Study on stability of a-SiCOF films deposited by plasma enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Ding Shijin; Zhang Qingquan; Wang Pengfei; Zhang Wei; Wang Jitao

2001-01-01

Low-dielectric-constant a-SiCOF films have been prepared from TEOS, C 4 F 8 and Ar by using plasma enhanced chemical vapor deposition method. With the aid of X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR), the chemical bonding configuration, thermal stability and resistance to water of the films are explored

Oxygen Barrier Coating Deposited by Novel Plasma-enhanced Chemical Vapor Deposition

DEFF Research Database (Denmark)

Jiang, Juan; Benter, M.; Taboryski, Rafael Jozef

2010-01-01

We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source. This confi......We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source...... effect of single-layer coatings deposited under different reaction conditions was studied. The coating thickness and the carbon content in the coatings were found to be the critical parameters for the barrier property. The novel barrier coating was applied on different polymeric materials...

Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen

Science.gov (United States)

Opila, Elizabeth J.

1994-01-01

The oxidation kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen (P(sub H2O) = 0.1 atm) at temperatures between 1200 C and 1400 C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the oxidation kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation kinetics were examined in terms of the Deal and Grove model for oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high-purity Al2O3 reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium alumino-silicate scales.

Tandem solar cells deposited using hot-wire chemical vapor deposition

NARCIS (Netherlands)

Veen, M.K. van

2003-01-01

In this thesis, the application of the hot-wire chemical vapor deposition (HWCVD) technique for the deposition of silicon thin films is described. The HWCVD technique is based on the dissociation of silicon-containing gasses at the catalytic surface of a hot filament. Advantages of this technique

Achieving uniform layer deposition by atmospheric-pressure plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Lee, Jae-Ok [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Kang, Woo Seok, E-mail: kang@kimm.re.kr [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Department of Environment & Energy Mechanical Engineering, University of Science & Technology (UST), Daejeon 305-350 (Korea, Republic of); Hur, Min; Lee, Jin Young [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Song, Young-Hoon [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Department of Environment & Energy Mechanical Engineering, University of Science & Technology (UST), Daejeon 305-350 (Korea, Republic of)

2015-12-31

This work investigates the use of plasma-enhanced chemical vapor deposition under atmospheric pressure for achieving uniform layer formation. Electrical and optical measurements demonstrated that the counterbalance between oxygen and precursors maintained the homogeneous discharge mode, while creating intermediate species for layer deposition. Several steps of the deposition process of the layers, which were processed on a stationary stage, were affected by flow stream and precursor depletion. This study showed that by changing the flow streamlines using substrate stage motion uniform layer deposition under atmospheric pressure can be achieved. - Highlights: • Zirconium oxide was deposited by atmospheric-pressure plasma-enhanced chemical vapor deposition. • Homogeneous plasma was maintained by counterbalancing between discharge gas and precursors. • Several deposition steps were observed affected by the gas flow stream and precursor depletion. • Thin film layer was uniformly grown when the substrate underwent a sweeping motion.

Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

Science.gov (United States)

Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

2017-03-01

Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

Chemical Vapor Transport Deposition of Molybdenum Disulfide Layers Using H2O Vapor as the Transport Agent

Directory of Open Access Journals (Sweden)

Shichao Zhao

2018-02-01

Full Text Available Molybdenum disulfide (MoS2 layers show excellent optical and electrical properties and have many potential applications. However, the growth of high-quality MoS2 layers is a major bottleneck in the development of MoS2-based devices. In this paper, we report a chemical vapor transport deposition method to investigate the growth behavior of monolayer/multi-layer MoS2 using water (H2O as the transport agent. It was shown that the introduction of H2O vapor promoted the growth of MoS2 by increasing the nucleation density and continuous monolayer growth. Moreover, the growth mechanism is discussed.

Comparison of a model vapor deposited glass films to equilibrium glass films

Science.gov (United States)

Flenner, Elijah; Berthier, Ludovic; Charbonneau, Patrick; Zamponi, Francesco

Vapor deposition of particles onto a substrate held at around 85% of the glass transition temperature can create glasses with increased density, enthalpy, kinetic stability, and mechanical stability compared to an ordinary glass created by cooling. It is estimated that an ordinary glass would need to age thousands of years to reach the kinetic stability of a vapor deposited glass, and a natural question is how close to the equilibrium is the vapor deposited glass. To understand the process, algorithms akin to vapor deposition are used to create simulated glasses that have a higher kinetic stability than their annealed counterpart, although these glasses may not be well equilibrated either. Here we use novel models optimized for a swap Monte Carlo algorithm in order to create equilibrium glass films and compare their properties with those of glasses obtained from vapor deposition algorithms. This approach allows us to directly assess the non-equilibrium nature of vapor-deposited ultrastable glasses. Simons Collaboration on Cracking the Glass Problem and NSF Grant No. DMR 1608086.

Selective metal-vapor deposition on solvent evaporated polymer surfaces

Energy Technology Data Exchange (ETDEWEB)

Yamaguchi, Koji; Tsujioka, Tsuyoshi, E-mail: tsujioka@cc.osaka-kyoiku.ac.jp

2015-12-31

We report a selective metal-vapor deposition phenomenon based on solvent printing and evaporation on polymer surfaces and propose a method to prepare fine metal patterns using maskless vacuum deposition. Evaporation of the solvent molecules from the surface caused large free volumes between surface polymer chains and resulted in high mobility of the chains, enhancing metal-vapor atom desorption from the surface. This phenomenon was applied to prepare metal patterns on the polymer surface using solvent printing and maskless metal vacuum deposition. Metal patterns with high resolution of micron scale were obtained for various metal species and semiconductor polymer substrates including poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] and poly(3-hexylthiophene-2,5-diyl). - Highlights: • Selective metal-vapor deposition using solvent evaporation on polymer was attained. • Metal patterns with high resolution were obtained for various metal species. • This method can be applied to achieve fine metal-electrodes for polymer electronics.

Effect of Water Vapor on High-Temperature Corrosion under Conditions Mimicking Biomass Firing

DEFF Research Database (Denmark)

Okoro, Sunday Chukwudi; Montgomery, Melanie; Jappe Frandsen, Flemming

2015-01-01

The variable flue gas composition in biomass-fired plants, among other parameters, contributes to the complexityof high-temperature corrosion of materials. Systematic parameter studies are thus necessary to understand the underlyingcorrosion mechanisms. This paper investigates the effect of water...... (H2O) vapor content in the flue gas on the high-temperaturecorrosion of austenitic stainless steel (TP 347H FG) under laboratory conditions, to improve the understanding of corrosionmechanisms. Deposit-coated and deposit-free samples were isothermally exposed for 72 h in a synthetic flue gas...... previouslyreported findings suggest that an increase in the water vapor content will cause competitive adsorption on active sites....

Advanced deposition model for thermal activated chemical vapor deposition

Science.gov (United States)

Cai, Dang

Thermal Activated Chemical Vapor Deposition (TACVD) is defined as the formation of a stable solid product on a heated substrate surface from chemical reactions and/or dissociation of gaseous reactants in an activated environment. It has become an essential process for producing solid film, bulk material, coating, fibers, powders and monolithic components. Global market of CVD products has reached multi billions dollars for each year. In the recent years CVD process has been extensively used to manufacture semiconductors and other electronic components such as polysilicon, AlN and GaN. Extensive research effort has been directed to improve deposition quality and throughput. To obtain fast and high quality deposition, operational conditions such as temperature, pressure, fluid velocity and species concentration and geometry conditions such as source-substrate distance need to be well controlled in a CVD system. This thesis will focus on design of CVD processes through understanding the transport and reaction phenomena in the growth reactor. Since the in situ monitor is almost impossible for CVD reactor, many industrial resources have been expended to determine the optimum design by semi-empirical methods and trial-and-error procedures. This approach has allowed the achievement of improvements in the deposition sequence, but begins to show its limitations, as this method cannot always fulfill the more and more stringent specifications of the industry. To resolve this problem, numerical simulation is widely used in studying the growth techniques. The difficulty of numerical simulation of TACVD crystal growth process lies in the simulation of gas phase and surface reactions, especially the latter one, due to the fact that very limited kinetic information is available in the open literature. In this thesis, an advanced deposition model was developed to study the multi-component fluid flow, homogeneous gas phase reactions inside the reactor chamber, heterogeneous surface

Copper-vapor-catalyzed chemical vapor deposition of graphene on dielectric substrates

Science.gov (United States)

Yang, Chao; Wu, Tianru; Wang, Haomin; Zhang, Xuefu; Shi, Zhiyuan; Xie, Xiaoming

2017-07-01

Direct synthesis of high-quality graphene on dielectric substrates is important for its application in electronics. In this work, we report the process of copper-vapor-catalyzed chemical vapor deposition of high-quality and large graphene domains on various dielectric substrates. The copper vapor plays a vital role on the growth of transfer-free graphene. Both single-crystal domains that are much larger than previous reports and high-coverage graphene films can be obtained by adjusting the growth duration. The quality of the obtained graphene was verified to be comparable with that of graphene grown on Cu foil. The progress reported in this work will aid the development of the application of transfer-free graphene in the future.

Atmospheric pressure plasma enhanced chemical vapor deposition of zinc oxide and aluminum zinc oxide

International Nuclear Information System (INIS)

Johnson, Kyle W.; Guruvenket, Srinivasan; Sailer, Robert A.; Ahrenkiel, S. Phillip; Schulz, Douglas L.

2013-01-01

Zinc oxide (ZnO) and aluminum-doped zinc oxide (AZO) thin films were deposited via atmospheric pressure plasma enhanced chemical vapor deposition. A second-generation precursor, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N′-diethylethylenediamine) zinc, exhibited significant vapor pressure and good stability at one atmosphere where a vaporization temperature of 110 °C gave flux ∼ 7 μmol/min. Auger electron spectroscopy confirmed that addition of H 2 O to the carrier gas stream mitigated F contamination giving nearly 1:1 metal:oxide stoichiometries for both ZnO and AZO with little precursor-derived C contamination. ZnO and AZO thin film resistivities ranged from 14 to 28 Ω·cm for the former and 1.1 to 2.7 Ω·cm for the latter. - Highlights: • A second generation precursor was utilized for atmospheric pressure film growth. • Addition of water vapor to the carrier gas stream led to a marked reduction of ZnF 2 . • Carbonaceous contamination from the precursor was minimal

Enthalpy and high temperature relaxation kinetics of stable vapor-deposited glasses of toluene

International Nuclear Information System (INIS)

Bhattacharya, Deepanjan; Sadtchenko, Vlad

2014-01-01

Stable non-crystalline toluene films of micrometer and nanometer thicknesses were grown by vapor deposition at distinct rates and probed by fast scanning calorimetry. Fast scanning calorimetry is shown to be extremely sensitive to the structure of the vapor-deposited phase and was used to characterize simultaneously its kinetic stability and its thermodynamic properties. According to our analysis, transformation of vapor-deposited samples of toluene during heating with rates in excess 10 5 K s −1 follows the zero-order kinetics. The transformation rate correlates strongly with the initial enthalpy of the sample, which increases with the deposition rate according to sub-linear law. Analysis of the transformation kinetics of vapor-deposited toluene films of various thicknesses reveal a sudden increase in the transformation rate for films thinner than 250 nm. The change in kinetics seems to correlate with the surface roughness scale of the substrate. The implications of these findings for the formation mechanism and structure of vapor-deposited stable glasses are discussed

Molecular Models for DSMC Simulations of Metal Vapor Deposition

OpenAIRE

Venkattraman, A; Alexeenko, Alina A

2010-01-01

The direct simulation Monte Carlo (DSMC) method is applied here to model the electron‐beam (e‐beam) physical vapor deposition of copper thin films. A suitable molecular model for copper‐copper interactions have been determined based on comparisons with experiments for a 2D slit source. The model for atomic copper vapor is then used in axi‐symmetric DSMC simulations for analysis of a typical e‐beam metal deposition system with a cup crucible. The dimensional and non‐dimensional mass fluxes obt...

Initiated chemical vapor deposition of pH responsive poly(2-diisopropylamino)ethyl methacrylate thin films

Energy Technology Data Exchange (ETDEWEB)

Karaman, Mustafa, E-mail: karamanm@selcuk.edu.tr [Department of Chemical Engineering, Selcuk University (Turkey); Advanced Technology Research and Application Center, Selcuk University (Turkey); Cabuk, Nihat [Department of Chemical Engineering, Selcuk University (Turkey)

2012-08-31

Poly(2-(diisopropylamino)ethyl methacrylate) (PDPAEMA) thin films were deposited on low temperature substrates by initiated chemical vapor deposition (iCVD) method using tertbutyl peroxide as an initiator. Very high deposition rates up to 38 nm/min were observed at low filament temperatures due to the use of the initiator. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy show the formation of PDPAEMA films with high retention of tertiary amine functionality which is responsible for pH induced changes in the wetting behavior of the surfaces. As-deposited PDPAEMA thin films on flat Si surface showed a reversible switching of water contact angle values between 87 Degree-Sign and 28 Degree-Sign ; after successive treatments of high and low pH water solutions, respectively. Conformal and non-damaging nature of iCVD allowed to functionalize fragile and rough electrospun poly(methyl methacrylate) fiber mat surfaces by PDPAEMA, which creates a surface with a switching behavior between superhydrophobic and approaching superhydrophilic with contact angle values of 155 {+-} 3 Degree-Sign and 22 {+-} 5 Degree-Sign , respectively. - Highlights: Black-Right-Pointing-Pointer Poly(2-diisopropylaminoethyl methacrylate) thin films were deposited by a dry process. Black-Right-Pointing-Pointer Initiated chemical vapor deposition can produce thin films on fragile substrates. Black-Right-Pointing-Pointer We report a reversible pH-induced transition from hydrophilic to super-hydrophobic.

Low-pressure chemical vapor deposition as a tool for deposition of thin film battery materials

NARCIS (Netherlands)

Oudenhoven, J.F.M.; Dongen, van T.; Niessen, R.A.H.; Croon, de M.H.J.M.; Notten, P.H.L.

2009-01-01

Low Pressure Chemical Vapor Deposition was utilized for the deposition of LiCoO2 cathode materials for all-solid-state thin-film micro-batteries. To obtain insight in the deposition process, the most important process parameters were optimized for the deposition of crystalline electrode films on

Understanding the chemical vapor deposition of diamond: recent progress

International Nuclear Information System (INIS)

Butler, J E; Mankelevich, Y A; Cheesman, A; Ma, Jie; Ashfold, M N R

2009-01-01

In this paper we review and provide an overview to the understanding of the chemical vapor deposition (CVD) of diamond materials with a particular focus on the commonly used microwave plasma-activated chemical vapor deposition (MPCVD). The major topics covered are experimental measurements in situ to diamond CVD reactors, and MPCVD in particular, coupled with models of the gas phase chemical and plasma kinetics to provide insight into the distribution of critical chemical species throughout the reactor, followed by a discussion of the surface chemical process involved in diamond growth.

Macroscopic modeling for heat and water vapor transfer in dry snow by homogenization.

Science.gov (United States)

Calonne, Neige; Geindreau, Christian; Flin, Frédéric

2014-11-26

Dry snow metamorphism, involved in several topics related to cryospheric sciences, is mainly linked to heat and water vapor transfers through snow including sublimation and deposition at the ice-pore interface. In this paper, the macroscopic equivalent modeling of heat and water vapor transfers through a snow layer was derived from the physics at the pore scale using the homogenization of multiple scale expansions. The microscopic phenomena under consideration are heat conduction, vapor diffusion, sublimation, and deposition. The obtained macroscopic equivalent model is described by two coupled transient diffusion equations including a source term arising from phase change at the pore scale. By dimensional analysis, it was shown that the influence of such source terms on the overall transfers can generally not be neglected, except typically under small temperature gradients. The precision and the robustness of the proposed macroscopic modeling were illustrated through 2D numerical simulations. Finally, the effective vapor diffusion tensor arising in the macroscopic modeling was computed on 3D images of snow. The self-consistent formula offers a good estimate of the effective diffusion coefficient with respect to the snow density, within an average relative error of 10%. Our results confirm recent work that the effective vapor diffusion is not enhanced in snow.

Low-Temperature Process for Atomic Layer Chemical Vapor Deposition of an Al2O3 Passivation Layer for Organic Photovoltaic Cells.

Science.gov (United States)

Kim, Hoonbae; Lee, Jihye; Sohn, Sunyoung; Jung, Donggeun

2016-05-01

Flexible organic photovoltaic (OPV) cells have drawn extensive attention due to their light weight, cost efficiency, portability, and so on. However, OPV cells degrade quickly due to organic damage by water vapor or oxygen penetration when the devices are driven in the atmosphere without a passivation layer. In order to prevent damage due to water vapor or oxygen permeation into the devices, passivation layers have been introduced through methods such as sputtering, plasma enhanced chemical vapor deposition, and atomic layer chemical vapor deposition (ALCVD). In this work, the structural and chemical properties of Al2O3 films, deposited via ALCVD at relatively low temperatures of 109 degrees C, 200 degrees C, and 300 degrees C, are analyzed. In our experiment, trimethylaluminum (TMA) and H2O were used as precursors for Al2O3 film deposition via ALCVD. All of the Al2O3 films showed very smooth, featureless surfaces without notable defects. However, we found that the plastic flexible substrate of an OPV device passivated with 300 degrees C deposition temperature was partially bended and melted, indicating that passivation layers for OPV cells on plastic flexible substrates need to be formed at temperatures lower than 300 degrees C. The OPV cells on plastic flexible substrates were passivated by the Al2O3 film deposited at the temperature of 109 degrees C. Thereafter, the photovoltaic properties of passivated OPV cells were investigated as a function of exposure time under the atmosphere.

Controlling the resistivity gradient in chemical vapor deposition-deposited aluminum-doped zinc oxide

NARCIS (Netherlands)

Ponomarev, M. V.; Verheijen, M. A.; Keuning, W.; M. C. M. van de Sanden,; Creatore, M.

2012-01-01

Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO: Al layers by focusing on the control

Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Mohamed Shuaib Mohamed Saheed

2014-01-01

Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

Plasma Spray-Physical Vapor Deposition (PS-PVD) of Ceramics for Protective Coatings

Science.gov (United States)

Harder, Bryan J.; Zhu, Dongming

2011-01-01

In order to generate advanced multilayer thermal and environmental protection systems, a new deposition process is needed to bridge the gap between conventional plasma spray, which produces relatively thick coatings on the order of 125-250 microns, and conventional vapor phase processes such as electron beam physical vapor deposition (EB-PVD) which are limited by relatively slow deposition rates, high investment costs, and coating material vapor pressure requirements. The use of Plasma Spray - Physical Vapor Deposition (PS-PVD) processing fills this gap and allows thin (deposited and multilayer coatings of less than 100 microns to be generated with the flexibility to tailor microstructures by changing processing conditions. Coatings of yttria-stabilized zirconia (YSZ) were applied to NiCrAlY bond coated superalloy substrates using the PS-PVD coater at NASA Glenn Research Center. A design-of-experiments was used to examine the effects of process variables (Ar/He plasma gas ratio, the total plasma gas flow, and the torch current) on chamber pressure and torch power. Coating thickness, phase and microstructure were evaluated for each set of deposition conditions. Low chamber pressures and high power were shown to increase coating thickness and create columnar-like structures. Likewise, high chamber pressures and low power had lower growth rates, but resulted in flatter, more homogeneous layers

Directed Vapor Deposition: Low Vacuum Materials Processing Technology

National Research Council Canada - National Science Library

Groves, J. F; Mattausch, G; Morgner, H; Hass, D. D; Wadley, H. N

2000-01-01

Directed vapor deposition (DVD) is a recently developed electron beam-based evaporation technology designed to enhance the creation of high performance thick and thin film coatings on small area surfaces...

Research on chemical vapor deposition processes for advanced ceramic coatings

Science.gov (United States)

Rosner, Daniel E.

1993-01-01

Our interdisciplinary background and fundamentally-oriented studies of the laws governing multi-component chemical vapor deposition (VD), particle deposition (PD), and their interactions, put the Yale University HTCRE Laboratory in a unique position to significantly advance the 'state-of-the-art' of chemical vapor deposition (CVD) R&D. With NASA-Lewis RC financial support, we initiated a program in March of 1988 that has led to the advances described in this report (Section 2) in predicting chemical vapor transport in high temperature systems relevant to the fabrication of refractory ceramic coatings for turbine engine components. This Final Report covers our principal results and activities for the total NASA grant of $190,000. over the 4.67 year period: 1 March 1988-1 November 1992. Since our methods and the technical details are contained in the publications listed (9 Abstracts are given as Appendices) our emphasis here is on broad conclusions/implications and administrative data, including personnel, talks, interactions with industry, and some known applications of our work.

Gas analysis during the chemical vapor deposition of carbon

International Nuclear Information System (INIS)

Lieberman, M.L.; Noles, G.T.

1973-01-01

Gas chromatographic analyses were performed during the chemical vapor deposition of carbon in both isothermal and thermal gradient systems. Such data offer insight into the gas phase processes which occur during deposition and the interrelations which exist between gas composition, deposition rate, and resultant structure of the deposit. The results support a carbon CVD model presented previously. The application of chromatographic analysis to research, development, and full-scale facilities is shown. (U.S.)

Corrosion processes of physical vapor deposition-coated metallic implants.

Science.gov (United States)

Antunes, Renato Altobelli; de Oliveira, Mara Cristina Lopes

2009-01-01

Protecting metallic implants from the harsh environment of physiological fluids is essential to guaranteeing successful long-term use in a patient's body. Chemical degradation may lead to the failure of an implant device in two different ways. First, metal ions may cause inflammatory reactions in the tissues surrounding the implant and, in extreme cases, these reactions may inflict acute pain on the patient and lead to loosening of the device. Therefore, increasing wear strength is beneficial to the performance of the metallic implant. Second, localized corrosion processes contribute to the nucleation of fatigue cracks, and corrosion fatigue is the main reason for the mechanical failure of metallic implants. Common biomedical alloys such as stainless steel, cobalt-chrome alloys, and titanium alloys are prone to at least one of these problems. Vapor-deposited hard coatings act directly to improve corrosion, wear, and fatigue resistances of metallic materials. The effectiveness of the corrosion protection is strongly related to the structure of the physical vapor deposition layer. The aim of this paper is to present a comprehensive review of the correlation between the structure of physical vapor deposition layers and the corrosion properties of metallic implants.

High Temperature Multilayer Environmental Barrier Coatings Deposited Via Plasma Spray-Physical Vapor Deposition

Science.gov (United States)

Harder, Bryan James; Zhu, Dongming; Schmitt, Michael P.; Wolfe, Douglas E.

2014-01-01

Si-based ceramic matrix composites (CMCs) require environmental barrier coatings (EBCs) in combustion environments to avoid rapid material loss. Candidate EBC materials have use temperatures only marginally above current technology, but the addition of a columnar oxide topcoat can substantially increase the durability. Plasma Spray-Physical Vapor Deposition (PS-PVD) allows application of these multilayer EBCs in a single process. The PS-PVD technique is a unique method that combines conventional thermal spray and vapor phase methods, allowing for tailoring of thin, dense layers or columnar microstructures by varying deposition conditions. Multilayer coatings were deposited on CMC specimens and assessed for durability under high heat flux and load. Coated samples with surface temperatures ranging from 2400-2700F and 10 ksi loads using the high heat flux laser rigs at NASA Glenn. Coating morphology was characterized in the as-sprayed condition and after thermomechanical loading using electron microscopy and the phase structure was tracked using X-ray diffraction.

Progress Toward Meeting NIF Specifications for Vapor Deposited Polyimide Ablator Coatings

International Nuclear Information System (INIS)

Letts, Stephan A.; Anthamatten, Mitchell; Buckley, Steven R.; Fearon, Evelyn; Nissen, April E.H.; Cook, Robert C.

2004-01-01

We are developing an evaporative coating technique for deposition of thick polyimide (PI) ablator layers on ICF targets. The PI coating technique utilizes stoichiometrically controlled fluxes from two Knudsen cell evaporators containing a dianhydride and a diamine to deposit a polyamic acid (PAA) coating. Heating the PAA coating to 300 deg. C converts the PAA coating to a polyimide. Coated shells are rough due to particles on the substrate mandrels and from damage to the coating caused by the agitation used to achieve a uniform coating. We have developed a smoothing process that exposes an initially rough PAA coated shell to solvent vapor using gas levitation. We found that after smoothing the coatings developed a number of wide (low-mode) defects. We have identified two major contributors to low-mode roughness: surface hydrolysis, and deformation during drying/curing. By minimizing air exposure prior to vapor smoothing, avoiding excess solvent sorption during vapor smoothing, and using slow drying we are able to deposit and vapor smooth coatings 160 μm thick with a surface roughness less than 20 nm RMS

Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

Science.gov (United States)

Papadimitropoulos, G; Davazoglou, D

2011-09-01

In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

Use of process indices for simplification of the description of vapor deposition systems

International Nuclear Information System (INIS)

Kajikawa, Yuya; Noda, Suguru; Komiyama, Hiroshi

2004-01-01

Vapor deposition is a complex process, including gas-phase, surface, and solid-phase phenomena. Because of the complexity of chemical and physical processes occurring in vapor deposition processes, it is difficult to form a comprehensive, fundamental understanding of vapor deposition and to control such systems for obtaining desirable structures and performance. To overcome this difficulty, we present a method for simplifying the complex description of such systems. One simplification method is to separate complex systems into multiple elements, and determine which of these are important elements. We call this method abridgement. The abridgement method retains only the dominant processes in a description of the system, and discards the others. Abridgement can be achieved by using process indices to evaluate the relative importance of the elementary processes. We describe the formulation and use of these process indices through examples of the growth of continuous films, initial deposition processes, and the formation of the preferred orientation of polycrystalline films. In this paper, we propose a method for representing complex vapor deposition processes as a set of simpler processes

Half-sandwich cobalt complexes in the metal-organic chemical vapor deposition process

Energy Technology Data Exchange (ETDEWEB)

Georgi, Colin [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Hapke, Marko; Thiel, Indre [Leibniz-Institut für Katalyse e.V. an der Universität Rostock (LIKAT), Albert-Einstein-Straße 29a, Rostock 18059 (Germany); Hildebrandt, Alexander [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Waechtler, Thomas; Schulz, Stefan E. [Fraunhofer Institute of Electronic Nano Systems (ENAS), Technologie-Campus 3, Chemnitz 09126 (Germany); Technische Universität Chemnitz, Center for Microtechnologies (ZfM), Chemnitz 09107 (Germany); Lang, Heinrich, E-mail: heinrich.lang@chemie.tu-chemnitz.de [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany)

2015-03-02

A series of cobalt half-sandwich complexes of type [Co(η{sup 5}-C{sub 5}H{sub 5})(L)(L′)] (1: L, L′ = 1,5-hexadiene; 2: L = P(OEt){sub 3}, L′ = H{sub 2}C=CHSiMe{sub 3}; 3: L = L′ = P(OEt){sub 3}) has been studied regarding their physical properties such as the vapor pressure, decomposition temperature and applicability within the metal-organic chemical vapor deposition (MOCVD) process, with a focus of the influence of the phosphite ligands. It could be shown that an increasing number of P(OEt){sub 3} ligands increases the vapor pressure and thermal stability of the respective organometallic compound. Complex 3 appeared to be a promising MOCVD precursor with a high vapor pressure and hence was deposited onto Si/SiO{sub 2} (100 nm) substrates. The resulting reflective layer is closed, dense and homogeneous, with a slightly granulated surface morphology. X-ray photoelectron spectroscopy (XPS) studies demonstrated the formation of metallic cobalt, cobalt phosphate, cobalt oxide and cobalt carbide. - Highlights: • Thermal studies and vapor pressure measurements of cobalt half-sandwich complexes was carried out. • Chemical vapor deposition with cobalt half-sandwich complexes is reported. • The use of Co-phosphites results in significant phosphorous-doped metallic layers.

What Good is Raman Water Vapor Lidar?

Science.gov (United States)

Whitman, David

2011-01-01

Raman lidar has been used to quantify water vapor in the atmosphere for various scientific studies including mesoscale meteorology and satellite validation. Now the international networks of NDACC and GRUAN have interest in using Raman water vapor lidar for detecting trends in atmospheric water vapor concentrations. What are the data needs for addressing these very different measurement challenges. We will review briefly the scientific needs for water vapor accuracy for each of these three applications and attempt to translate that into performance specifications for Raman lidar in an effort to address the question in the title of "What good is Raman water vapor Iidar."

Effect of vapor-phase oxygen on chemical vapor deposition growth of graphene

Science.gov (United States)

Terasawa, Tomo-o.; Saiki, Koichiro

2015-03-01

To obtain a large-area single-crystal graphene, chemical vapor deposition (CVD) growth on Cu is considered the most promising. Recently, the surface oxygen on Cu has been found to suppress the nucleation of graphene. However, the effect of oxygen in the vapor phase was not elucidated sufficiently. Here, we investigate the effect of O2 partial pressure (PO2) on the CVD growth of graphene using radiation-mode optical microscopy. The nucleation density of graphene decreases monotonically with PO2, while its growth rate reaches a maximum at a certain pressure. Our results indicate that PO2 is an important parameter to optimize in the CVD growth of graphene.

Remote plasma-enhanced metalorganic chemical vapor deposition of aluminum oxide thin films

NARCIS (Netherlands)

Volintiru, I.; Creatore, M.; Hemmen, van J.L.; Sanden, van de M.C.M.

2008-01-01

Aluminum oxide films were deposited using remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/trimethylaluminum mixtures. Initial studies by in situ spectroscopic ellipsometry demonstrated that the aluminum oxide films deposited at temperatures

Comparative X-ray photoelectron spectroscopy study of plasma enhanced chemical vapor deposition and micro pressure chemical vapor deposition of phosphorus silicate glass layers after rapid thermal annealing

International Nuclear Information System (INIS)

Beshkov, G.; Krastev, V.; Gogova, D.; Talik, E.; Adamies, M.

2008-01-01

In this paper the bonding state of Phosphorus Silicate Glass (PSG) layers obtained by two different technological approaches, i.e. in two types of reactors: Plasma Enhanced Chemical Vapor Deposition (PECVD) and Micro Pressure Chemical Vapor Deposition (MPCVD) are investigated employing XPS and AES. The PSG layers are deposited at 380 0 C and 420 0 C in corresponding reactors. XPS and AES analyses show that Si2p peak recorded from PECVD layers are not as expected at their position characteristics of silicon dioxide but instead they are at the characteristic of elemental silicon. Plasma enhancement during deposition leads to less oxidized and more inhomogeneous layer. After rapid thermal annealing the Si2p peak is situated at position characteristic of silicon dioxide. (authors)

Water vapor profiling using microwave radiometry

Science.gov (United States)

Wang, J. R.; Wilheit, T. T.

1988-01-01

Water vapor is one of the most important constituents in the Earth's atmosphere. Its spatial and temporal variations affect a wide spectrum of meteorological phenomena ranging from the formation of clouds to the development of severe storms. The passive microwave technique offers an excellent means for water vapor measurements. It can provide both day and night coverage under most cloud conditions. Two water vapor absorption features, at 22 and 183 GHz, were explored in the past years. The line strengths of these features differ by nearly two orders of magnitude. As a consequence, the techniques and the final products of water vapor measurements are also quite different. The research effort in the past few years was to improve and extend the retrieval algorithm to the measurements of water vapor profiles under cloudy conditions. In addition, the retrieval of total precipitable water using 183 GHz measurements, but in a manner analogous to the use of 22 GHz measurements, to increase measurement sensitivity for atmospheres of very low moisture content was also explored.

Chemical vapor deposited fiber coatings and chemical vapor infiltrated ceramic matrix composites

Energy Technology Data Exchange (ETDEWEB)

Kmetz, M.A.

1992-01-01

Conventional Chemical Vapor Deposition (CVD) and Organometallic Chemical Vapor Deposition (MOCVD) were employed to deposit a series of interfacial coatings on SiC and carbon yarn. Molybdenum, tungsten and chromium hexacarbonyls were utilized as precursors in a low temperature (350[degrees]C) MOCVD process to coat SiC yarn with Mo, W and Cr oxycarbides. Annealing studies performed on the MoOC and WOC coated SiC yarns in N[sub 2] to 1,000[degrees]C establish that further decomposition of the oxycarbides occurred, culminating in the formation of the metals. These metals were then found to react with Si to form Mo and W disilicide coatings. In the Cr system, heating in N[sub 2] above 800[degrees]C resulted in the formation of a mixture of carbides and oxides. Convention CVD was also employed to coat SiC and carbon yarn with C, Bn and a new interface designated BC (a carbon-boron alloy). The coated tows were then infiltrated with SiC, TiO[sub 2], SiO[sub 2] and B[sub 4]C by a chemical vapor infiltration process. The B-C coatings were found to provide advantageous interfacial properties over carbon and BN coatings in several different composite systems. The effectiveness of these different coatings to act as a chemically inert barrier layer and their relationship to the degree of interfacial debonding on the mechanical properties of the composites were examined. The effects of thermal stability and strength of the coated fibers and composites were also determined for several difference atmospheres. In addition, a new method for determining the tensile strength of the as-received and coated yarns was also developed. The coated fibers and composites were further characterized by AES, SEM, XPS, IR and X-ray diffraction analysis.

Vaporization of a mixed precursors in chemical vapor deposition for YBCO films

Science.gov (United States)

Zhou, Gang; Meng, Guangyao; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

1995-01-01

Single phase YBa2Cu3O7-delta thin films with T(c) values around 90 K are readily obtained by using a single source chemical vapor deposition technique with a normal precursor mass transport. The quality of the films is controlled by adjusting the carrier gas flow rate and the precursor feed rate.

Metal–organic covalent network chemical vapor deposition for gas separation

NARCIS (Netherlands)

Boscher, N.D.; Wang, M.; Perrotta, A.; Heinze, K.; Creatore, A.; Gleason, K.K.

2016-01-01

The chemical vapor deposition (CVD) polymerization of metalloporphyrin building units is demonstrated to provide an easily up-scalable one-step method toward the deposition of a new class of dense and defect-free metal–organic covalent network (MOCN) layers. The resulting hyper-thin and flexible

Vapor deposition in basaltic stalactites, Kilauea, Hawaii

Science.gov (United States)

Baird, A. K.; Mohrig, D. C.; Welday, E. E.

Basaltic stalacties suspended from the ceiling of a large lava tube at Kilauea, Hawaii, have totally enclosed vesicles whose walls are covered with euhedral FeTi oxide and silicate crystals. The walls of the vesicles and the exterior surfaces of stalactites are Fe and Ti enriched and Si depleted compared to common basalt. Minerals in vesicles have surface ornamentations on crystal faces which include alkali-enriched, aluminosilicate glass(?) hemispheres. No sulfide-, chloride-, fluoride-, phosphate- or carbonate-bearing minerals are present. Minerals in the stalactites must have formed by deposition from an iron oxide-rich vapor phase produced by the partial melting and vaporization of wall rocks in the tube.

Vapor deposition of large area NpO2 and UO2 deposits

International Nuclear Information System (INIS)

Adair, H.L.; Gibson, J.R.; Kobisk, E.H.; Dailey, J.M.

1976-01-01

Deposition of NpO 2 and UO 2 thin films over an area of 7.5 to 10 cm diam has become a routine operation in preparation of fission chamber plates. Vacuum evaporation or electroplating has been used for this purpose. The ''paint brush'' technique has been used as well; however, uniformity requirements normally eliminate this procedure. Vapor deposition in vacuum appears to be the most suitable technique for preparing NpO 2 and UO 2 deposits of >200 cm 2 . This paper describes the procedures used in preparing uniform large area deposits of NpO 2 (approximately 300 cm 2 ) and UO 2 (approximately 2000 cm 2 ) by vacuum evaporation using electron bombardment heating and several substrate motion and heating methods to achieve uniformity and adhesion

Analyses on Water Vapor Resource in Chengdu City

Science.gov (United States)

Liu, B.; Xiao, T.; Wang, C.; Chen, D.

2017-12-01

Chengdu is located in the Sichuan basin, and it is the most famous inland city in China. With suitable temperatures and rainfall, Chengdu is the most livable cities in China. With the development of urban economy and society, the population has now risen to 16 million, and it will up to 22 million in 2030. This will cause the city water resources demand, and the carrying capacity of water resources become more and more serious. In order to improve the contradiction between urban waterlogging and water shortage, sponge city planning was proposed by Chengdu government, and this is of great practical significance for promoting the healthy development of the city. Base on the reanalysis data from NCEP during 2007-2016, the characters of Water Vapor Resources was analyzed, and the main contents of this research are summarized as follows: The water vapor resource in Chengdu plain is more than that in Southeast China and less in Northwest China. The annual average water vapor resource is approximately 160 mm -320 mm, and the water vapor resource in summer can reach 3 times in winter. But the annual average precipitation in Chengdu is about 800 mm -1200 mm and it is far greater than the water vapor resource, this is because of the transport of water vapor. Using the formula of water vapor flux, the water vapor in Chengdu is comes from the west and the south, and the value is around 50kg/(ms). Base on the calculation of boundary vapor budget, the water vapor transport under 500hPa accounted for 97% of the total. Consider the water vapor transport, transformation and urban humidification effect, the Water Vapor Resource in Chengdu is 2500mm, and it can be used by artificial precipitation enhancement. Therefore, coordinated development of weather modification and sponge city construction, the shortage of water resources in Chengdu plain can be solved. Key words: Chengdu; Sponge city; Water vapor resource; Precipitation; Artificial precipitation enhancement Acknowledgements

Numerical simulation of the effects of dilution level, depth of inhalation, and smoke composition on nicotine vapor deposition during cigarette smoking.

Science.gov (United States)

Ingebrethsen, Bradley J

2006-12-01

A numerical model of an aerosol containing vaporizable nicotine depositing to the walls of a tube was developed and applied to simulate the vapor deposition of nicotine in a denuder tube and under conditions approximating those in the respiratory tract during mainstream cigarette smoke inhalation. The numerical model was validated by comparison to data for denuder tube collection of nicotine from the smoke of three types of cigarette differing in smoke acidity and nicotine volatility. Simulations predict that the absorption of water by aerosol particles inhibits nicotine vapor deposition to tube walls, and that increased temperature, decreased tube diameter, and increased dilution enhance nicotine vapor deposition rate. The combined effect of changing these four parameters to approximate the transition from conducting to gas exchange regions of the respiratory tract was a significant net increase in predicted nicotine vapor deposition rate. Comparisons of nicotine deposition rates between conditions in the conducting airways and those in the gas exchange region were informative with regard to reported nicotine retention measurements during human smoking. Reports that vaporizable nicotine can penetrate past the conducting airways, that nicotine can be retained at near 100% efficiency from mainstream smoke, and that cigarettes with differing acidity and nicotine volatility have similar nicotine uptake rates are all shown to be consistent with the results of the model simulations.

Distribution of tropical tropospheric water vapor

Science.gov (United States)

Sun, De-Zheng; Lindzen, Richard S.

1993-01-01

Utilizing a conceptual model for tropical convection and observational data for water vapor, the maintenance of the vertical distribution of the tropical tropospheric water vapor is discussed. While deep convection induces large-scale subsidence that constrains the turbulent downgradient mixing to within the convective boundary layer and effectively dries the troposphere through downward advection, it also pumps hydrometeors into the upper troposphere, whose subsequent evaporation appears to be the major source of moisture for the large-scale subsiding motion. The development of upper-level clouds and precipitation from these clouds may also act to dry the outflow, thus explaining the low relative humidity near the tropopause. A one-dimensional model is developed to simulate the mean vertical structure of water vapor in the tropical troposphere. It is also shown that the horizontal variation of water vapor in the tropical troposphere above the trade-wind boundary layer can be explained by the variation of a moisture source that is proportional to the amount of upper-level clouds. Implications for the nature of water vapor feedback in global warming are discussed.

Chemical vapor deposition (CVD) of uranium for alpha spectrometry

International Nuclear Information System (INIS)

Ramirez V, M. L.; Rios M, C.; Ramirez O, J.; Davila R, J. I.; Mireles G, F.

2015-09-01

The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

Preparation of membranes using solvent-less vapor deposition followed by in-situ polymerization

Science.gov (United States)

O'Brien, Kevin C [San Ramon, CA; Letts, Stephan A [San Ramon, CA; Spadaccini, Christopher M [Oakland, CA; Morse, Jeffrey C [Pleasant Hill, CA; Buckley, Steven R [Modesto, CA; Fischer, Larry E [Los Gatos, CA; Wilson, Keith B [San Ramon, CA

2010-07-13

A system of fabricating a composite membrane from a membrane substrate using solvent-less vapor deposition followed by in-situ polymerization. A first monomer and a second monomer are directed into a mixing chamber in a deposition chamber. The first monomer and the second monomer are mixed in the mixing chamber providing a mixed first monomer and second monomer. The mixed first monomer and second monomer are solvent-less vapor deposited onto the membrane substrate in the deposition chamber. The membrane substrate and the mixed first monomer and second monomer are heated to produce in-situ polymerization and provide the composite membrane.

Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

Science.gov (United States)

Lackey, Jr., Walter J.; Caputo, Anthony J.

1986-01-01

A chemical vapor deposition (CVD) process for preparing fiber-reinforced ceramic composites. A specially designed apparatus provides a steep thermal gradient across the thickness of a fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

A comparison of diamond growth rate using in-liquid and conventional plasma chemical vapor deposition methods

International Nuclear Information System (INIS)

Takahashi, Yoshiyuki; Toyota, Hiromichi; Nomura, Shinfuku; Mukasa, Shinobu; Inoue, Toru

2009-01-01

In order to make high-speed deposition of diamond effective, diamond growth rates for gas-phase microwave plasma chemical vapor deposition and in-liquid microwave plasma chemical vapor deposition are compared. A mixed gas of methane and hydrogen is used as the source gas for the gas-phase deposition, and a methanol solution of ethanol is used as the source liquid for the in-liquid deposition. The experimental system pressure is in the range of 60-150 kPa. While the growth rate of diamond increases as the pressure increases, the amount of input microwave energy per unit volume of diamond is 1 kW h/mm 3 regardless of the method used. Since the in-liquid deposition method provides a superior cooling effect through the evaporation of the liquid itself, a higher electric input power can be applied to the electrodes under higher pressure environments. The growth rate of in-liquid microwave plasma chemical vapor deposition process is found to be greater than conventional gas-phase microwave plasma chemical vapor deposition process under the same pressure conditions.

A comparison of diamond growth rate using in-liquid and conventional plasma chemical vapor deposition methods

Science.gov (United States)

Takahashi, Yoshiyuki; Toyota, Hiromichi; Nomura, Shinfuku; Mukasa, Shinobu; Inoue, Toru

2009-06-01

In order to make high-speed deposition of diamond effective, diamond growth rates for gas-phase microwave plasma chemical vapor deposition and in-liquid microwave plasma chemical vapor deposition are compared. A mixed gas of methane and hydrogen is used as the source gas for the gas-phase deposition, and a methanol solution of ethanol is used as the source liquid for the in-liquid deposition. The experimental system pressure is in the range of 60-150 kPa. While the growth rate of diamond increases as the pressure increases, the amount of input microwave energy per unit volume of diamond is 1 kW h/mm3 regardless of the method used. Since the in-liquid deposition method provides a superior cooling effect through the evaporation of the liquid itself, a higher electric input power can be applied to the electrodes under higher pressure environments. The growth rate of in-liquid microwave plasma chemical vapor deposition process is found to be greater than conventional gas-phase microwave plasma chemical vapor deposition process under the same pressure conditions.

Imparting passivity to vapor deposited magnesium alloys

Science.gov (United States)

Wolfe, Ryan C.

Magnesium has the lowest density of all structural metals. Utilization of low density materials is advantageous from a design standpoint, because lower weight translates into improved performance of engineered products (i.e., notebook computers are more portable, vehicles achieve better gas mileage, and aircraft can carry more payload). Despite their low density and high strength to weight ratio, however, the widespread implementation of magnesium alloys is currently hindered by their relatively poor corrosion resistance. The objective of this research dissertation is to develop a scientific basis for the creation of a corrosion resistant magnesium alloy. The corrosion resistance of magnesium alloys is affected by several interrelated factors. Among these are alloying, microstructure, impurities, galvanic corrosion effects, and service conditions, among others. Alloying and modification of the microstructure are primary approaches to controlling corrosion. Furthermore, nonequilibrium alloying of magnesium via physical vapor deposition allows for the formation of single-phase magnesium alloys with supersaturated concentrations of passivity-enhancing elements. The microstructure and surface morphology is also modifiable during physical vapor deposition through the variation of evaporation power, pressure, temperature, ion bombardment, and the source-to-substrate distance. Aluminum, titanium, yttrium, and zirconium were initially chosen as candidates likely to impart passivity on vapor deposited magnesium alloys. Prior to this research, alloys of this type have never before been produced, much less studied. All of these metals were observed to afford some degree of corrosion resistance to magnesium. Due to the especially promising results from nonequilibrium alloying of magnesium with yttrium and titanium, the ternary magnesium-yttrium-titanium system was investigated in depth. While all of the alloys are lustrous, surface morphology is observed under the scanning

RF-plasma vapor deposition of siloxane on paper. Part 1: Physical evolution of paper surface

Science.gov (United States)

Sahin, Halil Turgut

2013-01-01

An alternative, new approach to improve the hydrophobicity and barrier properties of paper was evaluated by radio-frequency (RF) plasma octamethylcyclotetrasiloxane (OMCTSO) vapor treatment. The interaction between OMCTSO and paper, causing the increased hydophobicity, is likely through covalent bonding. The deposited thin silicone-like polymeric layer from OMCTSO plasma treatment possessed desirable hydrophobic properties. The SEM micrographs showed uniformly distributed grainy particles with various shapes on the paper surface. Deposition of the silicone polymer-like layer with the plasma treatment affects the distribution of voids in the network structure and increases the barrier against water intake and air. The water absorptivity was reduced by 44% for the OMCTSO plasma treated sheet. The highest resistance to air flow was an approximately 41% lower air permeability than virgin paper.

One-step microwave plasma enhanced chemical vapor deposition (MW-PECVD) for transparent superhydrophobic surface

Science.gov (United States)

Thongrom, Sukrit; Tirawanichakul, Yutthana; Munsit, Nantakan; Deangngam, Chalongrat

2018-02-01

We demonstrate a rapid and environmental friendly fabrication technique to produce optically clear superhydrophobic surfaces using poly (dimethylsiloxane) (PDMS) as a sole coating material. The inert PDMS chain is transformed into a 3-D irregular solid network through microwave plasma enhanced chemical vapor deposition (MW-PECVD) process. Thanks to high electron density in the microwave-activated plasma, coating can be done in just a single step with rapid deposition rate, typically much shorter than 10 s. Deposited layers show excellent superhydrophobic properties with water contact angles of ∼170° and roll-off angles as small as ∼3°. The plasma-deposited films can be ultrathin with thicknesses under 400 nm, greatly diminishing the optical loss. Moreover, with appropriate coating conditions, the coating layer can even enhance the transmission over the entire visible spectrum due to a partial anti-reflection effect.

Cumulus convection and the terrestrial water-vapor distribution

Science.gov (United States)

Donner, Leo J.

