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Sample records for wang ge yu

  1. Honggang Wang

    Indian Academy of Sciences (India)

    Honggang Wang. Articles written in Journal of Genetics. Volume 90 Issue 3 December 2011 pp 409-425 Research Article. Wheat kernel dimensions: how do they contribute to kernel weight at an individual QTL level? Fa Cui Anming Ding Jun Li Chunhua Zhao Xingfeng Li Deshun Feng Xiuqin Wang Lin Wang Jurong Gao ...

  2. P/Ge-Wang joins P/Slaughter-Burnham and P/Boethin in the club of comets in 1/1 resonance with Jupiter

    Science.gov (United States)

    Benest, Daniel G.

    Three comets are now known to be at or near the 1/1 resonance with Jupiter: P/Slaughter-Burnham, P/Boethin and the newly discovered P/Ge-Wang. Their orbital evolutions are compared, using the elliptic three-dimensional restricted three-body model sun-Jupiter-comet. Although details of the individual orbits differ, the three comets have very similar general dynamical behaviors, and stay during a long time at or near the 1/1 resonance, at least for several thousand years.

  3. [Gao Jingyi. Han yu yu bei Ou yu yan : Han yu yu Wula'er yu yan ji Yin Ou yu yan tong yuan tan jiu] / Ago Künnap

    Index Scriptorium Estoniae

    Künnap, Ago, 1941-

    2010-01-01

    Arvustus: Gao Jingyi. Han yu yu bei Ou yu yan : Han yu yu Wula'er yu yan ji Yin Ou yu yan tong yuan tan jiu = Chinese language and languages of northern Europe. Beijing : Zhongguo she hui ke xue chu ban she, 2008

  4. Wang-Landau Without Binning

    Science.gov (United States)

    Brown, G.; Nicholson, D.; Odbadrakh, Kh.; Eisenbach, M.; Rusanu, A.

    2012-02-01

    Results are presented for Wang-Landau calculations on a Heisenberg model of BCC Fe that describe the density of states as function defined for all accessible energies instead of a function tabulated at discrete values of the energy. The density of states function described here is an analytic result valid near the ground state supplemented by a polynomial expansion. The probability density of Wang-Landau random walkers is sampled for a fixed density of states, and that probability density can be used to improve the estimated density of states. Methods for evaluating the convergence of the density of states are discussed along with the diffusion behavior of the random walkers. This work was performed at the Oak Ridge National Laboratory, which is managed by UT-Battelle, LLC under Contract No. DE-AC05-00OR22725, and sponsored by the Laboratory Directed Research and Development Program (ORNL), by the Mathematical, Information, and Computational Sciences Division; Office of Advanced Scientific Computing Research (US DOE), and by the Division of Materials Sciences and Engineering; Office of Basic Energy Sciences (US DOE). Computer resources provided by Florida State University.

  5. ABOUT THE HISTORY OF THE MORPHOLOGICAL VARIANT: PYATIDESYAT’YU VS. PYAT’YUDESYAT’YU

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    S. V. Ryabushkina

    2014-01-01

    Full Text Available There are numerous deviations in the forms of compound numerals in speech. Most users do not consider them incorrect: regularly used forms turn out to be diagnostic mistakes marking zones of grammatical instability and demonstrating tendencies in language development. In modern system the instrumental case of ‘large’ numbers (from ‘50’ pyat’desyat to ‘80’ vosem’desyat and ‘large’ hundreds (from ‘500’ pyat’sot to ‘900’ devyat’sot is used in two variants. The former — pyat’yudesyat’yu, pyat’yustami  —  complies  with  the  fixed norm,  where  each  component of the compound numeral is declined. The latter pyat’idesyat’yu, pyat’istami has a simplified genitive form, which is conditioned by the lexicalization of the form and becomes the stem of the composite numeral. A common stem is found in both compound numerals and numeral names (pyatidesyatiletnij. The records of the two rivaling forms go as far back as three centuries ago. The article deals with the history of unification from the XVIII century up to now (M. V. Lomonosov, A. A. Barsov, N. I. Grech, A. Kh. Vostokov, F. I. Buslaev, A. A. Shakhmatov, etc. A great number of unified stems testify that this form is becoming the norm of usage.

  6. 王弼《老子注》的詮釋辨證/ Interpretative Dialectics of Wang Bi’s Exegesis of Lao-Tzu

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    Jung-Tao TSAI

    2012-09-01

    Wang Bi, the most prominent scholar of metaphysics of the Wei and Jin Dynasties, was an unprecedented genius throughout the history of Chinese philosophy. In this article, the author examines the brilliant contributions made by Lin Li Zhen, Yu Dun Kang and Rudolf G. Wagner, who are noticed for their research of Exegesis of Lao-Tzu. It is a synthesis of the directions of investigation, approaches, and significant findings they have come up with. Among the three interpretations, Lin focuses on the explanation of Wang’s metaphysic thinking while Yu emphasizes Wang’s secular concerns by proposing the “philosophy of thoroughness” and political holism. As for Wagner, he approaches this work with the views of linguistic philosophy and suggests refined stylistics as interpretative strategy, which functions to enrich the textual contents.

  7. Changming Wang - Journal of Earth System Science | Indian ...

    Indian Academy of Sciences (India)

    Volume 125 Issue 3 April 2016 pp 585-603. Petrogenesis, zircon U–Pb age, and geochemistry of the A-type Mogou syenite, western Henan Province: Implications for Mesozoic tectono-magmatic evolution of the Qinling Orogen · Xinyu He Jionghui Wang Changming Wang Emmanuel John M Carranza Liang Chen Bin Wu.

  8. Chemical gas-dynamics beyond Wang Chang-Uhlenbeck's kinetics

    Science.gov (United States)

    Kolesnichenko, Evgeniy G.; Gorbachev, Yuriy E.

    2014-12-01

    Wang Chang-Uhlenbeck equation does not give possibility to take into account intermolecular processes such as redistribution of the energy among different degrees of freedom. The modification of the generalized Wang Chang-Uhlenbeck equation including such processes is proposed. It allows to study for instance the kinetics of non-radiative transitions. Limitations of this approach are connected with the requirements of absence of polarization of rotational momentum and phases of intermolecular vibrations.

  9. [Autobiography of modern acupuncturist Yu Shu-zhuang].

    Science.gov (United States)

    Li, Jia-jian' i; Guo, Jing; Yu, Zhen-zhong; Wang, Lin-peng

    2014-11-01

    Professor YU Shu-zhuang is a distinguished acupuncturist in China. He has practiced the TCM acupuncture-moxibustion clinical, educational and scientific research for 60 years in his life. In clinic, he summarized the experiences "five-ming first"; in treatment, he insisted "dredging" and "regulating", protecting the function of spleen and stomach, and needles should be less but specific. In the meanwhile, he made a deep study on the function and clinical effects of specific acupoints, and used the research results of propagated sensation along channel to guide clinical treatment, forming his special academic points. Professor YU has educated a great number of acupuncture-moxibustion talents in China and foreign countries, making great contribution to the popularization of acupuncture-moxibustion in the worldwide.

  10. An Archaeologist Celebrates his Jubilee: Yu. A. Zeleneev is 60

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    Zelentsova Olga V.

    2013-06-01

    Full Text Available The article is devoted to the 60th birth anniversary of Yuri Anatolyevich Zeleneyev, Candidate of Historical Sciences, and Associate Professor of Mari State University. The principal spheres of his scientific interests and research activities include the archaeology of the Golden Horde period and medieval history of the peoples inhabiting the Volga region. Yu. A. Zeleneyev has coordinated research on many medieval sites, and his role in the study of the Golden Horde capital cities in the Lower Volga area should be particularly noted. Being among its founders, he headed the Center for archeological and ethnological research with Mari State University and organized rescue and salvage excavations in the Mari El Republic and adjacent territories. Yu. A. Zeleneyev is the author and coauthor of over 160 scientific and methodical works, editor of 9 collections of research papers, and deputy editor of the “Povolzhskaya Arkheologia” ("The Volga Region Archaeology" journal.

  11. WANG TILE SIZE IN TERMS OF CIRCULAR PARTICLE DYNAMICS

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    David Šedlbauer

    2017-11-01

    Full Text Available The main advantage of the Wang tiling concept for material engineering is ability to create large material domains with a relatively small set of tiles. Such idea allows both a reduction of computational demands and preserving heterogeneity of a reconstructed media in comparison with traditional cell concepts. This work is dealing with a random heterogeneous material composed of monodisperse circular hard particles within a matrix. The Wang tile sets are generated via algorithm with molecular dynamics and adaptive boundaries approach. Even though previous works proved usefulness of the Wang tiling for material reconstruction, still plenty of questions remain unanswered. In here we would like to provide simulations with emphasis on the overall particle distribution and the ratio of hard disc number to tile size. The results and discussion should followers help with settings of both tile generations and the tiling algorithms when creating samples of various degree of heterogeneity.

  12. [The anatomical concept of Ma Wang Dui archeological artifacts].

    Science.gov (United States)

    Yang, Su-Tso

    2010-01-01

    Amongst the archeological findings of Ma Wang Dui that concern the human anatomy, the first noted was a well-preserved female corpse, which demonstrated superb antiseptic techniques of the ancient Chinese. Also, 14 medical books were excavated and revealed a prototype of human visceral anatomy. The differentiation between small and large intestines was absent, and only the term of "intestine" was mentioned. The term of "triple energizers" was absent, too. However, contexts of surface anatomy were already abundant. Analyzing the terms of relative position, the anatomical position portrayed by the Ma Wang Dui medical texts is very similar to that of modern medicine.

  13. Density of states for systems with multiple order parameters: a constrained Wang-Landau method

    Science.gov (United States)

    Chan, Chor-Hoi; Brown, Gregory; Rikvold, Per Arne

    2017-11-01

    A macroscopically constrained Wang-Landau Monte Carlo method was recently proposed to calculate the joint density of states (DOS) for systems with multiple order parameters. Here we demonstrate results for a nearest-neighbor Ising antiferromagnet with ferromagnetic long-range interactions (a model spin-crossover material). Its two relevant order parameters are the magnetization M and the staggered magnetization M s. The joint DOS, g(E, M, M s) where E is the total system energy, is calculated for zero external field and long-range interaction strength, and then obtained for arbitrary values of these two field-like model parameters by a simple transformation of E. Illustrations are shown for several parameter sets.

  14. [On the contribution of Prof. Yu. S. Balashov to the fundamental parasitology].

    Science.gov (United States)

    Ryss, A Iu

    2013-01-01

    Brief review of main conceptions of Yu. S. Balasov in fundamental parasitology: types of host-parasite relations, evolution, transmissive infections, econiches, population structure, parasite communities.

  15. Control of accuracy in the Wang-Landau algorithm

    Science.gov (United States)

    Barash, L. Yu.; Fadeeva, M. A.; Shchur, L. N.

    2017-10-01

    The Wang-Landau (WL) algorithm has been widely used for simulations in many areas of physics. Our analysis of the WL algorithm explains its properties and shows that the difference of the largest eigenvalue of the transition matrix in the energy space from unity can be used to control the accuracy of estimating the density of states. Analytic expressions for the matrix elements are given in the case of the one-dimensional Ising model. The proposed method is further confirmed by numerical results for the one-dimensional and two-dimensional Ising models and also the two-dimensional Potts model.

  16. A Study on Yu Kilchun and His Network of Acquaintances (1881–1907)

    OpenAIRE

    Masutani Yuichi

    2016-01-01

    From the time of his studies in Japan until his return to Korea in 1907, Yu Kilchun’s acquaintances can be divided into three categories: people Yu met during his studies at Keio Gijuku, people Yu met to plan a coup during his exile, and people who participated in Tonga Ch’ŏngnyŏnhoe and Irhan Tongjihoe from 1906.Although his time at Keio Gijuku was not long, the people he met during his studies bonded strongly, and a network of academic contacts was formed through reunions. These connectio...

  17. THE APPLICATION OF SURVEY IN ER WANG TEMPLE RESTITUTING

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    W. Shuai

    2013-07-01

    Full Text Available Er Wang Temple, in World Heritage Site "Dujiang Weirs and Qingchengshan Mountai", was severely destroyed in Wenchuan earthquake of May 2008. There are several problems at different level in every building, such as structural distortion, foundation displacement, wall fracture, roof damage, etc. The stage was completely collapsed in the earthquake. Tableland the stage situated had a huge crack and slope collapse. This article is for the stage renovation. The survey of damage in earthquake is the basis of Er Wang Temple restituting. Survey including field survey after the earthquake and the measurement and investigation for the remained construction member of the main wood structure. For field survey, the basis of pillars which had not have significantly affects in earthquake could be seem as the reference points for measurement. The investigation of remained main wood construction member, especially the size of the key structures and site and manufacture method of the joints, is the important basis for recovery stage. Our team did our utmost to restore the original appearance of stage in design, materials and craft by various tools, which include measured drawings in different times, old images collection, fine measuring by 3D laser scan, measurement of leftover pieces, logical inference.

  18. Ke Wang, a Chinese television soap opera with a message.

    Science.gov (United States)

    Wang, M; Singhal, A

    1992-01-01

    The Chinese soap opera, Ke Wang, was created by Li Xiaoming between August 1989 and June 1990 and produced at a cost of US$4650 per episode. The characters were drawn from everyday ordinary Chinese life: a traditional and open-minded and caring woman, a typical mother who works hard and loves her children, a highly educated upwardly mobile man who divorces his wife, a professor criticized during the Cultural Revolution, a doctor prejudiced against ordinary people, a kind honest man who marries the divorcee, a friend of the divorcee, a man who is optimistic in spite of bad experiences during the Cultural Revolution, and an excellent medical doctor who also resolves conflicts. The program was very popular, even among Communists, because of its value-based content, the real-life nature of the show, the change from highly restricted programming, the elaborate and supportive media coverage, and dialogue which closely matches audience preferences. The show has been aired by over 100 stations to date and has reached a total estimated audience of 550 million. The sale of television sets has increased since the show's appearance. The script reflects the conflicts between traditional and modern Chinese values. Pro-social values and behaviors are learned from the role models depicted; examples are given of immediate social impact. Ke Wang was a by-product of the Beijing Television Arts Center's interest in designing television programs that are relevant to the lives of ordinary people. The 60-minute scripts dealt with issues such as the status of women, social morality, family harmony, class conflict, responsible parenthood, maintenance of traditional culture, volunteerism, child development, and coping with physical disability. The Chinese government hailed Ke Wang as model television and awarded US$20,000 in prize money to the producers. The Chinese government is planning to produce other entertainment-education soap operas, which raises the problem of blatant, political

  19. Multiple Walkers in the Wang-Landau Algorithm

    Energy Technology Data Exchange (ETDEWEB)

    Brown, G

    2005-12-28

    The mean cost for converging an estimated density of states using the Wang-Landau algorithm is measured for the Ising and Heisenberg models. The cost increases in a power-law fashion with the number of spins, with an exponent near 3 for one-dimensional models, and closer to 2.4 for two-dimensional models. The effect of multiple, simultaneous walkers on the cost is also measured. For the one-dimensional Ising model the cost can increase with the number of walkers for large systems. For both the Ising and Heisenberg models in two-dimensions, no adverse impact on the cost is observed. Thus multiple walkers is a strategy that should scale well in a parallel computing environment for many models of magnetic materials.

  20. A Study on Yu Kilchun and His Network of Acquaintances (1881–1907

    Directory of Open Access Journals (Sweden)

    Masutani Yuichi

    2016-08-01

    Full Text Available From the time of his studies in Japan until his return to Korea in 1907, Yu Kilchun’s acquaintances can be divided into three categories: people Yu met during his studies at Keio Gijuku, people Yu met to plan a coup during his exile, and people who participated in Tonga Ch’ŏngnyŏnhoe and Irhan Tongjihoe from 1906.Although his time at Keio Gijuku was not long, the people he met during his studies bonded strongly, and a network of academic contacts was formed through reunions. These connections played a crucial role when Yu was active in the political scene in 1894 during the Kabo Reform period. After Yu left Korea on an exile following Emperor Kojong’s flight to the Russian legation in February 1896, he established a new network of acquaintances. Specifically, his journals from 1901 revealed that Yu was searching for people in Shizuoka, Gifu, and Hokkaido, who would take part in his conspiracy. Since he came to Tokyo after serving his time at the Ogasawara Islands, he worked with Tonga Ch’ŏngnyŏnhoe and Irhan Tongjihoe. Additionally, this paper demonstrated that he had connections with the Tonghak Order, and that it was possible for Yu to express his opinions in the press through O Sech’ang and Yi Inchik, who were residing in Korea. Around the same time, he also traveled around Yamanashi, Nagano, Toyama, and Fukui, and made efforts to facilitate trade between Korea and Japan. Such efforts were feasible thanks to the network of collaborators in Korea.

  1. The Wang-Meng interacting model and the gravitational collapse

    Energy Technology Data Exchange (ETDEWEB)

    Campos, Miguel de [Universidade Federal de Roraima, Boa Vista (Brazil)

    2013-07-01

    Full text: Several alternatives have appear in the literature to supply the accelerated process of universal expansion, and the simplest possibility is to consider the inclusion of a cosmological constant. The inclusion can be realized in both sides of the Einstein field equations, furnishing different physical interpretations in accord with the side of the Einstein field equations where the Λ is added. Considering the inclusion of the cosmological constant in the energy momentum tensor, this additional content is generally interpreted as the energy storage on the vacuum state of all fields in the universe. The inclusion of a vacuum component in the universal fluid furnishes an excellent description of the observed universe, but from the theoretical point of view we do not understand why the vacuum energy is so small and of the same order of magnitude of the matter density (cosmological constant problem). Depending on the point of view of the cosmological constant problem, competing approaches were developed considering a dynamical cosmological 'constant'. A more richer possibility is to consider a non-gravitational interaction models, where the interaction can occur between the dark components, the ordinary matter, and they do not evolve separately. The coupling between dark matter and dark energy has been considered in the literature in a three different ways: dark matter decaying to dark energy; dark energy decaying to dark matter; interacting in both directions. Wang and Meng (CQG 22, 283,2005) considered an alternative to the usual approach for the decay law of the Λ-term assuming the effect of the vacuum in the matter expansion rate. The simple manner adopt by the authors unified several current models that includes a vacuum decaying component interacting with matter content. The vacuum component alters the dynamics of the universal expansion process, then is a natural question: how is the influence of the vacuum energy in the gravitational

  2. Yu Kilchun’s Concept of Reform of the Tax System in the Korean Empire

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    Jinah Yang

    2016-08-01

    Full Text Available Yu Kilchun in “Semubu (Tax Department” criticizes the trend of the tax system, in which the authority to impose and collect taxes had been taken away from the local magistrates and the isŏ class (composed of hyangni, local functionaries, and sŏri, petty clerks during the Kabo Reform was once again returned to them. Yu Kilchun devised a concept of tax system reform on the premise of the reorganization of the administrative districts into the chu-kun-hyang-ri (state-county-district-village system. Yu’s idea was to make myŏn (hyang, district a governing administrative unit, placed under direct government control. To fund the operation of local governments, Yu proposed to create local taxes, chu taxes and hyang. Tax amounts were to be determined by local assemblies, chuhoe and hyanghoe, which were given the authority to deliberate on budget. The authority to review tax sources, levy and collect taxes was given to hyang, a small unit of administrative division. By imbuing this authority to hyang, Yu Kilchun planned to exclude local magistrates and the isŏ class in the tax collection process. Since “Semubu” discusses the reorganization of administrative divisions and local tax administration, as well as local tax system reform, the discovery of this text is significant, as it expands the range of the reform ideas proposed by Yu Kilchun, and furthermore the Enlightenment Party.

  3. Yu Kilchun’s Concept of Reform of the Tax System in the Korean Empire

    OpenAIRE

    Jinah Yang

    2016-01-01

    Yu Kilchun in “Semubu (Tax Department)” criticizes the trend of the tax system, in which the authority to impose and collect taxes had been taken away from the local magistrates and the isŏ class (composed of hyangni, local functionaries, and sŏri, petty clerks) during the Kabo Reform was once again returned to them. Yu Kilchun devised a concept of tax system reform on the premise of the reorganization of the administrative districts into the chu-kun-hyang-ri (state-county-district-village)...

  4. The Institute of Archaeology research teams at Çatalhöyük

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    Louise Martin

    2008-09-01

    Full Text Available This is the first in a series of articles to appear in Archaeology International highlighting the Institute of Archaeology’s involvement in the Çatalhöyük Research Project. In this first piece, the Institute’s teams are introduced and their research areas briefly outlined, with the aim of showing the range of work that Institute researchers and students undertake. Future issues of Archaeology InternationaI will provide a forum for individual teams to expand on their results from Çatalhöyük.

  5. The ABCs of Chinese Pop: Wang Leehom and the Marketing of a Global Chinese Celebrity

    OpenAIRE

    Grace Wang

    2012-01-01

    How did singer Wang Leehom, a Chinese American raised in the suburbs of New York, end up becoming one of the industry heavyweights of Mandopop (Mandarin-language pop music)? This essay uses Wang as a case study to investigate how discourses of race, market, and belonging are reworked in global contexts. Drawing on Sau-ling Wong’s theoretical insights on transnational processes of race, citizenship, and belonging, it argues that Wang capitalizes on a fluid dynamic of sameness and difference to...

  6. Yue Joseph Wang named Grant A. Dove Professor of Electrical and Computer Engineering

    OpenAIRE

    Owczarski, Mark

    2009-01-01

    Yue Joseph Wang, professor of electrical and computer engineering in the College of Engineering at Virginia Tech, has been named the Grant A. Dove Professor of Electrical and Computer Engineering by the Virginia Tech Board of Visitors.

  7. Ge/SiGe for silicon photonics

    Science.gov (United States)

    Ishikawa, Yasuhiko

    2017-01-01

    Near-infrared Ge photonic devices on a Si platform are presented toward low-cost, low-energy and high-capacity optical communications. Using Ge epitaxial layers selectively grown by chemical vapor deposition on Si-on-insulator layers, Ge photodiodes (PDs) of vertical pin structures are integrated with Si optical waveguides. The integrated Ge PDs show high responsivities as large as 0.8 A/W at 1.55 μm with the 3-dB cutoff frequency more than 10 GHz. SiGe/Ge heterostructures have potential applications to higher-performance devices. One application is to low-noise and low-voltage avalanche photodiodes (APDs), where a SiGe layer is inserted at the interface between the optical absorption layer of Ge and the carrier-multiplication layer of Si or Ge. The band discontinuity at the interface enhances the impact ionization for photo-generated carriers injected via SiGe. Fabricated APDs show an enhanced multiplication gain. The other application of SiGe is to a stressor to control the direct bandgap of Ge. As a proof of concept, a tensile-strained Si0.2Ge0.8 overlayer is shown to induce a compressive stress in the underlying Ge mesa stripe, leading to a blue shift in the absorption edge of Ge.

  8. Increases in Xu Zheng and Yu Zheng among Patients with Breast Cancer Receiving Different Anticancer Drug Therapies

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    Sheng-Miauh Huang

    2013-01-01

    Full Text Available Aim. The objectives of this study were to compare yang-xu, yin-xu, and yu among patients with breast cancer right before, one month after, and three months after receiving target, chemo, or combined therapy. Method. After recruiting 126 patients from 4 hospitals in northern Taiwan, a longitudinal study was carried out with 61 patients receiving chemotherapy, 30 receiving target therapy, and 35 receiving combined therapy. Yang-xu, yin-xu, and yu were assessed using the Traditional Chinese Medical Constitutional Scale (TCMCS, with higher scores indicating more xu and yu. Results. There were significant increases in yang-xu, yin-xu, and yu at 1 month and 3 months after than before the start of the chemotherapy, target, or combined therapy. Patients receiving combined therapy had significantly higher scores in yang-xu and yin-xu than patients receiving chemo or target therapy. A history of coronary heart disease was associated with more yin-xu. Those patients who had undergone a mastectomy were associated with less yu zheng than those patients who had not. Conclusion and Implications. TCM doctors should focus their treatment on dealing with xu and yu in order to support their patients, as they complete their modern anticancer treatments.

  9. Cryptanalysis of Wang et al.’s lattice-based key exchange protocol

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    Daya Sagar Gupta

    2016-09-01

    Full Text Available Wang et al. proposed a new hard problem on lattices which is an extension of the small integer solution (SIS on lattices. This new generated hard problem is named to be bilateral in-homogeneous small integer solution (Bi-ISIS. Using the hardness of Bi-ISIS, Wang et al. proposed a new key exchange protocol, which is based on the lattice-based cryptography. In this paper, we signalize that Wang et al.’s lattice-based key exchange protocol is vulnerable to an attack, namely, man-in-the-middle (MITM attack. Through this attack, Eavesdropper can intercept the authenticated messages and communicate the unauthentic messages among the communicating parties.

  10. [Wang Yinglin and his answer to the questions of a Korean physician].

    Science.gov (United States)

    Liang, Y

    2000-04-01

    The book named Da Chaoxianyi Wen (Answer to the Questions of a Korean Physician), written in 1624, recorded the written answers of Wang Yinglin, a Chinese official in the Ming dynasty, to the questions of Yin Zhiwei, a Korean official physician. The 24 A&Qs concerned about the therapy of ordinary diseases, channels and the theories of TCM, etc. The study of this book could not only clarify various questions on the exchanges between Wang and Yin, but also learn more information on the development of Korean medicine at that time.

  11. Wang et al., Afr J Tradit Complement Altern Med. (2016) 13(1):134 ...

    African Journals Online (AJOL)

    PROF ADEWUNMI

    GB30) in patients with sciatica, and specific changes in the brain default network (Li et al., 2012). Wang et al. observed the effect of acupuncture Taichong(LR3) and Hegu(LI4) for mild cognitive impairment. (MCI) and Alzheimer diseases (AD), and ...

  12. New Wang-Landau approach to obtain phase diagrams for multicomponent alloys

    Science.gov (United States)

    Takeuchi, Kazuhito; Tanaka, Ryohei; Yuge, Koretaka

    2017-10-01

    We develop an approach to apply the Wang-Landau algorithm to multicomponent alloys in a semi-grand-canonical ensemble. Although the Wang-Landau algorithm has great advantages over conventional sampling methods, there are few applications to alloys. This is because calculating compositions in a semi-grand-canonical ensemble via the Wang-Landau algorithm requires a multidimensional density of states in terms of total energy and compositions, and constructing it is difficult from the viewpoints of both implementation and computational cost. In this study, we develop a simple approach to calculate the alloy phase diagram based on the Wang-Landau algorithm, and show that a number of one-dimensional densities of states could lead to compositions in a semi-grand-canonical ensemble as a multidimensional density of states could. Finally, we apply the present method to Cu-Au and Pd-Rh alloys and confirm that the present method successfully describes the phase diagram with high efficiency, validity, and accuracy.

  13. Retraction Statement: 'MicroRNA-218 increases cellular sensitivity to Rapamycin via targeting Rictor in cervical cancer' by Li J, Wang J, Wang Y, Qiu H.

    Science.gov (United States)

    2017-02-01

    The above article from APMIS, published online on 24 April 2015 in Wiley Online Library (wileyonlinelibrary.com) and in Volume 123, pp. 562-570, has been retracted by agreement between the authors, the journal Editors in Chief, Professors Bodil Norrild, Ben Vainer and Elisabeth Ralfkiaer, and John Wiley & Sons Ltd. The article has been retracted due to errors in the reported results. In this study, the authors used HeLa and SiHa cell lines to investigate the biological roles of miR-218. However, subsequently it emerged that the two cell lines were contaminated in the laboratory by other unknown cell lines. When repeating the experiments, it was found that the functions of miR-218 were not as significant as had been previously reported, especially its effects on rapamycin sensitivity. Reference Li J, Li X, Wang J, Wang Y, Qiu H. MicroRNA-218 increases cellular sensitivity to Rapamycin via targeting Rictor in cervical cancer. APMIS 2015; 123:562-570. doi: 10.1111/apm.12387. © 2016 APMIS. Published by John Wiley & Sons Ltd.

  14. [Textual research on Guang dong xin yu (New Sayings of Guangdong) quoted in Ben cao gang mu shi yi (Supplements to Compendium of Materia Medica].

    Science.gov (United States)

    Zhang, Ruixian; Zhang, Wei; Li, Jian; Liang, Fei

    2014-05-01

    Altogether 15 terms for Guang dong xin yu (New Sayings of Guangdong) were used in Ben cao gang mu shi yi (Supplements to Compendium of Materia Medica), including Yue yu (Cantonese sayings), Chong yu (Sayings from Insect Drug), Jie yu (Sayings from Crustacean Drug), Xin yu (New Sayings), Yue hai xiang yu (Fragrant Sayings from Cantonese Region), Yue zhi mu yu (Sayings from Plants in Cantonese Annals), Guang dong suo yu (Trivial Sayings from Guangdong), Yue shan lu (Records of Cantonese Mountains), Yue lu (Cantonese Records), Jiao guang lu (Joint Guangdong Records), Yue cao zhi (Records of Cantonese Grasses), Guang guo lu (Records of Guangdong Fruits), Nan yue suo ji (Trivial Records of Southern Canton), Guang zhi (Guangdong Records), Yue zhi (Cantonese Records) etc. dealing with 57 sorts of drugs (with individual overlapping ones), the author of Xin yu was Qu Dajun, a surviving fogy of the Ming Dynasty actively involved in the activities to restore the old dynasty and resist the Qing Dynasty, and was persecuted in the literary inquisition in which his works were burnt so that Zhao Xuemin, when quoting his texts, had to go in a roundabout way.

  15. Comparison of congener profiles of polychlorinated biphenyls between Yu-cheng children and a potential food source

    Energy Technology Data Exchange (ETDEWEB)

    Lung Shih-Chun Candice [Research Center for Environmental Changes, Academia Sinica, Taipei (Taiwan); Guo Yu-Liang Leon; Chang Ho-Yuan [Dept. of Environmental and Occupational Health, Coll. of Medicine, National Cheng Kung Univ., Tainan (Taiwan)

    2004-09-15

    In 1979, about two thousand people in central Taiwan were intoxicated by consumption of the rice oil that was contaminated with polychlorinated biphenyls (PCBs). This ''Yu-cheng'' incident was one of the two human tragedies which people ingested substantial amounts of PCBs within a short period of time. Some of the follow-up epidemiological studies focused on the children born to the exposed mothers, the Yu-cheng children, since they could be exposed to PCBs via breast-feeding or transplacental transfer. This report presents the results of the serum PCB levels of the 21 Yu-cheng children with a congener-specific analysis. On the other hand, fish consumption is thought to be the single most important exposure route to PCBs to the general public; thus, it is crucial to understand PCB exposure from fish consumption. In a separated study to assess PCB contamination in fish, PCB congener concentrations in tilapia (Oreochromis hybrids), the most popular fish in Taiwan, were evaluated. The consumption quantity of tilapia is the highest throughout the Island. It is mostly farmed in fresh water but can also be bred in saltwater. This report presents the concentrations and profiles in the serums of the Yu-cheng children. The congener profile is compared with PCB profile in the serum of Yu-cheng women reported previously and that in one of the potentially significant exposure source, tilapia, conducted in a separated work. Remarkable similarity between the profile of Yu-cheng children and that of the tilapia is revealed and discussed.

  16. La fuerza expresiva del deseo en Lan Yu de Stanley Kwan .

    Directory of Open Access Journals (Sweden)

    David L. Eng

    2007-12-01

    Full Text Available Stanley Kwan's Lan Yu configures the emergence of homosexuality in contemporary China far beyond its validation in recognizably Western identitarian terms: the affirmation of an existing but misrecognized minority population; the defense of sexual "perversion"; the positing of sexual freedom, legal recognition, and political rights; the justification of a bourgeois consumer lifestyle, or even the expression of a universalizing and bindingtove bringing togethertwo abstract individuáis. Instead, in Kwan's film, homosexuality and its expressive desire mark the emergence of a new humanism in (postsocialist China under the shadows of global capitalism and neoliberal development. Gays and lesbians, that is, are harbingers of a new modernity, helping to situate China in its proper place within a cosmopolitan globalized world. From this perspective, homosexuality functions as a critical tool for organizing and evaluating the historical continuities and ruptures among China's (semicolonial past, its revolutionary aspirations for a socialist modernity, and its present investments in a neoliberal capitalist world order.

  17. Yu-Shiba-Rusinov states in phase-biased S-QD-S junctions

    DEFF Research Database (Denmark)

    Kiršanskas, Gediminas; Goldstein, Moshe; Flensberg, Karsten

    2015-01-01

    We study the effects of a phase difference on Yu-Shiba-Rusinov (YSR) states in a spinful Coulomb-blockaded quantum dot contacted by a superconducting loop. In the limit where charging energy is larger than the superconducting gap, we determine the subgap excitation spectrum, the corresponding...... supercurrent, and the differential conductance as measured by a normal-metal tunnel probe. In absence of a phase difference only one linear combination of the superconductor lead electrons couples to the spin, which gives a single YSR state. With finite phase difference, however, it is effectively a two......-channel scattering problem and therefore an additional state emerges from the gap edge. The energy of the phase-dependent YSR states depend on the gate voltage and one state can cross zero energy twice inside the valley with odd occupancy. These crossings are shifted by the phase difference towards the charge...

  18. VizieR Online Data Catalog: Kepler multiple transiting planet systems (Wang+, 2015)

    Science.gov (United States)

    Wang, J.; Fischer, D. A.; Xie, J.-W.; Ciardi, D. R.

    2017-10-01

    The sample of MTPSs remains the same as that in Wang et al. (2014, J/ApJ/783/4). From the NASA Exoplanet Archive (http://exoplanetarchive.ipac.caltech.edu), we select Kepler objects of interest (KOIs) that satisfy the following criteria: (1) disposition of either Candidate or Confirmed; (2) with at least two planet candidates; (3) Kepler magnitude (KP) brighter than 13.5. The above selection criteria resulted in 138 MTPSs in Wang et al. (2014, J/ApJ/783/4). With the updated Exoplanet Archive, the selection criteria resulted in 208 MTPSs. In this paper, we focus on the 138 MTPSs to be consistent with previous work. (4 data files).

  19. Formation of the oil composition of the Yu0 Bazhenov formation, Salym oil field

    Directory of Open Access Journals (Sweden)

    E.V. Soboleva

    2017-05-01

    Full Text Available The Bazhenov horizon of Western Siberia has been studied in considerable detail from different perspectives and different methods, a large number of studies have been devoted to a wide range of issues related to the lithological composition of rocks, their reservoir properties, the study of organic matter, properties and composition of oil at various analytical levels, and many others. This work is devoted to restoring conditions for the formation of oil properties and composition of the Yu0 Salym oil field, based mainly on the geochemical aspects of the study of oil changes both in area and in the section within the productive layer of Salym structure, using some geological data, such as structural plan for the reflecting horizon B (the roof of the Bazhenov formation, having a complex configuration, reservoir temperatures and pressure, well flow rates, and others. There is no single reservoir at the Salym field in the Yu0 formation. For the conclusions of the geological-geochemical interpretation, a sampling of 61 samples of oil from exploration, appraisal and production wells of the initial stages of production was used, since in the future when oil is extracted, the ecology in the deposits changes, and 21 samples of oil from other fields in the West Siberian oil and gas basin. Conventionally, three types of oils are distinguished, differing in their physicochemical parameters, group hydrocarbon and molecular composition. It was suggested that in addition to the own organic matter of the Bazhenov formation, hydrocarbon fluids of the Vasyugan, Tyumen formations and possibly Paleozoic rocks were involved in the formation of the oil composition. The flow of light liquid hydrocarbons and gases occurred along the zones of faults of different genesis and duration of existence.

  20. Becoming an International Scientist in South Korea: Ho Wang Lee's Research Activity about Epidemic Hemorrhagic Fever.

    Science.gov (United States)

    Shin, Miyoung

    2017-04-01

    In the 1960-70s, South Korea was still in the position of a science latecomer. Although the scientific research environment in South Korea at that time was insufficient, there was a scientist who achieved outcomes that could be recognized internationally while acting in South Korea. He was Ho Wang Lee(1928~ ) who found Hantann Virus that causes epidemic hemorrhagic fever for the first time in the world. It became a clue to identify causative viruses of hemorrhagic diseases that were scattered here and there throughout the world. In addition, these outcomes put Ho Wang Lee on the global center of research into epidemic hemorrhagic fever. This paper examines how a Korean scientist who was in the periphery of virology could go into the central area of virology. Also this article shows the process through which the virus found by Ho Wang Lee was registered with the international academia and he proceeded with follow-up research based on this progress to reach the level at which he generalized epidemic hemorrhagic fever related studies throughout the world. While he was conducting the studies, experimental methods that he had never experienced encountered him as new difficulties. He tried to solve the new difficulties faced in his changed status through devices of cooperation and connection. Ho Wang Lee's growth as a researcher can be seen as well as a view of a researcher that grew from a regional level to an international level and could advance from the area of non-mainstream into the mainstream. This analytic tool is meaningful in that it can be another method of examining the growth process of scientists in South Korea or developing countries.

  1. Morphology and geochemistry of placer gold from Wang River, Lampang Province, Northern Thailand

    Science.gov (United States)

    Lim, D.; Lee, I.

    2011-12-01

    Wang River (Mae Nam Wang) in Lampang Province, Northern Thailand which is surrounded with many lode gold deposits has potential to develop as a placer gold deposit. Gold particles from 10 sites in Wang River range from fine to coarse (electrum or high purity gold with high fineness (1000Au/Au+Ag) levels up to 951 as well as a minor amount of Cu and Hg. Normally, the zoning patterns of Au and Ag are common in placer gold and the high fineness in rim can be explained by either selective extraction of Ag or precipitation of Au. However, there is no significant difference in fineness between core and rim in gold grains in this study even though there are differences in composition among grains. Many cavities are also shown filling with silicate and/or clay mineral in microtextures. These geochemical signatures from microtextures are capable of providing genetic implication. Furthermore, the combination of results such as shape parameter, geochemical signature, and assemblages of heavy minerals can be a useful tool in exploration for gold.

  2. The ABCs of Chinese Pop: Wang Leehom and the Marketing of a Global Chinese Celebrity

    Directory of Open Access Journals (Sweden)

    Grace Wang

    2012-06-01

    Full Text Available How did singer Wang Leehom, a Chinese American raised in the suburbs of New York, end up becoming one of the industry heavyweights of Mandopop (Mandarin-language pop music? This essay uses Wang as a case study to investigate how discourses of race, market, and belonging are reworked in global contexts. Drawing on Sau-ling Wong’s theoretical insights on transnational processes of race, citizenship, and belonging, it argues that Wang capitalizes on a fluid dynamic of sameness and difference to appeal to a heterogeneous Chinese-speaking audience that stretches across China to Taiwan, Hong Kong, Southeast Asia, and the greater Chinese diaspora. Through an examination of the racial and national contexts that frame Wang’s participation in Mandopop, this essay analyzes the particular calibrations of Chineseness that emerge from the singer’s music and public image and the imperfect translation of identities such as Chinese American, Chinese diasporic, and Chinese across diverse linguistic and national communities.

  3. PREFACE: SANS-YuMO User Meeting at the Start-up of Scientific Experiments on the IBR-2M Reactor: Devoted to the 75th anniversary of Yu M Ostanevich's birth

    Science.gov (United States)

    Gordely, Valentin; Kuklin, Alexander; Balasoiu, Maria

    2012-03-01

    The Second International Workshop 'SANS-YuMO User Meeting at the Start-up of Scientific Experiments on the IBR-2M Reactor', devoted to the 75th anniversary of the birth of Professor Yu M Ostanevich (1936-1992), an outstanding neutron physicist and the founder of small-angle neutron scattering (field, group, and instrument) at JINR FLNPh, was held on 27-30 May at the Frank Laboratory of Neutron Physics. The first Workshop was held in October 2006. Research groups from different neutron centers, universities and research institutes across Europe presented more than 35 oral and poster presentations describing scientific and methodological results. Most of them were obtained with the help of the YuMO instrument before the IBR-2 shutdown in 2006. For the last four years the IBR-2 reactor has been shut down for refurbishment. At the end of 2010 the physical launch of the IBR-2M reactor was finally realized. Nowadays the small-angle neutron scattering (SANS) technique is applied to a wide range of scientific problems in condensed matter, soft condensed matter, biology and nanotechnology, and despite the fact that there are currently over 30 SANS instruments in operation worldwide at both reactor and spallation sources, the demand for beam-time is considerably higher than the time available. It must be remembered, however, that as the first SANS machine on a steady-state reactor was constructed at the Institute Laue Langevin, Grenoble, the first SANS instrument on a 'white' neutron pulsed beam was accomplished at the Joint Institute for Nuclear Research at the IBR-30 reactor, beamline N5. During the meeting Yu M Ostanevich's determinative and crucial contribution to the construction of spectrometers at the IBR-2 high-pulsed reactor was presented, as well as his contribution to the development of the time-of-flight (TOF) small-angle scattering technique, and a selection of other scientific areas. His leadership and outstanding scientific achievements in applications of the

  4. Teachers' Use of a Pedagogical Framework for Improvement in Mathematics Teaching: Case Studies from YuMi Deadly Maths

    Science.gov (United States)

    Carter, Merilyn; Cooper, Tom; Anderson, Robyn

    2016-01-01

    This paper describes the pedagogical framework used by YuMi Deadly Maths, a school change process used to improve mathematics teaching and thus enhance employment and life chances for socially disadvantaged students. The framework, called the RAMR cycle, is capable of being used by mathematics teachers for planning and delivering lessons and units…

  5. Description of immature stages of Scymnus (Neopullus) sinuanodulus Yu and Yao (Coleoptera: Coccinellidae) with notes on life history

    Science.gov (United States)

    Wenhua Lu; Phetsamon Souphanya; Michael E. Montgomery

    2002-01-01

    We describe for the first time immature stages of the Scymnus subgenus Neopullus; namely the egg, larval (4 instars), and pupal stages of Scymnus (Neopullus) sinuanodulus Yu and Yao (Coleoptera: Coccinellidae), which is indigenous to China. This lady beetle was imported to...

  6. Serum concentrations and profiles of polychlorinated biphenyls in Taiwan Yu-cheng victims twenty years after the incident

    Energy Technology Data Exchange (ETDEWEB)

    Lung, S.-C. Candice [Research Center for Environmental Changes, Academia Sinica, Nankang, Taipei, Taiwan 115 (China); Guo, Y.-L.L. [Department of Environmental and Occupational Health, College of Medicine, National Cheng Kung University, 138 Sheng-Li Rd., Tainan, Taiwan 70428 (China); Chang, H.-Y.[Department of Environmental and Occupational Health, College of Medicine, National Cheng Kung University, 138 Sheng-Li Rd., Tainan, Taiwan 70428 (China)]. E-mail: h7154@mail.ncku.edu.tw

    2005-07-15

    In 1979, about 2000 people in central Taiwan were intoxicated via rice oil consumption that was contaminated with polychlorinated biphenyls (PCBs). This 'Yu-cheng' incident was one of the two known major human PCB intoxication episodes. Twenty years after the intoxication, serum samples of 435 Yu-cheng victims, 414 adults and 21 children, were collected. Sixteen PCB congeners were analyzed with a gas chromatograph-electron capture detector. We found the median concentration of total PCBs in the adult serum was 1500 ng/g lipid, still substantially higher than that of the general population in Taiwan (3.7-fold) and most seafood consumers in the world. Most of analyzed PCB congeners in children were below or around the detection limits. Congener no. 138, however, had the highest concentrations, approximately accounting for 55% and 29% in the child and adult groups, respectively. Given that PCBs are persistent organic pollutants and endocrine disruptors, the concentrations and congener-specific profiles regarding the Yu-cheng victims provide valuable information for the investigation of such chemicals in humans. - Total serum PCBs in the Yu-cheng adult victims twenty years after the incident were still higher than that of the general population in Taiwan.

  7. Maps of Relocation and Poems of Tang Dynasty Poets: Li Bai, Du Fu, and Han Yu

    Directory of Open Access Journals (Sweden)

    羅鳳珠、白璧玲、廖泫銘、范毅軍 、鄭錦全 Feng-Ju Lo,Pi-Ling Pai,Hsiung-Ming Liao,I-Chun Fan,Chin-Chuan Cheng

    2014-04-01

    Full Text Available Geographic environments affect literary contents and genre and thus, since ancient times, geographical area has been used to classify Chinese literature. In 1936 Liang Qichao was keenly aware of the relationship between literature and geography and brought up the idea of “literarygeography”. In 1979 Professor Chen Zhengxiang produced maps of birthplaces of Tang and Song poets to show the shift of Chinese cultural center from north to south. Furthermore, in the pastdecade, the attention to research in literary geography and geographical distribution of writersgradually increased. However, most studies focused on geographical distribution of birthplaces of writers and very few focused on the relationship between poets’ journey and the contents of their writings and their geographic environment. Meanwhile, geographic information system and aerialphotography have developed quickly and have become useful tools for the study of literary geography.Since then, the academic circles in Taiwan have built a solid foundation in this area. While Li Baiand Du Fu were called poetic immortal and poetic sage of the middle and end periods of the heydayof Tang Dynasty, respectively, Han Yu advocated the classical Chinese movement and becameone of the eight great authors of Tang and Song dynasties. Han Yu was also the best representative of Middle Tang poets. While the styles of these three poets differed from each other, they held key positions in the development and evolution of Tang poetry. Their footprints spread all over the countryand greatly affected later developments and contemporary of poetry. This project makes use of the digital Tang Dynasty maps by Tan Qixiang, Tang Dynasty transportation route maps by Yan Gengwang,aerial maps, the All Tang Poems, and chronicles of the poets to build the three poets’ relocation maps and study their poetic literature, language, geography, and interactions with others, in hopesof opening a new research direction

  8. Security analysis of boolean algebra based on Zhang-Wang digital signature scheme

    Science.gov (United States)

    Zheng, Jinbin

    2014-10-01

    In 2005, Zhang and Wang proposed an improvement signature scheme without using one-way hash function and message redundancy. In this paper, we show that this scheme exits potential safety concerns through the analysis of boolean algebra, such as bitwise exclusive-or, and point out that mapping is not one to one between assembly instructions and machine code actually by means of the analysis of the result of the assembly program segment, and which possibly causes safety problems unknown to the software.

  9. Conodont index fossil Hindeodus changxingensis Wang fingers greatest mass extinction event

    Science.gov (United States)

    Metcalfe, I.; Nicoll, R.S.; Wardlaw, B.R.

    2007-01-01

    The marine conodont fossil species, Hindeodus changxingensis Wang, that has a distinctive morphology, is restricted to a very narrow stratigraphic interval essentially from the Permian-Triassic extinction event through the internationally recognized boundary and into the very earliest Triassic. The species is geographically widespread in the Tethyan Region, from Italy to South China, and serves as a characteristic index fossil to reliably identify this short but critical interval that encompasses the greatest mass extinction of life on earth and the boundary between the Paleozoic and Mesozoic Eras. ?? 2007 Nanjing Institute of Geology and Palaeontology, CAS.

  10. Language Personality of the Publicist: Rhetorical and Stylistic Canon (Yu. Senkevich “To “Ra” Across the Atlantic”

    Directory of Open Access Journals (Sweden)

    Olga V. Shatalova

    2017-10-01

    Full Text Available In article the communicative and linguistic parameters of the speech of the publicist of the XX century Yu. Senkevich which are declared as a sample for formation of the language personality in the conditions of development of the modern information and communicative environment are designated. On the example of the analysis of the book «On “Ra” through Atlantic» locates the fact of that Yu.N. Senkevich’s creativity corresponds to the main criteria of popular scientific journalism: high degree of reliability, authoritativeness of the publicist; dynamism, dramatic nature, intelligence of a statement. The unostentatious enlightenment based on updating of scientific knowledge for the addressee and a dialogization of a publicistic discourse, the high level of psychological and philosophical generality, the declaration of humanistic values form specific rhetoric which is supported by the formal and grammatical organization of the speech of the publicist. Priority of syntactic designs of a certain type, stylistic ladders and figures – dynamism of a statement and scale of representation of material define. The humour and easy self-irony as significant characteristics of the language personality define a basis of the rhetorical and stylistic canon realized in publicistic works Yu.N. Senkevich – «the human view of people and society» that in the modern information and communicative environment becomes a necessary reference point.

  11. Revisiting the photometry of (308635) 2005 YU_{55} in four colors at McDonald Observatory

    Science.gov (United States)

    Ries, J.

    2014-07-01

    We have obtained wide-field CCD images of asteroid (308635) 2005 YU_{55} during November 13-18, 2011, using the McDonald Observatory 0.76-m telescope with a Prime Focus Corrector. The field of view of this instrument is 45' by 45', which allows reliable relative photometry in spite of the substantial sky motion of the object. We planned to take exposures through the B, V, R, and I filters, and spaced the timing to evenly sample the estimated 18-hour rotational period (based on Arecibo radar observations obtained in April 2010). We have also observed Landolt photometric standards on two separate nights under very good sky conditions to calibrate the target either directly or by calibrating the reference stars imaged with the target. We hoped to obtain color indexes and see how the color affects the lightcurve. Unfortunately, due to a glitch of new software installation at that time, the filter entries in the image headers were incorrect. It was easy to correctly identify the actual filters for the Landolt fields, but we had problems separating the V, R, and I images for the actual object. We are using only the images for which the identification is unambiguous, and we have approximately 100 images in R, 80 in V, 40 in B, and 20 in I. Using the phase parameter and the rotational period determined by other studies (Hicks, et al., Warner, et al.), we attempt to reconstruct the lightcurve in V and R and look for possible phase dependence in the (V-R) color index. Although the radar data favors the 19.31-h rotational period (Busch et al.), we will also check whether our data is consistent with the shorter 16.34-h solution. The results will be presented at the meeting.

  12. M.Yu. Lermontov’s linguistic/literary personality through perspective of linguistic personality perception by philologist V.V. Vinogrado

    OpenAIRE

    Larisa N. Kuznetsova

    2011-01-01

    The article considers M.Yu. Lermontov’s linguistic / literary personality through perspective of linguistic personality perception by Great Russian scientist-philologist and linguist, Academician V.V. Vinogradov.

  13. M.Yu. Lermontov’s linguistic/literary personality through perspective of linguistic personality perception by philologist V.V. Vinogrado

    Directory of Open Access Journals (Sweden)

    Larisa N. Kuznetsova

    2011-04-01

    Full Text Available The article considers M.Yu. Lermontov’s linguistic / literary personality through perspective of linguistic personality perception by Great Russian scientist-philologist and linguist, Academician V.V. Vinogradov.

  14. Study of Ge loss during Ge condensation process

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Z.Y.; Di, Z.F. [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China); Ye, L. [Lanzhou University, Lanzhou 730000 (China); Mu, Z.Q. [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China); Chen, D. [Lanzhou University, Lanzhou 730000 (China); Wei, X. [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China); Zhang, M., E-mail: mzhang@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China); Wang, X. [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China)

    2014-04-30

    Ge loss during Ge condensation process was investigated by transmission electron microscopy, Raman spectroscopy, secondary ion mass spectrometry and Rutherford backscattering spectrometry. This work reveals that Ge loss can be attributed to the Ge oxidation at SiO{sub 2}/SiGe interface, Ge diffusion in SiO{sub 2} layers and Ge trapped at buried SiO{sub 2}/Si interface. During Ge condensation process, with the increase of the Ge content, the Si atoms become insufficient for selective oxidation at the oxide/SiGe interface. Consequently, the Si and Ge are oxidized simultaneously. When the Ge composition in SiGe layer increases further and approaches 100%, the Ge atoms begin to diffuse into the top SiO{sub 2} layer and buried SiO{sub 2} layer. However, the X-ray photoelectron spectrometry analysis manifests that the chemical states of the Ge in top SiO{sub 2} layer are different from those in buried SiO{sub 2} layer, as the Ge atoms diffused into top SiO{sub 2} layer are oxidized to form GeO{sub 2} in the subsequent oxidation step. With the increase of the diffusion time, a quantity of Ge atoms diffuse through buried SiO{sub 2} layer and pile up at buried SiO{sub 2}/Si interface due to the interfacial trapping. The SiO{sub 2}/Si interface acts like a pump, absorbing Ge from a Ge layer continuously through a pipe-buried SiO{sub 2} layer. With the progress of Ge condensation process, the quantity of Ge accumulated at SiO{sub 2}/Si interface increases remarkably. - Highlights: • Ge loss during Ge condensation process is attributed to the Ge oxidation at SiO{sub 2}/SiGe interface. • Ge diffusion in SiO{sub 2} layers and Ge trapped at buried SiO{sub 2}/Si interface • When Ge content in SiGe layer approaches 100%, Ge diffusion into the SiO{sub 2} layer is observed. • Ge then gradually diffuses through buried SiO{sub 2} layer and pile up at SiO{sub 2}/Si interface.

  15. Interview with Xiaoli Wang PhD winner of CACA 2016 Young Investigator Award

    Directory of Open Access Journals (Sweden)

    Xiaoli Wang

    2016-07-01

    Full Text Available Xiaoli Wang is currently an R&D Senior Scientist in Agilent’s HPLC instrument R&D group at Agilent Technologies, Waldbronn, Germany. Prior to this, he was an R&D manager in Agilent’s CrossLab Group in the US focusing on development of novel chromatographic columns. He has a B.S. degree in Chemistry from Peking University, Beijing China and a PhD. degree in Analytical Chemistry from the University of Minnesota in 2006. He started his industrial career in the pharmaceutical industry at AstraZeneca for four years before joining Agilent Technologies in 2010. Recently, he won the prestigious 2016 Young Investigator Award from Chinese American Chromatography Association (CACA. This interview was conducted by Roland J.W. Meesters PhD, Editor-in-Chief of Journal of Applied Bioanalysis.

  16. Entropy of diluted antiferromagnetic Ising models on frustrated lattices using the Wang-Landau method.

    Science.gov (United States)

    Shevchenko, Yuriy; Nefedev, Konstantin; Okabe, Yutaka

    2017-05-01

    We use a Monte Carlo simulation to study the diluted antiferromagnetic Ising model on frustrated lattices including the pyrochlore lattice to show the dilution effects. Using the Wang-Landau algorithm, which directly calculates the energy density of states, we accurately calculate the entropy of the system. We discuss the nonmonotonic dilution concentration dependence of residual entropy for the antiferromagnetic Ising model on the pyrochlore lattice, and compare it to the generalized Pauling approximation proposed by Ke et al. [Phys. Rev. Lett. 99, 137203 (2007)PRLTAO0031-900710.1103/PhysRevLett.99.137203]. We also investigate other frustrated systems, the antiferromagnetic Ising model on the triangular lattice and the kagome lattice, demonstrating the difference in the dilution effects between the system on the pyrochlore lattice and that on other frustrated lattices.

  17. Wang et al., Afr J Tradit Complement Altern Med. (2015) 12(5):118 ...

    African Journals Online (AJOL)

    Proff.Adewunmi

    10.4314/ajtcam.v12i5.16. 121 manipulated for 1 minute with an interval of 10 minutes. Resting-state fMRI scan. The fMRI scanning were carried out in a 3.0 Tesla Signa HDxt MRI scanner (GE Company, Fairfield, America) at First Affiliated Hospital.

  18. Review of the monograph V. Yu. Lukyanova “Technical regulation in the system of the Russian legislation”

    Directory of Open Access Journals (Sweden)

    Albina S. Panova

    2017-09-01

    Full Text Available Objective to carry out a comprehensive analysis of a monograph by V.Yu. Lukyanova devoted to one of the main elements of the legal institution of technical regulation ndash the technical norm. Methods dialectic approach to the cognition of social phenomena which enables to analyze them in historical development and functioning in the context of the integrity of objective and subjective factors it determined the choice of the following research methods formallegal comparative legal etc. Results the main approaches of the reviewed monograph were assessed which refer to the nature of technical norm its position in the legislation on technical regulation. The reviewed monograph consists of an introduction two sections conclusion and bibliography. The introduction describes technical regulation at the modern stage of development substantiates the topicality of the research and briefly describes its structure. The first section is devoted to the legal nature of technical regulation. It explores such issues as the development of concepts about the acts stipulating the mandatory requirements to products the content of technical regulation the forms of adopting technical regulations and their juridical force. The work also analyzes the role of technical regulation in the legislation system of the Russian Federation. In conclusion the author proposes a systematicparametric model of technical regulation in the Russian Federation. Scientific novelty for the first time the assessment is given to the provisions of the reviewed monograph which refer to the nature of technical norm limitations of its action both in time and space and by the circle of persons the position in the modern Russian legislation. The conclusion is made that the monograph by V.Yu. Lukyanova should be published. Practical significance the reviewer concludes that the monograph by V.Yu. Lukyanova can be used by specialists in the sphere of technical regulation and standardization research

  19. Supercavitation Advances and Perspectives A collection dedicated to the 70th jubilee of YuN Savchenko

    CERN Document Server

    2012-01-01

    This collection is dedicated to the 70th jubilee of Yu. N. Savchenko, and presents experimental, theoretical, and numerical investigations written by an international group of well-known authors. The contributions solve very important problems of the high-speed hydrodynamics, such as supersonic motion in water, drag diminishing, dynamics and stability of supercavitating vehicles, water entry and hydrodynamic performances of hydrofoils, ventilated cavities after a disc and under the ship bottom. The  book is written for researches, scientists, engineers, and students interested in problems of hydromechanics.

  20. The Interrelation of Historical and Artistic Truth in Yu. Mushketyk’s Story “Semen Palii”

    OpenAIRE

    Pavlyuk, Nadiya

    2013-01-01

    The specificity of the historical and artistic truth’s proportionality, the historical authenticity of certain historical events are analyzed on the material of the first Yu. Mushketyk’s novel “Semen Palii” in the article. The analysis was done with using of the historical-functional, historical-genetic and typological methods of the literary text’s exploring. The key points to reinforce the actual authenticity of the work during the creative transformation of historical truth to the fiction ...

  1. Yuánmíng Yuán en el siglo XVIII: Arte entre la diplomacia y la filosofía; entre Europa y Pekín

    Directory of Open Access Journals (Sweden)

    Pedro Luengo

    2016-01-01

    Full Text Available Este estudio pretende probar que el Yuánmíng Yuán fue diseñado como una representación del macrocosmos imperial a partir de la filosofía de la China de Qianlong. Para ello se valorará la función simbólica de los palacios de estilo europeo a partir de las descripciones de embajadas orientales y occidentales. Esta información se pondrá en relación con las diferentes representaciones pictóricas del jardín, conservadas tanto en grabados o acuarelas como en pinturas murales. A partir de toda esta información se pretende valorar su utilización en las visitas de diferentes legados diplomáticos extranjeros. En concreto, se intenta comprobar que los palacios europeos se utilizaron eminentemente para impresionar a las misiones orientales, y no tanto a las occidentales.

  2. S. AKÇA1,*, A. Yu. KONOBEYEV2, U. FISCHER2

    Directory of Open Access Journals (Sweden)

    S. Akça

    2014-12-01

    Full Text Available Nükleer model hesaplamaları ve mevcut deneysel dataların analizinden yararlanılarak 3 GeV’e kadar protonlarla ışınlanan Pb hedefinin değerlendirilmiş p,d, t, 3He, ve 4He üretim tesir kesiti dataları elde edilmiştir. Gaz üretim tesir kesiti hesaplamaları intranükleer cascade model, denge-öncesi exciton model, geometri bağımlı hibrit model, Weisskopf-Ewing model, ve Hauser-Feshbach modelleri kullanan CASCADE, TALYS, ALICE/ASH kodları ile yapılmıştır. Değerlendirme KIT/INR’de geliştirilen BEKED kod paketindeki istatistiksel metodlar kullanılarak gerçekleştirilmiştir

  3. Multi-GPU-based Swendsen-Wang multi-cluster algorithm with reduced data traffic

    Science.gov (United States)

    Komura, Yukihiro

    2015-10-01

    The computational performance of multi-GPU applications can be degraded by the data communication between each GPU. To realize high-speed computation with multiple GPUs, we should minimize the cost of this data communication. In this paper, I propose a multiple GPU computing method for the Swendsen-Wang (SW) multi-cluster algorithm that reduces the data traffic between each GPU. I realize this reduction in data traffic by adjusting the connection information between each GPU in advance. The code is implemented on the large-scale open science TSUBAME 2.5 supercomputer, and its performance is evaluated using a simulation of the three-dimensional Ising model at the critical temperature. The results show that the data communication between each GPU is reduced by 90%, and the number of communications between each GPU decreases by about half. Using 512 GPUs, the computation time is 0.005 ns per spin update at the critical temperature for a total system size of N =40963.

  4. Somatic embryogenesis and enhanced shoot organogenesis in Metabriggsia ovalifolia W. T. Wang

    Science.gov (United States)

    Ouyang, Yao; Chen, Yulu; Lü, Jinfeng; Teixeira da Silva, Jaime A.; Zhang, Xinhua; Ma, Guohua

    2016-01-01

    An efficient protocol providing a dual regeneration pathway via direct shoot organogenesis and somatic embryogenesis for an endangered species, Metabriggsia ovalifolia W. T. Wang, was established from leaf explants. When applied at 2.5 μM, the cytokinins 6-benzyladenine (BA) or thidiazuron (TDZ) and the auxins indole-3-butyric acid (IBA), α-naphthaleneacetic acid (NAA) and indole-3-acetic acid (IAA) could induce shoots when on basal Murashige and Skoog (MS) medium. BA and TDZ could induce more adventitious shoots (19.1 and 31.2/explant, respectively) than NAA (4.6/explant), IBA (5.7/explant) or IAA (6.4/explant). BA and TDZ at 5–10 μM could induce both shoots and somatic embryos. A higher concentration of TDZ (25 μM) induced only somatic embryos (39.8/explant). The same concentration of BA induced both adventitious shoots (23.6/explant) and somatic embryos (9.7/explant). Thus, somatic embryogenesis in this plant needs a high cytokinin concentration (BA; TDZ), as evidenced by histology. Somatic embryos germinated easily when left on the same media, but formed adventitious roots in two weeks on MS supplemented with 0.5 μM NAA, 0.5 μM IBA and 0.1% activated charcoal. Over 93% of plantlets survived following acclimatization and transfer to a mixture of sand and vermiculite (1:1, v/v) in trays. PMID:27090564

  5. Chinese Medicine Bu Xu Hua Yu Recipe for the Regulation of Treg/Th17 Ratio Imbalance in Autoimmune Hepatitis

    Directory of Open Access Journals (Sweden)

    Lei Wang

    2015-01-01

    Full Text Available Objectives. The aim of this study is researching the role of the Regulatory T cell (Treg/T helper cell-17 (Th17 cell ratio imbalance in the pathogenesis of autoimmune hepatitis (AIH and the use of the “Bu Xu Hua Yu” recipe in the treatment of AIH. Materials and Methods. Sixty adult male C57/BL6 mice were divided into six different groups. α-Galcer was injected abdominally for production of the animal models. Liver function tests, histological examinations, liver tissue Regulatory T cell, and T helper cell-17 levels tests were carried out. TGF-β1, IL-10, IL-17, and expression of mRNA and protein levels of Foxp3 and ROR-γt were also assessed. Results. Bu Xu Hua Yu method increased the levels of Regulatory T cell, IL-10, and the expression of Foxp3 (P<0.05 in mice liver tissues. Furthermore, there were decreases in the levels of T helper cell-17, IL-17, and expression of RORγt mRNA and protein (P<0.05. The ratio of Treg/Th17 was increased (P<0.05. Conclusion. Mice with AIH have a Treg/Th17 ratio imbalance. Bu Xu Hua Yu method was able to restore the cellular balance of Treg/Th17 through the regulation of the expression of RORγt and Foxp3 and can play an important role in the treatment of AIH.

  6. Tang Wang Ming Mu Granule Attenuates Diabetic Retinopathy in Type 2 Diabetes Rats

    Science.gov (United States)

    Chen, Mingxia; Lv, Haibo; Gan, Jiakuan; Ren, Junguo; Liu, Jianxun

    2017-01-01

    Aims: This study aimed to determine the influence of Tang Wang Ming Mu granule (TWMM) on the diabetic retinopathy of diabetic rats. Methods: Male Wistar rats were divided into seven groups: normal control, diabetes model(DM), diabetes with TWMM (3.6, 7.2, and 14.4 g/kg) treatment, the positive control treatment groups of Qi Ming granules and Calcium dobesilate capsules. All rats were treated for 8 weeks. The levels of body weight, fasting blood glucose (FBG) and glycosylated hemoglobin (HbA1c) in blood were measured to evaluate the antihyperglycemic activity of TWMM. Furthermore, malondialdehyde (MDA), intracellular adhesion molecule-1 (ICAM-1) and vascular endothelial growth factor (VEGF) in serum were measured to study effects of TWMM on oxidative stress and inflammatory in DM2 rats. VEGF, JAK/STAT signaling pathway and SOCS3 in retina was detected by immunohistochemistry. Results: TWMM and the positive control drugs Qi Ming and Calcium dobesilate showed a remarkable suppression of retinal neovascularization and amelioration of retinal internal limiting membrane morphology. Moreover, TWMM significantly decreased HbA1c, MDA, ICAM-1, and VEGF levels in serum of diabetic rats. However, Qi Ming granules showed significantly reduced MDA and VEGF levels (P dobesilate showed significantly reduced MDA and ICAM-1levels (P dobesilate significantly increased SOCS3 in retina. Conclusion: Our data suggest that the diabetic retina protective effect of TWMM might be related to antiinflammatory, antioxidative, upregulation of SOCS3 expression, inhibition of the JAK/STAT/VEGF signaling pathway. PMID:29311988

  7. Tang Wang Ming Mu Granule Attenuates Diabetic Retinopathy in Type 2 Diabetes Rats

    Directory of Open Access Journals (Sweden)

    Mingxia Chen

    2017-12-01

    Full Text Available Aims: This study aimed to determine the influence of Tang Wang Ming Mu granule (TWMM on the diabetic retinopathy of diabetic rats.Methods: Male Wistar rats were divided into seven groups: normal control, diabetes model(DM, diabetes with TWMM (3.6, 7.2, and 14.4 g/kg treatment, the positive control treatment groups of Qi Ming granules and Calcium dobesilate capsules. All rats were treated for 8 weeks. The levels of body weight, fasting blood glucose (FBG and glycosylated hemoglobin (HbA1c in blood were measured to evaluate the antihyperglycemic activity of TWMM. Furthermore, malondialdehyde (MDA, intracellular adhesion molecule-1 (ICAM-1 and vascular endothelial growth factor (VEGF in serum were measured to study effects of TWMM on oxidative stress and inflammatory in DM2 rats. VEGF, JAK/STAT signaling pathway and SOCS3 in retina was detected by immunohistochemistry.Results: TWMM and the positive control drugs Qi Ming and Calcium dobesilate showed a remarkable suppression of retinal neovascularization and amelioration of retinal internal limiting membrane morphology. Moreover, TWMM significantly decreased HbA1c, MDA, ICAM-1, and VEGF levels in serum of diabetic rats. However, Qi Ming granules showed significantly reduced MDA and VEGF levels (P < 0.01, and P < 0.05, respectively, Calcium dobesilate showed significantly reduced MDA and ICAM-1levels (P < 0.01 and P < 0.05, respectively in serum. All drug- treated DM2 rats showed significantly lower levels of VEGF, JAK2, P-JAK2, STAT3, and P-STAT3 in retina than DM group, while TWMM and Calcium dobesilate significantly increased SOCS3 in retina.Conclusion: Our data suggest that the diabetic retina protective effect of TWMM might be related to antiinflammatory, antioxidative, upregulation of SOCS3 expression, inhibition of the JAK/STAT/VEGF signaling pathway.

