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Sample records for wang ge yu

  1. Dynamics analysis of fractional order Yu-Wang system

    Science.gov (United States)

    Bhalekar, Sachin

    2013-10-01

    Fractional order version of a dynamical system introduced by Yu and Wang (Engineering, Technology & Applied Science Research, 2, (2012) 209-215) is discussed in this article. The basic dynamical properties of the system are studied. Minimum effective dimension 0.942329 for the existence of chaos in the proposed system is obtained using the analytical result. For chaos detection, we have calculated maximum Lyapunov exponents for various values of fractional order. Feedback control method is then used to control chaos in the system. Further, the system is synchronized with itself and with fractional order financial system using active control technique. Modified Adams-Bashforth-Moulton algorithm is used for numerical simulations.

  2. Dr. Yu Wang, Director, Natural Science Division, National Science Council, Taiwan

    CERN Document Server

    Patrice Loïez

    2001-01-01

    Photo 01: L. to r.: Dr. Philippe Bloch, CERN CMS ECAL Deputy Project Manager, Dr. Yu Wang, Dr. Etiennette Auffray, CERN, responsible of the CERN ECAL Regional Centre. Photo 02: L. to r.: Dr. Yu Wang, Dr. Philippe Bloch, Dr. Apollo GO, National Central University, Taiwan, Dr. Etiennette Auffray.

  3. Zhu Qing Wang

    Indian Academy of Sciences (India)

    Home; Journals; Journal of Chemical Sciences. Zhu Qing Wang. Articles written in Journal of Chemical Sciences. Volume 121 Issue 4 July 2009 pp 543-548. Highly sensitive optical chemosensor for the detection of Cu using a rhodamine B spirolatam · Gen Hua Wu Dong Xiang Wang Da Yu Wu Yuan Gao Zhu Qing Wang.

  4. Comparison of the Wang and Wachsmuth models for π production with measurements at 12 GeV/c

    International Nuclear Information System (INIS)

    Fernow, R.C.

    1996-01-01

    We converted the invariant cross section measurements of Blobel et al. at 12 GeV/c into the form d 2 σ/dΩdp as a function of the LAB total momentum p and p T . We adjusted the parameters of the pion production models of Wang and of Wachsmuth-Hagedorn-Ranft to obtain the best fit to the data. Neither model gave a statistically accurate fit to the data. copyright 1995 American Institute of Physics

  5. Qing Wang

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science. Qing Wang. Articles written in Bulletin of Materials Science. Volume 29 Issue 3 June 2006 pp 313-316 Composites. Anisotropic properties of aligned SWNT modified poly (methyl methacrylate) nanocomposites · Weixue Li Qing Wang Jianfeng Dai · More Details Abstract Fulltext ...

  6. Jun Wang

    Indian Academy of Sciences (India)

    0.32O2 solid solution on depositing -alumina washcoat on .... Volume 38 Issue 5 September 2015 pp 1435-1438. High-performance aqueous rechargeable batteries based on zinc anode and NiCo2O4 cathode · Jun Wang Zhijun Jia Songbo Li ...

  7. [Gao Jingyi. Han yu yu bei Ou yu yan : Han yu yu Wula'er yu yan ji Yin Ou yu yan tong yuan tan jiu] / Ago Künnap

    Index Scriptorium Estoniae

    Künnap, Ago, 1941-

    2010-01-01

    Arvustus: Gao Jingyi. Han yu yu bei Ou yu yan : Han yu yu Wula'er yu yan ji Yin Ou yu yan tong yuan tan jiu = Chinese language and languages of northern Europe. Beijing : Zhongguo she hui ke xue chu ban she, 2008

  8. Editorial: Which Wei Wang?

    International Nuclear Information System (INIS)

    Sprouse, Gene D.

    2007-01-01

    The APS journals receive manuscripts from scientists all over the world. For authors whose names cannot be expressed in Latin characters, their names in the byline must be transliterated, a process that is not necessarily bidirectionally unique. For example, the eight Chinese names all transliterate as Wei Wang. To remove some of the ambiguity arising from this unfortunate degeneracy of names, APS will allow some authors the option to include their names in their own language in parentheses after the transliterated name, such as Wei Wang. The option to present names in the article byline in this manner is an experiment initially offered to Chinese, Japanese, and Korean authors, whose names can be expressed in Unicode characters. An example of a Japanese name is Tadanori Minamisono and a Korean name is Chang Kee Jung. In the English text the given name precedes the family name, while the reverse is true for the characters. As we gain experience, we may be able to broaden this offer to other languages. Authors who wish to try this option will need to prepare their manuscripts by following the special instructions at http://authors.aps.org/names.html

  9. Important contributions of M.C. Wang and C.S. Wang Chang to non-equilibrium statistical physics

    International Nuclear Information System (INIS)

    Liu Jixing

    2004-01-01

    In the middle of the 20th century two Chinese women physicists, Ming-Chen Wang and Cheng-Shu Wang Chang made great contributions to statistical physics. The famous review article 'On the theory of the Brownian motion II' by Ming-Chen Wang and G.E. Uhlenbeck published in Rev. of Mod. Phys. in 1945 provided a complete scientific classification of stochastic processes which is still adopted by the scientific community as the standard classification. The Wang-Chang-Uhlenbeck (WCU) equation proposed jointly by C.S. Wang-Chang and Uhlenbeck became the fundamental kinetic equation for the treatment of transport properties of multi-atomic gases with internal degrees of freedom in the physics literature. These important scientific contributions are analyzed and reviewed

  10. Wang Tiles in Computer Graphics

    CERN Document Server

    Lagae, Ares

    2009-01-01

    Many complex signals in computer graphics, such as point distributions and textures, cannot be efficiently synthesized and stored. This book presents tile-based methods based on Wang tiles and corner tiles to solve both these problems. Instead of synthesizing a complex signal when needed, the signal is synthesized beforehand over a small set of Wang tiles or corner tiles. Arbitrary large amounts of that signal can then efficiently be generated when needed by generating a stochastic tiling, and storing only a small set of tiles reduces storage requirements. A tile-based method for generating a

  11. Wang Guowei's Application of Kant

    Directory of Open Access Journals (Sweden)

    JINLI HE

    2015-01-01

    Full Text Available Wang Guowei (1887-1927 was a late Qing scholar who assumed a pioneer role in introducing Western philosophy and is regarded as the founder of Chinese ideas about philosophical and literary-aesthetic modernity. His introduction and interpretation not only has been inspiring later scholars to be interested in European philosophy but also being a “showcase” of the “localness” of a cultural interpretation. This paper focuses on Kant’s influence on Wang Guowei, especially Wang’s use of Kant’s epistemological, ethical and aesthetic theories to reconstruct the important Chinese philosophical conceptions, such as, 'xing'性, 'li'理, 'ming'命, 'ya'雅 and what he called as Confucius’ 'meiyuzhuyi'美育主義(aesthetic educational-ism and aims to achieve a better grasp of the continuity and revolution that accompany the emergence of Chinese modernity as well as a better understanding of comparative culture (philosophy in its “primitive” phase.

  12. 王弼《老子注》的詮釋辨證/ Interpretative Dialectics of Wang Bi’s Exegesis of Lao-Tzu

    Directory of Open Access Journals (Sweden)

    Jung-Tao TSAI

    2012-09-01

    Wang Bi, the most prominent scholar of metaphysics of the Wei and Jin Dynasties, was an unprecedented genius throughout the history of Chinese philosophy. In this article, the author examines the brilliant contributions made by Lin Li Zhen, Yu Dun Kang and Rudolf G. Wagner, who are noticed for their research of Exegesis of Lao-Tzu. It is a synthesis of the directions of investigation, approaches, and significant findings they have come up with. Among the three interpretations, Lin focuses on the explanation of Wang’s metaphysic thinking while Yu emphasizes Wang’s secular concerns by proposing the “philosophy of thoroughness” and political holism. As for Wagner, he approaches this work with the views of linguistic philosophy and suggests refined stylistics as interpretative strategy, which functions to enrich the textual contents.

  13. The Wang-Landau Sampling Algorithm

    Science.gov (United States)

    Landau, David P.

    2003-03-01

    Over the past several decades Monte Carlo simulations[1] have evolved into a powerful tool for the study of wide-ranging problems in statistical/condensed matter physics. Standard methods sample the probability distribution for the states of the system, usually in the canonical ensemble, and enormous improvements have been made in performance through the implementation of novel algorithms. Nonetheless, difficulties arise near phase transitions, either due to critical slowing down near 2nd order transitions or to metastability near 1st order transitions, thus limiting the applicability of the method. We shall describe a new and different Monte Carlo approach [2] that uses a random walk in energy space to determine the density of states directly. Once the density of states is estimated, all thermodynamic properties can be calculated at all temperatures. This approach can be extended to multi-dimensional parameter spaces and has already found use in classical models of interacting particles including systems with complex energy landscapes, e.g., spin glasses, protein folding models, etc., as well as for quantum models. 1. A Guide to Monte Carlo Simulations in Statistical Physics, D. P. Landau and K. Binder (Cambridge U. Press, Cambridge, 2000). 2. Fugao Wang and D. P. Landau, Phys. Rev. Lett. 86, 2050 (2001); Phys. Rev. E64, 056101-1 (2001).

  14. Jing Tong Yu Shu , a traditional Chinese medicine, suppresses IL ...

    African Journals Online (AJOL)

    Purpose: To evaluate the effect of a traditional Chinese medicine, Jing Tong Yu Shu (JTYS) on endometriosis in a rat surgical model. Methods: Endometriosis was induced in 40 female rats. The rats were randomly divided into 4 groups: three JTYS groups given different doses of the drug, and a saline group. After four ...

  15. The Rubber Band Revisited: Wang-Landau Simulation

    OpenAIRE

    Ferreira, Lucas S.; Caparica, Alvaro A.; Neto, Minos A.; Galiceanu, Mircea D.

    2012-01-01

    In this work we apply Wang-Landau simulations to a simple model which has exact solutions both in the microcanonical and canonical formalisms. The simulations were carried out by using an updated version of the Wang-Landau sampling. We consider a homopolymer chain consisting of $N$ monomers units which may assume any configuration on the two-dimensional lattice. By imposing constraints to the moves of the polymers we obtain three different models. Our results show that updating the density of...

  16. Spatial chaos of Wang tiles with two symbols

    Science.gov (United States)

    Chen, Jin-Yu; Chen, Yu-Jie; Hu, Wen-Guei; Lin, Song-Sun

    2016-02-01

    This investigation completely classifies the spatial chaos problem in plane edge coloring (Wang tiles) with two symbols. For a set of Wang tiles B , spatial chaos occurs when the spatial entropy h ( B ) is positive. B is called a minimal cycle generator if P ( B ) ≠ 0̸ and P ( B ' ) = 0̸ whenever B ' ⫋ B , where P ( B ) is the set of all periodic patterns on ℤ2 generated by B . Given a set of Wang tiles B , write B = C 1 ∪ C 2 ∪ ⋯ ∪ C k ∪ N , where Cj, 1 ≤ j ≤ k, are minimal cycle generators and B contains no minimal cycle generator except those contained in C1∪C2∪⋯∪Ck. Then, the positivity of spatial entropy h ( B ) is completely determined by C1∪C2∪⋯∪Ck. Furthermore, there are 39 equivalence classes of marginal positive-entropy sets of Wang tiles and 18 equivalence classes of saturated zero-entropy sets of Wang tiles. For a set of Wang tiles B , h ( B ) is positive if and only if B contains a MPE set, and h ( B ) is zero if and only if B is a subset of a SZE set.

  17. [Autobiography of modern acupuncturist Yu Shu-zhuang].

    Science.gov (United States)

    Li, Jia-jian' i; Guo, Jing; Yu, Zhen-zhong; Wang, Lin-peng

    2014-11-01

    Professor YU Shu-zhuang is a distinguished acupuncturist in China. He has practiced the TCM acupuncture-moxibustion clinical, educational and scientific research for 60 years in his life. In clinic, he summarized the experiences "five-ming first"; in treatment, he insisted "dredging" and "regulating", protecting the function of spleen and stomach, and needles should be less but specific. In the meanwhile, he made a deep study on the function and clinical effects of specific acupoints, and used the research results of propagated sensation along channel to guide clinical treatment, forming his special academic points. Professor YU has educated a great number of acupuncture-moxibustion talents in China and foreign countries, making great contribution to the popularization of acupuncture-moxibustion in the worldwide.

  18. Yu.S. Osipov's work in mathematical control theory

    International Nuclear Information System (INIS)

    Kryazhimskiy, Arkady A

    2006-01-01

    This paper gives an overview of Yu.S. Osipov's work in mathematical control theory, including development of the theory of positional differential games for control systems with time delay; analysis of the phenomenon of infinite dimensionality of the state space of a dynamical system in the context of differential games; development of the theory of dynamical inversion (dynamical regularization) for finite- and infinite-dimensional control systems; applications of methods of the theory of positional differential games beyond the scope of the theory itself; work on new differential-game methods and on methods of control under incomplete information. The author of this overview is the first student of Osipov, and also his longstanding colleague.

  19. Comments on Yu N Parkhomenko's paper 'Role of aberration effects in dispersive cavities'

    International Nuclear Information System (INIS)

    Anokhov, S P

    1999-01-01

    The legitimacy of the approach, proposed by Yu N Parkhomenko for dealing with the operation of solid-state lasers with dispersive cavities, is discussed. Additional information is provided on the neodymium glass laser, used in the present author's experiment. Comment on A Yu N Parkhomenko 1998 Quantum Electron. 28 1102. (discussion)

  20. On a conjecture of Chen-Guo-Wang

    OpenAIRE

    Ning, Bo; Zheng, Yu

    2015-01-01

    Towards confirming Sun's conjecture on the strict log-concavity of combinatorial sequence involving the n$th$ Bernoulli number, Chen, Guo and Wang proposed a conjecture about the log-concavity of the function $\\theta(x)=\\sqrt[x]{2\\zeta(x)\\Gamma(x+1)}$ for $x\\in (6,\\infty)$, where $\\zeta(x)$ is the Riemann zeta function and $\\Gamma(x)$ is the Gamma function. In this paper, we first prove this conjecture along the spirit of Zhu's previous work. Second, we extend Chen et al.'s conjecture in the ...

  1. THE APPLICATION OF SURVEY IN ER WANG TEMPLE RESTITUTING

    Directory of Open Access Journals (Sweden)

    W. Shuai

    2013-07-01

    Full Text Available Er Wang Temple, in World Heritage Site "Dujiang Weirs and Qingchengshan Mountai", was severely destroyed in Wenchuan earthquake of May 2008. There are several problems at different level in every building, such as structural distortion, foundation displacement, wall fracture, roof damage, etc. The stage was completely collapsed in the earthquake. Tableland the stage situated had a huge crack and slope collapse. This article is for the stage renovation. The survey of damage in earthquake is the basis of Er Wang Temple restituting. Survey including field survey after the earthquake and the measurement and investigation for the remained construction member of the main wood structure. For field survey, the basis of pillars which had not have significantly affects in earthquake could be seem as the reference points for measurement. The investigation of remained main wood construction member, especially the size of the key structures and site and manufacture method of the joints, is the important basis for recovery stage. Our team did our utmost to restore the original appearance of stage in design, materials and craft by various tools, which include measured drawings in different times, old images collection, fine measuring by 3D laser scan, measurement of leftover pieces, logical inference.

  2. Feng xian tai du yu jiao yu he zhi ye xuan ze xing wei: yi ge shi yan fang fa de yan jiu an li

    NARCIS (Netherlands)

    Ding, X.; Sun, Y.; Hartog, J.

    2009-01-01

    An experimental study on risk attitude and choice behavior of education and career This paper introduces a research on risk attitude and choice behavior of education and career. Using the experimental methods, this study focuses on testing the reliability and validity of risk attitude measurement.

  3. Orbital Picture of Yu-Shiba-Rusinov Multiplets

    Science.gov (United States)

    Heinrich, Benjamin W.; Ruby, Michael; Franke, Katharina J.; Peng, Yang; von Oppen, Felix

    Magnetic impurities on an s-wave superconductor induce Yu-Shiba-Rusinov (YSR) bound states within the excitation gap of the superconductor. Here, we investigate single manganese (Mn) atoms adsorbed on different surface orientations of superconducting lead (Pb) and the nature of their YSR states. Depending on the adsorption site and surface, we detect a distinct number and characteristic patterns of YSR states around the Mn atoms. We show that the YSR states inherit their properties from the Mn d levels, which are split by the surrounding crystal field. The periodicity of the long-range YSR oscillations allows us to identify a dominant coupling of the d states to the outer Fermi sheet of the two-band superconductor Pb. The long-range and directional nature of the states are promising for the design of coupled adatom structures, which could bear topological phases. We acknowledge funding by the Deutsche Forschungsgemeinschaft through Grant No. FR2726/4 and through collaborative research Grants No. Sfb 658, No. CRC 183, and No. SPP 1666, as well as by the European Research Council through Consolidator Grant NanoSpin.

  4. Multiple Walkers in the Wang-Landau Algorithm

    Energy Technology Data Exchange (ETDEWEB)

    Brown, G

    2005-12-28

    The mean cost for converging an estimated density of states using the Wang-Landau algorithm is measured for the Ising and Heisenberg models. The cost increases in a power-law fashion with the number of spins, with an exponent near 3 for one-dimensional models, and closer to 2.4 for two-dimensional models. The effect of multiple, simultaneous walkers on the cost is also measured. For the one-dimensional Ising model the cost can increase with the number of walkers for large systems. For both the Ising and Heisenberg models in two-dimensions, no adverse impact on the cost is observed. Thus multiple walkers is a strategy that should scale well in a parallel computing environment for many models of magnetic materials.

  5. The Wang-Meng interacting model and the gravitational collapse

    International Nuclear Information System (INIS)

    Campos, Miguel de

    2013-01-01

    Full text: Several alternatives have appear in the literature to supply the accelerated process of universal expansion, and the simplest possibility is to consider the inclusion of a cosmological constant. The inclusion can be realized in both sides of the Einstein field equations, furnishing different physical interpretations in accord with the side of the Einstein field equations where the Λ is added. Considering the inclusion of the cosmological constant in the energy momentum tensor, this additional content is generally interpreted as the energy storage on the vacuum state of all fields in the universe. The inclusion of a vacuum component in the universal fluid furnishes an excellent description of the observed universe, but from the theoretical point of view we do not understand why the vacuum energy is so small and of the same order of magnitude of the matter density (cosmological constant problem). Depending on the point of view of the cosmological constant problem, competing approaches were developed considering a dynamical cosmological 'constant'. A more richer possibility is to consider a non-gravitational interaction models, where the interaction can occur between the dark components, the ordinary matter, and they do not evolve separately. The coupling between dark matter and dark energy has been considered in the literature in a three different ways: dark matter decaying to dark energy; dark energy decaying to dark matter; interacting in both directions. Wang and Meng (CQG 22, 283,2005) considered an alternative to the usual approach for the decay law of the Λ-term assuming the effect of the vacuum in the matter expansion rate. The simple manner adopt by the authors unified several current models that includes a vacuum decaying component interacting with matter content. The vacuum component alters the dynamics of the universal expansion process, then is a natural question: how is the influence of the vacuum energy in the gravitational collapse with a

  6. Rigorous lower bound on the dynamic critical exponent of some multilevel Swendsen-Wang algorithms

    International Nuclear Information System (INIS)

    Li, X.; Sokal, A.D.

    1991-01-01

    We prove the rigorous lower bound z exp ≥α/ν for the dynamic critical exponent of a broad class of multilevel (or ''multigrid'') variants of the Swendsen-Wang algorithm. This proves that such algorithms do suffer from critical slowing down. We conjecture that such algorithms in fact lie in the same dynamic universality class as the stanard Swendsen-Wang algorithm

  7. Yu Kilchun’s Concept of Reform of the Tax System in the Korean Empire

    Directory of Open Access Journals (Sweden)

    Jinah Yang

    2016-08-01

    Full Text Available Yu Kilchun in “Semubu (Tax Department” criticizes the trend of the tax system, in which the authority to impose and collect taxes had been taken away from the local magistrates and the isŏ class (composed of hyangni, local functionaries, and sŏri, petty clerks during the Kabo Reform was once again returned to them. Yu Kilchun devised a concept of tax system reform on the premise of the reorganization of the administrative districts into the chu-kun-hyang-ri (state-county-district-village system. Yu’s idea was to make myŏn (hyang, district a governing administrative unit, placed under direct government control. To fund the operation of local governments, Yu proposed to create local taxes, chu taxes and hyang. Tax amounts were to be determined by local assemblies, chuhoe and hyanghoe, which were given the authority to deliberate on budget. The authority to review tax sources, levy and collect taxes was given to hyang, a small unit of administrative division. By imbuing this authority to hyang, Yu Kilchun planned to exclude local magistrates and the isŏ class in the tax collection process. Since “Semubu” discusses the reorganization of administrative divisions and local tax administration, as well as local tax system reform, the discovery of this text is significant, as it expands the range of the reform ideas proposed by Yu Kilchun, and furthermore the Enlightenment Party.

  8. YU Ren-cun(郁仁存)——A Famous Oncologist in Integrative Medicine

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    @@ YU Ren-cun was born on August 1,1934.After graduating from Jiangxi Medical College in 1955,he took part in the very first Western Doctors' Class for Learning Traditional Chinese Medicine (TCM) held in Beijing from March 1959 to December 1961.Prof.YU systematically learned TCM while taking this class.Since 1962,he has been working in the Beijing Hospital of Traditional Chinese Medicine,eventually being promoted to a Chief Physician by the Beijing Municipal Government in May of 1981.In 1997,Prof.YU was selected as a well-known veteran for the National TCM Doctor Inheritance Work by the State Administration of Traditional Chinese Medicine (SATCM).The State Council of China has awarded him a special subsidy every month for his excellent work.

  9. Yue Joseph Wang named Grant A. Dove Professor of Electrical and Computer Engineering

    OpenAIRE

    Owczarski, Mark

    2009-01-01

    Yue Joseph Wang, professor of electrical and computer engineering in the College of Engineering at Virginia Tech, has been named the Grant A. Dove Professor of Electrical and Computer Engineering by the Virginia Tech Board of Visitors.

  10. A note on Wang et al's attack on Zhang et al's multiparty quantum secret sharing

    International Nuclear Information System (INIS)

    Gao Gan

    2012-01-01

    Recently, Wang et al (2008 Phys. Lett. A 373 65) proposed an attack on Zhang et al's (2007 Opt. Commun. 269 418) multiparty quantum secret sharing scheme, in which the first and the last agent are reported to be able to cooperatively eavesdrop on all the secret messages without being detected. In this paper, we show that in Wang et al's attack, on average no more than half the secret messages can be eavesdropped. (paper)

  11. Orbital Mechanics near a Rotating Asteroid Yu Jiang1,2,∗ & Hexi ...

    Indian Academy of Sciences (India)

    The Hamilton function can then be written as (Yu & Baoyin 2012a). H = 1. 2 .... The symplectic structure is a differential exterior 2-form defined on a ..... The disadvantage of Poisson-bracket, Poisson and cohomology forms is unavailable for ...

  12. Jing Tong Yu Shu, a traditional Chinese medicine, suppresses IL-1β ...

    African Journals Online (AJOL)

    Zhang et al. 2953. Tropical ... Purpose: To evaluate the effect of a traditional Chinese medicine, Jing Tong Yu Shu (JTYS) on endometriosis in a ..... Flower A, Liu JP, Chen S, Lewith G, Little P. Chinese ... Mol Hum Reprod 2000; 6: 269-275. 18.

  13. Comprehensive geological report on Yu Hsien mining area, Yu Hsien coalfield, Hopeh Province in the People's Republic of China

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    This is a detailed geological survey report on Yu Hsien coalfield for the period beginning in 1987 and ending in March, 2001. The survey elucidated the structures, beds, coal seams, coal property, hydro-geological features, and other mining technological conditions in Beiyang Zhuang mining area. In addition, as a result of coal reserves calculation, the total of A, B and C class coal reserves was 328.34 million tons, of which No.1 and No.5 coal seams were 259.79 million tons, taking 79.1% of the entire reserves. The average coal seam thickness of the No.1 and No.5 coal seams, which are the principal minable coal seams, are each 3.10 m and 2.66 m, with the existing depth usually 300-711 m; the coal properties are classified into low-medium ash, low sulfur, low phosphorus, and medium heating value. The coal category is long flame coal, with the use applicable to cement, electric power, gasification, etc. As the infrastructure, Beiyang Zhuang mining area is one of the three mines for which development has been decided in Yu Hsien coalfield. with the planned coal output scheduled for 1.8 million tons, and with a road or a dedicated railroad for coal maintained leading to large and medium cities such as Changkiakow, Suanhwa and Beijing. Further, railway construction is in progress, so that transportation conditions are extremely favorable. Preliminary investigation of industries and construction of coal pits should be considered. (NEDO)

  14. GeSn/Si Avalanche Photodetectors on Si substrates

    Science.gov (United States)

    2016-09-16

    National Academy Member Shui-Qing Yu 0.00 Hameed Naseem 0.00 0.00 2 PERCENT_SUPPORTEDNAME FTE Equivalent: Total Number: Sub Contractors (DD882) Names of...second step is a high temperature ( HT ) growth above 500-650 °C. The two-step (LT:HT) growth method adopted for the growth of Ge and the role of pressure...a) (b) Fig. 16. (a) Raman spectroscopy measurements of the two-step (LT:HT) at 400:600 °C and the single-step ( HT ) at 600 °C growth shows

  15. Development of the SONIX software for the YuMO instrument at the IBR-2 reactor

    International Nuclear Information System (INIS)

    Kirilov, A.S.; Litvinenko, E.I.; Astakhova, N.V.; Murashevich, S.M.; Petukhova, T.B.; Yudin, V.E.; Gordelij, V.I.; Islamov, A.Kh.; Kuklin, A.I.

    2003-01-01

    The main results of the modernization of the software complex of the YuMO spectrometer are described. The comparison of the previous MS-DOS based software and new OS-9 based one is carried out. The advantages and disadvantages of each program are described. The main features of the new software complex and the results of its long-term operation are presented. It is shown that the software upgrade essentially improved the spectrometer control. (author)

  16. Estimating the Partition Function Zeros by Using the Wang-Landau Monte Carlo Algorithm

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seung-Yeon [Korea National University of Transportation, Chungju (Korea, Republic of)

    2017-03-15

    The concept of the partition function zeros is one of the most efficient methods for investigating the phase transitions and the critical phenomena in various physical systems. Estimating the partition function zeros requires information on the density of states Ω(E) as a function of the energy E. Currently, the Wang-Landau Monte Carlo algorithm is one of the best methods for calculating Ω(E). The partition function zeros in the complex temperature plane of the Ising model on an L × L square lattice (L = 10 ∼ 80) with a periodic boundary condition have been estimated by using the Wang-Landau Monte Carlo algorithm. The efficiency of the Wang-Landau Monte Carlo algorithm and the accuracies of the partition function zeros have been evaluated for three different, 5%, 10%, and 20%, flatness criteria for the histogram H(E).

  17. Cryptanalysis of Wang et al.’s lattice-based key exchange protocol

    Directory of Open Access Journals (Sweden)

    Daya Sagar Gupta

    2016-09-01

    Full Text Available Wang et al. proposed a new hard problem on lattices which is an extension of the small integer solution (SIS on lattices. This new generated hard problem is named to be bilateral in-homogeneous small integer solution (Bi-ISIS. Using the hardness of Bi-ISIS, Wang et al. proposed a new key exchange protocol, which is based on the lattice-based cryptography. In this paper, we signalize that Wang et al.’s lattice-based key exchange protocol is vulnerable to an attack, namely, man-in-the-middle (MITM attack. Through this attack, Eavesdropper can intercept the authenticated messages and communicate the unauthentic messages among the communicating parties.

  18. [Professor WANG Fuchun's experience in the acupoint selection of clinical treatment with acupuncture and moxibustion].

    Science.gov (United States)

    Jiang, Hailin; Liu, Chengyu; Ha, Lijuan; Li, Tie

    2017-11-12

    Professor WANG Fuchun 's experience in the acupoint selection of clinical treatment with acupuncture and moxibustion was summarized. The main acupoints are selected by focusing on the chief symptoms of disease, the supplementary points are selected by differentiating the disorders. The acupoints are modified in terms of the changes of sickness. The effective acupoints are selected flexibly in accordance with the specific effects of points. The summary on the acupoint selection reflects professor WANG Fuchun 's academic thoughts and clinical experience and effectively instructs the clinical practice of acupuncture and moxibustion.

  19. New Wang-Landau approach to obtain phase diagrams for multicomponent alloys

    Science.gov (United States)

    Takeuchi, Kazuhito; Tanaka, Ryohei; Yuge, Koretaka

    2017-10-01

    We develop an approach to apply the Wang-Landau algorithm to multicomponent alloys in a semi-grand-canonical ensemble. Although the Wang-Landau algorithm has great advantages over conventional sampling methods, there are few applications to alloys. This is because calculating compositions in a semi-grand-canonical ensemble via the Wang-Landau algorithm requires a multidimensional density of states in terms of total energy and compositions, and constructing it is difficult from the viewpoints of both implementation and computational cost. In this study, we develop a simple approach to calculate the alloy phase diagram based on the Wang-Landau algorithm, and show that a number of one-dimensional densities of states could lead to compositions in a semi-grand-canonical ensemble as a multidimensional density of states could. Finally, we apply the present method to Cu-Au and Pd-Rh alloys and confirm that the present method successfully describes the phase diagram with high efficiency, validity, and accuracy.

  20. Evaluating Small Sphere Limit of the Wang-Yau Quasi-Local Energy

    Science.gov (United States)

    Chen, Po-Ning; Wang, Mu-Tao; Yau, Shing-Tung

    2018-01-01

    In this article, we study the small sphere limit of the Wang-Yau quasi-local energy defined in Wang and Yau (Phys Rev Lett 102(2):021101, 2009, Commun Math Phys 288(3):919-942, 2009). Given a point p in a spacetime N, we consider a canonical family of surfaces approaching p along its future null cone and evaluate the limit of the Wang-Yau quasi-local energy. The evaluation relies on solving an "optimal embedding equation" whose solutions represent critical points of the quasi-local energy. For a spacetime with matter fields, the scenario is similar to that of the large sphere limit found in Chen et al. (Commun Math Phys 308(3):845-863, 2011). Namely, there is a natural solution which is a local minimum, and the limit of its quasi-local energy recovers the stress-energy tensor at p. For a vacuum spacetime, the quasi-local energy vanishes to higher order and the solution of the optimal embedding equation is more complicated. Nevertheless, we are able to show that there exists a solution that is a local minimum and that the limit of its quasi-local energy is related to the Bel-Robinson tensor. Together with earlier work (Chen et al. 2011), this completes the consistency verification of the Wang-Yau quasi-local energy with all classical limits.

  1. The Near-Earth Encounter of Asteroid 308635 (2005 YU55): Thermal IR Observations

    Science.gov (United States)

    Lim, Lucy F.; Emery, J. P.; Moskovitz, N. A.; Busch, M. W.; Yang, B.; Granvik, M.

    2012-10-01

    The near-Earth approach (0.00217 AU, or 0.845 lunar distances) of the C-type asteroid 308635 (2005 YU55) in November 2011 presented a rare opportunity for detailed observations of a low-albedo NEA in this size range. As part of a multi-telescope campaign to measure visible and infrared spectra and photometry, we obtained mid-infrared ( 8 to 22 micron) photometry and spectroscopy of 2005 YU55 using Michelle [1] on the Gemini North telescope on UT November 9 and 10, 2011. An extensive radar campaign [2] together with optical lightcurves [3,4] established the rotation state of YU55. In addition, the radar imaging resulted in a shape model for the asteroid, detection of numerous boulders on its surface, and a preliminary estimate of its equatorial diameter at 380 +/- 20 m. In a preliminary analysis, applying the radar and lightcurve-derived parameters to a rough-surface thermophysical model fit to the Gemini/Michelle thermal emission photometry results in a thermal inertia range of approximately 500 to 1500 J m-2 s-1/2 K-1, with the low-thermal-inertia solution corresponding to the small end of the radar size range and vice versa. Updates to these results will be presented and modeling of the thermal contribution to the measured near-infrared spectra from Palomar/Triplespec and IRTF/SpeX will also be discussed. The authors gratefully acknowledge the assistance of observatory staff and the support of the NASA NEOO program (LFL and JPE), the Carnegie fellowship (NAM), and NASA AES, NSF, and the NRAO Jansky Fellowship (MWB). [1] De Buizer, J. and R. Fisher, Proc. Hris (2005), pp. 84-87. [2] Busch, M.W. et al., ACM (2012), abstract #6179. [3] Warner, B., MPBull 39 (2), 84 [4] Pravec, P.

  2. S.Yu. Witte's Customs Policy and Regulation of State Import of Industrial Equipment

    Directory of Open Access Journals (Sweden)

    Антон Юрьевич Петров

    2013-12-01

    Full Text Available The article considers state import of industrial equipment in the context of the customs regulation of Russia’s foreign trade under S.Yu. Witte as the Minister of Finance (1892–1903. The analysis of archival data reveals the motives which drove various ministries of the Russian empire when they gave preference to foreign producers rather than domestic ones. In the 1890s the Ministry of Finance, on the one hand, and other ministries, on the other hand, were debating the necessity of orders for foreign industrial equipment made by the Russian governmental bodies. The article studies the course and results of this interdepartmental struggle.

  3. Deterministic integer multiple firing depending on initial state in Wang model

    Energy Technology Data Exchange (ETDEWEB)

    Xie Yong [Institute of Nonlinear Dynamics, MSSV, Department of Engineering Mechanics, Xi' an Jiaotong University, Xi' an 710049 (China)]. E-mail: yxie@mail.xjtu.edu.cn; Xu Jianxue [Institute of Nonlinear Dynamics, MSSV, Department of Engineering Mechanics, Xi' an Jiaotong University, Xi' an 710049 (China); Jiang Jun [Institute of Nonlinear Dynamics, MSSV, Department of Engineering Mechanics, Xi' an Jiaotong University, Xi' an 710049 (China)

    2006-12-15

    We investigate numerically dynamical behaviour of the Wang model, which describes the rhythmic activities of thalamic relay neurons. The model neuron exhibits Type I excitability from a global view, but Type II excitability from a local view. There exists a narrow range of bistability, in which a subthreshold oscillation and a suprathreshold firing behaviour coexist. A special firing pattern, integer multiple firing can be found in the certain part of the bistable range. The characteristic feature of such firing pattern is that the histogram of interspike intervals has a multipeaked structure, and the peaks are located at about integer multiples of a basic interspike interval. Since the Wang model is noise-free, the integer multiple firing is a deterministic firing pattern. The existence of bistability leads to the deterministic integer multiple firing depending on the initial state of the model neuron, i.e., the initial values of the state variables.

  4. Deterministic integer multiple firing depending on initial state in Wang model

    International Nuclear Information System (INIS)

    Xie Yong; Xu Jianxue; Jiang Jun

    2006-01-01

    We investigate numerically dynamical behaviour of the Wang model, which describes the rhythmic activities of thalamic relay neurons. The model neuron exhibits Type I excitability from a global view, but Type II excitability from a local view. There exists a narrow range of bistability, in which a subthreshold oscillation and a suprathreshold firing behaviour coexist. A special firing pattern, integer multiple firing can be found in the certain part of the bistable range. The characteristic feature of such firing pattern is that the histogram of interspike intervals has a multipeaked structure, and the peaks are located at about integer multiples of a basic interspike interval. Since the Wang model is noise-free, the integer multiple firing is a deterministic firing pattern. The existence of bistability leads to the deterministic integer multiple firing depending on the initial state of the model neuron, i.e., the initial values of the state variables

  5. [Professor WANG Linpeng's experience of acupuncture for migraine based on different stages and types].

    Science.gov (United States)

    Wang, Shaosong

    2016-07-12

    By using the methods of experience summary and case report, professor WANG Linpeng 's clinical experience of acupuncture for migraine was summarized.Professor WANG proposed the different acupuncture plans should be established according to the active stage and remission stage of migraine; in the active stage acupuncture should be applied at gallbladder meridian with penetration needling technique to reinforce the stimulation intensity; in the remission stage the aim was to regulate zang-fu and back- shu points should be emphasized.In addition, attention should be paid on acupuncture technique and preventive treatment.For menstruation-type and psychological disorder-type migraine, different acupuncture plans should be adopted and regulating meridian and spirit was essential in the treatment.

  6. [Experience summary of professor WANG Fuchun's "Zhenjing Anshen" acupuncture method for insomnia].

    Science.gov (United States)

    Li, Tie; Ha, Lijuan; Cao, Fang; Zhi, Mujun; Wang, Fuchun

    2015-11-01

    The experience of "Zhenjing Anshen" acupuncture method originally created by professor WANG Fuchun for treatment of insomnia was introduced in this paper. From aspects of insomnia pathogenesis, theoretical foundation, characteristics of acupoint selection, needing methods, needing time, etc., the experience of Professor WANG Fuchun for treatment of insomnia was explained. The "Zhenjing Anshen" acupuncture method proposed, for the first time, "new three layers" method of acupoint selection, including Sishencong (EX-HN 1), Shenmen (HT 7), Sanyinjiao (SP 6). This method presents the principles of acupoint selection along meridian, acupoint selection based on essence-qi-spirit, harmony of yin and yang. The acupuncture manipulation is emphasized, and treating time (the period of the day from 3 pm to 5 pm) is focused on; acupoint selection is simple but essential, and acupoint combination is scientific, which receives notable therapeutic effect in clinic.

  7. Wang-Landau Reaction Ensemble Method: Simulation of Weak Polyelectrolytes and General Acid-Base Reactions.

    Science.gov (United States)

    Landsgesell, Jonas; Holm, Christian; Smiatek, Jens

    2017-02-14

    We present a novel method for the study of weak polyelectrolytes and general acid-base reactions in molecular dynamics and Monte Carlo simulations. The approach combines the advantages of the reaction ensemble and the Wang-Landau sampling method. Deprotonation and protonation reactions are simulated explicitly with the help of the reaction ensemble method, while the accurate sampling of the corresponding phase space is achieved by the Wang-Landau approach. The combination of both techniques provides a sufficient statistical accuracy such that meaningful estimates for the density of states and the partition sum can be obtained. With regard to these estimates, several thermodynamic observables like the heat capacity or reaction free energies can be calculated. We demonstrate that the computation times for the calculation of titration curves with a high statistical accuracy can be significantly decreased when compared to the original reaction ensemble method. The applicability of our approach is validated by the study of weak polyelectrolytes and their thermodynamic properties.

  8. A power law of order 1/4 for critical mean field Swendsen-Wang dynamics

    CERN Document Server

    Long, Yun; Ning, Weiyang; Peres, Yuval

    2014-01-01

    The Swendsen-Wang dynamics is a Markov chain widely used by physicists to sample from the Boltzmann-Gibbs distribution of the Ising model. Cooper, Dyer, Frieze and Rue proved that on the complete graph K_n the mixing time of the chain is at most O(\\sqrt{n}) for all non-critical temperatures. In this paper the authors show that the mixing time is \\Theta(1) in high temperatures, \\Theta(\\log n) in low temperatures and \\Theta(n^{1/4}) at criticality. They also provide an upper bound of O(\\log n) for Swendsen-Wang dynamics for the q-state ferromagnetic Potts model on any tree of n vertices.

  9. An Interview with Shiang-Kwei Wang: Digital Immigrants versus Digital Natives

    OpenAIRE

    Shaughnessy, Michael F; Kleyn Kennedy, Cynthia Anne

    2015-01-01

    In the field of instructional technology and educational technology, there has always been a discussion about the “great divide“ between digital immigrants and digital natives. Teachers often express exasperation as to the lack of skills that students often possess, and the general consensus that purports that the pupils of today are technologically literate and that their “learning curve” is vastly superior to those of past generations. In this interview, Dr. Shiang-Wei Wang responds to ques...

  10. Two alternate proofs of Wang's lune formula for sparse distributed memory and an integral approximation

    Science.gov (United States)

    Jaeckel, Louis A.

    1988-01-01

    In Kanerva's Sparse Distributed Memory, writing to and reading from the memory are done in relation to spheres in an n-dimensional binary vector space. Thus it is important to know how many points are in the intersection of two spheres in this space. Two proofs are given of Wang's formula for spheres of unequal radii, and an integral approximation for the intersection in this case.

  11. [Textual research on Guang dong xin yu (New Sayings of Guangdong) quoted in Ben cao gang mu shi yi (Supplements to Compendium of Materia Medica].

    Science.gov (United States)

    Zhang, Ruixian; Zhang, Wei; Li, Jian; Liang, Fei

    2014-05-01

    Altogether 15 terms for Guang dong xin yu (New Sayings of Guangdong) were used in Ben cao gang mu shi yi (Supplements to Compendium of Materia Medica), including Yue yu (Cantonese sayings), Chong yu (Sayings from Insect Drug), Jie yu (Sayings from Crustacean Drug), Xin yu (New Sayings), Yue hai xiang yu (Fragrant Sayings from Cantonese Region), Yue zhi mu yu (Sayings from Plants in Cantonese Annals), Guang dong suo yu (Trivial Sayings from Guangdong), Yue shan lu (Records of Cantonese Mountains), Yue lu (Cantonese Records), Jiao guang lu (Joint Guangdong Records), Yue cao zhi (Records of Cantonese Grasses), Guang guo lu (Records of Guangdong Fruits), Nan yue suo ji (Trivial Records of Southern Canton), Guang zhi (Guangdong Records), Yue zhi (Cantonese Records) etc. dealing with 57 sorts of drugs (with individual overlapping ones), the author of Xin yu was Qu Dajun, a surviving fogy of the Ming Dynasty actively involved in the activities to restore the old dynasty and resist the Qing Dynasty, and was persecuted in the literary inquisition in which his works were burnt so that Zhao Xuemin, when quoting his texts, had to go in a roundabout way.

  12. [Professor WANG Yin's academic thoughts and clinical application of acupuncture for spleen-sto-mach care].

    Science.gov (United States)

    Niu, Hua; Cao, Haibo; Wang, Yin

    Professor WANG Yin 's academic thoughts and clinical application for difficult and miscellaneous di-seases, especially acupuncture for spleen-stomach care, are introduced. Based on TCM basic theory and "ten needles for elderly" by WANG Yueting , Professor WANG Yin proposes the acupuncture for spleen-stomach care. In this method, three-element acupoint selection is applied; the conception vessel, spleen meridian of foot taiyin and stomach meridian of foot yangming were selected. The deep and penetration acupuncture with 0.4 mm×100 mm elongated needles is used at Zhongwan (CV 12), Qihai (CV 6) and Zigong (EX-CA 1), and the mild reinforcing-reducing method is used at remaining acupoints. According to the severity of diseases, fire acupuncture combined with blood-letting cupping is applied at Tianshu (ST 25), Xuehai (SP 10) and Yinlingquan (SP 9); gene-rally, two acupoints are selected and 1 to 3 mL blood-letting is appropriate. The modification based on this me-thod can be applied for various difficult and miscellaneous diseases, leading to superior efficacy.

  13. The ABCs of Chinese Pop: Wang Leehom and the Marketing of a Global Chinese Celebrity

    Directory of Open Access Journals (Sweden)

    Grace Wang

    2012-06-01

    Full Text Available How did singer Wang Leehom, a Chinese American raised in the suburbs of New York, end up becoming one of the industry heavyweights of Mandopop (Mandarin-language pop music? This essay uses Wang as a case study to investigate how discourses of race, market, and belonging are reworked in global contexts. Drawing on Sau-ling Wong’s theoretical insights on transnational processes of race, citizenship, and belonging, it argues that Wang capitalizes on a fluid dynamic of sameness and difference to appeal to a heterogeneous Chinese-speaking audience that stretches across China to Taiwan, Hong Kong, Southeast Asia, and the greater Chinese diaspora. Through an examination of the racial and national contexts that frame Wang’s participation in Mandopop, this essay analyzes the particular calibrations of Chineseness that emerge from the singer’s music and public image and the imperfect translation of identities such as Chinese American, Chinese diasporic, and Chinese across diverse linguistic and national communities.

  14. Comparison of congener profiles of polychlorinated biphenyls between Yu-cheng children and a potential food source

    Energy Technology Data Exchange (ETDEWEB)

    Lung Shih-Chun Candice [Research Center for Environmental Changes, Academia Sinica, Taipei (Taiwan); Guo Yu-Liang Leon; Chang Ho-Yuan [Dept. of Environmental and Occupational Health, Coll. of Medicine, National Cheng Kung Univ., Tainan (Taiwan)

    2004-09-15

    In 1979, about two thousand people in central Taiwan were intoxicated by consumption of the rice oil that was contaminated with polychlorinated biphenyls (PCBs). This ''Yu-cheng'' incident was one of the two human tragedies which people ingested substantial amounts of PCBs within a short period of time. Some of the follow-up epidemiological studies focused on the children born to the exposed mothers, the Yu-cheng children, since they could be exposed to PCBs via breast-feeding or transplacental transfer. This report presents the results of the serum PCB levels of the 21 Yu-cheng children with a congener-specific analysis. On the other hand, fish consumption is thought to be the single most important exposure route to PCBs to the general public; thus, it is crucial to understand PCB exposure from fish consumption. In a separated study to assess PCB contamination in fish, PCB congener concentrations in tilapia (Oreochromis hybrids), the most popular fish in Taiwan, were evaluated. The consumption quantity of tilapia is the highest throughout the Island. It is mostly farmed in fresh water but can also be bred in saltwater. This report presents the concentrations and profiles in the serums of the Yu-cheng children. The congener profile is compared with PCB profile in the serum of Yu-cheng women reported previously and that in one of the potentially significant exposure source, tilapia, conducted in a separated work. Remarkable similarity between the profile of Yu-cheng children and that of the tilapia is revealed and discussed.

  15. La fuerza expresiva del deseo en Lan Yu de Stanley Kwan .

    Directory of Open Access Journals (Sweden)

    David L. Eng

    2007-12-01

    Full Text Available Stanley Kwan's Lan Yu configures the emergence of homosexuality in contemporary China far beyond its validation in recognizably Western identitarian terms: the affirmation of an existing but misrecognized minority population; the defense of sexual "perversion"; the positing of sexual freedom, legal recognition, and political rights; the justification of a bourgeois consumer lifestyle, or even the expression of a universalizing and bindingtove bringing togethertwo abstract individuáis. Instead, in Kwan's film, homosexuality and its expressive desire mark the emergence of a new humanism in (postsocialist China under the shadows of global capitalism and neoliberal development. Gays and lesbians, that is, are harbingers of a new modernity, helping to situate China in its proper place within a cosmopolitan globalized world. From this perspective, homosexuality functions as a critical tool for organizing and evaluating the historical continuities and ruptures among China's (semicolonial past, its revolutionary aspirations for a socialist modernity, and its present investments in a neoliberal capitalist world order.

  16. Formation of the oil composition of the Yu0 Bazhenov formation, Salym oil field

    Directory of Open Access Journals (Sweden)

    E.V. Soboleva

    2017-05-01

    Full Text Available The Bazhenov horizon of Western Siberia has been studied in considerable detail from different perspectives and different methods, a large number of studies have been devoted to a wide range of issues related to the lithological composition of rocks, their reservoir properties, the study of organic matter, properties and composition of oil at various analytical levels, and many others. This work is devoted to restoring conditions for the formation of oil properties and composition of the Yu0 Salym oil field, based mainly on the geochemical aspects of the study of oil changes both in area and in the section within the productive layer of Salym structure, using some geological data, such as structural plan for the reflecting horizon B (the roof of the Bazhenov formation, having a complex configuration, reservoir temperatures and pressure, well flow rates, and others. There is no single reservoir at the Salym field in the Yu0 formation. For the conclusions of the geological-geochemical interpretation, a sampling of 61 samples of oil from exploration, appraisal and production wells of the initial stages of production was used, since in the future when oil is extracted, the ecology in the deposits changes, and 21 samples of oil from other fields in the West Siberian oil and gas basin. Conventionally, three types of oils are distinguished, differing in their physicochemical parameters, group hydrocarbon and molecular composition. It was suggested that in addition to the own organic matter of the Bazhenov formation, hydrocarbon fluids of the Vasyugan, Tyumen formations and possibly Paleozoic rocks were involved in the formation of the oil composition. The flow of light liquid hydrocarbons and gases occurred along the zones of faults of different genesis and duration of existence.

  17. PREFACE: SANS-YuMO User Meeting at the Start-up of Scientific Experiments on the IBR-2M Reactor: Devoted to the 75th anniversary of Yu M Ostanevich's birth

    Science.gov (United States)

    Gordely, Valentin; Kuklin, Alexander; Balasoiu, Maria

    2012-03-01

    The Second International Workshop 'SANS-YuMO User Meeting at the Start-up of Scientific Experiments on the IBR-2M Reactor', devoted to the 75th anniversary of the birth of Professor Yu M Ostanevich (1936-1992), an outstanding neutron physicist and the founder of small-angle neutron scattering (field, group, and instrument) at JINR FLNPh, was held on 27-30 May at the Frank Laboratory of Neutron Physics. The first Workshop was held in October 2006. Research groups from different neutron centers, universities and research institutes across Europe presented more than 35 oral and poster presentations describing scientific and methodological results. Most of them were obtained with the help of the YuMO instrument before the IBR-2 shutdown in 2006. For the last four years the IBR-2 reactor has been shut down for refurbishment. At the end of 2010 the physical launch of the IBR-2M reactor was finally realized. Nowadays the small-angle neutron scattering (SANS) technique is applied to a wide range of scientific problems in condensed matter, soft condensed matter, biology and nanotechnology, and despite the fact that there are currently over 30 SANS instruments in operation worldwide at both reactor and spallation sources, the demand for beam-time is considerably higher than the time available. It must be remembered, however, that as the first SANS machine on a steady-state reactor was constructed at the Institute Laue Langevin, Grenoble, the first SANS instrument on a 'white' neutron pulsed beam was accomplished at the Joint Institute for Nuclear Research at the IBR-30 reactor, beamline N5. During the meeting Yu M Ostanevich's determinative and crucial contribution to the construction of spectrometers at the IBR-2 high-pulsed reactor was presented, as well as his contribution to the development of the time-of-flight (TOF) small-angle scattering technique, and a selection of other scientific areas. His leadership and outstanding scientific achievements in applications of the

  18. Teachers' Use of a Pedagogical Framework for Improvement in Mathematics Teaching: Case Studies from YuMi Deadly Maths

    Science.gov (United States)

    Carter, Merilyn; Cooper, Tom; Anderson, Robyn

    2016-01-01

    This paper describes the pedagogical framework used by YuMi Deadly Maths, a school change process used to improve mathematics teaching and thus enhance employment and life chances for socially disadvantaged students. The framework, called the RAMR cycle, is capable of being used by mathematics teachers for planning and delivering lessons and units…

  19. Serum concentrations and profiles of polychlorinated biphenyls in Taiwan Yu-cheng victims twenty years after the incident

    Energy Technology Data Exchange (ETDEWEB)

    Lung, S.-C. Candice [Research Center for Environmental Changes, Academia Sinica, Nankang, Taipei, Taiwan 115 (China); Guo, Y.-L.L. [Department of Environmental and Occupational Health, College of Medicine, National Cheng Kung University, 138 Sheng-Li Rd., Tainan, Taiwan 70428 (China); Chang, H.-Y.[Department of Environmental and Occupational Health, College of Medicine, National Cheng Kung University, 138 Sheng-Li Rd., Tainan, Taiwan 70428 (China)]. E-mail: h7154@mail.ncku.edu.tw

    2005-07-15

    In 1979, about 2000 people in central Taiwan were intoxicated via rice oil consumption that was contaminated with polychlorinated biphenyls (PCBs). This 'Yu-cheng' incident was one of the two known major human PCB intoxication episodes. Twenty years after the intoxication, serum samples of 435 Yu-cheng victims, 414 adults and 21 children, were collected. Sixteen PCB congeners were analyzed with a gas chromatograph-electron capture detector. We found the median concentration of total PCBs in the adult serum was 1500 ng/g lipid, still substantially higher than that of the general population in Taiwan (3.7-fold) and most seafood consumers in the world. Most of analyzed PCB congeners in children were below or around the detection limits. Congener no. 138, however, had the highest concentrations, approximately accounting for 55% and 29% in the child and adult groups, respectively. Given that PCBs are persistent organic pollutants and endocrine disruptors, the concentrations and congener-specific profiles regarding the Yu-cheng victims provide valuable information for the investigation of such chemicals in humans. - Total serum PCBs in the Yu-cheng adult victims twenty years after the incident were still higher than that of the general population in Taiwan.

  20. A series solution of the Falkner-Skan equation using the crocco-wang transformation

    Science.gov (United States)

    Asaithambi, Asai

    A direct series solution for the Falkner-Skan equation is obtained by first transforming the problem using the Crocco-Wang transformation. The transformation converts the third-order problem to a second-order two-point boundary value problem. The method first constructs a series involving the unknown skin-friction coefficient α. Then, α is determined by using the secant method or Newton’s method. The derivative needed for Newton’s method is also computed using a series derived from the transformed differential equation. The method is validated by solving the Falkner-Skan equation for several cases reported previously in the literature.

  1. Comments on "Adaptive resolution simulation in equilibrium and beyond" by H. Wang and A. Agarwal

    Science.gov (United States)

    Klein, R.

    2015-09-01

    Wang and Agarwal (Eur. Phys. J. Special Topics, this issue, 2015, doi: 10.1140/epjst/e2015-02411-2) discuss variants of Adaptive Resolution Molecular Dynamics Simulations (AdResS), and their applications. Here we comment on their report, addressing scaling properties of the method, artificial forcings implemented to ensure constant density across the full simulation despite changing thermodynamic properties of the simulated media, the possible relation between an AdResS system on the one hand and a phase transition phenomenon on the other, and peculiarities of the SPC/E water model.

  2. Security analysis of boolean algebra based on Zhang-Wang digital signature scheme

    International Nuclear Information System (INIS)

    Zheng, Jinbin

    2014-01-01

    In 2005, Zhang and Wang proposed an improvement signature scheme without using one-way hash function and message redundancy. In this paper, we show that this scheme exits potential safety concerns through the analysis of boolean algebra, such as bitwise exclusive-or, and point out that mapping is not one to one between assembly instructions and machine code actually by means of the analysis of the result of the assembly program segment, and which possibly causes safety problems unknown to the software

  3. Ning Wang, Making a Market Economy; Yan Sun, Corruption and Market in Contemporary China

    OpenAIRE

    Guiheux, Gilles

    2008-01-01

    These two works shed light on the conditions under which, in the course of the last 25 years, the command economy has been dismantled and gradually replaced by a market system in China . Yan Sun, a professor of political science, is interested in corruption from a double perspective, both at the macro and the micro level. Ning Wang, a neo-institutionalist economist, asks how, thanks to the reforms, a region (Jingzhou, south of Hubei ) has been converted to pisciculture. Corruption is a crucia...

  4. Security analysis of boolean algebra based on Zhang-Wang digital signature scheme

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Jinbin, E-mail: jbzheng518@163.com [School of Mathematics and Computer Science, Long Yan University, Longyan 364012 (China)

    2014-10-06

    In 2005, Zhang and Wang proposed an improvement signature scheme without using one-way hash function and message redundancy. In this paper, we show that this scheme exits potential safety concerns through the analysis of boolean algebra, such as bitwise exclusive-or, and point out that mapping is not one to one between assembly instructions and machine code actually by means of the analysis of the result of the assembly program segment, and which possibly causes safety problems unknown to the software.