1988-01-01

Cumulus convection plays a significant role in determining the structure of the terrestrial water vapor field. Cumulus convection acts directly on the moisture field by condensing and precipitating water vapor and by redistributing water vapor through cumulus induced eddy circulations. The mechanisms by which cumulus convection influences the terrestrial water vapor distribution is outlined. Calculations using a theory due to Kuo is used to illustrate the mechanisms by which cumulus convection works. Understanding of these processes greatly aids the ability of researchers to interpret the seasonal and spatial distribution of atmospheric water vapor by providing information on the nature of sources and sinks and the global circulation.

Modeling UTLS water vapor: Transport/Chemistry interactions

International Nuclear Information System (INIS)

Gulstad, Line

2005-01-01

This thesis was initially meant to be a study on the impact on chemistry and climate from UTLS water vapor. However, the complexity of the UTLS water vapor and its recent changes turned out to be a challenge by it self. In the light of this, the overall motivation for the thesis became to study the processes controlling UTLS water vapor and its changes. Water vapor is the most important greenhouse gas, involved in important climate feedback loops. Thus, a good understanding of the chemical and dynamical behavior of water vapor in the atmosphere is crucial for understanding the climate changes in the last century. Additionally, parts of the work was motivated by the development of a coupled climate chemistry model based on the CAM3 model coupled with the Chemical Transport Model Oslo CTM2. The future work will be concentrated on the UTLS water vapor impact on chemistry and climate. We are currently studying long term trends in UTLS water vapor, focusing on identification of the different processes involved in the determination of such trends. The study is based on natural as well as anthropogenic climate forcings. The ongoing work on the development of a coupled climate chemistry model will continue within our group, in collaboration with Prof. Wei-Chyung Wang at the State University of New York, Albany. Valuable contacts with observational groups are established during the work on this thesis. These collaborations will be continued focusing on continuous model validation, as well as identification of trends and new features in UTLS water vapor, and other tracers in this region. (Author)

Vapor deposition on doublet airfoil substrates: Control of coating thickness and microstructure

Energy Technology Data Exchange (ETDEWEB)

Rodgers, Theron M.; Zhao, Hengbei; Wadley, Haydn N. G., E-mail: haydn@virginia.edu [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., P.O. Box 400745, Charlottesville, Virginia 22904 (United States)

2015-11-15

Gas jet assisted vapor deposition processes for depositing coatings are conducted at higher pressures than conventional physical vapor deposition methods, and have shown promise for coating complex shaped substrates including those with non-line-of-sight (NLS) regions on their surface. These regions typically receive vapor atoms at a lower rate and with a wider incident angular distribution than substrate regions in line-of-sight (LS) of the vapor source. To investigate the coating of such substrates, the thickness and microstructure variation along the inner (curved) surfaces of a model doublet airfoil containing both LS and NLS regions has been investigated. Results from atomistic simulations and experiments confirm that the coating's thickness is thinner in flux-shadowed regions than in other regions for all the coating processes investigated. They also indicated that the coatings columnar microstructure and pore volume fraction vary with surface location through the LS to NLS transition zone. A substrate rotation strategy for optimizing the thickness over the entire doublet airfoil surface was investigated, and led to the identification of a process that resulted in only small variation of coating thickness, columnar growth angle, and pore volume fraction on all doublet airfoil surfaces.

Magmatic-vapor expansion and the formation of high-sulfidation gold deposits: Chemical controls on alteration and mineralization

Science.gov (United States)

Henley, R.W.; Berger, B.R.

2011-01-01

Large bulk-tonnage high-sulfidation gold deposits, such as Yanacocha, Peru, are the surface expression of structurally-controlled lode gold deposits, such as El Indio, Chile. Both formed in active andesite-dacite volcanic terranes. Fluid inclusion, stable isotope and geologic data show that lode deposits formed within 1500. m of the paleo-surface as a consequence of the expansion of low-salinity, low-density magmatic vapor with very limited, if any, groundwater mixing. They are characterized by an initial 'Sulfate' Stage of advanced argillic wallrock alteration ?? alunite commonly with intense silicification followed by a 'Sulfide' Stage - a succession of discrete sulfide-sulfosalt veins that may be ore grade in gold and silver. Fluid inclusions in quartz formed during wallrock alteration have homogenization temperatures between 100 and over 500 ??C and preserve a record of a vapor-rich environment. Recent data for El Indio and similar deposits show that at the commencement of the Sulfide Stage, 'condensation' of Cu-As-S sulfosalt melts with trace concentrations of Sb, Te, Bi, Ag and Au occurred at > 600 ??C following pyrite deposition. Euhedral quartz crystals were simultaneously deposited from the vapor phase during crystallization of the vapor-saturated melt occurs to Fe-tennantite with progressive non-equilibrium fractionation of heavy metals between melt-vapor and solid. Vugs containing a range of sulfides, sulfosalts and gold record the changing composition of the vapor. Published fluid inclusion and mineralogical data are reviewed in the context of geological relationships to establish boundary conditions through which to trace the expansion of magmatic vapor from source to surface and consequent alteration and mineralization. Initially heat loss from the vapor is high resulting in the formation of acid condensate permeating through the wallrock. This Sulfate Stage alteration effectively isolates the expansion of magmatic vapor in subsurface fracture arrays

Chemically vapor deposited coatings for multibarrier containment of nuclear wastes

International Nuclear Information System (INIS)

Rusin, J.M.; Shade, J.W.; Kidd, R.W.; Browning, M.F.

1981-01-01

Chemical vapor deposition (CVD) was selected as a feasible method to coat ceramic cores, since the technology has previously been demonstrated for high-temperature gas-cooled reactor (HTGR) fuel particles. CVD coatings, including SiC, PyC (pyrolytic carbon), SiO 2 , and Al 2 O 3 were studied. This paper will discuss the development and characterization of PyC and Al 2 O 3 CVD coatings on supercalcine cores. Coatings were applied to 2 mm particles in either fluidized or vibrating beds. The PyC coating was deposited in a fluidized bed with ZrO 2 diluent from C 2 H 2 at temperatures between 1100 and 1200 0 C. The Al 2 O 3 coatings were deposited in a vibrated bed by a two-stage process to minimize loss of PyC during the overcoating operation. This process involved applying 10 μm of Al 2 O 3 using water vapor hydrolysis of AlCl 3 and then switching to the more surface-controlled hydrolysis via the H 2 + CO 2 reaction (3CO 2 + 3H 2 + 2AlCl 3 = Al 2 O 3 + 6HCl + 3CO). Typically, 50 to 80 μm Al 2 O 3 coatings were applied over 30 to 40 μm PyC coatings. The coatings were evaluated by metallographic examination, PyC oxidation tests, and leach resistance. After air oxidation for 100 hours at 750 0 C, the duplex PyC/Al 2 O 3 coated particles exhibited a weight loss of 0.01 percent. Leach resistance is being determined for temperatures from 50 to 150 0 C in various solutions. Typical results are given for selected ions. The leach resistance of supercalcine cores is significantly improved by the application of PyC and/or Al 2 O 3 coatings

Facile synthesis of graphene on single mode fiber via chemical vapor deposition

International Nuclear Information System (INIS)

Zhang, C.; Man, B.Y.; Jiang, S.Z.; Yang, C.; Liu, M.; Chen, C.S.; Xu, S.C.; Feng, D.J.; Bi, D.; Liu, F.Y.; Qiu, H.W.

2014-01-01

Direct deposition of graphene film on the standard single mode fiber is offered using a Cu-vapor-assisted chemical vapor deposition system. The gas flow of H 2 and Ar before the growth process plays a crucial role for the direct deposition of the graphene film and the layers of the graphene can be controlled by the growth time. With a large gas flow, Cu atoms are carried off with the gas flow and hard to deposit on the surface of the single mode fiber before the growth process. Consequently, uniform graphene film is obtained in this case. On the contrary, with a lower one, Cu atoms is facile to deposit on the surface of the single mode fiber and form nanodots acting as active catalytic sites for the growth of carbon nanotubes. This method presents us a promising transfer-free technique for fabrication of the photonic applications.

Self-catalytic growth of tin oxide nanowires by chemical vapor deposition process

CSIR Research Space (South Africa)

Thabethe, BS

2013-01-01

Full Text Available The authors report on the synthesis of tin oxide (SnO(sub2)) nanowires by a chemical vapor deposition (CVD) process. Commercially bought SnO nanopowders were vaporized at 1050°C for 30 minutes with argon gas continuously passing through the system...

Communication: Disorder-suppressed vibrational relaxation in vapor-deposited high-density amorphous ice

Science.gov (United States)

Shalit, Andrey; Perakis, Fivos; Hamm, Peter

2014-04-01

We apply two-dimensional infrared spectroscopy to differentiate between the two polyamorphous forms of glassy water, low-density (LDA) and high-density (HDA) amorphous ices, that were obtained by slow vapor deposition at 80 and 11 K, respectively. Both the vibrational lifetime and the bandwidth of the 1-2 transition of the isolated OD stretch vibration of HDO in H2O exhibit characteristic differences when comparing hexagonal (Ih), LDA, and HDA ices, which we attribute to the different local structures - in particular the presence of interstitial waters in HDA ice - that cause different delocalization lengths of intermolecular phonon degrees of freedom. Moreover, temperature dependent measurements show that the vibrational lifetime closely follows the structural transition between HDA and LDA phases.

Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

Energy Technology Data Exchange (ETDEWEB)

Jun, Byung Hyuk; Kim, Chan Joong

2006-05-15

Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

Micro- and nano-surface structures based on vapor-deposited polymers

Directory of Open Access Journals (Sweden)

Hsien-Yeh Chen

2017-07-01

Full Text Available Vapor-deposition processes and the resulting thin polymer films provide consistent coatings that decouple the underlying substrate surface properties and can be applied for surface modification regardless of the substrate material and geometry. Here, various ways to structure these vapor-deposited polymer thin films are described. Well-established and available photolithography and soft lithography techniques are widely performed for the creation of surface patterns and microstructures on coated substrates. However, because of the requirements for applying a photomask or an elastomeric stamp, these techniques are mostly limited to flat substrates. Attempts are also conducted to produce patterned structures on non-flat surfaces with various maskless methods such as light-directed patterning and direct-writing approaches. The limitations for patterning on non-flat surfaces are resolution and cost. With the requirement of chemical control and/or precise accessibility to the linkage with functional molecules, chemically and topographically defined interfaces have recently attracted considerable attention. The multifunctional, gradient, and/or synergistic activities of using such interfaces are also discussed. Finally, an emerging discovery of selective deposition of polymer coatings and the bottom-up patterning approach by using the selective deposition technology is demonstrated.

Preparation of hafnium carbide by chemical vapor deposition

International Nuclear Information System (INIS)

Hertz, Dominique.

1974-01-01

Hard, adhesive coatings of single-phase hafnium carbide were obtained by chemical vapor reaction in an atmosphere containing hafnium tetrachloride, methane and a large excess of hydrogen. By varying the gas phase composition and temperature the zones of formation of the different solid phases were studied and the growth of elementary hafnium and carbon deposits evaluated separately. The results show that the mechanism of hafnium carbide deposition does not hardly involve phenomene of homogeneous-phase methane decomposition or tetrachloride reduction by hydrogen unless the atmosphere is very rich or very poor in methane with respect to tetrachloride. However, hydrogen acting inversely on these two reactions, affects the stoichiometry of the substance deposited. The methane decomposition reaction is fairly slow, the reaction leading to hafnium carbide deposition is faster and that of tetrachloride reduction by hydrogen is quite fast [fr

How deposition parameters control growth dynamics of nc-Si deposited by hot-wire chemical vapor deposition

International Nuclear Information System (INIS)

Moutinho, H.R.; To, B.; Jiang, C.-S.; Xu, Y.; Nelson, B.P.; Teplin, C.W.; Jones, K.M.; Perkins, J.; Al-Jassim, M.M.

2006-01-01

We studied the growth of silicon films deposited by hot-wire chemical vapor deposition under different values of filament current, substrate temperature, and hydrogen dilution ratio. The physical and electrical properties of the films were studied by Raman spectroscopy, x-ray diffraction, atomic force microscopy, conductive-atomic force microscopy, and transmission electron microscopy. There is an interdependence of the growth parameters, and films grown with different parameters can have similar structures. We discuss why this interdependence occurs and how it influences the properties of the deposited films, as well as the deposition rate. In general, the films have a complex structure, with a mixture of amorphous (220)-oriented crystalline and nanocrystalline phases present in most cases. The amount of each phase can be controlled by the variation of one or more of the growth parameters at a time

Influence of Molecular Shape on Molecular Orientation and Stability of Vapor-Deposited Organic Semiconductors

Science.gov (United States)

Walters, Diane M.; Johnson, Noah D.; Ediger, M. D.

Physical vapor deposition is commonly used to prepare active layers in organic electronics. Recently, it has been shown that molecular orientation and packing can be tuned by changing the substrate temperature during deposition, while still producing macroscopically homogeneous films. These amorphous materials can be highly anisotropic when prepared with low substrate temperatures, and they can exhibit exceptional kinetic stability; films retain their favorable packing when heated to high temperatures. Here, we study the influence of molecular shape on molecular orientation and stability. We investigate disc-shaped molecules, such as TCTA and m-MTDATA, nearly spherical molecules, such as Alq3, and linear molecules covering a broad range of aspect ratios, such as p-TTP and BSB-Cz. Disc-shaped molecules have preferential horizontal orientation when deposited at low substrate temperatures, and their orientation can be tuned by changing the substrate temperature. Alq3 forms stable, amorphous films that are optically isotropic when vapor deposited over a broad range of substrate temperatures. This work may guide the choice of material and deposition conditions for vapor-deposited films used in organic electronics and allow for more efficient devices to be fabricated.

Rapid synthesis of tantalum oxide dielectric films by microwave microwave-assisted atmospheric chemical vapor deposition

International Nuclear Information System (INIS)

Ndiege, Nicholas; Subramanian, Vaidyanathan; Shannon, Mark A.; Masel, Richard I.

2008-01-01

Microwave-assisted chemical vapor deposition has been used to generate high quality, high-k dielectric films on silicon at high deposition rates with film thicknesses varying from 50 nm to 110 μm using inexpensive equipment. Characterization of the post deposition products was performed by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Raman spectroscopy. Film growth was determined to occur via rapid formation and accumulation of tantalum oxide clusters from tantalum (v) ethoxide (Ta(OC 2 H 5 ) 5 ) vapor on the deposition surface

Vacuum distillation/vapor filtration water recovery

Science.gov (United States)

Honegger, R. J.; Neveril, R. B.; Remus, G. A.

1974-01-01

The development and evaluation of a vacuum distillation/vapor filtration (VD/VF) water recovery system are considered. As a functional model, the system converts urine and condensates waste water from six men to potable water on a steady-state basis. The system is designed for 180-day operating durations and for function on the ground, on zero-g aircraft, and in orbit. Preparatory tasks are summarized for conducting low gravity tests of a vacuum distillation/vapor filtration system for recovering water from urine.

Reduced water vapor transmission rates of low-temperature solution-processed metal oxide barrier films via ultraviolet annealing

Energy Technology Data Exchange (ETDEWEB)

Park, Seonuk; Jeong, Yong Jin; Baek, Yonghwa; Kim, Lae Ho; Jang, Jin Hyuk; Kim, Yebyeol [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of); An, Tae Kyu [Department of Polymer Science & Engineering, Korea National University of Transportation, 50 Daehak-Ro, Chungju (Korea, Republic of); Nam, Sooji, E-mail: sjnam15@etri.re.kr [Information Control Device Section, Electronics and Telecommunications Research Institute, Daejeon, 305-700 (Korea, Republic of); Kim, Se Hyun, E-mail: shkim97@yu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, North Gyeongsang 712-749 (Korea, Republic of); Jang, Jaeyoung, E-mail: jyjang15@hanyang.ac.kr [Department of Energy Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Park, Chan Eon, E-mail: cep@postech.ac.kr [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of)

2017-08-31

Highlights: • Sol-gel-derived aluminum oxide thin films were prepared using ultraviolet (UV) annealing. • UV irradiation dramatically promoted the densification of AlO{sub x} during the annealing stage, thereby forming a close-packed AlO{sub x} film. • The resulting AlO{sub x} films deposited on polymer substrates exhibited good water vapor blocking properties with low water vapor transmission rates (WVTRs). - Abstract: Here, we report the fabrication of low-temperature sol-gel-derived aluminum oxide (AlO{sub x}) films via ultraviolet (UV) annealing and the investigation of their water vapor blocking properties by measuring the water vapor transmission rates (WVTRs). The UV annealing process induced the formation of a dense metal-oxygen-metal bond (Al-O-Al structure) at low temperatures (<200 °C) that are compatible with commercial plastic substrates. The density of the UV-annealed AlO{sub x} thin film at 180 °C was comparable to that of AlO{sub x} thin films that have been thermally annealed at 350 °C. Furthermore, the UV-annealed AlO{sub x} thin films exhibited a high optical transparency in the visible region (>99%) and good electrical insulating properties (∼10{sup −7} A/cm{sup 2} at 2 MV/cm). Finally, we confirmed that a dense AlO{sub x} thin film was successfully deposited onto the plastic substrate via UV annealing at low temperatures, leading to a substantial reduction in the WVTRs. The Ca corrosion test was used to measure the WVTRs of AlO{sub x} thin films deposited onto polyethylene naphthalate or polyimide substrates, determined to be 0.0095 g m{sup −2} day{sup −1} (25 °C, 50% relative humidity) and 0.26 g m{sup −2} day{sup −1}, respectively.

Complete long-term corrosion protection with chemical vapor deposited graphene

DEFF Research Database (Denmark)

Yu, Feng; Camilli, Luca; Wang, Ting

2018-01-01

Despite numerous reports regarding the potential of graphene for corrosion protection, examples of chemical vapor deposited (CVD) graphene-based anticorrosive coatings able to provide long-term protection (i.e. several months) of metals have so far been absent. Here, we present a polymer-graphene......Despite numerous reports regarding the potential of graphene for corrosion protection, examples of chemical vapor deposited (CVD) graphene-based anticorrosive coatings able to provide long-term protection (i.e. several months) of metals have so far been absent. Here, we present a polymer......-graphene hybrid coating, comprising two single layers of CVD graphene sandwiched by three layers of polyvinyl butyral, which provides complete corrosion protection of commercial aluminum alloys even after 120 days of exposure to simulated seawater. The essential role played by graphene in the hybrid coating...

Water Vapor Remote Sensing Techniques: Radiometry and Solar Spectrometry

Science.gov (United States)

Somieski, A.; Buerki, B.; Cocard, M.; Geiger, A.; Kahle, H.-G.

The high variability of atmospheric water vapor content plays an important role in space geodesy, climatology and meteorology. Water vapor has a strong influence on transatmospheric satellite signals, the Earth's climate and thus the weather forecasting. Several remote sensing techniques have been developed for the determination of inte- grated precipitable water vapor (IPWV). The Geodesy and Geodynamics Lab (GGL) utilizes the methods of Water Vapor Radiometry and Solar Spectrometry to quantify the amount of tropospheric water vapor and its temporal variations. The Water Vapor Radiometer (WVR) measures the radiation intensity of the atmosphere in a frequency band ranging from 20 to 32 GHz. The Solar Atmospheric MOnitoring Spectrome- ter (SAMOS) of GGL is designed for high-resolution measurements of water vapor absorption lines using solar radiation. In the framework of the ESCOMPTE (ExpÊrience sur Site pour COntraindre les Mod- Éles de Pollution atmosphÊrique et de Transport d'Emissions) field campaign these instruments have been operated near Marseille in 2001. They have aquired a long time series of integrated precipitable water vapor content (IPWV). The accuracy of IPWV measured by WVR and SAMOS is 1 kg/m2. Furthermore meteorological data from radiosondes were used to calculate the IPWV in order to provide comparisons with the results of WVR and SAMOS. The methods of Water Vapor Radiometry and So- lar Spectrometry will be discussed and first preliminary results retrieved from WVR, SAMOS and radiosondes during the ESCOMPTE field campaign will be presented.

Kinetics of chemical vapor deposition of boron on molybdenum

International Nuclear Information System (INIS)

Tanaka, W.; Nakaanishi, N.; Kato, E.

1987-01-01

Experimental rate data of chemical vapor deposition of boron by reduction of boron trichloride with hydrogen are analyzed to determine the reaction mechanism. The reaction orders with respect to the partial pressures of hydrogen and boron trichloride are one half and one third, respectively. It has been found that the outer layer of a deposited film is Mo/sub 2/B/sub 5/ and the inner layer is MoB by the use of X-ray diffraction and EPMA line analysis

Advances in the chemical vapor deposition (CVD) of Tantalum

DEFF Research Database (Denmark)

Mugabi, James Atwoki; Eriksen, Søren; Christensen, Erik

2014-01-01

The chemical stability of tantalum in hot acidic media has made it a key material in the protection of industrial equipment from corrosion under such conditions. The Chemical Vapor Deposition of tantalum to achieve such thin corrosion resistant coatings is one of the most widely mentioned examples...

Fabrication of Vertically Aligned CNT Composite for Membrane Applications Using Chemical Vapor Deposition through In Situ Polymerization

Directory of Open Access Journals (Sweden)

Munir Mohammad

2013-01-01

Full Text Available We report the fabrication of vertically aligned carbon nanotubes (CNT composite using thermal chemical vapor deposition (CVD. A forest of vertically aligned CNTs was grown using catalytic CVD. Fluorocarbon polymer, films were deposited in the spaces between vertically aligned MWCNTs using thermal CVD apparatus developed in-house. The excessive polymer top layer was etched by exposing the sample to water plasma. Infrared spectroscopy confirmed the attachment of functional groups to CNTs. Alignment of CNTs, deposition of polymer and postetched specimens were analyzed by field emission scanning electron microscope (FE-SEM. Uniform distribution of monomodel vertically aligned CNTs embedded in the deposited polymer matrix was observed in the micrograph. Observed uniform distribution otherwise is not possible using conventional techniques such as spin coating.

Stress evaluation of chemical vapor deposited silicon dioxide films

International Nuclear Information System (INIS)

Maeda, Masahiko; Itsumi, Manabu

2002-01-01

Film stress of chemical vapor deposited silicon dioxide films was evaluated. All of the deposited films show tensile intrinsic stresses. Oxygen partial pressure dependence of the intrinsic stress is very close to that of deposition rate. The intrinsic stress increases with increasing the deposition rate under the same deposition temperature, and decreases with increasing substrate temperature. Electron spin resonance (ESR) active defects in the films were observed when the films were deposited at 380 deg. C and 450 deg. C. The ESR signal intensity decreases drastically with increasing deposition temperature. The intrinsic stress correlates very closely to the intensity of the ESR-active defects, that is, the films with larger intrinsic stress have larger ESR-active defects. It is considered that the intrinsic stress was generated because the voids caused by local bond disorder were formed during random network formation among the SiO 4 tetrahedra. This local bond disorder also causes the ESR-active defects

Monitoring tropospheric water vapor changes using radiosonde data

International Nuclear Information System (INIS)

Elliott, W.P.; Smith, M.E.; Angell, J.K.

1990-01-01

Significant increases in the water vapor content of the troposphere are expected to accompany temperature increases due to rising concentrations of the greenhouse gases. Thus it is important to follow changes in water vapor over time. There are a number of difficulties in developing a homogeneous data set, however, because of changes in radiosonde instrumentation and reporting practices. The authors report here on preliminary attempts to establish indices of water vapor which can be monitored. The precipitable water between the surface and 500 mb is the first candidate. They describe their method for calculating this quantity from radiosonde data for a network very similar to the network Angell uses for detecting temperature trends. Preliminary results suggest that the noise level is low enough to detect trends in water vapor at the individual stations. While a slight increase in global water vapor is hinted at in the data, and the data suggest there may have been a net transfer of water from the Southern Hemisphere to the Northern Hemisphere, these conclusions are tentative. The authors also discuss the future course of this investigation

Tritium-gas/water-vapor monitor. Tests and evaluation

International Nuclear Information System (INIS)

Jalbert, R.A.

1982-07-01

A tritium gas/water-vapor monitor was designed and built by the Health Physics Group at the Los Alamos National Laboratory. In its prototype configuration, the monitor took the shape of two separate instruments: a (total) tritium monitor and a water-vapor monitor. Both instruments were tested and evaluated. The tests of the (total) tritium monitor, basically an improved version of the standard flow-through ion-chamber instrument, are briefly reported here and more completely elsewhere. The tests of the water-vapor monitor indicated that the novel approach used to condense water vapor for scintillation counting has a number of serious drawbacks and that further development of the instrument is unwarranted

Development of Y-BA-CU-O Coated Conductor Using Metal Organic Chemical Vapor Deposition

National Research Council Canada - National Science Library

Selvamanickam, V

2003-01-01

.... The program includes a study of the a) influence of MOCVD processing conditions such as the flow rate of precursor vapors, precursor vaporization temperatures, oxygen partial pressure, reactor pressure, and the deposition temperature...

Water vapor retrieval over many surface types

Energy Technology Data Exchange (ETDEWEB)

Borel, C.C.; Clodius, W.C.; Johnson, J.

1996-04-01

In this paper we present a study of of the water vapor retrieval for many natural surface types which would be valuable for multi-spectral instruments using the existing Continuum Interpolated Band Ratio (CIBR) for the 940 nm water vapor absorption feature. An atmospheric code (6S) and 562 spectra were used to compute the top of the atmosphere radiance near the 940 nm water vapor absorption feature in steps of 2.5 nm as a function of precipitable water (PW). We derive a novel technique called ``Atmospheric Pre-corrected Differential Absorption`` (APDA) and show that APDA performs better than the CIBR over many surface types.

NASA Experiment on Tropospheric-Stratospheric Water Vapor Transport in the Intertropical Convergence Zone

Science.gov (United States)

Page, William A.

1982-01-01

transported somehow through the tropopause, the vapor pressure being controlled by the temperature at the tops of the clouds; the dryness of the stratosphere could be explained if most of the transport occurs in connection with very high clouds in regions with very high and cold tropopause. (3) Cumulo-nimbus anvils act as terrestrial-radiation shields allowing the ice particle temperatures near cloud tops to cool radiatively below the supersaturation point; this cooling would cause a vapor deposition on the ice particles which will settle out and thus act as water scavengers. The experiment was designed to collect information on these detailed physical processes near and above the tropopause in order to assess their importance and the role they play in controlling stratospheric water vapor humidity.

Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

Science.gov (United States)

Karamat, S.; Sonuşen, S.; Çelik, Ü.; Uysallı, Y.; Oral, A.

2016-04-01

In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH)2 for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and LiOH was ∼6 min and for NaOH and Ba(OH)2 it was ∼15 min. KOH and LiOH peeled off graphene very efficiently as compared to NaOH and Ba(OH)2 from the Pt electrode. In case of copper, the peeling time is ∼3-5 min. Different characterizations like optical microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy were done to analyze the as grown and transferred graphene samples.

Vapor-deposited non-crystalline phase vs ordinary glasses and supercooled liquids: Subtle thermodynamic and kinetic differences

International Nuclear Information System (INIS)

Bhattacharya, Deepanjan; Sadtchenko, Vlad

2015-01-01

Vapor deposition of molecules on a substrate often results in glassy materials of high kinetic stability and low enthalpy. The extraordinary properties of such glasses are attributed to high rates of surface diffusion during sample deposition, which makes it possible for constituents to find a configuration of much lower energy on a typical laboratory time scale. However, the exact nature of the resulting phase and the mechanism of its formation are not completely understood. Using fast scanning calorimetry technique, we show that out-of-equilibrium relaxation kinetics and possibly the enthalpy of vapor-deposited films of toluene and ethylbenzene, archetypical fragile glass formers, are distinct from those of ordinary supercooled phase even when the deposition takes place at temperatures above the ordinary glass softening transition temperatures. These observations along with the absolute enthalpy dependences on deposition temperatures support the conjecture that the vapor-deposition may result in formation of non-crystalline phase of unique structural, thermodynamic, and kinetic properties

Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

Directory of Open Access Journals (Sweden)

W. J. Liu

2016-01-01

Full Text Available We demonstrated a flash memory device with chemical-vapor-deposited graphene as a charge trapping layer. It was found that the average RMS roughness of block oxide on graphene storage layer can be significantly reduced from 5.9 nm to 0.5 nm by inserting a seed metal layer, which was verified by AFM measurements. The memory window is 5.6 V for a dual sweep of ±12 V at room temperature. Moreover, a reduced hysteresis at the low temperature was observed, indicative of water molecules or −OH groups between graphene and dielectric playing an important role in memory windows.

Water vapor movement in freezing aggregate base materials.

Science.gov (United States)

2014-06-01

The objectives of this research were to 1) measure the extent to which water vapor movement results in : water accumulation in freezing base materials; 2) evaluate the effect of soil stabilization on water vapor movement : in freezing base materials;...

Fabrication and evaluation of chemically vapor deposited tungsten heat pipe.

Science.gov (United States)

Bacigalupi, R. J.

1972-01-01

A network of lithium-filled tungsten heat pipes is being considered as a method of heat extraction from high temperature nuclear reactors. The need for material purity and shape versatility in these applications dictates the use of chemically vapor deposited (CVD) tungsten. Adaptability of CVD tungsten to complex heat pipe designs is shown. Deposition and welding techniques are described. Operation of two lithium-filled CVD tungsten heat pipes above 1800 K is discussed.

MgB2 thin films by hybrid physical-chemical vapor deposition

International Nuclear Information System (INIS)

Xi, X.X.; Pogrebnyakov, A.V.; Xu, S.Y.; Chen, K.; Cui, Y.; Maertz, E.C.; Zhuang, C.G.; Li, Qi; Lamborn, D.R.; Redwing, J.M.; Liu, Z.K.; Soukiassian, A.; Schlom, D.G.; Weng, X.J.; Dickey, E.C.; Chen, Y.B.; Tian, W.; Pan, X.Q.; Cybart, S.A.; Dynes, R.C.

2007-01-01

Hybrid physical-chemical vapor deposition (HPCVD) has been the most effective technique for depositing MgB 2 thin films. It generates high magnesium vapor pressures and provides a clean environment for the growth of high purity MgB 2 films. The epitaxial pure MgB 2 films grown by HPCVD show higher-than-bulk T c due to tensile strain in the films. The HPCVD films are the cleanest MgB 2 materials reported, allowing basic research, such as on magnetoresistance, that reveals the two-band nature of MgB 2 . The carbon-alloyed HPCVD films demonstrate record-high H c2 values promising for high magnetic field applications. The HPCVD films and multilayers have enabled the fabrication of high quality MgB 2 Josephson junctions

Communication: Surface-facilitated softening of ordinary and vapor-deposited glasses

Science.gov (United States)

Cubeta, Ulyana; Bhattacharya, Deepanjan; Sadtchenko, Vlad

2017-08-01

A common distinction between the ordinary glasses formed by melt cooling and the stable amorphous films formed by vapor deposition is the apparent mechanism of their devitrification. Using quasi-adiabatic, fast scanning calorimetry that is capable of heating rates in excess of 105 K s-1, we have investigated the softening kinetics of micrometer-scale, ordinary glass films of methylbenzene and 2-propanol. At the limit of high heating rates, the transformation mechanism of ordinary glasses is identical to that of their stable vapor-deposited counterparts. In both cases, softening is likely to begin at the sample surface and progress into its bulk via a transformation front. Furthermore, such a surface-facilitated mechanism complies with zero-order, Arrhenius rate law. The activation energy barriers for the softening transformation imply that the kinetics must be defined, at least in part, by the initial thermodynamic and structural state of the samples.

Physical vapor deposition of cubic boron nitride thin films

International Nuclear Information System (INIS)

Kester, D.J.

1991-01-01

Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

Development of amorphous silicon based EUV hardmasks through physical vapor deposition

Science.gov (United States)

De Silva, Anuja; Mignot, Yann; Meli, Luciana; DeVries, Scott; Xu, Yongan; Seshadri, Indira; Felix, Nelson M.; Zeng, Wilson; Cao, Yong; Phan, Khoi; Dai, Huixiong; Ngai, Christopher S.; Stolfi, Michael; Diehl, Daniel L.

2017-10-01

Extending extreme ultraviolet (EUV) single exposure patterning to its limits requires more than photoresist development. The hardmask film is a key contributor in the patterning stack that offers opportunities to enhance lithographic process window, increase pattern transfer efficiency, and decrease defectivity when utilizing very thin film stacks. This paper introduces the development of amorphous silicon (a-Si) deposited through physical vapor deposited (PVD) as an alternative to a silicon ARC (SiARC) or silicon-oxide-type EUV hardmasks in a typical trilayer patterning scheme. PVD offers benefits such as lower deposition temperature, and higher purity, compared to conventional chemical vapor deposition (CVD) techniques. In this work, sub-36nm pitch line-space features were resolved with a positive-tone organic chemically-amplified resist directly patterned on PVD a-Si, without an adhesion promotion layer and without pattern collapse. Pattern transfer into the underlying hardmask stack was demonstrated, allowing an evaluation of patterning metrics related to resolution, pattern transfer fidelity, and film defectivity for PVD a-Si compared to a conventional tri-layer patterning scheme. Etch selectivity and the scalability of PVD a-Si to reduce the aspect ratio of the patterning stack will also be discussed.

Chemical vapor deposition of refractory metals and ceramics III

International Nuclear Information System (INIS)

Gallois, B.M.; Lee, W.Y.; Pickering, M.A.

1995-01-01

The papers contained in this volume were originally presented at Symposium K on Chemical Vapor Deposition of Refractory Metals and Ceramics III, held at the Fall Meeting of the Materials Research Society in Boston, Massachusetts, on November 28--30, 1994. This symposium was sponsored by Morton International Inc., Advanced Materials, and by The Department of Energy-Oak Ridge National Laboratory. The purpose of this symposium was to exchange scientific information on the chemical vapor deposition (CVD) of metallic and ceramic materials. CVD technology is receiving much interest in the scientific community, in particular, to synthesize new materials with tailored chemical composition and physical properties that offer multiple functionality. Multiphase or multilayered films, functionally graded materials (FGMs), ''smart'' material structures and nanocomposites are some examples of new classes of materials being produced via CVD. As rapid progress is being made in many interdisciplinary research areas, this symposium is intended to provide a forum for reporting new scientific results and addressing technological issues relevant to CVD materials and processes. Thirty four papers have been processed separately for inclusion on the data base

Chemical vapor deposition of Si/SiC nano-multilayer thin films

International Nuclear Information System (INIS)

Weber, A.; Remfort, R.; Woehrl, N.; Assenmacher, W.; Schulz, S.

2015-01-01

Stoichiometric SiC films were deposited with the commercially available single source precursor Et_3SiH by classical thermal chemical vapor deposition (CVD) as well as plasma-enhanced CVD at low temperatures in the absence of any other reactive gases. Temperature-variable deposition studies revealed that polycrystalline films containing different SiC polytypes with a Si to carbon ratio of close to 1:1 are formed at 1000 °C in thermal CVD process and below 100 °C in the plasma-enhanced CVD process. The plasma enhanced CVD process enables the reduction of residual stress in the deposited films and offers the deposition on temperature sensitive substrates in the future. In both deposition processes the film thickness can be controlled by variation of the process parameters such as the substrate temperature and the deposition time. The resulting material films were characterized with respect to their chemical composition and their crystallinity using scanning electron microscope, energy dispersive X-ray spectroscopy (XRD), atomic force microscopy, X-ray diffraction, grazing incidence X-ray diffraction, secondary ion mass spectrometry and Raman spectroscopy. Finally, Si/SiC multilayers of up to 10 individual layers of equal thickness (about 450 nm) were deposited at 1000 °C using Et_3SiH and SiH_4. The resulting multilayers features amorphous SiC films alternating with Si films, which feature larger crystals up to 300 nm size as measured by transmission electron microscopy as well as by XRD. XRD features three distinct peaks for Si(111), Si(220) and Si(311). - Highlights: • Stoichiometric silicon carbide films were deposited from a single source precursor. • Thermal as well as plasma-enhanced chemical vapor deposition was used. • Films morphology, crystallinity and chemical composition were characterized. • Silicon/silicon carbide multilayers of up to 10 individual nano-layers were deposited.

Plasma-enhanced chemical vapor deposition of aluminum oxide using ultrashort precursor injection pulses

NARCIS (Netherlands)

Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.

2012-01-01

An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the

Chemical vapor deposition: A technique for applying protective coatings

Energy Technology Data Exchange (ETDEWEB)

Wallace, T.C. Sr.; Bowman, M.G.

1979-01-01

Chemical vapor deposition is discussed as a technique for applying coatings for materials protection in energy systems. The fundamentals of the process are emphasized in order to establish a basis for understanding the relative advantages and limitations of the technique. Several examples of the successful application of CVD coating are described. 31 refs., and 18 figs.

Eddy transport of water vapor in the Martian atmosphere

Science.gov (United States)

Murphy, J. R.; Haberle, Robert M.

1993-01-01

Viking orbiter measurements of the Martian atmosphere suggest that the residual north polar water-ice cap is the primary source of atmospheric water vapor, which appears at successively lower northern latitudes as the summer season progresses. Zonally symmetric studies of water vapor transport indicate that the zonal mean meridional circulation is incapable of transporting from north polar regions to low latitudes the quantity of water vapor observed. This result has been interpreted as implying the presence of nonpolar sources of water. Another possibility is the ability of atmospheric wave motions, which are not accounted for in a zonally symmetric framework, to efficiently accomplish the transport from a north polar source to the entirety of the Northern Hemisphere. The ability or inability of the full range of atmospheric motions to accomplish this transport has important implications regarding the questions of water sources and sinks on Mars: if the full spectrum of atmospheric motions proves to be incapable of accomplishing the transport, it strengthens arguments in favor of additional water sources. Preliminary results from a three dimensional atmospheric dynamical/water vapor transport numerical model are presented. The model accounts for the physics of a subliming water-ice cap, but does not yet incorporate recondensation of this sublimed water. Transport of vapor away from this water-ice cap in this three dimensional framework is compared with previously obtained zonally symmetric (two dimensional) results to quantify effects of water vapor transport by atmospheric eddies.

CMAS Interactions with Advanced Environmental Barrier Coatings Deposited via Plasma Spray- Physical Vapor Deposition

Science.gov (United States)

Harder, B. J.; Wiesner, V. L.; Zhu, D.; Johnson, N. S.

2017-01-01

Materials for advanced turbine engines are expected to have temperature capabilities in the range of 1370-1500C. At these temperatures the ingestion of sand and dust particulate can result in the formation of corrosive glass deposits referred to as CMAS. The presence of this glass can both thermomechanically and thermochemically significantly degrade protective coatings on metallic and ceramic components. Plasma Spray- Physical Vapor Deposition (PS-PVD) was used to deposit advanced environmental barrier coating (EBC) systems for investigation on their interaction with CMAS compositions. Coatings were exposed to CMAS and furnace tested in air from 1 to 50 hours at temperatures ranging from 1200-1500C. Coating composition and crystal structure were tracked with X-ray diffraction and microstructure with electron microscopy.

Chemical vapor deposition (CVD) of uranium for alpha spectrometry; Deposicion quimica de vapor (CVD) de uranio para espectrometria alfa

Energy Technology Data Exchange (ETDEWEB)

Ramirez V, M. L.; Rios M, C.; Ramirez O, J.; Davila R, J. I.; Mireles G, F., E-mail: luisalawliet@gmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

2015-09-15

The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

Water vapor estimation using digital terrestrial broadcasting waves

Science.gov (United States)

Kawamura, S.; Ohta, H.; Hanado, H.; Yamamoto, M. K.; Shiga, N.; Kido, K.; Yasuda, S.; Goto, T.; Ichikawa, R.; Amagai, J.; Imamura, K.; Fujieda, M.; Iwai, H.; Sugitani, S.; Iguchi, T.

2017-03-01

A method of estimating water vapor (propagation delay due to water vapor) using digital terrestrial broadcasting waves is proposed. Our target is to improve the accuracy of numerical weather forecast for severe weather phenomena such as localized heavy rainstorms in urban areas through data assimilation. In this method, we estimate water vapor near a ground surface from the propagation delay of digital terrestrial broadcasting waves. A real-time delay measurement system with a software-defined radio technique is developed and tested. The data obtained using digital terrestrial broadcasting waves show good agreement with those obtained by ground-based meteorological observation. The main features of this observation are, no need for transmitters (receiving only), applicable wherever digital terrestrial broadcasting is available and its high time resolution. This study shows a possibility to estimate water vapor using digital terrestrial broadcasting waves. In the future, we will investigate the impact of these data toward numerical weather forecast through data assimilation. Developing a system that monitors water vapor near the ground surface with time and space resolutions of 30 s and several kilometers would improve the accuracy of the numerical weather forecast of localized severe weather phenomena.

Recent Advances in Atmospheric Vapor-Phase Deposition of Transparent and Conductive Zinc Oxide

NARCIS (Netherlands)

Illiberi, A.; Poodt, P.; Roozeboom, F.

2014-01-01

The industrial need for high-throughput and low-cost ZnO deposition processes has triggered the development of atmospheric vapor-phase deposition techniques which can be easily applied to continuous, in-line manufacturing. While atmospheric CVD is a mature technology, new processes for the growth of

Gaseous material capacity of open plasma jet in plasma spray-physical vapor deposition process

Science.gov (United States)

Liu, Mei-Jun; Zhang, Meng; Zhang, Qiang; Yang, Guan-Jun; Li, Cheng-Xin; Li, Chang-Jiu

2018-01-01

Plasma spray-physical vapor deposition (PS-PVD) process, emerging as a highly efficient hybrid approach, is based on two powerful technologies of both plasma spray and physical vapor deposition. The maximum production rate is affected by the material feed rate apparently, but it is determined by the material vapor capacity of transporting plasma actually and essentially. In order to realize high production rate, the gaseous material capacity of plasma jet must be fundamentally understood. In this study, the thermal characteristics of plasma were measured by optical emission spectrometry. The results show that the open plasma jet is in the local thermal equilibrium due to a typical electron number density from 2.1 × 1015 to 3.1 × 1015 cm-3. In this condition, the temperature of gaseous zirconia can be equal to the plasma temperature. A model was developed to obtain the vapor pressure of gaseous ZrO2 molecules as a two dimensional map of jet axis and radial position corresponding to different average plasma temperatures. The overall gaseous material capacity of open plasma jet, take zirconia for example, was further established. This approach on evaluating material capacity in plasma jet would shed light on the process optimization towards both depositing columnar coating and a high production rate of PS-PVD.

Phase diagram of interfacial growth modes by vapor deposition and its application for ZnO nanostructures

Science.gov (United States)

Shu, Da-Jun; Xiong, Xiang; Liu, Ming; Wang, Mu

2017-09-01

Interfacial growth from vapor has been extensively studied. However, a straightforward picture of the growth mode under different growth conditions is still lacking. In this paper, we develop a comprehensive interfacial growth theory based on the stochastic approach. Using a critical interisland separation, we construct a general phase diagram of the growth modes. It has been revealed that if the Ehrlich-Schwoebel barrier EES is smaller than a critical value, the interfacial growth proceeds in a layer-by-layer (LBL) mode at any deposition rate. However, if EES is larger than the critical value, LBL growth occurs only at very small or very large deposition rates relative to the intralayer hopping rate, and multilayer (ML) growth occurs at a moderate deposition rate. Experiments with zinc oxide growth by chemical vapor deposition have been designed to qualitatively demonstrate the theoretical model. By changing the flux of the carrier gas (nitrogen gas) in chemical vapor deposition, we realize LBL, ML, and then reentrance of LBL homoepitaxial growth of ZnO successively. Moreover, we find that surface kinetics of ZnO is suppressed by decreasing oxygen partial pressure by comparing the experimental observations and theoretical models, which is supported by our recent first-principles calculations. Since the influence of the substrate and the growth species on growth can approximately be represented by binding energy and surface kinetics, we suggest that the phase diagram is essential for interfacial growth of different materials by vapor deposition.

Correction Technique for Raman Water Vapor Lidar Signal-Dependent Bias and Suitability for Water Wapor Trend Monitoring in the Upper Troposphere

Science.gov (United States)

Whiteman, D. N.; Cadirola, M.; Venable, D.; Calhoun, M.; Miloshevich, L; Vermeesch, K.; Twigg, L.; Dirisu, A.; Hurst, D.; Hall, E.;

Measurement of atmospheric precipitable water using a solar radiometer. [water vapor absorption effects

Science.gov (United States)

Pitts, D. E.; Dillinger, A. E.; Mcallum, W. E.

1974-01-01

A technique is described and tested that allows the determination of atmospheric precipitable water from two measurements of solar intensity: one in a water-vapor absorption band and another in a nearby spectral region unaffected by water vapor.

Correlations between water-soluble organic aerosol and water vapor: a synergistic effect from biogenic emissions?

Science.gov (United States)

Hennigan, Christopher J; Bergin, Michael H; Weber, Rodney J

2008-12-15

Ground-based measurements of meteorological parameters and water-soluble organic carbon in the gas(WSOCg) and particle (WSOCp) phases were carried out in Atlanta, Georgia, from May to September 2007. Fourteen separate events were observed throughout the summer in which WSOCp and water vapor concentrations were highly correlated (average WSOCp-water vapor r = 0.92); however, for the entire summer, no well-defined relationship existed between the two. The correlation events, which lasted on average 19 h, were characterized by a wide range of WSOCp and water vapor concentrations. Several hypotheses for the correlation are explored, including heterogeneous liquid phase SOA formation and the co-emission of biogenic VOCs and water vapor. The data provide supporting evidence for contributions from both and suggest the possibility of a synergistic effect between the co-emission of water vapor and VOCs from biogenic sources on SOA formation. Median WSOCp concentrations were also correlated with elemental carbon (EC), although this correlation extended over the entire summer. Despite the emission of water vapor from anthropogenic mobile sources and the WSOCp-EC correlation, mobile sources were not considered a potential cause for the WSOCp-water vapor correlations because of their low contribution to the water vapor budget. Meteorology could perhaps have influenced the WSOCp-EC correlation, but other factors are implicated as well. Overall, the results suggest that the temperature-dependent co-emission of water vapor through evapotranspiration and SOA precursor-VOCs by vegetation may be an important process contributing to SOA in some environments.

Vapor-Phase Deposition and Modification of Metal-Organic Frameworks: State-of-the-Art and Future Directions.

Science.gov (United States)

Stassen, Ivo; De Vos, Dirk; Ameloot, Rob

2016-10-04

Materials processing, and thin-film deposition in particular, is decisive in the implementation of functional materials in industry and real-world applications. Vapor processing of materials plays a central role in manufacturing, especially in electronics. Metal-organic frameworks (MOFs) are a class of nanoporous crystalline materials on the brink of breakthrough in many application areas. Vapor deposition of MOF thin films will facilitate their implementation in micro- and nanofabrication research and industries. In addition, vapor-solid modification can be used for postsynthetic tailoring of MOF properties. In this context, we review the recent progress in vapor processing of MOFs, summarize the underpinning chemistry and principles, and highlight promising directions for future research. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane

International Nuclear Information System (INIS)

Yamaoka, K.; Yoshizako, Y.; Kato, H.; Tsukiyama, D.; Terai, Y.; Fujiwara, Y.

