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Sample records for wet etch processing

  1. Effect of wet etching process on the morphology and transmittance of fluorine doped tin oxide (FTO)

    Science.gov (United States)

    Triana, S. L.; Kusumandari; Suryana, R.

    2016-11-01

    Wet etching process was performed on the surface of FTO. The FTO coated glasses subtrates with size of 2×2 cm covered by screen were patterned using zinc powder and concentrated hydrochloric acid (1 M). The substrates were then cleaned in ultrasonic baths of special detergent(helmanex) diluted in deionized water and isopropanol in sequence. The screens with various of hole size denotes by T32, T49 and T55 were used in order to create a pattern of surface textured. The atomic force microscopy (AFM) image revealed that wet etching process changes the morphology of FTO. It indicates that texturization occured. Moreover, from the UV-Vis Spectrophotometer measurement, the transmittance of FTO increase after wet etching process. The time of etching and pattern of screen were affect to the morphology and the transmittance of FTO.

  2. Dry followed by wet backside etching processes for micromachined endfire antennae

    Science.gov (United States)

    Saadaoui, M.; Pons, P.; Plana, R.; Bary, L.; Dubreuil, P.; Bourrier, D.; Vasilache, D.; Neculoiu, D.; Müller, A.

    2005-07-01

    This paper presents a novel technological process based on dry followed by wet backside silicon etching for the manufacturing of 'quasi-three edge' membranes-supported millimeter wave circuits. The process is based on a backside deep reactive ion etching used to remove the first 350 µm of silicon, followed by wet etching in KOH solution, to eliminate the remaining 50 µm of silicon and create quasi-free edge membranes, according to the undercut mechanism. In order to validate the technology, a Yagi-Uda antenna for 45 GHz was designed using the Zeland IE3D software package, and fabricated. The demonstrator was characterized in terms of return loss and isotropic gain using 'on wafer' measurements. The agreement between the modeling and the measurements is very good, and validates the new technological approach, which assures free-space propagation conditions for endfire membrane-supported antennae structures.

  3. Overview of several applications of chemical downstream etching (CDE) for IC manufacturing: advantages and drawbacks versus WET processes

    Science.gov (United States)

    de Buttet, Côme; Prevost, Emilie; Campo, Alain; Garnier, Philippe; Zoll, Stephane; Vallier, Laurent; Cunge, Gilles; Maury, Patrick; Massin, Thomas; Chhun, Sonarith

    2017-03-01

    Today the IC manufacturing faces lots of problematics linked to the continuous down scaling of printed structures. Some of those issues are related to wet processing, which are often used in the IC manufacturing flow for wafer cleaning, material etching and surface preparation. In the current work we summarize the limitations for the next nodes of wet processing such as metallic contaminations, wafer charging, corrosion and pattern collapse. As a replacement, we promoted the isotropic chemical dry etching (CDE) which is supposed to fix all the above drawbacks. Etching steps of SI3N4 layers were evaluated in order to prove the interest of such technique.

  4. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes.

    Science.gov (United States)

    Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

    2016-05-01

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11kg/m(3) of copper and 1.35kg/m(3) of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100-500nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. Copyright © 2016 Elsevier Inc. All rights reserved.

  5. Level Set Approach to Anisotropic Wet Etching of Silicon

    Directory of Open Access Journals (Sweden)

    Branislav Radjenović

    2010-05-01

    Full Text Available In this paper a methodology for the three dimensional (3D modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by means of the interpolation technique using experimentally obtained values for the etching rates along thirteen principal and high index directions in KOH solutions. The resulting level set equations are solved using an open source implementation of the sparse field method (ITK library, developed in medical image processing community, extended for the case of non-convex Hamiltonians. Simulation results for some interesting initial 3D shapes, as well as some more practical examples illustrating anisotropic etching simulation in the presence of masks (simple square aperture mask, convex corner undercutting and convex corner compensation, formation of suspended structures are shown also. The obtained results show that level set method can be used as an effective tool for wet etching process modeling, and that is a viable alternative to the Cellular Automata method which now prevails in the simulations of the wet etching process.

  6. Use of silane-based primer on silicon wafers to enhance adhesion of edge-protective coatings during wet etching: application of the TALON Wrap process

    Science.gov (United States)

    Dalvi-Malhotra, J.; Brand, G. J.; Zhong, X.-F.

    2007-02-01

    Hydrolyzed silane primer solutions were made of an organosilane in glycolether diluted with a large amount of water with or without an acid as a catalyst. The newly developed primer compositions exhibited an extended shelf life of 3 months or more. The compositions were specially designed to accommodate ProTEK TM. layer adhesion in the TALON Wrap. process. In this application, a spin-coatable polymeric material, ProTEK TM., is applied as the protective coating to coat the top, edge, and underside rim of the wafer in preparation for backside etching. By applying an underlayer of primer and an overlayer of ProTEK TM. coating to the top, edge and the bottom side rim of the wafer, an effective encapsulation of the wafer was achieved by using a custom-designed baffle. Each layer was applied by spin coating followed by baking at a wide temperature range. Thermal processing was followed by wet etching in KOH at an elevated temperature for . 10 hr. Post-etched wafers were rinsed with deionized (DI) water. Excellent edge profiles without "knife-edges" were obtained after etching the unprotected areas of the wafer. The process is fully automated because it is carried out in the TALON TM automated wafer-processing tool. Intact films with no lifting or peeling were obtained during or after the KOH etch process/DI rinse for silicon substrates.

  7. Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation

    Directory of Open Access Journals (Sweden)

    Tiago S. Monteiro

    2015-10-01

    Full Text Available In this paper, Isopropanol (IPA availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH solutions was investigated. Squares of 8 to 40 µm were patterned to (100 oriented silicon wafers through DWL (Direct Writing Laser photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing and the angle formed towards the (100 plane.

  8. Development of a high-yield via-last through silicon via process using notchless silicon etching and wet cleaning of the first metal layer

    Science.gov (United States)

    Watanabe, Naoya; Kikuchi, Hidekazu; Yanagisawa, Azusa; Shimamoto, Haruo; Kikuchi, Katsuya; Aoyagi, Masahiro; Nakamura, Akio

    2017-07-01

    A high-yield via-last through silicon via (TSV) process has been developed using notchless Si etching and wet cleaning of the first metal layer. In this process, the notching was suppressed by optimizing the deep Si etching conditions and wet cleaning was performed using an organic alkaline solution to remove reaction products generated by the etchback step on the first metal layer. By this process, a number of small TSVs (TSV diameter: 6 µm TSV depth: 22 µm number of TSVs: 20,000/chip) could be formed uniformly on an 8-in. wafer. The electrical characteristics of small TSVs formed by this via-last TSV process were investigated. The TSV resistance determined by four-terminal measurements was approximately 24 mΩ. The leakage current between the TSV and the Si substrate was 2.5 pA at 5 V. The TSV capacitance determined using an inductance-capacitance-resistance (LCR) meter was 54 fF, while the TSV yield determined from TSV chain measurements was high (83%) over an 8-in. wafer.

  9. Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.

    Science.gov (United States)

    Luo, Dongxiang; Zhao, Mingjie; Xu, Miao; Li, Min; Chen, Zikai; Wang, Lang; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

    2014-07-23

    Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with damage-free back channel wet-etch (BCE) process were investigated. A carbon (C) nanofilm was inserted into the interface between IZO layer and source/drain (S/D) electrodes as a barrier layer. Transmittance electron microscope images revealed that the 3 nm-thick C nanofilm exhibited a good corrosion resistance to a commonly used H3PO4-based etchant and could be easily eliminated. The TFT device with a 3 nm-thick C barrier layer showed a saturated field effect mobility of 14.4 cm(2) V(-1) s(-1), a subthreshold swing of 0.21 V/decade, an on-to-off current ratio of 8.3 × 10(10), and a threshold voltage of 2.0 V. The favorable electrical performance of this kind of IZO-TFTs was due to the protection of the inserted C to IZO layer in the back-channel-etch process. Moreover, the low contact resistance of the devices was proved to be due to the graphitization of the C nanofilms after annealing. In addition, the hysteresis and thermal stress testing confirmed that the usage of C barrier nanofilms is an effective method to fabricate the damage-free BCE-type devices with high reliability.

  10. Physical chemistry of wet chemical anisotropic etching of silicon

    NARCIS (Netherlands)

    Elwenspoek, Michael Curt

    1995-01-01

    In this paper we explain a view to understand the anisotropy of the etching of silicon in certain wet chemical agents (such as KOH). The starting point is the assumption that the [Left angle bracket]111[Right Angle Bracket] face of silicon is a flat face, the etch rate of which is then governed by a

  11. Wet etching methods for perovskite substrates

    NARCIS (Netherlands)

    Leca, V.; Rijnders, Augustinus J.H.M.; Koster, Gertjan; Blank, David H.A.; Rogalla, Horst

    2000-01-01

    In oxide electronics substrates with atomically flat terraces are a request for growing high-quality epitaxial thin films. In this paper results on chemical etching of some substrates with perovskite, ABO3, structure (e.g., SrTiO3, LSAT - the (LaAlO3)0.3(Sr2AlTaO6)0.35 solid solution, and NdGaO3)

  12. Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

    Energy Technology Data Exchange (ETDEWEB)

    Ghulinyan, M., E-mail: ghulinyan@fbk.eu [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Bernard, M.; Bartali, R. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Deptartment of Physics, University of Trento, I-38123 Povo (Italy); Pucker, G. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy)

    2015-12-30

    Highlights: • Photoresist adhesion induces the formation of complex etch profiles in dielectrics. • Hydrofluoric acid etching of silica glass and silicon nitride materials was studied. • The phenomenon has been modeled in analogy with sonic boom propagation. • The material etch rate and resist adhesion/erosion define the final profile. - Abstract: In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

  13. Model of wet chemical etching of swift heavy ions tracks

    Science.gov (United States)

    Gorbunov, S. A.; Malakhov, A. I.; Rymzhanov, R. A.; Volkov, A. E.

    2017-10-01

    A model of wet chemical etching of tracks of swift heavy ions (SHI) decelerated in solids in the electronic stopping regime is presented. This model takes into account both possible etching modes: etching controlled by diffusion of etchant molecules to the etching front, and etching controlled by the rate of a reaction of an etchant with a material. Olivine ((Mg0.88Fe0.12)2SiO4) crystals were chosen as a system for modeling. Two mechanisms of chemical activation of olivine around the SHI trajectory are considered. The first mechanism is activation stimulated by structural transformations in a nanometric track core, while the second one results from neutralization of metallic atoms by generated electrons spreading over micrometric distances. Monte-Carlo simulations (TREKIS code) form the basis for the description of excitations of the electronic subsystem and the lattice of olivine in an SHI track at times up to 100 fs after the projectile passage. Molecular dynamics supplies the initial conditions for modeling of lattice relaxation for longer times. These simulations enable us to estimate the effects of the chemical activation of olivine governed by both mechanisms. The developed model was applied to describe chemical activation and the etching kinetics of tracks of Au 2.1 GeV ions in olivine. The estimated lengthwise etching rate (38 µm · h-1) is in reasonable agreement with that detected in the experiments (24 µm · h-1).

  14. The tailored inner space of TiO2 electrodes via a 30 second wet etching process: high efficiency solid-state perovskite solar cells.

    Science.gov (United States)

    Kwon, Jeong; Kim, Sung June; Park, Jong Hyoek

    2015-06-28

    We fabricated a perovskite solar cell with enhanced device efficiency based on the tailored inner space of the TiO2 electrode by utilizing a very short chemical etching process. It was found that the mesoporous TiO2 photoanode treated with a HF solution exhibited remarkably enhanced power conversion efficiencies under simulated AM 1.5G one sun illumination. The controlled inner space and morphology of the etched TiO2 electrode provide an optimized space for perovskite sensitizers and infiltration of a hole transport layer without sacrificing its original electron transport ability, which resulted in higher JSC, FF and VOC values. This simple platform provides new opportunities for tailoring the microstructure of the TiO2 electrode and has great potential in various optoelectronic devices utilizing metal oxide nanostructures.

  15. Fabrication of volcano-shaped nano-patterned sapphire substrates using colloidal self-assembly and wet chemical etching.

    Science.gov (United States)

    Geng, Chong; Zheng, Lu; Fang, Huajing; Yan, Qingfeng; Wei, Tongbo; Hao, Zhibiao; Wang, Xiaoqing; Shen, Dezhong

    2013-08-23

    Patterned sapphire substrates (PSS) have been widely used to enhance the light output power in GaN-based light emitting diodes. The shape and feature size of the pattern in a PSS affect its enhancement efficiency to a great degree. In this work we demonstrate the nanoscale fabrication of volcano-shaped PSS using a wet chemical etching approach in combination with a colloidal monolayer templating strategy. Detailed analysis by scanning electron microscopy reveals that the unique pattern shape is a result of the different corrosion-resistant abilities of silica masks of different effective heights during wet chemical etching. The formation of silica etching masks of different effective heights has been ascribed to the silica precursor solution in the interstice of the colloidal monolayer template being distributed unevenly after infiltration. In the subsequent wet chemical etching process, the active reaction sites altered as etching duration was prolonged, resulting in the formation of volcano-shaped nano-patterned sapphire substrates.

  16. Wet etching mechanism and crystallization of indium–tin oxide layer for application in light-emitting diodes

    Science.gov (United States)

    Su, Shui-Hsiang; Kong, Hsieng-Jen; Tseng, Chun-Lung; Chen, Guan-Yu

    2018-01-01

    In the article, we describe the etching mechanism of indium–tin oxide (ITO) film, which was wet-etched using a solution of hydrochloric acid (HCl) and ferric chloride (FeCl3). The etching mechanism is analyzed at various etching durations of ITO films by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), and selective area diffraction (SAD) analysis. In comparison with the crystalline phase of SnO2, the In2O3 phase can be more easily transformed to In3+ and can form an inverted conical structure during the etching process. By adjusting the etching duration, the residual ITO is completely removed to show a designed pattern. This is attributed to the negative Gibbs energy of In2O3 transformed to In3+. The result also corresponds to the finding of energy-dispersive X-ray spectroscopy (EDS) analysis that the Sn/In ratio increases with increasing etching duration.

  17. Simulation of the evolution of fused silica's surface defect during wet chemical etching

    Science.gov (United States)

    Liu, Taixiang; Yang, Ke; Li, Heyang; Yan, Lianghong; Yuan, Xiaodong; Yan, Hongwei

    2017-08-01

    Large high-power-laser facility is the basis for achieving inertial confinement fusion, one of whose missions is to make fusion energy usable in the near future. In the facility, fused silica optics plays an irreplaceable role to conduct extremely high-intensity laser to fusion capsule. But the surface defect of fused silica is a major obstacle limiting the output power of the large laser facility and likely resulting in the failure of ignition. To mitigate, or event to remove the surface defect, wet chemical etching has been developed as a practical way. However, how the surface defect evolves during wet chemical etching is still not clearly known so far. To address this problem, in this work, the three-dimensional model of surface defect is built and finite difference time domain (FDTD) method is developed to simulate the evolution of surface defect during etching. From the simulation, it is found that the surface defect will get smooth and result in the improvement of surface quality of fused silica after etching. Comparatively, surface defects (e.g. micro-crack, scratch, series of pinholes, etc.) of a typical fused silica at different etching time are experimentally measured. It can be seen that the simulation result agrees well with the result of experiment, indicating the FDTD method is valid for investigating the evolution of surface defect during etching. With the finding of FDTD simulation, one can optimize the treatment process of fused silica in practical etching or even to make the initial characterization of surface defect traceable.

  18. Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation

    Energy Technology Data Exchange (ETDEWEB)

    Aureau, D., E-mail: damien.aureau@chimie.uvsq.fr [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France); Chaghi, R.; Gerard, I. [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France); Sik, H.; Fleury, J. [Sagem Defense Sécurité, 72-74, rue de la tour Billy, 95101, Argenteuil Cedex (France); Etcheberry, A. [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France)

    2013-07-01

    This paper investigates the wet etching of InSb surfaces by two different oxidant agents: Br{sub 2} and H{sub 2}O{sub 2} and the consecutive oxides generation onto the surfaces. The strong dependence between the chemical composition of the etching baths and the nature of the final surface chemistry of this low band-gap III–V semiconductor will be especially highlighted. One aqueous etching solution combined hydrobromic acid and Bromine (HBr–Br{sub 2}:H{sub 2}O) with adjusted concentrations. The other solution combines orthophosphoric and citric acids with hydrogen peroxide (H{sub 3}PO{sub 4}–H{sub 2}O{sub 2}:H{sub 2}O). Depending on its composition, each formulation gave rise to variable etching rate. The dosage of Indium traces in the etching solution by atomic absorption spectroscopy (AAS) gives the kinetic variation of the dissolution process. The variations on etching rates are associated to the properties and the nature of the formed oxides on InSb surfaces. Surface characterization is specifically performed by X-ray photoelectron spectroscopy (XPS). A clear evidence of the differences between the formed oxides is highlighted. Atomic force microscopy is used to monitor the surface morphology and pointed out that very different final morphologies can be reached. This paper presents new results on the strong variability of the InSb oxides in relation with the InSb reactivity toward environment interaction.

  19. Development of Wet-Etching Tools for Precision Optical Figuring

    Energy Technology Data Exchange (ETDEWEB)

    Rushford, M C; Dixit, S N; Hyde, R; Britten, J A; Nissen, J; Aasen, M; Toeppen, J; Hoaglan, C; Nelson, C; Summers, L; Thomas, I

    2004-01-27

    This FY03 final report on Wet Etch Figuring involves a 2D thermal tool. Its purpose is to flatten (0.3 to 1 mm thickness) sheets of glass faster thus cheaper than conventional sub aperture tools. An array of resistors on a circuit board was used to heat acid over the glass Optical Path Difference (OPD) thick spots and at times this heating extended over the most of the glass aperture. Where the acid is heated on the glass it dissolves faster. A self-referencing interferometer measured the glass thickness, its design taking advantage of the parallel nature and thinness of these glass sheets. This measurement is used in close loop control of the heating patterns of the circuit board thus glass and acid. Only the glass and acid were to be moved to make the tool logistically simple to use in mass production. A set of 4-circuit board, covering 80 x 80-cm aperture was ordered, but only one 40 x 40-cm board was put together and tested for this report. The interferometer measurement of glass OPD was slower than needed on some glass profiles. Sometimes the interference fringes were too fine to resolve which would alias the sign of the glass thickness profile. This also caused the phase unwrapping code (FLYNN) to struggle thus run slowly at times taking hours, for a 10 inch square area. We did extensive work to improve the speed of this code. We tried many different phase unwrapping codes. Eventually running (FLYNN) on a farm of networked computers. Most of the work reported here is therefore limited to a 10-inch square aperture. Researched into fabricating a better interferometer lens from Plexiglas so to have less of the scattered light issues of Fresnel lens groves near field scattering patterns, this set the Nyquest limit. There was also a problem with the initial concept of wetting the 1737 glass on its bottom side with acid. The wetted 1737 glass developed an Achromatic AR coating, spoiling the reflection needed to see glass thickness interference fringes. In response

  20. Unveiling the wet chemical etching characteristics of polydimethylsiloxane film for soft micromachining applications

    Science.gov (United States)

    Kakati, A.; Maji, D.; Das, S.

    2017-01-01

    Micromachining of a polydimethylsiloxane (PDMS) microstructure by wet chemical etching is explored for microelectromechanical systems (MEMS) and microfluidic applications. A 100 µm thick PDMS film was patterned with different microstructure designs by wet chemical etching using a N-methyl-2-pyrrolidone (C16H36FN) and tetra-n-butylammonium fluoride (C5H9NO) mixture solution with 3:1 volume ratio after lithography for studying etching characteristics. The patterning parameters, such as etch rate, surface roughness, pH of etchant solution with time, were thoroughly investigated. A detailed study of surface morphology with etching time revealed nonlinear behaviour of the PDMS surface roughness and etch rate. A maximum rate of 1.45 µm min-1 for 10 min etching with surface roughness of 360 nm was achieved. A new approach of wet chemical etching with pH controlled doped etchant was introduced for lower surface roughness of etched microstructures, and a constant etch rate during etching. Variation of the etching rate and surface roughness by pH controlled etching was performed by doping 5-15 gm l-1 of silicic acid (SiO2x H2O) into the traditional etchant solution. PDMS etching by silicic acid doped etchant solution showed a reduction in surface roughness from 400 nm to 220 nm for the same 15 µm etching. This study is beneficial for micromachining of various MEMS and microfluidic structures such as micropillars, microchannels, and other PDMS microstructures.

  1. Fabrication Challenges for Realization of Wet Etching Based Comb Type Capacitive Microaccelerometer Structure

    Directory of Open Access Journals (Sweden)

    Shankar DUTTA

    2009-12-01

    Full Text Available The current paper presents fabrication of wet etching based comb-type microaccelerometer structure consisting of 47 interdigitated fingers attached to a large proof mass, which is suspended by two narrow torsional beams. Silicon (, p-type was oxidized and the microaccelerometer structure was patterned by photolithography. Desired device thickness was achieved by combination of wet anisotropic etching of 15μm depth and formation of 12 μm thick p++ etch stop layer. Pits of 15 μm were formed in Pyrex glass and metallic lines with bonding pads were formed by UHV Ti-Au metallization and pattern plating (Au. Patterned glass and silicon wafers were aligned and anodically bonded; whereas, the metallic lines and the microaccelerometer anchors are eutectically bonded. Finally, the suspended comb-type device structure consisting of two torsional beams of 5μm width and interdigitated comb fingers of 10μm width is achieved by Dissolve Wafer Process (DWP. The paper highlights the fabrication challenges faced during the realization of the comb-type structure.

  2. Micro-pyramidal structure fabrication on polydimethylsiloxane (PDMS) by Si (100) KOH wet etching

    Science.gov (United States)

    Hwang, Shinae; Lim, Kyungsuk; Shin, Hyeseon; Lee, Seongjae; Jang, Moongyu

    2017-10-01

    A high degree of accuracy in bulk micromachining is essential to fabricate micro-electro-mechanical systems (MEMS) devices. A series of etching experiments is carried out using 40 wt% KOH solutions at the constant temperature of 70 °C. Before wet etching, SF6 and O2 are used as the dry etching gas to etch the masking layers of a 100 nm thick Si3N4 and SiO2, respectively. The experimental results indicate that (100) silicon wafer form the pyramidal structures with (111) single crystal planes. All the etch profiles are analyzed using Scanning Electron Microscope (SEM) and the wet etch rates depend on the opening sizes. The manufactured pyramidal structures are used as the pattern of silicon mold. After a short hardening of coated polydimethylsiloxane (PDMS) layer, micro pyramidal structures are easily transferred to PDMS layer.

  3. Wet process technology in the semiconductor manufacturing process. 1. Physics and chemistry of wet cleaning process; Handotai process ni okeru wet process. Wet senjo no butsuri kagaku

    Energy Technology Data Exchange (ETDEWEB)

    Ryuta, J. [Mitsubishi Materials Corp., Tokyo (Japan)

    1995-03-05

    The wet cleaning consists of a cleaning process in chemicals and a rinse process using ultra-pure water. Among a series of cleaning process, this paper focuses on the SC1 (standard cleaning 1) process using NH4OH, H2O2, and H2O. During the SC1 process, two reactions progress simultaneously, i.e., natural oxidation and etching reactions on the wafer surface. As a consequence of measurement of the oxide film thickness, it was found that the reaction rate during the initial oxidation is extremely high. As a result of measurement of the etching rate, it was also found that the etching reaction is affected by the oxidation reaction. It is illustrated that pits, which are caused by defects in the crystal, are formed during the repeated SC1 process. It is also illustrated that the adsorption and desorption of Fe occur simultaneously on the wafer surface during the SC1 process. It was found that a clean wafer surface can be obtained by removing the particles and metal impurities in the cleaning liquid. 10 refs., 12 figs., 1 tab.

  4. Schottky contact barrier height enhancement on p-type silicon by wet chemical etching

    Science.gov (United States)

    Adegboyega, G. A.; Poggi, A.; Susi, E.; Castaldini, A.; Cavallini, A.

    1989-04-01

    A wet chemical etch preceding the usual cleaning process has been found to yield Schottky barriers of high values on p-type silicon. This procedure produces a passivated surface layer which has resulted in Al/0-Si Schottky diodes with barrier height of 0.75 eV and ideality factor of 1.15. Measurements have confirmed the presence of electrically active donor-like states in this surface layer. The origin of the donor states is explained in terms of the deactivation of the boron acceptor by the formation of H + B - pairs.

  5. Layer roughness reduction and light harvest from Ag nanowires on a silicon surface through wet etching embedding

    Science.gov (United States)

    Dai, Han; Fang, Hongjie; Zhao, Junfeng; Sun, Jie; Yu, Xinxiang; Yu, Kun

    2017-07-01

    Wet etching as a clean method for embedding Ag nanowires into a silicon substrate has been employed to reduce the Ag nanowires layer roughness. Close attachment of the etching holes with Ag nanowires with various diameters was obtained using a simple etching process. Finite-Difference Time-Domain (FDTD) results show that the significant enhancement in light intensity and an increase in light path are caused by the embedding of Ag nanowires into the silicon substrate. These results show that embedding of Ag nanowires into a semiconductor material by etching can simultaneously lead to significant roughness reduction, light scattering enhancement, and charge collection capacity. It is expected that the embedding process will greatly improve the transparency and conductivity of semiconductor materials and has great potential for application in light emitting diodes (LEDs) or solar cells.

  6. Controllable end shape modification of ZnO nano-arrays/rods by a simple wet chemical etching technique

    Science.gov (United States)

    Sun, Jingchang; Zhao, Ting; Ma, Zhangwei; Li, Ming; Chang, Cheng; Liang, Hongwei; Bian, Jiming; Li, Chengren

    2015-09-01

    The well-aligned ZnO nano-arrays/rods synthesized by a chemical bath deposition method on a highly conductive Si substrate were chemically etched in an ammonia chloride aqueous solution. An obvious end shape modification of ZnO nano-arrays/rods was realized in this report. The hexagonal frustum end of ZnO nano-arrays/rods changed into a pyramid and the diameter of ZnO nano-arrays/rods decreased gradually with the increasing etching time. The evolution mechanism of the wet etching process was discussed based on a proposed evolution model. Photoluminescence measurements indicated that the near band edge emissions of ZnO nano-arrays/rods increased greatly after wet etching. The controllable end shape modification of ZnO nano-arrays/rods on a highly conductive Si substrate by this simple wet etching technique will further explore the application of ZnO in field emission devices and 1D based nano-devices with various end shapes.

  7. Spin-on metal oxide materials with high etch selectivity and wet strippability

    Science.gov (United States)

    Yao, Huirong; Mullen, Salem; Wolfer, Elizabeth; McKenzie, Douglas; Rahman, Dalil; Cho, JoonYeon; Padmanaban, Munirathna; Petermann, Claire; Hong, SungEun; Her, YoungJun

    2016-03-01

    Metal oxide or metal nitride films are used as hard mask materials in semiconductor industry for patterning purposes due to their excellent etch resistances against the plasma etches. Chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques are usually used to deposit the metal containing materials on substrates or underlying films, which uses specialized equipment and can lead to high cost-of-ownership and low throughput. We have reported novel spin-on coatings that provide simple and cost effective method to generate metal oxide films possessing good etch selectivity and can be removed by chemical agents. In this paper, new spin-on Al oxide and Zr oxide hard mask formulations are reported. The new metal oxide formulations provide higher metal content compared to previously reported material of specific metal oxides under similar processing conditions. These metal oxide films demonstrate ultra-high etch selectivity and good pattern transfer capability. The cured films can be removed by various chemical agents such as developer, solvents or wet etchants/strippers commonly used in the fab environment. With high metal MHM material as an underlayer, the pattern transfer process is simplified by reducing the number of layers in the stack and the size of the nano structure is minimized by replacement of a thicker film ACL. Therefore, these novel AZ® spinon metal oxide hard mask materials can potentially be used to replace any CVD or ALD metal, metal oxide, metal nitride or spin-on silicon-containing hard mask films in 193 nm or EUV process.

  8. Graphene nanoribbons: Relevance of etching process

    Energy Technology Data Exchange (ETDEWEB)

    Simonet, P., E-mail: psimonet@phys.ethz.ch; Bischoff, D.; Moser, A.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zurich, Zurich 8093 (Switzerland)

    2015-05-14

    Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O{sub 2} plasma ashing and O{sub 2 }+ Ar reactive ion etching (RIE). O{sub 2} plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

  9. Graphene nanoribbons: Relevance of etching process

    Science.gov (United States)

    Simonet, P.; Bischoff, D.; Moser, A.; Ihn, T.; Ensslin, K.

    2015-05-01

    Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O2 plasma ashing and O2 + Ar reactive ion etching (RIE). O2 plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

  10. Quadrilateral Micro-Hole Array Machining on Invar Thin Film: Wet Etching and Electrochemical Fusion Machining.

    Science.gov (United States)

    Choi, Woong-Kirl; Kim, Seong-Hyun; Choi, Seung-Geon; Lee, Eun-Sang

    2018-01-19

    Ultra-precision products which contain a micro-hole array have recently shown remarkable demand growth in many fields, especially in the semiconductor and display industries. Photoresist etching and electrochemical machining are widely known as precision methods for machining micro-holes with no residual stress and lower surface roughness on the fabricated products. The Invar shadow masks used for organic light-emitting diodes (OLEDs) contain numerous micro-holes and are currently machined by a photoresist etching method. However, this method has several problems, such as uncontrollable hole machining accuracy, non-etched areas, and overcutting. To solve these problems, a machining method that combines photoresist etching and electrochemical machining can be applied. In this study, negative photoresist with a quadrilateral hole array pattern was dry coated onto 30-µm-thick Invar thin film, and then exposure and development were carried out. After that, photoresist single-side wet etching and a fusion method of wet etching-electrochemical machining were used to machine micro-holes on the Invar. The hole machining geometry, surface quality, and overcutting characteristics of the methods were studied. Wet etching and electrochemical fusion machining can improve the accuracy and surface quality. The overcutting phenomenon can also be controlled by the fusion machining. Experimental results show that the proposed method is promising for the fabrication of Invar film shadow masks.

  11. Fabrication of a hollow needle structure by dicing, wet etching and metal deposition

    Science.gov (United States)

    Shikida, Mitsuhiro; Hasada, Takehiko; Sato, Kazuo

    2006-10-01

    We previously proposed a novel fabrication process, which combined mechanical dicing and anisotropic wet etching, to reduce the cost of micro-electro-mechanical system devices, and fabricated various solid-type microneedle structures using this process for trans-dermal drug delivery systems. The current research involved us enhancing our previous processes by applying metal plating and using a minimum number of photolithography steps, and we fabricated a hollow-type micro-needle structure, in which a flow channel was formed at the center of the needle projection, for supplying medical solutions from the area behind the needle. We fabricated two different shaped needle structures, pyramidal and flattened needles. The height and pitch of both needle types were 120-250 µm and 230-280 µm, respectively. The developed process is useful for producing disposable microneedles for bio-medical applications.

  12. Improving CDs on a MEBES system by improving the ZEP 7000 development and dry etch process

    Science.gov (United States)

    Albrethsen-Keck, Barbara; Lu, Maiying; Sauer, Charles A.

    1999-12-01

    Previous papers have examined the use of ZEP 7000 resist with dry etch and the compatibility of this process with advanced MEBES writing tools. This paper details further advances made to this process and the improvements in critical dimension (CD) control that can be made by fine-tuning the process. This paper describes how isofocal dose is found experimentally and how a process is established using that dose. The advantage of running a process at or near isofocal is that it provides minimum CD variation. One disadvantage of running at isofocal is that data bias is usually required. With a higher dose than 8 (mu) C/cm2, a new developer solvent from Nippon Zeon (ZED 750) is introduced to have a sufficient number of puddles and a long enough develop time to ensure good uniformity. Results of edge slope (i.e. sidewall profile) comparisons, resolution, and CD uniformity when using this process are presented and compared with results of the established process. Dry etching masks becomes increasingly important as the dimensions on the mask shrink in accordance with the SIA roadmap. The advantage of dry etch over wet etch is its anisotropy and, thus, a much reduced etch CD bias. One disadvantage of dry etch is the resist loss that occurs during plasma etching. The minimal resist thickness required for a dry etch process tends to be larger than that for wet etch. By choosing a different etch chemistry, significant improvements can be made in the selectivity during the dry etch, which is the ratio of the chrome etch rate relative to the ZEP 7000 resist etch rate. Improvements in selectivity may permit the use of thinner resists, resulting in a more robust process. Along with improved selectivity, the etch CD bias is decreased. This reduces the need to bias the data. Results from this alternative chemistry are shown.

  13. Maskless fabrication of concave microlens arrays on silica glasses by a femtosecond-laser-enhanced local wet etching method.

    Science.gov (United States)

    Chen, Feng; Liu, Hewei; Yang, Qing; Wang, Xianhua; Hou, Cong; Bian, Hao; Liang, Weiwei; Si, Jinhai; Hou, Xun

    2010-09-13

    A simple and efficient technique for large-area manufacturing of concave microlens arrays (MLAs) on silica glasses with femtosecond (fs)-laser-enhanced chemical wet etching is demonstrated. By means of fs laser in situ irradiations followed by the hydrofluoric acid etching process, large area close-packed rectangular and hexagonal concave MLAs with diameters less than a hundred of micrometers are fabricated within a few hours. The fabricated MLAs exhibit excellent surface quality and uniformity. In contrast to the classic thermal reflow process, the presented technique is a maskless process and allows the flexible control of the size, shape and the packing pattern of the MLAs by adjusting the parameters such as the pulse energy, the number of shots and etching time.

  14. Chemical and structural changes of quartz surfaces due to structuring by laser-induced backside wet etching.

    Science.gov (United States)

    Kopitkovas, G; Deckert, V; Lippert, T; Raimondi, F; Schneider, C W; Wokaun, A

    2008-06-14

    Various physical and chemical processes which are involved in laser-induced backside wet etching are investigated. The surface of quartz etched by the laser-induced backside wet etching using a XeCl excimer laser at various fluences is analyzed by Raman microscopy, X-ray photoelectron spectroscopy and fiber-tip attenuated total-reflection Fourier-transform infrared spectroscopy. The investigations reveal the formation of a high amount of amorphous carbon deposits at low laser fluences, which strongly adhere to the quartz surface. Combining X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy reveals that the quartz is also chemically and structurally modified due to a loss of oxygen and by a change of the quartz polymorph at intermediate and high laser fluences. These modification and their differences for different fluences are explained by the etching mechanisms itself, i.e. different magnitudes of temperature and pressure jumps. The results show clearly which conditions for etching must be applied to machine high-quality structures, e.g. micro-optical elements in quartz.

  15. RESEARCH PROCESS PLASMA ETCHING SIO2 MEMBRANE

    Directory of Open Access Journals (Sweden)

    T. A. Ismailov

    2014-01-01

    Full Text Available The article discusses the results of plasma chemical etching of silicon dioxide in the fluorine-containing medium in the manufacture of semiconductor devices. Delivered and processed to obtain the solution of the smoothed microrelief contact windows in SiO2 other materials. The solution of the problem is closely connected with the problem of an isotropic plasma chemical etching, when the rate of lateral (horizontal equal to the speed of the vertical etching, which allows to obtain smooth wall structures with maximum care dimensions on the border with photoresist or other masking coating. 

  16. Mapping between two models of etching process

    Directory of Open Access Journals (Sweden)

    T.Patsahan

    2007-12-01

    Full Text Available We consider two models for the etching processes using numerical simulations based on cellular-automata discrete-lattice approach. In the first model we use a uniform etching probability for each surface site. In the second model the etching probability at a given site depends on the local environment of this site. In contrast to the first model we have now a non-local description of the surface evolution. It is natural to consider the following question: is this non-locality sufficient to induce new physics? To answer this question is the main goal of the paper. We show that there exists an equivalence between the two models. This means that the non-local model gives results similar to the local one provided we use an effective value of the etching probability.

  17. Fabrication of nanopores and nanoslits with feature sizes down to 5 nm by wet etching method

    Science.gov (United States)

    Chen, Qi; Wang, Yifan; Deng, Tao; Liu, Zewen

    2018-02-01

    This paper presents an improved three-step wet etching method for the fabrication of single-crystal silicon nanopores and nanoslists. A diffusion model was built to analyze the influence of the color-based feedback mechanism on the final pore size. Reference structures were added aside normal pore patterns, to obtain a more precise control of the pore size during the pore opening process. By using this method, square nanopores with the minimum size of 8 nm × 8 nm, rectangle nanopores and nanoslits with feature sizes down to 5 nm were successfully obtained. Focused ion beam cutting revealed that the nanopore profile keeps well the inverted-pyramid shape, with an included angle of 54.7°.

  18. Dislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etching

    Science.gov (United States)

    Pandey, Akhilesh; Yadav, Brajesh S.; Rao, D. V. Sridhara; Kaur, Davinder; Kapoor, Ashok Kumar

    2016-06-01

    Results on the investigations of the dislocation etch pits in the GaN layers grown on sapphire substrate by metal organic chemical vapor deposition are revealed by wet chemical etching, and dry etching techniques are reported. The wet etching was carried out in molten KOH, and inductively coupled plasma (ICP) was used for dry etching. We show that ICP using dry etching and wet chemical etching using KOH solution under optimal conditions give values of dislocation density comparable to the one obtained from the high-resolution X-ray diffraction, atomic force microscopy and transmission electron microscopy investigations. Investigated threading dislocation density is in the order of ~109/cm2 using different techniques.

  19. Effects of thermo-plasmonics on laser-induced backside wet etching of silicate glass

    Science.gov (United States)

    Tsvetkov, M. Yu; Yusupov, V. I.; Minaev, N. V.; Timashev, P. S.; Golant, K. M.; Bagratashvili, V. N.

    2016-10-01

    The thermo-plasmonic effect (heat deposition via absorption of laser light by metal nanoparticles) is applied to substantially enhance the effectiveness and controllability of the microstructure formation by laser-induced backside wet etching (LIBWE). Experiments were carried out with silicate glass plates using a pulsed 527 nm wavelength laser and an aqueous solution of AgNO3 as a precursor of the Ag nanoparticles. Mechanisms of such thermo-plasmonic LIBWE (TP-LIBWE) versions are considered. They involve: laser-induced photo-thermal reducing of silver (Ag) and self-assembling of Ag nanoparticles in water and the water/glass interface; fast laser-induced overheating of a water and glass surface through the thermo-plasmonic effect; formation of highly reactive supercritical water that causes glass etching and crater formation; generation of steam-gas bubbles in a liquid. It is significant that the emergence of the Marangoni convection results in bubble retention in the focal point at the interface and the accumulation of nanoparticles on the surface of the laser-induced crater, as this facilitates the movement of the bubbles with captured Ag particles from the fluid volume in the crater region, and accelerates the formation of the area of strong ‘surface absorption’ of laser energy. All these mechanisms provide a highly efficient and reproducible process for laser microstructure formation on the surface of glass using a novel TP-LIBWE technique.

  20. Monolithics silicon nano-ridge fabrication by edge lithography and wet anisotropic etching of silicon

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2008-01-01

    A new nanofabrication scheme is presented to form stamps useful in thermal nanoimprint lithography (T-NIL). The stamp is created in <110> single crystalline silicon using a full wet etching procedure including local oxidation of silicon (LOCOS)and employing an adapted edge lithography technique on

  1. A deep micro-trench on silica glass fabricated by laserinduced backside wet etching (LIBWE)

    Energy Technology Data Exchange (ETDEWEB)

    Kawaguchi, Yoshizo; Niino, Hiroyuki; Sato, Tadatake; Narazaki, Aiko; Kurosaki, Ryozo [Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan)

    2007-04-15

    By using laser-induced backside wet etching (LIBWE), we have fabricated very deep micro-trenches in silica glass of 9-{mu}m width and 300-{mu}m depth (aspect ratio {approx} 33). In this paper, we present the details of fabricating the micro-trenches, and discuss why such a deep micro-trench is available by the LIBWE method.

  2. Novel 3D microelectrodes and pipettes by wet and dry etching

    DEFF Research Database (Denmark)

    Dimaki, Maria; Vazquez, Patricia; Aimone, Alessandro

    2012-01-01

    The purpose of this work is to develop novel 3D micro- and nanoelectrodes and pipettes by use of carefully optimised standard microfabrication techniques such as wet (by KOH) and dry silicon etching. Two types of electrodes have been fabricated and characterized: small nanoelectrodes to be used f...

  3. Effect of additional etching and ethanol-wet bonding on the dentin bond strength of one-step self-etch adhesives.

    Science.gov (United States)

    Ahn, Joonghee; Jung, Kyoung-Hwa; Son, Sung-Ae; Hur, Bock; Kwon, Yong-Hoon; Park, Jeong-Kil

    2015-02-01

    This study examined the effects of additional acid etching on the dentin bond strength of one-step self-etch adhesives with different compositions and pH. The effect of ethanol wetting on etched dentin bond strength of self-etch adhesives was also evaluated. Forty-two human permanent molars were classified into 21 groups according to the adhesive types (Clearfil SE Bond [SE, control]; G-aenial Bond [GB]; Xeno V [XV]; Beauti Bond [BB]; Adper Easy Bond [AE]; Single Bond Universal [SU]; All Bond Universal [AU]), and the dentin conditioning methods. Composite resins were placed on the dentin surfaces, and the teeth were sectioned. The microtensile bond strength was measured, and the failure mode of the fractured specimens was examined. The data were analyzed statistically using two-way ANOVA and Duncan's post hoc test. In GB, XV and SE (pH ≤ 2), the bond strength was decreased significantly when the dentin was etched (p 0.05). In AU (pH = 3.2), additional etching increased the bond strength significantly (p adhesives were applied to the acid etched dentin with ethanol-wet bonding, the bond strength was significantly higher than that of the no ethanol-wet bonding groups, and the incidence of cohesive failure was increased. The effect of additional acid etching on the dentin bond strength was influenced by the pH of one-step self-etch adhesives. Ethanol wetting on etched dentin could create a stronger bonding performance of one-step self-etch adhesives for acid etched dentin.

  4. Effect of additional etching and ethanol-wet bonding on the dentin bond strength of one-step self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Joonghee Ahn

    2015-02-01

    Full Text Available Objectives This study examined the effects of additional acid etching on the dentin bond strength of one-step self-etch adhesives with different compositions and pH. The effect of ethanol wetting on etched dentin bond strength of self-etch adhesives was also evaluated. Materials and Methods Forty-two human permanent molars were classified into 21 groups according to the adhesive types (Clearfil SE Bond [SE, control]; G-aenial Bond [GB]; Xeno V [XV]; Beauti Bond [BB]; Adper Easy Bond [AE]; Single Bond Universal [SU]; All Bond Universal [AU], and the dentin conditioning methods. Composite resins were placed on the dentin surfaces, and the teeth were sectioned. The microtensile bond strength was measured, and the failure mode of the fractured specimens was examined. The data were analyzed statistically using two-way ANOVA and Duncan's post hoc test. Results In GB, XV and SE (pH ≤ 2, the bond strength was decreased significantly when the dentin was etched (p 0.05. In AU (pH = 3.2, additional etching increased the bond strength significantly (p < 0.05. When adhesives were applied to the acid etched dentin with ethanol-wet bonding, the bond strength was significantly higher than that of the no ethanol-wet bonding groups, and the incidence of cohesive failure was increased. Conclusions The effect of additional acid etching on the dentin bond strength was influenced by the pH of one-step self-etch adhesives. Ethanol wetting on etched dentin could create a stronger bonding performance of one-step self-etch adhesives for acid etched dentin.

  5. Effect of additional etching and ethanol-wet bonding on the dentin bond strength of one-step self-etch adhesives

    Science.gov (United States)

    Ahn, Joonghee; Jung, Kyoung-Hwa; Son, Sung-Ae; Hur, Bock; Kwon, Yong-Hoon

    2015-01-01

    Objectives This study examined the effects of additional acid etching on the dentin bond strength of one-step self-etch adhesives with different compositions and pH. The effect of ethanol wetting on etched dentin bond strength of self-etch adhesives was also evaluated. Materials and Methods Forty-two human permanent molars were classified into 21 groups according to the adhesive types (Clearfil SE Bond [SE, control]; G-aenial Bond [GB]; Xeno V [XV]; Beauti Bond [BB]; Adper Easy Bond [AE]; Single Bond Universal [SU]; All Bond Universal [AU]), and the dentin conditioning methods. Composite resins were placed on the dentin surfaces, and the teeth were sectioned. The microtensile bond strength was measured, and the failure mode of the fractured specimens was examined. The data were analyzed statistically using two-way ANOVA and Duncan's post hoc test. Results In GB, XV and SE (pH ≤ 2), the bond strength was decreased significantly when the dentin was etched (p 0.05). In AU (pH = 3.2), additional etching increased the bond strength significantly (p adhesives were applied to the acid etched dentin with ethanol-wet bonding, the bond strength was significantly higher than that of the no ethanol-wet bonding groups, and the incidence of cohesive failure was increased. Conclusions The effect of additional acid etching on the dentin bond strength was influenced by the pH of one-step self-etch adhesives. Ethanol wetting on etched dentin could create a stronger bonding performance of one-step self-etch adhesives for acid etched dentin. PMID:25671215

  6. Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

    Directory of Open Access Journals (Sweden)

    Chien-Wei Liu

    2012-01-01

    Full Text Available Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

  7. Composite shear bond strength to dry and wet enamel with three self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Shafiee F

    2006-01-01

    Full Text Available Background and Aim: The bonding mechanisms of self etching primers, based upon the simultaneous etching and priming of dentin, simplifies the bonding technique, but the efficiency of these systems is still controversial. This study compared the shear bond strength of three self etch adhesive systems in dry and wet conditions. Materials and Method: In this experimental study, 77 intact bovine lower incisors with flat 600 grit sanded enamel surface were fixed in acrylic molds and divided into 7 groups, of 11 teeth. The enamel surfaces were treated according to a special procedure as follows: Group 1: Prompt L-Pop (PLP in dry condition, Group 2: Prompt L-Pop in wet condition, Group 3: Clearfield SE Bond (CSEB in dry condition, Group 4: Clearfield SE Bond in wet condition, Group 5: iBond (iB in dry condition, Group 6: iBond in wet condition, Group 7: Margin Bond (Control in dry condition. Surfaces were air dried for ten seconds, or blot dried in wet condition. Composite resin was bonded on the enamel and built up by applying a cylindric teflon split mold (4 mm height 2mm diameter. After 24 hours storage in dionized water at room temperature, all specimens were thermocycled and shear bond test was employed by a universal testing machine (Instron with a cross-head speed of 1mm/min. The shear bond strength was recorded in MPa and data were analyzed with ANOVA and Scheffe statistical tests. P<0.05 was considered as statistically significant. The mode of failure was examined under a stereomicroscope. Results: 1- Shear bond strength of CSEB in dry condition (21.5 ± 4.8 MPa was significantly higher than PLP and iB groups (p<0.0001. 2- Shear bond strength of iB and PLP groups in dry condition (9.60 ± 2.2, 9.49 ± 3 MPa were significantly lower than CSEB and control (2.99 ± 5.1 MPa (P<0.0001. 3- There was no significant difference between PLP and iB groups in dry condition (P=1. 4- Shear bond strength of CSEB in wet condition (21.8 ± 3 MPa was

  8. Micropore x-ray optics using anisotropic wet etching of (110) silicon wafers.

    Science.gov (United States)

    Ezoe, Yuichiro; Koshiishi, Masaki; Mita, Makoto; Mitsuda, Kazuhisa; Hoshino, Akio; Ishisaki, Yoshitaka; Yang, Zhen; Takano, Takayuki; Maeda, Ryutaro

    2006-12-10

    To develop x-ray mirrors for micropore optics, smooth silicon (111) sidewalls obtained after anisotropic wet etching of a silicon (110) wafer were studied. A sample device with 19 microm wide (111) sidewalls was fabricated using a 220 microm thick silicon (110) wafer and potassium hydroxide solution. For what we believe to be the first time, x-ray reflection on the (111) sidewalls was detected in the angular response measurement. Compared to ray-tracing simulations, the surface roughness of the sidewalls was estimated to be 3-5 nm, which is consistent with the atomic force microscope and the surface profiler measurements.

  9. Integration of Electrodeposited Ni-Fe in MEMS with Low-Temperature Deposition and Etch Processes.

    Science.gov (United States)

    Schiavone, Giuseppe; Murray, Jeremy; Perry, Richard; Mount, Andrew R; Desmulliez, Marc P Y; Walton, Anthony J

    2017-03-22

    This article presents a set of low-temperature deposition and etching processes for the integration of electrochemically deposited Ni-Fe alloys in complex magnetic microelectromechanical systems, as Ni-Fe is known to suffer from detrimental stress development when subjected to excessive thermal loads. A selective etch process is reported which enables the copper seed layer used for electrodeposition to be removed while preserving the integrity of Ni-Fe. In addition, a low temperature deposition and surface micromachining process is presented in which silicon dioxide and silicon nitride are used, respectively, as sacrificial material and structural dielectric. The sacrificial layer can be patterned and removed by wet buffered oxide etch or vapour HF etching. The reported methods limit the thermal budget and minimise the stress development in Ni-Fe. This combination of techniques represents an advance towards the reliable integration of Ni-Fe components in complex surface micromachined magnetic MEMS.

  10. Separation of Ga-polar GaN layer from Si substrate by wet chemical etching

    Science.gov (United States)

    Shubina, K. Yu; Berezovskaya, T. N.; Mokhov, D. V.; Mizerov, A. M.; Nikitina, E. V.

    2017-11-01

    In this work the effects of H3PO4:CH3COOH:HNO3:HF etching solution taken with different concentrations to the Ga-polar GaN/SixNy/Si(111) epitaxial structures is investigated. Possibility of at least partial separation of Ga-polar GaN film from the silicon substrate without any GaN surface morphology changes by the selected etchants is demonstrated. The etching process mechanism is shown. Resistivity of the photoresist mask to etchants used in the experiments is found.

  11. Efficient Terahertz Plasmonic Absorbers with V-Grooves Using Highly Doped Silicon Substrate and Simple Wet-Etching Techniques

    Science.gov (United States)

    Zhai, Mengfei; Yuan, Wei; Han, Zhanghua

    2017-12-01

    We experimentally demonstrate that at terahertz frequencies perfect plasmonic absorbers made from a 3D V-groove array in a highly doped silicon wafer can be easily realized using simple wet-etching process. The surface plasmon modes can be excited by the V-groove array and get decayed when they propagate along the silicon surface and enter the grooves, inducing a broadband near-zero dip in the reflection spectra. The reflection spectrum of the fabricated absorber is characterized using a terahertz time-domain spectroscopy system, and the experimental results are in good agreement with numerical simulations. The high performance including high absorptivity and large bandwidth together with the easy fabrication processes presented in this paper make this plasmonic absorber promising for a wide range of practical applications in terahertz regime.

  12. Advanced plasma etching processes for dielectric materials in VLSI technology

    Science.gov (United States)

    Wang, Juan Juan

    Manufacturable plasma etching processes for dielectric materials have played an important role in the Integrated Circuits (IC) industry in recent decades. Dielectric materials such as SiO2 and SiN are widely used to electrically isolate the active device regions (like the gate, source and drain from the first level of metallic interconnects) and to isolate different metallic interconnect levels from each other. However, development of new state-of-the-art etching processes is urgently needed for higher aspect ratio (oxide depth/hole diameter---6:1) in Very Large Scale Integrated (VLSI) circuits technology. The smaller features can provide greater packing density of devices on a single chip and greater number of chips on a single wafer. This dissertation focuses on understanding and optimizing of several key aspects of etching processes for dielectric materials. The challenges are how to get higher selectivity of oxide/Si for contact and oxide/TiN for vias; tight Critical Dimension (CD) control; wide process margin (enough over-etch); uniformity and repeatability. By exploring all of the parameters for the plasma etch process, the key variables are found and studied extensively. The parameters investigated here are Power, Pressure, Gas ratio, and Temperature. In particular, the novel gases such as C4F8, C5F8, and C4F6 were studied in order to meet the requirements of the design rules. We also studied CF4 that is used frequently for dielectric material etching in the industry. Advanced etch equipment was used for the above applications: the medium-density plasma tools (like Magnet-Enhanced Reactive Ion Etching (MERIE) tool) and the high-density plasma tools. By applying the Design of Experiments (DOE) method, we found the key factors needed to predict the trend of the etch process (such as how to increase the etch rates, selectivity, etc.; and how to control the stability of the etch process). We used JMP software to analyze the DOE data. The characterization of the

  13. Design and Analysis of Wet Etching Based Comb Type Capacitive Accelerometer

    Directory of Open Access Journals (Sweden)

    Shankar DUTTA

    2008-04-01

    Full Text Available A wet etching based tilted comb type microaccelerometer has been proposed. This paper deals with the analytical estimation of sensitivity and operating frequency of this oriented silicon-based accelerometer. The mechanical and electrical behaviour of the structure have been simulated by Finite Element Method (FEM by using Intellisuite 6.1 software. Static, modal and dynamic simulations were done. The theoretical and simulated results are compared and found in reasonable agreement. The sensitivity of the structure is found to be ~21 fF/g with a first resonant frequency 843 Hz of twisting mode. The Von Misses stress analysis was done for the beam region. Bandwidth of the structure was found to be 70 Hz for the accelerometer using a 15 mm deep pit in a glass mount.

  14. High-efficiency selective boron emitter formed by wet chemical etch-back for n-type screen-printed Si solar cells

    Science.gov (United States)

    Tao, Yuguo; Madani, Keeya; Cho, Eunhwan; Rounsaville, Brian; Upadhyaya, Vijaykumar; Rohatgi, Ajeet

    2017-01-01

    Front metal contact induced recombination and resistance are major efficiency limiting factors of large-area screen-printed n-type front junction Si solar cells with homogeneous emitter and tunnel oxide passivated back contact (TOPCON). This paper shows the development of a selective boron emitter (p+/p++) formed by a screen-printed resist masking and wet chemical etch-back process, which first grows a porous Si layer and subsequently removes it. Various wet-chemical solutions for forming porous Si layer are investigated. An industrial compatible process with sodium nitrite (NaNO2) catalyst is developed to uniformly etch-back the ˜47 Ω/◻ atmospheric pressure chemical vapor deposited heavily doped boron emitter to ˜135 Ω/◻ by growing a 320 nm porous Si layer within 3 min and subsequently removing it. After etching back, the boron emitter was subjected to a thermal oxidation to lower the surface concentration and the emitter saturation current density J0e. Various etched-back emitters were evaluated by measuring J0e on symmetric test structures with atomic layer deposited aluminum oxide (Al2O3) passivation. Very low J0e of 21, 14, and 9 fA/cm2 were obtained for the 120, 150, and 180 Ω/◻ etched-back emitters, respectively. A solar cell with a selective emitter (65/180 Ω/◻) formed by this etch-back technology and with an Al/Ag contact on the front and TOPCON on the back gave an open-circuit voltage (Voc) of 682.8 mV and efficiency of 21.04% on n-type Czochralski Si wafer. This demonstrates the potential of this technology for next generation high-efficiency industrial n-type Si solar cells.

  15. 180-nm mask fabrication process using ZEP 7000, multipass gray, GHOST, and dry etch for MEBES 5000

    Science.gov (United States)

    Lu, Maiying; Coleman, Thomas P.; Sauer, Charles A.

    1998-12-01

    Advanced reticle specifications for resolution, critical dimension (CD) control and CD linearity of 180-nm generation devices require large-scale improvements to maskmaking processes. The approximately 200 nm of bias required with widely used wet etch processes will not meet these specifications. A solution to the high bias requirement of wet etch processing is to implement a plasma or dry etch process. Plasma etch processing has been shown to have little or no undercutting. However, some of the standard resists used with electron beam (e-beam) exposure of photomasks have poor dry etch characteristics. ZEP 7000 is an e-beam resist that has good dry etch resistance while exhibiting superior lithographic quality. In this paper, processes using ZEP 7000 resist and inductively coupled plasma (ICP) etching are described. The combination of these operations can result in zero bias or near zero bias process with e-beam exposure of photomasks. While the required dose for ZEP 7000 is higher than that of PBS, the higher beam current capability of newer e-beam systems, together with multipass writing strategies, enables the use of these slower resists without throughput penalty. Optimization of the development process was done using a two-component solvent developer. A puddle process was investigated for optimizing sensitivity, edge slope, resist loss, mean-to-target control, and CD uniformity. Dry etching with ICP has been shown to etch chromium films with good selectivity to the resist, give a highly anisotropic etch, and, most significantly, show insensitivity to loading effects. The net result of this effort is the development of a process that gives excellent CD control when meeting MEBES 5000 system requirements for 180-nm maskmaking. Data on resolution, CD control, and defects are presented using this process.

  16. Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

    Directory of Open Access Journals (Sweden)

    Siti Noorhaniah Yusoh

    2016-10-01

    Full Text Available The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH/isopropyl alcohol (IPA on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt % with different IPA concentrations (0, 10, 20, and 30 vol % and etching time durations (30, 40, and 50 s were investigated. The relationships between etching depth and width, and etching rate and surface roughness of silicon nanowires were characterized in detail using atomic force microscopy (AFM. The obtained results indicate that increased IPA concentration in TMAH produced greater width of the silicon nanowires with a smooth surface. It was also observed that the use of a longer etching time causes more unmasked silicon layers to be removed. Importantly, throughout this study, wet etching with optimized parameters can be applied in the design of the devices with excellent performance for many applications.

  17. Collective evolution of submicron hillocks during the early stages of anisotropic alkaline wet chemical etching of Si(1 0 0) surfaces

    Science.gov (United States)

    Sana, P.; Vázquez, Luis; Cuerno, Rodolfo; Sarkar, Subhendu

    2017-11-01

    We address experimentally the large-scale dynamics of Si(1 0 0) surfaces during the initial stages of anisotropic wet (KOH) chemical etching, which are characterized through atomic force microscopy. These systems are known to lead to the formation of characteristic pyramids, or hillocks, of typical sizes in the nanometric/micrometer scales, thus with the potential for a large number of applications that can benefit from the nanotexturing of Si surfaces. The present pattern formation process is very strongly disordered in space. We assess the space correlations in such a type of rough surface and elucidate the existence of a complex and rich morphological evolution, featuring at least three different regimes in just 10 min of etching. Such a complex time behavior cannot be consistently explained within a single formalism for dynamic scaling. The pyramidal structure reveals itself as the basic morphological motif of the surface throughout the dynamics. A detailed analysis of the surface slope distribution with etching time reveals that the texturing process induced by the KOH etching is rather gradual and progressive, which accounts for the dynamic complexity. The various stages of the morphological evolution can be accurately reproduced by computer-generated surfaces composed by uncorrelated pyramidal structures. To reach such an agreement, the key parameters are the average pyramid size, which increases with etching time, its distribution and the surface coverage by the pyramidal structures.

  18. The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001 GaAs Surface

    Directory of Open Access Journals (Sweden)

    Lyamkina AA

    2011-01-01

    Full Text Available Abstract In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height to radius was used as an estimation of wetting angle which depends on the droplet material. The investigation of the wetting angle and the estimation of indium content revealed significant materials intermixing during the deposition time. AFM measurements reveal the presence of two droplet groups that is in agreement with nanohole investigations. To explain this observation, we consider arsenic evaporation and consequent change in the initial substrate. On the basis of our analysis, we suggest the model of droplet evolution and the formation of two droplet groups.

  19. Investigations of CD variation in Cr dry etching process

    Science.gov (United States)

    Handa, Hitoshi; Yamauchi, Satoshi; Hosono, Kouji; Shirai, Hisatsugu

    2001-01-01

    In this report, origins of CD error caused through Cr dry etching were investigated and some process conditions were evaluated for the advanced reticle productions. It is shown that resist patterns of ZEP-7000 written with MEBES-4500 showed a little CD deviation between the sparse and dense regions. These errors could be easily emphasized after Cr dry etching. Some dry etching conditions were examined and slight improvements were confirmed after the addition of etching assist gas and adequate intensity of AC magnetic field of MERIE (Magnetically Enhanced Reactive Ion Etching) system. It is also shown that resist profiles after development play important role in the CD distribution after dry etching for the reticle contained both sparse and dense region on the same plate. With our conventional condition, resist profile of ZEP-7000 showed a gentle slope after development. It is proved that this lower pattern contrast makes the Cr CD difference due to pattern loading much worse. Minimum CD error could be obtained through the process that made resist profile almost vertical. These results imply that total adjustments, not only for dry etching conditions but also for resist process that gives us the highest pattern contrast, are needed to solve the complex issues for the advanced CD control.

  20. Ethanol-wet bonding technique may enhance the bonding performance of contemporary etch-and-rinse dental adhesives.

    Science.gov (United States)

    Li, Fang; Liu, Xiao-Yang; Zhang, Ling; Kang, Jun-Jun; Chen, Ji-Hua

    2012-04-01

    To determine whether bonds of contemporary etch-and-rinse adhesives made with ethanol-wet bonding are stronger and more durable than those made with water-wet bonding, and to explore the possible reasons for the bonding results. Flat surfaces of midcoronal dentin were made in extracted human third molars. The dentin surfaces were randomized into 6 groups according to bonding techniques (water- vs ethanol-wet bonding) and dental adhesives [Single Bond 2 (SB), Prime Bond NT (PB), and Gluma Comfort Bond (GB)]. After etching and rinsing, dentin surfaces were either left water-moist or immersed in ethanol. Following adhesive application and composite buildups, the bonded teeth were sectioned into beams for microtensile bond strength evaluation with or without NaOCl challenge. The morphology of the hybrid layer was analyzed with SEM. The wettability of water- vs. ethanol-saturated dentin was evaluated. The concentrations of non-volatile ingredients in the adhesives were compared. Compared to water-wet bonding, ethanol-wet bonding yielded similar (p > 0.05 for PB and GB) or higher (p adhesives), and produced more even hybrid layers. Moreover, ethanol-saturated dentin exhibited a lower contact angle than water-saturated specimens, and the concentrations of non-volatile ingredients of the adhesives decreased in the order of SB > GB > PB. Ethanol-wet bonding could improve the bonding efficacy of contemporary etch-and-rinse adhesives, probably due to the good wettability of ethanol-saturated dentin and the structure of the hybrid layer. Moreover, this positive effect of ethanol-wet bonding might be influenced by the composition of adhesives.

  1. Influence of sputtering conditions on the optical and electrical properties of laser-annealed and wet-etched room temperature sputtered ZnO:Al thin films

    Energy Technology Data Exchange (ETDEWEB)

    Boukhicha, Rym, E-mail: rym.boukhicha@polytechnique.edu [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Charpentier, Coralie [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Total S and M — New Energies Division, R and D Division, Department of Solar Energies EN/BO/RD/SOL, Tour Michelet, 24 cours Michelet, La Défense 10, 92069 Paris La Défense Cedex (France); Prod' Homme, Patricia [Total S and M — New Energies Division, R and D Division, Department of Solar Energies EN/BO/RD/SOL, Tour Michelet, 24 cours Michelet, La Défense 10, 92069 Paris La Défense Cedex (France); Roca i Cabarrocas, Pere [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Lerat, Jean-François; Emeraud, Thierry [Photovoltaic Business Unit, Excico Group NV, Kempische Steenweg 305/2, B-3500 Hasselt (Belgium); Johnson, Erik [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France)

    2014-03-31

    We explore the influence of the sputtering deposition conditions on the outcome of an excimer laser anneal and chemical etching process with the goal of producing highly textured substrates for thin film silicon solar cells. Aluminum-doped zinc oxide (ZnO:Al) thin films were prepared on glass substrates by radio frequency magnetron sputtering from a ceramic target at room temperature. The effects of the process pressure (0.11–1.2 Pa) and oxygen flow (0–2 sccm) on the optical and electrical properties of ZnO:Al thin films have been studied both before and after an excimer laser annealing treatment followed by a dilute HCl chemical etch. The as-deposited films varied from completely opaque to yellowish. Thin film laser annealing dramatically improves the optical properties of the most opaque thin films. After laser annealing at the optimum fluence, the average transmittance in the visible wavelength range was around 80% for most films, and reasonable electrical performance was obtained for the films deposited at lower pressures and without oxygen flux (7 Ω/□ for films of 1 μm). After etching, all films displayed a dramatic improvement in haze, but only the low pressure, low oxygen films retained acceptable electrical properties (< 11 Ω/□). - Highlights: • Al:ZnO thin films were deposited at room temperature. • The ZnO:Al films were excimer laser annealed and then wet-etched. • The optical and electrical properties were studied in details.

  2. Growth of segmented gold nanorods with nanogaps by the electrochemical wet etching technique for single-electron transistor applications

    Science.gov (United States)

    Hoang, Nguyen Van; Kumar, Sanjeev; Kim, Gil-Ho

    2009-03-01

    The growth of multisegment nanorods comprising gold (Au) and sacrificial silver (Ag) segments (Au-Ag-Au or Au-Ag-Au-Ag-Au) using the electrochemical wet etching method is reported. The nanorods were fabricated using an alumina template of thickness 100 µm and pore size of 200 nm. A variety of nanorods from single to seven segments comprising alternate Au and Ag segments were fabricated with better control of growth rate. The multisegment nanorods were selectively etched by removing the Ag segments to create gaps in the fabricated nanorods. A careful investigation led to the creation of a wide variety of nanogaps in the fabricated multisegment nanorods. The size of the nanogap was controlled by the passage of current through the electrochemical process, and size below 10 nm was achievable at exchanged charges of ~1 mC. A further lowering in the size of nanogaps was achieved by diluting the silver plating solution and a segmented nanorod with nanogap (Au-nanogap-Au) of 3.8 nm at exchanged charges of 0.2 mC was successfully created. In addition, segmented nanorods with two or more nanogaps (Au-nanogap-Au-nanogap-Ag) placed symmetrically and asymmetrically on either side of the central Au segments were also created. A prototype of a single-electron transistor device based on segmented nanorods with two nanogaps is proposed. The results obtained could form the basis for the realization of quantum tunneling devices where the barrier thickness is very critical and demands values less than 5 nm. The encouraging results show the promise of multisegment nanorods for fabricating devices working at the de Broglie wavelength such as single-electron transistors.

  3. Lasing characteristics of 0.8-µm InGaAsP/GaAs lasers fabricated by wet chemical etching

    Science.gov (United States)

    Ishikawa, Joji; Ito, Toshio; Oh-iso, Yoshitaka; Yamamoto, Masahiro; Takahashi, N. Shin-ichi; Kurita, Shoichi

    1989-05-01

    0.8-μm InGaAsP/GaAs stripe lasers, in which cavity mirrors were formed by two-step wet chemical etching, have been fabricated monolithically. The laser resonators were aligned along the and the directions. The first etching was done in 5% Br methanol. The secondary etching was done in H2SO4:H2O2:H2O (3:1:1 by volume) etchant for the active layers only, and gave low threshold lasers. Their threshold current densities were compared with those of the cleaved-mirror lasers made from the same wafer. Some longitudinal lasing modes were observed in the wavelength range of 805-810 nm. The characteristic temperature T0 was 116 K in the temperature range 28-87 °C. The relationship between the state of the etched facets and the near- and far-field patterns was examined. It was found that this two-step etching technique for the laser mirrors is very suitable for aligning the lasers along desirable directions on the same wafer for monolithic integrated optical circuits.