  8. Letter to the Editor in response to "Our unrequited love for natural ingredients," by Burdock and Wang.

    Science.gov (United States)

    Harman, Christie L; Taylor, Sean V

    2018-01-01

    This letter is in response to the review article "Our unrequited love for natural ingredients" authored by Burdock and Wang in the September edition of FCT. Our purpose is to clarify the procedure used by the FEMA Expert Panel for the safety evaluation of natural flavor complexes, as well as to note and/or correct inaccuracies that we have identified within the article. Copyright © 2017. Published by Elsevier Ltd.

  9. Becoming an International Scientist in South Korea: Ho Wang Lee’s Research Activity about Epidemic Hemorrhagic Fever

    Directory of Open Access Journals (Sweden)

    Miyoung SHIN

    2017-04-01

    Full Text Available In the 1960-70s, South Korea was still in the position of a science latecomer. Although the scientific research environment in South Korea at that time was insufficient, there was a scientist who achieved outcomes that could be recognized internationally while acting in South Korea. He was Ho Wang Lee(1928~ who found Hantann Virus that causes epidemic hemorrhagic fever for the first time in the world. It became a clue to identify causative viruses of hemorrhagic diseases that were scattered here and there throughout the world. In addition, these outcomes put Ho Wang Lee on the global center of research into epidemic hemorrhagic fever. This paper examines how a Korean scientist who was in the periphery of virology could go into the central area of virology. Also this article shows the process through which the virus found by Ho Wang Lee was registered with the international academia and he proceeded with follow-up research based on this progress to reach the level at which he generalized epidemic hemorrhagic fever related studies throughout the world. While he was conducting the studies, experimental methods that he had never experienced encountered him as new difficulties. He tried to solve the new difficulties faced in his changed status through devices of cooperation and connection. Ho Wang Lee’s growth as a researcher can be seen as well as a view of a researcher that grew from a regional level to an international level and could advance from the area of non-mainstream into the mainstream. This analytic tool is meaningful in that it can be another method of examining the growth process of scientists in South Korea or developing countries.

  10. Transcriptomic Profiling Reveals Complex Molecular Regulation in Cotton Genic Male Sterile Mutant Yu98-8A.

    Directory of Open Access Journals (Sweden)

    Weiping Fang

    Full Text Available Although cotton genic male sterility (GMS plays an important role in the utilization of hybrid vigor, its precise molecular mechanism remains unclear. To characterize the molecular events of pollen abortion, transcriptome analysis, combined with histological observations, was conducted in the cotton GMS line, Yu98-8A. A total of 2,412 genes were identified as significant differentially expressed genes (DEGs before and during the critical pollen abortion stages. Bioinformatics and biochemical analysis showed that the DEGs mainly associated with sugars and starch metabolism, oxidative phosphorylation, and plant endogenous hormones play a critical and complicated role in pollen abortion. These findings extend a better understanding of the molecular events involved in the regulation of pollen abortion in genic male sterile cotton, which may provide a foundation for further research studies on cotton heterosis breeding.

  11. Si/Ge intermixing during Ge Stranski–Krastanov growth

    Directory of Open Access Journals (Sweden)

    Alain Portavoce

    2014-12-01

    Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.

  12. Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors.

    Science.gov (United States)

    Tang, Jianshi; Wang, Chiu-Yen; Xiu, Faxian; Hong, Augustin J; Chen, Shengyu; Wang, Minsheng; Zeng, Caifu; Yang, Hong-Jie; Tuan, Hsing-Yu; Tsai, Cho-Jen; Chen, Lih Juann; Wang, Kang L

    2010-12-17

    In this study, we report on the formation of a single-crystalline Ni(2)Ge/Ge/Ni(2)Ge nanowire heterostructure and its field effect characteristics by controlled reaction between a supercritical fluid-liquid-solid (SFLS) synthesized Ge nanowire and Ni metal contacts. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies reveal a wide temperature range to convert the Ge nanowire to single-crystalline Ni(2)Ge by a thermal diffusion process. The maximum current density of the fully germanide Ni(2)Ge nanowires exceeds 3.5 × 10(7) A cm(-2), and the resistivity is about 88 μΩ cm. The in situ reaction examined by TEM shows atomically sharp interfaces for the Ni(2)Ge/Ge/Ni(2)Ge heterostructure. The interface epitaxial relationships are determined to be [Formula: see text] and [Formula: see text]. Back-gate field effect transistors (FETs) were also fabricated using this low resistivity Ni(2)Ge as source/drain contacts. Electrical measurements show a good p-type FET behavior with an on/off ratio over 10(3) and a one order of magnitude improvement in hole mobility from that of SFLS-synthesized Ge nanowire.

  13. Comment on "Parametric Instability Induced by X-Mode Wave Heating at EISCAT" by Wang et al. (2016)

    Science.gov (United States)

    Blagoveshchenskaya, N. F.; Borisova, T. D.; Yeoman, T. K.

    2017-12-01

    In their recent article Wang et al. (2016) analyzed observations from EISCAT (European Incoherent Scatter) Scientific Association Russian X-mode heating experiments and claimed to explain the potential mechanisms for the parametric decay instability (PDI) and oscillating two-stream instability (OTSI). Wang et al. (2016) claim that they cannot separate the HF-enhanced plasma and ion lines excited by O or X mode in the EISCAT UHF radar spectra. Because of this they distinguished the parametric instability excited by O-/X-mode heating waves according to their different excitation heights. Their reflection heights were determined from ionosonde records, which provide a rough measure of excitation altitudes and cannot be used for the separation of the O- and X-mode effects. The serious limitation in their analysis is the use of a 30 s integration time of the UHF radar data. There are also serious disagreements between their analysis and the real observational facts. The fact is that it is the radical difference in the behavior of the X- and O-mode plasma and ion line spectra derived with a 5 s resolution, which provides the correct separation of the X- and O-mode effects. It is not discussed and explained how the parallel component of the electric field under X-mode heating is generated. Apart from the leakage to the O mode, results by Wang et al. (2016) do not explain the potential mechanisms for PDI and OTSI and add nothing to understanding the physical factors accounting for the parametric instability generated by an X-mode HF pump wave.

  14. ¿Cómo podemos usar el móvil para comunicarnos mediante el pensamiento? Entrevista con Yijun Wang

    Directory of Open Access Journals (Sweden)

    Ángel Correa

    2011-01-01

    Full Text Available Un equipo de neurocientíficos ha desarrollado una interfaz cerebro ordenador basada en un teléfono móvil. Las personas con movilidad reducida podrían beneficiarse de este innovador sistema en un futuro próximo. En el experimento que aparece en la fotografía de portada, el participante utiliza únicamente su pensamiento para marcar un número de teléfono. Ciencia Cognitiva ha entrevistado al Dr. Yijun Wang, ingeniero biomédico de la Universidad de California en San Diego, que trabaja en este proyecto.

  15. 2-(p-Hydroxybenzylindoles - Side Products Formed Upon Cleavage of Indole Derivatives from Carboxylated Wang Polymer - an NMR Study

    Directory of Open Access Journals (Sweden)

    Jarl E.S. Wikberg

    2003-10-01

    Full Text Available Treatment of carboxylated Wang polymer attached to a 2-unsubstituted indole derivative with a trifluoroacetic acid based mixture resulted in a side reaction: p-hydroxybenzylation at the 2-position of the indole ring. The structure of the resulting N-3-aminopropyl-N-benzyl-4-[2-(4-hydroxybenzyl-1H-indol-3-yl]-butyramide trifluoroacetate was ascertained by a full assignment of its 1H- and 13C-NMR spectra. The side reaction could be suppressed by the use of 1,2-ethanedithiol in high concentrations (16 %.

  16. BOOKPLATES, OWNERS’ RECORDINGS AND DEDICATORY INSCRIPTIONS ON THE BOOKS FROM THE BOOK COLLECTION OF THE MATHEMATICIAN I. YU. TIMTCHENKO

    Directory of Open Access Journals (Sweden)

    О. В. Полевщикова

    2015-09-01

    Full Text Available The professor of Novorossiysky (Odessa University I. Yu. Timchenko (1863-1939 managed to collect a remarkable library on the history of Mathematics which contained primarily antiquarian books including incunabula and 16th century editions. Various aspects of this valuabe book collection have been studied lately. Books from this dispersed collection have been revealed and examined de visu. Their cataloguing incudes the description of individual book copies in view of their provenance. The purpose of the article is to provide the information on a complex of owners’ recordings and dedicatory inscriptions as well as bookplates left on the books making an attempt to trace the fate of the copies incorporated in the library of the Odessa mathematician. The information collected is considered in the context of the history of Mathematics. Many may characterise both direct and indirect expressions of the readers’ interests in books and reading. The study of provenance records demonstrate that the copies acquired by professor Timchenko used to be in the libraries of a number of men of science – mathematicians, physicists, philologists, etc. The findings of this article enable to enlarge the database of provenance making the practical value and results of the research.

  17. Ancient Chinese Formula Qiong-Yu-Gao Protects Against Cisplatin-Induced Nephrotoxicity Without Reducing Anti-tumor Activity.

    Science.gov (United States)

    Teng, Zhi-Ying; Cheng, Xiao-Lan; Cai, Xue-Ting; Yang, Yang; Sun, Xiao-Yan; Xu, Jin-Di; Lu, Wu-Guang; Chen, Jiao; Hu, Chun-Ping; Zhou, Qian; Wang, Xiao-Ning; Li, Song-Lin; Cao, Peng

    2015-10-29

    Cisplatin is a highly effective anti-cancer chemotherapeutic agent; however, its clinical use is severely limited by serious side effects, of which nephrotoxicity is the most important. In this study, we investigated whether Qiong-Yu-Gao (QYG), a popular traditional Chinese medicinal formula described 840 years ago, exhibits protective effects against cisplatin-induced renal toxicity. Using a mouse model of cisplatin-induced renal dysfunction, we observed that pretreatment with QYG attenuated cisplatin-induced elevations in blood urea nitrogen and creatinine levels, ameliorated renal tubular lesions, reduced apoptosis, and accelerated tubular cell regeneration. Cisplatin-mediated elevations in tumor necrosis factor alpha (TNF-α) mRNA, interleukin-1 beta (IL-1β) mRNA, and cyclooxygenase-2 (COX-2) protein in the kidney were also significantly suppressed by QYG treatment. Furthermore, QYG reduced platinum accumulation in the kidney by decreasing the expression of copper transporter 1 and organic cation transporter 2. An in vivo study using implanted Lewis lung cancer cells revealed that concurrent administration of QYG and cisplatin did not alter the anti-tumor activity of cisplatin. Our findings suggest that the traditional Chinese medicinal formula QYG inhibits cisplatin toxicity by several mechanisms that act simultaneously, without compromising its therapeutic efficacy. Therefore, QYG may be useful in the clinic as a protective agent to prevent cisplatin-induced nephrotoxicity.

  18. Real space mapping of Yu-Shiba-Rusinov states of an extended magnetic scatterer on a conventional superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Etzkorn, Markus; Eltschka, Matthias; Jaeck, Berthold; Topp, Andreas; Ast, Christian R. [Max-Planck-Institute for Solid State Research, 70569 Stuttgart (Germany); Kern, Klaus [Max-Planck-Institute for Solid State Research, 70569 Stuttgart (Germany); Ecole Polytechnique Federale de Lausanne, 1015 Lausanne (Switzerland)

    2016-07-01

    The interaction of a local magnetic impurity with a superconductor causes the formation of Yu-Shiba-Rusinov (YSR)states in the vicinity of the impurity. These have recently received increasing attention in the context of Majorana Fermions and other exotic states that might be created from the mutual interplay. YSR states have been extensively studied by scanning tunneling microscopy and so far have been discussed mainly in the limit of point scattering impurities. Here we present our investigations of the local properties of single magnetic Copper-Phthalocynane molecules on the (5x1) reconstructed, superconducting V(100) surface measured at 15 mK temperature. We find very intense YSR states with energies that depend on the precise absorbtion geometry of the molecule. At the same time we find no indication of a local suppression of the superconducting gap around the impurity. We follow the state evolution in real space for about 3 nm corresponding to about three orders of magnitude in spectral intensity. The spectra display rich structure with local variations in the electron-hole asymmetries. The observed intensity changes in the spectra can not be described on the basis of a single point like scattering potential.

  19. Ge/SiGe superlattices for nanostructured thermoelectric modules

    Energy Technology Data Exchange (ETDEWEB)

    Chrastina, D., E-mail: daniel@chrastina.net [L-NESS Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy); Cecchi, S. [L-NESS Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy); Hague, J.P. [Department of Physical Sciences, The Open University, Walton Hall, Milton Keynes, MK7 6AA (United Kingdom); Frigerio, J. [L-NESS Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy); Samarelli, A.; Ferre–Llin, L.; Paul, D.J. [School of Engineering, University of Glasgow, Oakfield Avenue, Glasgow, G12 8LT (United Kingdom); Müller, E. [Electron Microscopy ETH Zurich (EMEZ), ETH-Zürich, CH-8093 (Switzerland); Etzelstorfer, T.; Stangl, J. [Institut für Halbleiter und Festkörperphysik, Universität Linz, A-4040 Linz (Austria); Isella, G. [L-NESS Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy)

    2013-09-30

    Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices.

  20. 75 FR 47318 - GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and...

    Science.gov (United States)

    2010-08-05

    ... COMMISSION GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and.... Applicants: GE Asset Management Incorporated (``GEAM'') and GE Investment Distributors, Inc. (``GEID... Management, Office of Investment Company Regulation). SUPPLEMENTARY INFORMATION: The following is a temporary...

  1. 12 GeV Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    None

    2017-01-01

    To expand the opportunity for discovery, Jefferson Lab is upgrading its facility by doubling the maximum energy of CEBAF's electron beam from 6 billion electron volts (GeV) to 12 billion electron volts (GeV), constructing a new experimental hall and upgrading its three existing experimental halls.

  2. All-Russian Сonference “Methodological and Applied Problems of Clinical Psychology. Polyakov Readings to the 90th Anniversary of Yu.F. Polyakov”

    OpenAIRE

    none

    2018-01-01

    Moscow State University of Psychology & Education and Mental Health Research Center invites to take part in the All-Russian scientific & practical conference with international participation Methodological and Applied Problems of Clinical Psychology. Polyakov Readings to the 90th Anniversary of Yu. F. Polyakov. Conference will be held on March 15–16, 2018. Conference Venue: March 15 – Mental Health Research Center (Moscow, Kashirskoe sh., 34) March 16 – Moscow State University of Psychology &...

  3. Immunomodulatory Effect of Chinese Herbal Medicine Formula Sheng-Fei-Yu-Chuan-Tang in Lipopolysaccharide-Induced Acute Lung Injury Mice

    OpenAIRE

    Chia-Hung Lin; Ching-Hua Yeh; Li-Jen Lin; Shulhn-Der Wang; Jen-Shu Wang; Shung-Te Kao

    2013-01-01

    Traditional Chinese medicine formula Sheng-Fei-Yu-Chuan-Tang (SFYCT), consisting of 13 medicinal plants, was used to treat patients with lung diseases. This study investigated the immunoregulatory effect of SFYCT on intratracheal lipopolysaccharides- (LPS-) challenged acute lung injury (ALI) mice. SFYCT attenuated pulmonary edema, macrophages, and neutrophils infiltration in the airways. SFYCT decreased inflammatory cytokines, including tumor necrosis factor- ? (TNF ? ), interleukin-1 ? , and...

  4. High-plasticity heat-resistant 03Kh14G16N6Yu-type steels with heat-and deformation-resistant austenite

    Science.gov (United States)

    Blinov, V. M.; Bannykh, I. O.; Zvereva, T. N.

    2008-08-01

    The structure and mechanical properties of 03Kh14G16N6Yu-type austenitic steels alloyed by molybdenum, tungsten, vanadium, and zirconium are studied after normalization at 1075°C and long-term holding at 500 700°C. The chemical composition of these steels ensures the resistance of their austenite to the martensitic transformation in the temperature range from 1200 to -196°C and during cold plastic deformation at a reduction of up to 60%. The best combination of the mechanical and technological properties is achieved in a 03Kh15G17N6YuVF steel with 0.08% W and 0.12% V. Long-term (up to 1000 h) holdings at 550 750°C do not cause the precipitation of carbide, nitride, and intermetallic phases in this steel. The long-term strength of the 03Kh15G17N6YuVF steel at temperatures up to 650°C is comparable with and its plasticity and impact toughness are higher than those of high-nickel Kh16N9M2 and Kh16N12M2 steels, which are applied in the main parts of electric power installations.

  5. Effect of Xiao-tan-jie-yu Prescription on sleep quality of soldiers acute exposure to high altitude

    Directory of Open Access Journals (Sweden)

    Yu-xing YANG

    2016-10-01

    Full Text Available Objective  To observe the efficacy of Xiao-tan-jie-yu prescription (XTJYF on sleep quality of the soldiers who acutely exposed to western area of high altitude. Methods  In this prospective, completely randomized, parallel, placebo-controlled study, 550 soldiers acutely exposed to western area of high altitude were investigated by the Pittsburgh Sleep Quality Index (PSQI, 100 soldiers with sleep disorder were selected and divided into two groups (50 each: treatment group received TCM XTJYF therapy and control group was treated with placebo. After 2 weeks' treatment, PSQI total score and respective factor scores before and after treatment were assessed, and clinical therapeutic efficacy and adverse reactions were observed. Results  The PSQI total score and respective factor scores of these soldiers were significantly higher than those of normal adults, but significantly lower than those of insomnia patients, while their sleep disorder factor score was significantly higher compared with insomnia patients. XTJYF reduced the total score and some factor scores (subjective sleep quality, time for initiating sleep, total sleep time, and sleep efficiency for PSQI in the soldiers with sleep disorder, and the overall response rate was 91.49% which is higher than those in the placebo control group (P<0.05 or 0.01, without toxic side effects. Conclusions  The sleep quality of soldiers who acutely exposed to western area of high altitude in China is not high, and XTJYF may safely and effectively improve the sleep quality. DOI: 10.11855/j.issn.0577-7402.2016.10.15

  6. All-atom simulation study of protein PTH(1-34) by using the Wang-Landau sampling method

    Science.gov (United States)

    Kim, Seung-Yeon; Kwak, Wooseop

    2014-12-01

    We perform simulations of the N-terminal 34-residue protein fragment PTH(1-34), consisting of 581 atoms, of the 84-residue human parathyroid hormone by using the all-atom ECEPP/3 force field and the Wang-Landau sampling method. Through a massive high-performance computation, the density of states and the partition function Z( T), as a continuous function of T, are obtained for PTH(1-34). From the continuous partition function Z( T), the partition function zeros of PTH(1-34) are evaluated for the first time. From both the specific heat and the partition function zeros, two characteristic transition temperatures are obtained for the all-atom protein PTH(1-34). The higher transition temperature T 1 and the lower transition temperature T 2 of PTH(1-34) can be interpreted as the collapse temperature T θ and the folding temperature T f , respectively.

  7. Smoke (Paul Auster et Wayne Wang, 1995 : une œuvre à la croisée des arts

    Directory of Open Access Journals (Sweden)

    Delphine Letort

    2011-04-01

    Full Text Available The adaptation of the short story entitled “Auggie Wren’s Christmas Story” (1990 gathered the writer Paul Auster and the director Wayne Wang around a film project that allowed them to share their artistic practices in a collaborative work. This paper examines the question that underpins the narrative of the short-story by grappling with the appropriations of the real in other artistic modes. Paul Auster’s first encounter with the cinema points out the convergence between aural writing and cinematic writing, evoked through the double figure of the writer and that of the tale-teller/photographer in both the film and the short story.L’adaptation de la nouvelle « Auggie Wren’s Christmas Story » (1990 réunit l’écrivain Paul Auster et le réalisateur Wayne Wang autour d’un projet qui leur permit de croiser leurs pratiques artistiques dans un travail de collaboration. Cet article prolonge le questionnement artistique qui sous-tend le récit de la nouvelle en interrogeant les modalités de l’appropriation du réel par d’autres arts. La première rencontre entre Paul Auster et le cinéma met en relief les points de convergence entre écriture verbale et écriture cinématographique, évoqués autour de la double figure de l’écrivain et du conteur/photographe dans le film et dans la nouvelle.

  8. Uniaxially stressed Ge:Ga and Ge:Be

    Energy Technology Data Exchange (ETDEWEB)

    Dubon, Jr., Oscar Danilo [Univ. of California, Berkeley, CA (United States)

    1992-12-01

    The application of a large uniaxial stress to p-type Ge single crystals changes the character of both the valence band and the energy levels associated with the acceptors. Changes include the splitting of the fourfold degeneracy of the valence band top and the reduction of the ionization energy of shallow acceptors. In order to study the effect of uniaxial stress on transport properties of photoexcited holes, a variable temperature photo-Hall effect system was built in which stressed Ge:Ga and Ge:Be could be characterized. Results indicate that stress increases the lifetime and Hall mobility of photoexcited holes. These observations may help further the understanding of fundamental physical processes that affect the performance of stressed Ge photoconductors including the capture of holes by shallow acceptors.

  9. Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

    Science.gov (United States)

    Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

    2016-04-01

    A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

  10. H.E. Professor Wang Liheng, Minister of Aviation of the People's Republic of China, President, China Aerospace Science & Technology Corporation

    CERN Multimedia

    Patrice Loïez

    2001-01-01

    H. E. Professor Wang Liheng, Minister of Aviation, and President, China Aerospace Science & Technology Corporation, People's Republic of China (2nd from left) with (from left to right) Professor Hans Hofer, Professor Roger Cashmore, Research Director for Collider Programmes, Professor Samuel C. C. Ting, CERN and Professor Lei Gang, Secretary to the Minister, September 2001.

  11. All-atom simulation study of protein PTH(1-34) by using the Wang-Landau sampling method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seung-Yeon [Korea National University of Transportation, Chungju (Korea, Republic of); Kwak, Woo-Seop [Chosun University, Gwangju (Korea, Republic of)

    2014-12-15

    We perform simulations of the N-terminal 34-residue protein fragment PTH(1-34), consisting of 581 atoms, of the 84-residue human parathyroid hormone by using the all-atom ECEPP/3 force field and the Wang-Landau sampling method. Through a massive high-performance computation, the density of states and the partition function Z(T), as a continuous function of T, are obtained for PTH(1-34). From the continuous partition function Z(T), the partition function zeros of PTH(1-34) are evaluated for the first time. From both the specific heat and the partition function zeros, two characteristic transition temperatures are obtained for the all-atom protein PTH(1-34). The higher transition temperature T{sub 1} and the lower transition temperature T{sub 2} of PTH(1-34) can be interpreted as the collapse temperature T{sub θ} and the folding temperature T{sub f} , respectively.

  12. Wang--Landau algorithm for entropic sampling of arch-based microstates in the volume ensemble of static granular packings

    Directory of Open Access Journals (Sweden)

    D. Slobinsky

    2015-03-01

    Full Text Available We implement the Wang-Landau algorithm to sample with equal probabilities the static configurations of a model granular system. The "non-interacting rigid arch model" used is based on the description of static configurations by means of splitting the assembly of grains into sets of stable arches. This technique allows us to build the entropy as a function of the volume of the packing for large systems. We make a special note of the details that have to be considered when defining the microstates and proposing the moves for the correct sampling in these unusual models. We compare our results with previous exact calculations of the model made at moderate system sizes. The technique opens a new opportunity to calculate the entropy of more complex granular models. Received: 19 January 2015, Accepted: 25 February 2015; Reviewed by: M. Pica Ciamarra, Nanyang Technological University, Singapore; Edited by: C. S. O'Hern; DOI: http://dx.doi.org/10.4279/PIP.070001 Cite as: D Slobinsky, L A Pugnaloni, Papers in Physics 7, 070001 (2015

  13. “Call Me an Innocent Criminal”: Dual Discourse, Gender, and “Chinese” America in Nie Hualing’s Sangqing yu Taohong/Mulberry and Peach

    Directory of Open Access Journals (Sweden)

    Serena Fusco

    2012-06-01

    Full Text Available This essay discusses Nie Hualing’s novel Sangqing yu Taohong (Mulberry and Peach: Two Women of China as a literary text that intensely engages Chinese identity and Chineseness as a global, transnational cultural phenomenon, while at the same time narrating a story of migration to the US that spurs the emergence (within the text of some of the most localized, politically charged concerns of Asian American cultural discourse. While the publication of Nie’s novel coincides with the initial articulations of Asian American identity in the context of political activism, Sangqing yu Taohong/Mulberry and Peach also anticipates the growing interest for contextualizing the Asian American experience as a transnational phenomenon. In its representation of Chinese migration to America and female sexuality as issues that stretch ethical and political boundaries and blur the distinction between private and public discourses, this novel constructs identity as both politicized and uncontainable, anticipating, again, some key components of Asian American cultural discourse since the 1990s. This excess of signification reproduces the tension between “model minorities” and “bad subjects” that makes Asian American discourse inescapably political. This political nature, in turn, intertwines public and private frameworks of reference, as well as ethnic, national, and transnational dimensions of signification.

  14. Band calculation of lonsdaleite Ge

    Science.gov (United States)

    Chen, Pin-Shiang; Fan, Sheng-Ting; Lan, Huang-Siang; Liu, Chee Wee

    2017-01-01

    The band structure of Ge in the lonsdaleite phase is calculated using first principles. Lonsdaleite Ge has a direct band gap at the Γ point. For the conduction band, the Γ valley is anisotropic with the low transverse effective mass on the hexagonal plane and the large longitudinal effective mass along the c axis. For the valence band, both heavy-hole and light-hole effective masses are anisotropic at the Γ point. The in-plane electron effective mass also becomes anisotropic under uniaxial tensile strain. The strain response of the heavy-hole mass is opposite to the light hole.

  15. 76 FR 30573 - Airworthiness Directives; General Electric Company (GE) GE90-110B1 and GE90-115B Turbofan Engines

    Science.gov (United States)

    2011-05-26

    ... Electric Company (GE) GE90-110B1 and GE90-115B turbofan engines with high-pressure compressor (HPC) stages... Federal Aviation Administration 14 CFR Part 39 RIN 2120-AA64 Airworthiness Directives; General Electric Company (GE) GE90- 110B1 and GE90-115B Turbofan Engines AGENCY: Federal Aviation Administration (FAA), DOT...

  16. VizieR Online Data Catalog: Multicolor photometry of 135 star clusters in M31 (Wang+, 2012)

    Science.gov (United States)

    Wang, S.; Ma, J.; Fan, Z.; Wu, Z.; Zhang, T.; Zou, H.; Zhou, X.

    2014-01-01

    The sample of star clusters in this paper is selected from Caldwell et al. (2009, cat. J/AJ/137/94; 2011, cat. J/AJ/141/61). Our multicolor photometric data are from the GALEX FUV and NUV, broadband UBVRI, SDSS ugriz, 15 intermediate-band filters of Beijing-Arizona-Taipei-Connecticut (BATC) Multicolor Sky Survey, and 2MASS JHKs, which constitute the Spectral Energy Distributions (SEDs) covering 1538-20000Å. The M31 field is part of a galaxy calibration program of Beijing-Arizona-Taipei-Connecticut (BATC) Multicolor Sky Survey (Zhou et al., 1995-2005, cat. II/262). The BATC program uses the 60/90cm Schmidt Telescope at the Xinglong Station of the National Astronomical Observatories, Chinese Academy of Sciences (NAOC). This system includes 15 intermediate-band filters, covering a range of wavelength from 3000 to 10000Å (see Fan et al., 1996, cat. J/AJ/112/628, for details). Before 2006 February, a Ford Aerospace 2k*2k thick CCD camera was applied, which has a pixel size of 15μm and a field of view of 58'*58', resulting in a resolution of 1.67"/pixel. After 2006 February, a new 4k*4k CCD with a pixel size of 12μm was used, with a resolution of 1.36"/pixel (Fan et al., 2009RAA.....9..993F). We obtained 143.9hr of imaging of the M31 field covering about 6deg2, consisting of 447 images, through the set of 15 filters in five observing runs from 1995 to 2008, spanning 13 years (see Fan et al., 2009RAA.....9..993F; Wang et al., 2010, cat. J/AJ/139/1438, for details). (3 data files).

  17. Silicon-germanium interdiffusion in strained Ge/SiGe multiple quantum well structures

    Science.gov (United States)

    Liu, Xue-Chao; Leadley, D. R.

    2010-12-01

    A strain-symmetrized Ge/Si0.35Ge0.65 multiple quantum well (MQW) structure has been grown on a relaxed Si0.2Ge0.8 virtual substrate by reduced pressure chemical vapour deposition. The as-grown Ge/Si0.35Ge0.65 MQW structure with one period thickness of 25 nm (14 nm/11 nm) was annealed in nitrogen ambient at different temperatures from 550 to 750 °C. The thermal stability and interdiffusion properties were studied by high-resolution x-ray diffraction. No obvious interdiffusion or strain relaxation in the Ge/Si0.35Ge0.65 MQW structure was observed for annealing temperatures strained Ge/Si0.35Ge0.65 MQW structure with an average Ge composition of 85 at%.

  18. Understanding and engineering of NiGe/Ge junction formed by phosphorus ion implantation after germanidation

    Energy Technology Data Exchange (ETDEWEB)

    Oka, Hiroshi, E-mail: oka@asf.mls.eng.osaka-u.ac.jp; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji [Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2014-08-11

    Modulation of the effective electron Schottky barrier height (eSBH) of NiGe/Ge contacts induced by phosphorus ion implantation after germanide formation was investigated by considering local inhomogeneity in the eSBH. Systematic studies of NiGe/Ge contact devices having various germanide thicknesses and ion implantation areas indicated the threshold dopant concentration at the NiGe/Ge interface required for eSBH modulation and negligible dopant diffusion even at NiGe/Ge interface during drive-in annealing, leading to variation in the eSBH between the bottom and sidewall portions of the NiGe regions. Consequently, this method makes it possible to design source/drain contacts with low-resistivity Ohmic and ideal rectifying characteristics for future Ge-based transistors.

  19. SPEIR: A Ge Compton Camera

    Energy Technology Data Exchange (ETDEWEB)

    Mihailescu, L; Vetter, K M; Burks, M T; Hull, E L; Craig, W W

    2004-02-11

    The SPEctroscopic Imager for {gamma}-Rays (SPEIR) is a new concept of a compact {gamma}-ray imaging system of high efficiency and spectroscopic resolution with a 4-{pi} field-of-view. The system behind this concept employs double-sided segmented planar Ge detectors accompanied by the use of list-mode photon reconstruction methods to create a sensitive, compact Compton scatter camera.

  20. Renewable energy research at GE

    Energy Technology Data Exchange (ETDEWEB)

    Naik, R.; Kolwalkar, A. [GE Global Research, Bangalore (India)

    2010-07-01

    Renewable energy sources and distributed generation will play a key role in transforming the power grid of the future. This presentation discussed some of the key renewable sources that General Electric (GE) is involved in, including wind, solar and biomass. Distributed generation has become an efficient and clean alternative to traditional power generation systems. It reduces transmission and distribution system losses while providing enhanced service reliability and quality, improved voltage regulation, and transmission and distribution system congestion relief. This presentation focused on some of the technical challenges and grid interconnection issues that could affect the penetration of such distributed generation systems. GE is developing a controller that manages the complex interactions in a micro grid. The controller combines on-site power generation and stored energy, allowing the micro grid to both function as an isolated unit, making and using its own energy, or interacting with the larger-scale grid to which it is connected. The presentation also made reference to some of the renewable energy demonstration programs that GE was actively pursuing.

  1. Segregation of Ge in B and Ge codoped Czochralski-Si crystal growth

    Energy Technology Data Exchange (ETDEWEB)

    Arivanandhan, Mukannan, E-mail: rmarivu@ipc.shizuoka.ac.jp [Department of Electronics and Materials Science, Graduate School of Engineering, Shizuoka University, Johoku 3-5-1, Naka-Ku, Hamamatsu 432-8011 (Japan); Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Naka-Ku, Hamamatsu 432-8011 (Japan); Gotoh, Raira; Fujiwara, Kozo; Uda, Satoshi [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Hayakawa, Yasuhiro [Department of Electronics and Materials Science, Graduate School of Engineering, Shizuoka University, Johoku 3-5-1, Naka-Ku, Hamamatsu 432-8011 (Japan); Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Naka-Ku, Hamamatsu 432-8011 (Japan)

    2015-08-05

    Highlights: • Effective segregation of Ge in B and Ge codoped Czochralski-Si crystal growth was analyzed. • The equilibrium segregation coefficient of Ge was calculated. • The experimentally results were analytically analyzed using partitioning theory. - Abstract: The segregation of Ge in B and Ge codoped Czochralski (CZ)-Si crystal growth was investigated. The concentration of Ge in heavily Ge codoped CZ-Si was measured by electron probe micro analysis (EPMA) and X-ray fluorescence spectroscopy. The effective segregation coefficient of Ge (k{sub eff}) was calculated by fitting the EPMA data to the normal freezing equation, and by taking the logarithmic ratio of the Ge concentrations at the seed and tail of the ingots (top to bottom approach). The k{sub eff} of Ge increased from 0.30 to 0.55, when the initial Ge concentration in the Si melt (C{sub L(o)}{sup Ge}) was increased from 3 × 10{sup 19} to 3 × 10{sup 21} cm{sup −3}. To avoid cellular growth, the crystal pulling rate was decreased for heavily Ge codoped crystal growth (C{sub L(o)}{sup Ge} > 3 × 10{sup 20} cm{sup −3}). The equilibrium segregation coefficient (k{sub 0}) of Ge was calculated by partitioning theory, and was smaller than the experimentally estimated k{sub eff}. The variation of k{sub eff} from k{sub 0} was discussed based on Ge clustering in the heavily Ge codoped crystal, which led to changes in the bonding and strain energies caused by the incorporation of Ge into Si.

  2. XAS/EXAFS studies of Ge nanoparticles produced by reaction between Mg 2 Ge and GeCl 4

    Science.gov (United States)

    Pugsley, Andrew J.; Bull, Craig L.; Sella, Andrea; Sankar, Gopinathan; McMillan, Paul F.

    2011-09-01

    We present results of an XAS and EXAFS study of the synthesis of Ge nanoparticles formed by a metathesis reaction between Mg 2Ge and GeCl 4 in diglyme (diethylene glycol dimethyl ether). The progress of the formation reaction and the products formed at various stages in the processing was characterised by TEM and optical spectroscopy as well as in situ XAS/EXAFS studies using specially designed reaction cells.

  3. High Mobility Transport Layer Structures for Rhombohedral Si/Ge/SiGe Devices

    Science.gov (United States)

    Choi, Sang Hyouk (Inventor); Park, Yeonjoon (Inventor); King, Glen C. (Inventor); Kim, Hyun-Jung (Inventor); Lee, Kunik (Inventor)

    2017-01-01

    An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.

  4. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

    OpenAIRE

    Khomenkova, L.; Lehninger, D.; O. Kondratenko; Ponomaryov, S.; Gudymenko, O.; Tsybrii, Z.; Yukhymchuk, V.; Kladko, V.; von Borany, J.; Heitmann, J.

    2017-01-01

    Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The ?...

  5. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures.

    Science.gov (United States)

    Khomenkova, L; Lehninger, D; Kondratenko, O; Ponomaryov, S; Gudymenko, O; Tsybrii, Z; Yukhymchuk, V; Kladko, V; von Borany, J; Heitmann, J

    2017-12-01

    Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The "start point" of this process is in the range of 640-700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO2 matrix. The mechanism of phase separation is discussed in detail.

  6. SPEIR: A Ge Compton camera

    Energy Technology Data Exchange (ETDEWEB)

    Mihailescu, L. [Lawrence Livermore National Laboratory, Livermore (United States)]. E-mail: mihailescu1@llnl.gov; Vetter, K.M. [Lawrence Livermore National Laboratory, Livermore (United States); Burks, M.T. [Lawrence Livermore National Laboratory, Livermore (United States); Hull, E.L. [Lawrence Livermore National Laboratory, Livermore (United States); Craig, W.W. [Lawrence Livermore National Laboratory, Livermore (United States)

    2007-01-01

    The SPEctroscopic Imager for{gamma}-Rays (SPEIR) is a Compton scatter {gamma}-ray imaging system of high efficiency and spectroscopic resolution with a 4-{pi} field-of-view. The imaging system consists of double-sided segmented (DSSD) planar Ge detectors, an acquisition system instrumenting the detectors, and a set of data analysis methods. The analysis methods employ event reconstruction algorithms that increase the intrinsic position resolution and granularity of the detectors, and provide photon scattering information relevant for Compton imaging.

  7. Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

    DEFF Research Database (Denmark)

    Lu, Weifang; Li, Cheng; Lin, Guangyang

    2015-01-01

    Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...

  8. GeSn/Ge quantum well photodetectors for short-wave infrared photodetection: experiments and modeling

    Science.gov (United States)

    Tsai, Chia-Ho; Chang, Guo-En

    2017-05-01

    Group-IV GeSn material systems have recently considered as a new material for sensitive photodetection in the short-wave infrared (SWIR) region. The introduction of Sn into Ge can effectively narrow the bandgap energies, thereby extending the absorption edges toward the longer wavelengths and enabling effective photodetection in SWIR region. Here we present an experimental and modeling study of GeSn/Ge quantum well (QW) photodetectors on silicon substrates for effective SRIW photodetection. Epitaxial growth of pseudomorphic GeSn/Ge QW structures was realized on Ge-buffered silicon substrates using low-temperature molecular beam epitaxy. Normal incident GeSn/Ge QW photodetectors were then fabricated and characterized. The optical responsivity experiments demonstrate that the photodetection cutoff wavelengths is extended to beyond 1800 nm, enabling effective photodetection in SWIR spectral region. We then develop theoretical models to calculate the composition-dependent strained electron band structures, oscillation strengths, and optical absorption spectra for the pseudomorphic GeSn/Ge QW structures. The results show that Ge1-xSnx well sandwiched by Ge barriers can achieve a critical type-I alignment at Γ point to provide necessary quantum confinement of carriers. With an increase in the Sn content, the band offsets between the GeSn well and Ge barreirs increases, thus enhancing the oscillation strengths of direct interband transitions. In addition, despite stronger quantum confinement with increasing Sn content, the absorption edge can be effectively shifted to longer wavelengths due to the direct bandgap reduction caused by Sn-alloying. These results suggest that GeSn/Ge QW photodetectors are promising for low-cost, high-performance SWIR photodetection applications.

  9. Epigenetic battle of the sexes. Comment on: ;Epigenetic game theory: How to compute the epigenetic control of maternal-to-zygotic transition; by Qian Wang et al.

    Science.gov (United States)

    Wu, Song

    2017-03-01

    Qian Wang et al. present an interesting framework, named epigenetic game theory, for modeling sex-based epigenetic dynamics during embryogenesis from a new viewpoint of evolutionary game theory [1]. That is, epigenomes of sperms and oocytes may coordinate through either cooperation or competition, or both, to affect the fitness of embryos. The work uses a set of ordinary differential equations (ODEs) to describe longitudinal trajectories of DNA methylation levels in both parental and maternal gametes and their dependence on each other. The insights gained from this review, i.e. dynamic methylation profiles and their interaction are potentially important to many fields, such as biomedicine and agriculture.

  10. Effect of Ge autodoping during III-V MOVPE growth on Ge substrates

    Science.gov (United States)

    Barrutia, Laura; Barrigón, Enrique; García, Iván; Rey-Stolle, Ignacio; Algora, Carlos

    2017-10-01

    During the MOVPE growth of III-V layers on Ge substrates, Ge atoms can be evaporated or etched from the back of the wafer and reach the growth surface, becoming incorporated into the epilayers. This is the so-called Ge autodoping effect, which we have studied through a set of growth experiments of GaInP and Ga(In)As layers lattice matched to Ge substrates, which have been characterized by Secondary Ion Mass Spectroscopy. The role of V/III ratio and growth rate on Ge autodoping has been studied and a MOVPE reactor pre-conditioning prior to the epitaxial growth of III-V semiconductor layers that mitigates this Ge autodoping has been identified. In addition, the use of 2-in. versus 4-in. Ge substrates has been compared and the use of a Si3N4 backside coating for the Ge substrates has been evaluated.

  11. Trap density of GeNx/Ge interface fabricated by electron-cyclotron-resonance plasma nitridation

    Science.gov (United States)

    Fukuda, Yukio; Otani, Yohei; Toyota, Hiroshi; Ono, Toshiro

    2011-07-01

    We have investigated GeNx/Ge interface properties using Si3N4(7 nm)/GeNx(2 nm)/Ge metal-insulator-semiconductor structures fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The interface trap density (Dit) measured by the conductance method is found to be distributed symmetrically in the Ge band gap with a minimum Dit value lower than 3 × 1011 cm-2eV-1 near the midgap. This result may lead to the development of processes for the fabrication of p- and n-Ge Schottky-barrier (SB) source/drain metal-insulator-semiconductor field-effect transistors using chemically and thermally robust GeNx dielectrics as interlayers for SB source/drain contacts and high-κ gate dielectrics.

  12. Influence of Partial Dam Removal on Change of Channel Morphology and Physical Habitats: A Case Study of Yu-Sheng River

    Science.gov (United States)

    Hao Weng, Chung; Yeh, Chao Hsien

    2017-04-01

    The rivers in Taiwan have the characteristic of large slope gradient and fast flow velocity caused by rugged terrain. And Taiwan often aces many typhoons which will bring large rainfall in the summer. In early Taiwan, river management was more focus on flood control, flood protection and disaster reduction. In recent years, the rise of ecological conservation awareness for the precious fish species brings spotlight on the Taiwan salmon (Oncorhynchus masou formosanus) which lives in the river section of this study. In order to make sure ecological corridor continuing, dam removal is the frequently discussed measure in recent years and its impact on environmental is also highly concerned. Since the dam removal may causes severe changes to the river channel, the action of dam removal needs careful evaluation. As one of the endangered species, Taiwan salmon is considered a national treasure of Taiwan and it was originally an offshore migration of the Pacific salmon. After the ice age and geographical isolation, it becomes as an unique subspecies of Taiwan and evolved into landlocked salmon. Now the Taiwan salmon habitats only exists in few upstream creeks and the total number of wild Taiwan salmon in 2015 was about 4,300. In order to expand the connectivity of the fish habitats in Chi-Jia-Wan creek basin, several dam removal projects had completed with good results. Therefore, this paper focuses on the dam removal of Yu-Sheng creek dam. In this paper, a digital elevation model (DEM) of about 1 kilometer channel of the Yu-Sheng creek dam is obtained by unmanned aerial vehicle (UAV). Using CCHE2D model, the simulation of dam removal will reveal the impact on channel morphology. After model parameter identification and verification, this study simulated the scenarios of three historical typhoon events with recurrence interval of two years, fifteen years, and three decades under four different patterns of dam removal to identify the the head erosion, flow pattern, and

  13. Fabrication of high Ge content SiGe-on-insulator with low dislocation density by modified Ge condensation

    Energy Technology Data Exchange (ETDEWEB)

    Ma Xiaobo, E-mail: xiaoboma@mail.sim.ac.cn [Nano Technology Laboratory, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, 865 Changning Road, Shanghai 200050 (China); Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Liu Weili, E-mail: rabbitlwl@mail.sim.ac.cn [Nano Technology Laboratory, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, 865 Changning Road, Shanghai 200050 (China); Chen Chao; Du Xiaofeng; Liu Xuyan [Nano Technology Laboratory, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, 865 Changning Road, Shanghai 200050 (China); Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Song Zhitang [Nano Technology Laboratory, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, 865 Changning Road, Shanghai 200050 (China); Lin Chenglu [Nano Technology Laboratory, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, 865 Changning Road, Shanghai 200050 (China); Shanghai Simgui Technology Co., Ltd, Shanghai 201821 (China)

    2009-06-15

    A SiGe-on-insulator (SGOI) structure with high Ge content and low density of dislocations is fabricated by a modified Ge condensation technique. The formation and elimination of stacking faults during condensation process are analyzed by transmission electron microscopy. A Si{sub 0.19}Ge{sub 0.81}OI substrate is fabricated utilizing two steps of oxidation and intermittent annealing. The time of oxidation or annealing at 900 deg. C is essential for the elimination of stacking faults in high Ge content SGOI substrate. The surface morphology of SGOI is investigated by atomic force microscopy and the defect density is evaluated from wet etching method. After the final condensation, the surface root-mean-square roughness (rms) of SiGe layer is kept below 1 nm and the threading defect density is controlled around 10{sup 4} cm{sup -2}. The smooth surface and integrated lattice structure of SiGe layer indicate that the SGOI is suitable for heteroepitaxial growth of strained Ge, GaAs and III-V compounds.

  14. Silicon-germanium interdiffusion in strained Ge/SiGe multiple quantum well structures

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xuechao; Leadley, D R, E-mail: xuechao.liu@hotmail.co [Department of Physics, The University of Warwick, Coventry, CV4 7AL (United Kingdom)

    2010-12-22

    A strain-symmetrized Ge/Si{sub 0.35}Ge{sub 0.65} multiple quantum well (MQW) structure has been grown on a relaxed Si{sub 0.2}Ge{sub 0.8} virtual substrate by reduced pressure chemical vapour deposition. The as-grown Ge/Si{sub 0.35}Ge{sub 0.65} MQW structure with one period thickness of 25 nm (14 nm/11 nm) was annealed in nitrogen ambient at different temperatures from 550 to 750 {sup 0}C. The thermal stability and interdiffusion properties were studied by high-resolution x-ray diffraction. No obvious interdiffusion or strain relaxation in the Ge/Si{sub 0.35}Ge{sub 0.65} MQW structure was observed for annealing temperatures {<=}600 {sup 0}C, while the onset of interdiffusion occurred as the temperature was increased to above 650 {sup 0}C. The interdiffusion coefficient was obtained by analysing the decay rate of Ge/SiGe periodic satellites in the recorded intensity at temperatures 650-750 {sup 0}C. The extracted activation energy was found to be 3.08 {+-} 0.1 eV for the strained Ge/Si{sub 0.35}Ge{sub 0.65} MQW structure with an average Ge composition of 85 at%.

  15. Thermally induced structural change of a-Ge:H/a-GeNx multilayer structures

    Science.gov (United States)

    Honma, I.; Komiyama, H.; Tanaka, K.

    1989-08-01

    Multilayer structures of a-Ge:H/a-GeNx and a-Ge/a-GeNx were prepared by a reactive-sputtering technique and their structural stability was studied through thermal anneals. High-resolution transmission-electron-microscope analyses show that crystallization takes place only in a-Ge:H(a-Ge) layers without disturbing atomically smooth and uniform a-Ge:H(a-Ge)/ a-GeNx interfaces. The crystallization temperature of a-Ge:H(a-Ge) layers increases with either decreasing thickness of those layers or increasing thickness of a-GeNx layers. The rise in crystallization temperature is most remarkable when the layer thickness becomes smaller than a couple of hundred angstroms. On the basis of the experimental results, the structural stability of multilayer films is discussed in the light of classical nucleation theory using the free-energy change of the system. It is demonstrated that the crystallization temperature is strongly affected both by layer thickness and by the nature of a heterointerface which phenomenologically explains well the experimental observations.

  16. Room Temperature Ferromagnetic Mn:Ge(001

    Directory of Open Access Journals (Sweden)

    George Adrian Lungu

    2013-12-01

    Full Text Available We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001, heated at relatively high temperature (starting with 250 °C. The samples were characterized by low energy electron diffraction (LEED, scanning tunneling microscopy (STM, high resolution transmission electron microscopy (HRTEM, X-ray photoelectron spectroscopy (XPS, superconducting quantum interference device (SQUID, and magneto-optical Kerr effect (MOKE. Samples deposited at relatively elevated temperature (350 °C exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001 crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001. The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

  17. Grateloupia tenuis Wang et Luan sp. nov. (Halymeniaceae, Rhodophyta: A New Species from South China Sea Based on Morphological Observation and rbcL Gene Sequences Analysis

    Directory of Open Access Journals (Sweden)

    Ling Yu

    2013-01-01

    Full Text Available Grateloupia tenuis Wang et Luan sp. nov. is a new species described from Lingshui, Hainan Province, South China Sea. Based on the external form and internal structure, combined with rbcL gene sequence analysis, Grateloupia tenuis is distinct from other Grateloupia species as follows: (1 thalli is slippery and cartilaginous in texture; possess fewer branches, relatively slight main axes, and two or three dichotomous branches; (2 cortex is 5-6 layers; medulla is solid when young, but hollow in old branches; reproductive structures are dispersed in main axes of thalli and lower portions of branchlets; exhibits Grateloupia-type auxiliary cell ampullae; (3 the four studied G. tenuis sequences were positioned in a large Grateloupia clade of Halymeniaceae, which included sister group generitype G. filicina with 68 bp differences; G. tenuis was determined to be a sister taxon to the G. catenata, G. ramosissima, G. orientalis, and G. filiformis subclade. The pairwise distances between G. tenuis and these species were 39 to 50 bp. The sequences of G. tenuis differed by 81–108 bp from the sequences of other samples in Grateloupia; there are 114–133 bp changes between G. tenuis and other genera of Halymeniaceae. In final analysis, we considered Grateloupia tenuis Wang et Luan sp. nov. to be a new species of genus Grateloupia.

  18. Grateloupia ramosa Wang & Luan sp. nov. (Halymeniaceae, Rhodophyta), a new species from China based on morphological evidence and comparative rbcL sequences

    Science.gov (United States)

    Cao, Cuicui; Liu, Miao; Guo, Shaoru; Zhao, Dan; Luan, Rixiao; Wang, Hongwei

    2016-03-01

    Grateloupia ramosa Wang & Luan sp. nov. (Halymeniaceae, Rhodophyta) is newly described from Hainan Province, southern China. The organism has the following morphological features: (1) purplish red, cartilaginous and lubricous thalli 5-10 cm in height; (2) compressed percurrent axes bearing abundant branches with opposite arrangement; (3) claw-like apices on top, constricted to 2-4 cm at the base; (4) cortex consisting of 3-6 layers of elliptical or anomalous cells and a medulla covered by compact medullary filaments; (5) reproductive structures distributed throughout the thallus, especially centralized at the bottom of the end portion of the branches; and (6) 4-celled Carpogonial branches and 3-celled auxiliary-cell branches, both of the Grateloupia-type. The morphological diff erences were supported by molecular phylogenetics based on ribulose-1, 5-bisphosphate carboxylase/oxygenase ( rbcL) gene sequence analysis. There was only a 1 bp divergence between specimens collected from Wenchang and Lingshui of Hainan province. The new species was embedded in the large Grateloupia clade of the Halymeniaceae. The pairwise distances between G. ramosa and other species within Grateloupia ranged from 26 to 105 bp, within pairwise distances of 13-111 bp between species of the large genus Grateloupia in Halymeniaceae. Thus, we propose this new species as G. ramosa Wang & Luan sp. nov.

  19. Grateloupia tenuis Wang et Luan sp. nov. (Halymeniaceae, Rhodophyta): a new species from South China Sea based on morphological observation and rbcL gene sequences analysis.

    Science.gov (United States)

    Yu, Ling; Wang, Hongwei; Luan, Rixiao

    2013-01-01

    Grateloupia tenuis Wang et Luan sp. nov. is a new species described from Lingshui, Hainan Province, South China Sea. Based on the external form and internal structure, combined with rbcL gene sequence analysis, Grateloupia tenuis is distinct from other Grateloupia species as follows: (1) thalli is slippery and cartilaginous in texture; possess fewer branches, relatively slight main axes, and two or three dichotomous branches; (2) cortex is 5-6 layers; medulla is solid when young, but hollow in old branches; reproductive structures are dispersed in main axes of thalli and lower portions of branchlets; exhibits Grateloupia-type auxiliary cell ampullae; (3) the four studied G. tenuis sequences were positioned in a large Grateloupia clade of Halymeniaceae, which included sister group generitype G. filicina with 68 bp differences; G. tenuis was determined to be a sister taxon to the G. catenata, G. ramosissima, G. orientalis, and G. filiformis subclade. The pairwise distances between G. tenuis and these species were 39 to 50 bp. The sequences of G. tenuis differed by 81-108 bp from the sequences of other samples in Grateloupia; there are 114-133 bp changes between G. tenuis and other genera of Halymeniaceae. In final analysis, we considered Grateloupia tenuis Wang et Luan sp. nov. to be a new species of genus Grateloupia.

  20. The summer snow cover anomaly over the Tibetan Plateau and its association with simultaneous precipitation over the mei-yu-baiu region

    Science.gov (United States)

    Liu, Ge; Wu, Renguang; Zhang, Yuanzhi; Nan, Sulan

    2014-07-01

    The summer snow anomalies over the Tibetan Plateau (TP) and their effects on climate variability are often overlooked, possibly due to the fact that some datasets cannot properly capture summer snow cover over high terrain. The satellite-derived Equal-Area Scalable Earth grid (EASE-grid) dataset shows that snow still exists in summer in the western part and along the southern flank of the TP. Analysis demonstrates that the summer snow cover area proportion (SCAP) over the TP has a significant positive correlation with simultaneous precipitation over the mei-yu-baiu (MB) region on the interannual time scale. The close relationship between the summer SCAP and summer precipitation over the MB region could not be simply considered as a simultaneous response to the Silk Road pattern and the SST anomalies in the tropical Indian Ocean and tropical central-eastern Pacific. The SCAP anomaly has an independent effect and may directly modulate the land surface heating and, consequently, vertical motion over the western TP, and concurrently induce anomalous vertical motion over the North Indian Ocean via a meridional vertical circulation. Through a zonal vertical circulation over the tropics and a Kelvin wave-type response, anomalous vertical motion over the North Indian Ocean may result in an anomalous high over the western North Pacific and modulate the convective activity in the western Pacific warm pool, which stimulates the East Asia-Pacific (EAP) pattern and eventually affects summer precipitation over the MB region.

  1. Records of sunspots and aurora candidates in the Chinese official histories of the Yuán and Míng dynasties during 1261-1644

    Science.gov (United States)

    Hayakawa, Hisashi; Tamazawa, Harufumi; Ebihara, Yusuke; Miyahara, Hiroko; Kawamura, Akito Davis; Aoyama, Tadanobu; Isobe, Hiroaki

    2017-08-01

    Records of observations of sunspots and auroras in pre-telescopic historical documents provide useful information about past solar activity both in long-term trends and short-term space weather events. In this study, we present the results of a comprehensive survey of the records of sunspots and aurora candidates in the Yuánshĭ and Míngshĭ, Chinese Official Histories spanning 1261-1368 and 1368-1644, based on continuous observations with well-formatted reportds conducted by contemporary professional astronomers. We then provide a brief comparison of these data with Total Solar Irradiance (TSI) as an indicator of the solar activity during the corresponding periods to show significant active phases between the 1350s-80s and 1610s-30s. We then compared the former with contemporary Russian reports concerning naked-eye sunspots and the latter with contemporary sunspot drawings based on Western telescopic observations. Especially some of the latter are consistent with nitrate signals preserved in ice cores. These results show us some insights on and beyond minima and maxima of solar activity during the 13th-17th centuries.

  2. Immunomodulatory Effect of Chinese Herbal Medicine Formula Sheng-Fei-Yu-Chuan-Tang in Lipopolysaccharide-Induced Acute Lung Injury Mice

    Directory of Open Access Journals (Sweden)

    Chia-Hung Lin

    2013-01-01

    Full Text Available Traditional Chinese medicine formula Sheng-Fei-Yu-Chuan-Tang (SFYCT, consisting of 13 medicinal plants, was used to treat patients with lung diseases. This study investigated the immunoregulatory effect of SFYCT on intratracheal lipopolysaccharides- (LPS- challenged acute lung injury (ALI mice. SFYCT attenuated pulmonary edema, macrophages, and neutrophils infiltration in the airways. SFYCT decreased inflammatory cytokines, including tumor necrosis factor-α (TNFα, interleukin-1β, and interleukin-6 and inhibited nitric oxide (NO production but increased anti-inflammatory cytokines, interleukin-4, and interleukin-10, in the bronchoalveolar lavage fluid of LPS-challenged mice. TNFα and monocyte chemotactic protein-1 mRNA expression in the lung of LPS-challenged mice as well as LPS-stimulated lung epithelial cell and macrophage were decreased by SFYCT treatment. SFYCT treatment also decreased the inducible nitric oxide synthase expression and phosphorylation of nuclear factor-κB (NF-κB in the lung of mice and macrophage with LPS stimulation. SFYCT treatment dose dependently decreased the LPS-induced NO and reactive oxygen species generation in LPS-stimulated macrophage. In conclusion, SFYCT attenuated lung inflammation during LPS-induced ALI through decreasing inflammatory cytokines production while increasing anti-inflammatory cytokines production. The immunoregulatory effect of SFYCT is related to inhibiting NF-κB phosphorylation.

  3. Immunomodulatory effect of chinese herbal medicine formula sheng-fei-yu-chuan-tang in lipopolysaccharide-induced acute lung injury mice.

    Science.gov (United States)

    Lin, Chia-Hung; Yeh, Ching-Hua; Lin, Li-Jen; Wang, Shulhn-Der; Wang, Jen-Shu; Kao, Shung-Te

    2013-01-01

    Traditional Chinese medicine formula Sheng-Fei-Yu-Chuan-Tang (SFYCT), consisting of 13 medicinal plants, was used to treat patients with lung diseases. This study investigated the immunoregulatory effect of SFYCT on intratracheal lipopolysaccharides- (LPS-) challenged acute lung injury (ALI) mice. SFYCT attenuated pulmonary edema, macrophages, and neutrophils infiltration in the airways. SFYCT decreased inflammatory cytokines, including tumor necrosis factor- α (TNF α ), interleukin-1 β , and interleukin-6 and inhibited nitric oxide (NO) production but increased anti-inflammatory cytokines, interleukin-4, and interleukin-10, in the bronchoalveolar lavage fluid of LPS-challenged mice. TNF α and monocyte chemotactic protein-1 mRNA expression in the lung of LPS-challenged mice as well as LPS-stimulated lung epithelial cell and macrophage were decreased by SFYCT treatment. SFYCT treatment also decreased the inducible nitric oxide synthase expression and phosphorylation of nuclear factor- κ B (NF- κ B) in the lung of mice and macrophage with LPS stimulation. SFYCT treatment dose dependently decreased the LPS-induced NO and reactive oxygen species generation in LPS-stimulated macrophage. In conclusion, SFYCT attenuated lung inflammation during LPS-induced ALI through decreasing inflammatory cytokines production while increasing anti-inflammatory cytokines production. The immunoregulatory effect of SFYCT is related to inhibiting NF- κ B phosphorylation.

  4. Topical problems of the theory of Transcendental numbers: Development of approaches to their solution in the works of Yu. V. Nesterenko

    Science.gov (United States)

    Chirskii, V. G.

    2017-04-01

    The present paper is a survey of a part of the theory devoted to certain problems concerning the algebraic independence of the values of analytic functions, to quantitative results on estimates for the measure of transcendence or the measure of algebraic independence of numbers, to functional analogs of these results on the algebraic independence of solutions of algebraic differential equations, and estimates for the multiplicities of zeros for polynomials in these solutions, which play an important role in the proof of numerical results. This choice is related to the fact that, in December 2016, the head of the Department of Number Theory of Moscow State University, Corresponding Member of the RAS Yu.V. Nesterenko, who did a lot to develop these directions of the theory Transcendental numbers and whose works are marked by many awards, became seventy. He is a laureate of the Markov RAS Prize, 2006, of the Ostrovsky international prize, 1997, of the Hardy-Ramanujan Society Prize, 1997, and the Alexander von Humboldt Prize, 2003. Since the article is dedicated to the 70th anniversary of the birth of Yurii Valentinovich, we preface the scientific part with a brief biography.

  5. Identification and Functional Analysis of microRNAs Involved in the Anther Development in Cotton Genic Male Sterile Line Yu98-8A

    Directory of Open Access Journals (Sweden)

    Xiaojie Yang

    2016-10-01

    Full Text Available Hybrid vigor contributes in a large way to the yield and quality of cotton (Gossypium hirsutum fiber. Although microRNAs play essential regulatory roles in flower induction and development, it is still unclear if microRNAs are involved in male sterility, as the regulatory molecular mechanisms of male sterility in cotton need to be better defined. In this study, two independent small RNA libraries were constructed and sequenced from the young buds collected from the sporogenous cell formation to the meiosis stage of the male sterile line Yu98-8A and the near-isogenic line. Sequencing revealed 1588 and 1536 known microRNAs and 347 and 351 novel miRNAs from male sterile and male fertile libraries, respectively. MicroRNA expression profiles revealed that 49 conserved and 51 novel miRNAs were differentially expressed. Bioinformatic and degradome analysis indicated the regulatory complexity of microRNAs during flower induction and development. Further RT-qPCR and physiological analysis indicated that, among the different Kyoto Encyclopedia Gene and Genomes pathways, indole-3-acetic acid and gibberellic acid signaling transduction pathways may play pivotal regulatory functions in male sterility.

  6. ge-patient kommunikation

    DEFF Research Database (Denmark)

    Dahl, Poul Nørgård

    2010-01-01

    I det danske sundhedsvæsen tillægges kommunikationen med patienten øget betydning, hvilket bl.a. ses i Speciallægekommissionens betænkning Fremtidens speciallæge (2000) og anbefalingerne i Patientens møde med sundhedsvæsenet (2003). Begge steder fremgår det, at god kommunikation ikke kun handler om......’, lægen ifølge Cordella (2004) kan tale med, som er forbundet med de ’stemmer’, patienten kan tale med. God kommunikation kan ses som den rette kombination af ’stemmer’ i forhold til den konkrete patient og dennes situation. En autentisk samtale med en hofteopereret patient næranalyseres ud fra sam- og...

  7. The Ge(0 0 1) surface

    NARCIS (Netherlands)

    Zandvliet, Henricus J.W.

    2003-01-01

    Although germanium (Ge) (0 0 1) has a relatively small surface unit cell, this surface displays a wealth of fascinating phenomena. The Ge(0 0 1) surface is a prototypical example of a system possessing both a strong short-range interaction due to dimerization of the surface atoms, as well as an

  8. Room Temperature Ferromagnetic Mn:Ge(001).

    Science.gov (United States)

    Lungu, George Adrian; Stoflea, Laura Elena; Tanase, Liviu Cristian; Bucur, Ioana Cristina; Răduţoiu, Nicoleta; Vasiliu, Florin; Mercioniu, Ionel; Kuncser, Victor; Teodorescu, Cristian-Mihail

    2013-12-27

    We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001), heated at relatively high temperature (starting with 250 °C). The samples were characterized by low energy electron diffraction (LEED), scanning tunneling microscopy (STM), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), superconducting quantum interference device (SQUID), and magneto-optical Kerr effect (MOKE). Samples deposited at relatively elevated temperature (350 °C) exhibited the formation of ~5-8 nm diameter Mn₅Ge₃ and Mn11Ge₈ agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001) crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm) deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge-Ge dimers on Ge(001). The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

  9. Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Sadofyev, Yu. G., E-mail: sadofyev@hotmail.com; Martovitsky, V. P.; Bazalevsky, M. A.; Klekovkin, A. V. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Averyanov, D. V.; Vasil’evskii, I. S. [National Research Nuclear University MEPhI (Russian Federation)

    2015-01-15

    The growth of GeSn layers by molecular-beam epitaxy on Si (100) wafers coated with a germanium buffer layer is investigated. The properties of the fabricated structures are controlled by reflection high-energy electron diffraction, atomic-force microscopy, X-ray diffractometry, Rutherford backscattering, and Raman scattering. It is shown that GeSn layers with thicknesses up to 0.5 μm and Sn molar fractions up to 0.073 manifest no sign of plastic relaxation upon epitaxy. The lattice constant of the GeSn layers within the growth plane is precisely the same as that of Ge. The effect of rapid thermal annealing on the conversion of metastable elastically strained GeSn layers into a plastically relaxed state is examined. Ge/GeSn quantum wells with Sn molar fraction up to 0.11 are obtained.

