WorldWideScience

Sample records for wavelength inp based

  1. Multi-wavelength laser based on an arrayed waveguide grating and Sagnac loop reflectors monolithically integrated on InP

    NARCIS (Netherlands)

    Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

    2010-01-01

    In this paper, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors, with an Arrayed Waveguide Grating (AWG) as frequency selective device, and Semiconductor Optical Amplifiers (SOA) as gain sections. The

  2. InP based lasers and optical amplifiers with wire-/dot-like active regions

    DEFF Research Database (Denmark)

    Reithmaier, J. P.; Somers, A.; Deubert, S.

    2005-01-01

    Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches will be ...

  3. Epitaxial growth of quantum dots on InP for device applications operating at the 1.55 μm wavelength range

    DEFF Research Database (Denmark)

    Semenova, Elizaveta; Kulkova, Irina; Kadkhodazadeh, Shima

    2014-01-01

    . In order to extract the QD benefits for the longer telecommunication wavelength range the technology of QD fabrication should be developed for InP based materials. In our work, we take advantage of both QD fabrication methods Stranski-Krastanow (SK) and selective area growth (SAG) employing block copolymer...

  4. All-Optical 9.35 Gb/s Wavelength Conversion in an InP Photonic Crystal Nanocavity

    DEFF Research Database (Denmark)

    Vukovic, Dragana; Yu, Yi; Heuck, Mikkel

    2013-01-01

    Wavelength conversion of a 9.35 Gb/s RZ signal is demonstrated using an InP photonic crystal H0 nanocavity. A clear eye is observed for the converted signal showing a pre-FEC bit error ratio down to 10-3.......Wavelength conversion of a 9.35 Gb/s RZ signal is demonstrated using an InP photonic crystal H0 nanocavity. A clear eye is observed for the converted signal showing a pre-FEC bit error ratio down to 10-3....

  5. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

    International Nuclear Information System (INIS)

    Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

    2004-01-01

    We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated surface In layer floating on the GaInAsP buffer layer

  6. Wavelength Conversion of a 9.35-Gb/s RZ OOK Signal in an InP Photonic Crystal Nanocavity

    DEFF Research Database (Denmark)

    Vukovic, Dragana; Yu, Yi; Heuck, Mikkel

    2014-01-01

    Wavelength conversion of a 10-Gb/s (9.35 Gb/s net rate) return-to-zero ON-OFF keying signal is demonstrated using a simple InP photonic crystal H0 nanocavity with Lorentzian line shape. The shifting of the resonance induced by the generation of free-carriers enables the pump intensity modulation...

  7. Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires: The Role of the Photonic Waveguide.

    Science.gov (United States)

    Haffouz, Sofiane; Zeuner, Katharina D; Dalacu, Dan; Poole, Philip J; Lapointe, Jean; Poitras, Daniel; Mnaymneh, Khaled; Wu, Xiaohua; Couillard, Martin; Korkusinski, Marek; Schöll, Eva; Jöns, Klaus D; Zwiller, Valery; Williams, Robin L

    2018-05-09

    We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in the count rate by nearly 2 orders of magnitude (0.4 to 35 kcps) is obtained for quantum dots emitting in the telecom O-band, showing high single-photon purity with multiphoton emission probabilities down to 2%. Using emission-wavelength-optimized waveguides, we demonstrate bright, narrow-line-width emission from single InAsP quantum dots with an unprecedented tuning range of 880 to 1550 nm. These results pave the way toward efficient single-photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.

  8. Studies on semiconductors based on InP with sub-ps response times; Untersuchungen an auf InP basierenden Halbleitern mit sub-ps Responsezeiten

    Energy Technology Data Exchange (ETDEWEB)

    Biermann, K.

    2007-06-28

    The present work describes investigation of new material concepts accomplished using molecular-beam-epitaxy (MBE) growth for application in ultra-fast photonic components. Nominally undoped and Be doped GaInAs/AlInAs multiple-quantumwell structures (MQW) were grown by MBE at growth temperatures down to 100 C (LT-MBE) on semi-insulating InP substrates. Crystalline, electric and optical properties of as-grown and annealed structures were investigated. Energy states near the conduction band of GaInAs determine the electrical and optical properties of LT-MQWs. The dynamics of charge carrier relaxation was studied by means of pump and probe experiments. Measurements of the differential transmission when excited by an additional cw laser and measurements utilizing two closely sequenced pump pulses support the capability of Be doped as-grown (annealed) LT GaInAs/AlInAs MQW structures for use in optical switches at switching frequencies in the 1 Tbit/s (250 Gbit/s) range. The voltage-induced change of interband transmission of InP based quantumcascade-lasers (QCL) during pulsed mode operation was analyzed by means of 8 band k.p calculations. The impacts of varying charge carrier distributions and of electrically heated samples can be neglected compared to the dominating effect of the electrical field on the interband transmission. The impact of MBE growth parameters on the interface quality of AlAsSb/ GaInAs heterostructures were determined by means of Hall measurements, temperature- and intensity-dependent PL measurements and spectral measurements of the interband- and intersubband-absorption. The impact of In segregation and Sb diffusion on the intersubband absorption was analyzed on the basis of bandstructure calculations. Intersubband transitions at wavelengths of about 1.8 {mu}m (1.55 {mu}m) were successfully achieved in MQW (coupled QW) structures. (orig.)

  9. Studies on semiconductors based on InP with sub-ps response times

    International Nuclear Information System (INIS)

    Biermann, K.

    2007-01-01

    The present work describes investigation of new material concepts accomplished using molecular-beam-epitaxy (MBE) growth for application in ultra-fast photonic components. Nominally undoped and Be doped GaInAs/AlInAs multiple-quantumwell structures (MQW) were grown by MBE at growth temperatures down to 100 C (LT-MBE) on semi-insulating InP substrates. Crystalline, electric and optical properties of as-grown and annealed structures were investigated. Energy states near the conduction band of GaInAs determine the electrical and optical properties of LT-MQWs. The dynamics of charge carrier relaxation was studied by means of pump and probe experiments. Measurements of the differential transmission when excited by an additional cw laser and measurements utilizing two closely sequenced pump pulses support the capability of Be doped as-grown (annealed) LT GaInAs/AlInAs MQW structures for use in optical switches at switching frequencies in the 1 Tbit/s (250 Gbit/s) range. The voltage-induced change of interband transmission of InP based quantumcascade-lasers (QCL) during pulsed mode operation was analyzed by means of 8 band k.p calculations. The impacts of varying charge carrier distributions and of electrically heated samples can be neglected compared to the dominating effect of the electrical field on the interband transmission. The impact of MBE growth parameters on the interface quality of AlAsSb/ GaInAs heterostructures were determined by means of Hall measurements, temperature- and intensity-dependent PL measurements and spectral measurements of the interband- and intersubband-absorption. The impact of In segregation and Sb diffusion on the intersubband absorption was analyzed on the basis of bandstructure calculations. Intersubband transitions at wavelengths of about 1.8 μm (1.55 μm) were successfully achieved in MQW (coupled QW) structures. (orig.)

  10. Particle detectors based on InP Schottky diodes

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan

    2012-01-01

    Roč. 10, č. 7 (2012), C100051-C100055 ISSN 1748-0221 R&D Projects: GA MŠk(CZ) OC10021; GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Particle detector * High purity InP layer * Schottky diode Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.869, year: 2011

  11. New connecting elements for cascade photoelectric converters based on InP

    Science.gov (United States)

    Marichev, A. E.; Pushnyi, B. V.; Levin, R. V.; Lebedeva, N. M.; Prasolov, N. D.; Kontrosh, E. V.

    2018-03-01

    In this paper, we report on the initial studies of connecting elements for cascade photodetectors. The heterostructures used in this work are based on InP. As a connecting element, it is proposed to use nanocrystalline inclusions instead of the tunnel junction. GaP nanocrystals are most suitable for this purpose because this material does not cause absorption of the incident radiation.

  12. Foundry based approach for InP based PIC development

    NARCIS (Netherlands)

    Smit, M.K.

    2014-01-01

    Europe is making significant investments in development of generic photonic foundry platform infrastructures for InP-based and Silicon Photonic ICs. Here we present the present status for the InP-based JePPIX platform.

  13. Integrated 1 GHz 4-channel InP phasar based WDM-receiver with Si bipolar frontend array

    NARCIS (Netherlands)

    Steenbergen, C.A.M.; Vreede, de L.C.N.; Dam, van C.; Scholtes, T.L.M.; Smit, M.K.; Tauritz, J.L.; Pedersen, J.W.; Moerman, I.; Verbeek, B.H.; Baets, R.G.F.

    1995-01-01

    An integrated 4-channel WDM-receiver frontend with 1 GHz channel bandwidth is described. The receiver consists of an integrated wavelength demultiplexer with photodiodes in InP technology connected through bond wires with a 4 channel Si bipolar transimpedance amplifier mounted on an epoxy board. The

  14. Progress in InP based photonic integration technology

    NARCIS (Netherlands)

    Smit, M.K.

    2015-01-01

    Indium Phosphide is a versatile semiconductor material that allows for integration of a broad range of components in a single chip. Basic building blocks include lasers, optical amplifiers, modulators, detectors and a variety of passive components, including wavelength demultiplexers, filters and

  15. Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate

    Science.gov (United States)

    Qui, Y.; Uhl, D.; Keo, S.

    2003-01-01

    Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.

  16. On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate

    DEFF Research Database (Denmark)

    Zubov, F.; Semenova, Elizaveta; Kulkova, Irina

    2017-01-01

    We report on a study of lasers with an emission wavelength of about 1.5 μm and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution with a b......We report on a study of lasers with an emission wavelength of about 1.5 μm and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution...

  17. Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A

    International Nuclear Information System (INIS)

    Ha, Neul; Kuroda, Takashi; Liu, Xiangming; Mano, Takaaki; Mitsuishi, Kazutaka; Noda, Takeshi; Sakuma, Yoshiki; Sakoda, Kazuaki; Castellano, Andrea; Sanguinetti, Stefano

    2014-01-01

    We demonstrate the formation of InAs quantum dots (QDs) on InAlAs/InP(111)A by means of droplet epitaxy. The C 3v symmetry of the (111)A substrate enabled us to realize highly symmetric QDs that are free from lateral elongations. The QDs exhibit a disk-like truncated shape with an atomically flat top surface. Photoluminescence signals show broad-band spectra at telecommunication wavelengths of 1.3 and 1.5 μm. Strong luminescence signals are retained up to room temperature. Thus, our QDs are potentially useful for realizing an entangled photon-pair source that is compatible with current telecommunication fiber networks

  18. Roadmap for integration of InP based photonics and silicon electronics

    NARCIS (Netherlands)

    Williams, K.A.

    2015-01-01

    We identify the synergies and a roadmap for the intimate integration of InP photonic integrated circuits and Silicon electronic ICs using wafer-scale processes. Advantages are foreseen in terms of bandwidth, energy savings and package simplification.

  19. Modeling of High-Speed InP DHBTs using Electromagnetic Simulation Based De-embedding

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Krozer, Viktor; Konczykowska, Agnieszka

    2006-01-01

    In this paper an approach for high-speed InP DHBT modeling valid to 110 GHz is reported. Electromagnetic (EM) simulation is applied to predict the embedded network model caused by pad parasitics. The form of the parasitic network calls for a 4-step de-embedding approach. Applying direct parameter...... extraction on the de-embedded device response leads to accurate small-signal model description of the InP DHBT. An parameter extraction approach is described for the Agilent HBT model, which assures consistency between large-signal and bias-dependent smallsignal modeling....

  20. Tunable absorption resonances in the ultraviolet for InP nanowire arrays.

    Science.gov (United States)

    Aghaeipour, Mahtab; Anttu, Nicklas; Nylund, Gustav; Samuelson, Lars; Lehmann, Sebastian; Pistol, Mats-Erik

    2014-11-17

    The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 InP nanowire-based solar cells and photodetectors.

  1. 75 GHz InP DHBT power amplifier based on two-stacked transistors

    DEFF Research Database (Denmark)

    Squartecchia, Michele; Midili, Virginio; Johansen, Tom Keinicke

    2017-01-01

    In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver st......, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm....

  2. Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

    DEFF Research Database (Denmark)

    Johansen, Tom K.; Yan, Lei; Dupuy, Jean‐Yves

    2013-01-01

    This letter describes the use of a power‐optimized cascode configuration for obtaining maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined power amplifier (PA). The PA has been fabricated in a high‐speed InP double heterojunction bipolar transistor technology and ...... configuration at mm‐wave frequencies are confirmed by both simulations and experimental results. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1178–1182, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27477...

  3. High-efficiency red electroluminescent device based on multishelled InP quantum dots.

    Science.gov (United States)

    Jo, Jung-Ho; Kim, Jong-Hoon; Lee, Ki-Heon; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

    2016-09-01

    We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849  cd/m2, a current efficiency of 4.2  cd/A, and an external quantum efficiency of 2.5%.

  4. Dynamic Sensor Interrogation Using Wavelength-Swept Laser with a Polygon-Scanner-Based Wavelength Filter

    Science.gov (United States)

    Kwon, Yong Seok; Ko, Myeong Ock; Jung, Mi Sun; Park, Ik Gon; Kim, Namje; Han, Sang-Pil; Ryu, Han-Cheol; Park, Kyung Hyun; Jeon, Min Yong

    2013-01-01

    We report a high-speed (∼2 kHz) dynamic multiplexed fiber Bragg grating (FBG) sensor interrogation using a wavelength-swept laser (WSL) with a polygon-scanner-based wavelength filter. The scanning frequency of the WSL is 18 kHz, and the 10 dB scanning bandwidth is more than 90 nm around a center wavelength of 1,540 nm. The output from the WSL is coupled into the multiplexed FBG array, which consists of five FBGs. The reflected Bragg wavelengths of the FBGs are 1,532.02 nm, 1,537.84 nm, 1,543.48 nm, 1,547.98 nm, and 1,553.06 nm, respectively. A dynamic periodic strain ranging from 500 Hz to 2 kHz is applied to one of the multiplexed FBGs, which is fixed on the stage of the piezoelectric transducer stack. Good dynamic performance of the FBGs and recording of their fast Fourier transform spectra have been successfully achieved with a measuring speed of 18 kHz. The signal-to-noise ratio and the bandwidth over the whole frequency span are determined to be more than 30 dB and around 10 Hz, respectively. We successfully obtained a real-time measurement of the abrupt change of the periodic strain. The dynamic FBG sensor interrogation system can be read out with a WSL for high-speed and high-sensitivity real-time measurement. PMID:23899934

  5. Single n+-i-n+ InP nanowires for highly sensitive terahertz detection.

    Science.gov (United States)

    Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B; Tan, Hark Hoe; Jagadish, Chennupati

    2017-03-24

    Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n + -i-n + InP nanowires. The axial doping profile of the n + -i-n + InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n + -i-n + InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

  6. Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon.

    Science.gov (United States)

    Li, Kun; Sun, Hao; Ren, Fan; Ng, Kar Wei; Tran, Thai-Truong D; Chen, Roger; Chang-Hasnain, Connie J

    2014-01-08

    Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and InP nanoneedles with the base diameters exceeding 1 μm. Here, we report distinct optical characteristics of InP nanoneedles which are varied from mostly zincblende, zincblende/wurtzite-mixed, to pure wurtzite crystalline phase. We achieved, for the first time, pure single-crystal wurtzite-phase InP nanoneedles grown on silicon with bandgaps of 80 meV larger than that of zincblende-phase InP. Being able to attain excellent material quality while scaling up in size promises outstanding device performance of these nanoneedles. At room temperature, a high internal quantum efficiency of 25% and optically pumped lasing are demonstrated for single nanoneedle as-grown on silicon substrate. Recombination dynamics proves the excellent surface quality of the InP nanoneedles, which paves the way toward achieving multijunction photovoltaic cells, long-wavelength heterostructure lasers, and advanced photonic integrated circuits.

  7. InP on SOI devices for optical communication and optical network on chip

    Science.gov (United States)

    Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

    2011-01-01

    For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

  8. Wavelength calibration of an imaging spectrometer based on Savart interferometer

    Science.gov (United States)

    Li, Qiwei; Zhang, Chunmin; Yan, Tingyu; Quan, Naicheng; Wei, Yutong; Tong, Cuncun

    2017-09-01

    The basic principle of Fourier-transform imaging spectrometer (FTIS) based on Savart interferometer is outlined. The un-identical distribution of the optical path difference which leads to the wavelength drift of each row of the interferogram is analyzed. Two typical methods for wavelength calibration of the presented system are described. The first method unifies different spectral intervals and maximum spectral frequencies of each row by a reference monochromatic light with known wavelength, and the dispersion compensation of Savart interferometer is also involved. The second approach is based on the least square fitting which builds the functional relation between recovered wavelength, row number and calibrated wavelength by concise equations. The effectiveness of the two methods is experimentally demonstrated with monochromatic lights and mixed light source across the detecting band of the system, and the results indicate that the first method has higher precision and the mean root-mean-square error of the recovered wavelengths is significantly reduced from 19.896 nm to 1.353 nm, while the second method is more convenient to implement and also has good precision of 2.709 nm.

  9. WDM cross-connect cascade based on all-optical wavelength converters for routing and wavelength slot interchanging using a reduced number of internal wavelengths

    DEFF Research Database (Denmark)

    Pedersen, Rune Johan Skullerud; Mikkelsen, Benny; Jørgensen, Bo Foged

    1998-01-01

    interchanging can be used to create a robust and nonblocking OXC. However, for an OXC with n fiber inlets each carrying m wavelengths the OXC requires n×m internal wavelengths, which constrains the size of the cross-connect. In this paper we therefore propose and demonstrate an architecture that uses a reduced......Optical transport layers need rearrangeable wavelength-division multiplexing optical cross-connects (OXCs) to increase the capacity and flexibility of the network. It has previously been shown that a cross-connect based on all-optical wavelength converters for routing as well as wavelength slot...... set of internal wavelengths without sacrificing cross-connecting capabilities. By inserting a partly equipped OXC with the new architecture in a 10-Gbit/s re-circulating loop setup we demonstrate the possibility of cascading up to ten OXCs. Furthermore, we investigate the regenerating effect...

  10. POF based glucose sensor incorporating grating wavelength filters

    DEFF Research Database (Denmark)

    Hassan, Hafeez Ul; Aasmul, Søren; Bang, Ole

    2014-01-01

    AND RESEARCH IN POLYMER OPTICAL DEVICES; TRIPOD. Within the domain of TRIPOD, research is conducted on "Plastic Optical Fiber based Glucose Sensors Incorporating Grating Wavelength Filters". Research will be focused to optimized fiber tips for better coupling efficiency, reducing the response time of sensor...

  11. Design of integrated optics all-optical label swappers for spectral amplitude code label swapping optical packet networks on active/passive InP technology

    NARCIS (Netherlands)

    Habib, C.; Munoz, P.; Leijtens, X.J.M.; Chen, Lawrence; Smit, M.K.; Capmany, J.

    2009-01-01

    In this paper the designs of optical label swapper devices, for spectral amplitude coded labels, monolithically integrated on InP active/passive technology are pre sented. The devices are based on cross-gain modulation in a semiconductor optical amplifier. Multi-wavelength operation is enabled by

  12. Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Bouchoule, S.; Vallier, L.; Patriarche, G.; Chevolleau, T.; Cardinaud, C.

    2012-01-01

    A Cl 2 -HBr-O 2 /Ar inductively coupled plasma (ICP) etching process has been adapted for the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool. Smooth and anisotropic InP etching is obtained at moderate etch rate (∼600 nm/min). Ex situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiO x passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl 2 -based ICP etching results in a significantly P-rich surface. The phosphorous layer identified on the top surface is estimated to be ∼1-1.3-nm thick. On the other hand InP etching in HBr/Ar plasma results in a more stoichiometric surface. In contrast to the etched sidewalls, the etched surface is free from oxides with negligible traces of silicon. Exposure to ambient air of the samples submitted to Cl 2 -based chemistry results in the complete oxidation of the P-rich top layer. It is concluded that a post-etch treatment or a pure HBr plasma step may be necessary after Cl 2 -based ICP etching for the recovery of the InP material.

  13. When is an INP not an INP?

    Science.gov (United States)

    Simpson, Emma; Connolly, Paul; McFiggans, Gordon

    2016-04-01

    Processes such as precipitation and radiation depend on the concentration and size of different hydrometeors within clouds therefore it is important to accurately predict them in weather and climate models. A large fraction of clouds present in our atmosphere are mixed phase; contain both liquid and ice particles. The number of drops and ice crystals present in mixed phase clouds strongly depends on the size distribution of aerosols. Cloud condensation nuclei (CCN), a subset of atmospheric aerosol particles, are required for liquid drops to form in the atmosphere. These particles are ubiquitous in the atmosphere. To nucleate ice particles in mixed phase clouds ice nucleating particles (INP) are required. These particles are rarer than CCN. Here we investigate the case where CCN and INPs are in direct competition with each other for water vapour within a cloud. Focusing on the immersion and condensation modes of freezing (where an INP must be immersed within a liquid drop before it can freeze) we show that the presence of CCN can suppress the formation of ice. CCN are more hydrophilic than IN and as such are better able to compete for water vapour than, typically insoluble, INPs. Therefore water is more likely to condense onto a CCN than INP, leaving the INP without enough condensed water on it to be able to freeze in the immersion or condensation mode. The magnitude of this suppression effect strongly depends on a currently unconstrained quantity. Here we refer to this quantity as the critical mass of condensed water required for freezing, Mwc. Mwc is the threshold amount of water that must be condensed onto a INP before it can freeze in the immersion or condensation mode. Using the detailed cloud parcel model, Aerosol-Cloud-Precipiation-Interaction Model (ACPIM), developed at the University of Manchester we show that if only a small amount of water is required for freezing there is little suppression effect and if a large amount of water is required there is a

  14. High detection performance of particle detectors based on SI InP doped with Ti and Zn

    Czech Academy of Sciences Publication Activity Database

    Gorodynskyy, Vladyslav; Yatskiv, Roman; Žďánský, Karel; Pekárek, Ladislav

    2008-01-01

    Roč. 55, č. 5 (2008), s. 2785-2788 ISSN 0018-9499 R&D Projects: GA AV ČR KAN400670651 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z20670512 Keywords : radiation detection * InP * crystal growth Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.518, year: 2008

  15. Heteroepitaxially grown InP solar cells

    International Nuclear Information System (INIS)

    Weinberg, I.; Swartz, C.K.; Brinker, D.J.; Wilt, D.M.

    1990-01-01

    Although they are significantly more radiation resistant than either Si or GaAs solar cells, their high wafer cost presents a barrier to the widespread use of InP solar cells in space. For this reason, the authors have initiated a program aimed at producing high efficiency, radiation resistant solar cells processed from InP heteroepitaxially grown on cheaper substrates. The authors' objective is to present the most recent results emanating from this program together with the results of their initial proton irradiations on these cells. This paper reports that InP cells were processed from a 4 micron layer of InP, grown by OMCVD on a silicon substrate, with a 0.5 micron buffer layer between the InP directly grown on a GaAs substrate. Initial feasibility studies, in a Lewis sponsored program at the Spire corporation, resulted in air mass zero efficiencies of 7.1% for the former cells and 9.1% for the latter. These initial low efficiencies are attributed to the high dislocation densities caused by lattice mismatch. The authors' preirradiation analysis indicates extremely low minority carrier diffusion lengths, in both cell base and emitter, and high values of both the diffusion and recombination components of the diode reverse saturation currents. Irradiation by 10 MeV protons, to a fluence of 10 13 cm -2 , resulted in relatively low degradation in cell efficiency, short circuit current and open circuit voltage

  16. Hydrogen iodide-based dry etching of GaAs, InP, and related compounds

    International Nuclear Information System (INIS)

    Pearton, S.J.; Chakrabarti, U.K.; Hobson, W.S.; Abernathy, C.R.; Katz, A.; Ren, F.; Fullowan, T.R.; Perley, A.P.

    1992-01-01

    In this paper HI/H 2 /Ar discharges are shown to be universal etchants for III-V semiconductors, giving rise to highly anisotropic features with smooth surface morphologies. At low dc Self bias (-V) and low pressure (1 mTorr), etch rates for all III-V materials of >2000 Angstrom · min -1 are possible for high HI percentages in the discharges, whereas rates greater than 1 μm · min -1 are obtained at higher pressures and dc biases. These etch rates are approximately an order of magnitude faster than for CH 4 /H 2 Ar mixtures under the same conditions and there is no polymer deposition on the mask or within the reactor chamber with HI/H 2 /Ar. Auger electron spectroscopy reveals residue-free, stoichiometric surfaces after dry etching in this mixture. As a result, photoluminescent intensities from dry etched samples remain high with little apparent damage introduction. Changes in the near-surface carrier concentration due to hydrogen passivation effects are also negligible with HI-based mixtures in comparison to CH 4 -based dry etching

  17. Optical buffer based on monolithic InP phased-array 1×16 switch with silica-PLC pitch converter and ultra-compact coiled fiber delay lines

    NARCIS (Netherlands)

    Tanemura, T.; Soganci, I. M.; Oyama, T.; Ohyama, T.; Mino, S.; Williams, K. A.; Calabretta, N.; Dorren, H. J S; Nakano, Y.

    2010-01-01

    We demonstrate large-capacity high-resolution optical buffer, comprising 1×16 InP switch and ultra-compact delay lines based on thin-cladding highly nonlinear fibers. Silica-PLC-based pitch converter is employed to realize uniform coupling from all 16 switch ports simultaneously.

  18. MEMS-based microspectrometer technologies for NIR and MIR wavelengths

    International Nuclear Information System (INIS)

    Schuler, Leo P; Milne, Jason S; Dell, John M; Faraone, Lorenzo

    2009-01-01

    Commercially manufactured near-infrared (NIR) instruments became available about 50 years ago. While they have been designed for laboratory use in a controlled environment and boast high performance, they are generally bulky, fragile and maintenance intensive, and therefore expensive to purchase and maintain. Micromachining is a powerful technique to fabricate micromechanical parts such as integrated circuits. It was perfected in the 1980s and led to the invention of micro electro mechanical systems (MEMSs). The three characteristic features of MEMS fabrication technologies are miniaturization, multiplicity and microelectronics. Combined, these features allow the batch production of compact and rugged devices with integrated intelligence. In order to build more compact, more rugged and less expensive NIR instruments, MEMS technology has been successfully integrated into a range of new devices. In the first part of this paper we discuss the UWA MEMS-based Fabry-Perot spectrometer, its design and issues to be solved. MEMS-based Fabry-Perot filters primarily isolate certain wavelengths by sweeping across an incident spectrum and the resulting monochromatic signal is detected by a broadband detector. In the second part, we discuss other microspectrometers including other Fabry-Perot spectrometer designs, time multiplexing devices and mixed time/space multiplexing devices. (topical review)

  19. Bandgap Engineering of InP QDs Through Shell Thickness and Composition

    Energy Technology Data Exchange (ETDEWEB)

    Dennis, Allison M. [Los Alamos National Laboratory; Mangum, Benjamin D. [Los Alamos National Laboratory; Piryatinski, Andrei [Los Alamos National Laboratory; Park, Young-Shin [Los Alamos National Laboratory; Htoon, Han [Los Alamos National Laboratory; Hollingsworth, Jennifer A. [Los Alamos National Laboratory

    2012-06-21

    Fields as diverse as biological imaging and telecommunications utilize the unique photophysical and electronic properties of nanocrystal quantum dots (NQDs). The development of new NQD compositions promises material properties optimized for specific applications, while addressing material toxicity. Indium phosphide (InP) offers a 'green' alternative to the traditional cadmium-based NQDs, but suffers from extreme susceptibility to oxidation. Coating InP cores with more stable shell materials significantly improves nanocrystal resistance to oxidation and photostability. We have investigated several new InP-based core-shell compositions, correlating our results with theoretical predictions of their optical and electronic properties. Specifically, we can tailor the InP core-shell QDs to a type-I, quasi-type-II, or type-II bandgap structure with emission wavelengths ranging from 500-1300 nm depending on the shell material used (ZnS, ZnSe, CdS, or CdSe) and the thickness of the shell. Single molecule microscopy assessments of photobleaching and blinking are used to correlate NQD properties with shell thickness.

  20. An ellipsometric measurement of optical properties for InP surfaces

    International Nuclear Information System (INIS)

    Liu, X.; Irene, E.A.; Hattangady, S.; Fountain, G.

    1990-01-01

    Several chemical cleaning procedures for InP surfaces have been studied using ellipsometry. The strong influence of cleaning on the optical properties of InP surfaces suggests that the measurements involved the formation of surface films. In order to determine the complex index of refraction for InP, a novel method which employs ellipsometry measurements of a thin nonabsorbing film on a substrate rather than measurements of a bare surface has been explored. From the knowledge of the refractive index for a series of thicknesses of films on a substrate, the complex refractive index value for the substrate can be determined. Plasma enhanced chemical vapor deposition (PECVD) SiO 2 and Si 3 N 4 films on InP have been used for this experiment, and the complex refractive index for InP has been determined to be 3.521 + i0.300 at the wavelength of 632.8 nm

  1. Selected area growth integrated wavelength converter based on PD-EAM optical logic gate

    International Nuclear Information System (INIS)

    Niu Bin; Zhou Daibing; Zhang Can; Liang Song; Lu Dan; Zhao Lingjuan; Wang Wei; Qiu Jifang; Wu Jian

    2014-01-01

    A selected area growth wavelength converter based on a PD-EAM optical logic gate for WDM application is presented, integrating an EML transmitter and a SOA-PD receiver. The design, fabrication, and DC characters were analyzed. A 2 Gb/s NRZ signal based on the C-band wavelength converted to 1555 nm with the highest extinction ratio of 7 dB was achieved and wavelength converted eye diagrams with eyes opened were presented. (semiconductor devices)

  2. Interrogation of weak Bragg grating sensors based on dual-wavelength differential detection.

    Science.gov (United States)

    Cheng, Rui; Xia, Li

    2016-11-15

    It is shown that for weak Bragg gratings the logarithmic ratio of reflected intensities at any two wavelengths within the spectrum follows a linear relationship with the Bragg wavelength shift, with a slope proportional to their wavelength spacing. This finding is exploited to develop a flexible, efficient, and cheap interrogation solution of weak fiber Bragg grating (FBGs), especially ultra-short FBGs, in distributed sensing based on dual-wavelength differential detection. The concept is experimentally studied in both single and distributed sensing systems with ultra-short FBG sensors. The work may form the basis of new and promising FBG interrogation techniques based on detecting discrete rather than continuous spectra.

  3. Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

    Science.gov (United States)

    Tyagi, S.; Singh, K.; Bhimnathwala, H.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

  4. Wavelength-stepped, actively mode-locked fiber laser based on wavelength-division-multiplexed optical delay lines

    Science.gov (United States)

    Lee, Eunjoo; Kim, Byoung Yoon

    2017-12-01

    We propose a new scheme for an actively mode-locked wavelength-swept fiber laser that produces a train of discretely wavelength-stepped pulses from a short fiber cavity. Pulses with different wavelengths are split and combined by standard wavelength division multiplexers with fiber delay lines. As a proof of concept, we demonstrate a laser using an erbium doped fiber amplifier and commercially available wavelength-division multiplexers with wavelength spacing of 0.8 nm. The results show simultaneous mode-locking at three different wavelengths. Laser output parameters in time domain, optical and radio frequency spectral domain, and the noise characteristics are presented. Suggestions for the improved design are discussed.

  5. Ionospheric research at INPE

    International Nuclear Information System (INIS)

    Abdu, M.A.

    1984-01-01

    Ionosphere investigations at INPE are mainly concerned with the problems of equatorial and tropical ionospheres and their electrodynamic coupling with the high latitude ionosphere. Present research objectives include investigations in the following specific areas: equatorial ionospheric plasma dynamics; plasma irregularity generation and morphology, and effects on space borne radar operations; ionospheric response to disturbance dynamo and magnetospheric electric fields; aeronomic effcts of charged particle precipitation in the magnetic anomaly, etc. These problems are being investigated using experimental datacollected from ionospheric diagnostic instruments being operated at different locations in Brazil. These instruments are: ionosondes, VHF electronic polarimeters, L-band scintillation receivers, airglow photometers, riometers and VLF receivers. A brief summary of the research activities and some recnet results will be presented. (Author) [pt

  6. Quantum metropolitan optical network based on wavelength division multiplexing.

    Science.gov (United States)

    Ciurana, A; Martínez-Mateo, J; Peev, M; Poppe, A; Walenta, N; Zbinden, H; Martín, V

    2014-01-27

    Quantum Key Distribution (QKD) is maturing quickly. However, the current approaches to its application in optical networks make it an expensive technology. QKD networks deployed to date are designed as a collection of point-to-point, dedicated QKD links where non-neighboring nodes communicate using the trusted repeater paradigm. We propose a novel optical network model in which QKD systems share the communication infrastructure by wavelength multiplexing their quantum and classical signals. The routing is done using optical components within a metropolitan area which allows for a dynamically any-to-any communication scheme. Moreover, it resembles a commercial telecom network, takes advantage of existing infrastructure and utilizes commercial components, allowing for an easy, cost-effective and reliable deployment.

  7. Antireflection coating on InP for semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hantehzadeh, M.R. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of)]. E-mail: hanteh@sr.iau.ac.ir; Ghoranneviss, M. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Sari, A.H. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Sahlani, F. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Shokuhi, A. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Shariati, M. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2006-10-25

    Aluminum nitride thin film by RF magnetron sputtering is used to produce antireflection coating on InP. The index of refection variation of aluminum nitride for different thickness at different wavelength in the range of 400 to 1500 nm is investigated using reflection spectroscopy. Subsequent Ar+ ion implantation at 30 keV with different doses on these coated layers has been performed. The morphology of aluminum nitride after ion implantation is characterized using atomic force microscopy AFM.

  8. Antireflection coating on InP for semiconductor detectors

    International Nuclear Information System (INIS)

    Hantehzadeh, M.R.; Ghoranneviss, M.; Sari, A.H.; Sahlani, F.; Shokuhi, A.; Shariati, M.

    2006-01-01

    Aluminum nitride thin film by RF magnetron sputtering is used to produce antireflection coating on InP. The index of refection variation of aluminum nitride for different thickness at different wavelength in the range of 400 to 1500 nm is investigated using reflection spectroscopy. Subsequent Ar+ ion implantation at 30 keV with different doses on these coated layers has been performed. The morphology of aluminum nitride after ion implantation is characterized using atomic force microscopy AFM

  9. Simulation for silicon-compatible InGaAs-based junctionless field-effect transistor using InP buffer layer

    Science.gov (United States)

    Seo, Jae Hwa; Cho, Seongjae; Kang, In Man

    2013-10-01

    In this paper, we present the optimized performances of indium gallium arsenide (InGaAs)-based compound junctionless field-effect transistors (JLFETs) using an indium phosphide (InP) buffer layer. The proposed InGaAs-InP material combination with little lattice mismatch provides a significant improvement in current drivability securing various potential applications. Device optimization is performed in terms of primary dc parameters and characterization is investigated by two-dimensional (2D) technology computer-aided design simulations. The optimization variables were the channel doping concentration (Nch), the buffer doping concentration (Nbf), and the channel thickness (Tch). For the optimally designed InGaAs JLFET, on-state current (Ion) of 325 µA µm-1, subthreshold swing (S) of 80 mV dec-1, and current ratio (Ion/Ioff) of 109 were obtained. In the end, the results are compared with the data of silicon (Si)-based JL MOSFETs to confirm the improvements.

  10. FAO UN-REDD- INPE Joint Programme on Forest Monitoring Systems based on RS and GIS techniques

    Science.gov (United States)

    Jonckheere, I. G.; FAO UN-REDD MRV Team

    2010-12-01

    Capacity Development and Training for National Forest Monitoring Systems for Reducing Emissions from Deforestation and Forest Degradation in Developing Countries (REDD+) REDD+, which stands for ’Reducing Emissions from Deforestation and Forest Degradation in Developing Countries’ - is an effort to create a financial value for the carbon stored in forests, offering incentives for developing countries to reduce emissions from forested lands and invest in low-carbon paths to sustainable development. The UN-REDD Programme, a collaborative partnership between FAO, UNDP and UNEP launched in September 2008, supports countries to develop capacity to REDD+ and to implement a future REDD+ mechanism in a post-2012 climate regime. The programme works at both the national and global scale, through support mechanisms for country-driven REDD strategies and international consensus-building on REDD+ processes. The UN-REDD Programme gathers technical teams from around the world to develop common approaches, analyses and guidelines on issues such as measurement, reporting and verification (MRV) of carbon emissions and flows, remote sensing, and greenhouse gas inventories. Within the partnership, FAO supports countries on technical issues related to forestry and the development of cost effective and credible MRV processes for emission reductions. While at the international level, it fosters improved guidance on MRV approaches, including consensus on principles and guidelines for MRV and training programmes. It provides guidance on how best to design and implement REDD+, to ensure that forests continue to provide multiple benefits for livelihoods and biodiversity to societies while storing carbon at the same time. Other areas of work include national forest assessments and monitoring of in-country policy and institutional change. FAO and INPE (Brazilian Space Agency) have joint forces through a MoU signed last year in Copenhagen. A major joint programme has been agreed upon to set

  11. Polarization Insensitive Wavelength Conversion Based on Four-Wave Mixing in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Pu, Minhao; Hu, Hao; Peucheret, Christophe

    2012-01-01

    We experimentally demonstrate, for the first time, polarization-insensitive wavelength conversion of a 10 Gb/s NRZ-OOK data signal based on four-wave mixing in a silicon nanowire with bit-error rate measurements.......We experimentally demonstrate, for the first time, polarization-insensitive wavelength conversion of a 10 Gb/s NRZ-OOK data signal based on four-wave mixing in a silicon nanowire with bit-error rate measurements....

  12. Optimizing image-based patterned defect inspection through FDTD simulations at multiple ultraviolet wavelengths

    Science.gov (United States)

    Barnes, Bryan M.; Zhou, Hui; Henn, Mark-Alexander; Sohn, Martin Y.; Silver, Richard M.

    2017-06-01

    The sizes of non-negligible defects in the patterning of a semiconductor device continue to decrease as the dimensions for these devices are reduced. These "killer defects" disrupt the performance of the device and must be adequately controlled during manufacturing, and new solutions are required to improve optics-based defect inspection. To this end, our group has reported [Barnes et al., Proc. SPIE 1014516 (2017)] our initial five-wavelength simulation study, evaluating the extensibility of defect inspection by reducing the inspection wavelength from a deep-ultraviolet wavelength to wavelengths in the vacuum ultraviolet and the extreme ultraviolet. In that study, a 47 nm wavelength yielded enhancements in the signal to noise (SNR) by a factor of five compared to longer wavelengths and in the differential intensities by as much as three orders-of-magnitude compared to 13 nm. This paper briefly reviews these recent findings and investigates the possible sources for these disparities between results at 13 nm and 47 nm wavelengths. Our in-house finite-difference time-domain code (FDTD) is tested in both two and three dimensions to determine how computational conditions contributed to the results. A modified geometry and materials stack is presented that offers a second viewpoint of defect detectability as functions of wavelength, polarization, and defect type. Reapplication of the initial SNR-based defect metric again yields no detection of a defect at λ = 13 nm, but additional image preprocessing now enables the computation of the SNR for λ = 13 nm simulated images and has led to a revised defect metric that allows comparisons at all five wavelengths.

  13. Experimental characterization of a new multicasting node architecture based on space splitters and wavelength converters

    Science.gov (United States)

    He, Hao; Su, Yikai; Hu, Peigang; Hu, Weisheng

    2005-11-01

    IPTV-based broadband services such as interactive multimedia and video conferencing are considered as promising revenue-adding services, and multicast is proven to be a good supplier to support these applications for its reduced consumption of network bandwidth. Generally there are two approaches to implement optical layer multicast. One is space-domain multicast using space-splitter which is low cost but has wavelength continuity constraint, the other is frequency-domain multicast using wavelength converter which resolves the wavelength continuity but with high costs. A new multicasting node which adopts both space-domain multicast and frequency-domain multicast is recently discussed. In this paper we present an experimental demonstration of the new multicasting node architecture based on space splitters and wavelength converters, measurements to characterize such a node are provided.

  14. Novel anti-jamming technique for OCDMA network through FWM in SOA based wavelength converter

    Science.gov (United States)

    Jyoti, Vishav; Kaler, R. S.

    2013-06-01

    In this paper, we propose a novel anti-jamming technique for optical code division multiple access (OCDMA) network through four wave mixing (FWM) in semiconductor optical amplifier (SOA) based wavelength converter. OCDMA signal can be easily jammed with high power jamming signal. It is shown that wavelength conversion through four wave mixing in SOA has improved capability of jamming resistance. It is observed that jammer has no effect on OCDMA network even at high jamming powers by using the proposed technique.

  15. Dense Wavelength Division (De Multiplexers Based on Fiber Bragg Gratings

    Directory of Open Access Journals (Sweden)

    S. BENAMEUR

    2014-05-01

    Full Text Available This study is to measure the impact of demultiplexers based on Fiber Bragg Grating (FBG filter on performance of DWDM system for optical access network. An optical transmission link has been established in which we have inserted a demultiplexer based on four different FBG filters. The first step will be the characterization of FBG’s filters (i.e. uniform FBG, Gaussian apodized Grating, chirped FBG to explain their behavior in the optical link. The simulations were conducted for different fiber’s lengths, filter bandwidth and different received power to get the best system performance. This helped to assess their impact on the link performance in terms of Bit Error Rate (BER.

  16. Improvement in QEPAS system utilizing a second harmonic based wavelength calibration technique

    Science.gov (United States)

    Zhang, Qinduan; Chang, Jun; Wang, Fupeng; Wang, Zongliang; Xie, Yulei; Gong, Weihua

    2018-05-01

    A simple laser wavelength calibration technique, based on second harmonic signal, is demonstrated in this paper to improve the performance of quartz enhanced photoacoustic spectroscopy (QEPAS) gas sensing system, e.g. improving the signal to noise ratio (SNR), detection limit and long-term stability. Constant current, corresponding to the gas absorption line, combining f/2 frequency sinusoidal signal are used to drive the laser (constant driving mode), a software based real-time wavelength calibration technique is developed to eliminate the wavelength drift due to ambient fluctuations. Compared to conventional wavelength modulation spectroscopy (WMS), this method allows lower filtering bandwidth and averaging algorithm applied to QEPAS system, improving SNR and detection limit. In addition, the real-time wavelength calibration technique guarantees the laser output is modulated steadily at gas absorption line. Water vapor is chosen as an objective gas to evaluate its performance compared to constant driving mode and conventional WMS system. The water vapor sensor was designed insensitive to the incoherent external acoustic noise by the numerical averaging technique. As a result, the SNR increases 12.87 times in wavelength calibration technique based system compared to conventional WMS system. The new system achieved a better linear response (R2 = 0 . 9995) in concentration range from 300 to 2000 ppmv, and achieved a minimum detection limit (MDL) of 630 ppbv.

  17. Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Žďánský, Karel; Pekárek, Ladislav

    2009-01-01

    Roč. 598, č. 3 (2009), s. 759-763 ISSN 0168-9002 R&D Projects: GA AV ČR KAN400670651 Institutional research plan: CEZ:AV0Z20670512 Keywords : radiation detector * InP * crystal growth Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.317, year: 2009

  18. Characterization of FBG sensor interrogation based on a FDML wavelength swept laser

    Science.gov (United States)

    Jung, Eun Joo; Kim, Chang-Seok; Jeong, Myung Yung; Kim, Moon Ki; Jeon, Min Yong; Jung, Woonggyu; Chen, Zhongping

    2012-01-01

    In this study, we develop an ultra-fast fiber Bragg grating sensor system that is based on the Fourier domain mode-locked (FDML) swept laser. A FDML wavelength swept laser has many advantages compared to the conventional wavelength swept laser source, such as high-speed interrogation, narrow spectral sensitivity, and high phase stability. The newly developed FDML wavelength swept laser shows a superior performance of a high scan rate of 31.3 kHz and a broad scan range of over 70 nm simultaneously. The performance of the grating sensor interrogating system using a FDML wavelength swept laser is characterized in both static and dynamic strain responses. PMID:18852764

  19. Design of single-polarization wavelength splitter based on photonic crystal fiber.

    Science.gov (United States)

    Zhang, Shanshan; Zhang, Weigang; Geng, Pengcheng; Li, Xiaolan; Ruan, Juan

    2011-12-20

    A new single-polarization wavelength splitter based on the photonic crystal fiber (PCF) has been proposed. The full-vector finite-element method (FEM) is applied to analyze the single-polarization single-mode guiding properties. Splitting of two different wavelengths is realized by adjusting the structural parameters. The semi-vector three-dimensional beam propagation method is employed to confirm the wavelength splitting characteristics of the PCF. Numerical simulations show that the wavelengths of 1.3 μm and 1.55 μm are split for a fiber length of 10.7 mm with single-polarization guiding in each core. The crosstalk between the two cores is low over appreciable optical bandwidths.

  20. InP membrane on silicon integration technology

    NARCIS (Netherlands)

    Smit, M.K.

    2013-01-01

    Integration of light sources in silicon photonics is usually done with an active InP-based layer stack on a silicon-based photonic circuit-layer. InP Membrane On Silicon (IMOS) technology integrates all functionality in a single InP-based layer.

  1. All-optical SR flip-flop based on SOA-MZI switches monolithically integrated on a generic InP platform

    Science.gov (United States)

    Pitris, St.; Vagionas, Ch.; Kanellos, G. T.; Kisacik, R.; Tekin, T.; Broeke, R.; Pleros, N.

    2016-03-01

    At the dawning of the exaflop era, High Performance Computers are foreseen to exploit integrated all-optical elements, to overcome the speed limitations imposed by electronic counterparts. Drawing from the well-known Memory Wall limitation, imposing a performance gap between processor and memory speeds, research has focused on developing ultra-fast latching devices and all-optical memory elements capable of delivering buffering and switching functionalities at unprecedented bit-rates. Following the master-slave configuration of electronic Flip-Flops, coupled SOA-MZI based switches have been theoretically investigated to exceed 40 Gb/s operation, provided a short coupling waveguide. However, this flip-flop architecture has been only hybridly integrated with silica-on-silicon integration technology exhibiting a total footprint of 45x12 mm2 and intra-Flip-Flop coupling waveguide of 2.5cm, limited at 5 Gb/s operation. Monolithic integration offers the possibility to fabricate multiple active and passive photonic components on a single chip at a close proximity towards, bearing promises for fast all-optical memories. Here, we present for the first time a monolithically integrated all-optical SR Flip-Flop with coupled master-slave SOA-MZI switches. The photonic chip is integrated on a 6x2 mm2 die as a part of a multi-project wafer run using library based components of a generic InP platform, fiber-pigtailed and fully packaged on a temperature controlled ceramic submount module with electrical contacts. The intra Flip-Flop coupling waveguide is 5 mm long, reducing the total footprint by two orders of magnitude. Successful flip flop functionality is evaluated at 10 Gb/s with clear open eye diagram, achieving error free operation with a power penalty of 4dB.

  2. An improved large signal model of InP HEMTs

    Science.gov (United States)

    Li, Tianhao; Li, Wenjun; Liu, Jun

    2018-05-01

    An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately. Project supported by the National Natural Science Foundation of China (No. 61331006).

  3. Wavelength-Adaptive Dehazing Using Histogram Merging-Based Classification for UAV Images

    Directory of Open Access Journals (Sweden)

    Inhye Yoon

    2015-03-01

    Full Text Available Since incoming light to an unmanned aerial vehicle (UAV platform can be scattered by haze and dust in the atmosphere, the acquired image loses the original color and brightness of the subject. Enhancement of hazy images is an important task in improving the visibility of various UAV images. This paper presents a spatially-adaptive dehazing algorithm that merges color histograms with consideration of the wavelength-dependent atmospheric turbidity. Based on the wavelength-adaptive hazy image acquisition model, the proposed dehazing algorithm consists of three steps: (i image segmentation based on geometric classes; (ii generation of the context-adaptive transmission map; and (iii intensity transformation for enhancing a hazy UAV image. The major contribution of the research is a novel hazy UAV image degradation model by considering the wavelength of light sources. In addition, the proposed transmission map provides a theoretical basis to differentiate visually important regions from others based on the turbidity and merged classification results.

  4. Wavelength-adaptive dehazing using histogram merging-based classification for UAV images.

    Science.gov (United States)

    Yoon, Inhye; Jeong, Seokhwa; Jeong, Jaeheon; Seo, Doochun; Paik, Joonki

    2015-03-19

    Since incoming light to an unmanned aerial vehicle (UAV) platform can be scattered by haze and dust in the atmosphere, the acquired image loses the original color and brightness of the subject. Enhancement of hazy images is an important task in improving the visibility of various UAV images. This paper presents a spatially-adaptive dehazing algorithm that merges color histograms with consideration of the wavelength-dependent atmospheric turbidity. Based on the wavelength-adaptive hazy image acquisition model, the proposed dehazing algorithm consists of three steps: (i) image segmentation based on geometric classes; (ii) generation of the context-adaptive transmission map; and (iii) intensity transformation for enhancing a hazy UAV image. The major contribution of the research is a novel hazy UAV image degradation model by considering the wavelength of light sources. In addition, the proposed transmission map provides a theoretical basis to differentiate visually important regions from others based on the turbidity and merged classification results.

  5. The Optimal Wavelengths for Light Absorption Spectroscopy Measurements Based on Genetic Algorithm-Particle Swarm Optimization

    Science.gov (United States)

    Tang, Ge; Wei, Biao; Wu, Decao; Feng, Peng; Liu, Juan; Tang, Yuan; Xiong, Shuangfei; Zhang, Zheng

    2018-03-01

    To select the optimal wavelengths in the light extinction spectroscopy measurement, genetic algorithm-particle swarm optimization (GAPSO) based on genetic algorithm (GA) and particle swarm optimization (PSO) is adopted. The change of the optimal wavelength positions in different feature size parameters and distribution parameters is evaluated. Moreover, the Monte Carlo method based on random probability is used to identify the number of optimal wavelengths, and good inversion effects of the particle size distribution are obtained. The method proved to have the advantage of resisting noise. In order to verify the feasibility of the algorithm, spectra with bands ranging from 200 to 1000 nm are computed. Based on this, the measured data of standard particles are used to verify the algorithm.

  6. Mode-Selective Wavelength Conversion Based on Four-Wave Mixing in a Multimode Silicon Waveguide

    DEFF Research Database (Denmark)

    Ding, Yunhong; Xu, Jing; Ou, Haiyan

    2013-01-01

    We report all-optical mode-selective wavelength conversion based on four-wave mixing in a multimode Si waveguide. A two-mode division multiplexing circuit using tapered directional coupler based (de)multiplexers is used for the application. Experimental results show clear eye-diagrams and moderate...