  4. Planar waveguide solar concentrator with couplers fabricated by laser-induced backside wet etching

    Science.gov (United States)

    Zhang, Nikai

    . The fabrication of the etched holes in the glass is proposed to be based on a self-aligned process using a laser-induced backside etching (LIBWE) method, which is discussed in this project and its feasibility is examined. The role of different parameters to the concentration level and the optical efficiency of the CPV system are studied by simulations in ZEMAX (which is a leading optical analysis/design software) using non-sequential ray tracing. The optical efficiency of this design under different light concentration level is studied and discussed. The main contributions of this research consist of a new design of a waveguide-based CPV system which can be made entirely of glass by a low-cost glass fabrication method, and a feasibility study in terms of critical fabrication steps and optical performance.

  5. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Provine, J., E-mail: jprovine@stanford.edu; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Kim, Ki-Hyun [Manufacturing Technology Center, Samsung Electronics, Suwon, Gyeonggi-Do (Korea, Republic of); Prinz, Fritz B. [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2016-06-15

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiN{sub x}), particularly for use a low k dielectric spacer. One of the key material properties needed for SiN{sub x} films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiN{sub x} and evaluate the film’s WER in 100:1 dilutions of HF in H{sub 2}O. The remote plasma capability available in PEALD, enabled controlling the density of the SiN{sub x} film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiN{sub x} of 6.1 Å/min, which is similar to WER of SiN{sub x} from LPCVD reactions at 850 °C.

  6. Single step sequential polydimethylsiloxane wet etching to fabricate a microfluidic channel with various cross-sectional geometries

    Science.gov (United States)

    Wang, C.-K.; Liao, W.-H.; Wu, H.-M.; Lo, Y.-H.; Lin, T.-R.; Tung, Y.-C.

    2017-11-01

    Polydimethylsiloxane (PDMS) has become a widely used material to construct microfluidic devices for various biomedical and chemical applications due to its desirable material properties and manufacturability. PDMS microfluidic devices are usually fabricated using soft lithography replica molding methods with master molds made of photolithogrpahy patterned photoresist layers on silicon wafers. The fabricated microfluidic channels often have rectangular cross-sectional geometries with single or multiple heights. In this paper, we develop a single step sequential PDMS wet etching process that can be used to fabricate microfluidic channels with various cross-sectional geometries from single-layer PDMS microfluidic channels. The cross-sections of the fabricated channel can be non-rectangular, and varied along the flow direction. Furthermore, the fabricated cross-sectional geometries can be numerically simulated beforehand. In the experiments, we fabricate microfluidic channels with various cross-sectional geometries using the developed technique. In addition, we fabricate a microfluidic mixer with alternative mirrored cross-sectional geometries along the flow direction to demonstrate the practical usage of the developed technique.

  7. Effects of Ag nanoshape and AgGa phase in Ag-Si nanostructure using 2-step etching process

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Zhan-Shuo [Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Hung, Fei-Yi, E-mail: fyhung@mail.mse.ncku.edu.tw [Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Chang, Shoou-Jinn, E-mail: changsj@mail.ncku.edu.tw [Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Institute of Microelectronics and Department of Electrical Engineering, Center for Micr/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Chen, Kuan-Jen [Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan (China); Wang, Wen-Long [Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Young, Sheng-Joue; Chen, Tse-Pu [Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan (China)

    2011-01-21

    Research highlights: > In order to connect biotechnology and semiconductor fabrication, the two step DWE (dry-wet etching, DWE) of Si nanohollow structure needs a development. Because the DWE is a new material process, its mechanism has still not been examined, and in particular the redox reaction and the effect of sidewalls. The present nanostructures and results have been obtained by an advanced method, and 15-30 nm Ag nano-particles were able to enhance the DWE mechanism in the Ag/Si nanostructures. - Abstract: The etching scale was controled by the layball process and a focus ion beam (FIB) was used to investige the dry-wet etching (DWE) mechanism. Increasing the beam current of dry-etching raised the height of nano prominent structures, but deteriorated the interface of Ag/Si film, and even damaged the Ag film because of Ga{sup +} bombardment. Regardless of the Ag nanoshape deposition, the residual Ag films were doped with Ga{sup +} and were sensitive to DWE. After wet-etching, the nano hollow formed and the Ag films sunk. However, AgGa sidewall films formed by the concentration gradient and the oxidative potential and this increased the volume of microporous phases, resulting in a reduction in the depth. Also, 15-30 nm Ag nano-particles were able to enhance the DWE mechanism in the Ag/Si nanostructures.

  8. Comparison of EBR-900 M1 and ZEP 7000 with plasma-etch processing for MEBES 4500S

    Science.gov (United States)

    Coleman, Thomas P.; Alexander, David W.; Lu, Maiying

    1997-02-01

    Advanced photomask fabrication specifications for 180 nm generation devices require large-scale improvements to resolution, critical dimension (CD) control, and CD linearity. These requirements mandate the adoption of zero bias processes. The approximately 200 nm of bias required with widely used wet-etch processes cannot meet these advanced specifications. Plasma-etch processing provides an alternative to wet etching and has been shown to have little or no undercutting. However, some of the standard resists used with electron-beam (e-beam) exposure of photomasks have very poor dry-etch characteristics. In this paper, EBR-900 M1 and ZEP 7000 resist processes, in conjunction with inductively coupled plasma (ICP) etching, are described. EBR-900 is a DNQ-novolac i-line resist. The exposure dose and the development process were investigated using a caustic-based developer optimized for e-beam exposure. ZEP 7000 is a polymer of methylstyrene and chloromethyl acrylate, which uses a solvent-based developer. Spray and puddle processes were both investigated for their influence on resist sensitivity, edge slope, resist loss, and CD uniformity. While EBR-900 and ZEP 7000 are less sensitive than PBS, the higher current delivery of newer e- beam systems combined with multipass gray (MPG) writing strategies result in improvements to the lithographic performance without incurring any throughput limitations. MEBES 4500S is the target platform for these processes. It has the gun brightness and writing strategy (MPG) needed to expose these resists while maintaining high throughput.

  9. Evaluation of the soft x-ray reflectivity of micropore optics using anisotropic wet etching of silicon wafers.

    Science.gov (United States)

    Mitsuishi, Ikuyuki; Ezoe, Yuichiro; Koshiishi, Masaki; Mita, Makoto; Maeda, Yoshitomo; Yamasaki, Noriko Y; Mitsuda, Kazuhisa; Shirata, Takayuki; Hayashi, Takayuki; Takano, Takayuki; Maeda, Ryutaro

    2010-02-20

    The x-ray reflectivity of an ultralightweight and low-cost x-ray optic using anisotropic wet etching of Si (110) wafers is evaluated at two energies, C K(alpha)0.28 keV and Al K(alpha)1.49 keV. The obtained reflectivities at both energies are not represented by a simple planar mirror model considering surface roughness. Hence, an geometrical occultation effect due to step structures upon the etched mirror surface is taken into account. Then, the reflectivities are represented by the theoretical model. The estimated surface roughness at C K(alpha) (approximately 6 nm rms) is significantly larger than approximately 1 nm at Al K(alpha). This can be explained by different coherent lengths at two energies.

  10. Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

    Science.gov (United States)

    Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

    2017-09-01

    Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

  11. The wettability between etching solutions and the surface of multicrystalline silicon wafer during metal-assisted chemical etching process

    Science.gov (United States)

    Niu, Y. C.; Liu, Z.; Liu, X. J.; Gao, Y.; Lin, W. L.; Liu, H. T.; Jiang, Y. S.; Ren, X. K.

    2017-01-01

    In order to investigate the wettability of multicrystalline silicon (mc-Si) with the etching solutions during metal-assisted chemical etching process, different surface structures were fabricated on the p-type multi-wire slurry sawn mc-Si wafers, such as as-cut wafers, polished wafers, and wafers etched in different solutions. The contact angles of different etching solutions on the surfaces of the wafers were measured. It was noted that all contact angles of etching solutions were smaller than the corresponding ones of deionized water, but the contact angles of different etching solutions were quite different. Among the contact angles of the etching solutions of AgNO3-HF, H2O2-HF, TMAH and HNO3-HF, the contact angle of TMAH solution was much larger than the others and that of HNO3-HF solution was much smaller. It is suggested that the larger contact angle may lead to an unevenly etching of silicon wafer due to the long retention of big bubbles on the wafers in the etching reaction, which should be paid attention to and overcome.

  12. Surface changes of biopolymers PHB and PLLA induced by Ar{sup +} plasma treatment and wet etching

    Energy Technology Data Exchange (ETDEWEB)

    Slepičková Kasálková, N. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Slepička, P., E-mail: petr.slepicka@vscht.cz [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Sajdl, P. [Department of Power Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Švorčík, V. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic)

    2014-08-01

    Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar{sup +} plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers – polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

  13. 3D simulation and analytical model of chemical heating during silicon wet etching in microchannels

    NARCIS (Netherlands)

    Konakov, S.A.; Krzhizhanovskaya, V.V.

    2016-01-01

    We investigate chemical heating of a Silicon-on-Glass (SOG) chip during a highly exothermic reaction of silicon etching in potassium hydroxide (KOH) solution in a microchannel of 100-micron width inside a 1x1 cm SOG chip. Two modeling approaches have been developed, implemented and compared. (1) A

  14. Polydimethyl siloxane wet etching for three dimensional fabrication of microneedle array and high-aspect-ratio micropillars.

    Science.gov (United States)

    Deng, Yu-Luen; Juang, Yi-Je

    2014-03-01

    Among various transdermal drug delivery (TDD) approaches, utilizing the microneedles (MNs) not only can penetrate the skin but also deliver the drug with reduced tissue damage, reduced pain, and no bleeding. However, the MNs with larger height are required to overcome the skin barrier for effective TDD. Unlike 2D patterning, etching polydimethyl siloxane (PDMS) micropillars for fabrication of 3D microstructures is presented. The PDMS micropillars were first constructed by casting PDMS on the computer numerical control-machined cylindrical microwells, which then went through etching process to obtain the MNs for subsequent fabrication of polymer MNs or high aspect ratio micropillars.

  15. Wet oxidation processes for water pollution remediation

    OpenAIRE

    García Molina, Verónica

    2006-01-01

    The main objective of this work was to test the efficiency of wet oxidation processes when treating several types of aqueous wastes. On one side its performance for the abatement of chloro-organic aromatic toxic pollutants, such as 4-chlorophenol and 2,4-dichlorophenol has been studied. On the other hand, wastewater from pulp and paper mills, which has been reported to be an indirect source of entry of chlorophenols in the aquatic environment, has been investigated. More in detail, it has bee...

  16. Similarity ratio analysis for early stage fault detection with optical emission spectrometer in plasma etching process

    National Research Council Canada - National Science Library

    Yang, Jie; McArdle, Conor; Daniels, Stephen

    2014-01-01

    ...) in plasma etching processes using real-time Optical Emission Spectrometer (OES) data as input. The SRA method can help to realise a highly precise control system by detecting abnormal etch-rate faults in real-time during an etching process...

  17. Controllable process of nanostructured GaN by maskless inductively coupled plasma (ICP) etching

    Science.gov (United States)

    Zhao, Yanfei; Wang, Hu; Zhang, Wei; Li, Jiadong; Shen, Yang; Huang, Zengli; Zhang, Jian; Dingsun, An

    2017-11-01

    This work improved the anisotropically etching profile of GaN with Cl2 ICP by adjusting etching pressure and gas flow. High etching rate is achieved by lowering pressure and gas flow instead of increasing etching power. High etching power is unfavorable because it may cause physical damages on the surface. In addition, it is noticed that the material of the carrier, used for holding samples during etching, has significant effects on the morphology and profile of the etched GaN surface. A smooth and large-area GaN surface was achieved by proper ICP etching with a big piece of Si carrier; whereas, with other kinds of carriers, various nano-structures were formed on the GaN surfaces after etching. In fact, it is the etching resistance of carrier materials that impacts the surface profile of etched GaN. Needle-like and grass-like nanostructures on etched GaN surfaces were observed with Al and sapphire carriers, of which the process is very similar to RIE-grass or black-silicon technology. This controllable maskless dry-etching process for the GaN nanostructured surface may show more potential applications in GaN devices.

  18. Process Monitoring, Modeling, and Control of Plasma Etch Systems

    Science.gov (United States)

    Bushman, Scott Gregory

    1995-11-01

    Selective etching of silicon dioxide over silicon is a frequently used process in the manufacture of semiconductor devices. Although central to the microelectronics manufacturing process, control strategies for plasma etch systems have been limited to statistical based process control and recipe control techniques, mainly due to a lack of in-situ real -time measurements of process performance. This dissertation focuses on the design, characterization, and implementation of two diagnostics on a research plasma reactor, and their use for process monitoring, empirical model building and advanced process control. The diagnostics added to the reactor during this research included laser interferometry and voltage and current probes. An algorithm was developed to compute etch rate and end-point condition from the laser interferometer signal in near real-time. The RF monitoring sensor measured information about the RF voltage, current, and phase angle at three locations in the power delivery system--before and after the matching network and at the lower electrode. Transmission line analysis showed the importance of accurate characterization of stray capacitance and inductance in the power delivery system. Plasma parameters of impedance, delivered power, and sheath thickness were computed using simple equivalent circuit models for the plasma discharge. Measurement of fundamental and harmonic components of the RF voltage, current, and phase showed that the power generated in the plasma at harmonic frequencies was approximately 3% of the generator power. These diagnostics provided the foundation for steady-state and dynamic model development of the plasma etch process. Several linear and nonlinear steady-state techniques including regression, neural networks, and projection of latent structures (PLS) were used in empirical model building. Dynamic models were also developed using neural network techniques. It was found that both the regression and recurrent neural network

  19. Superhydrophobic coatings for aluminium surfaces synthesized by chemical etching process

    Directory of Open Access Journals (Sweden)

    Priya Varshney

    2016-10-01

    Full Text Available In this paper, the superhydrophobic coatings on aluminium surfaces were prepared by two-step (chemical etching followed by coating and one-step (chemical etching and coating in a single step processes using potassium hydroxide and lauric acid. Besides, surface immersion time in solutions was varied in both processes. Wettability and surface morphologies of treated aluminium surfaces were characterized using contact angle measurement technique and scanning electron microscopy, respectively. Microstructures are formed on the treated aluminium surfaces which lead to increase in contact angle of the surface (>150°. Also on increasing immersion time, contact angle further increases due to increase in size and depth of microstructures. Additionally, these superhydrophobic coatings show excellent self-cleaning and corrosion-resistant behavior. Water jet impact, floatation on water surface, and low temperature condensation tests assert the excellent water-repellent nature of coatings. Further, coatings are to be found mechanically, thermally, and ultraviolet stable. Along with, these coatings are found to be excellent regeneration ability as verified experimentally. Although aforesaid both processes generate durable and regenerable superhydrophobic aluminium surfaces with excellent self-cleaning, corrosion-resistant, and water-repellent characteristics, but one-step process is proved more efficient and less time consuming than two-step process and promises to produce superhydrophobic coatings for industrial applications.

  20. Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF3 plasma process

    Science.gov (United States)

    Kofuji, Naoyuki; Mori, Masahito; Nishida, Toshiaki

    2017-06-01

    The reaction-limited etching of tungsten (W) with NF3 plasma was performed in an attempt to achieve the uniform lateral etching of W in a deep trench, a capability required by manufacturing processes for three-dimensional NAND flash memory. Reaction-limited etching was found to be possible at high pressures without ion irradiation. An almost constant etching rate that showed no dependence on NF3 pressure was obtained. The effect of varying the wafer temperature was also examined. A higher wafer temperature reduced the threshold pressure for reaction-limited etching and also increased the etching rate in the reaction-limited region. Therefore, the control of the wafer temperature is crucial to controlling the etching amount by this method. We found that the uniform lateral etching of W was possible even in a deep trench where the F radical concentration was low.

  1. Depletion of water molecules during ethanol wet-bonding with etch and rinse dental adhesives

    Energy Technology Data Exchange (ETDEWEB)

    Gregoire, Genevieve, E-mail: gregoire@cict.fr [Department of Biomaterials, Faculty of Odontology, University Toulouse III, 31062, Toulouse (France); Sharrock, Patrick [Medical and Spatial Imaging Laboratory, University Toulouse III, Ave. Pompidou, 81104, Castres (France); Delannee, Mathieu [Department of Biomaterials, Faculty of Odontology, University Toulouse III, 31062, Toulouse (France); Delisle, Marie-Bernadette [Faculty of Medicine, University Toulouse III, 31062, Toulouse (France)

    2013-01-01

    The treatment of demineralized dentin with ethanol has been proposed as a way to improve hydrophobic monomer penetration into otherwise water saturated collagen fibrils. The ethanol rinse is expected to preserve the fibrils from collapsing while optimizing resin constituent infiltration for better long term adhesion. The physico-chemical investigations of demineralized dentin confirmed objectively these working hypotheses. Namely, Differential Scanning Calorimetry (DSC) measurements of the melting point of water molecules pointed to the presence of free and bound water states. Unfreezable water was the main type of water remaining following a rinsing step with absolute ethanol. Two different liquid water phases were also observed by Magic Angle Spinning (MAS) solid state Nuclear magnetic Resonance (NMR) spectroscopy. Infrared spectra of ethanol treated specimens illustrated differences with the fully hydrated specimens concerning the polar carbonyl vibrations. Optical microscopy observations as well as scanning electron microscopy showed an improved dentin-adhesive interface with ethanol wet bonding. The results indicate that water can be confined to strongly bound structural molecules when excess water is removed with ethanol prior to adhesive application. This should preserve collagen from hydrolysis upon aging of the hybrid layer. - Highlights: Black-Right-Pointing-Pointer Non-freezable water exists in demineralized dentine. Black-Right-Pointing-Pointer Free water can be removed by ethanol rinse of the demineralized collagen. Black-Right-Pointing-Pointer Ethanol wet bonding leads to a homogeneous hybrid layer free of defects.

  2. Laser-induced backside wet etching of silica glass with ns-pulsed DPSS UV laser at the repetition rate of 40 kHz

    Energy Technology Data Exchange (ETDEWEB)

    Niino, Hiroyuki; Kawaguchi, Yoshizo; Sato, Tadatake; Narazaki, Aiko; Gumpenberger, Thomas; Kurosaki, Ryozo [Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, Higashi, Tsukuba, Ibaraki 305-8565 (Japan)

    2007-04-15

    Surface micro-structuring of silica glass plates was performed by using laser- induced backside wet etching (LIBWE) upon irradiation with a single-mode laser beam from a diode-pumped solid-state (DPSS) UV laser with 40 kHz repetition rate at 266 nm. We have succeeded in a well-defined micro-pattern formation without debris and microcrack generation around the etched area on the basis of a galvanometer scanning system for the laser beam. Bubble dynamics after liquid ablation was monitored by impulse pressure detection with a fast- response piezoelectric pressure gauge.

  3. Eliminating Sidewall Damage During Etch Process for Ultra Low-k Film

    Science.gov (United States)

    Badam, Ramana Murthy; Mukherjee-Roy, Moitreyee; Shaoyu, Wu; Naman, Ananth

    2004-11-01

    There is a growing concern over the side wall damage caused by plasma etching in low-k interconnect process development. The extended vertical irregularities termed as “striations” is one such plasma damage resulting in a very rough surface on trench side walls. In the present work, mechanism of striation formation was studied in the trench etching process of ultra low-k (ULK) “spin-on type” film in Cu/ULK interconnects for 130 nm technology node. Reactive ion etch process was carried out to form trenches in the ultra low-k film capped with a dual hard mask deposited by chemical vapor deposition (CVD) technique. The ultra low-k film thickness was 5000 Å and critical dimension target of trench was 180 nm. Very obvious trench side wall striations were seen after etching the trenches with the conventional etch chemistry containing C4F8/CO gas mixture and stripping with O2 gas. An alternate method using different etch chemistry containing CHF3 gas mixture was proposed which greatly minimized the side wall striations. The mechanism of striation formation on trench side walls and successful elimination by modified etch process was studied and correlation of results was obtained through surface roughness measurements on blanket film. The alternate method of etching provided valuable solutions to trench etch of ultra low-k material. Several advantages evolved from this method of etching will also be discussed in this paper.

  4. Implementation and evaluation of the Level Set method: Towards efficient and accurate simulation of wet etching for microengineering applications

    Science.gov (United States)

    Montoliu, C.; Ferrando, N.; Gosálvez, M. A.; Cerdá, J.; Colom, R. J.

    2013-10-01

    The use of atomistic methods, such as the Continuous Cellular Automaton (CCA), is currently regarded as a computationally efficient and experimentally accurate approach for the simulation of anisotropic etching of various substrates in the manufacture of Micro-electro-mechanical Systems (MEMS). However, when the features of the chemical process are modified, a time-consuming calibration process needs to be used to transform the new macroscopic etch rates into a corresponding set of atomistic rates. Furthermore, changing the substrate requires a labor-intensive effort to reclassify most atomistic neighborhoods. In this context, the Level Set (LS) method provides an alternative approach where the macroscopic forces affecting the front evolution are directly applied at the discrete level, thus avoiding the need for reclassification and/or calibration. Correspondingly, we present a fully-operational Sparse Field Method (SFM) implementation of the LS approach, discussing in detail the algorithm and providing a thorough characterization of the computational cost and simulation accuracy, including a comparison to the performance by the most recent CCA model. We conclude that the SFM implementation achieves similar accuracy as the CCA method with less fluctuations in the etch front and requiring roughly 4 times less memory. Although SFM can be up to 2 times slower than CCA for the simulation of anisotropic etchants, it can also be up to 10 times faster than CCA for isotropic etchants. In addition, we present a parallel, GPU-based implementation (gSFM) and compare it to an optimized, multicore CPU version (cSFM), demonstrating that the SFM algorithm can be successfully parallelized and the simulation times consequently reduced, while keeping the accuracy of the simulations. Although modern multicore CPUs provide an acceptable option, the massively parallel architecture of modern GPUs is more suitable, as reflected by computational times for gSFM up to 7.4 times faster than

  5. Deep Wet Etching in Hydrofluoric Acid, Nitric Acid, and Acetic Acid of Cavities in a Silicon Wafer

    Science.gov (United States)

    Yifan, Zhou; Sihai, Chen; Edmond, Samson; Bosseboeuf, Alain

    2013-07-01

    This paper reports an experimental investigation of deep isotropic etching in HF:HNO3:CH3COOH solution for the fabrication of large microcavities in a silicon wafer. The effects of different practical parameters, e.g., back protective layer, etch window diameter and agitation method, are evaluated experimentally and then discussed. Results show that, for the conditions used, the back protective layer has little influence on the etched depth. Experimental etched profiles are in agreement with the mathematical model of Kuiken's assuming a purely diffusion-controlled etching. Vertical anisotropy and asymmetry of etched profiles were observed. A 100 µm deep hemispherical microcavity was obtained for a 60 min etching with magnetic agitation at room temperature.

  6. Tall FIN formation for FINFET devices of 20nm and beyond using multi-cycles of passivation and etch processes

    Science.gov (United States)

    Choi, Dae-han; Yang, Dae Geun; Khanna, Puneet; Maeng, Chang; Hu, Owen; Shen, Hongliang; Wei, Andy; Kim, Sung

    2013-03-01

    In the past a few years, there has been a trend that non-planar field effect transistors (FETs) replace planar counterparts in semiconductor industry. One of critical and challenging processes to fabricate this non-planar device in bulk Si wafers is forming the array of tall Si fins with tight pitch that is used for gate channel as well as source and drain. Fin formation process typically involves deep Si etch using hard mask formed by double patterning technique (DPT). Traditional Si etch tends to results in intra-cell depth loading due to pitch walking and necking profile at the top portion of fins due to deep Si etch at small space. In addition, tall fins tend to stick to each other after post etch wet clean due to surface tension and hydrophilic fin sidewall. In this publication, 200nm tall fins with straight profile at the significant top portion of fins are demonstrated by using multi cycles of passivation and etch process. Physical and chemical parameters of each cycle were tuned respectively to generate straight top profile for gate channel control and smooth bottom profile to make it friendly for the following oxide gap fill process. Intra-cell and iso-dense depth loading is less than 3% of total depth. In addition, fin sticking is no longer observed after this multi cycle process. The exact mechanism is still under investigation but it is postulated that the fin sidewall surface condition has changed to be less hydrophilic due to multi cycle passivation.

  7. Cost Reduction of IMM Solar Cells by Recycling Substrates using Wet Chemical Etching Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This program focuses on reducing the cost of substrate reclaim for high-efficiency solar cells fabricated via an epitaxial lift-off (ELO) process, while increasing...

  8. Cost Reduction of IMM Solar Cells by Recycling Substrates Using Wet Chemical Etching Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The goal of the program is to reduce the cost of substrate reclaim for high-efficiency solar cells fabricated by an epitaxial lift-off (ELO) process, and to increase...

  9. Study of polycaprolactone wet electrospinning process

    Directory of Open Access Journals (Sweden)

    E. Kostakova

    2014-08-01

    Full Text Available Wet electrospinning is a useful method for 3-dimensional structure control of nanofibrous materials. This innovative technology uses a liquid collector instead of the metal one commonly used for standard electrospinning. The article compares the internal structural features of polycaprolactone (PCL nanofibrous materials prepared by both technologies. We analyze the influence of different water/ethanol compositions used as a liquid collector on the morphology of the resultant polycaprolactone nanofibrous materials. Scanning electron micro-photographs have revealed a bimodal structure in the wet electrospun materials composed of micro and nanofibers uniformly distributed across the sample bulk. We have shown that the full-faced, twofold fiber distribution is due to the solvent composition and is induced and enhanced by increasing the ethanol weight ratio. Moreover, the comparison of fibrous layers morphology obtained by wet and dry spinning have revealed that beads that frequently appeared in dry spun materials are created by Plateau-Rayleigh instability of the fraction of thicker fibers. Theoretical conditions for spontaneous and complete immersion of cylindrical fibers into a liquid collector are also derived here.

  10. Real-Time Observation of Carbon Nanotube Etching Process Using Polarized Optical Microscope.

    Science.gov (United States)

    Zhao, Qiuchen; Yao, Fengrui; Wang, Zequn; Deng, Shibin; Tong, Lianming; Liu, Kaihui; Zhang, Jin

    2017-08-01

    Controllable synthesis of carbon nanotubes (CNTs) is of great importance in its further application, which attracts broad attention. As growth and etching are the two sides in the process of material crystallography and the control of the competition between them forms the foundation for modern technology of materials design and manufacture, the understanding on etching process of carbon nanotubes is still very unclear because technically it is of great challenge to characterize the dynamics in such small one-dimensional (1D) scale. Here the real-time investigation on the etching process of CNTs is reported, by the hot-wall chemical reactor equipped with a polarized optical microscope. It is discovered that the CNT etching behavior in air is totally of random, including the etching sites, termination sites, and structure dependence. Combining with the dynamic simulation, it is revealed that the random behavior reflects the unique "self-termination" phenomenon. A structure-independent etching propagation barrier of 2.4 eV is also obtained, which indicates that the etching propagation process still follows the conventional Kinetic Wulff construction theory. The results represent the new knowledge on the etching process in carbon nanotube and can contribute to its selective enrichment. Furthermore, the "self-termination" phenomenon may be a universal behavior in 1D process. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Geometric characteristics of silicon cavities etched in EDP

    Science.gov (United States)

    Ju, Hui; Ohta, Takayuki; Ito, Masafumi; Sasaki, Minoru; Hane, Kazuhiro; Hori, Masaru

    2007-05-01

    Etching characteristics of hexagonal and triangular cavities on a lang1 1 1rang-oriented silicon wafer in the etchant of ethylene diamine, pyrocatechol and water (EDP/EPW) were investigated. The patterns are aligned to keep the sides perpendicular to lang1 1 0rang crystal orientations, in order that the sidewalls of cavities are parallel to {1 1 0} crystalline planes. RIE-ICP etching is used to define the depth of the triangular and hexagonal cavities, and EDP etching is followed for different etching times. The final self-etch-stop profiles of cavities are determined by the dimension of mask patterns and the depth of cavities in the wafer. The etching process of the hexagon and triangle cavities is modeled, based on the crystal structure and wet etching principle. The results of etched cavities confirm the condition to determine the final etching profiles.

  12. Similarity Ratio Analysis for Early Stage Fault Detection with Optical Emission Spectrometer in Plasma Etching Process: e95679

    National Research Council Canada - National Science Library

    Jie Yang; Conor McArdle; Stephen Daniels

    2014-01-01

    ...) in plasma etching processes using real-time Optical Emission Spectrometer (OES) data as input. The SRA method can help to realise a highly precise control system by detecting abnormal etch-rate faults in real-time during an etching process...

  13. Investigation of Cl2 etch in view of extremely low temperature selective epitaxial processes

    Science.gov (United States)

    Hikavyy, Andriy; Kruv, Anastasiia; Van Opstal, Tinneke; De Vos, Brecht; Porret, Clement; Loo, Roger

    2017-11-01

    A Cl2 etch of different group IV materials in a low temperature range (260–600 °C) is presented. It is shown that in general the Cl2 etching behavior is very similar to that of HCl: Si is etched slowest, Ge fastest with SiGe being between these two cases. Activation energies for Cl2 etching of Si, SiGe and Ge are very low and show that neither Cl nor H surface passivation are limiting factors for the etch. The etching rate is strongly affected by the choice of the carrier gas (He, H2 and N2) and by the process pressure which gives high flexibility for its application. As compared to HCl, Cl2 allows decreasing of the etching process temperatures down to ∼400 °C for Si and ∼250 °C for Ge. Although it is not clear if co-flow selective processes are visible due to possible exothermic chain reaction of radicals in the presence of group IV hydrides, cyclic approaches can be relatively easily achieved at temperatures below 500 °C.

  14. Dry phosphorus silicate glass etching for multicrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Nositschka, W.A.; Voigt, O.; Kurz, H. [Aachen Univ. (Germany). Inst. of Semiconductor Electronics; Kenanoglu, A.; Borchert, D. [Fraunhofer Inst. for Solar Energy Systems, Gelsenkirchen (Germany)

    2003-07-01

    A dry plasma etching process for phosphorus silicate glass (PSG) in a SiN-PECVD batch reactor is developed. In the same reactor PSG etching and anti-reflective coating (ARC) can be performed successively. To demonstrate industrial feasibility, screen-printed solar cells are manufactured and compared with cells prepared by a standard wet chemical process. (Author)

  15. Design of experiment characterization of microneedle fabrication processes based on dry silicon etching

    Science.gov (United States)

    Held, J.; Gaspar, J.; Ruther, P.; Hagner, M.; Cismak, A.; Heilmann, A.; Paul, O.

    2010-02-01

    This paper reports on the characterization of dry etching-based processes for the fabrication of silicon microneedles using a design of experiment (DoE) approach. The possibility of using such microneedles as protruding microelectrodes able to electroporate adherently growing cells and record intracellular potentials motivates the systematic analysis of the influence of etching parameters on the needle shape. Two processes are characterized: a fully isotropic etch process and a three-step etching approach. In the first case, the shape of the microneedles is defined by a single etch step. For the stepped method, the structures are realized using the following sequence: a first, isotropic step defines the tip; this is followed by anisotropic etching that increases the height of the needle; a final isotropic procedure thins the microneedle and sharpens its tip. From the various process parameters tested, it is concluded that the isotropic fabrication is influenced mostly by four process parameters, whereas six parameters dominantly govern the outcome of the stepped etching technique. The dependence of the needle shape on the etch mask diameter is also investigated. Microneedles with diameters down to the sub-micrometer range and heights below 10 µm are obtained. The experimental design is performed using the D-optimal method. The resulting geometry, i.e. heights, diameters and radii of curvature measured at different positions, is extracted from scanning electron micrographs of needle cross-sections obtained from cuts by focused ion beam. The process parameters are used as inputs and the geometry features of the microneedles as outputs for the analysis of the process.

  16. ALD synthesis of platinum nanoparticles on single-crystal SrTiO3 pretreated with wet chemical etching

    Science.gov (United States)

    Wang, Chuandao; Koirala, Pratik; Stair, Peter; Marks, Laurence

    2017-11-01

    Formic acid-hydrogen peroxide and buffered hydrogen fluoride-hydrogen peroxide solutions were used to etch single-crystal strontium titanate to remove carbon contamination and increase hydroxyl group density to improve atomic layer deposition onto these materials. X-ray photoelectron spectroscopy indicated that both are effective for carbon contamination removal. However, for increasing hydroxyl group density on the strontium titanate surface, the buffered hydrogen fluoride-hydrogen peroxide is more effective. Transmission electron microscopy and x-ray photoemission show enhanced platinum deposition on the etched strontium titanate surface. These results provide the basis for optimizing atomic layer deposition for other technologically relevant materials.

  17. Control of oxidation on NiSi {sub x} during etching and ashing processes

    Energy Technology Data Exchange (ETDEWEB)

    Sakamori, S. [Process Development Department, Process Technology Development Div., Renesas Technology Corp., 4-1, Mizuhara, Itami-shi, Hyogo 664-0005 (Japan)]. E-mail: sakamori.shigenori@renesas.com; Yonekura, K. [Process Development Department, Process Technology Development Div., Renesas Technology Corp., 4-1, Mizuhara, Itami-shi, Hyogo 664-0005 (Japan); Fujiwara, N. [Process Development Department, Process Technology Development Div., Renesas Technology Corp., 4-1, Mizuhara, Itami-shi, Hyogo 664-0005 (Japan); Kosaka, T. [ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 19, Nishikujo-kasuga-cho, Minami-ku, Kyoto 601-8413 (Japan); Ohkuni, M. [ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 19, Nishikujo-kasuga-cho, Minami-ku, Kyoto 601-8413 (Japan); Tateiwa, K. [ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 19, Nishikujo-kasuga-cho, Minami-ku, Kyoto 601-8413 (Japan)

    2007-04-23

    The oxidation on nickel silicide (NiSi {sub x}) during plasma etching and oxygen ashing is investigated for stable contact resistance on NiSi {sub x}. NiSi {sub x} exposed by various processes is observed by X-ray photoelectron spectroscopy. The oxidation on NiSi {sub x} is promoted by the fluorine that remains during etching and the oxide thickness on n {sup +} NiSi {sub x} is greater than that on p {sup +} NiSi {sub x}. The remaining fluorine after etching can be decreased by in-situ nitrogen plasma treatment during the post-etching process. Therefore, the oxidation progress with exposure to air and the difference in oxidation on NiSi {sub x} between n {sup +} and p {sup +} can be suppressed.

  18. Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices

    Energy Technology Data Exchange (ETDEWEB)

    Pal, Atindra Nath; Müller, Susanne; Ihn, Thomas; Ensslin, Klaus; Tschirky, Thomas; Charpentier, Christophe; Wegscheider, Werner [Solid State Physics Laboratory, ETH Zürich - 8093 Zürich (Switzerland)

    2015-07-15

    We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic width of the etched structures was determined from the low field magneto-resistance peak, a characteristic signature of partially diffusive boundary scattering in the ballistic limit. In case of dry-etching the electronic width was found to decrease with electron density. In contrast, for wet etched devices it stayed constant with density. Moreover, the boundary scattering was found to be more specular for wet-etched devices, which may be relevant for studying topological edge states.

  19. Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices

    Directory of Open Access Journals (Sweden)

    Atindra Nath Pal

    2015-07-01

    Full Text Available We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic width of the etched structures was determined from the low field magneto-resistance peak, a characteristic signature of partially diffusive boundary scattering in the ballistic limit. In case of dry-etching the electronic width was found to decrease with electron density. In contrast, for wet etched devices it stayed constant with density. Moreover, the boundary scattering was found to be more specular for wet-etched devices, which may be relevant for studying topological edge states.

  20. A new versatile electrochemical etching chamber (VECEC) system for multi-size and multi-shape detector processing

    CERN Document Server

    Sohrabi, M

    1999-01-01

    A new versatile electrochemical etching ECE chamber (VECE) system is introduced in which the effective electrochemically etched area can have variable sizes and/or shapes required using templet etching. The flat rubber washers act as templets and holders of the etchant, and control the size and shape of the effective etched area of the detector which can be of various shapes and sizes desired. The system was operated in two operation modes A and B in which the both sides and one side of the detector were etched respectively. Detectors with etched areas having diameters from 1 to 18 cm have also been successfully etched by this system. Multi-chambers have been also designed using this principle for larger-scale multi-detector processing. The effects of etching area and time on the current through the detector have also been studied.

  1. Etching quartz with inductively coupled plasma etching equipment

    Science.gov (United States)

    Wu, Xuming; Zhou, Changhe; Xi, Peng; Dai, Enwen; Ru, Huayi; Liu, Liren

    2003-11-01

    Inductively Coupled Plasma (ICP)can achieve high density plasma in low pressure,so it has a number of significant advantages such as improved etching rates,better profile control,improved uniformity, greatly increased selectivity and a dramatic reduction in radiation damage and contamination. In optics,quartz is an ideal optical material with transmitting spectral range from deep ultraviolet to far infrared.So we systematically studied the etching characteristics of quartz by using a Inductively Coupled Plasma (ICP)etching system.In the xperim nts,the gas was the mixture of CHF3,O2 and Ar,and the chamber pressure was about 10 mTorr.Th influences of gas flow rate and the power of the radio frequency on etching rate were optimized. The uniformity and repeatability of the etching technology were also studied. After residue mask material was removed by wet chemical solution, no polymer was observed on the surfaces of samples,and the surfaces of the fabricated quartz elements were smooth and clean. The optimized etching process is important for the fabrication of micro-optical lements based on quartz. Using this etching process, many gratings such as Dammann grating, rectangular groove grating, and optical disk grating can be fabricated successfully.

  2. Study of etching processes in the GEM detectors

    CERN Document Server

    Zavazieva, Darina

    2016-01-01

    Gaseous Electron Multiplier (GEM) detectors are known to operate stably at high gains and high particle fluxes. Though, at very high gains and fluxes it was observed that the insulating polyimide layer between the GEM electrodes gets etched, changing the original shape of the hole, and therefore varying the gain and the energy resolution of the detector. The idea of the project to observe degradation effect of the GEM foils during the Triple GEM detector operation in extreme conditions under X-ray radiation.

  3. Biodiesel production from wet microalgae feedstock using sequential wet extraction/transesterification and direct transesterification processes.

    Science.gov (United States)

    Chen, Ching-Lung; Huang, Chien-Chang; Ho, Kao-Chia; Hsiao, Ping-Xuan; Wu, Meng-Shan; Chang, Jo-Shu

    2015-10-01

    Although producing biodiesel from microalgae seems promising, there is still a lack of technology for the quick and cost-effective conversion of biodiesel from wet microalgae. This study was aimed to develop a novel microalgal biodiesel producing method, consisting of an open system of microwave disruption, partial dewatering (via combination of methanol treatment and low-speed centrifugation), oil extraction, and transesterification without the pre-removal of the co-solvent, using Chlamydomonas sp. JSC4 with 68.7 wt% water content as the feedstock. Direct transesterification with the disrupted wet microalgae was also conducted. The biomass content of the wet microalgae increased to 56.6 and 60.5 wt%, respectively, after microwave disruption and partial dewatering. About 96.2% oil recovery was achieved under the conditions of: extraction temperature, 45°C; hexane/methanol ratio, 3:1; extraction time, 80 min. Transesterification of the extracted oil reached 97.2% conversion within 15 min at 45°C and 6:1 solvent/methanol ratio with simultaneous Chlorophyll removal during the process. Nearly 100% biodiesel conversion was also obtained while conducting direct transesterification of the disrupted oil-bearing microalgal biomass. Copyright © 2015 Elsevier Ltd. All rights reserved.

  4. The synthesis of flexible zeolite nanofibers by a polymer surface thermal etching process

    Science.gov (United States)

    Ji, Sang Hyun; Cho, Jeong Ho; Jeong, Young Hun; Yun, Jon Do; Yun, Ji Sun

    2017-09-01

    Flexible zeolite nanofibers with high surface area were synthesized by an electrospinning method and a thermal surface partial etching process. The thermal surface partial etching temperature range for maintaining flexibility of zeolite nanofibers was investigated based on thermogravimetric analysis (TGA), and the as-spun zeolite nanofibers were thermal etched at a temperature range from 250 °C to 450 °C. Field emission scanning electron microscope (FE-SEM) and atomic force microscope (AFM) images clearly showed that the polymer surface of the nanofibers was partially etched, and zeolite particles were exposed on the surface of the nanofibers. X-ray diffraction (XRD) results confirmed that a phase change did not occur in the zeolite nanofibers with a thermal etching process. The specific surface area characteristics were analyzed by N2 adsorption/desorption isotherms, and the thermal surface etched zeolite nanofibers at 400 °C had a specific surface area of 816 m2/g similar to the value of zeolite powders.

  5. A novel methodology for litho-to-etch pattern fidelity correction for SADP process

    Science.gov (United States)

    Chen, Shr-Jia; Chang, Yu-Cheng; Lin, Arthur; Chang, Yi-Shiang; Lin, Chia-Chi; Lai, Jun-Cheng

    2017-03-01

    For 2x nm node semiconductor devices and beyond, more aggressive resolution enhancement techniques (RETs) such as source-mask co-optimization (SMO), litho-etch-litho-etch (LELE) and self-aligned double patterning (SADP) are utilized for the low k1 factor lithography processes. In the SADP process, the pattern fidelity is extremely critical since a slight photoresist (PR) top-loss or profile roughness may impact the later core trim process, due to its sensitivity to environment. During the subsequent sidewall formation and core removal processes, the core trim profile weakness may worsen and induces serious defects that affect the final electrical performance. To predict PR top-loss, a rigorous lithography simulation can provide a reference to modify mask layouts; but it takes a much longer run time and is not capable of full-field mask data preparation. In this paper, we first brought out an algorithm which utilizes multi-intensity levels from conventional aerial image simulation to assess the physical profile through lithography to core trim etching steps. Subsequently, a novel correction method was utilized to improve the post-etch pattern fidelity without the litho. process window suffering. The results not only matched PR top-loss in rigorous lithography simulation, but also agreed with post-etch wafer data. Furthermore, this methodology can also be incorporated with OPC and post-OPC verification to improve core trim profile and final pattern fidelity at an early stage.

  6. Wet Mechanochemical Processing of Celestine using (NH42CO3

    Directory of Open Access Journals (Sweden)

    Deniz Bingöl

    2017-06-01

    Full Text Available In this study, traditional (univariate method of processing to the wet mechanochemical treatment were applied to obtain both SrCO3 and (NH42SO4 from celestite (SrSO4-(NH42CO3-H2O mixtures in a planetary ball mill. X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, and chemical analysis were used to analyze products formed during wet milling. A hydrometallurgical process was carried out to examine milling time, ball to grinding material mass ratio, (NH42CO3 to SrSO4 mole ratio and rotational speed of the mill in a planetary mill. Under optimum conditions, a conversion approaching 100% of SrCO3 was obtained.

  7. Metal mask free dry-etching process for integrated optical devices applying highly photostabilized resist.

    NARCIS (Netherlands)

    Sengo, G.; Sengo, G.; van Wolferen, Hendricus A.G.M.; Worhoff, Kerstin; Driessen, A.; Koonen, A.M.J.; Leijtens, X.J.M.; van den Boom, H.P.A.; Verdurmen, E.J.M.; Molina Vazquez, J.

    2006-01-01

    Photostabilization is a widely used post lithographic resist treatment process, which allows to harden the resist profile in order to maintain critical dimensions and to increase selectivity in subsequent process steps such as reactive ion etching. In this paper we present the optimization of deep

  8. Optimized Deep UV hardbake process for metal-free dry-etching of integrated optical devices

    NARCIS (Netherlands)

    Sengo, G.; Sengo, G.; van Wolferen, Hendricus A.G.M.; Worhoff, Kerstin; Driessen, A.

    Photostabilization is a widely used post lithographic resist treatment process, which allows hardening the resist profile in order to maintain critical dimensions and to increase selectivity in subsequent process steps such as reactive ion etching. In this paper we present the optimization of Deep

  9. Development studies of a novel wet oxidation process

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, T.W.; Dhooge, P.M. [Delphi Research, Inc., Albuquerque, NM (United States)

    1995-10-01

    Many DOE waste streams and remediates contain complex and variable mixtures of organic compounds, toxic metals, and radionuclides. These materials are often dispersed in organic or inorganic matrices, such as personal protective equipment, various sludges, soils, and water. Incineration and similar combustive processes do not appear to be viable options for treatment of these waste streams due to various considerations. The objective of this project is to develop a novel catalytic wet oxidation process for the treatment of multi-component wastes. The DETOX process uses a unique combination of metal catalysts to increase the rate of oxidation of organic materials.

  10. HF-based etching processes for improving laser damage resistance of fused silica optical surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Suratwala, T I; Miller, P E; Bude, J D; Steele, R A; Shen, N; Monticelli, M V; Feit, M D; Laurence, T A; Norton, M A; Carr, C W; Wong, L L

    2010-02-23

    The effect of various HF-based etching processes on the laser damage resistance of scratched fused silica surfaces has been investigated. Conventionally polished and subsequently scratched fused silica plates were treated by submerging in various HF-based etchants (HF or NH{sub 4}F:HF at various ratios and concentrations) under different process conditions (e.g., agitation frequencies, etch times, rinse conditions, and environmental cleanliness). Subsequently, the laser damage resistance (at 351 or 355 nm) of the treated surface was measured. The laser damage resistance was found to be strongly process dependent and scaled inversely with scratch width. The etching process was optimized to remove or prevent the presence of identified precursors (chemical impurities, fracture surfaces, and silica-based redeposit) known to lead to laser damage initiation. The redeposit precursor was reduced (and hence the damage threshold was increased) by: (1) increasing the SiF{sub 6}{sup 2-} solubility through reduction in the NH4F concentration and impurity cation impurities, and (2) improving the mass transport of reaction product (SiF{sub 6}{sup 2-}) (using high frequency ultrasonic agitation and excessive spray rinsing) away from the etched surface. A 2D finite element crack-etching and rinsing mass transport model (incorporating diffusion and advection) was used to predict reaction product concentration. The predictions are consistent with the experimentally observed process trends. The laser damage thresholds also increased with etched amount (up to {approx}30 {micro}m), which has been attributed to: (1) etching through lateral cracks where there is poor acid penetration, and (2) increasing the crack opening resulting in increased mass transport rates. With the optimized etch process, laser damage resistance increased dramatically; the average threshold fluence for damage initiation for 30 {micro}m wide scratches increased from 7 to 41 J/cm{sup 2}, and the statistical

  11. X-ray diffraction gratings: Precise control of ultra-low blaze angle via anisotropic wet etching

    Energy Technology Data Exchange (ETDEWEB)

    Voronov, Dmitriy L.; Naulleau, Patrick; Gullikson, Eric M.; Fedorov, Alexei V.; Padmore, Howard A. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Lum, Paul [University of California, Berkeley, California 94720 (United States)

    2016-07-25

    Diffraction gratings are used from micron to nanometer wavelengths as dispersing elements in optical instruments. At shorter wavelengths, crystals can be used as diffracting elements, but due to the 3D nature of the interaction with light are wavelength selective rather than wavelength dispersing. There is an urgent need to extend grating technology into the x-ray domain of wavelengths from 1 to 0.1 nm, but this requires the use of gratings that have a faceted surface in which the facet angles are very small, typically less than 1°. Small facet angles are also required in the extreme ultra-violet and soft x-ray energy ranges in free electron laser applications, in order to reduce power density below a critical damage threshold. In this work, we demonstrate a technique based on anisotropic etching of silicon designed to produce very small angle facets with a high degree of perfection.

  12. A history of engraving and etching techniques: developments of manual intaglio printmaking processes, 1400-2000

    NARCIS (Netherlands)

    Stijnman, A.C.J.

    2012-01-01

    This book surveys the history of the techniques of engraving, etching and plate printing - i.e. that of manual intaglio printmaking processes - from its beginning in the 1430s until today. These developments are observed in the light of the coherence between the technique of the intaglio print (such

  13. Fabrication of 3D Si based Photonic Crystal Structure with Single Self Aligned Etching Process

    Science.gov (United States)

    2010-09-01

    penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR...our modified Bosch etch process. 1 Chang-Hasnain, C. J. Tunable VCSEL Using High Contrast Grating...can be monolithically integrated with semiconductor components. Currently , optical fiber cannot be monolithically integrated with semiconductor

  14. A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2 and SF6/O2

    Directory of Open Access Journals (Sweden)

    Seon-Geun Oh

    2014-01-01

    Full Text Available The characteristics of the dry etching of SiNx:H thin films for display devices using SF6/O2 and NF3/O2 were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE system. The investigation was carried out by varying the RF power ratio (13.56 MHz/2 MHz, pressure, and gas flow ratio. For the SiNx:H film, the etch rates obtained using NF3/O2 were higher than those obtained using SF6/O2 under various process conditions. The relationships between the etch rates and the usual monitoring parameters—the optical emission spectroscopy (OES intensity of atomic fluorine (685.1 nm and 702.89 nm and the voltages VH and VL—were investigated. The OES intensity data indicated a correlation between the bulk plasma density and the atomic fluorine density. The etch rate was proportional to the product of the OES intensity of atomic fluorine (I(F and the square root of the voltages (Vh+Vl on the assumption that the velocity of the reactive fluorine was proportional to the square root of the voltages.

  15. Process of forming catalytic surfaces for wet oxidation reactions

    Science.gov (United States)

    Jagow, R. B. (Inventor)

    1977-01-01

    A wet oxidation process was developed for oxidizing waste materials, comprising dissolved ruthenium salt in a reactant feed stream containing the waste materials. The feed stream is introduced into a reactor, and the reactor contents are then raised to an elevated temperature to effect deposition of a catalytic surface of ruthenium black on the interior walls of the reactor. The feed stream is then maintained in the reactor for a period of time sufficient to effect at least partial oxidation of the waste materials.

  16. Similarity ratio analysis for early stage fault detection with optical emission spectrometer in plasma etching process.

    Directory of Open Access Journals (Sweden)

    Jie Yang

    Full Text Available A Similarity Ratio Analysis (SRA method is proposed for early-stage Fault Detection (FD in plasma etching processes using real-time Optical Emission Spectrometer (OES data as input. The SRA method can help to realise a highly precise control system by detecting abnormal etch-rate faults in real-time during an etching process. The method processes spectrum scans at successive time points and uses a windowing mechanism over the time series to alleviate problems with timing uncertainties due to process shift from one process run to another. A SRA library is first built to capture features of a healthy etching process. By comparing with the SRA library, a Similarity Ratio (SR statistic is then calculated for each spectrum scan as the monitored process progresses. A fault detection mechanism, named 3-Warning-1-Alarm (3W1A, takes the SR values as inputs and triggers a system alarm when certain conditions are satisfied. This design reduces the chance of false alarm, and provides a reliable fault reporting service. The SRA method is demonstrated on a real semiconductor manufacturing dataset. The effectiveness of SRA-based fault detection is evaluated using a time-series SR test and also using a post-process SR test. The time-series SR provides an early-stage fault detection service, so less energy and materials will be wasted by faulty processing. The post-process SR provides a fault detection service with higher reliability than the time-series SR, but with fault testing conducted only after each process run completes.

  17. Dust emission from wet, low-emission coke quenching process

    Science.gov (United States)

    Komosiński, Bogusław; Bobik, Bartłomiej; Konieczny, Tomasz; Cieślik, Ewelina

    2018-01-01

    Coke plants, which produce various types of coke (metallurgical, foundry or heating), at temperatures between 600 and 1200°C, with limited access to oxygen, are major emitters of particulates and gaseous pollutants to air, water and soils. Primarily, the process of wet quenching should be mentioned, as one of the most cumbersome. Atmospheric pollutants include particulates, tar substances, organic pollutants including B(a)P and many others. Pollutants are also formed from the decomposition of water used to quench coke (CO, phenol, HCN, H2S, NH3, cresol) and decomposition of hot coke in the first phase of quenching (CO, H2S, SO2) [1]. The development of the coke oven technology has resulted in the changes made to different types of technological installations, such as the use of baffles in quench towers, the removal of nitrogen oxides by selective NOx reduction, and the introduction of fabric filters for particulates removal. The BAT conclusions for coke plants [2] provide a methodology for the measurement of particulate emission from a wet, low-emission technology using Mohrhauer probes. The conclusions define the emission level for wet quenching process as 25 g/Mgcoke. The conducted research was aimed at verification of the presented method. For two of three quench towers (A and C) the requirements included in the BAT conclusions are not met and emissions amount to 87.34 and 61.35 g/Mgcoke respectively. The lowest particulates emission was recorded on the quench tower B and amounted to 22.5 g/Mgcoke, therefore not exceeding the requirements.

  18. Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Fabrication

    Science.gov (United States)

    Yongxun Liu,; Takahiro Kamei,; Kazuhiko Endo,; Shinichi O'uchi,; Junichi Tsukada,; Hiromi Yamauchi,; Tetsuro Hayashida,; Yuki Ishikawa,; Takashi Matsukawa,; Kunihiro Sakamoto,; Atsushi Ogura,; Meishoku Masahara,

    2010-06-01

    The nanoscale wet etching of physical-vapor-deposited (PVD) titanium nitride (TiN) and its application to sub-30-nm-gate-length fin-type double-gate metal-oxide-semiconductor field-effect transistor (FinFET) fabrication are systematically investigated. It is experimentally found that PVD-TiN side-etching depth can be controlled to be one-half of PVD-TiN thickness with precise time control using an ammonium hydroxide (NH4OH) : hydrogen peroxide (H2O2) : deionized water (H2O) = 1 : 2 : 5 solution at 60 °C. Using the developed nanoscale PVD-TiN wet etching technique, sub-30-nm-physical-gate-length FinFETs, 100-nm-tall fin-channel complementary MOS (CMOS) inverters and static random access memory (SRAM) half-cells have successfully been fabricated and demonstrated. These experimental results indicate that the developed nanoscale PVD-TiN wet etching technique is very useful for tall fin-channel CMOS fabrication.

  19. An Analysis and Research on the Transmission Ratio of Dye Sensitized Solar Cell Photoelectrodes by Using Different Etching Process

    Directory of Open Access Journals (Sweden)

    Chin-Guo Kuo

    2013-01-01

    Full Text Available Classical photoelectrodes for Dye Sensitized Solar Cells (DSSCs were fabricated by using the electrochemical method on the titanium (Ti template, for that the fabrication process would influence the characteristics of the DSSCs. In this study, at first three different methods were used to etch Ti templates from 10 to 17 min, (1 polishing-chemical etching: Ti template was annealed at 450°C for 1 h, abraded using number 80 to 1500 SiC sheet, and then etched in a solution of 5% HF + 95% H2O; (2 electrochemical polishing-chemical etching: Ti template was annealed at 450°C for 1 h, electrolytic polishing with 42% CH3OH + 5% HClO4 + 53% HOCH2CH2OC4H9 solution, and the chemical-etching in a solution of 5% HF + 95% H2O; (3 chemical etching: Ti template was etched in a solution of 5% HF + 95% H2O and annealed at 450°C for 1 h. When the etching time was changed from 10 to 17 min, the thicknesses of Ti templates decreased from 75.3 μm to 14.8 μm, depending on the etching method. After etching process, the TiO2 nanotube arrays were fabricated as the photoelectrode of DSSCs by electrochemical process, in which the Ti as anode and platinum (Pt as cathode. The electrolyte solution included C2H4(OH2, NH4F, and deionized water. After annealing the grown TiO2 nanotube arrays at 450°C for 3 h, we would show that the etching process had large effect on the structure and transmittance ratio of the TiO2 nanotube arrays.

  20. Dry etching of chrome for photomasks for 100-nm technology using chemically amplified resist

    Science.gov (United States)

    Mueller, Mark; Komarov, Serguie; Baik, Ki-Ho

    2002-07-01

    Photo mask etching for the 100nm technology node places new requirements on dry etching processes. As the minimum-size features on the mask, such as assist bars and optical proximity correction (OPC) patterns, shrink down to 100nm, it is necessary to produce etch CD biases of below 20nm in order to reproduce minimum resist features into chrome with good pattern fidelity. In addition, vertical profiles are necessary. In previous generations of photomask technology, footing and sidewall profile slope were tolerated, since this dry etch profile was an improvement from wet etching. However, as feature sizes shrink, it is extremely important to select etch processes which do not generate a foot, because this will affect etch linearity and also limit the smallest etched feature size. Chemically amplified resist (CAR) from TOK is patterned with a 50keV MEBES eXara e-beam writer, allowing for patterning of small features with vertical resist profiles. This resist is developed for raster scan 50 kV e-beam systems. It has high contrast, good coating characteristics, good dry etch selectivity, and high environmental stability. Chrome etch process development has been performed using Design of Experiments to optimize parameters such as sidewall profile, etch CD bias, etch CD linearity for varying sizes of line/space patterns, etch CD linearity for varying sizes of isolated lines and spaces, loading effects, and application to contact etching.

  1. Black silicon with self-cleaning surface prepared by wetting processes

    OpenAIRE

    Zhang, Ting; Zhang, Peng; Li, Shibin; Li, Wei; Wu, Zhiming; Jiang, Yadong

    2013-01-01

    This paper reports on a simple method to prepare a hydrophobic surface on black silicon, which is fabricated by metal-assisted wet etching. To increase the reaction rate, the reaction device was placed in a heat collection-constant temperature type magnetic stirrer and set at room temperature. It was demonstrated that the micro- and nanoscale spikes on the black silicon made the surface become hydrophobic. As the reaction rate increases, the surface hydrophobicity becomes more outstanding and...

  2. Dry Etching

    DEFF Research Database (Denmark)

    Stamate, Eugen; Yeom, Geun Young

    2016-01-01

    for the higher processing rates in FPDs, high-density plasma processing tools that can handle larger-area substrate uniformly are more intensively studied especially for the dry etching of polysilicon thin films. In the case of FPD processing, the current substrate size ranges from 730 × 920 mm (fourth...

  3. Challenges in the Plasma Etch Process Development in the sub-20nm Technology Nodes

    Science.gov (United States)

    Kumar, Kaushik

    2013-09-01

    For multiple generations of semiconductor technologies, RF plasmas have provided a reliable platform for critical and non-critical patterning applications. The electron temperature of processes in a RF plasma is typically several electron volts. A substantial portion of the electron population is within the energy range accessible for different types of electron collision processes, such as electron collision dissociation and dissociative electron attachment. When these electron processes occur within a small distance above the wafer, the neutral species, radicals and excited molecules, generated from these processes take part in etching reactions impacting selectivity, ARDE and micro-loading. The introduction of finFET devices at 22 nm technology node at Intel marks the transition of planar devices to 3-dimensional devices, which add to the challenges to etch process in fabricating such devices. In the sub-32 nm technology node, Back-end-of-the-line made a change with the implementation of Trench First Metal Hard Mask (TFMHM) integration scheme, which has hence gained traction and become the preferred integration of low-k materials for BEOL. This integration scheme also enables Self-Aligned Via (SAV) patterning which prevents via CD growth and confines via by line trenches to better control via to line spacing. In addition to this, lack of scaling of 193 nm Lithography and non-availability of EUV based lithography beyond concept, has placed focus on novel multiple patterning schemes. This added complexity has resulted in multiple etch schemes to enable technology scaling below 80 nm Pitches, as shown by the memory manufacturers. Double-Patterning and Quad-Patterning have become increasingly used techniques to achieve 64 nm, 56 nm and 45 nm Pitch technologies in Back-end-of-the-line. Challenges associated in the plasma etching of these multiple integration schemes will be discussed in the presentation. In collaboration with A. Ranjan, TEL Technology Center, America

  4. Power generation characteristics of tubular type SOFC by wet process

    Energy Technology Data Exchange (ETDEWEB)

    Tajiri, H.; Nakayama, T. [Kyushu Electric Power Company, Inc., Fukuoka (Japan); Kuroishi, M. [TOTO Ltd., Kanagawa (Japan)] [and others

    1996-12-31

    The development of a practical solid oxide fuel cell requires improvement of a cell performance and a cell manufacturing technology suitable for the mass production. In particular tubular type SOFC is thought to be superior in its reliability because its configuration can avoid the high temperature sealing and reduce the thermal stress resulting from the contact between cells. The authors have fabricated a tubular cell with an air electrode support by a wet processing technique, which is suitable for mass production in improving a power density. To enhance the power output of the module, the Integrated Tubular-Type (ITT) cell has been developed. This paper reports the performance of the single cells with various active anode areas and the bundle with series-connected 9-ITT cells with an active anode area of 840 cm{sup 2}.

  5. Endpoint in plasma etch process using new modified w-multivariate charts and windowed regression

    Science.gov (United States)

    Zakour, Sihem Ben; Taleb, Hassen

    2017-02-01

    Endpoint detection is very important undertaking on the side of getting a good understanding and figuring out if a plasma etching process is done in the right way, especially if the etched area is very small (0.1%). It truly is a crucial part of supplying repeatable effects in every single wafer. When the film being etched has been completely cleared, the endpoint is reached. To ensure the desired device performance on the produced integrated circuit, the high optical emission spectroscopy (OES) sensor is employed. The huge number of gathered wavelengths (profiles) is then analyzed and pre-processed using a new proposed simple algorithm named Spectra peak selection (SPS) to select the important wavelengths, then we employ wavelet analysis (WA) to enhance the performance of detection by suppressing noise and redundant information. The selected and treated OES wavelengths are then used in modified multivariate control charts (MEWMA and Hotelling) for three statistics (mean, SD and CV) and windowed polynomial regression for mean. The employ of three aforementioned statistics is motivated by controlling mean shift, variance shift and their ratio (CV) if both mean and SD are not stable. The control charts show their performance in detecting endpoint especially W-mean Hotelling chart and the worst result is given by CV statistic. As the best detection of endpoint is given by the W-Hotelling mean statistic, this statistic will be used to construct a windowed wavelet Hotelling polynomial regression. This latter can only identify the window containing endpoint phenomenon.

  6. Investigating the process of white etching crack initiation in bearing steel

    Energy Technology Data Exchange (ETDEWEB)

    Gould, Benjamin; Greco, Aaron

    2016-04-01

    White etching cracks (WECs) have been identified as a dominant mode of premature failure within wind turbine gearbox bearings. Though WECs have been reported in the field for over a decade, the conditions leading to WECs, and the process by which this failure culminates, are both highly debated. In previously published work, the generation of WECs on a benchtop scale was linked to sliding at the surface of the test sample, it was also postulated that the generation of WECs was dependent on the cumulative energy that had been applied to the sample over the entirety of the test. In this paper, a three ring on roller bench top test rig is used to systematically alter the cumulative energy that a sample experiences through changes in normal load, sliding, and run time, in an attempt to correlate cumulative energy with the formation of WECs. It was determined that, in the current test setup, the presence of WECs can be predicted by this energy criterion. The authors then used this information to study the process by which WECs initiate. Lastly, it was found that, under the current testing conditions, the formation of a dark etching microstructure precedes the formation of a crack, and a crack precedes the formation of white etching microstructure.

  7. Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching

    Science.gov (United States)

    Liu, Yongxun; Sugimata, Etsuro; Ishii, Kenichi; Masahara, Meishoku; Endo, Kazuhiko; Matsukawa, Takashi; Yamauchi, Hiromi; O'uchi, Shinichi; Suzuki, Eiichi

    2006-04-01

    We present an experimental study of effective carrier mobility ( μ eff) of multi-fin-type double-gate metal-oxide-semiconductor field-effect transistors (FinFETs) with a (111) channel surface fabricated by orientation-dependent wet etching. The peak values of the obtained μ eff of electrons and holes are approximately 300 and 160 cm2/(V s), respectively, which are close to those in (111) bulk metal-oxide-semiconductor field-effect transistors (MOSFETs). Moreover, the effective electric field (Eeff) dependence of the μ eff of electrons and holes shows a good agreement with the mobility universal curves of (111) bulk MOSFETs. These results indicate that the quality and channel surface roughness of Si-fins by orientation-dependent wet etching are excellent. The obtained results of μ eff are very useful for the modeling and design of FinFET-complementary metal-oxide-semiconductor (CMOS) circuits and the developed wet etching technique is very attractive in the fabrication of ultrathin and high-quality Si-fin channels.

  8. Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity

    Science.gov (United States)

    Zeniou, A.; Ellinas, K.; Olziersky, A.; Gogolides, E.

    2014-01-01

    Room-temperature deep Si etching using time-multiplexed deep reactive ion etching (DRIE) processes is investigated to fabricate ultra-high aspect ratio Si nanowires (SiNWs) perpendicular to the silicon substrate. Nanopatterning is achieved using either top-down techniques (e.g. electron beam lithography) or colloidal polystyrene (PS) sphere self-assembly. The latter is a faster and more economical method if imperfections in diameter and position can be tolerated. We demonstrate wire radii from below 100 nm to several micrometers, and aspect ratios (ARs) above 100:1 with etching rates above 1 μm min-1 using classical mass flow controllers with pulsing rise times of seconds. The mechanical stability of these nanowires is studied theoretically and experimentally against adhesion and capillary forces. It is shown that above ARs of the order of 50:1 for spacing 1 μm, SiNWs tend to bend due to adhesion forces between them. Such large adhesion forces are due to the high surface energy of silicon. Wetting the SiNWs with water and drying also gives rise to capillary forces. We find that capillary forces may be less important for SiNW collapse/bending compared to adhesion forces of dry SiNWs, contrary to what is observed for polymeric nanowires/nanopillars which have a much lower surface energy compared to silicon. Finally we show that SiNW arrays have oleophobic and superoleophobic properties, i.e. they exhibit excellent anti-wetting properties for a wide range of liquids and oils due to the re-entrant profile produced by the DRIE process and the well-designed spacing.

  9. The effective etch process proximity correction methodology for improving on chip CD variation in 20 nm node DRAM gate

    Science.gov (United States)

    Park, Jeong-Geun; Kim, Sang-wook; Shim, Seong-Bo; Suh, Sung-Soo; Oh, Hye-Keun

    2011-04-01

    This paper presents an effective methodology for etch PPC (Process Proximity Correction) of 20 nm node DRAM (Dynamic Random Access Memory) gate transistor. As devices shrinks, OCV(On chip CD Variation) control become more important to meet the performance goal for high speed in DRAM. The main factors which influence OCV are mask, photo, etch PPE (Process proximity effect) in DRAM gate. Model based etch PPC is required to properly correct Etch PPE as device density increases. To improve OCV in DRAM gate, we applied new type of etch loading kernel. It is called Vkernel which accounts for directional weight from the point of interest. And we optimized the etch PPC convergence by optimizing the etch PPC iteration. Because of density difference between spider mask and real gate mask, the skew difference occurs between them. We tested the effect of long range density using same real gate pattern clip by varying mask open image size from 0.5 ~ 10 mm. The ADI CD difference was on average in the order on 2 nm for varying mask open image size. But the ACI CD difference (the average of CD range by varying open image size) was very noticeable (about 15 nm). This result shows that etch skew affected by long range density by mm unit size. Due to asymmetrical pattern in real gate mask, spider mask which have symmetrical patterns is necessarily used to make PPC model. The etch skew of real pattern clip in spider mask was not also the same for the real pattern in real gate mask. To reduce this skew difference between spider mask and real mask, we applied open field mask correction term and long range density effects correlation equation to PPC modeling. There was noticeable improvement in the accuracy of PPC model. By applying these improvement items, OCV of 20 nm node DRAM gate is shown to improve up to 67%.