  10. Opposition /y/-/u/ chez sept apprenantes japonophones avec et sans aide de l'ultrason lingual: 2. identification perceptive des voyelles isolées par 16 francophones natifs

    OpenAIRE

    Kamiyama, Takeki; Pillot-Loiseau, Claire; Kocjančič Antolík, Tanja

    2014-01-01

    International audience; Four Japanese-speaking learners (EXP) received pronunciation training with ultrasound feedback in producing French /y/-/u/. They were recorded before (REC1), a week after (REC2), and two months after the training (REC3). Three other learners (CTR) were recorded twice at similar intervals. Sixteen French native subjects listened to stimuli (4 tokens of /y/ and /u/ in isolation) pronounced by each learner in REC1, 2, and 3. They identified the vowel, providing a goodness...

  11. Ge nitride formation in N-doped amorphous Ge2Sb2Te5

    Science.gov (United States)

    Jung, M.-C.; Lee, Y. M.; Kim, H.-D.; Kim, M. G.; Shin, H. J.; Kim, K. H.; Song, S. A.; Jeong, H. S.; Ko, C. H.; Han, M.

    2007-08-01

    The chemical state of N in N-doped amorphous Ge2Sb2Te5 (a-GST) samples with 0-14.3Nat.% doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeNx) peak developed at the binding energy of 30.2eV and increased in intensity as the N-doping concentration increased. Generation of GeNx was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeNx, rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature.

  12. The Functional Study of a Chinese Herbal Compounded Antidepressant Medicine--Jie Yu Chu Fan Capsule on Chronic Unpredictable Mild Stress Mouse Model.

    Directory of Open Access Journals (Sweden)

    Lingling Ding

    Full Text Available Jie Yu Chu Fan capsule (JYCF is a new compounded Chinese herbal medicine for the treatment of depression. The present study was designed to explore the antidepressant effects and the possible mechanisms of JYCF by using chronic unpredictable mild stress (CUMS mouse model and comparing results to that of fluoxetine. Behavioral tests including an open field test, sucrose preference test and forced swim test were performed to evaluate the antidepressant effects of JYCF. The concentrations of monoamine neurotransmitters and metabolic products including norepinephrine (NE, 5-hydroxytryptamine (5-HT, dopamine (DA, 5-hydroxyindoleacetic acid (5-HIAA, homovanillic acid (HVA and 3,4-dihydroxyphenylacetic acid (DOPAC in the cerebral cortex and hippocampus of mice were determined by means of high performance liquid chromatography with electrochemical detection (HPLC-EC. The results show that a successful mouse CUMS model was established through 5 weeks of continuous unpredictable stimulation, as indicated by the significant decrease in sucrose preference and locomotor activity and increase in immobility time in the forced swim test. Chronic treatment of JYCF (1.25, 2.5 and 5 g/kg and fluoxetine (20 mg/kg significantly reversed the CUMS-induced behavioral abnormalities. JYCF (1.25, 2.5 and 5 g/kg significantly increased NE in CUMS mouse prefrontal cortex (P < 0.01, P < 0.01, P < 0.05 respectively and 5-HT in hippocampus (P < 0.05. In summary, our findings suggest that JYCF exerts comparable antidepressant-like effects to that of fluoxetine in CUMS mice. Besides, the antidepressant-like effect of JYCF is mediated by the increase of monoaminergic transmitters including 5-HT and NE.

  13. De Hemingway au chinois classique : le travail de la langue de l’écrivain taïwanais Wang Wen-hsing

    Directory of Open Access Journals (Sweden)

    Sandrine Marchand

    2014-04-01

    Full Text Available Dans les années 1970, l’« occidentalisation » de Wang Wen-hsing lui attire les foudres de la critique. On lui reproche, entre autres choses, de mal écrire, d’être incompréhensible et d’écrire dans une langue occidentalisée. Lui-même semble prendre pour modèle son professeur de français, dont le niveau de chinois classique était très élevé. Entre chinois classique, moderne, dialecte de sa région natale (très proche du dialecte de Taïwan, anglais, et français idéalisé, Wang Wen-hsing invente sa propre langue. Dans les manuscrits de son premier roman, il recourt au syllabaire que les enfants utilisent en cours d’apprentissage de la langue chinoise pour remplacer les caractères d’écriture, syllabaire qui disparaît ensuite à la publication. Que nous apprend l’utilisation de ce syllabaire sur le travail créatif de l’auteur ?Wang Wen-hsing est un auteur qui, entre extrême précision et violence, consacre sa vie et toute son énergie au travail de la langue. Quelle langue tente-t-il d’approcher : le chinois normatif des temps anciens, la langue américaine de Hemingway, ou un mélange des deux ?Multilingue à l’intérieur de la langue chinoise moderne, elle-même langue encore proche du chinois classique, abandonné seulement au début du xxe siècle, l’écriture romanesque de Wang Wen-hsing, qui a pour critère de valeur le « tong-shun » (clarté et aisance, est le fruit de l’oralité et d’une langue expérimentale. Ce rapport à la langue vient-il de sa situation d’émigration, de son isolement des milieux politiques et intellectuels, comme cela lui a été reproché lorsque justement on l’accusait d’écrire dans une langue incompréhensible pour le lecteur ? Pourquoi ces romans sont-ils jugés incompréhensibles ? En raison du niveau du lecteur moyen ? Pour des raisons géopolitiques, car il est un émigré en position dominante dans l’île ? Parce que la langue chinoise est dans

  14. A new concept: Epigenetic game theory. Comment on: ;Epigenetic game theory: How to compute the epigenetic control of maternal-to-zygotic transition; by Qian Wang et al.

    Science.gov (United States)

    Zheng, Xiu-Deng; Tao, Yi

    2017-03-01

    The evolutionary significance of the interaction between paternal and maternal genomes in fertilized zygotes is a very interesting and challenging question. Wang et al. developed the concept of epigenetic game theory, and they try to use this concept to explain the interaction between paternal and maternal genomes in fertilized zygotes [1]. They emphasize that the embryogenesis can be considered as an ecological system in which two highly distinct and specialized gametes coordinate through either cooperation or competition, or both, to maximize the fitness of embryos under Darwinian selection. More specifically, they integrate game theory to model the pattern of coordination of paternal genome and maternal genomes mediated by DNA methylation dynamics, and they called this epigenetic game theory.

  15. Ge Quantum Dot Infrared Imaging Camera Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Luna Innovations Incorporated proposes to develop a high performance Ge quantum dots-based infrared (IR) imaging camera on Si substrate. The high sensitivity, large...

  16. Estimating design effort for GE hydro projects

    Energy Technology Data Exchange (ETDEWEB)

    Bashir, H.A. [Sultan Qaboos University, Muscat (Oman). Dept. of Mechanical and Industrial Engineering; Thomson, V. [McGill University, Montreal (Canada). Dept. of Mechanical Engineering

    2004-04-01

    Effort estimation is an essential process in determining the final cost, as well as the duration of, a future design project. This paper discusses the construction of a parametric model done in collaboration with General Electric (GE) Hydro (GE Hydro is a world leader in the design and construction of generators and turbines for hydro-electric power generation), the purpose being to estimate the effort needed to create designs for hydro-electric generators. An analysis of the data showed that the developed model resulted in a mean relative error of 13% compared to original estimation errors by GE Hydro staff, which averaged 27%. GE has been using the estimation model for its projects since the beginning of the year 2000. (author)

  17. Sharp bends and Mach-Zehnder interferometer based on Ge-rich-SiGe waveguides on SiGe graded buffer.

    Science.gov (United States)

    Vakarin, Vladyslav; Chaisakul, Papichaya; Frigerio, Jacopo; Ballabio, Andrea; Le Roux, Xavier; Coudevylle, Jean-René; Bouville, David; Perez-Galacho, Diego; Vivien, Laurent; Isella, Giovanni; Marris-Morini, Delphine

    2015-11-30

    The integration of germanium (Ge)-rich active devices in photonic integrated circuits is challenging due to the lattice mismatch between silicon (Si) and Ge. A new Ge-rich silicon-germanium (SiGe) waveguide on graded buffer was investigated as a platform for integrated photonic circuits. At a wavelength of 1550 nm, low loss bends with radii as low as 12 µm and Multimode Interferometer beam splitter based on Ge-rich SiGe waveguide on graded buffer were designed, fabricated and characterized. A Mach Zehnder interferometer exhibiting a contrast of more than 10 dB has been demonstrated.

  18. Identifying a suitable passivation route for Ge interfaces

    Science.gov (United States)

    Li, H.; Lin, L.; Robertson, J.

    2012-07-01

    We compare the usefulness of HfO2, LaGeOx, HfGeOy, GeNx, and Al2O3 as passivating gate dielectrics for Ge substrates. We argue that a key role is to block O vacancy diffusion through the GeO2, inhibiting defect creation at the Ge-oxide interface. Al2O3 is shown to be preferred for this role, being a diffusion barrier and having large band offsets. HfGeOx can phase-separate, leaving HfO2 through which O vacancies and Ge could diffuse. LaGeOx can cause flat-band shifts of undesired polarity, whereas GeNx has a rather small valence band offset and band tail states.

  19. Potential effectiveness of Chinese herbal medicine Yu ping feng san for adult allergic rhinitis: a systematic review and meta-analysis of randomized controlled trials.

    Science.gov (United States)

    Luo, Qiulan; Zhang, Claire Shuiqing; Yang, Lihong; Zhang, Anthony Lin; Guo, Xinfeng; Xue, Charlie Changli; Lu, Chuanjian

    2017-11-06

    Chinese herbal medicine formula Yu ping feng san (YPFS) is commonly used for allergic rhinitis (AR). Previous review had summarized the effectiveness and safety of YPFS, however without any subgroup analysis performed to provide detailed evidence for guiding clinical practice. YPFS was recommended for the management of AR by Chinese medicine clinical practice guideline, but the treatment duration of YPFS was also not specified. The aim of this study is to evaluate the effectiveness and safety of YPFS in treating adult AR with the most recent evidence, and attempt to specify the duration of utilisation through subgroup meta-analyses. Seven databases were searched from their inceptions to September 2017. Randomized controlled trials (RCTs) evaluating YPFS for adult AR were included. Methodological quality of studies was assessed using the Cochrane risk of bias tool. Meta-analysis and subgroup meta-analyses were conducted for evaluating the effectiveness of YPFS. The Grading of Recommendations Assessment, Development and Evaluation (GRADE) approach was used for rating the quality of evidence. Twenty-two RCTs involving 23 comparisons were included in this review. YPFS was compared to placebo, pharmacotherapy, and used as an add-on treatment compared to pharmacotherapy. Meta-analyses were feasible for the outcomes of four individual nasal symptom scores and "effective rate". Four individual nasal symptom scores decreased after YPFS' combination treatment: itchy nose (MD-0.46, 95% CI[-0.50, -0.42]), sneezing (MD-0.41, 95% CI[-0.47, -0.35]), blocked nose (MD-0.46, 95% CI[-0.54, -0.39]) and runny nose (MD-0.42, 95% CI[-0.58, -0.26]). Based on "effective rate", meta-analysis showed that YPFS did not achieve better effect than pharmacotherapy (RR1.07, 95%CI [0.94, 1.22), but its combination with pharmacotherapy seemed more effective than pharmacotherapy alone (RR1.27, 95%CI [1.19, 1.34]) (low quality). Subgroup analysis suggested that YPFS was not superior to the second

  20. Shen-Qi-Jie-Yu-Fang exerts effects on a rat model of postpartum depression by regulating inflammatory cytokines and CD4+CD25+ regulatory T cells

    Directory of Open Access Journals (Sweden)

    Li JY

    2016-04-01

    Full Text Available Jingya Li,1,* Ruizhen Zhao,1,* Xiaoli Li,1 Wenjun Sun,1 Miao Qu,1 Qisheng Tang,1 Xinke Yang,1 Shujing Zhang2 1Third Affiliated Hospital, 2School of Basic Medical Sciences, Beijing University of Chinese Medicine, Beijing, People’s Republic of China *These authors contributed equally to this work Background: Shen-Qi-Jie-Yu-Fang (SJF is composed of eight Chinese medicinal herbs. It is widely used in traditional Chinese medicine for treating postpartum depression (PPD. Previous studies have shown that SJF treats PPD through the neuroendocrine mechanism. Aim: To further investigate the effect of SJF on the immune system, including the inflammatory response system and CD4+CD25+ regulatory T (Treg cells. Materials and methods: Sprague Dawley rats were used to create an animal model of PPD by inducing hormone-simulated pregnancy followed by hormone withdrawal. After hormone withdrawal, the PPD rats were treated with SJF or fluoxetine for 1, 2, and 4 weeks. Levels of Treg cells in peripheral blood were measured by flow cytometry analysis. Serum interleukin (IL-1β and IL-6 were evaluated by enzyme-linked immunosorbent assay, and gene and protein expressions of IL-1RI, IL-6Rα, and gp130 in the hippocampus were observed by reverse-transcription polymerase chain reaction and Western blot. Results: Serum IL-1β in PPD rats increased at 2 weeks and declined from then on, while serum IL-6 increased at 1, 2, and 4 weeks. Both IL-1β and IL-6 were downregulated by SJF and fluoxetine. Changes in gene and protein expressions of IL-1RI and gp130 in PPD rats were consistent with changes in serum IL-1β, and were able to be regulated by SJF and fluoxetine. The levels of Treg cells were negatively correlated with serum IL-1β and IL-6, and were decreased in PPD rats. The levels of Treg cells were increased by SJF and fluoxetine. Conclusion: Dysfunction of proinflammatory cytokines and Tregs in different stages of PPD was attenuated by SJF and fluoxetine through

  1. Sheng-ji Hua-yu formula promotes diabetic wound healing of re-epithelization via Activin/Follistatin regulation.

    Science.gov (United States)

    Kuai, Le; Zhang, Jing-Ting; Deng, Yu; Xu, Shun; Xu, Xun-Zhe; Wu, Min-Feng; Guo, Dong-Jie; Chen, Yu; Wu, Ren-Jie; Zhao, Xing-Qiang; Nian, Hua; Li, Bin; Li, Fu-Lun

    2018-01-29

    Sheng-ji Hua-yu(SJHY) formula is one of the most useful Traditional Chinese medicine (TCM) in the treatment of the delayed diabetic wound. However, elucidating the related molecular biological mechanism of how the SJHY Formula affects excessive inflammation in the process of re-epithelialization of diabetic wound healing is a task urgently needed to be fulfilled. The objectives of this study is to evaluate the effect of antagonisic expression of pro-/anti-inflammatory factors on transforming growth factor-β(TGF-β) superfamily (activin and follistatin) in the process of re-epithelialization of diabetic wound healing in vivo, and to characterize the involvement of the activin/follistatin protein expression regulation, phospho-Smad (pSmad2), and Nuclear factor kappa B p50 (NF-kB) p50 in the diabetic wound healing effects of SJHY formula. SJHY Formula was prepared by pharmaceutical preparation room of Yueyang Hospital of Integrated Traditional Chinese and Western Medicine. Diabetic wound healing activity was evaluated by circular excision wound models. Wound healing activity was examined by macroscopic evaluation. Activin/follistatin expression regulation, protein expression of pSmad2 and NF-kB p50 in skin tissue of wounds were analyzed by Real Time PCR, Western blot, immunohistochemistry and hematoxylin and eosin (H&E) staining. Macroscopic evaluation analysis showed that wound healing of diabetic mice was delayed, and SJHY Formula accelerated wound healing time of diabetic mice. Real Time PCR analysis showed higher mRNA expression of activin/follistatin in diabetic delayed wound versus the wound in normal mice. Western Blot immunoassay analysis showed reduction of activin/follistatin proteins levels by SJHY Formula treatment 15 days after injury. Immunohistochemistry investigated the reduction of pSmad2 and NF-kB p50 nuclear staining in the epidermis of diabetic SJHY versus diabetic control mice on day 15 after wounding. H&E staining revealed that SJHY Formula

  2. Thermal transport through Ge-rich Ge/Si superlattices grown on Ge(0 0 1)

    Science.gov (United States)

    Thumfart, L.; Carrete, J.; Vermeersch, B.; Ye, N.; Truglas, T.; Feser, J.; Groiss, H.; Mingo, N.; Rastelli, A.

    2018-01-01

    The cross-plane thermal conductivities of Ge-rich Si/Ge superlattices have been measured using both time-domain thermoreflectance and the differential 3ω method. The superlattices were grown by molecular beam epitaxy on Ge(0 0 1) substrates. Crystal quality and structural information were investigated by x-ray diffractometry and transmission electron microscopy. The influence of segregation during growth on the composition profiles was modeled using the experimental growth temperatures and deposition rates. Those profiles were then employed to obtain parameter-free theoretical estimates of the thermal conductivity by combining first-principles calculations, Boltzmann transport theory and phonon Green’s functions. Good agreement between theory and experiment is observed. The thermal conductivity shows a strong dependence on the composition and the thickness of the samples. Moreover, the importance of the composition profile is reflected in the fact that the thermal conductivity of the superlattices is considerably lower than predicted values for alloys with the same average composition and thickness. Measurement on different samples with the same Si layer thickness and number of periods, but different Ge layer thickness, show that the thermal resistance is only weakly dependent on the Ge layers. We analyze this phenomenon based on the first-principles mode, and build an approximate parametrization showing that, in this regime, the resistivity of a SL is roughly linear on the amount of Si.

  3. Parabolic negative magnetoresistance in p-Ge/Ge1-xSix heterostructures

    NARCIS (Netherlands)

    Arapov, YG; Harus, GI; Neverov, VN; Shelushinina, NG; Kuznetsov, OA

    Quantum corrections for the conductivity due to the weak localization (WL) and the disorder-modified electron-electron interaction (EEI) are investigated for the high-mobility multilayer p-Ge/Ge1-xSex heterostructures at T=(0.1-20) K in magnetic field B up to 1.5 T. Negative magnetoresistance with

  4. Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-11-01

    Full Text Available In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si through microwave annealing (MWA ranging from 200 to 470 °C for 150 s in N2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390 °C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (ION/IOFF ratio of ~3 × 105. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.

  5. Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

    Directory of Open Access Journals (Sweden)

    Jacques Perrin Toinin

    2015-01-01

    Full Text Available In this work a novel process allowing for the production of nanoporous Ge thin films is presented. This process uses the combination of two techniques: Ge sputtering on SiO2 and dopant ion implantation. The process entails four successive steps: (i Ge sputtering on SiO2, (ii implantation preannealing, (iii high-dose dopant implantation, and (iv implantation postannealing. Scanning electron microscopy and transmission electron microscopy were used to characterize the morphology of the Ge film at different process steps under different postannealing conditions. For the same postannealing conditions, the Ge film topology was shown to be similar for different implantation doses and different dopants. However, the film topology can be controlled by adjusting the postannealing conditions.

  6. JLab 12-GeV Upgrade

    CERN Document Server

    Lung, Allison

    2005-01-01

    Jefferson Lab is preparing to upgrade its 6 GeV Continuous Electron Beam Accelerator Facility (CEBAF) to 12 GeV reach in energy. The energy doubling will significantly extend the scientific reach in the three existing experimental Halls A, B and C, and the upgrade will add the capability of a newly constructed hall, Hall D, to study the 'confinement of quarks'. The energy upgrade will be achieved by the addition of ten high performance high gradient SRF cryomodules into existing space in the north and south recirculating linacs that will enhance the energy per pass to the level of 2 GeV. The SRF modules will be constructed at JLab with achieved gradients in excess of 20 MV/m and associated power RF and controls. The cryogenics will be upgraded by 50%, the transport magnets enhanced to deal with the increased beam energy, and a special radiator placed in the path of the electron beam to produce up to 9 GeV photons for Hall D physics. The present status of the 12 GeV Upgrade project will be described along with...

  7. 76 FR 82103 - Airworthiness Directives; General Electric Company (GE) GE90-110B1 and GE90-115B Turbofan Engines

    Science.gov (United States)

    2011-12-30

    ...-10-AD; Amendment 39-16901; AD 2011-26-11] RIN 2120-AA64 Airworthiness Directives; General Electric Company (GE) GE90- 110B1 and GE90-115B Turbofan Engines AGENCY: Federal Aviation Administration (FAA), DOT... failure of the seal of the HPC stages 2-5 spool, uncontained engine failure, and damage to the airplane...

  8. The impact of an underground cut-off wall on nutrient dynamics in groundwater in the lower Wang River watershed, China.

    Science.gov (United States)

    Kang, Pingping; Xu, Shiguo

    2017-03-01

    Underground cut-off walls in coastal regions are mainly used to prevent saltwater intrusion, but their impact on nutrient dynamics in groundwater is not clear. In this study, a combined analysis of multiple isotopes ([Formula: see text]) and nitrogen and phosphorus concentrations is used in order to assess the impact of the underground cut-off walls on the nutrient dynamics in groundwater in the lower Wang River watershed, China. Compared with the nitrogen and phosphorus concentrations in groundwater downstream of the underground cut-off walls, high [Formula: see text] and total dissolved nitrogen concentrations and similar concentration levels of [Formula: see text] and total dissolved phosphorus are found in groundwater upstream of the underground cut-off walls. The isotopic data indicated the probable occurrence of denitrification and nitrification processes in groundwater upstream, whereas the fingerprint of these processes was not shown in groundwater downstream. The management of fertilizer application is critical to control nitrogen concentrations in groundwater restricted by the underground cut-off walls.

  9. Evaluation of the grand-canonical partition function using expanded Wang-Landau simulations. III. Impact of combining rules on mixtures properties

    Energy Technology Data Exchange (ETDEWEB)

    Desgranges, Caroline; Delhommelle, Jerome [Department of Chemistry, University of North Dakota, 151 Cornell Street Stop 9024, Grand Forks, North Dakota 58202 (United States)

    2014-03-14

    Combining rules, such as the Lorentz-Berthelot rules, are routinely used to calculate the thermodynamic properties of mixtures using molecular simulations. Here we extend the expanded Wang-Landau simulation approach to determine the impact of the combining rules on the value of the partition function of binary systems, and, in turn, on the phase coexistence and thermodynamics of these mixtures. We study various types of mixtures, ranging from systems of rare gases to biologically and technologically relevant mixtures, such as water-urea and water-carbon dioxide. Comparing the simulation results to the experimental data on mixtures of rare gases allows us to rank the performance of combining rules. We find that the widely used Lorentz-Berthelot rules exhibit the largest deviations from the experimental data, both for the bulk and at coexistence, while the Kong and Waldman-Hagler provide much better alternatives. In particular, in the case of aqueous solutions of urea, we show that the use of the Lorentz-Berthelot rules has a strong impact on the Gibbs free energy of the solute, overshooting the value predicted by the Waldman-Hagler rules by 7%. This result emphasizes the importance of the combining rule for the determination of hydration free energies using molecular simulations.

  10. Evaluation of the grand-canonical partition function using expanded Wang-Landau simulations. III. Impact of combining rules on mixtures properties

    Science.gov (United States)

    Desgranges, Caroline; Delhommelle, Jerome

    2014-03-01

    Combining rules, such as the Lorentz-Berthelot rules, are routinely used to calculate the thermodynamic properties of mixtures using molecular simulations. Here we extend the expanded Wang-Landau simulation approach to determine the impact of the combining rules on the value of the partition function of binary systems, and, in turn, on the phase coexistence and thermodynamics of these mixtures. We study various types of mixtures, ranging from systems of rare gases to biologically and technologically relevant mixtures, such as water-urea and water-carbon dioxide. Comparing the simulation results to the experimental data on mixtures of rare gases allows us to rank the performance of combining rules. We find that the widely used Lorentz-Berthelot rules exhibit the largest deviations from the experimental data, both for the bulk and at coexistence, while the Kong and Waldman-Hagler provide much better alternatives. In particular, in the case of aqueous solutions of urea, we show that the use of the Lorentz-Berthelot rules has a strong impact on the Gibbs free energy of the solute, overshooting the value predicted by the Waldman-Hagler rules by 7%. This result emphasizes the importance of the combining rule for the determination of hydration free energies using molecular simulations.

  11. Game theory in epigenetic reprogramming. Comment on: ;Epigenetic game theory: How to compute the epigenetic control of maternal-to-zygotic transition; by Qian Wang et al.

    Science.gov (United States)

    Hsu, Fei-Man; Chen, Pao-Yang

    2017-03-01

    Von Neumann and Morgenstern published the Theory of Games and Economic Behavior in 1944, describing game theory as a model in which intelligent rational decision-makers manage to find their best strategies in conflict, cooperative or other mutualistic relationships to acquire the greatest benefit [1]. This model was subsequently incorporated in ecology to simulate the ;fitness; of a species during natural selection, designated evolutionary game theory (EGT) [2]. Wang et al. proposed ;epiGame;, taking paternal and maternal genomes as ;intelligent; players that compete, cooperate or both during embryogenesis to maximize the fitness of the embryo [3]. They further extended game theory to an individual or single cell environment. During early zygote development, DNA methylation is reprogrammed such that the paternal genome is demethylated before the maternal genome. After the reset, the blastocyst is re-methylated during embryogenesis. At that time, the paternal and maternal genomes have a conflict of interest related to the expression of their own genes. The proposed epiGame models such interactive regulation between the parental genomes to reach a balance for embryo development (equation (2)).

  12. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang

    2016-10-28

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  13. Compton profile study of V3Ge and Cr3Ge

    Science.gov (United States)

    Sharma, Y. C.; Vyas, V.; Purvia, V.; Joshi, K. B.; Sharma, B. K.

    2008-02-01

    In this paper the results of a Compton profile study of two polycrystalline A15 compounds, namely, V_{3}Ge and Cr_{3}Ge, have been reported. The measurements have been performed using 59.54 keV γ-rays from an ^{241}Am source. The theoretical Compton profiles have been computed for both the compounds using ab-initio linear combination of atomic orbitals (LCAO) method employing CRYSTAL98. For both the A15 compounds, the isotropic experimental profiles are found to be in good overall agreement with the calculations. The comparison points out residual differences in V_{3}Ge whereas for Cr_{3}Ge the differences are within experimental error. The behaviour of valence electrons in the two iso-structural compounds has been examined on the scale of Fermi momentum. The valence electron distribution seems to be dominated by the metallic constituents rather than Ge and two compounds show covalent nature of bonding which is larger in V_{3}Ge compared to Cr_{3}Ge.

  14. Silicon nitride waveguide-integrated Ge/SiGe quantum wells optical modulator

    Science.gov (United States)

    Chaisakul, Papichaya; Vakarin, Vladyslav; Frigerio, Jacopo; Isella, Giovanni; Vivien, Laurent; Marris-Morini, Delphine

    2017-09-01

    Silicon-based photonics has generated a strong interest in recent years, mainly for optical interconnects and sensing on photonic integrated circuits. The main rationales of silicon photonics are the reduction of energy consumption and photonic system costs via integration on a standard Si chip. Waveguide-integrated silicon based-optoelectronic modulators have been particularly studied as a key building block. Ge-rich Ge/SiGe quantum well waveguides are promising for compact and low energy consumption modulators thanks to the demonstration of direct gap related optical transitions in these structures, while silicon nitride (SiN) waveguide could be a promising alternative to Si waveguide. This paper studies an integration approach between passive SiN waveguide and active Ge/SiGe multiple quantum wells (MQWs) optoelectronic modulators. Photocurrent measurements at different bias voltages demonstrated strong optical modulation within the O-band wavelength (1.26 – 1.36 µm) from Ge/SiGe MQWs, while 3D-FDTD calculations confirm a compact and efficient integration with SiN waveguide on Si wafer.

  15. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

    KAUST Repository

    Mantey, J.

    2013-01-01

    Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.

  16. Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics.

    Science.gov (United States)

    Ghetmiri, Seyed Amir; Zhou, Yiyin; Margetis, Joe; Al-Kabi, Sattar; Dou, Wei; Mosleh, Aboozar; Du, Wei; Kuchuk, Andrian; Liu, Jifeng; Sun, Greg; Soref, Richard A; Tolle, John; Naseem, Hameed A; Li, Baohua; Mortazavi, Mansour; Yu, Shui-Qing

    2017-02-01

    A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for a structure accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on the result, a systematic study of SiGeSn and GeSn bandgap energy separation and barrier heights versus material compositions and strain was conducted, leading to a practical design of a type-I direct bandgap quantum well.

  17. Ge and Ge-rich Group IV Alloys on Si for Photonic Device Applications

    Science.gov (United States)

    Mathews, Jay; Menendez, Jose; D'Costa, Vijay; Yu, Shui-Qing; Roucka, Radek; Xie, Junqi; Fang, Yanyan; Kouvetakis, John

    2009-10-01

    The application of silicon photonic technologies to optical telecommunications requires the development of near-infrared detectors monolithically integrated to the Si platform. Recently, new low-temperature CVD techniques have been developed for growth of high-quality epitaxial films of Ge, Ge1-ySny, and SixGe1-x-ySny directly on Si. In this poster, we present details on the growth of these films, optimization of processes for the fabrication of photonic devices, and results from some prototype p-i-n heterostructure devices.

  18. Distribution and Substitution Mechanism of Ge in a Ge-(Fe-Bearing Sphalerite

    Directory of Open Access Journals (Sweden)

    Nigel J. Cook

    2015-03-01

    Full Text Available The distribution and substitution mechanism of Ge in the Ge-rich sphalerite from the Tres Marias Zn deposit, Mexico, was studied using a combination of techniques at μm- to atomic scales. Trace element mapping by Laser Ablation Inductively Coupled Mass Spectrometry shows that Ge is enriched in the same bands as Fe, and that Ge-rich sphalerite also contains measurable levels of several other minor elements, including As, Pb and Tl. Micron- to nanoscale heterogeneity in the sample, both textural and compositional, is revealed by investigation using Focused Ion Beam-Scanning Electron Microscopy (FIB-SEM combined with Synchrotron X-ray Fluorescence mapping and High-Resolution Transmission Electron Microscopy imaging of FIB-prepared samples. Results show that Ge is preferentially incorporated within Fe-rich sphalerite with textural complexity finer than that of the microbeam used for the X-ray Absorption Near Edge Structure (XANES measurements. Such heterogeneity, expressed as intergrowths between 3C sphalerite and 2H wurtzite on  zones, could be the result of either a primary growth process, or alternatively, polystage crystallization, in which early Fe-Ge-rich sphalerite is partially replaced by Fe-Ge-poor wurtzite. FIB-SEM imaging shows evidence for replacement supporting the latter. Transformation of sphalerite into wurtzite is promoted by (111* twinning or lattice-scale defects, leading to a heterogeneous ZnS sample, in which the dominant component, sphalerite, can host up to ~20% wurtzite. Ge K-edge XANES spectra for this sphalerite are identical to those of the germanite and argyrodite standards and the synthetic chalcogenide glasses GeS2 and GeSe2, indicating the Ge formally exists in the tetravalent form in this sphalerite. Fe K-edge XANES spectra for the same sample indicate that Fe is present mainly as Fe2+, and Cu K-edge XANES spectra are characteristic for Cu+. Since there is no evidence for coupled substitution involving a monovalent

  19. Retraction statement: 'Formin-like2 regulates Rho/ROCK pathway to promote actin assembly and cell invasion of colorectal cancer' by Yuanfeng Zeng, Huijun Xie, Yudan Qiao, Jianmei Wang, Xiling Zhu, Guoyang He, Yuling Li, Xiaoli Ren, Feifei Wang, Li Liang and Yanqing Ding.

    Science.gov (United States)

    2016-07-01

    The above article in Cancer Science (doi: 10.1111/cas.12768), published online on 26 October 2015 in Wiley Online Library (http://wileyonlinelibrary.com), has been retracted by agreement between the authors, the journal Editor in Chief, Yusuke Nakamura, and Wiley Publishing Asia Pty Ltd. The retraction has been agreed as Panels +C3 and +Y27632 of SW480 Mock shown in Figure 2a appear to have been taken from the same image, Panels + C3 and +Y27632 of HT29 FMNL2 shown in Figure 2a appear to have been taken from the same image, Panels shFMNL2-1 and shmDial1-1 in Figure 3a appear to have been taken from the same image, shFMNL2-2 and shmDial1-2 in Figure 3a appear to have been taken from the same image, Panels of shFMNL2-1 + shmDial1-1 and shFMNL2-1 + shmDial1-2 of +LPA appear to have been taken from the same image, gel bands of FLAG in Figure 4e appear to have been have been manipulated by erasing gel bands. Reference Zeng Y, Xie H, Qiao Y, Wang J, Zhu X, He G, Li Y, Ren X, Wang F, Liang L, Ding Y. Formin-like2 regulates Rho/ROCK pathway to promote actin assembly and cell invasion of colorectal cancer. Cancer Sci 2015; 106: 1385-93. doi: 10.1111/cas.12768. © 2016 The Authors. Cancer Science published by John Wiley & Sons Australia, Ltd on behalf of Japanese Cancer Association.

  20. Dynamics and energetics of Ge(001) dimers

    NARCIS (Netherlands)

    van Houselt, Arie; van Gastel, Raoul; Poelsema, Bene; Zandvliet, Henricus J.W.

    2006-01-01

    The dynamic behavior of surface dimers on Ge(001) has been studied by positioning the tip of a scanning tunneling microscope over single flip-flopping dimers and measuring the tunneling current as a function of time. We observe that not just symmetric, but also asymmetric appearing dimers exhibit

  1. At søge litteratur

    DEFF Research Database (Denmark)

    Wallin, Johan Albert

    2006-01-01

    Dette modul indgår i et "Grundkursus i forskningstræningrundkursus i forskningstræning", som er en del af den obligatoriske lægelige speciallægeuddannelse i Region Syddanmark. Grundkurset ligger i Syddansk Universitets Blackboard e-Education Platform. Modulet "At søge litteratur" introducerer de...

  2. Magnetic properties of Mn-doped chalcopyrites: (BeSn,BeGe,MgGe)N2

    Science.gov (United States)

    Rufinus, Jeff; DeWinter, Jennifer L.

    2008-04-01

    The current interest in the emerging field of semiconductor spintronics is mostly focused on transition metal-doped binary materials. Recently, however, the explorations of transition metal-doped chalcopyrite semiconductors have intensified. Since the chalcopyrites are ternary materials, there are possibilities of having ferromagnetic or antiferromagnetic configurations, depending on which metal site was substituted by the dopant. A density functional theory within generalized gradient approximation study of three thermodynamically stable Mn-doped (II-IV)-N2 chalcopyrites: (BeSn,BeGe,MgGe)N2 was performed. The results show both BeSnN2 and BeGeN2 to be antiferromagnetic for MnII (Mn substitutes II site) and ferromagnetic for MnIV (Mn substitutes IV site.) On the other hand, MgGeN2 was found to be antiferromagnetic, independent of the substitution sites.

  3. Conduction band discontinuity and electron confinement at the SixGe1-x/Ge interface

    Science.gov (United States)

    Mazzeo, G.; Yablonovitch, E.; Jiang, H. W.; Bai, Y.; Fitzgerald, E. A.

    2010-05-01

    Germanium rich heterostructures can constitute a valid alternative to Silicon for the confinement of single electron spins. The conduction band discontinuity in SiGe/Ge heterostructures grown on pure germanium substrate is predicted to allow the confinement of electrons in the germanium, and the conduction band profile of germanium rich heterostructures allow the implementation of g-factor modulation devices not possible in Silicon. We here prove that electrons can indeed be trapped at the Si0.1Ge0.9/Ge interface and we measure the height of the energy barrier to 0.55±0.05 eV by measuring the tunneling time of electrons as a function of the electric field.

  4. Strangeness from 20 A GeV to 158 A GeV

    Energy Technology Data Exchange (ETDEWEB)

    Friese, Volker [Gesellschaft fuer Schwerionenforschung, Planckstr 1, D-64291 Darmstadt (Germany); Alt, C [Fachbereich Physik der Universitaet Frankfurt, Frankfurt (Germany); Anticic, T [Rudjer Boskovic Institute, Zagreb (Croatia); Baatar, B [Joint Institute for Nuclear Research, Dubna (Russian Federation); Barna, D [KFKI Research Institute for Particle and Nuclear Physics, Budapest (Hungary); Bartke, J [Institute of Nuclear Physics, Cracow (Poland); Behler, M [Fachbereich Physik der Universitaet Marburg, Marburg (Germany); Betev, L [Fachbereich Physik der Universitaet Frankfurt, Frankfurt (Germany); Bialkowska, H [Institute for Nuclear Studies, Warsaw (Poland); Billmeier, A [Fachbereich Physik der Universitaet Frankfurt, Frankfurt (Germany); Blume, C [Gesellschaft fuer Schwerionenforschung (GSI), Darmstadt (Germany); Boimska, B [Institute for Nuclear Studies, Warsaw (Poland); Botje, M [NIKHEF, Amsterdam (Netherlands); Bracinik, J [Comenius University, Bratislava (Slovakia); Bramm, R [Fachbereich Physik der Universitaet Frankfurt, Frankfurt (Germany); Brun, R [CERN, Geneva (Switzerland); Buncic, P [Fachbereich Physik der Universitaet Frankfurt, Frankfurt (Germany)] [and others

    2004-01-01

    New results from the energy scan programme of NA49, in particular kaon production at 30 A GeV and {phi} production at 40 and 80 A GeV are presented. The K{sup +}/{pi}{sup +} ratio shows a pronounced maximum at 30 A GeV; the kaon slope parameters are constant at SPS energies. Both findings support the scenario of a phase transition at about 30 A GeV beam energy. The {phi}/{pi} ratio increases smoothly with beam energy, showing an energy dependence similar to K{sup -}/{pi}{sup -}. The measured particle yields can be reproduced by a hadron gas model, with chemical freeze-out parameters on a smooth curve in the T-{mu}{sub B} plane. The transverse spectra can be understood as resulting from a rapidly expanding, locally equilibrated source. No evidence for an earlier kinetic decoupling of heavy hyperons is found.

  5. Analisis senyawa volatil dari ekstrak tanaman yang berpotensi sebagai atraktan parasitoid telur wereng batang coklat, Anagrus nilaparvatae (Pang et Wang (Hymenoptera: Mymaridae

    Directory of Open Access Journals (Sweden)

    Surjani Wonorahardjo

    2015-09-01

    Full Text Available Plants produce volatiles as communication cues intra- or inter- species. Infested plants by herbivores will produce volatiles as indirect defense mechanism that attracts natural enemies of herbivores. Analysis of volatiles compounds produced by rice plant as result of infested brown plant hopper (BPH, Nilaparvata lugens Stâl, was done to identify compounds in the volatiles that potentially can be used as attractant for egg parasitoids of BPH, Anagrus nilaparvatae (Pang et Wang (Hymenoptera: Mymaridae. This research was an early stage to develop formulation of parasitoid attractant. The research activities include volatiles extraction of infested rice stem by BPH eggs using acetone, n-hexane as the extraction solvents; analyses of volatile compounds with GC-MS; and bioassay of parasitoid orientation behavior to the volatiles using olfactometer methods. Extraction methods applied were maceration and continuous extraction followed by concentration. Bioassay on the parasitoid orientation behavior was done by using Y-tube olfactometer and every lot of bioassay using 30 parasitoid females with 3 replicates. The results showed that the volatile compounds of extract of infested rice stem by BPH eggs comprise of 16 components. The highest proportion of the components extracted with acetone is 2-Pentanone, 4-hydroxy-4-methyl (19,9%, while those with n-hexane is Hexanedioic acid, dioctyl ester (65%. A. nilaparvatae showed positive response to the volatiles extracted from infested rice plant by N. lugens eggs. Therefore, the volatiles can be used as an attractant for the egg A. nilaparvatae to support rice pest management.

  6. Bi surfactant mediated growth for fabrication of Si/Ge nanostructures and investigation of Si/Ge intermixing by STM

    Energy Technology Data Exchange (ETDEWEB)

    Paul, N.

    2007-10-26

    In the thesis work presented here, we show that Bi is more promising surfactant material than Sb. We demonstrate that by using Bi as a terminating layer on Ge/Si surface, it is possible to distinguish between Si and Ge in Scanning tunnelling microscope (STM). Any attempt to utilize surfactant mediated growth must be preceded by a thorough study of its effect on the the system being investigated. Thus, the third chapter of this thesis deals with an extensive study of the Bi surfactant mediated growth of Ge on Si(111) surface as a function of Ge coverage. The growth is investigated from the single bilayer Ge coverage till the Ge coverage of about 15 BL when the further Ge deposition leads to two-dimensional growth. In the fourth chapter, the unique property of Bi terminating layer on Ge/Si surface to result in an STM height contrast between Si and Ge is explained with possible explanations given for the reason of this apparent height contrast. The controlled fabrication of Ge/Si nanostructures such as nanowires and nanorings is demonstrated. A study on Ge-Si diffusion in the surface layers by a direct method such as STM was impossible previously because of the similar electronic structure of Ge and Si. Since with the Bi terminating surface layer, one is able to distinguish between Ge and Si, the study of intermixing between them is also possible using STM. This method to distinguish between Si and Ge allows one to study intermixing on the nanoscale and to identify the fundamental diffusion processes giving rise to the intermixing. In Chapter 5 we discuss how this could prove useful especially as one could get a local probe over a very narrow Ge-Si interface. A new model is proposed to estimate change in the Ge concentration in the surface layer with time. The values of the activation energies of Ge/Si exchange and Si/Ge exchange are estimated by fitting the experimental data with the model. The Ge/Si intermixing has been studied on a surface having 1 ML Bi ({radical

  7. High efficiency low cost GaAs/Ge cell technology

    Science.gov (United States)

    Ho, Frank

    1990-01-01

    Viewgraphs on high efficiency low cost GaAs/Ge cell technology are presented. Topics covered include: high efficiency, low cost GaAs/Ge solar cells; advantages of Ge; comparison of typical production cells for space applications; panel level comparisons; and solar cell technology trends.

  8. Symmetry in the insulator - quantum Hall - insulator transitions observed in a Ge/SiGe quantum well

    OpenAIRE

    Hilke, M.; Shahar, D.; Song, Sh.; Tsui, DC; Xie, YH; Monroe, D.

    1997-01-01

    We examine the magnetic field driven insulator-quantum Hall-insulator transitions of the two dimensional hole gas in a Ge/SiGe quantum well. We observe direct transitions between low and high magnetic field insulators and the $\

  9. Fabrication of Ge-on-insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers

    Science.gov (United States)

    Kim, Munho; Cho, Sang June; Jayeshbhai Dave, Yash; Mi, Hongyi; Mikael, Solomon; Seo, Jung-Hun; Yoon, Jung U.; Ma, Zhenqiang

    2018-01-01

    Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward electronic and optoelectronic devices. Among various fabrication techniques, the Smart-CutTM technique is more attractive than other methods because a high temperature annealing process can be avoided. Another advantage of Smart-CutTM is the reusability of the donor Ge wafer. However, it is very difficult to realize an undamaged Ge wafer because there exists a large mismatch in the coefficient of thermal expansion among the layers. Although an undamaged donor Ge wafer is a prerequisite for its reuse, research related to this issue has not yet been reported. Here we report the fabrication of 4-inch GeOI substrates using the direct wafer bonding and Smart-CutTM process with a low thermal budget. In addition, a thermo-mechanical simulation of GeOI was performed by COMSOL to analyze induced thermal stress in each layer of GeOI. Crack-free donor Ge wafers were obtained by annealing at 250 °C for 10 h. Raman spectroscopy and x-ray diffraction (XRD) indicated similarly favorable crystalline quality of the Ge layer in GeOI compared to that of bulk Ge. In addition, Ge p-n diodes using transferred Ge NM indicate a clear rectifying behavior with an on and off current ratio of 500 at ±1 V. This demonstration offers great promise for high performance transferrable Ge NM-based device applications.

  10. Using game theory to investigate the epigenetic control mechanisms of embryo development. Comment on: ;Epigenetic game theory: How to compute the epigenetic control of maternal-to-zygotic transition; by Qian Wang et al.

    Science.gov (United States)

    Zhang, Le; Zhang, Shaoxiang

    2017-03-01

    A body of research [1-7] has already shown that epigenetic reprogramming plays a critical role in maintaining the normal development of embryos. However, the mechanistic quantitation of the epigenetic interactions between sperms and oocytes and the related impact on embryo development are still not clear [6,7]. In this study, Wang et al., [8] develop a modeling framework that addresses this question by integrating game theory and the latest discoveries of the epigenetic control of embryo development.

  11. Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

    Directory of Open Access Journals (Sweden)

    Hung-Pin Hsu

    2013-01-01

    Full Text Available We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW structure on Ge-on-Si virtual substrate (VS grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.

  12. A mathematical view for ordinary differential equation models. Comment on ;Epigenetic game theory: How to compute the epigenetic control of maternal-to-zygotic transition; by Qian Wang et al.

    Science.gov (United States)

    Fu, Guifang

    2017-03-01

    Qian Wang et al. have written an interesting article to propose a modeling framework named epiGame in this issue of Physics of Life Reviews [1]. The epiGame framework models how the methylation state of paternal and maternal genomes regulates the embryogenesis as an ecological system in which two highly distinct and specialized gametes coordinate through either cooperation or competition, or both, to maximize the fitness of embryos. Qian Wang et al. also provide solid simulation studies and real data analysis to validate the correctness of their epiGame framework. The importance of embryo development and fertility mechanism cannot be overemphasized, hence, I think that the present review by Qian Wang et al. will stand as a useful modeling guide for practicing biologists or researchers in fertility health to quantify how sperms and oocytes interact through epigenetic process to determine embryo development. In addition, it will serve as a source of many important references to work in the reproductive biology field.

  13. Addition of Mn to Ge quantum dot surfaces--interaction with the Ge QD {105} facet and the Ge(001) wetting layer.

    Science.gov (United States)

    Nolph, C A; Kassim, J K; Floro, J A; Reinke, P

    2013-08-07

    The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T control magnetism in the Mn-Ge system.

  14. Topological phase transition in the two-dimensional anisotropic Heisenberg model: A study using the Replica Exchange Wang-Landau sampling

    Science.gov (United States)

    Figueiredo, T. P.; Rocha, J. C. S.; Costa, B. V.

    2017-12-01

    Although the topological Berezinskii-Kosterlitz-Thouless transition was for the first time described by 40 years ago, it is still a matter of discussion. It has been used to explain several experiments in the most diverse physical systems. In contrast with the ordinary continuous phase transitions the BKT-transition does not break any symmetry. However, in some contexts it can easily be confused with other continuous transitions, in general due to an insufficient data analysis. The two-dimensional XY (or sometimes called planar rotator) spin model is the fruit fly model describing the BKT transition. As demonstrated by Bramwell and Holdsworth (1993) the finite-size effects are more important in two-dimensions than in others due to the logarithmic system size dependence of the properties of the system. Closely related is the anisotropic two dimensional Heisenberg model (AH). Although they have the same Hamiltonian the spin variable in the former has only two degrees of freedom while the AH has three. Many works treat the AH model as undergoing a transition in the same universality class as the XY model. However, its characterization as being in the BKT class of universality deserve some investigation. This paper has two goals. First, we describe an analytical evidence showing that the AH model is in the BKT class of universality. Second, we make an extensive simulation, using the numerical Replica Exchange Wang-Landau method that corroborate our analytical calculations. From our simulation we obtain the BKT transition temperature as TBKT = 0 . 6980(10) by monitoring the susceptibility, the two point correlation function and the helicity modulus. We discuss the misuse of the fourth order Binder's cumulant to locate the transition temperature. The specific heat is shown to have a non-critical behavior as expected in the BKT transition. An analysis of the two point correlation function at low temperature, C(r) ∝r - η(T), shows that the exponent, η, is consistent

  15. Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)

    Energy Technology Data Exchange (ETDEWEB)

    De Schutter, B., E-mail: deschutter.bob@ugent.be; Detavernier, C. [Department of Solid-State Sciences, Ghent University, Krijgslaan 281/S1, 9000 Ghent (Belgium); Van Stiphout, K.; Santos, N. M.; Vantomme, A. [Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium); Bladt, E.; Bals, S. [Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Jordan-Sweet, J.; Lavoie, C. [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Comrie, C. M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa)

    2016-04-07

    We studied the solid-phase reaction between a thin Ni film and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situ X-ray diffraction and in situ Rutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide with a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. The complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations.

  16. Thermophysical properties of Si, Ge and Si-Ge melts under microgravity

    Energy Technology Data Exchange (ETDEWEB)

    Chathoth, Suresh Mavila; Damaschke, Bernd; Samwer, Konrad [I. Physikalisches Institut, Universitaet Goettingen, 37077 Goettingen (Germany)

    2007-07-01

    The liquid Si and Ge are highly reactive materials. Especially the liquid Si is known to reactive with almost all materials. To have an accurate values of thermophysical properties of these melts container less processing is required. The container less processing can be realized by electromagnetic or electrostatic levitation. These ground based levitation techniques have demerits of gravity driven convection and accuracy of the data depend on convection currents. The thermophysical properties of Si, Ge and Si-Ge alloy melts have been investigated in the TEMPUS facility on board of Zero-G plane during the parabolic flights. Unlike metallic alloys which can melt in a magnetic field, Si, Ge and Si-Ge are semiconductors in their sold state a laser pre-heating was necessary to melt these samples. The melted droplets were video taped and from the images the thermal expansion and surface tension of the samples were evaluated. Absence of gravity driven convection a separation of the influence of gravity induced convection become possible by comparing the data with ground based experiments.

  17. Photoluminescence Properties in Ge Nanoclusters Formed by Nitridation of Ge Surface Modified by Dry Etching (abstract)

    Science.gov (United States)

    Jeong, Kiyoung; Jang, Seunghun; Ko, Changhun; Park, Kyoungwan; Han, Moonsup

    2009-04-01

    Nano-size metals and semiconductors self-assembled in the dielectric matrix have recently shown strong possibility in the development of memory and optical devices. We report the optical properties of the Ge nanoclusters in the GeNx matrix by analyzing photoluminescence (PL) spectroscopy data. Ge thin film (5-10 nm) was grown by the molecular beam epitaxy method on Si(100) wafer and dry-etched by Ar+ plasma. The nitridation and rapid thermal annealing of Ge thin film were applied by the ion gun and e-beam heating methods, respectively. All processes were performed in situ in the ultra-high vacuum. Taking out the sample in air, we obtained the surface roughness of the film with about 1-2 nm from the atomic force microscopy data analysis. We measured the PL spectra at the room temperature and 150° K and determined the PL peak positions at 400, 500, and 600 nm. We suggest an annealing method for controlling the size and density of Ge nanoclusters and discuss the results of the conventional method using the strain effect of substrate orientation and ion implantation.

  18. El análisis del registro en la traducción literaria chino-español : un estudio de la novela de Yu Hua ¡Vivir!

    OpenAIRE

    Casas-Tost, Helena

    2015-01-01

    El registro y sus tres variables –campo, tenor y modo– es un concepto estudiado en la lingüística sistémico-funcional que ha sido introducido al campo de la traductología como herramienta eficaz para crear un modelo funcional de análisis textual para la traducción. En este artículo queremos verificar el funcionamiento del análisis del registro para evaluar la traducción literaria chino-español, tomando la novela Huozhe (活着) de Yu Hua (余华) y su traducción ¡Vivir! como corpus de trabajo. La lau...

  19. Walking from 750 GeV to 950 GeV in the technipion zoo

    Science.gov (United States)

    Matsuzaki, Shinya; Yamawaki, Koichi

    2016-06-01

    If the 750-GeV diphoton excess is identified with the color-singlet isosinglet technipion P0 (750) in the one-family walking technicolor model, as in our previous paper, then there should exist another color-singlet technipion-isotriplet one, P±,3, predicted at around 950 GeV independently of the dynamical details. The P±,3(950 ) are produced at the LHC via vector-boson and photon-fusion processes, predominantly decaying to W γ and γ γ , respectively. Those walking technicolor signals can be explored at run 2 or 3, which would further open the door for a plethora of other (colored) technipions.

  20. SiGe thin-film structures for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bremond, G.; Daami, A.; Laugier, A. [Inst. National des Sciences Appliquees de Lyon, Villeurbanne (France). Lab. de Physique de la Matiere] [and others

    1998-12-31

    In order to study their applicability as the active base material in Si thin crystalline film solar cell technology, SiGe relaxed layers grown by Liquid Phase Epitaxy (LPE) and Chemical Vapor Deposition (CVD) on Si substrates are investigated by optical and electrical measurements (TEM, EXD, PL, EBIC). The main results of this work is to point out the improvement of the SiGe active base layer by using smooth Ge graded SiGe buffer layer and remote plasma hydrogenation. TEM, EXD, PL experiments show the effect of the Ge graded buffer layer grown using LPE, by confining the threading dislocations in the SiGe buffer layer close to the Si/SiGe interface. EBIC measurements reveal low recombination activity of dislocations at 300 K providing the diffusion length exceeds the 15 {micro}m layer thickness. The enhanced luminescence of SiGe near bandgap indicates that remote plasma hydrogenation induces a decrease of the non-radiative recombination pathways due to dislocations on CVD layers where defect recombinations dominate as indicated by EBIC measurements. This study points out the importance of controlling relaxed SiGe layers with good minority carrier recombination quality as a key issue for the optimization of new SiGe/Si based solar cells.

  1. Shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowires

    Science.gov (United States)

    Wen, Feng; Dillen, David C.; Kim, Kyounghwan; Tutuc, Emanuel

    2017-06-01

    We investigate the shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowire heterostructures grown using a combination of a vapor-liquid-solid (VLS) growth mechanism for the core, followed by in-situ epitaxial shell growth using ultra-high vacuum chemical vapor deposition. Cross-sectional transmission electron microscopy reveals that the VLS growth yields cylindrical Ge, and Si nanowire cores grown along the ⟨111⟩, and ⟨110⟩ or ⟨112⟩ directions, respectively. A hexagonal cross-sectional morphology is observed for Ge-SixGe1-x core-shell nanowires terminated by six {112} facets. Two distinct morphologies are observed for Si-SixGe1-x core-shell nanowires that are either terminated by four {111} and two {100} planes associated with the ⟨110⟩ growth direction or four {113} and two {111} planes associated with the ⟨112⟩ growth direction. We show that the Raman spectra of Si- SixGe1-x are correlated with the shell morphology thanks to epitaxial growth-induced strain, with the core Si-Si mode showing a larger red shift in ⟨112⟩ core-shell nanowires compared to their ⟨110⟩ counterparts. We compare the Si-Si Raman mode value with calculations based on a continuum elasticity model coupled with the lattice dynamic theory.

  2. Electronic structure of Ge-2 and Ge-2 and thermodynamic properties of Ge-2 from all electron ab initio investigations and Knudsen effusion mass spectroscopic measurements

    DEFF Research Database (Denmark)

    Shim, Irene; Baba, M. Sai; Gingerich, K.A.

    2002-01-01

    The low-lying states of the molecule Ge-2 and of the ion Ge-2(-) have been investigated by all electron ab initio multiconfiguration self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) calculations. The relativistic corrections for the Darwin contact term and for t...

  3. Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

    Directory of Open Access Journals (Sweden)

    Guangyang Lin

    2016-09-01

    Full Text Available Direct band electroluminescence (EL from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs on a Ge virtual substrate (VS at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L and injection current density (J with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH valance band at higher temperatures.

  4. Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications

    Science.gov (United States)

    Wang, Suyuan; Zheng, Jun; Xue, Chunlai; Li, Chuanbo; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

    2017-11-01

    We present the device simulations of analog and radio frequency (RF) performances of four double-gate pocket n-type tunneling field-effect transistors (NTFETs). The direct current (DC), analog and RF performances of the Ge-homo, GeSn-homo, GeSn/Ge and GeSn/GeSiSn NTFETs, are compared. The GeSn NTFETs greatly improve the on-state current (ION) and average subthreshold slope (SS), when compared with the Ge NTFET. Moreover, the GeSn/GeSiSn NTFET has the largest intrinsic gain (Av), and exhibits a suppressed ambipolar behavior, improved cut-off frequency (fT), and gain bandwidth product (GBW), according to the analyzed analog and RF figures of merit (FOM). Therefore, it can be concluded that the GeSn/GeSiSn NTFET has great potential as a promising candidate for the realization of future generation low-power analog/RF applications.

  5. In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

    DEFF Research Database (Denmark)

    Shimura, Y.; Takeuchi, S.; Nakatsuka, O.

    2012-01-01

    We have investigated the Ga and Sn content dependence of the crystallinity and electrical properties of Ga-doped Ge1-xSnx layers that are heteroepitaxially grown on Ge(001) substrates. The doping of Ga to levels as high as the solubility limit of Ga at the growth temperature leads to the introduc......We have investigated the Ga and Sn content dependence of the crystallinity and electrical properties of Ga-doped Ge1-xSnx layers that are heteroepitaxially grown on Ge(001) substrates. The doping of Ga to levels as high as the solubility limit of Ga at the growth temperature leads...... to the introduction of dislocations, due to the increase in the strain of the Ge1-xSnx layers. We achieved the growth of a fully strained Ge0.922Sn0.078 layer on Ge with a Ga concentration of 5.5×1019 /cm3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge1-xSnx layer decreased as the Sn...... content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge1-xSnx epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge0.950Sn0.050 layer annealed at 600°C...

  6. Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

    Directory of Open Access Journals (Sweden)

    Bo Zhang

    2014-01-01

    Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

  7. SiGe HBTs Optimization for Wireless Power Amplifier Applications

    Directory of Open Access Journals (Sweden)

    Pierre-Marie Mans

    2010-01-01

    Full Text Available This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile is conducted in order to improve the fT values at high injection levels.

  8. High-pressure structural behavior of nanocrystalline Ge

    DEFF Research Database (Denmark)

    Wang, H.; Liu, J. F.; Yan, H.

    2007-01-01

    The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transi......The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse...... at the transition remains constant. Simplified models for the high-pressure structural behaviour are presented, based on the assumption that a large fraction of the atoms reside in grain boundary regions of the nanocrystalline material. The interface structure plays a significant role in affecting the transition...

  9. Compton profile study of V3Ge and Cr3Ge

    Indian Academy of Sciences (India)

    erties, phonon spectra, electrical resistivity, Knight shift, magnetic susceptibility etc. Consequently, structural ... LMTO and LAPW methods, only a few theoretical studies are reported for Cr3Ge due to the complexity .... Also given here are the theoretical (unfolded) directional Compton profiles for both the materials along the.

  10. Development of NTD Ge Sensors for Superconducting Bolometer

    Science.gov (United States)

    Garai, A.; Mathimalar, S.; Singh, V.; Dokania, N.; Nanal, V.; Pillay, R. G.; Ramakrishnan, S.; Shrivastava, A.; Jagadeesan, K. C.; Thakare, S. V.

    2016-08-01

    Neutron transmutation-doped (NTD) Ge sensors have been prepared by irradiating device-grade Ge with thermal neutrons at Dhruva reactor, BARC, Mumbai. These sensors are intended to be used for the study of neutrinoless double beta decay in ^{124}Sn with a superconducting Tin bolometer. Resistance measurements are performed on NTD Ge sensors in the temperature range 100-350 mK. The observed temperature dependence is found to be consistent with the variable-range hopping mechanism.

  11. Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures

    OpenAIRE

    Kral, S.; Zeiner, C.; St?ger-Pollach, M.; Bertagnolli, E.; Den Hertog, M.I.; Lopez-Haro, M.; Robin, E.; El Hajraoui, K.; Lugstein, A.

    2015-01-01

    In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor?liquid?solid grown Ge nanowire and Al contact pads due to the substantially different diffusion behavior of Ge in Al and vice versa. Temperature-dependent I?V measurements revealed the metallic properties of the crystalline Al nanowire segments with a maximum current carrying...

  12. Explosive electron emission from flat Ge crystals

    Energy Technology Data Exchange (ETDEWEB)

    Porshyn, Vitali; Mingels, Stephan; Luetzenkirchen-Hecht, Dirk; Mueller, Guenter [University of Wuppertal (Germany)

    2016-07-01

    During the search for photo-induced field emission from flat semiconductors, which might provide high brightness electron beams, we have found with our new ultra-high vacuum measurement system explosive electron emission (EEE) from n-doped Ge crystals resulting in high current pulses of ∝100 A and ∝4 ns duration. This effect reproducibly appears in a narrow photon energy range of 3.2-3.6 eV with a quantum efficiency of up to 20%. Moreover, the EEE current does not depend on the surface field but on the extraction voltage (500-3000 V). EEE is a well known plasma-induced effect for locally heated metals resulting in a crater-like destruction of the surface. For Ge, however, it appears at a factor of 20 lower power density (0.3 MW/cm{sup 2}) of the pulsed laser, and each current pulse forms a new crater of ∝10 μm size. The measured EEE spectra show a similar FWHM (< 1 eV) as photo emitted electrons. Potential applications, e.g. in microwave tubes or gyrotrons, will be discussed.

  13. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  14. The first acceleration to 300 GeV

    CERN Multimedia

    CERN PhotoLab

    1976-01-01

    After the acceleration to 80 GeV in May the 200 GeV energy was attained on June 4, followed by a successful attempt to reach 300 GeV and then 400 GeV by the Council session on June 17. Here at the desk (centre) Boris Milman and Bas de Raad, (right) Pat Mills and a machine operator. Then standing on the back Jacques Althaber, Simon Van der Meer, Hans-Peter Kindermann, Raymond Rausch, John Adams, Klaus Batzner, and still back Antonio Millich, Jim Allaby, Wim Middelkoop, Bo Angerth, Hans Horisberger.

  15. Impacts of excimer laser annealing on Ge epilayer on Si

    Science.gov (United States)

    Huang, Zhiwei; Mao, Yichen; Yi, Xiaohui; Lin, Guangyang; Li, Cheng; Chen, Songyan; Huang, Wei; Wang, Jianyuan

    2017-02-01

    The impacts of excimer laser annealing on the crystallinity of Ge epilayers on Si substrate grown by low- and high-temperature two-step approach in an ultra-high vacuum chemical vapor deposition system were investigated. The samples were treated by excimer laser annealing (ELA) at various laser power densities with the temperature above the melting point of Ge, while below that of Si, resulting in effective reduction of point defects and dislocations in the Ge layer with smooth surface. The full-width at half-maximum (FWHM) of X-ray diffraction patterns of the low-temperature Ge epilayer decreases with the increase in laser power density, indicating the crystalline improvement and negligible effect of Ge-Si intermixing during ELA processes. The short laser pulse time and large cooling rate cause quick melting and recrystallization of Ge epilayer on Si in the non-thermal equilibrium process, rendering tensile strain in Ge epilayer as calculated quantitatively with thermal mismatch between Si and Ge. The FWHM of X-ray diffraction patterns is significantly reduced for the two-step grown samples after treated by a combination of ELA and conventional furnace thermal annealing, indicating that the crystalline of Ge epilayer is improved more effectively with pre- annealing by excimer laser.

  16. The Proposed Majorana 76Ge Double-Beta Decay Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Aalseth, Craig E; Anderson, Dale N; Arthur, Richard J; Avignone, Frank; Baktash, Cryus; Ball, Thedore; Barabash, Alexander S; Bertrand, F; Brodzinski, Ronald L; Brudanin, V; Bugg, William; Champagne, A E; Chan, Yuen-Dat; Cianciolo, Thomas V; Collar, J I; Creswick, R W; Descovich, M; Di Marco, Marie; Doe, P J; Dunham, Glen C; Efremenko, Yuri; Egerov, V; Ejiri, H; Elliott, Steven R; Emanuel, A; Fallon, Paul; Farach, H A; Gaitskell, R J; Gehman, Victor; Grzywacz, Robert; Hallin, A; Hazma, R; Henning, R; Hime, Andrew; Hossbach, Todd W; Jordan, David V; Kazkaz, K; Kephart, Jeremy; King, G S; Kochetov, Oleg; Konovalov, S; Kouzes, Richard T; Lesko, Kevin; Luke, P; Luzum, M; Macchiavelli, A O; McDonald, A; Mei, Dongming; Miley, Harry S; Mills, G B; Mokhtarani, A; Nomachi, Masaharu; Orrell, John L; Palms, John M; Poon, Alan; Radford, D C; Reeves, James H; Robertson, R G. H.; Runkle, Robert C; Rykaczewski, Krzysztof P; Saburov, Konstantin; Sandukovsky, Viatcheslav; Sonnenschein, Andrew; Tornow, W; Tull, C; van de Water, R G; Vanushin, Igor; Vetter, Kai; Warner, Ray A; Wilkerson, John F; Wouters, Jan M; Young, A R; Yumatov, V

    2005-01-01

    The proposed Majorana experiment is based on an array of segmented intrinsic Ge detectors with a total mass of 500 kg of Ge isotopically enriched to 86% in 76Ge. Background reduction will be accomplished by: material selection, detector segmentation, pulse shape analysis, electro-formation of copper parts, and granularity of detector spacing. The predicted experimental sensitivity for measurement of the neutrinoless double-beta decay mode of 76Ge, over a data acquisition period of 5000 kg•y, is ~ 4 x 1027 y.

  17. Efficacy and adequacy of conventional transbronchial needle aspiration of IASLC stations 4R, 4L and 7 using endobronchial landmarks provided by the Wang nodal mapping system in the staging of lung cancer.

