterization using an empirical dispersion correction added to the Perdew–Burke–Ernzerhof functional and subsequent actualization of the electronic charge density using the screened hybrid Heyd–Scuseria–Ernzerhof functional using a density functional code. The obtained interlayer distance and band-gap are in good agreement with experimental values when van der Waals dispersion forces are included. - Highlights: ► Tin disulphide (SnS{sub 2}) has been calculated using density functional theory methods. ► A dispersion correction was also applied for two different SnS{sub 2} polytypes. ► Geometrical parameters and band-gaps were obtained using both approaches. ► Our calculations give a good agreement of the computed band gap with experiment.

Materials Research Society Symposium Proceedings on Diamond, SiC and Nitride Wide Bandgap Semiconductors Held at San Francisco, California on 4-8 April 1994. Volume 339.

Science.gov (United States)

1994-04-08

Investigaciones Cientificas y TUcnicas, Argentina. REFERENCES 1. Wide-band-gap Semiconductors, ed. C. G. Van de Walle, Proc. Seventh Trieste ICTP-IUPAP...Department E 16, Technical University of Munich, D-85747 Garching, Germany ** Departamento e Centro de Fisica (INIC), University of Aveiro, 3800...Departamento de Fisica , Universidade de Aveiro, 3800 Aveiro, Portugal ** National Institute for Research in Inorganic Materials, Namiki 1-1

Optical and optoelectronic properties of nanostructures based on wide-bandgap semiconductors

International Nuclear Information System (INIS)

Kalden, Joachim

2010-01-01

approach to achieve semiconductor waveguides is the growth of self assembled nanowires, as this kind of nanostructure possesses promising crystalline properties, and no processing is necessary to obtain pillar-like geometries. The last part of the work contains an analysis of the optical properties of nanowires. Furthermore, the influence of doping on these structures is investigated by electron microscopy and PL measurements. Also the integration of quantum well heterostructures is presented and examined. (orig.)

Simulation of push-pull inverter using wide bandgap devices

Science.gov (United States)

Al-badri, Mustafa; Matin, Mohammed A.

2016-09-01

This paper discusses the use of wide bandgap devices (SiC-MOSFET) in the design of a push-pull inverter which provides inexpensive low power dc-ac inverters. The parameters used were 1200V SiC MOSFET(C2M0040120D) made by power company ROHM. This modeling was created using parameters that were provided from a device datasheet. The spice model is provided by this company to study the effect of adding this component on push-pull inverter ordinary circuit and compared results between SiC MOSFET and silicon MOSFET (IRFP260M). The results focused on Vout and Vmos stability as well as on output power and MOSFET power loss because it is a very crucial aspect on DC-AC inverter design. These results are done using the National Instrument simulation program (Multisim 14). It was found that power loss is better in the 12 and 15 vdc inverter. The Vout in the SIC MOSFET circuit shows more stability in the high current low resistance load in comparison to the Silicon MOSFET circuit and this will improve the overall performance of the circuit.

2014 Defects in Semiconductors Gordon Research Conference & Gordon Research Seminar. Research Area 1: Materials Science, 1.3 Physical Properties of Materials

Science.gov (United States)

2014-08-01

invite leading experts from the full range of industry to academia to cover the topics of wide bandgap nitride and oxide semiconductors , the...Tsukuba University) " Positron Annihilation Studies in InGaN" 12:10 pm - 12:30 pm Discussion 9 12:30 pm Lunch 1:30 pm - 4:00 pm Free Time 4:00 pm...SECURITY CLASSIFICATION OF: The Gordon Research Conference on DEFECTS IN SEMICONDUCTORS was held at Bentley University in Waltham, Massachusetts

A model for the direct-to-indirect band-gap transition in monolayer ...

Indian Academy of Sciences (India)

Abstract. A monolayer of MoSe2 is found to be a direct band-gap semiconductor. We show, ... In order to determine appropriate basis for the tight-binding model, the Mo and Se ..... RD thanks the Council of Scientific and Industrial Research.

Attractive electron correlation in wide band gap semiconductors by electron-photon interaction

International Nuclear Information System (INIS)

Takeda, Hiroyuki; Yoshino, Katsumi

2004-01-01

We theoretically demonstrate attractive electron correlation in wide band gap semiconductors by electron-photon interaction. At low temperature, wavevectors of electromagnetic waves absorbed in wide band gap semiconductors cannot be neglected for wavevectors of electron waves; that is, electromagnetic waves affect the movements of electrons. In particular, attractive interaction occurs between two electrons when one electron changes from a valence band to a conduction band and the other electron changes from a conduction band to a valence band

WOCSDICE󈧇 The 27th Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe May 26 - 28, 2003 Forigen, Switzerland

Science.gov (United States)

2003-05-28

Rodrigues-Girones, M. Saglam, A. Megej, H.L. Hartnagel vi Recent Advances, Remaining Challenges in Wide Bandgap Semiconductors Colin ...R. H. Friend, and H. Sirringhaus, Science, 299, pp. 1881-1884, 2003. 19. C. J. Drury , C. M. J. Mutsaers, C. M. Hart, M. Matters, and D. M. de Leeuw

The effects of heavy doping on the electronic states in semiconductors

International Nuclear Information System (INIS)

Sernelius, B.E.

1987-01-01

The physics of semiconductors is reviewed. Topics included in the discussion are energy of the dopant system (kinetic energy in a many-valley semiconductor, exchange energy in an ellipsoidal Fermi volume, energy in a polar semiconductor), self energy shifts, band-gap narrowing, and piezo experiments. 31 refs., 27 figs

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

International Nuclear Information System (INIS)

Lumb, M. P.; Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J.; González, M.; Bennett, M. F.; Herrera, M.; Delgado, F. J.; Molina, S. I.

2016-01-01

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm 2 to be realized.

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

Energy Technology Data Exchange (ETDEWEB)

Lumb, M. P. [The George Washington University, Washington, DC 20037 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J. [US Naval Research Laboratory, Washington, DC 20375 (United States); González, M.; Bennett, M. F. [Sotera Defense Solutions, Annapolis Junction, Maryland 20701 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Herrera, M.; Delgado, F. J.; Molina, S. I. [University of Cádiz, 11510, Puerto Real, Cádiz (Spain)

2016-05-21

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.

Optical characterization of wide-gap detector-grade semiconductors

International Nuclear Information System (INIS)

Elshazly, E.S.

2011-01-01

Wide bandgap semiconductors are being widely investigated because they have the potential to satisfy the stringent material requirements of high resolution, room temperature gamma-ray spectrometers. In particular, Cadmium Zinc Telluride (Cd 1-x Zn x Te, x∼0.1) and Thallium Bromide (Tl Br), due to their combination of high resistivity, high atomic number and good electron mobility, have became very promising candidates for use in X- and gamma-ray detectors operating at room temperature. In this study, carrier trapping times were measured in CZT and Tl Br as a function of temperature and material quality. Carrier lifetimes and tellurium inclusion densities were measured in detector-grade Cadmium Zinc Telluride (CZT) crystals grown by the High Pressure Bridgman method and Modified Bridgman method. Excess carriers were produced in the material using a pulsed YAG laser with a 1064 nm wavelength and 7 ns pulse width. Infrared microscopy was used to measure the tellurium defect densities in CZT crystals. The electronic decay was optically measured at room temperature. Spatial mapping of lifetimes and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. A significant and strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time. Carrier trapping times and tellurium inclusions were measured in CZT in the temperature range from 300 K to 110 K and the results were analyzed using a theoretical trapping model. Spatial mapping of carrier trapping times and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. While a strong correlation between trapping time and defect density of tellurium inclusions was observed, there was no significant change in the trap energy. Carrier trapping times were measured in detector grade thallium bromide (Tl Br) and compared with the results for cadmium zinc telluride (CZT) in

A superhard sp3 microporous carbon with direct bandgap

Science.gov (United States)

Pan, Yilong; Xie, Chenlong; Xiong, Mei; Ma, Mengdong; Liu, Lingyu; Li, Zihe; Zhang, Shuangshuang; Gao, Guoying; Zhao, Zhisheng; Tian, Yongjun; Xu, Bo; He, Julong

2017-12-01

Carbon allotropes with distinct sp, sp2, and sp3 hybridization possess various different properties. Here, a novel all-sp3 hybridized tetragonal carbon, namely the P carbon, was predicted by the evolutionary particle swarm structural search. It demonstrated a low density among all-sp3 carbons, due to the corresponding distinctive microporous structure. P carbon is thermodynamically stable than the known C60 and could be formed through the single-walled carbon nanotubes (SWCNTs) compression. P carbon is a direct bandgap semiconductor displaying a strong and superhard nature. The unique combination of electrical and mechanical properties constitutes P carbon a potential superhard material for semiconductor industrial fields.

Effect of Non-Stoichiometric Solution Chemistry on Improving the Performance of Wide-Bandgap Perovskite Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Zhu, Kai [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Yang, Mengjin [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kim, Donghoe [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Li, Zhen [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Reid, Obadiah G [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Yu, Yue [University of Toledo; Song, Zhaoning [University of Toledo; Zhao, Dewei [University of Toledo; Wang, Changlei [University of Toledo; Li, Liwei [ENN Energy Research Institute; ENN Solar Energy Co., Ltd.; Meng, Yuan [ENN Energy Research Institute; ENN Solar Energy Co., Ltd.; Guo, Ted [ENN Energy Research Institute; ENN Solar Energy Co., Ltd.; Yan, Yanfa [University of Toledo

2017-10-18

A high-efficiency wide-bandgap (WBG) perovskite solar cell is critical for developing perovskite-related (e.g., all-perovskite, perovskite/Si, or perovskite/Cu(In,Ga)Se2) tandem devices. Here, we demonstrate the use of non-stoichiometric precursor chemistry with excess methylammonium halides (MAX; X = I, Br, or Cl) for preparing high-quality ~1.75-eV FA0.83Cs0.17Pb(I0.6Br0.4)3 perovskite solar cells. Among various methylammonium halides, using excess MABr in the non-stoichiometric precursor exhibits the strongest effect on improving perovskite crystallographic properties and device characteristics without affecting the perovskite composition. In contrast, using excess MAI significantly reduces the bandgap of perovskite due to the replacement of Br with I. Using 40% excess MABr, we demonstrate a single-junction WBG perovskite solar cell with stabilized efficiency of 16.4%. We further demonstrate a 20.3%-efficient 4-terminal tandem device by using a 14.7%-efficient semi-transparent WBG perovskite top cell and an 18.6%-efficient unfiltered (5.6%-efficient filtered) Si bottom cell.

Bandgap tunability at single-layer molybdenum disulphide grain boundaries

KAUST Repository

Huang, Yu Li

2015-02-17

Two-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties of interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle energy gap to be 2.40±0.05 eV for single-layer, 2.10±0.05 eV for bilayer and 1.75±0.05 eV for trilayer molybdenum disulphide, which were directly grown on a graphite substrate by chemical vapour deposition method. More interestingly, we report an unexpected bandgap tunability (as large as 0.85±0.05 eV) with distance from the grain boundary in single-layer molybdenum disulphide, which also depends on the grain misorientation angle. This work opens up new possibilities for flexible electronic and optoelectronic devices with tunable bandgaps that utilize both the control of two-dimensional layer thickness and the grain boundary engineering.

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Science.gov (United States)

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

2018-03-01

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

Progress in Group III nitride semiconductor electronic devices

International Nuclear Information System (INIS)

Hao Yue; Zhang Jinfeng; Shen Bo; Liu Xinyu

2012-01-01

Recently there has been a rapid domestic development in group III nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China, which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures, and eventually achieve high performance GaN microwave power devices. Some remarkable progresses achieved in the program will be introduced, including those in GaN high electron mobility transistors (HEMTs) and metal—oxide—semiconductor high electron mobility transistors (MOSHEMTs) with novel high-k gate insulators, and material growth, defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication, and quantum transport and spintronic properties of GaN-based heterostructures, and high-electric-field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources. (invited papers)

Effect of temperature on terahertz photonic and omnidirectional band gaps in one-dimensional quasi-periodic photonic crystals composed of semiconductor InSb.

Science.gov (United States)

Singh, Bipin K; Pandey, Praveen C

2016-07-20

Engineering of thermally tunable terahertz photonic and omnidirectional bandgaps has been demonstrated theoretically in one-dimensional quasi-periodic photonic crystals (PCs) containing semiconductor and dielectric materials. The considered quasi-periodic structures are taken in the form of Fibonacci, Thue-Morse, and double periodic sequences. We have shown that the photonic and omnidirectional bandgaps in the quasi-periodic structures with semiconductor constituents are strongly depend on the temperature, thickness of the constituted semiconductor and dielectric material layers, and generations of the quasi-periodic sequences. It has been found that the number of photonic bandgaps increases with layer thickness and generation of the quasi-periodic sequences. Omnidirectional bandgaps in the structures have also been obtained. Results show that the bandwidths of photonic and omnidirectional bandgaps are tunable by changing the temperature and lattice parameters of the structures. The generation of quasi-periodic sequences can also change the properties of photonic and omnidirectional bandgaps remarkably. The frequency range of the photonic and omnidirectional bandgaps can be tuned by the change of temperature and layer thickness of the considered quasi-periodic structures. This work will be useful to design tunable terahertz PC devices.

First-principles study of bandgap tuning in Ge1-xPbxSe

Science.gov (United States)

Lohani, Himanshu

2018-03-01

Narrow bandgap and its tuning are important aspects of materials for their technological applications. In this context group IV-VI semiconductors are one of the interesting candidates. In this paper, we explore the possibility of bandgap tuning in one of the family member of this family GeSe by using isoelectronic Pb doping. Our study is first-principles based electronic structure calculations of Ge1-xPbxSe. This study reveals that the Ge-p and Se-p states are strongly hybridized in GeSe and shows a gap in the DOS at Ef in GeSe. This gap reduces systematically with simultaneous enhancement of the states in the near Ef region as a function of Pb doping. This leads tuning of the indirect bandgap in GeSe via Pb doping. The results of the indirect bandgap decrement are consistent with the experimental findings. We propose a mechanism where the electrostatic effect of dopant Pb cation could be responsible for these changes in the electronic structure of GeSe.

Investigating the electronic properties of multi-junction ZnS/CdS/CdTe graded bandgap solar cells

Energy Technology Data Exchange (ETDEWEB)

Olusola, O.I., E-mail: olajideibk@yahoo.com [Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Department of Physics, School of Science, The Federal University of Technology, Akure (FUTA), P.M.B. 704 (Nigeria); Madugu, M.L.; Dharmadasa, I.M. [Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom)

2017-04-15

The fabrication of multi-junction graded bandgap solar cells have been successfully implemented by electroplating three binary compound semiconductors from II-VI family. The three semiconductor materials grown by electroplating techniques are ZnS, CdS and CdTe thin films. The electrical conductivity type and energy bandgap of each of the three semiconductors were determined using photoelectrochemical (PEC) cell measurement and UV–Vis spectrophotometry techniques respectively. The PEC cell results show that all the three semiconductor materials have n-type electrical conductivity. These two material characterisation techniques were considered in this paper in order to establish the relevant energy band diagram for device results, analysis and interpretation. Solar cells with the device structure glass/FTO/n-ZnS/n-CdS/n-CdTe/Au were then fabricated and characterised using current-voltage (I-V) and capacitance-voltage (C-V) techniques. From the I-V characteristics measurement, the fabricated device structures yielded an open circuit voltage (V{sub oc}) of 670 mV, short circuit current density (J{sub sc}) of 41.5 mA cm{sup −2} and fill-factor (FF) of 0.46 resulting in ∼12.8% efficiency when measured at room temperature under AM1.5 illumination conditions. The device structure showed an excellent rectification factor (RF) of 10{sup 4.3} and ideality factor (n) of 1.88. The results obtained from the C-V measurement also showed that the device structures have a moderate doping level of 5.2 × 10{sup 15} cm{sup −3}. - Highlights: • Electroplating of n-ZnS, n-CdS and n-CdTe binary compound semiconductors. • Fabrication of Schottky barrier solar cells from glass/FTO/n-ZnS/n-CdS/n-CdTe/Au. • Development of multi-junction graded bandgap solar cells using n-n-n structures.

Efficient CsF interlayer for high and low bandgap polymer solar cell

Science.gov (United States)

Mitul, Abu Farzan; Sarker, Jith; Adhikari, Nirmal; Mohammad, Lal; Wang, Qi; Khatiwada, Devendra; Qiao, Qiquan

2018-02-01

Low bandgap polymer solar cells have a great deal of importance in flexible photovoltaic market to absorb sun light more efficiently. Efficient wide bandgap solar cells are always available in nature to absorb visible photons. The development and incorporation of infrared photovoltaics (IR PV) with wide bandgap solar cells can improve overall solar device performance. Here, we have developed an efficient low bandgap polymer solar cell with CsF as interfacial layer in regular structure. Polymer solar cell devices with CsF shows enhanced performance than Ca as interfacial layer. The power conversion efficiency of 4.5% has been obtained for PDPP3T based polymer solar cell with CsF as interlayer. Finally, an optimal thickness with CsF as interfacial layer has been found to improve the efficiency in low bandgap polymer solar cells.

Wide-gap layered oxychalcogenide semiconductors: Materials, electronic structures and optoelectronic properties

International Nuclear Information System (INIS)

Ueda, Kazushige; Hiramatsu, Hidenori; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo

2006-01-01

Applying the concept of materials design for transparent conductive oxides to layered oxychalcogenides, several p-type and n-type layered oxychalcogenides were proposed as wide-gap semiconductors and their basic optical and electrical properties were examined. The layered oxychalcogenides are composed of ionic oxide layers and covalent chalcogenide layers, which bring wide-gap and conductive properties to these materials, respectively. The electronic structures of the materials were examined by normal/inverse photoemission spectroscopy and energy band calculations. The results of the examinations suggested that these materials possess unique features more than simple wide-gap semiconductors. Namely, the layered oxychalcogenides are considered to be extremely thin quantum wells composed of the oxide and chalcogenide layers or 2D chalcogenide crystals/molecules embedded in an oxide matrix. Observation of step-like absorption edges, large band gap energy and large exciton binding energy demonstrated these features originating from 2D density of states and quantum size effects in these layered materials

A Direct Bandgap Copper-Antimony Halide Perovskite.

Science.gov (United States)

Vargas, Brenda; Ramos, Estrella; Pérez-Gutiérrez, Enrique; Alonso, Juan Carlos; Solis-Ibarra, Diego

2017-07-12

Since the establishment of perovskite solar cells (PSCs), there has been an intense search for alternative materials to replace lead and improve their stability toward moisture and light. As single-metal perovskite structures have yielded unsatisfactory performances, an alternative is the use of double perovskites that incorporate a combination of metals. To this day, only a handful of these compounds have been synthesized, but most of them have indirect bandgaps and/or do not have bandgaps energies well-suited for photovoltaic applications. Here we report the synthesis and characterization of a unique mixed metal ⟨111⟩-oriented layered perovskite, Cs 4 CuSb 2 Cl 12 (1), that incorporates Cu 2+ and Sb 3+ into layers that are three octahedra thick (n = 3). In addition to being made of abundant and nontoxic elements, we show that this material behaves as a semiconductor with a direct bandgap of 1.0 eV and its conductivity is 1 order of magnitude greater than that of MAPbI 3 (MA = methylammonium). Furthermore, 1 has high photo- and thermal-stability and is tolerant to humidity. We conclude that 1 is a promising material for photovoltaic applications and represents a new type of layered perovskite structure that incorporates metals in 2+ and 3+ oxidation states, thus significantly widening the possible combinations of metals to replace lead in PSCs.

Band-gap measurements of bulk and nanoscale hematite by soft x-ray spectroscopy

DEFF Research Database (Denmark)

Gilbert, B.; Frandsen, Cathrine; Maxey, E.R.

2009-01-01

Chemical and photochemical processes at semiconductor surfaces are highly influenced by the size of the band gap, and ability to control the band gap by particle size in nanomaterials is part of their promise. The combination of soft x-ray absorption and emission spectroscopies provides band......-gap determination in bulk and nanoscale itinerant electron semiconductors such as CdS and ZnO, but this approach has not been established for materials such as iron oxides that possess band-edge electronic structure dominated by electron correlations. We performed soft x-ray spectroscopy at the oxygen K...

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

Science.gov (United States)

Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

2014-11-01

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in

Self-stabilization of a mode-locked femtosecond fiber laser using a photonic bandgap fiber

DEFF Research Database (Denmark)

Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

2010-01-01

We demonstrate a self-stabilization mechanism of a semiconductor saturable absorber mode-locked linearcavity Yb-doped fiber laser using an intracavity photonic bandgap fiber. This mechanism relies on the spectral shift of the laser pulses to a spectral range of higher anomalous dispersion...... and higher loss of the photonic bandgap fiber, as a reaction to the intracavity power buildup. This, in particular, results in a smaller cavity loss for the stably mode-locked laser, as opposed to the Q-switched mode-locking scenario. The laser provides stable 39–49 pJ pulses of around 230 fs duration at 29...

ZnO - Wide Bandgap Semiconductor and Possibilities of Its Application in Optical Waveguide Structures

Directory of Open Access Journals (Sweden)

Struk Przemysław

2014-08-01

Full Text Available The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. The investigations were focused on the determination of the technology of depositions and the annealing of ZnO layers concerning their optical properties. Special attention was paid to the determination of characteristics of the refractive index of ZnO layers and their coefficients of spectral transmission within the UV-VIS-NIR range. Besides that, also the mode characteristics and the attenuation coefficients of light in the obtained waveguide structures have been investigated. In the case of planar waveguides, in which the ZnO layers have not been annealed after their deposition, the values of the attenuation coefficient of light modes amount to a~ 30 dB/cm. The ZnO layers deposited on the heated substrate and annealed by rapid thermal annealing in an N2 and O2 atmosphere, are characterized by much lower values of the attenuation coefficients: a~ 3 dB/cm (TE0 and TM0 modes. The ZnO optical waveguides obtained according to our technology are characterized by the lowest values of the attenuation coefficients a encountered in world literature concerning the problem of optical waveguides based on ZnO. Studies have shown that ZnO layers elaborated by us can be used in integrated optic systems, waveguides, optical modulators and light sources.

Electronic structure characterization and bandgap engineeringofsolar hydrogen materials

Energy Technology Data Exchange (ETDEWEB)

Guo, Jinghua

2007-11-01

Bandgap, band edge positions as well as the overall band structure of semiconductors are of crucial importance in photoelectrochemical and photocatalytic applications. The energy position of the band edge level can be controlled by the electronegativity of the dopants, the pH of the solution (flatband potential variation of 60 mV per pH unit), as well as by quantum confinement effects. Accordingly, band edges and bandgap can be tailored to achieve specific electronic, optical or photocatalytic properties. Synchrotron radiation with photon energy at or below 1 keV is giving new insight into such areas as condensed matter physics and extreme ultraviolet optics technology. In the soft x-ray region, the question tends to be, what are the electrons doing as they migrated between the atoms. In this paper, I will present a number of soft x-ray spectroscopic study of nanostructured 3d metal compounds Fe{sub 2}O{sub 3} and ZnO.

Four-terminal circuit element with photonic core

Science.gov (United States)

Sampayan, Stephen

2017-08-29

A four-terminal circuit element is described that includes a photonic core inside of the circuit element that uses a wide bandgap semiconductor material that exhibits photoconductivity and allows current flow through the material in response to the light that is incident on the wide bandgap material. The four-terminal circuit element can be configured based on various hardware structures using a single piece or multiple pieces or layers of a wide bandgap semiconductor material to achieve various designed electrical properties such as high switching voltages by using the photoconductive feature beyond the breakdown voltages of semiconductor devices or circuits operated based on electrical bias or control designs. The photonic core aspect of the four-terminal circuit element provides unique features that enable versatile circuit applications to either replace the semiconductor transistor-based circuit elements or semiconductor diode-based circuit elements.

A New Approach for Evaluating Charge Transport Properties of Semiconductor Detectors

International Nuclear Information System (INIS)

Kim, Kyung O; Kim, Jong Kyung; Kim, Soon Young; Ha, Jang Ho

2009-01-01

The semiconductor detectors (e.g., CdTe, CdZnTe, and HgI 2 ) have been widely used for radiation detection and medical imaging because of its various outstanding features such as excellent energy resolution, wide bandgap energy, room temperature operation, and so on. Unfortunately, the performance of these detectors is mainly limited by the charge transport properties of semiconductor, especially the mobility-lifetime products (i.e., (μτ) e and ((μτ) h ). Hence, the analysis on the mobility-lifetime products is very important for evaluating correct characteristics of semiconductor detectors. A commonly used method to analyze the mobilitylifetime products is based on their responses to α particle. However, the α particle method cannot evaluate the ((μτ)h product in many cases, because a semiconductor detector operating at positive bias voltages often yields the energy spectrum without the peaks. This method is also known to be very sensitive to the experimental conditions as well as surface conditions of the detector. In this study, a new approach with gamma-ray instead of α particle was carried out to solve the determination difficulty of the ((μτ) h product with common method. The special relation between the two mobility-lifetime products, which we call the 'Nural equation', was also developed to simply obtain each parameter based on Hecht equation

Characterizations of Proton-irradiated wide bandgap semiconductor devices

International Nuclear Information System (INIS)

Kim, J. H.; Kim, H. R.; Ahn, J. H.

2008-04-01

Current-voltages were compared before and after proton irradiation. As expected from simulation results, 5keV protons severely damaged the transistors' performance compared to 25MeV protons. Also, the effects of both lower and higher fluencies were compared. Source-Drain currents were dramatically decreased under higher fluency. At the highest dose of 2x10 16 protons/cm 2 there was a decrease of 43% in IDS and a 29% decrease in gm. The data is consistent with the introduction of defect centers in the HEMT structure by the high energy protons leading to a reduction in carrier concentration and mobility in the 2- dimensional electron gas channel due to the extremely thin 2DEG and the high displacement threshold energy, AlGaN/GaN HEMT has great potential for applications in earth orbit

Single-graded CIGS with narrow bandgap for tandem solar cells.

Science.gov (United States)

Feurer, Thomas; Bissig, Benjamin; Weiss, Thomas P; Carron, Romain; Avancini, Enrico; Löckinger, Johannes; Buecheler, Stephan; Tiwari, Ayodhya N

2018-01-01

Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se 2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe 2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

Freedom from band-gap slavery: from diode lasers to quantum cascade lasers

Science.gov (United States)

Capasso, Federico

2010-02-01

Semiconductor heterostructure lasers, for which Alferov and Kromer received part of the Nobel Prize in Physics in 2000, are the workhorse of technologies such as optical communications, optical recording, supermarket scanners, laser printers and fax machines. They exhibit high performance in the visible and near infrared and rely for their operation on electrons and holes emitting photons across the semiconductor bandgap. This mechanism turns into a curse at longer wavelengths (mid-infrared) because as the bandgap, shrinks laser operation becomes much more sensitive to temperature, material defects and processing. Quantum Cascade Laser (QCL), invented in 1994, rely on a radically different process for light emission. QCLs are unipolar devices in which electrons undergo transitions between quantum well energy levels and are recycled through many stages emitting a cascade of photons. Thus by suitable tailoring of the layers' thickness, using the same heterostructure material, they can lase across the molecular fingerprint region from 3 to 25 microns and beyond into the far-infrared and submillimiter wave spectrum. High power cw room temperature QCLs and QCLs with large continuous single mode tuning range have found many applications (infrared countermeasures, spectroscopy, trace gas analysis and atmospheric chemistry) and are commercially available. )

Probing the density of trap states in the middle of the bandgap using ambipolar organic field-effect transistors

Science.gov (United States)

Häusermann, Roger; Chauvin, Sophie; Facchetti, Antonio; Chen, Zhihua; Takeya, Jun; Batlogg, Bertram

2018-04-01

The number of trap states in the band gap of organic semiconductors directly influences the charge transport as well as the threshold and turn-on voltage. Direct charge transport measurements have been used until now to probe the trap states rather close to the transport level, whereas their number in the middle of the band gap has been elusive. In this study, we use PDIF-CN2, a well known n-type semiconductor, together with vanadium pentoxide electrodes to build ambipolar field-effect transistors. Employing three different methods, we study the density of trap states in the band gap of the semiconductor. These methods give consistent results, and no pool of defect states was found. Additionally, we show first evidence that the number of trap states close to the transport level is correlated with the number of traps in the middle of the band-gap, meaning that a high number of trap states close to the transport level also implies a high number of trap states in the middle of the band gap. This points to a common origin of the trap states over a wide energy range.

Orthorhombic Ti2O3: A Polymorph-Dependent Narrow-Bandgap Ferromagnetic Oxide

KAUST Repository

Li, Yangyang

2017-12-16

Magnetic semiconductors are highly sought in spintronics, which allow not only the control of charge carriers like in traditional electronics, but also the control of spin states. However, almost all known magnetic semiconductors are featured with bandgaps larger than 1 eV, which limits their applications in long-wavelength regimes. In this work, the discovery of orthorhombic-structured Ti2O3 films is reported as a unique narrow-bandgap (≈0.1 eV) ferromagnetic oxide semiconductor. In contrast, the well-known corundum-structured Ti2O3 polymorph has an antiferromagnetic ground state. This comprehensive study on epitaxial Ti2O3 thin films reveals strong correlations between structure, electrical, and magnetic properties. The new orthorhombic Ti2O3 polymorph is found to be n-type with a very high electron concentration, while the bulk-type trigonal-structured Ti2O3 is p-type. More interestingly, in contrast to the antiferromagnetic ground state of trigonal bulk Ti2O3, unexpected ferromagnetism with a transition temperature well above room temperature is observed in the orthorhombic Ti2O3, which is confirmed by X-ray magnetic circular dichroism measurements. Using first-principles calculations, the ferromagnetism is attributed to a particular type of oxygen vacancies in the orthorhombic Ti2O3. The room-temperature ferromagnetism observed in orthorhombic-structured Ti2O3, demonstrates a new route toward controlling magnetism in epitaxial oxide films through selective stabilization of polymorph phases.

Orthorhombic Ti2O3: A Polymorph-Dependent Narrow-Bandgap Ferromagnetic Oxide

KAUST Repository

Li, Yangyang; Weng, Yakui; Yin, Xinmao; Yu, Xiaojiang; Sarath Kumar, S. R.; Wehbe, Nimer; Wu, Haijun; Alshareef, Husam N.; Pennycook, Stephen J.; Breese, Mark B. H.; Chen, Jingsheng; Dong, Shuai; Wu, Tao

2017-01-01

Magnetic semiconductors are highly sought in spintronics, which allow not only the control of charge carriers like in traditional electronics, but also the control of spin states. However, almost all known magnetic semiconductors are featured with bandgaps larger than 1 eV, which limits their applications in long-wavelength regimes. In this work, the discovery of orthorhombic-structured Ti2O3 films is reported as a unique narrow-bandgap (≈0.1 eV) ferromagnetic oxide semiconductor. In contrast, the well-known corundum-structured Ti2O3 polymorph has an antiferromagnetic ground state. This comprehensive study on epitaxial Ti2O3 thin films reveals strong correlations between structure, electrical, and magnetic properties. The new orthorhombic Ti2O3 polymorph is found to be n-type with a very high electron concentration, while the bulk-type trigonal-structured Ti2O3 is p-type. More interestingly, in contrast to the antiferromagnetic ground state of trigonal bulk Ti2O3, unexpected ferromagnetism with a transition temperature well above room temperature is observed in the orthorhombic Ti2O3, which is confirmed by X-ray magnetic circular dichroism measurements. Using first-principles calculations, the ferromagnetism is attributed to a particular type of oxygen vacancies in the orthorhombic Ti2O3. The room-temperature ferromagnetism observed in orthorhombic-structured Ti2O3, demonstrates a new route toward controlling magnetism in epitaxial oxide films through selective stabilization of polymorph phases.

Comparative study of porosification in InAs, InP, ZnSe and ZnCdS

International Nuclear Information System (INIS)

Monaico, Eduard; Tiginyanu, Ion; Nielsch, Kornelius; Ursaki, Veaceslav; Colibaba, Gleb; Nedeoglo, Dmitrii; Cojocaru, Ala; Foell Helmut

2013-01-01

We report on a comparative study of the pore growth during anodization of a narrow-bandgap III-V compound (InAs), a medium-bandgap III-V one (InP) and wide-bandgap II-VI semiconductors (ZnSe and Zn 0,4 Cd 0,6 S). According to the obtained results, the morphology of the porous layers can be controlled by the composition of the electrolyte and the applied electrochemical parameters. It was evidenced that in the narrow bandgap semiconductor InAs it is difficult to control the mechanism of pore growth. Both current line oriented pores and crystallographically oriented pores were produced in the medium-bandgap material InP. The electrochemical nanostructuring of wide-bandgap semiconductors realized in single crystalline high conductivity samples evidenced only current-line oriented pores. This behavior is explained in terms of difference in the values of electronegativity of the constituent atoms and the degree of ionicity. (authors)

Shape and phase evolution from CsPbBr3 perovskite nanocubes to tetragonal CsPb2Br5 nanosheets with an indirect bandgap.

Science.gov (United States)

Li, Guopeng; Wang, Hui; Zhu, Zhifeng; Chang, Yajing; Zhang, Ting; Song, Zihang; Jiang, Yang

2016-09-13

Tetragonal CsPb 2 Br 5 nanosheets were obtained by an oriented attachment of orthorhombic CsPbBr 3 nanocubes, involving a lateral shape evolution from octagonal to square. Meanwhile, the experimental results, together with DFT simulation results, indicated that the tetragonal CsPb 2 Br 5 is an indirect bandgap semiconductor that is PL-inactive with a bandgap of 2.979 eV.

Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

Science.gov (United States)

Su, Ching-Hua; Sha, Yi-Gao

1995-01-01

The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals

KAUST Repository

Abdelhady, Ahmed L.

2016-01-02

Controllable doping of semiconductors is a fundamental technological requirement for electronic and optoelectronic devices. As intrinsic semiconductors, hybrid perovskites have so far been a phenomenal success in photovoltaics. The inability to dope these materials heterovalently (or aliovalently) has greatly limited their wider utilizations in electronics. Here we show an efficient in situ chemical route that achieves the controlled incorporation of trivalent cations (Bi3+, Au3+, or In3+) by exploiting the retrograde solubility behavior of perovskites. We term the new method dopant incorporation in the retrograde regime. We achieve Bi3+ incorporation that leads to bandgap tuning (∼300 meV), 104 fold enhancement in electrical conductivity, and a change in the sign of majority charge carriers from positive to negative. This work demonstrates the successful incorporation of dopants into perovskite crystals while preserving the host lattice structure, opening new avenues to tailor the electronic and optoelectronic properties of this rapidly emerging class of solution-processed semiconductors. © 2016 American Chemical Society.

Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals

KAUST Repository

Abdelhady, Ahmed L.; Saidaminov, Makhsud I.; Banavoth, Murali; Adinolfi, Valerio; Voznyy, Oleksandr; Katsiev, Khabiboulakh; Alarousu, Erkki; Comin, Riccardo; Dursun, Ibrahim; Sinatra, Lutfan; Sargent, Edward H.; Mohammed, Omar F.; Bakr, Osman

2016-01-01

Controllable doping of semiconductors is a fundamental technological requirement for electronic and optoelectronic devices. As intrinsic semiconductors, hybrid perovskites have so far been a phenomenal success in photovoltaics. The inability to dope these materials heterovalently (or aliovalently) has greatly limited their wider utilizations in electronics. Here we show an efficient in situ chemical route that achieves the controlled incorporation of trivalent cations (Bi3+, Au3+, or In3+) by exploiting the retrograde solubility behavior of perovskites. We term the new method dopant incorporation in the retrograde regime. We achieve Bi3+ incorporation that leads to bandgap tuning (∼300 meV), 104 fold enhancement in electrical conductivity, and a change in the sign of majority charge carriers from positive to negative. This work demonstrates the successful incorporation of dopants into perovskite crystals while preserving the host lattice structure, opening new avenues to tailor the electronic and optoelectronic properties of this rapidly emerging class of solution-processed semiconductors. © 2016 American Chemical Society.

Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet.

Science.gov (United States)

Warren, Joshua A; Riddle, Matthew E; Graziano, Diane J; Das, Sujit; Upadhyayula, Venkata K K; Masanet, Eric; Cresko, Joe

2015-09-01

Silicon carbide and gallium nitride, two leading wide band gap semiconductors with significant potential in electric vehicle power electronics, are examined from a life cycle energy perspective and compared with incumbent silicon in U.S. light-duty electric vehicle fleet. Cradle-to-gate, silicon carbide is estimated to require more than twice the energy as silicon. However, the magnitude of vehicle use phase fuel savings potential is comparatively several orders of magnitude higher than the marginal increase in cradle-to-gate energy. Gallium nitride cradle-to-gate energy requirements are estimated to be similar to silicon, with use phase savings potential similar to or exceeding that of silicon carbide. Potential energy reductions in the United States vehicle fleet are examined through several scenarios that consider the market adoption potential of electric vehicles themselves, as well as the market adoption potential of wide band gap semiconductors in electric vehicles. For the 2015-2050 time frame, cumulative energy savings associated with the deployment of wide band gap semiconductors are estimated to range from 2-20 billion GJ depending on market adoption dynamics.

Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis

Science.gov (United States)

Hinuma, Yoyo; Hatakeyama, Taisuke; Kumagai, Yu; Burton, Lee A.; Sato, Hikaru; Muraba, Yoshinori; Iimura, Soshi; Hiramatsu, Hidenori; Tanaka, Isao; Hosono, Hideo; Oba, Fumiyasu

2016-01-01

Nitride semiconductors are attractive because they can be environmentally benign, comprised of abundant elements and possess favourable electronic properties. However, those currently commercialized are mostly limited to gallium nitride and its alloys, despite the rich composition space of nitrides. Here we report the screening of ternary zinc nitride semiconductors using first-principles calculations of electronic structure, stability and dopability. This approach identifies as-yet-unreported CaZn2N2 that has earth-abundant components, smaller carrier effective masses than gallium nitride and a tunable direct bandgap suited for light emission and harvesting. High-pressure synthesis realizes this phase, verifying the predicted crystal structure and band-edge red photoluminescence. In total, we propose 21 promising systems, including Ca2ZnN2, Ba2ZnN2 and Zn2PN3, which have not been reported as semiconductors previously. Given the variety in bandgaps of the identified compounds, the present study expands the potential suitability of nitride semiconductors for a broader range of electronic, optoelectronic and photovoltaic applications. PMID:27325228

Electronic structure characterization and bandgap engineering of solar hydrogen materials

International Nuclear Information System (INIS)

Guo, Jinghua

2007-01-01

Bandgap, band edge positions as well as the overall band structure of semiconductors are of crucial importance in photoelectrochemical and photocatalytic applications. The energy position of the band edge level can be controlled by the electronegativity of the dopants, the pH of the solution (flatband potential variation of 60 mV per pH unit), as well as by quantum confinement effects. Accordingly, band edges and bandgap can be tailored to achieve specific electronic, optical or photocatalytic properties. Synchrotron radiation with photon energy at or below 1 keV is giving new insight into such areas as condensed matter physics and extreme ultraviolet optics technology. In the soft x-ray region, the question tends to be, what are the electrons doing as they migrated between the atoms. In this paper, I will present a number of soft x-ray spectroscopic study of nanostructured 3d metal compounds Fe 2 O 3 and ZnO

Influence of interface preparation on minority carrier lifetime for low bandgap tandem solar cell materials

Energy Technology Data Exchange (ETDEWEB)

Szabo, Nadine; Sagol, B. Erol; Seidel, Ulf; Schwarzburg, Klaus; Hannappel, Thomas [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

2010-07-01

III-V semiconductor compounds grown by MOVPE are implemented in todays state-of-the-art third generation multi-junction solar cells. The current record multi junction solar cell grown on germanium, having Ge, Ga(In)As and GaInP as subcells, reached a record efficiency of 41.6%. The efficiency of these multi junction solar cells could be significantly increased, if its low bandgap Ge subcell would be replaced by a more efficient tandem. For this purpose the low bandgap materials InGaAs and InGaAsP are suitable. The bandgap composition of these materials allows a better yield of the solar spectrum. Based on InGaAs/InGaAsP absorber materials we have developed a low bandgap tandem solar cell with optimized bandgaps. Results of time resolved photoluminescence (TRPL) for the IR-bandgap compounds InGaAsP (1.03 eV)/InGaAs (0.73 eV) are presented. The lifetime of minority carriers is one of the most important properties of solar cell absorber materials. We show on the example of the low band gap tandem cell how the choice of the materials, the quality of the bulk, the optimization of the band gap energies and the preparation of the critical interfaces are essential to build a high efficiency solar cell. The quality of the bulk and the preparation of the critical interfaces are essential for the growth of the double heterostructure (DHS).

Inorganic p-Type Semiconductors: Their Applications and Progress in Dye-Sensitized Solar Cells and Perovskite Solar Cells

Directory of Open Access Journals (Sweden)

Ming-Hsien Li

2016-04-01

Full Text Available Considering the increasing global demand for energy and the harmful ecological impact of conventional energy sources, it is obvious that development of clean and renewable energy is a necessity. Since the Sun is our only external energy source, harnessing its energy, which is clean, non-hazardous and infinite, satisfies the main objectives of all alternative energy strategies. With attractive features, i.e., good performance, low-cost potential, simple processibility, a wide range of applications from portable power generation to power-windows, photoelectrochemical solar cells like dye-sensitized solar cells (DSCs represent one of the promising methods for future large-scale power production directly from sunlight. While the sensitization of n-type semiconductors (n-SC has been intensively studied, the use of p-type semiconductor (p-SC, e.g., the sensitization of wide bandgap p-SC and hole transport materials with p-SC have also been attracting great attention. Recently, it has been proved that the p-type inorganic semiconductor as a charge selective material or a charge transport material in organometallic lead halide perovskite solar cells (PSCs shows a significant impact on solar cell performance. Therefore the study of p-type semiconductors is important to rationally design efficient DSCs and PSCs. In this review, recent published works on p-type DSCs and PSCs incorporated with an inorganic p-type semiconductor and our perspectives on this topic are discussed.

Zinc Alloys for the Fabrication of Semiconductor Devices

Science.gov (United States)

Ryu, Yungryel; Lee, Tae S.

2009-01-01

ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and

Rational Design of High-Performance Wide-Bandgap (≈2 eV) Polymer Semiconductors as Electron Donors in Organic Photovoltaics Exhibiting High Open Circuit Voltages (≈1 V).

Science.gov (United States)

Chochos, Christos L; Katsouras, Athanasios; Gasparini, Nicola; Koulogiannis, Chrysanthos; Ameri, Tayebeh; Brabec, Christoph J; Avgeropoulos, Apostolos

2017-01-01

Systematic optimization of the chemical structure of wide-bandgap (≈2.0 eV) "donor-acceptor" copolymers consisting of indacenodithiophene or indacenodithieno[3,2-b]thiophene as the electron-rich unit and thieno[3,4-c]pyrrole-4,6-dione as the electron-deficient moiety in terms of alkyl side chain engineering and distance of the electron-rich and electron-deficient monomers within the repeat unit of the polymer chain results in high-performance electron donor materials for organic photovoltaics. Specifically, preliminary results demonstrate extremely high open circuit voltages (V oc s) of ≈1.0 V, reasonable short circuit current density (J sc ) of around 11 mA cm -2 , and moderate fill factors resulting in efficiencies close to 6%. All the devices are fabricated in an inverted architecture with the photoactive layer processed by doctor blade equipment, showing the compatibility with roll-to-roll large-scale manufacturing processes. From the correlation of the chemical structure-optoelectronic properties-photovoltaic performance, a rational guide toward further optimization of the chemical structure in this family of copolymers, has been achieved. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

Science.gov (United States)

Hsiao, F.-M.; Schnedler, M.; Portz, V.; Huang, Y.-C.; Huang, B.-C.; Shih, M.-C.; Chang, C.-W.; Tu, L.-W.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, Ph.; Chiu, Y.-P.

