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Sample records for walter schottky institute

  1. Walter Schottky. Atom-theorist and electrotechnician. His life and work until the year 1941; Walter Schottky. Atomtheoretiker und Elektrotechniker. Sein Leben und Werk bis ins Jahr 1941

    Energy Technology Data Exchange (ETDEWEB)

    Serchinger, Reinhard W.

    2008-07-01

    In this first scientific biography of Walter Schottky at the one hand the origin of his scientific and technical works is reproduced and put in the physical-historical connection of his time. At the other hand his special role in the research strategy of the Siemens company becomes clear, which could in the framework of this research project for the first time be identified. Also psychological aspects were essentially included in the study, because else the binding of the particular more corresponding to an ivory-tower than and industrial physicist personality of Schottky to the Siemens trust not would be understandable. The example of Walter Schottky shows the importance of the researching individuum, which until today undoubtly can be an important element of company-internal innovation processes not only contrarily but also in the transition to scientific team work.

  2. Development of Schottky diode detectors at Research Institute of Electrical Communication, Tohoku University

    International Nuclear Information System (INIS)

    Mizuno, K.; Ono, S.; Suzuki, T.; Daiku, Y.

    1982-01-01

    Schottky diode detectors are widely used as fast, sensitive submillimeter detectors in plasma physics, radio astronomy, frequency standards and so on. In this paper, the research on submillimeter Schottky diodes at Tohoku University is described. A brief description is given on the theoretical examination of diode parameters for video detection in design and on the fabrication of n/n + GaAs Schottky diode chips. Antennas for Schottky barrier diodes are discussed. Three types of antenna structures have been proposed, and used for whisker-contacted Schottky diodes so far. These are compared with each other for their frequency response and gain. The bicone type antenna is promising because of its larger frequency response, but the optimum design for this type of antenna has not yet sufficiently been obtained. As the application of Schottky barrier diodes, the intensity modulation of submillimeter laser and a quasi-optically coupled harmonic mixer have been studied. The modulation degree of about 4 % for HCN laser output has been so far obtained at the maximum modulation frequency of 2 GHz. Since 1976, a quasi-optically coupled harmonic mixer has been used with a Schottky diode in harmonic mixing between microwaves, millimeter waves, and submillimeter waves. (Wakatsuki, Y.)

  3. Walter Max Dale (formerly Deutsch) (1894-1969): pioneer and eminent radiobiochemist at the Christie Hospital and Holt Radium Institute, Manchester.

    Science.gov (United States)

    Shreeve, David R

    2010-05-01

    The political upheaval in Germany in 1933 and subsequent movement of medical scholars with the support of the Rockefeller Foundation allowed Manchester to benefit from the arrival of Dr Walter Deutsch, later known as Dr Walter Dale. His research background enabled him to develop a radiobiochemistry laboratory at the Christie Hospital and Holt Radium Institute where he became a world authority on the effects of X-rays on enzymes and also the protective effect of additional solutes. In 1959 he initiated and then edited the International Journal of Radiation Biology. By the time of his retirement in 1962 the strength of his research resulted in his laboratory being recognized by the Medical Research Council.

  4. Children’s Hospital of Pittsburgh and Diabetes Institute of the Walter Reed Health Care System Genetic Screening in Diabetes: Candidate Gene Analysis for Diabetic Retinopathy

    Science.gov (United States)

    2010-05-01

    Screening in Diabetes : Candidate Gene Analysis for Diabetic Retinopathy PRINCIPAL INVESTIGATOR: Robert A. Vigersky, COL MC CONTRACTING ORGANIZATION... Diabetes Institute of the Walter Reed Health Care System Genetic Screening in Diabetes : Candidate Gene Analysis for Diabetic Retinopathy 5c. PROGRAM... diabetic  neuropathy, and  diabetic   retinopathy .  This was an observational study in which the investigators obtained DNA samples from the blood of

  5. Walter Greiner: In Memoriam

    Science.gov (United States)

    Zen Vasconcellos, César; Coelho, Helio T.; Hess, Peter Otto

    Walter Greiner (29 October 1935 - 6 October 2016) was a German theoretical physicist. His scientific research interests include the thematic areas of atomic physics, heavy ion physics, nuclear physics, elementary particle physics (particularly quantum electrodynamics and quantum chromodynamics). He is most known in Germany for his series of books in theoretical physics, but he is also well known around the world. Greiner was born on October 29, 1935, in Neuenbau, Sonnenberg, Germany. He studied physics at the University of Frankfurt (Goethe University in Frankfurt Am Main), receiving in this institution a BSci in physics and a Master’s degree in 1960 with a thesis on plasma-reactors, and a PhD in 1961 at the University of Freiburg under Hans Marshal, with a thesis on the nuclear polarization in μ-mesic atoms. During the period of 1962 to 1964 he was assistant professor at the University of Maryland, followed by a position as research associate at the University of Freiburg, in 1964. Starting in 1965, he became a full professor at the Institute for Theoretical Physics at Goethe University until 2003. Greiner has been a visiting professor to many universities and laboratories, including Florida State University, the University of Virginia, the University of California, the University of Melbourne, Vanderbilt University, Yale University, Oak Ridge National Laboratory and Los Alamos National Laboratory. In 2003, with Wolf Singer, he was the founding Director of the Frankfurt Institute for Advanced Studies (FIAS), and gave lectures and seminars in elementary particle physics. He died on October 6, 2016 at the age of 80. Walter Greiner was an excellent teacher, researcher, friend. And he was a great supporter of the series of events known by the acronyms IWARA - International Workshop on Astronomy and Relativistic Astrophysics, STARS - Caribbean Symposium on Cosmology, Gravitation, Nuclear and Astroparticle Physics, and SMFNS - International Symposium on Strong

  6. A perspective on 10-years HTS experience at the Walter and Eliza Hall Institute of Medical Research - eighteen million assays and counting.

    Science.gov (United States)

    Lackovic, Kurt; Lessene, Guillaume; Falk, Hendrik; Leuchowius, Karl-Johan; Baell, Jonathan; Street, Ian

    2014-03-01

    The Walter and Eliza Hall Institute of Medical Research (WEHI) is Australia's longest serving medical research institute. WEHI's High Throughput Screening (HTS) Facility was established in 2003 with $5 million of infrastructure funds invested by WEHI, and the Victorian State Government's Strategic Technology Initiative through Bio21 Australia Ltd. The Facility was Australia's first truly academic HTS facility and was one of only a handful operating in publicly funded institutions worldwide at that time. The objectives were to provide access to enabling HTS technologies, such as assay design, liquid handling automation, compound libraries and expertise to promote translation of basic research in a national setting that has a relatively young biotech sector and does not have a big Pharma research presence. Ten years on and the WEHI HTS Facility has participated in over 92 collaborative projects, generated over 18 million data points, and most importantly, projects that began in the Facility have been commercialized successfully (due to strong ties with Business Development and emphasis on intellectual property management) and now have molecules progressing in clinical trials.

  7. Walter Benjamins Berlin

    DEFF Research Database (Denmark)

    Walter Benjamin (1892-1940). Tolkning af alle 33 kapitler i Benjamins bybarndomserindringer fra Berlin i begyndelsen af det 20. århundrede.......Walter Benjamin (1892-1940). Tolkning af alle 33 kapitler i Benjamins bybarndomserindringer fra Berlin i begyndelsen af det 20. århundrede....

  8. Kodu kaitseks / Hannes Walter

    Index Scriptorium Estoniae

    Walter, Hannes, 1952-2004

    2012-01-01

    Kõne Eesti Muinsuskaitse Seltsi ja Eesti Akadeemilise Sõjaajaloo Seltsi korraldatud aktusel "Kodu kaitseks!" Tallinna Linnahallis 14. detsembril 1988. a. Vabadussõjast, selle tähendusest õppetundidest. Poleemika: Väitlus / Margus Laidre, Tõnu Tannberg, Hannes Walter, samas, lk. 332-338

  9. Hess, Prof. Walter Rudolf

    Indian Academy of Sciences (India)

    Home; Fellowship. Fellow Profile. Elected: 1966 Honorary. Hess, Prof. Walter Rudolf Nobel Laureate (Medicine) - 1949. Date of birth: 17 March 1881. Date of death: 12 August 1973. YouTube; Twitter; Facebook; Blog. Academy News. IAS Logo. 29th Mid-year meeting. Posted on 19 January 2018. The 29th Mid-year meeting ...

  10. Haworth, Prof. Walter Norman

    Indian Academy of Sciences (India)

    Home; Fellowship. Fellow Profile. Elected: 1948 Honorary. Haworth, Prof. Walter Norman Nobel Laureate (Chemistry) - 1937. Date of birth: 19 March 1883. Date of death: 19 March 1950. YouTube; Twitter; Facebook; Blog. Academy News. IAS Logo. 29th Mid-year meeting. Posted on 19 January 2018. The 29th Mid-year ...

  11. Walter Ouro Alves

    Directory of Open Access Journals (Sweden)

    Revista Chasqui

    2015-01-01

    Full Text Available CIESPAL y la revista Chasqui, órgano de difusión de este Centro, unen su pesar al de la familia del compañero, amigo y maestro Walter Ouro Alves. Al rendir un homenaje de admiración y gratitud por su honesta y prolífica labor, C1ESPAL recomienda su nombre como impulsor de la democratización de las comunicaciones en América Latina.

  12. Walter Scandale honoured

    CERN Multimedia

    2009-01-01

    On 9 December 2008, Walter Scandale, a member of the EN Department, received the decoration of Knight of the Order of Merit of the Italian Republic, one of Italy’s highest decorations. He was awarded the medal by the Consul-General of Italy in Geneva on behalf of the President of the Italian Republic in recognition of his services to Italy in the field of science.

  13. Vae Victis : Esimene juhtum : Walter Reder / Hannes Walter

    Index Scriptorium Estoniae

    Walter, Hannes, 1952-2004

    2004-01-01

    Teises maailmasõjas Saksamaa poolel võidelnud austerlasest Walter Rederist, kes mõisteti 1951. aastal Bolognas kommunistide korraldatud nn Stalini Venemaa stiilis kohtulavastuse tulemusena süüdi sõjaroimarina

  14. Mälestusi Walter Masingust

    Index Scriptorium Estoniae

    2006-01-01

    Erich Asumäe, Ahto Tihkani, Aivi Rossi, Aigar Saliste, Joann Lillemägi, Henno Viili meenutusi professor Walter Masingust, kes aastatel 1956-1959 oli EOQC-i (Euroopa Kvaliteedikontrolli organisatsioon) president

  15. A Propaedeutic to Walter Benjamin

    Science.gov (United States)

    Socher, David

    2009-01-01

    The Emerson College Web site on Walter Benjamin's essay "The Work of Art in an Age of Mechanical Reproduction" nicely animates some ideas of the essay. One such idea is the following: "To an ever greater degree the work of art reproduced becomes the work of art designed for reproducibility." When Benjamin wrote this essay and this maxim, Norman…

  16. Pergeseran Konsep Berarsitektur Walter Gropius

    OpenAIRE

    Rahmanina, Nur

    2009-01-01

    Tulisan ini akan membahas mengenai pengaruh professional environment terhadap arsitek dankonsepnya, sebagai objek pengkajian adalah Walter Gropius, seorang arsitek yang dikenal mengalamibeberapa kali pergeseran konsep dalam berarsitektur yang terjadi tidak dalam waktu yang lama.Pergeseran konsep berarsitektur Grapius dikaji untuk memperoleh gambaran penyebab terjadinyapergeseran tersebut dan adakah kemungkinan hal tersebut terjadi karena pengaruh unsur‐unsur di dalam professional environment.

  17. Obituary: Walter Alexander Feibelman, 1930-2004

    Science.gov (United States)

    Oergerle, William

    2005-12-01

    Walter Alexander Feibelman, 79, an astronomer who discovered the E-ring of Saturn, died of a heart attack 19 November 2004 at his home at Riderwood Village in Silver Spring, Maryland. Walter was born 30 October 1925 in Berlin, Germany to Bernard and Dora Feibelman. He came to the United States with his parents in 1941. They were some of the last German Jews to flee Nazi Germany. Years later, he reported his experiences in an account contributed to the U.S. Holocaust Memorial Museum. As a youth, he worked at a cleaning shop and as a soda jerk before taking a course in tool and die making. He worked at the Abbey Photo Corp. in New York and in a model-making firm, where he constructed models of aircraft for use in identification courses by the Army Air Forces. After high school, he attended the Carnegie Institute of Technology and received his BS degree in 1956. Until 1969, he was a research scientist at the University of Pittsburgh. While working as an assistant research professor in physics and astronomy at the University of Pittsburgh in 1967, he examined a photo of Saturn taken a year earlier at the university's Allegheny Observatory. The E-ring -- unlike the bright main rings, A, B, C, D and F -- is faint and not easily spotted. He paired his observation with calculations and announced his discovery, which remained unconfirmed until the Pioneer 11 flyby in 1979. Walter joined the Optical Astronomy Division of Goddard Space Flight Center in Greenbelt in 1969, and worked there until 2002, when he became an emeritus astronomer at NASA. He became associated with the International Ultraviolet Explorer project, and worked on developing detectors for the orbiting observatory's spectrograph. The project turned out to be one of NASA's most successful observatories, operating from 1978 to 1996. In his scientific career, he published more than 200 refereed articles, mainly on hot stars and planetary nebulae. He also wrote papers in the fields of photography, spectroscopy

  18. Walter Pater and the Language of Sculpture

    DEFF Research Database (Denmark)

    Østermark-Johansen, Lene

    Walter Pater and the Language of Sculpture is the first monograph to discuss the Victorian critic Walter Pater's attitude to sculpture. It brings together Pater's aesthetic theories with his theories on language and writing, to demonstrate how his ideas of the visual and written language...... the idea of rivalry (paragone) more broadly, examining Pater's concern with positioning himself as an art critic in the late Victorian art world. Situating Pater within centuries of European aesthetic theories as never before done, Walter Pater and the Language of Sculpture throws new light...

  19. SCHOTTKY MEASUREMENTS DURING RHIC 2000

    International Nuclear Information System (INIS)

    CAMERON, P.; CUPOLO, J.; DEGEN, C.; HAMMONS, L.; KESSELMAN, M.; LEE, R.; MEYER, A.; SIKORA, R.

    2001-01-01

    The 2GHz Schottky system was a powerful diagnostic during RHIC 2000 commissioning. A continuous monitor without beam excitation, it provided betatron tune, chromaticity, momentum spread relative emittance, and synchrotron tune. It was particularly useful during transition studies. In addition, a BPM was resonated at 230MHz for Schottky measurements

  20. Summary of Steve Jobs, Walter Isaacson

    CERN Document Server

    Reader, Capitol

    2013-01-01

    This ebook consists of a summary of the ideas, viewpoints and facts presented by Walter Isaacson in his book "Steve Jobs". This summary offers a concise overview of the entire book in less than 30 minutes reading time. However this work does not replace in any case Walter Isaacson's book.Isaacson reveals the story of Steve Jobs career, which is a tale filled with lessons about innovation, character, leadership and being true to one's own values.

  1. El enigma de Walter Benjamin

    Directory of Open Access Journals (Sweden)

    Javier Sigüenza

    2015-06-01

    Full Text Available El siguiente ensayo inicia reconstruyendo el relato de los últimos días de la vida de Walter Benjamin, en el contexto histórico de la Segunda Guerra Mundial, y la existencia de un misterioso manuscrito perdido en su frustrada huida por la frontera franco-española en 1940; en la segunda parte se intenta descifrar la enigmática fisionomía del pensador berlinés, cuya perspectiva múltiple, tanto en lo teórico como en lo político, lo convierten en un autor incomprendido, pero tremendamente fascinante; en la tercera parte se explora uno de sus textos más herméticos, conocido como las tesis Sobre el concepto de historia, con la intención de poner de manifiesto el carácter crítico de su discurso, como clave para comprender los enigmas del mundo moderno y su necesaria transformación revolucionaria.

  2. Schottky spectra and crystalline beams

    International Nuclear Information System (INIS)

    Pestrikov, D.V.

    1996-01-01

    In this paper we revise the current dependence of the Schottky noise power of a cooled proton beam previously measured at NAP-M. More careful study of experimental data indicates a linear decrease in the inverse Schottky noise power with an increase in the beam intensity (N). The root of this function determines a threshold current which occurs at N = N th ≅1.2 x 10 8 particles. The inspection of measured Schottky spectra shows that this threshold does not correspond to some collective instability of the measured harmonic of the linear beam density. The found value of N th does not depend on the longitudinal beam temperature. For the case of NAP-M lattice, the study of the spectral properties of the Schottky noise in the crystalline string predicts the current dependence of the equilibrium momentum spread of the beam, which qualitatively agrees with that, recalculated from the NAP-M data. (orig.)

  3. Particle detectors based on InP Schottky diodes

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan

    2012-01-01

    Roč. 10, č. 7 (2012), C100051-C100055 ISSN 1748-0221 R&D Projects: GA MŠk(CZ) OC10021; GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Particle detector * High purity InP layer * Schottky diode Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.869, year: 2011

  4. The Bauhaus Artist-Teacher: Walter Gropius's Philosophy of Art Education

    Science.gov (United States)

    Daichendt, G. James

    2010-01-01

    Walter Gropius built the internationally known movement and art school known as the Bauhaus between the years 1919 and 1928. This new institution was born by combining two fledging schools: the Weimar School of Arts and Crafts with the Weimar Academy of Fine Arts. In this new academy all media were regarded as acceptable as Gropius sought to…

  5. Walter van der Cruijsen / Walter van der Cruijsen ; interv. Tilman Baumgärtel

    Index Scriptorium Estoniae

    Cruijsen, Walter van der

    2006-01-01

    1997. a. Berliinis tehtud intervjuu hollandi maali, võrgu- ja installatsioonikunstniku Walter van der Cruijseniga (sünd. 1958), kes kuulub Euroopa ühe edukama 1990-ndatel loodud võrguprojekti De Digitale Stad Amsterdam loojate hulka

  6. Children, Redemption and Remembrance in Walter Benjamin

    Science.gov (United States)

    Jessop, Sharon

    2013-01-01

    Walter Benjamin wrote extensively on children and childhood, though this aspect of his work has hitherto received scant attention despite continuing and growing interest in his thought. This article makes explicit the connection between his acute observations of childhood and his distinctive messianic philosophy. The twin aspects of redemption in…

  7. Walter Frank Raphael Weldon (1860–1906)

    Indian Academy of Sciences (India)

    the second child of Walter Weldon and Anne Cotton. He had ... dergo a regular school education till the age of thirteen, although he was informally taught by .... nent of the importance of discontinuous variations in evolution, and an opponent of ...

  8. Obituary: Walter G. Egan, 1923-2003

    Science.gov (United States)

    Hilgeman, Theodore

    2009-01-01

    Walter G. Egan, a scientist and engineer with a professional life spanning well over half a century, died on 3 November 2003. Born to Caroline and George Egan on 12 October 1923 in New York City, Egan studied Electrical Engineering at the City College of New York from 1941 until 1943 when he was called to active duty in World War II, switching from enlisted reserve status. During the war, he served honorably in both the Signal Corps and the Medical Corps. Following his discharge in 1946, he resumed his college studies, obtaining a BEE in 1949 from City College of New York, an MA in Physics in 1951 from Columbia University, and a PhD in Solid State Physics in 1960 from the Polytechnic Institute of Brooklyn. Egan's PhD thesis was "Ferromagnetic Resonance in thin Nickel Films," performed under advisor H. Juretschke. Egan's professional career covered both industry and academia. In the summer of 1942, he worked for the Bruce Engineering Company. From 1957 to 1963, he worked for Ford Instrument Company, a Division of Sperry Rand Corporation, successively as an Engineering Project Supervisor, Assistant Director of Research, and Executive Assistant to the Director of Research. From 1964 to 1986 Egan worked as a Staff Scientist at the Grumman Corporation Corporate Research Center where his pioneering work consisted of research and development of remote sensing equipment and techniques for the remote sensing of terrestrial and space targets and backgrounds. I came to know and work with him during his tenure at the Grumman Corporation, where we co-authored many papers and a book. His insight into remote sensing engineering and research, shared willingly with younger colleagues, was a major stimulus to my future research in this field. Egan instilled a sense of discipline in publication, so our work could be shared with others in a timely way. This drive to share his knowledge with others also made him an excellent teacher. Subsequently, he held the position of Research

  9. Fluctuations in Schottky barrier heights

    International Nuclear Information System (INIS)

    Mahan, G.D.

    1984-01-01

    A double Schottky barrier is often formed at the grain boundary in polycrystalline semiconductors. The barrier height is shown to fluctuate in value due to the random nature of the impurity positions. The magnitude of the fluctuations is 0.1 eV, and the fluctuations cause the barrier height measured by capacitance to differ from the one measured by electrical conductivity

  10. Federal president Walter Scheel on nuclear energy

    International Nuclear Information System (INIS)

    Scheel, W.

    1977-01-01

    On the occasion of the award of the Theodor-Heuss-Prize in Munich on February 11th, 1977, the President of the Federal Republic Walter Scheel commented on the citizens' contribution to basic values. In doing this the President also spoke about the peaceful utilization of nuclear energy and stated finally: 'It is wrong to see only the risk of nuclear energy, to discuss only this. We must realize that in many parts of our society we have ushered in developments which involve similar, partly even bigger danger and risk than nuclear energy. And we must be prepared to face those risks everywhere.' (orig./HP) [de

  11. Jim Walter Resources installs new overland conveyor

    Energy Technology Data Exchange (ETDEWEB)

    Fiscor, S.

    2008-12-15

    Embarking on a major expansion plan, the company is constructing a new additional overland conveyor coal to a recently refurbished prep plant. Jim Walter Resources recently invested $20 million in a new 5-mile overland conveyor system to haul coal from the No.7 deep coal mine in Alabama to the No.5 coal preparation plant. The size of the No.7 mine was effectively doubled. The article describes how this expansion move was decided upon and describes the design and installation of the new conveyor which spans approximately 5 miles. 4 photos.

  12. Walter Pater and the Language of Sculpture

    DEFF Research Database (Denmark)

    Østermark-Johansen, Lene

    are closely linked. Going beyond Pater's views on sculpture as an art form, this study traces the notion of relief (rilievo) and hybrid form in Pater, and his view of the writer as sculptor, a carver in language. Alongside her treatment of rilievo as a pervasive trope, Lene Østermark-Johansen also employs...... the idea of rivalry (paragone) more broadly, examining Pater's concern with positioning himself as an art critic in the late Victorian art world. Situating Pater within centuries of European aesthetic theories as never before done, Walter Pater and the Language of Sculpture throws new light...

  13. The essayistic style of Walter Benjamin:

    OpenAIRE

    Ceserani, Remo

    2010-01-01

    This paper examines the peculiar essayistic style of Walter Benjamin. All of the various genres of his writing have an allegorical and surrealistic quality, with hidden and private (and essayistic) meanings, but also with a prophetic, hallucinatory tension. Članek obravnava tipični esejistični stil Walterja Benjamina. Za vse žanre njegovega pisanja je značilna alegoričnost in surrealističnost s skritimi ter zasebnimi (in esejističnimi) pomeni, a tudi s preroško halucinatorično napetostjo....

  14. An Interview with Dr. Walter Lear

    Directory of Open Access Journals (Sweden)

    The Editors

    2009-03-01

    Full Text Available In this issue of the English version of Social Medicine we are publishing the first of several pamphlets loaned to us by the US Health Activism History Collection. To introduce this collection we travelled to Philadelphia on June 18, 2008 to interview Dr. Walter J. Lear. Dr Lear, born in 1923, is the person responsible for the collection. In a wide-ranging interview in his home Dr. Lear discussed his personal background, the origins and purpose of the collection, the impact of the McCarthy period on the US health left, as well as his vision for the future.

  15. Schottky signal analysis: tune and chromaticity computation

    CERN Document Server

    Chanon, Ondine

    2016-01-01

    Schottky monitors are used to determine important beam parameters in a non-destructive way. The Schottky signal is due to the internal statistical fluctuations of the particles inside the beam. In this report, after explaining the different components of a Schottky signal, an algorithm to compute the betatron tune is presented, followed by some ideas to compute machine chromaticity. The tests have been performed with offline and/or online LHC data.

  16. Longitudinal Schottky noise of intense beam

    International Nuclear Information System (INIS)

    Pestrikov, D.V.

    1990-01-01

    Some phenomena, which can be observed in the longitudinal Schottky spectra in storage ring with electron cooling as well as some technical details, which can be useful for the models of fitting are reviewed. Results shows that both the spectra and the power of the Schottky noise of the coasting beam are very sensitive to collective behaviour of the beam. This can be used for fitting of Schottky noise measurements and recalculation of beam parameters, parameters of cooling device. 9 refs.; 4 figs

  17. Walter Benjamin ja lugemismõnu / Aija Sakova-Merivee

    Index Scriptorium Estoniae

    Sakova-Merivee, Aija, 1980-

    2014-01-01

    Arvustus: Benjamin, Walter. Lapsepõlv Berliinis 1900. aasta paiku : valik esseid. II / Walter Benjamin ; saksa keelest tõlkinud Mati Sirkel ; koostanud ja järelsõna: Marek Tamm. Tallinn : Kultuurileht, 2014. (Loomingu raamatukogu ; 2014, nr. 9/11)

  18. Walter Rowe Courtenay, Jr. (1933–2014)

    Science.gov (United States)

    Benson, Amy J.

    2016-01-01

    WALTER R. COURTENAY, JR., ichthyologist and retired professor, Florida Atlantic University, Boca Raton, Florida, died in Gainesville, Florida, on 30 January 2014 at age 80. Walt was born in Neenah, Wisconsin, on 6 November 1933, son of Walter and Emily Courtenay. Walt's interest in fish began at a young age as evidenced by a childhood diary in which at 13 years of age he wrote about his first catch—a two-and-a-half pound “pike” from Lake Winnebago. When Walt turned ten, the family moved from Wisconsin to Nashville, Tennessee, the move precipitated by his father accepting a position as pastor of the First Presbyterian Church. During those early days in Nashville, Walt's father would take summers off and travel to Michigan to teach at Camp Miniwanca along the shore of Lake Michigan where father and son honed their angling skills. It was also at that time Walt's father had definite views on what his son should be doing in adult life—in Walt's case it was to become a medical doctor. However, his Woods Hole internship in marine biology and oceanography toward the end of his undergraduate years was a transformative experience for him so much so that he abandoned all ideas of becoming a medical doctor and instead specialized in ichthyology and oceanography. Apart from the inherent interest and opportunities Woods Hole opened to him, being back at the shore of a large body of water, in this case the Atlantic Ocean, was far more interesting than sitting in lectures on organic chemistry. With that, Walt completed his B.A. degree at Vanderbilt University in 1956. In 1960 while in graduate school in Miami, Walt met and married Francine Saporito, and over the next several years had two children, Walter III and Catherine. He went on to receive his M.S. in 1961 from The Rosenstiel School of Marine and Atmospheric Science at the University of Miami on the systematics of the genus Haemulon (grunts) and his Ph.D. degree in 1965 working under his advisor C. Richard

  19. The Death and Life of Walter Benjamin

    Directory of Open Access Journals (Sweden)

    David Kishik

    2013-11-01

    Full Text Available What if Walter Benjamin actually made it to New York as he was escaping the Nazis, settling there for the rest of his long life? What if he was working on a sequel to his Arcades Project, translating his ideas about Paris, capital of the nineteenth century, to his new city and own epoch? And what if I inadvertently discovered the manuscript of this so-called Manhattan Project, and decided to write a study dedicated to the unearthed text? This paper offers a few reflections on, and quotations from, the book that I am currently, truly working on, which is an analysis of a phantom of a book, inspired by a real collection of reflections and quotations that were made in preparation for another book that was also never written.

  20. Walter Benjamin's allegory and the modernity

    Directory of Open Access Journals (Sweden)

    João Batista Pereira

    2013-12-01

    Full Text Available Committed since Classical Antiquity with the rhetoric and the rules of oratory, the allegory was like a displaced metaphor, striving for clarity of speech. That purpose was transfigured throughout the Middle Ages, when its use was linked to decency and morality, a convention which was changed in Romanticism, when it met its demise. From the texts proposed by Walter Benjamin, its existence was perceived as a resource illuminating the aesthetic universe in the social times, a figure of speech tied to the historical context. We adopt in this article a dialectical perspective as a methodological that more accurately illustrates the contours assumed by allegory in modernity. With the light of experiences in a changing world of insecurity in its own values, it is now envisioned as a category indicting of fragmented representation of society, allowing us to understand the limits of literature as a vehicle in critical of reality.

  1. Schottky Noise and Beam Transfer Functions

    Energy Technology Data Exchange (ETDEWEB)

    Blaskiewicz M.; Blaskiewicz M.

    2016-12-01

    Beam transfer functions (BTF)s encapsulate the stability properties of charged particle beams. In general one excites the beam with a sinusoidal signal and measures the amplitude and phase of the beam response. Most systems are very nearly linear and one can use various Fourier techniques to reduce the number of measurements and/or simulations needed to fully characterize the response. Schottky noise is associated with the finite number of particles in the beam. This signal is always present. Since the Schottky current drives wakefields, the measured Schottky signal is influenced by parasitic impedances.

  2. Baudelaire'i Pariis Walter Benjamini esseedes / Vappu Thurlow

    Index Scriptorium Estoniae

    Thurlow, Vappu, 1960-

    2006-01-01

    Marksismi kalduva Walter Benjamini kulturoloogilisest uurimusest, mis keskendub ühiskondlikule ja kultuurielule ning varases staadiumis olevale modernismile, mistõttu saab tema arutluskäikude keskseks kangelaseks Charles Baudelair kui flaneur

  3. Walter Isard's Contributions to Environmental Economics and Ecological Economics

    NARCIS (Netherlands)

    Rose, Adam; Folmer, Henk; Nijkamp, Peter

    This article summarizes Walter Isard's important contributions to environmental economics and ecological economics. The former is the traditional field that incorporates some limited aspects of the environment into neoclassical economic theory, while the latter is a more comprehensive integration of

  4. A public health physician named Walter Leser.

    Science.gov (United States)

    Mello, Guilherme Arantes; Bonfim, José Ruben de Alcântara

    2015-09-01

    A brief review of the career of the public health physician Walter Sidney Pereira Leser, who died in 2004 aged 94. Self-taught, from his 1933 doctoral thesis he became a country reference in the field of statistics and epidemiology, with dozens of studies and supervisions. In the clinical field he is one of the founders of Fleury Laboratory, and participates in the creation of CREMESP. As an academic, Leser was a professor at the Escola de Sociologia e Política de São Paulo, Escola Paulista de Medicina e Faculdade de Farmácia e Odontologia da USP. Also, Leser introduced objective tests in the college entrance examination, and led the creation of CESCEM and Carlos Chagas Foundation. In the Escola Paulista de Medicina he created the first Preventive Medicine Department of the country. As a public official, he was secretary of the State Department of Health of São Paulo between 1967 and 1971 and between 1975 and 1979, responsible for extensive reforms and innovations. Among the most remembered, the creation of sanitary medical career. Throughout this legacy, he lent his name to the "Medal of Honor and Merit Public Health Management" of the State of São Paulo.

  5. Thomas Walter Bannerman Kibble (1932 - 2016)

    CERN Document Server

    2016-01-01

    Tom Kibble, an internationally-renowned theoretical physicist, passed away on Thursday 2 June.   Tom Kibble in the CMS cavern during a visit to CERN in 2014. (Photo: CMS/CERN) Professor Thomas Walter Bannerman Kibble passed away unexpectedly on 2 June at the age of 83. He was senior research investigator at the Blackett Laboratory and Emeritus Professor of Theoretical Physics at Imperial College, London. He made seminal contributions to our current understanding of symmetries and symmetry breaking in the Standard Model of particle physics. He was among those who, in 1964, proposed the mechanism of spontaneous symmetry breaking in gauge theories, together with G. Guralnik and C. Hagen in the autumn of that year, following the papers by R. Brout and F. Englert and by P. Higgs. When this new understanding was incorporated into a model proposed by S. Glashow in 1961, it led to the first formulations of the Standard Model by S. Weinberg and A. Salam. Kibble deepened our under...

  6. Alfred Walter Campbell's return to Australia.

    Science.gov (United States)

    Macmillan, Malcolm

    2018-01-01

    Alfred Walter Campbell (1868-1937) established the basic cytoarchitectonic structure of the human brain while he was working as a pathologist at the Rainhill Lunatic Asylum near Liverpool in the United Kingdom. He returned to Australia in 1905 and continued doing research while establishing a neurological practice. His research over the next 17 years focused on four topics: (a) localisation in the cerebellum, (b) the neuroses and psychoses in war, (c) localisation in the cerebral cortex of the gorilla, and (d) the causes and pathology of the mysterious Australian "X" Disease (later known as Murray Valley encephalitis). In this article, I elaborate on his research in these areas, which provided evidence (a) against Louis Bolk's thesis that variation in the size of the cerebellar cortex reflected variation in the amount of cortex controlling various groups of muscle, (b) against the view that the neuroses and psychoses in war were different from those in civilian life, (c) for a parcelation of the cortex of the gorilla brain that supported his earlier findings in the higher apes, and (d) on the cause and pathophysiology of Australian "X" disease. Much of this research was overlooked, but it remains of considerable value and historical significance.

  7. Study of Schottky diodes made on Mn doped p-type InP

    Czech Academy of Sciences Publication Activity Database

    Žďánský, Karel; Kozak, Halina; Sopko, B.; Pekárek, Ladislav

    2008-01-01

    Roč. 19, č. 1 (2008), S333-S337 ISSN 0957-4522 R&D Projects: GA AV ČR KAN400670651 Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10100520 Keywords : Schottky effect * semiconductors * deep levels Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.054, year: 2008

  8. Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers

    Czech Academy of Sciences Publication Activity Database

    Grym, Jan; Yatskiv, Roman

    2013-01-01

    Roč. 28, č. 4 (2013) ISSN 0268-1242 R&D Projects: GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Colloidal graphite * Epitaxial growth * Schottky barrier diodes Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.206, year: 2013

  9. The Schottky energy barrier dependence of charge injection in organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, I.H.; Davids, P.S.; Smith, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas75083 (United States)

    1998-04-01

    We present device model calculations of the current{endash}voltage (I{endash}V) characteristics of organic diodes and compare them with measurements of structures fabricated using MEH-PPV. The structures are designed so that all of the current is injected from one contact. The I{endash}V characteristics are considered as a function of the Schottky energy barrier to charge injection from the contact. Experimentally, the Schottky barrier is varied from essentially zero to more than 1 eV by using different metal contacts. A consistent description of the device I{endash}V characteristics is obtained as the Schottky barrier is varied from small values, less than about 0.4 eV, where the current flow is space-charge limited to larger values where it is contact limited. {copyright} {ital 1998 American Institute of Physics.}

  10. Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions

    Science.gov (United States)

    Tomer, D.; Rajput, S.; Li, L.

    2017-04-01

    Transport properties of graphene semiconductor Schottky junctions strongly depend on interfacial inhomogeneities due to the inherent formation of ripples and ridges. Here, chemical vapor deposited graphene is transferred onto multilayer MoS2 to fabricate Schottky junctions. These junctions exhibit rectifying current-voltage behavior with the zero bias Schottky barrier height increases and ideality factor decreases with increasing temperature between 210 and 300 K. Such behavior is attributed to the inhomogeneous interface that arises from graphene ripples and ridges, as revealed by atomic force and scanning tunneling microscopy imaging. Assuming a Gaussian distribution of the barrier height, a mean value of 0.96  ±  0.14 eV is obtained. These findings indicate a direct correlation between temperature dependent Schottky barrier height and spatial inhomogeneity in graphene/2D semiconductor Schottky junctions.

  11. Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions

    International Nuclear Information System (INIS)

    Tomer, D; Rajput, S; Li, L

    2017-01-01

    Transport properties of graphene semiconductor Schottky junctions strongly depend on interfacial inhomogeneities due to the inherent formation of ripples and ridges. Here, chemical vapor deposited graphene is transferred onto multilayer MoS 2 to fabricate Schottky junctions. These junctions exhibit rectifying current–voltage behavior with the zero bias Schottky barrier height increases and ideality factor decreases with increasing temperature between 210 and 300 K. Such behavior is attributed to the inhomogeneous interface that arises from graphene ripples and ridges, as revealed by atomic force and scanning tunneling microscopy imaging. Assuming a Gaussian distribution of the barrier height, a mean value of 0.96  ±  0.14 eV is obtained. These findings indicate a direct correlation between temperature dependent Schottky barrier height and spatial inhomogeneity in graphene/2D semiconductor Schottky junctions. (paper)

  12. Schottky barrier MOSFET systems and fabrication thereof

    Science.gov (United States)

    Welch, J.D.

    1997-09-02

    (MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.

  13. Walter User’s Manual (Version 1.0).

    Science.gov (United States)

    1987-09-01

    queries and/or commands. 1.2 - How Walter Uses the Screen As shown in Figure 1-1, Walter divides the screen of your terminal into five separate areas...our attention to queries and how to submit them to the database. 1.3.1 - Submitting Queries A query is an expression consisting of words, parentheses...dates, but also with ranges of dates, such as "oct 15 : nov 15". Waiter recognizes three kinds of dates: * Specific dates of the form [date <month> <day

  14. Carbon nanotube Schottky diode: an atomic perspective

    International Nuclear Information System (INIS)

    Bai, P; Li, E; Kurniawan, O; Koh, W S; Lam, K T

    2008-01-01

    The electron transport properties of semiconducting carbon nanotube (SCNT) Schottky diodes are investigated with atomic models using density functional theory and the non-equilibrium Green's function method. We model the SCNT Schottky diode as a SCNT embedded in the metal electrode, which resembles the experimental set-up. Our study reveals that the rectification behaviour of the diode is mainly due to the asymmetric electron transmission function distribution in the conduction and valence bands and can be improved by changing metal-SCNT contact geometries. The threshold voltage of the diode depends on the electron Schottky barrier height which can be tuned by altering the diameter of the SCNT. Contrary to the traditional perception, the metal-SCNT contact region exhibits better conductivity than the other parts of the diode

  15. Flexible IGZO Schottky diodes on paper

    Science.gov (United States)

    Kaczmarski, Jakub; Borysiewicz, Michał A.; Piskorski, Krzysztof; Wzorek, Marek; Kozubal, Maciej; Kamińska, Eliana

    2018-01-01

    With the development of novel device applications, e.g. in the field of robust and recyclable paper electronics, came an increased demand for the understanding and control of IGZO Schottky contact properties. In this work, a fabrication and characterization of flexible Ru-Si-O/IGZO Schottky barriers on paper is presented. It is found that an oxygen-rich atomic composition and microstructure of Ru-Si-O containing randomly oriented Ru inclusions with diameter of 3-5 nm embedded in an amorphous SiO2 matrix are effective in preventing interfacial reactions in the contact region, allowing to avoid pre-treatment of the semiconductor surface and fabricate reliable diodes at room temperature characterized by Schottky barrier height and ideality factor equal 0.79 eV and 2.13, respectively.

  16. Intoxication of sheep exposed to ozark milkweed (Asclepias viridis Walter).

    Science.gov (United States)

    Smith, R A; Scharko, P; Bolin, D; Hong, C B

    2000-12-01

    Some 20 sheep died 1 at a time on a farm in Fleming County, KY, in late July of 1999 after consumption of Asclepias viridis Walter. Major histological lesions were mild multifocal nonsuppurative myocarditis. Gross pathology revealed wet and heavy lungs. Many affected animals had a hunched appearance, and marked posterior paresis was also observed.

  17. Walter Dill Scott and the Student Personnel Movement

    Science.gov (United States)

    Biddix, J. Patrick; Schwartz, Robert A.

    2012-01-01

    Walter Dill Scott (1869-1955), tenth president of Northwestern University and pioneer of industrial psychology, is an essential architect of student personnel work. This study of his accomplishments, drawing on records from the Northwestern University archives, tells a story about the people he influenced and his involvement in codifying what was…

  18. Double-diffusive convection of compressible rotating Walters' (B ...

    African Journals Online (AJOL)

    user

    A great number of applications of such a flow in geophysics are found in a ... We have considered an infinite, horizontal, compressible electrically conducting Walters' (Model B′) fluid layer of .... Linearized stability theory and normal mode analysis .... boundaries the boundary conditions are (see Chandrasekhar, 1981). 2.

  19. Walter Kaufmann and the Advocacy of German Thought in America.

    Science.gov (United States)

    Soll, Ivan

    1997-01-01

    Examines the career and contributions of Walter Kaufmann. A refugee from Hitler's Germany, Kaufmann set himself the unlikely task of trying to revive interest in Hegel and Nietzsche in the United States. Kaufman's work as a translator, interpreter, and teacher of German philosophy had a long-term impact on U.S. intellectuals. (MJP)

  20. Storytelling for Ordinary, Practical Purposes (Walter Benjamin's "The Storyteller")

    Science.gov (United States)

    Pereira, Íris Susana Pires; Doecke, Brenton

    2016-01-01

    This essay explores the role that storytelling can play in teachers' learning. Walter Benjamin's "The Storyteller" provides a theoretical framework that enables us to highlight the complexity of the professional learning of teachers when they share stories about their everyday lives. We develop our argument by presenting two instances of…

  1. Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

    International Nuclear Information System (INIS)

    Lin, Yow-Jon; Lin, Jian-Huang

    2014-01-01

    Highlights: • The current–voltage characteristics of graphene/n-type Si devices were measured. • The ideality factor increases with the decrease measurement temperatures. • Such behavior is attributed to Schottky barrier inhomogeneities. • Both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing. • Stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers. - Abstract: The current–voltage characteristics of graphene/n-type Si (n-Si) Schottky diodes with and without annealing were measured in the temperature range of −120 to 30 °C and analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and the ideality factor increases with the decrease measurement temperatures. Such behavior is attributed to Schottky barrier inhomogeneities. It is shown that both the barrier height and the ideality factor can be tuned by changing the annealing temperature. Through the analysis, it can be suspected that a SiO x layer at the graphene/n-Si interfaces influences the electronic conduction through the device and stoichiometry of SiO x is affected by annealing treatment. In addition, both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing treatment, implying that stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers of graphene/n-Si Schottky diodes

  2. Schottky contacts to In2O3

    Directory of Open Access Journals (Sweden)

    H. von Wenckstern

    2014-04-01

    Full Text Available n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.

  3. Polycrystalline Diamond Schottky Diodes and Their Applications.

    Science.gov (United States)

    Zhao, Ganming

    In this work, four-hot-filament CVD techniques for in situ boron doped diamond synthesis on silicon substrates were extensively studied. A novel tungsten filament shape and arrangement used to obtain large-area, uniform, boron doped polycrystalline diamond thin films. Both the experimental results and radiative heat transfer analysis showed that this technique improved the uniformity of the substrate temperature. XRD, Raman and SEM studies indicate that large area, uniform, high quality polycrystalline diamond films were obtained. Schottky diodes were fabricated by either sputter deposition of silver or thermal evaporation of aluminum or gold, on boron doped diamond thin films. High forward current density and a high forward-to-reverse current ratio were exhibited by silver on diamond Schottky diodes. Schottky barrier heights and the majority carrier concentrations of both aluminum and gold contacted diodes were determined from the C-V measurements. Furthermore, a novel theoretical C-V-f analysis of deep level boron doped diamond Schottky diodes was performed. The analytical results agree well with the experimental results. Compressive stress was found to have a large effect on the forward biased I-V characteristics of the diamond Schottky diodes, whereas the effect on the reverse biased characteristics was relatively small. The stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. This result shows that CVD diamond device has potential for mechanical transducer applications. The quantitative photoresponse characteristics of the diodes were studied in the spectral range of 300 -1050 nm. Semi-transparent gold contacts were used for better photoresponse. Quantum efficiency as high as 50% was obtained at 500 nm, when a reverse bias of over 1 volt was applied. The Schottky barrier heights between either gold or

  4. Walter Benjamin i l'aura de l'autobiografia

    OpenAIRE

    Martí Monterde, Antoni, 1968-

    2006-01-01

    És la biblioteca una forma d'autobiografia? Només caldria un sol escrit que ho demostrés de manera plena per a afirmar que sí, i aquest text el va escriure Walter Benjamin, qui el 17 de juliol de 1931 va publicar, a Die literarische Welt, 'un discurs sobre el col·leccionisme' sota el títol 'Tot desembolicant la meua biblioteca'.

  5. Graphite based Schottky diodes formed semiconducting substrates

    Science.gov (United States)

    Schumann, Todd; Tongay, Sefaattin; Hebard, Arthur

    2010-03-01

    We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). The fabrication can be as easy as allowing a dab of graphite paint to air dry on any one of the investigated semiconductors. Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

  6. Pentacene-based photodiode with Schottky junction

    International Nuclear Information System (INIS)

    Lee, Jiyoul; Hwang, D.K.; Park, C.H.; Kim, S.S.; Im, Seongil

    2004-01-01

    We have fabricated a metal/organic semiconductor Schottky photodiode based on Al/pentacene junction. Since the energy band gap of thin solid pentacene was determined to be 1.82 eV, as characterized by direct absorption spectroscopy, we measured spectral photoresponses on our Schottky photodiode in the monochromatic light illumination range of 325-650 nm applying a reverse bias of -2 V. The main features of photo-response spectra were found to shift from those of direct absorption spectra toward higher photon energies. It is because the direct absorption spectra mainly show exciton level peaks rather than the true highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gaps while the photo-response spectra clearly represents the true HOMO-LUMO gap. Our photo-response spectra reveal 1.97 eV as the HOMO-LUMO gap

  7. Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan

    2013-01-01

    Roč. 28, č. 5 (2013) ISSN 0268-1242 R&D Projects: GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Gallium nitride * Schottky barrier diodes * Graphite Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.206, year: 2013

  8. Gallium Nitride Schottky betavoltaic nuclear batteries

    International Nuclear Information System (INIS)

    Lu Min; Zhang Guoguang; Fu Kai; Yu Guohao; Su Dan; Hu Jifeng

    2011-01-01

    Research highlights: → Gallium Nitride nuclear batteries with Ni-63 are demonstrated for the first time. → Open circuit voltage of 0.1 V and conversion efficiency of 0.32% have been obtained. → The limited performance is due to thin effective energy deposition layer. → The output power is expected to greatly increase with growing thick GaN films. -- Abstract: Gallium Nitride (GaN) Schottky betavoltaic nuclear batteries (GNBB) are demonstrated in our work for the first time. GaN films are grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD), and then GaN Schottky diodes are fabricated by normal micro-fabrication process. Nickel with mass number of 63 ( 63 Ni), which emits β particles, is loaded on the GaN Schottky diodes to achieve GNBB. X-ray diffraction (XRD) and photoluminescence (PL) are carried out to investigate the crystal quality for the GaN films as grown. Current-voltage (I-V) characteristics shows that the GaN Schottky diodes are not jet broken down at -200 V due to consummate fabrication processes, and the open circuit voltage of the GNBB is 0.1 V and the short circuit current density is 1.2 nA cm -2 . The limited performance of the GNBB is due to thin effective energy deposition layer, which is only 206 nm to absorb very small partial energy of the β particles because of the relatively high dislocation density and carrier concentration. However, the conversion efficiency of 0.32% and charge collection efficiency (CCE) of 29% for the GNBB have been obtained. Therefore, the output power of the GNBB are expected to greatly increase with growing high quality thick GaN films.

  9. Schottky Barriers in Bilayer Phosphorene Transistors.

    Science.gov (United States)

    Pan, Yuanyuan; Dan, Yang; Wang, Yangyang; Ye, Meng; Zhang, Han; Quhe, Ruge; Zhang, Xiuying; Li, Jingzhen; Guo, Wanlin; Yang, Li; Lu, Jing

    2017-04-12

    It is unreliable to evaluate the Schottky barrier height (SBH) in monolayer (ML) 2D material field effect transistors (FETs) with strongly interacted electrode from the work function approximation (WFA) because of existence of the Fermi-level pinning. Here, we report the first systematical study of bilayer (BL) phosphorene FETs in contact with a series of metals with a wide work function range (Al, Ag, Cu, Au, Cr, Ti, Ni, and Pd) by using both ab initio electronic band calculations and quantum transport simulation (QTS). Different from only one type of Schottky barrier (SB) identified in the ML phosphorene FETs, two types of SBs are identified in BL phosphorene FETs: the vertical SB between the metallized and the intact phosphorene layer, whose height is determined from the energy band analysis (EBA); the lateral SB between the metallized and the channel BL phosphorene, whose height is determined from the QTS. The vertical SBHs show a better consistency with the lateral SBHs of the ML phosphorene FETs from the QTS compared than that of the popular WFA. Therefore, we develop a better and more general method than the WFA to estimate the lateral SBHs of ML semiconductor transistors with strongly interacted electrodes based on the EBA for its BL counterpart. In terms of the QTS, n-type lateral Schottky contacts are formed between BL phosphorene and Cr, Al, and Cu electrodes with electron SBH of 0.27, 0.31, and 0.32 eV, respectively, while p-type lateral Schottky contacts are formed between BL phosphorene and Pd, Ti, Ni, Ag, and Au electrodes with hole SBH of 0.11, 0.18, 0.19, 0.20, and 0.21 eV, respectively. The theoretical polarity and SBHs are in good agreement with available experiments. Our study provides an insight into the BL phosphorene-metal interfaces that are crucial for designing the BL phosphorene device.

  10. Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

    OpenAIRE

    Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

    2015-01-01

    Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28?eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increa...

  11. Paterson Receives 2004 Walter H. Bucher Medal

    Science.gov (United States)

    Jackson, Ian

    2005-01-01

    Mervyn S. Paterson received the Bucher Medal at the 2004 Fall Meeting Honors Ceremony on 15 December, in San Francisco, California. The medal is given for original contributions to the basic knowledge of the crust and lithosphere. Citation. It is the nature of modern research in the Earth sciences that observations of natural phenomena are often made and interpreted through the prism provided by the enabling sciences and technologies. Thus it has been with Mervyn Paterson's career. His undergraduate training in engineering in Adelaide formed the basis for his Ph.D. study of X-ray line-broadening in cold-worked metals under Orowan at Cambridge. This interest in the deformation of metals was fostered during his employment at the Aeronautical Research Laboratories in Melbourne and by postdoctoral experience at the Institute of Metals at the University of Chicago. Mervyn's general background in engineering and his particular interest in mechanical behavior have underpinned a distinguished career at the Australian National University in the experimental deformation of rocks, providing fundamental new insight into the mechanical behavior of the Earth's crust.

  12. Subjectivity and the “Shocking”: Walter Pater, Oscar Wilde and Ethical Limits of Pleasure

    Directory of Open Access Journals (Sweden)

    Ashmita Mukherjee

    2016-02-01

    Full Text Available The article analyzes the “shocking” and so-called “immoral” as a response to the institution-imposed methods of surveillance. This leads to initiation of discourses over behavior or actions which may not be unethical but which may be questionable in terms of social propriety. Moreover, the “shocking” may be seen as persistent attempts at formulation of subjectivity -the “performative self.” These ideas are analyzed with reference to Foucault's perspective on the issues and briefly in context of the late Victorian Aesthete culture spearheaded by Walter Pater and later, Oscar Wilde, the quintessential “dandy.” Their texts Marius the Epicurean and The Picture of Dorian Gray are read with the question of ethics and hedonism in mind, also relating the same to their fascination with classical Epicureanism.     Keywords: Aesthetics; Ethics; Pater; Wilde; Shocking; Surveillance; Foucault; Epicureanism.