    Science.gov (United States)

    Liu, Qinghua; Han, Songyan; Arias, Sixto; Turner, J Francis; Lee, Hans; Browning, Robert; Wang, Ko-Pen

    2016-01-01

    The role of transbronchial needle aspiration (TBNA) in the diagnosis and staging of lung cancer has been well established. Recently, the efficacy of conventional TBNA in the staging of lung cancer has been enhanced by the use of endobronchial ultrasound (EBUS)-TBNA. Our study sought to evaluate the adequacy of TBNA of International Association for the Study of Lung Cancer (IASLC) stations 4R, 4L and 7 using endobronchial landmarks provided by the Wang nodal mapping system in the staging of lung cancer. We retrospectively analyzed all bronchoscopic cases with conventional TBNA punctures positive for malignancy at our institution from 1 January to 31 October 2014. The endobronchial puncture site was guided by the Wang nodal mapping system. The Wang stations were correlated with the IASLC lymph node map. No endobronchial ultrasound or rapid on-site evaluation was used. Pathological analysis included cytological and histological examination. Diagnosis by histological analysis was obtained in 115 (55.3%) out of 208 puncture sites. The metastatic lymph nodes were distributed at IASLC stations 4R (W1, 3, 5) 46.6 %, 7 (W2, 8, 10) 19.7%, 4L (W4, 6) 11.5%, 11R (W7, W9) 11.1% 11L (W11) 9.6%, 2R (high station W3) 0.5%, and the proximal portion of station 8 (station W10 beyond the middle lobe orifice) 1%. No complications were observed. IASLC station 4R (W1, 3, 5), 7 (W2, 8, 10) and 4L (W4, 6) are adequate for the staging of lung cancer.

  18. Epigenetic information in gametes: Gaming from before fertilization. Comment on ;Epigenetic game theory: How to compute the epigenetic control of maternal-to-zygotic transition; by Qian Wang et al.

    Science.gov (United States)

    Shi, Junchao; Zhang, Xudong; Liu, Ying; Chen, Qi

    2017-03-01

    In their interesting article [1] Wang et al. proposed a mathematical model based on evolutionary game theory [2] to tackle the fundamental question in embryo development, that how sperm and egg interact with each other, through epigenetic processes, to form a zygote and direct successful embryo development. This work is based on the premise that epigenetic reprogramming (referring to the erasure and reconstruction of epigenetic marks, such as DNA methylation and histone modifications) after fertilization might be of paramount importance to maintain the normal development of embryos, a premise we fully agree, given the compelling experimental evidence reported [3]. Wang et al. have specifically chosen to employ the well-studied DNA methylation reprogramming process during mammalian early embryo development, as a basis to develop their mathematical model, namely epigenetic game theory (epiGame). They concluded that the DNA methylation pattern in mammalian early embryo could be formulated and quantified, and their model can be further used to quantify the interactions, such as competition and/or cooperation of expressed genes that maximize the fitness of embryos. The efforts by Wang et al. in quantitatively and systematically analyzing the beginning of life apparently hold value and represent a novel direction for future embryo development research from both theoretical and experimental biologists. On the other hand, we see their theory still at its infancy, because there are plenty more parameters to consider and there are spaces for debates, such as the cases of haploid embryo development [4]. Here, we briefly comment on the dynamic process of epigenetic reprogramming that goes beyond DNA methylation, a dynamic interplay that involves histone modifications, non-coding RNAs, transposable elements et al., as well as the potential input of the various types of 'hereditary' epigenetic information in the gametes - a game that has started before the fertilization.

  19. Using game theory to investigate the epigenetic control mechanisms of embryo development: Comment on: "Epigenetic game theory: How to compute the epigenetic control of maternal-to-zygotic transition" by Qian Wang et al.

    Science.gov (United States)

    Zhang, Le; Zhang, Shaoxiang

    2017-03-01

    A body of research [1-7] has already shown that epigenetic reprogramming plays a critical role in maintaining the normal development of embryos. However, the mechanistic quantitation of the epigenetic interactions between sperms and oocytes and the related impact on embryo development are still not clear [6,7]. In this study, Wang et al., [8] develop a modeling framework that addresses this question by integrating game theory and the latest discoveries of the epigenetic control of embryo development. Copyright © 2017 Elsevier B.V. All rights reserved.

  20. Compositional dependencies in the vibrational properties of amorphous Ge-As-Se and Ge-Sb-Te chalcogenide alloys studied by Raman spectroscopy

    Science.gov (United States)

    Shportko, K.; Revutska, L.; Paiuk, O.; Baran, J.; Stronski, A.; Gubanova, A.; Venger, E.

    2017-11-01

    This work is focused on the compositional dependencies in the Raman spectra of amorphous Ge-As-Se and Ge-Sb-Te chalcogenides with the systematic increase of the Ge-content. Studied Ge-As-Se and Ge-Sb-Te chalcogenides are promising for applications in the photonics, optical, and electronic data storages. Gaussians used to fit the obtained Raman spectra were attributed to the vibrations of the structural units in Ge-Sb-Te and Ge-As-Se samples. Systematic compositional dependencies of the intensities of the characteristic Raman bands correlate with evolution of concentration of the different structural units in Ge-Sb-Te and Ge-As-Se alloys along the studied compositional lines. Obtained compositional trends in the intensities of Raman bands may enable one to predict vibrational properties of other amorphous Ge-Sb-Te and Ge-As-Se chalcogenides.

  1. Magnetic and electrical properties of epitaxial GeMn

    Energy Technology Data Exchange (ETDEWEB)

    Ahlers, Stefan

    2009-01-15

    In this work, GeMn magnetic semiconductors will be investigated. The fabrication of GeMn thin films with Mn contents up to 11.7% was realised with molecular beam epitaxy. At a fabrication temperature of 60 C, the suppression of Mn{sub x}Ge{sub y} phases could reproducibly be obtained. Dislocation free epitaxy of diamond-lattice type GeMn thin films was observed. In all fabrication conditions where Mn{sub x}Ge{sub y} suppression was feasible, an inhomogeneous dispersion of Mn was observed in form of a self-assembly of nanometre sized, Mn rich regions in a Ge rich matrix. Each Mn rich region exhibits ferromagnetic coupling with high Curie temperatures exceeding, in part, room temperature. The local ferromagnetic ordering leads to the formation of large, spatially separated magnetic moments, which induce a superparamagnetic behaviour of the GeMn thin films. At low temperatures {<=} 20 K, remanent behaviour was found to emerge. X-ray absorption experiments revealed a similarity of the Mn incorporation in diamond-lattice type GeMn thin films and in the hexagonal lattice of the intermetallic Mn{sub 5}Ge{sub 3} phase, respectively. These tetrahedra represent building blocks of the Mn{sub 5}Ge{sub 3} unit cell. The incorporation of Mn{sub 5}Ge{sub 3} building blocks was found to be accompanied by local structural disorder. The electrical properties of GeMn thin films were addressed by transport measurements. It was shown that by using a n-type Ge substrate, a pn energy barrier between epilayers and substrate to suppress parallel substrate conduction paths can be introduced. With the pn barrier concept, first results on the magnetotransport behaviour of GeMn thin films were obtained. GeMn was found to be p-type, but of high resistivity. a series of GeMn thin films was fabricated, where intermetallic Mn{sub x}Ge{sub y} phase separation was supported in a controlled manner. Phase separation was found to result in the formation of partially coherent, nanometre sized Mn{sub 5

  2. Compton profiles and band structure calculations of IV-VI layered compounds GeS and GeSe

    Science.gov (United States)

    Rathor, A.; Sharma, V.; Heda, N. L.; Sharma, Y.; Ahuja, B. L.

    2008-04-01

    First ever isotropic experimental Compton profiles of GeS and GeSe are presented. Moreover, we present Compton profiles, energy bands and density of states (DOS) using Hartree-Fock, density functional and pseudopotential schemes. It is seen that the Hartree-Fock and density functional theories show a reasonable agreement with the experiment. The equal-valence-electron-density profiles show that GeS is more ionic than GeSe. We have also reported energy bands and DOS using full potential linearized augmented plane-wave method.

  3. Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps

    Energy Technology Data Exchange (ETDEWEB)

    Vasko, Stephanie E.; Kapetanovic, Adnan; Talla, Vamsi; Brasino, Michael D.; Zhu, Zihua; Scholl, Andreas; Torrey, Jessica D.; Rolandi, Marco

    2011-05-16

    Precise materials integration in nanostructures is fundamental for future electronic and photonic devices. We demonstrate Si, Ge, and SiGe nanostructure direct-write with deterministic size, geometry, and placement control. The biased probe of an atomic force microscope (AFM) reacts diphenylsilane or diphenylgermane to direct-write carbon-free Si, Ge, and SiGe nano and heterostructures. Parallel directwrite is available on large areas by substituting the AFM probe with conducting microstructured stamps. This facile strategy can be easily expanded to a broad variety of semiconductor materials through precursor selection.

  4. Impact of Ge profile on the performance of PNP SiGe HBT on thin film SOI

    Science.gov (United States)

    Misra, Prasanna K.; Qureshi, S.

    2012-10-01

    The pnp SiGe HBT on thin film SOI is investigated with different Ge profiles using 2D numerical simulations in MEDICI. The base current, collector current, DC current gain, AC voltage gain, unity current gain frequency and breakdown voltage is obtained for a 0.09 × 1.0 μm2 pnp SiGe HBT with triangular (0%-30%), trapezoidal (10%- 20%) and box (15%) Ge profiles in the base layer. The results obtained with the Ge profiles, has been analyzed and compared. The Ft BVCEO product for triangular, trapezoidal and box Ge profiles has been found as 190.8, 401, and 359.6 GHzV respectively. The tradeoff between voltage gain and unity current gain frequency for the Ge profiles has been analyzed. The simulation result suggests that the pnp SiGe HBT on thin film SOI with trapezoidal Ge profile is a potential candidate for the high speed complementary bipolar circuits that can be used in high performance mixed signal applications.

  5. Ab initio study of the structural, electronic, elastic and thermal properties of RMn{sub 2}Ge{sub 2} (R = Ca, Nd and Y) intermetallic compounds

    Energy Technology Data Exchange (ETDEWEB)

    Miloud Abid, O.; Yakoubi, A. [Laboratoire d’Etudes des Matériaux et Instrumentations Expérimentales, Université Djilali Liabes de Sidi Bel-Abbes, 22000 (Algeria); Tadjer, A. [Modeling and Simulation in Materials Science Laboratory, Physics Department, University of Sidi Bel-Abbes, Sidi Bel-Abbes (Algeria); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique de la Modélisation Mathématique (LPQ3M), Université de Mascara, 29000 (Algeria); Ahmed, R. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM Skudai, 81310 Johor (Malaysia); Murtaza, G. [Materials Modeling Laboratory, Department of Physics, Islamia College University, Peshawar (Pakistan); Bin Omran, S. [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Azam, Sikander [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic)

    2014-12-15

    Highlights: • The calculated structural parameters of RMn{sub 2}Ge{sub 2} (R = Ca, Nd and Y) compounds are found in good agreement with the experimental data. • The structural and band structure calculation reveals that these compounds are ferromagnetic brittle metals. • The elastic and thermodynamic properties for the herein studied compounds are investigated for the first time. - Abstract: Intermetallic RMn{sub 2}Ge{sub 2} ternary compounds have attracted considerable attention from researchers in recent years because they show strong indications for novel magnetic characteristics and they have the potential to reveal the mechanism of superlattices. The study of the paramagnetic, ferromagnetic and antiferromagnetic phases affirms the strong dependence to the distance between atomic species in these compounds. In this study, we investigated the structural, elastic, electronic and thermodynamic properties of the intermetallic RMn{sub 2}Ge{sub 2} (R = Ca, Nd and Y) compounds. To carry out this study, we used the full potential (FP) linearized (L) augmented plane wave plus local orbitals (APW + lo), a scheme of calculations developed within the frame work of density functional theory (DFT). To incorporate the exchange correlation (XC) energy and corresponding potential into the total energy calculations, local density approximation (LDA) parameterized by Perdew and Wang is taken into account. Analysis of the density of states (DOS) profile illustrates the conducting nature of these intermetallic compounds; with a predominantly contribution from the R and Mn-d states. At ambient conditions, calculations for elastic constants (C{sub 11}, C{sub 12}, C{sub 13}, C{sub 44}, C{sub 33} and C{sub 66}) are also performed, which point to their brittle character. In addition, the quasi harmonic Debye model was used to predict the thermal properties, together with relative expansion coefficients and heat capacity.

  6. A New Book on the Law System of the Golden Horde: Pochekaev R.Yu. Legal Culture of the Golden Horde (Historical and Legal Essays (Moscow: Yurlitinform, 2015. 312 p.

    Directory of Open Access Journals (Sweden)

    D.V. Nefedov

    2016-12-01

    Full Text Available This book is a study at the intersection of such academic disciplines as general history, history of state and law and source study. The subcect of R.Yu. Pochevalev’s book appears very relevant since the interest of the scientific community and readership toward the Golden Horde and its role in the history of the Russian state remains traditionally high for several centuries. However, the author is trying to take a fresh look at this state and refute the stereotype of the Golden Horde as a some kind of bunch of nomads who lived only by plundering neighboring sedentary peoples. He succeeds in this by studying such an important part of the Golden Horde history as its law and legal culture. The book examines a number of questions on the history of state and law of the Golden Horde, which have not previously been the subject of a special study (for example, possessions of the Golden Horde in other uluses, dualism of power in different states, relations between authorities and traders, etc.. On some other issues that have already been studied by experts, he proposes new interpretations in the framework of historical and legal approach (for example, the causes of intestine strife in the Golden Horde in the mid-14th century, yarliks of the Golden Horde khans granted to the Russian Chruch, relations of the Golden Horde rulers and Italian colonies in the Northern Black Sea region. The author examines to a great extent the themes of state and legal regulation of economic relations: status of merchants in the Golden Horde and post-Golden Horde states, role of economic sanctions in the resolution of political conflicts. In other essays contained in the book, the author also emphasizes the role of the economic component of the political and legal relations. For example, R.Yu. Pochekaev convincingly shows that relations of the Golden Horde with other states of the Mongol Empire was based on the principle of mutual provision of possessions to the rulers of

  7. 3 GeV Injector Design Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  8. Ferromagnetic order in U(Rh, Co)Ge

    NARCIS (Netherlands)

    Huy, N.T.; de Visser, A.

    2009-01-01

    We report the variation of ferromagnetic order in the pseudo-ternary compounds URh1-xCoxGe (0 <= x <= 1). Magnetization and transport data taken on polycrystalline samples show that the Curie temperature T-c gradually increases with increasing Co content from a value of 9.5 K for URhGe to a maximum

  9. Ab initio study of Pt induced nanowires on Ge(001)

    NARCIS (Netherlands)

    Vanpoucke, D.E.P.

    2009-01-01

    The aim of this thesis: “Ab Initio Study of Pt Induced Nanowires on Ge(001)”, is to model the experimentally observed ‘Pt nanowires’ on Ge(001). These one-atom-thick wires can be hundreds of nanometers long while remaining defect and kink free, providing the ultimate wire any chip designer dreams

  10. On the macroscopic formation length for GeV photons

    NARCIS (Netherlands)

    Thomsen, H.D.; Ketel, T.J.

    2009-01-01

    Experimental results for the radiative energy loss of 206 and 234 GeV electrons in 5-10 μm thin Ta targets are presented. An increase in radiation emission probability at low photon energies compared to a 100 μm thick target is observed. This increase is due to the formation length of the GeV

  11. GeNF - Experimental report 2006

    Energy Technology Data Exchange (ETDEWEB)

    Pranzas, P.K.; Schreyer, A.; Willumeit, R. (eds.) [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. of Materials Research

    2007-07-01

    At the Geesthacht Neutron Facility GeNF about 212 experiments were performed in 2006 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 71 contributions in the present annual experimental report for the year 2006. The contributions may contain one or also several combined experiments. During 2006 the GKSS research reactor FRG-1 achieved an operation time of 197 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10{sup 14} thermal neutrons/cm{sup 2}s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at ARES-2, TEX-2, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR, NeRo, POLDI and ROeDI. The thoroughly upgraded residual stress diffractomer ARES-2 went in full operation in spring 2006 as well as the new neutron tomography device at GENRA-3. The installation of modern experiment control hardware and software based on LabView was completed on all designated instruments. In the appendices I and II the experimental reports of REFSANS at FRM II are attached as well as of the GKSS outstation HARWI-II at DESY. Both instruments started full operation in 2006. (orig.)

  12. GeNF - experimental report 2003

    Energy Technology Data Exchange (ETDEWEB)

    Schreyer, A.; Vollbrandt, J.; Willumeit, R. (eds.) [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. for Materials Research

    2004-07-01

    At the Geesthacht Neutron Facility GeNF about 210 experiments were performed in 2003 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guest and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2003. The contributions may contain one or also several combined experiments. During 2003 the GKSS research reactor FRG-1 achieved an operation time of 252 days at the full 5 MW reactor power providing a neutron flux of ca. 1,4 x 10{sup 14} thermal neutrons / cm{sup 2} s. The cold neutron source was available during the complete operation time. The focus of the in house R and D work at GeNF instruments was the characterisation of metal alloys, the analysis of stresses in welds and technical structures at ARES, FSS, DCD and SANS-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at PNR and ROeDI. The reflectomer TOREMA was thoroughly upgraded to the instrument NeRo and now offers new measurement possibilities. In the appendices the progress of the project REFSANS at FRM-II is reported as well as the experimental activities of the newly installed GKSS outstation HARWI-II at DESY. (orig.)

  13. Ultrahigh-pressure structure of GeO2 glass with coordination number >6: implications for structure of magma at the core-mantle boundary

    Science.gov (United States)

    Kono, Y.; Kenney-Benson, C.; Ikuta, D.; Shibazaki, Y.; Wang, Y.; Shen, G.

    2016-12-01

    Silicate magma at the core-mantle boundary is one of the most important components in understanding nature and evolution of the Earth's deep interior. However, structure and properties of silicate magmas at the pressure condition of the core-mantle boundary remain poorly understood, because of experimental challenges. Pioneering work by Murakami and Bass (2010) showed a kink in the pressure dependence of shear-wave velocity in SiO2 glass around 140 GPa, which was interpreted as evidence of ultrahigh pressure structural transition. However, no structural information is available under such high pressures. Here we show new experimental evidence of ultrahigh pressure structural transition in GeO2 glass with Ge-O coordination number (CN) significantly greater than 6, investigated using a newly developed double-stage large volume cell combined with multi-angle energy dispersive X-ray diffraction technique for in situ amorphous structure measurement (Kono et al., 2016). The Ge-O coordination number (CN) is found to remain constant at 6 between 22.6 and 37.9 GPa. At higher pressures, CN begins to increase rapidly to 6.4 at 49.4 GPa and reaches 7.4 at 91.7 GPa. The structural change to CN higher than 6 is closely associated with the change in oxygen packing fraction (OPF). This transformation begins when the OPF in GeO2 glass is close to the maximal dense packing state (the Kepler conjecture= 0.74), which provides new insights into structural changes in network-forming glasses and liquids with CN higher than 6 at ultrahigh pressure conditions. For example, extrapolation of OPF-pressure trend in SiO2 glass shows that OPF of SiO2glass reaches to 0.74 around 108 GPa, where structural change to CN higher than 6 is expected. The data imply that silicate magma at the core-mantle boundary may possess ultrahigh-pressure structure with CN higher than 6. References Kono, Y., Kenney-Benson, C., Ikuta, D., Shibazaki, Y., Wang, Y., & Shen, G. (2016). Ultrahigh-pressure polyamorphism in

  14. Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

    DEFF Research Database (Denmark)

    Vincent, B.; Gencarelli, F.; Bender, H.

    2011-01-01

    In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay...

  15. Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures.

    Science.gov (United States)

    Kral, S; Zeiner, C; Stöger-Pollach, M; Bertagnolli, E; den Hertog, M I; Lopez-Haro, M; Robin, E; El Hajraoui, K; Lugstein, A

    2015-07-08

    In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor-liquid-solid grown Ge nanowire and Al contact pads due to the substantially different diffusion behavior of Ge in Al and vice versa. Temperature-dependent I-V measurements revealed the metallic properties of the crystalline Al nanowire segments with a maximum current carrying capacity of about 0.8 MA/cm(2). Transmission electron microscopy (TEM) characterization has confirmed both the composition and crystalline nature of the pure Al nanowire segments. A very sharp interface between the ⟨111⟩ oriented Ge nanowire and the reacted Al part was observed with a Schottky barrier height of 361 meV. To demonstrate the potential of this approach, a monolithic Al/Ge/Al heterostructure was used to fabricate a novel impact ionization device.

  16. Paramagnetic Mn impurities on Ge and GaAs surfaces

    Science.gov (United States)

    Gambardella, P.; Brune, H.; Dhesi, S. S.; Bencok, P.; Krishnakumar, S. R.; Gardonio, S.; Veronese, M.; Grazioli, C.; Carbone, C.

    2005-07-01

    Individual Mn impurities deposited on Ge(100), Ge(111), and GaAs(110) substrates present magnetic moments significantly larger compared to the average Mn magnetization in bulklike Ga1-xMnxAs and MnxGe1-x dilute magnetic semiconductors. The Mn magnetic moment is shown to change considerably going from Ge(100), to GaAs(110), and Ge(111). Independently of the substrate, the Mn per atom moment decreases with increasing coverage owing to the formation of antiferromagnetic Mn clusters. We observe no evidence of magnetically ordered surface layers down to a temperature of 5K . The comparison of x-ray magnetic circular dichroism line shapes with that of a pure Mn d5 configuration reveals the partial delocalization of the Mn d states.

  17. Polarized proton collisions at 205 GeV at RHIC.

    Science.gov (United States)

    Bai, M; Roser, T; Ahrens, L; Alekseev, I G; Alessi, J; Beebe-Wang, J; Blaskiewicz, M; Bravar, A; Brennan, J M; Bruno, D; Bunce, G; Courant, E; Drees, A; Fischer, W; Gardner, C; Gill, R; Glenn, J; Haeberli, W; Huang, H; Jinnouchi, O; Kewisch, J; Luccio, A; Luo, Y; Nakagawa, I; Okada, H; Pilat, F; Mackay, W W; Makdisi, Y; Montag, C; Ptitsyn, V; Satogata, T; Stephenson, E; Svirida, D; Tepikian, S; Trbojevic, D; Tsoupas, N; Wise, T; Zelenski, A; Zeno, K; Zhang, S Y

    2006-05-05

    The Brookhaven Relativistic Heavy Ion Collider (RHIC) has been providing collisions of polarized protons at a beam energy of 100 GeV since 2001. Equipped with two full Siberian snakes in each ring, polarization is preserved during acceleration from injection to 100 GeV. However, the intrinsic spin resonances beyond 100 GeV are about a factor of 2 stronger than those below 100 GeV making it important to examine the impact of these strong intrinsic spin resonances on polarization survival and the tolerance for vertical orbit distortions. Polarized protons were first accelerated to the record energy of 205 GeV in RHIC with a significant polarization measured at top energy in 2005. This Letter presents the results and discusses the sensitivity of the polarization survival to orbit distortions.

  18. Characteristics of Ge-based ARL for DUV lithography

    Science.gov (United States)

    Kim, Yongbeom; Kim, Dong-Wan; Kang, Hoyoung; Moon, Joo-Tae; Lee, Moon-Yong

    1997-07-01

    Germanium based ARL (Anti Reflective Layer) having high conformality over topography and removable during resist strip process was developed. Its various characteristics were investigated. The ARLs were composed with GeN, and (Ge,Si)Nx and fabricated by reactive RF sputtering. The optical constants of Ge based materials were measured and the ARL performance for DUV lithography was obtained. Since the GENx is dissolved in water during resist develop process, it can not be used. Therefore, silicon was added to solve this problem. Thin film characteristics of (Ge,Si)Nx compound were analyzed using XRD, XPS, AES, SEM. The ARL performance was confirmed by resist patterning. Because the (Ge,Si)Nx material is removable by H2SO4 strip, yet most of current inorganic ARL is not, it has advantages for process simplicity.

  19. GeV dark matter searches with the NEWS detector

    Science.gov (United States)

    Profumo, Stefano

    2016-03-01

    The proposed NEWS apparatus, a spherical detector with a small central electrode sensor operating as a proportional counter, promises to explore new swaths of the direct detection parameter space in the GeV and sub-GeV dark matter particle mass range by employing very light nuclear targets, such as H and He, and by taking advantage of a very low (sub-keV) energy threshold. Here we discuss and study two example classes of dark matter models that will be tested with NEWS: GeV-scale millicharged dark matter, and a GeV-Dirac Fermion dark matter model with a light (MeV-GeV) scalar or vector mediator, and indicate the physical regions of parameter space the experiment can probe.

  20. Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

    Science.gov (United States)

    Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

    2015-07-01

    The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

  1. Molecular beam epitaxy growth of [CrGe/MnGe/FeGe] superlattices: Toward artificial B20 skyrmion materials with tunable interactions

    Science.gov (United States)

    Ahmed, Adam S.; Esser, Bryan D.; Rowland, James; McComb, David W.; Kawakami, Roland K.

    2017-06-01

    Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(1 1 1) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic.

  2. Formation of Pt induced Ge atomic nanowires on Pt/Ge(001): a density functional theory study

    NARCIS (Netherlands)

    Vanpoucke, D.E.P.; Vanpoucke, Danny E.P.; Brocks, G.

    2008-01-01

    Pt deposited onto a Ge001 surface gives rise to the spontaneous formation of atomic nanowires on a mixed Pt-Ge surface after high-temperature annealing. We study possible structures of the mixed surface and the nanowires by total energy density functional theory calculations. Experimental

  3. Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

    Science.gov (United States)

    Fukuda, Yukio; Okamoto, Hiroshi; Iwasaki, Takuro; Otani, Yohei; Ono, Toshiro

    2011-09-01

    We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeNx/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeNx/Ge interface properties. The GeNx/Ge formed at room temperature and treated by PMA at 400 °C exhibits the best interface properties with an interface trap density of 1 × 1011 cm-2 eV-1. The GeNx/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.

  4. Doğrudan Yabancı Yatırımları Belirleyen Faktörler: Yükselen Piyasalar Örneği

    OpenAIRE

    Arık, Arş. Grv. Şebnem; Akay, Öğr. Grv. Dr. A. Beyhan; Zanbak, Arş. Grv. Mehmet

    2016-01-01

    Doğrudan yabancı sermaye yatırımları, yatırım yapılanülke için bir takım sosyal ve ekonomik faydaanlamına gelmekte; istihdamın artırılması, doğalkaynakların etkin olarak değerlendirilmesi, teknikbilgide gelişme, dış ticaret açığının azaltılması ve ekonomikbüyümenin artırılmasına katkı sağlamaktadır.Yabancı yatırımcı açısından ise ucuz girdi kullanımı,hammadde kaynaklarına yakınlık ve yeni pazarlardanfaydalanma gibi fırsatlar yaratmaktadır. Ev sahibi veyatırım yapan ülkeler açısından karşı...

  5. Ion beam synthesis of SiGe alloy layers

    Energy Technology Data Exchange (ETDEWEB)

    Im, Seongil [Univ. of California, Berkeley, CA (United States)

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2 x 1016cm-2, 3 x 1016cm-2 (mid), and 5 x 1016cm-2 (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3 x l016cm-2cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  6. Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

    OpenAIRE

    Tang, Jianshi; Wang, Chiu-Yen; Xiu, Faxian; Zhou, Yi; Chen, Lih-Juann; Wang, Kang L.

    2011-01-01

    We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demonstrated a wide temperature range of 400~500°C to convert the Ge nanowire to a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure with atomically sharp interfaces. More importantly, we studie...

  7. Unexpected Ge-Ge Contacts in the Two-Dimensional Ge4 Se3 Te Phase and Analysis of Their Chemical Cause with the Density of Energy (DOE) Function.

    Science.gov (United States)

    Küpers, Michael; Konze, Philipp M; Maintz, Stefan; Steinberg, Simon; Mio, Antonio M; Cojocaru-Mirédin, Oana; Zhu, Min; Müller, Merlin; Luysberg, Martina; Mayer, Joachim; Wuttig, Matthias; Dronskowski, Richard

    2017-08-14

    A hexagonal phase in the ternary Ge-Se-Te system with an approximate composition of GeSe0.75 Te0.25 has been known since the 1960s but its structure has remained unknown. We have succeeded in growing single crystals by chemical transport as a prerequisite to solve and refine the Ge4 Se3 Te structure. It consists of layers that are held together by van der Waals type weak chalcogenide-chalcogenide interactions but also display unexpected Ge-Ge contacts, as confirmed by electron microscopy analysis. The nature of the electronic structure of Ge4 Se3 Te was characterized by chemical bonding analysis, in particular by the newly introduced density of energy (DOE) function. The Ge-Ge bonding interactions serve to hold electrons that would otherwise go into antibonding Ge-Te contacts. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100

    Directory of Open Access Journals (Sweden)

    Mastura Shafinaz Zainal Abidin

    2014-02-01

    Full Text Available The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100 substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100 orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

  9. Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

    Directory of Open Access Journals (Sweden)

    Jianshi Tang

    2011-01-01

    Full Text Available We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demonstrated a wide temperature range of 400~500°C to convert the Ge nanowire to a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure with atomically sharp interfaces. More importantly, we studied the effect of oxide confinement during the formation of nickel germanides in a Ge nanowire. In contrast to the formation of Ni2Ge/Ge/Ni2Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni2Ge with the confinement of Al2O3 during annealing. A twisted epitaxial growth mode was observed in both two Ge nanowire heterostructures to accommodate the large lattice mismatch in the NixGe/Ge interface. Moreover, we have demonstrated field-effect transistors using the nickel germanide regions as source/drain contacts to the Ge nanowire channel. Our Ge nanowire transistors have shown a high-performance p-type behavior with a high on/off ratio of 105 and a field-effect hole mobility of 210 cm2/Vs, which showed a significant improvement compared with that from unreacted Ge nanowire transistors.

  10. GeNF - Experimental report 2007

    Energy Technology Data Exchange (ETDEWEB)

    Pranzas, P.K.; Schreyer, A.; Willumeit, R. (eds.) [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. fuer Materialforschung

    2008-11-05

    At the Geesthacht Neutron Facility GeNF about 203 experiments were performed in 2007 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests and by the GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 70 contributions in the present annual experimental report for the year 2007. The contributions may contain one or also several combined experiments. During 2007 the GKSS research reactor FRG-1 achieved an operation time of 204 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4 x 10{sup 14} thermal neutrons/cm{sup 2}s. In May/June 2007 the FRG-1 was upgraded with a new cold neutron source yielding a flux increase at the five instruments using cold neutrons of up to 40 %. The focus of the in house R and D work at GeNF instruments in 2007 was the characterisation of nano-structures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. At the neutron reflectometer REFSANS at FRM II measurements are possible using a broad range of the scattering vector with reflectivities up to 10{sup -7}. Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at DESY is accepted very well by the community and is overbooked in all fields

  11. GeNF - Experimental report 2008

    Energy Technology Data Exchange (ETDEWEB)

    Pranzas, Philipp Klaus; Mueller, Martin; Willumeit, Regine; Schreyer, Andreas (eds.) [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Inst. fuer Materialforschung

    2009-12-11

    At the Geesthacht Neutron Facility GeNF about 182 experiments were performed in 2008 by GKSS and by or for external users, partners or contractors. In most cases the measurements were performed and analysed in cooperation by the guests, by GKSS staff or by the permanent external user group staff. The activities, which are based on a proposal procedure and on the in house R and D program, are reported in 76 contributions in the present annual experimental report for the year 2008. The contributions may contain several combined experiments. During 2008 the GKSS research reactor FRG-1 achieved an operation time of 175 days at the full 5 MW reactor power providing a neutron flux of ca. 1.4.10{sup 14} thermal neutrons/cm{sup 2} s. The focus of the in house R and D work at GeNF instruments in 2008 was the characterisation of nanostructures in engineering materials, the analysis of stresses and textures in welds and technical structures at SANS-2, DCD, ARES-2 and TEX-2, the structural investigation of hydrogen containing substances such as polymers, colloids and biological macromolecules at SANS-1 as well as the characterisation of magnetic thin films at NeRo, PNR, POLDI and ROeDI. The modern experiment control hardware (e.g. sample environments, like magnets, cryostats or furnaces) and software based on LabView was continuously improved on all instruments. In the appendices I and II the experimental reports of the GKSS outstation at the FRM II are attached as well as of the GKSS outstation at DESY. The massive activity at the FRM II outstation is documented by the increasing number of REFSANS reports, accumulated to nine. Three reports show the activities of GKSS in the field of texture measurement at the instrument STRESS-SPEC. The instrument HARWI II at the synchrotron storage ring DORIS III at DESY is accepted very well by the community and is heavily overbooked in all fields (tomography, diffraction, etc.). After an 8-month shutdown period for an upgrade in the frame

  12. Investigation of 76Ge structure via inelastic scattering studies

    Science.gov (United States)

    Crider, B. P.; Mukhopadhyay, S.; Brown, B. A.; Ashley, S. F.; Chakraborty, A.; Kumar, A.; Peters, E. E.; McEllistrem, M. T.; Prados-Estévez, F. M.; Yates, S. W.

    2017-09-01

    The search for neutrinoless double- β decay (0 νββ) of 76Ge has led to renewed interest in the structure of this mass region, as structural information helps constrain calculations of the 0 νββ nuclear matrix elements. The structure of many of the even-even Ge isotopes, including 76Ge, show interesting features, such as low-lying 0+ states that have been interpreted as evidence for shape coexistence, as well as indications of triaxiality. Of fundamental importance in understanding the nature of the excited states in 76Ge is the determination of transition strengths, which has been obtained through 76Ge(n,n' γ) studies at the University of Kentucky and the 76Ge (γ ,γ') reaction at the High Intensity γ-Ray Source at Duke University. The measured transition strengths support the identification of band structure in 76Ge, a newly observed mixed-symmetry state, and the M1 scissors mode. This material is based upon work supported by the U.S. National Science Foundation under Grant No. PHY-1606890.

  13. Monolithically Integrated Ge-on-Si Active Photonics

    Directory of Open Access Journals (Sweden)

    Jifeng Liu

    2014-07-01

    Full Text Available Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well (QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors (PDs, electroabsorption modulators (EAMs, and laser diodes (LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform.

  14. van der Waals epitaxy of Ge films on mica

    Science.gov (United States)

    Littlejohn, A. J.; Xiang, Y.; Rauch, E.; Lu, T.-M.; Wang, G.-C.

    2017-11-01

    To date, many materials have been successfully grown on substrates through van der Waals epitaxy without adhering to the constraint of lattice matching as is required for traditional chemical epitaxy. However, for elemental semiconductors such as Ge, this has been challenging and therefore it has not been achieved thus far. In this paper, we report the observation of Ge epitaxially grown on mica at a narrow substrate temperature range around 425 °C. Despite the large lattice mismatch (23%) and the lack of high in-plane symmetry in the mica surface, an epitaxial Ge film with [111] out-of-plane orientation is observed. Crystallinity and electrical properties degrade upon deviation from the ideal growth temperature, as shown by Raman spectroscopy, X-ray diffraction, and Hall effect measurements. X-ray pole figure analysis reveals that there exist multiple rotational domains in the epitaxial Ge film with dominant in-plane orientations between Ge [" separators="|1 ¯10 ] and mica[100] of (20 n )°, where n = 0, 1, 2, 3, 4, 5. A superlattice area mismatch model was used to account for the likelihood of the in-plane orientation formation and was found to be qualitatively consistent with the observed dominant orientations. Our observation of Ge epitaxy with one out-of-plane growth direction through van der Waals forces is a step toward the growth of single crystal Ge films without the constraint in the lattice and symmetry matches with the substrates.

  15. Photoluminescence of phosphorus atomic layer doped Ge grown on Si

    Science.gov (United States)

    Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

    2017-10-01

    Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

  16. Prospects for identifying dark matter with CoGeNT

    Energy Technology Data Exchange (ETDEWEB)

    Kelso, Chris [Department of Physics, University of Chicago, 5720 S. Ellis Ave., Chicago, IL 60637 (United States); Hooper, Dan, E-mail: ckelso@uchicago.edu, E-mail: dhooper@fnal.gov [Fermilab Center for Particle Astrophysics — MS127, Fermi National Accelerator Laboratory, P.O. Box 500, Batavia, IL 60510 (United States)

    2011-02-01

    It has previously been shown that the excess of events reported by the CoGeNT collaboration could be generated by elastically scattering dark matter particles with a mass of approximately 5–15 GeV. This mass range is very similar to that required to generate the annual modulation observed by DAMA/LIBRA and the gamma rays from the region surrounding the Galactic Center identified within the data of the Fermi Gamma Ray Space Telescope. To confidently conclude that CoGeNT's excess is the result of dark matter, however, further data will likely be needed. In this paper, we make projections for the first full year of CoGeNT data, and for its planned upgrade. Not only will this body of data more accurately constrain the spectrum of nuclear recoil events, and corresponding dark matter parameter space, but will also make it possible to identify seasonal variations in the rate. In particular, if the CoGeNT excess is the product of dark matter, then one year of CoGeNT data will likely reveal an annual modulation with a significance of 2-3σ. The planned CoGeNT upgrade will not only detect such an annual modulation with high significance, but will be capable of measuring the energy spectrum of the modulation amplitude. These measurements will be essential to irrefutably confirming a dark matter origin of these events.

  17. Prospects For Identifying Dark Matter With CoGeNT

    Energy Technology Data Exchange (ETDEWEB)

    Kelso, Chris; Hooper, Dan

    2010-11-01

    It has previously been shown that the excess of events reported by the CoGeNT collaboration could be generated by elastically scattering dark matter particles with a mass of approximately 5-15 GeV. This mass range is very similar to that required to generate the annual modulation observed by DAMA/LIBRA and the gamma rays from the region surrounding the Galactic Center identified within the data of the Fermi Gamma Ray Space Telescope. To confidently conclude that CoGeNT's excess is the result of dark matter, however, further data will likely be needed. In this paper, we make projections for the first full year of CoGeNT data, and for its planned upgrade. Not only will this body of data more accurately constrain the spectrum of nuclear recoil events, and corresponding dark matter parameter space, but will also make it possible to identify seasonal variations in the rate. In particular, if the CoGeNT excess is the product of dark matter, then one year of CoGeNT data will likely reveal an annual modulation with a significance of 2-3{sigma}. The planned CoGeNT upgrade will not only detect such an annual modulation with high significance, but will be capable of measuring the energy spectrum of the modulation amplitude. These measurements will be essential to irrefutably confirming a dark matter origin of these events.

  18. Prospects for identifying dark matter with CoGeNT

    Science.gov (United States)

    Kelso, Chris; Hooper, Dan

    2011-02-01

    It has previously been shown that the excess of events reported by the CoGeNT collaboration could be generated by elastically scattering dark matter particles with a mass of approximately 5-15 GeV. This mass range is very similar to that required to generate the annual modulation observed by DAMA/LIBRA and the gamma rays from the region surrounding the Galactic Center identified within the data of the Fermi Gamma Ray Space Telescope. To confidently conclude that CoGeNT's excess is the result of dark matter, however, further data will likely be needed. In this paper, we make projections for the first full year of CoGeNT data, and for its planned upgrade. Not only will this body of data more accurately constrain the spectrum of nuclear recoil events, and corresponding dark matter parameter space, but will also make it possible to identify seasonal variations in the rate. In particular, if the CoGeNT excess is the product of dark matter, then one year of CoGeNT data will likely reveal an annual modulation with a significance of 2-3σ. The planned CoGeNT upgrade will not only detect such an annual modulation with high significance, but will be capable of measuring the energy spectrum of the modulation amplitude. These measurements will be essential to irrefutably confirming a dark matter origin of these events.

  19. The Majorana Ge-76 Double-Beta Decay Project

    CERN Document Server

    Aalseth, C E; Barabash, A S; Bowyer, T W; Brodzinski, R L; Brudanin, V B; Collar, J I; Doe, P J; Egorov, S; Elliott, S R; Farach, H A; Gaitskell, R J; Jordan, D; Kochetov, O I; Konovalov, S V; Kouzes, R T; Miley, H S; Pitts, W K; Reeves, J H; Robertson, R G H; Sandukovsky, V G; Smith, E; Stekhanov, V; Thompson, R C; Tornow, W; Umatov, V I; Warner, R A; Webb, J; Wilkerson, J F; Young, A

    2002-01-01

    The Majorana Experiment is a next-generation Ge-76 double-beta decay search. It will employ 500 kg of Ge, isotopically enriched to 86% in Ge-76, in the form of 200 detectors in a close-packed array for high granularity. Each crystal will be electronically segmented, with each region fitted with pulse-shape analysis electronics. A half-life sensitivity is predicted of 4.2e27 y or < 0.02-0.07 eV, depending on the nuclear matrix elements used to interpret the data.

  20. Spin-polarized photoemission from SiGe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2013-12-04

    We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

  1. Recent progress in GeSi electro-absorption modulators

    Directory of Open Access Journals (Sweden)

    Papichaya Chaisakul

    2014-01-01

    Full Text Available Electro-absorption from GeSi heterostructures is receiving growing attention as a high performance optical modulator for short distance optical interconnects. Ge incorporation with Si allows strong modulation mechanism using the Franz–Keldysh effect and the quantum-confined Stark effect from bulk and quantum well structures at telecommunication wavelengths. In this review, we discuss the current state of knowledge and the on-going challenges concerning the development of high performance GeSi electro-absorption modulators. We also provide feasible future prospects concerning this research topic.

  2. Ultrathin GaGeTe p-type transistors

    Science.gov (United States)

    Wang, Weike; Li, Liang; Zhang, Zhitao; Yang, Jiyong; Tang, Dongsheng; Zhai, Tianyou

    2017-11-01

    We exfoliated bulk GaGeTe crystals down to ultrathin flakes using the scotch tape method and fabricated field effect transistors (FETs). The GaGeTe FETs display a p-type behavior with drain current modulation on the order of 103, hole mobility of 0.45 cm2 V-1 s-1, and photoresponsivity of 3.6 A W-1 at room temperature. These findings suggest that the layered GaGeTe is a promising 2D semiconductor for fabricating devices, such as transistors and photodetectors.

  3. Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 Nanowires.

    Science.gov (United States)

    Park, Sungjin; Park, Dambi; Jeong, Kwangsik; Kim, Taeok; Park, SeungJong; Ahn, Min; Yang, Won Jun; Han, Jeong Hwa; Jeong, Hong Sik; Jeon, Seong Gi; Song, Jae Yong; Cho, Mann-Ho

    2015-10-07

    The thermal conduction characteristics of GeTe and Ge2Sb2Te5(GST) nanowires were investigated using an optical method to determine the local temperature by Raman spectroscopy. Since the localization of surface charge in a single-crystalline nanostructure can enhance charge-phonon scattering, the thermal conductivity value (κ) of single crystalline GeTe and GST nanowires was decreased significantly to 1.44 Wm(-1) K(-1) for GeTe and 1.13 Wm(-1) K(-1) for GST, compared to reported values for polycrystalline structures. The SET-to-RESET state in single-crystalline GeTe and GST nanowires are characteristic of a memory device. Unlike previous reports using GeTe and GST nanowires, the SET-to-RESET characteristics showed a bipolar switching shape and no unipolar switching. In addition, after multiple cycles of operation, a significant change in morphology and composition was observed without any structural phase transition, indicating that atoms migrate toward the cathode or anode, depending on their electronegativities. This change caused by a field effect indicates that the structural phase transition does not occur in the case of GeTe and GST nanowires with a significantly lowered thermal conductivity and stable crystalline structure. Finally, the formation of voids and hillocks as the result of the electromigration critically degrades device reliability.

  4. Retraction: Mohamaden W, Wang H, Guan H, Li J. Effect of potassium oxalate on liver function and kidney tissue of dogs (beagles. Arch biol sci. 2013;65(4:1363-70. DOI: 10.2298/ABS1304363M

    Directory of Open Access Journals (Sweden)

    Editorial

    2015-01-01

    Full Text Available This is a notice of retraction of the article: Effect of potassium oxalate on liver function and kidney tissue of dogs (beagles, published in the Archives of Biological Sciences in 2013, Vol. 65, Issue 4. The Editor-in-Chief has been informed that this paper is a duplicate of an earlier paper: Mohamaden W, Wang H, Guan H, Meng X, Li J. Effect of potassium oxalate injection on serum and kidney tissue of beagle dogs. Life Sci J. 2013;10(2:1537-42. This claim is correct and the results have already been presented in the article published earlier. After confirmation of this fact, the Editor-in-Chief of the Archives of Biological Sciences has decided to retract the paper immediately. We apologize for this error. Link to the retracted article 10.2298/ABS1304363M

  5. Retraction: "Activated K-Ras and INK4a/Arf Deficiency Promote Aggressiveness of Pancreatic Cancer by Induction of EMT Consistent With Cancer Stem Cell Phenotype" by Wang et al.

    Science.gov (United States)

    2016-10-01

    The above article, published online on November 23, 2012 in Wiley Online Library (wileyonlinelibrary.com), has been retracted by agreement between the journal Editor in Chief, Gary S. Stein, and Wiley Periodicals, Inc. The retraction has been agreed following an investigation from Wayne State University involving the first author and the corresponding author that found Figure 4B and C to be inappropriately manipulated and re-labeled. Literature Cited Wang Z, Ali S, Banerjee S, Bao B, Li Y, Azmi AS, Korc M, Sarkar FH. 2013. Activated K-Ras and INK4a/Arf deficiency promote aggressiveness of pancreatic cancer by induction of EMT consistent with cancer stem cell phenotype. J Cell Physiol 228:556-562; doi: 10.1002/jcp.24162. © 2016 Wiley Periodicals, Inc.

  6. Retraction: "Identification of Novel Biomarkers for Pancreatic Cancer Using Integrated Transcriptomics With Functional Pathways Analysis" by Zhang, X., Tong, P., Chen, J., Pei, Z., Zhang, X., Chen, W., Xu, J. and Wang, J.

    Science.gov (United States)

    2017-11-01

    The above article from the Journal of Cellular Physiology, published online on 10 March 2016 in Wiley Online Library as Early View (http://onlinelibrary.wiley.com/enhanced/doi/10.1002/jcp.25353/), has been retracted by agreement between Gary Stein, the journal's Editor-in-Chief, and Wiley Periodicals, Inc. The retraction has been agreed following an investigation at the University of Texas, MD Anderson Cancer Center, which confirmed that the article was submitted and approved for publication by Dr. Jin Wang without acknowledgement of NIH funding received or the consent and authorship of Dr. Ann Killary and Dr. Subrata Sen, with whom the manuscript was originally drafted. © 2016 Wiley Periodicals, Inc.

  7. Retraction: "Down-regulation of Notch-1 and Jagged-1 inhibits prostate cancer cell growth, migration and invasion, and induces apoptosis via inactivation of Akt, mTOR, and NF-κB signaling pathways" by Wang et al.

    Science.gov (United States)

    2016-08-01

    The above article, published online on January 5, 2010 in Wiley Online Library (wileyonlinelibrary.com), has been retracted by agreement between the journal Editor in Chief, Gary S. Stein, and Wiley Periodicals, Inc. The retraction has been agreed following an investigation from Wayne State University involving the first author and the corresponding author that found Figure 5A to be inappropriately manipulated. REFERENCE Wang Z, Li Y, Banerjee S, Kong D, Ahmad A, Nogueira V, Hay N, Sarkar FH. 2010. Down-regulation of Notch-1 and Jagged-1 inhibits prostate cancer cell growth, migration and invasion, and induces apoptosis via inactivation of Akt, mTOR, and NF-κB signaling pathways. J Cell Biochem 109:726-736; doi: 10.1002/jcb.22451. © 2016 Wiley Periodicals, Inc.

  8. Retraction: "Down-regulation of Notch-1 is associated with Akt and FoxM1 in inducing cell growth inhibition and apoptosis in prostate cancer cells" by Wang et al.

    Science.gov (United States)

    2016-08-01

    The above article, published online on July 23, 2010 in Wiley Online Library (wileyonlinelibrary.com), has been retracted by agreement between the journal Editor in Chief, Gary S. Stein, and Wiley Periodicals, Inc. The retraction has been agreed following an investigation from Wayne State University involving the first author and the corresponding author that found Figures 1B and 3A to be inappropriately manipulated. REFERENCE Wang Z, Li Y, Ahmad A, Banerjee S, Azmi AS, Kong D, Wojewoda C, Miele L, Sarkar FH. 2011. Down-regulation of Notch-1 is associated with Akt and FoxM1 in inducing cell growth inhibition and apoptosis in prostate cancer cells. J Cell Biochem 112:78-88; doi: 10.1002/jcb.22770. © 2016 Wiley Periodicals, Inc.

  9. Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(0 0 1) heterostructures

    Science.gov (United States)

    Bolkhovityanov, Yu. B.; Deryabin, A. S.; Gutakovskii, A. K.; Sokolov, L. V.

    2018-02-01

    Edge dislocations in face-centered crystals are formed from two mixed dislocations gliding along intersecting {1 -1 1} planes, forming the so-called Lomer locks. This process, which is called zipping, is energetically beneficial. It is experimentally demonstrated in this paper that a reverse process may occur in Ge/GeSi strained buffer/Si(0 0 1) heterostructures under certain conditions, namely, decoupling of two 60° dislocations that formed the Lomer-type dislocation, i.e., unzipping. It is assumed that the driving force responsible for separation of Lomer dislocations into two 60° dislocations is the strain remaining in the GeSi buffer layer.

  10. Croissance et âge des poissons capitaines: Polydactylus quadrifilis ...

    African Journals Online (AJOL)

    Croissance et âge des poissons capitaines: Polydactylus quadrifilis (Cuvier, 1829), Galeoides decadactylus (Bloch, 1795) et Pentanemus quinquarius (Linné, 1758) de la pêcherie artisanale maritime de Grand-Lahou (Côte d'Ivoire)

  11. GE NANOCLUSTERS IN PLANAR GLASS WAVEGUIDES DEPOSITED BY PECVD

    DEFF Research Database (Denmark)

    Haiyan, Ou; Olsen, Johnny H.; Rottwitt, Karsten

    2004-01-01

    methods for waveguide components. For the first time to our best knowledge, this paper reports the formation of Ge nanoclusters in glass thin films deposited by using PECVD. Ge nanoclusters in glass have been demonstrated to have great potential for application to the nonlinear waveguide components....... In this work we study the size and distribution of the nanoclusters by transmission electron microscopy (TEM) and Raman spectroscopy. The formation of the clusters is investigated by varying the Ge concentration in the glass and changing the annealing conditions such as temperature, atmosphere and time....... The combined effect of a strong nonlinear glass material and a material platform that is well known from standard planar lightwave components makes this Ge nanoclusters material very promising for optical nonlinear waveguide components that are readily fabricated by using the same processing as standard...

  12. Atomistic simulation of damage accumulation and amorphization in Ge

    Energy Technology Data Exchange (ETDEWEB)

    Gomez-Selles, Jose L., E-mail: joseluis.gomezselles@imdea.org; Martin-Bragado, Ignacio [IMDEA Materials Institute, Eric Kandel 2, 28906 Getafe, Madrid (Spain); Claverie, Alain [CEMES/CNRS, 29 rue J. Marvig, 31055 Toulouse Cedex (France); Sklenard, Benoit [CEA, LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Benistant, Francis [GLOBALFOUNDRIES Singapore Pte Ltd., 60 Woodlands Industrial Park D Street 2, Singapore 738406 (Singapore)

    2015-02-07

    Damage accumulation and amorphization mechanisms by means of ion implantation in Ge are studied using Kinetic Monte Carlo and Binary Collision Approximation techniques. Such mechanisms are investigated through different stages of damage accumulation taking place in the implantation process: from point defect generation and cluster formation up to full amorphization of Ge layers. We propose a damage concentration amorphization threshold for Ge of ∼1.3 × 10{sup 22} cm{sup −3} which is independent on the implantation conditions. Recombination energy barriers depending on amorphous pocket sizes are provided. This leads to an explanation of the reported distinct behavior of the damage generated by different ions. We have also observed that the dissolution of clusters plays an important role for relatively high temperatures and fluences. The model is able to explain and predict different damage generation regimes, amount of generated damage, and extension of amorphous layers in Ge for different ions and implantation conditions.

  13. Geïntegreerde bestrijding in roos onder glas

    NARCIS (Netherlands)

    Pijnakker, J.; Ramakers, P.M.J.; Linden, van der A.; Kok, L.W.; Groot, de E.B.; Holstein, van R.; Garcia Victoria, N.

    2008-01-01

    Bladmonsters werden verzameld op rozenbedrijven om vast te stellen welke natuurlijke vijanden op deze waardplant voorkomen. Deze inventarisatie werd uitgevoerd op veertig bedrijven, die al dan niet roofmijten hadden geïntroduceerd. In spinthaarden werden Phytoseiulus persimilis, Amblyseius

  14. Hall Mobility of Amorphous Ge2Sb2Te5

    National Research Council Canada - National Science Library

    Baily, S. A; Emin, David; Li, Heng

    2006-01-01

    The electrical conductivity, Seebeck coefficient, and Hall coefficient of 3 micron thick films of amorphous Ge2Sb2Te5 have been measured as functions of temperature from room temperature down to as low as 200 K...

  15. Aerial view of the 28 GeV Protron Synchrotron

    CERN Multimedia

    CERN PhotoLab

    1965-01-01

    The underground ring of the 28 GeV proton synchrotron in 1965. Left, the South and North experimental halls. Top right, part of the East hall. Bottom right, the main generator room and the cooling condensers.

  16. High Temperature Stable Nanocrystalline SiGe Thermoelectric Material

    Science.gov (United States)

    Yang, Sherwin (Inventor); Matejczyk, Daniel Edward (Inventor); Determan, William (Inventor)

    2013-01-01

    A method of forming a nanocomposite thermoelectric material having microstructural stability at temperatures greater than 1000 C. The method includes creating nanocrystalline powder by cryomilling. The method is particularly useful in forming SiGe alloy powder.

  17. Halbwachs no Collège de France

    OpenAIRE

    Laurent Mucchielli; Jacqueline Pluet-Despatin

    2001-01-01

    Este artigo apresenta documento escrito por Maurice Halbwachs, em seus cadernos de memória. Seu principal tema é a eleição de Halbwachs para o Collège de France.This article presents the document writen by Maurice Halbwachs, in his memory-books. Its main subject is the Halbwachs election for the Collège de France.

  18. Halbwachs no Collège de France

    Directory of Open Access Journals (Sweden)

    Laurent Mucchielli

    2001-01-01

    Full Text Available Este artigo apresenta documento escrito por Maurice Halbwachs, em seus cadernos de memória. Seu principal tema é a eleição de Halbwachs para o Collège de France.This article presents the document writen by Maurice Halbwachs, in his memory-books. Its main subject is the Halbwachs election for the Collège de France.

  19. Growth and electronic structure of graphene on semiconducting Ge(110)

    OpenAIRE

    Tesch, Julia; Voloshina, Elena; Fonin, Mikhail; Dedkov, Yuriy S.

    2017-01-01

    The direct growth of graphene on semiconducting or insulating substrates might help to overcome main drawbacks of metal-based synthesis, like metal-atom contaminations of graphene, transfer issues, etc. Here we present the growth of graphene on n-doped semiconducting Ge(110) by using an atomic carbon source and the study of the structural and electronic properties of the obtained interface. We found that graphene interacts weakly with the underlying Ge(110) substrate that keeps graphene's ele...

  20. Electron density distribution in Si and Ge using multipole, maximum ...

    Indian Academy of Sciences (India)

    Q[S(Q) − 1] sin(Qr)dQ. (17). G(r) will be in units of Е−2 if Q is in Е−1 [16]. In the present work, the powder X-ray data of Si and Ge have been utilized for the analysis of pair distribution function. The observed PDF's have been obtained from the software package PDFGetX [29]. The PDF for Si and Ge were refined.

  1. Tandlæge Lene Skak-Iversen

    DEFF Research Database (Denmark)

    Kjær, Inger

    2013-01-01

    Det var med stor sorg, at vi modtog meddelelsen om, at Lene Skak-Iversen var død efter kort tids sygdom, 66 år gammel. Dermed sluttede et fagligt enestående livsforløb, delt i tre forskellige perioder. Lene Skak-Iversen blev tandlæge i 1971. Hun fungerede i en årrække dels som børnetandlæge i Køb...

  2. Reversible oxidation state change in germanium(tetraphenylporphyrin) induced by a dative ligand: aromatic GeII(TPP) and antiaromatic GeIV(TPP)(pyridine)2.

    Science.gov (United States)

    Cissell, Julie A; Vaid, Thomas P; Yap, Glenn P A

    2007-06-27

    Treatment of GeCl2(dioxane) with Li2(TPP)(OEt2)2 (TPP = tetraphenylporphyrin) in THF yields Ge(TPP), the first free Ge(II) porphyrin complex. In pyridine Ge(TPP) is converted to Ge(TPP)(py)2, an antiaromatic Ge(IV) complex, whereas in benzene the reaction is reversed, and pyridine dissociates from Ge(TPP)(py)2 to form Ge(TPP). That reversible reaction represents an unusual, if not unique, example of an oxidation-state change in a metal induced by coordination of a dative ligand. UV-vis and 1H NMR spectroscopy show that Ge(TPP) is an aromatic Ge(II) porphyrin complex, while the 1H NMR spectrum of Ge(TPP)(py)2 clearly indicates the presence of a strong paratropic ring current, characteristic of an antiaromatic compound. Both Ge(TPP) and Ge(TPP)(py)2 have been crystallographically characterized, and the antiaromaticity of Ge(TPP)(py)2 leads to alternating short and long C-C bonds along the 20-carbon periphery of its porphine ring system. Coordination of pyridine to Ge(TPP) greatly increases its reducing ability: the Ge(TPP)0/2+ redox potential is about +0.2 V, while the Ge(TPP)(py)2(0/+) redox potential is -1.24 V (both vs. ferrocene). The equilibrium constant of the reaction Ge(TPP) + 2 py = Ge(TPP)(py)2 in C6D6 is 22 M-2. The germanium complex of the more electron-withdrawing tetrakis[3,5-bis(trifluoromethyl)phenyl]porphyrin, Ge(TArFP), and its pyridine adduct Ge(TArFP)(py)2 were synthesized. The equilibrium constant of the reaction Ge(TArFP) + 2 py = Ge(TArFP)(py)2 in C6F6/C6D6 is 2.3 x 10(4) M-2. Density functional theory calculations are consistent with the experimental observation that M(TPP)(py)2 formation from M(TPP) and pyridine is most favorable for M=Si, borderline for Ge, and unfavorable for Sn.

  3. The JLab TMD Program at 6 GeV and 11 GeV

    Energy Technology Data Exchange (ETDEWEB)

    Puckett, Andrew J. [Univ. of Connecticut, Storrs, CT (United States)

    2016-05-01

    The precise mapping of the nucleon’s transverse momentum dependent parton distributions (TMDs) in the valence quark region has emerged as one of the flagship physics programs of the recently upgraded Continuous Electron Beam Accelerator Facility (CEBAF) at Jefferson Lab (JLab). The TMDs describe the three-dimensional, spin-correlated densities of quarks and gluons in the nucleon in momentum space, and are accessible experimentally through detailed studies of the Semi-Inclusive Deep Inelastic Scattering (SIDIS) process, N ( e ; e 0 h ) X . The already unrivaled intensity, polarization and duty factor performance of CEBAF will combine with the dramatic expansion of its kinematic reach embodied by the recent near-doubling of the maximum beam energy to enable the first fully differential precision measurements of SIDIS structure functions in the valence region. In this paper, I will review the existing and forthcoming SIDIS results from the 6 GeV era of CEBAF operations and present an overview of the planned JLab SIDIS program at 11 GeV beam energy

  4. EPIC-CoGe: Managing and Analyzing Genomic Data.

    Science.gov (United States)

    Nelson, Andrew D L; Haug-Baltzell, Asher K; Davey, Sean; Gregory, Brian D; Lyons, Eric

    2018-02-20

    The EPIC-CoGe browser is a web-based genome visualization utility that integrates the GMOD JBrowse genome browser with the extensive CoGe genome database (currently containing over 30,000 genomes). In addition, the EPIC-CoGe browser boasts many additional features over basic JBrowse, including enhanced search capability and on-the-fly analyses for comparisons and analyses between all types of functional and diversity genomics data. There is no installation required and data (genome, annotation, functional genomic, and diversity data) can be loaded by following a simple point and click wizard, or using a REST API, making the browser widely accessible and easy to use by researchers of all computational skill levels. In addition, EPIC-CoGe and data tracks are easily embedded in other websites and JBrowse instances. EPIC-CoGe Browser is freely available for use online through CoGe (https://genomevolution.org). Source code (MIT open source) is available: https://github.com/LyonsLab/coge. ericlyons@email.arizona.edu. Supplementary data are available at Bioinformatics online.

  5. LArGe. A liquid argon scintillation veto for GERDA

    Energy Technology Data Exchange (ETDEWEB)

    Heisel, Mark

    2011-04-13

    LArGe is a GERDA low-background test facility to study novel background suppression methods in a low-background environment, for possible applications in the GERDA experiment. GERDA searches for the neutrinoless double-beta decay in {sup 76}Ge, by operating naked germanium detectors submersed into 65 m{sup 3} of liquid argon. Similarly, LArGe runs Ge-detectors in 1 m{sup 3} (1.4 tons) of liquid argon, which in addition is instrumented with photomultipliers to detect argon scintillation light. The light is used in anti-coincidence with the germanium detectors, to effectively suppress background events that deposit energy in the liquid argon. This work adresses the design, construction, and commissioning of LArGe. The background suppression efficiency has been studied in combination with a pulse shape discrimination (PSD) technique for various sources, which represent characteristic backgrounds to GERDA. Suppression factors of a few times 10{sup 3} have been achieved. First background data of LArGe (without PSD) yield a background index of (0.12-4.6).10{sup -2} cts/(keV.kg.y) (90% c.l.), which is at the level of the Gerda phase I design goal. Furthermore, for the first time we measure the natural {sup 42}Ar abundance (in parallel to Gerda), and have indication for the 2{nu}{beta}{beta}-decay in natural germanium. (orig.)

  6. Ferro electrical properties of GeSbTe thin films; Propiedades ferroelectricas de peliculas delgadas de GeSbTe

    Energy Technology Data Exchange (ETDEWEB)

    Gervacio A, J. J.; Prokhorov, E.; Espinoza B, F. J., E-mail: jgervacio@qro.cinvestav.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Juriquilla, 76230 Queretaro (Mexico)

    2011-07-01

    The aim of this work is to investigate and compare ferro electrical properties of thin GeSbTe films with composition Ge{sub 4}Sb{sub 1}Te{sub 5} (with well defined ferro electrical properties) and Ge{sub 2}Sb{sub 2}Te{sub 5} using impedance, optical reflection, XRD, DSc and Piezo response Force Microscopy techniques. The temperature dependence of the capacitance in both materials shows an abrupt change at the temperature corresponding to ferroelectric-paraelectric transition and the Curie-Weiss dependence. In Ge{sub 2}Sb{sub 2}Te{sub 5} films this transition corresponds to the end from a NaCl-type to a hexagonal transformation. Piezo response Force Microscopy measurements found ferroelectric domains with dimension approximately equal to the dimension of grains. (Author)

  7. Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

    KAUST Repository

    Dong, Y.

    2014-07-26

    Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.