2017-01-01

We demonstrate the potential of sub-bandgap laser-excited cross-sectional scanning tunneling microscopy and spectroscopy to investigate the presence of defect states in semiconductors. The characterization method is illustrated on GaN layers grown on Si(111) substrates without intentional buffer layers. According to high-resolution transmission electron microscopy and cathodoluminescence spectroscopy, the GaN layers consist of nanoscale wurtzite and zincblende crystallites with varying crystal orientations and hence contain high defect state densities. In order to discriminate between band-to-band excitation and defect state excitations, we use sub-bandgap laser excitation. We probe a clear increase in the tunnel current at positive sample voltages during sub-bandgap laser illumination for the GaN layer with high defect density, but no effect is found for high quality GaN epitaxial layers. This demonstrates the excitation of free charge carriers at defect states. Thus, sub-bandgap laser-excited scanning tunneling spectroscopy is a powerful complimentary characterization tool for defect states.

Metal-optic and Plasmonic Semiconductor-based Nanolasers

Science.gov (United States)

2012-05-07

after, 65 the sample was placed into a load-lock to deposit 5 nm of titanium dioxide. The tita - nium dioxide serves as a dielectric (although it is a...into a load-lock to deposit 5 nm of titanium dioxide. The tita - nium dioxide serves as a dielectric (although it is a large-bandgap semiconductor) to

Compound Semiconductor Radiation Detector

International Nuclear Information System (INIS)

Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

2005-01-01

In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps

Science.gov (United States)

Wanlass, Mark W [Golden, CO; Mascarenhas, Angelo [Lakewood, CO

2012-05-08

Modeling a monolithic, multi-bandgap, tandem, solar photovoltaic converter or thermophotovoltaic converter by constraining the bandgap value for the bottom subcell to no less than a particular value produces an optimum combination of subcell bandgaps that provide theoretical energy conversion efficiencies nearly as good as unconstrained maximum theoretical conversion efficiency models, but which are more conducive to actual fabrication to achieve such conversion efficiencies than unconstrained model optimum bandgap combinations. Achieving such constrained or unconstrained optimum bandgap combinations includes growth of a graded layer transition from larger lattice constant on the parent substrate to a smaller lattice constant to accommodate higher bandgap upper subcells and at least one graded layer that transitions back to a larger lattice constant to accommodate lower bandgap lower subcells and to counter-strain the epistructure to mitigate epistructure bowing.

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

Science.gov (United States)

Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

2014-06-01

The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

Optically reversible electrical soft-breakdown in wide-bandgap oxides—A factorial study

Science.gov (United States)

Zhou, Y.; Ang, D. S.; Kalaga, P. S.

2018-04-01

In an earlier work, we found that an electrical soft-breakdown region in wide-bandgap oxides, such as hafnium dioxide, silicon dioxide, etc., could be reversed when illuminated by white light. The effect is evidenced by a decrease in the breakdown leakage current, termed as a negative photoconductivity response. This finding raises the prospect for optical sensing applications based on these traditionally non-photo-responsive but ubiquitous oxide materials. In this study, we examine the statistical distribution for the rate of breakdown reversal as well as the influence of factors such as wavelength, light intensity, oxide stoichiometry (or oxygen content) and temperature on the reversal rate. The rate of breakdown reversal is shown to be best described by the lognormal distribution. Light in the range of ˜400-700 nm is found to have relatively little influence on the reversal rate. On the other hand, light intensity, oxygen content and temperature, each of them has a clear impact; a stronger light intensity, an oxide that is richer in oxygen content and a reduced temperature all speed up the reversal process substantially. These experimental results are consistent with the proposed phenomenological redox model involving photo-assisted recombination of the surrounding oxygen interstitials with vacancy defects in the breakdown path.

Pramana – Journal of Physics | Indian Academy of Sciences

Indian Academy of Sciences (India)

2014-02-12

Feb 12, 2014 ... Research studies on quantum dots (QDs) of semiconductor materials are of potential interest in present days having promising applications in different optoelectronic devices. Among other materials, ZnS is a direct bandgap semiconductor material having a wide bandgap of 3.6 eV for its cubic phase at ...

Empirical temperature dependence of the refractive index of semiconductors

NARCIS (Netherlands)

Herve, P.J.L.; Vandamme, L.K.J.

1995-01-01

Values of the temperature coefficient of the refractive index were obtained from the derivation of a simple relation between energy band-gap and refractive index in semiconductors. These values, (dn/dT)/n, were compared to the experimental data found in literature. Our model, with only one fitting

The Wide Band-Gap Semiconductors: A Brief Survey | Ottaviani ...

African Journals Online (AJOL)

... the fields of power electronics, high-energy radiation detection and optoelectronics. ... Among these properties, a lower intrinsic carrier concentration than in silicon, a higher thermal conductivity, a larger saturated electron drift velocity and a ...

Advanced electron microscopy of wide band-gap semiconductor materials

International Nuclear Information System (INIS)

Fay, M.W.

2000-10-01

The microstructure of GaN layers grown by metal organic vapour phase epitaxy on (0001) sapphire substrates using a novel precursor for deposition of AlN buffer layers has been investigated and compared to layers grown using low temperature GaN buffer layers and state-of-the-art material. It has been shown that the quality of layers grown using the novel precursor is comparable to the state-of-the-art material. TEM analysis has been performed of multiple quantum wells of InGaN grown within GaN epitaxial layers by metal organic vapour phase epitaxy. Elementally sensitive TEM techniques have been used to determine the spatial distribution of In and Ga within these structures. Fluctuations in In sensitive images are observed on the nm-scale. Clear evidence of segregation of In during layer growth has been seen. Models of the In segregation are in good agreement with experimental results. Elementally sensitive techniques have been used to investigate the elemental distributions in TiAl and NiAu contacts to GaN. Annealing of TiAl contacts has been seen to result in the formation of a thin interfacial Ti rich phase, and of N depletion at the surface of the GaN layer to the depth of tens of nm. Annealing NiAu contacts at 700 deg. C was seen to result in the formation of Ga-rich interfacial phases, of both crystalline and amorphous structure. ZnS and ZnCdS layers grown on (001) GaP supplied by the University of Hull have been investigated. ZnS layers were found to contain a high density of inclined stacking faults throughout the layer, originating from the interface with the substrate. Energy sensitive techniques have been used to investigate ZnCdS quantum well structures. The use of a ZnCdS superlattice structure around a ZnCdS quantum well to approximate a reduced barrier was seen to result in less thickness variations than when no barrier was used. (author)

Anhydrous crystals of DNA bases are wide gap semiconductors.

Science.gov (United States)

Maia, F F; Freire, V N; Caetano, E W S; Azevedo, D L; Sales, F A M; Albuquerque, E L

2011-05-07

We present the structural, electronic, and optical properties of anhydrous crystals of DNA nucleobases (guanine, adenine, cytosine, and thymine) found after DFT (Density Functional Theory) calculations within the local density approximation, as well as experimental measurements of optical absorption for powders of these crystals. Guanine and cytosine (adenine and thymine) anhydrous crystals are predicted from the DFT simulations to be direct (indirect) band gap semiconductors, with values 2.68 eV and 3.30 eV (2.83 eV and 3.22 eV), respectively, while the experimentally estimated band gaps we have measured are 3.83 eV and 3.84 eV (3.89 eV and 4.07 eV), in the same order. The electronic effective masses we have obtained at band extremes show that, at low temperatures, these crystals behave like wide gap semiconductors for electrons moving along the nucleobases stacking direction, while the hole transport are somewhat limited. Lastly, the calculated electronic dielectric functions of DNA nucleobases crystals in the parallel and perpendicular directions to the stacking planes exhibit a high degree of anisotropy (except cytosine), in agreement with published experimental results.

Structural, optical, and electronic studies of wide-bandgap lead halide perovskites

KAUST Repository

Comin, Riccardo; Walters, Grant; Thibau, Emmanuel Sol; Voznyy, Oleksandr; Lu, Zheng-Hong; Sargent, Edward H.

2015-01-01

© The Royal Society of Chemistry 2015. We investigate the family of mixed Br/Cl organolead halide perovskites which enable light emission in the blue-violet region of the visible spectrum. We report the structural, optical and electronic properties of this air-stable family of perovskites, demonstrating full bandgap tunability in the 400-550 nm range and enhanced exciton strength upon Cl substitution. We complement this study by tracking the evolution of the band levels across the gap, thereby providing a foundational framework for future optoelectronic applications of these materials.

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Directory of Open Access Journals (Sweden)

Valeri V. Afanas'ev

2014-01-01

Full Text Available Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge, Si1-xGex, Ge1-xSnx and AIIIBV group (GaAs, InxGa1-xAs, InAs, GaP, InP, GaSb, InSb materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than ≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

Key techniques for space-based solar pumped semiconductor lasers

Science.gov (United States)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

New developments in photoconductive detectors (invited)

International Nuclear Information System (INIS)

Han, S.

1997-01-01

Nearly ideal for detecting ionizing radiation, wide band-gap semiconductors present a possibility of having outstanding radiation hardness, fast charge collection, and low leakage current that will allow them to be used in high radiation, high temperature, and chemically aggressive environments. Over the past few years, the improvements in the electrical quality of wide band-gap semiconductors have progressed enormously. One particular wide band-gap semiconductor, diamond, has properties that may be ideal for radiation detection. Since the discovery of low pressure and low temperature deposition of diamond, the possibility of large area diamond films has become a reality. Over the past few years, great progress has been made in advancing the electrical quality of chemical-vapor-deposited (CVD) diamond. Presently, unprecedented diamond wafer size of 7 in. diam is possible. Due to both the present electrical quality and the available size, the utilization of diamond in radiation detection applications is not just a dream but a reality. The progression of CVD diamond close-quote s electrical properties in the last few years will be presented along with what is currently possible. Applications of CVD diamond for the National Ignition Facility (NIF) diagnostics will be reviewed. In addition, a brief review concerning other possible wide band-gap semiconductors for ICF diagnostics will be presented. copyright 1997 American Institute of Physics

Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

Science.gov (United States)

Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

2016-03-01

Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

Semiconductor high-energy radiation scintillation detector

International Nuclear Information System (INIS)

Kastalsky, A.; Luryi, S.; Spivak, B.

2006-01-01

We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

Wave mechanics applied to semiconductor heterostructures

International Nuclear Information System (INIS)

Bastard, G.

1990-01-01

This book examines the basic electronic and optical properties of two dimensional semiconductor heterostructures based on III-V and II-VI compounds. The book explores various consequences of one-dimensional size-quantization on the most basic physical properties of heterolayers. Beginning with basic quantum mechanical properties of idealized quantum wells and superlattices, the book discusses the occurrence of bound states when the heterostructure is imperfect or when it is shone with near bandgap light

Towards time-of-flight PET with a semiconductor detector

Science.gov (United States)

Ariño-Estrada, Gerard; Mitchell, Gregory S.; Kwon, Sun Il; Du, Junwei; Kim, Hadong; Cirignano, Leonard J.; Shah, Kanai S.; Cherry, Simon R.

2018-02-01

The feasibility of using Cerenkov light, generated by energetic electrons following 511 keV photon interactions in the semiconductor TlBr, to obtain fast timing information for positron emission tomography (PET) was evaluated. Due to its high refractive index, TlBr is a relatively good Cerenkov radiator and with its wide bandgap, has good optical transparency across most of the visible spectrum. Coupling an SiPM photodetector to a slab of TlBr (TlBr-SiPM) yielded a coincidence timing resolution of 620 ps FWHM between the TlBr-SiPM detector and a LFS reference detector. This value improved to 430 ps FWHM by applying a high pulse amplitude cut based on the TlBr-SiPM and reference detector signal amplitudes. These results are the best ever achieved with a semiconductor PET detector and already approach the performance required for time-of-flight. As TlBr has higher stopping power and better energy resolution than the conventional scintillation detectors currently used in PET scanners, a hybrid TlBr-SiPM detector with fast timing capability becomes an interesting option for further development.

Coupled-resonator-induced plasmonic bandgaps.

Science.gov (United States)

Wang, Yujia; Sun, Chengwei; Gong, Qihuang; Chen, Jianjun

2017-10-15

By drawing an analogy with the conventional photonic crystals, the plasmonic bandgaps have mainly employed the periodic metallic structures, named as plasmonic crystals. However, the sizes of the plasmonic crystals are much larger than the wavelengths, and the large sizes considerably decrease the density of the photonic integration circuits. Here, based on the coupled-resonator effect, the plasmonic bandgaps are experimentally realized in the subwavelength waveguide-resonator structure, which considerably decreases the structure size to subwavelength scales. An analytic model and the phase analysis are established to explain this phenomenon. Both the experiment and simulation show that the plasmonic bandgap structure has large fabrication tolerances (>20%). Instead of the periodic metallic structures in the bulky plasmonic crystals, the utilization of the subwavelength plasmonic waveguide-resonator structure not only significantly shrinks the bandgap structure to be about λ 2 /13, but also expands the physics of the plasmonic bandgaps. The subwavelength dimension, together with the waveguide configuration and robust realization, makes the bandgap structure easy to be highly integrated on chips.

Ultrasensitive tunability of the direct bandgap of 2D InSe flakes via strain engineering

Science.gov (United States)

Li, Yang; Wang, Tianmeng; Wu, Meng; Cao, Ting; Chen, Yanwen; Sankar, Raman; Ulaganathan, Rajesh K.; Chou, Fangcheng; Wetzel, Christian; Xu, Cheng-Yan; Louie, Steven G.; Shi, Su-Fei

2018-04-01

InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We, for the first time, exploit strain to drastically modify the bandgap of two-dimensional (2D) InSe nanoflakes. We demonstrated that we could decrease the bandgap of a few-layer InSe flake by 160 meV through applying an in-plane uniaxial tensile strain to 1.06% and increase the bandgap by 79 meV through applying an in-plane uniaxial compressive strain to 0.62%, as evidenced by photoluminescence (PL) spectroscopy. The large reversible bandgap change of ~239 meV arises from a large bandgap change rate (bandgap strain coefficient) of few-layer InSe in response to strain, ~154 meV/% for uniaxial tensile strain and ~140 meV/% for uniaxial compressive strain, representing the most pronounced uniaxial strain-induced bandgap strain coefficient experimentally reported in 2D materials. We developed a theoretical understanding of the strain-induced bandgap change through first-principles DFT and GW calculations. We also confirmed the bandgap change by photoconductivity measurements using excitation light with different photon energies. The highly tunable bandgap of InSe in the infrared regime should enable a wide range of applications, including electro-mechanical, piezoelectric and optoelectronic devices.

Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

International Nuclear Information System (INIS)

Bory, Benjamin F.; Meskers, Stefan C. J.; Rocha, Paulo R. F.; Gomes, Henrique L.; Leeuw, Dago M. de

2015-01-01

Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10 17  m −2 . We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching

Semiconductors: Still a Wide Open Frontier for Scientists/Engineers

Science.gov (United States)

Seiler, David G.

1997-10-01

A 1995 Business Week article described several features of the explosive use of semiconductor chips today: ``Booming'' personal computer markets are driving high demand for microprocessors and memory chips; (2) New information superhighway markets will `ignite' sales of multimedia and communication chips; and (3) Demand for digital-signal-processing and data-compression chips, which speed up video and graphics, is `red hot.' A Washington Post article by Stan Hinden said that technology is creating an unstoppable demand for electronic elements. This ``digital pervasiveness'' means that a semiconductor chip is going into almost every high-tech product that people buy - cars, televisions, video recorders, telephones, radios, alarm clocks, coffee pots, etc. ``Semiconductors are everywhere.'' Silicon and compound semiconductors are absolutely essential and are pervasive enablers for DoD operations and systems. DoD's Critical Technologies Plan of 1991 says that ``Semiconductor materials and microelectronics are critically important and appropriately lead the list of critical defense technologies.'' These trends continue unabated. This talk describes some of the frontiers of semiconductors today and shows how scientists and engineers can effectively contribute to its advancement. Cooperative, multidisciplinary efforts are increasing. Specific examples will be given for scanning capacitance microscopy and thin-film metrology.

Selective photochemical dry etching of compound semiconductors

International Nuclear Information System (INIS)

Ashby, C.I.H.

1988-01-01

When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

Etch Pit Studies of II-VI-Wide Bandgap Semiconductor Materials ZnSe, ZnCdSe, and ZnCdMgSe Grown on InP

National Research Council Canada - National Science Library

Semendy, Fred

1999-01-01

Etch pit density (EPD) determination studies have been conducted on II-VI semiconductor materials ZnSe, ZnCdSe, and ZnCdMgSe grown on InP surfaces for the first time by using various etching solutions under different...

Direct femtosecond observation of charge carrier recombination in ternary semiconductor nanocrystals: The effect of composition and shelling

KAUST Repository

Bose, Riya; Ahmed, Ghada H.; Alarousu, Erkki; Parida, Manas R.; Abdelhady, Ahmed L.; Bakr, Osman; Mohammed, Omar F.

2015-01-01

Heavy-metal free ternary semiconductor nanocrystals are emerging as key materials in photoactive applications. However, the relative abundance of intra-bandgap defect states and lack of understanding of their origins within this class

Structural correlations in the generation of polaron pairs in low-bandgap polymers for photovoltaics

Science.gov (United States)

Tautz, Raphael; da Como, Enrico; Limmer, Thomas; Feldmann, Jochen; Egelhaaf, Hans-Joachim; von Hauff, Elizabeth; Lemaur, Vincent; Beljonne, David; Yilmaz, Seyfullah; Dumsch, Ines; Allard, Sybille; Scherf, Ullrich

2012-07-01

Polymeric semiconductors are materials where unique optical and electronic properties often originate from a tailored chemical structure. This allows for synthesizing conjugated macromolecules with ad hoc functionalities for organic electronics. In photovoltaics, donor-acceptor co-polymers, with moieties of different electron affinity alternating on the chain, have attracted considerable interest. The low bandgap offers optimal light-harvesting characteristics and has inspired work towards record power conversion efficiencies. Here we show for the first time how the chemical structure of donor and acceptor moieties controls the photogeneration of polaron pairs. We show that co-polymers with strong acceptors show large yields of polaron pair formation up to 24% of the initial photoexcitations as compared with a homopolymer (η=8%). π-conjugated spacers, separating the donor and acceptor centre of masses, have the beneficial role of increasing the recombination time. The results provide useful input into the understanding of polaron pair photogeneration in low-bandgap co-polymers for photovoltaics.

Bandgap Engineering of 1300 nm Quantum Dots/Quantum Well Nanostructures Based Devices

KAUST Repository

Alhashim, Hala H.

2016-05-29

The main objectives of this thesis are to develop viable process and/or device technologies for bandgap tuning of 1300-nm InGaAs/GaAs quantum-dot (QD) laser structures, and broad linewidth 1300-nm InGaAsP/InP quantum well (QW) superluminescent diode structures. The high performance bandgap-engineered QD laser structures were achieved by employing quantum-dot intermixing (QDI) based on impurity free vacancy diffusion (IFVD) technique for eventual seamless active-passive integration, and bandgap-tuned lasers. QDI using various dielectric-capping materials, such as HfO2, SrTiO3, TiO2, Al2O3 and ZnO, etc, were experimented in which the resultant emission wavelength can be blueshifted to ∼ 1100 nm ─ 1200 nm range depending on process conditions. The significant results extracted from the PL characterization were used to perform an extensive laser characterization. The InAs/GaAs quantum-dot lasers with QDs transition energies were blueshifted by ~185 nm, and lasing around ~1070 – 1190 nm was achieved. Furthermore, from the spectral analysis, a simultaneous five-state lasing in the InAs/InGaAs intermixed QD laser was experimentally demonstrated for the first time in the very important wavelength range from 1030 to 1125 nm. The QDI methodology enabled the facile formation of a plethora of devices with various emission wavelengths suitable for a wide range of applications in the infrared. In addition, the wavelength range achieved is also applicable for coherent light generation in the green – yellow – orange visible wavelength band via frequency doubling, which is a cost-effective way of producing compact devices for pico-projectors, semiconductor laser based solid state lighting, etc. [1, 2] In QW-based superluminescent diode, the problem statement lies on achieving a flat-top and ultra-wide emission bandwidth. The approach was to design an inhomogeneous active region with a comparable simultaneous emission from different transition states in the QW stacks, in

Wide Band-Gap Semiconductors. 1991 Materials Research Society Symposium Proceedings

Science.gov (United States)

1992-09-01

ORIGIN OF POLYTYPES IN SiC AND ZnS 507 Volker Heine, C. Cheng, G.E. Engel, and R.I. Needs EPITAXIAL MONOCRYSTALLINE SiC FILMS GROWN ON Si BY LOW...carbon film component. INTRODUCTION One of the most challenging problems in diamond film research has been the growth of high quality, monocrystalline ...developing ZnS EL full color flat panel displays is that the insufficient intensity of blue light emission ( two orders of magnitude lower than that of red

High-Temperature Ferromagnetism in Transition Metal Implanted Wide-Bandgap Semiconductors

Science.gov (United States)

2005-07-01

Mn)As and Its Heterostructures,” Acta Physica Polonica A, 94 (2):155–164 (August 1998). 79. Ohno, Y., D. K. Young, B. Beschoten, F. Matsukura, H. Ohno...reactive molecular-beam epitaxy,” Physical Review B , 67 (16):16205 (April 2003). 26. Dietl, T. “From Magnetic Polarons to Ferromagnetism,” Acta Physica ...samples,” Physica B , 308-310 :985–988 (December 2001). 15. Bradley, F. N. Materials for Magnetic Functions (First Edition). New York: Hayden, 1971. 16

Laser action on rare earth doped nitride semiconductor thin layers

International Nuclear Information System (INIS)

Oussif, A.; Diaf, M.

2010-01-01

Complete text of publication follows. The structure, chemical composition, properties, and their relationships in solids lay the foundation of materials science. Recently, great interest in rare-earth (RE)-doped wide-bandgap semiconductors, which combine the electronic properties of semiconductors with the unique luminescence features of RE ions, is from the fundamental standpoint of structure-composition-properties of solids. At first, a significant amount of work has been reported on the study of infrared emissions from Er 3+- doped semiconductors because Er 3+ exhibits luminescence at 1.54 μm, a wavelength used in optical communications. Since Steckl and Birkhahn first reported visible emission associated with Er from GaN:Er films, the RE-doped semiconductors have received considerable interest for possible application in light emitting devices. Molecular-beam epitaxy (MBE) and metalorganic chemical vapour deposition (MOCVD) have been used mainly to grow GaN host films. The RE dopants were typically incorporated into the host films by in situ doping during the growth or by ion implantation after the growth. GaN doped with rare-earth elements (RE) hold significant potential for applications in optical devices, since they show sharp intense luminescence which is only minimally affected by temperature variations. Among the various RE dopants, Eu seems to be the most interesting, since it yields red luminescence 622 nm which has not been realized in commercially available light emitting devices (LEDs) that use InGaN active layers. We have earlier reported single crystalline growth of Eu-doped GaN and nearly temperature independent red luminescence at 622 nm originating from the intra-4f-4f transition of the Eu 3+ ion. The red luminescence was analyzed and determined to be generated through trap-level-mediated energy transfer from the semiconductor host.

Wide Band-Gap 3,4-Difluorothiophene-Based Polymer with 7% Solar Cell Efficiency: an Alternative to P3HT

KAUST Repository

Wolf, Jannic Sebastian; Cruciani, Federico; El Labban, Abdulrahman; Beaujuge, Pierre

2015-01-01

We report on a wide band-gap polymer donor composed of benzo[1,2-b:4,5-b']dithiophene (BDT) and 3,4-difluorothiophene ([2F]T) units (Eopt ~2.1 eV), and show that the fluorinated analog PBDT[2F]T performs significantly better than its non-fluorinated counterpart PBDT[2H]T in BHJ solar cells with PC71BM. While control P3HT- and PBDT[2H]T-based devices yield PCEs of ca. 4% and 3% (Max.) respectively, PBDT[2F]T-based devices reach PCEs of ca. 7%, combining a large Voc of ca. 0.9 V and short-circuit current values (ca. 10.7 mA/cm2) comparable to those of the best P3HT-based control devices.

Wide Band-Gap 3,4-Difluorothiophene-Based Polymer with 7% Solar Cell Efficiency: an Alternative to P3HT

KAUST Repository

Wolf, Jannic Sebastian

2015-05-27

We report on a wide band-gap polymer donor composed of benzo[1,2-b:4,5-b\\']dithiophene (BDT) and 3,4-difluorothiophene ([2F]T) units (Eopt ~2.1 eV), and show that the fluorinated analog PBDT[2F]T performs significantly better than its non-fluorinated counterpart PBDT[2H]T in BHJ solar cells with PC71BM. While control P3HT- and PBDT[2H]T-based devices yield PCEs of ca. 4% and 3% (Max.) respectively, PBDT[2F]T-based devices reach PCEs of ca. 7%, combining a large Voc of ca. 0.9 V and short-circuit current values (ca. 10.7 mA/cm2) comparable to those of the best P3HT-based control devices.

Wide-range tunable bandgap in Bi1−xCaxFe1−yTiyO3−δ nanoparticles via oxygen vacancy induced structural modulations at room temperature

International Nuclear Information System (INIS)

Mocherla, Pavana S V; Sudakar, C; Gautam, Sanjeev; Chae, Keun Hwa; Rao, M S Ramachandra

2015-01-01

We demonstrate that oxygen vacancies (V O ) produced by aliovalent (Ca 2+ ) doping in BiFeO 3 (BCFO) and associated structural changes due to V O ordering result in systematic alteration of the bandgap (E g ) over a wide range from 1.5 eV to 2.3 eV. By contrast, the change in the bandgap of a Ca 2+ and Ti 4+ co-doped BiFeO 3 (BCFTO) system, wherein the V O formation is suppressed, is negligible. These contrastive results strongly confirm the role of oxygen vacancies in altering the bandgap of BCFO. Irrespective of doping, microstrain, which is found to be large (0.3 to 1.2%) below a critical size (d c ∼ 60 nm) also produces a small, yet linear change in the bandgap (E g from 2.0 to 2.3 eV). The cubic phase stabilizes gradually in BCFO for x > 0.1 through an orthorhombic phase (for 0.05 < x < 0.1), whereas it directly transforms for x > 0.1 in BCFTO. This change in BCFO at 300 K suggests a high-pressure-like (or high-temperature-like) effect of the oxygen vacancies and dopants on the structure. Systematic variations in the relative intensities and peak positions of Fe d–d transitions in BCFO reveal the local changes in Fe–O–Fe coordination. These results along with XANES and HRTEM studies substantiate the observed structural changes. (paper)

Micro-Raman spectroscopy as a tool for the characterization of silicon carbide in power semiconductor material processing

Science.gov (United States)

De Biasio, M.; Kraft, M.; Schultz, M.; Goller, B.; Sternig, D.; Esteve, R.; Roesner, M.

2017-05-01

Silicon carbide (SiC) is a wide band-gap semi-conductor material that is used increasingly for high voltage power devices, since it has a higher breakdown field strength and better thermal conductivity than silicon. However, in particular its hardness makes wafer processing difficult and many standard semi-conductor processes have to be specially adapted. We measure the effects of (i) mechanical processing (i.e. grinding of the backside) and (ii) chemical and thermal processing (i.e. doping and annealing), using confocal microscopy to measure the surface roughness of ground wafers and micro-Raman spectroscopy to measure the stresses induced in the wafers by grinding. 4H-SiC wafers with different dopings were studied before and after annealing, using depth-resolved micro-Raman spectroscopy to observe how doping and annealing affect: i.) the damage and stresses induced on the crystalline structure of the samples and ii.) the concentration of free electrical carriers. Our results show that mechanical, chemical and thermal processing techniques have effects on this semiconductor material that can be observed and characterized using confocal microscopy and high resolution micro Raman spectroscopy.

Tunable bandgaps in a deployable metamaterial

Science.gov (United States)

Nanda, Aditya; Karami, M. A.

2018-06-01

In this manuscript, we investigate deployable structures (such as solar arrays) and origami-inspired foldable structures as metamaterials capable of tunable wave manipulation. Specifically, we present a metamaterial whose bandgaps can be modulated by changing the fold angle of adjacent panels. The repeating unit cell of the structure consists of a beam (representing a panel) and a torsional spring (representing the folding mechanism). Two important cases are considered. Firstly, the fold angle (angle between adjacent beams), Ψ, is zero and only flexural waves propagate. In the second case, the fold angle is greater than zero (Ψ > 0). This causes longitudinal and transverse vibration to be coupled. FEM models are used to validate both these analyses. Increasing the fold angle was found to inflict notable changes to the wave transmission characteristics of the structure. In general, increasing the fold angles caused the bandwidth of bandgaps to increase. For the lowest four bandgaps we found bandwidth increases of 252 %, 177 %, 230 % and 163 % respectively at Ψ = 90 deg (relative to the bandwidths at Ψ = 0). In addition, non-trivial increases in bandwidth of the odd-numbered bandgaps occurs even at small fold angles-the bandwidth for the first and third bandgaps effectively double in size (increase by 100 %) at Ψ = 20 deg relative to those at Ψ = 0. This could have ramifications in the context of tunable wave manipulation and adaptive filtering. In addition, by expanding out the characteristic equation of transfer matrix for the straight structure, we prove that the upper band edge of the nth bandgap will always equal the nth simply supported natural frequency of the constituent beam. Further, we found that the ratio (EI/kt) is a pertinent parameter affecting the bandwidth of bandgaps. For low values of the ratio, effectively, no bandgap exists. For higher values of the ratio (EI/kt), we obtain a relatively large bandgap over which no waves propagate. This can

Band-engineering of TiO2 as a wide-band gap semiconductor using organic chromophore dyes

Science.gov (United States)

Wahyuningsih, S.; Kartini, I.; Ramelan, A. H.; Saputri, L. N. M. Z.; Munawaroh, H.

2017-07-01

Bond-engineering as applied to semiconductor materials refers to the manipulation of the energy bands in order to control charge transfer processes in a device. When the device in question is a photoelectrochemical cell, the charges affected by drift become the focus of the study. The ideal band gap of semiconductors for enhancement of photocatalyst activity can be lowered to match with visible light absorption and the location of conduction Band (CB) should be raised to meet the reducing capacity. Otherwise, by the addition of the chromofor organic dyes, the wide-band gab can be influences by interacation resulting between TiO2 surface and the dyes. We have done the impruvisation wide-band gap of TiO2 by the addition of organic chromophore dye, and the addition of transition metal dopand. The TiO2 morphology influence the light absorption as well as the surface modification. The organic chromophore dye was syntesized by formation complexes compound of Co(PAR)(SiPA)(PAR)= 4-(2-piridylazoresorcinol), SiPA = Silyl propil amine). The result showed that the chromophore groups adsorbed onto TiO2 surface can increase the visible light absorption of wide-band gab semiconductor. Initial absorption of a chromophore will affect light penetration into the material surfaces. The use of photonic material as a solar cell shows this phenomenon clearly from the IPCE (incident photon to current conversion efficiency) measurement data. Organic chromophore dyes of Co(PAR)(SiPA) exhibited the long wavelength absorption character compared to the N719 dye (from Dyesol).

Sub-bandgap response of graphene/SiC Schottky emitter bipolar phototransistor examined by scanning photocurrent microscopy

Science.gov (United States)

Barker, Bobby G., Jr.; Chava, Venkata Surya N.; Daniels, Kevin M.; Chandrashekhar, M. V. S.; Greytak, Andrew B.

2018-01-01

Graphene layers grown epitaxially on SiC substrates are attractive for a variety of sensing and optoelectronic applications because the graphene acts as a transparent, conductive, and chemically responsive layer that is mated to a wide-bandgap semiconductor with large breakdown voltage. Recent advances in control of epitaxial growth and doping of SiC epilayers have increased the range of electronic device architectures that are accessible with this system. In particular, a recently-introduced Schottky-emitter bipolar phototransistor (SEPT) based on an epitaxial graphene (EG) emitter grown on a p-SiC base epilayer has been found to exhibit a maximum common emitter current gain of 113 and a UV responsivity of 7.1 A W-1. The behavior of this device, formed on an n +-SiC substrate that serves as the collector, was attributed to a very large minority carrier injection efficiency at the EG/p-SiC Schottky contact. This large minority carrier injection efficiency is in turn related to the large built-in potential found at a EG/p-SiC Schottky junction. The high performance of this device makes it critically important to analyze the sub bandgap visible response of the device, which provides information on impurity states and polytype inclusions in the crystal. Here, we employ scanning photocurrent microscopy (SPCM) with sub-bandgap light as well as a variety of other techniques to clearly demonstrate a localized response based on the graphene transparent electrode and an approximately 1000-fold difference in responsivity between 365 nm and 444 nm excitation. A stacking fault propagating from the substrate/epilayer interface, assigned as a single layer of the 8H-SiC polytype within the 4H-SiC matrix, is found to locally increase the photocurrent substantially. The discovery of this polytype heterojunction opens the potential for further development of heteropolytype devices based on the SEPT architecture.

Electric field and substrate–induced modulation of spin-polarized transport in graphene nanoribbons on A3B5 semiconductors

International Nuclear Information System (INIS)

Ilyasov, Victor V.; Nguyen, Chuong V.; Ershov, Igor V.; Hieu, Nguyen N.

2015-01-01

In this work, we present the density functional theory calculations of the effect of an oriented electric field on the electronic structure and spin-polarized transport in a one dimensional (1D) zigzag graphene nanoribbon (ZGNR) channel placed on a wide bandgap semiconductor of the A3B5 type. Our calculations show that carrier mobility in the 1D semiconductor channel of the ZGNR/A3B5(0001) type is in the range from 1.7×10 4 to 30.5×10 4 cm 2 /Vs and can be controlled by an electric field. In particular, at the critical value of the positive potential, even though hole mobility in an one-dimensional 8-ZGNR/h-BN semiconductor channel for spin down electron subsystems is equal to zero, hole mobility can be increased to 4.1×10 5 cm 2 /Vs for spin up electron subsystems. We found that band gap and carrier mobility in a 1D semiconductor channel of the ZGNR/A3B5(0001) type depend strongly on an external electric field. With these extraordinary properties, ZGNR/A3B5(0001) can become a promising materials for application in nanospintronic devices

PdO doping tunes band-gap energy levels as well as oxidative stress responses to a Co₃O₄ p-type semiconductor in cells and the lung.

Science.gov (United States)

Zhang, Haiyuan; Pokhrel, Suman; Ji, Zhaoxia; Meng, Huan; Wang, Xiang; Lin, Sijie; Chang, Chong Hyun; Li, Linjiang; Li, Ruibin; Sun, Bingbing; Wang, Meiying; Liao, Yu-Pei; Liu, Rong; Xia, Tian; Mädler, Lutz; Nel, André E

2014-04-30

We demonstrate through PdO doping that creation of heterojunctions on Co3O4 nanoparticles can quantitatively adjust band-gap and Fermi energy levels to study the impact of metal oxide nanoparticle semiconductor properties on cellular redox homeostasis and hazard potential. Flame spray pyrolysis (FSP) was used to synthesize a nanoparticle library in which the gradual increase in the PdO content (0-8.9%) allowed electron transfer from Co3O4 to PdO to align Fermi energy levels across the heterojunctions. This alignment was accompanied by free hole accumulation at the Co3O4 interface and production of hydroxyl radicals. Interestingly, there was no concomitant superoxide generation, which could reflect the hole dominance of a p-type semiconductor. Although the electron flux across the heterojunctions induced upward band bending, the E(c) levels of the doped particles showed energy overlap with the biological redox potential (BRP). This allows electron capture from the redox couples that maintain the BRP from -4.12 to -4.84 eV, causing disruption of cellular redox homeostasis and induction of oxidative stress. PdO/Co3O4 nanoparticles showed significant increases in cytotoxicity at 25, 50, 100, and 200 μg/mL, which was enhanced incrementally by PdO doping in BEAS-2B and RAW 264.7 cells. Oxidative stress presented as a tiered cellular response involving superoxide generation, glutathione depletion, cytokine production, and cytotoxicity in epithelial and macrophage cell lines. A progressive series of acute pro-inflammatory effects could also be seen in the lungs of animals exposed to incremental PdO-doped particles. All considered, generation of a combinatorial PdO/Co3O4 nanoparticle library with incremental heterojunction density allowed us to demonstrate the integrated role of E(v), E(c), and E(f) levels in the generation of oxidant injury and inflammation by the p-type semiconductor, Co3O4.

Electronic structure study of wide band gap magnetic semiconductor (La0.6Pr0.4)0.65Ca0.35MnO3 nanocrystals in paramagnetic and ferromagnetic phases

Science.gov (United States)

Dwivedi, G. D.; Joshi, Amish G.; Kumar, Shiv; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L.; Ghosh, A. K.; Chatterjee, Sandip

2016-04-01

X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La0.6Pr0.4)0.65Ca0.35MnO3 near Fermi-level. XMCD results indicate that Mn3+ and Mn4+ spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La0.6Pr0.4)0.65Ca0.35MnO3 system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below TC. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers

KAUST Repository

Pu, Jiang

2017-04-18

The light-emitting device is the primary device for current light sources. In principle, conventional light-emitting devices need heterostructures and/or intentional carrier doping to form a p-n junction. This junction formation is, however, very difficult to achieve for most emerging semiconductors, and the fabrication of light-emitting devices is invariably a significant challenge. This study proposes a versatile and simple approach to realize light-emitting devices. This proposed device requires only a semiconducting film with two electrodes that are covered with an electrolyte. This unique structure achieves light emission at a voltage slightly larger than the bandgap energy of materials. This study applies this concept to emerging direct bandgap semiconductors, such as transition metal dichalcogenide monolayers and zinc oxide single crystals. These devices generate obvious light emission and provide sufficient evidence of the formation of a dynamic p-i-n junction or tunneling junction, presenting a versatile technique to develop optoelectronic devices.

Coupled Acoustic-Mechanical Bandgaps

DEFF Research Database (Denmark)

Jensen, Jakob Søndergaard; Kook, Junghwan

2016-01-01

medium and the presence of acoustic resonances. It is demonstrated that corrugation of the plate structure can introduce bending wave bandgaps and bandgaps in the acoustic domain in overlapping and audible frequency ranges. This effect is preserved also when taking the physical coupling between the two...... domains into account. Additionally, the coupling is shown to introduce extra gaps in the band structure due to modal interaction and the appearance of a cut-on frequency for the fundamental acoustic mode....

Indium oxide—a transparent, wide-band gap semiconductor for (opto)electronic applications

International Nuclear Information System (INIS)

Bierwagen, Oliver

2015-01-01

The present review takes a semiconductor physics perspective to summarize the state-of-the art of In 2 O 3 in relation to applications. After discussing conventional and novel applications, the crystal structure, synthesis of single-crystalline material, band-structure and optical transparency are briefly introduced before focussing on the charge carrier transport properties. The issues of unintentional n-type conductivity and its likely causes, the surface electron accumulation, and the lack of p-type conductivity will be presented. Intentional doping will be demonstrated to control the electron concentration and resistivity over a wide range, but is also subject to compensation. The control of the surface accumulation in relation to Schottky and ohmic contacts will be demonstrated. In the context of scattering mechanisms, the electron mobility and its limits will be discussed. Finally, the Seebeck coefficient and its significance will be shown, and ferromagnetic doping of In 2 O 3 will be critically discussed. With this overview most if not all ingredients for the use of In 2 O 3 as semiconductor material in novel or improved conventional devices will be given. (invited review)

Structural and optical studies of local disorder sensitivity in natural organic-inorganic self-assembled semiconductors

Energy Technology Data Exchange (ETDEWEB)

Vijaya Prakash, G; Pradeesh, K [Nanophotonics Lab, Department of Physics, Indian Institute of Technology Delhi, New Delhi (India); Ratnani, R; Saraswat, K [Department of Pure and Applied Chemistry, MDS University, Ajmer (India); Light, M E [School of Chemistry, University of Southampton, Southampton (United Kingdom); Baumberg, J J, E-mail: prakash@physics.iitd.ac.i [Nanophotonic Centre, Cavendish Laboratory, University Cambridge, Cambridge CB3 OHE (United Kingdom)

2009-09-21

The structural and optical spectra of two related lead iodide (PbI) based self-assembled hybrid organic-inorganic semiconductors are compared. During the synthesis, depending on the bridging of organic moiety intercalated between the PbI two-dimensional planes, different crystal structures are produced. These entirely different networks show different structural and optical features, including excitonic bandgaps. In particular, the modified organic environment of the excitons is sensitive to the local disorder both in single crystal and thin film forms. Such information is vital for incorporating these semiconductors into photonic device architectures.

2D Crystal Semiconductors New Materials for GHz-THz Devices

Science.gov (United States)

2015-10-02

authorization procedures , e.g. RD/FRD, PROPIN, ITAR, etc. Include copyright information. 13. SUPPLEMENTARY NOTES. Enter information not included elsewhere...out of the plane in equilibrium. The energy bandgaps and the band lineups of a few 2-D crystals are shown in Fig. 2. The figure also indicates the...Phys. Lett., vol. 72, pp. 1899–1901, 1998. [34] R. Schlaf, O. Lang, C. Pettenkofer, and W. Jaegermann, ‘‘Band lineup of layered semiconductor

Studies of optical properties and applications of some mixed ternary semiconductors

International Nuclear Information System (INIS)

Ghosh, P.S.; Ghosh, D.K.; Samanta, L.K.

1989-01-01

Refractive indices of some mixed compound semiconductors below the bandgap are presented on the basis of some fundamental parameters and the effect of lattice mismatch on the refractive index step is also studied. The results help to design a variety of opto-electronic devices for the use in optical fiber communication and heterostructure lasers. The calculated values agree well with available experimental values thus justifying the approach. (author)

Amorphous Semiconductors: From Photocatalyst to Computer Memory

Science.gov (United States)

Sundararajan, Mayur

Amorphous semiconductors are useful in many applications like solar cells, thin film displays, sensors, electrophotography, etc. The dissertation contains four projects. In the first three projects, semiconductor glasses which are a subset of amorphous semiconductors were studied. The last project is about exploring the strengths and constraints of two analysis programs which calculate the particle size information from experimental Small Angle X-ray Scattering data. By definition, glasses have a random atomic arrangement with no order beyond the nearest neighbor, but strangely there exists an Intermediate Range Order (IRO). The origin of IRO is still not clearly understood, but various models have been proposed. The signature of IRO is the First Sharp Diffraction Peak(FSDP) observed in x-ray and neutron scattering data. The FSDP of TiO 2 SiO2 glass photocatalyst with different Ti:Si ratio from SAXS data was measured to test the theoretical models. The experimental results along with its computer simulation results strongly supported one of two leading models. It was also found that the effect of doping IRO on TiO2 SiO2 is severe in mesoporous form than the bulk form. Glass semiconductors in mesoporous form are very useful photocatalysts due to their large specific surface area. Solar energy conversion of photocatalysts greatly depends on their bandgap, but very few photocatalysts have the optical bandgap covering the whole visible region of solar spectrum leading to poor efficiency. A physical method was developed to manipulate the bandgap of mesoporous photocatalysts, by using the anisotropic thermal expansion and stressed glass network properties of mesoporous glasses. The anisotropic thermal expansion was established by S/WAXS characterization of mesoporous silica (MCM-41). The residual stress in the glass network of mesoporous glasses was already known for an earlier work. The new method was initially applied on mesoporous TiPO4, and the results were

Wide bandgap Mg-doped ZnAlO thin films for optoelectronic applications

International Nuclear Information System (INIS)

Gupta, R.K.; Ghosh, K.; Patel, R.; Kahol, P.K.