2006-01-01

Carbon-doped silicon oxide (SiOCH) thin films were deposited by room-temperature plasma-enhanced chemical vapor deposition (PECVD) using tetraethoxysilane (TEOS). The deposition rate and composition of the films strongly depended on radio frequency (RF) power. The films deposited at low RF power contained more CH n groups. The SiOCH films showed high etch rate and low refractive index in proportion to the carbon composition. The deposition with low plasma density and low substrate temperature is effective for SiOCH growth by PECVD using TEOS

Chemical vapor deposition based tungsten disulfide (WS2) thin film transistor

KAUST Repository

Hussain, Aftab M.; Sevilla, Galo T.; Rader, Kelly; Hussain, Muhammad Mustafa

2013-01-01

electric field. This makes them an interesting option for channel material in field effect transistors (FETs). Therefore, we show a highly manufacturable chemical vapor deposition (CVD) based simple process to grow WS2 directly on silicon oxide in a furnace

A FGGE water vapor wind data set

Science.gov (United States)

Stewart, Tod R.; Hayden, Christopher M.

1985-01-01

It has been recognized for some time that water vapor structure visible in infrared imagery offers a potential for obtaining motion vectors when several images are considered in sequence (Fischer et al., 1981). A study evaluating water vapor winds obtained from the VISSR atmospheric sounder (Stewart et al., 1985) has confirmed the viability of the approach. More recently, 20 data sets have been produced from METEOSAT water vapor imagery for the FGGE period of 10-25 November 1979. Where possible, two data sets were prepared for each day at 0000 and 1200 GMT and compared with rawinsondes over Europe, Africa, and aircraft observations over the oceans. Procedures for obtaining winds were, in general, similar to the earlier study. Motions were detected both by a single pixel tracking and a cross correlation method by using three images individually separated by one hour. A height assignment was determined by matching the measured brightness temperature to the temperature structure represented by the FGGE-IIIB analyses. Results show that the METEOSAT water vapor winds provide uniform horizontal coverage of mid-level flow over the globe with good accuracy.

Uranium/water vapor reactions in gaseous atmospheres

International Nuclear Information System (INIS)

Jackson, R.L.; Condon, J.B.; Steckel, L.M.

1977-07-01

Experiments have been performed to determine the effect of varying humidities, gaseous atmospheres, and temperatures on the uranium/water vapor reaction. A balance, which allowed continuous in-system weighings, was used to determine the rates of the uranium/water vapor reactions at water vapor pressures of 383, 1586, and 2853 Pa and at temperatures of 80, 100, and 150 0 C in atmospheres of hydrogen, argon, or argon/oxygen mixtures. Based on rate data, the reactions were characterized as hydriding or nonhydriding. Hydriding reactions were found to be preferred in moist hydrogen systems at the higher temperatures and the lower humidities. The presence of hydrogen in hydriding systems was found to initially inhibit the reaction, but causes an acceleration of the rate in the final stages. In general, reaction rates of hydriding systems approached the hydriding rates calculated and observed in dry hydrogen. Hydriding and nonhydriding reaction rates showed a positive correlation to temperature and water vapor pressure. Final reaction rates in moist argon/oxygen mixtures of 1.93, 4.57, and 9.08 mole percent oxygen were greater than the rates observed in moist hydrogen or argon. Final reaction rates were negatively correlated to the oxygen concentration

Detection of water vapor on Jupiter

Science.gov (United States)

Larson, H. P.; Fink, U.; Treffers, R.; Gautier, T. N., III

1975-01-01

High-altitude (12.4 km) spectroscopic observations of Jupiter at 5 microns from the NASA 91.5 cm airborne infrared telescope have revealed 14 absorptions assigned to the rotation-vibration spectrum of water vapor. Preliminary analysis indicates a mixing ratio about 1 millionth for the vapor phase of water. Estimates of temperature (greater than about 300 K) and pressure (less than 20 atm) suggest observation of water deep in Jupiter's hot spots responsible for its 5 micron flux. Model-atmosphere calculations based on radiative-transfer theory may change these initial estimates and provide a better physical picture of Jupiter's atmosphere below the visible cloud tops.

Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

Science.gov (United States)

Collis, Ward J.; Abul-Fadl, Ali

1988-01-01

The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

Thermodynamic calculations for chemical vapor deposition of silicon carbide

International Nuclear Information System (INIS)

Minato, Kazuo; Fukuda, Kousaku; Ikawa, Katsuichi

1985-03-01

The composition of vapor and condensed phases at equilibrium and CVD phase diagrams were calculated for the CH 3 SiCl 3 -H 2 -Ar system using a computer code SOLGASMIX-PV, which is based on the free energy minimization method. These calculations showed that β-SiC, β-SiC+C(s), β-SiC+Si(s), β-SiC+Si(l), Si(s), Si(l), or C(s) would be deposited depending on deposition parameters. In the CH 3 SiCl 3 -Ar system, condensed phase was found to be β-SiC+C(s) or C(s). Comparing the calculated CVD phase diagrams with the experimental results from the literature, β-SiC+C(s) and β-SiC+Si(s) were deposited in the experiments at the high temperature (more than 2000K) and low temperature (less than 1700K) parts of a resion, respectively, where only β-SiC would be deposited in the calculations. These are remakable results to consider the deposition mechanism of silicon carbide. (author)

Plasma-enhanced chemical vapor deposition of graphene on copper substrates

Directory of Open Access Journals (Sweden)

Nicolas Woehrl

2014-04-01

Full Text Available A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO2 substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm2. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

Monolithic microwave integrated circuit water vapor radiometer

Science.gov (United States)

Sukamto, L. M.; Cooley, T. W.; Janssen, M. A.; Parks, G. S.

1991-01-01

A proof of concept Monolithic Microwave Integrated Circuit (MMIC) Water Vapor Radiometer (WVR) is under development at the Jet Propulsion Laboratory (JPL). WVR's are used to remotely sense water vapor and cloud liquid water in the atmosphere and are valuable for meteorological applications as well as for determination of signal path delays due to water vapor in the atmosphere. The high cost and large size of existing WVR instruments motivate the development of miniature MMIC WVR's, which have great potential for low cost mass production. The miniaturization of WVR components allows large scale deployment of WVR's for Earth environment and meteorological applications. Small WVR's can also result in improved thermal stability, resulting in improved calibration stability. Described here is the design and fabrication of a 31.4 GHz MMIC radiometer as one channel of a thermally stable WVR as a means of assessing MMIC technology feasibility.

Water vapor and Gas Transport through Polymeric Membranes

NARCIS (Netherlands)

Metz, S.J.

2003-01-01

Water vapor transport through polymeric materials plays an important role in a large number of applications such as: food packaging, breathable clothing, roofing membranes, diapers, and the removal of water vapor from gas streams (e.g. dehydration of natural gas or the drying of compressed air).

Rapid Thermal Chemical Vapor Deposition for Dual-Gated Sub-100 nm MOSFET's

National Research Council Canada - National Science Library

Sturm, James

2001-01-01

... (such as microprocessors and memory chips) is based. This project examines the scaling of MOSFET's to very small channel dimensions using a vertical structure which is defined by Rapid Thermal Chemical Vapor Deposition...

Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

International Nuclear Information System (INIS)

Kagan, Harris; Gan, K.K.; Kass, Richard

2009-01-01

Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2009, and the LHC upgrades expected in 2013, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

NARCIS (Netherlands)

Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

1999-01-01

Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer

Comparisons between a gas-phase model of silane chemical vapor deposition and laser-diagnostic measurements

International Nuclear Information System (INIS)

Breiland, W.G.; Coltrin, M.E.; Ho, P.

1986-01-01

Theoretical modeling and experimental measurements have been used to study gas-phase chemistry in the chemical vapor deposition (CVD) of silicon from silane. Pulsed laser Raman spectroscopy was used to obtain temperature profiles and to obtain absolute density profiles of silane during deposition at atmospheric and 6-Torr total pressures for temperatures ranging from 500 to 800 0 C. Laser-excited fluorescence was used to obtain relative density profiles of Si 2 during deposition at 740 0 C in helium with 0-12 Torr added hydrogen. These measurements are compared to predictions from the theoretical model of Coltrin, Kee, and Miller. The predictions agree qualitatively with experiment. These studies indicate that fluid mechanics and gas-phase chemical kinetics are important considerations in understanding the chemical vapor deposition process

Water-vapor pressure control in a volume

Science.gov (United States)

Scialdone, J. J.

1978-01-01

The variation with time of the partial pressure of water in a volume that has openings to the outside environment and includes vapor sources was evaluated as a function of the purging flow and its vapor content. Experimental tests to estimate the diffusion of ambient humidity through openings and to validate calculated results were included. The purging flows required to produce and maintain a certain humidity in shipping containers, storage rooms, and clean rooms can be estimated with the relationship developed here. These purging flows are necessary to prevent the contamination, degradation, and other effects of water vapor on the systems inside these volumes.

Synthesis of mullite coatings by chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Mulpuri, R.P.; Auger, M.; Sarin, V.K. [Boston Univ., MA (United States)

1996-08-01

Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Mullite is a solid solution of Al{sub 2}O{sub 3} and SiO{sub 2} with a composition of 3Al{sub 2}O{sub 3}{circ}2SiO{sub 2}. Thermodynamic calculations performed on the AlCl{sub 3}-SiCl{sub 4}-CO{sub 2}-H{sub 2} system were used to construct equilibrium CVD phase diagrams. With the aid of these diagrams and consideration of kinetic rate limiting factors, initial process parameters were determined. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed.

Incorporation of Titanium into H-ZSM-5 Zeolite via Chemical Vapor Deposition: Effect of Steam Treatment

International Nuclear Information System (INIS)

Xu, Cheng Hua; Jin, Tai Huan; Jhung, Sung Hwa; Hwang, Jin Soo; Chang, Jong San; Qiu, Fa Li; Park, Sang Eon

2004-01-01

Ti-ZSM-5 prepared by secondary synthesis, from the reaction of H-ZSM-5 with vapor phase TiCl 4 , was characterized with several physicochemical techniques including FT-IR and UV/VIS-DRS. It was found that zeolite structure, surface area and pore volume did not change, and the framework aluminum could not be replaced by titanium atom during the secondary synthesis of Ti-ZSM-5. The incorporation of titanium into the framework might be due to reaction of TiCl 4 with the silanol groups associated with defects or surface sites. The formation of extra-framework titanium could not be avoided, unless the samples were further treated by water vapor at 550 .deg. C or higher temperature. High temperature steam treatment of Ti-ZSM-5 prepared by chemical vapor deposition with TiCl 4 was efficient to prevent the formation of non-framework titanium species. Ti-ZSM-5 zeolites prepared in this work contained only framework titanium species and exhibited improved catalytic property close to TS-1 prepared by hydrothermal synthesis

Incorporation of Titanium into H-ZSM-5 Zeolite via Chemical Vapor Deposition: Effect of Steam Treatment

Energy Technology Data Exchange (ETDEWEB)

Xu, Cheng Hua; Jin, Tai Huan; Jhung, Sung Hwa; Hwang, Jin Soo [Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); Chang, Jong San; Qiu, Fa Li [Chinese Academy of Sciences(CAS), Chengdu (China); Park, Sang Eon [Inha University, Incheon (Korea, Republic of)

2004-05-15

Ti-ZSM-5 prepared by secondary synthesis, from the reaction of H-ZSM-5 with vapor phase TiCl{sub 4}, was characterized with several physicochemical techniques including FT-IR and UV/VIS-DRS. It was found that zeolite structure, surface area and pore volume did not change, and the framework aluminum could not be replaced by titanium atom during the secondary synthesis of Ti-ZSM-5. The incorporation of titanium into the framework might be due to reaction of TiCl{sub 4} with the silanol groups associated with defects or surface sites. The formation of extra-framework titanium could not be avoided, unless the samples were further treated by water vapor at 550 .deg. C or higher temperature. High temperature steam treatment of Ti-ZSM-5 prepared by chemical vapor deposition with TiCl{sub 4} was efficient to prevent the formation of non-framework titanium species. Ti-ZSM-5 zeolites prepared in this work contained only framework titanium species and exhibited improved catalytic property close to TS-1 prepared by hydrothermal synthesis.

The chemical vapor deposition of zirconium carbide onto ceramic substrates

International Nuclear Information System (INIS)

Glass A, John Jr.; Palmisiano, Nick Jr.; Welsh R, Edward

1999-01-01

Zirconium carbide is an attractive ceramic material due to its unique properties such as high melting point, good thermal conductivity, and chemical resistance. The controlled preparation of zirconium carbide films of superstoichiometric, stoichiometric, and substoichiometric compositions has been achieved utilizing zirconium tetrachloride and methane precursor gases in an atmospheric pressure high temperature chemical vapor deposition system

Obtention of selective membranes for water and hydrophobic liquids by plasma enhanced chemical vapor deposition on porous substrates

International Nuclear Information System (INIS)

Bankovic, P.; Demarquette, N.R.; Silva, M.L.P. da

2004-01-01

In this work, the possibility of obtaining selective membranes for water and hydrophobic liquids by plasma enhanced chemical vapor deposition (PECVD) of hexamethyldisilazane (HMDS) or double layers of HMDS and n-hexane on porous substrates using a capacitive plasma reactor was investigated. The porous substrates used were paper filter, diatomite and polyester textiles. The films were characterized by X-ray photoelectron spectroscopy (XPS), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and contact angle measurements. The membranes obtained were characterized by the Cobb test. Their efficiency to separate hydrocarbon compounds from water was evaluated through filtration experiments and Karl-Fischer titration tests. The reagents used in the filtration experiments were: chloroform, n-hexane, n-heptane, ethyl ether, benzene and diesel. XPS analysis showed that Si, N, C and O were present at the surface of the film. C peak was dominant in the double layer film spectra. C-H n , CH 2 , Si-H, Si-CH 3 , N-H, Si-CH 2 -Si, Si-N-Si and Si-C bonds were identified in both types of the films by ATR-FTIR. The relative intensities of the corresponding peaks in the two spectra were different. The XPS and FTIR results indicated that C was most likely present in a CH n form at the surface of double layer film. The average contact angles formed by drops of water on the film surface ranged from 135 deg. to 155 deg. . Water adsorption measured by Cobb test decreased from average values ranging from 300 to 9000 g m -2 (for nonmodified surfaces) to values ranging from 0 to 20 g m -2 (for treated surfaces). The Karl-Fischer titration indicated that between 90 and 1000 ppm (depending on the reagent used) of water remained in the hydrocarbon compound after filtration

Water vapor permeabilities through polymers: diffusivities from experiments and simulations

International Nuclear Information System (INIS)

Seethamraju, Sindhu; Ramamurthy, Praveen Chandrashekarapura; Madras, Giridhar

2014-01-01

This study experimentally determines water vapor permeabilities, which are subsequently correlated with the diffusivities obtained from simulations. Molecular dynamics (MD) simulations were used for determining the diffusion of water vapor in various polymeric systems such as polyethylene, polypropylene, poly (vinyl alcohol), poly (vinyl acetate), poly (vinyl butyral), poly (vinylidene chloride), poly (vinyl chloride) and poly (methyl methacrylate). Cavity ring down spectroscopy (CRDS) based methodology has been used to determine the water vapor transmission rates. These values were then used to calculate the diffusion coefficients for water vapor through these polymers. A comparative analysis is provided for diffusivities calculated from CRDS and MD based results by correlating the free volumes. (paper)

A predictive model for the chemical vapor deposition of polysilicon in a cold wall, rapid thermal system

Energy Technology Data Exchange (ETDEWEB)

Toprac, A.J.; Trachtenberg, I.; Edgar, T.F. (Univ. of Texas, Austin, TX (United States). Dept. of Chemical Engineering)

1994-06-01

The chemical vapor deposition of polysilicon from thermally activated silane in a cold wall, single-wafer rapid thermal system was studied by experimentation at a variety of low pressure conditions, including very high temperatures. The effect of diluent gas on polysilicon deposition rates was examined using hydrogen, helium, and krypton. A mass-transfer model for the chemical vapor deposition of polysilicon in a cold wall, rapid thermal system was developed. This model was used to produce an empirical rate expression for silicon deposition from silane by regressing kinetic parameters to fit experimental data. The resulting model provided accurate predictions over widely varying conditions in the experimental data.

The vertical distribution of Mars water vapor

Science.gov (United States)

Davies, D. W.

1979-01-01

Analysis of observations made from the Viking 1 Orbiter indicates that the water vapor over the Viking 1 landing site is uniformly mixed with the atmosphere and not concentrated near the surface. The analysis incorporates the effects of atmospheric scattering and explains why previous earth-based observations showed a strong diurnal variation in water content. It also explains the lack of an early morning fog and removes the necessity of daily exchange of large amounts of water between the surface and the atmosphere. A water vapor volume mixing ratio of 1.5 x 10 to the -4th is inferred for the Viking 1 site in late summer.

Photocatalytic activity of tin-doped TiO{sub 2} film deposited via aerosol assisted chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Chua, Chin Sheng, E-mail: cschua@simtech.a-star.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Tan, Ooi Kiang; Tse, Man Siu [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Ding, Xingzhao [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore)

2013-10-01

Tin-doped TiO{sub 2} films are deposited via aerosol assisted chemical vapor deposition using a precursor mixture composing of titanium tetraisopropoxide and tetrabutyl tin. The amount of tin doping in the deposited films is controlled by the volume % concentration ratio of tetrabutyl tin over titanium tetraisopropoxide in the mixed precursor solution. X-ray diffraction analysis results reveal that the as-deposited films are composed of pure anatase TiO{sub 2} phase. Red-shift in the absorbance spectra is observed attributed to the introduction of Sn{sup 4+} band states below the conduction band of TiO{sub 2}. The effect of tin doping on the photocatalytic property of TiO{sub 2} films is studied through the degradation of stearic acid under UV light illumination. It is found that there is a 10% enhancement on the degradation rate of stearic acid for the film with 3.8% tin doping in comparison with pure TiO{sub 2} film. This improvement of photocatalytic performance with tin incorporation could be ascribed to the reduction of electron-hole recombination rate through charge separation and an increased amount of OH radicals which are crucial for the degradation of stearic acid. Further increase in tin doping results in the formation of recombination site and large anatase grains, which leads to a decrease in the degradation rate. - Highlights: ► Deposition of tin-doped TiO{sub 2} film via aerosol assisted chemical vapor deposition ► Deposited anatase films show red-shifted in UV–vis spectrum with tin-dopants. ► Photoactivity improves at low tin concentration but reduces at higher concentration. ► Improvement in photoactivity due to bandgap narrowing from Sn{sup 4+} band states ► Maximum photoactivity achieved occurs for films with 3.8% tin doping.

Scaling behavior of columnar structure during physical vapor deposition

Science.gov (United States)

Meese, W. J.; Lu, T.-M.

2018-02-01

The statistical effects of different conditions in physical vapor deposition, such as sputter deposition, have on thin film morphology has long been the subject of interest. One notable effect is that of column development due to differential chamber pressure in the well-known empirical model called the Thornton's Structure Zone Model. The model is qualitative in nature and theoretical understanding with quantitative predictions of the morphology is still lacking due, in part, to the absence of a quantitative description of the incident flux distribution on the growth front. In this work, we propose an incident Gaussian flux model developed from a series of binary hard-sphere collisions and simulate its effects using Monte Carlo methods and a solid-on-solid growth scheme. We also propose an approximate cosine-power distribution for faster Monte Carlo sampling. With this model, it is observed that higher chamber pressures widen the average deposition angle, and similarly increase the growth of column diameters (or lateral correlation length) and the column-to-column separation (film surface wavelength). We treat both the column diameter and the surface wavelength as power laws. It is seen that both the column diameter exponent and the wavelength exponent are very sensitive to changes in pressure for low pressures (0.13 Pa to 0.80 Pa); meanwhile, both exponents saturate for higher pressures (0.80 Pa to 6.7 Pa) around a value of 0.6. These predictions will serve as guides to future experiments for quantitative description of the film morphology under a wide range of vapor pressure.

Microstructural Effects and Properties of Non-line-of-Sight Coating Processing via Plasma Spray-Physical Vapor Deposition

Science.gov (United States)

Harder, Bryan J.; Zhu, Dongming; Schmitt, Michael P.; Wolfe, Douglas E.

2017-08-01

Plasma spray-physical vapor deposition (PS-PVD) is a unique processing method that bridges the gap between conventional thermal spray and vapor phase methods, and enables highly tailorable coatings composed of a variety of materials in thin, dense layers or columnar microstructures with modification of the processing conditions. The strengths of this processing technique are material and microstructural flexibility, deposition speed, and potential for non-line-of-sight (NLOS) capability by vaporization of the feedstock material. The NLOS capability of PS-PVD is investigated here using yttria-stabilized zirconia and gadolinium zirconate, which are materials of interest for turbine engine applications. PS-PVD coatings were applied to static cylindrical substrates approximately 6-19 mm in diameter to study the coating morphology as a function of angle. In addition, coatings were deposited on flat substrates under various impingement configurations. Impingement angle had significant effects on the deposition mode, and microscopy of coatings indicated that there was a shift in the deposition mode at approximately 90° from incidence on the cylindrical samples, which may indicate the onset of more turbulent flow and PVD-like growth. Coatings deposited at non-perpendicular angles exhibited a higher density and nearly a 2× improvement in erosion performance when compared to coatings deposited with the torch normal to the surface.

TEXTILE SURFACE MODIFICATION BY PYHSICAL VAPOR DEPOSITION – (REVIEW

Directory of Open Access Journals (Sweden)

YUCE Ismail

2017-05-01

Full Text Available Textile products are used in various branches of the industry from automotive to space products. Textiles produced for industrial use are generally referred to as technical textiles. Technical textiles are nowadays applied to several areas including transportation, medicine, agriculture, protection, sports, packaging, civil engineering and industry. There are rapid developments in the types of materials used in technical textiles. Therefore, modification and functionalization of textile surfaces is becoming more crucial. The improvements of the properties such as anti-bacterial properties, fire resistivity, UV radiation resistance, electrical conductivity, self cleaning, and super hydrophobic, is getting more concern with respect to developments in textile engineering. The properties of textile surfaces are closely related to the fiber structure, the differences in the polymer composition, the fiber mixture ratio, and the physical and chemical processes applied. Textile surface modifications can be examined in four groups under the name mechanical, chemical, burning and plasma. Surface modifications are made to improve the functionality of textile products. Textile surface modifications affect the properties of the products such as softness, adhesion and wettability. The purpose of this work is to reveal varieties of vapor deposition modifications to improve functionality. For this purpose, the pyhsical vapor deposition methods, their affects on textile products and their end-uses will be reviewed.

Ultrahigh Responsivity and Detectivity Graphene-Perovskite Hybrid Phototransistors by Sequential Vapor Deposition

Science.gov (United States)

Chang, Po-Han; Liu, Shang-Yi; Lan, Yu-Bing; Tsai, Yi-Chen; You, Xue-Qian; Li, Chia-Shuo; Huang, Kuo-You; Chou, Ang-Sheng; Cheng, Tsung-Chin; Wang, Juen-Kai; Wu, Chih-I.

2017-04-01

In this work, graphene-methylammonium lead iodide (MAPbI3) perovskite hybrid phototransistors fabricated by sequential vapor deposition are demonstrated. Ultrahigh responsivity of 1.73 × 107 A W-1 and detectivity of 2 × 1015 Jones are achieved, with extremely high effective quantum efficiencies of about 108% in the visible range (450-700 nm). This excellent performance is attributed to the ultra-flat perovskite films grown by vapor deposition on the graphene sheets. The hybrid structure of graphene covered with uniform perovskite has high exciton separation ability under light exposure, and thus efficiently generates photocurrents. This paper presents photoluminescence (PL) images along with statistical analysis used to study the photo-induced exciton behavior. Both uniform and dramatic PL intensity quenching has been observed over entire measured regions, consistently demonstrating excellent exciton separation in the devices.

Industrialization of hot wire chemical vapor deposition for thin film applications

NARCIS (Netherlands)

Schropp, Ruud

2015-01-01

The consequences of implementing a Hot Wire Chemical Vapor Deposition (HWCVD) chamber into an existing in-line or roll-to-roll reactor are described. The hardware and operation of the HWCVD production reactor is compared to that of existing roll-to-roll reactors based on Plasma Enhanced Chemical

Evidence of thermal transport anisotropy in stable glasses of vapor deposited organic molecules

Science.gov (United States)

Ràfols-Ribé, Joan; Dettori, Riccardo; Ferrando-Villalba, Pablo; Gonzalez-Silveira, Marta; Abad, Llibertat; Lopeandía, Aitor F.; Colombo, Luciano; Rodríguez-Viejo, Javier

2018-03-01

Vapor deposited organic glasses are currently in use in many optoelectronic devices. Their operation temperature is limited by the glass transition temperature of the organic layers and thermal management strategies become increasingly important to improve the lifetime of the device. Here we report the unusual finding that molecular orientation heavily influences heat flow propagation in glassy films of small molecule organic semiconductors. The thermal conductivity of vapor deposited thin-film semiconductor glasses is anisotropic and controlled by the deposition temperature. We compare our data with extensive molecular dynamics simulations to disentangle the role of density and molecular orientation on heat propagation. Simulations do support the view that thermal transport along the backbone of the organic molecule is strongly preferred with respect to the perpendicular direction. This is due to the anisotropy of the molecular interaction strength that limits the transport of atomic vibrations. This approach could be used in future developments to implement small molecule glassy films in thermoelectric or other organic electronic devices.

Precipitable water and vapor flux between Belem and Manaus

International Nuclear Information System (INIS)

Marques, J.

1977-01-01

The water vapor flux and precipitable water was computated over the natural Amazon forest in the stretch between Belem and Manaus for 1972. The atmospheric branch of hidrological cycle theory was applied and the most significant conclusions on an annual basis are: Atlantic Ocean water vapor contributes 52% to the regional precipitation and is significant the role played by local evapotranspiration in the precipitation in the area; there were signs of the phenomenon of water vapor recycling nearly throughout the year. Evapotranspiration contributes to 48% of the precipitations in the area studied. The real evapotranspiration estimated by this method was 1,000mm year - 1 [pt

Growth of aligned ZnO nanowires via modified atmospheric pressure chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Zhao, Yuping; Li, Chengchen [Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu, 212013 (China); Chen, Mingming, E-mail: andychain@live.cn [Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu, 212013 (China); Yu, Xiao; Chang, Yunwei [Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu, 212013 (China); Chen, Anqi [State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics & Information Technology, Sun Yat-Sen University, Guangzhou Higher Education Mega Center (University Town), Guangzhou, 510006 (China); Zhu, Hai, E-mail: zhuhai5@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics & Information Technology, Sun Yat-Sen University, Guangzhou Higher Education Mega Center (University Town), Guangzhou, 510006 (China); Tang, Zikang, E-mail: zktang@umac.mo [State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics & Information Technology, Sun Yat-Sen University, Guangzhou Higher Education Mega Center (University Town), Guangzhou, 510006 (China); The Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau (China)

2016-12-09

In this work, we report the growth of high-quality aligned ZnO nanowires via a facile atmospheric pressure chemical vapor deposition (CVD) method. The CVD reactor chamber used was more complicated than a conventional one due to the quartz boats loaded with sources (ZnO/C) and substrates being inserted into a semi-open quartz tube, and then placed inside the CVD reactor. The semi-open quartz tube played a very important role in growing the ZnO nanowires, and demonstrated that the transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber. Aligned ZnO nanowires were successfully obtained, though they were only found at substrates located upstream. The very high crystalline quality of the obtained ZnO nanowires was demonstrated by high-resolution transmission electron microscopy and room temperature photoluminescence investigations. Such ZnO nanowires with high crystalline quality may provide opportunities for the fabrication of ZnO-based nano-devices in future. - Highlights: • High-quality aligned ZnO nanowires were obtained via modified chemical vapor deposition under atmospheric pressure. • The semi-open quartz tube plays very important roles in growing ZnO nanowires. • The transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber.

Growth of aligned ZnO nanowires via modified atmospheric pressure chemical vapor deposition

International Nuclear Information System (INIS)

Zhao, Yuping; Li, Chengchen; Chen, Mingming; Yu, Xiao; Chang, Yunwei; Chen, Anqi; Zhu, Hai; Tang, Zikang

2016-01-01

In this work, we report the growth of high-quality aligned ZnO nanowires via a facile atmospheric pressure chemical vapor deposition (CVD) method. The CVD reactor chamber used was more complicated than a conventional one due to the quartz boats loaded with sources (ZnO/C) and substrates being inserted into a semi-open quartz tube, and then placed inside the CVD reactor. The semi-open quartz tube played a very important role in growing the ZnO nanowires, and demonstrated that the transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber. Aligned ZnO nanowires were successfully obtained, though they were only found at substrates located upstream. The very high crystalline quality of the obtained ZnO nanowires was demonstrated by high-resolution transmission electron microscopy and room temperature photoluminescence investigations. Such ZnO nanowires with high crystalline quality may provide opportunities for the fabrication of ZnO-based nano-devices in future. - Highlights: • High-quality aligned ZnO nanowires were obtained via modified chemical vapor deposition under atmospheric pressure. • The semi-open quartz tube plays very important roles in growing ZnO nanowires. • The transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber.

SiC nanofibers grown by high power microwave plasma chemical vapor deposition

International Nuclear Information System (INIS)

Honda, Shin-ichi; Baek, Yang-Gyu; Ikuno, Takashi; Kohara, Hidekazu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

2003-01-01

Silicon carbide (SiC) nanofibers have been synthesized on Si substrates covered by Ni thin films using high power microwave chemical vapor deposition (CVD). Characterization using transmission electron microscopy (TEM) combined with electron energy-dispersive X-ray spectroscopy (EDX) revealed that the resultant fibrous nanostructures were assigned to β-SiC with high crystallinity. The formation of SiC nanofibers can be explained by the vapor liquid solid (VLS) mechanism in which precipitation of SiC occurs from the supersaturated Ni nanoparticle containing Si and C

Processing-structure-property relationships in electron beam physical vapor deposited yttria stabilized zirconia coatings

International Nuclear Information System (INIS)

Rao, D. Srinivasa; Valleti, Krishna; Joshi, S. V.; Janardhan, G. Ranga

2011-01-01

The physical and mechanical properties of yttria stabilized zirconia (YSZ) coatings deposited by the electron beam physical vapor deposition technique have been investigated by varying the key process variables such as vapor incidence angle and sample rotation speed. The tetragonal zirconia coatings formed under varying process conditions employed were found to have widely different surface and cross-sectional morphologies. The porosity, phase composition, planar orientation, hardness, adhesion, and surface residual stresses in the coated specimens were comprehensively evaluated to develop a correlation with the process variables. Under transverse scratch test conditions, the YSZ coatings exhibited two different crack formation modes, depending on the magnitude of residual stress. The influence of processing conditions on the coating deposition rate, column orientation angle, and adhesion strength has been established. Key relationships between porosity, hardness, and adhesion are also presented.

Transforming a Simple Commercial Glue into Highly Robust Superhydrophobic Surfaces via Aerosol-Assisted Chemical Vapor Deposition.

Science.gov (United States)

Zhuang, Aoyun; Liao, Ruijin; Lu, Yao; Dixon, Sebastian C; Jiamprasertboon, Arreerat; Chen, Faze; Sathasivam, Sanjayan; Parkin, Ivan P; Carmalt, Claire J

2017-12-06

Robust superhydrophobic surfaces were synthesized as composites of the widely commercially available adhesives epoxy resin (EP) and polydimethylsiloxane (PDMS). The EP layer provided a strongly adhered micro/nanoscale structure on the substrates, while the PDMS was used as a post-treatment to lower the surface energy. In this study, the depositions of EP films were taken at a range of temperatures, deposition times, and substrates via aerosol-assisted chemical vapor deposition (AACVD). A novel dynamic deposition temperature approach was developed to create multiple-layered periodic micro/nanostructures that significantly improved the surface mechanical durability. Water droplet contact angles (CA) of 160° were observed with droplet sliding angles (SA) frequently UV testing (365 nm, 3.7 mW/cm 2 , 120 h) were carried out to exhibit the environmental stability of the films. Self-cleaning behavior was demonstrated in clearing the surfaces of various contaminating powders and aqueous dyes. This facile and flexible method for fabricating highly durable superhydrophobic polymer films points to a promising future for AACVD in their scalable and low-cost production.

Synthesis of diamond films by pulsed liquid injection chemical vapor deposition using a mixture of acetone and water as precursor

International Nuclear Information System (INIS)

Apatiga, L.M.; Morales, J.

2009-01-01

A chemical vapor deposition reactor based on the flash evaporation of an organic liquid precursor was used to grow diamond films on Si substrates. An effective pulsed liquid injection mechanism consisting of an injector, normally used for fuel injection in internal combustion engines, injects micro-doses of the precursor to the evaporation zone at 280 o C and is instantly evaporated. The resulting vapor mixture is transported by a carrier gas to the high-temperature reaction chamber where the diamond nucleates and grows on the substrate surface at temperatures ranging from 750 to 850 o C. The injection frequency, opening time, number of pulses and other injector parameters are controlled by a computer-driven system. The diamond film morphology and structure were characterized by scanning electron microscopy and Raman spectroscopy. The as-deposited diamond films show a ball-shaped morphology with a grain size that varies from 100 to 400 nm, as well as the characteristic diamond Raman band at 1332 cm -1 . The effects of the experimental parameters and operation principle on the diamond films quality are analyzed and discussed in terms of crystallinity, composition, structure, and morphology.

Chemical vapor deposition polymerization the growth and properties of parylene thin films

CERN Document Server

Fortin, Jeffrey B

2004-01-01

Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

Importance Profiles for Water Vapor

Science.gov (United States)

Mapes, Brian; Chandra, Arunchandra S.; Kuang, Zhiming; Zuidema, Paquita

2017-11-01

Motivated by the scientific desire to align observations with quantities of physical interest, we survey how scalar importance functions depend on vertically resolved water vapor. Definitions of importance begin from familiar examples of water mass I m and TOA clear-sky outgoing longwave flux I OLR, in order to establish notation and illustrate graphically how the sensitivity profile or "kernel" depends on whether specific humidity S, relative humidity R, or ln( R) are used as measures of vapor. Then, new results on the sensitivity of convective activity I con to vapor (with implied knock-on effects such as weather prediction skill) are presented. In radiative-convective equilibrium, organized (line-like) convection is much more sensitive to moisture than scattered isotropic convection, but it exists in a drier mean state. The lesson for natural convection may be that organized convection is less susceptible to dryness and can survive and propagate into regions unfavorable for disorganized convection. This counterintuitive interpretive conclusion, with respect to the narrow numerical result behind it, highlights the importance of clarity about what is held constant at what values in sensitivity or susceptibility kernels. Finally, the sensitivities of observable radiance signals I sig for passive remote sensing are considered. While the accuracy of R in the lower free troposphere is crucial for the physical importance scalars, this layer is unfortunately the most difficult to isolate with passive remote sensing: In high emissivity channels, water vapor signals come from too high in the atmosphere (for satellites) or too low (for surface radiometers), while low emissivity channels have poor altitude discrimination and (in the case of satellites) are contaminated by surface emissions. For these reasons, active ranging (LiDAR) is the preferred observing strategy.

Atmospheric water vapor: Distribution and Empirical estimation in the atmosphere of Thailand

Science.gov (United States)

Phokate, S.

2017-09-01

Atmospheric water vapor is a crucial component of the Earth’s atmosphere, which is shown by precipitable water vapor. It is calculated from the upper air data. In Thailand, the data were collected from four measuring stations located in Chiang Mai, Ubon Ratchathani, Bangkok, and Songkhla during the years 1998-2013. The precipitable water vapor obtained from this investigation were used to define an empirical model associated with the vapor pressure, which is a surface data at the same stations. The result shows that the relationship has a relatively high level of reliability. The precipitable water vapor obtained from the upper air data is nearly equal to the value from the model. The model was used to calculate the precipitable water vapor from the surface data 85 stations across the country. The result shows that seasonal change of the precipitable water vapor was low in the dry season (November-April) and high in the rainy season (May-October). In addition, precipitable water vapor varies along the latitudes of the stations. The high value obtains for low latitudes, but it is low for high latitudes.

Sodium vapor deposition onto a horizontal flat plate above liquid sodium surface, 2

International Nuclear Information System (INIS)

Kudo, Kazuhiko; Hirata, Masaru.

1977-01-01

The sodium vapor deposition onto a horizontal flat plate above liquid sodium surface was studied. The analysis was performed by assuming that the sodium mist is emitted into the main flow without condensation and then grows up in the main flow and drops on the sodium surface. The effects of growth of sodium mist to the system were investigated. The model of the phenomena is the sodium deposition onto a horizontal flat plate which is placed above the sodium surface with the medium cover gas. One-dimensional analysis can be done. The rate of deposition is greatly reduced when the temperature of the flat plate is lowered. For the analysis of this phenomena, it is assumed that the sodium mist grows by condensation. One of results is that the real state may be the state between the state that the condensation of mist is made in the boundary layer and the state that the mist is condensed in the main flow. Others are that there is no effect of sodium mist condensation on the rate of deposition, and that the rate of the vaporization of sodium is given by the original and the modified model. (Kato, T.)

The annual cycle of stratospheric water vapor in a general circulation model

Science.gov (United States)

Mote, Philip W.

1995-01-01

The application of general circulation models (GCM's) to stratospheric chemistry and transport both permits and requires a thorough investigation of stratospheric water vapor. The National Center for Atmospheric Research has redesigned its GCM, the Community Climate Model (CCM2), to enable studies of the chemistry and transport of tracers including water vapor; the importance of water vapor to the climate and chemistry of the stratosphere requires that it be better understood in the atmosphere and well represented in the model. In this study, methane is carried as a tracer and converted to water; this simple chemistry provides an adequate representation of the upper stratospheric water vapor source. The cold temperature bias in the winter polar stratosphere, which the CCM2 shares with other GCM's, produces excessive dehydration in the southern hemisphere, but this dry bias can be ameliorated by setting a minimum vapor pressure. The CCM2's water vapor distribution and seasonality compare favorably with observations in many respects, though seasonal variations including the upper stratospheric semiannual oscillation are generally too small. Southern polar dehydration affects midlatitude water vapor mixing ratios by a few tenths of a part per million, mostly after the demise of the vortex. The annual cycle of water vapor in the tropical and northern midlatitude lower stratosphere is dominated by drying at the tropical tropopause. Water vapor has a longer adjustment time than methane and had not reached equilibrium at the end of the 9 years simulated here.

Portable device for generation of ultra-pure water vapor feeds

Science.gov (United States)

Velin, P.; Stenman, U.; Skoglundh, M.; Carlsson, P.-A.

2017-11-01

A portable device for the generation of co-feeds of water vapor has been designed, constructed, and evaluated for flexible use as an add-on component to laboratory chemical reactors. The vapor is formed by catalytic oxidation of hydrogen, which benefits the formation of well-controlled minute concentrations of ultra-pure water. Analysis of the effluent stream by on-line mass spectrometry and Fourier transform infrared spectroscopy confirms that water vapor can be, with high precision, generated both rapidly and steadily over extended periods in the range of 100 ppm to 3 vol. % (limited by safety considerations) using a total flow of 100 to 1500 ml/min at normal temperature and pressure. Further, the device has been used complementary to a commercial water evaporator and mixing system to span water concentrations up to 12 vol. %. Finally, an operando diffuse reflective infrared Fourier transform spectroscopic measurement of palladium catalysed methane oxidation in the absence and presence of up to 1.0 vol. % water has been carried out to demonstrate the applicability of the device for co-feeding well-controlled low concentrations of water vapor to a common type of spectroscopic experiment. The possibilities of creating isotopically labeled water vapor as well as using tracer gases for dynamic experiments are discussed.

An opacity-sampled treatment of water vapor

Science.gov (United States)

Alexander, David R.; Augason, Gordon C.; Johnson, Hollis R.

1989-01-01

Although the bands of H2O are strong in the spectra of cool stars and calculations have repeatedly demonstrated their significance as opacity sources, only approximate opacities are currently available, due both to the difficulty of accounting for the millions of lines involved and to the inadequacy of laboratory and theoretical data. To overcome these obstacles, a new treatment is presented, based upon a statistical representation of the water vapor spectrum derived from available laboratory data. This statistical spectrum of water vapor employs an exponential distribution of line strengths and random positions of lines whose overall properties are forced to reproduce the mean opacities observed in the laboratory. The resultant data set is then treated by the opacity-sampling method exactly as are all other lines, both molecular and atomic. Significant differences are found between the results of this improved treatment and the results obtained with previous treatments of water-vapor opacity.

Water vapor differential absorption lidar development and evaluation

Science.gov (United States)

Browell, E. V.; Wilkerson, T. D.; Mcllrath, T. J.

1979-01-01

A ground-based differential absorption lidar (DIAL) system is described which has been developed for vertical range-resolved measurements of water vapor. The laser transmitter consists of a ruby-pumped dye laser, which is operated on a water vapor absorption line at 724.372 nm. Part of the ruby laser output is transmitted simultaneously with the dye laser output to determine atmospheric scattering and attenuation characteristics. The dye and ruby laser backscattered light is collected by a 0.5-m diam telescope, optically separated in the receiver package, and independently detected using photomultiplier tubes. Measurements of vertical water vapor concentration profiles using the DIAL system at night are discussed, and comparisons are made between the water vapor DIAL measurements and data obtained from locally launched rawinsondes. Agreement between these measurements was found to be within the uncertainty of the rawinsonde data to an altitude of 3 km. Theoretical simulations of this measurement were found to give reasonably accurate predictions of the random error of the DIAL measurements. Confidence in these calculations will permit the design of aircraft and Shuttle DIAL systems and experiments using simulation results as the basis for defining lidar system performance requirements

Modeling film uniformity and symmetry in ionized metal physical vapor deposition with cylindrical targets

International Nuclear Information System (INIS)

Lu Junqing; Yang Lin; Yoon, Jae Hong; Cho, Tong Yul; Tao Guoqing

2008-01-01

Severe asymmetry of the metal deposits on the trench sidewalls occurs near the wafer edge during low pressure ionized metal physical vapor deposition of Cu seed layer for microprocessor interconnects. To investigate this process and mitigate the asymmetry, an analytical view factor model based on the analogy between metal sputtering and diffuse thermal radiation was constructed to investigate deposition uniformity and symmetry for cylindrical target sputtering in low pressure (below 0.1 Pa) ionized Cu physical vapor deposition. The model predictions indicate that as the distance from the cylindrical target to wafer increases, the metal film thickness becomes more uniform across the wafer and the asymmetry of the metal deposits at the wafer edge increases significantly. These trends are similar to those for planar targets. To minimize the asymmetry, the height of the cylindrical target should be kept at a minimum. For cylindrical targets, the outward-facing sidewall of the trench could receive more direct Cu fluxes than the inward-facing one when the target to wafer distance is short. The predictions also indicate that increasing the diameter of the cylindrical target could significantly reduce the asymmetry in metal deposits at the wafer edge and make the film thickness more uniform across the wafer

Chemically vapor-deposited tungsten: its high temperature strength and ductility

International Nuclear Information System (INIS)

Bryant, W.A.

1977-01-01

The high temperature tensile ductility (as measured by total elongation normal to the growth direction) of chemically vapor-deposited tungsten was found to be significantly greater than previously reported. A correlation was found between ductility and void content. However, voids were found to have essentially no effect on the high temperature strength of this material, which is considerably weaker than powder metallurgy tungsten. (Auth.)

Reactive Chemical Vapor Deposition Method as New Approach for Obtaining Electroluminescent Thin Film Materials

Directory of Open Access Journals (Sweden)

Valentina V. Utochnikova

2012-01-01

Full Text Available The new reactive chemical vapor deposition (RCVD method has been proposed for thin film deposition of luminescent nonvolatile lanthanide aromatic carboxylates. This method is based on metathesis reaction between the vapors of volatile lanthanide dipivaloylmethanate (Ln(dpm3 and carboxylic acid (HCarb orH2Carb′ and was successfully used in case of HCarb. Advantages of the method were demonstrated on example of terbium benzoate (Tb(bz3 and o-phenoxybenzoate thin films, and Tb(bz3 thin films were successfully examined in the OLED with the following structure glass/ITO/PEDOT:PSS/TPD/Tb(bz3/Ca/Al. Electroluminescence spectra of Tb(bz3 showed only typical luminescent bands, originated from transitions of the terbium ion. Method peculiarities for deposition of compounds of dibasic acids H2Carb′ are established on example of terbium and europium terephtalates and europium 2,6-naphtalenedicarboxylate.

Preparation of hydrogenated-TiO2/Ti double layered thin films by water vapor plasma treatment

International Nuclear Information System (INIS)

Pranevicius, L.L.; Milcius, D.; Tuckute, S.; Gedvilas, K.

2012-01-01

Highlights: ► We investigated reaction of water plasma with nanocrystalline TiO 2 films. ► Simultaneous oxidation and hydrogenation of Ti was observed during plasma treatment. ► Water plasma treatment forms hydrogenated nanocrystalline TiO 2 in the shallow surface. - Abstract: We have investigated the structural and compositional variations in 200–500 nm thick Ti films deposited by magnetron sputter-deposition technique and treated in water vapor plasma at different processing powers. It was found that the upper layer of treated film with the thickness of 110 nm was changed into the black hydrogenated-TiO 2 with around 16 nm sized nanocystals during 10 min for dissipated power 200 W at room temperature. Analysis of the experimental results is used to obtain insights into the effects of water layer adsorbed on hydrophilic oxidized titanium surfaces exposed to plasma radiation.

Development of an Airborne Micropulse Water Vapor DIAL

Science.gov (United States)

Nehrir, A. R.; Ismail, S.