  7. Wavelength converter technology

    DEFF Research Database (Denmark)

    Kloch, Allan; Hansen, Peter Bukhave; Poulsen, Henrik Nørskov

    1999-01-01

    Wavelength conversion is important since it ensures full flexibility of the WDM network layer. Progress in optical wavelength converter technology is reviewed with emphasis on all-optical wavelength converter types based on semiconductor optical amplifiers.......Wavelength conversion is important since it ensures full flexibility of the WDM network layer. Progress in optical wavelength converter technology is reviewed with emphasis on all-optical wavelength converter types based on semiconductor optical amplifiers....

  8. Surface photovoltage study of InP and Zn3P2

    International Nuclear Information System (INIS)

    Thurgate, S.M.; Lacuesta, T.D.; Huck, N.R.

    1989-01-01

    The surface photovoltage spectra of InP and Zn 3 P 2 were measured using a Kelvin probe to determine the contact potential difference between the sample and the probe as a function of the wavelength of illuminating light. The features in the resulting spectra were found to be sensitive to ion bombardment. The photovoltage spectra obtained from the InP differed from previously reported SPC spectra in that it showed clear evidence of surface states (or interfacial states) at 0.86 eV and 0.68 eV above VBM. It was found that the features in the spectrum of Zn 3 P 2 were reduced by ion bombardment, but not removed completely, whereas the features in the InP spectra were completely removed. Exposure of the ion bombarded urface to air restored the features of Zn 3 P 2 but only produced a small change in the spectrum of the InP. The loss of features in the InP spectra can be attributed to damage in the substrate caused by the ion bombardment even though the oxide layer was not removed before the damage occurred. Zn 3 P 2 was not as sensitive to ion damage as InP. (orig.)

  9. Design of Polymer Wavelength Splitter 1310 nm/1550 nm Based on Multimode Interferences

    Directory of Open Access Journals (Sweden)

    V. Prajzler

    2010-12-01

    Full Text Available We report about design of 1x2 1310/1550 nm optical wavelength division multiplexer based on polymer waveguides. The polymer splitter was designed by using RSoft software based on beam propagation method. Epoxy novolak resin polymer was used as core waveguides layer, silicon substrate with silica layer was used as buffer layer and polymethylmethacrylate was used as protection cover layer. The simulation shows that the output energy for the fundamental mode is 67.1 % for 1310 nm and 67.8 % for 1550 nm wavelength.

  10. High-power dual-wavelength external-Cavity diode laser based on tapered amplifier with tunable terahertz frequency difference

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2011-01-01

    Tunable dual-wavelength operation of a diode laser system based on a tapered diode amplifier with double-Littrow external-cavity feedback is demonstrated around 800nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5:0 THz......, this is the highest output power from a dual-wavelength diode laser system operating with tunable terahertz frequency difference. © 2011 Optical Society of America....

  11. Realization of OSW/AWG-based bipolar wavelength time optical CDMA for wired wireless transmissions

    Science.gov (United States)

    Yen, Chih-Ta; Huang, Jen-Fa

    2009-01-01

    This study proposes a novel radio-over-fiber (RoF) system using two-dimensional (2-D) optical code-division multiple-access (OCDMA) scheme using pseudorandom (PN) codes for the time-spreading and wavelength-hopping ( t-spreading/ λ-hopping) codes. The 2-D system is implemented using optical switches (OSWs) and arrayed-waveguide grating (AWG) routers. By constructing 2-D codes using bipolar PN codes rather than unipolar codes provides a significant increase in the maximum permissible number of active radio base stations (RBSs). In general, the phase-induced intensity noise (PIIN) generated at high optical intensities significantly degrades the performance of a conventional multi-wavelength scheme. However, the OSW-based time-spreading method employed in the current 2-D OCDMA scheme effectively suppresses the PIIN effect. Additionally, multiple-access interference (MAI) is suppressed by the use of a wavelength/time balanced detector structure in the network receivers. The numerical evaluation results demonstrate that under PIIN- and MAI-limited conditions, the proposed system outperforms a conventional multi-wavelength OCDMA scheme by using the spectral spreading scheme to suppress beating noise. Especially, the t-spreading encoder/decoder (codec) groups share the same wavelength codec and the overall complexity is reduced and system network becomes more compact.

  12. Thermal crosstalk investigation in an integrated InP multiwavelength laser

    NARCIS (Netherlands)

    Gilardi, G.; Wale, M.J.; Smit, M.K.

    2012-01-01

    We numerically investigate the thermal crosstalk effects in an integrated InP multiwavelength laser. The multiwavelength laser under investigation consists of a number of Distributed Bragg Reflector lasers and an Arrayed Waveguide Grating. Each laser generates a fixed wavelength and the Arrayed

  13. InP integrated photonics : state of the art and future directions

    NARCIS (Netherlands)

    Williams, Kevin

    2017-01-01

    InP integrated circuits enable transceiver technologies with more than 200Gb/s per wavelength and 2Tb/s per fiber. Advances in monolithic integration are poised to reduce energy. remove assembly complexity, and sustain future year-on-year performance increases.

  14. Mid-IR optical properties of silicon doped InP

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Han, Li; Norrman, Kion

    2017-01-01

    of growth conditions on the optical and electrical properties of silicon doped InP (InP:Si) in the wavelength range from 3 to 40 μm was studied. The carrier concentration of up to 3.9 × 1019 cm-3 is achieved by optimizing the growth conditions. The dielectric function, effective mass of electrons and plasma...

  15. Switching dynamics in InP photonic-crystal nanocavity

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel

    2016-01-01

    In this paper, we presented switching dynamic investigations on an InP photonic-crystal (PhC) nanocavity structure using homodyne pump-probe measurements. The measurements were compared with simulations based on temporal nonlinear coupled mode theory and carrier rate equations for the dynamics of...

  16. Time-stretch microscopy based on time-wavelength sequence reconstruction from wideband incoherent source

    International Nuclear Information System (INIS)

    Zhang, Chi; Xu, Yiqing; Wei, Xiaoming; Tsia, Kevin K.; Wong, Kenneth K. Y.

    2014-01-01

    Time-stretch microscopy has emerged as an ultrafast optical imaging concept offering the unprecedented combination of the imaging speed and sensitivity. However, dedicated wideband and coherence optical pulse source with high shot-to-shot stability has been mandated for time-wavelength mapping—the enabling process for ultrahigh speed wavelength-encoded image retrieval. From the practical point of view, exploiting methods to relax the stringent requirements (e.g., temporal stability and coherence) for the source of time-stretch microscopy is thus of great value. In this paper, we demonstrated time-stretch microscopy by reconstructing the time-wavelength mapping sequence from a wideband incoherent source. Utilizing the time-lens focusing mechanism mediated by a narrow-band pulse source, this approach allows generation of a wideband incoherent source, with the spectral efficiency enhanced by a factor of 18. As a proof-of-principle demonstration, time-stretch imaging with the scan rate as high as MHz and diffraction-limited resolution is achieved based on the wideband incoherent source. We note that the concept of time-wavelength sequence reconstruction from wideband incoherent source can also be generalized to any high-speed optical real-time measurements, where wavelength is acted as the information carrier

  17. Analysis of a wavelength selectable cascaded DFB laser based on the transfer matrix method

    International Nuclear Information System (INIS)

    Xie Hongyun; Chen Liang; Shen Pei; Sun Botao; Wang Renqing; Xiao Ying; You Yunxia; Zhang Wanrong

    2010-01-01

    A novel cascaded DFB laser, which consists of two serial gratings to provide selectable wavelengths, is presented and analyzed by the transfer matrix method. In this method, efficient facet reflectivity is derived from the transfer matrix built for each serial section and is then used to simulate the performance of the novel cascaded DFB laser through self-consistently solving the gain equation, the coupled wave equation and the current continuity equations. The simulations prove the feasibility of this kind of wavelength selectable laser and a corresponding designed device with two selectable wavelengths of 1.51 μm and 1.53 μm is realized by experiments on InP-based multiple quantum well structure. (semiconductor devices)

  18. Efficient IP Traffic over Optical Network Based on Wavelength Translation Switching

    DEFF Research Database (Denmark)

    Jha, Vikas; Kalia, Kartik; Chowdhary, Bhawani Shankar

    2016-01-01

    With the advent of TCP/IP protocol suite the overall era of communication technologies had been redefined. Now, we can’t ignore the presence of huge amount of IP traffic; data, voice or video increasing day by day creating more pressure on existing communicating media and supporting back bone....... With the humongous popularity of Internet the overall traffic on Internet has the same story. Focusing on transmission of IP traffic in an optical network with signals remaining in their optical nature generated at particular wavelength, proposed is the switching of optically generated IP packets through optical...... cross connects based on translation of wavelength when an IP packet is crossing the optical cross connect. Adding the concepts of layer 3 routing protocols along with the wavelength translation scheme, will help in spanning the overall optical network for a larger area....

  19. Bolometric-Effect-Based Wavelength-Selective Photodetectors Using Sorted Single Chirality Carbon Nanotubes

    Science.gov (United States)

    Zhang, Suoming; Cai, Le; Wang, Tongyu; Shi, Rongmei; Miao, Jinshui; Wei, Li; Chen, Yuan; Sepúlveda, Nelson; Wang, Chuan

    2015-01-01

    This paper exploits the chirality-dependent optical properties of single-wall carbon nanotubes for applications in wavelength-selective photodetectors. We demonstrate that thin-film transistors made with networks of carbon nanotubes work effectively as light sensors under laser illumination. Such photoresponse was attributed to photothermal effect instead of photogenerated carriers and the conclusion is further supported by temperature measurements. Additionally, by using different types of carbon nanotubes, including a single chirality (9,8) nanotube, the devices exhibit wavelength-selective response, which coincides well with the absorption spectra of the corresponding carbon nanotubes. This is one of the first reports of controllable and wavelength-selective bolometric photoresponse in macroscale assemblies of chirality-sorted carbon nanotubes. The results presented here provide a viable route for achieving bolometric-effect-based photodetectors with programmable response spanning from visible to near-infrared by using carbon nanotubes with pre-selected chiralities. PMID:26643777

  20. MEMS-based wavelength and orbital angular momentum demultiplexer for on-chip applications

    DEFF Research Database (Denmark)

    Lyubopytov, Vladimir; Porfirev, Alexey P.; Gurbatov, Stanislav O.

    2017-01-01

    Summary form only given. We demonstrate a new tunable MEMS-based WDM&OAM Fabry-Pérot filter for simultaneous wavelength (WDM) and Orbital Angular Momentum (OAM) (de)multiplexing. The WDM&OAM filter is suitable for dense on-chip integration and dedicated for the next generation of optical...

  1. High-reflectance La/B-based multilayer mirror for 6.x  nm wavelength

    NARCIS (Netherlands)

    Kuznetsov, Dmitry; Yakshin, Andrey; Sturm, Jacobus Marinus; van de Kruijs, Robbert Wilhelmus Elisabeth; Louis, Eric; Bijkerk, Frederik

    2015-01-01

    We report a hybrid thin-film deposition procedure to significantly enhance the reflectivity of La/B-based multilayer structures. This is of relevance for applications of multilayer optics at 6.7-nm wavelength and beyond. Such multilayers showed a reflectance of 64.1% at 6.65 nm measured at

  2. Mode-selective wavelength conversion based on four-wave mixing in a multimode silicon waveguide

    DEFF Research Database (Denmark)

    Ding, Yunhong; Xu, Jing; Ou, Haiyan

    2014-01-01

    to phase mismatch. A two-mode division multiplexing circuit with tapered directional coupler based (de)multiplexers and a multimode waveguide is designed and fabricated for this application. Experimental results show clear eye-diagrams and moderate power penalties for the wavelength conversion of both...

  3. Upper atmosphere research at INPE

    International Nuclear Information System (INIS)

    Clemesha, B.R.

    1984-01-01

    Upper atmosphere research at INPE is mainly concerned with the chemistry and dynamics of the stratosphere, upper mesosphere and lower thermosphere, and the middle thermosphere. Experimental work includes lidar observations of the stratospheric aerosol, measurements of stratospheric ozone by Dobson spectrophotometers and by balloon and rocket-borne sondes, lidar measurements of atmospheric sodium, and photometric observations of O, O 2 , OH and Na emissions, including interferrometric measurements of the OI6300 emission for the purpose of determing thermospheric winds and temperature. The airglow observations also include measurements of a number of emissions produced by the precipitation of energetic neutral particles generated by charge exchange in the ring current. Some recent results of INPE's upper atmosphere program are presented. (Author) [pt

  4. Electrochemical formation of InP porous nanostructures and its application to amperometric chemical sensors

    International Nuclear Information System (INIS)

    Sato, Taketomo; Mizohata, Akinori; Fujino, Toshiyuki; Hashizume, Tamotsu

    2008-01-01

    In this paper, we report the electrochemical formation of the InP porous nanostructures and their feasibility for the application to the amperometric chemical sensors. Our two step electrochemical process consists of the pore formation on a (001) n-type InP substrate and the subsequent etching of pore walls caused by changing the polarity of the InP electrode in a HCl-based electrolyte. By applying the anodic bias to the InP electrode, the high-density array of uniform nanopores was formed on the surface. Next, the cathodic bias was applied to the porous sample to reduce the wall thickness by cathodic decomposition of InP, where the thickness of InP nanowall decreased uniformly along the entire depth of the porous layer. From the amperometric measurements of the porous electrode, it was found that the electrocatalytic activity was much higher than that of the planar electrode. Furthermore, the current sensitivity for the H 2 O 2 detection was much enhanced after the cathodic decomposition process. The InP porous nanostructure formed by the present process is one of the promising structures for the application to the semiconductor-based bio/chemical sensors. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Highly strained InAlP/InGaAs-based coupled double quantum wells on InP substrates

    Science.gov (United States)

    Gozu, Shin-ichiro; Mozume, Teruo

    2018-05-01

    InAlP/InGaAs based coupled double quantum wells (CDQWs) are proposed for optelectronic devices utilizing intersubband transitions. The aim of the proposed CDQW structure was to reduce the Al volume as compared with that in InGaAs/AlAsSb(AlAs/InAlAs) based CDQWs. By careful consideration of the band gap energy as well as conduction band offset and lattice constants for III–V materials, highly strained InAlP was chosen as the barrier material. With the appropriate CDQW structure and under the optimized growth conditions, proposed CDQWs exhibited clear X-ray diffraction satellite peaks, and almost identical optical absorption spectrum as compared with the InGaAs/AlAs/InAlAs CDQWs.

  6. Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP

    DEFF Research Database (Denmark)

    Clausen, Thomas; Leistiko, Otto

    1998-01-01

    We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area...... resulting in high values of the specific contact resistance to p-InP. For n(-)-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V....

  7. Wavelength selection-based nonlinear calibration for transcutaneous blood glucose sensing using Raman spectroscopy

    Science.gov (United States)

    Dingari, Narahara Chari; Barman, Ishan; Kang, Jeon Woong; Kong, Chae-Ryon; Dasari, Ramachandra R.; Feld, Michael S.

    2011-01-01

    While Raman spectroscopy provides a powerful tool for noninvasive and real time diagnostics of biological samples, its translation to the clinical setting has been impeded by the lack of robustness of spectroscopic calibration models and the size and cumbersome nature of conventional laboratory Raman systems. Linear multivariate calibration models employing full spectrum analysis are often misled by spurious correlations, such as system drift and covariations among constituents. In addition, such calibration schemes are prone to overfitting, especially in the presence of external interferences that may create nonlinearities in the spectra-concentration relationship. To address both of these issues we incorporate residue error plot-based wavelength selection and nonlinear support vector regression (SVR). Wavelength selection is used to eliminate uninformative regions of the spectrum, while SVR is used to model the curved effects such as those created by tissue turbidity and temperature fluctuations. Using glucose detection in tissue phantoms as a representative example, we show that even a substantial reduction in the number of wavelengths analyzed using SVR lead to calibration models of equivalent prediction accuracy as linear full spectrum analysis. Further, with clinical datasets obtained from human subject studies, we also demonstrate the prospective applicability of the selected wavelength subsets without sacrificing prediction accuracy, which has extensive implications for calibration maintenance and transfer. Additionally, such wavelength selection could substantially reduce the collection time of serial Raman acquisition systems. Given the reduced footprint of serial Raman systems in relation to conventional dispersive Raman spectrometers, we anticipate that the incorporation of wavelength selection in such hardware designs will enhance the possibility of miniaturized clinical systems for disease diagnosis in the near future. PMID:21895336

  8. Characteristics of withstanding radiation damage of InP crystals and devices

    International Nuclear Information System (INIS)

    Yamaguchi, Masafumi; Ando, Koshi

    1988-01-01

    Recently, the authors discovered that the characteristics of with standing radiation damage of InP crystals and devices (solar cells) are superior to those of Si and GaAs crystals and devices. Also the restoration phenomena at room temperature of radiation deterioration and the accelerated anneal phenomena by light irradiation and the injection of other minority, carriers in InP system devices were found. Such excellent characteristics suggested that InP devices are promising for the use in space. In this paper, taking an example of solar cells, the radiation resistance characteristics and their mechanism of InP crystals and devices are reported, based on the results of analysis by deep level transient spectroscopy and others. In InP solar cells, the high efficiency of photoelectric conversion was maintained even in the high dose irradiation of 1 MeV electron beam. As the carrier concentration in InP crystals is higher, they are stronger against radiation. With the increase of carrier concentration, the rate of anneal of radiation deterioration at room temperature increased. The accelerated anneal effect by minority carrier injection was remarkable in n + -p junction cells. The excellent characteristics of InP crystals are due to the formation of Frenkel defects of P and their instability. (K.I.)

  9. A genetic algorithm-based framework for wavelength selection on sample categorization.

    Science.gov (United States)

    Anzanello, Michel J; Yamashita, Gabrielli; Marcelo, Marcelo; Fogliatto, Flávio S; Ortiz, Rafael S; Mariotti, Kristiane; Ferrão, Marco F

    2017-08-01

    In forensic and pharmaceutical scenarios, the application of chemometrics and optimization techniques has unveiled common and peculiar features of seized medicine and drug samples, helping investigative forces to track illegal operations. This paper proposes a novel framework aimed at identifying relevant subsets of attenuated total reflectance Fourier transform infrared (ATR-FTIR) wavelengths for classifying samples into two classes, for example authentic or forged categories in case of medicines, or salt or base form in cocaine analysis. In the first step of the framework, the ATR-FTIR spectra were partitioned into equidistant intervals and the k-nearest neighbour (KNN) classification technique was applied to each interval to insert samples into proper classes. In the next step, selected intervals were refined through the genetic algorithm (GA) by identifying a limited number of wavelengths from the intervals previously selected aimed at maximizing classification accuracy. When applied to Cialis®, Viagra®, and cocaine ATR-FTIR datasets, the proposed method substantially decreased the number of wavelengths needed to categorize, and increased the classification accuracy. From a practical perspective, the proposed method provides investigative forces with valuable information towards monitoring illegal production of drugs and medicines. In addition, focusing on a reduced subset of wavelengths allows the development of portable devices capable of testing the authenticity of samples during police checking events, avoiding the need for later laboratorial analyses and reducing equipment expenses. Theoretically, the proposed GA-based approach yields more refined solutions than the current methods relying on interval approaches, which tend to insert irrelevant wavelengths in the retained intervals. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

  10. All-silicon-based nano-antennas for wavelength and polarization demultiplexing.

    Science.gov (United States)

    Panmai, Mingcheng; Xiang, Jin; Sun, Zhibo; Peng, Yuanyuan; Liu, Hongfeng; Liu, Haiying; Dai, Qiaofeng; Tie, Shaolong; Lan, Sheng

    2018-05-14

    We propose an all-silicon-based nano-antenna that functions as not only a wavelength demultiplexer but also a polarization one. The nano-antenna is composed of two silicon cuboids with the same length and height but with different widths. The asymmetric structure of the nano-antenna with respect to the electric field of the incident light induced an electric dipole component in the propagation direction of the incident light. The interference between this electric dipole and the magnetic dipole induced by the magnetic field parallel to the long side of the cuboids is exploited to manipulate the radiation direction of the nano-antenna. The radiation direction of the nano-antenna at a certain wavelength depends strongly on the phase difference between the electric and magnetic dipoles interacting coherently, offering us the opportunity to realize wavelength demultiplexing. By varying the polarization of the incident light, the interference of the magnetic dipole induced by the asymmetry of the nano-antenna and the electric dipole induced by the electric field parallel to the long side of the cuboids can also be used to realize polarization demultiplexing in a certain wavelength range. More interestingly, the interference between the dipole and quadrupole modes of the nano-antenna can be utilized to shape the radiation directivity of the nano-antenna. We demonstrate numerically that radiation with adjustable direction and high directivity can be realized in such a nano-antenna which is compatible with the current fabrication technology of silicon chips.

  11. Tunable multi-wavelength polymer laser based on a triangular-lattice photonic crystal structure

    International Nuclear Information System (INIS)

    Huang, Wenbin; Pu, Donglin; Qiao, Wen; Wan, Wenqiang; Liu, Yanhua; Ye, Yan; Wu, Shaolong; Chen, Linsen

    2016-01-01

    A continuously tunable multi-wavelength polymer laser based on a triangular-lattice photonic crystal cavity is demonstrated. The triangular-lattice resonator was initially fabricated through multiple interference exposure and was then replicated into a low refractive index polymer via UV-nanoimprinting. The blend of a blue-emitting conjugated polymer and a red-emitting one was used as the gain medium. Three periods in the scalene triangular-lattice structure yield stable tri-wavelength laser emission (625.5 nm, 617.4 nm and 614.3 nm) in six different directions. A uniformly aligned liquid crystal (LC) layer was incorporated into the cavity as the top cladding layer. Upon heating, the orientation of LC molecules and thus the effective refractive index of the lasing mode changes which continuously shifts the lasing wavelength. A maximum tuning range of 12.2 nm was observed for the lasing mode at 625.5 nm. This tunable tri-wavelength polymer laser is simple constructed and cost-effective. It may find application in the fields of biosensors and photonic integrated circuits. (paper)

  12. Wide and Fast Wavelength-Swept Fiber Laser Based on Dispersion Tuning for Dynamic Sensing

    Directory of Open Access Journals (Sweden)

    Shinji Yamashita

    2009-01-01

    Full Text Available We have developed a unique wide and fast wavelength-swept fiber laser for dynamic and accurate fiber sensing. The wavelength tuning is based on the dispersion tuning technique, which simply modulates the loss/gain in the dispersive laser cavity. By using wideband semiconductor optical amplifiers (SOAs, the sweep range could be as wide as ∼180 nm. Since the cavity contains no mechanical components, such as tunable filters, we could achieve very high sweep rate, as high as ∼200 kHz. We have realized the swept lasers at three wavelength bands, 1550 nm, 1300 nm, and 800 nm, using SOAs along with erbium-doped fiber amplifiers (EDFAs, and in two laser configurations, ring and linear ones. We also succeeded in applying the swept laser for a dynamic fiber-Bragg grating (FBG sensor system. In this paper, we review our researches on the wide and fast wavelength-swept fiber lasers.

  13. Optimization of the wavelength shifter ratio in a polystyrene based plastic scintillator through energy spectrum analysis

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ye Won; Kim, Myung Soo; Yoo, Hyun Jun; Lee, Dae Hee; Cho, Gyu Seong [Dept. of Nuclear and Quantum Engineering, KAIST, Daejeon (Korea, Republic of); Moon, Myung Kook [Neutron Instrumentation Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2017-02-15

    The scintillation efficiency of the polystyrene based plastic scintillator depends on the ratio of the wavelength shifters, organic fluors (PPO and POPOP). Thus, 24 samples of the plastic scintillator were fabricated in order to find out the optimum ratio of the wavelength shifters in the plastic scintillator. The fabricated plastic scintillators were trimmed through a cutting and polishing process. They were used in gamma energy spectrum measurement with the {sup 137}Cs emitting monoenergy photon with 662 keV for the comparison of the scintillation efficiency. As a result, it was found out that the scintillator sample with 1.00 g of PPO (2,5-Diphenyloxazole) and 0.50 g of POPOP (1,4-Bis(5-phnyl-2oxidazolyl)benzene) dissolved in 100 g of styrene solution has the optimum ratio in terms of the light yield of the polystyrene based plastic scintillator.

  14. Silicon based mechanic-photonic wavelength converter for infrared photo-detection

    Science.gov (United States)

    Rudnitsky, Arkady; Agdarov, Sergey; Gulitsky, Konstantin; Zalevsky, Zeev

    2017-06-01

    In this paper we present a new concept to realize a mechanic-photonic wavelength converter in silicon chip by construction of nanorods and by modulating the input illumination at temporal frequency matched to the mechanic resonance of the nanorods. The use case is to realize an infrared photo detector in silicon which is not based on absorption but rather on the mechanical interaction of the nanorods with the incoming illumination.

  15. Speckle-based at-wavelength metrology of x-ray optics at Diamond Light Source

    Science.gov (United States)

    Wang, Hongchang; Zhou, Tunhe; Kashyap, Yogesh; Sawhney, Kawal

    2017-08-01

    To achieve high resolution and sensitivity on the nanometer scale, further development of X-ray optics is required. Although ex-situ metrology provides valuable information about X-ray optics, the ultimate performance of X-ray optics is critically dependent on the exact nature of the working conditions. Therefore, it is equally important to perform in-situ metrology at the optics' operating wavelength (`at-wavelength' metrology) to optimize the performance of X-ray optics and correct and minimize the collective distortions of the upstream beamline optics, e.g. monochromator, windows, etc. Speckle-based technique has been implemented and further improved at Diamond Light Source. We have demonstrated that the angular sensitivity for measuring the slope error of an optical surface can reach an accuracy of two nanoradians. The recent development of the speckle-based at-wavelength metrology techniques will be presented. Representative examples of the applications of the speckle-based technique will also be given - including optimization of X-ray mirrors and characterization of compound refraction lenses. Such a high-precision metrology technique will be extremely beneficial for the manufacture and in-situ alignment/optimization of X-ray mirrors for next-generation synchrotron beamlines.

  16. Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

    International Nuclear Information System (INIS)

    Yatskiv, R.; Zdansky, K.; Pekarek, L.

    2009-01-01

    Particle detectors made with a guard-ring (GR) electrode, operating at room temperature, have been studied. The detectors were fabricated on a semi-insulating InP crystal co-doped with Ti and Zn, grown using the Liquid-Encapsulated Czochralski technique. The detection performance of the particle detectors was evaluated using alpha particles emitted from a 241 Am source. Good detector performance has been achieved with measured charge-collection efficiencies of 99.9% and 98.2% and FWHM energy resolutions of 0.9% and 2.1%. The measurements were carried out at 230 K for negative and positive bias voltages of the irradiated electrode. The good performance is due to the SI properties of the material which has been achieved by doping with suitable Ti atoms and co-doping with a low concentration of Zn acceptors, sufficient to fully compensate shallow donors. Electron and hole charge-collection efficiencies (CCEs) were measured at various temperatures. At room temperature, unlike at low temperature (T<250 K), the hole CCE was better than the electron CCE, which can be explained by the presence of electron-trapping centres in InP with a temperature-dependent capture rate.

  17. Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

    Science.gov (United States)

    Bhusal, L.; Freundlich, A.

    2007-01-01

    Thermophotovoltaic (TPV) conversion of IR radiation emanating from a radioisotope heat source is under consideration for deep space exploration. Ideally, for radiator temperatures of interest, the TPV cell must convert efficiently photons in the 0.4-0.7 eV spectral range. Best experimental data for single junction cells are obtained for lattice-mismatched 0.55 eV InGaAs based devices. It was suggested, that a tandem InGaAs based TPV cell made by monolithically combining two or more lattice mismatched InGaAs subcells on InP would result in a sizeable efficiency improvement. However, from a practical standpoint the implementation of more than two subcells with lattice mismatch systems will require extremely thick graded layers (defect filtering systems) to accommodate the lattice mismatch between the sub-cells and could detrimentally affect the recycling of the unused IR energy to the emitter. A buffer structure, consisting of various InPAs layers, is incorporated to accommodate the lattice mismatch between the high and low bandgap subcells. There are evidences that the presence of the buffer structure may generate defects, which could extend down to the underlying InGaAs layer. The unusual large band gap lowering observed in GaAs(1-x)N(x) with low nitrogen fraction [1] has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for long-wavelength optoelectronic devices (e.g. IR lasers, detector, solar cells) [2-7]. Lattice matched Ga1-yInyNxAs1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices. This novel quaternary alloy allows the tuning of the band gap from 1.42 eV to below 1 eV on GaAs and band gap as low as 0.6eV when strained to InP, but it has its own limitations. To achieve such a low band gap using the quaternary Ga1-yInyNxAs1-x, either it needs to be strained on InP, which creates further

  18. Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

    Science.gov (United States)

    Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

    2013-03-22

    We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

  19. Quasidistributed temperature sensor based on dense wavelength-division multiplexing optical fiber delay

    Science.gov (United States)

    Su, Jun; Yang, Ning; Fan, Zhiqiang; Qiu, Qi

    2017-10-01

    We report on a fiber-optic delay-based quasidistributed temperature sensor with high precision. The device works by detecting the delay induced by the temperature instead of the spectrum. To analyze the working principle of this sensor, the thermal dependence of the fiber-optic delay was theoretically investigated and the delay-temperature coefficient was measured to be 42.2 ps/km°C. In this sensor, quasidistributed measurement of temperature could be easily realized by dense wavelength-division multiplexing and wavelength addressing. We built and tested a prototype quasidistributed temperature sensor with eight testing points equally distributed along a 32.61-km-long fiber. The experimental results demonstrate an average error of economic temperature measurements.

  20. Simultaneous wavelength and orbital angular momentum demultiplexing using tunable MEMS-based Fabry-Perot filter

    DEFF Research Database (Denmark)

    Lyubopytov, Vladimir; Porfirev, Alexey P.; Gurbatov, Stanislav O.

    2017-01-01

    In this paper, we experimentally demonstrate simultaneous wavelength and orbital angular momentum (OAM) multiplexing/demultiplexing of 10 Gbit/s data streams using a new on-chip micro-component-tunable MEMS-based Fabry-Perot filter integrated with a spiral phase plate. In the experiment, two......, maximum power penalties at the HD-FEC BER threshold relative to the 0.8 nm wavelength spacing read 0.83, 0.84 and 1.15 dB when multiplexing a Gaussian beam and OAM beams of 1st, 2nd and 3rd orders respectively. The novelty and impact of the proposed filter design is in providing practical, integrable...

  1. InAs quantum wires on InP substrate for VCSEL applications

    OpenAIRE

    Lamy , Jean-Michel; Paranthoën , Cyril; Levallois , Christophe; Nakkar , Abdulhadi; Folliot , Hervé; Dehaese , Olivier; Le Corre , Alain; Loualiche , Slimane; Castany , Olivier; Dupont , Laurent

    2008-01-01

    International audience; Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL lase...

  2. High Efficiency InP Solar Cells from Low Toxicity Tertiarybutylphosphine

    Science.gov (United States)

    Hoffman, Richard W., Jr.; Fatemi, Navid S.; Wilt, David M.; Jenkins, Phillip P.; Brinker, David J.; Scheiman, David A.

    1994-01-01

    Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.

  3. Rigorous Progress on Algorithms Based Routing and Wavelength Assignment in Trans-Egypt Network (TEGYNET) Management

    OpenAIRE

    Abd El–Naser A. Mohammed; Ahmed Nabih Zaki Rashed; Osama S. Fragallah; Mohamed G. El-Abyad

    2013-01-01

    In simple wavelength-division multiplexed (WDM) networks, a connection must be established along a route using a common wavelength on all of the links along the route. The introduction of wavelength converters into WDM cross connects increases the hardware cost and complexity. Given a set of connection requests, the routing and wavelength assignment problem involves finding a route (routing) and assigning a wavelength to each request. This paper has presented the WDM technology is being exten...

  4. Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires

    International Nuclear Information System (INIS)

    Yan, Xin; Zhang, Xia; Li, Junshuai; Cui, Jiangong; Ren, Xiaomin

    2014-01-01

    The growth and optical properties of InP and InP/InAs nanostructures on GaAs nanowires are investigated. InP quantum well and quantum dots (QDs) are formed on the sidewalls of GaAs nanowires successively with increasing the deposition time of InP. The GaAs/InP nanowire heterostructure exhibits a type-II band alignment. The wavelength of the InP quantum well is in the range of 857–892 nm at 77 K, which means that the quantum well is nearly fully strained. The InP quantum dot, which has a bow-shaped cross section, exhibits dislocation-free pure zinc blende structure. Stranski-Krastanow InAs quantum dots are subsequently formed on the GaAs/InP nanowire core-shell structure. The InAs quantum dots are distributed over the middle part of the nanowire, indicating that the In atoms contributing to the quantum dots mainly come from the vapor rather than the substrate. The longest emission wavelength obtained from the InAs QDs is 1039 nm at 77 K. The linewidth is as narrow as 46.3 meV, which is much narrower than those on planar InP substrates and wurtzite InP nanowires, suggesting high-crystal-quality, phase-purity, and size-uniformity of quantum dots

  5. Optimisation of 40 Gb/s wavelength converters based on four-wave mixing in a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Schulze, K.; Petersen, Martin Nordal; Herrera, J.

    2007-01-01

    The optimum operating powers and wavelengths for a 40 Gb/s wavelength converter based on four-wave mixing in a semiconductor 14 optical amplifier are inferred from experimental results. From these measurements, some general rules of thumb are derived for this kind of devices. Generally, the optim...

  6. Fabrication of InP-pentacene inorganic-organic hybrid heterojunction using MOCVD grown InP for photodetector application

    Science.gov (United States)

    Sarkar, Kalyan Jyoti; Pal, B.; Banerji, P.

    2018-04-01

    We fabricated inorganic-organic hybrid heterojunction between indium phosphide (InP) and pentacene for photodetector application. InP layer was grown on n-Si substrate by atmospheric pressure metal organic chemical vapour deposition (MOCVD) technique. Morphological properties of InP and pentacene thin film were characterized by atomic force microscopy (AFM). Current-voltage characteristics were investigated in dark and under illumination condition at room temperature. During illumination, different wavelengths of visible and infrared light source were employed to perform the electrical measurement. Enhancement of photocurrent was observed with decreasing in wavelength of incident photo radiation. Ideality factor was found to be 1.92. High rectification ratio of 225 was found at ± 3 V in presence of infrared light source. This study provides new insights of inorganic-organic hybrid heterojunction for broadband photoresponse in visible to near infrared (IR) region under low reverse bias condition.

  7. Colloidal PbS nanocrystals integrated to Si-based photonics for applications at telecom wavelengths

    Science.gov (United States)

    Humer, M.; Guider, R.; Jantsch, W.; Fromherz, T.

    2013-05-01

    In the last decade, Si based photonics has made major advances in terms of design, fabrication, and device implementation. But due to Silicon's indirect bandgap, it still remains a challenge to create efficient Si-based light emitting devices. In order to overcome this problem, an approach is to develop hybrid systems integrating light-emitting materials into Si. A promising class of materials for this purpose is the class of semiconducting nanocrystal quantum dots (NCs) that are synthesized by colloidal chemistry. As their absorption and emission wavelength depends on the dot size, which can easily be controlled during synthesis, they are extremely attractive as building blocks for nanophotonic applications. For applications in telecom wavelength, Lead chalcogenide colloidal NCs are optimum materials due to their unique optical, electronic and nonlinear properties. In this work, we experimentally demonstrate the integration of PbS nanocrystals into Si-based photonic structures like slot waveguides and ring resonators as optically pumped emitters for room temperature applications. In order to create such hybrid structures, the NCs were dissolved into polymer resists and drop cast on top of the device. Upon optical pumping, intense photoluminescence emission from the resonating modes is recorded at the output of the waveguide with transmission quality factors up to 14000. The polymer host material was investigated with respect to its ability to stabilize the NC's photoluminescence emission against degradation under ambient conditions. The waveguide-ring coupling efficiency was also investigated as function of the NCs concentrations blended into the polymer matrix. The integration of colloidal quantum dots into Silicon photonic structures as demonstrated in this work is a very versatile technique and thus opens a large range of applications utilizing the linear and nonlinear optical properties of PbS NCs at telecom wavelengths.

  8. Wavelength-tunable laser based on nonlinear dispersive-wave generation in a tapered optical waveguide

    DEFF Research Database (Denmark)

    2015-01-01

    The present invention relates to a method and a wavelength tunable laser comprising a first laser source configured to emit a first optical pulse having a pump wavelength, the first optical pulse being emitted in a first longitudinal direction. Furthermore, the wavelength tunable laser comprises...... a waveguide extending in the first longitudinal direction, the waveguide having longitudinally varying phase matching conditions, the waveguide being configured to generate a second optical pulse with a centre wavelength upon receiving the first optical pulse, wherein the wavelength tunable laser...... is configured to tune the centre wavelength of the second optical pulse by varying at least one pulse property of the first optical pulse....

  9. Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

    Science.gov (United States)

    Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

    2015-11-11

    The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

  10. Wurtzite InP nanowire arrays grown by selective area MOCVD

    International Nuclear Information System (INIS)

    Chu, Hyung-Joon; Stewart, Lawrence; Yeh, Ting-Wei; Dapkus, P.D.

    2010-01-01

    InP nanowires are a unique material phase because this normally zincblende material forms in the wurtzite crystal structure below a critical diameter owing to the contribution of sidewalls to the total formation energy. This may allow control of the carrier transport and optical properties of InP nanowires for applications such as nano scale transistors, lasers and detectors. In this work, we describe the fabrication of InP nanowire arrays by selective area growth using MOCVD in the diameter range where the wurtzite structure is formed. The spatial growth rate in selective area growth is modeled by a diffusion model for the precursors. The proposed model achieves an average error of 9%. Electron microscopy shows that the grown InP nanowires are in the wurtzite crystal phase with many stacking faults. The threshold diameter of the crystal phase transition of InP nanowires is larger than the thermodynamic estimation. In order to explain this tendency, we propose a surface kinetics model based on a 2 x 2 reconstruction. This model can explain the increased tendency for wurtzite nanowire formation on InP (111)A substrates and the preferred growth direction of binary III-V compound semiconductor nanowires. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices.

    Science.gov (United States)

    Sanatinia, Reza; Berrier, Audrey; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri; Anand, Srinivasan

    2015-10-16

    A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.

  12. InP quantum dots embedded in GaP: Optical properties and carrier dynamics

    International Nuclear Information System (INIS)

    Hatami, F.; Masselink, W.T.; Schrottke, L.; Tomm, J.W.; Talalaev, V.; Kristukat, C.; Goni, A.R.

    2003-01-01

    The optical emission and dynamics of carriers in Stranski-Krastanow self-organized InP quantum dots embedded in a GaP matrix are studied. InP deposited on GaP (001) using gas-source molecular-beam epitaxy forms quantum dots for InP coverage greater than 1.8 monolayers. Strong photoluminescence from the quantum dots is observed up to room temperature at about 2 eV; photoluminescence from the two-dimensional InP wetting layer is measured at about 2.2 eV. Modeling based on the 'model-solid theory' indicates that the band alignment for the InP quantum dots is direct and type I. Furthermore, low-temperature time-resolved photoluminescence measurements indicate that the carrier lifetime in the quantum dots is about 2 ns, typical for type-I quantum dots. Pressure-dependent photoluminescence measurements provide further evidence for a type-I band alignment for InP/GaP quantum dots at normal pressure with the GaP X states lying about 30 meV higher than the Γ states in the InP quantum dots, but indicate that they become type II under hydrostatic pressures of about 1.2 GPa

  13. Threshold-Based Multiple Optical Signal Selection Scheme for Free-Space Optical Wavelength Division Multiplexing Systems

    KAUST Repository

    Nam, Sung Sik; Alouini, Mohamed-Slim; Zhang, Lin; Ko, Young-Chai

    2017-01-01

    We propose a threshold-based multiple optical signal selection scheme (TMOS) for free-space optical wavelength division multiplexing systems. With this scheme, we can obtain higher spectral efficiency while reducing the possible complexity

  14. Speckle-based at-wavelength metrology of X-ray mirrors with super accuracy.

    Science.gov (United States)

    Kashyap, Yogesh; Wang, Hongchang; Sawhney, Kawal

    2016-05-01

    X-ray active mirrors, such as bimorph and mechanically bendable mirrors, are increasingly being used on beamlines at modern synchrotron source facilities to generate either focused or "tophat" beams. As well as optical tests in the metrology lab, it is becoming increasingly important to optimise and characterise active optics under actual beamline operating conditions. Recently developed X-ray speckle-based at-wavelength metrology technique has shown great potential. The technique has been established and further developed at the Diamond Light Source and is increasingly being used to optimise active mirrors. Details of the X-ray speckle-based at-wavelength metrology technique and an example of its applicability in characterising and optimising a micro-focusing bimorph X-ray mirror are presented. Importantly, an unprecedented angular sensitivity in the range of two nanoradians for measuring the slope error of an optical surface has been demonstrated. Such a super precision metrology technique will be beneficial to the manufacturers of polished mirrors and also in optimization of beam shaping during experiments.

  15. Speckle-based at-wavelength metrology of X-ray mirrors with super accuracy

    Energy Technology Data Exchange (ETDEWEB)

    Kashyap, Yogesh; Wang, Hongchang; Sawhney, Kawal, E-mail: kawal.sawhney@diamond.ac.uk [Diamond Light Source, Harwell Science and Innovation Campus, Didcot OX11 0DE (United Kingdom)

    2016-05-15

    X-ray active mirrors, such as bimorph and mechanically bendable mirrors, are increasingly being used on beamlines at modern synchrotron source facilities to generate either focused or “tophat” beams. As well as optical tests in the metrology lab, it is becoming increasingly important to optimise and characterise active optics under actual beamline operating conditions. Recently developed X-ray speckle-based at-wavelength metrology technique has shown great potential. The technique has been established and further developed at the Diamond Light Source and is increasingly being used to optimise active mirrors. Details of the X-ray speckle-based at-wavelength metrology technique and an example of its applicability in characterising and optimising a micro-focusing bimorph X-ray mirror are presented. Importantly, an unprecedented angular sensitivity in the range of two nanoradians for measuring the slope error of an optical surface has been demonstrated. Such a super precision metrology technique will be beneficial to the manufacturers of polished mirrors and also in optimization of beam shaping during experiments.

  16. Speckle-based at-wavelength metrology of X-ray mirrors with super accuracy

    International Nuclear Information System (INIS)

    Kashyap, Yogesh; Wang, Hongchang; Sawhney, Kawal

    2016-01-01

    X-ray active mirrors, such as bimorph and mechanically bendable mirrors, are increasingly being used on beamlines at modern synchrotron source facilities to generate either focused or “tophat” beams. As well as optical tests in the metrology lab, it is becoming increasingly important to optimise and characterise active optics under actual beamline operating conditions. Recently developed X-ray speckle-based at-wavelength metrology technique has shown great potential. The technique has been established and further developed at the Diamond Light Source and is increasingly being used to optimise active mirrors. Details of the X-ray speckle-based at-wavelength metrology technique and an example of its applicability in characterising and optimising a micro-focusing bimorph X-ray mirror are presented. Importantly, an unprecedented angular sensitivity in the range of two nanoradians for measuring the slope error of an optical surface has been demonstrated. Such a super precision metrology technique will be beneficial to the manufacturers of polished mirrors and also in optimization of beam shaping during experiments.

  17. Fine-filter method for Raman lidar based on wavelength division multiplexing and fiber Bragg grating.

    Science.gov (United States)

    Wang, Jun; Zheng, Jiao; Lu, Hong; Yan, Qing; Wang, Li; Liu, Jingjing; Hua, Dengxin

    2017-11-01

    Atmospheric temperature is one of the important parameters for the description of the atmospheric state. Most of the detection approaches to atmospheric temperature monitoring are based on rotational Raman scattering for better understanding atmospheric dynamics, thermodynamics, atmospheric transmission, and radiation. In this paper, we present a fine-filter method based on wavelength division multiplexing, incorporating a fiber Bragg grating in the visible spectrum for the rotational Raman scattering spectrum. To achieve high-precision remote sensing, the strong background noise is filtered out by using the secondary cascaded light paths. Detection intensity and the signal-to-noise ratio are improved by increasing the utilization rate of return signal form atmosphere. Passive temperature compensation is employed to reduce the temperature sensitivity of fiber Bragg grating. In addition, the proposed method provides a feasible solution for the filter system with the merits of miniaturization, high anti-interference, and high stability in the space-based platform.

  18. Broadband Polarization-Insensitive Wavelength Conversion Based on Non-Degenerate Four-Wave Mixing in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Pu, Minhao; Hu, Hao; Ji, Hua

    2012-01-01

    We experimentally demonstrate broadband polarization-insensitive one-to-two wavelength conversion of a 10-Gb/s DPSK data signal based on non-degenerate four-wave mixing in a silicon nanowire with bit-error rate measurements.......We experimentally demonstrate broadband polarization-insensitive one-to-two wavelength conversion of a 10-Gb/s DPSK data signal based on non-degenerate four-wave mixing in a silicon nanowire with bit-error rate measurements....

  19. Calibration-free wavelength-modulation spectroscopy based on a swiftly determined wavelength-modulation frequency response function of a DFB laser.

    Science.gov (United States)

    Zhao, Gang; Tan, Wei; Hou, Jiajia; Qiu, Xiaodong; Ma, Weiguang; Li, Zhixin; Dong, Lei; Zhang, Lei; Yin, Wangbao; Xiao, Liantuan; Axner, Ove; Jia, Suotang

    2016-01-25

    A methodology for calibration-free wavelength modulation spectroscopy (CF-WMS) that is based upon an extensive empirical description of the wavelength-modulation frequency response (WMFR) of DFB laser is presented. An assessment of the WMFR of a DFB laser by the use of an etalon confirms that it consists of two parts: a 1st harmonic component with an amplitude that is linear with the sweep and a nonlinear 2nd harmonic component with a constant amplitude. Simulations show that, among the various factors that affect the line shape of a background-subtracted peak-normalized 2f signal, such as concentration, phase shifts between intensity modulation and frequency modulation, and WMFR, only the last factor has a decisive impact. Based on this and to avoid the impractical use of an etalon, a novel method to pre-determine the parameters of the WMFR by fitting to a background-subtracted peak-normalized 2f signal has been developed. The accuracy of the new scheme to determine the WMFR is demonstrated and compared with that of conventional methods in CF-WMS by detection of trace acetylene. The results show that the new method provides a four times smaller fitting error than the conventional methods and retrieves concentration more accurately.

  20. MoS2-wrapped microfiber-based multi-wavelength soliton fiber laser

    Science.gov (United States)

    Lu, Feifei

    2017-11-01

    The single-, dual- and triple-wavelength passively mode-locked erbium-doped fiber lasers are demonstrated with MoS2 and polarization-dependent isolator (PD-ISO). The saturable absorber is fabricated by wrapping an MoS2 around a microfiber. The intracavity PD-ISO acts as a wavelength-tunable filter with a polarization controller (PC) by adjusting the linear birefringence. Single-wavelength mode-locked fiber laser can self-start with suitable pump power. With appropriate PC state, dual- and triple-wavelength operations can be observed when gains at different wavelengths reach a balance. It is noteworthy that dual-wavelength pulses exhibiting peak and dip sidebands, respectively, are demonstrated in the experiment. The proposed simple and multi-wavelength all-fiber conventional soliton lasers could possess potential applications in numerous fields, such as sensors, THz generations and optical communications.

  1. High-accuracy alignment based on atmospherical dispersion - technological approaches and solutions for the dual-wavelength transmitter

    International Nuclear Information System (INIS)

    Burkhard, Boeckem

    1999-01-01

    In the course of the progressive developments of sophisticated geodetic systems utilizing electromagnetic waves in the visible or near IR-range a more detailed knowledge of the propagation medium and coevally solutions of atmospherically induced limitations will become important. An alignment system based on atmospherical dispersion, called a dispersometer, is a metrological solution to the atmospherically induced limitations, in optical alignment and direction observations of high accuracy. In the dispersometer we are using the dual-wavelength method for dispersive air to obtain refraction compensated angle measurements, the detrimental impact of atmospheric turbulence notwithstanding. The principle of the dual-wavelength method utilizes atmospherical dispersion, i.e. the wavelength dependence of the refractive index. The difference angle between two light beams of different wavelengths, which is called the dispersion angle Δβ, is to first approximation proportional to the refraction angle: β IR ν(β blue - β IR ) = ν Δβ, this equation implies that the dispersion angle has to be measured at least 42 times more accurate than the desired accuracy of the refraction angle for the wavelengths used in the present dispersometer. This required accuracy constitutes one major difficulty for the instrumental performance in applying the dispersion effect. However, the dual-wavelength method can only be successfully used in an optimized transmitter-receiver combination. Beyond the above mentioned resolution requirement for the detector, major difficulties in instrumental realization arise in the availability of a suitable dual-wavelength laser light source, laser light modulation with a very high extinction ratio and coaxial emittance of mono-mode radiation at both wavelengths. Therefore, this paper focuses on the solutions of the dual-wavelength transmitter introducing a new hardware approach and a complete re-design of the in [1] proposed conception of the dual-wavelength

  2. Athermal and wavelength-trimmable photonic filters based on TiO₂-cladded amorphous-SOI.

    Science.gov (United States)

    Lipka, Timo; Moldenhauer, Lennart; Müller, Jörg; Trieu, Hoc Khiem

    2015-07-27

    Large-scale integrated silicon photonic circuits suffer from two inevitable issues that boost the overall power consumption. First, fabrication imperfections even on sub-nm scale result in spectral device non-uniformity that require fine-tuning during device operation. Second, the photonic devices need to be actively corrected to compensate thermal drifts. As a result significant amount of power is wasted if no athermal and wavelength-trimmable solutions are utilized. Consequently, in order to minimize the total power requirement of photonic circuits in a passive way, trimming methods are required to correct the device inhomogeneities from manufacturing and athermal solutions are essential to oppose temperature fluctuations of the passive/active components during run-time. We present an approach to fabricate CMOS backend-compatible and athermal passive photonic filters that can be corrected for fabrication inhomogeneities by UV-trimming based on low-loss amorphous-SOI waveguides with TiO2 cladding. The trimming of highly confined 10 μm ring resonators is proven over a free spectral range retaining athermal operation. The athermal functionality of 2nd-order 5 μm add/drop microrings is demonstrated over 40°C covering a broad wavelength interval of 60 nm.

  3. Terahertz-wave differential detection based on simultaneous dual-wavelength up-conversion

    Directory of Open Access Journals (Sweden)

    Yuma Takida

    2017-03-01

    Full Text Available We report a terahertz (THz-wave differential detection based on simultaneous dual-wavelength up-conversion in a nonlinear optical MgO:LiNbO3 crystal with optical and electronic THz-wave sources. The broadband parametric gain and noncollinear phase-matching of MgO:LiNbO3 provide efficient conversion from superposed THz waves to spatially distributed near-infrared (NIR beams to function as a dispersive THz-wave spectrometer without any additional dispersive element. We show that the μW-level THz waves from two independent sources, a 0.78-THz injection-seeded THz-wave parametric generator (is-TPG and a 1.14-THz resonant tunneling diode (RTD, are simultaneously up-converted to two NIR waves and then detected with two NIR photodetectors. By applying a balanced detection scheme to this dual-frequency detection, we demonstrate THz-wave differential imaging of maltose and polyethylene pellets in the transmission geometry. This dual-wavelength detection is applicable to more than three frequencies and broadband THz-wave radiation for real-time THz-wave spectroscopic detection and imaging.