  10. Porous Gold Films Fabricated by Wet-Chemistry Processes

    Directory of Open Access Journals (Sweden)

    Aymeric Pastre

    2016-01-01

    Full Text Available Porous gold films presented in this paper are formed by combining gold electroless deposition and polystyrene beads templating methods. This original approach allows the formation of conductive films (2 × 106 (Ω·cm−1 with tailored and interconnected porosity. The porous gold film was deposited up to 1.2 μm on the silicon substrate without delamination. An original zirconia gel matrix containing gold nanoparticles deposited on the substrate acts both as an adhesion layer through the creation of covalent bonds and as a seed layer for the metallic gold film growth. Dip-coating parameters and gold electroless deposition kinetics have been optimized in order to create a three-dimensional network of 20 nm wide pores separated by 20 nm thick continuous gold layers. The resulting porous gold films were characterized by GIXRD, SEM, krypton adsorption-desorption, and 4-point probes method. The process is adaptable to different pore sizes and based on wet-chemistry. Consequently, the porous gold films presented in this paper can be used in a wide range of applications such as sensing, catalysis, optics, or electronics.

  11. Development studies for a novel wet oxidation process

    Energy Technology Data Exchange (ETDEWEB)

    Dhooge, P.M.; Hakim, L.B.

    1994-01-01

    A catalytic wet oxidation process (DETOX), which uses an acidic iron solution to oxidize organic compounds to carbon dioxide, water, and other simple products, was investigated as a potential method for the treatment of multicomponent hazardous and mixed wastes. The organic compounds picric acid, poly(vinyl chloride), tetrachlorothiophene, pentachloropyridine, Aroclor 1260 (a polychlorinated biphenyl), and hexachlorobenzene were oxidized in 125 ml reaction vessels. The metals arsenic, barium, beryllium, cadmium, cerium (as a surrogate for plutonium), chromium, lead, mercury, neodymium (as a surrogate for uranium), nickel, and vanadium were tested in the DETOX solution. Barium, beryllium, cerium, chromium, mercury, neodymium, nickel, and vanadium were all found to be very soluble (>100 g/l) in the DETOX chloride-based solution. Arsenic, barium, cadmium, and lead solubilities were lower. Lead could be selectively precipitated from the DETOX solution. Chromium(VI) was reduced to relatively non-toxic chromium(III) by the solution. Six soils were contaminated with arsenic, barium, beryllium, chromium, lead, and neodymium oxides at approximately 0.1% by weight, and benzene, trichloroethene, mineral oil, and Aroclor 1260 at approximately 5% by weight total, and 5.g amounts treated with the DETOX solution in unstirred 125. ml reaction bombs. It is felt that soil treatment in a properly designed system is entirely possible despite incomplete oxidation of the less volatile organic materials in these unstirred tests.

  12. Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Altamore, C; Tringali, C; Sparta' , N; Marco, S Di; Grasso, A; Ravesi, S [STMicroelectronics, Industial and Multi-segment Sector R and D, Catania (Italy)

    2010-02-15

    In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (10{sup 5}) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 10{sup 1} Hz to 10{sup 6} Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl{sub 2}/Ar chemistry. The relationship between the etch rate and the Cl{sub 2}/Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl{sub 2}/Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

  13. Silicon nanowire photodetectors made by metal-assisted chemical etching

    Science.gov (United States)

    Xu, Ying; Ni, Chuan; Sarangan, Andrew

    2016-09-01

    Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

  14. Multivariate modelling of the tablet manufacturing process with wet granulation for tablet optimization and in-process control

    NARCIS (Netherlands)

    Westerhuis, J.A; Coenegracht, P.M J; Lerk, C.F

    1997-01-01

    The process of tablet manufacturing with granulation is described as a two-step process. The first step comprises wet granulation of the powder mixture, and in the second step the granules are compressed into tablets. For the modelling of the pharmaceutical process of wet granulation and tableting,

  15. High haze textured surface B-doped ZnO-TCO films on wet-chemically etched glass substrates for thin film solar cells

    Science.gov (United States)

    Xinliang, Chen; Jieming, Liu; Jia, Fang; Ze, Chen; Ying, Zhao; Xiaodan, Zhang

    2016-08-01

    Textured glass substrates with crater-like feature sizes of ˜5-30 μm were obtained using the chemical etching method through adjusting the treatment round (R). Pyramid-like boron-doped zinc oxide (ZnO:B) films with feature sizes of ˜300-800 nm were deposited on the etched glass substrates by the metal organic chemical deposition (MOCVD) technique using water, diethylzinc and 1%-hydrogen-diluted diborane. The ZnO:B films on the etched glass with micro/nano double textures presented a much stronger light-scattering capability than the conventional ZnO:B on the flat glass and their electrical properties changed little. Typical etched glass-3R/ZnO:B exhibited a high root mean square (RMS) roughness of ˜160 nm. The haze values at the wavelengths of 550 nm and 850 nm for etched glass-3R/ZnO:B sample were 61% and 42%, respectively. Finally, the optimized etched glass/ZnO:B was applied in the silicon (Si) based thin film solar cells. The high haze etched glass/ZnO:B substrates have potential merits for thin film solar cells. Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707), the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900), the Tianjin Major Science and Technology Support Project (No. 11TXSYGX22100), the National High Technology Research and Development Program of China (No. 2013AA050302), and the Fundamental Research Funds for the Central Universities (No. 65010341).

  16. A systematic study of the chemical etching process on periodically poled lithium niobate structures

    Energy Technology Data Exchange (ETDEWEB)

    Argiolas, N. [INFM-MATIS and Physics Department, University of Padova, Via Marzolo 8, 35131 Padova (Italy); Bazzan, M. [INFM-MATIS and Physics Department, University of Padova, Via Marzolo 8, 35131 Padova (Italy); Bernardi, A. [INFM-MATIS and Physics Department, University of Padova, Via Marzolo 8, 35131 Padova (Italy); Cattaruzza, E. [INFM-MATIS and Physics Department, University of Padova, Via Marzolo 8, 35131 Padova (Italy); Mazzoldi, P. [INFM-MATIS and Physics Department, University of Padova, Via Marzolo 8, 35131 Padova (Italy); Schiavuta, P. [INFM-MATIS and Physics Department, University of Padova, Via Marzolo 8, 35131 Padova (Italy); Sada, C. [INFM-MATIS and Physics Department, University of Padova, Via Marzolo 8, 35131 Padova (Italy)]. E-mail: sada@padova.infm.it; Hangen, U. [Surface, Rheinstr. 7, D-41836 Hueckelhoven (Germany)

    2005-04-25

    A systematic analysis on the dynamics of the chemical etching of periodically poled lithium niobate (PPLN) structures grown by off-center Czochralski technique was carried out on crystals prepared under different experimental growth conditions. The etched depth reaches values close to 600 nm and it does not further increase even after long etching times. However, the lateral etching cannot be neglected when the etching times are higher than 5 min. The estimation of the domain widths distribution can be affected by artifacts if the etching conditions are not properly chosen. The best structures are obtained for erbium oxide doping level of 0.3 mol% into the starting melt and the period depends on the pulling and rotational rates instead of on the growing rate. This results support the role of the thermoelectric field in the domain formation at the Curie isotherm.

  17. Reductive stripping process for the recovery of uranium from wet-process phosphoric acid

    Science.gov (United States)

    Hurst, Fred J.; Crouse, David J.

    1984-01-01

    A reductive stripping flow sheet for recovery of uranium from wet-process phosphoric acid is described. Uranium is stripped from a uranium-loaded organic phase by a redox reaction converting the uranyl to uranous ion. The uranous ion is reoxidized to the uranyl oxidation state to form an aqueous feed solution highly concentrated in uranium. Processing of this feed through a second solvent extraction cycle requires far less stripping reagent as compared to a flow sheet which does not include the reductive stripping reaction.

  18. Realization of tellurium-based all dielectric optical metamaterials using a multi-cycle deposition-etch process

    Science.gov (United States)

    Liu, Sheng; Ihlefeld, Jon F.; Dominguez, Jason; Gonzales, Edward F.; Eric Bower, John; Bruce Burckel, D.; Sinclair, Michael B.; Brener, Igal

    2013-04-01

    Tellurium (Te) dielectric resonator metamaterials for thermal infrared applications were fabricated using a multi-cycle deposition-etch process that circumvents pinch-off issues during deposition. Deposition and etching of Te were studied in detail. Metamaterial samples with varying resonator dimensions were fabricated using this technique. All the samples showed two transmission minima corresponding to magnetic and electric dipole resonances. Longer resonant wavelengths were observed as the resonator dimension was increased. Observation of spectral overlap between magnetic and electric resonances gives us the potential opportunity to realize a negative refractive index material.

  19. Process Development for Reactive-Ion Etching of Molybdenum Disulfide (MoS2) Utilizing a Poly(methyl methacrylate) (PMMA) Etch Mask

    Science.gov (United States)

    2017-10-01

    solvents and additional dry etching steps. The first approach relied on post-etch treatments utilizing different solvents and heating of the solvents...applications with flexible substrates this heat treatment is often not allowed. Since polymer interaction with 2-D layers often leads to residues that...Acknowledgments vi 1. Introduction 1 2. Methods/Procedures 2 3. Results 3 3.1 PMMA Age and Composition 4 3.2 RIE Treatment 5 3.3 MoS2 Etch

  20. Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

    NARCIS (Netherlands)

    Jansen, Henricus V.; de Boer, Meint J.; Unnikrishnan, S.; Louwerse, M.C.; Elwenspoek, Michael Curt

    An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares

  1. Novel back-channel-etch process flow based a-IGZO TFTs for circuit and display applications on PEN foil

    NARCIS (Netherlands)

    Nag, M.; Rockele, M.; Steudel, S.; Chasin, A.; Myny, K.; Bhoolokam, A.; Willegems, M.; Smout, S.; Vicca, P.; Ameys, M.; Ke, T.H.; Schols, S.; Genoe, J.; Steen, J.L. P.J. van der; Groeseneken, G.; Heremans, P.

    2014-01-01

    In this study, we report high-quality amorphous indiunrv-galiium-zinc-oxide (a-IGZO) thinfilm transistors (TFTs) fabricated on a polyethylene naphthalate foil using a new back-channel-etch (BCE) process flow. The BCE flow allows a better scalability of TFTs for high-resolution backplanes and related

  2. Optimized Deep UV Curing Process for Metal-Free Dry-Etching of Critical Integrated Optical Devices

    NARCIS (Netherlands)

    Sengo, G.; Sengo, G.; van Wolferen, Hendricus A.G.M.; Driessen, A.

    In this paper we present results of Deep UV-curing of resist followed by thermal treatment at temperatures up to 280°C. The curing process was optimized for positive resist profiles of Fujifilm with thicknesses from 0.3 to 3.0 µm. The procedure was for the first time employed to etch critical

  3. Plasma etching an introduction

    CERN Document Server

    Manos, Dennis M

    1989-01-01

    Plasma etching plays an essential role in microelectronic circuit manufacturing. Suitable for researchers, process engineers, and graduate students, this book introduces the basic physics and chemistry of electrical discharges and relates them to plasma etching mechanisms. Throughout the volume the authors offer practical examples of process chemistry, equipment design, and production methods.

  4. Wet chemical preparation and isotope exchange process of H/D-terminated Si(111) and Si(110) studied by adsorbate vibrational analysis

    Science.gov (United States)

    Kawamoto, Erina; Kang, Jungmin; Matsuda, Takuya; Yamada, Taro; Suto, Shozo

    2017-02-01

    A convenient procedure for preparing D-terminated Si(111)-(1×1) and Si(110)-(1×1) by wet chemical etching was developed and applied to the vibrational analysis of these surfaces by high-resolution electron-energy loss spectroscopy (HREELS). Fully H-terminated Si(111)/(110) was first prepared in regular 40% NH4F/H2O solution, followed by immersion in saturated KF/D2O solution. HREELS revealed partially D-terminated H:Si(111)/(110) with the amount of deuterium termination depending on the immersion time. A series of various immersion times revealed the H/D exchange reaction kinetics, which are associated with the Si substrate etching processes on Si(111) (step-flow etching) and Si(110) (zipper reaction). The H-Si and D-Si stretching vibration frequencies as functions of the surface D fraction did not appear to change on Si(111), but on Si(110) the H-Si signal red shifted at a high D fraction. This is due to the adsorbate-adsorbate interaction, which is more intense on Si(110) because of the short nearest-neighbor distance of the adsorbates.

  5. Black silicon with self-cleaning surface prepared by wetting processes.

    Science.gov (United States)

    Zhang, Ting; Zhang, Peng; Li, Shibin; Li, Wei; Wu, Zhiming; Jiang, Yadong

    2013-08-13

    This paper reports on a simple method to prepare a hydrophobic surface on black silicon, which is fabricated by metal-assisted wet etching. To increase the reaction rate, the reaction device was placed in a heat collection-constant temperature type magnetic stirrer and set at room temperature. It was demonstrated that the micro- and nanoscale spikes on the black silicon made the surface become hydrophobic. As the reaction rate increases, the surface hydrophobicity becomes more outstanding and presents self-cleaning until the very end. The reflectance of the black silicon is drastically suppressed over a broad spectral range due to the unique geometry, which is effective for the enhancement of absorption.

  6. A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2 and SF6/O2

    National Research Council Canada - National Science Library

    Oh, Seon-Geun; Park, Kwang-Su; Lee, Young-Jun; Jeon, Jae-Hong; Choe, Hee-Hwan; Seo, Jong-Hyun

    2014-01-01

      The characteristics of the dry etching of [subscript] SiN x [/subscript] :H thin films for display devices using SF6/O2 and NF3/O2 were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE) system...

  7. Development studies of a novel wet oxidation process

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, T.W.; Dooge, P.M.

    1996-12-31

    The objective of this study is to develop a novel catalytic chemical oxidation process that can be used to effectively treat multi-component wastes with a minimum of pretreatment characterization, thus providing a versatile, non-combustion method which will destroy hazardous organic compounds while simultaneously containing and concentrating toxic and radioactive metals for recovery or disposal in a readily stabilized matrix. Although the DETOX{sup SM} process had been tested to a limited extent for potential application to mixed wastes, there had not been sufficient experience with the process to determine its range of application to multicomponent waste forms. The potential applications of the process needed to be better identified. Then, the process needed to be demonstrated on wastes and remediate types on a practical scale in order that data could be obtained on application range, equipment size, capital and operating costs, effectiveness, safety, reliability, permittability, and potential commercial applications of the process. The approach for the project was, therefore, to identify the potential range of applications of the process (Phase I), to choose demonstration sites and design a demonstration prototype (Phase II), to fabricate and shakedown the demonstration unit (Phase III), then finally to demonstrate the process on surrogate hazardous and mixed wastes, and on actual mixed wastes (Phase IV).

  8. Mechanistic modelling of fluidized bed drying processes of wet porous granules

    DEFF Research Database (Denmark)

    Mortier, Séverine Thérèse F.C.; De Beer, Thomas; Gernaey, Krist

    2011-01-01

    particle, can be described using the continuum approach, the pore network modelling method and the shrinkage of the diameter of the wet core approach. As several granules dry at a drying rate dependent on the gas temperature, gas velocity, porosity, etc., the moisture content of a batch of granules......Fluidized bed dryers are frequently used in industrial applications and also in the pharmaceutical industry. The general incentives to develop mechanistic models for pharmaceutical processes are listed, and our vision on how this can particularly be done for fluidized bed drying processes of wet...... granules is given. This review provides a basis for future mechanistic model development for the drying process of wet granules in pharmaceutical processes. It is intended for a broad audience with a varying level of knowledge on pharmaceutical processes and mathematical modelling. Mathematical models...

  9. New development on electrochemical etching processes at the Atomic Energy Organization of Iran

    CERN Document Server

    Sohrabi, M

    1999-01-01

    Some highlights of new developments made in our laboratory at the Atomic Energy Organization of Iran on chemical and electrochemical etching (ECE) of polymer track detectors like polycarbonate (PC) are presented. They include introduction of new ECE chamber systems and methods for production of ECE signs and symbols, and a new versatile ECE chamber (VECE) system for multi-purpose, multi-size, and/or multi-shape detector processing; determination of photoneutron doses in and around high-energy X-ray beams of a 20 MV medical accelerator; verification of the Smythe and Mason equations for ECE of tracks in polymers; ECE of alpha and recoil tracks in PC using PMW, PEW and PEMW etchants; introduction of a novel method using ethylene diamine for treatment of PC detectors with its applications, for example in precision removal of surface layers of PC (e.g. bulk removal rates of about 0.04, 0.15, 0.36, 0.66, and 1.33 mm min sup - sup 1 for 60%, 65%, 70%, 75% and 80% ethylene diamine solution (v/v) in water respectivel...

  10. Etchant wettability in bulk micromachining of Si by metal-assisted chemical etching

    Science.gov (United States)

    Yoon, Sung-Soo; Lee, Yeong Bahl; Khang, Dahl-Young

    2016-05-01

    Wet bulk micromachining of Si by metal-assisted chemical etching (MaCE) has successfully been demonstrated. Based on the mechanism of defective etching results from Ag and Au metal catalyst experiments, the wettability of etchant solution, in addition to metal type, has been found to have profound effect on the etching process. Addition of low surface tension co-solvent, ethanol in this work, into conventional etchant formulation has enabled complete wetting of etchant on surface, which prevents hydrogen bubble attachment on sample surface during the etching. The complete elimination of bubble attachment guarantees very uniform etch rate on all over the sample surface, and thus prevents premature fragmentation/rupture of catalyst metal layer. Under the optimized etching conditions, the MaCE could be done for up to 12 h without any noticeable film rupture and thus etching defects. Thanks to very smooth surface of the etched patterns, conformal contact and direct bonding of elastomer on such surface has been easily accomplished. The method demonstrated here can pave the way for application of simple, low-cost MaCE process in the bulk micromachining of Si for various applications.

  11. Combining Anisotropic Etching and PDMS Casting for Three-Dimensional Analysis of Laser Ablation Processes.

    Science.gov (United States)

    Grimaudo, Valentine; Moreno-García, Pavel; López, Alena Cedeño; Riedo, Andreas; Wiesendanger, Reto; Tulej, Marek; Gruber, Cynthia; Lörtscher, Emanuel; Wurz, Peter; Broekmann, Peter

    2018-02-20

    State-of-the-art laser ablation (LA) depth-profiling techniques (e.g. LA-ICP-MS, LIBS, and LIMS) allow for chemical composition analysis of solid materials with high spatial resolution at micro- and nanometer levels. Accurate determination of LA-volume is essential to correlate the recorded chemical information to the specific location inside the sample. In this contribution, we demonstrate two novel approaches towards a better quantitative analysis of LA craters with dimensions at micrometer level formed by femtosecond-LA processes on single-crystalline Si(100) and polycrystalline Cu model substrates. For our parametric crater evolution studies, both the number of applied laser shots and the pulse energy were systematically varied, thus yielding 2D matrices of LA craters which vary in depth, diameter, and crater volume. To access the 3D structure of LA craters formed on Si(100), we applied a combination of standard lithographic and deep reactive-ion etching (DRIE) techniques followed by a HR-SEM inspection of the previously formed crater cross sections. As DRIE is not applicable for other material classes such as metals, an alternative and more versatile preparation technique was developed and applied to the LA craters formed on the Cu substrate. After the initial LA treatment, the Cu surface was subjected to a polydimethylsiloxane (PDMS) casting process yielding a mold being a full 3D replica of the LA craters, which was then analyzed by HR-SEM. Both approaches revealed cone-like shaped craters with depths ranging between 1 and 70 μm and showed a larger ablation depth of Cu that exceed the one of Si by a factor of about 3.

  12. Influence of citric acid on SnO2 nanoparticles synthesized by wet chemical processes

    CSIR Research Space (South Africa)

    Sikhwivhilu, LM

    2010-10-01

    Full Text Available Tin oxide (SnO2) nanoparticles with size range of 19 to 100 nm were successfully synthesized using wet chemical process (i.e. chemical precipitation and sol-gel processes). The results showed that variation of citric acid concentration directly...

  13. Program Trainer for Operator of Phosphoric Acid production by Wet-Process

    Directory of Open Access Journals (Sweden)

    Vladimir А. Krivonosov

    2013-01-01

    Full Text Available This article considers the major problems of operator of phosphoric acid production by wet-process during production control, develops program trainer, enabling to speed up the process of operators training, promote their professional qualifications and the production control

  14. Chemical vapour etching-based porous silicon and grooving: Application in silicon solar cells processing

    Energy Technology Data Exchange (ETDEWEB)

    Ben Rabha, M.; Boujmil, M.F.; Saadoun, M.; Bessais, B. [Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaique et des Semiconducteurs, BP 95, 2050 Hammam-Lif (Tunisia)

    2005-06-01

    Sponge like porous silicon (PS) was formed by a simple and low cost chemical vapour etching (CVE) method and applied in polycrystalline silicon (mc-Si) solar cells processing. The CVE method consists of exposing Si wafers to HNO{sub 3}/HF vapours. It was shown that 8 min of HNO{sub 3}/HF CVE (volume ratio = 1/7) is sufficient to form optimized PS layers on the emitter of mc-Si cells. The CVE-based PS can simultaneously passivate the Si surface and serves as an effective antireflection coating (ARC). As a result, the reflectivity decreases by about 60% of its initial value and the internal quantum efficiency is improved, particularly in the short wavelength region. For acid vapours rich in HNO{sub 3} (HNO{sub 3}/HF >1/4), the CVE method favours the formation of a (NH{sub 4}){sub 2}SiF{sub 6} powder, which is highly soluble in water. These findings let us achieve anisotropic grooving that enables to groove mc-Si wafers locally and in depth using an adequate anti-acid mask. The CVE - based grooving technique was used to form buried metallic contacts on the rear and frontal surface of the Si wafer in order to improve the current collection in mc-Si solar cells. No alteration of the spectral response in the long wavelength range was observed in mc-Si cells with rear-buried contacts. Adjustments of theoretical spectral responses to experimental ones show an increase in the effective electron diffusion length (Ln), which was attributed to Al gettering (passivation) at grain boundaries and to the reduction of the effective thickness of the base of the cells. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Cloud condensation nuclei activity and droplet activation kinetics of wet processed regional dust samples and minerals

    Directory of Open Access Journals (Sweden)

    P. Kumar

    2011-08-01

    Full Text Available This study reports laboratory measurements of particle size distributions, cloud condensation nuclei (CCN activity, and droplet activation kinetics of wet generated aerosols from clays, calcite, quartz, and desert soil samples from Northern Africa, East Asia/China, and Northern America. The dependence of critical supersaturation, sc, on particle dry diameter, Ddry, is used to characterize particle-water interactions and assess the ability of Frenkel-Halsey-Hill adsorption activation theory (FHH-AT and Köhler theory (KT to describe the CCN activity of the considered samples. Wet generated regional dust samples produce unimodal size distributions with particle sizes as small as 40 nm, CCN activation consistent with KT, and exhibit hygroscopicity similar to inorganic salts. Wet generated clays and minerals produce a bimodal size distribution; the CCN activity of the smaller mode is consistent with KT, while the larger mode is less hydrophilic, follows activation by FHH-AT, and displays almost identical CCN activity to dry generated dust. Ion Chromatography (IC analysis performed on regional dust samples indicates a soluble fraction that cannot explain the CCN activity of dry or wet generated dust. A mass balance and hygroscopicity closure suggests that the small amount of ions (from low solubility compounds like calcite present in the dry dust dissolve in the aqueous suspension during the wet generation process and give rise to the observed small hygroscopic mode. Overall these results identify an artifact that may question the atmospheric relevance of dust CCN activity studies using the wet generation method.

    Based on the method of threshold droplet growth analysis, wet generated mineral aerosols display similar activation kinetics compared to ammonium sulfate calibration aerosol. Finally, a unified CCN activity framework that accounts for concurrent effects of solute and adsorption is developed to

  16. Wet autoclave pretreatment for immunohistochemical demonstration of oestrogen receptors in routinely processed breast carcinoma tissue.

    Science.gov (United States)

    Bier, B; Bankfalvi, A; Grote, L; Blasius, S; Ofner, D; Böcker, W; Jasani, B; Schmid, K W

    1995-02-01

    The immunohistochemical demonstration of oestrogen receptor (OR) was performed on 32 randomly selected and routinely processed breast carcinomas after wet autoclave pretreatment of sections. The autoclave method was compared to the OR status found on frozen sections as well as to alternative pretreatment methods such as enzymatic predigestion and microwave irradiation. Using four different monoclonal antibody clones (H222, LH1, CC4-5, 1D5.26), the OR status was evaluated for each of the various pretreatment methods applied. All cases with a high OR content on frozen sections (n = 11) also showed a high OR status on wet autoclave-pretreated paraffin tissues using antibody clones 1D5.26 and CC4-5; in cases with low OR content on frozen sections, no false-negative cases were recorded using only the antibody 1D5.26 neither after wet autoclave nor microwave pretreatment. In addition, with this antibody, OR was detectable after autoclave pretreatment in two cases which were considered to be OR-negative even on frozen sections. When the primary antibody was omitted, no false-positive cases were observed after wet autoclave pretreatment. Thus, in our hands, wet autoclave pretreatment, in combination with the antibody 1D5.26, offers a highly sensitive method for the immunohistochemical demonstration of OR in routinely formalin-fixed, paraffin-embedded sections of breast carcinomas.

  17. Comparison of torque measurements and near-infrared spectroscopy in characterization of a wet granulation process

    DEFF Research Database (Denmark)

    Jørgensen, Anna Cecilia; Luukkonen, Pirjo; Rantanen, Jukka

    2004-01-01

    The purpose of this study was to compare impeller torque measurements and near-infrared (NIR) spectroscopy in the characterization of the water addition phase of a wet granulation process. Additionally, the effect of hydrate formation during granulation on the impeller torque was investigated....... Anhydrous theophylline, alpha-lactose monohydrate, and microcrystalline cellulose (MCC) were used as materials for the study. The materials and mixtures of them were granulated using purified water in a small-scale high-shear mixer. The impeller torque was registered and NIR spectra of wet samples were...... recorded at-line. The torque and the NIR baseline-corrected water absorbances increased with increasing water content. A plateau in the NIR baseline-corrected water absorbances was observed for wet masses containing MCC. This was at the region of optimal water amount for granulation according to the torque...

  18. Dry etching for microelectronics

    CERN Document Server

    Powell, RA

    1984-01-01

    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  19. Etching in microsystem technology

    CERN Document Server

    Kohler, Michael

    2008-01-01

    Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

  20. The Tensile and Shear Bond Strengths of Poly (Methyl Methacrylate) Processed on Electrolytically Etched Ticonium.

    Science.gov (United States)

    1986-05-01

    developed a technique for retention of resin veneers on complete crowns by using a pitting corrosion of the nickel-chromium copper alloy. McLaughlin (1981...bridges. Pediatr Dent. 4: 38-43. 98. Thompson, V.P., K. Grolman, and R. Liao. 1984. Electrolytic etching of Co-Cr alloys for resin bonded restorations...CLASSIFICATION OF THIS PAGE (4ihen Data Entered) , .. ’ .’ " -’, , :-.. ~ -., , I .. 2 INTRODUCTION The rtention of acrylic denture resins to metal based

  1. Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch

    Science.gov (United States)

    Shao, Jinhai; Deng, Jianan; Lu, W.; Chen, Yifang

    2017-07-01

    A process to fabricate T-shaped gates with the footprint scaling down to 10 nm using a double patterning procedure is reported. One of the keys in this process is to separate the definition of the footprint from that for the gate-head so that the proximity effect originated from electron forward scattering in the resist is significantly minimized, enabling us to achieve as narrow as 10-nm foot width. Furthermore, in contrast to the reported technique for 10-nm T-shaped profile in resist, this process utilizes a metallic film with a nanoslit as an etch mask to form a well-defined 10-nm-wide foot in a SiNx layer by reactive ion etch. Such a double patterning process has demonstrated enhanced reliability. The detailed process is comprehensively described, and its advantages and limitations are discussed. Nanofabrication of InP-based high-electron-mobility transistors using the developed process for 10- to 20-nm T-shaped gates is currently under the way.

  2. Texture-Etched SnO2 Glasses Applied to Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Bing-Rui Wu

    2014-01-01

    Full Text Available Transparent electrodes of tin dioxide (SnO2 on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2 glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2 glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2.

  3. Municipal solid waste processing and separation employing wet torrefaction for alternative fuel production and aluminum reclamation.

    Science.gov (United States)

    Mu'min, Gea Fardias; Prawisudha, Pandji; Zaini, Ilman Nuran; Aziz, Muhammad; Pasek, Ari Darmawan

    2017-09-01

    This study employs wet torrefaction process (also known as hydrothermal) at low temperature. This process simultaneously acts as waste processing and separation of mixed waste, for subsequent utilization as an alternative fuel. The process is also applied for the delamination and separation of non-recyclable laminated aluminum waste into separable aluminum and plastic. A 2.5-L reactor was used to examine the wet torrefaction process at temperatures below 200°C. It was observed that the processed mixed waste was converted into two different products: a mushy organic part and a bulky plastic part. Using mechanical separation, the two products can be separated into a granular organic product and a plastic bulk for further treatment. TGA analysis showed that no changes in the plastic composition and no intrusion from plastic fraction to the organic fraction. It can be proclaimed that both fractions have been completely separated by wet torrefaction. The separated plastic fraction product obtained from the wet torrefaction treatment also contained relatively high calorific value (approximately 44MJ/kg), therefore, justifying its use as an alternative fuel. The non-recyclable plastic fraction of laminated aluminum was observed to be delaminated and separated from its aluminum counterpart at a temperature of 170°C using an additional acetic acid concentration of 3%, leaving less than 25% of the plastic content in the aluminum part. Plastic products from both samples had high calorific values of more than 30MJ/kg, which is sufficient to be converted and used as a fuel. Copyright © 2017 Elsevier Ltd. All rights reserved.

  4. Development of chemical and biological processes for production of bioethanol. Optimization of the wet oxidation process and characterization of products

    Energy Technology Data Exchange (ETDEWEB)

    Bjerre, A.B.; Skammelsen Schmidt, A.

    1997-02-01

    The combination of the wet oxidation pretreatment process and alkaline hydrolysis was investigated in order to efficiently solubilize the hemicellulose, degrade the lignin, and open the solid crystalline cellulose structure of wheat straw lignocellulose without generating fermentation inhibitors. The effects of temperature, oxygen pressure, reaction time, and concentration of straw were evaluated. The degree of lignin degradation and hemicellulose solubilization increased with the reaction temperature and time. The optimum conditions were 15 minutes at 185 deg. C, producing 9.8 g/L hemicellulose. For quantification of the solubilized hemicellulose the best overall acid hydrolysis was obtained by treatment with 4 %w/v sulfuric acid for 10 minutes. The Aminex HPX-87H column was less sensitive towards impurities than the Aminex HPX-87P column. HPX-87H gave improved recovery and reproducibility, and was chosen for routine quantification of hydrolyzed hemicellulose sugars. The purity of the solid cellulose fraction also improved with higher temperature. The optimum condition for obtaining enzymatic convertible cellulose (90%) was 10 minutes at 170 deg. C using a high carbonate concentration. The hemicellulose yield and recovery were significantly reduced under these conditions indicating that a simultaneous optimal utilization of the hemicellulose and cellulose was difficult. The oxygen pressure and sodium carbonate concentration had little effect on the solubilization of hemicellulose, however, by combining wet oxidation with alkaline hydrolysis the formation of 2-furfural, a known microbial inhibitor, was minimal. Much more hemicellulose and lignin were solubilized from the straw by wet oxidation than by steaming(an alternative process). More cellulose was solubilized (and degraded) by steaming than by wet oxidation. Overall carbohydrates `losses` of 20.1% for steaming and 16.2% for wet oxidation were found. More 2-furfural was formed by steaming than by wet oxidation.

  5. Differential photoacoustic cell to study the wetting process during porous silicon formation

    Energy Technology Data Exchange (ETDEWEB)

    German Espinosa-Arbelaez, Diego [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Posgrado en Ciencia e Ingenieria de Materiales, Edificio de Posgrado, Coyoacan, CP 04530, Mexico D. F. (Mexico); Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Blvd Juriquilla 3001, Campus Juriquilla, CP 76230, Queretaro, Qro. (Mexico); Velazquez-Hernandez, Ruben [Division de Investigacion y Posgrado, Facultad de Ingenieria, Universidad Autonoma de Queretaro, Cerro de las Campanas, CP 76010, Queretaro, Qro (Mexico); Petricioli-Carranco, Julio; Quintero-Torres, Rafael; Rodriguez-Garcia, Mario Enrique [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Blvd Juriquilla 3001, Campus Juriquilla, CP 76230, Queretaro, Qro. (Mexico)

    2011-06-15

    This paper shows the in-situ study of the wetting process in Silicon during anodization process using an electrochemical Differential photoacoustic Cell (DPC). The Photoacoustic amplitude and phase signals were obtained for samples in air, ethanol, ethanol/HF and finally air. According to these results ethanol is responsible for a mechanical contact reducing the superficial tension and ethanol/HF produce the removing of the SiO{sub x} and SiO{sub 2}species on the Silicon surface. It was found that the DPC is a powerful technique to study the wet surface before the formation of the porous silicon layer (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Examining Wetting and Dewetting Processes in Thin-films on Crystalline Substrates at the Nanoscale

    Science.gov (United States)

    Hihath, Sahar

    Controlling the wetting and dewetting of ultra-thin films on solid substrates is important for a variety of technological and fundamental research applications. These applications include film deposition for semiconductor manufacturing, the growth of nanowires through nanoparticle-based catalysis sites, to making ordered arrays of nanoscale particles for electronic and optical devices. However, despite the importance of these processes, the underlying mechanisms by which a film wets a surface or dewets from it is still often unclear and widely debated. In this dissertation we examine wetting and dewetting processes in three materials systems that are relevant for device applications with the ultimate goal of understanding what mechanisms drive the wetting (or dewetting) process in each case. First, we examine the formation of wetting layers between nanoparticle films and highly conductive GaAs substrates for spintronic applications. In this case, the formation of a wetting layer is important for nanoparticle adhesion on the substrate surface. Wetting layers can be made by annealing these systems, which causes elemental diffusion from nanoparticles into the substrate, thereby adhesion between the nanoparticles and the substrate. Here we investigate the feasibility of forming a wetting layer underneath nanoparticles post-annealing in a system of Fe3O4 nanoparticles on a (100) GaAs substrate by studying the interface structure and composition via Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS) and Energy Dispersive X-ray Spectroscopy (EDXS). Electron Energy-Loss fine structures of the Fe-L 3,2 and O-K absorption edges were quantitatively analyzed to gain insight about the compositional gradient of the interface between the nanoparticles and the GaAs substrate. Additionally, real-space density functional theory calculations of the dynamical form factor was performed to confirm the

  7. Soil wetting processes at high temporal resolution in a semiarid mediterranean watershed with scattered tree cover

    Science.gov (United States)

    Lozano-Parra, Javier; van Schaik, Loes; Schnabel, Susanne; Gómez-Gutiérrez, Álvaro

    2015-04-01

    Soil wetting processes play a key role for the distribution of water and solutes and thereby for the water availability for plants. However, characterization of such processes (from slower to faster flows), frequency of occurrence, and factors that cause them, are still poorly known. This characterization is important in hydrological studies because enables a better understanding of spatio-temporal variability of water resources and allows improving the design of models. Using a method based on the maximal soil water increase registered by a sensor over a minimum given time interval during a rainfall event, types of soil wetting processes were classified and quantified. For this, capacitance sensors which registered the volumetric water content at high temporal resolution (30-min) along of more than two hydrological years (mainly for 2010-2011 and 2011-2012), were installed in soil profiles at 5, 15 cm, and 5 cm above the bedrock and depending on soil depth. This distribution along the soil profile is justified because soils are generally very shallow and most of the roots are concentrated in the upper layer. The sensors were gathered in 9 soil moisture stations characterized by lithology, topographic position, as well as by different vegetation covers: under tree canopy, under shrub, and in open spaces or grasslands. Besides, the data mining technique Multivariate Adaptive Regression Spline (MARS) was used to identify and rank the factors influencing flow types as well as modelling their occurrence. The work was carried out in an experimental catchment of the Spanish region of Extremadura. Results indicated that there is a general behavior or pattern of soil moisture dynamics in the catchment with a dominant occurrence of slower soil wetting processes (>50%), which may be considered as matrix flows, and a low occurrence of those faster processes (process, so that the ecological role of both flow types becomes prominent in water-limited environments. Statistical

  8. Solid waste management practices in wet coffee processing industries of Gidabo watershed, Ethiopia.

    Science.gov (United States)

    Ulsido, Mihret D; Li, Meng

    2016-07-01

    The financial and social contributions of coffee processing industries within most coffee export-based national economies like Ethiopia are generally high. The type and amount of waste produced and the waste management options adopted by these industries can have negative effects on the environment. This study investigated the solid waste management options adopted in wet coffee processing industries in the Gidabo watershed of Ethiopia. A field observation and assessment were made to identify whether the operational characteristics of the industries have any effect on the waste management options that were practiced. The investigation was conducted on 125 wet coffee processing industries about their solid waste handling techniques. Focus group discussion, structured questionnaires, key informant interview and transect walks are some of the tools employed during the investigation. Two major types of wastes, namely hull-bean-pulp blended solid waste and wastewater rich in dissolved and suspended solids were generated in the industries. Wet mills, on average, released 20.69% green coffee bean, 18.58% water and 60.74% pulp by weight. Even though these wastes are rich in organic matter and recyclables; the most favoured solid waste management options in the watershed were disposal (50.4%) and industrial or household composting (49.6%). Laxity and impulsive decision are the driving motives behind solid waste management in Gidabo watershed. Therefore, to reduce possible contamination of the environment, wastes generated during the processing of red coffee cherries, such as coffee wet mill solid wastes, should be handled properly and effectively through maximisation of their benefits with minimised losses. © The Author(s) 2016.

  9. Modeling of asymmetric membrane formation by a combination of dry/wet phase inversion processes

    OpenAIRE

    Altınkaya, Sacide

    2006-01-01

    The invention of asymmetric polymer membranes by Loeb and Sourirajan has caused an enormous growth in the field of membrane science and technology. Application areas range from chemical, biomedical to biotechnology industries. Asymmetric membranes are mostly fabricated by a process called phase inversion which can be achieved through four principal methods: immersion precipitation (wet phase inversion), vapor-induced phase separation, thermally induced phase separation and dry-...

  10. Fatty acid composition of maize germ oil from high-oil hybrids wet-milling processing

    Directory of Open Access Journals (Sweden)

    Jovanović Petar Lj.

    2005-01-01

    Full Text Available Maize germ was obtained by wet-milling laboratory processing of domestic high-oil maize hybrids. After separation, the germ was subjected to extraction of maize oil. Fatty acid composition of maize germ oil was determined by gas chromatography. The results showed very high levels of unsaturated fatty acids and a constant sum of oleic and linoleic acids in oils of different maize hybrids.

  11. Enhancing hydrophilicity and water permeability of PET track-etched membranes by advanced oxidation process

    Science.gov (United States)

    Korolkov, Ilya V.; Mashentseva, Anastassiya A.; Güven, Olgun; Zdorovets, Maxim V.; Taltenov, Abzal A.

    2015-12-01

    In this study we present results on the application of advanced oxidation systems for effective and non-toxic oxidation of poly(ethylene terephthalate) track-etched membranes (PET TeMs) to improve their wettability and water transport properties. Two oxidizing systems: H2O2 under UV irradiation (H2O2/UV) and Fenton system under visible light (Fenton/H2O2/Vis) were compared. The surface of functionalized PET TeMs was characterized by using colorimetric assay, contact angle measurements and X-ray photoelectron spectroscopy (XPS). Results clearly showed that water permeability of PET TeMs treated with H2O2/UV was improved by 28 ± 5% compared with etched-only membrane, the same parameter was found to increase by 13 ± 4% in the case of Fenton/H2O2/Vis treatment. The proposed oxidation technique is very simple, environment friendly and not requiring special equipment or expensive chemicals. The surface hydrophilicity of the membranes stored for 360 days in air between paper sheets was analyzed by contact angle test, colorimetric assay to measure concentration of carboxylic groups on the surface with toluidine blue and XPS analysis. The hydrophilic properties of oxidized PET TeMs were found to be stable for a long period of time.

  12. Analysis of wet granulation process with Plackett-Burman design--case study.

    Science.gov (United States)

    Woyna-Orlewicz, Krzysztof; Jachowicz, Renata

    2011-01-01

    According to Process Analytical Technology perspective, drug product quality should be ensured by manufacturing process design. Initial step of the process analysis is investigation of critical process parameters (CPPs). It is generally accepted to type the CPPs based on project team knowledge and experience [5]. This paper describes the use of Design of Experiments tool for selection of the CPPs. Seven factors of wet granulation process were investigated for criticality. Low and high levels of each factor represented maximal and minimal settings of wide operational ranges. Granulates were produced in line with Plackett-Burman experimental matrix, blended with extra-granular excipients and compressed into tablets. Semi-products and final products were tested. Out of specification result of any critical quality attribute was treated as critical failure. The high-shear granulation factors, i.e. quantity of binding solution, rotational speed of impeller and wet massing time were considered of critical importance. Operational ranges of the parameters were optimized. The process performance was confirmed in qualification trials.

  13. Phosphorus recovery from sewage sludge with a hybrid process of low pressure wet oxidation and nanofiltration.

    Science.gov (United States)

    Blöcher, Christoph; Niewersch, Claudia; Melin, Thomas

    2012-04-15

    Phosphorus recovery from sewage sludge will become increasingly important within the next decades due to depletion of mineral phosphorus resources. In this work a new process concept was investigated, which aims at realising phosphorus recovery in a synergistic way with the overall sewage sludge treatment scheme. This process combines a low pressure wet oxidation for sewage sludge decomposition as well as phosphorus dissolution and a nanofiltration process to separate phosphorus from heavy metals and obtain a clean diluted phosphoric acid, from which phosphorus can be recovered as clean fertiliser. It was shown that this process concept is feasible for sewage sludge for wastewater treatment plants that apply enhanced biological removal or precipitation with alumina salts for phosphorus removal. The critical parameter for phosphorus dissolution in the low pressure wet oxidation process is the iron concentration, while in the nanofiltration multi-valent cations play a predominant role. In total, a phosphorus recovery of 54% was obtained for an exemplary wastewater treatment plant. Costs of the entire process are in the same range as conventional sewage sludge disposal, with the benefit being phosphorus recovery and reduced emission of greenhouse gases due to avoidance of sludge incineration. Copyright © 2012 Elsevier Ltd. All rights reserved.

  14. Prevalence of Salmonella in poultry processing environments in wet markets in Penang and Perlis, Malaysia

    Directory of Open Access Journals (Sweden)

    Hafiz Nidaullah

    2017-03-01

    Full Text Available Aim: The aim of this study was to determine the prevalence of various Salmonella serotypes in chickens, carcass contact surfaces as well as environmental samples collected from wet markets and small scale processing plant. Materials and Methods: A total of 182 poultry and environmental samples were collected at random on separate occasions from wet markets and small scale processing plant, during the period of October 2014 to July 2015 in Penang and Perlis, Malaysia. The samples were analyzed for the presence of Salmonella using ISO 6579:2002 conventional culture-based method. Presumptive Salmonella colonies were subjected to various biochemical tests (such as triple sugar iron and lysine iron test, serologically confirmed using polyvalent O and H antisera and further serotyped at Public Health Laboratory, Ministry of Health, Perak, Malaysia. Results: Salmonella serotypes were isolated from 161 out of 182 samples (88.46% with 100% prevalence in the whole chicken carcass and chicken cuts - as well as transport crate, cage, drum, knife, chopping board, display table, floor, bench wash water, wash water, and drain water. Salmonella was isolated from 91.67%, 83.33%, and 66.67% of defeathering machines, drain swabs, and apron, respectively. 17 serotypes were isolated in this study with Salmonella Albany (57/161, Salmonella Corvallis (42/161, and Salmonella Brancaster (37/161 being the predominant serovars. Conclusion: The most carcass contact and environmental samples collected along the wet market chicken processing line were consistently contaminated with Salmonella. This indicates that Salmonella has established itself in poultry processing environments by colonizing the surfaces of the equipment and survives in these environments by establishing biofilms. Our results highlight the need of implementing strict hygiene and sanitation standards to reduce the incidence of Salmonella. The prevalence of Salmonella in poultry can be reduced effectively

  15. Calculating Soil Wetness, Evapotranspiration and Carbon Cycle Processes Over Large Grid Areas Using a New Scaling Technique

    Science.gov (United States)

    Sellers, Piers

    2012-01-01

    Soil wetness typically shows great spatial variability over the length scales of general circulation model (GCM) grid areas (approx 100 km ), and the functions relating evapotranspiration and photosynthetic rate to local-scale (approx 1 m) soil wetness are highly non-linear. Soil respiration is also highly dependent on very small-scale variations in soil wetness. We therefore expect significant inaccuracies whenever we insert a single grid area-average soil wetness value into a function to calculate any of these rates for the grid area. For the particular case of evapotranspiration., this method - use of a grid-averaged soil wetness value - can also provoke severe oscillations in the evapotranspiration rate and soil wetness under some conditions. A method is presented whereby the probability distribution timction(pdf) for soil wetness within a grid area is represented by binning. and numerical integration of the binned pdf is performed to provide a spatially-integrated wetness stress term for the whole grid area, which then permits calculation of grid area fluxes in a single operation. The method is very accurate when 10 or more bins are used, can deal realistically with spatially variable precipitation, conserves moisture exactly and allows for precise modification of the soil wetness pdf after every time step. The method could also be applied to other ecological problems where small-scale processes must be area-integrated, or upscaled, to estimate fluxes over large areas, for example in treatments of the terrestrial carbon budget or trace gas generation.

  16. Finite element simulation of dynamic wetting flows as an interface formation process

    KAUST Repository

    Sprittles, J.E.

    2013-01-01

    A mathematically challenging model of dynamic wetting as a process of interface formation has been, for the first time, fully incorporated into a numerical code based on the finite element method and applied, as a test case, to the problem of capillary rise. The motivation for this work comes from the fact that, as discovered experimentally more than a decade ago, the key variable in dynamic wetting flows - the dynamic contact angle - depends not just on the velocity of the three-phase contact line but on the entire flow field/geometry. Hence, to describe this effect, it becomes necessary to use the mathematical model that has this dependence as its integral part. A new physical effect, termed the \\'hydrodynamic resist to dynamic wetting\\', is discovered where the influence of the capillary\\'s radius on the dynamic contact angle, and hence on the global flow, is computed. The capabilities of the numerical framework are then demonstrated by comparing the results to experiments on the unsteady capillary rise, where excellent agreement is obtained. Practical recommendations on the spatial resolution required by the numerical scheme for a given set of non-dimensional similarity parameters are provided, and a comparison to asymptotic results available in limiting cases confirms that the code is converging to the correct solution. The appendix gives a user-friendly step-by-step guide specifying the entire implementation and allowing the reader to easily reproduce all presented results, including the benchmark calculations. © 2012 Elsevier Inc.

  17. Investigation of the layout and optical proximity correction effects to control the trench etching process on 4H-SiC

    Science.gov (United States)

    Kyoung, Sinsu; Jung, Eun-Sik; Sung, Man Young

    2017-07-01

    Although trench gate and super-junction technology have micro-trench problems when applied to the SiC process due to the material characteristics. In this paper, area effects are analyzed from the test element group with various patterns and optical proximity correction (OPC) methods are proposed and analyzed to reduce micro-trenches in the SiC trench etching process. First, the loading effects were analyzed from pattern samples with various trench widths (Wt). From experiments, the area must limited under a proper size for a uniform etching profile and reduced micro-trenches because a wider area accelerates the etch rate. Second, the area effects were more severely unbalanced at corner patterns because the corner pattern necessarily has an in-corner and out-corner that have different etching areas to each other. We can balance areas using OPC patterns to overcome this. Experiments with OPC represented improved micro-trench profile from when comparing differences of trench depth (Δdt) at out corner and in corner. As a result, the area effects can be used to improve the trench profile with optimized etching process conditions. Therefore, the trench gate and super-junction pillar of the SiC power MOSFET can have an improved uniform profile without micro-trenches using proper design and OPC.[Figure not available: see fulltext.

  18. The Study of LeachateTreatment by Using Three Advanced Oxidation Process Based Wet air Oxidation

    Directory of Open Access Journals (Sweden)

    Behroz Karimi

    2013-01-01

    Full Text Available Wet air oxidation is regarded as appropriate options for wastewater treatment with average organic compounds. The general purpose of this research is to determine the efficiency of three wet air oxidation methods, wet oxidation with hydrogen peroxide and absorption with activated carbon in removing organic matter and nitrogenous compounds from Isfahan's urban leachate. A leachate sample with the volume of 1.5 liters entered into a steel reactor with the volume of three liters and was put under a 10-bar pressure, at temperatures of 100, 200, and 300[degree sign] as well as three retention times of 30, 60, and 90 minutes. The sample was placed at 18 stages of leachate storage ponds in Isfahan Compost Plant with the volume of 20 liters, using three WPO, WAO methods and a combination of WAO/GAC for leachate pre-treatment. Thirty percent of pure oxygen and hydrogen peroxide were applied as oxidation agents. The COD removal efficiency in WAO method is 7.8-33.3%, in BOD is 14.7-50.6%, the maximum removal percentage (efficiency for NH4-N is 53.3% and for NO3-N is 56.4-73.9%. The removal efficiency of COD and BOD5 is 4.6%-34 and 24%-50 respectively in WPO method. Adding GAC to the reactor, the removal efficiency of all parameters was improved. The maximum removal efficiency was increased 48% for COD, 31%-43.6 for BOD5 by a combinational method, and the ratio of BOD5/COD was also increased to 90%. In this paper, WAO and WPO process was used for Leachate pre-treatment and WAO/GAC combinational process was applied for improving the organic matter removal and leachate treatment; it was also determined that the recent process is much more efficient in removing resistant organic matter.

  19. The study of leachate treatment by using three advanced oxidation process based wet air oxidation

    Directory of Open Access Journals (Sweden)

    Mokhtari Mehdi

    2013-01-01

    Full Text Available Abstract Wet air oxidation is regarded as appropriate options for wastewater treatment with average organic compounds. The general purpose of this research is to determine the efficiency of three wet air oxidation methods, wet oxidation with hydrogen peroxide and absorption with activated carbon in removing organic matter and nitrogenous compounds from Isfahan's urban leachate. A leachate sample with the volume of 1.5 liters entered into a steel reactor with the volume of three liters and was put under a 10-bar pressure, at temperatures of 100, 200, and 300° as well as three retention times of 30, 60, and 90 minutes. The sample was placed at 18 stages of leachate storage ponds in Isfahan Compost Plant with the volume of 20 liters, using three WPO, WAO methods and a combination of WAO/GAC for leachate pre-treatment. Thirty percent of pure oxygen and hydrogen peroxide were applied as oxidation agents. The COD removal efficiency in WAO method is 7.8-33.3%, in BOD is 14.7-50.6%, the maximum removal percentage (efficiency for NH4-N is 53.3% and for NO3-N is 56.4-73.9%. The removal efficiency of COD and BOD5 is 4.6%-34 and 24%-50 respectively in WPO method. Adding GAC to the reactor, the removal efficiency of all parameters was improved. The maximum removal efficiency was increased 48% for COD, 31%-43.6 for BOD5 by a combinational method, and the ratio of BOD5/COD was also increased to 90%. In this paper, WAO and WPO process was used for Leachate pre-treatment and WAO/GAC combinational process was applied for improving the organic matter removal and leachate treatment; it was also determined that the recent process is much more efficient in removing resistant organic matter.

  20. Enhanced performance of InGaN-based light emitting diodes through a special etch and regrown process in n-GaN layer.

    Science.gov (United States)

    Fu, Binglei; Kang, Junjie; Wei, Tongbo; Liu, Zhiqiang; Liu, Zhe; Liu, Naixin; Xiong, Zhuo; Li, Zhi; Wei, Xuecheng; Lu, Hongxi; Yi, Xiaoyan; Li, Jinmin; Wang, Junxi

    2014-08-25

    We reported that the peak efficiency together with the efficiency droop in InGaN-based light emitting diodes could be effectively modified through a simple and low-cost etch-regrown process in n-GaN layer. The etched n-GaN template contained pyramid arrays with inclined side planes. The following lateral overgrowth process from the etched n-GaN template substantially reduced the edge dislocation density and residential compressive strain in epilayers. The efficiency droop of LED samples thus could be modified due to the reduced polarization field, resulting from the strain relaxation in epilayers. What is more, the peak efficiency and reverse current leakage were also modified due to the reduction of dislocations.

  1. Wet separation processes as method to separate limestone and oil shale

    Science.gov (United States)

    Nurme, Martin; Karu, Veiko

    2015-04-01

    Biggest oil shale industry is located in Estonia. Oil shale usage is mainly for electricity generation, shale oil generation and cement production. All these processes need certain quality oil shale. Oil shale seam have interlayer limestone layers. To use oil shale in production, it is needed to separate oil shale and limestone. A key challenge is find separation process when we can get the best quality for all product types. In oil shale separation typically has been used heavy media separation process. There are tested also different types of separation processes before: wet separation, pneumatic separation. Now oil shale industry moves more to oil production and this needs innovation methods for separation to ensure fuel quality and the changes in quality. The pilot unit test with Allmineral ALLJIG have pointed out that the suitable new innovation way for oil shale separation can be wet separation with gravity, where material by pulsating water forming layers of grains according to their density and subsequently separates the heavy material (limestone) from the stratified material (oil shale)bed. Main aim of this research is to find the suitable separation process for oil shale, that the products have highest quality. The expected results can be used also for developing separation processes for phosphorite rock or all others, where traditional separation processes doesn't work property. This research is part of the study Sustainable and environmentally acceptable Oil shale mining No. 3.2.0501.11-0025 http://mi.ttu.ee/etp and the project B36 Extraction and processing of rock with selective methods - http://mi.ttu.ee/separation; http://mi.ttu.ee/miningwaste/

  2. Design Of A Small-Scale Hulling Machine For Improved Wet-Processed Coffee.

    Directory of Open Access Journals (Sweden)

    Adeleke

    2017-08-01

    Full Text Available The method of primary processing of coffee is a vital determinant of quality and price. Wet processing method produces higher quality beans but is very labourious. This work outlines the design of a small scale cost-effective ergonomic and easily maintained and operated coffee hulling machine that can improve quality and productivity of green coffee beans. The machine can be constructed from locally available materials at a relatively low cost of about NGN 140000.00 with cheap running cost. The beaters are made from rubber strip which can deflect when in contact with any obstruction causing little or no stresses on drum members and reducing the risk of damage to both the beans and machine. The machine is portable and detachable which make it fit to be owned by a group of farmers who can move it from one farm to the other making affordability and running cost easier. The easily affordable and relatively low running cost may be further reduced by the fact that the machine is powered by 3.0 Hp petrol engine which is suitable for other purposes among the rural dwellers. The eventual construction of the machine will encourage more farmers to go into wet processing of coffee and reduce the foreign exchange hitherto lost to this purpose.

  3. Transport and transformation of mercury during wet flue gas cleaning process of nonferrous metal smelting.

    Science.gov (United States)

    Liu, Zhilou; Wang, Dongli; Peng, Bing; Chai, Liyuan; Liu, Hui; Yang, Shu; Yang, Bentao; Xiang, Kaisong; Liu, Cao

    2017-10-01

    Reducing mercury emission is hot topic for international society. The first step for controlling mercury in fuel gas is to investigate mercury distribution and during the flue gas treatment process. The mercury transport and transformation in wet flue gas cleaning process of nonferrous smelting industry was studied in the paper with critical important parameters, such as the solution temperature, Hg0 concentration, SO2 concentration, and Hg2+ concentration at the laboratory scale. The mass ratio of the mercury distribution in the solution, flue gas, sludge, and acid fog from the simulated flue gas containing Hg2+ and Hg0 was 49.12~65.54, 18.34~35.42, 11.89~14.47, and 1.74~3.54%, respectively. The primary mercury species in the flue gas and acid fog were gaseous Hg0 and dissolved Hg2+. The mercury species in the cleaning solution were dissolved Hg2+ and colloidal mercury, which accounted for 56.56 and 7.34% of the total mercury, respectively. Various mercury compounds, including Hg2Cl2, HgS, HgCl2, HgSO4, and HgO, existed in the sludge. These results for mercury distribution and speciation are highly useful in understanding mercury transport and transformation during the wet flue gas cleaning process. This research is conducive for controlling mercury emissions from nonferrous smelting flue gas and by-products.

  4. Fiscal 2000 achievement report on the investigation of alternative gas system and process technologies for dry etching in electronic device manufacturing; 2000 nendo denshi device seizo process de shiyosuru etching gas no daitai gas system oyobi daitai process no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Efforts are made to develop technologies for saving PFC (perfluoro-compound) and conserving energy in semiconductor manufacturing processes, in particular, in the layer insulation film (SiO{sub 2}) dry etching process. Activities are conducted in the five fields of (1) research and development of technologies for reducing the amount of etching gas consumption, (2) development of a dry etching technology using alternative gas, (3) development of a dry etching technology using a low dielectric constant layer insulation film, (4) research and development of novel wiring structures and a method for fabricating the same, and (5) re-entrusted studies. Conducted in field (5) are studies of novel alternative gas - solid sources to substitute PFC, theory design technologies for low dielectric constant organic macromolecules, low dielectric constant material film fabrication by CVD (chemical vapor deposition), and technology for optical wiring inside chips. In field (2), studies are conducted of low GWP (global warming potential) alternative PFC gas aided etching and decomposition prevention technologies for reduction in PFC emissions, and it is made clear that C{sub 4}F{sub 6} performs excellently as an etchant. (NEDO)

  5. A systematic study of the controlled generation of crystalline iron oxide nanoparticles on graphene using a chemical etching process

    Directory of Open Access Journals (Sweden)

    Peter Krauß

    2017-09-01

    Full Text Available Chemical vapor deposition (CVD of carbon precursors employing a metal catalyst is a well-established method for synthesizing high-quality single-layer graphene. Yet the main challenge of the CVD process is the required transfer of a graphene layer from the substrate surface onto a chosen target substrate. This process is delicate and can severely degrade the quality of the transferred graphene. The protective polymer coatings typically used generate residues and contamination on the ultrathin graphene layer. In this work, we have developed a graphene transfer process which works without a coating and allows the transfer of graphene onto arbitrary substrates without the need for any additional post-processing. During the course of our transfer studies, we found that the etching process that is usually employed can lead to contamination of the graphene layer with the Faradaic etchant component FeCl3, resulting in the deposition of iron oxide FexOy nanoparticles on the graphene surface. We systematically analyzed the removal of the copper substrate layer and verified that crystalline iron oxide nanoparticles could be generated in controllable density on the graphene surface when this process is optimized. It was further confirmed that the FexOy particles on graphene are active in the catalytic growth of carbon nanotubes when employing a water-assisted CVD process.

  6. A systematic study of the controlled generation of crystalline iron oxide nanoparticles on graphene using a chemical etching process.

    Science.gov (United States)

    Krauß, Peter; Engstler, Jörg; Schneider, Jörg J

    2017-01-01

    Chemical vapor deposition (CVD) of carbon precursors employing a metal catalyst is a well-established method for synthesizing high-quality single-layer graphene. Yet the main challenge of the CVD process is the required transfer of a graphene layer from the substrate surface onto a chosen target substrate. This process is delicate and can severely degrade the quality of the transferred graphene. The protective polymer coatings typically used generate residues and contamination on the ultrathin graphene layer. In this work, we have developed a graphene transfer process which works without a coating and allows the transfer of graphene onto arbitrary substrates without the need for any additional post-processing. During the course of our transfer studies, we found that the etching process that is usually employed can lead to contamination of the graphene layer with the Faradaic etchant component FeCl 3 , resulting in the deposition of iron oxide Fe x O y nanoparticles on the graphene surface. We systematically analyzed the removal of the copper substrate layer and verified that crystalline iron oxide nanoparticles could be generated in controllable density on the graphene surface when this process is optimized. It was further confirmed that the Fe x O y particles on graphene are active in the catalytic growth of carbon nanotubes when employing a water-assisted CVD process.

  7. Mechanistic modelling of fluidized bed drying processes of wet porous granules: a review.

    Science.gov (United States)

    Mortier, Séverine Thérèse F C; De Beer, Thomas; Gernaey, Krist V; Remon, Jean Paul; Vervaet, Chris; Nopens, Ingmar

    2011-10-01

    Fluidized bed dryers are frequently used in industrial applications and also in the pharmaceutical industry. The general incentives to develop mechanistic models for pharmaceutical processes are listed, and our vision on how this can particularly be done for fluidized bed drying processes of wet granules is given. This review provides a basis for future mechanistic model development for the drying process of wet granules in pharmaceutical processes. It is intended for a broad audience with a varying level of knowledge on pharmaceutical processes and mathematical modelling. Mathematical models are powerful tools to gain process insight and eventually develop well-controlled processes. The level of detail embedded in such a model depends on the goal of the model. Several models have therefore been proposed in the literature and are reviewed here. The drying behaviour of one single granule, a porous particle, can be described using the continuum approach, the pore network modelling method and the shrinkage of the diameter of the wet core approach. As several granules dry at a drying rate dependent on the gas temperature, gas velocity, porosity, etc., the moisture content of a batch of granules will reside in a certain interval. Population Balance Model (ling) (PBM) offers a tool to describe the distribution of particle properties which can be of interest for the application. PBM formulation and solution methods are therefore reviewed. In a fluidized bed, the granules show a fluidization pattern depending on the geometry of the gas inlet, the gas velocity, characteristics of the particles, the dryer design, etc. Computational Fluid Dynamics (CFD) allows to model this behaviour. Moreover, turbulence can be modelled using several approaches: Reynolds-averaged Navier-Stokes Equations (RANS) or Large Eddy Simulation (LES). Another important aspect of CFD is the choice between the Eulerian-Lagrangian and the Eulerian-Eulerian approach. Finally, the PBM and CFD frameworks

  8. Laser process effects on physical texture and wetting in implantable Ti-alloys

    Science.gov (United States)

    Paital, Sameer R.; He, Wei; Daniel, Claus; Dahotre, Narendra B.

    2010-06-01

    Wetting is an important aspect for implantable biomaterials, as it affects the initial interaction with physiological fluids, which in turn dictates the protein adsorption, cell attachment, and tissue integration at the interface. In light of this in the present overview, surface engineering techniques based on laser processing of implantable titanium alloys for improved wettability and cell compatibility is discussed. Here three different laser processing techniques, laser interference patterning, continuous wave laser direct melting, and pulsed laser direct melting and the influence of each type of processing on the micro-texture evolution are studied Finally, the effect of micro-textures on the wettability and thereby its in vitro bioactivity and in vitro biocompatibility is systematically discussed.

  9. Integration of advanced oxidation processes at mild conditions in wet scrubbers for odourous sulphur compounds treatment.

    Science.gov (United States)

    Vega, Esther; Martin, Maria J; Gonzalez-Olmos, Rafael

    2014-08-01

    The effectiveness of different advanced oxidation processes on the treatment of a multicomponent aqueous solution containing ethyl mercaptan, dimethyl sulphide and dimethyl disulphide (0.5 mg L(-1) of each sulphur compound) was investigated with the objective to assess which one is the most suitable treatment to be coupled in wet scrubbers used in odour treatment facilities. UV/H2O2, Fenton, photo-Fenton and ozone treatments were tested at mild conditions and the oxidation efficiency obtained was compared. The oxidation tests were carried out in magnetically stirred cylindrical quartz reactors using the same molar concentration of oxidants (hydrogen peroxide or ozone). The results show that ozone and photo-Fenton are the most efficient treatments, achieving up to 95% of sulphur compounds oxidation and a mineralisation degree around 70% in 10 min. Furthermore, the total costs of the treatments taking into account the capital and operational costs were also estimated for a comparative purpose. The economic analysis revealed that the Fenton treatment is the most economical option to be integrated in a wet scrubber to remove volatile organic sulphur compounds, as long as there are no space constraints to install the required reactor volume. In the case of reactor volume limitation or retrofitting complexities, the ozone and photo-Fenton treatments should be considered as viable alternatives. Copyright © 2014 Elsevier Ltd. All rights reserved.

  10. Chemical etching behaviors of semipolar (11̄22) and nonpolar (11̄20) gallium nitride films.

    Science.gov (United States)

    Jung, Younghun; Baik, Kwang Hyeon; Mastro, Michael A; Hite, Jennifer K; Eddy, Charles R; Kim, Jihyun

    2014-08-14

    Wet chemical etching using hot KOH and H3PO4 solutions was performed on semipolar (11̄22) and nonpolar (11̄20) GaN films grown on sapphire substrates. An alternating KOH/H3PO4/KOH etch process was developed to control the orientation of the facets on the thin-film surface. The initial etch step in KOH produced c- and m-plane facets on the surface of both semipolar (11̄22) and nonpolar (11̄20) GaN thin-films. A second etch step in H3PO4 solution additionally exposed a (̄1̄12̄2) plane, which is chemically stable in H3PO4 solution. By repeating the chemical etch with KOH solution, the m-plane facets as seen in the original KOH etch step were recovered. The etching methods developed in our work can be used to control the surface morphologies of nonpolar and semipolar GaN-based optoelectronic devices such as light-emitting diodes and solar cells.

  11. Terahertz Bandpass Frequency Selective Surfaces on Glass Substrates Using a Wet Micromachining Process

    Science.gov (United States)

    Ramzan, Mehrab; Khan, Talha Masood; Bolat, Sami; Nebioglu, Mehmet Ali; Altan, Hakan; Okyay, Ali Kemal; Topalli, Kagan

    2017-08-01

    This paper presents terahertz (THz) frequency selective surfaces (FSS) implemented on glass substrate using standard microfabrication techniques. These FSS structures are designed for frequencies around 0.8 THz. A fabrication process is proposed where a 100-μm-thick glass substrate is formed through the HF etching of a standard 500-μm-thick low cost glass wafer. Using this fabrication process, three separate robust designs consisting of single-layer FSS are investigated using high-frequency structural simulator (HFSS). Based on the simulation results, the first design consists of a circular ring slot in a square metallic structure on top of a 100-μm-thick Pyrex glass substrate with 70% transmission bandwidth of approximately 0.07 THz, which remains nearly constant till 30° angle of incidence. The second design consists of a tripole structure on top of a 100-μm-thick Pyrex glass substrate with 65% transmission bandwidth of 0.035 THz, which remains nearly constant till 30° angle of incidence. The third structure consists of a triangular ring slot in a square metal on top of a 100-μm-thick Pyrex glass substrate with 70% transmission bandwidth of 0.051 THz, which remains nearly constant up to 20° angle of incidence. These designs show that the reflections from samples can be reduced compared to the conventional sample holders used in THz spectroscopy applications, by using single layer FSS structures manufactured through a relatively simple fabrication process. Practically, these structures are achieved on a fabricated 285-μm-thick glass substrate. Taking into account the losses and discrepancies in the substrate thickness, the measured results are in good agreement with the electromagnetic simulations.