  5. OPTIMIZATION-BASED APPROACH TO TILING OF FINITE AREAS WITH ARBITRARY SETS OF WANG TILES

    Directory of Open Access Journals (Sweden)

    Marek Tyburec

    2017-11-01

    Full Text Available Wang tiles proved to be a convenient tool for the design of aperiodic tilings in computer graphics and in materials engineering. While there are several algorithms for generation of finite-sized tilings, they exploit the specific structure of individual tile sets, which prevents their general usage. In this contribution, we reformulate the NP-complete tiling generation problem as a binary linear program, together with its linear and semidefinite relaxations suitable for the branch and bound method. Finally, we assess the performance of the established formulations on generations of several aperiodic tilings reported in the literature, and conclude that the linear relaxation is better suited for the problem.

  6. The genome and structural proteome of YuA, a new Pseudomonas aeruginosa phage resembling M6.

    Science.gov (United States)

    Ceyssens, Pieter-Jan; Mesyanzhinov, Vadim; Sykilinda, Nina; Briers, Yves; Roucourt, Bart; Lavigne, Rob; Robben, Johan; Domashin, Artem; Miroshnikov, Konstantin; Volckaert, Guido; Hertveldt, Kirsten

    2008-02-01

    Pseudomonas aeruginosa phage YuA (Siphoviridae) was isolated from a pond near Moscow, Russia. It has an elongated head, encapsulating a circularly permuted genome of 58,663 bp, and a flexible, noncontractile tail, which is terminally and subterminally decorated with short fibers. The YuA genome is neither Mu- nor lambda-like and encodes 78 gene products that cluster in three major regions involved in (i) DNA metabolism and replication, (ii) host interaction, and (iii) phage particle formation and host lysis. At the protein level, YuA displays significant homology with phages M6, phiJL001, 73, B3, DMS3, and D3112. Eighteen YuA proteins were identified as part of the phage particle by mass spectrometry analysis. Five different bacterial promoters were experimentally identified using a promoter trap assay, three of which have a sigma54-specific binding site and regulate transcription in the genome region involved in phage particle formation and host lysis. The dependency of these promoters on the host sigma54 factor was confirmed by analysis of an rpoN mutant strain of P. aeruginosa PAO1. At the DNA level, YuA is 91% identical to the recently (July 2007) annotated phage M6 of the Lindberg typing set. Despite this level of DNA homology throughout the genome, both phages combined have 15 unique genes that do not occur in the other phage. The genome organization of both phages differs substantially from those of the other known Pseudomonas-infecting Siphoviridae, delineating them as a distinct genus within this family.

  7. Maps of Relocation and Poems of Tang Dynasty Poets: Li Bai, Du Fu, and Han Yu

    Directory of Open Access Journals (Sweden)

    羅鳳珠、白璧玲、廖泫銘、范毅軍 、鄭錦全 Feng-Ju Lo,Pi-Ling Pai,Hsiung-Ming Liao,I-Chun Fan,Chin-Chuan Cheng

    2014-04-01

    Full Text Available Geographic environments affect literary contents and genre and thus, since ancient times, geographical area has been used to classify Chinese literature. In 1936 Liang Qichao was keenly aware of the relationship between literature and geography and brought up the idea of “literarygeography”. In 1979 Professor Chen Zhengxiang produced maps of birthplaces of Tang and Song poets to show the shift of Chinese cultural center from north to south. Furthermore, in the pastdecade, the attention to research in literary geography and geographical distribution of writersgradually increased. However, most studies focused on geographical distribution of birthplaces of writers and very few focused on the relationship between poets’ journey and the contents of their writings and their geographic environment. Meanwhile, geographic information system and aerialphotography have developed quickly and have become useful tools for the study of literary geography.Since then, the academic circles in Taiwan have built a solid foundation in this area. While Li Baiand Du Fu were called poetic immortal and poetic sage of the middle and end periods of the heydayof Tang Dynasty, respectively, Han Yu advocated the classical Chinese movement and becameone of the eight great authors of Tang and Song dynasties. Han Yu was also the best representative of Middle Tang poets. While the styles of these three poets differed from each other, they held key positions in the development and evolution of Tang poetry. Their footprints spread all over the countryand greatly affected later developments and contemporary of poetry. This project makes use of the digital Tang Dynasty maps by Tan Qixiang, Tang Dynasty transportation route maps by Yan Gengwang,aerial maps, the All Tang Poems, and chronicles of the poets to build the three poets’ relocation maps and study their poetic literature, language, geography, and interactions with others, in hopesof opening a new research direction

  8. Fabrication of welded pipes of the KhN45Yu alloy

    International Nuclear Information System (INIS)

    Lyapunov, A.I.; Krichevskij, E.M.; L'vov, V.N.; Kozlov, N.N.; Kireeva, T.S.

    1977-01-01

    A highly heat-resistant KhN45Yu (EP 747) alloy has been developed; the alloy is designed to withstand prolonged service in the temperature range of 1000-1300 deg C, or short-term service at 1300-1400 deg C. The satisfactory ductility and good weldability of the alloy have made it possible to obtain sheets and pipes (32 x 2.0 mm) by argon arc welding. The ductility of pipes from EP 747 alloy exceeds that of pipes from KhN78T (EI 435) alloy by 5.10%, the strength being approximately equal. In regard to strength the welded joint differs little from the base metal. The ductility characteristics up to 900 deg C are also equal, since failure occurs in the base metal. At higher temperatures the welded joint fails in the metal of the weld, and its ductility drops sharply. The grain size of the base metal corresponds to No. 3-4. The welded joint has a cast structure with a grain size larger than No. 1, but its ductility characteristics are satisfactory. This structure ensures an increased long-term strength of the material at 1000-1200 deg C

  9. Kondo Effect of U Impurities in Dilute (YU)2Zn17

    Science.gov (United States)

    Takagi, Shigeru; Suzuki, Hiroyuki; Anzai, Kousuke

    2001-10-01

    Extending previous work on single-site properties of U ions in (LaU)2Zn17, we have investigated, from ρ(T), χ(T) and Cp(T) on single crystals, (Y1-xUx)2Zn17 with x=0.025 and 0.050, which has almost the same unit-cell volume as an antiferromagnetic heavy-electron compound U2Zn17. Remarkable features in the dilute-impurity limit have been clarified, which include Kondo behavior of ρ(T), large and almost isotropic χimp(T), and strongly enhanced Cimp(T)/T with gigantic γimp=2.02 2.05 J/K2·mole-U as T→0 due to a low characteristic energy-scale of the system. It is shown that gross features of the data are explained in terms of the conventional Kondo effect in the presence of the crystal field with the U3+ \\varGamma6 doublet ground state. It is also shown that the variation of γ with the unit-cell volume in related systems is not explained as a volume effect on TK and that even the behavior of fictitious “paramagnetic” U2Zn17 is not described as a collection of U impurities in dilute (YU)2Zn17.

  10. FY 1999 Report on overseas geological structure surveys. Joint Japan-China Yu Xian exploitation project; 1999 nendo kaigai chishitsu kozo nado chosa hokokusho. Nippon Chugoku sekitan kyodo tansa Yu Xian project

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    This project is based on the (agreement of the joint exploitation project for Yu Xian block in Yu Xian coal mine, Province of Hepei by Japan's NEDO and China's Coal Geological Bureau), signed on October 4, 1996. The joint project mainly comprises seismic exploitation and test drilling, Japan being mainly responsible for the former and China for the latter. The final report will be drawn jointly for the geological survey results necessary for designing coal mines. The Yu Xian block contains the Jurassic coal seams, which are covered by the Quaternary bed and not exposed to the surface. The Quaternary bed base is 50 to 400 m deep from the surface, and coal seams are 300 to 700 m deep also from the surface. A total of 11 coal seams are located in the Xiahuayuan strata as the coal-bearing strata. The first and fifth seams are most promising ones. In particular, the fifth seam is thick (0.2 to 6.91 m thick) and distributed throughout the block. It is estimated that 8 coal seams have a total coal quantity of approximately 346 million tons. (NEDO)

  11. Surface adsorption of lattice HP proteins: Thermodynamics and structural transitions using Wang-Landau sampling

    International Nuclear Information System (INIS)

    Li Yingwai; Landau, David P; Wüst, Thomas

    2012-01-01

    Wang-Landau sampling has been applied to investigate the thermodynamics and structural properties of a lattice hydrophobic-polar heteropolymer (the HP protein model) interacting with an attractive substrate. For simplicity, we consider a short HP sequence consisting of only 36 monomers interacting with a substrate which attracts all monomers in the sequence. The conformational “phase transitions” have been identified by a canonical analysis of the specific heat and suitable structural observables. Three major “transitions”, namely, adsorption, hydrophobic core formation and “flattening” of adsorbed structures, are observed. Depending on the surface attractive strength relative to the intra-protein attraction among the H monomers, these processes take place in different sequences upon cooling.

  12. Chen-Nester-Tung quasi-local energy and Wang-Yau quasi-local mass

    Science.gov (United States)

    Liu, Jian-Liang; Yu, Chengjie

    2017-10-01

    In this paper, we show that the Chen-Nester-Tung (CNT) quasi-local energy with 4D isometric matching references is closely related to the Wang-Yau (WY) quasi-local energy. As a particular example, we compute the second variation of the CNT quasi-local energy for axially symmetric Kerr-like spacetimes with axially symmetric embeddings at the obvious critical point (0 , 0) and find that it is a saddle critical point in most of the cases. Also, as a byproduct, we generalize a previous result about the coincidence of the CNT quasi-local energy and Brown-York mass for axially symmetric Kerr-like spacetimes by Tam and the first author Liu and Tam (2016) to general spacetimes.

  13. Interview with Xiaoli Wang PhD winner of CACA 2016 Young Investigator Award

    Directory of Open Access Journals (Sweden)

    Xiaoli Wang

    2016-07-01

    Full Text Available Xiaoli Wang is currently an R&D Senior Scientist in Agilent’s HPLC instrument R&D group at Agilent Technologies, Waldbronn, Germany. Prior to this, he was an R&D manager in Agilent’s CrossLab Group in the US focusing on development of novel chromatographic columns. He has a B.S. degree in Chemistry from Peking University, Beijing China and a PhD. degree in Analytical Chemistry from the University of Minnesota in 2006. He started his industrial career in the pharmaceutical industry at AstraZeneca for four years before joining Agilent Technologies in 2010. Recently, he won the prestigious 2016 Young Investigator Award from Chinese American Chromatography Association (CACA. This interview was conducted by Roland J.W. Meesters PhD, Editor-in-Chief of Journal of Applied Bioanalysis.

  14. Study of Ge loss during Ge condensation process

    International Nuclear Information System (INIS)

    Xue, Z.Y.; Di, Z.F.; Ye, L.; Mu, Z.Q.; Chen, D.; Wei, X.; Zhang, M.; Wang, X.

    2014-01-01

    Ge loss during Ge condensation process was investigated by transmission electron microscopy, Raman spectroscopy, secondary ion mass spectrometry and Rutherford backscattering spectrometry. This work reveals that Ge loss can be attributed to the Ge oxidation at SiO 2 /SiGe interface, Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface. During Ge condensation process, with the increase of the Ge content, the Si atoms become insufficient for selective oxidation at the oxide/SiGe interface. Consequently, the Si and Ge are oxidized simultaneously. When the Ge composition in SiGe layer increases further and approaches 100%, the Ge atoms begin to diffuse into the top SiO 2 layer and buried SiO 2 layer. However, the X-ray photoelectron spectrometry analysis manifests that the chemical states of the Ge in top SiO 2 layer are different from those in buried SiO 2 layer, as the Ge atoms diffused into top SiO 2 layer are oxidized to form GeO 2 in the subsequent oxidation step. With the increase of the diffusion time, a quantity of Ge atoms diffuse through buried SiO 2 layer and pile up at buried SiO 2 /Si interface due to the interfacial trapping. The SiO 2 /Si interface acts like a pump, absorbing Ge from a Ge layer continuously through a pipe-buried SiO 2 layer. With the progress of Ge condensation process, the quantity of Ge accumulated at SiO 2 /Si interface increases remarkably. - Highlights: • Ge loss during Ge condensation process is attributed to the Ge oxidation at SiO 2 /SiGe interface. • Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface • When Ge content in SiGe layer approaches 100%, Ge diffusion into the SiO 2 layer is observed. • Ge then gradually diffuses through buried SiO 2 layer and pile up at SiO 2 /Si interface

  15. Language Personality of the Publicist: Rhetorical and Stylistic Canon (Yu. Senkevich “To “Ra” Across the Atlantic”

    Directory of Open Access Journals (Sweden)

    Olga V. Shatalova

    2017-10-01

    Full Text Available In article the communicative and linguistic parameters of the speech of the publicist of the XX century Yu. Senkevich which are declared as a sample for formation of the language personality in the conditions of development of the modern information and communicative environment are designated. On the example of the analysis of the book «On “Ra” through Atlantic» locates the fact of that Yu.N. Senkevich’s creativity corresponds to the main criteria of popular scientific journalism: high degree of reliability, authoritativeness of the publicist; dynamism, dramatic nature, intelligence of a statement. The unostentatious enlightenment based on updating of scientific knowledge for the addressee and a dialogization of a publicistic discourse, the high level of psychological and philosophical generality, the declaration of humanistic values form specific rhetoric which is supported by the formal and grammatical organization of the speech of the publicist. Priority of syntactic designs of a certain type, stylistic ladders and figures – dynamism of a statement and scale of representation of material define. The humour and easy self-irony as significant characteristics of the language personality define a basis of the rhetorical and stylistic canon realized in publicistic works Yu.N. Senkevich – «the human view of people and society» that in the modern information and communicative environment becomes a necessary reference point.

  16. From Wang-Chen System with Only One Stable Equilibrium to a New Chaotic System Without Equilibrium

    Science.gov (United States)

    Pham, Viet-Thanh; Wang, Xiong; Jafari, Sajad; Volos, Christos; Kapitaniak, Tomasz

    2017-06-01

    Wang-Chen system with only one stable equilibrium as well as the coexistence of hidden attractors has attracted increasing interest due to its striking features. In this work, the effect of state feedback on Wang-Chen system is investigated by introducing a further state variable. It is worth noting that a new chaotic system without equilibrium is obtained. We believe that the system is an interesting example to illustrate the conversion of hidden attractors with one stable equilibrium to hidden attractors without equilibrium.

  17. M.Yu. Lermontov’s linguistic/literary personality through perspective of linguistic personality perception by philologist V.V. Vinogrado

    Directory of Open Access Journals (Sweden)

    Larisa N. Kuznetsova

    2011-04-01

    Full Text Available The article considers M.Yu. Lermontov’s linguistic / literary personality through perspective of linguistic personality perception by Great Russian scientist-philologist and linguist, Academician V.V. Vinogradov.

  18. Pengaruh insektisida deltametrin terhadap perilaku orientasi parasitoid Anagrus nilaparvatae (Pang et Wang (Hymenoptera: Mymaridae

    Directory of Open Access Journals (Sweden)

    Araz Meilin

    2016-09-01

    Full Text Available Host searching behaviour by a parasitoid includes orientation to the volatile compounds (odor relesead by host or host plant. The aim of this study was to determine the changes in the orientation behaviour of Anagrus nilaparvatae (Pang et Wang, the egg parasitoid of rice brown planthoppers (Nilaparvata lugens (Stål, after being exposed to sublethal concentrations of deltamethrin. The impact of residue on plants to the behaviour of parasitoid was also studied. The sublethal concentrations (LC10 and LC40 used were 0.023 ppm and 2.235 ppm, respectively. Deltamethrin applied to the rice plants were 12.5 ppm and 6.25 ppm, and its effect was observed at 3 hours, 1, 3 and 7 days after application. Orientation behavior was studied using Y-tube olfactometer. Application of deltamethrin at subletal concentration reduced the ability of surviving A. nilaparvatae to detect odors (volatile ompounds released by the host, N. lugens. The higher the concentration of deltamethrin applied to the parasitoid or to the rice plants, the more prominent effect observed in the changing in the parasitoid behavious, in particular disruption to the parasitoid’s orientation to find their host. As consequences, effects of deltamethrin may lead to reduce the effectiveness of A. nilaparvatae as biological control agents in the field as a result of declining their searching capacity. 

  19. Explicit and exact nontraveling wave solutions of the (3+1)-dimensional potential Yu-Toda-Sasa-Fukuyama equation

    Science.gov (United States)

    Yuan, Na

    2018-04-01

    With the aid of the symbolic computation, we present an improved ( G ‧ / G ) -expansion method, which can be applied to seek more types of exact solutions for certain nonlinear evolution equations. In illustration, we choose the (3 + 1)-dimensional potential Yu-Toda-Sasa-Fukuyama equation to demonstrate the validity and advantages of the method. As a result, abundant explicit and exact nontraveling wave solutions are obtained including two solitary waves solutions, nontraveling wave solutions and dromion soliton solutions. Some particular localized excitations and the interactions between two solitary waves are researched. The method can be also applied to other nonlinear partial differential equations.

  20. Supercavitation Advances and Perspectives A collection dedicated to the 70th jubilee of YuN Savchenko

    CERN Document Server

    2012-01-01

    This collection is dedicated to the 70th jubilee of Yu. N. Savchenko, and presents experimental, theoretical, and numerical investigations written by an international group of well-known authors. The contributions solve very important problems of the high-speed hydrodynamics, such as supersonic motion in water, drag diminishing, dynamics and stability of supercavitating vehicles, water entry and hydrodynamic performances of hydrofoils, ventilated cavities after a disc and under the ship bottom. The  book is written for researches, scientists, engineers, and students interested in problems of hydromechanics.

  1. Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

    Science.gov (United States)

    Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

    2008-07-01

    Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

  2. FY 2000 report on the survey of the overseas geological structure. Japan-China joint coal exploration - Yu Xian project; 2000 nendo kaigai chishitsu kozo nado chosa hokokusho. Nippon Chugoku sekitan kyodo tansa Yu Xian project

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The geological survey was carried out which is needed for coal mine design in the Yu Xian coal mine area, Yu Xian coal field, Hebei province, China. The term of survey was 5 years from 1996 to 2000. Activities are mainly for seismic survey and boring survey. Japan was in charge of the seismic survey, and China in charge of the boring survey. Both attained the goal. The results of the activities were summed up in the following 7 items: 1) outline of the survey; 2) general investigation; 3) state of the exploration related materials/machinery; 4) field survey; 5) items of survey; 6) results of the survey; 7) conclusion. In 6), the geological analysis, coal quality survey and coal amount survey were conducted. In the geological analysis, analyzed were the succession of strata, geological structure, and the situation of existence of coal seams. In 7), the following were made clear: geological structure of the survey area, coal seam, coal quality, hydrological geology, other conditions of drilling technology, and coal amount. The coal amount was 328.34 million tons in a total of A/B/C class coals. The total coal amount of Nos. 1 and 5 coal seams was 259.79 million tons, which was 79.1% of the total coal amount in all area. The average thickness of Nos. 1 and 5 coal seams, which are the main minable coal seams, was 3.10m and 2.66m, respectively. (NEDO)

  3. Yuánmíng Yuán en el siglo XVIII: Arte entre la diplomacia y la filosofía; entre Europa y Pekín

    Directory of Open Access Journals (Sweden)

    Pedro Luengo

    2016-01-01

    Full Text Available Este estudio pretende probar que el Yuánmíng Yuán fue diseñado como una representación del macrocosmos imperial a partir de la filosofía de la China de Qianlong. Para ello se valorará la función simbólica de los palacios de estilo europeo a partir de las descripciones de embajadas orientales y occidentales. Esta información se pondrá en relación con las diferentes representaciones pictóricas del jardín, conservadas tanto en grabados o acuarelas como en pinturas murales. A partir de toda esta información se pretende valorar su utilización en las visitas de diferentes legados diplomáticos extranjeros. En concreto, se intenta comprobar que los palacios europeos se utilizaron eminentemente para impresionar a las misiones orientales, y no tanto a las occidentales.

  4. Review on the Book: Pochekaev R.Yu. The Golden Horde Law (Kazan, 2009. 260 p. » 231

    Directory of Open Access Journals (Sweden)

    E.G. Sayfetdinova

    2015-06-01

    Full Text Available This paper contains a review of the R.Yu. Pochekaev’s book “The Golden Horde Law”. The reviewer points out that the Pochekaev’s book is a significant academic research in both the study of the Golden Horde history and the law system of the Eurasian Turkic-Mongol peoples. This book is published by the Center for Research on the Golden Horde Civilization at the Sh.Marjani Institute of History of the Academy of Sciences of the Republic of Tatarstan. For several years, the author of this book, R.Yu. Pochekaev, has been concerned with the the history of the Golden Horde State and its law system. He has published a number of works on this topic, the main conclusions of which are reflected in this generalizing work. The study is based on a wide range of sources (annals and chronicles, memoirs of contemporaries, bureaucratic and numismatic materials and numerous studies including the works of foreign specialists in the original language. In his book, the author organically combines the latest achievements of research on both the Golden Horde history and theory and history of law. The book will be of interest to experts of the Golden Horde history and Orientalists, who are often faced with the legal aspects of the material under study.

  5. Becoming an International Scientist in South Korea: Ho Wang Lee’s Research Activity about Epidemic Hemorrhagic Fever

    Directory of Open Access Journals (Sweden)

    Miyoung SHIN

    2017-04-01

    Full Text Available In the 1960-70s, South Korea was still in the position of a science latecomer. Although the scientific research environment in South Korea at that time was insufficient, there was a scientist who achieved outcomes that could be recognized internationally while acting in South Korea. He was Ho Wang Lee(1928~ who found Hantann Virus that causes epidemic hemorrhagic fever for the first time in the world. It became a clue to identify causative viruses of hemorrhagic diseases that were scattered here and there throughout the world. In addition, these outcomes put Ho Wang Lee on the global center of research into epidemic hemorrhagic fever. This paper examines how a Korean scientist who was in the periphery of virology could go into the central area of virology. Also this article shows the process through which the virus found by Ho Wang Lee was registered with the international academia and he proceeded with follow-up research based on this progress to reach the level at which he generalized epidemic hemorrhagic fever related studies throughout the world. While he was conducting the studies, experimental methods that he had never experienced encountered him as new difficulties. He tried to solve the new difficulties faced in his changed status through devices of cooperation and connection. Ho Wang Lee’s growth as a researcher can be seen as well as a view of a researcher that grew from a regional level to an international level and could advance from the area of non-mainstream into the mainstream. This analytic tool is meaningful in that it can be another method of examining the growth process of scientists in South Korea or developing countries.

  6. Influence of yield on in vitro accumulation of aflatoxins in pecan (Carya illinoensis (Wang.) K. Koch) nutmeats.

    Science.gov (United States)

    McMeans, J L

    1983-02-01

    Pecans were harvested from trees (Carya illinoensis (Wang.) K. Koch) in November of 1977 through 1979. Kernel meals from high-, medium-, and low-yielding trees were inoculated with a spore suspension of Aspergillus parasiticus and incubated for 7 days at 25 degrees C. Significant differences in aflatoxin accumulation were found among the three substrates, with a direct correlation between high aflatoxin concentration and tree yield.

  7. Influence of yield on in vitro accumulation of aflatoxins in pecan (Carya illinoensis (Wang.) K. Koch) nutmeats.

    OpenAIRE

    McMeans, J L

    1983-01-01

    Pecans were harvested from trees (Carya illinoensis (Wang.) K. Koch) in November of 1977 through 1979. Kernel meals from high-, medium-, and low-yielding trees were inoculated with a spore suspension of Aspergillus parasiticus and incubated for 7 days at 25 degrees C. Significant differences in aflatoxin accumulation were found among the three substrates, with a direct correlation between high aflatoxin concentration and tree yield.

  8. Energy levels of germanium, Ge I through Ge XXXII

    International Nuclear Information System (INIS)

    Sugar, J.; Musgrove, A.

    1993-01-01

    Atomic energy levels of germanium have been compiled for all stages of ionization for which experimental data are available. No data have yet been published for Ge VIII through Ge XIII and Ge XXXII. Very accurate calculated values are compiled for Ge XXXI and XXXII. Experimental g-factors and leading percentages from calculated eigenvectors of levels are given. A value for the ionization energy, either experimental when available or theoretical, is included for the neutral atom and each ion. section

  9. HP Ge planar detectors

    International Nuclear Information System (INIS)

    Gornov, M.G.; Gurov, Yu.B.; Soldatov, A.M.; Osipenko, B.P.; Yurkowski, J.; Podkopaev, O.I.

    1989-01-01

    Parameters of planar detectors manufactured of HP Ge are presented. The possibilities to use multilayer spectrometers on the base of such semiconductor detectors for nuclear physics experiments are discussed. It is shown that the obtained detectors including high square ones have spectrometrical characteristics close to limiting possible values. 9 refs.; 3 figs.; 1 tab

  10. Entropic sampling of simple polymer models within Wang-Landau algorithm

    International Nuclear Information System (INIS)

    Vorontsov-Velyaminov, P N; Volkov, N A; Yurchenko, A A

    2004-01-01

    In this paper we apply a new simulation technique proposed in Wang and Landau (WL) (2001 Phys. Rev. Lett. 86 2050) to sampling of three-dimensional lattice and continuous models of polymer chains. Distributions obtained by homogeneous (unconditional) random walks are compared with results of entropic sampling (ES) within the WL algorithm. While homogeneous sampling gives reliable results typically in the range of 4-5 orders of magnitude, the WL entropic sampling yields them in the range of 20-30 orders and even larger with comparable computer effort. A combination of homogeneous and WL sampling provides reliable data for events with probabilities down to 10 -35 . For the lattice model we consider both the athermal case (self-avoiding walks, SAWs) and the thermal case when an energy is attributed to each contact between nonbonded monomers in a self-avoiding walk. For short chains the simulation results are checked by comparison with the exact data. In WL calculations for chain lengths up to N = 300 scaling relations for SAWs are well reproduced. In the thermal case distribution over the number of contacts is obtained in the N-range up to N = 100 and the canonical averages - internal energy, heat capacity, excess canonical entropy, mean square end-to-end distance - are calculated as a result in a wide temperature range. The continuous model is studied in the athermal case. By sorting conformations of a continuous phantom freely joined N-bonded chain with a unit bond length over a stochastic variable, the minimum distance between nonbonded beads, we determine the probability distribution for the N-bonded chain with hard sphere monomer units over its diameter a in the complete diameter range, 0 ≤ a ≤ 2, within a single ES run. This distribution provides us with excess specific entropy for a set of diameters a in this range. Calculations were made for chain lengths up to N = 100 and results were extrapolated to N → ∞ for a in the range 0 ≤ a ≤ 1.25

  11. Morphology and anatomical structure of the larval salt gland of ...

    African Journals Online (AJOL)

    Ezedom Theresa

    2013-10-09

    Oct 9, 2013 ... the morphology and fine structure of the ion transporting epithelium ... The general structure of the salt gland of nauplii cultured at 180 g/L disappeared. ...... Wu G, Zhang H, Sun J, Liu F, Ge X, Chen WH, Yu, J, Wang W (2011).

  12. Si/Ge intermixing during Ge Stranski–Krastanov growth

    Directory of Open Access Journals (Sweden)

    Alain Portavoce

    2014-12-01

    Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.

  13. Transcriptomic Profiling Reveals Complex Molecular Regulation in Cotton Genic Male Sterile Mutant Yu98-8A.

    Directory of Open Access Journals (Sweden)

    Weiping Fang

    Full Text Available Although cotton genic male sterility (GMS plays an important role in the utilization of hybrid vigor, its precise molecular mechanism remains unclear. To characterize the molecular events of pollen abortion, transcriptome analysis, combined with histological observations, was conducted in the cotton GMS line, Yu98-8A. A total of 2,412 genes were identified as significant differentially expressed genes (DEGs before and during the critical pollen abortion stages. Bioinformatics and biochemical analysis showed that the DEGs mainly associated with sugars and starch metabolism, oxidative phosphorylation, and plant endogenous hormones play a critical and complicated role in pollen abortion. These findings extend a better understanding of the molecular events involved in the regulation of pollen abortion in genic male sterile cotton, which may provide a foundation for further research studies on cotton heterosis breeding.

  14. Retraction RETRACTION of "Methylation of the RASSFIA promoter in breast cancer" by Y. Ji, H.H. Jin, M.D. Wang, W.X. Cao, J.L. Bao - Genet. Mol. Res. 15 (2): gmr.15028261 (2016) - DOI: 10.4238/gmr.15028261.

    Science.gov (United States)

    Ji, Y; Jin, H H; Wang, M D; Cao, W X; Bao, J L

    2016-10-07

    The retracted article is: Ji Y, Jin HH, Wang MD, Cao WX, et al. (2016). Methylation of the RASSFIA promoter in breast cancer. Genet. Mol. Res. 15: gmr.15028261. There are significant parts of this article (particularly, in the discussion section) that are copied from "Methylation of HIN-1, RASSF1A, RIL and CDH13 in breast cancer is associated with clinical characteristics, but only RASSF1A methylation is associated with outcome", by Jia Xu, Priya B Shetty, Weiwei Feng, Carol Chenault, Robert C Bast Jr, Jean-Pierre J Issa, Susan G Hilsenbeck and Yinhua Yu, published in BMC Cancer 2012; 12: 243. DOI: 10.1186/1471-2407-12-243. The first paragraphs of both discussions are identical. This is concerning. The abstract and introduction sections have much of their text plagiarized. Overall, there is high plagiarism detected. The GMR editorial staff was alerted and after a thorough investigation, we have strong reason to believe that the peer review process was failure and, after review and contacting the authors, the editors of Genetics and Molecular Research decided to retract the article in accordance with the recommendations of the Committee on Publication Ethics (COPE). The authors and their institutions were advised of this serious breach of ethics.

  15. III International Conference on Small Angle Neutron Scattering dedicated to the 80 anniversary of Yu.M. Ostanevich

    International Nuclear Information System (INIS)

    2017-01-01

    Preface “Among the many well-known fundamental and applied consequences of neutron discovery, one of the first was the emergence of structural neutron diffraction - one of the methods for studying the spatial structure of condensed matter at the atomic level. Investigating the dynamics of biological macromolecules by neutron diffraction methods is an area that is almost untouched. We believe that also in this direction one should expect rapid progress.” Yu.M.Ostanevich and I.N.Serdyuk Uspekhi Fizicheskih Nauk (1982) More than 30 years after Ostanevich and Serdyuk reviewed the then 50 years from the neutron discovery, we are happy to support their statement and prediction by reporting on the further progress in the field of neutron scattering research. Frank Laboratory of Neutron Physics has organized the III International Conference on Small Angle Neutron Scattering (YuMO2016) that was – not coincidently – dedicated to the 80th anniversary of Ostanevich. Yuriy Mechislavovich Ostanevich (1936–1992) has had a determinative and crucial contribution to the construction of spectrometers at the pulsed reactor IBR in Dubna, Russia. He contributed in particular to the development of time-of-flight small-angle neutron scattering (SANS) technique, and the selection of advanced scientific areas for its application. The SANS instrument at the IBR-2 reactor is called YuMO in his honour. The Ostanevich’s leadership and outstanding scientific achievements in SANS studies of polyelectrolytes, small molecules, fractals, metallic glasses, macromolecules, polymers, etc., were recognized also by a number of awards including the State Prize of the Russian Federation in 2000. To this end of course, we should not forget mentioning the contribution of close collaborators of Ostanevich: Laszlo Cser, Josef Plestil as well as Alexander Kunchenko, Vadim Bezzabotnov and Nikolay Gorski. The YuMO2016 conference focused on providing opportunities to discuss various possibilities of

  16. ¿Cómo podemos usar el móvil para comunicarnos mediante el pensamiento? Entrevista con Yijun Wang

    Directory of Open Access Journals (Sweden)

    Ángel Correa

    2011-01-01

    Full Text Available Un equipo de neurocientíficos ha desarrollado una interfaz cerebro ordenador basada en un teléfono móvil. Las personas con movilidad reducida podrían beneficiarse de este innovador sistema en un futuro próximo. En el experimento que aparece en la fotografía de portada, el participante utiliza únicamente su pensamiento para marcar un número de teléfono. Ciencia Cognitiva ha entrevistado al Dr. Yijun Wang, ingeniero biomédico de la Universidad de California en San Diego, que trabaja en este proyecto.

  17. Systematic errors due to linear congruential random-number generators with the Swendsen-Wang algorithm: a warning.

    Science.gov (United States)

    Ossola, Giovanni; Sokal, Alan D

    2004-08-01

    We show that linear congruential pseudo-random-number generators can cause systematic errors in Monte Carlo simulations using the Swendsen-Wang algorithm, if the lattice size is a multiple of a very large power of 2 and one random number is used per bond. These systematic errors arise from correlations within a single bond-update half-sweep. The errors can be eliminated (or at least radically reduced) by updating the bonds in a random order or in an aperiodic manner. It also helps to use a generator of large modulus (e.g., 60 or more bits).

  18. Predictive Control of the Blood Glucose Level in Type I Diabetic Patient Using Delay Differential Equation Wang Model.

    Science.gov (United States)

    Esna-Ashari, Mojgan; Zekri, Maryam; Askari, Masood; Khalili, Noushin

    2017-01-01

    Because of increasing risk of diabetes, the measurement along with control of blood sugar has been of great importance in recent decades. In type I diabetes, because of the lack of insulin secretion, the cells cannot absorb glucose leading to low level of glucose. To control blood glucose (BG), the insulin must be injected to the body. This paper proposes a method for BG level regulation in type I diabetes. The control strategy is based on nonlinear model predictive control. The aim of the proposed controller optimized with genetics algorithms is to measure BG level each time and predict it for the next time interval. This merit causes a less amount of control effort, which is the rate of insulin delivered to the patient body. Consequently, this method can decrease the risk of hypoglycemia, a lethal phenomenon in regulating BG level in diabetes caused by a low BG level. Two delay differential equation models, namely Wang model and Enhanced Wang model, are applied as controller model and plant, respectively. The simulation results exhibit an acceptable performance of the proposed controller in meal disturbance rejection and robustness against parameter changes. As a result, if the nutrition of the person decreases instantly, the hypoglycemia will not happen. Furthermore, comparing this method with other works, it was shown that the new method outperforms previous studies.

  19. Macroscopically constrained Wang-Landau method for systems with multiple order parameters and its application to drawing complex phase diagrams

    Science.gov (United States)

    Chan, C. H.; Brown, G.; Rikvold, P. A.

    2017-05-01

    A generalized approach to Wang-Landau simulations, macroscopically constrained Wang-Landau, is proposed to simulate the density of states of a system with multiple macroscopic order parameters. The method breaks a multidimensional random-walk process in phase space into many separate, one-dimensional random-walk processes in well-defined subspaces. Each of these random walks is constrained to a different set of values of the macroscopic order parameters. When the multivariable density of states is obtained for one set of values of fieldlike model parameters, the density of states for any other values of these parameters can be obtained by a simple transformation of the total system energy. All thermodynamic quantities of the system can then be rapidly calculated at any point in the phase diagram. We demonstrate how to use the multivariable density of states to draw the phase diagram, as well as order-parameter probability distributions at specific phase points, for a model spin-crossover material: an antiferromagnetic Ising model with ferromagnetic long-range interactions. The fieldlike parameters in this model are an effective magnetic field and the strength of the long-range interaction.

  20. FY 2000 survey of the geological structure overseas, etc. Japan-China joint coal exploration - Yu Xian project; 2000 nendo kaigai chishitsu kozo nado chosa - futai shiryoshu. Nippon Chugoku sekitan kyodo tansa Yu Xian project

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    This data book summarized the proceedings and the technical report of the management committee on the Japan-China geological structure survey based on the consultation concluded between NEDO and China's bureau of coal field geology and a report meeting on the Yu Xian project. In the exploration, conducted were the boring survey of 10 boreholes, seismic survey of 2D (71 traverse lines, 180.105km) and 3D (1.5km{sup 2}), VSP (6 holes (345 shots)) and the low velocity band survey (2,072 shots). The geological structure of the area presented the syncline structure with a gentle line associated with foldings and a number of faults and was classified into the medium class or the class of a little complication in the Chinese standard. The number of the faults confirmed in this exploration totaled 57. Coal reserves by coal seam were 157.22 million tons at No. 5 seam and 102.57 million tons at No. 1 seam. The total amount of the two seams was 79.1% of the total coal amount in all area. The coal quality of Nos. 1 and 5 was brown coal - flame coal in the Chinese classification, and subbituminous coal B - subbituminous coal C in the ASTM classification. The coal, however, cannot be used for process raw coal. There is a technical potentiality of the fixed bed pressurized gasification. (NEDO)

  1. Ge/SiGe superlattices for nanostructured thermoelectric modules

    International Nuclear Information System (INIS)

    Chrastina, D.; Cecchi, S.; Hague, J.P.; Frigerio, J.; Samarelli, A.; Ferre–Llin, L.; Paul, D.J.; Müller, E.; Etzelstorfer, T.; Stangl, J.; Isella, G.

    2013-01-01

    Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices

  2. Structure of 78Ge from the 76Ge(t,p)78Ge reaction

    International Nuclear Information System (INIS)

    Ardouin, D.; Lebrun, C.; Guilbault, F.; Remaud, B.; Vergnes, M.N.; Rotbard, G.; Kumar, K.

    1978-01-01

    The 76 Ge(t,p) 78 Ge reaction has been performed at a bombarding energy of 17 MeV. Thirteen excited states below 3 MeV excitation are reported with Jsup(π) values obtained by comparison to DWBA analysis. A comparison to a dynamical deformation theory is made and the results suggest 78 Ge is a transitional nucleus nearing spherical shape due to the proximity of the N-50 closed shell

  3. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

    2016-08-29

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

  4. 75 FR 47318 - GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and...

    Science.gov (United States)

    2010-08-05

    ...] GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and.... Applicants: GE Asset Management Incorporated (``GEAM'') and GE Investment Distributors, Inc. (``GEID... of Investment Management, Office of Investment Company Regulation). SUPPLEMENTARY INFORMATION: The...

  5. Real space mapping of Yu-Shiba-Rusinov states of an extended magnetic scatterer on a conventional superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Etzkorn, Markus; Eltschka, Matthias; Jaeck, Berthold; Topp, Andreas; Ast, Christian R. [Max-Planck-Institute for Solid State Research, 70569 Stuttgart (Germany); Kern, Klaus [Max-Planck-Institute for Solid State Research, 70569 Stuttgart (Germany); Ecole Polytechnique Federale de Lausanne, 1015 Lausanne (Switzerland)

    2016-07-01

    The interaction of a local magnetic impurity with a superconductor causes the formation of Yu-Shiba-Rusinov (YSR)states in the vicinity of the impurity. These have recently received increasing attention in the context of Majorana Fermions and other exotic states that might be created from the mutual interplay. YSR states have been extensively studied by scanning tunneling microscopy and so far have been discussed mainly in the limit of point scattering impurities. Here we present our investigations of the local properties of single magnetic Copper-Phthalocynane molecules on the (5x1) reconstructed, superconducting V(100) surface measured at 15 mK temperature. We find very intense YSR states with energies that depend on the precise absorbtion geometry of the molecule. At the same time we find no indication of a local suppression of the superconducting gap around the impurity. We follow the state evolution in real space for about 3 nm corresponding to about three orders of magnitude in spectral intensity. The spectra display rich structure with local variations in the electron-hole asymmetries. The observed intensity changes in the spectra can not be described on the basis of a single point like scattering potential.

  6. BOOKPLATES, OWNERS’ RECORDINGS AND DEDICATORY INSCRIPTIONS ON THE BOOKS FROM THE BOOK COLLECTION OF THE MATHEMATICIAN I. YU. TIMTCHENKO

    Directory of Open Access Journals (Sweden)

    О. В. Полевщикова

    2015-09-01

    Full Text Available The professor of Novorossiysky (Odessa University I. Yu. Timchenko (1863-1939 managed to collect a remarkable library on the history of Mathematics which contained primarily antiquarian books including incunabula and 16th century editions. Various aspects of this valuabe book collection have been studied lately. Books from this dispersed collection have been revealed and examined de visu. Their cataloguing incudes the description of individual book copies in view of their provenance. The purpose of the article is to provide the information on a complex of owners’ recordings and dedicatory inscriptions as well as bookplates left on the books making an attempt to trace the fate of the copies incorporated in the library of the Odessa mathematician. The information collected is considered in the context of the history of Mathematics. Many may characterise both direct and indirect expressions of the readers’ interests in books and reading. The study of provenance records demonstrate that the copies acquired by professor Timchenko used to be in the libraries of a number of men of science – mathematicians, physicists, philologists, etc. The findings of this article enable to enlarge the database of provenance making the practical value and results of the research.

  7. Reflection and transmission characteristics of a layer obeying the two-pressure field poroelastic phenomenological model of Berryman and Wang.

    Science.gov (United States)

    Kachkouch, F; Franklin, H; Tinel, A

    2018-07-01

    The characteristics of the reflection and transmission by a fluid-loaded double porosity layer are studied. The medium obeys the two-pressure field poroelastic phenomenological model of Berryman and Wang. The open pore hydraulic conditions applied at the interfaces yield factorized expressions for the coefficients exhibiting on the one hand a separation allowing to distinguish between symmetrical and antisymmetrical motions and on the other hand the way each of the three dilatational waves associate with the shear wave. The numerical study done for a layer of Berea sandstone saturated by water shows clearly the role of each of the dilatational waves. There are peculiarities such as the absence of the fundamental antisymmetrical mode (zero order) and a singular behaviour of the symmetrical fundamental mode. The low frequency approximation for this latter is derived from the proposed formulas and compared with the numerical results. Copyright © 2018 Elsevier B.V. All rights reserved.

  8. Smoke (Paul Auster et Wayne Wang, 1995 : une œuvre à la croisée des arts

    Directory of Open Access Journals (Sweden)

    Delphine Letort

    2011-04-01

    Full Text Available The adaptation of the short story entitled “Auggie Wren’s Christmas Story” (1990 gathered the writer Paul Auster and the director Wayne Wang around a film project that allowed them to share their artistic practices in a collaborative work. This paper examines the question that underpins the narrative of the short-story by grappling with the appropriations of the real in other artistic modes. Paul Auster’s first encounter with the cinema points out the convergence between aural writing and cinematic writing, evoked through the double figure of the writer and that of the tale-teller/photographer in both the film and the short story.L’adaptation de la nouvelle « Auggie Wren’s Christmas Story » (1990 réunit l’écrivain Paul Auster et le réalisateur Wayne Wang autour d’un projet qui leur permit de croiser leurs pratiques artistiques dans un travail de collaboration. Cet article prolonge le questionnement artistique qui sous-tend le récit de la nouvelle en interrogeant les modalités de l’appropriation du réel par d’autres arts. La première rencontre entre Paul Auster et le cinéma met en relief les points de convergence entre écriture verbale et écriture cinématographique, évoqués autour de la double figure de l’écrivain et du conteur/photographe dans le film et dans la nouvelle.

  9. Ge-Au eutectic bonding of Ge (100) single crystals

    International Nuclear Information System (INIS)

    Knowlton, W.B.; Beeman, J.W.; Emes, J.H.; Loretto, D.; Itoh, K.M.; Haller, E.E.

    1993-01-01

    The author present preliminary results on the eutectic bonding between two (100) Ge single crystal surfaces using thin films of Au ranging from 900 angstrom/surface to 300 angstrom/surface and Pd (10% the thickness of Au). Following bonding, plan view optical microscopy (OM) of the cleaved interface of samples with Au thicknesses ≤ 500 angstrom/surface show a eutectic morphology more conducive to phonon transmission through the bond interface. High resolution transmission electron microscopy (HRTEM) cross sectional interface studies of a 300 angstrom/surface Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity of the Ge is apparent through the interface. TEM studies also reveal heteroepitaxial growth of Au with a Au-Ge lattice mismatch of less than 2%. Eutectic bonds with 200 angstrom/surface Au have been attained with characterization pending. An optical polishing technique for Ge has been optimized to insure intimate contact between the Ge surfaces prior to bonding. Interferometry analysis of the optically polished Ge surface shows that surface height fluctuations lie within ±150 angstrom across an interval of lmm. Characterization of phonon transmission through the interface is discussed with respect to low temperature detection of ballistic phonons

  10. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  11. Book review of “Imaging in Cellular and Tissue Engineering” edited by Y Hanry Yu and Nur Aida Abdul Rahim

    OpenAIRE

    Brey, Eric Michael

    2014-01-01

    This article is a review of the book “Imaging in Cellular and Tissue Engineering” (ISBN-13: 978-1439848036, $149.95, 298 Pages, 114 Illustrations) edited by Y Hanry Yu and Nur Aida Abdul Rahim published by the CRC Press (Taylor&Francis) in 2013. The contents of the book and its relevance to tissue engineering and regenerative medicine are discussed in this invited review.

  12. Acknowledgements [3. international conference on small angle neutron scattering dedicated to the 80 anniversary of Yu.M. Ostanevich, Dubna (Russian Federation), 6-9 June 2016

    International Nuclear Information System (INIS)

    2017-01-01

    The Organizers of the III International Conference on Small Angle Neutron Scattering dedicated to the 80-th anniversary of Yu. M. Ostanevich, acknowledge the financial support from the Grants of the Governmental Plenipotentiary Representatives of Romania, Slovakia, Czech Republic, scientific projects of the Cooperation Programmes JINR-Romania. Special gratitude to the JINR and FLNP administration and staff is expressed. The conference is also dedicated to the 60th Anniversary of the Joint Institute for Nuclear Research, Dubna. (paper)

  13. Uniaxially stressed Ge:Ga and Ge:Be

    Energy Technology Data Exchange (ETDEWEB)

    Dubon, Jr., Oscar Danilo [Univ. of California, Berkeley, CA (United States)

    1992-12-01

    The application of a large uniaxial stress to p-type Ge single crystals changes the character of both the valence band and the energy levels associated with the acceptors. Changes include the splitting of the fourfold degeneracy of the valence band top and the reduction of the ionization energy of shallow acceptors. In order to study the effect of uniaxial stress on transport properties of photoexcited holes, a variable temperature photo-Hall effect system was built in which stressed Ge:Ga and Ge:Be could be characterized. Results indicate that stress increases the lifetime and Hall mobility of photoexcited holes. These observations may help further the understanding of fundamental physical processes that affect the performance of stressed Ge photoconductors including the capture of holes by shallow acceptors.

  14. Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers.

    Science.gov (United States)

    Jiang, Jialin; Sun, Junqiang; Gao, Jianfeng; Zhang, Ruiwen

    2017-10-30

    We propose and design uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers with the stress along direction. The micro-bridge structure is adapted for introducing uniaxial stress in Ge/SiGe quantum well. To enhance the fabrication tolerance, full-etched circular gratings with high reflectivity bandwidths of ~500 nm are deployed in laser cavities. We compare and analyze the density of state, the number of states between Γ- and L-points, the carrier injection efficiency, and the threshold current density for the uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers. Simulation results show that the threshold current density of the Ge/SiGe quantum well laser is much higher than that of the bulk Ge laser, even combined with high uniaxial tensile stress owing to the larger number of states between Γ- and L- points and extremely low carrier injection efficiency. Electrical transport simulation reveals that the reduced effective mass of the hole and the small conduction band offset cause the low carrier injection efficiency of the Ge/SiGe quantum well laser. Our theoretical results imply that unlike III-V material, uniaxially tensile stressed bulk Ge outperforms a Ge/SiGe quantum well with the same strain level and is a promising approach for Si-compatible light sources.

  15. Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

    Science.gov (United States)

    Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

    2016-04-01

    A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

  16. <300> GeV team

    CERN Multimedia

    CERN PhotoLab

    1971-01-01

    The 300 GeV team had been assembled. In the photograph are Hans Horisberger, Clemens Zettler, Roy Billinge, Norman Blackburne, John Adams, Hans-Otto Wuster, Lars Persson, Bas de Raad, Hans Goebel, Simon Van der Meer.

  17. New contributions to the knowledge of Chinese flea beetle fauna (III): Revision of Meishania Chen & Wang with description of five new species (Coleoptera: Chrysomelidae: Galerucinae)

    Science.gov (United States)

    The flea beetle genus Meishania Chen & Wang is revised and five new species - M. cangshanensis sp. nov., M. flavipennis sp. nov., M. fulvotigera sp. nov., and M. sichuanica sp. nov. from China and M. bhutanensis sp. nov. from Bhutan - are described. All species of Meishania are illustrated and a key...

  18. H.E. Professor Wang Liheng, Minister of Aviation of the People's Republic of China, President, China Aerospace Science & Technology Corporation

    CERN Multimedia

    Patrice Loïez

    2001-01-01

    H. E. Professor Wang Liheng, Minister of Aviation, and President, China Aerospace Science & Technology Corporation, People's Republic of China (2nd from left) with (from left to right) Professor Hans Hofer, Professor Roger Cashmore, Research Director for Collider Programmes, Professor Samuel C. C. Ting, CERN and Professor Lei Gang, Secretary to the Minister, September 2001.

  19. Answer to Wang and Luo, "Polyploidization increases meiotic recombination frequency in Arabidopsis: a close look at statistical modelling and data analysis"

    Directory of Open Access Journals (Sweden)

    Pecinka Ales

    2012-04-01

    Full Text Available Abstract This article is a response to Wang and Luo. See correspondence article http://www.biomedcentral.com/1741-7007/10/30/ [WEBCITE] and the original research article http://www.biomedcentral.com/1741-7007/9/24 [WEBCITE].

  20. Oxygen transport and GeO2 stability during thermal oxidation of Ge

    Science.gov (United States)

    da Silva, S. R. M.; Rolim, G. K.; Soares, G. V.; Baumvol, I. J. R.; Krug, C.; Miotti, L.; Freire, F. L.; da Costa, M. E. H. M.; Radtke, C.

    2012-05-01

    Oxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigated. Higher oxidation temperatures and lower oxygen pressures promote GeO desorption. An appreciable fraction of oxidized Ge desorbs during the growth of a GeO2 layer. The interplay between oxygen desorption and incorporation results in the exchange of O originally present in GeO2 by O from the gas phase throughout the oxide layer. This process is mediated by O vacancies generated at the GeO2/Ge interface. The formation of a substoichiometric oxide is shown to have direct relation with the GeO desorption.

  1. All-atom simulation study of protein PTH(1-34) by using the Wang-Landau sampling method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seung-Yeon [Korea National University of Transportation, Chungju (Korea, Republic of); Kwak, Woo-Seop [Chosun University, Gwangju (Korea, Republic of)

    2014-12-15

    We perform simulations of the N-terminal 34-residue protein fragment PTH(1-34), consisting of 581 atoms, of the 84-residue human parathyroid hormone by using the all-atom ECEPP/3 force field and the Wang-Landau sampling method. Through a massive high-performance computation, the density of states and the partition function Z(T), as a continuous function of T, are obtained for PTH(1-34). From the continuous partition function Z(T), the partition function zeros of PTH(1-34) are evaluated for the first time. From both the specific heat and the partition function zeros, two characteristic transition temperatures are obtained for the all-atom protein PTH(1-34). The higher transition temperature T{sub 1} and the lower transition temperature T{sub 2} of PTH(1-34) can be interpreted as the collapse temperature T{sub θ} and the folding temperature T{sub f} , respectively.

  2. Risky choice with heuristics: reply to Birnbaum (2008), Johnson, Schulte-Mecklenbeck, and Willemsen (2008), and Rieger and Wang (2008).

    Science.gov (United States)

    Brandstätter, Eduard; Gigerenzer, Gerd; Hertwig, Ralph

    2008-01-01

    E. Brandstätter, G. Gigerenzer, and R. Hertwig (2006) showed that the priority heuristic matches or outperforms modifications of expected utility theory in predicting choice in 4 diverse problem sets. M. H. Birnbaum (2008) argued that sets exist in which the opposite is true. The authors agree--but stress that all choice strategies have regions of good and bad performance. The accuracy of various strategies systematically depends on choice difficulty, which the authors consider a triggering variable underlying strategy selection. Agreeing with E. J. Johnson, M. Schulte-Mecklenbeck, and M. C. Willemsen (2008) that process (not "as-if") models need to be formulated, the authors show how quantitative predictions can be derived and test them. Finally, they demonstrate that many of Birnbaum's and M. O. Rieger and M. Wang's (2008) case studies championing their preferred models involved biased tests in which the priority heuristic predicted data, whereas the parameterized models were fitted to the same data. The authors propose an adaptive toolbox approach of risky choice, according to which people first seek a no-conflict solution before resorting to conflict-resolving strategies such as the priority heuristic. (c) 2008 APA, all rights reserved

  3. Identifying the candidate genes involved in the calyx abscission process of 'Kuerlexiangli' (Pyrus sinkiangensis Yu) by digital transcript abundance measurements.

    Science.gov (United States)

    Qi, Xiaoxiao; Wu, Jun; Wang, Lifen; Li, Leiting; Cao, Yufen; Tian, Luming; Dong, Xingguang; Zhang, Shaoling

    2013-10-23

    'Kuerlexiangli' (Pyrus sinkiangensis Yu), a native pear of Xinjiang, China, is an important agricultural fruit and primary export to the international market. However, fruit with persistent calyxes affect fruit shape and quality. Although several studies have looked into the physiological aspects of the calyx abscission process, the underlying molecular mechanisms remain unknown. In order to better understand the molecular basis of the process of calyx abscission, materials at three critical stages of regulation, with 6000 × Flusilazole plus 300 × PBO treatment (calyx abscising treatment) and 50 mg.L-1GA3 treatment (calyx persisting treatment), were collected and cDNA fragments were sequenced using digital transcript abundance measurements to identify candidate genes. Digital transcript abundance measurements was performed using high-throughput Illumina GAII sequencing on seven samples that were collected at three important stages of the calyx abscission process with chemical agent treatments promoting calyx abscission and persistence. Altogether more than 251,123,845 high quality reads were obtained with approximately 8.0 M raw data for each library. The values of 69.85%-71.90% of clean data in the digital transcript abundance measurements could be mapped to the pear genome database. There were 12,054 differentially expressed genes having Gene Ontology (GO) terms and associating with 251 Kyoto Encyclopedia of Genes and Genomes (KEGG) defined pathways. The differentially expressed genes correlated with calyx abscission were mainly involved in photosynthesis, plant hormone signal transduction, cell wall modification, transcriptional regulation, and carbohydrate metabolism. Furthermore, candidate calyx abscission-specific genes, e.g. Inflorescence deficient in abscission gene, were identified. Quantitative real-time PCR was used to confirm the digital transcript abundance measurements results. We identified candidate genes that showed highly dynamic changes in

  4. Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

    International Nuclear Information System (INIS)

    Gao Fei; Green, Martin A.; Conibeer, Gavin; Cho, Eun-Chel; Huang Yidan; Perez-Wurfl, Ivan; Flynn, Chris

    2008-01-01

    Multilayered Ge nanocrystals embedded in SiO x GeN y films have been fabricated on Si substrate by a (Ge + SiO 2 )/SiO x GeN y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO 2 composite target and subsequent thermal annealing in N 2 ambient at 750 deg. C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm -1 , which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO 2 ) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction

  5. Toepassing geïntegreerde maatregelen geïnvestariseerd

    NARCIS (Netherlands)

    Heijne, B.