  8. Kesterite Cu2Zn(Sn,Ge)(S,Se)4 thin film with controlled Ge-doping for photovoltaic application

    Science.gov (United States)

    Zhao, Wangen; Pan, Daocheng; Liu, Shengzhong (Frank)

    2016-05-01

    Cu2ZnSn(S,Se)4 (CZTSSe) semiconductors have been a focus of extensive research effort owing to low-toxicity, high abundance and low material cost. Yet, the CZTSSe thin film solar cell has a low open-circuit voltage value that presents challenges. Herein, using GeSe2 as a new Ge source material, we have achieved a wider band gap CZTSSe-based semiconductor absorber layer with its band-gap controlled by adjusting the ratio of SnS2 : GeSe2 used. In addition, the Cu2Zn(Sn,Ge)(S,Se)4 thin films were prepared with optimal Ge doping (30%) and solar cells were fabricated to attain a respectable power conversion efficiency of 4.8% under 1.5 AM with an active area of 0.19 cm2 without an anti-reflection layer.Cu2ZnSn(S,Se)4 (CZTSSe) semiconductors have been a focus of extensive research effort owing to low-toxicity, high abundance and low material cost. Yet, the CZTSSe thin film solar cell has a low open-circuit voltage value that presents challenges. Herein, using GeSe2 as a new Ge source material, we have achieved a wider band gap CZTSSe-based semiconductor absorber layer with its band-gap controlled by adjusting the ratio of SnS2 : GeSe2 used. In addition, the Cu2Zn(Sn,Ge)(S,Se)4 thin films were prepared with optimal Ge doping (30%) and solar cells were fabricated to attain a respectable power conversion efficiency of 4.8% under 1.5 AM with an active area of 0.19 cm2 without an anti-reflection layer. Electronic supplementary information (ESI) available: The XRD patterns, chemical component analysis, top-view and cross-sectional images, and XPS of CZTGSSe thin films with different Ge content are exhibited. See DOI: 10.1039/c6nr00959j

  9. Measurement of Trilinear Gauge Couplings in $e^+ e^-$ Collisions at 161 GeV and 172 GeV

    CERN Document Server

    Abreu, P; Adye, T; Adzic, P; Alekseev, G D; Alemany, R; Allport, P P; Almehed, S; Amaldi, Ugo; Amato, S; Andersson, P; Andreazza, A; Antilogus, P; Apel, W D; Arnoud, Y; Åsman, B; Augustin, J E; Augustinus, A; Baillon, Paul; Bambade, P; Barão, F; Barbier, R; Bardin, Dimitri Yuri; Barker, G; Baroncelli, A; Bärring, O; Bates, M J; Battaglia, Marco; Baubillier, M; Becks, K H; Begalli, M; Beillière, P; Belokopytov, Yu A; Benvenuti, Alberto C; Bérat, C; Berggren, M; Bertini, D; Bertrand, D; Besançon, M; Bianchi, F; Bigi, M; Bilenky, S M; Billoir, P; Bizouard, M A; Bloch, D; Bonesini, M; Bonivento, W; Boonekamp, M; Booth, P S L; Borgland, A W; Borisov, G; Bosio, C; Botner, O; Boudinov, E; Bouquet, B; Bourdarios, C; Bowcock, T J V; Bozovic, I; Bozzo, M; Branchini, P; Brand, K D; Brenke, T; Brenner, R A; Brown, R; Brückman, P; Brunet, J M; Bugge, L; Buran, T; Burgsmüller, T; Buschmann, P; Cabrera, S; Caccia, M; Calvi, M; Camacho-Rozas, A J; Camporesi, T; Canale, V; Canepa, M; Carena, F; Carroll, L; Caso, Carlo; Castillo-Gimenez, M V; Cattai, A; Cavallo, F R; Cerruti, C; Chabaud, V; Chapkin, M M; Charpentier, P; Chaussard, L; Checchia, P; Chelkov, G A; Chen, M; Chierici, R; Chliapnikov, P V; Chochula, P; Chorowicz, V; Chudoba, J; Collins, P; Colomer, M; Contri, R; Cortina, E; Cosme, G; Cossutti, F; Cowell, J H; Crawley, H B; Crennell, D J; Crosetti, G; Cuevas-Maestro, J; Czellar, S; D'Almagne, B; Damgaard, G; Dauncey, P D; Davenport, Martyn; Da Silva, W; Deghorain, A; Della Ricca, G; Delpierre, P A; Demaria, N; De Angelis, A; de Boer, Wim; De Brabandere, S; De Clercq, C; La Vaissière, C de; De Lotto, B; De Min, A; De Paula, L S; Dijkstra, H; Di Ciaccio, Lucia; Di Diodato, A; Djannati, A; Dolbeau, J; Doroba, K; Dracos, M; Drees, J; Drees, K A; Dris, M; Duperrin, A; Durand, J D; Edsall, D M; Ehret, R; Eigen, G; Ekelöf, T J C; Ekspong, Gösta; Ellert, M; Elsing, M; Engel, J P; Erzen, B; Espirito-Santo, M C; Falk, E; Fanourakis, G K; Fassouliotis, D; Fayot, J; Feindt, Michael; Ferrari, P; Ferrer, A; Fichet, S; Firestone, A; Fischer, P A; Flagmeyer, U; Föth, H; Fokitis, E; Fontanelli, F; Formenti, F; Franek, B J; Frodesen, A G; Frühwirth, R; Fulda-Quenzer, F; Fuster, J A; Galloni, A; Gamba, D; Gandelman, M; García, C; García, J; Gaspar, C; Gaspar, M; Gasparini, U; Gavillet, P; Gazis, E N; Gelé, D; Gerber, J P; Gerdyukov, L N; Ghodbane, N; Glege, F; Gokieli, R; Golob, B; Gonçalves, P; González-Caballero, I; Gopal, Gian P; Gorn, L; Górski, M; Guz, Yu; Gracco, Valerio; Grahl, J; Graziani, E; Green, C; Grefrath, A; Gris, P; Grosdidier, G; Grzelak, K; Günther, M; Guy, J; Hahn, F; Hahn, S; Haider, S; Hajduk, Z; Hallgren, A; Hamacher, K; Harris, F J; Hedberg, V; Heising, S; Henriques, R P; Hernández, J J; Herquet, P; Herr, H; Hessing, T L; Heuser, J M; Higón, E; Holmgren, S O; Holt, P J; Holthuizen, D J; Hoorelbeke, S; Houlden, M A; Hrubec, Josef; Huet, K; Hultqvist, K; Jackson, J N; Jacobsson, R; Jalocha, P; Janik, R; Jarlskog, C; Jarlskog, G; Jarry, P; Jean-Marie, B; Johansson, E K; Jönsson, L B; Jönsson, P E; Joram, Christian; Juillot, P; Kapusta, F; Karafasoulis, K; Katsanevas, S; Katsoufis, E C; Keränen, R; Khomenko, B A; Khovanskii, N N; King, B J; Kjaer, N J; Klapp, O; Klein, H; Kluit, P M; Knoblauch, D; Kokkinias, P; Koratzinos, M; Korcyl, K; Kostyukhin, V; Kourkoumelis, C; Kuznetsov, O; Krammer, Manfred; Kreuter, C; Kronkvist, I J; Krumshtein, Z; Kubinec, P; Kucewicz, W; Kurvinen, K L; Lacasta, C; Lamsa, J; Lanceri, L; Lane, D W; Langefeld, P; Lapin, V; Laugier, J P; Lauhakangas, R; Leder, Gerhard; Ledroit, F; Lefébure, V; Legan, C K; Leisos, A; Leitner, R; Lemonne, J; Lenzen, Georg; Lepeltier, V; Lesiak, T; Lethuillier, M; Libby, J; Liko, D; Lipniacka, A; Lippi, I; Lörstad, B; Loken, J G; Lopes, J H; López, J M; Loukas, D; Lutz, P; Lyons, L; MacNaughton, J N; Mahon, J R; Maio, A; Malek, A; Malmgren, T G M; Malychev, V; Mandl, F; Marco, J; Marco, R P; Maréchal, B; Margoni, M; Marin, J C; Mariotti, C; Markou, A; Martínez-Rivero, C; Martínez-Vidal, F; Martí i García, S; Matorras, F; Matteuzzi, C; Matthiae, Giorgio; Mazzucato, F; Mazzucato, M; McCubbin, M L; McKay, R; McNulty, R; McPherson, G; Medbo, J; Meroni, C; Meyer, W T; Michelotto, M; Migliore, E; Mirabito, L; Mitaroff, Winfried A; Mjörnmark, U; Moa, T; Møller, R; Mönig, K; Monge, M R; Moreau, X; Morettini, P; Münich, K; Mulders, M; Mundim, L M; Murray, W J; Muryn, B; Myatt, Gerald; Myklebust, T; Naraghi, F; Navarria, Francesco Luigi; Navas, S; Nawrocki, K; Negri, P; Némécek, S; Neufeld, N; Neumann, W; Neumeister, N; Nicolaidou, R; Nielsen, B S; Nieuwenhuizen, M; Nikolaenko, V; Nikolenko, M; Niss, P; Nomerotski, A; Normand, Ainsley; Nygren, A; Oberschulte-Beckmann, W; Obraztsov, V F; Olshevskii, A G; Onofre, A; Orava, Risto; Orazi, G; Österberg, K; Ouraou, A; Paganini, P; Paganoni, M; Paiano, S; Pain, R; Paiva, R; Palka, H; Papadopoulou, T D; Papageorgiou, K; Pape, L; Parkes, C; Parodi, F; Parzefall, U; Passeri, A; Pegoraro, M; Pernegger, H; Pernicka, Manfred; Perrotta, A; Petridou, C; Petrolini, A; Phillips, H T; Piana, G; Pierre, F; Pimenta, M; Piotto, E; Podobnik, T; Podobrin, O; Pol, M E; Polok, G; Poropat, P; Pozdnyakov, V; Privitera, P; Pukhaeva, N; Pullia, Antonio; Radojicic, D; Ragazzi, S; Rahmani, H; Rames, J; Ratoff, P N; Read, A L; Rebecchi, P; Redaelli, N G; Regler, Meinhard; Reid, D; Reinhardt, R; Renton, P B; Resvanis, L K; Richard, F; Rídky, J; Rinaudo, G; Røhne, O M; Romero, A; Ronchese, P; Rosenberg, E I; Rosinsky, P; Roudeau, Patrick; Rovelli, T; Ruhlmann-Kleider, V; Ruiz, A; Saarikko, H; Sacquin, Yu; Sadovskii, A; Sajot, G; Salt, J; Sampsonidis, D; Sannino, M; Schneider, H; Schwickerath, U; Schyns, M A E; Scuri, F; Seager, P; Sedykh, Yu; Segar, A M; Sekulin, R L; Senko, V A; Shellard, R C; Sheridan, A; Silvestre, R; Simonetto, F; Sissakian, A N; Skaali, T B; Smadja, G; Smirnov, N; Smirnova, O G; Smith, G R; Solovyanov, O; Sopczak, André; Sosnowski, R; Souza-Santos, D; Spassoff, Tz; Spiriti, E; Sponholz, P; Squarcia, S; Stampfer, D; Stanescu, C; Stanic, S; Stapnes, Steinar; Stavitski, I; Stevenson, K; Stocchi, A; Strauss, J; Strub, R; Stugu, B; Szczekowski, M; Szeptycka, M; Tabarelli de Fatis, T; Chikilev, O G; Tegenfeldt, F; Terranova, F; Thomas, J; Tilquin, A; Timmermans, J; Tkatchev, L G; Todorov, T; Todorova, S; Toet, D Z; Tomaradze, A G; Tomé, B; Tonazzo, A; Tortora, L; Tranströmer, G; Treille, D; Tristram, G; Trombini, A; Troncon, C; Tsirou, A L; Turluer, M L; Tyapkin, I A; Tyndel, M; Tzamarias, S; Überschär, B; Ullaland, O; Uvarov, V; Valenti, G; Vallazza, E; van Apeldoorn, G W; van Dam, P; Van Doninck, W K; Van Eldik, J; Van Lysebetten, A; Van Vulpen, I B; Vassilopoulos, N; Vegni, G; Ventura, L; Venus, W A; Verbeure, F; Verlato, M; Vertogradov, L S; Verzi, V; Vilanova, D; Vincent, P; Vishnevski, N K; Vitale, L; Vlasov, E; Vodopyanov, A S; Vrba, V; Wahlen, H; Walck, C; Weiser, C; Wetherell, Alan M; Wicke, D; Wickens, J H; Wilkinson, G R; Williams, W S C; Winter, M; Witek, M; Wlodek, T; Wolf, G; Yi, J; Yushchenko, O P; Zalewska-Bak, A; Zalewski, Piotr; Zavrtanik, D; Zevgolatakos, E; Zimin, N I; Zucchelli, G C; Zumerle, G

    1998-01-01

    Trilinear gauge boson couplings are measured using data taken by DELPHI at 161~GeV and 172~GeV. Values for $WWV$ couplings ($V=Z, \\gamma$) are determined from a study of the reactions \\eeWW\\ and \\eeWev, using differential distributions from the $WW$ final state in which one $W$ decays hadronically and the other leptonically, and total cross-section4AU LWit

  10. NORARISTEROMYCIN Henry Yu and Tesfaye Serbessa* Elizabeth ...

    African Journals Online (AJOL)

    Preferred Customer

    The unsaturated counterpart, 3, has a slightly lower activity with a reduced cytotoxicity. To investigate the effect of changes in lipophilicity of 2 and 3 on their activity toward HBV, several. N-6 substituted derivatives (4-11) were designed and synthesized (Figure 2). N. N. N. N. NH2. OH. R. HO. 1R=OH. 2R=H. N. N. N. N. NH2.

  11. Chuangzaoli xinlixue yu jiechu rencai peiyang

    DEFF Research Database (Denmark)

    Shi, Jiannong; Chen, N.; Du, Xiangyun

    2012-01-01

    The authors emphasize the importance of systemic perspectives for understanding human creativity after briefly introducing and commenting different theories or perspectives on creativity. It is emphasized that the manifestation of creativity or excellent achievement should not be treated as indiv......The authors emphasize the importance of systemic perspectives for understanding human creativity after briefly introducing and commenting different theories or perspectives on creativity. It is emphasized that the manifestation of creativity or excellent achievement should not be treated......, roles of family and social environment on development of creativity and cultivation of excellent talent....

  12. Laule : [luuletused] / Li Yu ; tlk. Jaan Kaplinski

    Index Scriptorium Estoniae

    Yu, Li

    2002-01-01

    Sisu : "Vahused lained kui kuhjaksid kokku lund..."; "Õhtuks mingitud näo ja ihu valendus..."; "Kirkad lilled, hämus kuu, udu hõljuv loor..."; "Pool kevadet lahkumisest..."; "Sõnatult astun läänekambrisse..."; "metsapuilt on pudenenud kevadevärvid..."; "Vihmasabin kardina taga..."; "Möödunut võib ainult leinata..."; "Öö oli rajune-vihmane...";"Kevadlilled, sügisekuu - kaua veel..."

  13. NORARISTEROMYCIN Henry Yu and Tesfaye Serbessa* Elizabeth ...

    African Journals Online (AJOL)

    Preferred Customer

    Scheme 3. Synthesis of targets 8-11. Antiviral analysis. To investigate their biological potential, 4-11 were subjected to antiviral screening versus hepatitis B virus (HBV), Epstein-Barr virus (EBV), Human Cytomegalovirus (HCMV),. Varicella-Zoster virus (VZV), Hepatitis C virus (HCV), West Nile virus, Yellow Fever virus,.

  14. Magnetic Field Strength Evaluation Yu. S. Yefimov

    Indian Academy of Sciences (India)

    A great number of articles are devoted to the study of mag- netic field in cosmic objects. Important contributions to the study of magnetic fields .... However, the flare activity (especially periodical) presents some difficulties in this model. To eliminate these problems, Camenzind & Krockenberger (1992) suggested.

  15. Ge nanoclusters in PECVD-deposited glass caused only by heat treatment

    DEFF Research Database (Denmark)

    Ou, Haiyan; Rørdam, Troels Peter; Rottwitt, Karsten

    2008-01-01

    by transmission electron microscopy (TEM) and Raman spectroscopy. As-deposited and annealed samples were analyzed by secondary ion mass spectroscopy (SIMS). TEM investigation shows that Ge nanoclusters were formed in the as-deposited SiGe layer and the SiGe layer was transformed into a silicon dioxide layer...... embedded with Ge nanoclusters after annealing. These nanoclusters are crystalline and varied in size. There were no clusters in the Ge-doped glass layer. Raman spectra verified the existence of crystalline Ge clusters. The positional shift of the Ge vibrational peak with the change of the focus depth...... in complicated waveguide components....

  16. Sr11Ge4N6: a new nitride composed of [GeN2Sr7]4+ antiperovskite-type slabs and [Sr4Ge]4+ layers, separated by sheets of bent [Ge(II)N2]4- ions.

    Science.gov (United States)

    Gál, Zoltán A; Clarke, Simon J

    2005-02-14

    The layered nitride Sr11Ge4N6 contains Ge4- Zintl anions in both [Sr4Ge]4+ layers and [GeN2Sr7]4+ antiperovskite-type slabs which are separated by sheets of bent [Ge(II)N2]4- ions; the observed range of formal germanium oxidation states in nitrides thus extends between +4 and -4.

  17. Review of SiGe HBTs on SOI

    Science.gov (United States)

    Mitrovic, I. Z.; Buiu, O.; Hall, S.; Bagnall, D. M.; Ashburn, P.

    2005-09-01

    This paper reviews progress in SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI) technology. SiGe HBTs on SOI are attractive for mixed signal radio frequency (RF) applications and have been of increasing research interest due to their compatibility with SOI CMOS (Complementary Metal Oxide Semiconductor) technology. In bipolar technology, the use of SOI substrate eliminates parasitic substrate transistors and associated latch-up, and has the ability to reduce crosstalk, particularly when combined with buried groundplanes (GP). Various technological SOI bipolar concepts are reviewed with special emphasis on the state-of-the-art SOI SiGe HBT devices in vertical and lateral design. More in depth results are shown from a UK consortium advanced RF platform technology, which includes SOI SiGe HBTs. Bonded wafer technology was developed to allow incorporation of buried silicide layers both above and below the buried oxide. New electrical and noise characterisation results pointed to reduced 1/ f noise in these devices compared to bulk counterparts. The lower noise is purported to arise from strain relief of the device structure due to the elasticity of the buried oxide layer during the high temperature epitaxial layer growth. The novel concept of the silicide SOI (SSOI) SiGe HBT technology developed for targeting a reduction in collector resistance, as well as for suppressing the crosstalk, is outlined. The buried tungsten silicide layers were found to have negligible impact on junction leakage. Further to vertical SiGe HBTs on SOI, the challenges of fabricating a lateral SOI SiGe HBT structure are presented.

  18. Molecules for materials: structures, thermochemistry, and electron affinities of the digermanium fluorides Ge2Fn/Ge2Fn- (n = 1-6): a wealth of unusual structures.

    Science.gov (United States)

    Li, Qianshu; Li, Guoliang; Xu, Wenguo; Xie, Yaoming; Schaefer, Henry F

    2002-02-15

    A systematic investigation of Ge2Fn/Ge2Fn- systems was carried out with five density functional theory (DFT) methods in conjunction with DZP++ basis sets. For each compound various structures, including minima, transition states and other energetically low lying stationary points, were optimized. The geometries and relative energies are discussed and compared. Adiabatic electron affinities, vertical electron affinities and anion vertical detachment energies are reported. Three types of dissociation energies pertaining to the global minima for each compound are reported. The theoretical predictions are in good agreement with the limited available experimental results. Many unusual structural features are predicted for these systems. Neutral Ge2F is predicted to have a bridged C2v structure, while its anion is very floppy, with the bridged structure very slightly favoured. The Ge2F2 molecule is predicted to have the butterfly structure known from experiment for Si2H2, while the Ge2F3- ion has a trans-bent structure. Ge2F3 is predicted to have an unprecedented FGe-F-GeF structure with no Ge-Ge bond, while its anion has a somewhat more conventional monobridged structure, analogous to that of the nonclassical vinyl cation. Neutral Ge2F4 has a dibridged structure of C2h symmetry, while its anion has a trans-bent structure with a very long Ge-Ge bond. The Ge2F5 molecule is doubly bridged and has no Ge-Ge bond, while the anion is of the type F2Ge-F-GeF2, again with no Ge-Ge bond. Ge2F6 has the anticipated ethane structure, as does its anion, but with a very long Ge-Ge bond. The adiabatic electron affinities (EAad) are predicted to be 2.12 (Ge2F), 2.03 (Ge2F2), 2.02 (Ge2F3), 1.64 (Ge2F4), 4.57 (Ge2F5), and 2.66 eV (Ge2F6), respectively, by the BHLYP method, which is regarded as the best method in the present paper for predicting EAs. Comparisons with the analogous C2Fn and Si2Fn systems reveals some interesting trends and differences. For example, while C2F6 will not

  19. QUANTUM HALL-EFFECT IN MULTILAYER P-GE/GE1-XSIX HETEROSTRUCTURES AND ENERGY-SPECTRUM OF THE 2D HOLE GAS IN A MAGNETIC-FIELD

    NARCIS (Netherlands)

    ARAPOV, YG; GORODILOV, NA; NEVEROV, VN; YAKUNIN, MV; GERMANENKO, AV; MINKOV, GM; KUZNETSOV, OA; RUBTSOVA, RA; CHERNOV, AL; ORLOV, LK

    1994-01-01

    The quantum Hall effect and the structure of magnetoresistance oscillations observed in multilayer p-Ge/Ge1-xSix heterostructure systems are analyzed on the basis of a picture of magnetic levels of the Ge valence band calculated from the model of an infinitely deep square quantum well. The odd

  20. Journal of Genetics | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Home; Journals; Journal of Genetics. YANG LUO. Articles written in Journal of Genetics. Volume 90 Issue 2 August 2011 pp 339-342 Research Note. Novel vitamin D 1-hydroxylase gene mutations in a Chinese vitamin-D-dependent rickets type I patient · Lihua Cao Fang Liu Yu Wang Jian Ma Shusen Wang Libo Wang ...

  1. Novel vitamin D 1α-hydroxylase gene mutations in a Chinese ...

    Indian Academy of Sciences (India)

    hydroxylase gene mutations in a Chinese vitamin-D-dependent rickets type I patient. Lihua Cao Fang Liu Yu Wang Jian Ma Shusen Wang Libo Wang Yang Zhang Chen Chen Yang Luo Hongwei Ma. Research Note Volume 90 Issue 2 August ...

  2. Novel vitamin D 1α-hydroxylase gene mutations in a Chinese ...

    Indian Academy of Sciences (India)

    2011-08-19

    hydroxylase gene mutations in a Chinese vitamin-D-dependent rickets type I patient. LIHUA CAO1, FANG LIU2, YU WANG1, JIAN MA2, SHUSEN WANG1, LIBO WANG2, YANG ZHANG1,. CHEN CHEN1, YANG LUO1∗ and HONGWEI ...

  3. Journal of Genetics | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Home; Journals; Journal of Genetics. JIAN MA. Articles written in Journal of Genetics. Volume 90 Issue 2 August 2011 pp 339-342 Research Note. Novel vitamin D 1-hydroxylase gene mutations in a Chinese vitamin-D-dependent rickets type I patient · Lihua Cao Fang Liu Yu Wang Jian Ma Shusen Wang Libo Wang Yang ...

  4. Journal of Genetics | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Home; Journals; Journal of Genetics. SHUSEN WANG. Articles written in Journal of Genetics. Volume 90 Issue 2 August 2011 pp 339-342 Research Note. Novel vitamin D 1-hydroxylase gene mutations in a Chinese vitamin-D-dependent rickets type I patient · Lihua Cao Fang Liu Yu Wang Jian Ma Shusen Wang Libo ...

  5. PanGeT: Pan-genomics tool.

    Science.gov (United States)

    Yuvaraj, Iyyappan; Sridhar, Jayavel; Michael, Daliah; Sekar, Kanagaraj

    2017-02-05

    A decade after the concept of Pan-genome was first introduced; research in this field has spread its tentacles to areas such as pathogenesis of diseases, bacterial evolutionary studies and drug resistance. Gene content-based differentiation of virulent and a virulent strains of bacteria and identification of pathogen specific genes is imperative to understand their physiology and gain insights into the mechanism of genome evolution. Subsequently, this will aid in identifying diagnostic targets and in developing and selecting vaccines. The root of pan-genomic studies, however, is to identify the core genes, dispensable genes and strain specific genes across the genomes belonging to a clade. To this end, we have developed a tool, "PanGeT - Pan-genomics Tool" to compute the 'pan-genome' based on comparisons at the genome as well as the proteome levels. This automated tool is implemented using LaTeX libraries for effective visualization of overall pan-genome through graphical plots. Links to retrieve sequence information and functional annotations have also been provided. PanGeT can be downloaded from http://pranag.physics.iisc.ernet.in/PanGeT/ or https://github.com/PanGeTv1/PanGeT. Copyright © 2016 Elsevier B.V. All rights reserved.

  6. Poly-SiGe for MEMS-above-CMOS sensors

    CERN Document Server

    Gonzalez Ruiz, Pilar; Witvrouw, Ann

    2014-01-01

    Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

  7. Shen-Qi-Jie-Yu-Fang has antidepressant effects in a rodent model of postpartum depression by regulating the immune organs and subsets of T lymphocytes

    Directory of Open Access Journals (Sweden)

    Qu M

    2015-06-01

    Full Text Available Miao Qu,1 Qisheng Tang,1 Xiaoli Li,1 Ruizhen Zhao,1 Jingya Li,1 Hong Xu,2 Yushan Gao,2 Yingqiu Mao31Third Affiliated Hospital, 2School of Basic Medical Sciences, 3Center of Scientific Research, Beijing University of Chinese Medicine, Beijing, People’s Republic of China Background: Shen-Qi-Jie-Yu-Fang (SJ Fang is a herbal preparation used in traditional Chinese medicine, and is a potentially important new therapeutic agent in postpartum depression (PPD. Previously, we have elucidated the effects of SJ Fang on hormone receptors and monoamine neurotransmitters involved in the hypothalamic-pituitary-adrenal and hypothalamic-pituitary-gonadal axes in PPD rats. However, the immune-modulating effects of SJ Fang in PPD are still unknown. In this study, we explored the effects of SJ Fang on the immune organs and subsets of T lymphocytes in PPD rats.Methods: PPD was created in Sprague-Dawley rats by inducing hormone-simulated pregnancy followed by hormone withdrawal. After hormone withdrawal, the PPD rats were then treated with fluoxetine at 1, 2, and 4 weeks, and the SJ Fang rats were also treated at 1, 2, and 4 weeks. Depressive behavior in the rats was evaluated by the forced swim test, sucrose consumption test, and open field test. The thymus index and spleen index were calculated. Hematoxylin-eosin staining was used to identify pathological features in the thymus and spleen. CD3, CD4, and CD8 lymphocyte subsets were analyzed by flow cytometry.Results: Both fluoxetine and SJ Fang increased immobility time, sucrose consumption, an horizontal and vertical movements. After 4 weeks of treatment with fluoxetine or SJ Fang, the thymus index and spleen index were significantly higher than at baseline, and the morphology of the thymus and spleen were returning to normal. Two weeks after hormone withdrawal, subsets of T lymphocytes indicated a shift from immune activation to immune suppression, which was reversed by 4 weeks of treatment with fluoxetine or SJ

  8. Effect of Yi-nao-jie-yu decoction on γ-aminobutyric acid type A receptor in the hippocampus and serum inflammatory factors in a rat model of poststroke anxiety

    Directory of Open Access Journals (Sweden)

    Zhang W

    2016-11-01

    Full Text Available Wen Zhang,1 Ruizhen Zhao,1 Xiaoli Li,1 Xia Cui,1 Zijun Zhao,1 Yingqiu Mao,2 Fengzhi Wu,3 Qisheng Tang1 1Department of Encephalopathy, The Third Affiliated Hospital, 2Center of Scientific Research, 3Center of Journals, Beijing University of Chinese Medicine, Chaoyang District, Beijing, People’s Republic of China Background: The Yi-nao-jie-yu decoction (YNJYD is a herbal preparation widely used in the clinics of traditional Chinese medicine and has been recently used as an important new therapeutic agent in poststroke anxiety (PSA. The neuroendocrine–immune system plays an important role in PSA mechanisms, although the modulating effects of YNJYD remain unknown. This study investigated the potential effects of YNJYD on the neuroendocrine–immune system in a rat model of PSA.Materials and methods: The PSA model was induced by injecting collagenase (type VII into the right globus pallidus, accompanied by empty water bottle stimulation for 2 weeks. The sham group and the PSA model group were gavaged with saline, while the treatment groups received buspirone (BuSpar or YNJYD. Behavior was evaluated with the open field test and elevated plus maze once a week. Pathological changes were observed by hematoxylin and eosin staining. Serum levels of tumor necrosis factor, interleukin (IL-6, adrenocorticotropic hormone, thyroid stimulating hormone, free triiodothyronine, free thyroxine, IL-1α, and cortisol were detected by radioimmunoassay. Expression of the γ-aminobutyric acid type A receptor (GABAAR α2 subunit was examined by Western blot and real-time polymerase chain reaction.Results: YNJYD-treated rats exhibited significantly better recovery than BuSpar-treated rats at 21 days and 28 days in the open field test and elevated plus maze. Hematoxylin and eosin staining revealed neural repair in the hippocampus in the treatment groups. Serum levels of IL-1α in the YNJYD group were significantly less than those in the model group and the Bu

  9. Effect of XingPiJieYu decoction on spatial learning and memory and cAMP-PKA-CREB-BDNF pathway in rat model of depression through chronic unpredictable stress.

    Science.gov (United States)

    Wang, Chunye; Guo, Jianyou; Guo, Rongjuan

    2017-01-24

    Depression is a mental disorder characterized by a pervasive low mood and loss of pleasure or interest in usual activities, and often results in cognitive dysfunction. The disturbance of cognitive processes associated with depression, especially the impairment of learning and memory, exacerbates illness and increases recurrence of depression. XingPiJieYu (XPJY) is one of the most widely clinical formulas of traditional Chinese medicine (TCM) and can improve the symptoms of depression, including learning and memory. However, its regulatory effects haven't been comprehensively studied so far. Recently, some animal tests have indicated that the cyclic adenosine monophosphate (cAMP)-protein kinase A (PKA)-cAMP response element-binding protein (CREB)-brain derived neurotrophic factor (BDNF) signaling pathway in hippocampus is closely related to depression and the pathogenesis of cognitive function impairments. The present study was performed to investigate the effect and mechanism of XPJY on depression and learning and memory in animal model. The rat model of depression was established by chronic unpredictable stress (CUS) for 21 days. The rats were randomly divided into six groups: control group, CUS group, CUS + XPJY (1.4 g/kg, 0.7 g/kg and 0.35 g/kg) groups, and CUS + sertraline (10 mg/kg) group. The sucrose preference, open field exploration and Morris water maze (MWM) were tested. The expression of cAMP, CREB, PKA and BDNF protein in hippocampus was examined with Elisa and Western Blot. The mRNA level of CREB and BDNF in hippocampus was measured with PCR. The results demonstrated that rats subjected to CUS exhibited decreases in sucrose preference, total ambulation, percentage of central ambulation, rearing in the open field test and spatial performance in the MWM. CUS reduced the expression of cAMP, PKA, CREB and BDNF in hippocampus of model rats. These effects could be reversed by XPJY. The results indicated that XPJY can improve depression and

  10. The Jefferson Lab 12 GeV Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    R.D. McKeown

    2010-09-01

    Construction of the 12 GeV upgrade to the Continuous Electron Beam Accelerator Facility (CEBAF) at the Thomas Jefferson National Accelerator Facility is presently underway. This upgrade includes doubling the energy of the electron beam to 12 GeV, the addition of a new fourth experimental hall, and the construction of upgraded detector hardware. An overview of this upgrade project is presented, along with highlights of the anticipated experimental program. The 12 GeV upgrade project at Jefferson Lab will enable a powerful new experimental program that will advance our understanding of the quark/gluon structure of hadronic matter, the nature of Quantum Chromodynamics, and the properties of a new extended standard model of particle interactions. Commissioning of the upgraded beam will be begin in 2013, and the full complement of upgraded experimental equipment will be completed in 2015. This unique facility will provide many opportunities for exploration and discovery for a large international community of nuclear scientists.

  11. Novel heterostructured Ge nanowires based on polytype transformation.

    Science.gov (United States)

    Vincent, Laetitia; Patriarche, Gilles; Hallais, Géraldine; Renard, Charles; Gardès, Cyrille; Troadec, David; Bouchier, Daniel

    2014-08-13

    We report on a strain-induced phase transformation in Ge nanowires under external shear stresses. The resulted polytype heterostructure may have great potential for photonics and thermoelectric applications. ⟨111⟩-oriented Ge nanowires with standard diamond structure (3C) undergo a phase transformation toward the hexagonal diamond phase referred as the 2H-allotrope. The phase transformation occurs heterogeneously on shear bands along the length of the nanowire. The structure meets the common phenomenological criteria of a martensitic phase transformation. This point is discussed to initiate an on going debate on the transformation mechanisms. The process results in unprecedented quasiperiodic heterostructures 3C/2H along the Ge nanowire. The thermal stability of those 2H domains is also studied under annealing up to 650 °C by in situ TEM.

  12. GaAs/Ge/Si epitaxial substrates: Development and characteristics

    Directory of Open Access Journals (Sweden)

    Yury Buzynin

    2017-01-01

    Full Text Available We developed high quality 2-inch GaAs/Ge/Si (100 epitaxial substrates, which may be used instead of GaAs monolithic substrates for fabrication of solar cells, photodetectors, LEDs, lasers, etc. A 200–300 nm Ge buffer layer was grown on Si substrates using the HW-CVD technique at 300°C, a tantalum strip heated to 1400°C was used as the “hotwire”. The MOCVD method was used to grow a 1 μ GaAs layer on a Ge buffer. The TDD in the GaAs layers did not exceed (1–2∙105 cm-2 and the surface RMS roughness value was under 1 nm.

  13. Characterising the 750 GeV diphoton excess

    Energy Technology Data Exchange (ETDEWEB)

    Bernon, Jérémy [Laboratoire de Physique Subatomique et de Cosmologie, Université Grenoble-Alpes, CNRS/IN2P3,53 Avenue des Martyrs, Grenoble, F-38026 (France); Goudelis, Andreas [Institute of High Energy Physics, Austrian Academy of Sciences,Nikolsdorfergasse 18, Vienna, 1050 (Austria); Kraml, Sabine [Laboratoire de Physique Subatomique et de Cosmologie, Université Grenoble-Alpes, CNRS/IN2P3,53 Avenue des Martyrs, Grenoble, F-38026 (France); Mawatari, Kentarou [Laboratoire de Physique Subatomique et de Cosmologie, Université Grenoble-Alpes, CNRS/IN2P3,53 Avenue des Martyrs, Grenoble, F-38026 (France); Theoretische Natuurkunde and IIHE/ELEM, Vrije Universiteit Brussel, and International Solvay Institutes, Pleinlaan 2, Brussels, B-1050 (Belgium); Sengupta, Dipan [Laboratoire de Physique Subatomique et de Cosmologie, Université Grenoble-Alpes, CNRS/IN2P3,53 Avenue des Martyrs, Grenoble, F-38026 (France)

    2016-05-23

    We study kinematic distributions that may help characterise the recently observed excess in diphoton events at 750 GeV at the LHC Run 2. Several scenarios are considered, including spin-0 and spin-2 750 GeV resonances that decay directly into photon pairs as well as heavier parent resonances that undergo three-body or cascade decays. We find that combinations of the distributions of the diphoton system and the leading photon can distinguish the topology and mass spectra of the different scenarios, while patterns of QCD radiation can help differentiate the production mechanisms. Moreover, missing energy is a powerful discriminator for the heavy parent scenarios if they involve (effectively) invisible particles. While our study concentrates on the current excess at 750 GeV, the analysis is general and can also be useful for characterising other potential diphoton signals in the future.

  14. Scalar mesons above and below 1 GeV

    Energy Technology Data Exchange (ETDEWEB)

    Close, Frank E. [Department of Theoretical Physics, University of Oxford, Oxford (United Kingdom)]. E-mail: F.Close@physics.ox.ac.uk; Toernqvist, Nils A. [Department of Physical Sciences, University of Helsinki, Helsinki (Finland)]. E-mail: nils.tornqvist@helsinki.fi

    2002-10-01

    We show that two nonets and a glueball provide a consistent description of data on scalar mesons below 1.7 GeV. Above 1 GeV the states form a conventional qq-bar nonet mixed with the glueball of lattice QCD. Below 1 GeV the states also form a nonet, as implied by the attractive forces of QCD, but of a more complicated nature. Near the centre they are (qq)3-bar(q-barq-bar){sub 3} in S-wave, with some qq-bar in P-wave, but further out they rearrange as (qq-bar){sub 1}(qq-bar){sub 1} and finally as meson-meson states. A simple effective chiral model for such a system with two scalar nonets can be made involving two coupled linear sigma models. One of these could be looked upon as the Higgs sector of nonpertubative QCD. (author)

  15. Reducing 68Ge Background in Dark Matter Experiments

    Energy Technology Data Exchange (ETDEWEB)

    Kouzes, Richard T.; Orrell, John L.

    2011-03-01

    Experimental searches for dark matter include experiments with sub-0.5 keV-energy threshold high purity germanium detectors. Experimental efforts, in partnership with the CoGeNT Collaboration operating at the Soudan Underground Laboratory, are focusing on energy threshold reduction via noise abatement, reduction of backgrounds from cosmic ray generated isotopes, and ubiquitous environmental radioactive sources. The most significant cosmic ray produced radionuclide is 68Ge. This paper evaluates reducing this background by freshly mining and processing germanium ore. The most probable outcome is a reduction of the background by a factor of two, and at most a factor of four. A very cost effective alternative is to obtain processed Ge as soon as possible and store it underground for 18 months.

  16. The 6 GeV TMD Program at Jefferson Lab

    Directory of Open Access Journals (Sweden)

    Puckett Andrew

    2015-01-01

    Full Text Available The study of the transverse momentum dependent parton distributions (TMDs of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF. The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  17. CEBAF SRF Performance during Initial 12 GeV Commissioning

    Energy Technology Data Exchange (ETDEWEB)

    Bachimanchi, Ramakrishna; Allison, Trent; Daly, Edward; Drury, Michael; Hovater, J; Lahti, George; Mounts, Clyde; Nelson, Richard; Plawski, Tomasz

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) energy upgrade from 6 GeV to 12 GeV includes the installation of eleven new 100 MV cryomodules (88 cavities). The superconducting RF cavities are designed to operate CW at an accelerating gradient of 19.3 MV/m with a QL of 3×107. Not all the cavities were operated at the minimum gradient of 19.3 MV/m with the beam. Though the initial 12 GeV milestones were achieved during the initial commissioning of CEBAF, there are still some issues to be addressed for long term reliable operation of these modules. This paper reports the operational experiences during the initial commissioning and the path forward to improve the performance of C100 (100 MV) modules.

  18. The 6 GeV TMD Program at Jefferson Lab

    Energy Technology Data Exchange (ETDEWEB)

    Puckett, Andrew J. [Univ. of Connecticut, Storrs, CT (United States); Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  19. Strong emission of terahertz radiation from nanostructured Ge surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Chul; Maeng, Inhee; Kee, Chul-Sik, E-mail: cskee@gist.ac.kr [Integrated Optics Laboratory, Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Leem, Jung Woo; Yu, Jae Su, E-mail: jsyu@khu.ac.kr [Department of Electronics and Radio Engineering, and Institute for Wareable Convergence Electronics, Kyung Hee University, Gyeonggi-do 446-701 (Korea, Republic of); Kim, Tae Heon; Lee, Jong Seok [Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

    2015-06-29

    Indirect band gap semiconductors are not efficient emitters of terahertz radiation. Here, we report strong emission of terahertz radiation from germanium wafers with nanostructured surfaces. The amplitude of THz radiation from an array of nano-bullets (nano-cones) is more than five (three) times larger than that from a bare-Ge wafer. The power of the terahertz radiation from a Ge wafer with an array of nano-bullets is comparable to that from n-GaAs wafers, which have been widely used as a terahertz source. We find that the THz radiation from Ge wafers with the nano-bullets is even more powerful than that from n-GaAs for frequencies below 0.6 THz. Our results suggest that introducing properly designed nanostructures on indirect band gap semiconductor wafers is a simple and cheap method to improve the terahertz emission efficiency of the wafers significantly.

  20. Formation of Ge self-assembled quantum dots on a Si {sub x}Ge{sub 1-x} buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyungjun [Department of Electrical Engineering, University of California Los Angeles, Los Angeles, CA 90095-1595 (United States); Shin, Chansun [Nuclear Materials Technology Development, Korea Atomic Energy Research Institute, Daejeon 305-353 (Korea, Republic of); Chang, Joonyeon [Nano Device Research Center, Korea Institute of Science and Technology, P.O. Box 131, Chongryang, Seoul 136-791 (Korea, Republic of)]. E-mail: presto@kist.re.kr

    2005-12-15

    Ge self-assembled quantum dots (SAQDs) grown on a relaxed Si{sub 0.75}Ge{sub 0.25} buffer layer were observed using an atomic force microscopy (AFM) and a transmission electron microscopy (TEM). The effect of buried misfit dislocations on the formation and the distribution of Ge SAQDs was extensively investigated. The Burgers vector determination of each buried dislocation using the g.b = 0 invisibility criterion with plane-view TEM micrographs shows that Ge SAQDs grow at specific positions related to the Burgers vectors of buried dislocations. The measurement of the lateral distance between a SAQD and the corresponding misfit dislocation with plane-view and cross-sectional TEM images reveals that SAQDs form at the intersections of the top surface with the slip planes of misfit dislocations. The stress field on the top surface due to misfit dislocations is computed, and it is found that the strain energy of the misfit dislocations provides the preferential formation sites for Ge SAQDs nucleation.

  1. Effect of strained Ge-based NMOSFETs with Ge0.93Si0.07 stressors on device layout

    Science.gov (United States)

    Hsu, Hung-Wen; Lee, Chang-Chun

    2017-12-01

    This research proposes a germanium (Ge)-based n-channel MOSFET with Ge0.93Si0.07 S/D stressor. A simulation technique is utilized to understand the layout effect of shallow trench isolation (STI) length, gate width, dummy active of diffusion (OD) length, and extended poly width on stress distribution in a channel region. Stress distribution in a channel region was simulated by ANSYS software based on finite element analysis. Furthermore, carrier mobility gain was evaluated by a second-order piezoresistance model. The piezoresistance coefficient of Ge nMOSFET varies from that of Si nMOSFET. The piezoresistance coefficient shows that longitudinal and transverse stresses are the dominant factors affecting the change in electron mobility in the channel region. For Ge-based nMOSFET, longitudinal stress tends to be tensile, whereas transverse stress tends to be compressive. Stress along channel length becomes more tensile when STI length decreases. By contrast, stress along the channel width becomes more compressive when gate width or extended poly width decreases. Electron mobility in Ge-based nMOSFET could be enhanced under the aforementioned conditions. The enhanced electron mobility becomes more significant as the device combines with a contact etching stop layer stressor. Moreover, the mobility can be improved by changing the STI length, gate width, dummy OD length, or extended poly width. This investigation systematically analyzed the relationship between layout factor and stress distribution.

  2. Kinetics of plasma oxidation of germanium-tin (GeSn)

    Science.gov (United States)

    Wang, Wei; Lei, Dian; Dong, Yuan; Zhang, Zheng; Pan, Jisheng; Gong, Xiao; Tok, Eng-Soon; Yeo, Yee-Chia

    2017-12-01

    The kinetics of plasma oxidation of GeSn at low temperature is investigated. The oxidation process is described by a power-law model where the oxidation rate decreases rapidly from the initial oxidation rate with increasing time. The oxidation rate of GeSn is higher than that of pure Ge, which can be explained by the higher chemical reaction rate at the GeSn-oxide/GeSn interface. In addition, the Sn atoms at the interface region exchange positions with the underlying Ge atoms during oxidation, leading to a SnO2-rich oxide near the interface. The bandgap of GeSn oxide is extracted to be 5.1 ± 0.2 eV by XPS, and the valence band offset at the GeSn-oxide/GeSn heterojunction is found to be 3.7 ± 0.2 eV. Controlled annealing experiments demonstrate that the GeSn oxide is stable with respect to annealing temperatures up to 400 °C. However, after annealing at 450 °C, the GeO2 is converted to GeO, and desorbs from the GeSn-oxide/GeSn, leaving behind Sn oxide.

  3. Ion Beam Synthesis of Ge Nanowires. rev. ed.

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, T.

    2001-01-01

    The formation of Ge nanowires in V-grooves has been studied experimentally as well as theoretically. As substrate oxide covered Si V-grooves were used formed by anisotropic etching of (001)Si wafers and subsequent oxidation of their surface. Implantation of 1 x 10{sup 17} Ge{sup +}cm{sup -2} at 70 keV was carried out into the oxide layer covering the V-grooves. Ion irradiation induces shape changes of the V-grooves, which are captured in a novel continuum model of surface evolution. It describes theoretically the effects of sputtering, redeposition of sputtered atoms, and swelling. Thereby, the time evolution of the target surface is determined by a nonlinear integro-differential equation, which was solved numerically for the V-groove geometry. A very good agreement is achieved for the predicted surface shape and the shape observed in XTEM images. Surprisingly, the model predicts material (Si, O, Ge) transport into the V-groove bottom which also suggests an Ge accumulation there proven by STEM-EDX investigations. In this Ge rich bottom region, subsequent annealing in N{sub 2} atmosphere results in the formation of a nanowire by coalescence of Ge precipitates shown by XTEM images. The process of phase separation during the nanowire growth was studied by means of kinetic 3D lattice Monte-Carlo simulations. These simulations also indicate the disintegration of continuous wires into droplets mediated by thermal fluctuations. Energy considerations have identified a fragmentation threshold and a lower boundary for the droplet radii which were confirmed by the Monte Carlo simulation. The here given results indicate the possibility of achieving nanowires being several nanometers wide by further growth optimizations as well as chains of equally spaced clusters with nearly uniform diameter. (orig.)

  4. GaAs/Ge solar panels for the SAMPEX program

    Science.gov (United States)

    Dobson, Rodney; Kukulka, Jerry; Dakermanji, George; Roufberg, Lew; Ahmad, Anisa; Lyons, John

    1992-01-01

    GaAs based solar cells have been developed for spacecraft use for several years. However, acceptance and application of these cells for spacecraft missions has been slow because of their high cost and concerns about their integration onto solar panels. Spectrolab has now completed fabrication of solar panels with GaAs/Ge solar cells for a second space program. This paper will focus on the design, fabrication and test of GaAs/Ge solar panels for the Solar Anomalous and Magnetospheric Particle Explorer (SAMPEX) Program.

  5. Multifragmentation with GeV light-ion beams

    CERN Document Server

    Kwiatkowski, K; Wang, G; Lefort, T; Bracken, D S; Cornell, E; Foxford, E R; Ginger, D S; Viola, V E; Yoder, N R; Korteling, R G; Pollacco, E C; Legrain, R; Volant, C; Gimeno-Nogues, F; Laforest, R; Martin, E; Ramakrishnan, E; Rowland, D; Ruangma, A; Winchester, E M; Yennello, S J; Lynch, W G; Tsang, M B; Xi, H; Breuer, H; Morley, K B; Gushue, S; Remsberg, L P; Pienkowski, L; Brzychczyk, J; Botvina, A; Friedman, W A

    1999-01-01

    Multifragmentation studies with GeV light-ion beams indicate that for the most violent collisions, complex fragments are emitted during expansion of the hot source, followed by near simultaneous breakup of the system near rho/rho sub o approx ((1)/(3)). The results are compared with hybrid INC/EES and INC/SMM models. Preliminary data for the 8 GeV/c pi sup - and p-bar reactions on sup 1 sup 9 sup 7 Au show enhanced deposition energy for the antiproton beam.

  6. Lattice position and thermal stability of diluted As in Ge

    CERN Document Server

    Decoster, S; Cottenier, S; Correia, JG; Mendonça, T; Amorim, LM; Pereira, LMC; Vantomme, A

    2012-01-01

    We present a lattice location study of the n-type dopant arsenic after ion implantation into germanium. By means of electron emission channeling experiments, we have observed that the implanted As atoms substitute the Ge host atoms. However, in contrast to several implanted metal impurities in Ge, no significant fraction of As is found on interstitial sites. The substitutional As impurities are found to be thermally stable up to 600°C. After 700°C annealing a strong reduction of emission channeling effects was observed, in full accordance with the expected diffusion-induced broadening of the As profile.

  7. Magnetoelastic behaviour of Gd sub 5 Ge sub 4

    CERN Document Server

    Magen, C; Algarabel, P A; Marquina, C; Ibarra, M R

    2003-01-01

    A complete investigation of the complex magnetic behaviour of Gd sub 5 Ge sub 4 by means of linear thermal expansion and magnetostriction measurements (5-300 K, 0-120 kOe) has been carried out. Our results support the suggested existence in this system of a coupled crystallographic-magnetic transition from a Gd sub 5 Ge sub 4 -type Pnma (antiferromagnetic) to a Gd sub 5 Si sub 4 -type Pnma (ferromagnetic) state. Strong magnetoelastic effects are observed at the field-induced first-order magnetic-martensitic transformation. A revised magnetic and crystallographic H- T phase diagram is proposed.

  8. Poly-SiGe-based MEMS Xylophone Bar Magnetometer

    OpenAIRE

    Rochus, Véronique; Jansen, R.; Tilmans, H. A. C.; Rottenberg, X.; Chen, C.; Ranvier, S.; Lamy, Hervé; Rochus, Pierre

    2012-01-01

    This paper presents the design, fabrication and preliminary characterization of highly sensitive MEMS-based Xylophone Bar Magnetometers (XBMs) realized in imec’s poly-SiGe MEMS technology. Key for our Lorentz force driven capacitively sensed resonant sensor are the combination of reasonably high Q-factor and conductivity of imec’s poly-SiGe, our optimized multiphysics sensor design targeting the maximization of the Q-factor in a wide temperature range as well as our proprietary monolithic abo...

  9. First measurement of 60Ge β-decay

    Science.gov (United States)

    Ciemny, A. A.; Dominik, W.; Ginter, T.; Grzywacz, R.; Janas, Z.; Kuich, M.; Mazzocchi, C.; Miernik, K.; Pfützner, M.; Pomorski, M.; Bazin, D.; Baumann, T.; Bezbakh, A.; Crider, B. P.; Ćwiok, M.; Go, S.; Kamiński, G.; Kolos, K.; Korgul, A.; Kwan, E.; Liddick, S. N.; Paulauskas, S. V.; Pereira, J.; Rykaczewski, K. P.; Sumithrarachchi, C.; Xiao, Y.

    2016-04-01

    The N=28 isotone 60Ge , Tz=-2, was produced and selected among the products of the fragmentation reaction of a 78Kr beam at 150 MeV/nucleon and a Be target by means of the A1900 fragment separator at the National Superconducting Cyclotron Laboratory (NSCL) at Michigan State University (MSU). Its decay was studied for the first time using the optical time projection chamber. The β-decay of 60Ge was found to be dominated by β-delayed proton emission, with a branching of ≈ 100% and half-life T_{1/2}=20_{-5}^{+7} ms.

  10. Strained Si/SiGe MOS transistor model

    Directory of Open Access Journals (Sweden)

    Tatjana Pešić-Brđanin

    2009-06-01

    Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

  11. Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: structure and optical properties

    Science.gov (United States)

    Volodin, V. A.; Cherkov, A. G.; Antonenko, A. Kh; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2017-07-01

    Ge(x)[SiO2](1-x) (0.1  ⩽  x  ⩽  0.4) films were deposited onto Si(0 0 1) or fused quartz substrates using co-evaporation of both Ge and SiO2 in high vacuum. Germanium nanocrystals were synthesized in the SiO2 matrix by furnace annealing of Ge x [SiO2](1-x) films with x  ⩾  0.2. According to electron microscopy and Raman spectroscopy data, the average size of the nanocrystals depends weakly on the annealing temperature (700, 800, or 900 °C) and on the Ge concentration in the films. Neither amorphous Ge clusters nor Ge nanocrystals were observed in as-deposited and annealed Ge0.1[SiO2]0.9 films. Infrared absorption spectroscopy measurements show that the studied films do not contain a noticeable amount of GeO x clusters. After annealing at 900 °C intermixing of germanium and silicon atoms was still negligible thus preventing the formation of GeSi nanocrystals. For annealed samples, we report the observation of infrared photoluminescence at low temperatures, which can be explained by exciton recombination in Ge nanocrystals. Moreover, we report strong photoluminescence in the visible range at room temperature, which is certainly due to Ge-related defect-induced radiative transitions.

  12. Anomalous temperature dependence of photoluminescence in GeO x films and GeO x /SiO2 nano-heterostructures

    Science.gov (United States)

    Marin, D. V.; Volodin, V. A.; Rinnert, H.; Vergnat, M.

    2012-06-01

    The optical properties of GeO x film and GeO x /SiO2 multilayer heterostructures (with thickness of GeO x layers down to 1 nm) were studied with the use of Raman scattering and infrared spectroscopy, ellipsometry and photoluminescence spectroscopy including temperature dependence of photoluminescence. The observed photoluminescence is related to defect (dangling bonds) in GeO x and interface defects for the case of GeO x /SiO2 multilayer heterostructures. From analysis of temperature dependence of photoluminescence intensity, it was found that rate of nonradiative transitions in GeO x film has Berthelot type, but anomalous deviations from Berthelot type temperature dependence were observed in temperature dependences of photoluminescence intensities for GeO x /SiO2 multilayer heterostructures.

  13. Giant magnetocaloric effect in isostructural MnNiGe-CoNiGe system by establishing a Curie-temperature window

    KAUST Repository

    Liu, E. K.

    2013-03-28

    An effective scheme of isostructural alloying was applied to establish a Curie-temperature window in isostructural MnNiGe-CoNiGe system. With the simultaneous accomplishment of decreasing structural-transition temperature and converting antiferromagnetic martensite to ferromagnetic state, a 200 K Curie-temperature window was established between Curie temperatures of austenite and martensite phases. In the window, a first-order magnetostructural transition between paramagnetic austenite and ferromagnetic martensite occurs with a sharp jump in magnetization, showing a magnetic entropy change as large as −40 J kg−1 K−1 in a 50 kOe field change. This giant magnetocaloric effect enables Mn1− x Co x NiGe to become a potential magnetic refrigerant.

  14. Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.; Takenaka, M.; Takagi, S. [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and JST-CREST, K' s Gobancho 6F, 7 Gobancho, Chiyoda-ku, Tokyo 102-0076 (Japan)

    2016-07-18

    The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locate in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.

  15. Stellar Laboratories: New GeV and Ge VI Oscillator Strengths and their Validation in the Hot White Dwarf RE0503-289

    Science.gov (United States)

    Rauch, T.; Werner, K.; Biemont, E.; Quinet, P.; Kruk, J. W.

    2013-01-01

    State-of-the-art spectral analysis of hot stars by means of non-LTE model-atmosphere techniques has arrived at a high level of sophistication. The analysis of high-resolution and high-S/N spectra, however, is strongly restricted by the lack of reliable atomic data for highly ionized species from intermediate-mass metals to trans-iron elements. Especially data for the latter has only been sparsely calculated. Many of their lines are identified in spectra of extremely hot, hydrogen-deficient post-AGB stars. A reliable determination of their abundances establishes crucial constraints for AGB nucleosynthesis simulations and, thus, for stellar evolutionary theory. Aims. In a previous analysis of the UV spectrum of RE 0503-289, spectral lines of highly ionized Ga, Ge, As, Se, Kr, Mo, Sn, Te, I, and Xe were identified. Individual abundance determinations are hampered by the lack of reliable oscillator strengths. Most of these identified lines stem from Ge V. In addition, we identified Ge VI lines for the first time. We calculated Ge V and Ge VI oscillator strengths in order to reproduce the observed spectrum. Methods. We newly calculated Ge V and Ge VI oscillator strengths to consider their radiative and collisional bound-bound transitions in detail in our non-LTE stellar-atmosphere models for the analysis of the Ge IV-VI spectrum exhibited in high-resolution and high-S/N FUV (FUSE) and UV (ORFEUS/BEFS, IUE) observations of RE 0503-289. Results. In the UV spectrum of RE 0503-289, we identify four Ge IV, 37 Ge V, and seven Ge VI lines. Most of these lines are identified for the first time in any star. We can reproduce almost all Ge IV, GeV, and Ge VI lines in the observed spectrum of RE 0503-289 (T(sub eff) = 70 kK, log g = 7.5) at log Ge = -3.8 +/- 0.3 (mass fraction, about 650 times solar). The Ge IV/V/VI ionization equilibrium, that is a very sensitive T(sub eff) indicator, is reproduced well. Conclusions. Reliable measurements and calculations of atomic data are a

  16. Optical and structural investigations of self-assembled Ge/Si bi-layer containing Ge QDs

    Energy Technology Data Exchange (ETDEWEB)

    Samavati, Alireza, E-mail: alireza.samavati@yahoo.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Othaman, Z., E-mail: zulothaman@gmail.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Ghoshal, S.K.; Dousti, M.R. [Advanced Optical Material Research Group, Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia)

    2014-10-15

    We report the influence of Si spacer thickness variation (10–40 nm) on structural and optical properties of Ge quantum dots (QDs) in Ge/Si(1 0 0) bi-layer grown by radio frequency magnetron sputtering. AFM images reveal the spacer dependent width, height, root mean square roughness and number density of QDs vary in the range of ∼12–25 nm, ∼2–6 nm, ∼1.95–1.05 nm and ∼0.55×10{sup 11}–2.1×10{sup 11} cm{sup −2}, respectively. XRD patterns exhibit the presence of poly-oriented structures of Ge with preferred growth along (1 1 1) direction accompanied by a reduction in strain from 4.9% to 1.2% (estimated from Williamson–Hall plot) due to bi-layering. The room temperature luminescence displays strong blue–violet peak associated with a blue shift as much as 0.05 eV upon increasing the thickness of Si spacer. This shift is attributed to the quantum size effect, the material intermixing and the strain mediation. Raman spectra for both mono and bi-layer samples show intense Ge–Ge optical phonon mode that is shifted towards higher frequency. Furthermore, the first order features of Raman spectra affirm the occurrence of interfacial intermixing and phase formation during deposition. The excellent features of the results suggest that our systematic method may constitute a basis for the tunable growth of Ge QDs suitable in nanophotonics. - Highlights: • High quality bilayered hetero-structure Ge/Si using economic and easy rf magnetron sputtering fabrication method. • The role of phonon-confinement and strain relaxation mechanisms. • Influence of bilayering on evolutionary growth dynamics. • Band gap shift of visible PL upon bilayering.

  17. QCD studies in $e^{+}e^{-}$ annihilation from 30 GeV to 189 GeV

    CERN Document Server

    Acciarri, M.; Adriani, O.; Aguilar-Benitez, M.; Alcaraz, J.; Alemanni, G.; Allaby, J.; Aloisio, A.; Alviggi, M.G.; Ambrosi, G.; Anderhub, H.; Andreev, Valery P.; Angelescu, T.; Anselmo, F.; Arefev, A.; Azemoon, T.; Aziz, T.; Bagnaia, P.; Bajo, A.; Baksay, L.; Balandras, A.; Baldew, S.V.; Banerjee, S.; Banerjee, Sw.; Barczyk, A.; Barillere, R.; Barone, L.; Bartalini, P.; Basile, M.; Battiston, R.; Bay, A.; Becattini, F.; Becker, U.; Behner, F.; Bellucci, L.; Berbeco, R.; Berdugo, J.; Berges, P.; Bertucci, B.; Betev, B.L.; Bhattacharya, S.; Biasini, M.; Biland, A.; Blaising, J.J.; Blyth, S.C.; Bobbink, G.J.; Bohm, A.; Boldizsar, L.; Borgia, B.; Bourilkov, D.; Bourquin, M.; Braccini, S.; Branson, J.G.; Brigljevic, V.; Brochu, F.; Buffini, A.; Buijs, A.; Burger, J.D.; Burger, W.J.; Cai, X.D.; Campanelli, Mario; Capell, M.; Cara Romeo, G.; Carlino, G.; Cartacci, A.M.; Casaus, J.; Castellini, G.; Cavallari, F.; Cavallo, N.; Cecchi, C.; Cerrada, M.; Cesaroni, F.; Chamizo, M.; Chang, Y.H.; Chaturvedi, U.K.; Chemarin, M.; Chen, A.; Chen, G.; Chen, G.M.; Chen, H.F.; Chen, H.S.; Chiefari, G.; Cifarelli, L.; Cindolo, F.; Civinini, C.; Clare, I.; Clare, R.; Coignet, G.; Colino, N.; Costantini, S.; Cotorobai, F.; de la Cruz, B.; Csilling, A.; Cucciarelli, S.; Dai, T.S.; van Dalen, J.A.; D'Alessandro, R.; de Asmundis, R.; Deglon, P.; Degre, A.; Deiters, K.; della Volpe, D.; Delmeire, E.; Denes, P.; DeNotaristefani, F.; De Salvo, A.; Diemoz, M.; Dierckxsens, M.; van Dierendonck, D.; Di Lodovico, F.; Dionisi, C.; Dittmar, M.; Dominguez, A.; Doria, A.; Dova, M.T.; Duchesneau, D.; Dufournaud, D.; Duinker, P.; Duran, I.; El Mamouni, H.; Engler, A.; Eppling, F.J.; Erne, F.C.; Extermann, P.; Fabre, M.; Faccini, R.; Falagan, M.A.; Falciano, S.; Favara, A.; Fay, J.; Fedin, O.; Felcini, M.; Ferguson, T.; Ferroni, F.; Fesefeldt, H.; Fiandrini, E.; Field, J.H.; Filthaut, F.; Fisher, P.H.; Fisk, I.; Forconi, G.; Freudenreich, K.; Furetta, C.; Galaktionov, Iouri; Ganguli, S.N.; Garcia-Abia, Pablo; Gataullin, M.; Gau, S.S.; Gentile, S.; Gheordanescu, N.; Giagu, S.; Gong, Z.F.; Grenier, Gerald Jean; Grimm, O.; Gruenewald, M.W.; Guida, M.; van Gulik, R.; Gupta, V.K.; Gurtu, A.; Gutay, L.J.; Haas, D.; Hasan, A.; Hatzifotiadou, D.; Hebbeker, T.; Herve, Alain; Hidas, P.; Hirschfelder, J.; Hofer, H.; Holzner, G.; Hoorani, H.; Hou, S.R.; Hu, Y.; Iashvili, I.; Jin, B.N.; Jones, Lawrence W.; de Jong, P.; Josa-Mutuberria, I.; Khan, R.A.; Kaur, M.; Kienzle-Focacci, M.N.; Kim, D.; Kim, J.K.; Kirkby, Jasper; Kiss, D.; Kittel, W.; Klimentov, A.; Konig, A.C.; Kopp, A.; Koutsenko, V.; Kraber, M.; Kraemer, R.W.; Krenz, W.; Kruger, A.; Kunin, A.; Ladron de Guevara, P.; Laktineh, I.; Landi, G.; Lassila-Perini, K.; Lebeau, M.; Lebedev, A.; Lebrun, P.; Lecomte, P.; Lecoq, P.; Le Coultre, P.; Lee, H.J.; Le Goff, J.M.; Leiste, R.; Leonardi, Emanuele; Levtchenko, P.; Li, C.; Likhoded, S.; Lin, C.H.; Lin, W.T.; Linde, F.L.; Lista, L.; Liu, Z.A.; Lohmann, W.; Longo, E.; Lu, Y.S.; Lubelsmeyer, K.; Luci, C.; Luckey, David; Lugnier, L.; Luminari, L.; Lustermann, W.; Ma, W.G.; Maity, M.; Malgeri, L.; Malinin, A.; Mana, C.; Mangeol, D.; Mans, J.; Marchesini, P.; Marian, G.; Martin, J.P.; Marzano, F.; Mazumdar, K.; McNeil, R.R.; Mele, S.; Merola, L.; Meschini, M.; Metzger, W.J.; von der Mey, M.; Mihul, A.; Milcent, H.; Mirabelli, G.; Mnich, J.; Mohanty, G.B.; Molnar, P.; Moulik, T.; Muanza, G.S.; Muijs, A.J.M.; Musicar, B.; Musy, M.; Napolitano, M.; Nessi-Tedaldi, F.; Newman, H.; Niessen, T.; Nisati, A.; Kluge, Hannelies; Organtini, G.; Oulianov, A.; Palomares, C.; Pandoulas, D.; Paoletti, S.; Paolucci, P.; Paramatti, R.; Park, H.K.; Park, I.H.; Passaleva, G.; Patricelli, S.; Paul, Thomas Cantzon; Pauluzzi, M.; Paus, C.; Pauss, F.; Pedace, M.; Pensotti, S.; Perret-Gallix, D.; Petersen, B.; Piccolo, D.; Pierella, F.; Pieri, M.; Piroue, P.A.; Pistolesi, E.; Plyaskin, V.; Pohl, M.; Pojidaev, V.; Postema, H.; Pothier, J.; Prokofev, D.O.; Prokofev, D.; Quartieri, J.; Rahal-Callot, G.; Rahaman, M.A.; Raics, P.; Raja, N.; Ramelli, R.; Rancoita, P.G.; Raspereza, A.; Raven, G.; Razis, P.; Ren, D.; Rescigno, M.; Reucroft, S.; Riemann, S.; Riles, Keith; Robohm, A.; Rodin, J.; Roe, B.P.; Romero, L.; Rosca, A.; Rosier-Lees, S.; Rubio, J.A.; Ruggiero, G.; Ruschmeier, D.; Rykaczewski, H.; Saremi, S.; Sarkar, S.; Salicio, J.; Sanchez, E.; Sanders, M.P.; Sarakinos, M.E.; Schafer, C.; Schegelsky, V.; Schmidt-Kaerst, S.; Schmitz, D.; Schopper, H.; Schotanus, D.J.; Schwering, G.; Sciacca, C.; Sciarrino, D.; Seganti, A.; Servoli, L.; Shevchenko, S.; Shivarov, N.; Shoutko, V.; Shumilov, E.; Shvorob, A.; Siedenburg, T.; Son, D.; Smith, B.; Spillantini, P.; Steuer, M.; Stickland, D.P.; Stone, A.; Stoyanov, B.; Straessner, A.; Sudhakar, K.; Sultanov, G.; Sun, L.Z.; Suter, H.; Swain, J.D.; Szillasi, Z.; Sztaricskai, T.; Tang, X.W.; Tauscher, L.; Taylor, L.; Tellili, B.; Timmermans, Charles; Ting, Samuel C.C.; Ting, S.M.; Tonwar, S.C.; Toth, J.; Tully, C.; Tung, K.L.; Uchida, Y.; Ulbricht, J.; Valente, E.; Vesztergombi, G.; Vetlitsky, I.; Vicinanza, D.; Viertel, G.; Villa, S.; Vivargent, M.; Vlachos, S.; Vodopianov, I.; Vogel, H.; Vogt, H.; Vorobev, I.; Vorobov, A.A.; Vorvolakos, A.; Wadhwa, M.; Wallraff, W.; Wang, M.; Wang, X.L.; Wang, Z.M.; Weber, A.; Weber, M.; Wienemann, P.; Wilkens, H.; Wu, S.X.; Wynhoff, S.; Xia, L.; Xu, Z.Z.; Yamamoto, J.; Yang, B.Z.; Yang, C.G.; Yang, H.J.; Yang, M.; Ye, J.B.; Yeh, S.C.; Zalite, An.; Zalite, Yu.; Zhang, Z.P.; Zhu, G.Y.; Zhu, R.Y.; Zichichi, A.; Zilizi, G.; Zoller, M.

    2000-01-01

    We present results obtained from a study of the structure of hadronic events recorded by the L3 detector at various centre-of-mass energies.The distributions of event shape variables and the energy dependence of their mean values are measured from 30 GeV to 189 GeV and compared with various QCD models. The energy dependence of the moments of event shape variables is used to test a power law ansatz for the non-perturbativecomponent. We obtain a universal value of the non-perturbative parameter$\\alpha_{0}$ = 0.537 $\\pm$ 0.073. From a comparison with resummed$\\cal{O}

  18. $\\alpha_{S}$ Evolution from 35 GeV to 202 GeV and Flavour Independence

    CERN Document Server

    Biebel, O.

    2000-01-01

    Determinations of the strong coupling constant alpha_S at centre-of-mass energies of 192 through 202 GeV at LEP are presented. The energy evolution of alpha_S is in agreement with the prediction of QCD. The combined investigation of OPAL and JADE data in the energy range of 35 through 189 GeV yields alpha_S(m_Z)=0.1187^{+0.0034}_{-0.0019}. The strenght of the strong coupling is flavour independent if quark mass effects are taken into account.