  4. Nanoparticle discrimination based on wavelength and lifetime-multiplexed cathodoluminescence microscopy.

    Science.gov (United States)

    Garming, Mathijs W H; Weppelman, I Gerward C; de Boer, Pascal; Martínez, Felipe Perona; Schirhagl, Romana; Hoogenboom, Jacob P; Moerland, Robert J

    2017-08-31

    Nanomaterials can be identified in high-resolution electron microscopy images using spectrally-selective cathodoluminescence. Capabilities for multiplex detection can however be limited, e.g., due to spectral overlap or availability of filters. Also, the available photon flux may be limited due to degradation under electron irradiation. Here, we demonstrate single-pass cathodoluminescence-lifetime based discrimination of different nanoparticles, using a pulsed electron beam. We also show that cathodoluminescence lifetime is a robust parameter even when the nanoparticle cathodoluminescence intensity decays over an order of magnitude. We create lifetime maps, where the lifetime of the cathodoluminescence emission is correlated with the emission intensity and secondary-electron images. The consistency of lifetime-based discrimination is verified by also correlating the emission wavelength and the lifetime of nanoparticles. Our results show how cathodoluminescence lifetime provides an additional channel of information in electron microscopy.

  5. Analysis and modelling of GaN Schottky-based circuits at millimeter wavelengths

    International Nuclear Information System (INIS)

    Pardo, D; Grajal, J

    2015-01-01

    This work presents an analysis of the capabilities of GaN Schottky diodes for frequency multipliers and mixers at millimeter wavelengths. By using a Monte Carlo (MC) model of the diode coupled to a harmonic balance technique, the electrical and noise performances of these circuits are investigated. Despite the lower electron mobility of GaN compared to GaAs, multipliers based on GaN Schottky diodes can be competitive in the first stages of multiplier chains, due to the excellent power handling capabilities of this material. The performance of these circuits can be improved by taking advantage of the lateral Schottky diode structures based on AlGaN/GaN HEMT technology. (paper)

  6. Optimization of top coupling grating for very long wavelength QWIP based on surface plasmon

    Science.gov (United States)

    Wang, Guodong; Shen, Junling; Liu, Xiaolian; Ni, Lu; Wang, Saili

    2017-09-01

    The relative coupling efficiency of two-dimensional (2D) grating based on surface plasmon for very long wavelength quantum well infrared detector is analyzed by using the three-dimensional finite-difference time domain (3D-FDTD) method algorithm. The relative coupling efficiency with respect to the grating parameters, such as grating pitch, duty ratio, and grating thickness, is analyzed. The calculated results show that the relative coupling efficiency would reach the largest value for the 14.5 μm incident infrared light when taking the grating pitch as 4.4 μm, the duty ratio as 0.325, and the grating thickness as 0.07 μm, respectively.

  7. Noctilucent cloud particle size determination based on multi-wavelength all-sky analysis

    Science.gov (United States)

    Ugolnikov, Oleg S.; Galkin, Alexey A.; Pilgaev, Sergey V.; Roldugin, Alexey V.

    2017-10-01

    The article deals with the analysis of color distribution in noctilucent clouds (NLC) in the sky based on multi-wavelength (RGB) CCD-photometry provided with the all-sky camera in Lovozero in the north of Russia (68.0°N, 35.1°E) during the bright expanded NLC performance in the night of August 12, 2016. Small changes in the NLC color across the sky are interpreted as the atmospheric absorption and extinction effects combined with the difference in the Mie scattering functions of NLC particles for the three color channels of the camera. The method described in this paper is used to find the effective monodisperse radius of particles about 55 nm. The result of these simple and cost-effective measurements is in good agreement with previous estimations of comparable accuracy. Non-spherical particles, Gaussian and lognormal distribution of the particle size are also considered.

  8. Distributed MIMO chaotic radar based on wavelength-division multiplexing technology.

    Science.gov (United States)

    Yao, Tingfeng; Zhu, Dan; Ben, De; Pan, Shilong

    2015-04-15

    A distributed multiple-input multiple-output chaotic radar based on wavelength-division multiplexing technology (WDM) is proposed and demonstrated. The wideband quasi-orthogonal chaotic signals generated by different optoelectronic oscillators (OEOs) are emitted by separated antennas to gain spatial diversity against the fluctuation of a target's radar cross section and enhance the detection capability. The received signals collected by the receive antennas and the reference signals from the OEOs are delivered to the central station for joint processing by exploiting WDM technology. The centralized signal processing avoids precise time synchronization of the distributed system and greatly simplifies the remote units, which improves the localization accuracy of the entire system. A proof-of-concept experiment for two-dimensional localization of a metal target is demonstrated. The maximum position error is less than 6.5 cm.

  9. A Tunable Eight-Wavelength Terahertz Modulator Based on Photonic Crystals

    Science.gov (United States)

    Ji, K.; Chen, H.; Zhou, W.; Zhuang, Y.; Wang, J.

    2017-11-01

    We propose a tunable eight-wavelength terahertz modulator based on a structure of triple triangular lattice photonic crystals by using photonic crystals in the terahertz regime. The triple triangular lattice was formed by nesting circular, square, and triangular dielectric cylinders. Three square point defects were introduced into the perfect photonic crystal to produce eight defect modes. GaAs was used as the point defects to realize tunability. We used a structure with a reflecting barrier to achieve modulation at high transmission rate. The insertion loss and extinction ratio were 0.122 and 38.54 dB, respectively. The modulation rate was 0.788 dB. The performance of the eightwavelength terahertz modulator showed great potential for use in future terahertz communication systems.

  10. Wavelengths and energy levels of Xe V and Xe VI obtained by collision-based spectroscopy

    International Nuclear Information System (INIS)

    Larsson, M.O.; Gonzalez, A.M.; Hallin, R.; Heijkenskjoeld, F.; Nystroem, B.; O'Sullivan, G.; Weber, C.; Waennstroem, A.

    1996-01-01

    We have utilized collision-based spectroscopy to investigate the spectra of Xe V and Xe VI. The radiation emitted following electron capture by 50 keV Xe 5+ and 60 keV Xe 6+ ions impinging on a He (Ar) gas target has been recorded in the 350-6000 (1200-2500) A wavelength region. A number of new energy levels of Xe V and Xe VI have been established from lines identified by us. In particular, we have observed and identified transitions from the 5s 2 5p4f (5s 2 4f) configuration of Xe V (Xe VI). The analysis was supported by Hartree-Fock calculations. (orig.)

  11. AlGaN-based laser diodes for the short-wavelength ultraviolet region

    International Nuclear Information System (INIS)

    Yoshida, Harumasa; Kuwabara, Masakazu; Yamashita, Yoji; Takagi, Yasufumi; Uchiyama, Kazuya; Kan, Hirofumi

    2009-01-01

    We have demonstrated the room-temperature operation of GaN/AlGaN and indium-free AlGaN multiple-quantum-well (MQW) laser diodes under the pulsed-current mode. We have successfully grown low-dislocation-density AlGaN films with AlN mole fractions of 20 and 30% on sapphire substrates using the hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method. GaN/AlGaN and AlGaN MQW laser diodes have been fabricated on the low-dislocation-density Al 0.2 Ga 0.8 N and Al 0.3 Ga 0.7 N films, respectively. The GaN/AlGaN MQW laser diodes lased at a peak wavelength ranging between 359.6 and 354.4 nm. A threshold current density of 8 kA cm -2 , an output power as high as 80 mW and a differential external quantum efficiency (DEQE) of 17.4% have been achieved. The AlGaN MQW laser diodes lased at a peak wavelength down to 336.0 nm far beyond the GaN band gap. For the GaN/AlGaN MQW laser diodes, the modal gain coefficient and the optical internal loss are estimated to be 4.7±0.6 cm kA -1 and 10.6±2.7 cm -1 , respectively. We have observed that the characteristic temperature T 0 ranges from 132 to 89 K and DEQE shows an almost stable tendency with increase of temperature. A temperature coefficient of 0.049 nm K -1 is also found for the GaN/AlGaN MQW laser diode. The results for the AlGaN-based laser diodes grown on high-quality AlGaN films presented here will be essential for the future development of laser diodes emitting much shorter wavelengths.

  12. Fabrication of two-dimensional visible wavelength nanoscale plasmonic structures using hydrogen silsesquioxane based resist

    Science.gov (United States)

    Smith, Kyle Z.; Gadde, Akshitha; Kadiyala, Anand; Dawson, Jeremy M.

    2016-03-01

    In recent years, the global market for biosensors has continued to increase in combination with their expanding use in areas such as biodefense/detection, home diagnostics, biometric identification, etc. A constant necessity for inexpensive, portable bio-sensing methods, while still remaining simple to understand and operate, is the motivation behind novel concepts and designs. Labeled visible spectrum bio-sensing systems provide instant feedback that is both simple and easy to work with, but are limited by the light intensity thresholds required by the imaging systems. In comparison, label-free bio-sensing systems and other detection modalities like electrochemical, frequency resonance, thermal change, etc., can require additional technical processing steps to convey the final result, increasing the system's complexity and possibly the time required for analysis. Further decrease in the detection limit can be achieved through the addition of plasmonic structures into labeled bio-sensing systems. Nano-structures that operate in the visible spectrum have feature sizes typically in the order of the operating wavelength, calling for high aspect ratio nanoscale fabrication capabilities. In order to achieve these dimensions, electron beam lithography (EBL) is used due to its accurate feature production. Hydrogen silsesquioxane (HSQ) based electron beam resist is chosen for one of its benefits, which is after exposure to oxygen plasma, the patterned resist cures into silicon dioxide (SiO2). These cured features in conjunction with nanoscale gold particles help in producing a high electric field through dipole generation. In this work, a detailed process flow of the fabrication of square lattice of plasmonic structures comprising of gold coated silicon dioxide pillars designed to operate at 560 nm wavelength and produce an intensity increase of roughly 100 percent will be presented.

  13. Phased-array-based photonic integrated circuits for wavelength division multiplexing applications

    NARCIS (Netherlands)

    Staring, A.A.M.; Smit, M.K.

    1997-01-01

    Wavelength division multiplexing (WDM) technology provides many options to the design of flexible all-optical networks. In order to exploit these options to their full potential, photonic integrated circuits (PICs) for wavelength routing and switching will be indispensable. One of the basic building

  14. Design of multi-wavelength tunable filter based on Lithium Niobate

    Science.gov (United States)

    Zhang, Ailing; Yao, Yuan; Zhang, Yue; Song, Hongyun

    2018-05-01

    A multi-wavelength tunable filter is designed. It consists of multiple waveguides among multiple waveguide gratings. A pair of electrodes were placed on both sides of each waveguide. The tunable filter uses the electro-optic effect of Lithium Niobate to tune the phase caused by each waveguide. Consequently, the wavelength and wavelength spacing of the filter are tuned by changing external voltages added on the electrode pairs. The tunable property of the filter is analyzed by phase matching condition and transfer-matrix method. Numerical results show that not only multiple wavelengths with narrow bandwidth are tuned with nearly equal spacing by synchronously changing the voltages added on all electrode pairs, but also the number of wavelengths is determined by the number of phase shifts caused by electrode pairs. Furthermore, due to the electro-optic effect of Lithium Niobate, the tuning speed of the filter can reach the order of ns.

  15. Topography of InP surface bombarded by O2+ ion beam

    International Nuclear Information System (INIS)

    Sun Zhaoqi

    1997-01-01

    The topography of InP surface bombarded by O 2 + ion beam was investigated. Rippled topographies were observed for bombarded samples, and the data show that the ripple formation starts from a sputtering depth of about 0.4 μm. The wavelength and the disorder of the ripples both increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion-beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment

  16. Visible wavelength surface-enhanced Raman spectroscopy from In-InP nanopillars for biomolecule detection

    Science.gov (United States)

    Murdoch, B. J.; Portoles, J. F.; Tardio, S.; Barlow, A. J.; Fletcher, I. W.; Cumpson, P. J.

    2016-12-01

    Visible wavelength surface-enhanced Raman spectroscopy (SERS) has been observed from bovine serum albumin (BSA) using In-InP nanopillars synthesised by Ar gas cluster ion beam sputtering of InP wafers. InP provides a high local refractive index for plasmonic In structures, which increases the wavelength of the In surface plasmon resonance. The Raman scattering signal was determined to be up to 285 times higher for BSA deposited onto In-InP nanopillars when compared with Si wafer substrates. These substrates demonstrate the label-free detection of biomolecules by visible wavelength SERS, without the use of noble metal particles.

  17. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

    Science.gov (United States)

    Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

    2014-12-17

    We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

  18. Dual-wavelength high-power diode laser system based on an external-cavity tapered amplifier with tunable frequency difference

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2012-01-01

    knowledge, this is the broadest tuning range of the frequency difference from a dual-wavelength diode laser system. The spectrum, output power, and beam quality of the diode laser system are characterized. The power stability of each wavelength is measured, and the power fluctuations of the two wavelengths......A dual-wavelength high-power semiconductor laser system based on a tapered amplifier with double-Littrow external cavity is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 10.0 THz. To our...

  19. Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

    Science.gov (United States)

    Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

    2015-01-14

    Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

  20. S – C – L triple wavelength superluminescent source based on an ultra-wideband SOA and FBGs

    International Nuclear Information System (INIS)

    Ahmad, H; Zulkifli, M Z; Hassan, N A; Muhammad, F D; Harun, S W

    2013-01-01

    We propose and demonstrate a wide-band semiconductor optical amplifier (SOA) based triple-wavelength superluminescent source with the output in the S-, C- and L-band regions. The proposed systems uses an ultra-wideband SOA with an amplification range from 1440 to 1620 nm as the linear gain medium. Three fibre Bragg gratings (FBGs) with centre wavelengths of 1500, 1540 and 1580 nm are used to generate the lasing wavelengths in the S-, Cand L-bands respectively, while a variable optical attenuator is used to finely balance the optical powers of the lasing wavelengths. The ultra-wideband SOA generates an amplified spontaneous emission (ASE) spectrum with a peak power of -33 dBm at the highest SOA drive current, and also demonstrates a down-shift in the centre wavelength of the generated spectrum due to the spatial distribution of the carrier densities. The S-band wavelength is the dominant wavelength at high drive currents, with an output power of -6 dBm as compared to the C- and L-bands, which only have powers of -11 and -10 dBm, respectively. All wavelengths have a high average signal-to-noise ratio more than 60 dB at the highest drive current of 390 mA, and the system also shows a high degree of stability, with power fluctuations of less than 3 dB within 70 min. The proposed system can find many applications where a wide-band and stable laser source is crucial, such as in communications and sensing. (control of laser radiation parameters)

  1. S – C – L triple wavelength superluminescent source based on an ultra-wideband SOA and FBGs

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, H; Zulkifli, M Z; Hassan, N A; Muhammad, F D; Harun, S W [Photonics Research Center (Department of Physics), University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2013-10-31

    We propose and demonstrate a wide-band semiconductor optical amplifier (SOA) based triple-wavelength superluminescent source with the output in the S-, C- and L-band regions. The proposed systems uses an ultra-wideband SOA with an amplification range from 1440 to 1620 nm as the linear gain medium. Three fibre Bragg gratings (FBGs) with centre wavelengths of 1500, 1540 and 1580 nm are used to generate the lasing wavelengths in the S-, Cand L-bands respectively, while a variable optical attenuator is used to finely balance the optical powers of the lasing wavelengths. The ultra-wideband SOA generates an amplified spontaneous emission (ASE) spectrum with a peak power of -33 dBm at the highest SOA drive current, and also demonstrates a down-shift in the centre wavelength of the generated spectrum due to the spatial distribution of the carrier densities. The S-band wavelength is the dominant wavelength at high drive currents, with an output power of -6 dBm as compared to the C- and L-bands, which only have powers of -11 and -10 dBm, respectively. All wavelengths have a high average signal-to-noise ratio more than 60 dB at the highest drive current of 390 mA, and the system also shows a high degree of stability, with power fluctuations of less than 3 dB within 70 min. The proposed system can find many applications where a wide-band and stable laser source is crucial, such as in communications and sensing. (control of laser radiation parameters)

  2. Wavelength tunable CW red laser generated based on an intracavity-SFG composite cavity

    Science.gov (United States)

    Zhang, Z. N.; Bai, Y.; Lei, G. Z.; Bai, B.; Sun, Y. X.; Hu, M. X.; Wang, C.; Bai, J. T.

    2016-12-01

    We report a wavelength-tunable watt-level continuous wave (CW) red laser that uses a composite cavity based on an intracavity sum-frequency generation (SFG). The composite cavity is composed of a LD side-pumped Nd: GdVO4 p-polarized 1062.9 nm resonant cavity and a resonant optical parametric oscillator (SRO) of s-polarized signal light using a periodically poled crystal MgO: PPLN. Based on the temperature tuning from 30 °C to 200 °C, the CW red laser beams are obtained in a tunable waveband from 634.4 nm to 649.1 nm, corresponding to a tunable output waveband from 3278.0 nm to 2940.2 nm of the mid-infrared idler lights. The maximum CW output power of the red laser at 634.4 nm and the idler light at 3278.0 nm reach 3.03 W and 4.13 W under 30 °C, respectively.

  3. Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation

    Science.gov (United States)

    Asif, Muhammad; Chen, Chen; Peng, Ding; Xi, Wang; Zhi, Jin

    2018-04-01

    Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.

  4. Process-Based Cost Modeling of Photonics Manufacture: The Cost Competitiveness of Monolithic Integration of a 1550-nm DFB Laser and an Electroabsorptive Modulator on an InP Platform

    Science.gov (United States)

    Fuchs, Erica R. H.; Bruce, E. J.; Ram, R. J.; Kirchain, Randolph E.

    2006-08-01

    The monolithic integration of components holds promise to increase network functionality and reduce packaging expense. Integration also drives down yield due to manufacturing complexity and the compounding of failures across devices. Consensus is lacking on the economically preferred extent of integration. Previous studies on the cost feasibility of integration have used high-level estimation methods. This study instead focuses on accurate-to-industry detail, basing a process-based cost model of device manufacture on data collected from 20 firms across the optoelectronics supply chain. The model presented allows for the definition of process organization, including testing, as well as processing conditions, operational characteristics, and level of automation at each step. This study focuses on the cost implications of integration of a 1550-nm DFB laser with an electroabsorptive modulator on an InP platform. Results show the monolithically integrated design to be more cost competitive over discrete component options regardless of production scale. Dominant cost drivers are packaging, testing, and assembly. Leveraging the technical detail underlying model projections, component alignment, bonding, and metal-organic chemical vapor deposition (MOCVD) are identified as processes where technical improvements are most critical to lowering costs. Such results should encourage exploration of the cost advantages of further integration and focus cost-driven technology development.

  5. Carrier thermalization dynamics in single zincblende and wurtzite InP Nanowires.

    Science.gov (United States)

    Wang, Yuda; Jackson, Howard E; Smith, Leigh M; Burgess, Tim; Paiman, Suriati; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati

    2014-12-10

    Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurements of single nanowires, which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs InP NW) and less strongly on crystal structure (ZB vs WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NWs reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures that lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices.

  6. Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices

    International Nuclear Information System (INIS)

    Sanatinia, Reza; Berrier, Audrey; Anand, Srinivasan; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri

    2015-01-01

    A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, ‘black InP,’ a property useful for solar cells. The realization of a conformal p–n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved. (paper)

  7. Optical reflectance studies of highly specular anisotropic nanoporous (111) InP membrane

    International Nuclear Information System (INIS)

    Steele, J A; Lewis, R A; Sirbu, L; Enachi, M; Tiginyanu, I M; Skuratov, V A

    2015-01-01

    High-precision optical angular reflectance measurements are reported for a specular anisotropic nanoporous (111) InP membrane prepared by doping-assisted wet-electrochemical etching. The membrane surface morphology was investigated using scanning electron microscope imaging and revealed a quasi-uniform and self-organized nanoporous network consisting of semiconductor ‘islands’ in the sub-wavelength regime. The optical response of the nanoporous InP surface was studied at 405 nm (740 THz; UV), 633 nm (474 THz; VIS) and 1064 nm (282 THz; NIR), and exhibited a retention of basic macro-dielectric properties. Refractive index determinations demonstrate an optical anisotropy for the membrane which is strongly dependent on the wavelength of incident light, and exhibits an interesting inversion (positive anisotropy to negative) between 405 and 633 nm. The inversion of optical anisotropy is attributed to a strongly reduced ‘metallic’ behaviour in the membrane when subject to above-bandgap illumination. For the simplest case of sub-bandgap incident irradiation, the optical properties of the nanoporous InP sample are analysed in terms of an effective refractive index n eff and compared to effective media approximations. (invited article)

  8. Hydrogenation of Very Long Wavelength Infrared Focal Plane Arrays Based on Type II Superlattices, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to advance the Ga-free InAs/InAsSb type II superlattice (T2SL) materials technology for very long wavelength infrared (VLWIR) focal plane arrays (FPAs) by...

  9. Development and operation of a high-throughput accurate-wavelength lens-based spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Bell, Ronald E., E-mail: rbell@pppl.gov [Princeton Plasma Physics Laboratory, Princeton, New Jersey 08543 (United States)

    2014-11-15

    A high-throughput spectrometer for the 400–820 nm wavelength range has been developed for charge exchange recombination spectroscopy or general spectroscopy. A large 2160 mm{sup −1} grating is matched with fast f/1.8 200 mm lenses, which provide stigmatic imaging. A precision optical encoder measures the grating angle with an accuracy ≤0.075 arc sec. A high quantum efficiency low-etaloning CCD detector allows operation at longer wavelengths. A patch panel allows input fibers to interface with interchangeable fiber holders that attach to a kinematic mount at the entrance slit. Computer-controlled hardware allows automated control of wavelength, timing, f-number, automated data collection, and wavelength calibration.

  10. All-Si photodetector for telecommunication wavelength based on subwavelength grating structure and critical coupling

    DEFF Research Database (Denmark)

    Taghizadeh, Alireza; Rasoulzadeh Zali, Aref; Chung, Il-Sug

    2017-01-01

    We propose an efficient planar all-Si internal photoemission photodetector operating at the telecommunication wavelength of 1550 nm and numerically investigate its optical and electrical properties. The proposed polarization-sensitive detector is composed of an appropriately engineered subwavelen......We propose an efficient planar all-Si internal photoemission photodetector operating at the telecommunication wavelength of 1550 nm and numerically investigate its optical and electrical properties. The proposed polarization-sensitive detector is composed of an appropriately engineered...

  11. Wavelength Selection Method Based on Differential Evolution for Precise Quantitative Analysis Using Terahertz Time-Domain Spectroscopy.

    Science.gov (United States)

    Li, Zhi; Chen, Weidong; Lian, Feiyu; Ge, Hongyi; Guan, Aihong

    2017-12-01

    Quantitative analysis of component mixtures is an important application of terahertz time-domain spectroscopy (THz-TDS) and has attracted broad interest in recent research. Although the accuracy of quantitative analysis using THz-TDS is affected by a host of factors, wavelength selection from the sample's THz absorption spectrum is the most crucial component. The raw spectrum consists of signals from the sample and scattering and other random disturbances that can critically influence the quantitative accuracy. For precise quantitative analysis using THz-TDS, the signal from the sample needs to be retained while the scattering and other noise sources are eliminated. In this paper, a novel wavelength selection method based on differential evolution (DE) is investigated. By performing quantitative experiments on a series of binary amino acid mixtures using THz-TDS, we demonstrate the efficacy of the DE-based wavelength selection method, which yields an error rate below 5%.

  12. Sensitive Wavelengths Selection in Identification of Ophiopogon japonicus Based on Near-Infrared Hyperspectral Imaging Technology

    Directory of Open Access Journals (Sweden)

    Zhengyan Xia

    2017-01-01

    Full Text Available Hyperspectral imaging (HSI technology has increasingly been applied as an analytical tool in fields of agricultural, food, and Traditional Chinese Medicine over the past few years. The HSI spectrum of a sample is typically achieved by a spectroradiometer at hundreds of wavelengths. In recent years, considerable effort has been made towards identifying wavelengths (variables that contribute useful information. Wavelengths selection is a critical step in data analysis for Raman, NIRS, or HSI spectroscopy. In this study, the performances of 10 different wavelength selection methods for the discrimination of Ophiopogon japonicus of different origin were compared. The wavelength selection algorithms tested include successive projections algorithm (SPA, loading weights (LW, regression coefficients (RC, uninformative variable elimination (UVE, UVE-SPA, competitive adaptive reweighted sampling (CARS, interval partial least squares regression (iPLS, backward iPLS (BiPLS, forward iPLS (FiPLS, and genetic algorithms (GA-PLS. One linear technique (partial least squares-discriminant analysis was established for the evaluation of identification. And a nonlinear calibration model, support vector machine (SVM, was also provided for comparison. The results indicate that wavelengths selection methods are tools to identify more concise and effective spectral data and play important roles in the multivariate analysis, which can be used for subsequent modeling analysis.

  13. Wavelength selection for portable noninvasive blood component measurement system based on spectral difference coefficient and dynamic spectrum

    Science.gov (United States)

    Feng, Ximeng; Li, Gang; Yu, Haixia; Wang, Shaohui; Yi, Xiaoqing; Lin, Ling

    2018-03-01

    Noninvasive blood component analysis by spectroscopy has been a hotspot in biomedical engineering in recent years. Dynamic spectrum provides an excellent idea for noninvasive blood component measurement, but studies have been limited to the application of broadband light sources and high-resolution spectroscopy instruments. In order to remove redundant information, a more effective wavelength selection method has been presented in this paper. In contrast to many common wavelength selection methods, this method is based on sensing mechanism which has a clear mechanism and can effectively avoid the noise from acquisition system. The spectral difference coefficient was theoretically proved to have a guiding significance for wavelength selection. After theoretical analysis, the multi-band spectral difference coefficient-wavelength selection method combining with the dynamic spectrum was proposed. An experimental analysis based on clinical trial data from 200 volunteers has been conducted to illustrate the effectiveness of this method. The extreme learning machine was used to develop the calibration models between the dynamic spectrum data and hemoglobin concentration. The experiment result shows that the prediction precision of hemoglobin concentration using multi-band spectral difference coefficient-wavelength selection method is higher compared with other methods.

  14. Fluorescence suppression using wavelength modulated Raman spectroscopy in fiber-probe-based tissue analysis.

    Science.gov (United States)

    Praveen, Bavishna B; Ashok, Praveen C; Mazilu, Michael; Riches, Andrew; Herrington, Simon; Dholakia, Kishan

    2012-07-01

    In the field of biomedical optics, Raman spectroscopy is a powerful tool for probing the chemical composition of biological samples. In particular, fiber Raman probes play a crucial role for in vivo and ex vivo tissue analysis. However, the high-fluorescence background typically contributed by the auto fluorescence from both a tissue sample and the fiber-probe interferes strongly with the relatively weak Raman signal. Here we demonstrate the implementation of wavelength-modulated Raman spectroscopy (WMRS) to suppress the fluorescence background while analyzing tissues using fiber Raman probes. We have observed a significant signal-to-noise ratio enhancement in the Raman bands of bone tissue, which have a relatively high fluorescence background. Implementation of WMRS in fiber-probe-based bone tissue study yielded usable Raman spectra in a relatively short acquisition time (∼30  s), notably without any special sample preparation stage. Finally, we have validated its capability to suppress fluorescence on other tissue samples such as adipose tissue derived from four different species.

  15. Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

    Science.gov (United States)

    Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

    2016-04-01

    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

  16. High microwave performance ion-implanted GaAs MESFETs on InP substrates

    International Nuclear Information System (INIS)

    Wada, M.; Kato, K.

    1990-01-01

    Ion implantation was employed, for the first time, in fabricating GaAs MESFETs in undoped 2 μm thick GaAs epitaxial layers directly grown on InP substrates by low-pressure MOVPE. The Si-ion-implanted GaAs layer on InP substrates showed excellent electrical characteristics: a mobility of 4300 cm 2 /Vs with a carrier density of 2 x 10 17 cm -3 at room temperature. The MESFET (0.8 μm gate length) exhibited a current-gain cutoff frequency of 25 GHz and a maximum frequency of oscillation of 53 GHz, the highest values yet reported to GaAs MESFETs on InP substrates. These results demonstrate the high potential of ion-implanted MESFETs as electronic devices for high-speed InP-based OEICs. (author)

  17. Post deposition annealing effect on the properties of Al2O3/InP interface

    Science.gov (United States)

    Kim, Hogyoung; Kim, Dong Ha; Choi, Byung Joon

    2018-02-01

    Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al2O3 decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al2O3/InP interface (into Al2O3 layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al2O3 during the annealing process should be controlled carefully to optimize the Al2O3/InP based devices.

  18. Soliton-based ultrafast multi-wavelength nonlinear switching in dual-core photonic crystal fibre

    International Nuclear Information System (INIS)

    Stajanca, P; Pysz, D; Michalka, M; Bugar, I; Andriukaitis, G; Balciunas, T; Fan, G; Baltuska, A

    2014-01-01

    Systematic experimental study of ultrafast multi-wavelength all-optical switching performance in a dual-core photonic crystal fibre is presented. The focus is on nonlinearly induced switching between the two output ports at non-excitation wavelengths, which are generated during nonlinear propagation of femtosecond pulses in the anomalous dispersion region of a dual-core photonic crystal fibre made of multicomponent glass. Spatial and spectral characteristics of the fibre output radiation were measured separately for both fibre cores under various polarization and intensity conditions upon selective, individual excitation of each fibre core. Polarization-controlled nonlinear switching performance at multiple non-excitation wavelengths was demonstrated in the long-wavelength optical communication bands and beyond. Depending on the input pulse polarization, narrowband switching operation at 1560 nm and 1730 nm takes place with double core extinction ratio contrasts of 9 dB and 14.5 dB, respectively. Moreover, our approach allows switching with simultaneous wavelength shift from 1650 to 1775 nm with extinction ratio contrast larger than 18 dB. In addition, non-reciprocal behaviour of the soliton fission process under different fibre core excitations was observed and its effect on the multi-wavelength nonlinear switching performance was explained, taking into account the slight dual-core structure asymmetry. The obtained results represent ultrafast all-optical switching with an extended dimension of wavelength shift, controllable with both the input radiation intensity and the polarization by simple propagation along a 14 mm long fibre. (paper)

  19. Routing and wavelength assignment based on normalized resource and constraints for all-optical network

    Science.gov (United States)

    Joo, Seong-Soon; Nam, Hyun-Soon; Lim, Chang-Kyu

    2003-08-01

    With the rapid growth of the Optical Internet, high capacity pipes is finally destined to support end-to-end IP on the WDM optical network. Newly launched 2D MEMS optical switching module in the market supports that expectations of upcoming a transparent optical cross-connect in the network have encouraged the field applicable research on establishing real all-optical transparent network. To open up a customer-driven bandwidth services, design of the optical transport network becomes more challenging task in terms of optimal network resource usage. This paper presents a practical approach to finding a route and wavelength assignment for wavelength routed all-optical network, which has λ-plane OXC switches and wavelength converters, and supports that optical paths are randomly set up and released by dynamic wavelength provisioning to create bandwidth between end users with timescales on the order of seconds or milliseconds. We suggest three constraints to make the RWA problem become more practical one on deployment for wavelength routed all-optical network in network view: limitation on maximum hop of a route within bearable optical network impairments, limitation on minimum hops to travel before converting a wavelength, and limitation on calculation time to find all routes for connections requested at once. We design the NRCD (Normalized Resource and Constraints for All-Optical Network RWA Design) algorithm for the Tera OXC: network resource for a route is calculated by the number of internal switching paths established in each OXC nodes on the route, and is normalized by ratio of number of paths established and number of paths equipped in a node. We show that it fits for the RWA algorithm of the wavelength routed all-optical network through real experiments on the distributed objects platform.

  20. An Optical Biosensing Strategy Based on Selective Light Absorption and Wavelength Filtering from Chromogenic Reaction

    Directory of Open Access Journals (Sweden)

    Hyeong Jin Chun

    2018-03-01

    Full Text Available To overcome the time and space constraints in disease diagnosis via the biosensing approach, we developed a new signal-transducing strategy that can be applied to colorimetric optical biosensors. Our study is focused on implementation of a signal transduction technology that can directly translate the color intensity signals—that require complicated optical equipment for the analysis—into signals that can be easily counted with the naked eye. Based on the selective light absorption and wavelength-filtering principles, our new optical signaling transducer was built from a common computer monitor and a smartphone. In this signal transducer, the liquid crystal display (LCD panel of the computer monitor served as a light source and a signal guide generator. In addition, the smartphone was used as an optical receiver and signal display. As a biorecognition layer, a transparent and soft material-based biosensing channel was employed generating blue output via a target-specific bienzymatic chromogenic reaction. Using graphics editor software, we displayed the optical signal guide patterns containing multiple polygons (a triangle, circle, pentagon, heptagon, and 3/4 circle, each associated with a specified color ratio on the LCD monitor panel. During observation of signal guide patterns displayed on the LCD monitor panel using a smartphone camera via the target analyte-loaded biosensing channel as a color-filtering layer, the number of observed polygons changed according to the concentration of the target analyte via the spectral correlation between absorbance changes in a solution of the biosensing channel and color emission properties of each type of polygon. By simple counting of the changes in the number of polygons registered by the smartphone camera, we could efficiently measure the concentration of a target analyte in a sample without complicated and expensive optical instruments. In a demonstration test on glucose as a model analyte, we

  1. An Optical Biosensing Strategy Based on Selective Light Absorption and Wavelength Filtering from Chromogenic Reaction.

    Science.gov (United States)

    Chun, Hyeong Jin; Han, Yong Duk; Park, Yoo Min; Kim, Ka Ram; Lee, Seok Jae; Yoon, Hyun C

    2018-03-06

    To overcome the time and space constraints in disease diagnosis via the biosensing approach, we developed a new signal-transducing strategy that can be applied to colorimetric optical biosensors. Our study is focused on implementation of a signal transduction technology that can directly translate the color intensity signals-that require complicated optical equipment for the analysis-into signals that can be easily counted with the naked eye. Based on the selective light absorption and wavelength-filtering principles, our new optical signaling transducer was built from a common computer monitor and a smartphone. In this signal transducer, the liquid crystal display (LCD) panel of the computer monitor served as a light source and a signal guide generator. In addition, the smartphone was used as an optical receiver and signal display. As a biorecognition layer, a transparent and soft material-based biosensing channel was employed generating blue output via a target-specific bienzymatic chromogenic reaction. Using graphics editor software, we displayed the optical signal guide patterns containing multiple polygons (a triangle, circle, pentagon, heptagon, and 3/4 circle, each associated with a specified color ratio) on the LCD monitor panel. During observation of signal guide patterns displayed on the LCD monitor panel using a smartphone camera via the target analyte-loaded biosensing channel as a color-filtering layer, the number of observed polygons changed according to the concentration of the target analyte via the spectral correlation between absorbance changes in a solution of the biosensing channel and color emission properties of each type of polygon. By simple counting of the changes in the number of polygons registered by the smartphone camera, we could efficiently measure the concentration of a target analyte in a sample without complicated and expensive optical instruments. In a demonstration test on glucose as a model analyte, we could easily measure the

  2. Wide wavelength range tunable one-dimensional silicon nitride nano-grating guided mode resonance filter based on azimuthal rotation

    Directory of Open Access Journals (Sweden)

    Ryoji Yukino

    2017-01-01

    Full Text Available We describe wavelength tuning in a one dimensional (1D silicon nitride nano-grating guided mode resonance (GMR structure under conical mounting configuration of the device. When the GMR structure is rotated about the axis perpendicular to the surface of the device (azimuthal rotation for light incident at oblique angles, the conditions for resonance are different than for conventional GMR structures under classical mounting. These resonance conditions enable tuning of the GMR peak position over a wide range of wavelengths. We experimental demonstrate tuning over a range of 375 nm between 500 nm˜875 nm. We present a theoretical model to explain the resonance conditions observed in our experiments and predict the peak positions with show excellent agreement with experiments. Our method for tuning wavelengths is simpler and more efficient than conventional procedures that employ variations in the design parameters of structures or conical mounting of two-dimensional (2D GMR structures and enables a single 1D GMR device to function as a high efficiency wavelength filter over a wide range of wavelengths. We expect tunable filters based on this technique to be applicable in a wide range of fields including astronomy and biomedical imaging.

  3. Budker INP in the LHC Machine (2)

    CERN Multimedia

    2001-01-01

    The main BINP contributions to the LHC machine are magnets for transfer lines (26 MCHF) and bus- bar sets (23 MCHF). Budker INP is also responsible for construction of some other LHC magnets and vacuum parts. In total, the contribution to the LHC machine will reach about 90 MCHF.

  4. WAVELENGTH SELECTION OF HYPERSPECTRAL LIDAR BASED ON FEATURE WEIGHTING FOR ESTIMATION OF LEAF NITROGEN CONTENT IN RICE

    Directory of Open Access Journals (Sweden)

    L. Du

    2016-06-01

    Full Text Available Hyperspectral LiDAR (HSL is a novel tool in the field of active remote sensing, which has been widely used in many domains because of its advantageous ability of spectrum-gained. Especially in the precise monitoring of nitrogen in green plants, the HSL plays a dispensable role. The exiting HSL system used for nitrogen status monitoring has a multi-channel detector, which can improve the spectral resolution and receiving range, but maybe result in data redundancy, difficulty in system integration and high cost as well. Thus, it is necessary and urgent to pick out the nitrogen-sensitive feature wavelengths among the spectral range. The present study, aiming at solving this problem, assigns a feature weighting to each centre wavelength of HSL system by using matrix coefficient analysis and divergence threshold. The feature weighting is a criterion to amend the centre wavelength of the detector to accommodate different purpose, especially the estimation of leaf nitrogen content (LNC in rice. By this way, the wavelengths high-correlated to the LNC can be ranked in a descending order, which are used to estimate rice LNC sequentially. In this paper, a HSL system which works based on a wide spectrum emission and a 32-channel detector is conducted to collect the reflectance spectra of rice leaf. These spectra collected by HSL cover a range of 538 nm – 910 nm with a resolution of 12 nm. These 32 wavelengths are strong absorbed by chlorophyll in green plant among this range. The relationship between the rice LNC and reflectance-based spectra is modeled using partial least squares (PLS and support vector machines (SVMs based on calibration and validation datasets respectively. The results indicate that I wavelength selection method of HSL based on feature weighting is effective to choose the nitrogen-sensitive wavelengths, which can also be co-adapted with the hardware of HSL system friendly. II The chosen wavelength has a high correlation with rice LNC

  5. Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom K.

    2012-01-01

    In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit...... demonstrates a power gain of 4.5dB with a saturated output power of 14.2dBm at 69.2GHz. © 2012 European Microwave Assoc....

  6. Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

    International Nuclear Information System (INIS)

    Bhimnathwala, H.G.; Tyagi, S.D.; Bothra, S.; Ghandhi, S.K.; Borrego, J.M.

    1990-01-01

    Minority carrier lifetimes in the base of solar cells made in GaAs and InP are measured by open circuit voltage decay method. This paper describes the measurement technique and the conditions under which the minority carrier lifetimes can be measured. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations are measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection

  7. Design optimization and tolerance analysis of a spot-size converter for the taper-assisted vertical integration platform in InP.

    Science.gov (United States)

    Tolstikhin, Valery; Saeidi, Shayan; Dolgaleva, Ksenia

    2018-05-01

    We report on the design optimization and tolerance analysis of a multistep lateral-taper spot-size converter based on indium phosphide (InP), performed using the Monte Carlo method. Being a natural fit to (and a key building block of) the regrowth-free taper-assisted vertical integration platform, such a spot-size converter enables efficient and displacement-tolerant fiber coupling to InP-based photonic integrated circuits at a wavelength of 1.31 μm. An exemplary four-step lateral-taper design featuring 0.35 dB coupling loss at optimal alignment of a standard single-mode fiber; ≥7  μm 1 dB displacement tolerance in any direction in a facet plane; and great stability against manufacturing variances is demonstrated.

  8. Strain induced tunable wavelength filters based on flexible polymer waveguide Bragg reflector.

    Science.gov (United States)

    Kim, Kyung-Jo; Seo, Jun-Kyu; Oh, Min-Cheol

    2008-02-04

    A tunable wavelength filter is demonstrated by imposing a strain on a polymeric Bragg reflection waveguide fabricated on a flexible substrate. The highly elastic property of flexible polymer device enables much wider tuning than the silica fiber. To produce a uniform grating pattern on a flexible plastic substrate, a post lift-off process along with an absorbing layer is incorporated. The flexible Bragg reflector shows narrow bandwidth, which is convincing the uniformity of the grating structure fabricated on plastic film. By stretching the flexible polymer device, the Bragg reflection wavelength is tuned continuously up to 45 nm for the maximum strain of 31,690 muepsilon, which is determined by the elastic expansion limit of waveguide polymer. From the linear wavelength shift proportional to the strain, the photoelastic coefficient of the ZPU polymer is found.

  9. Widely tunable wavelength conversion with extinction ratio enhancement using PCF-based NOLM

    DEFF Research Database (Denmark)

    Kwok, C.H.; Lee, S.H.; Chow, K.K.

    2005-01-01

    A widely tunable wavelength conversion scheme has been demonstrated using a 64-m-long dispersion-flattened high-nonlinearity photonic crystal fiber in a nonlinear optical loop mirror. Wavelength conversion range of over 60 nm with a 10-Gb/s return-to-zero signal was obtained with the output...... extinction ratio (ER) maintained above 13 dB. The proposed scheme can also improve the output ER and remove the bit-error-rate floor if a degraded signal is used....

  10. Building-Integrated Solar Energy Devices based on Wavelength Selective Films

    Science.gov (United States)

    Ulavi, Tejas

    A potentially attractive option for building integrated solar is to employ hybrid solar collectors which serve dual purposes, combining solar thermal technology with either thin film photovoltaics or daylighting. In this study, two hybrid concepts, a hybrid photovoltaic/thermal (PV/T) collector and a hybrid 'solar window', are presented and analyzed to evaluate technical performance. In both concepts, a wavelength selective film is coupled with a compound parabolic concentrator (CPC) to reflect and concentrate the infrared portion of the solar spectrum onto a tubular absorber. The visible portion of the spectrum is transmitted through the concentrator to either a thin film Cadmium Telluride (CdTe) solar panel for electricity generation or into the interior space for daylighting. Special attention is given to the design of the hybrid devices for aesthetic building integration. An adaptive concentrator design based on asymmetrical truncation of CPCs is presented for the hybrid solar window concept. The energetic and spectral split between the solar thermal module and the PV or daylighting module are functions of the optical properties of the wavelength selective film and the concentrator geometry, and are determined using a Monte Carlo Ray-Tracing (MCRT) model. Results obtained from the MCRT can be used in conjugation with meteorological data for specific applications to study the impact of CPC design parameters including the half-acceptance angle thetac, absorber diameter D and truncation on the annual thermal and PV/daylighting efficiencies. The hybrid PV/T system is analyzed for a rooftop application in Phoenix, AZ. Compared to a system of the same area with independent solar thermal and PV modules, the hybrid PV/T provides 20% more energy, annually. However, the increase in total delivered energy is due solely to the addition of the thermal module and is achieved at an expense of a decrease in the annual electrical efficiency from 8.8% to 5.8% due to shading by

  11. Fluorescence-based calculus detection using a 405-nm excitation wavelength

    Science.gov (United States)

    Brede, O.; Schelle, F.; Krueger, S.; Oehme, B.; Dehn, C.; Frentzen, M.; Braun, A.

    2011-03-01

    The aim of this study was to assess the difference of fluorescence signals of cement and calculus using a 405 nm excitation wavelength. A total number of 20 freshly extracted teeth was used. The light source used for this study was a blue LED with a wavelength of 405nm. For each tooth the spectra of calculus and cementum were measured separately. Fluorescence light was collimated into an optical fibre and spectrally analyzed using an echelle spectrometer (aryelle 200, Lasertechnik Berlin, Germany) with an additionally bandpass (fgb 67, Edmund Industrial Optics, Karlsruhe, Germany). From these 40 measurements the median values were calculated over the whole spectrum, leading to two different median spectra, one for calculus and one for cementum. For further statistical analysis we defined 8 areas of interest (AOI) in wavelength regions, showing remarkable differences in signal strength. In 7 AOIs the intensity of the calculus spectrum differed statistically significant from the intensity of the cementum spectrum (p calculus and cement between 600nm and 700nm. Thus, we can conclude that fluorescence of calculus shows a significant difference to the fluorescence of cement. A differentiation over the intensity is possible as well as over the spectrum. Using a wavelength of 405nm, it is possible to distinguish between calculus and cement. These results could be used for further devices to develop a method for feedback controlled calculus removal.

  12. All-optical wavelength converter based on fiber cross-phase modulation and fiber Bragg grating

    Czech Academy of Sciences Publication Activity Database

    Honzátko, Pavel

    2010-01-01

    Roč. 283, č. 9 (2010), s. 1744-1749 ISSN 0030-4018 R&D Projects: GA AV ČR 1ET300670502 Institutional research plan: CEZ:AV0Z20670512 Keywords : Wavelength conversion * Fiber cross phase modulation * Fiber Bragg grating Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.517, year: 2010

  13. 1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control

    Science.gov (United States)

    Okuno, Yae L.; Geske, Jon; Gan, Kian-Giap; Chiu, Yi-Jen; DenBaars, Steven P.; Bowers, John E.

    2003-04-01

    We propose and demonstrate a long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of a (311)B InP-based active region and (100) GaAs-based distributed Bragg reflectors (DBRs), with an aim to control the in-plane polarization of output power. Crystal growth on (311)B InP substrates was performed under low-migration conditions to achieve good crystalline quality. The VCSEL was fabricated by wafer bonding, which enables us to combine different materials regardless of their lattice and orientation mismatch without degrading their quality. The VCSEL was polarized with a power extinction ratio of 31 dB.

  14. High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

    Science.gov (United States)

    Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A.; Walters, Robert J.; Summers, Geoffrey P.

    1994-01-01

    We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

  15. The analysis of photon pair source at telecom wavelength based on the BBO crystal (Conference Presentation)

    Science.gov (United States)

    Gajewski, Andrzej; Kolenderski, Piotr L.

    2016-10-01

    There are several problems that must be solved in order to increase the distance of quantum communication protocols based on photons as an information carriers. One of them is the dispersion, whose effects can be minimized by engineering spectral properties of transmitted photons. In particular, it is expected that positively correlated photon pairs can be very useful. We present the full characterization of a source of single photon pairs at a telecom wavelength based on type II spontaneous parametric down conversion (SPDC) process in a beta-barium borate (BBO) crystal. In the type II process, a pump photon, which is polarized extraordinarily, splits in a nonlinear medium into signal and idler photons, which are polarized perpendicularly to each other. In order for the process to be efficient a phase matching condition must be fulfilled. These conditions originate from momentum and energy conservation rules and put severe restrictions on source parameters. Seemingly, these conditions force the photon pair to be negatively correlated in their spectral domain. However, it is possible to achieve positive correlation for pulsed pumping. The experimentally available degrees of freedom of a source are the width of the pumping beam, the collected modes' widths, the length of the nonlinear crystal and the duration of the pumping pulse. In our numerical model we use the following figures of merit: the pair production rate, the efficiency of photon coupling into a single mode fiber, the spectral correlation of the coupled photon pair. The last one is defined as the Pearson correlation parameter for a joint spectral distribution. The aim here is to find the largest positive spectral correlation and the highest coupling efficiency. By resorting to the numerical model Ref. [1] we showed in Ref. [2], that by careful adjustment of the pump's and the collected modes' characteristics, one can optimize any of the source's parameters. Our numerical outcomes conform to the

  16. A 311-GHz Fundamental Oscillator Using InP HBT Technology

    Science.gov (United States)

    Gaier, Todd; Fung, King Man; Samoska, Lorene; Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, W.R.

    2010-01-01

    This oscillator uses a single-emitter 0.3- m InP heterojunction bipolar transistor (HBT) device with maximum frequency of oscillation (fmax) greater than 500 GHz. Due to high conductor and substrate losses at submillimeterwave frequencies, a primary challenge is to efficiently use the intrinsic device gain. This was done by using a suitable transmission-line media and circuit topology. The passive components of the oscillator are realized in a twometal process with benzocyclobutene (BCB) used as the primary transmission line dielectric. The circuit was designed using microstrip transmission lines. The oscillator is implemented in a common-base topology due to its inherent instability, and the design includes an on-chip resonator, outputmatching circuitry, and an injection-locking port, the port being used to demonstrate the injection-locking prin ciple. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Ad di tionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. The injection-locking reference signal is generated using a 2 20 GHz frequency synthesizer, followed by a doubler, active tripler, a W-band amplifier, and then a passive tripler. Therefore, the source frequency is multiplied 18 times to obtain a signal above 300 GHz that can be used to injection lock the oscillator. Measurement shows that injection locking has improved the phase noise of the oscillator and can be also used for synchronizing a series of oscillators. A signal conductor is implemented near the BCP -InP interface and the topside of the BCB layer is fully metallized as a signal ground. Because the fields are primarily constrained in the lower permittivity BCB region, this type of transmission line is referred to as an inverted microstrip. In addition, both common-emitter and commonbase circuits were investigated to determine optimum topology for oscillator design. The common -base topology required smaller

  17. Switching characteristics of an InP photonic crystal nanocavity: Experiment and theory

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel

    2013-01-01

    The dynamical properties of an InP photonic crystal nanocavity are experimentally investigated using pump-probe techniques and compared to simulations based on coupled-mode theory. Excellent agreement between experimental results and simulations is obtained when employing a rate equation model...

  18. Design of mm-wave InP DHBT power amplifiers

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Yan, Lei

    2011-01-01

    In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output...

  19. Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas

    2013-01-01

    In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from...

  20. Passive InP regenerator integrated on SOI for the support of broadband silicon modulators

    NARCIS (Netherlands)

    Tassaert, M.; Dorren, H.J.S.; Roelkens, G.; Raz, O.

    2012-01-01

    Passive signal regeneration based on the Membrane InP Switch (MIPS) is demonstrated. Because of the high confinement of light in the active region of the MIPS, the device acts as a saturable absorber with a highly non-linear response. Using this effect, the extinction ratio (ER) of low-ER signals

  1. Investigation of the effects of metal-wire resonators in sub-wavelength array based on time-reversal technique

    International Nuclear Information System (INIS)

    Tu, Hui-Lin; Xiao, Shao-Qiu

    2016-01-01

    The resonant metalens consisting of metal-wire resonators with equally finite length can break the diffraction barrier well suited for super-resolution imaging. In this study, a basic combination constructed by two metal-wire resonators with different lengths is proposed, and its resonant characteristics is analyzed using the method of moments (MoM). Based on the time reversal (TR) technique, this kind of combination can be applied to a sub-wavelength two-element antenna array with a 1/40-wavelength interval to make the elements work simultaneously with little interference in the frequency band of 1.0-1.5 GHz and 1.5-2.0 GHz, respectively. The simulations and experiments show that analysis of MoM and the application of the resonators can be used to design multi-frequency sub-wavelength antenna arrays efficiently. This general design method is convenient and can be used for many applications, such as weakening jamming effectiveness in communication systems, and sub-wavelength imaging in a broad frequency band.