    2009-01-01

    Kennis over 'good practices' en 'best practices' van geïntegreerde bedrijfsstrategieën verspreidt zich snel over Europa. Dat is één van de conclusies van een inventarisatie binnen het project Endure. Het aanplanten van minder vatbare of resistente rassen blijkt weinig toegepast te worden in de

  6. Public health impact of disease-behavior dynamics. Comment on "Coupled disease-behavior dynamics on complex networks: A review" by Z. Wang et al.

    Science.gov (United States)

    Wells, Chad R.; Galvani, Alison P.

    2015-12-01

    In a loop of dynamic feedback, behavior such as the decision to vaccinate, hand washing, or avoidance influences the progression of the epidemic, yet behavior is driven by the individual's and population's perceived risk of infection during an outbreak. In what we believe will become a seminal paper that stimulates future research as well as an informative teaching aid, Wang et. al. comprehensively review methodological advances that have been used to incorporate human behavior into epidemiological models on the effects of coupling disease transmission and behavior on complex social networks [1]. As illustrated by the recent outbreaks of measles and Middle Eastern Respiratory Syndrome (MERS), here we highlight the importance of coupling behavior and disease transmission that Wang et al. address.

  7. Neutron transmutation doped Ge bolometers

    Science.gov (United States)

    Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.

    1983-01-01

    Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

  8. GE Healthcare | College of Engineering & Applied Science

    Science.gov (United States)

    Olympiad Girls Who Code Club FIRST Tech Challenge NSF I-Corps Site of Southeastern Wisconsin UW-Milwaukee ; Talent GE Healthcare is the founding partner of the Center for Advanced Embedded Systems (CAES), formerly GE Healthcare's needs for talent. Business Corporate Partners ANSYS Institute GE Healthcare Catalyst

  9. Radiation emission from wrinkled SiGe/SiGe nanostructure

    Czech Academy of Sciences Publication Activity Database

    Fedorchenko, Alexander I.; Cheng, H. H.; Sun, G.; Soref, R. A.

    2010-01-01

    Roč. 96, č. 11 (2010), s. 113104-113107 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z20760514 Keywords : SiGe wrinkled nanostructures * si-based optical emitter * synchrotron radiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.820, year: 2010 http://apl.aip.org/resource/1/applab/v96/i11/p113104_s1?isAuthorized=no

  10. Magnetic properties of ultrathin Co/Ge(111) and Co/Ge(100) films

    International Nuclear Information System (INIS)

    Cheng, W. C.; Tsay, J. S.; Yao, Y. D.; Lin, K. C.; Yang, C. S.; Lee, S. F.; Tseng, T. K.; Neih, H. Y.

    2001-01-01

    The orientation of the magnetization and the occurrence of interfacial ferromagnetic inactive layers for ultrathin Co films grown on Ge(111) and Ge(100) surfaces have been studied using the in situ surface magneto-optic Kerr effect. On a Ge(111) substrate, cobalt films (≤28 monolayers) with in-plane easy axis of magnetization have been observed; however, on a Ge(100) substrate, ultrathin Co films (14 - 16 monolayers) with canted out-of-plane easy axis of magnetization were measured. The ferromagnetic inactive layers were formed due to the intermixing of Co and Ge and lowering the Curie temperature by reducing Co film thickness. The Co - Ge compound inactive layers were 3.8 monolayers thick for Co films grown on Ge(111) and 6.2 monolayers thick for Co films deposited on Ge(100). This is attributed to the difference of the density of surface atoms on Ge(111) and Ge(100). [copyright] 2001 American Institute of Physics

  11. Dipole Resonances of 76Ge

    Science.gov (United States)

    Ilieva, R. S.; Cooper, N.; Werner, V.; Rusev, G.; Pietralla, N.; Kelly, J. H.; Tornow, W.; Yates, S. W.; Crider, B. P.; Peters, E.

    2013-10-01

    Dipole resonances in 76Ge have been studied using the method of Nuclear Resonance Fluorescence (NRF). The experiment was performed using the Free Electron Laser facility at HI γS/TUNL, which produced linearly polarised quasi-monoenergetic photons in the 4-9 MeV energy range. Photon strength, in particular dipole strength, is an important ingredient in nuclear reaction calculations, and recent interest in its study has been stimulated by observations of a pygmy dipole resonance near the neutron separation energy Sn of certain nuclei. Furthermore, 76Ge is a candidate for 0 ν 2 β -decay. The results are complimentary to a relevant experiment done at TU Darmstadt using Bremsstrahlung beams. Single-resonance parities and a preliminary estimate of the total photo-excitation cross section will be presented. This work was supported by the U.S. DOE under grant no. DE-FG02-91ER40609.

  12. Comment on "Electron impact excitation of N-like ions from the ICFT R-matrix calculation" by HB Wang, G Jiang, XF Li, and ZC He in At. Data Nucl. Data Tables 120 (2018) 373-429

    Science.gov (United States)

    Aggarwal, Kanti M.

    2018-03-01

    The paper "Electron impact excitation of N-like ions from the ICFT R-matrix calculation" by Wang et al. [1] lacks details of calculations, presents only limited data, and has a few anomalies, as listed below.

  13. Influence of Magnetic Ordering between Cr Adatoms on the Yu-Shiba-Rusinov States of the β -Bi2Pd Superconductor

    Science.gov (United States)

    Choi, Deung-Jang; Fernández, Carlos García; Herrera, Edwin; Rubio-Verdú, Carmen; Ugeda, Miguel M.; Guillamón, Isabel; Suderow, Hermann; Pascual, José Ignacio; Lorente, Nicolás

    2018-04-01

    We show that the magnetic ordering of coupled atomic dimers on a superconductor is revealed by their intragap spectral features. Chromium atoms on the superconductor β -Bi2Pd surface display Yu-Shiba-Rusinov bound states, detected as pairs of intragap excitations in tunneling spectra. By means of atomic manipulation with a scanning tunneling microscope's tip, we form Cr dimers with different arrangements and find that their intragap features appear either shifted or split with respect to single atoms. These spectral variations are associated with the magnetic coupling, ferromagnetic or antiferromagnetic, of the dimer, as confirmed by density functional theory simulations. The striking qualitative differences between the observed tunneling spectra prove that intragap Shiba states are extremely sensitive to the magnetic ordering on the atomic scale.

  14. Reply to Comment on ``Effects of fast and slow solar wind on the correlations between interplanetary medium and geomagnetic activity'' by C. B. Wang and J. K. Chao

    Science.gov (United States)

    Ballatore, Paola

    2003-10-01

    The paper [2002] (the paper commented) shows that the statistical significance of the correlations between the interplanetary parameters and the geomagnetic indices (Kp or Dst) is generally less significant during the fastest solar wind. On the other hand, at these fast solar wind periods, the significance of the Kp versus Dst correlation is equal to or higher than during slower solar wind. These results, together with further observations related to substorm periods and with previously published findings, are interpreted in terms of a difference in the interplanetary-magnetospheric coupling for solar wind faster or slower than a certain threshold (identified between about 500 and 600 km/s). Specifically, it is suggested that a possible linear approximation of the geomagnetic-interplanetary coupling is more appropriate during solar wind speed (Vsw) slower than this threshold, being nonlinear processes more dominant during the fastest speeds. This reply highlights that the correlation coefficients shown by [2003] are in agreement with these findings. In addition, Wang and Chao show that the statistical significance of the difference between the correlation coefficients for Vsw ≥ 550 km/s and those for Vsw Wang and Chao is wrong. Moreover, Wang and Chao recalculate the correlations between the interplanetary parameters and the ΔDst instead of Dst; in fact they note that the time derivative of this index (not the index itself) is driven by the interplanetary medium. Here we note that on the contrary, they show that the correlation coefficients between interplanetary parameters and Dst are larger than those obtained using ΔDst and we suggest a possible interpretation in terms of nonlinearity.

  15. Epigenetic battle of the sexes. Comment on: ;Epigenetic game theory: How to compute the epigenetic control of maternal-to-zygotic transition; by Qian Wang et al.

    Science.gov (United States)

    Wu, Song

    2017-03-01

    Qian Wang et al. present an interesting framework, named epigenetic game theory, for modeling sex-based epigenetic dynamics during embryogenesis from a new viewpoint of evolutionary game theory [1]. That is, epigenomes of sperms and oocytes may coordinate through either cooperation or competition, or both, to affect the fitness of embryos. The work uses a set of ordinary differential equations (ODEs) to describe longitudinal trajectories of DNA methylation levels in both parental and maternal gametes and their dependence on each other. The insights gained from this review, i.e. dynamic methylation profiles and their interaction are potentially important to many fields, such as biomedicine and agriculture.

  16. Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

    International Nuclear Information System (INIS)

    Zhang, B.; Yu, W.; Zhao, Q.T.; Buca, D.; Breuer, U.; Hartmann, J.-M.; Holländer, B.; Mantl, S.; Zhang, M.; Wang, X.

    2013-01-01

    We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C + ions pre-implanted into relaxed Si 0.8 Ge 0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C + ions implantation. In addition, the effective hole Schottky barrier heights (Φ Bp ) of NiSiGe/SiGe were extracted. Φ Bp was observed to decrease substantially with an increase in C + ion implantation dose

  17. Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure

    International Nuclear Information System (INIS)

    Yuan, C L; Lee, P S

    2008-01-01

    A Ge/GeO 2 core/shell nanostructure embedded in an Al 2 O 3 gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO 2 core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO 2 shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering

  18. Enhanced charge storage capability of Ge/GeO(2) core/shell nanostructure.

    Science.gov (United States)

    Yuan, C L; Lee, P S

    2008-09-03

    A Ge/GeO(2) core/shell nanostructure embedded in an Al(2)O(3) gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO(2) core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO(2) shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering.

  19. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures.

    Science.gov (United States)

    Khomenkova, L; Lehninger, D; Kondratenko, O; Ponomaryov, S; Gudymenko, O; Tsybrii, Z; Yukhymchuk, V; Kladko, V; von Borany, J; Heitmann, J

    2017-12-01

    Ge-rich ZrO 2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO 2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO 2 . The "start point" of this process is in the range of 640-700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO 2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO 2 matrix. The mechanism of phase separation is discussed in detail.

  20. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

    OpenAIRE

    Khomenkova, L.; Lehninger, D.; Kondratenko, O.; Ponomaryov, S.; Gudymenko, O.; Tsybrii, Z.; Yukhymchuk, V.; Kladko, V.; von Borany, J.; Heitmann, J.

    2017-01-01

    Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The ?...

  1. Grateloupia tenuis Wang et Luan sp. nov. (Halymeniaceae, Rhodophyta: A New Species from South China Sea Based on Morphological Observation and rbcL Gene Sequences Analysis

    Directory of Open Access Journals (Sweden)

    Ling Yu

    2013-01-01

    Full Text Available Grateloupia tenuis Wang et Luan sp. nov. is a new species described from Lingshui, Hainan Province, South China Sea. Based on the external form and internal structure, combined with rbcL gene sequence analysis, Grateloupia tenuis is distinct from other Grateloupia species as follows: (1 thalli is slippery and cartilaginous in texture; possess fewer branches, relatively slight main axes, and two or three dichotomous branches; (2 cortex is 5-6 layers; medulla is solid when young, but hollow in old branches; reproductive structures are dispersed in main axes of thalli and lower portions of branchlets; exhibits Grateloupia-type auxiliary cell ampullae; (3 the four studied G. tenuis sequences were positioned in a large Grateloupia clade of Halymeniaceae, which included sister group generitype G. filicina with 68 bp differences; G. tenuis was determined to be a sister taxon to the G. catenata, G. ramosissima, G. orientalis, and G. filiformis subclade. The pairwise distances between G. tenuis and these species were 39 to 50 bp. The sequences of G. tenuis differed by 81–108 bp from the sequences of other samples in Grateloupia; there are 114–133 bp changes between G. tenuis and other genera of Halymeniaceae. In final analysis, we considered Grateloupia tenuis Wang et Luan sp. nov. to be a new species of genus Grateloupia.

  2. Grateloupia tenuis Wang et Luan sp. nov. (Halymeniaceae, Rhodophyta): a new species from South China Sea based on morphological observation and rbcL gene sequences analysis.

    Science.gov (United States)

    Yu, Ling; Wang, Hongwei; Luan, Rixiao

    2013-01-01

    Grateloupia tenuis Wang et Luan sp. nov. is a new species described from Lingshui, Hainan Province, South China Sea. Based on the external form and internal structure, combined with rbcL gene sequence analysis, Grateloupia tenuis is distinct from other Grateloupia species as follows: (1) thalli is slippery and cartilaginous in texture; possess fewer branches, relatively slight main axes, and two or three dichotomous branches; (2) cortex is 5-6 layers; medulla is solid when young, but hollow in old branches; reproductive structures are dispersed in main axes of thalli and lower portions of branchlets; exhibits Grateloupia-type auxiliary cell ampullae; (3) the four studied G. tenuis sequences were positioned in a large Grateloupia clade of Halymeniaceae, which included sister group generitype G. filicina with 68 bp differences; G. tenuis was determined to be a sister taxon to the G. catenata, G. ramosissima, G. orientalis, and G. filiformis subclade. The pairwise distances between G. tenuis and these species were 39 to 50 bp. The sequences of G. tenuis differed by 81-108 bp from the sequences of other samples in Grateloupia; there are 114-133 bp changes between G. tenuis and other genera of Halymeniaceae. In final analysis, we considered Grateloupia tenuis Wang et Luan sp. nov. to be a new species of genus Grateloupia.

  3. Grateloupia ramosa Wang & Luan sp. nov. (Halymeniaceae, Rhodophyta), a new species from China based on morphological evidence and comparative rbcL sequences

    Science.gov (United States)

    Cao, Cuicui; Liu, Miao; Guo, Shaoru; Zhao, Dan; Luan, Rixiao; Wang, Hongwei

    2016-03-01

    Grateloupia ramosa Wang & Luan sp. nov. (Halymeniaceae, Rhodophyta) is newly described from Hainan Province, southern China. The organism has the following morphological features: (1) purplish red, cartilaginous and lubricous thalli 5-10 cm in height; (2) compressed percurrent axes bearing abundant branches with opposite arrangement; (3) claw-like apices on top, constricted to 2-4 cm at the base; (4) cortex consisting of 3-6 layers of elliptical or anomalous cells and a medulla covered by compact medullary filaments; (5) reproductive structures distributed throughout the thallus, especially centralized at the bottom of the end portion of the branches; and (6) 4-celled Carpogonial branches and 3-celled auxiliary-cell branches, both of the Grateloupia-type. The morphological diff erences were supported by molecular phylogenetics based on ribulose-1, 5-bisphosphate carboxylase/oxygenase ( rbcL) gene sequence analysis. There was only a 1 bp divergence between specimens collected from Wenchang and Lingshui of Hainan province. The new species was embedded in the large Grateloupia clade of the Halymeniaceae. The pairwise distances between G. ramosa and other species within Grateloupia ranged from 26 to 105 bp, within pairwise distances of 13-111 bp between species of the large genus Grateloupia in Halymeniaceae. Thus, we propose this new species as G. ramosa Wang & Luan sp. nov.

  4. Grateloupia tenuis Wang et Luan sp. nov. (Halymeniaceae, Rhodophyta): A New Species from South China Sea Based on Morphological Observation and rbcL Gene Sequences Analysis

    Science.gov (United States)

    Wang, Hongwei; Luan, Rixiao

    2013-01-01

    Grateloupia tenuis Wang et Luan sp. nov. is a new species described from Lingshui, Hainan Province, South China Sea. Based on the external form and internal structure, combined with rbcL gene sequence analysis, Grateloupia tenuis is distinct from other Grateloupia species as follows: (1) thalli is slippery and cartilaginous in texture; possess fewer branches, relatively slight main axes, and two or three dichotomous branches; (2) cortex is 5-6 layers; medulla is solid when young, but hollow in old branches; reproductive structures are dispersed in main axes of thalli and lower portions of branchlets; exhibits Grateloupia-type auxiliary cell ampullae; (3) the four studied G. tenuis sequences were positioned in a large Grateloupia clade of Halymeniaceae, which included sister group generitype G. filicina with 68 bp differences; G. tenuis was determined to be a sister taxon to the G. catenata, G. ramosissima, G. orientalis, and G. filiformis subclade. The pairwise distances between G. tenuis and these species were 39 to 50 bp. The sequences of G. tenuis differed by 81–108 bp from the sequences of other samples in Grateloupia; there are 114–133 bp changes between G. tenuis and other genera of Halymeniaceae. In final analysis, we considered Grateloupia tenuis Wang et Luan sp. nov. to be a new species of genus Grateloupia. PMID:24455703

  5. Zhuyi: From Absence to Bustle? Some Comments on Wang Jianjiang’s Article “The Bustle and the Absence of Zhuyi”

    Directory of Open Access Journals (Sweden)

    Aleš Erjavec

    2017-09-01

    Full Text Available The article is a response to the article published in Filozofski vestnik in 2016 and written by Prof. Wanf Jianjiang who in recent years devoted much of his efforts to the influence of of Western aesthetics and philosophy on Chinese humanities. Thus a notion introduced by Prof. Wang Jianjiang – Zhuyi – became the center of discussion in the papers that are to be found in this volume of AM Journal. Prof. Jianjiang claims that Zhuyi has a similar meaning as Western -ism and argues that Chinese aestheticians and intellectuals in general must develop their own theories (-isms if they want to gain speech and not remain stuck with voice (cf. Jacques Rancière.   Article received: May 3, 2017; Article accepted: May 8, 2017; Published online: September 15, 2017 Original scholarly paper How to cite this article: Erjavec, Aleš. "Zhuyi: From Absence to Bustle? Some Comments on Wang Jianjiang’s Article 'The Bustle and the Absence of Zhuyi'." AM Journal of Art and Media Studies 13 (2017: 111-121. doi: 10.25038/am.v0i13.189

  6. GE's advanced nuclear reactor designs

    International Nuclear Information System (INIS)

    Berglund, R.C.

    1993-01-01

    The excess of US electrical generating capacity which has existed for the past 15 years is coming to an end as we enter the 1990s. Environmental and energy security issues associated with fossil fuels are kindling renewed interest in the nuclear option. The importance of these issues are underscored by the National Energy Strategy (NES) which calls for actions which open-quotes are designed to ensure that the nuclear power option is available to utilities.close quotes Utilities, utility associations, and nuclear suppliers, under the leadership of the Nuclear Power Oversight Committee (NPOC), have jointly developed a 14-point strategic plan aimed at establishing a predictable regulatory environment, standardized and pre-licensed Advanced Light Water Reactor (ALWR) nuclear plants, resolving the long-term waste management issue, and other open-quotes enabling conditions.close quotes GE is participating in this national effort and GE's family of advanced nuclear power plants feature two reactor designs, developed on a common technology base, aimed at providing a new generation of nuclear plants to provide safe, clean, economical electricity to the world's utilities in the 1990s and beyond. Together, the large-size (1300 MWe) Advanced Boiling Water Reactor (ABWR) and the small-size (600 MWe) Simplified Boiling Water Reactor (SBWR) are innovative, near-term candidates for expanding electrical generating capacity in the US and worldwide. Both possess the features necessary to do so safety, reliably, and economically

  7. Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates

    Science.gov (United States)

    Imajo, T.; Toko, K.; Takabe, R.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

    2018-01-01

    Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.

  8. Room Temperature Ferromagnetic Mn:Ge(001

    Directory of Open Access Journals (Sweden)

    George Adrian Lungu

    2013-12-01

    Full Text Available We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001, heated at relatively high temperature (starting with 250 °C. The samples were characterized by low energy electron diffraction (LEED, scanning tunneling microscopy (STM, high resolution transmission electron microscopy (HRTEM, X-ray photoelectron spectroscopy (XPS, superconducting quantum interference device (SQUID, and magneto-optical Kerr effect (MOKE. Samples deposited at relatively elevated temperature (350 °C exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001 crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001. The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

  9. Influence of Partial Dam Removal on Change of Channel Morphology and Physical Habitats: A Case Study of Yu-Sheng River

    Science.gov (United States)

    Hao Weng, Chung; Yeh, Chao Hsien

    2017-04-01

    The rivers in Taiwan have the characteristic of large slope gradient and fast flow velocity caused by rugged terrain. And Taiwan often aces many typhoons which will bring large rainfall in the summer. In early Taiwan, river management was more focus on flood control, flood protection and disaster reduction. In recent years, the rise of ecological conservation awareness for the precious fish species brings spotlight on the Taiwan salmon (Oncorhynchus masou formosanus) which lives in the river section of this study. In order to make sure ecological corridor continuing, dam removal is the frequently discussed measure in recent years and its impact on environmental is also highly concerned. Since the dam removal may causes severe changes to the river channel, the action of dam removal needs careful evaluation. As one of the endangered species, Taiwan salmon is considered a national treasure of Taiwan and it was originally an offshore migration of the Pacific salmon. After the ice age and geographical isolation, it becomes as an unique subspecies of Taiwan and evolved into landlocked salmon. Now the Taiwan salmon habitats only exists in few upstream creeks and the total number of wild Taiwan salmon in 2015 was about 4,300. In order to expand the connectivity of the fish habitats in Chi-Jia-Wan creek basin, several dam removal projects had completed with good results. Therefore, this paper focuses on the dam removal of Yu-Sheng creek dam. In this paper, a digital elevation model (DEM) of about 1 kilometer channel of the Yu-Sheng creek dam is obtained by unmanned aerial vehicle (UAV). Using CCHE2D model, the simulation of dam removal will reveal the impact on channel morphology. After model parameter identification and verification, this study simulated the scenarios of three historical typhoon events with recurrence interval of two years, fifteen years, and three decades under four different patterns of dam removal to identify the the head erosion, flow pattern, and

  10. The study on Ge-68 production

    International Nuclear Information System (INIS)

    Yang, Seung Dae; Kim, Sang Wook; Hur, Min Goo

    2009-06-01

    The Ge-68 is a correction source of PET and is used in radiopharmaceuticals synthesis. This project is mainly aimed to produce the Ge-68. Based on this project results, the local Ge-68 production can be possible and the revitalization of the radioisotope utilization research areas can be accomplished. The characteristics of the Ge-68 and Ga-68 are obtained and analyzed. The production conditions are also developed, and the domestic and overseas status of the art are considered. The stacked foil target is designed using Al disc and dried Ga 2 O 3 powder, and the irradiation target is also designed. The cross section of the nat. Ga(p,xn) 68 Ge reaction is obtained using the developed target. The separation experiment of cold Ge/Ga in the H 2 SO 4 -HCl solution are carried out as a simulation experiment of the radioactive Ge/Ga sources. The separation of Ge/Ga by liquid extraction of CCl 4 in 8M HCl is also accomplished. And the synthesis experiment of the Hematophorphyrin-Ga complex is performed

  11. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

    KAUST Repository

    Mantey, J.; Hsu, W.; James, J.; Onyegam, E. U.; Guchhait, S.; Banerjee, S. K.

    2013-01-01

    Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm

  12. Growth and characterization of isotopically enriched 70Ge and 74Ge single crystals

    International Nuclear Information System (INIS)

    Itoh, K.

    1992-10-01

    Isotopically enriched 70 Ge and 74 Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm 3 volume. To our knowledge, we have grown the first 70 Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be ∼2 x cm -3 which is two order of magnitude better that of 74 Ge crystals previously grown by two different groups. Isotopic enrichment of the 70 Ge and the 74 Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed

  13. Identification and Functional Analysis of microRNAs Involved in the Anther Development in Cotton Genic Male Sterile Line Yu98-8A

    Directory of Open Access Journals (Sweden)

    Xiaojie Yang

    2016-10-01

    Full Text Available Hybrid vigor contributes in a large way to the yield and quality of cotton (Gossypium hirsutum fiber. Although microRNAs play essential regulatory roles in flower induction and development, it is still unclear if microRNAs are involved in male sterility, as the regulatory molecular mechanisms of male sterility in cotton need to be better defined. In this study, two independent small RNA libraries were constructed and sequenced from the young buds collected from the sporogenous cell formation to the meiosis stage of the male sterile line Yu98-8A and the near-isogenic line. Sequencing revealed 1588 and 1536 known microRNAs and 347 and 351 novel miRNAs from male sterile and male fertile libraries, respectively. MicroRNA expression profiles revealed that 49 conserved and 51 novel miRNAs were differentially expressed. Bioinformatic and degradome analysis indicated the regulatory complexity of microRNAs during flower induction and development. Further RT-qPCR and physiological analysis indicated that, among the different Kyoto Encyclopedia Gene and Genomes pathways, indole-3-acetic acid and gibberellic acid signaling transduction pathways may play pivotal regulatory functions in male sterility.

  14. Surface-enhanced Raman scattering study of the healing of radial fractures treated with or without Huo-Xue-Hua-Yu decoction therapy

    Science.gov (United States)

    Chen, Weiwei; Huang, Hao; Chen, Rong; Feng, Shangyuan; Yu, Yun; Lin, Duo; Lin, Jia

    2014-11-01

    This study aimed to assess, through surface-enhanced Raman scattering (SERS) spectroscopy, the incorporation of calcium hydroxyapatite (CHA ~960 cm-1) and other biochemical substances in the repair of complete radial fractures in rabbits treated with or without Huo-Xue-Hua-Yu decoction (HXHYD) therapy. A total of 18 rabbits with complete radial fractures were randomly divided into two groups; one group was treated with HXHYD therapy and the other without therapy acted as a control. The animals were sacrificed at 15, 30 and 45 d after surgery. Specimens were routinely prepared for SERS measurement and high quality SERS spectra from a mixture of bone tissues and silver nanoparticles were obtained. The mineral-to-matrix ratios from the control and treated groups were calculated. Results showed that both deposition content of CHA measured by SERS spectroscopy and the mineral-to-matrix ratio in the treated group were always greater than those of the control group during the experiment, demonstrating that HXHYD therapy is effective in improving fracture healing and that SERS spectroscopy might be a novel tool to assess fracture healing.

  15. Surface-enhanced Raman scattering study of the healing of radial fractures treated with or without Huo–Xue–Hua–Yu decoction therapy

    International Nuclear Information System (INIS)

    Chen, Weiwei; Huang, Hao; Yu, Yun; Lin, Duo; Chen, Rong; Feng, Shangyuan; Lin, Jia

    2014-01-01

    This study aimed to assess, through surface-enhanced Raman scattering (SERS) spectroscopy, the incorporation of calcium hydroxyapatite (CHA ∼960 cm −1 ) and other biochemical substances in the repair of complete radial fractures in rabbits treated with or without Huo–Xue–Hua–Yu decoction (HXHYD) therapy. A total of 18 rabbits with complete radial fractures were randomly divided into two groups; one group was treated with HXHYD therapy and the other without therapy acted as a control. The animals were sacrificed at 15, 30 and 45 d after surgery. Specimens were routinely prepared for SERS measurement and high quality SERS spectra from a mixture of bone tissues and silver nanoparticles were obtained. The mineral-to-matrix ratios from the control and treated groups were calculated. Results showed that both deposition content of CHA measured by SERS spectroscopy and the mineral-to-matrix ratio in the treated group were always greater than those of the control group during the experiment, demonstrating that HXHYD therapy is effective in improving fracture healing and that SERS spectroscopy might be a novel tool to assess fracture healing. (letter)

  16. Simple deterministic models and applications. Comment on "Coupled disease-behavior dynamics on complex networks: A review" by Z. Wang et al.

    Science.gov (United States)

    Yang, Hyun Mo

    2015-12-01

    Currently, discrete modellings are largely accepted due to the access to computers with huge storage capacity and high performance processors and easy implementation of algorithms, allowing to develop and simulate increasingly sophisticated models. Wang et al. [7] present a review of dynamics in complex networks, focusing on the interaction between disease dynamics and human behavioral and social dynamics. By doing an extensive review regarding to the human behavior responding to disease dynamics, the authors briefly describe the complex dynamics found in the literature: well-mixed populations networks, where spatial structure can be neglected, and other networks considering heterogeneity on spatially distributed populations. As controlling mechanisms are implemented, such as social distancing due 'social contagion', quarantine, non-pharmaceutical interventions and vaccination, adaptive behavior can occur in human population, which can be easily taken into account in the dynamics formulated by networked populations.

  17. A new concept: Epigenetic game theory. Comment on: ;Epigenetic game theory: How to compute the epigenetic control of maternal-to-zygotic transition; by Qian Wang et al.

    Science.gov (United States)

    Zheng, Xiu-Deng; Tao, Yi

    2017-03-01

    The evolutionary significance of the interaction between paternal and maternal genomes in fertilized zygotes is a very interesting and challenging question. Wang et al. developed the concept of epigenetic game theory, and they try to use this concept to explain the interaction between paternal and maternal genomes in fertilized zygotes [1]. They emphasize that the embryogenesis can be considered as an ecological system in which two highly distinct and specialized gametes coordinate through either cooperation or competition, or both, to maximize the fitness of embryos under Darwinian selection. More specifically, they integrate game theory to model the pattern of coordination of paternal genome and maternal genomes mediated by DNA methylation dynamics, and they called this epigenetic game theory.

  18. De Hemingway au chinois classique : le travail de la langue de l’écrivain taïwanais Wang Wen-hsing

    Directory of Open Access Journals (Sweden)

    Sandrine Marchand

    2014-04-01

    Full Text Available Dans les années 1970, l’« occidentalisation » de Wang Wen-hsing lui attire les foudres de la critique. On lui reproche, entre autres choses, de mal écrire, d’être incompréhensible et d’écrire dans une langue occidentalisée. Lui-même semble prendre pour modèle son professeur de français, dont le niveau de chinois classique était très élevé. Entre chinois classique, moderne, dialecte de sa région natale (très proche du dialecte de Taïwan, anglais, et français idéalisé, Wang Wen-hsing invente sa propre langue. Dans les manuscrits de son premier roman, il recourt au syllabaire que les enfants utilisent en cours d’apprentissage de la langue chinoise pour remplacer les caractères d’écriture, syllabaire qui disparaît ensuite à la publication. Que nous apprend l’utilisation de ce syllabaire sur le travail créatif de l’auteur ?Wang Wen-hsing est un auteur qui, entre extrême précision et violence, consacre sa vie et toute son énergie au travail de la langue. Quelle langue tente-t-il d’approcher : le chinois normatif des temps anciens, la langue américaine de Hemingway, ou un mélange des deux ?Multilingue à l’intérieur de la langue chinoise moderne, elle-même langue encore proche du chinois classique, abandonné seulement au début du xxe siècle, l’écriture romanesque de Wang Wen-hsing, qui a pour critère de valeur le « tong-shun » (clarté et aisance, est le fruit de l’oralité et d’une langue expérimentale. Ce rapport à la langue vient-il de sa situation d’émigration, de son isolement des milieux politiques et intellectuels, comme cela lui a été reproché lorsque justement on l’accusait d’écrire dans une langue incompréhensible pour le lecteur ? Pourquoi ces romans sont-ils jugés incompréhensibles ? En raison du niveau du lecteur moyen ? Pour des raisons géopolitiques, car il est un émigré en position dominante dans l’île ? Parce que la langue chinoise est dans

  19. Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

    DEFF Research Database (Denmark)

    Lu, Weifang; Li, Cheng; Lin, Guangyang

    2015-01-01

    Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...... nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors...

  20. Nuclear energy outlook: a GE perspective

    International Nuclear Information System (INIS)

    Fuller, J.

    2006-01-01

    Full text: Full text: As one of the world's leading suppliers of power generation and energy delivery technologies, GE Energy provides comprehensive solutions for coal, oil, natural gas and nuclear energy; renewable resources such as wind, solar and biogas, along with other alternative fuels. With the ever increasing demand for energy and pressures to decrease greenhouse gas emissions, global trends indicate a move towards building more base line nuclear generation capacity. As a reliable, cost-competitive option for commercial power generation, nuclear energy also addresses many of the issues the world faces when it comes to the environment. Since developing nuclear reactor technology in the 1950s, GE's Boiling Water Reactor (BWR) technology accounts for more than 90 operating plants in the world today. Building on that success, GE's ABWR design is now the first and only Generation 111 nuclear reactor in operation today. This advanced reactor technology, coupled with current construction experience and a qualified global supply chain, make ESBWR, GE's Generation III+ reactor design, an attractive option for owners considering adding nuclear generation capacity. In pursuit of new technologies, GE has teamed with Silex to develop, commercialize and license third generation laser enrichment technology. By acquiring the exclusive rights to develop and commercialize this technology, GE is positioned to support the anticipated global demands for enriched uranium. At GE, we are continuing to develop imaginative ideas and investing in products that are cost effective, increase productivity, limit greenhouse gas emissions, and improve safety and security for our customers

  1. Growth of Ferromagnetic Epitaxial Film of Hexagonal FeGe on (111) Ge Surface

    Science.gov (United States)

    Kumar, Dushyant; Joshi, P. C.; Hossain, Z.; Budhani, R. C.

    2014-03-01

    The realization of semiconductors showing ferromagnetic order at easily accessible temperatures has been of interest due to their potential use in spintronic devices where long spin life times are of key interest. We have realized the growth of FeGe thin films on Ge (111) wafers using pulsed laser deposition (PLD). The stoichiometric and single phase FeGe target used in PLD chamber has been made by arc melting. A typical θ-2 θ diffraction spectra performed on 40 nm thick FeGe film suggests the stabilization of β-Ni2In (B82-type) hexagonal phase with an epitaxial orientation of (0001)FeGe ||(111)Ge and [11-20]FeGe ||[-110]Ge. SEM images shows a granular structure with the formation of very large grains of about 100 to 500 nm in lateral dimension. The magnetization vs. temperature data taken from SQUID reveal the TC of ~ 270K. Since, PLD technique makes it easier to stabilize the B82 (Ni2In) hexagonal phase in thin FeGe films, this work opens opportunities to reinvestigate many conflicting results on various properties of the FeGe system.

  2. Ge nitride formation in N-doped amorphous Ge2Sb2Te5

    International Nuclear Information System (INIS)

    Jung, M.-C.; Lee, Y. M.; Kim, H.-D.; Kim, M. G.; Shin, H. J.; Kim, K. H.; Song, S. A.; Jeong, H. S.; Ko, C. H.; Han, M.

    2007-01-01

    The chemical state of N in N-doped amorphous Ge 2 Sb 2 Te 5 (a-GST) samples with 0-14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeN x ) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeN x was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeN x , rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature

  3. Thermal conductivity of sputtered amorphous Ge films

    International Nuclear Information System (INIS)

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka

    2014-01-01

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids

  4. GeV electron microtron

    International Nuclear Information System (INIS)

    Anon.

    1980-01-01

    A strong consensus has developed recently in the nuclear physics community that research with electromagnetic probes in the 1 to 2 GeV range generated by a high current 100% duty factor electron accelerator represents an exciting new frontier. Because of this rapidly growing interest, a design group of 5 ANL physicists and accelerator specialists recently reviewed developments in accelerator technology and developed conceptual designs for technical evaluation and subsequent cost analysis. Exploratory designs were developed for two concepts, the linac-stretcher ring and a modified microtron system. These were used to make a critical comparison of the two conceptual designs along with an improved microtron design, the double-sided microtron. The results are presented in Table VIII-I. The double-sided microtron shows promise for development into a substantially less expensive facility than a linac-ring system, but its technical feasibility remains to be established. The potential savings in capital cost are large for the microtron system, perhaps $10 million. They dictate that in the absence of a major technical limitation the double-sided microtron is the preferred design

  5. A response to Yu et al. "A forward-backward fragment assembling algorithm for the identification of genomic amplification and deletion breakpoints using high-density single nucleotide polymorphism (SNP) array", BMC Bioinformatics 2007, 8: 145.

    Science.gov (United States)

    Rueda, Oscar M; Diaz-Uriarte, Ramon

    2007-10-16

    Yu et al. (BMC Bioinformatics 2007,8: 145+) have recently compared the performance of several methods for the detection of genomic amplification and deletion breakpoints using data from high-density single nucleotide polymorphism arrays. One of the methods compared is our non-homogenous Hidden Markov Model approach. Our approach uses Markov Chain Monte Carlo for inference, but Yu et al. ran the sampler for a severely insufficient number of iterations for a Markov Chain Monte Carlo-based method. Moreover, they did not use the appropriate reference level for the non-altered state. We rerun the analysis in Yu et al. using appropriate settings for both the Markov Chain Monte Carlo iterations and the reference level. Additionally, to show how easy it is to obtain answers to additional specific questions, we have added a new analysis targeted specifically to the detection of breakpoints. The reanalysis shows that the performance of our method is comparable to that of the other methods analyzed. In addition, we can provide probabilities of a given spot being a breakpoint, something unique among the methods examined. Markov Chain Monte Carlo methods require using a sufficient number of iterations before they can be assumed to yield samples from the distribution of interest. Running our method with too small a number of iterations cannot be representative of its performance. Moreover, our analysis shows how our original approach can be easily adapted to answer specific additional questions (e.g., identify edges).

  6. Experimental determination of the Ta–Ge phase diagram

    Energy Technology Data Exchange (ETDEWEB)

    Araújo Pinto da Silva, Antonio Augusto, E-mail: aaaps@ppgem.eel.usp.br [EEL/USP – Escola de Engenharia de Lorena (EEL), Universidade de São Paulo (USP), Pólo Urbo-Industrial Gleba AI-6, 12602-810 Lorena, SP (Brazil); Coelho, Gilberto Carvalho [EEL/USP – Escola de Engenharia de Lorena (EEL), Universidade de São Paulo (USP), Pólo Urbo-Industrial Gleba AI-6, 12602-810 Lorena, SP (Brazil); UniFoa – Centro Universitário de Volta Redonda, Núcleo de Pesquisa, Campus Três Poços, Avenida Paulo Erlei Alves Abrantes, 1325, Bairro Três Poços, 27240-560 Volta Redonda, RJ (Brazil); Nunes, Carlos Angelo; Suzuki, Paulo Atsushi [EEL/USP – Escola de Engenharia de Lorena (EEL), Universidade de São Paulo (USP), Pólo Urbo-Industrial Gleba AI-6, 12602-810 Lorena, SP (Brazil); Fiorani, Jean Marc; David, Nicolas; Vilasi, Michel [Université de Lorraine, Institut Jean Lamour, Faculté des Sciences et Technologies, BP 70239, F-54506 Vandoeuvre-lès-Nancy (France)

    2013-11-05

    Highlights: •Ta–Ge phase diagram propose for the first time. •The phase αTa{sub 5}Ge{sub 3} was not observed in samples investigated in this work. •Three eutectics reactions where determined with the liquid compositions at 20.5; 28.0; 97.0 at.% Ge. -- Abstract: In the present work, the Ta–Ge phase diagram has been experimentally studied, considering the inexistence of a Ta–Ge phase diagram in the literature. The samples were prepared via arc melting and characterized by Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS) and X-ray Diffraction (XRD). The intermetallics phases βTa{sub 3}Ge, αTa{sub 3}Ge, βTa{sub 5}Ge{sub 3} and TaGe{sub 2} where confirmed in this system. Three eutectics reactions where determined with the liquid compositions at 20.5; 28.0; 97.0 at.% Ge. The phases βTa{sub 3}Ge and βTa{sub 5}Ge{sub 3} solidifies congruently while TaGe{sub 2} is formed through a peritectic transformation. The temperature of the Ta-rich eutectic (L ↔ Ta{sub ss} + βTa{sub 3}Ge) was measured by the Pirani-Alterthum method at 2440 °C and the Ge-rich eutectic (L ↔ TaGe{sub 2} + Ge{sub ss}) by DTA at 937 °C.

  7. Investigation on the dominant key to achieve superior Ge surface passivation by GeOx based on the ozone oxidation

    International Nuclear Information System (INIS)

    Wang, Xiaolei; Xiang, Jinjuan; Wang, Wenwu; Xiong, Yuhua; Zhang, Jing; Zhao, Chao

    2015-01-01

    Highlights: • The dominant key to achieve superior Ge passivation by GeO x is investigated. • The interface state density decreases with increasing the GeO x thickness. • The Ge 3+ oxide component is the dominant key to passivate the Ge surface. • The atomic structure at the GeO x /Ge interface is built by XPS. - Abstract: The dominant key to achieve superior Ge surface passivation by GeO x interfacial layer is investigated based on ozone oxidation. The interface state density (D it ) measured from low temperature conduction method is found to decrease with increasing the GeO x thickness (0.26–1.06 nm). The X-ray photoelectron spectroscopy (XPS) is employed to demonstrate the interfacial structure of GeO x /Ge with different GeO x thicknesses. And the XPS results show that Ge 3+ oxide component is responsible to the decrease of the D it due to the effective passivation of Ge dangling bonds. Therefore, the formation of Ge 3+ component is the dominant key to achieve low D it for Ge gate stacks. Our work confirms that the same physical mechanism determines the Ge surface passivation by the GeO x regardless of the oxidation methods to grow the GeO x interfacial layer. As a result, to explore a growth process that can realize sufficient Ge 3+ component in the GeO x interlayer as thin as possible is important to achieve both equivalent oxide thickness scaling and superior interfacial property simultaneously. This conclusion is helpful to engineer the optimization of the Ge gate stacks.

  8. Isothermal cross-sections of Sr-Al-Ge and Ba-Al-Ge systems at 673 K

    International Nuclear Information System (INIS)

    Kutsenok, N.L.; Yanson, T.I.

    1987-01-01

    X-ray and microstructural analyses are used to study phase equilibria in Sr-Al-Ge and Ba-Al-Ge systems. Existence of SrAl 2 Ge 2 , Sr(Al, Ge) 2 Ba(Al, Ge) 2 , Sr 3 Al 2 Ge 2 , Ba 3 Al 2 Ge 2 ternary compounds is confirmed, a new BaGe 4 binary compound and also new ternary compounds of approximate composition Sr 57 Al 30 Ge 13 and Ba 20 Al 40 Ge 40 , which crystal structure is unknown, are detected. Aluminium solubility in SrAl 4 and BaAl 4 binary compounds (0.05 atomic fraction) is determined. Ba(Al, Ge) 2 compound homogeneity region is defined more exactly (aluminium content varies from 0.27 to 0.51 at. fractions)

  9. Qing-Xin-Jie-Yu Granules in addition to conventional treatment for patients with stable coronary artery disease (QUEST Trial): study protocol for a randomized controlled trial.

    Science.gov (United States)

    Li, Shengyao; Guo, Ming; Mao, Huimin; Gao, Zhuye; Xu, Hao; Shi, Dazhuo

    2016-09-15

    Recurrent cardiovascular event remains high in stable coronary artery disease (SCAD), especially in patients with multiple risk factors, despite a high rate of use conventional treatment. Traditional Chinese Medicine (TCM) is a promising complementary and alternative medicine for treating SCAD, while evidence for its effect on long-term survival is limited. This study was designed to test if Chinese herbal medicine in addition to conventional treatment is more effective than conventional treatment alone in reducing major adverse cardiac event (MACE) for SCAD patients with multiple risk factors during a 1-year follow-up. This is a multicenter, placebo-controlled, double-blinded, randomized controlled clinical trial. A total of 1500 patients are randomized in a 1:1 ratio to receive the Qing-Xin-Jie-Yu Granules (QXJYG) or the placebo granules, twice daily for 6 months. The primary outcome is the combined outcomes including cardiac death, nonfatal myocardial infarction and revascularization. The secondary outcome is the combined outcomes including all-cause mortality, re-admission for acute coronary syndrome (ACS), heart failure, malignant supraventricular and ventricular arrhythmia influencing hemodynamics, ischemic stroke, and other thromboembolic events during 1-year follow-up. The assessment is performed at baseline (before randomization), 1, 3, 6, 9, and 12 months after randomization. This is the first multicenter trial sponsored by the national funding of China to evaluate TCM in combination with conventional treatment on 1-year survival in high-risk SCAD patients. If successful, it will provide an evidence-based complementary therapeutic approach for reducing MACE from SCAD. The trial was registered in the Chinese Clinical Trial Registry on December 28, 2013. The registration number is ChiCTR-TRC-13004370 .

  10. Xue-fu-Zhu-Yu decoction protects rats against retinal ischemia by downregulation of HIF-1α and VEGF via inhibition of RBP2 and PKM2.

    Science.gov (United States)

    Tan, Shu-Qiu; Geng, Xue; Liu, Jorn-Hon; Pan, Wynn Hwai-Tzong; Wang, Li-Xiang; Liu, Hui-Kang; Hu, Lei; Chao, Hsiao-Ming

    2017-07-14

    Retinal ischemia-related eye diseases result in visual dysfunction. This study investigates the protective effects and mechanisms of Xue-Fu-Zhu-Yu decoction (XFZYD) with respect to retinal ischemia. Retinal ischemia (I) was induced in Wistar rats by a high intraocular pressure (HIOP) of 120 mmHg for 1 h, which was followed by reperfusion of the ischemic eye; the fellow untreated eye acted as a control. Electroretinogram (ERG), biochemistry and histopathology investigations were performed. Significant ischemic changes occurred after ischemia including decreased ERG b-wave ratios, less numerous retinal ganglion cells (RGCs), reduced inner retinal thickness, fewer choline acetyltransferase (ChAT) labeled amacrine cell bodies, increased glial fibrillary acidic protein (GFAP) immunoreactivity and increased vimentin Müller immunolabeling. These were accompanied by significant increases in the mRNA/protein concentrations of vascular endothelium growth factor, hypoxia-inducible factor-1α, pyruvate kinase M2 and retinoblastoma-binding protein 2. The ischemic changes were concentration-dependently and significantly altered when XFZYD was given for seven consecutive days before or after retina ischemia, compared to vehicle. These alterations included enhanced ERG b-wave amplitudes, more numerous RGCs, enhanced inner retinal thickness, a greater number of ChAT immunolabeled amacrine cell bodies and decreased GFAP/vimentin immunoreactivity. Furthermore, decreased mRNA levels of VEGF, HIF-1α, PKM2, and RBP2 were also found. Reduced protein concentrations of VEGF, HIF-1α, PKM2, and RBP2 were also demonstrated. Furthermore, there was an inhibition of the ischemia-associated increased ratios (target protein/β-actin) in the protein levels of VEGF, HIF-1α, PKM2, and RBP2, which were induced by Shikonin, JIB-04 or Avastin. XFZYD would seem to protect against well-known retinal ischemic changes via a synergistic inhibition of RBP2 and PKM2, as well as down-regulation of HIF-1

  11. Review of the Monograph: Seleznev Yu.V. Russkie knyaz’ya pri dvore khanov Zolotoy Ordy (Russian Princes at the Court of the Golden Horde Khans

    Directory of Open Access Journals (Sweden)

    Nesin M.A.

    2017-12-01

    Full Text Available This article contains a review of the monograph by Yu.V. Seleznev published in early 2017 and dedicated to the relations of Russian princes with the Golden Horde’s khans and their status among the Golden Horde’s nobility. This work is the first comprehensive study in the historiography of this issue for all two and a half centuries of the Tartar domination. The monograph was published for the first time in 2013 and served as the basis for a doctoral dissertation, which Seleznev defended in 2015. The book was reprinted with certain changes in 2017. The book commendably contains an abundance of factual material through the use of diverse sources and strands of historiography. Seleznev examines the social terminology of Golden Horde-Russian relations, the structure of the Golden Horde’s nobility and the trips of princes to the Horde, drawing attention not only to the status of the great Vladimir and Moscow princes, but also that of other great and appanage princes. He makes a significant contribution to the resolving the debate regarding the nature of the Golden Horde’s domination in Rus’ by examining in detail the relationship of the Russian princes with the Golden Horde’s authorities in different years. The book’s author proposed to divide the Golden Horde’s “yoke” into seven periods characterized by “changes in the degree of sovereignty and jurisdiction of the khan in relation to Russian principalities”. The author of this review agrees with the main conclusions of the book under review, but at the same time he notes some reservations and criticisms, which do not, however, reduce the academic caliber of the monograph.

  12. Effect of Ge atoms on crystal structure and optoelectronic properties of hydrogenated Si-Ge films

    Science.gov (United States)

    Li, Tianwei; Zhang, Jianjun; Ma, Ying; Yu, Yunwu; Zhao, Ying

    2017-07-01

    Optoelectronic and structural properties of hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H) alloys prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) were investigated. When the Ge atoms were predominantly incorporated in amorphous matrix, the dark and photo-conductivity decreased due to the reduced crystalline volume fraction of the Si atoms (XSi-Si) and the increased Ge dangling bond density. The photosensitivity decreased monotonously with Ge incorporation under higher hydrogen dilution condition, which was attributed to the increase in both crystallization of Ge and the defect density.

  13. Inspecting the microstructure of electrically active defects at the Ge/GeOx interface

    Science.gov (United States)

    Fanciulli, Marco; Baldovino, Silvia; Molle, Alessandro

    2012-02-01

    High mobility substrates are important key elements in the development of advanced devices targeting a vast range of functionalities. Among them, Ge showed promising properties promoting it as valid candidate to replace Si in CMOS technology. However, the electrical quality of the Ge/oxide interface is still a problematic issue, in particular for the observed inversion of the n-type Ge surface, attributed to the presence of dangling bonds inducing a severe band bending [1]. In this scenario, the identification of electrically active defects present at the Ge/oxide interface and the capability to passivate or anneal them becomes a mandatory issue aiming at an electrically optimized interface. We report on the application of highly sensitive electrically detected magnetic resonance (EDMR) techniques in the investigation of defects at the interface between Ge and GeO2 (or GeOx), including Ge dangling bonds and defects in the oxide [2]. In particular we will investigate how different surface orientations, e.g. the (001) against the (111) Ge surface, impacts the microstructure of the interface defects. [1] P. Tsipas and A. Dimoulas, Appl. Phys. Lett. 94, 012114 (2009) [2] S. Baldovino, A. Molle, and M. Fanciulli, Appl. Phys. Lett. 96, 222110 (2010)

  14. Electron Transport Properties of Ge nanowires

    Science.gov (United States)

    Hanrath, Tobias; Khondaker, Saiful I.; Yao, Zhen; Korgel, Brian A.

    2003-03-01

    Electron Transport Properties of Ge nanowires Tobias Hanrath*, Saiful I. Khondaker, Zhen Yao, Brian A. Korgel* *Dept. of Chemical Engineering, Dept. of Physics, Texas Materials Institute, and Center for Nano- and Molecular Science and Technology University of Texas at Austin, Austin, Texas 78712-1062 e-mail: korgel@mail.che.utexas.edu Germanium (Ge) nanowires with diameters ranging from 6 to 50 nm and several micrometer in length were grown via a supercritical fluid-liquid-solid synthesis. Parallel electron energy loss spectroscopy (PEELS) was employed to study the band structure and electron density in the Ge nanowires. The observed increase in plasmon peak energy and peak width with decreasing nanowire diameter is attributed to quantum confinement effects. For electrical characterization, Ge nanowires were deposited onto a patterned Si/SiO2 substrate. E-beam lithography was then used to form electrode contacts to individual nanowires. The influence of nanowire diameter, surface chemistry and crystallographic defects on electron transport properties were investigated and the comparison of Ge nanowire conductivity with respect to bulk, intrinsic Ge will be presented.

  15. Ge extraction from gasification fly ash

    Energy Technology Data Exchange (ETDEWEB)

    Oriol Font; Xavier Querol; Angel Lopez-Soler; Jose M. Chimenos; Ana I. Fernandez; Silvia Burgos; Francisco Garcia Pena [Institute of Earth Sciences ' Jaume Almera' , Barcelona (Spain)

    2005-08-01

    Water-soluble germanium species (GeS{sub 2}, GeS and hexagonal-GeO{sub 2}) are generated during coal gasification and retained in fly ash. This fact together with the high market value of this element and the relatively high contents in the fly ashes of the Puertollano Integrated Gasification in Combined Cycle (IGCC) plant directed our research towards the development of an extraction process for this element. Major objectives of this research was to find a low cost and environmentally suitable process. Several water based extraction tests were carried out using different Puertollano IGCC fly ash samples, under different temperatures, water/fly ash ratios, and extraction times. High Ge extraction yields (up to 84%) were obtained at room temperature (25{sup o}C) but also high proportions of other trace elements (impurities) were simultaneously extracted. Increasing the extraction temperature to 50, 90 and 150{sup o}C, Ge extraction yields were kept at similar levels, while reducing the content of impurities, the water/fly ash ratio and extraction time. The experimental data point out the influence of chloride, calcium and sulphide dissolutions on the Ge extraction. 16 refs., 9 figs., 6 tabs.

  16. Synthesis and characterization of Ge–Cr-based intermetallic compounds: GeCr3, GeCCr3, and GeNCr3

    International Nuclear Information System (INIS)

    Lin, S.; Tong, P.; Wang, B.S.; Huang, Y.N.; Song, W.H.; Sun, Y.P.

    2014-01-01

    Highlights: • Polycrystalline samples of GeCr 3 , GeCCr 3 , and GeNCr 3 are synthesized by using solid state reaction method. • A good quality of our samples is verified by the Rietveld refinement and electrical transport measurement. • We present a comprehensive understanding of physical properties of GeCr 3 , GeCCr 3 , and GeNCr 3 . -- Abstract: We report the synthesis of GeCr 3 , GeCCr 3 , and GeNCr 3 polycrystalline compounds, and present a systematic study of this series by the measurements of X-ray diffraction (XRD), magnetism, electrical/thermal transport, specific heat, and Hall coefficient. Good quality of our samples is verified by quite small value of residual resistivity and considerably large residual resistivity ratio. Based on the Rietveld refinement of XRD data, the crystallographic parameters are obtained, and, correspondingly, the sketches of crystal structure are plotted for all the samples. The ground states of GeCr 3 , GeCCr 3 , and GeNCr 3 are paramagnetic/antiferromagnetic metal, and even a Fermi-liquid behavior is observed in electrical transport at low temperatures. Furthermore, the analysis of the thermal conductivity data suggests the electron thermal conductivity plays a major role in total thermal conductivity for GeCr 3 at low temperatures, while the phonon thermal conductivity is dominant for GeCCr 3 and GeNCr 3 at high temperatures. The negative value of Seebeck coefficient and Hall coefficient indicate that the charge carriers are electron-type for GeCr 3 , GeCCr 3 , and GeNCr 3

  17. Thermal transport in nanocrystalline Si and SiGe by ab initio based Monte Carlo simulation.

    Science.gov (United States)

    Yang, Lina; Minnich, Austin J

    2017-03-14

    Nanocrystalline thermoelectric materials based on Si have long been of interest because Si is earth-abundant, inexpensive, and non-toxic. However, a poor understanding of phonon grain boundary scattering and its effect on thermal conductivity has impeded efforts to improve the thermoelectric figure of merit. Here, we report an ab-initio based computational study of thermal transport in nanocrystalline Si-based materials using a variance-reduced Monte Carlo method with the full phonon dispersion and intrinsic lifetimes from first-principles as input. By fitting the transmission profile of grain boundaries, we obtain excellent agreement with experimental thermal conductivity of nanocrystalline Si [Wang et al. Nano Letters 11, 2206 (2011)]. Based on these calculations, we examine phonon transport in nanocrystalline SiGe alloys with ab-initio electron-phonon scattering rates. Our calculations show that low energy phonons still transport substantial amounts of heat in these materials, despite scattering by electron-phonon interactions, due to the high transmission of phonons at grain boundaries, and thus improvements in ZT are still possible by disrupting these modes. This work demonstrates the important insights into phonon transport that can be obtained using ab-initio based Monte Carlo simulations in complex nanostructured materials.

