WorldWideScience

Sample records for wafer-level cu-cu bonds

  1. Physical mechanisms of Cu-Cu wafer bonding

    International Nuclear Information System (INIS)

    Rebhan, B.

    2014-01-01

    Modern manufacturing processes of complex integrated semiconductor devices are based on wafer-level manufacturing of components which are subsequently interconnected. When compared with classical monolithic bi-dimensional integrated circuits (2D ICs), the new approach of three-dimensional integrated circuits (3D ICs) exhibits significant benefits in terms of signal propagation delay and power consumption due to the reduced metal interconnection length and allows high integration levels with reduced form factor. Metal thermo-compression bonding is a process suitable for 3D interconnects applications at wafer level, which facilitates the electrical and mechanical connection of two wafers even processed in different technologies, such as complementary metal oxide semiconductor (CMOS) and microelectromechanical systems (MEMS). Due to its high electrical conductivity, copper is a very attractive material for electrical interconnects. For Cu-Cu wafer bonding the process requires typically bonding for around 1 h at 400°C and high contact pressure applied during bonding. Temperature reduction below such values is required in order to solve issues regarding (i) throughput in the wafer bonder, (ii) wafer-to-wafer misalignment after bonding and (iii) to minimise thermo-mechanical stresses or device degradation. The aim of this work was to study the physical mechanisms of Cu-Cu bonding and based on this study to further optimise the bonding process for low temperatures. The critical sample parameters (roughness, oxide, crystallinity) were identified using selected analytical techniques and correlated with the characteristics of the bonded Cu-Cu interfaces. Based on the results of this study the impact of several materials and process specifications on the bonding result were theoretically defined and experimentally proven. These fundamental findings subsequently facilitated low temperature (LT) metal thermo-compression Cu-Cu wafer bonding and even room temperature direct

  2. Investigation of Surface Pre-Treatment Methods for Wafer-Level Cu-Cu Thermo-Compression Bonding

    Directory of Open Access Journals (Sweden)

    Koki Tanaka

    2016-12-01

    Full Text Available To increase the yield of the wafer-level Cu-Cu thermo-compression bonding method, certain surface pre-treatment methods for Cu are studied which can be exposed to the atmosphere before bonding. To inhibit re-oxidation under atmospheric conditions, the reduced pure Cu surface is treated by H2/Ar plasma, NH3 plasma and thiol solution, respectively, and is covered by Cu hydride, Cu nitride and a self-assembled monolayer (SAM accordingly. A pair of the treated wafers is then bonded by the thermo-compression bonding method, and evaluated by the tensile test. Results show that the bond strengths of the wafers treated by NH3 plasma and SAM are not sufficient due to the remaining surface protection layers such as Cu nitride and SAMs resulting from the pre-treatment. In contrast, the H2/Ar plasma–treated wafer showed the same strength as the one with formic acid vapor treatment, even when exposed to the atmosphere for 30 min. In the thermal desorption spectroscopy (TDS measurement of the H2/Ar plasma–treated Cu sample, the total number of the detected H2 was 3.1 times more than the citric acid–treated one. Results of the TDS measurement indicate that the modified Cu surface is terminated by chemisorbed hydrogen atoms, which leads to high bonding strength.

  3. Room temperature Cu-Cu direct bonding using surface activated bonding method

    International Nuclear Information System (INIS)

    Kim, T.H.; Howlader, M.M.R.; Itoh, T.; Suga, T.

    2003-01-01

    Thin copper (Cu) films of 80 nm thickness deposited on a diffusion barrier layered 8 in. silicon wafers were directly bonded at room temperature using the surface activated bonding method. A low energy Ar ion beam of 40-100 eV was used to activate the Cu surface prior to bonding. Contacting two surface-activated wafers enables successful Cu-Cu direct bonding. The bonding process was carried out under an ultrahigh vacuum condition. No thermal annealing was required to increase the bonding strength since the bonded interface was strong enough at room temperature. The chemical constitution of the Cu surface was examined by Auger electron spectroscope. It was observed that carbon-based contaminations and native oxides on copper surface were effectively removed by Ar ion beam irradiation for 60 s without any wet cleaning processes. An atomic force microscope study shows that the Ar ion beam process causes no surface roughness degradation. Tensile test results show that high bonding strength equivalent to bulk material is achieved at room temperature. The cross-sectional transmission electron microscope observations reveal the presence of void-free bonding interface without intermediate layer at the bonded Cu surfaces

  4. Wafer level hermetic packaging based on Cu-Sn isothermal solidification technology

    International Nuclear Information System (INIS)

    Cao Yuhan; Luo Le

    2009-01-01

    A novel wafer level bonding method based on Cu-Sn isothermal solidification technology is established. A multi-layer sealing ring and the bonding processing are designed, and the amount of solder and the bonding parameters are optimized based on both theoretical and experimental results. Verification shows that oxidation of the solder layer, voids and the scalloped-edge appearance of the Cu 6 Sn 5 phase are successfully avoided. An average shear strength of 19.5 MPa and an excellent leak rate of around 1.9 x 10 -9 atm cc/s are possible, meeting the demands of MIL-STD-883E. (semiconductor technology)

  5. Low-Temperature Cu-Cu Bonding Using Silver Nanoparticles Fabricated by Physical Vapor Deposition

    Science.gov (United States)

    Wu, Zijian; Cai, Jian; Wang, Junqiang; Geng, Zhiting; Wang, Qian

    2018-02-01

    Silver nanoparticles (Ag NPs) fabricated by physical vapor deposition (PVD) were introduced in Cu-Cu bonding as surface modification layer. The bonding structure consisted of a Ti adhesive/barrier layer and a Cu substrate layer was fabricated on the silicon wafer. Ag NPs were deposited on the Cu surface by magnetron sputtering in a high-pressure environment and a loose structure with NPs was obtained. Shear tests were performed after bonding, and the influences of PVD pressure, bonding pressure, bonding temperature and annealing time on shear strength were assessed. Cu-Cu bonding with Ag NPs was accomplished at 200°C for 3 min under the pressure of 30 MPa without a post-annealing process, and the average bonding strength of 13.99 MPa was reached. According to cross-sectional observations, a void-free bonding interface with an Ag film thickness of around 20 nm was achieved. These results demonstrated that a reliable low-temperature short-time Cu-Cu bonding was realized by the sintering process of Ag NPs between the bonding pairs, which indicated that this bonding method could be a potential candidate for future ultra-fine pitch 3D integration.

  6. Direct, CMOS In-Line Process Flow Compatible, Sub 100 °C Cu-Cu Thermocompression Bonding Using Stress Engineering

    Science.gov (United States)

    Panigrahi, Asisa Kumar; Ghosh, Tamal; Kumar, C. Hemanth; Singh, Shiv Govind; Vanjari, Siva Rama Krishna

    2018-03-01

    Diffusion of atoms across the boundary between two bonding layers is the key for achieving excellent thermocompression Wafer on Wafer bonding. In this paper, we demonstrate a novel mechanism to increase the diffusion across the bonding interface and also shows the CMOS in-line process flow compatible Sub 100 °C Cu-Cu bonding which is devoid of Cu surface treatment prior to bonding. The stress in sputtered Cu thin films was engineered by adjusting the Argon in-let pressure in such a way that one film had a compressive stress while the other film had tensile stress. Due to this stress gradient, a nominal pressure (2 kN) and temperature (75 °C) was enough to achieve a good quality thermocompression bonding having a bond strength of 149 MPa and very low specific contact resistance of 1.5 × 10-8 Ω-cm2. These excellent mechanical and electrical properties are resultant of a high quality Cu-Cu bonding having grain growth between the Cu films across the boundary and extended throughout the bonded region as revealed by Cross-sectional Transmission Electron Microscopy. In addition, reliability assessment of Cu-Cu bonding with stress engineering was demonstrated using multiple current stressing and temperature cycling test, suggests excellent reliable bonding without electrical performance degradation.

  7. Direct, CMOS In-Line Process Flow Compatible, Sub 100 °C Cu-Cu Thermocompression Bonding Using Stress Engineering

    Science.gov (United States)

    Panigrahi, Asisa Kumar; Ghosh, Tamal; Kumar, C. Hemanth; Singh, Shiv Govind; Vanjari, Siva Rama Krishna

    2018-05-01

    Diffusion of atoms across the boundary between two bonding layers is the key for achieving excellent thermocompression Wafer on Wafer bonding. In this paper, we demonstrate a novel mechanism to increase the diffusion across the bonding interface and also shows the CMOS in-line process flow compatible Sub 100 °C Cu-Cu bonding which is devoid of Cu surface treatment prior to bonding. The stress in sputtered Cu thin films was engineered by adjusting the Argon in-let pressure in such a way that one film had a compressive stress while the other film had tensile stress. Due to this stress gradient, a nominal pressure (2 kN) and temperature (75 °C) was enough to achieve a good quality thermocompression bonding having a bond strength of 149 MPa and very low specific contact resistance of 1.5 × 10-8 Ω-cm2. These excellent mechanical and electrical properties are resultant of a high quality Cu-Cu bonding having grain growth between the Cu films across the boundary and extended throughout the bonded region as revealed by Cross-sectional Transmission Electron Microscopy. In addition, reliability assessment of Cu-Cu bonding with stress engineering was demonstrated using multiple current stressing and temperature cycling test, suggests excellent reliable bonding without electrical performance degradation.

  8. Material size effects on crack growth along patterned wafer-level Cu–Cu bonds

    DEFF Research Database (Denmark)

    Tvergaard, Viggo; Niordson, Christian Frithiof; Hutchinson, John W.

    2013-01-01

    together. Crack growth along the bond interface is here studied numerically using finite element analyses. The experiments have shown that plasticity in the Cu films makes a major contribution to the macroscopic interface toughness. To account for the size dependence of the plastic flow a strain gradient...... plasticity model is applied here for the metal. A cohesive zone model is applied to represent the crack growth along the bond between the two Cu films. This cohesive zone model incorporates the effect of higher order stresses in the continuum, such that the higher order tractions on the crack faces decay...... the toughness peak and the subsequent plateau level are highly sensitive to the value of the characteristic material length. A small material length, relative to the thickness of the Cu film, gives high toughness whereas a length comparable to the film thickness gives much reduced crack growth resistance...

  9. Physical mechanisms of copper-copper wafer bonding

    International Nuclear Information System (INIS)

    Rebhan, B.; Hingerl, K.

    2015-01-01

    The study of the physical mechanisms driving Cu-Cu wafer bonding allowed for reducing the bonding temperatures below 200 °C. Metal thermo-compression Cu-Cu wafer bonding results obtained at such low temperatures are very encouraging and suggest that the process is possible even at room temperature if some boundary conditions are fulfilled. Sputtered (PVD) and electroplated Cu thin layers were investigated, and the analysis of both metallization techniques demonstrated the importance of decreasing Cu surface roughness. For an equal surface roughness, the bonding temperature of PVD Cu wafers could be even further reduced due to the favorable microstructure. Their smaller grain size enhances the length of the grain boundaries (observed on the surface prior bonding), acting as efficient mass transfer channels across the interface, and hence the grains are able to grow over the initial bonding interface. Due to the higher concentration of random high-angle grain boundaries, this effect is intensified. The model presented is explaining the microstructural changes based on atomic migration, taking into account that the reduction of the grain boundary area is the major driving force to reduce the Gibbs free energy, and predicts the subsequent microstructure evolution (grain growth) during thermal annealing

  10. Cu Pillar Low Temperature Bonding and Interconnection Technology of for 3D RF Microsystem

    Science.gov (United States)

    Shi, G. X.; Qian, K. Q.; Huang, M.; Yu, Y. W.; Zhu, J.

    2018-03-01

    In this paper 3D interconnects technologies used Cu pillars are discussed with respect to RF microsystem. While 2.5D Si interposer and 3D packaging seem to rely to cu pillars for the coming years, RF microsystem used the heterogeneous chip such as GaAs integration with Si interposers should be at low temperature. The pillars were constituted by Cu (2 micron) -Ni (2 micron) -Cu (3 micron) -Sn (1 micron) multilayer metal and total height is 8 micron on the front-side of the wafer by using electroplating. The wafer backside Cu pillar is obtained by temporary bonding, thinning and silicon surface etching. The RF interposers are stacked by Cu-Sn eutectic bonding at 260 °C. Analyzed the reliability of different pillar bonding structure.

  11. Texturization of diamond-wire-sawn multicrystalline silicon wafer using Cu, Ag, or Ag/Cu as a metal catalyst

    Science.gov (United States)

    Wang, Shing-Dar; Chen, Ting-Wei

    2018-06-01

    In this work, Cu, Ag, or Ag/Cu was used as a metal catalyst to study the surface texturization of diamond-wire-sawn (DWS) multi-crystalline silicon (mc-Si) wafer by a metal-assisted chemical etching (MACE) method. The DWS wafer was first etched by standard HF-HNO3 acidic etching, and it was labeled as AE-DWS wafer. The effects of ratios of Cu(NO3)2:HF, AgNO3:HF, and AgNO3:Cu(NO3)2 on the morphology of AE-DWS wafer were investigated. After the process of MACE, the wafer was treated with a NaF/H2O2 solution. In this process, H2O2 etched the nanostructure, and NaF removed the oxidation layer. The Si {1 1 1} plane was revealed by etching the wafer in a mixture of 0.03 M Cu(NO3)2 and 1 M HF at 55 °C for 2.5 min. These parallel Si {1 1 1} planes replaced some parallel saw marks on the surface of AE-DWS wafers without forming a positive pyramid or an inverted pyramid structure. The main topography of the wafer is comprised of silicon nanowires grown in direction when Ag or Ag/Cu was used as a metal catalyst. When silicon is etched in a mixed solution of Cu(NO3)2, AgNO3, HF and H2O2 at 55 °C with a concentration ratio of [Cu2+]/[Ag+] of 50 or at 65 °C with a concentration ratio of [Cu2+]/[Ag+] of 33, a quasi-inverted pyramid structure can be obtained. The reflectivity of the AE-DWS wafers treated with MACE is lower than that of the multiwire-slurry-sawn (MWSS) mc-Si wafers treated with traditional HF + HNO3 etching.

  12. Bonding in [CuNRR′]4 type clusters

    Institute of Scientific and Technical Information of China (English)

    WANG Bingwu; XU Guangxian; CHEN Zhida

    2004-01-01

    Many polynuclear Cu(I) compounds have been synthesized, but the problem whether there is direct or no direct Cu-Cu bonding in these compounds is not clear. The electronic structure of [CuNRR′]4 type clusters was investigated by using density functional methods. The results of geometrical optimization are in good agreement with experiment, and the localization of MO's shows that there are four Cu-Cu ( bonds to form the square Cu4 ring in addition to the four bridging Cu-N-Cu bonds. A concept of the covalence of molecular fragments is proposed to describe the bonding in these clusters.

  13. Wafer-level hermetic vacuum packaging by bonding with a copper-tin thin film sealing ring

    Science.gov (United States)

    Akashi, Teruhisa; Funabashi, Hirofumi; Takagi, Hideki; Omura, Yoshiteru; Hata, Yoshiyuki

    2018-04-01

    A wafer-level hermetic vacuum packaging technology intended for use with MEMS devices was developed based on a copper-tin (CuSn) thin film sealing ring. To allow hermetic packaging, the shear strength of the CuSn thin film bond was improved by optimizing the pretreatment conditions. As a result, an average shear strength of 72.3 MPa was obtained and a cavity that had been hermetically sealed using wafer-level packaging (WLP) maintained its vacuum for 1.84 years. The total pressures in the cavities and the partial pressures of residual gases were directly determined with an ultra-low outgassing residual gas analyzer (RGA) system. Hermeticity was evaluated based on helium leak rates, which were calculated from helium pressures determined with the RGA system. The resulting data showed that a vacuum cavity following 1.84 years storage had a total pressure of 83.1 Pa, contained argon as the main residual gas and exhibited a helium leak rate as low as 1.67  ×  10-17 Pa · m3 s-1, corresponding to an air leak rate of 6.19  ×  10-18 Pa · m3 s-1. The RGA data demonstrate that WLP using a CuSn thin film sealing ring permits ultra-high hermeticity in conjunction with long-term vacuum packaging that is applicable to MEMS devices.

  14. Effect of Bonding Pressure and Bonding Time on the Tensile Properties of Cu-Foam / Cu-Plate Diffusion Bonded Joint

    International Nuclear Information System (INIS)

    Kim, Sang-Ho; Heo, Hoe-Jun; Kang, Chung-Yun; Yoon, Tae-Jin

    2016-01-01

    Open cell Cu foam, which has been widely utilized in various industries because of its high thermal conductivity, lightweight and large surface area, was successfully joined with Cu plate by diffusion bonding. To prevent excessive deformation of the Cu foam during bonding process, the bonding pressure should be lower than 500 kPa at 800 ℃ for 60 min and bonding pressure should be lowered with increasing holding time. The bonding strength was evaluated by tensile tests. The tensile load of joints increased with the bonding pressure and holding time. In the case of higher bonding pressure or time, the bonded length at the interface was usually longer than the cross-sectional length of the foam, so fracture occurred at the foam. For the same reason, base metal (foam) fracture mainly occurred at the node-plate junction rather than in the strut-plate junction because the bonded surface area of the node was relatively larger than that of the strut.

  15. The Pd distribution and Cu flow pattern of the Pd-plated Cu wire bond and their effect on the nanoindentation

    International Nuclear Information System (INIS)

    Lin, Yu-Wei; Wang, Ren-You; Ke, Wun-Bin; Wang, I-Sheng; Chiu, Ying-Ta; Lu, Kuo-Chang; Lin, Kwang-Lung; Lai, Yi-Shao

    2012-01-01

    Highlights: ► Pd distribution in Pd-plated Cu wires reveals the whirlpool flow pattern of Cu. ► The mechanisms of the Cu flow behavior and Pd distribution are proposed. ► At Pd-rich phases, small voids formed and followed the direction of Cu flow. ► Nanoindentation studies show the Cu ball bond is harder in regions with Pd. - Abstract: The Pd plating on the 20 μm Cu wire dissolves in the free air ball (FAB) and the Cu ball bond during the wire bonding process without forming intermetallic compounds. The limiting supply of Pd and the short bonding process, 15 ms of thermosonic bonding, result in uneven distribution of Pd in the as produced Cu ball bond. Also, the Pd-rich phase may accompany small voids formed within the FAB and the wire bond, and following the direction of semi-solid Cu flow. The Pd distribution, as evidenced by the focused ion beam (FIB) and wavelength dispersive X-ray spectroscopy (WDS) mapping, reveals the whirlpool flow pattern of Cu within the FAB and the ball bond. Pd distributes within the copper ball through convective transport by the copper flow. Additionally, hardness measurements by nanoindentation testing show that the Cu ball bond is harder in the regions where Pd exists.

  16. Ultrasonic friction power during thermosonic Au and Cu ball bonding

    International Nuclear Information System (INIS)

    Shah, A; Mayer, M; Zhou, Y; Qin, I; Huynh, C; Meyer, M

    2010-01-01

    The ultrasonic friction power during thermosonic ball bonding with Au and Cu wires, both 25 μm in diameter, is derived with an improved method from experimental measurements during the bonding process. Experimental data include the current delivered to the ultrasonic transducer and the tangential force measured using piezoresistive microsensors integrated close to the Al bonding pad. The improvement results from a new, more accurate method to derive the mechanical compliance of the ultrasonic system. The method employs a bond process modification in which the ultrasonic current is ramped up sequentially in three steps. In the first two steps, the ultrasonic current is set to levels that are too low to cause sliding. The bonding takes place during the third step, when the current is ramped up to the optimum value required for making good quality bonds. The ultrasonic compliance values are derived from the first two steps and are 8.2 ± 0.5 μm N -1 and 7.7 ± 0.5 μm N -1 for the Au and Cu processes, respectively. These values are determined within an average error estimate of ±6%, substantially lower than the ±10% estimated with a previously reported method. The ultrasonic compliance in the case of Au is 6% higher due to the lower elastic modulus of Au compared with that of Cu. Typical maximum values of relative sliding amplitude of ultrasonic friction at the interface are 655 nm and 766 nm for the Au and Cu processes. These values are 81% of the free-air vibration amplitude of the bonding capillary tip for the respective ultrasonic current settings. Due to bond growth, which damps relative motion between the ball and the pad, the final relative amplitude at the bond interface is reduced to 4% of the equivalent free-air amplitude. Even though the maximum value of relative amplitude is 17% higher in the Cu process compared with the Au process, the average total interfacial sliding is 519 μm in the Cu process, which is 31% lower than that in the Au process (759

  17. Molecular dynamics simulation of diffusion bonding of Al–Cu interface

    International Nuclear Information System (INIS)

    Li, Chang; Li, Dongxu; Tao, Xiaoma; Chen, Hongmei; Ouyang, Yifang

    2014-01-01

    The effects of temperature on diffusion bonding of Al–Cu interface have been investigated by using molecular dynamics (MD) technique with the embedded atomic method (EAM) potentials. The simulated results indicate that the Cu atoms predominantly diffuse into the Al side in the process of diffusion bonding, and the thickness of the interfacial region depends on temperature, with higher temperatures resulting in larger thickness. In the course of diffusion bonding, the interfacial region became disordered. In addition, the Cu atoms diffuse at low ratios but can deeply diffuse into the interior of Al, and the Al atoms diffuse at high ratios but hardly diffuse into the interior of Cu. The results show that the appropriate temperature range for diffusion bonding of Al–Cu interface is 750–800 K, and the diffusion activation energies of Al and Cu are 0.77 eV and 0.50 eV, respectively. Finally, in this work, three diffusion mechanisms of Cu atoms in Al lattice have been found and the main diffusion mechanism is the nearest neighbor hopping mechanism. (paper)

  18. Strength and reliability of low temperature transient liquid phase bonded Cu-Sn-Cu interconnects

    DEFF Research Database (Denmark)

    Brincker, Mads; Söhl, Stefan; Eisele, Ronald

    2017-01-01

    As power electronic devices have tendencies to operate at higher temperatures and current densities, the demand for reliable and efficient packaging technologies are ever increasing. This paper reports the studies on application of transient liquid phase (TLP) bonding of CuSnCu systems...

  19. Behavior of palladium and its impact on intermetallic growth in palladium-coated Cu wire bonding

    International Nuclear Information System (INIS)

    Xu Hui; Qin, Ivy; Clauberg, Horst; Chylak, Bob; Acoff, Viola L.

    2013-01-01

    This paper describes the behavior of palladium in palladium-coated Cu (PdCu) wire bonding and its impact on bond reliability by utilizing transmission electron microscopy (TEM). A Pd layer approximately 80 nm thick, which is coated on the surface of Cu wire, dissolves into the Cu matrix during ball formation (under N 2 gas protection) when the wire tip is melted to form a ball. As a result of dissolving the very thin Pd layer into the ball, Pd is almost undetectable along the entire bond interface between the ball and the Al pad. The behavior of Pd during thermal aging in air, however, is different for central and peripheral interfaces. At the central interface, less than 5 at.% Pd is present after 168 h aging at 175 °C. At the periphery, however, Pd diffuses back and congregates, reaching a level of ∼12 at.% after 24 h, and a Pd-rich (Cu,Pd) 9 Al 4 layer (>40 at.% Pd) forms after 168 h. Pd acts substitutionally in Cu 9 Al 4 but cannot penetrate into the CuAl 2 or CuAl. By comparison of intermetallic thickness and interfacial morphology between PdCu and bare Cu wire bonds, it is concluded that the presence of Pd reduces intermetallic growth rate, and is associated with numerous nanovoids in PdCu bonds.

  20. Optimized ultra-thin manganin alloy passivated fine-pitch damascene compatible bump-less Cu-Cu bonding at sub 200 °C for three-dimensional Integration applications

    Science.gov (United States)

    Panigrahi, Asisa Kumar; Hemanth Kumar, C.; Bonam, Satish; Ghosh, Tamal; Rama Krishna Vanjari, Siva; Govind Singh, Shiv

    2018-02-01

    Enhanced Cu diffusion, Cu surface passivation, and smooth surface at the bonding interface are the key essentials for high quality Cu-Cu bonding. Previously, we have demonstrated optimized 3 nm thin Manganin metal-alloy passivation from oxidation and also helps to reduce the surface roughness to about 0.8 nm which substantially led to high quality Cu-Cu bonding. In this paper, we demonstrated an ultra fine-pitch (indication of high quality bonding for future multilayer integrations. Furthermore, electrical characterization of the bonded structure was performed under various robust conditions as per International Technology Roadmap for Semiconductors (ITRS Roadmap) in order to satisfy the stability of the bonded structure.

  1. IR and TPD studies of the interaction of alkenes with Cu + sites in CuNaY and CuNaX zeolites of various Cu content. The heterogeneity of Cu + sites

    Science.gov (United States)

    Datka, J.; Kukulska-Zajaç, E.; Kozyra, P.

    2006-08-01

    Cu + ions in zeolites activate organic molecules containing π electrons by π back donation, which results in a distinct weakening of multiple bonds. In this study, we followed the activation of alkenes (ethene and propene) by Cu + ions in CuY and CuX zeolites of various Cu content. We also studied the strength of bonding of alkenes to Cu + ions. IR studies have shown that there are two kinds of Cu + sites of various electron donor properties. We suppose that they could be attributed to the presence of Cu + ions of various number of oxygen atoms surrounding the cation. IR studies have shown that Cu ions introduced into Y and X zeolites in the first-order (at low Cu content) form Cu + ions of stronger electron donor properties (i.e. activate alkenes to larger extend) than Cu ions introduced in the next order (at higher Cu content). IR and TPD studies of alkenes desorption evidenced that Cu + ions of stronger electron donor properties bond alkenes stronger than less electron donor ones. It suggests that π back donation has more important contribution to the strength of bonding alkenes to cation than π donation.

  2. Behavior of aluminum oxide, intermetallics and voids in Cu-Al wire bonds

    International Nuclear Information System (INIS)

    Xu, H.; Liu, C.; Silberschmidt, V.V.; Pramana, S.S.; White, T.J.; Chen, Z.; Acoff, V.L.

    2011-01-01

    Nanoscale interfacial evolution in Cu-Al wire bonds during isothermal annealing from 175 deg. C to 250 deg. C was investigated by high resolution transmission electron microscopy (HRTEM). The native aluminum oxide film (∼5 nm thick) of the Al pad migrates towards the Cu ball during annealing. The formation of intermetallic compounds (IMC) is controlled by Cu diffusion, where the kinetics obey a parabolic growth law until complete consumption of the Al pad. The activation energies to initiate crystallization of CuAl 2 and Cu 9 Al 4 are 60.66 kJ mol -1 and 75.61 kJ mol -1 , respectively. During IMC development, Cu 9 Al 4 emerges as a second layer and grows together with the initial CuAl 2 . When Al is completely consumed, CuAl 2 transforms to Cu 9 Al 4 , which is the terminal product. Unlike the excessive void growth in Au-Al bonds, only a few voids nucleate in Cu-Al bonds after long-term annealing at high temperatures (e.g., 250 o C for 25 h), and their diameters are usually in the range of tens of nanometers. This is due to the lower oxidation rate and volumetric shrinkage of Cu-Al IMC compared with Au-Al IMC.

  3. Safe-by-Design CuO Nanoparticles via Fe-Doping, Cu-O Bond Length Variation, and Biological Assessment in Cells and Zebrafish Embryos.

    Science.gov (United States)

    Naatz, Hendrik; Lin, Sijie; Li, Ruibin; Jiang, Wen; Ji, Zhaoxia; Chang, Chong Hyun; Köser, Jan; Thöming, Jorg; Xia, Tian; Nel, Andre E; Mädler, Lutz; Pokhrel, Suman

    2017-01-24

    The safe implementation of nanotechnology requires nanomaterial hazard assessment in accordance with the material physicochemical properties that trigger the injury response at the nano/bio interface. Since CuO nanoparticles (NPs) are widely used industrially and their dissolution properties play a major role in hazard potential, we hypothesized that tighter bonding of Cu to Fe by particle doping could constitute a safer-by-design approach through decreased dissolution. Accordingly, we designed a combinatorial library in which CuO was doped with 1-10% Fe in a flame spray pyrolysis reactor. The morphology and structural properties were determined by XRD, BET, Raman spectroscopy, HRTEM, EFTEM, and EELS, which demonstrated a significant reduction in the apical Cu-O bond length while simultaneously increasing the planar bond length (Jahn-Teller distortion). Hazard screening was performed in tissue culture cell lines and zebrafish embryos to discern the change in the hazardous effects of doped vs nondoped particles. This demonstrated that with increased levels of doping there was a progressive decrease in cytotoxicity in BEAS-2B and THP-1 cells, as well as an incremental decrease in the rate of hatching interference in zebrafish embryos. The dissolution profiles were determined and the surface reactions taking place in Holtfreter's solution were validated using cyclic voltammetry measurements to demonstrate that the Cu + /Cu 2+ and Fe 2+ /Fe 3+ redox species play a major role in the dissolution process of pure and Fe-doped CuO. Altogether, a safe-by-design strategy was implemented for the toxic CuO particles via Fe doping and has been demonstrated for their safe use in the environment.

  4. Microstructural evaluation of interfacial intermetallic compounds in Cu wire bonding with Al and Au pads

    International Nuclear Information System (INIS)

    Kim, Hyung Giun; Kim, Sang Min; Lee, Jae Young; Choi, Mi Ri; Choe, Si Hyun; Kim, Ki Hong; Ryu, Jae Sung; Kim, Sangshik; Han, Seung Zeon; Kim, Won Yong; Lim, Sung Hwan

    2014-01-01

    A comparative study on the difference in interfacial behavior of thermally aged Cu wire bonding with Al and Au pads was conducted using transmission electron microscopy. During high-temperature lifetime testing of Cu wire bonding with Al and Au pads at 175 °C for up to 2000 h, different growth rates and growth characteristics were investigated in the Cu–Al intermetallic compounds (IMCs), including CuAl 2 , CuAl and Cu 9 Al 4 , and in the Cu–Au IMCs, including (Au,Cu), Cu 3 Au and (Cu,Au). Because of the lower growth rates and greater ductility of Cu–Au IMCs compared to those of Cu–Al IMCs, the Cu wire bonding with the Au pad showed relatively better thermal aging properties of bond pull strength and ball shear strength than those with the Al pad counterpart. In this study, the coherent interfaces were found to retard the growth of IMCs, and a variety of orientation relationships between wire, pad and interfacial IMCs were identified

  5. Mechanical properties of intermetallics formed during thermal aging of Cu-Al ball bonds

    NARCIS (Netherlands)

    Kouters, M.H.M.; Gubbels, G.H.M.; O'Halloran, O.; Rongen, R.; Weltevreden, E.R.

    2011-01-01

    In high power automotive electronics copper wire bonding is regarded as most promising alternative for gold wire bonding in 1st level interconnects and therefore subjected to severe functional requirements. In the Cu-Al ball bond interface the growth of intermetallic compounds may deteriorate the

  6. Characteristics of chemical bond and vacancy formation in chalcopyrite-type CuInSe2 and related compounds

    International Nuclear Information System (INIS)

    Maeda, Tsuyoshi; Wada, Takahiro

    2009-01-01

    We studied characteristics of chemical bond and vacancy formation in chalcopyrite-type CuInSe 2 (CIS) by first principles calculations. The chalcopyrite-type CIS has two kinds of chemical bonds, Cu-Se and In-Se. The Cu-Se bond is a weak covalent bonding because electrons occupy both bonding and antibonding orbitals of Cu 3d and Se 4p and occupy only the bonding orbital (a 1 ) of Cu 4s and Se 4p and do not occupy the antibonding orbital (a 1 * ) of Cu 4s and Se 4p. On the other hand, the In-Se bond has a partially covalent and partially ionic character because the In 5s orbital covalently interacts with Se 4p; the In 5p orbital is higher than Se 4p and so the electron in the In 5p orbital moves to the Se 4p orbital. The average bond order of the Cu-Se and In-Se bonds can be calculated to be 1/4 and 1, respectively. The bond order of Cu-Se is smaller than that of In-Se. The characteristics of these two chemical bonds are related to the formation of Cu and In vacancies in CIS. The formation energy of the Cu vacancy is smaller than that of the In vacancy under both Cu-poor and In-poor conditions. The displacement (Δl) of the surrounding Se atoms after the formation of the Cu vacancy is smaller than the Δl after the formation of the In vacancy. The interesting and unique characteristics of CIS are discussed on the basis of the characteristics of the chemical bond. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Cost-Efficient Wafer-Level Capping for MEMS and Imaging Sensors by Adhesive Wafer Bonding

    Directory of Open Access Journals (Sweden)

    Simon J. Bleiker

    2016-10-01

    Full Text Available Device encapsulation and packaging often constitutes a substantial part of the fabrication cost of micro electro-mechanical systems (MEMS transducers and imaging sensor devices. In this paper, we propose a simple and cost-effective wafer-level capping method that utilizes a limited number of highly standardized process steps as well as low-cost materials. The proposed capping process is based on low-temperature adhesive wafer bonding, which ensures full complementary metal-oxide-semiconductor (CMOS compatibility. All necessary fabrication steps for the wafer bonding, such as cavity formation and deposition of the adhesive, are performed on the capping substrate. The polymer adhesive is deposited by spray-coating on the capping wafer containing the cavities. Thus, no lithographic patterning of the polymer adhesive is needed, and material waste is minimized. Furthermore, this process does not require any additional fabrication steps on the device wafer, which lowers the process complexity and fabrication costs. We demonstrate the proposed capping method by packaging two different MEMS devices. The two MEMS devices include a vibration sensor and an acceleration switch, which employ two different electrical interconnection schemes. The experimental results show wafer-level capping with excellent bond quality due to the re-flow behavior of the polymer adhesive. No impediment to the functionality of the MEMS devices was observed, which indicates that the encapsulation does not introduce significant tensile nor compressive stresses. Thus, we present a highly versatile, robust, and cost-efficient capping method for components such as MEMS and imaging sensors.

  8. In Situ Study of Reduction Process of CuO Paste and Its Effect on Bondability of Cu-to-Cu Joints

    Science.gov (United States)

    Yao, Takafumi; Matsuda, Tomoki; Sano, Tomokazu; Morikawa, Chiaki; Ohbuchi, Atsushi; Yashiro, Hisashi; Hirose, Akio

    2018-04-01

    A bonding method utilizing redox reactions of metallic oxide microparticles achieves metal-to-metal bonding in air, which can be alternative to lead-rich high-melting point solder. However, it is known that the degree of the reduction of metallic oxide microparticles have an influence on the joint strength using this bonding method. In this paper, the reduction behavior of CuO paste and its effect on Cu-to-Cu joints were investigated through simultaneous microstructure-related x-ray diffraction and differential scanning calorimetry measurements. The CuO microparticles in the paste were gradually reduced to submicron Cu2O particles at 210-250°C. Subsequently, Cu nanoparticles were generated instantaneously at 300-315°C. There was a marked difference in the strengths of the joints formed at 300°C and 350°C. Thus, the Cu nanoparticles play a critical role in sintering-based bonding using CuO paste. Furthermore, once the Cu nanoparticles have formed, the joint strength increases with higher bonding temperature (from 350°C to 500°C) and pressure (5-15 MPa), which can exceed the strength of Pb-5Sn solder at higher temperature and pressure.

  9. High-strength high-conductivity Cu-Nb microcomposite sheet fabricated via multiple roll bonding

    International Nuclear Information System (INIS)

    Jha, S.C.; Delagi, R.G.; Forster, J.A.; Krotz, P.D.

    1993-01-01

    Copper-niobium microcomposites are a new class of high-strength high-conductivity materials that have attractive properties for room- and elevated-temperature applications. Since Nb has little solid solubility in Cu, addition of Nb to Cu does not affect its conductivity. Copper-niobium microcomposites are melted and cast so that the microstructure of cast Cu-Nb ingots consists of 1- to 10 μm Nb dendrites uniformly distributed within the copper matrix. Extensive wire drawing with a true processing strain (η> 12) of Cu-Nb alloy leads to refinement and elongation of Nb dendrites into 1- to 10 nm-thick filaments. The presence of such fine Nb filaments causes a significant increase in the strength of Cu-Nb wires. The tensile strength of heavily drawn Cu-Nb wires was determined to be significantly higher than the values predicted by the rule of mixtures. This article reports the fabrication of high-strength Cu-Nb microcomposite sheet by multiple roll bonding. It is difficult and impractical to attain high processing strains (η>3) by simple cold rolling. In most practical cold-rolling operation, the thickness reduction does not exceed 90 pct (η ≅2). Therefore, innovative processing is required to generate high strength in Cu-Nb microcomposite sheet. Multiple roll bonding of Cu-Nb has been utilized to store high processing strain ( η>10) in the material and refine the Nb particle size within the copper matrix. This article describes the microstructure, mechanical properties, and thermal stability of roll-bonded Cu-Nb microcomposite sheet

  10. Atomic bonding of precipitate and phase transformation of Al-Cu-Mg alloy

    International Nuclear Information System (INIS)

    Gao Yingjun; Hou Xianhua; Mo Qifeng; Wei Chengyang; Qin Xiaobing

    2007-01-01

    Atomic bonding of the GPB zone and S'' phase of Al-Cu-Mg alloys in early aging stage are calculated using the empirical electron theory (EET) in solid. The results show that not only the covalence bond-network is very strong in GPB zone, but the whole covalence bond energy of S'' phase is also very large, and all the primary bond-net framework of these precipitates can consolidate the matrix of alloy. Phase transformation from GPB zone to S'' phase is explained reasonably based on atomic bonding and total binding capacity of Al and Cu atoms in these precipitates

  11. Characterization of intermetallic compounds in Cu-Al ball bonds: layer growth, mechanical properties and oxidation

    NARCIS (Netherlands)

    Kouters, M.H.M.; Gubbels, G.H.M.; O'Halloran, O.; Rongen, R.

    2011-01-01

    In high power automotive electronics copper wire bonding is regarded as most promising alternative for gold wire bonding in 1 st level interconnects and therefore subjected to severe functional requirements. In the Cu-Al ball bond interface the growth of intermetallic compounds may deteriorate the

  12. Development of bonding techniques for cryogenic components (2). HIP bonding between Cu Alloys and Ti, cryogenic stainless steels

    Energy Technology Data Exchange (ETDEWEB)

    Saito, Shigeru; Ouchi, Nobuo [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Fukaya, Kiyoshi [Nihon Advanced Technology Ltd., Tokai, Ibaraki (Japan); Ishiyama, Shintaro [Japan Atomic Energy Research Inst., Oarai, Ibaraki (Japan). Oarai Research Establishment; Tsuchiya, Yoshinori; Nakajima, Hideo [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment

    2003-03-01

    Several joints between dissimilar materials are required in the superconducting (SC) magnet system of SC linear accelerator or fusion reactor, Pure titanium (Ti) is one of candidate materials for a jacket of SC coil of fusion reactor because Ti is non-magnetic material and has a feature that its thermal expansion is similar to SC material in addition to good corrosion resistance and workability. Also, Ti does not require strict control of environment during reaction heat treatment of SC material. Copper (Cu) or Cu-alloy is used in electrical joints and cryogenic stainless steel (SS) is used in cryogenic pipes. Therefore, it is necessary to develop new bonding techniques for joints between Ti, Cu, and SS because jacket, electrical joint and cryogenic pipe have to be bonded each other to cool SC coils. Japan Atomic Energy Research Institute (JAERI) has started to develop dissimilar material joints bonded by hot isostatic pressing (HIP), which can bring a high strength joint with good tolerance and can applied to a large or complex geometry device. HIP conditions for Cu-Ti, Cu alloy-Ti, Cu alloy-SS were investigated in this study and most stable HIP condition were evaluated by microscopic observation, tensile and bending tests at room temperature. (author)

  13. Development of bonding techniques of W and Cu-alloys for plasma facing components of fusion reactor with HIP method

    International Nuclear Information System (INIS)

    Saito, S.; Fukaya, K.; Ishiyama, S.; Eto, M.; Sato, K.; Akiba, M.

    1998-01-01

    W (tungsten) and Cu (copper)-alloys, like oxygen free high thermal conductivity (OFHC)-copper or dispersion strengthened (DS)-copper, are candidate materials for plasma facing components(PFC) of TOKAMAK type fusion reactor as armor tile and heat sink, respectively. However, PFC are exposed to cyclic high heat load and heavy irradiation by 14 MeV neutrons. Under these conditions, thermal stresses at bonding interface and irradiation damage will decrease the bonding strength between W and Cu alloys. Therefore, it is necessary to develop a reliable bonding techniques in order to make PFC with enough integrity. We have applied the hot isostatic press (HIP) method to bond W with Cu-alloys. In this experiments, to optimize HIP bonding conditions, four point bending tests were performed for different bonding conditions at temperatures from R.T. to 873 K and we obtained an optimum HIP bonding condition for W and OFHC-Cu as 1273 SK x 2 hours x 98 ∼ 147 MPa. Tensile tests were also performed at the same temperature range. The tensile strength of the bonded W / Cu was almost equal to that of OFHC Cu which was HIPed at the same conditions. Tensile specimens were broken at the bonding interface or OFHC-Cu side. Bonding tests of W and DS-Cu showed that HIP was not successful because tungsten oxide was produced at the bonding interface and residual stresses were not relaxed. Therefore, it was concluded that some insert materials will be needed to bond W and DS-Cu. (author)

  14. Investigation of Chemical Bond Properties and Mssbauer Spectroscopy in YBa2Cu3O7

    Institute of Scientific and Technical Information of China (English)

    高发明; 李东春; 张思远

    2003-01-01

    Chemical bond properties of YBa2Cu3O7 were studied by using the average band-gap model. The calculated results show that the covalency of Cu(1)-O bond is 0.406, and one of Cu(2)-O is 0.276. Mssbauer isomer shifts of 57Fe in Y-123 were calculated by the chemical surrounding factor hv defined by covalency and electronic polarizability. The charge-state and site of Fe were determined. The relation between the coupling constant of electron-phonon interaction and covalency is employed to explain that the Cu(2)-O plane is more important than the Cu(1)-O chain on the superconductivity in the Y-123 compounds.

  15. Methods for characterization of wafer-level encapsulation applied on silicon to LTCC anodic bonding

    International Nuclear Information System (INIS)

    Khan, M F; Ghavanini, F A; Enoksson, P; Haasl, S; Löfgren, L; Persson, K; Rusu, C; Schjølberg-Henriksen, K

    2010-01-01

    This paper presents initial results on generic characterization methods for wafer-level encapsulation. The methods, developed specifically to evaluate anodic bonding of low-temperature cofired ceramics (LTCC) to Si, are generally applicable to wafer-level encapsulation. Different microelectromechanical system (MEMS) structures positioned over the whole wafer provide local information about the bond quality. The structures include (i) resonating cantilevers as pressure sensors for bond hermeticity, (ii) resonating bridges as stress sensors for measuring the stress induced by the bonding and (iii) frames/mesas for pull tests. These MEMS structures have been designed, fabricated and characterized indicating that local information can easily be obtained. Buried electrodes to enable localized bonding have been implemented and their effectiveness is indicated from first results of the novel Si to LTCC anodic bonding.

  16. Characterization of intermetallic compounds in Cu-Al ball bonds: thermo-mechanical properties, interface delamination and corrosion

    NARCIS (Netherlands)

    Gubbels, G.H.M.; Kouters, M.H.M.; Dos Santos Ferreira, O.

    2012-01-01

    In high power automotive electronics copper wire bonding is regarded as the most promising alternative for gold wire bonding in 1st level interconnects. In the Cu-Al ball bond interface the growth of intermetallic compounds can deteriorate the electrical and mechanical properties of the

  17. Development of bonding techniques between W and Cu-alloys for plasma facing components by HIP method (3). Bonding tests with Au-foil insert

    International Nuclear Information System (INIS)

    Saito, Shigeru

    2002-07-01

    In recent years, it has been considered that W (tungsten) is one of candidate materials for armor tiles of plasma a facing components (PFC), like first wall or divertor, of fusion reactor. On the other hand, Cu-alloys, like OFHC-Cu or DS-Cu, are proposed as heat sink materials behind the plasma facing materials because of its high thermal conductivity. It is necessary to develop a reliable bonding techniques in order to fabricate PFC. JAERI has developed the hot isostatic press (HIP) bonding process to bond W with Cu-alloys. In this experiments, bonding tests with Au-foil insert were performed. We could get the best HIP bonding conditions for W and Cu-alloys with Au-foil as 1123K x 2hours x 147MPa. It was shown that the HIP temperature was 150K lower than that of without Au-foil. Furthermore, the tensile strength was similar to that of with without Au-foil. (author)

  18. Transient Liquid Phase Behavior of Sn-Coated Cu Particles and Chip Bonding using Paste Containing the Particles

    Directory of Open Access Journals (Sweden)

    Hwang Jun Ho

    2017-06-01

    Full Text Available Sn-coated Cu particles were prepared as a filler material for transient liquid phase (TLP bonding. The thickness of Sn coating was controlled by controlling the number of plating cycles. The Sn-coated Cu particles best suited for TLP bonding were fabricated by Sn plating thrice, and the particles showed a pronounced endothermic peak at 232°C. The heating of the particles for just 10 s at 250°C destroyed the initial core-shell structure and encouraged the formation of Cu-Sn intermetallic compounds. Further, die bonding was also successfully performed at 250°C under a slight bonding pressure of around 0.1 MPa using a paste containing the particles. The bonding time of 30 s facilitated the bonding of Sn-coated Cu particles to the Au surface and also increased the probability of network formation between particles.

  19. TPD IR studies of CO desorption from zeolites CuY and CuX

    Science.gov (United States)

    Datka, Jerzy; Kozyra, Paweł

    2005-06-01

    The desorption of CO from zeolites CuY and CuX was followed by TPD-IR method. This is a combination of temperature programmed desorption and IR spectroscopy. In this method, the status of activated zeolite (before adsorption), the process of adsorption, and the status of adsorbed molecules can be followed by IR spectroscopy, and the process of desorption (with linear temperature increase) can be followed both by IR spectroscopy and by mass spectrometry. IR spectra have shown two kinds of Cu + sites in both CuY and CuX. Low frequency (l.f.) band (2140 cm -1 in CuY and 2130 cm -1 in CuX) of adsorbed CO represents Cu + sites for which π back donation is stronger and σ donation is weaker whereas high frequency h.f. band (2160 cm -1 in CuY and 2155 cm -1 in CuX) represent Cu + sites for which π back donation is weaker and σ donation is stronger. The TPD-IR experiments evidenced that the Cu + sites represented by l.f. band bond CO more weakly than those represented by h.f. one, indicating that σ donation has more important impact to the strength of Cu +-CO bonding. On the contrary, π back donation has bigger contribution to the activation of adsorbed molecules.

  20. Atomic resolution chemical bond analysis of oxygen in La2CuO4

    Science.gov (United States)

    Haruta, M.; Nagai, T.; Lugg, N. R.; Neish, M. J.; Nagao, M.; Kurashima, K.; Allen, L. J.; Mizoguchi, T.; Kimoto, K.

    2013-08-01

    The distorted CuO6 octahedron in La2CuO4 was studied using aberration-corrected scanning transmission electron microscopy at atomic resolution. The near-edge structure in the oxygen K-edge electron energy-loss spectrum was recorded as a function of the position of the electron probe. After background subtraction, the measured spectrum image was processed using a recently developed inversion process to remove the mixing of signals on the atomic columns due to elastic and thermal scattering. The spectra were then compared with first-principles band structure calculations based on the local-density approximation plus on-site Coulomb repulsion (LDA + U) approach. In this article, we describe in detail not only anisotropic chemical bonding of the oxygen 2p state with the Cu 3d state but also with the Cu 4p and La 5d/4f states. Furthermore, it was found that buckling of the CuO2 plane was also detectable at the atomic resolution oxygen K-edge. Lastly, it was found that the effects of core-hole in the O K-edge were strongly dependent on the nature of the local chemical bonding, in particular, whether it is ionic or covalent.

  1. Local Environment Sensitivity of the Cu K-Edge XANES Features in Cu-SSZ-13: Analysis from First-Principles.

    Science.gov (United States)

    Zhang, Renqin; McEwen, Jean-Sabin

    2018-05-22

    Cu K-edge X-ray absorption near-edge spectra (XANES) have been widely used to study the properties of Cu-SSZ-13. In this Letter, the sensitivity of the XANES features to the local environment for a Cu + cation with a linear configuration and a Cu 2+ cation with a square-linear configuration in Cu-SSZ-13 is reported. When a Cu + cation is bonded to H 2 O or NH 3 in a linear configuration, the XANES has a strong peak at around 8983 eV. The intensity of this peak decreases as the linear configuration is broken. As for the Cu 2+ cations in a square-planar configuration with a coordination number of 4, two peaks at around 8986 and 8993 eV are found. An intensity decrease for both peaks at around 8986 and 8993 eV is found in an NH 3 _4_Z 2 Cu model as the N-Cu-N angle changes from 180 to 100°. We correlate these features to the variation of the 4p state by PDOS analysis. In addition, the feature peaks for both the Cu + cation and Cu 2+ cation do not show a dependence on the Cu-N bond length. We further show that the feature peaks also change when the coordination number of the Cu cation is varied, while these feature peaks are independent of the zeolite topology. These findings help elucidate the experimental XANES features at an atomic and an electronic level.

  2. Charge transfer and bond lengths in YBa2Cu3-xMxO6+y

    International Nuclear Information System (INIS)

    Jorgensen, J.D.; Rhyne, J.J.; Neumann, D.A.; Miceli, P.F.; Tarascon, J.M.; Greene, L.H.; Barboux, P.

    1989-01-01

    We discuss the effects of doping on the Cu chain sites in YBa 2 Cu 3-x M x O 6+y . The relationship between bond lengths obtained from neutron scattering and charge transfer is evaluated in terms of bond valence. In particular, it is concluded that removing an oxygen from the chains transfers one electron to the planes. 24 refs., 3 figs

  3. Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity

    Energy Technology Data Exchange (ETDEWEB)

    Hayashi, S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Sandhu, R [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Wojtowicz, M [Northrop Grumman Space Technology, Redondo Beach, CA 90278 (United States); Sun, Y [Department of Chemical Engineering, University of California, Los Angeles, CA 90095 (United States); Hicks, R [Department of Chemical Engineering, University of California, Los Angeles, CA 90095 (United States); Goorsky, M S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States)

    2005-05-21

    Specular and diffuse x-ray reflectivity measurements were employed for wafer bonding studies of surface and interfacial reactions in {approx}800 A thick SiN films deposited on III-V substrates. CuK{sub {alpha}}{sub 1} radiation was employed for these measurements. The as-deposited films show very low surface roughness and uniform, high density SiN. Reflectivity measurements show that an oxygen plasma treatment converts the nitride surface to a somewhat porous SiO{sub x} layer (67 A thick, at 80% of SiO{sub 2} density), with confirmation of the oxide formation from x-ray photoelectron spectroscopy. Reactions at the bonded interface of two oxygen plasma treated SiN layers were examined using a bonded structure from which one of the III-V wafers is removed. Reflectivity measurements of bonded structures annealed at 150 deg. C and 300 deg. C show an increase in the SiO{sub x} layer density and thickness and even a density gradient across this interface. The increase in density is correlated with an increase in bond strength, where after the 300 deg. C anneal, a high interfacial bond strength, exceeding the bulk strength, was achieved.

  4. Bonding in d9 complexes derived from EPR: Application to CuCl2-4, CuBr2-4, and CdCl2:Cu2+

    Science.gov (United States)

    Aramburu, J. A.; Moreno, M.

    1985-12-01

    In this work are reported the theoretical expressions for the [g], hyperfine, and superhyperfine (shf) tensors of a d9 square-planar complex within a molecular orbital (MO) scheme. These expressions include contributions arising from crystal field and charge transfer excitations calculated up to third and second order perturbations, respectively. This makes the present framework more general than those previously used. Through those expressions we have derived from the experimental EPR and optical data the MO coefficients corresponding to the valence b1g(x2-y2), b2g(xy), and eg(xz,yz) levels and also the core polarization contribution K to the hyperfine tensor for the systems CuCl2-4, CuBr2-4, and CdCl2:Cu2+. The 3d charge obtained for CuCl2-4 is equal to 0.61, 0.83, and 0.85 for the antibonding 3b1g, 2b2g, and 2eg levels, respectively. These figures are much closer to the Xα results by Bencini and Gatteschi [J. Am. Chem. Soc. 105, 5535 (1983)] than to those by Desjardins et al. [J. Am. Chem. Soc. 105, 4590 (1983)]. The σ and π covalency for CuBr2-4 are both higher than for CuCl2-4 in accord to the lower electronegativity for bromine. However, only for the antibonding 3b1g level of CuBr2-4 have we obtained an electronic charge lying mainly on ligands. The covalency of CdCl2:Cu2+ is smaller than that found for CuCl2-4, a fact associated to a higher metal-ligand distance for the former. Evidence of this statement are also given from the analysis of crystal-field spectra and isotropic shf constant. The values of K derived for CuCl2-4 (128.1×10-4 cm-1), CuBr2-4 (103.6×10-4 cm-1), and CdCl2:Cu2+ (123.9×10-4 cm-1) point out the dependence of K on the equatorial covalency but also on the existence of axial ligands. The [g] tensor of CuBr2-4 is dominated by the charge transfer contribution while the crystal field one is negative. Finally an analysis of the importance of each one of the involved contributions to the spin-Hamiltonian parameters is reported for the

  5. Influence of Cu Content on the Microstructure and Mechanical Properties of Cr-Cu-N Coatings

    Directory of Open Access Journals (Sweden)

    Ji Cheng Ding

    2018-01-01

    Full Text Available The Cr-Cu-N coatings with various Cu contents (0–25.18 (±0.17 at.% were deposited on Si wafer and stainless steel (SUS 304 substrates in reactive Ar+N2 gas mixture by a hybrid coating system combining pulsed DC and RF magnetron sputtering techniques. The influence of Cu content on the coating composition, microstructure, and mechanical properties was investigated. The microstructure of the coatings was significantly altered by the introduction of Cu. The deposited coatings exhibit solid solution structure with different compositions in all of the samples. Addition of Cu is intensively favored for preferred orientation growth along (200 direction by restricting in (111 direction. With increasing Cu content, the surface and cross-sectional morphology of coatings were changed from triangle cone-shaped, columnar feature to broccoli-like and compact glassy microstructure, respectively. The mechanical properties including the residual stress, nanohardness, and toughness of the coatings were explored on the basis of Cu content. The highest hardness was obtained at the Cu content of 1.49 (±0.10 at.%.

  6. Chemical bond properties and Mossbauer spectroscopy in (La1-xMx)2CuO4 (M=Ba, Sr)

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    By using the average band-gap model, the chemical bond properties of (La1-x Mx)2CuO4(M=Ba, Sr) were calculated . The calculated covalencies for Cu(O and La(O bond in the compounds are 0.3 and 0.03 respectively. M?ssbauer isomer shifts of 57Fe doped in La2CuO4 and 119Sn doped in La2CuO4 were calculated by using the chemical surrounding factor defined by covalency and electronic polarizability. Four valence state tin and three valence iron sites were identified in 57Fe and 119Sn doped La2CuO4.

  7. Characterization of HIP bonded DS-Cu/SS316L joints for fusion experimental reactors

    Energy Technology Data Exchange (ETDEWEB)

    Kanari, Moriyasu; Hatano, Toshihisa; Sato, Satoshi; Furuya, Kazuyuki; Kuroda, Toshimasa; Enoeda, Mikio; Abe, Tetsuya; Takatsu, Hideyuki [Japan Atomic Energy Research Inst., Naka, Ibaraki (Japan). Naka Fusion Research Establishment

    1998-02-01

    A shielding blanket design in a fusion reactor such as ITER has been proposed to be a modular structure integrated with the first wall. In view of the fabrication, HIP(Hot Isostatic Pressing) method has been proposed for the joining of dispersion strengthened copper (DS-Cu) and type 316L stainless steel (SS316L) at the first wall. Characterization of DS-Cu in HIP joints bonded at three different temperatures has been performed placing emphasis on metallurgical quality at the interfacial region of some hundred {mu}m by means of conventional observation and testing techniques. SEM(Scanning Electron Microscope) observation of these joints before and after intergranular corrosion to DS-Cu have shown that in two joints HIPed at 1253K and 1303K some voids of 1-4{mu}m exist in the vicinity to the interface, while in the other one HIPed at 1323K there is no void and the joint reveals good bondability. And in all the joints grain boundary has been developed parallel to the interface. SEM observation of DS-Cu grains have shown that in a joint at 1323K the grains have slightly coarsened to the size larger than as-received DS-Cu by a factor of 2, despite the hardness of that remains as as-received DS-Cu. While in the other two joints grain remains as large as as-received DS-Cu. EPMA(Electron Prove Microscopic Analysis) of aluminium in DS-Cu has shown that in all the joints accumulation of alumina has occurred in the vicinity to the interface and the length of the accumulated region increases as the increase of the HIP temperature and reaches up to 50{mu}m from the interface at 1323K. Vickers hardness test have shown that in a joint bonded at 1323K the hardness decreases to the level of an oxygen free copper in the vicinity to the interface, implying that the distribution of alumina has changed. From these experiments, it can be concluded that the joint at 1323K has exhibited the highest performance in terms of bondability. (J.P.N.)