  19. Shielding Design Aspects of SR Beamlines for 3-GeV And 8-GeV Class Synchrotron Radiation Facilities

    Energy Technology Data Exchange (ETDEWEB)

    Asano, Yoshihiro; /JAERI-RIKEN, Hyogo; Liu, James C.; Rokni, Sayed; /SLAC

    2007-09-24

    Differences in synchrotron radiation beamline shielding design between the facilities of 3 GeV class and 8 GeV class are discussed with regard to SLAC SSRL and SPring-8 beamlines. Requirements of beamline shielding as well as the accelerator shielding depend on the stored electron energy, and here some factors in beamline shielding depending on the stored energy in particular, are clarified, namely the effect of build up, the effect of double scattering of photons at branch beamlines, and the spread of gas bremsstrahlung.

  20. Search for Spontaneous R-parity violation at $\\sqrt{s}$ = 183 GeV and 189 GeV

    CERN Document Server

    Abreu, P.; Adye, T.; Adzic, P.; Albrecht, Z.; Alderweireld, T.; Alekseev, G.D.; Alemany, R.; Allmendinger, T.; Allport, P.P.; Almehed, S.; Amaldi, U.; Amapane, N.; Amato, S.; Anashkin, E.; Anassontzis, E.G.; Andersson, P.; Andreazza, A.; Andringa, S.; Anjos, N.; Antilogus, P.; Apel, W.D.; Arnoud, Y.; Esman, B.; Augustin, J.E.; Augustinus, A.; Baillon, P.; Ballestrero, A.; Bambade, P.; Barao, F.; Barbiellini, G.; Barbier, R.; Bardin, D.Y.; Barker, G.J.; Baroncelli, A.; Battaglia, M.; Baubillier, M.; Becks, K.H.; Begalli, M.; Behrmann, A.; Belokopytov, Yu.; Belous, K.; Benekos, N.C.; Benvenuti, A.C.; Berat, C.; Berggren, M.; Berntzon, L.; Bertrand, D.; Besancon, M.; Besson, N.; Bilenky, Mikhail S.; Bloch, D.; Blom, H.M.; Bol, L.; Bonesini, M.; Boonekamp, M.; Booth, P.S.L.; Borisov, G.; Bosio, C.; Botner, O.; Boudinov, E.; Bouquet, B.; Bowcock, T.J.V.; Boyko, I.; Bozovic, I.; Bozzo, M.; Bracko, M.; Branchini, P.; Brenner, R.A.; Brodet, E.; Bruckman, P.; Brunet, J.M.; Bugge, L.; Buschmann, P.; Caccia, M.; Calvi, M.; Camporesi, T.; Canale, V.; Carena, F.; Carroll, L.; Caso, C.; Castillo Gimenez, M.V.; Cattai, A.; Cavallo, F.R.; Chapkin, M.; Charpentier, Ph.; Checchia, P.; Chelkov, G.A.; Chierici, R.; Chliapnikov, P.; Chochula, P.; Chorowicz, V.; Chudoba, J.; Cieslik, K.; Collins, P.; Contri, R.; Cortina, E.; Cosme, G.; Cossutti, F.; Costa, M.; Crawley, H.B.; Crennell, D.; Croix, J.; Cuevas Maestro, J.; Czellar, S.; D'Hondt, J.; Dalmau, J.; Davenport, M.; Da Silva, W.; Della Ricca, G.; Delpierre, P.; Demaria, N.; De Angelis, A.; De Boer, W.; De Clercq, C.; De Lotto, B.; De Min, A.; De Paula, L.; Dijkstra, H.; Di Ciaccio, L.; Doroba, K.; Dracos, M.; Drees, J.; Dris, M.; Eigen, G.; Ekelof, T.; Ellert, M.; Elsing, M.; Engel, J.P.; Espirito Santo, M.C.; Fanourakis, G.; Fassouliotis, D.; Feindt, M.; Fernandez, J.; Ferrer, A.; Ferrer-Ribas, E.; Ferro, F.; Firestone, A.; Flagmeyer, U.; Foeth, H.; Fokitis, E.; Fontanelli, F.; Franek, B.; Frodesen, A.G.; Fruhwirth, R.; Fulda-Quenzer, F.; Fuster, J.; Gamba, D.; Gamblin, S.; Gandelman, M.; Garcia, C.; Gaspar, C.; Gaspar, M.; Gasparini, U.; Gavillet, Ph.; Gazis, Evangelos; Gele, D.; Geralis, T.; Ghodbane, N.; Gil Botella, Ines; Glege, F.; Gokieli, R.; Golob, B.; Gomez-Ceballos, G.; Goncalves, P.; Gonzalez Caballero, I.; Gopal, G.; Gorn, L.; Gouz, Yu.; Gracco, V.; Grahl, J.; Graziani, E.; Grosdidier, G.; Grzelak, K.; Guy, J.; Haag, C.; Hahn, F.; Hahn, S.; Haider, S.; Hallgren, A.; Hamacher, K.; Hamilton, K.; Hansen, J.; Harris, F.J.; Haug, S.; Hauler, F.; Hedberg, V.; Heising, S.; Hernandez, J.J.; Herquet, P.; Herr, H.; Hertz, O.; Higon, E.; Holmgren, S.O.; Holt, P.J.; Hoorelbeke, S.; Houlden, M.; Hrubec, J.; Hughes, G.J.; Hultqvist, K.; Jackson, John Neil; Jacobsson, R.; Jalocha, P.; Jarlskog, Ch.; Jarlskog, G.; Jarry, P.; Jean-Marie, B.; Jeans, D.; Johansson, Erik Karl; Jonsson, P.; Joram, C.; Juillot, P.; Jungermann, L.; Kapusta, Frederic; Karafasoulis, K.; Katsanevas, S.; Katsoufis, E.C.; Keranen, R.; Kernel, G.; Kersevan, B.P.; Khokhlov, Yu.A.; Khomenko, B.A.; Khovanski, N.N.; Kiiskinen, A.; King, B.; Kinvig, A.; Kjaer, N.J.; Klapp, O.; Kluit, P.; Kokkinias, P.; Kostioukhine, V.; Kourkoumelis, C.; Kouznetsov, O.; Krammer, M.; Kriznic, E.; Krumstein, Z.; Kubinec, P.; Kucharczyk, M.; Kurowska, J.; Lamsa, J.W.; Laugier, J.P.; Leder, G.; Ledroit, Fabienne; Leinonen, L.; Leisos, A.; Leitner, R.; Lenzen, G.; Lepeltier, V.; Lesiak, T.; Lethuillier, M.; Libby, J.; Liebig, W.; Liko, D.; Lipniacka, A.; Lippi, I.; Loken, J.G.; Lopes, J.H.; Lopez, J.M.; Lopez-Fernandez, R.; Loukas, D.; Lutz, P.; Lyons, L.; MacNaughton, J.; Mahon, J.R.; Maio, A.; Malek, A.; Maltezos, S.; Malychev, V.; Mandl, F.; Marco, J.; Marco, R.; Marechal, B.; Margoni, M.; Marin, J.C.; Mariotti, C.; Markou, A.; Martinez-Rivero, C.; Marti i Garcia, S.; Masik, J.; Mastroyiannopoulos, N.; Matorras, F.; Matteuzzi, C.; Matthiae, G.; Mazzucato, F.; Mazzucato, M.; McCubbin, M.; McKay, R.; McNulty, R.; Merle, E.; Meroni, C.; Meyer, W.T.; Miagkov, A.; Migliore, E.; Mirabito, L.; Mitaroff, W.A.; Mjoernmark, U.; Moa, T.; Moch, M.; Monig, Klaus; Monge, M.R.; Montenegro, J.; Moraes, D.; Morettini, P.; Morton, G.; Mueller, U.; Muenich, K.; Mulders, M.; Mundim, L.M.; Murray, W.J.; Muryn, B.; Myatt, G.; Myklebust, T.; Nassiakou, M.; Navarria, F.L.; Nawrocki, K.; Negri, P.; Nemecek, S.; Neufeld, N.; Nicolaidou, R.; Niezurawski, P.; Nikolenko, M.; Nomokonov, V.; Nygren, A.; Obraztsov, V.; Olshevski, A.G.; Onofre, A.; Orava, R.; Osterberg, K.; Ouraou, A.; Oyanguren, A.; Paganoni, M.; Paiano, S.; Pain, R.; Paiva, R.; Palacios, J.; Palka, H.; Papadopoulou, Th.D.; Pape, L.; Parkes, C.; Parodi, F.; Parzefall, U.; Passeri, A.; Passon, O.; Peralta, L.; Perepelitsa, V.; Pernicka, M.; Perrotta, A.; Petridou, C.; Petrolini, A.; Phillips, H.T.; Pierre, F.; Pimenta, M.; Piotto, E.; Podobnik, T.; Poireau, V.; Pol, M.E.; Polok, G.; Poropat, P.; Pozdniakov, V.; Privitera, P.; Pukhaeva, N.; Pullia, A.; Radojicic, D.; Ragazzi, S.; Rahmani, H.; Read, Alexander L.; Rebecchi, P.; Redaelli, Nicola Giuseppe; Regler, M.; Rehn, J.; Reid, D.; Reinhardt, R.; Renton, P.B.; Resvanis, L.K.; Richard, F.; Ridky, J.; Rinaudo, G.; Ripp-Baudot, Isabelle; Romero, A.; Ronchese, P.; Rosenberg, E.I.; Rosinsky, P.; Roudeau, P.; Rovelli, T.; Ruhlmann-Kleider, V.; Ruiz, A.; Saarikko, H.; Sacquin, Y.; Sadovsky, A.; Sajot, G.; Salmi, L.; Salt, J.; Sampsonidis, D.; Sannino, M.; Savoy-Navarro, A.; Schwanda, C.; Schwemling, Ph.; Schwering, B.; Schwickerath, U.; Scuri, Fabrizio; Sedykh, Y.; Segar, A.M.; Sekulin, R.; Sette, G.; Shellard, R.C.; Siebel, M.; Simard, L.; Simonetto, F.; Sisakian, A.N.; Smadja, G.; Smirnova, O.; Smith, G.R.; Sokolov, A.; Solovianov, O.; Sopczak, A.; Sosnowski, R.; Spassov, T.; Spiriti, E.; Squarcia, S.; Stanescu, C.; Stanitzki, M.; Stocchi, A.; Strauss, J.; Strub, R.; Stugu, B.; Szczekowski, M.; Szeptycka, M.; Tabarelli, T.; Taffard, A.; Tegenfeldt, F.; Terranova, F.; Timmermans, Jan; Tinti, N.; Tkatchev, L.G.; Tobin, M.; Todorova, S.; Tome, B.; Tonazzo, A.; Tortora, L.; Tortosa, P.; Treille, D.; Tristram, G.; Trochimczuk, M.; Troncon, C.; Turluer, M.L.; Tyapkin, I.A.; Tyapkin, P.; Tzamarias, S.; Ullaland, O.; Uvarov, V.; Valenti, G.; Vallazza, E.; Van Dam, Piet; Van den Boeck, W.; Van Eldik, J.; Van Lysebetten, A.; van Remortel, N.; Van Vulpen, I.; Vegni, G.; Ventura, L.; Venus, W.; Verbeure, F.; Verdier, P.; Verlato, M.; Vertogradov, L.S.; Verzi, V.; Vilanova, D.; Vitale, L.; Vlasov, E.; Vodopianov, A.S.; Voulgaris, G.; Vrba, V.; Wahlen, H.; Washbrook, A.J.; Weiser, C.; Wicke, D.; Wickens, J.H.; Wilkinson, G.R.; Winter, M.; Witek, M.; Wolf, G.; Yi, J.; Yushchenko, O.; Zalewska, A.; Zalewski, P.; Zavrtanik, D.; Zevgolatakos, E.; Zimine, N.I.; Zintchenko, A.; Zoller, Ph.; Zumerle, G.; Zupan, M.

    2001-01-01

    Searches for spontaneous $R$-parity violating signals at $\\sqrt{s}=183$\\,GeV and \\mbox{$\\sqrt{s}=189$\\,GeV} have been performed using 1997 and 1998 DELPHI data, under the assumption of $R$-parity breaking in the third lepton family. The expected topology for the decay of a pair of charginos into two acoplanar taus plus missing energy was investigated and no evidence for a signal was found. The results were used to derive a limit on the chargino mass and to constrain the allowed domains of the MSSM parameter sp.

  1. The Ho–Ni–Ge system: Isothermal section and new rare-earth nickel germanides

    Energy Technology Data Exchange (ETDEWEB)

    Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Knotko, A.V. [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Faculty of Geology, Moscow State University, Leninskie Gory, Moscow 119992 (Russian Federation); Yuan, Fang; Mozharivskyj, Y. [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1 (Canada); Pani, M.; Provino, A.; Manfrinetti, P. [Institute SPIN-CNR and Dipartimento di Chimica e Chimica Industriale, Università di Genova, Via Dodecaneso 31, 16146 Genova (Italy)

    2015-05-15

    The Ho–Ni–Ge system has been investigated at 1070 K and up to ~60 at% Ho by X-ray diffraction and microprobe analyses. Besides the eight known compounds, HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type), HoNi{sub 2}Ge{sub 2} (CeAl{sub 2}Ga{sub 2}-type), Ho{sub 2}NiGe{sub 6} (Ce{sub 2}CuGe{sub 6}-type), HoNiGe{sub 3} (SmNiGe{sub 3}-type), HoNi{sub 0.2÷0.6}Ge{sub 2} (CeNiSi{sub 2}-type), Ho{sub 37÷34}Ni{sub 6÷24}Ge{sub 57÷42} (AlB{sub 2}-type), HoNiGe (TiNiSi-type), Ho{sub 3}NiGe{sub 2} (La{sub 3}NiGe{sub 2}-type), the ternary system contains four new compounds: Ho{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type), HoNi{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Ho{sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) and ~Ho{sub 5}Ni{sub 2}Ge{sub 3} (unknown structure). Quasi-binary solid solutions were observed at 1070 K for Ho{sub 2}Ni{sub 17}, HoNi{sub 5}, HoNi{sub 7}, HoNi{sub 3}, HoNi{sub 2}, HoNi and Ho{sub 2}Ge{sub 3}, but no detectable solubility was found for the other binary compounds in the Ho–Ni–Ge system. Based on the magnetization measurements, the HoNi{sub 5}Ge{sub 3}, HoNi{sub 3}Ge{sub 2} and Ho{sub 3}Ni{sub 11}Ge{sub 4} (and isostructural (Tb, Dy){sub 3}Ni{sub 11}Ge{sub 4}) compounds have been found to show paramagnetic behavior down to 5 K, whereas Ho{sub 3}Ni{sub 2}Ge{sub 3} exhibits an antiferromagnetic transition at ~7 K. Additionally, the crystal structure of the new isostructural phases (Y, Yb)Ni{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Er{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type) and (Y, Tb, Dy, Er, Tm){sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) has been also investigated. - Graphical abstract: The Ho–Ni–Ge system has been investigated at 1070 K and up to ~60 at.% Ho by X-ray and microprobe analyses. Besides the eight known compounds, i.e. HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type), HoNi{sub 2}Ge{sub 2} (CeAl{sub 2}Ga{sub 2}-type), Ho{sub 2}NiGe{sub 6} (Ce{sub 2

  2. First-principles calculations on the origin of ferromagnetism in transition-metal doped Ge

    Science.gov (United States)

    Shinya, Hikari; Fukushima, Tetsuya; Masago, Akira; Sato, Kazunori; Katayama-Yoshida, Hiroshi

    2017-09-01

    Many researchers have shown an interest in Ge-based dilute magnetic semiconductors (DMSs) due to potential advantages for semiconductor spintronics applications. There has been great discussion about mechanisms of experimentally observed ferromagnetism in (Ge,Fe) and (Ge,Mn). We investigate the electronic structures, structural stabilities, magnetic exchange coupling constants, and Curie temperature of Ge-based DMSs, and clarify origins of the ferromagnetism, on the basis of density functional theory calculations. In both the (Ge,Fe) and (Ge,Mn) cases, the inhomogeneous distribution of the magnetic impurities plays an important role to determine the magnetic states; however, physical mechanisms of the ferromagnetism in these two materials are completely different. By the spinodal nanodecomposition, the Fe impurities in Ge gather together with keeping the diamond structure, so that the number of the first-nearest-neighbor Fe pairs with strong ferromagnetic interaction increases. Therefore, the Curie temperature drastically increases with the progress of the annealing. Our cluster expansion method clearly reveals that the other ordered compounds with different crystal structures such as Ge3Mn5 and Ge8Mn11 are easily generated in the (Ge,Mn) system. The estimated Curie temperature of Ge3Mn5 is in agreement with the observed Curie temperature in experiments. It should be considered that the precipitation of the ferromagnetic Ge3Mn5 clusters is an origin of high Curie temperature in (Ge,Mn).

  3. EXAFS spectroscopic refinement of amorphous structures of evaporation-deposited Ge-Se films

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Yong Gyu, E-mail: ygchoi@kau.ac.kr [Department of Materials Science and Engineering, Korea Aerospace University, Gyeonggi 412-791 (Korea, Republic of); Shin, Sang Yeol [Department of Materials Science and Engineering, Korea Aerospace University, Gyeonggi 412-791 (Korea, Republic of); Golovchak, Roman [Department of Physics and Astronomy, Austin Peay State University, Clarksville, TN 37044 (United States); Lee, Suyoun; Cheong, Byung-ki [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Jain, Himanshu [Department of Materials Science and Engineering, Lehigh University, Bethlehem, PA 18015 (United States)

    2015-02-15

    Highlights: • EXAFS analysis reveals that amorphous structure of Ge{sub x}Se{sub 100-x} films follows the 4(Ge):2(Se) structural model. • Ge{sub 49}Se{sub 51} composition crystallizes into orthorhombic GeSe crystalline phase and quasi-crystalline Ge cluster. • This significant difference between amorphous and crystalline states is a signature of phase change compositions. - Abstract: EXAFS spectroscopic analysis is employed to elucidate the amorphous structure of evaporation-deposited Ge{sub x}Se{sub 100-x} (x = 30, 49 or 69 in at%) films. The difficulty in the determination of local structure resulting from the similar backscattering amplitude of Ge and Se atoms has been overcome through comparative analysis of film specimens subjected to controlled heat treatment. Our results indicate that the 4(Ge):2(Se) structural model, which satisfies the (8 - N) rule, is valid for all of the compositions studied. However, the nearly equiatomic Ge{sub 49}Se{sub 51} composition with 4(Ge):2(Se) amorphous structure crystallizes into orthorhombic GeSe crystalline phase with 3(Ge):3(Se) structural arrangements and quasi-crystalline Ge clusters. This significant difference in the local structure of amorphous and crystalline states is a distinctive signature of phase change compositions.

  4. Green laser crystallization of GeSi thin films

    NARCIS (Netherlands)

    Rangarajan, B.; Brunets, I.; Oesterlin, Peter; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2011-01-01

    Green laser crystallization of a-Ge0.85Si0.15 films deposited using Low Pressure Chemical Vapour Deposition is studied. Large grains of 8x2 μm2 size were formed using a location-controlled approach. Characterization is done using Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray

  5. Tilflyttere til nybyggeri i Køge Kommune

    DEFF Research Database (Denmark)

    Haagerup, Christian Deichmann; Ærø, Thorkild

    I rapporten er udviklet metoder og redskaber, som den kommunale planlægning kan benytte i håndteringen af demografi ske og kommunaløkonomiske udfordringer i fremtiden. Rapporten belyser, ved hjælp af spørgeskemaundersøgelse og fokusgruppeinterviews, tilflytterne til nybyggeri i Køge Kommune samt ...

  6. XML Schema of PaGE-OM: fuge.xsd [

    Lifescience Database Archive (English)

    Full Text Available cters that identifies an abstract or physical resource. FuGE (http://fuge.sourceforge.net/) is a model of the shared compon...://www.omg.org/spec/PAGE-OM/20090722/snp schemaLocation=snp.xsd/> ... type=fuge:Ontology_source/> rce> The source... maxOccurs=1> A URI is short for Uniform Resource Identifier.

  7. How To Check PML/PaGE-OM Schema [

    Lifescience Database Archive (English)

    Full Text Available How To Check PML/PaGE-OM Schema PML Schema Cheker page stopped serving. To check your XML schema validation....NET Open your XML Datafile by XML editor. Open your XML Schema file by XML editor for validation

  8. CMS event at 900 GeV - 5 May 2015

    CERN Multimedia

    CMS, Collaboration

    2015-01-01

    This proton collision di-jet event was detected at the CMS detector. The red bars represent the energy deposited in the electromagnetic calorimeter and the blue represent the energy in the hadronic calorimeter. The total hadronic and electromagnetic energy is approximately 30 GeV in each jet. The back-to-back jet cones can be clearly seen emanating from the vertex.

  9. Magnetic and Structural Properties of Co5 Ge3 Nanoparticles

    Science.gov (United States)

    Salehi-Fashami, Mohammad; Deepchand, Vimal; Skomski, Ralph; Sellmyer, David J.; Hadjipanayis, George C.

    Magnetic semiconductor alloy nanostructures play a crucial role in advanced technologies due to their tunable band gaps and electronic properties. Among these magnetic semiconductor alloys, Co-Ge is important both scientifically and technologically. In this work, we studied the magnetic and transport properties of Co5Ge3 nanoparticles(NPs) fabricated by cluster-beam deposition. The NPs were characterized by X-ray powder diffraction and the results demonstrated that they had the same hexagonal structure P63/mm-type as in bulk.Transmission-electron-microscope observations revealed that the particles have a single crystalline structure with an average size of 8nm. Selected-area electron diffraction(SAED) confirmed the XRD data, showing clearly that the particles have the hexagonal structure mentioned above. High-resolution electron microscopy images show lattice fringes with spacing of 1.99A and 2.02A which correspond to the (102) and (110) superlattice reflections of the hexagonal ordered Co5Ge3 structure. Magnetic properties showed that these nanoparticles are ferromagnetic at room temperature as-compared to bulk samples that are paramagnetic at all temperatures. This magnetic behavior in Co-Ge nanoparticles indicates new size-controlled spin structures in confined nanosize systems. Work supported by DOE DE-FG02-04ERU4612 and DE-FG02-04ER46152.

  10. Thermoelastic-strain-induced thermoelectric effect in n-Ge

    Science.gov (United States)

    Musaev, A. M.

    2014-10-01

    A new physical mechanism responsible for the appearance of anomalous thermo-emf in n-Ge, the sign of which is opposite to that of the Seebeck thermo-emf, is considered. It is shown that the anomalous thermoelectric effect is related to the redistribution of charge carriers in the energy extrema of bands during thermoelastic deformation of the crystal.

  11. Anomalous activation of shallow B+ implants in Ge

    DEFF Research Database (Denmark)

    Yates, B.R.; Darby, B.L.; Rudawski, N.G.

    2011-01-01

    The electrical activation of B+ implantation at 2 keV to doses of 5.0×1013-5.0×1015 cm-2 in crystalline and pre-amorphized Ge following annealing at 400 °C for 1.0 h was studied using micro Hall effect measurements. Preamorphization improved activation for all samples with the samples implanted t...

  12. Electrical conduction mechanism in GeSeSb chalcogenide glasses

    Indian Academy of Sciences (India)

    . 1. Introduction. To the best of our knowledge, every sector of scientific field, especially in material science, has gained remarkable improvements. Despite of several existing semiconducting materials (e.g., Si, Ge, GaAs and many more) and ...

  13. On the DAMA and CoGeNT Modulations

    DEFF Research Database (Denmark)

    Frandsen, Mads Toudal; Kahlhoefer, Felix; March-Russell, John

    2011-01-01

    DAMA observes an annual modulation in their event rate, as might be expected from dark matter scatterings, while CoGeNT has reported evidence for a similar modulation. The simplest interpretation of these findings in terms of dark matter-nucleus scatterings is excluded by other direct detection e...

  14. 300 GeV Up-dated design study

    CERN Multimedia

    1967-01-01

    The 'Report on the Design Study of a 300 GeV Proton Synchrotron' (document CERN/ 563) was issued in November 1964. An Addendum (document CERN/702) to this Design Study was issued on 30 May as one of the up-to-date set of documents and relevant costs presented to the June Council Meeting.

  15. 750 GeV diphoton resonance and electric dipole moments

    Directory of Open Access Journals (Sweden)

    Kiwoon Choi

    2016-09-01

    Full Text Available We examine the implication of the recently observed 750 GeV diphoton excess for the electric dipole moments of the neutron and electron. If the excess is due to a spin zero resonance which couples to photons and gluons through the loops of massive vector-like fermions, the resulting neutron electric dipole moment can be comparable to the present experimental bound if the CP-violating angle α in the underlying new physics is of O(10−1. An electron EDM comparable to the present bound can be achieved through a mixing between the 750 GeV resonance and the Standard Model Higgs boson, if the mixing angle itself for an approximately pseudoscalar resonance, or the mixing angle times the CP-violating angle α for an approximately scalar resonance, is of O(10−3. For the case that the 750 GeV resonance corresponds to a composite pseudo-Nambu–Goldstone boson formed by a QCD-like hypercolor dynamics confining at ΛHC, the resulting neutron EDM can be estimated with α∼(750 GeV/ΛHC2θHC, where θHC is the hypercolor vacuum angle.

  16. Demand Response Performance of GE Hybrid Heat Pump Water Heater

    Energy Technology Data Exchange (ETDEWEB)

    Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.

    2013-07-01

    This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation “Brillion”-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in “Standard” electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in “Heat Pump” mode to provide the comparison to heat pump-only demand response. It is expected that “Hybrid” DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.

  17. The JLAB 12 GeV Energy Upgrade of CEBAF

    Energy Technology Data Exchange (ETDEWEB)

    Harwood, Leigh H. [JLAB

    2013-12-01

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, procurement, installation and commissioning of the magnet and SRF components of the upgrade.

  18. Substrate Effects in Wideband SiGe HBT Mixer Circuits

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

    2005-01-01

    In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations...

  19. Spin-configurations in thermoelectric MnCoGe materials

    Science.gov (United States)

    Hahn, Konstanze; Portavoce, Alain; Bertaina, Sylvain; Charai, Ahmed

    In the last decades, research for improved thermoelectric materials focused on the introduction of nanostructures. However, only modest enhancement of the thermoelectric efficiency could be achieved. For improved thermoelectric performance another approach is required. In this respect, temperature driven spin transport in magnetic materials offers great potential. The ternary Mn-Co-Ge, for example, shows interesting magnetocaloric and thermoelectric properties. Magnetic properties of ferromagnetic CoxMnyGe1-x-y thin films, for example, have been shown experimentally to vary with composition x and y, suggesting a possible tuning of the CoxMnyGe1-x-y properties to meet application's requirements. In this study, structural and magnetic transitions in MnGe-based materials with varying composition have been investigated using ab initio calculations. In particular, the effect of chemical composition on the stability of the hexagonal Ni2In-type and the orthorhombic TiNiSi-type structure has been examined focusing on their magnetic configurations. It has been found that compressive strain promotes the formation of the Ni2In-type structure which can be advantageous for the magnetostructural transition in thermomagnetic devices. The spin-Seebeck coefficient has been estimated for several magnetic configurations of such materials based on the Boltzmann transport. This work is financed by the A*MIDEX foundation.

  20. Ultra thin films of nanocrystalline Ge studied by AFM and ...

    Indian Academy of Sciences (India)

    Initial growth stages of the ultra thin films of germanium (Ge) prepared by ion beam sputter deposition have been studied using atomic force microscope (AFM) and interference enhanced Raman scattering. The growth of the films follows Volmer-Weber growth mechanism. Analysis of the AFM images shows that Ostwald ...

  1. Antilocalization of Coulomb Blockade in a Ge-Si Nanowire

    DEFF Research Database (Denmark)

    Higginbotham, Andrew P.; Kuemmeth, Ferdinand; Larsen, Thorvald Wadum

    2014-01-01

    The distribution of Coulomb blockade peak heights as a function of magnetic field is investigated experimentally in a Ge-Si nanowire quantum dot. Strong spin-orbit coupling in this hole-gas system leads to antilocalization of Coulomb blockade peaks, consistent with theory. In particular, the peak...

  2. Solar proton event damage in space-borne Ge detectors

    NARCIS (Netherlands)

    Quarati, F.; Brandenburg, S.; Buis, E. -J.; Dressler, P.; Kraft, S.; Lampert, M. -O.; Ostendorf, R. W.; Owens, Alan; Peacock, A.; Quirin, P.; Quirion, D.

    2009-01-01

    By means of annealing it has been possible to fully restore the spectral performance of Ge detector after exposure to simulated Solar Proton Events (SPE) of integrated fluences up to 6 x 10(10) protons/cm(2). The required annealing time to achieve the restoration of energy resolution, the ratio

  3. USA hiiglane GE Healthcare korraldab meditsiinis revolutsiooni / Andrew Jack

    Index Scriptorium Estoniae

    Jack, Andrew

    2006-01-01

    General Electricu tütarettevõte GE Healthcare võttis üle Briti diagnostika- ja bioteaduse uurimisfirma Amersham, firma strateegia tuum on võimsa skaneerimistehnoloogia ja meditsiinilise diagnostika üksteisele lähendamine. Lisa: Aeg sorteerida andmeid infotehnoloogia abil

  4. Synthesis and characterization of germanium monosulphide (GeS ...

    Indian Academy of Sciences (India)

    fectly stoichiometric. 2. Single crystals of GeS grown with NH4Cl as the transporting agent are slightly off-stoichiometric. 3. Off-stoichiometry is increased when the crystals are grown by the PVT tech- nique where no transporting agent is used. Measured values of the in-plane (perpendicular to c-axis) resistivity ρ (Ω cm) in.

  5. Geëcologiseerde samenleving versus arme mensen

    NARCIS (Netherlands)

    Gils, van S.H.; Vet, L.E.M.

    2015-01-01

    Niemand weet hoeveel milieubelasting de aarde precies kan hebben, maar een ecologische crisis van ongekende proporties ligt voortdurend op de loer, stellen Stijn van Gils en Louise Vet. Ze pleiten voor radicale veranderingen in de maatschappij. Zo’n ‘geëcologiseerde samenleving’ is volgens hen niet

  6. Energy relaxation in optically excited Si and Ge nanocrystals

    NARCIS (Netherlands)

    Saeed, S.

    2014-01-01

    The scientific objective of the research presented in this thesis is to explore energy relaxation processes of optically excited Si and Ge nanocrystals. The identification and deeper understanding of unique energy relaxation paths in these materials will open a new window of opportunity for these

  7. 7-GeV Advanced Photon Source Conceptual Design Report

    Energy Technology Data Exchange (ETDEWEB)

    1987-04-01

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

  8. Synthesis and characterization of germanium monosulphide (GeS ...

    Indian Academy of Sciences (India)

    This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) ...

  9. Scattering tensors and optical transitions in Si and Ge

    CSIR Research Space (South Africa)

    Kunert, HW

    2012-08-01

    Full Text Available The selection rules (SR’s) for the Kronecker product (KP) of Si and Ge irreducible representations (irreps) are required to determine the intervalley scattering processes. The SR’s for transitions between the lowest conduction band minima at Γ, X...

  10. Innovative Ge Quantum Dot Functional Sensing/Metrology Devices

    Science.gov (United States)

    2015-05-20

    Final 3. DATES COVERED (From - To) 20140507 - 20150506 4. TITLE AND SUBTITLE Innovative Ge Quantum Dot Functional Sensing/ Metrology ...unlimited. 13. SUPPLEMENTARY NOTES 14. ABSTRACT Motivation to employ QDs for primary sensing and metrology devices is strong in light of peculiar...optical and thermal properties of QDs that has opened up access to wide-ranging applications in logics, computing, photonics, and metrology

  11. Photometric techniques, performance and PSF characterization of GeMS

    NARCIS (Netherlands)

    Turri, Paolo; McConnachie, Alan W.; Stetson, Peter B.; Andersen, David R.; Véran, Jean-Pierre; Fiorentino, Giuliana; Massari, Davide

    2016-01-01

    GeMS is the multi-conjugate adaptive optics instrument at the Gemini South telescope in Chile, the first facility-class MCAO system and the first to use laser guide stars. During its science verification period we have observed the Galactic globular cluster NGC 1851 and here we discuss the

  12. Ultra thin films of nanocrystalline Ge studied by AFM and ...

    Indian Academy of Sciences (India)

    Unknown

    possibility of developing quantum lasers, single electron transistors and various other applications.2 ... In the initial growth of thin films, three types of growth can occur, depending on the surface free energy of the ... nano devices and single electron transistors.9 In this context, initial growth stages of Ge ultra thin films on ...

  13. Gender Determination using Fingertip Features | Wang | Internet ...

    African Journals Online (AJOL)

    Several previous studies have investigated the gender difference of the fingerprint features. However, regarding to the statistical significance of such differences, inconsistent results have been obtained. To resolve this problem and to develop a method for gender determination, this work proposes and tests three fingertip ...

  14. DONG JIE Zhang, LIANG Wang, ZHON

    Indian Academy of Sciences (India)

    User

    Institute of animal husbandry, Heilongjiang Academy of Agricultural Sciences, Harbin 150086, China. Introduction ... Three fragments of the 5' UTR of the pig Foxn1 gene were obtained by PCR amplification. Primer ... The complete CDS of GATA-1 (NC_010461) and Sp1 (NC_010447) were cloned by RT-PCR. The.

  15. A Presuppositional Approach to Conceptual Schemes | Wang ...

    African Journals Online (AJOL)

    ; for they have been focused too much on the truth-conditional notions of meaning/concepts and translation/interpretation in Tarski's style. It is exactly due to such a Quinean interpretation of the notion of conceptual schemes that the very notion ...

  16. Control of Ge1-x-y Si x Sn y layer lattice constant for energy band alignment in Ge1-x Sn x /Ge1-x-y Si x Sn y heterostructures

    Science.gov (United States)

    Fukuda, Masahiro; Watanabe, Kazuhiro; Sakashita, Mitsuo; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki

    2017-10-01

    The energy band alignment of Ge1-x Sn x /Ge1-x-y Si x Sn y heterostructures was investigated, and control of the valence band offset at the Ge1-x Sn x /Ge1-x-y Si x Sn y heterointerface was achieved by controlling the Si and Sn contents in the Ge1-x-y Si x Sn y layer. The valence band offset in the Ge0.902Sn0.098/Ge0.41Si0.50Sn0.09 heterostructure was evaluated to be as high as 330 meV, and its conduction band offset was estimated to be 150 meV by considering the energy bandgap calculated from the theoretical prediction. In addition, the formation of the strain-relaxed Ge1-x-y Si x Sn y layer was examined and the crystalline structure was characterized. The epitaxial growth of a strain-relaxed Ge0.64Si0.21Sn0.15 layer with the degree of strain relaxation of 55% was examined using a virtual Ge substrate. Moreover, enhancement of the strain relaxation was demonstrated by post-deposition annealing, where a degree of strain relaxation of 70% was achieved after annealing at 400 °C. These results indicate the possibility for enhancing the indirect-direct crossover with a strained and high-Sn-content Ge1-x Sn x layer on a strain-relaxed Ge1-x-y Si x Sn y layer, realizing preferable carrier confinement by type-I energy band alignment with high conduction and valence band offsets.

  17. A high performance Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel

    Science.gov (United States)

    Li, Wei; Liu, Hongxia; Wang, Shulong; Wang, Qianqiong; Chen, Shupeng

    2017-06-01

    In this paper, a new Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel (Ge_DUTFET) is proposed and investigated by Silvaco-Atlas simulation. The line tunneling perpendicular to channel and point tunneling parallel to channel simultaneously occur on both sides of the gate. The Ge is chosen as the source region material to increase the line tunneling current. The designed heterojunction between the Ge source and Si channel decreases the point tunneling barrier width to enhance the point tunneling current. And this heterojunction can also promote the Ge_DUTFET to occur point tunneling at the small gate voltage, which makes it obtain the smaller turn-on voltage. Furthermore, the Si0.5Ge0.5 buffer layer is also helpful for the enhancement of performance. The simulation results reveal that Ge_DUTFET has the better performance compared with the Si_DUTFET. The on-state current and average subthreshold swing of Ge_DUTFET are 1.11 × 10-5A/μm and 35.1mV/dec respectively. The max cut-off frequency (fT) and gain bandwidth product (GBW) are 26.6 GHz and 16.6 GHz respectively. The fT and GBW of the Ge_DUTFET are respectively increased by ∼27.4% and ∼84.3% compared with the Si_DUTFET.

  18. Defect and dislocation structures in low-temperature-grown Ge and Ge{sub 1−x}Sn{sub x} epitaxial layers on Si(110) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kidowaki, Shohei [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Asano, Takanori [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Research Fellow of Japan Society for the Promotion of Science, 5-3-1, Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Shimura, Yosuke [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Kurosawa, Masashi [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Taoka, Noriyuki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakatsuka, Osamu, E-mail: nakatuka@alice.xtal.nagoya-u.ac.jp [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2016-01-01

    We have investigated the epitaxial growth and crystalline properties of Ge{sub 1−x}Sn{sub x} layers on a Si(110) substrate. We found that the twin growth in the Ge epitaxial layer deposited on the Si(110) using molecular beam epitaxy at a low temperature of 200 °C can be effectively suppressed by the incorporation of 2.0% Sn. We also examined the strain relaxation of annealed Ge{sub 1−x}Sn{sub x}/Si(110) samples. The degree of strain relaxation is enhanced by the annealing process, and the threading dislocation in the Ge{sub 1−x}Sn{sub x} layers decreases from 10{sup 11} cm{sup −2} to 10{sup 10} cm{sup −2} because of the propagation of misfit dislocations. We also observed misfit dislocations formed at the Ge{sub 1−x}Sn{sub x}/Si interface, which would effectively promote isotropic strain relaxation in the Ge{sub 1−x}Sn{sub x} layers. - Highlights: • Suppression of twin in GeSn growth on Si(110) substrate • Isotropic strain relaxation of Ge and GeSn layers by misfit dislocation network • Achievement of high quality GeSn epitaxial layers on Si(110) by post deposition annealing.

  19. Growth and self-organization of SiGe nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Aqua, J.-N., E-mail: aqua@insp.jussieu.fr [Institut des Nanosciences de Paris, Université Pierre et Marie Curie Paris 6 and CNRS UMR 7588, 4 place Jussieu, 75252 Paris (France); Berbezier, I., E-mail: isabelle.berbezier@im2np.fr [Institut Matériaux Microélectronique Nanoscience de Provence, Aix-Marseille Université, UMR CNRS 6242, 13997 Marseille (France); Favre, L. [Institut Matériaux Microélectronique Nanoscience de Provence, Aix-Marseille Université, UMR CNRS 6242, 13997 Marseille (France); Frisch, T. [Institut Non Linéaire de Nice, Université de Nice Sophia Antipolis, UMR CNRS 6618, 1361 routes des Lucioles, 06560 Valbonne (France); Ronda, A. [Institut Matériaux Microélectronique Nanoscience de Provence, Aix-Marseille Université, UMR CNRS 6242, 13997 Marseille (France)

    2013-01-01

    Many recent advances in microelectronics would not have been possible without the development of strain induced nanodevices and bandgap engineering, in particular concerning the common SiGe system. In this context, a huge amount of literature has been devoted to the growth and self-organization of strained nanostructures. However, even if an overall picture has been drawn out, the confrontation between theories and experiments is still, under various aspects, not fully satisfactory. The objective of this review is to present a state-of-the-art of theoretical concepts and experimental results on the spontaneous formation and self-organization of SiGe quantum dots on silicon substrates. The goal is to give a comprehensive overview of the main experimental results on the growth and long time evolution of these dots together with their morphological, structural and compositional properties. We also aim at describing the basis of the commonly used thermodynamic and kinetic models and their recent refinements. The review covers the thermodynamic theory for different levels of elastic strain, but focuses also on the growth dynamics of SiGe quantum dots in several experimental circumstances. The strain driven kinetically promoted instability, which is the main form of instability encountered in the epitaxy of SiGe nanostructures at low strain, is described. Recent developments on its continuum description based on a non-linear analysis particularly useful for studying self-organization and coarsening are described together with other theoretical frameworks. The kinetic evolution of the elastic relaxation, island morphology and film composition are also extensively addressed. Theoretical issues concerning the formation of ordered island arrays on a pre-patterned substrate, which is governed both by equilibrium ordering and kinetically-controlled ordering, are also reported in connection with the experimental results for the fabrication technology of ordered arrays of SiGe

  20. 羅振玉日本教育考察與晚清學制制定的關係 Chen-Yu Lo’ Educational Visit to Japan and the Drafting of School Systems in Late Ch’ing

    Directory of Open Access Journals (Sweden)

    周愚文 Yu-Wen Chou

    2015-03-01

    Full Text Available 羅振玉早年關心農業與教育,曾辦東文學社教日語,出版《農報》,譯農書,故受張之洞聘請,掌湖北農務局及農學堂。1901年辛丑詔改各省書院為學堂,獲張之洞與劉坤一共薦率員考察日本教育兩個月。先後訪談重要政教人物,參訪東京、京都、奈良等地學校24所,蒐購中小學教科書及理化器材。因時短、行程緊湊及語言限制,未讀前人考察紀錄,自認收穫有限。返國後,他曾獲張之洞五次接見,並命向鄂官員講說教育。又代張之洞擬教育制度草案欲與劉督會奏,但因劉屬官反對遂寢。他遂出版訪日紀錄及資料,並發表〈學制私議〉等文建議興學,部分被鄂參採。當朝廷擬訂壬寅及癸卯學制時,羅未參與而資料只供參考,但章程規定中小學堂學科八科及小學堂以學國語為主等二項,可能與其建議有關。隨行陳毅曾譯日教育法規並兩度遊日,起草奏定章程時,當不會只憑文獻閉門造車,但主政者乏直接經驗,故教育借用日制時難盡合國情。 Chen-Yu Lo had concern about agriculture and education. He was invited by Governor-General Chih-tung Chang to preside over the Agriculture Department of Hubei and its Agriculture School. In 1901, ordered by Chang and Governor-General Kun-I Liu, he led a group of delegates to visit educational institutions in Japan. Within two months, he discussed with influential politicians and educators, visited 24 schools in Tokyo, Kyoto, and Nara, and purchased elementary and secondary school textbooks and laboratory equipments. When he returned, he had five meetings with Chang, and lectured on education for Hubei officials. On behalf of Chang, Lo had drafted a new educational system, and it was to be presented to the throne by Chang and Liu, however, the proposal was withdrawn due to the objections of Liu’s subordinates. Later, Lo made the collected

  1. 76 FR 14437 - Economic Simplified Boiling Water Reactor Standard Design: GE Hitachi Nuclear Energy; Issuance of...

    Science.gov (United States)

    2011-03-16

    ... From the Federal Register Online via the Government Publishing Office ] NUCLEAR REGULATORY COMMISSION Economic Simplified Boiling Water Reactor Standard Design: GE Hitachi Nuclear Energy; Issuance of... GE Hitachi Nuclear Energy (GEH) for the economic simplified boiling water reactor (ESBWR) standard...

  2. Room Temperature Ferromagnetic, Anisotropic, Germanium Rich FeGe(001 Alloys

    Directory of Open Access Journals (Sweden)

    Cristian M. Teodorescu

    2013-02-01

    Full Text Available Ferromagnetic FexGe1−x with x = 2%–9% are obtained by Fe deposition onto Ge(001 at high temperatures (500 °C. Low energy electron diffraction (LEED investigation evidenced the preservation of the (1 × 1 surface structure of Ge(001 with Fe deposition. X-ray photoelectron spectroscopy (XPS at Ge 3d and Fe 2p core levels evidenced strong Fe diffusion into the Ge substrate and formation of Ge-rich compounds, from FeGe3 to approximately FeGe2, depending on the amount of Fe deposited. Room temperature magneto-optical Kerr effect (MOKE evidenced ferromagnetic ordering at room temperature, with about 0.1 Bohr magnetons per Fe atom, and also a clear uniaxial magnetic anisotropy with the in-plane  easy magnetization axis. This compound is a good candidate for promising applications in the field of semiconductor spintronics.

  3. Mn-doping effects on structural and magnetic properties of Ge nanocrystals on insulator

    Science.gov (United States)

    Aouassa, M.; Zrir, M. A.; Jadli, I.; Bandyopadhyay, A. K.; Karaman, I.; Panczer, G.; Maaref, H.

    2018-01-01

    A comparison between dewetting properties of amorphous Ge and GeMn layers on SiO2, followed by a detailed study of magnetic and structural properties of GeMn nanocrystals (NCs), is done by means of several characterization techniques. The formation of three-dimensional Ge and GeMn NCs by solid-state dewetting process was evidenced by transmission electron microscopy. Studying the dewetting morphologies revealed a weak dependence on the Mn content. We show that the size of the dewetted NCs is proportional to the initial film thickness. SQUID measurements of GeMn NCs show the ferromagnetic behavior of Mn5Ge3 phase with Curie temperature at 300 K. Raman spectroscopy was performed for GeMn self-assembled NCs in order to investigate the effects of Mn-doping and the nature of the capping layer on the strain level.

  4. Ge-intercalated graphene: The origin of the p-type to n-type transition

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-09-01

    Recently huge interest has been focussed on Ge-intercalated graphene. In order to address the effect of Ge on the electronic structure, we study Ge-intercalated free-standing C 6 and C 8 bilayer graphene, bulk C 6Ge and C 8Ge, as well as Ge-intercalated graphene on a SiC(0001) substrate, by density functional theory. In the presence of SiC(0001), there are three ways to obtain n-type graphene: i) intercalation between C layers; ii) intercalation at the interface to the substrate in combination with Ge deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition occurs. © Copyright EPLA, 2012.

  5. Higgs Mass and Cross-Section Measurements at a 500 GeV CLIC Machine, Operating at sqrt(s) = 350 GeV and 500 GeV

    CERN Document Server

    Marshall, J

    2012-01-01

    Higgs mass and cross-section measurements have been examined to assess the capability of a 500 GeV CLIC machine, operating at centre-of-mass energies of 350 GeV and 500 GeV. A Higgs mass of 120 GeV and a luminosity of 500 fb−1 were assumed. Model-independent measurements were performed by examining the recoil of the Z in the Higgsstrahlung process, with the Z subsequently decaying to a pair of muons or electrons.

  6. Unexpected Ge-Ge contacts in the two-dimensional Ge{sub 4}Se{sub 3}Te phase and analysis of their chemical cause with the density of energy (DOE) function

    Energy Technology Data Exchange (ETDEWEB)

    Kuepers, Michael; Konze, Philipp M.; Maintz, Stefan; Steinberg, Simon [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Mio, Antonio M.; Cojocaru-Miredin, Oana; Zhu, Min; Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University (Germany); Mueller, Merlin; Mayer, Joachim [Gemeinschaftslabor fuer Elektronenmikroskopie, RWTH Aachen University (Germany); Luysberg, Martina [Ernst-Ruska-Center, Forschungszentrum Juelich GmbH (Germany); Dronskowski, Richard [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Juelich-Aachen Research Alliance (JARA-HPC), RWTH Aachen University (Germany)

    2017-08-14

    A hexagonal phase in the ternary Ge-Se-Te system with an approximate composition of GeSe{sub 0.75}Te{sub 0.25} has been known since the 1960s but its structure has remained unknown. We have succeeded in growing single crystals by chemical transport as a prerequisite to solve and refine the Ge{sub 4}Se{sub 3}Te structure. It consists of layers that are held together by van der Waals type weak chalcogenide-chalcogenide interactions but also display unexpected Ge-Ge contacts, as confirmed by electron microscopy analysis. The nature of the electronic structure of Ge{sub 4}Se{sub 3}Te was characterized by chemical bonding analysis, in particular by the newly introduced density of energy (DOE) function. The Ge-Ge bonding interactions serve to hold electrons that would otherwise go into antibonding Ge-Te contacts. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Li3Ge3Se6: the first ternary lithium germanium selenide with interesting ∞[Ge6Se12]n chains constructed by ethane-like [Ge2Se6]6- clusters.

    Science.gov (United States)

    Li, Guangmao; Zhen, Ni; Chu, Yu; Zhou, Zhongxiang

    2017-12-21

    Li3Ge3Se6, the first compound of the ternary Li/Ge/Se system, has been synthesized. Note that interesting 1D ∞[Ge6Se12]n chains constructed by ethane-like [Ge2Se6]6- clusters were discovered in its structure. Investigations on the structures of all the [Ge2Se6]6- cluster-containing compounds have shown that only in Li3Ge3Se6 are there 1D chains composed of [Ge2Se6]6- clusters, which result from the space limitation within the tunnels surrounded by LiSe6 octahedra. Raman spectrum was obtained to demonstrate the existence of Ge-Ge bonds. UV-visible-NIR diffuse reflection spectrum showed an optical bandgap of 2.08 eV. Theoretical calculations based on first principles have also been performed for its band structure and density of states to analyze its structure-property relationship.

  8. ⁶⁸Ge content quality control of ⁶⁸Ge/⁶⁸Ga-generator eluates and ⁶⁸Ga radiopharmaceuticals--a protocol for determining the ⁶⁸Ge content using thin-layer chromatography.

    Science.gov (United States)

    Eppard, Elisabeth; Loktionova, Natalia S; Rösch, Frank

    2014-09-01

    (68)Ge breakthrough from a (68)Ge/(68)Ga-generator appears to be one of the most critical parameters for the routine clinical application of this generator and (68)Ga-radiopharmaceuticals. We report a TLC-based (thin-layer chromatography) protocol which allows the (68)Ge breakthrough of a generator to be determined within 1 h post-initial elution. The protocol can also be adapted to allow the (68)Ge content of a (68)Ga-radiopharmaceutical preparation to be determined prior to in vivo application. Copyright © 2014 Elsevier Ltd. All rights reserved.

  9. 73Ge-Nuclear Magnetic Resonance/Nuclear Quadrupole Resonance Investigation of Magnetic Properties of URhGe

    Science.gov (United States)

    Kotegawa, Hisashi; Fukumoto, Kenta; Toyama, Toshihiro; Tou, Hideki; Harima, Hisatomo; Harada, Atsushi; Kitaoka, Yoshio; Haga, Yoshinori; Yamamoto, Etsuji; Ōnuki, Yoshichika; Itoh, Kohei M.; Haller, Eugene E.

    2015-05-01

    We report on the 73Ge-nuclear magnetic resonance (NMR)/nuclear quadrupole resonance (NQR) results for the ferromagnetic (FM) superconductor URhGe. The magnitude and direction of the internal field, Hint, and the parameters of the electric field gradient at the Ge site were determined experimentally. By using powdered polycrystalline samples oriented by different methods, the field dependences of NMR shift and nuclear spin relaxation rates for H0 || c (easy axis) and H0 || b were obtained. From the NMR shifts for H0 || b, we confirmed a gradual suppression of the Curie temperature and observed a phase separation near the spin reorientation. The observation of the phase separation gives microscopic evidence that the spin reorientation under H0 || b is of first order at low temperatures. The nuclear spin-lattice relaxation rate 1/T1 indicates that the magnetic fluctuations are suppressed for H0 || c, whereas the fluctuations remain strongly for H0 || b. The enhancements of both 1/T1T and the nuclear spin-spin relaxation rate 1/T2 for H0 || b toward the spin reorientation field suggest that the field-induced superconductivity in URhGe emerges under the magnetic fluctuations along the b- and c-axes.

  10. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    Energy Technology Data Exchange (ETDEWEB)

    Vanacore, G. M.; Zani, M.; Tagliaferri, A., E-mail: alberto.tagliaferri@polimi.it [CNISM-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Nicotra, G. [IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy); Bollani, M. [CNR-IFN, LNESS, Via Anzani 42, I-22100 Como (Italy); Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F. [Dipartimento di Scienza dei Materiali and L-NESS, Università Milano-Bicocca, via Cozzi 53, I-20125 Milano (Italy); Capellini, G. [Department of Sciences at the Università Roma Tre, Via Vasca Navale 79, 00146 Roma (Italy); Isella, G. [CNISM, LNESS, Dipartimento di Fisica, Politecnico di Milano (Polo di Como), Via Anzani 42, I-22100 Como (Italy); Osmond, J. [ICFO–The Institute of Photonic Sciences, Av. Carl Friedrich Gauss, 3, E-08860 Castelldefels (Barcelona) (Spain)

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  11. Using Ge Secondary Phases to Enhance the Power Factor and Figure of Merit of Ge17Sb2Te20

    Science.gov (United States)

    Williams, Jared B.; Morelli, Donald T.

    2017-05-01

    Thermoelectric materials are the leading candidate today for applications in solid-state waste-heat recovery/cooling applications. Research and engineering has pushed the ZT, and overall conversion efficiency, of these materials to values which can be deemed practical for commercialization. However, many of the state-of-the-art thermoelectric materials of today utilize elements which are toxic, such as Ag, Pb, Tl, and Cd. Alloys of GeTe and Sb2Te3 were first explored for their applications in phase-change memory, because of their ability to rapidly alternate between crystalline and amorphous phases. Recently, these materials have been identified as materials with ZT ( S 2 T/ ρκ, where S is the Seebeck coefficient, ρ is the electrical resistivity, T is the operating temperature, and κ is the thermal conductivity) much greater than unity. In this work, the influence of elemental Ge as a secondary phase on transport in Ge17Sb2Te20 was explored. It was found that Ge introduces an additional scattering mechanism, which leads to increased electrical resistivity, Seebeck coefficient, and power factor values as high as 36 μW cm-1 K-2. The thermal conductivity was slightly reduced and the ZT was enhanced across the entire temperature range of measurement, with peak values greater than 2.

  12. Analysis of the longitudinal collective behavior in a 50GeV×50GeV muon collider ring

    Directory of Open Access Journals (Sweden)

    Eun-San Kim

    1999-05-01

    Full Text Available Simulations of the longitudinal instability in the 50GeV×50GeV muon collider ring have been performed. Operation of the ring close to the slippage factor η_{1}≃10^{-6}, such that synchrotron motion is frozen, minimizes the need for rf to maintain the bunch length. However, there is still an energy spread due to the bunch wake. For design parameters of the ring, this induced energy is too large and must be controlled. This paper demonstrates that the bunch wake may be compensated for by two rf cavities with low rf voltages. These studies were made at the nominal design point, and sensitivities to errors were explored. It is seen that the small energy spread of the beam (δE/E=3×10^{-5} in the 50GeV×50GeV muon collider ring can be maintained during the 1000 turn lifetime of the muons. Controlled beam dynamics requires proper choice of rf parameters (rf voltage, rf frequency, and phase offset for two cavities; these parameters depend on the ring design through the impedance, beam pipe radius, and momentum compaction. The simulation also shows that the computation of wake field using bins of variable width (each with a constant number of macroparticles in each bin gives an accurate wake and also yields reduced computing time compared to an evaluation of the wake as the direct sum over the wakes of all preceding macroparticles.

  13. Luminescence of porous multicrystalline Si{sub 1-x}Ge{sub x} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Kolic, K. [Laboratoire de Physique de la Matiere, 20 avenue Albert Einstein, 69621 Villeurbanne (France); Borne, E. [Laboratoire de Physique de la Matiere, 20 avenue Albert Einstein, 69621 Villeurbanne (France); Garcia Perez, M.A. [Laboratoire de Physique de la Matiere, 20 avenue Albert Einstein, 69621 Villeurbanne (France); Sibai, A. [Laboratoire de Physique de la Matiere, 20 avenue Albert Einstein, 69621 Villeurbanne (France); Gauthier, R. [Laboratoire de Physique de la Matiere, 20 avenue Albert Einstein, 69621 Villeurbanne (France); Laugier, A. [Laboratoire de Physique de la Matiere, 20 avenue Albert Einstein, 69621 Villeurbanne (France)

    1995-01-15

    The aim of this study was to explore the possible applications of porous SiGe material in photoluminescence and electroluminescence procedures. The SiGe alloy ingots were produced using the Polix method, Ge being doped with boron. The SiGe plates were etched by anodization. The porous structures were irradiated by the 514.5nm line of a continuous wave argon laser, showing visible luminescence around 0.75{mu}m. ((orig.))

  14. Exploring the limits of (73)Ge solid-state NMR spectroscopy at ultrahigh magnetic field.

    Science.gov (United States)

    Sutrisno, Andre; Hanson, Margaret A; Rupar, Paul A; Terskikh, Victor V; Baines, Kim M; Huang, Yining

    2010-04-28

    The ultrahigh field natural abundance (73)Ge solid-state wide-line NMR study of germanium dichloride complexed with 1,4-dioxane and tetraphenylgermane yields the largest (73)Ge quadrupolar coupling constant determined by NMR spectroscopy to date and the first direct observation of (73)Ge chemical shift anisotropy.

  15. Simultaneous suppression of ferromagnetism and superconductivity in UCoGe by Si substitution

    NARCIS (Netherlands)

    de Nijs, D.E.; Huy, N.T.; de Visser, A.

    2008-01-01

    We investigate the effect of substituting Si for Ge in the ferromagnetic superconductor UCoGe. dc-magnetization, ac-susceptibility, and electrical resistivity measurements on polycrystalline UCoGe1-xSix samples show that ferromagnetic order and superconductivity are progressively depressed with

  16. Why is GeV physics relevant in the age of the LHC?

    Energy Technology Data Exchange (ETDEWEB)

    Pennington, Michael R. [JLAB

    2014-02-01

    The contribution that Jefferson Lab has made, with its 6 GeV electron beam, and will make, with its 12 GeV upgrade, to our understanding of the way the fundamental interactions work, particularly strong coupling QCD, is outlined. The physics at the GeV scale is essential even in TeV collisions.

  17. 77 FR 38714 - Proposed Collection; Comment Request for the TE/GE Compliance Check Questionnaires

    Science.gov (United States)

    2012-06-28

    ... Internal Revenue Service Proposed Collection; Comment Request for the TE/GE Compliance Check Questionnaires... 104-13 (44 U.S.C. 3506(c)(2)(A)). Currently, the IRS is soliciting comments concerning the TE/GE... INFORMATION: Title: TE/GE Compliance Check Questionnaires. OMB Number: 1545-2071. Form Number: Not applicable...

  18. 78 FR 63565 - Proposed Collection; Comment Request for the TE/GE Compliance Check Questionnaires

    Science.gov (United States)

    2013-10-24

    ... Internal Revenue Service Proposed Collection; Comment Request for the TE/GE Compliance Check Questionnaires... 104-13 (44 U.S.C. 3506(c)(2)(A)). Currently, the IRS is soliciting comments concerning the TE/GE... Internet at [email protected] . SUPPLEMENTARY INFORMATION: Title: TE/GE Compliance Check...

  19. Activation and thermal stability of ultra-shallow B+-implants in Ge

    DEFF Research Database (Denmark)

    Yates, B. R.; Darby, B. L.; Petersen, Dirch Hjorth

    2012-01-01

    The activation and thermal stability of ultra-shallow B+ implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B+ implants in Ge was char......The activation and thermal stability of ultra-shallow B+ implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B+ implants in Ge...... was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B+ implants at 2, 4, and 6 keV to fluences ranging...... from 5.0 × 1013 to 5.0 × 1015 cm-2 was studied using micro Hall effect measurements after annealing at 400-600 °C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed...

  20. 77 FR 4587 - GE Asset Management Incorporated, et al.; Notice of Application and Temporary Order

    Science.gov (United States)

    2012-01-30

    ... COMMISSION GE Asset Management Incorporated, et al.; Notice of Application and Temporary Order January 24... also have applied for a permanent order. Applicants: GE Asset Management Incorporated (``GEAM''), GE... Daniele Marchesani, Branch Chief, at (202) 551-6821 (Division of Investment Management, Office of...

  1. Epigenetic game theory and its application in plants. Comment on: ;Epigenetic game theory: How to compute the epigenetic control of maternal-to-zygotic transition; by Qian Wang et al.

    Science.gov (United States)

    Zhang, Yuan-Ming; Zhang, Yinghao; Guo, Mingyue

    2017-03-01

    Wang's et al. article [1] is the first to integrate game theory (especially evolutionary game theory) with epigenetic modification of zygotic genomes. They described and assessed a modeling framework based on evolutionary game theory to quantify, how sperms and oocytes interact through epigenetic processes, to determine embryo development. They also studied the internal mechanisms for normal embryo development: 1) evolutionary interactions between DNA methylation of the paternal and maternal genomes, and 2) the application of game theory to formulate and quantify how different genes compete or cooperate to regulate embryogenesis through methylation. Although it is not very comprehensive and profound regarding game theory modeling, this article bridges the gap between evolutionary game theory and the epigenetic control of embryo development by powerful ordinary differential equations (ODEs). The epiGame framework includes four aspects: 1) characterizing how epigenetic game theory works by the strategy matrix, in which the pattern and relative magnitude of the methylation effects on embryogenesis, are described by the cooperation and competition mechanisms, 2) quantifying the game that the direction and degree of P-M interactions over embryo development can be explained by the sign and magnitude of interaction parameters in model (2), 3) modeling epigenetic interactions within the morula, especially for two coupled nonlinear ODEs, with explicit functions in model (4), which provide a good fit to the observed data for the two sexes (adjusted R2 = 0.956), and 4) revealing multifactorial interactions in embryogenesis from the coupled ODEs in model (2) to triplet ODEs in model (6). Clearly, this article extends game theory from evolutionary game theory to epigenetic game theory.

  2. Measurement of the neutron-capture cross section of 76Ge and 74Ge below 15 MeV and its relevance to 0νββ decay searches of 76Ge

    Directory of Open Access Journals (Sweden)

    Megha Bhike

    2015-02-01

    Full Text Available The neutron radiative-capture cross section of 76Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ∼86%Ge76 and ∼14%Ge74 used in the 0νββ searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the H3(p,nHe3, H2(d,nHe3 and H3(d,nHe4 reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for 74Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution γ-ray spectroscopy was used to determine the γ-ray activity of the daughter nuclei of interest. For the 76Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the Ge74(n,γGe75 reaction, the present data are about a factor of two larger than predicted. It was found that the Ge74(n,γGe75 yield in the High-Purity Germanium (HPGe detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the Ge76(n,γGe77 yield due to the larger cross section of the former reaction.

  3. GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4

    Science.gov (United States)

    Aubin, J.; Hartmann, J. M.

    2018-01-01

    We have investigated the low temperature epitaxy of high Sn content GeSn alloys in a 200 mm industrial Reduced Pressure - Chemical Vapor Deposition tool from Applied Materials. Gaseous digermane (Ge2H6) and liquid tin tetrachloride (SnCl4) were used as the Ge and Sn precursors, respectively. The impact of temperature (in the 300-350 °C range), Ge2H6 and SnCl4 mass-flows on the GeSn growth kinetics at 100 Torr has been thoroughly explored. Be it at 300 °C or 325 °C, a linear GeSn growth rate increase together with a sub-linear Sn concentration increase occurred as the SnCl4 mass-flow increased, irrespective of the Ge2H6 mass flow (fixed or varying). The Sn atoms seemed to catalyze H desorption from the surface, resulting in higher GeSn growth rates for high SnCl4 mass-flows (in the 4-21 nm min-1 range). The evolution of the Sn content x with the F (SnCl4) 2 ·/F (Ge2H6) mass-flow ratio was fitted by x2/(1 - x) = n ·F (SnCl4) 2 ·/F (Ge2H6), with n = 0.25 (325 °C) and 0.60 (300 °C). We have otherwise studied the impact of temperature, in the 300-350 °C range, on the GeSn growth kinetics. The GeSn growth rate exponentially increased with the temperature, from 15 up to 32 nm min-1. The associated activation energy was low, i.e. Ea = 10 kcal mol-1. Meanwhile, the Sn content decreased linearly as the growth temperature increased, from 15% at 300 °C down to 6% at 350 °C.

  4. Fast Li ionic conduction in solid solutions of the system Li4GeO4-Li2ZnGeO4-Li3PO4

    NARCIS (Netherlands)

    Kamphorst, J.G.; Hellstrom, E.E.

    A wide range of solid solution formation in the Li4GeO4-Li2ZnGeO4-Li3PO4 system was observed to occur with a structure based on γII-Li3PO4. This includes the fast Li conductor lisicon (Li14Zn(GeO4)4). The ionic conductivities of solid solutions in this systems are reported. Much of the solid

  5. Impact of nitrogen plasma passivation on the Al/n-Ge contact

    Energy Technology Data Exchange (ETDEWEB)

    Lai, Shumei; Mao, Danfeng [Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); Ruan, Yujiao [Xiamen Institute of Measurement and Testing, Xiamen, Fujian 361004 (China); Xu, Yihong; Huang, Zhiwei; Huang, Wei [Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); Chen, Songyan, E-mail: sychen@xmu.edu.cn [Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); Li, Cheng; Wang, Jianyuan [Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); Tang, Dingliang [College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, Fujian 361005 (China)

    2016-09-15

    Highlights: • A thin GeO{sub x}N{sub y} layer was formed by N{sub 2} plasma. • The principal parameters of N{sub 2} plasma treatment and additional post anneal have a great impact on the Al/n-Ge contact. • A model was proposed to explain the variation of Schottky barrier height. • The GeO{sub x}N{sub y} layer was also benefit to achieve a low leakage current density for HfO{sub 2}/Ge MOS capacitors. - Abstract: Severe Fermi level pinning at the interface of metal/n-Ge leads to the formation of a Schottky barrier. Therefore, a high contact resistance is introduced, debasing the performance of Ge devices. In this study, a Ge surface was treated by nitrogen plasma to form an ultra-thin Germanium oxynitride (GeO{sub x}N{sub y}) passivation layer. It was found that the Schottky barrier height (SBH) of metal/n-Ge contact was strongly modulated by the GeO{sub x}N{sub y} interlayer, indicating alleviation of Fermi-level pinning effect. By adjusting the principal parameters of N{sub 2} plasma treatment and additional post anneal, a Quasi-ohmic Al/n-Ge contact was achieved. Furthermore, the introduced GeO{sub x}N{sub y} layer gave extremely lower leakage current density of the gate stack for HfO{sub 2}/Ge devices. These results demonstrate that GeO{sub x}N{sub y} formed by N{sub 2} plasma would be greatly beneficial to the fabrication of the Ge-based devices.