  13. The implementation of research recommendations at the Walter Sisulu National Botanical Garden

    Directory of Open Access Journals (Sweden)

    Martie Mearns

    2009-09-01

    Full Text Available A comparative study Biodiversity is not a static phenomenon and many variables have an effect on accelerated biodiversity loss. While most of the variables affecting biodiversity loss are caused by humankind, many species are affected by more than one variable simultaneously. Six fundamental causes for biodiversity loss have been identifi ed, namely unsustainable population growth and associated increased pressure on natural resources; a reduced spectrum of agricultural, forestry and fishery products; failure of economic systems to attach appropriate economic value to the environment and resources; inequality in ownership, flow and management of the benefits and utilisation of resources; insufficient knowledge in the application and use of resources; and legislation and institutional systems that promote unsustainable abuse of the environment (Middleton 2003:250. The worldwide loss of biodiversity makes the management of protected areas more important than ever. Protected areas are under increasing pressure to become economically viable and independent of state grants. Tourism creates the mechanism and opportunities for protected areas to increase their economic viability while advancing the appreciation of nature. The management of these protected areas therefore includes the management of visitors. South Africa is the third most bio diverse country in the world. Amongst a variety of nature conservation endeavours nine national botanical gardens are managed by the South African National Biodiversity Institute (SANBI. One of the nine national gardens is the Walter Sisulu National Botanical Garden situated in Roodekrans towards the west of Johannesburg. A study was launched to determine preferences of visitors to the Walter Sisulu National Botanical Garden by making use of semi-structured interviews. The purpose of the study was threefold. Firstly the study was launched to determine whether visitors to the garden had an increased awareness

  14. Enhanced Schottky signals from electron-cooled, coasting beams in a heavy-ion storage ring

    Energy Technology Data Exchange (ETDEWEB)

    Krantz, C., E-mail: claude.krantz@mpi-hd.mpg.d [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany); Blaum, K.; Grieser, M. [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany); Litvinov, Yu.A. [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, Planckstrasse 1, D-64291 Darmstadt (Germany); Repnow, R.; Wolf, A. [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, D-69117 Heidelberg (Germany)

    2011-02-11

    Measurements at the Test Storage Ring of the Max-Planck-Institut fuer Kernphysik in Heidelberg (Germany) have shown that the signal amplitude induced in a Schottky-noise pickup electrode by a coasting electron-cooled ion beam can be greatly enhanced by exposure of the latter to a perturbing radiofrequency signal which is detuned from the true beam revolution frequency. The centre frequencies obtained from harmonic analysis of the observed pickup signal closely follow those imposed on the ions by the electron cooling force. The phenomenon can be exploited to measure the true revolution frequency of ion beams of very low intensity, whose pure Schottky noise is too weak to be measurable under normal circumstances.

  15. Schottky effect model of electrical activity of metallic precipitates in silicon

    International Nuclear Information System (INIS)

    Plekhanov, P. S.; Tan, T. Y.

    2000-01-01

    A quantitative model of the electrical activity of metallic precipitates in Si is formulated with an emphasis on the Schottky junction effects of the precipitate-Si system. Carrier diffusion and carrier drift in the Si space charge region are accounted for. Carrier recombination is attributed to the thermionic emission mechanism of charge transport across the Schottky junction rather than the surface recombination. It is shown that the precipitates can have a very large minority carrier capture cross-section. Under weak carrier generation conditions, the supply of minority carriers is found to be the limiting factor of the recombination process. The plausibility of the model is demonstrated by a comparison of calculated and available experimental results. (c) 2000 American Institute of Physics

  16. Walter Lippmann’s Ethical Challenge to the Individual

    Directory of Open Access Journals (Sweden)

    Steve Urbanski

    2012-01-01

    Full Text Available This essay analyzes in hermeneutic fashion random concepts of the individual from three of philosopher Walter Lippmann’s major works, Liberty and the News, Public Opinion, and The Phantom Public. The article addresses the following: By considering Lippmann’s multileveled representation of the individual, 21st-century media professionals can become empowered to avoid emotivism and strive toward a more narrative-based form of ethics. The article compares and contrasts Lippmann’s representation of the individual with John Dewey’s Great Community and Daniel Boorstin’s notion of the pseudo-event.

  17. Walter Gropius no Brasil: revisitando críticas

    OpenAIRE

    Rodrigo Marcondes Rocha

    2013-01-01

    O tema desta dissertação de mestrado nasce do interesse pela obra e pela figura do arquiteto alemão Walter Gropius (1883-1969) e enfoca sua passagem pelo Brasil em janeiro de 1954, quando participou como destaque da Exposição Internacional de Arquitetura (evento integrante da II Bienal Internacional de Artes de São Paulo, que por sua vez coincidia com as comemorações do IV Centenário da fundação da cidade), recebeu o Prêmio São Paulo de Arquitetura, em sua primeira e única e...

  18. The Daughters of Fire: Walter Hugo Khouri's female gothic

    Directory of Open Access Journals (Sweden)

    Daniel Serravalle de Sá

    2012-11-01

    This article seeks to investigate the connections between WalterHugo Khouri’s film As Filhas do Fogo (1978 and the Gothicstressing matters of gender, race and nationality. More than asimple re-classification, this Gothic framework of study seeks todemonstrate that the representation of necromancy, mysteriousdeaths and female imprisonment in a tropical manor suggest issueslinked to Brazilian cultural identity and concerns. By associatingKhouri’s film to a form that is representative of popularentertainment this article seeks to establish a case in point ofhow the notion of Gothic can be a useful concept in the investigationof Brazilian film history.

  19. Abysmal Language. The Mystic of the Language in Walter Benjamin

    OpenAIRE

    Emiliano Mendoza Solís

    2014-01-01

    Walter Benjamin expone en su ensayo de juventud denominado “Sobre el lenguaje en cuanto tal y sobre el lenguaje del hombre” (1916), los aspectos más importantes relativos a la teoría del lenguaje. La idea de lenguaje está fundamentadamediante el examen de los contenidos espirituales del hombre y surelación con el ser lingüístico. Esta distinción condiciona a la teoría a permanecer sobre el abismo que anida en el interior de la entidad espiritual del lenguaje. El elemento abismal da lugar a un...

  20. PROTAGONISM OF AMERICAN INDIANS IN WALTER LANTZ'S CARTOONS

    Directory of Open Access Journals (Sweden)

    Rafael Duarte Oliveira Venancio

    2011-06-01

    Full Text Available Condemned to a dubious media representation in early cinema through the novels of the late nineteenth century, the North American Indians never had a high profile in films of this period. However, an animator, Walter Lantz, has a high degree of characterization of Native Americans in his work. The aim of this paper is to study the role of Native Americans in these cartoons and analyze the social implications of these choices, using the concepts of apparatus and formula. Furthermore, the analysis will include a portrayal of the American media scene before and after Lantz, seeking disruptions and legacies.

  1. Gate Modulation of Graphene-ZnO Nanowire Schottky Diode.

    Science.gov (United States)

    Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

    2015-05-06

    Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping Vg towards the negative value, while decreases slowly towards the positive Vg. Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.

  2. Walter Charleton (1620 - 1707 e sua Teoria Atômica The atomic theory of walter charleton (1620 - 1707

    Directory of Open Access Journals (Sweden)

    Paulo Alves Porto

    1997-06-01

    Full Text Available Several authors in the 17th century used the atomic hypothesis to explain observable phenomena. This paper analyzes some ideas about chemical transformation proposed by the English physician Walter Charleton. In Physiologia Epicuro-Gassendo-Charltoniana (London, 1654, Charleton examined philosophical aspects of the atomic theory, and suggested that the best explanation for all natural phenomena would be only in terms of atoms and their motions. Sometimes, however, he had to attribute to the atoms some kind of "internal virtue", to explain more complex properties of the matter. His idea of "element", and the little use of experimentation and quantification, also limited the range of Charleton's theory.

  3. Walter Benjamin, historia cultural y fotografía

    Directory of Open Access Journals (Sweden)

    Maria Isabel Zapata Villamil

    2004-06-01

    Full Text Available In this article we will see that Walter Benjamin's construction of a concept of history is not based only on thinkers like Marx, Freud or Nietzsche. For Benjamin, certain works of art were sources of great inspiration. Besides pointing out this wide range of sources, my interest is in highlighting Benjamin’sinterest in images as sources. Benjamin considers iconography, mass production of art and technical aspects of photographic reproduction.//A lo largo de este artículo veremos cómo Walter Benjamin no se basará únicamente en pensadores como Marx, Freud y Nietzsche para construir su concepción de la historia. Para él serán también fuentes de inspiración fundamental algunas obras artísticas. Además de destacar esta amplia gama de fuentes mi interés es resaltar su acercamiento a estas últimas, principalmente con relación a las imágenes. Para referirse a ellas Benjamin considerará: La interpretación de lo iconográfico, la consideración del arte de masas y el estudio de la técnica reproductiva.

  4. "Un paysage hanté, intense comme l'opium". Ville et notion de paysage selon Siegfried Kracauer et Walter Benjamin

    DEFF Research Database (Denmark)

    Reeh, Henrik

    2001-01-01

    bykultur, filosofi, Walter Benjamin, Siegfried Kracauer, Berlin, Paris, landskab, begrebet bylandskab......bykultur, filosofi, Walter Benjamin, Siegfried Kracauer, Berlin, Paris, landskab, begrebet bylandskab...

  5. K rozmnožení cti a chvály Boží a ku prospěchu vlasti. Mikuláš Walter z Waltersperku († 1578) a jeho studijní nadace

    Czech Academy of Sciences Publication Activity Database

    Holá, M.; Holý, Martin

    2013-01-01

    Roč. 28, č. 1 (2013), s. 5-27 ISSN 0231-7494 R&D Projects: GA ČR GPP405/12/P422 Institutional support: RVO:67985963 Keywords : educational foundations * Mikuláš Walter of Waltersperk * Prague University * Early Modern Period Subject RIV: AB - History

  6. Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

    Science.gov (United States)

    Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Shim, Kyu-Hwan; Cho, Hyunjin; Kim, Myung-Jong; Lee, Sung-Nam; Jeong, Jae-chan; Hong, Hyobong; Choi, Chel-Jong

    2016-03-01

    We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (VB), ideality factor (n), and series resistance (Rs), were extracted using the forward I-V and Cheung's methods. The VB and n extracted from the forward ln(I)-V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the VB and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of VB calculated from the forward I-V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz-1 kHz showed that the graphene/n-type Ge SBD had 1/f γ frequency dependence, with γ ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current.

  7. Schottky-contact plasmonic rectenna for biosensing

    Science.gov (United States)

    Alavirad, Mohammad; Siadat Mousavi, Saba; Roy, Langis; Berini, Pierre

    2013-10-01

    We propose a plasmonic gold nanodipole array on silicon, forming a Schottky contact thereon, and covered by water. The behavior of this array under normal excitation has been extensively investigated. Trends have been found and confirmed by identification of the mode propagating in nanodipoles and its properties. This device can be used to detect infrared radiation below the bandgap energy of the substrate via internal photoelectric effect (IPE). Also we estimate its responsivity and detection limit. Finally, we assess the potential of the structure for bulk and surface (bio) chemical sensing. Based on modal results an analytical model has been proposed to estimate the sensitivity of the device. Results show a good agreement between numerical and analytical interpretations.

  8. Abysmal Language. The Mystic of the Language in Walter Benjamin

    Directory of Open Access Journals (Sweden)

    Emiliano Mendoza Solís

    2014-01-01

    Full Text Available Walter Benjamin expone en su ensayo de juventud denominado “Sobre el lenguaje en cuanto tal y sobre el lenguaje del hombre” (1916, los aspectos más importantes relativos a la teoría del lenguaje. La idea de lenguaje está fundamentadamediante el examen de los contenidos espirituales del hombre y surelación con el ser lingüístico. Esta distinción condiciona a la teoría a permanecer sobre el abismo que anida en el interior de la entidad espiritual del lenguaje. El elemento abismal da lugar a una revelación o principio (arché vinculadoa la mística del lenguaje.

  9. Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Campola, Michael J.; Label, Kenneth A.

    2017-01-01

    In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

  10. Supersensitive, Fast-Response Nanowire Sensors by Using Schottky Contacts

    KAUST Repository

    Hu, Youfan

    2010-05-31

    A Schottky barrier can be formed at the interface between a metal electrode and a semiconductor. The current passing through the metal-semiconductor contact is mainly controlled by the barrier height and barrier width. In conventional nanodevices, Schottky contacts are usually avoided in order to enhance the contribution made by the nanowires or nanotubes to the detected signal. We present a key idea of using the Schottky contact to achieve supersensitive and fast response nanowire-based nanosensors. We have illustrated this idea on several platforms: UV sensors, biosensors, and gas sensors. The gigantic enhancement in sensitivity of up to 5 orders of magnitude shows that an effective usage of the Schottky contact can be very beneficial to the sensitivity of nanosensors. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Durability of PEDOT: PSS-pentacene Schottky diode

    International Nuclear Information System (INIS)

    Kang, K S; Lim, H K; Cho, K Y; Han, K J; Kim, Jaehwan

    2008-01-01

    The durability and failure cause of a polymer Schottky diode made with PEDOT : PSS-pentacene were investigated. A polymer Schottky diode was fabricated by dissolving pentacene in N-methylpyrrolidone (NMP) and mixing with PEDOT : PSS. Pentacene solution having a maximum concentration of approximately 9.7 mmoles was prepared by simply stirring the solution at room temperature for 36 h. As the pentacene concentration increased, the absorption of the broad UV regime increased dramatically. However, absorption peaks of pentacene at 301 and 260 nm were not observed for the PEDOT : PSS-pentacene. A three-layered polymer Schottky diode was fabricated and its current-voltage (I-V) characteristic was evaluated. The current was reduced by 7% in the first 50 min and then stabilized during biased electrical field sweeps. After 500 and 800 min, catastrophic failure occurred. FESEM images revealed that the electrode damage caused catastrophic failure of the Schottky diode. (fast track communication)

  12. Piezotronically modified double Schottky barriers in ZnO varistors.

    Science.gov (United States)

    Raidl, Nadine; Supancic, Peter; Danzer, Robert; Hofstätter, Michael

    2015-03-25

    Double Schottky barriers in ZnO are modified piezotronically by the application of mechanical stresses. New effects such as the enhancement of the potential barrier height and the increase or decrease of the natural barrier asymmetry are presented. Also, an extended model for the piezotronic modification of double Schottky barriers is given. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Photovoltaic characterization of graphene/silicon Schottky junctions from local and macroscopic perspectives

    Czech Academy of Sciences Publication Activity Database

    Hájková, Zdeňka; Ledinský, Martin; Vetushka, Aliaksi; Stuchlík, Jiří; Müller, Martin; Fejfar, Antonín; Bouša, Milan; Kalbáč, Martin; Frank, Otakar

    2017-01-01

    Roč. 676, May (2017), s. 82-88 ISSN 0009-2614 R&D Projects: GA ČR GA14-15357S Institutional support: RVO:68378271 ; RVO:61388955 Keywords : CVD graphene * microcrystalline silicon * solar cells * Schottky junctions * current-voltage curves * C-AFM Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) (UFCH-W) Impact factor: 1.815, year: 2016

  14. Barrier height of Pt–In[sub x]Ga[sub 1−x]N (0≤x≤0.5) nanowire Schottky diodes

    KAUST Repository

    Guo, Wei; Banerjee, Animesh; Zhang, Meng; Bhattacharya, Pallab

    2011-01-01

    The barrier height of Schottky diodes made on Inx Ga 1-x N nanowires have been determined from capacitance-voltage measurements. The nanowires were grown undoped on n-type (001) silicon substrates by plasma-assisted molecular beam epitaxy. The length, diameter and density of the nanowires are ∼1 μm, 20 nm, and 1× 1011 cm-2. The Schottky contact was made on the top surface of the nanowires with Pt after planarizing with parylene. The measured barrier height B varies from 1.4 eV (GaN) to 0.44 eV (In0.5 Ga0.5 N) and agrees well with the ideal barrier heights in the Schottky limit. © 2011 American Institute of Physics.

  15. Walter Cronkite Speaks to Teachers...(and That's the Way It Is).

    Science.gov (United States)

    Cronkite, Walter; Martorelli, Debra

    1980-01-01

    In this interview with "Instructor" assistant editor Debra Martorelli, respected television journalist Walter Cronkite discusses the amount of time children spend watching television, public concerns with the schools, and the news media's coverage of education. (SJL)

  16. Heat transfer in MHD flow of dusty viscoelastic (Walters' liquid model ...

    Indian Academy of Sciences (India)

    fluid in porous medium on a parallel plate channel inclined at an angle θ. ... temperature field, Nusselt number, skin friction and flow flux are obtained within the channel. The ... Walters [2] proposed a theoretical model for elastoviscous fluids.

  17. Täiustatud tõde ehk Walter Andersoni rahvajuttude enesekontrolli seadus / Elo-Hanna Seljamaa

    Index Scriptorium Estoniae

    Seljamaa, Elo-Hanna, 1980-

    2007-01-01

    Geograafilis-ajaloolise meetodi lähtealuste ja eesmärkide toel analüüsitakse Walter Andersoni, Tartu Ülikooli esimese folkloristikaprofessori käsitlusi folkloorist ja folkloori uurimisest ning tema tegevust meetodi edasiarendajana

  18. AFSC/ABL: Little Port Walter Marine Research Station Supply Run Oceanographic Observations

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — In November, 2006, Oceanographic observations were initiated during the resupply cruises to the Little Port Walter Research Station on lower Baranof Island,...

  19. Microsoft PowerPoint - Walter Coke Comm May 19 Karen correction presentation [Compatibility Mode

    Science.gov (United States)

    Contains slides from a presentation to Collegeville, Harriman Park, and Fairmont neighborhoods in North Birmingham, Alabama updating the community on the environmental sampling and next steps on the Walter Coke cleanup site.

  20. STS-55 MS1/PLC Ross monitors Payload Specialist Walter's Anthrorack activity

    Science.gov (United States)

    1993-01-01

    STS-55 German Payload Specialist 1 Ulrich Walter breathes into Rack 9 Anthrorack (AR) (Human Physiology Laboratory) device for Pulmonary Perfusion and Ventilation During Rest and Exercise experiment while working inside the Spacelab Deutsche 2 (SL-D2) science module aboard the Earth-orbiting Columbia, Orbiter Vehicle (OV) 102. Seated on the bicycle ergometer, Walter utilizes the respiratory monitoring system, part of a broad battery of experiments designed to investigate human physiology under microgravity conditions. In the background, Mission Specialist 1 (MS1) and Payload Commander (PLC) Jerry L. Ross monitors Walter's activity. Walter represents the German Aerospace Research Establishment (DLR) on the 10-day SL-D2 mission. Visible on the aft end cone are a fire extinguisher and the Crew Telesupport Experiment (CTE) Macintosh portable computer mounted on an adjustable work platform.

  1. Walter Benjamin e Paris: individualidade e trabalho intelectual

    Directory of Open Access Journals (Sweden)

    Renato Ortiz

    2000-05-01

    Full Text Available Este artigo é uma leitura do texto de Walter Benjamin Paris capital do século XIX. A partir do conjunto de anotações que Benjamin faz de diversos livros consultados, principalmente durante sua pesquisa na Bibliothèque Nationale, o autor pretende trabalhar a noção de indivíduo vinculando-a a dois temas. Primeiro, a emergência do flâneur como tradução do espírito de mobilidade que se inaugura com a modernidade. Para isso a discussão sobre a noção de espaço, particularmente no que diz respeito a cidade de Paris, é importante. O flâneur surge assim como um indivíduo desenraizado que se locomove através do espaço urbano remodelado. Segundo, uma aproximação entre o ato da flânerie e o trabalho intelectual. Considerando a flânerie como uma atividade intelectual o autor mostra como os temas do distanciamento e da construção do objeto são relevantes tanto para o flâneur-detetive quanto para a reflexão nas ciências sociais.This paper is an interpretation of Walter Benjamins Paris, Capital of the 19th Century. Based on the notes Benjamin made on several books he read, mainly during his research at the Bibliotèque Nationale, the author discusses the notion of the individual linking it to two themes. First, to the emergence of the flâneur as a translation of the spirit of mobility which starts with modernity. The discussion on the notion of space, especially where it concerns Paris, is essential for this analysis. The flâneur is seen as an uprooted individual who moves around the remodelled urban space. Second, to the proximity between the act of flânerie and that of intellectual work. Taking flânerie to be intellectual activity, the author shows how the themes of the distancing and the construction of the object are relevant, both to the detective-flâneur and to the reflection in social sciences.

  2. Fragments on black swan: money, credit and finance in The Arcades Project of Walter Benjamin

    OpenAIRE

    Estrada, Fernando

    2010-01-01

    The main objective of this paper is to present a reading of The Arcades Project by Walter Benjamin in the context of the financial crisis, in particular, reflect from a few fragments of Benjamin's work appear to lie around a Black Swan. The recovery of the fragments of The Arcades seems appropriate at a time when the financial crisis should be taught as a deeper crisis. Walter Benjamin is placed beyond its time, with a powerful sense of observation worthy of emulation analytical.

  3. Auf den Spuren des verschollenen Polarforschers Baron Eduard Toll und seines Freundes Hermann Walter auf der Kotelny-Insel / Erki Tammiksaar, Roland Walter, Hans-Otto von Walter... [jt.

    Index Scriptorium Estoniae

    Tammiksaar, Erki, 1969-

    2011-01-01

    Baltisakslaste koostööst kuulsa vene polaaruurija Dmitri Šparoga seoses baltisaksa polaaruurija Hermann Walteri säilmete ringimatmisega Kotelnõi saarel. Hermann Walter osales Eduard von Tolli Sannikovi maa otsimise ekspeditsioonis. Hermann Walteri põhjalik iseloomustus

  4. High Voltage GaN Schottky Rectifiers

    Energy Technology Data Exchange (ETDEWEB)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  5. Il desiderio Kitsch: i troppi paradisi di Walter Siti

    Directory of Open Access Journals (Sweden)

    Ornella Tajani

    2013-06-01

    Full Text Available Cosa ne è del desiderio all’interno del Kitsch, sistema in cui la vita è vissuta come uno spot pubblicitario e l’identità come una eterna performance? In una dimensione utopistica in cui l’uomo non cerca altro che una continua soddisfazione come possono trovare spazio le tensioni e le mancanze che muovono il desiderio? Dopo una premessa teorica su cosa è il Kitsch, l’intervento si propone di rispondere al quesito attraverso tre opere di Walter Siti: i romanzi Troppi paradisi e Autopsia dell’ossessione e il reportage narrativo Il canto del diavolo. In queste opere vengono individuati tre paradigmi dell’esperienza Kitsch: il turismo, la televisione e un certo tipo di prostituzione. Indagandone le modalità e analizzando le riflessioni dell’autore in merito si vedrà come si deforma il desiderio quando si trova a dover fare i conti con il perpetuo sforzo del Kitschmensch di camuffarsi, per dirla con Kundera, «dans le miroir du mensonge embellissant et de s’y reconnaître avec une satisfaction émue». La meravigliosa e sostenibilissima leggerezza dell’essere che assurge a cifra interpretativa dell’utopia Kitsch non prevede la presenza del desiderio se non nella sua veste di “realizzabilità”: il desiderio Kitsch, il surrogato del desiderio, è offerto in omaggio col prodotto che lo appaga.

  6. Gerard Manley Hopkins and Walter Pater : the labyrinths of transience

    Directory of Open Access Journals (Sweden)

    Mirko Starčević

    2016-12-01

    Full Text Available Transience forming life's very essence left an indelible mark on the creative explorations of Gerard Manley Hopkins and Walter Pater. The permanently indeterminable presence of mutability made both of them face the umbrous and unknowable aspect of death, thus revealing unto them the task of determining the role of art in life ruled by ceaseless corrosion. Pater accepts the flux of mutability as the primary particle in the revelatory act of the authentic creative experience. The power of that which is frolicsome in art augments the constitution of life's essence submerged in the unsettled condition of fate. Hopkins the priest particularly in his theoretic excursions recognizes in art itself only an approximate value to the timeless grandeur of God's ubiquity. His poetry, however, presents a dissimilar narrative. The poetic image that Hopkins forges corresponds to the mode of exposed individuality of the Romantic spirit, which Pater perceives as the harmony of strangeness and beauty. During Hopkins' student days at Oxford, Pater's relationship to the young poet was not confined to coaching only. Much of their time they spent in conversation, meditating upon the essential principles of artistic expression. Pater influenced Hopkins greatly and contributed impressively to the discipline of his poetic heart. Traces of this companionship do not find the path to Hopkins' religious ruminations; they announce their own existence, although very subtly, upon the individual levels of Hopkins' poetic yearnings.

  7. Schottky junctions on perovskite single crystals: light-modulated dielectric constant and self-biased photodetection

    KAUST Repository

    Shaikh, Parvez Abdul Ajij; Shi, Dong; Duran Retamal, Jose Ramon; Sheikh, Arif D.; Haque, Mohammed; Kang, Chen-Fang; He, Jr-Hau; Bakr, Osman; Wu, Tao

    2016-01-01

    Schottky junctions formed between semiconductors and metal contacts are ubiquitous in modern electronic and optoelectronic devices. Here we report on the physical properties of Schottky-junctions formed on hybrid perovskite CH3NH3PbBr3 single

  8. Gigantic Enhancement in Sensitivity Using Schottky Contacted Nanowire Nanosensor

    KAUST Repository

    Wei, Te-Yu

    2009-12-09

    A new single nanowire based nanosensor is demonstrated for illustrating its ultrahigh sensitivity for gas sensing. The device is composed of a single ZnO nanowire mounted on Pt electrodes with one end in Ohmic contact and the other end in Schottky contact. The Schottky contact functions as a "gate" that controls the current flowing through the entire system. By tuning the Schottky barrier height through the responsive variation of the surface chemisorbed gases and the amplification role played by the nanowire to Schottky barrier effect, an ultrahigh sensitivity of 32 000% was achieved using the Schottky contacted device operated in reverse bias mode at 275 °C for detection of 400 ppm CO, which is 4 orders of magnitude higher than that obtained using an Ohmic contact device under the same conditions. In addition, the response time and reset time have been shortened by a factor of 7. The methodology and principle illustrated in the paper present a new sensing mechanism that can be readily and extensively applied to other gas sensing systems. © 2009 American Chemical Society.

  9. Gigantic Enhancement in Sensitivity Using Schottky Contacted Nanowire Nanosensor

    KAUST Repository

    Wei, Te-Yu; Yeh, Ping-Hung; Lu, Shih-Yuan; Wang, Zhong Lin

    2009-01-01

    A new single nanowire based nanosensor is demonstrated for illustrating its ultrahigh sensitivity for gas sensing. The device is composed of a single ZnO nanowire mounted on Pt electrodes with one end in Ohmic contact and the other end in Schottky contact. The Schottky contact functions as a "gate" that controls the current flowing through the entire system. By tuning the Schottky barrier height through the responsive variation of the surface chemisorbed gases and the amplification role played by the nanowire to Schottky barrier effect, an ultrahigh sensitivity of 32 000% was achieved using the Schottky contacted device operated in reverse bias mode at 275 °C for detection of 400 ppm CO, which is 4 orders of magnitude higher than that obtained using an Ohmic contact device under the same conditions. In addition, the response time and reset time have been shortened by a factor of 7. The methodology and principle illustrated in the paper present a new sensing mechanism that can be readily and extensively applied to other gas sensing systems. © 2009 American Chemical Society.

  10. MD 2408: Study of Schottky Monitors for Q' Measurement at Injection

    CERN Document Server

    Tydecks, Tobias; Levens, Tom; Wendt, Manfred; Wenninger, Jorg; CERN. Geneva. ATS Department

    2018-01-01

    The Schottky monitors installed at the LHC enable the detection of Schottky noise of the two circulating proton / ion beams. From Schottky noise, beam parameters like tune, chromaticity, and relative emittance, can be extracted in a non-destructive and purely parasitic method of measurement. The primary goal of this MD was to study the Schottky monitors capability to reliably and accurately determine the beam chromaticities at injection energy. Furthermore, the possibility to track the beam emittance has been investigated.

  11. High-performance single CdS nanowire (nanobelt) Schottky junction solar cells with Au/graphene Schottky electrodes.

    Science.gov (United States)

    Ye, Yu; Dai, Yu; Dai, Lun; Shi, Zujin; Liu, Nan; Wang, Fei; Fu, Lei; Peng, Ruomin; Wen, Xiaonan; Chen, Zhijian; Liu, Zhongfan; Qin, Guogang

    2010-12-01

    High-performance single CdS nanowire (NW) as well as nanobelt (NB) Schottky junction solar cells were fabricated. Au (5 nm)/graphene combined layers were used as the Schottky contact electrodes to the NWs (NBs). Typical as-fabricated NW solar cell shows excellent photovoltaic behavior with an open circuit voltage of ∼0.15 V, a short circuit current of ∼275.0 pA, and an energy conversion efficiency of up to ∼1.65%. The physical mechanism of the combined Schottky electrode was discussed. We attribute the prominent capability of the devices to the high-performance Schottky combined electrode, which has the merits of low series resistance, high transparency, and good Schottky contact to the CdS NW (NB). Besides, a promising site-controllable patterned graphene transfer method, which has the advantages of economizing graphene material and free from additional etching process, was demonstrated in this work. Our results suggest that semiconductor NWs (NBs) are promising materials for novel solar cells, which have potential application in integrated nano-optoelectronic systems.

  12. Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

    Science.gov (United States)

    Tomer, Dushyant

    Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect

  13. TCAD analysis of graphene silicon Schottky junction solar cell

    Science.gov (United States)

    Kuang, Yawei; Liu, Yushen; Ma, Yulong; Xu, Jing; Yang, Xifeng; Feng, Jinfu

    2015-08-01

    The performance of graphene based Schottky junction solar cell on silicon substrate is studied theoretically by TCAD Silvaco tools. We calculate the current-voltage curves and internal quantum efficiency of this device at different conditions using tow dimensional model. The results show that the power conversion efficiency of Schottky solar cell dependents on the work function of graphene and the physical properties of silicon such as thickness and doping concentration. At higher concentration of 1e17cm-3 for n-type silicon, the dark current got a sharp rise compared with lower doping concentration which implies a convert of electron emission mechanism. The biggest fill factor got at higher phos doping predicts a new direction for higher performance graphene Schottky solar cell design.

  14. Mott-Schottky analysis of thin ZnO films

    International Nuclear Information System (INIS)

    Windisch, Charles F. Jr.; Exarhos, Gregory J.

    2000-01-01

    Thin ZnO films, both native and doped with secondary metal ions, have been prepared by sputter deposition and also by casting from solutions containing a range of precursor salts. The conductivity and infrared reflectivity of these films are subsequently enhanced chemically following treatment in H 2 gas at 400 degree sign C or by cathodic electrochemical treatment in a neutral (pH=7) phosphate buffer solution. While Hall-type measurements usually are used to evaluate the electrical properties of such films, the present study investigated whether a conventional Mott-Schottky analysis could be used to monitor the change in concentration of free carriers in these films before and after chemical and electrochemical reduction. The Mott-Schottky approach would be particularly appropriate for electrochemically modified films since the measurements could be made in the same electrolyte used for the post-deposition electrochemical processing. Results of studies on sputtered pure ZnO films in ferricyanide solution were promising. Mott-Schottky plots were linear and gave free carrier concentrations typical for undoped semiconductors. Film thicknesses estimated from the Mott-Schottky data were also reasonably close to thicknesses calculated from reflectance measurements. Studies on solution-deposited films were less successful. Mott-Schottky plots were nonlinear, apparently due to film porosity. A combination of dc polarization and atomic force microscopy measurements confirmed this conclusion. The results suggest that Mott-Schottky analysis would be suitable for characterizing solution-deposited ZnO films only after extensive modeling was performed to incorporate the effects of film porosity on the characteristics of the space-charge region of the semiconductor. (c) 2000 American Vacuum Society

  15. The firms Sandvik Coromant and Walter instruments choice algorithmization

    Directory of Open Access Journals (Sweden)

    Євген Іванович Іванов

    2015-11-01

    Full Text Available This article describes the typical algorithms for choosing modern tools made by foreign firms Sandvik Coromant and Walter. The use of modern tools is effective on both new and old equipment. Algorithms ensure orderly operation of engineers in the development of new or upgrading old processes, and may also be useful for students enrolled in the specialty "Mechanical Engineering". The use of modern tools is effective on both new and old equipment. Correctly chosen tool make it possible for you to quickly recoup the cost of new equipment and significantly improve the work of the old equipment. Currently, all cutting tools can be divided into the following groups: a a solid; b composite; c assembly; d modular (dial-up. In composite cutting tools and parts theholders are attached permanently. For example, the attachment can be blocked by welding or soldering. At modular and modular cutting tools and parts are detachable. In those parts of the modular tool there are separate assembly units (modules with standardized mounting surface. Thus one and the same cutter head may be attached to a holder (mandrel housings of different configuration and function. The choice of the cutting part of such tools includes determining the shape and size of the indexable insert (SMP, the geometry of its front surface, corner radius and tool material. Selecting the holder (mandrel body includes determining its type and size. It is necessary to take into account the possibility of technological equipment (type and size of the mounting surfaces of the tool holder and tool spindle.After selecting the tool it is necessary to determine working regimes

  16. Taking Charge: Walter Sydney Adams and the Mount Wilson Observatory

    Science.gov (United States)

    Brashear, R.

    2004-12-01

    The growing preeminence of American observational astronomy in the first half of the 20th century is a well-known story and much credit is given to George Ellery Hale and his skill as an observatory-building entrepreneur. But a key figure who has yet to be discussed in great detail is Walter Sydney Adams (1876-1956), Hale's Assistant Director at Mount Wilson Observatory. Due to Hale's illnesses, Adams was Acting Director for much of Hale's tenure, and he became the second Director of Mount Wilson from 1923 to 1946. Behind his New England reserve Adams was instrumental in the growth of Mount Wilson and thus American astronomy in general. Adams was hand-picked by Hale to take charge of stellar spectroscopy work at Yerkes and Mount Wilson and the younger astronomer showed tremendous loyalty to Hale and Hale's vision throughout his career. As Adams assumed the leadership role at Mount Wilson he concentrated on making the observatory a place where researchers worked with great freedom but maintain a high level of cooperation. This paper will concentrate on Adams's early years and look at his growing relationship with Hale and how he came to be the central figure in the early history of Mount Wilson as both a solar and stellar observatory. His education, his years at Dartmouth and Yerkes (including his unfortunate encounter with epsilon Leonis), and his formative years on Mount Wilson are all important in learning how he shaped the direction of Mount Wilson and the development of American astronomy in the first half of the 20th century. This latter history cannot be complete until we bring Adams into better focus.

  17. Schottky contact analysis of photovoltaic chalcopyrite thin film absorbers

    International Nuclear Information System (INIS)

    Schlenker, E.; Mertens, V.; Parisi, J.; Reineke-Koch, R.; Koentges, M.

    2007-01-01

    Current-voltage and capacitance-voltage measurements serve to analyze thermally evaporated Al Schottky contacts on Cu(In, Ga)Se 2 based photovoltaic thin film devices, either taken as grown or etched in a bromine-methanol solution. The characteristics of the Schottky contacts on the as-grown films give evidence for some dielectric layer developing between the metal and the semiconductor. Etching the semiconductor surface prior to evaporation of the Al front contact yields a pure metal-semiconductor behavior, including effects that can be attributed to an additional diode at the Mo contact. Simulations confirm the experimental results

  18. High-temperature current conduction through three kinds of Schottky diodes

    International Nuclear Information System (INIS)

    Fei, Li; Xiao-Ling, Zhang; Yi, Duan; Xue-Song, Xie; Chang-Zhi, Lü

    2009-01-01

    Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I–V–T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  19. Walter Benjamin's concept of aura and the cultural industry

    Directory of Open Access Journals (Sweden)

    Bráulio Santos Rabelo de Araújo

    2010-12-01

    Full Text Available Trata-se de uma análise do texto A obra de arte na era da reprodutibilidade técnica, de 1935, de Walter Benjamin, no qual o autor analisa as alterações provocadas pelas novas técnicas de produção artística na esfera da cultura, e desenvolve, como elemento principal, a tese de a reprodutibilidade técnica provocar a superação da aura pela obra de arte. Tendo como apoio o contraste do texto de Benjamin com o texto A indústria cultural: O esclarecimento como mistificação das massas, de Theodor Adorno e Max Horkheimer, de 1947, e a observação da produção do cinema, da música e do livro (artes necessariamente reprodutíveis, este artigo (a analisa a tese da superação do conceito de aura pela obra de arte na era da reprodutibilidade técnica, (b contrasta essa tese com a reflexão sobre indústria cultural de Adorno e Horkheimer e com as características da obra de arte produzida no decorrer do século 20 e início do século 21, e (c apresenta as contribuições que podem ser retiradas dessa análise para a atual reflexão a respeito dos impactos da Internet e das tecnologias digitais sobre a produção cultural contemporânea. Como resultado principal e do qual decorre outras conclusões, o artigo considera que as técnicas analisadas por Benjamin, apesar de terem tornado a obra de arte independente de um substrato único, não a emanciparam de seu caráter aurático. Os elementos centrais da aura (autenticidade e unicidade não foram superados, mas, ao contrário, adaptaram-se às mudanças técnicas, adaptação essa que ocorreu em torno da industrialização, a qual marcou a produção cultural no século 20.

  20. Performance enhancement of polymer Schottky diode by doping pentacene

    International Nuclear Information System (INIS)

    Kang, K.S.; Chen, Y.; Lim, H.K.; Cho, K.Y.; Han, K.J.; Kim, Jaehwan

    2009-01-01

    Schottky diodes have been fabricated using pentacene-doped poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) as a semiconducting material. To understand the fundamental properties of the pentacene-doped PEDOT:PSS, ultraviolet visible (UV) absorption spectroscopy was employed. It was found that a significant amount of pentacene can dissolve in n-methylpyrrolidone solvent. No characteristic absorption peak of pentacene was observed in the UV-visible spectra of PEDOT:PSS films doped with pentacene,. However, the absorption intensity of the doped PEDOT:PSS films increased as the pentacene concentration increased in particular in the UV region. The atomic force microscope images show that the surface roughnesses of PEDOT:PSS films increased as the pentacene concentration increased. Three-layer Schottky diodes comprising Al/PEDOT:PSS/Au or Al/PEDOT:PSS-pentacene/Au were fabricated. The maximum forward currents of non-doped and doped Schottky diodes were 4.8 and 440 μA/cm 2 at 3.3 MV/m, respectively. The forward current increased nearly two orders of magnitude for Schottky diode doped with 11.0 wt.% of pentacene.

  1. Silicon Schottky photovoltaic diodes for solar energy conversion

    Science.gov (United States)

    Anderson, W. A.

    1975-01-01

    Various factors in Schottky barrier solar cell fabrication are evaluated in order to improve understanding of the current flow mechanism and to isolate processing variables that improve efficiency. Results of finger design, substrate resistivity, surface finishing and activation energy studies are detailed. An increased fill factor was obtained by baking of the vacuum system to remove moisture.

  2. Walter Reed Army Institute of Research Annual Progress Report Fiscal Year 1983

    Science.gov (United States)

    1983-10-01

    has been whole rickettsiae derived either from emhryonated yolk sacs or primary chick embryo tisque riilture calls inactivated by gamma irradiation...Prcqress Primary chi ck embryo cell c il tur.ý derived Rickettsla tsqutsigamthsbi was partially purified by a series of differential centriftgations...8,10). The question of uptake, destiny , location and fate of R. tsutsugameshi is both infected and uninfected chigger Tines has not been studied by

  3. Walter Reed Army Institute of Research Annual Progress Report, Fiscal Year 1981.

    Science.gov (United States)

    1981-10-01

    erythrocytes. American Society of Nephrology (14th Annual Meeting). Articles Published, In Press or In Review 1. Webster HK, Haut MJ, Martin LK...is assessed by determining the extent of sequence variation in inmunologically unique variant-specific surface coat glycoproteina Peptide mapping of...Weissman, W.: Cholinergic Stimulated Ca+4 - Uptake and cGMP Formation in Human Red Blood Cells. Clln.cal Research 29, 1981. Articles Published, In Press or

  4. Walter Reed Army Institute of Research Annual Progress Report for Fiscal Year 1983

    Science.gov (United States)

    1984-10-01

    These secretions cause ever increasing distension of the bowel. Additionally, these loops have never been exposed to nutrients. This disuse may...resulting neuro- muscular block causes such effects as weakness and fasciculation. The accumulation of acetylcholine is thought to cause the persistent

  5. Walter Reed Army Institute of Research Annual Progress Report, Fiscal Year 1984

    Science.gov (United States)

    1984-10-01

    Caracterizagao de estoques de Leishmania isolados de cio e de roedor (Proechimys inheringi denigratus) da regio sudeste da Bahia , atraves de anticorpos...monoclonais. XX Congresso da Soc. Brasileira de Medir.ina Tropical, Salvador, Bahia . Hembree, S. 1984. Malaria diagnosis, culture and drug sensitivity...SUBJECT AREAS I 1k. 0613 Microbiolo)gy 0603 Biology 13 START DATE 1A. ESTIMATED COMPLETIONcOATE I5. PUNOING ORGANIZATION 𔄀. PERFORMANCE METHOO 82 10 1

  6. Services to Operate and Maintain Walter Reed Army Institute of Research’s (WRAIR) Microwave Facility.

    Science.gov (United States)

    1994-06-20

    Low Average Power Microwave Pulses (Protocol N-11-88) ............................................... 26 Preliminary Thermometric Studies on Microwave...different material is being used in the manufacturing of new switches which were structurally reengineered. The switches are now mounted on aluminum standoffs...also investigating the possibility of replacing the aluminum HV components with stainless steel duplicates, as aluminum has been observed oxidizing

  7. Walter Reed Army Institute of Research Annual Progress Report Fiscal Year 1982.

    Science.gov (United States)

    1982-10-01

    Anopheles darlingi In the Amazon Basin" presented at Johns Hopkins University, School of Public Health, Baltimore, MD Feb 1982. Roberts, D.R...Brazil, Colombia and Peru had similar respirometric • S- profiles ana slow catabolic rates distinguishing them from ;v other species and strains. |yj...memory procedures in rodents . Efforts are continuing to develop an understanding of the neural control of limb movement. Earlier results from

  8. Walter Reed Army Institute of Research Annual Progress Report, Fiscal Year 1980

    Science.gov (United States)

    1980-10-01

    Pathophysiology of Reflux Esophagitis Background and Objectives The human esophagus may be exposed to acid and/or alkaline gastric juice during periods...from the pyloric reflux of alkaline duodenal contents into the stomach. This exposure of the esophageal mucosa to gastric contents is thought to result...in esophagitis . One argument in support of this contention is the observation that reducing gastro - esophageal junction, leads to disappearance of

  9. The Rolf and Gertrud Dahlgren Prize for 2017 Awarded to Hans Walter Lack

    DEFF Research Database (Denmark)

    Friis, Ib

    2018-01-01

    The reasons for awarding the Rolf and Gertrud Dahlgren Prize to Hans Walter Lack are summarised and the prize described. It is also mentioned that Rosén's Linnaeus Medal in Gold was awarded to Arne Strid at the same ceremony.......The reasons for awarding the Rolf and Gertrud Dahlgren Prize to Hans Walter Lack are summarised and the prize described. It is also mentioned that Rosén's Linnaeus Medal in Gold was awarded to Arne Strid at the same ceremony....

  10. Organic modification of metal / semiconductor Schottky contacts

    Energy Technology Data Exchange (ETDEWEB)

    Mendez Pinzon, H.A.

    2006-07-10

    In the present work a Metal / organic / inorganic semiconductor hybrid heterostructure (Ag / DiMe-PTCDI / GaAs) was built under UHV conditions and characterised in situ. The aim was to investigate the influence of the organic layer in the surface properties of GaAs(100) and in the electrical response of organic-modified Ag / GaAs Schottky diodes. The device was tested by combining surface-sensitive techniques (Photoemission spectroscopy and NEXAFS) with electrical measurements (current-voltage, capacitance-voltage, impedance and charge transient spectroscopies). Core level examination by PES confirms removal of native oxide layers on sulphur passivated (S-GaAs) and hydrogen plasma treated GaAs(100) (H+GaAs) surfaces. Additional deposition of ultrathin layers of DiMe-PTCDI may lead to a reduction of the surface defects density and thereby to an improvement of the electronic properties of GaAs. The energy level alignment through the heterostructure was deduced by combining UPS and I-V measurements. This allows fitting of the I-V characteristics with electron as majority carriers injected over a barrier by thermionic emission as a primary event. For thin organic layers (below 8 nm thickness) several techniques (UPS, I-V, C-V, QTS and AFM) show non homogeneous layer growth, leading to formation of voids. The coverage of the H+GaAs substrate as a function of the nominal thickness of DiMe-PTCDI was assessed via C-V measurements assuming a voltage independent capacitance of the organic layer. The frequency response of the device was evaluated through C-V and impedance measurements in the range 1 kHz-1 MHz. The almost independent behaviour of the capacitance in the measured frequency range confirmed the assumption of a near geometrical capacitor, which was used for modelling the impedance with an equivalent circuit of seven components. From there it was found a predominance of the space charge region impedance, so that A.C. conduction can only takes place through the

  11. Seeing and Playing as Labor: Toward a Visual Materialist Pedagogy of Video Games through Walter Benjamin

    Science.gov (United States)

    Bulut, Ergin

    2013-01-01

    In this article, the author draws specifically on the work of Walter Benjamin and engages with the world of video games by focusing on the constitution of labor as it unfolds in modding practices, as well as approaching the very act of seeing labor in a highly visual culture where value is extracted not just through the labor process but also…

  12. Le cercle mythique: Walter Benjamin sur la politique et son interruption

    NARCIS (Netherlands)

    van Rooden, A.

    2014-01-01

    This contribution starts from the idea that it is not so much pre-modern political orders that appeal to mythical logic, but contemporary ones. Lacking an external authority, contemporary political orders cannot but erect themselves in an act of auto-constitution. With reference to Walter Benjamin’s

  13. Meeting Opposites: The Political Theologies of Walter Benjamin and Carl Schmitt

    NARCIS (Netherlands)

    de Wilde, M.

    2011-01-01

    This article analyzes the critical dialogue between Walter Benjamin and Carl Schmitt, to which a letter and several references in their work testify. It shows how affinities and differences between their respective positions can be explained from a shared theologico-political approach. Both authors

  14. Notas sobre narração e experiência em Walter Benjamin

    Directory of Open Access Journals (Sweden)

    Wagner de Avila Quevedo

    2008-12-01

    Full Text Available O objetivo deste texto é o de elucidar alguns escritos clássicos sobre o conceito de experiência (Erfahrung em Walter Benjamin, mostrando sua relação com a narração (Erzählung e a memória.

  15. Magic, Mimesis, and Revolutionary Praxis: Illuminating Walter Benjamin's Rhetoric of Redemption.

    Science.gov (United States)

    DeChaine, D. Robert

    2000-01-01

    Outlines the rhetorical contributions of Walter Benjamin, who attempted to develop a social critique arguing for the decisive function of critical intervention. Suggests Benjamin's insights about the liberatory role of the engaged social agent warrant closer attention. Proposes his ideas provide useful avenues for examining contemporary texts and…

  16. Enlightening City Childhoods: Walter Benjamin's Berlin and Erich Kästner's Dresden

    Science.gov (United States)

    Lathey, Gillian

    2016-01-01

    Walter Benjamin, cultural critic and philosopher, compiled "Berlin childhood around 1900" (trans. Howard Eiland, 2006) while in exile from Germany in the early 1930s, filtering impressions of a privileged childhood through a politicised adult consciousness. Erich Kästner, journalist, poet, satirist and author of the children's classic…

  17. Virtualizing the Word: Expanding Walter Ong's Theory of Orality and Literacy through a Culture of Virtuality

    Science.gov (United States)

    Dempsey, Jennifer Camille

    2014-01-01

    This dissertation seeks to create a vision for virtuality culture through a theoretical expansion of Walter Ong's literacy and orality culture model. It investigates the ubiquitous and multimodal nature of the virtuality cultural phenomenon that is mediated by contemporary technology and not explained by pre-existing cultural conventions. Through…

  18. Critique of art : Walter Benjamin and Theodor W. Adorno on art criticism

    NARCIS (Netherlands)

    Lijster, Thijs Erik

    2012-01-01

    Kunstkritiek vervult een cruciale rol als medium tussen het kunstwerk en de maatschappelijke werkelijkheid. Dat concludeert promovendus Thijs Lijster. Daarbij moet kunstkritiek, in navolging van Walter Benjamin en Theodor Adorno, niet in de eerste plaats opgevat worden als het beoordelen van

  19. 77 FR 59899 - Proposed Information Collection; Comment Request; Coastal Zone Management Act Walter B. Jones and...

    Science.gov (United States)

    2012-10-01

    ... Collection; Comment Request; Coastal Zone Management Act Walter B. Jones and NOAA Excellence Awards AGENCY... approved information collection. The 1990 reauthorization of the Coastal Zone Management Act (CZMA) authorized an awards program to ``implement a program to promote excellence in coastal zone management by...

  20. Taking Care of Business: Walter Carpenter and the Management of American Enterprise.

    Science.gov (United States)

    Cheape, Charles W.

    1996-01-01

    Evaluates the life and career of DuPont corporate executive, Walter Carpenter, and uses it to illustrate the rise of the managerial class. Neither owners nor entrepreneurs, managers like Carpenter used their intelligence and skill to reorganize and expand the companies the companies where they worked. (MJP)

  1. Book review: Decolonisation and border thinking: Walter D. Mignolo, disobeying modern reason

    Directory of Open Access Journals (Sweden)

    Jordi Quero

    2015-12-01

    Full Text Available Mignolo, Walter D. Habitar la frontera: Sentir y pensar la descolonialidad (Antología, 1999-2014. Carballo, Francisco y Herrera Robles, Luis Alfonso (prólogo y selección. CIDOB, 2015 505 págs.

  2. Walter Scandale receives the decoration of Knight of the Order of Merit of the Italian Republic

    CERN Multimedia

    2008-01-01

    On 9 December 2008, Walter Scandale, a member of the EN Department, received the decoration of Knight of the Order of Merit of the Italian Republic, one of Italy's highest decorations. He was awarded the medal by the Consul-General of Italy in Geneva.

  3. Towards a Critique of Educative Violence: Walter Benjamin and "Second Education"

    Science.gov (United States)

    Charles, Matthew

    2016-01-01

    Although modern systems of mass education are typically defined in their opposition to violence, it has been argued that it is only through an insistent and critical focus upon violence that radical thought can be sustained. This article seeks to take up this challenge in relation to Walter Benjamin's lesser known writings on education. Benjamin…

  4. "Cracking Open the Natural Teleology": Walter Benjamin, Charles Fourier and the Figure of the Child

    Science.gov (United States)

    Dolbear, Sam; Proctor, Hannah

    2016-01-01

    The French utopian socialist Charles Fourier is a key figure in Walter Benjamin's "Arcades Project". For Benjamin, one of the most significant aspects of Fourier's utopian vision was its conceptualisation of work as a form of play. According to Fourier it would be possible to build a world around people's inherent desires. In such a…

  5. Enhancement in performance of polycarbazole-graphene nanocomposite Schottky diode

    International Nuclear Information System (INIS)

    Pandey, Rajiv K.; Singh, Arun Kumar; Prakash, Rajiv

    2013-01-01

    We report formation of polycarbazole (PCz)–graphene nanocomposite over indium tin oxide (ITO) coated glass substrate using electrochemical technique for fabrication of high performance Schottky diodes. The synthesized nanocomposite is characterized before fabrication of devices for confirmation of uniform distribution of graphene nanosheets in the polymer matrix. Pure PCz and PCz-graphene nanocomposites based Schottky diodes are fabricated of configuration Al/PCz/ITO and Al/PCz-graphene nanocomposite/ITO, respectively. The current density–voltage (J-V) characteristics and diode performance parameters (such as the ideality factor, barrier height, and reverse saturation current density) are compared under ambient condition. Al/PCz-graphene nanocomposite/ITO device exhibits better ideality factor in comparison to the device formed using pure PCz. It is also observed that the Al/PCz-graphene nanocomposite/ITO device shows large forward current density and low turn on voltage in comparison to Al/PCz/ITO device

  6. Monte Carlo modelling of Schottky diode for rectenna simulation

    Science.gov (United States)

    Bernuchon, E.; Aniel, F.; Zerounian, N.; Grimault-Jacquin, A. S.