  8. Experimental study on tensile bifurcation of nanoscale Cu film bonded to polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Men, Yutao; Wang, Shibin; Jia, Haikun; Wu, Zhiliang; Li, Linan; Zhang, Chunqiu

    2013-01-01

    Cu films are widely used in flexible electronic products. Tensile mechanical properties of the film determine product performance. In this paper, tensile experiments of sputtered Cu films on a polyethylene terephthalate (PET) substrate were carried out under an optical microscope. In the experiments, three changes took place under tension: uniform deformation, microcrack initiation and propagation, and microcrack saturation. The elastic modulus of the Cu film is 120 GPa and is independent of film thickness since the film is formed to be continuous in the nanoscale range. Film thickness is an important parameter to decide the tensile properties. The critical fracture strain, the interfacial bonding strength, and the crack spacing after saturation are related to film thickness. The critical strain and the interfacial bonding strength of the nanoscale Cu film tend to ascend then to descend as film thickness increases. The microcrack spacing is in direct proportion to film thickness after the microcrack saturates. The optimum thickness of the sputtered Cu films on the PET substrate is about 500 nm. - Highlights: • The elastic modulus of the Cu films is 120 GPa and does not change with thickness. • The optimal thickness of the Cu films is about 500 nm. • The critical strain tends to ascend then to descend as film thickness increases. • The interfacial strength changes in accordance with the critical strain. • Microcrack spacing is proportional to film thickness after the microcrack saturates

  9. Conceptual design study of Cu bonded steam generator

    International Nuclear Information System (INIS)

    Chikazawa, Yoshitaka; Konomura, Mamoru

    2004-05-01

    In phase II of feasibility study of commercialized fast reactor cycle systems of JNC, we make a concept of a sodium cooled reactor without secondary sodium circuits. And a sodium cooled reactor with Cu bonded steam generators is one of promising concept. As the result of FY 2001 study, the construction cost of reactor cooling system with rectangular tube Cu bonded steam generators is 0.71 to 1.23 times as much as that of an ordinary sodium cooled reactor with secondary sodium circuits. In the FY 2003 study, plastic and creep analysis to evaluate life distortion are carried out and inelastic strains and creep fatigue damage are checked for full code compliance. The NNC's crack growth experiments show that there are few possibility to penetrate a crack from the steam tube side to the sodium tube side at the operating temperature. But penetration is observed in a four point bend test at the room temperature, because the notch opens widely in the bend test. In the FY 2004 study, a gas pressurized crack growth experiment is planed to confirm that there is no crack penetration in the condition of operating steam generators. (author)

  10. Optimization of the diffusion bonding parameters for SS316L/CuCrZr with and without Nickel interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Singh, K.P., E-mail: kpsingh@ipr.res.in; Patel, Alpesh; Bhope, Kedar; Khirwadkar, S.S.; Mehta, Mayur

    2016-11-15

    Highlights: • Optimization of diffusion bonding parameters for dissimilar materials SS316L with CuCrZr is proposed with and without Nickel interlayer. • Ultrasonic testing on diffusion bonded samples provides the overall information/signatures about well-bonded and de-bonded samples. • Microstructural examination confirms the diffusion of Nickel into parent materials. • Mechanical characterization such as hardness measurement and shear measurement supports the results. - Abstract: Divertor & Firstwall module of ITER like tokamak has several joints of dissimilar materials such as Tungsten (W) to Copper (Cu), Cu to CuCrZr (heat sink material) and CuCrZr to Stainless Steel (SS) materials. These Plasma Facing Components (PFC) are made of multi-layered joints, which are to be exposed to the harsh environment of Plasma with the expected heat flux of 5–10 MW/m{sup 2}. The joining of SS316L material to CuCrZr material is proposed in this paper. As SS316L/CuCrZr being dissimilar materials, direct joining of these materials is a problem, which needs a suitable fabrication process. The joining of SS316L with heat sink material (CuCrZr) requires the good thermal transfer and sound in structural joint. Diffusion bonding technique has been adopted as a process for joining of these two dissimilar materials. The primary objective of the joining study is to obtain the best diffusion bonding parameters for ITER like tokamak application. Thermo-mechanical simulator machine (Gleeble 3800) is used to perform diffusion bonding experiments at different temperatures 650 °C, 850 °C, 900 °C, 950 °C & 1000 °C, different uniaxial pressure varying from 5 MPa to 15 MPa and with the holding time of 15 min & 30 min, using pure nickel interlayer. The diffusion bonded samples have undergone Non-destructive testing (NDT) particularly the ultrasonic examination using immersion probe technique, microstructural examination by the High Resolution (HR) electron microscopy (SEM), Energy

  11. Optimization of the diffusion bonding parameters for SS316L/CuCrZr with and without Nickel interlayer

    International Nuclear Information System (INIS)

    Singh, K.P.; Patel, Alpesh; Bhope, Kedar; Khirwadkar, S.S.; Mehta, Mayur

    2016-01-01

    Highlights: • Optimization of diffusion bonding parameters for dissimilar materials SS316L with CuCrZr is proposed with and without Nickel interlayer. • Ultrasonic testing on diffusion bonded samples provides the overall information/signatures about well-bonded and de-bonded samples. • Microstructural examination confirms the diffusion of Nickel into parent materials. • Mechanical characterization such as hardness measurement and shear measurement supports the results. - Abstract: Divertor & Firstwall module of ITER like tokamak has several joints of dissimilar materials such as Tungsten (W) to Copper (Cu), Cu to CuCrZr (heat sink material) and CuCrZr to Stainless Steel (SS) materials. These Plasma Facing Components (PFC) are made of multi-layered joints, which are to be exposed to the harsh environment of Plasma with the expected heat flux of 5–10 MW/m 2 . The joining of SS316L material to CuCrZr material is proposed in this paper. As SS316L/CuCrZr being dissimilar materials, direct joining of these materials is a problem, which needs a suitable fabrication process. The joining of SS316L with heat sink material (CuCrZr) requires the good thermal transfer and sound in structural joint. Diffusion bonding technique has been adopted as a process for joining of these two dissimilar materials. The primary objective of the joining study is to obtain the best diffusion bonding parameters for ITER like tokamak application. Thermo-mechanical simulator machine (Gleeble 3800) is used to perform diffusion bonding experiments at different temperatures 650 °C, 850 °C, 900 °C, 950 °C & 1000 °C, different uniaxial pressure varying from 5 MPa to 15 MPa and with the holding time of 15 min & 30 min, using pure nickel interlayer. The diffusion bonded samples have undergone Non-destructive testing (NDT) particularly the ultrasonic examination using immersion probe technique, microstructural examination by the High Resolution (HR) electron microscopy (SEM), Energy

  12. Study on the covalence of Cu and chemical bonding in an inorganic fullerene-like molecule, [CuCl]20[Cp*FeP5]12[Cu-(CH3CN)2+Cl-]5, by a density functional approach

    Institute of Scientific and Technical Information of China (English)

    WANG; Bingwu; XU; Guangxian; CHEN; Zhida

    2004-01-01

    The electronic structure and chemical bonding in a recently synthesized inorganic fullerene-like molecule, {[CuCl]20[Cp*FeP5]12 [Cu(CH3CN)+2Cl-]5}, has been studied by a density functional approach. Geometrical optimization of the three basic structural units of the molecule is performed with Amsterdam Density Functional Program. The results are in agreement with the experiment. Localized MO's obtained by Boys-Foster method give a clear picture of the chemical bonding in this molecule. The reason why CuCl can react with Cp*FeP5 in solvent CH3CN to form the fullerene-like molecule is explained in terms of the soft-hard Lewis acid base theory and a new concept of covalence.

  13. Testing of improved CFC/Cu bondings for the W7-X divertor targets

    International Nuclear Information System (INIS)

    Greuner, H.; Buswirth, B.; Boscary, J.; Tivey, R.; Plankensteiner, A.; Schedler, B.

    2007-01-01

    Full text of publication follows: Extensive high heat flux (HHF) testing of pre-series divertor targets was performed to establish the industrial process for the manufacturing of 890 targets, which will be needed for the installation of the Wendelstein 7-X (W7-X) divertor. The target design consists of flat tiles of CFC NB31 as plasma facing material bonded by an Active Meta] Casting copper (AMC) interlayer onto a water-cooled CuCrZr structure. This design is required by the specific geometrical requirements of the W7-X divertor. The heat removal capability of this target concept has been demonstrated for the envisaged operational power load of 10 MW/m 2 in previous test series of more than 30 full-scale elements. No large detachment or loss of CFC tiles occurred during cyclic loading tests at 10.5 and 13 MW/m 2 , but growing local de-bonded zones at the free edges of several CFC tiles were observed. Therefore a detailed analysis of the system of CFC/Cu bonding was carried out with respect to a further reduction of the stress at the CFC/Cu interface. Based on the results of the 3/D non-linear thermomechanical FEM analysis of the CFC/Cu interface a set of 17 additional pre-series elements was manufactured by PLANSEE SE. Three types of design variations have been investigated: - adopting an additional plastically compliant Cu interlayer between the cooling structure and the AMC region, - reduced size of CFC tiles, - arrangement of tiles with 90 deg. rotation of the CFC fibre plane. HHF tests were performed in the ion beam test facility GLADIS at IPP Garching with up to 3000 cycles at 10.5 MW/m 2 on this elements. The aim of these tests is to investigate the crack propagation between CFC/Cu and to define the acceptable defect size after 100 HHF cycles as an acceptance criterion for the series manufacturing. The applied criterion should allow the selection of elements for W7-X expected to achieve a suitable operational life time. Finally, the design variant with the

  14. Ab-initio atomic level stress and role of d-orbitals in CuZr, CuZn and CuY

    Science.gov (United States)

    Ojha, Madhusudan; Nicholson, Don M.; Egami, Takeshi

    2015-03-01

    Atomic level stress offers a new tool to characterize materials within the local approximation to density functional theory (DFT). Ab-initio atomic level stresses in B2 structures of CuZr, CuZn and CuY are calculated and results are explained on the basis of d-orbital contributions to Density of States (DOS). The overlap of d-orbital DOS plays an important role in the relative magnitude of atomic level stresses in these structures. The trends in atomic level stresses that we observed in these simple B2 structures are also seen in complex structures such as liquids, glasses and solid solutions. The stresses are however modified by the different coordination and relaxed separation distances in these complex structures. We used the Locally Self-Consistent Multiple Scattering (LSMS) code and Vienna Ab-initio Simulation Package (VASP) for ab-initio calculations.

  15. Preliminary assessment of metal-porcelain bonding strength of CoCrW alloy after 3 wt.% Cu addition

    International Nuclear Information System (INIS)

    Lu, Yanjin; Zhao, Chaoqian; Ren, Ling; Guo, Sai; Gan, Yiliang; Yang, Chunguang; Wu, Songquan; Lin, Junjie; Huang, Tingting; Yang, Ke; Lin, Jinxin

    2016-01-01

    In this work, a novel Cu-bearing CoCrW alloy fabricated by selective laser melting for dental application has been studied. For its successful application, the bonding strength of metal-porcelain is essential to be systematically investigated. Therefore, the aim of this study was to evaluate the metal-porcelain bonding strength of CoCrWCu alloy by three-point bending test, meanwhile the Ni-free CoCrW alloy was used as control. The oxygen content was investigated by an elemental analyzer; X-ray photoelectron spectroscopy (XPS) was used to analyze the surface chemical composition of CoCrW based alloy after preoxidation treatment; the fracture mode was investigated by X-ray energy spectrum analysis (EDS) and scanning electron microscope (SEM). Result from the oxygen content analysis showed that the content of oxygen dramatically increased after the Cu addition. And the XPS suggested that Co-oxidation, Cr_2O_3, CrO_2, WO_3, Cu_2O and CuO existed on the preoxidated surface of the CoCrWCu alloy; the three-point bending test showed that the bonding strength of the CoCrWCu alloy was 43.32 MPa, which was lower than that of the CoCrW group of 47.65 MPa. However, the average metal-porcelain bonding strength is significantly higher than the minimum value in the ISO 9693 standard. Results from the SEM images and EDS indicated that the fracture mode of CoCrWCu-porcelain was mixed between cohesive and adhesive. Based on the results obtained in this study, it can be indicated that the Cu-bearing CoCrW alloy fabricated by the selective laser melting is a promising candidate for use in dental application. - Highlights: • The bonding strength of metal-porcelain was slightly decreased with Cu addition; • Cu not only led to promote the diffusion of O and W element but also inhibited the diffusivity of Co in the outward direction; • The changed oxidation behavior resulted in lowering the bonding strength;

  16. Preliminary assessment of metal-porcelain bonding strength of CoCrW alloy after 3 wt.% Cu addition

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Yanjin; Zhao, Chaoqian [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 155Yangqiao Road West, Fuzhou (China); Ren, Ling [Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang (China); Guo, Sai; Gan, Yiliang [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 155Yangqiao Road West, Fuzhou (China); Yang, Chunguang [Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang (China); Wu, Songquan; Lin, Junjie; Huang, Tingting [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 155Yangqiao Road West, Fuzhou (China); Yang, Ke, E-mail: kyang@imr.ac.cn [Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang (China); Lin, Jinxin, E-mail: franklin@fjirsm.ac.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 155Yangqiao Road West, Fuzhou (China)

    2016-06-01

    In this work, a novel Cu-bearing CoCrW alloy fabricated by selective laser melting for dental application has been studied. For its successful application, the bonding strength of metal-porcelain is essential to be systematically investigated. Therefore, the aim of this study was to evaluate the metal-porcelain bonding strength of CoCrWCu alloy by three-point bending test, meanwhile the Ni-free CoCrW alloy was used as control. The oxygen content was investigated by an elemental analyzer; X-ray photoelectron spectroscopy (XPS) was used to analyze the surface chemical composition of CoCrW based alloy after preoxidation treatment; the fracture mode was investigated by X-ray energy spectrum analysis (EDS) and scanning electron microscope (SEM). Result from the oxygen content analysis showed that the content of oxygen dramatically increased after the Cu addition. And the XPS suggested that Co-oxidation, Cr{sub 2}O{sub 3}, CrO{sub 2}, WO{sub 3}, Cu{sub 2}O and CuO existed on the preoxidated surface of the CoCrWCu alloy; the three-point bending test showed that the bonding strength of the CoCrWCu alloy was 43.32 MPa, which was lower than that of the CoCrW group of 47.65 MPa. However, the average metal-porcelain bonding strength is significantly higher than the minimum value in the ISO 9693 standard. Results from the SEM images and EDS indicated that the fracture mode of CoCrWCu-porcelain was mixed between cohesive and adhesive. Based on the results obtained in this study, it can be indicated that the Cu-bearing CoCrW alloy fabricated by the selective laser melting is a promising candidate for use in dental application. - Highlights: • The bonding strength of metal-porcelain was slightly decreased with Cu addition; • Cu not only led to promote the diffusion of O and W element but also inhibited the diffusivity of Co in the outward direction; • The changed oxidation behavior resulted in lowering the bonding strength;.

  17. Atom probe tomography simulations and density functional theory calculations of bonding energies in Cu3Au

    KAUST Repository

    Boll, Torben; Zhu, Zhiyong; Al-Kassab, Talaat; Schwingenschlö gl, Udo

    2012-01-01

    In this article the Cu-Au binding energy in Cu3Au is determined by comparing experimental atom probe tomography (APT) results to simulations. The resulting bonding energy is supported by density functional theory calculations. The APT simulations

  18. Microstructure, impurity and metal cap effects on Cu electromigration

    Energy Technology Data Exchange (ETDEWEB)

    Hu, C.-K.; Gignac, L. G.; Ohm, J.; Breslin, C. M.; Huang, E.; Bonilla, G.; Liniger, E.; Rosenberg, R. [IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 (United States); Choi, S.; Simon, A. H. [IBM Microelectronic Division, Hopewell Junction, NY 12533 (United States)

    2014-06-19

    Electromigration (EM) lifetimes and void growth of pure Cu, Cu(Mn) alloy, and pure Cu damascene lines with a CoWP cap were measured as a function of grain structure (bamboo, near bamboo, and polycrystalline) and sample temperature. The bamboo grains in a bamboo-polycrystalline grained line play the key role in reducing Cu mass flow. The variation in Cu grain size distribution among the wafers was achieved by varying the metal line height and wafer annealing process step after electroplating Cu and before or after chemical mechanical polishing. The Cu grain size was found to have a large impact on Cu EM lifetime and activation energy, especially for the lines capped with CoWP. The EM activation energy for pure Cu with a CoWP cap from near-bamboo, bamboo-polycrystalline, mostly polycrystalline to polycrystalline only line grain structures was reduced from 2.2 ± 0.2 eV, to 1.7 ± 0.1 eV, to 1.5 ± 0.1 eV, to 0.72 ± 0.05 eV, respectively. The effect of Mn in Cu grain boundary diffusion was found to be dependent on Mn concentration in Cu. The depletion of Cu at the cathode end of the Cu(Mn) line is preceded by an incubation period. Unlike pure Cu lines with void growth at the cathode end and hillocks at the anode end of the line, the hillocks grew at a starting position roughly equal to the Blech critical length from the cathode end of the Cu(Mn) polycrystalline line. The effectiveness of Mn on Cu grain boundary migration can also be qualitatively accounted for by a simple trapping model. The free migration of Cu atoms at grain boundaries is reduced by the presence of Mn due to Cu-solute binding. A large binding energy of 0.5 ± 0.1 eV was observed.

  19. MEMS packaging with etching and thinning of lid wafer to form lids and expose device wafer bond pads

    Science.gov (United States)

    Chanchani, Rajen; Nordquist, Christopher; Olsson, Roy H; Peterson, Tracy C; Shul, Randy J; Ahlers, Catalina; Plut, Thomas A; Patrizi, Gary A

    2013-12-03

    In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.

  20. An Alternative Cu-Based Bond Layer for Electric Arc Coating Process

    Science.gov (United States)

    Fadragas, Carlos R.; Morales, E. V.; Muñoz, J. A.; Bott, I. S.; Lariot Sánchez, C. A.

    2011-12-01

    A Cu-Al alloy has been used as bond coat between a carbon steel substrate and a final coating deposit obtained by applying the twin wire electric arc spraying coating technique. The presence of a copper-based material in the composite system can change the overall temperature profile during deposition because copper exhibits a thermal conductivity several times higher than that of the normally recommended bond coat materials (such as nickel-aluminum alloys or nickel-chromium alloys). The microstructures of 420 and 304 stainless steels deposited by the electric arc spray process have been investigated, focusing attention on the deposit homogeneity, porosity, lamellar structure, and microhardness. The nature of the local temperature gradient during deposition can strongly influence the formation of the final coating deposit. This study presents a preliminary study, undertaken to investigate the changes in the temperature profile which occur when a Cu-Al alloy is used as bond coat, and the possible consequences of these changes on the microstructure and adhesion of the final coating deposit. The influence of the thickness of the bond layer on the top coating temperature has also been also evaluated.

  1. Modeling of direct wafer bonding: Effect of wafer bow and etch patterns

    Science.gov (United States)

    Turner, K. T.; Spearing, S. M.

    2002-12-01

    Direct wafer bonding is an important technology for the manufacture of silicon-on-insulator substrates and microelectromechanical systems. As devices become more complex and require the bonding of multiple patterned wafers, there is a need to understand the mechanics of the bonding process. A general bonding criterion based on the competition between the strain energy accumulated in the wafers and the surface energy that is dissipated as the bond front advances is developed. The bonding criterion is used to examine the case of bonding bowed wafers. An analytical expression for the strain energy accumulation rate, which is the quantity that controls bonding, and the final curvature of a bonded stack is developed. It is demonstrated that the thickness of the wafers plays a large role and bonding success is independent of wafer diameter. The analytical results are verified through a finite element model and a general method for implementing the bonding criterion numerically is presented. The bonding criterion developed permits the effect of etched features to be assessed. Shallow etched patterns are shown to make bonding more difficult, while it is demonstrated that deep etched features can facilitate bonding. Model results and their process design implications are discussed in detail.

  2. Relativistic contributions to the bonding in Cu2

    International Nuclear Information System (INIS)

    Martin, R.L.

    1983-01-01

    The influence of relativity on the spectroscopic parameters of Cu 2 has been investigated by evaluating the mass-velocity and one electron Darwin terms of the Breit--Pauli Hamiltonian in the first order of perturbation theory. The relativistic corrections are of the order of 10% of the SCF and GVB results and result in a deeper (approx.1.5 kcal), stiffer (approx.15 cm - 1 ) well, with the bond length contracted by about 0.1a 0

  3. Wafer bonding applications and technology

    CERN Document Server

    Gösele, Ulrich

    2004-01-01

    During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.

  4. Low-temperature wafer-level gold thermocompression bonding: modeling of flatness deviations and associated process optimization for high yield and tough bonds

    Science.gov (United States)

    Stamoulis, Konstantinos; Tsau, Christine H.; Spearing, S. Mark

    2005-01-01

    Wafer-level, thermocompression bonding is a promising technique for MEMS packaging. The quality of the bond is critically dependent on the interaction between flatness deviations, the gold film properties and the process parameters and tooling used to achieve the bonds. The effect of flatness deviations on the resulting bond is investigated in the current work. The strain energy release rate associated with the elastic deformation required to overcome wafer bow is calculated. A contact yield criterion is used to examine the pressure and temperature conditions required to flatten surface roughness asperities in order to achieve bonding over the full apparent area. The results are compared to experimental data of bond yield and toughness obtained from four-point bend delamination testing and microscopic observations of the fractured surfaces. Conclusions from the modeling and experiments indicate that wafer bow has negligible effect on determining the variability of bond quality and that the well-bonded area is increased with increasing bonding pressure. The enhanced understanding of the underlying deformation mechanisms allows for a better controlled trade-off between the bonding pressure and temperature.

  5. The structure of molten CuCl, CuI and their mixtures as investigated by using neutron diffraction

    International Nuclear Information System (INIS)

    Drewitt, James W E; Salmon, Philip S; Takeda, Shin'ichi; Kawakita, Yukinobu

    2009-01-01

    The structure of molten CuCl, CuI and their mixtures (CuCl) x (CuI) 1-x with x = 0.294, 0.576, 0.801 was studied by using neutron diffraction. The results are discussed by reference to the information that is available on the structure of CuCl and CuI from experiment, theory and computer simulation. The comparison points to a need for more realistic models for the CuCl-CuI system which should take into account the presence of chemical bonds that have been found in CuI by the application of ab initio molecular dynamics methods.

  6. Application Of The SPV-based Surface Lifetime Technique To In-Line Monitoring Of Surface Cu Contamination

    Science.gov (United States)

    D'Amico, John; Savtchouk, Alexandre; Wilson, Matthew; Kim, Chul Hong; Yoo, Hyung Won; Lee, Chang Hwan; Kim, Tae Kyoung; Son, Sang Hoon

    2009-09-01

    Implementation of Cu interconnects into Silicon Integrated Circuits (IC's) has been instrumental in the continuing improvement of IC device performance. Copper as a well known Gate Oxide Integrity (GOI) killer [1, 2] requires extensive protocols to minimize the possibility of cross contamination. Despite such protocols the risk for cross contamination exists, and consequently there is the need for in-line Cu cross-contamination detection metrology. Preferably the metrology will be non-destructive, fast, and capable of mapping on product wafers. Up to now the most common approaches for monitoring Cu contamination in IC fabrication lines either measure Cu in the bulk Si, which is not applicable to Cu cross-contamination monitoring because Back-End-of-the-Line thermal budgets restrict the ability to diffuse the surface Cu into the bulk Si; or the techniques are not optimal for in-line monitoring due to their destructive, time-consuming, or costly nature. In this work we demonstrate for the first time the application of the ac-Surface Photo Voltage (ac-SPV) surface lifetime approach [3] to in-line, full wafer coverage mapping of low level (metrology system. Furthermore, because the metrology is non-contact (utilizing edge-grip handling) and non-destructive, it is directly applicable to measurement of production wafers. In-line fab data acquired using this metrology is presented and compared to data from Inductively Coupled Plasma Mass Spectroscopy (ICP-MS).

  7. Mechanical, electronic and thermal properties of Cu{sub 5}Zr and Cu{sub 5}Hf by first-principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Yi, Guohui [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Zhang, Xinyu, E-mail: xyzhang@ysu.edu.cn [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Qin, Jiaqian, E-mail: jiaqianqin@gmail.com [Metallurgy and Materials Science Research Institute, Chulalongkorn University, Bangkok 10330 (Thailand); Ning, Jinliang; Zhang, Suhong; Ma, Mingzhen; Liu, Riping [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China)

    2015-08-15

    Highlights: • The mechanical and fundamental thermal data of Cu{sub 5}Zr and Cu{sub 5}Hf are determined. • The technologically important elastic anisotropy is obtained and discussed according to its industrial applications. • The brittle/ductile and bonding nature of Cu{sub 5}Zr and Cu{sub 5}Hf are analyzed in details. - Abstract: The structural, elastic, electronic and thermodynamic properties of Cu{sub 5}Zr and Cu{sub 5}Hf compounds are investigated by first-principles calculations combined with the quasi-harmonic Debye model. The calculated lattice parameters of cubic AuBe{sub 5}-type Cu{sub 5}Zr and Cu{sub 5}Hf agree well with available experimental and other theoretical results and the formation enthalpy calculations show that AuBe{sub 5}-type Cu{sub 5}Hf is more energetically stable than the competing hexagonal CaCu{sub 5}-type phase. The mechanical properties such as mechanical stabilities, anisotropy character, ductility (estimated from the value of B/G, Poisson’s ratio υ and Cauchy pressures C{sub 12}–C{sub 44}) and thermodynamic properties such as volume change under temperature and pressure (V/V{sub 0}), heat capacity (C{sub v}), Debye temperature (Θ), thermal expansion coefficient (α) of AuBe{sub 5}-type Cu{sub 5}Zr and Cu{sub 5}Hf are calculated together. Cu{sub 5}Hf has better performances than Cu{sub 5}Zr with higher hardness and better resistance to fracture which are rationalized from the calculated electronic structure (including density of states, charge density distributions, Mulliken’s population analysis) and we find that all ionic, covalent and metallic components exist in bonding of Cu{sub 5}Zr and Cu{sub 5}Hf but the covalent bonding in Cu{sub 5}Hf is stronger.

  8. INVESTIGATING THE fFORMATION OF INTERMETALLIC COMPOUNDS AND THE VARIATION OF BOND STRENGTH BETWEEN Al-Cu LAYERS AFTER ANNEALING IN PRESENCE OF NICKEL BETWEEN LAYERS

    Directory of Open Access Journals (Sweden)

    A. Shabani

    2016-06-01

    Full Text Available In the present study, the effect of post-rolling annealing heat treatment on the formation of intermetallic compounds between Al-Cu strips, in the presence of nickel coating on the Cu strips, was investigated. In addition, the effect of post-rolling annealing and intermetallic compounds on the bond strength of Al-Cu strips was evaluated. In order to prepare samples, Cu strips were coated with nickel by electroplating process. After surface preparing, Cu strips were placed between two Al strips and roll bonded. This method is used for producing Al-Ni-Cu composites. Then the samples were annealed at 773K for 2 h. The formation of intermetallic compounds was studied using energy dispersive spectroscopy (EDS and X-ray diffraction (XRD. Also, in order to investigate bond strength of Al-Cu after post-rolling annealing heat treatment, samples were produced using nickel powder and nickel coating. Then bond strength of strips was investigated using peeling test. The results revealed that by post-rolling annealing of layers, the bond strength between Al-Cu strips decreases dramatically.

  9. Solid Liquid Interdiffusion Bonding of (Pb, Sn)Te Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer

    Science.gov (United States)

    Chuang, T. H.; Lin, H. J.; Chuang, C. H.; Yeh, W. T.; Hwang, J. D.; Chu, H. S.

    2014-12-01

    A (Pb, Sn)Te thermoelectric element plated with a Ni barrier layer and a Ag reaction layer has been joined with a Cu electrode coated with Ag and Sn thin films using a solid-liquid interdiffusion bonding method. This method allows the interfacial reaction between Ag and Sn such that Ag3Sn intermetallic compounds form at low temperature and are stable at high temperature. In this study, the bonding strength was about 6.6 MPa, and the specimens fractured along the interface between the (Pb, Sn)Te thermoelectric element and the Ni barrier layer. Pre-electroplating a film of Sn with a thickness of about 1 μm on the thermoelectric element and pre-heating at 250°C for 3 min ensures the adhesion between the thermoelectric material and the Ni barrier layer. The bonding strength is thus increased to a maximal value of 12.2 MPa, and most of the fractures occur inside the thermoelectric material. During the bonding process, not only the Ag3Sn intermetallics but also Cu6Sn5 forms at the Ag3Sn/Cu interface, which transforms into Cu3Sn with increases in the bonding temperature or bonding time.

  10. New insight on the local structure of Cu2+ ion in the solution of CuBr2 by EXAFS studies

    International Nuclear Information System (INIS)

    Yu Meijuan; Chu Wangsheng; Chen Xing; Wu Ziyu

    2009-01-01

    CuBr 2 solutions at different concentrations were studied by extended X-ray absorption fine structure (EXAFS) at the Cu K edge. In the saturated solution Cu 2+ ions have chemical bonds with 3.0 oxygen atoms and 0.9 Br ion at about 1.96 A and 2.42 A, respectively. It indicates that the CuBr 4 -2 configuration exists with a ratio of 25% under this condition. In the dilute solutions no evidence of Br ions contributions in the first shell around Cu 2+ ions occurs. The almost identical X-ray absorption near edge structure (XANES) and EXAFS characters address similar local environments around Cu 2+ in agreement with results of the EXAFS fit taking into account only the contributions of Cu-O bonds.

  11. Low-lying isomeric levels in Cu75

    Science.gov (United States)

    Daugas, J. M.; Faul, T.; Grawe, H.; Pfützner, M.; Grzywacz, R.; Lewitowicz, M.; Achouri, N. L.; Angélique, J. C.; Baiborodin, D.; Bentida, R.; Béraud, R.; Borcea, C.; Bingham, C. R.; Catford, W. N.; Emsallem, A.; de France, G.; Grzywacz, K. L.; Lemmon, R. C.; Lopez Jimenez, M. J.; de Oliveira Santos, F.; Regan, P. H.; Rykaczewski, K.; Sauvestre, J. E.; Sawicka, M.; Stanoiu, M.; Sieja, K.; Nowacki, F.

    2010-03-01

    Isomeric low-lying states were identified and investigated in the Cu75 nucleus. Two states at 61.8(5)- and 128.3(7)-keV excitation energies with half-lives of 370(40)- and 170(15)-ns were assigned as Cu75m1 and Cu75m2, respectively. The measured half-lives combined with the recent spin assignment of the ground state allow one to deduce tentatively spin and parity of the two isomers and the dominant multipolarities of the isomeric transitions with respect to the systematics of the Cu isotopes. Shell-model calculations using an up-to-date effective interaction reproduce the evolution of the 1/2-, 3/2-, and 5/2- states for the neutron-rich odd-mass Cu isotopes when filling the νg9/2. The results indicate a significant change in the nuclear structure in this region, where a single-particle 5/2- state coexists with more and more collective 3/2- and 1/2- levels at low excitation energies.

  12. Nanoporous Al sandwich foils using size effect of Al layer thickness during Cu/Al/Cu laminate rolling

    Science.gov (United States)

    Yu, Hailiang; Lu, Cheng; Tieu, A. Kiet; Li, Huijun; Godbole, Ajit; Kong, Charlie

    2018-06-01

    The roll bonding technique is one of the most widely used methods to produce metal laminate sheets. Such sheets offer interesting research opportunities for both scientists and engineers. In this paper, we report on an experimental investigation of the 'thickness effect' during laminate rolling for the first time. Using a four-high multifunction rolling mill, Cu/Al/Cu laminate sheets were fabricated with a range of thicknesses (16, 40, 70 and 130 μm) of the Al layer. The thickness of the Cu sheets was a constant 300 μm. After rolling, TEM images show good bonding quality between the Cu and Al layers. However, there are many nanoscale pores in the Al layer. The fraction of nanoscale pores in the Al layer increases with a reduction in the Al layer thickness. The finite element method was used to simulate the Cu/Al/Cu rolling process. The simulation results reveal the effect of the Al layer thickness on the deformation characteristics of the Cu/Al/Cu laminate. Finally, we propose that the size effect of the Al layer thickness during Cu/Al/Cu laminate rolling may offer a method to fabricate 'nanoporous' Al sandwich laminate foils. Such foils can be used in electromagnetic shielding of electrical devices and noisy shielding of building.

  13. Particle Based Alloying by Accumulative Roll Bonding in the System Al-Cu

    Directory of Open Access Journals (Sweden)

    Mathias Göken

    2011-11-01

    Full Text Available The formation of alloys by particle reinforcement during accumulative roll bonding (ARB, and subsequent annealing, is introduced on the basis of the binary alloy system Al-Cu, where strength and electrical conductivity are examined in different microstructural states. An ultimate tensile strength (UTS of 430 MPa for Al with 1.4 vol.% Cu was reached after three ARB cycles, which almost equals UTS of the commercially available Al-Cu alloy AA2017A with a similar copper content. Regarding electrical conductivity, the UFG structure had no significant influence. Alloying of aluminum with copper leads to a linear decrease in conductivity of 0.78 µΩ∙cm/at.% following the Nordheim rule. On the copper-rich side, alloying with aluminum leads to a slight strengthening, but drastically reduces conductivity. A linear decrease of electrical conductivity of 1.19 µΩ∙cm/at.% was obtained.

  14. Effect of Cu Content on TiN-Cu Nanocomposite Film Properties: Structural and Hardness Studies

    Directory of Open Access Journals (Sweden)

    M. M. Larijani

    2013-06-01

    Full Text Available Titanium nitride-Copper (TiN-Cu nanocomposite films were deposited onto stainless steel substrate using hollow cathode discharge ion plating technique. The influence of Cu content in the range of 2-7 at.% on the microstructure, morphology and mechanical properties of deposited films were investigated. Structural properties of the films were studied by X-ray diffraction pattern. Topography of the deposited films was studied using atomic force microscopy. Film hardness was estimated by a triboscope nanoindentation system. However, X-ray photoelectron spectroscopy analysis was performed to study the surface chemical bonding states. It was found that addition of soft Cu phase above 2 at.% to TiN film drastically decreased the film hardness from 30 to 2.8 Gpa due to lubricant effect of segregated copper particles. X-ray photoelectron spectroscopy results showed that Cu and TiN phases grew separately. In our case,the formation of a solid solution or chemical bonding between Cu and Ti was rejected.

  15. Cu/Cu2O/CuO nanoparticles: Novel synthesis by exploding wire technique and extensive characterization

    Science.gov (United States)

    Sahai, Anshuman; Goswami, Navendu; Kaushik, S. D.; Tripathi, Shilpa

    2016-12-01

    In this article, we explore potential of Exploding Wire Technique (EWT) to synthesize the copper nanoparticles using the copper metal in a plate and wire geometry. Rietveld refinement of X-ray diffraction (XRD) pattern of prepared material indicates presence of mixed phases of copper (Cu) and copper oxide (Cu2O). Agglomerates of copper and copper oxide comprised of ∼20 nm average size nanoparticles observed through high resolution transmission electron microscope (HRTEM) and energy dispersive x-ray (EDX) spectroscopy. Micro-Raman (μR) and Fourier transform infrared (FTIR) spectroscopies of prepared nanoparticles reveal existence of additional minority CuO phase, not determined earlier through XRD and TEM analysis. μR investigations vividly reveal cubic Cu2O and monoclinic CuO phases based on the difference of space group symmetries. In good agreement with μRaman analysis, FTIR stretching modes corresponding to Cu2-O and Cu-O were also distinguished. Investigations of μR and FTIR vibrational modes are in accordance and affirm concurrence of CuO phases besides predominant Cu and Cu2O phase. Quantum confinement effects along with increase of band gaps for direct and indirect optical transitions of Cu/Cu2O/CuO nanoparticles are reflected through UV-vis (UV-vis) spectroscopy. Photoluminescence (PL) spectroscopy spots the electronic levels of each phase and optical transitions processes occurring therein. Iterative X-ray photoelectron spectroscopy (XPS) fitting of core level spectra of Cu (2p3/2) and O (1s), divulges presence of Cu2+ and Cu+ in the lattice with an interesting evidence of O deficiency in the lattice structure and surface adsorption. Magnetic analysis illustrates that the prepared nanomaterial demonstrates ferromagnetic behaviour at room temperature.

  16. Technical Barriers and Development of Cu Wirebonding in Nanoelectronics Device Packaging

    Directory of Open Access Journals (Sweden)

    C. L. Gan

    2012-01-01

    Full Text Available Bondpad cratering, Cu ball bond interface corrosion, IMD (intermetal dielectric cracking, and uncontrolled post-wirebond staging are the key technical barriers in Cu wire development. This paper discusses the UHAST (unbiased HAST reliability performance of Cu wire used in fine-pitch BGA package. In-depth failure analysis has been carried out to identify the failure mechanism under various assembly conditions. Obviously green mold compound, low-halogen substrate, optimized Cu bonding parameters, assembly staging time after wirebonding, and anneal baking after wirebonding are key success factors for Cu wire development in nanoelectronic packaging. Failure mechanisms of Cu ball bonds after UHAST test and CuAl IMC failure characteristics have been proposed and discussed in this paper.

  17. Magnetic behavior in heterometallic one-dimensional chains or octanuclear complex regularly aligned with metal-metal bonds as -Rh-Rh-Pt-Cu-Pt

    Science.gov (United States)

    Uemura, Kazuhiro

    2018-06-01

    Heterometallic one-dimensional chains, [{Rh2(O2CCH3)4}{Pt2Cu(piam)4(NH3)4}]n(PF6)2n (1 and 2, piam = pivalamidate) and [{Rh2(O2CCH3)4}{Pt2Cu(piam)4(NH3)4}2](CF3CO2)2(ClO4)2·2H2O (3), are paramagnetic one-dimensional chains or octanuclear complexes that are either aligned as -Rh-Rh-Pt-Cu-Pt- (1 and 2) or as Pt-Cu-Pt-Rh-Rh-Pt-Cu-Pt (3) with metal-metal bonds. Compounds 1-3 have rare structures, from the standpoint of that the paramagnetic species of Cu atoms are linked by direct metal-metal bonds. Magnetic susceptibility measurements for 1-3 performed at temperatures of 2 K-300 K indicated that the unpaired electrons localize in the Cu 3dx2-y2 orbitals, where S = 1/2 Cu(II) atoms are weakly antiferromagnetically coupled with J = -0.35 cm-1 (1), -0.47 cm-1 (2), and -0.45 cm-1 (3).

  18. Cu/Cu{sub 2}O/CuO nanoparticles: Novel synthesis by exploding wire technique and extensive characterization

    Energy Technology Data Exchange (ETDEWEB)

    Sahai, Anshuman [Department of Physics and Materials Science and Engineering, Jaypee Institute of Information Technology, A-10, Sector-62, Noida 201307 (India); Goswami, Navendu, E-mail: navendugoswami@gmail.com [Department of Physics and Materials Science and Engineering, Jaypee Institute of Information Technology, A-10, Sector-62, Noida 201307 (India); Kaushik, S.D. [UGC-DAE-Consortium for Scientific Research Mumbai Centre, R5 Shed, BARC, Mumbai 400085 (India); Tripathi, Shilpa [UGC-DAE Consortium for Scientific Research, Indore, M.P. (India)

    2016-12-30

    Highlights: The salient features of this research article are following: • Mixed phase synthesis of Cu/Cu{sub 2}O/CuO nanoparticles prepared by Exploding Wire Technique (EWT). • Predominant Cu/Cu{sub 2}O phases along with minor CuO phase revealed through XRD, TEM, Raman, FTIR, UV–Visible and PL analyses. • XPS analysis provided direct evidences of Cu{sup 2+} and Cu{sup +} along with O deficiency for prepared nanoparticles. • Room temperature weak ferromagnetic behaviour was demonstrated for Cu/Cu{sub 2}O/CuO nanoparticles. - Abstract: In this article, we explore potential of Exploding Wire Technique (EWT) to synthesize the copper nanoparticles using the copper metal in a plate and wire geometry. Rietveld refinement of X-ray diffraction (XRD) pattern of prepared material indicates presence of mixed phases of copper (Cu) and copper oxide (Cu{sub 2}O). Agglomerates of copper and copper oxide comprised of ∼20 nm average size nanoparticles observed through high resolution transmission electron microscope (HRTEM) and energy dispersive x-ray (EDX) spectroscopy. Micro-Raman (μR) and Fourier transform infrared (FTIR) spectroscopies of prepared nanoparticles reveal existence of additional minority CuO phase, not determined earlier through XRD and TEM analysis. μR investigations vividly reveal cubic Cu{sub 2}O and monoclinic CuO phases based on the difference of space group symmetries. In good agreement with μRaman analysis, FTIR stretching modes corresponding to Cu{sub 2}-O and Cu-O were also distinguished. Investigations of μR and FTIR vibrational modes are in accordance and affirm concurrence of CuO phases besides predominant Cu and Cu{sub 2}O phase. Quantum confinement effects along with increase of band gaps for direct and indirect optical transitions of Cu/Cu{sub 2}O/CuO nanoparticles are reflected through UV–vis (UV–vis) spectroscopy. Photoluminescence (PL) spectroscopy spots the electronic levels of each phase and optical transitions processes

  19. Thermal cycling tests of 1st wall mock-ups with beryllium/CuCrZr bonding

    International Nuclear Information System (INIS)

    Uda, M.; Iwadachi, T.; Uchida, M.; Yamada, H.; Nakamichi, M.; Kawamura, H.

    2004-01-01

    The innovative bonding technology between beryllium and CuCrZr with Hot Isostatic Pressing (HIP) has been proposed for the manufacturing of the ITER first wall. In the next step, thermal cycling test of first wall mock-ups manufactured with the bonding technology, were carried out under the ITER heat load condition. The test condition is 1000 cycles of On and Off under 5 MW/m 2 , and two types of the mock-up were manufactured for evaluation of the effects on HIP temperature (520 degree C and 610 degree C). The tensile properties of the bonding were also evaluated in room temperature and 200 degree C. As for the results of the thermal cycling tests, the temperature near the bonding interface were scarcely any change up to 1000 cycles, and obvious damage of the mock-up was not detected under the tests. As for the results of the tensile tests in 200 degree C, the test pieces of the HIP bonding at 610 degree C were broken in parent CuCrZr material, not broken in the bonding interface. (author)

  20. Effect of BSO addition on Cu-O bond of GdBa{sub 2}Cu{sub 3}O{sub 7-x} films with varying thickness probed by extended x-ray absorption fine structure

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, H. K.; Lee, J. K.; Yang, D. S.; Kang, B. [Chungbuk National University, Cheongju (Korea, Republic of); Kang, W. N. [Dept. of Physics, Sungkyunkwan University, Suwon (Korea, Republic of)

    2016-12-15

    We investigated the relation between the Cu-O bond length and the superconducting properties of BaSnO{sub 3} (BSO)-added GdBa{sub 2}Cu{sub 3}O{sub 7-x} (GdBCO) thin films by using extended x-ray absorption fine structure (EXAFS) spectroscopy. 4 wt.% BaSnO{sub 3} (BSO) added GdBa{sub 2}Cu{sub 3}O{sub 7-x} (GdBCO) thin films with varying thickness from 0.2 μm to 1.0 μm were fabricated by using pulsed laser deposition (PLD) method. The transition temperature (T{sub c}) and the residual resistance ratio (RRR) of the GdBCO films increased with increasing thickness up to 0.8 μm, where the crystalline BSO has the highest peak intensity, and then decreased. This uncommon behaviors of T{sub c} and RRR are likely to be created by the addition of BSO, which may change the ordering of GdBCO atomic bonds. Analysis from the Cu K-edge EXAFS spectroscopy showed an interesting thickness dependence of ordering behavior of BSO-added GdBCO films. It is noticeable that the ordering of Cu-O bond and the transition temperature are found to show opposite behaviors in the thickness dependence. Based on these results, the growth of BSO seemingly have evident effect on the alteration of the local structure of GdBCO film.

  1. New insight on the local structure of Cu{sup 2+} ion in the solution of CuBr{sub 2} by EXAFS studies

    Energy Technology Data Exchange (ETDEWEB)

    Yu Meijuan; Chu Wangsheng; Chen Xing; Wu Ziyu, E-mail: wuzy@ustc.edu.c [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049 (China)

    2009-11-15

    CuBr{sub 2} solutions at different concentrations were studied by extended X-ray absorption fine structure (EXAFS) at the Cu K edge. In the saturated solution Cu{sup 2+} ions have chemical bonds with 3.0 oxygen atoms and 0.9 Br ion at about 1.96 A and 2.42 A, respectively. It indicates that the CuBr{sub 4}{sup -2} configuration exists with a ratio of 25% under this condition. In the dilute solutions no evidence of Br ions contributions in the first shell around Cu{sup 2+} ions occurs. The almost identical X-ray absorption near edge structure (XANES) and EXAFS characters address similar local environments around Cu{sup 2+} in agreement with results of the EXAFS fit taking into account only the contributions of Cu-O bonds.

  2. The Effect of CuO Nanoparticles on Antimicrobial Effects and Shear Bond Strength of Orthodontic Adhesives.

    Science.gov (United States)

    Toodehzaeim, Mohammad Hossein; Zandi, Hengameh; Meshkani, Hamidreza; Hosseinzadeh Firouzabadi, Azadeh

    2018-03-01

    Orthodontic appliances facilitate microbial plaque accumulation and increase the chance of white spot lesions. There is a need for new plaque control methods independent of patient's cooperation. The aim of this study was to determine the effects of incorporating copper oxide (CuO) nanoparticles on antimicrobial properties and bond strength of orthodontic adhesive. CuO nanoparticles were added to the composite transbond XT at concentrations of 0.01, 0.5 and 1 wt.%. To evaluate the antimicrobial properties of composites containing nanoparticles, the disk agar diffusion test was used. For this purpose, 10 discs from each concentration of nano-composites (totally 30 discs) and 10 discs from conventional composite (as the control group) were prepared. Then the diameter of streptococcus mutans growth inhibition around each disc was determined in blood agar medium. To evaluate the shear bond strength, with each concentration of nano-composites as well as the control group (conventional composite), 10 metal brackets were bonded to the human premolars and shear bond strength was determined using a universal testing machine. Nano-composites in all three concentrations showed significant antimicrobial effect compared to the control group ( p nano-composites compared to control group ( p = 0.695). Incorporating CuO nanoparticles into adhesive in all three studied concentrations added antimicrobial effects to the adhesive with no adverse effects on shear bond strength.

  3. Atom probe tomography simulations and density functional theory calculations of bonding energies in Cu3Au

    KAUST Repository

    Boll, Torben

    2012-10-01

    In this article the Cu-Au binding energy in Cu3Au is determined by comparing experimental atom probe tomography (APT) results to simulations. The resulting bonding energy is supported by density functional theory calculations. The APT simulations are based on the Müller-Schottky equation, which is modified to include different atomic neighborhoods and their characteristic bonds. The local environment is considered up to the fifth next nearest neighbors. To compare the experimental with simulated APT data, the AtomVicinity algorithm, which provides statistical information about the positions of the neighboring atoms, is applied. The quality of this information is influenced by the field evaporation behavior of the different species, which is connected to the bonding energies. © Microscopy Society of America 2012.

  4. Failure analysis of PB-1 (EBTS Be/Cu mockup)

    International Nuclear Information System (INIS)

    Odegard, B.C. Jr.; Cadden, C.H.

    1996-11-01

    Failure analysis was done on PB-1 (series of Be tiles joined to Cu alloy) following a tile failure during a high heat flux experiment in EBTS (electron beam test system). This heat flux load simulated ambient conditions inside ITER; the Be tiles were bonded to the Cu alloy using low-temperature diffusion bonding, which is being considered for fabricating plasma facing components in ITER. Results showed differences between the EBTS failure and a failure during a room temperature tensile test. The latter occurred at the Cu-Be interface in an intermetallic phase formed by reaction of the two metals at the bonding temperature. Fracture strengths measured by these tests were over 300 MPa. The high heat flux specimens failed at the Cu-Cu diffusion bond. Fracture morphology in both cases was a mixed mode of dimple rupture and transgranular cleavage. Several explanations for this difference in failure mechanism are suggested

  5. Local atomic structure of Zr-Cu and Zr-Cu-Al amorphous alloys investigated by EXAFS method

    International Nuclear Information System (INIS)

    Antonowicz, J.; Pietnoczka, A.; Zalewski, W.; Bacewicz, R.; Stoica, M.; Georgarakis, K.; Yavari, A.R.

    2011-01-01

    Research highlights: → Coordination number, interatomic distances and mean square atomic displacement in Zr-Cu and Zr-Cu-Al glasses. → Icosahedral symmetry in local atomic structure. → Deviation from random mixing behavior resulting from Al addition. - Abstract: We report on extended X-ray absorption fine structure (EXAFS) study of rapidly quenched Zr-Cu and Zr-Cu-Al glassy alloys. The local atomic order around Zr and Cu atoms was investigated. From the EXAFS data fitting the values of coordination number, interatomic distances and mean square atomic displacement were obtained for wide range of compositions. It was found that icosahedral symmetry rather than that of corresponding crystalline analogs dominates in the local atomic structure of Zr-Cu and Zr-Cu-Al amorphous alloys. Judging from bonding preferences we conclude that addition of Al as an alloying element results in considerable deviation from random mixing behavior observed in binary Zr-Cu alloys.

  6. Nondestructive Evaluation of a Be/Cu Diffusion Bond using a Shear Horizontal Wave

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Hyun Kyu; Cheong, Yong Moo; Lee, Dong Won; Hong, Bong Keun [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2009-05-15

    The International Thermo-nuclear Experimental Reactor (ITER) blanket first wall includes Beryllium(Be) amour tiles joined to a CuCrZr heat sink with stainless steel cooling tubes. This first wall's panels are one of the critical components in the ITER which is exposed with a surface heat flux of 0.5 MW/m2. As a qualification program, ultrasonic test (UT) of a Be/CuCrZr diffusion bond has to be applied according to the proper procedure. Ultrasonic test can detect the presence of unbonded regions and is based on an amplitude change and a phase inversion in a signal reflected from a bond interface. The purpose of this study is to investigate the feasibility of EMAT (Electro-Magnetic Acoustic Transducer) technology for an in-situ inspection of a Be/Copper alloy joining interface under a high temperature and high radiation environment.

  7. Nondestructive Evaluation of a Be/Cu Diffusion Bond using a Shear Horizontal Wave

    International Nuclear Information System (INIS)

    Jung, Hyun Kyu; Cheong, Yong Moo; Lee, Dong Won; Hong, Bong Keun

    2009-01-01

    The International Thermo-nuclear Experimental Reactor (ITER) blanket first wall includes Beryllium(Be) amour tiles joined to a CuCrZr heat sink with stainless steel cooling tubes. This first wall's panels are one of the critical components in the ITER which is exposed with a surface heat flux of 0.5 MW/m2. As a qualification program, ultrasonic test (UT) of a Be/CuCrZr diffusion bond has to be applied according to the proper procedure. Ultrasonic test can detect the presence of unbonded regions and is based on an amplitude change and a phase inversion in a signal reflected from a bond interface. The purpose of this study is to investigate the feasibility of EMAT (Electro-Magnetic Acoustic Transducer) technology for an in-situ inspection of a Be/Copper alloy joining interface under a high temperature and high radiation environment

  8. Highly charged swelling mica reduces Cu bioavailability in Cu-contaminated soils

    Energy Technology Data Exchange (ETDEWEB)

    Stuckey, Jason W. [Department of Crop and Soil Sciences, Pennsylvania State University, 116 ASI Building, University Park, PA 16802 (United States); Neaman, Alexander [Facultad de Agronomia, P. Universidad Catolica de Valparaiso, Centro Regional de Estudios en Alimentos Saludables (Chile); Ravella, Ramesh; Komarneni, Sridhar [Department of Crop and Soil Sciences, Pennsylvania State University, 116 ASI Building, University Park, PA 16802 (United States); Martinez, Carmen Enid [Department of Crop and Soil Sciences, Pennsylvania State University, 116 ASI Building, University Park, PA 16802 (United States)], E-mail: cem17@psu.edu

    2009-01-15

    This is the first test of a highly charged swelling mica's (Na-2-mica) ability to reduce the plant-absorbed Cu in Cu-contaminated soils from Chile. Perennial ryegrass (Lolium perenne L.) was grown in two acid soils (Sector 2: pH 4.2, total Cu = 172 mg Cu kg{sup -1} and Sector 3: pH 4.2, total Cu = 112 mg Cu kg{sup -1}) amended with 0.5% and 1% (w/w) mica, and 1% (w/w) montmorillonite. At 10 weeks of growth, both mica treatments decreased the shoot Cu of ryegrass grown in Sector 2 producing shoot Cu concentrations above 21-22 mg Cu kg{sup -1} (the phytotoxicity threshold for that species), yet the mica treatments did not reduce shoot Cu concentrations when grown in Sector 3, which were at a typical level. The mica treatments improved shoot growth in Sector 3 by reducing free and extractable Cu to low enough levels where other nutrients could compete for plant absorption and translocation. In addition, the mica treatments improved root growth in both soils, and the 1% mica treatment reduced root Cu in both soils. This swelling mica warrants further testing of its ability to assist re-vegetation and reduce Cu bioavailability in Cu-contaminated surface soils. - In situ remediation of Cu-contaminated soils with a synthetic mica (Na-2-mica) will aid in re-vegetative efforts.

  9. Axial strain localization of CuCrZr tubes during manufacturing of ITER-like mono-block W/Cu components using HIP

    International Nuclear Information System (INIS)

    Zhao, S.X.; Peng, L.J.; Li, Q.; Wang, W.J.; Wei, R.; Qin, S.G.; Shi, Y.L.; Chang, S.P.; Xu, Y.; Liu, G.H.; Wang, T.J.; Luo, G.-N.

    2014-01-01

    Highlights: • Axial cracking and denting of CuCrZr tubes were observed. • Annealing the as-received tubes can alleviate cracking. • Denting results in the formation bonding flaws at the Cu/CuCrZr interfaces. - Abstract: Two forms of axial strain localization of CuCrZr tubes, i.e., cracking and denting, were observed during the manufacturing of ITER-like mono-block W/Cu components for EAST employing hot isostatic pressing (HIP). Microscopic investigations indicate that the occurrence of axial strain localization correlates to the heavily deformed Cu grains and elongated Cr-rich precipitates as well as highly anisotropic microstructures, which impair the circumferential ductility. Annealing the as-received tubes at 600 °C alleviates cracking due to partial recrystallization of Cu grains. However, the annealed tubes are still sensitive to wall thinning (caused by non-uniform polishing or tube bending), which results in denting. Denting may cause bonding flaws at CuCrZr/Cu interfaces and the underlying mechanisms are discussed. To some extent, denting seems do not affect the high heat flux performance of components. In this paper, we demonstrate that testing only the axial mechanical properties is not enough for manufacturers who use HIP or hot radial pressing technologies, especially for those anisotropic tubes

  10. MOFzyme: Intrinsic protease-like activity of Cu-MOF

    Science.gov (United States)

    Li, Bin; Chen, Daomei; Wang, Jiaqiang; Yan, Zhiying; Jiang, Liang; Deliang Duan; He, Jiao; Luo, Zhongrui; Zhang, Jinping; Yuan, Fagui

    2014-10-01

    The construction of efficient enzyme mimetics for the hydrolysis of peptide bonds in proteins is challenging due to the high stability of peptide bonds and the importance of proteases in biology and industry. Metal-organic frameworks (MOFs) consisting of infinite crystalline lattices with metal clusters and organic linkers may provide opportunities for protease mimic which has remained unknown. Herein, we report that Cu2(C9H3O6)4/3 MOF (which is well known as HKUST-1 and denoted as Cu-MOF here), possesses an intrinsic enzyme mimicking activity similar to that found in natural trypsin to bovine serum albumin (BSA) and casein. The Michaelis constant (Km) of Cu-MOF is about 26,000-fold smaller than that of free trypsin indicating a much higher affinity of BSA for Cu-MOF surface. Cu-MOF also exhibited significantly higher catalytic efficiency than homogeneous artificial metalloprotease Cu(II) complexes and could be reused for ten times without losing in its activity. Moreover, Cu-MOF was successfully used to simulate trypsinization in cell culture since it dissociated cells in culture even without EDTA.