  2. Wavelength interrogation of fiber Bragg grating sensors based on crossed optical Gaussian filters.

    Science.gov (United States)

    Cheng, Rui; Xia, Li; Zhou, Jiaao; Liu, Deming

    2015-04-15

    Conventional intensity-modulated measurements require to be operated in linear range of filter or interferometric response to ensure a linear detection. Here, we present a wavelength interrogation system for fiber Bragg grating sensors where the linear transition is achieved with crossed Gaussian transmissions. This unique filtering characteristic makes the responses of the two branch detections follow Gaussian functions with the same parameters except for a delay. The substraction of these two delayed Gaussian responses (in dB) ultimately leads to a linear behavior, which is exploited for the sensor wavelength determination. Beside its flexibility and inherently power insensitivity, the proposal also shows a potential of a much wider operational range. Interrogation of a strain-tuned grating was accomplished, with a wide sensitivity tuning range from 2.56 to 8.7 dB/nm achieved.

  3. All-Si photodetector for telecommunication wavelength based on subwavelength grating structure and critical coupling

    Directory of Open Access Journals (Sweden)

    Alireza Taghizadeh

    2017-09-01

    Full Text Available We propose an efficient planar all-Si internal photoemission photodetector operating at the telecommunication wavelength of 1550 nm and numerically investigate its optical and electrical properties. The proposed polarization-sensitive detector is composed of an appropriately engineered subwavelength grating structure topped with a silicide layer of nanometers thickness as an absorbing material. It is shown that a nearly-perfect light absorption is possible for the thin silicide layer by its integration to the grating resonator. The absorption is shown to be maximized when the critical coupling condition is satisfied. Simulations show that the external quantum efficiency of the proposed photodetector with a 2-nm-thick PtSi absorbing layer at the center wavelength of 1550 nm can reach up to ∼60%.

  4. High-performance parallel processors based on star-coupled wavelength division multiplexing optical interconnects

    Science.gov (United States)

    Deri, Robert J.; DeGroot, Anthony J.; Haigh, Ronald E.

    2002-01-01

    As the performance of individual elements within parallel processing systems increases, increased communication capability between distributed processor and memory elements is required. There is great interest in using fiber optics to improve interconnect communication beyond that attainable using electronic technology. Several groups have considered WDM, star-coupled optical interconnects. The invention uses a fiber optic transceiver to provide low latency, high bandwidth channels for such interconnects using a robust multimode fiber technology. Instruction-level simulation is used to quantify the bandwidth, latency, and concurrency required for such interconnects to scale to 256 nodes, each operating at 1 GFLOPS performance. Performance scales have been shown to .apprxeq.100 GFLOPS for scientific application kernels using a small number of wavelengths (8 to 32), only one wavelength received per node, and achievable optoelectronic bandwidth and latency.

  5. A wavelength-tunable fiber laser using a novel filter based on a compound interference effect

    Science.gov (United States)

    Zou, Hui; Lou, Shuqin; Su, Wei; Han, Bolin; Shen, Xiao

    2015-01-01

    A wavelength-tunable erbium-doped fiber laser is proposed and experimentally demonstrated by using a novel filter which is formed from a 2  ×  2 3 dB multimode coupler incorporating a segment of polarization maintaining fiber (PMF). By using the filter with 2.1 m lengths of PMF in a ring fiber laser, a stable single wavelength lasing is obtained experimentally. Its 3 dB bandwidth is less than 0.0147 nm and the side mode suppression ratio (SMSR) is higher than 58.91 dB. Experimental results demonstrate that mode competition can be effectively suppressed and the SMSR can be improved due to the compound interference effect aroused by the novel filter. Meanwhile the stability of the output lasing can be enhanced. By appropriately adjusting the polarization controllers (PCs), the output lasing wavelength can be tuned from 1563.51 to 1568.21 nm. This fiber laser has the advantage of a simple structure and stable operation at room temperature.

  6. Highly doped InP as a low loss plasmonic material for mid-IR region.

    Science.gov (United States)

    Panah, M E Aryaee; Takayama, O; Morozov, S V; Kudryavtsev, K E; Semenova, E S; Lavrinenko, A V

    2016-12-12

    We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated by the excitation of surface plasmon-polaritons in a periodically structured epilayer. Characterization shows good agreement between the theory and experimental results and confirms that highly doped InP is an effective plasmonic material aiming it for applications in the mid-IR wavelength range.

  7. Thermal diffusion in nanostructured porous InP

    International Nuclear Information System (INIS)

    Srinivasan, R.; Ramachandran, K.

    2008-01-01

    Nanostructured porous InP samples were prepared by electrochemical anodic dissolution of InP for various current densities and etching periods. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. Thermal properties studies by photoacoustic (PA) spectroscopy revealed one order decrease in thermal conductivity of porous InP compared to the bulk. Further it is shown that the thermal conductivity of porous InP decreases with decrease in size of the particles. (author)

  8. High resistivity in InP by helium bombardment

    International Nuclear Information System (INIS)

    Focht, M.W.; Macrander, A.T.; Schwartz, B.; Feldman, L.C.

    1984-01-01

    Helium implants over a fluence range from 10 11 to 10 16 ions/cm 2 , reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 10 9 Ω cm for p-type InP and of 10 3 Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling

  9. InP Solar Cells and their Flight Experiments

    OpenAIRE

    TAKAHASHI, Keiji; YAMAGUCHI, Masafumi; TAKAMOTO, Tatsuya; IKEGAMI, Shingo; OHNISHI, Akira; HAYASHI, Tomonao; USHIROKAWA, Akio; KOHBATA, Masahiko; ARAI, Hidetoshi; HASHIMOTO, Katsumasa; ORH, Takeshi; OKAZAKI, Hitoshi; TAKAMURA, Hideto; URA, Mitsuru; OHMORI, Masamichi

    1992-01-01

    We have developed high-efficiency homojunction 1 cm × 2 cm InP space solar cells by diffusing In_2S_3 into p type InP substrates and investigated their fundamental characteristics such as electrical and mechnical characteristics and thermal properties. On the radiation resistant mechanism of InP cells, we have studied InP cells fabricated at NTT Laboratories and found superior properties such as room temperture annealing and minority carrier injection enhanced annealing phenomena for radiatio...

  10. A Study of Polycrystalline Silicon Damage Features Based on Nanosecond Pulse Laser Irradiation with Different Wavelength Effects

    OpenAIRE

    Xu, Jiangmin; Chen, Chao; Zhang, Tengfei; Han, Zhenchun

    2017-01-01

    Based on PVDF (piezoelectric sensing techniques), this paper attempts to study the propagation law of shock waves in brittle materials during the process of three-wavelength laser irradiation of polysilicon, and discusses the formation mechanism of thermal shock failure. The experimental results show that the vapor pressure effect and the plasma pressure effect in the process of pulsed laser irradiation lead to the splashing of high temperature and high density melt. With the decrease of the ...

  11. Polarization dependence of two-photon absorption coefficient and nonlinear susceptibility tensor in InP

    International Nuclear Information System (INIS)

    Matsusue, Toshio; Bando, Hiroyuki; Fujita, Shoichi; Takayama, Yusuke

    2011-01-01

    Two-photon absorption (TPA) effect in (001) InP is investigated using fs laser. Its dependences on wavelength and polarization are clarified by single and double beam methods with linearly polarized lights. Characteristic features are revealed and discussed with scaling law, crystal bonding and mutual relation of polarizations for double beams. The results are successfully analyzed on the basis of the third-order susceptibility tensor for comprehensive understanding of TPA effect at any polarization geometry. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Exploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In0.53Ga0.47As/InP thin-film photodetectors

    International Nuclear Information System (INIS)

    Fu, Dong; Zhu, Xi; Li, Jian; Xu, Yun; Song, Guofeng; Wei, Xin; Liu, Jietao

    2015-01-01

    High-index dielectric and semiconductor nanoparticles with the characteristics of low absorption loss and strong scattering have attracted more and more attention for improving performance of thin-film photovoltaic devices. In this paper, we focus our attention on InP nanoparticles and study the influence of the substrate and the geometrical configurations on their scattering properties. We demonstrate that, compared with the InP sphere, the InP cylinder has higher coupling efficiency due to the stronger interactions between the optical mode in the nanoparticle and its induced mirror image in the substrate. Moreover, we propose novel thin-film InGaAs photodetectors integrated with the periodically arranged InP nanoparticles on the substrate. Broadband light absorption enhancement is achieved over the wavelength range between 1.0 μm and 1.7 μm. The highest average absorption enhancement of 59.7% is realized for the photodetector with the optimized cylinder InP nanoparticles. These outstanding characteristics attribute to the preferentially forward scattering of single InP nanoparticle along with the effective coupling of incident light into the guided modes through the collective diffraction effect of InP nanoparticles array

  13. Wavelength modulation spectroscopy--digital detection of gas absorption harmonics based on Fourier analysis.

    Science.gov (United States)

    Mei, Liang; Svanberg, Sune

    2015-03-20

    This work presents a detailed study of the theoretical aspects of the Fourier analysis method, which has been utilized for gas absorption harmonic detection in wavelength modulation spectroscopy (WMS). The lock-in detection of the harmonic signal is accomplished by studying the phase term of the inverse Fourier transform of the Fourier spectrum that corresponds to the harmonic signal. The mathematics and the corresponding simulation results are given for each procedure when applying the Fourier analysis method. The present work provides a detailed view of the WMS technique when applying the Fourier analysis method.

  14. Integral equation based stability analysis of short wavelength drift modes in tokamaks

    International Nuclear Information System (INIS)

    Hirose, A.; Elia, M.

    2003-01-01

    Linear stability of electron skin-size drift modes in collisionless tokamak discharges has been investigated in terms of electromagnetic, kinetic integral equations in which neither ions nor electrons are assumed to be adiabatic. A slab-like ion temperature gradient mode persists in such a short wavelength regime. However, toroidicity has a strong stabilizing influence on this mode. In the electron branch, the toroidicity induced skin-size drift mode previously predicted in terms of local kinetic analysis has been recovered. The mode is driven by positive magnetic shear and strongly stabilized for negative shear. The corresponding mixing length anomalous thermal diffusivity exhibits favourable isotope dependence. (author)

  15. Measurement of third-order nonlinear susceptibility tensor in InP using extended Z-scan technique with elliptical polarization

    Science.gov (United States)

    Oishi, Masaki; Shinozaki, Tomohisa; Hara, Hikaru; Yamamoto, Kazunuki; Matsusue, Toshio; Bando, Hiroyuki

    2018-05-01

    The elliptical polarization dependence of the two-photon absorption coefficient β in InP has been measured by the extended Z-scan technique for thick materials in the wavelength range from 1640 to 1800 nm. The analytical formula of the Z-scan technique has been extended with consideration of multiple reflections. The Z-scan results have been fitted very well by the formula and β has been evaluated accurately. The three independent elements of the third-order nonlinear susceptibility tensor in InP have also been determined accurately from the elliptical polarization dependence of β.

  16. Solvothermal synthesis of InP quantum dots and their enhanced luminescent efficiency by post-synthetic treatments.

    Science.gov (United States)

    Byun, Ho-June; Lee, Ju Chul; Yang, Heesun

    2011-03-01

    InP quantum dots (QDs) were solvothermally synthesized by using a greener phosphorus source of P(N(CH(3))(2))(3) instead of highly toxic P(TMS)(3) widely used, and subsequently subjected to a size-sorting processing. While as-grown QDs showed an undetectably low emission intensity, post-synthetic treatments such as photo-etching, photo-radiation, and photo-assisted ZnS shell coating gave rise to a substantial increase in emission efficiency due to the effective removal and passivation of surface states. The emission efficiency of the photo-etched QDs was further enhanced by a consecutive UV photo-radiation, attributable to the photo-oxidation at QD surface. Furthermore, a relatively thick ZnS shell on the surface of InP QDs that were surface-modified with hydrophilic ligands beforehand was photochemically generated in an aqueous solution at room temperature. The resulting InP/ZnS core/shell QDs, emitting from blue to red wavelengths, were more efficient than the above photo-treated InP QDs, and their luminescent properties (emission bandwidth and quantum yield) were comparable to those of InP QDs synthesized with P(TMS)(3). Structural, size, and compositional analyses on InP/ZnS QDs were also conducted to elucidate their core/shell structure. Copyright © 2010 Elsevier Inc. All rights reserved.

  17. Simultaneous wavelength and format conversion in SDN/NFV for flexible optical network based on FWM in SOA

    Science.gov (United States)

    Zhan, Yueying; Wang, Danshi; Zhang, Min

    2018-04-01

    We propose an all-optical wavelength and format conversion model (CM) for a dynamic data center interconnect node and coherent passive optical network (PON) optical network unit (ONU) in software-defined networking and network function virtualization system based on four-wave mixing in a semiconductor optical amplifier. Five wavelength converted DQPSK signals and two format converted DPSK signals are generated; the performances of the generated signals for two strategies of setting CM in the data center interconnect node and coherent PON ONU, which are over 10 km fiber transmission, have been verified. All of the converted signals are with a power penalty less than 2.2 dB at FEC threshold of 3.8 × 10 - 3, and the optimum bias current of SOA is 300 mA.

  18. Comparison of Mg-based multilayers for solar He II radiation at 30.4 nm wavelength

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Jingtao; Zhou Sika; Li Haochuan; Huang Qiushi; Wang Zhanshan; Le Guen, Karine; Hu, Min-Hui; Andre, Jean-Michel; Jonnard, Philippe

    2010-07-10

    Mg-based multilayers, including SiC/Mg, Co/Mg, B4C/Mg, and Si/Mg, are investigated for solar imaging and a He II calibration lamp at a 30.4 nm wavelength. These multilayers were fabricated by a magnetron sputtering method and characterized by x-ray reflection. The reflectivities of these multilayers were measured by synchrotron radiation. Near-normal-incidence reflectivities of Co/Mg and SiC/Mg multilayer mirrors are as high as 40.3% and 44.6%, respectively, while those of B4C/Mg and Si/Mg mirrors are too low for application. The measured results suggest that SiC/Mg, Co/Mg multilayers are promising for a 30.4 nm wavelength.

  19. Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Rumyantsev, V. V., E-mail: rumyantsev@ipm.sci-nnov.ru; Fadeev, M. A.; Morozov, S. V.; Dubinov, A. A.; Kudryavtsev, K. E.; Kadykov, A. M. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Tuzov, I. V. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation); Dvoretskii, S. A.; Mikhailov, N. N. [Russian Academy of Sciences, Institute for Semiconductor Physics, Siberian Branch (Russian Federation); Gavrilenko, V. I. [Novosibirsk State University (Russian Federation); Teppe, F. [Universite Montpellier II, Laboratoire Charles Coulomb (L2C) (France)

    2016-12-15

    The interband photoconductivity and photoluminescence in narrow-gap HgCdTe-based waveguide structures with quantum wells (QWs) (designed for long-wavelength stimulated emission under optical pumping) are investigated. The photoconductivity relaxation times in n-type structures reach several microseconds, due to which stimulated emission at a wavelength of 10.2 μm occurs at a low threshold pump intensity (~100 W/cm{sup 2}) at 20 K. In the p-type structures obtained by annealing (to increase the mercury vacancy concentration), even spontaneous emission from the QWs is not detected because of a dramatic decrease in the carrier lifetime with respect to Shockley–Read–Hall nonradiative recombination.

  20. Control over the resonance wavelength of fibre Bragg gratings using resistive coatings based on single-wall carbon nanotubes

    Science.gov (United States)

    Gladush, Yu. G.; Medvedkov, O. I.; Vasil'ev, S. A.; Kopylova, D. S.; Yakovlev, V. Ya.; Nasibulin, A. G.

    2016-10-01

    We demonstrate that a thin resistive coating based on single-wall carbon nanotubes applied to the lateral surface of an optical fibre allows it to be uniformly heated up to a temperature of ∼ 400 \\circ{\\text{C}} without damage to the coating. Using a fibre Bragg grating (FBG) as an example, we assess the efficiency of resonance wavelength thermal tuning and examine frequency characteristics that can be achieved using such coating. In particular, we show that the resonance wavelength of the FBG can be tuned over 3.2 {\\text{nm}} with an efficiency of 8.7 {\\text{nm}} {\\text{W}}-1 and time constant of ∼ 0.4 {\\text{s}}.

  1. (LBA-and-WRM)-based DBA scheme for multi-wavelength upstream transmission supporting 10 Gbps and 1 Gbps in MAN

    Science.gov (United States)

    Zhang, Yuchao; Gan, Chaoqin; Gou, Kaiyu; Xu, Anni; Ma, Jiamin

    2018-01-01

    DBA scheme based on Load balance algorithm (LBA) and wavelength recycle mechanism (WRM) for multi-wavelength upstream transmission is proposed in this paper. According to 1 Gbps and 10 Gbps line rates, ONUs are grouped into different VPONs. To facilitate wavelength management, resource pool is proposed to record wavelength state. To realize quantitative analysis, a mathematical model describing metro-access network (MAN) environment is presented. To 10G-EPON upstream, load balance algorithm is designed to ensure load distribution fairness for 10G-OLTs. To 1G-EPON upstream, wavelength recycle mechanism is designed to share remained wavelengths. Finally, the effectiveness of the proposed scheme is demonstrated by simulation and analysis.

  2. [Research on the temperature field detection method of hot forging based on long-wavelength infrared spectrum].

    Science.gov (United States)

    Zhang, Yu-Cun; Wei, Bin; Fu, Xian-Bin

    2014-02-01

    A temperature field detection method based on long-wavelength infrared spectrum for hot forging is proposed in the present paper. This method combines primary spectrum pyrometry and three-stage FP-cavity LCTF. By optimizing the solutions of three group nonlinear equations in the mathematical model of temperature detection, the errors are reduced, thus measuring results will be more objective and accurate. Then the system of three-stage FP-cavity LCTF was designed on the principle of crystal birefringence. The system realized rapid selection of any wavelength in a certain wavelength range. It makes the response of the temperature measuring system rapid and accurate. As a result, without the emissivity of hot forging, the method can acquire exact information of temperature field and effectively suppress the background light radiation around the hot forging and ambient light that impact the temperature detection accuracy. Finally, the results of MATLAB showed that the infrared spectroscopy through the three-stage FP-cavity LCTF could meet the requirements of design. And experiments verified the feasibility of temperature measuring method. Compared with traditional single-band thermal infrared imager, the accuracy of measuring result was improved.

  3. Optical fiber-based full Mueller polarimeter for endoscopic imaging using a two-wavelength simultaneous measurement method.

    Science.gov (United States)

    Vizet, Jérémy; Manhas, Sandeep; Tran, Jacqueline; Validire, Pierre; Benali, Abdelali; Garcia-Caurel, Enric; Pierangelo, Angelo; De Martino, Antonello; Pagnoux, Dominique

    2016-07-01

    This paper reports a technique based on spectrally differential measurement for determining the full Mueller matrix of a biological sample through an optical fiber. In this technique, two close wavelengths were used simultaneously, one for characterizing the fiber and the other for characterizing the assembly of fiber and sample. The characteristics of the fiber measured at one wavelength were used to decouple its contribution from the measurement on the assembly of fiber and sample and then to extract sample Mueller matrix at the second wavelength. The proof of concept was experimentally validated by measuring polarimetric parameters of various calibrated optical components through the optical fiber. Then, polarimetric images of histological cuts of human colon tissues were measured, and retardance, diattenuation, and orientation of the main axes of fibrillar regions were displayed. Finally, these images were successfully compared with images obtained by a free space Mueller microscope. As the reported method does not use any moving component, it offers attractive integration possibilities with an endoscopic probe.

  4. Liquid level and temperature sensing by using dual-wavelength fiber laser based on multimode interferometer and FBG in parallel

    Science.gov (United States)

    Sun, Chunran; Dong, Yue; Wang, Muguang; Jian, Shuisheng

    2018-03-01

    The detection of liquid level and temperature based on a fiber ring cavity laser sensing configuration is presented and demonstrated experimentally. The sensing head contains a fiber Bragg grating (FBG) and a single-mode-cladding-less-single-mode multimode interferometer, which also functions as wavelength-selective components of the fiber laser. When the liquid level or temperature is applied on the sensing head, the pass-band peaks of both multimode interference (MMI) filter and FBG filter vary and the two output wavelengths of the laser shift correspondingly. In the experiment, the corresponding sensitivities of the liquid level with four different refractive indices (RI) in the deep range from 0 mm to 40 mm are obtained and the sensitivity enhances with the RI of the liquid being measured. The maximum sensitivity of interferometer is 106.3 pm/mm with the RI of 1.391. For the temperature measurement, a sensitivity of 10.3 pm/°C and 13.8 pm/°C are achieved with the temperature ranging from 0 °C to 90 °C corresponding to the two lasing wavelengths selective by the MMI filter and FBG, respectively. In addition, the average RI sensitivity of 155.77 pm/mm/RIU is also obtained in the RI range of 1.333-1.391.

  5. Uncooled middle wavelength infrared photoconductors based on (111) and (100) oriented HgCdTe

    Science.gov (United States)

    Madejczyk, Paweł; Kębłowski, Artur; Gawron, Waldemar; Martyniuk, Piotr; Kopytko, Małgorzata; Stępień, Dawid; Rutkowski, Jarosław; Piotrowski, Józef; Piotrowski, Adam; Rogalski, Antoni

    2017-09-01

    We present progress in metal organic chemical vapor deposition (MOCVD) growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool for the fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping, and without post grown ex-situ annealing. Surface morphology, residual background concentration, and acceptor doping efficiency are compared in (111) and (100) oriented HgCdTe epilayers. At elevated temperatures, the carrier lifetime in measured p-type photoresistors is determined by Auger 7 process with about one order of magnitude difference between theoretical and experimental values. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for medium wavelength infrared photoconductors operated in high-operating temperature conditions.

  6. Tilted Bragg grating multipoint sensor based on wavelength-gated cladding-modes coupling.

    Science.gov (United States)

    Caucheteur, Christophe; Mégret, Patrice; Cusano, Andrea

    2009-07-10

    In recent years, tilted fiber Bragg gratings (TFBGs) have been demonstrated to be a promising technological platform for sensing applications such as the measurement of axial strain, bending, vibration, and refractive index. However, complex spectral measurements combined with the difficulty of using TFBGs in a quasi-distributed sensors network limit the practical exploitation of this assessed technology. To address this issue, we propose a hybrid configuration involving uniform and TFBGs working in reflection, which makes the demodulation technique easier and allows multipoint sensing. This configuration provides a narrowband reflection signal that is modulated by the wavelength selective losses associated with some TFBG's cladding-modes resonances. We report here the operating principle of the proposed device. An experimental validation is presented for refractive-index sensing purposes.

  7. Tunable All-Optical Wavelength Conversion Based on Cascaded SHG/DFG in a Ti:PPLN Waveguide Using a Single CW Control Laser

    DEFF Research Database (Denmark)

    Hu, Hao; Nouroozi, Rahman; Wang, Wenrui

    2012-01-01

    Tunable all-optical wavelength conversion (AOWC) of a 40-Gb/s RZ-OOK data signal based on cascaded second-harmonic generation (SHG) and difference-frequency generation (DFG) in a Ti:PPLN waveguide is demonstrated. Error-free performances with negligible power penalty are achieved for the wavelength...

  8. Indium phosphide (InP) for optical interconnects

    NARCIS (Netherlands)

    Lebby, M.; Ristic, S.; Calabretta, N.; Stabile, R.; Tekin, T.; Pitwon, R.; Håkansson, A.; Pleros, N.

    2016-01-01

    We present InP as the incumbent technology for data center transceiver and switching optics. We review the most popular InP monolithic integration approaches in light of photonic integration being recognized as an increasingly important technology for data center optics. We present Multi-Guide

  9. Peptides for functionalization of InP semiconductors.

    Science.gov (United States)

    Estephan, Elias; Saab, Marie-belle; Larroque, Christian; Martin, Marta; Olsson, Fredrik; Lourdudoss, Sebastian; Gergely, Csilla

    2009-09-15

    The challenge is to achieve high specificity in molecular sensing by proper functionalization of micro/nano-structured semiconductors by peptides that reveal specific recognition for these structures. Here we report on surface modification of the InP semiconductors by adhesion peptides produced by the phage display technique. An M13 bacteriophage library has been used to screen 10(10) different peptides against the InP(001) and the InP(111) surfaces to finally isolate specific peptides for each orientation of the InP. MALDI-TOF/TOF mass spectrometry has been employed to study real affinity of the peptide towards the InP surfaces. The peptides serve for controlled placement of biotin onto InP to bind then streptavidin. Our Atomic Force Microscopy study revealed a total surface coverage of molecules when the InP surface was functionalized by its specific biotinylated peptide (YAIKGPSHFRPS). Finally, fluorescence microscopy has been employed to demonstrate the preferential attachment of the peptide onto a micro-patterned InP surface. Use of substrate specific peptides could present an alternative solution for the problems encountered in the actually existing sensing methods and molecular self-assembly due to the unwanted unspecific interactions.

  10. Thermal diffusion in nanostructured porous InP

    Indian Academy of Sciences (India)

    Nanostructured porous InP samples were prepared by electrochemical anodic dissolution of InP for various current densities and etching periods. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. Thermal properties studied by photoacoustic (PA) spectroscopy ...

  11. Development of photonic-crystal-fiber-based optical coupler with a broad operating wavelength range of 800 nm

    International Nuclear Information System (INIS)

    Yoon, Min-Seok; Kwon, Oh-Jang; Kim, Hyun-Joo; Chu, Su-Ho; Kim, Gil-Hwan; Lee, Sang-Bae; Han, Young-Geun

    2010-01-01

    We developed a broadband optical coupler based on a photonic crystal fiber (PCF), which is very useful for applications to optical coherence tomography (OCT). The PCF-based coupler is fabricated by using a fused biconical tapering (FBT) method. The PCF has six hexagonally-stacked layers of air holes. The PCF-based coupler has a nearly-flat 50/50 coupling ratio in a broad bandwidth range of 800 nm, which is much wider than that previously reported for a PCF-based coupler and a singlemode-fiber-based coupler. The bandwidth and the bandedge wavelength of the broadband coupler are controlled by changing the elongation length. The fabricated broadband optical coupler has great potential for realizing a broadband interferogram with a high resolution in an OCT system.

  12. CENTRAL WAVELENGTH ADJUSTMENT OF LIGHT EMITTING SOURCE IN INTERFEROMETRIC SENSORS BASED ON FIBER-OPTIC BRAGG GRATINGS

    Directory of Open Access Journals (Sweden)

    A. S. Aleynik

    2015-09-01

    Full Text Available The paper is focused on the investigation of fiber-optic interferometric sensor based on the array of fiber Bragg gratings. Reflection spectra displacement mechanism of the fiber Bragg gratings under the external temperature effects and the static pressure is described. The experiment has shown that reflection spectra displacement of Bragg gratings reduces the visibility of the interference pattern. A method of center wavelength adjustment is proposed for the optical radiation source in accord ance with the current Bragg gratings reflection spectra based on the impulse relative modulation of control signal for the Peltier element controller. The semiconductor vertical-cavity surface-emitting laser controlled by a pump driver is used as a light source. The method is implemented by the Peltier element controller regulating and stabilizing the light source temperature, and a programmable logic-integrated circuit monitoring the Peltier element controller. The experiment has proved that the proposed method rendered possible to regulate the light source temperature at a pitch of 0.05 K and adjust the optical radiation source center wavelength at a pitch of 0.05 nm. Experimental results have revealed that the central wavelength of the radiation adjustment at a pitch of 0.005 nm gives the possibility for the capacity of the array consisting of four opticalfiber sensors based on the fiber Bragg gratings. They are formed in one optical fiber under the Bragg grating temperature change from 0° C to 300° C and by the optical fiber mechanical stretching by the force up to 2 N.

  13. Low-latency optical parallel adder based on a binary decision diagram with wavelength division multiplexing scheme

    Science.gov (United States)

    Shinya, A.; Ishihara, T.; Inoue, K.; Nozaki, K.; Kita, S.; Notomi, M.

    2018-02-01

    We propose an optical parallel adder based on a binary decision diagram that can calculate simply by propagating light through electrically controlled optical pass gates. The CARRY and CARRY operations are multiplexed in one circuit by a wavelength division multiplexing scheme to reduce the number of optical elements, and only a single gate constitutes the critical path for one digit calculation. The processing time reaches picoseconds per digit when we use a 100-μm-long optical path gates, which is ten times faster than a CMOS circuit.

  14. Lithographic wavelength control of an external cavity laser with a silicon photonic crystal cavity-based resonant reflector.

    Science.gov (United States)

    Liles, Alexandros A; Debnath, Kapil; O'Faolain, Liam

    2016-03-01

    We report the experimental demonstration of a new design for external cavity hybrid lasers consisting of a III-V semiconductor optical amplifier (SOA) with fiber reflector and a photonic crystal (PhC)-based resonant reflector on SOI. The silicon reflector is composed of an SU8 polymer bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and side-mode suppression ratios of more than 25 dB.

  15. Development of a two-dimensional imaging detector based on a neutron scintillator with wavelength-shifting fibers

    CERN Document Server

    Sakai, K; Oku, T; Morimoto, K; Shimizu, H M; Tokanai, F; Gorin, A; Manuilov, I V; Ryazantsev, A; Ino, T; Kuroda, K; Suzuki, J

    2002-01-01

    For evaluating neutron optical devices, a two-dimensional (2D) detector based on a neutron scintillator with wavelength-shifting fibers has been developed at RIKEN. We have investigated a ZnS(Ag)+LiF and a Li glass plate as neutron scintillators with the coding technique for realizing the large sensitive area of 50 x 50 mm sup 2. After fabricating the 2D detector, its performance was tested using cold neutrons at JAERI. As a result, a spatial resolution of propor to 1.0 mm was obtained. (orig.)

  16. Improvement of the fringe analysis algorithm for wavelength scanning interferometry based on filter parameter optimization.

    Science.gov (United States)

    Zhang, Tao; Gao, Feng; Muhamedsalih, Hussam; Lou, Shan; Martin, Haydn; Jiang, Xiangqian

    2018-03-20

    The phase slope method which estimates height through fringe pattern frequency and the algorithm which estimates height through the fringe phase are the fringe analysis algorithms widely used in interferometry. Generally they both extract the phase information by filtering the signal in frequency domain after Fourier transform. Among the numerous papers in the literature about these algorithms, it is found that the design of the filter, which plays an important role, has never been discussed in detail. This paper focuses on the filter design in these algorithms for wavelength scanning interferometry (WSI), trying to optimize the parameters to acquire the optimal results. The spectral characteristics of the interference signal are analyzed first. The effective signal is found to be narrow-band (near single frequency), and the central frequency is calculated theoretically. Therefore, the position of the filter pass-band is determined. The width of the filter window is optimized with the simulation to balance the elimination of the noise and the ringing of the filter. Experimental validation of the approach is provided, and the results agree very well with the simulation. The experiment shows that accuracy can be improved by optimizing the filter design, especially when the signal quality, i.e., the signal noise ratio (SNR), is low. The proposed method also shows the potential of improving the immunity to the environmental noise by adapting the signal to acquire the optimal results through designing an adaptive filter once the signal SNR can be estimated accurately.

  17. THE STABILITY OF LOW SURFACE BRIGHTNESS DISKS BASED ON MULTI-WAVELENGTH MODELING

    International Nuclear Information System (INIS)

    MacLachlan, J. M.; Wood, K.; Matthews, L. D.; Gallagher, J. S.

    2011-01-01

    To investigate the structure and composition of the dusty interstellar medium (ISM) of low surface brightness (LSB) disk galaxies, we have used multi-wavelength photometry to construct spectral energy distributions for three low-mass, edge-on LSB galaxies (V rot = 88-105 km s -1 ). We use Monte Carlo radiation transfer codes that include the effects of transiently heated small grains and polycyclic aromatic hydrocarbon molecules to model and interpret the data. We find that, unlike the high surface brightness galaxies previously modeled, the dust disks appear to have scale heights equal to or exceeding their stellar scale heights. This result supports the findings of previous studies that low-mass disk galaxies have dust scale heights comparable to their stellar scale heights and suggests that the cold ISM of low-mass, LSB disk galaxies may be stable against fragmentation and gravitational collapse. This may help to explain the lack of observed dust lanes in edge-on LSB galaxies and their low current star formation rates. Dust masses are found in the range (1.16-2.38) x 10 6 M sun , corresponding to face-on (edge-on), V-band, optical depths 0.034 ∼ face ∼ eq ∼< 1.99).

  18. Millimetre and sub-mm wavelength radiation sources based on discrete Josephson junction arrays

    International Nuclear Information System (INIS)

    Darula, M.; Beuven, S.; Doderer, T.

    1999-01-01

    This paper reviews the present status and future perspectives of discrete Josephson junction arrays for applications as sub-mm wavelength radiation sources. It is intended to cover the whole field, i.e. theory, fabrication and experimental results. The theoretical part reviews the fundamental aspects of Josephson junctions for oscillator applications and introduces the different possible array types. The recent results of analytical as well as numerical investigations are discussed. After the description of the fabrication of both low-T c as well as high-T c superconductor Josephson junctions and arrays, methods to investigate the array dynamics experimentally are mentioned. Finally, the recent experimental results are reviewed. This topic is divided into two parts, the first dealing with low-T c arrays, the second with high-T c arrays. The different possibilities to design arrays and to include them in practical applications are discussed and compared, with special emphasis on those experiments where radiation was generated successfully. The article is completed with a discussion of the most important experimental results. (author)

  19. ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

    Science.gov (United States)

    Huang, Min; Chen, Jianxin; Xu, Jiajia; Wang, Fangfang; Xu, Zhicheng; He, Li

    2018-05-01

    In this work, we study and report the dry etching processes for InAs-based InAs/GaAsSb strain-free superlattice long wavelength infrared (LWIR) detectors. The proper etching parameters were first obtained through the parametric studies of Inductively Coupled Plasma (ICP) etching of both InAs and GaSb bulk materials in Cl2/N2 plasmas. Then an InAs-based InAs/GaAsSb superlattice LWIR detector with PπN structure was fabricated by using the optimized etching parameters. At 80 K, the detector exhibits a 100% cut-off wavelength of 12 μm and a responsivity of 1.5 A/W. Moreover, the dark current density of the device under a bias of -200 mV reaches 5.5 × 10-4 A/cm2, and the R0A is 15 Ω cm2. Our results pave the way towards InAs-based superlattice LWIR detectors with better performances.

  20. Photonic generation of FCC-compliant UWB pulses based on modified Gaussian quadruplet and incoherent wavelength-to-time conversion

    Science.gov (United States)

    Mu, Hongqian; Wang, Muguang; Tang, Yu; Zhang, Jing; Jian, Shuisheng

    2018-03-01

    A novel scheme for the generation of FCC-compliant UWB pulse is proposed based on modified Gaussian quadruplet and incoherent wavelength-to-time conversion. The modified Gaussian quadruplet is synthesized based on linear sum of a broad Gaussian pulse and two narrow Gaussian pulses with the same pulse-width and amplitude peak. Within specific parameter range, FCC-compliant UWB with spectral power efficiency of higher than 39.9% can be achieved. In order to realize the designed waveform, a UWB generator based on spectral shaping and incoherent wavelength-to-time mapping is proposed. The spectral shaper is composed of a Gaussian filter and a programmable filter. Single-mode fiber functions as both dispersion device and transmission medium. Balanced photodetection is employed to combine linearly the broad Gaussian pulse and two narrow Gaussian pulses, and at same time to suppress pulse pedestals that result in low-frequency components. The proposed UWB generator can be reconfigured for UWB doublet by operating the programmable filter as a single-band Gaussian filter. The feasibility of proposed UWB generator is demonstrated experimentally. Measured UWB pulses match well with simulation results. FCC-compliant quadruplet with 10-dB bandwidth of 6.88-GHz, fractional bandwidth of 106.8% and power efficiency of 51% is achieved.

  1. Bulk and interface defects in electron irradiated InP

    International Nuclear Information System (INIS)

    Peng Chen; Sun Heng-hui

    1989-01-01

    Systematic studies on the structure of defects in InP caused by electron irradiation are conducted based on experimental measurements and theoretical calculations. The rates of introduction and annealing-out temperatures of In and P vancancies are estimated using proper theoretical models. These calculations reveal that after room temperature irradiation only complexes may exist. It is also supported by our experimental data that the sum of introducing rates of three detected levels are less than the theoretical value calculated for single vacancies. According to our equation on the relation between interface states and DLTS signal and from the results of computer calculation we believe that the broad peak appearing in the DLTS diagram before irradiation is related to interface states. Its disappearance after electron irradiation suggests the reduction of interface states; this is further confirmed by the reduction of surface recombination rate derived from the results of surface photovoltage measurement

  2. Limitations of Cl2/O2-based ICP-RIE of deep holes for planar photonic crystals in InP

    International Nuclear Information System (INIS)

    Kaspar, Peter; Fougner, Christopher; Kappeler, Roman; Jaeckel, Heinz

    2012-01-01

    A detailed study of dry-etching of high-aspect-ratio holes into an indium phosphide substrate is presented for a Cl 2 /O 2 -based plasma chemistry. The etching is performed in an inductively coupled plasma reactive ion etching reactor. The separate influence of the various etching parameters on the quality of the etched holes is identified. Quality measures such as high aspect ratio, hole cylindricity and verticality as well as sidewall smoothness can be controlled by varying the ICP power, the relative O 2 flow rate and the self-bias of the plasma. We were able to clearly identify trade-offs that have to be made and limitations of the etching chemistry/technology used: If the aspect ratio improves, then the cylindricity also improves, whereas the verticality and the sidewall smoothness degrade. In previous reports, a certain ambiguity is generally observed in the sense that different process parameters exhibit partially contradicting trade-offs. We show that this behaviour can be remedied by a careful selection of the variable parameters. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Experimental demonstration of wavelength conversion between ps-pulses based on cascaded sum- and difference frequency generation (SFG+DFG) in LiNbO3 waveguides

    Science.gov (United States)

    Wang, Jian; Sun, Junqiang; Lou, Chuanhong; Sun, Qizhen

    2005-09-01

    All-optical wavelength conversion between ps-pulses based on cascaded sum- and difference frequency generation (SFG+DFG) is proposed and experimentally demonstrated in periodically poled LiNbO3 (PPLN) waveguides. The signal pulse with 40-GHz repetition rate and 1.57- ps pulse width is adopted. The converted idler wavelength can be tuned from 1527.4 to 1540.5nm as the signal wavelength is varied from 1561.9 to 1548.4nm. No obvious changes of the pulse shape and width, also no chirp are observed in the converted idler pulse. The results imply that single-to-multiple channel wavelength conversions can be achieved by appropriately tuning the two pump wavelengths.

  4. Precision measurement of refractive index of air based on laser synthetic wavelength interferometry with Edlén equation estimation.

    Science.gov (United States)

    Yan, Liping; Chen, Benyong; Zhang, Enzheng; Zhang, Shihua; Yang, Ye

    2015-08-01

    A novel method for the precision measurement of refractive index of air (n(air)) based on the combining of the laser synthetic wavelength interferometry with the Edlén equation estimation is proposed. First, a n(air_e) is calculated from the modified Edlén equation according to environmental parameters measured by low precision sensors with an uncertainty of 10(-6). Second, a unique integral fringe number N corresponding to n(air) is determined based on the calculated n(air_e). Then, a fractional fringe ε corresponding to n(air) with high accuracy can be obtained according to the principle of fringe subdivision of laser synthetic wavelength interferometry. Finally, high accurate measurement of n(air) is achieved according to the determined fringes N and ε. The merit of the proposed method is that it not only solves the problem of the measurement accuracy of n(air) being limited by the accuracies of environmental sensors, but also avoids adopting complicated vacuum pumping to measure the integral fringe N in the method of conventional laser interferometry. To verify the feasibility of the proposed method, comparison experiments with Edlén equations in short time and in long time were performed. Experimental results show that the measurement accuracy of n(air) is better than 2.5 × 10(-8) in short time tests and 6.2 × 10(-8) in long time tests.

  5. Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

    Science.gov (United States)

    Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  6. Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

    1996-01-01

    Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

  7. Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region.

    Science.gov (United States)

    Alyabyeva, L N; Zhukova, E S; Belkin, M A; Gorshunov, B P

    2017-08-04

    We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2-700 cm -1 (0.06-21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.

  8. Epitaxial growth of InP on SI by MOCVD

    International Nuclear Information System (INIS)

    Konushi, F.; Seki, A.; Kudo, J.; Sato, H.; Kakimoto, S.; Fukushima, T.; Kubota, Y.; Koba, M.

    1988-01-01

    The authors have studied the heteroepitaxial growth of InP on large diameter Si substrates using MOCVD. A new MOCVD system with four inch wafer size capability was utilized in the growth. Single domain InP films have been successfully grown on four inch Si substrates by using a new heterostructure with a thin GaAs intermediate layer. In this paper, the authors describe the crystalline quality and residual stress of InP epilayers, estimated by etch pit density and x-ray diffraction, respectively. The authors also reports on the reduction of EPD by post-growth annealing

  9. Small-pixel long wavelength infrared focal plane arrays based on InAs/GaSb Type-II superlattice

    Science.gov (United States)

    Han, Xi; Jiang, Dongwei; Wang, Guowei; Hao, Hongyue; Sun, Yaoyao; Jiang, Zhi; Lv, Yuexi; Guo, Chunyan; Xu, Yingqiang; Niu, Zhichuan

    2018-03-01

    The paper reports a 640 × 512 long wavelength infrared focal plane arrays (FPAs) with 15 × 15 μm2 pixels pitch based on the type II InAs/GaSb superlattice. Material grown on a 3 in. GaSb substrate exhibits a 50% cutoff wavelength of 10.2 μm across the entire wafer. The peak quantum efficiency of the detector reaches 28% at 9.1 μm without anti-reflecting coating. Maximal resistance-area products of 8.95 Ω·cm2 at 77 K and 24.4 Ω·cm2 at 45 K are achieved in a single element device indicating that the generation-recombination and tunneling mechanisms dominate the device dark current, respectively. The peak Johnson Detectivity reaches 9.66 × 1011 cm Hz1/2/W at 9.1 μm with the bias voltage of 80 mV. In the whole zone, the operability and non-uniformity for the responsivity are 97.74% and 6.41% respectively. The average noise equivalent temperature difference of 31.9 mK at 77 K is achieved with an integration time of 0.5 ms, a 300 K background and f/2 optics.

  10. A Study of Polycrystalline Silicon Damage Features Based on Nanosecond Pulse Laser Irradiation with Different Wavelength Effects.

    Science.gov (United States)

    Xu, Jiangmin; Chen, Chao; Zhang, Tengfei; Han, Zhenchun

    2017-03-03

    Based on PVDF (piezoelectric sensing techniques), this paper attempts to study the propagation law of shock waves in brittle materials during the process of three-wavelength laser irradiation of polysilicon, and discusses the formation mechanism of thermal shock failure. The experimental results show that the vapor pressure effect and the plasma pressure effect in the process of pulsed laser irradiation lead to the splashing of high temperature and high density melt. With the decrease of the laser wavelength, the laser breakdown threshold decreases and the shock wave is weakened. Because of the pressure effect of the laser shock, the brittle fracture zone is at the edge of the irradiated area. The surface tension gradient and surface shear wave caused by the surface wave are the result of coherent coupling between optical and thermodynamics. The average propagation velocity of laser shock wave in polysilicon is 8.47 × 103 m/s, and the experiment has reached the conclusion that the laser shock wave pressure peak exponentially distributes attenuation in the polysilicon.

  11. A Study of Polycrystalline Silicon Damage Features Based on Nanosecond Pulse Laser Irradiation with Different Wavelength Effects

    Directory of Open Access Journals (Sweden)

    Jiangmin Xu

    2017-03-01

    Full Text Available Based on PVDF (piezoelectric sensing techniques, this paper attempts to study the propagation law of shock waves in brittle materials during the process of three-wavelength laser irradiation of polysilicon, and discusses the formation mechanism of thermal shock failure. The experimental results show that the vapor pressure effect and the plasma pressure effect in the process of pulsed laser irradiation lead to the splashing of high temperature and high density melt. With the decrease of the laser wavelength, the laser breakdown threshold decreases and the shock wave is weakened. Because of the pressure effect of the laser shock, the brittle fracture zone is at the edge of the irradiated area. The surface tension gradient and surface shear wave caused by the surface wave are the result of coherent coupling between optical and thermodynamics. The average propagation velocity of laser shock wave in polysilicon is 8.47 × 103 m/s, and the experiment has reached the conclusion that the laser shock wave pressure peak exponentially distributes attenuation in the polysilicon.

  12. Surface stress sensor based on MEMS Fabry-Perot interferometer with high wavelength selectivity for label-free biosensing

    Science.gov (United States)

    Takahashi, Toshiaki; Hizawa, Takeshi; Misawa, Nobuo; Taki, Miki; Sawada, Kazuaki; Takahashi, Kazuhiro

    2018-05-01

    We have developed a surface stress sensor based on a microelectromechanical Fabry-Perot interferometer with high wavelength selectivity by using Au half-mirrors, for highly sensitive label-free biosensing. When the target molecule is adsorbed by the antigen-antibody reaction onto a movable membrane with a thin Au film, which acts as an upper mirror of the optical interferometer, the amount of deflection of the movable membrane deflected by the change in surface stress can be detected with high sensitivity. To improve the signal at the small membrane deflection region of this biosensor resulting in detection of low concentration molecules, by integrating 50 nm-thick Au half-mirrors, the wavelength selectivity of the optical interferometer has been successfully improved 6.6 times. Furthermore, the peak shift in the reflection spectrum due to the adsorption of bovine serum albumin (BSA) antigen with a concentration of 10 ng ml-l by the antigen-antibody reaction was spectroscopically measured on the fabricated optical interferometer, and the deflection amount of the movable membrane after 10 min treatment was 2.4 times larger than that of nonspecific adsorption with the avidin molecules. This result indicated that the proposed sensor can be used for selective detection of low-concentration target antigen molecules.

  13. An absolute calibration method of an ethyl alcohol biosensor based on wavelength-modulated differential photothermal radiometry.

    Science.gov (United States)

    Liu, Yi Jun; Mandelis, Andreas; Guo, Xinxin

    2015-11-01

    In this work, laser-based wavelength-modulated differential photothermal radiometry (WM-DPTR) is applied to develop a non-invasive in-vehicle alcohol biosensor. WM-DPTR features unprecedented ethanol-specificity and sensitivity by suppressing baseline variations through a differential measurement near the peak and baseline of the mid-infrared ethanol absorption spectrum. Biosensor signal calibration curves are obtained from WM-DPTR theory and from measurements in human blood serum and ethanol solutions diffused from skin. The results demonstrate that the WM-DPTR-based calibrated alcohol biosensor can achieve high precision and accuracy for the ethanol concentration range of 0-100 mg/dl. The high-performance alcohol biosensor can be incorporated into ignition interlocks that could be fitted as a universal accessory in vehicles in an effort to reduce incidents of drinking and driving.

  14. Satellite-based evidence of wavelength-dependent aerosol absorption in biomass burning smoke inferred from Ozone Monitoring Instrument

    Directory of Open Access Journals (Sweden)

    H. Jethva

    2011-10-01

    Full Text Available We provide satellite-based evidence of the spectral dependence of absorption in biomass burning aerosols over South America using near-UV measurements made by the Ozone Monitoring Instrument (OMI during 2005–2007. In the current near-UV OMI aerosol algorithm (OMAERUV, it is implicitly assumed that the only absorbing component in carbonaceous aerosols is black carbon whose imaginary component of the refractive index is wavelength independent. With this assumption, OMI-derived aerosol optical depth (AOD is found to be significantly over-estimated compared to that of AERONET at several sites during intense biomass burning events (August-September. Other well-known sources of error affecting the near-UV method of aerosol retrieval do not explain the large observed AOD discrepancies between the satellite and the ground-based observations. A number of studies have revealed strong spectral dependence in carbonaceous aerosol absorption in the near-UV region suggesting the presence of organic carbon in biomass burning generated aerosols. A sensitivity analysis examining the importance of accounting for the presence of wavelength-dependent aerosol absorption in carbonaceous particles in satellite-based remote sensing was carried out in this work. The results convincingly show that the inclusion of spectrally-dependent aerosol absorption in the radiative transfer calculations leads to a more accurate characterization of the atmospheric load of carbonaceous aerosols. The use of a new set of aerosol models assuming wavelength-dependent aerosol absorption in the near-UV region (Absorption Angstrom Exponent λ−2.5 to −3.0 improved the OMAERUV retrieval results by significantly reducing the AOD bias observed when gray aerosols were assumed. In addition, the new retrieval of single-scattering albedo is in better agreement with those of AERONET within the uncertainties (ΔSSA = ±0.03. The new colored carbonaceous aerosol model was also found to

  15. 2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits.

    Science.gov (United States)

    Wang, Ruijun; Sprengel, Stephan; Muneeb, Muhammad; Boehm, Gerhard; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther

    2015-10-05

    The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W"-shaped quantum well, also allowing for laser integration on the same platform.

  16. Efficient wavelength converters with flattop responses based on counterpropagating cascaded SFG and DFG in low-loss QPM LiNbO3 waveguides.

    Science.gov (United States)

    Tehranchi, Amirhossein; Kashyap, Raman

    2009-10-12

    A wavelength converter based on counterpropagating quasi-phase matched cascaded sum and difference frequency generation in lossy lithium niobate waveguide is numerically evaluated and compared to a single-pass scheme assuming a large pump wavelength difference of 75 nm. A double-pass device is proposed to improve the conversion efficiency while the response flattening is accomplished by increasing the wavelength tuning of one pump. The criteria for the design of the low-loss waveguide length, and the assignment of power in the pumps to achieve the desired efficiency, ripple and bandwidth are presented.

  17. Digital acquisition and wavelength control of seed laser for space-based Lidar applications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase I proposes to establish the feasibility of using a space qualifiable Field Programmable Gate Array (FPGA) based digital controller to autonomously...

  18. Integrated cloud infrastructure of the LIT JINR, PE "NULITS" and INP's Astana branch

    Science.gov (United States)

    Mazhitova, Yelena; Balashov, Nikita; Baranov, Aleksandr; Kutovskiy, Nikolay; Semenov, Roman

    2018-04-01

    The article describes the distributed cloud infrastructure deployed on the basis of the resources of the Laboratory of Information Technologies of the Joint Institute for Nuclear Research (LIT JINR) and some JINR Member State organizations. It explains a motivation of that work, an approach it is based on, lists of its participants among which there are private entity "Nazarbayev University Library and IT services" (PE "NULITS") Autonomous Education Organization "Nazarbayev University" (AO NU) and The Institute of Nuclear Physics' (INP's) Astana branch.