    2017-09-01

    Before designing a detector circuit, the electrical parameters extraction of the Schottky diode is a critical step. This article is based on a Monte-Carlo (MC) solver of the Boltzmann Transport Equation (BTE) including different transport mechanisms at the metal-semiconductor contact such as image force effect or tunneling. The weight of tunneling and thermionic current is quantified according to different degrees of tunneling modelling. The I-V characteristic highlights the dependence of the ideality factor and the current saturation with bias. Harmonic Balance (HB) simulation on a rectifier circuit within Advanced Design System (ADS) software shows that considering non-linear ideality factor and saturation current for the electrical model of the Schottky diode does not seem essential. Indeed, bias independent values extracted in forward regime on I-V curve are sufficient. However, the non-linear series resistance extracted from a small signal analysis (SSA) strongly influences the conversion efficiency at low input powers.

  7. A charge-based model of Junction Barrier Schottky rectifiers

    Science.gov (United States)

    Latorre-Rey, Alvaro D.; Mudholkar, Mihir; Quddus, Mohammed T.; Salih, Ali

    2018-06-01

    A new charge-based model of the electric field distribution for Junction Barrier Schottky (JBS) diodes is presented, based on the description of the charge-sharing effect between the vertical Schottky junction and the lateral pn-junctions that constitute the active cell of the device. In our model, the inherently 2-D problem is transformed into a simple but accurate 1-D problem which has a closed analytical solution that captures the reshaping and reduction of the electric field profile responsible for the improved electrical performance of these devices, while preserving physically meaningful expressions that depend on relevant device parameters. The validation of the model is performed by comparing calculated electric field profiles with drift-diffusion simulations of a JBS device showing good agreement. Even though other fully 2-D models already available provide higher accuracy, they lack physical insight making the proposed model an useful tool for device design.

  8. Investigation on a radiation tolerant betavoltaic battery based on Schottky barrier diode

    International Nuclear Information System (INIS)

    Liu Yebing; Hu Rui; Yang Yuqing; Wang Guanquan; Luo Shunzhong; Liu Ning

    2012-01-01

    An Au–Si Schottky barrier diode was studied as the energy conversion device of betavoltaic batteries. Its electrical performance under radiation of Ni-63 and H-3 sources and radiation degradation under Am-241 were investigated and compared with those of the p–n junction. The results show that the Schottky diode had a higher I sc and harder radiation tolerance but lower V oc than the p–n junction. The results indicated that the Schottky diode can be a promising candidate for energy conversion of betavoltaic batteries. - Highlights: ► The Schottky diode was used as the converter of the betavoltaic battery. ► The radiation damage of converter was accelerated by using alpha particles. ► The Schottky diode has higher radiation resistance than that of the p–n junction. ► The Schottky diode could still be a promising converter of the betavoltaic battery.

  9. Influence of interface inhomogeneities in thin-film Schottky diodes

    Science.gov (United States)

    Wilson, Joshua; Zhang, Jiawei; Li, Yunpeng; Wang, Yiming; Xin, Qian; Song, Aimin

    2017-11-01

    The scalability of thin-film transistors has been well documented, but there have been very few investigations into the effects of device scalability in Schottky diodes. Indium-gallium-zinc-oxide (IGZO) Schottky diodes were fabricated with IGZO thicknesses of 50, 150, and 250 nm. Despite the same IGZO-Pt interface and Schottky barrier being formed in all devices, reducing the IGZO thickness caused a dramatic deterioration of the current-voltage characteristics, most notably increasing the reverse current by nearly five orders of magnitude. Furthermore, the forward characteristics display an increase in the ideality factor and a reduction in the barrier height. The origins of this phenomenon have been elucidated using device simulations. First, when the semiconductor layer is fully depleted, the electric field increases with the reducing thickness, leading to an increased diffusion current. However, the effects of diffusion only offer a small contribution to the huge variations in reverse current seen in the experiments. To fully explain this effect, the role of inhomogeneities in the Schottky barrier height has been considered. Contributions from lower barrier regions (LBRs) are found to dominate the reverse current. The conduction band minimum below these LBRs is strongly dependent upon thickness and bias, leading to reverse current variations as large as several orders of magnitude. Finally, it is demonstrated that the thickness dependence of the reverse current is exacerbated as the magnitude of the inhomogeneities is increased and alleviated in the limit where the LBRs are large enough not to be influenced by the adjacent higher barrier regions.

  10. Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

    OpenAIRE

    Tomer, D.; Rajput, S.; Hudy, L. J.; Li, C. H.; Li, L.

    2015-01-01

    Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer graphene onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current-voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decr...

  11. Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

    Directory of Open Access Journals (Sweden)

    Bisewski Damian

    2016-09-01

    Full Text Available This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.

  12. Metal-semiconductor Schottky barrier junctions and their applications

    CERN Document Server

    1984-01-01

    The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal­ semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the la...

  13. Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

    Energy Technology Data Exchange (ETDEWEB)

    Drummond, T.J.

    1999-03-11

    Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

  14. Silver nanowires-templated metal oxide for broadband Schottky photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Malkeshkumar; Kim, Hong-Sik; Kim, Joondong, E-mail: joonkim@inu.ac.kr [Photoelectric and Energy Device Application Lab (PEDAL) and Department of Electrical Engineering, Incheon National University, 119 Academy Rd. Yeonsu, Incheon 406772 (Korea, Republic of); Park, Hyeong-Ho [Applied Device and Material Lab., Device Technology Division, Korea Advanced Nano Fab Center (KANC), Suwon 443270 (Korea, Republic of)

    2016-04-04

    Silver nanowires (AgNWs)-templated transparent metal oxide layer was applied for Si Schottky junction device, which remarked the record fastest photoresponse of 3.4 μs. Self-operating AgNWs-templated Schottky photodetector showed broad wavelength photodetection with high responsivity (42.4 A W{sup −1}) and detectivity (2.75 × 10{sup 15} Jones). AgNWs-templated indium-tin-oxide (ITO) showed band-to-band excitation due to the internal photoemission, resulting in significant carrier collection performances. Functional metal oxide layer was formed by AgNWs-templated from ITO structure. The grown ITO above AgNWs has a cylindrical shape and acts as a thermal protector of AgNWs for high temperature environment without any deformation. We developed thermal stable AgNWs-templated transparent oxide devices and demonstrated the working mechanism of AgNWs-templated Schottky devices. We may propose the high potential of hybrid transparent layer design for various photoelectric applications, including solar cells.

  15. Process for preparing schottky diode contacts with predetermined barrier heights

    Science.gov (United States)

    Chang, Y. Austin; Jan, Chia-Hong; Chen, Chia-Ping

    1996-01-01

    A process is provided for producing a Schottky diode having a preselected barrier height .phi..sub.Bn. The substrate is preferably n-GaAs, the metallic contact is derived from a starting alloy of the Formula [.SIGMA.M.sub..delta. ](Al.sub.x Ga.sub.1-x) wherein: .SIGMA.M is a moiety which consists of at least one M, and when more than one M is present, each M is different, M is a Group VIII metal selected from the group consisting of nickel, cobalt, ruthenium, rhodium, indium and platinum, .delta. is a stoichiometric coefficient whose total value in any given .SIGMA.M moiety is 1, and x is a positive number between 0 and 1 (that is, x ranges from greater than 0 to less than 1). Also, the starting alloy is capable of forming with the substrate a two phase equilibrium reciprocal system of the binary alloy mixture [.SIGMA.M.sub..delta. ]Ga-[.SIGMA.M.sub..delta. ]Al-AlAs-GaAs. When members of an alloy subclass within this Formula are each preliminarily correlated with the barrier height .phi..sub.Bn of a contact producable therewith, then Schottky diodes of predetermined barrier heights are producable by sputtering and annealing. Further provided are the product Schottky diodes that are produced according to this process.

  16. Successful observation of Schottky signals at the Tevatron collider

    International Nuclear Information System (INIS)

    Goldberg, D.A.; Lambertson, G.R.

    1989-08-01

    We have constructed a Schottky detector for the Tevatron collider in the form of a high-Q (∼5000) cavity which operates at roughly 2 GHz, well above the frequency at which the Tevatron's single-bunch frequency spectrum begins to roll off. Initial spectra obtained from the detector show clearly observable Schottky betatron lines, free of coherent contaminants; also seen are the ''common-mode'' longitudinal signals due to the offset of the beam from the detector center. The latter signals indicate that at 2 GHz, the coherent single-bunch spectrum from the detector is reduced by >80 dB; therefore, in normal collider operation, the Schottky betatron lines are >40 dB greater than their coherent counterparts. We describe how the data we have obtained give information on transverse and longitudinal emittances, synchrotron frequency, and betatron tunes, as well as reveal what may be previously unobserved phenomena. Space limitations restrict us to presenting only as much data as should be necessary to convince even the skeptical reader of the validity of the claim made in the paper's title. 3 refs., 2 figs

  17. Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

    Science.gov (United States)

    Navarro, Dondee; Herrera, Fernando; Zenitani, Hiroshi; Miura-Mattausch, Mitiko; Yorino, Naoto; Jürgen Mattausch, Hans; Takusagawa, Mamoru; Kobayashi, Jun; Hara, Masafumi

    2018-04-01

    A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS is accomplished by modeling the distributed resistance induced by the p+ implant developed for minimizing the leakage current at reverse bias. Only the geometrical features of the p+ implant are necessary to model the distributed resistance. Reproduction of 4H-SiC SBD and JBS current-voltage characteristics with the developed compact model are validated against two-dimensional (2D) device-simulation results as well as measurements at different temperatures.

  18. Walter Reed Army Medical Center (WRAMC) and Office of Management and Budget (OMB) Circular A-76: Implications for the Future

    National Research Council Canada - National Science Library

    Grasso, Valerie B

    2007-01-01

    This report examines the issues surrounding the recent Walter Reed public-private competition conducted under OMB Circular A-76 and its potential impact on future Department of Defense competitions...

  19. The neurosurgeon as baseball fan and inventor: Walter Dandy and the batter's helmet.

    Science.gov (United States)

    Brewster, Ryan; Bi, Wenya Linda; Smith, Timothy R; Gormley, William B; Dunn, Ian F; Laws, Edward R

    2015-07-01

    Baseball maintains one of the highest impact injury rates in all athletics. A principal causative factor is the "beanball," referring to a pitch thrown directly at a batter's head. Frequent morbidities elicited demand for the development of protective gear development in the 20th century. In this setting, Dr. Walter Dandy was commissioned to design a "protective cap" in 1941. His invention became widely adopted by professional baseball and inspired subsequent generations of batting helmets. As a baseball aficionado since his youth, Walter Dandy identified a natural partnership between baseball and medical practice for the reduction of beaning-related brain injuries. This history further supports the unique position of neurosurgeons to leverage clinical insights, inform innovation, and expand service to society.

  20. Jean-Louis Déotte, Walter Benjamin et la forme plastique. Architecture, technique, lieux

    OpenAIRE

    Brabant, Dominik

    2014-01-01

    Une longue fréquentation de Walter Benjamin a permis à Jean-Louis Déotte de construire, progressivement, par touches successives et motifs récurrents sans cesse repris et retravaillés, une figure de l’œuvre qui n’en soit pas la simple exégèse toujours recommencée, mais bien la reconfiguration constante de son lieu, du site de son avoir-lieu, si l’on considère l’œuvre-Benjamin à l’image d’un événement. Walter Benjamin et la forme plastique constitue à cet égard une étape importante, sans postu...

  1. The creation of an Alternative Subjectivity in Walter Mosley's Detective Novels.

    OpenAIRE

    Reyes Torres, Agustín

    2008-01-01

    Walter Mosley reappropriates the detective conventions to represent the American society of the 1950s and 1960s from a marginal perspective. He creates a black private eye, Easy Rawlins, whose profile mirrors that of his white counterparts but also subverts it. This thesis analyzes Raymond Chandlers canonical work The Simple Art of Murder and establish those traits that characterize Easy Rawlins. Likewise, it compares Mosley and Chester Himess black detective heroes and highlight the trait...

  2. Effects of electron-irradiation on electrical properties of AgCa/Si Schottky diodes

    International Nuclear Information System (INIS)

    Harmatha, L.; Zizka, M.; Sagatova, A.; Nemec, M.; Hybler, P.

    2013-01-01

    This contribution presents the results of the current-voltage I-V and the capacitance-voltage C-V measurement on the Schottky diodes with the AgCa gate on the silicon n-type substrate. The Si substrate was irradiated by 5 MeV electrons with a different dose value before the Schottky diode preparation. (authors)

  3. Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

    NARCIS (Netherlands)

    Chasin, A.; Simoen, E.; Bhoolokam, A.; Nag, M.; Genoe, J.; Gielen, G.; Heremans, P.

    2014-01-01

    The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier

  4. Schottky barrier CdTe(Cl) detectors for planetary missions

    International Nuclear Information System (INIS)

    Eisen, Yosef; Floyd, Samuel

    2002-01-01

    Schottky barrier cadmium telluride (CdTe) radiation detectors of dimensions 2mm x 2mm x 1mm and segmented monolithic 3cm x 3 cm x 1mm are under study at GSFC for future NASA planetary instruments. These instruments will perform x-ray fluorescence spectrometry of the surface and monitor the solar x-ray flux spectrum, the excitation source for the characteristic x-rays emitted from the planetary body. The Near Earth Asteroid Rendezvous (NEAR) mission is the most recent example of such a remote sensing technique. Its x-ray fluorescence detectors were gas proportional counters with a back up Si PIN solar monitor. Analysis of NEAR data has shown the necessity to develop a solar x-ray detector with efficiency extending to 30keV. Proportional counters and Si diodes have low sensitivity above 9keV. Our 2mm x 2mm x 1mm CdTe operating at -30 degree sign C possesses an energy resolution of 250eV FWHM for 55Fe with unit efficiency to up to 30keV. This is an excellent candidate for a solar monitor. Another ramification of the NEAR data is a need to develop a large area detector system, 20-30 cm2, with cosmic ray charged particle rejection, for measuring the characteristic radiation. A 3cm x 3cm x 1mm Schottky CdTe segmented monolithic detector is under investigation for this purpose. A tiling of 2-3 such detectors will result in the desired area. The favorable characteristics of Schottky CdTe detectors, the system design complexities when using CdTe and its adaptation to future missions will be discussed

  5. Schottky barrier parameters and structural properties of rapidly annealed Zr Schottky electrode on p-type GaN

    Science.gov (United States)

    Rajagopal Reddy, V.; Asha, B.; Choi, Chel-Jong

    2017-06-01

    The Schottky barrier junction parameters and structural properties of Zr/p-GaN Schottky diode are explored at various annealing temperatures. Experimental analysis showed that the barrier height (BH) of the Zr/p-GaN Schottky diode increases with annealing at 400 °C (0.92 eV (I-V)/1.09 eV (C-V)) compared to the as-deposited one (0.83 eV (I-V)/0.93 eV (C-V)). However, the BH decreases after annealing at 500 °C. Also, at different annealing temperatures, the series resistance and BH are assessed by Cheung's functions and their values compared. Further, the interface state density (N SS) of the diode decreases after annealing at 400 °C and then somewhat rises upon annealing at 500 °C. Analysis reveals that the maximum BH is obtained at 400 °C, and thus the optimum annealing temperature is 400 °C for the diode. The XPS and XRD analysis revealed that the increase in BH may be attributed to the creation of Zr-N phases with increasing annealing up to 400 °C. The BH reduces for the diode annealed at 500 °C, which may be due to the formation of Ga-Zr phases at the junction. The AFM measurements reveal that the overall surface roughness of the Zr film is quite smooth during rapid annealing process. Project supported by the R&D Program for Industrial Core Technology (No. 10045216) and the Transfer Machine Specialized Lighting Core Technology Development Professional Manpower Training Project (No. N0001363) Funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea.

  6. All-back-Schottky-contact thin-film photovoltaics

    Science.gov (United States)

    Nardone, Marco

    2016-02-01

    The concept of All-Back-Schottky-Contact (ABSC) thin-film photovoltaic (TFPV) devices is introduced and evaluated using 2D numerical simulation. Reach-through Schottky junctions due to two metals of different work functions in an alternating, side-by-side pattern along the non-illuminated side generate the requisite built-in field. It is shown that our simulation method quantitatively describes existing data for a recently demonstrated heterojunction thin-film cell with interdigitated back contacts (IBCs) of one metal type. That model is extended to investigate the performance of ABSC devices with bimetallic IBCs within a pertinent parameter space. Our calculations indicate that 20% efficiency is achievable with micron-scale features and sufficient surface passivation. Bimetallic, micron-scale IBCs are readily fabricated using photo-lithographic techniques and the ABSC design allows for optically transparent surface passivation layers that need not be electrically conductive. The key advantages of the ABSC-TFPV architecture are that window layers, buffer layers, heterojunctions, and module scribing are not required because both contacts are located on the back of the device.

  7. Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

    Science.gov (United States)

    Di Bartolomeo, Antonio; Luongo, Giuseppe; Giubileo, Filippo; Funicello, Nicola; Niu, Gang; Schroeder, Thomas; Lisker, Marco; Lupina, Grzegorz

    2017-06-01

    We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 \\text{A} {{\\text{W}}-1} and a normalized detectivity higher than 3.5× {{10}12} \\text{cm} \\text{H}{{\\text{z}}1/2} {{\\text{W}}-1} in the visible range. It exhibits a photocurrent exceeding the forward current because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. We perform extensive I-V and C-V characterization at different temperatures and we measure a zero-bias Schottky barrier height of 0.52 eV at room temperature, as well as an effective Richardson constant A **  =  4× {{10}-5} \\text{A} \\text{c}{{\\text{m}}-2} {{\\text{K}}-2} and an ideality factor n≈ 3.6 , explained by a thin (<1 nm) oxide layer at the Gr/Si interface.

  8. Temperature dependent simulation of diamond depleted Schottky PIN diodes

    International Nuclear Information System (INIS)

    Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti; Goodnick, Stephen M.; Koeck, Franz A. M.; Nemanich, Robert J.

    2016-01-01

    Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco ® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

  9. Temperature dependent simulation of diamond depleted Schottky PIN diodes

    Science.gov (United States)

    Hathwar, Raghuraj; Dutta, Maitreya; Koeck, Franz A. M.; Nemanich, Robert J.; Chowdhury, Srabanti; Goodnick, Stephen M.

    2016-06-01

    Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

  10. Temperature dependent simulation of diamond depleted Schottky PIN diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti; Goodnick, Stephen M. [Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-8806 (United States); Koeck, Franz A. M.; Nemanich, Robert J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-8806 (United States)

    2016-06-14

    Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.

  11. The nature of electrical interaction of Schottky contacts

    International Nuclear Information System (INIS)

    Torkhov, N. A.

    2011-01-01

    Electrical interaction between metal-semiconductor contacts combined in a diode matrix with a Schottky barrier manifests itself in an appreciable variation in their surface potentials and static current-volt-characteristics. The necessary condition for appearance of electrical interaction between such contacts consists in the presence of a peripheral electric field (a halo) around them; this field propagates to a fairly large distances ( i,j ), concentration of doping impurities in the semiconductor N D , and physical nature of a metal-semiconductor system with a Schottky barrier (with the barrier height φ b ). It is established that bringing the contacts closer leads to a relative decrease in the threshold value of the “dead” zone in the forward current-voltage characteristics, an increase in the effective height of the barrier, and an insignificant increase in the nonideality factor. An increase in the total area of contacts (a total electric charge in the space charge region) in the matrix brings about an increase in the threshold value of the “dead” zone, a relative decrease in the effective barrier height, and an insignificant increase in the ideality factor.

  12. Electrical characterization of organic-on-inorganic semiconductor Schottky structures

    International Nuclear Information System (INIS)

    Guellue, Oe; Tueruet, A; Asubay, S

    2008-01-01

    We prepared a methyl red/p-InP organic-inorganic (OI) Schottky device formed by evaporation of an organic compound solution directly to a p-InP semiconductor wafer. The value of the optical band gap energy of the methyl red organic film on a glass substrate was obtained as 2.0 eV. It was seen that the Al/methyl red/p-InP contacts showed a good rectifying behavior. An ideality factor of 2.02 and a barrier height (Φ b ) of 1.11 eV for the Al/methyl red/p-InP contact were determined from the forward bias I-V characteristics. It was seen that the value of 1.11 eV obtained for Φ b for the Al/methyl red/p-InP contact was significantly larger than the value of 0.83 eV for conventional Al/p-InP Schottky diodes. Modification of the interfacial potential barrier for the Al/p-InP diode was achieved using a thin interlayer of the methyl red organic semiconductor. This ascribed to the fact that the methyl red interlayer increases the effective Φ b by influencing the space charge region of InP

  13. Measurements of Effective Schottky Barrier in Inverse Extraordinary Optoconductance Structures

    Science.gov (United States)

    Tran, L. C.; Werner, F. M.; Solin, S. A.; Gilbertson, Adam; Cohen, L. F.

    2013-03-01

    Individually addressable optical sensors with dimensions as low as 250nm, fabricated from metal semiconductor hybrid structures (MSH) of AuTi-GaAs Schottky interfaces, display a transition from resistance decreasing with intensity in micron-scale sensors (Extraordinary Optoconductance, EOC) to resistance increasing with intensity in nano-scale sensors (Inverse Extraordinary Optoconductance I-EOC). I-EOC is attributed to a ballistic to diffusive crossover with the introduction of photo-induced carriers and gives rise to resistance changes of up to 9462% in 250nm devices. We characterize the photo-dependence of the effective Schottky barrier in EOC/I-EOC structures by the open circuit voltage and reverse bias resistance. Under illumination by a 5 mW, 632.8 nm HeNe laser, the barrier is negligible and the Ti-GaAs interface becomes Ohmic. Comparing the behavior of two devices, one with leads exposed, another with leads covered by an opaque epoxy, the variation in Voc with the position of the laser can be attributed to a photovoltaic effect of the lead metal and bulk GaAs. The resistance is unaffected by the photovoltaic offset of the leads, as indicated by the radial symmetry of 2-D resistance maps obtained by rastering a laser across EOC/IEOC devices. SAS has a financial interest in PixelEXX, a start-up company whose mission is to market imaging arrays.

  14. Explanation of the barrier heights of graphene Schottky contacts by the MIGS-and-electronegativity concept

    Science.gov (United States)

    Mönch, Winfried

    2016-09-01

    Graphene-semiconductor contacts exhibit rectifying properties and, in this respect, they behave in exactly the same way as a "conventional" metal-semiconductor or Schottky contacts. It will be demonstrated that, as often assumed, the Schottky-Mott rule does not describe the reported barrier heights of graphene-semiconductor contacts. With "conventional" Schottky contacts, the same conclusion was reached already in 1940. The physical reason is that the Schottky-Mott rule considers no interaction between the metal and the semiconductor. The barrier heights of "conventional" Schottky contacts were explained by the continuum of metal-induced gap states (MIGSs), where the differences of the metal and semiconductor electronegativities describe the size and the sign of the intrinsic electric-dipoles at the interfaces. It is demonstrated that the MIGS-and-electronegativity concept unambiguously also explains the experimentally observed barrier heights of graphene Schottky contacts. This conclusion includes also the barrier heights reported for MoS2 Schottky contacts with "conventional" metals as well as with graphene.

  15. Ideas as Institutions: Explaining the Air Force’s Struggle With Its Aerospace Concept

    Science.gov (United States)

    2006-04-01

    culled from Pamela S. Tolbert and Lynne G. Zucker’s “The Institutionalism of Institutional Theory ” from the Handbook of Organization Studies, ed...The Institutionalization of Institutional Theory ,” in Handbook of Organization Studies, ed. Stewart R. Clyog, Cynthia Hardy, and Walter R. Nord...Pamela S. Tolbert, published an article in The Handbook of Organization Studies (1996), entitled “The Institutionalization of Institutional Theory .” Both

  16. Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Congxin, E-mail: xiacongxin@htu.edu.cn; Xue, Bin; Wang, Tianxing; Peng, Yuting [Department of Physic, Henan Normal University, Xinxiang 453007 (China); Jia, Yu [School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

    2015-11-09

    The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

  17. New Daily Persistent Headache: Historical Review and an Interview with Dr. Walter Vanast.

    Science.gov (United States)

    Robbins, Matthew S; Vanast, Walter J; Allan Purdy, R

    2017-06-01

    New daily persistent headache (NDPH) is an idiopathic headache syndrome characterized by the abrupt onset of an unremitting, daily, continuous headache without an antecedent escalating headache pattern, and not attributable to other primary or secondary headache disorders. We review the history of NDPH in terms of its characterization and classification, and then interview Dr. Walter Vanast, the neurologist who initially described NDPH three decades ago, to gain his perspective now that there is more widespread recognition and interest in this syndrome. © 2017 American Headache Society.

  18. The sons of Caim: the race of outcasts and disinherited in Walter Benjamin and Charles Baudelaire

    Directory of Open Access Journals (Sweden)

    Ricardo André Ferreira Martins

    2014-08-01

    Full Text Available This article aims to develop a reflection essay about the philosophical and literary representation concerning the marginalized and oppressed in history, inside the works of Charles Baudelaire and Walter Benjamin. This is to ascertain and analyze how these two authors, from their respective works, allowed the proletariat gradually took the shape of an object and productive character for social and lyrical reflection, thus, in the wake of works as Flowers of Evil, the assumption of themes drawn from a tradition historically long, connected, in turn, by the recent historiographical perspective from below.

  19. L’esperienza estetica come esperienza di immagini. Walter Benjamin e Theodor W. Adorno

    Directory of Open Access Journals (Sweden)

    Elena Tavani

    2012-05-01

    Full Text Available Both Walter Benjamin and Theodor W. Adorno consider ‘aesthetical experience’ as an “image experience” assuming a power of images “to set free forces” directed to produce or support aesthetical-political (Benjamin or aesthetical-critical (Adorno requirements. Profane illumination, ‘thinkimages’, phantasmagory, dialectical images, decayed ‘aura’ and technicalized images in Benjamin’s theory of aesthetical modernity. Expressive feature or “mimetic” eloquence in nature and art countering reality, dismantled ‘aura’ in contemporary desacralized work of art, but also persisting ‘aura’ in its meaningful dimension in Adorno’s aesthetical theory.

  20. An Overview of Justice in Sir Walter Scott Waverley Novels: The Heart of Mid-Lothian

    Directory of Open Access Journals (Sweden)

    Enrique García Díaz

    2014-12-01

    Full Text Available Although Sir Walter Scott is a well-known writer most of his readers know that he became an advocate in 1792, when he was admitted to the bar. Since then Scott and other advocates walked the floor at Parliament House (home of the Faculty of Advocates and the Court of Session waiting to be hired. Scott’s own experiences as a fledgling advocate are echoed in those of Alain Fairford in his novel Redgauntlet (Scott 1824, which provides a vivid picture of Parliament House in the eighteenth century. During his life, Scott combined extensive writing and editing issues with his daily work as Clerk of Session and Sheriff-Depute of Selkirkshire. Walter Scott was not unaware of Justice and Law and The Heart of Mid-Lothian is the novel in which he introduces to the reader the Scottish Legal System during the eighteenth century. However, there are few more examples that I will explain. Aunque Sir Walter Scott es un conocido escritor, la mayoría de sus lectores saben que en 1792 se hizo abogado, cuando fue admitido en el colegio de abogados. Desde entonces Scott y otros abogados rondaron el Parlamento con la esperanza de ser contratados. Las propias experiencias de Scott como un abogado novel se reflejan en las de Alain Fairford en su novela Redgauntlet (Scott 1824, lo que ofrece una vívida imagen del Parlamento (sede de la facultad de Derecho y Tribunal Supremo en el siglo XVIII. Durante su vida, Scott compaginó una profusa actividad como escritor y editor con su trabajo diario como juez en Selkirk. Walter Scott conocía la justicia y el derecho y El corazón de Mid-Lothian es la novela en la presenta al lector el régimen jurídico de Escocia durante el siglo XVIII. Sin embargo, se explicarán algunos otros ejemplos. DOWNLOAD THIS PAPER FROM SSRN: http://ssrn.com/abstract=2543538

  1. Gothic elements in contemporary detective story : Matthew Gregory Lewis and Minette Walters compared

    Directory of Open Access Journals (Sweden)

    Vesna Marinko

    2009-12-01

    Full Text Available One of the most shocking Gothic novels was written by Matthew Gregory Lewis in 1796. His Gothic novel The Monk contains all the typical Gothic elements such as a ruined castle, aggressive villain, women in distress, the atmosphere of terror and horror and a lot more. This article analyses and compares to what extent the Gothic elements of the late 18th century survived in the contemporary detective story The Ice House (1993 written by Minette Walters and how these elements have changed.

  2. [Decriminalizing traditional Andean medicine: an interview with Walter Álvarez Quispe].

    Science.gov (United States)

    Quispe, Walter Álvarez; Loza, Carmen Beatriz

    2014-01-01

    Walter Álvarez Quispe, a Kallawaya healer and biomedical practitioner specializing in general surgery and gynecology, presents the struggle of traditional and alternative healers to get their Andean medical systems depenalized between 1960 and 1990. Bolivia was the first country in Latin America and the Caribbean to decriminalize traditional medicine before the proposals of the International Conference on Primary Health Care (Alma-Ata, 1978). The data provided by the interviewee show that the successes achieved, mainly by the Kallawayas, stem from their own independent initiative. These victories are not the result of official policies of interculturality in healthcare, although the successes achieved tend to be ascribed to them.

  3. Medicinas tradicionales andinas y su despenalización: entrevista con Walter Álvarez Quispe

    OpenAIRE

    Quispe, Walter Álvarez; Loza, Carmen Beatriz

    2014-01-01

    Walter Álvarez Quispe, terapeuta kallawaya y biomédico especializado en cirugía general y ginecología, presenta la lucha de los terapeutas tradicionales y alternativos por la depenalización de estos sistemas médicos andinos realizada entre 1960 y 1990. Bolivia se torna el primer país en América Latina y el Caribe en despenalizar la medicina tradicional antes de los planteamientos de la Conferencia Internacional sobre Atención Primaria de Salud (Alma-Ata, 1978). Los datos aportados por el entr...

  4. Graphene-Based Reversible Nano-Switch/Sensor Schottky Diode

    Science.gov (United States)

    Miranda, Felix A.; Meador, Michael A.; Theofylaktos, Onoufrios; Pinto, Nicholas J.; Mueller, Carl H.; Santos-Perez, Javier

    2010-01-01

    This proof-of-concept device consists of a thin film of graphene deposited on an electrodized doped silicon wafer. The graphene film acts as a conductive path between a gold electrode deposited on top of a silicon dioxide layer and the reversible side of the silicon wafer, so as to form a Schottky diode. By virtue of the two-dimensional nature of graphene, this device has extreme sensitivity to different gaseous species, thereby serving as a building block for a volatile species sensor, with the attribute of having reversibility properties. That is, the sensor cycles between active and passive sensing states in response to the presence or absence of the gaseous species.

  5. Electrical characterization of MEH-PPV based Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Nimith, K. M., E-mail: nimithkm@gmail.com; Satyanarayan, M. N., E-mail: satya-mn@nitk.edu.in; Umesh, G., E-mail: umesh52@gmail.com [Optoelectronics Laboratory (OEL), Department of Physics, National Institute of Technology Karnataka (NITK),Surathkal, PO Srinivasnagar, Mangalore, DK-575025 (India)

    2016-05-06

    MEH-PPV Schottky diodes with and without Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) have been fabricated and characterized. The highlight of this work is that all the fabrication and characterization steps had been carried out in the ambient conditions and the device fabrication was done without any UV-Ozone surface treatment of ITO anodes. Current Density-Voltage characteristics shows that the addition of hole injection layer (HIL) enhances the charge injection into the polymer layer by reducing the energy barrier across the Indium Tin Oxide (ITO)-Organic interface. The rectification ratio increases to 2.21 from 0.76 at 5V for multilayer devices compared to single layer devices. Further we investigated the effect of an alkali metal fluoride (LiF) by inserting a thin layer in between the organic layer and Aluminum (Al) cathode. The results of these investigations will be discussed in detail.

  6. Electrical characterization of Au/ZnO/Si Schottky contact

    International Nuclear Information System (INIS)

    Asghar, M; Mahmood, K; Faisal, M; Hasan, M A

    2013-01-01

    In this study, temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements have been performed on Au/ZnO/Si Schottky barrier diode in the range 150 – 400K. The room temperature values for ideality factor and barrier height found to be 2.68 and 0.68 eV respectively. From the temperature dependence of I–V, the ideality factor was observed to decrease with increasing temperature and barrier height increased with increasing temperature. The observed barrier height trend was disagreeing with the negative temperature coefficient for semiconductor. A deep defect with activation energy 0.57 eV below the conduction band was observed using the saturation current plot and deep level transient spectroscopy.

  7. The physics and chemistry of the Schottky barrier height

    International Nuclear Information System (INIS)

    Tung, Raymond T.

    2014-01-01

    The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface

  8. The properties of transparent TiO2 films for Schottky photodetector

    Directory of Open Access Journals (Sweden)

    Sung-Ho Park

    2017-08-01

    Full Text Available In this data, the properties of transparent TiO2 film for Schottky photodetector are presented for the research article, entitled as “High-performing transparent photodetectors based on Schottky contacts” (Patel et al., 2017 [1]. The transparent photoelectric device was demonstrated by using various Schottky metals, such as Cu, Mo and Ni. This article mainly shows the optical transmittance of the Ni-transparent Schottky photodetector, analyzed by the energy dispersive spectroscopy and interfacial TEM images for transparency to observe the interface between NiO and TiO2 film. The observation and analyses clearly show that no pinhole formation in the TiO2 film by Ni diffusion. The rapid thermal process is an effective way to form the quality TiO2 film formation without degradation, such as pinholes (Qiu et al., 2015 [2]. This thermal process may apply to form functional metal oxide layers for solar cells and photodetectors.

  9. Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field

    Science.gov (United States)

    Li, Wei; Wang, Tian-Xing; Dai, Xian-Qi; Wang, Xiao-Long; Ma, Ya-Qiang; Chang, Shan-Shan; Tang, Ya-Nan

    2017-04-01

    Using density functional theory calculations, we investigate the electronic properties of arsenene/graphene van der Waals (vdW) heterostructures by applying external electric field perpendicular to the layers. It is demonstrated that weak vdW interactions dominate between arsenene and graphene with their intrinsic electronic properties preserved. We find that an n-type Schottky contact is formed at the arsenene/graphene interface with a Schottky barrier of 0.54 eV. Moreover, the vertical electric field can not only control the Schottky barrier height but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the interface. Tunable p-type doping in graphene is achieved under the negative electric field because electrons can transfer from the Dirac point of graphene to the conduction band of arsenene. The present study would open a new avenue for application of ultrathin arsenene/graphene heterostructures in future nano- and optoelectronics.

  10. Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate the feasibility of using vertical GaN Schottky diodes for high-power rectification...

  11. High Power Ga2O3-based Schottky Diode, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Program will develop a new generation of radiation hard high-power high-voltage Ga2O3-based Schottky diode, which is suitable for applications in the space...

  12. Fabrication and characterization of 8.87 THz schottky barrier mixer diodes for mixer

    Science.gov (United States)

    Wang, Wenjie; Li, Qian; An, Ning; Tong, Xiaodong; Zeng, Jianping

    2018-04-01

    In this paper we report on the fabrication and characterization of GaAs-based THz schottky barrier mixer diodes. Considering the analyzed results as well as fabrication cost and complexity, a group of trade-off parameters was determined. Electron-beam lithography and air-bridge technique have been used to obtain schottky diodes with a cut off frequency of 8.87 THz. Equivalent values of series resistance, ideal factor and junction capacitance of 10.2 (1) Ω, 1.14 (0.03) and 1.76(0.03) respectively have been measured for 0.7um diameter anode devices by DC and RF measurements. The schottky barrier diodes fabrication process is fully planar and very suitable for integration in THz frequency multiplier and mixer circuits. THz Schottky barrier diodes based on such technology with 2 μm diameter anodes have been tested at 1.6 THz in a sub-harmonic mixer.

  13. Bulk GaN Schottky Diodes for Millimeter Wave Frequency Multipliers, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Within the context of this project, White Light Power Inc. (WLPI) will demonstrate prototype vertical GaN Schottky diodes for high-power rectification at W-band. To...

  14. Integration of organic based Schottky junctions for crossbar non-volatile memory applications

    DEFF Research Database (Denmark)

    Katsia, E.; Tallarida, G.; Ferrari, S.

    2008-01-01

    Small size Schottky junctions using two different synthesized organic semiconductors (oligophenylene-vinylenes) were integrated by standard UV lithography into crossbar arrays. The proposed integration scheme can be applied to a wide class of organics without affecting material properties. Current...

  15. Current Transport Properties of Monolayer Graphene/n-Si Schottky Diodes

    Science.gov (United States)

    Pathak, C. S.; Garg, Manjari; Singh, J. P.; Singh, R.

    2018-05-01

    The present work reports on the fabrication and the detailed macroscopic and nanoscale electrical characteristics of monolayer graphene/n-Si Schottky diodes. The temperature dependent electrical transport properties of monolayer graphene/n-Si Schottky diodes were investigated. Nanoscale electrical characterizations were carried out using Kelvin probe force microscopy and conducting atomic force microscopy. Most the values of ideality factor and barrier height are found to be in the range of 2.0–4.4 and 0.50–0.70 eV for monolayer graphene/n-Si nanoscale Schottky contacts. The tunneling of electrons is found to be responsible for the high value of ideality factor for nanoscale Schottky contacts.

  16. Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Vali, Indudhar Panduranga [Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Shetty, Pramoda Kumara, E-mail: pramod.shetty@manipal.edu [Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Mahesha, M.G. [Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Petwal, V.C.; Dwivedi, Jishnu [Raja Ramanna Centre for Advanced Technology, Department of Atomic Energy, Government of India, Indore 452012 (India); Choudhary, R.J. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India)

    2017-06-15

    Highlights: • Tuning of Schottky barrier height has been achieved by electron beam irradiation at different doses on n-Si wafer prior to the fabrication of Schottky contact. • The XPS analyses have shown irradiation induced defects and the formation of several localized chemical states in Si/SiOx interface that influences the Schottky barrier height. • High ideality factor indicates metal-insulator-semiconductor configuration of the Schottky diode and the inhomogeneous nature of the Schottky barrier height. • The modifications in I–V characteristics have been observed as a function of electron dose. This is caused due to changes in the Schottky diode parameters and different transport mechanisms. - Abstract: The effect of electron beam irradiation (EBI) on Al/n-Si Schottky diode has been studied by I–V characterization at room temperature. The behavior of the metal-semiconductor (MS) interface is analyzed by means of variations in the MS contact parameters such as, Schottky barrier height (Φ{sub B}), ideality factor (n) and series resistance (R{sub s}). These parameters were found to depend on the EBI dose having a fixed incident beam of energy 7.5 MeV. At different doses (500, 1000, 1500 kGy) of EBI, the Schottky contacts were prepared and extracted their contact parameters by applying thermionic emission and Cheung models. Remarkably, the tuning of Φ{sub B} was observed as a function of EBI dose. The improved n with increased Φ{sub B} is seen for all the EBI doses. As a consequence of which the thermionic emission is more favored. However, the competing transport mechanisms such as space charge limited emission, tunneling and tunneling through the trap states were ascribed due to n > 1. The analysis of XPS spectra have shown the presence of native oxide and increased radiation induced defect states. The thickness variation in the MS interface contributing to Schottky contact behavior is discussed. This study explains a new technique to tune

  17. Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode.

    Science.gov (United States)

    Hosseini Shokouh, Seyed Hossein; Raza, Syed Raza Ali; Lee, Hee Sung; Im, Seongil

    2014-08-21

    On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting oxide as top gate turned out to be very photosensitive, although ZnO NW SD was blind to visible light. Based on this, we could achieve an array of photo-inverter cells on one NW. Our non-classical inverter is regarded as quite practical for both logic and photo-sensing due to its performance as well as simple device configuration.

  18. Psychosurgery, ethics, and media: a history of Walter Freeman and the lobotomy.

    Science.gov (United States)

    Caruso, James P; Sheehan, Jason P

    2017-09-01

    At the peak of his career, Walter J. Freeman II was a celebrated physician and scientist. He served as the first chairman of the Department of Neurology at George Washington University and was a tireless advocate of surgical treatment for mental illness. His eccentric appearance, engaging personality during interviews, and theatrical demonstrations of his surgical techniques gained him substantial popularity with local and national media, and he performed more than 3000 prefrontal and transorbital lobotomies between 1930 and 1960. However, poor patient outcomes, unfavorable portrayals of the lobotomy in literature and film, and increased regulatory scrutiny contributed to the lobotomy's decline in popularity. The development of antipsychotic medications eventually relegated the lobotomy to rare circumstances, and Freeman's reputation deteriorated. Today, despite significant advancements in technique, oversight, and ethical scrutiny, neurosurgical treatment of mental illness still carries a degree of social stigma. This review presents a historical account of Walter Freeman's life and career, and the popularization of the lobotomy in the US. Additionally, the authors pay special attention to the influence of popular literature and film on the public's perception of psychosurgery. Aided by an understanding of this pivotal period in medical history, neurosurgeons are poised to confront the ethical and sociological questions facing psychosurgery as it continues to evolve.

  19. PROTAGONISMO DOS ÍNDIOS NORTE-AMERICANOS NOS DESENHOS ANIMADOS DE WALTER LANTZ

    Directory of Open Access Journals (Sweden)

    RAFAEL DUARTE OLIVEIRA VENANCIO

    2011-06-01

    Full Text Available Condemned to a dubious media representation in early cinema through thenovels of the late nineteenth century, the North American Indians never had a high profile infilms of this period. However, an animator, Walter Lantz, has a high degree of characterizationof Native Americans in his work. The aim of this paper is to study the role of Native Americansin these cartoons and analyze the social implications of these choices, using the concepts ofapparatus and formula. Furthermore, the analysis will include a portrayal of the Americanmedia scene before and after Lantz, seeking disruptions and legacies.Condenados a uma duvidosa representação midiática no início do cinema graçasaos romances do final do século XIX, os índios norte-americanos nunca tiveram um grandedestaque nos filmes dessa época. No entanto, um realizador de desenhos animados, WalterLantz, possui um alto grau de caracterização de nativos norte-americanos em seus trabalhos. Oobjetivo do presente artigo é estudar o protagonismo dos índios norte-americanos nessesdesenhos animados, e analisar as implicações sociais dessas escolhas através do uso dosconceitos de dispositivo e fórmula. Além disso, a análise incluirá a retratação da cenamidiática norte-americana antes e depois de Lantz, buscando rupturas e legados.

  20. Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

    NARCIS (Netherlands)

    Hajlasz, Marcin; Donkers, Johan J.T.M.; Pandey, Saurabh; Hurkx, Fred; Hueting, Raymond J.E.; Gravesteijn, Dirk J.

    2017-01-01

    In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-Technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress

  1. Simulation of a perfect CVD diamond Schottky diode steep forward current–voltage characteristic

    Energy Technology Data Exchange (ETDEWEB)

    Kukushkin, V.A., E-mail: vakuk@appl.sci-nnov.ru [Institute of Applied Physics of the Russian Academy of Science, 46 Ulyanov St., 603950 Nizhny Novgorod (Russian Federation); Nizhny Novgorod State University named after N.I. Lobachevsky, 23 Gagarin pr., 603950 Nizhny Novgorod (Russian Federation)

    2016-10-01

    The kinetic equation approach to the simulation of the perfect CVD diamond Schottky diode current–voltage characteristic is considered. In result it is shown that the latter has a significantly steeper forward branch than that of perfect devices of such a type on usual semiconductors. It means that CVD diamond-based Schottky diodes have an important potential advantage over analogous devices on conventional materials.

  2. Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

    OpenAIRE

    H. MAZARI; K. AMEUR; N. BENSEDDIK; Z. BENAMARA; R. KHELIFI; M. MOSTEFAOUI; N. ZOUGAGH; N. BENYAHYA; R. BECHAREF; G. BASSOU; B. GRUZZA; J. M. BLUET; C. BRU-CHEVALLIER

    2014-01-01

    The current-voltage (I-V) characteristics of Pt/(n.u.d)-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-recombination, tunneling and leakage currents caused by inhomogeneities and defects at metal-semicondu...

  3. Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

    Science.gov (United States)

    Javanainen, Arto; Galloway, Kenneth F.; Nicklaw, Christopher; Bosser, Alexandre L.; Ferlet-Cavrois, Veronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronald D.; Weller, Robert A.; hide

    2016-01-01

    Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.

  4. STS-55 MS1/PLC Ross and Payload Specialist Walter work in SL-D2 module

    Science.gov (United States)

    1993-01-01

    STS-55 Mission Specialist 1 (MS1) and Payload Commander (PLC) Jerry L. Ross floats near cycle ergometer and Rack 9 Anthrorack (AR) (Human Physiology Laboratory) as German Payload Specialist 1 Ulrich Walter reviews a checklist in front of Rack 11 Experiment Rack. These experiment stations and the crewmembers are in the shirt-sleeve environment of the Spacelab Deutsche 2 (SL-D2) science module onboard the Earth-orbiting Columbia, Orbiter Vehicle (OV) 102. In the background is the SL-D2 aft end cone. Behind Ross and Walter is Rack 12 Experiment Rack with Baroreflex (BA).

  5. Tuning the Schottky rectification in graphene-hexagonal boron nitride-molybdenum disulfide heterostructure.

    Science.gov (United States)

    Liu, Biao; Zhao, Yu-Qing; Yu, Zhuo-Liang; Wang, Lin-Zhi; Cai, Meng-Qiu

    2018-03-01

    It was still a great challenge to design high performance of rectification characteristic for the rectifier diode. Lately, a new approach was proposed experimentally to tune the Schottky barrier height (SBH) by inserting an ultrathin insulated tunneling layer to form metal-insulator-semiconductor (MIS) heterostructures. However, the electronic properties touching off the high performance of these heterostructures and the possibility of designing more efficient applications for the rectifier diode were not presently clear. In this paper, the structural, electronic and interfacial properties of the novel MIS diode with the graphene/hexagonal boron nitride/monolayer molybdenum disulfide (GBM) heterostructure had been investigated by first-principle calculations. The calculated results showed that the intrinsic properties of graphene and MoS 2 were preserved due to the weak van der Waals contact. The height of interfacial Schottky barrier can be tuned by the different thickness of hBN layers. In addition, the GBM Schottky diode showed more excellent rectification characteristic than that of GM Schottky diode due to the interfacial band bending caused by the epitaxial electric field. Based on the electronic band structure, we analyzed the relationship between the electronic structure and the nature of the Schottky rectifier, and revealed the potential of utilizing GBM Schottky diode for the higher rectification characteristic devices. Copyright © 2017 Elsevier Inc. All rights reserved.

  6. Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky junction.

    Science.gov (United States)

    Rajput, S; Chen, M X; Liu, Y; Li, Y Y; Weinert, M; Li, L

    2013-01-01

    When graphene is interfaced with a semiconductor, a Schottky contact forms with rectifying properties. Graphene, however, is also susceptible to the formation of ripples upon making contact with another material. Here we report intrinsic ripple- and electric field-induced effects at the graphene semiconductor Schottky junction, by comparing chemical vapour-deposited graphene transferred on semiconductor surfaces of opposite polarization-the hydrogen-terminated silicon and carbon faces of hexagonal silicon carbide. Using scanning tunnelling microscopy/spectroscopy and first-principles calculations, we show the formation of a narrow Schottky dipole barrier approximately 10 Å wide, which facilitates the observed effective electric field control of the Schottky barrier height. We further find atomic-scale spatial fluctuations in the Schottky barrier that directly follow the undulation of ripples on both graphene-silicon carbide junctions. These findings reveal fundamental properties of the graphene/semiconductor Schottky junction-a key component of vertical graphene devices that offer functionalities unattainable in planar device architecture.

  7. Electrical transport measurements and degradation of graphene/n-Si Schottky junction diodes

    International Nuclear Information System (INIS)

    Park, No-Won; Lee, Won-Yong; Lee, Sang-Kwon; Koh, Jung-Hyuk; Kim, Dong-Joo; Kim, Gil-Sung; Hyung, Jung-Hwan; Hong, Chang-Hee; Kim, Keun-Soo

    2015-01-01

    We report on the electrical properties, such as the ideality factors and Schottky barrier heights, that were obtained by using current density - voltage (J - V ) and capacitance - voltage (C - V ) characteristics. To fabricate circularly- and locally-contacted Au/Gr/n-Si Schottky diode, we deposited graphene through the chemical vapor deposition (CVD) growth technique, and we employed reactive ion etching to reduce the leakage current of the Schottky diodes. The average values of the barrier heights and the ideality factors from the J .V characteristics were determined to be ∼0.79 ± 0.01 eV and ∼1.80 ± 0.01, respectively. The Schottky barrier height and the doping concentration from the C - V measurements were ∼0.85 eV and ∼1.76 x 10 15 cm -3 , respectively. From the J - V characteristics, we obtained a relatively low reverse leakage current of ∼2.56 x 10 -6 mA/cm -2 at -2 V, which implies a well-defined rectifying behavior. Finally, we found that the Gr/n-Si Schottky diodes that were exposed to ambient conditions for 7 days exhibited a ∼3.2-fold higher sheet resistance compared with the as-fabricated Gr/n-Si diodes, implying a considerable electrical degradation of the Gr/n-Si Schottky diodes.

  8. Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

    International Nuclear Information System (INIS)

    Feng-Ping, Chen; Yu-Ming, Zhang; Hong-Liang, Lü; Yi-Men, Zhang; Jian-Hua, Huang

    2010-01-01

    This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  9. Tuning the Schottky contacts in the phosphorene and graphene heterostructure by applying strain.

    Science.gov (United States)

    Liu, Biao; Wu, Li-Juan; Zhao, Yu-Qing; Wang, Lin-Zhi; Caii, Meng-Qiu

    2016-07-20

    The structures and electronic properties of the phosphorene and graphene heterostructure are investigated by density functional calculations using the hybrid Heyd-Scuseria-Ernzerhof (HSE) functional. The results show that the intrinsic properties of phosphorene and graphene are preserved due to the weak van der Waals contact. But the electronic properties of the Schottky contacts in the phosphorene and graphene heterostructure can be tuned from p-type to n-type by the in-plane compressive strains from -2% to -4%. After analyzing the total band structure and density of states of P atom orbitals, we find that the Schottky barrier height (SBH) is determined by the P-pz orbitals. What is more, the variation of the work function of the phosphorene monolayer and the graphene electrode and the Fermi level shift are the nature of the transition of Schottky barrier from n-type Schottky contact to p-type Schottky contact in the phosphorene and graphene heterostructure under different in-plane strains. We speculate that these are general results of tuning of the electronic properties of the Schottky contacts in the phosphorene and graphene heterostructure by controlling the in-plane compressive strains to obtain a promising method to design and fabricate a phosphorene-graphene based field effect transistor.