  18. One-step Ge/Si epitaxial growth.

    Science.gov (United States)

    Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

    2011-07-01

    Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

  19. Self organized formation of Ge nanocrystals in multilayers

    OpenAIRE

    Zschintzsch-Dias, Manuel

    2012-01-01

    The aim of this work is to create a process which allows the tailored growth of Ge nanocrystals for use in photovoltic applications. The multilayer systems used here provide a reliable method to control the Ge nanocrystal size after phase separation. In this thesis, the deposition of GeOx/SiO2 and Ge:SiOx~ 2/SiO2 multilayers via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation within the GeOx and Ge:SiOx~ 2 sublayers during subsequent annealing is investigated...

  20. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  1. Thermal transport through Ge-rich Ge/Si superlattices grown on Ge(0 0 1)

    Science.gov (United States)

    Thumfart, L.; Carrete, J.; Vermeersch, B.; Ye, N.; Truglas, T.; Feser, J.; Groiss, H.; Mingo, N.; Rastelli, A.

    2018-01-01

    The cross-plane thermal conductivities of Ge-rich Si/Ge superlattices have been measured using both time-domain thermoreflectance and the differential 3ω method. The superlattices were grown by molecular beam epitaxy on Ge(0 0 1) substrates. Crystal quality and structural information were investigated by x-ray diffractometry and transmission electron microscopy. The influence of segregation during growth on the composition profiles was modeled using the experimental growth temperatures and deposition rates. Those profiles were then employed to obtain parameter-free theoretical estimates of the thermal conductivity by combining first-principles calculations, Boltzmann transport theory and phonon Green’s functions. Good agreement between theory and experiment is observed. The thermal conductivity shows a strong dependence on the composition and the thickness of the samples. Moreover, the importance of the composition profile is reflected in the fact that the thermal conductivity of the superlattices is considerably lower than predicted values for alloys with the same average composition and thickness. Measurement on different samples with the same Si layer thickness and number of periods, but different Ge layer thickness, show that the thermal resistance is only weakly dependent on the Ge layers. We analyze this phenomenon based on the first-principles mode, and build an approximate parametrization showing that, in this regime, the resistivity of a SL is roughly linear on the amount of Si.

  2. Electromigration techniques for Ge(II) and Ge(IV) separation in germanium thio compounds

    Energy Technology Data Exchange (ETDEWEB)

    Facetti, J F; Vallejos, A [Asuncion Naciona Univ. (Paraguay). Inst. de Ciencias

    1971-01-01

    Using H.V. electromigration techniques, a good separation of the Ge(II) and Ge(IV) was achieved. The procedure was carried out in alkaline medium. And the final position of the separated species was established by, either neutron activation of the papa strips or chromatic reactions.

  3. The Role of Ge Wetting Layer and Ge Islands in Si MSM Photodetectors

    International Nuclear Information System (INIS)

    Mahmodi, H.; Hashim, M. R.

    2010-01-01

    In this work, Ge thin films were deposited on silicon substrates by radio frequency magnetron sputtering to form Ge islands from Ge layer on Si substrate during post-growth rapid thermal annealing (RTA). The size of the islands decreases from 0.6 to 0.1 as the rapid thermal annealing time increases from 30 s to 60 s at 900 deg. C. Not only that the annealing produces Ge islands but also wetting layer. Energy Dispersive X-ray Spectroscopy (EDX) and Scanning Electron Microscopy (SEM) were employed for structural analysis of Ge islands. Metal-Semiconductor-Metal photodetectors (MSM PDs) were fabricated on Ge islands (and wetting layer)/Si. The Ge islands and wetting layer between the contacts of the fabricated devices are etched in order to see their effects on the device. The performance of the Ge islands MSM-PD was evaluated by dark and photo current-voltage (I-V) measurements at room temperature (RT). It was found that the device with island and wetting layer significantly enhance the current gain (ratio of photo current to dark current) of the device.

  4. Electromigration techniques for Ge(II) and Ge(IV) separation in germanium thio compounds

    International Nuclear Information System (INIS)

    Facetti, J.F.; Vallejos, A.

    1971-01-01

    Using H.V. electromigration techniques, a good separation of the Ge(II) and Ge(IV) was achieved. The procedure was carried out in alkaline medium. And the final position of the separated species was established by, either neutron activation of the papa strips or chromatic reactions

  5. Precipitation and strengthening phenomena in Al-Si-Ge and Al-Cu-Si-Ge alloys

    International Nuclear Information System (INIS)

    Mitlin, D.; Morris, J.W.; Dahmen, U.; Radmilovic, V.

    2000-01-01

    The objective of this work was to determine whether Al rich Al-Si-Ge and 2000 type Al-Cu-Si-Ge alloys have sufficient hardness to be useful for structural applications. It is shown that in Al-Si-Ge it is not possible to achieve satisfactory hardness through a conventional heat treatment. This result is explained in terms of sluggish precipitation of the diamond-cubic Si-Ge phase coupled with particle coarsening. However, Al-Cu-Si-Ge displayed a uniquely fast aging response, a high peak hardness and a good stability during prolonged aging. The high hardness of the Cu containing alloy is due to the dense and uniform distribution of fine θ' precipitates (metastable Al 2 Cu) which are heterogeneously nucleated on the Si-Ge particles. High resolution TEM demonstrated that in both alloys all the Si-Ge precipitates start out, and remain multiply twinned throughout the aging treatment. Since the twinned section of the precipitate does not maintain a low index interface with the matrix, the Si-Ge precipitates are equiaxed in morphology. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

  6. Game theory in epigenetic reprogramming. Comment on: ;Epigenetic game theory: How to compute the epigenetic control of maternal-to-zygotic transition; by Qian Wang et al.

    Science.gov (United States)

    Hsu, Fei-Man; Chen, Pao-Yang

    2017-03-01

    Von Neumann and Morgenstern published the Theory of Games and Economic Behavior in 1944, describing game theory as a model in which intelligent rational decision-makers manage to find their best strategies in conflict, cooperative or other mutualistic relationships to acquire the greatest benefit [1]. This model was subsequently incorporated in ecology to simulate the ;fitness; of a species during natural selection, designated evolutionary game theory (EGT) [2]. Wang et al. proposed ;epiGame;, taking paternal and maternal genomes as ;intelligent; players that compete, cooperate or both during embryogenesis to maximize the fitness of the embryo [3]. They further extended game theory to an individual or single cell environment. During early zygote development, DNA methylation is reprogrammed such that the paternal genome is demethylated before the maternal genome. After the reset, the blastocyst is re-methylated during embryogenesis. At that time, the paternal and maternal genomes have a conflict of interest related to the expression of their own genes. The proposed epiGame models such interactive regulation between the parental genomes to reach a balance for embryo development (equation (2)).

  7. Scaling behavior can be tricky: Comment on "Universal scaling for the dilemma strength in evolutionary games" by Z. Wang et al.

    Science.gov (United States)

    Hui, Pak Ming; Xu, Chen

    2015-09-01

    Evolutionary game theory is a powerful tool for studying the emergence of cooperation among competing individuals [1]. Popularly studied games include the prisoner's dilemma [2], snowdrift game [3] and stag hunt game [4]. They have been extensively studied for the extent of cooperative behavior under different dilemma strengths. Generally, the games can be defined by a 2 × 2 matrix and thus four payoff elements, T, R, P, and S, for the possible payoffs to players when they use pure strategies against each other. Detailed definitions of the four payoffs are given in the review by Wang et al. [5]. For simplicity, it is often the case that fewer parameters are invoked, e.g. a single parameter [3] and more generally two parameters [6]. Generally speaking, reducing the number of parameters has the effect of restricting the system to a certain subspace of the unreduced case. In addition, the spatial structures, such as a well-mixed population or a population forming a complex network, that govern the competing relationship and environment of the agents, and the evolutionary rules, that govern how agents update their strategies, are vital in determining how cooperation evolves, as well documented in the references of [5].

  8. Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

    International Nuclear Information System (INIS)

    Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I

    2012-01-01

    In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

  9. The gastroesophageal (GE) scintiscan in detection of GE reflux and pulmonary aspiration in children

    International Nuclear Information System (INIS)

    Arasu, T.S.; Franken, E.A.; Wyllie, R.; Eigen, H.; Grosfeld, J.L.; Siddiqui, A.R.; Fitzgerald, J.F.

    1980-01-01

    Gastroesophageal scintiscans and barium examinations were performed on 30 children with documented GE reflux and 13 control patients. After instillation of 2 mCi of Tc99m sulfur colloid into the stomach, serial images of the abdomen and thorax were obtained. The GE scintiscan was positive in 17 of 30 with GE reflux; the barium study was positive in 15 of 30. A positive scintiscan and/or barium study was found in 21 of 30 patients with reflux, and none of the controls. Pulmonay aspiration of gastric contents was not detected by either method. We conclude that the GE scintiscan is complementary to barium studies in the diagnosis of GE reflux, and neither study approaches the accuracy of more sophisticated tests [fr

  10. 70Ge, 72Ge, 74Ge, 76Ge(d,3He)69Ga, 71Ga, 73Ga, 75Ga reactions at 26 MeV

    International Nuclear Information System (INIS)

    Rotbard, G.; La Rana, G.; Vergnes, M.; Berrier, G.; Kalifa, J.; Guilbaut, G.; Tamisier, R.

    1978-01-01

    The 70 Ge, 72 Ge, 74 Ge, 76 Ge(d, 3 He) 69 Ga, 71 Ga, 73 Ga, 75 Ga reactions have been studied at 26 MeV with 15 keV resolution (F.W.H.M), using the Orsay MP tandem accelerator and a split pole magnetic spectrometer. The spectroscopic factors are determined for 15 levels in 69 Ga and 11 levels in each of the 3 other Ga isotopes. Level schemes are proposed for the practically unknown 73 Ga and 75 Ga. Very simple model wave functions previously proposed for Ge nuclei are seen to reproduce quite well the measured occupation numbers for the proton orbitals. Anomalies in these occupation numbers are observed between Z=31 and 32 and between N=40 and 42, this last one corresponding to the structural transition observed recently in a comparison of the (p,t) and (t,p) reactions. These anomalies could be related to changes in the nuclear shape

  11. Shen-Qi-Jie-Yu-Fang exerts effects on a rat model of postpartum depression by regulating inflammatory cytokines and CD4+CD25+ regulatory T cells

    Directory of Open Access Journals (Sweden)

    Li JY

    2016-04-01

    Full Text Available Jingya Li,1,* Ruizhen Zhao,1,* Xiaoli Li,1 Wenjun Sun,1 Miao Qu,1 Qisheng Tang,1 Xinke Yang,1 Shujing Zhang2 1Third Affiliated Hospital, 2School of Basic Medical Sciences, Beijing University of Chinese Medicine, Beijing, People’s Republic of China *These authors contributed equally to this work Background: Shen-Qi-Jie-Yu-Fang (SJF is composed of eight Chinese medicinal herbs. It is widely used in traditional Chinese medicine for treating postpartum depression (PPD. Previous studies have shown that SJF treats PPD through the neuroendocrine mechanism. Aim: To further investigate the effect of SJF on the immune system, including the inflammatory response system and CD4+CD25+ regulatory T (Treg cells. Materials and methods: Sprague Dawley rats were used to create an animal model of PPD by inducing hormone-simulated pregnancy followed by hormone withdrawal. After hormone withdrawal, the PPD rats were treated with SJF or fluoxetine for 1, 2, and 4 weeks. Levels of Treg cells in peripheral blood were measured by flow cytometry analysis. Serum interleukin (IL-1β and IL-6 were evaluated by enzyme-linked immunosorbent assay, and gene and protein expressions of IL-1RI, IL-6Rα, and gp130 in the hippocampus were observed by reverse-transcription polymerase chain reaction and Western blot. Results: Serum IL-1β in PPD rats increased at 2 weeks and declined from then on, while serum IL-6 increased at 1, 2, and 4 weeks. Both IL-1β and IL-6 were downregulated by SJF and fluoxetine. Changes in gene and protein expressions of IL-1RI and gp130 in PPD rats were consistent with changes in serum IL-1β, and were able to be regulated by SJF and fluoxetine. The levels of Treg cells were negatively correlated with serum IL-1β and IL-6, and were decreased in PPD rats. The levels of Treg cells were increased by SJF and fluoxetine. Conclusion: Dysfunction of proinflammatory cytokines and Tregs in different stages of PPD was attenuated by SJF and fluoxetine through

  12. Sheng-ji Hua-yu formula promotes diabetic wound healing of re-epithelization via Activin/Follistatin regulation.

    Science.gov (United States)

    Kuai, Le; Zhang, Jing-Ting; Deng, Yu; Xu, Shun; Xu, Xun-Zhe; Wu, Min-Feng; Guo, Dong-Jie; Chen, Yu; Wu, Ren-Jie; Zhao, Xing-Qiang; Nian, Hua; Li, Bin; Li, Fu-Lun

    2018-01-29

    Sheng-ji Hua-yu(SJHY) formula is one of the most useful Traditional Chinese medicine (TCM) in the treatment of the delayed diabetic wound. However, elucidating the related molecular biological mechanism of how the SJHY Formula affects excessive inflammation in the process of re-epithelialization of diabetic wound healing is a task urgently needed to be fulfilled. The objectives of this study is to evaluate the effect of antagonisic expression of pro-/anti-inflammatory factors on transforming growth factor-β(TGF-β) superfamily (activin and follistatin) in the process of re-epithelialization of diabetic wound healing in vivo, and to characterize the involvement of the activin/follistatin protein expression regulation, phospho-Smad (pSmad2), and Nuclear factor kappa B p50 (NF-kB) p50 in the diabetic wound healing effects of SJHY formula. SJHY Formula was prepared by pharmaceutical preparation room of Yueyang Hospital of Integrated Traditional Chinese and Western Medicine. Diabetic wound healing activity was evaluated by circular excision wound models. Wound healing activity was examined by macroscopic evaluation. Activin/follistatin expression regulation, protein expression of pSmad2 and NF-kB p50 in skin tissue of wounds were analyzed by Real Time PCR, Western blot, immunohistochemistry and hematoxylin and eosin (H&E) staining. Macroscopic evaluation analysis showed that wound healing of diabetic mice was delayed, and SJHY Formula accelerated wound healing time of diabetic mice. Real Time PCR analysis showed higher mRNA expression of activin/follistatin in diabetic delayed wound versus the wound in normal mice. Western Blot immunoassay analysis showed reduction of activin/follistatin proteins levels by SJHY Formula treatment 15 days after injury. Immunohistochemistry investigated the reduction of pSmad2 and NF-kB p50 nuclear staining in the epidermis of diabetic SJHY versus diabetic control mice on day 15 after wounding. H&E staining revealed that SJHY Formula

  13. Therapeutic effects of Qian-Yu decoction and its three extracts on carrageenan-induced chronic prostatitis/chronic pelvic pain syndrome in rats.

    Science.gov (United States)

    Zhang, Keda; Zeng, Xiaobin; Chen, Yonggang; Zhao, Rong; Wang, Hui; Wu, Jinhu

    2017-01-25

    Qian-Yu decoction (QYD) is a traditional Chinese medicinal recipe composed of Radix astragali (Astragalus membranaceus (Fisch.) Bunge var. mongholicus (Bunge) P.K. Hsiao, Fabaceae ), Herba epimedii (Epimedium brevicornum Maxim., Berberidaceae), Herba leonuri (Leonurus japonicus Houtt., Lamiaceae), Cortex phellodendri (Phellodendron chinense Schneid., Rutaceae) and Radix achyranthis bidentatae (Achyranthes bidentata Bl., Amaranthaceae). This study aimed to evaluate the therapeutic activity of QYD against carrageenan-induced chronic prostatic/chronic pelvic pain syndrome (CP/CPPS) in rats and further elucidate its effective components. Three types of components, total polysaccharides, total flavonoids and total saponins were separately extracted from QYD. Carrageenan-induced CP/CPPS rats were intragastrically administered with lyophilized product of QYD, individual extracts and all the combined forms of extracts for three weeks. Prostatic index (PI) was determined and histopathological analysis was performed. The levels of tumor necrosis factor alpha (TNF-α), interleukin-1 beta (IL-1β), cyclooxygenase-2 (COX-2) and prostaglandin E2 (PEG2) in rat prostate tissues were measured using ELISA. The production of inducible nitric oxide synthase (iNOS) was evaluated by an enzymatic activity assay, and the release of nitric oxide (NO) was determined by a nitrate/nitrite assay. Treatment with QYD significantly ameliorated the histological changes of CP/CPPS rats and reduced the PI by 44.3%, with a marked downregulation of TNF-α (42.8% reduction), IL-1β (45.3%), COX-2 (36.6%), PGE2 (44.2%), iNOS (54.1%) and NO (46.0%). Each of three extracts attenuated the symptom of CP/CPPS, but much more weakly than QYD. The combined administration of three extracts showed efficacy comparable to that of QYD while better than that of any combination of two extracts. A principal component analysis of the six inflammatory mediators as variables indicated that the effects of TS on CP

  14. Potential effectiveness of Chinese herbal medicine Yu ping feng san for adult allergic rhinitis: a systematic review and meta-analysis of randomized controlled trials.

    Science.gov (United States)

    Luo, Qiulan; Zhang, Claire Shuiqing; Yang, Lihong; Zhang, Anthony Lin; Guo, Xinfeng; Xue, Charlie Changli; Lu, Chuanjian

    2017-11-06

    Chinese herbal medicine formula Yu ping feng san (YPFS) is commonly used for allergic rhinitis (AR). Previous review had summarized the effectiveness and safety of YPFS, however without any subgroup analysis performed to provide detailed evidence for guiding clinical practice. YPFS was recommended for the management of AR by Chinese medicine clinical practice guideline, but the treatment duration of YPFS was also not specified. The aim of this study is to evaluate the effectiveness and safety of YPFS in treating adult AR with the most recent evidence, and attempt to specify the duration of utilisation through subgroup meta-analyses. Seven databases were searched from their inceptions to September 2017. Randomized controlled trials (RCTs) evaluating YPFS for adult AR were included. Methodological quality of studies was assessed using the Cochrane risk of bias tool. Meta-analysis and subgroup meta-analyses were conducted for evaluating the effectiveness of YPFS. The Grading of Recommendations Assessment, Development and Evaluation (GRADE) approach was used for rating the quality of evidence. Twenty-two RCTs involving 23 comparisons were included in this review. YPFS was compared to placebo, pharmacotherapy, and used as an add-on treatment compared to pharmacotherapy. Meta-analyses were feasible for the outcomes of four individual nasal symptom scores and "effective rate". Four individual nasal symptom scores decreased after YPFS' combination treatment: itchy nose (MD-0.46, 95% CI[-0.50, -0.42]), sneezing (MD-0.41, 95% CI[-0.47, -0.35]), blocked nose (MD-0.46, 95% CI[-0.54, -0.39]) and runny nose (MD-0.42, 95% CI[-0.58, -0.26]). Based on "effective rate", meta-analysis showed that YPFS did not achieve better effect than pharmacotherapy (RR1.07, 95%CI [0.94, 1.22), but its combination with pharmacotherapy seemed more effective than pharmacotherapy alone (RR1.27, 95%CI [1.19, 1.34]) (low quality). Subgroup analysis suggested that YPFS was not superior to the second

  15. Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

    Science.gov (United States)

    Liao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.

    2018-05-01

    We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5–95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5–4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1‑x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1‑x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core ‘building block’ required for the fabrication of Ge-based MOS devices.

  16. Magnetic properties of TbTiGe

    International Nuclear Information System (INIS)

    Prokes, K.; Tegus, O.; Brueck, E.; Gortenmulder, T.J.; Boer, F.R. de; Buschow, K.H.J.

    2001-01-01

    We have studied the magnetic properties of the compound TbTiGe by means of neutron diffraction in the temperature range 1.7-310 K. We also report on magnetization measurements made at different temperatures and fields. The compound TbTiGe adopts the tetragonal CeFeSi-structure type and orders antiferromagnetically at T N =286 K. The structure is collinear antiferromagnetic in the whole temperature range below T N , with the magnetic moments aligned along the tetragonal c-axis. The uncommon shape of the temperature dependence of the magnetization observed in our sample is attributed to small amounts of the ferromagnetic low-temperature modification of TbTiGe

  17. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

    2016-01-01

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  18. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang

    2016-10-28

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  19. GE will finance 614-MW cogeneration plant

    International Nuclear Information System (INIS)

    Anon.

    1990-01-01

    The General Electric Power Funding Corporation, a unit of GE Capital, will provide up to $870 million in construction and permanent financing, and letters of credit to Cogen Technologies of Houston, Texas. The agreement will fund the construction of a 614-megawatt (MW), combined-cycle cogeneration plant to be built in Linden, New Jersey, and for the purchase of gas properties. The plant will be owned by Cogen Technologies. The financing is one of the largest packages ever for a cogeneration plant, GE said

  20. Phase diagram of the Ge-rich of the Ba–Ge system and characterisation of single-phase BaGe4

    International Nuclear Information System (INIS)

    Prokofieva, Violetta K.; Pavlova, Lydia M.

    2014-01-01

    Highlights: • The Ba-Ge phase diagram for the range 50–100 at.% Ge was constructed. • Single-phase BaGe 4 grown by the Czochralski method was characterised. • A phenomenological model for a liquid-liquid phase transition is proposed. - Abstract: The Ba–Ge binary system has been investigated by several authors, but some uncertainties remain regarding phases with Ba/Ge ⩽ 2. The goal of this work was to resolve the uncertainty about the current phase diagram of Ba–Ge by performing DTA, X-ray powder diffraction, metallographic and chemical analyses, and measurements of the electrical conductivity and viscosity. The experimental Ba–Ge phase diagram over the composition range of 50–100 at.% Ge was constructed from the cooling curves and single-phase BaGe 4 grown by the Czochralski crystal pulling method was characterised. Semiconducting BaGe 4 crystallised peritectically from the liquid phase near the eutectic. In the liquid state, the caloric effects were observed in the DTA curves at 1050 °C where there are no definite phase lines in the Ba–Ge phase diagram. These effects are confirmed by significant changes in the viscosity and electrical conductivity of a Ba–Ge alloy with eutectic composition at this temperature. A phenomenological model based on two different approaches, a phase approach and a chemical approach, is proposed to explain the isothermal liquid–liquid phase transition observed in the Ba–Ge system from the Ge side. Our results suggest that this transition is due to the peritectic reactions in the liquid phase. This reversible phase transition results in the formation of precursors of various metastable clathrate phases and is associated with sudden changes in the structure of Ba–Ge liquid alloys. Characteristics of both first- and second-order phase transitions are observed. Charge transfer appears to play an important role in this transition

  1. Validation of the YuWell YE690A upper-arm blood pressure monitor, for clinic use and self-measurement, according to the European Society of Hypertension International Protocol revision 2010.

    Science.gov (United States)

    Chen, Qi; Lei, Lei; Li, Yan; Wang, Ji-Guang

    2017-10-01

    The present study aimed to evaluate the accuracy of the automated oscillometric upper-arm blood pressure monitor YuWell YE690A for blood pressure measurement according to the International Protocol of the European Society of Hypertension revision 2010. Systolic and diastolic blood pressures were measured sequentially in 33 adult Chinese (12 women, 44.2 years of mean age) using a mercury sphygmomanometer (two observers) and the YE690A device (one supervisor). A total of 99 pairs of comparisons were obtained from 33 participants for judgments in two parts with three grading phases. All the blood pressure requirements were fulfilled. The YuWell YE690A device achieved the targets in part 1 of the validation study. The number of absolute differences between device and observers within 5, 10, and 15 mmHg was 79/99, 96/99, and 97/99, respectively, for systolic blood pressure and 72/99, 95/99, and 98/99, respectively, for diastolic blood pressure. The device also fulfilled the criteria in part 2 of the validation study. Thirty-one and 25 participants for systolic and diastolic blood pressure, respectively, had at least two of the three device-observer differences within 5 mmHg (required ≥24). No participant for systolic and two participants for diastolic blood pressure had all the three device-observer comparisons greater than 5 mmHg. The YuWell blood pressure monitor YE690A has passed the requirements of the International Protocol revision 2010 and hence can be recommended for blood pressure measurement in adults.

  2. Preparation of special purity Ge - S - I and Ge - Se - I glasses

    Science.gov (United States)

    Velmuzhov, A. P.; Sukhanov, M. V.; Shiryaev, V. S.; Kotereva, T. V.; Snopatin, G. E.; Churbanov, M. F.

    2017-05-01

    The paper considers the new approaches for the production of special pure Ge - S - I and Ge - Se - I glasses via the germanium(IV) iodide, germanium(II) sulfide, as well as the Ge2S3, Ge2S3I2 and Ge2Se3I2 glassy alloys. The glass samples containing 0.03-0.17 ppm(wt) hydrogen impurity in the form of SH-group, 0.04-0.15 ppm(wt) hydrogen impurity in the form of SeH-group, and 0.5-7.8 ppm(wt) oxygen impurity in the form of Ge-O were produced. Using a crucible technique, the single-index [GeSe4]95I5 glass fibers of 300-400 μm diameter were drawn. The minimum optical losses in the best fiber were 1.7 dB/m at a wavelength of 5.5 μm; the background optical losses were within 2-3 dB/m in the spectral range of 2.5-8 μm.

  3. Molecules for materials: germanium hydride neutrals and anions. Molecular structures, electron affinities, and thermochemistry of GeHn/GeHn- (n = 0-4) and Ge2Hn/Ge2Hn(-) (n = 0-6).

    Science.gov (United States)

    Li, Qian-Shu; Lü, Rui-Hua; Xie, Yaoming; Schaefer, Henry F

    2002-12-01

    The GeH(n) (n = 0-4) and Ge(2)H(n) (n = 0-6) systems have been studied systematically by five different density functional methods. The basis sets employed are of double-zeta plus polarization quality with additional s- and p-type diffuse functions, labeled DZP++. For each compound plausible energetically low-lying structures were optimized. The methods used have been calibrated against a comprehensive tabulation of experimental electron affinities (Chemical Reviews 102, 231, 2002). The geometries predicted in this work include yet unknown anionic species, such as Ge(2)H(-), Ge(2)H(2)(-), Ge(2)H(3)(-), Ge(2)H(4)(-), and Ge(2)H(5)(-). In general, the BHLYP method predicts the geometries closest to the few available experimental structures. A number of structures rather different from the analogous well-characterized hydrocarbon radicals and anions are predicted. For example, a vinylidene-like GeGeH(2) (-) structure is the global minimum of Ge(2)H(2) (-). For neutral Ge(2)H(4), a methylcarbene-like HGë-GeH(3) is neally degenerate with the trans-bent H(2)Ge=GeH(2) structure. For the Ge(2)H(4) (-) anion, the methylcarbene-like system is the global minimum. The three different neutral-anion energy differences reported in this research are: the adiabatic electron affinity (EA(ad)), the vertical electron affinity (EA(vert)), and the vertical detachment energy (VDE). For this family of molecules the B3LYP method appears to predict the most reliable electron affinities. The adiabatic electron affinities after the ZPVE correction are predicted to be 2.02 (Ge(2)), 2.05 (Ge(2)H), 1.25 (Ge(2)H(2)), 2.09 (Ge(2)H(3)), 1.71 (Ge(2)H(4)), 2.17 (Ge(2)H(5)), and -0.02 (Ge(2)H(6)) eV. We also reported the dissociation energies for the GeH(n) (n = 1-4) and Ge(2)H(n) (n = 1-6) systems, as well as those for their anionic counterparts. Our theoretical predictions provide strong motivation for the further experimental study of these important germanium hydrides. Copyright 2002 Wiley

  4. Strain distribution of confined Ge/GeO2 core/shell nanoparticles engineered by growth environments

    Science.gov (United States)

    Wei, Wenyan; Yuan, Cailei; Luo, Xingfang; Yu, Ting; Wang, Gongping

    2016-02-01

    The strain distributions of Ge/GeO2 core/shell nanoparticles confined in different host matrix grown by surface oxidation are investigated. The simulated results by finite element method demonstrated that the strains of the Ge core and the GeO2 shell strongly depend on the growth environments of the nanoparticles. Moreover, it can be found that there is a transformation of the strain on Ge core from tensile to compressive strain during the growth of Ge/GeO2 core/shell nanoparticles. And, the transformation of the strain is closely related with the Young's modulus of surrounding materials of Ge/GeO2 core/shell nanoparticles.

  5. The effect of Ge precursor on the heteroepitaxy of Ge1-x Sn x epilayers on a Si (001) substrate

    Science.gov (United States)

    Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; Allred, Phil; Schulze, Jorg; Myronov, Maksym

    2018-03-01

    The heteroepitaxial growth of Ge1-x Sn x on a Si (001) substrate, via a relaxed Ge buffer, has been studied using two commonly available commercial Ge precursors, Germane (GeH4) and Digermane (Ge2H6), by means of chemical vapour deposition at reduced pressures (RP-CVD). Both precursors demonstrate growth of strained and relaxed Ge1-x Sn x epilayers, however Sn incorporation is significantly higher when using the more reactive Ge2H6 precursor. As Ge2H6 is significantly more expensive, difficult to handle or store than GeH4, developing high Sn content epilayers using the latter precursor is of great interest. This study demonstrates the key differences between the two precursors and offers routes to process optimisation which will enable high Sn content alloys at relatively low cost.

  6. Thermal transport property of Ge34 and d-Ge investigated by molecular dynamics and the Slack's equation

    International Nuclear Information System (INIS)

    Han-Fu, Wang; Wei-Guo, Chu; Yan-Jun, Guo; Hao, Jin

    2010-01-01

    In this study, we evaluate the values of lattice thermal conductivity κ L of type II Ge clathrate (Ge 34 ) and diamond phase Ge crystal (d-Ge) with the equilibrium molecular dynamics (EMD) method and the Slack's equation. The key parameters of the Slack's equation are derived from the thermodynamic properties obtained from the lattice dynamics (LD) calculations. The empirical Tersoff's potential is used in both EMD and LD simulations. The thermal conductivities of d-Ge calculated by both methods are in accordance with the experimental values. The predictions of the Slack's equation are consistent with the EMD results above 250 K for both Ge 34 and d-Ge. In a temperature range of 200–1000 K, the κ L value of d-Ge is about several times larger than that of Ge 34 . (condensed matter: structure, thermal and mechanical properties)

  7. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

    KAUST Repository

    Mantey, J.

    2013-01-01

    Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.

  8. Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure

    Science.gov (United States)

    Bashir, A.; Gallacher, K.; Millar, R. W.; Paul, D. J.; Ballabio, A.; Frigerio, J.; Isella, G.; Kriegner, D.; Ortolani, M.; Barthel, J.; MacLaren, I.

    2018-01-01

    A Ge-SiGe multiple quantum well structure created by low energy plasma enhanced chemical vapour deposition, with nominal well thickness of 5.4 nm separated by 3.6 nm SiGe spacers, is analysed quantitatively using scanning transmission electron microscopy. Both high angle annular dark field imaging and electron energy loss spectroscopy show that the interfaces are not completely sharp, suggesting that there is some intermixing of Si and Ge at each interface. Two methods are compared for the quantification of the spectroscopy datasets: a self-consistent approach that calculates binary substitutional trends without requiring experimental or computational k-factors from elsewhere and a standards-based cross sectional calculation. Whilst the cross section approach is shown to be ultimately more reliable, the self-consistent approach provides surprisingly good results. It is found that the Ge quantum wells are actually about 95% Ge and that the spacers, whilst apparently peaking at about 35% Si, contain significant interdiffused Ge at each side. This result is shown to be not just an artefact of electron beam spreading in the sample, but mostly arising from a real chemical interdiffusion resulting from the growth. Similar results are found by use of X-ray diffraction from a similar area of the sample. Putting the results together suggests a real interdiffusion with a standard deviation of about 0.87 nm, or put another way—a true width defined from 10%-90% of the compositional gradient of about 2.9 nm. This suggests an intrinsic limit on how sharp such interfaces can be grown by this method and, whilst 95% Ge quantum wells (QWs) still behave well enough to have good properties, any attempt to grow thinner QWs would require modifications to the growth procedure to reduce this interdiffusion, in order to maintain a composition of ≥95% Ge.

  9. Magnetic behavior of Si-Ge bond in SixGe4-x nano-clusters

    Science.gov (United States)

    Nahali, Masoud; Mehri, Ali

    2018-06-01

    The structure of SixGe4-x nano-clusters were optimized by MPW1B95 level of theory using MG3S and SDB-aug-cc-PVTZ basis set. The agreement of the calculated ionization and dissociation energies with experimental values validates the reported structures of nano-clusters and justifies the use of hybrid meta density functional method. Since the Si-Si bond is stronger than Si-Ge and Ge-Ge bonds, the Si-Si, Si-Ge, and Ge-Ge diagonal bonds determine the precedence of the stability in these nano-clusters. The hybrid meta density functional calculations were carried out to investigate the adsorption of CO on all possible SixGe4-x nano-clusters. It was found that the silicon atom generally makes a stronger bond with CO than germanium and thereby preferentially affects the shape of structures having higher multiplicity. In Si-Ge structures with higher spin more than 95% of spins accumulate on positions with less bonds to other atoms of the cluster. Through CO adsorption on these clusters bridge structures are made that behave as spin bridge which conduct the spin from the nano-cluster surface to the adsorbate atoms. A better understanding of bridged structures was achieved upon introducing the 'spin bridge' concept. Based on exhaustive spin density analysis, it was found that the reason for the extra negative charge on oxygen in the bridged structures is the relocation of spin from the surface through the bridge.

  10. 文化漫游与精神家园——当代中国文化散文的公共语境 (Cultural Tours and the Spiritual Home: On Yu Qiuyu and Contemporary Chinese Cultural Essays

    Directory of Open Access Journals (Sweden)

    Yi Zheng

    2007-01-01

    Full Text Available The essay explores the public social dimension of the “great cultural essays” as a popular post-socialist genre. It looks into the genre’s emergence and popularity as part of the making of a middleclass taste in contemporary China and its claim to a re-imagined cultural national inheritance. In particular, the discussion focuses on the example of essayist Yu Qiuyu and examines the implications of his successful transformation of an obsolete historical “Culture” into a desirable commodity that offers spiritual home to the aspiring and successful of a “Greater China”.

  11. A New Book on the Law System of the Golden Horde: Pochekaev R.Yu. Legal Culture of the Golden Horde (Historical and Legal Essays) (Moscow: Yurlitinform, 2015. 312 p.)

    OpenAIRE

    D.V. Nefedov

    2016-01-01

    This book is a study at the intersection of such academic disciplines as general history, history of state and law and source study. The subcect of R.Yu. Pochevalev’s book appears very relevant since the interest of the scientific community and readership toward the Golden Horde and its role in the history of the Russian state remains traditionally high for several centuries. However, the author is trying to take a fresh look at this state and refute the stereotype of the Golden Horde as a...

  12. Exotic aspects of black holes: an astronaut near the horizon (on the methodological note by A A Grib and Yu V Pavlov 'Is it possible to see the infinite future of the Universe when falling into a black hole?')

    International Nuclear Information System (INIS)

    Cherepashchuk, Anatolii M

    2009-01-01

    We comment on the methodological note by A A Grib and Yu V Pavlov [Phys. Usp. 52 257 (2009)] to show that its authors are incorrect in understanding a passage that they quote from A M Cherepashchuk's book Black Holes in the Universe (Fryazino: Vek-2, 2005, p.7) and which supposes an astronaut to be at rest in the vicinity of the horizon (not to fall freely into a black hole!). With this error corrected, Grib and Pavlov's note is quite useful methodologically. (letters to the editors)

  13. Distribution and Substitution Mechanism of Ge in a Ge-(Fe-Bearing Sphalerite

    Directory of Open Access Journals (Sweden)

    Nigel J. Cook

    2015-03-01

    Full Text Available The distribution and substitution mechanism of Ge in the Ge-rich sphalerite from the Tres Marias Zn deposit, Mexico, was studied using a combination of techniques at μm- to atomic scales. Trace element mapping by Laser Ablation Inductively Coupled Mass Spectrometry shows that Ge is enriched in the same bands as Fe, and that Ge-rich sphalerite also contains measurable levels of several other minor elements, including As, Pb and Tl. Micron- to nanoscale heterogeneity in the sample, both textural and compositional, is revealed by investigation using Focused Ion Beam-Scanning Electron Microscopy (FIB-SEM combined with Synchrotron X-ray Fluorescence mapping and High-Resolution Transmission Electron Microscopy imaging of FIB-prepared samples. Results show that Ge is preferentially incorporated within Fe-rich sphalerite with textural complexity finer than that of the microbeam used for the X-ray Absorption Near Edge Structure (XANES measurements. Such heterogeneity, expressed as intergrowths between 3C sphalerite and 2H wurtzite on  zones, could be the result of either a primary growth process, or alternatively, polystage crystallization, in which early Fe-Ge-rich sphalerite is partially replaced by Fe-Ge-poor wurtzite. FIB-SEM imaging shows evidence for replacement supporting the latter. Transformation of sphalerite into wurtzite is promoted by (111* twinning or lattice-scale defects, leading to a heterogeneous ZnS sample, in which the dominant component, sphalerite, can host up to ~20% wurtzite. Ge K-edge XANES spectra for this sphalerite are identical to those of the germanite and argyrodite standards and the synthetic chalcogenide glasses GeS2 and GeSe2, indicating the Ge formally exists in the tetravalent form in this sphalerite. Fe K-edge XANES spectra for the same sample indicate that Fe is present mainly as Fe2+, and Cu K-edge XANES spectra are characteristic for Cu+. Since there is no evidence for coupled substitution involving a monovalent

  14. Shallow acceptors in strained Ge/Ge1-xSix heterostructures with quantum wells

    International Nuclear Information System (INIS)

    Aleshkin, V.Ya.; Andreev, B.A.; Gavrilenko, V.I.; Erofeeva, I.V.; Kozlov, D.V.; Kuznetsov, O.A.

    2000-01-01

    Dependence of acceptor localized state energies in quantum wells (strained layers of Ge in heterostructures Ge/Ge 1-x Si x ) on the width of quantum well and position in it was studied theoretically. Spectrum of impurity absorption in the far infrared range was calculated. Comparison of the results calculated and observed photoconductivity spectra permits estimating acceptor distribution over quantum well and suggesting conclusion that acceptors can be largely concentrated near heteroboundaries. Absorption spectrum was calculated bearing in mind resonance impurity states, which permits explaining the observed specific features in the photoconductivity spectrum short-wave range by transition to resonance energy levels, bound to upper subzones of dimensional quantization [ru

  15. Isobaric analogue states of 73Ge via 72Ge(3He,d)73As reaction

    International Nuclear Information System (INIS)

    Ramaswamy, C.R.; Puttaswamy, N.G.; Sarma, N.

    1974-01-01

    The 72 Ge( 3 He,d) 73 As reaction has been studied at 20 MeV incident 3 He energy using an MP tandem and a multigap spectrograph. The energy spectrum of deuterons in the region between 9 to 10.5 MeV excitation energy of 73 As shows analogue states corresponding to G.S., 570, 673, 805, 900, 1050, and 1350 KeV states of 73 Ge. Angular distributions for the analogue states and 1-values of the transferred protons are extracted. The results are compared with available data on the levels of 73 Ge. (author)

  16. Analisis senyawa volatil dari ekstrak tanaman yang berpotensi sebagai atraktan parasitoid telur wereng batang coklat, Anagrus nilaparvatae (Pang et Wang (Hymenoptera: Mymaridae

    Directory of Open Access Journals (Sweden)

    Surjani Wonorahardjo

    2015-09-01

    Full Text Available Plants produce volatiles as communication cues intra- or inter- species. Infested plants by herbivores will produce volatiles as indirect defense mechanism that attracts natural enemies of herbivores. Analysis of volatiles compounds produced by rice plant as result of infested brown plant hopper (BPH, Nilaparvata lugens Stâl, was done to identify compounds in the volatiles that potentially can be used as attractant for egg parasitoids of BPH, Anagrus nilaparvatae (Pang et Wang (Hymenoptera: Mymaridae. This research was an early stage to develop formulation of parasitoid attractant. The research activities include volatiles extraction of infested rice stem by BPH eggs using acetone, n-hexane as the extraction solvents; analyses of volatile compounds with GC-MS; and bioassay of parasitoid orientation behavior to the volatiles using olfactometer methods. Extraction methods applied were maceration and continuous extraction followed by concentration. Bioassay on the parasitoid orientation behavior was done by using Y-tube olfactometer and every lot of bioassay using 30 parasitoid females with 3 replicates. The results showed that the volatile compounds of extract of infested rice stem by BPH eggs comprise of 16 components. The highest proportion of the components extracted with acetone is 2-Pentanone, 4-hydroxy-4-methyl (19,9%, while those with n-hexane is Hexanedioic acid, dioctyl ester (65%. A. nilaparvatae showed positive response to the volatiles extracted from infested rice plant by N. lugens eggs. Therefore, the volatiles can be used as an attractant for the egg A. nilaparvatae to support rice pest management.

  17. Absorption of SO/sub 2/ by pecan (Carya illinoensis (Wang) K. Koch) and alfalfa (Medicago sativa L. ) and its effect on net photosynthesis

    Energy Technology Data Exchange (ETDEWEB)

    Sisson, W.B.; Booth, J.A.; Throneberry, G.O.

    1981-06-01

    Absorption rates of SO/sub 2/ by pecan (Carya illinoensis (Wang) K. Koch) leaflets exposed to 2.6, 5.2, and 7.8 mg SO/sub 2/ m/sup -3/ were measured over a 2 h period. SO/sub 2/ was rapidly absorbed by the leaflets in all treatments during the initial 30-50 min; the rate of uptake decreased to a rather constant level thereafter. Total SO/sub 2/ absorbed during the 2 h period was 15.6, 25.6, and 38.9 nmol cm/sup -2/ for the low, medium, and high SO/sub 2/ concentrations, respectively. Reductions in net photosynthetic rates were proportional to ambient SO/sub 2/ concentrations and total SO/sub 2/ absorbed. Partial photosynthetic recovery occurred in all treatments during a 2 hr post-treatment period and full recovery occurred during a 12 h dark period. Exposure to SO/sub 2/ resulted in slight increases in stomatal and boundary layer resistances to CO/sub 2/ and substantial increases in residual resistances. Absorption rates of SO/sub 2/ by alfalfa (Medicago sativa L.) exposed to 5.2 mg SO/sub 2/ m/sup -3/ for 1 h were approximately double those of pecan exposed to the same ambient SO/sub 2/ concentration. Alfalfa net photosynthetic rates were reduced 74% after 1 h exposure to 5.2 mg SO/sub 2/ m/sup -3/ while a depression of 42% occurred in pecan.

  18. Petrochemistry and zircon U-Pb geochronology of granitic rocks in the Wang Nam Khiao area, Nakhon Ratchasima, Thailand: Implications for petrogenesis and tectonic setting

    Science.gov (United States)

    Fanka, Alongkot; Tsunogae, Toshiaki; Daorerk, Veerote; Tsutsumi, Yukiyasu; Takamura, Yusuke; Sutthirat, Chakkaphan

    2018-05-01

    Carboniferous biotite granite, Late Permian hornblende granite, and Triassic biotite-hornblende granite, all of which belong to the Eastern Granite Belt, expose in the Wang Nam Khiao area, Nakhon Ratchasima, northeastern Thailand. The Carboniferous biotite granite is dominated by quartz, K-feldspar, plagioclase, and biotite. The Late Permian hornblende granite contains dominant assemblages of plagioclase, quartz, K-feldspar, hornblende, and minor amount of biotite, while the Triassic biotite-hornblende granite consists of quartz, plagioclase, K-feldspar with small amounts of biotite, and hornblende. The REE patterns with steep decrease from light to heavy REE together with the LILE (e.g. K, Sr) enrichment and depletion of some particular HFSE (e.g. Nb, Ti) indicate low degree of partial melting. Mineral chemistry of biotite and hornblende in the granites reflects crystallization from hydrous calc-alkaline arc-derived magmas possibly formed by subduction. Amphibole-plagioclase thermometry and Al-in-hornblende barometry indicate that the Late Permian hornblende granite and the Triassic biotite-hornblende granite may have equilibrated at 3.0-5.8 kbar/700-820 °C and 2.0-3.2 kbar/600-750 °C, respectively, in the middle-upper crust (about 10-15 km depth). Zircon U-Pb geochronology of the Carboniferous biotite granite, Late Permian hornblende granite and Triassic biotite-hornblende granite yielded intrusion ages of 314.6-284.9 Ma, 253.4 Ma, and 237.8 Ma, respectively, which implies multiple episodes of arc-magmatism formed by Palaeo-Tethys subduction beneath Indochina Terrane during Late Carboniferous/Early Permian, Late Permian and Middle Triassic.

  19. Interfacial processes in the Pd/a-Ge:H system

    Science.gov (United States)

    Edelman, F.; Cytermann, C.; Brener, R.; Eizenberg, M.; Weil, R.; Beyer, W.

    1993-06-01

    The kinetics of phase transformation has been studied in a two-layer structure of Pd/a-Ge:H after vacuum annealing at temperatures from 180 to 500°C. The a-Ge:H was deposited at 250°C on both c-Si and cleaved NaCl substrates in an RF glow discharge from a GeH 4/H 2 mixture. It was found that, similarly to the Pd/c-Ge and the Pd/a-Ge (e-gun deposited) systems, in the case of 0.15-0.2 μm Pd/0.6-1.0 μm a-Ge:H interfacial germanides formed first through the production of Pd 2Ge (plus a small amount of PdGe), and then PdGe was produced. The growth of both compounds was found to be diffusion-controlled. The nonreacted a-Ge:H layer beneath the germanide overlayer crystallized at 400-500°C. A reverse sequence of germanides formation was revealed in the case of 50 nm Pd/30 nm a-Ge:H, studied by in situ heat treatment in the TEM utilizing non-supported samples. The first germanide detected was PdGe and then, as a result of PdGe and Ge reaction or the PdGe decomposition, Pd 2Ge formed. The temperature dependence of the incubation time before the first ˜ 10 nm PdGe grains formed, followed an Arrhenius curve with an activation energy of 1.45 eV.

  20. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    International Nuclear Information System (INIS)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel; Mondiali, Valeria; Isella, Giovanni; Bollani, Monica

    2014-01-01

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

  1. Shallow acceptors in Ge/GeSi heterostructures with quantum wells in magnetic field

    International Nuclear Information System (INIS)

    Aleshkin, V.Ya.; Antonov, A.V.; Veksler, D.B.; Gavrilenko, V.I.; Erofeeva, I.V.; Ikonnikov, A.V.; Kozlov, D.V.; Spirin, K.E.; Kuznetsov, O.A.

    2005-01-01

    One investigated both theoretically and experimentally into shallow acceptors in Ge/GeSi heterostructures with quantum wells (QW) in a magnetic field. It is shown that alongside with lines of cyclotron resonance in magnetoabsorption spectra one observes transitions from the ground state of acceptor to the excited ones associated with the Landau levels from the first and the second subbands of dimensional quantization, and resonance caused by ionization of A + -centres. To describe impurity transitions in Ge/GeSi heterostructures with QW in a magnetic field and to interpret the experiment results in detail one uses numerical method of calculation based on expansion of wave function of acceptor in terms of basis of wave functions of holes in QW in the absence of magnetic field [ru

  2. Ge interactions on HfO2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO2

    International Nuclear Information System (INIS)

    Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G.

    2006-01-01

    Germanium interactions are studied on HfO 2 surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO 2 . Germanium chemical vapor deposition at 870 K on HfO 2 produces a GeO x adhesion layer, followed by growth of semiconducting Ge 0 . PVD of 0.7 ML Ge (accomplished by thermally cracking GeH 4 over a hot filament) also produces an initial GeO x layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge 0 . Temperature programed desorption experiments of ∼1.0 ML Ge from HfO 2 at 400-1100 K show GeH 4 desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO 2 where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO 2 and SiO 2 allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO 2 surfaces that is demonstrated

  3. Essays on Korean online game communities: A sense of place: Media and motivation in Korea by the Wang-tta effect; Order and chaos in an ethnography of Korean online game communities

    OpenAIRE

    Chee, Florence

    2005-01-01

    Essay 1 : This paper presents an ethnographic analysis of the different ways Korean game players establish community. I look at Korean PC game rooms as "third places,", and peer relations associated with online video gaming activities. A synthesis of the Korean concept "Wang-tta" and application of the TEDA Ethos protocol provides extra insight into the motivations to excel at digital games and one of the strong drivers of such community membership. Essay 2: This paper explores the dichotomy ...

  4. Bi surfactant mediated growth for fabrication of Si/Ge nanostructures and investigation of Si/Ge intermixing by STM

    Energy Technology Data Exchange (ETDEWEB)

    Paul, N.

    2007-10-26

    In the thesis work presented here, we show that Bi is more promising surfactant material than Sb. We demonstrate that by using Bi as a terminating layer on Ge/Si surface, it is possible to distinguish between Si and Ge in Scanning tunnelling microscope (STM). Any attempt to utilize surfactant mediated growth must be preceded by a thorough study of its effect on the the system being investigated. Thus, the third chapter of this thesis deals with an extensive study of the Bi surfactant mediated growth of Ge on Si(111) surface as a function of Ge coverage. The growth is investigated from the single bilayer Ge coverage till the Ge coverage of about 15 BL when the further Ge deposition leads to two-dimensional growth. In the fourth chapter, the unique property of Bi terminating layer on Ge/Si surface to result in an STM height contrast between Si and Ge is explained with possible explanations given for the reason of this apparent height contrast. The controlled fabrication of Ge/Si nanostructures such as nanowires and nanorings is demonstrated. A study on Ge-Si diffusion in the surface layers by a direct method such as STM was impossible previously because of the similar electronic structure of Ge and Si. Since with the Bi terminating surface layer, one is able to distinguish between Ge and Si, the study of intermixing between them is also possible using STM. This method to distinguish between Si and Ge allows one to study intermixing on the nanoscale and to identify the fundamental diffusion processes giving rise to the intermixing. In Chapter 5 we discuss how this could prove useful especially as one could get a local probe over a very narrow Ge-Si interface. A new model is proposed to estimate change in the Ge concentration in the surface layer with time. The values of the activation energies of Ge/Si exchange and Si/Ge exchange are estimated by fitting the experimental data with the model. The Ge/Si intermixing has been studied on a surface having 1 ML Bi ({radical

  5. Tailoring the spin polarization in Ge/SiGe multiple quantum wells

    International Nuclear Information System (INIS)

    Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario; Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni; Trivedi, Dhara; Song, Yang; Li, Pengki; Dery, Hanan

    2013-01-01

    We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization

  6. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    International Nuclear Information System (INIS)

    Cecchi, S.; Chrastina, D.; Frigerio, J.; Isella, G.; Gatti, E.; Guzzi, M.; Müller Gubler, E.; Paul, D. J.

    2014-01-01

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 μm thick Si 1−x Ge x buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 °C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si 1−x Ge x layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach

  7. Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

    Science.gov (United States)

    Fernando, Nalin S.; Nunley, T. Nathan; Ghosh, Ayana; Nelson, Cayla M.; Cooke, Jacqueline A.; Medina, Amber A.; Zollner, Stefan; Xu, Chi; Menendez, Jose; Kouvetakis, John

    2017-11-01

    Epitaxial Ge layers on a Si substrate experience a tensile biaxial stress due to the difference between the thermal expansion coefficients of the Ge epilayer and the Si substrate, which can be measured using asymmetric X-ray diffraction reciprocal space maps. This stress depends on temperature and affects the band structure, interband critical points, and optical spectra. This manuscripts reports careful measurements of the temperature dependence of the dielectric function and the interband critical point parameters of bulk Ge and Ge epilayers on Si using spectroscopic ellipsometry from 80 to 780 K and from 0.8 to 6.5 eV. The authors find a temperature-dependent redshift of the E1 and E1 + Δ1 critical points in Ge on Si (relative to bulk Ge). This redshift can be described well with a model based on thermal expansion coefficients, continuum elasticity theory, and the deformation potential theory for interband transitions. The interband transitions leading to E0‧ and E2 critical points have lower symmetry and therefore are not affected by the stress.

  8. A mathematical view for ordinary differential equation models. Comment on ;Epigenetic game theory: How to compute the epigenetic control of maternal-to-zygotic transition; by Qian Wang et al.

    Science.gov (United States)

    Fu, Guifang

    2017-03-01

    Qian Wang et al. have written an interesting article to propose a modeling framework named epiGame in this issue of Physics of Life Reviews [1]. The epiGame framework models how the methylation state of paternal and maternal genomes regulates the embryogenesis as an ecological system in which two highly distinct and specialized gametes coordinate through either cooperation or competition, or both, to maximize the fitness of embryos. Qian Wang et al. also provide solid simulation studies and real data analysis to validate the correctness of their epiGame framework. The importance of embryo development and fertility mechanism cannot be overemphasized, hence, I think that the present review by Qian Wang et al. will stand as a useful modeling guide for practicing biologists or researchers in fertility health to quantify how sperms and oocytes interact through epigenetic process to determine embryo development. In addition, it will serve as a source of many important references to work in the reproductive biology field.

  9. Analysis of neutron spectra and fluxes obtained with cold and thermal moderators at IBR-2 reactor: experimental and computer modeling studies at small-angle scattering YuMO setup

    International Nuclear Information System (INIS)

    Kuklin, A.I.; Rogov, A.D.; Gorshkova, Yu.E.; Kovalev, Yu.S.; Kutuzov, S.A.; Utrobin, P.K.; Rogachev, A.V.; Ivan'kov, O.I.; Solov'ev, D.V.; Gordelij, V.I.

    2011-01-01

    Results of experimental and computer modeling investigations of neutron spectra and fluxes obtained with cold and thermal moderators at the IBR-2 reactor (JINR, Dubna) are presented. The studies are done for small-angle neutron scattering (SANS) spectrometer YuMO (beamline number 4 of the IBR-2). The measurements of neutron spectra for two methane cold moderators are done for the standard configuration of the SANS instrument. The data from both moderators under different conditions of their operation are compared. The ratio of experimentally determined neutron fluxes of cold and thermal moderators at different wavelength is shown. Monte Carlo simulations are done to determine spectra for cold methane and thermal moderators. The results of the calculations of the ratio of neutron fluxes of cold and thermal moderators at different wavelength are demonstrated. In addition, the absorption of neutrons in the air gaps on the way from the moderator to the investigated sample is presented. SANS with the protein apoferritin was done in the case of cold methane as well as a thermal moderator and the data were compared. The perspectives for the use of the cold moderator for a SANS spectrometer at the IBR-2 are discussed. The advantages of the YuMO spectrometer with the thermal moderator with respect to the tested cold moderator are shown

  10. Molecular diversity analysis of Tetradium ruticarpum (WuZhuYu) in China based on inter-primer binding site (iPBS) markers and inter-simple sequence repeat (ISSR) markers.

    Science.gov (United States)

    Xu, Jing-Yuan; Zhu, Yan; Yi, Ze; Wu, Gang; Xie, Guo-Yong; Qin, Min-Jian

    2018-01-01

    "Wu zhu yu", which is obtained from the dried unripe fruits of Tetradium ruticarpum (A. Jussieu) T. G. Hartley, has been used as a traditional Chinese medicine for treatment of headaches, abdominal colic, and hypertension for thousands of years. The present study was designed to assess the molecular genetic diversity among 25 collected accessions of T. ruticarpum (Wu zhu yu in Chinese) from different areas of China, based on inter-primer binding site (iPBS) markers and inter-simple sequence repeat (ISSR) markers. Thirteen ISSR primers generated 151 amplification bands, of which 130 were polymorphic. Out of 165 bands that were amplified using 10 iPBS primers, 152 were polymorphic. The iPBS markers displayed a higher proportion of polymorphic loci (PPL = 92.5%) than the ISSR markers (PPL = 84.9%). The results showed that T. ruticarpum possessed high loci polymorphism and genetic differentiation occurred in this plant. The combined data of iPBS and ISSR markers scored on 25 accessions produced five clusters that approximately matched the geographic distribution of the species. The results indicated that both iPBS and ISSR markers were reliable and effective tools for analyzing the genetic diversity in T. ruticarpum. Copyright © 2018 China Pharmaceutical University. Published by Elsevier B.V. All rights reserved.