2009-01-01

Magnesium-doped ZnAlO thin films were grown on quartz substrate by ablating the sintered target with a KrF excimer laser. The effect of growth temperature from 30 deg. C to 700 deg. C on structural, optical, and electrical properties has been studied. These films are highly transparent in visible spectrum with average transmittance of 82%. The films grown at low temperature are amorphous while films grown at high temperature are crystalline in nature. These films are highly oriented along (0 0 2) direction. The electrical conductivity, carrier concentration, and electron mobility is found to increase with increase in temperature and then decreases with further increase in temperature. The bandgap is found to vary from 3.86 eV to 4.00 eV for various films

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

Science.gov (United States)

Tongay, Sefaattin; Suh, Joonki; Ataca, Can; Fan, Wen; Luce, Alexander; Kang, Jeong Seuk; Liu, Jonathan; Ko, Changhyun; Raghunathanan, Rajamani; Zhou, Jian; Ogletree, Frank; Li, Jingbo; Grossman, Jeffrey C.; Wu, Junqiao

2013-01-01

Point defects in semiconductors can trap free charge carriers and localize excitons. The interaction between these defects and charge carriers becomes stronger at reduced dimensionalities, and is expected to greatly influence physical properties of the hosting material. We investigated effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductors where the vacancies density is controlled by α-particle irradiation or thermal-annealing. We found a new, sub-bandgap emission peak as well as increase in overall photoluminescence intensity as a result of the vacancy generation. Interestingly, these effects are absent when measured in vacuum. We conclude that in opposite to conventional wisdom, optical quality at room temperature cannot be used as criteria to assess crystal quality of the 2D semiconductors. Our results not only shed light on defect and exciton physics of 2D semiconductors, but also offer a new route toward tailoring optical properties of 2D semiconductors by defect engineering. PMID:24029823

Efficient, Broadband and Wide-Angle Hot-Electron Transduction using Metal-Semiconductor Hyperbolic Metamaterials

KAUST Repository

Sakhdari, Maryam

2016-05-20

Hot-electron devices are emerging as promising candidates for the transduction of optical radiation into electrical current, as they enable photodetection and solar/infrared energy harvesting at sub-bandgap wavelengths. Nevertheless, poor photoconversion quantum yields and low bandwidth pose fundamental challenge to fascinating applications of hot-electron optoelectronics. Based on a novel hyperbolic metamaterial (HMM) structure, we theoretically propose a vertically-integrated hot-electron device that can efficiently couple plasmonic excitations into electron flows, with an external quantum efficiency approaching the physical limit. Further, this metamaterial-based device can have a broadband and omnidirectional response at infrared and visible wavelengths. We believe that these findings may shed some light on designing practical devices for energy-efficient photodetection and energy harvesting beyond the bandgap spectral limit.

A novel electro-thermal model for wide bandgap semiconductor based devices

DEFF Research Database (Denmark)

Sintamarean, Nicolae Christian; Blaabjerg, Frede; Wang, Huai

2013-01-01

This paper propose a novel Electro-Thermal Model for the new generation of power electronics WBG-devices (by considering the SiC MOSFET-CMF20120D from CREE), which is able to estimate the device junction and case temperature. The Device-Model estimates the voltage drop and the switching energies...... by considering the device current, the off-state blocking voltage and junction temperature variation. Moreover, the proposed Thermal-Model is able to consider the thermal coupling within the MOSFET and its freewheeling diode, integrated into the same package, and the influence of the ambient temperature...... variation. The importance of temperature loop feedback in the estimation accuracy of device junction and case temperature is studied. Furthermore, the Safe Operating Area (SOA) of the SiC MOSFET is determined for 2L-VSI applications which are using sinusoidal PWM. Thus, by considering the heatsink thermal...

Ultraviolet photoluminescence and Raman scattering of wide bandgap semiconductors and nanocrystallites

Science.gov (United States)

Chen, Xiang-Bai

In the sports psychology literature, goal setting intervention studies have been a popular area of research the last ten years (Burton, 2001). Previous research demonstrates that goal setting is the most consistent and effective performance enhancement strategy in the behavioral sciences and seems to have a positive impact on performance (Burton et al., 2003; Locke & Latham, 1990). A "roadmap" detailing how to implement a periodized goal-setting program was developed, and its effectiveness was assessed using a quasi-experimental, multiple baseline case study design. Participants were six female members of a collegiate tennis team in the Northwest who ranged in age between 18--22 years. Several instruments were used to assess the effectiveness of the goal setting intervention, including: the Sports Motivation Scale (SMS), Task and Ego Orientation Sports Questionnaire (TEOSQ), Theories of Talent Scale (TOTS), Athletic Coping Skills Inventory (ACSI-28), Trait Sport Confidence Inventory (TSCI), and the Multidimensional Perfectionism Scale (MPS). All of these instruments have been documented to possess solid psychometric properties. Goal term length was periodized into three duration increments, including: long-term (macro), short-term (micro), and intermediate-term (meso) goals. Intervention effectiveness was assessed using both quantitative and qualitative analysis to assess self-confidence and performance. A review of qualitative data provided the strongest support for the generally large positive impact of goal-setting on athletes' self-confidence and performance. Every athlete reported that goal-setting was extremely helpful for increasing their understanding of the game, becoming more motivated to practice and compete, enhancing their self-confidence, focus and concentration, and boosting their performance. Overall, these results point out the effectiveness of goal-setting as a strategy to increase self-confidence and enhance performance, but they suggest that effective goal-setting programs nurture the process by spending significant individual time teaching athletes to set and adjust goals. (Abstract shortened by UMI.)

Wide Bandgap Semiconductor Based Solid State Smart Circuit Protection, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Advanced solid state power component technology is necessary for future hybrid aircraft systems with increased power demands. There is a need for adequate circuit...

Efficient, Broadband and Wide-Angle Hot-Electron Transduction using Metal-Semiconductor Hyperbolic Metamaterials

KAUST Repository

Sakhdari, Maryam; Hajizadegan, Mehdi; Farhat, Mohamed; Chen, Pai-Yen

2016-01-01

Hot-electron devices are emerging as promising candidates for the transduction of optical radiation into electrical current, as they enable photodetection and solar/infrared energy harvesting at sub-bandgap wavelengths. Nevertheless, poor

Extracting hot carriers from photoexcited semiconductor nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Zhu, Xiaoyang

2014-12-10

This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

PdO Doping Tunes Band-Gap Energy Levels as Well as Oxidative Stress Responses to a Co3O4p-Type Semiconductor in Cells and the Lung

Science.gov (United States)

2014-01-01

We demonstrate through PdO doping that creation of heterojunctions on Co3O4 nanoparticles can quantitatively adjust band-gap and Fermi energy levels to study the impact of metal oxide nanoparticle semiconductor properties on cellular redox homeostasis and hazard potential. Flame spray pyrolysis (FSP) was used to synthesize a nanoparticle library in which the gradual increase in the PdO content (0–8.9%) allowed electron transfer from Co3O4 to PdO to align Fermi energy levels across the heterojunctions. This alignment was accompanied by free hole accumulation at the Co3O4 interface and production of hydroxyl radicals. Interestingly, there was no concomitant superoxide generation, which could reflect the hole dominance of a p-type semiconductor. Although the electron flux across the heterojunctions induced upward band bending, the Ec levels of the doped particles showed energy overlap with the biological redox potential (BRP). This allows electron capture from the redox couples that maintain the BRP from −4.12 to −4.84 eV, causing disruption of cellular redox homeostasis and induction of oxidative stress. PdO/Co3O4 nanoparticles showed significant increases in cytotoxicity at 25, 50, 100, and 200 μg/mL, which was enhanced incrementally by PdO doping in BEAS-2B and RAW 264.7 cells. Oxidative stress presented as a tiered cellular response involving superoxide generation, glutathione depletion, cytokine production, and cytotoxicity in epithelial and macrophage cell lines. A progressive series of acute pro-inflammatory effects could also be seen in the lungs of animals exposed to incremental PdO-doped particles. All considered, generation of a combinatorial PdO/Co3O4 nanoparticle library with incremental heterojunction density allowed us to demonstrate the integrated role of Ev, Ec, and Ef levels in the generation of oxidant injury and inflammation by the p-type semiconductor, Co3O4. PMID:24673286

Direct Bandgap Group IV Materials

Science.gov (United States)

2016-01-21

AFRL-AFOSR-JP-TR-2017-0049 Direct Bandgap group IV Materials Hung Hsiang Cheng NATIONAL TAIWAN UNIVERSITY Final Report 01/21/2016 DISTRIBUTION A...NAME(S) AND ADDRESS(ES) NATIONAL TAIWAN UNIVERSITY 1 ROOSEVELT RD. SEC. 4 TAIPEI CITY, 10617 TW 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING...14. ABSTRACT Direct bandgap group IV materials have been long sought for in both academia and industry for the implementation of photonic devices

Near infrared laser stimulation of human neural stem cells into neurons on graphene nanomesh semiconductors.

Science.gov (United States)

Akhavan, Omid; Ghaderi, Elham; Shirazian, Soheil A

2015-02-01

Reduced graphene oxide nanomeshes (rGONMs), as p-type semiconductors with band-gap energy of ∼ 1 eV, were developed and applied in near infrared (NIR) laser stimulation of human neural stem cells (hNSCs) into neurons. The biocompatibility of the rGONMs in growth of hNSCs was found similar to that of the graphene oxide (GO) sheets. Proliferation of the hNSCs on the GONMs was assigned to the excess oxygen functional groups formed on edge defects of the GONMs, resulting in superhydrophilicity of the surface. Under NIR laser stimulation, the graphene layers (especially the rGONMs) exhibited significant cell differentiations, including more elongations of the cells and higher differentiation of neurons than glia. The higher hNSC differentiation on the rGONM than the reduced GO (rGO) was assigned to the stimulation effects of the low-energy photoexcited electrons injected from the rGONM semiconductors into the cells, while the high-energy photoelectrons of the rGO (as a zero band-gap semiconductor) could suppress the cell proliferation and/or even cause cell damages. Using conventional heating of the culture media up to ∼ 43 °C (the temperature typically reached under the laser irradiation), no significant differentiation was observed in dark. This further confirmed the role of photoelectrons in the hNSC differentiation. Copyright © 2014 Elsevier B.V. All rights reserved.

Compound Semiconductor Radiation Detectors

CERN Document Server

Owens, Alan

2012-01-01

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

Wide Band Gap Semiconductors Symposium Held in Boston, Massachusetts on 2-6 December 1991. Materials Research Society Symposium Proceedings. Volume 242

Science.gov (United States)

1992-01-01

AND PROPERTIES OF WIDE BAND-GAP Il-VI STRAINED- LAYER SUPERLATTICE 227 Hailong Wang. Jie Cui. Aidong Shen. Liang Xu, Yunliang Chen. and Yuhua Shen IN...WANG JIE CUI AIDONG SHEN LIANG XU YUNLIANG CHEN AND YUHUA SHEN Shanghai Institute of Optics and Fine Mechanics, Academia Sinica P.O.Box 800-216 Shanghai...He Zujou, Cao Huazhe, Su Wuda, Chen Zhongcai, Zhon Feng and Wang Erguang, Thin Solid Films, 139,261(1986). 22) Xin Li and T.L.Tansley, J.AppI.Phys

Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

International Nuclear Information System (INIS)

Kim, Won Mok; Kim, Jin Soo; Jeong, Jeung-hyun; Park, Jong-Keuk; Baik, Young-Jun; Seong, Tae-Yeon

2013-01-01

Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16 –10 21 cm −3 , were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated. - Highlights: ► Optical band-gaps of polycrystalline ZnO thin films were analyzed. ► Experimental carrier concentration range covered from 10 16 to 10 21 cm −3 . ► Nonparabolic conduction band parameters were used in theoretical analysis. ► The band-filling and the band-gap renormalization effects were considered. ► The measured optical band-gap shifts corresponded well with the calculated ones

Defining Moments: Selected Highlights from 25 Years of Missile Defense Technology Development and Transfer. A Technology Applications Report

National Research Council Canada - National Science Library

2006-01-01

.... Electronics that use materials called wide-bandgap semiconductors were pioneered for advanced radar systems and are now essential to modern communications equipment from satellites to cell phones...

True photonic band-gap mode-control in VCSEL structures

DEFF Research Database (Denmark)

Romstad, F.; Madsen, M.; Birkedal, Dan

2003-01-01

Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect.......Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect....

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires

Science.gov (United States)

Yan, Jie-Yun

2018-06-01

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

Mixing of III-V compound semiconductor superlattices

International Nuclear Information System (INIS)

Mei, Ping.

1989-01-01

In this work, the methods as well as mechanisms of III-V compound superlattice mixing are discussed, with particular attention on the AlGaAs based superlattice system. Comparative studies of ion-induced mixing showed two distinct effects resulting from ion implantation followed by a thermal anneal; i.e. collisional mixing and impurity induced mixing. It was found that Ga and As ion induced mixing are mainly due to the collisional effect, where the extent of the mixing can be estimated theoretically, with the parameters of ion mass, incident energy and the implant dose. The impurity effect was dominant for Si, Ge, Be, Zn and Te. Quantitative studies of impurity induced mixing have been conducted on samples doped with Si or Te during the growth process. It was discovered that Si induced AlGaAs superlattice mixing yielded an activation energy of approximately 4 eV for the Al diffusion coefficient with a high power law dependence of the prefactor on the Si concentration. In the Te doped AlGaAs superlattice the Al diffusion coefficient exhibited an activation energy of ∼3.0 eV, with a prefactor approximately proportional to the Te concentration. These results are of importance in examining the current diffusion models. Zn and Si induced InP/InGaAs superlattice mixing are examined. It was found that Zn predominantly induces cation interdiffusion, while Si induces comparable cation and anion interdiffusion. In addition, widely dispersed Zn rich islands form with Zn residing in the InP layers in the form of Zn 3 P 2 . With unstrained starting material, the layer bandgap disparity increases due to mixing induced strain, while in the Si diffused sample the mixed region would be expected to exhibit bandgaps intermediate between those of the original layers. Semiconductor superlattice mixing shows technological potential for optoelectronic device fabrication

Systematic Bandgap Engineering of Graphene Quantum Dots and Applications for Photocatalytic Water Splitting and CO2 Reduction.

Science.gov (United States)

Yan, Yibo; Chen, Jie; Li, Nan; Tian, Jingqi; Li, Kaixin; Jiang, Jizhou; Liu, Jiyang; Tian, Qinghua; Chen, Peng

2018-04-24

Graphene quantum dots (GQDs), which is the latest addition to the nanocarbon material family, promise a wide spectrum of applications. Herein, we demonstrate two different functionalization strategies to systematically tailor the bandgap structures of GQDs whereby making them snugly suitable for particular applications. Furthermore, the functionalized GQDs with a narrow bandgap and intramolecular Z-scheme structure are employed as the efficient photocatalysts for water splitting and carbon dioxide reduction under visible light. The underlying mechanisms of our observations are studied and discussed.

Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

Science.gov (United States)

Zhang, Liping; Jaroniec, Mietek

2018-02-01

Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

Robust Control of Wide Bandgap Power Electronics Device Enabled Smart Grid

Science.gov (United States)

Yao, Tong

In recent years, wide bandgap (WBG) devices enable power converters with higher power density and higher efficiency. On the other hand, smart grid technologies are getting mature due to new battery technology and computer technology. In the near future, the two technologies will form the next generation of smart grid enabled by WBG devices. This dissertation deals with two applications: silicon carbide (SiC) device used for medium voltage level interface (7.2 kV to 240 V) and gallium nitride (GaN) device used for low voltage level interface (240 V/120 V). A 20 kW solid state transformer (SST) is designed with 6 kHz switching frequency SiC rectifier. Then three robust control design methods are proposed for each of its smart grid operation modes. In grid connected mode, a new LCL filter design method is proposed considering grid voltage THD, grid current THD and current regulation loop robust stability with respect to the grid impedance change. In grid islanded mode, micro synthesis method combined with variable structure control is used to design a robust controller for grid voltage regulation. For grid emergency mode, multivariable controller designed using Hinfinity synthesis method is proposed for accurate power sharing. Controller-hardware-in-the-loop (CHIL) testbed considering 7-SST system is setup with Real Time Digital Simulator (RTDS). The real TMS320F28335 DSP and Spartan 6 FPGA control board is used to interface a switching model SST in RTDS. And the proposed control methods are tested. For low voltage level application, a 3.3 kW smart grid hardware is built with 3 GaN inverters. The inverters are designed with the GaN device characterized using the proposed multi-function double pulse tester. The inverter is controlled by onboard TMS320F28379D dual core DSP with 200 kHz sampling frequency. Each inverter is tested to process 2.2 kW power with overall efficiency of 96.5 % at room temperature. The smart grid monitor system and fault interrupt devices (FID

Optical characterization and bandgap engineering of flat and wrinkle-textured FA0.83Cs0.17Pb(I1-xBrx)3 perovskite thin films

Science.gov (United States)

Tejada, A.; Braunger, S.; Korte, L.; Albrecht, S.; Rech, B.; Guerra, J. A.

2018-05-01

The complex refractive indices of formamidinium cesium lead mixed-halide [FA0.83Cs0.17Pb(I1- xBrx)3] perovskite thin films of compositions ranging from x = 0 to 0.4, with both flat and wrinkle-textured surface topographies, are reported. The films are characterized using a combination of variable angle spectroscopic ellipsometry and spectral transmittance in the wavelength range of 190 nm to 850 nm. Optical constants, film thicknesses and roughness layers are obtained point-by-point by minimizing a global error function, without using optical dispersion models, and including topographical information supplied by a laser confocal microscope. To evaluate the bandgap engineering potential of the material, the optical bandgaps and Urbach energies are then accurately determined by applying a band fluctuation model for direct semiconductors, which considers both the Urbach tail and the fundamental band-to-band absorption region in a single equation. With this information, the composition yielding the optimum bandgap of 1.75 eV for a Si-perovskite tandem solar cell is determined.

Band-gap tunable dielectric elastomer filter for low frequency noise

Science.gov (United States)

Jia, Kun; Wang, Mian; Lu, Tongqing; Zhang, Jinhua; Wang, Tiejun

2016-05-01

In the last decades, diverse materials and technologies for sound insulation have been widely applied in engineering. However, suppressing the noise radiation at low frequency still remains a challenge. In this work, a novel membrane-type smart filter, consisting of a pre-stretched dielectric elastomer membrane with two compliant electrodes coated on the both sides, is presented to control the low frequency noise. Since the stiffness of membrane dominates its acoustic properties, sound transmission band-gap of the membrane filter can be tuned by adjusting the voltage applied to the membrane. The impedance tube experiments have been carried out to measure the sound transmission loss (STL) of the filters with different electrodes, membrane thickness and pre-stretch conditions. The experimental results show that the center frequency of sound transmission band-gap mainly depends on the stress in the dielectric elastomer, and a large band-gap shift (more than 60 Hz) can be achieved by tuning the voltage applied to the 85 mm diameter VHB4910 specimen with pre-stretch {λ }0=3. Based on the experimental results and the assumption that applied electric field is independent of the membrane behavior, 3D finite element analysis has also been conducted to calculate the membrane stress variation. The sound filter proposed herein may provide a promising facility to control low frequency noise source with tonal characteristics.

A High-Efficiency Compact SiC-based Power Converter System, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Wide-bandgap SiC semiconductors have been recently investigated for use in power devices, because of their potential capabilities of operating at high power...

Semiconductor Physical Electronics

CERN Document Server

Li, Sheng

2006-01-01

Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

Issues in first-principles calculations for defects in semiconductors and oxides

International Nuclear Information System (INIS)

Nieminen, Risto M

2009-01-01

Recent advances in density-functional theory (DFT) calculations of defect electronic properties in semiconductors and insulators are discussed. In particular, two issues are addressed: the band-gap underestimation of standard density-functional methods with its harmful consequences for the positioning of defect-related levels in the band-gap region, and the slow convergence of calculated defect properties when the periodic supercell approach is used. Systematic remedies for both of these deficiencies are now available, and are being implemented in the context of popular DFT codes. This should help in improving the parameter-free accuracy and thus the predictive power of the methods to enable unambiguous explanation of defect-related experimental observations. These include not only the various fingerprint spectroscopies for defects but also their thermochemistry and dynamics, i.e. the temperature-dependent concentration and diffusivities of defects under various doping conditions and in different stoichiometries

Fabrication and characterization of porous-core honeycomb bandgap THz fibers

DEFF Research Database (Denmark)

Bao, Hualong; Nielsen, Kristian; Rasmussen, Henrik K.

We have fabricated a porous-core honeycomb fiber in the cyclic olefin copolymer (COC) Topas® by drill-draw technology [1]. A cross-sectional image of the fabricated fiber is shown in the left Panel of Fig. 1. Simulation of the electromagnetic properties of the fiber shows two wide bandgaps within......-TDS system (Picometrix T-Ray 4000). The reference pulse before coupling into the fiber is shown in Fig. 1(a) and the time trace of the THz pulse after propagation through a 5-cm long segment of fiber is shown in Fig. 1(b) (blue curve). After adding some water on the outside of the fiber surface......, the transmitted pulse experiences less pronounced oscillations at times later than 20 ps ( red curve in Fig. 1(b)). Figs. 1(c) and (d) show the short-time Fourier transforms of the two time-domain traces in Fig. 1(b), overlaid with the calculated group delay in the two bandgaps (black squares). The frequencies...

Silicon carbide: A unique platform for metal-oxide-semiconductor physics

Energy Technology Data Exchange (ETDEWEB)

Liu, Gang [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); Tuttle, Blair R. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

2015-06-15

A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO{sub 2}/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

Science.gov (United States)

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

Penta-SiC5 monolayer: A novel quasi-planar indirect semiconductor with a tunable wide band gap

Science.gov (United States)

Naseri, Mosayeb

2018-03-01

In this paper, by using of the first principles calculations in the framework of the density functional theory, we systematically investigated the structure, stability, electronic and optical properties of a novel two-dimensional pentagonal monolayer semiconductors namely penta-SiC5 monolayer. Comparing elemental silicon, diamond, and previously reported 2D carbon allotropes, our calculation shows that the predicted penta-SiC5 monolayer has a metastable nature. The calculated results indicate that the predicted monolayer is an indirect semiconductor with a wide band gap of about 2.82 eV by using Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional level of theory which can be effectively tuned by external biaxial strains. The obtained exceptional electronic properties suggest penta-SiC5 monolayer as promising candidates for application in new electronic devices in nano scale.

Microwave Frequency Comb from a Semiconductor in a Scanning Tunneling Microscope.

Science.gov (United States)

Hagmann, Mark J; Yarotski, Dmitry A; Mousa, Marwan S

2017-04-01

Quasi-periodic excitation of the tunneling junction in a scanning tunneling microscope, by a mode-locked ultrafast laser, superimposes a regular sequence of 15 fs pulses on the DC tunneling current. In the frequency domain, this is a frequency comb with harmonics at integer multiples of the laser pulse repetition frequency. With a gold sample the 200th harmonic at 14.85 GHz has a signal-to-noise ratio of 25 dB, and the power at each harmonic varies inversely with the square of the frequency. Now we report the first measurements with a semiconductor where the laser photon energy must be less than the bandgap energy of the semiconductor; the microwave frequency comb must be measured within 200 μm of the tunneling junction; and the microwave power is 25 dB below that with a metal sample and falls off more rapidly at the higher harmonics. Our results suggest that the measured attenuation of the microwave harmonics is sensitive to the semiconductor spreading resistance within 1 nm of the tunneling junction. This approach may enable sub-nanometer carrier profiling of semiconductors without requiring the diamond nanoprobes in scanning spreading resistance microscopy.

Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors.

Science.gov (United States)

Ihlefeld, Jon F; Tian, Wei; Liu, Zi-Kui; Doolittle, W Alan; Bernhagen, Margitta; Reiche, Peter; Uecker, Reinhard; Ramesh, Ramamoorthy; Schlom, Darrell G

2009-08-01

BiFeO3 thin films have been deposited on (001) SrTiO3, (101) DyScO3, (011) DyScO3, (0001) AlGaN/GaN, and (0001) 6H-SiC single crystal substrates by reactive molecular beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry in accordance with thermodynamic calculations. Four-circle x-ray diffraction and transmission electron microscopy reveal phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002 degrees). Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized using intervening epitaxial (111) SrTiO3 / (100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have 2 in-plane orientations: [1120] BiFeO3 || [1120] GaN (SiC) plus a twin variant related by a 180 degrees in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with high bandgap semiconductors is an important step toward novel field-effect devices.

Thermal Modeling of GaN HEMTs on Sapphire and Diamond

National Research Council Canada - National Science Library

Salm, III, Roman P

2005-01-01

Wide bandgap semiconductors have entered into Naval radar use and will eventually replace vacuum tube and conventional solid-state amplifiers for all modern military radar and communications applications. Gallium Nitride (GaN...

300C/15 kW power converter with AlGaN/GaN-Si MOS-HFETs for electric propulsion systems, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Capitalizing on a strong expertise in III-Nitride epitaxy, GaN-Si power device designs, and wide-bandgap power electronics, researchers at GeneSiC Semiconductor...

High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters

Science.gov (United States)

Wanlass, Mark W [Golden, CO

2011-11-29

A monolithic, multi-bandgap, tandem solar photovoltaic converter has at least one, and preferably at least two, subcells grown lattice-matched on a substrate with a bandgap in medium to high energy portions of the solar spectrum and at least one subcell grown lattice-mismatched to the substrate with a bandgap in the low energy portion of the solar spectrum, for example, about 1 eV.

Band Gap Distortion in Semiconductors Strongly Driven by Intense Mid-Infrared Laser Fields

Science.gov (United States)

Kono, J.; Chin, A. H.

2000-03-01

Crystalline solids non-resonantly driven by intense time-periodic electric fields are predicted to exhibit unusual band-gap distortion.(e.g., Y. Yacoby, Phys. Rev. 169, 610 (1968); L.C.M. Miranda, Solid State Commun. 45, 783 (1983); J.Z. Kaminski, Acta Physica Polonica A 83, 495(1993).) Such non-perturbative effects have not been observed to date because of the unavoidable sample damage due to the very high intensity required using conventional lasers ( 1 eV photon energy). Here, we report the first clear evidence of laser-induced bandgap shrinkage in semiconductors under intense mid-infrared (MIR) laser fields. The use of long-wavelength light reduces the required intensity and prohibits strong interband absorption, thereby avoiding the damage problem. The significant sub-bandgap absorption persists only during the existence of the MIR laser pulse, indicating the virtual nature of the effect. We show that this particular example of non-perturbative behavior, known as the dynamical Franz-Keldysh effect, occurs when the effective ponderomotive potential energy is comparable to the photon energy of the applied field. This work was supported by ONR, NSF, JST and NEDO.

Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga2O3, and Diamond.

Science.gov (United States)

Wellmann, Peter J

2017-11-17

Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies.

193nm high power lasers for the wide bandgap material processing

Science.gov (United States)

Fujimoto, Junichi; Kobayashi, Masakazu; Kakizaki, Koji; Oizumi, Hiroaki; Mimura, Toshio; Matsunaga, Takashi; Mizoguchi, Hakaru

2017-02-01

Recently infrared laser has faced resolution limit of finer micromachining requirement on especially semiconductor packaging like Fan-Out Wafer Level Package (FO-WLP) and Through Glass Via hole (TGV) which are hard to process with less defect. In this study, we investigated ablation rate with deep ultra violet excimer laser to explore its possibilities of micromachining on organic and glass interposers. These results were observed with a laser microscopy and Scanning Electron Microscope (SEM). As the ablation rates of both materials were quite affordable value, excimer laser is expected to be put in practical use for mass production.

Surface topography and chemistry shape cellular behavior on wide band-gap semiconductors.

Science.gov (United States)

Bain, Lauren E; Collazo, Ramon; Hsu, Shu-Han; Latham, Nicole Pfiester; Manfra, Michael J; Ivanisevic, Albena

2014-06-01

The chemical stability and electrical properties of gallium nitride make it a promising material for the development of biocompatible electronics, a range of devices including biosensors as well as interfaces for probing and controlling cellular growth and signaling. To improve the interface formed between the probe material and the cell or biosystem, surface topography and chemistry can be applied to modify the ways in which the device interacts with its environment. PC12 cells are cultured on as-grown planar, unidirectionally polished, etched nanoporous and nanowire GaN surfaces with and without a physisorbed peptide sequence that promotes cell adhesion. While cells demonstrate preferential adhesion to roughened surfaces over as-grown flat surfaces, the topography of that roughness also influences the morphology of cellular adhesion and differentiation in neurotypic cells. Addition of the peptide sequence generally contributes further to cellular adhesion and promotes development of stereotypic long, thin neurite outgrowths over alternate morphologies. The dependence of cell behavior on both the topographic morphology and surface chemistry is thus demonstrated, providing further evidence for the importance of surface modification for modulating bio-inorganic interfaces. Copyright © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Transparent contacts for stacked compound photovoltaic cells

Science.gov (United States)

Tauke-Pedretti, Anna; Cederberg, Jeffrey; Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis

2016-11-29

A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell including a first semiconductor material employed to form the first junction, the first semiconductor material having a first bandgap. The MEM-PV cell also includes a second photovoltaic cell comprising a second junction. The second photovoltaic cell comprises a second semiconductor material employed to form the second junction, the second semiconductor material having a second bandgap that is less than the first bandgap, the second photovoltaic cell further comprising a first contact layer disposed between the first junction of the first photovoltaic cell and the second junction of the second photovoltaic cell, the first contact layer composed of a third semiconductor material having a third bandgap, the third bandgap being greater than or equal to the first bandgap.

Terahertz spectroscopy of three-dimensional photonic band-gap crystals

International Nuclear Information System (INIS)

Oezbay, E.; Michel, E.; Tuttle, G.; Biswas, R.; Ho, K.M.; Bostak, J.; Bloom, D.M.

1994-01-01

We have fabricated and built three-dimensional photonic band-gap crystals with band-gap frequencies larger than 500 GHz. We built the crystals by stacking micromachined (110) silicon wafers. The transmission and dispersion characteristics of the structures were measured by an all-electronic terahertz spectroscopy setup. The experimental results were in good agreement with theoretical calculations. To our knowledge, our new crystal has the highest reported photonic band-gap frequency

Tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge

Energy Technology Data Exchange (ETDEWEB)

Inaoka, Takeshi, E-mail: inaoka@phys.u-ryukyu.ac.jp; Furukawa, Takuro; Toma, Ryo; Yanagisawa, Susumu [Department of Physics and Earth Sciences, Faculty of Science, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 (Japan)

2015-09-14

By means of a hybrid density-functional method, we investigate the tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge. We consider [001], [111], and [110] uniaxial tensility and (001), (111), and (110) biaxial tensility. Under the condition of no normal stress, we determine both normal compression and internal strain, namely, relative displacement of two atoms in the primitive unit cell, by minimizing the total energy. We identify those strain types which can induce the band-gap transition, and evaluate the critical strain coefficient where the gap transition occurs. Either normal compression or internal strain operates unfavorably to induce the gap transition, which raises the critical strain coefficient or even blocks the transition. We also examine how each type of tensile strain decreases the band-gap energy, depending on its orientation. Our analysis clearly shows that synergistic operation of strain orientation and band anisotropy has a great influence on the gap transition and the gap energy.

Spectroscopic Chemical Analysis Methods and Apparatus

Science.gov (United States)

Hug, William F. (Inventor); Reid, Ray D. (Inventor); Bhartia, Rohit (Inventor); Lane, Arthur L. (Inventor)

2018-01-01

Spectroscopic chemical analysis methods and apparatus are disclosed which employ deep ultraviolet (e.g. in the 200 nm to 300 nm spectral range) electron beam pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor light emitting devices, and hollow cathode metal ion lasers to perform non-contact, non-invasive detection of unknown chemical analytes. These deep ultraviolet sources enable dramatic size, weight and power consumption reductions of chemical analysis instruments. In some embodiments, Raman spectroscopic detection methods and apparatus use ultra-narrow-band angle tuning filters, acousto-optic tuning filters, and temperature tuned filters to enable ultra-miniature analyzers for chemical identification. In some embodiments Raman analysis is conducted along with photoluminescence spectroscopy (i.e. fluorescence and/or phosphorescence spectroscopy) to provide high levels of sensitivity and specificity in the same instrument.

Electron states in semiconductor quantum dots

International Nuclear Information System (INIS)

Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.

2014-01-01

In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications

Enhanced photocatalytic activity induced by sp 3 to sp 2 transition of carbon dopants in BiOCl crystals

KAUST Repository

Sun, Jianguo; Wu, Sujuan; Yang, Shi-Ze; Li, Qi; Xiong, Jiawei; Yang, Zhenzhong; Gu, Lin; Zhang, Xixiang; Sun, Lidong

2017-01-01

The insufficient light absorption and low quantum efficiency limit the photocatalytic performance of wide bandgap semiconductors. Here, we report a facile strategy to engineer the surface disordered defects of BiOCl nanosheets via carbon doping

Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN

National Research Council Canada - National Science Library

Steckl, Andrew

2006-01-01

Rare earth (RE) dopants (such as Er, Eu, Tm) in the wide bandgap semiconductor (WBGS) GaN are investigated for the fabrication of robust visible and infrared light emitting devices at a variety of wavelengths...

Electromagnetic interference reduction using electromagnetic bandgap structures in packages, enclosures, cavities, and antennas

Science.gov (United States)

Mohajer Iravani, Baharak

dielectric constant. Meander lines can increase the effective inductive load which pushes down the lower edge of bandgap, thus resulting in a wider bandgap. Simulation results are included to show that the proposed EBG structures provide very wide bandgap (˜10GHz) covering the multiple harmonics of of currently available microprocessors and its harmonics. To speed up the design procedure, a model based on combination of lumped elements and transmission lines is proposed. The derived model predicts accurately the starting edge of bandgap. This result is verified with full-wave analysis. Finally, another novel compact wide band mushroom-type EBG structure using magneto-dielectric materials is designed. Numerical simulations show that the proposed EBG structure provides in-phase reflection bandgap which is several times greater than the one obtained from a conventional EBG operating at the same frequency while its cell size is smaller. This type of EBG structure can be used efficiently as a ground plane for low-profile wideband antennas.

Electrically tunable liquid crystal photonic bandgap fiber laser

DEFF Research Database (Denmark)

Olausson, Christina Bjarnal Thulin; Scolari, Lara; Wei, Lei

2010-01-01

We demonstrate electrical tunability of a fiber laser by using a liquid crystal photonic bandgap fiber. Tuning of the laser is achieved by combining the wavelength filtering effect of a liquid crystal photonic bandgap fiber device with an ytterbium-doped photonic crystal fiber. We fabricate an al...

Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995

International Nuclear Information System (INIS)

Knoll, G.F.

1995-07-01

Devices fabricated from wide bandgap materials that can be operated without cooling suffer from poor energy resolution and are limited to very small volumes; this arises largely from poor hole mobility in compound semiconductors. Three different device configurations are being investigated for possibly overcoming this limitation: buried grid-single carrier devices, trenched single carrier devices, and devices using patterned coplanar electrodes (CdZnTe). In the first, leakage problems were encountered. For the second, a set of specifications has been completed, and electron cyclotron resonance etching will be done at an off-campus facility. For the third, Aurora will supply 3 different CdZnTe detectors. An analytical study was done of the patterned electrode approach

Phosphorene nanoribbons: Passivation effect on bandgap and effective mass

International Nuclear Information System (INIS)

Xu, Li-Chun; Song, Xian-Jiang; Yang, Zhi; Cao, Ling; Liu, Rui-Ping; Li, Xiu-Yan

2015-01-01

Highlights: • Hydrogenation and fluorination can passivate the metallic edge states of zPNRs. • The bandgap of each type of zPNRs decreases as the ribbon's width increases duo to the quantum confinement effect. • Two local configurations of passivated atoms can coexist in nanoribbons and affect the bandgap of narrow nanoribbons. • New passivation configuration can effectively reduce the effective mass of electrons. - Abstract: The edge passivation effect of phosphorene nanoribbons is systematically investigated using density functional theory. Hydrogen and fluorine atoms passivate the metallic edge states of nanoribbons and can open a bandgap up to 2.25 eV. The two configurations of passivated atoms can exist at two edges and affect the bandgap of narrow nanoribbons. The bandgap of each type of zPNRs decreases as the ribbon's width increases, which can be attributed to the quantum confinement effect. The new configuration, named C b , can effectively reduce the effective mass of electrons, which benefits the future design of phosphorene-based electronic devices

Phosphorene nanoribbons: Passivation effect on bandgap and effective mass

Energy Technology Data Exchange (ETDEWEB)

Xu, Li-Chun, E-mail: xulichun@tyut.edu.cn; Song, Xian-Jiang; Yang, Zhi; Cao, Ling; Liu, Rui-Ping; Li, Xiu-Yan

2015-01-01

Highlights: • Hydrogenation and fluorination can passivate the metallic edge states of zPNRs. • The bandgap of each type of zPNRs decreases as the ribbon's width increases duo to the quantum confinement effect. • Two local configurations of passivated atoms can coexist in nanoribbons and affect the bandgap of narrow nanoribbons. • New passivation configuration can effectively reduce the effective mass of electrons. - Abstract: The edge passivation effect of phosphorene nanoribbons is systematically investigated using density functional theory. Hydrogen and fluorine atoms passivate the metallic edge states of nanoribbons and can open a bandgap up to 2.25 eV. The two configurations of passivated atoms can exist at two edges and affect the bandgap of narrow nanoribbons. The bandgap of each type of zPNRs decreases as the ribbon's width increases, which can be attributed to the quantum confinement effect. The new configuration, named C{sub b}, can effectively reduce the effective mass of electrons, which benefits the future design of phosphorene-based electronic devices.

Semiconductor nanostructures for artificial photosynthesis

Science.gov (United States)

Yang, Peidong

2012-02-01

Nanowires, with their unique capability to bridge the nanoscopic and macroscopic worlds, have already been demonstrated as important materials for different energy conversion. One emerging and exciting direction is their application for solar to fuel conversion. The generation of fuels by the direct conversion of solar energy in a fully integrated system is an attractive goal, but no such system has been demonstrated that shows the required efficiency, is sufficiently durable, or can be manufactured at reasonable cost. One of the most critical issues in solar water splitting is the development of a suitable photoanode with high efficiency and long-term durability in an aqueous environment. Semiconductor nanowires represent an important class of nanostructure building block for direct solar-to-fuel application because of their high surface area, tunable bandgap and efficient charge transport and collection. Nanowires can be readily designed and synthesized to deterministically incorporate heterojunctions with improved light absorption, charge separation and vectorial transport. Meanwhile, it is also possible to selectively decorate different oxidation or reduction catalysts onto specific segments of the nanowires to mimic the compartmentalized reactions in natural photosynthesis. In this talk, I will highlight several recent examples in this lab using semiconductor nanowires and their heterostructures for the purpose of direct solar water splitting.

Oxide semiconductors

CERN Document Server

Svensson, Bengt G; Jagadish, Chennupati

2013-01-01

Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

Advances in photonic bandgap fiber functionality

DEFF Research Database (Denmark)

Lyngsøe, Jens Kristian

In order to take advantage of the many intriguing optical properties of photonic bandgap fibers, there are some technological challenges that have to be addressed. Among other things this includes transmission loss and the fibers ability to maintain field polarization. The work presented in this ......In order to take advantage of the many intriguing optical properties of photonic bandgap fibers, there are some technological challenges that have to be addressed. Among other things this includes transmission loss and the fibers ability to maintain field polarization. The work presented...

Probing dopants in wide semiconductor quantum point contacts

International Nuclear Information System (INIS)

Yakimenko, I I; Berggren, K-F

2016-01-01

Effects of randomly distributed impurities on conductance, spin polarization and electron localization in realistic gated semiconductor quantum point contacts (QPCs) have been simulated numerically. To this end density functional theory in the local spin-density approximation has been used. In the case when the donor layer is embedded far from the two-dimensional electron gas (2DEG) the electrostatic confinement potential exhibits the conventional parabolic form, and thus the usual ballistic transport phenomena take place both in the devices with split gates alone and with an additional metallic gate on the top. In the opposite case, i.e. when the randomly distributed donors are placed not far away from the 2DEG layer, there are drastic changes like the localization of electrons in the vicinity of confinement potential minima which give rise to fluctuations in conductance and resonances. The conductance as a function of the voltage applied to the top gate for asymmetrically charged split gates has been calculated. In this case resonances in conductance caused by randomly distributed donors are shifted and decrease in amplitude while the anomalies caused by interaction effects remain unmodified. It has been also shown that for a wide QPC the polarization can appear in the form of stripes. The importance of partial ionization of the random donors and the possibility of short range order among the ionized donors are emphasized. The motivation for this work is to critically evaluate the nature of impurities and how to guide the design of high-mobility devices. (paper)

Microscopic analysis of saturable absorbers: Semiconductor saturable absorber mirrors versus graphene

Energy Technology Data Exchange (ETDEWEB)

Hader, J.; Moloney, J. V. [Nonlinear Control Strategies, Inc., 3542 N. Geronimo Ave., Tucson, Arizona 85705 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States); Yang, H.-J.; Scheller, M. [College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States); Koch, S. W. [Department of Physics and Materials Sciences Center, Philipps Universität Marburg, Renthof 5, 35032 Marburg (Germany)

2016-02-07

Fully microscopic many-body calculations are used to study the influence of strong sub-picosecond pulses on the carrier distributions and corresponding optical response in saturable absorbers used for mode-locking—semiconductor (quantum well) saturable absorber mirrors (SESAMs) and single layer graphene based saturable absorber mirrors (GSAMs). Unlike in GSAMs, the saturation fluence and recovery time in SESAMs show a strong spectral dependence. While the saturation fluence in the SESAM is minimal at the excitonic bandgap, the optimal recovery time and least pulse distortion due to group delay dispersion are found for excitation higher in the first subband. For excitation near the SESAM bandgap, the saturation fluence is about one tenth of that in the GSAM. At energies above the bandgap, the fluences in both systems become similar. A strong dependence of the saturation fluence on the pulse width in both systems is caused by carrier relaxation during the pulse. The recovery time in graphene is found to be about two to four times faster than that in the SESAMs. The occurrence of negative differential transmission in graphene is shown to be caused by dopant related carriers. In SESAMs, a negative differential transmission is found when exciting below the excitonic resonance where excitation induced dephasing leads to an enhancement of the absorption. Comparisons of the simulation data to the experiment show a very good quantitative agreement.

Relation between the electroforming voltage in alkali halide-polymer diodes and the bandgap of the alkali halide

International Nuclear Information System (INIS)

Bory, Benjamin F.; Wang, Jingxin; Janssen, René A. J.; Meskers, Stefan C. J.; Gomes, Henrique L.; De Leeuw, Dago M.