  10. Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016

    Science.gov (United States)

    2016-12-01

    ARL-TR-7913 ● DEC 2016 US Army Research Laboratory Fabrication and Characterization of Vertical Gallium Nitride Power Schottky...TR-7913 ● DEC 2016 US Army Research Laboratory Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk...Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016 5a. CONTRACT NUMBER 5b. GRANT NUMBER

  11. New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure

    Science.gov (United States)

    Ha, Min-Woo; Lee, Seung-Chul; Choi, Young-Hwan; Kim, Soo-Seong; Yun, Chong-Man; Han, Min-Koo

    2006-10-01

    A new GaN Schottky barrier diode employing a trench structure, which is proposed and fabricated, successfully decreases a forward voltage drop without sacrificing any other electric characteristics. The trench is located in the middle of Schottky contact during a mesa etch. The Schottky metal of Pt/Mo/Ti/Au is e-gun evaporated on the 300 nm-deep trench as well as the surface of the proposed GaN Schottky barrier diode. The trench forms the vertical Au Schottky contact and lateral Pt Schottky contact due to the evaporation sequence of Schottky metal. The forward voltage drops of the proposed diode and conventional one are 0.73 V and 1.25 V respectively because the metal work function (5.15 eV) of the vertical Au Schottky contact is considerably less than that of the lateral Pt Schottky contact (5.65 eV). The proposed diode exhibits the low on-resistance of 1.58 mΩ cm 2 while the conventional one exhibits 8.20 mΩ cm 2 due to the decrease of a forward voltage drop.

  12. Richard J. Hill, Picturing Scotland through the Waverley Novels: Walter Scott and the Origins of the Victorian Illustrated Novel.

    Directory of Open Access Journals (Sweden)

    Jacqueline Irene Cannata

    2012-10-01

    Full Text Available Richard J. Hill, Picturing Scotland through the Waverley Novels: Walter Scott and the Origins of the Victorian Illustrated Novel . Farnham, Surrey, and Burlington, VT: Ashgate, 2010. Pp. 236. ISBN 978-0-7546-6806-0. US$99.99.

  13. A poética da tradução em Walter Benjamin e Haroldo de Campos

    Directory of Open Access Journals (Sweden)

    Luciene Guimarães de Oliveira

    2005-04-01

    Full Text Available Este ensaio visa traçar um paralelo entre a poética da tradução de Walter Benjamin, em “A Tarefa do Tradutor”, e a de Haroldo de Campos, poeta, tradutor, e crítico brasileiro em sua teoria da tradução.

  14. "Walter Gropius" by Dean Carter. Exhibition of College of Architecture and Urban Studies Timeline and Portrait Busts.

    OpenAIRE

    Carter, Dean

    2014-01-01

    DEAN CARTER. Walter Gropius. Cast bronze. The Art Collection / Virginia Tech Foundation Exhibition of portrait busts and the timeline of the history College of Architecture and Urban Studies, on the occasion of the 50th anniversary of the College. Curated by Truman Capone and Deb Sim. Francis T. Eck Exhibition Corridor, Moss Arts Center, Virginia Tech. Image 13

  15. Internal Quality Assurance Reviews: Challenges and Processes--Walter Sisulu University's Business, Management Sciences and Law Faculty

    Science.gov (United States)

    Moodly, A.; Saunderson, I.

    2008-01-01

    The Council for Higher Educations' (CHE) Higher Education Quality Committee (HEQC) requires internal quality evaluations to be performed on the various programmes offered by the Faculty before visitation by the HEQC. This article examines some of the challenges and processes followed by six of the departments of Walter Sisulu University's Faculty…

  16. Memória e história: Hannah Arendt em diálogo com Walter Benjamin

    Directory of Open Access Journals (Sweden)

    Magalhães, Marionilde Brepohl de

    2006-01-01

    Full Text Available A autora tem como proposta refletir sobre o papel da memória e da História em nossa cultura contemporânea, através de uma aproximação ao pensamento de Hannah Arendt e Walter Benjamin

  17. Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications.

    Science.gov (United States)

    Rahmani, Meisam; Ahmadi, Mohammad Taghi; Abadi, Hediyeh Karimi Feiz; Saeidmanesh, Mehdi; Akbari, Elnaz; Ismail, Razali

    2013-01-30

    Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective mass, graphene nanoribbon length, gate insulator thickness, and electrical parameters such as Schottky barrier height and applied bias voltage. In this paper, the scaling behaviors of a Schottky-barrier FET using trilayer graphene nanoribbon are studied and analytically modeled. A novel analytical method is also presented for describing a switch in a Schottky-contact double-gate trilayer graphene nanoribbon FET. In the proposed model, different stacking arrangements of trilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a Schottky transistor. Based on this assumption, an analytical model and numerical solution of the junction current-voltage are presented in which the applied bias voltage and channel length dependence characteristics are highlighted. The model is then compared with other types of transistors. The developed model can assist in comprehending experiments involving graphene nanoribbon Schottky-barrier FETs. It is demonstrated that the proposed structure exhibits negligible short-channel effects, an improved on-current, realistic threshold voltage, and opposite subthreshold slope and meets the International Technology Roadmap for Semiconductors near-term guidelines. Finally, the results showed that there is a fast transient between on-off states. In other words, the suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption.

  18. L´autobiografia e il desiderio: sulla trilogia di Walter Siti

    Directory of Open Access Journals (Sweden)

    Alberto Casadei

    2008-04-01

    Full Text Available Neste ensaio é examinada toda a produção do escritor e crítico Walter Siti. A análise é desenvolvida segundo dois eixos fundamentais de um lado a relação com a forma da autobiografia, que se torna aqui explicitamente "falsificada", pondo em discussão a relação entre ficção/não ficção; de outro a relação com a tradição literária, especialmente com o modelo dantesco, decisivo para uma leitura "alegórica" dos vários contos.

  19. Seasonal variation in secondary metabolites of edible shoots of Buck's beard [Aruncus dioicus (Walter) Fernald (Rosaceae)].

    Science.gov (United States)

    Fusani, Pietro; Piwowarski, Jakub P; Zidorn, Christian; Kiss, Anna K; Scartezzini, Fabrizio; Granica, Sebastian

    2016-07-01

    Aruncus dioicus (Walter) Fernald is an herbaceous plant belonging to the Rosaceae family. In the northern regions of Italy young shoots of A. dioicus are collected and used as vegetable. No studies on the chemical composition of young shoots of A. dioicus have been reported so far. Thus, the aim of the present paper was to develop and validate a comprehensive chromatographic method allowing the identification and quantification of chemical compounds occurring in A. dioicus shoots harvested at different developmental stages. The results showed that shoots contain mainly polyphenols. Twenty-four compounds were detected. Caffeoylglucose derivatives were recognized as major compounds. It was also confirmed that shoots contain the cyanogenic compound prunasin at all investigated vegetation stages. It was shown that the prunasin content significantly increases during plant development, thus justifying the belief that after the development of the first green leaves, shoots should not be used for culinary purposes any longer. Copyright © 2016 Elsevier Ltd. All rights reserved.

  20. W. Grey Walter, pioneer in the electroencephalogram, robotics, cybernetics, artificial intelligence.

    Science.gov (United States)

    Bladin, Peter F

    2006-02-01

    With the announcement by William Lennox at the 1935 London International Neurology Congress of the use of electroencephalography in the study of epilepsy, it became evident that a new and powerful technique for the investigation of seizures had been discovered. William Grey Walter, a young researcher finishing his post-graduate studies at Cambridge, was selected to construct and study the EEG in clinical neurology at the Maudsley Hospital, London. His hugely productive pioneering career in the use of EEG would eventually lead to groundbreaking work in other fields --the emerging sciences of robotics, cybernetics, and early work in artificial intelligence. In this historical note his pioneering work in the fields of clinical neurophysiology is documented, both in the areas of epileptology and tumour detection. His landmark contributions to clinical neurophysiology are worthy of documentation.

  1. Walter Miles, Pop Warner, B. C. Graves, and the psychology of football.

    Science.gov (United States)

    Baugh, Frank G; Benjamin, Ludy T

    2006-01-01

    In 1926-1927, a graduate student, B. C. Graves, working with Stanford University psychologist Walter Miles and legendary football coach Pop Warner, conducted an investigation of variations in signal calling as they affected the charging times of football players. The study was one of two that involved Miles and the ingenious multiple chronograph that he had invented to time the reactions of seven players simultaneously. These studies represented a brief digression in the career of Miles, who certainly was no sport psychologist. They tell of an interesting collaboration between scientist and coaches that produced one of the richest studies in sport psychology in the first half of the twentieth century. Copyright 2006 Wiley Periodicals, Inc.

  2. A TEMÁTICA DA INFÂNCIA SOB A VISÃO DE WALTER BENJAMIN

    Directory of Open Access Journals (Sweden)

    Aparecida Maria Sales de SOUZA

    2011-01-01

    Full Text Available Este texto tem como objetivo analisar as reflexões de Walter Benjamin relacionadas à temática da infância e demonstrar que as considerações do filósofo são relevantes para a sociedade contemporânea. Benjamin critica a pedagogia, dá ênfase à valorização da criança e vê o brincar como experiência formadora da infância plena e do adulto realizado. Através das proposições de Benjamin, pode-se ter outra visão sobre a experiência educacional da criança. A pesquisa é teórica confirmando o pensamento de Benjamin com outros autores em relação à criança, o brincar e à educação.

  3. Conference on Inequalities and Applications : Dedicated to the Memory of Wolfgang Walter

    CERN Document Server

    Gilányi, Attila; Losonczi, László; Plum, Michael

    2012-01-01

    Inequalities arise as an essential component in various mathematical areas. Besides forming a highly important collection of tools, e.g. for proving analytic or stochastic theorems or for deriving error estimates in numerical mathematics, they constitute a challenging research field of their own. Inequalities also appear directly in mathematical models for applications in science, engineering, and economics. This edited volume covers divers aspects of this fascinating field. It addresses classical inequalities related to means or to convexity as well as inequalities arising in the field of ordinary and partial differential equations, like Sobolev or Hardy-type inequalities, and inequalities occurring in geometrical contexts. Within the last five decades, the late Wolfgang Walter has made great contributions to the field of inequalities. His book on differential and integral inequalities was a real breakthrough in the 1970’s and has generated a vast variety of further research in this field. He also organize...

  4. Stephen Hall Receives 2012 Walter Sullivan Award for Excellence in Science Journalism-Features: Citation

    Science.gov (United States)

    Pearson, Helen

    2013-01-01

    Stephen Hall, a freelance science writer and science-communication teacher, received the Walter Sullivan Award for Excellence in Science Journalism-Features at the AGU Fall Meeting Honors Ceremony, held on 5 December 2012 in San Francisco, Calif. Hall was honored for the article "At Fault?" published 15 September 2011 in Nature. The article examines the legal, personal, and political repercussions from a 2009 earthquake in L'Aquila, Italy for seismologists who had attempted to convey seismic risk assessments to the public. The 6.3 magnitude quake devastated the medieval town and caused more than 300 deaths. Six scientists and one government official were subsequently convicted of manslaughter and sentenced to prison for inadequately assessing and mischaracterizing the risks to city residents, despite the inexact nature of seismic risk assessment. The Sullivan award is for work published with a deadline pressure of more than 1 week.

  5. Rayleigh-Taylor instability of two superposed conducting Walters B' elastico-viscous fluids in hydromagnetics

    International Nuclear Information System (INIS)

    Sharma, R.C.; Kumar, Pardeep

    1998-01-01

    The Rayleigh-Taylor instability of two superposed electrically conducting Walters elastico-viscous fluids (Model B') of uniform densities when the whole system is immersed in a uniform horizontal magnetic field has been studied. The stability analysis has been carried out, for mathematical simplicity, for two highly viscoelastic fluids of equal kinematic viscosities and equal kinematic viscoelasticities. For the stable configuration as in hydrodynamic case, the system is found to be stable or unstable for the wave-number range k (2v') -12 depending on kinematic viscoelasticity v'. For the unstable configuration, the magnetic field has got stabilizing effect and completely stabilizes certain wave-number range which was always unstable in the absence of magnetic field. The behaviour of growth rates with respect kinematic viscosity and kinematic viscoelasticity parameters are examined analytically. (author)

  6. Universos ficcionais: o romanesco em Walter Scott e José de Alencar

    Directory of Open Access Journals (Sweden)

    Marcos Roberto Flamínio Peres

    2016-10-01

    Full Text Available Tamanha é a força do romanesco em Walter Scott que ele foi capaz de dar origem a duas linhas de força críticas antagônicas: uma tendendo a situá-lo dentro do conjunto da literatura ocidental, reatualizando arquétipos ancestrais (Frye; outra considerando-o a quintessência do romance histórico por representar momentos cruciais por que passava a sociedade capitalista entre os séculos XVIII e XIX (Lukács. À luz desse pano de fundo teórico contrastivo, este artigo busca analisar Waverley (1814, obra mais influente de Scott, em comparação com As minas de prata (1865-1866, romance mais ambicioso de José de Alencar e que lança mão de estratégias narrativas similares.

  7. Furio Jesi’s mythological machine and the quote to Walter Benjamin

    Directory of Open Access Journals (Sweden)

    Mercedes Ruvitoso

    2014-12-01

    Full Text Available In his cognitive model called “mithological machine”, Furio Jesi proposes to circumscribe the concept of “myth” by means of a technique of critical composition of data and doctrines about the myth and the mythology. The model not only seeks to brave scientific-methodological reasons but also ethical-political ones. It’s about avoiding all the evocation and instrumentalization of myth in view of a political interest. This work analyzes the way as the model of Jesi resumes and develops two motives of Walter Benjamin’s work: (1 the one known as method of the quote without quotation marks and (2 the criticism of the reactionary theories of myth, specifically regarding the rehabilita­tion of Bachofen in the German culture from 1920’s and 1930’s.

  8. Thermionic field emission in gold nitride Schottky nanodiodes

    Science.gov (United States)

    Spyropoulos-Antonakakis, N.; Sarantopoulou, E.; Kollia, Z.; Samardžija, Z.; Kobe, S.; Cefalas, A. C.

    2012-11-01

    We report on the thermionic field emission and charge transport properties of gold nitride nanodomains grown by pulsed laser deposition with a molecular fluorine laser at 157 nm. The nanodomains are sandwiched between the metallic tip of a conductive atomic force microscope and a thin gold layer forming thus a metal-semiconductor-metal junction. Although the limited existing data in the literature indicate that gold nitride was synthesized previously with low efficiency, poor stability, and metallic character; in this work, it is shown that gold nitride nanodomains exhibit semiconducting behavior and the metal-semiconductor-metal contact can be modeled with the back-to-back Schottky barrier model. From the experimental I-V curves, the main charge carrier transport process is found to be thermionic field emission via electron tunneling. The rectifying, near symmetric and asymmetric current response of nanocontacts is related to the effective contact area of the gold nitride nanodomains with the metals. A lower limit for the majority charge carriers concentration at the boundaries of nanodomains is also established using the full depletion approximation, as nanodomains with thickness as low as 6 nm were found to be conductive. Current rectification and charge memory effects are also observed in "quite small" conductive nanodomains (6-10 nm) due to stored charges. Indeed, charges near the surface are identified as inversion domains in the phase shift mapping performed with electrostatic force microscopy and are attributed to charge trapping at the boundaries of the nanodomains.

  9. Carrier velocity effect on carbon nanotube Schottky contact

    Energy Technology Data Exchange (ETDEWEB)

    Fathi, Amir, E-mail: fathi.amir@hotmail.com [Urmia University, Department of Electrical Engineering, Microelectronic Research Laboratory (Iran, Islamic Republic of); Ahmadi, M. T., E-mail: mt.ahmadi@urmia.ac.ir; Ismail, Razali, E-mail: Razali@fke.utm.my [University Technology Malaysia, Department of Electronic Engineering (Malaysia)

    2016-08-15

    One of the most important drawbacks which caused the silicon based technologies to their technical limitations is the instability of their products at nano-level. On the other side, carbon based materials such as carbon nanotube (CNT) as alternative materials have been involved in scientific efforts. Some of the important advantages of CNTs over silicon components are high mechanical strength, high sensing capability and large surface-to-volume ratio. In this article, the model of CNT Schottky transistor current which is under exterior applied voltage is employed. This model shows that its current has a weak dependence on thermal velocity corresponding to the small applied voltage. The conditions are quite different for high bias voltages which are independent of temperature. Our results indicate that the current is increased by Fermi velocity, but the I–V curves will not have considerable changes with the variations in number of carriers. It means that the current doesn’t increase sharply by voltage variations over different number of carriers.

  10. Cooling of radioactive isotopes for Schottky mass spectrometry

    International Nuclear Information System (INIS)

    Steck, M.; Beckert, K.; Eickhoff, H.; Franzke, B.; Nolden, F.; Reich, H.; Schlitt, B.; Winkler, T.

    1999-01-01

    Nuclear masses of radioactive isotopes can be determined by measurement of their revolution frequency relative to the revolution frequency of reference ions with well-known masses. The resolution of neighboring frequency lines and the accuracy of the mass measurement is dependent on the achievable minimum longitudinal momentum spread of the ion beam. Electron cooling allows an increase of the phase space density by several orders of magnitude. For high intensity beams Coulomb scattering in the dense ion beam limits the beam quality. For low intensity beams a regime exists in which the diffusion due to intrabeam scattering is not dominating any more. The minimum momentum spread δp/p=5x10 -7 which is observed by Schottky noise analysis is considerably higher than the value expected from the longitudinal electron temperature. The measured frequency spread results from fluctuations of the magnetic field in the storage ring magnets. Systematic mass measurements have started and can be presently used for ions with half-lives of some ten seconds. For shorter-lived nuclei a stochastic precooling system is in preparation

  11. Schottky-contact plasmonic dipole rectenna concept for biosensing.

    Science.gov (United States)

    Alavirad, Mohammad; Mousavi, Saba Siadat; Roy, Langis; Berini, Pierre

    2013-02-25

    Nanoantennas are key optical components for several applications including photodetection and biosensing. Here we present an array of metal nano-dipoles supporting surface plasmon polaritons (SPPs) integrated into a silicon-based Schottky-contact photodetector. Incident photons coupled to the array excite SPPs on the Au nanowires of the antennas which decay by creating "hot" carriers in the metal. The hot carriers may then be injected over the potential barrier at the Au-Si interface resulting in a photocurrent. High responsivities of 100 mA/W and practical minimum detectable powers of -12 dBm should be achievable in the infra-red (1310 nm). The device was then investigated for use as a biosensor by computing its bulk and surface sensitivities. Sensitivities of ∼ 250 nm/RIU (bulk) and ∼ 8 nm/nm (surface) in water are predicted. We identify the mode propagating and resonating along the nanowires of the antennas, we apply a transmission line model to describe the performance of the antennas, and we extract two useful formulas to predict their bulk and surface sensitivities. We prove that the sensitivities of dipoles are much greater than those of similar monopoles and we show that this difference comes from the gap in dipole antennas where electric fields are strongly enhanced.

  12. Alternative current source based Schottky contact with additional electric field

    Science.gov (United States)

    Mamedov, R. K.; Aslanova, A. R.

    2017-07-01

    Additional electric field (AEF) in the Schottky contacts (SC) that covered the peripheral contact region wide and the complete contact region narrow (as TMBS diode) SC. Under the influence of AEF is a redistribution of free electrons produced at certain temperatures of the semiconductor, and is formed the space charge region (SCR). As a result of the superposition of the electric fields SCR and AEF occurs the resulting electric field (REF). The REF is distributed along a straight line perpendicular to the contact surface, so that its intensity (and potential) has a minimum value on the metal surface and the maximum value at a great distance from the metal surface deep into the SCR. Under the influence of AEF as a sided force the metal becomes negative pole and semiconductor - positive pole, therefore, SC with AEF becomes an alternative current source (ACS). The Ni-nSi SC with different diameters (20-1000 μm) under the influence of the AEF as sided force have become ACS with electromotive force in the order of 0.1-1.0 mV, which are generated the electric current in the range of 10-9-10-7 A, flowing through the external resistance 1000 Ohm.

  13. Walter Reed Army Medical Center's Internet-based electronic health portal.

    Science.gov (United States)

    Abbott, Kevin C; Boocks, Carl E; Sun, Zhengyi; Boal, Thomas R; Poropatich, Ronald K

    2003-12-01

    Use of the World Wide Web (WWW) and electronic media to facilitate medical care has been the subject of many reports in the popular press. However, few reports have documented the results of implementing electronic health portals for essential medical tasks, such as prescription refills and appointments. At Walter Reed Army Medical Center, "Search & Learn" medical information, Internet-based prescription refills and patient appointments were established in January 2001. A multiphase retrospective analysis was conducted to determine the use of the "Search & Learn" medical information and the relative number of prescription refills and appointments conducted via the WWW compared with conventional methods. From January 2001 to May 2002, there were 34,741 refills and 819 appointments made over the Internet compared with 2,275,112 refills and approximately 500,000 appointments made conventionally. WWW activity accounted for 1.52% of refills and 0.16% of appointments. There was a steady increase in this percentage over the time of the analysis. In April of 2002, the monthly average of online refills had risen to 4.57% and online appointments were at 0.27%. Online refills were projected to account for 10% of all prescriptions in 2 years. The "Search & Learn" medical information portion of our web site received 147,429 unique visits during this same time frame, which was an average of 326 visitors per day. WWW-based methods of conducting essential medical tasks accounted for a small but rapidly increasing percentage of total activity at Walter Reed Army Medical Center. Subsequent phases of analysis will assess demographic and geographic factors and aid in the design of future systems to increase use of the Internet-based systems.

  14. Conduction mechanism in electron beam irradiated Al/n-Si Schottky diode

    International Nuclear Information System (INIS)

    Vali, Indudhar Panduranga; Shetty, Pramoda Kumara; Mahesha, M.G.; Petwal, V.C.

    2016-01-01

    In the high energy physics experiments, silicon based diodes are used to fabricate radiation detector to detect the charged particles. The Schottky barrier diodes have been studied extensively to understand the behavior of metal semiconductor interface, since such interfaces have been utilized as typical contacts in silicon devices. Because of surface states, interfacial layer, microscopic clusters of metal-semiconductor phases and other effects, it is difficult to fabricate junctions with barriers near the ideal values predicted from the work functions of the two isolated materials, therefore measured barrier heights are used in the device design. In this work, the Al/n-Si Schottky contacts are employed to study the diode parameters (Schottky barrier height and ideality factor), where the Schottky contacts were fabricated on electron beam irradiated silicon wafers. The interface behavior between electron irradiated Si wafer and post metal deposition is so far not reported. This method could be an alternative way to tailor the Schottky barrier height (SBH) without subjecting semiconductor sample to pre chemical and/or post heat treatments during fabrication

  15. Research on the electrical characteristics of the Pt/CdS Schottky diode

    Science.gov (United States)

    Ding, Jia-xin; Zhang, Xiang-feng; Yao, Guansheng

    2013-08-01

    With the development of technology, the demand for semiconductor ultraviolet detector is increasing day by day. Compared with the traditional infrared detector in missile guidance, ultraviolet/infrared dual-color detection can significantly improve the anti-interference ability of the missile. According to the need of missile guidance and other areas of the application of ultraviolet detector, the paper introduces a manufacture of the CdS Schottky barrier ultraviolet detector. By using the radio frequency magnetron sputtering technology, a Pt thin film layer is sputtered on CdS basement to form a Schottky contact firstly. Then the indium ohmic contact electrode is fabricated by thermal evaporation method, and eventually a Pt/CdS/In Schottky diode is formed. The I-V characteristic of the device was tested at room temperature, its zero bias current and open circuit voltage is -0.578nA and 130mV, respectively. Test results show that the the Schottky contact has been formed between Pt and CdS. The device has good rectifying characteristics. According to the thermionic emission theory, the I-V curve fitting analysis of the device was studied under the condition of small voltage. The ideality factor and Schottky barrier height is 1.89 and 0.61eV, respectively. The normalized spectral responsivity at zero bias has been tested. The device has peak responsivity at 500nm, and it cutoff at 510nm.

  16. Transverse Schottky spectra and beam transfer functions of coasting ion beams with space charge

    International Nuclear Information System (INIS)

    Paret, Stefan

    2010-01-01

    A study of the transverse dynamics of coasting ion beams with moderate space charge is presented in this work. From the dispersion relation with linear space charge, an analytic model describing the impact of space charge on transverse beam transfer functions (BTFs) and the stability limits of a beam is derived. The dielectric function obtained in this way is employed to describe the transverse Schottky spectra with linear space charge as well. The difference between the action of space charge and impedances is highlighted. The setup and the results of an experiment performed in the heavy ion synchrotron SIS-18 at GSI to detect space-charge effects at different beam intensities are explicated. The measured transverse Schottky spectra and BTFs are compared with the linear space-charge model. The stability diagrams constructed from the BTFs are presented. The space-charge parameters evaluated from the Schottky and BTF measurements are compared with estimations based on measured beam parameters. The impact of collective effects on the Schottky and BTF diagnostics is also investigated through numerical simulations. For this purpose the self-field of beams with linear and non-linear transverse density-distributions is computed on a twodimensional grid. The noise of the random particle distribution causes fluctuations of the dipole moment of the beam which produce the Schottky spectrum. BTFs are simulated by exciting the beam with transverse kicks. The simulation results are used to verify the space-charge model. (orig.)

  17. Longitudinal schottky spectra of a bunched Ne10+ ion beam at the CSRe

    International Nuclear Information System (INIS)

    Wen Weiqiang; Ma Xinwen; Zhang Dacheng

    2013-01-01

    The longitudinal Schottky spectra of a radio-frequency (RF) bunched and electron cooled 22Ne 10+ ion beam at 70 MeV/u have been studied by a newly installed resonant Schottky pick-up at the experimental cooler storage ring (CSRe), at IMP. For an RF-bunched ion beam, a longitudinal momentum spread of Δp/p=1.6 × 10 -5 has been reached with less than 107 stored ions. The reduction of momentum spread compared with a coasting ion beam was observed from Schottky noise signal of the bunched ion beam. In order to prepare the future laser cooling experiment at the CSRe, the RF-bunching power was modulated at 25 th , 50 th and 75 th harmonic of the revolution frequency, effective bunching amplitudes were extracted from the Schottky spectrum analysis. Applications of Schottky noise for measuring beam lifetime with ultra-low intensity of ion beams are presented, and it is relevant to upcoming experiments on laser cooling of relativistic heavy ion beams and nuclear physics at the CSRe. (authors)

  18. Schottky junction photovoltaic devices based on CdS single nanobelts.

    Science.gov (United States)

    Ye, Y; Dai, L; Wu, P C; Liu, C; Sun, T; Ma, R M; Qin, G G

    2009-09-16

    Schottky junction photovoltaic (PV) devices were fabricated on single CdS nanobelts (NBs). Au was used as the Schottky contact, and In/Au was used as the ohmic contact to CdS NB. Typically, the Schottky junction exhibits a well-defined rectifying behavior in the dark with a rectification ratio greater than 10(3) at +/- 0.3 V; and the PV device exhibits a clear PV behavior with an open circuit photovoltage of about 0.16 V, a short circuit current of about 23.8 pA, a maximum output power of about 1.6 pW, and a fill factor of 42%. Moreover, the output power can be multiplied by connecting two or more of the Schottky junction PV devices, made on a single CdS NB, in parallel or in series. This study demonstrates that the 1D Schottky junction PV devices, which have the merits of low cost, easy fabrication and material universality, can be an important candidate for power sources in nano-optoelectronic systems.

  19. Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.

    Science.gov (United States)

    Penumatcha, Ashish V; Salazar, Ramon B; Appenzeller, Joerg

    2015-11-13

    Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

  20. Design and simulation of GaN based Schottky betavoltaic nuclear micro-battery

    International Nuclear Information System (INIS)

    San, Haisheng; Yao, Shulin; Wang, Xiang; Cheng, Zaijun; Chen, Xuyuan

    2013-01-01

    The current paper presents a theoretical analysis of Ni-63 nuclear micro-battery based on a wide-band gap semiconductor GaN thin-film covered with thin Ni/Au films to form Schottky barrier for carrier separation. The total energy deposition in GaN was calculated using Monte Carlo methods by taking into account the full beta spectral energy, which provided an optimal design on Schottky barrier width. The calculated results show that an 8 μm thick Schottky barrier can collect about 95% of the incident beta particle energy. Considering the actual limitations of current GaN growth technique, a Fe-doped compensation technique by MOCVD method can be used to realize the n-type GaN with a carrier concentration of 1×10 15 cm −3 , by which a GaN based Schottky betavoltaic micro-battery can achieve an energy conversion efficiency of 2.25% based on the theoretical calculations of semiconductor device physics. - Highlights: • Ni-63 is employed as the pure beta radioisotope source. • The Schottky junction betavoltaic battery is based on the wide-band gap semiconductor GaN. • The total energy deposition of incident beta particles in GaN was simulated by the Monte Carlo method. • A Fe-doped compensation technique is suggested to increase the energy conversion efficiency

  1. Investigation of significantly high barrier height in Cu/GaN Schottky diode

    Directory of Open Access Journals (Sweden)

    Manjari Garg

    2016-01-01

    Full Text Available Current-voltage (I-V measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu Schottky diodes fabricated on Gallium Nitride (GaN epitaxial films. An ideality factor of 1.7 was found at room temperature (RT, which indicated deviation from thermionic emission (TE mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS was used to investigate the plausible reason for observing Schottky barrier height (SBH that is significantly higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu2O layer at the interface between Cu and GaN. With Cu2O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu2O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.

  2. Transverse Schottky spectra and beam transfer functions of coasting ion beams with space charge

    Energy Technology Data Exchange (ETDEWEB)

    Paret, Stefan

    2010-02-22

    A study of the transverse dynamics of coasting ion beams with moderate space charge is presented in this work. From the dispersion relation with linear space charge, an analytic model describing the impact of space charge on transverse beam transfer functions (BTFs) and the stability limits of a beam is derived. The dielectric function obtained in this way is employed to describe the transverse Schottky spectra with linear space charge as well. The difference between the action of space charge and impedances is highlighted. The setup and the results of an experiment performed in the heavy ion synchrotron SIS-18 at GSI to detect space-charge effects at different beam intensities are explicated. The measured transverse Schottky spectra and BTFs are compared with the linear space-charge model. The stability diagrams constructed from the BTFs are presented. The space-charge parameters evaluated from the Schottky and BTF measurements are compared with estimations based on measured beam parameters. The impact of collective effects on the Schottky and BTF diagnostics is also investigated through numerical simulations. For this purpose the self-field of beams with linear and non-linear transverse density-distributions is computed on a twodimensional grid. The noise of the random particle distribution causes fluctuations of the dipole moment of the beam which produce the Schottky spectrum. BTFs are simulated by exciting the beam with transverse kicks. The simulation results are used to verify the space-charge model. (orig.)

  3. Diabetes Care and Treatment Project: A Diabetes Institute of the Walter Reed Health Care System and Joslin Telemedicine Initiative

    Science.gov (United States)

    2009-04-09

    detecting proliferative diabetic retinopathy . Telemedicine and e-Health. 2005;11: 641-651. MILESTONES AND DELIVERABLES: Completion of data...telemedicine system for comprehensive diabetes management and assessment of diabetic retinopathy that provides increased access for diabetic patients to...CDMP developed under this collaborative effort. 15. SUBJECT TERMS Joslin Vision Network, telemedicine, diabetes mellitus, diabetic retinopathy

  4. Diabetes Care and Treatment Project: A Diabetes Institute of Walter Reed Health Care System and Joslin Telemedicine Initiative

    Science.gov (United States)

    2008-09-01

    teleophthalmology system as used by three federal healthcare agencies for detecting proliferative diabetic retinopathy . Telemedicine and e-Health. 2005;11: 641-651...a telemedicine system for comprehensive diabetes management andassessment of diabetic retinopathy that provides increased access for diabetic ...CDMP developed under this collaborative effort. 15. SUBJECT TERMS Joslin Vision Network, telemedicine, diabetes mellitus, diabetic retinopathy

  5. A strained silicon cold electron bolometer using Schottky contacts

    Energy Technology Data Exchange (ETDEWEB)

    Brien, T. L. R., E-mail: tom.brien@astro.cf.ac.uk; Ade, P. A. R.; Barry, P. S.; Dunscombe, C.; Morozov, D. V.; Sudiwala, R. V. [School of Physics and Astronomy, Cardiff University, Queen' s Buildings, The Parade, Cardiff CF24 3AA (United Kingdom); Leadley, D. R.; Myronov, M.; Parker, E. H. C.; Prest, M. J.; Whall, T. E. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Prunnila, M. [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044 VTT Espoo (Finland); Mauskopf, P. D. [School of Physics and Astronomy, Cardiff University, Queen' s Buildings, The Parade, Cardiff CF24 3AA (United Kingdom); Department of Physics and School of Earth and Space Exploration, Arizona State University, 650 E. Tyler Mall, Tempe, Arizona 85287 (United States)

    2014-07-28

    We describe optical characterisation of a strained silicon cold electron bolometer (CEB), operating on a 350 mK stage, designed for absorption of millimetre-wave radiation. The silicon cold electron bolometer utilises Schottky contacts between a superconductor and an n{sup ++} doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we decrease the electron-phonon coupling in the device and increase the responsivity to incoming power. The strained silicon absorber is coupled to a planar aluminium twin-slot antenna designed to couple to 160 GHz and that serves as the superconducting contacts. From the measured optical responsivity and spectral response, we calculate a maximum optical efficiency of 50% for radiation coupled into the device by the planar antenna and an overall noise equivalent power, referred to absorbed optical power, of 1.1×10{sup −16} W Hz{sup −1/2} when the detector is observing a 300 K source through a 4 K throughput limiting aperture. Even though this optical system is not optimized, we measure a system noise equivalent temperature difference of 6 mK Hz{sup −1/2}. We measure the noise of the device using a cross-correlation of time stream data, measured simultaneously with two junction field-effect transistor amplifiers, with a base correlated noise level of 300 pV Hz{sup −1/2} and find that the total noise is consistent with a combination of photon noise, current shot noise, and electron-phonon thermal noise.

  6. Schottky contacts to polar and nonpolar n-type GaN

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hogyoung [Hanbat National University, Daejeon (Korea, Republic of); Phark, Soohyon [Max-Planck-Institut fur Mikrostrukturphysik, Halle (Germany); Song, Keunman [Korea Advanced Nano Fab Center, Suwon (Korea, Republic of); Kim, Dongwook [Ewha Woman' s University, Seoul (Korea, Republic of)

    2012-01-15

    Using the current-voltage measurements, we observed the barrier heights of c-plane GaN in Pt and Au Schottky contacts to be higher than those of a-plane GaN. However, the barrier height of c-plane GaN was lower than that of a-plane GaN in the Ti Schottky contacts. The N/Ga ratio calculated by integrating the X-ray photoelectron spectroscopy (XPS) spectra of Ga 3d and N 1s core levels showed that c-plane GaN induced more Ga vacancies near the interface than a-plane GaN in the Ti Schottky contacts, reducing the effective barrier height through an enhancement of the tunneling probability.

  7. Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode

    International Nuclear Information System (INIS)

    Saha, A.R.; Dimitriu, C.B.; Horsfall, A.B.; Chattopadhyay, S.; Wright, N.G.; O'Neill, A.G.; Maiti, C.K.

    2006-01-01

    Based on Quantum Mechanical (QM) carrier transport and the effects of interface states, a theoretical model has been developed to predict the anomalous current-voltage (I-V) characteristics of a non-ideal Ni-silicided Schottky diode at low temperatures. Physical parameters such as barrier height, ideality factor, series resistance and effective Richardson constant of a silicided Schottky diode were extracted from forward I-V characteristics and are subsequently used for the simulation of both forward and reverse I-V characteristics using a QM transport model in which the effects of interface state and bias dependent barrier reduction are incorporated. The present analysis indicates that the effects of barrier inhomogeneity caused by incomplete silicide formation at the junction and the interface states may change the conventional current transport process, leading to anomalous forward and reverse I-V characteristics for the Ni-silicided Schottky diode

  8. Understanding Pt-ZnO:In Schottky nanocontacts by conductive atomic force microscopy

    Science.gov (United States)

    Chirakkara, Saraswathi; Choudhury, Palash Roy; Nanda, K. K.; Krupanidhi, S. B.

    2016-04-01

    Undoped and In doped ZnO (IZO) thin films are grown on Pt coated silicon substrates Pt/Si by pulsed laser deposition to fabricate Pt/ZnO:In Schottky diodes. The Schottky diodes were investigated by conventional two-probe current-voltage (I-V) measurements and by the I-V spectroscopy tool of conductive atomic force microscopy (C-AFM). The large deviation of the ideality factor from unity and the temperature dependent Schottky barrier heights (SBHs) obtained from the conventional method imply the presence of inhomogeneous interfaces. The inhomogeneity of SBHs is confirmed by C-AFM. Interestingly, the I-V curves at different points are found to be different, and the SBHs deduced from the point diodes reveal inhomogeneity at the nanoscale at the metal-semiconductor interface. A reduction in SBH and turn-on voltage along with enhancement in forward current are observed with increasing indium concentration.

  9. Schottky barrier measurements on individual GaAs nanowires by X-ray photoemission microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Di Mario, Lorenzo [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Turchini, Stefano, E-mail: stefano.turchini@cnr.it [ISM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Zamborlini, Giovanni; Feyer, Vitaly [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, 52425 Jülich (Germany); Tian, Lin [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy); Schneider, Claus M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, 52425 Jülich (Germany); Fakultät für Physik and Center for Nanointegration Duisburg-Essen (CENIDE), Universität Duisburg-Essen, D-47048 Duisburg (Germany); Rubini, Silvia [IOM-CNR, TASC Laboratory, Basovizza 34149, Trieste (Italy); Martelli, Faustino, E-mail: faustino.martelli@cnr.it [IMM-CNR, via del Fosso del Cavaliere 100, 00133 Rome (Italy)

    2016-11-15

    Highlights: • The Schottky barrier at the interface between Cu and GaAs nanowires was measured. • Individual nanowires were investigated by X-ray Photoemission Microscopy. • The Schottky barrier at different positions along the nanowire was evaluated. - Abstract: We present measurements of the Schottky barrier height on individual GaAs nanowires by means of x-ray photoelectron emission microscopy (XPEEM). Values of 0.73 and 0.51 eV, averaged over the entire wires, were measured on Cu-covered n-doped and p-doped GaAs nanowires, respectively, in agreement with results obtained on bulk material. Our measurements show that XPEEM can become a feasible and reliable investigation tool of interface formation at the nanoscale and pave the way towards the study of size-dependent effects on semiconductor-based structures.

  10. ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

    Science.gov (United States)

    Takei, Kohei; Hashimoto, Shuichiro; Sun, Jing; Zhang, Xu; Asada, Shuhei; Xu, Taiyu; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu

    2016-04-01

    Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

  11. The controlled growth of graphene nanowalls on Si for Schottky photodetector

    Directory of Open Access Journals (Sweden)

    Quan Zhou

    2017-12-01

    Full Text Available Schottky diode with directly-grown graphene on silicon substrate has advantage of clean junction interface, promising for photodetectors with high-speed and low noise. In this report, we carefully studied the influence of growth parameters on the junction quality and photoresponse of graphene nanowalls (GNWs-based Schottky photodetectors. We found that shorter growth time is critical for lower dark current, but at the same time higher photocurrent. The influence of growth parameters was attributed to the defect density of various growth time, which results in different degrees of surface absorption for H2O/O2 molecules and P-type doping level. Raman characterization and vacuum annealing treatment were carried out to confirm the regulation mechanism. Meanwhile, the release of thermal stress also makes the ideality factor η of thinner sample better than the thicker. Our results are important for the response improvement of photodetectors with graphene-Si schottky junction.

  12. High performance Schottky diodes based on indium-gallium-zinc-oxide

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiawei; Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Xin, Qian [School of Physics, Shandong University, Jinan 250100 (China)

    2016-07-15

    Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in the rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.

  13. First results from the LHC Schottky Monitor operated with Direct Diode Detection

    CERN Document Server

    Gasior, M

    2012-01-01

    The LHC is equipped with a Schottky diagnostic system based on 4.8 GHz resonant pick-ups. Their signals are processed according to a three-stage down-mixing scheme, working well in most beam conditions. An important exception is the period of energy ramp of proton beams, when the noise floor of the observed beam spectrum increases dramatically and the Schottky sidebands disappear. To study beam spectra in such conditions the signals from the Schottky pick-ups were split and the second half of their power was processed with a copy of the LHC tune measurement electronics, modified for this application. The experimental set-up is based on simple diode detectors followed by signal processing in the kHz range and 24-bit audio ADCs. With such a test system LHC beam spectra were successfully observed. This contribution presents the used hardware and obtained results.

  14. Analysis and modelling of GaN Schottky-based circuits at millimeter wavelengths

    International Nuclear Information System (INIS)

    Pardo, D; Grajal, J

    2015-01-01

    This work presents an analysis of the capabilities of GaN Schottky diodes for frequency multipliers and mixers at millimeter wavelengths. By using a Monte Carlo (MC) model of the diode coupled to a harmonic balance technique, the electrical and noise performances of these circuits are investigated. Despite the lower electron mobility of GaN compared to GaAs, multipliers based on GaN Schottky diodes can be competitive in the first stages of multiplier chains, due to the excellent power handling capabilities of this material. The performance of these circuits can be improved by taking advantage of the lateral Schottky diode structures based on AlGaN/GaN HEMT technology. (paper)

  15. The Schottky energy barrier dependence of charge injection in organic light-emitting diodes

    Science.gov (United States)

    Campbell, I. H.; Davids, P. S.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

    1998-04-01

    We present device model calculations of the current-voltage (I-V) characteristics of organic diodes and compare them with measurements of structures fabricated using MEH-PPV. The structures are designed so that all of the current is injected from one contact. The I-V characteristics are considered as a function of the Schottky energy barrier to charge injection from the contact. Experimentally, the Schottky barrier is varied from essentially zero to more than 1 eV by using different metal contacts. A consistent description of the device I-V characteristics is obtained as the Schottky barrier is varied from small values, less than about 0.4 eV, where the current flow is space-charge limited to larger values where it is contact limited.

  16. Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

    International Nuclear Information System (INIS)

    Zhao Sheng-Lei; Mi Min-Han; Luo Jun; Wang Yi; Dai Yang; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Hou Bin

    2014-01-01

    In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages (BVs) simultaneously in AlGaN/GaN high-electron mobility transistors (HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmicdrain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from −5 V to −49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  17. Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

    Directory of Open Access Journals (Sweden)

    H. MAZARI

    2014-05-01

    Full Text Available The current-voltage (I-V characteristics of Pt/(n.u.d-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-recombination, tunneling and leakage currents caused by inhomogeneities and defects at metal-semiconductor interface were taken into account.

  18. Effect of the ion bombardment on the apparent barrier height in GaAs Schottky junctions

    International Nuclear Information System (INIS)

    Horvath, Zs. J.

    1994-01-01

    The bombardment of the semiconductor with different particles often results in the change of the doping concentration at the semiconductor surface. In this paper the effects of this near-interface concentration change on the apparent and real Schottky barrier heights are discussed. Experimental results obtained in GaAs Schottky junctions prepared on ion-bombarded semiconductor surfaces are analysed, and it is shown that their electrical characteristics are strongly influenced by the near-interface concentration change due to the ion bombardment. (author). 36 refs., 2 figs

  19. Demonstration of a 4H SiC betavoltaic nuclear battery based on Schottky barrier diode

    International Nuclear Information System (INIS)

    Qiao Dayong; Yuan Weizheng; Gao Peng; Yao Xianwang; Zang Bo; Zhang Lin; Guo Hui; Zhang Hongjian

    2008-01-01

    A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm 2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm 2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device. (authors)

  20. Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode

    International Nuclear Information System (INIS)

    Da-Yong, Qiao; Wei-Zheng, Yuan; Peng, Gao; Xian-Wang, Yao; Bo, Zang; Lin, Zhang; Hui, Guo; Hong-Jian, Zhang

    2008-01-01

    A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm 2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm 2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device

  1. GaAs Schottky versus p/i/n diodes for pixellated X-ray detectors

    CERN Document Server

    Bourgoin, J C

    2002-01-01

    We discuss the performances of GaAs p/i/n structures and Schottky barriers for application as photodetectors for high-energy photons. We compare the magnitude of the leakage current and the width of the depleted region for a given reverse bias. We mention the effect of states present at the metal-semiconductor interface on the extension of the space charge region in Schottky barriers. We illustrate this effect by a description of the capacitance behaviour of a Au-GaAs barrier under gamma irradiation.

  2. [Walter Leitsch. Sigismund III. von Polen und Jan Zamoysky : die Rolle Estlands in der Rivalität zwischen König und Hetman] / Martin Faber

    Index Scriptorium Estoniae

    Faber, Martin

    2009-01-01

    Arvustus: Leitsch, Walter. Sigismund III. von Polen und Jan Zamoysky : die Rolle Estlands in der Rivalität zwischen König und Hetman. Wien : Verlag der Österreichischen Akademie der Wissenschaften, 2006

  3. Business Case Analysis of the Walter Reed Army Medical Center Medical/Surgical Prime Vendor Generation III Service Level Electron Program

    National Research Council Canada - National Science Library

    Markot, Peter B

    2007-01-01

    ...) staffing and medical/surgical services offered under the Prime Vendor (PV) Generation III contract would provide the best supply chain management solution for Walter Reed Army Medical Center (WRAMC...

  4. Hydromagnetic thermosolutal instability of compressible walters' (model B' rotating fluid permeated with suspended particles in porous medium

    Directory of Open Access Journals (Sweden)

    G Rana

    2016-09-01

    Full Text Available The thermosolutal instability of compressible Walters' (model B' elastico-viscous rotating fluid permeated with suspended particles (fine dust in the presence of vertical magnetic field in porous medium is considered. By applying normal mode analysis method, the dispersion relation has been derived and solved analytically. It is observed that the rotation, magnetic field, suspended particles and viscoelasticity introduce oscillatory modes. For stationary convection the Walters' (model B' fluid behaves like an ordinary Newtonian fluid and it is observed that the rotation and stable solute gradient has stabilizing effects and suspended particles are found to have destabilizing effect on the system, whereas the medium permeability has stabilizing or destabilizing effect on the system under certain conditions. The magnetic field has destabilizing effect in the absence of rotation, whereas in the presence of rotation, magnetic field has stabilizing or destabilizing effect under certain conditions.

  5. Strain analysis of I-c(epsilon) characteristic of YBCO coated conductor measured by a Walters spring

    OpenAIRE

    Sugano, M; Choi, S; Miyazoe, A; Miyamatsu, K; Ando, T; Itoh, K; Kiyoshi, T; Wada, H; Selvamanickam, V

    2008-01-01

    lc-strain characteristic of YBCO coated conductor was measured using a Walters spring (WASP). In this technique, additional bending and thermal strains induced to the YBCO layer should be considered. In order to produce different initial bending strain to the YBCO layer, the conductor was wound around the springs with different diameters and in the different bending directions. The clear evidence was obtained that -strain curves using a WASP strongly depend on the initial bending strain state...

  6. The utopian challenge to global capitalism by Walter van den Broeck in Terug naar Walden

    Directory of Open Access Journals (Sweden)

    Andries Visagie

    2012-12-01

    Full Text Available The socialist sympathies that inform the writing of Flemish author Walter van den Broeck align him with a well-established tradition of socially engaged writing in Flanders. In his novel Terug naar Walden (Back to Walden, published in 2009, he revisits the Walden project of the Dutch reformer and writer Frederik van Eeden (1860−1932. Van den Broeck suggests that a reconsideration of the socialist ideals that inspired Van Eeden to establish settlements in the Netherlands and the United States is warranted in the light of the economic crisis triggered by unchecked capitalist practices in 2008. In Terug naar Walden Ruler Marsh, the richest man in the world, unleashes a global financial crisis as a form of retaliation against the capitalist system that ruined his parents. Marsh returns to the Kempen in Flanders where his family originated. In a Heideggerean affirmation of the local as exemplified by the country road, Van den Broeck articulates his vision of the common, that theorists Michael Hardt and Antonio Negri in their Empire trilogy have attempted to salvage from communist thinking, with a utopian notion that a stronger connection with the land and the people within one’s immediate environment may provide a useful premise for the development of viable alternatives to capitalism.

  7. Critica e derive del mito nell’opera di Walter Benjamin

    Directory of Open Access Journals (Sweden)

    Matteo Meloni

    2015-03-01

    Full Text Available La ri essione critica sul mito e sulle sue derive nel mondo moderno sono pre- senti in buona parte del pensiero benjaminiano. A cominciare dagli scritti di filosofia del linguaggio nei quali il mito biblico istituisce il fondamento ontologico della parola originaria, tra rifiuto della storia e messianismo, fino alle considerazioni sul diritto e sul concetto di destino nella società borghese. Ma è soprattutto nella critica letteraria che Benjamin espone le sue più brillanti intuizioni: dallo sprigionarsi delle forze primordiali della natura che, nelle Affinità elettive di Goethe, tra violenza del diritto e libertà etica, si impossessano dei personaggi, alla dialettica del “risveglio” con Proust e i surrealisti, e all’esperienza profonda della vie antérieur di Baudelaire. Così, senza mai distanziarsi dal radicamento della condizione storica del suo tempo e senza mai cadere in facile misticismo, Walter Benjamin ha acutamente ispezionato le tracce del mito nella modernità, auspicando con intelligenza la liberazione umana dalla schiavitù della barbarie contingenti.

  8. Alfred Walter Campbell and the visual functions of the occipital cortex.

    Science.gov (United States)

    Macmillan, Malcolm

    2014-07-01

    In his pioneering cytoarchitectonic studies of the human brain, Alfred Walter Campbell identified two structurally different areas in the occipital lobes and assigned two different kinds of visual functions to them. The first area, the visuosensory, was essentially on the mesial surface of the calcarine fissure. It was the terminus of nervous impulses generated in the retina and was where simple visual sensations arose. The second area, the visuopsychic, which surrounded or invested the first, was where sensations were interpreted and elaborated into visual perceptions. I argue that Campbell's distinction between the two areas was the starting point for the eventual differentiation of areas V1-V5. After a brief outline of Campbell's early life and education in Australia and of his Scottish medical education and early work as a pathologist at the Lancashire County Lunatic Asylum at Rainhill near Liverpool, I summarise his work on the human brain. In describing the structures he identified in the occipital lobes, I analyse the similarities and differences between them and the related structures identified by Joseph Shaw Bolton. I conclude by proposing some reasons for how that work came to be overshadowed by the later studies of Brodmann and for the more general lack of recognition given Campbell and his work. Those reasons include the effect of the controversies precipitated by Campbell's alliance with Charles Sherrington over the functions of the sensory and motor cortices. Copyright © 2012 Elsevier Ltd. All rights reserved.

  9. Eurydice at Euston?: Walter Benjamin and Marc Augé Go Underground

    Directory of Open Access Journals (Sweden)

    Graeme Gilloch

    2014-01-01

    Full Text Available Taking as its point of departure Walter Benjamin’s repeatedly unsuccessful attempt to give spatial form to his past, this paper suggests that it is perhaps the contemporary French anthropologist, Marc Augé, who provides the most appropriate envisioning of a ‘map of memories’ in his brief writings on the Parisian métro system. For Augé, the labyrinthine subway network constitutes nothing less than a ‘memory machine’ in which lines and station names serve as mnemonics, recalling long-forgotten childhood encounters and experiences. Mirroring the cityscape above, places themselves unexplored, unknown, the serried toponyms of the métro become an incantation summoning forth the shades of the past. As Augé points out, those stations that provide opportunities to change lines are felicitously termed ‘correspondences’, a Baudelairean term that fascinated Benjamin and informed his key historiographical notion of the ‘dialectical image,’ the intersection and mutual illumination of past and present moments. For me, Augé’s highly suggestive reflections bring to mind my own memories of a London childhood around 1970. Looking at the London underground map today, I cannot but see the sites of many past meetings and partings, dots connected by lines forming complex figures, constellations of memory.