  11. Solid Liquid Interdiffusion Bonding of Zn4Sb3 Thermoelectric Material with Cu Electrode

    Science.gov (United States)

    Lin, Y. C.; Lee, K. T.; Hwang, J. D.; Chu, H. S.; Hsu, C. C.; Chen, S. C.; Chuang, T. H.

    2016-10-01

    The ZnSb intermetallic compound may have thermoelectric applications because it is low in cost and environmentally friendly. In this study, a Zn4Sb3 thermoelectric element coated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode using a Ag/Sn/Ag solid-liquid interdiffusion bonding process. The results indicated that a Ni5Zn21 intermetallic phase formed easily at the Zn4Sb3/Ni interface, leading to sound adhesion. In addition, Sn film was found to react completely with the Ag layer to form a Ag3Sn intermetallic layer having a melting point of 480°C. The resulting Zn4Sb3 thermoelectric module can be applied at the optimized operation temperature (400°C) of Zn4Sb3 material as a thermoelectric element. The bonding strengths ranged from 14.9 MPa to 25.0 MPa, and shear tests revealed that the Zn4Sb3/Cu-joints fractured through the interior of the thermoelectric elements.

  12. Photoelectron and computational studies of the copper-nucleoside anionic complexes, Cu-(cytidine) and Cu-(uridine)

    Science.gov (United States)

    Li, Xiang; Ko, Yeon-Jae; Wang, Haopeng; Bowen, Kit H.; Guevara-García, Alfredo; Martínez, Ana

    2011-02-01

    The copper-nucleoside anions, Cu-(cytidine) and Cu-(uridine), have been generated in the gas phase and studied by both experimental (anion photoelectron spectroscopy) and theoretical (density functional calculations) methods. The photoelectron spectra of both systems are dominated by single, intense, and relatively narrow peaks. These peaks are centered at 2.63 and 2.71 eV for Cu-(cytidine) and Cu-(uridine), respectively. According to our calculations, Cu-(cytidine) and Cu-(uridine) species with these peak center [vertical detachment energy (VDE)] values correspond to structures in which copper atomic anions are bound to the sugar portions of their corresponding nucleosides largely through electrostatic interactions; the observed species are anion-molecule complexes. The combination of experiment and theory also reveal the presence of a slightly higher energy, anion-molecule complex isomer in the case of the Cu-(cytidine). Furthermore, our calculations found that chemically bond isomers of these species are much more stable than their anion-molecule complex counterparts, but since their calculated VDE values are larger than the photon energy used in these experiments, they were not observed.

  13. Photoelectron and computational studies of the copper-nucleoside anionic complexes, Cu(-)(cytidine) and Cu(-)(uridine).

    Science.gov (United States)

    Li, Xiang; Ko, Yeon-Jae; Wang, Haopeng; Bowen, Kit H; Guevara-García, Alfredo; Martínez, Ana

    2011-02-07

    The copper-nucleoside anions, Cu(-)(cytidine) and Cu(-)(uridine), have been generated in the gas phase and studied by both experimental (anion photoelectron spectroscopy) and theoretical (density functional calculations) methods. The photoelectron spectra of both systems are dominated by single, intense, and relatively narrow peaks. These peaks are centered at 2.63 and 2.71 eV for Cu(-)(cytidine) and Cu(-)(uridine), respectively. According to our calculations, Cu(-)(cytidine) and Cu(-)(uridine) species with these peak center [vertical detachment energy (VDE)] values correspond to structures in which copper atomic anions are bound to the sugar portions of their corresponding nucleosides largely through electrostatic interactions; the observed species are anion-molecule complexes. The combination of experiment and theory also reveal the presence of a slightly higher energy, anion-molecule complex isomer in the case of the Cu(-)(cytidine). Furthermore, our calculations found that chemically bond isomers of these species are much more stable than their anion-molecule complex counterparts, but since their calculated VDE values are larger than the photon energy used in these experiments, they were not observed.

  14. Bonding Be to Cu alloys using a proprietary Brush Wellman process and new results for bonding Be to AlBeMet

    Energy Technology Data Exchange (ETDEWEB)

    Dombrowski, D.E. [Brush Wellman Inc., Cleveland, OH (United States)

    1998-01-01

    A novel process has been investigated for bonding of beryllium to copper alloys. The process is compatible with current manufacturing capabilities and can be readily scaled up from laboratory to production scale. The effect of process variations on the bond are shown. Also shown are several new approaches for direct bonding of beryllium to an AlBeMet interlayer. Bond strengths of Be/AlBeMet 162/Cu alloy couples are presented. (author)

  15. Doping mechanism in pure CuInSe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Werner, F.; Colombara, D.; Melchiorre, M.; Spindler, C.; Siebentritt, S. [Physics and Materials Science Research Unit, University of Luxembourg, Rue du Brill 41, L-4422 Belvaux (Luxembourg); Valle, N.; El Adib, B. [Materials Research and Technology Department, Luxembourg Institute of Science and Technology, Rue du Brill 41, L-4422 Belvaux (Luxembourg)

    2016-05-07

    We investigate the dopant concentration and majority carrier mobility in epitaxial CuInSe{sub 2} thin films for different copper-to-indium ratios and selenium excess during growth. We find that all copper-poor samples are n-type, and that hopping conduction in a shallow donor state plays a significant role for carrier transport. Annealing in sodium ambient enhances gallium in-diffusion from the substrate wafer and changes the net doping of the previously n-type samples to p-type. We suggest that sodium incorporation from the glass might be responsible for the observed p-type doping in polycrystalline Cu-poor CuInSe{sub 2} solar cell absorbers.

  16. Stress reduction of Cu-doped diamond-like carbon films from ab initio calculations

    Directory of Open Access Journals (Sweden)

    Xiaowei Li

    2015-01-01

    Full Text Available Structure and properties of Cu-doped diamond-like carbon films (DLC were investigated using ab initio calculations. The effect of Cu concentrations (1.56∼7.81 at.% on atomic bond structure was mainly analyzed to clarify the residual stress reduction mechanism. Results showed that with introducing Cu into DLC films, the residual compressive stress decreased firstly and then increased for each case with the obvious deterioration of mechanical properties, which was in agreement with the experimental results. Structural analysis revealed that the weak Cu-C bond and the relaxation of both the distorted bond angles and bond lengths accounted for the significant reduction of residual compressive stress, while at the higher Cu concentration the increase of residual stress attributed to the existence of distorted Cu-C structures and the increased fraction of distorted C-C bond lengths.

  17. LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System

    Science.gov (United States)

    Tang, Y. K.; Hsu, Y. C.; Lin, E. J.; Hu, Y. J.; Liu, C. Y.

    2016-12-01

    In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.

  18. Theoretical description of copper Cu(I)/Cu(II) complexes in mixed ammine-aqua environment. DFT and ab initio quantum chemical study

    International Nuclear Information System (INIS)

    Pavelka, Matej; Burda, Jaroslav V.

    2005-01-01

    This work is devoted to investigate the interactions of the Cu(I)/Cu(II) cation with variable ammonia-water ligand field by the quantum chemical approach. For that purpose, the optimization of the [Cu(NH 3 ) m (H 2 O) n ] 2+/+ complexes (where n varies from 0 to 4 or 6 and m + n = 4 or 6) has been performed at the DFT/6-31+G(d) level of theory in conjunction with the B3PW91 hybrid functional. Based on the results of the single-point B3LYP/6-311++G(2df,2pd) calculations, the stabilization energies were determined. The two-coordinated copper(I) complexes appeared to be the most stable compounds with the remaining water or ammonia molecules in the second solvation shell. In the case of the Cu(II) systems, four-coordinated complexes were found to be the most stable. In order to examine and explain bonding characteristics, Morokuma interaction energy decomposition (for selected Cu + complexes) and Natural Population Analysis for all systems were performed. It was found that the most stable structures correlate with the highest donation effects. Therefore, more polarizable ammonia molecules exhibit higher donation than water and thus make stronger bonds to copper. This can be demonstrated by the fact that the NH 3 molecule always tries to occupy the first solvation shell in mixed ammine-aqua complexes

  19. Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers

    Science.gov (United States)

    Miki, N.; Spearing, S. M.

    2003-11-01

    Direct wafer bonding of silicon wafers is a promising technology for manufacturing three-dimensional complex microelectromechanical systems as well as silicon-on-insulator substrates. Previous work has reported that the bond quality declines with increasing surface roughness, however, this relationship has not been quantified. This article explicitly correlates the bond quality, which is quantified by the apparent bonding energy, and the surface morphology via the bearing ratio, which describes the area of surface lying above a given depth. The apparent bonding energy is considered to be proportional to the real area of contact. The effective area of contact is defined as the area sufficiently close to contribute to the attractive force between the two bonding wafers. Experiments were conducted with silicon wafers whose surfaces were roughened by a buffered oxide etch solution (BOE, HF:NH4F=1:7) and/or a potassium hydroxide solution. The surface roughness was measured by atomic force microscopy. The wafers were direct bonded to polished "monitor" wafers following a standard RCA cleaning and the resulting bonding energy was measured by the crack-opening method. The experimental results revealed a clear correlation between the bonding energy and the bearing ratio. A bearing depth of ˜1.4 nm was found to be appropriate for the characterization of direct-bonded silicon at room temperature, which is consistent with the thickness of the water layer at the interface responsible for the hydrogen bonds that link the mating wafers.

  20. Cu-O network dependence of optical charge-transfer gaps and spin-pair excitations in single-CuO2-layer compounds

    International Nuclear Information System (INIS)

    Tokura, Y.; Koshihara, S.; Arima, T.; Takagi, H.; Ishibashi, S.; Ido, T.; Uchida, S.

    1990-01-01

    Spectra of optical conductivity and magnon Raman scattering have been investigated in single crystals of a parent family of cuprate superconductors with various types of Cu-O single-layer networks. The analysis of the spectra shows the systematic dependence of the charge-transfer gaps and covalent character of Cu-O bonds on the pattern of the Cu-O network, while the spin-exchange energy is rather convergent for all the single-CuO 2 -sheet compounds

  1. Numerical Analysis of Warpage Induced by Thermo-Compression Bonding Process of Cu Pillar Bump Flip Chip Package

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Oh Young; Jung, Hoon Sun; Lee, Jung Hoon; Choa, Sung-Hoon [Seoul Nat’l Univ. of Science and Technology, Seoul (Korea, Republic of)

    2017-06-15

    In flip chip technology, the conventional solder bump has been replaced with a copper (Cu) pillar bump owing to its higher input/output (I/O) density, finer pitch, and higher reliability. However, Cu pillar bump technology faces several issues, such as interconnect shorting and higher low-k stress due to stiffer Cu pillar structure when the conventional reflow process is used. Therefore, the thermal compression bonding (TCB) process has been adopted in the flip chip attachment process in order to reduce the package warpage and stress. In this study, we investigated the package warpage induced during the TCB process using a numerical analysis. The warpage of the TCB process was compared with that of the reflow process.

  2. Wafer level packaging of MEMS

    International Nuclear Information System (INIS)

    Esashi, Masayoshi

    2008-01-01

    Wafer level packaging plays many important roles for MEMS (micro electro mechanical systems), including cost, yield and reliability. MEMS structures on silicon chips are encapsulated between bonded wafers or by surface micromachining, and electrical interconnections are made from the cavity. Bonding at the interface, such as glass–Si anodic bonding and metal-to-metal bonding, requires electrical interconnection through the lid vias in many cases. On the other hand, lateral electrical interconnections on the surface of the chip are used for bonding with intermediate melting materials, such as low melting point glass and solder. The cavity formed by surface micromachining is made using sacrificial etching, and the openings needed for the sacrificial etching are plugged using deposition sealing methods. Vacuum packaging methods and the structures for electrical feedthrough for the interconnection are discussed in this review. (topical review)

  3. Cohesive zone model for direct silicon wafer bonding

    Science.gov (United States)

    Kubair, D. V.; Spearing, S. M.

    2007-05-01

    Direct silicon wafer bonding and decohesion are simulated using a spectral scheme in conjunction with a rate-dependent cohesive model. The cohesive model is derived assuming the presence of a thin continuum liquid layer at the interface. Cohesive tractions due to the presence of a liquid meniscus always tend to reduce the separation distance between the wafers, thereby opposing debonding, while assisting the bonding process. In the absence of the rate-dependence effects the energy needed to bond a pair of wafers is equal to that needed to separate them. When rate-dependence is considered in the cohesive law, the experimentally observed asymmetry in the energetics can be explained. The derived cohesive model has the potential to form a bridge between experiments and a multiscale-modelling approach to understand the mechanics of wafer bonding.

  4. Electronic structure, chemical bonding, phase stability, and ground-state properties of YNi2-x(Co/Cu)xB2C

    International Nuclear Information System (INIS)

    Ravindran, P.; Johansson, B.; Eriksson, O.

    1998-01-01

    In order to understand the role of Ni site substitution on the electronic structure and chemical bonding in YNi 2 B 2 C, we have made systematic electronic-structure studies on YNi 2 B 2 C as a function of Co and Cu substitution using the supercell approach within the local density approximation. The equilibrium volume, bulk modulus (B 0 ) and its pressure derivative (B 0 ' ), Grueneisen constant (γ G ), Debye temperature (Θ D ), cohesive energy (E c ), and heat of formation (ΔH) are calculated for YNi 2-x (Co/Cu) x B 2 C (x=0,0.5,1.0,1.5,2). From the total energy, electron-energy band structure, site decomposed density of states, and charge-density contour we have analyzed the structural stability and chemical bonding behavior of YNi 2 B 2 C as a function of Co/Cu substitution. We find that the simple rigid band model successfully explains the electronic structure and structural stability of Co/Cu substitution for Ni. In addition to studying the chemical bonding and electronic structure we present a somewhat speculative analysis of the general trends in the behavior of critical temperature for superconductivity as a function of alloying. copyright 1998 The American Physical Society

  5. Electronic structures of the YBa2Cu3O7-x surface and its modification by sputtering and adatoms of Ti and Cu

    Science.gov (United States)

    Meyer, H. M., III; Hill, D. M.; Wagener, T. J.; Gao, Y.; Weaver, J. H.; Capone, D. W., II; Goretta, K. C.

    1988-10-01

    metal as the overlayer thickens (Cu 2p2/3 binding energy 932.5 eV for Cu metal, 933.1 eV for Cu1+, and 932.8 eV for the superconductor). Valence-band results during interface formation show the disappearance of emission near the Fermi level, consistent with the loss of Cu2+-O covalent bonds of the superconductor.

  6. Fluorine-enhanced low-temperature wafer bonding of native-oxide covered Si wafers

    Science.gov (United States)

    Tong, Q.-Y.; Gan, Q.; Fountain, G.; Enquist, P.; Scholz, R.; Gösele, U.

    2004-10-01

    The bonding energy of bonded native-oxide-covered silicon wafers treated in the HNO3/H2O/HF or the HNO3/HF solution prior to room-temperature contact is significantly higher than bonded standard RCA1 cleaned wafer pairs after low-temperature annealing. The bonding energy reaches over 2000mJ/m2 after annealing at 100 °C. The very slight etching and fluorine in the chemically grown oxide are believed to be the main contributors to the enhanced bonding energy. Transmission-electron-microscopic images have shown that the chemically formed native oxide at bonding interface is embedded with many flake-like cavities. The cavities can absorb the by-products of the interfacial reactions that result in covalent bond formation at low temperatures allowing the strong bond to be retained.

  7. Comparative TEM study of bonded silicon/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding

    International Nuclear Information System (INIS)

    Reznicek, A.; Scholz, R.; Senz, S.; Goesele, U.

    2003-01-01

    Wafers of Czochralski-grown silicon were bonded hydrophilically, hydrophobically and in ultrahigh vacuum (UHV) at room temperature. Wafers bonded hydrophilically adhere together by hydrogen bonds, those bonded hydrophobically by van der Waals forces and UHV-bonded ones by covalent bonds. Annealing the pre-bonded hydrophilic and hydrophobic wafer pairs in argon for 2 h at different temperatures increases the initially low bonding energy. UHV-bonded wafer pairs were also annealed to compare the results. Transmission electron microscopy (TEM) investigations show nano-voids at the interface. The void density depends on the initial bonding strength. During annealing the shape, coverage and density of the voids change significantly

  8. Fabrication of mock-up with Be armour tiles diffusion bonded to the CuCrZr heat sink

    International Nuclear Information System (INIS)

    Moreschi, L.F.; Pizzuto, A.; Alessandrini, I.; Agostini, M.; Visca, E.; Merola, M.

    2001-01-01

    The aim of this work is the manufacture of high heat flux mock-ups with Be armour tiles on a CuCrZr heat sink for fabricating the beryllium section of the divertor vertical target (DVT) in the ITER reactor. Diffusion bonding between the CuCrZr bar and the beryllium tiles was obtained by inserting an aluminium interlayer to accommodate surface irregularities as well as to provide a compliant layer for accommodating thermal mismatches during both manufacturing and operation and cycles

  9. Molecular distortion and charge transfer effects in ZnPc/Cu(111)

    KAUST Repository

    Amin, B.; Nazir, S.; Schwingenschlö gl, Udo

    2013-01-01

    The adsorption geometry and electronic properties of a zinc-phthalocyanine molecule on a Cu(111) substrate are studied by density functional theory. In agreement with experiment, we find remarkable distortions of the molecule, mainly as the central Zn atom tends towards the substrate to minimize the Zn-Cu distance. As a consequence, the Zn-N chemical bonding and energy levels of the molecule are significantly modified. However, charge transfer induces metallic states on the molecule and therefore is more important for the ZnPc/Cu(111) system than the structural distortions.

  10. Molecular distortion and charge transfer effects in ZnPc/Cu(111)

    KAUST Repository

    Amin, B.

    2013-04-23

    The adsorption geometry and electronic properties of a zinc-phthalocyanine molecule on a Cu(111) substrate are studied by density functional theory. In agreement with experiment, we find remarkable distortions of the molecule, mainly as the central Zn atom tends towards the substrate to minimize the Zn-Cu distance. As a consequence, the Zn-N chemical bonding and energy levels of the molecule are significantly modified. However, charge transfer induces metallic states on the molecule and therefore is more important for the ZnPc/Cu(111) system than the structural distortions.

  11. Wafer-level hermetic thermo-compression bonding using electroplated gold sealing frame planarized by fly-cutting

    Science.gov (United States)

    Farisi, Muhammad Salman Al; Hirano, Hideki; Frömel, Jörg; Tanaka, Shuji

    2017-01-01

    In this paper, a novel wafer-level hermetic packaging technology for heterogeneous device integration is presented. Hermetic sealing is achieved by low-temperature thermo-compression bonding using electroplated Au micro-sealing frame planarized by single-point diamond fly-cutting. The proposed technology has significant advantages compared to other established processes in terms of integration of micro-structured wafer, vacuum encapsulation and electrical interconnection, which can be achieved at the same time. Furthermore, the technology is also achievable for a bonding frame width as narrow as 30 μm, giving it an advantage from a geometry perspective, and bonding temperatures as low as 300 °C, making it advantageous for temperature-sensitive devices. Outgassing in vacuum sealed cavities is studied and a cavity pressure below 500 Pa is achieved by introducing annealing steps prior to bonding. The pressure of the sealed cavity is measured by zero-balance method utilizing diaphragm-structured bonding test devices. The leak rate into the packages is determined by long-term sealed cavity pressure measurement for 1500 h to be less than 2.0× {{10}-14} Pa m3s-1. In addition, the bonding shear strength is also evaluated to be higher than 100 MPa.

  12. Effect of alkaline slurry on the electric character of the pattern Cu wafer

    International Nuclear Information System (INIS)

    Hu Yi; Liu Yuling; Liu Xiaoyan; He Yangang; Wang Liran; Zhang Baoguo

    2011-01-01

    For process integration considerations, we will investigate the impact of chemical mechanical polishing (CMP) on the electrical characteristics of the pattern Cu wafer. In this paper, we investigate the impacts of the CMP process with two kinds of slurry, one of which is acid slurry of SVTC and the other is FA/O alkaline slurry purchased from Tianjin Jingling Microelectronic Material Limited. Three aspects were investigated: resistance, capacitance and leakage current. The result shows that after polishing by the slurry of FA/O, the resistance is lower than the SVTC. After polishing by the acid slurry and FA/O alkaline slurry, the difference in capacitance is not very large. The values are 0.1 nF and 0.12 nF, respectively. The leakage current of the film polished by the slurry of FA/O is 0.01 nA, which is lower than the slurry of SVTC. The results show that the slurry of FA/O produced less dishing and oxide loss than the slurry of SVTC. (semiconductor technology)

  13. Deuterium transport in Cu, CuCrZr, and Cu/Be

    Science.gov (United States)

    Anderl, R. A.; Hankins, M. R.; Longhurst, G. R.; Pawelko, R. J.

    This paper presents the results of deuterium implantation/permeation experiments and TMAP4 simulations for a CuCrZr alloy, for OFHC-Cu and for a Cu/Be bi-layered structure at temperatures from 700 to 800 K. Experiments used a mass-analyzed, 3-keV D 3+ ion beam with particle flux densities of 5 × 10 19 to 7 × 10 19 D/m 2 s. Effective diffusivities and surface molecular recombination coefficients were derived giving Arrhenius pre-exponentials and activation energies for each material: CuCrZr alloy, (2.0 × 10 -2 m 2/s, 1.2 eV) for diffusivity and (2.9 × x10 -14 m 4/s, 1.92 eV) for surface molecular recombination coefficients; OFHC Cu, (2.1 × 10 -6 m 2/s, 0.52 eV) for diffusivity and (9.1 × 10 -18 m 4/s, 0.99 eV) for surface molecular recombination coefficients. TMAP4 simulation of permeation data measured for a Cu/Be bi-layer sample was achieved using a four-layer structure (Cu/BeO interface/Be/BeO back surface) and recommended values for diffusivity and solubility in Be, BeO and Cu.

  14. Thermochemical properties of oxides in Y-Ba-Cu-O, Sr-Bi-O, Cu-Nb-O, Sr-Cu-O, Ca-Cu-O, Cu-O and Hg-Ba-Ca-Cu-O systems

    International Nuclear Information System (INIS)

    Moiseev, G.K.; Vatolin, N.A.; Il'inykh, N.I.

    2000-01-01

    Thermochemical properties (ΔH 0 298 , S 0 298 , H 0 298 -H 0 0 , C p (T), C p at T>T melt ) of complex oxides in Y-Ba-Cu-O, Sr-Bi-O, Cu-Nb-O, Sr-Cu-O, Ca-Cu-O, Cu-O and Hg-Ba-Ca-Cu-O systems obtained with application of calculation methods are presented. Nonexperimental methods of estimation, revision and correction of standard formation enthalpies of inorganic compounds are described [ru

  15. Benzotriazole removal on post-Cu CMP cleaning

    International Nuclear Information System (INIS)

    Tang Jiying; Liu Yuling; Sun Ming; Fan Shiyan; Li Yan

    2015-01-01

    This work investigates systematically the effect of FA/O II chelating agent and FA/O I surfactant in alkaline cleaning solutions on benzotriazole (BTA) removal during post-Cu CMP cleaning in GLSI under the condition of static etching. The best detergent formulation for BTA removal can be determined by optimization of the experiments of single factor and compound cleaning solution, which has been further confirmed experimentally by contact angle (CA) measurements. The resulting solution with the best formulation has been measured for the actual production line, and the results demonstrate that the obtained cleaning solution can effectively and efficiently remove BTA, CuO and abrasive SiO 2 without basically causing interfacial corrosion. This work demonstrates the possibility of developing a simple, low-cost and environmentally-friendly cleaning solution to effectively solve the issues of BTA removal on post-Cu CMP cleaning in a multi-layered copper wafer. (paper)

  16. Copper(II) perrhenate Cu(C{sub 3}H{sub 7}OH){sub 2}(ReO{sub 4}){sub 2}: Synthesis from isopropanol and CuReO{sub 4}, structure and properties

    Energy Technology Data Exchange (ETDEWEB)

    Mikhailova, D., E-mail: d.mikhailova@ifw-dresden.de [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials (IAM), Hermann-von-Helmholtz-Platz 1, D-76434 Eggenstein-Leopoldshafen (Germany); Institute for Complex Materials, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden (Germany); Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, D-01187 Dresden (Germany); Engel, J.M. [Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Str. 2, D-64287 Darmstadt (Germany); Schmidt, M. [Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, D-01187 Dresden (Germany); Tsirlin, A.A. [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn (Estonia); Ehrenberg, H. [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials (IAM), Hermann-von-Helmholtz-Platz 1, D-76434 Eggenstein-Leopoldshafen (Germany); Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Str. 2, D-64287 Darmstadt (Germany)

    2015-12-15

    The crystal structure of Cu{sup +}Re{sup 7+}O{sub 4} is capable of a quasi-reversible incorporation of C{sub 3}H{sub 7}OH molecules. A room-temperature reaction between CuReO{sub 4} and C{sub 3}H{sub 7}OH under oxidizing conditions leads to the formation of a novel metal-organic hybrid compound Cu{sup 2+}(C{sub 3}H{sub 7}OH){sub 2}(ReO{sub 4}){sub 2}. Upon heating under reducing conditions, this compound transforms back into CuReO{sub 4}, albeit with ReO{sub 2} and metallic Cu as by-products. The crystal structure of Cu(C{sub 3}H{sub 7}OH){sub 2}(ReO{sub 4}){sub 2} solved from single-crystal X-ray diffraction (Pbca, a=10.005(3) Å, b=7.833(2) Å, and c=19.180(5) Å) reveals layers of corner-sharing CuO{sub 6}-octahedra and ReO{sub 4}-tetrahedra, whereas isopropyl groups are attached to both sides of these layers, thus providing additional connections within the layers through hydrogen bonds. Cu(C{sub 3}H{sub 7}OH){sub 2}(ReO{sub 4}){sub 2} is paramagnetic down to 4 K because the spatial arrangement of the Cu{sup 2+} half-filled orbitals prevents magnetic superexchange. The paramagnetic effective moment of 2.0(1) μ{sub B} is slightly above the spin-only value and typical for Cu{sup 2+} ions. - Highlights: • Novel Cu(C{sub 3}H{sub 7}OH){sub 2}(ReO{sub 4}){sub 2} compound has a sequence of inorganic and organic layers. • Hydrogen bonds provide an additional bonding Isopropanol molecules serve as a reducing agent during decomposition. • No direct Cu-O-Re-O-Cu connections via d{sub x2-y2} orbital of Cu{sup 2+} explain paramagnetism. • Hydrogen bonds provide an additional bonding. • Isopropanol molecules serve as a reducing agent during decomposition.

  17. CO interaction with Cu(I)-MCM-22 zeolite: density function theory investigation

    International Nuclear Information System (INIS)

    Viet Thang Ho; Petr Nachtigall

    2014-01-01

    MCM-22 zeolite has been widely used in many applications for catalysis and adsorption. Especially, this material exchanged with Cu + cation (Cu(I)-MCM-22) is an active catalyst in green chemical reaction, such as decomposition of NO and N 2 O. The local geometry of Cu + in vicinity of Al (III) replacement in six different Si (IV) sites and CO interaction with the most stable Cu + in each Al site were explored using periodic density functional theory (DFT) method. Th CO stretching frequencies were computed applying the ω/r scaling method in which frequencies were determined at high quantum level (couple cluster) and CO bond length calculated at DFT level. The results showed that Cu + cation located in the channel wall position and intersection position coordinated with 3 or 2 framework oxygen atoms, respectively, before CO adsorption and Cu + cation coordinated with 2 framework oxygen atoms after CO adsorption. The interaction energies between CO and Cu + cation were in range -148 to -195 kJ/mol -1 and CO frequencies exhibit two peak at 2151 and 2159 cm -1 in good agreement with experimental data. This investigation allows to understand the Cu + location in MCM-22 and CO adsorption in Cu(I)-MCM-22 zeolite. (author)

  18. Wafer-Level Vacuum Packaging of Smart Sensors.

    Science.gov (United States)

    Hilton, Allan; Temple, Dorota S

    2016-10-31

    The reach and impact of the Internet of Things will depend on the availability of low-cost, smart sensors-"low cost" for ubiquitous presence, and "smart" for connectivity and autonomy. By using wafer-level processes not only for the smart sensor fabrication and integration, but also for packaging, we can further greatly reduce the cost of sensor components and systems as well as further decrease their size and weight. This paper reviews the state-of-the-art in the wafer-level vacuum packaging technology of smart sensors. We describe the processes needed to create the wafer-scale vacuum microchambers, focusing on approaches that involve metal seals and that are compatible with the thermal budget of complementary metal-oxide semiconductor (CMOS) integrated circuits. We review choices of seal materials and structures that are available to a device designer, and present techniques used for the fabrication of metal seals on device and window wafers. We also analyze the deposition and activation of thin film getters needed to maintain vacuum in the ultra-small chambers, and the wafer-to-wafer bonding processes that form the hermetic seal. We discuss inherent trade-offs and challenges of each seal material set and the corresponding bonding processes. Finally, we identify areas for further research that could help broaden implementations of the wafer-level vacuum packaging technology.

  19. Wafer-Level Vacuum Packaging of Smart Sensors

    Directory of Open Access Journals (Sweden)

    Allan Hilton

    2016-10-01

    Full Text Available The reach and impact of the Internet of Things will depend on the availability of low-cost, smart sensors—“low cost” for ubiquitous presence, and “smart” for connectivity and autonomy. By using wafer-level processes not only for the smart sensor fabrication and integration, but also for packaging, we can further greatly reduce the cost of sensor components and systems as well as further decrease their size and weight. This paper reviews the state-of-the-art in the wafer-level vacuum packaging technology of smart sensors. We describe the processes needed to create the wafer-scale vacuum microchambers, focusing on approaches that involve metal seals and that are compatible with the thermal budget of complementary metal-oxide semiconductor (CMOS integrated circuits. We review choices of seal materials and structures that are available to a device designer, and present techniques used for the fabrication of metal seals on device and window wafers. We also analyze the deposition and activation of thin film getters needed to maintain vacuum in the ultra-small chambers, and the wafer-to-wafer bonding processes that form the hermetic seal. We discuss inherent trade-offs and challenges of each seal material set and the corresponding bonding processes. Finally, we identify areas for further research that could help broaden implementations of the wafer-level vacuum packaging technology.

  20. Deep-level transient spectroscopy of TiO2/CuInS2 heterojunctions

    NARCIS (Netherlands)

    Nanu, M.; Boulch, F.; Schoonman, J.; Goossens, A.

    2005-01-01

    Deep-level transient spectroscopy (DLTS) has been used to measure the concentration and energy position of deep electronic states in CuInS2. Flat TiO2?CuInS2 heterojunctions as well as TiO2-CuInS2 nanocomposites have been investigated. Subband-gap electronic states in CuInS2 films are mostly due to

  1. Average and local structure of α-CuI by configurational averaging

    International Nuclear Information System (INIS)

    Mohn, Chris E; Stoelen, Svein

    2007-01-01

    Configurational Boltzmann averaging together with density functional theory are used to study in detail the average and local structure of the superionic α-CuI. We find that the coppers are spread out with peaks in the atom-density at the tetrahedral sites of the fcc sublattice of iodines. We calculate Cu-Cu, Cu-I and I-I pair radial distribution functions, the distribution of coordination numbers and the distribution of Cu-I-Cu, I-Cu-I and Cu-Cu-Cu bond-angles. The partial pair distribution functions are in good agreement with experimental neutron diffraction-reverse Monte Carlo, extended x-ray absorption fine structure and ab initio molecular dynamics results. In particular, our results confirm the presence of a prominent peak at around 2.7 A in the Cu-Cu pair distribution function as well as a broader, less intense peak at roughly 4.3 A. We find highly flexible bonds and a range of coordination numbers for both iodines and coppers. This structural flexibility is of key importance in order to understand the exceptional conductivity of coppers in α-CuI; the iodines can easily respond to changes in the local environment as the coppers diffuse, and a myriad of different diffusion-pathways is expected due to the large variation in the local motifs

  2. Annihilation of positrons with the electrons of chemical bonds of the superconducting CuO-polyhedrons in the HTSC materials

    International Nuclear Information System (INIS)

    Arutyunov, N.Yu.; Trashchakov, V.Yu.

    1989-01-01

    Angular distribution parameters of annihilation photon pairs emitted from R-Ba 2 Cu 3 O 7-x (x≤0.2; R=Y, Nd, Lu) specimens after injection and subsequent annihilation of positrons in them. It is shown that annihilation of thermalized positrons proceeds advantageously with electrons of chemical bonds of O(4)-Cu(I)-O(I) polyhedrons in R-Ba-Cu-O oxides. In an orthorhombic phase positrons are mostly delocalized in rows of ordered stoichiometric vacancies. The result obtained provides to recommend the methods of positron diagnostics for studying parameters of electron state density in superconducting structural groups of high-temperature superconductors. 2 refs.; 1 fig

  3. Compositional ratio effect on the surface characteristics of CuZn thin films

    Science.gov (United States)

    Choi, Ahrom; Park, Juyun; Kang, Yujin; Lee, Seokhee; Kang, Yong-Cheol

    2018-05-01

    CuZn thin films were fabricated by RF co-sputtering method on p-type Si(100) wafer with various RF powers applied on metallic Cu and Zn targets. This paper aimed to determine the morphological, chemical, and electrical properties of the deposited CuZn thin films by utilizing a surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), UV photoelectron spectroscopy (UPS), and a 4-point probe. The thickness of the thin films was fixed at 200 ± 8 nm and the roughness of the thin films containing Cu was smaller than pure Zn thin films. XRD studies confirmed that the preferred phase changed, and this tendency is dependent on the ratio of Cu to Zn. AES spectra indicate that the obtained thin films consisted of Cu and Zn. The high resolution XPS spectra indicate that as the content of Cu increased, the intensities of Zn2+ decreased. The work function of CuZn thin films increased from 4.87 to 5.36 eV. The conductivity of CuZn alloy thin films was higher than pure metallic thin films.

  4. Comparison of Cu2+ and Zn2+ thermalcatalyst in treating diazo dye

    Science.gov (United States)

    Lau, Y. Y.; Wong, Y. S.; Ong, S. A.; Lutpi, N. A.; Ho, L. N.

    2018-05-01

    This research demonstrates the comparison between copper (II) sulphate (CuSO4) and zinc oxide (ZnO) as thermalcatalysts in thermolysis process for the treatment of diazo reactive black 5 (RB 5) wastewater. CuSO4 was found to be the most effective thermalcatalyst in comparison to ZnO. The color removal efficiency of RB 5 catalysed by CuSO4 and ZnO were 91.55 % at pH 9.5 and 7.36 % at pH 2, respectively. From the UV-Vis wavelength scan, CuSO4 catalyst is able to cleave the molecular structure bonding more efficiently compared to ZnO. ZnO which only show a slight decay on the main chemical network strands: azo bond, naphthalene and benzene rings whereas CuSO4 catalyst is able to fragment azo bond and naphthalene more effectively. The degradation reactions of CuSO4 and ZnO as thermalcatalysts in thermolysis process were compared.

  5. Very large scale heterogeneous integration (VLSHI) and wafer-level vacuum packaging for infrared bolometer focal plane arrays

    Science.gov (United States)

    Forsberg, Fredrik; Roxhed, Niclas; Fischer, Andreas C.; Samel, Björn; Ericsson, Per; Hoivik, Nils; Lapadatu, Adriana; Bring, Martin; Kittilsland, Gjermund; Stemme, Göran; Niklaus, Frank

    2013-09-01

    Imaging in the long wavelength infrared (LWIR) range from 8 to 14 μm is an extremely useful tool for non-contact measurement and imaging of temperature in many industrial, automotive and security applications. However, the cost of the infrared (IR) imaging components has to be significantly reduced to make IR imaging a viable technology for many cost-sensitive applications. This paper demonstrates new and improved fabrication and packaging technologies for next-generation IR imaging detectors based on uncooled IR bolometer focal plane arrays. The proposed technologies include very large scale heterogeneous integration for combining high-performance, SiGe quantum-well bolometers with electronic integrated read-out circuits and CMOS compatible wafer-level vacuum packing. The fabrication and characterization of bolometers with a pitch of 25 μm × 25 μm that are arranged on read-out-wafers in arrays with 320 × 240 pixels are presented. The bolometers contain a multi-layer quantum well SiGe thermistor with a temperature coefficient of resistance of -3.0%/K. The proposed CMOS compatible wafer-level vacuum packaging technology uses Cu-Sn solid-liquid interdiffusion (SLID) bonding. The presented technologies are suitable for implementation in cost-efficient fabless business models with the potential to bring about the cost reduction needed to enable low-cost IR imaging products for industrial, security and automotive applications.

  6. Deciphering ligands' interaction with Cu and Cu2O nanocrystal surfaces by NMR solution tools.

    Science.gov (United States)

    Glaria, Arnaud; Cure, Jérémy; Piettre, Kilian; Coppel, Yannick; Turrin, Cédric-Olivier; Chaudret, Bruno; Fau, Pierre

    2015-01-12

    The hydrogenolysis of [Cu2{(iPrN)2(CCH3)}2] in the presence of hexadecylamine (HDA) or tetradecylphosphonic acid (TDPA) in toluene leads to 6-9 nm copper nanocrystals. Solution NMR spectroscopy has been used to describe the nanoparticle surface chemistry during the dynamic phenomenon of air oxidation. The ligands are organized as multilayered shells around the nanoparticles. The shell of ligands is controlled by both their intermolecular interactions and their bonding strength on the nanocrystals. Under ambient atmosphere, the oxidation rate of colloidal copper nanocrystals closely relies on the chemical nature of the employed ligands (base or acid). Primary amine molecules behave as soft ligands for Cu atoms, but are even more strongly coordinated on surface Cu(I) sites, thus allowing a very efficient corrosion protection of the copper core. On the contrary, the TDPA ligands lead to a rapid oxidation rate of Cu nanoparticles and eventually to the re-dissolution of Cu(II) species at the expense of the nanocrystals. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Handbook of wafer bonding

    CERN Document Server

    Ramm, Peter; Taklo, Maaike M V

    2011-01-01

    Written by an author and editor team from microsystems companies and industry-near research organizations, this handbook and reference presents dependable, first-hand information on bonding technologies.In the first part, researchers from companies and institutions around the world discuss the most reliable and reproducible technologies for the production of bonded wafers. The second part is devoted to current and emerging applications, including microresonators, biosensors and precise measuring devices.

  8. Composition-dependent nanostructure of Cu(In,Ga)Se{sub 2} powders and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Schnohr, C.S., E-mail: c.schnohr@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Kämmer, H.; Steinbach, T.; Gnauck, M. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Rissom, T.; Kaufmann, C.A.; Stephan, C. [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Schorr, S. [Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut für Geologische Wissenschaften, Freie Universität Berlin, Malteserstr. 74-100, 12249 Berlin (Germany)

    2015-05-01

    Atomic-scale structural parameters of Cu(In,Ga)Se{sub 2} powders and polycrystalline thin films were determined as a function of the In and Cu contents using X-ray absorption spectroscopy. No difference in the two sample types is observed for the average bond lengths demonstrating the strong tendency towards bond length conservation typical for tetrahedrally coordinated semiconductors. In contrast, the bond length variation is significantly smaller in the thin films than in the powders, particularly for Cu-poor material. This difference in the nanostructure is proposed to originate from differences in the preparation conditions, most prominently from the different history of Cu composition. - Highlights: • Cu(In,Ga)Se{sub 2} powders and thin films are studied with X-ray absorption spectroscopy. • Structural parameters are determined as a function of the In and Cu contents. • The element-specific average bond lengths are identical for powders and thin films. • The Ga-Se/In-Se bond length variation is smaller for thin films than for powders. • The differences are believed to stem from the different history of the Cu content.

  9. Wafer-Level Membrane-Transfer Process for Fabricating MEMS

    Science.gov (United States)

    Yang, Eui-Hyeok; Wiberg, Dean

    2003-01-01

    A process for transferring an entire wafer-level micromachined silicon structure for mating with and bonding to another such structure has been devised. This process is intended especially for use in wafer-level integration of microelectromechanical systems (MEMS) that have been fabricated on dissimilar substrates. Unlike in some older membrane-transfer processes, there is no use of wax or epoxy during transfer. In this process, the substrate of a wafer-level structure to be transferred serves as a carrier, and is etched away once the transfer has been completed. Another important feature of this process is that two electrodes constitutes an electrostatic actuator array. An SOI wafer and a silicon wafer (see Figure 1) are used as the carrier and electrode wafers, respectively. After oxidation, both wafers are patterned and etched to define a corrugation profile and electrode array, respectively. The polysilicon layer is deposited on the SOI wafer. The carrier wafer is bonded to the electrode wafer by using evaporated indium bumps. The piston pressure of 4 kPa is applied at 156 C in a vacuum chamber to provide hermetic sealing. The substrate of the SOI wafer is etched in a 25 weight percent TMAH bath at 80 C. The exposed buried oxide is then removed by using 49 percent HF droplets after an oxygen plasma ashing. The SOI top silicon layer is etched away by using an SF6 plasma to define the corrugation profile, followed by the HF droplet etching of the remaining oxide. The SF6 plasma with a shadow mask selectively etches the polysilicon membrane, if the transferred membrane structure needs to be patterned. Electrostatic actuators with various electrode gaps have been fabricated by this transfer technique. The gap between the transferred membrane and electrode substrate is very uniform ( 0.1 m across a wafer diameter of 100 mm, provided by optimizing the bonding control). Figure 2 depicts the finished product.

  10. Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

    International Nuclear Information System (INIS)

    Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

    2014-01-01

    Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

  11. Benzotriazole removal on post-Cu CMP cleaning

    Science.gov (United States)

    Jiying, Tang; Yuling, Liu; Ming, Sun; Shiyan, Fan; Yan, Li

    2015-06-01

    This work investigates systematically the effect of FA/O II chelating agent and FA/O I surfactant in alkaline cleaning solutions on benzotriazole (BTA) removal during post-Cu CMP cleaning in GLSI under the condition of static etching. The best detergent formulation for BTA removal can be determined by optimization of the experiments of single factor and compound cleaning solution, which has been further confirmed experimentally by contact angle (CA) measurements. The resulting solution with the best formulation has been measured for the actual production line, and the results demonstrate that the obtained cleaning solution can effectively and efficiently remove BTA, CuO and abrasive SiO2 without basically causing interfacial corrosion. This work demonstrates the possibility of developing a simple, low-cost and environmentally-friendly cleaning solution to effectively solve the issues of BTA removal on post-Cu CMP cleaning in a multi-layered copper wafer. Project supported by the Major National Science and Technology Special Projects (No. 2009ZX02308).

  12. Growth of intermetallics between Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layered structures

    International Nuclear Information System (INIS)

    Horváth, Barbara; Illés, Balázs; Shinohara, Tadashi

    2014-01-01

    Intermetallic growth mechanisms and rates are investigated in Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layer systems. An 8–10 μm thick Sn surface finish layer was electroplated onto a Cu substrate with a 1.5–2 μm thick Ni or Ag barrier layer. In order to induce intermetallic layer growth, the samples were aged in elevated temperatures: 50 °C and 125 °C. Intermetallic layer growth was checked by focused ion beam–scanning ion microscope. The microstructures and chemical compositions of the intermetallic layers were observed with a transmission electron microscope. It has been found that Ni barrier layers can effectively block the development of Cu 6 Sn 5 intermetallics. The intermetallic growth characteristics in the Sn/Cu and Sn/Ni/Cu systems are very similar. The intermetallic layer grows towards the Sn layer and forms a discrete layer. Differences were observed only in the growth gradients and surface roughness of the intermetallic layer which may explain the different tin whiskering properties. It was observed that the intermetallic layer growth mechanisms are completely different in the Ag barrier layers compared to the Ni layers. In the case of Sn/Ag/Cu systems, the Sn and Cu diffused through the Ag layer, formed Cu 6 Sn 5 intermetallics mainly at the Sn/Ag interface and consumed the Ag barrier layer. - Highlights: • Intermetallic growth was characterised in Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layer systems. • Intermetallic growth rates and roughness are similar in the Sn/Cu and Sn/Ni/Cu systems. • Sn/Ni/Cu system contains the following intermetallic layer structure Sn–Ni3Sn4–Ni3Sn2–Ni3Sn–Ni. • In the case of Sn/Ag/Cu systems the Sn and Cu diffusion consumes the Ag barrier layer. • When Cu reaches the Sn/Ag interface a large amount of Cu 6 Sn 5 forms above the Ag layer

  13. Systematics of Structural, Phase Stability, and Cohesive Properties of η'-Cu6(Sn,In)5 Compounds Occurring in In-Sn/Cu Solder Joints

    Science.gov (United States)

    Ramos, S. B.; González Lemus, N. V.; Deluque Toro, C. E.; Cabeza, G. F.; Fernández Guillermet, A.

    2017-07-01

    Motivated by the high solubility of In in ( mC44) η'-Cu6Sn5 compound as well as the occurrence of an In-doped η'-intermetallic in the microstructure of Cu/In-Sn/Cu solder joints, a theoretical study has been carried out to investigate the various physical effects of incorporating In at Sn Wyckoff sites of the binary η'-phase. Systematic ab initio calculations using the projected augmented wave method and Vienna Ab initio Simulation Package were used to determine the composition dependence of the structural and cohesive properties of η'-Cu6(Sn,In)5 compounds, compared with those expected from the binary end-member compounds Cu6Sn5 and Cu6In5. The molar volume shows significant deviations from Vegard's law. The predicted composition dependence of the cohesive properties is discussed using two complementary approaches, viz. a valence-electron density approach as well as a bond-number approach, both accounting for the roughly linear dependence of the cohesive energy on the In content. A microscopic interpretation for this general trend is given in terms of the key contributions to chemical bonding in this class of compounds, namely Cu d-electron overlap and hybridization of Cu d-states with In and Sn p-electron states. Moreover, a crystallographic site approach is developed to accurately establish the phase-stabilizing effect of incorporating In at specific Wyckoff positions of the ( mC44) η'-Cu6Sn5 structure.

  14. Si-to-Si wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Reus, Roger De; Lindahl, M.

    1997-01-01

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed...

  15. CuO reduction induced formation of CuO/Cu2O hybrid oxides

    Science.gov (United States)

    Yuan, Lu; Yin, Qiyue; Wang, Yiqian; Zhou, Guangwen

    2013-12-01

    Reduction of CuO nanowires results in the formation of a unique hierarchical hybrid nanostructure, in which the parent oxide phase (CuO) works as the skeleton while the lower oxide (Cu2O) resulting from the reduction reaction forms as partially embedded nanoparticles that decorate the skeleton of the parent oxide. Using in situ transmission electron microscopy observations of the reduction process of CuO nanowires, we demonstrate that the formation of such a hierarchical hybrid oxide structure is induced by topotactic nucleation and growth of Cu2O islands on the parent CuO nanowires.

  16. Morphology and chemical composition of Cu/Sn/Cu and Cu(5 at-%Ni)/Sn/Cu(5 at-%Ni) interconnections

    NARCIS (Netherlands)

    Wierzbicka-Miernik, A.; Wojewoda-Budka, J.; Litynska-Dobrzynska, L.; Kodentsov, A.; Zieba, P.

    2012-01-01

    In the present paper, scanning and transmission electron microscopies as well as energy dispersive X-ray spectroscopy investigations were performed to describe the morphology and chemical composition of the intermetallic phases growing in Cu/Sn/Cu and Cu(Ni)/Sn/Cu(Ni) interconnections during the

  17. Mechanics of wafer bonding: Effect of clamping

    Science.gov (United States)

    Turner, K. T.; Thouless, M. D.; Spearing, S. M.

    2004-01-01

    A mechanics-based model is developed to examine the effects of clamping during wafer bonding processes. The model provides closed-form expressions that relate the initial geometry and elastic properties of the wafers to the final shape of the bonded pair and the strain energy release rate at the interface for two different clamping configurations. The results demonstrate that the curvature of bonded pairs may be controlled through the use of specific clamping arrangements during the bonding process. Furthermore, it is demonstrated that the strain energy release rate depends on the clamping configuration and that using applied loads usually leads to an undesirable increase in the strain energy release rate. The results are discussed in detail and implications for process development and bonding tool design are highlighted.

  18. Bond strength tests between silicon wafers and duran tubes (fusion bonded fluidic interconnects)

    NARCIS (Netherlands)

    Fazal, I.; Berenschot, Johan W.; de Boer, J.H.; Jansen, Henricus V.; Elwenspoek, Michael Curt

    2005-01-01

    The fusion bond strength of glass tubes with standard silicon wafers is presented. Experiments with plain silicon wafers and those coated with silicon oxide and silicon nitride are presented. Results obtained are discussed in terms of homogeneity and strength of fusion bond. High pressure testing

  19. Cu-catalyzed C(sp³)-H bond activation reaction for direct preparation of cycloallyl esters from cycloalkanes and aromatic aldehydes.

    Science.gov (United States)

    Zhao, Jincan; Fang, Hong; Han, Jianlin; Pan, Yi

    2014-05-02

    Cu-catalyzed dehydrogenation-olefination and esterification of C(sp(3))-H bonds of cycloalkanes with TBHP as an oxidant has been developed. The reaction involves four C-H bond activations and gives cycloallyl ester products directly from cycloalkanes and aromatic aldehydes.

  20. Evaluation of Cu as an interlayer in Be/F82H diffusion bonds for ITER TBM

    Energy Technology Data Exchange (ETDEWEB)

    Hunt, R.M., E-mail: rhunt@ucla.edu [Mechanical and Aerospace Engineering Department, UCLA, 44-128 Engineering IV, 420 Westwood Plaza, Los Angeles, CA 90025-1597 (United States); Goods, S.H., E-mail: shgoods@sandia.gov [Sandia National Laboratories, 7011 East Ave., Livermore, CA 94550 (United States); Ying, A., E-mail: ying@fusion.ucla.edu [Mechanical and Aerospace Engineering Department, UCLA, 44-128 Engineering IV, 420 Westwood Plaza, Los Angeles, CA 90025-1597 (United States); Dorn, C.K., E-mail: christopher_dorn@brushwellman.com [Brush Wellman Inc., 14710 W. Portage River So. Road, Elmore, OH 43416 (United States); Abdou, M., E-mail: abdou@fusion.ucla.edu [Mechanical and Aerospace Engineering Department, UCLA, 44-128 Engineering IV, 420 Westwood Plaza, Los Angeles, CA 90025-1597 (United States)

    2011-10-01

    Copper has been investigated as a potential interlayer material for diffusion bonds between beryllium and Reduced Activation Ferritic/Martensitic (RAFM) steel. Utilizing Hot Isostatic Pressing (HIP), copper was directly bonded to a RAFM steel, F82H, at 650 deg. C, 700 deg. C, 750 deg. C, 800 deg. C and 850 deg. C, under 103 MPa for 2 h. Interdiffusion across the bonded interface was limited to 1 {mu}m or less, even at the highest HIP'ing temperature. Through mechanical testing it was found that samples HIP'ed at 750 deg. C and above remain bonded up to 211 MPa under tensile loading, at which point ductile failure occurred in the bulk copper. As titanium will be used as a barrier layer to prevent the formation of brittle Be/Cu intermetallics, additional annealing studies were performed on copper samples coated with a titanium thin film to study Ti/Cu interdiffusion characteristics. Samples were heated to temperatures between 650 deg. C and 850 deg. C for 2 h in order to mimic the range of likely HIP temperatures. A correlation was drawn between HIP temperature and diffusion depth for use in determining the minimum Ti film thickness necessary to block diffusion in the Be/F82H joint.

  1. Cu(II)-catalyzed esterification reaction via aerobic oxidative cleavage of C(CO)-C(alkyl) bonds.

    Science.gov (United States)

    Ma, Ran; He, Liang-Nian; Liu, An-Hua; Song, Qing-Wen

    2016-02-04

    A novel Cu(II)-catalyzed aerobic oxidative esterification of simple ketones for the synthesis of esters has been developed with wide functional group tolerance. This process is assumed to go through a tandem sequence consisting of α-oxygenation/esterification/nucleophilic addition/C-C bond cleavage and carbon dioxide is released as the only byproduct.

  2. Porous HKUST-1 derived CuO/Cu2O shell wrapped Cu(OH)2 derived CuO/Cu2O core nanowire arrays for electrochemical nonenzymatic glucose sensors with ultrahigh sensitivity

    Science.gov (United States)

    Yu, Cuiping; Cui, Jiewu; Wang, Yan; Zheng, Hongmei; Zhang, Jianfang; Shu, Xia; Liu, Jiaqin; Zhang, Yong; Wu, Yucheng

    2018-05-01

    Self-supported CuO/Cu2O@CuO/Cu2O core-shell nanowire arrays (NWAs) are successfully fabricated by a simple and efficient method in this paper. Anodized Cu(OH)2 NWAs could in-situ convert to HKUST-1 at room temperature easily. Cu(OH)2 NWAs cores and HKUST-1 shells transform into CuO/Cu2O simultaneously after calcinations and form CuO/Cu2O@CuO/Cu2O core-shell NWAs. This smart configuration of the core-shell structure not only avoids the agglomeration of the traditional MOF-derived materials in particle-shape, but also facilitates the ion diffusion and increases the active sites. This novel structure is employed as substrate to construct nonenzymatic glucose sensors. The results indicate that glucose sensor based on CuO/Cu2O@CuO/Cu2O core-shell NWAs presents ultrahigh sensitivity (10,090 μA mM-1 cm-2), low detection limit (0.48 μM) and wide linear range (0.99-1,330 μM). In addition, it also shows excellent anti-interference ability toward uric acid, ascorbic acid and L-Cysteine co-existing with glucose, good reproducibility and superior ability of real sample analysis.

  3. Cu(I)/Cu(II) mixed-valence surface complexes of S-[(2-hydroxyamino)-2-oxoethyl]-N,N-dibutyldithiocarbamate: Hydrophobic mechanism to malachite flotation.

    Science.gov (United States)

    Liu, Sheng; Zhong, Hong; Liu, Guangyi; Xu, Zhenghe

    2018-02-15

    Hydroxamate and sulfhydryl surfactants are effective collectors for flotation of copper minerals. The combination application of hydroxamate and sulfhydryl collectors has been proved to be an effective approach for improving the flotation recovery of non-sulfide copper minerals. A surfactant owing both hydroxamate and dithiocarbamate groups might exhibit strong affinity to non-sulfide copper minerals through double sites adsorption, rendering an enhanced hydrophobization to non-sulfide copper minerals flotation. The flotation performance of S-[(2-hydroxyamino)-2-oxoethyl]- N,N-dibutyldithiocarbamate (HABTC) to malachite, calcite and quartz were first evaluated through systematic micro-flotation experiments. HABTC's hydrophobic mechanism to malachite was further investigated and analyzed by zeta potential, Fourier transform infrared spectroscopy (FTIR), time-of-flight secondary ion mass spectrometry (ToF-SIMS) and X-ray photoelectron spectroscopy (XPS). The micro-flotation results demonstrated HABTC was an excellent collector for malachite flotation and exhibited favorable selectivity for flotation separation of malachite from quartz or calcite under pH 8.5-10.3. Zeta potential and FTIR implied that HABTC might bond with the surface copper atoms of malachite, with releasing the H + ions of its hydroxamate group into pulp. ToF-SIMS provided clear evidences that the Cu-hydroxamate and Cu-dithiocarbamate groups were formed on malachite surfaces after HABTC adsorption. XPS revealed that Cu(I)/Cu(II) mixed-valence surface complexes of HABTC anchored on malachite through formation of Cu(I)S and Cu(II)O bonds, accompanying with reduction of partial surface Cu(II) to Cu(I). The Cu(I)/Cu(II) mixed-valence double chelating character and "chair"-shape N,N-dibutyldithiocarbamate hydrophobic group, resulting in an enhanced affinity and hydrophobization of HABTC to malachite flotation. Copyright © 2017 Elsevier Inc. All rights reserved.