2012-12-01

Water vapor plays a key role in many atmospheric processes affecting both weather and climate. Airborne measurements of tropospheric water vapor profiles have been a longstanding observational need to not only the active remote sensing community but also to the meteorological, weather forecasting, and climate/radiation science communities. Microscale measurements of tropospheric water vapor are important for enhancing near term meteorological forecasting capabilities while mesoscale and synopticscale measurements can lead to an enhanced understanding of the complex coupled feedback mechanisms between water vapor, temperature, aerosols, and clouds. To realize tropospheric measurements of water vapor profiles over the microscale-synopticscale areas of meteorological interest, a compact and cost effective airborne micropulse differential absorption lidar (DIAL) is being investigated using newly emerging semiconductor based laser technology. Ground based micropulse DIAL (MPD) measurements of tropospheric water vapor and aerosol profiles up to 6 km and 15 km, respectively, have been previously demonstrated using an all semiconductor based laser transmitter. The DIAL transmitter utilizes a master oscillator power amplifier (MOPA) configuration where two semiconductor seed lasers are used to seed a single pass traveling wave tapered semiconductor optical amplifier (TSOA), producing up to 7μJ pulse energies over a 1 μs pulse duration at a 10 kHz pulse repetition frequency (PRF). Intercomparisons between the ground based instrument measurements and radiosonde profiles demonstrating the MPD performance under varying atmospheric conditions will be presented. Work is currently ongoing to expand upon the ground based MPD concept and to develop a compact and cost effective system capable of deployment on a mid-low altitude aircraft such as the NASA Langley B200 King Air. Initial lab experiments show that a two-three fold increase in the laser energy compared to the ground

Deposition characteristics of titanium coating deposited on SiC fiber by cold-wall chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Luo, Xian, E-mail: luo_shenfan@hotmail.com; Wu, Shuai; Yang, Yan-qing; Jin, Na; Liu, Shuai; Huang, Bin

2016-12-01

The deposition characteristics of titanium coating on SiC fiber using TiCl{sub 4}-H{sub 2}-Ar gas mixture in a cold-wall chemical vapor deposition were studied by the combination of thermodynamic analysis and experimental studies. The thermodynamic analysis of the reactions in the TiCl{sub 4}-H{sub 2}-Ar system indicates that TiCl{sub 4} transforms to titanium as the following paths: TiCl{sub 4} → TiCl{sub 3} → Ti, or TiCl{sub 4} → TiCl{sub 3} → TiCl{sub 2} → Ti. The experimental results show that typical deposited coating contains two distinct layers: a TiC reaction layer close to SiC fiber and titanium coating which has an atomic percentage of titanium more than 70% and that of carbon lower than 30%. The results illustrate that a carbon diffusion barrier coating needs to be deposited if pure titanium is to be prepared. The deposition rate increases with the increase of temperature, but higher temperature has a negative effect on the surface uniformity of titanium coating. In addition, appropriate argon gas flow rate has a positive effect on smoothing the surface morphology of the coating. - Highlights: • Both thermodynamic analysis and experimental studies were adopted in this work. • The transformation paths of TiCl{sub 4} to Ti is: TiCl{sub 4} → TiCl{sub 3} → Ti, or TiCl{sub 4} → TiCl{sub 3} → TiCl{sub 2} → Ti. • Typical deposited Ti coating on SiC fiber contained two distinct layers. • Deposition temperature is important on deposition rate and morphologies. • Appropriate argon gas flow rate has a positive effect on smoothing of the coating.

Low temperature synthesis of Zn nanowires by physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Schroeder, Philipp; Kast, Michael; Brueckl, Hubert [Austrian Research Centers GmbH ARC, Nano- Systemtechnologies, Donau-City-Strasse 1, A-1220 Wien (Austria)

2007-07-01

We demonstrate catalytic growth of zinc nanowires by physical vapor deposition at modest temperatures of 125-175 C on various substrates. In contrast to conventional approaches using tube furnaces our home-built growth system allows to control the vapor sources and the substrate temperature separately. The silicon substrates were sputter coated with a thin gold layer as metal catalyst. The samples were heated to the growth temperature and subsequently exposed to the zinc vapor at high vacuum conditions. The work pressure was adjusted by the partial pressure of oxygen or argon flow gas. Scanning electron microscopy and atomic force microscopy characterizations revealed that the nanowires exhibit straight, uniform morphology and have diameters in the range of 50-350 nm and lengths up to 70 {mu}m. The Zn nanowires grow independently of the substrates crystal orientation via a catalytic vapor-solid growth mechanism. Since no nanowire formation was observed without gold coating, we expect that the onedimensional growth is initiated by a surface reactive Au seed. ZnO nanowires can be produced in the same preparation chamber by oxidation at 500 C in 1atm (80% Ar, 20% O{sub 2}) for 1 hour. ZnO is highly attractive for sensor applications.

Vertically aligned carbon nanotube growth by pulsed laser deposition and thermal chemical vapor deposition methods

International Nuclear Information System (INIS)

Sohn, Jung Inn; Nam, Chunghee; Lee, Seonghoon

2002-01-01

We have grown vertically aligned carbon nanotubes on the various substrates such as a planar p-type Si(1 0 0) wafer, porous Si wafer, SiO 2 , Si 3 N 4 , Al 2 O 3 , and Cr by thermal chemical vapor deposition (CVD) at 800 deg.C, using C 2 H 2 gas as a carbon source and Fe catalyst films deposited by a pulsed laser on the substrates. The Fe films were deposited for 5 min by pulsed laser deposition (PLD). The advantage of Fe deposition by PLD over other deposition methods lies in the superior adhesion of Fe to a Si substrate due to high kinetic energies of the generated Fe species. Scanning electron microscopy (SEM) images show that vertically well-aligned carbon nanotubes are grown on Fe nanoparticles formed from the thermal annealing of the Fe film deposited by PLD on the various substrates. Atomic force microscopy (AFM) images show that the Fe film annealed at 800 deg.C is broken to Fe nanoparticles of 10-50 nm in size. We show that the appropriate density of Fe nanoparticles formed from the thermal annealing of the film deposited by PLD is crucial in growing vertically aligned carbon nanotubes. Using a PLD and a lift-off method, we developed the selective growth of carbon nanotubes on a patterned Fe-coated Si substrate

High Temperature Corrosion of Silicon Carbide and Silicon Nitride in Water Vapor

Science.gov (United States)

Opila, E. J.; Robinson, Raymond C.; Cuy, Michael D.; Gray, Hugh R. (Technical Monitor)

2002-01-01

Silicon carbide (SiC) and silicon nitride (Si3N4) are proposed for applications in high temperature combustion environments containing water vapor. Both SiC and Si3N4 react with water vapor to form a silica (SiO2) scale. It is therefore important to understand the durability of SiC, Si3N4 and SiO2 in water vapor. Thermogravimetric analyses, furnace exposures and burner rig results were obtained for these materials in water vapor at temperatures between 1100 and 1450 C and water vapor partial pressures ranging from 0.1 to 3.1 atm. First, the oxidation of SiC and Si3N4 in water vapor is considered. The parabolic kinetic rate law, rate dependence on water vapor partial pressure, and oxidation mechanism are discussed. Second, the volatilization of silica to form Si(OH)4(g) is examined. Mass spectrometric results, the linear kinetic rate law and a volatilization model based on diffusion through a gas boundary layer are discussed. Finally, the combined oxidation and volatilization reactions, which occur when SiC or Si3N4 are exposed in a water vapor-containing environment, are presented. Both experimental evidence and a model for the paralinear kinetic rate law are shown for these simultaneous oxidation and volatilization reactions.

Conformal coverage of poly(3,4-ethylenedioxythiophene) films with tunable nanoporosity via oxidative chemical vapor deposition

NARCIS (Netherlands)

Im, S.G.; Kusters, D.J.N.; Choi, W.; Baxamusa, S.H.; Sanden, van de M.C.M.; Gleason, K.K.

2008-01-01

Novel nanoporous poly(3,4-ethylenedioxythiophene) (PEDOT) films with basalt-like surface morphology are successfully obtained via a one-step, vapor phase process of oxidative chemical vapor deposition (oCVD) by introducing a new oxidant, CuCl2, The substrate temperature of the oCVD process is a

PMMA-Etching-Free Transfer of Wafer-scale Chemical Vapor Deposition Two-dimensional Atomic Crystal by a Water Soluble Polyvinyl Alcohol Polymer Method

Science.gov (United States)

van Ngoc, Huynh; Qian, Yongteng; Han, Suk Kil; Kang, Dae Joon

2016-09-01

We have explored a facile technique to transfer large area 2-Dimensional (2D) materials grown by chemical vapor deposition method onto various substrates by adding a water-soluble Polyvinyl Alcohol (PVA) layer between the polymethyl-methacrylate (PMMA) and the 2D material film. This technique not only allows the effective transfer to an arbitrary target substrate with a high degree of freedom, but also avoids PMMA etching thereby maintaining the high quality of the transferred 2D materials with minimum contamination. We applied this method to transfer various 2D materials grown on different rigid substrates of general interest, such as graphene on copper foil, h-BN on platinum and MoS2 on SiO2/Si. This facile transfer technique has great potential for future research towards the application of 2D materials in high performance optical, mechanical and electronic devices.

Rapid and highly efficient growth of graphene on copper by chemical vapor deposition of ethanol

Energy Technology Data Exchange (ETDEWEB)

Lisi, Nicola, E-mail: nicola.lisi@enea.it [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Buonocore, Francesco; Dikonimos, Theodoros; Leoni, Enrico [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Faggio, Giuliana; Messina, Giacomo [Dipartimento di Ingegneria dell' Informazione, delle Infrastrutture e dell' Energia Sostenibile (DIIES), Università “Mediterranea” di Reggio Calabria, 89122 Reggio Calabria (Italy); Morandi, Vittorio; Ortolani, Luca [CNR-IMM Bologna, Via Gobetti 101, 40129 Bologna (Italy); Capasso, Andrea [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy)

2014-11-28

The growth of graphene by chemical vapor deposition on metal foils is a promising technique to deliver large-area films with high electron mobility. Nowadays, the chemical vapor deposition of hydrocarbons on copper is the most investigated synthesis method, although many other carbon precursors and metal substrates are used too. Among these, ethanol is a safe and inexpensive precursor that seems to offer favorable synthesis kinetics. We explored the growth of graphene on copper from ethanol, focusing on processes of short duration (up to one min). We investigated the produced films by electron microscopy, Raman and X-ray photoemission spectroscopy. A graphene film with high crystalline quality was found to cover the entire copper catalyst substrate in just 20 s, making ethanol appear as a more efficient carbon feedstock than methane and other commonly used precursors. - Highlights: • Graphene films were grown by fast chemical vapor deposition of ethanol on copper. • High-temperature/short-time growth produced highly crystalline graphene. • The copper substrate was entirely covered by a graphene film in just 20 s. • Addition of H{sub 2} had a negligible effect on the crystalline quality.

Comparative study of tantalum deposition by chemical vapor deposition and electron beam vacuum evaporation

International Nuclear Information System (INIS)

Spitz, J.; Chevallier, J.

1975-01-01

The coating by tantalum of steel parts has been carried out by the two following methods: chemical vapor deposition by hydrogen reduction of TaCl 5 (temperature=1100 deg C, pressure=200 mmHg, H 2 /TaCl 5 =10); electron beam vacuum evaporation. In this case Ta was firstly condensed by ion plating (P(Ar)=5x10 -3 up to 2x10 -2 mmHg; U(c)=3 to -4kV and J(c)=0.2 to 1mAcm -2 ) in order to ensure a good adhesion between deposit and substrate; then by vacuum condensation (substrate temperature: 300 to 650 deg C) to ensure that the coating is impervious to HCl an H 2 SO 4 acids. The advantages and inconveniences of each method are discussed [fr

Vaporization of fault water during seismic slip

Science.gov (United States)

Chen, Jianye; Niemeijer, André R.; Fokker, Peter A.

2017-06-01

Laboratory and numerical studies, as well as field observations, indicate that phase transitions of pore water might be an important process in large earthquakes. We present a model of the thermo-hydro-chemo-mechanical processes, including a two-phase mixture model to incorporate the phase transitions of pore water, occurring during fast slip (i.e., a natural earthquake) in order to investigate the effects of vaporization on the coseismic slip. Using parameters from typical natural faults, our modeling shows that vaporization can indeed occur at the shallow depths of an earthquake, irrespective of the wide variability of the parameters involved (sliding velocity, friction coefficient, gouge permeability and porosity, and shear-induced dilatancy). Due to the fast kinetics, water vaporization can cause a rapid slip weakening even when the hydrological conditions of the fault zone are not favorable for thermal pressurization, e.g., when permeability is high. At the same time, the latent heat associated with the phase transition causes the temperature rise in the slip zone to be buffered. Our parametric analyses reveal that the amount of frictional work is the principal factor controlling the onset and activity of vaporization and that it can easily be achieved in earthquakes. Our study shows that coseismic pore fluid vaporization might have played important roles at shallow depths of large earthquakes by enhancing slip weakening and buffering the temperature rise. The combined effects may provide an alternative explanation for the fact that low-temperature anomalies were measured in the slip zones at shallow depths of large earthquakes.

The versatility of hot-filament activated chemical vapor deposition

International Nuclear Information System (INIS)

Schaefer, Lothar; Hoefer, Markus; Kroeger, Roland

2006-01-01

In the field of activated chemical vapor deposition (CVD) of polycrystalline diamond films, hot-filament activation (HF-CVD) is widely used for applications where large deposition areas are needed or three-dimensional substrates have to be coated. We have developed processes for the deposition of conductive, boron-doped diamond films as well as for tribological crystalline diamond coatings on deposition areas up to 50 cm x 100 cm. Such multi-filament processes are used to produce diamond electrodes for advanced electrochemical processes or large batches of diamond-coated tools and parts, respectively. These processes demonstrate the high degree of uniformity and reproducibility of hot-filament CVD. The usability of hot-filament CVD for diamond deposition on three-dimensional substrates is well known for CVD diamond shaft tools. We also develop interior diamond coatings for drawing dies, nozzles, and thread guides. Hot-filament CVD also enables the deposition of diamond film modifications with tailored properties. In order to adjust the surface topography to specific applications, we apply processes for smooth, fine-grained or textured diamond films for cutting tools and tribological applications. Rough diamond is employed for grinding applications. Multilayers of fine-grained and coarse-grained diamond have been developed, showing increased shock resistance due to reduced crack propagation. Hot-filament CVD is also used for in situ deposition of carbide coatings and diamond-carbide composites, and the deposition of non-diamond, silicon-based films. These coatings are suitable as diffusion barriers and are also applied for adhesion and stress engineering and for semiconductor applications, respectively

Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

KAUST Repository

Qaisi, Ramy M.; Smith, Casey; Hussain, Muhammad Mustafa

2014-01-01

We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

KAUST Repository

Qaisi, Ramy M.

2014-05-15

We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cracking and delamination of vapor-deposited tantalum films

International Nuclear Information System (INIS)

Fisher, R.M.; Duan, J.Z.; Liu, J.B.

1990-01-01

This paper reports on tantalum films which begin to crack and spall during vapor deposition on glass at a thickness of 180 nm. Islands and ribbons, 10 - 30 μm in size, delaminate by crack growth along the Ta/glass interface for several μm after which the crack penetrates into the glass to a depth of 0.5 - 1 μm and complete spalling occurs. X-ray diffraction showed that about 50% of the original bct, β-tantalum, phase had transformed to the bcc α-Ta phase. When Ta was deposited on glass that was first covered with 52 nm of copper, spalling was observed to begin at a thickness of 105 nm. In this case, the film first cracks and then peels along the Cu/glass interface and curls into scrolls indicating the presence of a small stress gradient. X-ray diffraction of the as-deposited film, and electron diffraction of ion-milled flakes, showed that the Ta films deposited on Cu-coated glass almost completely transform to bcc α-Ta. The critical thickness for delamination along the Cu/glass interface is about 1/2 that for cracking in the glass substrate when an intermediate layer of Cu is not present. All of the above findings are in good agreement with previous observations on Cr films

Visualization of Atmospheric Water Vapor Data for SAGE

Science.gov (United States)

Kung, Mou-Liang; Chu, W. P. (Technical Monitor)

2000-01-01

The goal of this project was to develop visualization tools to study the water vapor dynamics using the Stratospheric Aerosol and Gas Experiment 11 (SAGE 11) water vapor data. During the past years, we completed the development of a visualization tool called EZSAGE, and various Gridded Water Vapor plots, tools deployed on the web to provide users with new insight into the water vapor dynamics. Results and experiences from this project, including papers, tutorials and reviews were published on the main Web page. Additional publishing effort has been initiated to package EZSAGE software for CD production and distribution. There have been some major personnel changes since Fall, 1998. Dr. Mou-Liang Kung, a Professor of Computer Science assumed the PI position vacated by Dr. Waldo Rodriguez who was on leave. However, former PI, Dr. Rodriguez continued to serve as a research adviser to this project to assure smooth transition and project completion. Typically in each semester, five student research assistants were hired and trained. Weekly group meetings were held to discuss problems, progress, new research direction, and activity planning. Other small group meetings were also held regularly for different objectives of this project. All student research assistants were required to submit reports for conference submission.

Adsorption of radon and water vapor on commercial activated carbons

International Nuclear Information System (INIS)

Hassan, N.M.; Ghosh, T.K.; Hines, A.L.; Loyalka, S.K.

1995-01-01

Equilibrium adsorption isotherms are reported for radon and water vapor on two commercial activated carbons: coconut shell Type PCB and hardwood Type BD. The isotherms of the water vapor were measured gravimetrically at 298 K. The isotherms of radon from dry nitrogen were obtained at 293, 298, and 308 K while the data for the mixture of radon and water vapor were measured at 298 K. The concentrations of radon in the gas and solid phases were measured simultaneously, once the adsorption equilibrium and the radioactive equilibrium between the radon and its daughter products were established. The shape of the isotherms was of Type III for the radon and Type V for the water vapor, according to Brunauer's classification. The adsorption mechanism was similar for both the radon and the water vapor, being physical adsorption on the macropore surface area in the low pressure region and micropore filling near saturation pressure. The uptake capacity of radon decreased both with increasing temperature and relative humidity. The heat of adsorption data indicated that the PCB- and the BD-activated carbons provided a heterogeneous surface for radon adsorption. The equilibrium data for radon were correlated with a modified Freundlich equation

Kinetic Study of the Chemical Vapor Deposition of Tantalum in Long Narrow Channels

DEFF Research Database (Denmark)

Mugabi, James Atwoki; Eriksen, Søren; Petrushina, Irina

2016-01-01

A kinetic study of the chemical vapor deposition of tantalum in long narrow channels is done to optimize the industrial process for the manufacture of tantalum coated plate heat exchangers. The developed model fits well at temperatures between 750 and 850 °C, and in the pressure range of25–990 mbar....... According to the model, the predominant tantalum growth species is TaCl3. The temperature is shown to have a pronounced effect onthe morphology and rate of deposition of the tantalum and an apparent change in deposition mechanism occurs between 850–900 °C, resulting in the deposition rate at 900 °C being...

Problems of hydrogen - water vapor - inert gas mixture use in heavy liquid metal coolant technology

International Nuclear Information System (INIS)

Ul'yanov, V.V.; Martynov, P.N.; Gulevskij, V.A.; Teplyakov, Yu.A.; Fomin, A.S.

2014-01-01

The reasons of slag deposit formation in circulation circuits with heavy liquid metal coolants, which can cause reactor core blockage, are considered. To prevent formation of deposits hydrogen purification of coolant and surfaces of circulation circuit is used. It consists in introduction of gaseous mixtures hydrogen - water vapor - rare gas (argon or helium) directly into coolant flow. The principle scheme of hydrogen purification and the processes occurring during it are under consideration. Measures which make it completely impossible to overlap of the flow cross section of reactor core, steam generators, pumps and other equipment by lead oxides in reactor facilities with heavy liquid metal coolants are listed [ru

Polybenzimidazole-based mixed membranes with exceptional high water vapor permeability and selectivity

KAUST Repository

Akhtar, Faheem Hassan

2017-09-13

Polybenzimidazole (PBI), a thermal and chemically stable polymer, is commonly used to fabricate membranes for applications like hydrogen recovery at temperatures of more than 300 °C, fuel cells working in a highly acidic environment, and nanofiltration in aggressive solvents. This report shows for the first time use of PBI dense membranes for water vapor/gas separation applications. They showed an excellent selectivity and high water vapor permeability. Incorporation of inorganic hydrophilic titanium-based nano-fillers into the PBI matrix further increased the water vapor permeability and water vapor/N2 selectivity. The most selective mixed matrix membrane with 0.5 wt% loading of TiO2 nanotubes yielded a water vapor permeability of 6.8×104 Barrer and a H2O/N2 selectivity of 3.9×106. The most permeable membrane with 1 wt% loading of carboxylated TiO2 nanoparticles had a 7.1×104 Barrer water vapor permeability and a H2O/N2 selectivity of 3.1×106. The performance of these membranes in terms of water vapor transport and selectivity is among the highest reported ones. The remarkable ability of PBI to efficiently permeate water versus other gases opens the possibility to fabricate membranes for dehumidification of streams in harsh environments. This includes the removal of water from high temperature reaction mixtures to shift the equilibrium towards products.

Polybenzimidazole-based mixed membranes with exceptional high water vapor permeability and selectivity

KAUST Repository

Akhtar, Faheem Hassan; Kumar, Mahendra; Villalobos, Luis Francisco; Shevate, Rahul; Vovusha, Hakkim; Schwingenschlö gl, Udo; Peinemann, Klaus-Viktor

2017-01-01

Polybenzimidazole (PBI), a thermal and chemically stable polymer, is commonly used to fabricate membranes for applications like hydrogen recovery at temperatures of more than 300 °C, fuel cells working in a highly acidic environment, and nanofiltration in aggressive solvents. This report shows for the first time use of PBI dense membranes for water vapor/gas separation applications. They showed an excellent selectivity and high water vapor permeability. Incorporation of inorganic hydrophilic titanium-based nano-fillers into the PBI matrix further increased the water vapor permeability and water vapor/N2 selectivity. The most selective mixed matrix membrane with 0.5 wt% loading of TiO2 nanotubes yielded a water vapor permeability of 6.8×104 Barrer and a H2O/N2 selectivity of 3.9×106. The most permeable membrane with 1 wt% loading of carboxylated TiO2 nanoparticles had a 7.1×104 Barrer water vapor permeability and a H2O/N2 selectivity of 3.1×106. The performance of these membranes in terms of water vapor transport and selectivity is among the highest reported ones. The remarkable ability of PBI to efficiently permeate water versus other gases opens the possibility to fabricate membranes for dehumidification of streams in harsh environments. This includes the removal of water from high temperature reaction mixtures to shift the equilibrium towards products.

Water vapor absorption in the atmospheric window at 239 GHz

Science.gov (United States)

Bauer, A.; Godon, M.; Carlier, J.; Ma, Q.

1995-01-01

Absolute absorption rates of pure water vapor and mixtures of water vapor and nitrogen have been measured in the atmospheric window at 239 GHz. The dependence on pressure as well as temperature has been obtained. The experimental data are compared with several theoretical or empirical models, and satisfactory agreement is obtained with the models involving a continuum; in the case of pure water vapor, the continuum contribution based upon recent theoretical developments gives good results. The temperature dependence is stronger than that proposed in a commonly used atmospheric transmission model.

Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Boettcher, Shannon [Univ. of Oregon, Eugene, OR (United States); Greenaway, Ann [Univ. of Oregon, Eugene, OR (United States); Boucher, Jason [Univ. of Oregon, Eugene, OR (United States); Aloni, Shaul [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

2016-02-10

Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher efficiency devices are needed to reduce cost further because the balance of systems account for about two-thirds of the overall cost of the solar electricity. III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic devices, but the costs of manufacture are much too high for non-concentrated terrestrial applications. The cost of III-V’s is driven by two factors: (1) metal-organic chemical vapor deposition (MOCVD), the dominant growth technology, employs expensive, toxic and pyrophoric gas-phase precursors, and (2) the growth substrates conventionally required for high-performance devices are monocrystalline III-V wafers. The primary goal of this project was to show that close-spaced vapor transport (CSVT), using water vapor as a transport agent, is a scalable deposition technology for growing low-cost epitaxial III-V photovoltaic devices. The secondary goal was to integrate those devices on Si substrates for high-efficiency tandem applications using interface nanopatterning to address the lattice mismatch. In the first task, we developed a CSVT process that used only safe solid-source powder precursors to grow epitaxial GaAs with controlled n and p doping and mobilities/lifetimes similar to that obtainable via MOCVD. Using photoelectrochemical characterization, we showed that the best material had near unity internal quantum efficiency for carrier collection and minority carrier diffusions lengths in of ~ 8 μm, suitable for PV devices with >25% efficiency. In the second task we developed the first pn junction photovoltaics using CSVT and showed unpassivated structures with open circuit photovoltages > 915 mV and internal quantum efficiencies >0.9. We also characterized morphological and electrical defects and identified routes to reduce those defects. In task three we grew epitaxial

Femtosecond fluorescence upconversion spectroscopy of vapor-deposited tris(8-hydroxyquinoline) aluminum films.

NARCIS (Netherlands)

Humbs, W.; Zhang, H.; Glasbeek, M.

2000-01-01

Abstract Vapor-deposited Alq3 is used as the green emitting layer in a class of organic light-emitting diodes. In this paper, the time dependence of the fluorescence from thin Alq3 films has been studied by means of the femtosecond fluorescence upconversion technique. From the temporally resolved

GOES WATER VAPOR TRANSPORT V1

Data.gov (United States)

National Aeronautics and Space Administration — The GOES Water Vapor Transport CD contains nineteen months of geostationary satellite-derived products spanning the 1987/1988 El Nino Southern Oscillation (ENSO)...

The Mars water cycle

Science.gov (United States)

Davies, D. W.

1981-01-01

A model has been developed to test the hypothesis that the observed seasonal and latitudinal distribution of water on Mars is controlled by the sublimation and condensation of surface ice deposits in the Arctic and Antarctic, and the meridional transport of water vapor. Besides reproducing the observed water vapor distribution, the model correctly reproduces the presence of a large permanent ice cap in the Arctic and not in the Antarctic. No permanent ice reservoirs are predicted in the temperate or equatorial zones. Wintertime ice deposits in the Arctic are shown to be the source of the large water vapor abundances observed in the Arctic summertime, and the moderate water vapor abundances in the northern temperate region. Model calculations suggest that a year without dust storms results in very little change in the water vapor distribution. The current water distribution appears to be the equilibrium distribution for present atmospheric conditions.

Mechanical properties of vapor-deposited thin metallic films: a status report

International Nuclear Information System (INIS)

Adler, P.H.

1982-01-01

The mechanical properties of vapor-deposited thin metallic films are being studied in conjunction with the target fabrication group associated with the laser-fusion energy program. The purpose of the work is to gain an understanding as to which metals are structurally best suited to contain a glass microsphere filled with deuterium-tritium (D-T) gas at large internal pressures

Ultrasharp Si nanowires produced by plasma-enhanced chemical vapor deposition

Czech Academy of Sciences Publication Activity Database

Červenka, Jiří; Ledinský, Martin; Stuchlíková, The-Ha; Stuchlík, Jiří; Výborný, Zdeněk; Holovský, Jakub; Hruška, Karel; Fejfar, Antonín; Kočka, Jan

2010-01-01

Roč. 4, 1-2 (2010), s. 37-39 ISSN 1862-6254 R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanowires * silicon * scanning electron microscopy * hemical vapor deposition * Raman spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.660, year: 2010 http://www3.interscience.wiley.com/ cgi -bin/fulltext/123213957/HTMLSTART

Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

KAUST Repository

Gomez De Arco, Lewis; Zhang, Yi; Schlenker, Cody W.; Ryu, Koungmin; Thompson, Mark E.; Zhou, Chongwu

2010-01-01

We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD

GOES WATER VAPOR TRANSPORT V1

Data.gov (United States)

National Aeronautics and Space Administration — The GOES Water Vapor Transport CD contains nineteen months of geostationary satellite-derived products from the GOES-8 satellite spanning the 1987-1988 El Nino...

Buoyancy-Driven Heat Transfer During Application of a Thermal Gradient for the Study of Vapor Deposition at Low Pressure Using and Ideal Gas

Science.gov (United States)

Frazier, D. O.; Hung, R. J.; Paley, M. S.; Penn, B. G.; Long, Y. T.

1996-01-01

A mathematical model has been developed to determine heat transfer during vapor deposition of source materials under a variety of orientations relative to gravitational accelerations. The model demonstrates that convection can occur at total pressures as low as 10-2 mm Hg. Through numerical computation, using physical material parameters of air, a series of time steps demonstrates the development of flow and temperature profiles during the course of vapor deposition. These computations show that in unit gravity vapor deposition occurs by transport through a fairly complicated circulating flow pattern when applying heat to the bottom of the vessel with parallel orientation with respect to the gravity vector. The model material parameters for air predict the effect of kinematic viscosity to be of the same order as thermal diffusivity, which is the case for Prandtl number approx. 1 fluids. Qualitative agreement between experiment and the model indicates that 6-(2-methyl-4-nitroanilino)-2,4-hexadiyn-l-ol (DAMNA) at these pressures indeed approximates an ideal gas at the experiment temperatures, and may validate the use of air physical constants. It is apparent that complicated nonuniform temperature distribution in the vapor could dramatically affect the homogeneity, orientation, and quality of deposited films. The experimental test i's a qualitative comparison of film thickness using ultraviolet-visible spectroscopy on films generated in appropriately oriented vapor deposition cells. In the case where heating of the reaction vessel occurs from the top, deposition of vapor does not normally occur by convection due to a stable stratified medium. When vapor deposition occurs in vessels heated at the bottom, but oriented relative to the gravity vector between these two extremes, horizontal thermal gradients induce a complex flow pattern. In the plane parallel to the tilt axis, the flow pattern is symmetrical and opposite in direction from that where the vessel is

Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application

International Nuclear Information System (INIS)

Su, Meiying; Yu, Daquan; Liu, Yijun; Wan, Lixi; Song, Chongshen; Dai, Fengwei; Xue, Kai; Jing, Xiangmeng; Guidotti, Daniel

2014-01-01

The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO 2 films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. - Highlights: • Tetraethyl orthosilicate-based oxide films were deposited for packaging application. • The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400 °C. • The PECVD oxide films exhibit good step coverage. • The 400 °C PECVD oxide films exhibit low thermal stress and current leakage. • The 400 °C PECVD oxide films show high breakdown voltage and acceptable permittivity

Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application

Energy Technology Data Exchange (ETDEWEB)

Su, Meiying, E-mail: sumeiying@ime.ac.cn [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Yu, Daquan, E-mail: yudaquan@ime.ac.cn [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Jiangsu R and D Center for Internet of Things, Wuxi 214135 (China); Liu, Yijun [Piotech Co. Ltd, Shenyang 110179 (China); Wan, Lixi [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Song, Chongshen; Dai, Fengwei [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Xue, Kai [National Center for Advanced Packaging, Wuxi 214135 (China); Jing, Xiangmeng [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Guidotti, Daniel [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China)

2014-01-01

The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO{sub 2} films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. - Highlights: • Tetraethyl orthosilicate-based oxide films were deposited for packaging application. • The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400 °C. • The PECVD oxide films exhibit good step coverage. • The 400 °C PECVD oxide films exhibit low thermal stress and current leakage. • The 400 °C PECVD oxide films show high breakdown voltage and acceptable permittivity.

Diamond-like carbon films deposited on polycarbonates by plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Guo, C.T. [Department of Computer and Communication, Diwan College of Management, 72141 Taiwan (China)], E-mail: ctguo@dwu.edu.tw

2008-04-30

Diamond-like carbon films were coated on optical polycarbonate using plasma-enhanced chemical vapor deposition. A mixture of SiH{sub 4} and CH{sub 4}/H{sub 2} gases was utilized to reduce the internal compressive stress of the deposited films. The structure of the DLC films was characterized as a function of film thickness using Raman spectroscopy. The dependence of G peak positions and the intensity ratio of I{sub D}/I{sub G} on the DLC film thicknesses was analyzed in detail. Other studies involving atomic force microscopy, ultraviolet visible spectrometry, and three adhesion tests were conducted. Good transparency in the visible region, and good adhesion between diamond-like carbon films and polycarbonate were demonstrated. One-time recordings before and after a DLC film was coated on compact rewritable disc substrates were analyzed as a case study. The results reveal that the diamond-like carbon film overcoating the optical polycarbonates effectively protects the storage media.

Tropical stratospheric water vapor measured by the microwave limb sounder (MLS)

Science.gov (United States)

Carr, E. S.; Harwood, R. S.; Mote, P. W.; Peckham, G. E.; Suttie, R. A.; Lahoz, W. A.; O'Neill, A.; Froidevaux, L.; Jarnot, R. F.; Read, W. G.

1995-01-01

The lower stratospheric variability of equatorial water vapor, measured by the Microwave Limb Sounder (MLS), follows an annual cycle modulated by the quasi-biennial oscillation. At levels higher in the stratosphere, water vapor measurements exhibit a semi-annual oscillatory signal with the largest amplitudes at 2.2 and 1hPa. Zonal-mean cross sections of MLS water vapor are consistent with previous satellite measurements from the limb infrared monitor of the stratosphere (LIMS) and the stratospheric Aerosol and Gas Experiment 2 (SAGE 2) instruments in that they show water vapor increasing upwards and the polewards from a well defined minimum in the tropics. The minimum values vary in height between the retrieved 46 and 22hPa pressure levels.

Vapor compression distiller and membrane technology for water revitalization

Science.gov (United States)

Ashida, A.; Mitani, K.; Ebara, K.; Kurokawa, H.; Sawada, I.; Kashiwagi, H.; Tsuji, T.; Hayashi, S.; Otsubo, K.; Nitta, K.

1987-01-01

Water revitalization for a space station can consist of membrane filtration processes and a distillation process. Water recycling equipment using membrane filtration processes was manufactured for ground testing. It was assembled using commercially available components. Two systems for the distillation are studied: one is absorption type thermopervaporation cell and the other is a vapor compression distiller. Absorption type thermopervaporation, able to easily produce condensed water under zero gravity, was investigated experimentally and through simulated calculation. The vapor compression distiller was studied experimentally and it offers significant energy savings for evaporation of water.

Magmatic Vapor Phase Transport of Copper in Reduced Porphyry Copper-Gold Deposits: Evidence From PIXE Microanalysis of Fluid Inclusions

Science.gov (United States)

Rowins, S. M.; Yeats, C. J.; Ryan, C. G.

2002-05-01

Nondestructive proton-induced X-ray emission (PIXE) studies of magmatic fluid inclusions in granite-related Sn-W deposits [1] reveal that copper transport out of reduced felsic magmas is favored by low-salinity vapor and not co-existing high-salinity liquid (halite-saturated brine). Copper transport by magmatic vapor also has been documented in oxidized porphyry Cu-Au deposits, but the magnitude of Cu partitioning into the vapor compared to the brine generally is less pronounced than in the reduced magmatic Sn-W systems [2]. Consideration of these microanalytical data leads to the hypothesis that Cu and, by inference, Au in the recently established "reduced porphyry copper-gold" (RPCG) subclass should partition preferentially into vapor and not high-salinity liquid exsolving directly from fluid-saturated magmas [3-4]. To test this hypothesis, PIXE microanalysis of primary fluid inclusions in quartz-sulfide (pyrite, pyrrhotite & chalcopyrite) veins from two RPCG deposits was undertaken using the CSIRO-GEMOC nuclear microprobe. PIXE microanalysis for the ~30 Ma San Anton deposit (Mexico) was done on halite-saturated aqueous brine (deposit (W. Australia) was done on halite-saturated "aqueous" inclusions, which contain a small (deposits of the new RPCG subclass demonstrate the greater potential of these systems, compared to the classically oxidized porphyry Cu-Au systems, to transport Cu and probably precious metals in a magmatic aqueous vapor phase. These PIXE data also support the possibility that Cu partitions preferentially into an immiscible CO2-rich magmatic fluid. References: [1] Heinrich, C.A. et al. (1992) Econ. Geol., 87, 1566-1583. [2] Heinrich, C.A. et al. (1999) Geology, 27, 755-758. [3] Rowins, S.M. (2000) Geology, 28, 491-494. [4] Rowins, S.M. (2000) The Gangue, GAC-MDD Newsletter, 67, 1-7 (www.gac.ca). [5] Rowins, S.M. et al. (1993) Geol. Soc. Australia Abs., 34, 68-70.

Water vapor-nitrogen absorption at CO2 laser frequencies

Science.gov (United States)

Peterson, J. C.; Thomas, M. E.; Nordstrom, R. J.; Damon, E. K.; Long, R. K.

1979-01-01

The paper reports the results of a series of pressure-broadened water vapor absorption measurements at 27 CO2 laser frequencies between 935 and 1082 kaysers. Both multiple traversal cell and optoacoustic (spectrophone) techniques were utilized together with an electronically stabilized CW CO2 laser. Comparison of the results obtained by these two methods shows remarkable agreement, indicating a precision which has not been previously achieved in pressure-broadened studies of water vapor. The data of 10.59 microns substantiate the existence of the large (greater than 200) self-broadening coefficients determined in an earlier study by McCoy. In this work, the case of water vapor in N2 at a total pressure of 1 atm has been treated.

Water-Vapor Raman Lidar System Reaches Higher Altitude

Science.gov (United States)

Leblanc, Thierry; McDermid, I. Stewart

2010-01-01

A Raman lidar system for measuring the vertical distribution of water vapor in the atmosphere is located at the Table Mountain Facility (TMF) in California. Raman lidar systems for obtaining vertical water-vapor profiles in the troposphere have been in use for some time. The TMF system incorporates a number of improvements over prior such systems that enable extension of the altitude range of measurements through the tropopause into the lower stratosphere. One major obstacle to extension of the altitude range is the fact that the mixing ratio of water vapor in the tropopause and the lower stratosphere is so low that Raman lidar measurements in this region are limited by noise. Therefore, the design of the TMF system incorporates several features intended to maximize the signal-to-noise ratio. These features include (1) the use of 355-nm-wavelength laser pulses having an energy (0.9 J per pulse) that is high relative to the laser-pulse energy levels of prior such systems, (2) a telescope having a large aperture (91 cm in diameter) and a narrow field of view (angular width .0.6 mrad), and (3) narrow-bandpass (wavelength bandwidth 0.6 nm) filters for the water-vapor Raman spectral channels. In addition to the large-aperture telescope, three telescopes having apertures 7.5 cm in diameter are used to collect returns from low altitudes.

Precise control of multiwall carbon nanotube diameters using thermal chemical vapor deposition

Science.gov (United States)

Siegal, M. P.; Overmyer, D. L.; Provencio, P. P.

2002-03-01

We grow multiwall carbon nanotube (CNT) films using thermal chemical vapor deposition at atmospheric pressure using a mixture of acetylene and nitrogen from a 4-nm-thick Ni film catalyst. CNTs are characterized using electron microscopy and Rutherford backscattering spectrometry. CNTs grown with this method are extremely uniform in diameter, both throughout the sample and within the lengths of individual tubes. Nanotube outer diameters, ranging from 5-350 nm, and the total deposition of carbon material, increase exponentially with growth temperature from 630 °C-790 °C.

Reaction rate constant for uranium in water and water vapor

Energy Technology Data Exchange (ETDEWEB)

TRIMBLE, D.J.

1998-11-09

The literature on uranium oxidation in water and oxygen free water vapor was reviewed. Arrhenius rate equations were developed from the review data. These data and equations will be used as a baseline from which to compare reaction rates measured for K Basin fuel.

Vaporization Rate Analysis of Primary Cooling Water from Reactor PUSPATI TRIGA (RTP) Tank

International Nuclear Information System (INIS)

Tonny Anak Lanyau; Mohd Fazli Zakaria; Yahya Ismail

2011-01-01

Primary cooling system consists of pumps, heat exchangers, probes, a nitrogen-16 diffuser and associated valves is connected to the reactor TRIGA PUSPATI (RTP) tank by aluminium pipes. Both the primary cooling system and the reactor tank is filled with demineralized light water (H 2 O), which serves as a coolant, moderator as well as shielding. During reactor operation, vaporization in the reactor tank will reduce the primary water and contribute to the formation of vapor in the reactor hall. The vaporization may influence the function of the water subsequently may affect the safety of the reactor operation. It is essential to know the vaporization rate of the primary water to ensure its functionality. This paper will present the vaporization rate of the primary cooling water from the reactor tank and the influence of temperature of the water in the reactor tank to the vaporization rate. (author)

Dynamic scaling and kinetic roughening of poly(ethylene) islands grown by vapor phase deposition

Czech Academy of Sciences Publication Activity Database

Choukourov, A.; Melnichuk, I.; Gordeev, I.; Kylián, O.; Hanuš, J.; Kousal, J.; Solař, P.; Hanyková, L.; Brus, Jiří; Slavínská, D.; Biederman, H.

2014-01-01

Roč. 565, 28 August (2014), s. 249-260 ISSN 0040-6090 Institutional support: RVO:61389013 Keywords : poly(ethylene) * physical vapor deposition * island growth Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.759, year: 2014

New luminescence lines in nanodiamonds obtained by chemical vapor deposition

Science.gov (United States)

Golubev, V. G.; Grudinkin, S. A.; Davydov, V. Yu.; Smirnov, A. N.; Feoktistov, N. A.

2017-12-01

The spectral characteristics of the photoluminescence lines detected for nanodiamonds obtained by the reactive ion etching of diamond particles in oxygen plasma, deposited by chemical vapor deposition on a silicon substrate, are studied. At room temperature, narrow lines are observed in the visible and infrared spectral regions, with a full width at half-maximum in the range of 1-2 nm at an almost complete absence of a broadband photoluminescence background signal. At decreasing temperature, the lines narrowed to 0.2-0.6 nm at T = 79 K, and the minimum line width was 0.055 nm at T = 10 K. With increasing temperature, the narrow lines shifted to the long-wavelength region of the spectrum, and their intensity decreased.

Process-property relationships of SiC chemical vapor deposition in the Si/H/C/O system

International Nuclear Information System (INIS)

Richardson, C.; Takoudis, C.G.

1999-01-01

The thermal, chemical, and physical properties of SiC make it an attractive material for a wide range of applications from wear resistant coatings on tools to high temperature microelectronics operations. A comprehensive thermodynamic analysis has been performed for the Si/H/C/O system from which a priori process-property relationships of the chemical vapor deposition (CVD) of silicon carbide (SiC) are obtained. The parameter space for pure silicon carbide growth is reported for five orders of magnitude of the system water vapor level (1 ppb--100 ppm), four orders of magnitude of system pressure (0.1--760 Torr), and two orders of magnitude of C/Si feed ratio (0.25--20) and H 2 /Si feed ratio (50--10,000). Lower growth temperatures for pure SiC are predicted in clean systems with low system water vapor levels, at stoichiometric to near carbon excess conditions (C/Si ≅ 1 to C/Si > 1), at high carrier gas flow rates (large H 2 /Si feed ratios), and at low operating pressures. Because relative C/Si and H 2 /Si feed ratios have been considered, the predictions in this study are applicable to both multiple and single precursor systems. Further, these results are valid for the CVD of α-SiC as well as β-SiC. Experimental data reported on the growth of α-SiC and β-SiC are found to be in satisfactory agreement with the theoretical predictions, for numerous systems that include multiple and single source, silicon and carbon, species

Single-crystalline AlN growth on sapphire using physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Cardenas-Valencia, Andres M., E-mail: andres.cardenas@sri.co [SRI International (United States); Onishi, Shinzo; Rossie, Benjamin [SRI International (United States)

2011-02-07

A novel technique for growing single crystalline aluminum nitride (AlN) films is presented. The novelty of the technique, specifically, comes from the use of an innovative physical vapor deposition magnetron sputtering tool, which embeds magnets into the target material. A relatively high deposition rates is achieved ({approx}0.2 {mu}m/min), at temperatures between 860 and 940 {sup o}C. The AlN, grown onto sapphire, is single-crystalline as evidenced by observation using transmission electron microscopy. Tool configuration and growth conditions are discussed, as well as a first set of other analytical results, namely, x-ray diffraction and ultraviolet-visible transmission spectrophotometry.

The transient creep of vapor deposited Ti-6Al-4V

International Nuclear Information System (INIS)

Warren, J.; Wadley, H.N.G.

1996-01-01

Titanium matrix composites can be synthesized by the consolidation of ceramic fibers (for example, alumina and silicon carbide monofilaments) coated with titanium alloy deposited on the fiber by physical vapor deposition (PVD). Consolidation involves deformation of the matrix coating by both transient and steady-state creep. In a recent paper the mechanisms responsible for steady-state creep in PVD Ti-6Al-4V, between 600 and 900 C, were determined. The analysis of the data first presented has been extended here to consider the transient creep behavior of the material and identify an analogous constitutive law for use in simulating the transient creep contribution to consolidation

Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

Science.gov (United States)

Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

2008-01-01

Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

The Planck-Benzinger thermal work function in the condensation of water vapor

Science.gov (United States)

Chun, Paul W.

Based on the Planck-Benzinger thermal work function using Chun's method, the innate temperature-invariant enthalpy at 0 K, ?H0(T0), for the condensation of water vapor as well as the dimer, trimer, tetramer, and pentamer form in the vapor phase, was determined to be 0.447 kcal mol-1 for vapor, 1.127 for the dimer, 0.555 for the trimer, 0.236 for the tetramer, and 0.079 kcal mol-1 for the pentamer using ?G(T) data reported by Kell et al. in 1968 and Kell and McLaurin in 1969. These results suggest that the predominant dimeric form is the most stable of these n-mers. Using Nemethy and Scheraga's 1962 data for the Helmholtz free energy of liquid water, the value of ?H0(T0) was determined to be 1.21 kcal mol-1. This is very close to the value for the energy of the hydrogen bond EH of 1.32 kcal mol-1 reported by Nemethy and Scheraga, using statistical thermodynamics. It seems clear that very little energy is required for interconversion between the hypothetical supercooled water vapor and glassy water at 0 K. A hypothetical supercooled water vapor at 0 K is apparently almost as highly associated as glassy water at that temperature, suggesting a dynamic equilibrium between vapor and liquid. This water vapor condensation is highly similar in its thermodynamic behavior to that of sequence-specific pairwise (dipeptide) hydrophobic interaction, except that the negative Gibbs free energy change minimum at ?Ts?, the thermal setpoint for vapor condensation, where T?S = 0, occurs at a considerably lower temperature, 270 K (below 0°C) compared with ?350 K. The temperature of condensation ?Tcond? at which ?G(T) = 0, where water vapor begins to condense, was found to be 383 K. In the case of a sequence-specific pairwise hydrophobic interaction, the melting temperature, ?Tm?, where ?G(Tm) = 0 was found to be 460 K. Only between two temperature limits, ?Th? = 99 K and ?Tcond? = 383 K, where ?G(Tcond) = 0, is the net chemical driving force favorable for polymorphism of glassy water

Control of sodium vapor transport in annuli

International Nuclear Information System (INIS)

Meadows, G.E.; Bohringer, A.P.

1983-11-01

The method used to control sodium vapor transport in the annuli of various components at the Fast Flux Test Facility (FFTF) is a downward purge of the annuli with high purity argon. The purge rates for the FFTF were selected by calculating the gas velocity required to overcome thermal convection transport in the annuli. To evaluate the effectiveness of the gas purge, laboratory apparatus was fabricated which simulated selected annuli in the FFTF In-Vessel Handling Machine (IVHM) and the Instrument Tree (IT) annuli. Tests were conducted at temperatures similar to FFTF conditions. Gas purge rates ranged from zero to 130% of FFTF flow rates. Test results show the effectiveness of a high purity gas purge in decreasing the accumulation of sodium vapor deposits in an annulus. The presence of water vapor and oxygen in the purge gas increased the sodium deposition rate by a factor of three over other tests usig high purity argon. The presence of a vapor control collar used in the IT annulus was shown to be beneficial for controlling vapor transport into the upper region of the annulus

Direct dry transfer of chemical vapor deposition graphene to polymeric substrates

OpenAIRE

Fechine, Guilhermino J. M.; Martin-Fernandez, Inigo; Yiapanis, George; de Oliveira, Ricardo V. Bof; Hu, Xiao; Yarovsky, Irene; Neto, Antonio H. Castro; Ozyilmaz, Barbaros

2014-01-01

We demonstrate the direct dry transfer of large area Chemical Vapor Deposition graphene to several polymers (low density polyethylene, high density polyethylene, polystyrene, polylactide acid and poly(vinylidenefluoride-co-trifluoroethylene) by means of only moderate heat and pressure, and the later mechanical peeling of the original graphene substrate. Simulations of the graphene-polymer interactions, rheological tests and graphene transfer at various experimental conditions show that contro...