  10. Walter Benjamin em Gotham City: sobre a violência pura

    Directory of Open Access Journals (Sweden)

    Andityas Soares de Moura Costa Matos

    2016-12-01

    Full Text Available http://dx.doi.org/10.5007/2177-7055.2016v37n74p137 O presente trabalho reflete brevemente sobre as ideias de violência pura e de estado de exceção efetivo no pensamento de Walter Benjamin (1892-1940, lançando na seção 2 a hipótese de que são resultados de uma longa meditação que começa com o texto Sobre a crítica da violência (1921, passa pelo denso fragmento O caráter destrutivo (1931 e chega à obra intitulada Teses sobre o conceito de história (1940, quando Benjamin percebe com clareza à impossibilidade de se negociar com as instituições democrático-liberais, as quais funcionam como estruturas desaceleradoras (katéchonta do tempo da revolução, leitura apresentada na seção 1 mediante a profanação do conceito original schmittiano. O artigo passa então na seção 3 a interpretar as ideias de Benjamin em um cenário de ficção – a trilogia Batman de Christopher Nolan – que a cada dia parece mais terrivelmente real, concluindo com um parágrafo de sabor agambeniano sobre o direito-que-vem (seção 4.

  11. Genetic Drift. The ancient Egyptian dwarfs of the Walters Art Museum.

    Science.gov (United States)

    Kozma, Chahira

    2010-10-01

    The ancient Egyptians left an impressive artistic legacy documenting many aspects of their society including the existence of dwarfs as highly valued members. In previous publications in the Journal, I discussed dwarfs and skeletal dysplasia in ancient Egypt. In this study, I examined the ancient Egyptian representations of dwarfs of the Walters Art Museum in Baltimore, Maryland. One of the highlights of the collection is a group of five ivory figurines from Predynastic Times (pre 3500-3100 BCE) depicting a couple, a man with a child, and two females. Representations from other periods include ordinary as well as dwarf deities. The dwarf gods, Bes and Ptah, are frequently depicted holding or biting snakes or standing on crocodiles symbolizing their ability to ward off dangers. A couple of statuettes from the Greco-Roman Period that, in contrast to earlier Egyptian Periods, depict harsh physical anomalies, twisted bodies, and facial pain. The artistic impression can be interpreted as either tragic or humorous. The grotesque depiction of dwarfs during the Greco-Roman Period in ancient Egypt is believed to be due to a greater infusion of Hellenistic influence. This study provides a microcosm of the legacy of dwarfs in ancient Egypt and supports the premise that dwarfs were accepted and integrated in the ancient Egyptian society, and with a few exceptions, their disorder was not depicted as a physical handicap. Copyright © 2010 Wiley-Liss, Inc.

  12. Youth and pedagogy (On the genesis of the thought of Walter Benjamin

    Directory of Open Access Journals (Sweden)

    Lluís BALLESTER BRAGE

    2012-02-01

    Full Text Available The authors analyze the 16 early writings that W. Benjamin wrote between the ages of 19 and 23, all of which relate to educative matters, and where the decisive influence of G. Wyneken is shown. The issues that the young Walter Benjamin addresses are also studied, such as idealism and youth culture, the necessity of reform in schools and universities and also in moral, aesthetic and religious education as well as in juvenile sexuality. However, the most important thing is that in these works one can find the constants that characterize the rest of his production, such as his individualism, his obsession with his own childhood experiences, his contradictions and thematic transitions, his interest in aesthetics and art, the complexity of his work, his agnosticism and his consideration of Judaism as a cultural element, and above all his critical sense and his vocation for criticism which starts to become evident. Somehow in these articles of educative content one can discover many of the constants of what will be the subsequent work of this author.

  13. DESPERTAR DEL SUEÑO: WALTER BENJAMIN Y EL PROBLEMA DEL SHOCK

    Directory of Open Access Journals (Sweden)

    Guido Vespucci

    2010-01-01

    Full Text Available El presente artículo pretende analizar la noción de shock como una puerta de acceso a la obra de Walter Benjamin. A través de la exploración de algunos de sus escritos más originales (tales como «La obra de arte en la época de su reproductibilidad técnica», las «Tesis de filosofía de la historia», el Libro de los Pasajes, entre otros y sobre la base de una selección de ensayos acerca de su obra, intentaremos capturar la productividad analítica del concepto con el fin de poder iluminar su función operativa (filosófica y política, en el tratamiento que Benjamin realiza sobre una variedad de temas como el arte, la cultura, el capitalismo, la reproducción técnica y la experiencia del sujeto moderno.

  14. Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions

    KAUST Repository

    Tian, He; Tan, Zhen; Wu, Can; Wang, Xiaomu; Mohammad, Mohammad Ali; Xie, Dan; Yang, Yi; Wang, Jing; Li, Lain-Jong; Xu, Jun; Ren, Tian-Ling

    2014-01-01

    0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced

  15. Spatially inhomogeneous barrier height in graphene/MoS2 Schottky junctions

    Science.gov (United States)

    Tomer, Dushyant; Rajput, Shivani; Li, Lian

    Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties. In this study, graphene Schottky junctions are fabricated by transferring CVD monolayer graphene on mechanically exfoliated MoS2 multilayers. The forward bias current-voltage characteristics are measured in the temperature range of 210-300 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature. Such behavior is attributed to Schottky barrier inhomogeneities possibly due to graphene ripples and ridges at the junction interface as suggested by atomic force microscopy. Assuming a Gaussian distribution of the barrier height, mean barrier of 0.97+/-0.10 eV is found for the graphene MoS2 junction. Our findings provide significant insight on the barrier height inhomogeneities in graphene/two dimensional semiconductor Schottky junctions. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering Award No. DEFG02-07ER46228.

  16. Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions.

    Science.gov (United States)

    Tomer, D; Rajput, S; Hudy, L J; Li, C H; Li, L

    2015-05-29

    Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current-voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature for both junctions. Such behavior is attributed to barrier inhomogeneities that arise from interfacial disorders as revealed by scanning tunneling microscopy/spectroscopy. Assuming a Gaussian distribution of the barrier heights, mean values of 1.14 ± 0.14 eV and 0.76 ± 0.10 eV are found for Gr/Si and Gr/GaAs junctions, respectively. These findings resolve the origin of barrier height inhomogeneities in these Schottky junctions.

  17. Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

    International Nuclear Information System (INIS)

    Tomer, D; Rajput, S; Hudy, L J; Li, L; Li, C H

    2015-01-01

    Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current–voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature for both junctions. Such behavior is attributed to barrier inhomogeneities that arise from interfacial disorders as revealed by scanning tunneling microscopy/spectroscopy. Assuming a Gaussian distribution of the barrier heights, mean values of 1.14 ± 0.14 eV and 0.76 ± 0.10 eV are found for Gr/Si and Gr/GaAs junctions, respectively. These findings resolve the origin of barrier height inhomogeneities in these Schottky junctions. (paper)

  18. A graphene/single GaAs nanowire Schottky junction photovoltaic device.

    Science.gov (United States)

    Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

    2018-05-04

    A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

  19. Schottky nanocontact of one-dimensional semiconductor nanostructures probed by using conductive atomic force microscopy

    Science.gov (United States)

    Lee, Jung Ah; Rok Lim, Young; Jung, Chan Su; Choi, Jun Hee; Im, Hyung Soon; Park, Kidong; Park, Jeunghee; Kim, Gyu Tae

    2016-10-01

    To develop the advanced electronic devices, the surface/interface of each component must be carefully considered. Here, we investigate the electrical properties of metal-semiconductor nanoscale junction using conductive atomic force microscopy (C-AFM). Single-crystalline CdS, CdSe, and ZnO one-dimensional nanostructures are synthesized via chemical vapor transport, and individual nanobelts (or nanowires) are used to fabricate nanojunction electrodes. The current-voltage (I -V) curves are obtained by placing a C-AFM metal (PtIr) tip as a movable contact on the nanobelt (or nanowire), and often exhibit a resistive switching behavior that is rationalized by the Schottky (high resistance state) and ohmic (low resistance state) contacts between the metal and semiconductor. We obtain the Schottky barrier height and the ideality factor through fitting analysis of the I-V curves. The present nanojunction devices exhibit a lower Schottky barrier height and a higher ideality factor than those of the bulk materials, which is consistent with the findings of previous works on nanostructures. It is shown that C-AFM is a powerful tool for characterization of the Schottky contact of conducting channels between semiconductor nanostructures and metal electrodes.

  20. Development of high performance Schottky barrier diode and its application to plasma diagnostics

    International Nuclear Information System (INIS)

    Fujita, Junji; Kawahata, Kazuo; Okajima, Shigeki

    1993-10-01

    At the conclusion of the Supporting Collaboration Research on 'Development of High Performance Detectors in the Far Infrared Range' carried out from FY1990 to FY1992, the results of developing Schottky barrier diode and its application to plasma diagnostics are summarized. Some remarks as well as technical know-how for the correct use of diodes are also described. (author)

  1. Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN ...

    Indian Academy of Sciences (India)

    Pt/Ru Schottky rectifiers; n-type GaN; temperature–dependent electrical properties; inhomogeneous barrier heights .... a 2 μm thick Si-doped GaN films which were grown by .... ted values of ap using (9) for two Gaussian distributions of bar-.

  2. Simulation of electrical characteristics of GaN vertical Schottky diodes

    Science.gov (United States)

    Łukasiak, Lidia; Jasiński, Jakub; Jakubowski, Andrzej

    2016-12-01

    Reverse current of GaN vertical Schottky diodes is simulated using Silvaco ATLAS to optimize the geometry for the best performance. Several physical quantities and phenomena, such as carrier mobility and tunneling mechanism are studied to select the most realistic models. Breakdown voltage is qualitatively estimated based on the maximum electric field in the structure.

  3. Plasmonic silicon Schottky photodetectors: the physics behind graphene enhanced internal photoemission

    DEFF Research Database (Denmark)

    Levy, Uriel; Grajower, Meir; Gonçalves, P. A. D.

    2017-01-01

    a physical model where surface plasmon polaritons enhance the absorption in a single-layer graphene by enhancing the field along the interface. The relatively long relaxation time in graphene allows for multiple attempts for the carrier to overcome the Schottky barrier and penetrate into the semiconductor...

  4. ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

    Indian Academy of Sciences (India)

    Abstract. Electrical analysis of Al/p-Si Schottky diode with titanium dioxide (TiO2) thin film was performed at ..... This work was partially supported by The Management Unit of Scientific Research Project of Bozok University and Hitit. University.

  5. Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

    Energy Technology Data Exchange (ETDEWEB)

    Piñero, J.C., E-mail: josecarlos.pinero@uca.es [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Araújo, D. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Fiori, A. [National Institute for Materials Science, Tsukuba, Ibaraki (Japan); Traoré, A. [Institut Néel, CNRS-UJF, av. des Martyrs, Grenoble,38042 France (France); Villar, M.P. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, Puerto Real, Cádiz,11510 (Spain); Eon, D.; Muret, P.; Pernot, J. [Institut Néel, CNRS-UJF, av. des Martyrs, Grenoble,38042 France (France); Teraji, T. [National Institute for Materials Science, Tsukuba, Ibaraki (Japan)

    2017-02-15

    Highlights: • Metal/O-terminated diamond interfaces are analyzed by a variety of TEM techniques. • Thermal treatment is shown to modify structural and chemical interface properties. • Electrical behavior vs annealing is shown to be related with interface modification. • Interfaces are characterized with atomic resolution to probe inhomogeneities. • Oxide formation and modification is demonstrated in both Schottky diodes. - Abstract: Electrical and nano-structural properties of Zr and WC-based Schottky power diodes are compared and used for investigating oxide-related effects at the diamond/metal interface. Differences in Schottky barrier heights and ideality factors of both structures are shown to be related with the modification of the oxygen-terminated diamond/metal interface configuration. Oxide formation, oxide thickness variations and interfacial oxygen redistribution, associated with thermal treatment are demonstrated. Ideality factors close to ideality (n{sub WC} = 1.02 and n{sub Zr} = 1.16) are obtained after thermal treatment and are shown to be related with the relative oxygen content at the surface (OCR{sub WC} = 3.03 and OCR{sub Zr} = 1.5). Indeed, thermal treatment at higher temperatures is shown to promote an escape of oxygen for the case of the WC diode, while it generates a sharper accumulation of oxygen at the metal/diamond interface for the case of Zr diode. Therefore, the metal-oxygen affinity is shown to be a key parameter to improve diamond-based Schottky diodes.

  6. Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes

    International Nuclear Information System (INIS)

    Chand, Subhash; Bala, Saroj

    2007-01-01

    The current-voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current-voltage data of the metal-insulator-semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current-voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal-semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal-insulator-semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal-insulator-semiconductor diodes are analysed and possible mechanisms are discussed

  7. An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.

    2017-01-01

    In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can...

  8. Summer Student Report 2014: Schottky component qualification and RF filter characterization

    CERN Document Server

    Egidos Plaja, Nuria

    2014-01-01

    This Summer Student project has been developed in BE-BI-QP department under the supervision of Manfred Wendt. Main goals of the task to be performed are the following: 1)\tFilter characterization: the student will get familiar with the Vector Network Analizer (VNA), S-parameter measurement and PSPICE modelling of low-pass filters. 2)\tFilter response matching: an algorithm to compare and classify filter responses into best-matching pairs will be developed. 3)\tSchottky monitor filter qualification: S-parameter and time domain measurements will be carried out with filters related to Schottky monitor and results will be benchmarked. 4)\tSchottky monitor amplifier measurement: noise figure and gain at a given frequency will be measured for a set of Low Noise Amplifiers related to Schottky monitor. -1dB compression point and 3rd order interception point will be measured too for education purposes. For the development of this project, the student will get familiar with RF measure devices (VNA, VSA), theoretical concep...

  9. Comparison of magnetic and electrostatic Schottky pick-up in the CERN AD

    CERN Document Server

    Federmann, S

    2013-01-01

    The present note is intended to exploit the possibility of using a dedicated electrostatic beam pick-up for Schottky diagnostics in the future ELENA ring. A test setup is described allowing the evaluation of its performance compared to the extra low-noise beam current transformer used successfully in the AD. The results of this experiment are summarized and discussed.

  10. RF fields due to Schottky noise in a coasting particle beam

    CERN Document Server

    Faltin, L

    1977-01-01

    The RF fields inside a rectangular chamber excited by the Schottky noise current inherently present in a coasting particle beam are calculated, using a simple beam model. Vertical betatron oscillations are assumed. The power flow accompanying the beam is given as well as the resulting characteristic impedance. Numerical results are presented.

  11. 63Ni schottky barrier nuclear battery of 4H-SiC

    International Nuclear Information System (INIS)

    Xiao-Ying Li; Yong Ren; Xue-Jiao Chen; Da-Yong Qiao; Wei-Zheng Yuan

    2011-01-01

    The design, fabrication, and testing of a 4H-SiC Schottky betavoltaic nuclear battery based on MEMS fabrication technology are presented in this paper. It uses a Schottky diode with an active area of 3.14 mm 2 to collect the charge from a 4 mCi/cm 2 63 Ni source. Some of the critical steps in process integration for fabricating silicon carbide-based Schottky diode were addressed. A prototype of this battery was fabricated and tested under the illumination of the 63 Ni source with an activity of 0.12 mCi. An open circuit voltage (V OC ) of 0.27 V and a short circuit current density (J SC ) of 25.57 nA/cm 2 are measured. The maximum output power density (P max ) of 4.08 nW/cm 2 and power conversion efficiency (η) of 1.01% is obtained. The performance of this battery is expected to be significantly improved by using larger activity and optimizing the design and processing technology of the battery. By achieving comparable performance with previously constructed p-n or p-i-n junction energy conversion structures, the Schottky barrier diode proves to be a feasible approach to achieve practical betavoltaics. (author)

  12. Utilizing Schottky barriers to suppress short-channel effects in organic transistors

    Science.gov (United States)

    Fernández, Anton F.; Zojer, Karin

    2017-10-01

    Transistors with short channel lengths exhibit profound deviations from the ideally expected behavior. One of the undesired short-channel effects is an enlarged OFF current that is associated with a premature turn on of the transistor. We present an efficient approach to suppress the OFF current, defined as the current at zero gate source bias, in short-channel organic transistors. We employ two-dimensional device simulations based on the drift-diffusion model to demonstrate that intentionally incorporating a Schottky barrier for injection enhances the ON-OFF ratio in both staggered and coplanar transistor architectures. The Schottky barrier is identified to directly counteract the origin of enlarged OFF currents: Short channels promote a drain-induced barrier lowering. The latter permits unhindered injection of charges even at reverse gate-source bias. An additional Schottky barrier hampers injection for such points of operations. We explain how it is possible to find the Schottky barrier of the smallest height necessary to exactly compensate for the premature turn on. This approach offers a substantial enhancement of the ON-OFF ratio. We show that this roots in the fact that such optimal barrier heights offer an excellent compromise between an OFF current diminished by orders of magnitude and an only slightly reduced ON current.

  13. Low Temperature Hydrothermal Growth of ZnO Nanorod Films for Schottky Diode Application

    International Nuclear Information System (INIS)

    Singh, Shaivalini; Park, Si-Hyun

    2016-01-01

    The purpose of this research is to report on the fabrication and characterizations of Pd/ZnO nanorod-based Schottky diodes for optoelectronic applications. ZnO nanorods (NRs) were grown on silicon (Si) substrates by a two step hydrothermal method. In the first step, a seed layer of pure ZnO was deposited from a solution of zinc acetate and ethyl alcohol, and then in the second step, the main growth of the ZnO NRs was done over the seed layer. The structural morphology and optical properties of the ZnO NR films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectroscopy. The electrical characterization of the Pd/ZnO NR contacts was studied using a current-voltage (I-V) tool. The ZnO NR films exhibited a wurtzite ZnO structure,and the average length of the ZnO NRs were in the range of 750 nm to 800 nm. The values of ideality factor, turn-on voltage and reverse saturation current were calculated from the I-V characteristics of Pd/ZnO NR-based Schottky diodes. The study demonstrates that Pd/ZnO NR Schottky contacts fabricated by a simple and inexpensive method can be used as a substitute for conventional Schottky diodes for optoelectronic applications.

  14. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    International Nuclear Information System (INIS)

    Onojima, Norio; Kasamatsu, Akihumi; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki

    2008-01-01

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g m ) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel

  15. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    Energy Technology Data Exchange (ETDEWEB)

    Onojima, Norio [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)], E-mail: nonojima@nict.go.jp; Kasamatsu, Akihumi; Hirose, Nobumitsu [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Mimura, Takashi [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Matsui, Toshiaki [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)

    2008-07-30

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g{sub m}) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f{sub T} compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.

  16. Schottky diode model for non-parabolic dispersion in narrow-gap semiconductor and few-layer graphene

    Science.gov (United States)

    Ang, Yee Sin; Ang, L. K.; Zubair, M.

    Despite the fact that the energy dispersions are highly non-parabolic in many Schottky interfaces made up of 2D material, experimental results are often interpreted using the conventional Schottky diode equation which, contradictorily, assumes a parabolic energy dispersion. In this work, the Schottky diode equation is derived for narrow-gap semiconductor and few-layer graphene where the energy dispersions are highly non-parabolic. Based on Kane's non-parabolic band model, we obtained a more general Kane-Schottky scaling relation of J (T2 + γkBT3) which connects the contrasting J T2 in the conventional Schottky interface and the J T3 scaling in graphene-based Schottky interface via a non-parabolicity parameter, γ. For N-layer graphene of ABC -stacking and of ABA -stacking, the scaling relation follows J T 2 / N + 1 and J T3 respectively. Intriguingly, the Richardson constant extracted from the experimental data using an incorrect scaling can differ with the actual value by more than two orders of magnitude. Our results highlights the importance of using the correct scaling relation in order to accurately extract important physical properties, such as the Richardson constant and the Schottky barrier's height.

  17. Canonical Schottky barrier heights of transition metal dichalcogenide monolayers in contact with a metal

    Science.gov (United States)

    Szcześniak, Dominik; Hoehn, Ross D.; Kais, Sabre

    2018-05-01

    The transition metal dichalcogenide (M X2 , where M =Mo , W and X =S , Se, Te) monolayers are of high interest for semiconducting applications at the nanoscale level; this interest is due to both their direct band gaps and high charge mobilities. In this regard, an in-depth understating of the related Schottky barrier heights, associated with the incorporation of M X2 sheets into novel low-dimensional metal-semiconductor junctions, is of crucial importance. Herein, we generate and provide analysis of the Schottky barrier heights behavior to account for the metal-induced gap states concept as its explanation. In particular, the present investigations concentrate on the estimation of the charge neutrality levels directly by employing the primary theoretical model, i.e., the cell-averaged Green's function formalism combined with the complex band structure technique. The results presented herein place charge neutrality levels in the vicinity of the midgap; this is in agreement with previous reports and analogous to the behavior of three-dimensional semiconductors. The calculated canonical Schottky barrier heights are also found to be in agreement with other computational and experimental values in cases where the difference between electronegativities of the semiconductor and metal contact is small. Moreover, the influence of the spin-orbit effects is herein considered and supports that Schottky barrier heights have metal-induced gap state-derived character, regardless whether spin-orbit coupling interactions are considered. The results presented within this report constitute a direct and vital verification of the importance of metal-induced gap states in explaining the behavior of observed Schottky barrier heights at M X2 -metal junctions.

  18. Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Jian-Jhou; Lin, Yow-Jon, E-mail: rzr2390@yahoo.com.tw

    2014-05-01

    The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes with and without sulfide treatment. The graphene/n-type Si Schottky diode without sulfide treatment shows a poor rectifying behavior with an ideality factor (η) of 4.2 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with sulfide treatment for 5 min shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using sulfide treatment. In addition, the graphene/n-type Si Schottky diode with sulfide treatment for 10 min shows a poor rectifying behavior with η of 2.5 and high leakage. Note, a suitable sulfide treatment time is an important issue for improving the device performance. - Highlights: • Graphene/Si diodes with sulfide treatment for 5 min show a good rectifying behavior. • Graphene/Si diodes without sulfide treatment show a poor rectifying behavior. • The interfacial defects of Schottky diodes were controlled by sulfide treatment. • Such an improvement indicates that a good passivation is formed at the interface. • A suitable sulfide treatment time is an important issue for improving performances.

  19. Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

    Science.gov (United States)

    Aydin, H.; Bacaksiz, C.; Yagmurcukardes, N.; Karakaya, C.; Mermer, O.; Can, M.; Senger, R. T.; Sahin, H.; Selamet, Y.

    2018-01-01

    We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1‧:3″-terphenyl-5‧ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1‧:3‧1‧-terphenyl-5‧ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π-π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.

  20. Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

    International Nuclear Information System (INIS)

    Zeng, Jian-Jhou; Lin, Yow-Jon

    2014-01-01

    The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes with and without sulfide treatment. The graphene/n-type Si Schottky diode without sulfide treatment shows a poor rectifying behavior with an ideality factor (η) of 4.2 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with sulfide treatment for 5 min shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using sulfide treatment. In addition, the graphene/n-type Si Schottky diode with sulfide treatment for 10 min shows a poor rectifying behavior with η of 2.5 and high leakage. Note, a suitable sulfide treatment time is an important issue for improving the device performance. - Highlights: • Graphene/Si diodes with sulfide treatment for 5 min show a good rectifying behavior. • Graphene/Si diodes without sulfide treatment show a poor rectifying behavior. • The interfacial defects of Schottky diodes were controlled by sulfide treatment. • Such an improvement indicates that a good passivation is formed at the interface. • A suitable sulfide treatment time is an important issue for improving performances

  1. Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles study

    International Nuclear Information System (INIS)

    Nakayama, T.; Kobinata, K.

    2012-01-01

    Schottky-barrier changes by the segregation and structural disorder are studied using the first-principles calculations and adopting Au/Si interface. The Schottky barrier for electrons simply decreases as increasing the valency of segregated atoms from II to VI families, which variation is shown closely related to how the Si atoms are terminated at the interface. On the other hand, the structural disorders (defects) prefer to locate near the interface and the Schottky barrier for hole carriers does not change in cases of Si vacancy and Au substitution, while it increases in cases of Si and Au interstitials reflecting the appearance of Si dangling bonds.

  2. Un taccuino a forma di strada. Su "Einbahnstrasse" di Walter Benjamin

    Directory of Open Access Journals (Sweden)

    Pier Giovanni Adamo

    2016-05-01

    Full Text Available La poetica di F. Schlegel ha realizzato una storicizzazione della teoria dei generi letterari sostituendo alla dicotomia del classicismo tra forma e contenuto una distinzione tra forma e spirito, secondo cui i materiali linguistico-tematici rappresentano i precipitati di quest’ultimo. Riprendendo questa intuizione di P. Szondi, potremmo affermare che, nella modernità letteraria, l’ibridazione è il processo di transizione dei materiali attraverso le forme. Un’opera tanto esemplare quanto strutturalmente rilevante, nell’orizzonte dell’ibridazione, è Einbahnstraße di Walter Benjamin, dove i materiali più disparati sono combinati a modellare una forma innovativa. Vi si mescolano stilemi della poesia in prosa, narrazione diaristica, (antimetodo surrealista, satira e intuizioni filosofiche. L’unicità, d’altra parte, risiede innanzitutto nell’essenza metacritica del procedimento organizzativo del libro: il frammentismo sistematico è un’applicazione pratica della teoria allegorica del montaggio, descritta nell’Ursprung des deutschen Trauerspiels. Il saggio si propone di leggere il testo come «un taccuino a forma di strada», anche per indagarne il valore di prologo al Passagenwerk, nato dall’avida lettura del Paysan de Paris di Aragon: istituisce un confronto per rilevare, nell’affinità di fondo, la  diversità di approccio tra il pensatore tedesco e il surrealismo, distinguendo tecniche di assemblaggio e ruolo dell’immaginario nell’uso di pubblicità e altri oggetti metropolitani. L’intenzione di una simile analisi di Einbahnstraße è dimostrare che Benjamin combina modelli letterari (Baudelaire, Proust, Kraus su tutti con i nuovi linguaggi artistici e le strategie discorsive della stampa per creare un’«immagine dialettica» dell’esistenza nel XX secolo.Friedrich Schlegel’s poetics realized a historicisation of literary genres theory by replacing classicist dichotomy between form and content with a

  3. Walter B. Cannon's World War I experience: treatment of traumatic shock then and now.

    Science.gov (United States)

    Ryan, Kathy L

    2018-06-01

    Walter B. Cannon (1871-1945), perhaps America's preeminent physiologist, volunteered for service with the Army Expeditionary Force (AEF) during World War I. He initially served with Base Hospital No. 5, a unit made up of Harvard clinicians, before moving forward to the front lines to serve at a casualty clearing station run by the British. During his time there, he performed research on wounded soldiers to understand the nature and causes of traumatic shock. Subsequently, Cannon performed animal experimentation on the causes of traumatic shock in the London laboratory of Dr. William Bayliss before being assigned to the AEF Central Medical Laboratory in Dijon, France, where he continued his experimental studies. During this time, he also developed and taught a curriculum on resuscitation of wounded soldiers to medical providers. Although primarily a researcher and teacher, Cannon also performed clinical duties throughout the war, serving with distinction under fire. After the war, Cannon wrote a monograph entitled Traumatic Shock (New York: Appleton, 1923), which encapsulated the knowledge that had been gained during the war, both from direct observation of wounded soldiers, as well as laboratory experimentation on the causes and treatment of traumatic shock. In his monograph, Cannon elucidates a number of principles concerning hemorrhagic shock that were later forgotten, only to be "rediscovered" during the current conflicts in Iraq and Afghanistan. This paper summarizes Cannon's wartime experiences and the knowledge gained concerning traumatic shock during World War I, with a comparison of current combat casualty care practices and knowledge to that which Cannon and his colleagues understood a century ago.

  4. Walter Baade: Father of the Two Stellar Populations and Pioneer Supernova Researcher

    Science.gov (United States)

    Osterbrock, D. E.

    2001-05-01

    Walter Baade was the great observational astronomer of the middle part of the past century. He lived and worked in Pasadena, where he ``discovered" the two stellar populations and did outstanding pioneer research on supernovae at Mount Wilson and Palomar Observatories from 1931 until 1959, when he returned to his native Germany, and died the following year. Baade was born in a little town in northwest Germany, and educated at Goettingen University, where he received his Ph.D. in 1919, just after the end of World War I. He got a research position at Hamburg Observatory, and quickly jumped into globular cluster and galactic structure work with its 40-in reflector, then the largest telescope in Europe. Baade recognized very early the great importance of the extremely rare ``highly luminous novae" which Heber D. Curtis and Knut Lundmark isolated in 1919-21. In 1929 Baade called these ``Hauptnovae" the key to measuring distances of faint galaxies. We call them supernovae today, a term he and Fritz Zwicky began using in 1932. Similarly Baade's first inkling that there was a spherically symmetric distribution of stars in our Galaxy, which he named Population II in his two great 1944 papers, came when he began picking up field RR Lyrae variables in 1926. Baade's research on the two stellar populations and supernovae was extremely important in opening up the whole fields of stellar and galactic evolution. His invited lectures at meetings and symposia, and his courses as a visiting professor inspired a whole generation of research astrophysicists. Baade's attractive personality made it possible for him to make his great discoveries in a land in which he was officially an enemy alien during World War II.

  5. Big Data and : Walter Lippmann and the fallacy of data privacy self-management

    Directory of Open Access Journals (Sweden)

    Jonathan A Obar

    2015-10-01

    Full Text Available In 1927, Walter Lippmann published The Phantom Public , denouncing the ‘mystical fallacy of democracy.’ Decrying romantic democratic models that privilege self-governance, he writes: “I have not happened to meet anybody, from a President of the United States to a professor of political science, who came anywhere near to embodying the accepted ideal of the sovereign and omnicompetent citizen.” Almost 90 years later, Lippmann’s pragmatism is as relevant as ever, and should be applied in new contexts where similar self-governance concerns persist. This paper does just that, repurposing Lippmann’s argument in the context of the ongoing debate over the role of the digital citizen in Big Data management. It is argued that proposals by the Federal Trade Commission, the White House and the US Congress, championing failed notice and choice privacy policy, perpetuate a self-governance fallacy comparable to Lippmann’s, referred to here as the fallacy of data privacy self-management . Even if the digital citizen had the faculties and the system for data privacy self-management, the digital citizen has little time for data governance. We desire the freedom to pursue the ends of digital production, without being inhibited by the means. We want privacy, and safety, but cannot complete all that is required for its protection. If it is true that the fallacy of democracy is similar to the fallacy of data privacy self-management, then perhaps the pragmatic solution is representative data management : a combination of non/for-profit digital dossier management via infomediaries that can ensure the protection of personal data, while freeing individuals from what Lippmann referred to as an ‘unattainable ideal.’

  6. De Walter Benjamin a Theodor Adorno: traços que permanecem na contemporaneidade

    Directory of Open Access Journals (Sweden)

    Carolina Diamantino Esser Santana

    2017-08-01

    Full Text Available O ensaio traz como base a crítica ao capitalismo, no que se refere aos efeitos negativos que ele impõe aos indivíduos, a partir dos estudos da primeira geração da Escola de Frankfurt. Analisar-se-á a história das ideias a partir de Walter Benjamin, Herbert Marcuse, Theodor Adorno e Max Horkheimer. Benjamin afirma que vive-se a perda da aura das obras de arte, já que a sua comercialização faz com que se perca a essência daquelas obras. Ademais, a imposição da novidade às obras e aos produtos consumidos representa uma ferramenta de manipulação do capitalismo, culminando na pobreza da experiência humana. Marcuse afirma que a sociedade vive o princípio do desempenho, que provoca modos de vida uniformizados, baseados numa concepção de trabalho e diversão homogêneos. Adorno propôs que o tempo livre provocava uma sensação de liberdade nos indivíduos, mas, na realidade, tratava-se do exercício de uma não liberdade, já que as formas de diversão seguiam à risca os padrões exigidos pelo capital. A partir do método adotado pela própria Teoria Crítica, afirma-se que a presente discussão teórica só se torna efetiva quando aplicada à prática, à sociedade atual.

  7. Influence of the Interaction Between Graphite and Polar Surfaces of ZnO on the Formation of Schottky Contact

    Science.gov (United States)

    Yatskiv, R.; Grym, J.

    2018-03-01

    We show that the interaction between graphite and polar surfaces of ZnO affects electrical properties of graphite/ZnO Schottky junctions. A strong interaction of the Zn-face with the graphite contact causes interface imperfections and results in the formation of laterally inhomogeneous Schottky contacts. On the contrary, high quality Schottky junctions form on the O-face, where the interaction is significantly weaker. Charge transport through the O-face ZnO/graphite junctions is well described by the thermionic emission model in both forward and reverse directions. We further demonstrate that the parameters of the graphite/ZnO Schottky diodes can be significantly improved when a thin layer of ZnO2 forms at the interface between graphite and ZnO after hydrogen peroxide surface treatment.

  8. Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illumination

    Energy Technology Data Exchange (ETDEWEB)

    Kawazu, Takuya; Noda, Takeshi; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, Hiroyuki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan)

    2015-01-12

    We observe lateral currents induced in an n-AlGaAs/GaAs heterojunction channel of Hall bar geometry, when an asymmetric position of the Schottky metal gate is locally irradiated by a near-infrared laser beam. When the left side of the Schottky gate is illuminated with the laser, the lateral current flows from left to right in the two dimensional electron gas (2DEG) channel. In contrast, the right side illumination leads to the current from right to left. The magnitude of the lateral current is almost linearly dependent on the beam position, the current reaching its maximum for the beam at the edge of the Schottky gate. The experimental findings are well explained by a theory based on the current-continuity equation, where the lateral current in the 2DEG channel is driven by the photocurrent which vertically flows from the 2DEG to the Schottky gate.

  9. Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

    Science.gov (United States)

    Kumar, Ashutosh; Heilmann, M.; Latzel, Michael; Kapoor, Raman; Sharma, Intu; Göbelt, M.; Christiansen, Silke H.; Kumar, Vikram; Singh, Rajendra

    2016-01-01

    The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained. PMID:27282258

  10. Electrical properties of Au/perylene-monoimide/p-Si Schottky diode

    International Nuclear Information System (INIS)

    Yüksel, Ö.F.; Tuğluoğlu, N.; Gülveren, B.; Şafak, H.; Kuş, M.

    2013-01-01

    Graphical abstract: In this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier diode. An emphasis is placed on how electrical and interface characteristics like current–voltage (I–V) variation, ideality factor (n), barrier height (Φ B ) and series resistance (R s ) of Au/PMI/p-Si diode structure change with the temperatures between 100 and 300 K. The temperature dependence of barrier height shows that the Schottky barrier height is inhomogeneous in nature at the interface. Such inhomogeneous behavior was explained on the basis of thermionic emission mechanism by assuming the existence of a Gaussian distribution of barrier heights. -- Highlights: •An Au/perylene-monoimide (PMI)/p-Si Schottky diode having an organic interlayer has been fabricated. •I–V characteristics have been investigated over a wide temperature range 100–300 K. •C–V measurements have been analyzed at room temperature. -- Abstract: In this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier diode. We have investigated how electrical and interface characteristics like current–voltage characteristics (I–V), ideality factor (n), barrier height (Φ B ) and series resistance (R s ) of diode change with temperature over a wide range of 100–300 K. Detailed analysis on the electrical properties of structure is performed by assuming the standard thermionic emission (TE) model. Possible mechanisms such as image force lowering, generation–recombination processes and interface states which cause deviations of n values from the unity have been discussed. Cheung–Cheung method is also employed to analysis the current–voltage characteristics and a good agreement is observed between the results. It is shown that the electronic properties of Schottky diode are very sensitive to the modification of perylene-monoimide (PMI) interlayer organic material and also to the temperature. The ideality factor was found to decrease and the barrier

  11. Metal-oxide-semiconductor capacitors and Schottky diodes studied with scanning microwave microscopy at 18 GHz

    Energy Technology Data Exchange (ETDEWEB)

    Kasper, M. [Christian Doppler Laboratory for Nanoscale Methods in Biophysics, Johannes Kepler University of Linz, Gruberstrasse 40, 4020 Linz (Austria); Gramse, G. [Biophysics Institute, Johannes Kepler University of Linz, Gruberstrasse 40, 4020 Linz (Austria); Hoffmann, J. [METAS, National Metrology Institute of Switzerland, Lindenweg 50, 3003 Bern-Wabern (Switzerland); Gaquiere, C. [MC2 technologies, 5 rue du Colibri, 59650 Villeneuve D' ascq (France); Feger, R.; Stelzer, A. [Institute for Communications Engineering and RF-Systems, Johannes Kepler University, Altenberger Str. 69, 4040 Linz (Austria); Smoliner, J. [Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7, 1040 Vienna (Austria); Kienberger, F., E-mail: ferry-kienberger@keysight.com [Keysight Technologies Austria, Measurement Research Lab, Gruberstrasse 40, 4020 Linz (Austria)

    2014-11-14

    We measured the DC and RF impedance characteristics of micrometric metal-oxide-semiconductor (MOS) capacitors and Schottky diodes using scanning microwave microscopy (SMM). The SMM consisting of an atomic force microscopy (AFM) interfaced with a vector network analyser (VNA) was used to measure the reflection S11 coefficient of the metallic MOS and Schottky contact pads at 18 GHz as a function of the tip bias voltage. By controlling the SMM biasing conditions, the AFM tip was used to bias the Schottky contacts between reverse and forward mode. In reverse bias direction, the Schottky contacts showed mostly a change in the imaginary part of the admittance while in forward bias direction the change was mostly in the real part of the admittance. Reference MOS capacitors which are next to the Schottky diodes on the same sample were used to calibrate the SMM S11 data and convert it into capacitance values. Calibrated capacitance between 1–10 fF and 1/C{sup 2} spectroscopy curves were acquired on the different Schottky diodes as a function of the DC bias voltage following a linear behavior. Additionally, measurements were done directly with the AFM-tip in contact with the silicon substrate forming a nanoscale Schottky contact. Similar capacitance-voltage curves were obtained but with smaller values (30–300 aF) due to the corresponding smaller AFM-tip diameter. Calibrated capacitance images of both the MOS and Schottky contacts were acquired with nanoscale resolution at different tip-bias voltages.

  12. Community of Faithful Dissidents. Representations of Anabaptism in Swiss Historical Fiction by Walter Laedrach and Katharina Zimmermann

    Directory of Open Access Journals (Sweden)

    Berit Jany

    2016-10-01

    Full Text Available The twentieth-century Swiss local authors Walter Laedrach and Katharina Zimmermann rediscovered the dark chapter of Swiss history documenting the torture and execution of non-resistant and non-conformist Christians in the Bernese Oberland. The following anal­ysis of the literary representation of these pacifist Anabaptists will identify historiographical sources that served as inspiration to the authors and the contributions their historical no­vels make in Switzerland’s process of coming to terms with its tragic past.

  13. Enhet og Dannelse : En idehistorisk analyse av enhets og dannelses idealet til Bauhaus direktøren Walter Gropius

    OpenAIRE

    Hansen, Britt Hogstad

    2003-01-01

    Sammendrag Denne avhandlingen presenterer et annet bild av den tyske arkitekten og pedagogen Walter Gropius (1883-1969) enn det som har vært vanlig til nå i Norge. Ofte blir han fremstilt som en av funksjonalismens fremste representanter og en som banet vei for den moderne arkitekturen. I denne sammenheng beskrives han ofte som en som brøt fullstendig med alle tidligere tradisjoner. Denne oppgaven vil derimot forsøke å vise at han ikke brøt med tidligere tradisjoner, men at han i høyeste ...

  14. RACISMO PRESENTE NA ANIMAÇÃO “SCRUB ME MAMA WITH A BOGGIE BEAT” DE WALTER LANTZ (1941)

    OpenAIRE

    Julio Geraldo Carvalho de Jesus; Davi Alexandre Pistila

    2017-01-01

    As Animações são fontes interessantes de serem exploradas pela perspectiva histórica, uma vez que trazem questões impostas pelo contexto da produção e podem ser utilizadas como meio de transmitir conhecimentos e ideologias. O presente artigo faz uma reflexão acerca do tema do racismo nas animações dirigidas e produzidas por Walter Lantz, no ano de 1941, tomando como base o cartoon “Scrube Me Mama with a Boogie Beat”, distribuído pela Universal Studios, e reexibido no ano de 1948. Apesar do ra...

  15. Out-of-plane strain and electric field tunable electronic properties and Schottky contact of graphene/antimonene heterostructure

    Science.gov (United States)

    Phuc, Huynh V.; Hieu, Nguyen N.; Hoi, Bui D.; Phuong, Le T. T.; Hieu, Nguyen V.; Nguyen, Chuong V.

    2017-12-01

    In this paper, the electronic properties of graphene/monolayer antimonene (G/m-Sb) heterostructure have been studied using the density functional theory (DFT). The effects of out-of-plane strain (interlayer coupling) and electric field on the electronic properties and Schottky contact of the G/m-Sb heterostructure are also investigated. The results show that graphene is bound to m-Sb layer by a weak van-der-Waals interaction with the interlayer distance of 3.50 Å and the binding energy per carbon atom of -39.62 meV. We find that the n-type Schottky contact is formed at the G/m-Sb heterostructure with the Schottky barrier height (SBH) of 0.60 eV. By varying the interlayer distance between graphene and the m-Sb layer we can change the n-type and p-type SBH at the G/m-Sb heterostructure. Especially, we find the transformation from n-type to p-type Schottky contact with decreasing the interlayer distance. Furthermore, the SBH and the Schottky contact could be controlled by applying the perpendicular electric field. With the positive electric field, electrons can easily transfer from m-Sb to graphene layer, leading to the transition from n-type to p-type Schottky contact.

  16. Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

    International Nuclear Information System (INIS)

    Lü Yuan-Jie; Feng Zhi-Hong; Gu Guo-Dong; Dun Shao-Bo; Yin Jia-Yun; Han Ting-Ting; Cai Shu-Jun; Lin Zhao-Jun

    2014-01-01

    Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current—voltage and capacitance—voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger's and Poisson's equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  17. Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

    International Nuclear Information System (INIS)

    Čermák, Jan; Rezek, Bohuslav; Koide, Yasuo; Takeuchi, Daisuke

    2014-01-01

    Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent

  18. Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

    Science.gov (United States)

    Čermák, Jan; Koide, Yasuo; Takeuchi, Daisuke; Rezek, Bohuslav

    2014-02-01

    Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

  19. A graphene barristor using nitrogen profile controlled ZnO Schottky contacts.

    Science.gov (United States)

    Hwang, Hyeon Jun; Chang, Kyoung Eun; Yoo, Won Beom; Shim, Chang Hoo; Lee, Sang Kyung; Yang, Jin Ho; Kim, So-Young; Lee, Yongsu; Cho, Chunhum; Lee, Byoung Hun

    2017-02-16

    We have successfully demonstrated a graphene-ZnO:N Schottky barristor. The barrier height between graphene and ZnO:N could be modulated by a buried gate electrode in the range of 0.5-0.73 eV, and an on-off ratio of up to 10 7 was achieved. By using a nitrogen-doped ZnO film as a Schottky contact material, the stability problem of previously reported graphene barristors could be greatly alleviated and a facile route to build a top-down processed graphene barristor was realized with a very low heat cycle. This device will be instrumental when implementing logic functions in systems requiring high-performance logic devices fabricated with a low temperature fabrication process such as back-end integrated logic devices or flexible devices on soft substrates.

  20. Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions.

    Science.gov (United States)

    Kunc, Jan; Hu, Yike; Palmer, James; Guo, Zelei; Hankinson, John; Gamal, Salah H; Berger, Claire; de Heer, Walt A

    2014-09-10

    A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared to conventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(0001̅) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

  1. Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages

    CERN Document Server

    Kum, B H; Shin, M W; Park, J D

    1999-01-01

    This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si sub x B sub y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm sup 2 at a forward voltage of 2 V. The breakdown of the Pt. 4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

  2. Operation and scalability of dopant-segregated Schottky barrier MOSFETs with recessed channels

    International Nuclear Information System (INIS)

    Shih, Chun-Hsing; Hsia, Jui-Kai

    2013-01-01

    Recessed channels were used in scaled dopant-segregated Schottky barrier MOSFETs (DS-SBMOS) to control the severe short-channel effect. The physical operation and device scalability of the DS-SBMOS resulting from the presence of recessed channels and associated gate-corners are elucidated. The coupling of Schottky and gate-corner barriers has a key function in determining the on–off switching and drain current. The gate-corner barriers divide the channel into three regions for protection from the drain penetration field. To prevent resistive degradations in the drive current, an alternative asymmetric recessed channel (ARC) without a source-side gate-corner is proposed to simultaneously optimize both the short-channel effect and drive current in the scaled DS-SBMOS. By employing the proposed ARC architecture, the DS-SBMOS devices can be successfully scaled down, making them promising candidates for next-generation CMOS devices. (paper)

  3. Model and observations of Schottky-noise suppression in a cold heavy-ion beam.

    Science.gov (United States)

    Danared, H; Källberg, A; Rensfelt, K-G; Simonsson, A

    2002-04-29

    Some years ago it was found at GSI in Darmstadt that the momentum spread of electron-cooled beams of highly charged ions dropped abruptly to very low values when the particle number decreased to 10 000 or less. This has been interpreted as an ordering of the ions, such that they line up after one another in the ring. We report observations of similar transitions at CRYRING, including an accompanying drop in Schottky-noise power. We also introduce a model of the ordered beam from which the Schottky-noise power can be calculated numerically. The good agreement between the model calculation and the experimental data is seen as evidence for a spatial ordering of the ions.

  4. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Xin, Qian; Yan, Linlong; Luo, Yi [School of Physics, Shandong University, Jinan 250100 (China); Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Physics, Shandong University, Jinan 250100 (China); School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2015-03-16

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  5. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    International Nuclear Information System (INIS)

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-01-01

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate

  6. High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics

    Directory of Open Access Journals (Sweden)

    Young Ki Hong

    2016-05-01

    Full Text Available Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS2 thin-film transistor (TFT, which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS2 TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS2 and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range.

  7. High performance and transparent multilayer MoS{sub 2} transistors: Tuning Schottky barrier characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Young Ki; Kwon, Junyeon; Hong, Seongin; Song, Won Geun; Liu, Na; Omkaram, Inturu; Kim, Sunkook, E-mail: kimskcnt@gmail.com, E-mail: ohms@keti.re.kr [Multi-Functional Bio/Nano Lab., Kyung Hee University, Gyeonggi 446-701 (Korea, Republic of); Yoo, Geonwook; Yoo, Byungwook; Oh, Min Suk, E-mail: kimskcnt@gmail.com, E-mail: ohms@keti.re.kr [Display Convergence Research Center, Korea Electronics Technology Institute, Gyeonggi 463-816 (Korea, Republic of); Ju, Sanghyun [Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do 443-760 (Korea, Republic of)

    2016-05-15

    Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS{sub 2}) thin-film transistor (TFT), which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS{sub 2} TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS{sub 2} and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range.

  8. Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study

    International Nuclear Information System (INIS)

    Zhong, Haijian; Liu, Zhenghui; Xu, Gengzhao; Shi, Lin; Fan, Yingmin; Yang, Hui; Xu, Ke; Wang, Jianfeng; Ren, Guoqiang

    2014-01-01

    Graphene has been proposed as a material for semiconductor electronic and optoelectronic devices. Understanding the charge transport mechanisms of graphene/semiconductor Schottky barriers will be crucial for future applications. Here, we report a theoretical model to describe the transport mechanisms at the interface of graphene and semiconductors based on conventional semiconductor Schottky theory and a floating Fermi level of graphene. The contact barrier heights can be estimated through this model and be close to the values obtained from the experiments, which are lower than those of the metal/semiconductor contacts. A detailed analysis reveals that the barrier heights are as the function of the interface separations and dielectric constants, and are influenced by the interfacial states of semiconductors. Our calculations show how this behavior of lowering barrier heights arises from the Fermi level shift of graphene induced by the charge transfer owing to the unique linear electronic structure

  9. A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

    International Nuclear Information System (INIS)

    Wang Ying; Jiao Wen-Li; Hu Hai-Fan; Liu Yun-Tao; Cao Fei

    2012-01-01

    An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor (UMOSFET) integrated with a Schottky rectifier is proposed. In this device, a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET. Specific on-resistances of 7.7 mΩ·mm 2 and 6.5 mΩ·mm 2 for the gate bias voltages of 5 V and 10 V are achieved, respectively, and the breakdown voltage is 61 V. The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET. (condensed matter: structural, mechanical, and thermal properties)

  10. Study of polarization phenomena in Schottky CdTe diodes using infrared light illumination

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Goro, E-mail: gsato@astro.isas.jaxa.jp [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Fukuyama, Taro [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Watanabe, Shin; Ikeda, Hirokazu; Ohta, Masayuki; Ishikawa, Shin' nosuke [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Takahashi, Tadayuki [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Shiraki, Hiroyuki; Ohno, Ryoichi [ACRORAD Co., Ltd., 13-23 Suzaki, Uruma, Okinawa 904-2234 (Japan)

    2011-10-01

    Schottky CdTe diode detectors suffer from a polarization phenomenon, which is characterized by degradation of the spectral properties over time following exposure to high bias voltage. This is considered attributable to charge accumulation at deep acceptor levels. A Schottky CdTe diode was illuminated with an infrared light for a certain period during a bias operation, and two opposite behaviors emerged. The detector showed a recovery when illuminated after the bias-induced polarization had completely progressed. Conversely, when the detector was illuminated before the emergence of bias-induced polarization, the degradation of the spectral properties was accelerated. Interpretation of these effects and discussion on the energy level of deep acceptors are presented.

  11. New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application

    Directory of Open Access Journals (Sweden)

    V. G. Ivanov

    2011-01-01

    Full Text Available The results of an experimental investigation into a new type of VLWIR detector based on hot electron gas emission and architecture of the detector are presented and discussed. The detectors (further referred to as HEGED take advantage of the thermionic emission current change effect in a semiconductor diode with a Schottky barrier (SB as a result of the direct transfer of the absorbed radiation energy to the system of electronic gas in the quasimetallic layer of the barrier. The possibility of detecting radiation having the energy of quantums less than the height of the Schottky diode potential barrier and of obtaining a substantial improvement of a cutoff wavelength to VLWIR of the PtSi/Si detector has been demonstrated. The complementary contribution of two physical mechanisms of emanation detection—“quantum” and hot electrons gas emission—has allowed the creation of a superwideband IR detector using standard silicon technology.

  12. Fabrication of polymer Schottky diode with Al-PANI/MWCNT-Au structure

    Directory of Open Access Journals (Sweden)

    A Hajibadali

    2014-11-01

    Full Text Available In this research, Schottky diode with Al-PANI/MWCNT-Au structure was fabricated using spin coating of composite polymer and physical vapor deposition of metals. For this purpose, a thin layer of gold was coated on glass and then composite of polyaniline/multi-walled carbon nanotube was synthesized and spin-coated on gold layer. Finally, a thin layer of aluminum was coated on polymer layer. The current-voltage characteristics of diode were studied and found that I-V curve is nonlinear and nonsymmetrical, showing rectifying behavior. I-V characteristics plotted on a logarithmic scale for Schottky diode showed two distinct power law regions. At lower voltages, the mechanism follows Ohm’s Law and at higher voltages, the mechanism is consistent with space charge limited conduction (SCLC emission. The parameters extracted from I-V characteristics were also calculated.