  11. Addition of Mn to Ge quantum dot surfaces—interaction with the Ge QD {105} facet and the Ge(001) wetting layer

    International Nuclear Information System (INIS)

    Nolph, C A; Kassim, J K; Floro, J A; Reinke, P

    2013-01-01

    The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T 5 Ge 3 from a mass balance analysis. This reaction is accompanied by the disappearance of the original Mn-surface structures and de-wetting of Mn is complete. This study unravels the details of Mn–Ge interactions, and demonstrates the role of surface diffusion as a determinant in the growth of Mn-doped Ge materials. Surface doping of Ge-nanostructures at lower temperatures could provide a pathway to control magnetism in the Mn–Ge system. (paper)

  12. High-pressure structural behavior of nanocrystalline Ge

    DEFF Research Database (Denmark)

    Wang, H.; Liu, J. F.; Yan, H.

    2007-01-01

    The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transi...

  13. Giant magnetocaloric effect in isostructural MnNiGe-CoNiGe system by establishing a Curie-temperature window

    KAUST Repository

    Liu, E. K.; Zhang, H. G.; Xu, G. Z.; Zhang, X. M.; Ma, R. S.; Wang, W. H.; Chen, J. L.; Zhang, H. W.; Wu, G. H.; Feng, L.; Zhang, Xixiang

    2013-01-01

    An effective scheme of isostructural alloying was applied to establish a Curie-temperature window in isostructural MnNiGe-CoNiGe system. With the simultaneous accomplishment of decreasing structural-transition temperature and converting

  14. Fabrication of Ge-on-insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers

    Science.gov (United States)

    Kim, Munho; Cho, Sang June; Jayeshbhai Dave, Yash; Mi, Hongyi; Mikael, Solomon; Seo, Jung-Hun; Yoon, Jung U.; Ma, Zhenqiang

    2018-01-01

    Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward electronic and optoelectronic devices. Among various fabrication techniques, the Smart-CutTM technique is more attractive than other methods because a high temperature annealing process can be avoided. Another advantage of Smart-CutTM is the reusability of the donor Ge wafer. However, it is very difficult to realize an undamaged Ge wafer because there exists a large mismatch in the coefficient of thermal expansion among the layers. Although an undamaged donor Ge wafer is a prerequisite for its reuse, research related to this issue has not yet been reported. Here we report the fabrication of 4-inch GeOI substrates using the direct wafer bonding and Smart-CutTM process with a low thermal budget. In addition, a thermo-mechanical simulation of GeOI was performed by COMSOL to analyze induced thermal stress in each layer of GeOI. Crack-free donor Ge wafers were obtained by annealing at 250 °C for 10 h. Raman spectroscopy and x-ray diffraction (XRD) indicated similarly favorable crystalline quality of the Ge layer in GeOI compared to that of bulk Ge. In addition, Ge p-n diodes using transferred Ge NM indicate a clear rectifying behavior with an on and off current ratio of 500 at ±1 V. This demonstration offers great promise for high performance transferrable Ge NM-based device applications.

  15. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    Directory of Open Access Journals (Sweden)

    Wei-Ting eLai

    2016-02-01

    Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

  16. Topological phase transition in the two-dimensional anisotropic Heisenberg model: A study using the Replica Exchange Wang-Landau sampling

    Science.gov (United States)

    Figueiredo, T. P.; Rocha, J. C. S.; Costa, B. V.

    2017-12-01

    Although the topological Berezinskii-Kosterlitz-Thouless transition was for the first time described by 40 years ago, it is still a matter of discussion. It has been used to explain several experiments in the most diverse physical systems. In contrast with the ordinary continuous phase transitions the BKT-transition does not break any symmetry. However, in some contexts it can easily be confused with other continuous transitions, in general due to an insufficient data analysis. The two-dimensional XY (or sometimes called planar rotator) spin model is the fruit fly model describing the BKT transition. As demonstrated by Bramwell and Holdsworth (1993) the finite-size effects are more important in two-dimensions than in others due to the logarithmic system size dependence of the properties of the system. Closely related is the anisotropic two dimensional Heisenberg model (AH). Although they have the same Hamiltonian the spin variable in the former has only two degrees of freedom while the AH has three. Many works treat the AH model as undergoing a transition in the same universality class as the XY model. However, its characterization as being in the BKT class of universality deserve some investigation. This paper has two goals. First, we describe an analytical evidence showing that the AH model is in the BKT class of universality. Second, we make an extensive simulation, using the numerical Replica Exchange Wang-Landau method that corroborate our analytical calculations. From our simulation we obtain the BKT transition temperature as TBKT = 0 . 6980(10) by monitoring the susceptibility, the two point correlation function and the helicity modulus. We discuss the misuse of the fourth order Binder's cumulant to locate the transition temperature. The specific heat is shown to have a non-critical behavior as expected in the BKT transition. An analysis of the two point correlation function at low temperature, C(r) ∝r - η(T), shows that the exponent, η, is consistent

  17. Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge

    International Nuclear Information System (INIS)

    Han Le; Zhang Xiong; Wang Sheng-Kai; Xue Bai-Qing; Liu Hong-Gang; Wu Wang-Ran; Zhao Yi

    2014-01-01

    We propose a modified thermal oxidation method in which an Al 2 O 3 capping layer is used as an oxygen blocking layer (OBL) to form an ultrathin GeO x interfacial layer, and obtain a superior Al 2 O 3 /GeO x /Ge gate stack. The GeO x interfacial layer is formed in oxidation reaction by oxygen passing through the Al 2 O 3 OBL, in which the Al 2 O 3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeO x interfacial layer would dramatically decrease as the thickness of Al 2 O 3 OBL increases, which is beneficial to achieving an ultrathin GeO x interfacial layer to satisfy the demand for small equivalent oxide thickness (EOT). In addition, the thickness of the GeO x interfacial layer has little influence on the passivation effect of the Al 2 O 3 /Ge interface. Ge (100) p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) using the Al 2 O 3 /GeO x /Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off (I on /I off ) ratio of above 1×10 4 , a subthreshold slope of ∼ 120 mV/dec, and a peak hole mobility of 265 cm 2 /V·s are achieved. (condensed matter: structural, mechanical, and thermal properties)

  18. Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

    Directory of Open Access Journals (Sweden)

    Hung-Pin Hsu

    2013-01-01

    Full Text Available We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW structure on Ge-on-Si virtual substrate (VS grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.

  19. Electronic structure of Ge-2 and Ge-2 and thermodynamic properties of Ge-2 from all electron ab initio investigations and Knudsen effusion mass spectroscopic measurements

    DEFF Research Database (Denmark)

    Shim, Irene; Baba, M. Sai; Gingerich, K.A.

    2002-01-01

    The low-lying states of the molecule Ge-2 and of the ion Ge-2(-) have been investigated by all electron ab initio multiconfiguration self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) calculations. The relativistic corrections for the Darwin contact term and for t......The low-lying states of the molecule Ge-2 and of the ion Ge-2(-) have been investigated by all electron ab initio multiconfiguration self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) calculations. The relativistic corrections for the Darwin contact term...... excited states are presented. Thermal functions based on the theoretically determined molecular parameters were used to derive the thermodynamic properties of the Ge-2 molecule from new mass spectrometric equilibrium data. The literature value for the dissociation energy of Ge-2 has been re...

  20. Solute trapping of Ge in Al

    International Nuclear Information System (INIS)

    Smith, P.M.; West, J.A.; Aziz, M.J.

    1992-01-01

    This paper reports on partitioning during rapid solidification of dilute Al-Ge alloys. Implanted thin films of Al have been pulsed-laser melted to obtain solidification at velocities in the range of 0.01 ms to 3.3 m/s, as measured by the transient conductance technique. Previous and subsequent Rutherford Backscattering depth profiling of the Ge solute in the Al alloys has been used to determine the nonequilibrium partition coefficient k. A significant degree of lateral film growth during solidification confines determination of k to the placing of an upper bound of 0.22 on k for solidification velocities in this range. The authors place a lower limit of 10 m/s on the diffusive velocity, which locates the transition from solute partitioning to solute trapping in the Continuous Growth Model

  1. The 400 GeV proton synchrotron

    International Nuclear Information System (INIS)

    1976-05-01

    A general account is given of the 400-GeV proton synchrotron, known as Super Proton Synchrotron (SPS), of the European Organization for Nuclear Research (CERN) at Geneva. A brief chapter on the history of the project covers the steps leading to the earlier plan for a 300-GeV accelerator at a new CERN laboratory elsewhere in Europe, abandoned in 1971 in favour of the present machine, and the progress of construction of the latter. The general features of the SPS design are outlined, illustrated by an aerial view of the CERN site, a plan of the SPS, and interior views of the SPS ring tunnel and main control room. (WSN)

  2. Europe at 400 GeV

    International Nuclear Information System (INIS)

    Walgate, R.

    1977-01-01

    The inaugural opening of the 400 GeV proton accelerator at CERN took place on 7 May 1977. A review of difficulties encountered during the 14 years since the SPS was first proposed is given and experiments already underway are outlined. The advantages of this facility over Fermilab and the type of experiment which can now be undertaken to answer some of the questions left open by Fermilab are discussed. (U.K.)

  3. GRETEL, Ge(Li) Gamma Spectra Unfolding

    International Nuclear Information System (INIS)

    1975-01-01

    1 - Nature of physical problem solved: The program performs the quantitative analysis of gamma-ray spectra obtained by Ge(Li) detectors, using special libraries which are prepared for each particular problem. 2 - Method of solution: The computer routines which detect and evaluate peak areas perform the following operations: - local smoothing of the spectrum; - first derivative of the smoothed spectrum, - peak location according to the change of sign of the first derivative; - computation of the net area of each peak found

  4. Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

    OpenAIRE

    Hsu, Hung-Pin; Yang, Pong-Hong; Huang, Jeng-Kuang; Wu, Po-Hung; Huang, Ying-Sheng; Li, Cheng; Huang, Shi-Hao; Tiong, Kwong-Kau

    2013-01-01

    We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spec...

  5. Strain relaxation of germanium-tin (GeSn) fins

    Science.gov (United States)

    Kang, Yuye; Huang, Yi-Chiau; Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Lei, Dian; Masudy-Panah, Saeid; Dong, Yuan; Wu, Ying; Xu, Shengqiang; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia

    2018-02-01

    Strain relaxation of biaxially strained Ge1-xSnx layer when it is patterned into Ge1-xSnx fin structures is studied. Ge1-xSnx-on-insulator (GeSnOI) substrate was realized using a direct wafer bonding (DWB) technique and Ge1-xSnx fin structures were formed by electron beam lithography (EBL) patterning and dry etching. The strain in the Ge1-xSnx fins having fin widths (WFin) ranging from 1 μm down to 80 nm was characterized using micro-Raman spectroscopy. Raman measurements show that the strain relaxation increases with decreasing WFin. Finite element (FE) simulation shows that the strain component in the transverse direction relaxes with decreasing WFin, while the strain component along the fin direction remains unchanged. For various Ge1-xSnx fin widths, transverse strain relaxation was further extracted using micro-Raman spectroscopy, which is consistent with the simulation results.

  6. High spin states in 66,68Ge

    International Nuclear Information System (INIS)

    Hermkens, U.; Becker, F.; Eberth, J.; Freund, S.; Mylaeus, T.; Skoda, S.; Teichert, W.; Werth, A. v.d.

    1992-01-01

    High spin states of 66,68 Ge have been investigated at the FN Tandem accelerator of the University of Koeln via the reactions 40 Ca( 32 S,α2p,4p) 66,68 Ge at a beam energy of 100 MeV and 58 Ni( 16 O,α2p) 68 Ge at 65 MeV. The OSIRIS spectrometer with 12 escape suppressed Ge detectors was used to measure γγ coincidences and γ-ray angular distributions. In 66 Ge ( 68 Ge) 33 (22) new levels were found and 63 (62) new γ-transitions were placed in the level scheme. Both nuclei show a rather complicated but similar excitation pattern, ruled by the interplay of quasiparticle and collective degrees of freedom. The results are compared to the recently published EXVAM calculations for 68 Ge. (orig.)

  7. Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)

    Energy Technology Data Exchange (ETDEWEB)

    De Schutter, B., E-mail: deschutter.bob@ugent.be; Detavernier, C. [Department of Solid-State Sciences, Ghent University, Krijgslaan 281/S1, 9000 Ghent (Belgium); Van Stiphout, K.; Santos, N. M.; Vantomme, A. [Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium); Bladt, E.; Bals, S. [Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Jordan-Sweet, J.; Lavoie, C. [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Comrie, C. M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa)

    2016-04-07

    We studied the solid-phase reaction between a thin Ni film and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situ X-ray diffraction and in situ Rutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide with a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. The complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations.

  8. The coarsening process of Ge precipitates in an Al-4 wt.% Ge alloy

    Energy Technology Data Exchange (ETDEWEB)

    Deaf, G.H

    2004-05-01

    In this paper the results of a quantitative transmission electron microscopy (TEM) investigation of the precipitation process of Ge in an Al-4 wt.% Ge alloy are described. Two crystallographic orientation relationships between the irregular germanium precipitate and aluminum matrix were found to be [1 0 0]{sub Ge} || [1 1 0]{sub Al} and [1 1 4]{sub Ge} || [1 0 0]{sub Al}. The irregular germanium precipitates formed on [0 0 1]{sub Al} habit planes. The origin of the irregular shape is due to the existence of a highly anisotropic interfacial energy as well as in an isotropic growth rate along <1 1 0>{sub A1} directions. Particles sizes were determined for variety of isothermal ageing times at 348, 423 and 523 K. The coarsening of the different morphologies of Ge precipitates was found to obey Ostwald ripening kinetics. The TEM results showed that the coarsening of irregular particles was due to the interfacial coalescence between these particles. Nine different morphologies have been distinguished in the form of (i) irregular particles, (ii) spheres, (iii) hexagonal plates, (iv) rods, (v) triangular plates, (vi) laths, (vii) small tetrahedra, (viii) rectangular plates, and (ix) Lamellae shape.

  9. Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gencarelli, F., E-mail: federica.gencarelli@imec.be [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium); Shimura, Y. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Kumar, A. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Vincent, B.; Moussa, A.; Vanhaeren, D.; Richard, O.; Bender, H. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, W. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Caymax, M.; Loo, R. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, M. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium)

    2015-09-01

    In this work, we discuss the characteristics of particular island-type features with an amorphous core that are developed during the low temperature epitaxial growth of Ge and GeSn layers by means of chemical vapor deposition with Ge{sub 2}H{sub 6}. Although further investigations are needed to unambiguously identify the origin of these features, we suggest that they are originated by the formation of clusters of H and/or contaminants atoms during growth. These would initially cause the formation of pits with crystalline rough facets over them, resulting in ring-shaped islands. Then, when an excess surface energy is overcome, an amorphous phase would nucleate inside the pits and fill them. Reducing the pressure and/or increasing the growth temperature can be effective ways to prevent the formation of these features, likely due to a reduction of the surface passivation from H and/or contaminant atoms. - Highlights: • Island features with amorphous cores develop during low T Ge(Sn) CVD with Ge{sub 2}H{sub 6.} • These features are thoroughly characterized in order to understand their origin. • A model is proposed to describe the possible evolution of these features. • Lower pressures and/or higher temperatures avoid the formation of these features.

  10. Theoretical scenarios for 103 GeV to 1019 GeV

    International Nuclear Information System (INIS)

    Kaul, R.K.

    1996-01-01

    Basic dogmas of particle physics are reviewed. Some of their implications beyond the standard model are explored. Higgs sector of the standard model of electroweak interactions is the weakest link in the model. Elementary Higgs field makes the model unnatural beyond about 10 3 GeV. Supersymmetry provides the most attractive framework where in this problem can be addressed. This new symmetry, relating fermions and bosons, is expected to be operative at about 10 3 GeV. In addition, grand unification of the fundamental interactions can be studied consistently only within a supersymmetric formulation. Inclusion of gravity with other interactions leads to supergravity theories, which should emerge as a low energy description of a more fundamental theory, the string-theory. Supersymmetry again is an essential feature of such a theory. Quantum gravity, with its characteristic scale of 10 19 GeV, may well be described by a superstring theory. (author). 28 refs., 1 fig

  11. Electron-electron interaction in p-SiGe/Ge quantum wells

    International Nuclear Information System (INIS)

    Roessner, Benjamin; Kaenel, Hans von; Chrastina, Daniel; Isella, Giovanni; Batlogg, Bertram

    2005-01-01

    The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9 x 10 11 cm -2 . At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000 cm 2 /Vs), we observe the clear signatures of electron-electron interaction. We compare our experiment with the theory of electron-electron interaction including the Zeeman band splitting. The observed magnetoresistance is well explained as a superposition of band structure induced positive magnetoresistance and the negative magntoresistance due to the electron-electron interaction effect

  12. Background components of Ge(Li) and GeHP-detectors in the passive shield

    International Nuclear Information System (INIS)

    Buraeva, E.A.; Davydov, M.G.; Zorina, L.V.; Stasov, V.V.

    2007-01-01

    The gamma-spectrometer Ge(Li)- and the extra pure Ge-detector background components in a specially designed passive shield were subjected to investigation in the land-based laboratory in 1996-2006. The measurement time period varied from 45 up to 240 hours. The detector background is caused by the radionuclides in the shield material, in the shield cells and in the detector materials. The prominence was given to the study of the revealed time dependence of 222 Rn daughter product background including '2 10 Pb 46.5 keV peak [ru

  13. Effect of Ge surface termination on oxidation behavior

    Science.gov (United States)

    Lee, Younghwan; Park, Kibyung; Cho, Yong Soo; Lim, Sangwoo

    2008-09-01

    Sulfur-termination was formed on the Ge(1 0 0) surface using (NH 4) 2S solution. Formation of Ge-S and the oxidation of the S-terminated Ge surface were monitored with multiple internal reflection Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. In the 0.5, 5, or 20% (NH 4) 2S solution, H-termination on the Ge(1 0 0) surface was substituted with S-termination in 1 min. When the S-terminated Ge(1 0 0) surface was exposed in air ambient, the oxidation was retarded for about 3600 min. The preservation time of the oxide layer up to one monolayer of S-terminated Ge(1 0 0) surface was about 120 times longer than for the H-terminated Ge(1 0 0) surface. However, the oxidation of S-terminated Ge(1 0 0) surface drastically increased after the threshold time. There was no significant difference in threshold time between S-terminations formed in 0.5, 5, and 20% (NH 4) 2S solutions. With the surface oxidation, desorption of S on the Ge surface was observed. The desorption behavior of sulfur on the S-terminated Ge(1 0 0) surface was independent of the concentration of the (NH 4) 2S solution that forms S-termination. Non-ideal S-termination on Ge surfaces may be related to drastic oxidation of the Ge surface. Finally, with the desulfurization on the S-terminated Ge(1 0 0) surface, oxide growth is accelerated.

  14. XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

    International Nuclear Information System (INIS)

    Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

    2005-01-01

    Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments

  15. Shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowires

    Science.gov (United States)

    Wen, Feng; Dillen, David C.; Kim, Kyounghwan; Tutuc, Emanuel

    2017-06-01

    We investigate the shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowire heterostructures grown using a combination of a vapor-liquid-solid (VLS) growth mechanism for the core, followed by in-situ epitaxial shell growth using ultra-high vacuum chemical vapor deposition. Cross-sectional transmission electron microscopy reveals that the VLS growth yields cylindrical Ge, and Si nanowire cores grown along the ⟨111⟩, and ⟨110⟩ or ⟨112⟩ directions, respectively. A hexagonal cross-sectional morphology is observed for Ge-SixGe1-x core-shell nanowires terminated by six {112} facets. Two distinct morphologies are observed for Si-SixGe1-x core-shell nanowires that are either terminated by four {111} and two {100} planes associated with the ⟨110⟩ growth direction or four {113} and two {111} planes associated with the ⟨112⟩ growth direction. We show that the Raman spectra of Si- SixGe1-x are correlated with the shell morphology thanks to epitaxial growth-induced strain, with the core Si-Si mode showing a larger red shift in ⟨112⟩ core-shell nanowires compared to their ⟨110⟩ counterparts. We compare the Si-Si Raman mode value with calculations based on a continuum elasticity model coupled with the lattice dynamic theory.

  16. Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

    Directory of Open Access Journals (Sweden)

    Guangyang Lin

    2016-09-01

    Full Text Available Direct band electroluminescence (EL from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs on a Ge virtual substrate (VS at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L and injection current density (J with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH valance band at higher temperatures.

  17. Epigenetic information in gametes: Gaming from before fertilization. Comment on ;Epigenetic game theory: How to compute the epigenetic control of maternal-to-zygotic transition; by Qian Wang et al.

    Science.gov (United States)

    Shi, Junchao; Zhang, Xudong; Liu, Ying; Chen, Qi

    2017-03-01

    In their interesting article [1] Wang et al. proposed a mathematical model based on evolutionary game theory [2] to tackle the fundamental question in embryo development, that how sperm and egg interact with each other, through epigenetic processes, to form a zygote and direct successful embryo development. This work is based on the premise that epigenetic reprogramming (referring to the erasure and reconstruction of epigenetic marks, such as DNA methylation and histone modifications) after fertilization might be of paramount importance to maintain the normal development of embryos, a premise we fully agree, given the compelling experimental evidence reported [3]. Wang et al. have specifically chosen to employ the well-studied DNA methylation reprogramming process during mammalian early embryo development, as a basis to develop their mathematical model, namely epigenetic game theory (epiGame). They concluded that the DNA methylation pattern in mammalian early embryo could be formulated and quantified, and their model can be further used to quantify the interactions, such as competition and/or cooperation of expressed genes that maximize the fitness of embryos. The efforts by Wang et al. in quantitatively and systematically analyzing the beginning of life apparently hold value and represent a novel direction for future embryo development research from both theoretical and experimental biologists. On the other hand, we see their theory still at its infancy, because there are plenty more parameters to consider and there are spaces for debates, such as the cases of haploid embryo development [4]. Here, we briefly comment on the dynamic process of epigenetic reprogramming that goes beyond DNA methylation, a dynamic interplay that involves histone modifications, non-coding RNAs, transposable elements et al., as well as the potential input of the various types of 'hereditary' epigenetic information in the gametes - a game that has started before the fertilization.

  18. Structure of Ag, Fe and Ge microclusters

    International Nuclear Information System (INIS)

    Montano, P.A.; Shenoy, G.K.; Schulze, W.

    1989-01-01

    The structures of Ag, Fe and Ge microclusters were determined using EXAFS. The measurements were performed over a wide range of clusters sizes. The clusters were prepared using the gas aggregation technique and isolated in solid argon at 4.2 K. The measurements were performed at the National Synchrotron Light Source (NSLS) at beam line X-18B. A strong contraction of the interatomic distances was observed for Ag dimers and multimers. Silver clusters larger than 12 A mean diameter show a small contraction of the nn distance and a structure consistent with an fcc lattice. By contrast clusters smaller than 12 A show the presence of a small expansion and a strong reduction or absence of nnn in the EXAFS signal. This points towards a different crystallographic structure for Ag microclusters with diameter less than 12 A. In iron clusters we observe a gradual reduction of the nn distance as the cluster size decreases. The interatomic distance for iron dimers was determined to be 1.94 A, in good agreement with earlier measurements. The iron microclusters show a bcc structure down to a mean diameter of 9 A. Iron clusters with 9 A mean diameter show a structure inconsistent with a bcc lattice. The new structure is consistent with an fcc or hcp lattice. The measurements on Ge clusters show the presence of only nearest neighbors. There was clear evidence of temporal annealing as determined by variations in the near edge structure of the K-absorption edge. Absorption edge measurements were also performed for free Ge clusters travelling perpendicular to the direction of the synchrotron radiation beam. The measurements performed on the free clusters were consistent with those obtained for matrix isolated clusters. (orig.)

  19. HPC4Energy Final Report : GE Energy

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Steven G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Van Zandt, Devin T. [GE Energy Consulting, Schenectady, NY (United States); Thomas, Brian [GE Energy Consulting, Schenectady, NY (United States); Mahmood, Sajjad [GE Energy Consulting, Schenectady, NY (United States); Woodward, Carol S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2014-02-25

    Power System planning tools are being used today to simulate systems that are far larger and more complex than just a few years ago. Advances in renewable technologies and more pervasive control technology are driving planning engineers to analyze an increasing number of scenarios and system models with much more detailed network representations. Although the speed of individual CPU’s has increased roughly according to Moore’s Law, the requirements for advanced models, increased system sizes, and larger sensitivities have outstripped CPU performance. This computational dilemma has reached a critical point and the industry needs to develop the technology to accurately model the power system of the future. The hpc4energy incubator program provided a unique opportunity to leverage the HPC resources available to LLNL and the power systems domain expertise of GE Energy to enhance the GE Concorda PSLF software. Well over 500 users worldwide, including all of the major California electric utilities, rely on Concorda PSLF software for their power flow and dynamics. This pilot project demonstrated that the GE Concorda PSLF software can perform contingency analysis in a massively parallel environment to significantly reduce the time to results. An analysis with 4,127 contingencies that would take 24 days on a single core was reduced to 24 minutes when run on 4,217 cores. A secondary goal of this project was to develop and test modeling techniques that will expand the computational capability of PSLF to efficiently deal with systems sizes greater than 150,000 buses. Toward this goal the matrix reordering implementation time was sped up 9.5 times by optimizing the code and introducing threading.

  20. Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

    International Nuclear Information System (INIS)

    Kavetskyy, T.; Shpotyuk, O.; Kaban, I.; Hoyer, W.

    2008-01-01

    Atomic structures of Ge 25 Sb 15 S 60 and Ge 35 Sb 5 S 60 glasses are investigated in the γ-irradiated and annealed after γ-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak (FSDP) is detected at around 1.1 A -1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between γ-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 A are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS 4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS 4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts

  1. Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

    Directory of Open Access Journals (Sweden)

    Bo Zhang

    2014-01-01

    Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

  2. Wozu Open-Access-Transformationsverträge?

    Directory of Open Access Journals (Sweden)

    Angela Holzer

    2017-07-01

    Full Text Available Die Deutsche Forschungsgemeinschaft (DFG hat im Frühjahr 2017 eine Ausschreibung veröffentlicht, um „Open-Access-Transformationsverträge“ zu unterstützen. Anträge können bis Ende 2018 gestellt werden. Dieser Artikel erläutert den Inhalt der Ausschreibung, erklärt die Beweggründe für die Ausschreibung, diskutiert die Vor- und Nachteile dieses Instruments der Open-Access-Transformation und legt dar, inwiefern einzelne Bibliotheken in Deutschland die Transformation befördern können.

  3. High spin spectroscopy of 70Ge

    International Nuclear Information System (INIS)

    Kumar Raju, M.; Sugathan, P.; Seshi Reddy, T.; Thirumala Rao, B.V.; Madhusudhana Rao, P.V.; Muralithar, S.; Singh, R.P.; Bhowmik, R.K.

    2011-01-01

    Structure of nuclei in mass 70 region is of interest due to presence of a variety of complex phenomenon. In these nuclei rapid change of nuclear shape with proton and neutron numbers, spin and excitation energy. Valance nucleons in f-p-g shell configuration will drive the nuclei towards high deformations. Relatively large values of quadrupole deformation are evident in the even-even nuclei in this region. Present study is aimed to explore the high spin structure of the 70 Ge nucleus. A negative parity structure was reported in an earlier study

  4. Using game theory to investigate the epigenetic control mechanisms of embryo development: Comment on: "Epigenetic game theory: How to compute the epigenetic control of maternal-to-zygotic transition" by Qian Wang et al.

    Science.gov (United States)

    Zhang, Le; Zhang, Shaoxiang

    2017-03-01

    A body of research [1-7] has already shown that epigenetic reprogramming plays a critical role in maintaining the normal development of embryos. However, the mechanistic quantitation of the epigenetic interactions between sperms and oocytes and the related impact on embryo development are still not clear [6,7]. In this study, Wang et al., [8] develop a modeling framework that addresses this question by integrating game theory and the latest discoveries of the epigenetic control of embryo development. Copyright © 2017 Elsevier B.V. All rights reserved.

  5. SiGe HBTs Optimization for Wireless Power Amplifier Applications

    Directory of Open Access Journals (Sweden)

    Pierre-Marie Mans

    2010-01-01

    Full Text Available This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile is conducted in order to improve the fT values at high injection levels.

  6. Room-temperature ferromagnetic Cr-doped Ge/GeOx core–shell nanowires

    Science.gov (United States)

    Katkar, Amar S.; Gupta, Shobhnath P.; Motin Seikh, Md; Chen, Lih-Juann; Walke, Pravin S.

    2018-06-01

    The Cr-doped tunable thickness core–shell Ge/GeOx nanowires (NWs) were synthesized and characterized using x-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy and magnetization studies. The shell thickness increases with the increase in synthesis temperature. The presence of metallic Cr and Cr3+ in core–shell structure was confirmed from XPS study. The magnetic property is highly sensitive to the core–shell thickness and intriguing room temperature ferromagnetism is realized only in core–shell NWs. The magnetization decreases with an increase in shell thickness and practically ceases to exist when there is no core. These NWs show remarkably high Curie temperature (TC > 300 K) with the dominating values of its magnetic remanence (MR) and coercivity (HC) compared to germanium dilute magnetic semiconductor nanomaterials. We believe that our finding on these Cr-doped Ge/GeOX core–shell NWs has the potential to be used as a hard magnet for future spintronic devices, owing to their higher characteristic values of ferromagnetic ordering.

  7. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

    Science.gov (United States)

    Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard; Strachan, Alejandro

    2015-05-01

    We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement.

  8. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

    International Nuclear Information System (INIS)

    Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard; Strachan, Alejandro

    2015-01-01

    We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement

  9. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

    Energy Technology Data Exchange (ETDEWEB)

    Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Strachan, Alejandro, E-mail: strachan@purdue.edu [School of Materials Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)

    2015-05-07

    We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement.

  10. On the Potential Application of the Wrinkled SiGe/SiGe Nanofilms

    Czech Academy of Sciences Publication Activity Database

    Fedorchenko, Alexander I.; Cheng, H. H.; Wang, W.; Ch.

    2016-01-01

    Roč. 6, č. 2 (2016), s. 19-23 ISSN 2160-049X Institutional support: RVO:61388998 Keywords : wrinkled SiGe nanofilms * terahertz radiation * terahertz gap Subject RIV: BE - Theoretical Physics http://www.scirp.org/journal/wjm,http://dx.doi.org/10.4236/wjm.2016.62003

  11. Sample Scripts for Generating PaGE-OM XML [

    Lifescience Database Archive (English)

    Full Text Available Sample Scripts for Generating PaGE-OM XML This page is offering some sample scripts...on MySQL. Outline chart of procedure 6. Creating RDB tables for Generating PaGE-OM XML These scripts help yo...wnload: create_tables_sql2.zip 7. Generating PaGE-OM XML from phenotype data This sample Perl script helps y

  12. Innovative Ge Quantum Dot Functional Sensing and Metrology Devices

    Science.gov (United States)

    2017-08-21

    Sensing/Metrology Devices Period: May 26th 2015May 25th 2017 Investigators: Pei-Wen Li Affiliation: Department of Electrical Engineering , National...light sources as well as low-power, high-speed Ge photodetectors indeed requires the growth of direct-gap Ge, heterostructure engineering for...All these tasks cannot be simply conducted in terms of bulk Ge technology, and it is no doubt that nanoscience and nanotechnology would offer

  13. Electrical and magnetic transport properties of DyTiGe

    International Nuclear Information System (INIS)

    Dagula, W.; Tegus, O.; Li, X.W.; Zhang, L.; Brueck, E.; Boer, F.R. de; Buschow, K.H.J.

    2004-01-01

    Electrical resistivity and magnetoresistance of DyTiGe were investigated as a function of temperature and magnetic field. DyTiGe is an antiferromagnet with Neel temperature, T N , of 180 K. The electrical resistivity has an anomaly around T N . Below T N , the magnetoresistance of DyTiGe abruptly changes at a critical field. At 5 K, we observe a magnetoresistance reduction of about 20%

  14. New data on excited level scheme of 73Ge nucleus

    International Nuclear Information System (INIS)

    Kosyak, Yu.G.; Kaipov, D.K.; Chekushina, L.V.

    1990-01-01

    New data on the scheme of 73 Ge decay obtained by the method of reactor fast neutron inelastic scattering are presented. γ-Spectra from reaction 73 Ge(n, n'γ) 73 Ge at the angles of 90 and 124 deg of relatively incident neutron beam have been measured. Experimental populations of the levels are studied. 29 new γ-transitions have been identified, two new levels have been introduced

  15. Electrical circuit model of ITO/AZO/Ge photodetector.

    Science.gov (United States)

    Patel, Malkeshkumar; Kim, Joondong

    2017-10-01

    In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO) transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007) (Yun et al., 2016) [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015) [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R-C circuit model using the impedance spectroscopy.

  16. Growth of Ge films by cluster beam deposition

    CERN Document Server

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  17. The first acceleration to 300 GeV

    CERN Multimedia

    CERN PhotoLab

    1976-01-01

    After the acceleration to 80 GeV in May the 200 GeV energy was attained on June 4, followed by a successful attempt to reach 300 GeV and then 400 GeV by the Council session on June 17. Here at the desk (centre) Boris Milman and Bas de Raad, (right) Pat Mills and a machine operator. Then standing on the back Jacques Althaber, Simon Van der Meer, Hans-Peter Kindermann, Raymond Rausch, John Adams, Klaus Batzner, and still back Antonio Millich, Jim Allaby, Wim Middelkoop, Bo Angerth, Hans Horisberger.

  18. Growth and evolution of nickel germanide nanostructures on Ge(001)

    International Nuclear Information System (INIS)

    Grzela, T; Capellini, G; Schubert, M A; Schroeder, T; Koczorowski, W; Czajka, R; Curson, N J; Heidmann, I; Schmidt, Th; Falta, J

    2015-01-01

    Nickel germanide is deemed an excellent material system for low resistance contact formation for future Ge device modules integrated into mainstream, Si-based integrated circuit technologies. In this study, we present a multi-technique experimental study on the formation processes of nickel germanides on Ge(001). We demonstrate that room temperature deposition of ∼1 nm of Ni on Ge(001) is realized in the Volmer–Weber growth mode. Subsequent thermal annealing results first in the formation of a continuous Ni_xGe_y wetting layer featuring well-defined terrace morphology. Upon increasing the annealing temperature to 300 °C, we observed the onset of a de-wetting process, characterized by the appearance of voids on the Ni_xGe_y terraces. Annealing above 300 °C enhances this de-wetting process and the surface evolves gradually towards the formation of well-ordered, rectangular Ni_xGe_y 3D nanostructures. Annealing up to 500 °C induces an Ostwald ripening phenomenon, with smaller nanoislands disappearing and larger ones increasing their size. Subsequent annealing to higher temperatures drives the Ni-germanide diffusion into the bulk and the consequent formation of highly ordered, {111} faceted Ni-Ge nanocrystals featuring an epitaxial relationship with the substrate Ni-Ge (101); (010) || Ge(001); (110). (paper)

  19. Vertical Ge photodetector base on InP taper waveguide

    Science.gov (United States)

    Amiri, Iraj Sadegh; Ariannejad, M. M.; Azzuhri, S. R. B.; Anwar, T.; Kouhdaragh, V.; Yupapin, P.

    2018-06-01

    In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition.

  20. The Au modified Ge(1 1 0) surface

    Science.gov (United States)

    Zhang, L.; Kabanov, N. S.; Bampoulis, P.; Saletsky, A. M.; Zandvliet, H. J. W.; Klavsyuk, A. L.

    2018-05-01

    The pristine Ge(1 1 0) surface is composed of Ge pentagons, which are arranged in relatively large (16 × 2) and c(8 × 10) unit cells. The deposition of sub-monolayer amounts of Au and mild annealing results into de-reconstructed Ge(1 1 0) regions completely free of Ge pentagons and regions composed of nanowires that are aligned along the high symmetry [ 1 1 bar 0 ] direction of the Ge(1 1 0) surface. The de-reconstructed Ge(1 1 0) regions consist of atomic rows that are aligned along the [ 1 1 bar 0 ] direction. A substantial fraction of these substrate rows are straight and resemble the atom rows of the unreconstructed, i.e. bulk terminated, Ge(1 1 0) surface, whereas the other substrate rows have a meandering appearance. These meandering atom rows are comprised of two types of atoms, one type that appears dim, whereas the other type appears bright in filled-state scanning tunneling microscopy images. Using density functional theory calculations, we have tested more than 20 different atomic models for the meandering atom rows. The density functional theory calculations reveal that it is energetically favorable for the deposited Au atoms to exchange position with Ge atoms in the first layer. Based on these findings we conclude that the bright atoms are Ge atoms, whereas the dim atoms are Au atoms.

  1. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Martin Steglich

    2013-07-01

    Full Text Available The growth of Ge on Si(100 by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C, films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  2. Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition.

    Science.gov (United States)

    Gwon, Taehong; Mohamed, Ahmed Yousef; Yoo, Chanyoung; Park, Eui-Sang; Kim, Sanggyun; Yoo, Sijung; Lee, Han-Koo; Cho, Deok-Yong; Hwang, Cheol Seong

    2017-11-29

    The local bonding structures of Ge x Te 1-x (x = 0.5, 0.6, and 0.7) films prepared through atomic layer deposition (ALD) with Ge(N(Si(CH 3 ) 3 ) 2 ) 2 and ((CH 3 ) 3 Si) 2 Te precursors were investigated using Ge K-edge X-ray absorption spectroscopy (XAS). The results of the X-ray absorption fine structure analyses show that for all of the compositions, the as-grown films were amorphous with a tetrahedral Ge coordination of a mixture of Ge-Te and Ge-Ge bonds but without any signature of Ge-GeTe decomposition. The compositional evolution in the valence band electronic structures probed through X-ray photoelectron spectroscopy suggests a substantial chemical influence of additional Ge on the nonstoichiometric GeTe. This implies that the ALD process can stabilize Ge-abundant bonding networks like -Te-Ge-Ge-Te- in amorphous GeTe. Meanwhile, the XAS results on the Ge-rich films that had undergone post-deposition annealing at 350 °C show that the parts of the crystalline Ge-rich GeTe became separated into Ge crystallites and rhombohedral GeTe in accordance with the bulk phase diagram, whereas the disordered GeTe domains still remained, consistent with the observations of transmission electron microscopy and Raman spectroscopy. Therefore, amorphousness in GeTe may be essential for the nonsegregated Ge-rich phases and the low growth temperature of the ALD enables the achievement of the structurally metastable phases.

  3. A 100 GeV SLAC Linac

    International Nuclear Information System (INIS)

    Farkas, Zoltan D

    2002-01-01

    The SLAC beam energy can be increased from the current 50 GeV to 100 GeV, if we change the operating frequency from the present 2856 MHz to 11424 MHz, using technology developed for the NLC. We replace the power distribution system with a proposed NLC distribution system as shown in Fig. 1. The four 3 meter s-band 820 nS fill time accelerator sections are replaced by six 2 meter x-band 120 nS fill time sections. Thus the accelerator length per klystron retains the same length, 12 meters. The 4050 65MW-3.5(micro)S klystrons are replaced by 75MW-1.5(micro)S permanent magnet klystrons developed here and in Japan. The present input to the klystrons would be multiplied by a factor of 4 and possibly amplified. The SLED [1] cavities have to be replaced. The increase in beam voltage is due to the higher elastance to group velocity ratio, higher compression ratio and higher unloaded to external Q ratio of the new SLED cavities. The average power input is reduced because of the narrower klystron pulse width and because the klystron electro-magnets are replaced by permanent magnets

  4. Magnetic phase diagrams of UNiGe

    International Nuclear Information System (INIS)

    Nakotte, H.; Hagmusa, I.H.; Klaasse, J.C.P.; Hagmusa, I.H.; Klaasse, J.C.P.

    1997-01-01

    UNiGe undergoes two magnetic transitions in zero field. Here, the magnetic diagrams of UNiGe for B parallel b and B parallel c are reported. We performed temperatures scans of the magnetization in static magnetic fields up to 19.5T applied along the b and c axes. For both orientations 3 magnetic phases have been identified in the B-T diagrams. We confirmed the previously reported phase boundaries for B parallel c, and in addition we determined the location of the phase boundaries for B parallel b. We discuss a possible relationship of the two zero-field antiferromagnetic phases (commensurate: T<42K; incommensurate: 42K< T<50K) and the field-induced phase, which, at low temperatures, occurs between 18 and 25T or 4 and 10T for B parallel b or B parallel c, respectively. Finally, we discuss the field dependence of the electronic contribution γ to the specific heat for B parallel c up to 17.5T, and we find that its field dependence is similar to the one found in more itinerant uranium compounds

  5. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    International Nuclear Information System (INIS)

    Knowlton, W.B.; Lawrence Berkeley Lab., CA

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 angstrom Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 angstrom, 500 angstrom, and 300 angstrom per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 angstrom/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 angstrom/side appear to correspond with the phonon transmission study

  6. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  7. Ab initio study of the structural, electronic, elastic and thermal properties of RMn{sub 2}Ge{sub 2} (R = Ca, Nd and Y) intermetallic compounds

    Energy Technology Data Exchange (ETDEWEB)

    Miloud Abid, O.; Yakoubi, A. [Laboratoire d’Etudes des Matériaux et Instrumentations Expérimentales, Université Djilali Liabes de Sidi Bel-Abbes, 22000 (Algeria); Tadjer, A. [Modeling and Simulation in Materials Science Laboratory, Physics Department, University of Sidi Bel-Abbes, Sidi Bel-Abbes (Algeria); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique de la Modélisation Mathématique (LPQ3M), Université de Mascara, 29000 (Algeria); Ahmed, R. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Murtaza, G. [Materials Modeling Laboratory, Department of Physics, Islamia College University, Peshawar (Pakistan); Bin Omran, S. [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Azam, Sikander [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic)

    2014-12-15

    Highlights: • The calculated structural parameters of RMn{sub 2}Ge{sub 2} (R = Ca, Nd and Y) compounds are found in good agreement with the experimental data. • The structural and band structure calculation reveals that these compounds are ferromagnetic brittle metals. • The elastic and thermodynamic properties for the herein studied compounds are investigated for the first time. - Abstract: Intermetallic RMn{sub 2}Ge{sub 2} ternary compounds have attracted considerable attention from researchers in recent years because they show strong indications for novel magnetic characteristics and they have the potential to reveal the mechanism of superlattices. The study of the paramagnetic, ferromagnetic and antiferromagnetic phases affirms the strong dependence to the distance between atomic species in these compounds. In this study, we investigated the structural, elastic, electronic and thermodynamic properties of the intermetallic RMn{sub 2}Ge{sub 2} (R = Ca, Nd and Y) compounds. To carry out this study, we used the full potential (FP) linearized (L) augmented plane wave plus local orbitals (APW + lo), a scheme of calculations developed within the frame work of density functional theory (DFT). To incorporate the exchange correlation (XC) energy and corresponding potential into the total energy calculations, local density approximation (LDA) parameterized by Perdew and Wang is taken into account. Analysis of the density of states (DOS) profile illustrates the conducting nature of these intermetallic compounds; with a predominantly contribution from the R and Mn-d states. At ambient conditions, calculations for elastic constants (C{sub 11}, C{sub 12}, C{sub 13}, C{sub 44}, C{sub 33} and C{sub 66}) are also performed, which point to their brittle character. In addition, the quasi harmonic Debye model was used to predict the thermal properties, together with relative expansion coefficients and heat capacity.

  8. Reduction in the formation temperature of Poly-SiGe alloy thin film in Si/Ge system

    Science.gov (United States)

    Tah, Twisha; Singh, Ch. Kishan; Madapu, K. K.; Sarguna, R. M.; Magudapathy, P.; Ilango, S.

    2018-04-01

    The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ˜ 500 °C leading to the formation of a-SiGe. Subsequently, poly-SiGe alloy phase could formonly at temperature ≥ 800 °C. Whereas, for the set of samples deposited at 500 °C, in-situ formation of poly-SiGe alloy thin film could be observed. The energetics of the incoming evaporated atoms and theirsubsequent diffusionsin the presence of the supplied thermal energy is discussed to understand possible reasons for lowering of formation temperature/energyof the poly-SiGe phase.

  9. In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

    DEFF Research Database (Denmark)

    Shimura, Y.; Takeuchi, S.; Nakatsuka, O.

    2012-01-01

    to the introduction of dislocations, due to the increase in the strain of the Ge1-xSnx layers. We achieved the growth of a fully strained Ge0.922Sn0.078 layer on Ge with a Ga concentration of 5.5×1019 /cm3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge1-xSnx layer decreased as the Sn...... content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge1-xSnx epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge0.950Sn0.050 layer annealed at 600°C...

  10. Remote plasma enhanced chemical deposition of non-crystalline GeO2 on Ge and Si substrates.

    Science.gov (United States)

    Lucovsky, Gerald; Zeller, Daniel

    2011-09-01

    Non-crystalline GeO2 films remote were plasma deposited at 300 degrees C onto Ge substrates after a final rinse in NH4OH. The reactant precursors gas were: (i) down-stream injected 2% GeH4 in He as the Ge precursor, and (ii) up-stream, plasma excited O2-He mixtures as the O precursor. Films annealed at 400 degrees C displayed no evidence for loss of O resulting in Ge sub-oxide formation, and for a 5-6 eV mid-gap absorption associated with formation of GeOx suboxide bonding, x deposited on Ge and annealed at 600 degrees C and 700 degrees C display spectra indicative of loss of O-atoms, accompanied with a 5.5 eV absorption. X-ray absorption spectroscopy and many-electron theory are combined to describe symmetries and degeneracies for O-vacancy bonding defects. These include comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers. Three different properties of remote plasma GeO2 films are addressed comparisons between (i) conduction band and band edge states of GeO2 and SiO2, and (ii) electronic structure of O-atom vacancy defects in GeO2 and SiO2, and differences between (iii) annealing of GeO2 films on Ge substrates, and Si substrates passivated with SiON interfacial transition regions important for device applications.

  11. Magnetic and electrical properties of epitaxial GeMn

    Energy Technology Data Exchange (ETDEWEB)

    Ahlers, Stefan

    2009-01-15

    In this work, GeMn magnetic semiconductors will be investigated. The fabrication of GeMn thin films with Mn contents up to 11.7% was realised with molecular beam epitaxy. At a fabrication temperature of 60 C, the suppression of Mn{sub x}Ge{sub y} phases could reproducibly be obtained. Dislocation free epitaxy of diamond-lattice type GeMn thin films was observed. In all fabrication conditions where Mn{sub x}Ge{sub y} suppression was feasible, an inhomogeneous dispersion of Mn was observed in form of a self-assembly of nanometre sized, Mn rich regions in a Ge rich matrix. Each Mn rich region exhibits ferromagnetic coupling with high Curie temperatures exceeding, in part, room temperature. The local ferromagnetic ordering leads to the formation of large, spatially separated magnetic moments, which induce a superparamagnetic behaviour of the GeMn thin films. At low temperatures {<=} 20 K, remanent behaviour was found to emerge. X-ray absorption experiments revealed a similarity of the Mn incorporation in diamond-lattice type GeMn thin films and in the hexagonal lattice of the intermetallic Mn{sub 5}Ge{sub 3} phase, respectively. These tetrahedra represent building blocks of the Mn{sub 5}Ge{sub 3} unit cell. The incorporation of Mn{sub 5}Ge{sub 3} building blocks was found to be accompanied by local structural disorder. The electrical properties of GeMn thin films were addressed by transport measurements. It was shown that by using a n-type Ge substrate, a pn energy barrier between epilayers and substrate to suppress parallel substrate conduction paths can be introduced. With the pn barrier concept, first results on the magnetotransport behaviour of GeMn thin films were obtained. GeMn was found to be p-type, but of high resistivity. a series of GeMn thin films was fabricated, where intermetallic Mn{sub x}Ge{sub y} phase separation was supported in a controlled manner. Phase separation was found to result in the formation of partially coherent, nanometre sized Mn{sub 5

  12. Investigation of electrochemical reduction of GeO2 to Ge in molten CaCl2-NaCl

    International Nuclear Information System (INIS)

    Rong, Liangbin; He, Rui; Wang, Zhiyong; Peng, Junjun; Jin, Xianbo; Chen, George Z.

    2014-01-01

    Electrochemical reduction of solid GeO 2 has been investigated in the mixed CaCl 2 -NaCl melt at 1023 K for developing a more efficient process for preparation of Ge. Cyclic voltammetry and potentiostatic electrolysis were applied to study the GeO 2 -loaded metallic cavity electrode. In addition, porous GeO 2 pellets were reduced by potentiostatic and constant cell voltage electrolysis with a graphite anode, and the electrolysis products were analyzed by powder X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray spectrometry, focusing on understanding the reduction mechanism and the impact of electrode potential on the product purity. It was found that the reduction of GeO 2 to Ge occurred at a potential of about -0.50 V (vs. Ag/Ag + ), but generating various calcium germanates simultaneously, whose reduction was a little more difficult and needed a potential more negative than -1.00 V. However, if the cathode potential exceeded -1.60 V, Ca (or Na) - Ge intermetallic compounds might form. These results gave an appropriate potential range between -1.10 and -1.40 V for the production of pure germanium. Rapid electrolysis of GeO 2 to pure Ge has been realized at a cell voltage of 2.5 V with a current efficiency of about 92%

  13. Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient

    Science.gov (United States)

    Ito, Koichi; Ohta, Akio; Kurosawa, Masashi; Araidai, Masaaki; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2018-06-01

    The growth of a two-dimensional crystal of Ge atoms on an atomically flat Ag(111) surface has been demonstrated by the thermal annealing of a heteroepitaxial Ag/Ge structure in N2 ambient at atmospheric pressure. The surface morphology and chemical bonding features of heteroepitaxial Ag(111) grown on wet-cleaned Ge(111) after annealing at different temperatures and for various times have been systematically investigated to control the surface segregation of Ge atoms and the planarization of the heteroepitaxial Ag(111) surface.

  14. Bulletin of Materials Science | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Properties of ternary NiFeW alloy coating by jet electrodeposition · J K YU J ZHAO M Q YU ... Article ID 43. Effects of static electricity and fabrication parameters on PVDF film properties ..... PING YANG JUN HU YOUCHUN YU BIN WANG ... Studies of thermally assisted interactions of polysulphide polymer with ionic liquids.

  15. Tai An's Famous and Aristocratic Official Families in Korean---New Research on Wang Yiwen Family Adherent to the End of Ming Dynasty%流寓韩国的泰安名臣世家--明末遗民王以文族系新考

    Institute of Scientific and Technical Information of China (English)

    周郢

    2016-01-01

    韩国历史上著名之“九义士”,乃指明清之际随同朝鲜质子入境的九位明朝士人。其中之王以文,传系明臣王楫孙。王楫为明泰安州人,故里即今岱岳区范镇大王庄。范镇王氏所藏道光钞本《王氏族谱》中,不少内容堪与韩国史料相印证。两者在王楫及其先世的记述基本一致,而王楫之后则存在较大差异。入朝王氏系出于泰安范镇王氏家族洵无疑义,但王以文是否为王楫之孙,仍有进一步查证之余地。%The famous "nine righteous men" in Korean history was the nine scholars who had been ac-companying Korean hostage back to Korean at the end of Ming Dynasty. Wang Yiwen, the grandson of Wang Ji, the Ming minister who was from Da Wang Village of Fan County in Tai An. The book Wangs Pedigree of a Clan formed in Dao Guang of Qing Dynasty contained the same contents with Korean historical materials. Wang Ji and his ancestors' documents are generally the same, and his offspring's are different. So it is con-firmed that Wangs in Korea are from Tai An, but Wang Yiwen's origin should give further investigation.

  16. Shell model description of Ge isotopes

    International Nuclear Information System (INIS)

    Hirsch, J G; Srivastava, P C

    2012-01-01

    A shell model study of the low energy region of the spectra in Ge isotopes for 38 ≤ N ≤ 50 is presented, analyzing the excitation energies, quadrupole moments, B(E2) values and occupation numbers. The theoretical results have been compared with the available experimental data. The shell model calculations have been performed employing three different effective interactions and valence spaces. We have used two effective shell model interactions, JUN45 and jj44b, for the valence space f 5/2 pg 9/2 without truncation. To include the proton subshell f 7/2 in valence space we have employed the fpg effective interaction due to Sorlin et al., with 48 Ca as a core and a truncation in the number of excited particles.

  17. 3 GeV Injector Design Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  18. Quantitative Auger analysis of Nb-Ge superconducting alloys

    International Nuclear Information System (INIS)

    Buitrago, R.H.

    1980-01-01

    The feasibility of using Auger electron analysis for quantitative analysis was investigated by studying Nb 3 Ge thin-film Auger data with different approaches. A method base on elemental standards gave consistent quantitative values with reported Nb-Ge data. Alloy sputter yields were also calculated and results were consistent with those for pure elements

  19. 75 FR 21680 - GE-Hitachi Global Laser Enrichment LLC;

    Science.gov (United States)

    2010-04-26

    ... Global Laser Enrichment LLC; Establishment of Atomic Safety and Licensing Board Pursuant to delegation by... over the following proceeding: GE-Hitachi Global Laser Enrichment LLC (GLE Commercial Facility) This... application of GE-Hitachi Global Laser Enrichment LLC for a license to possess and use source, byproduct, and...

  20. Thermoelectric Performance of Na-Doped GeSe

    NARCIS (Netherlands)

    Shaabani, Laaya; Aminorroaya-Yamini, Sima; Byrnes, Jacob; Akbar Nezhad, Ali; Blake, Graeme R

    2017-01-01

    Recently, hole-doped GeSe materials have been predicted to exhibit extraordinary thermoelectric performance owing largely to extremely low thermal conductivity. However, experimental research on the thermoelectric properties of GeSe has received less attention. Here, we have synthesized

  1. Stress evolution of Ge nanocrystals in dielectric matrices

    Science.gov (United States)

    Bahariqushchi, Rahim; Raciti, Rosario; Emre Kasapoğlu, Ahmet; Gür, Emre; Sezen, Meltem; Kalay, Eren; Mirabella, Salvatore; Aydinli, A.

    2018-05-01

    Germanium nanocrystals (Ge NCs) embedded in single and multilayer silicon oxide and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor deposition followed by conventional furnace annealing or rapid thermal processing in N2 ambient. Compositions of the films were determined by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy. The formation of NCs under suitable process conditions was observed with high resolution transmission electron microscope micrographs and Raman spectroscopy. Stress measurements were done using Raman shifts of the Ge optical phonon line at 300.7 cm-1. The effect of the embedding matrix and annealing methods on Ge NC formation were investigated. In addition to Ge NCs in single layer samples, the stress on Ge NCs in multilayer samples was also analyzed. Multilayers of Ge NCs in a silicon nitride matrix separated by dielectric buffer layers to control the size and density of NCs were fabricated. Multilayers consisted of SiN y :Ge ultrathin films sandwiched between either SiO2 or Si3N4 by the proper choice of buffer material. We demonstrated that it is possible to tune the stress state of Ge NCs from compressive to tensile, a desirable property for optoelectronic applications. We also observed that there is a correlation between the stress and the crystallization threshold in which the compressive stress enhances the crystallization, while the tensile stress suppresses the process.