A differential absorption technique to estimate atmospheric total water vapor amounts

Science.gov (United States)

Frouin, Robert; Middleton, Elizabeth

1990-01-01

Vertically integrated water-vapor amounts can be remotely determined by measuring the solar radiance reflected by the earth's surface with satellites or aircraft-based instruments. The technique is based on the method by Fowle (1912, 1913) and utilizes the 0.940-micron water-vapor band to retrieve total-water-vapor data that is independent of surface reflectance properties and other atmospheric constituents. A channel combination is proposed to provide more accurate results, the SE-590 spectrometer is used to verify the data, and the effects of atmospheric photon backscattering is examined. The spectrometer and radiosonde data confirm the accuracy of using a narrow and a wide channel centered on the same wavelength to determine water vapor amounts. The technique is suitable for cloudless conditions and can contribute to atmospheric corrections of land-surface parameters.

Synthesis of electro-active manganese oxide thin films by plasma enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Merritt, Anna R. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Rajagopalan, Ramakrishnan [Department of Engineering, The Pennsylvania State University, Dubois, PA 15801 (United States); Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Carter, Joshua D. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States)

2014-04-01

The good stability, cyclability and high specific capacitance of manganese oxide (MnO{sub x}) has recently promoted a growing interest in utilizing MnO{sub x} in asymmetric supercapacitor electrodes. Several literature reports have indicated that thin film geometries of MnO{sub x} provide specific capacitances that are much higher than bulk MnO{sub x} powders. Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique for the production of metal oxide thin films with high purity and controllable thickness. In this work, MnO{sub x} thin films deposited by PECVD from a methylcyclopentadienyl manganese tricarbonyl precursor are presented and the effect of processing conditions on the quality of MnO{sub x} films is described. The film purity and oxidation state of the MnO{sub x} films were studied by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Preliminary electrochemical testing of MnO{sub x} films deposited on carbon fiber electrodes in aqueous electrolytes indicates that the PECVD synthesized films are electrochemically active. - Highlights: • Plasma enhanced chemical vapor deposition of manganese oxide thin films. • Higher plasma power and chamber pressure increase deposition rate. • Manganese oxide thin films are electrochemically active. • Best electrochemical performance observed for pure film with low stress • Lower capacitance observed at higher scan rates despite thin film geometry.

Upper limits for absorption by water vapor in the near-UV

International Nuclear Information System (INIS)

Wilson, Eoin M.; Wenger, John C.; Venables, Dean S.

2016-01-01

There are few experimental measurements of absorption by water vapor in the near-UV. Here we report the results of spectral measurements of water vapor absorption at ambient temperature and pressure from 325 nm to 420 nm, covering most tropospherically relevant short wavelengths. Spectra were recorded using a broadband optical cavity in the chemically controlled environment of an atmospheric simulation chamber. No absorption attributable to the water monomer (or the dimer) was observed at the 0.5 nm resolution of our system. Our results are consistent with calculated spectra and recent DOAS field observations, but contradict a report of significant water absorption in the near-UV. Based on the detection limit of our instrument, we report upper limits for the water absorption cross section of less than 5×10 −26 cm 2 molecule −1 at our instrument resolution. For a typical, indicative slant column density of 4×10 23 cm 2 , we calculate a maximum optical depth of 0.02 arising from absorption of water vapor in the atmosphere at wavelengths between 340 nm and 420 nm, with slightly higher maximum optical depths below 340 nm. The results of this work, together with recent atmospheric observations and computational results, suggest that water vapor absorption across most of the near-UV is small compared to visible and infrared wavelengths. - Highlights: • The absorption cross section of water vapor was studied from 325 to 420 nm. • The upper limit was 5×10 −26 cm 2 molecule −1 above 340 nm at 0.5 nm resolution. • Our result contradicts a recent report of appreciable absorption by water vapor.

Feasibility of tropospheric water vapor profiling using infrared heterodyne differential absorption lidar

Energy Technology Data Exchange (ETDEWEB)

Grund, C.J.; Hardesty, R.M. [National Oceanic and Atmospheric Administration Environmental Technology Laboratoy, Boulder, CO (United States); Rye, B.J. [Univ. of Colorado, Boulder, CO (United States)

1996-04-01

The development and verification of realistic climate model parameterizations for clouds and net radiation balance and the correction of other site sensor observations for interferences due to the presence of water vapor are critically dependent on water vapor profile measurements. In this study, we develop system performance models and examine the potential of infrared differential absoroption lidar (DIAL) to determine the concentration of water vapor.

Cu-Al alloy formation by thermal annealing of Cu/Al multilayer films deposited by cyclic metal organic chemical vapor deposition

Science.gov (United States)

Moon, Hock Key; Yoon, Jaehong; Kim, Hyungjun; Lee, Nae-Eung

2013-05-01

One of the most important issues in future Cu-based interconnects is to suppress the resistivity increase in the Cu interconnect line while decreasing the line width below 30 nm. For the purpose of mitigating the resistivity increase in the nanoscale Cu line, alloying Cu with traces of other elements is investigated. The formation of a Cu alloy layer using chemical vapor deposition or electroplating has been rarely studied because of the difficulty in forming Cu alloys with elements such as Al. In this work, Cu-Al alloy films were successfully formed after thermal annealing of Cu/Al multilayers deposited by cyclic metal-organic chemical vapor deposition (C-MOCVD). After the C-MOCVD of Cu/Al multilayers without gas phase reaction between the Cu and Al precursors in the reactor, thermal annealing was used to form Cu-Al alloy films with a small Al content fraction. The resistivity of the alloy films was dependent on the Al precursor delivery time and was lower than that of the aluminum-free Cu film. No presence of intermetallic compounds were detected in the alloy films by X-ray diffraction measurements and transmission electron spectroscopy.

Investigating the effects of water vaporization on the production of ...

African Journals Online (AJOL)

The simulations show that water vaporization increases productivity of well by increasing gas saturation and relative permeability near the well walls and improving the mobility of gas; and this effect is stronger in rich gas condensate reservoir than the lean ones. Keywords: Well, Gas, Pressure Drop, Vapor pressure of water ...

Kinetics of chemical vapor deposition of boron on molybdenum

International Nuclear Information System (INIS)

Tanaka, H.; Nakanishi, N.; Kato, E.

1987-01-01

Experimental rate data of chemical vapor deposition of boron by reduction of boron trichloride with hydrogen are analyzed to determine the reaction mechanism. The experiments were conducted at atmospheric pressure. The weight change of the sample was noted by means of a thermobalance. Molybdenum was used as the substrate. It has been found that the outer layer of the deposited film is Mo/sub 2/B/sub 5/ and the inner layer is MoB, and in the stational state of the reaction, the diffusion in the solid state is considered not to be rate controlling. When mass transport limitation was absent, the reaction orders with respect to boron trichloride and hydrogen were one third and one half, respectively. By comparing these orders with those obtained from Langmuir-Hinshelwood type equations, the rate controlling mechanism is identified to be the desorption of hydrogen chloride from the substrate

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

NARCIS (Netherlands)

Ponomarev, M.; Verheijen, M.A.; Keuning, W.; Sanden, van de M.C.M.; Creatore, M.

2012-01-01

Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO:Al layers by focusing on the control

A simple method to deposit palladium doped SnO2 thin films using plasma enhanced chemical vapor deposition technique

International Nuclear Information System (INIS)

Kim, Young Soon; Wahab, Rizwan; Shin, Hyung-Shik; Ansari, S. G.; Ansari, Z. A.

2010-01-01

This work presents a simple method to deposit palladium doped tin oxide (SnO 2 ) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl 4 ) was used as precursor and oxygen (O 2 , 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C 5 HF 6 O 2 ) 2 ) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd 2 Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 mΩ cm as a function of deposition temperature from 400 to 600 deg. C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature.

Properties of a-C:H:O plasma polymer films deposited from acetone vapors

Energy Technology Data Exchange (ETDEWEB)

Drabik, M., E-mail: martin.drabik@gmail.com [Empa, Swiss Federal Laboratories for Materials Science and Technology, Lerchenfeldstrasse 5, 9014 St. Gallen (Switzerland); Celma, C. [Empa, Swiss Federal Laboratories for Materials Science and Technology, Lerchenfeldstrasse 5, 9014 St. Gallen (Switzerland); Kousal, J.; Biederman, H. [Charles University in Prague, Faculty of Mathematics and Physics, Department of Macromolecular Physics, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Hegemann, D. [Empa, Swiss Federal Laboratories for Materials Science and Technology, Lerchenfeldstrasse 5, 9014 St. Gallen (Switzerland)

2014-12-31

To gain insight into the deposition and stability of oxygen-containing plasma polymer films, the properties of amorphous oxygenated hydrocarbon (a-C:H:O) plasma polymer coatings deposited from acetone vapors under various experimental conditions are investigated. Apart from the discharge power, the influence of the reactive carbon dioxide (CO{sub 2}) gas on the structure of the resulting films is studied. It is found by characterization using X-ray Photoelectron Spectroscopy and Fourier-Transform Infrared Spectroscopy that the experimental conditions particularly influence the amount of oxygen in the deposited a-C:H:O plasma polymer films. The O/C elemental ratio increases with increasing amount of CO{sub 2} in the working gas mixture (up to 0.2 for 24 sccm of CO{sub 2} at 30 W) and decreases with increasing RF discharge power (down to 0.17 for 50 W). Furthermore, the nature of bonds between the oxygen and carbon atoms has been examined. Only low amounts of double and triple bonded carbon are observed. This has a particular influence on the aging of the plasma polymer films which is studied both in ambient air and in distilled water for up to 4 months. Overall, stable a-C:H:O plasma polymer films are deposited comprising low amounts (up to about 5%) of ester/carboxyl groups. - Highlights: • Hydrocarbon plasma polymer films with variable oxygen content can be prepared. • Stable oxygenated hydrocarbon plasma polymers contain max 5% of ester/carboxyl groups. • Acetone-derived plasma polymer films can be used as permanent hydrophilic surfaces.

Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Gates, S. M.; Neumayer, D. A.; Sherwood, M. H.; Grill, A.; Wang, X.; Sankarapandian, M.

2007-01-01

The preparation of ultralow dielectric constant porous silicon, carbon, oxygen, hydrogen alloy dielectrics, called 'pSiCOH', using a production 200 mm plasma enhanced chemical vapor deposition tool and a thermal treatment is reported here. The effect of deposition temperature on the pSiCOH film is examined using Fourier transform infrared (FTIR) spectroscopy, dielectric constant (k), and film shrinkage measurements. For all deposition temperatures, carbon in the final porous film is shown to be predominantly Si-CH 3 species, and lower k is shown to correlate with increased concentration of Si-CH 3 . NMR and FTIR spectroscopies clearly detect the loss of a removable, unstable, hydrocarbon (CH x ) phase during the thermal treatment. Also detected are increased cross-linking of the Si-O skeleton, and concentration changes for three distinct structures of carbon. In the as deposited films, deposition temperature also affects the hydrocarbon (CH x ) content and the presence of C=O and C=C functional groups

Influence of boron vapor on transport behavior of deposited CsI during heating test simulating a BWR severe accident condition

Energy Technology Data Exchange (ETDEWEB)

Sato, Isamu, E-mail: sato.isamu@jaea.go.jp; Onishi, Takashi; Tanaka, Kosuke; Iwasaki, Maho; Koyama, Shin-ichi

2015-06-15

In order to evaluate influence of B on the release and transport of Cs and I during severe accidents, basic experiments have been performed on the interaction between deposited Cs/I compounds and vapor/aerosol B compounds. CsI and B{sub 2}O{sub 3} were utilized as a Cs/I compound and a B compound, respectively. Deposited CsI on the thermal gradient tube (TGT) at temperatures ranging from 423 K to 1023 K was reacted with vapor/aerosol B{sub 2}O{sub 3}, and then observed how it changed Cs/I deposition profiles. As a result, vapor/aerosol B{sub 2}O{sub 3} stripped a portion of deposited CsI within a temperature range from 830 K to 920 K to make gaseous CsBO{sub 2} and I{sub 2}. In addition, gaseous I{sub 2} was re-deposited at a temperature range from 530 K to 740 K, while CsBO{sub 2} travelled through the sampling tubes and filters without deposition. It is evident that B enables Cs compounds such as CsBO{sub 2} to transport Cs to the colder regions.

Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiN plasma-enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Carcia, P. F.; McLean, R. S.; Groner, M. D.; Dameron, A. A.; George, S. M.

2009-01-01

Thin films grown by Al 2 O 3 atomic layer deposition (ALD) and SiN plasma-enhanced chemical vapor deposition (PECVD) have been tested as gas diffusion barriers either individually or as bilayers on polymer substrates. Single films of Al 2 O 3 ALD with thicknesses of ≥10 nm had a water vapor transmission rate (WVTR) of ≤5x10 -5 g/m 2 day at 38 deg. C/85% relative humidity (RH), as measured by the Ca test. This WVTR value was limited by H 2 O permeability through the epoxy seal, as determined by the Ca test for the glass lid control. In comparison, SiN PECVD films with a thickness of 100 nm had a WVTR of ∼7x10 -3 g/m 2 day at 38 deg. C/85% RH. Significant improvements resulted when the SiN PECVD film was coated with an Al 2 O 3 ALD film. An Al 2 O 3 ALD film with a thickness of only 5 nm on a SiN PECVD film with a thickness of 100 nm reduced the WVTR from ∼7x10 -3 to ≤5x10 -5 g/m 2 day at 38 deg. C/85% RH. The reduction in the permeability for Al 2 O 3 ALD on the SiN PECVD films was attributed to either Al 2 O 3 ALD sealing defects in the SiN PECVD film or improved nucleation of Al 2 O 3 ALD on SiN.

Water vapor absorption of carbon dioxide laser radiation

Science.gov (United States)

Shumate, M. S.; Menzies, R. T.; Margolis, J. S.; Rosengren, L.-G.

1976-01-01

An optoacoustic detector or spectrophone has been used to perform detailed measurements of the absorptivity of mixtures of water vapor in air. A (C-12) (O-16)2 laser was used as the source, and measurements were made at forty-nine different wavelengths from 9.2 to 10.7 microns. The details of the optoacoustic detector and its calibration are presented, along with a discussion of its performance characteristics. The results of the measurements of water vapor absorption show that the continuum absorption in the wavelength range covered is 5-10% lower than previous measurements.

Two dimensional radial gas flows in atmospheric pressure plasma-enhanced chemical vapor deposition

Science.gov (United States)

Kim, Gwihyun; Park, Seran; Shin, Hyunsu; Song, Seungho; Oh, Hoon-Jung; Ko, Dae Hong; Choi, Jung-Il; Baik, Seung Jae

2017-12-01

Atmospheric pressure (AP) operation of plasma-enhanced chemical vapor deposition (PECVD) is one of promising concepts for high quality and low cost processing. Atmospheric plasma discharge requires narrow gap configuration, which causes an inherent feature of AP PECVD. Two dimensional radial gas flows in AP PECVD induces radial variation of mass-transport and that of substrate temperature. The opposite trend of these variations would be the key consideration in the development of uniform deposition process. Another inherent feature of AP PECVD is confined plasma discharge, from which volume power density concept is derived as a key parameter for the control of deposition rate. We investigated deposition rate as a function of volume power density, gas flux, source gas partial pressure, hydrogen partial pressure, plasma source frequency, and substrate temperature; and derived a design guideline of deposition tool and process development in terms of deposition rate and uniformity.

Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

KAUST Repository

Chen, Wei; Fan, Zhongli; Zeng, Gaofeng; Lai, Zhiping

2013-01-01

High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found

Laser chemical vapor deposition of millimeter scale three-dimensional shapes

Science.gov (United States)

Shaarawi, Mohammed Saad

2001-07-01

Laser chemical vapor deposition (LCVD) has been successfully developed as a technique to synthesize millimeter-scale components directly from the gas phase. Material deposition occurs when heat generated by the interaction of a laser beam with a substrate thermally decomposes the gas precursor. Selective illumination or scanning the laser beam over portions of a substrate forms the single thin layer of material that is the building block of this process. Sequential scanning of the laser in a pre-defined pattern on the substrate and subsequent deposit causes the layers to accumulate forming the three-dimensional shape. The primary challenge encountered in LCVD shape forming is the synthesis of uniform layers. Three deposition techniques are studied to address this problem. The most successful technique, Active Surface Deposition, is based on the premise that the most uniform deposits are created by measuring the deposition surface topology and actively varying the deposition rate in response to features at the deposition surface. Defects observed in the other techniques were significantly reduced or completely eliminated using Active Surface Deposition. The second technique, Constant Temperature Deposition, maintains deposit uniformity through the use of closed-loop modulation of the laser power to sustain a constant surface temperature during deposition. The technique was successful in depositing high quality graphite tubes >2 mm tall from an acetylene precursor and partially successful in depositing SiC + C composite tubes from tetramethylsilane (TMS). The final technique, Constant Power Deposition, is based on the premise that maintaining a uniform power output throughout deposition would result in the formation of uniform layers. Constant Power Deposition failed to form coherent shapes. Additionally, LCVD is studied using a combination of analytic and numerical models to gain insight into the deposition process. Thermodynamic modeling is used to predict the

Investigation of tungsten mass transfer in rarefied air oxygen and water vapors

International Nuclear Information System (INIS)

Evsikov, A.S.; Makeev, A.A.; Lyubimova, L.L.; Sinyavskij, V.V.

1989-01-01

The results of experimental investigations of oxygen and water vapor effect on the rate of tungsten evaporation are presented. Methods for carrying out an experiment are presented. The experiments are carried out at the 2600 degC tungsten wire temperature and the pressure of oxygen and water vapors (2x10 -3 -5) Pa. Registration of final products of mass transfer is carried out by the DRON-2.0 diffractometer using a detachable substrate. Empirical dependence taking into account oxygen and water vapor effect on the rate of tungsten evaporation is suggested. It is marked that air oxygen and water vapor increase evaporation rate uniformly the difference is observed only in final products of interaction

Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Karamat, S., E-mail: shumailakaramat@gmail.com [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey); COMSATS Institute of Information Technology, Islamabad 54000 (Pakistan); Sonuşen, S. [Sabancı Üniversitesi (SUNUM), İstanbul 34956 (Turkey); Çelik, Ü. [Nanomagnetics Instruments, Ankara (Turkey); Uysallı, Y. [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey); Oral, A., E-mail: orahmet@metu.edu.tr [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey)

2016-04-15

Graphical abstract: - Highlights: • Graphene layers were grown on Pt and Cu foil via ambient pressure chemical vapor deposition method and for the delicate removal of graphene from metal catalysts, electrolysis method was used by using different alkaline (sodium hydroxide, potassium hydroxide, lithium hydroxide and barium hydroxide). • The delamination speed of PMMA/graphene stack was higher during the KOH and LiOH electrolysis as compare to NaOH and Ba(OH){sub 2}. Ba(OH){sub 2} is not advisable because of the residues left on the graphene surface which would further trapped in between graphene and SiO{sub 2}/Si surface after transfer. The average peeling time in case of Pt electrode is ∼6 min for KOH and LiOH and ∼15 min for NaOH and Ba(OH){sub 2}. • Electrolysis method also works for the Cu catalyst. The peeling of graphene was faster in the case of Cu foil due to small size of bubbles which moves faster between the stack and the electrode surface. The average peeling time was ∼3–5 min. • XPS analysis clearly showed that the Pt substrates can be re-used again. Graphene layer was transferred to SiO{sub 2}/Si substrates and to the flexible substrate by using the same peeling method. - Abstract: In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH){sub 2} for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and Li

Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

International Nuclear Information System (INIS)

Karamat, S.; Sonuşen, S.; Çelik, Ü.; Uysallı, Y.; Oral, A.

2016-01-01

Graphical abstract: - Highlights: • Graphene layers were grown on Pt and Cu foil via ambient pressure chemical vapor deposition method and for the delicate removal of graphene from metal catalysts, electrolysis method was used by using different alkaline (sodium hydroxide, potassium hydroxide, lithium hydroxide and barium hydroxide). • The delamination speed of PMMA/graphene stack was higher during the KOH and LiOH electrolysis as compare to NaOH and Ba(OH)_2. Ba(OH)_2 is not advisable because of the residues left on the graphene surface which would further trapped in between graphene and SiO_2/Si surface after transfer. The average peeling time in case of Pt electrode is ∼6 min for KOH and LiOH and ∼15 min for NaOH and Ba(OH)_2. • Electrolysis method also works for the Cu catalyst. The peeling of graphene was faster in the case of Cu foil due to small size of bubbles which moves faster between the stack and the electrode surface. The average peeling time was ∼3–5 min. • XPS analysis clearly showed that the Pt substrates can be re-used again. Graphene layer was transferred to SiO_2/Si substrates and to the flexible substrate by using the same peeling method. - Abstract: In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH)_2 for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and LiOH was ∼6 min and for NaOH and

Determination of water vapor and aerosol densities in the tropospheric atmosphere from nitrogen and water vapor raman signals

CERN Document Server

Kim, D H; Lee, J M; Yeon, K H; Choi, S C

1998-01-01

A Raman lidar system has been developed for the measurement of the water-vapor mixing ratio and the aerosol backscatter and extinction coefficients. To suppress the elastic scattering from the XeCl excimer laser, an acetone edge filter and narrow-band interference filters are used. By using independently calculated backscatter and extinction coefficients, we calculate the lidar ratios (extinction coefficient divided by the backscatter coefficient). The obtained ratios between 30 and 50 sr explain the special characteristics of the aerosol existing in the atmosphere. These ratios are also used as important parameters in the lidar inversion program. We have also obtained the water-vapor mixing ratio and find that big differences exist between the ratios inside the boundary layer and those of other regions.

Deposition of MgB2 Thin Films on Alumina-Buffered Si Substrates by using Hybrid Physical-Chemical Vapor Deposition Method

International Nuclear Information System (INIS)

Lee, T. G.; Park, S. W.; Seong, W. K.; Huh, J. Y.; Jung, S. G.; Kang, W. N.; Lee, B. K.; An, K. S.

2008-01-01

[ MgB 2 ] thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures 500 - 600 degrees C and under the reactor pressures of 25 - 50 degrees C. There are some interfacial reactions in the as-grown films with impurities of mostly Mg 2 Si, MgAl 2 O 4 , and other phases. The T c 's of MgB 2 films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly Mg 2 Si impurity in HPCVD process is discussed, considering the diffusion and reaction of Mg vapor with silicon substrates.

Formation of graphene on BN substrate by vapor deposition method and size effects on its structure

Science.gov (United States)

Giang, Nguyen Hoang; Hanh, Tran Thi Thu; Ngoc, Le Nhu; Nga, Nguyen To; Van Hoang, Vo

2018-04-01

We report MD simulation of the growth of graphene by the vapor deposition on a two-dimensional hBN substrate. The systems (containing carbon vapor and hBN substrate) are relaxed at high temperature (1500 K), and then it is cooled down to room one (300 K). Carbon atoms interact with the substrate via the Lennard-Jones potential while the interaction between carbon atoms is computed via the Tersoff potential. Depending on the size of the model, different crystalline honeycomb structures have been found. Structural properties of the graphene obtained at 300 K are studied by analyzing radial distribution functions (RDFs), coordination numbers, ring statistics, interatomic distances, bond-angle distributions and 2D visualization of atomic configurations. We find that the models containing various numbers of atoms have a honeycomb structure. Besides, differences in structural properties of graphene formed by the vapor deposition on the substrate and free standing one are found. Moreover, the size effect on the structure is significant.

A Plant-Based Proxy for the Oxygen Isotope Ratio of Atmospheric Water Vapor

Science.gov (United States)

Helliker, B.

2007-12-01

Atmospheric water vapor is a major component of the global hydrological cycle, but the isotopic balance of vapor is largely unknown. It is shown here that the oxygen isotope ratio of leaf water in the epiphytic Crassulacean acid metabolism (CAM) plant Tillandsia usneoides (Spanish Moss) is controlled by the oxygen isotope ratio of atmospheric water vapor in both field and lab studies. Assuming that the leaf-water isotopic signature (and hence the atmospheric water vapor signature) is recorded in plant organic material, the atmospheric water vapor oxygen isotope ratios for Miami, Florida (USA) were reconstructed for several years from 1878 to 2005 using contemporary and herbarium specimens. T. usneoides ranges from Virginia, USA southwards through the tropics to Argentina, and the CAM epiphytic lifeform is widespread in other species. Therefore, epiphytes may be used to reconstruct the isotope ratio of atmospheric water for spatial scales that span over 60° of latitude and temporal scales that cover the last century of global temperature increase.

Simulation of stratospheric water vapor trends: impact on stratospheric ozone chemistry

Directory of Open Access Journals (Sweden)

A. Stenke

2005-01-01

Full Text Available A transient model simulation of the 40-year time period 1960 to 1999 with the coupled climate-chemistry model (CCM ECHAM4.L39(DLR/CHEM shows a stratospheric water vapor increase over the last two decades of 0.7 ppmv and, additionally, a short-term increase after major volcanic eruptions. Furthermore, a long-term decrease in global total ozone as well as a short-term ozone decline in the tropics after volcanic eruptions are modeled. In order to understand the resulting effects of the water vapor changes on lower stratospheric ozone chemistry, different perturbation simulations were performed with the CCM ECHAM4.L39(DLR/CHEM feeding the water vapor perturbations only to the chemistry part. Two different long-term perturbations of lower stratospheric water vapor, +1 ppmv and +5 ppmv, and a short-term perturbation of +2 ppmv with an e-folding time of two months were applied. An additional stratospheric water vapor amount of 1 ppmv results in a 5–10% OH increase in the tropical lower stratosphere between 100 and 30 hPa. As a direct consequence of the OH increase the ozone destruction by the HOx cycle becomes 6.4% more effective. Coupling processes between the HOx-family and the NOx/ClOx-family also affect the ozone destruction by other catalytic reaction cycles. The NOx cycle becomes 1.6% less effective, whereas the effectiveness of the ClOx cycle is again slightly enhanced. A long-term water vapor increase does not only affect gas-phase chemistry, but also heterogeneous ozone chemistry in polar regions. The model results indicate an enhanced heterogeneous ozone depletion during antarctic spring due to a longer PSC existence period. In contrast, PSC formation in the northern hemisphere polar vortex and therefore heterogeneous ozone depletion during arctic spring are not affected by the water vapor increase, because of the less PSC activity. Finally, this study shows that 10% of the global total ozone decline in the transient model run

Trends of total water vapor column above the Arctic from satellites observations

Science.gov (United States)

Alraddawi, Dunya; Sarkissian, Alain; Keckhut, Philippe; Bock, Olivier; Claud, Chantal; Irbah, Abdenour

2016-04-01

Atmospheric water vapor (H2O) is the most important natural (as opposed to man-made) greenhouse gas, accounting for about two-thirds of the natural greenhouse effect. Despite this importance, its role in climate and its reaction to climate change are still difficult to assess. Many details of the hydrological cycle are poorly understood, such as the process of cloud formation and the transport and release of latent heat contained in the water vapor. In contrast to other important greenhouse gases like carbon dioxide (CO2) and methane, water vapor has a much higher temporal and spatial variability. Total precipitable water (TPW) or the total column of water vapor (TCWV) is the amount of liquid water that would result if all the water vapor in the atmospheric column of unit area were condensed. TCWV distribution contains valuable information on the vigor of the hydrological processes and moisture transport in the atmosphere. Measurement of TPW can be obtained based on atmospheric water vapor absorption or emission of radiation in the spectral range from UV to MW. TRENDS were found over the terrestrial Arctic by means of TCWV retrievals (using Moderate Resolution Imaging Spectro-radiometer (MODIS) near-infrared (2001-2015) records). More detailed approach was made for comparisons with ground based instruments over Sodankyla - Finland (TCWV from: SCIAMACHY 2003-2011, GOME-2A 2007-2011, SAOZ 2003-2011, GPS 2003-2011, MODIS 2003-2011)

Water vapor measurements in the 0.94 micron absorption band - Calibration, measurements and data applications

Science.gov (United States)

Reagan, J. A.; Thome, K.; Herman, B.; Gall, R.

1987-01-01

This paper describes methods and presents results for sensing the columnar content of atmospheric water vapor via differential solar transmission measurements in and adjacent to the 0.94-micron water-vapor absorption band. Calibration and measurement techniques are presented for obtaining the water vapor transmission from the radiometer measurements. Models are also presented for retrieving the columnar water vapor amount from the estimated transmission. Example retrievals are presented for radiometer measurements made during the 1986 Arizona Monsoon Season to track temporal variations in columnar water vapor amount.

Material gap membrane distillation: A new design for water vapor flux enhancement

KAUST Repository

Francis, Lijo

2013-08-19

A new module design for membrane distillation, namely material gap membrane distillation (MGMD), for seawater desalination has been proposed and successfully tested. It has been observed that employing appropriate materials between the membrane and the condensation plate in an air gap membrane distillation (AGMD) module enhanced the water vapor flux significantly. An increase in the water vapor flux of about 200-800% was observed by filling the gap with sand and DI water at various feed water temperatures. However, insulating materials such as polypropylene and polyurethane have no effect on the water vapor flux. The influence of material thickness and characteristics has also been investigated in this study. An increase in the water gap width from 9. mm to 13. mm increases the water vapor flux. An investigation on an AGMD and MGMD performance comparison, carried out using two different commercial membranes provided by different manufacturers, is also reported in this paper. © 2013 Elsevier B.V.

Millimeter-wave Radiometer for High Sensitivity Water Vapor Profiling in Arid Regions

Energy Technology Data Exchange (ETDEWEB)

Pazmany, Andrew

2006-11-09

Abstract - ProSensing Inc. has developed a G-band (183 GHz) water Vapor Radiometer (GVR) for long-term, unattended measurements of low concentrations of atmospheric water vapor and liquid water. Precipitable water vapor and liquid water path are estimated from zenith brightness temperatures measured from four double-sideband receiver channels, centered at 183.31 1, 3 and 7, and 14 GHz. A prototype ground-based version of the instrument was deployed at the DOE ARM program?s North Slope of Alaska site near Barrow AK in April 2005, where it collected data continuously for one year. A compact, airborne version of this instrument, packaged to operate from a standard 2-D PMS probe canister, has been tested on the ground and is scheduled for test flights in the summer of 2006. This paper presents design details, laboratory test results and examples of retrieved precipitable water vapor and liquid water path from measured brightness temperature data.

HTO deposition by vapor exchange between atmosphere and soil

International Nuclear Information System (INIS)

Bunnenberg, C.

1989-01-01

HTO deposition to soils occurs by vapor exchange between atmosphere and soil-air, when the concentration gradient is directed downwards, and it is principally independent from simultaneous transport of H 2 O. In relatively dry top soil, which is frequently the case, as it tries to attain equilibrium with the air humidity, HTO diffuses into deeper soil driven by the same mechanisms that caused the deposition process. The resulting HTO profile is depending on the atmospheric supply and the soil physical conditions, and it is the source for further tritium pathways, namely root uptake by plants and reemission from soil back into the ground-level air. Simulation experiments with soil columns exposed to HTO labeled atmospheres have proved the theoretical expectation that under certain boundary conditions the HTO profile can be described by an error function. The key parameter is the effective diffusion coefficient, which in turn is a function of the sorption characteristics of the particular soil. (orig.) [de

Passivated graphene transistors fabricated on a millimeter-sized single-crystal graphene film prepared with chemical vapor deposition

International Nuclear Information System (INIS)

Lin, Meng-Yu; Lee, Si-Chen; Lin, Shih-Yen; Wang, Cheng-Hung; Chang, Shu-Wei

2015-01-01

In this work, we first investigate the effects of partial pressures and flow rates of precursors on the single-crystal graphene growth using chemical vapor depositions on copper foils. These factors are shown to be critical to the growth rate, seeding density and size of graphene single crystals. The prepared graphene films in millimeter sizes are then bubbling transferred to silicon-dioxide/silicon substrates for high-mobility graphene transistor fabrications. After high-temperature annealing and hexamethyldisilazane passivation, the water attachment is removed from the graphene channel. The elimination of uncontrolled doping and enhancement of carrier mobility accompanied by these procedures indicate that they are promising for fabrications of graphene transistors. (paper)

Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

DEFF Research Database (Denmark)

Sun, Jie; Lindvall, Niclas; Cole, Matthew T.

2012-01-01

Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes...

Initiated chemical vapor deposition of thermoresponsive poly(N-vinylcaprolactam) thin films for cell sheet engineering.

Science.gov (United States)

Lee, Bora; Jiao, Alex; Yu, Seungjung; You, Jae Bem; Kim, Deok-Ho; Im, Sung Gap

2013-08-01

Poly(N-vinylcaprolactam) (PNVCL) is a thermoresponsive polymer known to be nontoxic, water soluble and biocompatible. Here, PNVCL homopolymer was successfully synthesized for the first time by use of a one-step vapor-phase process, termed initiated chemical vapor deposition (iCVD). Fourier transform infrared spectroscopy results showed that radical polymerization took place from N-vinylcaprolactam monomers without damaging the functional caprolactam ring. A sharp lower critical solution temperature transition was observed at 31°C from the iCVD poly(N-vinylcaprolactam) (PNVCL) film. The thermoresponsive PNVCL surface exhibited a hydrophilic/hydrophobic alteration with external temperature change, which enabled the thermally modulated attachment and detachment of cells. The conformal coverage of PNVCL film on various substrates with complex topography, including fabrics and nanopatterns, was successfully demonstrated, which can further be utilized to fabricate cell sheets with aligned cell morphology. The advantage of this system is that cells cultured on such thermoresponsive surfaces could be recovered as an intact cell sheet by simply lowering the temperature, eliminating the need for conventional enzymatic treatments. Copyright © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Ground-Based Global Positioning System (GPS) Meteorology Integrated Precipitable Water Vapor (IPW)

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — The Ground-Based Global Positioning System (GPS) Meteorology Integrated Precipitable Water Vapor (IPW) data set measures atmospheric water vapor using ground-based...

Modeling of the Enceladus water vapor jets for interpreting UVIS star and solar occultation observations

Science.gov (United States)

Portyankina, Ganna; Esposito, Larry W.; Aye, Klaus-Michael; Hansen, Candice J.

2015-11-01

One of the most spectacular discoveries of the Cassini mission is jets emitting from the southern pole of Saturn’s moon Enceladus. The composition of the jets is water vapor and salty ice grains with traces of organic compounds. Jets, merging into a wide plume at a distance, are observed by multiple instruments on Cassini. Recent observations of the visible dust plume by the Cassini Imaging Science Subsystem (ISS) identified as many as 98 jet sources located along “tiger stripes” [Porco et al. 2014]. There is a recent controversy on the question if some of these jets are “optical illusion” caused by geometrical overlap of continuous source eruptions along the “tiger stripes” in the field of view of ISS [Spitale et al. 2015]. The Cassini’s Ultraviolet Imaging Spectrograph (UVIS) observed occultations of several stars and the Sun by the water vapor plume of Enceladus. During the solar occultation separate collimated gas jets were detected inside the background plume [Hansen et al., 2006 and 2011]. These observations directly provide data about water vapor column densities along the line of sight of the UVIS instrument and could help distinguish between the presence of only localized or also continuous sources. We use Monte Carlo simulations and Direct Simulation Monte Carlo (DSMC) to model the plume of Enceladus with multiple (or continuous) jet sources. The models account for molecular collisions, gravitational and Coriolis forces. The models result in the 3-D distribution of water vapor density and surface deposition patterns. Comparison between the simulation results and column densities derived from UVIS observations provide constraints on the physical characteristics of the plume and jets. The specific geometry of the UVIS observations helps to estimate the production rates and velocity distribution of the water molecules emitted by the individual jets.Hansen, C. J. et al., Science 311:1422-1425 (2006); Hansen, C. J. et al, GRL 38:L11202 (2011

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency.

Science.gov (United States)

Wen, Xixing; Chen, Chao; Lu, Shuaicheng; Li, Kanghua; Kondrotas, Rokas; Zhao, Yang; Chen, Wenhao; Gao, Liang; Wang, Chong; Zhang, Jun; Niu, Guangda; Tang, Jiang

2018-06-05

Antimony selenide is an emerging promising thin film photovoltaic material thanks to its binary composition, suitable bandgap, high absorption coefficient, inert grain boundaries and earth-abundant constituents. However, current devices produced from rapid thermal evaporation strategy suffer from low-quality film and unsatisfactory performance. Herein, we develop a vapor transport deposition technique to fabricate antimony selenide films, a technique that enables continuous and low-cost manufacturing of cadmium telluride solar cells. We improve the crystallinity of antimony selenide films and then successfully produce superstrate cadmium sulfide/antimony selenide solar cells with a certified power conversion efficiency of 7.6%, a net 2% improvement over previous 5.6% record of the same device configuration. We analyze the deep defects in antimony selenide solar cells, and find that the density of the dominant deep defects is reduced by one order of magnitude using vapor transport deposition process.

Modeling and measurement of boiling point elevation during water vaporization from aqueous urea for SCR applications

International Nuclear Information System (INIS)

Dan, Ho Jin; Lee, Joon Sik

2016-01-01

Understanding of water vaporization is the first step to anticipate the conversion process of urea into ammonia in the exhaust stream. As aqueous urea is a mixture and the urea in the mixture acts as a non-volatile solute, its colligative properties should be considered during water vaporization. The elevation of boiling point for urea water solution is measured with respect to urea mole fraction. With the boiling-point elevation relation, a model for water vaporization is proposed underlining the correction of the heat of vaporization of water in the urea water mixture due to the enthalpy of urea dissolution in water. The model is verified by the experiments of water vaporization as well. Finally, the water vaporization model is applied to the water vaporization of aqueous urea droplets. It is shown that urea decomposition can begin before water evaporation finishes due to the boiling-point elevation

Modeling and measurement of boiling point elevation during water vaporization from aqueous urea for SCR applications

Energy Technology Data Exchange (ETDEWEB)

Dan, Ho Jin; Lee, Joon Sik [Seoul National University, Seoul (Korea, Republic of)

2016-03-15

Understanding of water vaporization is the first step to anticipate the conversion process of urea into ammonia in the exhaust stream. As aqueous urea is a mixture and the urea in the mixture acts as a non-volatile solute, its colligative properties should be considered during water vaporization. The elevation of boiling point for urea water solution is measured with respect to urea mole fraction. With the boiling-point elevation relation, a model for water vaporization is proposed underlining the correction of the heat of vaporization of water in the urea water mixture due to the enthalpy of urea dissolution in water. The model is verified by the experiments of water vaporization as well. Finally, the water vaporization model is applied to the water vaporization of aqueous urea droplets. It is shown that urea decomposition can begin before water evaporation finishes due to the boiling-point elevation.

A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

Science.gov (United States)

Gokoglu, S. A.; Kuczmarski, M. A.

1993-01-01

Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

The Intrinsic Variability in the Water Vapor Saturation Ratio due to Turbulence

Science.gov (United States)

Anderson, J. C.; Cantrell, W. H.; Chandrakar, K. K.; Kostinski, A. B.; Niedermeier, D.; Shaw, R. A.

2017-12-01

In the atmosphere, the concentration of water vapor plays an important role in Earth's weather and climate. The mean concentration of water vapor is key to its efficiency as a greenhouse gas; the fluctuations about the mean are important for heat fluxes near the surface of earth. In boundary layer clouds, fluctuations in the water vapor concentration are linked to turbulence. Conditions representative of boundary layer clouds are simulated in Michigan Tech's multiphase, turbulent reaction chamber, the ∏ chamber, where the boundary conditions are controlled and repeatable. Measurements for temperature and water vapor concentration were recorded under forced Rayleigh-Bénard convection. As expected, the distributions for temperature and water vapor concentration broaden as the turbulence becomes more vigorous. From these two measurements the saturation ratio can be calculated. The fluctuations in the water vapor concentration are more important to the variability in the saturation ratio than fluctuations in temperature. In a cloud, these fluctuations in the saturation ratio can result in some cloud droplets experiencing much higher supersaturations. Those "lucky" droplets grow by condensation at a faster rate than other cloud droplets. The difference in the droplet growth rate could contribute to a broadened droplet distribution, which leads to the onset of collision-coalescence. With more intense turbulence these effect will become more pronounced as the fluctuations about the mean saturation ratio become more pronounced.

Linkages Among Water Vapor Flows, Food Production, and Terrestrial Ecosystem Services

Directory of Open Access Journals (Sweden)

Johan Rockström

1999-12-01

Full Text Available Global freshwater assessments have not addressed the linkages among water vapor flows, agricultural food production, and terrestrial ecosystem services. We perform the first bottom-up estimate of continental water vapor flows, subdivided into the major terrestrial biomes, and arrive at a total continental water vapor flow of 70,000 km3/yr (ranging from 56,000 to 84,000 km3/yr. Of this flow, 90% is attributed to forests, including woodlands (40,000 km3/yr, wetlands (1400 km3/yr, grasslands (15,100 km3/yr, and croplands (6800 km3/yr. These terrestrial biomes sustain society with essential welfare-supporting ecosystem services, including food production. By analyzing the freshwater requirements of an increasing demand for food in the year 2025, we discover a critical trade-off between flows of water vapor for food production and for other welfare-supporting ecosystem services. To reduce the risk of unintentional welfare losses, this trade-off must become embedded in intentional ecohydrological landscape management.

Optimization of GPS water vapor tomography technique with radiosonde and COSMIC historical data

Directory of Open Access Journals (Sweden)

S. Ye

2016-09-01

Full Text Available The near-real-time high spatial resolution of atmospheric water vapor distribution is vital in numerical weather prediction. GPS tomography technique has been proved effectively for three-dimensional water vapor reconstruction. In this study, the tomography processing is optimized in a few aspects by the aid of radiosonde and COSMIC historical data. Firstly, regional tropospheric zenith hydrostatic delay (ZHD models are improved and thus the zenith wet delay (ZWD can be obtained at a higher accuracy. Secondly, the regional conversion factor of converting the ZWD to the precipitable water vapor (PWV is refined. Next, we develop a new method for dividing the tomography grid with an uneven voxel height and a varied water vapor layer top. Finally, we propose a Gaussian exponential vertical interpolation method which can better reflect the vertical variation characteristic of water vapor. GPS datasets collected in Hong Kong in February 2014 are employed to evaluate the optimized tomographic method by contrast with the conventional method. The radiosonde-derived and COSMIC-derived water vapor densities are utilized as references to evaluate the tomographic results. Using radiosonde products as references, the test results obtained from our optimized method indicate that the water vapor density accuracy is improved by 15 and 12 % compared to those derived from the conventional method below the height of 3.75 km and above the height of 3.75 km, respectively. Using the COSMIC products as references, the results indicate that the water vapor density accuracy is improved by 15 and 19 % below 3.75 km and above 3.75 km, respectively.

Physically vapor deposited coatings on tools: performance and wear phenomena

International Nuclear Information System (INIS)

Koenig, W.; Fritsch, R.; Kammermeier, D.

1991-01-01

Coatings produced by physical vapor deposition (PVD) enhance the performance of tools for a broad variety of production processes. In addition to TiN, nowadays (Ti,Al)N and Ti(C,N) coated tools are available. This gives the opportunity to compare the performance of different coatings under identical machining conditions and to evaluate causes and phenomena of wear. TiN, (Ti,Al)N and Ti(C,N) coatings on high speed steel (HSS) show different performances in milling and turning of heat treated steel. The thermal and frictional properties of the coating materials affect the structure, the thickness and the flow of the chips, the contact area on the rake face and the tool life. Model tests show the influence of internal cooling and the thermal conductivity of coated HSS inserts. TiN and (Ti,Zr)N PVD coatings on cemented carbides were examined in interrupted turning and in milling of heat treated steel. Experimental results show a significant influence of typical time-temperature cycles of PVD and chemical vapor deposition (CVD) coating processes on the physical data and on the performance of the substrates. PVD coatings increase tool life, especially towards lower cutting speeds into ranges which cannot be applied with CVD coatings. The reason for this is the superior toughness of the PVD coated carbide. The combination of tough, micrograin carbide and PVD coating even enables broaching of case hardened sliding gears at a cutting speed of 66 m min -1 . (orig.)

Fabrication of 100 A class, 1 m long coated conductor tapes by metal organic chemical vapor deposition and pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Selvamanickam, V.; Lee, H.G.; Li, Y.; Xiong, X.; Qiao, Y.; Reeves, J.; Xie, Y.; Knoll, A.; Lenseth, K

2003-10-15

SuperPower has been scaling up YBa{sub 2}Cu{sub 3}O{sub x}-based second-generation superconducting tapes by techniques such as pulsed laser deposition (PLD) using industrial laser and metal organic chemical vapor deposition (MOCVD). Both techniques offer advantage of high deposition rates, which is important for high throughput. Using highly-polished substrates produced in a reel-to-reel polishing facility and buffer layers deposited in a pilot ion beam assisted deposition facility, meter-long second-generation high temperature superconductor tapes have been produced. 100 A class, meter-long coated conductor tapes have been reproducibly demonstrated in this work by both MOCVD and PLD. The best results to date are 148 A over 1.06 m by MOCVD and 135 A over 1.1 m by PLD using industrial laser.

The Oxidation Rate of SiC in High Pressure Water Vapor Environments

Science.gov (United States)

Opila, Elizabeth J.; Robinson, R. Craig

1999-01-01

CVD SiC and sintered alpha-SiC samples were exposed at 1316 C in a high pressure burner rig at total pressures of 5.7, 15, and 25 atm for times up to 100h. Variations in sample emittance for the first nine hours of exposure were used to determine the thickness of the silica scale as a function of time. After accounting for volatility of silica in water vapor, the parabolic rate constants for Sic in water vapor pressures of 0.7, 1.8 and 3.1 atm were determined. The dependence of the parabolic rate constant on the water vapor pressure yielded a power law exponent of one. Silica growth on Sic is therefore limited by transport of molecular water vapor through the silica scale.

Molecular Orientation in Two Component Vapor-Deposited Glasses: Effect of Substrate Temperature and Molecular Shape

Science.gov (United States)

Powell, Charles; Jiang, Jing; Walters, Diane; Ediger, Mark

Vapor-deposited glasses are widely investigated for use in organic electronics including the emitting layers of OLED devices. These materials, while macroscopically homogenous, have anisotropic packing and molecular orientation. By controlling this orientation, outcoupling efficiency can be increased by aligning the transition dipole moment of the light-emitting molecules parallel to the substrate. Light-emitting molecules are typically dispersed in a host matrix, as such, it is imperative to understand molecular orientation in two-component systems. In this study we examine two-component vapor-deposited films and the orientations of the constituent molecules using spectroscopic ellipsometry, UV-vis and IR spectroscopy. The role of temperature, composition and molecular shape as it effects molecular orientation is examined for mixtures of DSA-Ph in Alq3 and in TPD. Deposition temperature relative to the glass transition temperature of the two-component mixture is the primary controlling factor for molecular orientation. In mixtures of DSA-Ph in Alq3, the linear DSA-Ph has a horizontal orientation at low temperatures and slight vertical orientation maximized at 0.96Tg,mixture, analogous to one-component films.