  13. Film thickness degradation of Au/GaN Schottky contact characteristics

    International Nuclear Information System (INIS)

    Wang, K.; Wang, R.X.; Fung, S.; Beling, C.D.; Chen, X.D.; Huang, Y.; Li, S.; Xu, S.J.; Gong, M.

    2005-01-01

    Electrical characteristics of Au/n-GaN Schottky contacts with different Au film thicknesses up to 1300 A, have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Results show a steady decrease in the quality of the Schottky diodes for increasing Au film thickness. I-V measurements indicate that thin ( 500 A). Depth profiling Auger electron spectroscopy (AES) shows that the width of the Au/GaN junction interface increases with increasing Au thickness, suggesting considerable inter-mixing of Au, Ga and N. The results have been interpreted in terms of Ga out-diffusion from the GaN giving rise to gallium vacancies that in turn act as sites for electron-hole pair generation within the depletion region. The study supports the recent suggestion that gallium vacancies associated with threaded dislocations are playing an important role in junction breakdown

  14. The effects of temperature on Schottky diode barrier height and evidence of multiple barrier

    International Nuclear Information System (INIS)

    Rabah, K.V.O.

    1994-07-01

    Experimental study of Capacitance-Voltage-Temperature (C-V-T) plots, Current-Voltage-Temperature (I-V-T) characteristics have been undertaken in order to determine the height of the Schottky barrier. The results of the barrier height obtained by the above two methods were found to differ as well as vary with temperature change. In view of this discrepancy in barrier height values, two further experiments were performed: one on activation energy (I-T) plots and the other on pulsed (I-V-T) characteristics, and the results were found to show a similar trend. The Schottky diode studied was a 30CP040. (author). 23 refs, 9 figs, 3 tabs

  15. Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

    Energy Technology Data Exchange (ETDEWEB)

    Čermák, Jan, E-mail: cermakj@fzu.cz; Rezek, Bohuslav [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 16200 Prague 6 (Czech Republic); Koide, Yasuo [Sensor Materials Center, National Institute for Material Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan); Takeuchi, Daisuke [Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba 305-8568 (Japan)

    2014-02-07

    Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

  16. Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode

    International Nuclear Information System (INIS)

    Chen Fengping; Zhang Yuming; Lue Hongliang; Zhang Yimen; Guo Hui; Guo Xin

    2011-01-01

    4H-SiC junction barrier Schottky (JBS) diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently, and the other is processed by depositing a Schottky metal multi-layer on the whole anode. The reverse performances are compared to find the influences of these factors. The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage, and with independent P-type ohmic contact manufacturing, the reverse performance of 4H-SiC JBS diodes can be improved effectively. Furthermore, the P-type ohmic contact is studied in this work. (semiconductor devices)

  17. Faculty of health sciences, walter sisulu university: training doctors from and for rural South african communities.

    Science.gov (United States)

    Iputo, Jehu E

    2008-10-01

    Introduction The South African health system has disturbing inequalities, namely few black doctors, a wide divide between urban and rural sectors, and also between private and public services. Most medical training programs in the country consider only applicants with higher-grade preparation in mathematics and physical science, while most secondary schools in black communities have limited capacity to teach these subjects and offer them at standard grade level. The Faculty of Health Sciences at Walter Sisulu University (WSU) was established in 1985 to help address these inequities and to produce physicians capable of providing quality health care in rural South African communities. Intervention Access to the physician training program was broadened by admitting students who obtained at least Grade C (60%) in mathematics and physical science at standard grade, and who demonstrated appropriate personal attributes. An innovative curriculum, combining problem-based learning with community-based education (PBL/CBE) in small tutorial group settings, was also adopted. This approach was aimed at educating and graduating a broader cohort of students, while training future doctors to identify, analyze, and treat health problems in the rural South African context. Outcomes To date, 745 doctors (72% black Africans) have graduated from the program, and 511 students (83% black Africans) are currently enrolled. After the PBL/CBE curriculum was adopted, the attrition rate for black students dropped from 23% to 80%, and the proportion of students graduating within the minimum period rose from 55% to >70%. Many graduates are still completing internships or post-graduate training, but preliminary research shows that 36% percent of graduates practice in small towns and rural settings. Further research is underway to evaluate the impact of their training on health services in rural Eastern Cape Province and elsewhere in South Africa. Conclusions The WSU program increased access to

  18. Effect of aromatic SAMs molecules on graphene/silicon schottky diode performance

    OpenAIRE

    Yağmurcukardeş, Nesli; Aydın, Hasan; Can, Mustafa; Yanılmaz, Alper; Mermer, Ömer; Okur, Salih; Selamet, Yusuf

    2016-01-01

    Au/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using 5-[(3-methylphenyl)(phenyl) amino]isophthalic acid (MePIFA) and 5-(diphenyl)amino]isophthalic acid (DPIFA) aromatic self-assembled monolayer (SAM) molecules. The surface morphologies of modified and non-modified films were investigated by atomic force microscopy and scanning electron ...

  19. Characterization and Reliability of Vertical N-Type Gallium Nitride Schottky Contacts

    Science.gov (United States)

    2016-09-01

    ACKNOWLEDGMENTS Foremost, I would like to thank my wife, Melissa, with whom I have three wonderful children. Without her endless love , unwavering...conducting research in the lab and studying in the library, she cared for our children and created a loving home for our family. Her strength, passion...Online]. Available: http://ecee.colorado.edu/~bart/book/book/title.htm 78 [12] R. T. Tung, “The physics and chemistry of the Schottky barrier

  20. Electrical characterisation of ruthenium Schottky contacts on n-Ge (1 0 0)

    Energy Technology Data Exchange (ETDEWEB)

    Chawanda, Albert, E-mail: albert.chawanda@up.ac.za [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Department of Physics, Midlands State University, Bag 9055, Gweru (Zimbabwe); Nyamhere, Cloud [Department of Physics, Nelson Mandela Metropolitan University, Box 7700, Port Elizabeth 6031 (South Africa); Auret, Francois D.; Nel, Jacqueline M.; Mtangi, Wilbert; Diale, Mmatsae [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa)

    2012-05-15

    Ruthenium (Ru) Schottky contacts were fabricated on n-Ge (1 0 0) by electron beam deposition. Current-voltage (I-V), deep level transient spectroscopy (DLTS), and Laplace-DLTS techniques were used to characterise the as-deposited and annealed Ru/n-Ge (1 0 0) Schottky contacts. The variation of the electrical properties of the Ru samples annealed between 25 Degree-Sign C and 575 Degree-Sign C indicates the formation of two phases of ruthenium germanide. After Ru Schottky contacts fabrication, an electron trap at 0.38 eV below the conduction band with capture cross section of 1.0 Multiplication-Sign 10{sup -14} cm{sup -2} is the only detectable electron trap. The hole traps at 0.09, 0.15, 0.27 and 0.30 eV above the valence band with capture cross sections of 7.8 Multiplication-Sign 10{sup -13} cm{sup -2}, 7.1 Multiplication-Sign 10{sup -13} cm{sup -2}, 2.4 Multiplication-Sign 10{sup -13} cm{sup -2} and 6.2 Multiplication-Sign 10{sup -13} cm{sup -2}, respectively, were observed in the as-deposited Ru Schottky contacts. The hole trap H(0.30) is the prominent single acceptor level of the E-centre, and H(0.09) is the third charge state of the E-centre. H(0.27) shows some reverse annealing and reaches a maximum concentration at 225 Degree-Sign C and anneals out after 350 Degree-Sign C. This trap is strongly believed to be V-Sb{sub 2} complex formed from the annealing of V-Sb defect centre.

  1. Electrical degradation of double-Schottky barrier in ZnO varistors

    Energy Technology Data Exchange (ETDEWEB)

    He, Jinliang, E-mail: hejl@tsinghua.edu.cn; Cheng, Chenlu; Hu, Jun [The State Key Lab of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084 (China)

    2016-03-15

    Researches on electrical degradation of double-Schottky barrier in ZnO varistors are reviewed, aimed at the constitution of a full picture of universal degradation mechanism within the perspective of defect. Recent advances in study of ZnO materials by atomic-scale first-principles calculations are partly included and discussed, which brings to our attention distinct cognition on the native point defects and their profound impact on degradation.

  2. Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

    Science.gov (United States)

    Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

    2015-07-01

    The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

  3. Schottky-Gated Probe-Free ZnO Nanowire Biosensor

    KAUST Repository

    Yeh, Ping-Hung

    2009-12-28

    (Figure Presented) A nanowire-based nanosensor for detecting biologically and chemically charged molecules that is probe-free and highly sensitive is demonstrated. The device relies on the nonsymmetrical Schottky contact under reverse bias (see figure) and is much more sensitive than the device based on the symmetric ohmic contact. This approach serves as a guideline for designing more practical chemical and biochemical sensors. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA.

  4. Tunable Schottky diodes fabricated from crossed electrospun SnO{sub 2}/PEDOT-PSSA nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Carrasquillo, Katherine V. [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00792 (Puerto Rico); Pinto, Nicholas J., E-mail: nicholas.pinto@upr.edu [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00792 (Puerto Rico)

    2012-06-25

    Graphical abstract: Crossed SnO{sub 2}/PEDOT-PSSA nanoribbon Schottky diodes. Highlight: Black-Right-Pointing-Pointer An inexpensive electrospinning technique is used to fabricate crossed nanoribbons of n-doped tin oxide and p-PEDOT. Black-Right-Pointing-Pointer Each intersection is a localized Schottky diode that is completely exposed to the environment after electrodes deposition. Black-Right-Pointing-Pointer This makes it useful as a gas and light sensor. Black-Right-Pointing-Pointer In addition, the ability to tune the diode parameters via a back gate truly makes this device multifunctional. Black-Right-Pointing-Pointer A half wave rectifier has been demonstrated with this device under UV illumination. - Abstract: Schottky diodes have been fabricated on doped Si/SiO{sub 2} substrates in air, by simply crossing individual electrospun tin oxide (SnO{sub 2}) and poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) (PEDOT-PSSA) nanoribbons. The conductivity of PEDOT-PSSA was {approx}6 S/cm with no observable field effect, while SnO{sub 2} exhibited n-doped field effect behavior with a charge mobility of {approx}3.1 cm{sup 2}/V-s. The diodes operate in air or in vacuum, under ambient illumination or in the dark, with low turn-on voltages and device parameters that are tunable via a back gate bias or a UV light source. Their unique design involves a highly localized active region that is completely exposed to the surrounding environment, making them potentially attractive for use as sensors. The standard thermionic emission model of a Schottky junction was applied to analyze the forward bias diode characteristics and was successfully tested as a half wave rectifier.

  5. Far-ir heterodyne radiometric measurements with quasioptical Schottky diode mixers

    International Nuclear Information System (INIS)

    Fetterman, H.R.; Tannenwald, P.E.; Clifton, B.J.; Parker, C.D.; Fitzgerald, W.D.; Erickson, N.R.

    1978-01-01

    We have made heterodyne radiometric measurements with GaAs Schottky diode mixers, mounted in a corner-reflector configuration, over the spectral range 170 μm to 1 mm. At 400 μm, system noise temperatures of 9700 K DSB (NEP=1.4 x 10 - 19 W/Hz) and mixer noise temperatures of 5900 K have been achieved. This same quasioptical mixer has also been used to generate 10 - 7 W of tunable radiation suitable for spectroscopic applications

  6. Si and SiC Schottky diodes in smart power circuits: a comparative study by I-V-T and C-V measurements

    Energy Technology Data Exchange (ETDEWEB)

    Hadzi-Vukovic, J [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria); Jevtic, M [Institute for Physics, Pregrevica 118, 11080 Zemun (Serbia and Montenegro); Rothleitner, H [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria); Croce, P Del [Infineon Technologies, Siemensstrasse 2, 9500 Villach (Austria)

    2005-01-01

    In this paper we analyze a possibility of manufacturing and implementation of Schottky diodes in the smart power circuits. Three different Schottky diodes, in three different technologies, are realized in Si and SiC processes. The electrical characterizations with I-V-T and C-V measurements are done for all structures. It is shown that Si based Schottky diodes also are suitable to be integrated in the typical smart power circuits.

  7. Si and SiC Schottky diodes in smart power circuits: a comparative study by I-V-T and C-V measurements

    International Nuclear Information System (INIS)

    Hadzi-Vukovic, J; Jevtic, M; Rothleitner, H; Croce, P Del

    2005-01-01

    In this paper we analyze a possibility of manufacturing and implementation of Schottky diodes in the smart power circuits. Three different Schottky diodes, in three different technologies, are realized in Si and SiC processes. The electrical characterizations with I-V-T and C-V measurements are done for all structures. It is shown that Si based Schottky diodes also are suitable to be integrated in the typical smart power circuits

  8. Fabrication and characterization of Au/n-CdTe Schottky barrier under illumination and dark

    Science.gov (United States)

    Bera, Swades Ranjan; Saha, Satyajit

    2018-04-01

    CdTe nanoparticles have been grown by chemical reduction method using EDA as capping agent. These are used to fabricate Schottky barrier in a simple cost-effective way at room temperature. The grown nanoparticles are structurally characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM). The optical properties of nano CdTe is characterized by UV-Vis absorption spectra, PL spectra. The band gap of the CdTe nanoparticles is increased as compared to CdTe bulk form indicating there is blue shift. The increase of band gap is due to quantum confinement. Photoluminescence spectra shows peak which corresponds to emission from surface state. CdTe nanofilm is grown on ITO coated glass substrate by dipping it on toluene containing dispersed CdTe nanoparticles. Schottky barrier of Au/n-CdTe is fabricated on ITO coated glass by vacuum deposition of gold. I- V and C- V characteristics of Au/n-CdTe Schottky barrier junction have been studied under dark and light condition. It is found that these characteristics are influenced by surface or interface traps. The values of barrier height, ideality factor, donor concentration and series resistance are obtained from the reverse bias capacitance-voltage measurements.

  9. Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.

    Science.gov (United States)

    Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li

    2016-04-27

    The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4-0.7 eV to 0.2-0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.

  10. Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

    Science.gov (United States)

    Di Bartolomeo, Antonio; Giubileo, Filippo; Luongo, Giuseppe; Iemmo, Laura; Martucciello, Nadia; Niu, Gang; Fraschke, Mirko; Skibitzki, Oliver; Schroeder, Thomas; Lupina, Grzegorz

    2017-03-01

    We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 {{A}} {{{W}}}-1 for white LED light at 3 {{mW}} {{{cm}}}-2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters, and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. We also introduce a new phenomenological graphene/semiconductor diode equation, which well describes the experimental I-V characteristics both in forward and reverse bias.

  11. Reducing the Schottky barrier between few-layer MoTe2 and gold

    Science.gov (United States)

    Qi, Dianyu; Wang, Qixing; Han, Cheng; Jiang, Jizhou; Zheng, Yujie; Chen, Wei; Zhang, Wenjing; Thye Shen Wee, Andrew

    2017-12-01

    Schottky barriers greatly influence the performance of optoelectronic devices. Schottky barriers can be reduced by harnessing the polymorphism of 2D metal transition dichalcogenides, since both semiconducting and metallic phases exist. However, high energy, high temperature or chemicals are normally required for phase transformation, or the processes are complex. In this work, stable low-resistance contacts between few layer MoTe2 flakes and gold electrodes are achieved by a simple thermal annealing treatment at low temperature (200-400 °C). The resulting Schottky barrier height of the annealed MoTe2/Au interface is low (~23 meV). A new Raman A g mode of the 1T‧ metallic phase of MoTe2 on gold electrode is observed, indicating that the low-resistance contact is due to the phase transition of 2H-MoTe2. The gold substrate plays an important role in the transformation, and a higher gold surface roughness increases the transformation rate. With this method, the mobility and ON-state current of the MoTe2 transistor increase by ~3-4 orders of magnitude, the photocurrent of vertically stacked graphene/MoTe2/Au device increases ~300%, and the response time decreases by ~20%.

  12. Irradiation effects on electrical properties of DNA solution/Al Schottky diodes

    Science.gov (United States)

    Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Iwamoto, Mitsumasa

    2018-04-01

    Deoxyribonucleic acid (DNA) has emerged as one of the most exciting organic material and as such extensively studied as a smart electronic material since the last few decades. DNA molecules have been reported to be utilized in the fabrication of small-scaled sensors and devices. In this current work, the effect of alpha radiation on the electrical properties of an Al/DNA/Al device using DNA solution was studied. It was observed that the carrier transport was governed by electrical interface properties at the Al-DNA interface. Current ( I)-voltage ( V) curves were analyzed by employing the interface limited Schottky current equations, i.e., conventional and Cheung and Cheung's models. Schottky parameters such as ideality factor, barrier height and series resistance were also determined. The extracted barrier height of the Schottky contact before and after radiation was calculated as 0.7845, 0.7877, 0.7948 and 0.7874 eV for the non-radiated, 12, 24 and 36 mGy, respectively. Series resistance of the structure was found to decline with the increase in the irradiation, which was due to the increase in the free radical root effects in charge carriers in the DNA solution. Results pertaining to the electronic profiles obtained in this work may provide a better understanding for the development of precise and rapid radiation sensors using DNA solution.

  13. Impact of substrate off-angle on the m-plane GaN Schottky diodes

    Science.gov (United States)

    Yamada, Hisashi; Chonan, Hiroshi; Takahashi, Tokio; Shimizu, Mitsuaki

    2018-04-01

    We investigated the effects of the substrate off-angle on the m-plane GaN Schottky diodes. GaN epitaxial layers were grown by metal-organic chemical vapor deposition on m-plane GaN substrates having an off-angle of 0.1, 1.1, 1.7, or 5.1° toward [000\\bar{1}]. The surface of the GaN epitaxial layers on the 0.1°-off substrate consisted of pyramidal hillocks and contained oxygen (>1017 cm-3) and carbon (>1016 cm-3) impurities. The residual carbon and oxygen impurities decreased to current of the 0.1°-off m-plane GaN Schottky diodes originated from the +c facet of the pyramidal hillocks. The leakage current was efficiently suppressed through the use of an off-angle that was observed to be greater than 1.1°. The off-angle of the m-plane GaN substrate is critical in obtaining high-performance Schottky diodes.

  14. Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide

    Science.gov (United States)

    Gora, V. E.; Chawanda, A.; Nyamhere, C.; Auret, F. D.; Mazunga, F.; Jaure, T.; Chibaya, B.; Omotoso, E.; Danga, H. T.; Tunhuma, S. M.

    2018-04-01

    We have investigated the current-voltage (I-V) characteristics of nickel (Ni), cobalt (Co), tungsten (W) and palladium (Pd) Schottky contacts on n-type 4H-SiC in the 300-800 K temperature range. Results extracted from I-V measurements of Schottky barrier diodes showed that barrier height (ФBo) and ideality factor (n) were strongly dependent on temperature. Schottky barrier heights for contacts of all the metals showed an increase with temperature between 300 K and 800 K. This was attributed to barrier inhomogeneities at the interface between the metal and the semiconductor, which resulted in a distribution of barrier heights at the interface. Ideality factors of Ni, Co and Pd decreased from 1.6 to 1.0 and for W the ideality factor decreased from 1.1 to 1.0 when the temperature was increased from 300 K to 800 K respectively. The device parameters were compared to assess advantages and disadvantages of the metals for envisaged applications.

  15. InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

    Science.gov (United States)

    Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.

    1992-01-01

    This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

  16. 670-GHz Schottky Diode-Based Subharmonic Mixer with CPW Circuits and 70-GHz IF

    Science.gov (United States)

    Chattopadhyay, Goutam; Schlecht, Erich T.; Lee, Choonsup; Lin, Robert H.; Gill, John J.; Mehdi, Imran; Sin, Seth; Deal, William; Loi, Kwok K.; Nam, Peta; hide

    2012-01-01

    GaAs-based, sub-harmonically pumped Schottky diode mixers offer a number of advantages for array implementation in a heterodyne receiver system. Since the radio frequency (RF) and local oscillator (LO) signals are far apart, system design becomes much simpler. A proprietary planar GaAs Schottky diode process was developed that results in very low parasitic anodes that have cutoff frequencies in the tens of terahertz. This technology enables robust implementation of monolithic mixer and frequency multiplier circuits well into the terahertz frequency range. Using optical and e-beam lithography, and conventional epitaxial layer design with innovative usage of GaAs membranes and metal beam leads, high-performance terahertz circuits can be designed with high fidelity. All of these mixers use metal waveguide structures for housing. Metal machined structures for RF and LO coupling hamper these mixers to be integrated in multi-pixel heterodyne array receivers for spectroscopic and imaging applications. Moreover, the recent developments of terahertz transistors on InP substrate provide an opportunity, for the first time, to have integrated amplifiers followed by Schottky diode mixers in a heterodyne receiver at these frequencies. Since the amplifiers are developed on a planar architecture to facilitate multi-pixel array implementation, it is quite important to find alternative architecture to waveguide-based mixers.

  17. Interdigitated Pt-GaN Schottky interfaces for high-temperature soot-particulate sensing

    Science.gov (United States)

    So, Hongyun; Hou, Minmin; Jain, Sambhav R.; Lim, Jongwoo; Senesky, Debbie G.

    2016-04-01

    A microscale soot-particulate sensor using interdigitated platinum-gallium nitride (Pt-GaN) Schottky interfaces was developed to monitor fine soot particles within high-temperature environments (e.g., combustion exhausts and flues). Upon exposure to soot particles (30 to 50 nm in diameter) from an experimental chimney, an increased current (∼43.6%) is observed through the back-to-back Schottky contact to n-type GaN. This is attributed to a reduction in the effective Schottky barrier height (SBH) of ∼10 meV due to the electric field from the charged soot particles in the depletion region and exposed GaN surface. Furthermore, the microfabricated sensor was shown to recover sensitivity and regenerate the sensing response (∼11 meV SBH reduction) after exposure to temperature as high as 550 °C. This study supports the feasibility of a simple and reliable soot sensor to meet the increasing market demand for particulate matter sensing in harsh environments.

  18. Effect of hydrogen on ZnO films and Au/ZnO Schottky contacts

    International Nuclear Information System (INIS)

    Tsiarapas, C; Girginoudi, D; Georgoulas, N

    2014-01-01

    The structural, optical and electrical properties of ZnO films for different amounts of incorporated hydrogen (H), as well as the electrical characteristics of Au Schottky contacts based on these ZnO layers have been investigated. The films were deposited with the dc-magnetron sputtering technique, varying the H flow rate in the Ar/H sputtering gas. We found a significant improvement of the crystallinity (as obtained from x-ray diffraction spectra), Hall mobility and resistivity as the H concentration per vol. [H 2 ] (during deposition) increases from 0% to 33.3%, which is followed by degradation for further [H 2 ] increase. A high dependence of the carrier mobility on the grain size is also noted. The Schottky diodes were characterized through current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. In correlation with the basic film properties, we obtained the best results for the Schottky diodes with [H 2 ] = 33.3%, in terms of higher rectification ratio, lower ideality factor (η) and series resistance (R s ). Both the electron concentration n and the ionized donors' concentration N D (obtained from C–V curves) increase constantly with [H 2 ] increase, and that seems to be consistent with our suggestion that H acts as a donor in ZnO. (paper)

  19. Very low Schottky barrier height at carbon nanotube and silicon carbide interface

    Energy Technology Data Exchange (ETDEWEB)

    Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Suzuki, Kazuma; Shibuya, Megumi; Lee, Chih-Yu [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Masuda, Yoshiho; Tomatsu, Naoya; Norimatsu, Wataru; Kusunoki, Michiko [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Hiraiwa, Atsushi [Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Kawarada, Hiroshi [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

    2015-03-23

    Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

  20. Effect of inhomogeneous Schottky barrier height of SnO2 nanowires device

    Science.gov (United States)

    Amorim, Cleber A.; Bernardo, Eric P.; Leite, Edson R.; Chiquito, Adenilson J.

    2018-05-01

    The current–voltage (I–V) characteristics of metal–semiconductor junction (Au–Ni/SnO2/Au–Ni) Schottky barrier in SnO2 nanowires were investigated over a wide temperature range. By using the Schottky–Mott model, the zero bias barrier height Φ B was estimated from I–V characteristics, and it was found to increase with increasing temperature; on the other hand the ideality factor (n) was found to decrease with increasing temperature. The variation in the Schottky barrier and n was attributed to the spatial inhomogeneity of the Schottky barrier height. The experimental I–V characteristics exhibited a Gaussian distribution having mean barrier heights {\\overline{{{Φ }}}}B of 0.30 eV and standard deviation σ s of 60 meV. Additionally, the Richardson modified constant was obtained to be 70 A cm‑2 K‑2, leading to an effective mass of 0.58m 0. Consequently, the temperature dependence of I–V characteristics of the SnO2 nanowire devices can be successfully explained on the Schottky–Mott theory framework taking into account a Gaussian distribution of barrier heights.

  1. Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height

    International Nuclear Information System (INIS)

    Guo-Ping, Ru; Rong, Yu; Yu-Long, Jiang; Gang, Ruan

    2010-01-01

    This paper investigates the thermal activation behaviour of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height by numerical simulation. The analytical Gaussian distribution model predicted that the I-V-T curves may intersect with the possibility of the negative thermal activation of current, but may be contradictory to the thermionic emission mechanism in a Schottky diode. It shows that the cause of the unphysical phenomenon is related to the incorrect calculation of current across very low barriers. It proposes that junction voltage V j , excluding the voltage drop across series resistance from the external bias, is a crucial parameter for correct calculation of the current across very low barriers. For correctly employing the thermionic emission model, V j needs to be smaller than the barrier height ø. With proper scheme of series resistance connection where the condition of V j > ø is guaranteed, I-V-T curves of an inhomogeneous Schottky diode with a Gaussian distribution of barrier height have been simulated, which demonstrate normal thermal activation. Although the calculated results exclude the intersecting possibility of I-V-T curves with an assumption of temperature-independent series resistance, it shows that the intersecting is possible when the series resistance has a positive temperature coefficient. Finally, the comparison of our numerical and analytical results indicates that the analytical Gaussian distribution model is valid and accurate in analysing I-V-T curves only for small barrier height inhomogeneity. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. External electric field effects on Schottky barrier at Gd3N@C80/Au interface

    Science.gov (United States)

    Onishi, Koichi; Nakashima, Fumihiro; Jin, Ge; Eto, Daichi; Hattori, Hayami; Miyoshi, Noriko; Kirimoto, Kenta; Sun, Yong

    2017-08-01

    The effects of the external electric field on the height of the Schottky barrier at the Gd3N@C80/Au interface were studied by measuring current-voltage characteristics at various temperatures from 200 K to 450 K. The Gd3N@C80 sample with the conduction/forbidden/valence energy band structure had a face-centered cubic crystal structure with the average grain size of several nanometers. The height of the Gd3N@C80/Au Schottky barrier was confirmed to be 400 meV at a low electric field at room temperature. Moreover, the height decreases with the increasing external electric field through a change of permittivity in the Gd3N@C80 sample due to a polarization of the [Gd3] 9 +-[N3 -+("separators="|C80 ) 6 -] dipoles in the Gd3N@C80 molecule. The field-dependence of the barrier height can be described using a power math function of the electric field strength. The results of the field-dependent barrier height indicate that the reduction in the Schottky barrier is due to an image force effect of the transport charge carrier at the Gd3N@C80/Au interface.

  3. Mo1-xWxSe2-Based Schottky Junction Photovoltaic Cells.

    Science.gov (United States)

    Yi, Sum-Gyun; Kim, Sung Hyun; Park, Sungjin; Oh, Donggun; Choi, Hwan Young; Lee, Nara; Choi, Young Jai; Yoo, Kyung-Hwa

    2016-12-14

    We developed Schottky junction photovoltaic cells based on multilayer Mo 1-x W x Se 2 with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo 0.5 W 0.5 Se 2 Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe 2 and WSe 2 devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo 0.5 W 0.5 Se 2 devices. Furthermore, we showed that Mo 0.5 W 0.5 Se 2 -based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.

  4. Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, I.H.; Rubin, S.; Zawodzinski, T.A.; Kress, J.D.; Martin, R.L.; Smith, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas 75083 (United States)

    1996-11-01

    We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy], 5-(2{prime}-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM{close_quote}s) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM{close_quote}s on the Ag surface potential. {ital Ab} {ital initio} Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices. {copyright} {ital 1996 The American Physical Society.}

  5. Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers

    International Nuclear Information System (INIS)

    Campbell, I.H.; Rubin, S.; Zawodzinski, T.A.; Kress, J.D.; Martin, R.L.; Smith, D.L.; Barashkov, N.N.; Ferraris, J.P.

    1996-01-01

    We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy], 5-(2'-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM close-quote s) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM close-quote s on the Ag surface potential. Ab initio Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices. copyright 1996 The American Physical Society

  6. Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers

    Science.gov (United States)

    Campbell, I. H.; Rubin, S.; Zawodzinski, T. A.; Kress, J. D.; Martin, R. L.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

    1996-11-01

    We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy, 5-(2'-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM's) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM's on the Ag surface potential. Ab initio Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices.

  7. Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

    International Nuclear Information System (INIS)

    Harmatha, Ladislav; Ľubica, Stuchlíková; Juraj, Racko; Juraj, Marek; Juraj, Pecháček; Peter, Benko; Michal, Nemec; Juraj, Breza

    2014-01-01

    Highlights: • Dependences of CV characteristics of the AlGaN/GaN structure on frequency and temperature variations. • Identification of electrical activity of defects by capacitance DLTS. • Simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure. - Abstract: The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al 2 O 3 substrate by Low-Pressure Metal–Organic Vapour-Phase Epitaxy (LP-MOVPE). Dependences of the capacitance–voltage (CV) characteristics on the frequency of the measuring signal allow analysing the properties of the 2D electron gas (2DEG) at the AlGaN/GaN heterojunction. Exact location of the hetero-interface below the surface (20 nm) was determined from the concentration profile. Temperature variations of the CV curves reveal the influence of bulk defects in GaN and of the traps at the AlGaN/GaN interface. Electrical activity of these defects was characterized by capacitance Deep Level Transient Fourier Spectroscopy (DLTFS). Experimental results of CV measurements were supported by simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure in dependence on the influence of the concentration of donor-like traps in GaN and of the temperature upon the CV curves

  8. Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

    Directory of Open Access Journals (Sweden)

    Sangeeta Singh

    2016-03-01

    Full Text Available In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS to lower the breakdown voltage of conventional impact ionization MOS (IMOS and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization and source induced barrier tunneling. The silicide source offers very low parasitic resistance, the outcome of which is an increment in voltage drop across the intrinsic region for the same applied bias. This reduces operating voltage and hence, it exhibits a significant reduction in both breakdown and threshold voltage. STS-IMOS shows high immunity against hot electron damage. As a result of this the device reliability increases magnificently. The analytical model for impact ionization current (Iii is developed based on the integration of ionization integral (M. Similarly, to get Schottky tunneling current (ITun expression, Wentzel–Kramers–Brillouin (WKB approximation is employed. Analytical models for threshold voltage and subthreshold slope is optimized against Schottky barrier height (ϕB variation. The expression for the drain current is computed as a function of gate-to-drain bias via integral expression. It is validated by comparing it with the technology computer-aided design (TCAD simulation results as well. In essence, this analytical framework provides the physical background for better understanding of STS-IMOS and its performance estimation.

  9. Electrical characterization of CdTe pixel detectors with Al Schottky anode

    International Nuclear Information System (INIS)

    Turturici, A.A.; Abbene, L.; Gerardi, G.; Principato, F.

    2014-01-01

    Pixelated Schottky Al/p-CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopic imaging, even though they suffer from bias-induced time instability (polarization). In this work, we present the results of the electrical characterization of a (4×4) pixelated Schottky Al/p-CdTe/Pt detector. Current–voltage (I–V) characteristics and current transients were investigated at different temperatures. The results show deep levels that play a dominant role in the charge transport mechanism. The conduction mechanism is dominated by the space charge limited current (SCLC) both under forward bias and at high reverse bias. Schottky barrier height of the Al/CdTe contact was estimated by using the thermionic-field emission model at low reverse bias voltages. Activation energy of the deep levels was measured through the analysis of the reverse current transients at different temperatures. Finally, we employed an analytical method to determine the density and the energy distribution of the traps from SCLC current–voltage characteristics

  10. Characterization of a SiC MIS Schottky diode as RBS particle detector

    Science.gov (United States)

    Kaufmann, I. R.; Pick, A. C.; Pereira, M. B.; Boudinov, H. I.

    2018-02-01

    A 4H-SiC Schottky diode was investigated as a particle detector for Rutherford Backscattering Spectroscopy (RBS) experiment. The device was fabricated on a commercial 4H-SiC epitaxial n-type layer grown onto a 4H-SiC n+ type substrate wafer doped with nitrogen. Hafnium oxide with thickness of 1 nm was deposited by Atomic Layer Deposition and 10 nm of Ni were deposited by sputtering to form the Ni/HfO2/4H-SiC MIS Schottky structure. Current-Voltage curves with variable temperature were measured to extract the real Schottky Barrier Height (0.32 V) and ideality factor values (1.15). Reverse current and Capacitance-Voltage measurements were performed on the 4H-SiC detector and compared to a commercial Si barrier detector acquired from ORTEC. RBS data for four alpha energies (1, 1.5, 2 and 2.5 MeV) were collected from an Au/Si sample using the fabricated SiC and the commercial Si detectors simultaneously. The energy resolution for the fabricated detector was estimated to be between 75 and 80 keV.

  11. Electrical characteristics of {sup 60}Co {gamma}-ray irradiated MIS Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Tataroglu, A. [Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500 Ankara (Turkey)]. E-mail: ademt@gazi.edu.tr; Altindal, S. [Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500 Ankara (Turkey)

    2006-11-15

    In order to interpret the effect of {sup 60}Co {gamma}-ray irradiation dose on the electrical characteristics of MIS Schottky diodes, they were stressed with a zero bias at 1 MHz in dark and room temperature during {gamma}-ray irradiation and the total dose range was 0-450 kGy. The effect of {gamma}-ray exposure on the electrical characteristics of MIS Schottky diodes has been investigated using C-V and G/{omega}-V measurements at room temperature. Experimental results show that {gamma}-ray irradiation induces a decrease in the barrier height {phi} {sub B} and series resistance R {sub s}, decreasing with increasing dose rate. Also, the acceptor concentration N {sub A} increases with increasing radiation dose. The C-V characteristics prove that there is a reaction for extra recombination centers in case of MIS Schottky diodes exposed to {gamma}-ray radiation. Furthermore, the density of interface states N {sub ss} by Hill-Coleman method increases with increasing radiation dose. Experimental results indicate that the interface-trap formation at high irradiation dose is reduced due to positive charge build-up in the Si/SiO{sub 2} interface (due to the trapping of holes) that reduces the flow rate of subsequent holes and protons from the bulk of the insulator to the Si/SiO{sub 2} interface.

  12. Analysis of Schottky Barrier Parameters and Current Transport Properties of V/p-Type GaN Schottky Junction at Low Temperatures

    Science.gov (United States)

    Asha, B.; Harsha, Cirandur Sri; Padma, R.; Rajagopal Reddy, V.

    2018-05-01

    The electrical characteristics of a V/p-GaN Schottky junction have been investigated by current-voltage (I-V) and capacitance-voltage (C-V) characteristics under the assumption of the thermionic emission (TE) theory in the temperature range of 120-280 K with steps of 40 K. The zero-bias barrier height (ΦB0), ideality factor (n), flat-band barrier height (ΦBF) and series resistance (R S) values were evaluated and were found to be strongly temperature dependent. The results revealed that the ΦB0 values increase, whereas n, ΦFB and R S values decrease, with increasing temperature. Using the conventional Richardson plot, the mean barrier height (0.39 eV) and Richardson constant (8.10 × 10-10 Acm-2 K-2) were attained. The barrier height inhomogeneities were demonstrated by assuming a Gaussian distribution function. The interface state density (N SS) values were found to decrease with increasing temperature. The reverse leakage current mechanism of the V/p-GaN Schottky junction was found to be governed by Poole-Frenkel emission at all temperatures.

  13. The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode-rectifying an oversight in Schottky diode investigation

    Energy Technology Data Exchange (ETDEWEB)

    Dawson, P; Feng, L; Penate-Quesada, L [Centre for Nanostructured Media, School of Maths and Physics, Queen' s University of Belfast, Belfast BT7 1NN (United Kingdom); Hill, G [EPSRC National Centre for III-V Technologies, Mappin Street, University ofSheffield, Sheffield S1 3JD (United Kingdom); Mitra, J, E-mail: P.dawson@qub.ac.uk

    2011-03-30

    Schottky-barrier structures with a resistive metal electrode are examined using the 4-point probe method where the probes are connected to the metal electrode only. The observation of a significant decrease in resistance with increasing temperature (over a range of {approx}100 K) in the diode resistance-temperature (R{sub D}-T) characteristic is considered due to charge carrier confinement to the metal electrode at low temperature (high resistance), with the semiconductor progressively opening up as a parallel current carrying channel (low resistance) with increasing temperature due to increasing thermionic emission across the barrier. A simple model is constructed, based on thermionic emission at quasi-zero bias, that generates good fits to the experimental data. The negative differential resistance (NDR) region in the R{sub D}-T characteristic is a general effect and is demonstrated across a broad temperature range for a variety of Schottky structures grown on Si-, GaAs- and InP-substrates. In addition the NDR effect is harnessed in micro-scaled Pd/n-InP devices for the detection of low levels of hydrogen in an ambient atmosphere of nitrogen.

  14. Ricardo Piglia lector de Walter Benjamin: compromiso político y vanguardia artística en los 70 argentinos.

    Directory of Open Access Journals (Sweden)

    Luis Ignacio García García

    2014-03-01

    This paper analyzes the reception of Walter Benjamin by the young Ricardo Piglia. Walter Benjamin, together with Bertolt Brecht, was very important for Piglia’s self-comprehension in the context of the agitated aesthetical-political debates of the ’60s and ’70s. Piglia makes use of the Brechtian Benjamin to articulate aesthetics and politics in a way that singles out his critical work in those years. He builds, from the parameters of a production aesthetic, a position that goes beyond not only the idealistic aesthetics but also the principles of the socialist realism, putting aside the opposition between aesthetic experimentation and politicization of art.

  15. Schottky junction interfacial properties at high temperature: A case of AgNWs embedded metal oxide/p-Si

    Science.gov (United States)

    Mahala, Pramila; Patel, Malkeshkumar; Gupta, Navneet; Kim, Joondong; Lee, Byung Ha

    2018-05-01

    Studying the performance limiting parameters of the Schottky device is an urgent issue, which are addressed herein by thermally stable silver nanowire (AgNW) embedded metal oxide/p-Si Schottky device. Temperature and bias dependent junction interfacial properties of AgNW-ITO/Si Schottky photoelectric device are reported. The current-voltage-temperature (I-V-T), capacitance-voltage-temperature (C-V-T) and impedance analysis have been carried out in the high-temperature region. The ideality factor and barrier height of Schottky junction are assessed using I-V-T characteristics and thermionic emission, to reveal the decrease of ideality factor and increase of barrier height by the increasing of temperature. The extracted values of laterally homogeneous Schottky (ϕb) and ideality factor (n) are approximately 0.73 eV and 1.58, respectively. Series resistance (Rs) assessed using Cheung's method and found that it decreases with the increase of temperature. A linear response of Rs of AgNW-ITO/Si Schottky junction is observed with respect to change in forward bias, i.e. dRS/dV from 0 to 0.7 V is in the range of 36.12-36.43 Ω with a rate of 1.44 Ω/V. Impedance spectroscopy is used to study the effect of bias voltage and temperature on intrinsic Schottky properties which are responsible for photoconversion efficiency. These systematic analyses are useful for the AgNWs-embedding Si solar cells or photoelectrochemical cells.

  16. Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structure

    International Nuclear Information System (INIS)

    Reddy, V. Rajagopal; Reddy, M. Siva Pratap; Kumar, A. Ashok; Choi, Chel-Jong

    2012-01-01

    In the present work, thin film of polyvinyl alcohol (PVA) is fabricated on n-type InP substrate as an interfacial layer for electronic modification of Au/n-InP Schottky contact. The electrical characteristics of Au/PVA/n-InP Schottky diode are determined at annealing temperature in the range of 100–300 °C by current–voltage (I-V) and capacitance–voltage (C-V) methods. The Schottky barrier height and ideality factor (n) values of the as-deposited Au/PVA/n-InP diode are obtained at room temperature as 0.66 eV (I-V), 0.82 eV (C-V) and 1.32, respectively. Upon annealing at 200 °C in nitrogen atmosphere for 1 min, the barrier height value increases to 0.81 eV (I-V), 0.99 eV (C-V) and ideality factor decreases to 1.18. When the contact is annealed at 300 °C, the barrier height value decreases to 0.77 eV (I-V), 0.96 eV (C-V) and ideality factor increases to 1.22. It is observed that the interfacial layer of PVA increases the barrier height by the influence of the space charge region of the Au/n-InP Schottky junction. The discrepancy between Schottky barrier heights calculated from I-V and C-V measurements is also explained. Further, Cheung's functions are used to extract the series resistance of Au/PVA/n-InP Schottky diode. The interface state density as determined by Terman's method is found to be 1.04 × 10 12 and 0.59 × 10 12 cm −2 eV −1 for the as-deposited and 200 °C annealed Au/PVA/n-InP Schottky diodes. Finally, it is seen that the Schottky diode parameters changed with increase in the annealing temperature. - Highlights: ► Electrical properties of Au/polyvinyl alcohol (PVA)/n-InP structure have been studied. ► The Au/PVA/n-InP Schottky structure showed a good rectifying behavior. ► A maximum barrier height is obtained when the contact is annealed at 200 °C. ► Interface state density found to be 0.59 × 10 12 cm −2 eV −1 for 200 °C annealed contact. ► Significant effect of interface state density and series resistance on electrical

  17. Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

    Science.gov (United States)

    Wang, Xiao-Feng; Shao, Zhen-Guang; Chen, Dun-Jun; Lu, Hai; Zhang, Rong; Zheng, You-Dou

    2014-05-01

    We fabricate two Ni/Au-In0.17Al0.83N/AlN/GaN Schottky diodes on substrates of sapphire and Si, respectively, and investigate their forward-bias current transport mechanisms by temperature-dependent current-voltage measurements. In the temperature range of 300-485 K, the Schottky barrier heights (SBHs) calculated by using the conventional thermionic-emission (TE) model are strongly positively dependent on temperature, which is in contrast to the negative-temperature-dependent characteristic of traditional semiconductor Schottky diodes. By fitting the forward-bias I-V characteristics using different current transport models, we find that the tunneling current model can describe generally the I-V behaviors in the entire measured range of temperature. Under the high forward bias, the traditional TE mechanism also gives a good fit to the measured I-V data, and the actual barrier heights calculated according to the fitting TE curve are 1.434 and 1.413 eV at 300K for InAlN/AlN/GaN Schottky diodes on Si and the sapphire substrate, respectively, and the barrier height shows a slightly negative temperature coefficient. In addition, a formula is given to estimate SBHs of Ni/Au—InAlN/AlN/GaN Schottky diodes taking the Fermi-level pinning effect into account.

  18. Walter bustamante tejada, los invisibles en antioquia, 1886-1936: una arqueología de los discursos sobre la homosexualidad.

    OpenAIRE

    Bedoya Molina, Juan Pablo

    2011-01-01

    Los invisibles en Antioquia, 1886-1936: Una arqueología de los discursos sobre la homosexualidad del historiador Walter Alonso Bustamante Tejada, se presenta como un texto pionero para el estudio de la historia de la homosexualidad en Antioquia.

  19. Massenmedien und Bildung: Eine padagogische Interpretation der Adorno-Benjamin-Kontroverse (Mass Media and Education: A Pedagogical Interpretation of the Controversy between Theodore Adorno and Walter Benjamin).

    Science.gov (United States)

    Imai, Yasuo

    1997-01-01

    Gives a pedagogical interpretation of the controversy between Adorno (Theodore) and Benjamin (Walter). Sketches their different conceptions of what constitutes a pedagogical problem and discusses differences between their positions against the background of their shared concern, best described as "experiential poverty." (DSK)

  20. Peer-Assisted Learning Programme: Supporting Students in High-Risk Subjects at the Mechanical Engineering Department at Walter Sisulu University

    Science.gov (United States)

    Makola, Qonda

    2017-01-01

    The majority of the students who enroll at the Walter Sisulu University (WSU) in South Africa are not equipped with the necessary academic/learning skills to cope with the university environment, especially in Mechanical Engineering. The Department of Higher Education and Training (2013, p. 17), further states that "students' support is…

  1. Engineering Institute

    Science.gov (United States)

    Projects Past Projects Publications NSEC » Engineering Institute Engineering Institute Multidisciplinary engineering research that integrates advanced modeling and simulations, novel sensing systems and new home of Engineering Institute Contact Institute Director Charles Farrar (505) 665-0860 Email UCSD EI

  2. Walter Gieseler, Komposition im 20. Jahrhundert. Details – Zusammenhänge, Celle, Moeck, 1975, pp. 228

    Directory of Open Access Journals (Sweden)

    Wilma D'Ambrosio

    2014-10-01

    Full Text Available Stupisce molto che un libro come Komposition im 20. Jahrhundert. Details - Zusammenhänge [Composizione nel 20° secolo. Particolari – Connessioni] di Walter Gieseler, pubblicato in Germania quasi venticinque anni fa, non abbia mai ricevuto un'attenzione maggiore. Strano destino, per un libro così ricco e innovativo, scritto da un autore cui andrebbe per lo meno tributato il merito di essere stato uno dei primi a realizzare una descrizione sistematica delle tecniche compositive novecentesche. Le ragioni vanno forse cercate nel fatto di non avere mai beneficiato di traduzioni in una lingua più ‘internazionale’ e di non appartenere, in senso convenzionale, né al settore propriamente analitico, né teorico-compositivo, né storico-musicale. Di fatto, il libro riassume tutti questi aspetti, nonché argomenti di materia estetica, esecutiva, psicologico-percettiva, notazionale, ecc.

  3. Fundamental Astronomy and Solar System Dynamics : Invited Papers Honoring Prof. Walter Fricke on the occasion of his 70th birthday

    CERN Document Server

    Lieske, J; Seidelmann, P

    1986-01-01

    "Fundamental Astronomy and Solar System Dynamics", a program of invited papers honoring Professor Walter Fricke, who for thirty years has been Director of the Astronomisches Rechen lnstitut in Heidelberg, was held at the Thompson Conference Center of the University of Texas at Austin on Wednesday 27 March 1985 on the occasion of his seventieth birthday and retirement as Director of ARl. Professor Fricke's contributions to astronomy encompass the areas of galactic dynamics, radial velocities, stellar statistics. the fundamental reference system and the constant of precession. Participants were welcomed to the Uni versi ty of Texas by Professor J. Parker Lamb, Chairman of the Department of Aerospace Engineering and Engineering Mechanics. The presentations ranged from discussions of astrometric problems concerned with the reference system, the constant of precession, major and minor planet observations, planetary ephemerides and lunar and satellite laser ranging, to a study of disc galaxies in massive halos. The...

  4. The two sides of the commodity. For an archeology of critical theory of consumption in the work of Walter Benjamin

    Directory of Open Access Journals (Sweden)

    Matías Romani

    2017-03-01

    Full Text Available The aim of this work is to trace a journey through the work of Walter Benjamin to give account of the existence of an incipient critical theory of consumption that appears, dispersed and fragmented among their major concerns as the status of the work of art, industrial technology or modern city. The idea that we intend to show is that the originality of Benjamin's proposal lies in the indirect nature by which access to the cultural question. Not so much as an instance derived from the production process determinations but from the transformations in the sphere of consumption. So the Arcades-Project can be read as a historic attempt to develop the contradiction of the commodity form that the consumer experience is presented as the cynical and utopian moment.

  5. Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

    International Nuclear Information System (INIS)

    Wang, Yaqi; Alur, Siddharth; Sharma, Yogesh; Tong, Fei; Thapa, Resham; Gartland, Patrick; Issacs-Smith, Tamara; Ahyi, Claude; Williams, John; Park, Minseo; Johnson, Mark; Paskova, Tanya; Preble, Edward A; Evans, Keith R

    2011-01-01

    Vertical Schottky diodes were fabricated on the bulk GaN substrate with decreasing impurity concentration from N-face to Ga-face. An array of circular Pt Schottky contacts and a full backside Ti/Al/Ni/Au ohmic contact were prepared on the Ga-face and the N-face of the n-GaN substrate, respectively. The Schottky diode exhibits a minimum specific on-state resistance of 1.3 mΩ cm 2 and a maximum breakdown voltage of 600 V, resulting in a figure-of- merit of 275 MW cm −2 . An ultra-low reverse leakage current density of 3.7 × 10 −4 A cm −2 at reverse bias of 400 V was observed. Temperature-dependent I–V measurements were also carried out to study the forward and reverse transportation mechanisms. (fast track communication)

  6. Fabrication of a Schottky junction diode with direct growth graphene on silicon by a solid phase reaction

    International Nuclear Information System (INIS)

    Kalita, Golap; Hirano, Ryo; Ayhan, Muhammed E; Tanemura, Masaki

    2013-01-01

    We demonstrate fabrication of a Schottky junction diode with direct growth graphene on n-Si by the solid phase reaction approach. Metal-assisted crystallization of a-C thin film was performed to synthesize transfer-free graphene directly on a SiO 2 patterned n-Si substrate. Graphene formation at the substrate and catalyst layer interface is achieved in presence of a Co catalytic and CoO carbon diffusion barrier layer. The as-synthesized material shows a linear current–voltage characteristic confirming the metallic behaviour of the graphene structure. The direct grown graphene on n-Si substrate creates a Schottky junction with a potential barrier of 0.44 eV and rectification diode characteristic. Our finding shows that the directly synthesized graphene on Si substrate by a solid phase reaction process can be a promising technique to fabricate an efficient Schottky junction device. (paper)

  7. Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

    International Nuclear Information System (INIS)

    De-Gang, Zhao; Shuang, Zhang; Wen-Bao, Liu; De-Sheng, Jiang; Jian-Jun, Zhu; Zong-Shun, Liu; Hui, Wang; Shu-Ming, Zhang; Hui, Yang; Xiao-Peng, Hao; Long, Wei

    2010-01-01

    The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Fabrication and characterization of n-AlGaAs/ GaAs Schottky diode for rectennas device application

    International Nuclear Information System (INIS)

    Norfarariyanti Parimon; Abdul Manaf Hashim; Farahiyah Mustafa

    2009-01-01

    Full text: Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectennas device application. Rectennas is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps used in the fabrication of Schottky diode were the conventional steps used in standard GaAs processing. Current?voltage (I-V) measurements showed that the device had rectifying properties with a barrier height of 0.5468 eV for Ni/Au metallization. The fabricated Schottky diode detected RF signals and the cut-off frequency up to 20 GHz was estimated in direct injection experiments. These preliminary results will provide a breakthrough for the direct integration with antenna towards realization of rectennas device application. (author)

  9. Fabrication and Characterization of n-AlGaAs/GaAs Schottky Diode for Rectenna Device Application

    Energy Technology Data Exchange (ETDEWEB)

    Parimon, Norfarariyanti; Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Osman, Mohd Nizam, E-mail: manaf@fke.utm.my [Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya (Malaysia)

    2011-02-15

    Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectenna device application. Rectenna is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps used in the fabrication of Schottky diode were the conventional steps used in standard GaAs processing. Current-voltage (I-V) measurements showed that the device had rectifying properties with a barrier height of 0.5468 eV for Ni/Au metallization. The fabricated Schottky diode detected RF signals and the cut-off frequency up to 20 GHz was estimated in direct injection experiments. These preliminary results will provide a breakthrough for the direct integration with antenna towards realization of rectenna device application.