2014-01-01

Electroforming of indium-tin-oxide/alkali halide/poly(spirofluorene)/Ba/Al diodes has been investigated by bias dependent reflectivity measurements. The threshold voltages for electrocoloration and electroforming are independent of layer thickness and correlate with the bandgap of the alkali halide. We argue that the origin is voltage induced defect formation. Frenkel defect pairs are formed by electron–hole recombination in the alkali halide. This self-accelerating process mitigates injection barriers. The dynamic junction formation is compared to that of a light emitting electrochemical cell. A critical defect density for electroforming is 10 25 /m 3 . The electroformed alkali halide layer can be considered as a highly doped semiconductor with metallic transport characteristics

Photodiodes based on fullerene semiconductor

International Nuclear Information System (INIS)

Voz, C.; Puigdollers, J.; Cheylan, S.; Fonrodona, M.; Stella, M.; Andreu, J.; Alcubilla, R.

2007-01-01

Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal deflection spectroscopy. The optical absorption spectrum reveals a direct bandgap of 2.3 eV and absorption bands at 2.8 and 3.6 eV, which are related to the creation of charge-transfer excitons. Various photodiodes on indium-tin-oxide coated glass substrates were also fabricated, using different metallic contacts in order to compare their respective electrical characteristics. The influence of a poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) buffer layer between the indium-tin-oxide electrode and the fullerene semiconductor is also demonstrated. These results are discussed in terms of the workfunction for each electrode. Finally, the behaviour of the external quantum efficiency is analyzed for the whole wavelength spectrum

Optimum design of band-gap beam structures

DEFF Research Database (Denmark)

Olhoff, Niels; Niu, Bin; Cheng, Gengdong

2012-01-01

The design of band-gap structures receives increasing attention for many applications in mitigation of undesirable vibration and noise emission levels. A band-gap structure usually consists of a periodic distribution of elastic materials or segments, where the propagation of waves is impeded...... or significantly suppressed for a range of external excitation frequencies. Maximization of the band-gap is therefore an obvious objective for optimum design. This problem is sometimes formulated by optimizing a parameterized design model which assumes multiple periodicity in the design. However, it is shown...... in the present paper that such an a priori assumption is not necessary since, in general, just the maximization of the gap between two consecutive natural frequencies leads to significant design periodicity. The aim of this paper is to maximize frequency gaps by shape optimization of transversely vibrating...

DD-Amp for Deep Space Communications, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — AlGaN/GaN MMICs on SiC substrates will be utilized to achieve Power Added Efficiencies (PAE) in excess of 60%. These wide band-gap solid-state semiconductors will be...

Micro and nanophotonics for semiconductor infrared detectors towards an ultimate uncooled device

CERN Document Server

Jakšic, Zoran

2014-01-01

The advent of microelectromechanic system (MEMS) technologies and nanotechnologies has resulted in a multitude of structures and devices with ultra compact dimensions and with vastly enhanced or even completely novel properties. In the field of photonics it resulted in the appearance of new paradigms, including photonic crystals that exhibit photonic bandgap and represent an optical analog of semiconductors and metamaterials that have subwavelength features and may have almost arbitrary values of effective refractive index, including those below zero. In addition to that, a whole new field of

Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process.

Science.gov (United States)

Mehta, Karan K; Orcutt, Jason S; Shainline, Jeffrey M; Tehar-Zahav, Ofer; Sternberg, Zvi; Meade, Roy; Popović, Miloš A; Ram, Rajeev J

2014-02-15

We present measurements on resonant photodetectors utilizing sub-bandgap absorption in polycrystalline silicon ring resonators, in which light is localized in the intrinsic region of a p+/p/i/n/n+ diode. The devices, operating both at λ=1280 and λ=1550  nm and fabricated in a complementary metal-oxide-semiconductor (CMOS) dynamic random-access memory emulation process, exhibit detection quantum efficiencies around 20% and few-gigahertz response bandwidths. We observe this performance at low reverse biases in the range of a few volts and in devices with dark currents below 50 pA at 10 V. These results demonstrate that such photodetector behavior, previously reported by Preston et al. [Opt. Lett. 36, 52 (2011)], is achievable in bulk CMOS processes, with significant improvements with respect to the previous work in quantum efficiency, dark current, linearity, bandwidth, and operating bias due to additional midlevel doping implants and different material deposition. The present work thus offers a robust realization of a fully CMOS-fabricated all-silicon photodetector functional across a wide wavelength range.

Cat-CVD-prepared oxygen-rich μc-Si:H for wide-bandgap material

International Nuclear Information System (INIS)

Matsumoto, Yasuhiro; Ortega, Mauricio; Peza, Juan-Manuel; Reyes, Mario-Alfredo; Escobosa, Arturo

2005-01-01

Microcrystalline phase-involved oxygen-rich a-Si:H (hydrogenated amorphous silicon) films have been obtained using catalytic chemical vapor deposition (Cat-CVD) process. Pure SiH 4 (silane), H 2 (hydrogen), and O 2 (oxygen) gases were introduced in the chamber by maintaining a pressure of 0.1 Torr. A tungsten catalyzer was fixed at temperatures of 1750 and 1950 deg. C for film deposition on glass and crystalline silicon substrates at 200 deg. C. As revealed from X-ray diffraction spectra, the microcrystalline phase appears for oxygen-rich a-Si:H samples deposited at a catalyzer temperature of 1950 deg. C. However, this microcrystalline phase tends to disappear for further oxygen incorporation. The oxygen content in the deposited films was corroborated by FTIR analysis revealing Si-O-Si bonds and typical Si-H bonding structures. The optical bandgap of the sample increases from 2.0 to 2.7 eV with oxygen gas flow and oxygen incorporation to the deposited films. In the present thin film deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations

Micromachined millimeter-wave photonic band-gap crystals

International Nuclear Information System (INIS)

Oezbay, E.; Michel, E.; Tuttle, G.; Biswas, R.; Sigalas, M.; Ho, K.

1994-01-01

We have developed a new technique for fabricating three-dimensional photonic band-gap crystals. Our method utilizes an orderly stacking of micromachined (110) silicon wafers to build the periodic structure. A structure with a full three-dimensional photonic band gap centered near 100 GHz was measured, with experimental results in good agreement with theoretical predictions. This basic approach described should be extendable to build structures with photonic band-gap frequencies ranging from 30 GHz to 3 THz

Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond

Science.gov (United States)

2017-01-01

Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies. PMID:29200530

Research and development of photovoltaic power system. Optimization of bandgap of chalcopyrite semiconductors; Taiyoko hatsuden system no kenkyu kaihatsu. Kinseitaihaba no saitekika no kenkyu

Energy Technology Data Exchange (ETDEWEB)

Konagai, M [Tokyo Institute of Technology, Tokyo (Japan). Faculty of Engineering

1994-12-01

This paper reports the result obtained during fiscal 1994 on research on research on optimization of bandgap in thin film compound solar cells. In research on Cu(InGa)Se2 thin film solar cells by using a gas phase selenide making process, discussions were given on optimizing the following three processes: a process to raise temperature of a precursor film formed at a substrate temperature of about 150{degree}C, a selenide making process to perform annealing at about 500{degree}C, and a temperature reducing process. Good characteristics were obtained when selenium amount in the precursor is about 50%. In a bandgap control viewpoint, it was found that the conversion efficiency decreases rapidly when Ga composition is higher than 50%. A conversion efficiency of 14.9% was obtained to date at the Ga/(In+Ga) ratio of 0.4. In research on Cu(InGa)Se2 thin film solar cells by using a simultaneous deposition method, a conversion efficiency of 13.5% was obtained at a bandgap width of about 1.3 eV during research on manufacturing ZnO/CdS/Cu(InGa)Se2 thin film solar cells by using the simultaneous deposition method. Research has been carried out on manufacturing Cu(InGa)Se2 thin film solar cells using ZnSe interface layers. 8 figs.

The study of response of wide band gap semiconductor detectors using the Geant4

Directory of Open Access Journals (Sweden)

Hussain Riaz

2014-01-01

Full Text Available The energy dependence on the intrinsic efficiency, absolute efficiency, full energy peak absolute efficiency and peak-to-total ratio have been studied for various wide band gap semiconductor detectors using the Geant4 based Monte Carlo simulations. The detector thickness of 1-4 mm and the area in 16-100 mm2 range were considered in this work. In excellent agreement with earlier work (Rybka et al., [20], the Geant4 simulated values of detector efficiencies have been found to decrease with incident g-ray energy. Both for the detector thickness and the detector area, the increasing trends have been observed for total efficiency as well as for full-energy peak efficiency in 0.1 MeV-50 MeV range. For Cd1-xZnxTe, the detector response remained insensitive to changes in relative proportions of Zn. For various wide band gap detectors studied in this work, the detection efficiency of TlBr was found highest over the entire range of energy, followed by the HgI2, CdTe, and then by CZT.

Identification and tunable optical coherent control of transition-metal spins in silicon carbide

NARCIS (Netherlands)

Bosma, Tom; Lof, Gerrit J. J.; Gilardoni, Carmem M.; Zwier, Olger V.; Hendriks, Freddie; Ellison, Alexandre; Magnusson, Björn; Gällström, Andreas; Ivanov, Ivan G.; Son, N. T.; Havenith, Remco W. A.; Wal, Caspar H. van der

2018-01-01

Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Several suitable centers have been identified, most famously the nitrogen-vacancy defect in diamond. However, integration

Growth of Cu(In,Al)(Se,S)2 thin films by selenization and sulfurization for a wide bandgap absorber

International Nuclear Information System (INIS)

Fujiwara, C.; Kawasaki, Y.; Sato, T.; Sugiyama, M.; Chichibu, S.F.

2010-01-01

Full text : Chalcopyrite structure Cu(In 1 .xAlx)(S y Se 1 -y) 2 (CIASS) alloys are attracting attention as promising candidates for the light-absorbing medium of high conversion efficiency, low cost, and lightweight solar cells. In addition, according to the wide variation in the bandgap energy (1.0-3.5eV), multiple-junction or tandem solar cells able to be fabricated using CIASS films of different compositions, x and y. In fact, several research groups have recently fabricated Cu(In,Al)Se 2 -based solar cells, and a high μ of 16.9 percent has been demonstrated. The sulfurization following selenization of Cu(In,Ga)Se2 (CIGS) films is believed to be promising for bandgap engineering of absorber material. Furthermore, it has been reported that the controlled incorporation of sulfur into CIGS films reduces the carrier recombination in the space charge region due to the deep trap states. Therefore, the sulfurization following selenization is expected to be used as a method of growth of CIASS films. However, sulfurization condition following selenization for obtaining CIASS films has not been clarified. The crystal growth of CIASS must be studied for solar cell applications. In this study, the advantages of using sulfurization for the growth of CIASS will be presented. Cu-In-Al precursors were selenized using diethylselenide (DESe) at 515-570 degrees Celsium for 60- 90 min under atmospheric pressure. The flow rates of DESe and N 2 carrier gases were 35 imol/min and 2 L/min, respectively. The films were then sulfurized at 550 degrees Celsium using S vapor. These films were characterized by SEM, EDX, XRD, and PL measurements. Using the selenization and sulfurization technique, polycrystalline Cu(In,Al)Se 2 , CuIn(Se,S) 2 , CuInS 2 films with thickness of approximately 2.0 im were formed without additional annealing. The films adhered well to the Mo/SLG substrate, which was confirmed by the peeling test. Phase separations, i.e. distinct peaks corresponding to CuInSe 2

Thermal tunability of photonic bandgaps in liquid crystal infiltrated microstructured polymer optical fibers

DEFF Research Database (Denmark)

Yuan, Scott Wu; Wei, Lei; Alkeskjold, Thomas Tanggaard

2009-01-01

We demonstrate the photonic bandgap effect and the thermal tunability of bandgaps in microstructured polymer optical fibers infiltrated with liquid crystal. Two liquid crystals with opposite sign of the temperature gradient of the ordinary refractive index (E7 and MDA-00- 1444) are used to demons......We demonstrate the photonic bandgap effect and the thermal tunability of bandgaps in microstructured polymer optical fibers infiltrated with liquid crystal. Two liquid crystals with opposite sign of the temperature gradient of the ordinary refractive index (E7 and MDA-00- 1444) are used...... to demonstrate that both signs of the thermal tunability of the bandgaps are possible. The useful bandgaps are ultimately bounded to the visible range by the transparency window of the polymer....

Introduction to fifth international workshop on mercuric iodide nuclear radiation detectors

International Nuclear Information System (INIS)

Schieber, M.

1982-01-01

Mercuric iodide is a wide bandgap semiconductor, with Eg approx. = 2.14 eV at room temperature. Therefore, HgI 2 is totally different from the well-studied, narrower gap, elemental semiconductors such as Si and Ge, and also different in its physical and chemical properties from the known semiconductor binary zinc-blend compounds such as GaAs or InP. The purpose of studies in the last decade was to further our understanding of HgI 2 ; recent progress is reported

Metallurgy and purification of semiconductor materials

International Nuclear Information System (INIS)

Mughal, G.R.; Ali, M.M.; Ali, I.

1996-01-01

In this article the metallurgical aspects of semiconductor science and technology have been stressed here rather than of the physical and electronic aspect of the subject. Semiconductor technology has not merely presented the metallurgist with new challenges. The ease with which the semiconductor planes cleave make possible, the preparation and study of virgin surface. Semiconductor materials were being widely employed in the study of sub-boundaries and structures and can largely contribute to the study of certain aspects of nucleation and growth, precipitation phenomena, mechanical behaviour, in metallurgy. (A.B.)

Single-layer group IV-V and group V-IV-III-VI semiconductors: Structural stability, electronic structures, optical properties, and photocatalysis

Science.gov (United States)

Lin, Jia-He; Zhang, Hong; Cheng, Xin-Lu; Miyamoto, Yoshiyuki

2017-07-01

Recently, single-layer group III monochalcogenides have attracted both theoretical and experimental interest at their potential applications in photonic devices, electronic devices, and solar energy conversion. Excited by this, we theoretically design two kinds of highly stable single-layer group IV-V (IV =Si ,Ge , and Sn; V =N and P) and group V-IV-III-VI (IV =Si ,Ge , and Sn; V =N and P; III =Al ,Ga , and In; VI =O and S) compounds with the same structures with single-layer group III monochalcogenides via first-principles simulations. By using accurate hybrid functional and quasiparticle methods, we show the single-layer group IV-V and group V-IV-III-VI are indirect bandgap semiconductors with their bandgaps and band edge positions conforming to the criteria of photocatalysts for water splitting. By applying a biaxial strain on single-layer group IV-V, single-layer group IV nitrides show a potential on mechanical sensors due to their bandgaps showing an almost linear response for strain. Furthermore, our calculations show that both single-layer group IV-V and group V-IV-III-VI have absorption from the visible light region to far-ultraviolet region, especially for single-layer SiN-AlO and SnN-InO, which have strong absorption in the visible light region, resulting in excellent potential for solar energy conversion and visible light photocatalytic water splitting. Our research provides valuable insight for finding more potential functional two-dimensional semiconductors applied in optoelectronics, solar energy conversion, and photocatalytic water splitting.

CNTs-Modified Nb3O7F Hybrid Nanocrystal towards Faster Carrier Migration, Lower Bandgap and Higher Photocatalytic Activity.

Science.gov (United States)

Huang, Fei; Li, Zhen; Yan, Aihua; Zhao, Hui; Liang, Huagen; Gao, Qingyu; Qiang, Yinghuai

2017-01-06

Novel semiconductor photocatalysts have been the research focus and received much attention in recent years. The key issues for novel semiconductor photocatalysts are to effectively harvest solar energy and enhance the separation efficiency of the electron-hole pairs. In this work, novel Nb 3 O 7 F/CNTs hybrid nanocomposites with enhanced photocatalytic activity have been successfully synthesized by a facile hydrothermal plus etching technique. The important finding is that appropriate pH values lead to the formation of Nb 3 O 7 F nanocrystal directly. A general strategy to introdue interaction between Nb 3 O 7 F and CNTs markedly enhances the photocatalytic activity of Nb 3 O 7 F. Comparatively, Nb 3 O 7 F/CNTs nanocomposites exhibit higher photodegradation efficiency and faster photodegradation rate in the solution of methylene blue (MB) under visible-light irradiation. The higher photocatalytic activity may be attributed to more exposed active sites, higher carrier migration and narrower bandgap because of good synergistic effect. The results here may inspire more engineering, new design and facile fabrication of novel photocatalysts with highly photocatalytic activity.

Research on bandgaps in two-dimensional phononic crystal with two resonators.

Science.gov (United States)

Gao, Nansha; Wu, Jiu Hui; Yu, Lie

2015-02-01

In this paper, the bandgap properties of a two-dimensional phononic crystal with the two resonators is studied and embedded in a homogenous matrix. The resonators are not connected with the matrix but linked with connectors directly. The dispersion relationship, transmission spectra, and displacement fields of the eigenmodes of this phononic crystal are studied with finite-element method. In contrast to the phononic crystals with one resonators and hollow structure, the proposed structures with two resonators can open bandgaps at lower frequencies. This is a very interesting and useful phenomenon. Results show that, the opening of the bandgaps is because of the local resonance and the scattering interaction between two resonators and matrix. An equivalent spring-pendulum model can be developed in order to evaluate the frequencies of the bandgap edge. The study in this paper is beneficial to the design of opening and tuning bandgaps in phononic crystals and isolators in low-frequency range. Copyright © 2014 Elsevier B.V. All rights reserved.

The effect of Se/Te ratio on transient absorption behavior and nonlinear absorption properties of CuIn0.7Ga0.3(Se1-xTex)2 (0 ≤ x ≤ 1) amorphous semiconductor thin films

Science.gov (United States)

Karatay, Ahmet; Küçüköz, Betül; Çankaya, Güven; Ates, Aytunc; Elmali, Ayhan

2017-11-01

The characterization of the CuInSe2 (CIS), CuInGaSe (CIGS) and CuGaSe2 (CGS) based semiconductor thin films are very important role for solar cell and various nonlinear optical applications. In this paper, the amorphous CuIn0.7Ga0.3(Se1-xTex)2 semiconductor thin films (0 ≤ x ≤ 1) were prepared with 60 nm thicknesses by using vacuum evaporation technique. The nonlinear absorption properties and ultrafast transient characteristics were investigated by using open aperture Z-scan and ultrafast pump-probe techniques. The energy bandgap values were calculated by using linear absorption spectra. The bandgap values are found to be varying from 0.67 eV to 1.25 eV for CuIn0.7Ga0.3Te2, CuIn0.7Ga0.3Se1.6Te0.4, CuIn0.7Ga0.3Se0.4Te1.6 and CuIn0.7Ga0.3Se2 thin films. The energy bandgap values decrease with increasing telluride (Te) doping ratio in mixed CuIn0.7Ga0.3(Se1-xTex)2 films. This affects nonlinear characteristics and ultrafast dynamics of amorphous thin films. Ultrafast pump-probe experiments indicated that decreasing of bandgap values with increasing the Te amount switches from the excited state absorption signals to ultrafast bleaching signals. Open aperture Z-scan experiments show that nonlinear absorption properties enhance with decreasing bandgaps values for 65 ps pulse duration at 1064 nm. Highest nonlinear absorption coefficient was found for CuIn0.7Ga0.3Te2 thin film due to having the smallest energy bandgap.

Room-temperature ferromagnetic properties of Cu-doped ZnO rod ...

Indian Academy of Sciences (India)

logical applications in optoelectronics, magnetoelectronics, and microwave devices (Kin et al 2004; Bouloudenine et al. 2005). Recently, theoretical investigations have suggested that wide bandgap semiconductors are the most promising candidates for achieving high Curie temperatures (Dietl et al. 2000), which have ...

Use of silane coupling agent for surface modification of zinc oxide as ...

Indian Academy of Sciences (India)

VI group of semiconductor having wurtzite structure and a direct wide bandgap of 3·37 ... et al 2007) and antibacterial activity (Zhang et al 2007; Jin et al 2009). ..... functionalized ZnO showed a fine dispersion in polymeric matrix. TGA results ...

New Light-Harvesting Materials Using Accurate and Efficient Bandgap Calculations

DEFF Research Database (Denmark)

Castelli, Ivano Eligio; Hüser, Falco; Pandey, Mohnish

2014-01-01

Electronic bandgap calculations are presented for 2400 experimentally known materials from the Materials Project database and the bandgaps, obtained with different types of functionals within density functional theory and (partial) self-consistent GW approximation, are compared for 20 randomly...

Novel semiconductor solar cell structures: The quantum dot intermediate band solar cell

International Nuclear Information System (INIS)

Marti, A.; Lopez, N.; Antolin, E.; Canovas, E.; Stanley, C.; Farmer, C.; Cuadra, L.; Luque, A.

2006-01-01

The Quantum Dot Intermediate Band Solar Cell (QD-IBSC) has been proposed for studying experimentally the operating principles of a generic class of photovoltaic devices, the intermediate band solar cells (IBSC). The performance of an IBSC is based on the properties of a semiconductor-like material which is characterised by the existence of an intermediate band (IB) located within what would otherwise be its conventional bandgap. The improvement in efficiency of the cell arises from its potential (i) to absorb below bandgap energy photons and thus produce additional photocurrent, and (ii) to inject this enhanced photocurrent without degrading its output photo-voltage. The implementation of the IBSC using quantum dots (QDs) takes advantage of the discrete nature of the carrier density of states in a 0-dimensional nano-structure, an essential property for realising the IB concept. In the QD-IBSC, the IB arises from the confined electron states in an array of quantum dots. This paper reviews the operation of the first prototype QD-IBSCs and discusses some of the lessons learnt from their characterisation

Novel semiconductor solar cell structures: The quantum dot intermediate band solar cell

Energy Technology Data Exchange (ETDEWEB)

Marti, A. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain)]. E-mail: amarti@etsit.upm.es; Lopez, N. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain); Antolin, E. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain); Canovas, E. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain); Stanley, C. [Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Farmer, C. [Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Cuadra, L. [Departamento de Teoria de la Senal y Comunicaciones- Escuela Politecnica Superior, Universidad de Alcala, Ctra. Madrid-Barcelona, km. 33600, 28805-Alcala de Henares (Madrid) (Spain); Luque, A. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain)

2006-07-26

The Quantum Dot Intermediate Band Solar Cell (QD-IBSC) has been proposed for studying experimentally the operating principles of a generic class of photovoltaic devices, the intermediate band solar cells (IBSC). The performance of an IBSC is based on the properties of a semiconductor-like material which is characterised by the existence of an intermediate band (IB) located within what would otherwise be its conventional bandgap. The improvement in efficiency of the cell arises from its potential (i) to absorb below bandgap energy photons and thus produce additional photocurrent, and (ii) to inject this enhanced photocurrent without degrading its output photo-voltage. The implementation of the IBSC using quantum dots (QDs) takes advantage of the discrete nature of the carrier density of states in a 0-dimensional nano-structure, an essential property for realising the IB concept. In the QD-IBSC, the IB arises from the confined electron states in an array of quantum dots. This paper reviews the operation of the first prototype QD-IBSCs and discusses some of the lessons learnt from their characterisation.

Analysis of phononic bandgap structures with dissipation

DEFF Research Database (Denmark)

Andreassen, Erik; Jensen, Jakob Søndergaard

2013-01-01

and longer wavelengths, we show that the two formulations produce nearly identical results in terms of propagation constant and wave decay. We use the k(ω)-formulation to compute loss factors with dissipative bandgap materials for steady-state wave propagation and create simplified diagrams that unify...... the spatial loss factor from dissipative and bandgap effects. Additionally, we demonstrate the applicability of the k(ω)-formulation for the computation of the band diagram for viscoelastic composites and compare the computed loss factors for low frequency wave propagation to existing results based on quasi...

Polar semiconductor heterojunction structure energy band diagram considerations

International Nuclear Information System (INIS)

Lin, Shuxun; Wen, Cheng P.; Wang, Maojun; Hao, Yilong

2016-01-01

The unique nature of built-in electric field induced positive/negative charge pairs of polar semiconductor heterojunction structure has led to a more realistic device model for hexagonal III-nitride HEMT. In this modeling approach, the distribution of charge carriers is dictated by the electrostatic potential profile instead of Femi statistics. The proposed device model is found suitable to explain peculiar properties of GaN HEMT structures, including: (1) Discrepancy in measured conventional linear transmission line model (LTLM) sheet resistance and contactless sheet resistance of GaN HEMT with thin barrier layer. (2) Below bandgap radiation from forward biased Nickel Schottky barrier diode on GaN HEMT structure. (3) GaN HEMT barrier layer doping has negligible effect on transistor channel sheet charge density.

Polar semiconductor heterojunction structure energy band diagram considerations

Energy Technology Data Exchange (ETDEWEB)

Lin, Shuxun; Wen, Cheng P., E-mail: cpwen@ieee.org; Wang, Maojun; Hao, Yilong [Institute of Microelectronics, Peking University, Beijing (China)

2016-03-28

The unique nature of built-in electric field induced positive/negative charge pairs of polar semiconductor heterojunction structure has led to a more realistic device model for hexagonal III-nitride HEMT. In this modeling approach, the distribution of charge carriers is dictated by the electrostatic potential profile instead of Femi statistics. The proposed device model is found suitable to explain peculiar properties of GaN HEMT structures, including: (1) Discrepancy in measured conventional linear transmission line model (LTLM) sheet resistance and contactless sheet resistance of GaN HEMT with thin barrier layer. (2) Below bandgap radiation from forward biased Nickel Schottky barrier diode on GaN HEMT structure. (3) GaN HEMT barrier layer doping has negligible effect on transistor channel sheet charge density.

Dynamics of Interfacial Charge Transfer States and Carriers Separation in Dye-Sensitized Solar Cells: A Time-Resolved Terahertz Spectroscopy Study

OpenAIRE

Brauer, Jan C.; Marchioro, Arianna; Paraecattil, Arun A.; Oskouei, Ahmad A.; Moser, Jacques-E.

2015-01-01

Electron injection from a photoexcited molecular sensitizer into a wide-bandgap semiconductor is the primary step toward charge separation in dye-sensitized solar cells (DSSCs). According to the current understanding of DSSCs functioning mechanism, charges are separated directly during this primary electron transfer process, yielding hot conduction band electrons in the semiconductor and positive holes localized on oxidized dye molecules at the surface. Comparing results of ultrafast transien...

Stability and band offsets between c-plane ZnO semiconductor and LaAlO3 gate dielectric

Science.gov (United States)

Wang, Jianli; Chen, Xinfeng; Wu, Shuyin; Tang, Gang; Zhang, Junting; Stampfl, C.

2018-03-01

Wurtzite-perovskite heterostructures composed of a high dielectric constant oxide and a wide bandgap semiconductor envision promising applications in field-effect transistors. In the present paper, the structural and electronic properties of LaAlO3/ZnO heterojunctions are investigated by first-principles calculations. We study the initial adsorption of La, Al, and oxygen atoms on ZnO (0001) and (000 1 ¯ ) surfaces and find that La atoms may occupy interstitial sites during the growth of stoichiometric ZnO (0001). The band gap of the stoichiometric ZnO (0001) surface is smaller than that of the stoichiometric ZnO (000 1 ¯ ) surface. The surface formation energy indicates that La or Al atoms may substitute Zn atoms at the nonstoichiometric ZnO (0001) surface. The atomic charges, electronic density of states, and band offsets are analyzed for the optimized LaAlO3/ZnO heterojunctions. There is a band gap for the LaAlO3/ZnO (000 1 ¯ ) heterostructures, and the largest variation in charge occurs at the surface or interface. Our results suggest that the Al-terminated LaAlO3/ZnO (000 1 ¯ ) interfaces are suitable for the design of metal oxide semiconductor devices because the valence and conduction band offsets are both larger than 1 eV and the interface does not produce any in-gap states.

Electronic structure study of wide band gap magnetic semiconductor (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} nanocrystals in paramagnetic and ferromagnetic phases

Energy Technology Data Exchange (ETDEWEB)

Dwivedi, G. D.; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L. [Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China); Joshi, Amish G. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Kumar, Shiv; Ghosh, A. K. [Department of Physics, Banaras Hindu University, Varanasi 221005 (India); Chatterjee, Sandip, E-mail: schatterji.app@iitbhu.ac.in [Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

2016-04-25

X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} near Fermi-level. XMCD results indicate that Mn{sup 3+} and Mn{sup 4+} spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below T{sub C}. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

Organic semiconductors in a spin

CERN Document Server

Samuel, I

2002-01-01

A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

Halogenation of SiC for band-gap engineering and excitonic functionalization

Science.gov (United States)

Drissi, L. B.; Ramadan, F. Z.; Lounis, S.

2017-11-01

The optical excitation spectra and excitonic resonances are investigated in systematically functionalized SiC with Fluorine and/or Chlorine utilizing density functional theory in combination with many-body perturbation theory. The latter is required for a realistic description of the energy band-gaps as well as for the theoretical realization of excitons. Structural, electronic and optical properties are scrutinized and show the high stability of the predicted two-dimensional materials. Their realization in laboratory is thus possible. Large band-gaps of the order of 4 eV are found in the so-called GW approximation, with the occurrence of bright excitons, optically active in the four investigated materials. Their binding energies vary from 0.9 eV to 1.75 eV depending on the decoration choice and in one case, a dark exciton is foreseen to exist in the fully chlorinated SiC. The wide variety of opto-electronic properties suggest halogenated SiC as interesting materials with potential not only for solar cell applications, anti-reflection coatings or high-reflective systems but also for a possible realization of excitonic Bose-Einstein condensation.

Transmission properties of hollow-core photonic bandgap fibers

DEFF Research Database (Denmark)

Falk, Charlotte Ijeoma; Hald, Jan; Petersen, Jan C.

2010-01-01

Variations in optical transmission of four types of hollow-core photonic bandgap fibers are measured as a function of laser frequency. These variations influence the potential accuracy of gas sensors based on molecular spectroscopy in hollow-core fibers.......Variations in optical transmission of four types of hollow-core photonic bandgap fibers are measured as a function of laser frequency. These variations influence the potential accuracy of gas sensors based on molecular spectroscopy in hollow-core fibers....

CONJUGATED POLYMERS AND POLYELECTROLYTES IN SOLAR PHOTOCONVERSION, Final Technical Report

Energy Technology Data Exchange (ETDEWEB)

Schanze, Kirk S [University of Florida

2014-08-05

This DOE-supported program investigated the fundamental properties of conjugated polyelectrolytes, with emphasis placed on studies of excited state energy transport, self-assembly into conjugated polyelectroyte (CPE) based films and colloids, and exciton transport and charge injection in CPE films constructed atop wide bandgap semiconductors. In the most recent grant period we have also extended efforts to examine the properties of low-bandgap donor-acceptor conjugated polyelectrolytes that feature strong visible light absorption and the ability to adsorb to metal-oxide interfaces.

Porous and Nanoporous Semiconductors and Emerging Applications

Directory of Open Access Journals (Sweden)

Helmut Föll

2006-01-01

Full Text Available Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nanometer” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with, for example, optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, for example, high explosives or electrodes for micro-fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching, properties of porous semiconductors, and emerging applications.

Emission and Absorption Entropy Generation in Semiconductors

DEFF Research Database (Denmark)

Reck, Kasper; Varpula, Aapo; Prunnila, Mika

2013-01-01

While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor...... materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical...

Optically controlled photonic bandgap structures for microstrip circuits

International Nuclear Information System (INIS)

Cadman, Darren Arthur

2003-01-01

This thesis is concerned with the optical control of microwave photonic bandgap circuits using high resistivity silicon. Photoconducting processes that occur within silicon are investigated. The influence of excess carrier density on carrier mobility and lifetime is examined. In addition, electron-hole pair recombination mechanisms (Shockley-Read-Hall, Auger, radiative and surface) are investigated. The microwave properties of silicon are examined, in particular the variation of silicon reflectivity with excess carrier density. Filtering properties of microstrip photonic bandgap structures and how they may be controlled optically are studied. A proof-of-concept microstrip photonic bandgap structure with optical control is designed, simulated and measured. With no optical illumination incident upon the silicon, the microstrip photonic bandgap structure's filtering properties are well-defined; a 3dB stopband width of 2.6GHz, a 6dB bandwidth of 2GHz and stopband depth of -11.6dB at the centre frequency of 9.9GHz. When the silicon is illuminated, the structure's filtering properties are suppressed. Under illumination the experimental results display an increase in S 21 of 6.5dB and a reduction in S 11 of more than 10dB at 9.9GHz. A comparison of measured and simulated results reveal that the photogenerated excess carrier density is between 4 x 10 15 cm -3 and 1.1 x 10 16 cm -3 . (author)

Bandgap engineering and charge separation in two-dimensional GaS-based van der Waals heterostructures for photocatalytic water splitting

Science.gov (United States)

Wang, Biao; Kuang, Anlong; Luo, Xukai; Wang, Guangzhao; Yuan, Hongkuan; Chen, Hong

2018-05-01

Two-dimensional (2D) gallium sulfide (GaS), hexagonal boron nitride (h-BN) and graphitic carbon nitride (g-C3N4) have been fabricated and expected to be promising photocatalysts under ultraviolet irradiation. Here, we employ hybrid density functional calculations to explore the potential of the 2D GaS-based heterojunctions GaS/h-BN (g-C3N4) for the design of efficient water redox photocatalysts. Both heterostructures can be formed via van der Waals (vdW) interaction and are direct bandgap semiconductors, whose bandgaps are reduced comparing with isolated GaS, h-BN or g-C3N4 monolayers and whose bandedges straddle water redox potentials. Furthermore, the optical absorption of GaS/h-BN (g-C3N4) heterostructures is observably enhanced in the ultraviolet-visible (UV-vis) light range. The electron-hole pairs in GaS/h-BN (g-C3N4) heterostructures are completely separated from different layers. In addition, the in-plane biaxial strain can effectively modulate the electronic properties of GaS/h-BN (g-C3N4) heterostructures. Thus the GaS/h-BN (g-C3N4) heterostructures are anticipated to be promising candidates for photocatalytic water splitting to produce hydrogen.

Shape optimization of solid-air porous phononic crystal slabs with widest full 3D bandgap for in-plane acoustic waves

Science.gov (United States)

D'Alessandro, Luca; Bahr, Bichoy; Daniel, Luca; Weinstein, Dana; Ardito, Raffaele

2017-09-01

The use of Phononic Crystals (PnCs) as smart materials in structures and microstructures is growing due to their tunable dynamical properties and to the wide range of possible applications. PnCs are periodic structures that exhibit elastic wave scattering for a certain band of frequencies (called bandgap), depending on the geometric and material properties of the fundamental unit cell of the crystal. PnCs slabs can be represented by plane-extruded structures composed of a single material with periodic perforations. Such a configuration is very interesting, especially in Micro Electro-Mechanical Systems industry, due to the easy fabrication procedure. A lot of topologies can be found in the literature for PnCs with square-symmetric unit cell that exhibit complete 2D bandgaps; however, due to the application demand, it is desirable to find the best topologies in order to guarantee full bandgaps referred to in-plane wave propagation in the complete 3D structure. In this work, by means of a novel and fast implementation of the Bidirectional Evolutionary Structural Optimization technique, shape optimization is conducted on the hole shape obtaining several topologies, also with non-square-symmetric unit cell, endowed with complete 3D full bandgaps for in-plane waves. Model order reduction technique is adopted to reduce the computational time in the wave dispersion analysis. The 3D features of the PnC unit cell endowed with the widest full bandgap are then completely analyzed, paying attention to engineering design issues.

Liquid Crystal photonic Bandgap Fiber Devices

DEFF Research Database (Denmark)

Wei, Lei

In this Ph.D. thesis, an experimental investigation of liquid crystal photonic bandgap (LCPBG) fiber devices and applications is presented. Photonic crystal fibers (PCFs) consist of a cladding microstructure with periodic index variations and a core defined by a defect of the structure. The prese......In this Ph.D. thesis, an experimental investigation of liquid crystal photonic bandgap (LCPBG) fiber devices and applications is presented. Photonic crystal fibers (PCFs) consist of a cladding microstructure with periodic index variations and a core defined by a defect of the structure...... of each LCPBG fiber. Finally, the applications for LCPBG fiber devices based on the on-chip platform design have been demonstrated in realizing microwave true-time delay and creating an electrically tunable fiber laser. Referatet mailes...

High pressure study of the zinc phosphide semiconductor compound in two different phases

International Nuclear Information System (INIS)

Mokhtari, Ali

2009-01-01

Electronic and structural properties of the zinc phosphide semiconductor compound are calculated at hydrostatic pressure using the full-potential all-electron linearized augmented plane wave plus local orbital (FP-LAPW+lo) method in both cubic and tetragonal phases. The exchange-correlation potential is treated by the generalized gradient approximation within the scheme of Perdew, Burke and Ernzerhof, GGA96 (1996 Phys. Rev. Lett. 77 3865). Also, the Engel and Vosko GGA formalism, EV-GGA (Engel and Vosko 1993 Phys. Rev. B 47 13164), is used to improve the band-gap results. Internal parameters are optimized by relaxing the atomic positions in the force directions using the Hellman-Feynman approach. The lattice constants, internal parameters, bulk modulus, cohesive energy and band structures have been calculated and compared to the available experimental and theoretical results. The structural calculations predict that the stable phase is tetragonal. The effects of hydrostatic pressure on the behavior of band parameters such as band-gap, valence bandwidths and internal gaps (the energy gap between different parts of the valence bands) are studied using both GGA96 and EV-GGA.

High pressure study of the zinc phosphide semiconductor compound in two different phases

Energy Technology Data Exchange (ETDEWEB)

Mokhtari, Ali [Simulation Laboratory, Department of Physics, Faculty of Science, Shahrekord University, PB 115, Shahrekord (Iran, Islamic Republic of)], E-mail: mokhtari@sci.sku.ac.ir

2009-07-08

Electronic and structural properties of the zinc phosphide semiconductor compound are calculated at hydrostatic pressure using the full-potential all-electron linearized augmented plane wave plus local orbital (FP-LAPW+lo) method in both cubic and tetragonal phases. The exchange-correlation potential is treated by the generalized gradient approximation within the scheme of Perdew, Burke and Ernzerhof, GGA96 (1996 Phys. Rev. Lett. 77 3865). Also, the Engel and Vosko GGA formalism, EV-GGA (Engel and Vosko 1993 Phys. Rev. B 47 13164), is used to improve the band-gap results. Internal parameters are optimized by relaxing the atomic positions in the force directions using the Hellman-Feynman approach. The lattice constants, internal parameters, bulk modulus, cohesive energy and band structures have been calculated and compared to the available experimental and theoretical results. The structural calculations predict that the stable phase is tetragonal. The effects of hydrostatic pressure on the behavior of band parameters such as band-gap, valence bandwidths and internal gaps (the energy gap between different parts of the valence bands) are studied using both GGA96 and EV-GGA.

Stability diagrams for continuous wide-range control of two mutually delay-coupled semiconductor lasers

International Nuclear Information System (INIS)

Junges, Leandro; Gallas, Jason A C

2015-01-01

The dynamics of two mutually delay-coupled semiconductor lasers has been frequently studied experimentally, numerically, and analytically either for weak or strong detuning between the lasers. Here, we present a systematic numerical investigation spanning all detuning ranges. We report high-resolution stability diagrams for wide ranges of the main control parameters of the laser, as described by the Lang–Kobayashi model. In particular, we detail the parameter influence on dynamical performance and map the distribution of chaotic pulsations and self-generated periodic spiking with arbitrary periodicity. Special attention is given to the unfolding of regular pulse packages for both symmetric and non-symmetric configurations with respect to detuning. The influence of the delay –time on the self-organization of periodic and chaotic laser phases as a function of the coupling and detuning is also described in detail. (paper)

Rationally Controlled Synthesis of CdSexTe1-x Alloy Nanocrystals and Their Application in Efficient Graded Bandgap Solar Cells.

Science.gov (United States)

Wen, Shiya; Li, Miaozi; Yang, Junyu; Mei, Xianglin; Wu, Bin; Liu, Xiaolin; Heng, Jingxuan; Qin, Donghuan; Hou, Lintao; Xu, Wei; Wang, Dan

2017-11-08

CdSe x Te 1-x semiconductor nanocrystals (NCs), being rod-shaped/irregular dot-shaped in morphology, have been fabricated via a simple hot-injection method. The NCs composition is well controlled through varying molar ratios of Se to Te precursors. Through changing the composition of the CdSe x Te 1-x NCs, the spectral absorption of the NC thin film between 570-800 nm is proved to be tunable. It is shown that the bandgap of homogeneously alloyed CdSe x Te 1-x active thin film is nonlinearly correlated with the different compositions, which is perceived as optical bowing. The solar cell devices based on CdSe x Te 1-x NCs with the structure of ITO/ZnO/CdSe/CdSe x Te 1-x /MoO x /Au and the graded bandgap ITO/ZnO/CdSe( w / o )/CdSe x Te 1-x /CdTe/MoO x /Au are systematically evaluated. It was found that the performance of solar cells degrades almost linearly with the increase of alloy NC film thickness with respect to ITO/ZnO/CdSe/CdSe 0.2 Te 0.8 /MoO x /Au. From another perspective, in terms of the graded bandgap structure of ITO/ZnO/CdSe/CdSe x Te 1-x /CdTe/MoO x /Au, the performance is improved in contrast with its single-junction analogues. The graded bandgap structure is proved to be efficient when absorbing spectrum and the solar cells fabricated under the structure of ITO/ZnO/CdSe 0.8 Te 0.2 /CdSe 0.2 Te 0.8 /CdTe/MoO x /Au indicate power conversion efficiency (PCE) of 6.37%, a value among the highest for solution-processed inversely-structured CdSe x Te 1-x NC solar cells. As the NC solar cells are solution-processed under environmental conditions, they are promising for fabricating solar cells at low cost, roll by roll and in large area.

Water-Dependent Photonic Bandgap in Silica Artificial Opals

OpenAIRE

Gallego-Gomez, Francisco; Blanco, Alvaro; Canalejas-Tejero, Victor; Lopez, Cefe

2011-01-01

Some characteristics of silica-based structuresa-like the photonic properties of artificial opals formed by silica spheresa-can be greatly affected by the presence of adsorbed water. The reversible modification of the water content of an opal is investigated here by moderate heating (below 300 °C) and measuring in situ the changes in the photonic bandgap. Due to reversible removal of interstitial water, large blueshifts of 30 nm and a bandgap narrowing of 7% are observed. The latter is partic...

Foreword: Focus on Superconductivity in Semiconductors

Directory of Open Access Journals (Sweden)

Yoshihiko Takano

2008-01-01

Full Text Available Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm−3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors.This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008, which was held at the National Institute for Materials Science (NIMS, Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1.The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al are discussed, and In2O3 (Makise et al is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

Characterisation and application of new carboxylic acid-functionalised ruthenium complexes as dye-sensitisers for solar cells

DEFF Research Database (Denmark)

Duprez, Virginie; Biancardo, Matteo; Krebs, Frederik C

2007-01-01

A series of ruthenium complexes with and without TiO2, anchoring carboxylic acid groups have been synthesised and characterised using nuclear magnetic resonance (NMR), UV-vis and luminescence. These complexes were adsorbed on thin films of the wide band-gap semiconductor anatase and were tested a...

Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt

International Nuclear Information System (INIS)

Pandey, R.K.

2008-01-01

The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: (1) wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; (2) n-type semiconductors; (3) they exhibit well defined magnetic hysteresis loops and (4) their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A and M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of

Photooxidation of organic wastes using semiconductor nanoclusters. 1998 annual progress report

International Nuclear Information System (INIS)

Wilcoxon, J.P.