Airborne differential absorption lidar system for water vapor investigations

Science.gov (United States)

Browell, E. V.; Carter, A. F.; Wilkerson, T. D.

1981-01-01

Range-resolved water vapor measurements using the differential-absorption lidar (DIAL) technique is described in detail. The system uses two independently tunable optically pumped lasers operating in the near infrared with laser pulses of less than 100 microseconds separation, to minimize concentration errors caused by atmospheric scattering. Water vapor concentration profiles are calculated for each measurement by a minicomputer, in real time. The work is needed in the study of atmospheric motion and thermodynamics as well as in forestry and agriculture problems.

Application of an automatic cloud tracking technique to Meteosat water vapor and infrared observations

Science.gov (United States)

Endlich, R. M.; Wolf, D. E.

1980-01-01

The automatic cloud tracking system was applied to METEOSAT 6.7 micrometers water vapor measurements to learn whether the system can track the motions of water vapor patterns. Data for the midlatitudes, subtropics, and tropics were selected from a sequence of METEOSAT pictures for 25 April 1978. Trackable features in the water vapor patterns were identified using a clustering technique and the features were tracked by two different methods. In flat (low contrast) water vapor fields, the automatic motion computations were not reliable, but in areas where the water vapor fields contained small scale structure (such as in the vicinity of active weather phenomena) the computations were successful. Cloud motions were computed using METEOSAT infrared observations (including tropical convective systems and midlatitude jet stream cirrus).

The development of chemically vapor deposited mullite coatings for the corrosion protection of SiC

Energy Technology Data Exchange (ETDEWEB)

Auger, M.; Hou, P.; Sengupta, A.; Basu, S.; Sarin, V. [Boston Univ., MA (United States)

1998-05-01

Crystalline mullite coatings have been chemically vapor deposited onto SiC substrates to enhance the corrosion and oxidation resistance of the substrate. Current research has been divided into three distinct areas: (1) Development of the deposition processing conditions for increased control over coating`s growth rate, microstructure, and morphology; (2) Analysis of the coating`s crystal structure and stability; (3) The corrosion resistance of the CVD mullite coating on SiC.

The Corrosion Protection of Metals by Ion Vapor Deposited Aluminum

Science.gov (United States)

Danford, M. D.

1993-01-01

A study of the corrosion protection of substrate metals by ion vapor deposited aluminum (IVD Al) coats has been carried out. Corrosion protection by both anodized and unanodized IVD Al coats has been investigated. Base metals included in the study were 2219-T87 Al, 7075-T6 Al, Titanium-6 Al-4 Vanadium (Ti-6Al-4V), 4130 steel, D6AC steel, and 4340 steel. Results reveal that the anodized IVD Al coats provide excellent corrosion protection, but good protection is also achieved by IVD Al coats that have not been anodized.

Limitations of patterning thin films by shadow mask high vacuum chemical vapor deposition

International Nuclear Information System (INIS)

Reinke, Michael; Kuzminykh, Yury; Hoffmann, Patrik

2014-01-01

A key factor in engineering integrated devices such as electro-optic switches or waveguides is the patterning of high quality crystalline thin films into specific geometries. In this contribution high vacuum chemical vapor deposition (HV-CVD) was employed to grow titanium dioxide (TiO 2 ) patterns onto silicon. The directed nature of precursor transport – which originates from the high vacuum environment during the process – allows shading certain regions on the substrate by shadow masks and thus depositing patterned thin films. While the use of such masks is an emerging field in stencil or shadow mask lithography, their use for structuring thin films within HV-CVD has not been reported so far. The advantage of the employed technique is the precise control of lateral spacing and of the distance between shading mask and substrate surface which is achieved by manufacturing them directly on the substrate. As precursor transport takes place in the molecular flow regime, the precursor impinging rates (and therefore the film growth rates) on the surface can be simulated as function of the reactor and shading mask geometry using a comparatively simple mathematical model. In the current contribution such a mathematical model, which predicts impinging rates on plain or shadow mask structured substrates, is presented. Its validity is confirmed by TiO 2 -deposition on plain silicon substrates (450 °C) using titanium tetra isopropoxide as precursor. Limitations of the patterning process are investigated by the deposition of TiO 2 on structured substrates and subsequent shadow mask lift-off. The geometry of the deposits is according to the mathematical model. Shading effects due to the growing film enables to fabricate deposits with predetermined variations in topography and non-flat top deposits which are complicated to obtain by classical clean room processes. As a result of the enhanced residual pressure of decomposition products and titanium precursors and the

Phase Equilibrium of TiO2 Nanocrystals in Flame-Assisted Chemical Vapor Deposition.

Science.gov (United States)

Liu, Changran; Camacho, Joaquin; Wang, Hai

2018-01-19

Nano-scale titanium oxide (TiO 2 ) is a material useful for a wide range of applications. In a previous study, we showed that TiO 2 nanoparticles of both rutile and anatase crystal phases could be synthesized over the size range of 5 to 20 nm in flame-assisted chemical vapor deposition. Rutile was unexpectedly dominant in oxygen-lean synthesis conditions, whereas anatase is the preferred phase in oxygen-rich gases. The observation is in contrast to the 14 nm rutile-anatase crossover size derived from the existing crystal-phase equilibrium model. In the present work, we made additional measurements over a wider range of synthesis conditions; the results confirm the earlier observations. We propose an improved model for the surface energy that considers the role of oxygen desorption at high temperatures. The model successfully explains the observations made in the current and previous work. The current results provide a useful path to designing flame-assisted chemical vapor deposition of TiO 2 nanocrystals with controllable crystal phases. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD).

Science.gov (United States)

Böke, Frederik; Giner, Ignacio; Keller, Adrian; Grundmeier, Guido; Fischer, Horst

2016-07-20

Densely sintered aluminum oxide (α-Al2O3) is chemically and biologically inert. To improve the interaction with biomolecules and cells, its surface has to be modified prior to use in biomedical applications. In this study, we compared two deposition techniques for adhesion promoting SiOx films to facilitate the coupling of stable organosilane monolayers on monolithic α-alumina; physical vapor deposition (PVD) by thermal evaporation and plasma enhanced chemical vapor deposition (PE-CVD). We also investigated the influence of etching on the formation of silanol surface groups using hydrogen peroxide and sulfuric acid solutions. The film characteristics, that is, surface morphology and surface chemistry, as well as the film stability and its adhesion properties under accelerated aging conditions were characterized by means of X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), inductively coupled plasma-optical emission spectroscopy (ICP-OES), and tensile strength tests. Differences in surface functionalization were investigated via two model organosilanes as well as the cell-cytotoxicity and viability on murine fibroblasts and human mesenchymal stromal cells (hMSC). We found that both SiOx interfaces did not affect the cell viability of both cell types. No significant differences between both films with regard to their interfacial tensile strength were detected, although failure mode analyses revealed a higher interfacial stability of the PE-CVD films compared to the PVD films. Twenty-eight day exposure to simulated body fluid (SBF) at 37 °C revealed a partial delamination of the thermally deposited PVD films whereas the PE-CVD films stayed largely intact. SiOx layers deposited by both PVD and PE-CVD may thus serve as viable adhesion-promoters for subsequent organosilane coupling agent binding to α-alumina. However, PE-CVD appears to be favorable for long-term direct film exposure to aqueous

Tritiated water vapor in the surface air at Tokyo

International Nuclear Information System (INIS)

Inoue, Hisayuki; Katsuragi, Yukio; Shigehara, Koji

1984-01-01

Tritium concentration in water vapor in the air near the surface and in the precipitation at Tokyo was measured during the period from 9 August to 20 November in 1974. From August to the middle of October, tritium mixing ratios in the surface air had relatively higher values except those in air masses which were associated with a typhoon. The mixing ratios of tritium in the air decreased abruptly at the middle of October, which indicates the decrease of tritium influx from aloft. These data exhibit the salient feature that variations in tritium concentration in TR are linear to the reciprocal of the content of water vapor during each period. Tritium concentrations in vapor and rain water collected simultaneously show nearly equal values. One of the reasons for the good correlation of tritium concentration between falling drops and ambient air is considered to be the result of the rapid isotopic exchange. (author)

Handbook of chemical vapor deposition principles, technology and applications

CERN Document Server

Pierson, Hugh O

1999-01-01

Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest

Mars atmospheric water vapor abundance: 1996-1997

Science.gov (United States)

Sprague, A. L.; Hunten, D. M.; Doose, L. R.; Hill, R. E.

2003-05-01

Measurements of martian atmospheric water vapor made throughout Ls = 18.0°-146.4° (October 3, 1996-July 12, 1997) show changes in Mars humidity on hourly, daily, and seasonal time scales. Because our observing program during the 1996-1997 Mars apparition did not include concomitant measurement of nearby CO 2 bands, high northern latitude data were corrected for dust and aerosol extinction assuming an optical depth of 0.8, consistent with ground-based and HST imaging of northern dust storms. All other measurements with airmass greater than 3.5 were corrected using a total optical depth of 0.5. Three dominant results from this data set are as follows: (1) pre- and post-opposition measurements made with the slit crossing many hours of local time on Mars' Earth-facing disk show a distinct diurnal pattern with highest abundances around and slightly after noon with low abundances in the late afternoon, (2) measurements of water vapor over the Mars Pathfinder landing site (Carl Sagan Memorial Station) on July 12, 1997, found 21 ppt μm in the spatial sector centered near 19° latitude, 36° longitude while abundances around the site varied from as low as 6 to as high as 28 ppt μm, and (3) water vapor abundance is patchy on hourly and daily time scales but follows the usual seasonal trends.

Thermal barrier coatings of rare earth materials deposited by electron beam-physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Xu Zhenhua [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); He Limin, E-mail: he_limin@yahoo.co [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Chen Xiaolong; Zhao Yu [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Cao Xueqiang, E-mail: xcao@ciac.jl.c [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

2010-10-15

Thermal barrier coatings (TBCs) have very important applications in gas turbines for higher thermal efficiency and protection of components at high temperature. TBCs of rare earth materials such as lanthanum zirconate (La{sub 2}Zr{sub 2}O{sub 7}, LZ), lanthanum cerate (La{sub 2}Ce{sub 2}O{sub 7}, LC), lanthanum cerium zirconate (La{sub 2}(Zr{sub 0.7}Ce{sub 0.3}){sub 2}O{sub 7}, LZ7C3) were prepared by electron beam-physical vapor deposition (EB-PVD). The composition, crystal structure, cross-sectional morphology and cyclic oxidation behavior of these coatings were studied. These coatings have partially deviated from their original compositions due to the different evaporation rates of oxides, and the deviation could be reduced by properly controlling the deposition condition. A double ceramic layer-thermal barrier coatings (DCL-TBCs) of LZ7C3 and LC could also be deposited with a single LZ7C3 ingot by properly controlling the deposition energy. LaAlO{sub 3} is formed due to the chemical reaction between LC and Al{sub 2}O{sub 3} in the thermally grown oxide (TGO) layer. The failure of DCL-TBCs is a result of the sintering-induced of LZ7C3 coating and the chemical incompatibility of LC and TGO. Since no single material that has been studied so far satisfies all the requirements for high temperature applications, DCL-TBCs are an important development direction of TBCs.

Industrialization of Hot Wire Chemical Vapor Deposition for thin film applications

International Nuclear Information System (INIS)

Schropp, R.E.I.

2015-01-01

The consequences of implementing a Hot Wire Chemical Vapor Deposition (HWCVD) chamber into an existing in-line or roll-to-roll reactor are described. The hardware and operation of the HWCVD production reactor is compared to that of existing roll-to-roll reactors based on Plasma Enhanced Chemical Vapor Deposition. The most important consequences are the technical consequences and the economic consequences, which are both discussed. The technical consequences are adaptations needed to the hardware and to the processing sequences due to the different interaction of the HWCVD process with the substrate and already deposited layers. The economic consequences are the reduced investments in radio frequency (RF) supplies and RF components. This is partially offset by investments that have to be made in higher capacity pumping systems. The most mature applications of HWCVD are moisture barrier coatings for thin film flexible devices such as Organic Light Emitting Diodes and Organic Photovoltaics, and passivation layers for multicrystalline Si solar cells, high mobility field effect transistors, and silicon heterojunction cells (also known as heterojunction cells with intrinsic thin film layers). Another example is the use of Si in thin film photovoltaics. The cost perspective per unit of thin film photovoltaic product using HWCVD is estimated at 0.07 €/Wp for the Si thin film component. - Highlights: • Review of consequences of implementing Hot Wire CVD into a manufacturing plant • Aspects of scaling up to large area and continuous manufacturing are discussed • Economic advantage of introducing a HWCVD process in a production system is estimated • Using HWCVD, the cost for the Si layers in photovoltaic products is 0.08 €/Wp.

Chemical vapor deposition of refractory ternary nitrides for advanced diffusion barriers

Energy Technology Data Exchange (ETDEWEB)

Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth; Smith, Paul Martin

1998-09-22

Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.

Industrialization of Hot Wire Chemical Vapor Deposition for thin film applications

Energy Technology Data Exchange (ETDEWEB)

Schropp, R.E.I., E-mail: r.e.i.schropp@tue.nl

2015-11-30

The consequences of implementing a Hot Wire Chemical Vapor Deposition (HWCVD) chamber into an existing in-line or roll-to-roll reactor are described. The hardware and operation of the HWCVD production reactor is compared to that of existing roll-to-roll reactors based on Plasma Enhanced Chemical Vapor Deposition. The most important consequences are the technical consequences and the economic consequences, which are both discussed. The technical consequences are adaptations needed to the hardware and to the processing sequences due to the different interaction of the HWCVD process with the substrate and already deposited layers. The economic consequences are the reduced investments in radio frequency (RF) supplies and RF components. This is partially offset by investments that have to be made in higher capacity pumping systems. The most mature applications of HWCVD are moisture barrier coatings for thin film flexible devices such as Organic Light Emitting Diodes and Organic Photovoltaics, and passivation layers for multicrystalline Si solar cells, high mobility field effect transistors, and silicon heterojunction cells (also known as heterojunction cells with intrinsic thin film layers). Another example is the use of Si in thin film photovoltaics. The cost perspective per unit of thin film photovoltaic product using HWCVD is estimated at 0.07 €/Wp for the Si thin film component. - Highlights: • Review of consequences of implementing Hot Wire CVD into a manufacturing plant • Aspects of scaling up to large area and continuous manufacturing are discussed • Economic advantage of introducing a HWCVD process in a production system is estimated • Using HWCVD, the cost for the Si layers in photovoltaic products is 0.08 €/Wp.

Space-Time Variations in Water Vapor as Observed by the UARS Microwave Limb Sounder

Science.gov (United States)

Elson, Lee S.; Read, William G.; Waters, Joe W.; Mote, Philip W.; Kinnersley, Jonathan S.; Harwood, Robert S.

1996-01-01

Water vapor in the upper troposphere has a significant impact on the climate system. Difficulties in making accurate global measurements have led to uncertainty in understanding water vapor's coupling to the hydrologic cycle in the lower troposphere and its role in radiative energy balance. The Microwave Limb Sounder (MLS) on the Upper Atmosphere Research Satellite is able to retrieve water vapor concentration in the upper troposphere with good sensitivity and nearly global coverage. An analysis of these preliminary retrievals based on 3 years of observations shows the water vapor distribution to be similar to that measured by other techniques and to model results. The primary MLS water vapor measurements were made in the stratosphere, where this species acts as a conserved tracer under certain conditions. As is the case for the upper troposphere, most of the stratospheric discussion focuses on the time evolution of the zonal mean and zonally varying water vapor. Stratospheric results span a 19-month period and tropospheric results a 36-month period, both beginning in October of 1991. Comparisons with stratospheric model calculations show general agreement, with some differences in the amplitude and phase of long-term variations. At certain times and places, the evolution of water vapor distributions in the lower stratosphere suggests the presence of meridional transport.

The measurement of water vapor permeability of glove materials using dilute tritiated water

International Nuclear Information System (INIS)

Doughty, D.H.

1982-01-01

As fusion technology progresses, there will be an increasing need to handle tritium and tritiated compounds. Protective clothing, especially drybox gloves, must be an effective barrier to minimize worker exposure. The water vapor permeability of glove materials and finished glove constructions is a crucial property of drybox gloves and is not sufficiently well characterized. We have built an apparatus that measures water vapor permeability of elastomers using dilute tritiated water. The technique is more sensitive than other methods currently available and allows us to make measurements on materials and under conditions previously inaccessible. In particular, we present results on laminated drybox gloves for which data is not currently available. (orig.)

Quality and Control of Water Vapor Winds

Science.gov (United States)

Jedlovec, Gary J.; Atkinson, Robert J.

1996-01-01

Water vapor imagery from the geostationary satellites such as GOES, Meteosat, and GMS provides synoptic views of dynamical events on a continual basis. Because the imagery represents a non-linear combination of mid- and upper-tropospheric thermodynamic parameters (three-dimensional variations in temperature and humidity), video loops of these image products provide enlightening views of regional flow fields, the movement of tropical and extratropical storm systems, the transfer of moisture between hemispheres and from the tropics to the mid- latitudes, and the dominance of high pressure systems over particular regions of the Earth. Despite the obvious larger scale features, the water vapor imagery contains significant image variability down to the single 8 km GOES pixel. These features can be quantitatively identified and tracked from one time to the next using various image processing techniques. Merrill et al. (1991), Hayden and Schmidt (1992), and Laurent (1993) have documented the operational procedures and capabilities of NOAA and ESOC to produce cloud and water vapor winds. These techniques employ standard correlation and template matching approaches to wind tracking and use qualitative and quantitative procedures to eliminate bad wind vectors from the wind data set. Techniques have also been developed to improve the quality of the operational winds though robust editing procedures (Hayden and Veldon 1991). These quality and control approaches have limitations, are often subjective, and constrain wind variability to be consistent with model derived wind fields. This paper describes research focused on the refinement of objective quality and control parameters for water vapor wind vector data sets. New quality and control measures are developed and employed to provide a more robust wind data set for climate analysis, data assimilation studies, as well as operational weather forecasting. The parameters are applicable to cloud-tracked winds as well with minor

On the Growth and Microstructure of Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Handuja Sangeeta

2010-01-01

Full Text Available Abstract Carbon nanotubes (CNTs were deposited on various substrates namely untreated silicon and quartz, Fe-deposited silicon and quartz, HF-treated silicon, silicon nitride-deposited silicon, copper foil, and stainless steel mesh using thermal chemical vapor deposition technique. The optimum parameters for the growth and the microstructure of the synthesized CNTs on these substrates are described. The results show that the growth of CNTs is strongly influenced by the substrate used. Vertically aligned multi-walled CNTs were found on quartz, Fe-deposited silicon and quartz, untreated silicon, and on silicon nitride-deposited silicon substrates. On the other hand, spaghetti-type growth was observed on stainless steel mesh, and no CNT growth was observed on HF-treated silicon and copper. Silicon nitride-deposited silicon substrate proved to be a promising substrate for long vertically aligned CNTs of length 110–130 μm. We present a possible growth mechanism for vertically aligned and spaghetti-type growth of CNTs based on these results.

Carbonized tantalum catalysts for catalytic chemical vapor deposition of silicon films

Energy Technology Data Exchange (ETDEWEB)

Cheng Shimin [State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Dalian National Laboratory for Clean Energy, Dalian 116023 (China); Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Gao Huiping; Ren Tong; Ying Pinliang [State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Dalian National Laboratory for Clean Energy, Dalian 116023 (China); Li Can, E-mail: canli@dicp.ac.cn [State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Dalian National Laboratory for Clean Energy, Dalian 116023 (China)

2012-06-01

Catalytic chemical vapor deposition (Cat-CVD) has been demonstrated as a promising way to prepare device-quality silicon films. However, catalyst ageing due to Si contamination is an urgency to be solved for the practical application of the technique. In this study, the effect of carbonization of tantalum catalyst on its structure and performance was investigated. The carbonized Ta catalyst has a TaC surface layer which is preserved over the temperature range between 1450 and 1750 Degree-Sign C and no Si contamination occurs on the catalyst after long-term use. Si film prepared using the carbonized Ta catalyst has a similar crystal structure to that prepared by uncarbonized Ta catalyst. Formation of the TaC surface layer can alleviate the ageing problem of the catalyst, which shows great potential as a stable catalyst for Cat-CVD of Si films. - Highlights: Black-Right-Pointing-Pointer Si films prepared by catalytic chemical vapor deposition. Black-Right-Pointing-Pointer Carbonized Ta with a TaC surface layer used as catalyst. Black-Right-Pointing-Pointer TaC surface structure preserved after long-term use in a wide temperature range. Black-Right-Pointing-Pointer Help to solve the ageing problem of metal catalysts. Black-Right-Pointing-Pointer Si film obtained has a similar crystal structure to that prepared by Ta catalyst.

Water vapor retrieval from near-IR measurements of polarized scanning atmospheric corrector

Science.gov (United States)

Qie, Lili; Ning, Yuanming; Zhang, Yang; Chen, Xingfeng; Ma, Yan; Li, Zhengqiang; Cui, Wenyu

2018-02-01

Water vapor and aerosol are two key atmospheric factors effecting the remote sensing image quality. As water vapor is responsible for most of the solar radiation absorption occurring in the cloudless atmosphere, accurate measurement of water content is important to not only atmospheric correction of remote sensing images, but also many other applications such as the study of energy balance and global climate change, land surface temperature retrieval in thermal remote sensing. A multi-spectral, single-angular, polarized radiometer called Polarized Scanning Atmospheric Corrector (PSAC) were developed in China, which are designed to mount on the same satellite platform with the principle payload and provide essential parameters for principle payload image atmospheric correction. PSAC detect water vapor content via measuring atmosphere reflectance at water vapor absorbing channels (i.e. 0.91 μm) and nearby atmospheric window channel (i.e. 0.865μm). A near-IR channel ratio method was implemented to retrieve column water vapor (CWV) amount from PSAC measurements. Field experiments were performed at Yantai, in Shandong province of China, PSAC aircraft observations were acquired. The comparison between PSAC retrievals and ground-based Sun-sky radiometer measurements of CWV during the experimental flights illustrates that this method retrieves CWV with relative deviations ranging from 4% 13%. This method retrieve CWV more accurate over land than over ocean, as the water reflectance is low.

Coating of carbon short fibers with thin ceramic layers by chemical vapor deposition

International Nuclear Information System (INIS)

Hackl, Gerrit; Gerhard, Helmut; Popovska, Nadejda

2006-01-01

Carbon short fiber bundles with a length of 6 mm were uniformly coated using specially designed, continuous chemical vapor deposition (CVD) equipment. Thin layers of titanium nitride, silicon nitride (SiC) and pyrolytic carbon (pyC) were deposited onto several kilograms of short fibers in this large scale CVD reactor. Thermo-gravimetric analyses and scanning electron microscopy investigations revealed layer thicknesses between 20 and 100 nm on the fibers. Raman spectra of pyC coated fibers show a change of structural order depending on the CVD process parameters. For the fibers coated with SiC, Raman investigations showed a deposition of amorphous SiC. The coated carbon short fibers will be applied as reinforcing material in composites with ceramic and metallic matrices

An economic analysis of the deposition of electrochromic WO3 via sputtering or plasma enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Garg, D.; Henderson, P.B.; Hollingsworth, R.E.; Jensen, D.G.

2005-01-01

The costs of manufacturing electrochromic WO 3 thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO 3 for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF 6 , sputtering cost is dominated by labor and depreciation

Novel Prospects for Plasma Spray-Physical Vapor Deposition of Columnar Thermal Barrier Coatings

Science.gov (United States)

Anwaar, Aleem; Wei, Lianglinag; Guo, Qian; Zhang, Baopeng; Guo, Hongbo

2017-12-01

Plasma spray-physical vapor deposition (PS-PVD) is an emerging coating technique that can produce columnar thermal barrier coatings from vapor phase. Feedstock treatment at the start of its trajectory in the plasma torch nozzle is important for such vapor-phase deposition. This study describes the effects of the plasma composition (Ar/He) on the plasma characteristics, plasma-particle interaction, and particle dynamics at different points spatially distributed inside the plasma torch nozzle. The results of calculations show that increasing the fraction of argon in the plasma gas mixture enhances the momentum and heat flow between the plasma and injected feedstock. For the plasma gas combination of 45Ar/45He, the total enthalpy transferred to a representative powder particle inside the plasma torch nozzle is highest ( 9828 kJ/kg). Moreover, due to the properties of the plasma, the contribution of the cylindrical throat, i.e., from the feed injection point (FIP) to the start of divergence (SOD), to the total transferred energy is 69%. The carrier gas flow for different plasma gas mixtures was also investigated by optical emission spectroscopy (OES) measurements of zirconium emissions. Yttria-stabilized zirconia (YSZ) coating microstructures were produced when using selected plasma gas compositions and corresponding carrier gas flows; structural morphologies were found to be in good agreement with OES and theoretical predictions. Quasicolumnar microstructure was obtained with porosity of 15% when applying the plasma composition of 45Ar/45He.

Controllable growth of nanostructured carbon from coal tar pitch by chemical vapor deposition

International Nuclear Information System (INIS)

Liu Xuguang; Yang Yongzhen; Ji Weiyun; Liu Hongyan; Zhang Chunyi; Xu Bingshe

2007-01-01

The direct synthesis of vapor grown carbon fibers with different diameters was achieved by the pyrolysis of coal tar pitch by chemical vapor deposition. The products were characterized by field-emission scanning electron microscopy, high resolution transmission electron microscopy, X-ray diffraction and Raman spectroscopy. The experimental results demonstrated that ferrocene content, reaction temperature and Ar flow rate strongly influenced the yield and nature of nanostructured carbon materials, pure carbon microbeads, with diameter distribution ranging from 450 to 650 nm, were also obtained in the absence of catalyst, uniform and straight carbon nanofibers with the outer diameter of about 115 nm were obtained and curl and thick carbon fibers with narrow diameter distribution of 300-350 nm were produced

The Annual Cycle of Water Vapor on Mars as Observed by the Thermal Emission Spectrometer

Science.gov (United States)

Smith, Michael D.; Vondrak, Richard R. (Technical Monitor)

2001-01-01

Spectra taken by the Mars Global Surveyor Thermal Emission Spectrometer (TES) have been used to monitor the latitude, longitude, and seasonal dependence of water vapor for over one full Martian year (March 1999-March 2001). A maximum in water vapor abundance is observed at high latitudes during mid-summer in both hemispheres, reaching a maximum value of approximately 100 pr-micrometer in the north and approximately 50 pr-micrometer in the south. Low water vapor abundance (water vapor. The latitudinal and seasonal dependence of the decay of the northern summer water vapor maximum implies cross-equatorial transport of water to the southern hemisphere, while there is little or no corresponding transport during the decay of the southern hemisphere summer maximum. The latitude-longitude dependence of annually-averaged water vapor (corrected for topography) has a significant positive correlation with albedo and significant negative correlations with thermal inertia and surface pressure. Comparison of TES results with those retrieved from the Viking Orbiter Mars Atmospheric Water Detectors (MAWD) experiments shows some similar features, but also many significant differences. The southern hemisphere maximum observed by TES was not observed by MAWD and the large latitudinal gradient in annually-averaged water vapor observed by MAWD does not appear in the TES results.

The self-similar turbulent flow of low-pressure water vapor

Science.gov (United States)

Konyukhov, V. K.; Stepanov, E. V.; Borisov, S. K.

2018-05-01

We studied turbulent flows of water vapor in a pipe connecting two closed vessels of equal volume. The vessel that served as a source of water vapor was filled with adsorbent in the form of corundum ceramic balls. These ceramic balls were used to obtain specific conditions to lower the vapor pressure in the source vessel that had been observed earlier. A second vessel, which served as a receiver, was empty of either air or vapor before each vapor sampling. The rate of the pressure increase in the receiver vessel was measured in a series of six samplings performed with high precision. The pressure reduction rate in the source vessel was found to be three times lower than the pressure growth rate in the receiver vessel. We found that the pressure growth rates in all of the adjacent pairs of samples could be arranged in a combination that appeared to be identical for all pairs, and this revealed the existence of a rather interesting and peculiar self-similarity law for the sampling processes under consideration.

Advancements in oxygen generation and humidity control by water vapor electrolysis

Science.gov (United States)

Heppner, D. B.; Sudar, M.; Lee, M. C.

1988-01-01

Regenerative processes for the revitalization of manned spacecraft atmospheres or other manned habitats are essential for realization of long-term space missions. These processes include oxygen generation through water electrolysis. One promising technique of water electrolysis is the direct conversion of the water vapor contained in the cabin air to oxygen. This technique is the subject of the present program on water vapor electrolysis development. The objectives were to incorporate technology improvements developed under other similar electrochemical programs and add new ones; design and fabricate a mutli-cell electrochemical module and a testing facility; and demonstrate through testing the improvements. Each aspect of the water vapor electrolysis cell was reviewed. The materials of construction and sizing of each element were investigated analytically and sometime experimentally. In addition, operational considerations such as temperature control in response to inlet conditions were investigated. Three specific quantitative goals were established.

2017 Report for New LANL Physical Vapor Deposition Capability

Energy Technology Data Exchange (ETDEWEB)

Roman, Audrey Rae [Los Alamos National Laboratory; Zhao, Xinxin [Los Alamos National Laboratory; Bond, Evelyn M. [Los Alamos National Laboratory; Gooden, Matthew Edgell [Los Alamos National Laboratory; Rundberg, Robert S. [Los Alamos National Laboratory; Bredeweg, Todd Allen [Los Alamos National Laboratory

2017-10-03

There is an urgent need at LANL to achieve uniform, thin film actinide targets that are essential for nuclear physics experiments. The target preparation work is currently performed externally by Professor Walter Loveland at Oregon State University, who has made various evaporated actinide targets such as Th and U for use on several nuclear physics measurements at LANSCE. We are developing a vapor deposition capability, with the goal of evaporating Th and U in the Actinide Research Facility (ARF) at TA-48. In the future we plan to expand this work to evaporating transuranic elements, such as Pu. The ARF is the optimal location for evaporating actinides because this lab is specifically dedicated to actinide research. There are numerous instruments in the ARF that can be used to provide detailed characterization of the evaporated thin films such as: Table top Scanning Electron Microscope, In-situ X-Ray Diffraction, and 3D Raman spectroscopy. These techniques have the ability to determine the uniformity, surface characterization, and composition of the deposits.

Metalorganic chemical vapor deposition of ZnO:N using NO as dopant

International Nuclear Information System (INIS)

Dangbegnon, J.K.; Talla, K.; Roro, K.T.; Botha, J.R.

2009-01-01

Highly c-axis orientated ZnO was grown by metal organic chemical vapor deposition (MOCVD) using NO as both oxidant and nitrogen dopant source. The properties of the deposited material are investigated by X-ray diffraction to study the crystalline quality of the thin films. Photoluminescence measurements are used to determine the optical properties of the material as a function of VI/II ratio and post growth-annealing temperature. Two transitions appear at 3.228 and 3.156 eV and are interpreted as involving active nitrogen acceptors. An increase in the NO flow increases the concentration of nitrogen in the films, which are activated by subsequent annealing at 600 deg. C in an oxygen ambient.

Metalorganic chemical vapor deposition of ZnO:N using NO as dopant

Energy Technology Data Exchange (ETDEWEB)

Dangbegnon, J.K., E-mail: JulienKouadio.Dangbegnon@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Talla, K.; Roro, K.T.; Botha, J.R. [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

2009-12-01

Highly c-axis orientated ZnO was grown by metal organic chemical vapor deposition (MOCVD) using NO as both oxidant and nitrogen dopant source. The properties of the deposited material are investigated by X-ray diffraction to study the crystalline quality of the thin films. Photoluminescence measurements are used to determine the optical properties of the material as a function of VI/II ratio and post growth-annealing temperature. Two transitions appear at 3.228 and 3.156 eV and are interpreted as involving active nitrogen acceptors. An increase in the NO flow increases the concentration of nitrogen in the films, which are activated by subsequent annealing at 600 deg. C in an oxygen ambient.

DMSP SSMT/2 - Atmospheric Water Vapor Profiler

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — The SSM/T-2 sensor is a five channel, total power microwave radiometer with three channels situated symmetrically about the 183.31 GHz water vapor resonance line and...

Characterization of a Compact Water Vapor Radiometer

Science.gov (United States)

Gill, Ajay; Selina, Rob

2018-01-01

We report on laboratory test results of the Compact Water Vapor Radiometer (CWVR) prototype for the Karl G. Jansky Very Large Array (VLA), a five-channel design centered around the 22 GHz water vapor line. Fluctuations in perceptible water vapor cause fluctuations in atmospheric brightness emission, which are assumed to be proportional to phase fluctuations of the astronomical signal seen by an antenna. The design is intended to support empirical radiometric phase corrections for each baseline in the array.The dynamic range, channel isolation, and gain stability of the device were characterized. The device has a useful dynamic range of order 18 dB after calibration, and the CWVR channel isolation requirement of test, the diode detectors were operated in the square-law region, and a K-band noise diode was used as the broadband input power source to the CWVR over a period of 64 hours. Results indicate that the fluctuations in output counts are negatively correlated to the CWVR enclosure ambient temperature, with a change of ~ 405 counts per 1° C change in temperature.A correction for the CWVR ambient temperature makes a considerable improvement in stability for τ > 102.6 sec. With temperature corrections, the single channel and channel difference gain stability per channel is test results indicate that the CWVR meets required specifications for dynamic range, channel isolation, and gain stability in order to proceed with testing on a pair of VLA antennas.

Metalorganic chemical vapor deposition and characterization of ZnO materials

Science.gov (United States)

Sun, Shangzu; Tompa, Gary S.; Hoerman, Brent; Look, David C.; Claflin, Bruce B.; Rice, Catherine E.; Masaun, Puneet

2006-04-01

Zinc oxide is attracting growing interest for potential applications in electronics, optoelectronics, photonics, and chemical and biochemical sensing, among other applications. We report herein our efforts in the growth and characterization of p- and n-type ZnO materials by metalorganic chemical vapor deposition (MOCVD), focusing on recent nitrogen-doped films grown using diethyl zinc as the zinc precursor and nitric oxide (NO) as the dopant. Characterization results, including resistivity, Hall measurements, photoluminescence, and SIMS, are reported and discussed. Electrical behavior was observed to be dependent on illumination, atmosphere, and heat treatment, especially for p-type material.

Role of hydrogen in Sb film deposition and characterization of Sb and GexSby films deposited by cyclic plasma enhanced chemical vapor deposition using metal-organic precursors

International Nuclear Information System (INIS)

Kim, Hyung Keun; Jung, Jin Hwan; Choi, Doo Jin

2012-01-01

To meet increasing demands for chemical vapor deposition methods for high performance phase-change memory, cyclic plasma enhanced chemical vapor deposition of Sb and Ge x Sb y phase-change films and characterization of their properties were performed. Two cycle sequences were designed to investigate the role of hydrogen gas as a reduction gas during Sb film deposition. Hydrogen gas was not introduced into the reaction chamber during the purge step in cycle sequence A and was introduced during the purge step for cycle sequence B. The role of hydrogen gas was investigated by comparing the results obtained from these two cycle sequences and was concluded to exert an effect by a combination of precursor decomposition, surface maintenance as a hydrogen termination agent, and surface etching. These roles of hydrogen gas are discussed through consideration of changes in deposition rates, the oxygen concentration on the surface of the Sb film, and observations of film surface morphology. Based on these results, Ge x Sb y phase-change films were deposited with an adequate flow rate of hydrogen gas. The Ge and Sb composition of the film was controlled with the designed cycle sequences. A strong oxygen affinity for Ge was observed during the X-ray photoelectron spectroscopy analysis of Sb 3d, Sb 4d, and Ge 3d orbitals. Based on the XPS results, the ratios of Ge to Sb were calculated to be Ge 0.32 Sb 0.68 , Ge 0.38 Sb 0.62 , Ge 0.44 Sb 0.56 , Ge 0.51 Sb 0.49 and Ge 0.67 Sb 0.33 for the G1S7, G1S3, G1S2, G1S1, and G2S1 cycles, respectively. Crystal structures of Sb, Ge, and the GeSb metastable phase were observed with various Ge x Sb y film compositions. Sb crystallinity decreased with respect to Ge crystallinity by increasing the Ge fraction. A current–voltage curve was introduced, and an electro-switching phenomenon was clearly generated at a typical voltage, V th . V th values increased in conjunction with an increased proportion of Ge. The Sb crystallinity decrease and V

Field campaign LINEX 96/1 - possibilities of water vapor observation in the free atmosphere

Energy Technology Data Exchange (ETDEWEB)

Steinhagen, H.; Dier, H.; Engelbart, D.; Goersdorf, U.; Lehmann, V.; Leiterer, U.; Neisser, J. [Deutscher Wetterdienst, Lindenberg (Germany). Meteorologisches Observatorium; Bakan, S. [Hamburg Univ. (Germany). Meteorologisches Inst.; Boesenberg, J.; Jansen, F.; Wulfmeyer, V. [Max-Planck-Institut fuer Meteorologie, Hamburg (Germany); Fischer, J. [Freie Univ. Berlin (Germany). Inst. fuer Weltraumwissenschaften; Gendt, G. [GeoForschungsZentrum Potsdam (Germany); Gueldner, J. [Deutscher Wetterdienst, Potsdam (Germany). Meteorologisches Observatorium

1998-12-01

LINEX 96/1 was a field experiment to assess information content, accuracy, and availability for different remote sensing techniques measuring water vapor. An important goal of LINEX 96/1 was the test of a new differential absorption lidar (DIAL) developed by the MPI fuer meteorologie Hamburg. Comparisons of DIAL with rawinsonde and tethersonde measurements showed an excellent accuracy of the DIAL method in the determination of water vapor with high vertical and temporal resolution. The operation of the microwave radiometer WVR-1100 showed a high availability of water vapor and liquid water column content measurements except during rain. Microwave radiometers are reliable systems to measure the precipitable water vapor and liquid water content under unattended operational conditions with high accuracy and temporal resolution. Measurements of the water vapor column content by ground-based GPS receivers proved highly reliable. Comparisons with corresponding values of the microwave radiometer showed a bias less than 0.6 mm and a standard deviation less than 0.9 mm. The main problem of an operational use of this new information is that the evaluated data are not available in real-time because, at present, the data have to be postprocessed in a ground control center. During LINEX 96/1, possibilities for estimation of water vapor column content from sun and star photometer measurements were also demonstrated. The comparison of the precipitable water vapor content measurements of sun and star photometers, microwave radiometer, and rawinsondes RS 80 showed a good agreement. Unfortunately, the use of optical methods like sun and star photometers is restricted by cloudy conditions. 28 refs.

Optimization of band-pass filtering parameters of a Raman lidar detecting atmospheric water vapor

International Nuclear Information System (INIS)

Cao, Kai-Fa; Hu, Shun-Xing; Wang, Ying-jian

2012-01-01

It is very important for daytime Raman lidar measurement of water vapor to determine the parameters of a band-pass filter, which are pertinent to the lidar signal to noise ratio (SNR). The simulated annealing (SA) algorithm method has an advantage in finding the extremum of a certain cost function. In this paper, the Raman spectrum of water vapor is simulated and then a first realization of a simulated annealing algorithm in the optimization of a band-pass filter of a Raman lidar system designed to detect daytime water vapor is presented. The simulated results indicate that the narrow band-pass filter has higher SNR than the wide filter does but there would be an increase in the temperature sensitivity of a narrowband Raman water vapor lidar in the upper troposphere. The numerical simulation indicates that the magnitude of the temperature dependent effect can reach 3.5% or more for narrow band-pass Raman water vapor measurements so it is necessary to consider a new water vapor Raman lidar equation that permits the temperature sensitivity of these equations to be confined to a single term. (paper)

Water evaporation in silica colloidal deposits.

Science.gov (United States)

Peixinho, Jorge; Lefèvre, Grégory; Coudert, François-Xavier; Hurisse, Olivier

2013-10-15

The results of an experimental study on the evaporation and boiling of water confined in the pores of deposits made of mono-dispersed silica colloidal micro-spheres are reported. The deposits are studied using scanning electron microscopy, adsorption of nitrogen, and adsorption of water through attenuated total reflection-infrared spectroscopy. The evaporation is characterized using differential scanning calorimetry and thermal gravimetric analysis. Optical microscopy is used to observe the patterns on the deposits after evaporation. When heating at a constant rate and above boiling temperature, the release of water out of the deposits is a two step process. The first step is due to the evaporation and boiling of the surrounding and bulk water and the second is due to the desorption of water from the pores. Additional experiments on the evaporation of water from membranes having cylindrical pores and of heptane from silica deposits suggest that the second step is due to the morphology of the deposits. Copyright © 2013 Elsevier Inc. All rights reserved.

Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

KAUST Repository

Cheng, Yingchun

2013-01-01

Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.

Application of Chlorine-Assisted Chemical Vapor Deposition of Diamond at Low Temperatures

Science.gov (United States)

Pan, Chenyu; Altemir, David A.; Margrave, John L.; Hauge, Robert H.

1994-01-01

Low temperature deposition of diamond has been achieved by a chlorine-assisted diamond chemical vapor deposition (CA-CVD) process. This method begins with the thermal dissociation of molecular chlorine into atomic chlorine in a resistively heated graphite furnace at temperatures between 1300 and 1500 deg. C. The atomic chlorine, upon mixing, subsequently reacts with molecular hydrogen and hydrocarbons. The rapid exchange reactions between the atomic chlorine, molecular hydrogen, and hydrocarbons give rise to the atomic hydrogen and carbon precursors required for diamond deposition. Homoepitaxial diamond growth on diamond substrates has been studied over the substrate temperature range of 100-950 C. It was found that the diamond growth rates are approximately 0.2 microns/hr in the temperature range between 102 and 300 C and that the growth rates do not decrease significantly with a decrease in substrate temperature. This is unique because the traditional diamond deposition using H2/CH4 systems usually disappears at substrate temperatures below approx. 500 deg. C. This opens up a possible route to the deposition of diamond on low-melting point materials such as aluminum and its alloys.

Improved waste water vapor compression distillation technology. [for Spacelab

Science.gov (United States)

Johnson, K. L.; Nuccio, P. P.; Reveley, W. F.

1977-01-01

The vapor compression distillation process is a method of recovering potable water from crewman urine in a manned spacecraft or space station. A description is presented of the research and development approach to the solution of the various problems encountered with previous vapor compression distillation units. The design solutions considered are incorporated in the preliminary design of a vapor compression distillation subsystem. The new design concepts are available for integration in the next generation of support systems and, particularly, the regenerative life support evaluation intended for project Spacelab.

Development of polishing methods for Chemical Vapor Deposited Silicon Carbide mirrors for synchrotron radiation

International Nuclear Information System (INIS)

Fuchs, B.A.; Brown, N.J.

1987-01-01

Material properties of Chemical Vapor Deposited Silicon Carbide (CVD SiC) make it ideal for use in mirrors for synchrotron radiation experiments. We developed methods to grind and polish flat samples of CVD SiC down to measured surface roughness values as low as 1.1 Angstroms rms. We describe the processing details, including observations we made during trial runs with alternative processing recipes. We conclude that pitch polishing using progressively finer diamond abrasive, augmented with specific water based lubricants and additives, produces superior results. Using methods based on these results, a cylindrical and a toroidal mirror, each about 100 x 300mm, were respectively finished by Continental Optical and Frank Cooke, Incorporated. WYCO Interferometry shows these mirrors have surface roughness less than 5.7 Angstroms rms. These mirrors have been installed on the LLNL/UC X-ray Calibration and Standards Facility at the Stanford Synthrotron Radiation Laboratory

Stress hysteresis during thermal cycling of plasma-enhanced chemical vapor deposited silicon oxide films

Science.gov (United States)

Thurn, Jeremy; Cook, Robert F.

2002-02-01

The mechanical response of plasma-enhanced chemical vapor deposited SiO2 to thermal cycling is examined by substrate curvature measurement and depth-sensing indentation. Film properties of deposition stress and stress hysteresis that accompanied thermal cycling are elucidated, as well as modulus, hardness, and coefficient of thermal expansion. Thermal cycling is shown to result in major plastic deformation of the film and a switch from a compressive to a tensile state of stress; both athermal and thermal components of the net stress alter in different ways during cycling. A mechanism of hydrogen incorporation and release from as-deposited silanol groups is proposed that accounts for the change in film properties and state of stress.

Development and Validation of Water Vapor Tracers as Diagnostics for the Atmospheric Hydrologic Cycle

Science.gov (United States)

Bosilovich, Michael G.; Schubert, Siegfried D.; Einaudi, Franco (Technical Monitor)

2000-01-01

Understanding of the local and remote sources of water vapor can be a valuable diagnostic in understanding the regional atmospheric hydrologic cycle. In the present study, we have implemented passive tracers as prognostic variables to follow water vapor evaporated in predetermined regions until the water tracer precipitates. The formulation of the sources and sinks of tracer water is generally proportional to the prognostic water vapor variable. Because all water has been accounted for in tracers, the water vapor variable provides the validation of the tracer water and the formulation of the sources and sinks. The tracers have been implemented in a GEOS General Circulation Model (GCM) simulation consisting of several summer periods to determine the source regions of precipitation for the United States and India. The recycling of water and interannual variability of the sources of water will be examined. Potential uses in GCM sensitivity studies, predictability studies and data assimilation will be discussed.

Water Vapor Tacers as Diagnostics of the Regional Atmospheric Hydrologic Cycle

Science.gov (United States)

Bosilovich, Michael G.; Schubert, Siegfried D.; Einaudi, Franco (Technical Monitor)

2000-01-01

Understanding of the local and remote sources of water vapor can be a valuable diagnostic in understanding the regional atmospheric hydrologic cycle, especially in North America where moisture transport and local evaporation are important sources of water for precipitation. In the present study, we have implemented passive tracers as prognostic variables to follow water vapor evaporated in predetermined regions until the water tracer precipitates. All evaporative sources of water are accounted for by tracers, and the water vapor variable provides the validation of the tracer water and the formulation of the sources and sinks. The Geostationary Operational Environmental Satellites General Circulation Model (GEOS GCM) is used to simulate several summer periods to determine the source regions of precipitation for the United States and India. Using this methodology, a detailed analysis of the recycling of water, interannual variability of the sources of water and links to the Great Plains low-level jet and North American monsoon will be presented. Potential uses in GCM sensitivity studies, predictability studies and data assimilation especially regarding the North American monsoon and GEWEX America Prediction Project (GAPP) will be discussed.

Site of water vapor absorption in the desert cockroach, Arenivaga investigata.