  10. AlGaN-Based Solar-Blind Schottky Photodetectors Fabricated on AlN/Sapphire Template

    International Nuclear Information System (INIS)

    Li-Wen, Sang; Zhi-Xin, Qin; Long-Bin, Cen; Bo, Shen; Guo-Yi, Zhang; Shu-Ping, Li; Hang-Yang, Chen; Da-Yi, Liu; Jun-Yong, Kang; Cai-Jing, Cheng; Hong-Yan, Zhao; Zheng-Xiong, Lu; Jia-Xin, Ding; Lan, Zhao; Jun-Jie, Si; Wei-Guo, Sun

    2008-01-01

    We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff-wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1 × 10 −6 A/cm 2 at the reverse bias of 5 V. The specific detectivity D* is estimated to be 3.3 × 10 12 cmHz 1/2 W −1 . To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current

  11. Optimization of Silicon parameters as a betavoltaic battery: Comparison of Si p-n and Ni/Si Schottky barrier

    International Nuclear Information System (INIS)

    Rahmani, Faezeh; Khosravinia, Hossein

    2016-01-01

    Theoretical studies on the optimization of Silicon (Si) parameters as the base of betavoltaic battery have been presented using Monte Carlo simulations and the state equations in semiconductor to obtain maximum power. Si with active area of 1 cm 2 has been considered in p-n junction and Schottky barrier structure to collect the radiation induced-charge from 10 mCi cm −2 of Nickle-63 ( 63 Ni) Source. The results show that the betavoltaic conversion efficiency in the Si p-n structure is about 2.7 times higher than that in the Ni/Si Schottky barrier structure. - Highlights: • Silicon parameters were studied in betavoltaic batteries. • Studied betavoltaic batteries include p-n and Schottky barrier structures. • The p-n structure has higher conversion efficiency.

  12. Cumulative dose 60Co gamma irradiation effects on AlGaN/GaN Schottky diodes and its area dependence

    Science.gov (United States)

    Sharma, Chandan; Laishram, Robert; Rawal, Dipendra Singh; Vinayak, Seema; Singh, Rajendra

    2018-04-01

    Cumulative dose gamma radiation effects on current-voltage characteristics of GaN Schottky diodes have been investigated. The different area diodes have been fabricated on AlGaN/GaN high electron mobility transistor (HEMT) epi-layer structure grown over SiC substrate and irradiated with a dose up to the order of 104 Gray (Gy). Post irradiation characterization shows a shift in the turn-on voltage and improvement in reverse leakage current. Other calculated parameters include Schottky barrier height, ideality factor and reverse saturation current. Schottky barrier height has been decreased whereas reverse saturation current shows an increase in the value post irradiation with improvement in the ideality factor. Transfer length measurement (TLM) characterization shows an improvement in the contact resistance. Finally, diodes with larger area have more variation in the calculated parameters due to the induced local heating effect.

  13. Simulations about self-absorption of tritium in titanium tritide and the energy deposition in a silicon Schottky barrier diode

    International Nuclear Information System (INIS)

    Li, Hao; Liu, Yebing; Hu, Rui; Yang, Yuqing; Wang, Guanquan; Zhong, Zhengkun; Luo, Shunzhong

    2012-01-01

    Simulations on the self-absorption of tritium electrons in titanium tritide films and the energy deposition in a silicon Schottky barrier diode are carried out using the Geant4 radiation transport toolkit. Energy consumed in each part of the Schottky radiovoltaic battery is simulated to give a clue about how to make the battery work better. The power and energy-conversion efficiency of the tritium silicon Schottky radiovoltaic battery in an optimized design are simulated. Good consistency with experiments is obtained. - Highlights: ► Simulation of the energy conversion inside the radiovoltaic battery is carried out. ► Energy-conversion efficiency in the simulation shows good consistency with experimental result. ► Inadequacy of the present configuration is studied in this work and improvements are proposed.

  14. Thermodynamic analysis of acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures

    International Nuclear Information System (INIS)

    Das, Subhashis; Majumdar, Shubhankar; Kumar, Rahul; Ghosh, Saptarsi; Biswas, Dhrubes

    2016-01-01

    An AlGaN/GaN heterostructure based metal–semiconductor–metal symmetrically bi-directional Schottky diode sensor structure has been employed to investigate acetone sensing and to analyze thermodynamics of acetone adsorption at low temperatures. The AlGaN/GaN heterostructure has been grown by plasma-assisted molecular beam epitaxy on Si (111). Schottky diode parameters at different temperatures and acetone concentrations have been extracted from I–V characteristics. Sensitivity and change in Schottky barrier height have been studied. Optimum operating temperature has been established. Coverage of acetone adsorption sites at the AlGaN surface and the effective equilibrium rate constant of acetone adsorption have been explored to determine the endothermic nature of acetone adsorption enthalpy.

  15. Fabrication and Characterization of n-AlGaAs/GaAs Schottky Diode for Rectenna Device Application

    International Nuclear Information System (INIS)

    Parimon, Norfarariyanti; Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul; Osman, Mohd Nizam

    2011-01-01

    Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for rectenna device application. Rectenna is one of the most potential devices to form the wireless power supply which is really good at converting microwaves to DC. The processing steps used in the fabrication of Schottky diode were the conventional steps used in standard GaAs processing. Current-voltage (I-V) measurements showed that the device had rectifying properties with a barrier height of 0.5468 eV for Ni/Au metallization. The fabricated Schottky diode detected RF signals and the cut-off frequency up to 20 GHz was estimated in direct injection experiments. These preliminary results will provide a breakthrough for the direct integration with antenna towards realization of rectenna device application.

  16. Temperature dependent current transport of Pd/ZnO nanowire Schottky diodes

    Science.gov (United States)

    Gayen, R. N.; Bhattacharyya, S. R.; Jana, P.

    2014-09-01

    Zinc oxide (ZnO) nanowire based Schottky barrier diodes are fabricated by depositing Pd metal contact on top of vertically well-aligned ZnO nanowire arrays. A vertical array of ZnO nanowires on indium tin oxide (ITO) coated glass substrates is synthesized by hybrid wet chemical route. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) measurement confirm the formation of stoichiometric well-aligned hexagonal (h-ZnO) nanowire arrays with wurtzite structure. Temperature dependent current-voltage (I-V) measurements on palladium-ZnO (Pd/ZnO) nanowire Schottky junctions in the temperature range 303-383 K exhibit excellent rectifying character. From these nonlinear I-V plots, different electrical parameters of diode-like reverse saturation current, barrier height and ideality factor are determined as a function of temperature assuming pure thermionic emission model. The ideality factor is found to decrease while the barrier height increases with the increase in temperature. The series resistance values calculated from Cheung’s functions also show temperature dependency. Such behavior can be attributed to the presence of defects that traps carriers, and barrier height inhomogeneity at the interface of the barrier junction. After barrier height inhomogeneity correction, considering a Gaussian distributed barrier height fluctuation across the Pd/ZnO interface, the estimated values of mean barrier height and modified Richardson constant are more closely matched to the theoretically predicted value for Pd/ZnO Schottky barrier diodes. The variation of density of interface states as a function of interface state energy is also calculated.

  17. Improved designs of Si-based quantum wells and Schottky diodes for IR detection

    Energy Technology Data Exchange (ETDEWEB)

    Moeen, M., E-mail: moeen@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Salemi, A.; Abedin, A.; Östling, M. [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden); Radamson, H.H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640, Kista (Sweden)

    2016-08-31

    Novel structures of intrinsic or carbon-doped multi quantum wells (MQWs) and intrinsic or carbon-doped Si Schottky diodes (SD), individually or in combination, have been manufactured to detect the infrared (IR) radiation. The carbon concentration in the structures was 5 × 10{sup 20} cm{sup −3} and the MQWs are located in the active part of the IR detector. A Schottky diode was designed and formed as one of the contacts (based on NiSi(C)/TiW) to MQWs where on the other side the structure had an Ohmic contact. The thermal response of the detectors is expressed in terms of temperature coefficient of resistance (TCR) and the quality of the electrical signal is quantified by the signal-to-noise ratio. The noise measurements provide the K{sub 1/f} parameter which is obtained from the power spectrum density. An excellent value of TCR = − 6%/K and K{sub 1/f} = 4.7 × 10{sup −14} was measured for the detectors which consist of the MQWs in series with the SD. These outstanding electrical results indicate a good opportunity to manufacture low cost Si-based IR detectors in the near future. - Highlights: • SiGe (C)/Si(C) multi quantum wells (MQWs) are evaluated to detect IR radiation. • Schottky diodes (SDs), individually or in series with MQWs are also fabricated. • Detectors consisted of MQWs in series with SD show excellent thermal sensing. • The noise values are also extremely low for MQWs in series with SD.

  18. Improved designs of Si-based quantum wells and Schottky diodes for IR detection

    International Nuclear Information System (INIS)

    Moeen, M.; Kolahdouz, M.; Salemi, A.; Abedin, A.; Östling, M.; Radamson, H.H.

    2016-01-01

    Novel structures of intrinsic or carbon-doped multi quantum wells (MQWs) and intrinsic or carbon-doped Si Schottky diodes (SD), individually or in combination, have been manufactured to detect the infrared (IR) radiation. The carbon concentration in the structures was 5 × 10 20 cm −3 and the MQWs are located in the active part of the IR detector. A Schottky diode was designed and formed as one of the contacts (based on NiSi(C)/TiW) to MQWs where on the other side the structure had an Ohmic contact. The thermal response of the detectors is expressed in terms of temperature coefficient of resistance (TCR) and the quality of the electrical signal is quantified by the signal-to-noise ratio. The noise measurements provide the K 1/f parameter which is obtained from the power spectrum density. An excellent value of TCR = − 6%/K and K 1/f = 4.7 × 10 −14 was measured for the detectors which consist of the MQWs in series with the SD. These outstanding electrical results indicate a good opportunity to manufacture low cost Si-based IR detectors in the near future. - Highlights: • SiGe (C)/Si(C) multi quantum wells (MQWs) are evaluated to detect IR radiation. • Schottky diodes (SDs), individually or in series with MQWs are also fabricated. • Detectors consisted of MQWs in series with SD show excellent thermal sensing. • The noise values are also extremely low for MQWs in series with SD.

  19. A high-speed Schottky detector for ultra-wideband communications

    DEFF Research Database (Denmark)

    Valdecasa, Guillermo Silva; Cimoli, Bruno; Blanco Granja, Ángel

    2017-01-01

    This letter reviews the design procedure of a high‐speed Schottky video detector for high‐data‐rate communications within the ultra‐wideband (UWB) frequencies. The classic design approach for video detectors is extended with a mixer‐like analysis, which results in a more detailed assessment of th....... Using 0 dBm carrier power, the lowest measured conversion loss is 10 dB for a video frequency of 1.1 GHz and better than 13 dB up to 1.8 GHz....

  20. Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films

    Directory of Open Access Journals (Sweden)

    F. Schipani

    2012-09-01

    Full Text Available The oxygen adsorption effects on the Schottky barriers height measurements for thick films gas sensors prepared with undoped nanometric SnO2 particles were studied. From electrical measurements, the characteristics of the intergranular potential barriers developed at intergrains were deduced. It is shown that the determination of effective activation energies from conduction vs. 1/temperature curves is not generally a correct manner to estimate barrier heights. This is due to gas adsorption/desorption during the heating and cooling processes, the assumption of emission over the barrier as the dominant conduction mechanism, and the possible oxygen diffusion into or out of the grains.

  1. Theory of warm ionized gases: equation of state and kinetic Schottky anomaly.

    Science.gov (United States)

    Capolupo, A; Giampaolo, S M; Illuminati, F

    2013-10-01

    Based on accurate Lennard-Jones-type interaction potentials, we derive a closed set of state equations for the description of warm atomic gases in the presence of ionization processes. The specific heat is predicted to exhibit peaks in correspondence to single and multiple ionizations. Such kinetic analog in atomic gases of the Schottky anomaly in solids is enhanced at intermediate and low atomic densities. The case of adiabatic compression of noble gases is analyzed in detail and the implications on sonoluminescence are discussed. In particular, the predicted plasma electron density in a sonoluminescent bubble turns out to be in good agreement with the value measured in recent experiments.

  2. Design and Characterization of 1.8-3.2 THz Schottky-based Harmonic Mixers

    OpenAIRE

    Bulcha, BT; Hesler, JL; Drakinskiy, V; Stake, J; Valavanis, A; Dean, P; Li, LH; Barker, NS

    2016-01-01

    A room-temperature Schottky diode-based WM-86 (WR-0.34) harmonic mixer was developed to build high-resolution spectrometers, and multi-pixel receivers in the THz region for applications such as radio astronomy, plasma diagnostics, and remote sensing. The mixer consists of a quartz-based Local Oscillator (LO), Intermediate-Frequency (IF) circuits, and a GaAs-based beam-lead THz circuit with an integrated diode. Measurements of the harmonic mixer were performed using a 2 THz solid-state source ...

  3. Microwave Schottky diagnostic systems for the Fermilab Tevatron, Recycler, and CERN Large Hadron Collider

    Directory of Open Access Journals (Sweden)

    Ralph J. Pasquinelli

    2011-07-01

    Full Text Available A means for noninvasive measurement of transverse and longitudinal characteristics of bunched beams in synchrotrons has been developed based on high sensitivity slotted waveguide pickups. The pickups allow for bandwidths exceeding hundreds of MHz while maintaining good beam sensitivity characteristics. Wide bandwidth is essential to allow bunch-by-bunch measurements by means of a fast gate. The Schottky detector system is installed and successfully commissioned in the Fermilab Tevatron, Recycler and CERN LHC synchrotrons. Measurement capabilities include tune, chromaticity, and momentum spread of single or multiple beam bunches in any combination. With appropriate calibrations, emittance can also be measured by integrating the area under the incoherent tune sidebands.

  4. Effect of hydrogen on the diode properties of reactively sputtered amorphous silicon Schottky barrier structures

    International Nuclear Information System (INIS)

    Morel, D.L.; Moustakas, T.D.

    1981-01-01

    The diode properties of reactively sputtered hydrogenated amorphous silicon Schottky barrier structures (a-SiH/sub x/ /Pt) have been investigated. We find a systematic relation between the changes in the open circuit voltage, the barrier height, and the diode quality factor. These results are accounted for by assuming that hydrogen incorporation into the amorphous silicon network removes states from the top of the valence band and sharpens the valence-band tail. Interfacial oxide layers play a significant role in the low hydrogen content, and low band-gap regime

  5. Microscopic theory of warm ionized gases: equation of state and kinetic Schottky anomaly

    International Nuclear Information System (INIS)

    Capolupo, A; Giampaolo, S M; Illuminati, F

    2013-01-01

    Based on accurate Lennard-Jones type interaction potentials, we derive a closed set of state equations for the description of warm atomic gases in the presence of ionization processes. The specific heat is predicted to exhibit peaks in correspondence to single and multiple ionizations. Such kinetic analogue in atomic gases of the Schottky anomaly in solids is enhanced at intermediate and low atomic densities. The case of adiabatic compression of noble gases is analyzed in detail and the implications on sonoluminescence are discussed.

  6. Enhanced mixing characteristics of GaAs/3,4,9,10-perylenetetracarboxylic dianhydride Schottky diodes

    International Nuclear Information System (INIS)

    Ginev, G; Riedl, T; Parashkov, R; Johannes, H-H; Kowalsky, W

    2003-01-01

    The influences on the mixing properties of GaAs Schottky diodes containing an organic 3,4,9,10-perylenetetracarboxylic dianhydride layer were investigated. The frequency conversion ability of the devices was determined by considering the I-V characteristics and high frequency reflection parameters by using a mixing technique operated in the microwave range. The results show that an organic layer with 20 nm thickness enhances the diode conversion gain for mixing applications by 3 dB and lowers the device operating bias voltage by 0.1 V. This process is related to the specific properties of the organic semiconductor and resulting organic-inorganic interface

  7. Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

    Science.gov (United States)

    Lee, Sungsik; Nathan, Arokia

    2016-10-01

    The quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime (i.e., near the OFF state) at low supply voltages (400) that was both bias and geometry independent. The transistor reported here is useful for sensor interface circuits in wearable devices where high current sensitivity and ultralow power are vital for battery-less operation.

  8. Characteristics of Al/p-AgGaTe2 polycrystalline thin film Schottky barrier diode

    International Nuclear Information System (INIS)

    Patel, S.S.; Patel, B.H.; Patel, T.S.

    2008-01-01

    An Al/p-AgGaTe 2 polycrystalline thin film schottky barrier diode have been prepared by flash-evaporation of p-AgGaTe 2 onto a pre-deposited film of aluminium. The current-voltage, capacitance-voltage and photoresponse of the diode have been investigated. The important physical parameter such as barrier height of the fabricated diode was derived from these measurements. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Fundamental studies of graphene/graphite and graphene-based Schottky photovoltaic devices

    Science.gov (United States)

    Miao, Xiaochang

    In the carbon allotropes family, graphene is one of the most versatile members and has been extensively studied since 2004. The goal of this dissertation is not only to investigate the novel fundamental science of graphene and its three-dimensional sibling, graphite, but also to explore graphene's promising potential in modern electronic and optoelectronic devices. The first two chapters provide a concise introduction to the fundamental solid state physics of graphene (as well as graphite) and the physics at the metal/semiconductor interfaces. In the third chapter, we demonstrate the formation of Schottky junctions at the interfaces of graphene (semimetal) and various inorganic semiconductors that play dominating roles in today's semiconductor technology, such as Si, SiC, GaAs and GaN. As shown from their current-voltage (I -V) and capacitance-voltage (C-V) characteristics, the interface physics can be well described within the framework of the Schottky-Mott model. The results are also well consist with that from our previous studies on graphite based Schottky diodes. In the fourth chapter, as an extension of graphene based Schottky work, we investigate the photovoltaic (PV) effect of graphene/Si junctions after chemically doped with an organic polymer (TFSA). The power conversion efficiency of the solar cell improves from 1.9% to 8.6% after TFSA doping, which is the record in all graphene based PVs. The I -V, C-V and external quantum efficiency measurements suggest 12 that such a significant enhancement in the device performance can be attributed to a doping-induced decrease in the series resistance and a simultaneous increase in the built-in potential. In the fifth chapter, we investigate for the first time the effect of uniaxial strains on magneto-transport properties of graphene. We find that low-temperature weak localization effect in monolayer graphene is gradually suppressed under increasing strains, which is due to a strain-induced decreased intervalley

  10. Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene

    Energy Technology Data Exchange (ETDEWEB)

    Anugrah, Yoska; Robbins, Matthew C.; Koester, Steven J. [Department of Electrical and Computer Engineering, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455 (United States); Crowell, Paul A. [School of Physics and Astronomy, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455 (United States)

    2015-03-09

    Phosphorene, the 2D analogue of black phosphorus, is a promising material for studying spin transport due to its low spin-orbit coupling and its ½ nuclear spin, which could allow the study of hyperfine effects. In this work, the properties of permalloy (Py) and cobalt (Co) contacts to few-layer phosphorene are presented. The Schottky barrier height was extracted and determined as a function of gate bias. Flat-band barrier heights, relative to the valence band edge, of 110 meV and 200 meV were determined for Py and Co, respectively. These results are important for future studies of spin transport in phosphorene.

  11. Schottky barrier enhancement on n-InP solar cell applications

    DEFF Research Database (Denmark)

    Clausen, Thomas; Leistiko, Otto

    1994-01-01

    It is demonstrated that the Schottky barrier height on n-type InP can be enhanced to values close to the energy bandgap (1.35 eV) by employing a AuZnCr metallization. The process is simple and requires only mild and fast annealing sequences with temperatures not exceeding 500°C. Also, no critical...... epitaxial growth step of junctions is needed, making the process fairly cheap. Thus, prospects for an efficient and simple solar cell device structure for space application purposes based on highly radiant-resistant InP are greatly improved...

  12. Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.

    Science.gov (United States)

    Huang, Qi-Kun; Yan, Yi; Zhang, Kun; Li, Huan-Huan; Kang, Shishou; Tian, Yu-Feng

    2016-11-23

    Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

  13. Anomalous Schottky specific heat and structural distortion in ferromagnetic PrAl2.

    Science.gov (United States)

    Pathak, Arjun K; Paudyal, D; Mudryk, Y; Gschneidner, K A; Pecharsky, V K

    2013-05-03

    Unique from other rare earth dialuminides, PrAl(2) undergoes a cubic to tetragonal distortion below T = 30 K in a zero magnetic field, but the system recovers its cubic symmetry upon the application of an external magnetic field of 10 kOe via a lifting of the 4f crystal field splitting. The nuclear Schottky specific heat in PrAl(2) is anomalously high compared to that of pure Pr metal. First principles calculations reveal that the 4f crystal field splitting in the tetragonally distorted phase of PrAl(2) underpins the observed unusual low temperature phenomena.

  14. White-light emission from porous-silicon-aluminium Schottky junctions

    International Nuclear Information System (INIS)

    Masini, G.; La Monica, S.; Maiello, G.

    1996-01-01

    Porous-silicon-based white-light-emitting devices are presented. The fabrication process on different substrates is described. The peculiarities of technological steps for device fabrication (porous-silicon formation and aluminium treatment) are underlined. Doping profile of the porous layer, current-voltage characteristics, time response, lifetime tests and electroluminescence emission spectrum of the device are presented. A model for electrical behaviour of Al/porous silicon Schottky junction is presented. Electroluminescence spectrum of the presented devices showed strong similarities with white emission from crystalline silicon junctions in the breakdown region

  15. Power Conversion Efficiency of AlGaAs/GaAs Schottky Diode for Low-Power On-Chip Rectenna Device Application

    International Nuclear Information System (INIS)

    Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd; Osman, Mohd Nizam

    2011-01-01

    A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height from theoretical value are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are well rectified by the fabricated Schottky diodes and stable DC output voltage is obtained. Power conversion efficiency up to 50% is obtained at 1 GHz with series connection between diode and load. The fabricated the n-AlGaAs/GaAs Schottky diode provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

  16. Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.

    Science.gov (United States)

    Kumar, Ashutosh; Kashid, Ranjit; Ghosh, Arindam; Kumar, Vikram; Singh, Rajendra

    2016-03-01

    Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes. The ideality factor of graphene/GaN and Ni/GaN diodes are measured to be 1.33 and 1.51, respectively, which is suggestive of comparatively higher thermionic emission current in graphene/GaN diode. The barrier height values for graphene/GaN diode obtained using thermionic emission model and Richardson plots are found to be 0.60 and 0.72 eV, respectively, which are higher than predicted barrier height ∼0.40 eV as per the Schottky-Mott model. The higher barrier height is attributed to hole doping of graphene due to graphene-Au interaction which shifts the Fermi level in graphene by ∼0.3 eV. The magnitude of flicker noise of graphene/GaN Schottky diode increases up to 175 K followed by its decrease at higher temperatures. This indicates that diffusion currents and barrier inhomogeneities dominate the electronic transport at lower and higher temperatures, respectively. The exfoliated graphene/GaN diode is found to have lower level of barrier inhomogeneities than conventional Ni/GaN diode, as well as earlier reported graphene/GaN diode fabricated using chemical vapor deposited graphene. The lesser barrier inhomogeneities in graphene/GaN diode results in lower flicker noise by 2 orders of magnitude as compared to Ni/GaN diode. Enhanced thermionic emission current, lower level of inhomogeneities, and reduced flicker noise suggests that graphene-GaN Schottky diodes may have the underlying trend for replacing metal-GaN Schottky diodes.

  17. Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

    OpenAIRE

    Sata, Yohta; Moriya, Rai; Morikawa, Sei; Yabuki, Naoto; Masubuchi, Satoru; Machida, Tomoki

    2015-01-01

    We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe2 vdW interface is ...

  18. Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction

    Science.gov (United States)

    Trushin, Maxim

    2018-04-01

    The standard theory of thermionic emission developed for three-dimensional semiconductors does not apply to two-dimensional materials even for making qualitative predictions because of the vanishing out-of-plane quasiparticle velocity. This study reveals the fundamental origin of the out-of-plane charge carrier motion in a two-dimensional conductor due to the finite quasiparticle lifetime and huge uncertainty of the out-of-plane momentum. The theory is applied to a Schottky junction between graphene and a bulk semiconductor to derive a thermionic constant, which, in contrast to the conventional Richardson constant, is determined by the Schottky barrier height and Fermi level in graphene.

  19. Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process

    Science.gov (United States)

    Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Watahiki, Tatsuro; Yamamuka, Mikio

    2018-04-01

    The origin of the leakage current of a trench-type vertical GaN diode was discussed. We found that the edge of p-GaN is the main leakage spot. To reduce the reverse leakage current at the edge of p-GaN, a dual-anode process was proposed. As a result, the reverse blocking voltage defined at the leakage current density of 1 mA/cm2 of a vertical GaN junction barrier Schottky (JBS) diode was improved from 780 to 1,190 V, which is the highest value ever reported for vertical GaN Schottky barrier diodes (SBDs).

  20. Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

    Science.gov (United States)

    Ho, Szuheng; Yu, Hyeonggeun; So, Franky

    2017-11-01

    Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

  1. Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Altuhov, V. I., E-mail: altukhovv@mail.ru; Kasyanenko, I. S.; Sankin, A. V. [North Caucasian Federal University, Institute of Service, Tourism and Design (Branch) (Russian Federation); Bilalov, B. A. [Dagestan State Technical University (Russian Federation); Sigov, A. S. [Moscow State Technical University of Radio Engineering, Electronics, and Automation (Russian Federation)

    2016-09-15

    A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC){sub 1–x}(AlN){sub x} structures. The results of calculations are compared to experimental data.

  2. A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Purches, W. E. [School of Physics, UNSW, Sydney 2052 (Australia); Rossi, A.; Zhao, R. [School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052 (Australia); Kafanov, S.; Duty, T. L. [School of Physics, UNSW, Sydney 2052 (Australia); Centre for Engineered Quantum Systems (EQuS), School of Physics, UNSW, Sydney 2052 (Australia); Dzurak, A. S. [School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052 (Australia); Australian Centre of Excellence for Quantum Computation and Communication Technology (CQC2T), UNSW, Sydney 2052 (Australia); Rogge, S.; Tettamanzi, G. C., E-mail: g.tettamanzi@unsw.edu.au [School of Physics, UNSW, Sydney 2052 (Australia); Australian Centre of Excellence for Quantum Computation and Communication Technology (CQC2T), UNSW, Sydney 2052 (Australia)

    2015-08-10

    Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.

  3. Interface Engineering of Organic Schottky Barrier Solar Cells and Its Application in Enhancing Performances of Planar Heterojunction Solar Cells

    OpenAIRE

    Fangming Jin; Zisheng Su; Bei Chu; Pengfei Cheng; Junbo Wang; Haifeng Zhao; Yuan Gao; Xingwu Yan; Wenlian Li

    2016-01-01

    In this work, we describe the performance of organic Schottky barrier solar cells with the structure of ITO/molybdenum oxide (MoOx)/boron subphthalocyanine chloride (SubPc)/bathophenanthroline (BPhen)/Al. The SubPc-based Schottky barrier solar cells exhibited a short-circuit current density (Jsc) of 2.59?mA/cm2, an open-circuit voltage (Voc) of 1.06?V, and a power conversion efficiency (PCE) of 0.82% under simulated AM1.5?G solar illumination at 100?mW/cm2. Device performance was substantiall...

  4. Experience in the Very Moment of Writing: Reconsidering Walter Benjamin's Theory of Mimesis

    Science.gov (United States)

    Tsuji, Atsuko

    2010-01-01

    The purpose of this paper is to examine the ateleological moment of learning through imitation. In general, we can learn something new through imitating models we are given, which embody the values of our own society, culture and institutions. This means that imitation is understood in terms of the representation or reproduction of original…

  5. GaAs detectors with an ultra-thin Schottky contact for spectrometry of charged particles

    Energy Technology Data Exchange (ETDEWEB)

    Chernykh, S.V., E-mail: chsv_84@mail.ru [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Chernykh, A.V. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Didenko, S.I.; Baryshnikov, F.M. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Burtebayev, N. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan); Britvich, G.I. [Institute of High Energy Physics, Protvino, Moscow region (Russian Federation); Chubenko, A.P. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow (Russian Federation); Guly, V.G.; Glybin, Yu.N. [LLC “SNIIP Plus”, Moscow (Russian Federation); Zholdybayev, T.K.; Burtebayeva, J.T.; Nassurlla, M. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan)

    2017-02-11

    For the first time, samples of particle detectors based on high-purity GaAs epilayers with an active area of 25 and 80 mm{sup 2} and an ultra-thin Pt Schottky barrier were fabricated for use in the spectrometry of charged particles and their operating characteristics were studied. The obtained FWHM of 14.2 (for 25 mm{sup 2} detector) and 15.5 keV (for 80 mm{sup 2} detector) on the 5.499 MeV line of {sup 238}Pu is at the level of silicon spectrometric detectors. It was found that the main component that determines the energy resolution of the detector is a fluctuation in the number of collected electron–hole pairs. This allows us to state that the obtained energy resolution is close to the limit for VPE GaAs. - Highlights: • VPE GaAs particle detectors with an active area of 25 and 80 mm{sup 2} were fabricated. • 120 Å ultra-thin Pt Schottky barrier was used as a rectifying contact. • The obtained FWHM of 14.2 keV ({sup 238}Pu) is at the level of Si spectrometric detectors. • Various components of the total energy resolution were analyzed. • It was shown that obtained energy resolution is close to its limit for VPE GaAs.

  6. Ellipsometric study and application of rubrene thin film in organic Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Liang; Deng, Jinxiang, E-mail: jdeng@bjut.edu.cn; Gao, Hongli; Yang, Qianqian; Kong, Le; Cui, Min; Zhang, Zijia

    2016-12-01

    Highlights: • The optical constants of rubrene were studied by ellipsometry spectroscopic. • The α reveals direct allowed transition with corresponding energy 2.21 eV. • A Schottky diodes based on rubrene were fabricated. • The basic device parameters were determined by the I–V measurement. - Abstract: Rubrene thin film was deposited by thermal evaporation technique under high vacuum (∼10{sup −4} Pa). The film surface morphology was characterized by atomic force microscopy (AFM). Ellipsometric studies on rubrene thin film were presented for understanding its growth and optical characteristics by the Classical-Oscillator model. The analysis of the absorption coefficient (α) revealed the direct allowed transition with corresponding energy 2.21 eV of the rubrene film. In order to exploring the rubrene applications, Al/rubrene/ITO Schottky diode was fabricated. The basic device parameters, barrier height and ideality factor were determined by the I–V measurement. The log(I)–log(V) characteristic indicated three distinct regions. These regions followed ohmic conduction, TCL conduction and SCLC conduction mechanisms.

  7. Sub 20 meV Schottky barriers in metal/MoTe2 junctions

    Science.gov (United States)

    Townsend, Nicola J.; Amit, Iddo; Craciun, Monica F.; Russo, Saverio

    2018-04-01

    The newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semiconducting transition metal dichalcogenides (TMDCs) are of particular interest. While their band gaps are compatible with those of conventional solid state devices, they present a wide range of exciting new properties that is bound to become a crucial ingredient in the future of electronics. To utilise these properties for the prospect of electronics in general, and long-wavelength-based photodetectors in particular, the Schottky barriers formed upon contact with a metal and the contact resistance that arises at these interfaces have to be measured and controlled. We present experimental evidence for the formation of Schottky barriers as low as 10 meV between MoTe2 and metal electrodes. By varying the electrode work functions, we demonstrate that Fermi level pinning due to metal induced gap states at the interfaces occurs at 0.14 eV above the valence band maximum. In this configuration, thermionic emission is observed for the first time at temperatures between 40 K and 75 K. Finally, we discuss the ability to tune the barrier height using a gate electrode.

  8. A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction

    Directory of Open Access Journals (Sweden)

    Zhang Teng-Fei

    2016-11-01

    Full Text Available In this study, we present a simple ultraviolet (UV light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlOx film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.

  9. Temperature dependent electrical characterization of organic Schottky diode based on thick MgPc films

    Science.gov (United States)

    Singh, J.; Sharma, R. K.; Sule, U. S.; Goutam, U. K.; Gupta, Jagannath; Gadkari, S. C.

    2017-07-01

    Magnesium phthalocyanine (MgPc) based Schottky diode on indium tin oxide (ITO) substrate was fabricated by thermal evaporation method. The dark current voltage characteristics of the prepared ITO-MgPc-Al heterojunction Schottky diode were measured at different temperatures. The diode showed the non-ideal rectification behavior under forward and reverse bias conditions with a rectification ratio (RR) of 56 at  ±1 V at room temperature. Under forward bias, thermionic emission and space charge limited conduction (SCLC) were found to be the dominant conduction mechanisms at low (below 0.6 V) and high voltages (above 0.6 V) respectively. Under reverse bias conditions, Poole-Frenkel (field assisted thermal detrapping of carriers) was the dominant conduction mechanism. Three different approaches namely, I-V plots, Norde and Cheung methods were used to determine the diode parameters including ideality factor (n), barrier height (Φb), series resistance (R s) and were compared. SCLC mechanism showed that the trap concentration is 5.52  ×  1022 m-3 and it lies at 0.46 eV above the valence band edge.

  10. Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions

    KAUST Repository

    Tian, He

    2014-08-11

    Recently, two-dimensional materials such as molybdenum disulphide (MoS 2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V.s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.

  11. Tunable reverse-biased graphene/silicon heterojunction Schottky diode sensor.

    Science.gov (United States)

    Singh, Amol; Uddin, Ahsan; Sudarshan, Tangali; Koley, Goutam

    2014-04-24

    A new chemical sensor based on reverse-biased graphene/Si heterojunction diode has been developed that exhibits extremely high bias-dependent molecular detection sensitivity and low operating power. The device takes advantage of graphene's atomically thin nature, which enables molecular adsorption on its surface to directly alter graphene/Si interface barrier height, thus affecting the junction current exponentially when operated in reverse bias and resulting in ultrahigh sensitivity. By operating the device in reverse bias, the work function of graphene, and hence the barrier height at the graphene/Si heterointerface, can be controlled by the bias magnitude, leading to a wide tunability of the molecular detection sensitivity. Such sensitivity control is also possible by carefully selecting the graphene/Si heterojunction Schottky barrier height. Compared to a conventional graphene amperometric sensor fabricated on the same chip, the proposed sensor demonstrated 13 times higher sensitivity for NO₂ and 3 times higher for NH₃ in ambient conditions, while consuming ∼500 times less power for same magnitude of applied voltage bias. The sensing mechanism based on heterojunction Schottky barrier height change has been confirmed using capacitance-voltage measurements. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes.

    Science.gov (United States)

    Shen, Jun; Liu, Xiangzhi; Song, Xuefen; Li, Xinming; Wang, Jun; Zhou, Quan; Luo, Shi; Feng, Wenlin; Wei, Xingzhan; Lu, Shirong; Feng, Shuanglong; Du, Chunlei; Wang, Yuefeng; Shi, Haofei; Wei, Dapeng

    2017-05-11

    Schottky heterojunctions based on graphene-silicon structures are promising for high-performance photodetectors. However, existing fabrication processes adopt transferred graphene as electrodes, limiting process compatibility and generating pollution because of the metal catalyst. In this report, photodetectors are fabricated using directly grown graphene nanowalls (GNWs) as electrodes. Due to the metal-free growth process, GNWs-Si heterojunctions with an ultralow measured current noise of 3.1 fA Hz -1/2 are obtained, and the as-prepared photodetectors demonstrate specific detectivities of 5.88 × 10 13 cm Hz 1/2 W -1 and 2.27 × 10 14 cm Hz 1/2 W -1 based on the measured and calculated noise current, respectively, under ambient conditions. These are among the highest reported values for planar silicon Schottky photodetectors. In addition, an on/off ratio of 2 × 10 7 , time response of 40 μs, cut-off frequency of 8.5 kHz and responsivity of 0.52 A W -1 are simultaneously realized. The ultralow current noise is attributed to the excellent junction quality with a barrier height of 0.69 eV and an ideal factor of 1.18. Furthermore, obvious infrared photoresponse is observed in blackbody tests, and potential applications based on the photo-thermionic effect are discussed.

  13. A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction

    Science.gov (United States)

    Zhang, Teng-Fei; Wu, Guo-An; Wang, Jiu-Zhen; Yu, Yong-Qiang; Zhang, Deng-Yue; Wang, Dan-Dan; Jiang, Jing-Bo; Wang, Jia-Mu; Luo, Lin-Bao

    2017-08-01

    In this study, we present a simple ultraviolet (UV) light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlOx film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.

  14. Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole

    Science.gov (United States)

    Si, Chen; Lin, Zuzhang; Zhou, Jian; Sun, Zhimei

    2017-03-01

    The discoveries of graphene and other related two-dimensional crystals have recently led to a new technology: van der Waals (vdW) heterostructures based on these atomically thin materials. Such a paradigm has been proved promising for a wide range of applications from nanoelectronics to optoelectronics and spintronics. Here, using first-principles calculations, we investigate the electronic structure and interface characteristics of a newly synthesized GaSe/graphene (GaSe/g) vdW heterostructure. We show that the intrinsic electronic properties of GaSe and graphene are both well preserved in the heterostructure, with a Schottky barrier formed at the GaSe/g interface. More interestingly, the band alignment between graphene and GaSe can be effectively modulated by tuning the interfacial distance or applying an external electric filed. This makes the Schottky barrier height (SBH) controllable, which is highly desirable in the electronic and optoelectronic devices based on vdW heterostructures. In particular, the tunability of the interface dipole and potential step is further uncovered to be the underlying mechanism that ensures this controllable tuning of SBH.

  15. Current Transport Mechanisms and Capacitance Characteristic in the InN/InP Schottky Structures

    Directory of Open Access Journals (Sweden)

    K. AMEUR

    2014-05-01

    Full Text Available In this work, electrical characterization of the current-voltage and capacitance- voltage curves for the Metal/InN/InP Schottky structures are investigated. We have studied electrically thin InN films realized by the nitridation of InP (100 substrates using a Glow Discharge Source (GDS in ultra high vacuum. The I (V curves have exhibited anomalous two-step (kink forward bias behaviour; a suitable fit was only obtained by using a model of two discrete diodes in parallel. Thus, we have calculated, using I(V and C(V curves of Hg/InN/InP Schottky structures, the ideality factor n, the saturation current Is, the barrier height jB, the series resistance Rs, the doping concentration Nd and the diffusion voltage Vd. We have also presented the band diagram of this heterojunction which indicates the presence of a channel formed by holes at the interface InN/InP which explain by the presence of two-dimensional electron gas (2-DEG and this was noticed in the presentation of characteristics C(V.

  16. Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode.

    Science.gov (United States)

    Zhao, Yudan; Xiao, Xiaoyang; Huo, Yujia; Wang, Yingcheng; Zhang, Tianfu; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan; Li, Qunqing

    2017-06-07

    We have fabricated carbon nanotube and MoS 2 field-effect transistors with asymmetric contact forms of source-drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (Φ SB ) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the Φ SB for both contact forms of CNT and MoS 2 devices; we found that the Φ SB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barrier diodes with a current ratio up to 10 4 ; rectifying circuits consisting of these diodes were able to work in a wide frequency range. This design avoided the use of complex chemical doping or heterojunction methods to achieve fundamental diodes that are relatively simple and use only a single material; these may be suitable for future application in nanoelectronic radio frequency or integrated circuits.

  17. Polycrystalline silicon carbide dopant profiles obtained through a scanning nano-Schottky contact

    Energy Technology Data Exchange (ETDEWEB)

    Golt, M. C.; Strawhecker, K. E.; Bratcher, M. S. [U.S. Army Research Laboratory, WMRD, Aberdeen Proving Ground, Maryland 21005 (United States); Shanholtz, E. R. [ORISE, Belcamp, Maryland 21017 (United States)

    2016-07-14

    The unique thermo-electro-mechanical properties of polycrystalline silicon carbide (poly-SiC) make it a desirable candidate for structural and electronic materials for operation in extreme environments. Necessitated by the need to understand how processing additives influence poly-SiC structure and electrical properties, the distribution of lattice defects and impurities across a specimen of hot-pressed 6H poly-SiC processed with p-type additives was visualized with high spatial resolution using a conductive atomic force microscopy approach in which a contact forming a nano-Schottky interface is scanned across the sample. The results reveal very intricate structures within poly-SiC, with each grain having a complex core-rim structure. This complexity results from the influence the additives have on the evolution of the microstructure during processing. It was found that the highest conductivities localized at rims as well as at the interface between the rim and the core. The conductivity of the cores is less than the conductivity of the rims due to a lower concentration of dopant. Analysis of the observed conductivities and current-voltage curves is presented in the context of nano-Schottky contact regimes where the conventional understanding of charge transport to diode operation is no longer valid.

  18. Electronic Properties of DNA-Based Schottky Barrier Diodes in Response to Alpha Particles.

    Science.gov (United States)

    Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

    2015-05-21

    Detection of nuclear radiation such as alpha particles has become an important field of research in recent history due to nuclear threats and accidents. In this context; deoxyribonucleic acid (DNA) acting as an organic semiconducting material could be utilized in a metal/semiconductor Schottky junction for detecting alpha particles. In this work we demonstrate for the first time the effect of alpha irradiation on an Al/DNA/p-Si/Al Schottky diode by investigating its current-voltage characteristics. The diodes were exposed for different periods (0-20 min) of irradiation. Various diode parameters such as ideality factor, barrier height, series resistance, Richardson constant and saturation current were then determined using conventional, Cheung and Cheung's and Norde methods. Generally, ideality factor or n values were observed to be greater than unity, which indicates the influence of some other current transport mechanism besides thermionic processes. Results indicated ideality factor variation between 9.97 and 9.57 for irradiation times between the ranges 0 to 20 min. Increase in the series resistance with increase in irradiation time was also observed when calculated using conventional and Cheung and Cheung's methods. These responses demonstrate that changes in the electrical characteristics of the metal-semiconductor-metal diode could be further utilized as sensing elements to detect alpha particles.

  19. Electronic Properties of DNA-Based Schottky Barrier Diodes in Response to Alpha Particles

    Directory of Open Access Journals (Sweden)

    Hassan Maktuff Jaber Al-Ta'ii

    2015-05-01

    Full Text Available Detection of nuclear radiation such as alpha particles has become an important field of research in recent history due to nuclear threats and accidents. In this context; deoxyribonucleic acid (DNA acting as an organic semiconducting material could be utilized in a metal/semiconductor Schottky junction for detecting alpha particles. In this work we demonstrate for the first time the effect of alpha irradiation on an Al/DNA/p-Si/Al Schottky diode by investigating its current-voltage characteristics. The diodes were exposed for different periods (0–20 min of irradiation. Various diode parameters such as ideality factor, barrier height, series resistance, Richardson constant and saturation current were then determined using conventional, Cheung and Cheung’s and Norde methods. Generally, ideality factor or n values were observed to be greater than unity, which indicates the influence of some other current transport mechanism besides thermionic processes. Results indicated ideality factor variation between 9.97 and 9.57 for irradiation times between the ranges 0 to 20 min. Increase in the series resistance with increase in irradiation time was also observed when calculated using conventional and Cheung and Cheung’s methods. These responses demonstrate that changes in the electrical characteristics of the metal-semiconductor-metal diode could be further utilized as sensing elements to detect alpha particles.

  20. Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Chawanda, Albert, E-mail: albert.chawanda@up.ac.za [Midlands State University, Bag 9055 Gweru (Zimbabwe); University of Pretoria, 0002 Pretoria (South Africa); Mtangi, Wilbert; Auret, Francois D; Nel, Jacqueline [University of Pretoria, 0002 Pretoria (South Africa); Nyamhere, Cloud [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Diale, Mmantsae [University of Pretoria, 0002 Pretoria (South Africa)

    2012-05-15

    The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V) measurements in the temperature range 140-300 K. The I-V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) ({Phi}{sub B}) increases with the increasing temperature. The I-V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal-semiconductor interface. The zero-bias barrier height {Phi}{sub B} vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of {Phi}{sub B}=0.615 eV and standard deviation {sigma}{sub s0}=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm{sup -2} K{sup -2} and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm{sup -2} K{sup -2}. This may be due to greater inhomogeneities at the interface.

  1. Modeling of 4H—SiC multi-floating-junction Schottky barrier diode

    International Nuclear Information System (INIS)

    Hong-Bin, Pu; Lin, Cao; Zhi-Ming, Chen; Jie, Ren; Ya-Gong, Nan

    2010-01-01

    This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H—SiC multi-floating junction Schottky barrier diode. Considering the charge compensation effects by the multilayer of buried opposite doped regions, it improves the breakdown voltage a lot in comparison with conventional one with the same on-resistance. The forward resistance of the floating junction Schottky barrier diode consists of several components and the electric field can be understood with superposition concept, both are consistent with MEDICI simulation results. Moreover, device parameters are optimized and the analyses show that in comparison with one layer floating junction, multilayer of floating junction layer is an effective way to increase the device performance when specific resistance and the breakdown voltage are traded off. The results show that the specific resistance increases 3.2 mΩ·cm 2 and breakdown voltage increases 422 V with an additional floating junction for the given structure. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. Polycrystalline silicon carbide dopant profiles obtained through a scanning nano-Schottky contact

    International Nuclear Information System (INIS)

    Golt, M. C.; Strawhecker, K. E.; Bratcher, M. S.; Shanholtz, E. R.

    2016-01-01

    The unique thermo-electro-mechanical properties of polycrystalline silicon carbide (poly-SiC) make it a desirable candidate for structural and electronic materials for operation in extreme environments. Necessitated by the need to understand how processing additives influence poly-SiC structure and electrical properties, the distribution of lattice defects and impurities across a specimen of hot-pressed 6H poly-SiC processed with p-type additives was visualized with high spatial resolution using a conductive atomic force microscopy approach in which a contact forming a nano-Schottky interface is scanned across the sample. The results reveal very intricate structures within poly-SiC, with each grain having a complex core-rim structure. This complexity results from the influence the additives have on the evolution of the microstructure during processing. It was found that the highest conductivities localized at rims as well as at the interface between the rim and the core. The conductivity of the cores is less than the conductivity of the rims due to a lower concentration of dopant. Analysis of the observed conductivities and current-voltage curves is presented in the context of nano-Schottky contact regimes where the conventional understanding of charge transport to diode operation is no longer valid.

  3. Modeling and fabrication of 4H-SiC Schottky junction

    Science.gov (United States)

    Martychowiec, A.; Pedryc, A.; Kociubiński, A.

    2017-08-01

    The rapidly growing demand for electronic devices requires using of alternative semiconductor materials, which could replace conventional silicon. Silicon carbide has been proposed for these harsh environment applications (high temperature, high voltage, high power conditions) because of its wide bandgap, its high temperature operation ability, its excellent thermal and chemical stability, and its high breakdown electric field strength. The Schottky barrier diode (SBD) is known as one of the best refined SiC devices. This paper presents prepared model, simulations and description of technology of 4H-SiC Schottky junction as well as characterization of fabricated structures. The future aim of the application of the structures is an optical detection of an ultraviolet radiation. The model section contains a comparison of two different solutions of SBD's construction. Simulations - as a crucial process of designing electronic devices - have been performed using the ATLAS device of Silvaco TCAD software. As a final result the paper shows I-V characteristics of fabricated diodes.

  4. Investigation of temperature dependent barrier height of Au/ZnO/Si schottky diodes

    International Nuclear Information System (INIS)

    Asghar, M.; Mahmood, K.; Rabia, S.; BM, S.; Shahid, M. Y.; Hasan, M. A.

    2013-01-01

    In this study, temperature dependent current-voltage (I-V) measurements have been performed to investigate the inhomogeneity in the temperature dependent barrier heights of Au/ZnO/Si Schottky barrier diode in the temperature range 150 - 400K. The room temperature values for ideality factor and barrier height were found to be 2.9 and 0.60 eV respectively indicating the inhomogenity in the barrier heights of grown samples. The Richardson plot and ideality factor verses barrier height graph were also drawn to verified the discontinuity between Au and ZnO. This barrier height inhomogenity was explained by applying Gaussian distribution model. The extrapolation of the linear Fap (n) plot to n= 1 has given a homogeneous barrier height of approximately 1.1 eV. Fap versus 1/T plot was drawn to obtain the values of mean barrier height for Au/ZnO/Si Schottky diode (1.1 eV) and standard deviation(ds) (0.02 V) at zero bais. (author)

  5. Investigation of temperature dependent barrier height of Au/ZnO/Si schottky diodes

    International Nuclear Information System (INIS)

    Asghar, M; Mahmood, K; Rabia, S; M, Samaa B; Shahid, M Y; Hasan, M A

    2014-01-01

    In this study, temperature dependent current-voltage (I-V) measurements have been performed to investigate the inhomogeneity in the temperature dependent barrier heights of Au/ZnO/Si Schottky barrier diode in the temperature range 150 – 400K. The room temperature values for ideality factor and barrier height were found to be 2.9 and 0.60 eV respectively indicating the inhomogenity in the barrier heights of grown samples. The Richardson plot and ideality factor verses barrier height graph were also drawn to verified the discontinuity between Au and ZnO. This barrier height inhomogenity was explained by applying Gaussian distribution model. The extrapolation of the linear Φ ap (n) plot to n= 1 has given a homogeneous barrier height of approximately 1.1 eV. Φ ap versus 1/T plot was drawn to obtain the values of mean barrier height for Au/ZnO/Si Schottky diode (1.1 eV) and standard deviation(δ s ) (0.02 V) at zero bais

  6. Fabrication of Schottky Junction Between Au and SrTiO3

    Science.gov (United States)

    Inoue, Akira; Izumisawa, Kei; Uwe, Hiromoto

    2001-05-01

    A Schottky junction with a high rectification ratio between Au and La-doped SrTiO3 has been fabricated using a simple surface treatment. Highly La-doped (5%) SrTiO3 single crystals are annealed in O2 atmosphere at about 1000°C for 1 h and etched in HNO3 for more than five min. The HNO3 etching is performed in a globe box containing N2 to prevent pollution from the air. After the treatment, Au is deposited on the SrTiO3 surface in a vacuum (˜ 10-7 Torr) with an e-gun evaporator. The current voltage characteristics of the junction have shown excellent rectification properties, although junctions using neither annealed nor etched SrTiO3 exhibit high leak current in reverse voltage. The rectification ratio of the junction at 1 V is more than six orders of magnitude and there is no hysteresis in the current voltage spectra. The logarithm of the current is linear with the forward bias voltage. The ideal factor of the junction is estimated to be about 1.68. These results suggest that, if prevented from being pollution by the air, a good Schottky junction can be obtained by easy processes such as annealing in oxygen atmosphere and surface etching with acid.

  7. Characterization of plasma etching damage on p-type GaN using Schottky diodes

    International Nuclear Information System (INIS)

    Kato, M.; Mikamo, K.; Ichimura, M.; Kanechika, M.; Ishiguro, O.; Kachi, T.