  4. Effects of plasma cleaning of the Cu seed layer surface on Cu electroplating

    International Nuclear Information System (INIS)

    O, Jun Hwan; Lee, Seong Wook; Kim, Jae Bum; Lee, Chong Mu

    2001-01-01

    Effects of plasma pretreatment to Cu seed/tantalum nitride (TaN)/ borophosphosilicate glass (BPSG) samples on copper (Cu) electroplating were investigated. Copper seed layers were deposited by magnetron sputtering onto tantalum nitride barrier layers before electroplating copper in the forward pulsed mode. The Cu seed layer was cleaned by plasma H 2 and N 2 prior to electroplating a copper film. Cu films electroplated on the copper seed layer with plasma pretreatment showed better electrical and physical properties such as electrical resistivities, surface morphologies, levels of impurities, adhesion and surface roughness than those without plasma pretreatment. It is shown that carbon and metal oxide contaminants at the sputtered Cu seed/TaN surface could be effectively removed by plasma H 2 cleaning. The degree of the (111) prefered orientation of the Cu film with plasma H 2 pretreatment is as high as pulse plated Cu film without plasma pretreatment. Also, plasma H 2 precleaning is more effective in enhancing the Cu electroplating properties onto the Cu seed layer than plasma N 2 precleaning

  5. Comparative study of Cu-Zr and Cu-Ru alloy films for barrier-free Cu metallization

    International Nuclear Information System (INIS)

    Wang Ying; Cao Fei; Zhang Milin; Liu Yuntao

    2011-01-01

    The properties of Cu-Zr and Cu-Ru alloy films were comparatively studied to evaluate their potential use as alloying elements. Cu alloy films were deposited on SiO 2 /Si substrates by magnetron sputtering. Samples were subsequently annealed and analyzed by four-point probe measurement, X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy and Auger electron spectroscopy. X-ray diffraction data suggest that Cu film has preferential (111) crystal orientation and no extra peak corresponding to any compound of Cu, Zr, Ru, and Si. According to transmission electron microscopy results, Cu grains grow in size for both systems but the grain sizes of the Cu alloy films are smaller than that of pure Cu films. These results indicate that Cu-Zr film is suitable for advanced barrier-free metallization in terms of interfacial stability and lower resistivity.

  6. Electron velocity map imaging and theoretical study on CuXH (X = O and S) anions

    Science.gov (United States)

    Qin, Zhengbo; Wang, Hui; Ren, Yangdi; Zheng, Xianfeng; Cui, Zhifeng; Tang, Zichao

    2018-01-01

    Vibrationally resolved photoelectron spectra of CuOH- and CuSH- have been determined via velocity map imaging method to investigate the transitions of X1A‧ ← X2A‧ at 532 nm. Adiabatic detachment energies of CuOH- and CuSH- are assigned to 0.995(12) and 1.098(12) eV, respectively. Combined theoretical calculations with Franck-Condon simulations, it allows extracting the vibrational frequencies in neutral, which yields 629(32) cm-1 with Cusbnd O stretching mode and 387(24) cm-1 with Cusbnd S stretching mode for CuXH (X = O and S). Parallel transition properties of photoelectron angular distributions (PADs) for both species are correlated to the photodetachment of SOMO orbitals, which mainly involved in the Cu atom s orbital and partial s orbital in other atoms. Based on chemical bonding analyses (Wiberg, NAO, Mayer, NRT, and ELF), it is suggested that a trend is observed with a subtle variation of covalent component from weak covalent behavior between Cusbnd O in CuOH-1/0 to stronger covalent bonding between Cusbnd S in CuSH-1/0 (especially for non-ignorable covalent component in CuSH species) though ionic bonding dominates both in Cusbnd O and Cusbnd S bonds for the two systems.

  7. CH{sub 4} dehydrogenation on Cu(1 1 1), Cu@Cu(1 1 1), Rh@Cu(1 1 1) and RhCu(1 1 1) surfaces: A comparison studies of catalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Riguang; Duan, Tian [Key Laboratory of Coal Science and Technology of Ministry of Education and Shanxi Province, Taiyuan University of Technology, Taiyuan 030024, Shanxi (China); Ling, Lixia [Key Laboratory of Coal Science and Technology of Ministry of Education and Shanxi Province, Taiyuan University of Technology, Taiyuan 030024, Shanxi (China); Research Institute of Special Chemicals, Taiyuan University of Technology, Taiyuan 030024, Shanxi (China); Wang, Baojun, E-mail: wangbaojun@tyut.edu.cn [Key Laboratory of Coal Science and Technology of Ministry of Education and Shanxi Province, Taiyuan University of Technology, Taiyuan 030024, Shanxi (China)

    2015-06-30

    Highlights: • Adsorbed Rh atom on Cu catalyst exhibits better catalytic activity for CH{sub 4} dehydrogenation. • The adsorbed Rh atom is the reaction active center for CH{sub 4} dehydrogenation. • The morphology of Cu substrate has negligible effect on CH{sub 4} dehydrogenation. - Abstract: In the CVD growth of graphene, the reaction barriers of the dehydrogenation for hydrocarbon molecules directly decide the graphene CVD growth temperature. In this study, density functional theory method has been employed to comparatively probe into CH{sub 4} dehydrogenation on four types of Cu(1 1 1) surface, including the flat Cu(1 1 1) surface (labeled as Cu(1 1 1)) and the Cu(1 1 1) surface with one surface Cu atom substituted by one Rh atom (labeled as RhCu(1 1 1)), as well as the Cu(1 1 1) surface with one Cu or Rh adatom (labeled as Cu@Cu(1 1 1) and Rh@Cu(1 1 1), respectively). Our results show that the highest barrier of the whole CH{sub 4} dehydrogenation process is remarkably reduced from 448.7 and 418.4 kJ mol{sup −1} on the flat Cu(1 1 1) and Cu@Cu(1 1 1) surfaces to 258.9 kJ mol{sup −1} on RhCu(1 1 1) surface, and to 180.0 kJ mol{sup −1} on Rh@Cu(1 1 1) surface, indicating that the adsorbed or substituted Rh atom on Cu catalyst can exhibit better catalytic activity for CH{sub 4} complete dehydrogenation; meanwhile, since the differences for the highest barrier between Cu@Cu(1 1 1) and Cu(1 1 1) surfaces are smaller, the catalytic behaviors of Cu@Cu(1 1 1) surface are very close to the flat Cu(1 1 1) surface, suggesting that the morphology of Cu substrate does not obviously affect the dehydrogenation of CH{sub 4}, which accords with the reported experimental observations. As a result, the adsorbed or substituted Rh atom on Cu catalyst exhibit a better catalytic activity for CH{sub 4} dehydrogenation compared to the pure Cu catalyst, especially on Rh-adsorbed Cu catalyst, we can conclude that the potential of synthesizing high-quality graphene with the

  8. Species dependence of [64Cu]Cu-Bis(thiosemicarbazone) radiopharmaceutical binding to serum albumins

    International Nuclear Information System (INIS)

    Basken, Nathan E.; Mathias, Carla J.; Lipka, Alexander E.; Green, Mark A.

    2008-01-01

    Introduction: Interactions of three copper(II) bis(thiosemicarbazone) positron emission tomography radiopharmaceuticals with human serum albumin, and the serum albumins of four additional mammalian species, were evaluated. Methods: 64 Cu-labeled diacetyl bis(N 4 -methylthiosemicarbazonato)copper(II) (Cu-ATSM), pyruvaldehyde bis(N 4 -methylthiosemicarbazonato)copper(II) (Cu-PTSM) and ethylglyoxal bis(thiosemicarbazonato)copper(II) (Cu-ETS) were synthesized and their binding to human, canine, rat, baboon and porcine serum albumins quantified by ultrafiltration. Protein binding was also measured for each tracer in human, porcine, rat and mouse serum. Results: The interaction of these neutral, lipophilic copper chelates with serum albumin is highly compound- and species-dependent. Cu-PTSM and Cu-ATSM exhibit particularly high affinity for human serum albumin (HSA), while the albumin binding of Cu-ETS is relatively insensitive to species. At HSA concentrations of 40 mg/ml, '% free' (non-albumin-bound) levels of radiopharmaceutical were 4.0±0.1%, 5.3±0.2% and 38.6±0.8% for Cu-PTSM, Cu-ATSM and Cu-ETS, respectively. Conclusions: Species-dependent variations in radiopharmaceutical binding to serum albumin may need to be considered when using animal models to predict the distribution and kinetics of these compounds in humans

  9. Growth of CuPd nanoalloys encapsulated in carbon-shell

    Energy Technology Data Exchange (ETDEWEB)

    Kang, H. Y.; Wang, H. P., E-mail: wanghp@mail.ncku.edu.tw [National Cheng Kung University, Department of Environmental Engineering (China)

    2013-05-15

    Preparation of nanostructured copper-palladium (CuPd) alloys is getting more attention because specific catalytic properties can be tuned by controlling their composition, size, and shape. Thus, a better understanding especially in the formation mechanism of the CuPd nanoalloys is of great importance in designing the catalysts. Growth of CuPd nanoalloys encapsulated in carbon-shell (CuPd-C) was, therefore, studied by in situ synchrotron small-angle X-ray scattering during temperature-programed carbonization (TPC) of the Cu{sup 2+}- and Pd{sup 2+}-{beta}-cyclodextrin complexes. A rapid reduction of Cu{sup 2+} and Pd{sup 2+} with nucleation is found at the temperatures of <423 K, followed by coalescence at 453-573 K. The well-dispersed CuPd nanoalloys having the sizes of 7.6-7.9 nm in diameter are encapsulated in carbon-shell of 1.4-1.8 nm in thickness. The refined extended X-ray absorption fine structure spectra indicate that the bond distances of the first-shell Cu-Pd are 2.61-2.64 A with the coordination numbers of 5.1-5.6. A homogeneous CuPd alloy at the Cu/Pd atomic ratio of 1 is observed. Note that at the high Cu/Pd ratio, Cu is enriched on the CuPd nanoalloy surfaces, attributable to the relatively low surface free energy of Cu.

  10. CuO-Functionalized Silicon Photoanodes for Photoelectrochemical Water Splitting Devices.

    Science.gov (United States)

    Shi, Yuanyuan; Gimbert-Suriñach, Carolina; Han, Tingting; Berardi, Serena; Lanza, Mario; Llobet, Antoni

    2016-01-13

    One main difficulty for the technological development of photoelectrochemical (PEC) water splitting (WS) devices is the fabrication of active, stable and cost-effective photoelectrodes that ensure high performance. Here, we report the development of a CuO/Silicon based photoanode, which shows an onset potential for the water oxidation of 0.53 V vs SCE at pH 9, that is, an overpotential of 75 mV, and high stability above 10 h. These values account for a photovoltage of 420 mV due to the absorbed photons by silicon, as proven by comparing with analogous CuO/FTO electrodes that are not photoactive. The photoanodes have been fabricated by sputtering a thin film of Cu(0) on commercially available n-type Si wafers, followed by a photoelectrochemical treatment in basic pH conditions. The resulting CuO/Cu layer acts as (1) protective layer to avoid the corrosion of nSi, (2) p-type hole conducting layer for efficient charge separation and transportation, and (3) electrocatalyst to reduce the overpotential of the water oxidation reaction. The low cost, low toxicity, and good performance of CuO-based coatings can be an attractive solution to functionalize unstable materials for solar energy conversion.

  11. [Co(NH3)6]3[Cu4(OH)(CO3)8].2H2O--a new carbonato-copper(II) anion stabilized by extensive hydrogen bonding.

    Science.gov (United States)

    Abrahams, Brendan F; Haywood, Marissa G; Robson, Richard

    2004-04-21

    Addition of Co(NH3)6(3+) to aqueous solutions of Cu(II) in excess carbonate promotes the assembly of a new highly charged carbonato-copper(II) anion, [Cu4(OH)(CO3)8](9-), which contains an unusual mu4 hydroxo-bridged square Cu4 arrangement, stabilised in the crystal by no less than forty hydrogen bonds (< 3 Angstrom) to hexammine cations.

  12. Voltage-assisted polymer wafer bonding

    International Nuclear Information System (INIS)

    Varsanik, J S; Bernstein, J J

    2012-01-01

    Polymer wafer bonding is a widely used process for fabrication of microfluidic devices. However, best practices for polymer bonds do not achieve sufficient bond strength for many applications. By applying a voltage to a polymer bond in a process called voltage-assisted bonding, bond strength is shown to improve dramatically for two polymers (Cytop™ and poly(methyl methacrylate)). Several experiments were performed to provide a starting point for further exploration of this technique. An optimal voltage range is experimentally observed with a reduction in bonding strength at higher voltages. Additionally, voltage-assisted bonding is shown to reduce void diameter due to bond defects. An electrostatic force model is proposed to explain the improved bond characteristics. This process can be used to improve bond strength for most polymers. (paper)

  13. Efficient strategy to Cu/Si catalyst into vertically aligned carbon ...

    Indian Academy of Sciences (India)

    Abstract. Bamboo-shaped vertically aligned carbon nanotubes (bs-VACNTs) were fabricated on Cu/Si catalyst by ... on Si wafer material when compared to the other commer- ..... [3] Li H, Zhao N, He C, Shi C, Du X, Li J and Cui Q 2008 Mater.

  14. Tailoring Graphene Morphology and Orientation on Cu(100), Cu(110), and Cu(111)

    Science.gov (United States)

    Jacobberger, Robert; Arnold, Michael

    2013-03-01

    Graphene CVD on Cu is phenomenologically complex, yielding diverse crystal morphologies, such as lobes, dendrites, stars, and hexagons, of various orientations. We present a comprehensive study of the evolution of these morphologies as a function of Cu surface orientation, pressure, H2:CH4, and nucleation density. Growth was studied on ultra-smooth, epitaxial Cu films inside Cu enclosures to minimize factors that normally complicate growth. With low H2:CH4, Mullins-Sekerka instabilities propagate to form dendrites, indicating transport limited growth. In LPCVD, the dendrites extend hundreds of microns in the 100, 111, and 110 directions on Cu(100), (110), and (111) and are perturbed by twin boundaries. In APCVD, multiple preferred dendrite orientations exist. With increasing H2:CH4, the dendritic nature of growth is suppressed. In LPCVD, square, rectangle, and hexagon crystals form on Cu(100), (110) and (111), reflecting the Cu crystallography. In APCVD, the morphology becomes hexagonal on each surface. If given ample time, every growth regime yields high-quality monolayers with D:G Raman ratio rationally tailor the graphene crystal morphology and orientation.

  15. CO2 activation on bimetallic CuNi nanoparticles

    Directory of Open Access Journals (Sweden)

    Natalie Austin

    2016-10-01

    Full Text Available Density functional theory calculations have been performed to investigate the structural, electronic, and CO2 adsorption properties of 55-atom bimetallic CuNi nanoparticles (NPs in core-shell and decorated architectures, as well as of their monometallic counterparts. Our results revealed that with respect to the monometallic Cu55 and Ni55 parents, the formation of decorated Cu12Ni43 and core-shell Cu42Ni13 are energetically favorable. We found that CO2 chemisorbs on monometallic Ni55, core-shell Cu13Ni42, and decorated Cu12Ni43 and Cu43Ni12, whereas, it physisorbs on monometallic Cu55 and core-shell Cu42Ni13. The presence of surface Ni on the NPs is key in strongly adsorbing and activating the CO2 molecule (linear to bent transition and elongation of C˭O bonds. This activation occurs through a charge transfer from the NPs to the CO2 molecule, where the local metal d-orbital density localization on surface Ni plays a pivotal role. This work identifies insightful structure-property relationships for CO2 activation and highlights the importance of keeping a balance between NP stability and CO2 adsorption behavior in designing catalytic bimetallic NPs that activate CO2.

  16. First-principle Calculations of Mechanical Properties of Al2Cu, Al2CuMg and MgZn2 Intermetallics in High Strength Aluminum Alloys

    Directory of Open Access Journals (Sweden)

    LIAO Fei

    2016-12-01

    Full Text Available Structural stabilities, mechanical properties and electronic structures of Al2Cu, Al2CuMg and MgZn2 intermetallics in Al-Zn-Mg-Cu aluminum alloys were determined from the first-principle calculations by VASP based on the density functional theory. The results show that the cohesive energy (Ecoh decreases in the order MgZn2 > Al2CuMg > Al2Cu, whereas the formation enthalpy (ΔH decreases in the order MgZn2 > Al2Cu > Al2CuMg. Al2Cu can act as a strengthening phase for its ductile and high Young's modulus. The Al2CuMg phase exhibits elastic anisotropy and may act as a crack initiation point. MgZn2 has good plasticity and low melting point, which is the main strengthening phase in the Al-Zn-Mg-Cu aluminum alloys. Metallic bonding mode coexists with a fractional ionic interaction in Al2Cu, Al2CuMg and MgZn2, and that improves the structural stability. In order to improve the alloys' performance further, the generation of MgZn2 phase should be promoted by increasing Zn content while Mg and Cu contents are decreased properly.

  17. 14N nuclear quadrupole interaction in Cu(II) doped L-alanine

    International Nuclear Information System (INIS)

    Murgich, J.; Calvo, R.; Oseroff, S.B.; Instituto Venezolano de Investigaciones Cientificas, Caracas. Dept. de Quimica)

    1980-01-01

    The 14 N nuclear quadrupole interaction tensor Psub(N) measured by ENDOR in Cu(II) doped L-alanine is analyzed in terms of the Townes and Daily theory assuming a tetra-hedrally bonded N atom. The results of this analysis are compared with those for the 14 N in pure L-alanine and it is found that the principal directions of the Psub(N) tensor are drastically changed upon metal complexation as a consequence of the higher electron affinity of Cu(II) with respect to C and H. Comparison of the corresponding bond populations in pure and Cu(II) doped L-alanine indicates that the Cu draws 0.11 more electron from the N than the substituted H atom. (orig.)

  18. Interfacial phase formation of Al-Cu bimetal by solid-liquid casting method

    Directory of Open Access Journals (Sweden)

    Ying Fu

    2017-05-01

    Full Text Available The solid-liquid method was used to prepare the continuous casting of copper cladding aluminium by liquid aluminum alloy and solid copper, and the interfacial phase formation of Al-Cu bimetal at different pouring temperatures (700, 750, 800 oC was investigated by means of metallograph, scanning electron microscopy (SEM and energy dispersive spectrometry (EDS methods. The results showed that the pouring temperature of aluminum melt had an important influence on the element diffusion of Cu from the solid Cu to Al alloy melt and the reactions between Al and Cu, as well as the morphology of the Al-Cu interface. When the pouring temperature was 800 oC, there were abundant Al-Cu intermetallic compounds (IMCs near the interface. However, a lower pouring temperature (700 oC resulted in the formation of cavities which was detrimental to the bonding and mechanical properties. Under the conditions in this study, the good metallurgical bonding of Al-Cu was achieved at a pouring temperature of 750 oC.

  19. Cu-62, Cu-64 and Cu-66 production with 4.2 MeV deuterons

    International Nuclear Information System (INIS)

    Avila, Mario; Morales, J.R.; Riquelme, H.O.

    1996-01-01

    Full text: The natural copper irradiation with deuterons produces the Cu-62, Cu-64 and Cu-66 radionuclides. Of two radioisotopes, those with deficiencies in neutrons, are applied in nuclear medicine diagnostic processes, mainly for the nuclear characteristic of the decay modes. The positron emitters, of short life mean Cu-62 (9.1 min, β + ) and Cu(12.7 h), are radionuclides applied in radio pharmacological preparation for brain, core, blood flux studies. The radiochemical process consists in the de solution of the irradiated metallic copper target, in acid medium. The result solution, can be neutralized with a base or a buffer at wished pH. Using a deuteron beam of 4,2 ± 0,1 MeV energy has been obtained total yields of 1,103 ± 0,011 μCl/μAh medium for 62 Cu and of 0,148 ± 0,015 μCl/μAh for 64 Cu

  20. Effect of copper content on the thermal conductivity and thermal expansion of Al–Cu/diamond composites

    International Nuclear Information System (INIS)

    Wu, Jianhua; Zhang, Hailong; Zhang, Yang; Li, Jianwei; Wang, Xitao

    2012-01-01

    Highlights: ► Al–Cu/diamond composites have been produced by a squeeze casting method. ► Cu alloying is an effective approach to promoting interface bonding between metal matrix and diamond. ► Alloying Cu to Al matrix improves thermal conductivity and reduces coefficient of thermal expansion of the composites. -- Abstract: Al–Cu matrix composites reinforced with diamond particles (Al–Cu/diamond composites) have been produced by a squeeze casting method. Cu content added to Al matrix was varied from 0 to 3.0 wt.% to detect the effect on thermal conductivity and thermal expansion behavior of the resultant Al–Cu/diamond composites. The measured thermal conductivity for the Al–Cu/diamond composites increased from 210 to 330 W/m/K with increasing Cu content from 0 to 3.0 wt.%. Accordingly, the coefficient of thermal expansion (CTE) was tailored from 13 × 10 −6 to 6 × 10 −6 /K, which is compatible with the CTE of semiconductors in electronic packaging applications. The enhanced thermal conductivity and reduced coefficient of thermal expansion were ascribed to strong interface bonding in the Al–Cu/diamond composites. Cu addition has lowered the melting point and resulted in the formation of Al 2 Cu phase in Al matrix. This is the underlying mechanism responsible for the strengthening of Al–Cu/diamond interface. The results show that Cu alloying is an effective approach to promoting interface bonding between Al and diamond.

  1. Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

    Science.gov (United States)

    Inglese, Alessandro; Laine, Hannu S.; Vähänissi, Ville; Savin, Hele

    2018-01-01

    The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be readily relocated during device fabrication from the wafer bulk, i.e. the region affected by Cu-LID, to the surface phosphorus-doped emitter. This contribution examines in detail the impact of gettering by industrially relevant phosphorus layers on the strength of Cu-LID effects. We find that phosphorus gettering does not always prevent the occurrence of Cu-LID. Specifically, air-cooling after an isothermal anneal at 800°C results in only weak impurity segregation to the phosphorus-doped layer, which turns out to be insufficient for effectively mitigating Cu-LID effects. Furthermore, we show that the gettering efficiency can be enhanced through the addition of a slow cooling ramp (-4°C/min) between 800°C and 600°C, resulting in the nearly complete disappearance of Cu-LID effects.

  2. Species dependence of [{sup 64}Cu]Cu-Bis(thiosemicarbazone) radiopharmaceutical binding to serum albumins

    Energy Technology Data Exchange (ETDEWEB)

    Basken, Nathan E. [Division of Nuclear Pharmacy, Department of Industrial and Physical Pharmacy, Purdue University, West Lafayette, IN 47907 (United States)], E-mail: nbasken@purdue.edu; Mathias, Carla J. [Division of Nuclear Pharmacy, Department of Industrial and Physical Pharmacy, Purdue University, West Lafayette, IN 47907 (United States); Lipka, Alexander E. [Department of Statistics, Purdue University, West Lafayette, IN 47907 (United States); Green, Mark A. [Division of Nuclear Pharmacy, Department of Industrial and Physical Pharmacy, Purdue University, West Lafayette, IN 47907 (United States)], E-mail: magreen@purdue.edu

    2008-04-15

    Introduction: Interactions of three copper(II) bis(thiosemicarbazone) positron emission tomography radiopharmaceuticals with human serum albumin, and the serum albumins of four additional mammalian species, were evaluated. Methods: {sup 64}Cu-labeled diacetyl bis(N{sup 4}-methylthiosemicarbazonato)copper(II) (Cu-ATSM), pyruvaldehyde bis(N{sup 4}-methylthiosemicarbazonato)copper(II) (Cu-PTSM) and ethylglyoxal bis(thiosemicarbazonato)copper(II) (Cu-ETS) were synthesized and their binding to human, canine, rat, baboon and porcine serum albumins quantified by ultrafiltration. Protein binding was also measured for each tracer in human, porcine, rat and mouse serum. Results: The interaction of these neutral, lipophilic copper chelates with serum albumin is highly compound- and species-dependent. Cu-PTSM and Cu-ATSM exhibit particularly high affinity for human serum albumin (HSA), while the albumin binding of Cu-ETS is relatively insensitive to species. At HSA concentrations of 40 mg/ml, '% free' (non-albumin-bound) levels of radiopharmaceutical were 4.0{+-}0.1%, 5.3{+-}0.2% and 38.6{+-}0.8% for Cu-PTSM, Cu-ATSM and Cu-ETS, respectively. Conclusions: Species-dependent variations in radiopharmaceutical binding to serum albumin may need to be considered when using animal models to predict the distribution and kinetics of these compounds in humans.

  3. Preparation and Optoelectrical Properties of p-CuO/n-Si Heterojunction by a Simple Sol-Gel Method

    Science.gov (United States)

    He, Bo; Xu, Jing; Ning, Huanpo; Zhao, Lei; Xing, Huaizhong; Chang, Chien-Cheng; Qin, Yuming; Zhang, Lei

    The Cuprous oxide (CuO) thin film was prepared on texturized Si wafer by a simple sol-gel method to fabricate p-CuO/n-Si heterojunction photoelectric device. The novel sol-gel method is very cheap and convenient. The structural, optical and electrical properties of the CuO film were studied by X-ray diffraction (XRD), Scanning Electron Microscope (SEM), X-ray photoelectron spectroscopy (XPS), UV-Vis spectrophotometer and Hall effect measurement. A good nonlinear rectifying behavior is obtained for the p-CuO/n-Si heterojunction. Under reverse bias, good photoelectric behavior is obtained.

  4. Sol-gel bonding of silicon wafers

    International Nuclear Information System (INIS)

    Barbe, C.J.; Cassidy, D.J.; Triani, G.; Latella, B.A.; Mitchell, D.R.G.; Finnie, K.S.; Short, K.; Bartlett, J.R.; Woolfrey, J.L.; Collins, G.A.

    2005-01-01

    Sol-gel bonds have been produced between smooth, clean silicon substrates by spin-coating solutions containing partially hydrolysed silicon alkoxides. The two coated substrates were assembled and the resulting sandwich fired at temperatures ranging from 60 to 600 deg. C. The sol-gel coatings were characterised using attenuated total reflectance Fourier transform infrared spectroscopy, ellipsometry, and atomic force microscopy, while the corresponding bonded specimens were investigated using scanning electron microscopy and cross-sectional transmission electron microscopy. Mechanical properties were characterised using both microindentation and tensile testing. Bonding of silicon wafers has been successfully achieved at temperatures as low as 60 deg. C. At 300 deg. C, the interfacial fracture energy was 1.55 J/m 2 . At 600 deg. C, sol-gel bonding provided superior interfacial fracture energy over classical hydrophilic bonding (3.4 J/m 2 vs. 1.5 J/m 2 ). The increase in the interfacial fracture energy is related to the increase in film density due to the sintering of the sol-gel interface with increasing temperature. The superior interfacial fracture energy obtained by sol-gel bonding at low temperature is due to the formation of an interfacial layer, which chemically bonds the two sol-gel coatings on each wafer. Application of a tensile stress on the resulting bond leads to fracture of the samples at the silicon/sol-gel interface

  5. Cu-ZSM-5, Cu-ZSM-11, and Cu-ZSM-12 Catalysts for Direct NO Decomposition

    DEFF Research Database (Denmark)

    Kustova, Marina; Kustov, Arkadii; Christiansen, Sofie E.

    2006-01-01

    Cu-ZSM-5 has for many years been recognized as a unique catalyst for direct NO decomposition. Here, it is discovered that both Cu-ZSM-11 and Cu-ZSM-12 are about twice as active as Cu-ZSM-5. This difference is attributed to the active sites located almost exclusively in the straight zeolite pores...

  6. Electromigration in Cu(Al) and Cu(Mn) damascene lines

    Science.gov (United States)

    Hu, C.-K.; Ohm, J.; Gignac, L. M.; Breslin, C. M.; Mittal, S.; Bonilla, G.; Edelstein, D.; Rosenberg, R.; Choi, S.; An, J. J.; Simon, A. H.; Angyal, M. S.; Clevenger, L.; Maniscalco, J.; Nogami, T.; Penny, C.; Kim, B. Y.

    2012-05-01

    The effects of impurities, Mn or Al, on interface and grain boundary electromigration (EM) in Cu damascene lines were investigated. The addition of Mn or Al solute caused a reduction in diffusivity at the Cu/dielectric cap interface and the EM activation energies for both Cu-alloys were found to increase by about 0.2 eV as compared to pure Cu. Mn mitigated and Al enhanced Cu grain boundary diffusion; however, no significant mitigation in Cu grain boundary diffusion was observed in low Mn concentration samples. The activation energies for Cu grain boundary diffusion were found to be 0.74 ± 0.05 eV and 0.77 ± 0.05 eV for 1.5 μm wide polycrystalline lines with pure Cu and Cu (0.5 at. % Mn) seeds, respectively. The effective charge number in Cu grain boundaries Z*GB was estimated from drift velocity and was found to be about -0.4. A significant enhancement in EM lifetimes for Cu(Al) or low Mn concentration bamboo-polycrystalline and near-bamboo grain structures was observed but not for polycrystalline-only alloy lines. These results indicated that the existence of bamboo grains in bamboo-polycrystalline lines played a critical role in slowing down the EM-induced void growth rate. The bamboo grains act as Cu diffusion blocking boundaries for grain boundary mass flow, thus generating a mechanical stress-induced back flow counterbalancing the EM force, which is the equality known as the "Blech short length effect."

  7. A first-principles study of the structural, mechanical and electronic properties of precipitates of Al2Cu in Al-Cu alloys.

    Science.gov (United States)

    Ouyang, Y F; Chen, H M; Tao, X M; Gao, F; Peng, Q; Du, Y

    2018-01-03

    The properties of precipitates are important in understanding the strengthening mechanism via precipitation during heat treatment and the aging process in Al-Cu based alloys, where the formation of precipitates is sensitive to temperature and pressure. Here we report a first-principles investigation of the effect of temperature and pressure on the structural stability, elastic constants and formation free energy for precipitates of Al 2 Cu, as well as their mechanical properties. Based on the formation enthalpy of Guinier-Preston (GP(I)) zones, the size of the GP(I) zone is predicted to be about 1.4 nm in diameter, which is in good agreement with experimental observations. The formation enthalpies of the precipitates are all negative, suggesting that they are all thermodynamically stable. The present calculations reveal that entropy plays an important role in stabilizing θ-Al 2 Cu compared with θ C '-Al 2 Cu. The formation free energies of θ''-Al 3 Cu, θ C '-Al 2 Cu, θ D '-Al 5 Cu 3 and θ t '-Al 11 Cu 7 increase with temperature, while those of θ'-Al 2 Cu, θ O '-Al 2 Cu and θ-Al 2 Cu decrease. The same trend is observed with the effect of pressure. The calculated elastic constants for the considered precipitation phases indicate that they are all mechanically stable and anisotropic, except θ C '-Al 2 Cu. θ D '-Al 5 Cu 3 has the highest Vicker's hardness. The electronic structures are also calculated to gain insight into the bonding characteristics. The present results can help in understanding the formation of precipitates by different treatment processes.

  8. Bonding tungsten, W–Cu-alloy and copper with amorphous Fe–W alloy transition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Song, E-mail: wangsongrain@163.com [Laboratory of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, Beijing 100083 (China); Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China); Ling, Yunhan, E-mail: yhling@mail.tsinghua.edu.cn [Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China); Zhao, Pei [Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Zang, Nanzhi [Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China); Wang, Jianjun [Laboratory of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, Beijing 100083 (China); Guo, Shibin [Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Zhang, Jun [Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China); Xu, Guiying [Laboratory of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, Beijing 100083 (China)

    2013-05-15

    W/Cu graded materials are the leading candidate materials used as the plasma facing components in a fusion reactor. However, tungsten and copper can hardly be jointed together due to their great differences in physical properties such as coefficient of thermal expansion and melting point, and the lack of solid solubility between them. To overcome those difficulties, a new amorphous Fe–W alloy transitional coating and vacuum hot pressing (VHP) method were proposed and introduced in this paper. The morphology, composition and structure of the amorphous Fe–W alloy coating and the sintering interface of the specimens were analyzed by scanning electron microscopy (SEM), energy dispersive spectrometer (EDS) and X-ray diffraction (XRD). The thermal shock resistance of the bonded composite was also tested. The results demonstrated that amorphous structure underwent change from amorphous to nano grains during joining process, and the joined W/Cu composite can endued plasma thermal shock resistance with energy density more than 5.33 MW/m{sup 2}. It provides a new feasible technical to join refractory tungsten to immiscible copper with amorphous Fe–W alloy coating.

  9. Interface Microstructure and Deformation Behavior of an Al-Cu Dissimilar Metal Plate

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kwang Seok; Lee, Su Eun; Kwon, Yong-Nam [Korea Institute of Materials Science, Changwon (Korea, Republic of); Kim, Jung Su [Pohang University of Science and Technology, Pohang (Korea, Republic of); Kim, Min Jung; Bae, Dong Hyun [Korea Clad Tech. Co. Ltd., Daegu (Korea, Republic of)

    2013-07-15

    The aim of this article is to elucidate the influence of reduction ratio during roll bonding on the microstructural evolution, mechanical properties and room-temperature formability of Al-Cu 2-ply clad metal. The evolution of the interface microstructure was first characterized by a scanning electron microscope (SEM) and transmission electron microscope (TEM) attached with energy dispersive spectroscopy (EDS). The presence of an intermetallic compound as well as severe grain refinement was detected at the interface of the Al-Cu bimetal fabricated under the highest reduction ratio of 65% adopted in this study. Taking into account the difference of the microstructure with a reduction the ratio, mechanical properties and bonding strength were then evaluated by uniaxial tensile and peel tests. It was observed that the bonding strength, elongation and tensile strength for Al-Cu 2-ply sheets were incomparably reduced by decreasing the reduction ratio during the roll bonding process, which directly correlated with the microstructural evolution at the interface. Moreover, the higher reduction ratio during the roll bonding, the more room temperature formability could be achieved for Al-Cu 2-ply sheet by applying both three-point bending and Erichsen tests.

  10. Spectroscopic Studies of a Three-dimensional, Five-coordinated Copper(Ⅱ) Complex via Hydrogen Bonds: [Cu(PDA)(H2O)2](H2PDA=Pyridine-2,6-dicarboxylic Acid)

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    A new copper(Ⅱ) complex [Cu(PDA)(H2O)2] was synthesized and its structure was determined. Cu(Ⅱ) is five-coordinated in a tetragonal pyramid geometry. The two coordinating water molecules are different and the two Cu-O bond lengths differ by nearly 0.02 nm. The whole crystal is linked to form a three-dimensional network by means of hydrogen bonds. The X-band ESR spectrum shows three different g tensors with a well-resolved hyperfine structure in the gz signal, giving the ESR parameters gx=2.05, gy=2.065 and gz=2.29. The covalency of the coordinate bonds and the deviation from tetragonal pyramid geometry for the complex are discussed based on the ESR spectra.

  11. Giant secondary grain growth in Cu films on sapphire

    Directory of Open Access Journals (Sweden)

    David L. Miller

    2013-08-01

    Full Text Available Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach that is both simpler to implement and produces superior results: sputter deposition at modest temperatures followed by annealing to induce secondary grain growth. We show that polycrystalline as-deposited Cu on α-Al2O3(0001 can be transformed into Cu(111 with centimeter-sized grains. Employing optical microscopy, x-ray diffraction, and electron backscatter diffraction to characterize the films before and after annealing, we find a particular as-deposited grain structure that promotes the growth of giant grains upon annealing. To demonstrate one potential application of such films, we grow graphene by chemical vapor deposition on wafers of annealed Cu and obtain epitaxial graphene grains of 0.2 mm diameter.

  12. Electronic structure of TlBa2CaCu2O7-δ

    Science.gov (United States)

    Vasquez, R. P.; Novikov, D. L.; Freeman, A. J.; Siegal, M. P.

    1997-06-01

    The core levels of TlBa2CaCu2O7-δ (Tl-1212) epitaxial films have been measured with x-ray photoelectron spectroscopy (XPS). The valence electronic structure has been determined using the full-potential linear muffin-tin-orbital band-structure method and measured with XPS. The calculations show that a van Hove singularity (VHS) lies above the Fermi level (EF) for the stoichiometric compound (δ=0), while for 50% oxygen vacancies in the Tl-O layer (δ=0.5) EF is in close proximity to the VHS. Samples annealed in nitrogen (to reduce the hole overdoping by the removal of oxygen) exhibit higher core-level binding energies and a higher Tc, consistent with a shift of EF closer to the VHS. Comparisons are made to the core levels and valence bands of Tl2Ba2CaCu2O8+δ (Tl-2212) and HgBa2CaCu2O6+δ (Hg-1212). The similarity of the Cu 2p3/2 spectra for Tl-1212 and Tl-2212 indicates that the number of Tl-O layers has little effect on the Cu-O bonding. However, the Tl-1212 and Hg-1212 Cu 2p3/2 signals exhibit differences which suggest that the replacement of Tl3+ with Hg2+ results in a decrease in the O 2p-->Cu 3d charge-transfer energy and differences in the probabilities of planar vs apical oxygen charge transfer and/or Zhang-Rice singlet-state formation. Differences between the Tl-1212 and the Tl-2212 and Hg-1212 measured valence bands are consistent with the calculated Cu 3d and (Tl,Hg) 6s/5d partial densities of states.

  13. Electronic structure of TlBa2CaCu2O7-δ

    International Nuclear Information System (INIS)

    Vasquez, R.P.; Novikov, D.L.; Freeman, A.J.; Siegal, M.P.

    1997-01-01

    The core levels of TlBa 2 CaCu 2 O 7-δ (Tl-1212) epitaxial films have been measured with x-ray photoelectron spectroscopy (XPS). The valence electronic structure has been determined using the full-potential linear muffin-tin-orbital band-structure method and measured with XPS. The calculations show that a van Hove singularity (VHS) lies above the Fermi level (E F ) for the stoichiometric compound (δ=0), while for 50% oxygen vacancies in the Tl-O layer (δ=0.5) E F is in close proximity to the VHS. Samples annealed in nitrogen (to reduce the hole overdoping by the removal of oxygen) exhibit higher core-level binding energies and a higher T c , consistent with a shift of E F closer to the VHS. Comparisons are made to the core levels and valence bands of Tl 2 Ba 2 CaCu 2 O 8+δ (Tl-2212) and HgBa 2 CaCu 2 O 6+δ (Hg-1212). The similarity of the Cu 2p 3/2 spectra for Tl-1212 and Tl-2212 indicates that the number of Tl-O layers has little effect on the Cu-O bonding. However, the Tl-1212 and Hg-1212 Cu 2p 3/2 signals exhibit differences which suggest that the replacement of Tl 3+ with Hg 2+ results in a decrease in the O 2p→Cu 3d charge-transfer energy and differences in the probabilities of planar vs apical oxygen charge transfer and/or Zhang-Rice singlet-state formation. Differences between the Tl-1212 and the Tl-2212 and Hg-1212 measured valence bands are consistent with the calculated Cu 3d and (Tl,Hg) 6s/5d partial densities of states. copyright 1997 The American Physical Society

  14. Electronic Structure of TlBa2CaCu2O(7-Delta)

    Science.gov (United States)

    Vasquez, R. P.; Novikov, D. L.; Freeman, A. J.; Siegal, M. P.

    1997-01-01

    The core levels of TlBa2CaCu2O(7-delta) (Tl-1212) epitaxial films have been measured with X-ray photoelectron spectroscopy (XPS). The valence electronic structure has been determined using the full-potential linear muffin-tin-orbital band-structure method and measured with XPS. The calculations show that a van Hove singularity (VHS) lies above the Fermi level (E(sub F)) for the stoichiometric compound (delta = 0.5), while for 50% oxygen vacancies in the Tl-O layer (delta = 0.5) E(sub F) is in close proximity to the VHS. Samples annealed in nitrogen (to reduce the hole overdoping by the removal of oxygen) exhibit higher core-level binding energies and a higher T(sub c), consistent with a shift of E(sub F) closer to the VHS. Comparisons are made to the core levels and valence bands of Tl2Ba2CaCu2O(8 + delta)(Tl-2212) and HgBa2CaCu2O)6 + delta) (Hg- 1212). The similarity of the Cu 2p(sub 3/2) spectra for Tl-1212 and Tl-2212 indicates that the number of Tl-O layers has little effect on the Cu-O bonding. However, the Tl-1212 and Hg-1212 Cu 2p(sub 3/2) signals exhibit differences which suggest that the replacement of T(sup 3+) with Hg(sup 2+) results in a decrease in the O 2p right arrow Cu 3d charge-transfer energy and differences in the probabilities of planar vs apical oxygen charge transfer and/or Zhang-Rice singlet-state formation. Differences between the Tl-1212 and the Tl-2212 and Hg-1212 measured valence bands are consistent with the calculated Cu 3d and (Tl,Hg) 6s/5d partial densities of states.

  15. Carbon Supported Oxide-Rich Pd-Cu Bimetallic Electrocatalysts for Ethanol Electrooxidation in Alkaline Media Enhanced by Cu/CuOx

    Directory of Open Access Journals (Sweden)

    Zengfeng Guo

    2016-04-01

    Full Text Available Different proportions of oxide-rich PdCu/C nanoparticle catalysts were prepared by the NaBH4 reduction method, and their compositions were tuned by the molar ratios of the metal precursors. Among them, oxide-rich Pd0.9Cu0.1/C (Pd:Cu = 9:1, metal atomic ratio exhibits the highest electrocatalytic activity for ethanol oxidation reaction (EOR in alkaline media. X-ray photoelectron spectroscopy (XPS and high resolution transmission electron microscopy (HRTEM confirmed the existence of both Cu and CuOx in the as-prepared Pd0.9Cu0.1/C. About 74% of the Cu atoms are in their oxide form (CuO or Cu2O. Besides the synergistic effect of Cu, CuOx existed in the Pd-Cu bimetallic nanoparticles works as a promoter for the EOR. The decreased Pd 3d electron density disclosed by XPS is ascribed to the formation of CuOx and the spill-over of oxygen-containing species from CuOx to Pd. The low Pd 3d electron density will decrease the adsorption of CH3COads intermediates. As a result, the electrocatalytic activity is enhanced. The onset potential of oxide-rich Pd0.9Cu0.1/C is negative shifted 150 mV compared to Pd/C. The oxide-rich Pd0.9Cu0.1/C also exhibited high stability, which indicated that it is a candidate for the anode of direct ethanol fuel cells (DEFCs.

  16. Assessment of copper nanoparticles (Cu-NPs) and copper (II) oxide (CuO) induced hemato- and hepatotoxicity in Cyprinus carpio

    Science.gov (United States)

    Noureen, Aasma; Jabeen, Farhat; Tabish, Tanveer A.; Yaqub, Sajid; Ali, Muhammad; Shakoor Chaudhry, Abdul

    2018-04-01

    Recently, Cu-based nanoparticles have drawn considerable attention for their various fascinating roles in multiple biological systems. It is recognized that their frequent use can create compatibility challenges for the recipient systems. Nevertheless, it is unclear how various biological interactions affect the compatibility of Cu oxide II (CuO) and Cu oxide nanoparticles (Cu-NPs) for different organisms. Consequently, it has been difficult to perform structured risk assessments for their use in biological systems. Therefore, this study compared the effects of different doses of waterborne Cu-NPs and CuO on the blood and liver of selected groups of Cyprinus (C) carpio. These fish while housed in suitable water tanks were exposed to one of the following treatments for 14 d: control (no added Cu) or 0.5 or 1 or 1.5 mg Cu as Cu-NPs or CuO l-1 of water. We found significant changes in all assessed blood parameters of fish in response to increasing doses from 0 to 1.5 mg of Cu-NPs or CuO. Similarly, increased levels of lipid peroxide and reduced glutathione (GSH) were also observed in the livers of C. carpio in Cu-NPs or CuO treated groups. Enhanced levels of lipid peroxidation and GSH were also recorded in the Cu-NP treated groups compared with the CuO treated groups in a dose dependent manner. The lowest catalase activity was observed in the liver of C. carpio treated with the higer dose of Cu-NPs. Cu-NP or CuO exposure induced significant histological alterations in the liver of C. carpio including focal necrosis, cloudy swelling of hepatocytes, degenerative hepatocytes, vacuolization, pyknotic nuclei, damaged central vein, nuclear hypertrophy, dilated sinusoid, vacuolated degeneration, congestion, and complete degeneration in a dose dependent manner. Substantial alterations in blood and liver specimens were observed in the Cu-NP treated fish when compared with the CuO treated fish. It appeared that the Cu-NPs were more toxic than the CuO as shown by the hemato- and

  17. How easy is CO2 fixation by M-C bond containing complexes (M = Cu, Ni, Co, Rh, Ir)?

    KAUST Repository

    Nolan, Steve; Cavallo, Luigi; Poater, Albert; Vummaleti, Sai V. C.; Talarico, Giovanni

    2015-01-01

    A comparison between different M–C bonds (M = Cu(I), Ni(II), Co(I), Rh(I) and Ir(I)) has been reported by using density functional theory (DFT) calculations to explore the role of the metal in the fixation or incorporation of CO2 into such complexes. The systems investigated are various metal based congeners of the Ir-complex 8 [(cod)(IiPr)Ir-CCPh], with a ligand scaffold based on cod and IiPr ligands (cod = 1,5-cyclooctadiene; IiPr = 1,3-bis(isopropyl)imidazol-2-ylidene). The results of this study show that the calculated CO2 insertion barriers follow the trend: Cu(I) (20.8 kcal mol−1) < Rh(I) (30.0 kcal mol−1) < Co(I) (31.3 kcal mol−1) < Ir(I) (37.5 kcal mol−1) < Ni(II) (45.4 kcal mol−1), indicating that the Cu(I) based analogue is the best CO2 fixer, while Ni(II) is the worst in the studied series.

  18. How easy is CO2 fixation by M-C bond containing complexes (M = Cu, Ni, Co, Rh, Ir)?

    KAUST Repository

    Nolan, Steve

    2015-11-27

    A comparison between different M–C bonds (M = Cu(I), Ni(II), Co(I), Rh(I) and Ir(I)) has been reported by using density functional theory (DFT) calculations to explore the role of the metal in the fixation or incorporation of CO2 into such complexes. The systems investigated are various metal based congeners of the Ir-complex 8 [(cod)(IiPr)Ir-CCPh], with a ligand scaffold based on cod and IiPr ligands (cod = 1,5-cyclooctadiene; IiPr = 1,3-bis(isopropyl)imidazol-2-ylidene). The results of this study show that the calculated CO2 insertion barriers follow the trend: Cu(I) (20.8 kcal mol−1) < Rh(I) (30.0 kcal mol−1) < Co(I) (31.3 kcal mol−1) < Ir(I) (37.5 kcal mol−1) < Ni(II) (45.4 kcal mol−1), indicating that the Cu(I) based analogue is the best CO2 fixer, while Ni(II) is the worst in the studied series.

  19. Properties of the CuGaSe2 and CuInSe2 (001) surface

    International Nuclear Information System (INIS)

    Deniozou, T.

    2005-01-01

    The main task of this work was to investigate the (001) CuGaSe 2 and CuInSe 2 surface in dependence of preparation and stoichiometry. The knowledge of the atomic structure as well as other surface properties is important in respect to optimization of novel thin film solar cells. For the characterization of the layers mainly Auger electron Spectroscopy, low-energy electron diffraction and photoelectron spectroscopy were implemented. The development of an appropriate procedure with Ar + sputtering and annealing combined with decapping enabled the preparation of clean and well-ordered surfaces. Different surface structures were observed in dependence of the layer preparation and composition. A (4 x 1) reconstruction was observed for the first time on CuGaSe 2 layers grown with a moderate Cu-excess after preparation by sputtering and annealing. Similarly a (4 x 2) reconstruction was detected on CuInSe2 surfaces of Cu-poor layers. A reconstruction could be also observed on Cu-poorer layers, however the facets/steps could not be completely removed. Cu-richer layers were facet-free, however the observed reconstruction was also weaker. Thus it was shown that in contrary to recent expectations, according to which only the (112) surface is stable, also the (001) can be stable under particular conditions. The appearance of facets or steps is correlated with the presence of CuIn 3 Se 5 or CuGa 3 Se 5 phases. This information is furthermore important for the understanding of grain boundaries in polycrystalline CuGaSe 2 and CuInSe 2 . Binding energy shifts were observed for the first time on all Se3d, In4d, Ga3d, Cu3d core levels of the reconstructed surfaces. By comparison with results from the literature from the similar ZnSe (100) surface a modell for the (4 x 2) reconstruction was proposed. The surface components in the Se3d, In4d and Cu3d emission were attributed to Se dimers or In and Cu adatoms respectively. The x 1 periodicity of the (4 x 1) reconstruction of CuGaSe 2 is

  20. Vibrational spectra of Cs2Cu(SO4)2·6H2O and Cs2Cu(SeO4)2·nH2O (n = 4, 6) with a crystal structure determination of the Tutton salt Cs2Cu(SeO4)2·6H2O

    Science.gov (United States)

    Wildner, M.; Marinova, D.; Stoilova, D.

    2016-02-01

    The solubility in the three-component systems Cs2SO4-CuSO4-H2O and Cs2SeO4-CuSeO4-H2O have been studied at 25 °C. The experimental results show that double salts, Cs2Cu(SO4)2·6H2O and Cs2Cu(SeO4)2·4H2O, crystallize from the ternary solutions within large concentration ranges. Crystals of Cs2Cu(SeO4)2·6H2O were synthesized at somewhat lower temperatures (7-8 °C). The thermal dehydration of the title compounds was studied by TG, DTA and DSC methods and the respective dehydration schemes are proposed. The calculated enthalpies of dehydration (ΔHdeh) have values of: 434.2 kJ mol-1 (Cs2Cu(SeO4)2·6H2O), 280.9 kJ mol-1 (Cs2Cu(SeO4)2·4H2O), and 420.2 kJ mol-1 (the phase transition of Cs2Cu(SO4)2·6H2O into Cs2Cu(SO4)2·H2O). The crystal structure of Cs2Cu(SeO4)2ṡ6H2O was determined from single crystal X-ray diffraction data. It belongs to the group of Tutton salts, crystallizing isotypic to the respective sulfate in a monoclinic structure which is characterized by isolated Cu(H2O)6 octahedra and SeO4 tetrahedra, interlinked by hydrogen bonds and [9]-coordinated Cs+ cations. Infrared spectra of the cesium copper compounds are presented and discussed with respect to both the normal modes of the tetrahedral ions and the water molecules. The analysis of the infrared spectra of the double compounds reveals that the distortion of the selenate tetrahedra in Cs2Cu(SeO4)2·4H2O is stronger than those in Cs2Cu(SeO4)2·6H2O in agreement with the structural data. Matrix-infrared spectroscopy was applied to confirm this claim - Δν3 for SO4 2 - ions matrix-isolated in Cs2Cu(SeO4)2·6H2O has a value of 35 cm-1 and that of the same ions included in Cs2Cu(SeO4)2·4H2O - 84 cm-1. This spectroscopic finding is due to the formation of strong covalent bands Cu-OSO3 on one hand, and on the other to the stronger deformation of the host SeO4 2 - tetrahedra in Cs2Cu(SeO4)2·4H2O as compared to those in Cs2Cu(SeO4)2·6H2O. The strength of the hydrogen bonds as deduced from the

  1. Wafer-level integration of NiTi shape memory alloy on silicon using Au–Si eutectic bonding

    International Nuclear Information System (INIS)

    Gradin, Henrik; Bushra, Sobia; Braun, Stefan; Stemme, Göran; Van der Wijngaart, Wouter

    2013-01-01

    This paper reports on the wafer level integration of NiTi shape memory alloy (SMA) sheets with silicon substrates through Au–Si eutectic bonding. Different bond parameters, such as Au layer thicknesses and substrate surface treatments were evaluated. The amount of gold in the bond interface is the most important parameter to achieve a high bond yield; the amount can be determined by the barrier layers between the Au and Si or by the amount of Au deposition. Deposition of a gold layer of more than 1 μm thickness before bonding gives the most promising results. Through patterning of the SMA sheet and by limiting bonding to small areas, stresses created by the thermal mismatch between Si and NiTi are reduced. With a gold layer of 1 μm thickness and bond areas between 200 × 200 and 800 × 800 μm 2 a high bond strength and a yield above 90% is demonstrated. (paper)

  2. Copper(II hydrogenphosphate, CuHPO4

    Directory of Open Access Journals (Sweden)

    Dörte Stachel

    2009-12-01

    Full Text Available The title compound, CuHPO4, has been synthesized from a mixture of phosphoric acid and copper oxide. It has the same composition as MHPO4 (M = Ca, Ba, Pb, Sr or Sn, but adopts a rhombohedral structure with all atoms on general positions. The structure features distorted PO4 tetrahedra linked by copper, forming 12-membered rings. The CuII atom is coordinated by five O atoms in a distorted square-pyramidal manner. O—H...O hydrogen bonding leads to an additional stabilization of the structure.

  3. Punicalagin Green Functionalized Cu/Cu2O/ZnO/CuO Nanocomposite for Potential Electrochemical Transducer and Catalyst

    Science.gov (United States)

    Fuku, X.; Kaviyarasu, K.; Matinise, N.; Maaza, M.

    2016-09-01

    A novel ternary Punica granatum L-Cu/Cu2O/CuO/ZnO nanocomposite was successfully synthesised via green route. In this work, we demonstrate that the green synthesis of metal oxides is more viable and facile compare to other methods, i.e., physical and chemical routes while presenting a potential electrode for energy applications. The prepared nanocomposite was characterised by both microscopic and spectroscopic techniques. High-resolution scanning electron microscopy (HRSEM) and X-ray diffraction (XRD) techniques revealed different transitional phases with an average nanocrystallite size of 29-20 mm. It was observed that the nanocomposites changed from amorphous-slightly crystalline Cu/Cu2O to polycrystalline Cu/Cu2O/CuO/ZnO at different calcination temperatures (room temperature-RT- 600 °C). The Cu/Cu2O/ZnO/CuO metal oxides proved to be highly crystalline and showed irregularly distributed particles with different sizes. Meanwhile, Fourier transform infrared (FTIR) spectroscopy confirmed the purity while together with ultraviolet-visible (UV-Vis) spectroscopy proved the proposed mechanism of the synthesised nanocomposite. UV-Vis showed improved catalytic activity of the prepared metal oxides, evident by narrow band gap energy. The redox and electrochemical properties of the prepared nanocomposite were achieved by cyclic voltammetry (CV), electrochemical impedance (EIS) and galvanostatic charge-discharge (GCD). The maximum specific capacitance ( C s) was calculated to be 241 F g-1 at 50 mV s-1 for Cu/Cu2O/CuO/ZnO nanoplatelets structured electrode. Moreover, all the CuO nanostructures reveal better power performance, excellent rate as well as long term cycling stability. Such a study will encourages a new design for a wide spectrum of materials for smart electronic device applications.

  4. Cu-62, Cu-64 and Cu-66 production with 4.2 MeV deuterons; Produccion de {sup 62} Cu y {sup 64} Cu con deuterones de 4,2 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Avila, Mario; Morales, J R; Riquelme, H O [Chile Univ., Santiago (Chile). Facultad de Ciencias. Dept. de Fisica

    1997-12-31

    Full text: The natural copper irradiation with deuterons produces the Cu-62, Cu-64 and Cu-66 radionuclides. Of two radioisotopes, those with deficiencies in neutrons, are applied in nuclear medicine diagnostic processes, mainly for the nuclear characteristic of the decay modes. The positron emitters, of short life mean Cu-62 (9.1 min, {beta}{sup +}) and Cu(12.7 h), are radionuclides applied in radio pharmacological preparation for brain, core, blood flux studies. The radiochemical process consists in the de solution of the irradiated metallic copper target, in acid medium. The result solution, can be neutralized with a base or a buffer at wished pH. Using a deuteron beam of 4,2 {+-} 0,1 MeV energy has been obtained total yields of 1,103 {+-} 0,011 {mu}Cl/{mu}Ah medium for 62 Cu and of 0,148 {+-} 0,015 {mu}Cl/{mu}Ah for 64 Cu.