1998-01-01

'This report summarizes work after 1.5 years of a 3-year project. The authors efforts have focused on demonstration of photocatalysis of organic pollutants using nanosize MoS 2 . They investigated the effects of (1) bandgap, valence and conduction band energies; (2) surface modification of MoS 2 by deposition of metal and metal oxide islands to enhance electron transfer; and (3) use of semi-conductor semi-conductor composites to achieve improved charge separation and thus photooxidation of pollutants. They synthesized and studied nanosize MoS 2 of three different sizes and associated bandgaps and studied photoredox reactions of nanosize MoS 2 dispersed in solution and supported on a macroscopic powder. The latter would be the method of choice for use as a practical photocatalyst for water purification. As they emphasized in the original proposal, MoS 2 in nanosize form can be tuned to absorb various amounts of the solar spectrum. They discovered there is an optimal choice of absorbance characteristics and valence and conduction band levels which allow the rapid photo-oxidation of a chosen organic molecule. The advantages of having a photostable material with a tunable bandgap were demonstrated in an experiment where phenol destruction with visible (> 450 nm) light occurred at a dramatically faster rate with nanoscale MoS 2 catalysts compared to the best available previous material TiO 2 . This was the first demonstration of rapid photooxidation of an organic molecule using a completely photostable catalyst and only visible light. The possibility of transferring electrons or holes between nanoscale MoS 2 and other semiconductor materials in order to increase electron/hole lifetimes were explored. It was shown that small amounts ( 2 deposited on to TiO 2 can lead to significant (∼2) enhancements of phenol destruction rates. A number of different chemicals were photocatalyzed sucessfully to CO 2 , but most of the work centered on the destruction of phenol. This

Multi-fidelity machine learning models for accurate bandgap predictions of solids

International Nuclear Information System (INIS)

Pilania, Ghanshyam; Gubernatis, James E.; Lookman, Turab

2016-01-01

Here, we present a multi-fidelity co-kriging statistical learning framework that combines variable-fidelity quantum mechanical calculations of bandgaps to generate a machine-learned model that enables low-cost accurate predictions of the bandgaps at the highest fidelity level. Additionally, the adopted Gaussian process regression formulation allows us to predict the underlying uncertainties as a measure of our confidence in the predictions. In using a set of 600 elpasolite compounds as an example dataset and using semi-local and hybrid exchange correlation functionals within density functional theory as two levels of fidelities, we demonstrate the excellent learning performance of the method against actual high fidelity quantum mechanical calculations of the bandgaps. The presented statistical learning method is not restricted to bandgaps or electronic structure methods and extends the utility of high throughput property predictions in a significant way.

Photocatalytic and Photoelectrochemical Water Splitting on TiO2 via Photosensitization

Directory of Open Access Journals (Sweden)

Saji Thomas Kochuveedu

2016-01-01

Full Text Available The search for an alternative to replace conventional fuel has been going on for years due to the limited storage of fossil fuel and excess CO2 emission from the fuel. Using H2 as fuel has gained wide attention recently, as well as consequently splitting of water into hydrogen and oxygen. Seminal semiconductors such as TiO2 and ZnO have their position of CB and VB in alignment with water reduction and oxidation potential, respectively, but their wide bandgap allows them to absorb only UV light of the solar spectrum. Combining narrow bandgap semiconductors or other visible light active sensitizers with TiO2/ZnO is a facile route to exploit the visible light region of the solar spectrum. In this review, I make an attempt to summarize the various photosensitizers used in combination with TiO2 for water splitting with recent reports as examples.

Magneto-ballistic transport in GaN nanowires

International Nuclear Information System (INIS)

Santoruvo, Giovanni; Allain, Adrien; Ovchinnikov, Dmitry; Matioli, Elison

2016-01-01

The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuations and weak localization of electrons due to quantum interference up to ∼25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.

Magneto-ballistic transport in GaN nanowires

Energy Technology Data Exchange (ETDEWEB)

Santoruvo, Giovanni, E-mail: giovanni.santoruvo@epfl.ch; Allain, Adrien; Ovchinnikov, Dmitry; Matioli, Elison, E-mail: elison.matioli@epfl.ch [Ecole Polytechnique Fédérale de Lausanne (EPFL), CH 1015 Lausanne (Switzerland)

2016-09-05

The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuations and weak localization of electrons due to quantum interference up to ∼25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.

A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

Directory of Open Access Journals (Sweden)

Katsuaki Tanabe

2009-07-01

Full Text Available Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and plasmonic metallic structures. Technological strategies for further performance improvement from the most efficient (AlInGaP/(InGaAs/Ge triple-junction cells including the search for 1.0 eV bandgap semiconductors are discussed. Lower-dimensional systems such as quantum well and dot structures are being intensively studied to realize multiple exciton generation and multiple photon absorption to break the conventional efficiency limit. Implementation of plasmonic metallic nanostructures manipulating photonic energy flow directions to enhance sunlight absorption in thin photovoltaic semiconductor materials is also emerging.

Study on the photoresponse of amorphous In-Ga-Zn-O and zinc oxynitride semiconductor devices by the extraction of sub-gap-state distribution and device simulation.

Science.gov (United States)

Jang, Jun Tae; Park, Jozeph; Ahn, Byung Du; Kim, Dong Myong; Choi, Sung-Jin; Kim, Hyun-Suk; Kim, Dae Hwan

2015-07-22

Persistent photoconduction (PPC) is a phenomenon that limits the application of oxide semiconductor thin-film transistors (TFTs) in optical sensor-embedded displays. In the present work, a study on zinc oxynitride (ZnON) semiconductor TFTs based on the combination of experimental results and device simulation is presented. Devices incorporating ZnON semiconductors exhibit negligible PPC effects compared with amorphous In-Ga-Zn-O (a-IGZO) TFTs, and the difference between the two types of materials are examined by monochromatic photonic C-V spectroscopy (MPCVS). The latter method allows the estimation of the density of subgap states in the semiconductor, which may account for the different behavior of ZnON and IGZO materials with respect to illumination and the associated PPC. In the case of a-IGZO TFTs, the oxygen flow rate during the sputter deposition of a-IGZO is found to influence the amount of PPC. Small oxygen flow rates result in pronounced PPC, and large densities of valence band tail (VBT) states are observed in the corresponding devices. This implies a dependence of PPC on the amount of oxygen vacancies (VO). On the other hand, ZnON has a smaller bandgap than a-IGZO and contains a smaller density of VBT states over the entire range of its bandgap energy. Here, the concept of activation energy window (AEW) is introduced to explain the occurrence of PPC effects by photoinduced electron doping, which is likely to be associated with the formation of peroxides in the semiconductor. The analytical methodology presented in this report accounts well for the reduction of PPC in ZnON TFTs, and provides a quantitative tool for the systematic development of phototransistors for optical sensor-embedded interactive displays.

Resonance fluorescence spectrum in a two-band photonic bandgap crystal

Science.gov (United States)

Lee, Ray-Kuang; Lai, Yinchieh

2003-05-01

Steady state resonance fluorescence spectra from a two-level atom embedded in a photonic bandgap crystal and resonantly driven by a classical pump light are calculated. The photonic crystal is considered to be with a small bandgap which is in the order of magnitude of the Rabi frequency and is modeled by the anisotropic two-band dispersion relation. Non-Markovian noises caused by the non-uniform distribution of photon density states near the photonic bandgap are taken into account by a new approach which linearizes the optical Bloch equations by using the Liouville operator expansion. Fluorescence spectra that only exhibit sidebands of the Mollow triplet are found, indicating that there is no coherent Rayleigh scattering process.

Continuous-wave lasing in an organic-inorganic lead halide perovskite semiconductor

Science.gov (United States)

Jia, Yufei; Kerner, Ross A.; Grede, Alex J.; Rand, Barry P.; Giebink, Noel C.

2017-12-01

Hybrid organic-inorganic perovskites have emerged as promising gain media for tunable, solution-processed semiconductor lasers. However, continuous-wave operation has not been achieved so far1-3. Here, we demonstrate that optically pumped continuous-wave lasing can be sustained above threshold excitation intensities of 17 kW cm-2 for over an hour in methylammonium lead iodide (MAPbI3) distributed feedback lasers that are maintained below the MAPbI3 tetragonal-to-orthorhombic phase transition temperature of T ≈ 160 K. In contrast with the lasing death phenomenon that occurs for pure tetragonal-phase MAPbI3 at T > 160 K (ref. 4), we find that continuous-wave gain becomes possible at T ≈ 100 K from tetragonal-phase inclusions that are photogenerated by the pump within the normally existing, larger-bandgap orthorhombic host matrix. In this mixed-phase system, the tetragonal inclusions function as carrier recombination sinks that reduce the transparency threshold, in loose analogy to inorganic semiconductor quantum wells, and may serve as a model for engineering improved perovskite gain media.

Photonic bandgap narrowing in conical hollow core Bragg fibers

Energy Technology Data Exchange (ETDEWEB)

Ozturk, Fahri Emre; Yildirim, Adem; Kanik, Mehmet [UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey); Bayindir, Mehmet, E-mail: bayindir@nano.org.tr [UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey); Department of Physics, Bilkent University, 06800 Ankara (Turkey)

2014-08-18

We report the photonic bandgap engineering of Bragg fibers by controlling the thickness profile of the fiber during the thermal drawing. Conical hollow core Bragg fibers were produced by thermal drawing under a rapidly alternating load, which was applied by introducing steep changes to the fiber drawing speed. In conventional cylindrical Bragg fibers, light is guided by omnidirectional reflections from interior dielectric mirrors with a single quarter wave stack period. In conical fibers, the diameter reduction introduced a gradient of the quarter wave stack period along the length of the fiber. Therefore, the light guided within the fiber encountered slightly smaller dielectric layer thicknesses at each reflection, resulting in a progressive blueshift of the reflectance spectrum. As the reflectance spectrum shifts, longer wavelengths of the initial bandgap cease to be omnidirectionally reflected and exit through the cladding, which narrows the photonic bandgap. A narrow transmission bandwidth is particularly desirable in hollow waveguide mid-infrared sensing schemes, where broadband light is coupled to the fiber and the analyte vapor is introduced into the hollow core to measure infrared absorption. We carried out sensing simulations using the absorption spectrum of isopropyl alcohol vapor to demonstrate the importance of narrow bandgap fibers in chemical sensing applications.

Advances in semiconductor lasers

CERN Document Server

Coleman, James J; Jagadish, Chennupati

2012-01-01

Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

Theoretical Investigation of Bismuth-Based Semiconductors for Photocatalytic Applications

KAUST Repository

Laradhi, Shaikhah

2017-11-01

Converting solar energy to clean fuel has gained remarkable attention as an emerged renewable energy resource but optimum efficiency in photocatalytic applications has not yet been reached. One of the dominant factors is designing efficient photocatalytic semiconductors. The research reveals a theoretical investigation of optoelectronic properties of bismuth-based metal oxide and oxysulfide semiconductors using highly accurate first-principles quantum method based on density functional theory along with the range-separated hybrid HSE06 exchange-correlation functional. First, bismuth titanate compounds including Bi12TiO20, Bi4Ti3O12, and Bi2Ti2O7 were studied in a combined experimental and theoretical approach to prove its photocatalytic activity under UV light. They have unique bismuth layered structure, tunable electronic properties, high dielectric constant and low electron and effective masses in one crystallographic direction allowing for good charge separation and carrier diffusion properties. The accuracy of the investigation was determined by the good agreement between experimental and theoretical values. Next, BiVO4 with the highest efficiency for oxygen evolution was investigated. A discrepancy between the experimental and theoretical bandgap was reported and inspired a systematic study of all intrinsic defects of the material and the corresponding effect on the optical and transport properties. A candidate defective structure was proposed for an efficient photocatalytic performance. To overcome the carrier transport limitation, a mild hydrogen treatment was also introduced. Carrier lifetime was enhanced due to a significant reduction of trap-assisted recombination, either via passivation of deep trap states or reduction of trap state density. Finally, an accurate theoretical approach to design a new family of semiconductors with enhanced optoelectronic properties for water splitting was proposed. We simulated the solid solutions Bi1−xRExCuOS (RE = Y, La

Low-bandgap polymer photovoltaic cells

NARCIS (Netherlands)

Duren, van J.K.J.; Dhanabalan, A.; Hal, van P.A.; Janssen, R.A.J.

2001-01-01

A-novel low-bandgap conjugated polymer (PTPTB, Eg = ~1.6 eV), consisting of alternating electron-rich N-dodecyl-2,5-bis(2'-thienyl)pyrrole (TPT) and electron-deficient 2,1,3-benzothiadiazole (B) units, as a donor material is studied together with a soluble fullerene derivative (PCBM) as acceptor to

Optoelectronic and transport properties of LiBZ (B = Al, In, Ga and Z = Si, Ge, Sn) semiconductors

Science.gov (United States)

Shah, Syed Hatim; Khan, Shah Haider; Laref, A.; Murtaza, G.

2018-02-01

Half-Heusler compounds LiBZ (B = Al, In, Ga and Z = Si, Ge, Sn) are comprehensively investigated using state of the art full potential linearized augmented plane wave (FP-LAPW) method. Stable geometry of the compounds obtained through energy minimization procedure. Lattice constant increased while bulk modulus decreased in replacing the ions of size increasing from top to bottom of the periodic table. Band structure calculations show LiInGe and LiInSn as direct bandgap while LiAlSi, LiInGe and LiGaSn indirect bandgap semiconductors. Density of states demonstrates mixed s, p, d states of cations and anions in the valence and conduction bands. These compounds have mixed ionic and covalent bonding. Compounds show dominant optical response in the visible and low frequency ultraviolet energy region. The transport properties of the compounds are described in terms of Seebeck coefficient, electrical and thermal conductivities. The calculated figure of merit of LiAlSi is in good agreement with the recent experimental results.

Binary copper oxide semiconductors: From materials towards devices

Energy Technology Data Exchange (ETDEWEB)

Meyer, B.K.; Polity, A.; Reppin, D.; Becker, M.; Hering, P.; Klar, P.J.; Sander, T.; Reindl, C.; Benz, J.; Eickhoff, M.; Heiliger, C.; Heinemann, M. [1. Physics Institute, Justus-Liebig University of Giessen (Germany); Blaesing, J.; Krost, A. [Institute of Experimental Physics (IEP), Otto-von-Guericke University Magdeburg (Germany); Shokovets, S. [Institute of Physics, Ilmenau University of Technology (Germany); Mueller, C.; Ronning, C. [Institute of Solid State Physics, Friedrich Schiller University Jena (Germany)

2012-08-15

Copper-oxide compound semiconductors provide a unique possibility to tune the optical and electronic properties from insulating to metallic conduction, from bandgap energies of 2.1 eV to the infrared at 1.40 eV, i.e., right into the middle of the efficiency maximum for solar-cell applications. Three distinctly different phases, Cu{sub 2}O, Cu{sub 4}O{sub 3}, and CuO, of this binary semiconductor can be prepared by thin-film deposition techniques, which differ in the oxidation state of copper. Their material properties as far as they are known by experiment or predicted by theory are reviewed. They are supplemented by new experimental results from thin-film growth and characterization, both will be critically discussed and summarized. With respect to devices the focus is on solar-cell performances based on Cu{sub 2}O. It is demonstrated by photoelectron spectroscopy (XPS) that the heterojunction system p-Cu{sub 2}O/n-AlGaN is much more promising for the application as efficient solar cells than that of p-Cu{sub 2}O/n-ZnO heterojunction devices that have been favored up to now. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Where science fiction meets reality? With oxide semiconductors.

Energy Technology Data Exchange (ETDEWEB)

Fortunato, E.; Martins, R. [CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, CEMOP-UNINOVA, 2829-516 Caparica (Portugal)

2011-09-15

Transparent electronics is today one of the most advanced topics for a wide range of device applications, where the key components are wide band gap semiconductors, where oxides of different origin play an important role, not only as passive components but also as active components similar to what we observe in conventional semiconductors. As passive components they include the use of these materials as dielectrics for a wide range of electronic devices and also as transparent electrical conductors for use in several optoelectronic applications, such as liquid crystal displays, organic light emitting diodes, solar cells, optical sensors etc. As active materials, they exploit the use of truly electronic semiconductors where the main emphasis is being put on transparent thin film transistors, light emitting diodes, lasers, ultraviolet sensors and integrated circuits among others. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Two-phase jet impingement cooling for high heat flux wide band-gap devices using multi-scale porous surfaces

International Nuclear Information System (INIS)

Joshi, Shailesh N.; Dede, Ercan M.

2017-01-01

Highlights: • Jet impingement with phase change on multi-scale porous surfaces is investigated. • Porous coated flat, pin-fin, open tunnel, and closed tunnel structures are studied. • Boiling curve, heat transfer coefficient, and pressure drop metrics are reported. • Flow visualization shows vapor removal from the surface is a key aspect of design. • The porous coated pin-fin surface exhibits superior two-phase cooling performance. - Abstract: In the future, wide band-gap (WBG) devices such as silicon carbide and gallium nitride will be widely used in automotive power electronics due to performance advantages over silicon-based devices. The high heat fluxes dissipated by WBG devices pose extreme cooling challenges that demand the use of advanced thermal management technologies such as two-phase cooling. In this light, we describe the performance of a submerged two-phase jet impingement cooler in combination with porous coated heat spreaders and multi-jet orifices. The cooling performance of four different porous coated structures was evaluated using R-245fa as the coolant at sub-cooling of 5 K. The results show that the boiling performance of a pin-fin heat spreader is the highest followed by that for an open tunnel (OPT), closed tunnel (CLT), and flat heat spreader. Furthermore, the flat heat spreader demonstrated the lowest critical heat flux (CHF), while the pin-fin surface sustained a heat flux of 218 W/cm 2 without reaching CHF. The CHF values of the OPT and CLT surfaces were 202 W/cm 2 and 194 W/cm 2 , respectively. The pin-fin heat spreader has the highest two-phase heat transfer coefficient of 97,800 W/m 2 K, while the CLT surface has the lowest heat transfer coefficient of 69,300 W/m 2 K, both at a heat flux of 165 W/cm 2 . The variation of the pressure drop of all surfaces is similar for the entire range of heat fluxes tested. The flat heat spreader exhibited the least pressure drop, 1.73 kPa, while the CLT surface had the highest, 2.17 kPa at a

Compositional dependence of the band-gap of Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys

Energy Technology Data Exchange (ETDEWEB)

Wendav, Torsten, E-mail: wendav@physik.hu-berlin.de [AG Theoretische Optik & Photonik, Humboldt Universität zu Berlin, Newtonstr. 15, 12489 Berlin (Germany); Fischer, Inga A.; Oehme, Michael; Schulze, Jörg [Institut für Halbleitertechnik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany); Montanari, Michele; Zoellner, Marvin Hartwig; Klesse, Wolfgang [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Capellini, Giovanni [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università Roma Tre, Viale Marconi 446, 00146 Roma (Italy); Driesch, Nils von den; Buca, Dan [Peter Grünberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, 52428 Jülich (Germany); Busch, Kurt [AG Theoretische Optik & Photonik, Humboldt Universität zu Berlin, Newtonstr. 15, 12489 Berlin (Germany); Max-Born-Institut, Max-Born-Str. 2 A, 12489 Berlin (Germany)

2016-06-13

The group-IV semiconductor alloy Ge{sub 1−x−y}Si{sub x}Sn{sub y} has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions about the optical transition energy.

Miniature semiconductor detectors for in vivo dosimetry

International Nuclear Information System (INIS)

Rosenfeld, A. B.; Cutajar, D.; Lerch, M. L. F.; Takacs, G.; Cornelius, I. M.; Yudelev, M.; Zaider, M.

2006-01-01

Silicon mini-semiconductor detectors are found in wide applications for in vivo personal dosimetry and dosimetry and Micro-dosimetry of different radiation oncology modalities. These applications are based on integral and spectroscopy modes of metal oxide semiconductor field effect transistor and silicon p-n junction detectors. The advantages and limitations of each are discussed. (authors)

Large bandgap reduced graphene oxide (rGO) based n-p + heterojunction photodetector with improved NIR performance

Science.gov (United States)

Singh, Manjri; Kumar, Gaurav; Prakash, Nisha; Khanna, Suraj P.; Pal, Prabir; Singh, Surinder P.

2018-04-01

Integration of two-dimensional reduced graphene oxide (rGO) with conventional Si semiconductor offers novel strategies for realizing broadband photodiode with enhanced device performance. In this quest, we have synthesized large bandgap rGO and fabricated metal-free broadband (300–1100 nm) back-to-back connected np-pn hybrid photodetector utilizing drop casted n-rGO/p +-Si heterojunctions with high performance in NIR region (830 nm). With controlled illumination, the device exhibited a peak responsivity of 16.7 A W‑1 and peak detectivity of 2.56 × 1012 Jones under 830 nm illumination (11 μW cm‑2) at 1 V applied bias with fast response (∼460 μs) and recovery time (∼446 μs). The fabricated device demonstrated excellent repeatability, durability and photoswitching behavior with high external quantum efficiency (∼2.5 × 103%), along with ultrasensitive behavior at low light conditions.

Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide

CERN Document Server

Pereira, LMC; Wahl, U

Scientific findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last fe...

Anomalous band-gap bowing of AlN1−xPx alloy

International Nuclear Information System (INIS)

Winiarski, M.J.; Polak, M.; Scharoch, P.

2013-01-01

Highlights: •Structural and electronic properties of AlN 1−x P x from first principles. •The supercell and the virtual crystall approximation methods applied and compared. •Anomalously high band-gap bowing found. •Similarities of band-gap behavior to that in BN 1−x P x noticed. •Performance of MBJLDA with the pseudopotential approach discussed. -- Abstract: Electronic structure of zinc blende AlN 1−x P x alloy has been calculated from first principles. Structural optimization has been performed within the framework of LDA and the band-gaps calculated with the modified Becke–Jonson (MBJLDA) method. Two approaches have been examined: the virtual crystal approximation (VCA) and the supercell-based calculations (SC). The composition dependence of the lattice parameter obtained from the SC obeys Vegard’s law whereas the volume optimization in the VCA leads to an anomalous bowing of the lattice constant. A strong correlation between the band-gaps and the structural parameter in the VCA method has been observed. On the other hand, in the SC method the supercell size and atoms arrangement (clustered vs. uniform) appear to have a great influence on the computed band-gaps. In particular, an anomalously big band-gap bowing has been found in the case of a clustered configuration with relaxed geometry. Based on the performed tests and obtained results some general features of MBJLDA are discussed and its performance for similar systems predicted

Ionic exchange of Hf donor impurities in the wide-gap semiconductor Tm2O3

International Nuclear Information System (INIS)

Munoz, E.L.; Darriba, G.N.; Bibiloni, A.G.; Errico, L.A.; Renteria, M.

2010-01-01

The ionic exchange of Hf donor impurities in substitutional cationic sites of the cubic (bixbyite) phase of the wide-gap semiconductor Tm 2 O 3 was studied. The doping process was performed by ball-milling-assisted solid-state reaction of Tm 2 O 3 and neutron-activated m-HfO 2 . 181 Ta atoms, obtained by the β-decay of the 181 Hf-isotope, were used as probes in time-differential perturbed-angular-correlation (TDPAC) experiments carried out after each step of the doping process. The measured hyperfine interactions at 181 Ta sites enabled the electric-field gradient (EFG) characterization at representative Hf impurity sites of each step of the process. The efficiency and substitutional character of the exchange process is discussed and elucidated in the framework of an empirical EFG systematic established in isostructural rare-earth bixbyite sesquioxides.

A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells.

Science.gov (United States)

Guo, Fei; Li, Ning; Fecher, Frank W; Gasparini, Nicola; Ramirez Quiroz, Cesar Omar; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V; Radmilović, Velimir R; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

2015-07-16

The multi-junction concept is the most relevant approach to overcome the Shockley-Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies.

Overshoot mechanism in transient excitation of THz and Gunn oscillations in wide-bandgap semiconductors

Science.gov (United States)

Momox, Ernesto; Zakhleniuk, Nick; Balkan, Naci

2012-11-01

A detailed study of high-field transient and direct-current (DC) transport in GaN-based Gunn diode oscillators is carried out using the commercial simulator Sentaurus Device. Applicability of drift-diffusion (DD) and hydrodynamic (HD) models to high-speed, high-frequency devices is discussed in depth, and the results of the simulations from these models are compared. It is shown, for a highly homogeneous device based on a short (2 μm) supercritically doped (1017 cm-3) GaN specimen, that the DD model is unable to correctly take into account some essential physical effects which determine the operation mode of the device. At the same time, the HD model is ideally suited to solve such problems due to its ability to incorporate non-local effects. We show that the velocity overshoot near the device contacts and space charge injection and extraction play a crucial role in defining the operation mode of highly homogeneous short diodes in both the transient regime and the voltage-controlled oscillation regime. The transient conduction current responses are fundamentally different in the DD and HD models. The DD current simply repeats the velocity-field (v-F) characteristics, and the sample remains in a completely homogeneous state. In the HD model, the transient current pulse with a full width at half maximum of approximately 0.2 ps is increased about twofold due to the carrier injection (extraction) into (from) the active region and the velocity overshoot. The electron gas is characterized by highly inhomogeneous distributions of the carrier density, the electric field and the electron temperature. The simulation of the DC steady states of the diodes also shows very different results for the two models. The HD model shows the trapped stable anodic domain in the device, while the DD model completely retains all features of the v-F characteristics in a homogeneous gas. Simulation of the voltage-controlled oscillator shows that it operates in the accumulation layer mode generating microwave signals at 0.3 to 0.7 THz. In spite of the fact that the known criterion of a Gunn domain mode n 0 L > ( n 0 L)0 was satisfied, no Gunn domains were observed. The explanation of this phenomenon is given.

Laser ablation and deposition of wide bandgap semiconductors: plasma and nanostructure of deposits diagnosis

Science.gov (United States)

Sanz, M.; López-Arias, M.; Rebollar, E.; de Nalda, R.; Castillejo, M.

2011-12-01

Nanostructured CdS and ZnS films on Si (100) substrates were obtained by nanosecond pulsed laser deposition at the wavelengths of 266 and 532 nm. The effect of laser irradiation wavelength on the surface structure and crystallinity of deposits was characterized, together with the composition, expansion dynamics and thermodynamic parameters of the ablation plume. Deposits were analyzed by environmental scanning electron microscopy, atomic force microscopy and X-ray diffraction, while in situ monitoring of the plume was carried out with spectral, temporal and spatial resolution by optical emission spectroscopy. The deposits consist of 25-50 nm nanoparticle assembled films but ablation in the visible results in larger aggregates (150 nm) over imposed on the film surface. The aggregate free films grown at 266 nm on heated substrates are thicker than those grown at room temperature and in the former case they reveal a crystalline structure congruent with that of the initial target material. The observed trends are discussed in reference to the light absorption step, the plasma composition and the nucleation processes occurring on the substrate.

Final Technical Report

Energy Technology Data Exchange (ETDEWEB)

Li, Lian [West Virginia Univ., Morgantown, WV (United States)

2017-03-08

Our BES supported program integrates molecular beam epitaxy growth with in situ atomic scale imaging using scanning tunneling microscopy/spectroscopy and atomic force microscopy. Aided by density functional theory calculations, we explore enhanced functionalities emerging from the interplay of strain, proximity, and spin-orbit interactions in heterostructures of wide band gap semiconductors, graphene, and Dirac materials, focusing on three thrusts: 1) doping wide bandgap semiconductors and graphene; 2) graphene nanoribbons and graphene-semiconductor heterostructures; and 3) Dirac materials. Our findings and discoveries have led to the publication of one book chapter and twenty-three refereed journal articles, including several in high impact journals such as Nature Communications, Physical Review Letters, and Nano Letters. Highlights of each thrust are provided in the report.

Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

Energy Technology Data Exchange (ETDEWEB)

Feng, Liefeng, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn; Yang, Xiufang; Wang, Cunda; Yao, Dongsheng [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072 (China); Li, Yang [Business and Vocational College of Hainan, Haikou 570203 (China); Li, Ding; Hu, Xiaodong [Research Center for Wide Band Gap Semiconductors, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Li, Hongru, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn [State Key Laboratory for Medicinal Chemistry and Biology, College of Pharmacy, Nankai University, Tianjin 300071 (China)

2015-04-15

The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by I{sub th}{sup l} and I{sub th}{sup u}, as shown in Fig. 2; I{sub th}{sup l} is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; I{sub th}{sup u} is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (V{sub j}) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at I{sub th}{sup l} and I{sub th}{sup u}. The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region.

Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

International Nuclear Information System (INIS)

Feng, Liefeng; Yang, Xiufang; Wang, Cunda; Yao, Dongsheng; Li, Yang; Li, Ding; Hu, Xiaodong; Li, Hongru

2015-01-01

The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by I th l and I th u , as shown in Fig. 2; I th l is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; I th u is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (V j ) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at I th l and I th u . The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region

Energy level alignment and sub-bandgap charge generation in polymer:fullerene bulk heterojunction solar cells.

Science.gov (United States)

Tsang, Sai-Wing; Chen, Song; So, Franky

2013-05-07

Using charge modulated electroabsorption spectroscopy (CMEAS), for the first time, the energy level alignment of a polymer:fullerene bulk heterojunction photovoltaic cell is directly measured. The charge-transfer excitons generated by the sub-bandgap optical pumping are coupled with the modulating electric field and introduce subtle changes in optical absorption in the sub-bandgap region. This minimum required energy for sub-bandgap charge genreation is defined as the effective bandgap. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Coulomb engineering of the bandgap and excitons in two-dimensional materials

Science.gov (United States)

Raja, Archana; Chaves, Andrey; Yu, Jaeeun; Arefe, Ghidewon; Hill, Heather M.; Rigosi, Albert F.; Berkelbach, Timothy C.; Nagler, Philipp; Schüller, Christian; Korn, Tobias; Nuckolls, Colin; Hone, James; Brus, Louis E.; Heinz, Tony F.; Reichman, David R.; Chernikov, Alexey

2017-01-01

The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the unusual strength of the Coulomb interaction in these materials and its environmental sensitivity. Here, we show that by engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS2 and WSe2 by hundreds of meV. We exploit this behaviour to present an in-plane dielectric heterostructure with a spatially dependent bandgap, as an initial step towards the creation of diverse lateral junctions with nanoscale resolution. PMID:28469178

Photoelectronic properties of semiconductors

CERN Document Server

Bube, Richard H

1992-01-01

The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

Multi-cavity locally resonant structure with the low frequency and broad band-gaps

Directory of Open Access Journals (Sweden)

Jiulong Jiang

2016-11-01

Full Text Available A multi-cavity periodic structure with the characteristic of local resonance was proposed in the paper. The low frequency band-gap structure was comparatively analyzed by the finite element method (FEM and electric circuit analogy (ECA. Low frequency band-gap can be opened through the dual influence of the coupling’s resonance in the cavity and the interaction among the couplings between structures. Finally, the influence of the structural factors on the band-gap was analyzed. The results show that the structure, which is divided into three parts equally, has a broader effective band-gap below the frequency of 200 Hz. It is also proved that reducing the interval between unit structures can increase the intensity of the couplings among the structures. And in this way, the width of band-gap would be expanded significantly. Through the parameters adjustment, the structure enjoys a satisfied sound insulation effect below the frequency of 500Hz. In the area of low frequency noise reduction, the structure has a lot of potential applications.

Destruction-polymerization transformations as a source of radiation-induced extended defects in chalcogenide glassy semiconductors

International Nuclear Information System (INIS)

Shpotyuk, Oleh; Filipecki, Jacek; Shpotyuk, Mykhaylo

2013-01-01

Long-wave shift of the optical transmission spectrum in the region of fundamental optical absorption edge is registered for As 2 S 3 chalcogenide glassy semiconductors after γ-irradiation. This effect is explained in the frameworks of the destruction-polymerization transformations concept by accepting the switching of the heteropolar As-S covalent bonds into homopolar As-As ones. It is assumed that (As 4 + ; S 1 - ) defect pairs are created under such switching. Formula to calculate content of the induced defects in chalcogenide glassy semiconductors is proposed. It is assumed that defects concentration depends on energy of broken covalent bond, bond-switching energy balance, correlation energy, optical band-gap and energy of excitation light. It is shown that theoretically calculated maximally possible content of radiation-induced defects in As 2 S 3 is about 1.6% while concentration of native defects is negligible. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Computational Search for Two-Dimensional MX2 Semiconductors with Possible High Electron Mobility at Room Temperature

Directory of Open Access Journals (Sweden)

Zhishuo Huang

2016-08-01

Full Text Available Neither of the two typical two-dimensional materials, graphene and single layer MoS 2 , are good enough for developing semiconductor logical devices. We calculated the electron mobility of 14 two-dimensional semiconductors with composition of MX 2 , where M (=Mo, W, Sn, Hf, Zr and Pt are transition metals, and Xs are S, Se and Te. We approximated the electron phonon scattering matrix by deformation potentials, within which long wave longitudinal acoustical and optical phonon scatterings were included. Piezoelectric scattering in the compounds without inversion symmetry is also taken into account. We found that out of the 14 compounds, WS 2 , PtS 2 and PtSe 2 are promising for logical devices regarding the possible high electron mobility and finite band gap. Especially, the phonon limited electron mobility in PtSe 2 reaches about 4000 cm 2 ·V - 1 ·s - 1 at room temperature, which is the highest among the compounds with an indirect bandgap of about 1.25 eV under the local density approximation. Our results can be the first guide for experiments to synthesize better two-dimensional materials for future semiconductor devices.

Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

Directory of Open Access Journals (Sweden)

Zheng Huang

2015-09-01

Full Text Available We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory. Our results show that the thermoelectric performance increases from 3C to 6H, 4H, and 2H structures with an increase of hexagonality for SiC. However, for GaN and ZnO, their power factors show a very weak dependence on the polytype. Detailed analysis of the thermoelectric properties with respect to temperature and carrier concentration of 4H-SiC, 2H-GaN, and 2H-ZnO shows that the figure of merit of these three compounds increases with temperature, indicating the promising potential applications of these thermoelectric materials at high temperature. The significant difference of the polytype-dependent thermoelectric properties among SiC, GaN, and ZnO might be related to the competition between covalency and ionicity in these semiconductors. Our calculations may provide a new way to enhance the thermoelectric properties of wide-band-gap semiconductors through atomic structure design, especially hexagonality design for SiC.

Semiconductor plasmonic crystals: active control of THz extinction

International Nuclear Information System (INIS)

Schaafsma, M C; Rivas, J Gómez

2013-01-01

We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are characterized by a large extinction and narrow bandwidth, which can be tuned by controlling the charge carrier density in the semiconductor. The underlaying mechanism leading to this tuneability is explained using the coupled dipole approximation and considering GaAs as the semiconductor. The enhanced THz extinction in arrays of GaAs particles could be tuned in a wide range by optical pumping of charge carriers. (invited article)

Solid-state NMR of inorganic semiconductors.

Science.gov (United States)

Yesinowski, James P

2012-01-01

Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

pn junctions based on a single transparent perovskite semiconductor BaSnO3

Science.gov (United States)

Kim, Hoon Min; Kim, Useong; Park, Chulkwon; Kwon, Hyukwoo; Lee, Woongjae; Kim, Tai Hoon; Kim, Kee Hoon; Char, Kookrin; Mdpl, Department Of Physics; Astronomy Team; Censcmr, Department Of Physics; Astronomy Team

2014-03-01

Successful p doping of transparent oxide semiconductor will further increase its potential, especially in the area of optoelectronic applications. We will report our efforts to dope the BaSnO3 (BSO) with K by pulsed laser deposition. Although the K doped BSO exhibits rather high resistivity at room temperature, its conductivity increases dramatically at higher temperatures. Furthermore, the conductivity decreases when a small amount of oxygen was removed from the film, consistent with the behavior of p type doped oxides. We have fabricated pn junctions by using K doped BSO as a p type and La doped BSO as an n type material. I_V characteristics of these devices show the typical rectifying behavior of pn junctions. We will present the analysis of the junction properties from the temperature dependent measurement of their electrical properties, which shows that the I_V characteristics are consistent with the material parameters such as the carrier concentration, the mobility, and the bandgap. Our demonstration of pn junctions based on a single transparent perovskite semiconductor further enhances the potential of BSO system with high mobility and stability.

Actively doped solid core Photonic Bandgap Fiber

DEFF Research Database (Denmark)

Broeng, Jes; Olausson, Christina Bjarnal Thulin; Lyngsøe, Jens Kristian

2010-01-01

Solid photonic bandgap fibers offer distributed spectral filtering with extraordinary high suppression. This opens new possibilities of artificially tailoring the gain spectrum of fibers. We present record-performance of such fibers and outline their future applications....

The microscopic origin of the doping limits in semiconductors and wide-gap materials and recent developments in overcoming these limits: a review

International Nuclear Information System (INIS)

Zhang, S.B.

2002-01-01

This paper reviews the recent developments in first-principles total energy studies of the phenomenological equilibrium 'doping limit rule' that governs the maximum electrical conductivity of semiconductors via extrinsic or intrinsic doping. The rule relates the maximum equilibrium carrier concentrations (electrons or holes) of a wide range of materials to their respective band alignments. The microscopic origin of the mysterious 'doping limit rule' is the spontaneous formation of intrinsic defects: e.g., in n-type semiconductors, the formation of cation vacancies. Recent developments in overcoming the equilibrium doping limits are also discussed: it appears that a common route to significantly increase carrier concentrations is to expand the physically accessible range of the dopant atomic chemical potential by non-equilibrium doping processes, which not only suppresses the formation of the intrinsic defects but also lowers the formation energy of the impurities, thereby significantly increasing their solubility. (author)

Fundamentals of semiconductor lasers

CERN Document Server

Numai, Takahiro

2015-01-01

This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

Predicting suitable optoelectronic properties of monoclinic VON semiconductor crystals for photovoltaics using accurate first-principles computations

KAUST Repository

Harb, Moussab

2015-01-01

Using accurate first-principles quantum calculations based on DFT (including the perturbation theory DFPT) with the range-separated hybrid HSE06 exchange-correlation functional, we predict essential fundamental properties (such as bandgap, optical absorption coefficient, dielectric constant, charge carrier effective masses and exciton binding energy) of two stable monoclinic vanadium oxynitride (VON) semiconductor crystals for solar energy conversion applications. In addition to the predicted band gaps in the optimal range for making single-junction solar cells, both polymorphs exhibit relatively high absorption efficiencies in the visible range, high dielectric constants, high charge carrier mobilities and much lower exciton binding energies than the thermal energy at room temperature. Moreover, their optical absorption, dielectric and exciton dissociation properties are found to be better than those obtained for semiconductors frequently utilized in photovoltaic devices like Si, CdTe and GaAs. These novel results offer a great opportunity for this stoichiometric VON material to be properly synthesized and considered as a new good candidate for photovoltaic applications.

Predicting suitable optoelectronic properties of monoclinic VON semiconductor crystals for photovoltaics using accurate first-principles computations

KAUST Repository

Harb, Moussab

2015-08-26

Using accurate first-principles quantum calculations based on DFT (including the perturbation theory DFPT) with the range-separated hybrid HSE06 exchange-correlation functional, we predict essential fundamental properties (such as bandgap, optical absorption coefficient, dielectric constant, charge carrier effective masses and exciton binding energy) of two stable monoclinic vanadium oxynitride (VON) semiconductor crystals for solar energy conversion applications. In addition to the predicted band gaps in the optimal range for making single-junction solar cells, both polymorphs exhibit relatively high absorption efficiencies in the visible range, high dielectric constants, high charge carrier mobilities and much lower exciton binding energies than the thermal energy at room temperature. Moreover, their optical absorption, dielectric and exciton dissociation properties are found to be better than those obtained for semiconductors frequently utilized in photovoltaic devices like Si, CdTe and GaAs. These novel results offer a great opportunity for this stoichiometric VON material to be properly synthesized and considered as a new good candidate for photovoltaic applications.

Spectroscopic Evidence for Exceptional Thermal Contribution to Electron-Beam Induced Fragmentation

Energy Technology Data Exchange (ETDEWEB)

Caldwell, Marissa A.; Haynor, Ben; Aloni, Shaul; Ogletree, D. Frank; Wong, H.-S. Philip; Urban, Jeffrey J.; Milliron, Delia J.

2010-11-16

While electron beam induced fragmentation (EBIF) has been reported to result in the formation of nanocrystals of various compositions, the physical forces driving this phenomenon are still poorly understood. We report EBIF to be a much more general phenomenon than previously appreciated, operative across a wide variety of metals, semiconductors and insulators. In addition, we leverage the temperature dependent bandgap of several semiconductors to quantify -- using in situ cathodoluminescence spectroscopy -- the thermal contribution to EBIF, and find extreme temperature rises upwards of 1000K.

Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures

Science.gov (United States)

Wang, Jiaming; Xu, Fujun; Zhang, Xia; An, Wei; Li, Xin-Zheng; Song, Jie; Ge, Weikun; Tian, Guangshan; Lu, Jing; Wang, Xinqiang; Tang, Ning; Yang, Zhijian; Li, Wei; Wang, Weiying; Jin, Peng; Chen, Yonghai; Shen, Bo

2014-01-01

Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to the unavailable of type-II ones. This seriously restricts the designing flexibility for optoelectronic devices and consequently the relevant performance of this material system. Here we show a brandnew type-II band alignment of the lattice-matched In0.17Al0.83N/GaN heterostructure from the perspective of both experimental observations and first-principle theoretical calculations. The band discontinuity is dominated by the conduction band offset ΔEC, with a small contribution from the valence band offset ΔEV which equals 0.1 eV (with being above). Our work may open up new prospects to realize high-performance III-Nitrides optoelectronic devices based on type-II energy band engineering. PMID:25283334

Optical devices based on liquid crystal photonic bandgap fibers

DEFF Research Database (Denmark)

Alkeskjold, Thomas Tanggaard

2005-01-01

the waveguiding mechanism of LC filled PCFs. The principle of tunable fibers based on LCs is thereafter discussed and an alignment and coating study of LC in capillaries is presented. Next, the Liquid Crystal Photonic BandGap (LCPBG) fiber is presented and the waveguiding mechanism is analyzed through plane...... hole. The presence of a LC in the holes of the PCF transforms the fiber from a Total Internal Reflection (TIR) guiding type into a Photonic BandGap (PBG) guiding type, where light is confined to the silica core by coherent scattering from the LC-billed holes. The high dielectric and optical anisotropy...

Semiconductor

International Nuclear Information System (INIS)

2000-01-01

This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

Tensile strain induced narrowed bandgap of TiO{sub 2} films: Utilizing the two-way shape memory effect of TiNiNb substrate and in-situ mechanical bending

Energy Technology Data Exchange (ETDEWEB)

Du, Minshu, E-mail: dms1223@126.com [Department of Materials Science and Engineering, China University of Petroleum at Beijing, Beijing, 102249 (China); Center for Electrochemistry, Department of Chemistry, The University of Texas at Austin, Austin, Texas, 78712 (United States); Cui, Lishan; Wan, Qiong [Department of Materials Science and Engineering, China University of Petroleum at Beijing, Beijing, 102249 (China)

2016-05-15

Graphical abstract: - Highlights: • Imposed tensile strain to anatase TiO{sub 2} nanofilm by using the two-way shape memory effect of NiTiNb substrate. • Imposed tensile strain to rutile TiO{sub 2} thin film by in-situ mechanical bending. • Tauc plot based on the PEC-tested auction spectrum was utilized to precisely determine the bandgap of TiO{sub 2}. • Tensile strain narrowed the bandgap of anatase TiO{sub 2} by 60 meV and rutile TiO{sub 2} by 70 meV. • Tensile strain contributes to a 1.5 times larger photocurrent for the water oxidation reaction. - Abstract: Elastic strain is one of the methods to alter the band gap of semiconductors. However, relevant experimental work is limited due to the difficulty in imposing strain. Two new methods for imposing tensile strain to TiO{sub 2} film were introduced here. One is by utilizing the two-way shape memory effect of NiTiNb substrate, and the other method is in-situ mechanical bending. The former method succeeded in imposing 0.4% tensile strain to anatase TiO{sub 2} nanofilm, and strain narrowed the bandgap of TiO{sub 2} by 60 meV. The latter method enabled rutile TiO{sub 2} thin film under the 0.5% biaxially tensile-strained state, which contributes to a narrowed bandgap with ΔE{sub g} of 70 meV. Also, photocurrents of both strained TiO{sub 2} films increased by 1.5 times compared to the strain-free films, which indirectly verified the previous DFT prediction proposed by Thulin and Guerra in 2008 that tensile strain could improve the mobility and separation of photo-excite carriers.