  2. In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

    International Nuclear Information System (INIS)

    Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Vincent, B.; Gencarelli, F.; Clarysse, T.; Vandervorst, W.; Caymax, M.; Loo, R.; Jensen, A.; Petersen, D.H.; Zaima, S.

    2012-01-01

    We have investigated the Ga and Sn content dependence of the crystallinity and electrical properties of Ga-doped Ge 1-x Sn x layers that are heteroepitaxially grown on Ge(001) substrates. The doping of Ga to levels as high as the solubility limit of Ga at the growth temperature leads to the introduction of dislocations, due to the increase in the strain of the Ge 1-x Sn x layers. We achieved the growth of a fully strained Ge 0.922 Sn 0.078 layer on Ge with a Ga concentration of 5.5 × 10 19 /cm 3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge 1-x Sn x layer decreased as the Sn content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge 1-x Sn x epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge 0.950 Sn 0.050 layer annealed at 600°C for 1 min is 3.6 times less than that of the Ga-doped Ge/Ge sample. - Highlights: ► Heavy Ga-doping into fully strained GeSn layers without the introduction of dislocations ► The uniform Ga depth profile allowed the introduction of Sn ► The decrease in resistivity with an increase in the activation level of Ga was caused by the introduction of Sn

  3. Optimization of Si–C reaction temperature and Ge thickness in C-mediated Ge dot formation

    Energy Technology Data Exchange (ETDEWEB)

    Satoh, Yuhki, E-mail: yu-ki@ecei.tohoku.ac.jp; Itoh, Yuhki; Kawashima, Tomoyuki; Washio, Katsuyoshi

    2016-03-01

    To form Ge dots on a Si substrate, the effect of thermal reaction temperature of sub-monolayer C with Si (100) was investigated and the deposited Ge thickness was optimized. The samples were prepared by solid-source molecular beam epitaxy with an electron-beam gun for C sublimation and a Knudsen cell for Ge evaporation. C of 0.25 ML was deposited on Si (100) at a substrate temperature of 200 °C, followed by a high-temperature treatment at the reaction temperature (T{sub R}) of 650–1000 °C to create Si–C bonds. Ge equivalent to 2 to 5 nm thick was subsequently deposited at 550 °C. Small and dense dots were obtained for T{sub R} = 750 °C but the dot density decreased and the dot diameter varied widely in the case of lower and higher T{sub R}. A dot density of about 2 × 10{sup 10} cm{sup −2} was achieved for Ge deposition equivalent to 3 to 5 nm thick and a standard deviation of dot diameter was the lowest of 10 nm for 5 nm thick Ge. These results mean that C-mediated Ge dot formation was strongly influenced not only by the c(4 × 4) reconstruction condition through the Si–C reaction but also the relationship between the Ge deposition thickness and the exposed Si (100)-(2 × 1) surface area. - Highlights: • The effect of Si–C reaction temperature on Ge dot formation was investigated. • Small and dense dots were obtained for T{sub R} = 750 °C. • The dot density of about 2 × 10{sup 10} cm{sup −2} was achieved for Ge = 3 to 5 nm. • The standard deviation of dot diameter was the lowest of 10 nm at Ge = 5 nm.

  4. GeNF - Experimental report 2006

    International Nuclear Information System (INIS)

    Pranzas, P.K.; Schreyer, A.; Willumeit, R.

    2007-01-01

    At the Geesthacht Neutron Facility GeNF about 212 experiments were performed in 2006 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 71 contributions in the present annual experimental report for the year 2006. The contributions may contain one or also several combined experiments. During 2006 the GKSS research reactor FRG-1 achieved an operation time of 197 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10 14 thermal neutrons/cm 2 s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at ARES-2, TEX-2, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR, NeRo, POLDI and ROeDI. The thoroughly upgraded residual stress diffractomer ARES-2 went in full operation in spring 2006 as well as the new neutron tomography device at GENRA-3. The installation of modern experiment control hardware and software based on LabView was completed on all designated instruments. In the appendices I and II the experimental reports of REFSANS at FRM II are attached as well as of the GKSS outstation HARWI-II at DESY. Both instruments started full operation in 2006. (orig.)

  5. GeNF - experimental report 2003

    International Nuclear Information System (INIS)

    Schreyer, A.; Vollbrandt, J.; Willumeit, R.

    2004-01-01

    At the Geesthacht Neutron Facility GeNF about 210 experiments were performed in 2003 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guest and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2003. The contributions may contain one or also several combined experiments. During 2003 the GKSS research reactor FRG-1 achieved an operation time of 252 days at the full 5 MW reactor power providing a neutron flux of ca. 1,4 x 10 14 thermal neutrons / cm 2 s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of metal alloys, the analysis of stresses in welds and technical structures at ARES, FSS, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR and ROeDI. The reflectomer TOREMA was thoroughly upgraded to the instrument NeRo and now offers new measurement possibilities. In the appendices the progress of the project REFSANS at FRM-II is reported as well as the experimental activities of the newly installed GKSS outstation HARWI-II at DESY. (orig.)

  6. GeNF - experimental report 2003

    Energy Technology Data Exchange (ETDEWEB)

    Schreyer, A; Vollbrandt, J; Willumeit, R [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. for Materials Research

    2004-07-01

    At the Geesthacht Neutron Facility GeNF about 210 experiments were performed in 2003 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guest and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2003. The contributions may contain one or also several combined experiments. During 2003 the GKSS research reactor FRG-1 achieved an operation time of 252 days at the full 5 MW reactor power providing a neutron flux of ca. 1,4 x 10{sup 14} thermal neutrons / cm{sup 2} s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of metal alloys, the analysis of stresses in welds and technical structures at ARES, FSS, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR and ROeDI. The reflectomer TOREMA was thoroughly upgraded to the instrument NeRo and now offers new measurement possibilities. In the appendices the progress of the project REFSANS at FRM-II is reported as well as the experimental activities of the newly installed GKSS outstation HARWI-II at DESY. (orig.)

  7. GeNF - Experimental report 2006

    Energy Technology Data Exchange (ETDEWEB)

    Pranzas, P K; Schreyer, A; Willumeit, R [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. of Materials Research

    2007-07-01

    At the Geesthacht Neutron Facility GeNF about 212 experiments were performed in 2006 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 71 contributions in the present annual experimental report for the year 2006. The contributions may contain one or also several combined experiments. During 2006 the GKSS research reactor FRG-1 achieved an operation time of 197 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10{sup 14} thermal neutrons/cm{sup 2}s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at ARES-2, TEX-2, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR, NeRo, POLDI and ROeDI. The thoroughly upgraded residual stress diffractomer ARES-2 went in full operation in spring 2006 as well as the new neutron tomography device at GENRA-3. The installation of modern experiment control hardware and software based on LabView was completed on all designated instruments. In the appendices I and II the experimental reports of REFSANS at FRM II are attached as well as of the GKSS outstation HARWI-II at DESY. Both instruments started full operation in 2006. (orig.)

  8. Crystal structure of LaFe5Ge3O15 = LaFe5[GeO4][Ge2O7]O4

    International Nuclear Information System (INIS)

    Genkina, E.A.; Maksimov, B.A.; Mill, B.V.

    1991-01-01

    The authors have determined the structure of a new lanthanum-iron germanate LaFe 5 [GeO 4 ][GeO 4 ][Ge 2 O 7 ]O 4 (a = 18.040(4), b = 17.012(4), c = 7.591(1) angstrom, V = 2330.2(9) angstrom 3 , Z = 8, ρ t = 4.99 g/cm 3 , space ground Cmca, 1976 I hkl ≥ 3 σ(I), R = 4.5%). The compound is interesting because the framework simultaneously contains ortho- and diorthogroups of Ge and because of a classical set of coordination numbers (4,5,6) characteristic of trivalent iron within the composition of one structure. The coordination polyhedron of La has nine vertices

  9. Crystal growth kinetics in undercooled melts of pure Ge, Si and Ge-Si alloys

    Science.gov (United States)

    Herlach, Dieter M.; Simons, Daniel; Pichon, Pierre-Yves

    2018-01-01

    We report on measurements of crystal growth dynamics in semiconducting pure Ge and pure Si melts and in Ge100-xSix (x = 25, 50, 75) alloy melts as a function of undercooling. Electromagnetic levitation techniques are applied to undercool the samples in a containerless way. The growth velocity is measured by the utilization of a high-speed camera technique over an extended range of undercooling. Solidified samples are examined with respect to their microstructure by scanning electron microscopic investigations. We analyse the experimental results of crystal growth kinetics as a function of undercooling within the sharp interface theory developed by Peter Galenko. Transitions of the atomic attachment kinetics are found at large undercoolings, from faceted growth to dendrite growth. This article is part of the theme issue `From atomistic interfaces to dendritic patterns'.

  10. 20 GeV e+ x 400 GeV p: some synchrotron radiation considerations

    International Nuclear Information System (INIS)

    Humphrey, J.W.; Limon, P.J.

    1977-01-01

    The possibility of a 20 GeV electron ring in the 400 x 400 GeV 2 ISABELLE tunnel is considered. The conclusions that can be drawn from these considerations are: (1) much work remains to be done on the implications of synchrotron radiation for insertion design; (2) in the absence of considerations concerning insertion areas with longitudinal polarization, placing the electron ring in the same vertical plane as the electron ring is mildly favored; (3) creating insertions for longitudinally polarized electrons is difficult, and elementary considerations indicate that the synchrotron radiation flux in the insertion region will increase by a factor of approximately 100 and the luminosity may decrease by a factor of approximately 10; and (4) the creation of insertions for longitudinally polarized electrons favors placing the electron ring in the same horizontal plane as the proton ring

  11. Determination of core level line widths in XPS of GeS and GeSe

    International Nuclear Information System (INIS)

    Viljoen, P.E.

    1981-01-01

    Measured X-ray photoelectron spectra are broadened owing to several factors. They can be regarded as the sums of the instrument response functions and the finite source widths. By measuring the response function and deconvoluting the measured peak, the form of the measured peak, the instrument function and the deconvoluted line were determined. The former two seem to have a Gauss and the latter a Lorentz form. The X-ray source is known to have a Lorentz form. A simple method, using the shapes of all these lines, is proposed to determine the line width. Applied to GeS and GeSe lines it gives values that agree quite well with other determinations. Strictly speaking, the method is only applicable to our or other similar spectrometers, but it can be generally applied if the line shapes are known or can be determined [af

  12. Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

    DEFF Research Database (Denmark)

    Vincent, B.; Gencarelli, F.; Bender, H.

    2011-01-01

    In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay...

  13. Water-vapor-enhanced growth of Ge-GeOx core-shell nanowires and Si1-xGexOy nanowires

    International Nuclear Information System (INIS)

    Hsu, T-J; Ko, C-Y; Lin, W-T

    2007-01-01

    The effects of moist Ar on the growth of Ge-GeO x core-shell nanowires (Ge-GeO x NWs) and Si 1-x Ge x O y nanowires (SiGeONWs) on Si substrates without adding a metal catalyst via the carbothermal reduction of GeO 2 powders at 1100 deg. C were studied. No significant nanowires were grown in dry Ar at a flow rate of 100-300 sccm until a bit of water in the range of 0.5-2 ml was loaded into the furnace. More water suppressed the growth of nanowires because of the exhaustion of more graphite powder. The growth of Ge-GeO x NWs and SiGeONWs follows the vapor-solid and vapor-liquid-solid processes, respectively. The present study showed that the water vapor serves as an oxidizer as well as a reducer at 1100 deg. C in enhancing the growth of SiGeONWs and Ge-GeO x NWs, respectively. The growth mechanisms of Ge-GeO x NWs and SiGeONWs are also discussed

  14. Band structure analysis in SiGe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Amato, Michele [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy); Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy); Palummo, Maurizia [European Theoretical Spectroscopy Facility (ETSF) (Italy); CNR-INFM-SMC, Dipartimento di Fisica, Universita di Roma, ' Tor Vergata' , via della Ricerca Scientifica 1, 00133 Roma (Italy); Ossicini, Stefano, E-mail: stefano.ossicini@unimore.it [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy) and Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy) and European Theoretical Spectroscopy Facility - ETSF (Italy) and Centro Interdipartimentale ' En and Tech' , Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy)

    2012-06-05

    One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

  15. Effects of hydrogenation on magnetism of UNiGe

    Energy Technology Data Exchange (ETDEWEB)

    Adamska, A.M., E-mail: anna@mag.mff.cuni.cz [Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 12116 Prague 2 (Czech Republic); Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30 059 Cracow (Poland); Havela, L. [Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 12116 Prague 2 (Czech Republic); Prochazka, J. [Faculty of Sports and Physical Education, Charles University, Jose Martiho 31, 16252, Prague 6 (Czech Republic); Andreev, A.V. [Institute of Physics, Academy of Sciences, Na Slovance 2, 18221 Prague (Czech Republic); Skourski, Y. [Dresden High Magnetic Field Laboratory, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden (Germany)

    2011-12-15

    U-based intermetallic compound UNiGe absorbs hydrogen up to the stoichiometry UNiGeH{sub 1.2}. In analogy to other compounds with the TiNiSi-type of structure, the structure is modified into hexagonal. The zig-zag U-chains are stretched, the U-U spacing is largely enhanced and the ordering temperature increases up to 100 K. The ordered state has a spontaneous moment, but it is unlikely to be a simple ferromagnet. - Highlights: > UNiGe exhibits a variety of magnetic properties. > Hydrogenation modifies the crystal, electronic structure, and the magnetic properties. > Upon hydrogenation, the crystal symmetry of UNiGe increases from orthorhombic to hexagonal. > Magnetic ordering temperature of UNiGe (T{sub N}=44 K) is double in the hydride, possible second phase transition.

  16. Band structure analysis in SiGe nanowires

    International Nuclear Information System (INIS)

    Amato, Michele; Palummo, Maurizia; Ossicini, Stefano

    2012-01-01

    One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

  17. First evidence of low energy enhancement in Ge isotopes

    Directory of Open Access Journals (Sweden)

    Renstrøm T.

    2015-01-01

    Full Text Available The γ-strength functions and level densities of 73,74Ge have been extracted from particle-γ coincidence data using the Oslo method. In addition the γ-strength function of 74Ge above the neutron separation threshold, Sn = 10.196 MeV has been extracted from photoneutron measurements. When combined, these two experiments give a γ-strength function covering the energy range of ∼1-13 MeV for 74Ge. This thorough investigation of 74Ge is a part of an international campaign to study the previously reported low energy enhancement in this mass region in the γ-strength function from ∼3MeV towards lower γ energies. The obtained data show that both 73,74Ge display an increase in strength at low γ energies.

  18. Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

    Science.gov (United States)

    Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

    2015-07-01

    The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

  19. Development of GE90 engine with largest thrust. GE90 engine no kaihatsu jokyo

    Energy Technology Data Exchange (ETDEWEB)

    Aono, H [Ishikawajima-Harima Heavy Industries, Co. Ltd., Tokyo (Japan)

    1994-05-01

    The present paper explained the turbofan engine GE90 which is being developed by General Electric Co., USA. That engine is to meet the thrust (takeoff thrust) of 300 to 530kN as required for the new-generation wide-fuselage civil transport plane which is being designed for its planned operation in the 1990's. In April, 1991, the world's strongest thrust of 480kN was achieved with engine elements also confirmed through element test. Thereafter, the engine underwent a flying test on board of Boeing 747 to materialize the planned operation in 1995. Made to be 9 in by-pass ratio and about 40 in overall pressure ratio, the GE90 was given the concept that advantage could be secured in both propulsive efficiency and thermal efficiency. That concept could be materialized by the development of composite fan blade technology and energy-efficient technology which were both demonstrated with an unducted fan. In spite of its pressure ratio of 22, the GE90's high pressure compressor demonstrates its polytropic efficiency which is equal to that of the low pressure ratio compressor. 3 refs., 19 figs., 1 tab.

  20. Molecular beam epitaxy growth of [CrGe/MnGe/FeGe] superlattices: Toward artificial B20 skyrmion materials with tunable interactions

    Science.gov (United States)

    Ahmed, Adam S.; Esser, Bryan D.; Rowland, James; McComb, David W.; Kawakami, Roland K.

    2017-06-01

    Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(1 1 1) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic.

  1. GeO{sub x} interfacial layer scavenging remotely induced by metal electrode in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Taehoon; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Lee, Sung Bo [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826 (Korea, Republic of); Park, In-Sung, E-mail: parkis77@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 04763 (Korea, Republic of)

    2016-07-11

    The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction of the GeO{sub x} interfacial layer (IL) between HfO{sub 2} dielectric and Ge substrate in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors. All the capacitors were fabricated using the same process except for the material used in the metal electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, and electron energy loss spectroscopy were conducted to confirm the scavenging of GeO{sub x} IL. Interestingly, these metals are observed to remotely scavenge the interfacial layer, reducing its thickness in the order of Ni, W, and then Pt. The capacitance equivalent thickness of these capacitors with Ni, W, and Pt electrodes are evaluated to be 2.7 nm, 3.0 nm, and 3.5 nm, and each final remnant physical thickness of GeO{sub x} IL layer is 1.1 nm 1.4 nm, and 1.9 nm, respectively. It is suggested that the scavenging effect induced by the metal electrodes is related to the concentration of oxygen vacancies generated by oxidation reaction at the metal/HfO{sub 2} interface.

  2. Strain-free Ge/GeSiSn Quantum Cascade Lasers Based on L-Valley Intersubband Transitions

    National Research Council Canada - National Science Library

    Soret, R. A; Sun, G; Cheng, H; Menendez, J; Khurgin, J

    2007-01-01

    The authors propose a Ge/Ge0.76Si0.19Sn0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a clean offset of 150 meV situated below other energy valleys Gamma and X...

  3. Ab-initio calculations of semiconductor MgGeP{sub 2} and MgGeAs{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Kocak, B.; Ciftci, Y.O., E-mail: yasemin@gazi.edu.tr

    2016-05-15

    Highlights: • MgGeP{sub 2} and MgGeAs{sub 2} are semiconductor compounds. • MgGeP{sub 2} and MgGeAs{sub 2} are energetically, mechanically and dynamically stable. • The electronic charge density contour plot shows that the nature of bonding is a mixture of ionic-covalent. - Abstract: In this study, we focus on structural, electronic, elastic, lattice dynamic and optic properties of MgGeP{sub 2} and MgGeAs{sub 2} using ab-initio density-functional theory (DFT) within Armiento-Mattson 2005 (AM05) scheme of the generalized gradient approximation (GGA) for the exchange-correlation potential. Our computed structural results are in reasonable agreement with the literature. The band gap of these compounds is predicted to be direct. Our elastic results prove that these compounds are mechanically stable. The obtained phonon spectra of MgGeP{sub 2} and MgGeAs{sub 2} do not exhibit any significant imaginary branches using GGA-AM05 for the exchange-correlation approximation. Further analysis of the optical response of the dielectric functions, optical reflectivity, refractive index, extinction coefficient and electron energy loss delves into for the energy range of 0–22.5 eV. It motivated that there exists an optical polarization anisotropy of these compounds for optoelectronic device applications.

  4. A New Book on the Law System of the Golden Horde: Pochekaev R.Yu. Legal Culture of the Golden Horde (Historical and Legal Essays (Moscow: Yurlitinform, 2015. 312 p.

    Directory of Open Access Journals (Sweden)

    D.V. Nefedov

    2016-12-01

    Full Text Available This book is a study at the intersection of such academic disciplines as general history, history of state and law and source study. The subcect of R.Yu. Pochevalev’s book appears very relevant since the interest of the scientific community and readership toward the Golden Horde and its role in the history of the Russian state remains traditionally high for several centuries. However, the author is trying to take a fresh look at this state and refute the stereotype of the Golden Horde as a some kind of bunch of nomads who lived only by plundering neighboring sedentary peoples. He succeeds in this by studying such an important part of the Golden Horde history as its law and legal culture. The book examines a number of questions on the history of state and law of the Golden Horde, which have not previously been the subject of a special study (for example, possessions of the Golden Horde in other uluses, dualism of power in different states, relations between authorities and traders, etc.. On some other issues that have already been studied by experts, he proposes new interpretations in the framework of historical and legal approach (for example, the causes of intestine strife in the Golden Horde in the mid-14th century, yarliks of the Golden Horde khans granted to the Russian Chruch, relations of the Golden Horde rulers and Italian colonies in the Northern Black Sea region. The author examines to a great extent the themes of state and legal regulation of economic relations: status of merchants in the Golden Horde and post-Golden Horde states, role of economic sanctions in the resolution of political conflicts. In other essays contained in the book, the author also emphasizes the role of the economic component of the political and legal relations. For example, R.Yu. Pochekaev convincingly shows that relations of the Golden Horde with other states of the Mongol Empire was based on the principle of mutual provision of possessions to the rulers of

  5. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    International Nuclear Information System (INIS)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10 8 photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H 2 atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs

  6. Improving the electrode performance of Ge through Ge@C core-shell nanoparticles and graphene networks.

    Science.gov (United States)

    Xue, Ding-Jiang; Xin, Sen; Yan, Yang; Jiang, Ke-Cheng; Yin, Ya-Xia; Guo, Yu-Guo; Wan, Li-Jun

    2012-02-08

    Germanium is a promising high-capacity anode material for lithium ion batteries, but it usually exhibits poor cycling stability because of its huge volume variation during the lithium uptake and release process. A double protection strategy to improve the electrode performance of Ge through the use of Ge@C core-shell nanostructures and reduced graphene oxide (RGO) networks has been developed. The as-synthesized Ge@C/RGO nanocomposite showed excellent cycling performance and rate capability in comparison with Ge@C nanoparticles when used as an anode material for Li ion batteries, which can be attributed to the electronically conductive and elastic RGO networks in addition to the carbon shells and small particle sizes of Ge. The strategy is simple yet very effective, and because of its versatility, it may be extended to other high-capacity electrode materials with large volume variations and low electrical conductivities.

  7. GeO2/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    Science.gov (United States)

    Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

    2014-10-01

    Deuterium (D) incorporation in GeO2/Ge structures following D2 annealing was investigated. Higher D concentrations were obtained for GeO2/Ge samples in comparison to their SiO2/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D2 constitute defect sites for D incorporation, analogous to defects at the SiO2/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D2 annealing, especially in the high temperature regime of the present study (>450 °C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO2/Si counterparts.

  8. 古今文献中与“尪痹”相关的病证名研究%A Study on the Disorders Relevant with“ Wang Bi”in the Ancient and Modern Literatures

    Institute of Scientific and Technical Information of China (English)

    孟小燕; 王育林

    2016-01-01

    Differentiation of disease and differentiation of syndrome are equally important in the di-agnosis and treatment of TCM. Disease is the entire process of some abnormal life state and syndrome is a cer-tain stage in the abnormal process in the life. The terms of disease and syndrome are related with each other. In the study of the ancient and modern literatures on the term Wang Bi(尪痹),it was found that the term for syndrome was also involved. Wang Bi(尪痹)is the new term of a disease proposed by TCM master,Jiao Shude. By investigating the name and origin of the disease,Wan Bi was identified as the term of syndrome. The connection of Wang Bi(尪痹)and Wan Bi was attempted to build so as to contribute to the correct un-derstanding of the disease and construction of medical history in TCM.%中医诊治强调辨病与辨证并重,中医学探讨某病时兼及“病”“证”。疾病指人体某种异常生命状态的全过程,而证候是这个全部生命异常过程中的某个阶段。病证名即与病、证发生发展相关的称谓。在考察古今文献中与“尪痹”相关称谓时,发现还有证名的存在,因此为客观全面,该文使用了“病证名”而非“病名”的概念。“尪痹”是已故中医学家焦树德提出的新病名,考察古今文献中与“尪痹”相关的称谓,可以发现还有证名的存在。对这些病证的名实与源流进行考察,考证“尪痹”之源,辨析病证名“顽痹”。力图呈现与“尪痹”相关病证名的大致面貌,以利于准确把握这一疾病,俾于中医疾病史的建构。

  9. Thermoelectric cross-plane properties on p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Ferre Llin, L.; Samarelli, A. [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Müller Gubler, E. [ETH, Electron Microscopy ETH Zurich, Wolgang-Pauli-Str. Ch-8093 Zurich (Switzerland); Etzelstorfer, T.; Stangl, J. [Johannes Kepler Universität, Institute of Semiconductor and Solid State Physics, A-4040 Linz (Austria); Paul, D.J., E-mail: Douglas.Paul@glasgow.ac.uk [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2016-03-01

    Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si{sub 0.3}Ge{sub 0.7} superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period. - Highlights: • Growth of epitaxial Ge/SiGe superlattices on Si substrates as energy harvesters • Study of cross-plane thermoelectric properties of Ge/SiGe superlattices at 300 K • Thermoelectric figures of merit studied as a function of doping density • Phonon scattering at different wavelengths to reduce thermal transport.

  10. The Effects of Annealing Temperatures on Composition and Strain in Si x Ge1-x Obtained by Melting Growth of Electrodeposited Ge on Si (100).

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2014-02-24

    The effects of annealing temperatures on composition and strain in Si x Ge 1- x , obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm -1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of Si x Ge 1- x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

  11. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2014-01-01

    The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100°C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~00 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance. PMID:28788521

  12. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100

    Directory of Open Access Journals (Sweden)

    Mastura Shafinaz Zainal Abidin

    2014-02-01

    Full Text Available The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100 substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100 orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

  13. Pulse shape discrimination performance of inverted coaxial Ge detectors

    Science.gov (United States)

    Domula, A.; Hult, M.; Kermaïdic, Y.; Marissens, G.; Schwingenheuer, B.; Wester, T.; Zuber, K.

    2018-05-01

    We report on the characterization of two inverted coaxial Ge detectors in the context of being employed in future 76Ge neutrinoless double beta (0 νββ) decay experiments. It is an advantage that such detectors can be produced with bigger Ge mass as compared to the planar Broad Energy Ge (BEGe) or p-type Point Contact (PPC) detectors that are currently used in the GERDA and MAJORANA DEMONSTRATOR 0 νββ decay experiments respectively. This will result in a lower background for the search of 0 νββ decay due to a reduction of detector surface to volume ratio, cables, electronics and holders which are dominating nearby radioactive sources. The measured resolution near the 76Ge Q-value at 2039 keV is 2.3 keV FWHM and their pulse-shape discrimination of background events are similar to BEGe and PPC detectors. It is concluded that this type of Ge-detector is suitable for usage in 76Ge 0 νββ decay experiments.

  14. Photoluminescence of phosphorus atomic layer doped Ge grown on Si

    Science.gov (United States)

    Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

    2017-10-01

    Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

  15. Monolithically Integrated Ge-on-Si Active Photonics

    Directory of Open Access Journals (Sweden)

    Jifeng Liu

    2014-07-01

    Full Text Available Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well (QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors (PDs, electroabsorption modulators (EAMs, and laser diodes (LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform.

  16. GeNF - Experimental report 2008

    Energy Technology Data Exchange (ETDEWEB)

    Pranzas, Philipp Klaus; Mueller, Martin; Willumeit, Regine; Schreyer, Andreas [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. fuer Materialforschung

    2009-12-11

    At the Geesthacht Neutron Facility GeNF about 182 experiments were performed in 2008 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests, by GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2008. The contributions may contain several combined experiments. During 2008 the GKSS research reactor FRG-1 achieved an operation time of 175 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4.10{sup 14} thermal neutrons/cm{sup 2} s. The focus of the in house R and D work at GeNF instruments in 2008 was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware (e.g. sample environments, like magnets, cryostats or furnaces) and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. The massive activity at the FRM II outstation is documented by the increasing number of REFSANS reports, accumulated to nine. Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at the synchrotron storage ring DORIS III at DESY is accepted very well by the community and is heavily overbooked in all fields (tomography, diffraction, etc.). After an 8-month shutdown period for an upgrade in the frame

  17. GeNF - Experimental report 2008

    International Nuclear Information System (INIS)

    Pranzas, Philipp Klaus; Mueller, Martin; Willumeit, Regine; Schreyer, Andreas

    2009-01-01

    At the Geesthacht Neutron Facility GeNF about 182 experiments were performed in 2008 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests, by GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2008. The contributions may contain several combined experiments. During 2008 the GKSS research reactor FRG-1 achieved an operation time of 175 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4.10 14 thermal neutrons/cm 2 s. The focus of the in house R and D work at GeNF instruments in 2008 was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware (e.g. sample environments, like magnets, cryostats or furnaces) and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. The massive activity at the FRM II outstation is documented by the increasing number of REFSANS reports, accumulated to nine. Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at the synchrotron storage ring DORIS III at DESY is accepted very well by the community and is heavily overbooked in all fields (tomography, diffraction, etc.). After an 8-month shutdown period for an upgrade in the frame of the

  18. GeNF - Experimental report 2007

    Energy Technology Data Exchange (ETDEWEB)

    Pranzas, P K; Schreyer, A; Willumeit, R [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. fuer Materialforschung

    2008-11-05

    At the Geesthacht Neutron Facility GeNF about 203 experiments were performed in 2007 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 70 contributions in the present annual experimental report for the year 2007. The contributions may contain one or also several combined experiments. During 2007 the GKSS research reactor FRG-1 achieved an operation time of 204 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10{sup 14} thermal neutrons/cm{sup 2}s. In May/June 2007 the FRG-1 was upgraded with a new cold neutron source yielding a flux increase at the five instruments using cold neutrons of up to 40 %. The focus of the in house R and D work at GeNF instruments in 2007 was the characterisation of nano-structures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. At the neutron reflectometer REFSANS at FRM II measurements are possible using a broad range of the scattering vector with reflectivities up to 10{sup -7}. Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at DESY is accepted very well by the community and is overbooked in all fields

  19. GeNF - Experimental report 2007

    International Nuclear Information System (INIS)

    Pranzas, P.K.; Schreyer, A.; Willumeit, R.

    2008-01-01

    At the Geesthacht Neutron Facility GeNF about 203 experiments were performed in 2007 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 70 contributions in the present annual experimental report for the year 2007. The contributions may contain one or also several combined experiments. During 2007 the GKSS research reactor FRG-1 achieved an operation time of 204 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10 14 thermal neutrons/cm 2 s. In May/June 2007 the FRG-1 was upgraded with a new cold neutron source yielding a flux increase at the five instruments using cold neutrons of up to 40 %. The focus of the in house R and D work at GeNF instruments in 2007 was the characterisation of nano-structures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. At the neutron reflectometer REFSANS at FRM II measurements are possible using a broad range of the scattering vector with reflectivities up to 10 -7 . Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at DESY is accepted very well by the community and is overbooked in all fields (tomography

  20. Yan Sun, Corruption and Market in Contemporary China, Ithaca (N.Y.), Cornell University Press, 2004 et Ning Wang, Making a Market Economy. The Institutional Transformation of a Freshwater Fishery in a Chinese Community, Londres et New York, Routledge, 200

    OpenAIRE

    Guiheux, Gilles

    2008-01-01

    Ces deux ouvrages éclairent les conditions dans lesquelles, au cours des 25 dernières années, l’économie de commande a été démantelée et remplacée progressivement par un système de marché. Yan Sun, professeur de sciences politiques, s’intéresse à la corruption dans une double perspective macro et micro. Ning Wang, économiste néo-institutionnaliste, se demande comment, à la faveur des réformes, une région (Jingzhou, au sud du Hubei) s’est convertie à la pisciculture. La corruption est une ques...

  1. Efficient tunable luminescence of SiGe alloy sheet polymers

    International Nuclear Information System (INIS)

    Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

    2001-01-01

    Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si 1-x Ge x ) 2 precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. [copyright] 2001 American Institute of Physics

  2. A CoGeNT confirmation of the DAMA signal

    International Nuclear Information System (INIS)

    Foot, R.

    2010-01-01

    The CoGeNT Collaboration has recently reported a rising low energy spectrum in their ultra low noise Germanium detector. This is particularly interesting as the energy range probed by CoGeNT overlaps with the energy region in which DAMA has observed their annual modulation signal. We show that the mirror dark matter candidate can simultaneously explain both the DAMA annual modulation signal and the rising low energy spectrum observed by CoGeNT. This constitutes a model dependent confirmation of the DAMA signal and adds weight to the mirror dark matter paradigm.

  3. Development of high responsivity Ge:Ga photoconductors

    International Nuclear Information System (INIS)

    Haegel, N.M.; Hueschen, M.R.; Haller, E.E.

    1984-06-01

    Czochralski-grown gallium-doped germanium (Ge:Ga) single crystal samples with a compensation of 10 -4 have been modified by the indiffusion of Cu to produce photoconductors which provide NEPs comparable to current optimum Ge:Ga detectors, but exhibit responsivities a factor of 5 to 6 times higher when tested at a background photon flux of 10 8 photons/sec at lambda=93 μm. The introduction of Cu, a triple acceptor in Ge which acts as a neutral scattering center, reduces carrier mobility and extends the breakdown field significantly in this ultra-low compensation material

  4. Spin-polarized photoemission from SiGe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2013-12-04

    We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

  5. Soft chemistry routes to GeS2 nanoparticles

    Science.gov (United States)

    Courthéoux, Laurence; Mathiaud, Romain; Ribes, Michel; Pradel, Annie

    2018-04-01

    Spherical GeS2 particles are prepared by a low temperature liquid route with TEOG as germanium precursor and either H2S or thioacetamide (TAA) as sulfur precursors. The size and agglomeration of the particles change depending upon the temperature and nature of the solvent. Most synthesis lead to preparing amorphous GeS2. When the reaction kinetic is slowed down by using TAA at 25 °C, the obtained GeS2 product presents a larger order in the range of few Å as proven by Raman spectroscopy, even though it is still an amorphous compound as suggested by X-Ray diffraction and TEM experiments.

  6. Gadolinium scandium germanide, Gd2Sc3Ge4

    Directory of Open Access Journals (Sweden)

    Sumohan Misra

    2009-04-01

    Full Text Available Gd2Sc3Ge4 adopts the orthorhombic Pu5Rh4-type structure. The crystal structure contains six sites in the asymmetric unit: two sites are statistically occupied by rare-earth atoms with Gd:Sc ratios of 0.967 (4:0.033 (4 and 0.031 (3:0.969 (3, one site (.m. symmetry is occupied by Sc atoms, and three distinct sites (two of which with .m. symmetry are occupied by Ge atoms. The rare-earth atoms form two-dimensional slabs with Ge atoms occupying the trigonal-prismatic voids.

  7. Muonium hyperfine parameters in Si1-x Ge x alloys

    International Nuclear Information System (INIS)

    King, Philip; Lichti, Roger; Cottrell, Stephen; Yonenaga, Ichiro

    2006-01-01

    We present studies of muonium behaviour in bulk, Czochralski-grown Si 1- x Ge x alloy material, focusing in particular on the hyperfine parameter of the tetrahedral muonium species. In contrast to the bond-centred species, the hyperfine parameter of the tetrahedral-site muonium centre (Mu T ) appears to vary non-linearly with alloy composition. The temperature dependence of the Mu T hyperfine parameter observed in low-Ge alloy material is compared with that seen in pure Si, and previous models of the Mu T behaviour in Si are discussed in the light of results from Si 1- x Ge x alloys

  8. Applications of Si/SiGe heterostructures to CMOS devices

    International Nuclear Information System (INIS)

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  9. High-pressure structural behaviour of nanocrystalline Ge

    International Nuclear Information System (INIS)

    Wang, H; Liu, J F; He, Y; Wang, Y; Chen, W; Jiang, J Z; Olsen, J Staun; Gerward, L

    2007-01-01

    The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transition remains constant. Simplified models for the high-pressure structural behaviour are presented, based on the assumption that a large fraction of the atoms reside in grain boundary regions of the nanocrystalline material. The interface structure plays a significant role in affecting the transition pressure and the bulk modulus

  10. Interaction of slow neutrons with 74Ge single crystals

    International Nuclear Information System (INIS)

    Pshenichnyj, V.A.; Pak En Men; Vorobkalo, F.M.; Vertebnyj, V.P.

    1986-01-01

    The total cross section of monocrystal from germanium-74 isotope by the time-of-flight method in the 0.017-10 eV range is measured. At room temperatures the above monocrystal possesses the capability of separating from the white reactor spectrum intensive beams of thermal neutrons. It is shown that the 74 Ge monocrystal by its filtering properties approaches to the Si monocrystal. The observed cross sections for Si, Ge, 74 Ge monocrystals in the thermal region of neutron energy are indicated in the study

  11. Recent progress in GeSi electro-absorption modulators

    International Nuclear Information System (INIS)

    Chaisakul, Papichaya; Marris-Morini, Delphine; Rouifed, Mohamed-Said; Coudevylle, Jean-René; Roux, Xavier Le; Edmond, Samson; Vivien, Laurent; Frigerio, Jacopo; Chrastina, Daniel; Isella, Giovanni

    2014-01-01

    Electro-absorption from GeSi heterostructures is receiving growing attention as a high performance optical modulator for short distance optical interconnects. Ge incorporation with Si allows strong modulation mechanism using the Franz–Keldysh effect and the quantum-confined Stark effect from bulk and quantum well structures at telecommunication wavelengths. In this review, we discuss the current state of knowledge and the on-going challenges concerning the development of high performance GeSi electro-absorption modulators. We also provide feasible future prospects concerning this research topic. (review)

  12. The metallization of Ge-doped plastics

    International Nuclear Information System (INIS)

    Huser, G.; Recoules, V.; Salin, G.; Galmiche, D.; Ozaki, N.; Miyanishi, K.; Kodama, R.; Sano, T.; Sakawa, Y.

    2013-01-01

    Ge-doped plastics are used in inertial fusion targets. Doped plastics are complex mixtures and the validation of their properties in a broad range of thermodynamic conditions requires an experimental validation. The metallization of plastics appears when shock waves generated by power lasers create pressures around 10 6 bar and temperatures around 10.000 K. The shock front propagating in the plastic becomes reflective. We have performed experiments to test the mathematical models describing the compressibility of such materials. We have compared the Thomas-Fermi model that is implemented in the QEOS formalism (Quotidian Equation of State) with 2 other models: the Sommerfeld metal model and a model that allows the closure of the semi-conducting gap. It appears that the Thomas-Fermi model predicts satisfactorily the compressibility of a mixture compressed at a few 10 6 bars, but over-estimates the average ionisation by a factor up to 10 which leads to an over-estimation of the metallization step

  13. Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru; Antonov, A. V.; Drozdov, M. N.; Schmagin, V. B.; Novikov, A. V. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhni Novgorod, 23 Prospekt Gagarina, 603950 Nizhny Novgorod (Russian Federation); Spirin, K. E. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation)

    2015-10-14

    Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb segregation ratio in Ge on growth temperature was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms. A nearly 5-orders-of-magnitude increase in the Sb segregation ratio in a relatively small temperature range of 180–350 °C was obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries and high crystalline quality using the temperature switching method that was proposed earlier for Si-based structures. This technique was employed for fabrication of different kinds of n-type Ge structures which can be useful for practical applications like heavily doped n{sup +}-Ge films or δ-doped layers. Estimation of the doping profiles sharpness yielded the values of 2–5 nm per decade for the concentration gradient at the leading edge and 2–3 nm for the full-width-half-maximum of the Ge:Sb δ-layers. Electrical characterization of grown Ge:Sb structures revealed nearly full electrical activation of Sb atoms and the two-dimensional nature of charge carrier transport in δ-layers.

  14. Single ferromagnetic fluctuations in UCoGe revealed by 73Ge- and 59Co-NMR studies

    Science.gov (United States)

    Manago, Masahiro; Ishida, Kenji; Aoki, Dai

    2018-02-01

    73Ge and 59Co nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) measurements have been performed on a 73Ge-enriched single-crystalline sample of the ferromagnetic superconductor UCoGe in the paramagnetic state. The 73Ge NQR parameters deduced from NQR and NMR are close to those of another isostructural ferromagnetic superconductor URhGe. The Knight shifts of the Ge and Co sites are well scaled to each other when the magnetic field is parallel to the b or c axis. The hyperfine coupling constants of Ge are estimated to be close to those of Co. The large difference of spin susceptibilities between the a and b axes could lead to the different response of the superconductivity and ferromagnetism with the field parallel to these directions. The temperature dependence of the nuclear spin-lattice relaxation rates 1 /T1 at the two sites is similar to each other above 5 K. These results indicate that the itinerant U-5 f electrons are responsible for the ferromagnetism in this compound, consistent with previous studies. The similarities and differences in the three ferromagnetic superconductors are discussed.

  15. Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

    International Nuclear Information System (INIS)

    Soares, G. V.; Krug, C.; Miotti, L.; Bastos, K. P.; Lucovsky, G.; Baumvol, I. J. R.; Radtke, C.

    2011-01-01

    Thermally driven atomic transport in HfO 2 /GeO 2 /substrate structures on Ge(001) and Si(001) was investigated in N 2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO 2 /Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO 2 /GeO 2 stacks are stable only if isolated from the Ge substrate.

  16. Luminescence of one dimensional ZnO, GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanostructure through thermal evaporation of Zn and Ge powder mixture

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Vuong-Hung, E-mail: vuong.phamhung@hust.edu.vn; Kien, Vu Trung; Tam, Phuong Dinh; Huy, Pham Thanh

    2016-07-15

    Graphical abstract: - Highlights: • ZnO and GeO{sub 2}–ZnGeO{sub 4} nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture. • Morphology of specimens were observed to have a nanowire structure to rod-like morphology. • Strong NBE emission band with suppressed visible green emission band were observed on the dominant ZnO nanowires. • Strong emission of ∼530 nm were observed on the GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires. - Abstract: This paper reports the first attempt for fabrication of thermal evaporated Zn–Ge powder mixture to achieve near-band-edge (NBE) emission of ZnO and visible emission of GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires with controllable intensities. The nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture, particularly, by using different Zn:Ge ratio, temperature and evaporated times. The morphology of nanowires was depended on the Zn and Ge ratio that was observed to have a nanowire structure to rod-like morphology. The thermal evaporation of Zn:Ge powder mixture resulted in formation of dominant ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires as a function of evaporated parameters. These results suggest that the application of thermal evaporation of Zn and Ge mixture for potential application in synthesis of ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires for optoelectronic field.

  17. Sn-based Ge/Ge{sub 0.975}Sn{sub 0.025}/Ge p-i-n photodetector operated with back-side illumination

    Energy Technology Data Exchange (ETDEWEB)

    Chang, C.; Li, H.; Huang, S. H.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan (China); Sun, G.; Soref, R. A. [Department of Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125 (United States)

    2016-04-11

    We report an investigation of a GeSn-based p-i-n photodetector grown on a Ge wafer that collects light signal from the back of the wafer. Temperature dependent absorption measurements performed over a wide temperature range (300 K down to 25 K) show that (a) absorption starts at the indirect bandgap of the active GeSn layer and continues up to the direct bandgap of the Ge wafer, and (b) the peak responsivity increases rapidly at first with decreasing temperature, then increases more slowly, followed by a decrease at the lower temperatures. The maximum responsivity happens at 125 K, which can easily be achieved with the use of liquid nitrogen. The temperature dependence of the photocurrent is analyzed by taking into consideration of the temperature dependence of the electron and hole mobility in the active layer, and the analysis result is in reasonable agreement with the data in the temperature regime where the rapid increase occurs. This investigation demonstrates the feasibility of a GeSn-based photodiode that can be operated with back-side illumination for applications in image sensing systems.

  18. Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures

    International Nuclear Information System (INIS)

    Zhang, Rui; Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi

    2013-01-01

    The ultrathin GeO x /Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al 2 O 3 /Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO x layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of ∼0.3 nm with an increase in the GeO x thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of ∼0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO x /Ge interfaces on Ge (100) and (111) surfaces.

  19. Organo-Zintl-based superatoms: [Ge9(CHO)3] and [Ge9(CHO)

    Science.gov (United States)

    Reddy, G. Naaresh; Jena, Puru; Giri, Santanab

    2017-10-01

    A systematic study, based on density functional theory and different hybrid functionals for exchange-correlation potential, shows that the electron affinities of organo-zintl clusters [Ge9(R)n] [R = CHO; n = 1, 3] are close to that of chlorine (3.6 eV) and iodine (3.0 eV). A detailed study of the molecular orbitals of these complexes, when compared to those of Al13-, Cl- and I-, confirm that they behave as superatoms, mimicking the chemistry of halogens. This study expands the scope of superatoms by including a new class of pseudo-halogens based on ligated organo-Zintl ions.

  20. Increasing the thermoelectric power factor of Ge17Sb2Te20 by adjusting the Ge/Sb ratio

    Science.gov (United States)

    Williams, Jared B.; Mather, Spencer P.; Page, Alexander; Uher, Ctirad; Morelli, Donald T.

    2017-07-01

    We have investigated the thermoelectric properties of Ge17Sb2Te20. This compound is a known phase change material with electronic properties that depend strongly on temperature. The thermoelectric properties of this compound can be tuned by altering the stoichiometry of Ge and Sb without the use of additional foreign elements during synthesis. This tuning results in a 26% increase in the thermoelectric power factor at 723 K. Based on a single parabolic band model we show that the pristine material is optimally doped, and thus, a reduction in the lattice thermal conductivity of pure Ge17Sb2Te20 should result in an enhanced thermoelectric figure of merit.

  1. Electrical circuit model of ITO/AZO/Ge photodetector

    Directory of Open Access Journals (Sweden)

    Malkeshkumar Patel

    2017-10-01

    Full Text Available In this data article, ITO/AZO/Ge photodetector was investigated for electrical circuit model. Due to the double (ITO and AZO transparent metal-oxide films (DOI:10.1016/j.mssp.2016.03.007 (Yun et al., 2016 [1], the Ge heterojunction device has a better interface quality due to the AZO layer with a low electrical resistance due to the ITO layer (Yun et al., 2015 [2]. The electrical and interfacial benefitted ITO/AZO/Ge heterojunction shows the quality Schottky junction. In order to investigate the device, the ITO/AZO/Ge heterojunction was analyzed by R–C circuit model using the impedance spectroscopy.

  2. The Role of Surface Passivation in Controlling Ge Nanowire Faceting.

    Science.gov (United States)

    Gamalski, A D; Tersoff, J; Kodambaka, S; Zakharov, D N; Ross, F M; Stach, E A

    2015-12-09

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. These results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, ⟨111⟩-oriented nanowires.

  3. Physics with polarized beams above GeV region

    International Nuclear Information System (INIS)

    Yokosawa, A.

    1980-01-01

    During the past several years many exciting and unexpected results have been observed in experiments with polarized beams. Those results are reviewed briefly. A new polarized beam line up to 600 GeV/c is also discussed. 4 figures

  4. Preparing for 1000 GeV physics at Fermilab

    International Nuclear Information System (INIS)

    Anon.

    1980-01-01

    The superconducting proton beams and the neutrino beams at Fermilab prepared for the research with 1000 GeV colliding proton and antiproton beams are described. Especially a new developed helium transfer line is described. (HSI).

  5. Fabrication of prototypes of Ge(li) semiconductor detector

    International Nuclear Information System (INIS)

    Santos, W.M.S.; Marti, G.V.; Rizzo, P.; Barros, S. de.

    1987-01-01

    The fabrication process of Ge(Li) semiconductor detector prototypes, from specific chemical treatments of doped monocrystal with receptor impurities (p + semicondutor) is presented. The detector characteristics, such as resulotion and operation tension are shown. (M.C.K.) [pt

  6. Cross-correlation analysis of Ge/Li/ spectra

    International Nuclear Information System (INIS)

    MacDonald, R.; Robertson, A.; Kennett, T.J.; Prestwich, W.V.

    1974-01-01

    A sensitive technique is proposed for activation analysis using cross-correlation and improved spectral orthogonality achieved through use of a rectangular zero area digital filter. To test the accuracy and reliability of the cross-correlation procedure five spectra obtained with a Ge/Li detector were combined in different proportions. Gaussian distributed statistics were then added to the composite spectra by means of a pseudo-random number generator. The basis spectra used were 76 As, 82 Br, 72 Ga, 77 Ge, and room background. In general, when the basis spectra were combined in roughly comparable proportions the accuracy of the techique proved to be excelent (>1%). However, of primary importance was the ability of the correlation technique to identify low intensity components in the presence of high intensity components. It was found that the detection threshold for Ge, for example, was not reached until the Ge content in the unfiltered spectrum was <0.16%. (T.G.)

  7. arXiv Charged Fermions Below 100 GeV

    CERN Document Server

    Egana-Ugrinovic, Daniel; Ruderman, Joshua T.

    2018-05-03

    How light can a fermion be if it has unit electric charge? We revisit the lore that LEP robustly excludes charged fermions lighter than about 100 GeV. We review LEP chargino searches, and find them to exclude charged fermions lighter than 90 GeV, assuming a higgsino-like cross section. However, if the charged fermion couples to a new scalar, destructive interference among production channels can lower the LEP cross section by a factor of 3. In this case, we find that charged fermions as light as 75 GeV can evade LEP bounds, while remaining consistent with constraints from the LHC. As the LHC collects more data, charged fermions in the 75–100 GeV mass range serve as a target for future monojet and disappearing track searches.

  8. Growth strategies to control tapering in Ge nanowires

    Directory of Open Access Journals (Sweden)

    P. Periwal

    2014-04-01

    Full Text Available We report the effect of PH3 on the morphology of Au catalyzed Ge nanowires (NWs. Ge NWs were grown on Si (111 substrate at 400 °C in the presence of PH3, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH3/GeH4 ratio causes passivation at NW surface. At high PH3 concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH3 flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH3-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth.

  9. Annealing-induced Ge/Si(100) island evolution

    International Nuclear Information System (INIS)

    Zhang Yangting; Drucker, Jeff

    2003-01-01

    Ge/Si(100) islands were found to coarsen during in situ annealing at growth temperature. Islands were grown by molecular-beam epitaxy of pure Ge and annealed at substrate temperatures of T=450, 550, 600, and 650 deg. C, with Ge coverages of 6.5, 8.0, and 9.5 monolayers. Three coarsening mechanisms operate in this temperature range: wetting-layer consumption, conventional Ostwald ripening, and Si interdiffusion. For samples grown and annealed at T=450 deg. C, consumption of a metastably thick wetting layer causes rapid initial coarsening. Slower coarsening at longer annealing times occurs by conventional Ostwald ripening. Coarsening of samples grown and annealed at T=550 deg. C occurs via a combination of Si interdiffusion and conventional Ostwald ripening. For samples grown and annealed at T≥600 deg. C, Ostwald ripening of SiGe alloy clusters appears to be the dominant coarsening mechanism

  10. Ge Quantum Dot Infrared Imaging Camera, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Luna Innovations Incorporated proposes to develop a high performance Ge quantum dots-based infrared (IR) imaging camera on Si substrate. The high sensitivity, large...

  11. The excess enthalpies of liquid Ge-Pb-Te alloys

    International Nuclear Information System (INIS)

    Blachnik, R.; Binder, J.; Schlieper, A.

    1997-01-01

    The excess enthalpies of liquid alloys in the ternary system Ge-Pb-Te were determined at 1210 K in a heat flow calorimeter for five sections Ge y Pb 1-y -Te with y = 0.2, 0.4, 0.5, 0.6 and 0.8 and at 1153 K for Ge 0.5 Pb 0.5 -Te. The enthalpy surface in the ternary system is determined by a valley of exothermic minima, stretching from an exothermic minimum at the composition GeTe to one at the composition PbTe in the respective binaries. The excess enthalpies in the limiting metallic binary were adapted with the Redlich-Kister formalism. For the description of the thermodynamic functions in the ternary system the equation of Bonnier was taken using ternary coefficients. The calculated curves are in good agreement with the experimental data. (orig.)

  12. Electronic and magnetic properties of Si substituted Fe3Ge

    International Nuclear Information System (INIS)

    Shanavas, K. V.; McGuire, Michael A.; Parker, David S.

    2015-01-01

    Using first principles calculations, we studied the effect of Si substitution in the hexagonal Fe 3 Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the magnitude of in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. Substituting Ge with the smaller Si ions also increases the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications such as permanent magnets. Our experimental measurements on samples of Fe 3 Ge 1−x Si x confirm these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial

  13. Superthin Solar Cells Based on AIIIBV/Ge Heterostructures

    Science.gov (United States)

    Pakhanov, N. A.; Pchelyakov, O. P.; Vladimirov, V. M.

    2017-11-01

    A comparative analysis of the prospects of creating superthin, light-weight, and highly efficient solar cells based on AIIIBV/InGaAs and AIIIBV/Ge heterostructures is performed. Technological problems and prospects of each variant are discussed. A method of thinning of AIIIBV/Ge heterostructures with the use of an effective temporary carrier is proposed. The method allows the process to be performed almost with no risk of heterostructure fracture, thinning of the Ge junction down to several tens of micrometers (or even several micrometers), significant enhancement of the yield of good structures, and also convenient and reliable transfer of thinned solar cells to an arbitrary light and flexible substrate. Such a technology offers a possibility of creating high-efficiency thin and light solar cells for space vehicles on the basis of mass-produced AIIIBV/Ge heterostructures.

  14. Electron density distribution in Si and Ge using multipole, maximum ...

    Indian Academy of Sciences (India)

    Si and Ge has been studied using multipole, maximum entropy method (MEM) and ... and electron density distribution using the currently available versatile ..... data should be subjected to maximum possible utility for the characterization of.

  15. Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO2 interface after capping with Al2O3 layer

    International Nuclear Information System (INIS)

    Paleari, S.; Molle, A.; Accetta, F.; Lamperti, A.; Cianci, E.; Fanciulli, M.

    2014-01-01

    The electrical activity of Ge dangling bonds is investigated at the interface between GeO 2 -passivated Ge(1 1 1) substrate and Al 2 O 3 grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy (EDMR). The Al 2 O 3 /GeO 2 /Ge stacked structure is promising as a mobility booster for the post-Si future electronic devices. EDMR proved to be useful in characterizing interface defects, even at the very low concentrations of state-of-the-art devices ( 10 cm −2 ). In particular, it is shown that capping the GeO 2 -passivated Ge(1 1 1) with Al 2 O 3 has no impact on the microstructure of the Ge dangling bond.

  16. Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO{sub 2} interface after capping with Al{sub 2}O{sub 3} layer

    Energy Technology Data Exchange (ETDEWEB)

    Paleari, S., E-mail: s.paleari6@campus.unimib.it [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Molle, A. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy); Accetta, F. [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Lamperti, A.; Cianci, E. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy); Fanciulli, M., E-mail: marco.fanciulli@unimib.it [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy)

    2014-02-01

    The electrical activity of Ge dangling bonds is investigated at the interface between GeO{sub 2}-passivated Ge(1 1 1) substrate and Al{sub 2}O{sub 3} grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy (EDMR). The Al{sub 2}O{sub 3}/GeO{sub 2}/Ge stacked structure is promising as a mobility booster for the post-Si future electronic devices. EDMR proved to be useful in characterizing interface defects, even at the very low concentrations of state-of-the-art devices (<10{sup 10} cm{sup −2}). In particular, it is shown that capping the GeO{sub 2}-passivated Ge(1 1 1) with Al{sub 2}O{sub 3} has no impact on the microstructure of the Ge dangling bond.