  5. Solid-liquid interdiffusion (SLID) bonding in the Au-In system: experimental study and 1D modelling

    Science.gov (United States)

    Deillon, Léa; Hessler-Wyser, Aïcha; Hessler, Thierry; Rappaz, Michel

    2015-12-01

    Au-In bonds with a nominal composition of about 60 at.% In were fabricated for use in wafer-level packaging of MEMS. The microstructure of the bonds was studied by scanning electron microscopy. The bond hermeticity was then assessed using oxidation of Cu thin discs predeposited within the sealed packages. The three intermetallic compounds AuIn2, AuIn and Au7In3 were observed. Their thickness evolution during bonding and after subsequent heat treatment was successfully modelled using a finite difference model of diffusion, thermodynamic data and diffusion coefficients calibrated from isothermal diffusion couples. 17% of the packages were hermetic and, although the origin of the leaks could not be clearly identified, it appeared that hermeticity was correlated with the unevenness of the metallisation and/or wafer and the fact that the bonds shrink due to density differences as the relative fractions of the various phases gradually evolve.

  6. Solid-liquid interdiffusion (SLID) bonding in the Au–In system: experimental study and 1D modelling

    International Nuclear Information System (INIS)

    Deillon, Léa; Hessler-Wyser, Aïcha; Hessler, Thierry; Rappaz, Michel

    2015-01-01

    Au–In bonds with a nominal composition of about 60 at.% In were fabricated for use in wafer-level packaging of MEMS. The microstructure of the bonds was studied by scanning electron microscopy. The bond hermeticity was then assessed using oxidation of Cu thin discs predeposited within the sealed packages. The three intermetallic compounds AuIn 2 , AuIn and Au 7 In 3 were observed. Their thickness evolution during bonding and after subsequent heat treatment was successfully modelled using a finite difference model of diffusion, thermodynamic data and diffusion coefficients calibrated from isothermal diffusion couples. 17% of the packages were hermetic and, although the origin of the leaks could not be clearly identified, it appeared that hermeticity was correlated with the unevenness of the metallisation and/or wafer and the fact that the bonds shrink due to density differences as the relative fractions of the various phases gradually evolve. (paper)

  7. Cu-catalyzed esterification reaction via aerobic oxygenation and C-C bond cleavage: an approach to α-ketoesters.

    Science.gov (United States)

    Zhang, Chun; Feng, Peng; Jiao, Ning

    2013-10-09

    The Cu-catalyzed novel aerobic oxidative esterification reaction of 1,3-diones for the synthesis of α-ketoesters has been developed. This method combines C-C σ-bond cleavage, dioxygen activation and oxidative C-H bond functionalization, as well as provides a practical, neutral, and mild synthetic approach to α-ketoesters which are important units in many biologically active compounds and useful precursors in a variety of functional group transformations. A plausible radical process is proposed on the basis of mechanistic studies.

  8. The Crystal Structure of Cu4Bi4Se9

    DEFF Research Database (Denmark)

    Makovicky, E.; Søtofte, Inger; Karup-Møller, S.

    2002-01-01

    contains three square pyramidal Bi sites, an octahedrally coordinated Bi site as well as two tetrahedrally and two irregularly coordinated Cu sites. The structure is an intergrowth of PbS-like slabs with irregularly configured slabs of Bi pyramids and Cu tetrahedra. It contains covalently bonded Se-2...

  9. Near-Infrared Emitting CuInSe2/CuInS2 Dot Core/Rod Shell Heteronanorods by Sequential Cation Exchange

    Science.gov (United States)

    2015-01-01

    The direct synthesis of heteronanocrystals (HNCs) combining different ternary semiconductors is challenging and has not yet been successful. Here, we report a sequential topotactic cation exchange (CE) pathway that yields CuInSe2/CuInS2 dot core/rod shell nanorods with near-infrared luminescence. In our approach, the Cu+ extraction rate is coupled to the In3+ incorporation rate by the use of a stoichiometric trioctylphosphine-InCl3 complex, which fulfills the roles of both In-source and Cu-extracting agent. In this way, Cu+ ions can be extracted by trioctylphosphine ligands only when the In–P bond is broken. This results in readily available In3+ ions at the same surface site from which the Cu+ is extracted, making the process a direct place exchange reaction and shifting the overall energy balance in favor of the CE. Consequently, controlled cation exchange can occur even in large and anisotropic heterostructured nanocrystals with preservation of the size, shape, and heterostructuring of the template NCs into the product NCs. The cation exchange is self-limited, stopping when the ternary core/shell CuInSe2/CuInS2 composition is reached. The method is very versatile, successfully yielding a variety of luminescent CuInX2 (X = S, Se, and Te) quantum dots, nanorods, and HNCs, by using Cd-chalcogenide NCs and HNCs as templates. The approach reported here thus opens up routes toward materials with unprecedented properties, which would otherwise remain inaccessible. PMID:26449673

  10. Preparation of conductive Cu patterns by directly writing using nano-Cu ink

    Energy Technology Data Exchange (ETDEWEB)

    Li, Wei [School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Li, Wenjiang; Wei, Jun [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Tan, Junjun [School of Chemical and Materials and Engineering, Hubei University of Technology, Hubei 435003 (China); Chen, Minfang, E-mail: mfchentj@126.com [School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China)

    2014-07-01

    Conductive and air-stable Cu patterns were directly made on ordinary photo paper using a roller pen filled with nano-Cu ink, which was mainly composed of metallic Cu nanoparticles (NPs) capped with poly(N-vinylpyrrolidone) (PVP). The nano-Cu NPs were obtained via the reduction of Cu{sup 2+} ions by using an excess of hydrazine and PVP. The low sintering temperature (160 °C) in Ar atmosphere played an important role for the preparation of air-stable Cu patterns. The conductivity of a radio-frequency identification antenna made from nano-Cu ink was tested by a lamp, and its resistivity achieved 13.4 ± 0.4 μΩ cm. The Cu NPs were confirmed by means of X-ray powder diffraction and X-ray photoelectron spectra, and the Cu patterns were characterized by scanning electron microscopy and energy dispersive X-ray spectrometry. A mechanism for the high conductivity of the Cu pattern made from Cu NPs is proposed. - Highlights: • The synthesis of pure Cu is related to the reducing agent and capping agent. • The sintering under Ar atmosphere prevents Cu pattern's rapid oxidation. • The formation of the bulk Cu decreases the resistivity of the Cu pattern.

  11. Adsorption and dehydrogenation of tetrahydroxybenzene on Cu(111)

    DEFF Research Database (Denmark)

    Bebensee, Fabian; Svane, K.; Bombis, Christian

    2013-01-01

    Adsorption of tetrahydroxybenzene (THB) on Cu(111) and Au(111) surfaces is studied using a combination of STM, XPS, and DFT. THB is deposited intact, but on Cu(111) it undergoes gradual dehydrogenation of the hydroxyl groups as a function of substrate temperature, yielding a pure dihydroxy......-benzoquinone phase at 370 K. Subtle changes to the adsorption structure upon dehydrogenation are explained from differences in molecule–surface bonding....

  12. Cu/Cu{sub 2}O/CuO loaded on the carbon layer derived from novel precursors with amazing catalytic performance

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xiaoli, E-mail: zhaoxiaoli_zxl@126.com [State Key Laboratory of Environmental Criteria and Risk Assessment, Chinese Research Academy of Environmental Sciences, Beijing 100012 (China); Tan, Yixin [State Key Laboratory of Environmental Criteria and Risk Assessment, Chinese Research Academy of Environmental Sciences, Beijing 100012 (China); State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); Wu, Fengchang, E-mail: wu_fengchang@126.com [State Key Laboratory of Environmental Criteria and Risk Assessment, Chinese Research Academy of Environmental Sciences, Beijing 100012 (China); Niu, Hongyun [State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); Tang, Zhi [State Key Laboratory of Environmental Criteria and Risk Assessment, Chinese Research Academy of Environmental Sciences, Beijing 100012 (China); Cai, Yaqi [State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); Giesy, John P. [State Key Laboratory of Environmental Criteria and Risk Assessment, Chinese Research Academy of Environmental Sciences, Beijing 100012 (China); Department of Veterinary Biomedical Sciences and Toxicology Centre, University of Saskatchewan, Saskatoon, Saskatchewan (Canada)

    2016-11-15

    A simple, novel method for synthesis of Cu/Cu{sub 2}O/CuO on surfaces of carbon (Cu/Cu{sub 2}O/CuO@C) as a non-noble-metal catalyst for reduction of organic compounds is presented. Compared with noble metals, Cu/Cu{sub 2}O/CuO@C particles are more efficient and less expensive. Characterization of the Cu/Cu{sub 2}O/CuO@C composites by high-resolution transmission electron microscope (HRTEM), x-ray diffraction (XRD), infrared spectroscopy and Raman analysis, revealed that it was composed of graphitized carbon with numerous nanoparticles (100 nm in diameter) of Cu/CuO/Cu{sub 2}O that were uniformly distributed on internal and external surfaces of the carbon support. Gallic acid (GA) has been used as both organic ligand and carbon precursor with metal organic frameworks (MOFs) as the sacrificial template and metal oxide precursor in this green synthesis. The material combined the advantages of MOFs and Cu-containing materials, the porous structure provided a large contact area and channels for the pollutions, which results in more rapid catalytic degradation of pollutants and leads to greater efficiency of catalysis. The material gave excellent catalytic performance for organic dyes and phenols. In this study, Cu/Cu{sub 2}O/CuO@C was used as catalytic to reduce 4-NP, which has been usually adopted as a model reaction to check the catalytic ability. Catalytic experiment results show that 4-NP was degraded approximately 3 min by use of 0.04 mg of catalyst and the conversion of pollutants can reach more than 99%. The catalyst exhibited little change in efficacy after being utilized five times. Rates of degradation of dyes, such as Methylene blue (MB) and Rhodamine B (RhB) and phenolic compounds such as O-Nitrophenol (O-NP) and 2-Nitroaniline (2-NA) were all similar. - Highlights: • We present an effective catalyst for reductive degradation of organic dyes and phenols in water. • Compared with noble metals, Cu/Cu{sub 2}O/CuO@C particles are more efficient and less

  13. /Cu-Al System

    Science.gov (United States)

    Kish, Orel; Froumin, Natalya; Aizenshtein, Michael; Frage, Nachum

    2014-05-01

    Wettability and interfacial interaction of the Ta2O5/Cu-Al system were studied. Pure Cu does not wet the Ta2O5 substrate, and improved spreading is achieved when relatively a high fraction of the active element (~40 at.% Al) was added. The Al2O3 and AlTaO4 phases were observed at the Ta2O5/Cu-Al interface. A thermodynamic evaluation allowed us to suggest that the lack of wetting bellow 40 at.% Al is due to the presence of a native oxide, which covers the drop. The conditions of the native oxide decomposition and the formation of the volatile Al2O suboxide strongly depend on the vacuum level during sessile drop experiments and the composition of the Cu-Al alloy. In our case, Al contents greater than 40% provides thermodynamic conditions for the formation of Al2O (as a result of Al reaction with Al2O3) and the drop spreading. It was suggested that the final contact angle in the Ta2O5/Cu-Al system (50°) is determined by Ta adsorption on the newly formed alumina interlayer.

  14. Oxidation of Cu(II) aminopolycarboxylates by carbonate radical. A flash photolysis study

    International Nuclear Information System (INIS)

    Mandal, P.C.; Bardhan, D.K.

    1999-01-01

    Reactions of carbonate radical (CO 3 -. ) generated by photolysis or by radiolysis of a carbonate solution, with Cu(II) complexes of aminopolycarboxylic acids viz., Cu(II)ethylenediamine tetraacetate [Cu II EDTA] 2- and Cu(II)-iminodiacetate [Cu II IDA] were studied at pH 10.5 and ionic strength 0.2 mol x dm -3 . Time-resolved spectroscopy and kinetics for the transients were studied using flash photolysis and stable products arising from the ligand degradation of the complex were ascertained by steady-state radiolysis experiments. From the kinetic data it is observed that CO 3 -. radical reacts initially with Cu II -complex to form a transient intermediate having maximum absorption at 335 nm and 430 nm. From the subsequent reactions of this intermediate it was assigned to be Cu III .species. This Cu(III) species undergoes intermolecular electron transfer with the Cu II -complex to give a radical intermediate which again slowly reacts with Cu II -complex to give a long lived species containing Cu-C bond. This long lived species, however, slowly decomposed to give glyoxalic reaction between Cu III -complex and a suitable donor, the one electron reduction potential for [Cu III EDTA] 1- /[Cu II EDTA] 2- and [Cu III IDA] +1 /Cu II IDA was determined. (author)

  15. CFC/Cu bond damage in actively cooled plasma facing components

    International Nuclear Information System (INIS)

    Schlosser, J; Martin, E; Henninger, C; Boscary, J; Camus, G; Escourbiac, F; Leguillon, D; Missirlian, M; Mitteau, R

    2007-01-01

    Carbon fibre composite (CFC) armours have been successfully used for actively cooled plasma facing components (PFCs) of the Tore Supra (TS) tokamak. They were also selected for the divertor of the stellarator W7-X under construction and for the vertical target of the ITER divertor. In TS and W7-X a flat tile design for heat fluxes of 10 MW m -2 has been chosen. To predict the lifetime of such PFCs, it is necessary to analyse the damage mechanisms and to model the damage propagation when the component is exposed to thermal cycling loads. Work has been performed to identify a constitutive law for the CFC and parameters to model crack propagation from the edge singularity. The aim is to predict damage rates and to propose geometric or material improvements to increase the strength and the lifetime of the interfacial bond. For ITER a tube-in-tile concept (monoblock), designed to sustain heat fluxes up to 20 MW m -2 , has been developed. The optimization of the CFC/Cu bond, proposed for flat tiles, could be adopted for the monoblock concept

  16. Carbon disulfide (CS{sub 2}) adsorption and dissociation on the Cu(100) surface: A quantum chemical study

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wenju, E-mail: wangwenju1982@163.com; Fan, Lili; Wang, Guoping, E-mail: wgp1976@163.com

    2017-08-31

    Highlights: • CS{sub 2}, CS, C and S are strongly chemadsorbed on the Cu(100) surface. • C/S/S, S/CS and CS{sub 2} accord to a decreased adsorption strength on the Cu(100). • The asymmetric model CS{sub 2}(II) is easier to dissociate on the Cu(100) surface. - Abstract: Density functional theory (DFT) is used to examine the adsorption and dissociation of CS{sub 2} on the Cu(100) surface. This study evaluates the adsorption energies and geometries of the species (CS{sub 2}, CS, C and S) adsorption on the Cu(100) surface, as well as that coadsorption of CS and a S atom, and that coadsorption of C atom and two S atoms. The results indicate that the species (CS{sub 2}, CS, C and S) are strongly chemadsorbed on the Cu(100) surface through the C−Cu and/or S−Cu bond with an increased adsorption energy (C/S/S > S/CS > CS{sub 2}). Two pathways for CS{sub 2} dissociation on the Cu(100) surface are constructed, and the energy barrier and reaction energy of each step are calculated. It shows that the dissociated energy barrier of the second C−S bond is 0.25 eV higher than that of the first C−S bond in the pathway 1, but in the pathway 2, the dissociated energy barrier of the second C−S bond is 0.11 eV lower than that of the first C−S bond. Comparing the highest dissociated energy barrier of pathway 1 (0.68 eV) and pathway 2 (0.5 eV), the structure of S/C/S(II) is regarded as a preferable product for the dissociation of CS{sub 2} on the Cu(100) surface.

  17. Hume-Rothery electron concentration rule across a whole solid solution range in a series of gamma-brasses in Cu-Zn, Cu-Cd, Cu-Al, Cu-Ga, Ni-Zn and Co-Zn alloy systems

    Science.gov (United States)

    Mizutani, U.; Noritake, T.; Ohsuna, T.; Takeuchi, T.

    2010-05-01

    The aim of the present work is to examine if the Hume-Rothery stabilisation mechanism holds across whole solid solution ranges in a series of gamma-brasses with especial attention to the role of vacancies introduced into the large unit cell. The concentration dependence of the number of atoms in the unit cell, N, for gamma-brasses in the Cu-Zn, Cu-Cd, Cu-Al, Cu-Ga, Ni-Zn and Co-Zn alloy systems was determined by measuring the density and lattice constants at room temperature. The number of itinerant electrons in the unit cell, e/uc, is evaluated by taking a product of N and the number of itinerant electrons per atom, e/a, for the transition metal element deduced earlier from the full-potential linearised augmented plane wave (FLAPW)-Fourier analysis. The results are discussed within the rigid-band model using as a host the density of states (DOS) derived earlier from the FLAPW band calculations for the stoichiometric gamma-brasses Cu5Zn8, Cu9Al4 and TM2Zn11 (TM = Co and Ni). A solid solution range of gamma-brasses in Cu-Zn, Cu-Cd, Cu-Al, Cu-Ga and Ni-Zn alloy systems is found to fall inside the existing pseudogap at the Fermi level. This is taken as confirmation of the validity of the Hume-Rothery stability mechanism for a whole solute concentration range of these gamma-brasses. An exception to this behaviour was found in the Co-Zn gamma-brasses, where orbital hybridisation effects are claimed to play a crucial role in stabilisation.

  18. Cu(II) salen complex with propylene linkage: An efficient catalyst in the formation of Csbnd X bonds (X = N, O, S) and biological investigations

    Science.gov (United States)

    Azam, Mohammad; Dwivedi, Sourabh; Al-Resayes, Saud I.; Adil, S. F.; Islam, Mohammad Shahidul; Trzesowska-Kruszynska, Agata; Kruszynski, Rafal; Lee, Dong-Ung

    2017-02-01

    The catalytic property of a mononuclear Cu(II) salen complex in Chan-Lam coupling reaction with phenyl boronic acid at room temperature is reported. The studied complex is found to be potential catalyst in the preparation of carbon-heteroatom bonds with excellent yields. The studied Cu(II) salen complex is monoclinic with cell parameters, a = 9.6807(5) (α 90°), (b = 17.2504(8) (β 112.429 (2), c = 11.1403 (6) (γ = 90°), and has distorted square planar environment around Cu(II) ion. Furthermore, there is no π⋯π interactions in the reported complex due to large distance between the centroid of aromatic rings. In addition, DNA binding study of Cu(II) salen complex by fluorescence and absorption spectroscopy is also reported. Moreover, the reported Cu(II) salen complex exhibits significant anticancer activity against MCF-7 cancer cell lines, and displays potential antimicrobial biofilm activity against P. aeruginosa, suggesting antimicrobial biofilm an important tool for suppression of resistant infections caused by P. aeruginosa.

  19. Stability of Cu-Precipitates in Al-Cu Alloys

    Directory of Open Access Journals (Sweden)

    Torsten E. M. Staab

    2018-06-01

    Full Text Available We present first principle calculations on formation and binding energies for Cu and Zn as solute atoms forming small clusters up to nine atoms in Al-Cu and Al-Zn alloys. We employ a density-functional approach implemented using projector-augmented waves and plane wave expansions. We find that some structures, in which Cu atoms are closely packed on {100}-planes, turn out to be extraordinary stable. We compare the results with existing numerical or experimental data when possible. We find that Cu atoms precipitating in the form of two-dimensional platelets on {100}-planes in the fcc aluminum are more stable than three-dimensional structures consisting of the same number of Cu-atoms. The preference turns out to be opposite for Zn in Al. Both observations are in agreement with experimental observations.

  20. Development of Copper-Catalyzed Electrophilic Trifluoromethylation and Exploiting Cu/Cu2O Nanowires with Novel Catalytic Reactivity

    KAUST Repository

    Li, Huaifeng

    2014-06-01

    This thesis is based on research in Cu-catalyzed electrophilic trifluoromethylation and exploiting Cu/Cu2O nanowires with novel catalytic reactivity for developing of catalytic and greener synthetic methods. A large number of biological active pharmaceuticals and agrochemicals contain fluorine substituents (-F) or trifluoromethyl groups (-CF3) because these moieties often result in profound changes of their physical, chemical, and biological properties, such as metabolic stability and lipophilicity. For this reason, the introduction of fluorine or trifluoromethyl groups into organic molecules has attracted intensive attention. Among them, transition metal-catalyzed trifluoromethylation reactions has proved to be an efficient and reliable strategy to construct carbon-fluorine (C-F) and carbontrifluoromethyl (C-CF3) bond. We have developed a catalytic process for the first time for trifluoromethylation of terminal alkynes with Togni’s reagent, affording trifluoromethylated acetylenes in good to excellent yields. The reaction is conducted at room temperature and exhibits tolerance to a range of functional groups. Derived from this discovery, the extension of work of copper catalyzed electrophilic trifluoromethylation were investigated which include the electrophilic trifluoromethylation of arylsulfinate salts and electrophilic trifluoromethylation of organotrifluoroborates. Because of growing environmental concern, the development of greener synthetic methods has drawn much attention. Nano-sized catalysts are environment-friendly and an attractive green alternative to the conventional homogeneous catalysts. The nano-sized catalysts can be easily separated from the reaction mixture due to their insolubility and thus they can be used recycled. Notably, because of the high reactivities of nano-sized metal catalysts, the use of ligands can be avoided and the catalysts loadings can be reduced greatly. Moreover, the nano-sized catalysts can increase the exposed surface

  1. Modeling and Measurement of Stress and Strain Evolution in Cu Interconnects

    International Nuclear Information System (INIS)

    Besser, Paul R.; Zhai, Charlie Jun

    2004-01-01

    The damascene fabrication method and the introduction of low-K dielectrics present a host of reliability challenges to Cu interconnects and fundamentally change the mechanical stress state of Cu lines used as interconnects for integrated circuits. In order to capture the effect of individual process steps on the stress evolution in the BEoL (Back End of Line), a process-oriented finite element modeling (FEM) approach was developed. In this model, the complete stress history at any step of BEoL can be simulated as a dual damascene Cu structure is fabricated. The model was calibrated with both wafer-curvature blanket film measurements and X-Ray diffraction (XRD) measurement of metal line stress. The Cu line stress evolution was simulated during the process of multi-step processing for dual damascene Cu/TEOS and Cu/low-k structures. The in-plane stress of Cu lines is nearly independent of subsequent processes, while the out-of-plane stress increases considerably with the subsequent process steps. The modeling results will be compared with recent XRD measurements and extended generically to illustrate the relative influence of the dielectric (ILD) modulus (E) and coefficient of thermal expansion (CTE) on strain/stress in the Cu lines. It will be shown that the stress magnitude and state (hydrostatic, deviatoric) depend on ILD properties. The stress along the line length (longitudinal) is substrate-dominated, while the transverse and normal stresses vary with both CTE and modulus of the dielectric. The hydrostatic stress is primarily determined by ILD modulus and is nearly independent of the ILD CTE, while the Von Mises stress depends on both CTE and E of the ILD. The stress of the Cu line tends to be more deviatoric with spin-on low K ILDs, and more hydrostatic with oxide encapsulation

  2. Generalized stacking fault energies, cleavage energies, ionicity and brittleness of Cu(Al/Ga/In)Se2 and CuGa(S/Se/Te)2

    Science.gov (United States)

    Xue, H. T.; Tang, F. L.; Gruhn, T.; Lu, W. J.; Wan, F. C.; Rui, Z. Y.; Feng, Y. D.

    2014-04-01

    We calculate the generalized stacking fault (GSF) energies and cleavage energies γcl of the chalcopyrite compounds CuAlSe2, CuGaSe2, CuInSe2, CuGaS2 and CuGaTe2 using first principles. From the GSF energies, we obtain the unstable stacking fault energies γus and intrinsic stacking fault energies γisf. By analyzing γus and γisf, we find that the \\langle \\bar{{1}}\\,1\\,0\\rangle (1 1 2) direction is the easiest slip direction for these five compounds. Also, for CuInSe2, it is most possible to undergo a dislocation-nucleation-induced plastic deformation along the \\langle \\bar{{1}}\\,1\\,0\\rangle (1 1 2) slip direction. We show that the (1 1 2) plane is the preferable plane for fracture in the five compounds by comparing γcl of the (0 0 1) and (1 1 2) planes. It is also found that both γus and γcl decrease as the cationic or anionic radius increases in these chalcopyrites, i.e. along the sequences CuAlSe2 → CuGaSe2 → CuInSe2 and CuGaS2 → CuGaSe2 → CuGaTe2. Based on the values of the ratio γcl/γus, we discuss the brittle-ductile properties of these compounds. All of the compounds can be considered as brittle materials. In addition, a strong relationship between γcl/γus and the total proportion of ionic bonding in these compounds is found.

  3. Mechanical properties and electrical conductivity of Cu-Cr and Cu-Cr-4% SiC nanocomposites for thermo-electric applications

    International Nuclear Information System (INIS)

    Mula, Suhrit; Sahani, Pankajini; Pratihar, S.K.; Mal, Siddhartha; Koch, Carl C.

    2011-01-01

    Highlights: → Ball-milled Cu-Cr and Cu-Cr-SiC nanopowders successfully consolidated by microwave sintering. → Addition of nanosize SiC in Cu-Cr leads to enhanced sintered density, wear and hardness. → A good combination of wear resistance, hardness and electrical conductivity resulted in Cu 94 Cr 6 -4% SiC. → Microwave suscepting SiC particles played a pivotal role in good densification retaining matrix grains 99 Cr 1 , Cu 94 Cr 6 , Cu 99 Cr 1 -4 wt.% SiC and Cu 94 Cr 6 -4 wt.% SiC (average particle size ∼30 nm). The 50 h ball-milled samples were uniaxially pressed, and then pellets were sintered at 800 deg. C, 900 deg. C and 1000 deg. C for a constant soaking period of 30 min by microwave sintering technique. Microstructural characterization was carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Sintered compacts resulted a highly densified compacts (∼95% relative density) while retaining ultra-fine grains (100-200 nm) in the matrix. The mechanical properties, namely, hardness and wear resistance, and electrical conductivity of the sintered specimens were also evaluated. The best combination of mechanical properties (e.g. hardness ∼2.4 GPa) and electrical conductivity (60.3% of IACS) were obtained for Cu 94 Cr 6 -4 wt.% SiC sintered at 900 deg. C. This is possibly due to presence of ultra-fine grains in the bulk samples, good densification and proper bonding between particles. The results were analyzed in the light of interactions of microwaves between metallic matrix and microwave susceptive SiC particulates.

  4. Removal of Cu from aqueous solutions by synthetic hydroxyapatite: EXAFS investigation

    International Nuclear Information System (INIS)

    Corami, Alessia; D'Acapito, Francesco; Mignardi, Silvano; Ferrini, Vincenzo

    2008-01-01

    The sorption of aqueous Cu on synthetic hydroxyapatite has been investigated by means of the results of a combined structural simulation and extended X-ray absorption fine structure (EXAFS) analysis. The removal of Cu was studied in batch experiments at 25 ± 2 deg. C. The sorption of Cu follows Langmuir behaviour and was attributed to a two-step mechanism involving surface complexation and ion exchange with Ca resulting in the formation of a copper-containing hydroxyapatite. EXAFS results suggest that the heavy metal is present in the Cu 2+ form. The structural experimental and theoretical analysis shows that Cu is bond to about four O atoms at a distance of about 1.95 A. In all the studied cases the immobilization site of Cu is the same. The fixation of Cu occurs in the surface sites of hydroxyapatite whereas the sorption in the Ca sites in the inner part of the structure is unlikely

  5. Influence of Cu content on the cell biocompatibility of Ti–Cu sintered alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Erlin, E-mail: zhangel@atm.neu.edu.cn [Key Lab. for Anisotropy and Texture of Materials, Education Ministry of China, Northeastern University, Shenyang 110819 (China); Jiamusi University, Jiamusi 154007 (China); Zheng, Lanlan [Jiamusi University, Jiamusi 154007 (China); Liu, Jie [Key Lab. for Anisotropy and Texture of Materials, Education Ministry of China, Northeastern University, Shenyang 110819 (China); Dept. of Prosthodontics, The Affiliated Hospital of Medical College, Qingdao University, Qingdao 266003 (China); Bai, Bing [Dept. of Prosthodontics, School of Stomatology, China Medical University, Liaoning Institute of Dental Research, Shenyang 110001 (China); Liu, Cong [Jiamusi University, Jiamusi 154007 (China)

    2015-01-01

    The cell toxicity and the cell function of Ti–Cu sintered alloys with different Cu contents (2, 5, 10 and 25 wt.%, respectively) have been investigated in comparison with commercial pure titanium in order to assess the influence of Cu content on the cell biocompatibility of the Ti–Cu alloys. The cytotoxicity was studied by examining the MG63 cell response by CCK8 assessment. The cell morphology was evaluated by acridine orange/ethidium bromide (AO/EB) fluorescence and observed under scanning electronic microscopy (SEM). The cell function was monitored by measuring the AKP activity. It has been shown by the AO/EB morphology results that the cell death on both cp-Ti sample and Ti–Cu samples is due to apoptosis rather than necrosis. Although more apoptotic cells were found on the Ti–2Cu and Ti–5Cu samples, no evidence of Cu content dependent manner of apoptosis has been found. SEM observation indicated very good cell adhesion and spread on the cp-Ti sample and the Ti–Cu samples with different Cu contents. CCK8 results displayed that increase in the Cu content in Ti–Cu alloys does not bring about any difference in the cell viability. In addition, AKP test results indicated that no difference in the differentiation of MG63 was found between the cp-Ti and the Ti–Cu samples and among the Ti–Cu samples. All results indicated that Ti–Cu alloys exhibit very good cell biocompatibility and the Cu content up to 25 wt.% in the Ti–Cu alloys has no influence on the cell proliferation and differentiation. - Highlights: • The effect of Cu content on the cell biocompatibility has been investigated. • Cu content shows no influence on the cell proliferation. • Cu content shows no effect on the cell differentiation.

  6. Influence of Cu content on the cell biocompatibility of Ti–Cu sintered alloys

    International Nuclear Information System (INIS)

    Zhang, Erlin; Zheng, Lanlan; Liu, Jie; Bai, Bing; Liu, Cong

    2015-01-01

    The cell toxicity and the cell function of Ti–Cu sintered alloys with different Cu contents (2, 5, 10 and 25 wt.%, respectively) have been investigated in comparison with commercial pure titanium in order to assess the influence of Cu content on the cell biocompatibility of the Ti–Cu alloys. The cytotoxicity was studied by examining the MG63 cell response by CCK8 assessment. The cell morphology was evaluated by acridine orange/ethidium bromide (AO/EB) fluorescence and observed under scanning electronic microscopy (SEM). The cell function was monitored by measuring the AKP activity. It has been shown by the AO/EB morphology results that the cell death on both cp-Ti sample and Ti–Cu samples is due to apoptosis rather than necrosis. Although more apoptotic cells were found on the Ti–2Cu and Ti–5Cu samples, no evidence of Cu content dependent manner of apoptosis has been found. SEM observation indicated very good cell adhesion and spread on the cp-Ti sample and the Ti–Cu samples with different Cu contents. CCK8 results displayed that increase in the Cu content in Ti–Cu alloys does not bring about any difference in the cell viability. In addition, AKP test results indicated that no difference in the differentiation of MG63 was found between the cp-Ti and the Ti–Cu samples and among the Ti–Cu samples. All results indicated that Ti–Cu alloys exhibit very good cell biocompatibility and the Cu content up to 25 wt.% in the Ti–Cu alloys has no influence on the cell proliferation and differentiation. - Highlights: • The effect of Cu content on the cell biocompatibility has been investigated. • Cu content shows no influence on the cell proliferation. • Cu content shows no effect on the cell differentiation

  7. Mechanism of C-C and C-H bond cleavage in ethanol oxidation reaction on Cu2O(111): a DFT-D and DFT+U study.

    Science.gov (United States)

    Xu, Han; Miao, Bei; Zhang, Minhua; Chen, Yifei; Wang, Lichang

    2017-10-04

    The performance of transition metal catalysts for ethanol oxidation reaction (EOR) in direct ethanol fuel cells (DEFCs) may be greatly affected by their oxidation. However, the specific effect and catalytic mechanism for EOR of transition metal oxides are still unclear and deserve in-depth exploitation. Copper as a potential anode catalyst can be easily oxidized in air. Thus, in this study, we investigated C-C and C-H bond cleavage reactions of CH x CO (x = 1, 2, 3) species in EOR on Cu 2 O(111) using PBE+U calculations, as well as the specific effect of +U correction on the process of adsorption and reaction on Cu 2 O(111). It was revealed that the catalytic performance of Cu 2 O(111) for EOR was restrained compared with that of Cu(100). Except for the C-H cleavage of CH 2 CO, all the reaction barriers for C-C and C-H cleavage were higher than those on Cu(100). The most probable pathway for CH 3 CO to CHCO on Cu 2 O(111) was the continuous dehydrogenation reaction. Besides, the barrier for C-C bond cleavage increased due to the loss of H atoms in the intermediate. Moreover, by the comparison of the traditional GGA/PBE method and the PBE+U method, it could be concluded that C-C cleavage barriers would be underestimated without +U correction, while C-H cleavage barriers would be overestimated. +U correction was proved to be necessary, and the reaction barriers and the values of the Hubbard U parameter had a proper linear relationship.

  8. Renal Cu and Na excretion and hepatic Cu metabolism in both Cu acclimated and non acclimated rainbow trout (Oncorhynchus mykiss)

    DEFF Research Database (Denmark)

    Grosell, M.; Hogstrand, C.; Wood, C.M.

    1998-01-01

    protein depending on whether the Cu is derived from recent branchial uptake or is already present in the plasma prior to Cu-64 exposure. The plasma Cu pool derived from recent branchial uptake and the Cu pool present in the plasma prior to Cu-64 exposure is accessible to renal excretion to different...... Na+ efflux decreased by 40%, which was largely due to increased tubular Na+ reabsorption. Renal compensation for the impaired branchial Na+ uptake, seen during Cu exposure, thus seems to be involved in Cu acclimation in rainbow trout. (C) 1998 Elsevier Science B.V....

  9. CNTs Modified and Enhanced Cu Matrix Composites

    Directory of Open Access Journals (Sweden)

    ZHANG Wen-zhong

    2016-12-01

    Full Text Available The composite powders of 2%-CNTs were prepared by wet ball milling and hydrogen annealing treatment-cold pressing sintering was used to consolidate the ball milled composite powders with different modifications of the CNTs. The results show that the length of the CNTs is shortened, ports are open, and amorphous carbon content is increased by ball milling. And after a mixed acid purification, the impurity on the surface of the CNTs is completely removed,and a large number of oxygen-containing reactive groups are introduced; the most of CNTs can be embedded in the Cu matrix and the CNTs have a close bonding with the Cu matrix, forming the lamellar composite structure, then, ultrafine-grained composite powders can be obtained by hydrogen annealing treatment. Shortening and purification of the CNTs are both good for dispersion and bonding of CNTs in the Cu matrix, and the tensile strength and hardness of the composites after shortening and purification reaches the highest, and is 296MPa and 139.8HV respectively, compared to the matrix, up to 123.6% in tensile strength and 42.9% in hardness, attributed to the fine grain strengthening and load transferring.

  10. Wafer-level vacuum/hermetic packaging technologies for MEMS

    Science.gov (United States)

    Lee, Sang-Hyun; Mitchell, Jay; Welch, Warren; Lee, Sangwoo; Najafi, Khalil

    2010-02-01

    An overview of wafer-level packaging technologies developed at the University of Michigan is presented. Two sets of packaging technologies are discussed: (i) a low temperature wafer-level packaging processes for vacuum/hermeticity sealing, and (ii) an environmentally resistant packaging (ERP) technology for thermal and mechanical control as well as vacuum packaging. The low temperature wafer-level encapsulation processes are implemented using solder bond rings which are first patterned on a cap wafer and then mated with a device wafer in order to encircle and encapsulate the device at temperatures ranging from 200 to 390 °C. Vacuum levels below 10 mTorr were achieved with yields in an optimized process of better than 90%. Pressures were monitored for more than 4 years yielding important information on reliability and process control. The ERP adopts an environment isolation platform in the packaging substrate. The isolation platform is designed to provide low power oven-control, vibration isolation and shock protection. It involves batch flip-chip assembly of a MEMS device onto the isolation platform wafer. The MEMS device and isolation structure are encapsulated at the wafer-level by another substrate with vertical feedthroughs for vacuum/hermetic sealing and electrical signal connections. This technology was developed for high performance gyroscopes, but can be applied to any type of MEMS device.

  11. Impact of SiO2 on Al–Al thermocompression wafer bonding

    International Nuclear Information System (INIS)

    Malik, Nishant; Finstad, Terje G; Schjølberg-Henriksen, Kari; Poppe, Erik U; Taklo, Maaike M V

    2015-01-01

    Al–Al thermocompression bonding suitable for wafer level sealing of MEMS devices has been investigated. This paper presents a comparison of thermocompression bonding of Al films deposited on Si with and without a thermal oxide (SiO 2 film). Laminates of diameter 150 mm containing device sealing frames of width 200 µm were realized. The wafers were bonded by applying a bond force of 36 or 60 kN at bonding temperatures ranging from 300–550 °C for bonding times of 15, 30 or 60 min. The effects of these process variations on the quality of the bonded laminates have been studied. The bond quality was estimated by measurements of dicing yield, tensile strength, amount of cohesive fracture in Si and interfacial characterization. The mean bond strength of the tested structures ranged from 18–61 MPa. The laminates with an SiO 2 film had higher dicing yield and bond strength than the laminates without SiO 2 for a 400 °C bonding temperature. The bond strength increased with increasing bonding temperature and bond force. The laminates bonded for 30 and 60 min at 400 °C and 60 kN had similar bond strength and amount of cohesive fracture in the bulk silicon, while the laminates bonded for 15 min had significantly lower bond strength and amount of cohesive fracture in the bulk silicon. (paper)

  12. Organic acids, amino acids compositions in the root exudates and Cu-accumulation in castor (Ricinus communis L.) Under Cu stress.

    Science.gov (United States)

    Huang, Guoyong; Guo, Guangguang; Yao, Shiyuan; Zhang, Na; Hu, Hongqing

    2016-01-01

    Ricinus communis L. is a hyperaccumulation plant newly discovered in an abandoned land of Cu mine in China. A hydroponic experiment was then carried out to determine the root exudates in the Cu-tolerant castor (Ricinus communis L.). Plants were grown in nutrient solution with increasing level of Cu doses (0, 100, 250, 500, and 750 μmol/L Cu) in the form of CuSO4. Cu accumulation in the roots and shoots of castor, and root exudates collected from the castor were measured. The results indicated that the castor had a high Cu accumulation capacity and the Cu concentrations in the shoots and roots of the castor treated with 750 μmol/L Cu were 177.1, 14586.7 mg/kg, respectively. Tartaric was the largest in the root exudates in terms of concentrations, which reached up to 329.13 μmol/g (dry plant) in the level of 750 μmol/L Cu. There was a significantly positive linear relationship between the Cu concentration in root and the concentration of succinic (R = 0.92, P < 0.05), tartaric (R = 0.96, P < 0.01), and citric (R = 0.89, P < 0.05). These results indicated that the difference in root exudation from castor could affect their Cu tolerance. What is more, significant is that the high tartaric and citric, the low oxalic and cysteine in the root exudation of castor contributed to toleration of high Cu concentrations.

  13. Science and technology of plasma activated direct wafer bonding

    Science.gov (United States)

    Roberds, Brian Edward

    This dissertation studied the kinetics of silicon direct wafer bonding with emphasis on low temperature bonding mechanisms. The project goals were to understand the topological requirements for initial bonding, develop a tensile test to measure the bond strength as a function of time and temperature and, using the kinetic information obtained, develop lower temperature methods of bonding. A reproducible surface metrology metric for bonding was best described by power spectral density derived from atomic force microscopy measurements. From the tensile strength kinetics study it was found that low annealing temperatures could be used to obtain strong bonds, but at the expense of longer annealing times. Three models were developed to describe the kinetics. A diffusion controlled model and a reaction rate controlled model were developed for the higher temperature regimes (T > 600sp°C), and an electric field assisted oxidation model was proposed for the low temperature range. An in situ oxygen plasma treatment was used to further enhance the field-controlled mechanism which resulted in dramatic increases in the low temperature bonding kinetics. Multiple internal transmission Fourier transform infrared spectroscopy (MIT-FTIR) was used to monitor species evolution at the bonded interface and a capacitance-voltage (CV) study was undertaken to investigate charge distribution and surface states resulting from plasma activation. A short, less than a minute, plasma exposure prior to contacting the wafers was found to obtain very strong bonds for hydrophobic silicon wafers at very low temperatures (100sp°C). This novel bonding method may enable new technologies involving heterogeneous material systems or bonding partially fabricated devices to become realities.

  14. Cu-Zr-Ag bulk metallic glasses based on Cu8Zr5 icosahedron

    International Nuclear Information System (INIS)

    Xia Junhai; Qiang Jianbing; Wang Yingmin; Wang Qing; Dong Chuang

    2007-01-01

    Based on the cluster line criterion, the Ag addition into the Cu 8 Zr 5 cluster composition is investigated for the search of ternary Cu-Zr-Ag bulk metallic glasses with high glass forming abilities. Two initial binary compositions Cu 0.618 Zr 0.382 and Cu 0.64 Zr 0.36 are selected. The former one corresponds to a deep eutectic point; it is also the composition of the Cu 8 Zr 5 icosahedron, which is derived from the Cu 8 Zr 3 structure. The latter one, which can be regarded as the Cu 8 Zr 5 cluster plus a glue atom Cu, is the best glass-forming composition in the Cu-Zr binary system. Two composition lines (Cu 0.618 Zr 0.382 ) 1-x Ag x and (Cu 0.64 Zr 0.36 ) 1-x Ag x are thus constructed in the Cu-Zr-Ag system by linking these two compositions with the third constitute Ag. A series of Cu-Zr-Ag bulk metallic glasses are found with 2-8 at.% Ag contents in both composition lines. The optimum composition (Cu 0.618 Zr 0.382 ) 0.92 Ag 0.08 within the searched region with the highest T g /T l = 0.633, is located along the cluster line (Cu 0.618 Zr 0.382 ) 1-x Ag x , where the deep eutectic Cu 0.618 Zr 0.382 exactly corresponds to the dense packing cluster Cu 8 Zr 5 . The alloying mechanism is discussed in the light of atomic size and electron concentration factors

  15. Effects of processing parameters on Be/CuCrZr joining

    International Nuclear Information System (INIS)

    Park, Jeong-Yong; Lee, Jung-Suk; Choi, Byung-Kwon; Park, Sang-Yun; Hong, Bong Guen; Jeong, Yong Hwan; Jung, Ki-Jung

    2007-01-01

    A joining of Be/CuCrZr has been considered as the key technology for the fabrication of the ITER first wall. Among the joining methods, Hot isostatic pressing (HIP), which is one of the diffusion bonding methods, is the most feasible method to join the Be and CuCrZr alloy. In the HIP joining of Be and CuCrZr, the interlayer was used to prevent the formation of brittle intermetallic compounds in the interface. Therefore, it is crucial to select a suitable interlayer for a joining of Be and CuCrZr. On the other hand, the diffusion between Be and CuCrZr would be enhanced with an increase of the HIP joining temperature, thereby increasing the joint strength. However, the HIP joining temperature is limited by the mechanical properties of CuCrZr. During the fabrication process of the ITER first wall, CuCrZr is subjected to several thermal cycles including a solution annealing, a cooling and an aging. The HIP joining of Be and CuCrZr corresponds to the aging of CuCrZr. The HIP joining at a higher temperature would cause a degradation of the mechanical properties of CuCrZr by an overaging effect although it is preferable for an improvement of the joint strength. In this study, the effect of the cooling rate on the mechanical properties of aged CuCrZr was investigated to find the maximum HIP temperature without a degradation of the mechanical properties of CuCrZr

  16. All-electron ab initio calculations of YBa2Cu3O7 with self-consistence crystal field

    Institute of Scientific and Technical Information of China (English)

    刘洪霖; 陈念贻

    1995-01-01

    The quantum chemical calculations of cluster YBa2Cu3O7 considering all electrons have been per-formed by using the ab initio HF method with self-consistence crystal field.A Hartree-Fork surface potentialis proposed to make an asymmetric duster model possess a relatively symmetric potential field and to obtaina relatively symmetric electronic structure,electronic distributions,frontier orbitals,and bond order,etc.Thesuggestions that there exists a covalent bonding complex,[CuO2-O-CuO-O-Cu2]6,8-,in the cell unit ofthe crystal,and the cell units are connected with each other by ionic bonds along the c direction of the crys-tal lattice are offered based on the chemical bonding characteristics from the calculated results.The importantcontribution of the apical oxygen to superconductivities is emphasized as well.

  17. Stability enhancement of Cu2S against Cu vacancy formation by Ag alloying

    Science.gov (United States)

    Barman, Sajib K.; Huda, Muhammad N.

    2018-04-01

    As a potential solar absorber material, Cu2S has proved its importance in the field of renewable energy. However, almost all the known minerals of Cu2S suffer from spontaneous Cu vacancy formation in the structure. The Cu vacancy formation causes the structure to possess very high p-type doping that leads the material to behave as a degenerate semiconductor. This vacancy formation tendency is a major obstacle for this material in this regard. A relatively new predicted phase of Cu2S which has an acanthite-like structure was found to be preferable than the well-known low chalcocite Cu2S. However, the Cu-vacancy formation tendency in this phase remained similar. We have found that alloying silver with this structure can help to reduce Cu vacancy formation tendency without altering its electronic property. The band gap of silver alloyed structure is higher than pristine acanthite Cu2S. In addition, Cu diffusion in the structure can be reduced with Ag doped in Cu sites. In this study, a systematic approach is presented within the density functional theory framework to study Cu vacancy formation tendency and diffusion in silver alloyed acanthite Cu2S, and proposed a possible route to stabilize Cu2S against Cu vacancy formations by alloying it with Ag.

  18. Characterization of p-CuI prepared by the SILAR technique on Cu-tape/n-CuInS2 for solar cells

    International Nuclear Information System (INIS)

    Sankapal, B.R.; Ennaoui, A.; Guminskaya, T.; Dittrich, Th.; Bohne, W.; Roehrich, J.; Strub, E.; Lux-Steiner, M.Ch.

    2005-01-01

    CuI has been synthesized at room temperature on Cu-tape/n-CuInS 2 by using the SILAR technique (successive ionic layer adsorption and reaction). The influence of wet chemical iodine treatment on the CuI has been investigated in more detail. The films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), elastic recoil detection analysis (ERDA) and surface photovoltage (SPV) techniques. The CuI films contain the no. gammano. -phase of the Zinkblende structure. The crystallites are preferentially oriented in the (111) direction. After wet chemical iodine treatment, the fibrous surface morphology changed to a more dense CuI film with larger crystallites. Oxides could not be detected on the CuI surface. The density of surface states of CIS decreased after the CuI deposition. The importance of the wet chemical iodine treatment for the performance of Cu-tape/n-CuInS 2 /p-CuI solar cells has been demonstrated

  19. Cu diffusion as an alternative method for nanopatterned CuTCNQ film growth

    International Nuclear Information System (INIS)

    Capitán, M J; Álvarez, J; Miranda, R; Navío, C

    2016-01-01

    In this paper we show by means of ‘in situ’ x-ray diffraction studies that CuTCNQ formation from Cu(solid)–TCNQ(solid tetracyanoquinodimethane) goes through Cu diffusion at room temperature. The film quality depends on the TCNQ evaporation rate. At low evaporation rate we get a single phase-I CuTCNQ film very well crystallized and well oriented. The film has a CuTCNQ(0 2 0) orientation. The film is formed by CuTCNQ nanorods of a very homogeneous size. The film homogeneity has also been seen by atomic force microscopy (AFM). The electronic properties of the film have been measured by x-ray photoelectron spectroscopy (XPS) and ultra-violet photoelectron spectroscopy (UPS). Thus, the Cu-diffusion method has arisen as a very simple, clean and efficient method to grow localized CuTCNQ nanorods on Cu, opening up new insights for technological applications. (paper)

  20. High-κ Al{sub 2}O{sub 3} material in low temperature wafer-level bonding for 3D integration application

    Energy Technology Data Exchange (ETDEWEB)

    Fan, J., E-mail: fanji@hust.edu.cn; Tu, L. C. [MOE Key Laboratory of Fundamental Physical Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Tan, C. S. [School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2014-03-15

    This work systematically investigated a high-κ Al{sub 2}O{sub 3} material for low temperature wafer-level bonding for potential applications in 3D microsystems. A clean Si wafer with an Al{sub 2}O{sub 3} layer thickness of 50 nm was applied as our experimental approach. Bonding was initiated in a clean room ambient after surface activation, followed by annealing under inert ambient conditions at 300 °C for 3 h. The investigation consisted of three parts: a mechanical support study using the four-point bending method, hermeticity measurements using the helium bomb test, and thermal conductivity analysis for potential heterogeneous bonding. Compared with samples bonded using a conventional oxide bonding material (SiO{sub 2}), a higher interfacial adhesion energy (∼11.93 J/m{sup 2}) and a lower helium leak rate (∼6.84 × 10{sup −10} atm.cm{sup 3}/sec) were detected for samples bonded using Al{sub 2}O{sub 3}. More importantly, due to the excellent thermal conductivity performance of Al{sub 2}O{sub 3}, this technology can be used in heterogeneous direct bonding, which has potential applications for enhancing the performance of Si photonic integrated devices.

  1. Complete Fabrication of a Traversable 3 µm Thick NbN Film Superconducting Coil with Cu plated layer of 42m in Length in a Spiral Three-Storied Trench Engraved in a Si Wafer of 76.2 mm in Diameter Formed by MEMS Technology for a Compact SMES with High Energy Storage Volume Density

    Science.gov (United States)

    Suzuki, Yasuhiro; Iguchi, Nobuhiro; Adachi, Kazuhiro; Ichiki, Akihisa; Hioki, Tatsumi; Hsu, Che-Wei; Sato, Ryoto; Kumagai, Shinya; Sasaki, Minoru; Noh, Joo-Hyong; Sakurahara, Yuuske; Okabe, Kyohei; Takai, Osamu; Honma, Hideo; Watanabe, Hideo; Sakoda, Hitoshi; Sasagawa, Hiroaki; Doy, Hideyuki; Zhou, Shuliang; Hori, H.; Nishikawa, Shigeaki; Nozaki, Toshihiro; Sugimoto, Noriaki; Motohiro, Tomoyoshi

    2017-09-01

    Based on the concept of a novel approach to make a compact SMES unit composed of a stack of Si wafers using MEMS process proposed previously, a complete fabrication of a traversable 3 µam thick NbN film superconducting coil lined with Cu plated layer of 42m in length in a spiral three-storied trench engraved in and extended over a whole Si-wafer of 76.2 mm in diameter was attained for the first time. With decrease in temperature, the DC resistivity showed a metallic decrease indicating the current pass was in the Cu plated layer and then made a sudden fall to residual contact resistance indicating the shift of current pass from the Cu plated layer to the NbN film at the critical temperature Tc of 15.5K by superconducting transition. The temperature dependence of I-V curve showed the increase in the critical current with decrease in the temperature and the highest critical current measured was 220 mA at 4K which is five times as large as that obtained in the test fabrication as the experimental proof of concept presented in the previous report. This completion of a one wafer superconducting NbN coil is an indispensable step for the next proof of concept of fabrication of series-connected two wafer coils via superconductive joint which will read to series connected 600 wafer coils finally, and for replacement of NbN by high Tc superconductor such as YBa2Cu3O7-x for operation under the cold energy of liquid hydrogen or liquid nitrogen.

  2. Controllable synthesis and enhanced photocatalytic properties of Cu2O/Cu31S16 composites

    International Nuclear Information System (INIS)

    Liu, Xueqin; Li, Zhen; Zhang, Qiang; Li, Fei

    2012-01-01

    Highlights: ► Facile sonochemical route. ► The content of Cu 31 S 16 in the Cu 2 O/Cu 31 S 16 can be easily controlled. ► Structure and optical properties of Cu 2 O/Cu 31 S 16 were discussed. ► Enhanced photocatalytic property of Cu 2 O/Cu 31 S 16 . ► Cu 2 O/Cu 31 S 16 core/shell structures were more stable than single Cu 2 O particles. -- Abstract: The controlled synthesis of Cu 2 O/Cu 31 S 16 microcomposites with hierarchical structures had been prepared via a convenient sonochemical route. Ultrasonic irradiation of a mixture of Cu 2 O and (NH 2 ) 2 CS in an aqueous medium yielded Cu 2 O/Cu 31 S 16 composites. The content of Cu 31 S 16 in the Cu 2 O/Cu 31 S 16 can be easily controlled by adjusting the synthesis time. The Cu 31 S 16 layer not only protected and stabilized Cu 2 O particles, but also prohibited the recombination of photogenerated electrons–holes pair between Cu 31 S 16 and Cu 2 O. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR) spectra, ultraviolet–visible (UV–Vis) spectroscopy and photoluminescence (PL) spectroscopy were used to characterize the products. Photocatalytic performance of the Cu 2 O/Cu 31 S 16 hierarchical structures was evaluated by measuring the decomposition rate of methyl orange solution under natural light. To the best of our knowledge, this is the first report on the preparation and photocatalytic activity of Cu 2 O/Cu 31 S 16 microcomposite. Additionally, the Cu 2 O/Cu 31 S 16 core/shell structures were more stable than single Cu 2 O particles during photocatalytic process since the photocatalytic activity of the second reused architecture sample was much higher than that of pure Cu 2 O. The Cu 2 O/Cu 31 S 16 microcomposites may be a good promising candidate for wastewater treatment.

  3. Fabrication of a Cu/Ni stack in supercritical carbon dioxide at low-temperature

    Energy Technology Data Exchange (ETDEWEB)

    Rasadujjaman, Md, E-mail: rasadphy@duet.ac.bd [Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511 (Japan); Department of Physics, Dhaka University of Engineering & Technology, Gazipur 1700 (Bangladesh); Watanabe, Mitsuhiro [Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511 (Japan); Sudoh, Hiroshi; Machida, Hideaki [Gas-Phase Growth Ltd., 2-24-16 Naka, Koganei, Tokyo 184-0012 (Japan); Kondoh, Eiichi [Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511 (Japan)

    2015-09-30

    We report the low-temperature deposition of Cu on a Ni-lined substrate in supercritical carbon dioxide. A novel Cu(I) amidinate precursor was used to reduce the deposition temperature. From the temperature dependence of the growth rate, the activation energy for Cu growth on the Ni film was determined to be 0.19 eV. The films and interfaces were characterized by Auger electron spectroscopy. At low temperature (140 °C), we successfully deposited a Cu/Ni stack with a sharp Cu/Ni interface. The stack had a high adhesion strength (> 1000 mN) according to microscratch testing. The high adhesion strength originated from strong interfacial bonding between the Cu and the Ni. However, at a higher temperature (240 °C), significant interdiffusion was observed and the adhesion became weak. - Highlights: • Cu/Ni stack fabricated in supercritical CO{sub 2} at low temperature. • A novel Cu(I) amidinate precursor was used to reduce the deposition temperature. • Adhesion strength of Cu/Ni stack improved dramatically. • Fabricated Cu/Ni stack is suitable for Cu interconnections in microelectronics.

  4. Identification of the c(10×6)-CN/Cu(001) surface structure

    KAUST Repository

    Shuttleworth, I.G.

    2014-01-01

    © 2014 Elsevier B.V. All rights reserved. A systematic survey of all possible c(10 x 6)-CN/Cu(0 0 1) structures has been performed using density functional theory (DFT). A group of four preferred structures is presented with one of the structures identified as optimal. An analysis of the bonding within the optimal structure has shown that a significant localisation of the surface Cu 4s bonds occurs in the saturated system.

  5. Identification of the c(10×6)-CN/Cu(001) surface structure

    KAUST Repository

    Shuttleworth, I.G.

    2014-12-01

    © 2014 Elsevier B.V. All rights reserved. A systematic survey of all possible c(10 x 6)-CN/Cu(0 0 1) structures has been performed using density functional theory (DFT). A group of four preferred structures is presented with one of the structures identified as optimal. An analysis of the bonding within the optimal structure has shown that a significant localisation of the surface Cu 4s bonds occurs in the saturated system.

  6. Stability of muon-oxygen bond sites in RBa2Cu3O7

    International Nuclear Information System (INIS)

    Lichti, R.L.; Adams, T.R.; Gibson, T.L.

    1991-01-01

    Relative energies of muon probe sites in the chain region of RBa 2 Cu 3 O 7 (RBCO) are investigated using a molecular quantum chemistry calculation for (Oμ) - embedded in a cluster of point charges to simulate local charge distributions in RBCO. Partial Cu-O chain covalency results in a O-μ...O muon site between the chain and bridging oxygens. However, Cu-μ ''hydride''-like sites are suggested by results for nominally ionic clusters. (orig.)