  19. Growth of InP directly on Si by corrugated epitaxial lateral overgrowth

    International Nuclear Information System (INIS)

    Metaferia, Wondwosen; Kataria, Himanshu; Sun, Yan-Ting; Lourdudoss, Sebastian

    2015-01-01

    In an attempt to achieve an InP–Si heterointerface, a new and generic method, the corrugated epitaxial lateral overgrowth (CELOG) technique in a hydride vapor phase epitaxy reactor, was studied. An InP seed layer on Si (0 0 1) was patterned into closely spaced etched mesa stripes, revealing the Si surface in between them. The surface with the mesa stripes resembles a corrugated surface. The top and sidewalls of the mesa stripes were then covered by a SiO 2 mask after which the line openings on top of the mesa stripes were patterned. Growth of InP was performed on this corrugated surface. It is shown that growth of InP emerges selectively from the openings and not on the exposed silicon surface, but gradually spreads laterally to create a direct interface with the silicon, hence the name CELOG. We study the growth behavior using growth parameters. The lateral growth is bounded by high index boundary planes of {3 3 1} and {2 1 1}. The atomic arrangement of these planes, crystallographic orientation dependent dopant incorporation and gas phase supersaturation are shown to affect the extent of lateral growth. A lateral to vertical growth rate ratio as large as 3.6 is achieved. X-ray diffraction studies confirm substantial crystalline quality improvement of the CELOG InP compared to the InP seed layer. Transmission electron microscopy studies reveal the formation of a direct InP–Si heterointerface by CELOG without threading dislocations. While CELOG is shown to avoid dislocations that could arise due to the large lattice mismatch (8%) between InP and Si, staking faults could be seen in the layer. These are probably created by the surface roughness of the Si surface or SiO 2 mask which in turn would have been a consequence of the initial process treatments. The direct InP–Si heterointerface can find applications in high efficiency and cost-effective Si based III–V semiconductor multijunction solar cells and optoelectronics integration. (paper)

  20. Single-photon generator for optical telecommunication wavelength

    International Nuclear Information System (INIS)

    Usuki, T; Sakuma, Y; Hirose, S; Takemoto, K; Yokoyama, N; Miyazawa, T; Takatsu, M; Arakawa, Y

    2006-01-01

    We report on the generation of single-photon pulses from a single InAs/InP quantum dot in telecommunication bands (1.3-1.55 μm: higher transmittance through an optical fiber). First we prepared InAs quantum dots on InP (0 0 1) substrates in a low-pressure MOCVD by using a so-called InP 'double-cap' procedure. The quantum dots have well-controlled photo emission wavelength in the telecommunication bands. We also developed a single-photon emitter in which quantum dots were embedded. Numerical simulation designed the emitter to realize efficient injection of the emitted photons into a single-mode optical fiber. Using a Hanbury-Brown and Twiss technique has proved that the photons through the fiber were single photons

  1. Ultra-Broadband Silicon-Wire Polarization Beam Combiner/Splitter Based on a Wavelength Insensitive Coupler With a Point-Symmetrical Configuration

    OpenAIRE

    Uematsu, Takui; Kitayama, Tetsuya; Ishizaka, Yuhei; Saitoh, Kunimasa

    2014-01-01

    An ultrabroadband silicon wire polarization beam combiner/splitter (PBCS) based on a wavelength-insensitive coupler is proposed. The proposed PBCS consists of three identical directional couplers and two identical delay lines. We design the PBCS using the 3-D finite element method. Numerical simulations show that the proposed PBCS can achieve the transmittance of more than 90% over a wide wavelength range from 1450 to 1650 nm for both TE and TM polarized modes.

  2. Dual-wavelength green laser with a 4.5 THz frequency difference based on self-frequency- doubling in Nd3+ -doped aperiodically poled lithium niobate.

    Science.gov (United States)

    Maestre, H; Torregrosa, A J; Fernández-Pousa, C R; Rico, M L; Capmany, J

    2008-05-01

    We report a dual-wavelength continuous-wave laser at 542.4 and 546.8 nm based on an Nd(3+)-doped aperiodically poled lithium niobate crystal. Two fundamental infrared (IR) wavelengths at 1084.8 and 1093.6 nm are simultaneously oscillated and self-frequency-doubled to green. The aperiodic domain distribution patterned in the crystal allows for quasi-phase matched self-frequency-doubling of both IR fundamentals while avoiding their sum-frequency mixing.

  3. Two-mode PLC-based mode multi/demultiplexer for mode and wavelength division multiplexed transmission.

    Science.gov (United States)

    Hanzawa, Nobutomo; Saitoh, Kuimasa; Sakamoto, Taiji; Matsui, Takashi; Tsujikawa, Kyozo; Koshiba, Masanori; Yamamoto, Fumihiko

    2013-11-04

    We proposed a PLC-based mode multi/demultiplexer (MUX/DEMUX) with an asymmetric parallel waveguide for mode division multiplexed (MDM) transmission. The mode MUX/DEMUX including a mode conversion function with an asymmetric parallel waveguide can be realized by matching the effective indices of the LP(01) and LP(11) modes of two waveguides. We report the design of a mode MUX/DEMUX that can support C-band WDM-MDM transmission. The fabricated mode MUX/DEMUX realized a low insertion loss of less than 1.3 dB and high a mode extinction ratio that exceeded 15 dB. We used the fabricated mode MUX/DEMUX to achieve a successful 2 mode x 4 wavelength x 10 Gbps transmission over a 9 km two-mode fiber with a penalty of less than 1 dB.

  4. Threshold-Based Multiple Optical Signal Selection Scheme for Free-Space Optical Wavelength Division Multiplexing Systems

    KAUST Repository

    Nam, Sung Sik

    2017-11-13

    We propose a threshold-based multiple optical signal selection scheme (TMOS) for free-space optical wavelength division multiplexing systems. With this scheme, we can obtain higher spectral efficiency while reducing the possible complexity of implementation caused by the beam-selection scheme and without a considerable performance loss. To characterize the performance of our scheme, we statistically analyze the operation characteristics under conventional detection conditions (i.e., heterodyne detection and intensity modulation/direct detection techniques) with log-normal turbulence while taking into consideration the impact of pointing error. More specifically, we derive exact closed-form expressions for the outage probability, the average bit error rate, and the average spectral efficiency while adopting an adaptive modulation. Some selected results show that TMOS increases the average spectral efficiency while maintaining a minimum average bit error rate requirement.

  5. Progress in InP solar cell research

    International Nuclear Information System (INIS)

    Weinberg, I.; Brinker, D.J.

    1988-01-01

    Progress, in the past year, in InP solar cell research is reviewed. Small area cells with AMO, total area efficiencies of 18.8 percent were produced by OMCVD and Ion Implantation. Larger area cells (2 and 4 sq cm) were processed on a production basis. One thousand of the 2 sq cm cells will be used to supply power to a small piggyback lunar orbiter scheduled for launch in February 1990. Laboratory tests of ITO/InP cells, under 10 MeV proton irradiation, indicate radiation resistance comparable to InP n/p homojunction cells. Computer modeling studies indicate that, for identical geometries and dopant concentrations, InP solar cells are significantly more radiation resistant than GaAs under 1 MeV electron irradiation. Additional computer modeling calculations were used to produce rectangular and circular InP concentrator cell designs for both the low concentration SLATS and higher concentration Cassegrainian Concentrators

  6. InP nanopore arrays for photoelectrochemical hydrogen generation.

    Science.gov (United States)

    Li, Qiang; Zheng, Maojun; Zhang, Bin; Zhu, Changqing; Wang, Faze; Song, Jingnan; Zhong, Miao; Ma, Li; Shen, Wenzhong

    2016-02-19

    We report a facile and large-scale fabrication of highly ordered one-dimensional (1D) indium phosphide (InP) nanopore arrays (NPs) and their application as photoelectrodes for photoelectrochemical (PEC) hydrogen production. These InP NPs exhibit superior PEC performance due to their excellent light-trapping characteristics, high-quality 1D conducting channels and large surface areas. The photocurrent density of optimized InP NPs is 8.9 times higher than that of planar counterpart at an applied potential of +0.3 V versus RHE under AM 1.5G illumination (100 mW cm(-2)). In addition, the onset potential of InP NPs exhibits 105 mV of cathodic shift relative to planar control. The superior performance of the nanoporous samples is further explained by Mott-Schottky and electrochemical impedance spectroscopy ananlysis.

  7. Formation of quantum wires and dots on InP(001) by As/P exchange

    International Nuclear Information System (INIS)

    Yang, Haeyeon; Ballet, P.; Salamo, G. J.

    2001-01-01

    We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. Results demonstrate that the exchange process can be controlled to selectively produce either quantum wires or quantum dots. 15 nm wide self-assembled nanowires are observed, and they are elongated along the dimer row direction of the InP(001)-2x4 surface with a length of over 1 μm and flat top 2x4 surfaces. In addition, when the nanowires are annealed with no arsenic overpressure, the surface reconstruction transforms from 2x4 to 4x2 and the nanowires transform into dots with a rectangular base and flat top. [copyright] 2001 American Institute of Physics

  8. A wavelength-dependent visible and infrared spectrophotometric function for the Moon based on ROLO data

    Science.gov (United States)

    Buratti, B.J.; Hicks, M.D.; Nettles, J.; Staid, M.; Pieters, C.M.; Sunshine, J.; Boardman, J.; Stone, T.C.

    2011-01-01

    The USGS's Robotic Lunar Observatory (ROLO) dedicated ground-based lunar calibration project obtained photometric observations of the Moon over the spectral range attainable from Earth (0.347-2.39 ??m) and over solar phase angles of 1.55??-97??. From these observations, we derived empirical lunar surface solar phase functions for both the highlands and maria that can be used for a wide range of applications. The functions can be used to correct for the effects of viewing geometry to produce lunar mosaics, spectra, and quick-look products for future lunar missions and ground-based observations. Our methodology can be used for a wide range of objects for which multiply scattered radiation is not significant, including all but the very brightest asteroids and moons. Copyright 2011 by the American Geophysical Union.

  9. Study of ocean red tide multi-parameter monitoring technology based on double-wavelength airborne lidar system

    Science.gov (United States)

    Lin, Hong; Wang, Xinming; Liang, Kun

    2010-10-01

    For monitoring and forecasting of the ocean red tide in real time, a marine environment monitoring technology based on the double-wavelength airborne lidar system is proposed. An airborne lidar is father more efficient than the traditional measure technology by the boat. At the same time, this technology can detect multi-parameter about the ocean red tide by using the double-wavelength lidar.It not only can use the infrared laser to detect the scattering signal under the water and gain the information about the red tise's density and size, but also can use the blue-green laser to detect the Brillouin scattering signal and deduce the temperature and salinity of the seawater.The red tide's density detecting model is firstly established by introducing the concept about the red tide scattering coefficient based on the Mie scattering theory. From the Brillouin scattering theory, the relationship about the blue-green laser's Brillouin scattering frequency shift value and power value with the seawater temperature and salinity is found. Then, the detecting mode1 of the saewater temperature and salinity can be established. The value of the red tide infrared scattering signal is evaluated by the simulation, and therefore the red tide particles' density can be known. At the same time, the blue-green laser's Brillouin scattering frequency shift value and power value are evaluated by simulating, and the temperature and salinity of the seawater can be known. Baed on the multi-parameters, the ocean red tide's growth can be monitored and forecasted.

  10. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

    Science.gov (United States)

    Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

    2009-01-01

    Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

  11. Development of at-wavelength metrology using grating-based shearing interferometry at Diamond Light Source

    International Nuclear Information System (INIS)

    Wang, Hongchang; Berujon, Sebastien; Sawhney, Kawal

    2013-01-01

    The grating-based shearing interferometer has been established and further developed on B16 at Diamond Light Source. The beamline performances of both an X-ray plane mirror and a compound refractive lens (CRL) have been investigated using this technique. The slope error of the X-ray mirror was retrieved from the wavefront phase gradient, which was measured using two different processing schemes: phase stepping and moiré fringe analysis. The interferometer has demonstrated a high sensitivity with sub-microradian accuracy. Some of the advantages, disadvantages and limitations for the two approaches will also be presented.

  12. Development of at-wavelength metrology using grating-based shearing interferometry at Diamond Light Source

    Science.gov (United States)

    Wang, Hongchang; Berujon, Sebastien; Sawhney, Kawal

    2013-03-01

    The grating-based shearing interferometer has been established and further developed on B16 at Diamond Light Source. The beamline performances of both an X-ray plane mirror and a compound refractive lens (CRL) have been investigated using this technique. The slope error of the X-ray mirror was retrieved from the wavefront phase gradient, which was measured using two different processing schemes: phase stepping and moiré fringe analysis. The interferometer has demonstrated a high sensitivity with sub-microradian accuracy. Some of the advantages, disadvantages and limitations for the two approaches will also be presented.

  13. Low cost, microcontroller based heating device for multi-wavelength differential scanning fluorimetry.

    Science.gov (United States)

    Hoeser, Jo; Gnandt, Emmanuel; Friedrich, Thorsten

    2018-01-23

    Differential scanning fluorimetry is a popular method to estimate the stability of a protein in distinct buffer conditions by determining its 'melting point'. The method requires a temperature controlled fluorescence spectrometer or a RT-PCR machine. Here, we introduce a low-budget version of a microcontroller based heating device implemented into a 96-well plate reader that is connected to a standard fluorescence spectrometer. We demonstrate its potential to determine the 'melting point' of soluble and membranous proteins at various buffer conditions.

  14. Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

    Science.gov (United States)

    Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

    2016-08-24

    The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

  15. Effects of the electron beam on InP(100)

    International Nuclear Information System (INIS)

    Bouslama, M.; Jardin, C.; Ghamnia, M.

    1996-01-01

    Auger Electron Spectroscopy (AES) is performed to monitor the InP(100) surface evolution while it is irradiated by an electron beam of 5 KeV energy and 10 -3 A.cm -2 current density. A charge phenomenon appears during the irradiation of sputter-cleaned InP(100) by Ar + at low energy (500 eV). The deposition of phosphorus or antimony at room temperature on cleaned InP(100) is a good way of preventing this charging problem. This is also achieved by the growth of stoichiometric indium phosphide on InP(100) substrate, from an injection of phosphine and indium trimethyl whose ratio V/III is of 50, in a MOCVD (Metal Organic Chemical Vapor Deposition) reactor. The electron beam even acts to stimulate oxidation of the stoichiometric InP(100) surface involving on the top layers, into a well defined oxide such as InPO 4 or a contamination layer composed of carbon and oxygen. The partial pressure in the spectrometer is about 10 -9 Torr. The incident electrons produce breaking of (In-P) chemical bonds so that the resulting indium takes part in the oxidation process. The phosphorus is thought to be desorbed from the surface. (author)

  16. Study and use of an infrared camera optimized for ground based observations in the 10 micron wavelength range

    International Nuclear Information System (INIS)

    Remy, Sophie

    1991-01-01

    Astronomical observations in the 10 micron atmospheric window provide very important information for many of astrophysical topics. But because of the very large terrestrial photon background at that wavelength, ground based observations have been impeded. On the other band, the ground based telescopes offer a greater angular resolution than the spatially based telescopes. The recent development of detector arrays for the mid infrared range made easier the development of infrared cameras with optimized detectors for astronomical observations from the ground. The CAMIRAS infrared camera, built by the 'Service d'Astrophysique' in Saclay is the instrument we have studied and we present its performances. Its sensitivity, given for an integration time of one minute on source and a signal to noise ratio of 3, is 0.15 Jy for punctual sources, and 20 mJy arcs"-"2 for extended sources. But we need to get rid of the enormous photon background so we have to find a better way of observation based on modulation techniques as 'chopping' or 'nodding'. Thus we show that a modulation about 1 Hz is satisfactory with our detectors arrays without perturbing the signal to noise ratio. As we have a good instrument and because we are able to get rid of the photon background, we can study astronomical objects. Results from a comet, dusty stellar disks, and an ultra-luminous galaxy are presented. (author) [fr

  17. Oral cancer detection based on fluorescence polarization of blood plasma at excitation wavelength 405 nm

    Science.gov (United States)

    Pachaiappan, Rekha; Prakasarao, Aruna; Manoharan, Yuvaraj; Dornadula, Koteeswaran; Singaravelu, Ganesan

    2017-02-01

    During metabolism the metabolites such as hormones, proteins and enzymes were released in to the blood stream by the cells. These metabolites reflect any change that occurs due to any disturbances in normal metabolic function of the human system. This was well observed with the altered spectral signatures observed with fluorescence spectroscopic technique. Previously many have reported on the significance of native fluorescence spectroscopic method in the diagnosis of cancer. As fluorescence spectroscopy is sensitive and simple, it has complementary techniques such as excitation-emission matrix, synchronous and polarization. The fluorescence polarization measurement provides details about any association or binding reactions and denaturing effects that occurs due to change in the micro environment of cells and tissues. In this study, we have made an attempt in the diagnosis of oral cancer at 405 nm excitation using fluorescence polarization measurement. The fluorescence anisotropic values calculated from polarized fluorescence spectral data of normal and oral cancer subjects yielded a good accuracy when analyzed with linear discriminant analysis based artificial neural network. The results will be discussed in detail.

  18. Photonics-based microwave frequency measurement using a double-sideband suppressed-carrier modulation and an InP integrated ring-assisted Mach-Zehnder interferometer filter.

    Science.gov (United States)

    Fandiño, Javier S; Muñoz, Pascual

    2013-11-01

    A photonic system capable of estimating the unknown frequency of a CW microwave tone is presented. The core of the system is a complementary optical filter monolithically integrated in InP, consisting of a ring-assisted Mach-Zehnder interferometer with a second-order elliptic response. By simultaneously measuring the different optical powers produced by a double-sideband suppressed-carrier modulation at the outputs of the photonic integrated circuit, an amplitude comparison function that depends on the input tone frequency is obtained. Using this technique, a frequency measurement range of 10 GHz (5-15 GHz) with a root mean square value of frequency error lower than 200 MHz is experimentally demonstrated. Moreover, simulations showing the impact of a residual optical carrier on system performance are also provided.

  19. Wavelength conversion, time demultiplexing and multicasting based on cross-phase modulation and four-wave mixing in dispersion-flattened highly nonlinear photonic crystal fiber

    International Nuclear Information System (INIS)

    Hui, Zhan-Qiang; Zhang, Jian-Guo

    2012-01-01

    We propose the use of cross-phase modulation (XPM) and four-wave mixing (FWM) in dispersion-flattened highly nonlinear photonic crystal fibers (HNL-PCFs) to implement the functionalities of wavelength conversion, simultaneous time demultiplexing and wavelength multicasting in optical time-division multiplexing (OTDM) systems. The experiments on wavelength conversion at 80 Gbit s −1 and OTDM demultiplexing from 80 to 10 Gbit s −1 with wavelength multicasting of two channels are successfully demonstrated to validate the proposed scheme, which are carried out by using two segments of dispersion-flattened HNL-PCFs with lengths of 100 and 50 m, respectively. Moreover, the bit error rate (BER) performance is also measured. The results show that our designed system can achieve a power penalty of less than 4.6 dB for two multicasting channels with a 24 nm wavelength span at the BER of 10 −9 when compared with the 10 Gbit/s back-to-back measurement. The proposed system is transparent to bit rate since only an ultrafast third-order nonlinear effect is used. The resulting configuration is compact, robust and reliable, benefiting from the use of dispersion-flattened HNL-PCFs with short lengths. This also makes the proposed system more flexible in the operational wavelengths than those based on dispersion-shifted fibers and traditional highly nonlinear fibers. (paper)

  20. GaAs FETs and novel heteroepitaxial quaternary lasers grown on InP substrates by organometallic chemical vapor deposition

    International Nuclear Information System (INIS)

    Lo, Y.H.; Bhat, R.; Chang-Hasnain, C.; Caneau, C.; Zah, C.E.; Lee, T.P.

    1988-01-01

    This paper reports the GaAs MESFETs and 1.3μm buried hetero-structure lasers with AlGaAs/GaAs lateral confinement layers simultaneously grown by OMCVD and fabricated on InP structures. The 1μm recessed gate MESFET has a transconductance of 220 mS/mm and the novel structured laser has a CW threshold current of 45 mA. The heteroepitaxy technology and devices show great promises for long wavelength opto-electronic integrated circuits

  1. Retroreflection from nanoporous InP

    International Nuclear Information System (INIS)

    Prislopski, S.Ya.; Naumenko, E.K.; Gaponenko, S.V.; Tiginyanu, I.M.; Ghimpu, L.; Sirbu, L.; Monaico, E.

    2013-01-01

    Pronounced retroreflection behavior is reported for a fishnet nanoporous strongly absorbing semiconductor material. Retroreflection appears with diffusive specular reflection for all angles of incidence. Retroreflection is apparent by the naked eye with day light illumination and exhibits no selectivity with respect to wavelength and polarization of incident light featuring minor depolarization of retroreflected light. The phenomenon can be classified neither as coherent backscattering nor as Anderson localization of light. The primary model includes light scattering from strongly absorptive and refractive super-wavelength clusters existing within the porous fishnet structure. We found that retroreflection vanishes for wavelength where absorption becomes negligible. (authors)

  2. Heterostructures (CaSrBa)F2 on InP for Optoelectronics

    National Research Council Canada - National Science Library

    Pyshkin, Sergei

    1995-01-01

    Temperature-reduced MBE growth of group II-a fluorides onto InP( 100) surface as well as optimal cleaning and passivation procedures for InP wafers have been newly developed taking into account exsisting literature data...

  3. An amplified coarse wavelength division multiplexing self-referencing sensor network based on phase-shifted FBGs in transmissive configuration

    International Nuclear Information System (INIS)

    Elosua, C; Perez-Herrera, R A; Lopez-Amo, M; Bariain, C; Garcia-Olcina, R; Sales, S; Capmany, J

    2009-01-01

    A new amplified CWDM (coarse wavelength division multiplexing) self-referencing sensor network using phase-shifted fibre Bragg gratings (PS-FBGs) is experimentally demonstrated in this work. The network uses the PS-FBGs to address intensity sensors in a transmissive configuration, obtaining simultaneously in reflection a wavelength encoded reference signal. In order to enable the remote operation of the sensors, we have introduced optical amplification at the interrogation header of the network, using highly doped erbium fibre

  4. Interfacial reactions between thin films of zinc and (100) InP

    International Nuclear Information System (INIS)

    Kaminska, E.; Piotrowska, A.; Barcz, A.; Mizera, E.; Dynowska, E.

    1995-01-01

    The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition and to form an ohmic contact when deposited on highly doped n-type InP. Heat treatment causes the formation of Zn 3 P 2 phase lattice matched to InP. (author)

  5. Long-Term INP Measurements within the BACCHUS project

    Science.gov (United States)

    Schrod, Jann; Bingemer, Heinz; Curtius, Joachim

    2016-04-01

    The European research project BACCHUS (Impact of Biogenic versus Anthropogenic emissions on Clouds and Climate: towards a Holistic UnderStanding) studies the interactions between aerosols, clouds and the climate system, and tries to reconstruct pre-industrial aerosol and cloud conditions from data collected in pristine environments. The number concentration of Ice Nucleating Particles (INP) is an important, yet scarcely known parameter. As a partner of Work package 1 of BACCHUS we began in September 2014 to operate a globally spanned network of four INP sampling stations, which is the first of its kind. The stations are located at the ATTO observatory in the Brazilian Rainforest, the Caribbean Sea (Martinique), the Zeppelin Observatory at Svalbard in the Arctic, and in central Europe (Germany). Samples are collected routinely every day or every few days by electrostatic precipitation of aerosol particles onto Si substrates. The samples are stored in petri-slides, and shipped to our laboratory in Frankfurt, Germany. The number of ice nucleating particles on the substrate is analyzed in the isothermal static diffusion chamber FRIDGE by growing ice on the INP and photographing and counting the crystals. The measurements in the temperature range from -20°C to -30°C and relative humidities of 100-135% (with respect to ice) address primarily the deposition/condensation nucleation modes. Here we present INP and supporting aerosol data from this novel INP network for the first time.

  6. Effects of impurities on radiation damage in InP

    International Nuclear Information System (INIS)

    Yamaguchi, M.; Ando, K.

    1986-01-01

    Strong impurity effects upon introduction and annealing behavior of radiation-induced defects in InP irradiated with 1-MeV electrons have been found. The main defect center of 0.37-eV hole trap H4 in p-InP, which must be due to a point defect, is annealed even at room temperature. Its annealing rate is found to be proportional to the 2/3 power of the preirradiation carrier concentration in InP. Moreover, the density of the hole trap H5 (E/sub v/+0.52 eV) in p-InP, which must be due to a point defect--impurity complex, increases with increase in the InP carrier concentration. These results suggest that the radiation-induced defects in InP must recover through long-range diffusion mediated by impurity atoms. A model is proposed in which point defects diffuse to sinks through impurities so as to disappear or bind impurities so as to form point defect--impurity complexes. In addition to the long-range diffusion mechanism, the possibility of charge-state effects responsible for the thermal annealing of radiation-induced defects in InP is also discussed

  7. Susceptor and proximity rapid thermal annealing of InP

    International Nuclear Information System (INIS)

    Katz, A.; Pearton, S.J.; Geva, M.

    1990-01-01

    This paper presents a comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology. The superiority of annealing within a susceptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750 degrees C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration

  8. Summary of Workshop on InP: Status and Prospects

    Science.gov (United States)

    Walters, R. J.; Weinberg, I.

    1994-01-01

    The primary objective of most of the programs in InP solar cells is the development of the most radiation hard solar cell technology. In the workshop, it was generally agreed that the goal is a cell which displays high radiation tolerance in a radiation environment equivalent to a 1 MeV electron fluence of about 10(exp 16)/sq cm. Furthermore, it is desired that the radiation response of the cell be essentially flat out to this fluence - i.e. that the power output of the cell not decrease from its beginning of life (BOL) value in this radiation environment. It was also agreed in the workshop that the manufacturability of InP solar cells needs to be improved. In particular, since InP wafers are relatively dense and brittle, alternative substrates need to be developed. Research on hetero-epitaxial InP cells grown on Si, Ge, and GaAs substrates is currently underway. The ultimate goal is to develop hetero-epitaxial InP solar cells using a cheap, strong, and lightweight substrate.

  9. InP tunnel junction for InGaAs/InP tandem solar cells

    Science.gov (United States)

    Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

    1995-01-01

    Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

  10. Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

    Science.gov (United States)

    Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

    1995-01-01

    High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

  11. A study of 1/f noise in InP grown by CBE

    NARCIS (Netherlands)

    Chen, X.Y.; Leijs, M.R.

    1996-01-01

    The origin of low-frequency noise in InP was studied experimentally by measuring the noise of InP layers grown by chemical beam epitaxy (CBE). Such InP layers are unintentionally doped, but of varying purity and always of n-type conductivity. We performed noise measurements at temperatures from 77

  12. Switchable multi-wavelength erbium-doped fiber ring laser based on a tapered in-line Mach–Zehnder interferometer

    Science.gov (United States)

    Zhou, Yuxin; Wang, Xin; Tang, Zijuan; Lou, Shuqin

    2018-05-01

    In this paper, a switchable multi-wavelength erbium-doped fiber ring laser based on a tapered in-line Mach–Zehnder interferometer is proposed. The in-line Mach–Zehnder interferometer is fabricated by splicing a large-core fiber between two segments of single mode fibers, in which the first splicing point is tapered and the second splicing point is connected directly. By carefully rotating the polarization controller, switchable single-, dual-, triple- and quad-wavelength lasing outputs can be obtained with a side mode suppression ratio higher than 50 dB. The maximal peak power difference of multi-wavelength lasing is 3.67 dB, demonstrating a good power equalization performance. Furthermore, the proposed laser is proven to be very stable at room temperature. The wavelength shifts and peak power fluctuations are less than 0.02 nm and 1.3 dB over half an hour. In addition, stable quintuple-wavelength lasing with a side mode suppression ratio higher than 50 dB can also be realized when the filter length is changed.

  13. Compact 35μm fiber coupled diode laser module based on dense wavelength division multiplexing of NBA mini-bars

    Science.gov (United States)

    Witte, U.; Traub, M.; Di Meo, A.; Hamann, M.; Rubel, D.; Hengesbach, S.; Hoffmann, D.

    2016-03-01

    We present a compact, modular and cross talk free approach for dense wavelength division multiplexing of high power diode lasers based on ultra-steep dielectric filters. The mini bars consist of 5 narrow stripe broad area emitters with a beam parameter product in the range of 2 mm mrad and a wavelength spacing of 2.5 nm between 2 adjacent emitters. Experimental results for fiber coupling (35 μm core diameter, NA < 0.2) of internally and externally stabilized diode lasers are presented. Optical losses are analyzed and alternative optical designs to overcome the current limitations of the setup are discussed.

  14. A New Wavelength Optimization and Energy-Saving Scheme Based on Network Coding in Software-Defined WDM-PON Networks

    Science.gov (United States)

    Ren, Danping; Wu, Shanshan; Zhang, Lijing

    2016-09-01

    In view of the characteristics of the global control and flexible monitor of software-defined networks (SDN), we proposes a new optical access network architecture dedicated to Wavelength Division Multiplexing-Passive Optical Network (WDM-PON) systems based on SDN. The network coding (NC) technology is also applied into this architecture to enhance the utilization of wavelength resource and reduce the costs of light source. Simulation results show that this scheme can optimize the throughput of the WDM-PON network, greatly reduce the system time delay and energy consumption.

  15. Towards a versatile active wavelength converter for all-optical networks based on quasi-phase matched intra-cavity difference-frequency generation.

    Science.gov (United States)

    Torregrosa, Adrián J; Maestre, Haroldo; Capmany, Juan

    2013-11-18

    The availability of reconfigurable all-optical wavelength converters for an efficient and flexible use of optical resources in WDM (wavelength division multiplexing) networks is still lacking at present. We propose and report preliminary results on a versatile active technique for multiple and tunable wavelength conversions in the 1500-1700 nm spectral region. The technique is based on combining broadband quasi-phase matched intra-cavity parametric single-pass difference-frequency generation close to degeneracy in a diode-pumped tunable laser. A periodically poled stoichiometric lithium tantalate crystal is used as the nonlinear medium, with a parametric pump wave generated in a continuous-wave self-injection locked Cr3+:LiCAF tunable laser operating at around 800 nm.

  16. Graphene enhanced field emission from InP nanocrystals.

    Science.gov (United States)

    Iemmo, L; Di Bartolomeo, A; Giubileo, F; Luongo, G; Passacantando, M; Niu, G; Hatami, F; Skibitzki, O; Schroeder, T

    2017-12-08

    We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the FE by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.

  17. Radiation effects in heteroepitaxial InP solar cells

    Science.gov (United States)

    Weinberg, I.; Curtis, H. B.; Swartz, C. K.; Brinker, D. J.; Vargas-Aburto, C.

    1993-01-01

    Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.

  18. All-optical OFDM system using a wavelength selective switch based transmitter and a spectral magnification based receiver

    DEFF Research Database (Denmark)

    Guan, Pengyu; Lefrancois, S.; Lillieholm, Mads

    2014-01-01

    We demonstrate an AO-OFDM system with a WSS-based transmitter and time-lens based receiver for spectral magnification, achieving BER~10-9 for a 28×10 Gbit/s DPSK AO-OFDM signal. Furthermore, the receiver performance for DPSK and DQPSK is investigated using Monte Carlo simulations....

  19. Wavelength dependence of the single pulse femtosecond laser ablation threshold of indium phosphide in the 400-2050 nm range

    International Nuclear Information System (INIS)

    Borowiec, A.; Tiedje, H.F.; Haugen, H.K.

    2005-01-01

    We present single pulse femtosecond laser ablation threshold measurements of InP obtained by optical, scanning electron, and atomic force microscopy. The experiments were conducted with laser pulses 65-175 fs in duration, in the wavelength range from 400 to 2050 nm, covering the photon energy region above and below the bandgap of InP. The ablation thresholds determined from depth and volume measurements varied from 87 mJ/cm 2 at 400 nm to 250 mJ/cm 2 at 2050 nm. In addition, crater depths and volumes were measured over a range of laser fluences extending well above the ablation threshold

  20. A Fiber Bragg Grating Sensor Interrogation System Based on a Linearly Wavelength-Swept Thermo-Optic Laser Chip

    Science.gov (United States)

    Lee, Hyung-Seok; Lee, Hwi Don; Kim, Hyo Jin; Cho, Jae Du; Jeong, Myung Yung; Kim, Chang-Seok

    2014-01-01

    A linearized wavelength-swept thermo-optic laser chip was applied to demonstrate a fiber Bragg grating (FBG) sensor interrogation system. A broad tuning range of 11.8 nm was periodically obtained from the laser chip for a sweep rate of 16 Hz. To measure the linear time response of the reflection signal from the FBG sensor, a programmed driving signal was directly applied to the wavelength-swept laser chip. The linear wavelength response of the applied strain was clearly extracted with an R-squared value of 0.99994. To test the feasibility of the system for dynamic measurements, the dynamic strain was successfully interrogated with a repetition rate of 0.2 Hz by using this FBG sensor interrogation system. PMID:25177803

  1. Dual-wavelength phase-shifting digital holography selectively extracting wavelength information from wavelength-multiplexed holograms.

    Science.gov (United States)

    Tahara, Tatsuki; Mori, Ryota; Kikunaga, Shuhei; Arai, Yasuhiko; Takaki, Yasuhiro

    2015-06-15

    Dual-wavelength phase-shifting digital holography that selectively extracts wavelength information from five wavelength-multiplexed holograms is presented. Specific phase shifts for respective wavelengths are introduced to remove the crosstalk components and extract only the object wave at the desired wavelength from the holograms. Object waves in multiple wavelengths are selectively extracted by utilizing 2π ambiguity and the subtraction procedures based on phase-shifting interferometry. Numerical results show the validity of the proposed technique. The proposed technique is also experimentally demonstrated.

  2. Analysis of physical layer performance of data center with optical wavelength switches based on advanced modulation formats

    Science.gov (United States)

    Ahmad, Iftikhar; Chughtai, Mohsan Niaz

    2018-05-01

    In this paper the IRIS (Integrated Router Interconnected spectrally), an optical domain architecture for datacenter network is analyzed. The IRIS integrated with advanced modulation formats (M-QAM) and coherent optical receiver is analyzed. The channel impairments are compensated using the DSP algorithms following the coherent receiver. The proposed scheme allows N2 multiplexed wavelengths for N×N size. The performance of the N×N-IRIS switch with and without wavelength conversion is analyzed for different Baud rates over M-QAM modulation formats. The performance of the system is analyzed in terms of bit error rate (BER) vs OSNR curves.

  3. Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

    Science.gov (United States)

    Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

    2018-04-01

    To analyze the open-circuit voltage (V oc) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0, and the temperature coefficient C of the solar cells. Our results show that, while the C of InP QD solar cells is slightly larger than that of the reference InGaP solar cells, V 0 significantly decreases and coincides with the bandgap energy of the InP QDs rather than that of the InGaP host. This V 0 indicates that the V oc reduction in the InP QD solar cells is primarily caused by the breaking of the Fermi energy separation between the QDs and the host semiconductor in intermediate-band solar cells, rather than by enhanced carrier recombination.

  4. Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition.

    Science.gov (United States)

    Park, Jeung Hun; Pozuelo, Marta; Setiawan, Bunga P D; Chung, Choong-Heui

    2016-12-01

    We report the growth of vertical -oriented InAs x P1-x (0.11 ≤ x ≤ 0.27) nanowires via metal-organic chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates at 375 °C. Trimethylindium, tertiarybutylphosphine, and tertiarybutylarsine are used as the precursors, corresponding to P/In and As/In molar ratios of 29 and 0.01, respectively. The as-grown nanowire growth morphologies, crystallinity, composition, and optical characteristics are determined using a combination of scanning and transmission electron microscopies, electron diffraction, and X-ray photoelectron, energy dispersive X-ray, and Raman spectroscopies. We find that the InAs x P1-x nanowires are tapered with narrow tops, wider bases, and In-rich In-As alloy tips, characteristic of vapor-liquid-solid process. The wires exhibit a mixture of zinc blende and wurtzite crystal structures and a high density of structural defects such as stacking faults and twins. Our results suggest that the incorporation of As into InP wires decreases with increasing substrate temperature. The Raman spectra obtained from the In(As)P nanowires reveal a red-shift and lower intensity of longitudinal optical mode relative to both InP nanowires and InP(111)B bulk, due to the incorporation of As into the InP matrix.

  5. Synthesis of colloidal InP nanocrystal quantum dots

    International Nuclear Information System (INIS)

    Sirbu, L.; Gutul, T.; Todosiciuc, A.; Danila, M.; Muller, R.; Sarua, A.; Webster, R.; Tiginyanu, I.M.; Ursaki, V.

    2013-01-01

    InP nano dots with the diameter of 4-10 nm were synthesized using sol-gel method. The nano dot dimensions were obtained using TEM, and we found the d(111) spacing to be 0.328 nm which agrees within 3% of the literature value. Prepared nanoparticles where characterized then by Raman spectroscopy and Xray diffraction. Performed measurements confirm good crystalline quality of obtained InP particles, which can be used as a basis for THz emitters, LED, and OLED displays. (authors)

  6. Palladium nanoparticles on InP for hydrogen detection

    Directory of Open Access Journals (Sweden)

    Zdansky Karel

    2011-01-01

    Full Text Available Abstract Layers of palladium (Pd nanoparticles on indium phosphide (InP were prepared by electrophoretic deposition from the colloid solution of Pd nanoparticles. Layers prepared by an opposite polarity of deposition showed different physical and morphological properties. Particles in solution are separated and, after deposition onto the InP surface, they form small aggregates. The size of the aggregates is dependent on the time of deposition. If the aggregates are small, the layer has no lateral conductance. Forward and reverse I-V characteristics showed a high rectification ratio with a high Schottky barrier height. The response of the structure on the presence of hydrogen was monitored.

  7. Optical phonon modes of wurtzite InP

    Science.gov (United States)

    Gadret, E. G.; de Lima, M. M.; Madureira, J. R.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.; Cantarero, A.

    2013-03-01

    Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis by the vapor-liquid-solid method. The A1(TO), E2h, and E1(TO) phonon modes of the wurtzite symmetry were identified by using light linearly polarized along different directions in backscattering configuration. Additionally, forbidden longitudinal optical modes have also been observed. Furthermore, by applying an extended 11-parameter rigid-ion model, the complete dispersion relations of InP in the wurtzite phase have been calculated, showing a good agreement with the Raman experimental data.

  8. Comparative modeling of InP solar cell structures

    Science.gov (United States)

    Jain, R. K.; Weinberg, I.; Flood, D. J.

    1991-01-01

    The comparative modeling of p(+)n and n(+)p indium phosphide solar cell structures is studied using a numerical program PC-1D. The optimal design study has predicted that the p(+)n structure offers improved cell efficiencies as compared to n(+)p structure, due to higher open-circuit voltage. The various cell material and process parameters to achieve the maximum cell efficiencies are reported. The effect of some of the cell parameters on InP cell I-V characteristics was studied. The available radiation resistance data on n(+)p and p(+)p InP solar cells are also critically discussed.

  9. Carrier concentration effects on radiation damage in InP

    International Nuclear Information System (INIS)

    Yamaguchi, M.; Ando, K.; Uemura, C.

    1984-01-01

    Minority carrier diffusion length and carrier concentration studies have been made on room-temperature 1-MeV electron irradiated liquid-encapsulated Czochralski grown Zn-doped p-InP. The damage rate for the diffusion length and carrier removal rate due to irradiation have been found to strongly decrease with an increase in the carrier concentration in InP. These phenomena suggest that the induced defects interact with impurities in InP. A preliminary study on the annealing behavior has also been performed

  10. Workshop on Heteroepitaxial InP Solar Cells

    Science.gov (United States)

    Weinberg, I.; Walters, R. W.

    1993-01-01

    In a generic sense, the justification for any sort of InP solar cell research applies, i.e. to take advantage of the inherently high radiation resistance and efficiency of InP solar cells. To be more specific, the approach is justified by its potential for significant cost reduction and the availability of greatly increased cell area afforded by substrates such as Si and Ge. The use of substrates, such as the latter two, would result in increased ruggedness, ease of handling, and improved manufacturability. The use of more rugged substrates would lead to a greatly increased capability for cell thinning leading to the desirable feature of reduced array weight.

  11. Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

    Energy Technology Data Exchange (ETDEWEB)

    Lamy, J.M.; Levallois, C.; Nakhar, A.; Caroff, P.; Paranthoen, C.; Piron, R.; Le Corre, A.; Loualiche, S. [UMR C6082 FOTON - INSA de Rennes, 20 Avenue des Buttes de Coesmes, 35043 Rennes (France); Ramdane, A. [Laboratoire de Photonique et Nanostructures, CNRS UPR20, Route de Nozay, 91460 Marcoussis (France)

    2007-06-15

    We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is measured. The optically pumped VCSEL is fabricated by metallic bonding, which allows the deposition of two dielectrics Bragg mirrors. The VCSEL with an active region based on InGaAs/InGaAsP quantum wells exhibits a lasing emission at 1.578 {mu}m at room temperature under continuous wave operation. The VCSEL with an active region based on quantum wires shows a luminescence at 1.53 {mu}m strongly polarized along the direction [1 anti 10] which is promising for the stabilization of in plane polarization of VCSEL emission. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

    International Nuclear Information System (INIS)

    Lamy, J.M.; Levallois, C.; Nakhar, A.; Caroff, P.; Paranthoen, C.; Piron, R.; Le Corre, A.; Loualiche, S.; Ramdane, A.

    2007-01-01

    We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is measured. The optically pumped VCSEL is fabricated by metallic bonding, which allows the deposition of two dielectrics Bragg mirrors. The VCSEL with an active region based on InGaAs/InGaAsP quantum wells exhibits a lasing emission at 1.578 μm at room temperature under continuous wave operation. The VCSEL with an active region based on quantum wires shows a luminescence at 1.53 μm strongly polarized along the direction [1 anti 10] which is promising for the stabilization of in plane polarization of VCSEL emission. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. [Application of wavelength selection algorithm to measure the effective component of Chinese medicine based on near-infrared spectroscopy].

    Science.gov (United States)

    Gu, Xiao-Yu; Xu, Ke-Xin; Wang, Yan

    2006-09-01

    Near infrared (NIR) spectroscopy has raised a lot of interest in the pharmaceutical industry because it is a rapid and cost-effective analytical type of spectroscopy with no need for extensive sample preparation, and with the easy-realizable ability of on-line application. The NIR technology can increase the quality control standard of the Chinese medicine and accelerate the entry into the international market. In the present paper, two methods for wavelength selection are applied to the measurement of borneol, one of which is the multiple-chain stepwise, which tends to select many variables in the same area containing valuable information, and the other is the mixture genetic algorithm, which incorporates simulated annealing so as to improve the local searching ability while maintaining the global searching ability. The results present that the number of wavelength is reduced to 16% compared with the original number of wavelength, and the prediction accuracy has increased 47.6%. Therefore, the method of wavelength selection is a good way to enhance the prediction accuracy and simplify the model in NIR region.

  14. Rapid and sensitive trace gas detection with continuous wave Optical Parametric Oscillator-based Wavelength Modulation Spectroscopy

    NARCIS (Netherlands)

    Arslanov, D.D.; Spunei, M.; Ngai, A.K.Y.; Cristescu, S.M.; Lindsay, I.D.; Lindsay, I.D.; Boller, Klaus J.; Persijn, S.T.; Harren, F.J.M.

    2011-01-01

    A fiber-amplified Distributed Bragg Reflector diode laser is used to pump a continuous wave, singly resonant Optical Parametric Oscillator (OPO). The output radiation covers the 3–4 μm with ability of rapid (100 THz/s) and broad mode-hop-free tuning (5 cm−1). Wavelength Modulation Spectroscopy is

  15. Ensemble EMD-based automatic extraction of the catenary structure wavelength from the pantograph-catenary contact corce

    NARCIS (Netherlands)

    Liu, Zhigang; Wang, H.; Dollevoet, R.P.B.J.; Yang, S.; Nunez Vicencio, Alfredo; Zhang, J.

    2016-01-01

    This paper explores the use of pantograph-catenary contact force (PCCF) for monitoring of the current collection quality and detection of anomalies in the interaction between pantograph and catenary. The concept of catenary structure wavelength (CSW) is proposed as the dominant component of PCCF. It

  16. Proton irradiation induced defects in Cd and Zn doped InP

    International Nuclear Information System (INIS)

    Rybicki, G.C.; Williams, W.S.

    1993-01-01

    Proton irradiation induced defects in Zn and Cd doped InP have been studied by deep level transient spectroscopy, (DLTS). After 2 MeV proton irradiation the defects H4 and H5 were observed in lightly Zn doped InP, while the defects H3 and H5 were observed in more heavily Zn and Cd doped InP. The defect properties were not affected by the substitution of Cd for Zn, but the introduction rate of H5 was lower in Cd doped InP. The annealing rate of defects was also higher in Cd doped InP. The use of Cd doped InP may thus result in an InP solar cell with even greater radiation resistance

  17. Integrated cloud infrastructure of the LIT JINR, PE “NULITS” and INP's Astana branch

    Directory of Open Access Journals (Sweden)

    Mazhitova Yelena

    2018-01-01

    Full Text Available The article describes the distributed cloud infrastructure deployed on the basis of the resources of the Laboratory of Information Technologies of the Joint Institute for Nuclear Research (LIT JINR and some JINR Member State organizations. It explains a motivation of that work, an approach it is based on, lists of its participants among which there are private entity “Nazarbayev University Library and IT services” (PE “NULITS” Autonomous Education Organization “Nazarbayev University” (AO NU and The Institute of Nuclear Physics’ (INP's Astana branch.

  18. InP nanowire array solar cell with cleaned sidewalls

    NARCIS (Netherlands)

    Cui, Y.; Plissard, S.; Wang, J.; Vu, T.T.T.; Smalbrugge, E.; Geluk, E.J.; de Vries, T.; Bolk, J.; Trainor, M.J.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

    2013-01-01

    We have fabricated InP nanowire array solar cells with an axial p-n junction. Catalyst gold nanoparticles were first patterned into an array by nanoimprint lithography. The nanowire array was grown in 19 minutes by vapor-liquid-solid growth. The sidewalls were in-situ etched by HCl and ex-situ

  19. Single-electron tunneling in InP nanowires

    NARCIS (Netherlands)

    Franceschi, De S.; Dam, Van J.A.; Bakkers, E.P.A.M.; Feiner, L.F.; Gurevich, L.; Kouwenhoven, L.P.

    2003-01-01

    A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low as ~10 k¿, with minor temperature dependence were obtained. The Coulomb-blockade behavior was shown with single-electron charging energies of ~1 meV.

  20. Spectroscopic determination of valence band parameters in InP

    International Nuclear Information System (INIS)

    Lewis, R.A.; Lough, B.C.C.

    2003-01-01

    Full text: The general form of the Hamiltonian for an electron or hole in a semiconductor has been given by Luttinger. The valence band is characterised by three parameters - γ 1 , γ 2 , γ 3 -now commonly known as the Luttinger parameters. Despite many investigations there is still considerable uncertainty regarding the Luttinger parameters of InP. The situation has been reviewed by Hackenberg et al. These authors themselves sought to determine the Luttinger parameters by hot-electron luminescence and discovered that many Luttinger parameter triplets were consistent with their data. We employ a spectroscopic approach to estimating valence-band parameters in InP. Calculations have been made for both the unperturbed energy levels and the energy levels in a magnetic field of acceptor impurities in semiconductors characterised by different Luttinger parameters. We compare our recent experimental data for the transitions associated with the Zn acceptor impurity in InP in magnetic fields up to 30 T to determine the most appropriate set of valence-band parameters for InP

  1. InP solar cell with window layer

    Science.gov (United States)

    Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

    1994-01-01

    The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

  2. Surface Plasmons on Highly Doped InP

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Ottaviano, Luisa; Semenova, Elizaveta

    2016-01-01

    Silicon doped InP is grown by metal-organic vapor phase epitaxy (MOVPE) using optimized growth parameters to achieve high free carrier concentration. Reflectance of the grown sample in mid-IR range is measured using FTIR and the result is used to retrieve the parameters of the dielectric function...

  3. 1990's annual report of INPE's Plasma Associated Laboratory

    International Nuclear Information System (INIS)

    1991-06-01

    This is the 1990's annual report of INPE's Plasma Associated Laboratory it contains information on current research developed at the laboratory including quiescent plasma, magnetized plasma, plasma centrifuge, plasma and radiation (gyrotron), ionic propulsion, and toroidal plasma. (A.C.A.S.)

  4. Tunable and switchable dual-wavelength single polarization narrow linewidth SLM erbium-doped fiber laser based on a PM-CMFBG filter.

    Science.gov (United States)

    Yin, Bin; Feng, Suchun; Liu, Zhibo; Bai, Yunlong; Jian, Shuisheng

    2014-09-22

    A tunable and switchable dual-wavelength single polarization narrow linewidth single-longitudinal-mode (SLM) erbium-doped fiber (EDF) ring laser based on polarization-maintaining chirped moiré fiber Bragg grating (PM-CMFBG) filter is proposed and demonstrated. For the first time as we know, the CMFBG inscribed on the PM fiber is applied for the wavelength-tunable and-switchable dual-wavelength laser. The PM-CMFBG filter with ultra-narrow transmission band (0.1 pm) and a uniform polarization-maintaining fiber Bragg grating (PM-FBG) are used to select the laser longitudinal mode. The stable single polarization SLM operation is guaranteed by the PM-CMFBG filter and polarization controller. A tuning range of about 0.25 nm with about 0.075 nm step is achieved by stretching the uniform PM-FBG. Meanwhile, the linewidth of the fiber laser for each wavelength is approximate 6.5 and 7.1 kHz with a 20 dB linewidth, which indicates the laser linewidth is approximate 325 Hz and 355 Hz FWHM.

  5. Low-to-high refractive index contrast transition (RICT) device for low loss polymer-based optical coupling

    Science.gov (United States)

    Calabretta, N.; Cooman, I. A.; Stabile, R.

    2018-04-01

    We propose for the first time a coupling device concept for passive low-loss optical coupling, which is compatible with the ‘generic’ indium phosphide (InP) multi-project-wafer manufacturing. A low-to-high vertical refractive index contrast transition InP waveguide is designed and tapered down to adiabatically couple light into a top polymer waveguide. The on-chip embedded polymer waveguide is engineered at the chip facets for offering refractive-index and spot-size-matching to silica fiber-arrays. Numerical analysis shows that coupling losses lower than 1.5 dB can be achieved for a TE-polarized light between the InP waveguide and the on-chip embedded polymer waveguide at 1550 nm wavelength. The performance is mainly limited by the difficulty to control single-mode operation. However, coupling losses lower than 1.9 dB can be achieved for a bandwidth as large as 200 nm. Moreover, the foreseen fabrication process steps are indicated, which are compatible with the ‘generic’ InP multi-project-wafer manufacturing. A fabrication error tolerance study is performed, indicating that fabrication errors occur only in 0.25 dB worst case excess losses, as long as high precision lithography is used. The obtained results are promising and may open the route to large port counts and cheap packaging of InP-based photonic integrated chips.