  12. Cryo-Etched Black Silicon for Use as Optical Black

    Science.gov (United States)

    Yee, Karl Y.; White, Victor E.; Mouroulis, Pantazis; Eastwood, Michael L.

    2011-01-01

    Stray light reflected from the surface of imaging spectrometer components in particular, the spectrometer slit degrade the image quality. A technique has been developed for rapid, uniform, and cost-effective black silicon formation based on inductively coupled plasma (ICP) etching at cryogenic temperatures. Recent measurements show less than 1-percent total reflectance from 350 2,500 nm of doped black silicon formed in this way, making it an excellent option for texturing of component surfaces for reduction of stray light. Oxygen combines with SF6 + Si etch byproducts to form a passivation layer atop the Si when the etch is performed at cryogenic temperatures. Excess flow of oxygen results in micromasking and the formation of black silicon. The process is repeatable and reliable, and provides control over etch depth and sidewall profile. Density of the needles can be controlled to some extent. Regions to be textured can be patterned lithographically. Adhesion is not an issue as the nanotips are part of the underlying substrate. This is in contrast to surface growth/deposition techniques such as carbon nanotubes (CNTs). The black Si surface is compatible with wet processing, including processing with solvents, the textured surface is completely inorganic, and it does not outgas. In radiometry applications, optical absorbers are often constructed using gold black or CNTs. This black silicon technology is an improvement for these types of applications.

  13. Process parameter dependent growth phenomena of naproxen nanosuspension manufactured by wet media milling.

    Science.gov (United States)

    Bitterlich, A; Laabs, C; Krautstrunk, I; Dengler, M; Juhnke, M; Grandeury, A; Bunjes, H; Kwade, A

    2015-05-01

    The production of nanosuspensions has proved to be an effective method for overcoming bioavailability challenges of poorly water soluble drugs. Wet milling in stirred media mills and planetary ball mills has become an established top-down-method for producing such drug nanosuspensions. The quality of the resulting nanosuspension is determined by the stability against agglomeration on the one hand, and the process parameters of the mill on the other hand. In order to understand the occurring dependencies, a detailed screening study, not only on adequate stabilizers, but also on their optimum concentration was carried out for the active pharmaceutical ingredient (API) naproxen in a planetary ball mill. The type and concentration of the stabilizer had a pronounced influence on the minimum particle size obtained. With the best formulation the influence of the relevant process parameters on product quality was investigated to determine the grinding limit of naproxen. Besides the well known phenomenon of particle agglomeration, actual naproxen crystal growth and morphology alterations occurred during the process which has not been observed before. It was shown that, by adjusting the process parameters, those effects could be reduced or eliminated. Thus, besides real grinding and agglomeration a process parameter dependent ripening of the naproxen particles was identified to be a concurrent effect during the naproxen fine grinding process. Copyright © 2015 Elsevier B.V. All rights reserved.

  14. Multivariate modelling of the pharmaceutical two-step process of wet granulation and tableting with multiblock partial least squares

    NARCIS (Netherlands)

    Westerhuis, J.A; Coenegracht, P.M J

    1997-01-01

    The pharmaceutical process of wet granulation and tableting is described as a two-step process. Besides the process variables of both steps and the composition variables of the powder mixture, the physical properties of the intermediate granules are also used to model the crushing strength and

  15. Etch bias inversion during EUV mask ARC etch

    Science.gov (United States)

    Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

    2017-07-01

    The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

  16. Development of the Laboratory Anaerobic Bioreactor for Wet and Dry Digestion Processes

    Directory of Open Access Journals (Sweden)

    Rusín Jiří

    2016-12-01

    Full Text Available This article presents partial results of the laboratory development of an anaerobic bioreactor designed for the physical modelling of (semicontinuous dry or wet anaerobic digestion processes. A horizontal cylindrical tank reactor of 0.4 m3 total capacity has been developed. The reactor allows the continuous stirring of a liquid batch or the intermittent stirring of a solid batch. The bioreactor has been used as a lab-scale digestor in the research project dealing with high-solids (dry anaerobic co-digestion organic fraction of mixed municipal solid waste. The first experiment was performed on the mixture of MSW with corn silage (1:1 with the weight of 300 kg.

  17. Carbonation of gypsum from wet flue gas desulfurization process: experiments and modeling.

    Science.gov (United States)

    Tan, Wenyi; Zhang, Zixin; Li, Hongyi; Li, Youxu; Shen, Zewen

    2017-03-01

    In this paper, waste gypsum from wet flue gas desulfurization (WFGD) mixed with NH3·H2O was applied for CO2 absorption in the solid-liquid-gas phase system. The effects of operation temperature, CO2 flow rates, and ammonia-to-gypsum ratio on carbonation process were discussed. Meanwhile, a model for CO2 absorption in the suspension of WFGD gypsum and ammonia was established. The results indicate that higher temperature favors the reaction, and WFGD gypsum conversion can be achieved above 90% even at lower ammonia-to-gypsum ratio, while CO2 conversion reaches 90% and ammonia utilization is up to 83.69%. The model fits well with the experimental results at various CO2 flow rates and predicts the concentration distribution of the main species, including CO2 absorbed, NH2COO(-), and HCO3(-).

  18. Artificial Intelligence Tools for Scaling Up of High Shear Wet Granulation Process.

    Science.gov (United States)

    Landin, Mariana

    2017-01-01

    The results presented in this article demonstrate the potential of artificial intelligence tools for predicting the endpoint of the granulation process in high-speed mixer granulators of different scales from 25L to 600L. The combination of neurofuzzy logic and gene expression programing technologies allowed the modeling of the impeller power as a function of operation conditions and wet granule properties, establishing the critical variables that affect the response and obtaining a unique experimental polynomial equation (transparent model) of high predictability (R2 > 86.78%) for all size equipment. Gene expression programing allowed the modeling of the granulation process for granulators of similar and dissimilar geometries and can be improved by implementing additional characteristics of the process, as composition variables or operation parameters (e.g., batch size, chopper speed). The principles and the methodology proposed here can be applied to understand and control manufacturing process, using any other granulation equipment, including continuous granulation processes. Copyright © 2016 American Pharmacists Association®. Published by Elsevier Inc. All rights reserved.

  19. Integration of Electrodeposited Ni-Fe in MEMS with Low-Temperature Deposition and Etch Processes

    National Research Council Canada - National Science Library

    Giuseppe Schiavone; Jeremy Murray; Richard Perry; Andrew R Mount; Marc P Y Desmulliez; Anthony J Walton

    2017-01-01

    .... In addition, a low temperature deposition and surface micromachining process is presented in which silicon dioxide and silicon nitride are used, respectively, as sacrificial material and structural dielectric...

  20. Development of a Photoelectrochemical Etch Process to Enable Heterogeneous Substrate Integration of Epitaxial III-Nitride Semiconductors

    Science.gov (United States)

    2017-12-01

    transfer of a GaN lasing stack onto a diamond submount. Although GaN liftoff from sapphire has been demonstrated with laser irradiation,1 the physical ... quantum wells6 provides an alternative way to have a light absorber that etches in an electrochemical environment. Approved for public release...sapphire substrates. Applied Physics Letters. 1998;72:599–601. 2. Khare R, Hu EL. Dopant selective photoelectrochemical etching of GaAs homostructures

  1. Microstructural evolution of all-wet-processed CIGS films using Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hee Soo; Choi, Eunmi; Kim, Areum; Pyo, Sung Gyu [School of Integrative Engineering, Chung-Ang University, 221 Heukseok-Dong, Seoul, 156-756 (Korea, Republic of); Yoon, Sung Pil [Fuel Cell Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of)

    2014-08-15

    We report a wet process deposition in order to identify a cost-effective processing scheme for CuIn{sub 1-x}Ga{sub x}Se{sub 2} (CIGS) layers on molybdenum/soda lime glass substrates from a Cu-In-Ga precursor solution. We employed a spin coater at various settings to evaluate the uniformity of the resulting CIGS solar cell layer. After the CIGS precursor film was deposited, we applied a selenization process. In the selenization process, we used a controlled temperature RTA system and compared it to a noncontrolled temperature system. We investigated the morphological properties for different selenization temperature treatments. We used Raman mapping to detect binary compounds and found the binary compound effect on the film. Raman mapping results show that the density of the binary compound in the CIGS layer increased with selenization temperature, and at 600 C, the density of the binary compounds was highest. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Heavy metals in wet method coffee processing wastewater in Soconusco, Chiapas, Mexico.

    Science.gov (United States)

    Siu, Y; Mejia, G; Mejia-Saavedra, J; Pohlan, J; Sokolov, M

    2007-05-01

    One of the driving forces of the economy in southeast Mexico is agriculture. In Soconusco, Chiapas, coffee is one of the main agricultural products and is traded on the international market. Coffee grown in this region is processed using the wet method in order to be commercialized as green coffee. In the beneficio (coffee processing plant) water is an essential resource which is required in great quantities (Matuk et al., 1997; Sokolov, 2002) as it is used to separate good coffee berries from defective ones, as a method of transporting the coffee berries to the processing machinery, in the elimination of the berry husk from the coffee grains (pulping) and finally in the post-fermentation washing process. This process gives rise to one of the smoothest, high-quality coffees available (Zuluaga, 1989; Herrera, 2002). Currently, many producers in Soconusco are opting for ecological coffee production, which has, among its many criteria, human health and environmental protection (Pohlan, 2005). Furthermore, increasing concern during the past few years regarding the production of food that is free from contaminants such as heavy metals, and recent environmental policies in relation to aquatic ecosystem protection, have given rise to questions concerning the quality of water used in coffee processing, as well as pollutants produced by this agroindustry. Water used in the coffee processing plants originates from the main regional rivers whose hydrological basins stretch from the Sierra Madre mountain range down to the coastal plain. As well as providing water, these rivers also receive the wastewater produced during coffee processing (Sokolov, 2002).

  3. A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2014-08-01

    Full Text Available Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV exposure and backside-lift-off (BLO schemes can not only prevent the damage when etching the source/drain (S/D electrodes but also reduce the number of photo-masks required during fabrication and minimize the parasitic capacitance with the decreasing of gate overlap length at same time. Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs exhibit comparable field-effect mobility (9.5 cm2/V·s, threshold voltage (3.39 V, and subthreshold swing (0.3 V/decade. The delay time of an inverter fabricated using the proposed process was considerably decreased.

  4. Fabrication of Light Extraction Efficiency of Organic Light-Emitting Diodes with 3D Aspherical Microlens by Using Dry Etching Process

    Directory of Open Access Journals (Sweden)

    Y. C. Chen

    2013-01-01

    Full Text Available organic light-emitting diode (OLED can enable a greater artificial contrast ratio and viewing angle compared to liquid crystal display (LCD because OLED pixels directly emit light. There is a shortcoming that the internal quantum efficiency can reach values close to 100%, but about 80% light disperses because of the difference among the refractive indices of the substrate, anode, indium tin oxide (ITO film, and air. In this paper, three dimensions aspherical microlens arrays (3D A-MLAs with substrate modifications are developed to simulate the optical luminous field by using FRED software. This study modified parameters of 3D A-MLAs such as the diameter, fill-factor, aspect ratio, dry etching parameters, and electroforming rates of microlens to improve the extraction efficiency of the OLED. In dry etching, not only the aspect ratio with better extraction rate can be obtained by reactive ion etching (RIE dry etching, but also an undercutting phenomenon can be avoided. The dimensions of 3D A-MLAs can be accurately controlled in the electroforming process used to make a nickel-cobalt (Ni-Co metal mold to achieve the designed dimensions. According to the measured results, the average luminance efficacy of the OLEDs with 3D A-MLAs can be enhanced.

  5. Laboratory-scale dry/wet-milling process for the extraction of starch and gluten from wheat

    NARCIS (Netherlands)

    Steeneken, P.A.M.; Helmens, H.J.

    2009-01-01

    A laboratory-scale process is presented for the manufacture of starch and gluten from wheat. Main feature of this process is that whole wheat kernels are crushed dry between smooth rolls prior to wet disintegration in excess water in such way that gluten formation is prevented and fibres can be

  6. INVESTIGATION ON UTILITY OF PLASTIC WASTE AS AN ADDITIVE FOR BITUMINOUS CONCRETE USING WET PROCESS OF MIXING

    Directory of Open Access Journals (Sweden)

    Anurag Virendra Tiwari

    2017-12-01

    Full Text Available Purpose. Plastic waste has become a major environmental issue of concern due to its exponential growth due to rapid urbanization. The paper investigates utility of plastic waste as an additive for bituminous concrete using wet process of mixing. Methodology. The methodology for the present paper has been designed with complex research consisting of Marshall mix design of the bituminous mix added with plastic waste for modifying bitumen using wet process of mixing, performing the tests on the samples and analyzing the results in the form of table and figures. In the present paper LDPE and HDPE type of plastic waste are used to modify the bitumen. Finding. The results show that addition of 6 percent of bitumen improves the Marshall properties of the mix. Use of plastic to modify the bitumen not only makes the road surface more durable but also it is an eco-friendly way of proper disposal of plastic waste. Originality. The processes used for mixing the plastic waste to the bitumen are dry process and wet process. Dry process of mixing the plastic waste to the bituminous mix is most common and lot of study is carried out on its application. In the present paper wet process of mixing has not yet been studied much. Practical Value. The practical application of utilizing the plastic waste to modify bitumen in the bituminous mix improves the stability values resulting in the more durable road surface. Also the method ensures the proper disposal of plastic waste in eco-friendly way.

  7. Anisotropic Etching Using Reactive Cluster Beams

    Science.gov (United States)

    Koike, Kunihiko; Yoshino, Yu; Senoo, Takehiko; Seki, Toshio; Ninomiya, Satoshi; Aoki, Takaaki; Matsuo, Jiro

    2010-12-01

    The characteristics of Si etching using nonionic cluster beams with highly reactive chlorine-trifluoride (ClF3) gas were examined. An etching rate of 40 µm/min or higher was obtained even at room temperature when a ClF3 molecular cluster was formed and irradiated on a single-crystal Si substrate in high vacuum. The etching selectivity of Si with respect to a photoresist and SiO2 was at least 1:1000. We also succeeded in highly anisotropic etching with an aspect ratio of 10 or higher. Moreover, this etching method has a great advantage of low damage, compared with the conventional plasma process.

  8. Double-layer optical fiber coating analysis in MHD flow of an elastico-viscous fluid using wet-on-wet coating process

    Science.gov (United States)

    Khan, Zeeshan; Islam, Saeed; Shah, Rehan Ali; Khan, Muhammad Altaf; Bonyah, Ebenezer; Jan, Bilal; Khan, Aurangzeb

    Modern optical fibers require a double-layer coating on the glass fiber in order to provide protection from signal attenuation and mechanical damage. The most important plastic resins used in wires and optical fibers are plastic polyvinyl chloride (PVC) and low and high density polyethylene (LDPE/HDPE), nylon and Polysulfone. One of the most important things which affect the final product after processing is the design of the coating die. In the present study, double-layer optical fiber coating is performed using melt polymer satisfying Oldroyd 8-constant fluid model in a pressure type die with the effect of magneto-hydrodynamic (MHD). Wet-on-wet coating process is applied for double-layer optical fiber coating. The coating process in the coating die is modeled as a simple two-layer Couette flow of two immiscible fluids in an annulus with an assigned pressure gradient. Based on the assumptions of fully developed laminar and MHD flow, the Oldroyd 8-constant model of non-Newtonian fluid of two immiscible resin layers is modeled. The governing nonlinear equations are solved analytically by the new technique of Optimal Homotopy Asymptotic Method (OHAM). The convergence of the series solution is established. The results are also verified by the Adomian Decomposition Method (ADM). The effect of important parameters such as magnetic parameter Mi , the dilatant constant α , the Pseodoplastic constant β , the radii ratio δ , the pressure gradient Ω , the speed of fiber optics V , and the viscosity ratio κ on the velocity profiles, thickness of coated fiber optics, volume flow rate, and shear stress on the fiber optics are investigated. At the end the result of the present work is also compared with the experimental results already available in the literature by taking non-Newtonian parameters tends to zero.

  9. Preface: Special Topic on Atomic and Molecular Layer Processing: Deposition, Patterning, and Etching

    Science.gov (United States)

    Engstrom, James R.; Kummel, Andrew C.

    2017-02-01

    Thin film processing technologies that promise atomic and molecular scale control have received increasing interest in the past several years, as traditional methods for fabrication begin to reach their fundamental limits. Many of these technologies involve at their heart phenomena occurring at or near surfaces, including adsorption, gas-surface reactions, diffusion, desorption, and re-organization of near-surface layers. Moreover many of these phenomena involve not just reactions occurring under conditions of local thermodynamic equilibrium but also the action of energetic species including electrons, ions, and hyperthermal neutrals. There is a rich landscape of atomic and molecular scale interactions occurring in these systems that is still not well understood. In this Special Topic Issue of The Journal of Chemical Physics, we have collected recent representative examples of work that is directed at unraveling the mechanistic details concerning atomic and molecular layer processing, which will provide an important framework from which these fields can continue to develop. These studies range from the application of theory and computation to these systems to the use of powerful experimental probes, such as X-ray synchrotron radiation, probe microscopies, and photoelectron and infrared spectroscopies. The work presented here helps in identifying some of the major challenges and direct future activities in this exciting area of research involving atomic and molecular layer manipulation and fabrication.

  10. Process Analytical Technology for High Shear Wet Granulation: Wet Mass Consistency Reported by In-Line Drag Flow Force Sensor Is Consistent With Powder Rheology Measured by At-Line FT4 Powder Rheometer.

    Science.gov (United States)

    Narang, Ajit S; Sheverev, Valery; Freeman, Tim; Both, Douglas; Stepaniuk, Vadim; Delancy, Michael; Millington-Smith, Doug; Macias, Kevin; Subramanian, Ganeshkumar

    2016-01-01

    Drag flow force (DFF) sensor that measures the force exerted by wet mass in a granulator on a thin cylindrical probe was shown as a promising process analytical technology for real-time in-line high-resolution monitoring of wet mass consistency during high shear wet granulation. Our previous studies indicated that this process analytical technology tool could be correlated to granulation end point established independently through drug product critical quality attributes. In this study, the measurements of flow force by a DFF sensor, taken during wet granulation of 3 placebo formulations with different binder content, are compared with concurrent at line FT4 Powder Rheometer characterization of wet granules collected at different time points of the processing. The wet mass consistency measured by the DFF sensor correlated well with the granulation's resistance to flow and interparticulate interactions as measured by FT4 Powder Rheometer. This indicated that the force pulse magnitude measured by the DFF sensor was indicative of fundamental material properties (e.g., shear viscosity and granule size/density), as they were changing during the granulation process. These studies indicate that DFF sensor can be a valuable tool for wet granulation formulation and process development and scale up, as well as for routine monitoring and control during manufacturing. Copyright © 2016. Published by Elsevier Inc.

  11. Conceptual Biorefinery Design and Research Targeted for 2022: Hydrothermal Liquefacation Processing of Wet Waste to Fuels

    Energy Technology Data Exchange (ETDEWEB)

    Snowden-Swan, Lesley J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Zhu, Yunhua [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Bearden, Mark D. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Seiple, Timothy E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Jones, Susanne B. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Schmidt, Andrew J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Billing, Justin M. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Hallen, Richard T. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Hart, Todd R. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Liu, Jian [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Albrecht, Karl O. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Fox, Samuel P. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Maupin, Gary D. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Elliott, Douglas C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2017-12-28

    The Department of Energy Bioenergy Technologies Office (BETO) invests in research and development of new pathways for commercially viable conversion of biomass into drop-in ready transportation fuels, fuel blendstocks and products. The primary emphasis has been on terrestrial and algae feedstocks, but more recently BETO has begun to explore the potential of wet wastes for biofuel production, with focus on wastewater residuals, manure, food waste, and fats, oils and grease. A recent resource analysis estimates that 77 million dry tons per year of these wastes are generated annually, 65% of which are underutilized for any beneficial purpose. Approximately 14 million dry tons of the total resource is wastewater residuals (sludge and biosolids) generated at the nation’s wastewater treatment plants (WWTPs). Conversion of this resource into transportation fuels could significantly contribute to the creation of a new domestic bioenergy and bioproduct industry, while providing an economically and environmentally sustainable alternative for current waste disposal practices. Hydrothermal liquefaction (HTL) is a process that uses hot, pressurized water in the condensed phase to convert biomass to a thermally stable oil product, also known as “biocrude”, which can then be thermo-catalytically upgraded to hydrocarbon fuel blendstocks. HTL is conceptually simple, has a high carbon efficiency, and can be applied to a wide range of wet feedstocks at similar processing conditions. The purpose of this report is to document the conceptual design, economics and supporting data for a sludge-to-fuel pathway via HTL and biocrude upgrading. The configuration includes a HTL plant that is co-located with a WWTP and a larger scale biocrude upgrading plant for production of hydrocarbon fuel blendstocks. Experimental data from bench scale testing of a 1:1 mixture of primary:secondary sludges are used to establish the economic and technical assumptions for the analysis. The design

  12. Monitoring of inner wall condition in mass-production plasma etching process using a load impedance monitoring system

    Science.gov (United States)

    Kasashima, Yuji; Kurita, Hiroyuki; Kimura, Naoya; Ando, Akira; Uesugi, Fumihiko

    2015-06-01

    This work describes the detection of changes in the inner wall condition of mass-production plasma etching equipment using a load impedance monitoring system. The system detects the change in the imaginary part of the load impedance from a 50-Ω transmission line when the inner wall condition changes following exposure to the atmosphere. The results demonstrate that the system can be used as a practical method for real-time and noninvasive monitoring of the wall condition of etching chambers. This method will contribute to improvements in production yield and overall equipment effectiveness, and the development of predictive maintenance in semiconductor manufacturing.

  13. Kinetic parameters of biomass growth in a UASB reactor treating wastewater from coffee wet processing (WCWP

    Directory of Open Access Journals (Sweden)

    Claudio Milton Montenegro Campos

    2014-10-01

    Full Text Available This study evaluated the treatment of wastewater from coffee wet processing (WCWP in an anaerobic treatment system at a laboratory scale. The system included an acidification/equalization tank (AET, a heat exchanger, an Upflow Anaerobic Sludge Blanket Reactor (UASB, a gas equalization device and a gas meter. The minimum and maximum flow rates and volumetric organic loadings rate (VOLR were 0.004 to 0.037 m 3 d -1 and 0.14 to 20.29 kgCOD m -3 d -1 , respectively. The kinetic parameters measured during the anaerobic biodegradation of the WCWP, with a minimal concentration of phenolic compounds of 50 mg L - ¹, were: Y = 0.37 mgTVS (mgCODremoved -1 , Kd = 0.0075 d-1 , Ks = 1.504mg L -1 , μmax = 0.2 d -1 . The profile of sludge in the reactor showed total solids (TS values from 22,296 to 55,895 mg L -1 and TVS 11,853 to 41,509 mg L -1 , demonstrating a gradual increase of biomass in the reactor during the treatment, even in the presence of phenolic compounds in the concentration already mentioned.

  14. Treatment of biomass gasification wastewater using a combined wet air oxidation/activated sludge process

    Energy Technology Data Exchange (ETDEWEB)

    English, C.J.; Petty, S.E.; Sklarew, D.S.

    1983-02-01

    A lab-scale treatability study for using thermal and biological oxidation to treat a biomass gasification wastewater (BGW) having a chemical oxygen demand (COD) of 46,000 mg/l is described. Wet air oxidation (WA0) at 300/sup 0/C and 13.8 MPa (2000 psi) was used to initially treat the BGW and resulted in a COD reduction of 74%. This was followed by conventional activated sludge treatment using operating conditions typical of municipal sewage treatment plants. This resulted in an additional 95% COD removal. Overall COD reduction for the combined process was 99%. A detailed chemical analysis of the raw BGW and thermal and biological effluents was performed using gas chromatography/mass spectrometry (GC/MS). These results showed a 97% decrease in total extractable organics with WA0 and a 99.6% decrease for combined WA0 and activated sludge treatment. Components of the treated waters tended to be fewer in number and more highly oxidized. An experiment was conducted to determine the amount of COD reduction caused by volatilization during biological treatment. Unfortunately, this did not yield conclusive results. Treatment of BGW using WA0 followed by activated sludge appears to be very effective and investigations at a larger scale are recommended.

  15. Role of Magnesium Silicates in Wet-Kneaded Silica-Magnesia Catalysts for the Lebedev Ethanol-to-Butadiene Process

    NARCIS (Netherlands)

    Chung, Sangho; Angelici, Carlo; Hinterding, Stijn O. M.; Weingarth, Markus; Baldus, Marc; Houben, Klaartje; Weckhuysen, Bert M.; Bruijnincx, Pieter C. A.

    Wet-kneading is a technique commonly used for the synthesis of SiO2–MgO catalysts for the Lebedev ethanol-to-butadiene process, with catalyst performance known to depend heavily on the preparation parameters used in this method. Here, the large influence of Mg precursor and MgO content on

  16. Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O2/CHF3 gas plasma

    Science.gov (United States)

    Ham, Yong-Hyun; Shutov, Dmitriy Alexandrovich; Kwon, Kwang-Ho

    2013-05-01

    We investigated the effectiveness of CHF3 admixture in O2 plasma for a low damage patterning process. We used inductively-coupled plasma (ICP) etching of parylene-C thin films with O2/CHF3 gas mixtures. Plasma diagnostics were performed by using a double Langmuir probe. Also in order to examine the relationship between the plasma and surface energy, we attempted to conduct a simplified model-based analysis of the CHF3/O2 plasma. The surface energy decreased as the admixture fraction increased with fluorocarbon containing gas. The decreased surface energy is related to the functional groups of CFx polymer at binding energy of around 290 eV and low ion physical damage. We observed that a small addition of CHF3 to O2 plasma produced a high etch rate, low surface energy, and low roughness compared to pure oxygen plasma.

  17. Crystallographic dependence of the lateral undercut wet etch rate of Al0.5In0.5P in diluted HCl for III-V sacrificial release

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Semenova, Elizaveta; Yvind, Kresten

    2013-01-01

    The authors investigated the use of InAlP as a sacrificial layer lattice-matched to GaAs when diluted hydrochloric acid is used for sacrificial etching. They show that InAlP can be used to fabricate submicrometer air gaps in micro-opto-electro-mechanical systems and that a selectivity toward Ga...

  18. Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes

    Energy Technology Data Exchange (ETDEWEB)

    Lavrova, Olga [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials; Balakrishnan, Ganesh [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials

    2017-02-24

    The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).

  19. Etching patterns on the micro‐ and nanoscale

    DEFF Research Database (Denmark)

    Michael-Lindhard, Jonas; Herstrøm, Berit; Stöhr, Frederik

    2014-01-01

    and polymer injection molding. High precision patterns of, for instance microfluidic devices, are etched intosilicon which is then electroplated with nickel that will serve as a stamp in the polymer injection molding tool where thousands of devices may be replicated. In addition to silicon and its derived......, materials and depths. With the dry etchtools available in the cleanroom at DTU‐Danchip, the etching of a great variety of materials may be tunedvery precisely from a purely chemical and isotropic etch to a purely physical and anisotropic etch.The dry etching of silicon is the most flexible and well......‐established process that enables the users of our lab to realize devices on any scale in the sub 100 nm to the sub 1 mm range. The silicon compound refractive lenses (see left figure) for focusing hard X‐rays from a synchrotron source are examples of etch processes with extreme specifications. In order to focus the X...

  20. SAXS study on the morphology of etched and un-etched ion tracks in apatite

    Directory of Open Access Journals (Sweden)

    Nadzri A.

    2015-01-01

    Full Text Available Natural apatite samples were irradiated with 185 MeV Au and 2.3 GeV Bi ions to simulate fission tracks. The resulting track morphology was investigated using synchrotron small angle x-ray scattering (SAXS measurements before and after chemical etching. We present preliminary results from the SAXS measurement showing the etching process is highly anisotropic yielding faceted etch pits with a 6-fold symmetry. The measurements are a first step in gaining new insights into the correlation between etched and unetched fission tracks and the use of SAXS as a tool for studying etched tracks.

  1. Dry etching technologies for reflective multilayer

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  2. A wet-chemical approach to perovskite and fluorite-type nanoceramics: synthesis and processing

    NARCIS (Netherlands)

    Veldhuis, Sjoerd

    2015-01-01

    In thesis the low-temperature, wet-chemical approach to various functional inorganic oxide materials is described. The main focus of this research is to control the material’s synthesis from liquid precursor to metal oxide powder or thin film; while understanding its formation mechanism. In

  3. Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

    Science.gov (United States)

    Li, Kun-Dar; Miao, Jin-Ru

    2018-02-01

    To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

  4. Application of a bio-binder as a rejuvenator for wet processed asphalt shingles in pavement construction

    OpenAIRE

    OLDHAM, Daniel J.; Ellie H. Fini; Chailleux, Emmanuel

    2015-01-01

    This paper investigates the merits of application of bio-binder to enhance rheological properties of asphalt binder in the presence of wet processed recycled asphalt shingles (RAS). It will further examine the performance and workability of asphalt designed with and without a specified percentage of a bio-binder produced from swine manure and RAS. Bio-binder was introduced to liquid asphalt binder modified with four different percentages of RAS; the high and low temperature properties of each...

  5. A double stage dry-wet-fermentation process for a fast and safe digestion of different kinds of organic material

    Energy Technology Data Exchange (ETDEWEB)

    Busch, G.; Sieber, M.; Buschmann, J.; Burkhardat, M.

    2009-07-01

    The fermentation of organic material is a four-step-process. It is admissible to merge the first two steps (hydrolysis and acidification) to hydrolysis in general and the last two steps (aceto genesis and methano genesis) to methano genesis. The Brandenburg University of Technology in Cottbus has devised a double stage dry-wet-fermentation process for fast and safe anaerobic degradation. Using these processes, it is possible to decompose different kinds of organic material like renewable material (e. g. maize silage), waste (e. g. household-waste) and industrial material (e. g. glycerine). (Author)

  6. Copper-assisted, anti-reflection etching of silicon surfaces

    Science.gov (United States)

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  7. Fabrication of combined-scale nano- and microfluidic polymer systems using a multilevel dry etching, electroplating and molding process

    DEFF Research Database (Denmark)

    Tanzi, Simone; Østergaard, Peter Friis; Matteucci, Marco

    2012-01-01

    Microfabricated single-cell capture and DNA stretching devices have been produced by injection molding. The fabrication scheme employed deep reactive ion etching in a silicon substrate, electroplating in nickel and molding in cyclic olefin polymer. This work proposes technical solutions...... to fabrication challenges associated with chip sealing and demolding of polymer high-volume replication methods. UV-assisted thermal bonding was found to ensure a strong seal of the microstructures in the molded part without altering the geometry of the channels. In the DNA stretching device, a low aspect ratio...

  8. Solar collectors. Technical progress report No. 1, September 5, 1978-March 5, 1979. [Listing of glazings, housing materials, acrylic coatings, etching processes and AR coatings

    Energy Technology Data Exchange (ETDEWEB)

    Baum, B.; Gage, M.

    1979-04-27

    A broad information search was carried out in four areas: glazings, housing materials, acrylic coatings, etching processes and AR coatings. An extensive list of all (known) US transparent polymers was developed as well as tables of plastic, ceramic and metallic materials that could conceivably function as a housing. In addition, a compilation was made of commercially available solvent and water-base acrylic coatings for use as a uv protective coating for the glazing. Eighteen transparent polymers were chosen as possible glazings and twelve materials (plastic and wood) as possible housings and exposed in the Weather-Ometer as tensile bars and for the glazings as disks for optical transmission. These same materials were also exposed on our roof to monitor soiling. A variety of solvent and water-base acrylics were selected as protective coatings and ordered. Two commercial films - Tedlar 20 and Halar 500 - with strong absorption in the uv and two commercial films containing uv absorbers - Tedlar UT and Korad 201R - were laminated by several different processes to four promising glazing materials: polyvinyl fluoride (Tedlar), polymethyl methacrylate (Plexiglass), crosslinked ethylene/vinyl acetate and thermoplastic polyester (Llumar). A variety of etching processes were briefly explored and AR coating studies started on the above four glazing films.

  9. Low surface damage dry etched black silicon

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt

    2017-01-01

    power, during reactive ion etching at non-cryogenic temperature (-20°C), preserves the reflectivity below 1% and improves the effective minority carrier lifetime due to reduced ion energy. We investigate the effect of the etching process on the surface morphology, light trapping, reflectance...

  10. Effect of surfactants or a water soluble polymer on the crystal transition of clarithromycin during a wet granulation process.

    Science.gov (United States)

    Nozawa, Kenji; Iwao, Yasunori; Noguchi, Shuji; Itai, Shigeru

    2015-11-10

    To generate products containing a stable form of clarithromycin (CAM) (form II) regardless of the initial crystal form of CAM or type of granulation solvent, the effects of five surfactants, or a water-soluble polymer (macrogol 400) were determined on the crystal transition of CAM. The metastable form (form I) was kneaded with water, after adding surfactants, or a water-soluble polymer. Form II was also kneaded with ethanol, after adding the same additives. The resulting samples were analyzed by powder X-ray diffraction. Form I was completely converted to form II by a wet granulation using water with additives bearing polyoxyethylene chains such as polysorbate 80 (PS80), polyoxyl 40 stearate or macrogol 400. The granulation of the form II using ethanol with these additives did not result in a crystal transition to form I. Furthermore, CAM tablets were manufactured using granules with PS80, and these crystal forms and dissolution behaviors were investigated. As a result, the wet granulation of CAM with PS80 gave CAM tablets containing only form II and PS80 did not have any adverse effects on tablet characteristics. Therefore, these data suggests that the crystal form of CAM can be controlled to be form II using a wet granulation process with additives bearing polyoxyethylene chains regardless of the initial crystal form of CAM or type of granulation solvent. Copyright © 2015 Elsevier B.V. All rights reserved.

  11. TOPICAL REVIEW: Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

    Science.gov (United States)

    Jansen, H V; de Boer, M J; Unnikrishnan, S; Louwerse, M C; Elwenspoek, M C

    2009-03-01

    An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O2) or a fluorocarbon (FC) gas (C4F8 or CHF3). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication of directional profiles, pulsed-mode DRIE is far easier to handle, is more robust with respect to the pattern layout and has the potential of achieving much higher mask etch selectivity, whereas in a mixed-mode the etch rate is higher and sidewall scalloping is prohibited. It is found that both pulsed-mode CHF3 and C4F8 are perfectly suited to perform high speed directional etching, although they have the drawback of leaving the FC residue at the sidewalls of etched structures. They show an identical result when the flow of CHF3 is roughly 30 times the flow of C4F8, and the amount of gas needed for a comparable result decreases rapidly while lowering the temperature from room down to cryogenic (and increasing the etch rate). Moreover, lowering the temperature lowers the mask erosion rate substantially (and so the mask selectivity improves). The pulsed-mode O2 is FC-free but shows only tolerable anisotropic results at -120 °C. The

  12. High-optical-quality ferroelectric film wet-processed from a ferroelectric columnar liquid crystal as observed by non-linear-optical microscopy.

    Science.gov (United States)

    Araoka, Fumito; Masuko, Shiori; Kogure, Akinori; Miyajima, Daigo; Aida, Takuzo; Takezoe, Hideo

    2013-08-07

    The self-organization of ferroelectric columnar liquid crystals (FCLCs) is demonstrated. Columnar order is spontaneously formed in thin films made by the wet-process due to its liquid crystallinity. Electric-field application results in high optical quality and uniform spontaneous polarization. Such good processability and controllability of the wet-processed FCLC films provide us with potential organic ferroelectric materials for device applications. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. The combined effect of wet granulation process parameters and dried granule moisture content on tablet quality attributes.

    Science.gov (United States)

    Gabbott, Ian P; Al Husban, Farhan; Reynolds, Gavin K

    2016-09-01

    A pharmaceutical compound was used to study the effect of batch wet granulation process parameters in combination with the residual moisture content remaining after drying on granule and tablet quality attributes. The effect of three batch wet granulation process parameters was evaluated using a multivariate experimental design, with a novel constrained design space. Batches were characterised for moisture content, granule density, crushing strength, porosity, disintegration time and dissolution. Mechanisms of the effect of the process parameters on the granule and tablet quality attributes are proposed. Water quantity added during granulation showed a significant effect on granule density and tablet dissolution rate. Mixing time showed a significant effect on tablet crushing strength, and mixing speed showed a significant effect on the distribution of tablet crushing strengths obtained. The residual moisture content remaining after granule drying showed a significant effect on tablet crushing strength. The effect of moisture on tablet tensile strength has been reported before, but not in combination with granulation parameters and granule properties, and the impact on tablet dissolution was not assessed. Correlations between the energy input during granulation, the density of granules produced, and the quality attributes of the final tablets were also identified. Understanding the impact of the granulation and drying process parameters on granule and tablet properties provides a basis for process optimisation and scaling. Copyright © 2016 Elsevier B.V. All rights reserved.

  14. A String Model Etching Algorithm

    Science.gov (United States)

    1979-10-18

    simulator, and especially to T. Van Duzer , who has provided continuous encouragement, suggestions, and computer funds. References [1] A.R...Neureuther, R.E. Jewett, P.I. Hagouel and T. Van Duzer , "Surface Etching Simula- tion and Applications in IC Processing", Kodak Microelectronics Seminar

  15. Tailoring Wet Explosion Process Parameters for the Pretreatment of Cocksfoot Grass for High Sugar Yields

    DEFF Research Database (Denmark)

    Njoku, Stephen Ikechukwu; Ahring, Birgitte Kiær; Uellendahl, Hinrich

    2013-01-01

    glucose release with low formation of by-products. Under these conditions, the cellulose and hemicellulose sugar recovery was 94 % and 70 %, respectively. The efficiency of the enzymatic hydrolysis of cellulose under these conditions was 91 %. On the other hand, the release of pentose sugars was higher......The pretreatment of lignocellulosic biomass is crucial for efficient subsequent enzymatic hydrolysis and ethanol fermentation. In this study, wet explosion (WEx) pretreatment was applied to cocksfoot grass and pretreatment conditions were tailored for maximizing the sugar yields using response...... when applying less severe pretreatment conditions C (160 °C, 5 min, 0.2 % dilute sulfuric acid). Therefore, the choice of the most suitable pretreatment conditions is depending on the main target product, i.e., hexose or pentose sugars....

  16. Two-Dimensional Si-Nanodisk Array Fabricated Using Bio-Nano-Process and Neutral Beam Etching for Realistic Quantum Effect Devices

    Science.gov (United States)

    Huang, Chi-Hsien; Igarashi, Makoto; Woné, Michel; Uraoka, Yukiharu; Fuyuki, Takashi; Takeguchi, Masaki; Yamashita, Ichiro; Samukawa, Seiji

    2009-04-01

    A high-density, large-area, and uniform two-dimensional (2D) Si-nanodisk array was successfully fabricated using the bio-nano-process, advanced etching techniques, including a treatment using nitrogen trifluoride and hydrogen radical (NF3 treatment) and a damage-free chlorine neutral beam (NB). By using the surface oxide formed by neutral beam oxidation (NBO) for the preparation of a 2D nanometer-sized iron core array as an etching mask, a well-ordered 2D Si-nanodisk array was obtained owing to the dangling bonds of the surface oxide. By changing the NF3 treatment time without changing the quantum effect of each nanodisk, we could control the gap between adjacent nanodisks. A device with two electrodes was fabricated to investigate the electron transport in a 2D Si-nanodisk array. Current fluctuation and time-dependent currents were clearly observed owing to the charging-discharging of the nanodisks adjacent to the current percolation path. The new structure may have great potential for future novel quantum effect devices.

  17. Density improvement of Li{sub 2}TiO{sub 3} pebbles fabricated by wet process

    Energy Technology Data Exchange (ETDEWEB)

    Tsuchiya, K.; Kawamura, H. [Japan Atomic Energy Research Inst., Oarai, Ibaraki (Japan). Oarai Research Establishment; Fuchinoue, K.; Sawada, H.; Watarumi, K.

    1998-03-01

    Lithium titanate (Li{sub 2}TiO{sub 3}) has attracted the attention of many researchers from a point of tritium recovery at low temperature, chemical stability, etc.. The application of small Li{sub 2}TiO{sub 3} sphere has been proposed in some designs of fusion blanket. On the other hand, the wet process is most advantageous as the fabrication method of Li{sub 2}TiO{sub 3} pebbles from a point of mass production, and of reprocessing necessary for effective use of resources and reduction of radioactive wastes. In the preliminary fabrication test, density of Li{sub 2}TiO{sub 3} pebbles was about 40%T.D.. Therefore, in this study, density improvement tests and preliminary characterization of Li{sub 2}TiO{sub 3} pebbles by wet process were performed, noting the aging condition and sintering condition in the fabrication process of the gel-spheres. This study yielded Li{sub 2}TiO{sub 3} pebbles in target range of 80-85%T.D.. (author)

  18. A compact process for the treatment of olive mill wastewater by combining wet hydrogen peroxide catalytic oxidation and biological techniques

    Energy Technology Data Exchange (ETDEWEB)

    Azabou, Samia [Laboratoire des BioProcedes, Centre de Biotechnologie de Sfax, BP 1177, 3018 Sfax (Tunisia); Najjar, Wahiba [Laboratoire de Chimie des Materiaux et Catalyse, Faculte des Sciences de Tunis, Campus Universitaire, 2092 Tunis (Tunisia); Bouaziz, Mohamed [Laboratoire des BioProcedes, Centre de Biotechnologie de Sfax, BP 1177, 3018 Sfax (Tunisia); Ghorbel, Abdelhamid [Laboratoire de Chimie des Materiaux et Catalyse, Faculte des Sciences de Tunis, Campus Universitaire, 2092 Tunis (Tunisia); Sayadi, Sami, E-mail: sami.sayadi@cbs.rnrt.tn [Laboratoire des BioProcedes, Centre de Biotechnologie de Sfax, BP 1177, 3018 Sfax (Tunisia)

    2010-11-15

    A system based on combined actions of catalytic wet oxidation and microbial technologies for the treatment of highly polluted OMW containing polyphenols was studied. The wet hydrogen peroxide catalytic oxidation (WHPCO) process has been investigated in the semi-batch mode at atmospheric pressure, using aluminium-iron-pillared inter layer clay ((Al-Fe)PILC), under two different catalytic processes: ((Al-Fe)PILC/H{sub 2}O{sub 2}/ultraviolet radiations) at 25 deg. C and ((Al-Fe)PILC/H{sub 2}O{sub 2}) at 50 deg. C. The results show that raw OMW was resistant to the photocatalytic process. However ((Al-Fe)PILC/H{sub 2}O{sub 2}), system operating at 50 deg. C reduced considerably the COD, colour and total phenolic contents, and thus decreased the inhibition of the marine photobacteria Vibrio fischeri luminescence by 70%. This study also examined the feasibility of coupling WHPCO and anaerobic digestion treatment. Biomethanisation experiments performed with raw OMW or pre-treated OMW proved that pre-treatments with ((Al-Fe)PILC/H{sub 2}O{sub 2}) system, for more than 2 h, resulted in higher methane production. Both untreated OMW as well as 2-h pre-treated OMW revealed as toxic to anaerobic bacteria.

  19. Sacrificial structures for deep reactive ion etching of high-aspect ratio kinoform silicon x-ray lenses

    DEFF Research Database (Denmark)

    Stöhr, Frederik; Michael-Lindhard, Jonas; Hübner, Jörg

    2015-01-01

    investigated how sacrificial structures in the form of guarding walls and pillars may be utilized to facilitate accurate control of the etch profile. Unlike other sacrificial structuring approaches, no silicon-on-insulator substrates or multiple lithography steps are required. In addition, the safe removal...... of the sacrificial structures was accomplished by thermal oxidation and subsequent selective wet etching. The effects of the dimensions and relative placement of sacrificial walls and pillars on the etching result were determined through systematic experiments. The authors applied this process for exact sidewall...... control in the manufacture of x-ray lenses that are very sensitive to sidewall shape nonuniformities. Compound kinoform lenses for focusing hard x-rays with structure heights of 200 lm were manufactured, and the lenses were tested in terms of their focusing ability and refracting qualities using...

  20. Microfabrication of a scanning probe with NV centers in a selectively grown diamond thin film through a xenon difluoride etching process

    Science.gov (United States)

    Zhu, Minjie; Li, Jinhua; Toda, Masaya; Ono, Takahito

    2017-12-01

    A scanning probe with nitrogen vacancy (NV) centers in diamond thin film was fabricated via a standard micro/nano electromechanical system process. The diamond thin film was selectively grown by microwave plasma enhanced chemical vapor deposition on a partially nucleated silicon surface. NV centers are embedded during the diamond growth with a pure nitrogen gas flow to the growth chamber. The existence of NV centers in the diamond thin film was confirmed by photoluminescence measurements. In addition, we found that a xenon difluoride (XeF2) etching process and anneal treatment have an influence on the existence of NV centers in the diamond. The fabricated scanning probe with NV centers in diamond thin film can be used as a magnetic scanning sensor. It is anticipated that the alternative method of selectively growing diamond thin film provides various diamond structures in diverse applications.

  1. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Ji, J [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Tay, F E H [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Miao Jianmin [MicroMachines Center, School of Mechanical and Aerospace Engineering, Nanyang Technologica l University, 50 Nanyang Avenue, 639798 (Singapore); Sun Jianbo [MicroMachines Center, School of Mechanical and Aerospace Engineering, Nanyang Technologica l University, 50 Nanyang Avenue, 639798 (Singapore)

    2006-04-01

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions.

  2. Wet-chemical nanoscale patterning of GaAs surfaces using atomic force microscope lithography

    Science.gov (United States)

    Klehn, B.; Skaberna, S.; Kunze, U.

    1999-01-01

    Sub-100 nm V-grooves in GaAs(001) surfaces have been fabricated by patterning a thin photoresist layer with an atomic force microscope (AFM) and subsequent wet-chemical etching. The nanolithography is based on the dynamic ploughing technique. Anisotropic etchants under investigation are bromine-methanol-isopropanol, sulfuric acid-hydrogen peroxide-water, citric acid-hydrogen peroxide-water, and ammonium hydroxide-hydrogen peroxide-water. Along the [11¯0] direction the etched grooves are V-shaped, along [11¯0] the profile is U-shaped. Best results of 50-60-nm wide V-grooves with straight edges and smooth sidewalls are obtained from bromine-methanol-isopropanol, the other etchants form rough grooves. Concerning the reproducibility of the patterning process, the aqueous etch solutions exceed the bromine etchant.

  3. Effect of laser-etched indium tin oxide on optoelectrical properties of organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Li Jianfeng [Department of Electrical Engineering, National Chung-Cheng University, Ming-Hsiung, Chia-Yi 621, Taiwan (China)]. E-mail: jianfeng@ms18.hinet.net; Su, S.-H. [Department of Electronic Engineering, I-Shou University, Ta-Hsu Hsiang, Kaohsiung County 840, Taiwan (China); Hwang, K.-S. [Department of Electrical Engineering, National Chung-Cheng University, Ming-Hsiung, Chia-Yi 621, Taiwan (China); Yokoyama, Meiso [Department of Electronic Engineering, I-Shou University, Ta-Hsu Hsiang, Kaohsiung County 840, Taiwan (China)

    2007-04-15

    This study investigated how laser and wet etching methods of ITO substrates affect the optoelectrical properties of OLEDs. Experimental results indicated that the OLED with a laser-etched ITO substrate has a lower driving voltage than that with a wet-etched ITO substrate. According to scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurements, the ITO etching methods yielded different surface morphologies of ITO pattern edges. The lower luminance of the OLED with a laser-etched ITO substrate is attributable to the fringe at the edge of ITO pattern, which causes a high local electric field resulting in the recrystallization of organic materials.

  4. Assessment of spatial heterogeneity in continuous twin screw wet granulation process using three-compartmental population balance model.

    Science.gov (United States)

    Liu, Huolong; Galbraith, Shaun C; Park, Seo-Young; Cha, Bumjoon; Huang, Zhuangrong; Meyer, Robert Frederick; Flamm, Matthew H; O'Connor, Thomas; Lee, Sau; Yoon, Seongkyu

    2018-01-25

    In this study, a novel three-compartmental population balance model (PBM) for a continuous twin screw wet granulation process is developed, combining the techniques of PBM and regression process modeling. The developed model links screw configuration, screw speed, and blend throughput with granule properties to predict the granule size distribution (GSD) and volume-average granule diameter. The granulator screw barrel was divided into three compartments along barrel length: wetting compartment, mixing compartment, and steady growth compartment. Different granulation mechanisms are assumed in each compartment. The proposed model therefore considers spatial heterogeneity, improving model prediction accuracy. An industrial data set containing 14 experiments is applied for model development. Three validation experiments show that the three-compartmental PBM can accurately predict granule diameter and size distribution at randomly selected operating conditions. Sixteen combinations of aggregation and breakage kernels are investigated in predicting the experimental GSD to best judge the granulation mechanism. The three-compartmental model is compared with a one-compartmental model in predicting granule diameter at different experimental conditions to demonstrate its advantage. The influence of the screw configuration, screw speed and blend throughput on the volume-average granule diameter is analyzed based on the developed model.

  5. Twin screw wet granulation: Effect of process and formulation variables on powder caking during production.

    Science.gov (United States)

    Saleh, Mohammed F; Dhenge, Ranjit M; Cartwright, James J; Hounslow, Michael J; Salman, Agba D

    2015-12-30

    This work focuses on monitoring the behaviour and the mass of the built up/caking of powder during wet granulation using Twin Screw Granulator (TSG). The variables changed during this work are; powder (α-lactose monohydrate and microcrystalline cellulose (MCC)), the screw configuration (conveying and kneading elements) and the weight percentage of hydroxypropyl-methyl cellulose (HPMC) dissolved in the granulation liquid (i.e. changing liquid viscosity). Additionally, the effect of these variables on the size distribution, of the granules produced, was determined. The experiments were conducted using an acrylic transparent barrel. A stainless steel barrel was then used to conduct the two extreme granulation liquid viscosities with two different screw configurations, using lactose only. This was done to compare the findings to those obtained from the transparent barrel for validation purpose. These variables showed to affect the behaviour and the mass of the powder caking as well as the size distribution of granules. Overall, the use of kneading element resulted in uniform behaviour in caking with higher mass. Furthermore, increasing the amount of HPMC resulted in a reduction of the mass of powder caking for lactose, while showing inconsistent trend for MCC. Furthermore, lactose showed to have a greater tendency to cake in comparison to MCC. The results, for lactose, obtained from the stainless steel barrel compared well with their corresponding conditions from the transparent barrel, as the screw configuration and HPMC mass varied. Copyright © 2015 Elsevier B.V. All rights reserved.

  6. Optimization of a high shear wet granulation process using focused beam reflectance measurement and particle vision microscope technologies.

    Science.gov (United States)

    Arp, Zane; Smith, Ben; Dycus, Eric; O'grady, Des

    2011-08-01

    Application of process analytical technology in the pharmaceutical industry has led to a great number of studies into inline instrumentation. Near-infrared moisture monitoring in fluid bed drying and content uniformity assurance in blending are gaining acceptance for monitoring and quality control of these processes. Although these techniques are a great improvement over traditional methods, each is performed at points in processing wherein processing is well understood and interfacing equipment is relatively easy. More complex unit operations have largely been unexplored due to complexities interfacing inline analytical equipment to unit operations or a lack of methodologies that can be applied to measure attributes of interest. This paper reports results from a study utilizing a focused beam reflectance measurement system equipped with window scraper technology for the inline measurement and control of a high shear wet granulation (HSWG) process. In addition to this, offline results obtained with a particle vision microscope system are compared to verify the results obtained inline. It is shown that using these technologies in monitoring the HSWG process greatly increases process understanding of physical changes occurring during processing through real-time observation of particle size, leading to real-time control of the process. Copyright © 2011 Wiley-Liss, Inc., A Wiley Company.

  7. Etching Processes of Polytetrafluoroethylene Surfaces Exposed to He and He-O2 Atmospheric Post-discharges

    CERN Document Server

    Hubert, J; Vandencasteele, Nicolas; Desbief, Simon; Lazzaroni, Roberto; Reniers, F

    2016-01-01

    A comparative study of polytetrafluoroethylene (PTFE) surfaces treated by the post-discharge of He and He-O2 plasmas at atmospheric pressure is presented. The characterization of treated PTFE surfaces and the species involved in the surface modification are related. In pure He plasmas, no significant change of the surface has been observed by X-ray photoelectron spectroscopy (XPS), dynamic water contact angles (dWCA) and atomic force microscopy (AFM), in spite of important mass losses recorded. According to these observations, a layer-by-layer physical etching without any preferential orientation is proposed, where the highly energetic helium metastables are the main species responsible for the scission of --(CF2)n-- chains. In He--O 2 plasmas, as the density of helium metastables decreases as a function of the oxygen flow rate, the treatment leads to fewer species ejected from the PTFE surfaces (in agreement with mass loss measurements and the detection of fluorinated species onto aluminum foil). However, th...

  8. Catalyst-referred etching of silicon

    Directory of Open Access Journals (Sweden)

    Hideyuki Hara et al

    2007-01-01

    Full Text Available A Si wafer and polysilicon deposited on a Si wafer were planarized using catalyst-referred etching (CARE. Two apparatuses were produced for local etching and for planarization. The local etching apparatus was used to planarize polysilicon and the planarization apparatus was used to planarize Si wafers. Platinum and hydrofluoric acid were used as the catalytic plate and the source of reactive species, respectively. The processed surfaces were observed by optical interferometry, atomic force microscopy (AFM and scanning electron microscopy (SEM. The results indicate that the CARE-processed surface is flat and undamaged.

  9. Intensification of mass transfer in wet textile processes by power ultrasound

    NARCIS (Netherlands)

    Moholkar, V.S.; Nierstrasz, Vincent; Warmoeskerken, Marinus

    2003-01-01

    In industrial textile pre-treatment and finishing processes, mass transfer and mass transport are often rate-limiting. As a result, these processes require a relatively long residence time, large amounts of water and chemicals, and are also energy-consuming. In most of these processes, diffusion and

  10. Effect of Hydrofluoric Acid Etching Time on Titanium Topography, Chemistry, Wettability, and Cell Adhesion.

    Directory of Open Access Journals (Sweden)

    R Zahran

    Full Text Available Titanium implant surface etching has proven an effective method to enhance cell attachment. Despite the frequent use of hydrofluoric (HF acid, many questions remain unresolved, including the optimal etching time and its effect on surface and biological properties. The objective of this study was to investigate the effect of HF acid etching time on Ti topography, surface chemistry, wettability, and cell adhesion. These data are useful to design improved acid treatment and obtain an improved cell response. The surface topography, chemistry, dynamic wetting, and cell adhesiveness of polished Ti surfaces were evaluated after treatment with HF acid solution for 0, 2; 3, 5, 7, or 10 min, revealing a time-dependent effect of HF acid on their topography, chemistry, and wetting. Roughness and wetting increased with longer etching time except at 10 min, when roughness increased but wetness decreased. Skewness became negative after etching and kurtosis tended to 3 with longer etching time. Highest cell adhesion was achieved after 5-7 min of etching time. Wetting and cell adhesion were reduced on the highly rough surfaces obtained after 10-min etching time.

  11. Initial evaluation of dry storage issues for spent nuclear fuels in wet storage at the Idaho Chemical Processing Plant

    Energy Technology Data Exchange (ETDEWEB)

    Guenther, R J; Johnson, Jr, A B; Lund, A L; Gilbert, E R [and others

    1996-07-01

    The Pacific Northwest Laboratory has evaluated the basis for moving selected spent nuclear fuels in the CPP-603 and CPP-666 storage pools at the Idaho Chemical Processing Plant from wet to dry interim storage. This work is being conducted for the Lockheed Idaho Technologies Company as part of the effort to determine appropriate conditioning and dry storage requirements for these fuels. These spent fuels are from 22 test reactors and include elements clad with aluminum or stainless steel and a wide variety of fuel materials: UAl{sub x}, UAl{sub x}-Al and U{sub 3}O{sub 8}-Al cermets, U-5% fissium, UMo, UZrH{sub x}, UErZrH, UO{sub 2}-stainless steel cermet, and U{sub 3}O{sub 8}-stainless steel cermet. The study also included declad uranium-zirconium hydride spent fuel stored in the CPP-603 storage pools. The current condition and potential failure mechanisms for these spent fuels were evaluated to determine the impact on conditioning and dry storage requirements. Initial recommendations for conditioning and dry storage requirements are made based on the potential degradation mechanisms and their impacts on moving the spent fuel from wet to dry storage. Areas needing further evaluation are identified.

  12. Precise Point Positioning (PPP) - an alternative processing technique to estimate the tropospheric wet delay of GNSS signals

    Science.gov (United States)

    Karabatic, A.; Weber, R.

    2009-04-01

    Microwave signals of the GNSS satellites (GPS, GLONASS and in future GALILEO) are time delayed when passing the atmosphere. Based on this signal delay, e.g. the humidity distribution within the troposphere can be determined. It has already been shown that delivery of the Zenith Wet Delays derived from a network solution with hourly resolution and accuracy of 1mm PW is achievable. In the case of very large networks along with an increased number of observation and computational demands, an alternative processing technique has to be applied - Precise Point Positioning (PPP). In this presentation we investigate how the atmospheric precipitable water content derived from GNSS data can be assimilated within an operational Nowcasting system (INCA) and how PPP results compare to the network solution. It is to be expected that the accuracy of the PPP estimates decreases due to several effects (satellite clocks, biases, no ambiguity resolution), but independency from the reference station data will significantly shorten the latency of the results (few min), and provide the regional/national service to enhance the prognosis in the numerical forecast model. It has been proved that e.g. passing weather fronts can be analysed much better by introduced GNSS derived tropospheric wet delays because this data is influenced by changes in humidity in the free atmosphere, whereas the data at the meteorological ground stations reacts to these changes with a considerable time delay. This allows to forecast heavy rainfall causing potentially local floodings more reliable and to narrow down the affected region.

  13. An integrated study of uranyl mineral dissolution processes. Etch pit formation, effects of cations in solution, and secondary precipitation

    Energy Technology Data Exchange (ETDEWEB)

    Schindler, M. [Laurentian Univ., Sudbury, ON (Canada). Dept. of Earth Sciences; Hawthorne, F.C. [Manitoba Univ., Winnipeg, MB (Canada). Dept. of Geological Sciences; Mandaliev, P. [Eidgenoessische Technische Hochschule (ETH), Zurich (Switzerland). Dept. of Environmental Sciences; Burns, P.C.; Maurice, P.A. [Notre Dame Univ., IN (United States). Dept. of Civil Engineering and Geological Sciences

    2011-07-01

    Understanding the mechanism(s) of uranium-mineral dissolution is crucial for predictive modeling of U mobility in the subsurface. In order to understand how pH and type of cation in solution may affect dissolution, experiments were performed on mainly single crystals of curite, Pb{sup 2+}{sub 3}(H{sub 2}O){sub 2}[(UO{sub 2}){sub 4}O{sub 4}(OH){sub 3}]{sub 2}, becquerelite, Ca(H{sub 2}O){sub 8}[(UO{sub 2}){sub 6}O{sub 4}(OH){sub 6}], billietite, Ba(H{sub 2}O){sub 7}[(UO{sub 2}){sub 6}O{sub 4}(OH){sub 6}], fourmarierite Pb{sup 2+}{sub 1-x}(H{sub 2}O){sub 4}[(UO{sub 2}){sub 4}O{sub 3-2x}(OH){sub 4+2x}] (x= 0.00-0.50), uranophane, Ca(H{sub 2}O){sub 5}[(UO{sub 2})(SiO{sub 3}OH)]{sub 2}, zippeite, K{sub 3}(H{sub 2}O){sub 3}[(UO{sub 2}){sub 4}(SO{sub 4}){sub 2}O{sub 3}(OH)], and Na-substituted metaschoepite, Na{sub 1-x}[(UO{sub 2}){sub 4}O{sub 2-x}(OH){sub 5+x}] (H{sub 2}O){sub n}. Solutions included: deionized water; aqueous HCl solutions at pH 3.5 and 2; 0.5 mol L{sup -1} Pb(II)-, Ba-, Sr-, Ca-, Mg-, HCl solutions at pH 2; 1.0 mol L{sup -1} Na- and K-HCl solutions at pH 2; and a 0.1 mol L{sup -1} Na{sub 2}CO{sub 3} solution at pH 10.5. Uranyl mineral basal surface microtopography, micromorphology, and composition were examined prior to, and after dissolution experiments on micrometer scale specimens using atomic force microscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy. Evolution of etch pit depth at different pH values and experimental durations can be explained using a stepwave dissolution model. Effects of the cation in solution on etch pit symmetry and morphology can be explained using an adsorption model involving specific surface sites. Surface precipitation of the following phases was observed: (a) a highly-hydrated uranyl-hydroxy-hydrate in ultrapure water (on all minerals), (b) a Na-uranyl-hydroxy-hydrate in Na{sub 2}CO{sub 3} solution of pH 10.5 (on uranyl-hydroxy-hydrate minerals), (c) a Na-uranyl-carbonate on zippeite, (d) Ba- and

  14. Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays

    Science.gov (United States)

    Huang, E. K.; Nguyen, B.-M.; Hoffman, D.; Delaunay, P.-Y.; Razeghi, M.

    2009-01-01

    A challenge for type-II InAs/GaSb superlattice (T2SL) photodetectors is to achieve high fill factor, high aspect ratio etching for third generation focal plane arrays (FPAs). Initially, we compare the morphological and electrical results of single element T2SL photodiodes after BCl3/Ar inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) dry etching. Using a Si3N4 hard mask, ICP-etched structures exemplify greater sidewall verticality and smoothness, which are essential toward the realization of high fill factor FPAs. ICP-etched single element devices with SiO2 passivation that are 9.3μm in cutoff wavelength achieved vertical sidewalls of 7.7μm in depth with a resistance area product at zero bias of greater than 1,000 Ωcm2 and maximum differential resistance in excess of 10,000 Ωcm2 at 77K. By only modifying the etching technique in the fabrication steps, the ICP-etched photodiodes showed an order of magnitude decrease in their dark current densities in comparison to the ECR-etched devices. Finally, high aspect ratio etching is demonstrated on mutli-element arrays with 3μm-wide trenches that are 11μm deep.

  15. Application of advanced oxidation processes for cleaning of industrial water generated in wet dedusting of shaft furnace gases.

    Science.gov (United States)

    Czaplicka, Marianna; Kurowski, Ryszard; Jaworek, Katarzyna; Bratek, Łukasz

    2013-01-01

    The paper presents results of studies into advanced oxidation processes in 03 and 03/UV systems. An advanced oxidation process (AOP) was conducted to reduce the load of impurities in circulating waters from wet de-dusting of shaft furnace gases. Besides inorganic impurities, i.e. mainly arsenic compounds (16 g As L(-1) on average), lead, zinc, chlorides and sulphates, the waters also contain some organic material. The organic material is composed of a complex mixture that contains, amongst others, aliphatic compounds, phenol and its derivatives, pyridine bases, including pyridine, and its derivatives. The test results show degradation of organic and inorganic compounds during ozonation and photo-oxidation processes. Analysis of the solutions from the processes demonstrated that the complex organic material in the industrial water was oxidized in ozonation and in photo-oxidation, which resulted in formation of aldehydes and carboxylic acids. Kinetic degradation of selected pollutants is presented. Obtained results indicated that the O3/UV process is more effective in degradation of organic matter than ozonation. Depending on the process type, precipitation of the solid phase was observed. The efficiency of solid-phase formation was higher in photo-oxidation with ozone. It was found that the precipitated solid phase is composed mainly of arsenic, iron and oxygen.

  16. Optical and Electrical Performance of ZnO Films Textured by Chemical Etching

    Directory of Open Access Journals (Sweden)

    Shiuh-Chuan HER

    2015-11-01

    Full Text Available Zinc oxide (ZnO films were prepared by radio frequency (RF magnetron sputtering on the glass substrate as transparent conductive oxide films. For silicon solar cells, a proper surface texture is essential to introduce light scattering and subsequent light trapping to enhance the current generation. In this study, the magnetron-sputtered ZnO films were textured by wet-chemical etching in diluted hydrochloric acid (HCl for better light scattering. The diffuse transmittance of the surface textured ZnO films was measured to evaluate the light scattering. The influence of hydrochloric acid concentration on the morphology, optical and electrical properties of the surface-textured ZnO film was investigated. The ZnO film etched in 0.05M HCl solution for 30 s exhibited average diffuse transmittance in the visible wavelength range of 9.52 % and good resistivity of 1.10 x 10-3 W×cm while the as-deposited ZnO film had average diffuse transmittance of 0.51 % and relatively high resistivity of 5.84 x 10-2 W×cm. Experimental results illustrated that the optical and electrical performance of ZnO films can be significantly improved by introducing the surface texture through the wet-chemical etching process.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9624

  17. Effect of nitrogen doping on wetting and photoactive properties of laser processed zinc oxide-graphene oxide nanocomposite layers

    Energy Technology Data Exchange (ETDEWEB)

    György, E., E-mail: egyorgy@icmab.es [Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Barcelona (CSIC-ICMAB), Campus UAB, 08193 Bellaterra (Spain); National Institute for Lasers, Plasma and Radiation Physics, P. O. Box MG 36, 76900 Bucharest V (Romania); Pérez del Pino, A. [Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Barcelona (CSIC-ICMAB), Campus UAB, 08193 Bellaterra (Spain); Logofatu, C. [National Institute for Materials Physics, P. O. Box MG. 7, 77125 Bucharest (Romania); Duta, A.; Isac, L. [Transilvania University of Brasov, Research Centre for Renewable Energy Systems and Recycling, Eroilor 29, 500036, Brasov (Romania)

    2014-07-14

    Zinc oxide-graphene oxide nanocomposite layers were submitted to laser irradiation in air or controlled nitrogen atmosphere using a frequency quadrupled Nd:YAG (λ = 266 nm, τ{sub FWHM} ≅ 3 ns, ν = 10 Hz) laser source. The experiments were performed in air at atmospheric pressure or in nitrogen at a pressure of 2 × 10{sup 4} Pa. The effect of the irradiation conditions, incident laser fluence value, and number of subsequent laser pulses on the surface morphology of the composite material was systematically investigated. The obtained results reveal that nitrogen incorporation improves significantly the wetting and photoactive properties of the laser processed layers. The kinetics of water contact angle variation when the samples are submitted to laser irradiation in nitrogen are faster than that of the samples irradiated in air, the surfaces becoming super-hydrophilic under UV light irradiation.

  18. Catalytic Hydrothermal Conversion of Wet Biomass Feedstocks and Upgrading – Process Design and Optimization

    DEFF Research Database (Denmark)

    Hoffmann, Jessica; Toor, Saqib; Rosendahl, Lasse

    Liquid biofuels will play a major role for a more sustainable energy system of the future. The CatLiq® process is a 2nd generation biomass conversion process that is based on hydrothermal liquefaction. Hydrothermal liquefaction offers a very efficient and feedstock flexible way of converting...... biomass to bio-oil. Bio-oils from hydrothermal liquefaction are characterised by their high feedstock flexibility. Upgrading of complete bio-oils derived from hydrothermal conversion has not yet been extensively studied. Purpose of this work is to reduce the oxygen content of the bio-oil to improve...