  7. Enhancing the CuCrZr/316L HIP-joint by Ni electroplating

    Energy Technology Data Exchange (ETDEWEB)

    Wei, R. [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei, 230031 (China); Science Island Branch of Graduate School, University of Science & Technology of China, Hefei, 230031 (China); Zhao, S.X., E-mail: sxzhao@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Science, Lanzhou, 730000 (China); Dong, H.; Che, H.Y. [Advanced Technology and Materials Co. Ltd., Beijing, 100081 (China); Li, Q.; Wang, W.J.; Wang, J.C.; Wang, X.L.; Sun, Z.X. [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei, 230031 (China); Luo, G.-N. [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei, 230031 (China); Science Island Branch of Graduate School, University of Science & Technology of China, Hefei, 230031 (China); Hefei Center for Physical Science and Technology, Hefei, 230022 (China); Hefei Science Center of Chinese Academy of Sciences, Hefei, 230027 (China)

    2017-04-15

    Highlights: • The quality of CuCrZr/316L HIP-joint can be enhanced by nickel electroplating on CuCrZr and 316L. • Nickel layer can prevent the occurrence of nickel-poor region in 316L and protect CuCrZr from oxidation. • A Charpy Impact Value as high as 111.5 ± 3.3 J/cm{sup 2} can be obtained by HIP at 980 °C, 140 MPa for 2 h. • At high temperature, CuCrZr is easily oxidized even in the situation of a high vacuum degree of 2 × 10{sup −5} Pa. - Abstract: The quality of CuCrZr/316L joint is crucial for the safety of ITER hypervapotron cooling structure and hot isostatic pressing (HIP) is an important bonding technique for this structure. In this paper, the authors present a finding that the CuCrZr/316L HIP-joint can be enhanced by nickel electroplating on 316L and CuCrZr. A Charpy Impact Value as high as 111.5 ± 3.3 J/cm{sup 2}, which is more than two times the value in a published article, is obtained. The influence of nickel electroplating is twofold: (1) it can prevent the occurrence of nickel-poor region in 316L and the formation of ferrite; (2) it can protect CuCrZr from oxidation during the heating stage of HIP. However, tensile test is not as effective as Charpy Impact Test in characterizing the bonding quality of the CuCrZr/316L HIP-joint. The surface treatment employed in this study is amenable to batch-scale industrial manufacturing at low cost.

  8. Advances in Cost-Efficient Thin-Film Photovoltaics Based on Cu(In,Ga)Se2

    OpenAIRE

    Michael Powalla; Stefan Paetel; Dimitrios Hariskos; Roland Wuerz; Friedrich Kessler; Peter Lechner; Wiltraud Wischmann; Theresa Magorian Friedlmeier

    2017-01-01

    In this article, we discuss the leading thin-film photovoltaic (PV) technology based on the Cu(In,Ga)Se2 (CIGS) compound semiconductor. This contribution includes a general comparison with the conventional Si-wafer-based PV technology and discusses the basics of the CIGS technology as well as advances in world-record-level conversion efficiency, production, applications, stability, and future developments with respect to a flexible product. Once in large-scale mass production, the CIGS techno...

  9. Metallicity of Ca{sub 2}Cu{sub 6}P{sub 5} with single and double copper-pnictide layers

    Energy Technology Data Exchange (ETDEWEB)

    Li, Li, E-mail: lil2@ornl.gov [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Parker, David [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Chi, Miaofang [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Tsoi, Georgiy M.; Vohra, Yogesh K. [Department of Physics, University of Alabama at Birmingham, Birmingham, AL 35294 (United States); Sefat, Athena S., E-mail: sefata@ornl.gov [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

    2016-06-25

    We report thermodynamic and transport properties, and also theoretical calculations, for Cu-based compound Ca{sub 2}Cu{sub 6}P{sub 5} and compare with CaCu{sub 2-δ}P{sub 2}. Both materials have layers of edge-sharing copper pnictide tetrahedral CuP{sub 4}, similar to Fe–As and Fe–Se layers (with FeAs{sub 4}, FeSe{sub 4}) in the iron-based superconductors. Despite the presence of this similar transition-metal pnictide layer, we find that both Ca{sub 2}Cu{sub 6}P{sub 5} and CaCu{sub 2-δ}P{sub 2} have temperature-independent magnetic susceptibility and show metallic behavior with no evidence of either magnetic ordering or superconductivity down to 1.8 K CaCu{sub 2-δ}P{sub 2} is slightly off-stoichiometric, with δ = 0.14. Theoretical calculations suggest that unlike Fe 3d-based magnetic materials with a large density of states (DOS) at the Fermi surface, Cu have comparatively low DOS, with the majority of the 3d spectral weight located well below Fermi level. The room-temperature resistivity value of Ca{sub 2}Cu{sub 6}P{sub 5} is only 9 μΩ-cm, due to a substantial plasma frequency and an inferred electron-phonon coupling λ of 0.073 (significantly smaller than that of metallic Cu). Also, microscopy result shows that Cu–Cu distance along the c-axis within the double layers can be very short (2.5 Å), even shorter than metallic elemental copper bond (2.56 Å). The value of dρ/dT for CaCu{sub 2-δ}P{sub 2} at 300 K is approximately three times larger than in Ca{sub 2}Cu{sub 6}P{sub 5}, which suggests the likelihood of stronger electron-phonon coupling. This study shows that the details of Cu–P layers and bonding are important for their transport characteristics. In addition, it emphasizes the remarkable character of the DOS of ‘122’ iron-based materials, despite much structural similarities. - Highlights: • A comprehensive study on Cu-based compound Ca{sub 2}Cu{sub 6}P{sub 5} and compare with CaCu{sub 2-δ}P{sub 2}. • Both materials have layers of

  10. The effects of H+ implants on YBa2Cu3O7 superconducting materials

    International Nuclear Information System (INIS)

    Luo Chenglin; Pan Guoqiang; Han Ming; Wang Guanghou

    1993-09-01

    The variations of microstructure and electrical properties of Y-Ba-Cu O with and without H + implantation have been studied by scanning electron microscope, X-ray diffraction and IR spectrum techniques. The results have shown that these variations are directly relative to the intrinsic quality of YBa 2 Cu 3 O 7 . Microstructural change is responsible for the variations of electrical properties of YBa 2 Cu 3 O 7 superconductor. The Cu H bond formed by H + implanted into YBa 2 Cu 3 O 7 is not a key factor for these variations

  11. Room Temperature Radiolytic Synthesized Cu@CuAlO2-Al2O3 Nanoparticles

    Directory of Open Access Journals (Sweden)

    Nayereh Soltani

    2012-09-01

    Full Text Available Colloidal Cu@CuAlO2-Al2O3 bimetallic nanoparticles were prepared by a gamma irradiation method in an aqueous system in the presence of polyvinyl pyrrolidone (PVP and isopropanol respectively as a colloidal stabilizer and scavenger of hydrogen and hydroxyl radicals. The gamma irradiation was carried out in a 60Co gamma source chamber with different doses up to 120 kGy. The formation of Cu@CuAlO2-Al2O3 nanoparticles was observed initially by the change in color of the colloidal samples from colorless to brown. Fourier transform infrared spectroscopy (FTIR confirmed the presence of bonds between polymer chains and the metal surface at all radiation doses. Results of transmission electron microscopy (TEM, energy dispersive X-ray spectrometry (EDX, and X-ray diffraction (XRD showed that Cu@CuAlO2-Al2O3 nanoparticles are in a core-shell structure. By controlling the absorbed dose and precursor concentration, nanoclusters with different particle sizes were obtained. The average particle diameter increased with increased precursor concentration and decreased with increased dose. This is due to the competition between nucleation, growth, and aggregation processes in the formation of nanoclusters during irradiation.

  12. Growth and characterisation of potentiostatically electrodeposited Cu2O and Cu thin films

    International Nuclear Information System (INIS)

    Wijesundera, R.P.; Hidaka, M.; Koga, K.; Sakai, M.; Siripala, W.

    2006-01-01

    Cuprous oxide and copper thin films were potentiostatically electrodeposited in an acetate bath. Voltammetric curves were used to investigate the growth parameters; deposition potential, pH and temperature of the bath. Deposition potential dependency on the structural, morphological, optical and electronic properties of the films were investigated by the X-ray diffraction measurements, scanning electron micrographs, absorption measurements and dark and light current-voltage characterisations. It was observed that single phase polycrystalline Cu 2 O can be deposited from 0 to - 300 mV Vs saturated calomel electrode (SCE) and co-deposition of Cu and Cu 2 O starts at - 400 mV Vs SCE. Further increase in deposition potential from - 700 mV Vs SCE produces single phase Cu thin films. Single phase polycrystalline Cu 2 O thin films with cubic grains of 1-2 μm can be possible within the very narrow potential domain around - 200 mV Vs SCE. Enhanced photoresponse in a photoelectrochemical cell is produced by the Cu 2 O thin film prepared at - 400 mV Vs SCE, where Cu is co-deposited with Cu 2 O with random distribution of Cu spheres on the Cu 2 O surface. This study reveals that a single deposition bath can be used to deposit both Cu and Cu 2 O separately and an admixture of Cu-Cu 2 O by controlling the deposition parameters

  13. Effects of fluoride residue on thermal stability in Cu/porous low-k interconnects

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, Y.; Ozaki, S.; Nakamura, T. [FUJITSU LABORATORIES Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197 (Japan)

    2014-06-19

    We have investigated the effects of fluoride residue on the thermal stability of a Cu/barrier metal (BM)/porous low-k film (k < 2.3) structure. We confirmed that the Cu agglomerated more on a BM/inter layer dielectric (ILD) with a fluoride residue. To consider the effect of fluoride residue on Cu agglomeration, the structural state at the Cu/BM interface was evaluated with a cross-section transmission electron microscope (TEM) and atomic force microscope (AFM). In addition, the chemical bonding state at the Cu/BM interface was evaluated with the interface peeling-off method and X-ray photoelectron spectroscopy (XPS). Moreover, we confirmed the ionization of fluoride residue and oxidation of Cu with fluoride and moisture to clarify the effect of fluoride residue on Cu. Our experimental results indicated that the thermal stability in Cu/porous low-k interconnects was degraded by enhancement of Cu oxidation with fluoride ions diffusion as an oxidizing catalyst.

  14. Spectroscopic study of the CuO chains in YBa2Cu3O7-x

    International Nuclear Information System (INIS)

    Edwards, H.; Derro, D.J.; Barr, A.L.; Markert, J.T.; de Lozanne, A.L.

    1996-01-01

    We interpret our previously published results obtained using a technique called current-imaging tunneling spectroscopy (CITS) to study the detailed electronic structure of the CuO chains in the high-temperature superconductor YBa 2 Cu 3 O 7-x near the Fermi level. Our CITS data comprise sequences of 32 simultaneously obtained images taken at bias voltages ranging from -78 to 72 mV. Cross sections of the CITS data, normalized-conductance analysis, and logarithmic-derivative analysis allow us to examine in detail the behavior of electronic modulations along the CuO chains and the energy gap in the CuO chains of YBa 2 Cu 3 O 7-x . This new analysis lends a strong foundation to our previous interpretation of the CITS data [H. L. Edwards et al., Phys. Rev. Lett. 75, 1387 (1995)]. copyright 1996 American Vacuum Society

  15. Role of dopants in LiF:Mg,Cu, LiF:Mg,P and LiF:Mg,Cu,P detectors

    International Nuclear Information System (INIS)

    Mohammadi, Kh.; Moussavi Zarandi, A.; Afarideh, H.; Shahmaleki, S.

    2013-01-01

    In this study, electronic structure of LiF crystal doped with Mg,Cu,P impurities was studied with WIEN2k code on the basis of FPLAPW+lo method. Results show that in Mg-doped LiF composition, an electronic trap was created with impurity concentration of 1.56% and 3.125%. In this condition, the electronic trap with increasing the percentage of the impurities up to 4.687% is annihilated. It was found, that by doping of Mg and Cu or P simultaneously, a hole-trap is created in valence band. It was realized that in LiF:Mg,Cu, LiF:Mg,P and LiF:Mg,Cu,P, Cu impurity and Li atom, have a key role in creation of levels which lead to create electronic and hole traps. Mg impurity and F atom, only have a role in creation of electronic traps. In addition, P impurity has a main role in creation of the electronic and hole traps in LiF:Mg,Cu,P. The activation energy of electronic and hole trap in LiF:Mg,Cu, LiF:Mg,P and LiF:Mg,Cu,P crystalline lattice were obtained as 0.3 and 5.5 eV, 0.92 and 3.4 eV and 0.75 and 3.1 eV, respectively. - Graphical abstract: Figure (a) and (b) shows changes in electronic structure and band gap energy of LiF crystal due to presence of Mg and Cu, Mg and P ions respectively. - Highlights: • Electronic structure of LiF, LiF:Mg,Cu, LiF:Mg,P and LiF:Mg,Cu,P materials were studied with WIEN2K code. • In LiF:Mg,Cu and LiF:Mg,Cu,P, Li atom and Cu impurity have a key role in creation of levels. • F atom and Mg impurity only have a role in creation of electronic traps. • In LiF:Mg,Cu,P, P impurity has a main role in creation of electronic and hole traps

  16. Synthesis of Cu/Cu2O nanoparticles by laser ablation in deionized water and their annealing transformation into CuO nanoparticles

    KAUST Repository

    Gondal, M. A.; Qahtan, Talal F.; Dastageer, Mohamed Abdulkader; Maganda, Yasin W.; Anjum, Dalaver H.

    2013-01-01

    Nano-structured Cupric Oxide (CuO) has been synthesized using pulsed laser ablation of pure copper in water using Q-switched pulsed laser beam of 532 nm wavelength and, 5 nanosecond pulse duration and laser pulse energy of 100 mJ/pulse. In the initial unannealed colloidal suspension, the nanoparticles of Copper (Cu) and Cuprious oxide (Cu2O) were identified. Further the suspension was dried and annealed at different temperatures and we noticed the product (Cu/Cu2O) was converted predominantly into CuO at annealing temperature of 300 'C for 3 hours. As the annealing temperature was raised from 300 to 900 'C, the grain sizes of CuO reduced to the range of 9 to 26 nm. The structure and the morphology of the prepared samples were investigated using X-ray diffraction and Transmission Electron Microscope. Photoluminescence and UV absorption spectrometrystudies revealed that the band gap and other optical properties of nano-structured CuO were changed due to post annealing. Fourier transform spectrometry also confirmed the transformation of Cu/Cu2O into CuO. Copyright © 2013 American Scientific Publishers All rights reserved.

  17. Synthesis of Cu/Cu2O nanoparticles by laser ablation in deionized water and their annealing transformation into CuO nanoparticles

    KAUST Repository

    Gondal, M. A.

    2013-08-01

    Nano-structured Cupric Oxide (CuO) has been synthesized using pulsed laser ablation of pure copper in water using Q-switched pulsed laser beam of 532 nm wavelength and, 5 nanosecond pulse duration and laser pulse energy of 100 mJ/pulse. In the initial unannealed colloidal suspension, the nanoparticles of Copper (Cu) and Cuprious oxide (Cu2O) were identified. Further the suspension was dried and annealed at different temperatures and we noticed the product (Cu/Cu2O) was converted predominantly into CuO at annealing temperature of 300 \\'C for 3 hours. As the annealing temperature was raised from 300 to 900 \\'C, the grain sizes of CuO reduced to the range of 9 to 26 nm. The structure and the morphology of the prepared samples were investigated using X-ray diffraction and Transmission Electron Microscope. Photoluminescence and UV absorption spectrometrystudies revealed that the band gap and other optical properties of nano-structured CuO were changed due to post annealing. Fourier transform spectrometry also confirmed the transformation of Cu/Cu2O into CuO. Copyright © 2013 American Scientific Publishers All rights reserved.

  18. Cu retention in an acid soil amended with perlite winery waste.

    Science.gov (United States)

    Rodríguez-Salgado, Isabel; Pérez-Rodríguez, Paula; Gómez-Armesto, Antía; Nóvoa-Muñoz, Juan Carlos; Arias-Estévez, Manuel; Fernández-Calviño, David

    2016-02-01

    The effect of perlite waste from a winery on general soil characteristics and Cu adsorption was assessed. The studied soil was amended with different perlite waste concentrations corresponding to 10, 20, 40 and 80 Mg ha(-1). General soil characteristics and Cu adsorption and desorption curves were determined after different incubation times (from 1 day to 8 months). The addition of perlite waste to the soil increased the amounts of organic matter as well as soil nutrients such as phosphorus and potassium, and these increments were stable with time. An increase in Cu adsorption capacity was also detected in the perlite waste-amended soils. The effect of perlite waste addition to the soil had special relevance on its Cu adsorption capacity at low coverage concentrations and on the energy of the soil-Cu bonds.

  19. Silicon waveguides produced by wafer bonding

    DEFF Research Database (Denmark)

    Poulsen, Mette; Jensen, Flemming; Bunk, Oliver

    2005-01-01

    X-ray waveguides are successfully produced employing standard silicon technology of UV photolithography and wafer bonding. Contrary to theoretical expectations for similar systems even 100 mu m broad guides of less than 80 nm height do not collapse and can be used as one dimensional waveguides...

  20. Understanding the fast phase-change mechanism of tetrahedrally bonded Cu2GeTe3 : Comprehensive analyses of electronic structure and transport phenomena

    Science.gov (United States)

    Kobayashi, Keisuke; Skelton, Jonathan M.; Saito, Yuta; Shindo, Satoshi; Kobata, Masaaki; Fons, Paul; Kolobov, Alexander V.; Elliott, Stephen; Ando, Daisuke; Sutou, Yuji

    2018-05-01

    Cu2GeTe3 (CGT) phase-change material, a promising candidate for advanced fast nonvolatile random-access-memory devices, has a chalcopyritelike structure with s p3 bonding in the crystalline phase; thus, the phase-change (PC) mechanism is considered to be essentially different from that of the standard PC materials (e.g., Ge-Sb-Te) with threefold to sixfold p -like bonding. In order to reveal the PC mechanism of CGT, the electronic structure change due to PC has been investigated by laboratory hard x-ray photoelectron spectroscopy and combined first-principles density-functional theory molecular-dynamics simulations. The valence-band spectra, in both crystalline and amorphous phases, are well simulated by the calculations. An inherent tendency of Te 5 s lone-pair formation and an enhanced participation of Cu 3 d orbitals in the bonding are found to play dominant roles in the PC mechanism. The electrical conductivity of as-deposited films and its change during the PC process is investigated in connection with valence-band spectral changes near the Fermi level. The results are successfully analyzed, based on a model proposed by Davis and Mott for chalcogenide amorphous semiconductors. The results suggest that robustness of the defect-band states against thermal stress is a key to the practical application of this material for memory devices.

  1. High spin states in 62Cu

    International Nuclear Information System (INIS)

    Tsan Ung Chan; Agard, M.; Bruandet, J.F.; Giorni, A.; Glasser, F.; Longequeue, J.P.; Morand, C.

    1977-06-01

    The 62 Cu nucleus has been studied via the reactions 60 Ni(α,pnγ), 63 Cu(p,pnγ), 52 Cr( 14 N,2p2nγ) using different in beam γ-spectroscopy techniques. The intensity of the principal γ-lines observed in different reactions leading to the 62 Cu has been compared. A brief discussion is made in terms of the independent particle model. A level scheme including levels with spin up to 9 + is proposed [fr

  2. Electromigration in 3D-IC scale Cu/Sn/Cu solder joints

    Energy Technology Data Exchange (ETDEWEB)

    Ho, Cheng-En, E-mail: ceho1975@hotmail.com; Lee, Pei-Tzu; Chen, Chih-Nan; Yang, Cheng-Hsien

    2016-08-15

    The electromigration effect on the three-dimensional integrated circuits (3D-IC) scale solder joints with a Cu/Sn(25–50 μm)/Cu configuration was investigated using a field-emission scanning electron microscope (FE–SEM) combined with electron backscatter diffraction (EBSD) analysis system. Electron current stressing for a few days caused the pronounced accumulation of Cu{sub 6}Sn{sub 5} in specific Sn grain boundaries (GBs). The EBSD analysis indicated that both the β-Sn crystallographic orientation and GB orientation play dominant roles in this accumulation. The dependencies of the Cu{sub 6}Sn{sub 5} accumulation on the two above factors (i.e., Sn grain orientation and GB orientation) can be well rationalized via a proposed mathematic model based on the Huntington and Grone's electromigration theory with the Cu anisotropic diffusion data in a β-Sn lattice. - Highlights: • Anisotropic Cu electromigration in the 3D-IC scale microelectronic solder joints. • Pronounced accumulation of Cu{sub 6}Sn{sub 5} intermetallic in specific Sn grain boundaries. • A linear dependence of Cu{sub 6}Sn{sub 5} accumulation over the current stressing time. • β-Sn and grain boundary orientations are the dominant factors in Cu{sub 6}Sn{sub 5} accumulation.

  3. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    1998-01-01

    Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

  4. Effects of Al addition on atomic structure of Cu-Zr metallic glass

    Science.gov (United States)

    Li, Feng; Zhang, Huajian; Liu, Xiongjun; Dong, Yuecheng; Yu, Chunyan; Lu, Zhaoping

    2018-02-01

    The atomic structures of Cu52Zr48 and Cu45Zr48Al7 metallic glasses (MGs) have been studied by molecular dynamic simulations. The results reveal that the molar volume of the Cu45Zr48Al7 MG is smaller than that of the Cu52Zr48 MG, although the size of the Al atom is larger than that of the Cu atom, implying an enhanced atomic packing density achieved by introducing Al into the ternary MG. Bond shortening in unlike atomic pairs Zr-Al and Cu-Al is observed in the Cu45Zr48Al7 MG, which is attributed to strong interactions between Al and (Zr, Cu) atoms. Meanwhile, the atomic packing efficiency is enhanced by the minor addition of Al. Compared with the Cu52Zr48 binary MG, the potential energy of the ternary MG decreases and the glass transition temperature increases. Structural analyses indicate that more Cu- and Al-centered full icosahedral clusters emerge in the Cu45Zr48Al7 MG as some Cu atoms are substituted by Al. Furthermore, the addition of Al leads to more icosahedral medium-range orders in the ternary MG. The increase of full icosahedral clusters and the enhancement of the packing density are responsible for the improved glass-forming ability of Cu45Zr48Al7.

  5. Wafer-level packaging with compression-controlled seal ring bonding

    Science.gov (United States)

    Farino, Anthony J

    2013-11-05

    A device may be provided in a sealed package by aligning a seal ring provided on a first surface of a first semiconductor wafer in opposing relationship with a seal ring that is provided on a second surface of a second semiconductor wafer and surrounds a portion of the second wafer that contains the device. Forcible movement of the first and second wafer surfaces toward one another compresses the first and second seal rings against one another. A physical barrier against the movement, other than the first and second seal rings, is provided between the first and second wafer surfaces.

  6. Changes in serum selenium, copper, zinc levels and cu/zn ratio in patients with pulmonary tuberculosis during therapy.

    Science.gov (United States)

    Ciftci, T Ulukavak; Ciftci, B; Yis, O; Guney, Y; Bilgihan, A; Ogretensoy, M

    2003-10-01

    The effectiveness and success of antituberculosis therapy is mainly measured by its ability to identify the organism in the sputum. In certain cases, available tuberculosis tests are not satisfactory and do not provide enough information on the effectiveness of antituberculosis therapy. Copper (Cu), zinc (Zn), and selenium (Se) are the essential elements that play a crucial role in the immune system. The serum levels of these elements vary in many diseases including tuberculosis. In this study, we investigate whether the serum levels of Cu, Zn, and Se change during antituberculosis therapy. We have included 22 pulmonary tuberculosis cases that were newly diagnosed with positive sputum and 18 healthy subjects. At the beginning and 2 mo after therapy, serum levels of Cu, Zn, and Se were measured by atomic absorption spectrometry. Despite Se and Cu levels not being affected during the treatment, we found that there was a significant increase in the levels of Zn and a decrease in the Cu/Zn ratio. Serum Zn levels and the Cu/Zn ratio could be used as a valuable laboratory tool for the clinicians to assess response to therapy or effectiveness of the ongoing antituberculosis therapy.

  7. Effect of 67Cu and 99Mo labeled tetrathiomolybdate on the distribution of 67Cu, Cu, and 99Mo in bile fractions in sheep

    International Nuclear Information System (INIS)

    Gooneratne, R.; Laarveld, B.; Christensen, D.

    1989-01-01

    The effect of intravenous administration of 67 Cu and 99 Mo labeled tetrathiomolybdate (TTM) on the appearance of 67 Cu, stable Cu, and 99 Mo in gel chromatographic fractions of bile was examined in sheep fed either 5 or 35 mg Cu kg-1 DM. Peak excretory periods of biliary 67 Cu, stable Cu, and 99 Mo were observed at 30 min-1.25 hr, 2-3 hr, and 11-13 hr after 67 Cu and after 99 Mo labeled TTM. Sephadex G-75 gel filtration of bile samples collected at 1, 3, and 12 hr after 67 Cu administration revealed two major protein peaks of molecular weights of greater than 80,000 (peak I) and 7,000 (peak II) containing both 67 Cu and Cu. But the ratio of 67 Cu in the two peaks varied with time of bile collection. The ratio of areas of peak I:II 1 hr after 67 Cu administration was approximately 0.48; at 3 hr, 0.62, and at 12 hr 1.35. Tetrathiomolybdate administration increased both 67 Cu and stable Cu in bile by severalfold and induced a major shift of Cu into the higher molecular weight protein fraction. The experiments confirm the effectiveness of TTM as a ''decoppering'' agent. Furthermore, TTM not only promoted bile Cu excretion, but it also increased the incorporation of Cu into the macromolecular fraction. This may limit enterohepatic circulation of biliary Cu and thereby cause an overall Cu depletion and a negative Cu balance

  8. Eutectic and solid-state wafer bonding of silicon with gold

    International Nuclear Information System (INIS)

    Abouie, Maryam; Liu, Qi; Ivey, Douglas G.

    2012-01-01

    Highlights: ► Eutectic and solid-state Au-Si bonding are compared for both a-Si and c-Si samples. ► Exchange of a-Si and Au layer was observed in both types of bonded samples. ► Use of c-Si for bonding resulted in formation of craters at the Au/c-Si interface. ► Solid-state Au-Si bonding produces better bonds in terms of microstructure. - Abstract: The simple Au-Si eutectic, which melts at 363 °C, can be used to bond Si wafers. However, faceted craters can form at the Au/Si interface as a result of anisotropic and non-uniform reaction between Au and crystalline silicon (c-Si). These craters may adversely affect active devices on the wafers. Two possible solutions to this problem were investigated in this study. One solution was to use an amorphous silicon layer (a-Si) that was deposited on the c-Si substrate to bond with the Au. The other solution was to use solid-state bonding instead of eutectic bonding, and the wafers were bonded at a temperature (350 °C) below the Au-Si eutectic temperature. The results showed that the a-Si layer prevented the formation of craters and solid-state bonding not only required a lower bonding temperature than eutectic bonding, but also prevented spill out of the solder resulting in strong bonds with high shear strength in comparison with eutectic bonding. Using amorphous silicon, the maximum shear strength for the solid-state Au-Si bond reached 15.2 MPa, whereas for the eutectic Au-Si bond it was 13.2 MPa.

  9. Cyclic heat load testing of improved CFC/Cu bonding for the W 7-X divertor targets

    International Nuclear Information System (INIS)

    Greuner, H.; Boeswirth, B.; Boscary, J.; Chaudhuri, P.; Schlosser, J.; Friedrich, T.; Plankensteiner, A.; Tivey, R.

    2009-01-01

    Extensive high heat flux cycling testing of pre-series targets was performed in the neutral beam facility GLADIS to establish the industrial process for the manufacturing of 890 targets, which will be needed for the installation of the WENDELSTEIN 7-X divertor. The targets are manufactured of flat tiles of CFC NB31 as plasma facing material bonded by an Active Metal Casting copper interlayer onto a water-cooled CuCrZr structure. Based on the results of the 3D thermo-mechanical FEM analysis of the CFC/Cu interface, an additional set of 17 full-scale pre-series elements including three design variations was manufactured by PLANSEE SE. The insertion of an additional plastically compliant copper interlayer between the cooling structure and the Active Metal Casting interlayer showed the best results. No critical tile detachment was observed during >5000 cycles at 10 MW/m 2 . These results demonstrated the sufficient life time of the component for the expected heat load in operation.

  10. Characterization of Cu-exchanged SSZ-13: a comparative FTIR, UV-Vis, and EPR study with Cu-ZSM-5 and Cu-β with similar Si/Al and Cu/Al ratios

    DEFF Research Database (Denmark)

    Giordanino, Filippo; Vennestrøm, Peter N. R.; Lundegaard, Lars Fahl

    2013-01-01

    concentration of reduced copper centres, i.e. isolated Cu+ ions located in different environments, able to form Cu+(N2), Cu+(CO)n (n = 1, 2, 3), and Cu+(NO)n (n = 1, 2) upon interaction with N2, CO and NO probe molecules, respectively. Low temperature FTIR, DRUV-Vis and EPR analysis on O2 activated samples...... an intense and finely structured d–d quadruplet, unique to Cu-SSZ-13, which is persistent under SCR conditions. This differs from the 22 700 cm−1 band of the mono(μ-oxo)dicopper species of the O2 activated Cu-ZSM-5, which disappears under SCR conditions. The EPR signal intensity sets Cu-β apart from...

  11. Characterization of p-CuI prepared by the SILAR technique on Cu-tape/n-CuInS{sub 2} for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sankapal, B.R. [Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109, Berlin (Germany)]. E-mail: brsankapal@rediffmail.com; Ennaoui, A. [Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109, Berlin (Germany); Guminskaya, T. [Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109, Berlin (Germany); Dittrich, Th. [Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109, Berlin (Germany); Bohne, W. [Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109, Berlin (Germany); Roehrich, J. [Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109, Berlin (Germany); Strub, E. [Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109, Berlin (Germany); Lux-Steiner, M.Ch. [Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109, Berlin (Germany)

    2005-06-01

    CuI has been synthesized at room temperature on Cu-tape/n-CuInS{sub 2} by using the SILAR technique (successive ionic layer adsorption and reaction). The influence of wet chemical iodine treatment on the CuI has been investigated in more detail. The films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), elastic recoil detection analysis (ERDA) and surface photovoltage (SPV) techniques. The CuI films contain the no. gammano. -phase of the Zinkblende structure. The crystallites are preferentially oriented in the (111) direction. After wet chemical iodine treatment, the fibrous surface morphology changed to a more dense CuI film with larger crystallites. Oxides could not be detected on the CuI surface. The density of surface states of CIS decreased after the CuI deposition. The importance of the wet chemical iodine treatment for the performance of Cu-tape/n-CuInS{sub 2}/p-CuI solar cells has been demonstrated.

  12. Direct Observation of Reduction of Cu(II) to Cu(I) by Terminal Alkynes

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Guanghui; Yi, Hong; Zhang, Guoting; Deng, Yi; Bai, Ruopeng; Zhang, Heng; Miller, Jeffrey T.; Kropf, Arthur J.; Bunel, Emilio E.; Lei, Aiwen

    2014-01-06

    ABSTRACT: X-ray absorption spectroscopy and in situ electron paramagnetic resonance evidence were provided for the reduction of Cu(II) to Cu(I) species by alkynes in the presence of tetramethylethylenediamine (TMEDA), in which TMEDA plays dual roles as both ligand and base. The structures of the starting Cu(II) species and the obtained Cu(I) species were determined as (TMEDA)- CuCl2 and [(TMEDA)CuCl]2 dimer, respectively.

  13. New Production Routes for Medical Isotopes 64Cu and 67Cu Using Accelerator Neutrons

    Science.gov (United States)

    Kin, Tadahiro; Nagai, Yasuki; Iwamoto, Nobuyuki; Minato, Futoshi; Iwamoto, Osamu; Hatsukawa, Yuichi; Segawa, Mariko; Harada, Hideo; Konno, Chikara; Ochiai, Kentaro; Takakura, Kosuke

    2013-03-01

    We have measured the activation cross sections producing 64Cu and 67Cu, promising medical radioisotopes for molecular imaging and radioimmunotherapy, by bombarding a natural zinc sample with 14 MeV neutrons. We estimated the production yields of 64Cu and 67Cu by fast neutrons from \\text{natC(d,n) with 40 MeV 5 mA deuterons. We used the present result together with the evaluated cross section of Zn isotopes. The calculated 64Cu yield is 1.8 TBq (175 g 64Zn) for 12 h of irradiation; the yields of 67Cu by 67Zn(n,p)67Cu and 68Zn(n,x)67Cu were 249 GBq (184 g 67Zn) and 287 GBq (186 g 68Zn) at the end of 2 days of irradiation, respectively. From the results, we proposed a new route to produce 67Cu with very little radionuclide impurity via the 68Zn(n,x)67Cu reaction, and showed the 64Zn(n,p)64Cu reaction to be a promising route to produce 64Cu. Both 67Cu and 64Cu are noted to be produced using fast neutrons.

  14. The influence of dietary Cu and diabetes on tissue 67Cu retention kinetics in rats

    International Nuclear Information System (INIS)

    Uriu-Hare, J.Y.; Rucker, R.B.; Keen, C.L.

    1991-01-01

    Compared to controls, diabetes results in higher plasma, liver and kidney Cu concentrations. Since alterations in Cu metabolism may be associated with diabetic pathology, the authors investigated how Cu metabolism is affected by diabetes and dietary Cu intake. Nondiabetic and STZ diabetic rats were fed Cu suppl. or Cu def. diets for 5 wks. Rats were intubated with 28 μCi 67 Cu and killed after 8, 16, 24, 32, 64, or 128 h. There were marked effects of both diet and diabetes on 67 Cu metabolism. Independent of diabetes, deficient rats had a higher % of retained 67 Cu, in liver, plasma, RBC, muscle, spleen, brain, lung, uterus, and intestine than adequate Cu rats. Independent of dietary Cu, diabetic rats had a lower % of retained 67 Cu in liver, plasma, RBC, muscle, spleen, lung, bone, pancreas, skin, uterus and heart than controls. Differential effects were noted for kidney; adequate Cu diabetic rats had a higher % of retained 67 Cu than all other groups. Marked effects of both diet and diabetes were evident when tissue Cu turnover was examined. Compared to Cu suppl. rats, Cu def. rats had a slower turnover of 67 Cu, in liver, plasma, intestine, pancreas, eye, brain, muscle, spleen, lung and heart. Diabetic rats had a slower turnover of 67 Cu than nondiabetic rats in liver, plasma, intestine, pancreas, eye, kidney, RBC and uterus. The data imply that a focus on Cu metabolism with regard to cellular Cu trafficking and pathology may be warranted

  15. Pt/Cu single-atom alloys as coke-resistant catalysts for efficient C-H activation

    Science.gov (United States)

    Marcinkowski, Matthew D.; Darby, Matthew T.; Liu, Jilei; Wimble, Joshua M.; Lucci, Felicia R.; Lee, Sungsik; Michaelides, Angelos; Flytzani-Stephanopoulos, Maria; Stamatakis, Michail; Sykes, E. Charles H.

    2018-03-01

    The recent availability of shale gas has led to a renewed interest in C-H bond activation as the first step towards the synthesis of fuels and fine chemicals. Heterogeneous catalysts based on Ni and Pt can perform this chemistry, but deactivate easily due to coke formation. Cu-based catalysts are not practical due to high C-H activation barriers, but their weaker binding to adsorbates offers resilience to coking. Using Pt/Cu single-atom alloys (SAAs), we examine C-H activation in a number of systems including methyl groups, methane and butane using a combination of simulations, surface science and catalysis studies. We find that Pt/Cu SAAs activate C-H bonds more efficiently than Cu, are stable for days under realistic operating conditions, and avoid the problem of coking typically encountered with Pt. Pt/Cu SAAs therefore offer a new approach to coke-resistant C-H activation chemistry, with the added economic benefit that the precious metal is diluted at the atomic limit.

  16. Pt/Cu single-atom alloys as coke-resistant catalysts for efficient C–H activation

    Energy Technology Data Exchange (ETDEWEB)

    Marcinkowski, Matthew D.; Darby, Matthew T.; Liu, Jilei; Wimble, Joshua M.; Lucci, Felicia R.; Lee, Sungsik; Michaelides, Angelos; Flytzani-Stephanopoulos, Maria; Stamatakis, Michail; Sykes, E. Charles H.

    2018-01-08

    The recent availability of shale gas has led to a renewed interest in C-H bond activation as the first step towards synthesis of fuels and fine chemicals. Heterogeneous catalysts based on Ni and Pt can perform this chemistry, but deactivate easily due to coke formation. Cu- based catalysts are not practical for this chemistry due to high C-H activation barriers, but their weaker binding to adsorbates offers resilience to coking. Utilizing Pt/Cu single atom alloys (SAAs) we examine C-H activation in a number of systems including methyl groups, methane, and butane using a combination of simulations, surface science, and catalysis studies. We find that Pt/Cu SAAs activate C-H bonds more efficiently than Cu, are stable for days under realistic operating conditions, and avoid the problem of coking typically encountered with Pt. Pt/Cu SAAs therefore offer a new approach to coke resistant C-H activation chemistry with the added economic benefit that the precious metal is diluted at the atomic limit.

  17. Evaluation of [64Cu]Cu-DOTA and [64Cu]Cu-CB-TE2A Chelates for Targeted Positron Emission Tomography with an αvβ6-Specific Peptide

    Directory of Open Access Journals (Sweden)

    Sven H. Hausner

    2009-03-01

    Full Text Available Significant upregulation of the integrin αvβ6 has been described as a prognostic indicator in several cancers, making it an attractive target for tumor imaging. This study compares variants of a PEGylated αvβ6-targeting peptide, bearing either an [>18F]fluorobenzoyl prosthetic group ([18F]FBA-PEG-A20FMDV2 or different [64Cu]copper chelators (DOTA-PEG-A20FMDV2, CB-TE2A-PEG-A20FMDV2. The compounds were evaluated in vitro by enzyme-linked immunosorbent assay (against the integrin αvβ6 and the closely related integrin αvβ6 and by cell labeling (αvβ6-positive DX3puroβ6/αvβ6-negative DX3puro and in vivo using micro-positron emission tomography in a mouse model bearing paired DX3puroβ6/Dx3puro xenografts. In vitro, all three compounds showed excellent αvβ6-specific binding (50% inhibitory concentration [IC50](αvβ6 = 3 to g nmol/L; IC50(αvβ3 > 10 (μmol/L. In vivo, they displayed comparable, preferential uptake for the αvβ6-expressmg xenograft over the αvβ6-negative control (> 4:1 ratio at 4 hours postinjection. Whereas [64Cu]Cu-DOTA-PEG-A20FMDV2 resulted in increased levels of radioactivity in the liver, [64Cu]Cu-CB-TE2A-PEG-A20FMDV2 did not. Significantly, both 64Cu-labeled tracers showed unexpectedly high and persistent levels of radioactivity in the kidneys (> 40% injected dose/g at 4 and 12 hours postinjection. The findings underscore the potential influence of the prosthetic group on targeted in vivo imaging of clinically relevant markers such as αvβ6. Despite identical targeting peptide moiety and largely equal in vitro behavior, both 64Cu-labeled tracers displayed inferior pharmacokinetics, making them in their present form less suitable candidates than the 18F-labeled tracer for in vivo imaging of αvβ6

  18. Copper interactions in TlCu7S4 and TlCu7Se4

    International Nuclear Information System (INIS)

    Noren, L.; Delaplane, R.G.; Berger, R.

    1999-01-01

    Complete text of publication follows. The copper chalcogenides ACu 7 S 4 (A=NH 4 + , Tl + , Rb + ) are quasi-one-dimensional metals at ambient and higher temperatures which is due to the high mobility of copper in these structures. TlCu 7 S 4 and TlCu 7 Se 4 are isostructural compounds, space group I4/m, which can be described on the basis of a TlX 8 cube with two different Cu sites, Cu(1) and Cu(2). Cu(2)-Cu(2) zigzag chains run along the c axis with only 3/4 occupation of the Cu(2) sites. However, these two compounds differ in behaviour on cooling. The sulphide shows a polymorphic first-order transition to the CsAg 7 S 4 type (P4/n) owing to ordering of the vacancies in the Cu(2)-Cu(2) chains. In order to study the nature of the Cu(2) order/disorder in the two title compounds, a series of neutron diffraction measurements (both Bragg and diffuse scattering) were made at several temperatures from 40 to 713 K on the instrument SLAD at Studsvik. The structure at each temperature was modelled using RMC techniques. The resulting configuration show that as the temperature increases, there is a marked increase in the mobility of the Cu atoms in the Cu(2)-Cu(2) chains for TlCu 7 S 4 but not for TlCu 7 Se 4 . This is due to the initial difference in the Cu(2)-Cu(2) distances, only 2.2A for the thiocuprate, but 2.7A in the selenocuprate which explains the relative ease for Cu(2) ordering in the latter case. (author)

  19. Behavior of CuP and OFHC Cu anodes under electrodeposition conditions

    Energy Technology Data Exchange (ETDEWEB)

    Frankel, G.S.; Schrott, A.G.; Horkans, J.; Andricacos, P.C. (International Business Machines Corp., Yorktown Heights, NY (United States). Thomas J. Watson Research Center); Isaacs, H.S. (Brookhaven National Lab., Upton, NY (United States))

    1992-01-01

    Films formed on CuP (with 0.05 wt % P) and OFHC Cu anodes in electroplating solutions were studied by X-ray Photoelectron Spectroscopy, X-ray Absorption Spectroscopy, electrochemical methods, and a newly developed gravimetric technique. The black film formed on CuP in Cl-containing solutions was found to resemble a porous sponge composed of CuCl but laden/with concentrated CuSO{sub 4} solution. The difference between the buoyancy-corrected measured mass change and the charge-equivalent mass change was found to have two components: a reversible part that comes and goes as the current is turned on and off, and an irreversible part that remains on the surface and increase in mass with time. The irreversible part results from the anodic film, which increases linearly with charge density but independent of current density. The reversible part of the mass change arises from the weight of the diffusion layer. In contrast to CuP, OFHC Cu releases much more Cu{sup +1} during anodic polarization and forms a poorly-adherent anodic film that is considerably heavier than the black film for a given charge density.

  20. Behavior of CuP and OFHC Cu anodes under electrodeposition conditions

    Energy Technology Data Exchange (ETDEWEB)

    Frankel, G.S.; Schrott, A.G.; Horkans, J.; Andricacos, P.C. [International Business Machines Corp., Yorktown Heights, NY (United States). Thomas J. Watson Research Center; Isaacs, H.S. [Brookhaven National Lab., Upton, NY (United States)

    1992-08-01

    Films formed on CuP (with 0.05 wt % P) and OFHC Cu anodes in electroplating solutions were studied by X-ray Photoelectron Spectroscopy, X-ray Absorption Spectroscopy, electrochemical methods, and a newly developed gravimetric technique. The black film formed on CuP in Cl-containing solutions was found to resemble a porous sponge composed of CuCl but laden/with concentrated CuSO{sub 4} solution. The difference between the buoyancy-corrected measured mass change and the charge-equivalent mass change was found to have two components: a reversible part that comes and goes as the current is turned on and off, and an irreversible part that remains on the surface and increase in mass with time. The irreversible part results from the anodic film, which increases linearly with charge density but independent of current density. The reversible part of the mass change arises from the weight of the diffusion layer. In contrast to CuP, OFHC Cu releases much more Cu{sup +1} during anodic polarization and forms a poorly-adherent anodic film that is considerably heavier than the black film for a given charge density.

  1. CuGaTe2-CuAlTe2 system

    International Nuclear Information System (INIS)

    Bodnar', I.V.

    2003-01-01

    The results of studies on the chemical interaction in the CuGaTe 2 -CuAlTe 2 as well as on the thermal and optical properties of the formed solid solutions are presented. It is shown, that continuous number of solid solutions are formed in the CuGaTe 2 -CuAlTe 2 system, which crystallize in the chalcopyrite structure. The diagram of state of this system is plotted. The thermal expansion of these materials is studied through the dilatometric method. The linear dependence of the thermal expansion coefficient on the composition is established. The concentration dependences of the forbidden zone width diverge from the linearity [ru

  2. The effect of inducing uniform Cu growth on formation of electroless Cu seed layer

    International Nuclear Information System (INIS)

    Lim, Taeho; Kim, Myung Jun; Park, Kyung Ju; Kim, Kwang Hwan; Choe, Seunghoe; Lee, Young-Soo; Kim, Jae Jeong

    2014-01-01

    The uniformity of Cu growth on Pd nanocatalysts was controlled by using organic additives in the formation of electroless Cu seed layers. Polyethylene glycol (PEG, Mw. 8000) not only reduced the deposition rate but also improved the uniformity of Cu growth on each Pd nanocatalyst during the seed layer formation. The stronger suppression effect of PEG on Cu than on Pd reduced the difference in the deposition rate between the two surfaces, resulting in the uniform deposition. Meanwhile, bis(3-sulfopropyl) disulfide degraded the uniformity by strong and nonselective suppression. The sheet resistance measurement and atomic force microscopy imaging revealed that the uniform Cu growth by PEG was more advantageous for the formation of a thin and smooth Cu seed layer than the non-uniform growth. The uniform Cu growth also had a positive influence on the subsequent Cu electrodeposition: the 60-nm-thick electrodeposited Cu film on the Cu seed layer showed low resistivity (2.70 μΩ·cm), low surface roughness (6.98 nm), and good adhesion strength. - Highlights: • Uniform Cu growth on Pd was achieved in formation of electroless Cu seed layer. • PEG addition to electroless bath improved the uniformity of Cu growth on Pd. • A thin, smooth and continuous Cu seed layer was obtained with PEG. • Adhesion strength of the Cu seed layer was also improved with PEG. • The uniformity improvement positively affected subsequent Cu electrodeposition

  3. Colloidal synthesis of Cu-ZnO and Cu@CuNi-ZnO hybrid nanocrystals with controlled morphologies and multifunctional properties

    Science.gov (United States)

    Zeng, Deqian; Gong, Pingyun; Chen, Yuanzhi; Zhang, Qinfu; Xie, Qingshui; Peng, Dong-Liang

    2016-06-01

    Metal-semiconductor hybrid nanocrystals have received extensive attention owing to their multiple functionalities which can find wide technological applications. The utilization of low-cost non-noble metals to construct novel metal-semiconductor hybrid nanocrystals is important and meaningful for their large-scale applications. In this study, a facile solution approach is developed for the synthesis of Cu-ZnO hybrid nanocrystals with well-controlled morphologies, including nanomultipods, core-shell nanoparticles, nanopyramids and core-shell nanowires. In the synthetic strategy, Cu nanocrystals formed in situ serve as seeds for the heterogeneous nucleation and growth of ZnO, and it eventually forms various Cu-ZnO hetero-nanostructures under different reaction conditions. These hybrid nanocrystals possess well-defined and stable heterostructure junctions. The ultraviolet-visible-near infrared spectra reveal morphology-dependent surface plasmon resonance absorption of Cu and the band gap absorption of ZnO. Furthermore, we construct a novel Cu@CuNi-ZnO ternary hetero-nanostructure by incorporating the magnetic metal Ni into the pre-synthesized colloidal Cu nanocrystals. Such hybrid nanocrystals possess a magnetic Cu-Ni intermediate layer between the ZnO shell and the Cu core, and exhibit ferromagnetic/superparamagnetic properties which expand their functionalities. Finally, enhanced photocatalytic activities are observed in the as-prepared non-noble metal-ZnO hybrid nanocrystals. This study not only provides an economical way to prepare high-quality morphology-controlled Cu-ZnO hybrid nanocrystals for potential applications in the fields of photocatalysis and photovoltaic devices, but also opens up new opportunities in designing ternary non-noble metal-semiconductor hybrid nanocrystals with multifunctionalities.Metal-semiconductor hybrid nanocrystals have received extensive attention owing to their multiple functionalities which can find wide technological applications

  4. Study on the effects of fluorine and oxygen deficiency on YBa2Cu3O7 by ab initio method

    Institute of Scientific and Technical Information of China (English)

    刘洪霖; 曹晓卫; 瞿丽曼; 陈念贻

    1997-01-01

    The calculations of clusters modeling the fluorine-doping and oxygen deficiency of YBa2Cu3O2,have been performed by the method of all-electron ab initio Hartree-Fock with self-consistent crystal field Results show that in CuO planes electric charge significantly increases,the chemical valence of Cu decreases and the covalent bonding of Cu-O greatly weakens owing to oxygen deficiency,while the effect of F restores the local electronic structure of YBa2Cu3O7 The reported opinion that F occupied the oxygen vacancy in Cu-O chains seems disputable according to the calculated bonding characteristics.

  5. Research Progress on Carbon Nanotubes Reinforced Cu-matrix Composites

    Directory of Open Access Journals (Sweden)

    TAO Jing-mei

    2017-04-01

    Full Text Available The critical issues of CNTs/Cu composites were reviewed. The preparation techniques of the composites were classified, and the research progress on powder metallurgic methods, electrochemical methods and other methods was summarized, with an emphasis on the relationship between preparation methods and properties. The interfacial characteristic of the CNTs/Cu composites was analyzed, and the research progress and existing problems of mechanical properties, electrical properties, thermal properties and wear and friction properties of the composites were also summarized. It was pointed out that the key to increase the comprehensive properties of the composites is to obtain the homogeneous distribution of CNTs and good interfacial bonding between CNTs and the Cu matrix by improving the preparation methods.

  6. Study of Paramagnetic Species in γ-irradiated Lithium Borate Glasses Doped With Cu2+ Ions

    International Nuclear Information System (INIS)

    Mansour, A.; Abd-Allah, W.M.; El-Alaily, N.A.; Ezz-Eldin, F.M.

    2013-01-01

    Mixed alkali borate glasses doped with different concentration of Cu O ranging from (0.1-10) wt% have been prepared by the melt quenching technique. The prepared samples were studied by means of density, molar volume, infrared spectroscopy and electron paramagnetic resonance (EPR) measurements before and after successive gamma irradiation (50-200 kGy). The results showed that the density increase while molar volume decrease with the increase of CuO %. The infrared absorption studies revealed that structure of the glass network consists of BO 3 , BO 4 and B-O-Cu linkages. Gamma irradiation causes minor changes in the IR spectral bands which are related to the bond break of the B-O bond and formation non-bridging oxygen. Gamma irradiation causes irregular change in the intensities of the EPR spectra for samples doped with 0.1, 0.2 and 10 wt % of Cu O, however, no change in the EPR spectra of 2 and 5 wt % of Cu O for all absorbed doses (50-200 kGy). It is expected that the Cu-doped lithium borate glass 2 and 5 wt % of Cu O may be used for radiation shielding.

  7. Positive XPS binding energy shift of supported Cu{sub N}-clusters governed by initial state effects

    Energy Technology Data Exchange (ETDEWEB)

    Peters, S.; Peredkov, S. [Technische Universität Berlin, IOAP, Strasse des 17. Juni 135, 10623 Berlin (Germany); Al-Hada, M. [Department of Physics, College of Education and Linguistics, University of Amran (Yemen); Neeb, M., E-mail: matthias.neeb@helmholtz-berlin.de [Helmholtz-Zentrum Berlin, Wilhelm-Conrad-Röntgen-Campus Adlershof, Elektronenspeicherring BESSY II, Albert-Einstein-Straße 15, 12489 Berlin (Germany); Eberhardt, W. [Technische Universität Berlin, IOAP, Strasse des 17. Juni 135, 10623 Berlin (Germany); DESY, Center for Free Electron Laser Science (CFEL), Notkestr. 85, 22607 Hamburg (Germany)

    2014-01-01

    Highlights: • Size dependent initial and final state effects of mass-selected deposited clusters. • Initial state effect dominates positive XPS shift in supported Cu-clusters. • Size dependent Coulomb correlation shift in the Auger final state of Cu cluster. • Size-dependent Auger parameter analysis. • Positive XPS shift differs from negative surface core level shift in crystalline copper. - Abstract: An initial state effect is established as origin for the positive 2p core electron binding energy shift found for Cu{sub N}-clusters supported by a thin silica layer of a p-doped Si(1 0 0) wafer. Using the concept of the Auger parameter and taking into account the usually neglected Coulomb correlation shift in the Auger final state (M{sub 4,5}M{sub 4,5}) it is shown that the initial state shift is comparable to the measured XPS shift while the final state relaxation shift contributes only marginally to the binding energy shift. The cluster results differ from the negative surface core-level shift of crystalline copper which has been explained in terms of a final state relaxation effect.

  8. Subcellular differences in handling Cu excess in three freshwater fish species contributes greatly to their differences in sensitivity to Cu

    International Nuclear Information System (INIS)

    Eyckmans, Marleen; Blust, Ronny; De Boeck, Gudrun

    2012-01-01

    Since changes in metal distribution among tissues and subcellular fractions can provide insights in metal toxicity and tolerance, we investigated this partitioning of Cu in gill and liver tissue of rainbow trout (Oncorhynchus mykiss), common carp (Cyprinus carpio) and gibel carp (Carassius auratus gibelio). These fish species are known to differ in their sensitivity to Cu exposure with gibel carp being the most tolerant and rainbow trout the most sensitive. After an exposure to 50 μg/l (0.79 μM) Cu for 24 h, 3 days, 1 week and 1 month, gills and liver of control and exposed fish were submitted to a differential centrifugation procedure. Interestingly, there was a difference in accumulated Cu in the three fish species, even in control fishes. Where the liver of rainbow trout showed extremely high Cu concentrations under control conditions, the amount of Cu accumulated in their gills was much less than in common and gibel carp. At the subcellular level, the gills of rainbow trout appeared to distribute the additional Cu exclusively in the biologically active metal pool (BAM; contains heat-denaturable fraction and organelle fraction). A similar response could be seen in gill tissue of common carp, although the percentage of Cu in the BAM of common carp was lower compared to rainbow trout. Gill tissue of gibel carp accumulated more Cu in the biologically inactive metal pool (BIM compared to BAM; contains heat-stable fraction and metal-rich granule fraction). The liver of rainbow trout seemed much more adequate in handling the excess Cu (compared to its gills), since the storage of Cu in the BIM increased. Furthermore, the high % of Cu in the metal-rich granule fraction and heat-stable fraction in the liver of common carp and especially gibel carp together with the better Cu handling in gill tissue, pointed out the ability of the carp species to minimize the disadvantages related to Cu stress. The differences in Cu distribution at the subcellular level of gills and

  9. Subcellular differences in handling Cu excess in three freshwater fish species contributes greatly to their differences in sensitivity to Cu

    Energy Technology Data Exchange (ETDEWEB)

    Eyckmans, Marleen, E-mail: marleen.eyckmans@ua.ac.be [Laboratory for Ecophysiology, Biochemistry and Toxicology, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp (Belgium); Blust, Ronny; De Boeck, Gudrun [Laboratory for Ecophysiology, Biochemistry and Toxicology, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp (Belgium)

    2012-08-15

    Since changes in metal distribution among tissues and subcellular fractions can provide insights in metal toxicity and tolerance, we investigated this partitioning of Cu in gill and liver tissue of rainbow trout (Oncorhynchus mykiss), common carp (Cyprinus carpio) and gibel carp (Carassius auratus gibelio). These fish species are known to differ in their sensitivity to Cu exposure with gibel carp being the most tolerant and rainbow trout the most sensitive. After an exposure to 50 {mu}g/l (0.79 {mu}M) Cu for 24 h, 3 days, 1 week and 1 month, gills and liver of control and exposed fish were submitted to a differential centrifugation procedure. Interestingly, there was a difference in accumulated Cu in the three fish species, even in control fishes. Where the liver of rainbow trout showed extremely high Cu concentrations under control conditions, the amount of Cu accumulated in their gills was much less than in common and gibel carp. At the subcellular level, the gills of rainbow trout appeared to distribute the additional Cu exclusively in the biologically active metal pool (BAM; contains heat-denaturable fraction and organelle fraction). A similar response could be seen in gill tissue of common carp, although the percentage of Cu in the BAM of common carp was lower compared to rainbow trout. Gill tissue of gibel carp accumulated more Cu in the biologically inactive metal pool (BIM compared to BAM; contains heat-stable fraction and metal-rich granule fraction). The liver of rainbow trout seemed much more adequate in handling the excess Cu (compared to its gills), since the storage of Cu in the BIM increased. Furthermore, the high % of Cu in the metal-rich granule fraction and heat-stable fraction in the liver of common carp and especially gibel carp together with the better Cu handling in gill tissue, pointed out the ability of the carp species to minimize the disadvantages related to Cu stress. The differences in Cu distribution at the subcellular level of gills

  10. Phase relationships in Cu-rich corner of the Cu-Cr-Zr phase diagram

    International Nuclear Information System (INIS)

    Zeng, K.J.; Haemaelaeinen, M.; Lilius, K.