  6. Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect

    Directory of Open Access Journals (Sweden)

    Yudi Darma

    2008-03-01

    Full Text Available Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter have been prepared by controlling selective growth conditions of low-pressure chemical vapor deposition (LPCVD on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth on Ge/Si dots. Compositional mixing and the crystallinity of Si dots with Ge core as a function of annealing temperature in the range of 550-800oC has been evaluated by XPS analysis and confirms the diffusion of Ge atoms from Ge core towards the Si clad accompanied by formation of GeOx at the Si clad surface. The first subband energy at the valence band of Si dot with Ge core has been measured as an energy shift at the top of the valence band density of state using XPS. The systematic shift of the valence band maximum towards higher binding energy with progressive deposition in the dot formation indicate the charging effect of dots and SiO2 layer by photoemission during measurements.

  7. Validation of Predicted Precipitate Compositions in Al-Si-Ge

    Energy Technology Data Exchange (ETDEWEB)

    Dracup, B; Turchi, P A; Radmilovic, V; Dahmen, U; Morris, Jr., J W

    2004-04-21

    Aged alloys of Al-0.5Si-0.5Ge (at.%) contain diamond cubic (A4) precipitates in a dispersion that is much finer than is found in alloys with Si or Ge alone. To help understand this aging behavior, the present work was undertaken to determine alloy composition as a function of aging temperature. The composition was estimated theoretically using a CALPHAD approach, and measured experimentally with energy dispersive spectroscopy (EDS) in a high-resolution electron microscope. Theory and experiment are in reasonable agreement. As the aging temperature rises, the precipitates become enriched in Si, changing from 50 at. % in the low-temperature limit to about 80 at.% Si as temperature approaches 433 C, the high-temperature limit of the precipitate field.

  8. Hole spin coherence in a Ge/Si heterostructure nanowire

    DEFF Research Database (Denmark)

    Higginbotham, Andrew P; Larsen, Thorvald Wadum; Yao, Jun

    2014-01-01

    Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnit......Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order...

  9. GeSbTe deposition for the PRAM application

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Junghyun [Nano Fabrication Center, SAIT, Suwon, P.O. Box 111 (Korea, Republic of); Choi, Sangjoon [Nano Fabrication Center, SAIT, Suwon, P.O. Box 111 (Korea, Republic of); Lee, Changsoo [Nano Fabrication Center, SAIT, Suwon, P.O. Box 111 (Korea, Republic of); Kang, Yoonho [Nano Fabrication Center, SAIT, Suwon, P.O. Box 111 (Korea, Republic of); Kim, Daeil [School of Materials Science and Engineering. University of Ulsan, San 29, Mugeo-Dong, Nam-Gu, Ulsan 680-749 (Korea, Republic of)]. E-mail: dkim84@mail.ulsan.ac.kr

    2007-02-15

    GeSbTe (GST) chalcogenide thin films for the phase-change random access memory (PRAM) were deposited by an atomic layer deposition (ALD) process. New precursors for GST thin films made with an ALD process were synthesized. Among the synthesized precursors, Ge(N(CH{sub 3}){sub 2}){sub 4}, Sb(N(CH{sub 3}){sub 2}){sub 4}, and Te(i-Pr){sub 2} (i-Pr = iso-propyl) were selected. Using the above precursors, GST thin films were deposited using an H{sub 2} plasma-assisted ALD process. Film resistivity abruptly changed after an N{sub 2} annealing process above a temperature of 350 deg. C. Cross-sectional scanning electron microscope (SEM) photographs of the GST films on the patterned substrate with aspect ratio of 7 shows that the step coverage is about 90%.

  10. Ge/Si core/multi shell heterostructure FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

    2010-01-01

    Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

  11. High speed MSM photodetector based on Ge nanowires network

    Science.gov (United States)

    Dhyani, Veerendra; Das, Samaresh

    2017-05-01

    This paper presents the photoresponse characteristics of a high speed Ge nanowires (NWs) network metal-semiconductor-metal photodetector. Ge NWs with different diameters (30 nm-100 nm) were grown by a vapour-liquid-solid method on SiO2/Si (100) wafers. Responsivity up to 1.75 A W-1 has been observed for a 30 nm NWs device compared to 0.5 A W-1 for a 100 nm NWs detector. A large population of surface states results in higher responsivity in a smaller diameter NWs device. The high gain in photocurrent has been explained using back-to-back Schottky junctions in a NWs network. The 30 nm NWs detector shows a fast photoresponse with a rise time of 95 μs and a fall time of 100 μs. The observed diameter-dependent time response in network NWs devices has been explained using barrier-dominant photo-conductance.

  12. DFT study on (La,Ce)TiGe{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Foerster, Tobias; Grasemann, Jacob; Uhlarz, Marc; Wosnitza, Jochen [Hochfeld-Magnetlabor Dresden (HLD), Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden (Germany); Rosner, Helge; Stockert, Oliver [Max-Planck-Institut fuer Chemische Physik fester Stoffe, 01187 Dresden (Germany); Kittler, Wolfram; Loehneysen, Hilbert von [Karlsruher Institut fuer Technologie, 76049 Karlsruhe (Germany); Fritsch, Veronika [Karlsruher Institut fuer Technologie, 76049 Karlsruhe (Germany); Institut fuer Physik, Universitaet Augsburg, 86135 Augsburg (Germany)

    2015-07-01

    CeTiGe{sub 3} presents the rare case of a ferromagnetically (T{sub C} ∼ 14 K) ordered Kondo-lattice compound and is probably the first known example of an intermetallic hexagonal perovskite of the BaNiO{sub 3} structure type. LaTiGe{sub 3} is the nonmagnetic analogue. To clarify the interplay between structural, localized, and itinerant degrees of freedom an accurate knowledge of the electronic band structure is necessary. Here, we present detailed comparative electronic structure calculations for both compounds. Applying full potential density functional calculations in different approximations, we attempt to separate the influence of different parameters of the crystal structure on the topology and character of the respective Fermi surfaces. We compare our calculated results with de Haas-van Alphen measurements.

  13. First measurement of {sup 60}Ge β-decay

    Energy Technology Data Exchange (ETDEWEB)

    Ciemny, A.A.; Dominik, W.; Janas, Z.; Kuich, M.; Mazzocchi, C.; Miernik, K.; Pfuetzner, M.; Pomorski, M.; Cwiok, M.; Korgul, A. [University of Warsaw, Faculty of Physics, Warsaw (Poland); Ginter, T.; Bazin, D.; Baumann, T.; Crider, B.P.; Kwan, E.; Pereira, J.; Sumithrarachchi, C. [Michigan State University, National Superconducting Cyclotron Laboratory, East Lansing, MI (United States); Grzywacz, R. [University of Tennessee, Department of Physics and Astronomy, Knoxville, TN (United States); Oak Ridge National Laboratory, Oak Ridge, TN (United States); Bezbakh, A. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Go, S.; Kolos, K.; Xiao, Y. [University of Tennessee, Department of Physics and Astronomy, Knoxville, TN (United States); Kaminski, G. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Institute of Nuclear Physics PAN, Cracow (Poland); Liddick, S.N. [Michigan State University, National Superconducting Cyclotron Laboratory, East Lansing, MI (United States); Michigan State University, Department of Chemistry, East Lansing, MI (United States); Paulauskas, S.V. [Michigan State University, National Superconducting Cyclotron Laboratory, East Lansing, MI (United States); University of Tennessee, Department of Physics and Astronomy, Knoxville, TN (United States); Rykaczewski, K.P. [Oak Ridge National Laboratory, Oak Ridge, TN (United States)

    2016-04-15

    The N = 28 isotone {sup 60}Ge, T{sub z} = -2, was produced and selected among the products of the fragmentation reaction of a {sup 78}Kr beam at 150 MeV/nucleon and a Be target by means of the A1900 fragment separator at the National Superconducting Cyclotron Laboratory (NSCL) at Michigan State University (MSU). Its decay was studied for the first time using the optical time projection chamber. The β-decay of {sup 60}Ge was found to be dominated by β-delayed proton emission, with a branching of ∼ 100 % and half-life T{sub 1/2} = 20{sub -5}{sup +7} ms. (orig.)

  14. Simulations of the dislocation array at Ge/Si interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Kaplan, T.; Chisholm, M.F.; Mostoller, M.

    1993-12-01

    When Ge is grown epitaxially on Si(001), the 4% mismatch between the lattice parameters of Ge and Si can produce a regular two-dimensional grid of (a/2) [1,{plus_minus}1,0] edge dislocations at the interface, a checkerboard with a spacing of {approximately} 100 {Angstrom}. We have performed classical molecular dynamical simulations of this checkboard in large microcrystals. Results show the expected 5-fold plus 7-fold ring structure at the cores of the individual dislocations, and a new closed symmetric structure of 18 atoms at their intersections. Tetrahedral coordination is everywhere retained, with relatively small changes in the bond lengths of less than 10 and in the bond angles of less than 25%. The energetics and dislocation offset of the system are explored for the Stillinger-Weber and Tersoff potentials.

  15. Nucleon Form Factors above 6 GeV

    Science.gov (United States)

    Taylor, R. E.

    1967-09-01

    This report describes the results from a preliminary analysis of an elastic electron-proton scattering experiment... . We have measured cross sections for e-p scattering in the range of q{sup 2} from 0.7 to 25.0 (GeV/c){sup 2}, providing a large region of overlap with previous measurements. In this experiment we measure the cross section by observing electrons scattered from a beam passing through a liquid hydrogen target. The scattered particles are momentum analyzed by a magnetic spectrometer and identified as electrons in a total absorption shower counter. Data have been obtained with primary electron energies from 4.0 to 17.9 GeV and at scattering angles from 12.5 to 35.0 degrees. In general, only one measurement of a cross section has been made at each momentum transfer.

  16. Proton-proton Scattering Above 3 GeV/c

    Energy Technology Data Exchange (ETDEWEB)

    A. Sibirtsev, J. Haidenbauer, H.-W. Hammer S. Krewald ,Ulf-G. Meissner

    2010-01-01

    A large set of data on proton-proton differential cross sections, analyzing powers and the double-polarization parameter A{sub NN} is analyzed employing the Regge formalism. We find that the data available at proton beam momenta from 3 GeV/c to 50 GeV/c exhibit features that are very well in line with the general characteristics of Regge phenomenology and can be described with a model that includes the {rho}, {omega}, f{sub 2}, and a{sub 2} trajectories and single-Pomeron exchange. Additional data, specifically for spin-dependent observables at forward angles, would be very helpful for testing and refining our Regge model.

  17. Giant Seebeck effect in Ge-doped SnSe.

    Science.gov (United States)

    Gharsallah, M; Serrano-Sánchez, F; Nemes, N M; Mompeán, F J; Martínez, J L; Fernández-Díaz, M T; Elhalouani, F; Alonso, J A

    2016-06-02

    Thermoelectric materials may contribute in the near future as new alternative sources of sustainable energy. Unprecedented thermoelectric properties in p-type SnSe single crystals have been recently reported, accompanied by extremely low thermal conductivity in polycrystalline samples. In order to enhance thermoelectric efficiency through proper tuning of this material we report a full structural characterization and evaluation of the thermoelectric properties of novel Ge-doped SnSe prepared by a straightforward arc-melting method, which yields nanostructured polycrystalline samples. Ge does not dope the system in the sense of donating carriers, yet the electrical properties show a semiconductor behavior with resistivity values higher than that of the parent compound, as a consequence of nanostructuration, whereas the Seebeck coefficient is higher and thermal conductivity lower, favorable to a better ZT figure of merit.

  18. Itinerant Magnetism in Metallic CuFe2Ge2

    Science.gov (United States)

    Shanavas, K. V.; Singh, David J.

    2015-01-01

    Theoretical calculations are performed to understand the electronic structure and magnetic properties of CuFe2Ge2. The band structure reveals large electron density N(EF) at the Fermi level suggesting a strong itinerant character of magnetism. The Fermi surface is dominated by two dimensional sheet like structures, with potentially strong nesting between them. The magnetic ground state appears to be ferromagnetic along a and antiferromagnetic in other directions. These results show that CuFe2Ge2 is an antiferromagnetic metal, with similarities to the Fe-based superconductors; such as magnetism with substantial itinerant character and coupling between magnetic order and electrons at the Fermi energy. PMID:25807140

  19. Manufacturability and applications of SiGe HBT technology

    Science.gov (United States)

    Sunderland, D. A.; Ahlgren, D. C.; Gilbert, M. M.; Jeng, S.-J.; Malinowski, J. C.; Nguyen-Ngoc, D.; Schonenberg, K. T.; Stein, K. J.; Meyerson, B. S.; Harame, D. L.

    1997-10-01

    This article reviews the status of IBM's SiGe HBT technology, with a focus on manufacturability issues and circuit applications. Device design and process integration issues which have driven the development of the technology are discussed. Device results are shown, emphasizing the demonstration of reproducibility and yield in the manufacturing environment. Reproducibility of parameters for the 47/65 GHz (f T/ fMAX) SiGe HBT is shown to be superior to that of BJTs in state-of-the-art implanted-base processes. Recent circuit results, covering the performance range from 1 to 23 GHz, are reviewed. The addition of a polyimide/gold backend process for low-loss inductors and transmission lines is key to MMIC applications operating at 12 GHz and above.

  20. Abelian Hidden Sectors at a GeV

    Energy Technology Data Exchange (ETDEWEB)

    Morrissey, David E.; Poland, David; /Harvard U.; Zurek, Kathryn; /Fermilab /Michigan U.

    2009-04-16

    We discuss mechanisms for naturally generating GeV-scale hidden sectors in the context of weak-scale supersymmetry. Such low mass scales can arise when hidden sectors are more weakly coupled to supersymmetry breaking than the visible sector, as happens when supersymmetry breaking is communicated to the visible sector by gauge interactions under which the hidden sector is uncharged, or if the hidden sector is sequestered from gravity-mediated supersymmetry breaking. We study these mechanisms in detail in the context of gauge and gaugino mediation, and present specific models of Abelian GeV-scale hidden sectors. In particular, we discuss kinetic mixing of a U(1){sub x} gauge force with hypercharge, singlets or bi-fundamentals which couple to both sectors, and additional loop effects. Finally, we investigate the possible relevance of such sectors for dark matter phenomenology, as well as for low- and high-energy collider searches.

  1. Photometric techniques, performance and PSF characterization of GeMS

    Science.gov (United States)

    Turri, Paolo; McConnachie, Alan W.; Stetson, Peter B.; Andersen, David R.; Véran, Jean-Pierre; Fiorentino, Giuliana; Massari, Davide

    2016-07-01

    GeMS is the multi-conjugate adaptive optics instrument at the Gemini South telescope in Chile, the first facility-class MCAO system and the first to use laser guide stars. During its science verification period we have observed the Galactic globular cluster NGC 1851 and here we discuss the optimization of the analysis techniques that we adopt to extract science-ready photometric measurements. We use the large number of stars in the field of view to determine with high accuracy the PSF model for the profile fitting photometry. Understanding the correct techniques not only has proven useful with GeMS data but will be valuable on the next generation of Extremely Large Telescopes, where MCAO will be a central technology.

  2. Aluminum induced crystallization of amorphous Ge thin films on insulating substrate

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ch. Kishan, E-mail: kisn@igcar.gov.in; Tah, T.; Sunitha, D. T.; Polaki, S. R.; Madapu, K. K.; Ilango, S.; Dash, S.; Tyagi, A. K. [Surface and Nanoscience Division, Indira Gandhi centre for Atomic Research, Kalpakkam – 603102 (India)

    2016-05-23

    Aluminium (metal) induced crystallization of amorphous Ge in bilayer and multilayer Ge/Al thin films deposited on quartz substrate at temperature well below the crystallization temperature of bulk Ge is reported. The crystallization of poly-Ge proceeds via formations of dendritic crystalline Ge grains in the Al matrix. The observed phases were characterized by Raman spectroscopy and X-ray diffraction. The microstructure of Al thin film layer was found to have a profound influence on such crystallization process and formation of dendritic grains.

  3. Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C

    National Research Council Canada - National Science Library

    Storozhevykh, Mikhail S; Arapkina, Larisa V; Yuryev, Vladimir A

    2015-01-01

    .... The experiment has demonstrated that the Ge/Si(001) film formed in the conditions of an isolated system consists of the standard patched wetting layer and large droplike clusters of Ge rather than of huts or domes which appear when a film is grown...

  4. Evidence for dark matter modulation in CoGeNT?

    Energy Technology Data Exchange (ETDEWEB)

    Arina, Chiara; Wong, Yvonne Y.Y. [Institut für Theoretische Teilchenphysik und Kosmologie, RWTH Aachen, 52056 Aachen (Germany); Hamann, Jan [Department of Physics and Astronomy, University of Aarhus, Ny Munkegade, 8000 Aarhus C (Denmark); Trotta, Roberto, E-mail: chiara.arina@physik.rwth-aachen.de, E-mail: hamann@phys.au.dk, E-mail: r.trotta@imperial.ac.uk, E-mail: yvonne.wong@physik.rwth-aachen.de [Astrophysics Group, Imperial College London, Blackett Laboratory, Prince Consort Road, London SW7 2AZ (United Kingdom)

    2012-03-01

    We investigate the question of whether the recent modulation signal claimed by CoGeNT is best explained by the dark matter (DM) hypothesis from a Bayesian model comparison perspective. We consider five phenomenological explanations for the data: no modulation signal, modulation due to DM, modulation due to DM compatible with the total CoGeNT rate, and a signal coming from other physics with a free phase but annual period, or with a free phase and a free period. In each scenario, we assign to the free parameters physically motivated priors. We find that while the DM models are weakly preferred to the no modulation model, but when compared to models where the modulation is due to other physics, the DM hypothesis is favoured with odds ranging from 185:1 to 560:1. This result is robust even when astrophysical uncertainties are taken into account and the impact of priors assessed. Interestingly, the odds for the DM model in which the modulation signal is compatible with the total rate against a DM model in which this prior is not implemented is only 5:8, in spite of the former's prediction of a modulation amplitude in the energy range 0.9 → 3.0 keVee that is significantly smaller than the value observed by CoGeNT. Classical hypothesis testing also rules out the null hypothesis of no modulation at the 1.6σ to 2.3σ level, depending on the details of the alternative. Lastly, we investigate whether anisotropic velocity distributions can help to mitigate the tension between the CoGeNT total and modulated rates, and find encouraging results.

  5. Numerical simulation of microstructure of the GeSi alloy

    Energy Technology Data Exchange (ETDEWEB)

    Rasin, I.

    2006-09-08

    The goal of this work is to investigate pattern formation processes on the solid-liquid interface during the crystal growth of GeSi. GeSi crystals with cellular structure have great potential for applications in -ray and neutron optics. The interface patterns induce small quasi-periodic distortions of the microstructure called mosaicity. Existence and properties of this mosaicity are important for the application of the crystals. The properties depend on many factors; this dependence, is currently not known even not qualitatively. A better understanding of the physics near the crystal surface is therefore required, in order to optimise the growth process. There are three main physical processes in this system: phase-transition, diffusion and melt flow. Every process is described by its own set of equations. Finite difference methods and lattice kinetic methods are taken for solving these governing equations. We have developed a modification of the kinetic methods for the advectiondiffusion and extended this method for simulations of non-linear reaction diffusion equations. The phase-field method was chosen as a tool for describing the phase-transition. There are numerous works applied for different metallic alloys. An attempt to apply the method directly to simulation GeSi crystal growth showed that this method is unstable. This instability has not been observed in previous works due to the much smaller scale of simulations. We introduced a modified phase-field scheme, which enables to simulate pattern formation with the scale observed in experiment. A flow in the melt was taken in to account in the numerical model. The developed numerical model allows us to investigate pattern formation in GeSi crystals. Modelling shows that the flow near the crystal surface has impact on the patterns. The obtained patterns reproduce qualitatively and in some cases quantitatively the experimental results. (orig.)

  6. Temperature Sensor Based on Ge-Doped Microstructured Fibers

    Directory of Open Access Journals (Sweden)

    Salvador Torres-Peiró

    2009-01-01

    Full Text Available The fundamental mode cutoff properties of Ge-doped microstructured fibers, filled with a liquid, permit the implementation of wavelength- and amplitude-encoded temperature sensors with an ultra-high sensitivity. The cutoff wavelength changes with temperature, and the thermo-optic coefficient of the liquid determines the sensitivity of the sensor. Sensitivity as high as 25 nm/∘C is reported. In addition, simple amplitude interrogation techniques can be implemented using the same sensor heads.

  7. Neutrinoless double beta decay searches with 76Ge

    CERN Multimedia

    CERN. Geneva

    2017-01-01

    The search for neutrinoless double beta decay might be the only window to observe lepton number violation. Its observation would favour the leptogenesis mechanism for the explanation of the baryon asymmetry of the universe and is therefore considered to be of highest relevance. The isotope 76Ge has historically been most important for this search and the ongoing experiment GERDA has the lowest background of all experiments in the field. The talk reviews the motivation, the current status of experiments and future programs.

  8. GeSn/Si Avalanche Photodetectors on Si substrates

    Science.gov (United States)

    2016-09-16

    whole device structure will be grown by a unique home-built Ultra-high vacuum Chemical Vapor Deposition (UHV- CVD) machine. The detailed problems... avalanche photodiode (APD): The GeSn APD with separate absorption-charge-multiplication (SACM) structure was grown and characterized. The design took... Avalanche photo diode Avalanche photo diode (APD) based on Separate Absorption-Charge-Multiplication (SACM) structure has been fabicated. The

  9. Studien zur Mehrsprachigkeit: Beiträge der Dortmunder Arbeitsgruppe

    OpenAIRE

    Ritterfeld, Ute; Lüke, Carina; Starke, Anja; Lüke, Timo; Subellok, Katja

    2013-01-01

    An der TU Dortmund, Fachgebiet Sprache und Kommunikation, wurden in den letzten zwei Jahren eine Reihe von empirischen Studien zum Thema Mehrsprachigkeit in Kindheit und Jugend durchgeführt. Mit dem vorliegenden Beitrag geben wir einen Überblick über die wichtigsten Fragestellungen und Ergebnisse, die (auch) für die sprachtherapeutische Praxis relevant sind. Dabei werden zum einen Aspekte des Phänomens diskutiert und zum anderen konkrete Vorschläge zu Anamnese, Diagnostik und Intervention...

  10. Formation of porous Ge using HF-based electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Flamand, Giovanni; Poortmans, Jef [Microsystems, Components and Packaging Division, IMEC vzw, Kapeldreef 75, 3001 Leuven (Belgium); Dessein, Kristof [Umicore Electro-Optic Materials, Watertorenstraat 33, 2250 Olen (Belgium)

    2005-06-01

    We have performed an extensive study of the porosification of germanium by anodization in HF-based electrolytes. Both n- and p-doped Ge substrates (with varying doping levels) were used, as well as different electrolyte concentrations, anodization currents and times. We will review the conclusions we were able to draw from this series of experiments. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Surfactant mediated slurry formulations for Ge CMP applications

    KAUST Repository

    Basim, G. Bahar

    2013-01-01

    In this study, slurry formulations in the presence of self-assembled surfactant structures were investigated for Ge/SiO2 CMP applications in the absence and presence of oxidizers. Both anionic (sodium dodecyl sulfate-SDS) and cationic (cetyl trimethyl ammonium bromide-C12TAB) micelles were used in the slurry formulations as a function of pH and oxidizer concentration. CMP performances of Ge and SiO2 wafers were evaluated in terms of material removal rates, selectivity and surface quality. The material removal rate responses were also assessed through AFM wear rate tests to obtain a faster response for preliminary analyses. The surfactant adsorption characteristics were studied through surface wettability responses of the Ge and SiO2 wafers through contact angle measurements. It was observed that the self-assembled surfactant structures can help obtain selectivity on the silica/germanium system at low concentrations of the oxidizer in the slurry. © 2013 Materials Research Society.

  12. 1 - 100 GeV Emission from Millisecond Pulsars

    Science.gov (United States)

    Harding, Alice K.

    2005-01-01

    A number of rotation-powered millisecond pulsars are powerful sources of high-energy emission, detected so far at X-ray wavelengths. We present predictions for the spectral characteristics of these sources at gamma-ray energies, using a model for acceleration and pair cascades on open magnetic field lines above the polar caps. Although these pulsars have low surface magnetic fields, their short periods allow them to have large magnetospheric potential drops, but the majority do not produce sufficient pairs to completely screen the accelerating electric field. In these sources, the primary and secondary electrons continue to accelerate to high altitude and their Lorentz factors are limited by curvature and synchrotron radiation reaction. The resulting radiation above 1 GeV comes from curvature radiation by primary electrons with radiation-reaction-limited Lorentz factors. The spectra are very hard power-laws with exponential cutoffs between 1 and 50 GeV, and the spectral power peaks near the cutoff energy. Millisecond pulsars are thus ideal targets for air-Cherenkov detectors that are able to reach energy thresholds below 50 GeV.

  13. Analysis of Si/SiGe Heterostructure Solar Cell

    Directory of Open Access Journals (Sweden)

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  14. Elevated transition temperature in Ge doped VO2 thin films

    Science.gov (United States)

    Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

    2017-07-01

    Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

  15. Electronic properties of Fibonacci and random Si-Ge chains

    Energy Technology Data Exchange (ETDEWEB)

    Vasconcelos, M S [Escola de Ciencias e Tecnologia, Universidade Federal do Rio Grande do Norte, 59072-970 Natal-RN (Brazil); Azevedo, David L; Hadad, A [Departamento de Fisica, Universidade Federal do Maranhao 65080-040, Sao LuIs-MA (Brazil); Galvao, D S, E-mail: mvasconcelos@ect.ufrn.br [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas CP 6165, 13083-970 Campinas, SP (Brazil)

    2011-10-12

    In this paper we address a theoretical calculation of the electronic spectra of an Si-Ge atomic chain that is arranged in a Fibonacci quasi-periodic sequence, by using a semi-empirical quantum method based on the Hueckel extended model. We apply the Fibonacci substitutional sequences in the atomic building blocks A(Si) and B(Ge) through the inflation rule or a recursion relation. In our ab initio calculations we use only a single point, which is sufficient for considering all the orbitals and charge distribution across the entire system. Although the calculations presented here are more complete than the models adopted in the literature which take into account the electronic interaction only up to the second and third neighbors, an interesting property remains in their electronic spectra: the fractality (which is the main signature of this kind of system). We discuss this fractality of the spectra and we compare them with the random arrangement of the Si-Ge atomic chain, and with previous results based on the tight-binding approximation of the Schroedinger equation considering up to the nearest neighbor. (paper)

  16. Ge Hong. Famous Daoist Thinker & Practical Martial Artist

    Directory of Open Access Journals (Sweden)

    Stanley E. Henning

    2012-07-01

    Full Text Available Ge Hong (284-363 CE was an important intellectual figure of his time. He is known primarily for his interest in Daoist pursuits, including alchemy, as discussed in his writings titled One Who Embraces Simplicity (Baopuzi. However, the fact that he was also a military officer, who had practiced several weapons styles and who provides valuable insights into Chinese martial arts practices, has generally been ignored. This short article will attempt to outline Ge Hong’s contributions to our understanding of the role of martial arts in Chinese culture and society based on his personal experience and observations. Ge Hong viewed the martial arts as practical skills related to hunting (archery and self-defense, not Daoist pursuits, and he mentions that some of these skills could even be seen in children’s play. His reference to Cao Pi (Emperor of Wei, 220-226 CE sparring with General Deng Zhan reflects the place of martial arts among leadership in the political military system of early imperial China (206 BCE-960 CE. His explanation of oral formulas (koujue is indicative of the secrecy maintained by martial artists concerning individual techniques. 

  17. From X-Rays to MRI: Physics in GE

    Science.gov (United States)

    Schmitt, Roland W.

    2004-03-01

    The GE Research Laboratory, founded in 1900, became the first laboratory of scientific research in U.S. industry. William Coolidge, a physicist, joined the laboratory in 1905 and produced two advances of immense importance. The first, ductile tungsten, is still the heart of every incandescent light bulb. The second, the "Coolidge" X-Ray tube, remains an essential tool of modern medicine. In the process, Coolidge explored two main approaches of physics in industry. One addresses a commercial problem or opportunity (better light bulbs) and finds interesting physics. The other explores interesting physics (X-rays) and creates a commercial opportunity. This paper addresses the mix of these approaches during GE's years as an "electric" (and therefore physics-based) company. Episodes include the following: the work of Irving Langmuir (1932 Nobel laureate in chemistry, but as much physicist as chemist); the post-World War II "golden age of industrial physics" when the endless frontier offered opportunities from nuclear power to diamond making to superconductivity; the Nobel-prize winning work of Ivar Giaever; and interdisciplinary efforts that enabled GE to become a world business leader in two medical diagnostic technologies it did not invent: computed tomography and magnetic resonance imaging. I will speculate on whether this mix of problem-driven and opportunity-driven effort is as relevant to the 21st century as it was to the 20th.

  18. Quantum confinement in Si and Ge nanostructures: Theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Barbagiovanni, Eric G., E-mail: santino.gasparo@gmail.com [Laboratory for Simulation of Physical Systems, Beijing Computational Science Research Centre, Beijing 100084 (China); Lockwood, David J. [National Research Council, Ottawa, Ontario K1A 0R6 (Canada); Simpson, Peter J.; Goncharova, Lyudmila V. [Department of Physics and Astronomy, University of Western Ontario, London, Ontario N6A 3K7 (Canada)

    2014-03-15

    The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO{sub 2}, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si{sub 3}N{sub 4} and Al{sub 2}O{sub 3}. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.

  19. Axial Ge/Si nanowire heterostructure tunnel FETs.

    Energy Technology Data Exchange (ETDEWEB)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

  20. Exclusive processes at JLab at 6 GeV

    Directory of Open Access Journals (Sweden)

    Kim Andrey

    2015-01-01

    Full Text Available Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS and Deeply Virtual Meson Production (DVMP have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for π0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and −t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs model. Successful description of the recent CLAS π0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

  1. Density functional investigation of structural, electronic and optical properties of Ge-doped ZnO

    Science.gov (United States)

    Lv, Ying-bo; Dai, Ying; Yang, Kesong; Zhang, Zhenkui; Wei, Wei; Guo, Meng; Huang, Baibiao

    2011-10-01

    Recent experiments reported fascinating phenomenon of photoluminescence (PL) blueshift in Ge-doped ZnO. To understand it, we examined the structural, electronic and optical properties of Ge-doped ZnO (ZnO:Ge) systematically by means of density functional theory calculations. Our results show that Ge atoms tend to cluster in heavily doped ZnO. Ge clusters can limit the conductivity of doped ZnO but reinforce the near-band-edge emission. The substitutional Ge for Zn leads to Fermi level pinning in the conduction band, which indicates Ge-doped ZnO is of n-type conductivity character. It is found that the delocalized Ge 4s states hybridize with conduction band bottom, and is dominant in the region near the Fermi level, suggesting that Ge-4s states provides major free carriers in ZnO:Ge crystal. The observed blueshift of PL in Ge-doped ZnO originates from the electron transition energy from the valence band to the empty levels above Fermi level larger than the gap of undoped ZnO. The electron transition between the gap states induced by oxygen vacancy and conduction band minimum may be the origin of the new PL peak at 590 nm.

  2. Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Talochkin, A. B., E-mail: tal@isp.nsc.ru [A. V. Rzhanov Institute of Semiconductor Physics, Lavrentyev Avenue 13, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Mashanov, V. I. [A. V. Rzhanov Institute of Semiconductor Physics, Lavrentyev Avenue 13, Novosibirsk 630090 (Russian Federation)

    2014-12-29

    GeSn alloys grown on Si(100) by the low-temperature (100 °C) molecular beam epitaxy are studied using scanning tunneling microscopy and Raman spectroscopy. It is found that the effect of Sn as a surfactant modifies substantially the low-temperature growth mechanism of Ge on Si. Instead of the formation of small Ge islands surrounded by amorphous Ge, in the presence of Sn, the growth of pure Ge islands appears via the Stranski-Krastanov growth mode, and a partially relaxed Ge{sub 1−x}Sn{sub x} alloy layer with the high Sn-fraction up to 40 at. % is formed in the area between them. It is shown that the observed growth mode induced by high surface mobility of Sn and the large strain of the pseudomorphic state of Ge to Si ensures the minimum elastic-strain energy of the structure.

  3. Process modules for GeSn nanoelectronics with high Sn-contents

    Science.gov (United States)

    Schulte-Braucks, C.; Glass, S.; Hofmann, E.; Stange, D.; von den Driesch, N.; Hartmann, J. M.; Ikonic, Z.; Zhao, Q. T.; Buca, D.; Mantl, S.

    2017-02-01

    This paper systematically studies GeSn n-FETs, from individual process modules to a complete device. High-k gate stacks and NiGeSn metallic contacts for source and drain are characterized in independent experiments. To study both direct and indirect bandgap semiconductors, a range of 0-14.5 at.% Sn-content GeSn alloys are investigated. Special emphasis is placed on capacitance-voltage (C-V) characteristics and Schottky-barrier optimization. GeSn n-FET devices are presented including temperature dependent I-V characteristics. Finally, as an important step towards implementing GeSn in tunnel-FETs, negative differential resistance in Ge0.87Sn0.13 tunnel-diodes is demonstrated at cryogenic temperatures. The present work provides a base for further optimization of GeSn FETs and novel tunnel FET devices.

  4. Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source

    Science.gov (United States)

    Vanacore, G. M.; Zani, M.; Bollani, M.; Bonera, E.; Nicotra, G.; Osmond, J.; Capellini, Giovanni; Isella, G.; Tagliaferri, A.

    2014-04-01

    In this paper we experimentally study the growth of self-assembled SiGe islands formed on Si(001) by exploiting the thermally activated surface diffusion of Ge atoms from a local Ge source stripe in the temperature range 600-700 °C. This new growth strategy allows us to vary continuously the Ge coverage from 8 to 0 monolayers as the distance from the source increases, and thus enables the investigation of the island growth over a wide range of dynamical regimes at the same time, providing a unique birds eye view of the factors governing the growth process and the dominant mechanism for the mass collection by a critical nucleus. Our results give experimental evidence that the nucleation process evolves within a diffusion limited regime. At a given annealing temperature, we find that the nucleation density depends only on the kinetics of the Ge surface diffusion resulting in a universal scaling distribution depending only on the Ge coverage. An analytical model is able to reproduce quantitatively the trend of the island density. Following the nucleation, the growth process appears to be driven mainly by short-range interactions between an island and the atoms diffusing within its vicinities. The islands volume distribution is, in fact, well described in the whole range of parameters by the Mulheran’s capture zone model. The complex growth mechanism leads to a strong intermixing of Si and Ge within the island volume. Our growth strategy allows us to directly investigate the correlation between the Si incorporation and the Ge coverage in the same experimental conditions: higher intermixing is found for lower Ge coverage. This confirms that, besides the Ge gathering from the surface, also the Si incorporation from the substrate is driven by the diffusion kinetics, thus imposing a strict constraint on the initial Ge coverage, its diffusion properties and the final island volume

  5. Structural and magnetic properties of Ni nanofilms on Ge(001) by molecular beam epitaxy

    Science.gov (United States)

    Bocirnea, Amelia Elena; Costescu, Ruxandra Maria; Pasuk, Iuliana; Lungu, George Adrian; Teodorescu, Cristian Mihail

    2017-12-01

    Ni films of 20 nm nominal thickness were grown on Ge(001) substrates by molecular beam epitaxy at several different temperatures from room temperature up to 400 °C. X-ray diffraction and X-ray photoelectron spectroscopy reveal the nucleation of Ni-Ge compounds (NiGe, Ni2Ge, Ni5Ge2) as well as a departure from the fcc Ni structure exhibited by the films at and beyond a temperature of 100 °C. The binding energy of the Ni 2p peak increases from the RT value (852.7 eV) by 0.5-1.1 eV for the Ni/Ge(001) samples, while the Ge 2p binding energy changes by 0.6-0.7 eV after Ni growth compared to a clean Ge(001) substrate (there is only a ±0.15 eV shift among the samples grown on substrates at higher temperatures). By increasing substrate temperature, we obtained higher intermixing of Ni and Ge, but rather than both Ni and Ge interdiffusing, we find that Ni diffuses further into the germanium with higher substrate temperature, forming increasingly Ni-rich Ni-Ge compounds diluted into the Ge matrix. Based on Magneto-optic Kerr Effect measurements, Ni/Ge(001) grown on substrates at 100 and 200 °C does not exhibit a hysteresis loop, while the samples on 300 and 400 °C substrates show magnetic behavior, which we attribute to the magnetic character of hexagonal Ni5Ge2 (which is determined here for the first time to be a ferromagnetic phase).

  6. Multiple collision effects on the antiproton production by high energy proton (100 GeV - 1000 GeV)

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Hiroshi; Powell, J.

    1987-01-01

    Antiproton production rates which take into account multiple collision are calculated using a simple model. Methods to reduce capture of the produced antiprotons by the target are discussed, including geometry of target and the use of a high intensity laser. Antiproton production increases substantially above 150 GeV proton incident energy. The yield increases almost linearly with incident energy, alleviating space charge problems in the high current accelerator that produces large amounts of antiprotons.

  7. Templated self-assembly of SiGe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dais, Christian

    2009-08-19

    This PhD thesis reports on the fabrication and characterization of exact aligned SiGe quantum dot structures. In general, SiGe quantum dots which nucleate via the Stranski-Krastanov growth mode exhibit broad size dispersion and nucleate randomly on the surface. However, to tap the full potential of SiGe quantum dots it is necessary to control the positioning and size of the dots on a nanometer length, e.g. for electronically addressing of individual dots. This can be realized by so-called templated self-assembly, which combines top-down lithography with bottom-up selfassembly. In this process the lithographically defined pits serve as pre-defined nucleation points for the epitaxially grown quantum dots. In this thesis, extreme ultraviolet interference lithography at a wavelength of e=13.4 nm is employed for prepatterning of the Si substrates. This technique allows the precise and fast fabrication of high-resolution templates with a high degree of reproducibility. The subsequent epitaxial deposition is either performed by molecular beam epitaxy or low-pressure chemical vapour deposition. It is shown that the dot nucleation on pre-patterned substrates depends strongly on the lithography parameters, e.g. size and periodicity of the pits, as well as on the epitaxy parameters, e.g. growth temperature or material coverage. The interrelations are carefully analyzed by means of scanning force microscopy, transmission electron microscopy and X-ray diffraction measurements. Provided that correct template and overgrowth parameters are chosen, perfectly aligned and uniform SiGe quantum dot arrays of different period, size as well as symmetry are created. In particular, the quantum dot arrays with the so far smallest period (35 nm) and smallest size dispersion are fabricated in this thesis. Furthermore, the strain fields of the underlying quantum dots allow the fabrication of vertically aligned quantum dot stacks. Combining lateral and vertical dot alignment results in three

  8. Ge based filled skutterudites MPt{sub 4}Ge{sub 12}: a {sup 195}Pt NMR study.

    Energy Technology Data Exchange (ETDEWEB)

    Baenitz, M.; Sarkar, R.; Gumenik, R.; Leithe-Jasper, A.; Schnelle, W.; Rosner, H.; Burkhardt, U.; Schmidt, M.; Schwarz, U.; Grin, Yu.; Steglich, F. [Max-Planck Institute for Chemical Physics of Solids, Dresden (Germany)

    2009-07-01

    Filled skutterudites MT{sub 4}X{sub 12}(M: alkaline or rare earth metals, T: Fe,Ru,Os, X: P,As,Sb) show a wide variety of strongly correlated electron physics from heavy fermions to Kondo insulators to unconventional superconductors. The new type of skutterudites, the Ge based system MPt{sub 4}Ge{sub 12} form with M=Ba,Sr,La,Ce,Pr,Sm,Eu. They exhibit metallic behaviour and show, with the exception of the systems with Ce, Sm and Eu, superconductivity at low temperature (T{sub c}<10 K). Here we present a temperature dependent {sup 195}Pt NMR study on the whole series of MPt{sub 4}Ge{sub 12} compounds with special attention on the magnetic systems with Ce, Sm and Eu. Here shift {sup 195}K(T) and spin lattice relaxation rate are discussed in the context of a dense Kondo system with a mixed valence state of Ce as well as for Sm. Especially the pronounced maximum observed in {sup 195}K(T) provides very strong evidence for a mixed valence behavior for this new class of material.

  9. Nanochannel-directed growth of multi-segment nanowire heterojunctions of metallic Au(1-x)Ge(x) and semiconducting Ge.

    Science.gov (United States)

    Li, Xiangdong; Meng, Guowen; Qin, Shengyong; Xu, Qiaoling; Chu, Zhaoqin; Zhu, Xiaoguang; Kong, Mingguang; Li, An-Ping

    2012-01-24

    We report on the synthesis of multi-segment nanowire (NW) junctions of Au(1-x)Ge(x) and Ge inside the nanochannels of porous anodic aluminum oxide template. The one-dimensional heterostructures are grown with a low-temperature chemical vapor deposition process, assisted by electrodeposited Au nanowires (AuNWs). The Au-catalyzed vapor-liquid-solid growth process occurs simultaneously in multiple locations along the nanochannel, which leads to multi-segment Au(1-x)Ge(x)/Ge heterojunctions. The structures of the as-grown hybrid NWs, analyzed by using transmission electron microscopy and energy-dispersive X-ray spectroscopy elemental mapping, show clear compositional modulation with variable modulation period and controllable junction numbers. Remarkably, both GeNW and Au(1-x)Ge(x)NW segments are single crystalline with abrupt interfaces and good crystallographic coherences. The electronic and transport properties of individual NW junctions are measured by using a multi-probe scanning tunneling microscope, which confirms the semiconducting nature of Ge segments and the metallic behavior of Au(1-x)Ge(x) segments, respectively. The high yield of multiple segment NW junctions of a metal-semiconductor can facilitate the applications in nanoelectronics and optoelectronics that harness multiple functionalities of heterointerfaces. © 2011 American Chemical Society

  10. A self-consistent numerical approach for characterizing the band structures and gain spectrum of tensile-strained and n+-doped Ge/GeSi quantum wells

    Science.gov (United States)

    Jiang, Yu; Xu, Yun; Wu, Haoyue; Li, Jian; Bai, Lin; Chen, Huamin; Zhang, Jiushuang; Song, Guofeng

    2017-11-01

    The strain-engineered and n+-doped Ge/Ge x Si1‑x alloy quantum well (QW) has the potential to be light-emitting material for Si-based photonics. Meanwhile, high doping concentration and injection carrier density induce electrostatic potential to the band profile. This effect is known as the carrier screening effect (CSE). So far, the CSE has not been sufficiently investigated in Ge/Ge x Si1‑x QW. In this work, we analyze the optical gain of a strained Ge/Ge x Si1‑x QW by means of a Schrödinger–Poisson self-consistent approach. The result shows that the optical gain of the QW is related to the doping profile. The electrostatic potential is important to the optical properties of the indirect-band QW. Without considering the CSE, the optical gain could be underestimated by 22.8%. We designed a doping strategy that alleviates the strain requirement for achieving positive optical gain. For designing Ge/Ge x Si1‑x alloy material for Si photonics, simulation performed by this method reflects key information for both strain engineering and doping strategy.

  11. Large-angle production of charged pions by 3 GeV/c - 12.9 GeV/c protons on beryllium, aluminium and lead targets

    CERN Document Server

    Catanesi, M.G.; Edgecock, R.; Ellis, Malcolm; Soler, F.J.P.; Gossling, C.; Bunyatov, S.; Krasnoperov, A.; Popov, B.; Serdiouk, V.; Tereschenko, V.; Di Capua, E.; Vidal-Sitjes, G.; Artamonov, A.; Giani, S.; Gilardoni, S.; Gorbunov, P.; Grant, A.; Grossheim, A.; Ivanchenko, V.; Kayis-Topaksu, A.; Panman, J.; Papadopoulos, I.; Tcherniaev, E.; Tsukerman, I.; Veenhof, R.; Wiebusch, C.; Zucchelli, P.; Blondel, A.; Borghi, S.; Morone, M.C.; Prior, G.; Schroeter, R.; Meurer, C.; Gastaldi, U.; Mills, G.B.; Graulich, J.S.; Gregoire, G.; Bonesini, M.; Ferri, F.; Kirsanov, M.; Bagulya, A.; Grichine, V.; Polukhina, N.; Palladino, V.; Coney, L.; Schmitz, D.; Barr, G.; De Santo, A.; Bobisut, F.; Gibin, D.; Guglielmi, A.; Mezzetto, M.; Dumarchez, J.; Dore, U.; Orestano, D.; Pastore, F.; Tonazzo, A.; Tortora, L.; Booth, C.; Howlett, L.; Bogomilov, M.; Chizhov, M.; Kolev, D.; Tsenov, R.; Piperov, Stefan; Temnikov, P.; Apollonio, M.; Chimenti, P.; Giannini, G.; Burguet-Castell, J.; Cervera-Villanueva, A.; Gomez-Cadenas, J.J.; Martin-Albo, J.; Novella, P.; Sorel, M.; CERN. Geneva

    2008-01-01

    Measurements of the double-differential $\\pi^{\\pm}$ production cross-section in the range of momentum $100 \\MeVc \\leq p < 800 \\MeVc$ and angle $0.35 \\rad \\leq \\theta < 2.15 \\rad$ in proton--beryllium, proton--aluminium and proton--lead collisions are presented. The data were taken with the HARP detector in the T9 beam line of the CERN PS. The pions were produced by proton beams in a momentum range from 3 \\GeVc to 12.9 \\GeVc hitting a target with a thickness of 5% of a nuclear interaction length. The tracking and identification of the produced particles was performed using a small-radius cylindrical time projection chamber (TPC) placed inside a solenoidal magnet. Incident particles were identified by an elaborate system of beam detectors. Results are obtained for the double-differential cross-sections at six incident proton beam momenta (3 \\GeVc, 5 \\GeVc, 8 \\GeVc, 8.9 \\GeVc (Be only), 12 \\GeVc and 12.9 \\GeVc (Al only)) and compared to previously available data.

  12. Te-rich Ge-Te-Se glass for the CO2 infrared detection at 15 μm

    NARCIS (Netherlands)

    Maurugeon, S.; Bureau, B.; Boussard-Plédel, C.; Faber, A.J.; Zhang, X.H.; Geliesen, W.; Lucas, J.H.

    2009-01-01

    Te80-xGe20Sex glasses have been prepared along the GeSe4-GeTe4 axis using the classical method in silica tube under vacuum. A phase separation domain appears for composition around Te40Ge20Se40. Our attention was turned toward the Te-rich compositions corresponding to 1 < x < 5 at.%. These glasses

  13. XPS study of non-stoichiometric amorphous GeN alloys (a-GeNx, 0≤x≤0.3)

    Science.gov (United States)

    Zanatta, A. R.; Landers, R.; de Castro, S. G. C.; Kleiman, G. G.; Chambouleyron, I.

    1996-07-01

    In this work experimentally determined values of the chemical shift (ΔB) induced by nitrogen in Ge core levels of sub-stoichiometric a-GeN alloys are presented and discussed. X-ray photoelectron spectroscopy (XPS) and X-ray excited Auger electron spectroscopy (XAES) were employed to study the behavior of the Ge 3d core levels and the Ge LMM transitions, respectively. The present data were compared to the core level shifts induced by other elements in the amorphous and crystalline Si and Ge networks. A linear relationship was found between chemical shifts in the core level binding energies and modified Auger parameters, when analyzed in terms of the charge transferred between impurity and host atoms' bonding.

  14. Polymorphic microsatellite loci in Chinese piebald odorous frog

    Indian Academy of Sciences (India)

    Yu Wang1 2 Ping Ding1 2. College of Life Sciences, Zhejiang University, Hangzhou 310058, People's Republic of China; The Key Laboratory of Conservation Biology for Endangered Wildlife, Ministry of Education, Hangzhou 310058, People's Republic of China ...

  15. Preparation, crystal structure, and characterization of an inorganic ...

    Indian Academy of Sciences (India)

    Author Affiliations. Jing-Ping Wang1 Hong-Yu Niu1 Jing-Yang Niu1. Institute of Molecular and Crystal Engineering, School of Chemistry and Chemical Engineering, Henan University, Kaifeng, Henan 475001, PR China ...

  16. Isolation and characterization of a new Pseudomonas- related strain ...

    African Journals Online (AJOL)

    SAM

    2014-04-02

    . 64(11):4396-4402. Wei GH, Yu JF, Zhu YH, Chen WM, Wang L (2008). Characterization of phenol degradation by Rhizobium sp CCNWTB 701 isolated from. Astragalus chrysopteru in mining tailing region. J. Hazard. Mater.

  17. Microscopic parameters of heterostructures containing nanoclusters and thin layers of Ge in Si matrix

    CERN Document Server

    Erenburg, S B; Stepina, N P; Nikiforov, A I; Nenashev, A V; Mazalov, L N

    2001-01-01

    GeK XAFS measurements have been performed using the total electron yield detection mode for pseudomorphous Ge films deposited on Si(0 0 1) substrate via molecular beam epitaxy at 300 deg. C. The samples have been produced by thrice repeating the growing procedure separated by deposition of blocking Si layers at 500 deg. C. The local microstructure parameters (interatomic distances, Ge coordination numbers) are linked to nanostructure morphology and adequate models are suggested and discussed. It was established that pseudomorphous 4-monolayer Ge films contain 50% of Si atoms on the average. Pyramid-like, pure Ge islands formed in the Stranski-Krastanov growth are characterized by the interatomic Ge-Ge distances of 2.41 A (by 0.04 A less than in bulk Ge) and the Ge-Si distances of 2.37 A. It was revealed that the pure Ge nanoclusters are covered by a 1-2-monolayer film with admixture on the average of a 50% Si atom impurity from blocking Si layers.

  18. Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)

    Energy Technology Data Exchange (ETDEWEB)

    Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

    2008-10-31

    Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

  19. The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films

    Directory of Open Access Journals (Sweden)

    Mursal Mursal

    2014-07-01

    Full Text Available The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from 2.5 – 12.5 sccm, while the flow rate of SiH4 was kept constant at 70 sccm. The results showed that the deposition rate of a-SiGe:H thin films increased by  increasing of GeH4 gas flow rate. In addition, the Ge content in the film increased and  the optical band gap decreased. The dark conductivity of a-SiGe:H films were relatively constant, whereas the photo conductivity decreased with increasing of Ge content.

  20. The Forgotten Great War: Viewpoint of a Political Scientist. Book review: Russia in the Great War of 1914-1918. The images and texts / ed. by A. K. Sorokin, A. Yu. Shutov ; auth.-comp. K. M. Anderson, et al. – Moscow : Politicheskaya entsik

    Directory of Open Access Journals (Sweden)

    Pankratov Sergey Anatolyevich

    2015-04-01

    Full Text Available This publication is a review of the book Russia in the Great War of 1914-1918. The images and texts, prepared by the team of authors and edited by A.K. Sorokin and A.Yu. Shutov in the context of joint activity of the Russian Society of Political Scientists,Faculty of Political Science of Lomonosov Moscow State University, Russian State Archive of Social and Political History. The reviewer characterizes the specifics of the publication which represents an attempt to reveal the atmosphere of the century-old events, semantic plots, images of people and their actions through the photographs from the pages of periodicals, posters and cartoons, leaflets and official documents of the First World War.

  1. Deeply virtual compton scattering at 6 GeV

    Energy Technology Data Exchange (ETDEWEB)

    Berthot, J. [Universite Blaise Pascal, Clermont-Ferrand II, Lab. de Physique Corpusculaire (CNRS), 63 - Aubiere (France); Chen, J.P.; Chudakov, E. [National Accelerator Facility, Newport News, Virginia (United States)] [and others

    2000-07-01

    We propose a measurement of the Deep Virtual Compton Scattering process (DVCS) ep {yields} ep{gamma} in Hall A at Jefferson Lab with a 6 GeV beam. We are able to explore the onset of Q{sup 2} scaling, by measuring a beam helicity asymmetry for Q{sup 2} ranging from 1.5 to 2.5 GeV{sup 2} at x{sub B}{approx}0.35. At this kinematics, the asymmetry is dominated by the DVCS - Bethe-Heitler (BH) interference, which is proportional to the imaginary part of the DVCS amplitude amplified by the full magnitude of the BH amplitude. The imaginary part of the DVCS amplitude is expected to scale early. Indeed, the imaginary part of the forward Compton amplitude measured in deep inelastic scattering (via the optical theorem) scales at Q{sup 2} as low as 1 GeV{sup 2}. If the scaling regime is reached, we will make an 8% measurement of the skewed parton distributions (SPD) contributing to the DVCS amplitude. Also, this experiment allows us to separately estimate the size of the higher-twist effects, since they are only suppressed by an additional factor 1/Q compared to the leading-twist term, and have a different angular dependence. We use a polarized electron beam and detect the scattered electron in the HRSe, the real photon in an electromagnetic calorimeter (under construction) and the recoil proton in a shielded scintillator array (to be constructed). This allows as to determine the difference in cross-sections for electrons of opposite helicities. This observable is directly linked to the SPD's. We estimate that 25 days of beam (600 hours) are needed to achieve this goal. (authors)

  2. Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor.

    Science.gov (United States)

    Chen, Lin; Cai, Fuxi; Otuonye, Ugo; Lu, Wei D

    2016-01-13

    Vertical junctionless transistors with a gate-all-around (GAA) structure based on Ge/Si core/shell nanowires epitaxially grown and integrated on a ⟨111⟩ Si substrate were fabricated and analyzed. Because of efficient gate coupling in the nanowire-GAA transistor structure and the high density one-dimensional hole gas formed in the Ge nanowire core, excellent P-type transistor behaviors with Ion of 750 μA/μm were obtained at a moderate gate length of 544 nm with minimal short-channel effects. The experimental data can be quantitatively modeled by a GAA junctionless transistor model with few fitting parameters, suggesting the nanowire transistors can be fabricated reliably without introducing additional factors that can degrade device performance. Devices with different gate lengths were readily obtained by tuning the thickness of an etching mask film. Analysis of the histogram of different devices yielded a single dominate peak in device parameter distribution, indicating excellent uniformity and high confidence of single nanowire operation. Using two vertical nanowire junctionless transistors, a PMOS-logic inverter with near rail-to-rail output voltage was demonstrated, and device matching in the logic can be conveniently obtained by controlling the number of nanowires employed in different devices rather than modifying device geometry. These studies show that junctionless transistors based on vertical Ge/Si core/shell nanowires can be fabricated in a controlled fashion with excellent performance and may be used in future hybrid, high-performance circuits where bottom-up grown nanowire devices with different functionalities can be directly integrated with an existing Si platform.

  3. Three-dimensional Si/Ge quantum dot crystals.

    Science.gov (United States)

    Grützmacher, Detlev; Fromherz, Thomas; Dais, Christian; Stangl, Julian; Müller, Elisabeth; Ekinci, Yasin; Solak, Harun H; Sigg, Hans; Lechner, Rainer T; Wintersberger, Eugen; Birner, Stefan; Holý, Vaclav; Bauer, Günther

    2007-10-01

    Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots to create quantum dot arrays, molecules, and crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at a wavelength of lambda = 13.5 nm for fast, large-area exposure of templates with perfect periodicity. Si(001) substrates have been patterned with two-dimensional hole arrays using EUV-IL and reactive ion etching. On these substrates, three-dimensionally ordered SiGe quantum dot crystals with the so far smallest quantum dot sizes and periods both in lateral and vertical directions have been grown by molecular beam epitaxy. X-ray diffractometry from a sample volume corresponding to about 3.6 x 10(7) dots and atomic force microscopy (AFM) reveal an up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution. Intense interband photoluminescence has been observed up to room temperature, indicating a low defect density in the three-dimensional (3D) SiGe quantum dot crystals. Using the Ge concentration and dot shapes determined by X-ray and AFM measurements as input parameters for 3D band structure calculations, an excellent quantitative agreement between measured and calculated PL energies is obtained. The calculations show that the band structure of the 3D ordered quantum dot crystal is significantly modified by the artificial periodicity. A calculation of the variation of the eigenenergies based on the statistical variation in the dot dimensions as determined experimentally (+/-10% in linear dimensions) shows that the calculated electronic coupling between neighboring dots is not destroyed due to the quantum dot size variations. Thus, not only from a structural point of view but also with respect to the band structure, the 3D ordered

  4. Backside-incidence critically coupled Ge on SOI photodetector

    Science.gov (United States)

    Liu, Yu-Hsuan; Wu, Tsung-Ting; Cheng, Szu-Lin; Liu, Han-Din; Lin, Chun-Chi; Chen, Hui-Wen; Lee, Ming-Chang M.; Na, Neil

    2017-02-01

    For present-day optical communication systems, the commonly used normal-incidence photodetectors suffer from the tradeoff between bandwidth and quantum efficiency. Such a tradeoff is especially adverse for long wavelength communication systems operating at higher data rates. For example, the maximum responsivity for a commercially available 25 Gbps photodetector operating at 1310 nm wavelength is limited to less than 0.8 A/W. In this work, we design and demonstrate a high-speed, backside-incidence, critically-coupled Ge on SOI photodetector operating at 1310 nm while maintaining a high quantum efficiency. Our device is fabricated with RPCVD epitaxy, i-line lithography, silicide contact, and Al metal wire, which are fully compatible with the state-of-art CMOS process technology. With our epitaxial scheme and surface passivation method, a low bulk (surface) dark current density of 13 mA/cm2 (0.79 μA/cm) is measured from a 700 nm thick Ge p-i-n device at -1 V bias. The responsivity at 1310 nm wavelength is measured to be 0.87 A/W, and the 3dB optical bandwidth of a 20 μm diameter device is measured to be 26 GHz. Our high-speed, backside-incidence, critically-coupled Ge on SOI photodetector may serve as a high-performance and low-cost solution for next generation high-speed optical receivers, and its benefit of decoupling bandwidth and quantum efficiency is especially prominent at higher data rates such as 40 Gbps and beyond.

  5. Hole spin coherence in a Ge/Si heterostructure nanowire.

    Science.gov (United States)

    Higginbotham, A P; Larsen, T W; Yao, J; Yan, H; Lieber, C M; Marcus, C M; Kuemmeth, F

    2014-06-11

    Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2* 0.18 μs exceeds corresponding measurements in III–V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.

  6. Hole Spin Coherence in a Ge/Si Heterostructure Nanowire

    OpenAIRE

    Higginbotham, A. P.; Larsen, T. W.; Yao, J.; Yan, H.; Lieber, C. M.; Marcus, C. M.; Kuemmeth, F.

    2014-01-01

    Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time $T_2^* \\sim 0.18~\\mathrm{\\mu s}$ exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaus...

  7. Ultrafast electron dynamics in GeSi nanostructures

    Science.gov (United States)

    Cavill, S. A.; Potenza, A.; Dhesi, S. S.

    2012-01-01

    The relaxation dynamics of photoexcited hot carriers in GexSi1-x islands grown on Si(111)-(7×7) have been studied with the spatial and temporal resolution of time-resolved two-photon photoemission electron microscopy. The relaxation dynamics of the excited electronic states within the Ge-rich GexSi1-x dots and the surrounding Si-rich wetting layer are found to vary significantly below the conduction-band minimum. These differences are ascribed to faster hot-carrier-diffusion rates for the islands compared to those for the wetting layer.

  8. Diamond turning of Si and Ge single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Blake, P.; Scattergood, R.O.

    1988-12-01

    Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

  9. Life with quintuplets: transitioning GeMS into regular operations

    Science.gov (United States)

    Garrel, Vincent; Van Dam, Marcos A.; Neichel, Benoît; Vidal, Fabrice; Sivo, Gaetano; Marin, Eduardo; Montes, Vanessa; Serio, Andrew; Arriagada, Gustavo; Trujillo, Chadwick; Rambold, William N.; Gigoux, Pedro; Galvez, Ramon; Moreno, Cristian; Araujo Hauck, Constanza; Vucina Parga, Tomislav; Donahue, Jeff; Marchant, Claudio; Gausachs, Gaston; Collao, Fabian; Carrasco Damele, Eleazar R.; Pessev, Peter; Lopez, Ariel

    2014-08-01

    The Gemini Multi-conjugate adaptive optics System (GeMS) at the Gemini South telescope in Cerro Pachon is the first sodium Laser Guide Star (LGS) adaptive optics (AO) system with multiple guide stars. It uses five LGSs and two deformable mirrors (DMs) to measure and compensate for distortions induced by atmospheric turbulence. After its 2012 commissioning phase, it is now transitioning into regular operations. Although GeMS has unique scientific capabilities, it remains a challenging instrument to maintain, operate and upgrade. In this paper, we summarize the latest news and results. First, we describe the engineering work done this past year, mostly during our last instrument shutdown in 2013 austral winter, covering many subsystems: an erroneous reconjugation of the Laser guide star wavefront sensor, the correction of focus field distortion for the natural guide star wavefront sensor and engineering changes dealing with our laser and its beam transfer optics. We also describe our revamped software, developed to integrate the instrument into the Gemini operational model, and the new optimization procedures aiming to reduce GeMS time overheads. Significant software improvements were achieved on the acquisition of natural guide stars by our natural guide star wavefront sensor, on the automation of tip-tilt and higher-order loop optimization, and on the tomographic non-common path aberration compensation. We then go through the current operational scheme and present the plan for the next years. We offered 38 nights in our last semester. We review the current system efficiency in term of raw performance, completed programs and time overheads. We also present our current efforts to merge GeMS into the Gemini base facility project, where night operations are all reliably driven from our La Serena headquarter, without the need for any spotter. Finally we present the plan for the future upgrades, mostly dedicated toward improving the performance and reliability of the

  10. Low background Ge spectrometry at Gran Sasso underground laboratories

    Energy Technology Data Exchange (ETDEWEB)

    Preusse, W. [Istituto Nazionale di Fisica Nucleare, Lab. Nazionali del Gran Sasso, Assergi (Italy); Bucci, C. [Istituto Nazionale di Fisica Nucleare, Lab. Nazionali del Gran Sasso, Assergi (Italy); Arpesella, C. [Istituto Nazionale di Fisica Nucleare, Lab. Nazionali del Gran Sasso, Assergi (Italy)

    1997-03-01

    Under the shelter of 1400 m limestone rock the Gran Sasso underground laboratories in the Apennines (110 km north-east of Rome at a turn-off inside the Gran Sasso motorway tunnel) were designed for running large experiments in the field of neutrino, particle and astrophysics by international collaborations. These experiments have in common the basic requirement to be capable to detect very rare events like e.g. neutrino interactions and double beta decays. Due to this their permanent demands for selecting radiopure materials have led to the equipping of a Ge detector laboratory - at present with 6 large detectors. (orig./DG)

  11. Photo-induced phenomena in GeO2 glass

    OpenAIRE

    Terakado, Nobuaki; Tanaka, Keiji

    2006-01-01

    Photo-induced changes in GeO2 glass have been studied in terms of its optical and structural properties. Band-gap excitation gives rise to modifications in mid-gap optical absorption and photo-luminescence spectra. It also produces electron-spin signals at g 1.995 and 2.008. Raman-scattering spectrum becomes sharper, X-ray diffraction patterns show a disappearance of a crystalline peak, and the illuminated surfaces expand. These observations can be accounted for by assuming bond transformati...

  12. Plasma Accelerators Race to 10 GeV and Beyond

    Science.gov (United States)

    Katsouleas, Tom

    2005-10-01

    This paper reviews the concepts, recent progress and current challenges for realizing the tremendous electric fields in relativistic plasma waves for applications ranging from tabletop particle accelerators to high-energy physics. Experiments in the 90's on laser-driven plasma wakefield accelerators at several laboratories around the world demonstrated the potential for plasma wakefields to accelerate intense bunches of self-trapped particles at rates as high as 100 GeV/m in mm-scale gas jets. These early experiments offered impressive gradients but large energy spread (100%) and short interaction lengths. Major breakthroughs have recently occurred on both fronts. Three groups (LBL-US, LOA-France and RAL-UK) have now entered a new regime of laser wakefield acceleration resulting in 100 MeV mono-energetic beams with up to nanoCoulombs of charge and very small angular spread. Simulations suggest that current lasers are just entering this new regime, and the scaling to higher energies appears attractive. In parallel with the progress in laser-driven wakefields, particle-beam driven wakefield accelerators are making large strides. A series of experiments using the 30 GeV beam of the Stanford Linear Accelerator Center (SLAC) has demonstrated high-gradient acceleration of electrons and positrons in meter-scale plasmas. The UCLA/USC/SLAC collaboration has accelerated electrons beyond 1 GeV and is aiming at 10 GeV in 30 cm as the next step toward a ``plasma afterburner,'' a concept for doubling the energy of a high-energy collider in a few tens of meters of plasma. In addition to wakefield acceleration, these and other experiments have demonstrated the rich physics bounty to be reaped from relativistic beam-plasma interactions. This includes plasma lenses capable of focusing particle beams to the highest density ever produced, collective radiation mechanisms capable of generating high-brightness x-ray beams, collective refraction of particles at a plasma interface, and

  13. Degradation of SiGe devices by proton irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ohyama, Hidenori; Hayama, Kiyoteru [Kumamoto National Coll. of Technology, Nishigoshi (Japan); Vanhellemont, J.; Takami, Yasukiyo; Sunaga, Hiromi; Nashiyama, Isamu; Uwatoko, Yoshiya; Poortmans, J.; Caymax, M.