  19. Wetting by Liquid Metals—Application in Materials Processing: The Contribution of the Grenoble Group

    Directory of Open Access Journals (Sweden)

    Nicolas Eustathopoulos

    2015-03-01

    Full Text Available The wettability of ceramics by liquid metals is discussed from both the fundamental point of view and the point of view of applications. The role of interfacial reactions (simple dissolution of the solid in the liquid or formation of a layer of a new compound is illustrated and analysed. Several results are presented in order to illustrate the role of wettability in materials processing, namely infiltration processing, joining dissimilar materials by brazing and selecting crucibles for crystallising liquid metals and semiconductors. The review includes results obtained during the last 15 years mainly, but not only, by the Grenoble group.

  20. Metal-assisted chemical etching of CIGS thin films for grain size analysis

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Chaowei [Research and Development Centre, Hanergy Thin Film Power Group Limited, Chengdu (China); Loi, Huu-Ha; Duong, Anh; Parker, Magdalena [Failure Analysis Department, MiaSole Hi-Tech Corp., Santa Clara, CA (United States)

    2016-09-15

    Grain size of the CIGS absorber is an important monitoring factor in the CIGS solar cell manufacturing. Electron backscatter diffraction (EBSD) analysis is commonly used to perform CIGS grain size analysis in the scanning electron microscope (SEM). Although direct quantification on SEM image using the average grain intercept (AGI) method is faster and simpler than EBSD, it is hardly applicable on CIGS thin films. The challenge is that, not like polycrystalline silicon, to define grain boundaries by selective chemical etching is not easily realizable for the multi-component CIGS alloy. In this Letter, we present direct quantification of CIGS thin film grain size using the AGI method by developing metal-assisted wet chemical etching process to define CIGS grain boundaries. The calculated value is similar to EBSD result. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Conversion of a wet waste feedstock to biocrude by hydrothermal processing in a continuous-flow reactor: grape pomace

    Energy Technology Data Exchange (ETDEWEB)

    Elliott, Douglas C.; Schmidt, Andrew J.; Hart, Todd R.; Billing, Justin M.

    2017-05-13

    Wet waste feedstocks present an apt opportunity for biomass conversion to fuels by hydrothermal processing. In this study, grape pomace slurries from two varieties, Montepulciano and cabernet sauvignon, have been converted into a biocrude by hydrothermal liquefaction (HTL) in a bench-scale, continuous-flow reactor system. Carbon conversion to gravity-separable biocrude product up to 56 % was accomplished at relatively low temperature (350 C) in a pressurized (sub-critical liquid water) environment (20 MPa) when using grape pomace feedstock slurry with a 16.8 wt% concentration of dry solids processed at a liquid hourly space velocity of 2.1 h-1. Direct oil recovery was achieved without the use of a solvent and biomass trace mineral components were removed by processing steps so that they did not cause processing difficulties. In addition, catalytic hydrothermal gasification (CHG) was effectively applied for HTL byproduct water cleanup using a Ru on C catalyst in a fixed bed producing a gas composed of methane and carbon dioxide from water soluble organics. Conversion of 99.8% of the chemical oxygen demand (COD) left in the aqueous phase was demonstrated. As a result, high conversion of grape pomace to liquid and gas fuel products was found with residual organic contamination in byproduct water reduced to <150 mg/kg COD.

  2. On the Rust Products Formed on Weathering and Carbon Steels Exposed to Chloride in Dry-Wet Cyclical Processes

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, K. E.; Morales, A. L.; Barrero, C. A., E-mail: cbarrero@fisica.udea.edu.co [Universidad de Antioquia, Grupo de Corrosion y Proteccion, Facultad de Ingenierias (Colombia); Greneche, J. M. [Universite du Maine, Laboratoire de Physique de l' Etat Condense - UMR CNRS 6087 (France)

    2005-02-15

    The rust products formed on weathering and carbon steels exposed to dry-wet cyclical processes in different chloride-rich solutions are carefully examined by means of different techniques. Special emphasis is given to the methodology of analysis of the data using 300 K and 77 K Moessbauer spectrometry and X-ray diffraction. The rust that is loosely bound to the metal surface and that it is lost during the corrosion process, for both types of steel, was found to be composed of lepidocrocite, superparamagnetic goethite, hematite, and traces of akaganeite. On the other hand, the adherent rust, which is differentiated as scraped and hit according to the way it is obtained, from both steels was found to be composed of akaganeite, spinel phase, goethite exhibiting broad distribution of particle sizes and lepidocrocite. The relative abundances of rust components for both steels were very similar, suggesting similar corrosion processes. Mass loss measurements show that the corrosion rates increases with increasing the chloride concentration. The presence of large quantities of spinel phase and akaganeite are a consequence of a corrosion process under the influence of very high chloride concentrations. Our results are useful for assessing the behavior of weathering steels where the levels of chlorides are high or in contact with sea water.

  3. Evaluation of Friction Stir Processing of HY-80 Steel Under Wet and Dry Conditions

    Science.gov (United States)

    2012-03-01

    Titanium (Ti) --- 0.02 Vanadium (V) --- 0.03 * P + S = 0.045 MAX 10 3. Sectioning The large plate was sectioned into 3 smaller plates: A, B and...Chromium .83 ... ·- Motvbdenum .t 7 .•. ... Vanadium .008 ... ... Magnesium <.0005 ... ... Methods: Carbon & Sulfur - Combustion infrared...and its alloys.” Journal of Materials Processing Technology, vol. 127, pp. 174–177, 2002. [22] Marine structural steel data bank; Ship structure

  4. Velocity sources as an explanation for experimentally observed variations in Si{111} etch rates

    NARCIS (Netherlands)

    Nijdam, A.J.; Berenschot, Johan W.; van Suchtelen, J.; Gardeniers, Johannes G.E.; Elwenspoek, Michael Curt

    In anisotropic wet-chemical etching of silicon the etch rate ratio of [Left Angle Bracket] 100 [Right Angle Bracket] to [Left Angle Bracket] 111 [Right Angle Bracket] orientations is an important parameter that determines the reproducibility and accuracy of microstructures. Up to now, it is not

  5. Surface engineering of SiC via sublimation etching

    Energy Technology Data Exchange (ETDEWEB)

    Jokubavicius, Valdas, E-mail: valjo@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden); Yazdi, Gholam R.; Ivanov, Ivan G. [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden); Niu, Yuran; Zakharov, Alexei [Max Lab, Lund University, S-22100 Lund (Sweden); Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden)

    2016-12-30

    Highlights: • Comparison of 6H-, 4H- and 3C-SiC sublimation etching. • Effects of Si-C and Si-C-Ta chemical systems on etching mechanisms. • Effect of etching ambient on surface reconstruction. • Application of etched 4H-SiC surface for the growth of graphene nanoribbons is illustrated. - Abstract: We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10{sup −5} mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  6. Wetting behavior of Al-Si-Mg alloys on Si{sub 3}N{sub 4}/Si substrates: optimization of processing parameters

    Energy Technology Data Exchange (ETDEWEB)

    Pena, J.L. de la; Pech-Canul, M.I. [Centro de Investigacion y de Estudios Avanzados Unidad Saltillo, Saltillo, Coahuila (Mexico)

    2008-06-15

    The wetting behavior of Al-Si-Mg alloys on Si{sub 3}N{sub 4}/Si substrates has been investigated using the sessile drop technique. Based on a Taguchi experiment design, the effect of the following processing parameters on the contact angle ({theta}) and surface tension ({sigma}{sub LV}) was studied: processing time and temperature, atmosphere (Ar and N{sub 2}), substrate surface condition (with and without a silicon wafer), as well as the Mg and Si contents in the aluminium alloy. In nitrogen, non-wetting conditions prevail during the isothermal events while in argon a remarkable non-wetting to wetting transition leads to contact angles {theta} as low as 11{+-}3 and a liquid surface tension {sigma}{sub LV} of 33{+-}10 x 10{sup -5} kJ/m{sup 2}. According to the multiple analysis of variance (Manova), the optimum conditions for minimizing the values of {theta} and {sigma}{sub LV} are as follows: temperature of 1100 C, processing time of 90 min, argon atmosphere, no use of a silicon wafer, and the use of the Al-18% Mg-1% Si alloy. A verification test conducted under the optimized conditions resulted in a contact angle of {theta}=9{+-}3 and a surface tension of {sigma}{sub LV}=29{+-} 9 x 10{sup -5} kJ/m{sup 2}, both indicative of excellent wetting. (orig.)

  7. Polymer-based doping control for performance enhancement of wet-processed short-channel CNTFETs

    Science.gov (United States)

    Hartmann, Martin; Schubel, René; Claus, Martin; Jordan, Rainer; Schulz, Stefan E.; Hermann, Sascha

    2018-01-01

    The electrical transport properties of short-channel transistors based on single-walled carbon nanotubes (CNT) are significantly affected by bundling along with solution processing. We report that especially high off currents of CNT transistors are not only related to the incorporation of metallic CNTs but also to the incorporation of CNT bundles. By applying device passivation with poly(4-vinylpyridine), the impact of CNT bundling on the device performance can be strongly reduced due to increased gate efficiency as well as reduced oxygen and water-induced p-type doping, boosting essential field-effect transistor performance parameters by several orders of magnitude. Moreover, this passivation approach allows the hysteresis and threshold voltage of CNT transistors to be tuned.

  8. Excimer Laser Etching

    Energy Technology Data Exchange (ETDEWEB)

    Boatner, Lynn A [ORNL; Longmire, Hu Foster [ORNL; Rouleau, Christopher M [ORNL; Gray, Allison S [ORNL

    2008-04-01

    Excimer laser radiation at a wavelength of = 248 nm represents a new etching method for the preparation of metallographic specimens. The method is shown to be particularly effective for enhancing the contrast between different phases in a multiphase metallographic specimen.

  9. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-08-10

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.

  10. Etching of germanium-tin using ammonia peroxide mixture

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  11. Campylobacter in Broiler Chicken and Broiler Meat in Sri Lanka: Influence of Semi-Automated vs. Wet Market Processing on Campylobacter Contamination of Broiler Neck Skin Samples

    Science.gov (United States)

    Kottawatta, Kottawattage S. A.; Van Bergen, Marcel A. P.; Abeynayake, Preeni; Wagenaar, Jaap A.; Veldman, Kees T.; Kalupahana, Ruwani S.

    2017-01-01

    Broiler meat can become contaminated with Campylobacter of intestinal origin during processing. The present study aimed to identify the prevalence of Campylobacter in broiler flocks and meat contamination at retail shops, and determine the influence of semi-automated and wet market processing on Campylobacter contamination of neck skin samples. Samples were collected from semi-automated plants (n = 102) and wet markets (n = 25). From each batch of broilers, pooled caecal samples and neck skin samples were tested for Campylobacter. Broiler meat purchased from retail outlets (n = 37) was also tested. The prevalence of Campylobacter colonized broiler flocks was 67%. The contamination of meat at retail was 59%. Both semi-automated and wet market processing resulted to contaminate the broiler neck skins to the levels of 27.4% and 48%, respectively. When Campylobacter-free broiler flocks were processed in semi-automated facilities 15% (5/33) of neck skin samples became contaminated by the end of processing whereas 25% (2/8) became contaminated after wet market processing. Characterization of isolates revealed a higher proportion of C. coli compared to C. jejuni. Higher proportions of isolates were resistant to important antimicrobials. This study shows the importance of Campylobacter in poultry industry in Sri Lanka and the need for controlling antimicrobial resistance. PMID:29186018

  12. Campylobacter in Broiler Chicken and Broiler Meat in Sri Lanka: Influence of Semi-Automated vs. Wet Market Processing on Campylobacter Contamination of Broiler Neck Skin Samples

    Directory of Open Access Journals (Sweden)

    Kottawattage S. A. Kottawatta

    2017-11-01

    Full Text Available Broiler meat can become contaminated with Campylobacter of intestinal origin during processing. The present study aimed to identify the prevalence of Campylobacter in broiler flocks and meat contamination at retail shops, and determine the influence of semi-automated and wet market processing on Campylobacter contamination of neck skin samples. Samples were collected from semi-automated plants (n = 102 and wet markets (n = 25. From each batch of broilers, pooled caecal samples and neck skin samples were tested for Campylobacter. Broiler meat purchased from retail outlets (n = 37 was also tested. The prevalence of Campylobacter colonized broiler flocks was 67%. The contamination of meat at retail was 59%. Both semi-automated and wet market processing resulted to contaminate the broiler neck skins to the levels of 27.4% and 48%, respectively. When Campylobacter-free broiler flocks were processed in semi-automated facilities 15% (5/33 of neck skin samples became contaminated by the end of processing whereas 25% (2/8 became contaminated after wet market processing. Characterization of isolates revealed a higher proportion of C. coli compared to C. jejuni. Higher proportions of isolates were resistant to important antimicrobials. This study shows the importance of Campylobacter in poultry industry in Sri Lanka and the need for controlling antimicrobial resistance.

  13. Campylobacter in Broiler Chicken and Broiler Meat in Sri Lanka: Influence of Semi-Automated vs. Wet Market Processing on Campylobacter Contamination of Broiler Neck Skin Samples.

    Science.gov (United States)

    Kottawatta, Kottawattage S A; Van Bergen, Marcel A P; Abeynayake, Preeni; Wagenaar, Jaap A; Veldman, Kees T; Kalupahana, Ruwani S

    2017-11-29

    Broiler meat can become contaminated with Campylobacter of intestinal origin during processing. The present study aimed to identify the prevalence of Campylobacter in broiler flocks and meat contamination at retail shops, and determine the influence of semi-automated and wet market processing on Campylobacter contamination of neck skin samples. Samples were collected from semi-automated plants ( n = 102) and wet markets ( n = 25). From each batch of broilers, pooled caecal samples and neck skin samples were tested for Campylobacter . Broiler meat purchased from retail outlets ( n = 37) was also tested. The prevalence of Campylobacter colonized broiler flocks was 67%. The contamination of meat at retail was 59%. Both semi-automated and wet market processing resulted to contaminate the broiler neck skins to the levels of 27.4% and 48%, respectively. When Campylobacter -free broiler flocks were processed in semi-automated facilities 15% (5/33) of neck skin samples became contaminated by the end of processing whereas 25% (2/8) became contaminated after wet market processing. Characterization of isolates revealed a higher proportion of C. coli compared to C. jejuni . Higher proportions of isolates were resistant to important antimicrobials. This study shows the importance of Campylobacter in poultry industry in Sri Lanka and the need for controlling antimicrobial resistance.

  14. Wet air oxidation of resorcinol as a model treatment for refractory organics in wastewaters from the wood processing industry.

    Science.gov (United States)

    Weber, Bernd; Chavez, Alma; Morales-Mejia, Julio; Eichenauer, Sabrina; Stadlbauer, Ernst A; Almanza, Rafael

    2015-09-15

    Wastewater treatment systems are important tools to enhance sustainability in terms of reducing environmental impact and complying with sanitary requirements. This work addresses the wet air oxidation (WAO) process for pre-treatment of phenolic wastewater effluents. The aim was to increase biodegradability prior to a subsequent anaerobic stage. In WAO laboratory experiments using a micro-autoclave, the model compound resorcinol was degraded under different oxygen availability regims within the temperature range 150 °C-270 °C. The activation energy was determined to be 51.5 kJ/mol. Analysis of the products revealed that after 3 h of reaction at 230 °C, 97.5% degradation of resorcinol was achieved. At 250 °C and the same reaction time complete removal of resorcinol was observed. In this case the total organic carbon content was reduced down to 29%, from 118.0 mg/L down to 34.4 mg/L. Under these process conditions, the pollutant was only partially mineralized and the ratio of the biological oxygen demand relative to the chemical oxygen demand, which is 0.07 for resorcinol, was increased to a value exceeding 0.5. The main by-product acetic acid, which is a preferred compound for methanogenic bacteria, was found to account for 33% of the total organic carbon. Copyright © 2015 Elsevier Ltd. All rights reserved.

  15. The influence of Chromium supplied by tanning and wet finishing processes on the formation of cr(vi in leather

    Directory of Open Access Journals (Sweden)

    W. F. Fuck

    2011-06-01

    Full Text Available Chromium used in leather manufacturing can be oxidized from the trivalent to the hexavalent state, causing environmental concerns. In this study, the influence of Cr(III from tanning, deacidification pH, fatliquors, chrome retanning and vegetable retanning on the formation of Cr(VI in leather was analyzed by comparing natural and aged samples. In wet-blue leather, even after aging and in fatliquored leathers that did not suffer the aging process, the presence of Cr(VI was always below the detection limit of 3 mg/kg. Considering the presence of Cr(VI, the supply of chromium during the retanning step had a more significant effect than during the tanning. In the fatliquoring process with sulfites, fish and synthetic fatliquor leather samples contained Cr(VI when aged, and the highest concentration detected was 26.7 mg/kg. The evaluation of Cr(VI formation led to recommendations for regulation in the leather industry.

  16. Evaluation of wet air oxidation as a pretreatment strategy for bioethanol production from rice husk and process optimization

    Energy Technology Data Exchange (ETDEWEB)

    Banerjee, Saumita [Environmental Biotechnology Division, National Environmental Engineering Research Institute, Nehru Marg, Nagpur 440 020 Maharashtra (India); Department of Biotechnology, Indian Institute of Technology Kharagpur, Kharagpur 721 302 West Bengal (India); Sen, Ramkrishna [Department of Biotechnology, Indian Institute of Technology Kharagpur, Kharagpur 721 302 West Bengal (India); Pandey, R.A.; Chakrabarti, Tapan; Satpute, Dewanand; Giri, Balendu Shekher; Mudliar, Sandeep [Environmental Biotechnology Division, National Environmental Engineering Research Institute, Nehru Marg, Nagpur 440 020 Maharashtra (India)

    2009-12-15

    The pretreatment of rice husk by the wet air oxidation (WAO) technique was investigated by means of a statistically designed set of experiments. Reaction temperature, air pressure, and reaction time were the process parameters considered. WAO pretreatment of rice husk increased the cellulose content of the solid fraction by virtue of lignin removal and hemicellulose solubilization. The cellulose recovery was around 92%, while lignin recovery was in the tune of 8-20%, indicating oxidation of a bulk quantity of lignin. The liquid fraction was found to be rich in hexose and pentose sugars, which could be directly utilized as substrate for ethanol fermentation. The WAO process was optimized by multi-objective numerical optimization with the help of MINITAB 14 suite of statistical software, and an optimum WAO condition of 185 C, 0.5 MPa, and 15 min was predicted and experimentally validated to give 67% (w/w) cellulose content in the solid fraction, along with 89% lignin removal, and 70% hemicellulose solubilization; 13.1 gl{sup -1} glucose and 3.4 gl{sup -1} xylose were detected in the liquid fraction. The high cellulose content and negligible residual lignin in the solid fraction would greatly facilitate subsequent enzymatic hydrolysis, and result in improved ethanol yields from rice husk. (author)

  17. Fabrication Process Changes for Performance Improvement of a RF MEMS Resonator: Conformable Contact Lithography, Moire Alignment, and Chlorine Dry Etching

    National Research Council Canada - National Science Library

    Sakai, Mark

    2005-01-01

    .... A CCL process utilizing moire alignment marks is described. An automated moire-based alignment system using Labview software is presented which demonstrates sub-100 nm alignment accuracy for a single alignment mark...

  18. The effect of dynamic etching on surface quality and laser damage resistance for fused silica optics

    Science.gov (United States)

    Wang, Zhiqiang; Yan, Hongwei; Yuan, Xiaodong; Li, Yuan; Yang, Ke; Yan, Lianghong; Zhang, Lijuan; Liu, Taixiang; Li, Heyang

    2017-05-01

    Fused silica optics were treated by dynamic etching using buffered hydrofluoric acid (BHF) with different etching depths. The transmissivity of fused silica slightly increases in deep UV (DUV) range after dynamic etching. Surface qualities of fused silica were characterized in terms of surface roughness, surface profile and photoluminescence (PL) spectra. The results show that dynamic etching has a slight impact on surface RMS roughness.PL defects gradually reduces by dynamic etching, and laser damage resistance of fused silica continuously increases with etching depth extending. When removal depth increases to 12μm, the damage threshold is the double that of the unetched surface. However, surface profile continuously deteriorates with etching depth increasing. Appropriate etching amount is very important for improving damage resistance and mitigating surface profile deteriorating of fused silica during etching process simultaneously. The study is expected to contribute to the practical application of dynamic etching for mitigating laser induced degradation of fused silica optics under UV laser irradiation.

  19. Removal of organic pollutants in tannery wastewater from wet-blue fur processing by integrated Anoxic/Oxic (A/O) and Fenton: Process optimization

    DEFF Research Database (Denmark)

    Wang, Yong; Li, Weiguang; Angelidaki, Irini

    2014-01-01

    the highest COD removal of 55.87%. GC-MS analysis was carried out to observe the change of organic composition during Fenton oxidation, and most of the residual organic pollutants resistant to Fenton treatment belonged to organosilanes and saturated alkanes. This study will provide useful information......Treatment of tannery wastewater has been a challenge in remediation of aquatic environment in developing countries. Removal of organic pollutants in tannery wastewater from wet-blue fur processing was studied using integrated processes of Anoxic/Oxic and Fenton. Analysis of COD composition based...... performance than anaerobic degradation. Effect of hydraulic retention time on A/O performance in terms of COD removal efficiency was evaluated, excess HRT like 60h would reduce the effluent quality, and the appropriate organic load rate was at least up to 0.8kgCODm-3d-1 with corresponding COD removal of about...

  20. Wetting and surface energy of vertically aligned silicon nanowires.

    Science.gov (United States)

    Jana, S; Mondal, S; Bhattacharyya, S R

    2013-06-01

    The vertically aligned silicon nanowires (SiNWs) have been synthesized by metal assisted chemical etching process on commercially available p type silicon wafer. The aspect ratios of the SiNWs have been modified by simply varying the etching time. The microstructures of the as prepared samples have been investigated with the field emission scanning electron microscope as well as with a high resolution transmission electron microscope. The bonding information has been obtained by Fourier transformed infrared spectroscopy and X-ray photoelectron spectroscopy. The contact angles for water with the as-prepared SiNWs films were measured and found to be highly dependent upon the aspect ratio of the as synthesized wires. For obtaining a deep insight regarding the reasons behind this dependence the surface energies of the as prepared SiNWs films have been calculated by Owens method using two liquids, water and glycerol. The porosity of the films has been calculated indirectly from the equilibrium equations. It has been found that the etching time has a profound effect on the aspect ratio and thus on the surface energy of SiNWs that governs the wetting behaviour of the as prepared samples.

  1. Improvement of luster consistency between the p-Pad and the n-Pad of GaN-based light-emitting diodes via the under-etching process

    Science.gov (United States)

    Zheng, Chenju; Lv, Jiajiang; Zhou, Shengjun; Liu, Sheng

    2017-04-01

    For improvement of the light extraction efficiency of GaN-based lateral light-emitting diodes (LEDs), a p-GaN surface was textured through a low-temperature (850 °C) p-GaN growth process. However, the p-GaN texturing process caused luster inconsistency between the n-pad and the p-pad due to the roughness difference between the indium-tin oxide (ITO) and the n-GaN beneath the pads, which decreased the image recognition rate and accuracy during the wire bonding process for LED packaging. Therefore, an under-etching process was proposed to improve the luster consistency between the p-pad and the n-pad of GaN-based LEDs with a naturally textured p-GaN surface. The under-etching process decreased the roughness of the exposed n-GaN surface from 109 nm to 73.1 nm, which was similar to the roughness (74.8 nm) of the ITO surface. Optical microscopy showed that LEDs with a naturally textured p-GaN surface exhibited excellent luster consistency between the n-pad and the p-pad after the proposed under-etching process had been applied. Further analysis indicated that the LEDs with a naturally textured p-GaN surface showed no degradation of optical or the electrical performance after the proposed under-etching process had been applied. At a 20-mA injection current, the light output power of a LED with naturally a textured p-GaN surface was 8.7% higher than that of a LED with a smooth p-GaN surface.

  2. Different etching evolution from initial to etched ZnO nanorods on substrates of dissimilar geometries

    Science.gov (United States)

    Jing, Weixuan; Shi, Jiafan; Xu, Zhipeng; Jiang, Zhuangde; Wei, Zhengying; Zhou, Fan; Gao, Weizhuo

    2017-08-01

    In this paper the influencing factors and their effects on the etching evolution from initial to etched ZnO nanorods (ZnONRs) were identified and investigated. Batches of ZnO nanorods were hydrothermally synthesized on planar, convex, and concave substrates, and then were etched in NaOH solution. It was found that not only the synthesizing and etching parameters but also the geometries of the substrates influence significantly the diameters, density, and orientation of both initial and etched ZnONRs. The larger the diameters of ZnONRs are, the more the oxygen vacancies on (001) crystal planes. It is at these oxygen vacancies that the etching process starts. Due to larger average diameters, initial ZnONRs on convex substrates are more readily etched than that on planar and concave ones. Thus uniform ZnO nanotubes (ZnONTs) appear quickest and most easily on convex substrates. The results can benefit the batch preparation, the performance improvement, and the process standardization of related ZnONR- and ZnONT-based devices and sensors.

  3. Highly efficient ultraviolet photodetectors based on TiO(2) nanocrystal-polymer composites via wet processing.

    Science.gov (United States)

    Han, Yangang; Wu, Gang; Li, Haiguo; Wang, Mang; Chen, Hongzheng

    2010-05-07

    Solution-processed inorganic/organic hybrid films based on anatase TiO(2) nanocrystals and poly (9,9-dihexylfluorene) (PFH) are fabricated via a simple spin-coating method and characterized by atomic force microscopy, UV-vis absorption and photoluminescence spectra. The photodetector devices are made from hybrid TiO(2)/PFH bulk heterojunction films sandwiched between poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) pre-coated ITO and Al electrodes. The device characteristics, including current-voltage (I-V) curves under UV illumination, spectral response, response time and bias dependence, are studied. The photovoltaic effect is observed and the photocurrent shows an increase with increasing TiO(2) content from 2.5 to 11 wt%. The high UV photo-to-dark current ratio of 10(3), fast response time less than 200 ms and a responsivity of 54.6 mA W( - 1) are obtained for the hybrid photodetector. The fast photoresponse is attributed to the enhanced interfacial dissociation of excitons. The overlap of the spectral response with the UV-A range (320-400 nm) and the low-cost wet fabrication method show their potential for environmental and biological uses.

  4. New dry etch for Al and Al-Cu-Si alloy: Reactively masked sputter etching with SiF4

    Science.gov (United States)

    Horwitz, Chris M.

    1983-05-01

    A new technique, ``reactively masked sputter etching'' of Al, is described here. This process can pattern fine lines in Al or in Al-Cu-Si alloy but does not have many of the problems associated with presently available reactive sputter etching methods. The technique combines deposition and etching in the one process; Al2O3, Al, and Al-Cu-Si alloy are etched, while all other materials are coated with a layer of SiOx. This results in essentially infinite (Al/mask) and (Al/substrate) etch rate ratios. In addition, the etch gas contains no Cl, which is a common cause of corrosion and undercut. In effect, the etch combines the advantages of both reactive and nonreactive sputter etching. The gas described here is a SiF4/O2 mixture, and it is shown that additions of most impurity gases have very little effect on the etch. However, water or H2 addition significantly improves the performance of the etch, and typical profiles are shown for a SiF4/O2/H2 mixture with a photoresist masking layer.

  5. Wet processing of palladium for use in the tritium facility at Westinghouse, Savannah River, SC. Preparation of palladium using the Mound Muddy Water process

    Energy Technology Data Exchange (ETDEWEB)

    Baldwin, D.P.; Zamzow, D.S.

    1998-11-10

    Palladium used at Savannah River for tritium storage is currently obtained from a commercial source. In order to better understand the processes involved in preparing this material, Savannah River is supporting investigations into the chemical reactions used to synthesize this material and into the conditions necessary to produce palladium powder that meets their specifications. This better understanding may help to guarantee a continued reliable source for this material in the future. As part of this evaluation, a work-for-others contract between Westinghouse Savannah River Company and the Ames Laboratory Metallurgy and Ceramics Program was initiated. During FY98, the process for producing palladium powder developed in 1986 by Dan Grove of Mound Applied Technologies (USDOE) was studied to understand the processing conditions that lead to changes in morphology in the final product. This report details the results of this study of the Mound Muddy Water process, along with the results of a round-robin analysis of well-characterized palladium samples that was performed by Savannah River and Ames Laboratory. The Mound Muddy Water process is comprised of three basic wet chemical processes, palladium dissolution, neutralization, and precipitation, with a number of filtration steps to remove unwanted impurity precipitates.

  6. Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

    Energy Technology Data Exchange (ETDEWEB)

    Cybart, Shane; Roediger, Peter; Ulin-Avila, Erick; Wu, Stephen; Wong, Travis; Dynes, Robert

    2012-11-30

    We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.

  7. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Kamal P. [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Mahyavanshi, Rakesh D. [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

    2017-01-30

    Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

  8. Electrical field-induced faceting of etched features using plasma etching of fused silica

    Science.gov (United States)

    Huff, M.; Pedersen, M.

    2017-07-01

    This paper reports a previously unreported anomaly that occurs when attempting to perform deep, highly anisotropic etches into fused silica using an Inductively-Coupled Plasma (ICP) etch process. Specifically, it was observed that the top portion of the etched features exhibited a substantially different angle compared to the vertical sidewalls that would be expected in a typical highly anisotropic etch process. This anomaly has been termed as "faceting." A possible explanation of the mechanism that causes this effect and a method to eradicate it has been developed. Additionally, the method to eliminate the faceting is demonstrated. It is theorized that this faceting is a result of the interaction of the electro-potential electrical fields that surround the patterned nickel layers used as a hard mask and the electrical fields directing the high-energy ions from the plasma to the substrate surface. Based on this theory, an equation for calculating the minimum hard mask thickness required for a desired etch depth into fused silica to avoid faceting was derived. As validation, test samples were fabricated employing hard masks of thicknesses calculated based on the derived equation, and it was found that no faceting was observed on these samples, thereby demonstrating that the solution performed as predicted. Deep highly anisotropic etching of fused silica, as well as other forms of silicon dioxide, including crystalline quartz, using plasma etching, has an important application in the fabrication of several MEMS, NEMS, microelectronic, and photonic devices. Therefore, a method to eliminate faceting is an important development for the accurate control of the dimensions of deep and anisotropic etched features of these devices using ICP etch technology.

  9. Study of the roughness in a photoresist masked, isotropic, SF6-based ICP silicon etch

    DEFF Research Database (Denmark)

    Larsen, Kristian Pontoppidan; Petersen, Dirch Hjorth; Hansen, Ole

    2006-01-01

    = 40 - 70 mTorr. Here the normalized roughness is the ratio of the roughness amplitude to the etch depth. The rough etching processes showed characteristic high-aspect-ratio and crystal-orientation-dependent surface morphology. The temporal evolution of this roughness was studied, and observations...... suggest a gradual buildup of surface contamination (redeposits) originating from the photoresist mask. A model was used to analyze the etched profiles with respect the internal etching conditions. The almost isotropic etching profiles, obtained in both rough and smooth etching processes, are generally...

  10. Particle precipitation in connection with KOH etching of silicon

    DEFF Research Database (Denmark)

    Nielsen, Christian Bergenstof; Christensen, Carsten; Pedersen, Casper

    2004-01-01

    not removed, the iron oxide particles cause etch pits on the Si surface when later processed and exposed to phosphoric acid. It has been found that the particles can be removed in an HCl solution, but not completely in an H2SO4- H2O2 solution. The paper discusses the involved precipitation mechanism in terms......This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show...... that the precipitation is independent of KOH etching time, but that the amount of deposited material varies with dopant type and dopant concentration. The experiments also suggest that the precipitation occurs when the silicon wafers are removed from the KOH etching solution and not during the etching procedure. When...

  11. Preparation and Photocatalytic Activity of Potassium- Incorporated Titanium Oxide Nanostructures Produced by the Wet Corrosion Process Using Various Titanium Alloys

    Directory of Open Access Journals (Sweden)

    So Yoon Lee

    2015-08-01

    Full Text Available Nanostructured potassium-incorporated Ti-based oxides have attracted much attention because the incorporated potassium can influence their structural and physico-chemical properties. With the aim of tuning the structural and physical properties, we have demonstrated the wet corrosion process (WCP as a simple method for nanostructure fabrication using various Ti-based materials, namely Ti–6Al–4V alloy (TAV, Ti–Ni (TN alloy and pure Ti, which have 90%, 50% and 100% initial Ti content, respectively. We have systematically investigated the relationship between the Ti content in the initial metal and the precise condition of WCP to control the structural and physical properties of the resulting nanostructures. The WCP treatment involved various concentrations of KOH solutions. The precise conditions for producing K-incorporated nanostructured titanium oxide films (nTOFs were strongly dependent on the Ti content of the initial metal. Ti and TAV yielded one-dimensional nanowires of K-incorporated nTOFs after treatment with 10 mol/L-KOH solution, whereas TN required a higher concentration (20 mol/L-KOH solution to produce comparable nanostructures. The obtained nanostructures revealed a blue-shift in UV absorption spectra due to the quantum confinement effects. A significant enhancement of the photocatalytic activity was observed via the chromomeric change and the intermediate formation of methylene blue molecules under UV irradiation. This study demonstrates the WCP as a simple, versatile and scalable method for the production of nanostructured K-incorporated nTOFs to be used as high-performance photocatalysts for environmental and energy applications.

  12. Fabrication of nanostructured silicon surface using selective chemical etching

    Science.gov (United States)

    Sagyndykov, A. B.; Kalkozova, Zh. K.; Yar-Mukhamedova, G. Sh.; Abdullin, Kh. A.

    2017-11-01

    A two-stage process based on selective chemical etching induced by metal nanoclusters is used to fabricate nanostructured surfaces of silicon plates with a relatively low reflectance. At silicon surfaces covered with silver nanoclusters, the SERS effect is observed for rhodamine concentrations of about 10-12 M. At certain technological parameters, the depth of the nanostructured layer weakly depends on the conditions for the two-stage etching, in particular, etching time. Under otherwise equal conditions for etching, the rate of the formation of textured layer in the p-type silicon is two times greater than the formation rate in the n-type silicon.

  13. Wet steam wetness measurement in a 10 MW steam turbine

    Directory of Open Access Journals (Sweden)

    Kolovratník Michal

    2014-03-01

    Full Text Available The aim of this paper is to introduce a new design of the extinction probes developed for wet steam wetness measurement in steam turbines. This new generation of small sized extinction probes was developed at CTU in Prague. A data processing technique is presented together with yielded examples of the wetness distribution along the last blade of a 10MW steam turbine. The experimental measurement was done in cooperation with Doosan Škoda Power s.r.o.

  14. Multichannel leak detection system for electrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Muhammed, R.; Abu-Jarad, F.; Al-Jarallah, M.I. (King Fahd Univ. for Petroleum and Minerals, Dhahran (Saudi Arabia))

    1988-01-01

    A multichannel leak detection system has been developed to detect any chemical leak during the electrochemical etching process. It gives an audible and a visible warning when there is a leak at any part of the system. This greatly helps in isolating the defective sample quickly. It can be removed during operation, while the etching process continues on other samples. The circuit is built from standard integrated circuits and has its own power supply. Provisions have been made to connect this system to the computer for recording date, time and location of the leaky unetched samples. (author).

  15. Fast Etching of Molding Compound by an Ar/O2/CF4 Plasma and Process Improvements for Semiconductor Package Decapsulation

    NARCIS (Netherlands)

    Tang, J.; Gruber, D.; Schelen, J.B.J.; Funke, H.J.; Beenakker, C.I.M.

    2012-01-01

    Decapsulation of a SOT23 semiconductor package with 23 um copper wire bonds is conducted with an especially designed microwave induced plasma system. It is found that a 30%-60% CF4 addition in the O2/CF4 etchant gas results in high molding compound etching rate. Si3N4 overetching which is

  16. Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS

    Science.gov (United States)

    Rao, A. V. Narasimha; Swarnalatha, V.; Pal, P.

    2017-12-01

    Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using silicon bulk micromachining. The use of Si{110} in MEMS is inevitable when a microstructure with vertical sidewall is to be fabricated using wet anisotropic etching. In most commonly employed etchants (i.e. TMAH and KOH), potassium hydroxide (KOH) exhibits higher etch rate and provides improved anisotropy between Si{111} and Si{110} planes. In the manufacturing company, high etch rate is demanded to increase the productivity that eventually reduces the cost of end product. In order to modify the etching characteristics of KOH for the micromachining of Si{110}, we have investigated the effect of hydroxylamine (NH2OH) in 20 wt% KOH solution. The concentration of NH2OH is varied from 0 to 20% and the etching is carried out at 75 °C. The etching characteristics which are studied in this work includes the etch rates of Si{110} and silicon dioxide, etched surface morphology, and undercutting at convex corners. The etch rate of Si{110} in 20 wt% KOH + 15% NH2OH solution is measured to be four times more than that of pure 20 wt% KOH. Moreover, the addition of NH2OH increases the undercutting at convex corners and enhances the etch selectivity between Si and SiO2.

  17. Silica-based microcavity fabricated by wet etching

    Science.gov (United States)

    Long, H.; Yang, W.; Ying, L. Y.; Zhang, B. P.

    2017-05-01

    Not Available Project supported by the Postdoctoral Science Foundation of China (Grant No. 2015M582041) and the Special Project on the Integration of Industry, Education and Research of Aviation Industry Corporation of China.

  18. TESTING SOLIDS SETTING APPARATUSES FOR DESIGN AND OPERATION OF WET-WEATHER FLOW SOLIDS-LIQUID SEPARATION PROCESSES

    Science.gov (United States)

    This study was a side-by-side comparison of two settling evaluation methods: one traditional and one new. The project investigated whether these column tests were capable of capturing or representing the rapidly settling particles present in wet-weather flows (WWF). The report r...

  19. Vaginitis test - wet mount

    Science.gov (United States)

    Wet prep - vaginitis; Vaginosis - wet mount; Trichomoniasis - wet mount; Vaginal candida - wet mount ... a rash, painful intercourse, or odor after intercourse. Trichomoniasis , a sexually transmitted disease. Vaginal yeast infection .

  20. Wet chemical thinning of molybdenum disulfide down to its monolayer

    Energy Technology Data Exchange (ETDEWEB)

    Amara, Kiran Kumar [Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 (Singapore); Chu, Leiqiang; Kumar, Rajeev [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551 (Singapore); Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Toh, Minglin [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551 (Singapore); Eda, Goki, E-mail: g.eda@nus.edu.sg [Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551 (Singapore); Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)

    2014-09-01

    We report on the preparation of mono- and bi-layer molybdenum disulfide (MoS{sub 2}) from a bulk crystal by facile wet chemical etching. We show that concentrated nitric acid (HNO{sub 3}) effectively etches thin MoS{sub 2} crystals from their edges via formation of MoO{sub 3}. Interestingly, etching of thin crystals on a substrate leaves behind unreacted mono- and bilayer sheets. The flakes obtained by chemical etching exhibit electronic quality comparable to that of mechanically exfoliated counterparts. Our findings indicate that the self-limiting chemical etching is a promising top-down route to preparing atomically thin crystals from bulk layer compounds.

  1. Characterization of wet pad surface in chemical mechanical polishing (CMP) process with full-field optical coherence tomography (FF-OCT).

    Science.gov (United States)

    Choi, Woo June; Jung, Sung Pyo; Shin, Jun Geun; Yang, Danning; Lee, Byeong Ha

    2011-07-04

    Chemical mechanical polishing (CMP) is a key process for global planarization of silicon wafers for semiconductors and AlTiC wafers for magnetic heads. Removal rate of wafer material is directly dependent on the surface roughness of a CMP pad, thus the structure of the pad surface has been evaluated with variable techniques. However, under in situ CMP process, the measurements have been severely limited due to the existence of polishing fluids including the slurry on the pad surface. In here, we newly introduce ultra-high resolution full-field optical coherence tomography (FF-OCT) to investigate the surface of wet pads. With FF-OCT, the wet pad surface could be quantitatively characterized in terms of the polishing pad lifetime, and also be three-dimensionally visualized. We found that reasonable polishing span could be evaluated from the surface roughness measurement and the groove depth measurement made by FF-OCT.

  2. Excimer laser etching of polyimide

    Science.gov (United States)

    Brannon, J. H.; Lankard, J. R.; Baise, A. I.; Burns, F.; Kaufman, J.

    1985-09-01

    It is reported that thin films of polyimide are efficiently etched in air at pulsed excimer laser wavelengths of 248, 308, and 351 nm. Etch rate versus incident fluence data are found to obey a Beer-Lambert etching relation. Sharp laser fluence thresholds for significant etching are found to correlate with the wavelength-dependent absorption coefficient. The absorbed energy density required to initiate significant etching is found, within experimental error, to be independent of the wavelengths examined. It is felt that this information demonstrates the predominantly thermal nature of the laser etching mechanism. Additionally, infrared spectroscopy and coupled gas chromatography/mass spectroscopy were used to identify several gases evolved during pulsed laser etching of polyimide in both air and vacuum.

  3. Development and Optimization of a Wet Granulation Process at Elevated Temperature for a Poorly Compactible Drug Using Twin Screw Extruder for Continuous Manufacturing.

    Science.gov (United States)

    Meena, Anuprabha K; Desai, Divyakant; Serajuddin, Abu T M

    2017-02-01

    The objective of this study was to enhance tabletability of a poorly compactible drug, acetaminophen, by wet granulation using twin screw extruder at high temperature. It was desired that there would be minimum amounts of excipients used and the granules obtained after extrusion would be dry and fall within a size range suitable for tableting without any further processing. Mixtures of acetaminophen (95%) with binders (5% povidone or partially pregelatinized starch) were wet granulated through twin screw extruder at 70°C by adding 7% w/w water. The process had a short granulation time (90% granules in the size range of 125 to 1000 μm (1.7 MPa, which was superior to that of tablets prepared by conventional high shear wet granulation. As the granules could be extruded continuously and did not require drying and milling, the method was amenable to continuous processing. Copyright © 2017 American Pharmacists Association®. Published by Elsevier Inc. All rights reserved.

  4. High-resolution etching of MoSi using electron beam patterned chemically amplified resist

    Science.gov (United States)

    Mueller, Mark; Komarov, Serguei; Baik, Ki-Ho

    2003-08-01

    High resolution etching of MoSi for photomask processing places new requirements on etching processes. As resist features are sized to 100 nm and below, it is first necessary to duplicate these features first into a chrome over-layer. After resist is stripped, this chrome over-layer is used for etching MoSi. Both chrome and MoSi etched profiles require near-vertical sidewalls, good CD (critical dimension) uniformity, good linearity, and CD mean-to-target (MTT). Additional requirements of etched MoSi include minimal roughness on exposed quartz, selectivity to chrome and quartz, phase angle target and phase angle uniformity, etch depth global uniformity, and etch depth uniformity as a function of feature size. An ETEC integrated process is used for the application of resist, patterning, and all subsequent processing. Chemically amplified resist is patterned with the 50 kV MEBES Quadra or MEBES eXara raster scan electron beam writer, allowing for patterning of small features with vertical resist profiles. Plates are etched in a Tetra photomask etch system for projecting resist images into chrome and MoSi. Etch processes have been developed specifically for etching small features in order to meet the requirements of 65 nm node lithography. An optimized etch process window is capable of patterning MoSi features below 100 nm sizes with near-vertical sidewall, 1 um. Excellent CD uniformity and CD etch loading performance are demonstrated. Micro-profilometry is employed to measure the MoSi etch depths of features of varying sizes, and to quantify the effect of loading on MoSi etch depth. SEM micrographs illustrate sidewall profiles resulting from small feature etching.

  5. Etching process optimization using NH{sub 4}Cl aqueous solution to texture ZnO:Al films for efficient light trapping in flexible thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S., E-mail: susanamaria.fernandez@ciemat.es [CIEMAT, Departamento de Energias Renovables, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Naranjo, F.B. [Grupo de Ingenieria Fotonica, Universidad de Alcala, Departamento de Electronica, Alcala de Henares, Madrid (Spain); Gandia, J.J. [CIEMAT, Departamento de Energias Renovables, Madrid (Spain)

    2012-04-02

    0.5 {mu}m-thick aluminum-doped zinc oxide (ZnO:Al) films were deposited at 100 Degree-Sign C on polyethylene terephthalate substrates by Radio Frequency magnetron sputtering. The as-deposited films were compact and dense, showing grain sizes of 32.0 {+-} 6.4 nm and resistivities of (8.5 {+-} 0.7) Multiplication-Sign 10{sup -4} {Omega} cm. The average transmittance in the visible wavelength range of the structure ZnO:Al/PET was around 77%. The capability of a novel two-step chemical etching using diluted NH{sub 4}Cl aqueous solution to achieve efficient textured surfaces for light trapping was analyzed. The results indicated that both the aqueous solution and the etching method resulted appropriated to obtain etched surfaces with a surface roughness of 32 {+-} 5 nm, haze factors at 500 nm of 9% and light scattering at angles up to 50 Degree-Sign . To validate all these results, a commercially ITO coated PET substrate was used for comparison.

  6. Analysis of Pseudo-polymorphism Conversion of Theophylline During Wet Granulation and Drying Processes and Effect of Binder on Dehydration and Amorphization

    Science.gov (United States)

    Sakamoto, Tomoaki; Sasaki, Tetsuo; Katori, Noriko; Goda, Yukihiro

    2016-10-01

    We conducted a time-course analysis of the pseudo-polymorphism conversion (i.e., the hydration and dehydration) of the xanthine-related compound theophylline during wet granulation and drying processes, using terahertz spectroscopy. We also investigated the amorphization mechanism of theophylline hydrate during a drying process in a vacuum using terahertz, mid-infrared (mid-IR), and near-infrared (near-IR) spectroscopy. After a high-shear granulation process using a mixture of theophylline, hydroxypropyl cellulose (HPC), and water, the terahertz spectrum (which was similar to that of an anhydride) was changed to a spectrum that was quite similar to that of a monohydrate. This result suggests that (1) an anhydride was converted to a monohydrate during the wet granulation process and (2) the spectrum was changed to the original waveform after the drying process with heat. This phenomenon indicates that the theophylline monohydrate was reconverted to an anhydride during the drying process. When wet granules were dried in a vacuum, the terahertz absorption lessened and finally disappeared with the passage of time, suggesting that the theophylline monohydrate in the granules was converted to an amorphous state. During the drying process with heat, the dehydration progressed temperature dependently regardless of the presence/absence of HPC. In addition, the reconversion from a monohydrate to an anhydride was completed concurrently with the completion of dehydration. The conversion rate of theophylline from a monohydrate to an amorphous form in granules (with HPC) was faster than that without HPC. This observation suggests that HPC promotes the amorphization of theophylline.

  7. Application of In-line Focused Beam Reflectance Measurement to Brivanib Alaninate Wet Granulation Process to Enable Scale-up and Attribute-based Monitoring and Control Strategies.

    Science.gov (United States)

    Narang, Ajit S; Stevens, Timothy; Macias, Kevin; Paruchuri, Srinivasa; Gao, Zhihui; Badawy, Sherif

    2017-01-01

    Application of in-line real-time process monitoring using a process analytical technology for granule size distribution can enable quality-by-design development of a drug product and enable attribute-based monitoring and control strategies. In this study, an in-line laser focused beam reflectance measurement (FBRM) C35 probe was used to investigate the effect of formulation and process parameters on the granule growth profile over time during the high shear wet granulation of a high drug load formulation of brivanib alaninate. The probe quantitatively captured changes in the granule chord length distribution (CLD) with the progress of granulation and delineated the impact of water concentration used during granulation. The results correlated well with offline particle size distribution measured by nested sieve analyses. An end point indication algorithm was developed that was able to successfully track the process time needed to reach the target CLD. Testing of the brivanib alaninate granulation through 25-fold scale-up of the batch process indicated that the FBRM CLD profile can provide a scale-independent granule attribute-based process fingerprint. These studies highlight the ability of FBRM to quantitate a granule attribute of interest during wet granulation that can be used as an attribute-based scale-up and process monitoring and control parameter. Copyright © 2016 American Pharmacists Association®. Published by Elsevier Inc. All rights reserved.

  8. Technique for etching monolayer and multilayer materials

    Science.gov (United States)

    Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

    2015-10-06

    A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

  9. Highly selective dry etching of polystyrene-poly(methyl methacrylate) block copolymer by gas pulsing carbon monoxide-based plasmas

    Science.gov (United States)

    Miyazoe, Hiroyuki; Jagtiani, Ashish V.; Tsai, Hsin-Yu; Engelmann, Sebastian U.; Joseph, Eric A.

    2017-05-01

    We propose a very selective PMMA removal method from poly(styrene-block-methyl methacrylate) (PS-b-PMMA) copolymer using gas pulsing cyclic etching. Flow ratio of hydrogen (H2) added to carbon monoxide (CO) plasma was periodically changed to control etch and deposition processes on PS. By controlling the process time of each etch and deposition step, full PMMA removal including etching of the neutral layer was demonstrated at 28 nm pitch, while PS thickness remained intact. This is more than 10 times higher etch selectivity than conventional continuous plasma etch processes using standard oxygen (O2), CO-H2 and CO-O2-based chemistries.

  10. A novel surface micromachining process to fabricate AlN unimorph suspensions and its application for RF resonators

    NARCIS (Netherlands)

    Saravanan, S.; Saravanan, S.; Berenschot, Johan W.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt

    2006-01-01

    A novel surface micromachining process is reported for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for micro actuator applications. Wet anisotropic etching of AlN thin film is used with a Cr metal mask layer in the microfabrication process. Tetra methyl

  11. Analysis of the VPg-proteinase (NIa) encoded by tobacco etch potyvirus: effects of mutations on subcellular transport, proteolytic processing, and genome amplification.

    OpenAIRE

    Schaad, M C; Haldeman-Cahill, R; Cronin, S; Carrington, J C

    1996-01-01

    A mutational analysis was conducted to investigate the functions of the tobacco etch potyvirus VPg-proteinase (NIa) protein in vivo. The NIa N-terminal domain contains the VPg attachment site, whereas the C-terminal domain contains a picornavirus 3C-like proteinase. Cleavage at an internal site separating the two domains occurs in a subset of NIa molecules. The majority of NIa molecules in TEV-infected cells accumulate within the nucleus. By using a reporter fusion strategy, the NIa nuclear l...

  12. Nanostructured silicon via metal assisted catalyzed etch (MACE): chemistry fundamentals and pattern engineering

    Science.gov (United States)

    Toor, Fatima; Miller, Jeffrey B.; Davidson, Lauren M.; Nichols, Logan; Duan, Wenqi; Jura, Michael P.; Yim, Joanne; Forziati, Joanne; Black, Marcie R.

    2016-10-01

    There are a range of different methods to generate a nanostructured surface on silicon (Si) but the most cost effective and optically interesting is the metal assisted wet chemical etching (MACE) (Koynov et al 2006 Appl. Phys. Lett. 88 203107). MACE of Si is a controllable, room-temperature wet-chemical technique that uses a thin layer of metal to etch the surface of Si, leaving behind various nano- and micro-scale surface features or ‘black silicon’. MACE-fabricated nanowires (NWs) provide improved antireflection and light trapping functionality (Toor et al 2016 Nanoscale 8 15448-66) compared with the traditional ‘iso-texturing’ (Campbell and Green 1987 J. Appl. Phys. 62 243-9). The resulting lower reflection and improved light trapping can lead to higher short circuit currents in NW solar cells (Toor et al 2011 Appl. Phys. Lett. 99 103501). In addition, NW cells can have higher fill factors and voltages than traditionally processed cells, thus leading to increased solar cell efficiencies (Cabrera et al 2013 IEEE J. Photovolt. 3 102-7). MACE NW processing also has synergy with next generation Si solar cell designs, such as thin epitaxial-Si and passivated emitter rear contact (Toor et al 2016 Nanoscale 8 15448-66). While several companies have begun manufacturing black Si, and many more are researching these techniques, much of the work has not been published in traditional journals and is publicly available only through conference proceedings and patent publications, which makes learning the field challenging. There have been three specialized review articles published recently on certain aspects of MACE or black Si, but do not present a full review that would benefit the industry (Liu et al 2014 Energy Environ. Sci. 7 3223-63 Yusufoglu et al 2015 IEEE J. Photovolt. 5 320-8 Huang et al 2011 Adv. Mater. 23 285-308). In this feature article, we review the chemistry of MACE and explore how changing parameters in the wet etch process effects the resulting

  13. Dry etching of ITO by magnetic pole enhanced inductively coupled plasma for display and biosensing devices

    Energy Technology Data Exchange (ETDEWEB)

    Meziani, T. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020 Ispra (Vatican City State, Holy See,) (Italy)]. E-mail: tarik.meziani@jrc.it; Colpo, P. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020 Ispra (Va) (Italy)]. E-mail: pascal.colpo@jrc.it; Lambertini, V. [Centro Ricerche Fiat, Strada Torino 50, 10043 Orbassano (TO) (Italy); Ceccone, G. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020 Ispra (Va) (Italy); Rossi, F. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020 Ispra (Va) (Italy)

    2006-03-15

    The dry etching of indium tin oxide (ITO) layers deposited on glass substrates was investigated in a high density inductively coupled plasma (ICP) source. This innovative low pressure plasma source uses a magnetic core in order to concentrate the electromagnetic energy on the plasma and thus provides for higher plasma density and better uniformity. Different gas mixtures were tested containing mainly hydrogen, argon and methane. In Ar/H{sub 2} mixtures and at constant bias voltage (-100 V), the etch rate shows a linear dependence with input power varying the same way as the ion density, which confirms the hypothesis that the etching process is mainly physical. In CH{sub 4}/H{sub 2} mixtures, the etch rate goes through a maximum for 10% CH{sub 4} indicating a participation of the radicals to the etching process. However, the etch rate remains quite low with this type of gas mixture (around 10 nm/min) because the etching mechanism appears to be competing with a deposition process. With CH{sub 4}/Ar mixtures, a similar feature appeared but the etch rate was much higher, reaching 130 nm/min at 10% of CH{sub 4} in Ar. The increase in etch rate with the addition of a small quantity of methane indicates that the physical etching process is enhanced by a chemical mechanism. The etching process was monitored by optical emission spectroscopy that appeared to be a valuable tool for endpoint detection.

  14. State of the art etch-and-rinse adhesives.

    Science.gov (United States)

    Pashley, David H; Tay, Franklin R; Breschi, Lorenzo; Tjäderhane, Leo; Carvalho, Ricardo M; Carrilho, Marcela; Tezvergil-Mutluay, Arzu

    2011-01-01

    The aim of this study was to explore the therapeutic opportunities of each step of 3-step etch-and-rinse adhesives. Etch-and-rinse adhesive systems are the oldest of the multi-generation evolution of resin bonding systems. In the 3-step version, they involve acid-etching, priming and application of a separate adhesive. Each step can accomplish multiple goals. Acid-etching, using 32-37% phosphoric acid (pH 0.1-0.4) not only simultaneously etches enamel and dentin, but the low pH kills many residual bacteria. Some etchants include anti-microbial compounds such as benzalkonium chloride that also inhibits matrix metalloproteinases (MMPs) in dentin. Primers are usually water and HEMA-rich solutions that ensure complete expansion of the collagen fibril meshwork and wet the collagen with hydrophilic monomers. However, water alone can re-expand dried dentin and can also serve as a vehicle for protease inhibitors or protein cross-linking agents that may increase the durability of resin-dentin bonds. In the future, ethanol or other water-free solvents may serve as dehydrating primers that may also contain antibacterial quaternary ammonium methacrylates to inhibit dentin MMPs and increase the durability of resin-dentin bonds. The complete evaporation of solvents is nearly impossible. Manufacturers may need to optimize solvent concentrations. Solvent-free adhesives can seal resin-dentin interfaces with hydrophobic resins that may also contain fluoride and antimicrobial compounds. Etch-and-rinse adhesives produce higher resin-dentin bonds that are more durable than most 1 and 2-step adhesives. Incorporation of protease inhibitors in etchants and/or cross-linking agents in primers may increase the durability of resin-dentin bonds. The therapeutic potential of etch-and-rinse adhesives has yet to be fully exploited. Copyright © 2010 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

  15. Photospectroscopically observed pore-space correlations of a wetting fluid during the drying process in nanoporous Vycor glass.

    Science.gov (United States)

    Ogawa, Shigeo; Nakamura, Jiro

    2015-04-01

    We use light scattering to study spatial correlations in the pore space of Vycor glass upon draining a wetting fluid. We analyze the transmission spectrum of forward-scattered light on the basis of the theory of dielectric constant fluctuation, whereas conventional light scattering analyzes the scattered light at small angles of monochromatic incident light. Assuming that the drained pores, which are surrounded by filled pores, exhibit long-range correlations of a fractal dimension of 2.5, we analytically derive the corresponding turbidity. The slight deviation from the λ(-4) Rayleigh wavelength dependence directly provides the correlation length of the interconnected network of drained pores. The estimated length, ranging from 0.5 to 18 nm at most, is almost the same order as that indirectly estimated from our previous simple effective Rayleigh scatterer model.

  16. ESEEM of industrial silica-bearing powders: reactivity of defects during wet processing in the ceramics production

    Science.gov (United States)

    Romanelli, Maurizio; Di Benedetto, Francesco; Fornaciai, Gabriele; Innocenti, Massimo; Montegrossi, Giordano; Pardi, Luca A.; Zoleo, Alfonso; Capacci, Fabio

    2015-05-01

    A study is undertaken to ascertain whether changes in the speciation of inorganic radicals are occurring during the ceramic industrial production that involves abundant silica powders as raw material. Industrial dusts were sampled in two ceramic firms, immediately after the wet mixing stage, performed with the aid of a relevant pressure. The dusts were then characterised by means of X-ray diffraction, analysis of the trace elements through chemical methods, granulometry, continuous-wave electron paramagnetic resonance (EPR) and pulsed electron spin echo envelope modulation (ESEEM) spectroscopies. The results of the characterisation point to a relevant change in the speciation of the two samples; namely, a prevailing contribution due to an inorganic radical different from that pertaining to pure quartz is pointed out. The combined interpretation of EPR and ESEEM data suggests the attribution of the main paramagnetic contribution to the A-centre in kaolinite, a constituent that is added to pure quartz at the initial stage of the ceramic production. In one of the two samples, a second weak EPR signal is attributed to the quartz's hAl species. By taking into account the relative quantities of quartz and kaolinite mixed in the two samples, and the relative abundances of the two radical species, we propose that the partial or complete suppression of the hAl species in favour of the A-centre of kaolinite has occurred. Although this change is apparently fostered by the mixture between quartz and another radical-bearing raw material, kaolinite, the suppression of the hAl centre of quartz is ascribed to the role played by the pressure and the wet environment during the industrial mixing procedure. This suppression provides a net change of radical speciation associated with quartz, when this phase is in contact with workers' respiratory system.

  17. High-density carbon nanotube wet-laid buckypapers with enhanced strength and conductivity using a high-pressure homogenization process

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jun; Jang, Si Hoon; Park, No Hyung; Jeong, Won Young; Lim, Dae Young [Human and Culture Convergence Technology Group, Korea Institute of Industrial Technology (KITECH), Ansan (Korea, Republic of); Oh, Jun Young; Yang, Seung Jae [Dept. of Applied Organic Materials Engineering, Inha University, Incheon (Korea, Republic of)

    2017-04-15

    In this work, we prepared homogeneously dispersed carbon nanotubes in water using a high-pressure homogenizer, while high-density carbon nanotube buckypapers were prepared by wet-laid process. The strength and conductivity of the buckypaper were increased dramatically after the high-pressure homogenization because of the increased density and uniformity of the paper. In addition, the buckypapers containing various additives and treated with SOCl{sub 2} exhibited further increase of strength and conductivity resulting from the binding and the p-type doping effect. The buckypapers with high electrical conductivity exhibited superior electromagnetic interference shielding effectiveness that could be applied for structural shielding materials.

  18. Effect of Heat Drawing Process on Mechanical Properties of Dry-Jet Wet Spun Fiber of Linear Low Density Polyethylene/Carbon Nanotube Composites

    OpenAIRE

    Kim, Jong Won; Lee, Joon Seok

    2017-01-01

    Polyethylene is one of the most commonly used polymer materials. Even though linear low density polyethylene (LLDPE) has better mechanical properties than other kinds of polyethylene, it is not used as a textile material because of its plastic behavior that is easy to break at the die during melt spinning. In this study, LLDPE fibers were successfully produced with a new approach using a dry-jet wet spinning and a heat drawing process. The fibers were filled with carbon nanotubes (CNTs) to im...

  19. Development of a process map: A step towards a regime map for steady-state high shear wet twin screw granulation

    DEFF Research Database (Denmark)

    Kumar, Ashish; Dhondt, Jens; Vercruysse, Jurgen

    2016-01-01

    Twin-screw granulation is an emerging continuous granulation technique in the pharmaceutical industry. The flexibility in process settings such as the binder addition method (wet vs. dry), screw configuration, screw speed and material throughput allows to modify the granule size and shape. However...... with polyvinylpyrrolidone (2.5%, w/w) as binder. The screw configuration of the 25 mm diameter co-rotating twin-screw granulator from the ConsiGma-25 unit consisted of one or two kneading zones of six kneading elements each (1 x 6 and 2 x 6, respectively), at a stagger angle of 60. The specific mechanical energy, which...

  20. Quantum confinement and electroluminescence in ultrathin silicon nanowires fabricated by a maskless etching technique

    Science.gov (United States)

    Irrera, A.; Artoni, P.; Iacona, F.; Pecora, E. F.; Franzò, G.; Galli, M.; Fazio, B.; Boninelli, S.; Priolo, F.

    2012-02-01

    We present a novel approach for the direct synthesis of ultrathin Si nanowires (NWs) exhibiting room temperature light emission. The synthesis is based on a wet etching process assisted by a metal thin film. The thickness-dependent morphology of the metal layer produces uncovered nanometer-size regions which act as precursor sites for NW formation. The process is cheap, fast, maskless and compatible with Si technology. Very dense arrays of long (several micrometers) and small (diameter of 5-9 nm) NWs have been synthesized. An efficient room temperature luminescence, visible with the naked eye, is observed when NWs are optically excited, exhibiting a blue-shift with decreasing NW size in agreement with quantum confinement effects. A prototype device based on Si NWs has been fabricated showing a strong and stable electroluminescence at low voltages. The relevance and the perspectives of the reported results are discussed, opening the route toward novel applications of Si NWs.

  1. Cradle-to-gate life cycle assessment of the dry etching step in the manufacturing of photovoltaic cells

    Directory of Open Access Journals (Sweden)

    Otto Andersen

    2014-11-01

    Full Text Available A new photovoltaic silicon crystalline solar cell dry chemical etching process (DCEP is developed. It is an alternative to the current State-of-the-Art (SoA wet chemical etching process (WCEP, associated with relatively large environmental loadings in the form of high water consumption and emissions of greenhouse gases with high Global Warming Potential (GWP. In order to compare the environmental impacts of DCEP to the corresponding impacts from WCEP, a comparative attributional life cycle assessment (LCA is conducted. From the LCA it can be concluded that the DCEP will lead to 86% reduction in water consumption compared to WCEP (acidic, and 89% reduction compared to WCEP (alkaline. The emissions of greenhouse gases, as expressed by the GWP100 indicator of the etching step, are also reduced with 63% and 20% respectively, when compared with current SoA acidic and alkaline WCEP. The toxicity impacts are also assessed to be lower for the DCEP compared to WCEP technologies, although the uncertainty is relatively high for the applied toxicity indicators. All in all, DCEP can reduce the CO2eq emissions of solar photovoltaic systems production by 5-10%.

  2. Performance of a universal adhesive on etched and non-etched surfaces: Do the results match the expectations?

    Energy Technology Data Exchange (ETDEWEB)

    Grégoire, Geneviève, E-mail: genevieve.gregoire@univ-tlse3.fr [Department of Biomaterials, Faculty of Odontology, University Toulouse III, 31062 Toulouse (France); Sharrock, Patrick, E-mail: patrick.sharrock@gmail.com [CNRS UMR 5302, University Toulouse III, Mines-Albi, 81013 Albi (France); Prigent, Yann, E-mail: prigent@chimie.ups-tlse.fr [Institut de Chimie de Toulouse (ICT) – FR 2599, Faculté des Sciences et de l' Ingénierie, University Toulouse III, 31062 Toulouse (France)

    2016-09-01

    A universal adhesive was applied to human dentin in both the etched and rinsed state and the normal non etched state, to compare the resulting properties and detect any significant differences. The study focused on observations of the hybrid layer by scanning electron microscopy and on fluid permeation measurements as a function of time. Spectroscopic characterizations included infrared and differential calorimetric curves of the samples. The results obtained show non-statistically significant fluid permeability between the two sample types. Both the etched and rinsed samples and the non-etched ones showed similar homogeneous hybrid layers that reduced the fluid flow, and corresponded to well spread polymer coatings. The infrared results illustrated the spectra obtained on going from the outside adhesive layer to the inside portion of the dentin-polymer interface and did not reveal any intermediate zone resembling demineralized collagen that would be water saturated and not infiltrated with adhesive. The Differential Scanning Calorimetry (DSC) curves corresponded to the curves obtained with ethanol wet bonding in that free water (melting at 0 °C) was removed by the universal adhesive, and that no collagen melting was observed for the non-etched samples. The Diffusion-Ordered Spectroscopy Nuclear Magnetic Resonance (DOSY NMR) spectrum of the virgin adhesive showed the presence of water and ethanol solvents and indicated that several monomer or prepolymer molecules were present with multiple acrylic functional groups with diffusion coefficients related to molecular weights. Overall, the results show that universal adhesive can be used in the milder self-etch mode and that more aggressive etch and rinse procedure can be reserved for the occasions with sclerotic dentin or enamel regions more difficult to treat.

  3. Effect of temperature and silicon resistivity on the elaboration of silicon nanowires by electroless etching

    Energy Technology Data Exchange (ETDEWEB)

    Fellahi, Ouarda, E-mail: fellahi_warda@yahoo.fr [Silicon Technology Development Unit, 02 Bd Frantz Fanon, BP 140 Alger-7 Merveilles, Algiers (Algeria); Hadjersi, Toufik [Silicon Technology Development Unit, 02 Bd Frantz Fanon, BP 140 Alger-7 Merveilles, Algiers (Algeria); Maamache, Mustapha [Laboratoire de Physique Quantique et Systemes Dynamiques, Universite Ferhat Abbas de Setif (Algeria); Bouanik, Sihem; Manseri, Amar [Silicon Technology Development Unit, 02 Bd Frantz Fanon, BP 140 Alger-7 Merveilles, Algiers (Algeria)

    2010-11-01

    The morphology of silicon nanowire (SiNW) layers formed by Ag-assisted electroless etching in HF/H{sub 2}O{sub 2} solution was studied. Prior to the etching, the Ag nanoparticles were deposited on p-type Si(1 0 0) wafers by electroless metal deposition (EMD) in HF/AgNO{sub 3} solution at room temperature. The effect of etching temperature and silicon resistivity on the formation process of nanowires was studied. The secondary ion mass spectra (SIMS) technique is used to study the penetration of silver in the etched layers. The morphology of etched layers was investigated by scanning electron microscope (SEM).