  17. On the DAMA and CoGeNT Modulations

    DEFF Research Database (Denmark)

    Frandsen, Mads Toudal; Kahlhoefer, Felix; March-Russell, John

    2011-01-01

    DAMA observes an annual modulation in their event rate, as might be expected from dark matter scatterings, while CoGeNT has reported evidence for a similar modulation. The simplest interpretation of these findings in terms of dark matter-nucleus scatterings is excluded by other direct detection...... constraints, while inelasticity enhances the annual modulation fraction of the signal, bringing the CoGeNT and CDMS results into better agreement....

  18. Elastic scattering crossovers from 50 to 175 GeV

    International Nuclear Information System (INIS)

    Anderson, R.L.; Ayres, D.S.; Barton, D.S.; Brenner, A.E.; Butler, J.; Cutts, D.; DeMarzo, C.; Diebold, R.; Elias, J.E.; Fines, J.; Friedman, J.I.; Gittelman, B.; Gottschalk, B.; Guerriero, L.; Gustavson, D.; Kendall, H.W.; Lanou, R.E.; Lavopa, P.; Levinson, L.J.; Litt, J.; Loh, E.; Maclay, G.J.; Maggi, G.; Massimo, J.T.; Meunier, R.; Mikenberg, G.; Nelson, B.; Posa, F.; Rich, K.; Ritson, D.M.; Rosenson, L.; Selvaggi, G.; Sogard, M.; Spinelli, P.; Verdier, R.; Waldner, F.; Weitsch, G.A.

    1976-01-01

    A comparison of K/sup plus-or-minus/p and p/sup plus-or-minus/p elastic scattering is made for incident energy 50 to 175 GeV. Average values of 0.19 +- 0.04 and 0.11 +- 0.02 GeV 2 were found for the invariant-momentum-transfer values of the Kp and pp crossover points, respectively

  19. Halbwachs no Collège de France

    Directory of Open Access Journals (Sweden)

    Laurent Mucchielli

    2001-01-01

    Full Text Available Este artigo apresenta documento escrito por Maurice Halbwachs, em seus cadernos de memória. Seu principal tema é a eleição de Halbwachs para o Collège de France.This article presents the document writen by Maurice Halbwachs, in his memory-books. Its main subject is the Halbwachs election for the Collège de France.

  20. Nb3Ge superconductive films grown with nitrogen

    International Nuclear Information System (INIS)

    Sigsbee, R.A.

    1978-01-01

    A superconductive film of Nb 3 Ge is produced by providing within a vacuum chamber a heated substrate and sources of niobium and germanium, reducing the pressure within the chamber to a residual pressure no greater than about 10 -5 mm Hg, introducing nitrogen into the resulting evacuated chamber in controlled amounts and vaporizing the niobium and germanium to deposit a film of Nb 3 Ge on the heated substrate

  1. Steering of sub-GeV electrons by ultrashort Si and Ge bent crystals

    Energy Technology Data Exchange (ETDEWEB)

    Sytov, A.I. [Ferrara Univ. (Italy). Dipt. di Fisica e Scienze della Terra; Belarusian State Univ., Minsk (Belarus). Inst. for Nuclear Problems; INFN Sezione di Ferrara (Italy); Bandiera, L.; Mazzolari, A.; Bagli, E.; Germogli, G.; Guidi, V.; Romagnoni, M. [Ferrara Univ. (Italy). Dipt. di Fisica e Scienze della Terra; INFN Sezione di Ferrara (Italy); De Salvador, D.; Carturan, S.; Maggioni, G. [INFN, Laboratori Nazionali di Legnaro (Italy); Padova Univ. (Italy). Dipt. di Fisica; Berra, A.; Prest, M. [Univ. dell' Insubria, Como (Italy); INFN, Sezione di Milano Bicocca, Milan (Italy); Durighello, C. [Ferrara Univ. (Italy). Dipt. di Fisica e Scienze della Terra; INFN, Laboratori Nazionali di Legnaro (Italy); Padova Univ. (Italy). Dipt. di Fisica; INFN Sezione di Ferrara (Italy); Klag, P.; Lauth, W. [Mainz Univ. (Germany). Inst. fuer Kernphysik; Tikhomirov, V.V. [Belarusian State Univ., Minsk (Belarus). Inst. for Nuclear Problems; Vallazza, E. [INFN, Sezione di Trieste (Italy)

    2017-12-15

    We report the observation of the steering of 855 MeV electrons by bent silicon and germanium crystals at the MAinzer MIkrotron. Crystals with 15 μm of length, bent along (111) planes, were exploited to investigate orientational coherent effects. By using a piezo-actuated mechanical holder, which allowed to remotely change the crystal curvature, it was possible to study the steering capability of planar channeling and volume reflection vs. the curvature radius and the atomic number, Z. For silicon, the channeling efficiency exceeds 35%, a record for negatively charged particles. This was possible due to the realization of a crystal with a thickness of the order of the dechanneling length. On the other hand, for germanium the efficiency is slightly below 10% due to the stronger contribution of multiple scattering for a higher-Z material. Nevertheless this is the first evidence of negative beam steering by planar channeling in a Ge crystal. Having determined for the first time the dechanneling length, one may design a Ge crystal based on such knowledge providing nearly the same channeling efficiency of silicon. The presented results are relevant for crystal-based beam manipulation as well as for the generation of e.m. radiation in bent and periodically bent crystals. (orig.)

  2. Steering of Sub-GeV electrons by ultrashort Si and Ge bent crystals

    Science.gov (United States)

    Sytov, A. I.; Bandiera, L.; De Salvador, D.; Mazzolari, A.; Bagli, E.; Berra, A.; Carturan, S.; Durighello, C.; Germogli, G.; Guidi, V.; Klag, P.; Lauth, W.; Maggioni, G.; Prest, M.; Romagnoni, M.; Tikhomirov, V. V.; Vallazza, E.

    2017-12-01

    We report the observation of the steering of 855 MeV electrons by bent silicon and germanium crystals at the MAinzer MIkrotron. Crystals with 15 μ m of length, bent along (111) planes, were exploited to investigate orientational coherent effects. By using a piezo-actuated mechanical holder, which allowed to remotely change the crystal curvature, it was possible to study the steering capability of planar channeling and volume reflection vs. the curvature radius and the atomic number, Z. For silicon, the channeling efficiency exceeds 35%, a record for negatively charged particles. This was possible due to the realization of a crystal with a thickness of the order of the dechanneling length. On the other hand, for germanium the efficiency is slightly below 10% due to the stronger contribution of multiple scattering for a higher-Z material. Nevertheless this is the first evidence of negative beam steering by planar channeling in a Ge crystal. Having determined for the first time the dechanneling length, one may design a Ge crystal based on such knowledge providing nearly the same channeling efficiency of silicon. The presented results are relevant for crystal-based beam manipulation as well as for the generation of e.m. radiation in bent and periodically bent crystals.

  3. LArGe. A liquid argon scintillation veto for GERDA

    International Nuclear Information System (INIS)

    Heisel, Mark

    2011-01-01

    LArGe is a GERDA low-background test facility to study novel background suppression methods in a low-background environment, for possible applications in the GERDA experiment. GERDA searches for the neutrinoless double-beta decay in 76 Ge, by operating naked germanium detectors submersed into 65 m 3 of liquid argon. Similarly, LArGe runs Ge-detectors in 1 m 3 (1.4 tons) of liquid argon, which in addition is instrumented with photomultipliers to detect argon scintillation light. The light is used in anti-coincidence with the germanium detectors, to effectively suppress background events that deposit energy in the liquid argon. This work adresses the design, construction, and commissioning of LArGe. The background suppression efficiency has been studied in combination with a pulse shape discrimination (PSD) technique for various sources, which represent characteristic backgrounds to GERDA. Suppression factors of a few times 10 3 have been achieved. First background data of LArGe (without PSD) yield a background index of (0.12-4.6).10 -2 cts/(keV.kg.y) (90% c.l.), which is at the level of the Gerda phase I design goal. Furthermore, for the first time we measure the natural 42 Ar abundance (in parallel to Gerda), and have indication for the 2νββ-decay in natural germanium. (orig.)

  4. The 50 GeV program at SLAC

    International Nuclear Information System (INIS)

    Prescott, C.Y.

    1994-03-01

    SLAC has undertaken a modes programs to upgrade the beam energy for fixed target experiments to 50 GeV. This upgrade is possible due to the previous extensive development work on the linac accelerating gradient for the SLC, which has been operational for over five years. The SLC can deliver a beam of energy up to 60 GeV using a pulse compression technique in the rf system which trades pulse length for a higher pulse amplitude. This mode of operation has been reliable and routine for the SLC. However the beam line transport which takes electrons or positrons from the end of the linac to the target in End Station A has not been upgraded from the original design energy of 25 GeV. The 50 GeV upgrade for the fixed target experiments consists in modifying and increasing the number of beam line dipole magnets to reach 50 GeV, plus modernization of the beam line instrumentation and controls. The plans for spin structure experiments using electron beams at energies up to 50 GeV are described

  5. Growth and evolution of nickel germanide nanostructures on Ge(001).

    Science.gov (United States)

    Grzela, T; Capellini, G; Koczorowski, W; Schubert, M A; Czajka, R; Curson, N J; Heidmann, I; Schmidt, Th; Falta, J; Schroeder, T

    2015-09-25

    Nickel germanide is deemed an excellent material system for low resistance contact formation for future Ge device modules integrated into mainstream, Si-based integrated circuit technologies. In this study, we present a multi-technique experimental study on the formation processes of nickel germanides on Ge(001). We demonstrate that room temperature deposition of ∼1 nm of Ni on Ge(001) is realized in the Volmer-Weber growth mode. Subsequent thermal annealing results first in the formation of a continuous NixGey wetting layer featuring well-defined terrace morphology. Upon increasing the annealing temperature to 300 °C, we observed the onset of a de-wetting process, characterized by the appearance of voids on the NixGey terraces. Annealing above 300 °C enhances this de-wetting process and the surface evolves gradually towards the formation of well-ordered, rectangular NixGey 3D nanostructures. Annealing up to 500 °C induces an Ostwald ripening phenomenon, with smaller nanoislands disappearing and larger ones increasing their size. Subsequent annealing to higher temperatures drives the Ni-germanide diffusion into the bulk and the consequent formation of highly ordered, {111} faceted Ni-Ge nanocrystals featuring an epitaxial relationship with the substrate Ni-Ge (101); (010) || Ge(001); (110).

  6. LArGe. A liquid argon scintillation veto for GERDA

    Energy Technology Data Exchange (ETDEWEB)

    Heisel, Mark

    2011-04-13

    LArGe is a GERDA low-background test facility to study novel background suppression methods in a low-background environment, for possible applications in the GERDA experiment. GERDA searches for the neutrinoless double-beta decay in {sup 76}Ge, by operating naked germanium detectors submersed into 65 m{sup 3} of liquid argon. Similarly, LArGe runs Ge-detectors in 1 m{sup 3} (1.4 tons) of liquid argon, which in addition is instrumented with photomultipliers to detect argon scintillation light. The light is used in anti-coincidence with the germanium detectors, to effectively suppress background events that deposit energy in the liquid argon. This work adresses the design, construction, and commissioning of LArGe. The background suppression efficiency has been studied in combination with a pulse shape discrimination (PSD) technique for various sources, which represent characteristic backgrounds to GERDA. Suppression factors of a few times 10{sup 3} have been achieved. First background data of LArGe (without PSD) yield a background index of (0.12-4.6).10{sup -2} cts/(keV.kg.y) (90% c.l.), which is at the level of the Gerda phase I design goal. Furthermore, for the first time we measure the natural {sup 42}Ar abundance (in parallel to Gerda), and have indication for the 2{nu}{beta}{beta}-decay in natural germanium. (orig.)

  7. Photodetachment cross-section of in a three-dimensional cubical ...

    Indian Academy of Sciences (India)

    DE-HUA WANG

    2017-10-19

    Oct 19, 2017 ... DE-HUA WANG. ∗. , PANG-ZHI .... on the surfaces along x, y, z directions, respectively. Then the ..... [20] Y Han, L F Wang, S Y Ran and G C Yang, Physica B. 405, 3082 ... [36] D H Wang, Y J Yu and S L Lin, Chin. Opt. Lett.

  8. Antioxidant and Anti-proliferative Activities of Flavonoids from ...

    African Journals Online (AJOL)

    significant growth inhibitory effect on RKO cells with IC50 of 39.08 μmol/L and 17.68 μmol/L, respectively ..... YJ.. Essential oil from rhizomes of Ligusticum chuanxiong induces apoptosis in hypertrophic scar ... Liu H, Mou Y, Zhao J, Wang J, Zhou L, Wang M, Wang. D, Han J, Yu Z, Yang F. Flavonoids from Halostachys.

  9. Journal of Genetics | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Home; Journals; Journal of Genetics. YANG LUO. Articles written in Journal of Genetics. Volume 90 Issue 2 August 2011 pp 339-342 Research Note. Novel vitamin D 1-hydroxylase gene mutations in a Chinese vitamin-D-dependent rickets type I patient · Lihua Cao Fang Liu Yu Wang Jian Ma Shusen Wang Libo Wang ...

  10. Measurement of energy transitions for the decay radiations of 75Ge and 69Ge in a high purity germanium detector

    Science.gov (United States)

    Aydın, Güral; Usta, Metin; Oktay, Adem

    2018-06-01

    Photoactivation experiments have a wide range of application areas in nuclear, particle physics, and medical physics such as measuring energy levels and half-lifes of nuclei, experiments for understanding imaging methods in medicine, isotope production for patient treatment, radiation security and transportation, radiation therapy, and astrophysics processes. In this study, some energy transition values of the decay radiations of 75Ge and 69Ge, which are the products of photonuclear reactions (γ, n) with germanium isotopes (75Ge and 69Ge), were measured. The gamma spectrum as a result of atomic transitions were analysed by using a high purity semiconductor germanium detector and the energy transition values which are presented here were compared with the ones which are the best in literature. It was observed that the results presented are in agreement with literature in error range and some results have better precisions.

  11. Atomic diffusion in laser irradiated Ge rich GeSbTe thin films for phase change memory applications

    Science.gov (United States)

    Privitera, S. M. S.; Sousa, V.; Bongiorno, C.; Navarro, G.; Sabbione, C.; Carria, E.; Rimini, E.

    2018-04-01

    The atomic diffusion and compositional variations upon melting have been studied by transmission electron microscopy and electron energy loss spectroscopy in Ge rich GeSbTe films, with a composition optimized for memory applications. Melting and quenching has been achieved by laser pulses, in order to study pure thermal diffusion without electric field induced electromigration. The effect of different laser energy densities has been investigated. The diffusion of Ge atoms in the molten phase is found to be a prominent mechanism and, by employing finite elements computational analysis, a diffusion coefficient of Ge on the order of 5  ×  10-5 cm2 s-1 has been estimated.

  12. Ferro electrical properties of GeSbTe thin films; Propiedades ferroelectricas de peliculas delgadas de GeSbTe

    Energy Technology Data Exchange (ETDEWEB)

    Gervacio A, J. J.; Prokhorov, E.; Espinoza B, F. J., E-mail: jgervacio@qro.cinvestav.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Juriquilla, 76230 Queretaro (Mexico)

    2011-07-01

    The aim of this work is to investigate and compare ferro electrical properties of thin GeSbTe films with composition Ge{sub 4}Sb{sub 1}Te{sub 5} (with well defined ferro electrical properties) and Ge{sub 2}Sb{sub 2}Te{sub 5} using impedance, optical reflection, XRD, DSc and Piezo response Force Microscopy techniques. The temperature dependence of the capacitance in both materials shows an abrupt change at the temperature corresponding to ferroelectric-paraelectric transition and the Curie-Weiss dependence. In Ge{sub 2}Sb{sub 2}Te{sub 5} films this transition corresponds to the end from a NaCl-type to a hexagonal transformation. Piezo response Force Microscopy measurements found ferroelectric domains with dimension approximately equal to the dimension of grains. (Author)

  13. Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

    KAUST Repository

    Dong, Y.

    2014-07-26

    Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.

  14. Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer

    International Nuclear Information System (INIS)

    Nie Tianxiao; Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin; Chen Zhigang; Zou Jin

    2011-01-01

    A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

  15. Missing mass spectra in pp inelastic scattering at total energies of 23 GeV and 31 GeV

    CERN Document Server

    Albrow, M G; Barber, D P; Bogaerts, A; Bosnjakovic, B; Brooks, J R; Clegg, A B; Erné, F C; Gee, C N P; Locke, D H; Loebinger, F K; Murphy, P G; Rudge, A; Sens, Johannes C; Van der Veen, F

    1974-01-01

    Results are reported of measurements of the momentum spectra of protons emitted at small angles in inelastic reactions at the CERN ISR. The data are for total energies s/sup 1///sub 2/ of 23 GeV and 31 GeV. The structure of the peak at low values of the missing mass M (of the system recoiling against the observed proton) is studied. The missing mass distributions have the form (M/sup 2/)-/sup B(t)/ where t is the four-momentum transfer squared. B(t) drops from 0.98+or-0.06 at t=-0.15 GeV/sup 2/ to 0.20+or-0.15 at t=-1.65 GeV/sup 2/. The results are compared with a simple triple-Regge formula. (12 refs).

  16. Coarsening of Ni-Ge solid-solution precipitates in 'inverse' Ni{sub 3}Ge alloys

    Energy Technology Data Exchange (ETDEWEB)

    Ardell, Alan J., E-mail: alan.ardell@gmail.com [National Science Foundation, 4201 Wilson Boulevard, Arlington, VA 22230 (United States); Ma Yong [Aquatic Sensor Network Technology LLC, Storrs, CT 06268 (United States)

    2012-07-30

    Highlights: Black-Right-Pointing-Pointer We report microstructural evolution of disordered Ni-Ge precipitates in Ni{sub 3}Ge alloys. Black-Right-Pointing-Pointer Coarsening kinetics and particle size distributions are presented. Black-Right-Pointing-Pointer Data are analyzed quantitatively using the MSLW theory, but agreement is only fair. Black-Right-Pointing-Pointer The shapes of large precipitates are unusual, with discus or boomerang cross-sections. Black-Right-Pointing-Pointer Results are compared with morphology, kinetics of Ni-Al in inverse Ni{sub 3}Al alloys. - Abstract: The morphological evolution and coarsening kinetics of Ni-Ge solid solution precipitates from supersaturated solutions of hypostoichiometric Ni{sub 3}Ge were investigated in alloys containing from 22.48 to 23.50 at.% Ge at 600, 650 and 700 Degree-Sign C. The particles evolve from spheres to cuboids, though the flat portions of the interfaces are small. At larger sizes the precipitates coalesce into discus shapes, and are sometimes boomerang-shaped in cross section after intersection. The rate constant for coarsening increases strongly with equilibrium volume fraction, much more so than predicted by current theories; this is very different from the coarsening behavior of Ni{sub 3}Ge precipitates in normal Ni-Ge alloys and of Ni-Al precipitates in inverse Ni{sub 3}Al alloys. The activation energy for coarsening, 275.86 {+-} 24.17 kJ/mol, is somewhat larger than the result from conventional diffusion experiments, though within the limits of experimental error. Quantitative agreement between theory and experiment, estimated using available data on tracer diffusion coefficients in Ni{sub 3}Ge, is fair, the calculated rate constants exceeding measured ones by a factor of about 15. The particle size distributions are not in very good agreement with the predictions of any theory. These results are discussed in the context of recent theories and observations.

  17. Coarsening of Ni–Ge solid-solution precipitates in “inverse” Ni3Ge alloys

    International Nuclear Information System (INIS)

    Ardell, Alan J.; Ma Yong

    2012-01-01

    Highlights: ► We report microstructural evolution of disordered Ni–Ge precipitates in Ni 3 Ge alloys. ► Coarsening kinetics and particle size distributions are presented. ► Data are analyzed quantitatively using the MSLW theory, but agreement is only fair. ► The shapes of large precipitates are unusual, with discus or boomerang cross-sections. ► Results are compared with morphology, kinetics of Ni–Al in inverse Ni 3 Al alloys. - Abstract: The morphological evolution and coarsening kinetics of Ni–Ge solid solution precipitates from supersaturated solutions of hypostoichiometric Ni 3 Ge were investigated in alloys containing from 22.48 to 23.50 at.% Ge at 600, 650 and 700 °C. The particles evolve from spheres to cuboids, though the flat portions of the interfaces are small. At larger sizes the precipitates coalesce into discus shapes, and are sometimes boomerang-shaped in cross section after intersection. The rate constant for coarsening increases strongly with equilibrium volume fraction, much more so than predicted by current theories; this is very different from the coarsening behavior of Ni 3 Ge precipitates in normal Ni–Ge alloys and of Ni–Al precipitates in inverse Ni 3 Al alloys. The activation energy for coarsening, 275.86 ± 24.17 kJ/mol, is somewhat larger than the result from conventional diffusion experiments, though within the limits of experimental error. Quantitative agreement between theory and experiment, estimated using available data on tracer diffusion coefficients in Ni 3 Ge, is fair, the calculated rate constants exceeding measured ones by a factor of about 15. The particle size distributions are not in very good agreement with the predictions of any theory. These results are discussed in the context of recent theories and observations.

  18. Silicon and Ge in the deep sea deduced from Si isotope and Ge measurements in giant glass sponges

    Science.gov (United States)

    Jochum, K. P.; Schuessler, J. A.; Haug, G. H.; Andreae, M. O.; Froelich, P. N.

    2016-12-01

    Biogenic silica, such as giant glass spicules of the deep-sea sponge Monorhaphis chuni, is an archive to monitor paleo-Si and -Ge in past seawater. Here we report on Si isotopes and Ge/Si ratios in up to 2.7 m long spicules using LA-(MC)-ICP-MS. Isotope ratios of Si are suitable proxies for Si concentrations in seawater, because Si isotope fractionation into biogenic silica is a function of seawater dissolved Si concentration. The δ30Si values for our specimens range from about - 0.5 ‰ to - 3.6 ‰ and are much lower than modern (>1000 m) seawater δ30Si of about 1.3 ‰. Interestingly, there is a systematic Si isotopic and Ge variation from the rim to the center of the cross sections, which we interpret as seawater paleo-Si and -Ge changes. The lifetime of the giant sponges appears to be between about 6 and 14 ka. These age estimates were obtained by comparing our analytical data with various paleo-markers of the glacial-interglacial termination. Thus, the entire Holocene and the end of the last glacial period are contained in the oldest giant spicules. The derived Si and Ge seawater concentrations are ca. 12 % higher and 20 % lower, respectively, during the late glacial than at present. Possible explanations for changing Si, Ge and Ge/Si during the deglaciation could be changes in riverine, glacial, and/or eolian deliveries of silica to the oceans and changes in marine sedimentary reverse weathering, which removes Ge into marine sediments during opal dissolution and diagenesis.

  19. Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations

    International Nuclear Information System (INIS)

    Kwak, D.W.; Lee, D.W.; Oh, J.S.; Lee, Y.H.; Cho, H.Y.

    2012-01-01

    SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H + /He + ion-implantations. Deep level defects in these structures were investigated using deep level transient spectroscopy (DLTS) by varying the pulse injection time. According to the DLTS measurements, a deep level defect induced during the Ge condensation process was found at 0.28 eV above the valence band with a capture cross section of 2.67 × 10 −17 cm 2 , two extended deep levels were also found at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17 × 10 −14 cm 2 and 0.96 × 10 −15 cm 2 , respectively. In the SGOI samples with ion-implantation, the densities of the newly generated defects as well as the existing defects were decreased effectively. Furthermore, the Coulomb barrier heights of the extended deep level defects were drastically reduced. Thus, we suggest that the Ge condensation method with H + ion implantation could reduce deep level defects generated from the condensation and control the electrical properties of the condensed SiGe layers. - Highlights: ► We have fabricated low-defective SiGe-on-Insulator (SGOI) with implantation method. ► H + and He + -ions are used for ion-implantation method. ► We have investigated the deep level defects of SGOI layers. ► Ge condensation method using H + ion implantation could reduce extended defects. ► They could enhance electrical properties.

  20. Properties of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yi; Rehman, Habib ur; Springborg, Michael [Physical and Theoretical Chemistry, University of Saarland, 66123 Saarbrücken (Germany)

    2015-01-22

    The structures of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters with up to 44 atoms have been determined theoretically using an unbiased structure-optimization method in combination with a parametrized, density-functional description of the total energy for a given structure. By analyzing the total energy in detail, particularly stable clusters are identified. Moreover, general trends in the structures are identified with the help of specifically constructed descriptors.

  1. Next Generation, Si-Compatible Materials and Devices in the Si-Ge-Sn System

    Science.gov (United States)

    2015-10-09

    and conclusions The work initially focused on growth of next generation Ge1-ySny alloys on Ge buffered Si wafers via UHV CVD depositions of Ge3H8...Abstract The work initially focused on growth of next generation Ge1-ySny alloys on Ge buffered Si wafers via UHV CVD depositions of Ge3H8, SnD4. The...AFRL-AFOSR-VA-TR-2016-0044 Next generation, Si -compatible materials and devices in the Si - Ge -Sn system John Kouvetakis ARIZONA STATE UNIVERSITY Final

  2. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

    OpenAIRE

    Zhang, L; Guo, Y; Hassan, VV; Tang, K; Foad, MA; Woicik, JC; Pianetta, P; Robertson, John; McIntyre, PC

    2016-01-01

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native Si...

  3. Ge nanoclusters in PECVD-deposited glass caused only by heat treatment

    DEFF Research Database (Denmark)

    Ou, Haiyan; Rørdam, Troels Peter; Rottwitt, Karsten

    2008-01-01

    This paper reports the formation of Ge nanoclusters in a multi-layer structure consisting of alternating thin films of Ge-doped silica glass and SiGe, deposited by plasma-enhanced chemical vapor deposition (PECVD) and post annealed at 1100 °C in N2 atmosphere. We studied the annealed samples...... embedded with Ge nanoclusters after annealing. These nanoclusters are crystalline and varied in size. There were no clusters in the Ge-doped glass layer. Raman spectra verified the existence of crystalline Ge clusters. The positional shift of the Ge vibrational peak with the change of the focus depth...

  4. Quantitative SIMS analysis of SiGe composition with low energy O2+ beams

    International Nuclear Information System (INIS)

    Jiang, Z.X.; Kim, K.; Lerma, J.; Corbett, A.; Sieloff, D.; Kottke, M.; Gregory, R.; Schauer, S.

    2006-01-01

    This work explored quantitative analyses of SiGe films on either Si bulk or SOI wafers with low energy SIMS by assuming a constant ratio between the secondary ion yields of Si + and Ge + inside SiGe films. SiGe samples with Ge contents ranging from 15 to 65% have been analyzed with a 1 keV O 2 + beam at normal incidence. For comparison, the samples were also analyzed with RBS and/or AES. The Ge content as measured with SIMS, based on a single SiGe/Si or SiGe/SOI standard, exhibited good agreement with the corresponding RBS and AES data. It was concluded that SIMS was capable of providing accurate characterization of the SiGe composition with the Ge content up to 65%

  5. Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers.

    Science.gov (United States)

    Niu, Gang; Capellini, Giovanni; Schubert, Markus Andreas; Niermann, Tore; Zaumseil, Peter; Katzer, Jens; Krause, Hans-Michael; Skibitzki, Oliver; Lehmann, Michael; Xie, Ya-Hong; von Känel, Hans; Schroeder, Thomas

    2016-03-04

    The integration of dislocation-free Ge nano-islands was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular array of nanometer sized Si tips with (001) facet exposed among a SiO2 matrix. These wafers were fabricated by complementary metal-oxide-semiconductor (CMOS) compatible nanotechnology. Calculations based on nucleation theory predict that the selective growth occurs close to thermodynamic equilibrium, where condensation of Ge adatoms on SiO2 is disfavored due to the extremely short re-evaporation time and diffusion length. The growth selectivity is ensured by the desorption-limited growth regime leading to the observed pattern independence, i.e. the absence of loading effect commonly encountered in chemical vapor deposition. The growth condition of high temperature and low deposition rate is responsible for the observed high crystalline quality of the Ge islands which is also associated with negligible Si-Ge intermixing owing to geometric hindrance by the Si nano-tip approach. Single island as well as area-averaged characterization methods demonstrate that Ge islands are dislocation-free and heteroepitaxial strain is fully relaxed. Such well-ordered high quality Ge islands present a step towards the achievement of materials suitable for optical applications.

  6. The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices

    International Nuclear Information System (INIS)

    Ferre Llin, L.; Samarelli, A.; Weaver, J. M. R.; Dobson, P. S.; Paul, D. J.; Cecchi, S.; Chrastina, D.; Isella, G.; Etzelstorfer, T.; Stangl, J.; Müller Gubler, E.

    2013-01-01

    The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si 0.5 Ge 0.5 superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a range of microfabricated test structures. For samples with barriers around 0.5 nm in thickness, the measured Seebeck coefficients were comparable to bulk p-SiGe at similar doping levels suggesting the holes see the material as a random bulk alloy rather than a superlattice. The Seebeck coefficients for Ge quantum wells of 2.85 ± 0.85 nm increased up to 533 ± 25 μV/K as the doping was reduced. The thermal conductivities are between 4.5 to 6.0 Wm −1 K −1 which are lower than comparably doped bulk Si 0.3 Ge 0.7 but higher than undoped Si/Ge superlattices. The highest measured figure of merit ZT was 0.080 ± 0.011 obtained for the widest quantum well studied. Analysis suggests that interface roughness is presently limiting the performance and a reduction in the strain between the quantum wells and barriers has the potential to improve the thermoelectric performance

  7. Influence of the entrance channel in the fusion reaction 318 MeV 74Ge+74Ge

    International Nuclear Information System (INIS)

    Zhu, L.H.; Cinausero, M.; Angelis, G. de; De Poli, M.; Fioretto, E.; Gadea, A.; Napoli, D.R.; Prete, G.; Lucarelli, F.

    1998-01-01

    Entrance channel effects in the fusion of heavy ions have been studied by using the 74 Ge+ 74 Ge reaction at 318 MeV. The population of the yrast superdeformed band in 144 Gd shows an increase when compared with the results obtained in the more asymmetric 48 Ti+ 100 Mo reaction at 215 MeV. The relative yields of the different evaporation residues produced in the 74 Ge+ 74 Ge and in the 48 Ti+ 100 Mo reactions are very similar, with the exception of the 145,144 Gd residual nuclei (3n and 4n decay channels) which are populated with a larger yield in the symmetric reaction. Statistical model calculations reproduce qualitatively such effect if a fission delay is explicitly taken into account. Effects related to fusion barrier fluctuations seem to be important in determining the spin distributions of the compound nucleus. The spectra of the high energy γ-rays emitted in the 74 Ge+ 74 Ge reaction have been measured as a function of the γ-ray multiplicity as well as in coincidence with selected evaporation residues. They are reproduced by standard statistical model calculations with GDR parameters taken from systematics, demonstrating that, in agreement with dynamical model prediction, the emission of γ-rays from the dinucleus formed in the earlier stage of the collision is unimportant. (orig.)

  8. Qian Yang Yu Yin Granule-containing serum inhibits angiotensin II-induced proliferation, reactive oxygen species production, and inflammation in human mesangial cells via an NADPH oxidase 4-dependent pathway.

    Science.gov (United States)

    Ding, Kang; Wang, Yan; Jiang, Weimin; Zhang, Yu; Yin, Hongping; Fang, Zhuyuan

    2015-03-25

    Qian Yang Yu Yin Granule (QYYYG), a traditional Chinese herbal medicine, has been indicated for renal damage in hypertension for decades in China, but little remains known regarding its underlying molecular mechanism. Therefore, we performed the current study in order to investigate the underlying molecular mechanism of QYYYG in the treatment of hypertensive renal damage. We hypothesize that QYYYG relieves hypertensive renal injury through an angiotensin II (Ang II)-nicotinamide adenine dinucleotide phosphate (NAPDH)-oxidase (NOX)-reactive oxygen species (ROS) pathway. In this study, we investigated the effects of QYYYG-containing serum (QYGS) in human mesangial cells (HMCs) against Ang II-induced cell proliferation, ROS production, and inflammation through the seropharmacological method. We found that QYGS could inhibit cell proliferation in Ang II-treated HMCs. In addition, QYGS considerably suppressed production of ROS, decreased mRNA and protein expression of NAPDH-oxidase 4 (NOX4), p22 (phox) , and activated Ras-related C3 botulinum toxin substrate 1 (GTP-Rac1); as well as counteracted the up-regulation of inflammatory markers including tumor necrosis factor-α (TNF-α), nuclear factor-κB (NF-κB) p65, and interleukin 6 (IL-6). These effects were further confirmed in HMCs transfected with specific small interfering RNA (siRNA) targeting NOX4. Taken together, these results suggest that a NOX4-dependent pathway plays an important role in regulating the inhibitory effect of QYGS. Our findings provide new insights into the molecular mechanisms of QYYYG and their role in the treatment of hypertensive nephropathy.

  9. Propagation of GeV neutrinos through Earth

    Science.gov (United States)

    Olivas, Yaithd Daniel; Sahu, Sarira

    2018-06-01

    We have studied the Earth matter effect on the oscillation of upward going GeV neutrinos by taking into account the three active neutrino flavors. For neutrino energy in the range 3 to 12 GeV we observed three distinct resonant peaks for the oscillation process νe ↔νμ,τ in three distinct densities. However, according to the most realistic density profile of the Earth, the second peak at neutrino energy 6.18 GeV corresponding to the density 6.6 g/cm3 does not exist. So the resonance at this energy can not be of MSW-type. For the calculation of observed flux of these GeV neutrinos on Earth, we considered two different flux ratios at the source, the standard scenario with the flux ratio 1 : 2 : 0 and the muon damped scenario with 0 : 1 : 0. It is observed that at the detector while the standard scenario gives the observed flux ratio 1 : 1 : 1, the muon damped scenario has a different ratio. For muon damped case with Eν 20 GeV, we get the average Φνe ∼ 0 and Φνμ ≃Φντ ≃ 0.45. The upcoming PINGU will be able to shed more light on the nature of the resonance in these GeV neutrinos and hopefully will also be able to discriminate among different processes of neutrino production at the source in GeV energy range.

  10. Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeO x /Al2O3 gate dielectrics

    Science.gov (United States)

    Wang, Xiaolei; Xiang, Jinjuan; Wang, Shengkai; Wang, Wenwu; Zhao, Chao; Ye, Tianchun; Xiong, Yuhua; Zhang, Jing

    2016-06-01

    Remote Coulomb scattering (RCS) on electron mobility degradation is investigated experimentally in Ge-based metal-oxide-semiconductor field-effect-transistors (MOSFETs) with GeO x /Al2O3 gate stacks. It is found that the mobility increases with greater GeO x thickness (7.8-20.8 Å). The physical origin of this mobility dependence on GeO x thickness is explored. The following factors are excluded: Coulomb scattering due to interfacial traps at GeO x /Ge, phonon scattering, and surface roughness scattering. Therefore, the RCS from charges in gate stacks is studied. The charge distributions in GeO x /Al2O3 gate stacks are evaluated experimentally. The bulk charges in Al2O3 and GeO x are found to be negligible. The density of the interfacial charge is  +3.2  ×  1012 cm-2 at the GeO x /Ge interface and  -2.3  ×  1012 cm-2 at the Al2O3/GeO x interface. The electric dipole at the Al2O3/GeO x interface is found to be  +0.15 V, which corresponds to an areal charge density of 1.9  ×  1013 cm-2. The origin of this mobility dependence on GeO x thickness is attributed to the RCS due to the electric dipole at the Al2O3/GeO x interface. This remote dipole scattering is found to play a significant role in mobility degradation. The discovery of this new scattering mechanism indicates that the engineering of the Al2O3/GeO x interface is key for mobility enhancement and device performance improvement. These results are helpful for understanding and engineering Ge mobility enhancement.

  11. Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

    International Nuclear Information System (INIS)

    RodrIguez, A; Ortiz, M I; Sangrador, J; RodrIguez, T; Avella, M; Prieto, A C; Torres, A; Jimenez, J; Kling, A; Ballesteros, C

    2007-01-01

    The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer

  12. High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1-x Ge x /Si buffer layer by RPCVD

    Science.gov (United States)

    Chen, Da; Guo, Qinglei; Zhang, Nan; Xu, Anli; Wang, Bei; Li, Ya; Wang, Gang

    2017-07-01

    The authors report a method to grow high quality strain-relaxed Ge epilayer on a combination of low temperature Ge seed layer and Si1-x Ge x /Si superlattice buffer layer by reduced pressure chemical vapor deposition system without any subsequent annealing treatment. Prior to the growth of high quality Ge epilayer, an ultrathin Si1-x Ge x /Si superlattice buffer layer with the thickness of 50 nm and a 460 nm Ge seed layer were deposited successively at low temperature. Then an 840 nm Ge epilayer was grown at high deposition rate with the surface root-mean-square roughness of 0.707 nm and threading dislocation density of 2.5  ×  106 cm-2, respectively. Detailed investigations of the influence of ultrathin low-temperature Si1-x Ge x /Si superlattice buffer layer on the quality of Ge epilayer were performed, which indicates that the crystalline quality of Ge epilayer can be significantly improved by enhancing the Ge concentration of Si1-x Ge x /Si superlattice buffer layer.

  13. Formation of Ge dot or film in Ge/Si heterostructure by using sub-monolayer carbon deposition on top and in-situ post annealing

    Energy Technology Data Exchange (ETDEWEB)

    Itoh, Yuhki, E-mail: itoh.yuhki@ecei.tohoku.ac.jp; Hatakeyama, Shinji; Kawashima, Tomoyuki; Washio, Katsuyoshi

    2016-03-01

    Effects of carbon (C) atoms on solid-phase epitaxial growth of Ge on Si(100) have been studied. C and Ge layers were deposited on Si(100) substrates at low temperature (150–300 °C) by using solid-source molecular beam epitaxy (MBE) system and subsequently annealed at 650 °C in the MBE chamber. The surface morphology after annealing changed depending on deposited amounts of C and deposition temperature of Ge. Ge dots were formed for small amounts of C while smooth Ge films were formed by large amounts of C varying with the Ge deposition temperature. The surface morphology after annealing was also affected by the as-deposited Ge crystallinity. The change in surface morphology depending on the amounts of deposited C was considered to be affected by the formation of Ge–C bonds which relieved the misfit strain between Ge and Si. The crystallinity of Ge deteriorated with increasing C coverage due to the incorporation of insoluble C atoms in the shape of both dots and films. - Highlights: • Effects of carbon on solid-phase epitaxy of C/Ge/Si(100) were studied. • Surface morphology changed depending on C amounts and Ge deposition temperature. • Solid-phase growth of Ge changed from large dots to smooth films with C coverage. • Transition of surface morphology was affected by the formation of Ge–C bonds.

  14. Effects of Ge-132 and GeO2 on seed germination and seedling growth of Oenothera biennis L. under NaCl stress.

    Science.gov (United States)

    Liu, Yan; Hou, Long-Yu; Li, Qing-Mei; Jiang, Ze-Ping; Gao, Wei-Dong; Zhu, Yan; Zhang, Hai-Bo

    2017-01-01

    To investigate the effects of β-carboxyethyl germanium sequioxide (Ge-132) and germanium dioxide (GeO 2 ) on improving salt tolerance of evening primrose (Oenothera biennis L.), seed germination, seedling growth, antioxidase and malondialdehyde (MDA) were observed under treatments of various concentrations (0, 5, 10, 20, 30 μM) of Ge in normal condition and in 50 mM NaCl solution. The results showed that both Ge-132 and GeO 2 treatments significantly increased seed germination percentage and shoot length in dose-dependent concentrations but inhibited early root elongation growth. 5-30 μM Ge-132 and 10, 20 μM GeO 2 treatments could significantly mitigate even eliminate harmful influence of salt, representing increased percentage of seed germination, root length, ratio between length of root and shoot, and decreased shoot length. These treatments also significantly decreased peroxidase (POD) and catalase (CAT) activities and MDA content. The mechanism is likely that Ge scavenges reactive oxygen species - especially hydrogen peroxide (H 2 O 2 ) - by its electron configuration 4S 2 4P 2 so as to reduce lipid peroxidation. This is the first report about the comparison of bioactivity effect of Ge-132 and GeO 2 on seed germination and seedling growth under salt stress. We conclude that Ge-132 is better than GeO 2 on promoting salt tolerance of seed and seedling.

  15. Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer on Ge

    Science.gov (United States)

    Suzuki, Akihiro; Nakatsuka, Osamu; Sakashita, Mitsuo; Zaima, Shigeaki

    2018-06-01

    The impact of a silicon germanium tin (Si x Ge1‑ x ‑ y Sn y ) ternary alloy interlayer on the Schottky barrier height (SBH) of metal/Ge contacts with various metal work functions has been investigated. Lattice matching at the Si x Ge1‑ x ‑ y Sn y /Ge heterointerface is a key factor for controlling Fermi level pinning (FLP) at the metal/Ge interface. The Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer having a small lattice mismatch with the Ge substrate can alleviate FLP at the metal/Ge interface significantly. A Si0.11Ge0.86Sn0.03 interlayer increases the slope parameter for the work function dependence of the SBH to 0.4. An ohmic behavior with an SBH below 0.15 eV can be obtained with Zr and Al/Si0.11Ge0.86Sn0.03/n-Ge contacts at room temperature.

  16. Poly-SiGe for MEMS-above-CMOS sensors

    CERN Document Server

    Gonzalez Ruiz, Pilar; Witvrouw, Ann

    2014-01-01

    Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

  17. ISABELLE: a 200 + 200 GeV colliding beam facility

    International Nuclear Information System (INIS)

    Courant, E.D.

    1977-01-01

    Plans are under way for the construction of a pair of intersecting storage rings providing for colliding beams of protons of energy at least 200 GeV. The rings (circumference 2.62 km) will contain superconducting magnets constructed with braided Nb--Ti filamentary wire, with a peak field of 4.0 T corresponding to an energy of 200 GeV. A current of 10 A of protons will be injected at 29 GeV from the existing AGS accelerator at Brookhaven, using the energy stacking technique similar to that employed at the CERN ISR; subsequently the stored beam will be accelerated gradually in the storage rings. Six intersection areas will be provided for experiments. They are designed to provide flexibility in beam characteristics for different experiments. The maximum luminosity at full energy is expected to be 1.0 x 10 33 cm -2 s -1 , at 29 GeV it will be approximately 10 32 cm -2 s -1 . Recent work with prototype magnets indicates that fields of 5.0 T can be produced. This has led to an alternative design of somewhat larger rings (circumference 3.77 km) that should be capable of providing colliding beams at 400 + 400 GeV

  18. Structural study of Ge/GaAs thin films

    International Nuclear Information System (INIS)

    Lazarov, V K; Lari, L; Lytvyn, P M; Kholevchuk, V V; Mitin, V F

    2012-01-01

    Ge/GaAs heterostructure research is largely motivated by the application of this material in solar cells, metal-oxide-semiconductor field-effect transistors, mm-wave mixer diodes, temperature sensors and photodetectors. Therefore, understanding of how the properties of Ge/GaAs heterostructure depend on its preparation (growth) is of importance for various high-efficiency devices. In this work, by using thermal Ge evaporation on GaAs(100), we studied structural properties of these films as a function of the deposition rate. Film grains size and morphology show strong dependence of the deposition rate. Low deposition rates results in films with large crystal grains and rough surface. At high deposition rates films become flatter and their crystal grains size decreases, while at very high deposition rates films become amorphous. Cross-sectional TEM of the films show that the Ge films are granular single crystal epitaxially grown on GaAs. The Ge/GaAs interface is atomically abrupt and free from misfit dislocations. Stacking faults along the [111] directions that originate at the interface were also observed. Finally by using the Kelvin probe microscopy we show that work function changes are related to the grain structure of the film.

  19. Magnetic Field Strength Evaluation Yu. S. Yefimov

    Indian Academy of Sciences (India)

    physical task is to evaluate the strength and topology of magnetic field in blazars and related ... polarization, spectral index of radiation, ratio of apparent velocity of the motion of matter along .... A detailed analysis of the evaluation of physical.

  20. Laule : [luuletused] / Li Yu ; tlk. Jaan Kaplinski

    Index Scriptorium Estoniae

    Yu, Li

    2002-01-01

    Sisu : "Vahused lained kui kuhjaksid kokku lund..."; "Õhtuks mingitud näo ja ihu valendus..."; "Kirkad lilled, hämus kuu, udu hõljuv loor..."; "Pool kevadet lahkumisest..."; "Sõnatult astun läänekambrisse..."; "metsapuilt on pudenenud kevadevärvid..."; "Vihmasabin kardina taga..."; "Möödunut võib ainult leinata..."; "Öö oli rajune-vihmane...";"Kevadlilled, sügisekuu - kaua veel..."

  1. Chuangzaoli xinlixue yu jiechu rencai peiyang

    DEFF Research Database (Denmark)

    Shi, Jiannong; Chen, N.; Du, Xiangyun

    2012-01-01

    as individual’s personal characteristics rather as the results of active interaction of creative individual and the environment. Creativity is a process of accumulation from quantitative changes to qualitative changes during a period of time. Meanwhile the authors discuss issues about individual’s creativity......The authors emphasize the importance of systemic perspectives for understanding human creativity after briefly introducing and commenting different theories or perspectives on creativity. It is emphasized that the manifestation of creativity or excellent achievement should not be treated...

  2. Selected papers of Yu. I. Manin

    CERN Document Server

    Manin, Yu I

    1996-01-01

    The book is a collection of research and review articles in several areas of modern mathematics and mathematical physics published in the span of three decades. The ICM Kyoto talk "Mathematics as Metaphor" summarises the author's view on mathematics as an outgrowth of natural language.

  3. Solid state synthesis of Mn{sub 5}Ge{sub 3} in Ge/Ag/Mn trilayers: Structural and magnetic studies

    Energy Technology Data Exchange (ETDEWEB)

    Myagkov, V.G.; Bykova, L.E.; Matsynin, A.A.; Volochaev, M.N.; Zhigalov, V.S.; Tambasov, I.A. [Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036 (Russian Federation); Mikhlin, Yu L. [Institute of Chemistry and Chemical Technology, SB RAS, Krasnoyarsk 660049 (Russian Federation); Velikanov, D.A. [Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036 (Russian Federation); Bondarenko, G.N. [Institute of Chemistry and Chemical Technology, SB RAS, Krasnoyarsk 660049 (Russian Federation)

    2017-02-15

    The thin-film solid-state reaction between elemental Ge and Mn across chemically inert Ag layers with thicknesses of (0, 0.3, 1 and 2.2 µm) in Ge/Ag/Mn trilayers was studied for the first time. The initial samples were annealed at temperatures between 50 and 500 °C at 50 °C intervals for 1 h. The initiation temperature of the reaction for Ge/Mn (without a Ag barrier layer) was ~ 120 °C and increased slightly up to ~ 250 °C when the Ag barrier layer thickness increased up to 2.2 µm. In spite of the Ag layer, only the ferromagnetic Mn{sub 5}Ge{sub 3} compound and the Nowotny phase were observed in the initial stage of the reaction after annealing at 500 °C. The cross-sectional studies show that during Mn{sub 5}Ge{sub 3} formation the Ge is the sole diffusing species. The magnetic and cross-sectional transmission electron microscopy (TEM) studies show an almost complete transfer of Ge atoms from the Ge film, via a 2.2 µm Ag barrier layer, into the Mn layer. We attribute the driving force of the long-range transfer to the long-range chemical interactions between reacting Mn and Ge atoms. - Graphical abstract: The direct visualization of the solid state reaction between Mn and Ge across a Ag buffer layer at 500 °C. - Highlights: • The migration of Ge, via an inert 2.2 µm Ag barrier, into a Mn layer. • The first Mn{sub 5}Ge{sub 3} phase was observed in reactions with different Ag layers. • The Ge is the sole diffusing species during Mn{sub 5}Ge{sub 3} formation • The long-range chemical interactions control the Ge atomic transfer.

  4. Development of 68Ge/68Ga Generator using 30 MeV Cyclotron

    International Nuclear Information System (INIS)

    Goo, Hur Min; Dae, Yang Seung; Hoon, Park Jeong; Dae, Park Yong; Je, Lee Eun; Bae, Kong Young; Kim, In Jong; Lee, Jin Woo; Hyun, Yu Kook

    2012-05-01

    The purpose of this research is to develop the 68 Ge/ 68 Ga generator where daughter nuclide 68 Ga can be eluted according to the designated periods from the resin which holds mother nuclide 68 Ge absorbed and to develop the 68 Ga utilization technology. 1. Target development for 68 Ge target and production of 68 Ge - Target designed for 68 Ge production with 30 MeV cyclotron - Target body material evaluation and proton beam irradiation 2. Separation of 68 Ge and development of column material and extraction system for 68 Ge/ 68 Ga separation - Development of 68 Ge separation method from nat Ga target - Development of absorbents for generator using stable isotope 3. Development of 68 Ga labelled radiopharmaceutical - Development of 68 Ga labelled benzamide derivative for diagnosis of melanoma - Development of 68 Ga dendrimer complex using nano-technology 4. Development of shield case for 68 Ge/ 68 Ga generator

  5. Intrinsic Ge nanowire nonvolatile memory based on a simple core–shell structure

    International Nuclear Information System (INIS)

    Chen, Wen-Hua; Liu, Chang-Hai; Li, Qin-Liang; Sun, Qi-Jun; Liu, Jie; Gao, Xu; Sun, Xuhui; Wang, Sui-Dong

    2014-01-01

    Intrinsic Ge nanowires (NWs) with a Ge core covered by a thick Ge oxide shell are utilized to achieve nanoscale field-effect transistor nonvolatile memories, which show a large memory window and a high ON/OFF ratio with good retention. The retainable surface charge trapping is considered to be responsible for the memory effect, and the Ge oxide shell plays a key role as the insulating tunneling dielectric which must be thick enough to prevent stored surface charges from leaking out. Annealing the device in air is demonstrated to be a simple and effective way to attain thick Ge oxide on the Ge NW surface, and the Ge-NW-based memory corresponding to thick Ge oxide exhibits a much better retention capability compared with the case of thin Ge oxide. (paper)

  6. Ion beam induced epitaxy in Ge- and B- coimplanted silicon

    International Nuclear Information System (INIS)

    Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

    1992-01-01

    The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

  7. Optical properties of individual site-controlled Ge quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Grydlik, Martyna, E-mail: moritz.brehm@jku.at, E-mail: martyna.grydlik@jku.at [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Center for Advancing Electronics Dresden, CfAED, TU Dresden (Germany); Brehm, Moritz, E-mail: moritz.brehm@jku.at, E-mail: martyna.grydlik@jku.at [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Tayagaki, Takeshi [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Langer, Gregor; Schäffler, Friedrich [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Schmidt, Oliver G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Center for Advancing Electronics Dresden, CfAED, TU Dresden (Germany)

    2015-06-22

    We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.

  8. Electronic Structure of GdCuGe Intermetallic Compound

    Science.gov (United States)

    Lukoyanov, A. V.; Knyazev, Yu. V.; Kuz'min, Yu. I.

    2018-04-01

    The electronic structure of GdCuGe intermetallic compound has been studied. Spin-polarized energy spectrum calculations have been performed by the band method with allowance for strong electron correlations in the 4 f-shell of gadolinium ions. Antiferromagnetic ordering of GdCuGe at low temperatures has been obtained in a theoretical calculation, with the value of the effective magnetic moment of gadolinium ions reproduced in fair agreement with experimental data. The electronic density of states has been analyzed. An optical conductivity spectrum has been calculated for GdCuGe; it reveals specific features that are analogous to the ones discovered previously in the GdCuSi compound with a similar hexagonal structure.

  9. Isomeric rations study for the α + 70 Ge

    International Nuclear Information System (INIS)

    Hora Villano, M.H. da.

    1984-12-01

    Isomeric ratios for 73 Se F,I produced in the reaction α + 70 Ge with incidence laboratory energy ranging from 8 to 28 MeV, have been measured using off-line γ-ray spectroscopy. Relative formation cross-section for isomeric and ground states were obtained with NAT Ge targets. Compound nucleus statistical analyses were performed using computer codes Alice and Julian. Unlike to Alice code, the Julian code predictions agreed quite well with the experimental results. This agreement may be explained by the inclusion of the γ competition in the deexcitation channels of the compound nucleus and by the correct level density calculation of the emission probabilities in the Julian code. Finally angular momentum populations for isomers formations in the reaction 70 Ge(α, n) 73 have been determined. (author)

  10. Flat Ge-doped optical fibres for food irradiation dosimetry

    International Nuclear Information System (INIS)

    Noor, N. Mohd; Jusoh, M. A.; Razis, A. F. Abdull; Alawiah, A.; Bradley, D. A.

    2015-01-01

    Exposing food to radiation can improve hygiene quality, germination control, retard sprouting, and enhance physical attributes of the food product. To provide for food safety, radiation dosimetry in irradiated food is required. Herein, fabricated germanium doped (Ge-doped) optical fibres have been used. The fibres have been irradiated using a gamma source irradiator, doses in the range 1 kGy to 10 kGy being delivered. Using Ge-doped optical fibres of variable size, type and dopant concentration, study has been made of linearity, reproducibility, and fading. The thermoluminescence (TL) yield of the fibres were obtained and compared. The fibres exhibit a linear dose response over the investigated range of doses, with mean reproducibility to within 2.69 % to 8.77 %, exceeding the dose range of all commercial dosimeters used in evaluating high doses for the food irradiation industry. TL fading of the Ge-doped flat fibres has been found to be < 13%

  11. A distributed charge storage with GeO2 nanodots

    International Nuclear Information System (INIS)

    Chang, T.C.; Yan, S.T.; Hsu, C.H.; Tang, M.T.; Lee, J.F.; Tai, Y.H.; Liu, P.T.; Sze, S.M.

    2004-01-01

    In this study, a distributed charge storage with GeO 2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO 2 are estimated to be about 5.5 nm and 4.3x10 11 cm -2 , respectively. The composition of the dots is also confirmed to be GeO 2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to ∼0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO 2 nanodots

  12. The 12 GeV Upgrade at Jefferson Lab

    International Nuclear Information System (INIS)

    Rolf Ent

    2002-01-01

    There has been a remarkable fruitful evolution of our picture of the behavior of strongly interacting matter during the almost two decades that have passed since the parameters of the Continuous Electron Beam Accelerator Facility (CEBAF) at Jefferson Lab were defined. These advances have revealed important new experimental questions best addressed by a CEBAF-class machine at higher energy. Fortunately, favorable technical developments coupled with foresight in the design of the facility make it feasible to triple (double) CEBAF's design (achieved) beam energy from 4 (6) GeV to 12 GeV, in a cost-effective manner: the Upgrade can be realized for about 15% of the cost of the initial facility. This Upgrade would enable the worldwide community to greatly expand its physics horizons. In addition to in general improving the figure of merit and momentum transfer range of the present Jefferson Lab physics program, raising the energy of the accelerator to 12 GeV opens up two main new areas of physics: (1) It allows direct exploration of the quark-gluon structure of hadrons and nuclei in the ''valence quark region''. It is known that inclusive electron scattering at the high momentum and energy transfers available at 12 GeV is governed by elementary interactions with quarks and, indirectly, gluons. The original CEBAF energy is not adequate to study this critical region, while with continuous 12 GeV beams one can cleanly access the entire ''valence quark region'' and exploit the newly discovered Generalized Parton Distributions. In addition, a 12-GeV Jefferson Lab can essentially complete the studies of the transition from hadronic to quark-gluon degrees of freedom. (2) It allows crossing the threshold above which the origins of quark confinement can be investigated. Specifically, 12 GeV will enable the production of certain ''exotic'' mesons. Whereas in the QCD region of asymptotic freedom ample evidence for the role of gluons exist through the observation of gluon jets

  13. Flat Ge-doped optical fibres for food irradiation dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Noor, N. Mohd; Jusoh, M. A. [Department of Imaging, Faculty of Medicine and Health Sciences, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Razis, A. F. Abdull [Food Safety Research Centre, Faculty of Food Science and Technology, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Laboratory of UPM-MAKNA Cancer Research, Institute of Bioscience, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Alawiah, A. [Faculty of Engineering and Technology, Multimedia University, 75450 Malacca (Malaysia); Bradley, D. A. [Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-04-24

    Exposing food to radiation can improve hygiene quality, germination control, retard sprouting, and enhance physical attributes of the food product. To provide for food safety, radiation dosimetry in irradiated food is required. Herein, fabricated germanium doped (Ge-doped) optical fibres have been used. The fibres have been irradiated using a gamma source irradiator, doses in the range 1 kGy to 10 kGy being delivered. Using Ge-doped optical fibres of variable size, type and dopant concentration, study has been made of linearity, reproducibility, and fading. The thermoluminescence (TL) yield of the fibres were obtained and compared. The fibres exhibit a linear dose response over the investigated range of doses, with mean reproducibility to within 2.69 % to 8.77 %, exceeding the dose range of all commercial dosimeters used in evaluating high doses for the food irradiation industry. TL fading of the Ge-doped flat fibres has been found to be < 13%.