    1997-03-01

    The degradation and recovery behavior of strained Si{sub 1-x}Ge{sub x} diodes and heterojunction bipolar transistors (HBTs) by irradiated by protons are studied. The degradation of device performance and the generation of lattice defects are reported as a function of fluence and germanium content and also compared extensively with previous results obtained on electron and neutron irradiated devices. In order to study the recovery behavior of the irradiated devices, isochronal annealing is performed. The radiation source dependence of the degradation is discussed taking into account the number of knock-on atoms and the nonionizing energy loss (NIEL). (author)

  14. Leptogenesis in GeV-scale seesaw models

    Energy Technology Data Exchange (ETDEWEB)

    Hernández, P.; Kekic, M. [Instituto de Física Corpuscular, Universidad de Valencia and CSIC,Edificio Institutos Investigación, Apt. 22085, Valencia, E-46071 (Spain); López-Pavón, J. [SISSA and INFN Sezione di Trieste,via Bonomea 265, Trieste, 34136 (Italy); Racker, J.; Rius, N. [Instituto de Física Corpuscular, Universidad de Valencia and CSIC,Edificio Institutos Investigación, Apt. 22085, Valencia, E-46071 (Spain)

    2015-10-09

    We revisit the production of leptonic asymmetries in minimal extensions of the Standard Model that can explain neutrino masses, involving extra singlets with Majorana masses in the GeV scale. We study the quantum kinetic equations both analytically, via a perturbative expansion up to third order in the mixing angles, and numerically. The analytical solution allows us to identify the relevant CP invariants, and simplifies the exploration of the parameter space. We find that sizeable lepton asymmetries are compatible with non-degenerate neutrino masses and measurable active-sterile mixings.

  15. Physics Potential of CLIC Operation at 380 GeV

    CERN Document Server

    Winter, Alasdair

    2017-01-01

    The Compact Linear Collider (CLIC) is a multi-TeV linear electron positron collider proposed as a future project for CERN aiming to provide high precision measurements of the standard model and discovery potential for new physics at the TeV scale. We present the physics potential of the CLIC experiment in its 380 GeV stage, which focuses on measurement of the Higgs boson and the top quark. In particular, the precision with which the mass, width and couplings of each particle can be measured will be examined.

  16. Formation of pores in Ge single crystal by laser radiation

    Energy Technology Data Exchange (ETDEWEB)

    Medvid' , A. [Laboratory of Semiconductor Physics, Riga Technical University, LV-1048, 14 Azenes Street, Riga (Latvia)]. E-mail: medvids@latnet.lv; Mychko, A. [Laboratory of Semiconductor Physics, Riga Technical University, LV-1048, 14 Azenes Street, Riga (Latvia); Krivich, A. [Laboratory of Semiconductor Physics, Riga Technical University, LV-1048, 14 Azenes Street, Riga (Latvia); Onufrijevs, P. [Laboratory of Semiconductor Physics, Riga Technical University, LV-1048, 14 Azenes Street, Riga (Latvia)

    2005-05-15

    Formation of a porous structure on the surface of Ge single crystals by pulsed YAG:Nd laser irradiation at the intensity of {approx}25 MW/cm{sup 2} is reported. An increase of surface recombination velocity on the irradiated surface by a factor of 100 is observed and explained by increase of the geometric area of the surface due to formation of pores. The latter is attributed to inhomogeneous pressure of a pulsed laser beam on the melting irradiated surface of the crystal.

  17. Funktionsverbgefüge - empirisch (am Beispiel von kommen

    Directory of Open Access Journals (Sweden)

    Kamber, Alain

    2006-01-01

    Full Text Available In grammars and textbooks used to teach German as a foreign language, the chapters devoted to the "Funktionsverbgefüge" (light verb constructions are based on data that are mainly obtained by introspection. German dictionaries also often seem not to be based on empirical data. Through the example of kommen (to come, the present paper aims at showing a few new and decisive elements that empirical, strictly corpus-driven research, by means of the new digital corpora, makes it possible to highlight. The purpose is to achieve a description that is more precise and more faithful to the target language in foreign languages teaching.

  18. Lifshitz Transitions in the Ferromagnetic Superconductor UCoGe.

    Science.gov (United States)

    Bastien, Gaël; Gourgout, Adrien; Aoki, Dai; Pourret, Alexandre; Sheikin, Ilya; Seyfarth, Gabriel; Flouquet, Jacques; Knebel, Georg

    2016-11-11

    We present high field magnetoresistance, Hall effect and thermopower measurements in the Ising-type ferromagnetic superconductor UCoGe. A magnetic field is applied along the easy magnetization c axis of the orthorhombic crystal. In the different experimental probes, we observed five successive anomalies at H≈4, 9, 12, 16, and 21 T. Magnetic quantum oscillations were detected both in resistivity and thermoelectric power. At most of the anomalies, significant changes of the oscillation frequencies and the effective masses have been observed, indicating successive Fermi surface instabilities induced by the strong magnetic polarization under a magnetic field.

  19. Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity.

    Science.gov (United States)

    Yuryev, Vladimir A; Arapkina, Larisa V; Storozhevykh, Mikhail S; Chapnin, Valery A; Chizh, Kirill V; Uvarov, Oleg V; Kalinushkin, Victor P; Zhukova, Elena S; Prokhorov, Anatoly S; Spektor, Igor E; Gorshunov, Boris P

    2012-07-23

    : Issues of Ge hut cluster array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Dynamics of the RHEED patterns in the process of Ge hut array formation is investigated at low and high temperatures of Ge deposition. Different dynamics of RHEED patterns during the deposition of Ge atoms in different growth modes is observed, which reflects the difference in adatom mobility and their 'condensation' fluxes from Ge 2D gas on the surface for different modes, which in turn control the nucleation rates and densities of Ge clusters. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films.Heteroepitaxial Si p-i-n-diodes with multilayer stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have been investigated and found to exhibit the photo-emf in a wide spectral range from 0.8 to 5 μm. An effect of wide-band irradiation by infrared light on the photo-emf spectra has been observed. Photo-emf in different spectral ranges has been found to be differently affected by the wide-band irradiation. A significant increase in photo-emf is observed in the fundamental absorption range under the wide-band irradiation. The observed phenomena are explained in terms of positive and neutral charge states of the quantum dot layers and the Coulomb potential of the quantum dot ensemble. A new design of quantum dot infrared photodetectors is proposed.By using a coherent source spectrometer, first measurements of terahertz dynamical conductivity (absorptivity) spectra of Ge/Si(001) heterostructures were performed at frequencies ranged from 0.3 to 1.2 THz in the temperature interval from 300 to 5 K. The effective dynamical conductivity of the heterostructures with Ge quantum dots has been discovered to be significantly higher than that of the structure with the same amount of bulk

  20. Influences of composition on Raman scattering from GeSi alloy core-shell nanowire heterostructures

    Science.gov (United States)

    Han, Delong; Ye, Han; Yu, Zhongyuan; Zhang, Yunzhen; Liu, Yumin; Li, Yinfeng

    2017-10-01

    In this paper, the influences of composition on Raman scattering from Ge/Si-GeSi core-shell nanowire heterostructures standing along [011] and [111] crystal directions are numerically investigated. Uniform, linear and spontaneous nonlinear composition profiles (CPs) in GeSi alloy shell are taken into consideration. In uniform CP case, clear double peaks in Raman spectra contributed by core and shell are observed. The strain-induced shift follows linear relation with Ge concentration and nonlinear relation with shell thickness. Larger strain-induced shifts are obtained in nanowires along [111] direction. In linear CP case, the peaks contributed by shell cannot be distinguished in the total spectra and plateaus are formed on the low frequency side. Moreover, the nonlinear CP accounts for the spontaneous composition transition near heterointerface during lateral epitaxy of GeSi shell. Due to the rapid Ge concentration transition, Raman spectra are shown nearly identical to uniform CP cases.

  1. Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy

    Science.gov (United States)

    Zhu, Zhongyunshen; Song, Yuxin; Zhang, Zhenpu; Sun, Hao; Han, Yi; Li, Yaoyao; Zhang, Liyao; Xue, Zhongying; Di, Zengfeng; Wang, Shumin

    2017-09-01

    We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy at the substrate temperature of ˜180 °C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs hold a smaller size, similar uniformity, and better fit with Au tips in diameter, in contrast to Ge NWs grown at around or above the eutectic temperature of Au-Ge alloy in the vapor-liquid-solid (VLS) growth. Six ⟨110⟩ growth orientations were observed on Ge (110) by the VSS growth at ˜180 °C, differing from only one vertical growth direction of Ge NWs by the VLS growth at a high temperature. The evolution of NWs dimension and morphology from the VLS growth to the VSS growth is qualitatively explained by analyzing the mechanism of the two growth modes.

  2. Electronic and magnetic properties of Ga, Ge, P and Sb doped monolayer arsenene

    Science.gov (United States)

    Bai, M.; Zhang, W. X.; He, C.

    2017-07-01

    In this paper, the structural, electronic, and magnetic properties of Ga, Ge, P and Sb doped monolayer arsenene have been systematically investigated by first-principles calculations based on density functional theory. The properties of monolayer arsenene can be effectively tuned by substitutional doping. Especially, the dopant Ga could lead to an indirect-to-direct bandgap transition and doping a Ge atom could exhibit dilute magnetic semiconductor property. In addition, the second Ge atom slightly prefers to occupy the next nearest-neighbor site of As atom to form the complex substituted defect (GeAs - As - GeAs) in As30Ge2 system and is found to be anti-ferromagnetic coupling. The diverse electronic and magnetic properties highlight the potential applications of monolayer arsenene in electronics, optoelectronics and spintronics.

  3. Measurements of e p →e'π+π-p' cross sections with CLAS at 1.40 GeV GeV and 2.0 GeV2GeV2

    Science.gov (United States)

    Isupov, E. L.; Burkert, V. D.; Carman, D. S.; Gothe, R. W.; Hicks, K.; Ishkhanov, B. S.; Mokeev, V. I.; Adhikari, K. P.; Adhikari, S.; Adikaram, D.; Akbar, Z.; Amaryan, M. J.; Anefalos Pereira, S.; Avakian, H.; Ball, J.; Baltzell, N. A.; Battaglieri, M.; Batourine, V.; Bedlinskiy, I.; Biselli, A. S.; Briscoe, W. J.; Brooks, W. K.; Bültmann, S.; Cao, T.; Celentano, A.; Charles, G.; Chetry, T.; Ciullo, G.; Clark, L.; Colaneri, L.; Cole, P. L.; Contalbrigo, M.; Cortes, O.; Crede, V.; D'Angelo, A.; Dashyan, N.; De Vita, R.; De Sanctis, E.; Deur, A.; Djalali, C.; Dupre, R.; El Alaoui, A.; El Fassi, L.; Elouadrhiri, L.; Eugenio, P.; Fedotov, G.; Fersch, R.; Filippi, A.; Fleming, J. A.; Forest, T. A.; Garçon, M.; Gavalian, G.; Ghandilyan, Y.; Gilfoyle, G. P.; Giovanetti, K. L.; Girod, F. X.; Glazier, D. I.; Gleason, C.; Golovatch, E.; Griffioen, K. A.; Guidal, M.; Guo, L.; Hafidi, K.; Hakobyan, H.; Hanretty, C.; Harrison, N.; Hattawy, M.; Heddle, D.; Holtrop, M.; Hughes, S. M.; Ilieva, Y.; Ireland, D. G.; Jenkins, D.; Jiang, H.; Joo, K.; Joosten, S.; Keller, D.; Khachatryan, G.; Khandaker, M.; Kim, A.; Kim, W.; Klein, A.; Klein, F. J.; Kubarovsky, V.; Kuleshov, S. V.; Kunkel, M.; Lanza, L.; Lenisa, P.; Livingston, K.; Lu, H. Y.; MacGregor, I. J. D.; Markov, N.; McKinnon, B.; Mineeva, T.; Mirazita, M.; Montgomery, R. A.; Movsisyan, A.; Munevar, E.; Munoz Camacho, C.; Murdoch, G.; Nadel-Turonski, P.; Niccolai, S.; Niculescu, G.; Niculescu, I.; Osipenko, M.; Paolone, M.; Paremuzyan, R.; Park, K.; Pasyuk, E.; Phelps, W.; Pogorelko, O.; Price, J. W.; Procureur, S.; Prok, Y.; Protopopescu, D.; Raue, B. A.; Ripani, M.; Riser, D.; Ritchie, B. G.; Rizzo, A.; Sabatié, F.; Salgado, C.; Schumacher, R. A.; Sharabian, Y. G.; Simonyan, A.; Skorodumina, Iu.; Smith, G. D.; Sokhan, D.; Sparveris, N.; Stankovic, I.; Strakovsky, I. I.; Strauch, S.; Taiuti, M.; Tian, Ye; Torayev, B.; Trivedi, A.; Ungaro, M.; Voskanyan, H.; Voutier, E.; Walford, N. K.; Wei, X.; Wood, M. H.; Zachariou, N.; Zhang, J.; CLAS Collaboration

    2017-08-01

    This paper reports new exclusive cross sections for e p →e'π+π-p' using the CLAS detector at Jefferson Laboratory. These results are presented for the first time at photon virtualities 2.0 GeV2GeV2 in the center-of-mass energy range 1.4 GeV GeV, which covers a large part of the nucleon resonance region. Using a model developed for the phenomenological analysis of electroproduction data, we see strong indications that the relative contributions from the resonant cross sections at W <1.74 GeV increase with Q2. These data considerably extend the kinematic reach of previous measurements. Exclusive e p →e'π+π-p' cross section measurements are of particular importance for the extraction of resonance electrocouplings in the mass range above 1.6 GeV.

  4. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman [Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H. [Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan (China); Loubychev, Dmitri; Liu, Amy; Fastenau, Joel [IQE, Inc., Bethlehem, Pennsylvania 18015 (United States); Lindemuth, Jeff [Lake Shore Cryotronics, Westerville, Ohio 43082 (United States)

    2014-08-04

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5× lower effective mass for s-InSb compared to s-Ge quantum well at 1.9 × 10{sup 12} cm{sup –2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  5. Characterization of Si sub 1 sub - sub x Ge sub x thin films prepared by sputtering

    CERN Document Server

    Noguchi, T

    2000-01-01

    By bombarding solid targets, we deposited Si sub 1 sub - sub x Ge sub x thin films by sputtering without using inflammable CVD (chemical vapor deposition) gases. After the B sup + -implanted Si sub 1 sub - sub x Ge sub x films were thermally annealed, they were characterized. As the content of Ge increased, the refractive index increased and the band edge narrowed. The higher the annealing temperature, the lower the resistivity. For Si sub 1 sub - sub x Ge sub x films with a high Ge content (X approx 0.5), the flat-band voltage of the gate deduced from C-V curve was adjusted to the middle point between p sup + and n sup + polySi gates. Boron-doped SiGe films are promising gate materials for MOS (metal oxide semiconductor) and SOI (silicon on insulator) transistors driven at low driving voltage.

  6. Properties of molten Ge chalcogenides an ab initio molecular dynamics study

    CERN Document Server

    Raty, J Y; Bichara, C

    2003-01-01

    In this study, we perform first-principles molecular dynamics simulations of the eutectic alloy Ge sub 1 sub 5 Te sub 8 sub 5 at five different densities and temperatures. We obtain structures in agreement with the available diffraction data and obtain a new view of the molten Ge chalcogenides. We show that the anomalous volume contraction observed in the liquid 30 K above the eutectic temperature corresponds to a significant change of the Ge-Te partial structure factor. The detailed structural analysis shows that volume variations observed upon melting in Ge sub 1 sub 5 Te sub 8 sub 5 , as in liquid GeSe and GeTe, can be explained in terms of the competition between two types of local environment of the germanium atoms. A symmetrical coordination octahedron is entropically favoured at high temperature, while an asymmetrical octahedron resulting from the local manifestation of the Peierls distortion is electronically favoured at lower temperatures.

  7. Room Temperature Ferromagnetic, Anisotropic, Germanium Rich FeGe(001) Alloys.

    Science.gov (United States)

    Lungu, George A; Apostol, Nicoleta G; Stoflea, Laura E; Costescu, Ruxandra M; Popescu, Dana G; Teodorescu, Cristian M

    2013-02-21

    Ferromagnetic FexGe1-x with x = 2%-9% are obtained by Fe deposition onto Ge(001) at high temperatures (500 °C). Low energy electron diffraction (LEED) investigation evidenced the preservation of the (1 × 1) surface structure of Ge(001) with Fe deposition. X-ray photoelectron spectroscopy (XPS) at Ge 3d and Fe 2p core levels evidenced strong Fe diffusion into the Ge substrate and formation of Ge-rich compounds, from FeGe₃ to approximately FeGe₂, depending on the amount of Fe deposited. Room temperature magneto-optical Kerr effect (MOKE) evidenced ferromagnetic ordering at room temperature, with about 0.1 Bohr magnetons per Fe atom, and also a clear uniaxial magnetic anisotropy with the in-plane easy magnetization axis. This compound is a good candidate for promising applications in the field of semiconductor spintronics.

  8. Uniform fabrication of Ge nanocrystals embedded into SiO2 film via neutron transmutation doping

    Directory of Open Access Journals (Sweden)

    Wei Liu

    2014-06-01

    Full Text Available Nanocrystalline 74Ge embedded SiO2 films were prepared by employing ion implantation and neutron transmutation doping methods. Transmission electron microscopy, energy dispersive x-ray spectroscopy, and photoluminescence of the obtained samples were measured. The existence of As dopants transmuted from 74Ge is significant to guarantee the uniformity and higher volume density of Ge nanocrystals by tuning the system׳s crystallinity and activating mass transfer process. It was observed that the photoluminescence intensity of Ge nanocrystals increased first then decreased with the increase of arsenic concentration. The optimized fluence of neutron transmutation doping was found to be 5.5×1017 cm−2 to achieve maximum photoluminescence emission in Ge embedded SiO2 film. This work opens a route in the three-dimensional nanofabrication of uniform Ge nanocrystals.

  9. Carrier trapping study on a Ge nanocrystal by two-pass lift mode electrostatic force microscopy

    Science.gov (United States)

    (林振, Z. Lin; Brunkov, P.; Bassani, F.; Descamps, A.; O'Dwyer, C.; Bremond, G.

    2015-03-01

    Trapped charges inside an isolated germanium nanocrystal (Ge NC) have been studied by two-pass lift mode electrostatic force microscopy (EFM) measurements at room temperature. From visualized EFM images, electrons and holes were proven to be successfully injected and trapped in the Ge NC and distributed homogenously at the edge of its truncated spherical morphology. The Ge NC is found to have iso-potential surface and behave as a conductive material after being charged. It is also shown that the dominant charge decay mechanism during discharging of Ge NCs is related to the leakage of these trapped charges. A truncated capacitor model is used to approximate the real capacitance between the tip and Ge NC surface and to quantitatively study these trapped charges. These investigations demonstrate the potential for Ge nanocrystal memory applications.

  10. Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy

    Science.gov (United States)

    Zhang, Z. P.; Song, Y. X.; Chen, Q. M.; Wu, X. Y.; Zhu, Z. Y. S.; Zhang, L. Y.; Li, Y. Y.; Wang, S. M.

    2017-11-01

    Growth mode of tensile-strained Ge quantum dots on different III–V buffers by molecular beam epitaxy is studied by a combination of reflection high-energy electron diffraction, atomic force microscopy and transmission electron microscopy. The Ge-QDs growth on the InAlAs buffer lattice matched to InP and on InAs buffer on GaSb follows the Volmer–Weber growth mode with round Ge QDs and no Ge wetting layer, while it obeys the Stranski–Krastanov growth mode on GaSb, AlSb and AlGaSb on GaSb substrates, showing rectangular shaped platelets and a clear Ge wetting layer. The discovery of the Volmer–Weber growth mode is essential to avoid forming a wetting layer and the subsequent antiphase-domain defects when capping III–Vs on Ge-QDs, important for potential optoelectronic applications.

  11. Dislocation density and strain-relaxation in Ge1-xSnx layers grown on Ge/Si (0 0 1) by low-temperature molecular beam epitaxy

    Science.gov (United States)

    Khiangte, Krista R.; Rathore, Jaswant S.; Sharma, Vaibhav; Bhunia, Swagata; Das, Sudipta; Fandan, Rajveer S.; Pokharia, Ravinder S.; Laha, Apurba; Mahapatra, Suddhasatta

    2017-07-01

    The density and origin of dislocations in a variety of molecular-beam-epitaxy-(MBE)-grown Ge1-xSnx/Ge/Si (0 0 1) heterostructures, with Sn-content varying from 0.4 to 5.2%, have been investigated systematically by high resolution X-ray diffraction (HRXRD). In particular, using the approach due to Kaganer et al. (V.M. Kaganer et al., Phys. Rev. B 72, 045423 (2005)) for the first time to the Ge1-xSnx alloy, it is demonstrated that reliable estimates of both edge and screw dislocation densities can be obtained from HRXRD data. Based on the correlations of strain relaxation and dislocation densities of the alloy epilayers and the underlying Ge buffer layers, we observe that dislocations threading from the latter predominantly contribute to the strain relaxation of the former. Thus, Ge1-xSnx epilayers of sub-critical thicknesses can be made to relax significantly by growing them on partially-relaxed, relatively-thin Ge buffer layers. This may be promising for the realization of Ge1-xSnx epilayers with direct electronic band gap.

  12. Crystal structures of the compounds Sm{sub 2}AlGe{sub 3} and Tb{sub 2}AlGe{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Mel' nyk, I. [Department of Crystallography, Maria Curie-Sklodowska University, pl. Marii Curie-Sklodowskiej 2, PL-20-031 Lublin (Poland); Kuprysyuk, V. [Department of Physicochemistry of Solid Surface, Maria Curie-Sklodowska University, pl. Marii Curie-Sklodowskiej 2, PL-20-031 Lublin (Poland); Gladyshevskii, R. [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, vul. Kyryla i Mefodiya 6, UA-79005 Lviv (Ukraine)]. E-mail: roman.gladyshevskii@franko.lviv.ua; Pikus, S. [Department of Crystallography, Maria Curie-Sklodowska University, pl. Marii Curie-Sklodowskiej 2, PL-20-031 Lublin (Poland); Staszczuk, P. [Department of Physicochemistry of Solid Surface, Maria Curie-Sklodowska University, pl. Marii Curie-Sklodowskiej 2, PL-20-031 Lublin (Poland)

    2005-07-19

    The structures of two new rare-earth aluminum germanides, Sm{sub 2}AlGe{sub 3} and Tb{sub 2}AlGe{sub 3}, were determined from X-ray powder diffraction data (R {sub B} = 0.066 and 0.064, respectively). These R{sub 2}AlGe{sub 3} compounds crystallize with orthorhombic structures of the Y{sub 2}AlGe{sub 3} type, oP24 (62) Pnma - c {sup 6}, a = 6.8153(4), b = 4.2723(3), c = 17.9491(10) A (R = Sm) and a = 6.7749(4), b = 4.1980(3), c = 17.7222(10) A (R = Tb), Z = 4. Two-thirds of the Ge atoms are situated at the centers of R{sub 6} trigonal prisms, whereas the other Ge atoms occupy the centers of R{sub 4} tetrahedra. Four other compounds are known to crystallize with the same structure type, R = Dy, Ho, Er and Tm, but Sm{sub 2}AlGe{sub 3} is the first example of an isotypic compound where R is a light rare-earth element.

  13. Snap-shot survey of unidentified galactic GeV sources

    Science.gov (United States)

    Garmire, Gordon

    2009-09-01

    We will observe unidentified GeV sources in the Galactic plane recently discovered by Fremi/LAT. Most of the galactic GeV sources are likely to be associated with pulsars and SNRs. High-resolution X-ray observations provide an efficient way to identify the nature of GeV sources and obtain a much more complete census of galactic neutron stars.

  14. Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation

    Energy Technology Data Exchange (ETDEWEB)

    Mala, S. A.; Tsybeskov, L., E-mail: tsybesko@njit.edu [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102 (United States); Lockwood, D. J.; Wu, X.; Baribeau, J.-M. [National Research Council, Ottawa, Ontario K1A 0R6 (Canada)

    2014-07-07

    We present a quantitative analysis of Raman scattering in various Si/Si{sub 1-x}Ge{sub x} multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and anti-Stokes Raman signals, we calculate temperature and discuss heat dissipation in the samples under intense laser illumination.

  15. P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Y.J.; Chia, C.K.; Liu, H.F.; Wong, L.M.; Chai, J.W.; Chi, D.Z.; Wang, S.J., E-mail: sj-wang@imre.a-star.edu.sg

    2016-07-15

    Highlights: • The heterogeneous integration of p-Ge/GaAs by MOCVD indicates significance for the application in optoelectronic devices such as p-MOSFET, dual band photodetector, etc. • Many undesired pillar-structures were observed on the p-Ge epilayers and we found that the cause of the pillar-like structures was related to the Ge-Ga dimers formed during the growth. • We found that a GaAs substrate with fewer Ga or Ge danglings was helpful in suppressing the formation of the unwanted pillar-like structures and thus obtaining high quality p-Ge epilayers. - Abstract: In this work, Ga-doped Geranium (Ge) films have been grown on GaAs (100) substrates by metal-organic chemical vapor deposition (MOCVD). Undesired pillar structures have been observed on the epilayers prepared at relatively lower temperatures. Energy dispersive X-ray spectroscopy (EDX) indicated that the pillars are mainly consisted of Ga atoms, which is totally different from that of the Ge film. It was demonstrated that the pillar structures could be reduced by simply raising the growth temperature while keeping the other growth conditions unchanged. In this regard, the growth mechanism of the pillars was related to the Ge-Ga dimers formed during the growth of p-Ge films. By further studying the influence of a GaAs or Ge buffer layer on the growth of p-Ge layers, we found that the GaAs substrate with lower density of Ga or Ge dangling bonds was helpful in suppressing the formation of the undesired pillar structures.

  16. GE Nuclear Hitachi Energy is prepared for the nuclear Renaissance; GE Hitachi Nuclear Energy se prepara para el renacimiento nuclear

    Energy Technology Data Exchange (ETDEWEB)

    Carelli, J. M.

    2008-07-01

    GE Hitachi Nuclear Energy (GEH) is offering two technologies to meet the needs of utilities planning new nuclear projects. An aging workforce, new technological developments and forecasts of considerable new construction projects, raise questions for the entire industry regarding our human resources. In order to prepare for the coming resurgence in new nuclear projects, GEH taking positive action to ensure that adequate human resources are available. From early learning programs that encourage young students to pursue careers in science and technology, to hands-on vocational and engineering programs, GEH works with communities and young people to recruit and train the workforce that will enable our success. (Author)

  17. Radiation microscope for SEE testing using GeV ions.

    Energy Technology Data Exchange (ETDEWEB)

    Doyle, Barney Lee; Knapp, James Arthur; Rossi, Paolo; Hattar, Khalid M.; Vizkelethy, Gyorgy; Brice, David Kenneth; Branson, Janelle V.

    2009-09-01

    Radiation Effects Microscopy is an extremely useful technique in failure analysis of electronic parts used in radiation environment. It also provides much needed support for development of radiation hard components used in spacecraft and nuclear weapons. As the IC manufacturing technology progresses, more and more overlayers are used; therefore, the sensitive region of the part is getting farther and farther from the surface. The thickness of these overlayers is so large today that the traditional microbeams, which are used for REM are unable to reach the sensitive regions. As a result, higher ion beam energies have to be used (> GeV), which are available only at cyclotrons. Since it is extremely complicated to focus these GeV ion beams, a new method has to be developed to perform REM at cyclotrons. We developed a new technique, Ion Photon Emission Microscopy, where instead of focusing the ion beam we use secondary photons emitted from a fluorescence layer on top of the devices being tested to determine the position of the ion hit. By recording this position information in coincidence with an SEE signal we will be able to indentify radiation sensitive regions of modern electronic parts, which will increase the efficiency of radiation hard circuits.

  18. Lifetimes and Oscillator Strengths for Ultraviolet Transitions in Ge II

    Science.gov (United States)

    Heidarian, Negar; Irving, Richard E.; Federman, Steven R.; Ellis, David G.; Cheng, Song; Curtis, Larry J.

    2017-04-01

    Better understanding of the atomic structure for atomic ions requires experimental measurements for lifetimes and oscillator strengths which also serve as a test for theoretical calculations. Furthermore, interpreting astronomical observations of atomic ions requires knowledge of their oscillator strengths and transition probabilities. We present the results of lifetime measurements with beam-foil techniques performed with the Toledo Heavy-Ion Accelerator on levels of interest in Ge II producing transitions to the ground term at 1237.1 Å and 1261.9 Å (4s2 4 d 2D3 / 2 and 4s2 4 d 2D5 / 2 , respectively). Oscillator strengths are derived from the lifetimes, and our experimental results are compared with our MCDHF calculations using the development version of the GRASP2K package as well as the latest calculations done by others. We also provide an overall comparison of our studies on the ns2 nd 2 D and nsnp2 2 D terms in three elements of group IV of the periodic table, namely Pb II, Sn II and Ge II. This work was supported in part by Grant HST-AR-12123.001-A, from the Space Telescope Science Institute.

  19. The 750 GeV Diphoton Resonance in the MSSM

    CERN Document Server

    Djouadi, Abdelhak

    2017-02-10

    We propose a simple interpretation of the 750 GeV diphoton resonance as hinted by the current 13 TeV LHC data, within the context of the Minimal Supersymmetric extension of the Standard Model (MSSM). In the CP-conserving limit of the theory, the resonance may be identified with the heavier CP-even $H$ boson of the MSSM, whose gluon-fusion production and decay into two photons are enhanced by loops of the lightest supersymmetric partner of the top quark $\\tilde{t}_1$ when its mass $m_{\\tilde{t}_1}$ happens to be near the $\\tilde{t}^*_1\\tilde{t}_1$ threshold, i.e.~for $m_{\\tilde{t}_1} \\sim \\frac12 M_H$ and, to a lesser extent, by resonant contributions due to $\\tilde{t}_1^* \\tilde{t}_1$ bound states. The scenario requires a relatively low supersymmetry-breaking scale~$M_S\\lsim 1$~TeV, but large values of the higgsino mass parameter, $\\mu \\gsim 3$ TeV that leads to a strong $H \\tilde{t}_1 \\tilde{t}_1$ coupling. Such parameters can accommodate the observed mass and standard-like couplings of the 125~GeV $h$ boson...

  20. 750 GeV diphotons from a D3-brane

    Directory of Open Access Journals (Sweden)

    Jonathan J. Heckman

    2016-05-01

    Full Text Available Motivated by the recently reported diphoton excess at 750 GeV observed by both CMS and ATLAS, we study string-based particle physics models which can accommodate this signal. Quite remarkably, although Grand Unified Theories in F-theory tend to impose tight restrictions on candidate extra sectors, the case of a probe D3-brane near an E-type Yukawa point naturally leads to a class of strongly coupled models capable of accommodating the observed signature. In these models, the visible sector is realized by intersecting 7-branes, and the 750 GeV resonance is a scalar modulus associated with motion of the D3-brane in the direction transverse to the Standard Model 7-branes. Integrating out heavy 3–7 string messenger states leads to dimension five operators for gluon fusion production and diphoton decays. Due to the unified structure of interactions, these models also predict that there should be additional decay channels to ZZ and Zγ. We also comment on models with distorted unification, where both the production mechanism and decay channels can differ.

  1. Temperature stabilizes rough Au/Ge(001) surface reconstructions

    Science.gov (United States)

    Seino, Kaori; Sanna, Simone; Schmidt, Wolf Gero

    2018-01-01

    The temperature-dependent energetics of self-assembled Au nanowires on Ge(001) surfaces is studied with the help of density-functional theory (DFT) calculations: By calculating the surface phonon modes within harmonic approximation the surface vibrational free energy is obtained to complement the zero-temperature DFT total energies. We consider several previously suggested structural models for a Au coverage between 0.75 and 1.75 monolayer and investigate a temperature range between 0 and 900 K. The stability of the investigated surface models is found to depend clearly on temperature. We find that the extended Ge bridge dimer model previously predicted to be most stable for a large range of preparation conditions is less prominent in the phase diagrams for finite temperatures. On the other hand, a model derived previously from the giant missing row structure with a higher Au coverage gets stabilized by temperature. These findings explain, at least partially, the discrepancies between experimental data and previous theoretical investigations neglecting temperature effects.

  2. 12 GeV Upgrade Project - Cryomodule Production

    Energy Technology Data Exchange (ETDEWEB)

    J. Hogan, A. Burrill, G.K. Davis, M.A. Drury, M. Wiseman

    2012-07-01

    The Thomas Jefferson National Accelerator Facility (Jefferson Lab) is producing ten 100+MV SRF cryomodules (C100) as part of the CEBAF 12 GeV Upgrade Project. Once installed, these cryomodules will become part of an integrated accelerator system upgrade that will result in doubling the energy of the CEBAF machine from 6 to 12 GeV. This paper will present a complete overview of the C100 cryomodule production process. The C100 cryomodule was designed to have the major components procured from private industry and assembled together at Jefferson Lab. In addition to measuring the integrated component performance, the performance of the individual components is verified prior to being released for production and assembly into a cryomodule. Following a comprehensive cold acceptance test of all subsystems, the completed C100 cryomodules are installed and commissioned in the CEBAF machine in preparation of accelerator operations. This overview of the cryomodule production process will include all principal performance measurements, acceptance criterion and up to date status of current activities.

  3. Pressure-induced transformations in amorphous Si-Ge alloy

    Energy Technology Data Exchange (ETDEWEB)

    Coppari, F.; Polian, A.; Menguy, N.; Trapananti, A.; Congeduti, A.; Newville, M.; Prakapenka, V.B.; Choi, Y.; Principi, E.; Di Cicco, A. (CNRS-UMR); (UC); (Camerino)

    2012-03-14

    The pressure behavior of an amorphous Si-rich SiGe alloy ({alpha}-Si{sub x}Ge{sub 1-x}, x = 0.75) has been investigated up to about 30 GPa, by a combination of Raman spectroscopy, x-ray absorption spectroscopy, and x-ray diffraction measurements. The trends of microscopic structural properties and of the Raman-active phonon modes are presented in the whole pressure range. Nucleation of nanocrystalline alloy particles and metallization have been observed above 12 GPa, with a range of about 2 GPa of coexistence of amorphous and crystalline phases. Transformations from the amorphous tetrahedral, to the crystalline tetragonal ({beta}-Sn) and to the simple hexagonal structures have been observed around 13.8 and 21.8 GPa. The recovered sample upon depressurization, below about 4 GPa, shows a local structure similar to the as-deposited one. Inhomogeneities of the amorphous texture at the nanometric scale, probed by high-resolution transmission electron microscopy, indicate that the recovered amorphous sample has a different ordering at this scale, and therefore the transformations can not be considered fully reversible. The role of disordered grain boundaries at high pressure and the possible presence of a high-density amorphous phase are discussed.

  4. Lattice location and stability of implanted Cu in Ge

    CERN Document Server

    Wahl, U; Soares, J C

    2003-01-01

    We report on emission channeling experiments using the radioactive isotope $^{67}$Cu implanted into single crystalline i-Ge at a dose of 2.4 $\\times 10^{12}$ cm$^{-2}$. The lattice location of $^{67}$Cu was determined from the angular-dependent $\\beta^{-}$ emission yield, which was measured by means of a position-sensitive detector around the , and directions. We find that already in the as-implanted state a considerable fraction of Cu (20-25%) occupies ideal substitutional lattice positions, a similar fraction is located on positions that are displaced around 0.5-0.6 from substitutional sites. Following annealing at 300°C for 10 min, the substitutional fraction of implanted Cu increased to 45% while the fraction of displaced Cu decreased to 23%. Upon further annealing at 400°C, channeling effects disappeared completely and around 10% of $^{67}$Cu diffused out of the Ge sample. From this we can estimate the activation energy for dissociation of substitutional Cu to be around 1.6-1.9 eV.

  5. Experimental Investigation and Thermodynamic Modeling of the Ag-Cu-Ge System

    Science.gov (United States)

    Guo, Cuiping; Zou, Lei; Li, Changrong; Du, Zhenmin

    2017-10-01

    The liquidus surface projection was re-investigated using scanning electron microscopy with energy dispersive spectrometer and differential thermal analysis. The invariant reactions, liq. → fcc(Ag) + diam(Ge) + η at 810 K (537 °C), and liq. + ɛ → η + fcc(Ag) at 848 K (575 °C) were confirmed, and θ →liq. + η + diam(Ge) at 859 K (586 °C) was inferred in the present work. On the basis of the experimental data in the present work and literature, the Ag-Cu-Ge system was modeled using the CALPHAD (CALculation of PHAse Diagram) method. Solution phases, liquid, hcp, and fcc, were modeled as (Ag, Cu, Ge) using the substitutional solution model in the Ag-Cu-Ge ternary system. The compounds, ɛ, η, and θ, in the Cu-Ge system, were treated as line compounds (Ag, Cu) m Ge n in the Ag-Cu-Ge system. A set of self-consistent thermodynamic parameters was obtained. Using these thermodynamic parameters, the experimental isothermal sections at 763 K, 793 K, 863 K, and 923 K (490 °C, 520 °C, 590 °C, and 650 °C), the vertical section at 38.0 at. pct Cu, the liquidus surface projection, and the invariant reactions in the Ag-Cu-Ge system were well reproduced.

  6. Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films

    Science.gov (United States)

    Qiu, X. Y.; Zhang, S. Y.; Zhang, T.; Wang, R. X.; Li, L. T.; Zhang, Y.; Dai, J. Y.

    2016-09-01

    Amorphous Ge-doped HfOx films have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfOx matrix and the existence of HfSiOx interfacial layer. Capacitance-voltage hysteresis of the Ag-/Ge-doped HfOx/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 × 104 cycles. Current-voltage characteristics reveal that Poole-Frenkel tunneling is responsible for electron transport in the Ge-doped HfOx film.

  7. Optimization of ISBD embedded SiGe layers to prevent delamination process for MOSFET applications

    Science.gov (United States)

    Wasyluk, Joanna; Ge, Yang; Wurster, Kai; Lenski, Markus; Reichel, Carsten

    2015-08-01

    An interaction between in situ boron doped SiGe layers deposited by low pressure chemical vapor deposition and NH3 plasma treatments was studied in this work. It is shown that NH3 plasma strips introduce H atoms into SiGe layer which further leads to unwanted blistering and exfoliation of the SiGe layer. The SiGe layers with varied boron profiles were examined in this work in order to understand influence of B doping on H accumulation. It is shown that B peak at SiGe/Si interface can be modulated by the temperature and pressure changes between the layers' deposition. It was found that less H atoms diffuse into ISBD SiGe layer with higher B peak at Si cap/main SiGe layer. The SiGe layer with removed B peak at buffer/main SiGe layer interface and increased B peak at Si cap was proven to be delamination free and robust for HN3 plasma strips.

  8. Experimental evidence of zone-center optical phonon softening by accumulating holes in thin Ge

    Energy Technology Data Exchange (ETDEWEB)

    Kabuyanagi, Shoichi; Nishimura, Tomonori; Yajima, Takeaki; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2016-01-15

    We discuss the impact of free carriers on the zone-center optical phonon frequency in germanium (Ge). By taking advantage of the Ge-on-insulator structure, we measured the Raman spectroscopy by applying back-gate bias. Phonon softening by accumulating holes in Ge film was clearly observed. This fact strongly suggests that the phonon softening in heavily-doped Ge is mainly attributed to the free carrier effect rather than the dopant atom counterpart. Furthermore, we propose that the free carrier effect on phonon softening is simply understandable from the viewpoint of covalent bonding modification by free carriers.

  9. Constraints on anomalous QGC's in $e^{+}e^{-}$ interactions from 183 to 209 GeV

    CERN Document Server

    Heister, A; Barate, R; Brunelière, R; De Bonis, I; Décamp, D; Goy, C; Jézéquel, S; Lees, J P; Martin, F; Merle, E; Minard, M N; Pietrzyk, B; Trocmé, B; Bravo, S; Casado, M P; Chmeissani, M; Crespo, J M; Fernández, E; Fernández-Bosman, M; Garrido, L; Martínez, M; Pacheco, A; Ruiz, H; Colaleo, A; Creanza, D; De Filippis, N; De Palma, M; Iaselli, G; Maggi, G; Maggi, M; Nuzzo, S; Ranieri, A; Raso, G; Ruggieri, F; Selvaggi, G; Silvestris, L; Tempesta, P; Tricomi, A; Zito, G; Huang, X; Lin, J; Ouyang, Q; Wang, T; Xie, Y; Xu, R; Xue, S; Zhang, J; Zhang, L; Zhao, W; Abbaneo, D; Barklow, T; Buchmüller, O L; Cattaneo, M; Clerbaux, B; Drevermann, H; Forty, R W; Frank, M; Gianotti, F; Hansen, J B; Harvey, J; Hutchcroft, D E; Janot, P; Jost, B; Kado, M; Mato, P; Moutoussi, A; Ranjard, F; Rolandi, Luigi; Schlatter, W D; Sguazzoni, G; Teubert, F; Valassi, Andrea; Videau, I; Badaud, F; Dessagne, S; Falvard, A; Fayolle, D; Gay, P; Jousset, J; Michel, B; Monteil, S; Pallin, D; Pascolo, J M; Perret, P; Hansen, J D; Hansen, J R; Hansen, P H; Kraan, A C; Nilsson, B S; Kyriakis, A; Markou, C; Simopoulou, Errietta; Vayaki, Anna; Zachariadou, K; Blondel, A; Brient, J C; Machefert, F P; Rougé, A; Videau, H L; Ciulli, V; Focardi, E; Parrini, G; Antonelli, A; Antonelli, M; Bencivenni, G; Bossi, F; Capon, G; Cerutti, F; Chiarella, V; Laurelli, P; Mannocchi, G; Murtas, G P; Passalacqua, L; Kennedy, J; Lynch, J G; Negus, P; O'Shea, V; Thompson, A S; Wasserbaech, S R; Cavanaugh, R J; Dhamotharan, S; Geweniger, C; Hanke, P; Hepp, V; Kluge, E E; Putzer, A; Stenzel, H; Tittel, K; Wunsch, M; Beuselinck, R; Cameron, W; Davies, G; Dornan, P J; Girone, M; Hill, R D; Marinelli, N; Nowell, J; Rutherford, S A; Sedgbeer, J K; Thompson, J C; White, R; Ghete, V M; Girtler, P; Kneringer, E; Kuhn, D; Rudolph, G; Bouhova-Thacker, E; Bowdery, C K; Clarke, D P; Ellis, G; Finch, A J; Foster, F; Hughes, G; Jones, R W L; Pearson, M R; Robertson, N A; Smizanska, M; van der Aa, O; Delaere, C; Leibenguth, G; Lemaître, V; Blumenschein, U; Hölldorfer, F; Jakobs, K; Kayser, F; Kleinknecht, K; Müller, A S; Renk, B; Sander, H G; Schmeling, S; Wachsmuth, H W; Zeitnitz, C; Ziegler, T; Bonissent, A; Coyle, P; Curtil, C; Ealet, A; Fouchez, D; Payre, P; Tilquin, A; Ragusa, F; David, A; Dietl, H; Ganis, G; Hüttmann, K; Lütjens, G; Männer, W; Moser, H G; Settles, Ronald; Villegas, M; Wolf, G; Boucrot, J; Callot, O; Davier, M; Duflot, L; Grivaz, J F; Heusse, P; Jacholkowska, A; Serin, L; Veillet, J J; Azzurri, P; Bagliesi, G; Boccali, T; Foà, L; Giammanco, A; Giassi, A; Ligabue, F; Messineo, A; Palla, F; Sanguinetti, G; Sciabà, A; Spagnolo, P; Tenchini, R; Venturi, A; Verdini, P G; Awunor, O; Blair, G A; Cowan, G; García-Bellido, A; Green, M G; Medcalf, T; Misiejuk, A; Strong, J A; Teixeira-Dias, P; Clifft, R W; Edgecock, T R; Norton, P R; Tomalin, I R; Ward, J J; Bloch-Devaux, B; Boumediene, D E; Colas, P; Fabbro, B; Lançon, E; Lemaire, M C; Locci, E; Pérez, P; Rander, J; Tuchming, B; Vallage, B; Litke, A M; Taylor, G; Booth, C N; Cartwright, S; Combley, F; Hodgson, P N; Lehto, M H; Thompson, L F; Böhrer, A; Brandt, S; Grupen, C; Hess, J; Ngac, A; Prange, G; Borean, C; Giannini, G; He, H; Pütz, J; Rothberg, J E; Armstrong, S R; Berkelman, K; Cranmer, K; Ferguson, D P S; Gao, Y; González, S; Hayes, O J; Hu, H; Jin, S; Kile, J; McNamara, P A; Nielsen, J; Pan, Y B; Von Wimmersperg-Töller, J H; Wiedenmann, W; Wu, J; Wu Sau Lan; Wu, X; Zobernig, G; Dissertori, G

    2004-01-01

    The acoplanar photon pairs produced in the reaction e+ e- --> nu nubar gamma gamma are analysed in the 700 inverse nanobarns of data collected by the ALEPH detector at centre-of-mass energies between 183 and 209 GeV. No deviation from the Standard Model predictions is seen in any of the distributions examined. The resulting 95% C.L. limits set on the anomalous QGC's, az_0, az_c, aw_0 and aw_c, are -0.012 GeV**-2 < az_0/Lambda**2 < +0.019 GeV**-2, -0.041 GeV**-2 < az_c/Lambda**2 < +0.044 GeV**-2, -0.060 GeV**-2 < aw_0/Lambda**2 < +0.055 GeV**-2, -0.099 GeV**-2 < aw_c/Lambda**2 < +0.093 GeV**-2, where Lambda is the energy scale of the new Physics responsible for the anomalous couplings.

  10. Atomic structure of self-organizing iridium induced nanowires on Ge(001)

    Energy Technology Data Exchange (ETDEWEB)

    Kabanov, N.S., E-mail: n.kabanov@utwente.nl [Faculty of Physics, Moscow State University, 119991 (Russian Federation); Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P. O. Box 217, Enschede 7500 AE (Netherlands); Heimbuch, R.; Zandvliet, H.J.W. [Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P. O. Box 217, Enschede 7500 AE (Netherlands); Saletsky, A.M.; Klavsyuk, A.L. [Faculty of Physics, Moscow State University, 119991 (Russian Federation)

    2017-05-15

    Highlights: • Ir/Ge(001) structure has been studied with DFT calculations and scanning tunneling microscopy. • Ir/Ge(001) nanowires are composed of Ge atoms and Ir atoms are located in subsurface positions. • The regions in the vicinity of the nanowires are very dynamic, even at temperatures as low as 77 K. - Abstract: The atomic structure of self-organizing iridium (Ir) induced nanowires on Ge(001) is studied by density functional theory (DFT) calculations and variable-temperature scanning tunneling microscopy. The Ir induced nanowires are aligned in a direction perpendicular to the Ge(001) substrate dimer rows, have a width of two atoms and are completely kink-less. Density functional theory calculations show that the Ir atoms prefer to dive into the Ge(001) substrate and push up the neighboring Ge substrate atoms. The nanowires are composed of Ge atoms and not Ir atoms as previously assumed. The regions in the vicinity of the nanowires are very dynamic, even at temperatures as low as 77 K. Time-resolved scanning tunneling microscopy measurements reveal that this dynamics is caused by buckled Ge substrate dimers that flip back and forth between their two buckled configurations.

  11. Exchange and Dzyaloshinskii-Moriya interactions in bulk FeGe: Effects of atomic vacancies

    Directory of Open Access Journals (Sweden)

    G. C. Loh

    2017-05-01

    Full Text Available We examine the effects of atomic vacancies on the (1 spin interaction, and (2 electronic character in the cubic B20 chiral magnet FeGe. For the former, Heisenberg exchange and Dzyaloshinskii-Moriya (DM interactions are studied. The latter is done via a particular Wannier flavor of the Hamiltonian in the form of maximally-localized Wannier functions (MLWFs. Using first-principles calculations based on full-potential linearized augmented plane-wave (FLAPW-based density functional theory (DFT, the spin order of bulk FeGe, in its pristine form, and with a Fe (Fe75%Ge100% or Ge vacancy (Fe100%Ge75% is investigated. Despite the presence of vacancies, the ground state of FeGe remains helimagnetic, i.e. spin spirals in FeGe are fairly robust. The energetic stability of FeGe increases in the presence of the vacancies. The spiral size is increased by approximately 40%, suggesting that vacancies can be introduced to manipulate the chiral order. The vacancies lift the band degeneracy in the valence manifold of the Wannier-interpolated band structures. Only the spin-down Fermi surfaces are substantially different between the pristine and defective FeGe; it is electron-like in the pristine case, but largely hole-like in the defective ones. The Ge vacancy splits the Fermi surface more than the Fe vacancy. The Heisenberg exchange between nearest Fe pairs is ferromagnetic in pristine FeGe. This Fe-Fe interaction remains ferromagnetic, albeit a slight decrease in strength, in the presence of a Fe vacancy. In contrast, a Ge vacancy in FeGe induces anti-ferromagnetism between nearest Fe pairs. By including spin-orbit coupling effects, we find that the DM interaction of defective FeGe is reversed in sign, and it is more uniform in strength along the three highly symmetric directions, relative to that in pristine FeGe. All in all, the versatility of FeGe makes it an excellent functional material, especially in data storage and spintronics applications.

  12. Exchange and Dzyaloshinskii-Moriya interactions in bulk FeGe: Effects of atomic vacancies

    Science.gov (United States)

    Loh, G. C.; Gan, C. K.

    2017-05-01

    We examine the effects of atomic vacancies on the (1) spin interaction, and (2) electronic character in the cubic B20 chiral magnet FeGe. For the former, Heisenberg exchange and Dzyaloshinskii-Moriya (DM) interactions are studied. The latter is done via a particular Wannier flavor of the Hamiltonian in the form of maximally-localized Wannier functions (MLWFs). Using first-principles calculations based on full-potential linearized augmented plane-wave (FLAPW)-based density functional theory (DFT), the spin order of bulk FeGe, in its pristine form, and with a Fe (Fe75%Ge100%) or Ge vacancy (Fe100%Ge75%) is investigated. Despite the presence of vacancies, the ground state of FeGe remains helimagnetic, i.e. spin spirals in FeGe are fairly robust. The energetic stability of FeGe increases in the presence of the vacancies. The spiral size is increased by approximately 40%, suggesting that vacancies can be introduced to manipulate the chiral order. The vacancies lift the band degeneracy in the valence manifold of the Wannier-interpolated band structures. Only the spin-down Fermi surfaces are substantially different between the pristine and defective FeGe; it is electron-like in the pristine case, but largely hole-like in the defective ones. The Ge vacancy splits the Fermi surface more than the Fe vacancy. The Heisenberg exchange between nearest Fe pairs is ferromagnetic in pristine FeGe. This Fe-Fe interaction remains ferromagnetic, albeit a slight decrease in strength, in the presence of a Fe vacancy. In contrast, a Ge vacancy in FeGe induces anti-ferromagnetism between nearest Fe pairs. By including spin-orbit coupling effects, we find that the DM interaction of defective FeGe is reversed in sign, and it is more uniform in strength along the three highly symmetric directions, relative to that in pristine FeGe. All in all, the versatility of FeGe makes it an excellent functional material, especially in data storage and spintronics applications.

  13. Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications

    OpenAIRE

    Gassenq, Alban; Guilloy, Kevin; Pauc, Nicolas; Rouchon, Denis; Widiez, Julie; Rothman, Johan; Hartmann, Jean-Michel; Chelnokov, Alexei; Reboud, Vincent; Calvo, Vincent

    2017-01-01

    Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice mismatch. In this work, we have developed a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate. Traction arms can be then partially etched to keep only localized strained-Ge micro-blocks. Large tunable uniaxial stress...

  14. Laser desorption ionization time-of-flight mass spectrometry of Ge-As-Te chalcogenides.

    Science.gov (United States)

    Šútorová, Katarína; Hawlová, Petra; Prokeš, Lubomír; Němec, Petr; Boidin, Rémi; Havel, Josef

    2015-03-15

    Ge(x)As(y)Te(z) glasses have a broad window of optical transparency and high refractive index which make them promising for applications in the infrared region. The aim of this work is to reveal structural motifs which could be present during the fabrication of Ge-As-Te thin films by plasma deposition techniques; such knowledge is important for the optimization of thin film growth. Mass spectra were acquired using a laser desorption ionization time-of-flight (LDI-TOF) mass spectrometer equipped with a nitrogen laser (337 nm) coupled with a quadrupole ion trap, and recorded in positive and negative ion reflectron modes. XRD, SEM (EDX) and Raman spectroscopy were also used for the characterization of Ge-As-Te bulk or powdered samples. Bulk Ge(x)As(y)Te(z) samples (x = 10-20%, y = 20-60%, z = 30-70%) were synthesized. LDI-MS of Ge-As-Te powders provided evidence for the formation of both positively and negatively charged clusters, whose stoichiometry was determined as Te(n)(+/-) (n = 1-4), Te(5)(+), binary AsTe(n)(+/-) (n = 1-3), GeTe(n)(+/-) (n = 1-3), As(2)Te(+/-), As(2)Te(3)(+), As(3)Te(+), AsTe(4) (+), Ge(2)H(6) (+/-), ternary GeAsTe(+), GeAsTe(2)(+/-), GeAsH5 (+), GeAsH(6)(+), GeAsH(12)(+), and tertiary GeAsTeH(5)(-), GeAsTeH(8)(-), GeAsTe(2)H(3) (+/-). The local structure of Gex Asy Tez materials is at least partly different from that of species identified in plasma by mass spectrometry, as deduced from Raman scattering spectroscopy analysis. However, LDI-TOFMS was found to be a suitable technique for the partial structure characterization of Ge-As-Te bulk samples and especially for the identification of the structural motifs present in the plasma during the preparation of the corresponding thin films. Copyright © 2015 John Wiley & Sons, Ltd.

  15. Commissioning of the 123 MeV injector for 12 GeV CEBAF

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yan [Jefferson Lab., Newport News, VA (United States); Hofler, Alicia S. [Jefferson Lab., Newport News, VA (United States); Kazimi, Reza [Jefferson Lab., Newport News, VA (United States)

    2015-09-01

    The upgrade of CEBAF to 12GeV included modifications to the injector portion of the accelerator. These changes included the doubling of the injection energy and relocation of the final transport elements to accommodate changes in the CEBAF recirculation arcs. This paper will describe the design changes and the modelling of the new 12GeV CEBAF injector. Stray magnetic fields have been a known issue for the 6 GeV CEBAF injector, the results of modelling the new 12GeV injector and the resulting changes implemented to mitigate this issue are described in this paper. The results of beam commissioning of the injector are also presented.

  16. Epitaxial Technologies for SiGeSn High Performance Optoelectronic Devices

    Science.gov (United States)

    2015-04-29

    includes i) Growth of mid-IR GeSn/SiGeSn materials using Ultra-high- vacuum Chemical Vapor Deposition , ii) In-depth characterizations of GeSn materials...shrinkage has been observed in heavily doped n-type samples. GeSn samples have been fabricated into photoconductive detectors, avalanche photo diodes, and...low temperatures using two different Sn precursors (SnCl4 and SnD4) via a cold-wall ultra-high-vacuum chemical-vapor- deposition system (UHV- CVD

  17. Next Generation, Si-Compatible Materials and Devices in the Si-Ge-Sn System

    Science.gov (United States)

    2015-10-09

    Photoluminescence from Ge1-x-ySixSny, ternaries and LEDs: Synthesis of light emitting Ge1-x-ySixSny, materials with tunable wavelengths over a wide range in the...AFRL-AFOSR-VA-TR-2016-0044 Next generation, Si-compatible materials and devices in the Si-Ge-Sn system John Kouvetakis ARIZONA STATE UNIVERSITY Final...4. TITLE AND SUBTITLE Next generation, Si-compatible materials and devices in the Si-Ge-Sn system 5a. CONTRACT NUMBER FA9550-12-1-0208 5b. GRANT

  18. Search for Chargino and Neutralino Production at $\\sqrt{s} = 189 GeV$ at LEP

    CERN Document Server

    Abbiendi, G.; Alexander, G.; Allison, John; Anderson, K.J.; Anderson, S.; Arcelli, S.; Asai, S.; Ashby, S.F.; Axen, D.; Azuelos, G.; Ball, A.H.; Barberio, E.; Barlow, Roger J.; Batley, J.R.; Baumann, S.; Bechtluft, J.; Behnke, T.; Bell, Kenneth Watson; Bella, G.; Bellerive, A.; Bentvelsen, S.; Bethke, S.; Betts, S.; Biebel, O.; Biguzzi, A.; Bloodworth, I.J.; Bock, P.; Bohme, J.; Boeriu, O.; Bonacorsi, D.; Boutemeur, M.; Braibant, S.; Bright-Thomas, P.; Brigliadori, L.; Brown, Robert M.; Burckhart, H.J.; Capiluppi, P.; Carnegie, R.K.; Carter, A.A.; Carter, J.R.; Chang, C.Y.; Charlton, David G.; Chrisman, D.; Ciocca, C.; Clarke, P.E.L.; Clay, E.; Cohen, I.; Conboy, J.E.; Cooke, O.C.; Couchman, J.; Couyoumtzelis, C.; Coxe, R.L.; Cuffiani, M.; Dado, S.; Dallavalle, G.Marco; Dallison, S.; Davis, R.; De Jong, S.; de Roeck, A.; Dervan, P.; Desch, K.; Dienes, B.; Dixit, M.S.; Donkers, M.; Dubbert, J.; Duchovni, E.; Duckeck, G.; Duerdoth, I.P.; Estabrooks, P.G.; Etzion, E.; Fabbri, F.; Fanfani, A.; Fanti, M.; Faust, A.A.; Feld, L.; Ferrari, P.; Fiedler, F.; Fierro, M.; Fleck, I.; Frey, A.; Furtjes, A.; Futyan, D.I.; Gagnon, P.; Gary, J.W.; Gaycken, G.; Geich-Gimbel, C.; Giacomelli, G.; Giacomelli, P.; Gibson, W.R.; Gingrich, D.M.; Glenzinski, D.; Goldberg, J.; Gorn, W.; Grandi, C.; Graham, K.; Gross, E.; Grunhaus, J.; Gruwe, M.; Hajdu, C.; Hanson, G.G.; Hansroul, M.; Hapke, M.; Harder, K.; Harel, A.; Hargrove, C.K.; Harin-Dirac, M.; Hauschild, M.; Hawkes, C.M.; Hawkings, R.; Hemingway, R.J.; Herten, G.; Heuer, R.D.; Hildreth, M.D.; Hill, J.C.; Hobson, P.R.; Hocker, James Andrew; Hoffman, Kara Dion; Homer, R.J.; Honma, A.K.; Horvath, D.; Hossain, K.R.; Howard, R.; Huntemeyer, P.; Igo-Kemenes, P.; Imrie, D.C.; Ishii, K.; Jacob, F.R.; Jawahery, A.; Jeremie, H.; Jimack, M.; Jones, C.R.; Jovanovic, P.; Junk, T.R.; Kanaya, N.; Kanzaki, J.; Karlen, D.; Kartvelishvili, V.; Kawagoe, K.; Kawamoto, T.; Kayal, P.I.; Keeler, R.K.; Kellogg, R.G.; Kennedy, B.W.; Kim, D.H.; Klier, A.; Kobayashi, T.; Kobel, M.; Kokott, T.P.; Kolrep, M.; Komamiya, S.; Kowalewski, Robert V.; Kress, T.; Krieger, P.; von Krogh, J.; Kuhl, T.; Kyberd, P.; Lafferty, G.D.; Landsman, H.; Lanske, D.; Lauber, J.; Lawson, I.; Layter, J.G.; Lellouch, D.; Letts, J.; Levinson, L.; Liebisch, R.; Lillich, J.; List, B.; Littlewood, C.; Lloyd, A.W.; Lloyd, S.L.; Loebinger, F.K.; Long, G.D.; Losty, M.J.; Lu, J.; Ludwig, J.; Lui, D.; Macchiolo, A.; Macpherson, A.; Mader, W.; Mannelli, M.; Marcellini, S.; Marchant, T.E.; Martin, A.J.; Martin, J.P.; Martinez, G.; Mashimo, T.; Mattig, Peter; McDonald, W.John; McKenna, J.; Mckigney, E.A.; McMahon, T.J.; McPherson, R.A.; Meijers, F.; Mendez-Lorenzo, P.; Merritt, F.S.; Mes, H.; Meyer, I.; Michelini, A.; Mihara, S.; Mikenberg, G.; Miller, D.J.; Mohr, W.; Montanari, A.; Mori, T.; Nagai, K.; Nakamura, I.; Neal, H.A.; Nisius, R.; O'Neale, S.W.; Oakham, F.G.; Odorici, F.; Ogren, H.O.; Okpara, A.; Oreglia, M.J.; Orito, S.; Pasztor, G.; Pater, J.R.; Patrick, G.N.; Patt, J.; Perez-Ochoa, R.; Petzold, S.; Pfeifenschneider, P.; Pilcher, J.E.; Pinfold, J.; Plane, David E.; Poffenberger, P.; Poli, B.; Polok, J.; Przybycien, M.; Quadt, A.; Rembser, C.; Rick, H.; Robertson, S.; Robins, S.A.; Rodning, N.; Roney, J.M.; Rosati, S.; Roscoe, K.; Rossi, A.M.; Rozen, Y.; Runge, K.; Runolfsson, O.; Rust, D.R.; Sachs, K.; Saeki, T.; Sahr, O.; Sang, W.M.; Sarkisian, E.K.G.; Sbarra, C.; Schaile, A.D.; Schaile, O.; Scharff-Hansen, P.; Schieck, J.; Schmitt, S.; Schoning, A.; Schroder, Matthias; Schumacher, M.; Schwick, C.; Scott, W.G.; Seuster, R.; Shears, T.G.; Shen, B.C.; Shepherd-Themistocleous, C.H.; Sherwood, P.; Siroli, G.P.; Skuja, A.; Smith, A.M.; Snow, G.A.; Sobie, R.; Soldner-Rembold, S.; Spagnolo, S.; Sproston, M.; Stahl, A.; Stephens, K.; Stoll, K.; Strom, David M.; Strohmer, R.; Surrow, B.; Talbot, S.D.; Taras, P.; Tarem, S.; Teuscher, R.; Thiergen, M.; Thomas, J.; Thomson, M.A.; Torrence, E.; Towers, S.; Trefzger, T.; Trigger, I.; Trocsanyi, Z.; Tsur, E.; Turner-Watson, M.F.; Ueda, I.; Van Kooten, Rick J.; Vannerem, P.; Verzocchi, M.; Voss, H.; Wackerle, F.; Wagner, A.; Waller, D.; Ward, C.P.; Ward, D.R.; Watkins, P.M.; Watson, A.T.; Watson, N.K.; Wells, P.S.; Wermes, N.; Wetterling, D.; White, J.S.; Wilson, G.W.; Wilson, J.A.; Wyatt, T.R.; Yamashita, S.; Zacek, V.; Zer-Zion, D.

    2000-01-01

    A search for charginos and neutralinos, predicted by supersymmetric theories, is performed using a data sample of 182.1 pb-1 taken at a centre-of-mass energy of 189 GeV with the OPAL detector at LEP. No evidence for chargino or neutralino production is found. Upper limits on chargino and neutralino pair production cross-sections are obtained as a function of the chargino mass, the lightest neutralino mass and the second lightest neutralino mass. Within the Constrained Minimal Supersymmetric Standard Model framework, and for a chargino - neutralino mass difference of more than 5 GeV, the 95% confidence level lower limits on the chargino mass are 93.6 GeV for tan{beta} = 1.5 and 94.1 GeV for tan{beta} = 35. These limits are obtained assuming a universal scalar mass m_0 > 500 GeV. The corresponding limits for all m_0 are 78.0 and 71.7 GeV. The 95% confidence level lower limits on the lightest neutralino mass, valid for any value of tan{beta} are 32.8 GeV for m_0 > 500 GeV and 31.6 GeV for all m_0.

  19. Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Kai; Gong, Qian; Zhou, Haifei [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Kang, Chuanzhen [School of Physical Engineering, Qufu Normal University, Qufu 273165 (China); Yan, Jinyi; Liu, Qingbo [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Wang, Shumin, E-mail: shumin@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296 (Sweden)

    2014-02-01

    We investigated the growth of tensile-strained Ge on InAlP metamorphic templates by gas source molecular beam epitaxy. Good control of biaxial tensile strain in the Ge layer was demonstrated in the range of 0.5–2.0% by adjusting the In content of the metamorphic template. It was found that the growth of Ge was layer-by-layer (2D) even under high tensile strain of 2.0%, resulting in a smooth surface with roughness less than 1.5 nm. Hall results showed that the electron mobility of Ge increased monotonically with tensile strain.

  20. Interfacial Structure and Chemistry of GaN on Ge(111)

    Science.gov (United States)

    Zhang, Siyuan; Zhang, Yucheng; Cui, Ying; Freysoldt, Christoph; Neugebauer, Jörg; Lieten, Ruben R.; Barnard, Jonathan S.; Humphreys, Colin J.

    2013-12-01

    The interface of GaN grown on Ge(111) by plasma-assisted molecular beam epitaxy is resolved by aberration corrected scanning transmission electron microscopy. A novel interfacial structure with a 5∶4 closely spaced atomic bilayer is observed that explains why the interface is flat, crystalline, and free of GeNx. Density functional theory based total energy calculations show that the interface bilayer contains Ge and Ga atoms, with no N atoms. The 5∶4 bilayer at the interface has a lower energy than a direct stacking of GaN on Ge(111) and enables the 5∶4 lattice-matching growth of GaN.