  4. Anisotropic etching of tungsten-nitride with ICP system

    CERN Document Server

    Lee, H G; Moon, H S; Kim, S H; Ahn, J; Sohn, S

    1998-01-01

    Inductively Coupled Plasma ion streaming etching of WN sub x film is investigated for preparing x-ray mask absorber patterns. SF sub 6 gas plasma provides for effective etching of WN sub x , and the addition of Ar and N sub 2 results in higher dissociation of SF sub 6 and sidewall passivation effect, respectively. Microloading effect observed for high aspect ratio patterns is minimized by multi-step etching and O sub 2 plasma treatment process. As a result, 0.18 mu m WN sub x line and space patterns with vertical sidewall profile are successfully fabricated.

  5. Chlorine-based plasma etching of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Shul, R.J.; Briggs, R.D. [Sandia National Labs., Albuquerque, NM (United States); Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Constantine, C.; Baratt, C. [Plasma-Therm, Inc., Saint Petersburg, FL (United States)

    1997-02-01

    The wide band gap group-III nitride materials continue to generate interest in the semiconductor community with the fabrication of green, blue, and ultraviolet light emitting diodes (LEDs), blue lasers, and high temperature transistors. Realization of more advanced devices requires pattern transfer processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 {micro}m/min. The utilization of high-density chlorine-based plasmas including electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) systems has resulted in improved GaN etch quality over more conventional reactive ion etch (RIE) systems.

  6. A novel nano-nonwoven fabric with three-dimensionally dispersed nanofibers: entrapment of carbon nanofibers within nonwovens using the wet-lay process

    Science.gov (United States)

    Karwa, Amogh N.; Barron, Troy J.; Davis, Virginia A.; Tatarchuk, Bruce J.

    2012-05-01

    This study demonstrates, for the first time, the manufacturing of novel nano-nonwovens that are comprised of three-dimensionally distributed carbon nanofibers within the matrices of traditional wet-laid nonwovens. The preparation of these nano-nonwovens involves dispersing and flocking carbon nanofibers, and optimizing colloidal chemistry during wet-lay formation. The distribution of nanofibers within the nano-nonwoven was verified using polydispersed aerosol filtration testing, air permeability, low surface tension liquid capillary porometry, SEM and cyclic voltammetry. All these characterization techniques indicated that nanofiber flocks did not behave as large solid clumps, but retained the ‘nanoporous’ structure expected from nanofibers. These nano-nonwovens showed significant enhancements in aerosol filtration performance. The reduction-oxidation reactions of the functional groups on nanofibers and the linear variation of electric double-layer capacitance with nanofiber loading were measured using cyclic voltammetry. More than 65 m2 (700 ft2) of the composite were made during the demonstration of process scalability using a Fourdrinier-type continuous pilot papermaking machine. The scalability of the process with the control over pore size distribution makes these composites very promising for filtration and other nonwoven applications.

  7. A novel nano-nonwoven fabric with three-dimensionally dispersed nanofibers: entrapment of carbon nanofibers within nonwovens using the wet-lay process.

    Science.gov (United States)

    Karwa, Amogh N; Barron, Troy J; Davis, Virginia A; Tatarchuk, Bruce J

    2012-05-11

    This study demonstrates, for the first time, the manufacturing of novel nano-nonwovens that are comprised of three-dimensionally distributed carbon nanofibers within the matrices of traditional wet-laid nonwovens. The preparation of these nano-nonwovens involves dispersing and flocking carbon nanofibers, and optimizing colloidal chemistry during wet-lay formation. The distribution of nanofibers within the nano-nonwoven was verified using polydispersed aerosol filtration testing, air permeability, low surface tension liquid capillary porometry, SEM and cyclic voltammetry. All these characterization techniques indicated that nanofiber flocks did not behave as large solid clumps, but retained the 'nanoporous' structure expected from nanofibers. These nano-nonwovens showed significant enhancements in aerosol filtration performance. The reduction-oxidation reactions of the functional groups on nanofibers and the linear variation of electric double-layer capacitance with nanofiber loading were measured using cyclic voltammetry. More than 65 m² (700 ft²) of the composite were made during the demonstration of process scalability using a Fourdrinier-type continuous pilot papermaking machine. The scalability of the process with the control over pore size distribution makes these composites very promising for filtration and other nonwoven applications.

  8. Magnetic behavior of iron-modified MCM-41 correlated with clustering processes from the wet impregnation method

    Energy Technology Data Exchange (ETDEWEB)

    Cuello, Natalia I.; Elías, Verónica R. [Centro de Investigación y Tecnología Química (CITeQ) (UTN-CONICET), Facultad Regional Córdoba. Maestro López y Cruz Roja Argentina, Ciudad Universitaria, Córdoba 5016 (Argentina); Winkler, Elin [Centro Atómico Bariloche, Comisión Nacional de Energía Atómica – CONICET, Avenue Bustillo 9500, San Carlos de Bariloche 8400 (Argentina); Pozo-López, Gabriela; Oliva, Marcos I. [Facultad de Matemática, Astronomía y Física, Universidad Nacional de Córdoba – IFEG, CONICET, Ciudad Universitaria, Córdoba 5000 (Argentina); Eimer, Griselda A., E-mail: geimer@frc.utn.edu.ar [Centro de Investigación y Tecnología Química (CITeQ) (UTN-CONICET), Facultad Regional Córdoba. Maestro López y Cruz Roja Argentina, Ciudad Universitaria, Córdoba 5016 (Argentina)

    2016-06-01

    Magnetic MCM-41 type mesoporous silica materials were synthetized and modified with different iron loadings by the wet impregnation method. The evolution of iron speciation, depending on the metal loading and associated with a particular magnetic behavior was investigated by M vs. H curves, FC–ZFC curves, EPR spectroscopy and other complementary techniques such as SEM, TEM, and chemisorption of pyridine followed by FT-IR studies. A superparamagnetic contribution was larger for the lower loadings suggesting the high dispersion of very small sized iron nanospecies. However, this contribution decreased with increasing metal loading due to the growth of magnetically blocked nanoparticles (hematite) on the outer surface. Finally, a bimodal size distribution for the superparamagnetic nanospecies could be inferred; then the anisotropy constant for this phase and the corresponding nanospecies sizes were estimated. - Highlights: • All samples showed a main superparamagnetic contribution. • The oxide particles grow at expense of superparamagnetic nanospecies. • Bimodal distribution of nanospecies in superparamagnetic regime was determined. • The anisotropy constant for superparamagnetic nanospecies was calculated.

  9. Improvement in lipids extraction processes for biodiesel production from wet microalgal pellets grown on diammonium phosphate and sodium bicarbonate combinations.

    Science.gov (United States)

    Shah, Syed Hasnain; Raja, Iftikhar Ahmed; Mahmood, Qaisar; Pervez, Arshid

    2016-08-01

    Biomass productivity and growth kinetics for microalgae grown on sodium bicarbonate and diammonium phosphate were investigated. Different carbon and nitrogen ratios have shown different growth rates and biomass productivity and C:N ratio 50:10 as mgL(-1) has shown the best production than all. For effective lipids extraction from biomass thermolysis and sonolysis were carried out from wet biomass. Sonolysis at 2.3W intensity for 5min has released 8.58mg at neutral pH. More quantity of lipids was extracted when extraction was made at pH 4 and 10 which resulted 9mg and 9.28mg lipids respectively. Thermal treatment at 100°C for 10min has released 12.82mg lipid at neutral pH. In the same thermolysis at pH 4 and 10 more quantity of lipids was extracted which were 15.16mg and 14.81mg respectively. Finally transesterified lipids were analyzed through GC-MS for FAME composition analysis. Copyright © 2016 Elsevier Ltd. All rights reserved.

  10. Postoperative sensitivity of self etch versus total etch adhesive.

    Science.gov (United States)

    Yousaf, Ajmal; Aman, Nadia; Manzoor, Manzoor Ahmed; Shah, Jawad Ali; Dilrasheed

    2014-06-01

    To compare postoperative sensitivity following composite restoration placed in supra gingival class-V cavities using self etch adhesive and total etch adhesive. A randomized clinical trial. Operative Dentistry Department of Armed Forces Institute of Dentistry, Rawalpindi, from July to December 2009. A total of 70 patients having class-V supra gingival carious lesions were divided into two groups. Classes-V cavities not exceeding 3 mm were prepared. One treatment group was treated with self etch adhesive (adhe SE one Ivoclar) and the control group was treated with total-etch adhesive (Eco-Etch Ivoclar) after acid etching with 37% phosphoric acid. Light cured composite (Te-Econom Ivoclar) restoration was placed for both groups and evaluated for postoperative sensitivity immediately after restoration, after 24 hours and after one week. Data was recorded on visual analogue scale. Comparison of sensitivity between the two treatment groups on application cold stimulus after 24 hours of restoration showed significant difference; however, no statistically significant difference was observed at baseline, immediately after restoration and at 1 week follow-up with cold stimulus or compressed air application. Less postoperative sensitivity was observed at postoperative 24 hours assessment in restoration placed using SE adhesives compared to TE adhesives. Thus, the use of SE adhesives may be helpful in reducing postoperative sensitivity during 24 hours after restoration placement.

  11. State of the art etch-and-rinse adhesives

    Science.gov (United States)

    Pashley, David H; Tay, Franklin R; Breschi, Lorenzo; Tjäderhane, Leo; Carvalho, Ricardo M; Carrilho, Marcela; Tezvergil-Mutluay, Arzu

    2013-01-01

    Etch-and-rinse adhesive systems are the oldest of the multi-generation evolution of resin bonding systems. In the 3-step version, they involve acid-etching, priming and application of a separate adhesive. Each step can accomplish multiple goals. This review explores the therapeutic opportunities of each separate step. Acid-etching, using 32-37% phosphoric acid (pH 0.1-0.4) not only simultaneously etches enamel and dentin, but the low pH kills many residual bacteria. Some etchants include anti-microbial compounds such as benzalkonium chloride that also inhibits matrix metalloproteinases (MMPs) in dentin. Primers are usually water and HEMA-rich solutions that ensure complete expansion of the collagen fibril meshwork and wet the collagen with hydrophilic monomers. However, water alone can re-expand dried dentin and can also serve as a vehicle for protease inhibitors or protein cross-linking agents that may increase the durability of resin-dentin bonds. In the future, ethanol or other water-free solvents may serve as dehydrating primers that may also contain antibacterial quaternary ammonium methacrylates to inhibit dentin MMPs and increase the durability of resin-dentin bonds. The complete evaporation of solvents is nearly impossible. Manufacturers may need to optimize solvent concentrations. Solvent-free adhesives can seal resin-dentin interfaces with hydrophobic resins that may also contain fluoride and antimicrobial compounds. Etch-and-rinse adhesives produce higher resin-dentin bonds that are more durable than most 1 and 2-step adhesives. Incorporation of protease inhibitors in etchants and/or cross-linking agents in primers may increase the durability of resin-dentin bonds. The therapeutic potential of etch-and-rinse adhesives has yet to be fully exploited. PMID:21112620

  12. Identification of functional enolase genes of the silkworm Bombyx mori from public databases with a combination of dry and wet bench processes.

    Science.gov (United States)

    Kikuchi, Akira; Nakazato, Takeru; Ito, Katsuhiko; Nojima, Yosui; Yokoyama, Takeshi; Iwabuchi, Kikuo; Bono, Hidemasa; Toyoda, Atsushi; Fujiyama, Asao; Sato, Ryoichi; Tabunoki, Hiroko

    2017-01-13

    Various insect species have been added to genomic databases over the years. Thus, researchers can easily obtain online genomic information on invertebrates and insects. However, many incorrectly annotated genes are included in these databases, which can prevent the correct interpretation of subsequent functional analyses. To address this problem, we used a combination of dry and wet bench processes to select functional genes from public databases. Enolase is an important glycolytic enzyme in all organisms. We used a combination of dry and wet bench processes to identify functional enolases in the silkworm Bombyx mori (BmEno). First, we detected five annotated enolases from public databases using a Hidden Markov Model (HMM) search, and then through cDNA cloning, Northern blotting, and RNA-seq analysis, we revealed three functional enolases in B. mori: BmEno1, BmEno2, and BmEnoC. BmEno1 contained a conserved key amino acid residue for metal binding and substrate binding in other species. However, BmEno2 and BmEnoC showed a change in this key amino acid. Phylogenetic analysis showed that BmEno2 and BmEnoC were distinct from BmEno1 and other enolases, and were distributed only in lepidopteran clusters. BmEno1 was expressed in all of the tissues used in our study. In contrast, BmEno2 was mainly expressed in the testis with some expression in the ovary and suboesophageal ganglion. BmEnoC was weakly expressed in the testis. Quantitative RT-PCR showed that the mRNA expression of BmEno2 and BmEnoC correlated with testis development; thus, BmEno2 and BmEnoC may be related to lepidopteran-specific spermiogenesis. We identified and characterized three functional enolases from public databases with a combination of dry and wet bench processes in the silkworm B. mori. In addition, we determined that BmEno2 and BmEnoC had species-specific functions. Our strategy could be helpful for the detection of minor genes and functional genes in non-model organisms from public databases.

  13. Vapor etching of nuclear tracks in dielectric materials

    Science.gov (United States)

    Musket, Ronald G.; Porter, John D.; Yoshiyama, James M.; Contolini, Robert J.

    2000-01-01

    A process involving vapor etching of nuclear tracks in dielectric materials for creating high aspect ratio (i.e., length much greater than diameter), isolated cylindrical holes in dielectric materials that have been exposed to high-energy atomic particles. The process includes cleaning the surface of the tracked material and exposing the cleaned surface to a vapor of a suitable etchant. Independent control of the temperatures of the vapor and the tracked materials provide the means to vary separately the etch rates for the latent track region and the non-tracked material. As a rule, the tracked regions etch at a greater rate than the non-tracked regions. In addition, the vapor-etched holes can be enlarged and smoothed by subsequent dipping in a liquid etchant. The 20-1000 nm diameter holes resulting from the vapor etching process can be useful as molds for electroplating nanometer-sized filaments, etching gate cavities for deposition of nano-cones, developing high-aspect ratio holes in trackable resists, and as filters for a variety of molecular-sized particles in virtually any liquid or gas by selecting the dielectric material that is compatible with the liquid or gas of interest.

  14. High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Su Min; Garay, Adrian Adalberto; Lee, Wan In; Chung, Chee Won, E-mail: cwchung@inha.ac.kr

    2015-07-31

    Inductively coupled plasma reactive ion etching (ICPRIE) of Ru thin films patterned with TiN hard masks was investigated using a CH{sub 3}OH/Ar gas mixture. As the CH{sub 3}OH concentration in CH{sub 3}OH/Ar increased, the etch rates of Ru thin films and TiN hard masks decreased. However, the etch selectivity of Ru films on TiN hard masks increased and the etch slope of Ru film improved at 25% CH{sub 3}OH/Ar. With increasing ICP radiofrequency power and direct current bias voltage and decreasing process pressure, the etch rates of Ru films increased, and the etch profiles were enhanced without redeposition on the sidewall. Optical emission spectroscopy and X-ray photoelectron spectroscopy were employed to analyze the plasma and surface chemistry. Based on these results, Ru thin films were oxidized to RuO{sub 2} and RuO{sub 3} compounds that were removed by sputtering of ions and the etching of Ru thin films followed a physical sputtering with the assistance of chemical reaction. - Highlights: • Etching of Ru films in CH{sub 3}OH/Ar was investigated. • High selectivity and etch profile with high degree of anisotropy were obtained. • XPS analysis was examined to identify the etch chemistry. • During etching Ru was oxidized to RuO{sub 2} and RuO{sub 3} can be easily sputtered off.

  15. Solvent content and dentin bond strengths using water-wet, ethanol-wet and deproteinization bonding techniques.

    Science.gov (United States)

    Faria-e-Silva, André Luis; Araújo, José Everton; Rocha, Gilliane Pereira; de Oliveira, Aline da Silva; de Moraes, Rafael Ratto

    2013-01-01

    To evaluate the impact of solvent content in two-step, etch-and-rinse adhesives on the dentin bond strengths obtained via water-wet, ethanol-wet or deproteinization techniques. A model photocurable Bis-GMA/HEMA blend was diluted in ethanol (7.5, 15 or 30 mass%) or acetone (15, 30 or 60 mass%) (low, medium or high solvent content, respectively). Viscosity of the solutions was measured with an oscillatory viscometer and data analyzed using ANOVA on Ranks (5%). Dentin bond strengths were evaluated using microshear bond test. After acid-etching and rinsing, the dentin was kept wet (water-wet), treated with ascending ethanol concentrations (ethanol-wet) or with 10% NaOCl solution (deproteinization). Composite cylinders built-up on the surfaces for the microshear test. Data from each bonding technique were submitted to two-way ANOVA and Fisher's LSD method (5%). Failure modes were classified under magnification and data analyzed using chi-square tests (5%). Viscosity of ethanol-based agents was remarkably higher than acetone solutions. For the water-wet technique, lower bond strength was observed for the low compared with medium and high ethanol contents. For the ethanol-wet technique, the bond strength for both solvents types was low dentin bond strengths for the conventional and ethanol bonding techniques.

  16. A challenge to the conventional wisdom that simultaneous etching and resin infiltration always occurs in self-etch adhesives.

    Science.gov (United States)

    Carvalho, Ricardo M; Chersoni, Stefano; Frankenberger, Roland; Pashley, David H; Prati, Carlo; Tay, Franklin R

    2005-03-01

    This study provided morphological evidence that discrepancies between the depth of demineralisation and the depth of resin infiltration can occur in some mild self-etch adhesives. Sound dentine specimens derived from extracted human third molars were bonded with 5 one-step and 5 two-step self-etch adhesives. One millimeter thick slabs containing the resin-dentine interfaces were immersed in 50 wt% aqueous ammoniacal silver nitrate and processed for TEM examination. A zone of partially etched but uninfiltrated dentine was identified beneath the hybrid layers in the milder versions of both one-step and two-step self-etch adhesives. This zone was characterised by the occurrence of silver deposits along the interfibrillar spaces of mineralised collagen fibrils. The silver infiltrated interfibrillar spaces were clearly identified from the one-step self-etch adhesives Xeno III, iBond, Brush&Bond and the experimental adhesive, and were thinner and only occasionally observed in the two-step self-etch adhesives Clearfil SE Bond and Clearfil Protect Bond. The more aggressive one-step and two-step adhesives that exhibit more abrupt transitions from completely demineralised to mineralised dentin were devoid of these silver-infiltrated interfibrillar spaces beneath the hybrid layers. Incomplete resin infiltration observed in some self-etch adhesives may be caused by the reduced etching potential of the acidic monomers toward the base of hybrid layers, or the presence of acidic but non-polymerisable hydrolytic adhesive components, creating potential sites for the degradation of the bonded created by these self-etch adhesives.

  17. Appearance and overall acceptability of fresh-cut cantaloupe pieces from whole melon treated with wet steam process

    Science.gov (United States)

    Minimally processed fresh-cut fruits have a limited shelf-life because of deterioration caused by spoilage microflora and changes in physiological processes. Whole melons were inoculated with 7 log CFU/ml of each bacterium (Salmonella, Escherichia coli O157:H7 and Listeria monocytogenes) and then t...

  18. Spatial variation of the etch rate for deep etching of silicon by reactive ion etching

    DEFF Research Database (Denmark)

    Andersen, Bo Asp Møller; Hansen, Ole; Kristensen, Martin

    1997-01-01

    . It was found that, for a constant load of silicon exposed to the plasma, the etch rate variation can be controlled through the applied rf power, the chamber pressure, and the gas mixture. It was also found that the etch rate uniformity varies with the load of silicon exposed to the plasma. The result...... is a balance between the flux of neutral radicals and the flux of energetic ions to the surface. This balance is due to the RIE etch mechanism, which involves synergism between the two fluxes. (C) 1997 American Vacuum Society....

  19. ChISELS 1.0: theory and user manual :a theoretical modeler of deposition and etch processes in microsystems fabrication.

    Energy Technology Data Exchange (ETDEWEB)

    Plimpton, Steven James; Schmidt, Rodney Cannon; Ho, Pauline; Musson, Lawrence Cale

    2006-09-01

    Chemically Induced Surface Evolution with Level-Sets--ChISELS--is a parallel code for modeling 2D and 3D material depositions and etches at feature scales on patterned wafers at low pressures. Designed for efficient use on a variety of computer architectures ranging from single-processor workstations to advanced massively parallel computers running MPI, ChISELS is a platform on which to build and improve upon previous feature-scale modeling tools while taking advantage of the most recent advances in load balancing and scalable solution algorithms. Evolving interfaces are represented using the level-set method and the evolution equations time integrated using a Semi-Lagrangian approach [1]. The computational meshes used are quad-trees (2D) and oct-trees (3D), constructed such that grid refinement is localized to regions near the surface interfaces. As the interface evolves, the mesh is dynamically reconstructed as needed for the grid to remain fine only around the interface. For parallel computation, a domain decomposition scheme with dynamic load balancing is used to distribute the computational work across processors. A ballistic transport model is employed to solve for the fluxes incident on each of the surface elements. Surface chemistry is computed by either coupling to the CHEMKIN software [2] or by providing user defined subroutines. This report describes the theoretical underpinnings, methods, and practical use instruction of the ChISELS 1.0 computer code.

  20. Continuous wet-process growth of ZnO nanoarrays for wire-shaped photoanode of dye-sensitized solar cell.

    Science.gov (United States)

    Tao, Pan; Guo, Wanwan; Du, Jun; Tao, Changyuan; Qing, Shenglan; Fan, Xing

    2016-09-15

    Well-aligned ZnO nanorod arrays have been grown on metal-plated polymer fiber via a mild wet process in a newly-designed continuous reactor, aiming to provide wire-shaped photoanodes for wearable dye-sensitized solar cells. The growth conditions were systematically optimized with the help of computational flow-field simulation. The flow field in the reactor will not only affect the morphology of the ZnO nanorod⧹nanowire but also affect the pattern distribution of nanoarray on the electrode surface. Unlike the sectional structure from the traditional batch-type reactor, ZnO nanorods with finely-controlled length and uniform morphology could be grown from the continuous reactor. After optimization, the wire-shaped ZnO-type photoanode grown from the continuous reactor exhibited better photovoltaic performance than that from the traditional batch-type reactor. Copyright © 2016 Elsevier Inc. All rights reserved.

  1. Improvement of polycrystalline silicon wafer solar cell efficiency by forming nanoscale pyramids on wafer surface using a self-mask etching technique.

    Science.gov (United States)

    Lin, Hsin-Han; Chen, Wen-Hwa; Hong, Franklin C-N

    2013-05-01

    The creation of nanostructures on polycrystalline silicon wafer surface to reduce the solar reflection can enhance the solar absorption and thus increase the solar-electricity conversion efficiency of solar cells. The self-masking reactive ion etching (RIE) was studied to directly fabricate nanostructures on silicon surface without using a masking process for antireflection purpose. Reactive gases comprising chlorine (Cl2), sulfur hexafluoride (SF6), and oxygen (O2) were activated by radio-frequency plasma in an RIE system at a typical pressure of 120-130 mTorr to fabricate the nanoscale pyramids. Poly-Si wafers were etched directly without masking for 6-10 min to create surface nanostructures by varying the compositions of SF6, Cl2, and O2 gas mixtures in the etching process. The wafers were then treated with acid (KOH:H2O = 1:1) for 1 min to remove the damage layer (100 nm) induced by dry etching. The damage layer significantly reduced the solar cell efficiencies by affecting the electrical properties of the surface layer. The light reflectivity from the surface after acid treatment could be significantly reduced to <10% for the wavelengths between 500 and 900 nm. The effects of RIE and surface treatment conditions on the surface nanostructures and the optical performance as well as the efficiencies of solar cells will be presented and discussed. The authors have successfully fabricated large-area (156 × 156 mm2) subwavelength antireflection structure on poly-Si substrates, which could improve the solar cell efficiency reproducibly up to 16.27%, higher than 15.56% using wet etching.

  2. Model-based analysis of high shear wet granulation from batch to continuous processes in pharmaceutical production--a critical review.

    Science.gov (United States)

    Kumar, Ashish; Gernaey, Krist V; De Beer, Thomas; Nopens, Ingmar

    2013-11-01

    The manufacturing of pharmaceutical dosage forms, which has traditionally been a batch-wise process, is now also transformed into a series of continuous operations. Some operations such as tabletting and milling are already performed in continuous mode, while the adaptation towards a complete continuous production line is still hampered by complex steps such as granulation and drying which are considered to be too inflexible to handle potential product change-overs. Granulation is necessary in order to achieve good flowability properties and better control of drug content uniformity. This paper reviews modelling and supporting measurement tools for the high shear wet granulation (HSWG) process, which is an important granulation technique due to the inherent benefits and the suitability of this unit operation for the desired switch to continuous mode. For gaining improved insight into the complete system, particle-level mechanisms are required to be better understood, and linked with an appropriate meso- or macro-scale model. A brief review has been provided to understand the mechanisms of the granulation process at micro- or particle-level such as those involving wetting and nucleation, aggregation, breakage and consolidation. Further, population balance modelling (PBM) and the discrete element method (DEM), which are the current state-of-the-art methods for granulation modelling at micro- to meso-scale, are discussed. The DEM approach has a major role to play in future research as it bridges the gap between micro- and meso-scales. Furthermore, interesting developments in the measurement technologies are discussed with a focus towards inline measurements of the granulation process to obtain experimental data which are required for developing good models. Based on the current state of the developments, the review focuses on the twin-screw granulator as a device for continuous HSWG and attempts to critically evaluate the current process. As a result, a set of open

  3. Novel single-cell mega-size chambers for electrochemical etching of panorama position-sensitive polycarbonate ion image detectors

    Science.gov (United States)

    Sohrabi, Mehdi

    2017-11-01

    A novel development is made here by inventing panorama single-cell mega-size electrochemical etching (MS-ECE) chamber systems for processing panorama position-sensitive mega-size polycarbonate ion image detectors (MS-PCIDs) of potential for many neutron and ion detection applications in particular hydrogen ions or proton tracks and images detected for the first time in polycarbonates in this study. The MS-PCID is simply a large polycarbonate sheet of a desired size. The single-cell MS-ECE invented consists of two large equally sized transparent Plexiglas sheets as chamber walls holding a MS-PCID and the ECE chamber components tightly together. One wall has a large flat stainless steel electrode (dry cell) attached to it which is directly in contact with the MS-PCID and the other wall has a rod electrode with two holes to facilitate feeding and draining out the etching solution from the wet cell. A silicon rubber washer plays the role of the wet cell to hold the etchant and the electrical insulator to isolate the dry cell from the wet cell. A simple 50 Hz-HV home-made generator provides an adequate field strength through the two electrodes across the MS-ECE chamber. Two panorama single-cell MS-ECE chamber systems (circular and rectangular shapes) constructed were efficiently applied to processing the MS-PCIDs for 4π ion emission image detection of different gases in particular hydrogen ions or protons in a 3.5 kJ plasma focus device (PFD as uniquely observed by the unaided eyes). The panorama MS-PCID/MS-ECE image detection systems invented are novel with high potential for many applications in particular as applied to 4π panorama ion emission angular distribution image detection studies in PFD space, some results of which are presented and discussed.

  4. Evapotranspiration and land surface process responses to afforestation in western Taiwan: A comparison between dry and wet weather conditions

    Science.gov (United States)

    Yongqiang Liu; L.B. Zhang; L. Hao; Ge Sun; S.-C. Liu

    2016-01-01

    An afforestation project was initiated in the western plain of Taiwan to convert abandoned farming lands into forests to improve the ecological and environmental conditions. This study was conducted to understand the potential impacts of this land cover change on evapotranspiration (ET) and other land surface processes and the...

  5. Hierarchical micro-nano structured Ti6Al4V surface topography via two-step etching process for enhanced hydrophilicity and osteoblastic responses.

    Science.gov (United States)

    Moon, Byeong-Seok; Kim, Sungwon; Kim, Hyoun-Ee; Jang, Tae-Sik

    2017-04-01

    Hierarchical micro-nano (HMN) surface structuring of dental implants is a fascinating strategy for achieving fast and mechanically stable fixation due to the synergetic effect of micro- and nano-scale surface roughness with surrounding tissues. However, the introduction of a well-defined nanostructure on a microstructure having complex surface geometry is still challenging. As a means of fabricating HMN surface on Ti6Al4V-ELI, target-ion induced plasma sputtering (TIPS) was used onto a sand-blasted, large-grit and acid-etched substrate. The HMN surface topography was simply controlled by adjusting the tantalum (Ta) target power of the TIPS technique, which is directly related to the Ta ion flux and the surface chemical composition of the substrate. Characterization using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and laser scanning microscopy (LSM) verified that well-defined nano-patterned surface structures with a depth of ~300 to 400nm and a width of ~60 to 70nm were uniformly distributed and followed the complex micron-sized surface geometry. In vitro cellular responses of pre-osteoblast cells (MC3T3-E1) were assessed by attachment and proliferation of cells on flat, nano-roughened, micro-roughened, and an HMN surface structure of Ti6Al4V-ELI. Moreover, an in vivo dog mandible defect model study was used to investigate the biological effect of the HMN surface structure compared with the micro-roughened surface. The results showed that the surface nanostructure significantly increased the cellular activities of flat and micro-roughened Ti, and the bone-to-implant contact area and new bone volume were significantly improved on the HMN surface structured Ti. These results support the idea that an HMN surface structure on Ti6Al4V-ELI alloy has great potential for enhancing the biological performance of dental implants. Copyright © 2016 Elsevier B.V. All rights reserved.

  6. Modeled Wet Nitrate Deposition

    Data.gov (United States)

    U.S. Environmental Protection Agency — Modeled data on nitrate wet deposition was obtained from Dr. Jeff Grimm at Penn State Univ. Nitrate wet depostion causes acidification and eutrophication of surface...

  7. Refinement and carbon incorporation effects on the superconducting properties of MgB{sub 2} through wet milling process of low purity boron powder

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Byung-Hyuk, E-mail: bhjun@kaeri.re.kr [Neutron Science Division, Korea Atomic Energy Research Institute (KAERI), Daejeon 305-353 (Korea, Republic of); Park, Soon-Dong; Kim, Chan-Joong [Neutron Science Division, Korea Atomic Energy Research Institute (KAERI), Daejeon 305-353 (Korea, Republic of)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Wet milling effects of B powder on the superconducting properties were investigated. Black-Right-Pointing-Pointer The C substitution for the B site in MgB{sub 2} occurred due to a toluene medium. Black-Right-Pointing-Pointer A shift of MgB{sub 2} peaks in XRD and a variation of J{sub c}-B slopes proved C incorporation. Black-Right-Pointing-Pointer The B particle size reduction could induce a small grain size in the MgB{sub 2} formation. Black-Right-Pointing-Pointer J{sub c} and H{sub c2} were enhanced by increased grain boundary pinning and lattice disorder. - Abstract: The wet milling effects of boron (B) powder on the full width at half maximum (FWHM) value of X-ray reflexes, grain size, carbon (C) substitution, critical temperature (T{sub c}), critical current density (J{sub c}), irreversibility field (H{sub irr}), and upper critical field (H{sub c2}) have been investigated for MgB{sub 2} bulk superconductors. The semi-crystalline B powder with a low purity of 95-97% was refined with different milling times of 1 to 15 h using a toluene medium. As a result of B powder milling, the particle size of the B powder decreased and the semi-crystalline phase became an amorphous phase. As the milling time increased, T{sub c} of MgB{sub 2} bulk decreased by the deterioration of the crystallinity and J{sub c} increased over the applied magnetic fields. With the refinement of the B powder, the grain boundary pinning increased due to smaller MgB{sub 2} grain size. In addition, it was found that a C substitution for the B site occurred from a toluene medium during wet milling process. The increased electron scattering due to an increase of the defects like grain boundary and lattice disorder by C substitution led to enhance the superconducting properties with an increase of the FWHM value of the MgB{sub 2} peaks and a decrease of the T{sub c}. The MgB{sub 2} prepared from B powder mechanically milled for 7 h showed the highest magnetic

  8. A novel approach to realize SANI process in freshwater sewage treatment--Use of wet flue gas desulfurization waste streams as sulfur source.

    Science.gov (United States)

    Jiang, Feng; Zhang, Liang; Peng, Guo-Liang; Liang, Si-Yun; Qian, Jin; Wei, Li; Chen, Guang-Hao

    2013-10-01

    SANI (Sulfate reduction, Autotrophic denitrification and Nitrification Integrated) process has been approved to be a sludge-minimized sewage treatment process in warm and coastal cities with seawater supply. In order to apply this sulfur-based process in inland cold areas, wet flue gas desulfurization (FGD) can be simplified and integrated with SANI process, to provide sulfite as electron carrier for sulfur cycle in sewage treatment. In this study, a lab-scale system of the proposed novel process was developed and run for over 200 days while temperature varied between 30 and 5 °C, fed with synthetic FGD wastewaters and sewage. The sulfite-reducing upflow anaerobic sludge bed (SrUASB) reactor, as the major bioreactor of the system, removed 86.9% of organics while the whole system removed 94% of organics even when water temperature decreased to around 10 °C. The bactericidal effect of sulfite was not observed in the SrUASB reactor, while thiosulfate was found accumulated under psychrophilic conditions. The sludge yield of the SrUASB reactor was determined to be 0.095 kg VSS/kg COD, higher than of sulfate reduction process but still much lower than of conventional activated sludge processes. The dominant microbes in the SrUASB reactor were determined as Lactococcus spp. rather than sulfate-reducing bacteria, but sulfite reduction still contributed 85.5% to the organic carbon mineralization in this reactor. Ammonia and nitrate were effectively removed in the aerobic and anoxic filters, respectively. This study confirms the proposed process was promising to achieve sludge-minimized sewage treatment integrating with flue gas desulfurization in inland and cold areas. Copyright © 2013 Elsevier Ltd. All rights reserved.

  9. A review of SiC reactive ion etching in fluorinated plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Yih, P.H. [Bell Labs., Orlando, FL (United States). Lucent Technologies; Saxena, V.; Steckl, A.J. [Cincinnati Univ., OH (United States). Dept. of Electrical and Computer Engineering

    1997-07-01

    Research and development in semiconducting silicon carbide (SiC) technology has produced significant progress in the past five years in many areas: material (bulk and thin film) growth, device fabrication, and applications. A major factor in this rapid growth has been the development of SiC bulk crystals and the availability of crystalline substrates. Current leading applications for SiC devices include high power and high temperature devices and light emitting diodes. Due to the strong bonding between Si and C (Si-C = 1.34 x Si-Si), wet chemical etching can only be performed at high temperature. Therefore, plasma-based (``dry``) etching plays the crucial role of patterning SiC for the fabrication of various electronic devices. In the past several years, reactive ion etching (RIE) of SiC polytypes (3C and 6H) has been investigated in fluorinated gases (primarily CHF{sub 3}, CBrF{sub 3}, CF{sub 4}, SF{sub 6}, and NF{sub 3}), usually mixed with oxygen and occasionally with other additives or in a mixture of fluorinated gases. In this paper, a review of SiC RIE is presented. The primary emphasis is on etching of the 3C and 6H polytypes, but some results on RIE of the 4H polytype are included. The paper covers the basic etching mechanisms, provides typical etching properties in selected plasma conditions, discusses the effects of changes in various etching parameters, such as plasma pressure, density and power, etching time, etc. The etching of features of sizes varying from sub-{mu}m to tens of {mu}m`s is addressed. Finally, optimum etching conditions and trade-offs are considered for various device configurations. (orig.) 122 refs.

  10. A Review of SiC Reactive Ion Etching in Fluorinated Plasmas

    Science.gov (United States)

    Yih, P. H.; Saxena, V.; Steckl, A. J.

    1997-07-01

    Research and development in semiconducting silicon carbide (SiC) technology has produced significant progress in the past five years in many areas: material (bulk and thin film) growth, device fabrication, and applications. A major factor in this rapid growth has been the development of SiC bulk crystals and the availability of crystalline substrates. Current leading applications for SiC devices include high power and high temperature devices and light emitting diodes. Due to the strong bonding between Si and C (Si-C = 1.34×Si-Si), wet chemical etching can only be performed at high temperature. Therefore, plasma-based (dry) etching plays the crucial role of patterning SiC for the fabrication of various electronic devices. In the past several years, reactive ion etching (RIE) of SiC polytypes (3C and 6H) has been investigated in fluorinated gases (primarily CHF3, CBrF3, CF4, SF6, and NF3), usually mixed with oxygen and occasionally with other additives or in a mixture of fluorinated gases. In this paper, a review of SiC RIE is presented. The primary emphasis is on etching of the 3C and 6H polytypes, but some results on RIE of the 4H polytype are included. The paper covers the basic etching mechanisms, provides typical etching properties in selected plasma conditions, discusses the effects of changes in various etching parameters, such as plasma pressure, density and power, etching time, etc. The etching of features of sizes varying from sub-m to tens of μm's is addressed. Finally, optimum etching conditions and trade-offs are considered for various device configurations.

  11. Dry Etching Characteristics of MOVPE-Grown CdTe Epilayers in CH4, H2, Ar ECR Plasmas

    Science.gov (United States)

    Yasuda, K.; Niraula, M.; Araki, N.; Miyata, M.; Kitagawa, S.; Kojima, M.; Ozawa, J.; Tsubota, S.; Yamaguchi, T.; Agata, Y.

    2017-09-01

    Dry etching characteristics of single crystal (100) CdTe epitaxial layers grown on GaAs substrates were studied using CH4, H2, and Ar as process gases in an electron cyclotron resonance plasma. A smooth and anisotropic etching was obtained with CH4, H2, and Ar. No hydrocarbon polymer was found on the etched surface, which was confirmed by x-ray photoelectron spectroscopy measurement. Etching of the CdTe surface was also possible with H2 and Ar; however, no etching was observed in the absence of H2. Dependence of the etch rate on plasma gas composition and flow rates was studied. Mechanisms of etching with and without CH4 supply were also studied. Etched CdTe layers also showed no deterioration of electrical properties, which was confirmed by photoluminescence measurement at 4.2 K and Hall measurement at 300 K.

  12. Modelagem dos processos químicos em plasmas de misturas gasosas usadas na corrosão de silício. Parte 1: CF4 / O2 Modeling of the chemical processes in the plasma of gaseous mixtures used in the etching of silicon. Part 1: CF4/O2

    Directory of Open Access Journals (Sweden)

    G. F. Bauerfeldt

    1998-02-01

    Full Text Available The plasma etching of semiconductor surfaces with fluorine-containing compounds has technological interest. Presently, considerable effort is being devoted to understand the chemistry involved. In this work, a numerical modeling analysis of the gas-phase decomposition of CF4/O2 mixtures, in the presence of silicon, was performed. The relative importance of individual processes was determined as well as the effect of the parameters' uncertainties. The results were compared with experimental data. The main etching agent in the system is the fluorine atom. The concentration of the main species, SiF4, CO, CO2 and COF2 depend on the composition of the mixture.

  13. Model-based analysis of high shear wet granulation from batch to continuous processes in pharmaceutical production - A critical review

    DEFF Research Database (Denmark)

    Kumar, Ashish; Gernaey, Krist; De Beer, Thomas

    2013-01-01

    The manufacturing of pharmaceutical dosage forms, which has traditionally been a batch-wise process, is now also transformed into a series of continuous operations. Some operations such as tabletting and milling are already performed in continuous mode, while the adaptation towards a complete...... continuous production line is still hampered by complex steps such as granulation and drying which are considered to be too inflexible to handle potential product change-overs. Granulation is necessary in order to achieve good flowability properties and better control of drug content uniformity. This paper...

  14. Understanding the formation process of the liquid slug in a hilly-terrain wet natural gas pipeline

    DEFF Research Database (Denmark)

    Yang, Yan; Li, Jingbo; Wang, Shuli

    2017-01-01

    condition on the liquid slug formation is discussed including pipe diameter, inclination angle, gas superficial velocity and liquid holdup. The results show that the pipe is blocked by the liquid slug at the moment of slug formed. The pipe pressure suddenly increases, and then decreases gradually...... in the process of liquid slug formation and motion. The pipe pressure drop and liquid holdup decrease along with the increasing inclination angle of ascending pipe. On the contrary, they rise with the increase of the inclination angle of descending pipe. Higher gas superficial velocity and liquid holdup result...

  15. Upgrading of High-Aluminum Hematite-Limonite Ore by High Temperature Reduction-Wet Magnetic Separation Process

    Directory of Open Access Journals (Sweden)

    Xianlin Zhou

    2016-03-01

    Full Text Available The huge consumption of iron ores in China has attracted much attention to utilizing low grade complex iron resources, such as high-aluminum hematite-limonite ore, which is a refractory resource and difficult to upgrade by traditional physical concentration processes due to the superfine size and close dissemination of iron minerals with gangue minerals. An innovative technology for a high temperature reduction-magnetic separation process was studied to upgrade a high-aluminum iron ore assaying 41.92% Fetotal, 13.74% Al2O3 and 13.96% SiO2. The optimized results show that the final metal iron powder, assaying 90.46% Fetotal, was manufactured at an overall iron recovery of 90.25% under conditions as follows: balling the high aluminum iron ore with 15% coal blended and at 0.3 basicity, reducing the dried pellets at 1350 °C for 25 min with a total C/Fe mass ratio of 1.0, grinding the reduced pellets up to 95%, passing at 0.074 mm and magnetically separating the ground product in a Davis Tube at a 0.10-T magnetic field intensity. The metal iron powder can be used as the burden for an electric arc furnace (EAF. Meanwhile, the nonmagnetic tailing is suitable to produce ceramic, which mainly consists of anorthite and corundum. An efficient way has been found to utilize high-aluminum iron resources.

  16. Is Validation of Indigenous Ecological Knowledge a Disrespectful Process? A Case Study of Traditional Fishing Poisons and Invasive Fish Management from the Wet Tropics, Australia

    Directory of Open Access Journals (Sweden)

    Monica Gratani

    2011-09-01

    Full Text Available Despite the growing recognition of the contribution that indigenous ecological knowledge (IEK can make to contemporary 'western' science-based natural resource management (NRM, integration of the two knowledge systems has not reached its full potential in Australia. One explanation is that there is an implicit requirement for IEK to be validated by western scientific knowledge (SK, which has stalled its application and perpetuated the primacy of SK over IEK. Consequently, there is little experience of IEK validation, indigenous peoples' perspectives of the process, and no formal frameworks to achieve mutual and equitable validation of both IEK and SK. In this paper we assess the opportunities and limitations of validation processes using a case study of traditional fishing poisons for invasive fish management in the Wet Tropics World Heritage Area of Australia. The study was conducted within a coresearch approach between the Aboriginal holders of the IEK, who are among the paper's authors, and science-based biologists. We jointly carried out scientific laboratory trials that demonstrated that fishing poisons are effective at immobilizing invasive tilapia. Retrospective interviews with indigenous coresearchers showed that they did not find the experience of validation disrespectful, but instead empowering and necessary for their IEK to be understood and appreciated by scientists and included in NRM. Based on our experiences and knowledge of socialization theory we present a framework for the potential future design of collaborative validation processes to facilitate the integration of IEK into mainstream NRM, and the acceptance of SK within indigenous communities in Australia.

  17. Effect of Heat Drawing Process on Mechanical Properties of Dry-Jet Wet Spun Fiber of Linear Low Density Polyethylene/Carbon Nanotube Composites

    Directory of Open Access Journals (Sweden)

    Jong Won Kim

    2017-01-01

    Full Text Available Polyethylene is one of the most commonly used polymer materials. Even though linear low density polyethylene (LLDPE has better mechanical properties than other kinds of polyethylene, it is not used as a textile material because of its plastic behavior that is easy to break at the die during melt spinning. In this study, LLDPE fibers were successfully produced with a new approach using a dry-jet wet spinning and a heat drawing process. The fibers were filled with carbon nanotubes (CNTs to improve the strength and reduce plastic deformation. The crystallinity, degree of orientation, mechanical properties (strength to yield, strength to break, elongation at break, and initial modulus, electrical conductivity, and thermal properties of LLDPE fibers were studied. The results show that the addition of CNTs improved the tensile strength and the degree of crystallinity. The heat drawing process resulted in a significant increase in the tensile strength and the orientation of the CNTs and polymer chains. In addition, this study demonstrates that the heat drawing process effectively decreases the plastic deformation of LLDPE.

  18. Surface structure determines dynamic wetting

    Science.gov (United States)

    Shiomi, Junichiro; Wang, Jiayu; Do-Quang, Minh; Cannon, James; Yue, Feng; Suzuki, Yuji; Amberg, Gustav

    2014-11-01

    Dynamic wetting, the spontaneous spreading process after droplet contacts a solid surface, is important in various engineering processes, such as in printing, coating, and lubrication. In the recent years, experiments and numerical simulations have greatly progressed the understanding in the dynamic wetting particularly on ``flat'' substrates. To gain further insight into the governing physics of the dynamic wetting, we perform droplet-wetting experiments on microstructured surfaces, just a few micrometers in size, with complementary numerical simulations, and investigate the dependence of the spreading rate on the microstructure geometries and fluid properties. We reveal that the influence of microstructures can be quantified in terms of a line friction coefficient for the energy dissipation rate at the contact line, and that this can be described in a simple formula in terms of the geometrical parameters of the roughness and the line-friction coefficient of the planar surface. The systematic study is also of practical importance since structures and roughness are omnipresent and their influence on spreading rate would give us additional degrees of freedom to control the dynamic wetting. This work was financially supported in part by, the Japan Society for the Promotion of Science (J.W., J.C., and J.S) and Swedish Governmental Agency for Innovation Systems (M.D.-Q. and G.A.).

  19. Investigation on the relationship between the fine particle emission and crystallization characteristics of gypsum during wet flue gas desulfurization process.

    Science.gov (United States)

    Pan, Danping; Wu, Hao; Yang, Linjun

    2017-05-01

    The relationship between the fine particles emitted after desulfurization and gypsum crystals in the desulfurization slurry was investigated, and the crystallization characteristics varying with the operation parameters and compositions of the desulfurization slurry were discussed. The results showed that the fine particles generated during the desulfurization process were closely related to the crystal characteristics in the desulfurization slurry by comparison of their morphology and elements. With the higher proportion of fine crystals in the desulfurization slurry, the number concentration of fine particles after desulfurization was increased and their particle sizes were smaller, indicating that the optimization of gypsum crystallization was beneficial for the reduction of the fine particle emission. The lower pH value and an optimal temperature of the desulfurization slurry were beneficial to restrain the generation of fine crystals in the desulfurization slurry. In addition, the higher concentrations of the Fe(3+) ions and the F(-) ions in the desulfurization slurry both promoted the generation of fine crystals with corresponding change of the morphology and the effect of the Fe(3+) ions was more obvious. With the application of the desulfurization synergist additive, it was beneficial for the inhibition of fine crystals while the thinner crystals were generated. Copyright © 2016. Published by Elsevier B.V.

  20. Strain-accelerated HF etching of AlAs for epitaxial lift-off

    NARCIS (Netherlands)

    Voncken, M.M.J.; Schermer, J.J.; Bauhuis, G.J.; Niftrik, A.T.J. van; Larsen, P.K.

    2004-01-01

    Epitaxial lift-off (ELO) is a process which allows for the separation of a single crystalline III/V thin film or device from the substrate it was deposited on. This process is based on the selective etching of an intermediate AlAs release layer in an aqueous HF solution. The lateral etch rate of the

  1. Morphological/chemical imaging of demineralized dentin layer in its natural, wet state.

    Science.gov (United States)

    Wang, Yong; Yao, Xiaomei

    2010-05-01

    Measuring the structure, composition or suitability for bonding of the acid-etched dentin substrate, especially in its hydrated state, has been a formidable problem. The purpose of this study was to determine the morphological and structural profiles of the dentin demineralized layer measured in its natural wet state using environmental scanning electron microscopy (ESEM) and micro-Raman imaging. The occlusal 1/3 of the crown was removed from nine extracted, unerupted human third molars. Dentin surfaces were abraded with 600-grit SiC sandpaper under water to create smear layers. The prepared dentin surfaces were randomly selected for treatment with the self-etching agent (Adper Prompt L-Pop) or the total-etching agent 35% H(3)PO(4) gel (with/without agitation). Micro-Raman spectra and imaging were acquired at 1-1.5microm spatial resolution at positions perpendicular to the treated surfaces; since this technique is non-destructive, the same specimens were also imaged with ESEM. Specimens were kept wet throughout spectral acquisition and ESEM observations. ESEM could be used to reveal demineralized layers in acid-etched dentin, but the resolution was low and no collagen fibrils were disclosed. The detailed chemical maps/profiles of demineralized dentin layers under wet conditions could be obtained using Raman imaging. It was shown that the mineral existed in the superficial layer of all etched dentin covered with smear layers. The mineral was much easier to be removed underneath the superficial layer. The depth, degree, and profile of dentin demineralization were dependent on the types of acids (self-etching vs. total etching) and application procedures (with vs. without agitation). Most current adhesives are applied using wet bonding techniques in which the dentin is kept fully hydrated throughout the bonding. Our ability to fully characterize the hydrated, etched dentin substrates is very important for understanding bonding under in vivo conditions. 2010 Academy of

  2. A controlled wet-spinning and dip-coating process for preparation of high-permeable TiO2 hollow fiber membranes.

    Science.gov (United States)

    Zhang, Qi; Wang, Hua; Fan, Xinfei; Chen, Shuo; Yu, Hongtao; Quan, Xie

    2016-01-01

    In order to improve the permeate flux of photocatalytic membranes, we present an approach for coupling TiO2 with ceramic hollow fiber membranes. The ceramic hollow fiber membranes with high permeate flux were fabricated by a controlled wet-spinning process using polyethersulfone (PESf) and ceramic powder as precursors and 1-methyl-2-pyrrolidinone as solvent, and the subsequent TiO2 coating was performed by a dip-coating process using tetra-n-butyl titanate as precursor. It has been found that the PESf/ceramic powder ratio could influence the structure of the membranes. Here the as-prepared TiO2 hollow fiber membranes had a pure water flux of 4,450 L/(m(2)·h). The performance of the TiO2 hollow fiber membrane was evaluated using humic acid (HA) as a test substance. The results demonstrated that this membrane exhibited a higher permeate flux under UV irradiation than in the dark and the HA removal efficiency was enhanced. The approach described here provides an operable route to the development of high-permeable photocatalytic membranes for water treatment.

  3. Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing

    Science.gov (United States)

    Shinoda, K.; Miyoshi, N.; Kobayashi, H.; Miura, M.; Kurihara, M.; Maeda, K.; Negishi, N.; Sonoda, Y.; Tanaka, M.; Yasui, N.; Izawa, M.; Ishii, Y.; Okuma, K.; Saldana, T.; Manos, J.; Ishikawa, K.; Hori, M.

    2017-05-01

    The demand for precisely controlled etching is increasing as semiconductor device geometries continue to shrink. To fulfill this demand, cyclic atomic level/layer etching will become one of the key technologies in semiconductor device manufacturing at nanometer dimensions. This review describes recent trends in semiconductor devices and some of the latest results on cyclic atomic-level etching. In particular, it focuses on two types of cyclic etching that use different heating procedures: infrared irradiation for isotropic etching and Ar+ ion bombardment for anisotropic etching. It describes how an inductively-coupled-plasma down-flow etching apparatus with infrared lamps can be used for isotropic cyclic etching. The isotropic cyclic etching of SiN involves the formation and thermal desorption of ammonium hexafluorosilicate-based surface modified layers. This method features high selectivity with respect to SiO2, atomic-level control of the amount of SiN etching, and isotropic etched features. On the other hand, the anisotropic cyclic etching with Ar+ ion bombardment uses a microwave electron-cyclotron-resonance plasma etching apparatus. The anisotropic process for poly Si is composed of cyclic repetitions of chlorine adsorption and Ar+ ion bombardment. The anisotropic process for SiN is composed of cyclic repetitions involving an adsorption step using hydrofluorocarbon chemistry and a desorption step using Ar+ ion bombardment. Potential applications of these isotropic/anisotropic cyclic etching processes are described.

  4. Formation of aligned silicon nanowire on silicon by electroless etching in HF solution

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, N.; Douani, R. [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Hadjersi, T., E-mail: hadjersi@yahoo.co [Unite de Developpement de la Technologie du Silicium (UDTS), 2, Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Boukherroub, R. [Institut de Recherche Interdisciplinaire (IRI, FRE 2963), Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France)

    2009-12-15

    It was demonstrated that the etching in HF-based aqueous solution containing AgNO{sub 3} and Na{sub 2}S{sub 2}O{sub 8} as oxidizing agents or by Au-assisted electroless etching in HF/H{sub 2}O{sub 2} solution at 50 deg. C yields films composed of aligned Si nanowire (SiNW). SiNW of diameters {approx}10 nm were formed. The morphology and the photoluminescence (PL) of the etched layer as a function of etching solution composition were studied. The SiNW layers formed on silicon were investigated by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and photoluminescence. It was demonstrated that the morphology and the photoluminescence of the etched layers strongly depends on the type of etching solution. Finally, a discussion on the formation process of the silicon nanowires is presented.

  5. Processing challenges for GaN-based photonic and electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Ren, F. [Bell Labs., Murray Hill, NJ (United States); Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States)] [and others

    1997-09-01

    The wide gap materials SiC, GaN and to a lesser extent diamond are attracting great interest for high power/high temperature electronics. There are a host of device processing challenges presented by these materials because of their physical and chemical stability, including difficulty in achieving stable, low contact resistances, especially for one conductivity type, absence of convenient wet etch recipes, generally slow dry etch rates, the high temperatures needed for implant activation, control of suitable gate dielectrics and the lack of cheap, large diameter conducting and semi-insulating substrates. The relatively deep ionization levels of some of the common dopants (Mg in GaN; B, Al in SiC; P in diamond) means that carrier densities may be low at room temperature, and thus contact resistances will be greatly improved provided the metallization is stable and reliable. Some recent work with CoSi{sub x} on SiC and W-alloys on GaN show promise for improved ohmic contacts. The issue of unintentional hydrogen passivation of dopants will also be covered - this leads to strong increases in resistivity of p-SiC and GaN, but to large decreases in resistivity of diamond. Recent work on development of wet etches has found recipes for AlN (KOH), while photochemical etching of SiC and GaN has been reported. In the latter cases p-type materials is not etched, which can be a major liability in some devices. The dry etch results obtained with various novel reactors, including ICP, ECR and LE4 will be compared - the high ion densities in the former techniques produce the highest etch rates for strongly-bonded materials, but can lead to preferential loss of N from the nitrides and therefore to a highly conducting surface. This is potentially a major problem for fabrication of dry etched, recessed gate FET structures.

  6. Numerical and experimental studies of the carbon etching in EUV-induced plasma

    CERN Document Server

    Astakhov, D I; Lee, C J; Ivanov, V V; Krivtsun, V M; Yakushev, O; Koshelev, K N; Lopaev, D V; Bijkerk, F

    2015-01-01

    We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced plasma during and after the EUV pulse to obtain the energy resolved ion fluxes from the plasma to the surface. By relating the computed ion fluxes to the experimentally observed etching rate at various pressures and ion energies, we show that at low pressure and energy, carbon etching is due to chemical sputtering, while at high pressure and energy a reactive ion etching process is likely to dominate.

  7. Modified TMAH based etchant for improved etching characteristics on Si{1 0 0} wafer

    Science.gov (United States)

    Swarnalatha, V.; Narasimha Rao, A. V.; Ashok, A.; Singh, S. S.; Pal, P.

    2017-08-01

    Wet bulk micromachining is a popular technique for the fabrication of microstructures in research labs as well as in industry. However, increasing the throughput still remains an active area of research, and can be done by increasing the etching rate. Moreover, the release time of a freestanding structure can be reduced if the undercutting rate at convex corners can be improved. In this paper, we investigate a non-conventional etchant in the form of NH2OH added in 5 wt% tetramethylammonium hydroxide (TMAH) to determine its etching characteristics. Our analysis is focused on a Si{1 0 0} wafer as this is the most widely used in the fabrication of planer devices (e.g. complementary metal oxide semiconductors) and microelectromechanical systems (e.g. inertial sensors). We perform a systematic and parametric analysis with concentrations of NH2OH varying from 5% to 20% in step of 5%, all in 5 wt% TMAH, to obtain the optimum concentration for achieving improved etching characteristics including higher etch rate, undercutting at convex corners, and smooth etched surface morphology. Average surface roughness (R a), etch depth, and undercutting length are measured using a 3D scanning laser microscope. Surface morphology of the etched Si{1 0 0} surface is examined using a scanning electron microscope. Our investigation has revealed a two-fold increment in the etch rate of a {1 0 0} surface with the addition of NH2OH in the TMAH solution. Additionally, the incorporation of NH2OH significantly improves the etched surface morphology and the undercutting at convex corners, which is highly desirable for the quick release of microstructures from the substrate. The results presented in this paper are extremely useful for engineering applications and will open a new direction of research for scientists in both academic and industrial laboratories.

  8. Self-organization of hydrogen gas bubbles rising above laser-etched metallic aluminum in a weakly basic aqueous solution.

    Science.gov (United States)

    Barmina, E V; Kuzmin, P G; Shafeev, G A

    2011-10-01

    Self-organization of hydrogen bubbles is reported under etching of metallic Aluminum in a weakly basic solution. The ascending gas bubbles drift to the areas with higher density of bubbles. As a result, ascending bubbles form various stationary structures whose symmetry is determined by the symmetry of the etched area. Bubbles are aligned along the bisectors of the contour of the etched area. The special laser-assisted profiling of the etched area in shape of a vortex induces a torque in the fluid above the etched area. The process is interpreted on the basis of Bernoulli equation.

  9. Effect of ethanol-wet-bonding technique on resin–enamel bonds

    Directory of Open Access Journals (Sweden)

    Muhammet Kerim Ayar

    2014-03-01

    Conclusion: The ethanol-wet-bonding technique may increase the bond strength of commercial adhesives to enamel. The chemical composition of the adhesives can affect the bond strength of adhesives when bonding to acid-etched enamel, using the ethanol-wet-bonding technique. Some adhesive systems used in the present study may simultaneously be applied to enamel and dentin using ethanol-wet-bonding. Furthermore, deploying ethanol-wet-bonding for the tested commercial adhesives to enamel can increase the adhesion abilities of these adhesives to enamel.

  10. Dynamic secondary ion mass spectroscopy of Au nanoparticles on Si wafer using Bi3+ as primary ion coupled with surface etching by Ar cluster ion beam: The effect of etching conditions on surface structure

    Science.gov (United States)

    Park, Eun Ji; Choi, Chang Min; Kim, Il Hee; Kim, Jung-Hwan; Lee, Gaehang; Jin, Jong Sung; Ganteför, Gerd; Kim, Young Dok; Choi, Myoung Choul

    2018-01-01

    Wet-chemically synthesized Au nanoparticles were deposited on Si wafer surfaces, and the secondary ions mass spectra (SIMS) from these samples were collected using Bi3+ with an energy of 30 keV as the primary ions. In the SIMS, Au cluster cations with a well-known, even-odd alteration pattern in the signal intensity were observed. We also performed depth profile SIMS analyses, i.e., etching the surface using an Ar gas cluster ion beam (GCIB), and a subsequent Bi3+ SIMS analysis was repetitively performed. Here, two different etching conditions (Ar1600 clusters of 10 keV energy or Ar1000 of 2.5 keV denoted as "harsh" or "soft" etching conditions, respectively) were used. Etching under harsh conditions induced emission of the Au-Si binary cluster cations in the SIMS spectra of the Bi3+ primary ions. The formation of binary cluster cations can be induced by either fragmentation of Au nanoparticles or alloying of Au and Si, increasing Au-Si coordination on the sample surface during harsh GCIB etching. Alternatively, use of the soft GCIB etching conditions resulted in exclusive emission of pure Au cluster cations with nearly no Au-Si cluster cation formation. Depth profile analyses of the Bi3+ SIMS combined with soft GCIB etching can be useful for studying the chemical environments of atoms at the surface without altering the original interface structure during etching.

  11. Correlation between the grain orientation dependence of color etching and chemical etching.

    Science.gov (United States)

    Bonyár, Attila; Szabó, Peter J

    2012-12-01

    A gray cast iron specimen was investigated by color and chemical etching with optical and atomic force microscopy, and the effect of grain orientation on the effectiveness of etching was examined. It was proven that the grain orientation dependence of chemical and color etching is just the opposite, and that the specimen surface after color etching is not uniformly smooth. Explanation for the layer structure of the color etched iron specimen is given.

  12. Two-year Randomized Clinical Trial Of Self-etching Adhesives And Selective Enamel Etching

    OpenAIRE

    Pena, MR; Rodrigues CE; JA; Ely; Giannini, C.; Reis, M; AF

    2016-01-01

    Objective: The aim of this randomized, controlled prospective clinical trial was to evaluate the clinical effectiveness of restoring noncarious cervical lesions with two self-etching adhesive systems applied with or without selective enamel etching. Methods: A one-step self-etching adhesive (Xeno V+) and a two-step self-etching system (Clearfil SE Bond) were used. The effectiveness of phosphoric acid selective etching of enamel margins was also evaluated. Fifty-six cavities were restored with...

  13. Metal assisted catalyzed etched (MACE) black Si: optics and device physics.

    Science.gov (United States)

    Toor, Fatima; Miller, Jeffrey B; Davidson, Lauren M; Duan, Wenqi; Jura, Michael P; Yim, Joanne; Forziati, Joanne; Black, Marcie R

    2016-08-25

    Metal-assisted catalyzed etching (MACE) of silicon (Si) is a controllable, room-temperature wet-chemical technique that uses a thin layer of metal to etch the surface of Si, leaving behind various nano- and micro-scale surface features, including nanowires (NWs), that can be tuned to achieve various useful engineering goals, in particular with respect to Si solar cells. In this review, we introduce the science and technology of MACE from the literature, and provide an in-depth analysis of MACE to enhance Si solar cells, including the outlook for commercial applications of this technology.

  14. TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors

    Science.gov (United States)

    Nakamura, Daisuke; Kimura, Taishi; Narita, Tetsuo; Suzumura, Akitoshi; Kimoto, Tsunenobu; Nakashima, Kenji

    2017-11-01

    A novel sintered tantalum carbide coating (SinTaC) prepared via a wet ceramic process is proposed as an approach to reducing the production cost and improving the crystal quality of bulk-grown crystals and epitaxially grown films of wide-bandgap semiconductors. Here, we verify the applicability of the SinTaC components as susceptors for chemical vapor deposition (CVD)-SiC and metal-organic chemical vapor deposition (MOCVD)-GaN epitaxial growth in terms of impurity incorporation from the SinTaC layers and also clarify the surface-roughness controllability of SinTaC layers and its advantage in CVD applications. The residual impurity elements in the SinTaC layers were confirmed to not severely incorporate into the CVD-SiC and MOCVD-GaN epilayers grown using the SinTaC susceptors. The quality of the epilayers was also confirmed to be equivalent to that of epilayers grown using conventional susceptors. Furthermore, the surface roughness of the SinTaC components was controllable over a wide range of average roughness (0.4 ≤ Ra ≤ 5 μm) and maximum height roughness (3 ≤ Rz ≤ 36 μm) through simple additional surface treatment procedures, and the surface-roughened SinTaC susceptor fabricated using these procedures was predicted to effectively reduce thermal stress on epi-wafers. These results confirm that SinTaC susceptors are applicable to epitaxial growth processes and are advantageous over conventional susceptor materials for reducing the epi-cost and improving the quality of epi-wafers.

  15. Light-emitting silicon nanowires obtained by metal-assisted chemical etching

    Science.gov (United States)

    Irrera, Alessia; Josè Lo Faro, Maria; D'Andrea, Cristiano; Alessio Leonardi, Antonio; Artoni, Pietro; Fazio, Barbara; Picca, Rosaria Anna; Cioffi, Nicola; Trusso, Sebastiano; Franzò, Giorgia; Musumeci, Paolo; Priolo, Francesco; Iacona, Fabio

    2017-04-01

    This review reports on a new process for the synthesis of Si nanowires (NWs), based on the wet etching of Si substrates assisted by a thin metal film. The approach exploits the thickness-dependent morphology of the metal layers to define uncovered nanometric Si regions, which behave as precursor sites for the formation of very dense (up to 1 × 1012 NW cm-2) arrays of long (up to several μm) and ultrathin (diameter of 5-9 nm) NWs. Intense photoluminescence (PL) peaks, characterized by maxima in the 640-750 nm range and by an external quantum efficiency of 0.5%, are observed when the Si NWs are excited at room temperature. The spectra show a blueshift if the size of the NW is decreased, in agreement with the occurrence of quantum confinement effects. The same etching process can be used to obtain ultrathin Si/Ge NWs from a Si/Ge multi-quantum well. The Si/Ge NWs exhibit—in addition to the Si-related PL peak—a signal at about 1240 nm due to Ge nanostructures. The huge surface area of the Si NW arrays can be exploited for sensing and analytical applications. The dependence of the PL intensity on the chemical composition of the surface indeed suggests interesting perspectives for the detection of gaseous molecules. Moreover, Si NWs decorated with Ag nanoparticles can be effectively employed in the interference-free laser desorption-ionization mass spectrometry of low-molecular-weight analytes. A device based on conductive Si NWs, showing intense and stable electroluminescence at an excitation voltage as low as 2 V, is also presented. The unique features of the proposed synthesis (the process is cheap, fast, maskless and compatible with Si technology) and the unusual optical properties of the material open the route towards new and unexpected perspectives for semiconductor NWs in photonics.

  16. System evaluation and microbial analysis of a sulfur cycle-based wastewater treatment process for Co-treatment of simple wet flue gas desulfurization wastes with freshwater sewage.