  14. Surface tension and density of Si-Ge melts

    Science.gov (United States)

    Ricci, Enrica; Amore, Stefano; Giuranno, Donatella; Novakovic, Rada; Tuissi, Ausonio; Sobczak, Natalia; Nowak, Rafal; Korpala, Bartłomiej; Bruzda, Grzegorz

    2014-06-01

    In this work, the surface tension and density of Si-Ge liquid alloys were determined by the pendant drop method. Over the range of measurements, both properties show a linear temperature dependence and a nonlinear concentration dependence. Indeed, the density decreases with increasing silicon content exhibiting positive deviation from ideality, while the surface tension increases and deviates negatively with respect to the ideal solution model. Taking into account the Si-Ge phase diagram, a simple lens type, the surface tension behavior of the Si-Ge liquid alloys was analyzed in the framework of the Quasi-Chemical Approximation for the Regular Solutions model. The new experimental results were compared with a few data available in the literature, obtained by the containerless method.

  15. Strain controlled switching effects in phosphorene and GeS.

    Science.gov (United States)

    Li, B W; Wang, Y; Xie, Y Q; Zhu, L; Yao, K L

    2017-10-27

    By performing first principles calculations within the combined approach of density functional theory and nonequilibrium Green's function technique, we have designed some nanoelectronic devices to explore the ferroelastic switching of phosphorene and phosphorene analogs GeS. With the structure swapping along the zigzag direction and armchair direction, band gap transformed at different states due to their anisotropic phosphorene-like structure. From the initial state to the middle state, the band gap becomes progressively smaller, after that, it becomes wide. By analyzing transmission coefficients, it is found that the transport properties of phosphorene and GeS can be controlled by a uniaxial strain. The results also manifest that GeS has great potential to fabricate ferroic nonvolatile memory devices, because its relatively high on/off transmission coefficient ratio (∼1000) between the two stable ferroelastic states.

  16. CEBAF SRF Performance during Initial 12 GeV Commissioning

    International Nuclear Information System (INIS)

    Bachimanchi, Ramakrishna; Allison, Trent; Daly, Edward; Drury, Michael; Hovater, J; Lahti, George; Mounts, Clyde; Nelson, Richard; Plawski, Tomasz

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) energy upgrade from 6 GeV to 12 GeV includes the installation of eleven new 100 MV cryomodules (88 cavities). The superconducting RF cavities are designed to operate CW at an accelerating gradient of 19.3 MV/m with a Q L of 3x10 7 . Not all the cavities were operated at the minimum gradient of 19.3 MV/m with the beam. Though the initial 12 GeV milestones were achieved during the initial commissioning of CEBAF, there are still some issues to be addressed for long term reliable operation of these modules. This paper reports the operational experiences during the initial commissioning and the path forward to improve the performance of C100 (100 MV) modules.

  17. The CERN 400 GeV proton synchrotron (CERN SPS)

    International Nuclear Information System (INIS)

    Adams, J.B.

    1977-01-01

    The main characteristics of the CERN 400 GeV proton synchrotron (SPS) has described. Beam intensity averages about 5x10 12 protons per pulse. The CERN 28 GeV proton synchrotron serves as an injector for the SPS. There are 108 magnet periods in the machine with a phase shift per period of π/2. The magnet system consists of 800 dipoles with 1.8 T magnetic field and 216 quadrupoles with a field gradient of 20.7 T (per meter). The frequency chosen for the RF system of the SPS is 200 MHz. Two beam extraction systems are installed in the SPS, one to feed protons to the West Experimental Area, and the other to feed protons to the North Experimental Area. The planned development of the machine in the next few years has described. The cost per GeV of the SPS works out 3 to 4 times less than that of the CPS

  18. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.

    Science.gov (United States)

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-21

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  19. Characterising the 750 GeV diphoton excess

    International Nuclear Information System (INIS)

    Bernon, Jérémy; Goudelis, Andreas; Kraml, Sabine; Mawatari, Kentarou; Sengupta, Dipan

    2016-01-01

    We study kinematic distributions that may help characterise the recently observed excess in diphoton events at 750 GeV at the LHC Run 2. Several scenarios are considered, including spin-0 and spin-2 750 GeV resonances that decay directly into photon pairs as well as heavier parent resonances that undergo three-body or cascade decays. We find that combinations of the distributions of the diphoton system and the leading photon can distinguish the topology and mass spectra of the different scenarios, while patterns of QCD radiation can help differentiate the production mechanisms. Moreover, missing energy is a powerful discriminator for the heavy parent scenarios if they involve (effectively) invisible particles. While our study concentrates on the current excess at 750 GeV, the analysis is general and can also be useful for characterising other potential diphoton signals in the future.

  20. Kinetics of plasma oxidation of germanium-tin (GeSn)

    Science.gov (United States)

    Wang, Wei; Lei, Dian; Dong, Yuan; Zhang, Zheng; Pan, Jisheng; Gong, Xiao; Tok, Eng-Soon; Yeo, Yee-Chia

    2017-12-01

    The kinetics of plasma oxidation of GeSn at low temperature is investigated. The oxidation process is described by a power-law model where the oxidation rate decreases rapidly from the initial oxidation rate with increasing time. The oxidation rate of GeSn is higher than that of pure Ge, which can be explained by the higher chemical reaction rate at the GeSn-oxide/GeSn interface. In addition, the Sn atoms at the interface region exchange positions with the underlying Ge atoms during oxidation, leading to a SnO2-rich oxide near the interface. The bandgap of GeSn oxide is extracted to be 5.1 ± 0.2 eV by XPS, and the valence band offset at the GeSn-oxide/GeSn heterojunction is found to be 3.7 ± 0.2 eV. Controlled annealing experiments demonstrate that the GeSn oxide is stable with respect to annealing temperatures up to 400 °C. However, after annealing at 450 °C, the GeO2 is converted to GeO, and desorbs from the GeSn-oxide/GeSn, leaving behind Sn oxide.

  1. Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect

    OpenAIRE

    Yudi Darma

    2008-01-01

    Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter) have been prepared by controlling selective growth conditions of low-pressure chemical vapor deposition (LPCVD) on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth on Ge/Si dots. Compositional mixing and the crystallinity of Si dots with Ge core as a function of ...

  2. Framework 'interstitial' oxygen in La10(GeO4)5-(GeO5)O2 apatite electrolyte

    International Nuclear Information System (INIS)

    Pramana, S.S.; White, T.J.

    2007-01-01

    Oxygen conduction at low temperatures in apatites make these materials potentially useful as electrolytes in solid-oxide fuel cells, but our understanding of the defect structures enabling ion migration is incomplete. While conduction along [001] channels is dominant, considerable inter-tunnel mobility has been recognized. Using neutron powder diffraction of stoichiometric 'La 10 (GeO 4 ) 6 O 3 ', it has been shown that this compound is more correctly described as an La 10 (GeO 4 ) 5- (GeO 5 )O 2 apatite, in which high concentrations of interstitial oxygen reside within the channel walls. It is suggested that these framework interstitial O atoms provide a reservoir of ions that can migrate into the conducting channels of apatite, via a mechanism of inter-tunnel oxygen diffusion that transiently converts GeO 4 tetrahedra to GeO 5 distorted trigonal bipyramids. This structural modification is consistent with known crystal chemistry and may occur generally in oxide apatites. (orig.)

  3. Ion Beam Synthesis of Ge Nanowires. rev. ed.

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, T.

    2001-01-01

    The formation of Ge nanowires in V-grooves has been studied experimentally as well as theoretically. As substrate oxide covered Si V-grooves were used formed by anisotropic etching of (001)Si wafers and subsequent oxidation of their surface. Implantation of 1 x 10{sup 17} Ge{sup +}cm{sup -2} at 70 keV was carried out into the oxide layer covering the V-grooves. Ion irradiation induces shape changes of the V-grooves, which are captured in a novel continuum model of surface evolution. It describes theoretically the effects of sputtering, redeposition of sputtered atoms, and swelling. Thereby, the time evolution of the target surface is determined by a nonlinear integro-differential equation, which was solved numerically for the V-groove geometry. A very good agreement is achieved for the predicted surface shape and the shape observed in XTEM images. Surprisingly, the model predicts material (Si, O, Ge) transport into the V-groove bottom which also suggests an Ge accumulation there proven by STEM-EDX investigations. In this Ge rich bottom region, subsequent annealing in N{sub 2} atmosphere results in the formation of a nanowire by coalescence of Ge precipitates shown by XTEM images. The process of phase separation during the nanowire growth was studied by means of kinetic 3D lattice Monte-Carlo simulations. These simulations also indicate the disintegration of continuous wires into droplets mediated by thermal fluctuations. Energy considerations have identified a fragmentation threshold and a lower boundary for the droplet radii which were confirmed by the Monte Carlo simulation. The here given results indicate the possibility of achieving nanowires being several nanometers wide by further growth optimizations as well as chains of equally spaced clusters with nearly uniform diameter. (orig.)

  4. Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure

    International Nuclear Information System (INIS)

    Yan Wensheng; Li Zhongrui; Sun Zhihu; Wei Shiqiang; Kolobov, A. V.

    2007-01-01

    The formation mechanism of Ge nanocrystals for Ge (60 mol%) embedded in a SiO2 matrix grown on Si(001) and quartz-glass substrates was studied by fluorescence x-ray absorption fine structure (XAFS). It was found that the formation of Ge nanocrystals strongly depends on the properties of the substrate materials. In the as-prepared samples, Ge atoms exist in amorphous Ge and GeO2 phases. At the annealing temperature of 1073 K, on the quartz-glass substrate, Ge nanocrystals are only formed predominantly from the amorphous Ge phase in the as-prepared sample. However, on the Si(100) substrate the Ge nanocrystals are generated partly from amorphous Ge, and partly from GeO2 phases through the permutation reaction with Si substrate. Quantitative analysis revealed that about 10% of GeO2 in as-prepared sample permutated with Si in the wafer and formed Ge nanocrystals

  5. Reconstruction of GeV Neutrino Events in LENA

    International Nuclear Information System (INIS)

    Moellenberg, R.; Feilitzsch, F. von; Goeger-Neff, M.; Hellgartner, D.; Lewke, T.; Meindl, Q.; Oberauer, L.; Potzel, W.; Tippmann, M.; Winter, J.; Wurm, M.; Peltoniemi, J.

    2011-01-01

    LENA (Low Energy Neutrino Astronomy) is a proposed next generation liquid-scintillator detector with about 50 kt target mass. Besides the detection of solar neutrinos, geoneutrinos, supernova neutrinos and the search for the proton decay, LENA could also be used as the far detector of a next generation neutrino beam. The present contribution outlines the status of the Monte Carlo studies towards the reconstruction of GeV neutrinos in LENA. Both the tracking capabilities at a few hundred MeV, most interesting for a beta beam, and above 1 GeV for a superbeam experiment are presented.

  6. Superconductivity in ThPd2Ge2

    Science.gov (United States)

    Domieracki, Krzysztof; Wiśniewski, Piotr; Wochowski, Konrad; Romanova, Tetiana; Hackemer, Alicja; Gorzelniak, Roman; Pikul, Adam; Kaczorowski, Dariusz

    2018-05-01

    Our on-going search for unconventional superconductors among the ThTE2Ge2 phases (TE is a d-electron transition metal) revealed that ThPd2Ge2, which crystallizes with a body-centered tetragonal ThCr2Si2-type structure, exhibits superconductivity at low temperatures. In this paper, we report on the electrical transport and thermodynamic properties of a polycrystalline sample of this new superconductor, extended down to 50 mK. The experimental data indicates weakly-coupled type-II superconductivity with Tc = 0.63(2) K and μ0Hc2(0) = 32(2) mT.

  7. Description of the ternary system Cu-Ge-Te

    International Nuclear Information System (INIS)

    Dogguy, M.; Carcaly, C.; Rivet, J.; Flahaut, J.

    1977-01-01

    The Cu-Ge-Te ternary system has been studied by DTA and by crystallographic and metallographic analysis. The existence of a ternary compound Cu 2 GeTe 3 is demonstrated; this compound has a ternary incongruent melting point at 500 0 C. This ternary compound has a superstructure of a zinc blende type. The study shows the existence of five ternary eutectics. Two liquid-liquid miscibility gaps exist: the first is situated entirely in the ternary system; the second gives a monotectic region within the ternary system. (Auth.)

  8. Magnetoelastic behaviour of Gd sub 5 Ge sub 4

    CERN Document Server

    Magen, C; Algarabel, P A; Marquina, C; Ibarra, M R

    2003-01-01

    A complete investigation of the complex magnetic behaviour of Gd sub 5 Ge sub 4 by means of linear thermal expansion and magnetostriction measurements (5-300 K, 0-120 kOe) has been carried out. Our results support the suggested existence in this system of a coupled crystallographic-magnetic transition from a Gd sub 5 Ge sub 4 -type Pnma (antiferromagnetic) to a Gd sub 5 Si sub 4 -type Pnma (ferromagnetic) state. Strong magnetoelastic effects are observed at the field-induced first-order magnetic-martensitic transformation. A revised magnetic and crystallographic H- T phase diagram is proposed.

  9. Shaping Ge islands on Si(001) surfaces with misorientation angle.

    Science.gov (United States)

    Persichetti, L; Sgarlata, A; Fanfoni, M; Balzarotti, A

    2010-01-22

    A complete description of Ge growth on vicinal Si(001) surfaces in the angular miscut range 0 degrees -8 degrees is presented. The key role of substrate vicinality is clarified from the very early stages of Ge deposition up to the nucleation of 3D islands. By a systematic scanning tunneling microscopy investigation we are able to explain the competition between step-flow growth and 2D nucleation and the progressive elongation of the 3D islands along the miscut direction [110]. Using finite element calculations, we find a strict correlation between the morphological evolution and the energetic factors which govern the {105} faceting at atomic scale.

  10. Summary of the 70 GeV Booster Group

    International Nuclear Information System (INIS)

    Makdisi, Y.; Khiari, F.

    1985-06-01

    The energy range of the 70 GeV SSC booster makes it difficult to employ a single technique for preserving the beam polarization. Results of DEPOL calculations show that the expected resonance strengths are below the .5 x 10 -1 level, which poses no problem for resonance jumping. It was found that a single adiabatically energized Siberian snake will not significantly depolarize the beam. Thus one good solution to the mixing problem is that the snake magnets be energized during the acceleration cycle reaching maximum operating value at 20 GeV, where they take over the resonance jumping role. The possibility of adiabatically energizing two snakes was found to be feasible

  11. Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

    Science.gov (United States)

    Campbell, Gavin P.; Kiraly, Brian; Jacobberger, Robert M.; Mannix, Andrew J.; Arnold, Michael S.; Hersam, Mark C.; Guisinger, Nathan P.; Bedzyk, Michael J.

    2018-04-01

    Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 × 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.

  12. Optical response of Cu3Ge thin films

    OpenAIRE

    Aboelfotoh, M. O.; Guizzetti, G.; Marabelli, F.; Pellegrino, Paolo; Sassella, A.

    1996-01-01

    We report an investigation on the optical properties of Cu3Ge thin films displaying very high conductivity, with thickness ranging from 200 to 2000 Å, deposited on Ge substrates. Reflectance, transmittance, and ellipsometric spectroscopy measurements were performed at room temperature in the 0.01-6.0, 0.01-0.6, and 1.4-5.0 eV energy range, respectively. The complex dielectric function, the optical conductivity, the energy-loss function, and the effective charge density were obtained over the ...

  13. Formation of Si/Ge/Si heterostructures with quantum dots

    International Nuclear Information System (INIS)

    Zinov'ev, V.A.; Dvurechenskij, A.V.; Novikov, P.L.

    2003-01-01

    It is present the Monte Carlo simulation of epitaxial embedding of faceted three-dimensional Ge islands (quantum dots) in a Si matrix. Under a Si flux these islands expand and undergo a shape change (from pyramidal to drop-like shape). The main expansion occurs at initial stage of embedding in Si (deposition of 1-2 monolayers). This change is controlled by surface diffusion. The shape of island can be preserved when one uses the higher Si fluxes. The reason of island conservation lies in blocking of Ge surface diffusion [ru

  14. Substrate Effects in Wideband SiGe HBT Mixer Circuits

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

    2005-01-01

    are also applied to predict short distance substrate coupling effects. Simulation results using extracted equivalent circuit models and substrate coupling networks are compared with experimental results obtained on a wideband mixer circuit implemented in a 0.35 μm, 60 GHz ft SiGe HBT BiCMOS process.......In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations...

  15. Strained Si/SiGe MOS transistor model

    Directory of Open Access Journals (Sweden)

    Tatjana Pešić-Brđanin

    2009-06-01

    Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

  16. Heavy Ion Current Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, Robert A.; Vizkelethy, Gyorgy; McMorrow, Dale; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philipe; Duhanel, Olivier; Phillips, Stanley D.; Sutton, Akil K.; hide

    2009-01-01

    Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

  17. GaAs/Ge solar panels for the SAMPEX program

    Science.gov (United States)

    Dobson, Rodney; Kukulka, Jerry; Dakermanji, George; Roufberg, Lew; Ahmad, Anisa; Lyons, John

    1992-01-01

    GaAs based solar cells have been developed for spacecraft use for several years. However, acceptance and application of these cells for spacecraft missions has been slow because of their high cost and concerns about their integration onto solar panels. Spectrolab has now completed fabrication of solar panels with GaAs/Ge solar cells for a second space program. This paper will focus on the design, fabrication and test of GaAs/Ge solar panels for the Solar Anomalous and Magnetospheric Particle Explorer (SAMPEX) Program.

  18. Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: structure and optical properties

    Science.gov (United States)

    Volodin, V. A.; Cherkov, A. G.; Antonenko, A. Kh; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2017-07-01

    Ge(x)[SiO2](1-x) (0.1  ⩽  x  ⩽  0.4) films were deposited onto Si(0 0 1) or fused quartz substrates using co-evaporation of both Ge and SiO2 in high vacuum. Germanium nanocrystals were synthesized in the SiO2 matrix by furnace annealing of Ge x [SiO2](1-x) films with x  ⩾  0.2. According to electron microscopy and Raman spectroscopy data, the average size of the nanocrystals depends weakly on the annealing temperature (700, 800, or 900 °C) and on the Ge concentration in the films. Neither amorphous Ge clusters nor Ge nanocrystals were observed in as-deposited and annealed Ge0.1[SiO2]0.9 films. Infrared absorption spectroscopy measurements show that the studied films do not contain a noticeable amount of GeO x clusters. After annealing at 900 °C intermixing of germanium and silicon atoms was still negligible thus preventing the formation of GeSi nanocrystals. For annealed samples, we report the observation of infrared photoluminescence at low temperatures, which can be explained by exciton recombination in Ge nanocrystals. Moreover, we report strong photoluminescence in the visible range at room temperature, which is certainly due to Ge-related defect-induced radiative transitions.

  19. 70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

    Energy Technology Data Exchange (ETDEWEB)

    Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2015-02-23

    Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

  20. Density functional study of the decomposition pathways of SiH₃ and GeH₃ at the Si(100) and Ge(100) surfaces.

    Science.gov (United States)

    Ceriotti, M; Montalenti, F; Bernasconi, M

    2012-03-14

    By means of first-principles calculations we studied the decomposition pathways of SiH₃ on Ge(100) and of GeH₃ on Si(100), of interest for the growth of crystalline SiGe alloys and Si/Ge heterostructures by plasma-enhanced chemical vapor deposition. We also investigated H desorption via reaction of two adsorbed SiH₂/GeH₂ species (β₂ reaction) or via Eley-Rideal abstraction of surface H atoms from the impinging SiH₃ and GeH₃ species. The calculated activation energies for the different processes suggest that the rate-limiting step for the growth of Si/Ge systems is still the β₂ reaction of two SiH₂ as in the growth of crystalline Si.

  1. Effect of Yi-nao-jie-yu decoction on γ-aminobutyric acid type A receptor in the hippocampus and serum inflammatory factors in a rat model of poststroke anxiety

    Directory of Open Access Journals (Sweden)

    Zhang W

    2016-11-01

    Full Text Available Wen Zhang,1 Ruizhen Zhao,1 Xiaoli Li,1 Xia Cui,1 Zijun Zhao,1 Yingqiu Mao,2 Fengzhi Wu,3 Qisheng Tang1 1Department of Encephalopathy, The Third Affiliated Hospital, 2Center of Scientific Research, 3Center of Journals, Beijing University of Chinese Medicine, Chaoyang District, Beijing, People’s Republic of China Background: The Yi-nao-jie-yu decoction (YNJYD is a herbal preparation widely used in the clinics of traditional Chinese medicine and has been recently used as an important new therapeutic agent in poststroke anxiety (PSA. The neuroendocrine–immune system plays an important role in PSA mechanisms, although the modulating effects of YNJYD remain unknown. This study investigated the potential effects of YNJYD on the neuroendocrine–immune system in a rat model of PSA.Materials and methods: The PSA model was induced by injecting collagenase (type VII into the right globus pallidus, accompanied by empty water bottle stimulation for 2 weeks. The sham group and the PSA model group were gavaged with saline, while the treatment groups received buspirone (BuSpar or YNJYD. Behavior was evaluated with the open field test and elevated plus maze once a week. Pathological changes were observed by hematoxylin and eosin staining. Serum levels of tumor necrosis factor, interleukin (IL-6, adrenocorticotropic hormone, thyroid stimulating hormone, free triiodothyronine, free thyroxine, IL-1α, and cortisol were detected by radioimmunoassay. Expression of the γ-aminobutyric acid type A receptor (GABAAR α2 subunit was examined by Western blot and real-time polymerase chain reaction.Results: YNJYD-treated rats exhibited significantly better recovery than BuSpar-treated rats at 21 days and 28 days in the open field test and elevated plus maze. Hematoxylin and eosin staining revealed neural repair in the hippocampus in the treatment groups. Serum levels of IL-1α in the YNJYD group were significantly less than those in the model group and the Bu

  2. Multichannel time-analyser with an electrostatic memory tube; Analyseur en temps a plusieurs canaux, avec memoire a potentioscopes; Mnogokanal'nye vremennye analizatory s pamyat'yu na potentsialoskopakh; Analizador multicanal de tiempo con tubo de memoria electrostatico

    Energy Technology Data Exchange (ETDEWEB)

    Ignat' ev, K G; Kirpichnikov, I V; Sukhoruchkin, S I

    1962-04-15

    forma de graficos y de datos numericos en fichas perforadas. (author) [Russian] V ITEHF AN SSSR byli so z d a ny dva mnogokanal'nykh vremennykh analizatora impul'sov s ''pamyat'yu'' na potentsialoskopakh JIH-4. V nastoyashchee vremya oni ISPOL'ZUYUTSYA V razlichnykh izmereniyakh i imeyut sleduyushchie kharakteristiki: chislo kanalov - 1024 i 2048; vremennaya shirina kanalov ot 0,2 mksek. i bol'she; emkost' kanalov - 4096 imp i 1024 imp; chastota zapuska analizatoroa do 1000 raz v sek; velichina zagruzki do 1000 imp/sek. Rezul'taty izmerenij vydayutsya analizatorami v vide grafikov i chislovykh dannykh na perfokartakh. (author)

  3. Effect of XingPiJieYu decoction on spatial learning and memory and cAMP-PKA-CREB-BDNF pathway in rat model of depression through chronic unpredictable stress.

    Science.gov (United States)

    Wang, Chunye; Guo, Jianyou; Guo, Rongjuan

    2017-01-24

    Depression is a mental disorder characterized by a pervasive low mood and loss of pleasure or interest in usual activities, and often results in cognitive dysfunction. The disturbance of cognitive processes associated with depression, especially the impairment of learning and memory, exacerbates illness and increases recurrence of depression. XingPiJieYu (XPJY) is one of the most widely clinical formulas of traditional Chinese medicine (TCM) and can improve the symptoms of depression, including learning and memory. However, its regulatory effects haven't been comprehensively studied so far. Recently, some animal tests have indicated that the cyclic adenosine monophosphate (cAMP)-protein kinase A (PKA)-cAMP response element-binding protein (CREB)-brain derived neurotrophic factor (BDNF) signaling pathway in hippocampus is closely related to depression and the pathogenesis of cognitive function impairments. The present study was performed to investigate the effect and mechanism of XPJY on depression and learning and memory in animal model. The rat model of depression was established by chronic unpredictable stress (CUS) for 21 days. The rats were randomly divided into six groups: control group, CUS group, CUS + XPJY (1.4 g/kg, 0.7 g/kg and 0.35 g/kg) groups, and CUS + sertraline (10 mg/kg) group. The sucrose preference, open field exploration and Morris water maze (MWM) were tested. The expression of cAMP, CREB, PKA and BDNF protein in hippocampus was examined with Elisa and Western Blot. The mRNA level of CREB and BDNF in hippocampus was measured with PCR. The results demonstrated that rats subjected to CUS exhibited decreases in sucrose preference, total ambulation, percentage of central ambulation, rearing in the open field test and spatial performance in the MWM. CUS reduced the expression of cAMP, PKA, CREB and BDNF in hippocampus of model rats. These effects could be reversed by XPJY. The results indicated that XPJY can improve depression and

  4. Growth of crystallized Ge films from VHF inductively-coupled plasma of H2-diluted GeH4

    International Nuclear Information System (INIS)

    Sakata, T.; Makihara, K.; Murakami, H.; Higashi, S.; Miyazaki, S.

    2007-01-01

    We have studied the Ge crystalline nucleation and film growth on quartz substrate at 250 deg. C from inductively-coupled plasma (ICP) of GeH 4 diluted with H 2 . The ICP was generated by supplying 60 MHz power to an external single-turn antenna which was placed on a quartz plate window of a stainless steel reactor and parallel to the substrate. We have found that the growth rate is significantly increased when the preferential growth of the (110) plane becomes pronounced after the formation of randomly-oriented crystalline network. The (110) oriented Ge films, of which average crystallinity is as high as 70%. The integrated intensity ratio of TO phonons in crystalline phase to those in disordered phase, were grown at a rate of ∼ 4.0 nm/s after the formation of amorphous incubation layer with a thickness of ∼ 0.1 μm on quartz

  5. Giant magnetocaloric effect in isostructural MnNiGe-CoNiGe system by establishing a Curie-temperature window

    KAUST Repository

    Liu, E. K.

    2013-03-28

    An effective scheme of isostructural alloying was applied to establish a Curie-temperature window in isostructural MnNiGe-CoNiGe system. With the simultaneous accomplishment of decreasing structural-transition temperature and converting antiferromagnetic martensite to ferromagnetic state, a 200 K Curie-temperature window was established between Curie temperatures of austenite and martensite phases. In the window, a first-order magnetostructural transition between paramagnetic austenite and ferromagnetic martensite occurs with a sharp jump in magnetization, showing a magnetic entropy change as large as −40 J kg−1 K−1 in a 50 kOe field change. This giant magnetocaloric effect enables Mn1− x Co x NiGe to become a potential magnetic refrigerant.

  6. Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.; Takenaka, M.; Takagi, S. [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and JST-CREST, K' s Gobancho 6F, 7 Gobancho, Chiyoda-ku, Tokyo 102-0076 (Japan)

    2016-07-18

    The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locate in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.

  7. Stellar Laboratories: New GeV and Ge VI Oscillator Strengths and their Validation in the Hot White Dwarf RE0503-289

    Science.gov (United States)

    Rauch, T.; Werner, K.; Biemont, E.; Quinet, P.; Kruk, J. W.

    2013-01-01

    State-of-the-art spectral analysis of hot stars by means of non-LTE model-atmosphere techniques has arrived at a high level of sophistication. The analysis of high-resolution and high-S/N spectra, however, is strongly restricted by the lack of reliable atomic data for highly ionized species from intermediate-mass metals to trans-iron elements. Especially data for the latter has only been sparsely calculated. Many of their lines are identified in spectra of extremely hot, hydrogen-deficient post-AGB stars. A reliable determination of their abundances establishes crucial constraints for AGB nucleosynthesis simulations and, thus, for stellar evolutionary theory. Aims. In a previous analysis of the UV spectrum of RE 0503-289, spectral lines of highly ionized Ga, Ge, As, Se, Kr, Mo, Sn, Te, I, and Xe were identified. Individual abundance determinations are hampered by the lack of reliable oscillator strengths. Most of these identified lines stem from Ge V. In addition, we identified Ge VI lines for the first time. We calculated Ge V and Ge VI oscillator strengths in order to reproduce the observed spectrum. Methods. We newly calculated Ge V and Ge VI oscillator strengths to consider their radiative and collisional bound-bound transitions in detail in our non-LTE stellar-atmosphere models for the analysis of the Ge IV-VI spectrum exhibited in high-resolution and high-S/N FUV (FUSE) and UV (ORFEUS/BEFS, IUE) observations of RE 0503-289. Results. In the UV spectrum of RE 0503-289, we identify four Ge IV, 37 Ge V, and seven Ge VI lines. Most of these lines are identified for the first time in any star. We can reproduce almost all Ge IV, GeV, and Ge VI lines in the observed spectrum of RE 0503-289 (T(sub eff) = 70 kK, log g = 7.5) at log Ge = -3.8 +/- 0.3 (mass fraction, about 650 times solar). The Ge IV/V/VI ionization equilibrium, that is a very sensitive T(sub eff) indicator, is reproduced well. Conclusions. Reliable measurements and calculations of atomic data are a

  8. Structural, electronic and optical characteristics of SrGe{sub 2} and BaGe{sub 2}: A combined experimental and computational study

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Mukesh, E-mail: mkgarg79@gmail.com [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Umezawa, Naoto [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Imai, Motoharu [Superconducting Properties Unit, National Institute for Materials Science, Ibaraki 305-0047 (Japan)

    2015-05-05

    Highlights: • Charge transfer between cation and anion atoms observed first time in digermandies. • Study yields a band gap of ∼1 eV and ∼0.85 eV for SrGe{sub 2} and BaGe{sub 2}, respectively. • Band gap decrease with the application of hydrostatic pressure. • Localized cation d states lead to a large absorption coefficient (>7.5 × 10{sup 4} cm{sup −1}). - Abstract: SrGe{sub 2} and BaGe{sub 2} were characterized for structural, electronic and optical properties by means of diffuse reflectance and first-principles density functional theory. These two germanides crystallize in the BaSi{sub 2}-type structure, in which Ge atoms are arranged in tetrahedral configuration. The calculation indicates a charge transfer from Sr (or Ba) atoms to Ge atoms along with the formation of covalent bonds among Ge atoms in Ge tetrahedral. The computational results confirm that these two germanies are Zintl phase described as Sr{sub 2}Ge{sub 4} (or Ba{sub 2}Ge{sub 4}), which are characterized by positively charged [Sr{sub 2} (or Ba{sub 2})]{sup 2.59+} and negatively charged [Ge{sub 4}]{sup 2.59−} units acting as cation and anion, respectively. These compounds are indirect gap semiconductors with band gap estimated to be E{sub g} = 1.02 eV for BaGe{sub 2} and E{sub g} = 0.89 eV for SrGe{sub 2} which are in good agreement with our experimental measured values (E{sub g} = 0.97 eV for BaGe{sub 2} and E{sub g} = 0.82 eV for SrGe{sub 2}). Our calculations demonstrate that the band gaps are narrowed by application of hydrostatic pressure; the pressure coefficients are estimated to be −10.54 for SrGe{sub 2} and −10.06 meV/GPa for BaGe{sub 2}. Optical properties reveal that these compounds have large absorption coefficient (∼7.5 × 10{sup 4} cm{sup −1} at 1.5 eV) and the estimated high frequency (static) dielectric constant are, ε{sub ∞}(ε{sub 0}) ≈ 12.8(20.97) for BaGe{sub 2} and ε{sub ∞}(ε{sub 0}) ≈ 14.27(22.87) for SrGe{sub 2}.

  9. Optical and structural investigations of self-assembled Ge/Si bi-layer containing Ge QDs

    Energy Technology Data Exchange (ETDEWEB)

    Samavati, Alireza, E-mail: alireza.samavati@yahoo.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Othaman, Z., E-mail: zulothaman@gmail.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Ghoshal, S.K.; Dousti, M.R. [Advanced Optical Material Research Group, Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia)

    2014-10-15

    We report the influence of Si spacer thickness variation (10–40 nm) on structural and optical properties of Ge quantum dots (QDs) in Ge/Si(1 0 0) bi-layer grown by radio frequency magnetron sputtering. AFM images reveal the spacer dependent width, height, root mean square roughness and number density of QDs vary in the range of ∼12–25 nm, ∼2–6 nm, ∼1.95–1.05 nm and ∼0.55×10{sup 11}–2.1×10{sup 11} cm{sup −2}, respectively. XRD patterns exhibit the presence of poly-oriented structures of Ge with preferred growth along (1 1 1) direction accompanied by a reduction in strain from 4.9% to 1.2% (estimated from Williamson–Hall plot) due to bi-layering. The room temperature luminescence displays strong blue–violet peak associated with a blue shift as much as 0.05 eV upon increasing the thickness of Si spacer. This shift is attributed to the quantum size effect, the material intermixing and the strain mediation. Raman spectra for both mono and bi-layer samples show intense Ge–Ge optical phonon mode that is shifted towards higher frequency. Furthermore, the first order features of Raman spectra affirm the occurrence of interfacial intermixing and phase formation during deposition. The excellent features of the results suggest that our systematic method may constitute a basis for the tunable growth of Ge QDs suitable in nanophotonics. - Highlights: • High quality bilayered hetero-structure Ge/Si using economic and easy rf magnetron sputtering fabrication method. • The role of phonon-confinement and strain relaxation mechanisms. • Influence of bilayering on evolutionary growth dynamics. • Band gap shift of visible PL upon bilayering.

  10. Wang Haili, The History of Egypt

    Institute of Scientific and Technical Information of China (English)

    Han Jianwei[1

    2015-01-01

    The History of Egypt is the first monograph on Egyptian history written by a single Chinese author. As a comprehensive study both in Egyptology and in Egyptian history, it represents a new level of Egyptian historical research in Chinese academia.

  11. DONG JIE Zhang, LIANG Wang, ZHON

    Indian Academy of Sciences (India)

    User

    development, hairless nude skin, and short life (Abitbol et al., 2015; Bryson et al., 2013). On the ... Foxn1 maintains TECs to support T-cell development via mcm2 ... were ligated upstream of the firefly luciferase gene in the plasmid pGL3-Basic.

  12. High spin levels in 66Ga, 68Ga, 70Ga and 68Ge, 70Ge, 72Ge via fusion evaporation reactions induced by α-particles

    International Nuclear Information System (INIS)

    Morand, C.

    1979-01-01

    The high spin (J 70 Ga all the members (except the 3 - one) of the (πpsub(3/2), νgsub(9/2)) configuration have been identified, in addition with the (πfsub(5/2), νgsub(9/2))sub(7 - ) and (πgsub(9/2), νgsub(9/2))sub(9 + ) states. In 66 Ga and 68 Ga most of the levels with J>7 ca be described as a result of maximum coupling of a gsub(9/2) neutron with the odd Ga core. Thus the (πgsub(9/2), νgsub(9/2))sub(9 + ) states have been safely located. In the same way the even Ge, the backbending effect at the Jsup(π)=8 + state is less and less pronouced from the 68 Ge to the 72 Ge; that can be explained by the (νgsub(9/2)) 2 sub(8 + ) configuration of this state, so that the 8 + →6 + γ-transition is more and more allowed with increasing N, i.e. as the νgsub(9/2) shell acts more and more in the lower yrast levels Jsup(π)=0 + , 2 + , 4 + , 6 + configurations [fr

  13. Pressure-induced antiferromagnetic superconductivity in CeNiGe3: A Ge73-NQR study under pressure

    International Nuclear Information System (INIS)

    Harada, A.; Kawasaki, S.; Mukuda, H.; Kitaoka, Y.; Thamizhavel, A.; Okuda, Y.; Settai, R.; Onuki, Y.; Itoh, K.M.; Haller, E.E.; Harima, H.

    2007-01-01

    We report on antiferromagnetic (AF) properties of pressure-induced superconductivity in CeNiGe 3 via the Ge73 nuclear-quadrupole-resonance (NQR) measurements under pressure (P). The NQR-spectrum measurements have revealed that the incommensurate antiferromagnetic ordering is robust against increasing P with the increase of ordered moment and ordering temperature. Nevertheless the measurements of nuclear spin-lattice relaxation rate (1/T 1 ) have pointed to the onset of superconductivity as a consequence of Ce-4f electrons delocalized by applying P. The emergence of superconductivity under the development of AF order suggests that a novel type of superconducting mechanism works in this compound

  14. The Ho–Ni–Ge system: Isothermal section and new rare-earth nickel germanides

    Energy Technology Data Exchange (ETDEWEB)

    Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Knotko, A.V. [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Faculty of Geology, Moscow State University, Leninskie Gory, Moscow 119992 (Russian Federation); Yuan, Fang; Mozharivskyj, Y. [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1 (Canada); Pani, M.; Provino, A.; Manfrinetti, P. [Institute SPIN-CNR and Dipartimento di Chimica e Chimica Industriale, Università di Genova, Via Dodecaneso 31, 16146 Genova (Italy)

    2015-05-15

    The Ho–Ni–Ge system has been investigated at 1070 K and up to ~60 at% Ho by X-ray diffraction and microprobe analyses. Besides the eight known compounds, HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type), HoNi{sub 2}Ge{sub 2} (CeAl{sub 2}Ga{sub 2}-type), Ho{sub 2}NiGe{sub 6} (Ce{sub 2}CuGe{sub 6}-type), HoNiGe{sub 3} (SmNiGe{sub 3}-type), HoNi{sub 0.2÷0.6}Ge{sub 2} (CeNiSi{sub 2}-type), Ho{sub 37÷34}Ni{sub 6÷24}Ge{sub 57÷42} (AlB{sub 2}-type), HoNiGe (TiNiSi-type), Ho{sub 3}NiGe{sub 2} (La{sub 3}NiGe{sub 2}-type), the ternary system contains four new compounds: Ho{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type), HoNi{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Ho{sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) and ~Ho{sub 5}Ni{sub 2}Ge{sub 3} (unknown structure). Quasi-binary solid solutions were observed at 1070 K for Ho{sub 2}Ni{sub 17}, HoNi{sub 5}, HoNi{sub 7}, HoNi{sub 3}, HoNi{sub 2}, HoNi and Ho{sub 2}Ge{sub 3}, but no detectable solubility was found for the other binary compounds in the Ho–Ni–Ge system. Based on the magnetization measurements, the HoNi{sub 5}Ge{sub 3}, HoNi{sub 3}Ge{sub 2} and Ho{sub 3}Ni{sub 11}Ge{sub 4} (and isostructural (Tb, Dy){sub 3}Ni{sub 11}Ge{sub 4}) compounds have been found to show paramagnetic behavior down to 5 K, whereas Ho{sub 3}Ni{sub 2}Ge{sub 3} exhibits an antiferromagnetic transition at ~7 K. Additionally, the crystal structure of the new isostructural phases (Y, Yb)Ni{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Er{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type) and (Y, Tb, Dy, Er, Tm){sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) has been also investigated. - Graphical abstract: The Ho–Ni–Ge system has been investigated at 1070 K and up to ~60 at.% Ho by X-ray and microprobe analyses. Besides the eight known compounds, i.e. HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type), HoNi{sub 2}Ge{sub 2} (CeAl{sub 2}Ga{sub 2}-type), Ho{sub 2}NiGe{sub 6} (Ce{sub 2

  15. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J. [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Wang, Y. Q., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Ross, G. G.; Barba, D., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [INRS-Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes Québec J3X 1S2 (Canada)

    2014-05-28

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150 °C for 1 h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301 kJ·mol{sup −1}) are greater than that of Ge-Ge bonds (264 kJ·mol{sup −1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  16. Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy.

    Science.gov (United States)

    Bollani, Monica; Chrastina, Daniel; Montuori, Valeria; Terziotti, Daniela; Bonera, Emiliano; Vanacore, Giovanni M; Tagliaferri, Alberto; Sordan, Roman; Spinella, Corrado; Nicotra, Giuseppe

    2012-02-03

    The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe.

  17. Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy

    International Nuclear Information System (INIS)

    Bollani, Monica; Chrastina, Daniel; Montuori, Valeria; Vanacore, Giovanni M; Tagliaferri, Alberto; Sordan, Roman; Terziotti, Daniela; Bonera, Emiliano; Spinella, Corrado; Nicotra, Giuseppe

    2012-01-01

    The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe. (paper)

  18. Local structural environments of Ge doped in eutectic Sb-Te film before and after crystallization

    Science.gov (United States)

    Shin, Sang Yeol; Cheong, Byung-ki; Choi, Yong Gyu

    2018-06-01

    Electrical phase change device using the Ge-doped eutectic Sb-Te (e.g., Ge1Sb8Te2) film is known to exhibit improved energy efficiency thanks to lowered threshold voltage as well as decreased power consumption for the reset operation, as compared with Ge2Sb2Te5 film. Ge K-edge EXAFS analysis is employed in this study in an effort to elucidate such merits of Ge1Sb8Te2 film in connection with its local atomic arrangements. It is then verified that a Ge atom is four-fold coordinated in its nearest-neighboring shell both in the as-deposited and in the annealed films. It needs to be highlighted that approximately two Sb atoms constitute the Ge tetrahedral units in its amorphous state; however, after being crystallized, heteropolar Ge-Sb bonds hardly exist in this Ge1Sb8Te2 film. It has been known that crystallization temperature and activation energy for crystallization of this Ge1Sb8Te2 composition are greater than those of Ge2Sb2Te5 composition. In addition, these two phase change materials exhibit distinctly different crystallization mechanisms, i.e., nucleation-dominant for Ge2Sb2Te5 film but growth-dominant for Ge1Sb8Te2 film. These discrepancies in the crystallization-related properties are delineated in terms of the local structural changes verified from the present EXAFS analysis.

  19. XML Schema of PaGE-OM: fuge.xsd [

    Lifescience Database Archive (English)

    Full Text Available ://www.omg.org/spec/PAGE-OM/20090722/snp schemaLocation=snp.xsd/> ..._source type=fuge:Ontology_source/> _source> ...ogy_term/> _term> Ontology term, defined in more detail in FuGE (http://fuge.sourceforge.net/). This

  20. GeV Detection of HESS J0632+057

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jian; Torres, Diego F.; Wilhelmi, Emma de Oña [Institute of Space Sciences (CSIC–IEEC), Campus UAB, Carrer de Magrans s/n, E-08193 Barcelona (Spain); Cheng, K.-S. [Department of Physics, University of Hong Kong, Pokfulam Road, Hong Kong (China); Kretschmar, Peter [European Space Astronomy Centre (ESA/ESAC), Science Operations Department, Villanueva de la Cañada (Madrid) (Spain); Hou, Xian [Yunnan Observatories, Chinese Academy of Sciences, 396 Yangfangwang, Guandu District, Kunming 650216 (China); Takata, Jumpei, E-mail: jian@ice.csic.es [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2017-09-10

    HESS J0632+057 is the only gamma-ray binary that has been detected at TeV energies, but not at GeV energies yet. Based on nearly nine years of Fermi Large Area Telescope (LAT) Pass 8 data, we report here on a deep search for the gamma-ray emission from HESS J0632+057 in the 0.1–300 GeV energy range. We find a previously unknown gamma-ray source, Fermi J0632.6+0548, spatially coincident with HESS J0632+057. The measured flux of Fermi J0632.6+0548 is consistent with the previous flux upper limit on HESS J0632+057 and shows variability that can be related to the HESS J0632+057 orbital phase. We propose that Fermi J0632.6+0548 is the GeV counterpart of HESS J0632+057. Considering the Very High Energy spectrum of HESS J0632+057, a possible spectral turnover above 10 GeV may exist in Fermi J0632.6+0548, as appears to be common in other established gamma-ray binaries.

  1. 12 GeV detector technology at Jefferson Lab

    Energy Technology Data Exchange (ETDEWEB)

    Leckey, John P. [Indiana University, Bloomington, IN 47405 (United States); Collaboration: GlueX Collaboration

    2013-04-19

    The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

  2. Metal Induced Gap States on Pt/Ge(001)

    NARCIS (Netherlands)

    Oncel, N.; van Beek, W.J.; Poelsema, Bene; Zandvliet, Henricus J.W.

    2007-01-01

    Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) we have studied the electronic properties of a novel, planar, metal semiconductor contact. For this purpose we take advantage of the unique properties of the Pt-modified Ge(001) surface, which consist of coexisting

  3. Effect of pressure on magnetism of UIrGe

    International Nuclear Information System (INIS)

    Pospíšil, Jiří; Haga, Yoshinori; Tateiwa, Naoyuki; Kambe, Shinsaku; Yamamoto, Etsuji; Gouchi, Jun; Uwatoko, Yoshiya; Nagasaki, Shoko; Honda, Fuminori; Homma, Yoshiya

    2017-01-01

    We report the effect of hydrostatic pressure on the electronic state of the antiferromagnet UIrGe, which is isostructural and isoelectronic with the ferromagnetic superconductors UCoGe and URhGe. A series of electrical resistivity measurements in a piston–cylinder-type cell and a cubic-anvil cell were performed at hydrostatic pressures up to 15 GPa. The Néel temperature decreases with increasing pressure. We constructed a p–T phase diagram and estimated the critical pressure p_c, where the antiferromagnetism vanishes, as ∼12 GPa. The antiferromagnetic/paramagnetic transition appears to be first order. We suggest a scenario of competing antiferromagnetic inter-J- and ferromagnetic intra-J*-chain interactions in UIrGe. A moderate increase in the effective electron mass was detected in the vicinity of p_c. A discussion of the electronic specific heat γ and electron–electron correlation term A using the Kadowaki–Woods relation is given. (author)

  4. USA hiiglane GE Healthcare korraldab meditsiinis revolutsiooni / Andrew Jack

    Index Scriptorium Estoniae

    Jack, Andrew

    2006-01-01

    General Electricu tütarettevõte GE Healthcare võttis üle Briti diagnostika- ja bioteaduse uurimisfirma Amersham, firma strateegia tuum on võimsa skaneerimistehnoloogia ja meditsiinilise diagnostika üksteisele lähendamine. Lisa: Aeg sorteerida andmeid infotehnoloogia abil

  5. High-field magnetization of UCuGe single crystal

    Czech Academy of Sciences Publication Activity Database

    Andreev, Alexander V.; Mushnikov, N. V.; Gozo, T.; Honda, F.; Sechovský, V.; Prokeš, K.

    346-347, - (2004), s. 132-136 ISSN 0921-4526 R&D Projects: GA ČR GA202/02/0739 Institutional research plan: CEZ:AV0Z1010914 Keywords : uranium intermetallics * UCuGe * high fields * magnetic anisotropy * field-induced phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.679, year: 2004

  6. Thermal expansion of the superconducting ferromagnet UCoGe

    NARCIS (Netherlands)

    Gasparini, A.; Huang, Y.K.; Hartbaum, J.; v. Löhneysen, H.; de Visser, A.

    2010-01-01

    We report measurements of the coefficient of linear thermal expansion, α(T), of the superconducting ferromagnet UCoGe. The data taken on a single-crystalline sample along the orthorhombic crystal axes reveal a pronounced anisotropy with the largest length changes along the b axis. The large values

  7. Oblique roughness replication in strained SiGe/Si multilayers

    NARCIS (Netherlands)

    Holy, V.; Darhuber, A.A.; Stangl, J.; Bauer, G.; Nützel, J.-F.; Abstreiter, G.

    1998-01-01

    The replication of the interface roughness in SiGe/Si multilayers grown on miscut Si(001) substrates has been studied by means of x-ray reflectivity reciprocal space mapping. The interface profiles were found to be highly correlated and the direction of the maximal replication was inclined with

  8. Fabrication of Cu(x)Ge(y) Nanoplatelets

    Czech Academy of Sciences Publication Activity Database

    Křenek, T.; Fajgar, Radek; Medlín, R.; Klementová, Mariana; Novotný, F.; Dřínek, Vladislav

    2011-01-01

    Roč. 11, č. 9 (2011), s. 8279-8283 ISSN 1533-4880. [EuroCVD-18. Kinsale, 04.09.2011-09.09.2011] Institutional research plan: CEZ:AV0Z40720504; CEZ:AV0Z40320502 Keywords : CuGe * alloy * nanoplatelet Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.563, year: 2011

  9. 7-GeV Advanced Photon Source Conceptual Design Report

    International Nuclear Information System (INIS)

    1987-04-01

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV

  10. Injection error monitor for KEK 12 GeV PS

    International Nuclear Information System (INIS)

    Shirakata, Masashi; Sato, Hikaru; Toyama, Takeshi; Marutsuka, Katsumi.

    1994-01-01

    The injection error monitor is now developing for an easy tuning of the main ring beam injection at the KEK 12 GeV proton synchrotron. The beam trajectory on the horizontal phase space plane is obtained by a test bench system. The injection error monitor proved to be available for the beam injection tuning. (author)

  11. The structure of collective bands in 72Ge

    International Nuclear Information System (INIS)

    Tripathy, K.C.; Sahu, R.

    1999-01-01

    In recent years, extensive experimental studies of nuclei in the mass region A=80 have led to exciting discoveries of large ground state deformations, coexistence of shapes, band crossings, rapid variations of structure with changing nucleon numbers etc. A theoretical study of 72 Ge is presented

  12. Antilocalization of Coulomb Blockade in a Ge-Si Nanowire

    DEFF Research Database (Denmark)

    Higginbotham, Andrew P.; Kuemmeth, Ferdinand; Larsen, Thorvald Wadum

    2014-01-01

    The distribution of Coulomb blockade peak heights as a function of magnetic field is investigated experimentally in a Ge-Si nanowire quantum dot. Strong spin-orbit coupling in this hole-gas system leads to antilocalization of Coulomb blockade peaks, consistent with theory. In particular, the peak...

  13. Sputtering of Ge(001): transition between dynamic scaling regimes

    DEFF Research Database (Denmark)

    Smilgies, D.-M.; Eng, P.J.; Landemark, E.

    1997-01-01

    We have studied the dynamic behavior of the Ge(001) surface during sputtering in situ and in real time using synchrotron X-ray diffraction. We find two dynamic regimes as a function of surface temperature and sputter current which are separated by a sharp transition. The boundary between these two...

  14. Synthesis and characterization of germanium monosulphide (GeS)

    Indian Academy of Sciences (India)

    This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) ...

  15. GE NANOCLUSTERS IN PLANAR GLASS WAVEGUIDES DEPOSITED BY PECVD

    DEFF Research Database (Denmark)

    Haiyan, Ou; Olsen, Johnny H.; Rottwitt, Karsten

    2004-01-01

    Germanium (Ge) has been widely used as the dopant in the core layer of planar glass waveguides to increase the refractive index because it gives a small propagation loss. Plasma enhanced chemical vapour deposition (PECVD) and flame hydrolysis deposition (FHD) are two main material deposition meth...

  16. CMS event at 900 GeV - 5 May 2015

    CERN Document Server

    CMS, Collaboration

    2015-01-01

    This proton collision di-jet event was detected at the CMS detector. The red bars represent the energy deposited in the electromagnetic calorimeter and the blue represent the energy in the hadronic calorimeter. The total hadronic and electromagnetic energy is approximately 30 GeV in each jet. The back-to-back jet cones can be clearly seen emanating from the vertex.

  17. GeV C.W. electron microtron design report

    International Nuclear Information System (INIS)

    1982-05-01

    Rising interest in the nuclear physics community in a GeV C.W. electron accelerator reflects the growing importance of high-resolution short-range nuclear physics to future advances in the field. In this report major current problems are reviewed and the details of prospective measurements which could be made with a GeV C.W. electron facility are discussed, together with their impact on an understanding of nuclear forces and the structure of nuclear matter. The microtron accelerator has been chosen as the technology to generate the electron beams required for the research discussed because of the advantages of superior beam quality, low capital and operating cost and capability of furnishing beams of several energies and intensities simultaneously. A complete technical description of the conceptual design for a 2 GeV double-sided C.W. electron microtron is presented. The accelerator can furnish three beams with independently controlled energy and intensity. The maximum current per beam is 100 μamps. Although the precise objective for maximum beam energy is still a subject of debate, the design developed in this study provides the base technology for microtron accelerators at higher energies (2 to 6 GeV) using multi-sided geometries

  18. GeSn Based Near and Mid Infrared Heterostructure Detectors

    Science.gov (United States)

    2018-02-07

    prestigious journals. 15.  SUBJECT TERMS Plasmonic Enhancement, Metal Nanostructures, CMOS, Photodetectors, Germanium-Tin Diode, IR Focal Plane Array...following features: (1) ease of manufacture in a foundry via a simple epitaxial structure, (2) end- fire coupling into on-chip transparent Ge or Si

  19. GeV C. W. electron microtron design report

    Energy Technology Data Exchange (ETDEWEB)

    1982-05-01

    Rising interest in the nuclear physics community in a GeV C.W. electron accelerator reflects the growing importance of high-resolution short-range nuclear physics to future advances in the field. In this report major current problems are reviewed and the details of prospective measurements which could be made with a GeV C.W. electron facility are discussed, together with their impact on an understanding of nuclear forces and the structure of nuclear matter. The microtron accelerator has been chosen as the technology to generate the electron beams required for the research discussed because of the advantages of superior beam quality, low capital and operating cost and capability of furnishing beams of several energies and intensities simultaneously. A complete technical description of the conceptual design for a 2 GeV double-sided C.W. electron microtron is presented. The accelerator can furnish three beams with independently controlled energy and intensity. The maximum current per beam is 100 ..mu..amps. Although the precise objective for maximum beam energy is still a subject of debate, the design developed in this study provides the base technology for microtron accelerators at higher energies (2 to 6 GeV) using multi-sided geometries.

  20. Self-assembled growth of nanostructural Ge islands on bromine ...

    Indian Academy of Sciences (India)

    bromine-passivated Si(111) surfaces at room temperature. AMAL K DAS1 ... Both the islands and the layer are nanocrystalline. This appears ..... coworkers estimated an activation energy of 0.59 ±0.1 eV for Ge diffusion on Si(100) and 0.45 eV ...