    1995-01-01

    In the available experimental information on the Cu-Cr-Zr ternary system, there exist different opinions concerning the phase relationships in the Cu-rich corner of Cu-Cr-Zr phase diagram. Glazov et al. and Zakharov et al. investigated the Cu-rich corner of the Cu-Cr-Zr phase diagram within the composition range up to 3.5 Cr and 3.5 Zr (wt. %). A quasi-eutectic reaction L → (Cu) + αCr 2 Zr was observed to occur at 1,020 C and several isothermal sections were constructed within the temperature range from 600 to 1,000 C to show the (Cu)-αCr 2 Zr two phase equilibrium. Therefore, a pseudobinary Cu-Cr 2 Zr system was supposed. Afterwards, Dawakatsu et al, Fedorov et al, and Kuznetsov et al studied the cu-rich corner of the phase diagram in a wider composition range up to 5 Cr and 20 Zr (at.%). Contrary to Glazov et al. and Zakharov et al., they found no Cr 2 Zr phase in their samples. Hence, the pseudobinary Cu-Cr 2 Zr system does not exist. In this study an experimental investigation is presented on the phase relationships in Cu-rich corner of the Cu-Cr-Zr phase diagram at 940 C in order to clear up the confusion

  11. Hydrodynamic evolution and jet energy loss in Cu + Cu collisions

    International Nuclear Information System (INIS)

    Schenke, Bjoern; Jeon, Sangyong; Gale, Charles

    2011-01-01

    We present results from a hybrid description of Cu + Cu collisions using (3 + 1)-dimensional hydrodynamics (music) for the bulk evolution and a Monte Carlo simulation (martini) for the evolution of high-momentum partons in the hydrodynamical background. We explore the limits of this description by going to small system sizes and determine the dependence on different fractions of wounded nucleon and binary collisions scaling of the initial energy density. We find that Cu + Cu collisions are well described by the hybrid description at least up to 20% central collisions.

  12. Massive spalling of Cu-Zn and Cu-Al intermetallic compounds at the interface between solders and Cu substrate during liquid state reaction

    Science.gov (United States)

    Kotadia, H. R.; Panneerselvam, A.; Mokhtari, O.; Green, M. A.; Mannan, S. H.

    2012-04-01

    The interfacial intermetallic compound (IMC) formation between Cu substrate and Sn-3.8Ag-0.7Cu-X (wt.%) solder alloys has been studied, where X consists of 0-5% Zn or 0-2% Al. The study has focused on the effect of solder volume as well as the Zn or Al concentration. With low solder volume, when the Zn and Al concentrations in the solder are also low, the initial Cu-Zn and Al-Cu IMC layers, which form at the solder/substrate interface, are not stable and spall off, displaced by a Cu6Sn5 IMC layer. As the total Zn or Al content in the system increases by increasing solder volume, stable CuZn or Al2Cu IMCs form on the substrate and are not displaced. Increasing concentration of Zn has a similar effect of stabilizing the Cu-Zn IMC layer and also of forming a stable Cu5Zn8 layer, but increasing Al concentration alone does not prevent spalling of Al2Cu. These results are explained using a combination of thermodynamic- and kinetics-based arguments.

  13. Cu and Cu-Based Nanoparticles: Synthesis and Applications in Catalysis.

    Science.gov (United States)

    Gawande, Manoj B; Goswami, Anandarup; Felpin, François-Xavier; Asefa, Tewodros; Huang, Xiaoxi; Silva, Rafael; Zou, Xiaoxin; Zboril, Radek; Varma, Rajender S

    2016-03-23

    The applications of copper (Cu) and Cu-based nanoparticles, which are based on the earth-abundant and inexpensive copper metal, have generated a great deal of interest in recent years, especially in the field of catalysis. The possible modification of the chemical and physical properties of these nanoparticles using different synthetic strategies and conditions and/or via postsynthetic chemical treatments has been largely responsible for the rapid growth of interest in these nanomaterials and their applications in catalysis. In addition, the design and development of novel support and/or multimetallic systems (e.g., alloys, etc.) has also made significant contributions to the field. In this comprehensive review, we report different synthetic approaches to Cu and Cu-based nanoparticles (metallic copper, copper oxides, and hybrid copper nanostructures) and copper nanoparticles immobilized into or supported on various support materials (SiO2, magnetic support materials, etc.), along with their applications in catalysis. The synthesis part discusses numerous preparative protocols for Cu and Cu-based nanoparticles, whereas the application sections describe their utility as catalysts, including electrocatalysis, photocatalysis, and gas-phase catalysis. We believe this critical appraisal will provide necessary background information to further advance the applications of Cu-based nanostructured materials in catalysis.

  14. Changes in urinary Cu, Zn, and Se levels in cancer patients after treatment with Sha Shen Mai Men Dong Tang

    Directory of Open Access Journals (Sweden)

    Tung-Yuan Lai

    2016-04-01

    Full Text Available Sha Shen Mai Men Dong Tang (SMD-2; 沙參麥冬湯 shā shēn mài dōng tāng is a Chinese medicinal herb (CMH; 中草藥 zhōng cǎo yào used to treat symptoms associated with cancer therapy. The objective of this study was to assess the effect of SMD-2 on the levels of urinary copper (Cu, zinc (Zn, and selenium (Se in lung cancer patients and head and neck cancer patients receiving chemoradiotherapy. Forty-two head and neck cancer patients and 10 lung cancer patients participated in our clinical trial. Each patient received chemoradiotherapy for 4 weeks. In addition, each patient was treated with SMD-2 for 8 weeks, including 2 weeks prior to and after the chemoradiotherapy treatment. Comparison of urinary Cu, Zn, and Se levels and the ratios of Zn to Cu and Se to Cu at three time points in the two types of cancer were assessed using the generalized estimating equations (GEEs. After the patients received chemoradiotherapy for 4 weeks, SMD-2 treatment was found to be associated with a significant decrease in urinary Cu levels, whereas urinary Zn and Se levels increased significantly. In addition, the ratios of Zn to Cu and Se to Cu in the urine samples of these patients also increased significantly. Both the urinary Zn levels and the ratio of Zn to Cu in head and neck cancer patients were significantly higher than in lung cancer patients. Urinary Zn and Se levels and the ratios of Zn to Cu and Se to Cu, but not urinary Cu levels, increased significantly during and after treatment when assessed using the GEE model. The SMD-2 treatments significantly increased Zn and Se levels in the urine of head and neck cancer patients. Increased Zn and Se levels in urine strengthened immune system.

  15. Cu uptake and turnover in both Cu-acclimated and non-acclimated rainbow trout (Oncorhynchus mykiss)

    DEFF Research Database (Denmark)

    Grosell, M.; Hogstrand, C.; Wood, C.M.

    1997-01-01

    -acclimation clearly involves changes in copper accumulation kinetics in the plasma. The acclimated fish showed a 65% reduced Cu-64 accumulation after 65 h and an increased turnover of Cu in the plasma compared to the non-acclimated fish. Total Cu in the plasma increased by 59% after 3 h of exposure in the non...... aortic catheter. By measuring both Cu-64 accumulation and total Cu concentrations, we were able to analyse the ongoing uptake and turnover of ambient Cu, independent of any Cu already present in the fish. Plasma accounted for at least 90% of the Cu-64 labelled Cu present in the blood and Cu...... h of exposure. Acclimation did not have an unambiguous effect on branchial Cu uptake and differences in branchial uptake could not explain the reduced accumulation in the plasma. The rapidly exchangeable Cu pools were 54% in the gills and 33% in the liver, suggesting a considerable hepatic Cu...

  16. The complex structure of liquid Cu{sub 6}Sn{sub 5} alloy

    Energy Technology Data Exchange (ETDEWEB)

    Qin Jingyu; Gu Tingkun; Bian Xiufang [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Southern Campus, Jinan 250061 (China); Liu Hui [Shandong High Performance Computing Center, Shandong University, Southern Campus, Jinan 250061 (China)

    2009-04-15

    By applying ab initio molecular dynamics simulation to liquid Cu{sub 6}Sn{sub 5} alloy, the hetero-coordination tendency is discovered by Bathia-Thornton partial correlation functions and a chemical short-range parameter. However the local structural environment of Sn in l-Cu{sub 6}Sn{sub 5} alloy resembles that of liquid Sn by Voronoi analysis. A new feature, i.e. a subpeak in between the first and second peaks, is discovered by the present method which implies that topologically disordered {beta}-Sn-type structural units may exist in l-Cu{sub 6}Sn{sub 5} alloy. The local density states of electrons show that both Cu-Sn and Sn-Sn bonding exist in l-Cu{sub 6}Sn{sub 5} alloy. This work suggests that chemical short-range order between unlike atoms and self-coordination between Sn atoms coexists in l-Cu{sub 6}Sn{sub 5} alloy.

  17. Reliable four-point flexion test and model for die-to-wafer direct bonding

    Energy Technology Data Exchange (ETDEWEB)

    Tabata, T., E-mail: toshiyuki.tabata@cea.fr; Sanchez, L.; Fournel, F.; Moriceau, H. [Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble (France)

    2015-07-07

    For many years, wafer-to-wafer (W2W) direct bonding has been very developed particularly in terms of bonding energy measurement and bonding mechanism comprehension. Nowadays, die-to-wafer (D2W) direct bonding has gained significant attention, for instance, in photonics and microelectro-mechanics, which supposes controlled and reliable fabrication processes. So, whatever the stuck materials may be, it is not obvious whether bonded D2W structures have the same bonding strength as bonded W2W ones, because of possible edge effects of dies. For that reason, it has been strongly required to develop a bonding energy measurement technique which is suitable for D2W structures. In this paper, both D2W- and W2W-type standard SiO{sub 2}-to-SiO{sub 2} direct bonding samples are fabricated from the same full-wafer bonding. Modifications of the four-point flexion test (4PT) technique and applications for measuring D2W direct bonding energies are reported. Thus, the comparison between the modified 4PT and the double-cantilever beam techniques is drawn, also considering possible impacts of the conditions of measures such as the water stress corrosion at the debonding interface and the friction error at the loading contact points. Finally, reliability of a modified technique and a new model established for measuring D2W direct bonding energies is demonstrated.

  18. DFT studies of the effectiveness of p-substituted diphenyl amine antioxidants in styrene-butadiene rubber through their Cu(II) coordination ability

    Science.gov (United States)

    Puškárová, Ingrid; Breza, Martin

    2017-07-01

    Structures of a series of diphenyl amine (DPA) antioxidants and of their complexes with Cu2+ were optimized at B3LYP level of theory. DPAs may be divided into two groups according to their molar antioxidant effectiveness (AEM). The effectiveness of high-AEM DPA antioxidants at 130 °C rises with decreasing spin densities at Cu atoms and with the increasing electron density Laplacian at Cu-N bond critical points in the 2[DPA…Cu]2+ complexes similarly as in the case of p-phenylene diamine antioxidants. No such trends are observed at 25 °C and for low- AEM DPA antioxidants.

  19. Microstructural characterization and compression properties of TiC0.61/Cu(Al) composite synthesized from Cu and Ti3AlC2 powders

    International Nuclear Information System (INIS)

    Huang, Zhenying; Bonneville, Joel; Zhai, Hongxiang; Gauthier-Brunet, Veronique

    2014-01-01

    Highlights: • Submicro-layered TiC 0.61 /Cu(Al) nanocomposite. • MAX phase. • High yield stress. • Deformation mechanism. - Abstract: A new submicro-layered TiC 0.61 /Cu(Al) composite has been prepared by hot-pressing a mixture of 50 vol.% Ti 3 AlC 2 and 50 vol.% Cu powders at 1150 °C and 30 MPa. It is shown that the initial reinforcement Ti 3 AlC 2 particles have, after synthesis, an unusual microstructure, which consists of submicron-thick layers of TiC 0.61 and Cu(Al) alloy. Both the width of the TiC 0.61 and Cu(Al) layers are ∼150 nm. Thus, the Ti 3 AlC 2 particles are decomposed into the TiC 0.61 phase, while the additional Al atoms provided by Ti 3 AlC 2 diffuse into the molten Cu matrix at high temperature. Compression tests were performed at constant strain rate in the temperature range 20–800 °C. The new designed TiC 0.61 /Cu(Al) composite has both a high yield stress, σ 0.2 measured at 0.2% strain offset, and a high ultimate compressive strength, σ UCS , which is attributed to strong interface bonding between TiC 0.61 and Cu(Al) phase. For instance, at 20 and 200 °C, σ 0.2 is 770 MPa and 700 MPa, while σ UCS is 1.18 GPa and 1 GPa, respectively. Plastic deformation takes place in the Cu(Al) matrix. Wavy slip lines are observed indicating that cross-slip could be the dominant deformation mechanism

  20. Bimetallic AgCu/Cu2O hybrid for the synergetic adsorption of iodide from solution.

    Science.gov (United States)

    Mao, Ping; Liu, Ying; Liu, Xiaodong; Wang, Yuechan; Liang, Jie; Zhou, Qihang; Dai, Yuexuan; Jiao, Yan; Chen, Shouwen; Yang, Yi

    2017-08-01

    To further improve the capacity of Cu 2 O to absorb I - anions from solution, and to understand the difference between the adsorption mechanisms of Ag/Cu 2 O and Cu/Cu 2 O adsorbents, bimetallic AgCu was doped into Cu 2 O through a facile solvothermal route. Samples were characterized and employed to adsorb I - anions under different experimental conditions. The results show that the Cu content can be tuned by adding different volumes of Ag sols. After doping bimetallic AgCu, the adsorption capacity of the samples can be increased from 0.02 mmol g -1 to 0.52 mmol g -1 . Moreover, the optimal adsorption is reached within only 240 min. Meanwhile, the difference between the adsorption mechanisms of Ag/Cu 2 O and Cu/Cu 2 O adsorbents was verified, and the cooperative adsorption mechanism of the AgCu/Cu 2 O hybrid was proposed and verified. In addition, the AgCu/Cu 2 O hybrid showed excellent selectivity, e.g., its adsorption efficiencies are 85.1%, 81.9%, 85.9% and 85.7% in the presence of the Cl - , CO 3 2- , SO 4 2- and NO 3 - competitive anions, respectively. Furthermore, the AgCu/Cu 2 O hybrid can worked well in other harsh environments (e.g., acidic, alkaline and seawater environments). Therefore, this study is expected to promote the development of Cu 2 O into a highly efficient adsorbent for the removal of iodide from solution. Copyright © 2017 Elsevier Ltd. All rights reserved.

  1. Detection of trace contamination of copper on a silicon wafer with TXRF

    International Nuclear Information System (INIS)

    Yamada, T.; Matsuo, M.; Kohno, H.; Mori, Y.

    2000-01-01

    The element copper on silicon wafers is one of the most important metals to be detected among the contamination in semiconductor industries. When W-Lβ 1 (9.67 keV) line is used for the excitation in TXRF instrument and when Si(Li) is used as its detector, an escape peak appears at 7.93 keV which is close to the energy of Cu-Kα line(8.04 keV). When the concentration of copper is lower than 10 10 atoms/cm 2 , accurate quantitative analysis is difficult because of the overlapping of the peaks. When Au-Lβ 1 line(11.44 keV) is used for the excitation, the escape peak appears at 9.70 keV which is far enough from the energy of Cu-Ka line. We prepared silicon wafers intentionally contaminated with copper in a low concentration range of 10 8 to 10 10 atoms/cm 2 and measured them with a TXRF instrument having Au-Lβ 1 line for excitation. The contaminated samples were made with IAP method and their Cu concentrations were calibrated with VPD-AAS method (recovery solution: 2 % HF + 2 % H 2 O 2 ). A figure shows the correlation between the results with TXRF and those with AAS. The horizontal axis is the value of concentration decided by AAS and the vertical axis is the intensity of Cu-Kα line measured with the TXRF. Six wafers of different concentration were used and five points on each wafer including the center were measured with TXRF. Five points at each concentration in the figure correspond to the results measured on one wafer. Intensities of Cu-Kα line are weak in these low concentration ranges but the background of them are also very small (less than 0.05 cps). Therefore the peak of Cu-Kα line can be distinguished from the background. It can be said that a calibration curve can be drawn to the middle range of 10 9 atoms/cm 2 . The same samples were measured with another TXRF instrument having W-Lβ 1 line for excitation. It was difficult to draw a calibration curve in this case. We will present both results taken with Au-Lβ 1 line and with W-Lβ 1 line. (author)

  2. Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substrates

    International Nuclear Information System (INIS)

    De Los Santos Valladares, L.; Salinas, D. Hurtado; Dominguez, A. Bustamante; Najarro, D. Acosta; Khondaker, S.I.; Mitrelias, T.; Barnes, C.H.W.; Aguiar, J. Albino; Majima, Y.

    2012-01-01

    In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO 2 /Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 °C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution CuCu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO was detected. Pure Cu 2 O films are obtained at 200 °C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300–550 °C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current–voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: ► The crystallization and electrical resistivity of oxides in a Cu films are studied. ► In annealing Cu films, the phase evolution Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO occurs. ► A resistivity phase diagram, obtained from the current–voltage response, is presented. ► Some decreases in the resistivity may be related to the crystallization.

  3. Adsorption and desorption of Cu2+ on paddy soil aggregates pretreated with different levels of phosphate.

    Science.gov (United States)

    Dai, Jun; Wang, Wenqin; Wu, Wenchen; Gao, Jianbo; Dong, Changxun

    2017-05-01

    Interactions between anions and cations are important for understanding the behaviors of chemical pollutants and their potential risks in the environment. Here we prepared soil aggregates of a yellow paddy soil from the Taihu Lake region, and investigated the effects of phosphate (P) pretreatment on adsorption-desorption of Cu 2+ of soil aggregates, free iron oxyhydrates-removed soil aggregates, goethite, and kaolinite with batch adsorption method. The results showed that Cu 2+ adsorption was reduced on the aggregates pretreated with low concentrations of P, and promoted with high concentrations of P, showing a V-shaped change. Compared with the untreated aggregates, the adsorption capacity of Cu 2+ was reduced when P application rates were lower than 260, 220, 130 and 110mg/kg for coarse, clay, silt and fine sand fractions, respectively. On the contrary, the adsorption capacity of Cu 2+ was higher on P-pretreated soil aggregates than on the control ones when P application rates were greater than those values. However, the desorption of Cu 2+ was enhanced at low levels of P, but suppressed at high levels of P, displaying an inverted V-shaped change over P adsorption. The Cu 2+ adsorption by the aggregate particles with and without P pretreatments was well described by the Freundlich equation. Similar results were obtained on P-pretreated goethite. However, such P effects on Cu 2+ adsorption-desorption were not observed on kaolinite and free iron oxyhydrates-removed soil aggregates. The present results indicate that goethite is one of the main soil substances responsible for the P-induced promotion and inhibition of Cu 2+ adsorption. Copyright © 2016. Published by Elsevier B.V.

  4. Approaching the limit of Cu(II)/Cu(I) mixed valency in a Cu(I)Br2-N-methylquinoxalinium hybrid compound.

    Science.gov (United States)

    Leblanc, Nicolas; Sproules, Stephen; Pasquier, Claude; Auban-Senzier, Pascale; Raffy, Helene; Powell, Annie K

    2015-08-18

    A novel 1D hybrid salt (MQ)[CuBr2]∞ (MQ = N-methylquinoxalinium) is reported. Structural, spectroscopic and magnetic investigations reveal a minimal Cu(II) doping of less than 0.1%. However it is not possible to distinguish Cu(I) and Cu(II). The unusually close packing of the organic moieties and the dark brown colour of the crystals suggest a defect electronic structure.

  5. Manufacturing and testing of W/Cu mono-block small scale mock-up for EAST by HIP and HRP technologies

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qiang [Institute of Plasma Physics, Chinese Academy of Sciences (ASIPP), Hefei, Anhui (China); Qin, Sigui [Advanced Technology and Materials Co., Ltd, Beijing (China); Wang, Wanjing; Qi, Pan [Institute of Plasma Physics, Chinese Academy of Sciences (ASIPP), Hefei, Anhui (China); Roccella, Selanna; Visca, Eliseo [Associazione EURATOM-ENEA sulla Fusione, Frascati (Italy); Liu, Guohui [Advanced Technology and Materials Co., Ltd, Beijing (China); Luo, Guang-Nan, E-mail: liqiang577@ipp.ac.cn [Institute of Plasma Physics, Chinese Academy of Sciences (ASIPP), Hefei, Anhui (China)

    2013-10-15

    ITER-like W/Cu mono-block plasma-facing components (PFCs) will be used in vertical target regions of the experimental advanced superconducting tokamak (EAST) divertor. The first W/Cu mono-block small scale mock-up with five W mono-blocks has been manufactured successfully by technological combination of hot isostatic pressing (HIP) and hot radial pressing (HRP). The joining of a W mono-block and a pure copper interlayer was achieved by means of HIP technology and the bonding strength was over 150 MPa. The good bonding between the pure copper interlayer and a CuCrZr cooling tube was obtained by means of HRP technology. In order to understand deeply the process of HRP, the stress distribution of the mock-up during HRP process was simulated using ANSYS code. Ultrasonic Nondestructive Testing (NDT) of the W/Cu and Cu/CuCrZr interfaces was performed, showing that excellent bonding of the W/Cu and Cu/CuCrZr interfaces. The thermal cycle fatigue testing of the mock-up has been carried out by means of an e-beam device in Southwest Institute of Physics, Chengdu (SWIP) and the mock-up withstood 1000 cycles of heat loads up to 8.4 MW/m{sup 2} with the cooling water of 2 m/s, 20 °C, 0.2 MPa.

  6. Nucleation and Growth of Cu-Al Intermetallics in Al-Modified Sn-Cu and Sn-Ag-Cu Lead-Free Solder Alloys

    Science.gov (United States)

    Reeve, Kathlene N.; Anderson, Iver E.; Handwerker, Carol A.

    2015-03-01

    Lead-free solder alloys Sn-Cu (SC) and Sn-Ag-Cu (SAC) are widely used by the microelectronics industry, but enhanced control of the microstructure is needed to improve solder performance. For such control, nucleation and stability of Cu-Al intermetallic compound (IMC) solidification catalysts were investigated by variation of the Cu (0.7-3.0 wt.%) and Al (0.0-0.4 wt.%) content of SC + Al and SAC + Al alloys, and of SAC + Al ball-grid array (BGA) solder joints. All of the Al-modified alloys produced Cu-Al IMC particles with different morphologies and phases (occasionally non-equilibrium phases). A trend of increasing Cu-Al IMC volume fraction with increasing Al content was established. Because of solidification of non-equilibrium phases in wire alloy structures, differential scanning calorimetry (DSC) experiments revealed delayed, non-equilibrium melting at high temperatures related to quenched-in Cu-Al phases; a final liquidus of 960-1200°C was recorded. During cooling from 1200°C, the DSC samples had the solidification behavior expected from thermodynamic equilibrium calculations. Solidification of the ternary alloys commenced with formation of ternary β and Cu-Al δ phases at 450-550°C; this was followed by β-Sn, and, finally, Cu6Sn5 and Cu-Al γ1. Because of the presence of the retained, high-temperature phases in the alloys, particle size and volume fraction of the room temperature Cu-Al IMC phases were observed to increase when the alloy casting temperature was reduced from 1200°C to 800°C, even though both temperatures are above the calculated liquidus temperature of the alloys. Preliminary electron backscatter diffraction results seemed to show Sn grain refinement in the SAC + Al BGA alloy.

  7. Solid state luminescence of CuI and CuNCS complexes with phenanthrolines and a new tris (aminomethyl) phosphine derived from N-methyl-2-phenylethanamine

    International Nuclear Information System (INIS)

    Starosta, Radosław; Komarnicka, Urszula K.; Puchalska, Małgorzata

    2014-01-01

    A new tris (aminomethyl) phosphine derived from N-methyl-2-phenylethanamine P(CH 2 N(CH 3 )CH 2 CH 2 Ph) 3 (1) has been synthesized and characterized by the NMR spectra. Also, three new copper(I) iodide or isothiocyanate complexes with 1 1,10-phenanthroline (phen) and 2,9-dimethyl-1,10-phenanthroline (dmp) [CuI(phen)P(CH 2 N(CH 3 )CH 2 CH 2 Ph) 3 ] (1P) CuI(dmp)P(CH 2 N(CH 3 )CH 2 CH 2 Ph) 3 ] (1I) and [CuNCS(dmp)P(CH 2 N(CH 3 )CH 2 CH 2 Ph) 3 ] (1T), have been synthesized and characterized by elemental analysis as well as studied by NMR, UV–vis, IR and luminescence spectroscopies. An X-ray structure of 1P complex revealed that the geometry around Cu(I) center in this complex is distorted pseudo-tetrahedral. Investigated complexes exhibit orange, rather weak photoluminescence in the solid state. This relatively low intensity may be related to the high flattening deformations of the molecular geometries in the excited triplet states On the basis of TDDFT calculations we confirmed that the absorbance and luminescence bands of (MX,MPR 3 )LCT as well as of (MX)LCT types result mainly from the transitions from the copper–iodine (or isothiocyanate) bonds and a small admixture of copper–phosphine bonds to antibonding orbitals of phen or dmp diimines. -- Highlights: • A novel tris(aminomethyl)phosphine is obtained from N-methyl-2-phenylethanamine. • Three new CuI and CuNCS complexes with phen or dmp and a novel phosphine are presented. • The obtained complexes are luminescent in the solid state. • Main absorbance and luminescence bands are of (MX,MPR 3 )LCT as well as (MX)LCT types

  8. Inelastic Neutron Scattering Cross Sections of Cu-63 and Cu-65 in the Energy Region 0.7 to 1.4 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Holmqvist, B; Wiedling, T

    1964-08-15

    The gamma ray spectra from, the {sup 63}Cu (n, n'{gamma}) and {sup 65}Cu (n, n'{gamma}) reactions have been studied for seven neutron energies in the energy range 0.7 - 1.4 MeV using a Nal(Tl) scintillation spectrometer and time-of-flight techniques. Scatterers of natural copper have been used. Experimental excitation curves have been obtained for the two lowest excited levels in each of the Cu and Cu isotopes. The experimental (n, n') cross sections for the individual levels at 668 keV and 961 keV in {sup 63}Cu and 764 keV and 1114 keV in {sup 65}Cu have been compared to a modified Hauser-Feshbach theory for inelastic neutron scattering. This experiment has confirmed by other methods determined spins of these levels, i.e. 1/2{sup -} and 5/2{sup -} respectively.

  9. High-temperature stability of Au/Pd/Cu and Au/Pd(P)/Cu surface finishes

    Science.gov (United States)

    Ho, C. E.; Hsieh, W. Z.; Lee, P. T.; Huang, Y. H.; Kuo, T. T.

    2018-03-01

    Thermal reliability of Au/Pd/Cu and Au/Pd(4-6 wt.% P)/Cu trilayers in the isothermal annealing at 180 °C were investigated by X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (TOF-SIMS), and transmission electron microscopy (TEM). The pure Pd film possessed a nanocrystalline structure with numerous grain boundaries, thereby facilitating the interdiffusion between Au and Cu. Out-diffusion of Cu through Pd and Au grain boundaries yielded a significant amount of Cu oxides (CuO and Cu2O) over the Au surface and gave rise to void formation in the Cu film. By contrast, the Pd(P) film was amorphous and served as a good diffusion barrier against Cu diffusion. The results of this study indicated that amorphous Pd(P) possessed better oxidation resistance and thermal reliability than crystalline Pd.

  10. Computer simulation of the structure of liquid metal halides RbBr, CuCl, CuBr, CuI, and AgBr

    International Nuclear Information System (INIS)

    Belashchenko, D.K.; Ostrovskij, O.I.

    2003-01-01

    The computerized models of the RbBr, AgBr, CuCl, CuBr and CuI liquid ion systems of 498 ions dimension are simulated at the temperatures of 753-960 K on the basis of the known diffraction data through the BELION algorithm. Good agreement of diffraction and model partial pair correlation functions (PPCF), excluding the PPCF first peaks heights, is obtained in all the cases. The simulation is carried out by the varied ion charges (the atomization energy values, close to the real ones, are obtained by ion charges ±1.00 for the RbBr, ±1.15 for AgBr, ±1.20 for CuCl, ±1.48 for CuBr and ±1.367 for CuI). The noncoulomb contributions in the interparticle potentials are calculated [ru

  11. Syntheses, crystal Structures and electronic Structures of new metal chalcoiodides Bi2CuSe3I and Bi6Cu3S10I

    International Nuclear Information System (INIS)

    Liang, I-Chu; Bilc, Daniel I.; Manoli, Maria; Chang, Wei-Yun; Lin, Wen-Fu; Kyratsi, Theodora; Hsu, Kuei-Fang

    2016-01-01

    Two new metal chalcoiodides were synthesized by solid-state reactions at 400 °C. Crystal Data: Bi 2 CuSe 3 I, 1, monoclinic, C2/m, a=14.243(2) Å, b=4.1937(7) Å, c=14.647(2) Å, β=116.095(2)°, V=785.7(2) Å 3 , and Z=4; Bi 6 Cu 3 S 10 I, 2, orthorhombic, Pnma, a=17.476(2) Å, b=4.0078(4) Å, c=27.391(2) Å, V=1918.5(3) Å 3 , and Z=4. Compound 1 adopts a three-dimensional structure formed by two alternative layers, which consist of BiSe 5 square pyramids, BiSe 4 I 2 octahedra, CuSe 4 tetrahedra, and CuSe 2 I 2 tetrahedra. Compound 2 possesses a new open framework built up of BiS 5 square pyramides, BiS 6 octahedra, BiS 8 polyhedra, and CuS 4 tetrahedra where I − anions are uniquely trapped within the tunnels. Both electronic structures reveal that bismuth and chalcogenide orbitals dominate the bandgaps. The Cu d and I p states contribute to the top of valence bands, in which the distribution of I orbitals may correspond to the relative bonding interactions in 1 and 2. The optical bandgaps determined by the diffuse reflectance spectra are 0.68 eV and 0.72 eV for 1 and 2, respectively. 1 is a p-type semiconductor with high Seebeck coefficients of 460–575 μV/K in the temperature range of 300–425 K. The electrical conductivity is 0.02 S/cm at 425 K for the undoped sample. The thermal conductivity is 0.22 W/mK at 425 K. - Graphical abstract: The hybridization of chalcogenides and iodides produces two new solids Bi2CuSe3I and Bi6Cu3S10I. The I − anions participate in distinct bonding interactions within the two structures and that is consistent with the analyses of density of states. 1 is a p-type semiconductor with an optical bandgap of 0.68 eV, which possesses high Seebeck coefficient and low lattice thermal conductivity in 300–425 K.

  12. Fluorescence Chemosensory Determination of Cu2+ Using a New Rhodamine–Morpholine Conjugate

    Directory of Open Access Journals (Sweden)

    Zeinab Shekari

    2017-09-01

    Full Text Available A new rhodamine-B carbonyl-morpholine derivative (denoted as RECM was prepared by a two-step synthesis procedure. The employed method allowed a lactam ring development of rhodamine-B and ethylenediamine to demonstrate a facile amide bond formation. The obtained RECM was confirmed by 1H NMR, 13C NMR, and mass spectrometry analysis. RECM was formed to detect copper ion (Cu2+ due to its problematic toxicity features in aquatic ecosystems. It showed a high selectivity toward Cu2+ in comparison with some environmentally relevant alkali, alkaline earth, and transition metal cations at 50 µM in acetonitrile. Moreover, non-fluorescent RECM showed fluorescence intensity and UV-Vis absorbance increases in the presence of Cu2+ with high linear dependent coefficients (R2 = 0.964 and R2 = 0.982 respectively as well as a color change from colorless to pink owing to the ring opening of the rhodamine spirolactam form. Binding capability experiments presented a clear 1:1 stoichiometry of RECM–Cu2+ complex with the binding constant (Ka as 2.25 × 104 M−1. The calculation of limits of detection (LOD was 0.21 µM based on the linear regression method, which is below the maximum contaminant level goal (MCLG value of Cu2+ (1.3 ppm equals to 20.46 µM in drinking water. These characteristics make the RECM a promising candidate for the real-time detection of toxic Cu2+ in environmental monitoring applications.

  13. Photocatalytic property and structural stability of CuAl-based layered double hydroxides

    International Nuclear Information System (INIS)

    Lv, Ming; Liu, Haiqiang

    2015-01-01

    Three types of CuMAl layered double hydroxides (LDHs, M=Mg, Zn, Ni) were successfully synthesized by coprecipitation. Powder X-ray diffraction (XRD), inductively coupled plasma atomic emission spectrometry (ICP-AES) and UV–Vis diffuse reflectance spectrum (UV–vis) were used to confirm the formation of as-synthesized solids with good crystal structure. The photocatalytic activity of those LDH materials for CO 2 reduction under visible light was investigated. The experimental results show that CuNiAl-LDHs with narrowest band gap and largest surface areas behave highest efficiency for methanol generation under visible light compared with CuMgAl-LDHs and CuZnAl-LDHs. The CuNiAL-LDH showed high yield for methanol production i.e. 0.210 mmol/g h, which was high efficient. In addition, the influence of the different M 2+ on the structures and stability of the CuMAl-LDHs was also investigated by analyzing the geometric parameters, electronic arrangement, charge populations, hydrogen-bonding, and binding energies by density functional theory (DFT) analysis. The theoretical calculation results show that the chemical stability of LDH materials followed the order of CuMgAl-LDHs>CuZnAl-LDHs>CuNiAl-LDHs, which is just opposite with the photocatalytic activity and band gaps of three materials. - Graphical abstract: The host–guest calculation models and XRD patterns of CuMAl-LDHs: CuMgAl-LDHs (a), CuZnAl-LDHs (b) and CuNiAl-LDHs (c). - Highlights: • Three types of CuMAl layered double hydroxides (LDHs, M=Mg, Zn, Ni) has been synthesized. • CuMgNi shows narrower band gap and more excellent textural properties than other LDHs. • The band gap: CuMgAlNiAl based on result from UV–vis analysis. • CuMgAl shows the highest stability and lowest photocatalytic activity, while CuNiAl just opposite

  14. Cu and Cu2O films with semi-spherical particles grown by electrochemical deposition

    International Nuclear Information System (INIS)

    Zheng, Jin You; Jadhav, Abhijit P.; Song, Guang; Kim, Chang Woo; Kang, Young Soo

    2012-01-01

    Cu and Cu 2 O films can be prepared on indium-doped tin oxide glass substrates by simple electrodeposition in a solution containing 0.1 M Cu(NO 3 ) 2 and 3 M lactic acid at different pH values. At low pH (pH = 1.2), the uniform Cu films were obtained; when pH ≥ 7, the pure Cu 2 O films can be deposited. Especially, at pH = 11, the deposited Cu 2 O films exhibited cubic surface morphology exposing mainly {100} plane; in contrast, the films consisting of semi-spherical particles were obtained when the solution was being stirred for 2 weeks prior to use. The possible growth process and mechanism were comparatively discussed. - Highlights: ► Cu and Cu 2 O films were prepared by facile electrodeposition. ► Electrodeposition was preformed in electrolyte at different pH values. ► Dendritic Cu films were obtained at 1.2 pH with relatively high deposition potential. ► Semi-spherical Cu 2 O films were obtained with solution at 11 pH and stirred for 2 weeks. ► The possible growth mechanism of semi-spherical Cu 2 O films was discussed.

  15. Comparison of trace element contamination levels (Cu, Zn, Fe, Cd ...

    African Journals Online (AJOL)

    Comparison of trace element contamination levels (Cu, Zn, Fe, Cd and Pb) in the soft tissues of the gastropods Tympanotonus fuscatus fuscatus and Tf radula collected in the Ebrié Lagoon (Côte d'Ivoire): Evidence of the risks linked to linked to lead and.

  16. The activation energy for loop growth in Cu and Cu-Ni alloys

    International Nuclear Information System (INIS)

    Barlow, P.; Leffers, T.; Singh, B.N.

    1978-08-01

    The apparent activation energy for the growth of interstitial dislocation loops in copper, Cu-1%Ni, Cu-2%Ni, and Cu-5%Ni during high voltage electron microscope irradiation was determined. The apparent activation energy for loop growth in all these materials can be taken to be 0.34eV+-0.02eV. This value together with the corresponding value of 0.44eV+-0.02eV determined earlier for Cu-10%Ni is discussed with reference to the void growth rates observed in these materials. The apparent activation energy for loop growth in copper (and in Cu-1%Ni that has a void growth rate similar to that in pure copper) is interpreted as twice the vacancy migration energy (indicating that divacancies do not play any significant role). For the materials with higher Ni content (in which the void growth rate is much lower than that in Cu and Cu-1%Ni) the measured apparent activation energy is interpreted to be characteristic of loops positioned fairly close to the foil surface and not of loops in ''bulk material''. From the present results in combination with the earlier results for Cu-10%Ni it is concluded that interstitial trapping is the most likely explanation of the reduced void growth rate in Cu-Ni alloys. (author)

  17. Giant Cu 2p Resonances in CuO Valence-Band Photoemission

    NARCIS (Netherlands)

    Tjeng, L.H.; Chen, C.T.; Ghijsen, J.; Rudolf, P.; Sette, F.

    1991-01-01

    We report the observation of a giant resonance in the Cu 2p resonant-photoemission spectra of CuO. The study allows the unambiguous identification of the local Cu 3d8 configuration in the valence-band photoemission spectrum, providing conclusive evidence for the charge-transfer nature of the

  18. Diffusion of Cu+ in β-phase CuI

    International Nuclear Information System (INIS)

    Johansson, J.X.M.Z.; Skoeld, K.; Joergensen, J.E.

    1992-01-01

    Measurements of ionic diffusion of Cu + in solid CuI in the β-phase is carried out with a non-destructive radioactive tracer technique, utilizing coincidence counting of the annihilation gammas from the positron decay of 64 Cu. The diffusion coefficient and the activation energy for the diffusion are evaluated. The experimental results show distinct diffusion character in the β-phase which differs from those in the γ- and α-phases. The β-phase diffusion properties together with the previous results for γ-and α-phases will provide valuable guidance for MD calculations, in which the diffusion coefficients and activation energies have been overestimated and the γ-β phase transition does not appear. The ionic conductivity of CuI estimated from tracer diffusion results and the Nernst-Einstein relation are compared with values from electro-chemical methods. In all three phases the conductivities obtained from electro-chemical methods are much lower than those calculated from the measured tracer diffusion coefficients. (author). 7 refs.; 4 figs.; 2 tabs

  19. Optical properties of CuCdTeO thin films sputtered from CdTe-CuO composite targets

    Energy Technology Data Exchange (ETDEWEB)

    Mendoza-Galván, A., E-mail: amendoza@qro.cinvestav.mx [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Laboratory of Applied Optics, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Arreola-Jardón, G. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Karlsson, L.H.; Persson, P.O.Å. [Thin Film Physics Division, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Jiménez-Sandoval, S. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico)

    2014-11-28

    The effective complex dielectric function (ε) of Cu and O containing CdTe thin films is reported in the spectral range of 0.05 to 6 eV. The films were fabricated by rf sputtering from targets comprised by a mixture of CdTe and CuO powders with nominal Cu and O concentrations in the range of 2–10 at.%. Low concentration levels improved the crystalline quality of the films. Spectroscopic ellipsometry and transmittance measurements were used to determine ε. The critical point energies E{sub 1}, E{sub 1} + Δ{sub 1}, and E{sub 2} of CdTe are red-shifted with the incorporation of Cu and O. Also, an absorption band is developed in the infrared range which is associated with a mixture of CdTe and low resistivity phases Cu{sub 2−x}Te according to an effective medium analysis. The elemental distribution of the films was mapped by energy dispersive X-ray spectroscopy using scanning transmission electron microscopy. - Highlights: • Incorporation of 2 to 10 at.% of Cu and O atoms in CdTe films • Improved crystalline quality with 2 and 3 at.% of Cu and O • Complex dielectric function of Cu and O containing CdTe thin films • Effective medium modeling of below band-gap absorption.

  20. Soil solution dynamics of Cu and Zn in a Cu- and Zn-polluted soil as influenced by gamma-irradiation and Cu-Zn interaction.

    Science.gov (United States)

    Luo, Y M; Yan, W D; Christie, P

    2001-01-01

    A pot experiment was conducted to study soil solution dynamics of Cu and Zn in a Cu/Zn-polluted soil as influenced by gamma-irradiation and Cu-Zn interaction. A slightly acid sandy loam was amended with Cu and Zn (as nitrates) either singly or in combination (100 mg Cu and 150 mg Zn kg(-1) soil) and was then gamma-irradiated (10 kGy). Unamended and unirradiated controls were included, and spring barley (Hordeum vulgare L. cv. Forrester) was grown for 50 days. Soil solution samples obtained using soil moisture samplers immediately before transplantation and every ten days thereafter were used directly for determination of Cu, Zn, pH and absorbance at 360 nm (A360). Cu and Zn concentrations in the solution of metal-polluted soil changed with time and were affected by gamma-irradiation and metal interaction. gamma-Irradiation raised soil solution Cu substantially but generally decreased soil solution Zn. These trends were consistent with increased dissolved organic matter (A360) and solution pH after gamma-irradiation. Combined addition of Cu and Zn usually gave higher soil solution concentrations of Cu or Zn compared with single addition of Cu or Zn in gamma-irradiated and non-irradiated soils, indicating an interaction between Cu and Zn. Cu would have been organically complexed and consequently maintained a relatively high concentration in the soil solution under higher pH conditions. Zn tends to occur mainly as free ion forms in the soil solution and is therefore sensitive to changes in pH. The extent to which gamma-irradiation and metal interaction affected solubility and bioavailability of Cu and Zn was a function of time during plant growth. Studies on soil solution metal dynamics provide very useful information for understanding metal mobility and bioavailability.

  1. Spin dynamics in CuO and Cu[sub 1[minus][ital x

    Energy Technology Data Exchange (ETDEWEB)

    Carretta, P.; Corti, M.; Rigamonti, A. (Department of Physics Alessandro Volta,' ' University of Pavia, Via Bassi 6, 27100 Pavia (Italy))

    1993-08-01

    [sup 63]Cu nuclear quadrupole resonance (NQR), nuclear antiferromagnetic resonance (AFNMR), and spin-lattice relaxation, as well as [sup 7]Li NMR and relaxation measurements in CuO and in Cu[sub 1[minus][ital x

  2. The mechanism of transition-metal (Cu or Pd)-catalyzed synthesis of benzimidazoles from amidines: theoretical investigation.

    Science.gov (United States)

    Li, Juan; Gu, Honghong; Wu, Caihong; Du, Lijuan

    2014-11-28

    In this study, the Cu(OAc)2- and [PdCl2(PhCN)2]-catalyzed syntheses of benzimidazoles from amidines were theoretically investigated using density functional theory calculations. For the Cu-catalyzed system, our calculations supported a four-step-pathway involving C-H activation of an arene with Cu(II) via concerted metalation-deprotonation (CMD), followed by oxidation of the Cu(II) intermediate and deprotonation of the imino group by Cu(III), and finally reductive elimination from Cu(III). In our calculations, the barriers for the CMD step and the oxidation step are the same. The results are different from the ones reported by Fu et al. in which the whole reaction mechanism includes three steps and the CMD step is rate determining. On the basis of the calculation results for the [PdCl2(PhCN)2]-catalyzed system, C-H bond breaking by CMD occurs first, followed by the rate-determining C-N bond formation and N-H deprotonation. Pd(III) species is not involved in the [PdCl2(PhCN)2]-catalyzed syntheses of benzimidazoles from amidines.

  3. Novel CuCr_2O_4 embedded CuO nanocomposites for efficient photodegradation of organic dyes

    International Nuclear Information System (INIS)

    Mageshwari, K.; Sathyamoorthy, R.; Lee, Jeong Yong; Park, Jinsub

    2015-01-01

    Graphical abstract: - Highlights: • Novel CuO–CuCr_2O_4 nanocomposites synthesized by reflux condensation method. • Methyl orange and methylene blue dye degradation studied under UV light irradiation. • Nanocomposites characterized by XRD, FESEM, TEM, EDX, UV–vis DRS and PL. • CuCr_2O_4 loading effectively enhanced the catalytic activity of CuO. - Abstract: Novel photocatalyst based on CuO–CuCr_2O_4 nanocomposites was synthesized for different Cr"3"+ concentration by reflux condensation method, and their photocatalytic activity was evaluated by monitoring the photodegradation of methyl orange (MO) and methylene blue dyes (MB) under UV light irradiation. Phase evolution by X-ray diffraction showed monoclinic CuO and tetragonal CuCr_2O_4 as the components of the prepared nanocomposites. Morphological analysis by scanning electron microscope and transmission electron microscope revealed that the incorporation of Cr"3"+ in CuO lattice alters the morphology of CuO from microsphere to cluster shape. Photoluminescence spectra of CuO–CuCr_2O_4 nanocomposites exhibited reduced PL emissions compared to pure CuO, indicating the low recombination rate of photogenerated electrons and holes. As expected, the CuCr_2O_4 loaded CuO showed enhanced photocatalytic activity for MO and MB dyes, and the kinetic studies suggest that the degradation follows pseudo-first-order kinetics. The enhanced photocatalytic activity of CuO–CuCr_2O_4 nanocomposites can be attributed to the presence of CuCr_2O_4 as an electron acceptor, which improves the effective charge separation in CuO.

  4. Fabrication of Cu-riched W–Cu composites by combustion synthesis and melt-infiltration in ultrahigh-gravity field

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Pei [Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Guo, Shibin; Liu, Guanghua; Chen, Yixiang [Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Li, Jiangtao, E-mail: ljt0012@vip.sina.com [Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China)

    2013-10-15

    Unadulterated Cu-riched W–Cu composites of W27–Cu73, W34–Cu66, W40–Cu60, W49–Cu51 and W56–Cu44 have been prepared by a novel method called combustion synthesis and melt-infiltration in ultrahigh-gravity field, of which W27–Cu73 and W34–Cu66 showed good ductility and W40–Cu60, W49–Cu51 and W56–Cu44 were brittle. In this technique, Cu melt accompanied with a great amount of heat was produced by thermit reaction and infiltrated into W–Cu powder bed. When the powder bed was Cu-riched powder bed such as W50–Cu50 or W60–Cu40, Cu melt would go through the powder bed, reach the bottom of the graphite crucible and then form a heat dissipation channel. Thus the cooling rate was so fast that the product was mixed up with impurity. The problem can be solved by putting some W powders under W50–Cu50 or W60–Cu40 powder bed to prevent the formation of heat dissipation channel.

  5. N-Heterocyclic carbenes on close-packed coinage metal surfaces: bis-carbene metal adatom bonding scheme of monolayer films on Au, Ag and Cu.

    Science.gov (United States)

    Jiang, Li; Zhang, Bodong; Médard, Guillaume; Seitsonen, Ari Paavo; Haag, Felix; Allegretti, Francesco; Reichert, Joachim; Kuster, Bernhard; Barth, Johannes V; Papageorgiou, Anthoula C

    2017-12-01

    By means of scanning tunnelling microscopy (STM), complementary density functional theory (DFT) and X-ray photoelectron spectroscopy (XPS) we investigate the binding and self-assembly of a saturated molecular layer of model N -heterocyclic carbene (NHC) on Cu(111), Ag(111) and Au(111) surfaces under ultra-high vacuum (UHV) conditions. XPS reveals that at room temperature, coverages up to a monolayer exist, with the molecules engaged in metal carbene bonds. On all three surfaces, we resolve similar arrangements, which can be interpreted only in terms of mononuclear M(NHC) 2 (M = Cu, Ag, Au) complexes, reminiscent of the paired bonding of thiols to surface gold adatoms. Theoretical investigations for the case of Au unravel the charge distribution of a Au(111) surface covered by Au(NHC) 2 and reveal that this is the energetically preferential adsorption configuration.

  6. Facile synthesis of dendritic Cu by electroless reaction of Cu-Al alloys in multiphase solution

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ying; Liang, Shuhua, E-mail: liangxaut@gmail.com; Yang, Qing; Wang, Xianhui

    2016-11-30

    Highlights: • Nano- or micro-scale fractal dendritic copper (FDC) was synthesized by electroless immersing of Cu-Al alloys in CuCl{sub 2} + HCl. • FDC size increases with the increase of Al content in Cu-Al alloys immersed in CuCl{sub 2} + HCl solution. • Nanoscale Cu{sub 2}O was found at the edge of FDC. Nanoporous copper (NPC) can also be obtained by using Cu{sub 17}Al{sub 83} alloy. • The potential difference between CuAl{sub 2} and α-Al phase and the replacement reaction in multiphase solution are key factors. - Abstract: Two-dimensional nano- or micro-scale fractal dendritic coppers (FDCs) were synthesized by electroless immersing of Cu-Al alloys in hydrochloric acid solution containing copper chloride without any assistance of template or surfactant. The FDC size increases with the increase of Al content in Cu-Al alloys immersed in CuCl{sub 2} + HCl solution. Compared to Cu{sub 40}Al{sub 60} and Cu{sub 45}Al{sub 55} alloys, the FDC shows hierarchical distribution and homogeneous structures using Cu{sub 17}Al{sub 83} alloy as the starting alloy. The growth direction of the FDC is <110>, and all angles between the trunks and branches are 60°. Nanoscale Cu{sub 2}O was found at the edge of FDC. Interestingly, nanoporous copper (NPC) can also be obtained through Cu{sub 17}Al{sub 83} alloy. Studies showed that the formation of FDC depended on two key factors: the potential difference between CuAl{sub 2} intermetallic and α-Al phase of dual-phase Cu-Al alloys; a replacement reaction that usually occurs in multiphase solution. The electrochemical experiment further proved that the multi-branch dendritic structure is very beneficial to the proton transfer in the process of catalyzing methanol.

  7. GeSn-on-insulator substrate formed by direct wafer bonding

    Energy Technology Data Exchange (ETDEWEB)

    Lei, Dian; Wang, Wei; Gong, Xiao, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org; Yeo, Yee-Chia, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Lee, Kwang Hong; Wang, Bing [Low Energy Electronic Systems (LEES), Singapore MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602 (Singapore); Bao, Shuyu [Low Energy Electronic Systems (LEES), Singapore MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Tan, Chuan Seng [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2016-07-11

    GeSn-on-insulator (GeSnOI) on Silicon (Si) substrate was realized using direct wafer bonding technique. This process involves the growth of Ge{sub 1-x}Sn{sub x} layer on a first Si (001) substrate (donor wafer) followed by the deposition of SiO{sub 2} on Ge{sub 1-x}Sn{sub x}, the bonding of the donor wafer to a second Si (001) substrate (handle wafer), and removal of the Si donor wafer. The GeSnOI material quality is investigated using high-resolution transmission electron microscopy, high-resolution X-ray diffraction (HRXRD), atomic-force microscopy, Raman spectroscopy, and spectroscopic ellipsometry. The Ge{sub 1-x}Sn{sub x} layer on GeSnOI substrate has a surface roughness of 1.90 nm, which is higher than that of the original Ge{sub 1-x}Sn{sub x} epilayer before transfer (surface roughness is 0.528 nm). The compressive strain of the Ge{sub 1-x}Sn{sub x} film in the GeSnOI is as low as 0.10% as confirmed using HRXRD and Raman spectroscopy.

  8. Gelsolin-Cu/ZnSOD interaction alters intracellular reactive oxygen species levels to promote cancer cell invasion

    KAUST Repository

    Tochhawng, Lalchhandami; Deng, Shuo; Ganesan, Pugalenthi; Kumar, Alan Prem; Lim, Kiat Hon; Yang, Henry; Hooi, Shing Chuan; Goh, Yaw Chong; Maciver, Sutherland K.; Pervaiz, Shazib; Yap, Celestial T.

    2016-01-01

    , and this is mediated via gelsolin's effects in elevating intracellular superoxide (O2 .-) levels. We also provide evidence for a novel physical interaction between gelsolin and Cu/ZnSOD, that inhibits the enzymatic activity of Cu/ZnSOD, thereby resulting in a sustained

  9. Separations on a cellulose exchanger with salicylic acid as functional group. [Fe/sup 3//sup+//Cu/sup 2//sup+/, Cu/sup 2//sup+//Ni/sup 2//sup+//, and Cu/sup 2//sup+//Cu complex separations

    Energy Technology Data Exchange (ETDEWEB)

    Burba, P; Lieser, K H [Technische Hochschule Darmstadt (F.R. Germany). Fachbereich Anorganische Chemie und Kernchemie

    1976-07-01

    The use of a cellulose compound containing salicylic acid as functional group (capacity 0.6 mequ./g) for different problems is described. The seperations Fe/sup 3 +//Cu/sup 2 +/ and Cu/sup 2 +//Ni/sup 2 +/ in aqueous solutions are achieved smoothly at pH 2 and 2.5 resp. In organic solvents (pyridine) copper ions are separated from copper complexes as shown by the examples Cu/sup 2 +//(Cu(mnt)/sub 2/)/sup 2 -/ (mnt = maleonitril-1,2-dithiolate) and Cu/sup 2 +//dibenzo(b.i.)(5.9.14.18)tetraazacyclotetradecene-copper (Cu(chel)). The complex (Cu(mnt)/sub 2/)/sup 2 -/ can be labelled with Cu-64 on a separation column, whereas (Cu-(chel)) is substition inert.

  10. Laser Photolytic Approach to Cu/polymer Sols and Cu/polymer Nanocomposites with Amorphous Cu Phase.

    Czech Academy of Sciences Publication Activity Database

    Pola, Josef; Ouchi, A.; Bakardjieva, Snejana; Urbanová, Markéta; Boháček, Jaroslav; Šubrt, Jan

    2007-01-01

    Roč. 192, 2-3 (2007) , s. 84-92 ISSN 1010-6030 Institutional research plan: CEZ:AV0Z40720504; CEZ:AV0Z40320502 Keywords : Cu-polymer nanocomposite * laser solution photolysis * amorphous Cu phase Subject RIV: CH - Nuclear ; Quantum Chemistry Impact factor: 1.911, year: 2007

  11. Advances in Cost-Efficient Thin-Film Photovoltaics Based on Cu(In,Ga)Se2

    Institute of Scientific and Technical Information of China (English)

    Michael Powalla; Stefan Paetel; Dimitrios Hariskos; Roland Wuerz; Friedrich Kessler; Peter Lechner; Wiltraud Wischmann; Theresa Magorian Friedlmeier

    2017-01-01

    In this article,we discuss the leading thin-film photovoltaic (PV) technology based on the Cu(In,Ga)Se2 (CIGS)compound semiconductor.This contribution includes a general comparison with the conventional Si-wafer-based PV technology and discusses the basics of the CIGS technology as well as advances in worldrecord-level conversion efficiency,production,applications,stability,and future developments with respect to a flexible product.Once in large-scale mass production,the CIGS technology has the highest potential of all PV technologies for cost-efficient clean energy generation.

  12. Advances in Cost-Efficient Thin-Film Photovoltaics Based on Cu(In,GaSe2

    Directory of Open Access Journals (Sweden)

    Michael Powalla

    2017-08-01

    Full Text Available In this article, we discuss the leading thin-film photovoltaic (PV technology based on the Cu(In,GaSe2 (CIGS compound semiconductor. This contribution includes a general comparison with the conventional Si-wafer-based PV technology and discusses the basics of the CIGS technology as well as advances in world-record-level conversion efficiency, production, applications, stability, and future developments with respect to a flexible product. Once in large-scale mass production, the CIGS technology has the highest potential of all PV technologies for cost-efficient clean energy generation.