    Science.gov (United States)

    Qian, Jin; Liu, Rulong; Wei, Li; Lu, Hui; Chen, Guang-Hao

    2015-09-01

    A sulfur cycle-based wastewater treatment process, namely the Sulfate reduction, Autotrophic denitrification and Nitrification Integrated process (SANI(®) process) has been recently developed for organics and nitrogen removal with 90% sludge minimization and 35% energy reduction in the biological treatment of saline sewage from seawater toilet flushing practice in Hong Kong. In this study, sulfate- and sulfite-rich wastes from simple wet flue gas desulfurization (WFGD) were considered as a potential low-cost sulfur source to achieve beneficial co-treatment with non-saline (freshwater) sewage in continental areas, through a Mixed Denitrification (MD)-SANI process trialed with synthetic mixture of simple WFGD wastes and freshwater sewage. The system showed 80% COD removal efficiency (specific COD removal rate of 0.26 kg COD/kg VSS/d) at an optimal pH of 7.5 and complete denitrification through MD (specific nitrogen removal rate of 0.33 kg N/kg VSS/d). Among the electron donors in MD, organics and thiosulfate could induce a much higher denitrifying activity than sulfide in terms of both NO3(-) reduction and NO2(-) reduction, suggesting a much higher nitrogen removal rate in organics-, thiosulfate- and sulfide-based MD in MD-SANI compared to sulfide alone-based autotrophic denitrification in conventional SANI(®). Diverse sulfate/sulfite-reducing bacteria (SRB) genera dominated in the bacterial community of sulfate/sulfite-reducing up-flow sludge bed (SRUSB) sludge without methane producing bacteria detected. Desulfomicrobium-like species possibly for sulfite reduction and Desulfobulbus-like species possibly for sulfate reduction are the two dominant groups with respective abundance of 24.03 and 14.91% in the SRB genera. Diverse denitrifying genera were identified in the bacterial community of anoxic up-flow sludge bed (AnUSB) sludge and the Thauera- and Thiobacillus-like species were the major taxa. These results well explained the successful operation of the lab

  17. Infrared spectroscopy as alternative to wet chemical analysis to characterize Eucalyptus globulus pulps and predict their ethanol yield for a simultaneous saccharification and fermentation process.

    Science.gov (United States)

    Castillo, Rosario Del P; Baeza, Jaime; Rubilar, Joselyn; Rivera, Alvaro; Freer, Juanita

    2012-12-01

    Bioethanol can be obtained from wood by simultaneous enzymatic saccharification and fermentation step (SSF). However, for enzymatic process to be effective, a pretreatment is needed to break the wood structure and to remove lignin to expose the carbohydrates components. Evaluation of these processes requires characterization of the materials generated in the different stages. The traditional analytical methods of wood, pretreated materials (pulps), monosaccharides in the hydrolyzated pulps, and ethanol involve laborious and destructive methodologies. This, together with the high cost of enzymes and the possibility to obtain low ethanol yields from some pulps, makes it suitable to have rapid, nondestructive, less expensive, and quantitative methods to monitoring the processes to obtain ethanol from wood. In this work, infrared spectroscopy (IR) accompanied with multivariate analysis is used to characterize chemically organosolv pretreated Eucalyptus globulus pulps (glucans, lignin, and hemicellulosic sugars), as well as to predict the ethanol yield after a SSF process. Mid (4,000-400 cm(-1)) and near-infrared (12,500-4,000 cm(-1)) spectra of pulps were used in order to obtain calibration models through of partial least squares regression (PLS). The obtained multivariate models were validated by cross validation and by external validation. Mid-infrared (mid-IR)/NIR PLS models to quantify ethanol concentration were also compared with a mathematical approach to predict ethanol yield estimated from the chemical composition of the pulps determined by wet chemical methods (discrete chemical data). Results show the high ability of the infrared spectra in both regions, mid-IR and NIR, to calibrate and predict the ethanol yield and the chemical components of pulps, with low values of standard calibration and validation errors (root mean square error of calibration, root mean square error of validation (RMSEV), and root mean square error of prediction), high correlation

  18. Surface passivation of silicon nanowires based metal nano-particle assisted chemical etching for photovoltaic applications

    Science.gov (United States)

    Ben Rabha, Mohamed; Khezami, Lotfi; Jemai, Abdelbasset Bessadok; Alhathlool, Raed; Ajbar, Abdelhamid

    2017-03-01

    Metal Nano-particle Assisted Chemical Etching (MNpACE) is an extraordinary developed wet etching method for producing uniform semiconductor nanostructure (silicon nanowires) from patterned metallic film on crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs).The creation of different SiNWs morphologies by changing the etching time and its effects on optical and optoelectronic properties was investigated. The combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and optoelectronic properties especially a PL response at 640 nm are presented. As a results, the effective lifetime (τeff) and surface recombination velocity (Seff) evolution of SiNWs after stain etching treatment showed significant improvements and less than 1% reflectance was achieved over the wavelength range of 400-800 nm and more than 36% reduction was observed compared to untreated surface. It has, thus, been demonstrated that all these factors may lead to improved energy efficiency from 8% to nearly 14.2% for a cell with SiNWs treated in acid (HF/HNO3/H2O) solution.

  19. Field theory of self-organized fractal etching.

    Science.gov (United States)

    Gabrielli, A; Muñoz, M A; Sapoval, B

    2001-07-01

    We propose a phenomenological field theoretical approach to the chemical etching of a disordered solid. The theory is based on a recently proposed dynamical etching model. Through the introduction of a set of Langevin equations for the model evolution, we are able to map the problem into a field theory related to isotropic percolation. To the best of the author's knowledge, this constitutes the first application of field theory to a problem of chemical dynamics. By using this mapping, many of the etching process critical properties are seen to be describable in terms of the percolation renormalization group fixed point. The emerging field theory has the peculiarity of being self-organized in the sense that without any parameter fine tuning the system develops fractal properties up to a certain scale controlled solely by the volume V of the etching solution. In the limit V-->infinity the upper cutoff goes to infinity and the system becomes scale invariant. We present also a finite size scaling analysis and discuss the relation of this particular etching mechanism to gradient percolation. Finally, the possibility of considering this mechanism as a generic path to self-organized criticality is analyzed, with the characteristics of being closely related to a real physical system and therefore more directly accessible to experiments.

  20. Adiabatic tapered optical fiber fabrication in two step etching

    Science.gov (United States)

    Chenari, Z.; Latifi, H.; Ghamari, S.; Hashemi, R. S.; Doroodmand, F.

    2016-01-01

    A two-step etching method using HF acid and Buffered HF is proposed to fabricate adiabatic biconical optical fiber tapers. Due to the fact that the etching rate in second step is almost 3 times slower than the previous droplet etching method, terminating the fabrication process is controllable enough to achieve a desirable fiber diameter. By monitoring transmitted spectrum, final diameter and adiabaticity of tapers are deduced. Tapers with losses about 0.3 dB in air and 4.2 dB in water are produced. The biconical fiber taper fabricated using this method is used to excite whispering gallery modes (WGMs) on a microsphere surface in an aquatic environment. So that they are suitable to be used in applications like WGM biosensors.

  1. Preparation and Photocatalytic Activity of Potassium-Incorporated Titanium Oxide Nanostructures Produced by the Wet Corrosion Process Using Various Titanium Alloys

    Science.gov (United States)

    Lee, So Yoon; Lee, Choong Hyun; Kim, Do Yun; Locquet, Jean-Pierre; Seo, Jin Won

    2015-01-01

    Nanostructured potassium-incorporated Ti-based oxides have attracted much attention because the incorporated potassium can influence their structural and physico-chemical properties. With the aim of tuning the structural and physical properties, we have demonstrated the wet corrosion process (WCP) as a simple method for nanostructure fabrication using various Ti-based materials, namely Ti–6Al–4V alloy (TAV), Ti–Ni (TN) alloy and pure Ti, which have 90%, 50% and 100% initial Ti content, respectively. We have systematically investigated the relationship between the Ti content in the initial metal and the precise condition of WCP to control the structural and physical properties of the resulting nanostructures. The WCP treatment involved various concentrations of KOH solutions. The precise conditions for producing K-incorporated nanostructured titanium oxide films (nTOFs) were strongly dependent on the Ti content of the initial metal. Ti and TAV yielded one-dimensional nanowires of K-incorporated nTOFs after treatment with 10 mol/L-KOH solution, whereas TN required a higher concentration (20 mol/L-KOH solution) to produce comparable nanostructures. The obtained nanostructures revealed a blue-shift in UV absorption spectra due to the quantum confinement effects. A significant enhancement of the photocatalytic activity was observed via the chromomeric change and the intermediate formation of methylene blue molecules under UV irradiation. This study demonstrates the WCP as a simple, versatile and scalable method for the production of nanostructured K-incorporated nTOFs to be used as high-performance photocatalysts for environmental and energy applications. PMID:28347071

  2. Thermal history-based etching

    Science.gov (United States)

    Simpson, John T.

    2017-11-28

    A method for adjusting an etchability of a first borosilicate glass by heating the first borosilicate glass; combining the first borosilicate glass with a second borosilicate glass to form a composite; and etching the composite with an etchant. A material having a protrusive phase and a recessive phase, where the protrusive phase protrudes from the recessive phase to form a plurality of nanoscale surface features, and where the protrusive phase and the recessive phase have the same composition.

  3. Influence of Pre-etching Times on Fatigue Strength of Self-etch Adhesives to Enamel.

    Science.gov (United States)

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Endo, Hajime; Tsuchiya, Kenji; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    To use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence of phosphoric acid pre-etching times prior to application of self-etch adhesives on enamel bonding. Two single-step self-etch universal adhesives (Prime&Bond Elect and Scotchbond Universal), a conventional single-step self-etch adhesive (G-ӕnial Bond), and a conventional two-step self-etch adhesive (OptiBond XTR) were used. The SBS and SFS were obtained with phosphoric acid pre-etching for 3, 10, or 15 s prior to application of the adhesives, and without pre-etching (0 s) as a control. A staircase method was used to determine the SFS with 10 Hz frequency for 50,000 cycles or until failure occurred. The mean demineralization depth for each treated enamel surface was also measured using a profilometer. For all the adhesives, the groups with pre-etching showed significantly higher SBS and SFS than groups without pre-etching. However, there was no significant difference in SBS and SFS among groups with > 3 s of preetching. In addition, although the groups with pre-etching showed significantly deeper demineralization depths than groups without pre-etching, there was no significant difference in depth among groups with > 3 s of pre-etching. Three seconds of phosphoric acid pre-etching prior to application of self-etch adhesive can enhance enamel bonding effectiveness.

  4. Plasmoids for etching and deposition

    Science.gov (United States)

    Pothiraja, Ramasamy; Bibinov, Nikita; Awakowicz, Peter

    2014-11-01

    In this manuscript we show fascinating properties of plasmoids, which are known to be self-sustained plasma entities, and can exist without being in contact with any power supply. Plasmoids are produced in a filamentary discharge in a Ar/CH4 mixture with a high production rate of about 105 s-1. It is observed that plasmoids etch the solid amorphous hydrocarbon film with high efficiency. Energy density of the plasmoid, which is estimated on the basis of glowing area of plasmoids in the photographic image and sublimation enthalpy of the etched hydrocarbon film, amounts to about 90 J m-3. This value is much lower than the energy density of observed ball lightning (natural plasmoid). A very surprising property is an attraction between plasmoids, and the formation of plasmoid-groups. Because of this attractive force, carbon material, which is collected in plasmoids by etching of the hydrocarbon film or by propagation through a methane/argon gas mixture, is compressed into crystals.

  5. Wet water glass production plant

    Directory of Open Access Journals (Sweden)

    Stanković Mirjana S.

    2003-01-01

    Full Text Available The IGPC Engineering Department designed basic projects for a wet hydrate dissolution plant, using technology developed in the IGPC laboratories. Several projects were completed: technological, machine, electrical, automation. On the basis of these projects, a production plant of a capacity of 75,000 t/y was manufactured, at "Zeolite Mira", Mira (VE, Italy, in 1997. and 1998, increasing detergent zeolite production, from 50,000 to 100,000 t/y. Several goals were realized by designing a wet hydrate dissolution plant. The main goal was increasing the detergent zeolite production. The technological cycle of NaOH was closed, and no effluents emitted, and there is no pollution (except for the filter cake. The wet water glass production process is fully automatized, and the product has uniform quality. The production process can be controlled manually, which is necessary during start - up, and repairs. By installing additional process equipment (centrifugal pumps and heat exchangers technological bottlenecks were overcome, and by adjusting the operation of autoclaves, and water glass filters and also by optimizing the capacities of process equipment.

  6. Etched multimode fiber Bragg gratings based refractometer

    Science.gov (United States)

    Tiwari, Umesh; Kaushik, Siddharth

    2017-08-01

    A Multimode Fiber Bragg Gratings for refractive index sensing has been demonstrated experimentally. The fabrication of Bragg gratings in the Standard step-index multimode fiber with a core diameter of 50 μm and a numerical aperture of 0.20 is carried out by phase mask method. The period of the phase mask is 1064 nm. The etching of cladding portion of grating region (2 cm) is carried out by Hydrofluoric acid (48%) for 15 minutes. The etching process causes reduction of cladding diameter by 55 μm which further enhances the interaction of light propagating in core mode with higher cladding modes. Solutions of varied concentrations of glycerol were prepared having corresponding refractive index. Shift in wavelength in the reflection peak of high-order mode L1 is observed when glycerol solution is passed over the cladding surface of grating region. The proposed sensor with 1-pm resolution was successfully employed for sensing of different glycerol solutions. The sensitivity of proposed sensor is 15000 pm/RIU and it can be used as potential sensing platform for bio-chemical applications.

  7. Etching of organosilicate glass low-k dielectric films in halogen plasmas

    CERN Document Server

    Vitale, S A

    2002-01-01

    The chemistry and kinetics of alternative etching chemistries for low-k dielectric materials are explored to improve the anisotropy of the etching process and to reduce the problems associated with postetch clean-up. Etching rates, selectivities, and etching yields of Black Diamond and Coral organosilicate glasses (OSGs) have been measured. Black Diamond and Coral are etched rapidly in F sub 2 , Cl sub 2 , and HBr high density plasmas, and Cl sub 2 +HBr plasmas have been identified as a viable process chemistry with several advantages over traditional fluorocarbon plasmas. The OSG films are not spontaneously etched by F sub 2 , Cl sub 2 , HBr molecules, Cl, or Br atoms, however, F atoms etch the OSGs spontaneously. F, Cl, and H atoms extract a substantial amount of carbon from the films, but Cl and H do not attack the OSG oxide matrix. The Coral films are more strongly depleted of carbon after halogen plasma etching than the Black Diamond. In addition, oxygen atoms extract nearly all of the carbon and nitroge...

  8. High-Performance Black Multicrystalline Silicon Solar Cells by a Highly Simplified Metal-Catalyzed Chemical Etching Method

    KAUST Repository

    Ying, Zhiqin

    2016-05-20

    A wet-chemical surface texturing technique, including a two-step metal-catalyzed chemical etching (MCCE) and an extra alkaline treatment, has been proven as an efficient way to fabricate high-efficiency black multicrystalline (mc) silicon solar cells, whereas it is limited by the production capacity and the cost cutting due to the complicated process. Here, we demonstrated that with careful control of the composition in etching solution, low-aspect-ratio bowl-like nanostructures with atomically smooth surfaces could be directly achieved by improved one-step MCCE and with no posttreatment, like alkali solution. The doublet surface texture of implementing this nanobowl structure upon the industrialized acidic-textured surface showed concurrent improvement in optical and electrical properties for realizing 18.23% efficiency mc-Si solar cells (156 mm × 156 mm), which is sufficiently higher than 17.7% of the solely acidic-textured cells in the same batch. The one-step MCCE method demonstrated in this study may provide a cost-effective way to manufacture high-performance mc-Si solar cells for the present photovoltaic industry. © 2016 IEEE.

  9. A Polymer-Rich Re-deposition Technique for Non-volatile Etching By-products in Reactive Ion Etching Systems

    Science.gov (United States)

    Limcharoen, A.; Pakpum, C.; Limsuwan, P.

    2013-07-01

    Re-deposition is a non-volatile etching by-product in reactive ion etching systems that is well known to cause dirt on etching work. In this study, we propose a novel etching method called the polymer-rich re-deposition technique, used particularly for improving the etched sidewall where the re-deposition is able to accumulate. This technique works by allowing the accumulated re-deposition on the etched sidewall to have a higher polymer species than the new compounds in the non-volatile etching by-product. The polymer-rich re-deposition is easy to remove along with the photo-resist mask residual at the photo-resist strip step using an isopropyl alcohol-based solution. The traditional, additional cleaning process step used to remove the re-deposition material is not required anymore, so this reduces the overall processing time. The technique is demonstrated on an Al2O3-TiC substrate by C4F8 plasma, and the EDX spectrum confirms that the polymer re-deposition has C and F atoms as the dominant atoms, suggesting that it is a C—F polymer re-deposition.

  10. AAPSM repair utilizing transparent etch stop layer

    Science.gov (United States)

    Taylor, Darren; Cangemi, Michael; Lassiter, Matthew; Cangemi, Marc; Poortinga, Eric

    2004-12-01

    Repair of etched quartz defects on AAPSM products negatively affect manufacturability in the mask shop. Currently there are few solutions to repair etched quartz defects, two of these include mechanical removal or a combination of topography mapping and FIB milling of the defect. Both of the above methods involve large capital investments specifically for etched quartz repair. The method presented in this study readily repairs etched quartz without the need to purchase additional tools for AAPSM repair. Photronics' Advanced Materials Program has developed a transparent etch stop layer (TESL) integrated into the binary blank for the purpose of building AAPSM products with a high yield component. This etch stop layer is located under a layer of sputtered SiO2 deposited to 180° for a given lithography wavelength. These blanks can be used for a variety of etched quartz applications including cPSM and CPL. Photronics has developed software that reads in defect locations from automatic inspection tools and the jobdeck. A "repair" layer is created for the defect file and the plate is then re-exposed on the mask lithography tool. The defects are then etched away using the etch stop to control the phase of the surrounding trench. The repair method was tested using programmed defect masks from single etched 193nm AAPSM technologies. Inspection, SEM, AIMS and profilometry results will be shown.

  11. A new remote optical wetness sensor and its applications

    NARCIS (Netherlands)

    Heusinkveld, B.G.; Berkowicz, S.M.; Jacobs, A.F.G.; Hillen, W.C.A.M.; Holtslag, A.A.M.

    2008-01-01

    An optical wetness sensor (OWS) was developed for continuous surface wetness measurements. The sensor is an all-weather instrument that does not interfere with the surface wetting and drying process and is unaffected by solar radiation. It is equipped with its own light source with which it can scan

  12. Wetting, Prewetting and Superfluidity

    OpenAIRE

    Taborek, P.

    2009-01-01

    Experiments on adsorption and wetting of quantum fluids (4He and 3He) on weakly binding alkali metal substrates are reviewed. Helium on weak substrates can undergo a variety of phase transitions including wetting, prewetting, layering, and liquid-vapor transitions. Another characteristic feature of weak substrates is the absence of an immobile quasi solid layer which is present on all conventional strong substrates. Both the absence of the immobile layer and the interaction with surface phase...

  13. Etching of glass microchips with supercritical water.

    Science.gov (United States)

    Karásek, Pavel; Grym, Jakub; Roth, Michal; Planeta, Josef; Foret, František

    2015-01-07

    A novel method of etching channels in glass microchips with the most tunable solvent, water, was tested as an alternative to common hydrogen fluoride-containing etchants. The etching properties of water strongly depend on temperature and pressure, especially in the vicinity of the water critical point. The chips were etched at the subcritical, supercritical and critical temperature of water, and the resulting channel shape, width, depth and surface morphology were studied by scanning electron microscopy and 3D laser profilometry. Channels etched with the hot water were compared with the chips etched with standard hydrogen fluoride-containing solution. Depending on the water pressure and temperature, the silicate dissolved from the glass could be re-deposited on the channel surface. This interesting phenomenon is described together with the conditions necessary for its utilization. The results illustrate the versatility of pure water as a glass etching and surface morphing agent.

  14. Bottom-up and top-down fabrication of nanowire-based electronic devices: In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions

    Science.gov (United States)

    Kuo, Meng-Wei

    Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up techniques can achieve higher aspect ratio at reduced dimension without having surface and sub-surface damage, uniform doping distributions with abrupt junction profiles are less challenging for top-down methods. In this dissertation, nanowires fabricated by both methods were systematically investigated to understand: (1) the in situ incorporation of boron (B) dopants in Si nanowires grown by the bottom-up vapor-liquid-solid (VLS) technique, and (2) the impact of plasma-induced etch damage on InGaAs p +-i-n+ nanowire junctions for tunnel field-effect transistors (TFETs) applications. In Chapter 2 and 3, the in situ incorporation of B in Si nanowires grown using silane (SiH4) or silicon tetrachloride (SiCl4) as the Si precursor and trimethylboron (TMB) as the p-type dopant source is investigated by I-V measurements of individual nanowires. The results from measurements using a global-back-gated test structure reveal nonuniform B doping profiles on nanowires grown from SiH4, which is due to simultaneous incorporation of B from nanowire surface and the catalyst during VLS growth. In contrast, a uniform B doping profile in both the axial and radial directions is achieved for TMBdoped Si nanowires grown using SiCl4 at high substrate temperatures. In Chapter 4, the I-V characteristics of wet- and dry-etched InGaAs p+-i-n+ junctions with different mesa geometries, orientations, and perimeter-to-area ratios are compared to evaluate the impact of the dry etch process on the junction leakage current properties. Different post-dry etch treatments, including wet etching and thermal annealing, are performed and the effectiveness of each is assessed by temperaturedependent I-V measurements. As compared to wet-etched control devices, dry-etched junctions have a significantly

  15. Effect of a re‑wetting agent on bond strength of an adhesive to ...

    African Journals Online (AJOL)

    Objective: This study investigated the effect of a re‑wetting agent on the microtensile bond strengths (μTBS) of primary and permanent dentin after acid or laser etching. Materials and Methods: Twelve permanent and 12 primary molar teeth were ground to expose an occlusal dentin surface. Each group teeth were randomly ...

  16. Anisotropic Etching of Hexagonal Boron Nitride and Graphene: Question of Edge Terminations

    Energy Technology Data Exchange (ETDEWEB)

    Stehle, Yijing Y. [Oak Ridge National Laboratory, Oak; Sang, Xiahan [Oak Ridge National Laboratory, Oak; Unocic, Raymond R. [Oak Ridge National Laboratory, Oak; Voylov, Dmitry [University of Tennessee, Knoxville, Tennessee 37996, United States; Jackson, Roderick K. [National Renewable Energy Laboratory, Golden, Colorado 80401, United States; Smirnov, Sergei [Department; Vlassiouk, Ivan [Oak Ridge National Laboratory, Oak

    2017-11-21

    Chemical vapor deposition (CVD) has been established as the most effective way to grow large area two-dimensional materials. Direct study of the etching process can reveal subtleties of this competing with the growth reaction and thus provide the necessary details of the overall growth mechanism. Here we investigate hydrogen-induced etching of hBN and graphene and compare the results with the classical kinetic Wulff construction model. Formation of the anisotropically etched holes in the center of hBN and graphene single crystals was observed along with the changes in the crystals' circumference. We show that the edges of triangular holes in hBN crystals formed at regular etching conditions are parallel to B-terminated zigzags, opposite to the N-terminated zigzag edges of hBN triangular crystals. The morphology of the etched hBN holes is affected by a disbalance of the B/N ratio upon etching and can be shifted toward the anticipated from the Wulff model N-terminated zigzag by etching in a nitrogen buffer gas instead of a typical argon. For graphene, etched hexagonal holes are terminated by zigzag, while the crystal circumference is gradually changing from a pure zigzag to a slanted angle resulting in dodecagons.

  17. Micromorphological characterization of adhesive interface of sound dentin and total-etch and self-etch adhesives.

    Science.gov (United States)

    Drobac, Milan; Stojanac, Igor; Ramić, Bojana; Premović, Milica; Petrović, Ljubomir

    2015-01-01

    The ultimate goal in restorative dentistry has always been to achieve strong and permanent bond between the dental tissues and filling materials. It is not easy to achieve this task because the bonding process is different for enamel and dentin-dentin is more humid and more organic than enamel. It is moisture and organic nature of dentin that make this hard tissue very complex to achieve adhesive bond. One of the first and most widely used tools for examining the adhesive bond between hard dental tissues and composite restorative materials is scanning electron microscopy. The aim of this study was scanning electron microscopy analyzes the interfacial micro morphology of total-etch and self-etch adhesives. Micro morphological characteristics of interface between total-etch adhesive (Prime & Bond NT) in combination with the corresponding composite (Ceram X Mono) were compared with those of self-etching adhesive (AdheSE One) in, combination with the corresponding composite (Tetric EvoCeram). The specimens were observed under 1000 x magnification of scanning electron microscopy (JEOL, JSM-6460 Low Vacuum). Measurement of the thickness of the hybrid layer of the examined com posite systems was performed with the software of the device used (NIH Image Analyser). Micromorphological analysis of interface showed that the hybrid layer in sound dentin was well formed, its average thickness being 2.68 microm, with a large number of resin tags and a large amount of lateral branches for specimens with a composite system Prime & Bond NT-Ceram X Mono. However, the specimens' with composite systems Adhese One-Tetric EvoCeram did not show the presence of hybrid layer and the resin tags were poorly represented. The results of this study suggest that total-etch adhesives bond better with sound dentin than self-etch adhesive.

  18. Influence of Si wafer thinning processes on (sub)surface defects

    Science.gov (United States)

    Inoue, Fumihiro; Jourdain, Anne; Peng, Lan; Phommahaxay, Alain; De Vos, Joeri; Rebibis, Kenneth June; Miller, Andy; Sleeckx, Erik; Beyne, Eric; Uedono, Akira

    2017-05-01

    Wafer-to-wafer three-dimensional (3D) integration with minimal Si thickness can produce interacting multiple devices with significantly scaled vertical interconnections. Realizing such a thin 3D structure, however, depends critically on the surface and subsurface of the remaining backside Si after the thinning processes. The Si (sub)surface after mechanical grinding has already been characterized fruitfully for a range of few dozen of μm. Here, we expand the characterization of Si (sub)surface to 5 μm thickness after thinning process on dielectric bonded wafers. The subsurface defects and damage layer were investigated after grinding, chemical mechanical polishing (CMP), wet etching and plasma dry etching. The (sub)surface defects were characterized using transmission microscopy, atomic force microscopy, and positron annihilation spectroscopy. Although grinding provides the fastest removal rate of Si, the surface roughness was not compatible with subsequent processing. Furthermore, mechanical damage such as dislocations and amorphous Si cannot be reduced regardless of Si thickness and thin wafer handling systems. The CMP after grinding showed excellent performance to remove this grinding damage, even though the removal amount is 1 μm. For the case of Si thinning towards 5 μm using grinding and CMP, the (sub)surface is atomic scale of roughness without vacancy. For the case of grinding + dry etch, vacancy defects were detected in subsurface around 0.5-2 μm. The finished surface after wet etch remains in the nm scale in the strain region. By inserting a CMP step in between grinding and dry etch it is possible to significantly reduce not only the roughness, but also the remaining vacancies at the subsurface. The surface of grinding + CMP + dry etching gives an equivalent mono vacancy result as to that of grinding + CMP. This combination of thinning processes allows development of extremely thin 3D integration devices with minimal roughness and vacancy surface.

  19. Advanced methods for the treatment of organic aqueous wastes: wet air oxidation and wet peroxide oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Debellefontaine, Hubert; Chakchouk, Mehrez; Foussard, Jean Noel [Institut National des Sciences Appliquees (INSA), 31 - Toulouse (France). Dept. de Genie des Procedes Industriels; Tissot, Daniel; Striolo, Phillipe [IDE Environnement S.A., Toulouse (France)

    1993-12-31

    There is a growing concern about the problems of wastes elimination. Various oxidation techniques are suited for elimination of organic aqueous wastes, however, because of the environmental drawbacks of incineration, liquid phase oxidation should be preferred. `Wet Air Oxidation` and `Wet Peroxide Oxidation`are alternative processes which are discussed in this paper. 17 refs., 13 figs., 4 tabs.

  20. Etching radical controlled gas chopped deep reactive ion etching

    Science.gov (United States)

    Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

    2013-10-01

    A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

  1. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  2. Self-etch and etch-and-rinse adhesive systems in clinical dentistry.

    Science.gov (United States)

    Ozer, Fusun; Blatz, Markus B

    2013-01-01

    Current adhesive systems follow either an "etch-and-rinse" or "self-etch" approach, which differ in how they interact with natural tooth structures. Etch-and-rinse systems comprise phosphoric acid to pretreat the dental hard tissues before rinsing and subsequent application of an adhesive. Self-etch adhesives contain acidic monomers, which etch and prime the tooth simultaneously. Etch-and-rinse adhesives are offered as two- or three-step systems, depending on whether primer and bonding are separate or combined in a single bottle. Similarly, self-etch adhesives are available as one- or two-step systems. Both etch-and-rinse and self-etch systems form a hybrid layer as a result of resins impregnating the porous enamel or dentin. Despite current trends toward fewer and simpler clinical application steps, one-step dentin bonding systems exhibit bonding agent lower bond strengths and seem less predictable than multi-step etch-and-rinse and self-etch systems. The varying evidence available today suggests that the choice between etch-and-rinse and self-etch systems is often a matter of personal preference. In general, however, phosphoric acid creates a more pronounced and retentive etching pattern in enamel. Therefore, etch-and-rinse bonding systems are often preferred for indirect restorations and when large areas of enamel are still present. Conversely, self-etch adhesives provide superior and more predictable bond strength to dentin and are, consequently, recommended for direct composite resin restorations, especially when predominantly supported by dentin.

  3. Plasma Processing of SRF Cavities for the next Generation Of Particle Accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Vuskovic, Leposava

    2015-11-23

    The cost-effective production of high frequency accelerating fields are the foundation for the next generation of particle accelerators. The Ar/Cl2 plasma etching technology holds the promise to yield a major reduction in cavity preparation costs. Plasma-based dry niobium surface treatment provides an excellent opportunity to remove bulk niobium, eliminate surface imperfections, increase cavity quality factor, and bring accelerating fields to higher levels. At the same time, the developed technology will be more environmentally friendly than the hydrogen fluoride-based wet etching technology. Plasma etching of inner surfaces of standard multi-cell SRF cavities is the main goal of this research in order to eliminate contaminants, including niobium oxides, in the penetration depth region. Successful plasma processing of multi-cell cavities will establish this method as a viable technique in the quest for more efficient components of next generation particle accelerators. In this project the single-cell pill box cavity plasma etching system is developed and etching conditions are determined. An actual single cell SRF cavity (1497 MHz) is plasma etched based on the pill box cavity results. The first RF test of this plasma etched cavity at cryogenic temperature is obtained. The system can also be used for other surface modifications, including tailoring niobium surface properties, surface passivation or nitriding for better performance of SRF cavities. The results of this plasma processing technology may be applied to most of the current SRF cavity fabrication projects. In the course of this project it has been demonstrated that a capacitively coupled radio-frequency discharge can be successfully used for etching curved niobium surfaces, in particular the inner walls of SRF cavities. The results could also be applicable to the inner or concave surfaces of any 3D structure other than an SRF cavity.

  4. ALTERNATIVE TO CHROME ETCHING PROCESSES FOR METALS

    Science.gov (United States)

    Several industries, including the National Center for Manufacturing Science have initiated programs for chrome abatement. The programs, however, generally focus on chrome reduction by use of existing technologies and do not address the elimination of chrome in pretreatment proces...

  5. Crystallographic Silicon-Etching for Ultra-High Aspect-Ratio FinFET

    OpenAIRE

    Jovanovic, V.; Suligoj, T.; Nanver, L.K.

    2008-01-01

    The fabrication process for the FinFET with ultra-high fin-height to fin-width aspect-ratio is presented. The processing is based on the crystallographic etching of (110) bulk silicon-wafers by TMAH to expose the vertical (111) planes. The nitride-spacers are used as the hard-mask for the fin-etching and the fins are isolated by the planarization and etch-back of the thick isolation oxide. The demonstration devices exhibit nearly ideal S of 62-64 mV/dec and DIBL of 10 mV/V or lower, for the g...

  6. Effect of active pretreatment of self-etching primers on the ultramorphology of intact primary and permanent tooth enamel.

    Science.gov (United States)

    Cehreli, Sevi Burcak; Eminkahyagil, Neslihan

    2006-01-01

    The objective of this study was to evaluate the ultramorphological changes after agitated and nonagitated application of self-etching primer systems on unground primary and permanent enamel. Five self-etching primer systems were used: (1) Clearfil SE Bond; (2) Clearfil Protect Bond; (3) Adper Prompt; (4) Xeno III; and (5) nonrinse conditioner (NRC). Noncarious human primary and permanent incisors were collected and stored frozen until used. Intact labial surfaces were divided into 2 halves, applying the self-etching primers with (active application) and without (inactive agitation) using a microbrush within the times recommended by the manufacturers. Treated surfaces were further processed for ultramorphological evaluation under scanning electron microscope (SEM). All tested self-etching systems produced weaker etch patterns and less dissolution of enamel surface compared with acid-etched samples in both primary and permanent teeth. Except for NRC and Adper Prompt, agitation of the surface did not increase the etching efficacy. Clearfil SE Bond and Clearfil Protect Bond resulted in similar morphological features following application in either mode. While agitation of self-etching primers may improve etching efficacy, this effect appears to be dependent on the material used. Phosphoric acid produces well-defined etching patterns on intact primary and permanent enamel.

  7. Consideration of correlativity between litho and etching shape

    Science.gov (United States)

    Matsuoka, Ryoichi; Mito, Hiroaki; Shinoda, Shinichi; Toyoda, Yasutaka

    2012-03-01

    We developed an effective method for evaluating the correlation of shape of Litho and Etching pattern. The purpose of this method, makes the relations of the shape after that is the etching pattern an index in wafer same as a pattern shape on wafer made by a lithography process. Therefore, this method measures the characteristic of the shape of the wafer pattern by the lithography process and can predict the hotspot pattern shape by the etching process. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used wafer CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and lithography management, and this has a big impact on the semiconductor market that centers on the semiconductor business. 2-dimensional shape of wafer quantification is important as optimal solution over these problems. Although 1-dimensional shape measurement has been performed by the conventional technique, 2-dimensional shape management is needed in the mass production line under the influence of RET. We developed the technique of analyzing distribution of shape edge performance as the shape management technique. In this study, we conducted experiments for correlation method of the pattern (Measurement Based Contouring) as two-dimensional litho and etch evaluation technique. That is, observation of the identical position of a litho and etch was considered. It is possible to analyze variability of the edge of the same position with high precision.

  8. Local electronic structure and photoelectrochemical activity of partial chemically etched Ti-doped hematite

    Science.gov (United States)

    Rioult, Maxime; Belkhou, Rachid; Magnan, Hélène; Stanescu, Dana; Stanescu, Stefan; Maccherozzi, Francesco; Rountree, Cindy; Barbier, Antoine

    2015-11-01

    The direct conversion of solar light into chemical energy or fuel through photoelectrochemical water splitting is promising as a clean hydrogen production solution. Ti-doped hematite (Ti:α-Fe2O3) is a potential key photoanode material, which despite its optimal band gap, excellent chemical stability, abundance, non-toxicity and low cost, still has to be improved. Here we give evidence of a drastic improvement of the water splitting performances of Ti-doped hematite photoanodes upon a HCl wet-etching. In addition to the topography investigation by atomic force microscopy, a detailed determination of the local electronic structure has been carried out in order to understand the phenomenon and to provide new insights in the understanding of solar water splitting. Using synchrotron radiation based spectromicroscopy (X-PEEM), we investigated the X-ray absorption spectral features at the L3 Fe edge of the as grown surface and of the wet-etched surface on the very same sample thanks to patterning. We show that HCl wet etching leads to substantial surface modifications of the oxide layer including increased roughness and chemical reduction (presence of Fe2 +) without changing the band gap. We demonstrate that these changes are profitable and correlated to the drastic changes of the photocatalytic activity.

  9. Erbium doped stain etched porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Diaz, B. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Diaz-Herrera, B. [Departamento de Energia Fotovoltaica, Instituto Tecnologico de Energias Renovables (ITER), Poligono Industrial de Granadilla, 38611 S/C Tenerife (Spain); Guerrero-Lemus, R. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain)], E-mail: rglemus@ull.es; Mendez-Ramos, J.; Rodriguez, V.D. [Departamento de Fisica Fundamental, Experimental Electronica y Sistemas, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Hernandez-Rodriguez, C. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Martinez-Duart, J.M. [Departamento de Fisica Aplicada, C-XII, Universidad Autonoma de Madrid, 28049 Cantoblanco, Madrid (Spain)

    2008-01-15

    In this work a simple erbium doping process applied to stain etched porous silicon layers (PSLs) is proposed. This doping process has been developed for application in porous silicon solar cells, where conventional erbium doping processes are not affordable because of the high processing cost and technical difficulties. The PSLs were formed by immersion in a HF/HNO{sub 3} solution to properly adjust the porosity and pore thickness to an optimal doping of the porous structure. After the formation of the porous structure, the PSLs were analyzed by means of nitrogen BET (Brunauer, Emmett and Teller) area measurements and scanning electron microscopy. Subsequently, the PSLs were immersed in a saturated erbium nitrate solution in order to cover the porous surface. Then, the samples were subjected to a thermal process to activate the Er{sup 3+} ions. Different temperatures and annealing times were used in this process. The photoluminescence of the PSLs was evaluated before and after the doping processes and the composition was analyzed by Fourier transform IR spectroscopy.

  10. Wet gas sampling

    Energy Technology Data Exchange (ETDEWEB)

    Welker, T.F.

    1997-07-01

    The quality of gas has changed drastically in the past few years. Most gas is wet with hydrocarbons, water, and heavier contaminants that tend to condense if not handled properly. If a gas stream is contaminated with condensables, the sampling of that stream must be done in a manner that will ensure all of the components in the stream are introduced into the sample container as the composite. The sampling and handling of wet gas is extremely difficult under ideal conditions. There are no ideal conditions in the real world. The problems related to offshore operations and other wet gas systems, as well as the transportation of the sample, are additional problems that must be overcome if the analysis is to mean anything to the producer and gatherer. The sampling of wet gas systems is decidedly more difficult than sampling conventional dry gas systems. Wet gas systems were generally going to result in the measurement of one heating value at the inlet of the pipe and a drastic reduction in the heating value of the gas at the outlet end of the system. This is caused by the fallout or accumulation of the heavier products that, at the inlet, may be in the vapor state in the pipeline; hence, the high gravity and high BTU. But, in fact, because of pressure and temperature variances, these liquids condense and form a liquid that is actually running down the pipe as a stream or is accumulated in drips to be blown from the system. (author)

  11. Fundamental Technical Elements of Freeze-fracture/Freeze-etch in Biological Electron Microscopy

    Science.gov (United States)

    Freeze-fracture/freeze-etch describes a process whereby specimens, typically biological or nanomaterial in nature, are frozen, fractured, and replicated to generate a carbon/platinum "cast" intended for examination by transmission electron microscopy. Specimens are subjected to u...

  12. Atomic Layer Etching : What can we learn from Atomic Layer Deposition?

    NARCIS (Netherlands)

    Faraz, T.; Roozeboom, F.; Knoops, H.C.M.; Kessels, W.M.M.

    2015-01-01

    Current trends in semiconductor device manufacturing impose extremely stringent requirements on nanoscale processing techniques, both in terms of accurately controlling material properties and in terms of precisely controlling nanometer dimensions. To take nanostructuring by dry etching to the next

  13. Biodegradation of wet-white leather

    OpenAIRE

    Ollé Otero, Lluís; Jorba Rafart, Montse; Font Vallès, Joaquim; Shendrik, Alexander; Bacardit Dalmases, Anna

    2011-01-01

    This paper deals with the study of the physical, chemical and biological processes associated with the deterioration of wet-white leather. The samples of leather were exposed for eight months to outdoor weathering and then their properties were subsequently evaluated. The results indicate that resistance and dimensional stability of wet-white (THPS-syntan) leather is higher than that of chrometanned leather. The comparative work with chrome leather was described earlier.

  14. Deep Reactive Ion Etching for High Aspect Ratio Microelectromechanical Components

    DEFF Research Database (Denmark)

    Jensen, Søren; Yalcinkaya, Arda Deniz; Jacobsen, S.

    2004-01-01

    A deep reactive ion etch (DRIE) process for fabrication of high aspect ratio trenches has been developed. Trenches with aspect ratios exceeding 20 and vertical sidewalls with low roughness have been demonstrated. The process has successfully been used in the fabrication of silicon-on-insulator (SOI......) released comb drive based resonators and tunable capacitors for MEMS applications. Brief characterizations of the devices are presented....

  15. Effects of Alkaline Pre-Etching to Metal Hydride Alloys

    Directory of Open Access Journals (Sweden)

    Tiejun Meng

    2017-10-01

    Full Text Available The responses of one AB5, two AB2, four A2B7, and one C14-related body-centered-cubic (BCC metal hydrides to an alkaline-etch (45% KOH at 110 °C for 2 h were studied by internal resistance, X-ray diffraction, scanning electron microscope, inductively coupled plasma, and AC impedance measurements. Results show that while the etched rare earth–based AB5 and A2B7 alloys surfaces are covered with hydroxide/oxide (weight gain, the transition metal–based AB2 and BCC-C14 alloys surfaces are corroded and leach into electrolyte (weight loss. The C14-predominated AB2, La-only A2B7, and Sm-based A2B7 showed the most reduction in the internal resistance with the alkaline-etch process. Etched A2B7 alloys with high La-contents exhibited the lowest internal resistance and are suggested for use in the high-power application of nickel/metal hydride batteries.

  16. Wet oxidation of quinoline

    DEFF Research Database (Denmark)

    Thomsen, A.B.; Kilen, H.H.

    1998-01-01

    The influence of oxygen pressure (0.4 and 2 MPa). reaction time (30 and 60 min) and temperature (260 and 280 degrees C) on the wet oxidation of quinoline has been studied. The dominant parameters for the decomposition of quinoline were oxygen pressure and reaction temperature. whereas the reaction...... if low oxygen pressure or long reaction times were used. The reaction products derived from the experiment in which quinoline was mostly decomposed were studied with respect to biological degradation. The results showed that these products were highly digestible under activated sludge treatment....... The combined wet oxidation and biological treatment of reaction products resulted in 91% oxidation of the parent compound to CO2 and water. Following combined wet oxidation and biological treatment the sample showed low toxicity towards Nitrosomonas and no toxicity towards Nitrobacter. (C) 1998 Elsevier...

  17. Anisotropic etching of silicon for application in micro machine using plasma of SF{sub 6}/CH{sub 4}/O{sub 2}/Ar and SF{sub 6}/CF{sub 4}/O{sub 2}/Ar; Grabado anisotropico de silicio para aplicacion en micromaquinado usando plasmas de SF{sub 6}/CH{sub 4}/O{sub 2}/Ar y SF{sub 6}/CF{sub 4}/O{sub 2}/Ar

    Energy Technology Data Exchange (ETDEWEB)

    Reyes B, C. [Instituto Nacional de Astrofisica, Optica y Electronica, A.P. 51, 72000 Puebla (Mexico); Moshkalyov, S.A.; Swart, J.W. [Centro de Componentes Semiconductores, UNICAMP, 6061 CEP. 13083-970, Campinas, Sao Paulo (Brazil)]. e-mail: creyes@inaoep.mx

    2004-07-01

    We investigated the reactive ion etching of silicon using SF{sub 6}/CH{sub 4}(CF{sub 4})/O{sub 2}/Ar gas mixtures containing fluorine for MEMS applications. Etch rates and anisotropy of etch profiles were examined as a function of gas composition, material of electrode, and RF power. Etch depths were measured using a profilometers, and etch profiles were analyzed by scanning electron microscope. As a mask material, an aluminium film deposited by evaporation, was used. High anisotropy of etching of 0.95 was achieved at etch depths up to 20-30 micrometers and etch rates of approximately 0.3-0.6 {mu}m/min. Highly anisotropic etching is based on a mechanism that enhance the ion bombarding and protects the sidewalls due to polymerization and/or oxidation mechanisms in order to avoid the lateral etch. However, under the anisotropic etching conditions, considerable damages of the etched surfaces (roughness formation), were observed. After etching experiments, wet / dry cleaning procedures were applied to remove surface residues resulting from the reactive ion etching and to improve the etched surface morphology. (Author)

  18. Different regimes of dynamic wetting

    Science.gov (United States)

    Gustav, Amberg; Wang, Jiayu; Do-Quang, Minh; Shiomi, Junichiro; Physiochemical fluid mechanics Team; Maruyama-Chiashi Laboratory Team

    2014-11-01

    Dynamic wetting, as observed when a droplet contacts a dry solid surface, is important in various engineering processes, such as printing, coating, and lubrication. Our overall aim is to investigate if and how the detailed properties of the solid surface influence the dynamics of wetting. Here we discuss how surface roughness influences the initial dynamic spreading of a partially wetting droplet by studying the spreading on a solid substrate patterned with microstructures just a few micrometers in size. This is complemented by matching numerical simulations. We present a parameter map, based on the properties of the liquid and the solid surface, which identifies qualitatively different spreading regimes, where the spreading speed is limited by either the liquid viscosity, the surface properties, or the liquid inertia. The peculiarities of the different spreading regimes are studied by detailed numerical simulations, in conjuction with experiments. This work was financially supported in part by, the Japan Society for the Promotion of Science (J.W. and J.S) and Swedish Governmental Agency for Innovation Systems (M.D.-Q. and G.A).

  19. Wetting of Water on Graphene

    OpenAIRE

    Bera, Bijoyendra; Shahidzadeh, Noushine; Mishra, Himanshu; Bonn, Daniel

    2016-01-01

    The wetting properties of graphene have proven controversial and difficult to assess. The presence of a graphene layer on top of a substrate does not significantly change the wetting properties of the solid substrate, suggesting that a single graphene layer does not affect the adhesion between the wetting phase and the substrate. However, wetting experiments of water on graphene show contact angles that imply a large amount of adhesion. Here, we investigate the wetting of graphene by measurin...

  20. Control over the permeation of silica nanoshells by surface-protected etching with water.

    Science.gov (United States)

    Hu, Yongxing; Zhang, Qiao; Goebl, James; Zhang, Tierui; Yin, Yadong

    2010-10-14

    We demonstrate a water-based etching strategy for converting solid silica shells into porous ones with controllable permeability. It overcomes the challenges of the alkaline-based surface-protected etching process that we previously developed for the production of porous and hollow silica nanostructures. Mild etching around the boiling point of water partially breaks the imperfectly condensed silica network and forms soluble monosilicic acid, eventually producing mesoscale pores in the silica structures. With the surface protection from poly(vinyl pyrrolidone) (PVP), it is possible to maintain the overall shape of the silica structures while at the same time to create porosity inside. By using bulky PVP molecules which only protect the near-surface region, we are able to completely remove the interior silica and produce hollow particles. Because the etching is mild and controllable, this process is particularly useful for treating small silica particles or core-shell particles with very thin silica shells for which the alkaline-based etching method has been difficult to control. We demonstrated the precise control of the permeation of the chemical species through the porous silica shells by using a model reaction which involves the etching of Ag encapsulated inside Ag@SiO(2) by a halocarbon. It is expected that the water-based surface-protected etching method can be conveniently extended to the production of various porous silica shells containing functional materials whose diffusion to outside and/or reaction with outside species can be easily controlled.

  1. Using an energized oxygen micro-jet for improved graphene etching by focused electron beam

    Science.gov (United States)

    Kim, Songkil; Henry, Mathias; Fedorov, Andrei G.

    2015-12-01

    We report on an improved Focused Electron Beam Induced Etching (FEBIE) process, which exploits heated oxygen delivery via a continuous supersonic micro-jet resulting in faster graphene patterning and better etch feature definition. Positioning a micro-jet in close proximity to a graphene surface with minimal jet spreading due to a continuous regime of gas flow at the exit of the 10 μm inner diameter capillary allows for focused exposure of the surface to reactive oxygen at high mass flux and impingement energy of a supersonic gas stream localized to a small etching area exposed to electron beam. These unique benefits of focused supersonic oxygen delivery to the surface enable a dramatic increase in the etch rate of graphene with no parasitic carbon "halo" deposition due to secondary electrons from backscattered electrons (BSE) in the area surrounding the etched regions. Increase of jet temperature via local nozzle heating provides means for enhancing kinetic energy of impinging oxygen molecules, which further speed up the etch, thus minimizing the beam exposure time and required electron dose, before parasitic carbon film deposition due to BSE mediated decomposition of adsorbed hydrocarbon contaminants has a measurable impact on quality of graphene etched features. Interplay of different physical mechanisms underlying an oxygen micro-jet assisted FEBIE process is discussed with support from experimental observations.

  2. Using an energized oxygen micro-jet for improved graphene etching by focused electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Songkil; Henry, Mathias [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Fedorov, Andrei G., E-mail: agf@gatech.edu [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Parker H. Petit Institute for Bioengineering and Bioscience, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

    2015-12-07

    We report on an improved Focused Electron Beam Induced Etching (FEBIE) process, which exploits heated oxygen delivery via a continuous supersonic micro-jet resulting in faster graphene patterning and better etch feature definition. Positioning a micro-jet in close proximity to a graphene surface with minimal jet spreading due to a continuous regime of gas flow at the exit of the 10 μm inner diameter capillary allows for focused exposure of the surface to reactive oxygen at high mass flux and impingement energy of a supersonic gas stream localized to a small etching area exposed to electron beam. These unique benefits of focused supersonic oxygen delivery to the surface enable a dramatic increase in the etch rate of graphene with no parasitic carbon “halo” deposition due to secondary electrons from backscattered electrons (BSE) in the area surrounding the etched regions. Increase of jet temperature via local nozzle heating provides means for enhancing kinetic energy of impinging oxygen molecules, which further speed up the etch, thus minimizing the beam exposure time and required electron dose, before parasitic carbon film deposition due to BSE mediated decomposition of adsorbed hydrocarbon contaminants has a measurable impact on quality of graphene etched features. Interplay of different physical mechanisms underlying an oxygen micro-jet assisted FEBIE process is discussed with support from experimental observations.

  3. Mechanisms of Hydrocarbon Based Polymer Etch

    Science.gov (United States)

    Lane, Barton; Ventzek, Peter; Matsukuma, Masaaki; Suzuki, Ayuta; Koshiishi, Akira

    2015-09-01

    Dry etch of hydrocarbon based polymers is important for semiconductor device manufacturing. The etch mechanisms for oxygen rich plasma etch of hydrocarbon based polymers has been studied but the mechanism for lean chemistries has received little attention. We report on an experimental and analytic study of the mechanism for etching of a hydrocarbon based polymer using an Ar/O2 chemistry in a single frequency 13.56 MHz test bed. The experimental study employs an analysis of transients from sequential oxidation and Ar sputtering steps using OES and surface analytics to constrain conceptual models for the etch mechanism. The conceptual model is consistent with observations from MD studies and surface analysis performed by Vegh et al. and Oehrlein et al. and other similar studies. Parameters of the model are fit using published data and the experimentally observed time scales.

  4. Silicon Carbide Etching Using Chlorine Trifluoride Gas

    Science.gov (United States)

    Habuka, Hitoshi; Oda, Satoko; Fukai, Yasushi; Fukae, Katsuya; Takeuchi, Takashi; Aihara, Masahiko

    2005-03-01

    The etch rate, chemical reactions and etched surface of β-silicon carbide are studied in detail using chlorine trifluoride gas. The etch rate is greater than 10 μm min-1 at 723 K with a flow rate of 0.1 \\ell min-1 at atmospheric pressure in a horizontal reactor. The maximum etch rate at a substrate temperature of 773 K is 40 μm min-1 with a flow rate of 0.25 \\ell min-1. The step-like pattern that initially exists on the β-silicon carbide surface tends to be smoothed; the root-mean-square surface roughness decreases from its initial value of 5 μm to 1 μm within 15 min; this minimum value is maintained for more than 15 min. Therefore, chlorine trifluoride gas is considered to have a large etch rate for β-silicon carbide associated with making a rough surface smooth.

  5. Effects of small amount of impurities on etching for silicon diaphragm formation; Silicon diaphragm etching kako ni oyobosu gokubiryo fujunbutsu no eikyo kaiseki

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, H.; Abe, Y.; Yoneyama, T.; Ishikawa, J.; Takenaka, O. [Denso Corp., Aichi (Japan); Inoue, K. [Toyota Central Research and Development Labs., Inc., Aichi (Japan)

    1998-05-01

    Since semiconductor pressure sensors play a role of judging the intake pressure of engine for fuel injection control of the EFI system, they are indispensable parts of automobiles. Pressure is measured by electrically detecting the deflection of diaphragm formed on a silicon tip. The silicon diaphragm is processed through the silicon anisotropic etching technique by utilizing the dependency of the etching rate on the orientation of crystal plane. Since the characteristics of sensors are affected by the change in size of diaphragm formed on the tip and roughness of its surface due to the change in the degree of deflection, the control of processing accuracy is essential. From the etching in KOH aqueous solution, it was found that the etching was affected by small amount of impurities, such as ppb-level Pb and Cu. Effects of Pb and Cu were discussed using the oxidation-reduction potential between hydrogen generated during etching and Pb/Cu. The etching rate change, formation of rough surface by the small amount of impurities, and the anisotropy of chrystal plane are to be investigated in the future. 4 refs., 10 figs., 2 tabs.

  6. Combined D-optimal design and generalized regression neural network for modeling of plasma etching rate

    Directory of Open Access Journals (Sweden)

    You Hailong

    2014-01-01

    Full Text Available Plasma etching process plays a critical role in semiconductor manufacturing. Because physical and chemical mechanisms involved in plasma etching are extremely complicated, models supporting process control are difficult to construct. This paper uses a 35-run D-optimal design to efficiently collect data under well planned conditions for important controllable variables such as power, pressure, electrode gap and gas flows of Cl2 and He and the response, etching rate, for building an empirical underlying model. Since the relationship between the control and response variables could be highly nonlinear, a generalized regression neural network is used to select important model variables and their combination effects and to fit the model. Compared with the response surface methodology, the proposed method has better prediction performance in training and testing samples. A success application of the model to control the plasma etching process demonstrates the effectiveness of the methods.

  7. Nanograss and nanostructure formation on silicon using a modified deep reactive ion etching

    Science.gov (United States)

    Mehran, M.; Mohajerzadeh, S.; Sanaee, Z.; Abdi, Y.

    2010-05-01

    Silicon nanograss and nanostructures are realized using a modified deep reactive ion etching technique on both plane and vertical surfaces of a silicon substrate. The etching process is based on a sequential passivation and etching cycle, and it can be adjusted to achieve grassless high aspect ratio features as well as grass-full surfaces. The incorporation of nanostructures onto vertically placed parallel fingers of an interdigital capacitive accelerometer increases the total capacitance from 0.45 to 30 pF. Vertical structures with features below 100 nm have been realized.

  8. Wetting of real surfaces

    CERN Document Server

    Bormashenko, Edward Yu

    2013-01-01

    The problem of wetting and drop dynamics on various surfaces is very interesting from both the scientificas well as thepractical viewpoint, and subject of intense research.The results are scattered across papers in journals, sothis workwill meet the need for a unifying, comprehensive work.

  9. WET SOLIDS FLOW ENHANCEMENT

    Energy Technology Data Exchange (ETDEWEB)

    Hugo S. Caram; Natalie Foster

    1999-03-30

    The elastic modulus E of wet granular material was found to be of the order of 0.25 MPa, this value does not compare well with the value predicted for a cubic array of spheres under Hertzian contact were the predicted values were in the order of 250 MPa . The strain-stress behavior of a wet granular media was measured using a split Parfitt tensile tester. In all cases the stress increases linearly with distance until the maximum uniaxial tensile stress is reached. The stress then decreases exponentially with distance after this maximum is reached. The linear region indicates that wet solids behave elastically for stresses below the tensile stresses and can store significant elastic energy. The elastic deformation cannot be explained by analyzing the behavior of individual capillary bridges and requires accounting for the deformation of the solids particles. The elastic modulus of the wet granular material remains unexplained. New information was found to support the experimental finding and a first theory to explain the very small elastic modulus is presented. A new model based on the used of the finite element method is being developed.

  10. The Wet Chaparral

    OpenAIRE

    Hope, Audrey Marie

    2017-01-01

    The Wet Chaparral: Poetry at Home (Out There) is an MFA thesis exhibition of new sculptures by Audrey Hope. The thesis paper describes the exhibition, discusses the artist’s personal and artistic motivations, and analyzes writings relevant to the work.

  11. Etched silicon gratings for NGST

    Energy Technology Data Exchange (ETDEWEB)

    Ge, J.; Ciarlo, D.; Kuzmenko, P.; Macintosh, B.; Alcock, C.; Cook, K.

    1999-10-28

    The authors have developed the world's first etched silicon grisms at LLNL in September 1999. The high optical surface quality of the grisms allows diffraction-limited spectral resolution in the IR wavelengths where silicon has good transmission. They estimated that the scattering light level is less than 4% at 2.2 {micro}m. Silicon can significantly increase the dispersive power of spectroscopic instruments for NGST due to its very large refractive index (n = 3.4). For example, a silicon grism with 40 mm clear entrance aperture and a 46 wedge angle can provide R = 10,000--100,000 in {approximately} 1--10 {micro}m. The same grating working in the immersed reflection mode can provide {approximately} three times higher spectral resolution than in the transmission mode. To achieve a desired spectral resolution for NGST, the spectrograph size and weight can be significantly reduced if silicon gratings are used instead of conventional gratings.

  12. Elucidating the mysteries of wetting.

    Energy Technology Data Exchange (ETDEWEB)

    Webb, Edmund Blackburn, III (,; ); Bourdon, Christopher Jay; Grillet, Anne Mary; Sackinger, Philip A.; Grest, Gary Stephen; Emerson, John Allen; Ash, Benjamin Jesse; Heine, David R.; Brooks, Carlton, F.; Gorby, Allen D.

    2005-11-01

    Nearly every manufacturing and many technologies central to Sandia's business involve physical processes controlled by interfacial wetting. Interfacial forces, e.g. conjoining/disjoining pressure, electrostatics, and capillary condensation, are ubiquitous and can surpass and even dominate bulk inertial or viscous effects on a continuum level. Moreover, the statics and dynamics of three-phase contact lines exhibit a wide range of complex behavior, such as contact angle hysteresis due to surface roughness, surface reaction, or compositional heterogeneities. These thermodynamically and kinetically driven interactions are essential to the development of new materials and processes. A detailed understanding was developed for the factors controlling wettability in multicomponent systems from computational modeling tools, and experimental diagnostics for systems, and processes dominated by interfacial effects. Wettability probed by dynamic advancing and receding contact angle measurements, ellipsometry, and direct determination of the capillary and disjoining forces. Molecular scale experiments determined the relationships between the fundamental interactions between molecular species and with the substrate. Atomistic simulations studied the equilibrium concentration profiles near the solid and vapor interfaces and tested the basic assumptions used in the continuum approaches. These simulations provide guidance in developing constitutive equations, which more accurately take into account the effects of surface induced phase separation and concentration gradients near the three-phase contact line. The development of these accurate models for dynamic multicomponent wetting allows improvement in science based engineering of manufacturing processes previously developed through costly trial and error by varying material formulation and geometry modification.

  13. Treatment of ammonia by catalytic wet oxidation process over platinum-rhodium bimetallic catalyst in a trickle-bed reactor: effect of pH.

    Science.gov (United States)

    Hung, Chang-Mao; Lin, Wei-Bang; Ho, Ching-Lin; Shen, Yun-Hwei; Hsia, Shao-Yi

    2010-08-01

    This work adopted aqueous solutions of ammonia for use in catalytic liquid-phase reduction in a trickle-bed reactor with a platinum-rhodium bimetallic catalyst, prepared by the co-precipitation of chloroplatinic acid (H2PtCl6) and rhodium nitrate [Rh(NO3)3]. The experimental results demonstrated that a minimal amount of ammonia was removed from the solution by wet oxidation in the absence of any catalyst, while approximately 97.0% of the ammonia was removed by wet oxidation over the platinum-rhodium bimetallic catalyst at 230 degrees C with an oxygen partial pressure of 2.0 MPa. The oxidation of ammonia has been studied as a function of pH, and the main reaction products were determined. A synergistic effect is manifest in the platinum-rhodium bimetallic structure, in which the material has the greatest capacity to reduce ammonia. The reaction pathway linked the oxidizing ammonia to nitric oxide, nitrogen, and water.

  14. Effectiveness of immediate bonding of etch-and-rinse adhesives to simplified ethanol-saturated dentin.

    Science.gov (United States)

    Guimarães, Leandro Afonso; Almeida, Júlio César Franco; Wang, Linda; D'Alpino, Paulo Henrique Perlatti; Garcia, Fernanda Cristina Pimentel

    2012-01-01

    This study examined the immediate bond strength of etch-and-rinse adhesives to demineralized dentin saturated with either water or absolute ethanol. The research hypothesis was that there would be no difference in bond strength to dentin between water or ethanol wet-bonding techniques. The medium dentin of 20 third molars was exposed (n = 5). The dentin surface was then acid-etched, left moist and randomly assigned to be saturated via either water wet-bonding (WBT) or absolute ethanol wet-bonding (EBT). The specimens were then treated with one of the following etch-and-rinse adhesive systems: a 3-step, water-based system (Adper Scotchbond Multipurpose, or SBMP) or a 2-step, ethanol/water-based system (Adper Single Bond 2, or SB). Resin composite build-ups were then incrementally constructed. After water storage for 24 h at 37°C, the tensile strength of the specimens was tested in a universal testing machine (0.5 mm/min). Data were analyzed by two-way ANOVA and Tukey's test (a = 5%). The failure modes were verified using a stereomicroscope (40'). For both adhesives, no significant difference in bond strength was observed between WBT and EBT (p > 0.05). The highest bond strength was observed for SB, regardless of the bonding technique (p adhesives and bonding techniques was noticed (p = 0.597). There was a predominance of adhesive failures for all tested groups. The EBT and WBT displayed similar immediate bond strength means for both adhesives. The SB adhesive exhibited higher means for all conditions tested. Further investigations are needed to evaluate long-term bonding to dentin mediated by commercial etch-and-rinse adhesives using the EBT approach.

  15. Effectiveness of immediate bonding of etch-and-rinse adhesives to simplified ethanol-saturated dentin

    Directory of Open Access Journals (Sweden)

    Leandro Afonso Guimarães

    2012-04-01

    Full Text Available This study examined the immediate bond strength of etch-and-rinse adhesives to demineralized dentin saturated with either water or absolute ethanol. The research hypothesis was that there would be no difference in bond strength to dentin between water or ethanol wet-bonding techniques. The medium dentin of 20 third molars was exposed (n = 5. The dentin surface was then acid-etched, left moist and randomly assigned to be saturated via either water wet-bonding (WBT or absolute ethanol wet-bonding (EBT. The specimens were then treated with one of the following etch-and-rinse adhesive systems: a 3-step, water-based system (Adper Scotchbond Multipurpose, or SBMP or a 2-step, ethanol/water-based system (Adper Single Bond 2, or SB. Resin composite build-ups were then incrementally constructed. After water storage for 24 h at 37°C, the tensile strength of the specimens was tested in a universal testing machine (0.5 mm/min. Data were analyzed by two-way ANOVA and Tukey's test (a = 5%. The failure modes were verified using a stereomicroscope (40'. For both adhesives, no significant difference in bond strength was observed between WBT and EBT (p > 0.05. The highest bond strength was observed for SB, regardless of the bonding technique (p < 0.05. No significant interaction between adhesives and bonding techniques was noticed (p = 0.597. There was a predominance of adhesive failures for all tested groups. The EBT and WBT displayed similar immediate bond strength means for both adhesives. The SB adhesive exhibited higher means for all conditions tested. Further investigations are needed to evaluate long-term bonding to dentin mediated by commercial etch-and-rinse adhesives using the EBT approach.

  16. Microleakage assessment of fissure sealant following fissurotomy bur or pumice prophylaxis use before etching

    Directory of Open Access Journals (Sweden)

    Ali Bagherian

    2013-01-01

    The aim of this investigation was to compare the microleakage level of fissure sealants prepared by a fissurotomy bur or pumice prophylaxis prior to acid etching. Materials and Methods: Ninety freshly extracted healthy maxillary premolar teeth were randomly selected for this investigation. Teeth were then divided into three fissure sealant preparatory groups of A: Fissurotomy bur + acid etch; B: Pumice prophylaxis + acid etch and C: Acid etch alone. Sealant was applied to the occlusal fissures of all specimens using a plastic instrument. This was to avoid any air trap under the sealant. Sample teeth were first thermocycled (1000 cycles, 20 s dwell time and then coated with two layers of nail varnish leaving 2 mm around the sealant. This was then followed by immersion in basic fuchsin 3%. Processed teeth were sectioned longitudinally and examined under a stereomicroscope for microleakage assessment using a score of 0-3. Collected data was then subjected to Kruskall-Wallis Analysis of Variance and Mann-Whitney U-test. P < 0.05 was considered as significant. Results: Teeth in fissurotomy bur and pumice prophylaxis groups had significantly reduced level of microleakage than those in acid etch alone (P = 0.005 and P = 0.003, respectively. Conclusion: Use of fissurotomy bur and pumice prophylaxis accompanied with acid etching appears to have a more successful reduction of microleakage than acid etch alone.

  17. Nanoparticle-based etching of silicon surfaces

    Science.gov (United States)

    Branz, Howard [Boulder, CO; Duda, Anna [Denver, CO; Ginley, David S [Evergreen, CO; Yost, Vernon [Littleton, CO; Meier, Daniel [Atlanta, GA; Ward, James S [Golden, CO

    2011-12-13

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  18. Room temperature inductively coupled plasma etching of InAs/InSb in BCl 3/Cl 2/Ar

    KAUST Repository

    Sun, Jian

    2012-10-01

    Inductively coupled plasma (ICP) etching of InAs and InSb at room temperature has been investigated using BCl 3/Cl 2/Ar plasma. Specifically, the etch rate and post-etching surface morphology were investigated as functions of the gas composition, ICP power, process pressure, and RF chuck power. An optimized process has been developed, yielding anisotropic etching and very smooth surfaces with roughnesses of 0.25 nm for InAs, and 0.57 nm for InSb, which is comparable with the surface of epi-ready polished wafers. The process provides moderate etching rates of 820 /min for InAs and 2800 /min for InSb, and the micro-masking effect is largely avoided. © 2012 Elsevier B.V. All rights reserved.

  19. Matrix Factorisation Techniques for Endpoint Detection in Plasma Etching

    OpenAIRE

    Ragnoli, Emanuele; McLoone, Seamus; Ringwood, John; Macgerailt, N.

    2008-01-01

    Advanced data mining techniques such as variable selection through matrix factorization have been intensively applied in the last ten years in the area of plasma-etch point detection using optimal emission spectroscopy (OES). OES data sets are enormous, consisting of measurements of over 2000 wavelength recorded at sample rates of 1 - 3 Hertz, and consequently, these techniques are needed in order to generate compact representations of the relevant process characteristics. To date, the main t...