Science.gov (United States)

O'Donnell, M J

1977-01-01

The desert cockroach, Arenivaga investigata, can gain weight by absorption of water-vapor from unsaturated atmospheres above 82.5% relative humidity. Blocking the anus or the dorsal surface with wax does not prevent water vapor uptake, but interference with movements of the mouthparts or blocking the mouth with wax-prevents such uptake. Weight gains are associated with the protrusion from the mouth of two bladder-like extensions of the hypopharynx. During absorption these structures are warmer than the surrounding mouthparts, their surface temperature increasing with relative humidity. This suggests that the surfaces of the bladder-like structures function at least as sites for condensation of water vapor, but the precise location of its transfer into the hemolymph has not yet been identified. Images PMID:266217

Processes Controlling Water Vapor in the Winter Arctic Tropopause Region

Science.gov (United States)

Pfister, Leonhard; Selkirk, Henry B.; Jensen, Eric J.; Padolske, James; Sachse, Glen; Avery, Melody; Schoeberl, Mark R.; Mahoney, Michael J.; Richard, Erik

2002-01-01

This work describes transport and thermodynamic processes that control water vapor near the tropopause during the SAGE III-Ozone Loss and Validation Experiment (SOLVE), held during the Arctic 1999/2000 winter season. Aircraft-based water vapor, carbon monoxide, and ozone measurements were analyzed so as to establish how deeply tropospheric air mixes into the Arctic lowermost stratosphere and what the implications are for cloud formation and water vapor removal in this region of the atmosphere. There are three major findings. First, troposphere-to-stratosphere exchange extends into the Arctic stratosphere to about 13 km. Penetration is to similar levels throughout the winter, however, because ozone increases with altitude most rapidly in the early spring, tropospheric air mixes with the highest values of ozone in that season. The effect of this upward mixing is to elevate water vapor mixing ratios significantly above their prevailing stratospheric values of above 5ppmv. Second, the potential for cloud formation in the stratosphere is highest during early spring, with about 20% of the parcels which have ozone values of 300-350 ppbv experiencing ice saturation in a given 10 day period. Third, during early spring, temperatures at the troposphere are cold enough so that 5-10% of parcels experience relative humidities above 100%, even if the water content is as low as 5 ppmv. The implication is that during this period, dynamical processes near the Arctic tropopause can dehydrate air and keep the Arctic tropopause region very dry during early spring.

Formation of β-FeSi 2 thin films by partially ionized vapor deposition

Science.gov (United States)

Harada, Noriyuki; Takai, Hiroshi

2003-05-01

The partially ionized vapor deposition (PIVD) is proposed as a new method to realize low temperature formation of β-FeSi 2 thin films. In this method, Fe is evaporated by E-gun and a few percents of Fe atoms are ionized. We have investigated influences of the ion content and the accelerating voltage of Fe ions on the structural properties of β-FeSi 2 films deposited on Si substrates. It was confirmed that β-FeSi 2 can be formed on Si(1 0 0) substrate by PIVD even at substrate temperature as low as 350, while FeSi by the conventional vacuum deposition. It was concluded that the influence of Fe ions on preferential orientation of β-FeSi 2 depends strongly on the content and the acceleration energy of ions.

Microwave measurements of water vapor partial pressure at high temperatures

International Nuclear Information System (INIS)

Latorre, V.R.

1991-01-01

One of the desired parameters in the Yucca Mountain Project is the capillary pressure of the rock comprising the repository. This parameter is related to the partial pressure of water vapor in the air when in equilibrium with the rock mass. Although there are a number of devices that will measure the relative humidity (directly related to the water vapor partial pressure), they generally will fail at temperatures on the order of 150C. Since thee author has observed borehole temperatures considerably in excess of this value in G-Tunnel at the Nevada Test Site (NTS), a different scheme is required to obtain the desired partial pressure data at higher temperatures. This chapter presents a microwave technique that has been developed to measure water vapor partial pressure in boreholes at temperatures up to 250C. The heart of the system is a microwave coaxial resonator whose resonant frequency is inversely proportional to the square root of the real part of the complex dielectric constant of the medium (air) filling the resonator. The real part of the dielectric constant of air is approximately equal to the square of the refractive index which, in turn, is proportional to the partial pressure of the water vapor in the air. Thus, a microwave resonant cavity can be used to measure changes in the relative humidity or partial pressure of water vapor in the air. Since this type of device is constructed of metal, it is able to withstand very high temperatures. The actual limitation is the temperature limit of the dielectric material in the cable connecting the resonator to its driving and monitoring equipment-an automatic network analyzer in our case. In the following sections, the theory of operation, design, construction, calibration and installation of the microwave diagnostics system is presented. The results and conclusions are also presented, along with suggestions for future work

A Microdrop Generator for the Calibration of a Water Vapor Isotope Ratio Spectrometer

NARCIS (Netherlands)

Iannone, Rosario Q.; Romanini, Daniele; Kassi, Samir; Meijer, Harro A. J.; Kerstel, Erik R. Th.

A microdrop generator is described that produces water vapor with a known isotopic composition and volume mixing ratio for the calibration of a near-infrared diode laser water isotope ratio spectrometer. The spectrometer is designed to measure in situ the water vapor deuterium and oxygen ((17)O and

PROPERTIES AND OPTICAL APPLICATION OF POLYCRYSTALLINE ZINC SELENIDE OBTAINED BY PHYSICAL VAPOR DEPOSITION

Directory of Open Access Journals (Sweden)

A. A. Dunaev

2015-05-01

Full Text Available Findings on production technology, mechanical and optical properties of polycrystalline zinc selenide are presented. The combination of its physicochemical properties provides wide application of ZnSe in IR optics. Production technology is based on the method of physical vapor deposition on a heated substrate (Physical Vapor Deposition - PVD. The structural features and heterogeneity of elemental composition for the growth surfaces of ZnSe polycrystalline blanks were investigated using CAMEBAX X-ray micro-analyzer. Characteristic pyramid-shaped crystallites were recorded for all growth surfaces. The measurements of the ratio for major elements concentrations show their compliance with the stoichiometry of the ZnSe compounds. Birefringence, optical homogeneity, thermal conductivity, mechanical and optical properties were measured. It is established that regardless of polycrystalline condensate columnar and texturing, the optical material is photomechanically isotropic and homogeneous. The actual performance of parts made of polycrystalline optical zinc selenide in the thermal spectral ranges from 3 to 5 μm and from 8 to 14 μm and in the CO2 laser processing plants with a power density of 500 W/cm2 is shown. The developed technology gives the possibility to produce polycrystalline optical material on an industrial scale.

GROUND WATER SAMPLING OF VOCS IN THE WATER/CAPILLARY FRINGE AREA FOR VAPOR INTRUSION ASSESSMENT

Science.gov (United States)

Vapor intrusion has recently been considered a major pathway for increased indoor air contamination from certain volatile organic contaminants (VOCs). The recent Draft EPA Subsurface Vapor Intrusion Guidance Document states that ground water samples should be obtained from the u...

Beeswax–chitosan emulsion coated paper with enhanced water vapor barrier efficiency

International Nuclear Information System (INIS)

Zhang, Weiwei; Xiao, Huining; Qian, Liying

2014-01-01

Graphical abstract: - Highlights: • The water vapor barrier efficiency of paper was enhanced via green-based emulsion coating. • Extremely high lipid content in the emulsion coating layer was firstly utilized to reduce WVTR in emulsion-based film. • A controlled WVTR of beeswax–chitosan emulsion coating could be obtained by dying at specific temperature. - Abstract: For lipid–hydrocolloid emulsion based film, the increase of lipid amount would improve its water vapor barrier property, but also reduce the mechanical strength of the film in the meantime thus leading to a compromised lipid content in the film. However, when the emulsion is coated on paper surface, more lipid could be used for emulsion preparation to enhance the moisture resistance without considering the weakened strength of the film induced by lipid, because the mechanical properties of emulsion coated paper is mainly governed by the strength of base paper instead of the coating layer. In this study, beeswax–chitosan emulsion was first prepared and then coated on paper surface to improve paper's water vapor barrier and water resistance properties. The range and variance analysis of orthogonal test design showed that the order of priorities of the factors accordingly was beeswax solid content, drying temperature and chitosan concentration. The effect of drying temperature on water vapor transmission rate (WVTR) and water contact angle of coated paper was further investigated using 1.2 wt% chitosan and 96% beeswax solid content in the coating layer. The results indicated that water vapor barrier property was in accordance with the density of the coating layer. Atomic force microscope (AFM) was also used to characterize the surface morphology and explain the hydrophobicity of beeswax–chitosan coated paper. It was found that surface beeswax particles melted to wrinkle at high drying temperatures, while roughness values maintained at micro-scale over the temperature range investigated

Exchange reaction between tritiated hydrogen and water vapor

International Nuclear Information System (INIS)

Yamada, Koichi; Takano, Kenichi; Watanabe, Tamaki.

1979-01-01

Exchange reaction of tritiated hydrogen to water vapor under the condition of tritium gas concentration between 1 μCi/l and 1 mCi/l was studied. Tritium gas with hydrogen gas of 5 Torr and water of 20 mg were enclosed in a Pyrex glass ampule with volume of about 100 ml. The mixed gas with water vapor was heated with electric furnace. The heating time was between 2 and 100 hr, and the temperature was 776, 725, 675, 621, and 570.5 0 K. After heating, tritiated water was trapped with liquid nitrogen, and counted with a liquid scintillation counter. The radioactive concentration of initial tritiated hydrogen was measured with a calibrated ionization chamber. The main results obtained are as follows; 1) the concentration of produced tritiated water is well proportioned to that of initial tritiated hydrogen, 2) the activation energy of exchange reaction from tritiated hydrogen to tritiated water is 26.2 kcal/mol and that of inverse reaction is 27.4 kcal/mol, 3) the reaction rate at room temperature which calculated with activation energy is 1.04 x 10 -13 day -1 , and then exchange reaction at room temperature is negligible. (author)

Laboratory studies on the uptake of aromatic hydrocarbons by ice crystals during vapor depositional crystal growth

Science.gov (United States)

Fries, Elke; Starokozhev, Elena; Haunold, Werner; Jaeschke, Wolfgang; Mitra, Subir K.; Borrmann, Stephan; Schmidt, Martin U.

Uptake of aromatic hydrocarbons (AH) by ice crystals during vapor deposit growth was investigated in a walk-in cold chamber at temperatures of 242, 251, and 260 K, respectively. Ice crystals were grown from ambient air in the presence of gaseous AH namely: benzene (C 6H 6), toluene (methylbenzene, C 7H 8), the C 8H 10 isomers ethylbenzene, o-, m-, p-xylene (dimethylbenzenes), the C 9H 12 isomers n-propylbenzene, 4-ethyltoluene, 1,3,5-trimethylbenzene (1,3,5-TMB), 1,2,4-trimethylbenzene (1,2,4-TMB), 1,2,3-trimethylbenzene (1,2,3-TMB), and the C 10H 14 compound tert.-butylbenzene. Gas-phase concentrations calculated at 295 K were 10.3-20.8 μg m -3. Uptake of AH was detected by analyzing vapor deposited ice with a very sensitive method composed of solid-phase micro-extraction (SPME), followed by gas chromatography/mass spectrometry (GC/MS). Ice crystal size was lower than 1 cm. At water vapor extents of 5.8, 6.0 and 8.1 g m -3, ice crystal shape changed with decreasing temperatures from a column at a temperature of 260 K, to a plate at 251 K, and to a dendrite at 242 K. Experimentally observed ice growth rates were between 3.3 and 13.3×10 -3 g s -1 m -2 and decreased at lower temperatures and lower value of water vapor concentration. Predicted growth rates were mostly slightly higher. Benzene, toluene, ethylbenzene, and xylenes (BTEX) were not detected in ice above their detection limits (DLs) of 25 pg g ice-1 (toluene, ethylbenzene, xylenes) and 125 pg g ice-1 (benzene) over the entire temperature range. Median concentrations of n-propylbenzene, 4-ethyltoluene, 1,3,5-TMB, tert.-butylbenzene, 1,2,4-TMB, and 1,2,3-TMB were between 4 and 176 pg g ice-1 at gas concentrations of 10.3-10.7 μg m -3 calculated at 295 K. Uptake coefficients ( K) defined as the product of concentration of AH in ice and density of ice related to the product of their concentration in the gas phase and ice mass varied between 0.40 and 10.23. K increased with decreasing temperatures. Values of

Nonlinear response of tropical lower-stratospheric temperature and water vapor to ENSO

Directory of Open Access Journals (Sweden)

C. I. Garfinkel

2018-04-01

Full Text Available A series of simulations using the NASA Goddard Earth Observing System Chemistry–Climate Model are analyzed in order to aid in the interpretation of observed interannual and sub-decadal variability in the tropical lower stratosphere over the past 35 years. The impact of El Niño–Southern Oscillation on temperature and water vapor in this region is nonlinear in boreal spring. While moderate El Niño events lead to cooling in this region, strong El Niño events lead to warming, even as the response of the large-scale Brewer–Dobson circulation appears to scale nearly linearly with El Niño. This nonlinearity is shown to arise from the response in the Indo-West Pacific to El Niño: strong El Niño events lead to tropospheric warming extending into the tropical tropopause layer and up to the cold point in this region, where it allows for more water vapor to enter the stratosphere. The net effect is that both strong La Niña and strong El Niño events lead to enhanced entry water vapor and stratospheric moistening in boreal spring and early summer. These results lead to the following interpretation of the contribution of sea surface temperatures to the decline in water vapor in the early 2000s: the very strong El Niño event in 1997/1998, followed by more than 2 consecutive years of La Niña, led to enhanced lower-stratospheric water vapor. As this period ended in early 2001, entry water vapor concentrations declined. This effect accounts for approximately one-quarter of the observed drop.

Nonlinear response of tropical lower-stratospheric temperature and water vapor to ENSO

Science.gov (United States)

Garfinkel, Chaim I.; Gordon, Amit; Oman, Luke D.; Li, Feng; Davis, Sean; Pawson, Steven

2018-04-01

A series of simulations using the NASA Goddard Earth Observing System Chemistry-Climate Model are analyzed in order to aid in the interpretation of observed interannual and sub-decadal variability in the tropical lower stratosphere over the past 35 years. The impact of El Niño-Southern Oscillation on temperature and water vapor in this region is nonlinear in boreal spring. While moderate El Niño events lead to cooling in this region, strong El Niño events lead to warming, even as the response of the large-scale Brewer-Dobson circulation appears to scale nearly linearly with El Niño. This nonlinearity is shown to arise from the response in the Indo-West Pacific to El Niño: strong El Niño events lead to tropospheric warming extending into the tropical tropopause layer and up to the cold point in this region, where it allows for more water vapor to enter the stratosphere. The net effect is that both strong La Niña and strong El Niño events lead to enhanced entry water vapor and stratospheric moistening in boreal spring and early summer. These results lead to the following interpretation of the contribution of sea surface temperatures to the decline in water vapor in the early 2000s: the very strong El Niño event in 1997/1998, followed by more than 2 consecutive years of La Niña, led to enhanced lower-stratospheric water vapor. As this period ended in early 2001, entry water vapor concentrations declined. This effect accounts for approximately one-quarter of the observed drop.

An interim reference model for the variability of the middle atmosphere water vapor distribution

Science.gov (United States)

Remsberg, E. E.; Russell, J. M., III; Wu, C.-Y.

1990-01-01

A reference model for the middle atmosphere water vapor distribution for some latitudes and seasons was developed using two data sets. One is the seven months of Nimbus LIMS data obtained during November 1978 to May 1979 over the range 64 deg S - 84 deg N latitude and from about 100-mb to 1-mb altitude, and the other is represented by water vapor profiles from 0.2 mb to 0.01 mb in the mid-mesosphere, measured on ground at several fixed mid-latitude sites in the Northern Hemisphere, using microwave-emission techniques. This model provides an interim water vapor profile for the entire vertical range of the middle atmosphere, with accuracies of better than 25 percent. The daily variability of stratospheric water vapor profiles about the monthly mean is demonstrated, and information is provided on the longitudinal variability of LIMS water vapor profiles about the daily, weekly, and monthly zonal means.

CFD modeling of condensation process of water vapor in supersonic flows

DEFF Research Database (Denmark)

Yang, Yan; Walther, Jens Honore; Yan, Yuying

2017-01-01

The condensation phenomenon of vapor plays an important role in various industries, such as the steam flow in turbines and refrigeration system. A mathematical model is developed to predict the spontaneous condensing phenomenon in the supersonic flows using the nucleation and droplet growth...... theories. The numerical approach is validated with the experimental data, which shows a good agreement between them. The condensation characteristics of water vapor in the Laval nozzle are described in detail. The results show that the condensation process is a rapid variation of the vapor-liquid phase...... change both in the space and in time. The spontaneous condensation of water vapor will not appear immediately when the steam reaches the saturation state. Instead, it occurs further downstream the nozzle throat, where the steam is in the state of supersaturation....

Relative spectral absorption of solar radiation by water vapor and cloud droplets

Science.gov (United States)

Davies, R.; Ridgway, W. L.

1983-01-01

A moderate (20/cm) spectral resolution model which accounts for both the highly variable spectral transmission of solar radiation through water vapor within and above cloud, as well as the more slowly varying features of absorption and anisotropic multiple scattering by the cloud droplets, is presented. Results from this model as applied to the case of a typical 1 km thick stratus cloud in a standard atmosphere, with cloud top altitude of 2 km and overhead sun, are discussed, showing the relative importance of water vapor above the cloud, water vapor within the cloud, and cloud droplets on the spectral absorption of solar radiation.

Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition

International Nuclear Information System (INIS)

Kakiuchi, H.; Nakahama, Y.; Ohmi, H.; Yasutake, K.; Yoshii, K.; Mori, Y.

2005-01-01

Silicon nitride (SiN x ) films have been prepared at extremely high deposition rates by the atmospheric pressure plasma chemical vapor deposition (AP-PCVD) technique on Si(001) wafers from gas mixtures containing He, H 2 , SiH 4 and N 2 or NH 3 . A 150 MHz very high frequency (VHF) power supply was used to generate high-density radicals in the atmospheric pressure plasma. Deposition rate, composition and morphology of the SiN x films prepared with various deposition parameters were studied by scanning electron microscopy and Auger electron spectroscopy. Fourier transformation infrared (FTIR) absorption spectroscopy was also used to characterize the structure and the chemical bonding configurations of the films. Furthermore, etching rate with buffered hydrofluoric acid (BHF) solution, refractive index and capacitance-voltage (C-V) characteristics were measured to evaluate the dielectric properties of the films. It was found that effective passivation of dangling bonds and elimination of excessive hydrogen atoms at the film-growing surface seemed to be the most important factor to form SiN x film with a dense Si-N network. The C-V curve of the optimized film showed good interface properties, although further improvement was necessary for use in the industrial metal-insulator-semiconductor (MIS) applications

Modeling of gas-phase chemistry in the chemical vapor deposition of polysilicon in a cold wall system

Energy Technology Data Exchange (ETDEWEB)

Toprac, A.J.; Edgar, T.F.; Trachtenberg, I. (Univ. of Texas, Austin, TX (United States). Dept. of Chemical Engineering)

1993-06-01

The relative contribution of gas-phase chemistry to deposition processes is an important issue both from the standpoint of operation and modeling of these processes. In polysilicon deposition from thermally activated silane in a cold wall rapid thermal chemical vapor deposition (RTCVD) system, the relative contribution of gas-phase chemistry to the overall deposition rate was examined by a mass-balance model. Evaluating the process at conditions examined experimentally, the model indicated that gas-phase reactions may be neglected to good accuracy in predicting polysilicon deposition rate. The model also provided estimates of the level of gas-phase generated SiH[sub 2] associated with deposition on the cold-process chamber walls.

Water Vapor Tracers as Diagnostics of the Regional Hydrologic Cycle

Science.gov (United States)

Bosilovich, Michael G.; Schubert, Siegfried D.; Einaudi, Franco (Technical Monitor)

2001-01-01

Numerous studies suggest that local feedback of surface evaporation on precipitation, or recycling, is a significant source of water for precipitation. Quantitative results on the exact amount of recycling have been difficult to obtain in view of the inherent limitations of diagnostic recycling calculations. The current study describes a calculation of the amount of local and remote geographic sources of surface evaporation for precipitation, based on the implementation of three-dimensional constituent tracers of regional water vapor sources (termed water vapor tracers, WVT) in a general circulation model. The major limitation on the accuracy of the recycling estimates is the veracity of the numerically simulated hydrological cycle, though we note that this approach can also be implemented within the context of a data assimilation system. In the WVT approach, each tracer is associated with an evaporative source region for a prognostic three-dimensional variable that represents a partial amount of the total atmospheric water vapor. The physical processes that act on a WVT are determined in proportion to those that act on the model's prognostic water vapor. In this way, the local and remote sources of water for precipitation can be predicted within the model simulation, and can be validated against the model's prognostic water vapor. As a demonstration of the method, the regional hydrologic cycles for North America and India are evaluated for six summers (June, July and August) of model simulation. More than 50% of the precipitation in the Midwestern United States came from continental regional sources, and the local source was the largest of the regional tracers (14%). The Gulf of Mexico and Atlantic regions contributed 18% of the water for Midwestern precipitation, but further analysis suggests that the greater region of the Tropical Atlantic Ocean may also contribute significantly. In most North American continental regions, the local source of precipitation is

Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Hemawan, Kadek W.; Gou, Huiyang; Hemley, Russell J. [Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Rd., NW, Washington, DC 20015 (United States)

2015-11-02

Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH{sub 4}/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H{sub 2} into the deposition gas chemistry. Electronically excited species of CN, C{sub 2}, Ar, N{sub 2}, CH, H{sub β}, and H{sub α} were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T{sub 2g} phonon at 1333 cm{sup −1} peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

The Effect of Cirrus Clouds on Water Vapor Transport in the Upper Troposphere and Lower Stratosphere

Science.gov (United States)

Lei, L.; McCormick, M. P.; Anderson, J.

2017-12-01

Water vapor plays an important role in the Earth's radiation budget and stratospheric chemistry. It is widely accepted that a large percentage of water vapor entering the stratosphere travels through the tropical tropopause and is dehydrated by the cold tropopause temperature. The vertical transport of water vapor is also affected by the radiative effects of cirrus clouds in the tropical tropopause layer. This latter effect of cirrus clouds was investigated in this research. The work focuses on the tropical and mid-latitude region (50N-50S). Water vapor data from the Microwave Limb Sounder (MLS) and cirrus cloud data from the Cloud-Aerosol Lidar and Infrared pathfinder Satellite Observation (CALIPSO) instruments were used to investigate the relationship between the water vapor and the occurrence of cirrus cloud. A 10-degree in longitude by 10-degree in latitude resolution was chosen to bin the MLS and CALIPSO data. The result shows that the maximum water vapor in the upper troposphere (below 146 hPa) is matched very well with the highest frequency of cirrus cloud occurrences. Maximum water vapor in the lower stratosphere (100 hPa) is partly matched with the maximum cirrus cloud occurrence in the summer time. The National Oceanic and Atmospheric Administration Interpolated Outgoing Longwave Radiation data and NCEP-DOE Reanalysis 2 wind data were used also to investigate the relationship between the water vapor entering the stratosphere, deep convection, and wind. Results show that maximum water vapor at 100 hPa coincides with the northern hemisphere summer-time anticyclone. The effects from both single-layer cirrus clouds and cirrus clouds above the anvil top on the water vapor entering the stratosphere were also studied and will be presented.

Monitoring middle-atmospheric water vapor over Seoul by using a 22 GHz ground-based radiometer SWARA

Science.gov (United States)

Ka, Soohyun; de Wachter, Evelyn; Kaempfer, Niklaus; Oh, Jung Jin

2010-10-01

Water vapor is the strongest natural greenhouse gas in the atmosphere. It is most abundant in the troposphere at low altitudes, due to evaporation at the ocean surface, with maximum values of around 6 g/kg. The amount of water vapor reaches a minimum at tropopause level and increases again in the middle atmosphere through oxidation of methane and vertical transport. Water vapor has both positive and negative effects on global warming, and we need to study how it works on climate change by monitoring water vapor concentration in the middle atmosphere. In this paper, we focus on the 22 GHz ground-based radiometer called SWARA (Seoul Water vapor Radiometer) which has been operated at Sookmyung women's university in Seoul, Korea since Oct. 2006. It is a joint project of the University of Bern, Switzerland, and the Sookmyung Women's University of Seoul, South Korea. The SWARA receives 22.235 GHz emitted from water vapor spontaneously and converts down to 1.5 GHz with +/- 0.5 GHz band width in 61 kHz resolution. To represent 22.235 GHz water vapor spectrum precisely, we need some calibration methods because the signal shows very weak intensity in ~0.1 K on the ground. For SWARA, we have used the balancing and the tipping curve methods for a calibration. To retrieve the water vapor profile, we have applied ARTS and Qpack software. In this paper, we will present the calibration methods and water vapor variation over Seoul for the last 4 years.

Water vapor stable isotope observations from tropical Australia

KAUST Repository

Parkes, Stephen

2015-04-01

The response of the tropical hydrological cycle to anthropogenically induced changes in radiative forcing is one of the largest discrepancies between climate models. Paleoclimate archives of the stable isotopic composition of precipitation in the tropics indicate a relationship with precipitation amount that could be exploited to study past hydroclimate and improve our knowledge of how this region responds to changes in climate forcing. Recently modelling studies of convective parameterizations fitted with water isotopes and remote sensing of water vapor isotopes in the tropics have illustrated uncertainty in the assumed relationship with rainfall amount. Therefore there is a need to collect water isotope data in the tropics that can be used to evaluate these models and help identify the relationships between the isotopic composition of meteoric waters and rainfall intensity. However, data in this region is almost non-existent. Here we present in-situ water vapor isotopic measurements and the HDO retrievals from the co-located Total Column Carbon Observing Network (TCCON) site at Darwin in Tropical Australia. The Darwin site is interestingly placed within the tropical western pacific region and is impacted upon by a clear monsoonal climate, and key climate cycles including ENSO and Madden Julian Oscillations. The analysis of the data illustrated relationships between water vapor isotopes and humidity which demonstrated the role of precipitation processes in the wet season and air mass mixing during the dry season. Further the wet season observations show complex relationships between humidity and isotopes. A simple Rayleigh distillation model was not obeyed, instead the importance of rainfall re-evaporation in generating the highly depleted signatures was demonstrated. These data potentially provide a useful tool for evaluating model parameterizations in monsoonal regions as they demonstrate relationships with precipitation processes that cannot be observed with

Propelling a water drop with the vapor-mediated Marangoni effect

Science.gov (United States)

Kim, Seungho; Kim, Ho-Young

2013-11-01

We show that a water drop on solid surfaces can be propelled just by placing a volatile alcohol drop nearby. It is found to be because the water-air interface near the alcohol drop mixes with alcohol vapor, thereby locally lowering the surface tension. The surface-tension-gradient induces the motion of the water drop, enabling the trajectory control of water drops through the motion of remote alcohol drops. This vapor-mediated Marangoni effect also gives rise to other interesting interfacial flow phenomena, such as nucleation of holes on a water film and ballooning of a water drop hanging from a syringe needle with the approach of an alcohol drop. We visualize such interfacial dynamics with a high-speed camera and rationalize their salient features by scaling analysis. This work was supported by the National Research Foundation of Korea (grant no. 2012-008023).

ZnO nanowall network grown by chemical vapor deposition technique

Energy Technology Data Exchange (ETDEWEB)

Mukherjee, Amrita, E-mail: but.then.perhaps@gmail.com; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

2015-06-24

Network of wedge shaped ZnO nanowalls are grown on c-sapphire by Chemical Vapor Deposition (CVD) technique. Structural studies using x-ray diffraction show much better crystallinity in the nanowall sample as compared to the continuous film. Moreover, the defect related broad green luminescence is found to be suppressed in the nanowall sample. The low temperature photoluminescence study also suggests the quantum confinement of carriers in nanowall sample. Electrical studies performed on the nanowalls show higher conductivity, which has been explained in terms of the reduction of scattering cross-section as a result of 1D quantum confinement of carriers on the tip of the nanowalls.

A study of the performance and properties of diamond like carbon (DLC) coatings deposited by plasma chemical vapor deposition (CVD) for two stroke engine components

Energy Technology Data Exchange (ETDEWEB)

Tither, D. [BEP Grinding Ltd., Manchester (United Kingdom); Ahmed, W.; Sarwar, M.; Penlington, R. [Univ. of Northumbria, Newcastle-upon-Tyne (United Kingdom)

1995-12-31

Chemical vapor deposition (CVD) using microwave and RF plasma is arguably the most successful technique for depositing diamond and diamond like carbon (DLC) films for various engineering applications. However, the difficulties of depositing diamond are nearly as extreme as it`s unique combination of physical, chemical and electrical properties. In this paper, the modified low temperature plasma enhanced CVD system is described. The main focus of this paper will be work related to deposition of DLC on metal matrix composite materials (MMCs) for application in two-stroke engine components and results will be presented from SEM, mechanical testing and composition analysis studies. The authors have demonstrated the feasibility of depositing DLC on MMCs for the first time using a vacuum deposition process.

CONDENSATION OF WATER VAPOR IN A VERTICAL TUBE CONDENSER

Directory of Open Access Journals (Sweden)

Jan Havlík

2015-10-01

Full Text Available This paper presents an analysis of heat transfer in the process of condensation of water vapor in a vertical shell-and-tube condenser. We analyze the use of the Nusselt model for calculating the condensation heat transfer coefficient (HTC inside a vertical tube and the Kern, Bell-Delaware and Stream-flow analysis methods for calculating the shell-side HTC from tubes to cooling water. These methods are experimentally verified for a specific condenser of waste process vapor containing air. The operating conditions of the condenser may be different from the assumptions adopted in the basic Nusselt theory. Modifications to the Nusselt condensation model are theoretically analyzed.

Effects of water vapor on flue gas conditioning in the electric fields with corona discharge

Energy Technology Data Exchange (ETDEWEB)

Liqiang, QI, E-mail: qi_liqiang@163.com; Yajuan, Zhang

2013-07-15

Highlights: • The influence mechanism of water vapor humidification on SO{sub 2} oxidation was analyzed. •The effects of water vapor on the specific resistance in fly ash in ESPs were reported. • The effects of water vapor on the size distribution and specific surface area of fly ash were discussed. • The adhesive characteristic of fly ash in different water vapor was experimented. -- Abstract: Sulfur dioxide (SO{sub 2}) removal via pulsed discharge nonthermal plasma in the absence of ammonia was investigated to determine how electrostatic precipitators (ESPs) can effectively collect particulate matter less than 2.5 μm in diameter from flue gas. SO{sub 2} removal increased as water vapor concentration increased. In a wet-type plasma reactor, directing a gas-phase discharge plasma toward the water film surface significantly enhanced the liquid-phase oxidation of HSO{sub 3}{sup −} to SO{sub 4}{sup 2−}. Comparisons of various absorbents revealed that the hydroxyl radical is a key factor in plasma-induced liquid-phase reactions. The resistivity, size distribution, and cohesive force of fly ash at different water vapor contents were measured using a Bahco centrifuge, which is a dust electrical resistivity test instrument, as well as a cohesive force test apparatus developed by the researchers. When water vapor content increased by 5%, fly ash resistivity in flue gas decreased by approximately two orders of magnitude, adhesive force and size increased, and specific surface area decreased. Therefore, ESP efficiency increased.

Electronic and Mechanical Properties of GrapheneGermanium Interfaces Grown by Chemical Vapor Deposition

Science.gov (United States)

2015-10-27

that graphene acts as a diffusion barrier to ambient contaminants, as similarly prepared bare Ge exposed to ambient conditions possesses a much...in-plane order underneath the graphene (Figure 1b,f). The stabilization of Ge terraces with half-step heights indicates that the graphene modifies the...Electronic and Mechanical Properties of Graphene −Germanium Interfaces Grown by Chemical Vapor Deposition Brian Kiraly,†,‡ Robert M. Jacobberger

Chemically vapor-deposited ZrB2 as a selective solar absorber

International Nuclear Information System (INIS)

Randich, E.; Allred, D.D.

1981-01-01

Coatings of ZrB 2 and TiB 2 for photothermal solar absorber applications were prepared using chemical vapor deposition (CVD) techniques. Oxidation tests suggest a maximum temperature limit for air exposure of 600 K for TiB 2 and 800 K for ZrB 2 . Both materials exhibit innate spectral selectivity with an emittance at 375 K ranging from 0.06 to 0.09, a solar absorptance for ZrB 2 ranging from 0.67 to 0.77 and a solar absorptance for TiB 2 ranging from 0.46 to 0.59. ZrB 2 has better solar selectivity and more desirable oxidation behavior than TiB 2 . A 0.071 μm antireflection coating of Si 3 N 4 deposited onto the ZrB 2 coating leads to an increase in absorptance from 0.77 to 0.93, while the emittance remains unchanged. (Auth.)

Mg-doped ZnO thin films deposited by the atomic layer chemical vapor deposition for the buffer layer of CIGS solar cell

Energy Technology Data Exchange (ETDEWEB)

Li, Zhao-Hui [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of); Center for Photovoltaic and Solar Energy, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen city 518055 (China); Cho, Eou-Sik [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of); Kwon, Sang Jik, E-mail: sjkwon@gachon.ac.kr [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of)

2014-09-30

Highlights: • Mg-doped ZnO film as CIGS buffer was prepared by ALD process. • The grain size of ZnO-like hexagonal phase decreased with Mg content. • The transmittance and crystallinity increased but the band gap decreased with temperature. - Abstract: Mg-doped ZnO [(Zn, Mg)O] thin films were prepared by atomic layer chemical vapor deposition (ALCVD) process with different Mg content, using diethyl zinc, biscyclopentadienyl magnesium, and water as the metal and oxygen sources, respectively. The ratio of Mg to Zn was varied by changing the pulse ratio of MgCp{sub 2} to DEZn precursor to study its effect on the properties of (Zn, Mg)O thin films. From the experimental results, it was shown that the grain size of the ZnO-like hexagonal phase (Zn, Mg)O decreased as the Mg content increased. But the transmittance and optical band gap of (Zn, Mg)O films increased with the increase of the Mg content. In addition, the effect of the substrate temperature on the properties of (Zn, Mg)O films was also investigated. The deposition rate, transmittance, and crystallinity of (Zn, Mg)O films increased as the substrate temperature increased. But its band gap decreased slightly with the increase of substrate temperature.

Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Kim, Min Hwa; Moon, Dae Young; Park, Jinsub; Nanishi, Yasushi; Yi, Gyu-Chul; Yoon, Euijoon

2012-01-01

We demonstrated the growth of catalyst-free InN nanostructures including nanorods on (0001) Al 2 O 3 substrates using metal-organic chemical vapor deposition. As the growth time increased, growth rate along c-direction increased superlinearly with decreasing c-plane area fractions and increasing side wall areas. It was also found that desorption from the sidewalls of InN nanostructures during the InN nanorods formation was one of essential key parameters of the growth mechanism. We propose a growth model to explain the InN nanostructure evolution by considering the side wall desorption and re-deposition of indium at top c-plane surfaces. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Partitioning Water Vapor and Carbon Dioxide Fluxes using Correlation Analysis

Science.gov (United States)

Scanlon, T. M.

2008-12-01

A variety of methods are currently available to partition water vapor fluxes (into components of transpiration and direct evaporation) and carbon dioxide fluxes (into components of photosynthesis and respiration), using chambers, isotopes, and regression modeling approaches. Here, a methodology is presented that accounts for correlations between high-frequency measurements of water vapor (q) and carbon dioxide (c) concentrations being influenced by their non-identical source-sink distributions and the relative magnitude of their constituent fluxes. Flux-variance similarity assumptions are applied separately to the stomatal and the non-stomatal exchange, and the flux components are identified by considering the q-c correlation. Water use efficiency for the vegetation, and how it varies with respect to vapor pressure deficit, is the only input needed for this approach that uses standard eddy covariance measurements. The method is demonstrated using data collected over a corn field throughout a growing season. In particular, the research focuses on the partitioning of the water flux with the aim of improving how direct evaporation is handled in soil-vegetation- atmosphere transfer models over the course of wetting and dry-down cycles.

Waste storage in the vadose zone affected by water vapor condensation and leaching

International Nuclear Information System (INIS)

Cary, J.W.; Gee, G.W.; Whyatt, G.A.

1990-08-01

One of the major concerns associated with waste storage in the vadose zone is that toxic materials may somehow be leached and transported by advecting water down to the water table and reach the accessible environment through either a well or discharge to a river. Consequently, care is taken to provide barriers over and around the storage sites to reduce contact between infiltrating water and the buried waste form. In some cases, it is important to consider the intrusion of water vapor as well as water in the liquid phase. Water vapor diffuses through porous material along vapor pressure gradients. A slightly low temperature, or the presence of water-soluble components in the waste, favors water condensation resulting in leaching of the waste form and advection of water-soluble components to the water table. A simple analysis is presented that allows one to estimate the rate of vapor condensation as a function of waste composition and backfill materials. An example using a waste form surrounded by concrete and gravel layers is presented. The use of thermal gradients to offset condensation effects of water-soluble components in the waste form is discussed. Thermal gradients may be controlled by design factors that alter the atmospheric energy exchange across the soil surface or that interrupt the geothermal heat field. 7 refs., 2 figs., 1 tab

Characterization of photoluminescent europium doped yttrium oxide thin-films prepared by metallorganic chemical vapor deposition

International Nuclear Information System (INIS)

McKittrick, J.; Bacalski, C.F.; Hirata, G.A.; Hubbard, K.M.; Pattillo, S.G.; Salazar, K.V.; Trkula, M.

1998-01-01

Europium doped yttrium oxide, (Y 1-x Eu x ) 2 O 3 , thin-films were deposited on silicon and sapphire substrates by metallorganic chemical vapor deposition (MOCVD). The films were grown in a MOCVD chamber reacting yttrium and europium tris(2,2,6,6-tetramethyl-3,5,-heptanedionates) precursors in an oxygen atmosphere at low pressures (5 Torr) and low substrate temperatures (500--700 C). The films deposited at 500 C were flat and composed of nanocrystalline regions of cubic Y 2 O 3 , grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600 C developed from the flat, nanocrystalline morphology into a plate-like growth morphology oriented in the [111] with increasing deposition time. Monoclinic Y 2 O 3 :Eu 3+ was observed in x-ray diffraction for deposition temperatures ≥600 C on both (111) Si and (001) sapphire substrates. This was also confirmed by the photoluminescent emission spectra

Differential Absorption Radar: An Emerging Technology for Remote Sounding of Water Vapor Within Clouds

Science.gov (United States)

Lebsock, M. D.; Millan Valle, L. F.; Cooper, K. B.; Siles, J.; Monje, R.

2017-12-01

We present the results of our efforts to build and demonstrate the first Differential Absorption Radar (DAR), which will provide unique capabilities to remotely sound for water vapor within cloudy and precipitating atmospheres. The approach leverages multiple radar channels located near the 183 GHz water vapor absorption feature to simultaneously derive microphysical and water vapor profiles. The DAR technique has the potential to neatly complement existing water vapor sounding techniques such as infrared and microwave sounding and GPS radio occultation. These precisions rival those of existing water vapor remote sensing instruments. The approach works best from above clouds because the water vapor burden and line width increases towards the Earth surface allowing increased sampling from the top-down compared with bottom-up. From an airborne or satellite platform channels can be selected that target either upper-tropospheric or lower-tropospheric clouds. Our theoretical studies suggest that the water vapor concentration can be retrieved to within 1-3 gm-3 and the column integrated water vapor can be retrieved to within 1 kgm-2. The high-frequency radar is only recently enabled by technological advances that have allowed us to demonstrate 0.5 W of continuous power near 183 GHz. We are currently developing an airborne DAR using a Frequency Modulated Continuous Wave (FMCW) architecture with a quasi-optical duplexer providing 80 dB of transmit/receive isolation. A prototype of this instrument recently made the first ever range resolved DAR measurements of humidity out to several hundred meters during a light rain event at JPL. The spectral dependence of the attenuation was in excellent agreement with the predicted attenuation based on nearby weather stations, proving for the first time the feasibility of the concept. A major impediment to implementing DAR is the international regulation of radio-frequency transmissions below 300 GHz. The major roadblocks and potential

An economic analysis of the deposition of electrochromic WO{sub 3} via sputtering or plasma enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Garg, D. [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195-7201 (United States); Henderson, P.B. [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195-7201 (United States)]. E-mail: henderpb@airproducts.co; Hollingsworth, R.E. [ITN Energy Systems Inc., 8130 Shaffer Pkwy, Littleton, CO 80127 (United States); Jensen, D.G. [ITN Energy Systems Inc., 8130 Shaffer Pkwy, Littleton, CO 80127 (United States)

2005-06-15

The costs of manufacturing electrochromic WO{sub 3} thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO{sub 3} for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF{sub 6}, sputtering cost is dominated by labor and depreciation.

Patterned growth of carbon nanotubes obtained by high density plasma chemical vapor deposition

Science.gov (United States)

Mousinho, A. P.; Mansano, R. D.

2015-03-01

Patterned growth of carbon nanotubes by chemical vapor deposition represents an assembly approach to place and orient nanotubes at a stage as early as when they are synthesized. In this work, the carbon nanotubes were obtained at room temperature by High Density Plasmas Chemical Vapor Deposition (HDPCVD) system. This CVD system uses a new concept of plasma generation, where a planar coil coupled to an RF system for plasma generation was used with an electrostatic shield for plasma densification. In this mode, high density plasmas are obtained. We also report the patterned growth of carbon nanotubes on full 4-in Si wafers, using pure methane plasmas and iron as precursor material (seed). Photolithography processes were used to pattern the regions on the silicon wafers. The carbon nanotubes were characterized by micro-Raman spectroscopy, the spectra showed very single-walled carbon nanotubes axial vibration modes around 1590 cm-1 and radial breathing modes (RBM) around 120-400 cm-1, confirming that high quality of the carbon nanotubes obtained in this work. The carbon nanotubes were analyzed by atomic force microscopy and scanning electron microscopy too. The results showed that is possible obtain high-aligned carbon nanotubes with patterned growth on a silicon wafer with high reproducibility and control.

Dynamic Control of Particle Deposition in Evaporating Droplets by an External Point Source of Vapor.

Science.gov (United States)

Malinowski, Robert; Volpe, Giovanni; Parkin, Ivan P; Volpe, Giorgio

2018-02-01

The deposition of particles on a surface by an evaporating sessile droplet is important for phenomena as diverse as printing, thin-film deposition, and self-assembly. The shape of the final deposit depends on the flows within the droplet during evaporation. These flows are typically determined at the onset of the process by the intrinsic physical, chemical, and geometrical properties of the droplet and its environment. Here, we demonstrate deterministic emergence and real-time control of Marangoni flows within the evaporating droplet by an external point source of vapor. By varying the source location, we can modulate these flows in space and time to pattern colloids on surfaces in a controllable manner.

Sensitive coating for water vapors detection based on thermally sputtered calcein thin films.

Science.gov (United States)

Kruglenko, I; Shirshov, Yu; Burlachenko, J; Savchenko, A; Kravchenko, S; Manera, M G; Rella, R

2010-09-15

In this paper the adsorption properties of thermally sputtered calcein thin films towards water and other polar molecules vapors are studied by different characterization techniques: quartz crystal microbalance, surface plasmon resonance and visible spectroscopy. Sensitivity of calcein thin films to water vapors resulted much higher as compared with those of a number of dyes whose structure was close to that of calcein. All types of sensors with calcein coatings have demonstrated linear concentration dependences in the wide range of water vapor pressure from low concentrations up to 27,000 ppm (close to saturation). At higher concentrations of water vapor all sensors demonstrate the abrupt increase of the response (up to two orders). A theoretical model is advanced explaining the adsorption properties of calcein thin films taking into account their chemical structure and peculiarities of molecular packing. The possibility of application of thermally sputtered calcein films in sensing technique is discussed. Copyright (c) 2010 Elsevier B.V. All rights reserved.

Dual effects of water vapor on ceria-supported gold clusters.

Science.gov (United States)

Li, Zhimin; Li, Weili; Abroshan, Hadi; Ge, Qingjie; Li, Gao; Jin, Rongchao

2018-04-05

Atomically precise nanocatalysts are currently being intensely pursued in catalysis research. Such nanocatalysts can serve as model catalysts for gaining fundamental insights into catalytic processes. In this work we report a discovery that water vapor provokes the mild removal of surface long-chain ligands on 25-atom Au25(SC12H25)18 nanoclusters in a controlled manner. Using the resultant Au25(SC12H25)18-x/CeO2 catalyst and CO oxidation as a probe reaction, we found that the catalytic activity of cluster/CeO2 is enhanced from nearly zero conversion of CO (in the absence of water) to 96.2% (in the presence of 2.3 vol% H2O) at the same temperature (100 °C). The cluster catalysts exhibit high stability during the CO oxidation process under moisture conditions (up to 20 vol% water vapor). Water vapor plays a dual role in gold cluster-catalyzed CO oxidation. FT-IR and XPS analyses in combination with density functional theory (DFT) simulations suggest that the "-SC12H25" ligands are easier to be removed under a water vapor atmosphere, thus generating highly active sites. Moreover, the O22- peroxide species constitutes the active oxygen species in CO oxidation, evidenced by Raman spectroscopy analysis and isotope experiments on the CeO2 and cluster/CeO2. The results also indicate the perimeter sites of the interface of Au25(SC12H25)18-x/CeO2 to be active sites for catalytic CO oxidation. The controlled exposure of active sites under mild conditions is of critical importance for the utilization of clusters in catalysis.

Relationship between changes in the upper and lower tropospheric water vapor: A revisit

Science.gov (United States)

Yang, M.; Sun, D. Z.; Zhang, G. J.

2017-12-01

Upper tropospheric water vapor response to enhanced greenhouse gas forcing is as important as the lower tropospheric water vapor response in determining climate sensitivity. Early studies using older versions of climate models have suggested that the upper- and lower-troposphere water vapor changes are more strongly coupled in the climate models than in the observations. Here we reexamine this issue using a state-of-the-art climate model—the NCAR community model CAM5. Specifically, we have calculated the correlations between interannual variations of specific humidity in all levels of the troposphere with that at the surface in CAM5 and in the observations (as represented by the updated ERA-Interim and NCEP reanalysis). It is found that the previously noted biases in how strongly upper tropospheric water vapor and lower troposphere water vapor are linked still exist in CAM5—the change in the tropical averaged upper tropospheric water vapor is more strongly correlated with the change in the surface. However, this bias disappears in the averaged correlation obtained by averaging the point-by-point correlations over the tropics. The spatial pattern of the point-by-point correlations reveals that the better agreement between the model and the observations is related to the opposite model biases in different regions: the correlation is weaker in the model in the western Pacific, but stronger in the central and eastern Pacific. Further analysis of precipitation fields suggests that the weaker (stronger) coupling between tropospheric water vapor and surface moisture over western (central-eastern) Pacific in model is related to weaker (stronger) simulated convective activities in these regions. More specifically, during El Nino, the model has excessive deep convection in the central Pacific, but too littler deep convection in western Pacific. Implications of the results are discussed in the context of climate change as well as in the context of how to improve the model

Plasma and Ion Assistance in Physical Vapor Deposition: A Historical Perspective

International Nuclear Information System (INIS)

Anders, Andre

2007-01-01

Deposition of films using plasma or plasma-assist can be traced back surprisingly far, namely to the 18th century for arcs and to the 19th century for sputtering. However, only since the 1960s the coatings community considered other processes than evaporation for large scale commercial use. Ion Plating was perhaps the first important process, introducing vapor ionization and substrate bias to generate a beam of ions arriving on the surface of the growing film. Rather independently, cathodic arc deposition was established as an energetic condensation process, first in the former Soviet Union in the 1970s, and in the 1980s in the Western Hemisphere. About a dozen various ion-based coating technologies evolved in the last decades, all characterized by specific plasma or ion generation processes. Gridded and gridless ion sources were taken from space propulsion and applied to thin film deposition. Modeling and simulation have helped to make plasma and ions effects to be reasonably well understood. Yet--due to the complex, often non-linear and non-equilibrium nature of plasma and surface interactions--there is still a place for the experience plasma 'sourcerer'

Plasma and Ion Assistance in Physical Vapor Deposition: AHistorical Perspective

Energy Technology Data Exchange (ETDEWEB)

Anders, Andre

2007-02-28

Deposition of films using plasma or plasma-assist can betraced back surprisingly far, namely to the 18th century for arcs and tothe 19th century for sputtering. However, only since the 1960s thecoatings community considered other processes than evaporation for largescale commercial use. Ion Plating was perhaps the first importantprocess, introducing vapor ionization and substrate bias to generate abeam of ions arriving on the surface of the growing film. Ratherindependently, cathodic arc deposition was established as an energeticcondensation process, first in the former Soviet Union in the 1970s, andin the 1980s in the Western Hemisphere. About a dozen various ion-basedcoating technologies evolved in the last decades, all characterized byspecific plasma or ion generation processes. Gridded and gridless ionsources were taken from space propulsion and applied to thin filmdeposition. Modeling and simulation have helped to make plasma and ionseffects to be reasonably well understood. Yet--due to the complex, oftennon-linear and non-equilibrium nature of plasma and surfaceinteractions--there is still a place for the experience plasma"sourcerer."