Complete three-dimensional photonic bandgap in a simple cubic structure

International Nuclear Information System (INIS)

Lin, Shawn-Yu; Fleming, J. G.; Lin, Robin; Sigalas, M. M.; Biswas, R.; Ho, K. M.

2001-01-01

The creation of a three-dimensional (3D) photonic crystal with simple cubic (sc) symmetry is important for applications in the signal routing and 3D waveguiding of light. With a simple stacking scheme and advanced silicon processing, a 3D sc structure was constructed from a 6-in. silicon wafer. The sc structure is experimentally shown to have a complete 3D photonic bandgap in the infrared wavelength. The finite size effect is also observed, accounting for a larger absolute photonic bandgap

Device Modeling of the Performance of Cu(In,GaSe2 Solar Cells with V-Shaped Bandgap Profiles

Directory of Open Access Journals (Sweden)

Shou-Yi Kuo

2014-01-01

Full Text Available The effect of Cu(In,GaSe2 (CIGS with V-shaped bandgap on device performance is investigated in detail. A series of Ga/(In+Ga ratio are set to study the influence of V-shaped bandgap profile on the electricity of CIGS thin film solar cells. The modeling of device current density-voltage (J-V curve and bandgap grading profile corresponded well to measurement results. Detailed characteristic and modeling results show that an increased gradient of bandgap from valley to the buffer layer CdS will result in a barrier and lead to an enhanced recombination in the valley. This phenomenon can be modified by the back electric field resulting from a gradient bandgap from valley (bandgap minimum to the Mo back contact. These results indicate CIGS-based solar cells can achieve higher performance by optimizing the V-shaped bandgap profile.

Band engineering of amorphous silicon ruthenium thin film and its near-infrared absorption enhancement combined with nano-holes pattern on back surface of silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Guo, Anran; Zhong, Hao [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Li, Wei, E-mail: wli@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Gu, Deen; Jiang, Xiangdong [School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Jiang, Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2016-10-30

Highlights: • The increase of Ru concentration leads to a narrower bandgap of a-Si{sub 1-x}Ru{sub x} thin film. • The absorption coefficient of a-Si{sub 1-x}Ru{sub x} is higher than that of SiGe. • A double-layer absorber comprising of a-Si{sub 1-x}Ru{sub x} film and Si nano-holes layer is achieved. - Abstract: Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its bandgap limit. In this study, a narrow bandgap silicon rich semiconductor is achieved by introducing ruthenium (Ru) into amorphous silicon (a-Si) to form amorphous silicon ruthenium (a-Si{sub 1-x}Ru{sub x}) thin films through co-sputtering. The increase of Ru concentration leads to an enhancement of light absorption and a narrower bandgap. Meanwhile, a specific light trapping technique is employed to realize high absorption of a-Si{sub 1-x}Ru{sub x} thin film in a finite thickness to avoid unnecessary carrier recombination. A double-layer absorber comprising of a-Si{sub 1-x}Ru{sub x} thin film and silicon random nano-holes layer is formed on the back surface of silicon substrates, and significantly improves near-infrared absorption while the leaky light intensity is less than 5%. This novel absorber, combining narrow bandgap thin film with light trapping structure, may have a potential application in near-infrared photoelectronic devices.

Hydrogen in semiconductors II

CERN Document Server

Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

1999-01-01

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

Compact electrically controlled broadband liquid crystal photonic bandgap fiber polarizer

DEFF Research Database (Denmark)

Wei, Lei; Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard

2009-01-01

An electrically controlled liquid crystal photonic-bandgap fiber polarizer is experimentally demonstrated. A maximum 21.3dB electrically tunable polarization extinction ratio is achieved with 45° rotatable transmission axis as well as switched on and off in 1300nm–1600nm.......An electrically controlled liquid crystal photonic-bandgap fiber polarizer is experimentally demonstrated. A maximum 21.3dB electrically tunable polarization extinction ratio is achieved with 45° rotatable transmission axis as well as switched on and off in 1300nm–1600nm....

Study of the modifications induced in AlxGa1-xN semiconductors under swift heavy ion irradiation

International Nuclear Information System (INIS)

Moisy, Florent

2016-01-01

Nitride semiconductors are attractive materials for optoelectronic applications. They can be subjected to heavy ions in a wide range of energy during their elaboration (improvement of their properties by ionic implantation) or during their potential use in extreme environments (outer space). This thesis focuses on the study of AlxGa1-xN alloys under heavy ion irradiation from GANIL. In GaN, the formation of Ga vacancies has been highlighted, these latter coming from elastic collisions between atoms in the material and the projectiles. On the other hand, it is possible to observe the formation of disordered ion tracks for projectiles with high electronic stopping power (Se). These tracks induce strong surface modifications, a closing of the optical bandgap, but also an extension strain along the direction parallel to the ion direction and biaxial stresses of some GPa. Concerning AlxGa1-xN alloys with x from 0.3 to 1, the points defects are more complex, and a synergy between electronic excitations and nuclear collisions is responsible of their formation. Nevertheless, the increase of the Al molar fraction (x), tends to improve the resistance to ion tracks formation in these materials. (author) [fr

Vertical dielectric screening of few-layer van der Waals semiconductors.

Science.gov (United States)

Koo, Jahyun; Gao, Shiyuan; Lee, Hoonkyung; Yang, Li

2017-10-05

Vertical dielectric screening is a fundamental parameter of few-layer van der Waals two-dimensional (2D) semiconductors. However, unlike the widely-accepted wisdom claiming that the vertical dielectric screening is sensitive to the thickness, our first-principles calculation based on the linear response theory (within the weak field limit) reveals that this screening is independent of the thickness and, in fact, it is the same as the corresponding bulk value. This conclusion is verified in a wide range of 2D paraelectric semiconductors, covering narrow-gap ones and wide-gap ones with different crystal symmetries, providing an efficient and reliable way to calculate and predict static dielectric screening of reduced-dimensional materials. Employing this conclusion, we satisfactorily explain the tunable band gap in gated 2D semiconductors. We further propose to engineer the vertical dielectric screening by changing the interlayer distance via vertical pressure or hybrid structures. Our predicted vertical dielectric screening can substantially simplify the understanding of a wide range of measurements and it is crucial for designing 2D functional devices.

X-ray absorption spectroscopy of semiconductors

CERN Document Server

Ridgway, Mark

2015-01-01

X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-sit...

Production of CdTe Semiconductor Thin Films by Electrodeposition Technique for Solar Cell Applications

Directory of Open Access Journals (Sweden)

Ahmet PEKSÖZ

2016-08-01

Full Text Available Electro-deposited cadmium tellurite (CuTe thin film was grown onto ITO-coated glass substrate for 120 seconds at the room temperature and a constant cathodic potential of -0.85 V. Deposition solution was prepared from cadmium chloride (CdCl2, sodium tellurite (Na2TeO3 and pure water. The pH value of the deposition solution was adjusted to 2.0 by adding HCl. The EDX analysis shows that the film has 52% Cd and 48% Te elemental compositions. Film thickness was found to be 140 nm. The CdTe thin film exhibits p-type semiconductor character, and has an energy bandgap of 1.47 eV. 

A Polarization Maintaining Filter based on a Liquid-Crystal-Photonic-Bandgap-Fiber

DEFF Research Database (Denmark)

Scolari, Lara; Olausson, Christina Bjarnal Thulin; Turchinovich, Dmitry

2008-01-01

A polarization maintaining filter based on a liquid-crystal-photonic-bandgap-fiber is demonstrated. Its polarization extinction ratio is 14 dB at 1550 nm. Its tunability is 150 nm.......A polarization maintaining filter based on a liquid-crystal-photonic-bandgap-fiber is demonstrated. Its polarization extinction ratio is 14 dB at 1550 nm. Its tunability is 150 nm....

Physics of bandgap formation in Cu-Sb-Se based novel thermoelectrics: the role of Sb valency and Cu d levels.

Science.gov (United States)

Do, Dat; Ozolins, Vidvuds; Mahanti, S D; Lee, Mal-Soon; Zhang, Yongsheng; Wolverton, C

2012-10-17

In this paper we discuss the results of ab initio electronic structure calculations for Cu(3)SbSe(4) (Se4) and Cu(3)SbSe(3) (Se3), two narrow bandgap semiconductors of thermoelectric interest. We find that Sb is trivalent in both the compounds, in contrast to a simple nominal valence (ionic) picture which suggests that Sb should be 5 + in Se4. The gap formation in Se4 is quite subtle, with hybridization between Sb 5s and the neighboring Se 4s, 4p orbitals, position of Cu d states, and non-local exchange interaction, each playing significant roles. Thermopower calculations show that Se4 is a better p-type system. Our theoretical results for Se4 agree very well with recent experimental results obtained by Skoug et al (2011 Sci. Adv. Mater. 3 602).

Optimal design of tunable phononic bandgap plates under equibiaxial stretch

International Nuclear Information System (INIS)

Hedayatrasa, Saeid; Abhary, Kazem; Uddin, M S; Guest, James K

2016-01-01

Design and application of phononic crystal (PhCr) acoustic metamaterials has been a topic with tremendous growth of interest in the last decade due to their promising capabilities to manipulate acoustic and elastodynamic waves. Phononic controllability of waves through a particular PhCr is limited only to the spectrums located within its fixed bandgap frequency. Hence the ability to tune a PhCr is desired to add functionality over its variable bandgap frequency or for switchability. Deformation induced bandgap tunability of elastomeric PhCr solids and plates with prescribed topology have been studied by other researchers. Principally the internal stress state and distorted geometry of a deformed phononic crystal plate (PhP) changes its effective stiffness and leads to deformation induced tunability of resultant modal band structure. Thus the microstructural topology of a PhP can be altered so that specific tunability features are met through prescribed deformation. In the present study novel tunable PhPs of this kind with optimized bandgap efficiency-tunability of guided waves are computationally explored and evaluated. Low loss transmission of guided waves throughout thin walled structures makes them ideal for fabrication of low loss ultrasound devices and structural health monitoring purposes. Various tunability targets are defined to enhance or degrade complete bandgaps of plate waves through macroscopic tensile deformation. Elastomeric hyperelastic material is considered which enables recoverable micromechanical deformation under tuning finite stretch. Phononic tunability through stable deformation of phononic lattice is specifically required and so any topology showing buckling instability under assumed deformation is disregarded. Nondominated sorting genetic algorithm (GA) NSGA-II is adopted for evolutionary multiobjective topology optimization of hypothesized tunable PhP with square symmetric unit-cell and relevant topologies are analyzed through finite

Thermally controlled mid-IR band-gap engineering in all-glass chalcogenide microstructured fibers: a numerical study

DEFF Research Database (Denmark)

Barh, Ajanta; Varshney, Ravi K.; Pal, Bishnu P.

2017-01-01

Presence of photonic band-gap (PBG) in an all-glass low refractive index (RI) contrast chalcogenide (Ch) microstructured optical fibers (MOFs) is investigated numerically. The effect of external temperature on the position of band-gap is explored to realize potential fiber-based wavelength filters....... Then the temperature sensitivity of band-gaps is investigated to design fiber-based mid-IR wavelength filters/sensors....

Passive band-gap reconfiguration born from bifurcation asymmetry.

Science.gov (United States)

Bernard, Brian P; Mann, Brian P

2013-11-01

Current periodic structures are constrained to have fixed energy transmission behavior unless active control or component replacement is used to alter their wave propagation characteristics. The introduction of nonlinearity to generate multiple stable equilibria is an alternative strategy for realizing distinct energy propagation behaviors. We investigate the creation of a reconfigurable band-gap system by implementing passive switching between multiple stable states of equilibrium, to alter the level of energy attenuation in response to environmental stimuli. The ability to avoid potentially catastrophic loads is demonstrated by tailoring the bandpass and band-gap regions to coalesce for two stable equilibria and varying an external load parameter to trigger a bifurcation. The proposed phenomenon could be utilized in remote or autonomous applications where component modifications and active control are impractical.

Tuning the hybridization bandgap by meta-molecules with in-unit interaction

Energy Technology Data Exchange (ETDEWEB)

Chen, Yongqiang; Li, Yunhui, E-mail: liyunhui@tongji.edu.cn; Wu, Qian; Jiang, Haitao; Zhang, Yewen; Chen, Hong [Key Laboratory of Advanced Micro-Structured Materials, Ministry of Education, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

2015-09-07

In this paper, we demonstrate that the hybridization bandgap (HBG) can be tuned conveniently by deep subwavelength meta-molecules with in-unit interaction. Spontaneous-emission-cancellation-like (SEC-like) effect is realized in a meta-molecule by introducing the destructive interference of two detuned meta-atoms. The meta-atoms consisting of subwavelength zero-index-metamaterial-based resonators are side-coupled to a microstrip. Compared to conventional HBG configurations, the presence of in-unit interaction between meta-atoms provides more flexibility in tuning the bandgap properties, keeping the device volume almost unchanged. Both numerical simulations and microwave experiments confirm that the width, depth, and spectrum shape of HBG can be tuned by simply introducing SEC-like interaction into the meta-molecule. Due to these features, our design may be promising to be applied in microwave or optics communications systems with strict limitation of device volume and flexible bandgap properties.

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

Energy Technology Data Exchange (ETDEWEB)

Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Rekemeyer, Paul H.; Gradečak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2015-12-14

Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

Optimal design of lossy bandgap structures

DEFF Research Database (Denmark)

Jensen, Jakob Søndergaard

2004-01-01

The method of topology optimization is used to design structures for wave propagation with one lossy material component. Optimized designs for scalar elastic waves are presented for mininimum wave transmission as well as for maximum wave energy dissipation. The structures that are obtained...... are of the 1D or 2D bandgap type depending on the objective and the material parameters....

Thiazole-based organic semiconductors for organic electronics.

Science.gov (United States)

Lin, Yuze; Fan, Haijun; Li, Yongfang; Zhan, Xiaowei

2012-06-19

Over the past two decades, organic semiconductors have been the subject of intensive academic and commercial interests. Thiazole is a common electron-accepting heterocycle due to electron-withdrawing nitrogen of imine (C=N), several moieties based on thiazole have been widely introduced into organic semiconductors, and yielded high performance in organic electronic devices. This article reviews recent developments in the area of thiazole-based organic semiconductors, particularly thiazole, bithiazole, thiazolothiazole and benzobisthiazole-based small molecules and polymers, for applications in organic field-effect transistors, solar cells and light-emitting diodes. The remaining problems and challenges, and the key research direction in near future are discussed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Current simulation of symmetric contacts on CdTe

International Nuclear Information System (INIS)

Ruzin, A.

2011-01-01

This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

Current simulation of symmetric contacts on CdTe

Energy Technology Data Exchange (ETDEWEB)

Ruzin, A., E-mail: aruzin@post.tau.ac.il [School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel)

2011-12-01

This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

Emergence of an enslaved phononic bandgap in a non-equilibrium pseudo-crystal

Science.gov (United States)

Bachelard, Nicolas; Ropp, Chad; Dubois, Marc; Zhao, Rongkuo; Wang, Yuan; Zhang, Xiang

2017-08-01

Material systems that reside far from thermodynamic equilibrium have the potential to exhibit dynamic properties and behaviours resembling those of living organisms. Here we realize a non-equilibrium material characterized by a bandgap whose edge is enslaved to the wavelength of an external coherent drive. The structure dynamically self-assembles into an unconventional pseudo-crystal geometry that equally distributes momentum across elements. The emergent bandgap is bestowed with lifelike properties, such as the ability to self-heal to perturbations and adapt to sudden changes in the drive. We derive an exact analytical solution for both the spatial organization and the bandgap features, revealing the mechanism for enslavement. This work presents a framework for conceiving lifelike non-equilibrium materials and emphasizes the potential for the dynamic imprinting of material properties through external degrees of freedom.

Emergence of an enslaved phononic bandgap in a non-equilibrium pseudo-crystal.

Science.gov (United States)

Bachelard, Nicolas; Ropp, Chad; Dubois, Marc; Zhao, Rongkuo; Wang, Yuan; Zhang, Xiang

2017-08-01

Material systems that reside far from thermodynamic equilibrium have the potential to exhibit dynamic properties and behaviours resembling those of living organisms. Here we realize a non-equilibrium material characterized by a bandgap whose edge is enslaved to the wavelength of an external coherent drive. The structure dynamically self-assembles into an unconventional pseudo-crystal geometry that equally distributes momentum across elements. The emergent bandgap is bestowed with lifelike properties, such as the ability to self-heal to perturbations and adapt to sudden changes in the drive. We derive an exact analytical solution for both the spatial organization and the bandgap features, revealing the mechanism for enslavement. This work presents a framework for conceiving lifelike non-equilibrium materials and emphasizes the potential for the dynamic imprinting of material properties through external degrees of freedom.

Sensitive Mid-Infrared Detection in Wide-Bandgap Semiconductors Using Extreme Non-Degenerate Two-Photon Absorption

Science.gov (United States)

2011-08-07

is 20 pJ, whereas for MCT the minimum detectable energy is 200 pJ (for details of detector par- ameters, such as pre- amplifier and transimpedance ...contributions (Fig. 1). This is analogous to having a ‘noisy’ detector electronic amplifier ; however, this ‘noise’ is measurable and could in principle be...portion of the 780 nm light was used to pump an optical parametric generator/ amplifier (OPG/A, TOPAS-800, Light Conversion) to generate MIR pulses

Electrochromic devices based on wide band-gap nanocrystalline semiconductors functionalized with mononuclear charge transfer compounds

DEFF Research Database (Denmark)

Biancardo, M.; Argazzi, R.; Bignozzi, C.A.

2006-01-01

A series of ruthenium and iron mononuclear complexes were prepared and their spectroeletrochemical behavior characterized oil Optically Transparent Thin Layer Electrodes (OTTLE) and on Fluorine Doped SnO2 (FTO) conductive glasses coated with Sb-doped nanocrystalline SnO2. These systems display a ...

High-efficiency photovoltaic cells

Science.gov (United States)

Yang, H.T.; Zehr, S.W.

1982-06-21

High efficiency solar converters comprised of a two cell, non-lattice matched, monolithic stacked semiconductor configuration using optimum pairs of cells having bandgaps in the range 1.6 to 1.7 eV and 0.95 to 1.1 eV, and a method of fabrication thereof, are disclosed. The high band gap subcells are fabricated using metal organic chemical vapor deposition (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE) to produce the required AlGaAs layers of optimized composition, thickness and doping to produce high performance, heteroface homojunction devices. The low bandgap subcells are similarly fabricated from AlGa(As)Sb compositions by LPE, MBE or MOCVD. These subcells are then coupled to form a monolithic structure by an appropriate bonding technique which also forms the required transparent intercell ohmic contact (IOC) between the two subcells. Improved ohmic contacts to the high bandgap semiconductor structure can be formed by vacuum evaporating to suitable metal or semiconductor materials which react during laser annealing to form a low bandgap semiconductor which provides a low contact resistance structure.

Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy

International Nuclear Information System (INIS)

Sarmiento, Raymund; Cemine, Vernon Julius; Tagaca, Imee Rose; Salvador, Arnel; Mar Blanca, Carlo; Saloma, Caesar

2007-01-01

We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change.We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emittingp-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity

Stability and bandgaps of layered perovskites for one- and two-photon water splitting

DEFF Research Database (Denmark)

Castelli, Ivano Eligio; García Lastra, Juan Maria; Hüser, Falco

2013-01-01

in the Ruddlesden–Popper phase of the layered perovskite structure. Based on screening criteria for the stability, bandgaps and band edge positions, we suggest 20 new materials for the light harvesting photo-electrode of a one-photon water splitting device and 5 anode materials for a two-photon device with silicon...... as photo-cathode. In addition, we explore a simple rule relating the bandgap of the perovskite to the number of octahedra in the layered structure and the B-metal ion. Finally, the quality of the GLLB-SC potential used to obtain the bandgaps, including the derivative discontinuity, is validated against G0W......0@LDA gaps for 20 previously identified oxides and oxynitrides in the cubic perovskite structure....

Basic semiconductor physics

CERN Document Server

Hamaguchi, Chihiro

2017-01-01

This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

Emission Channeling Studies on the Behaviour of Light Alkali Atoms in Wide-Band-Gap Semiconductors

CERN Multimedia

Recknagel, E; Quintel, H

2002-01-01

% IS342 \\\\ \\\\ A major problem in the development of electronic devices based on diamond and wide-band-gap II-VI compound semiconductors, like ZnSe, is the extreme difficulty of either n- or p-type doping. The only reports of successful n-type doping of diamond involves ion implanted Li, which was found to be an intersititial donor. Recent theoretical calculations suggest that Na, P and N dopant atoms are also good candidates for n-type doping of diamond. No experimental evidence has been obtained up to now, mainly because of the complex and partly unresolved defect situation created during ion implantation, which is necessary to incorporate potential donor atoms into diamond. \\\\ \\\\In the case of ZnSe, considerable effort has been invested in trying to fabricate pn-junctions in order to make efficient, blue-light emitting diodes. However, it has proved to be very difficult to obtain p-type ZnSe, mainly because of electrical compensation related to background donor impurities. Li and Na are believed to be ampho...

Highly efficient luminescent solar concentrators based on earth-abundant indirect-bandgap silicon quantum dots

Science.gov (United States)

Meinardi, Francesco; Ehrenberg, Samantha; Dhamo, Lorena; Carulli, Francesco; Mauri, Michele; Bruni, Francesco; Simonutti, Roberto; Kortshagen, Uwe; Brovelli, Sergio

2017-02-01

Building-integrated photovoltaics is gaining consensus as a renewable energy technology for producing electricity at the point of use. Luminescent solar concentrators (LSCs) could extend architectural integration to the urban environment by realizing electrode-less photovoltaic windows. Crucial for large-area LSCs is the suppression of reabsorption losses, which requires emitters with negligible overlap between their absorption and emission spectra. Here, we demonstrate the use of indirect-bandgap semiconductor nanostructures such as highly emissive silicon quantum dots. Silicon is non-toxic, low-cost and ultra-earth-abundant, which avoids the limitations to the industrial scaling of quantum dots composed of low-abundance elements. Suppressed reabsorption and scattering losses lead to nearly ideal LSCs with an optical efficiency of η = 2.85%, matching state-of-the-art semi-transparent LSCs. Monte Carlo simulations indicate that optimized silicon quantum dot LSCs have a clear path to η > 5% for 1 m2 devices. We are finally able to realize flexible LSCs with performances comparable to those of flat concentrators, which opens the way to a new design freedom for building-integrated photovoltaics elements.

Semiconductor nanocrystals for novel optical applications

Science.gov (United States)

Moon, Jong-Sik

Inspired by the promise of enhanced spectral response, photorefractive polymeric composites photosensitized with semiconductor nanocrystals have emerged as an important class of materials. Here, we report on the photosensitization of photorefractive polymeric composites at visible wavelengths through the inclusion of narrow band-gap semiconductor nanocrystals composed of PbS. Through this approach, internal diffraction efficiencies in excess of 82%, two-beam-coupling gain coefficients in excess of 211 cm-1, and response times 34 ms have been observed, representing some of the best figures-of-merit reported on this class of materials. In addition to providing efficient photosensitization, however, extensive studies of these hybrid composites have indicated that the inclusion of nanocrystals also provides an enhancement in the charge-carrier mobility and subsequent reduction in the photorefractive response time. Through this approach with PbS as charge-carrier, unprecedented response times of 399 micros were observed, opening the door for video and other high-speed applications. It is further demonstrated that this improvement in response time occurs with little sacrifice in photorefractive efficiency and with internal diffraction efficiencies of 72% and two- beam-coupling gain coefficients of 500 cm-1 being measured. A thorough analysis of the experimental data is presented, supporting the hypothesized mechanism of the enhanced charge mobility without the accompaniment of superfluous traps. Finally, water soluble InP/ZnS and CdSe/ZnS quantum dots interacted with CPP and Herceptin to apply them as a bio-maker. Both of quantum dots showed the excellent potential for use in biomedical imaging and drug delivery applications. It is anticipated that these approaches can play a significant role in the eventual commercialization of these classes of materials.

Preparation and characterisation of light emitting porous semiconductors

International Nuclear Information System (INIS)

Harris, P.J.

1996-01-01

Semiconducting materials exhibit electrical conductivity in the region between that of metals and insulators. The electronic properties depend upon the particular element and the level of impurities contained within it. These materials are the basis of today's electronics industry with silicon being the most important element. It was believed until recently that efficient photoluminescence in the visible region was not possible from silicon due to its relatively small, indirect band-gap (1.12 eV). For this reason semiconductors with a larger, direct band-gap such as gallium arsenide have been used for optical devices. Photoluminescence from silicon has been observed in the infrared region but this was of little use to the opto-electronics industry. However, when silicon is in the form of small nano-structures, photoluminescence can be observed in the visible region from red to blue. This photoluminescence corresponds to a shift in the band gap to between 1.5 eV and 4.5 eV. This is in accordance with the predictions of quantum mechanics for structures of this scale. Nano-structures of silicon and of other semiconductors are relatively easy to produce. Electro-chemical etching is by far the most reliable method, resulting in uniform and reproducible structures. Anodic etching in a hydrofluoric acid based etch solution results in the silicon becoming porous to a depth of the order of microns. The lateral dimensions of these porous structures are in the range of a few nanometres resulting in an aspect ratio of the order of 1000:1. These materials studied in this work have been studied with the aid of EXAFS, scanning probe microscopy and Muon spectroscopy in order to determine the local structures. Measurements of the photoluminescence intensity have been taken at the synchrotron radiation facility, (Daresbury Laboratory). These results show that the observed photoluminescence is temperature dependent. The porous silicon samples studied for this work showed

Identification of deep trap energies and influences of oxygen plasma ashing on semiconductor carrier lifetime

International Nuclear Information System (INIS)

Koprowski, A; Humbel, O; Plappert, M; Krenn, H

2015-01-01

We have performed an analytical study of the effects of oxygen plasma ashing processes in semiconductor device fabrication and its impact on minority carrier lifetime in high voltage semiconductor devices. Our work includes a critical background study of life time killing mechanisms by deep traps imparted into the semiconductor by barrel plasma ashing. The Elymat technique provides the opportunity to measure lifetime and diffusion length of minority carriers and surface photo voltage (SPV) measurement was used to analyse influences of process parameters such as photoresist, time budget and positioning in the process chamber. It was shown that in microwave plasma processes the diffusion length changes severely with tempering at 200 °C, whereas RF-plasma processes show a significant process time-dependence. Batch tools in general suffer from a strong first wafer effect which could be correlated with the static electrical parameters of the semiconductor devices. The trap identities were detected by using deep level transient spectroscopy and the chemical species of the traps has been proven by inductive coupled plasma mass spectrometry. The deep-bandgap trap energies are reliable fingerprints of the chosen process parameters such as process time and of resist-influences. By microwave plasma processes intrinsic Fe and FeB-complex levels were identified and a good agreement with the SPV-measurement and electrical device characteristic was shown. RF-plasma processes impart levels attributed to Pt levels and an additional level, which could be identified as a trap level probably forming a complex of Pt and H. (paper)

Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

KAUST Repository

Labram, John G.

2015-02-13

Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2-24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current-voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2-7.

Green synthesis of water soluble semiconductor nanocrystals and their applications

Science.gov (United States)

Wang, Ying

well as high-throughput and simplicity of photolithography. Photoconductive LBL thin films are fabricated from Te nanowires. The thin film has distinctively metallic mirror-like appearance and displays strong photoconductance effect characteristic of narrow band-gap semiconductors. In-situ reduction of gold results in formation of Au nanoparticles adhering to Te nanowires, which leads to the disappearance of photoconductivity of the Te thin film. Those nanomaterials are considered for various applications, such as light emitting devices, data storage materials, biosensors, photodetectors.

A Wide-Range Tunable Level-Keeper Using Vertical Metal-Oxide-Semiconductor Field-Effect Transistors for Current-Reuse Systems

Science.gov (United States)

Tanoi, Satoru; Endoh, Tetsuo

2012-04-01

A wide-range tunable level-keeper using vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed for current-reuse analog systems. The design keys for widening tunable range of the operation are a two-path feed-back and a vertical MOSFET with back-bias-effect free. The proposed circuit with the vertical MOSFETs shows the 1.23-V tunable-range of the input level with the 2.4-V internal-supply voltage (VDD) in the simulation. This tunable-range of the proposed circuit is 4.7 times wider than that of the conventional. The achieved current efficiency of the proposed level-keeper is 66% at the 1.2-V output with the 2.4-V VDD. This efficiency of the proposed circuit is twice higher than that of the traditional voltage down converter.

High pressure semiconductor physics I

CERN Document Server

Willardson, R K; Paul, William; Suski, Tadeusz

1998-01-01

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

Identification of defects in semiconductors

CERN Document Server

Stavola, Michael; Weber, Eicke R; Stavola, Michael

1998-01-01

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this traditi...

Pressure-Induced Bandgap Optimization in Lead-Based Perovskites with Prolonged Carrier Lifetime and Ambient Retainability

Energy Technology Data Exchange (ETDEWEB)

Liu, Gang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Kong, Lingping [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Gong, Jue [Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb IL 60115 USA; Yang, Wenge [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Mao, Ho-kwang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Hu, Qingyang [Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Liu, Zhenxian [Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Schaller, Richard D. [Center for Nanoscale Materials, Argonne National Laboratory, Argonne IL 60439 USA; Zhang, Dongzhou [Hawai' i Institute of Geophysics and Planetology, School of Ocean and Earth Science and Technology, University of Hawai' i at Manoa, Honolulu HI 96822 USA; Xu, Tao [Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb IL 60115 USA

2016-12-05

Bond length and bond angle exhibited by valence electrons is essential to the core of chemistry. Using lead-based organic–inorganic perovskite compounds as an exploratory platform, it is demonstrated that the modulation of valence electrons by compression can lead to discovery of new properties of known compounds. Yet, despite its unprecedented progress, further efficiency boost of lead-based organic–inorganic perovskite solar cells is hampered by their wider bandgap than the optimum value according to the Shockley–Queisser limit. By modulating the valence electron wavefunction with modest hydraulic pressure up to 2.1 GPa, the optimized bandgap for single-junction solar cells in lead-based perovskites, for the first time, is achieved by narrowing the bandgap of formamidinium lead triiodide (HC(NH2)2PbI3) from 1.489 to 1.337 eV. Strikingly, such bandgap narrowing is partially retained after the release of pressure to ambient, and the bandgap narrowing is also accompanied with double-prolonged carrier lifetime. With First-principles simulation, this work opens a new dimension in basic chemical understanding of structural photonics and electronics and paves an alternative pathway toward better photovoltaic materials-by-design.

Pressure-Induced Bandgap Optimization in Lead-Based Perovskites with Prolonged Carrier Lifetime and Ambient Retainability

Energy Technology Data Exchange (ETDEWEB)

Liu, Gang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Kong, Lingping [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Gong, Jue [Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb IL 60115 USA; Yang, Wenge [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Mao, Ho-kwang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 China; Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Hu, Qingyang [Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Liu, Zhenxian [Geophysical Laboratory, Carnegie Institution of Washington, Washington DC 20015 USA; Schaller, Richard D. [Center for Nanoscale Materials, Argonne National Laboratory, Argonne IL 60439 USA; Zhang, Dongzhou [Hawai' i Institute of Geophysics and Planetology, School of Ocean and Earth Science and Technology, University of Hawai' i at Manoa, Honolulu HI 96822 USA; Xu, Tao [Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb IL 60115 USA

2016-12-05

Bond length and bond angle exhibited by valence electrons is essential to the core of chemistry. Using lead-based organic–inorganic perovskite compounds as an exploratory platform, it is demonstrated that the modulation of valence electrons by compression can lead to discovery of new properties of known compounds. Yet, despite its unprecedented progress, further efficiency boost of lead-based organic–inorganic perovskite solar cells is hampered by their wider bandgap than the optimum value according to the Shockley–Queisser limit. By modulating the valence electron wavefunction with modest hydraulic pressure up to 2.1 GPa, the optimized bandgap for single-junction solar cells in lead-based perovskites, for the first time, is achieved by narrowing the bandgap of formamidinium lead triiodide (HC(NH₂)₂PbI₃) from 1.489 to 1.337 eV. Strikingly, such bandgap narrowing is partially retained after the release of pressure to ambient, and the bandgap narrowing is also accompanied with double-prolonged carrier lifetime. With First-principles simulation, this work opens a new dimension in basic chemical understanding of structural photonics and electronics and paves an alternative pathway toward better photovoltaic materials-by-design.

Single-particle spectroscopy of I-III-VI semiconductor nanocrystals: spectral diffusion and suppression of blinking by two-color excitation.

Science.gov (United States)

Sharma, Dharmendar Kumar; Hirata, Shuzo; Bujak, Lukasz; Biju, Vasudevanpillai; Kameyama, Tatsuya; Kishi, Marino; Torimoto, Tsukasa; Vacha, Martin

2016-07-14

Ternary I-III-VI semiconductor nanocrystals have been explored as non-toxic alternatives to II-VI semiconductors for optoelectronic and sensing applications, but large photoluminescence spectral width and moderate brightness restrict their practical use. Here, using single-particle photoluminescence spectroscopy on nanocrystals of (AgIn)xZn2(1-x)S2 we show that the photoluminescence band is inhomogeneously broadened and that size distribution is the dominant factor in the broadening. The residual homogeneous linewidth of individual nanocrystals reaches up to 75% of the ensemble spectral width. Single nanocrystals undergo spectral diffusion which also contributes to the inhomogeneous band. Excitation with two lasers with energies above and below the bandgap reveals coexistence of two emitting donor states within one particle. Spectral diffusion in such particles is due to temporal activation and deactivation of one such state. Filling of a trap state with a lower-energy laser enables optical modulation of photoluminescence intermittency (blinking) and leads to an almost two-fold increase in brightness.

An electron beam induced current study of gallium nitride and diamond materials

International Nuclear Information System (INIS)

Cropper, A.D.; Moore, D.J.; Scott, C.S.; Green, R.

1995-01-01

The continual need for microelectronic devices that operate under severe electronic and environmental conditions (high temperature, high frequency, high power, and radiation tolerance) has sustained research in wide bandgap semiconductor materials. The properties suggest these wide-bandgap semiconductor materials have tremendous potential for military and commercial applications. High frequency bipolar transistors and field effect transistors, diodes, and short wavelength optical devices have been proposed using these materials. Although research efforts involving the study of transport properties in Gallium Nitride (GaN) and Diamond have made significant advances, much work is still needed to improve the material quality so that the electrophysical behavior of device structures can be further understood and exploited. Electron beam induced current (EBIC) measurements can provide a method of understanding the transport properties in Gallium Nitride (GaN) and Diamond. This technique basically consists of measuring the current or voltage transient response to the drift and diffusion of carriers created by a short-duration pulse of radiation. This method differs from other experimental techniques because it is based on a fast transient electron beam probe created from a high speed, laser pulsed photoemission system

Thermal diffusion boron doping of single-crystal natural diamond

Energy Technology Data Exchange (ETDEWEB)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2016-05-28

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Thermal diffusion boron doping of single-crystal natural diamond

International Nuclear Information System (INIS)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

2016-01-01

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Bandgap tunability at single-layer molybdenum disulphide grain boundaries

KAUST Repository

Huang, Yu Li; Chen, Yifeng; Zhang, Wenjing; Quek, Su Ying; Chen, Chang-Hsiao; Li, Lain-Jong; Hsu, Wei-Ting; Chang, Wen-Hao; Zheng, Yu Jie; Chen, Wei; Wee, Andrew T. S.

2015-01-01

represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle

Effects of corrugation shape on frequency band-gaps for longitudinal wave motion in a periodic elastic layer

DEFF Research Database (Denmark)

Sorokin, Vladislav

2016-01-01

The paper concerns determining frequency band-gaps for longitudinal wave motion in a periodic waveguide. The waveguide may be considered either as an elastic layer with variable thickness or as a rod with variable cross section. As a result, widths and locations of all frequency band-gaps are det......The paper concerns determining frequency band-gaps for longitudinal wave motion in a periodic waveguide. The waveguide may be considered either as an elastic layer with variable thickness or as a rod with variable cross section. As a result, widths and locations of all frequency band......, harmonic in the corrugation series. The revealed insights into the mechanism of band-gap formation can be used to predict locations and widths of all frequency band-gaps featured by any corrugation shape. These insights are general and can be valid also for other types of wave motion in periodic structures...

Solid state semiconductor detectorized survey meter

International Nuclear Information System (INIS)

Okamoto, Eisuke; Nagase, Yoshiyuki; Furuhashi, Masato

1987-01-01

Survey meters are used for measurement of gamma ray dose rate of the space and the surface contamination dencity that the atomic energy plant and the radiation facility etc. We have recently developed semiconductor type survey meter (Commercial name: Compact Survey Meter). This survey meter is a small-sized dose rate meter with excellent function. The special features are using semiconductor type detector which we have developed by our own technique, stablar wide range than the old type, long life, and easy to carry. Now we introduce the efficiency and the function of the survey meter. (author)

Ionic exchange of Hf donor impurities in the wide-gap semiconductor Tm{sub 2}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Munoz, E.L.; Darriba, G.N. [Departamento de Fisica-IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, C.C. 67, 1900 La Plata (Argentina); Bibiloni, A.G. [Departamento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, C.C. 67, 1900 La Plata (Argentina); Errico, L.A. [Departamento de Fisica-IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, C.C. 67, 1900 La Plata (Argentina); Universidad Nacional del Noroeste Bonaerense (UNNOBA), Monteagudo 2772, 2700 Pergamino, Buenos Aires (Argentina); Renteria, M., E-mail: renteria@fisica.unlp.edu.a [Departamento de Fisica-IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, C.C. 67, 1900 La Plata (Argentina)

2010-04-16

The ionic exchange of Hf donor impurities in substitutional cationic sites of the cubic (bixbyite) phase of the wide-gap semiconductor Tm{sub 2}O{sub 3} was studied. The doping process was performed by ball-milling-assisted solid-state reaction of Tm{sub 2}O{sub 3} and neutron-activated m-HfO{sub 2}. {sup 181}Ta atoms, obtained by the {beta}-decay of the {sup 181}Hf-isotope, were used as probes in time-differential perturbed-angular-correlation (TDPAC) experiments carried out after each step of the doping process. The measured hyperfine interactions at {sup 181}Ta sites enabled the electric-field gradient (EFG) characterization at representative Hf impurity sites of each step of the process. The efficiency and substitutional character of the exchange process is discussed and elucidated in the framework of an empirical EFG systematic established in isostructural rare-earth bixbyite sesquioxides.

Two-dimensional Kagome photonic bandgap waveguide

DEFF Research Database (Denmark)

Nielsen, Jens Bo; Søndergaard, Thomas; Libori, Stig E. Barkou

2000-01-01

The transverse-magnetic photonic-bandgap-guidance properties are investigated for a planar two-dimensional (2-D) Kagome waveguide configuration using a full-vectorial plane-wave-expansion method. Single-moded well-localized low-index guided modes are found. The localization of the optical modes...... is investigated with respect to the width of the 2-D Kagome waveguide, and the number of modes existing for specific frequencies and waveguide widths is mapped out....

Ag-based semiconductor photocatalysts in environmental purification

Energy Technology Data Exchange (ETDEWEB)

Li, Jiade; Fang, Wen [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Yu, Changlin, E-mail: yuchanglinjx@163.com [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); School of Environment Engineering and biology Engineering, Guangdong University of Petrochemical Technology, Maoming, 525000 Guangdong Province (China); Zhou, Wanqin [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, 350002 (China); Zhu, Lihua [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Xie, Yu, E-mail: xieyu_121@163.com [College of Environment and Chemical Engineering, Nanchang Hangkong University, Nanchang 330063, Jiangxi (China)

2015-12-15

Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO{sub 2}, ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

Ag-based semiconductor photocatalysts in environmental purification

International Nuclear Information System (INIS)

Li, Jiade; Fang, Wen; Yu, Changlin; Zhou, Wanqin; Zhu, Lihua; Xie, Yu

2015-01-01

Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO 2 , ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

Structure and optical bandgap relationship of π-conjugated systems.

Directory of Open Access Journals (Sweden)

André Leitão Botelho

Full Text Available In bulk heterojunction photovoltaic systems both the open-circuit voltage as well as the short-circuit current, and hence the power conversion efficiency, are dependent on the optical bandgap of the electron-donor material. While first-principles methods are computationally intensive, simpler model Hamiltonian approaches typically suffer from one or more flaws: inability to optimize the geometries for their own input; absence of general, transferable parameters; and poor performance for non-planar systems. We introduce a set of new and revised parameters for the adapted Su-Schrieffer-Heeger (aSSH Hamiltonian, which is capable of optimizing geometries, along with rules for applying them to any [Formula: see text]-conjugated system containing C, N, O, or S, including non-planar systems. The predicted optical bandgaps show excellent agreement to UV-vis spectroscopy data points from literature, with a coefficient of determination [Formula: see text], a mean error of -0.05 eV, and a mean absolute deviation of 0.16 eV. We use the model to gain insights from PEDOT, fused thiophene polymers, poly-isothianaphthene, copolymers, and pentacene as sources of design rules in the search for low bandgap materials. Using the model as an in-silico design tool, a copolymer of benzodithiophenes along with a small-molecule derivative of pentacene are proposed as optimal donor materials for organic photovoltaics.

Monolithic all-PM femtosecond Yb-doped fiber laser using photonic bandgap fibers

DEFF Research Database (Denmark)

Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

2009-01-01

We present a monolithic Yb fiber laser, dispersion managed by an all-solid photonic bandgap fiber, and pulse compressed in a hollow-core photonic crystal fiber. The laser delivers 9 nJ, 275-fs long pulses at 1035 nm.......We present a monolithic Yb fiber laser, dispersion managed by an all-solid photonic bandgap fiber, and pulse compressed in a hollow-core photonic crystal fiber. The laser delivers 9 nJ, 275-fs long pulses at 1035 nm....

First principle analyses of direct bandgap solar cells with absorbing substrates versus mirrors

Energy Technology Data Exchange (ETDEWEB)

Kirk, Alexander P. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Kirk, Wiley P. [Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019 (United States)

2013-11-07

Direct bandgap InP, GaAs, CdTe, and Ga{sub 0.5}In{sub 0.5}P solar cells containing backside mirrors as well as parasitically absorbing substrates are analyzed for their limiting open circuit voltage and power conversion efficiency with comparison to record solar cells. From the principle of detailed balance, it is shown quantitatively that mirror solar cells have greater voltage and power conversion efficiency than their substrate counterparts. Next, the radiative recombination coefficient and maximum radiative lifetime of GaAs mirror and substrate solar cells are calculated and compared to the nonradiative Auger and Shockley-Read-Hall (SRH) lifetimes. Mirror solar cells have greater radiative lifetime than their substrate variants. Auger lifetime exceeds radiative lifetime for both substrate and mirror cells while SRH lifetime may be less or greater than radiative lifetime depending on trap concentration and capture cross section. Finally, the change in free energy of the photogenerated carriers is analyzed in a comparison between InP, GaAs, CdTe, and Ga{sub 0.5}In{sub 0.5}P mirror and substrate solar cells in order to characterize the relationship between solar photon quality and free energy management in solar cells with differing bandgaps. Wider bandgap visible threshold Ga{sub 0.5}In{sub 0.5}P solar cells make better use of the available change in free energy of the photogenerated charge carriers, even when normalized to the bandgap energy, than narrower bandgap near-IR threshold InP, GaAs, and CdTe solar cells.

Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

Science.gov (United States)

Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

2015-05-26

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

Single frequency semiconductor lasers

CERN Document Server

Fang, Zujie; Chen, Gaoting; Qu, Ronghui

2017-01-01

This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

Design of photonic bandgap fibers by topology optimization

DEFF Research Database (Denmark)

Dühring, Maria Bayard; Sigmund, Ole; Feurer, Thomas

2010-01-01

A method based on topology optimization is presented to design the cross section of hollow-core photonic bandgap fibers for minimizing energy loss by material absorption. The optical problem is modeled by the timeharmonic wave equation and solved with the finite element program Comsol Multiphysics...

Bandgap tuning with thermal residual stresses induced in a quantum dot.

Science.gov (United States)

Kong, Eui-Hyun; Joo, Soo-Hyun; Park, Hyun-Jin; Song, Seungwoo; Chang, Yong-June; Kim, Hyoung Seop; Jang, Hyun Myung

2014-09-24

Lattice distortion induced by residual stresses can alter electronic and mechanical properties of materials significantly. Herein, a novel way of the bandgap tuning in a quantum dot (QD) by lattice distortion is presented using 4-nm-sized CdS QDs grown on a TiO2 particle as an application example. The bandgap tuning (from 2.74 eV to 2.49 eV) of a CdS QD is achieved by suitably adjusting the degree of lattice distortion in a QD via the tensile residual stresses which arise from the difference in thermal expansion coefficients between CdS and TiO2. The idea of bandgap tuning is then applied to QD-sensitized solar cells, achieving ≈60% increase in the power conversion efficiency by controlling the degree of thermal residual stress. Since the present methodology is not limited to a specific QD system, it will potentially pave a way to unexplored quantum effects in various QD-based applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Relation between bandgap and resistance drift in amorphous phase change materials.

Science.gov (United States)

Rütten, Martin; Kaes, Matthias; Albert, Andreas; Wuttig, Matthias; Salinga, Martin

2015-12-01

Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal evolution of infrared spectra measured on amorphous thin films of the three phase change materials Ag4In3Sb67Te26, GeTe and the most popular Ge2Sb2Te5. A widening of the bandgap upon annealing accompanied by a decrease of the optical dielectric constant ε∞ is observed for all three materials. Quantitative comparison with experimental data for the apparent activation energy of conduction reveals that the temporal evolution of bandgap and activation energy can be decoupled. The case of Ag4In3Sb67Te26, where the increase of activation energy is significantly smaller than the bandgap widening, demonstrates the possibility to identify new phase change materials with reduced resistance drift.

An Unusual Strong Visible-Light Absorption Band in Red Anatase TiO2 Photocatalyst Induced by Atomic Hydrogen-Occupied Oxygen Vacancies.

Science.gov (United States)

Yang, Yongqiang; Yin, Li-Chang; Gong, Yue; Niu, Ping; Wang, Jian-Qiang; Gu, Lin; Chen, Xingqiu; Liu, Gang; Wang, Lianzhou; Cheng, Hui-Ming

2018-02-01

Increasing visible light absorption of classic wide-bandgap photocatalysts like TiO 2 has long been pursued in order to promote solar energy conversion. Modulating the composition and/or stoichiometry of these photocatalysts is essential to narrow their bandgap for a strong visible-light absorption band. However, the bands obtained so far normally suffer from a low absorbance and/or narrow range. Herein, in contrast to the common tail-like absorption band in hydrogen-free oxygen-deficient TiO 2 , an unusual strong absorption band spanning the full spectrum of visible light is achieved in anatase TiO 2 by intentionally introducing atomic hydrogen-mediated oxygen vacancies. Combining experimental characterizations with theoretical calculations reveals the excitation of a new subvalence band associated with atomic hydrogen filled oxygen vacancies as the origin of such band, which subsequently leads to active photo-electrochemical water oxidation under visible light. These findings could provide a powerful way of tailoring wide-bandgap semiconductors to fully capture solar light. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

SiC Power MOSFET with Improved Gate Dielectric

Energy Technology Data Exchange (ETDEWEB)

Sbrockey, Nick M. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Spencer, Michael G. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Chandrashekhar, Chandra M.V. S. [Structured Materials Industries, Inc., Piscataway, NJ (United States)

2010-08-23

In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

Optical Biosensors Based on Semiconductor Nanostructures

Directory of Open Access Journals (Sweden)

Raúl J. Martín-Palma

2009-06-01

Full Text Available The increasing availability of semiconductor-based nanostructures with novel and unique properties has sparked widespread interest in their use in the field of biosensing. The precise control over the size, shape and composition of these nanostructures leads to the accurate control of their physico-chemical properties and overall behavior. Furthermore, modifications can be made to the nanostructures to better suit their integration with biological systems, leading to such interesting properties as enhanced aqueous solubility, biocompatibility or bio-recognition. In the present work, the most significant applications of semiconductor nanostructures in the field of optical biosensing will be reviewed. In particular, the use of quantum dots as fluorescent bioprobes, which is the most widely used application, will be discussed. In addition, the use of some other nanometric structures in the field of biosensing, including porous semiconductors and photonic crystals, will be presented.

Design for maximum band-gaps in beam structures

DEFF Research Database (Denmark)

Olhoff, Niels; Niu, Bin; Cheng, Gengdong

2012-01-01

This paper aims to extend earlier optimum design results for transversely vibrating Bernoulli-Euler beams by determining new optimum band-gap beam structures for (i) different combinations of classical boundary conditions, (ii) much larger values of the orders n and n-1 of adjacent upper and lower...

Quasiperiodic one-dimensional photonic crystals with adjustable multiple photonic bandgaps.

Science.gov (United States)

Vyunishev, Andrey M; Pankin, Pavel S; Svyakhovskiy, Sergey E; Timofeev, Ivan V; Vetrov, Stepan Ya

2017-09-15

We propose an elegant approach to produce photonic bandgap (PBG) structures with multiple photonic bandgaps by constructing quasiperiodic photonic crystals (QPPCs) composed of a superposition of photonic lattices with different periods. Generally, QPPC structures exhibit both aperiodicity and multiple PBGs due to their long-range order. They are described by a simple analytical expression, instead of quasiperiodic tiling approaches based on substitution rules. Here we describe the optical properties of QPPCs exhibiting two PBGs that can be tuned independently. PBG interband spacing and its depth can be varied by choosing appropriate reciprocal lattice vectors and their amplitudes. These effects are confirmed by the proof-of-concept measurements made for the porous silicon-based QPPC of the appropriate design.

Technology of substrates for molecular beam homo epitaxy of wide - gap AII-BVI semiconductors and construction of a simplified setup for this process

International Nuclear Information System (INIS)

Mycielski, A.; Szadkowski, A.; Kaliszek, W.

2000-01-01

The technology of 'epi-ready' substrate plates (for MBE) of the wide gap AII-BVI semiconductor compounds, i. e. - preparation of the ultra pure elements, synthesis of the source material, crystallization by the physical vapour transport technique, cutting of the oriented plates, mechano-chemical polishing and preparation of the 'epi-ready' surface - is described, as well as the construction of a simplified version of the MBE setup for covering the substrate plates with the homoepitaxial layer. The results of the characterization of the substrate crystals and plates are presented. (author)

Piezo activated mode tracking system for widely tunable mode-hop-free external cavity mid-IR semiconductor lasers

Science.gov (United States)

Wysocki, Gerard (Inventor); Tittel, Frank K. (Inventor); Curl, Robert F. (Inventor)

2010-01-01

A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

Direct bandgap silicon: tensile-strained silicon nanocrystals

Czech Academy of Sciences Publication Activity Database

Kůsová, Kateřina; Hapala, Prokop; Valenta, J.; Jelínek, Pavel; Cibulka, Ondřej; Ondič, Lukáš; Pelant, Ivan

2014-01-01

Roč. 1, č. 2 (2014), "1300042-1"-"1300042-9" ISSN 2196-7350 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GPP204/12/P235; GA ČR GAP204/10/0952 Institutional support: RVO:68378271 Keywords : silicon nanocrystals * badstructure * light emission * direct bandgap * surface capping Subject RIV: BM - Solid Matter Physics ; Magnetism

Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

Science.gov (United States)

Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

2016-01-01

In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1-xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1-xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm-3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports.

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

NARCIS (Netherlands)

2010-01-01

The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

Complete low-frequency bandgap in a two-dimensional phononic crystal with spindle-shaped inclusions

Science.gov (United States)

Ting, Wang; Hui, Wang; Mei-Ping, Sheng; Qing-Hua, Qin

2016-04-01

A two-dimensional phononic crystal (PC) structure possessing a relatively low frequency range of complete bandgap is presented. The structure is composed of periodic spindle-shaped plumbum inclusions in a rubber matrix which forms a square lattice. The dispersion relation, transmission spectrum and displacement field are studied using the finite element method in conjunction with the Bloch theorem. Numerical results show that the present PC structure can achieve a large complete bandgap in a relatively low frequency range compared with two inclusions of different materials, which is useful in low-frequency noise and vibration control and can be designed as a low frequency acoustic filter and waveguides. Moreover, the transmission spectrum and effective mass are evaluated to validate the obtained band structure. It is interesting to see that within the band gap the effective mass becomes negative, resulting in an imaginary wave speed and wave exponential attenuation. Finally, sensitivity analysis of the effect of geometrical parameters of the presented PC structure on the lowest bandgap is performed to investigate the variations of the bandgap width and frequency. Project supported by the China Scholarship Council.

Optical conductivity calculation of a k.p model semiconductor GaAs incorporating first-order electron-hole vertex correction

Science.gov (United States)

Nurhuda, Maryam; Aziz Majidi, Muhammad

2018-04-01

The role of excitons in semiconducting materials carries potential applications. Experimental results show that excitonic signals also appear in optical absorption spectra of semiconductor system with narrow gap, such as Gallium Arsenide (GaAs). While on the theoretical side, calculation of optical spectra based purely on Density Functional Theory (DFT) without taking electron-hole (e-h) interactions into account does not lead to the appearance of any excitonic signal. Meanwhile, existing DFT-based algorithms that include a full vertex correction through Bethe-Salpeter equation may reveal an excitonic signal, but the algorithm has not provided a way to analyze the excitonic signal further. Motivated to provide a way to isolate the excitonic effect in the optical response theoretically, we develop a method of calculation for the optical conductivity of a narrow band-gap semiconductor GaAs within the 8-band k.p model that includes electron-hole interactions through first-order electron-hole vertex correction. Our calculation confirms that the first-order e-h vertex correction reveals excitonic signal around 1.5 eV (the band gap edge), consistent with the experimental data.

Overcoming the Cut-Off Charge Transfer Bandgaps at the PbS Quantum Dot Interface

KAUST Repository

El-Ballouli, Ala'a O.

2015-11-17

Light harvesting from large size of semiconductor PbS quantum dots (QDs) with a bandgap of less than 1 eV is one of the greatest challenges precluding the development of PbS QD-based solar cells because the interfacial charge transfer (CT) from such QDs to the most commonly used electron acceptor materials is very inefficient, if it occurs at all. Thus, an alternative electron-accepting unit with a new driving force for CT is urgently needed to harvest the light from large-sized PbS QDs. Here, a cationic porphyrin is utilized as a new electron acceptor unit with unique features that bring the donor–acceptor components into close molecular proximity, allowing ultrafast and efficient electron transfer for QDs of all sizes, as inferred from the drastic photoluminescence quenching and the ultrafast formation of the porphyrin anionic species. The time-resolved results clearly demonstrate the possibility of modulating the electron transfer process between PbS QDs and porphyrin moieties not only by the size quantization effect but also by the interfacial electrostatic interaction between the positively charged porphyrin and the negatively charged QDs. This approach provides a new pathway for engineering QD-based solar cells that make the best use of the diverse photons making up the Sun\\'s broad irradiance spectrum.

Overcoming the Cut-Off Charge Transfer Bandgaps at the PbS Quantum Dot Interface

KAUST Repository

El-Ballouli, Ala'a O.; Alarousu, Erkki; Kirmani, Ahmad R.; Amassian, Aram; Bakr, Osman; Mohammed, Omar F.

2015-01-01

Light harvesting from large size of semiconductor PbS quantum dots (QDs) with a bandgap of less than 1 eV is one of the greatest challenges precluding the development of PbS QD-based solar cells because the interfacial charge transfer (CT) from such QDs to the most commonly used electron acceptor materials is very inefficient, if it occurs at all. Thus, an alternative electron-accepting unit with a new driving force for CT is urgently needed to harvest the light from large-sized PbS QDs. Here, a cationic porphyrin is utilized as a new electron acceptor unit with unique features that bring the donor–acceptor components into close molecular proximity, allowing ultrafast and efficient electron transfer for QDs of all sizes, as inferred from the drastic photoluminescence quenching and the ultrafast formation of the porphyrin anionic species. The time-resolved results clearly demonstrate the possibility of modulating the electron transfer process between PbS QDs and porphyrin moieties not only by the size quantization effect but also by the interfacial electrostatic interaction between the positively charged porphyrin and the negatively charged QDs. This approach provides a new pathway for engineering QD-based solar cells that make the best use of the diverse photons making up the Sun's broad irradiance spectrum.

Systematic design of phononic band-gap materials and structures by topology optimization

DEFF Research Database (Denmark)

Sigmund, Ole; Jensen, Jakob Søndergaard

2003-01-01

Phononic band-gap materials prevent elastic waves in certain frequency ranges from propagating, and they may therefore be used to generate frequency filters, as beam splitters, as sound or vibration protection devices, or as waveguides. In this work we show how topology optimization can be used...... to design and optimize periodic materials and structures exhibiting phononic band gaps. Firstly, we optimize infinitely periodic band-gap materials by maximizing the relative size of the band gaps. Then, finite structures subjected to periodic loading are optimized in order to either minimize the structural...

Graded band-gap engineering for increased efficiency in CZTS solar cells

Science.gov (United States)

Ferhati, H.; Djeffal, F.

2018-02-01

In this paper, we propose a potential high efficiency Cu2ZnSn(S,Se)4/CdS (CZTS) solar cell design based on graded band-gap engineering that can offer the benefits of improved absorption behavior and reduced recombination effects. Moreover, a new hybrid approach based on analytical modeling and Particle Swarm Optimization (PSO) is proposed to determinate the optimal band-gap profile of the amended CZTS absorber layer to achieve further efficiency enhancement. It is found that the proposed design exhibits superior performance, where a high efficiency of 16.9% is recorded for the optimized solar cell with a relative improvement of 92%, compared with the reference cell efficiency of 8.8%. Likewise, the optimized CZTS solar cell with a graded band-gap enables achieving a higher open circuit voltage of 889 mV, a short-circuit current of 28.5 mA and a fill factor of 66%. Therefore, the optimized CZTS-based solar cell with graded-band gap paradigm pinpoints a new path toward recording high-efficiency thin-film solar cells through enhancing carrier collection and reducing the recombination rate.

Structure and magnetism of transition-metal implanted dilute magnetic semiconductors

CERN Document Server

Pereira, Lino; Temst, K; Araújo, JP; Wahl, U

The discovery of a dilute magnetic semiconductor (DMS) in which ferromagnetism is carrier-mediated and persists above room temperature is a critical step towards the development of semiconductor-based spintronics. Among the many types of DMS materials which have been investigated, the current research interest can be narrowed down to two main classes of materials: (1) narrow-gap III-V semiconductors, mostly GaAs and InAs, doped with Mn; (2) wide-gap oxides and nitrides doped with 3d transition metals, mostly Mn- and Co-doped ZnO and Mn-doped GaN. With a number of interesting functionalities deriving from the carrier-mediated ferromagnetism and demonstrated in various proof-of-concept devices, Mn-doped GaAs has become, among DMS materials, one of the best candidates for technological application. However, despite major developments over the last 15 years, the maximum Curie temperature (185 K) remains well below room temperature. On the other hand, wide-gap DMS materials appear to exhibit ferromagnetic behavior...

Temperature-modified photonic bandgap in colloidal photonic crystals fabricated by vinyl functionalized silica spheres

International Nuclear Information System (INIS)

Deng Tiansong; Zhang Junyan; Zhu Kongtao; Zhang Qifeng; Wu Jinlei

2011-01-01

Graphical abstract: A thermal annealing procedure was described for fine modifying the photonic bandgap properties of colloidal photonic crystals, which were self-assembled from vinyl-functionalized silica spheres by a gravity sedimentation process. Highlights: → We described a thermal annealing procedure for fine modifying the photonic bandgap properties of colloidal photonic crystals. → The position of its stop band had more than 25% blue shift by annealing the sample from 60 to 600 deg. C. → The annealing temperature and the Bragg peak values have a linear relationship in the 120-440 deg. C range. → The effects provide a simple and controllable method for modifying the photonic bandgap properties of colloidal photonic crystals. - Abstract: A thermal annealing procedure for fine modifying the photonic bandgap properties of colloidal photonic crystals was described. The colloidal photonic crystals were assembled from monodisperse vinyl functionalized silica spheres by a gravity sedimentation process. The samples diffract light following Bragg's law combined with Snell's law. By annealing the sample at temperatures in the range of 60-600 deg. C, the position of its stop band shifted from 943 to 706 nm. It had more than 25% blue shift. In addition, the annealing temperature and the Bragg peak values have a linear relationship in the 120-440 deg. C range. Fourier transform infrared (FT-IR) spectra and thermo-gravimetric analysis (TGA) curves of vinyl functionalized silica spheres confirmed the above results. The effects provide a simple and controllable method for modifying the photonic bandgap properties of colloidal photonic crystals.

Semi-transparent polymer solar cells with excellent sub-bandgap transmission for third generation photovoltaics

KAUST Repository

Beiley, Zach M.

2013-10-07

Semi-transparent organic photovoltaics are of interest for a variety of photovoltaic applications, including solar windows and hybrid tandem photovoltaics. The figure shows a photograph of our semi-transparent solar cell, which has a power conversion efficiency of 5.0%, with an above bandgap transmission of 34% and a sub-bandgap transmission of 81%. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated Circuits

Science.gov (United States)

Cui, Xiao; Zhang, Can; Liang, Song; Zhu, Hong-Liang; Hou, Lian-Ping

2014-04-01

Impurity-free intermixing of InGaAsP multiple quantum wells (MQW) using sputtering Cu/SiO2 layers followed by rapid thermal processing (RTP) is demonstrated. The bandgap energy could be modulated by varying the sputtering power and time of Cu, RTP temperature and time to satisfy the demands for lasers, modulators, photodetector, and passive waveguides for the photonic integrated circuits with a simple procedure. The blueshift of the bandgap wavelength of MQW is experimentally investigated on different sputtering and annealing conditions. It is obvious that the introduction of the Cu layer could increase the blueshift more greatly than the common impurity free vacancy disordering technique. A maximum bandgap blueshift of 172 nm is realized with an annealing condition of 750°C and 200s. The improved technique is promising for the fabrication of the active/passive optoelectronic components on a single wafer with simple process and low cost.

Effects of Ge- and Sb-doping and annealing on the tunable bandgaps of SnS films

Energy Technology Data Exchange (ETDEWEB)

Hsu, Hsuan-Tai; Chiang, Ming-Hung; Huang, Chen-Hao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Lin, Wen-Tai, E-mail: wtlin@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Fu, Yaw-Shyan [Department of Greenergy, National University of Tainan, Tainan 700, Taiwan (China); Guo, Tzung-Fang [Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China)

2015-06-01

SnS, Ge- and Sb-doped SnS films with single orthorhombic SnS phase were fabricated via solvothermal routes and subsequent spin-coating, respectively. The substitution solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. The bandgaps of Ge- and Sb-doped SnS films can be tuned in the ranges of 1.25–1.35 and 1.30–1.39 eV, respectively. The possible mechanisms for the tunable bandgaps of Ge- and Sb-doped SnS films are discussed. For the Ge- and Sb-doped SnS films subjected to annealing at 200–350 °C in N{sub 2}, the bandgaps of 200 °C-annealed films remain unchanged, while those of 300 °C- and 350 °C-annealed films decrease with the annealing temperature because of the evaporation of Ge and Sb respectively. - Highlights: • Ge- and Sb-doped SnS films were fabricated via spin-coating. • The solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. • The bandgaps of SnS films can be tuned by Ge and Sb doping respectively. • Annealing above 300 °C reduces the bandgaps of Ge- and Sb-doped SnS films.

Electrostatic separation for recycling conductors, semiconductors, and nonconductors from electronic waste.

Science.gov (United States)

Xue, Mianqiang; Yan, Guoqing; Li, Jia; Xu, Zhenming

2012-10-02

Electrostatic separation has been widely used to separate conductors and nonconductors for recycling e-waste. However, the components of e-waste are complex, which can be classified as conductors, semiconductors, and nonconductors according to their conducting properties. In this work, we made a novel attempt to recover the mixtures containing conductors (copper), semiconductors (extrinsic silicon), and nonconductors (woven glass reinforced resin) by electrostatic separation. The results of binary mixtures separation show that the separation of conductor and nonconductor, semiconductor and nonconductor need a higher voltage level while the separation of conductor and semiconductor needs a higher roll speed. Furthermore, the semiconductor separation efficiency is more sensitive to the high voltage level and the roll speed than the conductor separation efficiency. An integrated process was proposed for the multiple mixtures separation. The separation efficiency of conductors and semiconductors can reach 82.5% and 88%, respectively. This study contributes to the efficient recycling of valuable resources from e-waste.

Silica-air photonic crystal fiber design that permits waveguiding by a true photonic bandgap effect

DEFF Research Database (Denmark)

Barkou, Stig Eigil; Broeng, Jes; Bjarklev, Anders Overgaard

1999-01-01

A theoretical investigation of a novel type of optical fiber is presented. The operation of the fiber relies entirely on wave guidance through the photonic bandgap effect and not on total internal reflection, thereby distinguishing that fiber from all other known fibers, including recently studied...... photonic crystal fibers. The novel fiber has a central low-index core region and a cladding consisting of a silica background material with air holes situated within a honeycomb lattice structure. We show the existence of photonic bandgaps for the silica–air cladding structure and demonstrate how light can...... be guided at the central low-index core region for a well-defined frequency that falls inside the photonic bandgap region of the cladding structure....

Dual-comb spectroscopy of water vapor with a free-running semiconductor disk laser.

Science.gov (United States)

Link, S M; Maas, D J H C; Waldburger, D; Keller, U

2017-06-16

Dual-comb spectroscopy offers the potential for high accuracy combined with fast data acquisition. Applications are often limited, however, by the complexity of optical comb systems. Here we present dual-comb spectroscopy of water vapor using a substantially simplified single-laser system. Very good spectroscopy measurements with fast sampling rates are achieved with a free-running dual-comb mode-locked semiconductor disk laser. The absolute stability of the optical comb modes is characterized both for free-running operation and with simple microwave stabilization. This approach drastically reduces the complexity for dual-comb spectroscopy. Band-gap engineering to tune the center wavelength from the ultraviolet to the mid-infrared could optimize frequency combs for specific gas targets, further enabling dual-comb spectroscopy for a wider range of industrial applications. Copyright © 2017, American Association for the Advancement of Science.

Small-bandgap semiconducting polymers with high near-infrared photoresponse

NARCIS (Netherlands)

Hendriks, K.H.; Li, W.; Wienk, M.M.; Janssen, R.A.J.

2014-01-01

Lowering the optical bandgap of conjugated polymers while maintaining a high efficiency for photoinduced charge transfer to suitable electron acceptors such as fullerene has remained a formidable challenge in the area of organic photovoltaics. Here we present the synthesis and application of a

CMOS bandgap references and temperature sensors and their applications

NARCIS (Netherlands)

Wang, G.

2005-01-01

Two main parts have been presented in this thesis: device characterization and circuit. In integrated bandgap references and temperature sensors, the IC(VBE, characteristics of bipolar transistors are used to generate the basic signals with high accuracy. To investigate the possibilities to

Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage

Science.gov (United States)

Limpert, Steven; Burke, Adam; Chen, I.-Ju; Anttu, Nicklas; Lehmann, Sebastian; Fahlvik, Sofia; Bremner, Stephen; Conibeer, Gavin; Thelander, Claes; Pistol, Mats-Erik; Linke, Heiner

2017-10-01

Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated ‘hot carriers’ before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier, an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells.

Direct femtosecond observation of charge carrier recombination in ternary semiconductor nanocrystals: The effect of composition and shelling

KAUST Repository

Bose, Riya

2015-02-12

Heavy-metal free ternary semiconductor nanocrystals are emerging as key materials in photoactive applications. However, the relative abundance of intra-bandgap defect states and lack of understanding of their origins within this class of nanocrystals are major factors limiting their applicability. To remove these undesirable defect states which considerably shorten the lifetimes of photogenerated excited carriers, a detailed understanding about their origin and nature is required. In this report, we monitor the ultrafast charge carrier dynamics of CuInS2 (CIS), CuInSSe (CISSe), and CuInSe2 (CISe) nanocrystals, before and after ZnS shelling, using state-of-the-art time-resolved laser spectroscopy with broadband capabilities. The experimental results demonstrate the presence of both electron and hole trapping intra-bandgap states in the nanocrystals which can be removed significantly by ZnS shelling, and the carrier dynamics is slowed down. Another important observation remains the reduction of carrier lifetime in the presence of Se, and the shelling strategy is observed to be less effective at suppressing trap states. This study provides quantitative physical insights into the role of anion composition and shelling on the charge carrier dynamics in ternary CIS, CISSe, and CISe nanocrystals which are essential to improve their applicability for photovoltaics and optoelectronics.

Wide Band-Gap Semiconductor Radiation Detectors: Science Fiction, Horror Story, or Headlines (460th Brookhaven Lecture)

International Nuclear Information System (INIS)

James, Ralph

2010-01-01

With radiation constantly occurring from natural sources all around us -- from food, building materials, and rays from the sun, to name a few -- detecting radiotracers for medical procedures and other radiation to keep people safe is not easy. In order to make better use of radiation to diagnose or treat certain health conditions, or to track radiological materials being transported, stored, and used, the quest is on to develop improved radiation detectors. James gives a brief introduction on radiation detection and explain how it is used in applications ranging from medical to homeland security. He then discusses how new materials and better ways to analyze them here at the National Synchrotron Light Source (NSLS) and the future NSLS-II will lead to a new class of radiation detectors that will provide unprecedented advances in medical and industrial imaging, basic science, and the nonproliferation of nuclear materials.

Energy relaxation and heating of magnons in ferromagnetic semiconductors

International Nuclear Information System (INIS)

Korenblit, I.Ya.; Tankhilevich, B.G.

1976-01-01

The warming-up of electrons and magnons by a high electrical field in ferromagnetic semiconductors with wide conduction bands has been considered. The warming-up of magnons determines the dependence of the magnetic characteristics of the semiconductor (for example, its magnetization) on the electric field and leads to some interesting peculiarities in the current-voltage characteristic (CVC). In some cases, owing to a rapid decrease of electrical conductivity with the increasing temperature of magnons, the CVC may contain a descending part. Since the energy relaxation of magnons occurs very slowly, the time during which the stationary state sets in, although varying widely as a function of the lattice temperature T and the electron gas concentration n, may reach values of the order of milliseconds

Water-dependent photonic bandgap in silica artificial opals.

Science.gov (United States)

Gallego-Gómez, Francisco; Blanco, Alvaro; Canalejas-Tejero, Victor; López, Cefe

2011-07-04

Some characteristics of silica--based structures-like the photonic properties of artificial opals formed by silica spheres--can be greatly affected by the presence of adsorbed water. The reversible modification of the water content of an opal is investigated here by moderate heating (below 300 °C) and measuring in situ the changes in the photonic bandgap. Due to reversible removal of interstitial water, large blueshifts of 30 nm and a bandgap narrowing of 7% are observed. The latter is particularly surprising, because water desorption increases the refractive index contrast, which should lead instead to bandgap broadening. A quantitative explanation of this experiment is provided using a simple model for water distribution in the opal that assumes a nonclose-packed fcc structure. This model further predicts that, at room temperature, about 50% of the interstitial water forms necks between nearest-neighbor spheres, which are separated by 5% of their diameter. Upon heating, dehydration predominantly occurs at the sphere surfaces (in the opal voids), so that above 65 °C the remaining water resides exclusively in the necks. A near-close-packed fcc arrangement is only achieved above 200 °C. The high sensitivity to water changes exhibited by silica opals, even under gentle heating of few degrees, must be taken into account for practical applications. Remarkably, accurate control of the distance between spheres--from 16 to 1 nm--is obtained with temperature. In this study, novel use of the optical properties of the opal is made to infer quantitative information about water distribution within silica beads and dehydration phenomena from simple reflection spectra. Taking advantage of the well-defined opal morphology, this approach offers a simple tool for the straightforward investigation of generic adsorption-desorption phenomena, which might be extrapolated to many other fields involving capillary condensation. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGa

Temperature dependent electronic conduction in semiconductors

International Nuclear Information System (INIS)

Roberts, G.G.; Munn, R.W.

1980-01-01

This review describes the temperature dependence of bulk-controlled electronic currents in semiconductors. The scope of the article is wide in that it contrasts conduction mechanisms in inorganic and organic solids and also single crystal and disordered semiconductors. In many experimental situations it is the metal-semiconductor contact or the interface between two dissimilar semiconductors that governs the temperature dependence of the conductivity. However, in order to keep the length of the review within reasonable bounds, these topics have been largely avoided and emphasis is therefore placed on bulk-limited currents. A central feature of electronic conduction in semiconductors is the concentrations of mobile electrons and holes that contribute to the conductivity. Various statistical approaches may be used to calculate these densities which are normally strongly temperature dependent. Section 1 emphasizes the relationship between the position of the Fermi level, the distribution of quantum states, the total number of electrons available and the absolute temperature of the system. The inclusion of experimental data for several materials is designed to assist the experimentalist in his interpretation of activation energy curves. Sections 2 and 3 refer to electronic conduction in disordered solids and molecular crystals, respectively. In these cases alternative approaches to the conventional band theory approach must be considered. For example, the velocities of the charge carriers are usually substantially lower than those in conventional inorganic single crystal semiconductors, thus introducing the possibility of an activated mobility. Some general electronic properties of these materials are given in the introduction to each of these sections and these help to set the conduction mechanisms in context. (orig.)

Blasting detonators incorporating semiconductor bridge technology

Energy Technology Data Exchange (ETDEWEB)

Bickes, R.W. Jr.

1994-05-01

The enormity of the coal mine and extraction industries in Russia and the obvious need in both Russia and the US for cost savings and enhanced safety in those industries suggests that joint studies and research would be of mutual benefit. The author suggests that mine sites and well platforms in Russia offer an excellent opportunity for the testing of Sandia`s precise time-delay semiconductor bridge detonators, with the potential for commercialization of the detonators for Russian and other world markets by both US and Russian companies. Sandia`s semiconductor bridge is generating interest among the blasting, mining and perforation industries. The semiconductor bridge is approximately 100 microns long, 380 microns wide and 2 microns thick. The input energy required for semiconductor bridge ignition is one-tenth the energy required for conventional bridgewire devices. Because semiconductor bridge processing is compatible with other microcircuit processing, timing and logic circuits can be incorporated onto the chip with the bridge. These circuits can provide for the precise timing demanded for cast effecting blasting. Indeed tests by Martin Marietta and computer studies by Sandia have shown that such precise timing provides for more uniform rock fragmentation, less fly rock, reduce4d ground shock, fewer ground contaminants and less dust. Cost studies have revealed that the use of precisely timed semiconductor bridges can provide a savings of $200,000 per site per year. In addition to Russia`s vast mineral resources, the Russian Mining Institute outside Moscow has had significant programs in rock fragmentation for many years. He anticipated that collaborative studies by the Institute and Sandia`s modellers would be a valuable resource for field studies.

Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films

Science.gov (United States)

Hassan, Ali; Jin, Yuhua; Irfan, Muhammad; Jiang, Yijian

2018-03-01

Fermi-Dirac distribution for doped semiconductors and Burstein-Moss effect have been correlated first time to figure out the conductivity type of ZnO. Hall Effect in the Van der Pauw configuration has been applied to reconcile our theoretical estimations which evince our assumption. Band-gap narrowing has been found in all p-type samples, whereas blue Burstein-Moss shift has been recorded in the n-type films. Atomic Force Microscopic (AFM) analysis shows that both p-type and n-type films have almost same granular-like structure with minor change in average grain size (˜ 6 nm to 10 nm) and surface roughness rms value 3 nm for thickness ˜315 nm which points that grain size and surface roughness did not play any significant role in order to modulate the conductivity type of ZnO. X-ray diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDS) and X-ray Photoelectron Spectroscopy (XPS) have been employed to perform the structural, chemical and elemental analysis. Hexagonal wurtzite structure has been observed in all samples. The introduction of nitrogen reduces the crystallinity of host lattice. 97% transmittance in the visible range with 1.4 × 107 Ω-1cm-1 optical conductivity have been detected. High absorption value in the ultra-violet (UV) region reveals that NZOs thin films can be used to fabricate next-generation high-performance UV detectors.

Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films

Directory of Open Access Journals (Sweden)

Ali Hassan

2018-03-01

Full Text Available Fermi-Dirac distribution for doped semiconductors and Burstein-Moss effect have been correlated first time to figure out the conductivity type of ZnO. Hall Effect in the Van der Pauw configuration has been applied to reconcile our theoretical estimations which evince our assumption. Band-gap narrowing has been found in all p-type samples, whereas blue Burstein-Moss shift has been recorded in the n-type films. Atomic Force Microscopic (AFM analysis shows that both p-type and n-type films have almost same granular-like structure with minor change in average grain size (∼ 6 nm to 10 nm and surface roughness rms value 3 nm for thickness ∼315 nm which points that grain size and surface roughness did not play any significant role in order to modulate the conductivity type of ZnO. X-ray diffraction (XRD, Energy Dispersive X-ray Spectroscopy (EDS and X-ray Photoelectron Spectroscopy (XPS have been employed to perform the structural, chemical and elemental analysis. Hexagonal wurtzite structure has been observed in all samples. The introduction of nitrogen reduces the crystallinity of host lattice. 97% transmittance in the visible range with 1.4 × 107 Ω-1cm-1 optical conductivity have been detected. High absorption value in the ultra-violet (UV region reveals that NZOs thin films can be used to fabricate next-generation high-performance UV detectors.

Creation of tunable absolute bandgaps in a two-dimensional anisotropic photonic crystal modulated by a nematic liquid crystal

International Nuclear Information System (INIS)

Liu Chenyang

2008-01-01

Photonic crystals (PCs) have many potential applications because of their ability to control light-wave propagation. We have investigated the tunable absolute bandgap in a two-dimensional anisotropic photonic crystal structures modulated by a nematic liquid crystal. The PC structure composed of an anisotropic-dielectric cylinder in the liquid crystal medium is studied by solving Maxwell's equations using the plane wave expansion method. The photonic band structures are found to exhibit absolute bandgaps for the square and triangular lattices. Numerical simulations show that the absolute bandgaps can be continuously tuned in the square and triangular lattices consisting of anisotropic-dielectric cylinders by infiltrating nematic liquid crystals. Such a mechanism of bandgap adjustment should open up a new application for designing components in photonic integrated circuits

Multilayer Semiconductor Charged-Particle Spectrometers for Accelerator Experiments

Science.gov (United States)

Gurov, Yu. B.; Lapushkin, S. V.; Sandukovsky, V. G.; Chernyshev, B. A.

2018-03-01

The current state of studies in the field of development of multilayer semiconductor systems (semiconductor detector (SCD) telescopes), which allow the energy to be precisely measured within a large dynamic range (from a few to a few hundred MeV) and the particles to be identified in a wide mass range (from pions to multiply charged nuclear fragments), is presented. The techniques for manufacturing the SCD telescopes from silicon and high-purity germanium are described. The issues of measuring characteristics of the constructed detectors and their impact on the energy resolution of the SCD telescopes and on the quality of the experimental data are considered. Much attention is given to the use of the constructed semiconductor devices in experimental studies at accelerators of PNPI (Gatchina), LANL (Los Alamos) and CELSIUS (Uppsala).

Semiconductor Manufacturing equipment introduction

International Nuclear Information System (INIS)

Im, Jong Sun

2001-02-01

This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

Synchrotron radiation studies of inorganic-organic semiconductor interfaces

International Nuclear Information System (INIS)

Evans, D.A.; Steiner, H.J.; Vearey-Roberts, A.R.; Bushell, A.; Cabailh, G.; O'Brien, S.; Wells, J.W.; McGovern, I.T.; Dhanak, V.R.; Kampen, T.U.; Zahn, D.R.T.; Batchelor, D.

2003-01-01

Organic semiconductors (polymers and small molecules) are widely used in electronic and optoelectronic technologies. Many devices are based on multilayer structures where interfaces play a central role in device performance and where inorganic semiconductor models are inadequate. Synchrotron radiation techniques such as photoelectron spectroscopy (PES), near-edge X-ray absorption fine structure (NEXAFS) and X-ray standing wave spectroscopy (XSW) provide a powerful means of probing the structural, electronic and chemical properties of these interfaces. The surface-specificity of these techniques allows key properties to be monitored as the heterostructure is fabricated. This methodology has been directed at the growth of hybrid organic-inorganic semiconductor interfaces involving copper phthalocyanine as the model organic material and InSb and GaAs as the model inorganic semiconductor substrates. Core level PES has revealed that these interfaces are abrupt and chemically inert due to the weak bonding between the molecules and the inorganic semiconductor. NEXAFS studies have shown that there is a preferred orientation of the molecules within the organic semiconductor layers. The valence band offsets for the heterojunctions have been directly measured using valence level PES and were found to be very different for copper phthalocyanine on InSb and GaAs (0.7 and -0.3 eV respectively) although an interface dipole is present in both cases

Semiconductor Ion Implanters

International Nuclear Information System (INIS)

MacKinnon, Barry A.; Ruffell, John P.

2011-01-01

In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

Science.gov (United States)

Rogers, John A; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young

2014-05-20

In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Photoluminescence as a tool for characterizing point defects in semiconductors

Science.gov (United States)

Reshchikov, Michael

2012-02-01

Photoluminescence is one of the most powerful tools used to study optically-active point defects in semiconductors, especially in wide-bandgap materials. Gallium nitride (GaN) and zinc oxide (ZnO) have attracted considerable attention in the last two decades due to their prospects in optoelectronics applications, including blue and ultraviolet light-emitting devices. However, in spite of many years of extensive studies and a great number of publications on photoluminescence from GaN and ZnO, only a few defect-related luminescence bands are reliably identified. Among them are the Zn-related blue band in GaN, Cu-related green band and Li-related orange band in ZnO. Numerous suggestions for the identification of other luminescence bands, such as the yellow band in GaN, or green and yellow bands in ZnO, do not stand up under scrutiny. In these conditions, it is important to classify the defect-related luminescence bands and find their unique characteristics. In this presentation, we will review the origin of the major luminescence bands in GaN and ZnO. Through simulations of the temperature and excitation intensity dependences of photoluminescence and by employing phenomenological models we are able to obtain important characteristics of point defects such as carrier capture cross-sections for defects, concentrations of defects, and their charge states. These models are also used to find the absolute internal quantum efficiency of photoluminescence and obtain information about nonradiative defects. Results from photoluminescence measurements will be compared with results of the first-principle calculations, as well as with the experimental data obtained by other techniques such as positron annihilation spectroscopy, deep-level transient spectroscopy, and secondary ion mass spectrometry.

Phase diagram as a function of temperature and magnetic field for magnetic semiconductors

OpenAIRE

Gonzalez, I.; Castro, J.; Baldomir, D.

2002-01-01

Using an extension of the Nagaev model of phase separation (E.L. Nagaev, and A.I. Podel'shchikov, Sov. Phys. JETP, 71 (1990) 1108), we calculate the phase diagram for degenerate antiferromagnetic semiconductors in the T-H plane for different current carrier densities. Both, wide-band semiconductors and 'double-exchange' materials, are investigated.

Phase diagram as a function of temperature and magnetic field for magnetic semiconductors

Science.gov (United States)

González, I.; Castro, J.; Baldomir, D.

2002-10-01

Using an extension of the Nagaev model of phase separation [E. L. Nagaev and A. I. Podel'shchikov, Sov. Phys. JETP, 71, 1108 (1990)] we calculate the phase diagram for degenerate antiferromagnetic semiconductors in the T-H plane for different current carrier densities. Both wide-band semiconductors and double-exchange materials are investigated.

Leading Modes of the 3pi0 production in proton-proton collisions at incident proton momentum 3.35GeV/c

Science.gov (United States)

Jampana, Balakrishnam R.

The III-nitride semiconductor material system, which consists of InN, GaN, AlN and their alloys, offers a substantial potential in developing ultra-high efficiency photovoltaics mainly due to its wide range of direct-bandgap (0.7 eV -- 3.4 eV), and other electronic, optical and mechanical properties. However, this novel InGaN material system poses technological challenges which extended into the performance of InGaN devices. The development of wide-band gap p--n InGaN homojunction solar cells with bandgap type III-nitride epilayer to reduce the series resistance is evaluated. The III-nitrides are primarily grown on sapphire substrate and in a continued effort they are realized later on silicon substrate. InGaN solar cell structures were grown simultaneously on GaN/sapphire and GaN/silicon templates and their photoresponse is compared.

Ballistic transport in semiconductor nanostructures: From quasi ...

Indian Academy of Sciences (India)

By suitable design it is possible to achieve quasi-ballistic transport in semiconductor nanostructures over times up to the ps-range. Monte-Carlo simulations reveal that under these conditions phase-coherent real-space oscillations of an electron ensemble, generated by fs-pulses become possible in wide potential wells.

Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

Science.gov (United States)

Peaker, A. R.; Markevich, V. P.; Coutinho, J.

2018-04-01

The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review, we describe the most widely used junction spectroscopy approaches for characterizing deep-level defects in semiconductors and present some of the early work on which the principles of today's methodology are based. We outline ab-initio calculations of defect properties and give examples of how density functional theory in conjunction with formation energy and marker methods can be used to guide the interpretation of experimental results. We review recombination, generation, and trapping of charge carriers associated with defects. We consider thermally driven emission and capture and describe the techniques of Deep Level Transient Spectroscopy (DLTS), high resolution Laplace DLTS, admittance spectroscopy, and scanning DLTS. For the study of minority carrier related processes and wide gap materials, we consider Minority Carrier Transient Spectroscopy (MCTS), Optical DLTS, and deep level optical transient spectroscopy together with some of their many variants. Capacitance, current, and conductance measurements enable carrier exchange processes associated with the defects to be detected. We explain how these methods are used in order to understand the behaviour of point defects and the determination of charge states and negative-U (Hubbard correlation energy) behaviour. We provide, or reference, examples from a wide range of materials including Si, SiGe, GaAs, GaP, GaN, InGaN, InAlN, and ZnO.