  6. High efficiency AlGaInN-based light emitting diode in the 360-380 nm wavelength range

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Hisao; Wang, Hong-Xing; Sato, Daisuke; Takaki, Ryohei; Wada, Naoki; Tanahashi, Tetsuya; Yamashita, Kenji; Kawano, Shunsuke; Mizobuchi, Takashi; Dempo, Akihiko; Morioka, Kenji; Kimura, Masahiro; Nohda, Suguru [Nitride Semiconductors Co., Ltd., 115-7 Itayajima, Akinokami, Seto-cho, Naruto, Tokushima 771-0360 (Japan); Sugahara, Tomoya [Satellite Venture Business Laboratory, The University of Tokushima (Japan); Sakai, Shiro [Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506 (Japan)

    2003-11-01

    High performance LEDs emitting in the wavelength range 360-380 nm, are fabricated on sapphire substrates by one-time metalorganic chemical vapor deposition (MOCVD) without using epitaxial lateral overgrowth (ELO) or similar techniques. By improving layer structures and growth conditions, the output power of the LEDs was much improved. The light output power of the LEDs at an injection current of 20 mA is 3.2 mW, 2.5 mW and 1 mW at wavelengths of 378 nm, 373 nm and 363 nm, which correspond to an external quantum efficiency of 4.8%, 3.8% and 1.4%, respectively. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Two-Dimensional Optical CDMA System Parameters Limitations for Wavelength Hopping/Time-Spreading Scheme based on Simulation Experiment

    Science.gov (United States)

    Kandouci, Chahinaz; Djebbari, Ali

    2018-04-01

    A new family of two-dimensional optical hybrid code which employs zero cross-correlation (ZCC) codes, constructed by the balanced incomplete block design BIBD, as both time-spreading and wavelength hopping patterns are used in this paper. The obtained codes have both off-peak autocorrelation and cross-correlation values respectively equal to zero and unity. The work in this paper is a computer experiment performed using Optisystem 9.0 software program as a simulator to determine the wavelength hopping/time spreading (WH/TS) OCDMA system performances limitations. Five system parameters were considered in this work: the optical fiber length (transmission distance), the bitrate, the chip spacing and the transmitted power. This paper shows for what sufficient system performance parameters (BER≤10-9, Q≥6) the system can stand for.

  8. Multi-wavelength conversion at 10 Gb/s and 40 GHZ based on nonlinear effects in HNLF

    Czech Academy of Sciences Publication Activity Database

    Karásek, Miroslav; Kaňka, Jiří; Honzátko, Pavel; Vojtěch, J.; Radil, J.

    2007-01-01

    Roč. 62, 7/8 (2007), s. 925-937 ISSN 0003-4347 R&D Projects: GA ČR GA102/05/0995; GA MŠk 1P05OC001 Institutional research plan: CEZ:AV0Z20670512 Keywords : optical communication * optical fibres * wavelength division multiplexing Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.206, year: 2007

  9. Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

    Science.gov (United States)

    Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

    2018-05-09

    III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

  10. Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer.

    Science.gov (United States)

    Black, L E; Cavalli, A; Verheijen, M A; Haverkort, J E M; Bakkers, E P A M; Kessels, W M M

    2017-10-11

    III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a PO x layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since PO x is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al 2 O 3 capping layer to form a PO x /Al 2 O 3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm -2 ), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as

  11. Silicon opto-electronic wavelength tracker based on an asymmetric 2x3 Mach-Zehnder Interferometer

    OpenAIRE

    Doménech Gómez, José David; Sanchez Fandiño, Javier Antonio; Gargallo Jaquotot, Bernardo Andrés; Baños Lopez, Rocio; Muñoz Muñoz, Pascual

    2014-01-01

    In this paper we report on the experimental demonstration of a Silicon-on-Insulator opto-electronic wavelength tracker for the optical telecommunication C-band. The device consist of a 2x3 Mach-Zehnder Interferometer (MZI) with 10 pm resolution and photo-detectors integrated on the same chip. The MZI is built interconnecting two Multimode Interference (MMI) couplers with two waveguides whose length difference is 56 mm. The first MMI has a coupling ratio of 95:05 to com...

  12. Free-space optics mode-wavelength division multiplexing system using LG modes based on decision feedback equalization

    Science.gov (United States)

    Amphawan, Angela; Ghazi, Alaan; Al-dawoodi, Aras

    2017-11-01

    A free-space optics mode-wavelength division multiplexing (MWDM) system using Laguerre-Gaussian (LG) modes is designed using decision feedback equalization for controlling mode coupling and combating inter symbol interference so as to increase channel diversity. In this paper, a data rate of 24 Gbps is achieved for a FSO MWDM channel of 2.6 km in length using feedback equalization. Simulation results show significant improvement in eye diagrams and bit-error rates before and after decision feedback equalization.

  13. Free-space optics mode-wavelength division multiplexing system using LG modes based on decision feedback equalization

    Directory of Open Access Journals (Sweden)

    Amphawan Angela

    2017-01-01

    Full Text Available A free-space optics mode-wavelength division multiplexing (MWDM system using Laguerre-Gaussian (LG modes is designed using decision feedback equalization for controlling mode coupling and combating inter symbol interference so as to increase channel diversity. In this paper, a data rate of 24 Gbps is achieved for a FSO MWDM channel of 2.6 km in length using feedback equalization. Simulation results show significant improvement in eye diagrams and bit-error rates before and after decision feedback equalization.

  14. Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculations

    Science.gov (United States)

    Gadret, E. G.; Dias, G. O.; Dacal, L. C. O.; de Lima, M. M., Jr.; Ruffo, C. V. R. S.; Iikawa, F.; Brasil, M. J. S. P.; Chiaramonte, T.; Cotta, M. A.; Tizei, L. H. G.; Ugarte, D.; Cantarero, A.

    2010-09-01

    We investigated experimentally and theoretically the valence-band structure of wurtzite InP nanowires. The wurtzite phase, which usually is not stable for III-V phosphide compounds, has been observed in InP nanowires. We present results on the electronic properties of these nanowires using the photoluminescence excitation technique. Spectra from an ensemble of nanowires show three clear absorption edges separated by 44 meV and 143 meV, respectively. The band edges are attributed to excitonic absorptions involving three distinct valence-bands labeled: A, B, and C. Theoretical results based on “ab initio” calculation gives corresponding valence-band energy separations of 50 meV and 200 meV, respectively, which are in good agreement with the experimental results.

  15. [The Detection of Ultra-Broadband Terahertz Spectroscopy of InP Wafer by Using Coherent Heterodyne Time-Domain Spectrometer].

    Science.gov (United States)

    Zhang, Liang-liang; Zhang, Rui; Xu, Xiao-yan; Zhang, Cun-lin

    2016-02-01

    Indium Phosphide (InP) has attracted great physical interest because of its unique characteristics and is indispensable to both optical and electronic devices. However, the optical property of InP in the terahertz range (0. 110 THz) has not yet been fully characterized and systematically studied. The former researches about the properties of InP concentrated on the terahertz frequency between 0.1 and 4 THz. The terahertz optical properties of the InP in the range of 4-10 THz are still missing. It is fairly necessary to fully understand its properties in the entire terahertz range, which results in a better utilization as efficient terahertz devices. In this paper, we study the optical properties of undoped (100) InP wafer in the ultra-broad terahertz frequency range (0.5-18 THz) by using air-biased-coherent-detection (ABCD) system, enabling the coherent detection of terahertz wave in gases, which leads to a significant improvement on the dynamic range and sensitivity of the system. The advantage of this method is broad frequency bandwidth from 0.2 up to 18 THz which is only mainly limited by laser pulse duration since it uses ionized air as terahertz emitter and detector instead of using an electric optical crystal or photoconductive antenna. The terahertz pulse passing through the InP wafer is delayed regarding to the reference pulse and has much lower amplitude. In addition, the frequency spectrum amplitude of the terahertz sample signal drops to the noise floor level from 6.7 to 12.1 THz. At the same time InP wafer is opaque at the frequencies spanning from 6.7 to 12.1 THz. In the frequency regions of 0.8-6.7 and 12.1-18 THz it has relativemy low absorption coefficient. Meanwhile, the refractive index increases monotonously in the 0.8-6.7 THz region and 12.1-18 THz region. These findings will contribute to the design of InP based on nonlinear terahertz devices.

  16. Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si

    Science.gov (United States)

    Castellano, A.; Cerutti, L.; Rodriguez, J. B.; Narcy, G.; Garreau, A.; Lelarge, F.; Tournié, E.

    2017-06-01

    We report on electrically pumped GaSb-based laser diodes monolithically grown on Si and operating in a continuous wave (cw) in the telecom wavelength range. The laser structures were grown by molecular-beam epitaxy on 6°-off (001) substrates. The devices were processed in coplanar contact geometry. 100 μm × 1 mm laser diodes exhibited a threshold current density of 1 kA/cm-2 measured under pulsed operation at 20 °C. CW operation was achieved up to 35 °C with 10 μm × 1 mm diodes. The output power at 20 °C was around 3 mW/uncoated facet, and the cw emission wavelength 1.59 μm, in the C/L-band of telecom systems.

  17. Background–limited long wavelength infrared InAs/InAs1− xSbx type-II superlattice-based photodetectors operating at 110 K

    Directory of Open Access Journals (Sweden)

    Abbas Haddadi

    2017-03-01

    Full Text Available We report the demonstration of high-performance long-wavelength infrared (LWIR nBn photodetectors based on InAs/InAs1− xSbx type-II superlattices. A new saw-tooth superlattice design was used to implement the electron barrier of the photodetectors. The device exhibited a cut-off wavelength of ∼10 μ m at 77 K. The photodetector exhibited a peak responsivity of 2.65 A/W, corresponding to a quantum efficiency of 43%. With an R × A of 664 Ω · cm 2 and a dark current density of 8 × 10−5 A/cm2, under −80 mV bias voltage at 77 K, the photodetector exhibited a specific detectivity of 4.72 × 1011 cm· Hz / W and a background–limited operating temperature of 110 K.

  18. OCDMA PON supporting ONU inter-networking based on gain-switched Fabry-Pérot lasers with external dual-wavelength injection.

    Science.gov (United States)

    Liu, Jie; Zeng, Duoduo; Guo, Changjian; Xu, Lei; He, Sailing

    2010-10-25

    We propose and demonstrate an OCDMA-PON scheme with optical network unit (ONU) internetworking capability, which utilizes low-cost gain-switched Fabry-Pérot (GS-FP) lasers with external dual-wavelength injection as the pulse sources on the ONU side. The injection-generated optical pulses in two wavelengths from the same GS-FP laser are used separately for the PON uplink transmission and ONU internetworking. Experimental results based on a two-user OCDMA system confirm the feasibility of the proposed scheme. With OCDMA technologies, separate ONU-internetworking groups can be established using different optical codes. We also give experiment results to analyze the performance of the ONU-ONU transmission at different power of interference signals when two ONU-internetworking groups are present in the OCDMA-PON.

  19. Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si

    Directory of Open Access Journals (Sweden)

    A. Castellano

    2017-06-01

    Full Text Available We report on electrically pumped GaSb-based laser diodes monolithically grown on Si and operating in a continuous wave (cw in the telecom wavelength range. The laser structures were grown by molecular-beam epitaxy on 6°-off (001 substrates. The devices were processed in coplanar contact geometry. 100 μm × 1 mm laser diodes exhibited a threshold current density of 1 kA/cm−2 measured under pulsed operation at 20 °C. CW operation was achieved up to 35 °C with 10 μm × 1 mm diodes. The output power at 20 °C was around 3 mW/uncoated facet, and the cw emission wavelength 1.59 μm, in the C/L-band of telecom systems.

  20. A new method for calculating number concentrations of cloud condensation nuclei based on measurements of a three-wavelength humidified nephelometer system

    Science.gov (United States)

    Tao, Jiangchuan; Zhao, Chunsheng; Kuang, Ye; Zhao, Gang; Shen, Chuanyang; Yu, Yingli; Bian, Yuxuan; Xu, Wanyun

    2018-02-01

    The number concentration of cloud condensation nuclei (CCN) plays a fundamental role in cloud physics. Instrumentations of direct measurements of CCN number concentration (NCCN) based on chamber technology are complex and costly; thus a simple way for measuring NCCN is needed. In this study, a new method for NCCN calculation based on measurements of a three-wavelength humidified nephelometer system is proposed. A three-wavelength humidified nephelometer system can measure the aerosol light-scattering coefficient (σsp) at three wavelengths and the light-scattering enhancement factor (fRH). The Ångström exponent (Å) inferred from σsp at three wavelengths provides information on mean predominate aerosol size, and hygroscopicity parameter (κ) can be calculated from the combination of fRH and Å. Given this, a lookup table that includes σsp, κ and Å is established to predict NCCN. Due to the precondition for the application, this new method is not suitable for externally mixed particles, large particles (e.g., dust and sea salt) or fresh aerosol particles. This method is validated with direct measurements of NCCN using a CCN counter on the North China Plain. Results show that relative deviations between calculated NCCN and measured NCCN are within 30 % and confirm the robustness of this method. This method enables simplerNCCN measurements because the humidified nephelometer system is easily operated and stable. Compared with the method using a CCN counter, another advantage of this newly proposed method is that it can obtain NCCN at lower supersaturations in the ambient atmosphere.

  1. Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

    Science.gov (United States)

    Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

    2005-01-01

    In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

  2. The design and manufacture of a notch structure for a planar InP Gunn diode

    International Nuclear Information System (INIS)

    Bai Yang; Jia Rui; Wu De-Qi; Jin Zhi; Liu Xin-Yu

    2013-01-01

    A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits. We design two kinds of InP-based Gunn diodes. One has a fixed diameter of cathode area, but has variable spacing between anode and cathode; the other has fixed spacing, but a varying diameter. The threshold voltage and saturated current exhibit their strong dependences on the spacing (10 μm–20 μm) and diameter (40 μm–60 μm) of the InP Gunn diode. The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA–397 mA. In this work, the diameter of the diode and the space between anode and cathode are optimized. The devices are fabricated using a wet etching technique and show excellent performances. The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. An Efficient and Effective Design of InP Nanowires for Maximal Solar Energy Harvesting.

    Science.gov (United States)

    Wu, Dan; Tang, Xiaohong; Wang, Kai; He, Zhubing; Li, Xianqiang

    2017-11-25

    Solar cells based on subwavelength-dimensions semiconductor nanowire (NW) arrays promise a comparable or better performance than their planar counterparts by taking the advantages of strong light coupling and light trapping. In this paper, we present an accurate and time-saving analytical design for optimal geometrical parameters of vertically aligned InP NWs for maximal solar energy absorption. Short-circuit current densities are calculated for each NW array with different geometrical dimensions under solar illumination. Optimal geometrical dimensions are quantitatively presented for single, double, and multiple diameters of the NW arrays arranged both squarely and hexagonal achieving the maximal short-circuit current density of 33.13 mA/cm 2 . At the same time, intensive finite-difference time-domain numerical simulations are performed to investigate the same NW arrays for the highest light absorption. Compared with time-consuming simulations and experimental results, the predicted maximal short-circuit current densities have tolerances of below 2.2% for all cases. These results unambiguously demonstrate that this analytical method provides a fast and accurate route to guide high performance InP NW-based solar cell design.

  4. Passively Q-switched dual-wavelength thulium-doped fiber laser based on a multimode interference filter and a semiconductor saturable absorber

    Science.gov (United States)

    Wang, M.; Huang, Y. J.; Ruan, S. C.

    2018-04-01

    In this paper, we have demonstrated a theta cavity passively Q-switched dual-wavelength fiber laser based on a multimode interference filter and a semiconductor saturable absorber. Relying on the properties of the fiber theta cavity, the laser can operate unidirectionally without an optical isolator. A semiconductor saturable absorber played the role of passive Q-switch while a section of single-mode-multimode-single-mode fiber structure served as an multimode interference filter and was used for selecting the lasing wavelengths. By suitably manipulating the polarization controller, stable dual-wavelength Q-switched operation was obtained at ~1946.8 nm and ~1983.8 nm with maximum output power and minimum pulse duration of ~47 mW and ~762.5 ns, respectively. The pulse repetition rate can be tuned from ~20.2 kHz to ~79.7 kHz by increasing the pump power from ~2.12 W to ~5.4 W.

  5. Porous InP as piezoelectric matrix material in 1-3 magnetoelectric composite sensors

    International Nuclear Information System (INIS)

    Gerngross, M.-D.; Leisner, M.; Carstensen, J.; Foell, H.

    2011-01-01

    This work shows the results of the fabrication of semi-insulating piezoelectric porous InP structures by electrochemical etching and subsequent purely chemical post-etching in an isotropic HF, HNO 3 , EtOH and HAc containing electrolyte. The piezoelectric modulus d 14 of porous InP is measured to around |60| pm / V, which larger by a factor of 30 compared to bulk InP.

  6. A tunable dual-wavelength pump source based on simulated polariton scattering for terahertz-wave generation

    International Nuclear Information System (INIS)

    Sun, Bo; Liu, Jinsong; Yao, Jianquan; Li, Enbang

    2013-01-01

    We propose a dual-wavelength pump source by utilizing stimulated polariton scattering in a LiNbO 3 crystal. The residual pump and the generated tunable Stokes waves can be combined to generate THz-wave generation via difference frequency generation (DFG). With a pump energy of 49 mJ, Stokes waves with a tuning range from 1067.8 to 1074 nm have been generated, and an output energy of up to 14.9 mJ at 1070 nm has been achieved with a conversion efficiency of 21.7%. A sum frequency generation experiment was carried out to demonstrate the feasibility of the proposed scheme for THz-wave DFG. (paper)

  7. Radiation defects in electron-irradiated InP crystals

    International Nuclear Information System (INIS)

    Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P.

    1982-01-01

    The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed. (author)

  8. Optical properties of Sulfur doped InP single crystals

    Science.gov (United States)

    El-Nahass, M. M.; Youssef, S. B.; Ali, H. A. M.

    2014-05-01

    Optical properties of InP:S single crystals were investigated using spectrophotometric measurements in the spectral range of 200-2500 nm. The absorption coefficient and refractive index were calculated. It was found that InP:S crystals exhibit allowed and forbidden direct transitions with energy gaps of 1.578 and 1.528 eV, respectively. Analysis of the refractive index in the normal dispersion region was discussed in terms of the single oscillator model. Some optical dispersion parameters namely: the dispersion energy (Ed), single oscillator energy (Eo), high frequency dielectric constant (ɛ∞), and lattice dielectric constant (ɛL) were determined. The volume and the surface energy loss functions (VELF & SELF) were estimated. Also, the real and imaginary parts of the complex conductivity were calculated.

  9. Effects of mask imperfections on InP etching profiles

    International Nuclear Information System (INIS)

    Huo, D.T.C.; Yan, M.F.; Wynn, J.D.; Wilt, D.P.

    1990-01-01

    The authors have demonstrated that the quality of etch masks has a significant effect on the InP etching profiles. In particular, the authors have shown that mask imperfections can cause defective etching profiles, such as vertical sidewalls and extra mask undercutting in InP. The authors also discovered that the geometry of these defective profiles is determined by the orientation of the substrate relative to the direction of the mask imperfections. Along a left-angle 110 right-angle line mask defect, the downward etching process changes the left-angle 110 right-angle v-grooves to vertical sidewalls without extra undercutting. For v-grooves aligned along the left-angle 110 right-angle direction, defects on the mask give a significant extra undercutting without changing the etching profile

  10. Low temperature synthesis of InP nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Ung Thi Dieu Thuy [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); Tran Thi Thuong Huyen [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); National University of Thai Nguyen, 2 Luong Ngoc Quyen, Thai Nguyen (Viet Nam); Nguyen Quang Liem [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam)], E-mail: liemnq@ims.vast.ac.vn; Reiss, Peter [DSM/INAC/SPrAM, UMR 5819 CEA-CNRS-Universite Joseph Fourier/LEMOH, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2008-12-20

    We present a simple method for the chemical synthesis of InP nanocrystals, which comprises several advantages: (i) the use of simple reagents, namely InCl{sub 3}.4H{sub 2}O and yellow P as the In and P precursors, respectively, and NaBH{sub 4} as the reducing agent in a mixed solvent of ethanol and toluene; (ii) a short reaction time (1-5 h) and low temperature (<75 deg. C); (iii) a high reaction yield approaching 100%. InP NCs in the zinc-blende structure have been obtained as confirmed by powder X-ray diffraction and Raman scattering measurements. Their mean size of 4 nm has been determined by transmission electron microscopy, Raman scattering and absorption spectroscopy.

  11. Low temperature synthesis of InP nanocrystals

    International Nuclear Information System (INIS)

    Ung Thi Dieu Thuy; Tran Thi Thuong Huyen; Nguyen Quang Liem; Reiss, Peter

    2008-01-01

    We present a simple method for the chemical synthesis of InP nanocrystals, which comprises several advantages: (i) the use of simple reagents, namely InCl 3 .4H 2 O and yellow P as the In and P precursors, respectively, and NaBH 4 as the reducing agent in a mixed solvent of ethanol and toluene; (ii) a short reaction time (1-5 h) and low temperature (<75 deg. C); (iii) a high reaction yield approaching 100%. InP NCs in the zinc-blende structure have been obtained as confirmed by powder X-ray diffraction and Raman scattering measurements. Their mean size of 4 nm has been determined by transmission electron microscopy, Raman scattering and absorption spectroscopy

  12. Anodic oxidation of InP in pure water

    International Nuclear Information System (INIS)

    Robach, Y.; Joseph, J.; Bergignat, E.; Hollinger, G.

    1989-01-01

    It is shown that thin InP native oxide films can be grown by anodization of InP in pure water. An interfacial phosphorus-rich In(PO 3 ) 3 -like condensed phosphate is obtained this way. This condensed phosphate has good passivating properties and can be used in electronic device technology. The chemical composition of these native oxides was found similar to that of an anodic oxide grown in an anodization in glycol and water (AGW) electrolyte. From the similarity between the two depth profiles observed in pure water and AGW electrolyte, they can conclude that dissolution phenomena do not seem to play a major role. The oxide growth seems to be controlled by the drift of ionic species under the electric field

  13. 10-GHz return-to-zero pulse source tunable in wavelength with a single- or multiwavelength output based on four-wave mixing in a newly developed highly nonlinear fiber

    DEFF Research Database (Denmark)

    Clausen, A. T.; Oxenlowe, L.; Peucheret, Christophe

    2001-01-01

    In this letter, a novel scheme for a wavelength-tunable pulse source (WTPS) is proposed and characterized. It is based on four-wave mixing (FWM) in a newly developed highly nonlinear fiber between a return-to-zero (RZ) pulsed signal at a fixed wavelength and a continuous wave probe tunable...

  14. Study of discharge in quiescent plasma machine of the INPE

    International Nuclear Information System (INIS)

    Ferreira, J.G.; Ferreira, J.L.; Ludwig, G.O.; Maciel, H.S.

    1988-12-01

    Measurements of principal plasma parameters produced by quiescent plasma machine of the Instituto de Pesquisas Espaciais (INPE) for current of 500 mA and several values of pressure and discharge power are presented. A qualitative interpretation for obtained results is done and a simple model for plasma density is compared with experimental values. The conditions of cathode operation are also investigated. (M.C.K.)

  15. Chemical etching and polishing of InP

    International Nuclear Information System (INIS)

    Kurth, E.; Reif, A.; Gottschalch, V.; Finster, J.; Butter, E.

    1988-01-01

    This paper describes possibilities of several chemical preparations for the selective cleaning of InP surfaces. The investigations of the surface states after the chemical treatment were carried out by means of XPS measurements. A pre-etching with (NH 4 ) 2 S 2 O 8 :H 2 SO 4 :H 2 O and a polishing with 1% bromine in methanol produce optically smooth (100)-and (111) P surfaces free of oxides. (author)

  16. Correlations for damage in diffused-junction InP solar cells induced by electron and proton irradiation

    International Nuclear Information System (INIS)

    Yamaguchi, M.; Takamoto, T.; Taylor, S.J.; Walters, R.J.; Summers, G.P.; Flood, D.J.; Ohmori, M.

    1997-01-01

    The damage to diffused-junction n + -p InP solar cells induced by electron and proton irradiations over a wide range of energy from 0.5 to 3 MeV and 0.015 to 20 MeV, respectively, has been examined. The experimental electron and proton damage coefficients have been analyzed in terms of displacement damage dose, which is the product of the particle fluence and the calculated nonionizing energy loss [G. P. Summers, E. A. Burke, R. Shapiro, S. R. Messenger, and R. J. Walters, IEEE Trans. Nucl. Sci. 40, 1300 (1993).] Degradation of InP cells due to irradiation with electrons and protons with energies of more than 0.5 MeV show a single curve as a function of displacement damage dose. Based on the deep-level transient spectroscopy analysis, damage equivalence between electron and proton irradiation is discussed. InP solar cells are confirmed to be substantially more radiation resistant than Si and GaAs-on-Ge cells. copyright 1997 American Institute of Physics

  17. Effect of sulphur-doping on the formation of deep centers in n-type InP under irradiation

    International Nuclear Information System (INIS)

    Kol'chenko, T.I.; Lomako, V.M.; Moroz, S.E.

    1988-01-01

    Effect of sulfur-doping on the efficiency of electron trap formation in InP under irradiation was studied using deep level capacity nonstationary spectroscopy method (DLCNS). Structures with Schottky barrier based on epitaxial InP films with ∼10μm thickness (n 0 =8x10 14 -6x10 17 cm -3 ) were irradiated with 60 Co γ-quanta at 40 deg C; the particle flux intensity made up ∼10 12 cm -2 xs -1 . Experimental results presented allow one to conclude that InP doping with sulfur up to n 0 =6x10 17 cm -3 in contrast to the case of silicon doping does not produce a notable effect on the electron trap formation efficiency under irradiation. The observed reduction of configuration-bistable M-center introduction rate in samples with n 0 >10 16 cm -3 is explained by the change of filling of E c -0.12 eV level belonging to unknown X defect

  18. Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.

    Science.gov (United States)

    Niu, Gang; Capellini, Giovanni; Hatami, Fariba; Di Bartolomeo, Antonio; Niermann, Tore; Hussein, Emad Hameed; Schubert, Markus Andreas; Krause, Hans-Michael; Zaumseil, Peter; Skibitzki, Oliver; Lupina, Grzegorz; Masselink, William Ted; Lehmann, Michael; Xie, Ya-Hong; Schroeder, Thomas

    2016-10-12

    The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO 2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

  19. Diameter Dependence of Planar Defects in InP Nanowires.

    Science.gov (United States)

    Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, SenPo; Shen, Lifan; Han, Ning; Pun, Edwin Y B; Ho, Johnny C

    2016-09-12

    In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of "bottom-up" InP NWs with minimized defect concentration which are suitable for various device applications.

  20. Measurement of polarization dependence of two-photon absorption coefficient in InP using extended Z-scan technique for thick materials

    Science.gov (United States)

    Oishi, Masaki; Shinozaki, Tomohisa; Hara, Hikaru; Yamamoto, Kazunuki; Matsusue, Toshio; Bando, Hiroyuki

    2018-03-01

    The two-photon absorption coefficient β in InP has been measured in the wavelength range of 1640 to 1800 nm by the Z-scan technique in relatively thick materials. The values of β have been evaluated from the fit to the equation including the spatial and temporal profiles of the focused Gaussian beam. The polarization dependence of β has also been measured. The dependence has been expressed very well by the expression of β with the imaginary part of the third-order nonlinear susceptibility tensor χ(3).

  1. Characterization of InAs quantum wires on (001) InP: toward the realization of VCSEL structures with a stabilized polarization

    OpenAIRE

    Lamy , Jean-Michel; Levallois , Christophe; Nakkar , Abdulhadi; Caroff , Philippe; Paranthoen , Cyril; Dehaese , Olivier; Le Corre , Alain; Ramdane , Abderrahim; Loualiche , Slimane

    2006-01-01

    International audience; We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is...

  2. Radiation hardening of InP solar cells for space applications

    International Nuclear Information System (INIS)

    Vilela, M. F.; Freundlich, A.; Monier, C.; Newman, F.; Aguilar, L.

    1998-01-01

    The aim of this work is to develop a radiation resistant thin InP-based solar cells for space applications on more mechanically resistant, lighter, and cheaper substrates. In this paper, we present the development of a p + /nn + InP-based solar cell structures with very thin emitter and base layers. A thin emitter helps to increase the collection of carriers generated by high energy incident photons from the solar spectrum. The use of a thin n base structure should improve the radiation resistance of this already radiation resistant technology. A remarkable improvement of high energy photons response is shown for InP solar cells with emitters 400 A thick

  3. Wavelength conversion devices

    DEFF Research Database (Denmark)

    Mikkelsen, Benny; Durhuus, Terji; Jørgensen, Carsten

    1996-01-01

    system requirements. The ideal wavelength converter should be transparent to the bit rate and signal format and provide an unchirped output signal with both a high extinction ratio and a large signal-to-noise ratio. It should allow conversion to both shorter and longer wavelengths with equal performance...

  4. A Novel Dynamic Wavelength Cross-connect Based on Mach-Zehnder Interferometer Optical ad/drop Multiplexer and Optical Space Switch

    DEFF Research Database (Denmark)

    Xueyan, Zheng; Liu, Fenghai

    1999-01-01

    We have proposed a novel dynamic WXC based on MZI-OADM. The advantages of this dynamic WXC are very low differential insertion loss, using less exchanging units than reported structures, and the ability to be integrated. In experiment, the three channels from the path with maximum OADMs in a 2×2 ......×2 dynamic WXC capable of exchanging five wavelengths show negligible power penalty at BER of 10-9. The above advantages make this kind of dynamic WXC very promising for future WDM networks...

  5. Analytical electron microscope based on scanning transmission electron microscope with wavelength dispersive x-ray spectroscopy to realize highly sensitive elemental imaging especially for light elements

    International Nuclear Information System (INIS)

    Koguchi, Masanari; Tsuneta, Ruriko; Anan, Yoshihiro; Nakamae, Koji

    2017-01-01

    An analytical electron microscope based on the scanning transmission electron microscope with wavelength dispersive x-ray spectroscopy (STEM-WDX) to realize highly sensitive elemental imaging especially for light elements has been developed. In this study, a large-solid-angle multi-capillary x-rays lens with a focal length of 5 mm, long-time data acquisition (e.g. longer than 26 h), and a drift-free system made it possible to visualize boron-dopant images in a Si substrate at a detection limit of 0.2 atomic percent. (paper)

  6. At-wavelength metrology using the moiré fringe analysis method based on a two dimensional grating interferometer

    International Nuclear Information System (INIS)

    Wang, Hongchang; Berujon, Sebastien; Pape, Ian; Rutishauser, Simon; David, Christian; Sawhney, Kawal

    2013-01-01

    A two-dimensional (2D) grating interferometer was used to perform at-wavelength metrology. A Fast Fourier Transform (FFT) of the interferograms recovers the differential X-ray beam phase in two orthogonal directions simultaneously. As an example, the X-ray wavefronts downstream from a Fresnel Zone plate were measured using the moiré fringe analysis method, which requires only a single image. The rotating shearing interferometer technique for moiré fringe analysis was extended from one dimension to two dimensions to carry out absolute wavefront metrology. In addition, the 2D moiré fringes were extrapolated using Gerchberg's method to reduce the boundary artifacts. The advantages and limitations of the phase-stepping method and the moiré fringe analysis method are also discussed. -- Highlights: ► A rapid and sensitive strip test for CPPU (forchlorfenuron) detection is reported. ► Carbon nanoparticles were used for antibody labelling. ► A common flatbed scanner was employed to the quantitate strip spots. ► The new method was successfully applied to the analysis of the field samples

  7. Ground-based Detection of Deuterated Water in Comet C/2014 Q2 (Lovejoy) at IR Wavelengths

    Energy Technology Data Exchange (ETDEWEB)

    Paganini, L.; Mumma, M. J.; Villanueva, G. L. [Goddard Center for Astrobiology, NASA Goddard Space Flight Center, Greenbelt, MD (United States); Gibb, E. L. [Department of Physics and Astronomy, University of Missouri, St. Louis, MO (United States)

    2017-02-20

    We conducted a deep search for deuterated water (HDO) in the Oort Cloud comet C/2014 Q2 (Lovejoy), through infrared (IR) spectroscopy with NIRSPEC at the Keck Observatory. In this Letter, we present our detections of HDO and water (H{sub 2}O) in comet Lovejoy on 2015 February 4 (post-perihelion) after 1 hr integration on source. The IR observations allowed simultaneous detection of H{sub 2}O and HDO, yielding production rates of 5.9 ± 0.13 × 10{sup 29} and 3.6 ± 1.0 × 10{sup 26} molecules s{sup −1}, respectively. The simultaneous detection permitted accurate determination of the isotopic ratio (D/H) in water of 3.02 ± 0.87 × 10{sup −4}, i.e., larger than the value for water in terrestrial oceans (or Vienna Standard Mean Ocean Water, VSMOW) by a factor of 1.94 ± 0.56. This D/H ratio in water exceeds the value obtained independently at millimeter wavelengths (0.89 ± 0.25 VSMOW; pre-perihelion). We discuss these parameters in the context of origins and emphasize the need for contemporaneous measurements of HDO and H{sub 2}O.

  8. Ground-based Detection of Deuterated Water in Comet C/2014 Q2 (Lovejoy) at IR Wavelengths

    International Nuclear Information System (INIS)

    Paganini, L.; Mumma, M. J.; Villanueva, G. L.; Gibb, E. L.

    2017-01-01

    We conducted a deep search for deuterated water (HDO) in the Oort Cloud comet C/2014 Q2 (Lovejoy), through infrared (IR) spectroscopy with NIRSPEC at the Keck Observatory. In this Letter, we present our detections of HDO and water (H 2 O) in comet Lovejoy on 2015 February 4 (post-perihelion) after 1 hr integration on source. The IR observations allowed simultaneous detection of H 2 O and HDO, yielding production rates of 5.9 ± 0.13 × 10 29 and 3.6 ± 1.0 × 10 26 molecules s −1 , respectively. The simultaneous detection permitted accurate determination of the isotopic ratio (D/H) in water of 3.02 ± 0.87 × 10 −4 , i.e., larger than the value for water in terrestrial oceans (or Vienna Standard Mean Ocean Water, VSMOW) by a factor of 1.94 ± 0.56. This D/H ratio in water exceeds the value obtained independently at millimeter wavelengths (0.89 ± 0.25 VSMOW; pre-perihelion). We discuss these parameters in the context of origins and emphasize the need for contemporaneous measurements of HDO and H 2 O.

  9. TP53inp1 Gene Is Implicated in Early Radiation Response in Human Fibroblast Cells

    Directory of Open Access Journals (Sweden)

    Nikolett Sándor

    2015-10-01

    Full Text Available Tumor protein 53-induced nuclear protein-1 (TP53inp1 is expressed by activation via p53 and p73. The purpose of our study was to investigate the role of TP53inp1 in response of fibroblasts to ionizing radiation. γ-Ray radiation dose-dependently induces the expression of TP53inp1 in human immortalized fibroblast (F11hT cells. Stable silencing of TP53inp1 was done via lentiviral transfection of shRNA in F11hT cells. After irradiation the clonogenic survival of TP53inp1 knockdown (F11hT-shTP cells was compared to cells transfected with non-targeting (NT shRNA. Radiation-induced senescence was measured by SA-β-Gal staining and autophagy was detected by Acridine Orange dye and microtubule-associated protein-1 light chain 3 (LC3B immunostaining. The expression of TP53inp1, GDF-15, and CDKN1A and alterations in radiation induced mitochondrial DNA deletions were evaluated by qPCR. TP53inp1 was required for radiation (IR induced maximal elevation of CDKN1A and GDF-15 expressions. Mitochondrial DNA deletions were increased and autophagy was deregulated following irradiation in the absence of TP53inp1. Finally, we showed that silencing of TP53inp1 enhances the radiation sensitivity of fibroblast cells. These data suggest functional roles for TP53inp1 in radiation-induced autophagy and survival. Taken together, we suppose that silencing of TP53inp1 leads radiation induced autophagy impairment and induces accumulation of damaged mitochondria in primary human fibroblasts.

  10. Short wavelength FELS

    International Nuclear Information System (INIS)

    Sheffield, R.L.

    1991-01-01

    The generation of coherent ultraviolet and shorter wavelength light is presently limited to synchrotron sources. The recent progress in the development of brighter electron beams enables the use of much lower energy electron rf linacs to reach short-wavelengths than previously considered possible. This paper will summarize the present results obtained with synchrotron sources, review proposed short- wavelength FEL designs and then present a new design which is capable of over an order of magnitude higher power to the extreme ultraviolet. 17 refs., 10 figs

  11. Short wavelength FELS

    Energy Technology Data Exchange (ETDEWEB)

    Sheffield, R.L.

    1991-01-01

    The generation of coherent ultraviolet and shorter wavelength light is presently limited to synchrotron sources. The recent progress in the development of brighter electron beams enables the use of much lower energy electron rf linacs to reach short-wavelengths than previously considered possible. This paper will summarize the present results obtained with synchrotron sources, review proposed short- wavelength FEL designs and then present a new design which is capable of over an order of magnitude higher power to the extreme ultraviolet. 17 refs., 10 figs.

  12. Tumor protein 53-induced nuclear protein 1 (TP53INP1 enhances p53 function and represses tumorigenesis

    Directory of Open Access Journals (Sweden)

    Jeyran eShahbazi

    2013-05-01

    Full Text Available Tumor protein 53-induced nuclear protein 1 (TP53INP1 is a stress-induced p53 target gene whose expression is modulated by transcription factors such as p53, p73 and E2F1. TP53INP1 gene encodes two isoforms of TP53INP1 proteins, TP53INP1α and TP53INP1β, both of which appear to be key elements in p53 function. When associated with homeodomain-interacting protein kinase-2 (HIPK2, TP53INP1 phosphorylates p53 protein at Serine 46, enhances p53 protein stability and its transcriptional activity, leading to transcriptional activation of p53 target genes such as p21, PIG-3 and MDM2, cell growth arrest and apoptosis upon DNA damage stress. The anti-proliferative and pro-apoptotic activities of TP53INP1 indicate that TP53INP1 has an important role in cellular homeostasis and DNA damage response. Deficiency in TP53INP1 expression results in increased tumorigenesis; while TP53INP1 expression is repressed during early stages of cancer by factors such as miR-155. This review aims to summarize the roles of TP53INP1 in blocking tumor progression through p53-dependant and p53-independent pathways, as well as the elements which repress TP53INP1 expression, hence highlighting its potential as a therapeutic target in cancer treatment.

  13. Efficiency enhancement of InP nanowire solar cells by surface cleaning

    NARCIS (Netherlands)

    Cui, Y.; Wang, J.; Plissard, S.R.; Cavalli, A.; Vu, T.T.T.; Veldhoven, van P.J.; Gao, L.; Trainor, M.J.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

    2013-01-01

    We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p–n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We

  14. The temperature dependence of 1/f noise in InP

    NARCIS (Netherlands)

    Chen, X.Y.; Hooge, F.N.; Leijs, M.R.

    1997-01-01

    Noise spectra were measured on CBE grown InP samples in the frequency range from 1 Hz to 104 kHz at temperatures from 77 to 500 K. The experimental results show that llfnoise stems from the lattice scattering. The 1/f noise in InP is well characterised by a parameter CtL~,, in this temperature

  15. InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

    Science.gov (United States)

    Deal, William R.; Chattopadhyay, Goutam

    2012-01-01

    The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

  16. Silicon doped InP as an alternative plasmonic material for mid-infrared

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn

    2016-01-01

    Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection...

  17. Photoacoustic investigation of doped InP using open cell configuration

    NARCIS (Netherlands)

    George, S.D.; Vallabhan, C.P.G.; Heck, M.J.R.; Radhakrishnan, P.; Nampoori, V.P.N.

    2002-01-01

    An open cell photoacoustic (PA) configuration was employed to evaluate the thermal diffusivity of intrinsic InP as well as InP doped with tin and iron. Thermal diffusivity data were evaluated from variation of phase of PA signal as a function of modulation frequency. In doped samples, we observe a

  18. Tunable and switchable dual-wavelength passively mode-locked Bi-doped all-fiber ring laser based on nonlinear polarization rotation

    International Nuclear Information System (INIS)

    Luo, A-P; Luo, Z-C; Xu, W-C; Dvoyrin, V V; Mashinsky, V M; Dianov, E M

    2011-01-01

    We demonstrate a tunable and switchable dual-wavelength passively mode-locked Bi-doped all-fiber ring laser by using nonlinear polarization rotation (NPR) technique. Exploiting the spectral filtering effect caused by the combination of the polarizer and intracavity birefringence, the wavelength separation of dual-wavelength mode-locked pulses can be flexibly tuned between 2.38 and 20.45 nm. Taking the advantage of NPR-induced intensity-dependent loss to suppress the mode competition, the stable dual-wavelength pulses output is obtained at room temperature. Moreover, the dual-wavelength switchable operation is achieved by simply rotating the polarization controllers (PCs)

  19. Biological constraints limit the use of rapamycin-inducible FKBP12-Inp54p for depleting PIP2 in dorsal root ganglia neurons.

    Science.gov (United States)

    Coutinho-Budd, Jaeda C; Snider, Samuel B; Fitzpatrick, Brendan J; Rittiner, Joseph E; Zylka, Mark J

    2013-09-08

    Rapamycin-induced translocation systems can be used to manipulate biological processes with precise temporal control. These systems are based on rapamycin-induced dimerization of FK506 Binding Protein 12 (FKBP12) with the FKBP Rapamycin Binding (FRB) domain of mammalian target of rapamycin (mTOR). Here, we sought to adapt a rapamycin-inducible phosphatidylinositol 4,5-bisphosphate (PIP2)-specific phosphatase (Inp54p) system to deplete PIP2 in nociceptive dorsal root ganglia (DRG) neurons. We genetically targeted membrane-tethered CFP-FRBPLF (a destabilized FRB mutant) to the ubiquitously expressed Rosa26 locus, generating a Rosa26-FRBPLF knockin mouse. In a second knockin mouse line, we targeted Venus-FKBP12-Inp54p to the Calcitonin gene-related peptide-alpha (CGRPα) locus. We hypothesized that after intercrossing these mice, rapamycin treatment would induce translocation of Venus-FKBP12-Inp54p to the plasma membrane in CGRP+ DRG neurons. In control experiments with cell lines, rapamycin induced translocation of Venus-FKBP12-Inp54p to the plasma membrane, and subsequent depletion of PIP2, as measured with a PIP2 biosensor. However, rapamycin did not induce translocation of Venus-FKBP12-Inp54p to the plasma membrane in FRBPLF-expressing DRG neurons (in vitro or in vivo). Moreover, rapamycin treatment did not alter PIP2-dependent thermosensation in vivo. Instead, rapamycin treatment stabilized FRBPLF in cultured DRG neurons, suggesting that rapamycin promoted dimerization of FRBPLF with endogenous FKBP12. Taken together, our data indicate that these knockin mice cannot be used to inducibly deplete PIP2 in DRG neurons. Moreover, our data suggest that high levels of endogenous FKBP12 could compete for binding to FRBPLF, hence limiting the use of rapamycin-inducible systems to cells with low levels of endogenous FKBP12.

  20. Ultrathin film, high specific power InP solar cells on flexible plastic substrates

    International Nuclear Information System (INIS)

    Shiu, K.-T.; Zimmerman, Jeramy; Wang Hongyu; Forrest, Stephen R.

    2009-01-01

    We demonstrate ultrathin-film, single-crystal InP Schottky-type solar cells mounted on flexible plastic substrates. The lightly p-doped InP cell is grown epitaxially on an InP substrate via gas source molecular beam epitaxy. The InP substrate is removed via selective chemical wet-etching after the epitaxial layers are cold-welded to a 25 μm thick Kapton sheet, followed by the deposition of an indium tin oxide top contact that forms the Schottky barrier with InP. The power conversion efficiency under 1 sun is 10.2±1.0%, and its specific power is 2.0±0.2 kW/kg. The ultrathin-film solar cells can tolerate both tensile and compressive stress by bending over a <1 cm radius without damage.

  1. High conversion efficiency and high radiation resistance InP solar cells

    International Nuclear Information System (INIS)

    Yamamoto, Akio; Itoh, Yoshio; Yamaguchi, Masafumi

    1987-01-01

    The fabrication of homojunction InP solar cells has been studied using impurity thermal diffusion, organometallic vapor phase epitaxy (OMVPE) and liquid phase epitaxy (LPE), and is discussed in this paper. Conversion efficiencies exceeding 20 % (AM1.5) are attained. These are the most efficient results ever reported for InP cells, and are comparable to those for GaAs cells. Electron and γ-ray irradiation studies have also been conducted for fabricated InP cells. The InP cells were found to have higher radiation resistance than GaAs cells. Through these studies, it has been demonstrated that the InP cells have excellent potential for space application. (author)

  2. Young's Modulus of Wurtzite and Zinc Blende InP Nanowires.

    Science.gov (United States)

    Dunaevskiy, Mikhail; Geydt, Pavel; Lähderanta, Erkki; Alekseev, Prokhor; Haggrén, Tuomas; Kakko, Joona-Pekko; Jiang, Hua; Lipsanen, Harri

    2017-06-14

    The Young's modulus of thin conical InP nanowires with either wurtzite or mixed "zinc blende/wurtzite" structures was measured. It has been shown that the value of Young's modulus obtained for wurtzite InP nanowires (E [0001] = 130 ± 30 GPa) was similar to the theoretically predicted value for the wurtzite InP material (E [0001] = 120 ± 10 GPa). The Young's modulus of mixed "zinc blende/wurtzite" InP nanowires (E [111] = 65 ± 10 GPa) appeared to be 40% less than the theoretically predicted value for the zinc blende InP material (E [111] = 110 GPa). An advanced method for measuring the Young's modulus of thin and flexible nanostructures is proposed. It consists of measuring the flexibility (the inverse of stiffness) profiles 1/k(x) by the scanning probe microscopy with precise control of loading force in nanonewton range followed by simulations.

  3. Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

    Science.gov (United States)

    Joyce, Hannah J; Wong-Leung, Jennifer; Yong, Chaw-Keong; Docherty, Callum J; Paiman, Suriati; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B

    2012-10-10

    Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

  4. Tunable, high-repetition-rate, dual-signal-wavelength femtosecond optical parametric oscillator based on BiB3O6

    Science.gov (United States)

    Meng, Xianghao; Wang, Zhaohua; Tian, Wenlong; Fang, Shaobo; Wei, Zhiyi

    2018-01-01

    We have demonstrated a high-repetition-rate tunable femtosecond dual-signal-wavelength optical parametric oscillator (OPO) based on BiB3O6 (BiBO) crystal, synchronously pumped by a frequency-doubled mode-locked Yb:KGW laser. The cavity is simple since no dispersion compensators are used in the cavity. The wavelength range of dual-signal is widely tunable from 710 to 1000 nm. Tuning is accomplished by rotating phase-matching angle of BiBO, and optimizing cavity length and output coupler. Using a 3.75 W pump laser, the maximum average dual-signal output power is 760 mW at 707 and 750 nm, leading to a conversion efficiency of 20.3% not taking into account the idler power. Our experimental results show a non-critical phase-matching configuration pumped by a high peak power laser source. The operation of the dual-signal benefits from the balance of phase matching and group velocity mismatching between the two signals.

  5. Evaluation of light scattering properties and chromophore concentrations in skin tissue based on diffuse reflectance signals at isosbestic wavelengths of hemoglobin

    Science.gov (United States)

    Yokokawa, Takumi; Nishidate, Izumi

    2016-04-01

    We investigate a method to evaluate light-scattering properties and chromophore concentrations in human skin tissue through diffuse reflectance spectroscopy using the reflectance signals acquired at isosbestic wavelengths of hemoglobin (420, 450, 500, and 585 nm). In the proposed method, Monte Carlo simulation-based empirical formulas are used to specify the scattering parameters of skin tissue, such as the scattering amplitude a and the scattering power b, as well as the concentration of melanin C m and the total blood concentration C tb. The use of isosbestic wavelengths of hemoglobin enables the values of C m, C tb, a, and b to be estimated independently of the oxygenation of hemoglobin. The spectrum of the reduced scattering coefficient is reconstructed from the scattering parameters. Experiments using in vivo human skin tissues were performed to confirm the feasibility of the proposed method for evaluating the changes in scattering properties and chromophore concentrations in skin tissue. The experimental results revealed that light scattering is significantly reduced by the application of a glycerol solution, which indicates an optical clearing effect due to osmotic dehydration and the matching of the refractive indices of scatterers in the epidermis.

  6. Hopping conductivity via deep impurity states in InP

    International Nuclear Information System (INIS)

    Kuznetsov, V.P.; Messerer, M.A.; Omel'yanovskij, Eh.M.

    1984-01-01

    Hopping (epsilon 3 ) and Mott conductivities via deep impurity compounds with localization radius below 10 A have been studied using as an example Mn in InP. It is shown, that the existing theory of hopping conductivity in low-alloyed semiconductors with Na 3 << 1 can be Used for the case of deep centres as successfully as for the case of insignificant hydrogen-like impurities. Fundamental parameters of the theory: localization radius of wave function of deep impurities, state density near the Fermi level, mean hop length, are determined

  7. Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Midili, Virginio; Squartecchia, Michele

    2017-01-01

    A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based...... on an improved UCSD HBT model formulation avoiding an erroneous RciCbci transit-time contribution from the intrinsic collector region as found in other III-V based HBT models. The mutual heating between fingers is modeled by a thermal coupling network with parameters extracted from electro-thermal simulations...

  8. Development of III-Sb metamorphic DBR membranes on InP for vertical cavity laser applications

    Science.gov (United States)

    Addamane, S. J.; Mansoori, A.; Renteria, E. J.; Dawson, N.; Shima, D. M.; Rotter, T. J.; Hains, C. P.; Dawson, L. R.; Balakrishnan, G.

    2016-04-01

    Sb-based metamorphic DBR membranes are developed for InP-based vertical cavity laser applications. The reflectivity of the metamorphic DBR membrane is compared to the reflectivity of a lattice-matched DBR to characterize the optical quality of the DBR membrane. The metamorphic interface between InP and the III-antimonides is found to degrade the reflectivity of the DBR. Therefore, the growth temperature for the metamorphic DBR is optimized in order to obtain highly reflective (>99.8%) III-Sb thin-film membranes.

  9. Phosphorous vacancy nearest neighbor hopping induced instabilities in InP capacitors II. Computer simulation

    International Nuclear Information System (INIS)

    Juang, M.T.; Wager, J.F.; Van Vechten, J.A.