Substrate Effect on Plasma Clean Efficiency in Plasma Enhanced Chemical Vapor Deposition System

Directory of Open Access Journals (Sweden)

Shiu-Ko JangJian

2007-01-01

Full Text Available The plasma clean in a plasma-enhanced chemical vapor deposition (PECVD system plays an important role to ensure the same chamber condition after numerous film depositions. The periodic and applicable plasma clean in deposition chamber also increases wafer yield due to less defect produced during the deposition process. In this study, the plasma clean rate (PCR of silicon oxide is investigated after the silicon nitride deposited on Cu and silicon oxide substrates by remote plasma system (RPS, respectively. The experimental results show that the PCR drastically decreases with Cu substrate compared to that with silicon oxide substrate after numerous silicon nitride depositions. To understand the substrate effect on PCR, the surface element analysis and bonding configuration are executed by X-ray photoelectron spectroscopy (XPS. The high resolution inductively coupled plasma mass spectrometer (HR-ICP-MS is used to analyze microelement of metal ions on the surface of shower head in the PECVD chamber. According to Cu substrate, the results show that micro Cu ion and the CuOx bonding can be detected on the surface of shower head. The Cu ion contamination might grab the fluorine radicals produced by NF3 ddissociation in the RPS and that induces the drastic decrease on PCR.

Combined ground- and satellite-based profiling of temperature and water vapor

International Nuclear Information System (INIS)

Stankov, B.B.; Westwater, E.R.; Snider, J.B.; Churnside, J.H.

1994-01-01

The fusion or integration of meteorological and radiative data from a range of instrumentation into a representative picture of temperature, water vapor, and clouds over a CART domain will be a challenging task for four-dimensional data assimilation models. In the work reported here, we have summarized work supported by DOE's algorithm development program including combined RASS and TIROS Operational Vertical Sounder (TOVS) temperature sensing, water vapor profiles from dual-channel radiometers, and neural network radiometric temperature retrievals

Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

Science.gov (United States)

Oliveira, M. H.; Viana, G. A.; de Lima, M. M.; Cros, A.; Cantarero, A.; Marques, F. C.

2010-12-01

Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH4) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Oliveira, M. H. Jr.; Viana, G. A.; Marques, F. C.; Lima, M. M. Jr. de; Cros, A.; Cantarero, A.

2010-01-01

Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH 4 ) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

Chemical vapor deposition of TiB2 on graphite

International Nuclear Information System (INIS)

Pierson, H.O.; Randich, E.; Mattox, D.M.

1978-01-01

This study is an experimental investigation of the coating of graphite with TiB 2 by chemical vapor deposition (CVD) using the hydrogen reduction of BCl 3 and TiCl 4 at 925 0 C and 1 atm. Reasonable matching of the thermal expansion of TiB 2 and graphite was necessary to eliminate cracking. A suitable graphite was POCO DFP-1. Adhesion was improved by having a slightly rough graphite surface. Heat treatment at 2000 0 C and above resulted in a certain degree of diffusion. No melting or solid phases other than TiB 2 and graphite were detected up to 2400 0 C. The coatings showed no failure when repeatedly submitted to an electron beam pulse of 2 KW/cm 2 for 0.8 sec

Temperature/pressure and water vapor sounding with microwave spectroscopy

Science.gov (United States)

Muhleman, D. O.; Janssen, M. A.; Clancy, R. T.; Gulkis, S.; Mccleese, D. J.; Zurek, R.; Haberle, R. M.; Frerking, M.

1992-01-01

Two intense microwave spectra lines exist in the martian atmosphere that allow unique sounding capabilities: water vapor at 183 GHz and the (2-1) rotational line of CO at 230 GHz. Microwave spectra line sounding is a well-developed technique for the Earth's atmosphere for sounding from above from spacecraft and airplanes, and from below from fixed surface sites. Two simple instruments for temperature sounding on Mars (the CO line) and water vapor measurements are described. The surface sounder proposed for the MESUR sites is designed to study the boundary layer water vapor distribution and the temperature/pressure profiles with vertical resolution of 0.25 km up to 1 km with reduced resolution above approaching a scale height. The water channel will be sensitive to a few tenths of a micrometer of water and the temperature profile will be retrieved to an accuracy between 1 and 2 K. The latter is routinely done on the Earth using oxygen lines near 60 GHz. The measurements are done with a single-channel heterodyne receiver looking into a 10-cm mirror that is canned through a range of elevation angles plus a target load. The frequency of the receiver is sweep across the water and CO lines generating the two spectra at about 1-hr intervals throughout the mission. The mass and power for the proposed instrument are 2 kg and 5-8 W continuously. The measurements are completely immune to the atmospheric dust and ice particle loads. It was felt that these measurements are the ultimate ones to properly study the martian boundary layer from the surface to a few kilometers. Sounding from above requires an orbiting spacecraft with multichannel microwave spectrometers such as the instrument proposed for MO by a subset of the authors, a putative MESUR orbiter, and a proposed Discovery mission called MOES. Such an instrument can be built with less than 10 kg and use less than 15 W. The obvious advantage of this approach is that the entire atmosphere can be sounded for temperature and

Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars.

Science.gov (United States)

Skibitzki, Oliver; Capellini, Giovanni; Yamamoto, Yuji; Zaumseil, Peter; Schubert, Markus Andreas; Schroeder, Thomas; Ballabio, Andrea; Bergamaschini, Roberto; Salvalaglio, Marco; Miglio, Leo; Montalenti, Francesco

2016-10-05

In this work, we demonstrate the growth of Ge crystals and suspended continuous layers on Si(001) substrates deeply patterned in high aspect-ratio pillars. The material deposition was carried out in a commercial reduced-pressure chemical vapor deposition reactor, thus extending the "vertical-heteroepitaxy" technique developed by using the peculiar low-energy plasma-enhanced chemical vapor deposition reactor, to widely available epitaxial tools. The growth process was thoroughly analyzed, from the formation of small initial seeds to the final coalescence into a continuous suspended layer, by means of scanning and transmission electron microscopy, X-ray diffraction, and μ-Raman spectroscopy. The preoxidation of the Si pillar sidewalls and the addition of hydrochloric gas in the reactants proved to be key to achieve highly selective Ge growth on the pillars top only, which, in turn, is needed to promote the formation of a continuous Ge layer. Thanks to continuum growth models, we were able to single out the different roles played by thermodynamics and kinetics in the deposition dynamics. We believe that our findings will open the way to the low-cost realization of tens of micrometers thick heteroepitaxial layer (e.g., Ge, SiC, and GaAs) on Si having high crystal quality.

Photoluminescence properties of poly (p-phenylene vinylene) films deposited by chemical vapor deposition

International Nuclear Information System (INIS)

Gedelian, Cynthia A.; Rajanna, K.C.; Premerlani, Brian; Lu, Toh-Ming

2014-01-01

Photoluminescence spectra of PPV at varying thicknesses and temperatures have been studied. A study of the quenching of the polymer film using a modified version of fluorescence spectroscopy reveals interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. The application of the Stern–Volmer equation to solid film is discussed. Stern–Volmer plots were nonlinear with downward deviations at higher thickness of the film which was explained due to self-quenching in films and larger conformational change and increased restriction from change in electron density due to electron transition during excitation in bulk polymer films over 60 nm thick. PPV deposited into porous (∼4 nm in diameter) nanostructured substrate shows a larger 0–0 than 0–1 transition peak intensity and decreased disorder in the films due to structure imposed by substrate matrix. Temperature dependent effects are measured for a film at 500 Å, right on the border between the two areas. PPV films deposited on porous methyl silsesquioxane (MSQ) were also examined in order to compare the flat film to a substrate that allows for the domination of interface effects. The enthalpies of the first two peaks are very similar, but the third peak demonstrates a lower enthalpy and a larger wavelength shift with temperature. Films deposited inside pores show a smaller amount of disorder than flat films. Calculation of the Huang–Rhys factor at varying temperatures for the flat film and film in porous MSQ shows large temperature dependence for the flat film but a smaller amount of disorder in the nanostructured film. -- Highlights: • Poly (p-phenylene vinylene) films deposited by chemical vapor deposition exhibited photoluminescence properties. • Fluorescence spectra of the polymer films revealed interface effects dominating at thicknesses below about 600 Å, while bulk effects dominate at higher thicknesses. • Stern–Volmer plots were

Calibration of Raman lidar water vapor profiles by means of AERONET photometer observations and GDAS meteorological data

Science.gov (United States)

Dai, Guangyao; Althausen, Dietrich; Hofer, Julian; Engelmann, Ronny; Seifert, Patric; Bühl, Johannes; Mamouri, Rodanthi-Elisavet; Wu, Songhua; Ansmann, Albert

2018-05-01

We present a practical method to continuously calibrate Raman lidar observations of water vapor mixing ratio profiles. The water vapor profile measured with the multiwavelength polarization Raman lidar class="text">PollyXT is calibrated by means of co-located AErosol RObotic NETwork (AERONET) sun photometer observations and Global Data Assimilation System (GDAS) temperature and pressure profiles. This method is applied to lidar observations conducted during the Cyprus Cloud Aerosol and Rain Experiment (CyCARE) in Limassol, Cyprus. We use the GDAS temperature and pressure profiles to retrieve the water vapor density. In the next step, the precipitable water vapor from the lidar observations is used for the calibration of the lidar measurements with the sun photometer measurements. The retrieved calibrated water vapor mixing ratio from the lidar measurements has a relative uncertainty of 11 % in which the error is mainly caused by the error of the sun photometer measurements. During CyCARE, nine measurement cases with cloud-free and stable meteorological conditions are selected to calculate the precipitable water vapor from the lidar and the sun photometer observations. The ratio of these two precipitable water vapor values yields the water vapor calibration constant. The calibration constant for the class="text">PollyXT Raman lidar is 6.56 g kg-1 ± 0.72 g kg-1 (with a statistical uncertainty of 0.08 g kg-1 and an instrumental uncertainty of 0.72 g kg-1). To check the quality of the water vapor calibration, the water vapor mixing ratio profiles from the simultaneous nighttime observations with Raman lidar and Vaisala radiosonde sounding are compared. The correlation of the water vapor mixing ratios from these two instruments is determined by using all of the 19 simultaneous nighttime measurements during CyCARE. Excellent agreement with the slope of 1.01 and the R2 of 0.99 is found. One example is presented to demonstrate the full potential of a well-calibrated Raman

Influence of the catalyst type on the growth of carbon nanotubes via methane chemical vapor deposition

NARCIS (Netherlands)

Jodin, Lucie; Dupuis, Anne-Claire; Rouvière, Emmanuelle; Reiss, Peter

2006-01-01

The preparation of the catalyst is one of the key parameters which governs the quality of carbon nanotubes (CNTs) grown by catalyzed chemical vapor deposition (CVD). We investigated the influence of three different procedures of catalyst preparation on the type and diameter of CNTs formed under

Relating tropical ocean clouds to moist processes using water vapor isotope measurements

Directory of Open Access Journals (Sweden)

J. Lee

2011-01-01

Full Text Available We examine the co-variations of tropospheric water vapor, its isotopic composition and cloud types and relate these distributions to tropospheric mixing and distillation models using satellite observations from the Aura Tropospheric Emission Spectrometer (TES over the summertime tropical ocean. Interpretation of these process distributions must take into account the sensitivity of the TES isotope and water vapor measurements to variations in cloud, water, and temperature amount. Consequently, comparisons are made between cloud-types based on the International Satellite Cloud Climatology Project (ISSCP classification; these are clear sky, non-precipitating (e.g., cumulus, boundary layer (e.g., stratocumulus, and precipitating clouds (e.g. regions of deep convection. In general, we find that the free tropospheric vapor over tropical oceans does not strictly follow a Rayleigh model in which air parcels become dry and isotopically depleted through condensation. Instead, mixing processes related to convection as well as subsidence, and re-evaporation of rainfall associated with organized deep convection all play significant roles in controlling the water vapor distribution. The relative role of these moisture processes are examined for different tropical oceanic regions.

Evaluating Global Aerosol Models and Aerosol and Water Vapor Properties Near Clouds

Energy Technology Data Exchange (ETDEWEB)

Turner, David, D.; Ferrare, Richard, A.

2011-07-06

The 'Evaluating Global Aerosol Models and Aerosol and Water Vapor Properties Near Clouds' project focused extensively on the analysis and utilization of water vapor and aerosol profiles derived from the ARM Raman lidar at the Southern Great Plains ARM site. A wide range of different tasks were performed during this project, all of which improved quality of the data products derived from the lidar or advanced the understanding of atmospheric processes over the site. These activities included: upgrading the Raman lidar to improve its sensitivity; participating in field experiments to validate the lidar aerosol and water vapor retrievals; using the lidar aerosol profiles to evaluate the accuracy of the vertical distribution of aerosols in global aerosol model simulations; examining the correlation between relative humidity and aerosol extinction, and how these change, due to horizontal distance away from cumulus clouds; inferring boundary layer turbulence structure in convective boundary layers from the high-time-resolution lidar water vapor measurements; retrieving cumulus entrainment rates in boundary layer cumulus clouds; and participating in a field experiment that provided data to help validate both the entrainment rate retrievals and the turbulent profiles derived from lidar observations.

SPADE H2O measurements and the seasonal cycle of statospheric water vapor

Science.gov (United States)

Hintsa, Eric J.; Weinstock, Elliot M.; Dessler, Andrew E.; Anderson, James G.; Loewenstein, Max; Podolske, James R.

1994-01-01

We present measurements of lower statospheric water vapor obtained during the Stratospheric Phototchemistry, Aerosols and Dynamics Expedition (SPADE) mission with a new high precision, fast response, Lyman-alpha hygrometer. The H2O data show a distinct seasonal cycle. For air that recently entered the statosphere, data collected during the fall show much more water vapor than data from the spring. Fast quasi-horizontal mixing causes compact relationships between water and N2O to be established on relatively short time scales. The measurements are consistent with horizontal mixing times of a few months or less. Vertical mixing appears to cause the seasonal variations in water vapor to propagate up to levels corresponding to air that has been in the stratosphere approximately one year.

One-dimensional surface-imprinted polymeric nanotubes for specific biorecognition by initiated chemical vapor deposition (iCVD).

Science.gov (United States)

Ince, Gozde Ozaydin; Armagan, Efe; Erdogan, Hakan; Buyukserin, Fatih; Uzun, Lokman; Demirel, Gokhan

2013-07-24

Molecular imprinting is a powerful, generic, and cost-effective technique; however, challenges still remain related to the fabrication and development of these systems involving nonhomogeneous binding sites, insufficient template removing, incompatibility with aqueous media, low rebinding capacity, and slow mass transfer. The vapor-phase deposition of polymers is a unique technique because of the conformal nature of coating and offers new possibilities in a number of applications including sensors, microfluidics, coating, and bioaffinity platforms. Herein, we demonstrated a simple but versatile concept to generate one-dimensional surface-imprinted polymeric nanotubes within anodic aluminum oxide (AAO) membranes based on initiated chemical vapor deposition (iCVD) technique for biorecognition of immunoglobulin G (IgG). It is reported that the fabricated surface-imprinted nanotubes showed high binding capacity and significant specific recognition ability toward target molecules compared with the nonimprinted forms. Given its simplicity and universality, the iCVD method can offer new possibilities in the field of molecular imprinting.

Water vapor spectroscopy in the 815-nm wavelength region for Differential Absorption Lidar measurements

Science.gov (United States)

Ponsardin, Patrick; Browell, Edward V.

1995-01-01

The differential absorption lidar (DIAL) technique was first applied to the remote measurement of atmospheric water vapor profiles from airborne platforms in 1981. The successful interpretation of the lidar profiles relies strongly on an accurate knowledge of specific water vapor absorption line parameters: line strength, pressure broadening coefficient, pressure-induced shift coefficient and the respective temperature-dependence factors. NASA Langley Research Center has developed and is currently testing an autonomous airborne water vapor lidar system: LASE (Lidar Atmospheric Sensing Experiment). This DIAL system uses a Nd:YAG-pumped Ti:Sapphire laser seeded by a diode laser as a lidar transmitter. The tunable diode has been selected to operate in the 813-818 nm wavelength region. This 5-nm spectral interval offers a large distribution of strengths for temperature-insensitive water vapor absorption lines. In support of the LASE project, a series of spectroscopic measurements were conducted for the 16 absorption lines that have been identified for use in the LASE measurements. Prior to this work, the experimental data for this water vapor absorption band were limited - to our knowledge - to the line strengths and to the line positions.

Room-temperature synthesis of ultraviolet-emitting nanocrystalline GaN films using photochemical vapor deposition

International Nuclear Information System (INIS)

Yamazaki, Shunsuke; Yatsui, Takashi; Ohtsu, Motoichi; Kim, Taw-Won; Fujioka, Hiroshi

2004-01-01

We fabricated UV-emitting nanocrystalline gallium nitride (GaN) films at room temperature using photochemical vapor deposition (PCVD). For the samples synthesized at room temperature with V/III ratios exceeding 5.0x10 4 , strong photoluminescence peaks at 3.365 and 3.310 eV, which can be ascribed to transitions in a mixed phase of cubic and hexagonal GaN, were observed at 5 K. A UV emission spectrum with a full width at half-maximum of 100 meV was observed, even at room temperature. In addition, x-ray photoelectron spectroscopy measurement revealed that the film deposited by PCVD at room temperature was well nitridized

Optimization of silicon oxynitrides by plasma-enhanced chemical vapor deposition for an interferometric biosensor

Science.gov (United States)

Choo, Sung Joong; Lee, Byung-Chul; Lee, Sang-Myung; Park, Jung Ho; Shin, Hyun-Joon

2009-09-01

In this paper, silicon oxynitride layers deposited with different plasma-enhanced chemical vapor deposition (PECVD) conditions were fabricated and optimized, in order to make an interferometric sensor for detecting biochemical reactions. For the optimization of PECVD silicon oxynitride layers, the influence of the N2O/SiH4 gas flow ratio was investigated. RF power in the PEVCD process was also adjusted under the optimized N2O/SiH4 gas flow ratio. The optimized silicon oxynitride layer was deposited with 15 W in chamber under 25/150 sccm of N2O/SiH4 gas flow rates. The clad layer was deposited with 20 W in chamber under 400/150 sccm of N2O/SiH4 gas flow condition. An integrated Mach-Zehnder interferometric biosensor based on optical waveguide technology was fabricated under the optimized PECVD conditions. The adsorption reaction between bovine serum albumin (BSA) and the silicon oxynitride surface was performed and verified with this device.

Assessment of water vapor content from MIVIS TIR data

Directory of Open Access Journals (Sweden)

V. Tramutoli

2006-06-01

Full Text Available The main objective of land remotely sensed images is to derive biological, chemical and physical parameters by inverting sample sets of spectral data. For the above aim hyperspectral scanners on airborne platform are a powerful remote sensing instrument for both research and environmental applications because of their spectral resolution and the high operability of the platform. Fine spectral information by MIVIS (airborne hyperspectral scanner operating in 102 channels ranging from VIS to TIR allows researchers to characterize atmospheric parameters and their effects on measured data which produce undesirable features on surface spectral signatures. These effects can be estimated (and remotely sensed radiances corrected if atmospheric spectral transmittance is known at each image pixel. Usually ground-based punctual observations (atmospheric sounding balloons, sun photometers, etc. are used to estimate the main physical parameters (like water vapor and temperature profiles which permit us to estimate atmospheric spectral transmittance by using suitable radiative transfer model and a specific (often too strong assumption which enable atmospheric properties measured only in very few points to be extended to the whole image. Several atmospheric gases produce observable absorption features, but only water vapor strongly varies in time and space. In this work the authors customize a self-sufficient «split-window technique» to derive (at each image pixel atmospheric total columnar water vapor content (TWVC using only MIVIS data collected by the fourth MIVIS spectrometer (Thermal Infrared band. MIVIS radiances have been simulated by means of MODTRAN4 radiative transfer code and the coefficients of linear regression to estimate TWVC from «split-windows» MIVIS radiances, based on 450 atmospheric water vapor profiles obtained by radiosonde data provided by NOAANESDIS. The method has been applied to produce maps describing the spatial variability of

Photocured epoxy/graphene nanocomposites with enhanced water vapor barrier properties

Science.gov (United States)

Periolatto, M.; Sangermano, M.; Spena, P. Russo

2016-05-01

A transparent, water vapor barrier film made of an epoxy resin and graphene oxide (GO) was synthesized by photopolymerization process. The epoxy/GO film with just 0.05 wt% GO gives a 93% WVTR reduction with respect to the pristine polymer, reaching barrier properties better than other polymer composites containing higher amounts of graphene. The excellent water vapor barrier is attributed to the good dispersion of GO in the polymer matrix. Moreover, GO significantly enhances the toughness and the damping capacity of the epoxy resins. The hybrid film can have potential applications in anticorrosive coatings, electronic devices, pharmaceuticals and food packaging.

Photocured epoxy/graphene nanocomposites with enhanced water vapor barrier properties

Energy Technology Data Exchange (ETDEWEB)

Periolatto, M.; Spena, P. Russo [Faculty of Science and Technology, Free University of Bozen-Bolzano, Piazza Università 5, Bolzano (Italy); Sangermano, M. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, C.so Duca degli Abruzzi 24, Torino (Italy)

2016-05-18

A transparent, water vapor barrier film made of an epoxy resin and graphene oxide (GO) was synthesized by photopolymerization process. The epoxy/GO film with just 0.05 wt% GO gives a 93% WVTR reduction with respect to the pristine polymer, reaching barrier properties better than other polymer composites containing higher amounts of graphene. The excellent water vapor barrier is attributed to the good dispersion of GO in the polymer matrix. Moreover, GO significantly enhances the toughness and the damping capacity of the epoxy resins. The hybrid film can have potential applications in anticorrosive coatings, electronic devices, pharmaceuticals and food packaging.

Photocured epoxy/graphene nanocomposites with enhanced water vapor barrier properties

International Nuclear Information System (INIS)

Periolatto, M.; Spena, P. Russo; Sangermano, M.

2016-01-01

A transparent, water vapor barrier film made of an epoxy resin and graphene oxide (GO) was synthesized by photopolymerization process. The epoxy/GO film with just 0.05 wt% GO gives a 93% WVTR reduction with respect to the pristine polymer, reaching barrier properties better than other polymer composites containing higher amounts of graphene. The excellent water vapor barrier is attributed to the good dispersion of GO in the polymer matrix. Moreover, GO significantly enhances the toughness and the damping capacity of the epoxy resins. The hybrid film can have potential applications in anticorrosive coatings, electronic devices, pharmaceuticals and food packaging.

Growth of graphene underlayers by chemical vapor deposition

International Nuclear Information System (INIS)

Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu; Charlie Johnson, A. T.

2013-01-01

We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth

Deposition of controllable preferred orientation silicon films on glass by inductively coupled plasma chemical vapor deposition

International Nuclear Information System (INIS)

Li Junshuai; Wang Jinxiao; Yin Min; Gao Pingqi; He Deyan; Chen Qiang; Li Yali; Shirai, Hajime

2008-01-01

An inductively coupled plasma (ICP) system with the adjustable distance between the inductance coil and substrates was designed to effectively utilize the spatial confinement of ICP discharge, and then control the gas-phase transport process. The effects of the gas phase processes on the crystallinity and preferred orientation of silicon films deposited on glass were systematically investigated. The investigation was conducted in the ICP-chemical vapor deposition process with the precursor gas of a SiH 4 /H 2 mixture at a substrate temperature of 350 deg. Highly crystallized silicon films with different preferred orientations, (111) or (220), could be selectively deposited by adjusting the SiH 4 dilution ratio [R=[SiH 4 ]/([SiH 4 ]+[H 2 ])] or total working pressure. When the total working pressure is 20 Pa, the crystallinity of the silicon films increases with the increase of the SiH 4 dilution ratio, while the preferred orientation was changed from (111) to (220). In the case of the fixed SiH 4 dilution (10%), the silicon film with I (220) /I (111) of about 3.5 and Raman crystalline fraction of about 89.6% has been deposited at 29.7 nm/min when the total working pressure was increased to 40 Pa. At the fixed SiH 4 partial pressure of 2 Pa, the film crystallinity decreases and the preferred orientation is always (111) with increasing the H 2 partial pressure from 18 to 58 Pa. Atomic force microscope reveals that the film deposited at a relatively high H 2 partial pressure has a very rough surface caused by the devastating etching of H atoms to the silicon network

Reflectance degradation of a secondary concentrator by nitrate salt vapor deposition in an open volumetric receiver configuration

Science.gov (United States)

Lahlou, Radia; Armstrong, Peter R.; Calvet, Nicolas; Shamim, Tariq

2017-06-01

Nitrate salt vapor deposition on the reflecting surface of a secondary concentrator placed on top of an open molten salt tank at 500 °C is investigated using a lab-scale setup over an 8h-exposure cycle. Deposition, consisting of mostly spherical particles, is characterized in terms of chemical composition using energy dispersive X-ray spectroscopy. The corresponding specular reflectance degradation both temporary (before washing off the salt deposits) and permanent (residual reflectance loss after cleaning), is measured at different incidence angles and at reference points located at different heights. Reflectance drop due to salt deposits is compared to the one resulting from dust deposition. Long-term reflectance degradation by means of corrosion needs to be further studied through suitable accelerated aging tests.

Chemical vapor deposition of NiSi using Ni(PF3)4 and Si3H8

International Nuclear Information System (INIS)

Ishikawa, M.; Muramoto, I.; Machida, H.; Imai, S.; Ogura, A.; Ohshita, Y.

2007-01-01

NiSi x films were deposited using chemical vapor deposition (CVD) with a Ni(PF 3 ) 4 and Si 3 H 8 /H 2 gas system. The step coverage quality of deposited NiSi x was investigated using a horizontal type of hot-wall low pressure CVD reactor, which maintained a constant temperature throughout the deposition area. The step coverage quality improved as a function of the position of the gas flow direction, where PF 3 gas from decomposition of Ni(PF 3 ) 4 increased. By injecting PF 3 gas into the Ni(PF 3 ) 4 and Si 3 H 8 /H 2 gas system, the step coverage quality markedly improved. This improvement in step coverage quality naturally occurred when PF 3 gas was present, indicating a strong relationship. The Si/Ni deposit ratio at 250 deg. C is larger than at 180 deg. C. It caused a decreasing relative deposition rate of Ni to Si. PF 3 molecules appear to be adsorbed on the surface of the deposited film and interfere with faster deposition of active Ni deposition species

An efficient fabrication of vertically aligned carbon nanotubes on flexible aluminum foils by catalyst-supported chemical vapor deposition

International Nuclear Information System (INIS)

Yoshikawa, Naoki; Kishi, Naoki; Sugai, Toshiki; Shinohara, Hisanori; Asari, Takuma; Hayashi, Shigeo

2008-01-01

An efficient and versatile growth of thin-layer carbon nanotubes on a flexible aluminum foil (for kitchen use) by catalyst-supported chemical vapor deposition is reported. The aluminum foil used in the present experiment is commercially available for kitchen use. The electron-beam vapor deposition and dip-coating have been used for preparing catalysts on the aluminum foil. Vertically aligned thin-layer CNTs with typical diameters of 2.5-6.0 nm and lengths up to 90 μm are obtained when ethanol is used in combination with Fe and Co catalyst particles at a growth temperature of around 650 deg. C under an Ar/H 2 gas flow. Thermo-gravimetric analyses together with HR-TEM observations indicate that the purity of the CNTs synthesized by the current technique is very high

Volatilized tritiated water vapor in the vicinity of exposed tritium contaminated groundwater

International Nuclear Information System (INIS)

Dunn, D.L.; Carlton, B.; Hunter, C.; McAdams, T.

1994-01-01

Water vapor tritium concentrations in air above a known source of tritiated water can be estimated. Estimates should account for the mechanisms of evaporation and condensation at the water surface and water species exchange, and are typically applicable under a broad range of wind, temperature and humidity conditions. An estimate of volatilized tritium water vapor was made for a known outcropping of tritium contaminated groundwater at the Savannah River Site (SRS) old F-Area effluent stream. In order to validate this estimate and the associated dose calculation, sampling equipment was fabricated, tested, and installed at the effluent stream. The estimate and the dose calculation were confirmed using data from samples collected

Human serum albumin (HSA) adsorption onto a-SiC:H thin films deposited by hot wire chemical vapor deposition

International Nuclear Information System (INIS)

Swain, Bibhu P.

2006-01-01

In the present paper, we report the study of the adsorption behavior of human serum albumin (HSA) onto surfaces of a-SiC:H thin films deposited by using the hot wire chemical vapor deposition (HWCVD) technique. The surface composition and surface energy of the various substrates as well as the evaluation of the adsorbed amount of protein has been carried out by means of X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy, AFM and contact angle measurements. At the immediate effect of HSA interaction with a-SiC:H films N is adsorbed on the surface and stabilized after 3 days. Preliminary observation found that Si and O atom are desorbed from the surface while C and N set adsorbed to the surface of the a-SiC:H film

Human serum albumin (HSA) adsorption onto a-SiC:H thin films deposited by hot wire chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Swain, Bibhu P. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Bombay (India) and Samtel Centre for Display Technologies, Indian Institute of Technology Kanpur, India, Kanpur 208016 (India)]. E-mail: bibhup@iitb.ac.in

2006-12-15

In the present paper, we report the study of the adsorption behavior of human serum albumin (HSA) onto surfaces of a-SiC:H thin films deposited by using the hot wire chemical vapor deposition (HWCVD) technique. The surface composition and surface energy of the various substrates as well as the evaluation of the adsorbed amount of protein has been carried out by means of X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy, AFM and contact angle measurements. At the immediate effect of HSA interaction with a-SiC:H films N is adsorbed on the surface and stabilized after 3 days. Preliminary observation found that Si and O atom are desorbed from the surface while C and N set adsorbed to the surface of the a-SiC:H film.

SEPARATION OF WATER VAPORS FROM AIR BY SORPTION ON SOME COMPOSITE MATERIALS

Directory of Open Access Journals (Sweden)

OANA HAUTĂ

2014-01-01

Full Text Available This work presents an experimental investigation of the kinetics of water vapor sorption on two composites synthesized by impregnating activated carbon and activated alumina respectively with lithium bromide (named as MCA2 and MCC2 respectively. The obtained results showed an increase in water amount adsorbed on both composite materials. Due to different chemical natures of the host matrices, the water sorption kinetics on MCC2 is faster compared to that of MCA2. The presence of calcium chloride instead of lithium bromide in alumina pores will determine a shorter breakthrough time and a higher adsorption rate of water vapors.

A Water Vapor Differential Absorption LIDAR Design for Unpiloted Aerial Vehicles

Science.gov (United States)

DeYoung, Russell J.; Mead, Patricia F.

2004-01-01

This system study proposes the deployment of a water vapor Differential Absorption LIDAR (DIAL) system on an Altair unmanned aerial vehicle (UAV) platform. The Altair offers improved payload weight and volume performance, and longer total flight time as compared to other commercial UAV's. This study has generated a preliminary design for an Altair based water vapor DIAL system. The design includes a proposed DIAL schematic, a review of mechanical challenges such as temperature and humidity stresses on UAV deployed DIAL systems, an assessment of the available capacity for additional instrumentation (based on the proposed design), and an overview of possible weight and volume improvements associated with the use of customized electronic and computer hardware, and through the integration of advanced fiber-optic and laser products. The results of the study show that less than 17% of the available weight, less than 19% of the volume capacity, and approximately 11% of the electrical capacity is utilized by the proposed water vapor DIAL system on the Altair UAV.

Properties of amorphous silicon thin films synthesized by reactive particle beam assisted chemical vapor deposition

International Nuclear Information System (INIS)

Choi, Sun Gyu; Wang, Seok-Joo; Park, Hyeong-Ho; Jang, Jin-Nyoung; Hong, MunPyo; Kwon, Kwang-Ho; Park, Hyung-Ho

2010-01-01

Amorphous silicon thin films were formed by chemical vapor deposition of reactive particle beam assisted inductively coupled plasma type with various reflector bias voltages. During the deposition, the substrate was heated at 150 o C. The effects of reflector bias voltage on the physical and chemical properties of the films were systematically studied. X-ray diffraction and Raman spectroscopy results showed that the deposited films were amorphous and the films under higher reflector voltage had higher internal energy to be easily crystallized. The chemical state of amorphous silicon films was revealed as metallic bonding of Si atoms by using X-ray photoelectron spectroscopy. An increase in reflector voltage induced an increase of surface morphology of films and optical bandgap and a decrease of photoconductivity.

Fabrication and characterization of a cell electrostimulator device combining physical vapor deposition and laser ablation

Science.gov (United States)

Aragón, Angel L.; Pérez, Eliseo; Pazos, Antonio; Bao-Varela, Carmen; Nieto, Daniel

2017-08-01

In this work we present the process of fabrication and optimization of a prototype of a cell electrostimulator device for medical application combining physical vapor deposition and laser ablation. The fabrication of the first prototype begins with a deposition of a thin layer of 200 nm of aluminium on a borosilicate glass substrate using physical vapor deposition (PVD). In the second stage the geometry design of the electrostimulator is made in a CAD-like software available in a Nd:YVO4 Rofin Power line 20E, operating at the fundamental wavelength of 1064 nm and 20 ns pulse width. Choosing the proper laser parameters the negative of the electrostimulator desing is ablated. After that the glass is assembled between two polycarbonate sheets and a thick sheet of polydimethylsiloxane (PDMS). The PDMS sheet has a round hole in where cells are placed. There is also included a thin soda-lime silicate glass (100 μm) between the electrostimulator and the PMDS to prevent the cells for being in contact with the electric circuit. In order to control the electrical signal applied to the electrostimulator is used a digital I/O device from National Instruments (USB-6501) which provides 5 V at the output monitored by a software programmed in LabVIEW. Finally, the optical and electrical characterization of the cell electrostimulator device is presented.

Ionized physical vapor deposition (IPVD): A review of technology and applications

International Nuclear Information System (INIS)

Helmersson, Ulf; Lattemann, Martina; Bohlmark, Johan; Ehiasarian, Arutiun P.; Gudmundsson, Jon Tomas

2006-01-01

In plasma-based deposition processing, the importance of low-energy ion bombardment during thin film growth can hardly be exaggerated. Ion bombardment is an important physical tool available to materials scientists in the design of new materials and new structures. Glow discharges and in particular, the magnetron sputtering discharge have the advantage that the ions of the discharge are abundantly available to the deposition process. However, the ion chemistry is usually dominated by the ions of the inert sputtering gas while ions of the sputtered material are rare. Over the last few years, various ionized sputtering techniques have appeared that can achieve a high degree of ionization of the sputtered atoms, often up to 50% but in some cases as much as approximately 90%. This opens a complete new perspective in the engineering and design of new thin film materials. The development and application of magnetron sputtering systems for ionized physical vapor deposition (IPVD) is reviewed. The application of a secondary discharge, inductively coupled plasma magnetron sputtering (ICP-MS) and microwave amplified magnetron sputtering, is discussed as well as the high power impulse magnetron sputtering (HIPIMS), the self-sustained sputtering (SSS) magnetron, and the hollow cathode magnetron (HCM) sputtering discharges. Furthermore, filtered arc-deposition is discussed due to its importance as an IPVD technique. Examples of the importance of the IPVD-techniques for growth of thin films with improved adhesion, improved microstructures, improved coverage of complex shaped substrates, and increased reactivity with higher deposition rate in reactive processes are reviewed

Airborne Observations of Water Vapor Deuterium Excess in the Mid-Latitude Lower Troposphere

Science.gov (United States)

Salmon, O. E.; Welp, L.; Shepson, P. B.; Stirm, B. H.

2017-12-01

Water vapor is responsible for over half of the natural atmospheric greenhouse effect. As global temperatures increase due to fossil fuel combustion, atmospheric water vapor concentrations are also expected to increase in positive feedback. Additionally, studies have shown that urban areas can influence humidity levels, and the frequency and intensity of precipitation events. It is thus important to understand anthropogenic modification of the hydrological cycle, particularly around urban areas, where over half of the world's population resides. Airborne measurements of water vapor isotopologues containing 2H and 18O were conducted to better understand processes influencing atmospheric moisture levels around urban areas. Airborne measurements were conducted around the Indianapolis and Washington, D.C.-Baltimore areas during afternoon hours in February and March 2016, using a Los Gatos Research Water Vapor Isotope Analyzer installed in Purdue University's experimental aircraft, the Airborne Laboratory for Atmospheric Research. The measurements of 2H and 18O allow for the calculation of deuterium excess (= δ2H - 8*δ18O), which provides information about non-equilibrium processes, such as kinetic effects, air parcel mixing, and transpiration. There are few studies that have reported observations of deuterium excess above the surface level ( 100 m). During the measurement campaign, vertical profiles were frequently conducted from 300 m above the ground to an altitude of approximately 1.5 km, effectively characterizing water vapor isotope profiles spanning the boundary layer and lower free troposphere. Measurements probed the transition from planetary boundary layer air to free troposphere air to provide high resolution deuterium excess information across this interface. Processes such as Rayleigh distillation, atmospheric mixing, and surface fluxes potentially impacting water vapor deuterium excess through the boundary layer and free troposphere with be discussed.

Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition

NARCIS (Netherlands)

Saeed, S.; Buters, F.; Dohnalova, K.; Wosinski, L.; Gregorkiewicz, T.

2014-01-01

We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO2. Optical characterization

Stability limit of liquid water in metastable equilibrium with subsaturated vapors.

Science.gov (United States)

Wheeler, Tobias D; Stroock, Abraham D

2009-07-07

A pure liquid can reach metastable equilibrium with its subsaturated vapor across an appropriate membrane. This situation is analogous to osmotic equilibrium: the reduced chemical potential of the dilute phase (the subsaturated vapor) is compensated by a difference in pressure between the phases. To equilibrate with subsaturated vapor, the liquid phase assumes a pressure that is lower than its standard vapor pressure, such that the liquid phase is metastable with respect to the vapor phase. For sufficiently subsaturated vapors, the liquid phase can even assume negative pressures. The appropriate membrane for this metastable equilibrium must provide the necessary mechanical support to sustain the difference in pressure between the two phases, limit nonhomogeneous mechanisms of cavitation, and resist the entry of the dilutant (gases) into the pure phase (liquid). In this article, we present a study of the limit of stability of liquid water--the degree of subsaturation at which the liquid cavitates--in this metastable state within microscale voids embedded in hydrogel membranes. We refer to these structures as vapor-coupled voids (VCVs). In these VCVs, we observed that liquid water cavitated when placed in equilibrium with vapors of activity aw,vapairhumiditynucleation theory or molecular simulations (Pcav=-140 to -180 MPa). To determine the cause of the disparity between the observed and predicted stability limit, we examine experimentally the likelihood of several nonhomogeneous mechanisms of nucleation: (i) heterogeneous nucleation caused by hydrophobic patches on void walls, (ii) nucleation caused by the presence of dissolved solute, (iii) nucleation caused by the presence of pre-existing vapor nuclei, and (iv) invasion of air through the hydrogel membrane into the voids. We conclude that, of these possibilities, (i) and (ii) cannot be discounted, whereas (iii) and (iv) are unlikely to play a role in determining the stability limit.

Formation of {beta}-FeSi{sub 2} thin films by partially ionized vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Harada, Noriyuki; Takai, Hiroshi

2003-05-01

The partially ionized vapor deposition (PIVD) is proposed as a new method to realize low temperature formation of {beta}-FeSi{sub 2} thin films. In this method, Fe is evaporated by E-gun and a few percents of Fe atoms are ionized. We have investigated influences of the ion content and the accelerating voltage of Fe ions on the structural properties of {beta}-FeSi{sub 2} films deposited on Si substrates. It was confirmed that {beta}-FeSi{sub 2} can be formed on Si(1 0 0) substrate by PIVD even at substrate temperature as low as 350, while FeSi by the conventional vacuum deposition. It was concluded that the influence of Fe ions on preferential orientation of {beta}-FeSi{sub 2} depends strongly on the content and the acceleration energy of ions.

Climatic Analysis of Oceanic Water Vapor Transports Based on Satellite E-P Datasets

Science.gov (United States)

Smith, Eric A.; Sohn, Byung-Ju; Mehta, Vikram

2004-01-01

Understanding the climatically varying properties of water vapor transports from a robust observational perspective is an essential step in calibrating climate models. This is tantamount to measuring year-to-year changes of monthly- or seasonally-averaged, divergent water vapor transport distributions. This cannot be done effectively with conventional radiosonde data over ocean regions where sounding data are generally sparse. This talk describes how a methodology designed to derive atmospheric water vapor transports over the world oceans from satellite-retrieved precipitation (P) and evaporation (E) datasets circumvents the problem of inadequate sampling. Ultimately, the method is intended to take advantage of the relatively complete and consistent coverage, as well as continuity in sampling, associated with E and P datasets obtained from satellite measurements. Independent P and E retrievals from Special Sensor Microwave Imager (SSM/I) measurements, along with P retrievals from Tropical Rainfall Measuring Mission (TRMM) measurements, are used to obtain transports by solving a potential function for the divergence of water vapor transport as balanced by large scale E - P conditions.

Direct Fabrication of Carbon Nanotubes STM Tips by Liquid Catalyst-Assisted Microwave Plasma-Enhanced Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Fa-Kuei Tung

2009-01-01

Full Text Available Direct and facile method to make carbon nanotube (CNT tips for scanning tunneling microscopy (STM is presented. Cobalt (Co particles, as catalysts, are electrochemically deposited on the apex of tungsten (W STM tip for CNT growth. It is found that the quantity of Co particles is well controlled by applied DC voltage, concentration of catalyst solution, and deposition time. Using optimum growth condition, CNTs are successfully synthesized on the tip apex by catalyst-assisted microwave-enhanced chemical vapor deposition (CA-MPECVD. A HOPG surface is clearly observed at an atomic scale using the present CNT-STM tip.

Effects of convective ice evaporation on interannual variability of tropical tropopause layer water vapor

Science.gov (United States)

Ye, Hao; Dessler, Andrew E.; Yu, Wandi

2018-04-01

Water vapor interannual variability in the tropical tropopause layer (TTL) is investigated using satellite observations and model simulations. We break down the influences of the Brewer-Dobson circulation (BDC), the quasi-biennial oscillation (QBO), and the tropospheric temperature (ΔT) on TTL water vapor as a function of latitude and longitude using a two-dimensional multivariate linear regression. This allows us to examine the spatial distribution of the impact of each process on TTL water vapor. In agreement with expectations, we find that the impacts from the BDC and QBO act on TTL water vapor by changing TTL temperature. For ΔT, we find that TTL temperatures alone cannot explain the influence. We hypothesize a moistening role for the evaporation of convective ice from increased deep convection as the troposphere warms. Tests using a chemistry-climate model, the Goddard Earth Observing System Chemistry Climate Model (GEOSCCM), support this hypothesis.

Improved lifetime of chitosan film in converting water vapor to electrical power by adding carboxymethyl cellulose

Science.gov (United States)

Nasution, T. I.; Balyan, M.; Nainggolan, I.

2018-02-01

A Water vapor cell based on chitosan film has been successfully fabricated in film form to convert water vapor to electrical power. In order to improve the lifetime of water vapor cell, Carboxymethyl Cellulose (CMC) was added into 1% chitosan solution within concentration variations of 0.01, 0.05, 0.1 and 0.5%. The result showed that the lifetime of water vapor cell increased higher by adding the higher concentration of Carboxymethyl cellulose. The highest lifetime was evidenced by adding 0.5%CMC which maintained for 48 weeks. However, the average electrical power became lower to 4.621 µW. This electrical power lower than the addition of 0.1%CMC which maintained for 5.167 µW. While, the lifetime of chitosan-0.1%CMC film of 44 weeks is shorter compared to chitosan-0.5%CMC film. Based on FTIR characterization, it was founded that the chitosan structure did not change until the addition of 0.1%CMC. This caused the electrical power of water vapor cell degenerated. Therefore, chitosan-0.5%CMC film has excellent lifetime in converting water vapor to electrical power.

Calculational model for condensation of water vapor during an underground nuclear detonation

International Nuclear Information System (INIS)

Knox, R.J.

1975-01-01

An empirally derived mathematical model was developed to calculate the pressure and temperature history during condensation of water vapor in an underground-nuclear-explosion cavity. The condensation process is non-isothermal. Use has been made of the Clapeyron-Clausius equation as a basis for development of the model. Analytic fits to the vapor pressure and the latent heat of vaporization for saturated-water vapor, together with an estimated value for the heat-transfer coefficient, have been used to describe the phenomena. The calculated pressure-history during condensation has been determined to be exponential, with a time constant somewhat less than that observed during the cooling of the superheated steam from the explosion. The behavior of the calculated condensation-pressure compares well with the observed-pressure record (until just prior to cavity collapse) for a particular nuclear-detonation event for which data is available

Method of plasma enhanced chemical vapor deposition of diamond using methanol-based solutions

Science.gov (United States)

Tzeng, Yonhua (Inventor)

2009-01-01

Briefly described, methods of forming diamond are described. A representative method, among others, includes: providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system; introducing, in the absence of a gas stream, a liquid precursor substantially free of water and containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, into an inlet of the reaction chamber; vaporizing the liquid precursor; and subjecting the vaporized precursor, in the absence of a carrier gas and in the absence in a reactive gas, to a plasma under conditions effective to disassociate the vaporized precursor and promote diamond growth on the substrate in a pressure range from about 70 to 130 Torr.