    2008-01-01

    The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was observed. On the other hand, by capacitance DLTS measurements for n-type GaN, we observed an increase in concentration of a donor-type defect with an activation energy of 0.25 eV after the ICP etching. The origin of this defect would be due to nitrogen vacancies. We also observed this defect by photocapacitance measurements for ICP-etched p-type GaN. For both n- and p-type GaN, we found that the low bias power ICP etching is effective to reduce the concentration of this defect introduced by the high bias power ICP etching

  8. Thermal stability of TaN Schottky contacts on n-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Hayes, J.R.; Kim, D-W.; Meidia, H.; Mahajan, S

    2003-02-07

    The thermal stability and electrical characteristics of tantalum-nitrogen alloy Schottky contacts on n-GaN were investigated. Non-stoichiometric {delta}-phase (40 atomic percent nitrogen) tantalum nitride contacts exhibited good electrical properties up to an annealing temperature of 600 deg. C. However, they degrade rapidly above this temperature due to outward diffusion of Ga and presumably nitrogen into the {delta}-phase tantalum nitride. It is surmised that excess Ta reacts with N at the GaN surface, freeing Ga which then diffuses into the TaN layer. Stoichiometric TaN Schottky contacts were stable at temperatures as high as 800 deg. C and had far superior electrical performance. This stems from the thermodynamic stability of the stoichiometric TaN/GaN interface. {delta}-phase TaN had I-V and C-V barrier heights of 0.55 eV and 0.8 eV respectively. On the other hand, TaN had an I-V barrier height near 0.7 eV and a C-V barrier height near 1.2 eV. The ideality factors for both {delta}-phase TaN and TaN were above 1.8 at all annealing temperatures, suggesting tunneling contributes significantly to current transport.

  9. Features of current-voltage characteristic of nonequilibrium trench MOS barrier Schottky diode

    Science.gov (United States)

    Mamedov, R. K.; Aslanova, A. R.

    2018-06-01

    The trench MOS barrier Schottky diodes (TMBS diode) under the influence of the voltage drop of the additional electric field (AEF) appearing in the near-contact region of the semiconductor are in a nonequilibrium state and their closed external circuit flows currents in the absence of an external voltage. When an external voltage is applied to the TMBS diode, the current transmission is described by the thermionic emission theory with a specific feature. Both forward and reverse I-V characteristics of the TMBS diode consist of two parts. In the initial first part of the forward I-V characteristic there are no forward currents, but reverse saturation currents flow, in its subsequent second part the currents increase exponentially with the voltage. In the initial first part of the reverse I-V characteristic, the currents increase in an abrupt way and in the subsequent second part the saturation currents flow under the action of the image force. The mathematical expressions for forward and reverse I-V characteristic of the TMBS diode and also narrow or nanostructure Schottky diode are proposed, which are in good agreement with the results of experimental and calculated I-V characteristics.

  10. Schottky junctions on perovskite single crystals: light-modulated dielectric constant and self-biased photodetection

    KAUST Repository

    Shaikh, Parvez Abdul Ajij

    2016-08-16

    Schottky junctions formed between semiconductors and metal contacts are ubiquitous in modern electronic and optoelectronic devices. Here we report on the physical properties of Schottky-junctions formed on hybrid perovskite CH3NH3PbBr3 single crystals. It is found that light illumination can significantly increase the dielectric constant of perovskite junctions by 2300%. Furthermore, such Pt/perovskite junctions are used to fabricate self-biased photodetectors. A photodetectivity of 1.4 × 1010 Jones is obtained at zero bias, which increases to 7.1 × 1011 Jones at a bias of +3 V, and the photodetectivity remains almost constant in a wide range of light intensity. These devices also exhibit fast responses with a rising time of 70 μs and a falling time of 150 μs. As a result of the high crystal quality and low defect density, such single-crystal photodetectors show stable performance after storage in air for over 45 days. Our results suggest that hybrid perovskite single crystals provide a new platform to develop promising optoelectronic applications. © 2016 The Royal Society of Chemistry.

  11. Measurements of femtosecond pulse temporal profile by means of a Michelson interferometer with a Schottky junction.

    Science.gov (United States)

    Ling, Yan; Lu, Fang

    2006-12-20

    We introduce a new method for femtosecond pulse shape measurement. The interference of two pulses is employed rather than the second-harmonic generation (SHG). Usually, the measurements of the femtosecond pulse is realized by an interferometer in combination with a nonlinear optical material, while the measurement that we describe is realized by means of a Michelson interferometer with a Schottky junction. Only a metal-semiconductor junction (Schottky junction) is needed, and neither the nonlinear optical material nor a photodetector is included. The two-photon absorption arises when the light is strong enough, while there is only a one-photon absorption when the light is weak. And the calculations are in good agreement with the experimental results. In principle, the new technique could be used for the measuring of pulses with any duration and with very low power. Unlike the SHG scheme, in the new method the quality of optics, mechanics, and other elements of the scheme are not essential, and the measurement is easily realized, but the results are quite precise and very sensitive to the light.

  12. Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection

    Directory of Open Access Journals (Sweden)

    V. Naval

    2010-01-01

    Full Text Available Wide-bandgap semiconductors such as zinc selenide (ZnSe have become popular for ultraviolet (UV photodetectors due to their broad UV spectral response. Schottky barrier detectors made of ZnSe in particular have been shown to have both low dark current and high responsivity. This paper presents the results of electrical and optical characterization of UV sensors based on ZnSe/Ni Schottky diodes fabricated using single-crystal ZnSe substrate with integrated UV-A (320–400 nm and UV-B (280–320 nm filters. For comparison, characteristics characterization of an unfiltered detector is also included. The measured photoresponse showed good discrimination between the two spectral bands. The measured responsivities of the UV-A and UV-B detectors were 50 mA/W and 10 mA/W, respectively. A detector without a UV filter showed a maximum responsivity of about 110 mA/W at 375 nm wavelength. The speed of the unfiltered detector was found to be about 300 kHz primarily limited by the RC time constant determined largely by the detector area.

  13. Frequency dependent capacitance and conductance properties of Schottky diode based on rubrene organic semiconductor

    International Nuclear Information System (INIS)

    Barış, Behzad

    2013-01-01

    Al/rubrene/p-Si Schottky diode has been fabricated by forming a rubrene layer on p type Si by using the spin coating method. The frequency dependent capacitance–voltage (C–V–f) and conductance–voltage (G–V–f) characteristics of Al/rubrene/p-Si Schottky diyotes has been investigated in the frequency range of 5 kHz–500 kHz at room temperature. The C–V plots show a peak for each frequency. The capacitance of the device decreased with increasing frequency. The decrease in capacitance results from the presence of interface states. The plots of series resistance–voltage (R s −V) gave a peak in the depletion region at all frequencies. The density of interface states (N ss ) and relaxation time (τ) distribution profiles as a function of applied voltage bias have been determined from the C–V and G–V measurements. The values of the N ss and τ have been calculated in the ranges of 8.37×10 11 –4.85×10 11 eV −1 cm −2 and 5.17×10 −6 –1.02×10 −5 s, respectively

  14. Frequency dependent capacitance and conductance properties of Schottky diode based on rubrene organic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Barış, Behzad, E-mail: behzadbaris@gmail.com

    2013-10-01

    Al/rubrene/p-Si Schottky diode has been fabricated by forming a rubrene layer on p type Si by using the spin coating method. The frequency dependent capacitance–voltage (C–V–f) and conductance–voltage (G–V–f) characteristics of Al/rubrene/p-Si Schottky diyotes has been investigated in the frequency range of 5 kHz–500 kHz at room temperature. The C–V plots show a peak for each frequency. The capacitance of the device decreased with increasing frequency. The decrease in capacitance results from the presence of interface states. The plots of series resistance–voltage (R{sub s}−V) gave a peak in the depletion region at all frequencies. The density of interface states (N{sub ss}) and relaxation time (τ) distribution profiles as a function of applied voltage bias have been determined from the C–V and G–V measurements. The values of the N{sub ss} and τ have been calculated in the ranges of 8.37×10{sup 11}–4.85×10{sup 11} eV{sup −1} cm{sup −2} and 5.17×10{sup −6}–1.02×10{sup −5} s, respectively.

  15. Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

    Science.gov (United States)

    Tian, He; Tan, Zhen; Wu, Can; Wang, Xiaomu; Mohammad, Mohammad Ali; Xie, Dan; Yang, Yi; Wang, Jing; Li, Lain-Jong; Xu, Jun; Ren, Tian-Ling

    2014-01-01

    Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5–20 cm2/V·s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V·s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics. PMID:25109609

  16. Institutional advantage

    NARCIS (Netherlands)

    Martin, Xavier

    Is there such a thing as institutional advantage—and what does it mean for the study of corporate competitive advantage? In this article, I develop the concept of institutional competitive advantage, as distinct from plain competitive advantage and from comparative institutional advantage. I first

  17. Evolutionary institutionalism.

    Science.gov (United States)

    Fürstenberg, Dr Kai

    Institutions are hard to define and hard to study. Long prominent in political science have been two theories: Rational Choice Institutionalism (RCI) and Historical Institutionalism (HI). Arising from the life sciences is now a third: Evolutionary Institutionalism (EI). Comparative strengths and weaknesses of these three theories warrant review, and the value-to-be-added by expanding the third beyond Darwinian evolutionary theory deserves consideration. Should evolutionary institutionalism expand to accommodate new understanding in ecology, such as might apply to the emergence of stability, and in genetics, such as might apply to political behavior? Core arguments are reviewed for each theory with more detailed exposition of the third, EI. Particular attention is paid to EI's gene-institution analogy; to variation, selection, and retention of institutional traits; to endogeneity and exogeneity; to agency and structure; and to ecosystem effects, institutional stability, and empirical limitations in behavioral genetics. RCI, HI, and EI are distinct but complementary. Institutional change, while amenable to rational-choice analysis and, retrospectively, to criticaljuncture and path-dependency analysis, is also, and importantly, ecological. Stability, like change, is an emergent property of institutions, which tend to stabilize after change in a manner analogous to allopatric speciation. EI is more than metaphorically biological in that institutional behaviors are driven by human behaviors whose evolution long preceded the appearance of institutions themselves.

  18. Institutional entrepreneurship:

    DEFF Research Database (Denmark)

    Gretzinger, Susanne

    2018-01-01

    Institutional entrepreneurship pays specific attention to the process and outcomes of agents who are willing and capable of changing institutions. It has some common ground with the political entrepreneur, a concept that proposes change in norms and institutions because of commitment and activities...... of agents or organisations in the policy arena. The present chapter understands institutional entrepreneurship as the process of changing institutionalised practices. Based on a literature review, it describes the triggers, activities and potential effects of institutional entrepreneurs. The chapter...... concludes by tentatively arguing that political entrepreneurs can be institutional entrepreneurs, but institutional entrepreneurship can be considered as the broader concept that incorporates strategies and visions as well as interpretative-discursive power into the conceptual framework....

  19. Influence of B doping on the carrier transport mechanism and barrier height of graphene/ZnO Schottky contact

    Science.gov (United States)

    Li, Yapeng; Li, Yingfeng; Zhang, Jianhua; Tong, Ting; Ye, Wei

    2018-03-01

    The ZnO films were fabricated on the surface of n-Si(1 1 1) substrate using the sol-gel method, and the graphene was then transferred to its surface for the fabrication of the graphene/ZnO Schottky contact. The results showed that ZnO films presented a strong (0 0 2) preferred direction, and that the particle sizes on the surface decreased as the doping concentration of B ions increased. The electrical properties of the graphene/ZnO Schottky contact were measured by using current-voltage measurements. It was found that the graphene/ZnO Schottky contact showed a fine rectification behavior when the doping concentration of B ions was increased. However, when the doping concentration of the B ions increased to 0.15 mol l-1, the leakage current increased and rectification behavior weakened. This was due to the Fermi level pinning caused by the presence of the O vacancy at the interface of the graphene/ZnO Schottky contact.

  20. Evaluation of Schottky and MgO-based tunnelling diodes with different ferromagnets for spin injection in n-Si

    International Nuclear Information System (INIS)

    Uhrmann, T; Dimopoulos, T; Brueckl, H; Kovacs, A; Kohn, A; Weyers, S; Paschen, U; Smoliner, J

    2009-01-01

    In this work we present the electrical properties of sputter-deposited ferromagnetic (FM) Schottky diodes and MgO-based tunnelling diodes to n-doped (0 0 1) silicon. The effective Schottky barrier height (SBH) has been evaluated as a function of the FM electrode (Co 70 Fe 30 , Co 40 Fe 40 B 20 and Ni 80 Fe 20 ), the silicon doping density (10 15 to 10 18 cm -3 ), the MgO tunnelling barrier thickness (0, 1.5 and 2.5 nm) and post-deposition annealing up to 400 0 C. The ideality factors of the Schottky diodes are close to unity, indicating transport by thermionic emission and the absence of an interfacial oxide layer, which is confirmed by transmission electron microscopy. The effective SBH is found to be approximately 0.65 eV, independent of the FM material and decreasing with increasing doping density. The changes induced by high temperature annealing at the current-voltage characteristic of the Schottky diodes depend strongly on the FM electrode. The effective SBH for the tunnelling diodes is as low as 0.3 eV, which suggests a high density of oxide and interface traps. It is again independent of the FM electrode, decreasing with increasing doping density and annealing temperature. The inclusion of MgO leads to higher thermal stability of the tunnelling diodes. The measured contact resistance values are discussed with respect to the conductivity mismatch for spin injection and detection.

  1. Schottky barrier tuning of the graphene/SnS2 van der Waals heterostructures through electric field

    Science.gov (United States)

    Zhang, Fang; Li, Wei; Ma, Yaqiang; Dai, Xianqi

    2018-03-01

    Combining the electronic structures of two-dimensional monolayers in ultrathin hybrid nanocomposites is expected to display new properties beyond their single components. The effects of external electric field (Eext) on the electronic structures of monolayer SnS2 with graphene hybrid heterobilayers are studied by using the first-principle calculations. It is demonstrated that the intrinsic electronic properties of SnS2 and graphene are quite well preserved due to the weak van der Waals (vdW) interactions. We find that the n-type Schottky contacts with the significantly small Schottky barrier are formed at the graphene/SnS2 interface. In the graphene/SnS2 heterostructure, the vertical Eext can control not only the Schottky barriers (n-type and p-type) but also contact types (Schottky contact or Ohmic contact) at the interface. The present study would open a new avenue for application of ultrathin graphene/SnS2 heterostructures in future nano- and optoelectronics.

  2. Local irradiation effects of one-dimensional ZnO based self-powered asymmetric Schottky barrier UV photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yaxue [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Qi, Junjie, E-mail: junjieqi@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Biswas, Chandan [Department of Electrical Engineering, University of California Los Angeles, California 90095 (United States); Li, Feng; Zhang, Kui; Li, Xin [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Zhang, Yue, E-mail: yuezhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083 (China)

    2015-09-15

    A self-powered metal-semiconductor-metal (MSM) UV photodetector was successfully fabricated based on Ag/ZnO/Au structure with asymmetric Schottky barriers. This exhibits excellent performance compared to many previous studies. Very high photo-to-dark current ratio (approximately 10{sup 5}–10{sup 6}) was demonstrated without applying any external bias, and very fast switching time of less than 30 ms was observed during the investigation. Opposite photocurrent direction was generated by irradiating different Schottky diodes in the fabricated photodetector. Furthermore, the device performance was optimized by largely irradiating both the ZnO microwire (MW) junctions. Schottky barrier effect theory and O{sub 2} adsorption–desorption theories were used to investigate the phenomenon. The device has potential applications in self-powered UV detection field and can be used as electrical power source for electronic, optoelectronic and mechanical devices. - Highlights: • A self-powered Schottky barrier UV photodetector based on 1-D ZnO is fabricated. • For the first time we investigate the local irradiation effects of UV detector. • Irradiating both the junctions and ZnO can optimize the performance of the device.

  3. Phase locking of 2.324 and 2.959 terahertz quantum cascade lasers using a Schottky diode harmonic mixer.

    Science.gov (United States)

    Danylov, Andriy; Erickson, Neal; Light, Alexander; Waldman, Jerry

    2015-11-01

    The 23rd and 31st harmonics of a microwave signal generated in a novel THz balanced Schottky diode mixer were used as a frequency stable reference source to phase lock solid-nitrogen-cooled 2.324 and 2.959 THz quantum cascade lasers. Hertz-level frequency stability was achieved, which was maintained for several hours.

  4. A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

    Science.gov (United States)

    Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.

    2018-01-01

    Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

  5. Ultra-wideband balanced schottky envelope detector for data communication with high bitrate to carrier frequency ratio

    DEFF Research Database (Denmark)

    Granja, Angel Blanco; Cimoli, Bruno; Rodriguez, Sebastian

    2017-01-01

    This paper reports on an ultra-wideband (UWB) Schottky diode based balanced envelope detector for the L-, S-, C- and X- bands. The proposed circuit consists of a balun that splits the input signal into two 180° out of phase signals, a balanced detector, that demodulates the two signals, a low pass...

  6. Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment

    International Nuclear Information System (INIS)

    Kim, Hogyoung; Jung, Chan Yeong; Hyun Kim, Se; Cho, Yunae; Kim, Dong-Wook

    2015-01-01

    Using current–voltage (I–V) measurements, we investigated the effect of oxygen plasma treatment on the temperature-dependent electrical properties of Cu/n-type indium phosphide (InP) Schottky contacts at temperatures in the range 100–300 K. Changes in the electrical parameters were evident below 180 K for the low-plasma-power sample (100 W), which is indicative of the presence of a wider distribution of regions of low barrier height. Modified Richardson plots were used to obtain Richardson constants, which were similar to the theoretical value of 9.4 A cm −2 K −2 for n-type InP. This suggests that, for all the samples, a thermionic emission model including a spatially inhomogeneous Schottky barrier can be used to describe the charge transport phenomena at the metal/semiconductor interface. The voltage dependence of the reverse-bias current revealed that Schottky emission was dominant for the untreated and high-plasma-power (250 W) samples. For the low-plasma-power sample, Poole–Frenkel emission was dominant at low voltages, whereas Schottky emission dominated at higher voltages. Defect states and nonuniformity of the interfacial layer appear to be significant in the reverse-bias charge transport properties of the low-plasma-power sample. (paper)

  7. Tuning the electronic properties and Schottky barrier height of the vertical graphene/MoS2 heterostructure by an electric gating

    Science.gov (United States)

    Nguyen, Chuong V.

    2018-04-01

    In this paper, the electronic properties and Schottky contact in graphene/MoS2 (G/MoS2) heterostructure under an applied electric field are investigated by means of the density functional theory. It can be seen that the electronic properties of the G/MoS2 heterostructure are preserved upon contacting owing to the weak van der Waals interaction. We found that the n-type Schottky contact is formed in the G/MoS2 heterostructure with the Schottky barrier height of 0.49 eV. Furthermore, both Schottky contact and Schottky barrier height in the G/MoS2 heterostructure could be controlled by the applied electric field. If a positive electric field of 4 V/nm is applied to the system, a transformation from the n-type Schottky contact to the p-type one was observed, whereas the system keeps an n-type Schottky contact when a negative electric field is applied. Our results may provide helpful information to design, fabricate, and understand the physics mechanism in the graphene-based two-dimensional van der Waals heterostructures like as G/MoS2 heterostructure.

  8. Antropologia e filosofia: estética e experiência em Clifford Geertz e Walter Benjamin

    Directory of Open Access Journals (Sweden)

    Relivaldo Pinho de Oliveira

    2012-06-01

    Full Text Available Este artigo estuda as concepções de estética e experiência de Clifford Geertz e Walter Benjamin como possibilidades argumentativas e metodológicas para pensar a realidade e suas formas estéticas. Utiliza-se para isso as discussões metodológicas de Geertz, especialmente a respeito do lugar da estética e de sua relação com os demais âmbitos do humano, que encetaram uma nova forma de concebê-los para a etnografia e antropologia de modo geral, e os estudos de Benjamin a respeito da estética como expressão fisionômica de uma época, de determinada realidade, especialmente os que se referem sobre a modernidade. Constata-se essa possibilidade a partir da observação de que a estética e a experiência, nos autores, são tomadas como dimensões da realidade que se relacionam, não de modo mecânico, e sim como âmbitos que atravessam a realidade, os artefatos estéticos, os discursos, e esses assim devem ser observados.This article study the conceptions of aesthetics and experience of Clifford Geertz and Walter Benjamin as argumentative and methodological possibilities for thinking reality and its aesthetic forms. Uses for this Geertz's methodological discussions, especially regarding the place of aesthetics and its relation to other spheres of the human, which has embarked on a new way of conceiving them to ethnography and anthropology in general, and studies Benjamin about the aesthetics and physiognomical expression of an era, a certain reality, especially those concerning about modernity. There is that possibility from the observation that the aesthetics and experience, in the authors, are taken as the dimensions of reality are related, not mechanically, but as areas that cross the reality, the aesthetic artifacts, the speeches, and so these must be observed.

  9. Clima e vegetação natural do estado do Rio Grande do Sul segundo o diagrama climático de Walter e Lieth

    Directory of Open Access Journals (Sweden)

    Galileo Adeli Buriol

    2007-01-01

    Full Text Available The natural vegetation in the State of Rio Grande do Sul was related to climatic availability through the climatic diagram of Walter and Lieth (1967. Values of mean monthly air temperature and rainfall from 41 meteorological stations during the period 1931-1960 were taken into account. For each meteorological station, a graph was plotted with months in the x axis and monthly air temperature and rainfall in the two y axis considering the y axis with rainfall two fold the y axis with air temperature. Results showed that Rio Grande do Sul as a whole fits in the zonobioma of warm humid temperate climate and forest vegetation. These results indicate the phytoclimate model of Walter and Lieth (1967 is not appropriate to represent the geographic distribution of the natural vegetation of the State, because this type of vegetation is not only that which covers the State that because it also parents praises.

  10. Interface feature characterization and Schottky interfacial layer confirmation of TiO{sub 2} nanotube array film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongchao [State Key Laboratory of Powder Metallurgy, Central South University, 410083 Changsha (China); Chongyi Zhangyuan Tungsten Industry Corporation Limited, 341300 Ganzhou (China); Tang, Ningxin; Yang, Hongzhi; Leng, Xian [State Key Laboratory of Powder Metallurgy, Central South University, 410083 Changsha (China); Zou, Jianpeng, E-mail: zoujp@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, 410083 Changsha (China)

    2015-11-15

    Highlights: • Interfacial fusion of TiO{sub 2} nanotube film increases with annealing temperature. • Interface bonding force of the film increases with annealing temperature. • We report the forth stage of nanofibers formation in the growing mechanism. • TiO{sub 2} nanotubes grow from Schottky interface layer rather than from Ti substrate. • Schottky interface layer's thickness of 35–45 nm is half the diameter of nanotube. - Abstract: We report here characterization of the interfacial microstructure and properties of titanium dioxide (TiO{sub 2}) nanotube array films fabricated by anodization. Field effect scanning electron microscopy (FESEM), X-ray diffraction (XRD), nanoindentation, atomic force microscopy (AFM), selected area electron diffraction (SAED), and high-resolution transmission electron microscopy (HRTEM) were used to characterize the interface of the film. With increasing annealing temperature from 200 °C to 800 °C, the interfacial fusion between the film and the Ti substrate increased. The phase transformation of the TiO{sub 2} nanotube film from amorphous to anatase to rutile took place gradually; as the phase transformation progressed, the force needed to break the film increased. The growth of TiO{sub 2} nanotube arrays occurs in four stages: barrier layer formation, penetrating micropore formation, regular nanotube formation, and nanofiber formation. The TiO{sub 2} nanotubes grow from the Schottky interface layer rather than from the Ti substrate. The Schottky interface layer's thickness of 35–45 nm was identified as half the diameter of the corresponding nanotube, which shows good agreement to the Schottky interface layer growth model. The TiO{sub 2} nanotube film was amorphous and the Ti substrate was highly crystallized with many dislocation walls.

  11. Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode

    International Nuclear Information System (INIS)

    Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

    2015-01-01

    We report the current–voltage (I–V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I–V characteristic in the temperature range of 280–400 K. This is to study the effect of temperature on the I–V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A * was 10.32 A·cm −2 ·K −2 , which is close to the theoretical value of 9.4 A·cm −2 ·K −2 for n-InP. The temperature dependence of the I–V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I–V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP. (paper)

  12. Inhomogeneous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode

    Science.gov (United States)

    Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

    2015-12-01

    We report the current-voltage (I-V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I-V characteristic in the temperature range of 280-400 K. This is to study the effect of temperature on the I-V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I-V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A* was 10.32 A·cm-2·K-2, which is close to the theoretical value of 9.4 A·cm-2·K-2 for n-InP. The temperature dependence of the I-V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I-V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP.

  13. The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures.

    Science.gov (United States)

    Su, Jie; Feng, Liping; Zhang, Yan; Liu, Zhengtang

    2016-06-22

    Using first-principles calculations within density functional theory, we systematically studied the effect of BN-MoS2 heterostructure on the Schottky barriers of metal-MoS2 contacts. Two types of FETs are designed according to the area of the BN-MoS2 heterostructure. Results show that the vertical and lateral Schottky barriers in all the studied contacts, irrespective of the work function of the metal, are significantly reduced or even vanish when the BN-MoS2 heterostructure substitutes the monolayer MoS2. Only the n-type lateral Schottky barrier of Au/BN-MoS2 contact relates to the area of the BN-MoS2 heterostructure. Notably, the Pt-MoS2 contact with n-type character is transformed into a p-type contact upon substituting the monolayer MoS2 by a BN-MoS2 heterostructure. These changes of the contact natures are ascribed to the variation of Fermi level pinning, work function and charge distribution. Analysis demonstrates that the Fermi level pinning effects are significantly weakened for metal/BN-MoS2 contacts because no gap states dominated by MoS2 are formed, in contrast to those of metal-MoS2 contacts. Although additional BN layers reduce the interlayer interaction and the work function of the metal, the Schottky barriers of metal/BN-MoS2 contacts still do not obey the Schottky-Mott rule. Moreover, different from metal-MoS2 contacts, the charges transfer from electrodes to the monolayer MoS2, resulting in an increment of the work function of these metals in metal/BN-MoS2 contacts. These findings may prove to be instrumental in the future design of new MoS2-based FETs with ohmic contact or p-type character.

  14. Mediating broadband light into graphene–silicon Schottky photodiodes by asymmetric silver nanospheroids: effect of shape anisotropy

    Science.gov (United States)

    Bhardwaj, Shivani; Parashar, Piyush K.; Roopak, Sangita; Ji, Alok; Uma, R.; Sharma, R. P.

    2018-05-01

    Designing thinner, more efficient and cost-effective 2D materials/silicon Schottky photodiodes using the plasmonic concept is one of the most recent quests for the photovoltaic research community. This work demonstrates the enhanced performance of graphene–Si Schottky junction solar cells by introducing asymmetric spheroidal shaped Ag nanoparticles (NPs) embedded in a graphene monolayer (GML). The optical signatures of these Ag NPs (oblate, ortho-oblate, prolate and ortho-prolate) have been analyzed by discrete dipole approximation in terms of extinction efficiency and surface plasmon resonance tunability, against the quasi-static approximation. The spatial field distribution is enhanced by optimizing the size (a eff  =  100 nm) and aspect ratio (0.4) for all of the utilized Ag NPs with an optimized graphene environment (t  =  0.1 nm). An improvement of photon absorption in the thin Si wafer for the polychromatic spectral region (λ ~ 300–1100 nm) under an AM 1.5 G solar spectrum has been observed. This resulted in a photocurrent enhancement from 7.98 mA cm‑2 to 10.0 mA cm‑2 for oblate-shaped NPs integrated into GML/Si Schottky junction solar cells as compared to the bare cell. The structure used in this study to improve the graphene–Si Schottky junction’s performance is also advantageous for other graphene-like 2D material-based Schottky devices.

  15. Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior

    Science.gov (United States)

    Brezeanu, G.; Pristavu, G.; Draghici, F.; Badila, M.; Pascu, R.

    2017-08-01

    In this paper, a characterization technique for 4H-SiC Schottky diodes with varying levels of metal-semiconductor contact inhomogeneity is proposed. A macro-model, suitable for high-temperature evaluation of SiC Schottky contacts, with discrete barrier height non-uniformity, is introduced in order to determine the temperature interval and bias domain where electrical behavior of the devices can be described by the thermionic emission theory (has a quasi-ideal performance). A minimal set of parameters, the effective barrier height and peff, the non-uniformity factor, is associated. Model-extracted parameters are discussed in comparison with literature-reported results based on existing inhomogeneity approaches, in terms of complexity and physical relevance. Special consideration was given to models based on a Gaussian distribution of barrier heights on the contact surface. The proposed methodology is validated by electrical characterization of nickel silicide Schottky contacts on silicon carbide (4H-SiC), where a discrete barrier distribution can be considered. The same method is applied to inhomogeneous Pt/4H-SiC contacts. The forward characteristics measured at different temperatures are accurately reproduced using this inhomogeneous barrier model. A quasi-ideal behavior is identified for intervals spanning 200 °C for all measured Schottky samples, with Ni and Pt contact metals. A predictable exponential current-voltage variation over at least 2 orders of magnitude is also proven, with a stable barrier height and effective area for temperatures up to 400 °C. This application-oriented characterization technique is confirmed by using model parameters to fit a SiC-Schottky high temperature sensor's response.

  16. Walter Lorenz – Wegbegleiter und Orientierungspunkt in der interkulturellen Sozialen Arbeit

    Directory of Open Access Journals (Sweden)

    2007-05-01

    Full Text Available First meeting, common interests and ways together The European Centre for Social Welfare, Training and Research situated in Vienna, was our first meeting place. W. Lorenz was interested in the international comparison of the different concepts and perspectives of social welfare problems in the European countries and the different developments in the training of social professions in Europe. The challenge of intercultural, antiracist social work in the context of Erasmus-Intensive Seminars To organize an intensive seminar with the aim to train students and colleagues for intercultural and antiracist competence in social professions, we formed an European network of European universities and schools of s.w. in Vienna (VIENNET, with the support of ECCE (European Centre of Community Education in Koblenz. “The group discovered that working on these issues in an international context raises issues of ‘difference’ with renewed acuteness”(cit. W. Lorenz. We learned to cope with a variety of differences: biographical, language, theoretical and institutional backgrounds and discourse traditions. A Venue for an Intensive Seminar In choosing a venue for an Intensive Seminar we were relatively free. We locked for a place, “one dream about”, to support in the best way our seminar aims, to promote a base built on knowledge, skills and values particularly in the area of inner/outer borders, disadvantage, ignorance, minorities, majorities, vulnerable groups, racism and xenophobia. In a small village in Burgenland (Austria, very close to the Hungarian border, we thought to have found it. Future Prospect Are we only representatives of our background institutions or did we act and exposed ourselves as persons with a very specific biography and training experience. Can we sustain this created network, as a network of experts and friends in the field of intercultural, antiracist social work? This question is still open.

  17. "The casual cruelty of our prejudices": on Walter Lippmann's theory of stereotype and its "obliteration" in psychology and social science.

    Science.gov (United States)

    Bottom, William P; Kong, Dejun Tony

    2012-01-01

    Reflecting on his wartime government service, Walter Lippmann (1922) developed a theory of policy formulation and error. Introducing the constructs of stereotype, mental model, blind spots, and the process of manufacturing consent, his theory prescribed interdisciplinary social science as a tool for enhancing policy making in business and government. Lippmann used his influence with the Rockefeller foundations, business leaders, Harvard and the University of Chicago to gain support for this program. Citation analysis of references to "stereotype" and Lippmann reveals the rapid spread of the concept across the social sciences and in public discourse paralleled by obliteration by incorporation of the wider theory in behavioral science. "Stereotype" is increasingly invoked in anthropology, economics, and sociology though Lippmann and his wider theory ceased being cited decades ago. In psychology, citations are increasing but content analysis revealed blind spots and misconceptions about the theory and prescription. Studies of heuristics, biases, and organizational decision substantiate Lippmann's theory of judgment and choice. But his model for social science failed to consider the bounded rationality and blind spots of its practitioners. Policy formulation today is supported by research from narrow disciplinary silos not interdisciplinary science that reflects an awareness of history. © 2012 Wiley Periodicals, Inc.

  18. Monoterpenoids from the traditional North Italian vegetable Aruncus dioicus (Walter) Fernald var. vulgaris (Maxim.) H.Hara (Rosaceae).

    Science.gov (United States)

    Granica, Sebastian; Fusani, Pietro; Stanisławska, Iwona; Piwowarski, Jakub P; Melck, Dominique; Motta, Andrea; Zidorn, Christian

    2017-04-15

    Investigations of young shoots of Aruncus dioicus (Walter) Fernald var. vulgaris (Maxim.) H.Hara (Rosaceae), collected from the wild and used as vegetables in alpine provinces of Italy, yielded eight monoterpenoids. Besides known compounds, aruncin A, aruncide A, and cimicifugolide, five previously undescribed substances, aruncins C, D, and E, and aruncides D and E, were identified. Based on results from the full synthesis of aruncin B, structures of aruncin A and aruncide A were revised. Structures were established by HR mass spectrometry and extensive 1D and 2D NMR spectroscopy and based on data from synthetic aruncin B. An HPLC-DAD-ESI-MS method was developed to investigate the distribution of the monoterpenoids in different organs of Aruncus dioicus var. vulgaris and in aerial parts of A. dioicus var. aethusifolius (H.Lév.) H.Hara [Syn.: Aruncus aethusifolius (H.Lév.) Nakai]. Preliminary bioactivity studies moreover indicated weak cytotoxicity for some of the compounds against human prostrate adenocarcinoma cells. Copyright © 2016 Elsevier Ltd. All rights reserved.

  19. NATURALIZAÇÃO DA DESIGUALDADE NO BRASIL: UM DIÁLOGO COM CARL SCHMITT, WALTER BENJAMIN E GIORGIO AGAMBEN

    Directory of Open Access Journals (Sweden)

    Bruna da Penha de Mendonça Coelho

    2017-10-01

    Full Text Available O artigo estabelece um diálogo entre as teorias de Carl Schmitt, Walter Benjamin e Giorgio Agamben, transpondo-as para a realidade social brasileira. A naturalização da desigualdade constitui marca cruel de nossa sociedade, e a filosofia do direito contribui para uma abordagem jurídica que leva em conta as disparidades sociais. Far-se-á, primeiramente, uma análise do estado de exceção à luz das obras de Benjamin e Agamben. Posteriormente, com Schmitt, a questão da exceção será analisada em conjunto com a decisão política, demonstrando a ligação intrínseca entre direito e política e o reflexo disto no agravamento das desigualdades sociais. Será estabelecida a diferença entre os conceitos de “inimigo”, de Schmitt, e homo sacer, de Agamben, na instauração do estado de exceção e como o conceito de “inimigo” foi desvirtuado com a construção da Teoria do Direito Penal do Inimigo.

  20. Silver-Nanowire-Embedded Transparent Metal-Oxide Heterojunction Schottky Photodetector.

    Science.gov (United States)

    Abbas, Sohail; Kumar, Mohit; Kim, Hong-Sik; Kim, Joondong; Lee, Jung-Ho

    2018-05-02

    We report a self-biased and transparent Cu 4 O 3 /TiO 2 heterojunction for ultraviolet photodetection. The dynamic photoresponse improved 8.5 × 10 4 % by adding silver nanowires (AgNWs) Schottky contact and maintaining 39% transparency. The current density-voltage characteristics revealed a strong interfacial electric field, responsible for zero-bias operation. In addition, the dynamic photoresponse measurement endorsed the effective holes collection by embedded-AgNWs network, leading to fast rise and fall time of 0.439 and 0.423 ms, respectively. Similarly, a drastic improvement in responsivity and detectivity of 187.5 mAW -1 and of 5.13 × 10 9 Jones, is observed, respectively. The AgNWs employed as contact electrode can ensure high-performance for transparent and flexible optoelectronic applications.

  1. Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations

    Science.gov (United States)

    Cheng, Kai; Han, Nannan; Su, Yan; Zhang, Junfeng; Zhao, Jijun

    2017-02-01

    Anode materials play an important role in determining the performance of lithium ion batteries. In experiment, graphene (GR)/metal oxide (MO) composites possess excellent electrochemical properties and are promising anode materials. Here we perform density functional theory calculations to explore the interfacial interaction between GR and MO. Our result reveals generally weak physical interactions between GR and several MOs (including Cu2O, NiO). The Schottky barrier height (SBH) in these metal/semiconductor heterostructures are computed using the macroscopically averaged electrostatic potential method, and the role of interfacial dipole is discussed. The calculated SBHs below 1 eV suggest low contact resistance; thus these GR/MO composites are favorable anode materials for better lithium ion batteries.

  2. Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations.

    Science.gov (United States)

    Cheng, Kai; Han, Nannan; Su, Yan; Zhang, Junfeng; Zhao, Jijun

    2017-02-06

    Anode materials play an important role in determining the performance of lithium ion batteries. In experiment, graphene (GR)/metal oxide (MO) composites possess excellent electrochemical properties and are promising anode materials. Here we perform density functional theory calculations to explore the interfacial interaction between GR and MO. Our result reveals generally weak physical interactions between GR and several MOs (including Cu2O, NiO). The Schottky barrier height (SBH) in these metal/semiconductor heterostructures are computed using the macroscopically averaged electrostatic potential method, and the role of interfacial dipole is discussed. The calculated SBHs below 1 eV suggest low contact resistance; thus these GR/MO composites are favorable anode materials for better lithium ion batteries.

  3. Graphene barristor, a triode device with a gate-controlled Schottky barrier.

    Science.gov (United States)

    Yang, Heejun; Heo, Jinseong; Park, Seongjun; Song, Hyun Jae; Seo, David H; Byun, Kyung-Eun; Kim, Philip; Yoo, InKyeong; Chung, Hyun-Jong; Kim, Kinam

    2012-06-01

    Despite several years of research into graphene electronics, sufficient on/off current ratio I(on)/I(off) in graphene transistors with conventional device structures has been impossible to obtain. We report on a three-terminal active device, a graphene variable-barrier "barristor" (GB), in which the key is an atomically sharp interface between graphene and hydrogenated silicon. Large modulation on the device current (on/off ratio of 10(5)) is achieved by adjusting the gate voltage to control the graphene-silicon Schottky barrier. The absence of Fermi-level pinning at the interface allows the barrier's height to be tuned to 0.2 electron volt by adjusting graphene's work function, which results in large shifts of diode threshold voltages. Fabricating GBs on respective 150-mm wafers and combining complementary p- and n-type GBs, we demonstrate inverter and half-adder logic circuits.

  4. Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate

    Science.gov (United States)

    Choi, J.-H.; Cho, C.-H.; Cha, H.-Y.

    2018-06-01

    Gallium oxide (Ga2O3) based vertical Schottky barrier diodes (SBDs) were designed for high voltage switching applications. Since p-type Ga2O3 epitaxy growth or p-type ion implantation technique has not been developed yet, a field plate structure was employed in this study to maximize the breakdown voltage by suppressing the electric field at the anode edge. TCAD simulation was used for the physical analysis of Ga2O3 SBDs from which it was found that careful attention must be paid to the insulator under the field plate. Due to the extremely high breakdown field property of Ga2O3, an insulator with both high permittivity and high breakdown field must be used for the field plate formation.

  5. Characterization of Schottky barrier diodes fabricated from electrochemical oxidation of {alpha} phase brass

    Energy Technology Data Exchange (ETDEWEB)

    Bond, John W., E-mail: jwb13@le.ac.u [Forensic Research Centre, University of Leicester, Leicester LE1 7 EA (United Kingdom)

    2011-04-01

    By careful selection of chloride ion concentration in aqueous sodium chloride, electrochemical oxidation of {alpha} phase brass is shown to permit fabrication of either p-type copper (I) oxide/metal or n-type zinc oxide/metal Schottky barrier diodes. X-ray photoelectron and Auger electron spectroscopies provide evidence that barrier formation and rectifying qualities depend on the relative surface abundance of copper (I) oxide and zinc oxide. X-ray diffraction of the resulting diodes shows polycrystalline oxides embedded in amorphous oxidation products that have a lower relative abundance than the diode forming oxide. Conventional I/V characteristics of these diodes show good rectifying qualities. When neither of the oxides dominate, the semiconductor/metal junction displays an absence of rectification.

  6. Optical and Electrical Properties of Al/(p)Bi2S3 Schottky Junction

    International Nuclear Information System (INIS)

    Kachari, T.; Wary, G.; Rahman, A.

    2010-01-01

    Thin film Al/(p)Bi 2 S 3 Schottky junctions were prepared by vacuum evaporation under pressure 10 -6 Torr. The p-type Bi 2 S 3 thin films with acceptor concentration (3.36-7.33)x10 16 /cm 3 were obtained by evaporating 'In' along with Bi 2 S 3 powder and then annealing the films at 453K for 5 hours. Different junction-parameters such as ideality factor, barrier height, effective Richardson's constant, short-circuit current, etc. were determined from I-V characteristics. The junctions exhibited rectifying I-V characteristics and also photovoltaic effect. Ideality factor was found to decrease with the increase of temperature. Proper doping, annealing, and hydrogenation are necessary to reduce the series resistance so as to achieve high carrier efficiency. More works are being carried out in this direction.

  7. Upgrade of the LHC Schottky Monitor, Operational Experience and First Results

    CERN Document Server

    Betz, Michael; Lefèvre, Thibaut; Wendt, Manfred

    2016-01-01

    The LHC Schottky system allows the measurement of beam parameters such as tune and chromaticity in an entirely non-invasive way by extracting information from the statistical fluctuations in the incoherent motion of particles. The system was commissioned in 2011 and provided satisfactory beam-parameter measurements during LHC run 1 for lead-ions. However, for protons its usability was substantially limited due to strong interfering signals originating from the coherent motion of the particle bunch. The system has recently been upgraded with optimized travelling-wave pick-ups and an improved 4.8~GHz microwave signal path, with the front-end and the triple down-mixing chain optimized to reduce coherent signals. Design and operational aspects for the complete system are shown and the results from measurements with LHC beams in Run II are presented and discussed.

  8. Untersuchung eines breitbandigen Koaxial-Hohlleiterübergangs für einen Schottky-Strahldiagnosedetektor

    CERN Document Server

    Ehret, M; Wendt, M

    In der vorliegenden Arbeit wurde ein Koaxial-Hohlleiterübergang im Mikrowellenbereich (4.8 GHz) untersucht und verbessert. Diese Kopplung ist eine der Schlüsselstellen des sogenannten „Schottky-Detektors“. Dieser Detektor befindet sich innerhalb des Teilchenbeschleunigers des Large Hadron Colliders am CERN. Während der Arbeit wurden verschiedene Untersuchungen am Detektor durchgeführt und anhand der ermittelten Ergebnisse eine veränderte Kopplerstruktur entwickelt. Diese Struktur wurde zuerst anhand von verschiedenen Modellen in einer elektromagnetischen Feldsimulation überprüft und mit Hilfe verschiedener Algorithmen verifiziert. Im nächsten Schritt wurde ein Testaufbau entwickelt, mit dem eine Überprüfung und eine abschließende Betrachtung der Ergebnisse möglich war. Es konnte gezeigt werden, dass mit der neu entwickelten Struktur die Kopplereigenschaften wesentlich verbessert und die Zielvorgaben sogar deutlich übertroffen wurden.

  9. Measuring size dependent electrical properties from nanoneedle structures: Pt/ZnO Schottky diodes

    International Nuclear Information System (INIS)

    Mao, Shimin; Anderson, Daniel D.; Shang, Tao; Park, Byoungnam; Dillon, Shen J.

    2014-01-01

    This work reports the fabrication and testing of nanoneedle devices with well-defined interfaces that are amenable to a variety of structural and electrical characterization, including transmission electron microscopy. Single Pt/ZnO nanoneedle Schottky diodes were fabricated by a top down method using a combination of electro-polishing, sputtering, and focused ion beam milling. The resulting structures contained nanoscale planar heterojunctions with low ideality factors, the dimensions of which were tuned to study size-dependent electrical properties. The diameter dependence of the Pt/ZnO diode barrier height is explained by a joule heating effect and/or electronic inhomogeneity in the Pt/ZnO contact area

  10. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes

    Science.gov (United States)

    Konishi, Keita; Goto, Ken; Murakami, Hisashi; Kumagai, Yoshinao; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

    2017-03-01

    Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n--Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga2O3 (001) substrate. The specific on-resistance of the Ga2O3 FP-SBD was estimated to be 5.1 mΩ.cm2. Successful field-plate engineering resulted in a high breakdown voltage of 1076 V. A larger-than-expected effective barrier height of 1.46 eV, which was extracted from the temperature-dependent current-voltage characteristics, could be caused by the effect of fluorine atoms delivered in a hydrofluoric acid solution process.

  11. Field plate engineering for GaN-based Schottky barrier diodes

    International Nuclear Information System (INIS)

    Lei Yong; Shi Hongbiao; Lu Hai; Chen Dunjun; Zhang Rong; Zheng Youdou

    2013-01-01

    The practical design of GaN-based Schottky barrier diodes (SBDs) incorporating a field plate (FP) structure necessitates an understanding of their working mechanism and optimization criteria. In this work, the influences of the parameters of FPs upon breakdown of the diode are investigated in detail and the design rules of FP structures for GaN-based SBDs are presented for a wide scale of material and device parameters. By comparing three representative dielectric materials (SiO 2 , Si 3 N 4 and Al 2 O 3 ) selected for fabricating FPs, it is found that the product of dielectric permittivity and critical field strength of a dielectric material could be used as an index to predict its potential performance for FP applications. (semiconductor devices)

  12. High-Sensitivity and Low-Power Flexible Schottky Hydrogen Sensor Based on Silicon Nanomembrane.

    Science.gov (United States)

    Cho, Minkyu; Yun, Jeonghoon; Kwon, Donguk; Kim, Kyuyoung; Park, Inkyu

    2018-04-18

    High-performance and low-power flexible Schottky diode-based hydrogen sensor was developed. The sensor was fabricated by releasing Si nanomembrane (SiNM) and transferring onto a plastic substrate. After the transfer, palladium (Pd) and aluminum (Al) were selectively deposited as a sensing material and an electrode, respectively. The top-down fabrication process of flexible Pd/SiNM diode H 2 sensor is facile compared to other existing bottom-up fabricated flexible gas sensors while showing excellent H 2 sensitivity (Δ I/ I 0 > 700-0.5% H 2 concentrations) and fast response time (τ 10-90 = 22 s) at room temperature. In addition, selectivity, humidity, and mechanical tests verify that the sensor has excellent reliability and robustness under various environments. The operating power consumption of the sensor is only in the nanowatt range, which indicates its potential applications in low-power portable and wearable electronics.

  13. Real Time Management of the AD Schottky/BTF Beam Measurement

    CERN Document Server

    Angoletta, Maria Elena

    2003-01-01

    The AD Schottky and BTF system relies on rapid acquisition and analysis of beam quantisation noise during the AD cycle which is based on an embedded receiver and digital signal processing board hosted in a VME system. The software running in the VME sets up the embedded system and amplifiers, interfaces to the RF and control system, manages the execution speed and sequence constraints with respect to the various operating modes, schedules measurements during the AD cycle and performs post processing taking into account the beam conditions in an autonomous way. The operating modes of the instrument dynamically depend on a detailed configuration, the beam parameters during the AD cycle and optional user interaction. Various subsets of the processed data are available on line and in quasi real time for beam intensity, momentum spread and several spectrum types, which form an important part of AD operation today.

  14. Real time management of the AD Schottky/BTF beam measurement system

    CERN Document Server

    Ludwig, M

    2003-01-01

    The AD Schottky and BTF system relies on rapid acquisition and analysis of beam quantisation noise during the AD cycle which is based on an embedded receiver and digital signal processing board hosted in a VME system. The software running in the VME sets up the embedded system and amplifiers, interfaces to the RF and control system, manages the execution speed and sequence constraints with respect to the various operating modes, schedules measurements during the AD cycle and performs post processing taking into account the beam conditions in an autonomous way. The operating modes of the instrument dynamically depend on a detailed configuration, the beam parameters during the AD cycle and optional user interaction. Various subsets of the processed data are available on line and in quasi real time for beam intensity, momentum spread and several spectrum types, which form an important part of AD operation today.

  15. Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

    International Nuclear Information System (INIS)

    Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

    2015-01-01

    Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

  16. High energy proton irradiation effects on SiC Schottky rectifiers

    International Nuclear Information System (INIS)

    Nigam, S.; Kim, Jihyun; Ren, F.; Chung, G.Y.; MacMillan, M.F.; Dwivedi, R.; Fogarty, T.N.; Wilkins, R.; Allums, K.K.; Abernathy, C.R.; Pearton, S.J.; Williams, J.R.

    2002-01-01

    4H-SiC Schottky rectifiers with dielectric overlap edge termination were exposed to 40 MeV protons at fluences from 5x10 7 -5x10 9 cm -2 . The reverse breakdown voltage decreased from ∼500 V in unirradiated devices to ∼-450 V after the highest proton dose. The reverse leakage current at -250 V was approximately doubled under these conditions. The forward current at -2 V decreased by ∼1% (fluence of 5x10 7 cm -2 ) to ∼42% (fluence of 5x10 9 cm -2 ), while the current at lower biases was increased due to the introduction of defect centers. The ideality factor, on-state resistance, and forward turn-on voltage showed modest increases for fluences of ≤5x10 8 cm -2 , but were more strongly affected (increase of 40%-75%) at the highest dose employed

  17. Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

    Energy Technology Data Exchange (ETDEWEB)

    Seyedi, M. A., E-mail: seyedi@usc.edu; Yao, M.; O' Brien, J.; Dapkus, P. D. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Wang, S. Y. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, California 95064, USA and NASA Ames Research Center, Moffett Field, California 94035 (United States)

    2013-12-16

    We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields <5 nF/cm{sup 2}, which shows a strong possibility for high-speed applications with a broad area device.

  18. Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

    International Nuclear Information System (INIS)

    Seyedi, M. A.; Yao, M.; O'Brien, J.; Dapkus, P. D.; Wang, S. Y.

    2013-01-01

    We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields 2 , which shows a strong possibility for high-speed applications with a broad area device

  19. A simulation study of 6H-SiC Schottky barrier source/drain MOSFET

    International Nuclear Information System (INIS)

    Wang Yuan; Zhang Yimen; Zhang Yuming; Tang Xiaoyan

    2003-01-01

    A novel SiC metal-oxide-semiconductor field-effect transistor (SiC SBSD-MOSFET) with Schottky barrier contacts for source and drain is presented in this paper. This kind of device gives a fabrication advantage of avoiding the steps of ion implantation and annealing at high temperatures of the conventional SiC MOSFET. Also it has no problems of crystal damage caused by ion implantation and low activation rate of implanted atoms. The operational mechanism of this device is analyzed and its characteristics are comparable to the conventional SiC MOSFET from the simulation with MEDICI. The effects of different metal workfunctions, oxide thickness, and gate length on the device performance are discussed

  20. Plasmonic silicon Schottky photodetectors: The physics behind graphene enhanced internal photoemission

    Directory of Open Access Journals (Sweden)

    Uriel Levy

    2017-02-01

    Full Text Available Recent experiments have shown that the plasmonic assisted internal photoemission from a metal to silicon can be significantly enhanced by introducing a monolayer of graphene between the two media. This is despite the limited absorption in a monolayer of undoped graphene ( ∼ π α = 2.3 % . Here we propose a physical model where surface plasmon polaritons enhance the absorption in a single-layer graphene by enhancing the field along the interface. The relatively long relaxation time in graphene allows for multiple attempts for the carrier to overcome the Schottky barrier and penetrate into the semiconductor. Interface disorder is crucial to overcome the momentum mismatch in the internal photoemission process. Our results show that quantum efficiencies in the range of few tens of percent are obtainable under reasonable experimental assumptions. This insight may pave the way for the implementation of compact, high efficiency silicon based detectors for the telecom range and beyond.