    1988-01-01

    Drain current drift in InP metal insulator semiconductor devices display distinct activation energies and pre-exponential factors. The authors have given evidence that these result from two physical mechanisms: thermionic tunneling of electrons into native oxide traps and phosphorous vacancy nearest neighbor hopping (PVNNH). They here present a computer simulation of the effect of the PVNHH mechanism on flatband voltage shift vs. bias stress time measurements. The simulation is based on an analysis of the kinetics of the PVNNH defect reaction sequence in which the electron concentration in the channel is related to the applied bias by a solution of the Poisson equation. The simulation demonstrates quantitatively that the temperature dependence of the flatband shift is associated with PVNNH for temperatures above room temperature

  10. Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

    International Nuclear Information System (INIS)

    Lumb, M. P.; Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J.; González, M.; Bennett, M. F.; Herrera, M.; Delgado, F. J.; Molina, S. I.

    2016-01-01

    In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm 2 to be realized.

  11. Stability investigation for InP DHBT mm‐wave power amplifier

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom Keinicke; Kammersgaard, Jacob

    2013-01-01

    microwave integrated circuit power amplifier. Experimental results from a redesigned power amplifier with improved stability are presented to confirm that the previously detected oscillation loop is removed using odd‐mode stabilization resistors with the correct choice of values and locations. © 2012 Wiley......In this article, we discuss stability issues for mm‐wave monolithic integrated power amplifiers using InP double heterojunction bipolar transistor (DHBT) technology targeting E‐band applications at 71–76 GHz and 81–86 GHz. Different stability detection methods based on the classical two‐port K......‐Δs pair, linear three‐port graphical analysis, system identifications, circuit modal analysis, and normalized determinant function are all reviewed. The corresponding techniques are employed to predict the occurrence of instability at 15 GHz observed during measurements on a fabricated monolithic...

  12. Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lumb, M. P. [The George Washington University, Washington, DC 20037 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J. [US Naval Research Laboratory, Washington, DC 20375 (United States); González, M.; Bennett, M. F. [Sotera Defense Solutions, Annapolis Junction, Maryland 20701 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Herrera, M.; Delgado, F. J.; Molina, S. I. [University of Cádiz, 11510, Puerto Real, Cádiz (Spain)

    2016-05-21

    In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.

  13. All-Optical 40 Gbit/s Regenerative Wavelength Conversion Based on Cross-Phase Modulation in a Silicon Nanowire

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Hu, Hao; Ji, Hua

    2013-01-01

    We successfully demonstrate all-optical regeneration of a 40 Gbit/s signal based on cross-phase modulation in a silicon nanowire. Bit-error-rate measurements show an average of 1.7dB improvement in receiver sensitivity after the regeneration.......We successfully demonstrate all-optical regeneration of a 40 Gbit/s signal based on cross-phase modulation in a silicon nanowire. Bit-error-rate measurements show an average of 1.7dB improvement in receiver sensitivity after the regeneration....

  14. A tunable narrow-line-width multi-wavelength Er-doped fiber laser based on a high birefringence fiber ring mirror and an auto-tracking filter

    Science.gov (United States)

    Jia, Xiu-jie; Liu, Yan-ge; Si, Li-bin; Guo, Zhan-cheng; Fu, Sheng-gui; Kai, Gui-yun; Dong, Xiao-yi

    2008-01-01

    A novel multi-wavelength erbium-doped fiber laser operating in C-band is proposed and successfully demonstrated. The wavelength interval between the wavelengths is about 0.22 nm. The 3 dB bandwidth of the laser is about 0.012 nm, and the output power reaches 4.8 mW. By using a high birefringence fiber ring mirror (HiBi-FLM) and a tunable FBG, the laser realizes switchable and tunable characteristic. The mode hopping can be effectively prevented. Moreover, this laser can improve wavelength stability significantly by taking advantage of an un-pumped Er3+-doped fiber at the standing-wave section. The laser can operate in stable narrow-line-width with single-, dual-wavelength, and unstable triple-wavelength output at room temperature.

  15. Surface topography acquisition method for double-sided near-right-angle structured surfaces based on dual-probe wavelength scanning interferometry.

    Science.gov (United States)

    Zhang, Tao; Gao, Feng; Jiang, Xiangqian

    2017-10-02

    This paper proposes an approach to measure double-sided near-right-angle structured surfaces based on dual-probe wavelength scanning interferometry (DPWSI). The principle and mathematical model is discussed and the measurement system is calibrated with a combination of standard step-height samples for both probes vertical calibrations and a specially designed calibration artefact for building up the space coordinate relationship of the dual-probe measurement system. The topography of the specially designed artefact is acquired by combining the measurement results with white light scanning interferometer (WLSI) and scanning electron microscope (SEM) for reference. The relative location of the two probes is then determined with 3D registration algorithm. Experimental validation of the approach is provided and the results show that the method is able to measure double-sided near-right-angle structured surfaces with nanometer vertical resolution and micrometer lateral resolution.

  16. Detector for the FSD Fourier-diffractometer based on ZnS(Ag)/6LiF scintillation screen and wavelength shifting fibers readout

    International Nuclear Information System (INIS)

    Kuz'min, E.S.; Balagurov, A.M.; Bokuchava, G.D.; Zhuk, V.V.; Kudryashev, V.A.; Bulkin, A.P.; Trunov, V.A.

    2001-01-01

    At the IBR-2 pulsed reactor (FLNP, JINR, Dubna), a specialized time-of-flight instrument Fourier-Stress-Diffractometer (FSD) intended for the measurement of internal stresses in bulk samples by using high-resolution neutron diffraction is under construction. One of the main components of the diffractometer is a new-type detector with combined electronic - geometrical focusing uniting a large solid angle and a small geometry contribution to the instrumental resolution. The first two modules of the detector, based on scintillation screen ZnS(Ag)/ 6 LiF with wavelength shifting fibers readout have been developed and tested. The design of the detector and associated electronics are described. The method of time focusing surface approximation, using the screen flexibility is proposed. Characteristics of the tested modules in comparison with a detector of the previous generation are presented and advantages of the new detector design for high-resolution diffractometry are discussed

  17. Radiation defects in electron-irradiated InP crystals

    Energy Technology Data Exchange (ETDEWEB)

    Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P. (AN Ukrainskoj SSR, Kiev. Inst. Yadernykh Issledovanij)

    1982-06-16

    The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed.

  18. InP Devices For Millimeter-Wave Monolithic Circuits

    Science.gov (United States)

    Binari, S. C.; Neidert, R. E.; Dietrich, H. B.

    1989-11-01

    High efficiency, mm-wave operation has been obtained from lateral transferred-electron devices (TEDs) designed with a high resistivity region located near the cathode contact. At 29.9 GHz, a CW power output of 29.1 mW with a conversion efficiency of 6.7% has been achieved with cavity-tuned discrete devices. This result represents the highest power output and efficiency of a lateral TED in this frequency range. The lateral devices also had a CW power output of 0.4 mW at 98.5 GHz and 0.9 mW at 75.2 GHz. In addition, a monolithic oscillator incorporating the lateral TED has been demonstrated at 79.9 GHz. InP Schottky-barrier diodes have been fabricated using selective MeV ion implantation into semi-insulating InP substrates. Using Si implantation with energies of up to 6.0 MeV, n+ layers as deep as 3 μm with peak carrier concentrations of 2 x 1018 cm-3 have been obtained. These devices have been evaluated as mixers and detectors at 94 GHz and have demonstrated a conversion loss of 7.6 dB and a zero-bias detector sensitivity as high as 400 mV/mW.

  19. Dual-drive Mach-Zehnder modulator-based reconfigurable and transparent spectral conversion for dense wavelength division multiplexing transmissions

    Science.gov (United States)

    Mao, Mingzhi; Qian, Chen; Cao, Bingyao; Zhang, Qianwu; Song, Yingxiong; Wang, Min

    2017-09-01

    A digital signal process enabled dual-drive Mach-Zehnder modulator (DD-MZM)-based spectral converter is proposed and extensively investigated to realize dynamically reconfigurable and high transparent spectral conversion. As another important innovation point of the paper, to optimize the converter performance, the optimum operation conditions of the proposed converter are deduced, statistically simulated, and experimentally verified. The optimum conditions supported-converter performances are verified by detail numerical simulations and experiments in intensity-modulation and direct-detection-based network in terms of frequency detuning range-dependent conversion efficiency, strict operation transparency for user signal characteristics, impact of parasitic components on the conversion performance, as well as the converted component waveform are almost nondistortion. It is also found that the converter has the high robustness to the input signal power, optical signal-to-noise ratio variations, extinction ratio, and driving signal frequency.

  20. A compact multi-wavelength optoacoustic system based on high-power diode lasers for characterization of double-walled carbon nanotubes (DWCNTs) for biomedical applications

    Science.gov (United States)

    Leggio, Luca; de Varona, Omar; Escudero, Pedro; Carpintero del Barrio, Guillermo; Osiński, Marek; Lamela Rivera, Horacio

    2015-06-01

    During the last decade, Optoacoustic Imaging (OAI), or Optoacoustic Tomography (OAT), has evolved as a novel imaging technique based on the generation of ultrasound waves with laser light. OAI may become a valid alternative to techniques currently used for the detection of diseases at their early stages. It has been shown that OAI combines the high contrast of optical imaging techniques with high spatial resolution of ultrasound systems in deep tissues. In this way, the use of nontoxic biodegradable contrast agents that mark the presence of diseases in near-infrared (NIR) wavelengths range (0.75-1.4 um) has been considered. The presence of carcinomas and harmful microorganisms can be revealed by means of the fluorescence effect exhibited by biopolymer nanoparticles. A different approach is to use carbon nanotubes (CNTs) which are a contrast agent in NIR range due to their absorption characteristics in the range between 800 to 1200 nm. We report a multi-wavelength (870 and 905 nm) laser diode-based optoacoustic (OA) system generating ultrasound signals from a double-walled carbon nanotubes (DWCNTs) solution arranged inside a tissue-like phantom, mimicking the scattering of a biological soft tissue. Optoacoustic signals obtained with DWCNTs inclusions within a tissue-like phantom are compared with the case of ink-filled inclusions, with the aim to assess their absorption. These measurements are done at both 870 and 905 nm, by using high power laser diodes as light sources. The results show that the absorption is relatively high when the inclusion is filled with ink and appreciable with DWCNTs.

  1. Multi-wavelength spectrophotometric determination of acidity constant of some newly synthesized Schiff bases and their QSPR study

    Science.gov (United States)

    Hemmateenejad, Bahram; Emami, Leila; Sharghi, Hashem

    2010-01-01

    The acidity constants of some newly synthesized Schiff base derivatives were determined by hard-model based multivariate data analysis of the spectrophotometric data in the course of pH-metric titration in 50% (v/v) methanol-water binary solvent. The employed data analysis method was also able to extract the pure spectra and pH-dependent concentration profiles of the acid-base species. The molecules that possess different substituents (both electron donating and withdrawing) on the ortho-, meta- and para-positions of one of the phenyl ring showed variable acidity constants ranging from 8.77 to 11.07 whereas the parent molecule had an acidity constant of 10.25. To investigate the quantitative effects of changing of substitution pattern on the acidity constant, a quantitative structure-property relation analysis was conducted using substituent constants and molecular descriptor. Some models with high statistical quality (measured by cross-validation Q2) were obtained. It was found that the acidity constant of the studied molecules in the methanol-water mixed solvent not only is affected by electronic features of the solutes but also by the lipophilic interaction between methanol part of solvent and the deprotonated solutes.

  2. Segregation of antimony in InP in MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Weeke, Stefan

    2008-07-01

    In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

  3. Segregation of antimony in InP in MOVPE

    International Nuclear Information System (INIS)

    Weeke, Stefan

    2008-01-01

    In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

  4. Damage formation and annealing in InP due to swift heavy ions

    International Nuclear Information System (INIS)

    Kamarou, A.; Wesch, W.; Wendler, E.; Klaumuenzer, S.

    2004-01-01

    Virgin and pre-damaged InP samples were irradiated at room temperature (RT) and at liquid nitrogen temperature (LNT) with different fluences of 140 MeV Kr, 390 MeV Xe and 600 MeV Au ions. The pre-damaging was performed with 600 keV Ge ions at LNT to obtain different damage levels. The samples were analysed by means of Rutherford backscattering spectrometry (RBS) in random and channelling geometry. A relatively weak damage accumulation in virgin InP and a very significant defect annealing in pre-damaged InP occurs due to 140 MeV Kr irradiation. The damaging of virgin InP with 390 MeV Xe and 600 MeV Au is much more efficient in comparison with that of 140 MeV Kr. Further, annealing of the pre-damaged InP due to 390 MeV Xe irradiation is hardly visible. At LNT InP appears to be much more radiation-resistant to swift heavy ion (SHI) irradiation than at RT. Our results show that during SHI irradiation of InP both damage formation and damage annealing occur simultaneously. Whether the first or the second one plays a more important role depends on the SHI mass and energy

  5. Next generation DIRCM for 2.1-2.3 micron wavelength based on direct-diode GaSb technology

    Science.gov (United States)

    Dvinelis, Edgaras; Naujokaitė, Greta; Greibus, Mindaugas; Trinkūnas, Augustinas; Vizbaras, Kristijonas; Vizbaras, Augustinas

    2018-02-01

    Continuous advances in low-cost MANPAD heat-seeking missile technology over the past 50 years remains the number one hostile threat to airborne platforms globally responsible for over 60 % of casualties. Laser based directional countermeasure (DIRCM) technology have been deployed to counter the threat. Ideally, a laser based DIRCM system must involve a number of lasers emitting at different spectral bands mimicking the spectral signature of the airborne platform. Up to now, near and mid infrared spectral bands have been covered with semiconductor laser technology and only SWIR band remained with bulky fiber laser technology. Recent technology developments on direct-diode GaSb laser technology at Brolis Semiconductors offer a replacement for the fiber laser source leading to significant improvements by few orders of magnitude in weight, footprint, efficiency and cost. We demonstrate that with careful engineering, several multimode emitters can be combined to provide a directional laser beam with radiant intensity from 10 kW/sr to 60 kW/sr in an ultra-compact hermetic package with weight < 30 g and overall efficiency of 15 % in the 2.1- 2.3 micron spectral band offering 150 times improvement in efficiency and reduction in footprint. We will discuss present results, challenges and future developments for such next-generation integrated direct diode DIRCM modules for SWIR band.

  6. Radioanalytical center of INP AS RUz

    International Nuclear Information System (INIS)

    Kist, A.A.; Bakiev, S.A.; Danilova, E.A.; Radyuk, R.I.; Rakhmanov, J.; Sadikov, I.I.; Salikhbaev, U.S.; Yuldashev, B.S.

    2004-01-01

    Full text: In the Institute of Nuclear Physics of the Academy of Sciences of Uzbekistan in frames of the 'Enhanced nuclear techniques for materials identification' STCU project, the Radioanalytical Center (RAC) aiming in development and use of nuclear-analytical and radiometric methods for analysis of various objects as well as for prevention of illicit trafficking of radioactive and nuclear materials and dual use commodities is created. In order to locate the RAC the Institute has allocated 10 premises including specialized ones. Technological equipment (boxes, exhaust hoods) was reconstructed; repair works and furnishing of laboratory premises was conducted. The sanitary certificate permitting conduction of work with ionizing radiation sources was received. Considering tasks are to be solved by this Center, technical and human resources capabilities of the Institute the following major analytical method were selected: 1. Neutron activation analysis (instrumental and radiochemical) 2. x-ray fluorescence analysis (XRF) 3. radiometric method with registration of natural (γ , α , and β ) activity of samples. The analysis objects are metals and alloys, minerals and ores, hydrogeological samples, technological products, soils, fertilizers, biological samples (plants, human bio substrates), foodstuff, water, sediments, construction materials, as well as materials of unknown composition, origin and purpose. The following equipment was purchased in frames of the project: 1. Ge-detector based high resolution gamma-spectrometers - 4 pieces; and Si(Li)-detector based high resolution XRF-spectrometer - 2 pieces including DSA-1000 analyzers and Genie-2000 spectra analysis software. 2. Alpha-beta counter 'Solo'. 3. Computers and office equipment. 4. Auxiliary laboratory equipment required for sample treatment, pH-meters, dosimeters and others. Mounting and adjusting of the equipment as well as personnel training was carried out. At present, development of a complex of

  7. Three-Stage InP Submillimeter-Wave MMIC Amplifier

    Science.gov (United States)

    Pukala, David; Samoska, Lorene; Man, King; Gaier, Todd; Deal, William; Lai, Richard; Mei, Gerry; Makishi, Stella

    2008-01-01

    A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

  8. Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

    KAUST Repository

    Zheng, Maxwell

    2015-08-25

    The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

  9. Performance of asynchronous fiber-optic code division multiple access system based on three-dimensional wavelength/time/space codes and its link analysis.

    Science.gov (United States)

    Singh, Jaswinder

    2010-03-10

    A novel family of three-dimensional (3-D) wavelength/time/space codes for asynchronous optical code-division-multiple-access (CDMA) systems with "zero" off-peak autocorrelation and "unity" cross correlation is reported. Antipodal signaling and differential detection is employed in the system. A maximum of [(W x T+1) x W] codes are generated for unity cross correlation, where W and T are the number of wavelengths and time chips used in the code and are prime. The conditions for violation of the cross-correlation constraint are discussed. The expressions for number of generated codes are determined for various code dimensions. It is found that the maximum number of codes are generated for S systems. The codes have a code-set-size to code-size ratio greater than W/S. For instance, with a code size of 2065 (59 x 7 x 5), a total of 12,213 users can be supported, and 130 simultaneous users at a bit-error rate (BER) of 10(-9). An arrayed-waveguide-grating-based reconfigurable encoder/decoder design for 2-D implementation for the 3-D codes is presented so that the need for multiple star couplers and fiber ribbons is eliminated. The hardware requirements of the coders used for various modulation/detection schemes are given. The effect of insertion loss in the coders is shown to be significantly reduced with loss compensation by using an amplifier after encoding. An optical CDMA system for four users is simulated and the results presented show the improvement in performance with the use of loss compensation.

  10. [Managment system in safety and health at work organization. An Italian example in public sector: Inps].

    Science.gov (United States)

    Di Loreto, G; Felicioli, G

    2010-01-01

    The Istituto Nazionale della Previdenza Sociale (Inps) is one of the biggest Public Sector organizations in Italy; about 30.000 people work in his structures. Fifteen years ago, Inps launched a long term project with the objective to create a complex and efficient safety and health at work organization. Italian law contemplates a specific kind of physician working on safety and health at work, called "Medico competente", and 85 Inps's physicians work also as "Medico competente". This work describes how IT improved coordination and efficiency in this occupational health's management system.

  11. All-optical signal processing using InP photonic-crystal nanocavity switches

    DEFF Research Database (Denmark)

    Yu, Yi; Vukovic, Dragana; Heuck, Mikkel

    2014-01-01

    In this paper, we present recent progress in experimental characterization of InP photonic-crystal nanocavity switches. Pump-probe measurements on an InP PhC H0 cavity show large-contrast ultrafast switching at low pulse energy. At large pulse energies, a large resonance shift passing across...... for the joint effects of fast carrier diffusion, slow surface and bulk recombination. Utilizin g the simple InP PhC nanocavity structure, we successfully dem onstrate 10-Gb/s RZ- OOK all-optical modulation with low energy consumption....

  12. Systems and methods for advanced ultra-high-performance InP solar cells

    Science.gov (United States)

    Wanlass, Mark

    2017-03-07

    Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

  13. Wavelength conversion technology

    DEFF Research Database (Denmark)

    Stubkjær, Kristian

    1998-01-01

    Optical wavelength conversion is currently attracting much interest. This is because it enables full flexibility and eases management of WDM fibre networks. The tutorial will review existing and potential application areas. Examples of node architectures and network demonstrators that use wavelen...

  14. InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range.

    Science.gov (United States)

    Fonseka, H A; Ameruddin, A S; Caroff, P; Tedeschi, D; De Luca, M; Mura, F; Guo, Y; Lysevych, M; Wang, F; Tan, H H; Polimeni, A; Jagadish, C

    2017-09-21

    The usability and tunability of the essential InP-InGaAs material combination in nanowire-based quantum wells (QWs) are assessed. The wurtzite phase core-multi-shell InP-InGaAs-InP nanowire QWs are characterised using cross-section transmission electron microscopy and photoluminescence measurements. The InP-InGaAs direct interface is found to be sharp while the InGaAs-InP inverted interface is more diffused, in agreement with their planar counterpart. Bright emission is observed from the single nanowires containing the QWs at room temperature, with no emission from the InP core or outer barrier. The tunability of the QW emission wavelength in the 1.3-1.55 μm communication wavelength range is demonstrated by varying the QW thickness and in the 1.3 μm range by varying the composition. The experiments are supported by simulation of the emission wavelength of the wurtzite phase InP-InGaAs QWs in the thickness range considered. The radial heterostructure is further extended to design multiple QWs with bright emission, therefore establishing the capability of this material system for nanowire based optical devices for communication applications.

  15. Correction for the Hematocrit Bias in Dried Blood Spot Analysis Using a Nondestructive, Single-Wavelength Reflectance-Based Hematocrit Prediction Method.

    Science.gov (United States)

    Capiau, Sara; Wilk, Leah S; De Kesel, Pieter M M; Aalders, Maurice C G; Stove, Christophe P

    2018-02-06

    The hematocrit (Hct) effect is one of the most important hurdles currently preventing more widespread implementation of quantitative dried blood spot (DBS) analysis in a routine context. Indeed, the Hct may affect both the accuracy of DBS methods as well as the interpretation of DBS-based results. We previously developed a method to determine the Hct of a DBS based on its hemoglobin content using noncontact diffuse reflectance spectroscopy. Despite the ease with which the analysis can be performed (i.e., mere scanning of the DBS) and the good results that were obtained, the method did require a complicated algorithm to derive the total hemoglobin content from the DBS's reflectance spectrum. As the total hemoglobin was calculated as the sum of oxyhemoglobin, methemoglobin, and hemichrome, the three main hemoglobin derivatives formed in DBS upon aging, the reflectance spectrum needed to be unmixed to determine the quantity of each of these derivatives. We now simplified the method by only using the reflectance at a single wavelength, located at a quasi-isosbestic point in the reflectance curve. At this wavelength, assuming 1-to-1 stoichiometry of the aging reaction, the reflectance is insensitive to the hemoglobin degradation and only scales with the total amount of hemoglobin and, hence, the Hct. This simplified method was successfully validated. At each quality control level as well as at the limits of quantitation (i.e., 0.20 and 0.67) bias, intra- and interday imprecision were within 10%. Method reproducibility was excellent based on incurred sample reanalysis and surpassed the reproducibility of the original method. Furthermore, the influence of the volume spotted, the measurement location within the spot, as well as storage time and temperature were evaluated, showing no relevant impact of these parameters. Application to 233 patient samples revealed a good correlation between the Hct determined on whole blood and the predicted Hct determined on venous DBS. The

  16. Modelling of OPNMR phenomena using photon energy-dependent 〈Sz〉 in GaAs and InP

    Science.gov (United States)

    Wheeler, Dustin D.; Willmering, Matthew M.; Sesti, Erika L.; Pan, Xingyuan; Saha, Dipta; Stanton, Christopher J.; Hayes, Sophia E.

    2016-12-01

    We have modified the model for optically-pumped NMR (OPNMR) to incorporate a revised expression for the expectation value of the z-projection of the electron spin, 〈Sz 〉 and apply this model to both bulk GaAs and a new material, InP. This expression includes the photon energy dependence of the electron polarization when optically pumping direct-gap semiconductors in excess of the bandgap energy, Eg . Rather than using a fixed value arising from coefficients (the matrix elements) for the optical transitions at the k = 0 bandedge, we define a new parameter, Sopt (Eph) . Incorporating this revised element into the expression for 〈Sz 〉 , we have simulated the photon energy dependence of the OPNMR signals from bulk semi-insulating GaAs and semi-insulating InP. In earlier work, we matched calculations of electron spin polarization (alone) to features in a plot of OPNMR signal intensity versus photon energy for optical pumping (Ramaswamy et al., 2010). By incorporating an electron spin polarization which varies with pump wavelength into the penetration depth model of OPNMR signal, we are able to model features in both III-V semiconductors. The agreement between the OPNMR data and the corresponding model demonstrates that fluctuations in the OPNMR intensity have particular sensitivity to light hole-to-conduction band transitions in bulk systems. We provide detailed plots of the theoretical predictions for optical pumping transition probabilities with circularly-polarized light for both helicities of light, broken down into illustrative plots of optical magnetoabsorption and spin polarization, shown separately for heavy-hole and light-hole transitions. These plots serve as an effective roadmap of transitions, which are helpful to other researchers investigating optical pumping effects.

  17. Modelling of OPNMR phenomena using photon energy-dependent 〈Sz〉 in GaAs and InP.

    Science.gov (United States)

    Wheeler, Dustin D; Willmering, Matthew M; Sesti, Erika L; Pan, Xingyuan; Saha, Dipta; Stanton, Christopher J; Hayes, Sophia E

    2016-12-01

    We have modified the model for optically-pumped NMR (OPNMR) to incorporate a revised expression for the expectation value of the z-projection of the electron spin, 〈S z 〉 and apply this model to both bulk GaAs and a new material, InP. This expression includes the photon energy dependence of the electron polarization when optically pumping direct-gap semiconductors in excess of the bandgap energy, E g . Rather than using a fixed value arising from coefficients (the matrix elements) for the optical transitions at the k=0 bandedge, we define a new parameter, S opt (E ph ). Incorporating this revised element into the expression for 〈S z 〉, we have simulated the photon energy dependence of the OPNMR signals from bulk semi-insulating GaAs and semi-insulating InP. In earlier work, we matched calculations of electron spin polarization (alone) to features in a plot of OPNMR signal intensity versus photon energy for optical pumping (Ramaswamy et al., 2010). By incorporating an electron spin polarization which varies with pump wavelength into the penetration depth model of OPNMR signal, we are able to model features in both III-V semiconductors. The agreement between the OPNMR data and the corresponding model demonstrates that fluctuations in the OPNMR intensity have particular sensitivity to light hole-to-conduction band transitions in bulk systems. We provide detailed plots of the theoretical predictions for optical pumping transition probabilities with circularly-polarized light for both helicities of light, broken down into illustrative plots of optical magnetoabsorption and spin polarization, shown separately for heavy-hole and light-hole transitions. These plots serve as an effective roadmap of transitions, which are helpful to other researchers investigating optical pumping effects. Copyright © 2016 Elsevier Inc. All rights reserved.

  18. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    International Nuclear Information System (INIS)

    Bierwagen, O.

    2007-01-01

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  19. Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells

    Science.gov (United States)

    Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

    1994-01-01

    InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.

  20. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    Energy Technology Data Exchange (ETDEWEB)

    Bierwagen, O.

    2007-12-20

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  1. Study by AES, EELS Spectroscopy of electron Irradiation on InP and InPO4/InP in comparison with Monte Carlo simulation

    International Nuclear Information System (INIS)

    Lounis, Z; Bouslama, M; Hamaida, K; Abdellaoui, A; Ouerdane, A; Ghaffour, M; Berrouachedi, N; Jardin, C

    2012-01-01

    We give the great interest to characterise the InP and InPO 4 /InP submitted to electron beam irradiation owing to the Auger Electron Spectroscopy (AES) associated to both methods Electron Energy Loss Spectroscopy (EELS). The incident electron produces breaking of (In-P) chemical bonds. The electron beam even acts to stimulate oxidation of InP surface involving on the top layers. Other, the oxide InPO 4 developed on InP does appear very sensitive to the irradiation due to electron beam shown by the monitoring of EELS spectra recorded versus the irradiated times of the surface. There appears a new oxide thought to be In 2 O 3 . We give the simulation methods Casino (Carlo simulation of electron trajectory in solids) for determination with accuracy the loss energy of backscattered electrons and compared with reports results have been obtained with EELS Spectroscopy. These techniques of spectroscopy alone do not be able to verify the affected depth during interaction process. So, using this simulation method, we determine the interaction of electrons in the matter.

  2. Passively synchronized dual-wavelength Q-switched lasers

    DEFF Research Database (Denmark)

    Janousek, Jiri; Tidemand-Lichtenberg, Peter; Mortensen, Jesper Liltorp

    We present a simple and efficient way of generating synchronized Q-switched pulses at wavelengths hundreds of nanometers apart. This principle can result in new pulsed all-solid-state light sources at new wavelengths based on SFG.......We present a simple and efficient way of generating synchronized Q-switched pulses at wavelengths hundreds of nanometers apart. This principle can result in new pulsed all-solid-state light sources at new wavelengths based on SFG....

  3. INP studies for a Tau-Charm Factory

    International Nuclear Information System (INIS)

    Skrinsky, A.

    1994-01-01

    This paper presents the results of studies undertaken at INP of options for a Tau Charm Factory. Three different beam options have been studied. First is a 'round beam option', allowing axially symmetric beams which yield high tau-pair productivity. The second option involves monochromatic beams, which enhances productivity for narrow c bar c states, gives good tau pair productions in a clean manner, and has a good resonant-to-nonresonant ratio. The third option allows longitudinal polarization, should it prove to be interesting. It is an easy option to implement because it only involves polarized electrons. Work on some of these options is described in terms of experiments on the VEPP-2 device

  4. InAs nanowire formation on InP(001)

    International Nuclear Information System (INIS)

    Parry, H. J.; Ashwin, M. J.; Jones, T. S.

    2006-01-01

    The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400-480 deg. C, and also following high temperature annealing (480 deg. C) after deposition at 400 deg. C. The wires show preferential orientation along and often exhibit pronounced serpentine behavior due to the presence of kinks, an effect that is reduced at increasing growth temperature. The results suggest that the serpentine behavior is related to the degree of initial surface order. Kinks in the wires appear to act as nucleation centers for In adatoms migrating along the wires during annealing, leading to the coexistence of large three-dimensional islands

  5. Sulfur as a surface passivation for InP

    Science.gov (United States)

    Iyer, R.; Chang, R. R.; Lile, D. L.

    1988-01-01

    The use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated. Results of high-frequency and quasi-static capacitance-voltage measurements, as well as enhancement mode insulated gate field-effect transistor (FET) transductance and drain current stability studies, all support the efficacy of this approach for metal-insulator-semiconductor application of this semiconductor. In particular, surface state values in the range of 10 to the 10th to a few 10 to the 11th/sq cm per eV and enhancement mode FET drain current drifts of less than 5 percent over a 12 h test period were measured.

  6. Experimental studies on the surface confined quiescent plasma at INPE

    International Nuclear Information System (INIS)

    Ferreira, J.L.; Ferreira, J.G.; Sandonato, G.M.; Alves, M.V.; Ludwig, G.O.; Montes, A.

    1988-06-01

    Quiescent plasma machines are being used in several experiments at the Associated Plasma Laboratory in INPE. The research activities comprises particle simulation studies on ion acoustic double Layers, and studies on the plasma production and loss in surface confined magnetic multidipole thermionic discharges. Recent results from these studies have shown a non-maxwellian plasma formed in most of the discharge conditions. The plasma leakage through the multidipole fields shows an anomalous diffusion process driven by ion acoustic turbulence in the magnetic sheath. The information derived from these studies are being used in the construction and characterization of ion sources for shallow ion implantation in semiconductors, in ion thruster for space propulsion and in the development of powerful ion sources for future use in neutral beam injection systems. (author) [pt

  7. Experimental studies on the surface confined quiescent plasma at INPE

    International Nuclear Information System (INIS)

    Ferreira, J.L.; Ferreira, J.G.; Sandonato, G.M.; Alves, M.V.; Ludwig, G.O.; Montes, A.

    1988-01-01

    The quiescent plasma machines used in several experiments at the Associated Plasma Laboratory in INPE are presented. The research activities comprise particle simulation studies on ion acoustic double layers, and studies on the plasma production and loss in surface confined magnetic multidipole thermionic discharges. Recent results from these studies have shown a non-maxwellian plasma formed in most of the discharge conditions. The plasma leakage through the multidipole fields shows an anomalous diffusion process driven by ion acoustic turbulence in the magnetic sheath. The information derived from these studies are being used in the construction and characterization of ion sources for shallow ion implantation in semiconductors, in ion thruster for space propulsion and in the development of powerful ion sources for future use in neutral beam injection systems. (author) [pt

  8. Fabrication and characterization of InP fresnel microlenses

    International Nuclear Information System (INIS)

    Diadiuk, V.; Walpole, J.N.; Liau, Z.L.

    1987-01-01

    Since diode lasers typically have a beam divergence of a few tens of degrees, collimating the laser outputs leads to greatly far-field patterns, which, in turn translates into more power in the main lobe of the combined output. Achieving this collimation in the case of a diode laser array, with its small device-to-device distance, requires an array of similarly spaced microlenses with very short focal length, small diameter and small F number. In this paper, the authors describe the fabrication and performance of a Fresnel microlens array etched directly in InP wafers; these microlenses have been used successfully to collimate the output of GainAsP/InP buried-heterostructure (BH) diode lasers

  9. A 12 GHz wavelength spacing multi-wavelength laser source for wireless communication systems

    Science.gov (United States)

    Peng, P. C.; Shiu, R. K.; Bitew, M. A.; Chang, T. L.; Lai, C. H.; Junior, J. I.

    2017-08-01

    This paper presents a multi-wavelength laser source with 12 GHz wavelength spacing based on a single distributed feedback laser. A light wave generated from the distributed feedback laser is fed into a frequency shifter loop consisting of 50:50 coupler, dual-parallel Mach-Zehnder modulator, optical amplifier, optical filter, and polarization controller. The frequency of the input wavelength is shifted and then re-injected into the frequency shifter loop. By re-injecting the shifted wavelengths multiple times, we have generated 84 optical carriers with 12 GHz wavelength spacing and stable output power. For each channel, two wavelengths are modulated by a wireless data using the phase modulator and transmitted through a 25 km single mode fiber. In contrast to previously developed schemes, the proposed laser source does not incur DC bias drift problem. Moreover, it is a good candidate for radio-over-fiber systems to support multiple users using a single distributed feedback laser.

  10. Porous silicon-VO{sub 2} based hybrids as possible optical temperature sensor: Wavelength-dependent optical switching from visible to near-infrared range

    Energy Technology Data Exchange (ETDEWEB)

    Antunez, E. E.; Salazar-Kuri, U.; Estevez, J. O.; Basurto, M. A.; Agarwal, V., E-mail: vagarwal@uaem.mx [Centro de Investigación en Ingeniería y Ciencias Aplicadas, Instituto de Investigación en Ciencias Básicas y Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Mor. 62209 (Mexico); Campos, J. [Instituto de Energías Renovables, UNAM, Priv. Xochicalco S/N, Temixco, Mor. 62580 (Mexico); Jiménez Sandoval, S. [Laboratorio de Investigación en Materiales, Centro de Investigación y estudios Avanzados del Instituto Politécnico Nacional, Unidad Querétaro, Qro. 76001 (Mexico)

    2015-10-07

    Morphological properties of thermochromic VO{sub 2}—porous silicon based hybrids reveal the growth of well-crystalized nanometer-scale features of VO{sub 2} as compared with typical submicron granular structure obtained in thin films deposited on flat substrates. Structural characterization performed as a function of temperature via grazing incidence X-ray diffraction and micro-Raman demonstrate reversible semiconductor-metal transition of the hybrid, changing from a low-temperature monoclinic VO{sub 2}(M) to a high-temperature tetragonal rutile VO{sub 2}(R) crystalline structure, coupled with a decrease in phase transition temperature. Effective optical response studied in terms of red/blue shift of the reflectance spectra results in a wavelength-dependent optical switching with temperature. As compared to VO{sub 2} film over crystalline silicon substrate, the hybrid structure is found to demonstrate up to 3-fold increase in the change of reflectivity with temperature, an enlarged hysteresis loop and a wider operational window for its potential application as an optical temperature sensor. Such silicon based hybrids represent an exciting class of functional materials to display thermally triggered optical switching culminated by the characteristics of each of the constituent blocks as well as device compatibility with standard integrated circuit technology.

  11. A quasi-three-level dual-wavelength thin-disk laser at 1024 and 1030 nm based on a diode-pumped Yb:YAG crystal

    International Nuclear Information System (INIS)

    Sun, G C; Li, Y D; Zhao, M; Chen, X Y; Wang, J B; Chen, G B

    2013-01-01

    A diode-end-pumped Yb:YAG dual-wavelength continuous-wave (cw) laser that generates simultaneous laser action at wavelengths of 1024 and 1030 nm is demonstrated for the first time. A total output power of 897 mW for the dual-wavelength was achieved at an incident pump power of 17.8 W. Furthermore, intracavity sum-frequency mixing at 1024 and 1030 nm was then realized in an LBO crystal to reach the green range. We obtained a total cw output power of 85 mW at 513.5 nm. (paper)

  12. Wavelength sweepable laser source

    DEFF Research Database (Denmark)

    2014-01-01

    Wavelength sweepable laser source is disclosed, wherein the laser source is a semiconductor laser source adapted for generating laser light at a lasing wavelength. The laser source comprises a substrate, a first reflector, and a second reflector. The first and second reflector together defines...... and having a rest position, the second reflector and suspension together defining a microelectromechanical MEMS oscillator. The MEMS oscillator has a resonance frequency and is adapted for oscillating the second reflector on either side of the rest position.; The laser source further comprises electrical...... connections adapted for applying an electric field to the MEMS oscillator. Furthermore, a laser source system and a method of use of the laser source are disclosed....

  13. Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces

    International Nuclear Information System (INIS)

    Williams, R.S.

    1982-01-01

    Argon bombardment damage to (100) surfaces of Si, GaAs, and InP for sputter ion-gun potentials of 1, 2, and 3 kilovolts was studied using Rutherford backscattering. Initial damage rates and saturation damage levels were determined. Bombardment damage sensitivity increased for the sequence Si, GaAs, and InP. Saturation damage levels for Si and GaAs correspond reasonably to LSS projected range plus standard deviation estimates; damage to InP exceeded this level significantly. For an ion-gun potential of 3 keV, the initial sputter yield of P from an InP surface exceeded the sputter yield of In by four atoms per incident Ar projectile. (author)

  14. Channeling study of laser-induced defect generation in InP and InAs

    International Nuclear Information System (INIS)

    Burdel', K.K.; Kashkarov, P.K.; Timoshenko, V.Yu.; Chechenin, N.G.

    1992-01-01

    Damage production in InP and InAs single crystals induced by a ruby-laser pulse irradiation with τ p =20 ms in the energy density region W=0.05-1.0 J/cm 2 is studied by the channeling and Rutherford backscattering techniques. The defect generation threshold was determined to be equal to 0.2 J/cm 2 and 0.55 J/cm 2 for InP and InAs crystals, respectively. Stoichiometric defects in InP crystals were observed at W>=0.5 J/cm 2 . The temperature fields in InP and InAs under laser irradiation were calculated. The experimental observations are considered as a result of a selective evaporation of the components from the melt

  15. Control of persistent photoconductivity in nanostructured InP through morphology design

    International Nuclear Information System (INIS)

    Monaico, Ed; Postolache, V; Borodin, E; Lupan, O; Tiginyanu, I M; Ursaki, V V; Adelung, R; Nielsch, K

    2015-01-01

    In this paper, we show that long-duration-photoconductivity decay (LDPCD) and persistent photoconductivity (PPC) in porous InP structures fabricated by anodic etching of bulk substrates can be controlled through the modification of the sample morphology. Particularly, the PPC inherent at low temperatures to porous InP layers with the thickness of skeleton walls comparable with pore diameters is quenched in structures consisting of ultrathin walls produced at high anodization voltages. The relaxation of photoconductivity in bulk InP substrates, porous layers, and utrathin membranes is investigated as a function of temperature and excitation power density. The obtained results suggest that PPC in porous InP layers is due to porosity induced potential barriers which hinder the recombination of photoexcited carriers, while the photoconductivity relaxation processes in ultrathin membranes are governed by surface states. (paper)

  16. Electronic and magnetic properties of digitally Ti doped InP: A first principles study

    International Nuclear Information System (INIS)

    Rahman, Gul; Cho, Sunglae; Hong, Soon Cheol

    2008-01-01

    Using the full-potential linearized augmented plane wave method within the generalized gradient approximation, we study the electronic and the magnetic properties of digitally Ti doped InP. It is quite interesting that digitally Ti-doped InP system shows half metallic ferromagnetism even though both bulk zinc blende TiP and InP are paramagnetic. We also investigate the electronic and the magnetic properties as a function of spacer layer thickness. Their properties such as exchange coupling constant and atomic projected density of states are more or less independent of the InP thickness. Spin density contour maps indicate that the spin-polarization is confined within the TiP plane. The system may show a highly anisotropic property in spin-polarized transport. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. LETTER TO THE EDITOR: Surface passivation of (100) InP by organic thiols and polyimide as characterized by steady-state photoluminescence

    Science.gov (United States)

    Schvartzman, M.; Sidorov, V.; Ritter, D.; Paz, Y.

    2001-10-01

    A method for the passivation of indium phosphide, based on thiolated organic self-assembled monolayers (SAMs) that form highly ordered, close-packed structures on the semiconductor surface, is presented. It is shown that the intensity of steady-state photoluminescence (PL) of n-type InP wafers covered with the thiolated SAMs increases significantly (as much as 14-fold) upon their covering with the monolayers. The ease with which one can tailor the outer functional groups of the SAMs provides a way to connect this new class of passivators with standard encapsulators, such as polyimide. Indeed, the PL intensity of SAM-coated InP wafers was not altered upon their overcoating with polyimide, despite the high curing temperature of the polymer (200 °C).

  18. The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

    CERN Document Server

    Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

    1999-01-01

    Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

  19. Structural analysis of erbium {delta}-doped InP by OMVPE with RBS-channeling

    Energy Technology Data Exchange (ETDEWEB)

    Yuhara, Junji; Takeda, Hitoshi; Matsubara, Naoki; Tabuchi, Masao; Fujiwara, Yasufumi; Morita, Kenji; Takeda, Yoshikazu [Nagoya Univ. (Japan). School of Engineering

    1997-03-01

    We have determined the lattice location of Er in InP {delta}-doped by OMVPE with RBS-channeling. Er concentrations along the <001> and <011> directions are same as random yields, while a significant flux peaking effect is seen for the <111> direction. These data suggest that Er atoms occupy the site equivalent to the hexahedral site in InP lattice. (author)

  20. Ultra-Fast Low Energy Switching Using an InP Photonic Crystal H0 Nanocavity

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel

    2013-01-01

    Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting.......Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting....

  1. Direct analysis of intact biological macromolecules by low-energy, fiber-based femtosecond laser vaporization at 1042 nm wavelength with nanospray postionization mass spectrometry.

    Science.gov (United States)

    Shi, Fengjian; Flanigan, Paul M; Archer, Jieutonne J; Levis, Robert J

    2015-03-17

    A fiber-based laser with a pulse duration of 435 fs and a wavelength of 1042 nm was used to vaporize biological macromolecules intact from the condensed phase into the gas phase for nanospray postionization and mass analysis. Laser vaporization of dried standard protein samples from a glass substrate by 10 Hz bursts of 20 pulses having 10 μs pulse separation and energy resulted in signal comparable to a metal substrate. The protein signal observed from an aqueous droplet on a glass substrate was negligible compared to either a droplet on metal or a thin film on glass. The mass spectra generated from dried and aqueous protein samples by the low-energy, fiber laser were similar to the results from high-energy (500 μJ), 45-fs, 800-nm Ti:sapphire-based femtosecond laser electrospray mass spectrometry (LEMS) experiments, suggesting that the fiber-based femtosecond laser desorption mechanism involves a nonresonant, multiphoton process, rather than thermal- or photoacoustic-induced desorption. Direct analysis of whole blood performed without any pretreatment resulted in features corresponding to hemoglobin subunit-heme complex ions. The observation of intact molecular ions with low charge states from protein, and the tentatively assigned hemoglobin α subunit-heme complex from blood suggests that fiber-based femtosecond laser vaporization is a "soft" desorption source at a laser intensity of 2.39 × 10(12) W/cm(2). The low-energy, turnkey fiber laser demonstrates the potential of a more robust and affordable laser for femtosecond laser vaporization to deliver biological macromolecules into the gas phase for mass analysis.

  2. Rational Molecular Engineering of Indoline-Based D-A-π-A Organic Sensitizers for Long-Wavelength-Responsive Dye-Sensitized Solar Cells.

    Science.gov (United States)

    Zhang, Weiwei; Wu, Yongzhen; Zhu, Haibo; Chai, Qipeng; Liu, Jingchuan; Li, Hui; Song, Xiongrong; Zhu, Wei-Hong

    2015-12-09

    Indoline-based D-A-π-A organic sensitizers are promising candidates for highly efficient and long-term stable dye-sensitized solar cells (DSSCs). In order to further broaden the spectral response of the known indoline dye WS-2, we rationally engineer the molecular structure through enhancing the electron donor and extending the π-bridge, resulting in two novel indoline-based D-A-π-A organic sensitizers WS-92 and WS-95. By replacing the 4-methylphenyl group on the indoline donor of WS-2 with a more electron-rich carbazole unit, the intramolecular charge transfer (ICT) absorption band of dye WS-92 is slightly red-shifted from 550 nm (WS-2) to 554 nm (WS-92). In comparison, the incorporation of a larger π-bridge of cyclopentadithiophene (CPDT) unit in dye WS-95 not only greatly bathochromatically tunes the absorption band to 574 nm but also largely enhances the molar extinction coefficients (ε), thus dramatically improving the light-harvesting capability. Under the standard global AM 1.5 solar light condition, the photovoltaic performances of both organic dyes have been evaluated in DSSCs on the basis of the iodide/triiodide electrolyte without any coadsorbent or cosensitizer. The DSSCs based on WS-95 display better device performance with power conversion efficiency (η) of 7.69%. The additional coadsorbent in the dye bath of WS-95 does not improve the photovoltaic performance, indicative of its negligible dye aggregation, which can be rationalized by the grafted dioctyl chains on the CPDT unit. The cosensitization of WS-95 with a short absorption wavelength dye S2 enhances the IPCE and improves the η to 9.18%. Our results indicate that extending the π-spacer is more rational than enhancing the electron donor in terms of broadening the spectral response of indoline-based D-A-π-A organic sensitizers.

  3. Different growth regimes in InP nanowire growth mediated by Ag nanoparticles.

    Science.gov (United States)

    Oliveira, D S; Zavarize, M; Tizei, L H G; Walls, M; Ospina, C A; Iikawa, F; Ugarte, D; Cotta, M A

    2017-12-15

    We report on the existence of two different regimes in one-step Ag-seeded InP nanowire growth. The vapor-liquid-solid-mechanism is present at larger In precursor flows and temperatures, ∼500 °C, yielding high aspect ratio and pure wurtzite InP nanowires with a semi-spherical metal particle at the thin apex. Periodic diameter oscillations can be achieved under extreme In supersaturations at this temperature range, showing the presence of a liquid catalyst. However, under lower temperatures and In precursor flows, large diameter InP nanowires with mixed wurtzite/zincblende segments are obtained, similarly to In-assisted growth. Chemical composition analysis suggest that In-rich droplet formation is catalyzed at the substrate surface via Ag nanoparticles; this process might be facilitated by the sulfur contamination detected in these nanoparticles. Furthermore, part of the original Ag nanoparticle remains solid and is embedded inside the actual catalyst, providing an in situ method to switch growth mechanisms upon changing In precursor flow. Nevertheless, our Ag-seeded InP nanowires exhibit overall optical emission spectra consistent with the observed structural properties and similar to Au-catalyzed InP nanowires. We thus show that Ag nanoparticles may be a suitable replacement for Au in InP nanowire growth.

  4. Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction.

    Science.gov (United States)

    Kriegner, D; Wintersberger, E; Kawaguchi, K; Wallentin, J; Borgström, M T; Stangl, J

    2011-10-21

    High resolution x-ray diffraction is used to study the structural properties of the wurtzite polytype of InP nanowires. Wurtzite InP nanowires are grown by metal-organic vapor phase epitaxy using S-doping. From the evaluation of the Bragg peak position we determine the lattice parameters of the wurtzite InP nanowires. The unit cell dimensions are found to differ from the ones expected from geometric conversion of the cubic bulk InP lattice constant. The atomic distances along the c direction are increased whereas the atomic spacing in the a direction is reduced in comparison to the corresponding distances in the zinc-blende phase. Using core/shell nanowires with a thin core and thick nominally intrinsic shells we are able to determine the lattice parameters of wurtzite InP with a negligible influence of the S-doping due to the much larger volume in the shell. The determined material properties will enable the ab initio calculation of electronic and optical properties of wurtzite InP nanowires.

  5. Growth of semi-insulating InP through nuclear doping

    International Nuclear Information System (INIS)

    Aliyev, M.I; Rashidova, Sh.Sh; Huseynli, M.A.

    2012-01-01

    Full text : Semi-insulating semiconductors are widely used in so-called dielectronics. Dielectric devices have quick response, good frequency characteristics, a low noise level, low sensitivity to temperature changes, etc. One of the most promising semiconductor materials is InP. At present annealing and doping are commonly used techniques to grow semi-insulating InP. The aim of this work was to grow semi-insulating InP through nuclear doping (by irradiation with gamma-quanta). InP single crystals were obtained by Czochralski method. Specimens were irradiated with doses of 10kGr at room temperature. Electrical conductivity and Hall effect were measured before and after irradiation in the temperature range 77 to 320K. After irradiation reduction in electrical conductivity was observed. This fact can be associated with formation of M-centers in positively threefold charged states of vacancy and antisite defects. Under irradiation first Ini interstitial atoms and phosphorus vacancies form. Further, the Ini atoms occupy the phosphorus vacancies. As a result there appear InP antiste defects, which along with indium vacancies form V I nI n p + In p + + complexes of the acceptor type. These complexes turn out to be traps for charge carriers and electrical conductivity of irradiated InP are sharply reduced to semi-insulating specimens

  6. 1.0 MeV irradiation of OHMIC, MS, MIS contacts to InP

    International Nuclear Information System (INIS)

    Warren, C.E.; Wagner, B.F.; Anderson, W.A.