  20. Large area etching for porous semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Carstensen, J.; Christophersen, M.; Loelkes, S.; Ossei-Wusu, E.; Bahr, J.; Langa, S.; Popkirov, G.; Foell, H. [Faculty of Engineering, Christian-Albrechts-University of Kiel, 24143 Kiel (Germany)

    2005-06-01

    While electrochemical etching of small samples in the 1 cm region is relatively easy, this is not true for large areas, i.e. standard wafer sizes up to 300 mm. The paper outlines the specific demands and difficulties in some detail, discusses large area etching strategies and systems, in particular for very deep macropores, and presents and discusses various results from the large area etching system of the authors. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Dislocation Etching Solutions for Mercury Cadmium Selenide

    Science.gov (United States)

    2014-09-01

    mercury cadmium telluride (Hg1–xCdxTe) for infrared (IR) sensor applications, but etch pit density ( EPD ) measurements are required to measure...dislocations that affect device performance. No EPD solutions have been reported for Hg1–xCdxSe, and standard EPD solutions for Hg1–xCdxTe have proved...ineffective. Thus, a new etching solution is required for EPD measurements of Hg1–xCdxSe. Samples were etched in various solutions and the resulting pits

  2. Nanostructural effect of acid-etching and fluoride application on human primary and permanent tooth enamels

    Energy Technology Data Exchange (ETDEWEB)

    Cheong, Youjin [Department of Biomedical Engineering and Healthcare Industry Research Institute, College of Medicine, Kyung Hee University, Seoul (Korea, Republic of); Choi, Samjin [Department of Biomedical Engineering and Healthcare Industry Research Institute, College of Medicine, Kyung Hee University, Seoul (Korea, Republic of); Department of Orthodontics, College of Dental Medicine, Kyung Hee University, Seoul (Korea, Republic of); Kim, So Jung [Department of Pediatric Dentistry, College of Dental Medicine, Kyung Hee University, Seoul (Korea, Republic of); Park, Hun-Kuk, E-mail: sigmoidus@khu.ac.kr [Department of Biomedical Engineering and Healthcare Industry Research Institute, College of Medicine, Kyung Hee University, Seoul (Korea, Republic of); Program of Medical Engineering, Kyung Hee University, Seoul (Korea, Republic of)

    2012-07-01

    This study examined the nanostructural effects of fluoride application and the acid-etching time with respect to the time elapsed after fluoride application on the primary and permanent tooth enamel layers using atomic force microscopy (AFM) and scanning electron microscopy (SEM). 192 non-carious teeth were assigned to sixteen experimental groups (n = 12) including primary (1 to 8) and permanent (9 to 16) teeth, based on the timing of acid-etching with 37% phosphoric acid after an acidulated phosphate fluoride (APF) pre-treatment. The APF pre-treatment led to a decrease in surface roughness in both the primary and permanent teeth. After the APF treatment, the roughness in both primary and permanent teeth increased with the time elapsed. An acid-etching time of 40 s led to increased nanostructural changes in the enamel surfaces compared to the conventional acid-etching time of 20 s. This acid-etching process led to a higher roughness changes in the primary teeth than in the permanent teeth. To obtain proper enamel adhesion of a sealant after APF pre-treatment, it is important to apply acid-etching two weeks after pre-treatment. In addition, the acid-etching time should be prolonged to apply etching more quickly than two weeks, regardless of the primary and permanent teeth. Highlights: Black-Right-Pointing-Pointer APF pre-treatment led to decreased surface roughness in the enamel. Black-Right-Pointing-Pointer After APF treatment, the more roughness increased with increasing time elapsed. Black-Right-Pointing-Pointer Acid-etching should be performed two weeks after fluoride application.

  3. Localized mechanics of dentin self-etching adhesive system

    Directory of Open Access Journals (Sweden)

    Rodolfo Bruniera Anchieta

    2007-08-01

    Full Text Available The bond strength of composite resins (CRs to dentin is influenced by the interfacial microstructure of the hybrid layer (HL and the resin tags (TAG. The contemporary self-etching primer adhesive systems overcame the inconvenient of the etch-and-rinse protocol. Studies, however, have demonstrated that HL thickness and TAG length vary according to the wetting time and additional use of acid-etching prior to self-etching primers. This study investigated the localized stress distribution in the HL and the dentin/adhesive interface. Two HL thicknesses (3 or 6 µm, two TAG lengths (13 or 17 µm and two loading conditions (perpendicular and oblique-25º were investigated by the finite element (FE analysis. Five two-dimensional FE models (M of a dentin specimen restored with CR (38 x 64 µm were constructed: M1 - no HL and no TAG; M2 - 3 µm of HL and 13 µm of TAG; M3 - 3 µm of HL and 17 µm of TAG; M4 - 6 µm of HL and 13 µm of TAG; and M5 - 6 µm of HL and 17 µm of TAG. Two distributed loadings (L (20N were applied on CR surface: L1 - perpendicular, and L2 - oblique (25º. Fixed interfacial conditions were assigned on the border of the dentin specimen. Ansys 10.0 (Ansys®, Houston, PA, USA software was used to calculate the stress fields. The peak of von Mises (sigmavM and maximum principal stress (sigmamax was higher in L2 than in L1. Microstructures (HL and TAG had no effect on local stresses for L1. Decreasing HL decreased sigmavM and sigmamax in all structures for L2, but the TAG length had influence only on the peributular dentin. The thickness of HL had more influence on the sigmavM and sigmamax than TAG length. The peritubular dentin and its adjacent structures showed the highest sigmavM and sigmamax, mainly in the oblique loading.

  4. Overview of atomic layer etching in the semiconductor industry

    Energy Technology Data Exchange (ETDEWEB)

    Kanarik, Keren J., E-mail: keren.kanarik@lamresearch.com; Lill, Thorsten; Hudson, Eric A.; Sriraman, Saravanapriyan; Tan, Samantha; Marks, Jeffrey; Vahedi, Vahid; Gottscho, Richard A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

    2015-03-15

    Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.

  5. WET SOLIDS FLOW ENHANCEMENT

    Energy Technology Data Exchange (ETDEWEB)

    Unknown

    2001-03-25

    The yield locus, tensile strength and fracture mechanisms of wet granular materials were studied. The yield locus of a wet material was shifted to the left of that of the dry specimen by a constant value equal to the compressive isostatic stress due to pendular bridges. for materials with straight yield loci, the shift was computed from the uniaxial tensile strength, either measured in a tensile strength tester or calculated from the correlation, and the angle of internal friction of the material. The predicted shift in the yield loci due to different moisture contents compare well with the measured shift in the yield loci of glass beads, crushed limestone, super D catalyst and Leslie coal. Measurement of the void fraction during the shear testing was critical to obtain the correct tensile strength theoretically or experimentally.

  6. Study of wet-chemically-prepared hydrogen-terminated silicon (111) surfaces and a novel implementation of a high-resolution interferometer

    Science.gov (United States)

    Zhou, Hui

    This thesis summarizes my graduate study under the National Institute of Standards and Technology (NIST) Atom-Based Dimensional Metrology Project, in which we are developing methods for measuring sub-micrometer dimensions including directly counting atom spacings on a silicon-surface lattice. Atomically flat, hydrogen-terminated Si(111) surfaces are prepared using wet chemistry. The surface morphology after the wet-chemistry preparation was found to be dependent on both the initial etching time and wafer miscut. These two factors have been neglected in literature. To produce a morphology of uniform, long-range steps and terraces, the miscut angle has to be larger than a certain angle. The development and dynamics of the surface morphology was explained by preferential etching. A kinetic Monte-Carlo simulation was used to quantitatively study some of the key aspects of the surface-morphology evolution, such as step flow, pit expansion, and step-pit collision. The hydrogen-terminated silicon surfaces prepared using wet-chemical etching method were used as substrates to create nanometer-scale patterns using a scanning tunneling microscope (STM)-probe-induced surface modification in both ultra-high vacuum (UHV) and low-vacuum environments. Patterns created in UHV have linewidths below 10 nm, while patterns created in low vacuum had a minimum linewidth of nominally 20 nm. The pattern created in a low vacuum environment was further processed using SF6 reactive-ion etching, resulting in patterns whose aspect ratio had increased more than 5 times. To enable accurate measurement of atom spacings, a Michelson interferometer of novel design was implemented in this research, based on the principle that during operation, the interference-fringe signal is locked at a zero point by tuning the laser frequency, thus transferring the displacement measurement into a laser-frequency measurement and greatly increasing the measurement resolution. The interferometer is designed to be

  7. Wetting in Color

    OpenAIRE

    Burgess, Ian Bruce

    2012-01-01

    Colorimetric litmus tests such as pH paper have enjoyed wide commercial success due to their inexpensive production and exceptional ease of use. However, expansion of colorimetry to new sensing paradigms is challenging because macroscopic color changes are seldom coupled to arbitrary differences in the physical/chemical properties of a system. In this thesis I present in detail the development of Wetting in Color Technology, focusing primarily on its application as an inexpensive and highly...

  8. Device processing of wide bandgap semiconductors - challenges and directions

    Energy Technology Data Exchange (ETDEWEB)

    Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Shul, R.J.; Zolper, J.C. [Sandia National Labs., Albuquerque, NM (United States)] [and others

    1997-10-01

    The wide gap materials SiC, GaN and to a lesser extent diamond are attracting great interest for high power/high temperature electronics. There are a host of device processing challenges presented by these materials because of their physical and chemical stability, including difficulty in achieving stable, low contact resistances, especially for one conductivity type, absence of convenient wet etch recipes, generally slow dry etch rates, the high temperatures needed for implant activation, control of suitable gate dielectrics and the lack of cheap, large diameter conducting and semi-insulating substrates. The relatively deep ionization levels of some of the common dopants (Mg, in GaN; B, Al in SiC; P in diamond) means that carrier densities may be low at room temperature even if the impurity is electrically active - this problem will be reduced at elevated temperature, and thus contact resistances will be greatly improved provided the metallization is stable and reliable. Some recent work with CoSi{sub x} on SiC and W-alloys on GaN show promise for improved ohmic contacts. The issue of unintentional hydrogen passivation of dopants will also be covered - this leads to strong increases in resistivity of p-SiC and GaN, but to large decreases in resistivity of diamond. Recent work on development of wet etches has found recipes for AlN (KOH), while photochemical etching of SiC and GaN has been reported. In the latter cases p-type materials is not etched, which can be a major liability in some devices. The dry etch results obtained with various novel reactors, including ICP, ECR and LE4 will be compared - the high ion densities in the former techniques produce the highest etch rates for strongly-bonded materials, but can lead to preferential loss of N from the nitrides and therefore to a highly conducting surface. This is potentially a major problem for fabrication of dry etched, recessed gate FET structures.

  9. Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching.

    Science.gov (United States)

    Kong, Lingyu; Song, Yi; Kim, Jeong Dong; Yu, Lan; Wasserman, Daniel; Chim, Wai Kin; Chiam, Sing Yang; Li, Xiuling

    2017-10-24

    Producing densely packed high aspect ratio In0.53Ga0.47As nanostructures without surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices. However, conventional dry etching methods are known to produce irreversible damage to III-V compound semiconductors because of the inherent high-energy ion-driven process. In this work, we demonstrate the realization of ordered, uniform, array-based In0.53Ga0.47As pillars with diameters as small as 200 nm using the damage-free metal-assisted chemical etching (MacEtch) technology combined with the post-MacEtch digital etching smoothing. The etching mechanism of InxGa1-xAs is explored through the characterization of pillar morphology and porosity as a function of etching condition and indium composition. The etching behavior of In0.53Ga0.47As, in contrast to higher bandgap semiconductors (e.g., Si or GaAs), can be interpreted by a Schottky barrier height model that dictates the etching mechanism constantly in the mass transport limited regime because of the low barrier height. A broader impact of this work relates to the complete elimination of surface roughness or porosity related defects, which can be prevalent byproducts of MacEtch, by post-MacEtch digital etching. Side-by-side comparison of the midgap interface state density and flat-band capacitance hysteresis of both the unprocessed planar and MacEtched pillar In0.53Ga0.47As metal-oxide-semiconductor capacitors further confirms that the surface of the resultant pillars is as smooth and defect-free as before etching. MacEtch combined with digital etching offers a simple, room-temperature, and low-cost method for the formation of high-quality In0.53Ga0.47As nanostructures that will potentially enable large-volume production of In0.53Ga0.47As-based devices including three-dimensional transistors and high-efficiency infrared photodetectors.

  10. Deep reactive ion etching of commercial PMMA in O2/CHF3, and O2/Ar-based discharges

    Science.gov (United States)

    Zhang, Congchun; Yang, Chunsheng; Ding, Duifu

    2004-05-01

    The reactive ion etching of PMMA in O2, O2/CHF3 and O2/Ar discharges has been examined as a function of bias voltage, flow rate and composition of the gas mixtures. Etching in O2, O2/CHF3 and O2/Ar plasmas (with a flow ratio of Ar/O2 leq 50%) shows higher ion-enhanced chemical etching dependence than in O2/Ar (with a flow ratio of Ar/O2 geq 50%). In Ar/O2 plasmas, with an increasing proportion of Ar, the dominant process changed from an ion-enhanced chemical process with high values of etch rate to a physical sputtering etch process. PMMA etched in O2 (10 sccm)/Ar (40 sccm) produced a smooth and vertical sidewall. With an increasing amount of CHF3, the etch rates of PMMA show a larger dependence on physical sputtering and a gradual decrease. When the depth of PMMA etched in O2 (25 sccm)/CHF3 (25 sccm) is about 100 µm the profile is vertical, but the sidewall surface is rough.

  11. Investigation near IR absorption in thin crystalline Si wafers with randomly etched nano-pillars

    Science.gov (United States)

    Nasir, Nurfarizza Surhada Mohd; Sinin, Nurul Aqidah Mohd; Sepeai, Suhaila; Leong, Cheow Siu; Sopian, Kamaruzzaman; Zaidi, Saleem H.

    2017-05-01

    Significant research has been focused on optimizing efficiency of crystalline silicon solar cells with nanostructured surfaces. Light absorption is greatly enhanced by light trapping in nanostructures. The main focus of research work presented here is to enhance the broadband light absorption in randomly etched nano-pillar textures. The nano-pillars were formed through metal-assisted chemical etching (MACE) process with silver nanoparticles serving as the etch masks. Uniformly distributed nano-pillars (SiNPs) were fabricated using single step etch process. Nano-pillars were fabricated on thin (˜ 150 µm) c-Si substrates by immersion into an aqueous solution of HF, AgNO3, and H2O2. The nano-pillars morphology and optical response were characterized with Scanning Electron Microscope (SEM), Atomic Force Microscopy (AFM), and near IR transmission. The performance of growth nano-pillars on as-cut (without saw damage removal process) and planar substrate (with saw damage removed) was evaluated. Typical dimensions of the vertically-etched anisotropic Si nano-pillars were diameter ˜ 80-250 nm, depth ˜ 500-1000 nm, and separation ˜ 300-500 nm for etching times in 5 and 20 minutes range. Such nano-pillars exhibit almost zero reflection and are expected to enhance efficiency of the solar cell.

  12. Effect of phosphoric acid etching on the shear bond strength of two self-etch adhesives

    Science.gov (United States)

    SABATINI, Camila

    2013-01-01

    Objective: To evaluate the effect of optional phosphoric acid etching on the shear bond strength (SBS) of two self-etch adhesives to enamel and dentin. Material and Methods: Ninety-six bovine mandibular incisors were ground flat to obtain enamel and dentin substrates. A two-step self-etch adhesive (FL-Bond II) and a one-step self-etch adhesive (BeautiBond) were applied with and without a preliminary acid etching to both the enamel and dentin. The specimens were equally and randomly assigned to 4 groups per substrate (n=12) as follows: FL-Bond II etched; FL-Bond II un-etched; BeautiBond etched; BeautiBond un-etched. Composite cylinders (Filtek Z100) were bonded onto the treated tooth structure. The shear bond strength was evaluated after 24 hours of storage (37ºC, 100% humidity) with a testing machine (Ultra-tester) at a speed of 1 mm/min. The data was analyzed using a two-way ANOVA and post-hoc Tukey's test with a significance level of padhesives evidenced a significant decrease in the dentin SBS with the use of an optional phosphoric acid-etching step (pself-etch adhesives evaluated while providing improvement on the enamel bond strength only for FL-Bond II. This suggests that the potential benefit that may be derived from an additional etching step with phosphoric acid does not justify the risk of adversely affecting the bond strength to dentin. PMID:23559113

  13. Effect of phosphoric acid etching on the shear bond strength of two self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Camila SABATINI

    2013-01-01

    Full Text Available Objective To evaluate the effect of optional phosphoric acid etching on the shear bond strength (SBS of two self-etch adhesives to enamel and dentin. Material and Methods Ninety-six bovine mandibular incisors were ground flat to obtain enamel and dentin substrates. A two-step self-etch adhesive (FL-Bond II and a one-step self-etch adhesive (BeautiBond were applied with and without a preliminary acid etching to both the enamel and dentin. The specimens were equally and randomly assigned to 4 groups per substrate (n=12 as follows: FL-Bond II etched; FL-Bond II un-etched; BeautiBond etched; BeautiBond un-etched. Composite cylinders (Filtek Z100 were bonded onto the treated tooth structure. The shear bond strength was evaluated after 24 hours of storage (37°C, 100% humidity with a testing machine (Ultra-tester at a speed of 1 mm/min. The data was analyzed using a two-way ANOVA and post-hoc Tukey's test with a significance level of p<0.05. A field emission scanning electron microscope was used for the failure mode analysis. Results Both adhesives evidenced a significant decrease in the dentin SBS with the use of an optional phosphoric acid-etching step (p<0.05. Preliminary phosphoric acid etching yielded significantly higher enamel SBS for FL-Bond II (p<0.05 only, but not for BeautiBond. FL-Bond II applied to un-etched dentin demonstrated the highest mean bond strength (37.7±3.2 MPa and BeautiBond applied to etched dentin showed the lowest mean bond strength (18.3±6.7 MPa among all tested groups (p<0.05. Conclusion The use of a preliminary acid-etching step with 37.5% phosphoric acid had a significant adverse effect on the dentin bond strength of the self-etch adhesives evaluated while providing improvement on the enamel bond strength only for FL-Bond II. This suggests that the potential benefit that may be derived from an additional etching step with phosphoric acid does not justify the risk of adversely affecting the bond strength to dentin.

  14. A self-limiting layer-by-layer etching technique for 2H-MoS2

    Science.gov (United States)

    Lee, Choong Hee; Lee, Edwin W., II; McCulloch, William; Jamal-Eddine, Zane; Krishnamoorthy, Sriram; Newburger, Michael J.; Kawakami, Roland K.; Wu, Yiying; Rajan, Siddharth

    2017-03-01

    We report controlled layer-by-layer removal of large-area, sulfurized, single-crystal molybdenum disulfide (MoS2) films using a digital etching technique, which utilizes oxidation and removal of the oxidized layer. We demonstrate a self-limiting oxidation process where Mo oxide covered the surface of MoS2. A constant etching rate of one monolayer/cycle and the uniformity of the etching process were also verified. We show that the etching of an integer number of MoS2 layers can be precisely controlled. No noticeable film quality degradation was observed after multiple cycles of digital etching, as confirmed by Raman mapping of the ratio of the \\text{E}\\text{2g}1 and A1g peak intensities.

  15. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  16. Overcoming etch challenges related to EUV based patterning (Conference Presentation)

    Science.gov (United States)

    Metz, Andrew W.; Cottle, Hongyun; Honda, Masanobu; Morikita, Shinya; Kumar, Kaushik A.; Biolsi, Peter

    2017-04-01

    Research and development activities related to Extreme Ultra Violet [EUV] defined patterning continue to grow for plasma etch trade-offs related to traditional approaches of PR smoothing, descum implementation and maintaining 2D aspect ratios of short lines or elliptical contacts concurrent with ultra-high photo resist [PR] selectivity. In this paper we will discuss sources of LER/LWR, impact of material choice, integration, and innovative plasma process techniques and describe how TELTM VigusTM CCP Etchers can enhance PR selectivity, reduce LER/LWR, and maintain 2D aspect ratio of incoming patterns. Beyond traditional process approaches this paper will show the utility of: [1] DC Superposition in enhancing EUV resist hardening and selectivity, increasing resistance to stress induced PR line wiggle caused by CFx passivation, and mitigating organic planarizer wiggle; [2] Quasi Atomic Layer Etch [Q-ALE] for ARC open eliminating the tradeoffs between selectivity, CD, and shrink ratio control; and [3] ALD+Etch FUSION technology for feature independent CD shrink and LER reduction. Applicability of these concepts back transferred to 193i based lithography is also confirmed.

  17. Chemical-Mechanical Lift-Off Process for InGaN Epitaxial Layers

    Science.gov (United States)

    Lin, Ming-Shiou; Lin, Chia-Feng; Huang, Wan-Chun; Wang, Guei-Miao; Shieh, Bing-Cheng; Dai, Jing-Jie; Chang, Shou-Yi; Wuu, D. S.; Liu, Po-Liang; Horng, Ray-Hua

    2011-06-01

    An InGaN-based light-emitting diode (LED) structure was separated from a GaN/sapphire structure by inserting sacrificial Si-doped InGaN/GaN superlattice layers through a chemical-mechanical lift-off (CMLO) process. The CMLO process consisted of a band-gap-selective photoelectrochemical lateral wet etching process and a mechanical lift-off process. A lower elastic modulus and hardness of the lateral-etched LED structure were measured compared with the conventional LED structure, which indicated a weak mechanical property of the treated LED structure. The photoluminescence blue-shift phenomenon and the Raman redshift phenomenon indicated that the compressive strain from the bottom GaN/sapphire structure was released through the CMLO process.

  18. Influence of Si wafer thinning processes on (sub)surface defects

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, Fumihiro, E-mail: fumihiro.inoue@imec.be [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Jourdain, Anne; Peng, Lan; Phommahaxay, Alain; De Vos, Joeri; Rebibis, Kenneth June; Miller, Andy; Sleeckx, Erik; Beyne, Eric [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Uedono, Akira [Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

    2017-05-15

    Highlights: • Mono-vacancy free Si-thinning can be accomplished by combining several thinning techniques. • The grinding damage needs to be removed prior to dry etching, otherwise vacancies remain in the Si at a depth around 0.5 to 2 μm after Si wafer thickness below 5 μm. • The surface of grinding + CMP + dry etching is equivalent mono vacancy level as that of grinding + CMP. - Abstract: Wafer-to-wafer three-dimensional (3D) integration with minimal Si thickness can produce interacting multiple devices with significantly scaled vertical interconnections. Realizing such a thin 3D structure, however, depends critically on the surface and subsurface of the remaining backside Si after the thinning processes. The Si (sub)surface after mechanical grinding has already been characterized fruitfully for a range of few dozen of μm. Here, we expand the characterization of Si (sub)surface to 5 μm thickness after thinning process on dielectric bonded wafers. The subsurface defects and damage layer were investigated after grinding, chemical mechanical polishing (CMP), wet etching and plasma dry etching. The (sub)surface defects were characterized using transmission microscopy, atomic force microscopy, and positron annihilation spectroscopy. Although grinding provides the fastest removal rate of Si, the surface roughness was not compatible with subsequent processing. Furthermore, mechanical damage such as dislocations and amorphous Si cannot be reduced regardless of Si thickness and thin wafer handling systems. The CMP after grinding showed excellent performance to remove this grinding damage, even though the removal amount is 1 μm. For the case of Si thinning towards 5 μm using grinding and CMP, the (sub)surface is atomic scale of roughness without vacancy. For the case of grinding + dry etch, vacancy defects were detected in subsurface around 0.5–2 μm. The finished surface after wet etch remains in the nm scale in the strain region. By inserting a CMP step in

  19. Chemical Effect of Dry and Wet Cleaning of the Ru Protective Layer of the Extreme ultraviolet (EUV) Lithography Reflector

    Energy Technology Data Exchange (ETDEWEB)

    Belau, Leonid; Park, Jeong Y.; Liang, Ted; Seo, Hyungtak; Somorjai, Gabor A.

    2009-04-10

    The authors report the chemical influence of cleaning of the Ru capping layer on the extreme ultraviolet (EUV) reflector surface. The cleaning of EUV reflector to remove the contamination particles has two requirements: to prevent corrosion and etching of the reflector surface and to maintain the reflectivity functionality of the reflector after the corrosive cleaning processes. Two main approaches for EUV reflector cleaning, wet chemical treatments [sulfuric acid and hydrogen peroxide mixture (SPM), ozonated water, and ozonated hydrogen peroxide] and dry cleaning (oxygen plasma and UV/ozone treatment), were tested. The changes in surface morphology and roughness were characterized using scanning electron microscopy and atomic force microscopy, while the surface etching and change of oxidation states were probed with x-ray photoelectron spectroscopy. Significant surface oxidation of the Ru capping layer was observed after oxygen plasma and UV/ozone treatment, while the oxidation is unnoticeable after SPM treatment. Based on these surface studies, the authors found that SPM treatment exhibits the minimal corrosive interactions with Ru capping layer. They address the molecular mechanism of corrosive gas and liquid-phase chemical interaction with the surface of Ru capping layer on the EUV reflector.

  20. Development of a Silicon Microneedle with Three-Dimensional Sharp Tip by Electrochemical Etching

    Science.gov (United States)

    Izumi, Hayato; Okamoto, Tokusuke; Suzuki, Masato; Aoyagi, Seiji

    Aiming at the use in low-invasive medical treatments, this paper reports a fabrication technique of silicon microneedle of conical sharp point. The electrochemical etching technique is employed for sharpening the tip of a pillar, which is diced from a silicon wafer. A finely smooth tip surface is obtained due to electrochemical etching reactions, and is effective for easy insertion. The fabrication method is based on inexpensive wet etching, which does not require expensive fabrication facilities such as deep reactive ion etching (DRIE). A sharp needle was successfully fabricated, the tip angle of which was considerably small and was distributed within the range from 15 to 30 deg. An experiment of inserting the fabricated needle into an artificial skin of silicone rubber was carried out. As the results, the resistance force during insertion was much reduced compared to those of two-dimensional sharp needles. Imitating mosquito's motion, the effectiveness of applying vibration to the fabricated needle during insertion was also confirmed. After biocompatible Parylene coating, puncturing a human skin was demonstrated assuming a lancet usage for the diabetics, in which the bleeding was surely observed.

  1. Degradation process analysis of the azo dyes by catalytic wet air oxidation with catalyst CuO/γ-Al2O3.

    Science.gov (United States)

    Hua, Li; Ma, Hongrui; Zhang, Lei

    2013-01-01

    Three azo dyes (Methyl Orange, Direct Brown and Direct Green) were treated by catalytic wet air oxidation (CWAO) with the catalysts CuO/γ-Al(2)O(3) prepared by consecutive impregnation. The relationship of decolorization extent, chemical oxygen demand (COD) removal extent and total organic carbon (TOC) in dye solution were investigated. The results indicated that the CuO/γ-Al(2)O(3) catalyst had excellent catalytic activity in treating azo dyes. Almost 99% of color and 70% of TOC were removed in 2h. The high removal extent of color and TOC indicated that the CWAO obtained perfect decomposition for pollutants. The degradation pathway of azo dyes was analyzed by UV-Vis, FTIR and MS. According to the examined results, the hydroxyl ((·)OH) radicals induced strong oxidizing effects in the target solution and destroyed the chromophoric groups of azo-benzene conjugated of the molecular structure. Considering characteristics of the dye structure, the azo bond (-N=N-) would first be attacked by the hydroxyl radical and other free radicals. With the continuous oxidization and the long reaction time at high temperature, these intermediates could be oxidized to the final oxidation products, such as water and carbon dioxide. Copyright © 2012 Elsevier Ltd. All rights reserved.

  2. Sustainable High Quality Recycling of Aggregates from Waste-to-Energy, Treated in a Wet Bottom Ash Processing Installation, for Use in Concrete Products

    Directory of Open Access Journals (Sweden)

    Philip Van den Heede

    2015-12-01

    Full Text Available Nowadays, more efforts towards sustainability are required from the concrete industry. Replacing traditional aggregates by recycled bottom ash (BA from municipal solid waste incineration can contribute to this goal. Until now, only partial replacement has been considered to keep the concrete workability, strength and durability under control. In this research, the feasibility of a full aggregate replacement was investigated for producing prefabricated Lego bricks. It was found that the required compressive strength class for this purpose (C20/25 could be achieved. Nevertheless, a thorough understanding of the BA properties is needed to overcome other issues. As BA is highly absorptive, the concrete’s water demand is high. This workability issue can be dealt with by subjecting the fine BA fraction to a crushing operation to eliminate the porous elements and by pre-wetting the fine and coarse BA fractions in a controlled manner. In addition, a reactive NaOH washing is needed to avoid formation of longitudinal voids and the resulting expansion due to the metallic aluminum present in the BA. Regarding the long-term behavior, heavy metal leaching and freeze-thaw exposure are not problematic, though there is susceptibility to acetic and lactic acid attack and maybe increased sensitivity to alkali-silica reaction.

  3. Additives affecting properties of β-Li{sub 2}TiO{sub 3} pebbles in a modified indirect wet chemistry process

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Cheng-Long, E-mail: johnyucl@aliyun.com [School of Materials Science and Engineering, Shaanxi University of Science & Technology, Xi' an 710021 (China); Research Laboratory of Hydrothermal Chemistry, Faculty of Science, The Kochi University, Kochi 780-8520 (Japan); Liu, Wei; Yang, Long-Tao; Wang, Dao-Yi; Wu, Kang [School of Materials Science and Engineering, Shaanxi University of Science & Technology, Xi' an 710021 (China); Zhang, Zeng-Ping [Key Laboratory for Special Area Highway Engineering of Ministry of Education, Chang' an University, Xi' an 710064 (China); Wang, Xiu-Feng [School of Materials Science and Engineering, Shaanxi University of Science & Technology, Xi' an 710021 (China); Yanagisawa, Kazumichi [Research Laboratory of Hydrothermal Chemistry, Faculty of Science, The Kochi University, Kochi 780-8520 (Japan)

    2016-11-15

    Lithium metatitanate (β-Li{sub 2}TiO{sub 3}) pebbles were fabricated via the modified indirect wet chemistry method. Effect of varied additives, as polyvinyl alcohol, glycerol, and agar on the properties evolution was investigated. The highest density is obtained by adding 2 wt% (weight percent) polyvinyl alcohol, 3 wt% glycerol, and 3 wt% agar, respectively. β-Li{sub 2}TiO{sub 3} pebbles with relative sintered density of 92.4%T.D. (Theoretical Density), the ratio of the intensity of diffraction peak (002) to that of (−133) of about 2.93, about 1.58 mm in diameter, a better sphericity of 1.02, the particle size of 5–6 μm, and the well-developed surface layered structure are successfully fabricated with 3 wt% glycerol. Glycerol is beneficial to improving the properties by other fabrication method as well. - Highlights: • Polyvinyl alcohol, glycerol, and agar were used to prepare β-Li{sub 2}TiO{sub 3} pebbles. • Properties of the β-Li{sub 2}TiO{sub 3} pebbles were governed by the additives. • Glycerol is beneficial to improving the properties of β-Li{sub 2}TiO{sub 3} pebbles.

  4. Sustainable High Quality Recycling of Aggregates from Waste-to-Energy, Treated in a Wet Bottom Ash Processing Installation, for Use in Concrete Products

    Science.gov (United States)

    Van den Heede, Philip; Ringoot, Niels; Beirnaert, Arno; Van Brecht, Andres; Van den Brande, Erwin; De Schutter, Geert; De Belie, Nele

    2015-01-01

    Nowadays, more efforts towards sustainability are required from the concrete industry. Replacing traditional aggregates by recycled bottom ash (BA) from municipal solid waste incineration can contribute to this goal. Until now, only partial replacement has been considered to keep the concrete workability, strength and durability under control. In this research, the feasibility of a full aggregate replacement was investigated for producing prefabricated Lego bricks. It was found that the required compressive strength class for this purpose (C20/25) could be achieved. Nevertheless, a thorough understanding of the BA properties is needed to overcome other issues. As BA is highly absorptive, the concrete’s water demand is high. This workability issue can be dealt with by subjecting the fine BA fraction to a crushing operation to eliminate the porous elements and by pre-wetting the fine and coarse BA fractions in a controlled manner. In addition, a reactive NaOH washing is needed to avoid formation of longitudinal voids and the resulting expansion due to the metallic aluminum present in the BA. Regarding the long-term behavior, heavy metal leaching and freeze-thaw exposure are not problematic, though there is susceptibility to acetic and lactic acid attack and maybe increased sensitivity to alkali-silica reaction. PMID:28787809

  5. Sustainable High Quality Recycling of Aggregates from Waste-to-Energy, Treated in a Wet Bottom Ash Processing Installation, for Use in Concrete Products.

    Science.gov (United States)

    Van den Heede, Philip; Ringoot, Niels; Beirnaert, Arno; Van Brecht, Andres; Van den Brande, Erwin; De Schutter, Geert; De Belie, Nele

    2015-12-25

    Nowadays, more efforts towards sustainability are required from the concrete industry. Replacing traditional aggregates by recycled bottom ash (BA) from municipal solid waste incineration can contribute to this goal. Until now, only partial replacement has been considered to keep the concrete workability, strength and durability under control. In this research, the feasibility of a full aggregate replacement was investigated for producing prefabricated Lego bricks. It was found that the required compressive strength class for this purpose (C20/25) could be achieved. Nevertheless, a thorough understanding of the BA properties is needed to overcome other issues. As BA is highly absorptive, the concrete's water demand is high. This workability issue can be dealt with by subjecting the fine BA fraction to a crushing operation to eliminate the porous elements and by pre-wetting the fine and coarse BA fractions in a controlled manner. In addition, a reactive NaOH washing is needed to avoid formation of longitudinal voids and the resulting expansion due to the metallic aluminum present in the BA. Regarding the long-term behavior, heavy metal leaching and freeze-thaw exposure are not problematic, though there is susceptibility to acetic and lactic acid attack and maybe increased sensitivity to alkali-silica reaction.

  6. Influence of block copolymer feature size on reactive ion etching pattern transfer into silicon

    Science.gov (United States)

    Dialameh, M.; Ferrarese Lupi, F.; Imbraguglio, D.; Zanenga, F.; Lamperti, A.; Martella, D.; Seguini, G.; Perego, M.; Rossi, A. M.; De Leo, N.; Boarino, L.

    2017-10-01

    A successful realisation of sub-20 nm features on silicon (Si) is becoming the focus of many technological studies, strongly influencing the future performance of modern integrated circuits. Although reactive ion etching (RIE), at both micrometric and nanometric scale has already been the target of many studies, a better understanding of the different mechanisms involved at sub-20 nm size etching is still required. In this work, we investigated the influence of the feature size on the etch rate of Si, performed by a cryogenic RIE process through cylinder-forming polystyrene-block-polymethylmethacrylate (PS-b-PMMA) diblock copolymer (DBC) masks with diameter ranging between 19-13 nm. A sensible decrease of the etch depth and etch rate was observed in the mask with the smallest feature size. For all the DBCs under investigation, we determined the process window useful for the correct transfer of the nanometric cylindrical pattern into a Si substrate. A structural and physicochemical investigation of the resulting nanostructured Si is reported in order to delineate the influence of various RIE pattern effects. Feature-size-dependent etch, or RIE-lag, is proved to significantly affect the obtained results.

  7. Separated Type Atmospheric Pressure Plasma Microjets Array for Maskless Microscale Etching

    Directory of Open Access Journals (Sweden)

    Yichuan Dai

    2017-06-01

    Full Text Available Maskless etching approaches such as microdischarges and atmospheric pressure plasma jets (APPJs have been studied recently. Nonetheless, a simple, long lifetime, and efficient maskless etching method is still a challenge. In this work, a separated type maskless etching system based on atmospheric pressure He/O2 plasma jet and microfabricated Micro Electro Mechanical Systems (MEMS nozzle have been developed with advantages of simple-structure, flexibility, and parallel processing capacity. The plasma was generated in the glass tube, forming the micron level plasma jet between the nozzle and the surface of polymer. The plasma microjet was capable of removing photoresist without masks since it contains oxygen reactive species verified by spectra measurement. The experimental results illustrated that different features of microholes etched by plasma microjet could be achieved by controlling the distance between the nozzle and the substrate, additive oxygen ratio, and etch time, the result of which is consistent with the analysis result of plasma spectra. In addition, a parallel etching process was also realized by plasma microjets array.

  8. Studies of the confinement at laser-induced backside dry etching using infrared nanosecond laser pulses

    Science.gov (United States)

    Ehrhardt, M.; Lorenz, P.; Bayer, L.; Han, B.; Zimmer, K.

    2018-01-01

    In the present study, laser-induced backside etching of SiO2 at an interface to an organic material using laser pulses with a wavelength of λ = 1064 nm and a pulse length of τ = 7 ns have been performed in order to investigate selected processes involved in etching of the SiO2 at confined ablation conditions with wavelengths well below the band gap of SiO2. Therefore, in between the utilized metallic absorber layer and the SiO2 surface, a polymer interlayer with a thickness between 20 nm to 150 nm was placed with the aim, to separate the laser absorption process in the metallic absorber layer from the etching process of the SiO2 surface due to the provided organic interlayer. The influence of the confinement of the backside etching process was analyzed by the deposition of different thick polymer layers on top of the metallic absorber layer. In particular, it was found that the SiO2 etching depth decreases with higher polymer interlayer thickness. However, the etching depth increases with increasing the confinement layer thickness. SEM images of the laser processed areas show that the absorber and confinement layers are ruptured from the sample surface without showing melting, and suggesting a lift off process of these films. The driving force for the layers lift off and the etching of the SiO2 is probably the generated laser-induce plasma from the confined ablation that provides the pressure for lift off, the high temperatures and reactive organic species that can chemically attack the SiO2 surface at these conditions.

  9. Effect of simplified ethanol-wet bonding on microtensile bond strengths of dentin adhesive agents with different solvents

    Directory of Open Access Journals (Sweden)

    Muhammet Kerim Ayar

    2015-09-01

    Conclusion: Simplified ethanol-wet bonding exhibited similar 24-hour bond strength mean values for both ethanol/water-based and acetone-based etch-and-rinse adhesives. Therefore, solvent content may not interfere with bond strength to ethanol-saturated dentin.

  10. Wetting in Color

    Science.gov (United States)

    Burgess, Ian Bruce

    Colorimetric litmus tests such as pH paper have enjoyed wide commercial success due to their inexpensive production and exceptional ease of use. However, expansion of colorimetry to new sensing paradigms is challenging because macroscopic color changes are seldom coupled to arbitrary differences in the physical/chemical properties of a system. In this thesis I present in detail the development of Wetting in Color Technology, focusing primarily on its application as an inexpensive and highly selective colorimetric indicator for organic liquids. The technology exploits chemically-encoded inverse-opal photonic crystals to control the infiltration of fluids to liquid-specific spatial patterns, projecting minute differences in liquids' wettability to macroscopically distinct, easy-to-visualize structural color patterns. It is shown experimentally and corroborated with theoretical modeling using percolation theory that the high selectivity of wetting, upon-which the sensitivity of the indicator relies, is caused by the highly symmetric structure of our large-area, defect-free SiO2 inverse-opals. The regular structure also produces a bright iridescent color, which disappears when infiltrated with liquid - naturally coupling the optical and fluidic responses. Surface modification protocols are developed, requiring only silanization and selective oxidation, to facilitate the deterministic design of an indicator that differentiates a broad range of liquids. The resulting tunable, built-in horizontal and vertical chemistry gradients allow the wettability threshold to be tailored to specific liquids across a continuous range, and make the readout rely only on countable color differences. As wetting is a generic fluidic phenomenon, Wetting in Color technology could be suitable for applications in authentication or identification of unknown liquids across a broad range of industries. However, the generic nature of the response also ensures chemical non-specificity. It is shown

  11. Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process

    Science.gov (United States)

    González, D.; Braza, V.; Utrilla, A. D.; Gonzalo, A.; Reyes, D. F.; Ben, T.; Guzman, A.; Hierro, A.; Ulloa, J. M.

    2017-10-01

    A procedure to quantitatively analyse the relationship between the wetting layer (WL) and the quantum dots (QDs) as a whole in a statistical way is proposed. As we will show in the manuscript, it allows determining, not only the proportion of deposited InAs held in the WL, but also the average In content inside the QDs. First, the amount of InAs deposited is measured for calibration in three different WL structures without QDs by two methodologies: strain mappings in high-resolution transmission electron microscopy images and compositional mappings with ChemiSTEM x-ray energy spectrometry. The area under the average profiles obtained by both methodologies emerges as the best parameter to quantify the amount of InAs in the WL, in agreement with high-resolution x-ray diffraction results. Second, the effect of three different GaAs capping layer (CL) growth rates on the decomposition of the QDs is evaluated. The CL growth rate has a strong influence on the QD volume as well as the WL characteristics. Slower CL growth rates produce an In enrichment of the WL if compared to faster ones, together with a diminution of the QD height. In addition, assuming that the QD density does not change with the different CL growth rates, an estimation of the average In content inside the QDs is given. The high Ga/In intermixing during the decomposition of buried QDs does not only trigger a reduction of the QD height, but above all, a higher impoverishment of the In content inside the QDs, therefore modifying the two most important parameters that determine the optical properties of these structures.

  12. Synthesis of Platinum Nanotubes and Nanorings via Simultaneous Metal Alloying and Etching

    KAUST Repository

    Huang, Zhiqi

    2016-04-19

    Metallic nanotubes represent a class of hollow nanostructures with unique catalytic properties. However, the wet-chemical synthesis of metallic nanotubes remains a substantial challenge, especially for those with dimensions below 50 nm. This communication describes a simultaneous alloying-etching strategy for the synthesis of Pt nanotubes with open ends by selective etching Au core from coaxial Au/Pt nanorods. This approach can be extended for the preparation of Pt nanorings when Saturn-like Au core/Pt shell nanoparticles are used. The diameter and wall thickness of both nanotubes and nanorings can be readily controlled in the range of 14-37 nm and 2-32 nm, respectively. We further demonstrated that the nanotubes with ultrathin side walls showed superior catalytic performance in oxygen reduction reaction. © 2016 American Chemical Society.

  13. Etching and ellipsometry studies on CL-VPE grown GaN epilayer

    Directory of Open Access Journals (Sweden)

    Puviarasu P.

    2017-02-01

    Full Text Available The surface morphological characteristics of wet chemical etched GaN layers grown at different temperatures on (0 0 0 1 sapphire substrates by Chloride-Vapor Phase Epitaxy (Cl-VPE have been studied using optical microscope. Significant surface morphology changes have been observed in correlation to the growth temperature and etching time. Also optical properties of the as grown and high-energy silicon (Si ion irradiated gallium nitride (GaN epilayers were studied using monochromatic ellipsometry. The effect of ion fluences on the refractive index of the GaN has been investigated and it has been found to decrease with an increase of ion fluence. This decrease is attributed to irradiation-induced defects and polycrystallization which plays an important role in determining the optical properties of silicon (Si ion irradiated GaN layers.

  14. Synthesis of wirelike silicon nanostructures by dispersion of silicon on insulator using electroless etching

    Science.gov (United States)

    Mantey, Kevin; Shams, Somayeh; Nayfeh, Munir H.; Nayfeh, Osama; Alhoshan, Mansour; Alrokayan, Salman

    2010-12-01

    We employ electroless etching to disperse silicon on insulator (SOI) wafers in ionic silver HF into wirelike silicon nanostructures. The procedure allows detachment of the nanowires at the oxide interface and enables easy recovery of dispersions for subsequent controlled delivery. Nanowires 10 μm long and 50-100 nm thick are demonstrated using an SOI substrate of 10 μm device thickness. Direct material analysis shows no silver contamination after a wet-etch silver clean. Anodization treatment of the wires was conducted. Our measurements and analysis show that the wires are not amenable to anodization resulting from the fact that the nanowire radius is less than the thickness of depletion layer. The procedure has the potential of providing dispersions of arbitrarily long wirelike nanostructures which are useful for composite and energy applications.

  15. Characterization and management of waste water from desulphurization of flue gas by the wet absorption process with following oxidation. Karakterisering og behandling af spildevand fra roeggasafsvovling ved vaadabsorptionsprocessen med efterfoelgende oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Mose Pedersen, B.; Holm Kristensen, G.

    1990-04-15

    The utilization of the wet absorption process for the desulphurization of flue gas from coal fired power plants produces calcium sulphate, and waste water containing nitrate, neutral salts and a certain amount of heavy metals. The conditions which influence the content of the waste water and methods for the precipitation of heavy metals are discussed. Data from abroad on the characterization of coal and methods of precipitaion are presented in detail. The focus is on mercury and cadmium as these chemicals are dangerous pollutives. It is concluded that, generally speaking, 100% of the mercury comes from the coal and 95-98% of the cadmium comes from the limestone used in the desulphurization process. It is claimed that hydroxide precipitation resulted in an acceptable concentration of heavy metals when the output concentration was low, when the latter was higher hydroxide/sulphide precipitation was necessary. (AB).

  16. Marginal Sealing Durability of Two Contemporary Self-Etch Adhesives

    Science.gov (United States)

    Khoroushi, Maryam; Mansoori, Mahsa

    2012-01-01

    Introduction. Sealing abilities of two self-etch adhesives were evaluated after two aging processes: storage in water and thermocycling. Materials and Methods. Cl V cavities were prepared on the buccal and lingual aspects of 48 human premolars, with cervical margins 1 mm below the CEJ. Clearfil Protect Bond (CPB) and BeautiBond (BB) (two-step and one-step self-etch adhesives, resp.) were applied, each to half of the cavities and restored with composite resin. Each group was randomly subdivided into 4 subgroups (n = 12) and evaluated for dye penetration after 24 hours, after 3000 thermocycling rounds, after a 6-month water storage, and after 3000 thermocycling rounds plus 6-month water storage, respectively. Data was analyzed using SPSS 11.5 and Kruskal-Wallis and Mann-Whitney U tests (α = 0.05). Results. There were no significant differences in enamel and dentin microleakage between the adhesives (P = 0.683; P = 0.154). Furthermore, no significant differences were observed in enamel microleakage of each one of CPB and BB (P = 0.061 and P = 0.318, resp.). However, significant decrease was observed in subgroups 3 and 4 (P = 0.001) for CPB dentinal margins. Conclusion. In this study, limited aging procedures had no influence on marginal integrity of composite resin restorations bonded with self-etch adhesives of CPB and BB. Furthermore, CPB dentinal sealing improved after aging. PMID:22611501

  17. Metal assisted photochemical etching of 4H silicon carbide

    Science.gov (United States)

    Leitgeb, Markus; Zellner, Christopher; Schneider, Michael; Schwab, Stefan; Hutter, Herbert; Schmid, Ulrich

    2017-11-01

    Metal assisted photochemical etching (MAPCE) of 4H-silicon carbide (SiC) in Na2S2O8/HF and H2O2/HF aqueous solutions is investigated with platinum as metallic cathode. The formation process of the resulting porous layer is studied with respect to etching time, concentration and type of oxidizing agent. From the experiments it is concluded that the porous layer formation is due to electron hole pairs generated in the semiconductor, which stem from UV light irradiation. The generated holes are consumed during the oxidation of 4H-SiC and the formed oxide is dissolved by HF. To maintain charge balance, the oxidizing agent has to take up electrons at the Pt/etching solution interface. Total dissolution of the porous layers is achieved when the oxidizing agent concentration decreases during MAPCE. In combination with standard photolithography, the definition of porous regions is possible. Furthermore chemical micromachining of 4 H-SiC at room temperature is possible.

  18. Effect of pre-etching on sealing ability of two current self-etching adhesives

    Directory of Open Access Journals (Sweden)

    K Khosravi

    2005-05-01

    Full Text Available Background: We evaluated the effect of phosphoric acid etching on microleakage of two current self-etching adhesives on enamel margins in comparison to a conventional total- etch system. Methods: Sixty buccal class V cavities were made at the cemento-enamel junction with beveled enamel margins of extracted human premolar teeth and randomly divided into five groups (12 specimens in each group. Group 1 was applying with Clearfil SE bond, Group 2 with 35% phosphoric acid etching of enamel margins plus Clearfil SE bond, Group3 with I bond, Group 4 with 35% phosphoric acid etching of enamel margins plus I bond and Group5 with Scotchbond multi-purpose. All groups restored with a composite resins. After 24 hours storage with 100% humidity, the samples were thermocycled, immersed in a dye solution and sectioned buccoligually and enamel margins microleakage were evaluated on a scale of 0 to 2. Results: The differences between Groups 1 & 3 and Groups 3 & 4 were significant (P<0.05 but no significant differences between Groups1 & 2 or 1 & 5 were observed. Conclusion: The findings suggest that all-in-one adhesive systems need pre-etching enamel margins with phosphoric acid for effectively seal. Key words: Self-Etching Adhesives, Microleakage, Enamel, Total-Etch system

  19. Effect of pre-etching enamel on fatigue of self-etch adhesive bonds

    NARCIS (Netherlands)

    Erickson, R.L.; de Gee, A.J.; Feilzer, A.J.

    2008-01-01

    Objective. A previous study found that the shear bond strength (SBS) to bovine enamel for the self-etching adhesive Adper Prompt-L-Pop (PLP) was 75% of that found with the etch-and-rinse material SingleBond, while the comparative value for the shear fatigue limit (SFL) was only 58% at 10(5) load

  20. Dry-bonding Etch-and-Rinse Strategy Improves Bond Longevity of a Universal Adhesive to Sound and Artificially-induced Caries-affected Primary Dentin.

    Science.gov (United States)

    Lenzi, Tathiane Larissa; Soares, Fabio Zovico Maxnuck; Raggio, Daniela Prócida; Pereira, Gabriel Kalil Rocha; Rocha, Rachel de Oliveira

    To evaluate the effect of the etching strategy on the immediate and 1-year microtensile bond strength (μTBS) and structural reliability of a universal adhesive to sound and artificially-induced caries-affected dentin of primary teeth. Flat midcoronal dentin surfaces were exposed in 50 primary molars, which were then randomly assigned to 10 groups according to substrate (sound dentin [SD] and artificially-induced caries-affected dentin [CAD] with pH cycling for 14 days) and etching approach using Scotchbond Universal Adhesive (self-etching or dry or wet-bonding etch-and-rinse strategies) with Adper Single Bond Plus (two-step etch-and-rinse adhesive) and Clearfil SE Bond (two-step self-etching system) as controls. Composite buildups were constructed and sectioned to obtain bonded sticks (0.8 mm2) to be subjected to microtensile testing immediately or after 1 year of water aging. Data were analyzed using three-way repeated measures ANOVA and Tukey's test (α = 0.05). Weibull modulus and characteristic strength were also determined. A decrease in bond strength was observed after 1 year of water aging, except when the universal adhesive was used in the dry-bonding etch-and-rinse and self-etching approaches. However, the self-etching approach resulted in lower μTBS values in SD, while no difference among experimental groups was observed in CAD. Overall, higher Weibull modulus values were achieved in the groups with higher bond strength. The relationship between characteristic strength and bond strengths was not linear for all groups. The bond longevity of the universal adhesive using the dry-bonding etch-and-rinse approach on sound and artificially-induced caries-affected primary dentin was better than the other bonding agents and approaches tested.

  1. SiO2 Etching Yield Measurements by CF3 Ion Beam Injections Superposed with Light Irradiation

    Science.gov (United States)

    Ikuse, Kazumasa; Yoshimura, Satoru; Takizawa, Toshifumi; Karahashi, Kazuhiro; Kiuchi, Masato; Hamaguchi, Satoshi

    Etching yields of SiO2 by CF3 ion beam injections with or without simultaneous light irradiation have been measured by a low-energy mass-selected ion beam system. A Xe Lamp, an L2D2 lamp, an Ar ICP (inductively coupled plasma) or a VUV (Vacuum Ultraviolet) Lamp was used separately as the light source. The etching yield is the ratio of the number of incident ions to that of removed atoms. The obtained SiO2 etching yields by simultaneous irradiation of CF3 ions and photons from the light source were smaller than those by ion beam irradiation only. This difference in etching yields may be caused by modification of CFx polymer formation on the substrate surface during the beam etching process.

  2. PREFACE: Wetting: introductory note

    Science.gov (United States)

    Herminghaus, S.

    2005-03-01

    The discovery of wetting as a topic of physical science dates back two hundred years, to one of the many achievements of the eminent British scholar Thomas Young. He suggested a simple equation relating the contact angle between a liquid surface and a solid substrate to the interfacial tensions involved [1], γlg cos θ = γsg - γsl (1) In modern terms, γ denotes the excess free energy per unit area of the interface indicated by its indices, with l, g and s corresponding to the liquid, gas and solid, respectively [2]. After that, wetting seems to have been largely ignored by physicists for a long time. The discovery by Gabriel Lippmann that θ may be tuned over a wide range by electrochemical means [3], and some important papers about modifications of equation~(1) due to substrate inhomogeneities [4,5] are among the rare exceptions. This changed completely during the seventies, when condensed matter physics had become enthusiastic about critical phenomena, and was vividly inspired by the development of the renormalization group by Kenneth Wilson [6]. This had solved the long standing problem of how to treat fluctuations, and to understand the universal values of bulk critical exponents. By inspection of the critical exponents of the quantities involved in equation~(1), John W Cahn discovered what he called critical point wetting: for any liquid, there should be a well-defined transition to complete wetting (i.e., θ = 0) as the critical point of the liquid is approached along the coexistence curve [7]. His paper inspired an enormous amount of further work, and may be legitimately viewed as the entrance of wetting into the realm of modern physics. Most of the publications directly following Cahn's work were theoretical papers which elaborated on wetting in relation to critical phenomena. A vast amount of interesting, and in part quite unexpected, ramifications were discovered, such as the breakdown of universality in thin film systems [8]. Simultaneously, a number

  3. Micro-texturing into DLC/diamond coated molds and dies via high density oxygen plasma etching

    Directory of Open Access Journals (Sweden)

    Yunata Ersyzario Edo

    2015-01-01

    Full Text Available Diamond-Like Carbon (DLC and Chemical Vapor Deposition (CVD-diamond films have been widely utilized not only as a hard protective coating for molds and dies but also as a functional substrate for bio-MEMS/NEMS. Micro-texturing into these hard coated molds and dies provides a productive tool to duplicate the original mother micro-patterns onto various work materials and to construct any tailored micro-textures for sensors and actuators. In the present paper, the high density oxygen plasma etching method is utilized to make micro-line and micro-groove patterns onto the DLC and diamond coatings. Our developing oxygen plasma etching system is introduced together with characterization on the plasma state during etching. In this quantitative plasma diagnosis, both the population of activated species and the electron and ion densities are identified through the emissive light spectroscopy and the Langmuir probe method. In addition, the on-line monitoring of the plasmas helps to describe the etching process. DLC coated WC (Co specimen is first employed to describe the etching mechanism by the present method. Chemical Vapor Deposition (CVD diamond coated WC (Co is also employed to demonstrate the reliable capacity of the present high density oxygen plasma etching. This oxygen plasma etching performance is discussed by comparison of the etching rates.

  4. Ovine wet carcass syndrome of unknown aetiology

    African Journals Online (AJOL)

    plicating cachexia, inflammatory processes, lymphoedema, cardiac failure, glycogen storage or myxoedema in the pathogenesis of the syndrome. In conclusion, despite intensive investigation the aeti- ology of the wet carcase syndrome remains unknown. At present the possibility of a histamine reaction due to insect bites is ...

  5. Selective reactive ion etching of tungsten films in CHF/sub 3/ and other fluorinated gases

    Energy Technology Data Exchange (ETDEWEB)

    Pan, W.S.; Steckl, A.J.

    1988-07-01

    The use of reactive ion etching (RIE ) with fluorinated gas plasmas, such as SF/sub 6/, CF/sub 4/, CBrF/sub 3/, and CHF/sub 3/ mixed with oxygen, to achieve selective patterning of tungsten films is reported. The etch rates of W, Si, and SiO/sub 2/ were measured as a function of oxygen percentage in fluorinated gas plasmas under various conditions. Experiments on selectivity indicate that a CHF/sub 3//70%O/sub 2/ mixture under 20 sccm, 200 W, 20 mTorr etching conditions results in W:Si and W:SiO/sub 2/ etch rate ratios of 1.6:1 and 1.8:1, respectively. Optimized W:Si and W:SiO/sub 2/ selectivity ratios 4:1 and 4.8:1 have been obtained at 60 mTorr/150 W and 260 mTorr/200 W plasma conditions. For reverse selectivity, the optimum W:SiO/sub 2/ etch rate ratio measured is 1:4.6 in pure CHF/sub 3/ gas. The optimum W:Si reverse selectivity of 1:11.6 is obtained with an SF/sub 6//5%O/sub 2/ mixture plasma. A vertical-to-lateral etch ratio of 4:1 was measured with CHF/sub 3//70%O/sub 2/, 200 W, 10 mTorr, 20 sccm. The etching mechanisms of tungsten due to chemical and physical processes in various fluorocarbon gases under the RIE mode have been investigated and the role of etching species such as fluorine, bromine, and oxygen is discussed.

  6. Dynamic wetting on anisotropic patterned surfaces

    Science.gov (United States)

    Do-Quang, Minh; Wang, Jiayu; Nita, Satoshi; Shiomi, Junichiro; Amberg, Gustav; Physiochemical fluid mechanics Team; Maruyama-Chiashi Laboratory Team

    2014-11-01

    Dynamic wetting, as occurs when a droplet of a wetting liquid is brought in contact with a dry solid, is important in various engineering processes, such as printing, coating, and lubrication. Our overall aim is to investigate if and how the detailed properties of the solid surface influence the dynamics of wetting. We have recently quantified the hindering effect of fairly isotropic micron-sized patterns on the substrate. Here we will study highly anisotropic surfaces, such as parallel grooves, either perpendicular or parallel to an advancing contact line. This is done by detailed phase field simulations and experiments on structured silicon surfaces. The dynamic wetting behavior of drops on the grooved surfaces is governed by the combined interplay of the wetting line friction and the internal viscous dissipation. Influence of roughness is quantified in terms of the energy dissipation rate at the contact line using the experiment-simulation combined analysis. The energy dissipation of the contact line at the different part of the groove will be discussed. The performance of the model is assessed by comparing its predictions with the experimental data. This work was financially supported in part by, the Japan Society for the Promotion of Science (J.W., S.N., and J.S) and Swedish Governmental Agency for Innovation Systems (M.D.-Q. and G.A).

  7. Pulsed laser-assisted focused electron-beam-induced etching of titanium with XeF2: enhanced reaction rate and precursor transport.

    Science.gov (United States)

    Noh, J H; Fowlkes, J D; Timilsina, R; Stanford, M G; Lewis, B B; Rack, P D

    2015-02-25

    In order to enhance the etch rate of electron-beam-induced etching, we introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. The evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. The increased etch rate is attributed to photothermally enhanced Ti-F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.

  8. Correlation and interaction between sidewall passivation and chamber walls deposition during silicon gate etching

    Energy Technology Data Exchange (ETDEWEB)

    Kogelschatz, M.; Sadeghi, N. [Laboratoire de Spectrometrie Physique, Universite Joseph Fourier-Grenoble, BP 87, 38402 St Martin d' Heres (France); Cunge, G.; Joubert, O.; Vallier, L. [Laboratoire des Technologies de la Microelectronique, CNRS, Grenoble (France)

    2004-07-01

    The aim of the present paper is to review our work on plasma-surface interactions during the etching of silicon gates in low pressure high density HBr/Cl{sub 2}/O{sub 2} based plasmas. In integrated circuit manufacturing, the transfer of patterns onto the polysilicon layer relies on the formation of a passivation layer on sidewalls of the etched features, which protects the silicon gate sidewall fromisotropic etching. At the same time, a layer with an almost identical chemical composition is also deposited on the reactor walls and can modify the process parameters by changing the radicals' surface loss probability. In this work we use a new ''plasma etching-sputtering'' diagnostic technique, involving a subsequent ''mild etching'' of the layer deposited on the chamber walls by a few % SF{sub 6}-containing Ar plasma. Thus we investigate the chemical composition of this layer. This chemical composition is deduced from the time variation of the gas phase concentration of different atoms and radicals, the etch products of the wall deposited layer, monitored during the ''mild etching'' of the layer by time-resolved optical emission spectroscopy and mass spectrometry. Optical absorption spectroscopy and mass spectrometry have been employed to characterize the HBr/Cl{sub 2}/O{sub 2} plasma, currently used for the gate etching, and to estimate the absolute flux of neutral and ionic deposition precursors reaching the reactor walls. It comes out that the silicon wafer etch byproducts, SiCl{sub x} radicals (x<2) and SiO{sub y}Cl{sup +}{sub x} ions, are the main depositing agents. Finally, the chemical topography analysis method, based on the X-ray photoelectron spectroscopy, has been used to determine the chemical composition of the layer formed on the sidewalls of the silicon etched features. We show that the layers deposited on the sidewalls and on the chamber walls are both silicon oxyhalogenides (SiO{sub y

  9. Silicon germanium as a novel mask for silicon deep reactive ion etching

    KAUST Repository

    Serry, Mohamed Y.

    2013-10-01

    This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0Etching selectivity for silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

  10. Sensor yarns for real-time in situ detection of damage behavior for the purpose of structural health monitoring of textile-reinforced thermoset composites: development of a continuous wet-chemical silvering process for high-performance filament yarn

    Science.gov (United States)

    Onggar, T.; Häntzsche, E.; Nocke, A.; Hund, R. D.; Cherif, Ch

    2017-04-01

    High-performance textile yarns such as glass filament (GF) yarn will be used as the base material for the development of sensor yarns because glass filament yarns offer both high tensile strengths and moduli of elasticity, as well as high melting temperatures and elongation. A new continuous wet-chemical metallization process has been developed for GF yarns on a laboratory scale to achieve special properties such as electrical conductivity. The aim of the work is to develop a continuous wet-chemical silver plating process for the GF-filament yarn in order to achieve electrical conductivity on the GF-surface. The process was carried out continuously in order to metallize the GF, which is sensitive to the shear force. A homogeneous, completely covered and adhered silver layer on the GF yarn surfaces was obtained by the application of this technology. The surface morphology was been determined by light and scanning electron microscopy to assess the silver layer properties such as structure, homogeneity, and cracking. The chemical structure of the surfaces was analyzed by means of energy dispersive x-ray spectroscopy. For structural analysis, GF yarns were investigated using a Fourier transform infrared spectrometer. The dispersive and polar component of the surface energy of the sized and silvered GF yarn was measured by using a single fiber Tensiometer K100. The silver layer thickness and the silver content were determined after the metallization. Textile physical tests of the tensile strength, elasticity modulus, elongation at break, and yarn fineness of the single GF yarns as well as GF bundle were carried out.

  11. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF{sub 6} based plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto (Finland); Department of Physics, University of Jyvaeskylae, P.O. Box 35, 40014, Jyvaeskylae,Finland (Finland); Department of Micro and Nanosciences, School of Electrical Engineering, Aalto University, P.O. Box 13500, FI-00076, Aalto (Finland)

    2012-01-15

    The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 deg. C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF{sub 6} and O{sub 2} under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film's removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF{sub x}{sup +} and O{sup +} chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF{sub 6} based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

  12. Cohesion and agglomeration of wet powders

    Science.gov (United States)

    Raux, Pascal S.; Biance, Anne-Laure

    2018-01-01

    Wet high-shear granulation consists in vigorously mixing grains and a liquid binder to create agglomerates of various sizes. The process results from a balance between cohesion of the wet granular agglomerates and fragmentation due to the high mixing. By performing a simple test with glass beads and various liquids, we first focus on the static cohesion of wet granular media. Contrary to previous works, we extend the study to larger values of the liquid fraction w . After the well-documented plateau, the cohesive strength increases again with w , a behavior we capture by a simple model. We then focus on the dynamical cohesion of the media and we design an agglomeration process that consists in vibrating a bead/liquid mixture at a large amplitude. The vibrations induce not only the fluidization of the wet granular material but also the formation of aggregates. As expected, their size is affected by the liquid content, the frequency, and the amplitude of the vibrations, similarly to high-shear granulation data. However, the number of beads in an agglomerate does not depend on the bead size, showing a self-similar mechanism of agglomeration. The role of the static cohesion strength in this dynamical process remains therefore ambiguous.

  13. Advanced dry etching studies for micro- and nano-systems

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted

    for structuring of sapphire and many polymers. Metals and metal alloys have been structured by physical sputtering with argon ions in an ion beam etching system. The materials for which etch characteristics have been investigated are commonly used in device fabrication at DTU-Danchip. Ion beam etching was first...... and even contaminate the surface with metal flakes after resist removal. Ion beam etching has also been used for etching of steel without any problems with redeposition. For steel the etch rate was low which reduced the selectivity to the photo resist. Sapphire, a crystal of aluminum oxide, has a very low...

  14. Using wet microalgae for direct biodiesel production via microwave irradiation.

    Science.gov (United States)

    Cheng, Jun; Yu, Tao; Li, Tao; Zhou, Junhu; Cen, Kefa

    2013-03-01

    To address the large energy consumption of microalgae dewatering and to simplify the conventional two-step method (cellular lipid extraction and lipid transesterification) for biodiesel production, a novel process for the direct conversion of wet microalgae biomass into biodiesel by microwave irradiation is proposed. The influences of conventional thermal heating and microwave irradiation on biodiesel production from wet microalgae biomass were investigated. The effects of using the one-step (simultaneous lipid extraction and transesterification) and two-step methods were also studied. Approximately 77.5% of the wet microalgal cell walls were disrupted under microwave irradiation. The biodiesel production rate and yield from wet microalgae biomass obtained through the one-step process using microwave irradiation were 6-fold and 1.3-fold higher than those from wet microalgae obtained through the two-step process using conventional heating. Copyright © 2013 Elsevier Ltd. All rights reserved.

  15. Comparative Batch and Column Evaluation of Thermal and Wet ...

    African Journals Online (AJOL)

    ABSTRACT: The efficiency of regenerated spent commercial activated carbon for synthetic dye removal was studied using thermal and wet ... Keywords: Activated Carbon, Methyl Red, Chromatography Capacity, Wet and Thermal Regeneration. INTRODUCTION ... processes in wastewater treatment. A number of techniques ...

  16. Structuring of DLC:Ag nanocomposite thin films employing plasma chemical etching and ion sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Tamulevičius, Tomas, E-mail: Tomas.Tamulevicius@ktu.lt; Tamulevičienė, Asta; Virganavičius, Dainius; Vasiliauskas, Andrius; Kopustinskas, Vitoldas; Meškinis, Šarūnas; Tamulevičius, Sigitas

    2014-12-15

    Highlights: • CF{sub 4}/O{sub 2} dry etching of DLC:Ag films revealed the embedded Ag nanoparticles. • Plasma processed samples with more than 5 at.% Ag demonstrated Ostwald ripening. • 4 μm period patterns in aluminum and photoresist were imposed in the DLC:Ag film. • Different micro patterns are formed depending on the selected processing route. - Abstract: We analyze structuring effects of diamond like carbon based silver nanocomposite (DLC:Ag) thin films by CF{sub 4}/O{sub 2} plasma chemical etching and Ar{sup +} sputtering. DLC:Ag films were deposited employing unbalanced reactive magnetron sputtering of silver target with Ar{sup +} in C{sub 2}H{sub 2} gas atmosphere. Films with different silver content (0.6–12.9 at.%) were analyzed. The films (as deposited and exposed to plasma chemical etching) were characterized employing scanning electron microscopy and energy dispersive X-ray analysis (SEM/EDS), optical microscopy, ultraviolet–visible light (UV–VIS) spectroscopy and Fourier transform infrared (FTIR) spectroscopy. After deposition, the films were plasma chemically etched in CF{sub 4}/O{sub 2} mixture plasma for 2–6 min. It is shown that optical properties of thin films and silver nano particle size distribution can be tailored during deposition changing the magnetron current and C{sub 2}H{sub 2}/Ar ratio or during following plasma chemical etching. The plasma