Optical spectroscopy and imaging of the higher energy excitons and bandgap of monolayer MoS2

Science.gov (United States)

Borys, Nicholas; Bao, Wei; Barnard, Edward; Ko, Changhyun; Tongay, Sefaatin; Wu, Junqiao; Yang, Li; Schuck, P. James

Monolayer MoS2 (ML-MoS2) exhibits a rich manifold of excitons that dictate optoelectronic performance and functionality. Disentangling these states, which include the quasi-particle bandgap, is critical for developing 2D optoelectronic devices that operate beyond the optical bandgap. Whereas photoluminescence (PL) spectroscopy only probes the lowest-energy radiative state and absorption spectroscopy fails to discriminate energetically degenerate states, photoluminescence excitation (PLE) spectroscopy selectively probes only the excited states that thermalize to the emissive ground state exciton. Using PLE spectroscopy of ML-MoS2, we identify the Rydberg series of the exciton A and exciton B states as well as signatures of the quasi-particle bandgap and coupling between the indirect C exciton and the lowest-energy A exciton, which have eluded previous PLE studies. The assignment of these states is confirmed with density functional theory. Mapping the PLE spectrum reveals spatial variations of the higher-energy exciton manifold and quasi-particle bandgap which mirror the heterogeneity in the PL but also indicate variations in local exciton thermalization processes and chemical potentials.

High-Power Yb-Doped Solid-Core Photonic Bandgap Fiber Amplifier at 1150-1200nm

DEFF Research Database (Denmark)

Maruyama, H.; Shirakawa, A.; Ueda, K.

2008-01-01

Solid-core photonic-bandgap fiber amplification at the long-wavelength edge of ytterbium band is reported. A 32W output at 1156nm with a 66% slope efficiency and 9.1W output at 1178nm were succesfully obtained.......Solid-core photonic-bandgap fiber amplification at the long-wavelength edge of ytterbium band is reported. A 32W output at 1156nm with a 66% slope efficiency and 9.1W output at 1178nm were succesfully obtained....

Single-mode very wide tunability in laterally coupled semiconductor lasers with electrically controlled reflectivities

Science.gov (United States)

Griffel, Giora; Chen, Howard Z.; Grave, Ilan; Yariv, Amnon

1991-04-01

The operation of a novel multisection structure comprised of laterally coupled gain-guided semiconductor lasers is demonstrated. It is shown that tunable single longitudinal mode operation can be achieved with a high degree of frequency selectivity. The device has a tuning range of 14.5 nm, the widest observed to date in a monolithic device.

Crystal growth and applications of mercuric iodide. Report S-242-TP

International Nuclear Information System (INIS)

Schieber, M.; Roth, M.; Schnepple, W.F.

1983-01-01

A brief summary is given of a paper which discusses the crystal growth of mercuric iodide, a high-Z wide bandgap semiconductor suitable as a low noise, room temperature x-ray and gamma-ray detector. The paper summarized also reviews the state-of-the-art of the synthesis and purification of the starting material, mechanical properties and dislocation structure of HgI 2 , and recent success in the development of thick HgI 2 spectrometers

14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors

CERN Document Server

Saraniti, M; Nonequilibrium Carrier Dynamics in Semiconductors

2006-01-01

International experts gather every two years at this established conference to discuss recent developments in theory and experiment in non-equilibrium transport phenomena. These developments have been the driving force behind the spectacular advances in semiconductor physics and devices over the last few decades. Originally known as "Hot Carriers in Semiconductors," the 14th conference in the series covered a wide spectrum of traditional topics dealing with non-equilibrium phenomena, ranging from quantum transport to optical phenomena in mesoscopic and nano-scale structures. Particular attention was given this time to emerging areas of this rapidly evolving field, with many sessions covering terahertz devices, high field transport in nitride semiconductors, spintronics, molecular electronics, and bioelectronics applications.

Rational In Silico Design of an Organic Semiconductor with Improved Electron Mobility.

Science.gov (United States)

Friederich, Pascal; Gómez, Verónica; Sprau, Christian; Meded, Velimir; Strunk, Timo; Jenne, Michael; Magri, Andrea; Symalla, Franz; Colsmann, Alexander; Ruben, Mario; Wenzel, Wolfgang

2017-11-01

Organic semiconductors find a wide range of applications, such as in organic light emitting diodes, organic solar cells, and organic field effect transistors. One of their most striking disadvantages in comparison to crystalline inorganic semiconductors is their low charge-carrier mobility, which manifests itself in major device constraints such as limited photoactive layer thicknesses. Trial-and-error attempts to increase charge-carrier mobility are impeded by the complex interplay of the molecular and electronic structure of the material with its morphology. Here, the viability of a multiscale simulation approach to rationally design materials with improved electron mobility is demonstrated. Starting from one of the most widely used electron conducting materials (Alq 3 ), novel organic semiconductors with tailored electronic properties are designed for which an improvement of the electron mobility by three orders of magnitude is predicted and experimentally confirmed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A first-principles study of light non-metallic atom substituted blue phosphorene

Energy Technology Data Exchange (ETDEWEB)

Sun, Minglei [School of Mechanical Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Tang, Wencheng, E-mail: 101000185@seu.edu.cn [School of Mechanical Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Ren, Qingqiang [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, Hunan (China); Wang, Sa-ke [Department of Physics, Southeast University, Nanjing 210096, Jiangsu (China); Yu, Jin [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, Jiangsu (China); Du, Yanhui [School of Mechanical Engineering, Southeast University, Nanjing 211189, Jiangsu (China)

2015-11-30

Graphical abstract: - Highlights: • All the impurities are covalently bonded to blue phosphorene (with a single vacancy). • All the substituted systems are semiconductors. • B-substituted system exhibits direct bandgap semiconductor behavior. • The band gaps with spin polarization are found in C and O-substituted systems. • Our works can paves a new route at nanoscale for novel functionalities of optical and spintronics devices. - Abstract: First-principles calculations are implemented to study the geometric, electronic and magnetic properties of light non-metallic atom (B, C, N, O and F) substituted blue phosphorene. All the substituted systems are highly stable. The B-substituted system is a direct bandgap semiconductor with a bandgap size about 1.5 eV. The C, O-substituted systems are promising systems to explore two-dimensional diluted magnetic semiconductors. Magnetism is observed for C and O substitution, while for the other impurities no magnetic moment is detected. Our works paves a new route at nanoscale for novel functionalities of optical and spintronics devices.

Dye-Sensitized Approaches to Photovoltaics

Science.gov (United States)

Grätzel, Michael

2008-03-01

Sensitization of wide band-gap semiconductors to photons of energy less than the band-gap is a key step in two technically important processes - panchromatic photography and photoelectrochemical solar cells. In both cases the photosensitive species is not the semiconductor - silver halide or metal oxide - but rather an electrochemically active dye. The gap between the highest occupied molecular level (HOMO) and the lowest unoccupied molecular level (LUMO) is less than the band-gap of the semiconductor with which it is associated. It can therefore absorb light of a wavelength longer than that to which the semiconductor itself is sensitive. The electrochemical process is initiated when the dye molecule relaxes from its photoexcited level by electron injection into the semiconductor, which therefore acts as a photoanode. If the dye is in contact with a redox electrolyte, the negative charge represented by the lost electron can be recovered from the reduced state of the redox system, which in return is regenerated by charge transfer from a cathode. An external load completes the electrical circuit. The system therefore represents a conversion of the energy of absorbed photons into an electrical current by a regenerative device in every functional respect analogous to a solid-state photovoltaic cell. As in any engineering system, choice of materials, their optimization and their synergy are essential to efficient operation. While a semiconductor-electrolyte contact is analogous to a Schottky contact, in that a barrier is established between two materials of different conduction mechanism, with the possibility of optical absorption, charge carrier pair generation and separation, it should be remembered that the photogenerated valence band hole in the semiconductor represents a powerful oxidizing agent. Given that the band-gap is related to the strength and therefore the stability of chemical bonding within the semiconductor, for narrow-gap materials the most likely

In- and Ga-based inorganic double perovskites with direct bandgaps for photovoltaic applications.

Science.gov (United States)

Dai, Jun; Ma, Liang; Ju, Minggang; Huang, Jinsong; Zeng, Xiao Cheng

2017-08-16

Double perovskites in the form of A 2 B'B''X 6 (A = Cs, B' = Ag, B'' = Bi) have been reported as potential alternatives to lead-containing organometal trihalide perovskites. However, all double perovskites synthesized to date exhibit indirect bandgaps >1.95 eV, which are undesirable for photovoltaic and optoelectronic applications. Herein, we report a comprehensive computer-aided screening of In- and Ga-based double perovskites for potential photovoltaic applications. To this end, several preconditions are implemented for the screening of optimal candidates, which include structural stability, electronic bandgaps, and optical absorption. Importantly, four In- and Ga-based double perovskites are identified to possess direct bandgaps within the desirable range of 0.9-1.6 eV for photovoltaic applications. Dominant optical absorption of the four double perovskites is found to be in the UV range. The structural and thermal stability of the four double perovskites are examined using both the empirical Goldschmidt ratio and convex-hull calculations. Only Cs 2 AgInBr 6 is predicted to be thermodynamically stable.

Semiconductor-based Multilayer Selective Solar Absorber for Unconcentrated Solar Thermal Energy Conversion.

Science.gov (United States)

Thomas, Nathan H; Chen, Zhen; Fan, Shanhui; Minnich, Austin J

2017-07-13

Solar thermal energy conversion has attracted substantial renewed interest due to its applications in industrial heating, air conditioning, and electricity generation. Achieving stagnation temperatures exceeding 200 °C, pertinent to these technologies, with unconcentrated sunlight requires spectrally selective absorbers with exceptionally low emissivity in the thermal wavelength range and high visible absorptivity for the solar spectrum. In this Communication, we report a semiconductor-based multilayer selective absorber that exploits the sharp drop in optical absorption at the bandgap energy to achieve a measured absorptance of 76% at solar wavelengths and a low emittance of approximately 5% at thermal wavelengths. In field tests, we obtain a peak temperature of 225 °C, comparable to that achieved with state-of-the-art selective surfaces. With straightforward optimization to improve solar absorption, our work shows the potential for unconcentrated solar thermal systems to reach stagnation temperatures exceeding 300 °C, thereby eliminating the need for solar concentrators for mid-temperature solar applications such as supplying process heat.

Two-Dimentional Photonic Crystal Waveguides

DEFF Research Database (Denmark)

Søndergaard, Thomas; Dridi, Kim

1999-01-01

possible a novel class of optical microcavities, whereas line defects make possible a novel class of waveguides. In this paper we will analyze two-dimensional photonic crystal waveguides based on photonic crystals with rods arranged on a triangular and a square lattice using a plane-wave expansion method......In the recent years a new class of periodic high-index contrast dielectric structures, known as photonic bandgap structures, has been discovered. In these structures frequency intervals, known as photonic bandgaps, where propagation of electromagnetic waves is not allowed, exist due to the periodic...... dielectric function. This is analogous to semiconductors, where electronic bandgaps exist due to the periodic arrangement of atoms. As is also the case for semiconductor structures, photonic bandgap structures may become of even greater value when defects are introduced. In particular, point defects make...

1/f Fluctuations in ion implanted metal semiconductor contacts

International Nuclear Information System (INIS)

Stojanovic, M.; Marjanovic, N.; Radojevic, B.

1998-01-01

Ion implanted Metal-Semiconductor contacts is the most widely used structures in electrical devices. Weather complete devices or some parts are of interest, properties of metal-semiconductor junction strongly influence the quality and external characteristic of electronic devices. That is the reason why special attention is paid to the investigation of factor (noise for example) that could influence given junction. Low frequency 1/f fluctuations (noise) are constantly present in metal-semiconductor junction, so measurement of their level as well as the dependence on factors such as temperature must be taken into account in detailed analysis of electrical characteristics of devices such as contact, nuclear detector with surface barrier etc. In this paper we present the results of low frequency noise level measurements on TiN-Ti-Si structures produced by As + ion implantation. (author)

FIR spectroscopy of iron-based semimagnetic semiconductors

NARCIS (Netherlands)

Hausenblas, M.; Claessen, L.M.; Wittlin, A.; Twardowski, A.; Ortenberg, von M.; Jonge, de W.J.M.; Wyder, P.

1989-01-01

We report far-infrared studies of low energy levels of Fe2+ ions in ZnSe and related wide-gap semimagnetic semiconductors in magnetic fields up to 20 T. Transitions between 5E levels are observed and the experimental results are in good agreement with the standard model of single iron impurities in

Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

Directory of Open Access Journals (Sweden)

Kuen-Hsien Wu

2015-09-01

Full Text Available Porous-silicon (PS multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS structure with multiple bandgap energy. Photovoltaic devices were fabricated by depositing aluminum electrodes of Schottky contacts on the surfaces of the developed TLPS structures. The TLPS-based devices exhibit broadband photoresponses within the spectrum of the solar irradiation and get high photocurrent for the incident light of a tungsten lamp. The improved spectral responses of devices are owing to the multi-bandgap structures of TLPS, which are designed with a layered configuration analog to a tandem cell for absorbing a wider energy range of the incidental sun light. The large photocurrent is mainly ascribed to an enhanced light-absorption ability as a result of applying nanoporous-Si thin films as the surface layers to absorb the short-wavelength light and to improve the Schottky contacts of devices. Experimental results reveal that the multi-bandgap PS structures produced from electrochemical-etching of Si wafers are potentially promising for development of highly efficient Si-based solar cells.

Band structure of germanium carbides for direct bandgap silicon photonics

Energy Technology Data Exchange (ETDEWEB)

Stephenson, C. A., E-mail: cstephe3@nd.edu; Stillwell, R. A.; Wistey, M. A. [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); O' Brien, W. A. [Rigetti Quantum Computing, 775 Heinz Avenue, Berkeley, California 94710 (United States); Penninger, M. W. [Honeywell UOP, Des Plaines, Illinois 60016 (United States); Schneider, W. F. [Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Gillett-Kunnath, M. [Department of Chemistry, Syracuse University, Syracuse, New York 13244 (United States); Zajicek, J. [Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Yu, K. M. [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

2016-08-07

Compact optical interconnects require efficient lasers and modulators compatible with silicon. Ab initio modeling of Ge{sub 1−x}C{sub x} (x = 0.78%) using density functional theory with HSE06 hybrid functionals predicts a splitting of the conduction band at Γ and a strongly direct bandgap, consistent with band anticrossing. Photoreflectance of Ge{sub 0.998}C{sub 0.002} shows a bandgap reduction supporting these results. Growth of Ge{sub 0.998}C{sub 0.002} using tetrakis(germyl)methane as the C source shows no signs of C-C bonds, C clusters, or extended defects, suggesting highly substitutional incorporation of C. Optical gain and modulation are predicted to rival III–V materials due to a larger electron population in the direct valley, reduced intervalley scattering, suppressed Auger recombination, and increased overlap integral for a stronger fundamental optical transition.

Visible light photoreactivity from hybridization states between carbon nitride bandgap states and valence states in Nb and Ti oxides

Energy Technology Data Exchange (ETDEWEB)

Lee, Hosik, E-mail: hosiklee@gmail.com [School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology (UNIST), Unist-gil 100 Eonyang-eup, Ulsan 689-798 (Korea, Republic of); Ohno, Takahisa, E-mail: OHNO.Takahisa@nims.go.jp [Global Research Center for Environment and Energy based on Nanomaterials Science (GREEN), National Institute for Material Science, 1-2-1 Sengen, Tsukuba (Japan); Computational Materials Science Unit (CMSU), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047 (Japan)

2013-03-29

Highlights: ► Origin of bandgap reduction for visible photoreactivity is suggested. ► Carbon nitride adsorption in interlayer space can induce the bandgap reduction. ► The electronic structures are studied by density functional theory calculations. - Abstract: For better efficiency as photocatalysts, N-doping for visible light reactivity has been intensively studied in Lamellar niobic and titanic solid acids (HNb{sub 3}O{sub 8}, H{sub 2}Ti{sub 4}O{sub 9}), and its microscopic structures have been debated in this decade. We calculate the layered solid acids’ structures and bandgaps. Bandgap reduction by carbon nitride adsorption in interlayer space is observed computationally. It originates from localized nitrogen states which form delocalized top-valence states by hybridizing with the host oxygen states and can contribute to photo-current.

Linewidth of Cyclotron Absorption in Band-Gap Graphene: Relaxation Time Approximation vs. Monte Carlo Method

OpenAIRE

S.V. Kryuchkov; E.I. Kukhar’; D.V. Zav’yalov

2015-01-01

The power of the elliptically polarized electromagnetic radiation absorbed by band-gap graphene in presence of constant magnetic field is calculated. The linewidth of cyclotron absorption is shown to be non-zero even if the scattering is absent. The calculations are performed analytically with the Boltzmann kinetic equation and confirmed numerically with the Monte Carlo method. The dependence of the linewidth of the cyclotron absorption on temperature applicable for a band-gap graphene in the...

Semiconductor physics

CERN Document Server

Böer, Karl W

2018-01-01

This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

Rare-earth doped boron nitride nanotubes: Synthesis and characterization

Energy Technology Data Exchange (ETDEWEB)

Silva, Wellington Marcos; Sousa, Edesia Martins Barros de, E-mail: wellingtonmarcos@yahoo.com.br [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil)

2016-07-01

Full text: Boron nitride is a heat and chemically resistant refractory compound of boron and nitrogen atoms with the chemical formula BN. This structure exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form (h-BN) corresponding to graphite is the most stable and soft among BN polymorph. However, boron nitride nanotubes (BNNTs) were first time synthesized in 1995 [1] and have a type of one-dimensional (1D) nanostructure. Recently the BNNTs have attracted significant interest for scientific and technological applications due to their Wide bandgap. The Wide-bandgap semiconductors doped with rare-earth are considered as a new type of luminescent material, combining special Wide bandgap semiconducting properties with the rare-earth luminescence feature. BNNTs have a stable wide bandgap of 5.5 eV and super thermal and chemical stabilities, which make BNNTs an ideal nanosized luminescent material [2]. In this study, we report a simple and efficient route for the synthesis of BNNTs doped with samarium and europium. High quality BNNTs doped was produced via CVD technique using NH{sub 3} and N{sub 2} gases as source. Boron amorphous, catalyst and oxides rare-earth powder were used as precursor. Detailed studies involving energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), Raman spectroscopy, Fourier-transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and transmission electron microscope (TEM) were performed in order to characterize the BNNTs as grown. [1] Chopra, N. G.; Luyken, R. J. et al. Science, v. 269, p. 966-967, 1995. [2] Chen, H.; Chen, Y. et al. Adv. Matter. v. 19, p. 1845-1848, 2007. (author)

Rare-earth doped boron nitride nanotubes: Synthesis and characterization

International Nuclear Information System (INIS)

Silva, Wellington Marcos; Sousa, Edesia Martins Barros de

2016-01-01

Full text: Boron nitride is a heat and chemically resistant refractory compound of boron and nitrogen atoms with the chemical formula BN. This structure exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form (h-BN) corresponding to graphite is the most stable and soft among BN polymorph. However, boron nitride nanotubes (BNNTs) were first time synthesized in 1995 [1] and have a type of one-dimensional (1D) nanostructure. Recently the BNNTs have attracted significant interest for scientific and technological applications due to their Wide bandgap. The Wide-bandgap semiconductors doped with rare-earth are considered as a new type of luminescent material, combining special Wide bandgap semiconducting properties with the rare-earth luminescence feature. BNNTs have a stable wide bandgap of 5.5 eV and super thermal and chemical stabilities, which make BNNTs an ideal nanosized luminescent material [2]. In this study, we report a simple and efficient route for the synthesis of BNNTs doped with samarium and europium. High quality BNNTs doped was produced via CVD technique using NH 3 and N 2 gases as source. Boron amorphous, catalyst and oxides rare-earth powder were used as precursor. Detailed studies involving energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), Raman spectroscopy, Fourier-transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and transmission electron microscope (TEM) were performed in order to characterize the BNNTs as grown. [1] Chopra, N. G.; Luyken, R. J. et al. Science, v. 269, p. 966-967, 1995. [2] Chen, H.; Chen, Y. et al. Adv. Matter. v. 19, p. 1845-1848, 2007. (author)

Origin of unusual bandgap shift and dual emission in organic-inorganic lead halide perovskites.

Science.gov (United States)

Dar, M Ibrahim; Jacopin, Gwénolé; Meloni, Simone; Mattoni, Alessandro; Arora, Neha; Boziki, Ariadni; Zakeeruddin, Shaik Mohammed; Rothlisberger, Ursula; Grätzel, Michael

2016-10-01

Emission characteristics of metal halide perovskites play a key role in the current widespread investigations into their potential uses in optoelectronics and photonics. However, a fundamental understanding of the molecular origin of the unusual blueshift of the bandgap and dual emission in perovskites is still lacking. In this direction, we investigated the extraordinary photoluminescence behavior of three representatives of this important class of photonic materials, that is, CH 3 NH 3 PbI 3 , CH 3 NH 3 PbBr 3 , and CH(NH 2 ) 2 PbBr 3 , which emerged from our thorough studies of the effects of temperature on their bandgap and emission decay dynamics using time-integrated and time-resolved photoluminescence spectroscopy. The low-temperature (photoluminescence of CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 reveals two distinct emission peaks, whereas that of CH(NH 2 ) 2 PbBr 3 shows a single emission peak. Furthermore, irrespective of perovskite composition, the bandgap exhibits an unusual blueshift by raising the temperature from 15 to 300 K. Density functional theory and classical molecular dynamics simulations allow for assigning the additional photoluminescence peak to the presence of molecularly disordered orthorhombic domains and also rationalize that the unusual blueshift of the bandgap with increasing temperature is due to the stabilization of the valence band maximum. Our findings provide new insights into the salient emission properties of perovskite materials, which define their performance in solar cells and light-emitting devices.

Optimization and experimental validation of stiff porous phononic plates for widest complete bandgap of mixed fundamental guided wave modes

Science.gov (United States)

Hedayatrasa, Saeid; Kersemans, Mathias; Abhary, Kazem; Uddin, Mohammad; Van Paepegem, Wim

2018-01-01

Phononic crystal plates (PhPs) have promising application in manipulation of guided waves for design of low-loss acoustic devices and built-in acoustic metamaterial lenses in plate structures. The prominent feature of phononic crystals is the existence of frequency bandgaps over which the waves are stopped, or are resonated and guided within appropriate defects. Therefore, maximized bandgaps of PhPs are desirable to enhance their phononic controllability. Porous PhPs produced through perforation of a uniform background plate, in which the porous interfaces act as strong reflectors of wave energy, are relatively easy to produce. However, the research in optimization of porous PhPs and experimental validation of achieved topologies has been very limited and particularly focused on bandgaps of flexural (asymmetric) wave modes. In this paper, porous PhPs are optimized through an efficient multiobjective genetic algorithm for widest complete bandgap of mixed fundamental guided wave modes (symmetric and asymmetric) and maximized stiffness. The Pareto front of optimization is analyzed and variation of bandgap efficiency with respect to stiffness is presented for various optimized topologies. Selected optimized topologies from the stiff and compliant regimes of Pareto front are manufactured by water-jetting an aluminum plate and their promising bandgap efficiency is experimentally observed. An optimized Pareto topology is also chosen and manufactured by laser cutting a Plexiglas (PMMA) plate, and its performance in self-collimation and focusing of guided waves is verified as compared to calculated dispersion properties.

SnO2-Based Nanomaterials: Synthesis and Application in Lithium-Ion Batteries and Supercapacitors

OpenAIRE

Zhao, Qinqin; Ma, Lisha; Zhang, Qiang; Wang, Chenggang; Xu, Xijin

2015-01-01

Tin dioxide (SnO2) is an important n-type wide-bandgap semiconductor, and SnO2-based nanostructures are presenting themselves as one of the most important classes due to their various tunable physicochemical properties. In this paper, we firstly outline the syntheses of phase-pure SnO2 hierarchical structures with different morphologies such as nanorods, nanosheets, and nanospheres, as well as their modifications by doping and compositing with other materials. Then, we reviewed the design of ...

FY 2016 Research Highlights

Energy Technology Data Exchange (ETDEWEB)

2017-03-23

This fact sheet summarizes the research highlights for the Clean Energy Manufacturing Analysis Center (CEMAC) for Fiscal Year 2106. Topics covered include additive manufacturing for the wind industry, biomass-based chemicals substitutions, carbon fiber manufacturing facility siting, geothermal power plant turbines, hydrogen refueling stations, hydropower turbines, LEDs and lighting, light-duty automotive lithium-ion cells, magnetocaloric refrigeration, silicon carbide power electronics for variable frequency motor drives, solar photovoltaics, and wide bandgap semiconductor opportunities in power electronics.

All-PM monolithic fs Yb-fiber laser, dispersion-managed with all-solid photonic bandgap fiber

DEFF Research Database (Denmark)

Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

2009-01-01

All-in-fiber SESAM-modelocked self-starting fiber laser is demonstrated. Cavity dispersion is managed by a spliced-in PM all-solid photonic bandgap fiber. The laser directly delivers 1.25 nJ pulses of 280 fs duration.......All-in-fiber SESAM-modelocked self-starting fiber laser is demonstrated. Cavity dispersion is managed by a spliced-in PM all-solid photonic bandgap fiber. The laser directly delivers 1.25 nJ pulses of 280 fs duration....

Study on Characteristic of CdZnTe Semiconductor Detectors for Alpha Particle Measurement

International Nuclear Information System (INIS)

Kang, Sang Mook; Ha, Jang Ho; Kim, Yong Kyun; Park, Se Hwan; Kim, Han Soo; Chung, Chong Eun

2005-01-01

The last 2-3 years have seen continued effort in the development of a wide band gap room-temperature compound semiconductor devices aimed principally at photon imaging covering hard X-rays, synchrotrons, and low to medium energy gamma rays. Especially, among the semiconductor materials of a wide band gap, CdZnTe(CZT) has commonly used X-ray and gammaray detection applications because of the opportunity to achieve and excellent spectral and spatial resolution. It has recently been demonstrated that CZT can be used as an ancillary detector with the ability to detect both alpha particles and X-ray at room temperature. CZT detectors are relatively inexpensive compared with some silicon detectors, and are priced about the same as amorphous silicon and photodiodes which are routinely used for charged particle detection. In this paper, we investigated the use of the CZT semiconductor material as an alpha particles detector

Elastic Wave Control Beyond Band-Gaps: Shaping the Flow of Waves in Plates and Half-Spaces with Subwavelength Resonant Rods

Directory of Open Access Journals (Sweden)

Andrea Colombi

2017-08-01

Full Text Available In metamaterial science, local resonance and hybridization are key phenomena strongly influencing the dispersion properties; the metasurface discussed in this article created by a cluster of resonators, subwavelength rods, atop an elastic surface being an exemplar with these features. On this metasurface, band-gaps, slow or fast waves, negative refraction, and dynamic anisotropy can all be observed by exploring frequencies and wavenumbers from the Floquet–Bloch problem and by using the Brillouin zone. These extreme characteristics, when appropriately engineered, can be used to design and control the propagation of elastic waves along the metasurface. For the exemplar we consider, two parameters are easily tuned: rod height and cluster periodicity. The height is directly related to the band-gap frequency and, hence, to the slow and fast waves, while the periodicity is related to the appearance of dynamic anisotropy. Playing with these two parameters generates a gallery of metasurface designs to control the propagation of both flexural waves in plates and surface Rayleigh waves for half-spaces. Scalability with respect to the frequency and wavelength of the governing physical laws allows the application of these concepts in very different fields and over a wide range of lengthscales.

Structural and Optoelectronic Properties of Cubic CsPbF3 for Novel Applications

International Nuclear Information System (INIS)

Murtaza, G.; Ahmad, Iftikhar; Maqbool, M.; Rahnamaye Aliabad, H. A.; Afaq, A.

2011-01-01

Chemical bonding as well as structural, electronic and optical properties of CsPbF 3 are calculated using the highly accurate full potential linearized augmented plane-wave method within the framework of density functional theory (DFT). The calculated lattice constant is found to be in good agreement with the experimental results. The electron density plots reveal strong ionic bonding in Cs-F and strong covalent bonding in Pb-F. The calculations show that the material is a direct and wide bandgap semiconductor with a fundamental gap at the R-symmetry point. Optical properties such as the real and imaginary parts of the dielectric function, refractive index, extinction coefficient, reflectivity, optical conductivity and absorption coefficient are also calculated. Based on the calculated wide and direct bandgap, as well as other optical properties of the compound, it is predicted that CsPbF 3 is suitable for optoelectronic devices and anti-reflecting coatings. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Predamage threshold electron emission from insulator and semiconductor surfaces

International Nuclear Information System (INIS)

Siekhaus, W.J.; Kinney, J.H.; Milam, D.

1985-01-01

Predamage electron emission shows a dependence on fluence, bandgap and wavelength consistent with multiphoton excitation across the bandgap and inconsistent with avalanche ionization and thermionic emission models. The electron emission scales with pulselength as 1/√T. 6 references, 8 figures, 1 table

Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe.

Science.gov (United States)

Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

2018-01-01

We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe

Science.gov (United States)

Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

2018-01-01

We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

Intermediate Bandgap Solar Cells From Nanostructured Silicon

Energy Technology Data Exchange (ETDEWEB)

Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

2014-10-30

This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

Nanostructures for Very High Frequency Electronics

National Research Council Canada - National Science Library

Gelmont, Boris

2002-01-01

The study of a new class of mesoscopic high frequency semi-conductor devices based on resonant tunneling in staggered-bandgap heterostructures with III-V semi-conductor ternary alloys such as AlGaSb...

Broadband absorption of semiconductor nanowire arrays for photovoltaic applications

International Nuclear Information System (INIS)

Huang, Ningfeng; Lin, Chenxi; Povinelli, Michelle L

2012-01-01

We use electromagnetic simulations to carry out a systematic study of broadband absorption in vertically-aligned semiconductor nanowire arrays for photovoltaic applications. We study six semiconductor materials that are commonly used for solar cells. We optimize the structural parameters of each nanowire array to maximize the ultimate efficiency. We plot the maximal ultimate efficiency as a function of height to determine how it approaches the perfect-absorption limit. We further show that the ultimate efficiencies of optimized nanowire arrays exceed those of equal-height thin films for all six materials and over a wide range of heights from 100 nm to 100 µm

Novel spin-electronic properties of BC{sub 7} sheets induced by strain

Energy Technology Data Exchange (ETDEWEB)

Xu, Lei; Dai, ZhenHong, E-mail: zhdai@ytu.edu.cn; Sui, PengFei; Sun, YuMing; Wang, WeiTian [Computational Physics Laboratory, Institute of Opto-Electronic Information Science and Technology, Yantai University, Yantai 264005 (China)

2014-11-01

Based on first-principles calculations, the authors have investigated the electronic and magnetic properties of BC{sub 7} sheets with different planar strains. It is found that metal–semiconductor transition appears at the biaxial strain of 15.5%, and the sheets are characteristic of spin-polarized semiconductor with a zero band-gap. The band-gap rapidly increases with strain, and reaches a maximum value of 0.60 eV at the strain of 20%. Subsequently, the band-gap decreases until the strain reaches up to 22% and shows a semiconductor-half metal transformation. It will further present metal properties until the strain is up to the maximum value of 35%. The magnetic moments also have some changes induced by biaxial strain. The numerical analysis shows that the two-dimensional distortions have great influences on the magnetic moments. The novel spin-electronic properties make BC{sub 7} sheets have potential applications in future spintronic nanodevices.

Novel spin-electronic properties of BC7 sheets induced by strain

International Nuclear Information System (INIS)

Xu, Lei; Dai, ZhenHong; Sui, PengFei; Sun, YuMing; Wang, WeiTian

2014-01-01

Based on first-principles calculations, the authors have investigated the electronic and magnetic properties of BC 7 sheets with different planar strains. It is found that metal–semiconductor transition appears at the biaxial strain of 15.5%, and the sheets are characteristic of spin-polarized semiconductor with a zero band-gap. The band-gap rapidly increases with strain, and reaches a maximum value of 0.60 eV at the strain of 20%. Subsequently, the band-gap decreases until the strain reaches up to 22% and shows a semiconductor-half metal transformation. It will further present metal properties until the strain is up to the maximum value of 35%. The magnetic moments also have some changes induced by biaxial strain. The numerical analysis shows that the two-dimensional distortions have great influences on the magnetic moments. The novel spin-electronic properties make BC 7 sheets have potential applications in future spintronic nanodevices

Tunable omnidirectional absorber and mode splitter based on semiconductor photonic crystal

International Nuclear Information System (INIS)

Ding, Guo-Wen; Liu, Shao-Bin; Zhang, Hai-Feng; Kong, Xiang-Kun; Li, Hai-Ming

2015-01-01

In this paper, the properties of one-dimensional (1D) photonic crystals (PCs) composed of the semiconductor (GaAs) and dielectric layers are theoretically investigated by the transfer matrix method (TMM). The absorption of semiconductor layers is investigated theoretically. Due to the magneto-optical Voigt effect, the dielectric constant of the semiconductor is modified differently in different modes and frequency ranges. If the frequency range of the incident wave is larger than the plasma frequency, TE and TM modes of the incident wave will be absorbed in a wide incident angle. TM wave will be absorbed but TE wave will be reflected while the frequency range is less than the plasma frequency. The absorption of semiconductor can also be tuned by varying the external magnetic field. The proposed PCs have a reconfigurable application to design a tunable omnidirectional absorber and mode splitter at same time

The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

International Nuclear Information System (INIS)

Aydin, M. E.

2008-01-01

n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

Ultrasonic bandgaps in 3D-printed periodic ceramic microlattices

Czech Academy of Sciences Publication Activity Database

Kruisová, Alena; Ševčík, Martin; Seiner, Hanuš; Sedlák, Petr; Román-Manso, B.; Miranzo, P.; Belmonte, M.; Landa, Michal

January (2018), s. 91-100 ISSN 0041-624X R&D Projects: GA ČR GA17-01618S Institutional support: RVO:61388998 Keywords : phononic crystals * ceramic s * additive manufacturing * bandgaps * wave propagation * finite elements method Subject RIV: BI - Acoustics OBOR OECD: Applied mechanics Impact factor: 2.327, year: 2016 http://dx.doi.org/10.1016/j.ultras.2017.07.017

Exploring excitonic signal in optical conductivity of ZnO through first-order electron-hole vertex correction

Science.gov (United States)

Khoirunnisa, Humaira; Aziz Majidi, Muhammad

2018-04-01

The emergence of exitonic signal in the optical response of a wide band-gap semiconductor has been a common knowledge in physics. There have been numerous experimental studies exploring the important role of excitons on influencing both the transport and optical properties of the materials. Despite the existence of much information on excitonic effects, there has not been much literature that explores detailed theoretical explanation on how the exitonic signal appears and how it evolves with temperature. Here, we propose a theoretical study on the optical conductivity of ZnO, a well-known wide band-gap semiconductor that we choose as a case study. ZnO has been known to exhibit excitonic states in its optical spectra in the energy range of ∼3.13-3.41 eV, with a high exciton binding energy of ∼60 meV. An experimental study on ZnO in 2014 revealed such a signal in its optical conductivity spectrum. We present a theoretical investigation on the appearance of excitonic signal in optical conductivity of ZnO. We model the wurtzite ZnO within an 8-band k.p approximation. We calculate the optical conductivity by incorporating the first-order vertex correction derived from the Feynman diagrams. Our calculation up to the first-order correction spectrum qualitatively confirms the existence of excitons in wurtzite ZnO.

Extension of the radiative lifetime of Wannier-Mott excitons in semiconductor nanoclusters

International Nuclear Information System (INIS)

Kukushkin, V. A.

2015-01-01

The purpose of the study is to calculate the radiative lifetime of Wannier-Mott excitons in three-dimensional potential wells formed of direct-gap narrow-gap semiconductor nanoclusters in wide-gap semiconductors and assumed to be large compared to the exciton radius. Calculations are carried out for the InAs/GaAs heterosystem. It is shown that, as the nanocluster dimensions are reduced to values on the order of the exciton radius, the exciton radiative lifetime becomes several times longer compared to that in a homogeneous semiconductor. The increase in the radiative lifetime is more pronounced at low temperatures. Thus, it is established that the placement of Wannier-Mott excitons into direct-gap semiconductor nanoclusters, whose dimensions are of the order of the exciton radius, can be used for considerable extension of the exciton radiative lifetime

Fundamentals of semiconductor devices

CERN Document Server

Lindmayer, Joseph

1965-01-01

Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

Localized-Surface-Plasmon Enhanced the 357 nm Forward Emission from ZnMgO Films Capped by Pt Nanoparticles

Directory of Open Access Journals (Sweden)

Song XM

2009-01-01

Full Text Available Abstract The Pt nanoparticles (NPs, which posses the wider tunable localized-surface-plasmon (LSP energy varying from deep ultraviolet to visible region depending on their morphology, were prepared by annealing Pt thin films with different initial mass-thicknesses. A sixfold enhancement of the 357 nm forward emission of ZnMgO was observed after capping with Pt NPs, which is due to the resonance coupling between the LSP of Pt NPs and the band-gap emission of ZnMgO. The other factors affecting the ultraviolet emission of ZnMgO, such as emission from Pt itself and light multi-scattering at the interface, were also discussed. These results indicate that Pt NPs can be used to enhance the ultraviolet emission through the LSP coupling for various wide band-gap semiconductors.

Nanoscale probing of bandgap states on oxide particles using electron energy-loss spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Liu, Qianlang [School for the Engineering of Matter, Transport and Energy, Arizona State University, 85287 AZ (United States); March, Katia [Laboratoire de Physique des Solides, Bâtiment 510, Université Paris-Sud, 91405 Orsay Cedex (France); Crozier, Peter A., E-mail: CROZIER@asu.edu [School for the Engineering of Matter, Transport and Energy, Arizona State University, 85287 AZ (United States)

2017-07-15

Surface and near-surface electronic states were probed with nanometer spatial resolution in MgO and TiO{sub 2} anatase nanoparticles using ultra-high energy resolution electron energy-loss spectroscopy (EELS) coupled to a scanning transmission electron microscope (STEM). This combination allows the surface electronic structure determined with spectroscopy to be correlated with nanoparticle size, morphology, facet etc. By acquiring the spectra in aloof beam mode, radiation damage to the surface can be significantly reduced while maintaining the nanometer spatial resolution. MgO and TiO{sub 2} showed very different bandgap features associated with the surface/sub-surface layer of the nanoparticles. Spectral simulations based on dielectric theory and density of states models showed that a plateau feature found in the pre-bandgap region in the spectra from (100) surfaces of 60 nm MgO nanocubes is consistent with a thin hydroxide surface layer. The spectroscopy shows that this hydroxide species gives rise to a broad filled surface state at 1.1 eV above the MgO valence band. At the surfaces of TiO{sub 2} nanoparticles, pronounced peaks were observed in the bandgap region, which could not be well fitted to defect states. In this case, the high refractive index and large particle size may make Cherenkov or guided light modes the likely causes of the peaks. - Highlights: • Bandgap states detected with aloof beam monochromated EELS on oxide nanoparticle surfaces. • Dielectric theory applied to simulate the spectra and interpret surface structure. • Density of states models also be employed to understand the surface electronic structure. • In MgO, one states associate with water species was found close to the valence band edge. • In anatase, two mid-gap states associated with point defects were found.

Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

Energy Technology Data Exchange (ETDEWEB)

Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana; Jensen, Soren A.; Kuciauskas, Darius; Glynn, Stephen; Barnes, Teresa; Metzger, Wyatt; Burst, James; Jiang, Chun-Sheng; Dippo, Patricia; Harvey, Steve; Teeter, Glenn; Perkins, Craig; Egaas, Brian; Zakutayev, Andriy; Alsmeier, J.-H.; Lussky, T.; Korte, L.; Wilks, R. G.; Bar, M.; Yan, Y.; Lany, Stephan; Zawadzki, Pawel; Park, Ji-Sang; Wei, Suhuai

2016-06-16

Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

A 98 W 1178 nm Yb-doped solid-core photonic bandgap fiber oscillator

International Nuclear Information System (INIS)

Fan, Xinyan; Chen, Mingchen; Shirakawa, Akira; Ueda, Ken-ichi; Olausson, Christina B; Broeng, Jes

2013-01-01

A high-power ytterbium-doped solid-core photonic bandgap fiber laser directly oscillating at 1178 nm is reported. The sharp-cut bandpass distributed filtering effect of photonic bandgap fiber can suppress amplified spontaneous emission (ASE) in the conventional high-gain spectral region. The oscillator is composed of a high reflection fiber Bragg grating spliced with a 39 m gain fiber and a Fresnel fiber end surface. A model based on rate equations is investigated numerically. A record output power of 98 W is achieved with a slope efficiency of 54%. The laser linewidth is 0.5 nm. The spectrum at 98 W indicates that ASE and parasitic lasing are suppressed effectively. (letter)

Broadband optically controlled switching effect in a microfluid-filled photonic bandgap fiber

International Nuclear Information System (INIS)

Guo, Junqi; Liu, Yan-ge; Wang, Zhi; Luo, Mingming; Huang, Wei; Liu, Xiaoqi; Han, Tingting

2016-01-01

Broadband optically controlled switching in a microfluid-filled photonic bandgap fiber (MF-PBGF) was observed and investigated. The MF-PBGF was formed by infusing a temperature-sensitive high-index fluid into all of the cladding holes of a microstructured optical fiber (MOF). The fiber was then side pumped with a 532 nm continuous wave laser. An extinction ratio of greater than 20 dB at most of the bandgap wavelengths (more than 200 nm) was obtained with a switching power of ∼147 mW. Theoretical and experimental investigations revealed that the effect originated from changes in the temperature gradient induced by heat absorption of the fiber coating with laser illumination. These investigations offer a new and simple approach to achieve wideband and flexible all-optical fiber switching devices without using any photosensitive materials. (paper)

State of the art of High Temperature Power Electronics

OpenAIRE

Buttay , Cyril; Planson , Dominique; Allard , Bruno; Bergogne , Dominique; Bevilacqua , Pascal; Joubert , Charles; Lazar , Mihai; Martin , Christian; Morel , Hervé; Tournier , Dominique; Raynaud , Christophe

2009-01-01

International audience; High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500°C, whereas silicon is limited to 150-200°C. Applications such as transportation or deep oil and gas wells drilling can benefit. A few converters operating above 200°C have been demonstrated, but work is still ongoing to design and build a power system able to operate in...

Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery

Science.gov (United States)

E Munson, C., IV; Gaimard, Q.; Merghem, K.; Sundaram, S.; Rogers, D. J.; de Sanoit, J.; Voss, P. L.; Ramdane, A.; Salvestrini, J. P.; Ougazzaden, A.

2018-01-01

GaN is a durable, radiation hard and wide-bandgap semiconductor material, making it ideal for usage with betavoltaic batteries. This paper describes the design, fabrication and experimental testing of 1 cm2 GaN-based betavoltaic batteries (that achieve an output power of 2.23 nW) along with a full model that accurately simulates the device performance which is the highest to date (to the best of our knowledge) for GaN-based devices with a 63Ni source.

Transport properties at 3C-SiC interfaces

OpenAIRE

Eriksson, Gustav Jens Peter

2011-01-01

For years cubic (3C) silicon carbide (SiC) has been believed to be a very promising wide bandgap semiconductor for high frequency and high power electronics. However, 3C-SiC is fraught with large concentrations of various defects, which have so far hindered the achievement of the predicted properties at a macroscopic level. These defects have properties that are inherently nanoscale and that will have a strong influence on the electrical behavior of the material, particularly at interfaces c...