    1986-01-01

    The radiation effects of 1.0 MeV electrons with a dose of 10/sup 15/cm/sup -2/ to MS and MIS Schottky diodes on InP have been compared to the radiation effects of MIS diodes on GaAs and Si. The radiation effects to ohmic contacts were also investigated. The metal for the diodes on the InP was gold. Au/Ti/Al was used for the GaAs diodes and Cr for the silicon diodes. Oxide layers on InP were grown by anodization in 0.1 N KOH. Oxides to GaAs and Si were grown thermally. Ohmic contacts to InP were formed using AuGe/Ni and AuSn alloys, followed by annealing in N/sub 2//H/sub 2/ (85%/15%). Metal Semiconductor diodes on InP were found to be at least sensitive to the irradiation. The InP MS and MIS diodes showed only small changes in the current voltage (I-V) characteristic, whereas the GaAs and Si devices showed a decrease in reverse current after irradiation. The ohmic contact resistance was increased by a factor of 2 to 5 after irradiation

  7. A CLOUDINESS INDEX FOR TRANSITING EXOPLANETS BASED ON THE SODIUM AND POTASSIUM LINES: TENTATIVE EVIDENCE FOR HOTTER ATMOSPHERES BEING LESS CLOUDY AT VISIBLE WAVELENGTHS

    Energy Technology Data Exchange (ETDEWEB)

    Heng, Kevin, E-mail: kevin.heng@csh.unibe.ch [University of Bern, Center for Space and Habitability, Sidlerstrasse 5, CH-3012, Bern (Switzerland)

    2016-07-20

    We present a dimensionless index that quantifies the degree of cloudiness of the atmosphere of a transiting exoplanet. Our cloudiness index is based on measuring the transit radii associated with the line center and wing of the sodium or potassium line. In deriving this index, we revisited the algebraic formulae for inferring the isothermal pressure scale height from transit measurements. We demonstrate that the formulae of Lecavelier et al. and Benneke and Seager are identical: the former is inferring the temperature while assuming a value for the mean molecular mass and the latter is inferring the mean molecular mass while assuming a value for the temperature. More importantly, these formulae cannot be used to distinguish between cloudy and cloud-free atmospheres. We derive values of our cloudiness index for a small sample of seven hot Saturns/Jupiters taken from Sing et al. We show that WASP-17b, WASP-31b, and HAT-P-1b are nearly cloud-free at visible wavelengths. We find the tentative trend that more irradiated atmospheres tend to have fewer clouds consisting of sub-micron-sized particles. We also derive absolute sodium and/or potassium abundances ∼10{sup 2} cm{sup −3} for WASP-17b, WASP-31b, and HAT-P-1b (and upper limits for the other objects). Higher-resolution measurements of both the sodium and potassium lines, for a larger sample of exoplanetary atmospheres, are needed to confirm or refute this trend.

  8. Genetic algorithm-based wavelength selection in multicomponent spectrophotometric determination by PLS: Application on sulfamethoxazole and trimethoprim mixture in bovine milk

    Directory of Open Access Journals (Sweden)

    Givianrad Hadi Mohammad

    2013-01-01

    Full Text Available The simultaneous determination of sulfamethoxazole (SMX and trimethoprim (TMP mixtures in bovine milk by spectrophotometric method is a difficult problem in analytical chemistry, due to spectral interferences. By means of multivariate calibration methods, such as partial least square (PLS regression, it is possible to obtain a model adjusted to the concentration values of the mixtures used in the calibration range. Genetic algorithm (GA is a suitable method for selecting wavelengths for PLS calibration of mixtures with almost identical spectra without loss of prediction capacity using the spectrophotometric method. In this study, the calibration model based on absorption spectra in the 200-400 nm range for 25 different mixtures of SMX and TMP Calibration matrices were formed form samples containing 0.25-20 and 0.3-21 μg mL-1 for SMX and TMP, at pH=10, respectively. The root mean squared error of deviation (RMSED for SMX and TMP with PLS and genetic algorithm partial least square (GAPLS were 0.242, 0.066 μgmL-1 and 0.074, 0.027 μg mL-1, respectively. This procedure was allowed the simultaneous determination of SMX and TMP in synthetic and real samples and good reliability of the determination was proved.

  9. Photonic crystal ring resonator-based four-channel dense wavelength division multiplexing demultiplexer on silicon on insulator platform: design and analysis

    Science.gov (United States)

    Sreenivasulu, Tupakula; Bhowmick, Kaustav; Samad, Shafeek A.; Yadunath, Thamerassery Illam R.; Badrinarayana, Tarimala; Hegde, Gopalkrishna; Srinivas, Talabattula

    2018-04-01

    A micro/nanofabrication feasible compact photonic crystal (PC) ring-resonator-based channel drop filter has been designed and analyzed for operation in C and L bands of communication window. The four-channel demultiplexer consists of ring resonators of holes in two-dimensional PC slab. The proposed assembly design of dense wavelength division multiplexing setup is shown to achieve optimal quality factor, without altering the lattice parameters or resonator size or inclusion of scattering holes. Transmission characteristics are analyzed using the three-dimensional finite-difference time-domain simulation approach. The radiation loss of the ring resonator was minimized by forced cancelation of radiation fields by fine-tuning the air holes inside the ring resonator. An average cross talk of -34 dB has been achieved between the adjacent channels maintaining an average quality factor of 5000. Demultiplexing is achieved by engineering only the air holes inside the ring, which makes it a simple and tolerant design from the fabrication perspective. Also, the device footprint of 500 μm2 on silicon on insulator platform makes it easy to fabricate the device using e-beam lithography technique.

  10. Enhanced light output from the nano-patterned InP semiconductor substrate through the nanoporous alumina mask.

    Science.gov (United States)

    Jung, Mi; Kim, Jae Hun; Lee, Seok; Jang, Byung Jin; Lee, Woo Young; Oh, Yoo-Mi; Park, Sun-Woo; Woo, Deokha

    2012-07-01

    A significant enhancement in the light output from nano-patterned InP substrate covered with a nanoporous alumina mask was observed. A uniform nanohole array on an InP semiconductor substrate was fabricated by inductively coupled plasma reactive ion etching (ICP-RIE), using the nanoporous alumina mask as a shadow mask. The light output property of the semiconductor substrate was investigated via photoluminescence (PL) intensity measurement. The InP substrate with a nanohole array showed a more enhanced PL intensity compared with the raw InP substrate without a nanohole structure. After ICP-RIE etching, the light output from the nanoporous InP substrate covered with a nanoporous alumina mask showed fourfold enhanced PL intensity compared with the raw InP substrate. These results can be used as a prospective method for increasing the light output efficiency of optoelectronic devices.

  11. Comparison of cloud top heights derived from FY-2 meteorological satellites with heights derived from ground-based millimeter wavelength cloud radar

    Science.gov (United States)

    Wang, Zhe; Wang, Zhenhui; Cao, Xiaozhong; Tao, Fa

    2018-01-01

    Clouds are currently observed by both ground-based and satellite remote sensing techniques. Each technique has its own strengths and weaknesses depending on the observation method, instrument performance and the methods used for retrieval. It is important to study synergistic cloud measurements to improve the reliability of the observations and to verify the different techniques. The FY-2 geostationary orbiting meteorological satellites continuously observe the sky over China. Their cloud top temperature product can be processed to retrieve the cloud top height (CTH). The ground-based millimeter wavelength cloud radar can acquire information about the vertical structure of clouds-such as the cloud base height (CBH), CTH and the cloud thickness-and can continuously monitor changes in the vertical profiles of clouds. The CTHs were retrieved using both cloud top temperature data from the FY-2 satellites and the cloud radar reflectivity data for the same time period (June 2015 to May 2016) and the resulting datasets were compared in order to evaluate the accuracy of CTH retrievals using FY-2 satellites. The results show that the concordance rate of cloud detection between the two datasets was 78.1%. Higher consistencies were obtained for thicker clouds with larger echo intensity and for more continuous clouds. The average difference in the CTH between the two techniques was 1.46 km. The difference in CTH between low- and mid-level clouds was less than that for high-level clouds. An attenuation threshold of the cloud radar for rainfall was 0.2 mm/min; a rainfall intensity below this threshold had no effect on the CTH. The satellite CTH can be used to compensate for the attenuation error in the cloud radar data.

  12. MIT wavelength tables. Volume 2. Wavelengths by element

    International Nuclear Information System (INIS)

    Phelps, F.M. III.

    1982-01-01

    This volume is the first stage of a project to expand and update the MIT wavelength tables first compiled in the 1930's. For 109,325 atomic emission lines, arranged by element, it presents wavelength in air, wavelength in vacuum, wave number and intensity. All data are stored on computer-readable magnetic tape

  13. InP based semioconductor structures for radiation detection

    Czech Academy of Sciences Publication Activity Database

    Procházková, Olga; Grym, Jan; Pekárek, Ladislav; Zavadil, Jiří; Žďánský, Karel

    2008-01-01

    Roč. 19, 8/9 (2008), s. 700-775 ISSN 0957-4522. [Semiconducting & Insulating Materials Conference - SIMC /14./. Fayetteville, 15.05.2007-20.05.2007] R&D Projects: GA ČR GA102/06/0153 Institutional research plan: CEZ:AV0Z20670512 Keywords : semiconductor technology * rare earth compounds * radiation detectors Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.054, year: 2008

  14. Particle detectors based on semiconducting InP epitaxial layers

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan; Žďánský, Karel

    2011-01-01

    Roč. 6, C01072 (2011), C010721-C010725 ISSN 1748-0221 R&D Projects: GA AV ČR KJB200670901; GA MŠk(CZ) OC10021; GA ČR(CZ) GP102/08/P617 Institutional research plan: CEZ:AV0Z20670512 Keywords : Solid state detectors * Gamma detectors * Radiation-hard detectors Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.869, year: 2011

  15. Vertical Ge photodetector base on InP taper waveguide

    Science.gov (United States)

    Amiri, Iraj Sadegh; Ariannejad, M. M.; Azzuhri, S. R. B.; Anwar, T.; Kouhdaragh, V.; Yupapin, P.

    2018-06-01

    In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition.

  16. Impacto da utilização de previsões "defasadas" no sistema de previsão de tempo por conjunto do CPTEC/INPE The impact of using lagged forecasts on the CPTEC/INPE ensemble prediction system

    Directory of Open Access Journals (Sweden)

    Lúcia Helena Ribas Machado

    2010-03-01

    Full Text Available Neste trabalho é descrita a aplicação da técnica de previsões defasadas no sistema de previsão de tempo por conjuntos do Centro de Previsão de Tempo e Estudos Climáticos (EPS-CPTEC/INPE. Os dados do CPTEC/INPE consistem em uma amostra de dois meses com previsões de 15 dias para as variáveis: altura geopotencial em 500 hPa, temperatura do ar no nível de 850 hPa, e pressão atmosférica ao nível médio do mar. O estudo consiste em investigar: 1 o desempenho do EPS-CPTEC/INPE utilizando a técnica de previsões defasadas comparado àquele do conjunto operacional; 2 a relação entre o espalhamento e o desempenho da previsão, a fim de avaliar o uso da dispersão como preditor do desempenho. Os resultados indicam que a utilização de previsões defasadas em 12h, melhora o desempenho do conjunto operacional, contribuindo para aumentar o espalhamento do conjunto e, conseqüentemente, reduzir a sub-dispersão do sistema. Também foi observado que o conjunto defasado tem desempenho comparável àquele do conjunto operacional e que há uma tendência de desempenho alto quando o espalhamento é baixo, para os prazos de 5 e 7 dias de previsão. Estes resultados servem como base para a implementação operacional desta técnica, que apresenta baixo custo computacional, e contribui para a utilização mais eficiente das previsões por conjunto do CPTEC/INPE.In this work we report the application of the lagged average forecasting technique to CPTEC/INPE ensemble forecast. The CPTEC/INPE data consist of two months samples of 15 days forecast for the variables: geopotential height at 500 hPa, air temperature at 850 hPa and mean sea level atmospheric pressure. We focus on the following: 1 Does the lagged averaged ensemble forecast improve forecast skill compared to the CPTEC/INPE operational ensemble? 2 Is the dispersion of the ensemble useful in predicting forecast skill? The results indicate that the utilization of 12h-lagged average forecasts

  17. Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties.

    Science.gov (United States)

    Gerngross, Mark-Daniel; Carstensen, Jürgen; Föll, Helmut

    2014-01-01

    The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor (RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires.

  18. P/N InP solar cells on Ge wafers

    Science.gov (United States)

    Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

    1994-01-01

    Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

  19. Simultaneous multichannel wavelength multicasting and XOR logic gate multicasting for three DPSK signals based on four-wave mixing in quantum-dot semiconductor optical amplifier.

    Science.gov (United States)

    Qin, Jun; Lu, Guo-Wei; Sakamoto, Takahide; Akahane, Kouichi; Yamamoto, Naokatsu; Wang, Danshi; Wang, Cheng; Wang, Hongxiang; Zhang, Min; Kawanishi, Tetsuya; Ji, Yuefeng

    2014-12-01

    In this paper, we experimentally demonstrate simultaneous multichannel wavelength multicasting (MWM) and exclusive-OR logic gate multicasting (XOR-LGM) for three 10Gbps non-return-to-zero differential phase-shift-keying (NRZ-DPSK) signals in quantum-dot semiconductor optical amplifier (QD-SOA) by exploiting the four-wave mixing (FWM) process. No additional pump is needed in the scheme. Through the interaction of the input three 10Gbps DPSK signal lights in QD-SOA, each channel is successfully multicasted to three wavelengths (1-to-3 for each), totally 3-to-9 MWM, and at the same time, three-output XOR-LGM is obtained at three different wavelengths. All the new generated channels are with a power penalty less than 1.2dB at a BER of 10(-9). Degenerate and non-degenerate FWM components are fully used in the experiment for data and logic multicasting.

  20. Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Yen-Tang Huang

    2014-01-01

    Full Text Available Hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H alloys were developed for application in Si-based thin-film solar cells. The effects of the germane concentration (RGeH4 and the hydrogen ratio (RH2 on the μc-Si1-xGex:H alloys and the corresponding single-junction thin-film solar cells were studied. The behaviors of Ge incorporation in a-Si1-xGex:H and μc-Si1-xGex:H were also compared. Similar to a-Si1-xGex:H, the preferential Ge incorporation was observed in μc-Si1-xGex:H. Moreover, a higher RH2 significantly promoted Ge incorporation for a-Si1-xGex:H, while the Ge content was not affected by RH2 in μc-Si1-xGex:H growth. Furthermore, to eliminate the crystallization effect, the 0.9 μm thick absorbers with a similar crystalline volume fraction were applied. With the increasing RGeH4, the accompanied increase in Ge content of μc-Si1-xGex:H narrowed the bandgap and markedly enhanced the long-wavelength absorption. However, the bias-dependent EQE measurement revealed that too much Ge incorporation in absorber deteriorated carrier collection and cell performance. With the optimization of RH2 and RGeH4, the single-junction μc-Si1-xGex:H cell achieved an efficiency of 5.48%, corresponding to the crystalline volume fraction of 50.5% and Ge content of 13.2 at.%. Compared to μc-Si:H cell, the external quantum efficiency at 800 nm had a relative increase by 33.1%.

  1. Characterization and optimization of a high-efficiency AlGaAs-On-Insulator-based wavelength converter for 64- and 256-QAM signals

    DEFF Research Database (Denmark)

    Da Ros, Francesco; Yankov, Metodi Plamenov; Porto da Silva, Edson

    2017-01-01

    of the wavelength converter is reported, including the optimization of the AlGaAsOI nano-waveguide in terms of conversion efficiency and associated bandwidth and the analysis of the impact of the converter pump quality and power as well as the signal input power. The optimized converter enables generating idlers......In this paper, we demonstrate wavelength conversion of advanced modulation formats such as 10-GBd 64-QAM and 256-QAM with high conversion efficiency over a 29-nm spectral window by using four-wave mixing in an AlGaAs-On-Insulator (AlGaAsOI) nano-waveguide. A thorough characterization...

  2. Reflectors and tuning elements for widely-tunable GaAs-based sampled grating DBR lasers

    Science.gov (United States)

    Brox, O.; Wenzel, H.; Della Case, P.; Tawfieq, M.; Sumpf, B.; Weyers, M.; Knigge, A.

    2018-02-01

    Widely-tunable lasers without moving parts are attractive light sources for sensors in industry and biomedicine. In contrast to InP based sampled grating (SG) distributed Bragg reflector (DBR) diode lasers which are commercially available, shorter wavelength GaAs SG-DBR lasers are still under development. One reason is the difficulty to integrate gratings with coupling coefficients that are high enough for functional grating bursts with lengths below 10 μm. Recently we have demonstrated > 20 nm wide quasi-continuous tuning with a GaAs based SG-DBR laser emitting around 975 nm. Wavelength selective reflectors are realized with SGs having different burst periods for the front and back mirrors. Thermal tuning elements (resistors) which are placed on top of the SG allow the control of the spectral positions of the SG reflector combs and hence to adjust the Vernier mode. In this work we characterize subsections of the developed SG-DBR laser to further improve its performance. We study the impact of two different vertical structures (with vertical far field FWHMs of 41° and 24°) and two grating orders on the coupling coefficient. Gratings with coupling coefficients above 350 cm-1 have been integrated into SG-DBR lasers. We also examine electronic tuning elements (a technique which is typically applied in InP based SG-DBR lasers and allows tuning within nanoseconds) and discuss the limitations in the GaAs material system

  3. Surface processes during purification of InP quantum dots

    Directory of Open Access Journals (Sweden)

    Natalia Mordvinova

    2014-08-01

    Full Text Available Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during the purification the hydrolysis of the indium precursor takes place, which leads to a better surface passivation. The electrophoretic purification technique does not increase luminescence efficiency but yields very pure quantum dots in only a few minutes. Additionally, the formation of In(OH3 during the low temperature synthesis was explained. Purification of quantum dots is a very significant part of postsynthetical treatment that determines the properties of the material. But this subject is not sufficiently discussed in the literature. The paper is devoted to the processes that occur at the surface of quantum dots during purification. A new method of purification, electrophoresis, is investigated and described in particular.

  4. Subwavelength Gold Grating as Polarizers Integrated with InP-Based InGaAs Sensors.

    Science.gov (United States)

    Wang, Rui; Li, Tao; Shao, Xiumei; Li, Xue; Huang, Xiaqi; Shao, Jinhai; Chen, Yifang; Gong, Haimei

    2015-07-08

    There are currently growing needs for polarimetric imaging in infrared wavelengths for broad applications in bioscience, communications and agriculture, etc. Subwavelength metallic gratings are capable of separating transverse magnetic (TM) mode from transverse electric (TE) mode to form polarized light, offering a reliable approach for the detection in polarization way. This work aims to design and fabricate subwavelength gold gratings as polarizers for InP-based InGaAs sensors in 1.0-1.6 μm. The polarization capability of gold gratings on InP substrate with pitches in the range of 200-1200 nm (fixed duty cycle of 0.5) has been systematically studied by both theoretical modeling with a finite-difference time-domain (FDTD) simulator and spectral measurements. Gratings with 200 nm lines/space in 100-nm-thick gold have been fabricated by electron beam lithography (EBL). It was found that subwavelength gold gratings directly integrated on InP cannot be applied as good polarizers, because of the existence of SPP modes in the detection wavelengths. An effective solution has been found by sandwiching the Au/InP bilayer using a 200 nm SiO2 layer, leading to significant improvement in both TM transmission and extinction ratio. At 1.35 μm, the improvement factors are 8 and 10, respectively. Therefore, it is concluded that the Au/SiO2/InP trilayer should be a promising candidate of near-infrared polarizers for the InP-based InGaAs sensors.

  5. Characterization of a Wavelength Converter for 256-QAM Signals Based on an AlGaAs-On-Insulator Nano-waveguide

    DEFF Research Database (Denmark)

    Da Ros, Francesco; Yankov, Metodi Plamenov; Porto da Silva, Edson

    2016-01-01

    High efficiency and broadband wavelength conversion in a 9-mm AlGaAs-On-Insulator waveguide is shown to provide high-quality (OSNR > 30 dB) idler generation over a 28-nm bandwidth enabling error-free conversion of 10-GBd 256-QAM with OSNR penalty below 2.5 dB....

  6. Nonepitaxial Thin-Film InP for Scalable and Efficient Photocathodes.

    Science.gov (United States)

    Hettick, Mark; Zheng, Maxwell; Lin, Yongjing; Sutter-Fella, Carolin M; Ager, Joel W; Javey, Ali

    2015-06-18

    To date, some of the highest performance photocathodes of a photoelectrochemical (PEC) cell have been shown with single-crystalline p-type InP wafers, exhibiting half-cell solar-to-hydrogen conversion efficiencies of over 14%. However, the high cost of single-crystalline InP wafers may present a challenge for future large-scale industrial deployment. Analogous to solar cells, a thin-film approach could address the cost challenges by utilizing the benefits of the InP material while decreasing the use of expensive materials and processes. Here, we demonstrate this approach, using the newly developed thin-film vapor-liquid-solid (TF-VLS) nonepitaxial growth method combined with an atomic-layer deposition protection process to create thin-film InP photocathodes with large grain size and high performance, in the first reported solar device configuration generated by materials grown with this technique. Current-voltage measurements show a photocurrent (29.4 mA/cm(2)) and onset potential (630 mV) approaching single-crystalline wafers and an overall power conversion efficiency of 11.6%, making TF-VLS InP a promising photocathode for scalable and efficient solar hydrogen generation.

  7. ESCA and electron diffraction studies of InP surface heated under As molecular beam exposure

    International Nuclear Information System (INIS)

    Sugiura, Hideo; Yamaguchi, Masafumi; Shibukawa, Atsushi

    1983-01-01

    Chemical composition of InP substrate surface heattreated under As molecular beam exposure in an ultrahigh vacuum chamber was studied with ESCA, and surface reconstruction of the substrate was examined by in-situ electron diffraction. The InP substrate heated under the exposure of As molecular beam has mirror surface up to 590 0 C while the surface of InP heated above 400 0 C in vacuum is roughened. The ESCA study shows that thin InAs layer (thickness 0 C under the exposure of As. The electron diffraction study indicates that the InP is cleaned at about 500 0 C in As pressures of 10 -7 - 10 -5 Torr. The InP surface is prevented from thermally decomposing by the coverage of the InAs layer, which may be formed through the following process: 2InPO 4 + As 4 → 2InAs + P 2 O 5 + As 2 O 3 . (author)

  8. Assembly of phosphide nanocrystals into porous networks: formation of InP gels and aerogels.

    Science.gov (United States)

    Hitihami-Mudiyanselage, Asha; Senevirathne, Keerthi; Brock, Stephanie L

    2013-02-26

    The applicability of sol-gel nanoparticle assembly routes, previously employed for metal chalcogenides, to phosphides is reported for the case of InP. Two different sizes (3.5 and 6.0 nm) of InP nanoparticles were synthesized by solution-phase arrested precipitation, capped with thiolate ligands, and oxidized with H₂O₂ or O₂/light to induce gel formation. The gels were aged, solvent-exchanged, and then supercritically dried to obtain aerogels with both meso- (2-50 nm) and macropores (>50 nm) and accessible surface areas of ∼200 m²/g. Aerogels showed higher band gap values relative to precursor nanoparticles, suggesting that during the process of assembling nanoparticles into 3D architectures, particle size reduction may have taken place. In contrast to metal chalcogenide gelation, InP gels did not form using tetranitromethane, a non-oxygen-transferring oxidant. The requirement of an oxygen-transferring oxidant, combined with X-ray photoelectron spectroscopy data showing oxidized phosphorus, suggests gelation is occurring due to condensation of phosphorus oxoanionic moieties generated at the interfaces. The ability to link discrete InP nanoparticles into a 3D porous network while maintaining quantum confinement is expected to facilitate exploitation of nanostructured InP in solid-state devices.

  9. Analysis of subsystems in wavelength-division-multiplexing networks

    DEFF Research Database (Denmark)

    Liu, Fenghai

    2001-01-01

    Wavelength division multiplexing (WDM) technology together with optical amplification has created a new era for optical communication. Transmission capacity is greatly increased by adding more and more wavelength channels into a single fiber, as well as by increasing the line rate of each channel...... in semiconductor optical amplifiers (SOAs), and dispersion managed fiber sections. New subsystems are also proposed in the thesis: a modular 2×2 multiwavelength cross-connect using wavelength switching blocks, a wavelength converter based on cross phase modulation in a semiconductor modulator, a wavelength...

  10. The electrochemistry of InP in Br2/HBr solutions and its relevance to etching behaviour

    NARCIS (Netherlands)

    Notten, P.H.L.; Damen, A.A.J.M.

    1987-01-01

    Etch rate-potential curves of p-InP in HBr and Br2/HBr solutions in the dark and under illumination were correlated with current-potential curves. It was found that InP is etched via a "chemical" mechanism both by HBr and Br2. In aqueous HBr solutions InP is only etched at a significant rate at

  11. A high-coverage nanoparticle monolayer for the fabrication of a subwavelength structure on InP substrates.

    Science.gov (United States)

    Kim, Dae-Seon; Park, Min-Su; Jang, Jae-Hyung

    2011-08-01

    Subwavelength structures (SWSs) were fabricated on the Indium Phosphide (InP) substrate by utilizing the confined convective self-assembly (CCSA) method followed by reactive ion etching (RIE). The surface condition of the InP substrate was changed by depositing a 30-nm-thick SiO2 layer and subsequently treating the surface with O2 plasma to achieve better surface coverage. The surface coverage of nanoparticle monolayer reached 90% by using O2 plasma-treated SiO2/InP substrate among three kinds of starting substrates such as the bare InP, SiO2/InP and O2 plasma-treated SiO2/InP substrate. A nanoparticle monolayer consisting of polystyrene spheres with diameter of 300 nm was used as an etch mask for transferring a two-dimensional periodic pattern onto the InP substrate. The fabricated conical SWS with an aspect ratio of 1.25 on the O2 plasma-treated SiO2/InP substrate exhibited the lowest reflectance. The average reflectance of the conical SWS was 5.84% in a spectral range between 200 and 900 nm under the normal incident angle.

  12. Study of dielectric relaxation and AC conductivity of InP:S single crystal

    Science.gov (United States)

    El-Nahass, M. M.; Ali, H. A. M.; El-Shazly, E. A.

    2012-07-01

    The dielectric relaxation and AC conductivity of InP:S single crystal were studied in the frequency range from 100 to 5.25 × 105 Hz and in the temperature range from 296 to 455 K. The dependence of the dielectric constant (ɛ1) and the dielectric loss (ɛ2) on both frequency and temperature was investigated. Since no peak was observed on the dielectric loss, we used a method based on the electric modulus to evaluate the activation energy of the dielectric relaxation. Scaling of the electric modulus spectra showed that the charge transport dynamics is independent of temperature. The AC conductivity (σAC) was found to obey the power law: Aωs. Analysis of the AC conductivity data and the frequency exponent showed that the correlated barrier hopping (CBH) model is the dominant mechanism for the AC conduction. The variation of AC conductivity with temperature at different frequencies showed that σAC is a thermally activated process.

  13. Twin and grain boundary in InP: A synchrotron radiation study

    International Nuclear Information System (INIS)

    Han, Y.; Liu, X.; Jiao, J.; Lin, L.; Jiang, J.; Wang, Z.; Tian, Y.

    1998-01-01

    Experimentally observed X-ray reflectivity curves show bi-crystal(twin) characteristics. The study revealed that there was defect segregation at the twin boundary. Stress was relaxed at the edge of the boundary. Relaxation of the stress resulted in formation of twin and other defects. As a result of formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. So a twin model was proposed to explain the experimental results. Stress(mainly thermal stress), chemical stoichiometry deviation and impurities nonhomogeneous distributions are the key factors that cause twins in LEC InP crystal growth. Twins on (111) face in LEC InP crystal were studied. Experimental evidence of above mentioned twin model and suggestions on how to get twin-free LEC InP single crystals will be discussed

  14. Electrical properties of InP irradiated by fast neutrons of a nuclear reactor

    International Nuclear Information System (INIS)

    Kolin, N.G.; Merkurisov, D.I.; Solov'ev, S.P.

    2000-01-01

    Electrophysical properties of InP single crystalline samples with different initial concentration of charge carriers have been studied in relation to irradiation conditions with fast neutrons of a nuclear reactor and subsequent heat treatments within the temperature range of 20-900 deg C. It has been shown that changes of the properties depend on the initial doping level. The annealing in the temperature range mentioned above results in the elimination of radiation defects. This makes possible to use the nuclear doping method for InP samples. In this respect the contribution of intermediate neutron reactions to the whole effect of the InP nuclear doping is estimated to be ∼ 10% [ru

  15. Magnetic circular dichroism study of electron-irradiation induced defects in InP

    International Nuclear Information System (INIS)

    Gislason, H.P.

    1989-01-01

    A strong magnetic circular dichroism (MCD) absorption band centered at 1.07 eV in electron irradiated InP is reported. Temperature and magnetic field dependence of the signal reveal that the centre giving rise to this band is a spin triplet. By simulating neutral and reverse bias conditions of junction measurements through a careful choice of irradiation dose and starting material, the MCD band is shown to have an annealing behaviour closely resembling that of the majority carrier traps which control the Fermi level position in n- and p-type InP. The 1.07 eV MCD band represents the first magneto-optical signal connected with this family of complex irradiation-induced defects in InP. (author) 19 refs., 5 figs., 1 tab

  16. Amorphization and recrystallization in MeV ion implanted InP crystals

    International Nuclear Information System (INIS)

    Xiong, F.; Nieh, C.W.; Jamieson, D.N.; Vreeland, T. Jr.; Tombrello, T.A.

    1988-01-01

    A comprehensive study of MeV- 15 N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained

  17. Composition and structure of ion-bombardment-induced growth cones on InP

    International Nuclear Information System (INIS)

    Malherbe, J.B.; Lakner, H.; Gries, W.H.

    1991-01-01

    The previously reported effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth 'cones' induced by argon ion bombardment of (100) InP between 7 and 10 keV proved the cones to consist of crystalline InP (and not metallic indium, as has sometimes been claimed). The investigation showed that the irradiated surface region is not rendered completely amorphous but that it recrystallizes from the crystalline/amorphous interface in a columnar growth pattern, often terminating in growth cones protruding above the surface. Weak beam investigations revealed that the overwhelming majority of the cones have the orientation of the substrate. These phenomena were observed at all dose densities from 7 x 10 15 to 2 x 10 17 cm -2 . (author)

  18. Band gap and band offset of (GaIn)(PSb) lattice matched to InP

    Science.gov (United States)

    Köhler, F.; Böhm, G.; Meyer, R.; Amann, M.-C.

    2005-07-01

    Metastable (GaxIn1-x)(PySb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (GaxIn1-x)(PySb1-y). In addition, samples with layer thicknesses larger than 100nm showed direct PL across the band gap of (GaxIn1-x)(PySb1-y). Band-gap energies and band offset energies of (GaxIn1-x)(PySb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

  19. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

    Science.gov (United States)

    Schukfeh, M I; Storm, K; Hansen, A; Thelander, C; Hinze, P; Beyer, A; Weimann, T; Samuelson, L; Tornow, M

    2014-11-21

    We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.

  20. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments

    International Nuclear Information System (INIS)

    Schukfeh, M I; Hansen, A; Tornow, M; Storm, K; Thelander, C; Samuelson, L; Hinze, P; Weimann, T; Beyer, A

    2014-01-01

    We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor–liquid–solid grown InAs nanowires with embedded InP segments of 10–60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap. (paper)

  1. Comparison of WDM/Pulse-Position-Modulation (WDM/PPM) with Code/Pulse-Position-Swapping (C/PPS) Based on Wavelength/Time Codes

    Energy Technology Data Exchange (ETDEWEB)

    Mendez, A J; Hernandez, V J; Gagliardi, R M; Bennett, C V

    2009-06-19

    Pulse position modulation (PPM) signaling is favored in intensity modulated/direct detection (IM/DD) systems that have average power limitations. Combining PPM with WDM over a fiber link (WDM/PPM) enables multiple accessing and increases the link's throughput. Electronic bandwidth and synchronization advantages are further gained by mapping the time slots of PPM onto a code space, or code/pulse-position-swapping (C/PPS). The property of multiple bits per symbol typical of PPM can be combined with multiple accessing by using wavelength/time [W/T] codes in C/PPS. This paper compares the performance of WDM/PPM and C/PPS for equal wavelengths and bandwidth.

  2. An ultra-wideband tunable multi-wavelength Brillouin fibre laser based on a semiconductor optical amplifier and dispersion compensating fibre in a linear cavity configuration

    International Nuclear Information System (INIS)

    Zulkifli, M Z; Ahmad, H; Hassan, N A; Jemangin, M H; Harun, S W

    2011-01-01

    A multi-wavelength Brillouin fibre laser (MBFL) with an ultra-wideband tuning range from 1420 nm to 1620 nm is demonstrated. The MBFL uses an ultra-wideband semiconductor optical amplifier (SOA) and a dispersion compensating fibre (DCF) as the linear gain medium and nonlinear gain medium, respectively. The proposed MBFL has a wide tuning range covering the short (S-), conventional (C-) and long (L-) bands with a wavelength spacing of 0.08 nm, making it highly suitable for DWDM system applications. The output power of the observed Brillouin Stokes ranges approximately from -5.94 dBm to -0.41 dBm for the S-band, from -4.34 dBm to 0.02 dBm for the C-band and from -2.19 dBm to 0.39 dBm for the L-band. The spacing between each adjacent wavelengths of all the three bands is about 0.08 nm, which is approximately 10.7 GHz for the frequency domain. (lasers)

  3. Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

    Science.gov (United States)

    Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

    2009-01-01

    Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

  4. Saturation broadening effect in an InP photonic-crystal nanocavity switch

    DEFF Research Database (Denmark)

    Yu, Yi; Palushani, Evarist; Heuck, Mikkel

    2014-01-01

    Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA.......Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA....

  5. Metastability of the phosphorus antisite defect in low-temperature InP

    International Nuclear Information System (INIS)

    Mikucki, J.; Baj, M.; Wasik, D.; Walukiewicz, W.; Bi, W. G.; Tu, C. W.

    2000-01-01

    We report on the transport properties of low-temperature (LT) InP/In x Ga 1-x As/InP heterostructures and LT InP thin films. Hall effect measurements performed at hydrostatic pressure up to 1.5 GPa and temperatures ranging from 4.2 K to 250 K on both types of samples as well as Shubnikov-de Haas experiments made on heterostructures clearly reveal the metastable character of phosphorus antisite defects present in LT InP layers. (c) 2000 The American Physical Society

  6. Carrier removal and defect behavior in p-type InP

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

    1992-01-01

    A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

  7. Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP.

    Science.gov (United States)

    Muñoz, P; García-Olcina, R; Habib, C; Chen, L R; Leijtens, X J M; de Vries, T; Robbins, D; Capmany, J

    2011-07-04

    In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster.

  8. Use of halide transport in epitaxial growth of InP and related compounds

    Energy Technology Data Exchange (ETDEWEB)

    Somogyi, K. [Hungarian Academy of Sciences, Budapest (Hungary). Research Inst. for Technical Physics

    1996-12-31

    In this paper methods and results in the InP (and related) growth practice are reviewed, classified and summarized on the basis of the recent literature. The aim is to show the present place and role of the halogen transport in the epitaxial growth. In the case of InP the importance of the classical hydride method is still high. Though MOVPE technique dominates in the case of growth of the compounds with In content, atomic layer epitaxy and selective area growth are successful with auxiliary application of the halogen transport. Chlorine assisted MOVPE has an increasing role.

  9. AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp)3)

    International Nuclear Information System (INIS)

    Akane, T.; Jinno, S.; Yang, Y.; Kuno, T.; Hirata, T.; Isogai, Y.; Watanabe, N.; Fujiwara, Y.; Nakamura, A.; Takeda, Y.

    2003-01-01

    ErP has been grown on InP(0 0 1) substrates by organometallic vapor phase epitaxy (OMVPE) using a new liquid organic Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp) 3 ). Morphological change of an ErP layer on InP(0 0 1) is investigated together with that of an overgrown capping InP layer. Optimum growth condition of InP causes islanding on over-monolayer-ErP. A relatively low overgrowth temperature of InP is a key factor for attaining complete capping coverage on ErP

  10. Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires

    International Nuclear Information System (INIS)

    Lindgren, David; Kawaguchi, Kenichi; Heurlin, Magnus; Borgström, Magnus T; Pistol, Mats-Erik; Samuelson, Lars; Gustafsson, Anders

    2013-01-01

    Correlated micro-photoluminescence (μPL) and cathodoluminescence (CL) measurements are reported for single core–shell InP–InAs wurtzite nanowires grown using metal–organic vapor phase epitaxy. Samples covering a radial InAs shell thickness of 1–12 ML were investigated. The effective masses for the wurtzite material were determined from the transition energy dependence of the InAs shell thickness, using a model based on linear deformation potential theory. InP cores with segments of mixed zincblende and wurtzite, on which quantum dots nucleated selectively, were also investigated. Narrow peaks were observed by μPL and the spatial origin of the emission was identified with CL imaging. (paper)

  11. Wavelength division multiplexing a practical engineering guide

    CERN Document Server

    Grobe, Klaus

    2013-01-01

    In this book, Optical Wavelength Division Multiplexing (WDM) is approached from a strictly practical and application-oriented point of view. Based on the characteristics and constraints of modern fiber-optic components, transport systems and fibers, the text provides relevant rules of thumb and practical hints for technology selection, WDM system and link dimensioning, and also for network-related aspects such as wavelength assignment and resilience mechanisms. Actual 10/40 Gb/s WDM systems are considered, and a preview of the upcoming 100 Gb/s systems and technologies for even higher bit rate

  12. Topology Optimization of Sub-Wavelength Antennas

    DEFF Research Database (Denmark)

    Erentok, Aycan; Sigmund, Ole

    2011-01-01

    We propose a topology optimization strategy for the systematic design of a three-dimensional (3D), conductor-based sub-wavelength antenna. The post-processed finite-element (FE) models of the optimized structure are shown to be self-resonant, efficient and exhibit distorted omnidirectional...

  13. Wavelength encoding technique for particle analyses in hematology analyzer

    Science.gov (United States)

    Rongeat, Nelly; Brunel, Patrick; Gineys, Jean-Philippe; Cremien, Didier; Couderc, Vincent; Nérin, Philippe

    2011-07-01

    The aim of this study is to combine multiple excitation wavelengths in order to improve accuracy of fluorescence characterization of labeled cells. The experimental demonstration is realized with a hematology analyzer based on flow cytometry and a CW laser source emitting two visible wavelengths. A given optical encoding associated to each wavelength allows fluorescence identification coming from specific fluorochromes and avoiding the use of noisy compensation method.

  14. Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials

    Directory of Open Access Journals (Sweden)

    Ma Li

    2011-01-01

    Full Text Available Abstract A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics. PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa

  15. Electrical properties of bulk InP synthesized by modified horizontal Bridgman method

    International Nuclear Information System (INIS)

    Pak, K.; Matsui, M.; Fukuhara, H.; Nishinaga, T.; Nakamura, T.; Yasuda, Y.

    1986-01-01

    High purity polycrystalline InP has been required for preparation of starting materials in LEC pulling. Usually, these materials are synthesized by the horizontal Bridgman (HB) or gradient freeze (GF) method. The major problem for InP synthesis has been attributed to silicon contamination during the growth, as shown by several workers. In a previous paper, the authors proposed a model in which the silicon contamination would occur due to the transport of SiO and In/sub 2/O gas species from the In-P melt to the phosphorus region by the reaction of the melt with the quartz boat in the HB growth system and suggested that the Si concentration in the In-P melt would have an intimate correlation with the temperature in the phosphorus region. However, the effect of the temperature in the phosphorus region on the electrical properties has not been studied in details as of yet. In this note, a modified horizontal Bridgman (MHB) method was developed to reduce the residual donor impurities, and the reduction mechanism is discussed

  16. The etching of InP in HCl solutions : a chemical mechanism

    NARCIS (Netherlands)

    Notten, P.H.L.

    1984-01-01

    The etch rate of InP in solutions of high HCl concentration was shown to be independent of the applied potential ina wide potential range negative with respect to the flatband value. Dissolution of the solid led to the formation of PH3.The etch rate, which was not mass-transport controlled, was

  17. X-ray diffraction analysis of multilayer porous InP(001) structure

    Czech Academy of Sciences Publication Activity Database

    Lomov, A. A.; Punegov, V. I.; Vasil'ev, A. L.; Nohavica, Dušan; Gladkov, Petar; Kartsev, A. A.; Novikov, D. V.

    2010-01-01

    Roč. 55, č. 2 (2010), s. 182-190 ISSN 1063-7745 Institutional research plan: CEZ:AV0Z20670512 Keywords : silicon layers * INP Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.644, year: 2010

  18. Surface protection during plasma hydrogenation for acceptor passivation in InP

    International Nuclear Information System (INIS)

    Lopata, J.; Dautremont-Smith, W.C.; Pearton, S.J.; Lee, J.W.; Ha, N.T.; Luftman, H.S.

    1990-01-01

    Various dielectric and metallic films were examined as H-permeable surface protection layers on InP during H 2 or D 2 plasma exposure for passivation of acceptors in the InP. Plasma deposited SiN x , SiO 2 , and a-Si(H) films ranging in thickness from 85 to 225 angstrom were used to protect p-InP during d 2 plasma exposure at 250 degrees C. Optimum protective layer thicknesses were determined by a trade-off between the effectiveness of the layer to prevent P loss from the wafer surface and the ability to diffuse atomic H or D at a rate greater than or equal to that in the underlying InP. SIMS and capacitance-voltage depth profiling were used to determine the extent of D in-diffusion and acceptor passivation respectively. Sputter deposited W and e-beam evaporated Ti films ∼100 Angstrom thick were also evaluated. The W coated sample yielded similar results to those with dielectric films in that acceptors in p-InP were passivated to a similar depth for the same plasma exposure. The 100 Angstrom Ti film, however, did not allow the D to diffuse into the InP substrate. It is surmised that the Ti film trapped the D, thus preventing diffusion into the substrate

  19. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.

    Science.gov (United States)

    Dionízio Moreira, M; Venezuela, P; Miwa, R H

    2010-07-16

    We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

  20. Effect of Zinc Incorporation on the Performance of Red Light Emitting InP Core Nanocrystals.

    Science.gov (United States)

    Xi, Lifei; Cho, Deok-Yong; Besmehn, Astrid; Duchamp, Martial; Grützmacher, Detlev; Lam, Yeng Ming; Kardynał, Beata E

    2016-09-06

    This report presents a systematic study on the effect of zinc (Zn) carboxylate precursor on the structural and optical properties of red light emitting InP nanocrystals (NCs). NC cores were assessed using X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), energy-dispersive X-ray spectroscopy (EDX), and high-resolution transmission electron microscopy (HRTEM). When moderate Zn:In ratios in the reaction pot were used, the incorporation of Zn in InP was insufficient to change the crystal structure or band gap of the NCs, but photoluminescence quantum yield (PLQY) increased dramatically compared with pure InP NCs. Zn was found to incorporate mostly in the phosphate layer on the NCs. PL, PLQY, and time-resolved PL (TRPL) show that Zn carboxylates added to the precursors during NC cores facilitate the synthesis of high-quality InP NCs by suppressing nonradiative and sub-band-gap recombination, and the effect is visible also after a ZnS shell is grown on the cores.

  1. Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

    Science.gov (United States)

    Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

    2015-07-01

    InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

  2. Low-frequency photocurrent oscillations in InP in magnetic field

    International Nuclear Information System (INIS)

    Slobodchikov, S.V.; Salikhov, Kh.M.; Kovalevskaya, G.G.

    1994-01-01

    Results of investigations of magnetic field effect on the oscillating photocurrent in InP crytals are presented. It is shown that the magnetic field plays the part of an additional source of photocarrier injection in the sample bulk. 3 refs., 2 figs

  3. InP DHBT MMICs for millimeter-wave front-ends

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Hadziabdic, Dzenan; Krozer, Viktor

    2009-01-01

    In this paper, we show advanced MMIC's using InP DHBT technology. In particular, we demonstrate front-end circuits covering a broad frequency range from Q-band to E-band. Realizations of power amplifiers, quadrature VCOs, and sub-harmonic mixers, are presented and experimental results are discussed....

  4. Thermal stability of atom configurations around Er atoms doped in InP by OMVPE

    International Nuclear Information System (INIS)

    Ofuchi, Hironori; Ito, Takashi; Kawamoto, Takeshi; Tabuchi, Masao; Fujiwara, Yasufumi; Takeda, Yoshikazu

    1999-01-01

    It has been found that there is a threshold growth temperature between 550 deg C and 580 deg C for the change of local structure around Er atoms in InP doped Er atoms grown by organometallic vapor phase epitaxy (OMVPE). To understand whether the structure change is induced at the growing surface or during the growth as an in situ annealing, the thermal stability of the local structures around the Er atoms doped in InP by the OMVPE at 530 deg C has been investigated by the extended X-ray absorption fine structure (EXAFS). The EXAFS analysis revealed that the local structure around the Er atoms, which existed substitutionally on In sites in the InP lattice, was stable against the post-growth annealing even for 1 h at 650 deg C. Therefore, it is concluded that the local structures are formed on the growth front, and not in the volume of InP by thermal annealing during or after the growth. (author)

  5. Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials.

    Science.gov (United States)

    Zhou, Tao; Cheng, Dandan; Zheng, Maojun; Ma, Li; Shen, Wenzhong

    2011-03-31

    A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics.PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa.

  6. Oxidation of InP nanowires: a first principles molecular dynamics study.

    Science.gov (United States)

    Berwanger, Mailing; Schoenhalz, Aline L; Dos Santos, Cláudia L; Piquini, Paulo

    2016-11-16

    InP nanowires are candidates for optoelectronic applications, and as protective capping layers of III-V core-shell nanowires. Their surfaces are oxidized under ambient conditions which affects the nanowire physical properties. The majority of theoretical studies of InP nanowires, however, do not take into account the oxide layer at their surfaces. In this work we use first principles molecular dynamics electronic structure calculations to study the first steps in the oxidation process of a non-saturated InP nanowire surface as well as the properties of an already oxidized surface of an InP nanowire. Our calculations show that the O 2 molecules dissociate through several mechanisms, resulting in incorporation of O atoms into the surface layers. The results confirm the experimental observation that the oxidized layers become amorphous but the non-oxidized core layers remain crystalline. Oxygen related bonds at the oxidized layers introduce defective levels at the band gap region, with greater contributions from defects involving In-O and P-O bonds.

  7. Small- and large-signal modeling of InP HBTs in transferred-substrate technology

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas

    2014-01-01

    In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing...

  8. Application of MSM InP detectors to the measurement of pulsed X-ray radiation

    Czech Academy of Sciences Publication Activity Database

    Ryc, L.; Dobrzanski, L.; Dubecký, L.; Kaczmarczyk, J.; Pfeifer, Miroslav; Riesz, F.; Slysz, W.; Surma, B.

    2008-01-01

    Roč. 163, 4-6 (2008), 559-567 ISSN 1042-0150 R&D Projects: GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523 Keywords : InP detector * X-ray detector * picosecond detector * laser plasma Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.415, year: 2008

  9. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties

    International Nuclear Information System (INIS)

    Dionizio Moreira, M; Venezuela, P; Miwa, R H

    2010-01-01

    We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic As↔P swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

  10. X-ray structure amplitudes for GaAs and InP

    International Nuclear Information System (INIS)

    Pietsch, U.

    1985-01-01

    The structure amplitudes of GaAs and InP are calculated taking into account the nonspherical parts of the valence electron density by means of a static bond charge model. The best known temperature factors and dispersion coefficients are employed. The calculated structure amplitudes should help determining exactly the shape of X-ray diffraction patterns. (author)

  11. An InP HBT sub-harmonic mixer for E-band wireless communication

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Krozer, Viktor

    2010-01-01

    This paper reports on a novel balanced HBT subharmonic mixer (SHM) for E-band wireless communication. An LO spiral type Marchand balun is integrated with the SHM. The SHM has been fabricated in a InP double heterojunction bipolar transistor (DHBT) circuit-oriented technology with fT /fmax = 180GHz...

  12. EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Weimann, Nils; Doerner, Ralf

    2017-01-01

    In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrate...

  13. Electrical and thermal characterization of single and multi-finger InP DHBTs

    DEFF Research Database (Denmark)

    Midili, Virginio; Nodjiadjim, V.; Johansen, Tom Keinicke

    2015-01-01

    This paper presents the characterization of single and multi-finger Indium Phosphide Double Heterojunction Bipolar transistors (InP DHBTs). It is used as the starting point for technology optimization. Safe Operating Area (SOA) and small signal AC parameters are investigated along with thermal ch...

  14. Design procedure for millimeter-wave InP DHBT stacked power amplifiers

    DEFF Research Database (Denmark)

    Squartecchia, Michele; Johansen, Tom Keinicke; Midili, Virginio

    2015-01-01

    The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors...

  15. Defect formation in n-type InP at elevated temperatures of irradiation

    International Nuclear Information System (INIS)

    Kozlovskij, V.V.; Kol'chenko, T.I.; Lomako, V.M.; Moroz, S.E.

    1990-01-01

    Effect of irradiation temperature within 25-250 deg C traps in InP. Rate of most deep level introduction, as well as, rate of charge carrier removing at the increase of irradiation temperature are shown to decrease and it is explained by defect annealing occuring simultaneously with irradiation

  16. Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP

    NARCIS (Netherlands)

    Muñoz, P.; García-Olcina, R.; Habib, C.; Chen, L.R.; Leijtens, X.J.M.; Vries, de T.; Robbins, D.J.; Capmany, J.

    2011-01-01

    In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in

  17. InP monolithically integrated label swapper device for spectral amplitude coded optical packet networks

    NARCIS (Netherlands)

    Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Sancho, J.C.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

    2010-01-01

    In this paper a label swapping device, for spectral amplitude coded optical packet networks, fully integrated using InP technology is presented. Compared to previous demonstrations using discrete component assembly, the device footprint is reduced by a factor of 105 and the operation speed is

  18. Topology optimised wavelength dependent splitters

    DEFF Research Database (Denmark)

    Hede, K. K.; Burgos Leon, J.; Frandsen, Lars Hagedorn

    A photonic crystal wavelength dependent splitter has been constructed by utilising topology optimisation1. The splitter has been fabricated in a silicon-on-insulator material (Fig. 1). The topology optimised wavelength dependent splitter demonstrates promising 3D FDTD simulation results....... This complex photonic crystal structure is very sensitive against small fabrication variations from the expected topology optimised design. A wavelength dependent splitter is an important basic building block for high-performance nanophotonic circuits. 1J. S. Jensen and O. Sigmund, App. Phys. Lett. 84, 2022...

  19. AWG Filter for Wavelength Interrogator

    Science.gov (United States)

    Black, Richard J. (Inventor); Costa, Joannes M. (Inventor); Faridian, Fereydoun (Inventor); Moslehi, Behzad (Inventor); Sotoudeh, Vahid (Inventor)

    2015-01-01

    A wavelength interrogator is coupled to a circulator which couples optical energy from a broadband source to an optical fiber having a plurality of sensors, each sensor reflecting optical energy at a unique wavelength and directing the reflected optical energy to an AWG. The AWG has a detector coupled to each output, and the reflected optical energy from each grating is coupled to the skirt edge response of the AWG such that the adjacent channel responses form a complementary pair response. The complementary pair response is used to convert an AWG skirt response to a wavelength.

  20. Ultrafast recombination in H+ bombarded InP and GaAs: Consequences for the carrier distribution functions

    International Nuclear Information System (INIS)

    Lamprecht, K.F.; Juen, S.; Hoepfel, R.A.; Palmetshofer, L.

    1992-01-01

    The authors studied the lifetimes and the luminescence spectra of photoexcited carriers in H + bombarded InP and GaAs for different damage doses by means of femtosecond luminescence spectroscopy. For InP the lifetime decreases down to 95 fs for the highest dose, whereas for GaAs no shorter lifetime than 650 fs could be observed. With decreasing lifetime they observe an increase of the high energy tail of the time-integrated luminescence spectrum which is even inverted for the 95 fs InP sample