  13. Synthesis, Characterization and Catalytic Activity of Cu/Cu2O Nanoparticles Prepared in Aqueous Medium

    Directory of Open Access Journals (Sweden)

    Sayed M. Badawy

    2015-07-01

    Full Text Available Copper/Copper oxide (Cu/Cu2O nanoparticles were synthesized by modified chemical reduction method in an aqueous medium using hydrazine as reducing agent and copper sulfate pentahydrate as precursor. The Cu/Cu2O nanoparticles were characterized by X-ray Diffraction (XRD, Energy Dispersive X-ray Fluorescence (EDXRF, Scanning Electron Microscope (SEM, and Transmission Electron Microscope (TEM. The analysis revealed the pattern of face-centered cubic (fcc crystal structure of copper Cu metal and cubic cuprites structure for Cu2O. The SEM result showed monodispersed and agglomerated particles with two micron sizes of about 180 nm and 800 nm, respectively. The TEM result showed few single crystal particles of face-centered cubic structures with average particle size about 11-14 nm. The catalytic activity of Cu/Cu2O nanoparticles for the decomposition of hydrogen peroxide was investigated and compared with manganese oxide MnO2. The results showed that the second-order equation provides the best correlation for the catalytic decomposition of H2O2 on Cu/Cu2O. The catalytic activity of hydrogen peroxide by Cu/Cu2O is less than the catalytic activity of MnO2 due to the presence of copper metal Cu with cuprous oxide Cu2O. © 2015 BCREC UNDIP. All rights reservedReceived: 6th January 2015; Revised: 14th March 2015; Accepted: 15th March 2015How to Cite: Badawy, S.M., El-Khashab, R.A., Nayl, A.A. (2015. Synthesis, Characterization and Catalytic Activity of Cu/Cu2O Nanoparticles Prepared in Aqueous Medium. Bulletin of Chemical Reaction Engineering & Catalysis, 10 (2: 169-174. (doi:10.9767/bcrec.10.2.7984.169-174 Permalink/DOI: http://dx.doi.org/10.9767/bcrec.10.2.7984.169-174  

  14. Deep level centers in electron-irradiated silicon crystals doped with copper at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yarykin, Nikolai [Institute of Microelectronics Technology, RAS, Chernogolovka (Russian Federation); Weber, Joerg [Technische Universitaet Dresden (Germany)

    2017-07-15

    The effect of bombardment with energetic particles on the deep-level spectrum of copper-contaminated silicon wafers is studied by space charge spectroscopy methods. The p-type FZ-Si wafers were doped with copper in the temperature range of 645-750 C and then irradiated with the 10{sup 15} cm{sup -2} fluence of 5 MeV electrons at room temperature. Only the mobile Cu{sub i} species and the Cu{sub PL} centers are detected in significant concentrations in the non-irradiated Cu-doped wafers. The properties of the irradiated samples are found to qualitatively depend on the copper in-diffusion temperature T{sub diff}. For T{sub diff} > 700 C, the irradiation partially reduces the Cu{sub i} concentration and introduces additional Cu{sub PL} centers while no standard radiation defects are detected. If T{sub diff} was below ∝700 C, the irradiation totally removes the mobile Cu{sub i} species. Instead, the standard radiation defects and their complexes with copper appear in the deep-level spectrum. A model for the defects reaction scheme during the irradiation is derived and discussed. DLTS spectrum of the Cu-contaminated and then irradiated silicon qualitatively depends on the copper in-diffusion temperature. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Synthesis of Cu2O from CuO thin films: Optical and electrical properties

    Directory of Open Access Journals (Sweden)

    Dhanya S. Murali

    2015-04-01

    Full Text Available Hole conducting, optically transparent Cu2O thin films on glass substrates have been synthesized by vacuum annealing (5×10−6 mbar at 700 K for 1 hour of magnetron sputtered (at 300 K CuO thin films. The Cu2O thin films are p-type and show enhanced properties: grain size (54.7 nm, optical transmission 72% (at 600 nm and Hall mobility 51 cm2/Vs. The bulk and surface Valence band spectra of Cu2O and CuO thin films are studied by temperature dependent Hall effect and Ultra violet photo electron Spectroscopy (UPS. CuO thin films show a significant band bending downwards (due to higher hole concentration than Cu2O thin films.

  16. Infiltrated TiC/Cu composites

    International Nuclear Information System (INIS)

    Frage, N.; Froumin, N.; Rubinovich, L.; Dariel, M.P.

    2001-01-01

    One approach for the fabrication of ceramic-metal composites is based on the pressureless impregnation of a porous ceramic preform by a molten metal. Molten Cu does not react with TiC and the wetting angle is close to 90 o . Nonetheless, molten Cu readily impregnates partially sintered TiC preforms. A model that describes the dependence of the critical contact angle for spontaneous impregnation by molten metals in partially sintered preforms on the level of densification and on the morphology of the particles was developed. For high aspect ratios of the particles forming the preform, wetting angles close to 90 o still allow impregnation by the molten metal. The results of the model were confirmed by infiltration of partially sintered TiC preforms with molten Cu and by fabrication of the TiC/Cu composites with various ceramic-to metal ratios. Decreasing of the metal content in the composite from 50 vol.% to 10 vol.% leads to a hardness increase from 250 to 1800 HV, and to the decrease of the bending strength from 960 to 280 MPa. The resistivity of these TiC/Cu composites decreases from 142 ohm cm to 25 ohm cm. (author)

  17. Direct synthesis of RGO/Cu{sub 2}O composite films on Cu foil for supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Xiangmao; Wang, Kun [Key Laboratory for Ultrafine Materials of the Ministry of Education, Shanghai Key Laboratory of Advanced Polymeric Materials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237 (China); Zhao, Chongjun, E-mail: chongjunzhao@ecust.edu.cn [Key Laboratory for Ultrafine Materials of the Ministry of Education, Shanghai Key Laboratory of Advanced Polymeric Materials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237 (China); Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong 2500 (Australia); Qian, Xiuzhen [Key Laboratory for Ultrafine Materials of the Ministry of Education, Shanghai Key Laboratory of Advanced Polymeric Materials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237 (China); Chen, Shi [School of Information Engineering, Wuhan University of Technology, Wuhan 430070 (China); Li, Zhen, E-mail: zhenl@uow.edu.au [Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong 2500 (Australia); Liu, Huakun; Dou, Shixue [Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong 2500 (Australia)

    2014-02-15

    Graphical abstract: RGO/Cu{sub 2}O/Cu composites were synthesized by simple hydrothermal treatment of copper foils with graphene oxide, in which the reduction of graphene oxide and the formation of Cu{sub 2}O nanoparticles simultaneously happened in one-pot reaction. These composites can be directly used as electrodes of supercapacitors with the highest specific capacitance of 98.5 F/g at 1 A g{sup −1}, which is much better than that of CuO or Cu{sub 2}O electrodes. -- Highlights: • The RGO/Cu{sub 2}O/Cu composites were obtained by a friendly method in one step. • Improved capacitance performance is realized by the hydrothermal treatment of graphene oxides with Cu foils. • RGO/Cu{sub 2}O/Cu-200 composites exhibit the largest specific capacitance of 98.5 F g{sup −1} at 1 A g{sup −1}. -- Abstract: Reduced graphene oxide/cuprous oxide (RGO/Cu{sub 2}O) composite films were directly synthesized on the surface of copper foil substrates through a straight redox reaction between GO and Cu foil via a hydrothermal approach. Characterization of the resultant composites with X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, and field emission scanning electron microscope (FESEM) confirms the formation of Cu{sub 2}O and reduction of GO, in which Cu{sub 2}O nanoparticles were well covered by RGO. The resultant composites (referred to as RGO/Cu{sub 2}O/Cu) were directly used as electrodes for supercapacitors, and their electrochemical performance was assessed by cyclic voltammetry (CV), galvanostatic charge–discharge (GCD), and electrochemical impedance spectrometry (EIS) in 1 M KOH aqueous solution. A specific capacitance of 98.5 F g{sup −1} at 1 A g{sup −1} was obtained, which is much higher than that of pure Cu{sub 2}O prepared under the same conditions, due to the presence of RGO.

  18. Proteomic response of mussels Mytilus galloprovincialis exposed to CuO NPs and Cu{sup 2+}: An exploratory biomarker discovery

    Energy Technology Data Exchange (ETDEWEB)

    Gomes, Tânia, E-mail: tania.gomes@niva.no; Chora, Suze; Pereira, Catarina G.; Cardoso, Cátia; Bebianno, Maria João

    2014-10-15

    the other hand, Cu{sup 2+} affected a protein associated with adhesion and mobility, precollagen-D that is associated with the detoxification mechanism of Cu{sup 2+}. Protein identification clearly showed that the toxicity of CuO NPs is not solely due to Cu{sup 2+} dissolution and can result in mitochondrial and nucleus stress-induced cell signalling cascades that can lead to apoptosis. While the absence of the mussel genome precluded the identification of other proteins relevant to clarify the effects of CuO NPs in mussels’ tissues, proteomics analysis provided additional knowledge of their potential effects at the protein level that after confirmation and validation can be used as putative new biomarkers in nanotoxicology.

  19. 64Cu-ATSM Reflects pO2 Levels in Human Head and Neck Cancer Xenografts but Not in Colorectal Cancer Xenografts: Comparison with 64CuCl2.

    Science.gov (United States)

    Li, Fan; Jørgensen, Jesper T; Forman, Julie; Hansen, Anders E; Kjaer, Andreas

    2016-03-01

    The hypoxia PET tracer (64)Cu-diacetyl-bis(N(4)-methylthiosemicarbazonate) ((64)Cu-ATSM) has shown promising results in clinical studies. However, concerns have been raised with regard to the possible effect of copper metabolism and free copper on tumor uptake and thereby the robustness of (64)Cu-ATSM as a hypoxia marker. In this study, accumulation and distribution of (64)Cu-ATSM and (64)CuCl2 in tumor tissue were compared with partial pressure of oxygen (pO2) probe measurements. One-hour dynamic PET scans were performed on nude mice bearing subcutaneous human head and neck tumors (FaDu) and human colorectal tumors (HT29) after administration of either (64)Cu-ATSM or (64)CuCl2. Subsequently, tracks were generated and track markers were positioned in tumors to allow for registration of their exact location on the high-resolution CT scan. After completion of the CT scan, pO2 probe measurements were performed along each track. PET and CT images were coregistered and ROIs drawn on the basis of the location of track markers and pO2 probe measurement depth. A linear mixed model for repeated measures was applied for the comparison of PET tracer uptake to corresponding pO2 values. Comparable uptake of (64)Cu-ATSM and (64)CuCl2 was found in the kidney, muscle, and liver of all animals, but (64)CuCl2 showed a higher uptake 10-60 min after injection in both tumor models. Significant differences were also found for both tumor-to-muscle and tumor-to-liver ratios. The intratumoral distribution of (64)Cu-ATSM, but not (64)CuCl2, showed a significant negative relationship with pO2 measurements in FaDu tumors. However, this relationship was not found in HT29 tumors. (64)Cu-ATSM and (64)CuCl2 displayed different uptake in tumors. In human head and neck xenografts, (64)Cu-ATSM but not (64)CuCl2 reflected pO2 measurements, indicating that (64)Cu-ATSM is a hypoxia-specific marker in this tumor type. However, data from colorectal cancer xenografts indicated that (64)Cu-ATSM may not be

  20. Operations and Performance of RHIC as a Cu-Cu Collider

    CERN Document Server

    Pilat, Fulvia Caterina; Bai, Mei; Barton, Donald; Beebe-Wang, Joanne; Blaskiewicz, Michael; Brennan, Joseph M; Bruno, Donald; Cameron, Peter; Connolly, Roger; De Long, Joseph; Drees, Angelika; Fischer, Wolfram; Ganetis, George; Gardner, Chris J; Glenn, Joseph; Harvey, Margaret; Hayes, Thomas; Hseuh Hsiao Chaun; Huang, Haixin; Ingrassia, Peter; Iriso, Ubaldo; Lee, Roger C; Litvinenko, Vladimir N; Luo, Yun; MacKay, William W; Marr, Gregory J; Marusic, Al; Michnoff, Robert; Montag, Christoph; Morris, John; Nicoletti, Tony; Oerter, Brian; Ptitsyn, Vadim; Roser, Thomas; Russo, Thomas; Sandberg, Jon; Satogata, Todd; Schultheiss, Carl; Tepikian, Steven; Tomas, Rogelio; Trbojevic, Dejan; Tsoupas, Nicholaos; Tuozzolo, Joseph; Vetter, Kurt; Zaltsman, Alex; Zeno, Keith; Zhang, S Y; Zhang, Wu

    2005-01-01

    The 5th year of RHIC operations, started in November 2004 and expected to last till June 2005, consists of a physics run with Cu-Cu collisions at 100 GeV/u followed by one with polarized protons at 100 GeV. We will address here overall performance of the RHIC complex used for the first time as a Cu-Cu collider, and compare it with previous operational experience with Au, PP and asymmetric d-Au collisions. We will also discuss operational improvements, such as a ?* squeeze to 85cm in the high luminosity interaction regions from the design value of 1m, system improvements and machine performance limitations, such as vacuum pressure rise, intra-beam scattering, and beam beam interaction.

  1. Effect of Cu Salt Molarity on the Nanostructure of CuO Prolate Spheroid

    Science.gov (United States)

    Sabeeh, Sabah H.; Hussein, Hashim Abed; Judran, Hadia Kadhim

    Copper sulfate pentahydrate was used as a source of Cu ion with five different molarities (0.02, 0.05, 0.1, 0.15, 2 and 0.25M). XRD, FE-SEM and TEM techniques all showed that CuO samples have polycrystalline monoclinic structure. CuO prolate spheroid is assembled from nanoparticles as building units. It was demonstrated that the purity, morphology, size range of prolate spheroid and density of nano building units are significantly influenced by Cu precursor’s molarity. The pure phase of CuO prolate spheroid was produced via molarity of 0.2M with crystallite size of 15.1565nm while the particle size of building units ranges from 16nm to 21nm. The stability of CuO nanosuspension or nanofluid was evaluated by zeta potential analysis. The obtained properties of specific structure with large surface area of CuO prolate spheroid make it a promising candidate for wide range of potential applications as in nanofluids for cooling purposes.

  2. Synthesis of Cu Nanoparticles Using Copper Carbonate as Cu Source Toward Versatile Applications.

    Science.gov (United States)

    Yano, Kazuhisa; Ishizaki, Toshitaka; Sugiyama, Hidehiko

    2018-07-01

    Cu nanoparticles (NPs) coated with polyvinylpyrrolidone (PVP) were fabricated by polyol method using copper carbonate as a raw material. To increase the reaction temperature, glycol multimers such as diethylene glycol, triethylene glycol, or tetraethylene glycol were examined as a solvent. With increasing degree of multimerization, average diameter of Cu NPs decreased. The synthesis of Cu NPs was further investigated by changing reaction temperature, the amount and molecular weight of PVP in triethylene glycol as a solvent. Average diameter and standard deviation of Cu NPs were found to be highly dependent on those factors. As a result, fine Cu NPs ranging from 28 to 67 nm in average size with narrow size distribution (standard deviation: 16-28%) were obtained. The obtained Cu NPs were applied to a nanofluid, which showed higher thermal conductivity than the theoretical value. The antibacterial activity of Cu NPs was also demonstrated, and found to have strong antibacterial activity.

  3. Elastocaloric effect in CuAlZn and CuAlMn shape memory alloys under compression

    OpenAIRE

    Qian, Suxin; Geng, Yunlong; Wang, Yi; Pillsbury, Thomas E.; Hada, Yoshiharu; Yamaguchi, Yuki; Fujimoto, Kenjiro; Hwang, Yunho; Radermacher, Reinhard; Cui, Jun; Yuki, Yoji; Toyotake, Koutaro; Takeuchi, Ichiro

    2016-01-01

    This paper reports the elastocaloric effect of two Cu-based shape memory alloys: Cu68Al16Zn16 (CuAlZn) and Cu73Al15Mn12 (CuAlMn), under compression at ambient temperature. The compression tests were conducted at two different rates to approach isothermal and adiabatic conditions. Upon unloading at a strain rate of 0.1 s−1 (adiabatic condition) from 4% strain, the highest adiabatic temperature changes (ΔTad) of 4.0 K for CuAlZn and 3.9 K for CuAlMn were obtained. The maximum stress and hystere...

  4. [b][/b]Impact of copper (Cu at the dose of 50 mg on haematological and biochemical blood parameters in turkeys, and level of Cu accumulation in the selected tissues as a source of information on product safety for consumers

    Directory of Open Access Journals (Sweden)

    Bogusław Makarski

    2014-09-01

    Full Text Available Introduction. The current state-of the art points to a positive impact of copper (Cu supplements on the general health status in poultry. Copper induces beneficial changes in the haematological and biochemical blood parameters. It also displays immunostimulating properties and helps maintain a proper microbiological balance in the digestive tract. [b]Objective[/b]. The objective of this study was to investigate the impact of Cu at the dose of 50 mg/kg BW, administered in organic and inorganic form, on the haematological and biochemical blood parameters and level of Cu bioaccumulation in the liver and pectoral muscle. [b]Materials and method[/b]. The study was carried out on 45 BUT-9 turkeys which had been were reared for 16 weeks. They were divided into 3 experimental groups: I – the control group; II – fed with CuSO[sub]4[/sub] at the dose of 50 mg Cu•dm [sup]-3 [/sup]H[sub]2[/sub]O; III – received a Cu chelate with lysine at the same dose. [b]Results[/b]. The administration of Cu at the dose exceeding the nutritional recommendations did not induce beneficial changes in the examined birds. This indicates that it is not necessary to administer Cu doses higher than the recommended levels. The extent of Cu accumulation in the pectoral muscle increased by 40% compared to the control group, whereas in the liver it was higher by 30–35% than in the birds without Cu administration. The level of Cu in tissues does not pose a risk to consumers. [b]Conclusions[/b]. The supplementation of Cu at the dose of 50 mg has a negative impact on the level of the analyzed parameters. The results of the presented study indicate that the administered Cu dose exceeds birds’ demand for this element.

  5. Humidity sensing performance of in-situ fabricated Cu/Cu2O/Cu2S-polymer nanocomposite via polyphenylene sulphide cyclisation route.

    Science.gov (United States)

    Adkar, Dattatraya; Hake, Abhay; Jadkar, Sandesh; Adhyapak, Parag; Mulik, Uttamrao; Amalnerkar, Dinesh

    2011-08-01

    We herein report the feasibility of novel polymer-inorganic solid state reaction route for simultaneous in situ generation of Cu2S and Cu nanostructures in polymer network. Polyphenylene Sulphide (PPS) which is engineering thermoplastic acts as chalcogen source as well as stabilizing matrix for the resultant nano products. Typical solid state reaction was accomplished by simply heating the physical admixtures of the two reactants i.e., copper acetate and PPS by varying molar ratios mainly 1:1, 1:5, 1:10, 1:15, 1:20 at the crystalline melting temperature (285 degrees C) of PPS. The synthesized products were characterized using various physicochemical characterization techniques like X-ray Diffractometry, Field emission Scanning Electron Microscopy, Transmission Electron Microscopy, UV-Visible spectroscopy and X-ray photoelectron spectroscopy. The prima facie observations suggest occurrence of nanocrystalline Cu2S in case of product obtained with equimolar ratio, whereas remaining samples show mixture of Cu and Cu2O. The TEM analysis reveals nanoscale polydispersity (5-60 nm) and prevalence of mainly spherical morphological features in all the cases with occasional indications of plate like and cubical morphological features depending upon the molar ratio of the reactants. The humidity sensing characterization of these nanocomposites was also performed. The resistivity response with the level of humidity (20 to 70% RH) was compared for these nanocomposites. The linear response is obtained for all the samples. The sensitivity of 1:1 molar ratio sample was found to be maximum among all the samples.

  6. Synthesis and photocatalytic activity of carbon spheres loaded Cu2O/Cu composites

    International Nuclear Information System (INIS)

    Li, Yinhui; Zhao, Mengyao; Zhang, Na; Li, Ruijuan; Chen, Jianxin

    2015-01-01

    Highlights: • Carbon spheres loaded Cu 2 O/Cu composites are obtained by hydrothermal process. • Cu 2 O/Cu nanocrystals grow on the surface of carbon spheres. • The composites with core–shell structure show highly photo-catalytic activity. • The composites can degrade methyl orange under simulated solar light irradiation. • The composites can be used to treat dye wastewater or organic pollutants. - Abstract: In this work, using amylose as carbon source and cupric acetate as copper source, carbon spheres loaded Cu 2 O/Cu composites were obtained by hydrothermal synthesis. The effects of the molar ratios between glucose and Cu(II), and hydrothermal time on the morphology and sizes of the composites were investigated. The result of photocatalytic experiments demonstrated that the composites could degrade methyl orange in aqueous solution under simulated solar light irradiation. The highest degradation rate was achieved to 93.83% when the composites were prepared by hydrothermal synthesis at 180 °C for 16 h and the molar ratio between glucose and Cu(II) was 10/1. The composites, as new and promising materials, can be used to treat dye wastewater or other organic pollutants

  7. Atomic structure and formation of CuZrAl bulk metallic glasses and composites

    International Nuclear Information System (INIS)

    Kaban, I.; Jóvári, P.; Escher, B.; Tran, D.T.; Svensson, G.; Webb, M.A.; Regier, T.Z.; Kokotin, V.; Beuneu, B.; Gemming, T.; Eckert, J.

    2015-01-01

    Graphical abstract: Partial radial distribution functions for Cu 47.5 Zr 47.5 Al 5 metallic glass and relevant crystal structures. - Abstract: Cu 47.5 Zr 47.5 Al 5 metallic glass is studied experimentally by high-energy X-ray diffraction, neutron diffraction with isotopic substitution, electron diffraction and X-ray absorption spectroscopy. The atomic structure of the glass is modeled by reverse Monte-Carlo and molecular dynamics simulations. RMC modeling of seven experimental datasets enabled reliable separation of all partial pair distribution functions for Cu 47.5 Zr 47.5 Al 5 metallic glass. A peculiar structural feature of the ternary alloy is formation of the strong Al–Zr bonds, which are supposed to determine its high viscosity and enhanced bulk glass formation. Analysis of the local atomic order in Cu 47.5 Zr 47.5 Al 5 glass and Cu 10 Zr 7 , CuZr 2 and CuZr B2 crystalline structures elucidates their similarities and differences explaining the phase formation sequence by devitrification of the glass.

  8. Investigation of Cu-poor and Cu-rich Cu(In,Ga)Se{sub 2}/CdS interfaces using hard X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ümsür, B., E-mail: buenyamin.uemsuer@helmholtz-berlin.de [Helmholtz-Zentrum-Berlin, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Calvet, W.; Höpfner, B.; Steigert, A.; Lauermann, I.; Gorgoi, M.; Prietzel, K.; Navirian, H.A.; Kaufmann, C.A.; Unold, T. [Helmholtz-Zentrum-Berlin, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Lux-Steiner, M. Ch. [Helmholtz-Zentrum-Berlin, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Department of Physics, Arnimallee 14, D-14195 Berlin (Germany)

    2015-05-01

    Cu-poor and Cu-rich Cu(In,Ga)Se{sub 2} (CIGSe) absorbers were used as substrates for the chemical bath deposition of ultrathin CdS buffer layers in the thickness range of a few nanometers in order to make the CIGSe/CdS interface accessible by hard X-ray photo-emission spectroscopy. The composition of both, the absorber and the buffer layer as well as the energetics of the interface was investigated at room temperature and after heating the samples to elevated temperatures (200 °C, 300 °C and 400 °C). It was found that the amount of Cd after the heating treatment depends on the near surface composition of the CIGSe absorber. No Cd was detected on the Cu-poor surface after the 400 °C treatment due to its diffusion into the CIGSe layer. In contrast, Cd was still present on the Cu-rich surface after the same treatment at 400 °C. - Highlights: • Cd diffusion into Cu(In,Ga)Se{sub 2} (CIGSe) absorber is investigated. • Cu-poor and Cu-rich CIGSe samples are compared. • Cd diffusion into CIGSe is found to be dependent on the surface composition of CIGSe.

  9. Cu-Doping Effects in CdI(2) Nanocrystals: The Role of Cu-Agglomerates.

    Science.gov (United States)

    Miah, M Idrish

    2008-11-22

    Cu-doping effects in CdI(2) nanocrystals are studied experimentally. We use the photostimulated second harmonic generation (PSSHG) as a tool to investigate the effects. It is found that the PSSHG increases with increasing Cu content up to 0.6% and then decreases due to the formation of the Cu-agglomerates. The PSSHG for the crystal with Cu content higher than 1% reduces to that for the undoped CdI(2) crystal. The results suggest that a crucial role of the Cu-metallic agglomerates is involved in the processes as responsible for the observed effects.

  10. Cu-Doping Effects in CdI2Nanocrystals: The Role of Cu-Agglomerates

    Directory of Open Access Journals (Sweden)

    Miah M

    2008-01-01

    Full Text Available Abstract Cu-doping effects in CdI2nanocrystals are studied experimentally. We use the photostimulated second harmonic generation (PSSHG as a tool to investigate the effects. It is found that the PSSHG increases with increasing Cu content up to 0.6% and then decreases due to the formation of the Cu-agglomerates. The PSSHG for the crystal with Cu content higher than 1% reduces to that for the undoped CdI2crystal. The results suggest that a crucial role of the Cu-metallic agglomerates is involved in the processes as responsible for the observed effects.

  11. Crystallization and electrical resistivity of Cu{sub 2}O and CuO obtained by thermal oxidation of Cu thin films on SiO{sub 2}/Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    De Los Santos Valladares, L., E-mail: ld301@cam.ac.uk [Cavendish Laboratory, University of Cambridge, J.J Thomson Av., Cambridge CB3 0HE (United Kingdom); Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Departamento de Fisica, Universidade Federal de Pernambuco, 50670-901, Recife-Pe (Brazil); Salinas, D. Hurtado [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Laboratorio de Ceramicos y Nanomateriales, Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima (Peru); Dominguez, A. Bustamante [Laboratorio de Ceramicos y Nanomateriales, Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima (Peru); Najarro, D. Acosta [Instituto de Fisica, Departamento de Materia Condensada, Universidad Nacional Autonoma de Mexico, Ap. Postal 20-364, CP 01000 (Mexico); Khondaker, S.I. [NanoScience Technology Centre and Department of Physics, University of Central Florida, Orlando, FL 32826 (United States); Mitrelias, T.; Barnes, C.H.W. [Cavendish Laboratory, University of Cambridge, J.J Thomson Av., Cambridge CB3 0HE (United Kingdom); Aguiar, J. Albino [Departamento de Fisica, Universidade Federal de Pernambuco, 50670-901, Recife-Pe (Brazil); Majima, Y. [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); CREST, Japan Science and Technology Agency (JST), 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)

    2012-08-01

    In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO{sub 2}/Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 Degree-Sign C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu {yields} Cu + Cu{sub 2}O {yields} Cu{sub 2}O {yields} Cu{sub 2}O + CuO {yields} CuO was detected. Pure Cu{sub 2}O films are obtained at 200 Degree-Sign C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300-550 Degree-Sign C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current-voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: Black-Right-Pointing-Pointer The crystallization and electrical resistivity of oxides in a Cu films are studied. Black-Right-Pointing-Pointer In annealing Cu films, the phase evolution Cu + Cu{sub 2}O {yields} Cu{sub 2}O {yields} Cu{sub 2}O + CuO {yields} CuO occurs. Black-Right-Pointing-Pointer A resistivity phase diagram, obtained from the current-voltage response, is presented. Black-Right-Pointing-Pointer Some decreases in the resistivity may be related to the crystallization.

  12. Sol-gel bonding of silicon wafers

    International Nuclear Information System (INIS)

    Barbe, C.J.; Cassidy, D.J.; Triani, G.; Latella, B.A.; Mitchell, D.R.G.; Finnie, K.S.; Bartlett, J.R.; Woolfrey, J.L.; Collins, G.A.

    2005-01-01

    Low temperature bonding of silicon wafers was achieved using sol-gel technology. The initial sol-gel chemistry of the coating solution was found to influence the mechanical properties of the resulting bonds. More precisely, the influence of parameters such as the alkoxide concentration, water-to-alkoxide molar ratio, pH, and solution aging on the final bond morphologies and interfacial fracture energy was studied. The thickness and density of the sol-gel coating were characterised using ellipsometry. The corresponding bonded specimens were investigated using attenuated total reflectance Fourier transformed infrared spectroscopy to monitor their chemical composition, infrared imaging to control bond integrity, and cross-sectional transmission electron microscopy to study their microstructure. Their interfacial fracture energy was measured using microindentation. An optimum water-to-alkoxide molar ratio of 10 and hydrolysis water at pH = 2 were found. Such conditions led to relatively dense films (> 90%), resulting in bonds with a fracture energy of 3.5 J/m 2 , significantly higher than those obtained using classical hydrophilic bonding (typically 1.5-2.5 J/m 2 ). Ageing of the coating solution was found to decrease the bond strength

  13. Facile synthesis of Cu2O/CuO/RGO nanocomposite and its superior cyclability in supercapacitor

    International Nuclear Information System (INIS)

    Wang, Kun; Dong, Xiangmao; Zhao, Chongjun; Qian, Xiuzhen; Xu, Yunlong

    2015-01-01

    A reduced graphene oxide (RGO)-based nanocomposite of redox counterpart of the oxides of Cu(I)-Cu(II) pair for Faradaic reaction, Cu 2 O/CuO/RGO, was controllably synthesized through a facile, eco-friendly one-step hydrothermal-assisted redox reaction of elemental Cu and graphene oxide (GO) without the addition of any other reagents. The resultant Cu 2 O/CuO/RGO nanocomposites were characterized by X-ray diffraction (XRD), Raman spectroscopy, Thermogravimetric analysis (TG), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM). It is found that, when dealloyed nanoporous Cu was used as a Cu source, the uniform spherical Cu 2 O/CuO nanoparticles with double size scales (∼25 nm and ∼5 nm) were anchored on RGO sheets. This Cu 2 O/CuO/RGO nanocomposite redox counterpart exhibits improved rate capability and excellent cycling stability, i.e., only ca. 21.4% of the capacity was lost when the discharge current density increases from 1 A g −1 (173.4 F g −1 ) to 10 A g −1 (136.3 F g −1 ). Especially, the capacity remains almost unchanged (98.2%) after 100,000 cycles at 10 A g −1 . The good electrochemical performance and simple accessibility prove that this Cu 2 O/CuO/RGO composite consisting of a pair of redox counterparts is a promising material for supercapacitor applications

  14. Kinetics of Isothermal Reactive Diffusion Between Solid Cu and Liquid Sn

    Science.gov (United States)

    O, M.; Suzuki, T.; Kajihara, M.

    2018-01-01

    The Cu/Sn system is one of the most fundamental and important metallic systems for solder joints in electric devices. To realize reliable solder joints, information on reactive diffusion at the solder joint is very important. In the present study, we experimentally investigated the kinetics of the reactive diffusion between solid Cu and liquid Sn using semi-infinite Cu/Sn diffusion couples prepared by an isothermal bonding technique. Isothermal annealing of the diffusion couple was conducted in the temperature range of 533-603 K for various times up to 172.8 ks (48 h). Using annealing, an intermetallic layer composed of Cu6Sn5 with scallop morphology and Cu3Sn with rather uniform thickness is formed at the original Cu/Sn interface in the diffusion couple. The growth of the Cu6Sn5 scallop occurs much more quickly than that of the Cu3Sn layer and thus predominates in the overall growth of the intermetallic layer. This tendency becomes more remarkable at lower annealing temperatures. The total thickness of the intermetallic layer is proportional to a power function of the annealing time, and the exponent of the power function is close to unity at all the annealing temperatures. This means that volume diffusion controls the intermetallic growth and the morphology of the Cu6Sn5/Sn interface influences the rate-controlling process. Adopting a mean value of 0.99 for the exponent, we obtain a value of 26 kJ/mol for the activation enthalpy of the intermetallic growth.

  15. Based on Cu as framework constructed nanoporous CuO/Cu composites by a dealloy method for sodium-ion battery anode

    Science.gov (United States)

    Zheng, Tian; Li, Guangda; Li, Deming; Meng, Xiangeng

    2018-05-01

    Nanoporous CuO/Cu composites with a continuous channel structure were fabricated through a corroding Cu-Al alloy process. The width of the continuous channels was about 20 50 nm. Nanoporous structure could effectively sustain the volume expansion during the Na+ insertion/extraction process and shorten the Na+ diffusion length as well, which thus helps improve the Na+ storage performance. Moreover, the nanoporous structure can improve the contact area between the electrolyte and the electrode, leading to an increment in the number of Na+ insertion/extraction sites. When used as the anode for sodium-ion batteries, the CuO/Cu exhibited an initial capacity of 580 mAh g-1, and the capacity is maintained at 200 mAh g-1 after 200 cycles at a current density of 500 mA g-1.

  16. Investigation of annealing treatment on the interfacial properties of explosive-welded Al/Cu/Al multilayer

    International Nuclear Information System (INIS)

    Honarpisheh, M.; Asemabadi, M.; Sedighi, M.

    2012-01-01

    Highlights: ► We studied explosive-welded Al/Cu/Al multilayer. ► We investigated heat treatment influence on the bond properties of Al/Cu/Al. ► Intermetallic compounds were studied using the SEM, OM and EDS analysis. ► Variations of hardness in the thickness were investigated using micro-hardness. ► Intermetallic phases such as AlCu 3 and Al 2 C create at the interface of Al/Cu/Al. -- Abstract: In this study, an Al/Cu/Al multilayer sheet was fabricated by explosive welding process and the effects of annealing temperature on the interfacial properties of explosively bonded Al/Cu bimetal have been investigated. For this purpose, hardness changes along the thickness of the samples have been measured, and the thickness and type of intermetallic compounds formed at the joining interface have been explored by means of optical microscopy (OM), scanning electron microscopy (SEM) and also energy dispersive spectroscopy (EDS). The obtained results indicate that, with the increase of the annealing temperature, the thickness of intermetallic compounds has increased and the amount of hardness along the thickness of the joining interface has diminished. In the annealed sample at 400 °C for 30 min, it was observed that intermetallic layers have formed at the interface of Al/Cu bimetals. These layers consist of the intermetallic compounds AlCu 3 , Al 2 Cu and AlCu, and their thickness gets to about 5 μm at some points. The examinations performed by the SEM, following the Vickers micro-hardness test, indicated the existence of a number of microcracks at the top and bottom interface of the sample annealed at 400 °C. This shows the formation of brittle intermetallic compounds at the joining interface, and also indicates the low ductility of these compounds.

  17. Properties of spin-1/2 triangular-lattice antiferromagnets CuY2Ge2O8 and CuLa2Ge2O8

    Science.gov (United States)

    Cho, Hwanbeom; Kratochvílová, Marie; Sim, Hasung; Choi, Ki-Young; Kim, Choong Hyun; Paulsen, Carley; Avdeev, Maxim; Peets, Darren C.; Jo, Younghun; Lee, Sanghyun; Noda, Yukio; Lawler, Michael J.; Park, Je-Geun

    2017-04-01

    We found new two-dimensional (2D) quantum (S =1 /2 ) antiferromagnetic systems: Cu R E2G e2O8 (R E =Y and La). According to our analysis of high-resolution x-ray and neutron diffraction experiments, the Cu network of Cu R E2G e2O8 (R E =Y and La) exhibits a 2D triangular lattice linked via weak bonds along the perpendicular b axis. Our bulk characterizations from 0.08 to 400 K show that they undergo a long-range order at 0.51(1) and 1.09(4) K for the Y and La systems, respectively. Interestingly, they also exhibit field induced phase transitions. For theoretical understanding, we carried out the density functional theory (DFT) band calculations to find that they are typical charge-transfer-type insulators with a gap of Eg≅2 eV . Taken together, our observations make Cu R E2G e2O8 (R E =Y and La) additional examples of low-dimensional quantum spin triangular antiferromagnets with the low-temperature magnetic ordering.

  18. Highly stable carbon-doped Cu films on barrierless Si

    International Nuclear Information System (INIS)

    Zhang, X.Y.; Li, X.N.; Nie, L.F.; Chu, J.P.; Wang, Q.; Lin, C.H.; Dong, C.

    2011-01-01

    Electrical resistivities and thermal stabilities of carbon-doped Cu films on silicon have been investigated. The films were prepared by magnetron sputtering using a Cu-C alloy target. After annealing at 400 deg. C for 1 h, the resistivity maintains a low level at 2.7 μΩ-cm and no Cu-Si reaction is detected in the film by X-ray diffraction (XRD) and transmission electron microscopy (TEM) observations. According to the secondary ion mass spectroscopy (SIMS) results, carbon is enriched near the interfacial region of Cu(C)/Si, and is considered responsible for the growth of an amorphous Cu(C)/Si interlayer that inhibits the Cu-Si inter-diffusion. Fine Cu grains, less than 100 nm, were present in the Cu(C) films after long-term and high-temperature annealings. The effect of C shows a combination of forming a self-passivated interface barrier layer and maintaining a fine-grained structure of Cu. A low current leakage measured on this Cu(C) film also provides further evidence for the carbon-induced diffusion barrier interlayer performance.

  19. Atomistic models of Cu diffusion in CuInSe2 under variations in composition

    Science.gov (United States)

    Sommer, David E.; Dunham, Scott T.

    2018-03-01

    We construct an analytic model for the composition dependence of the vacancy-mediated Cu diffusion coefficient in undoped CuInSe2 using parameters from density functional theory. The applicability of this model is supported numerically with kinetic lattice Monte Carlo and Onsager transport tensors. We discuss how this model relates to experimental measurements of Cu diffusion, arguing that our results can account for significant contributions to the bulk diffusion of Cu tracers in non-stoichiometric CuInSe2.

  20. Interfacial Reaction of Sn-Ag-Cu Lead-Free Solder Alloy on Cu: A Review

    Directory of Open Access Journals (Sweden)

    Liu Mei Lee

    2013-01-01

    Full Text Available This paper reviews the function and importance of Sn-Ag-Cu solder alloys in electronics industry and the interfacial reaction of Sn-Ag-Cu/Cu solder joint at various solder forms and solder reflow conditions. The Sn-Ag-Cu solder alloys are examined in bulk and in thin film. It then examines the effect of soldering conditions to the formation of intermetallic compounds such as Cu substrate selection, structural phases, morphology evolution, the growth kinetics, temperature and time is also discussed. Sn-Ag-Cu lead-free solder alloys are the most promising candidate for the replacement of Sn-Pb solders in modern microelectronic technology. Sn-Ag-Cu solders could possibly be considered and adapted in miniaturization technologies. Therefore, this paper should be of great interest to a large selection of electronics interconnect materials, reliability, processes, and assembly community.

  1. Magnetron sputtered Cu{sub 3}N/NiTiCu shape memory thin film heterostructures for MEMS applications

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Navjot; Choudhary, Nitin [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Goyal, Rajendra N. [Indian Institute of Technology, Roorkee, Department of Chemistry (India); Viladkar, S. [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Matai, I.; Gopinath, P. [Indian Institute of Technology, Roorkee, Centre for Nanotechnology (India); Chockalingam, S. [Indian Institute of Technology, Guwahati, Department of Biotechnology (India); Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India)

    2013-03-15

    In the present study, for the first time, Cu{sub 3}N/NiTiCu/Si heterostructures were successfully grown using magnetron sputtering technique. Nanocrystalline copper nitride (Cu{sub 3}N with thickness {approx}200 nm) thin films and copper nanodots were subsequently deposited on the surface of 2-{mu}m-thick NiTiCu shape memory thin films in order to improve the surface corrosion and nickel release properties of NiTiCu thin films. Interestingly, the phase transformation from martensite phase to austenite phase has been observed in Cu{sub 3}N/NiTiCu heterostructures with corresponding change in texture and surface morphology of top Cu{sub 3}N films. Field emission scanning electron microscopy and atomic force microscope images of the heterostructures reveals the formation of 20-nm-sized copper nanodots on NiTiCu surface at higher deposition temperature (450 Degree-Sign C) of Cu{sub 3}N. Cu{sub 3}N passivated NiTiCu films possess low corrosion current density with higher corrosion potential and, therefore, better corrosion resistance as compared to pure NiTiCu films. The concentration of Ni released from the Cu{sub 3}N/NiTiCu samples was observed to be much less than that of pure NiTiCu film. It can be reduced to the factor of about one-ninth after the surface passivation resulting in smooth, homogeneous and highly corrosion resistant surface. The antibacterial and cytotoxicity of pure and Cu{sub 3}N coated NiTiCu thin films were investigated through green fluorescent protein expressing E. coli bacteria and human embryonic kidney cells. The results show the strong antibacterial property and non cytotoxicity of Cu{sub 3}N/NiTiCu heterostructure. This work is of immense technological importance due to variety of BioMEMS applications.

  2. Cohesive zone modelling of wafer bonding and fracture: effect of patterning and toughness variations

    Science.gov (United States)

    Kubair, D. V.; Spearing, S. M.

    2006-03-01

    Direct wafer bonding has increasingly become popular in the manufacture of microelectromechanical systems and semiconductor microelectronics components. The success of the bonding process is controlled by variables such as wafer flatness and surface preparation. In order to understand the effects of these variables, spontaneous planar crack propagation simulations were performed using the spectral scheme in conjunction with a cohesive zone model. The fracture-toughness on the bond interface is varied to simulate the effect of surface roughness (nanotopography) and patterning. Our analysis indicated that the energetics of crack propagation is sensitive to the local surface property variations. The patterned wafers are tougher (well bonded) than the unpatterned ones of the same average fracture-toughness.

  3. Facile synthesis of dendritic Cu by electroless reaction of Cu-Al alloys in multiphase solution

    Science.gov (United States)

    Wang, Ying; Liang, Shuhua; Yang, Qing; Wang, Xianhui

    2016-11-01

    Two-dimensional nano- or micro-scale fractal dendritic coppers (FDCs) were synthesized by electroless immersing of Cu-Al alloys in hydrochloric acid solution containing copper chloride without any assistance of template or surfactant. The FDC size increases with the increase of Al content in Cu-Al alloys immersed in CuCl2 + HCl solution. Compared to Cu40Al60 and Cu45Al55 alloys, the FDC shows hierarchical distribution and homogeneous structures using Cu17Al83 alloy as the starting alloy. The growth direction of the FDC is , and all angles between the trunks and branches are 60°. Nanoscale Cu2O was found at the edge of FDC. Interestingly, nanoporous copper (NPC) can also be obtained through Cu17Al83 alloy. Studies showed that the formation of FDC depended on two key factors: the potential difference between CuAl2 intermetallic and α-Al phase of dual-phase Cu-Al alloys; a replacement reaction that usually occurs in multiphase solution. The electrochemical experiment further proved that the multi-branch dendritic structure is very beneficial to the proton transfer in the process of catalyzing methanol.

  4. Wafer-Level Packaging Method for RF MEMS Applications Using Pre-Patterned BCB Polymer

    OpenAIRE

    Zhuhao Gong; Yulong Zhang; Xin Guo; Zewen Liu

    2018-01-01

    A radio-frequency micro-electro-mechanical system (RF MEMS) wafer-level packaging (WLP) method using pre-patterned benzo-cyclo-butene (BCB) polymers with a high-resistivity silicon cap is proposed to achieve high bonding quality and excellent RF performance. In this process, the BCB polymer was pre-defined to form the sealing ring and bonding layer by the spin-coating and patterning of photosensitive BCB before the cavity formation. During anisotropic wet etching of the silicon wafer to gener...

  5. Correlation between electronic structure and energy band in Eu-doped CuInTe2 semiconductor compound with chalcopyrite structure

    Institute of Scientific and Technical Information of China (English)

    Tai Wang; Yong-Quan Guo; Shuai Li

    2017-01-01

    The Eu-doped Cu(In,Eu)Te2 semiconductors with chalcopyrite structures are promising materials for their applications in the absorption layer for thin-film solar cells due to their wider band-gaps and better optical properties than those of CulnTe2.In this paper,the Eu-doped CulnTe2 (Culn1-xEuxTe2,x =0,0.1,0.2,0.3) are studied systemically based on the empirical electron theory (EET).The studies cover crystal structures,bonding regularities,cohesive energies,energy levels,and valence electron structures.The theoretical values fit the experimental results very well.The physical mechanism of a broadened band-gap induced by Eu doping into CuInTe2 is the transitions between different hybridization energy levels induced by electron hopping between s and d orbitals and the transformations from the lattice electrons to valence electrons for Cu and In ions.The research results reveal that the photovoltaic effect induces the increase of lattice electrons of In and causes the electric resistivity to decrease.The Eu doping into CuInTe2 mainly influences the transition between different hybridization energy levels for Cu atoms,which shows that the 3d electron numbers of Cu atoms change before and after Eu doping.In single phase CuIn1-xEuxTe2,the number of valence electrons changes regularly with increasing Eu content,and the calculated band gap Eg also increases,which implies that the optical properties of Eu-doped CuIn1-xEuxTe2 are improved.

  6. Li{sub 12}Cu{sub 12.60}Al{sub 14.37}. A new ternary derivative of the binary Laves phases

    Energy Technology Data Exchange (ETDEWEB)

    Pavlyuk, Volodymyr [Ivan Franko Lviv National Univ. (Ukraine). Dept. of Inorganic Chemistry; Jan Dlugosz Univ., Czestochowa (Poland). Inst. of Chemistry, Environment Protection and Biotechnology; Dmytriv, Grygoriy; Tarasiuk, Ivan [Ivan Franko Lviv National Univ. (Ukraine). Dept. of Inorganic Chemistry; Chumak, Ihor [IFW Dresden (Germany); Ehrenberg, Helmut [Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany). Inorganic Chemistry

    2011-12-15

    New ternary dodecalithium dodecacopper tetradecaaluminium, Li{sub 12}Cu{sub 12.60}Al{sub 14.37} (trigonal, R anti 3m, hR39), crystallizes as a new structure type and belongs to the structural family that derives from binary Laves phases. The Li atoms are enclosed in 15- and 16-vertex and the Al3 atom in 14-vertex pseudo-Frank-Kasper polyhedra. The polyhedra around the statistical mixtures of (Cu,Al)1 and (Al,Cu)2 are distorted icosahedra. The electronic structure was calculated by the TB- LMTO-ASA (tight-binding linear muffin-tin orbital atomic spheres approximation) method. The electron localization function, which indicates bond formation, is mostly located at the Al atoms. Thus, Al-Al bonding is much stronger than Li-Al or Cu-Al bonding. This indicates that, besides metallic bonding which is dominant in this compound, weak covalent Al-Al interactions also exist. (orig.)

  7. Comparative study of structural and morphological properties of CuIn{sub 3}S{sub 5} and CuIn{sub 7}S{sub 11} materials

    Energy Technology Data Exchange (ETDEWEB)

    Khemiri, N., E-mail: naoufel_khemiri@yahoo.f [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs, ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs, ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

    2010-02-15

    CuIn{sub 3}S{sub 5} and CuIn{sub 7}S{sub 11} powders were prepared by solid-state reaction method using high-purity elemental copper, indium and sulphur. The films prepared from CuIn{sub 3}S{sub 5} and CuIn{sub 7}S{sub 11} powders were grown by thermal evaporation under vacuum (10{sup -6} Torr) on glass substrates at different substrate temperature Ts varying from room temperature to 200 deg. C. The powders and thin films were characterized for their structural properties by using X-ray diffraction (XRD) and energy dispersive X-ray (EDX). Both powders were polycrystalline with chalcopyrite and spinel structure, respectively. From the XRD data, we calculated the lattice parameters of the structure for the compounds. For CuIn{sub 3}S{sub 5} powder, we also calculated the cation-anion bond lengths. The effect of substrate temperature Ts on the structural properties of the films, such as crystal phase, preferred orientation and crystallinity was investigated. Indeed, X-ray diffraction analysis revealed that the films deposited at a room temperature (30 deg. C) are amorphous in nature while those deposited on heated were polycrystalline with a preferred orientation along (1 1 2) of the chalcopyrite phase and (3 1 1) of the spinel phase for CuIn{sub 3}S{sub 5} and CuIn{sub 7}S{sub 11} films prepared from powders, respectively. The morphology of the films was determined by atomic force microscopy AFM. The surface roughness and the grain size of the films increase on increasing the substrate temperature.

  8. Recycled tetrahedron-like CuCl from waste Cu scraps for lithium ion battery anode.

    Science.gov (United States)

    Hou, Hongying; Yao, Yuan; Liu, Song; Duan, Jixiang; Liao, Qishu; Yu, Chengyi; Li, Dongdong; Dai, Zhipeng

    2017-07-01

    The wide applications of metal Cu inevitably resulted in a large quantity of waste Cu materials. In order to recover the useful Cu under the mild conditions and reduce the environmental emission, waste Cu scraps were recycled in the form of CuCl powders with high economic value added (EVA) via the facile hydrothermal route. The recycled CuCl powders were characterized in terms of scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The results suggested that the recycled CuCl powders consisted of many regular tetrahedron-like micro-particles. Furthermore, in order to reduce the cost of lithium ion battery (LIB) anode and build the connection of waste Cu scraps and LIB, the recycled CuCl powders were evaluated as the anode active material of LIB. As expected, the reversible discharge capacity was about 171.8mAh/g at 2.0C even after 50 cycles, implying the satisfactory cycle stability. Clearly, the satisfactory results may open a new avenue to develop the circular economy and the sustainable energy industry, which would be very important in terms of both the resource recovery and the environmental protection. Copyright © 2017. Published by Elsevier Ltd.

  9. The oxidation states of elements in pure and Ca-doped BiCuSeO thermoelectric oxides

    International Nuclear Information System (INIS)

    Hsiao, Chun-Lung; Qi, Xiaoding

    2016-01-01

    Bi 1−x Ca x CuSeO (x = 0–0.3) was synthesized at 650 °C in an air-tight system flowing with pure argon. The Ca doping resulted in an increase in the thermoelectric figure of merit (ZT) as the consequence of increased carrier concentration. X-ray photoelectron spectroscopy (XPS) was carried out to check the oxidation states in Bi 1−x Ca x CuSeO. The results indicated that in addition to the expected Bi 3+ and Cu 1+ , there existed Bi 2+ and Cu 2+ in the undoped BiCuSeO, whereas in the Ca-doped BiCuSeO, Bi 4+ , Cu 3+ and Cu 2+ were observed. The Ca dopant was confirmed to be in the 2+ oxidation state. Two broad peaks centered at 54.22 and 58.59 eV were recorded in the vicinity around the binding energy of Se 3d. The former is often observed in the Se-containing intermetallics while the latter is often found in the Se-containing oxides, indicating that along with the expected Se–Cu bonding, a bonding between Se and O may also exist. Based on the XPS results, the charge compensation mechanisms were proposed for Bi 1−x Ca x CuSeO, which may shed some light on the origins of charge carriers. BiCuSeO based oxides have recently be discovered to have a large ZT comparable to the best alloys currently in use, because of the large Seebeck coefficient and small thermal conductivity. However, their electrical conductivity is lower compared to the best thermoelectrics. This work may provide some hints for the further improvement of ZT in BiCuSeO based oxides. - Graphical abstract: The oxidation states, charge compensation mechanisms, and origins of charge carriers in Bi 1−x Ca x CuSeO thermoelectrics. Display Omitted

  10. Effect of Cu content on wear resistance and mechanical behavior of Ti-Cu binary alloys

    Science.gov (United States)

    Yu, Feifei; Wang, Hefeng; Yuan, Guozheng; Shu, Xuefeng

    2017-04-01

    Arc melting with nonconsumable tungsten electrode and water-cooled copper crucible was used to fabricate Ti-Cu binary alloys with different Cu contents in an argon atmosphere. The compositions and phase structures of the fabricated alloys were investigated by glow discharge optical emission spectroscopy (GDOES) and X-ray diffraction (XRD). Nanoindentation tests through continuous stiffness measurement were then performed at room temperature to analyze the mechanical behaviors of the alloys. Results indicated that the composition of each Ti-Cu binary alloy was Ti(100- x) Cu x ( x = 43, 60, 69, and 74 at.%). The XRD analysis results showed that the alloys were composed of different phases, indicating that different Cu contents led to the variations in alloy hardness. The wear tests results revealed that elemental Cu positively affects the wear resistance properties of the Ti-Cu alloys. Nanoindentation testing results showed that the moduli of the Ti-Cu alloys were minimally changed at increasing Cu content, whereas their hardness evidently increased according to the wear test results.

  11. Photoemission studies of zinc-noble metal alloys: Zn--Cu, Zn--Ag, and Zn--Au films on Ru(001)

    International Nuclear Information System (INIS)

    Rodriguez, J.A.; Hrbek, J.

    1993-01-01

    Zn and the noble metals alloy when coadsorbed on Ru(001). The properties of Zn--Cu, Zn--Ag, and Zn--Au alloys have been studied using core- and valence-level photoemission and temperature programmed desorption. Alloy formation induces only small shifts (-0.2 to -0.3 eV) in the position of the Zn 2p, 3s, and 3d levels. In contrast, the core and valence levels of the noble metals show large shifts toward higher binding energy. For small amounts of Cu, Ag, and Au dissolved in Zn multilayers, the shifts in the core levels of the nobel metals follow the sequence: Cu(2p 3/2 ), 0.8 eV∼Ag(3d 5/2 ), 0.8 eV 7/2 ), 1.4 eV. The magnitude of the shift increases as the Pauling electronegativity of the noble metal increases. However, the sign of the shifts for the Cu(2p 3/2 ), Ag(3d 5/2 ), or Au(4f 7/2 ) levels is not directly determined by the direction of charge transfer within the corresponding Zn-noble metal bond

  12. Hot Deformation Behavior and Processing Maps of Diamond/Cu Composites

    Science.gov (United States)

    Zhang, Hongdi; Liu, Yue; Zhang, Fan; Zhang, Di; Zhu, Hanxing; Fan, Tongxiang

    2018-06-01

    The hot deformation behaviors of 50 vol pct uncoated and Cr-coated diamond/Cu composites were investigated using hot isothermal compression tests under the temperature and strain rate ranging from 1073 K to 1273 K (800 °C to 1000 °C) and from 0.001 to 5 s-1, respectively. Dynamic recrystallization was determined to be the primary restoration mechanism during deformation. The Cr3C2 coating enhanced the interfacial bonding and resulted in a larger flow stress for the Cr-coated diamond/Cu composites. Moreover, the enhanced interfacial affinity led to a higher activation energy for the Cr-coated diamond/Cu composites (238 kJ/mol) than for their uncoated counterparts (205 kJ/mol). The strain-rate-dependent constitutive equations of the diamond/Cu composites were derived based on the Arrhenius model, and a high correlation ( R = 0.99) was observed between the calculated flow stresses and experimental data. With the help of processing maps, hot extrusions were realized at 1123 K/0.01 s-1 and 1153 K/0.01 s-1 (850 °C/0.01 s-1 and 880 °C/0.01 s-1) for the uncoated and coated diamond/Cu composites, respectively. The combination of interface optimization and hot extrusion led to increases of the density and thermal conductivity, thereby providing a promising route for the fabrication of diamond/Cu composites.

  13. CuAlO2 and CuAl2O4 thin films obtained by stacking Cu and Al films using physical vapor deposition

    Science.gov (United States)

    Castillo-Hernández, G.; Mayén-Hernández, S.; Castaño-Tostado, E.; DeMoure-Flores, F.; Campos-González, E.; Martínez-Alonso, C.; Santos-Cruz, J.

    2018-06-01

    CuAlO2 and CuAl2O4 thin films were synthesized by the deposition of the precursor metals using the physical vapor deposition technique and subsequent annealing. Annealing was carried out for 4-6 h in open and nitrogen atmospheres respectively at temperatures of 900-1000 °C with control of heating and cooling ramps. The band gap measurements ranged from 3.3 to 4.5 eV. Electrical properties were measured using the van der Pauw technique. The preferred orientations of CuAlO2 and CuAl2O4 were found to be along the (1 1 2) and (3 1 1) planes, respectively. The phase percentages were quantified using a Rietveld refinement simulation and the energy dispersive X-ray spectroscopy indicated that the composition is very close to the stoichiometry of CuAlO2 samples and with excess of aluminum and deficiency of copper for CuAl2O4 respectively. High resolution transmission electron microscopy identified the principal planes in CuAlO2 and in CuAl2O4. Higher purities were achieved in nitrogen atmosphere with the control of the cooling ramps.

  14. Interactions between C and Cu atoms in single-layer graphene: direct observation and modelling.

    Science.gov (United States)

    Kano, Emi; Hashimoto, Ayako; Kaneko, Tomoaki; Tajima, Nobuo; Ohno, Takahisa; Takeguchi, Masaki

    2016-01-07

    Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene.

  15. Vibrational spectroscopic and theoretical study of 3,5-dimethyl-1-thiocarboxamide pyrazole (L) and the complexes Co2L2Cl4, Cu2L2Cl4 and Cu2L2Br2

    International Nuclear Information System (INIS)

    Nemcsok, Denes; Kovacs, Attila; Szecsenyi, Katalin Meszaros; Leovac, Vukadin M.

    2006-01-01

    In the present paper we report a joint experimental and theoretical study of 3,5-dimethyl-1-thiocarboxamide pyrazole (L) and its complexes Co 2 L 2 Cl 4 , Cu 2 L 2 Cl 4 and Cu 2 L 2 Br 2 . DFT computations were used to model the structural and bonding properties of the title compounds as well as to derive a reliable force field for the normal coordinate analysis of L. The computations indicated the importance of hydrogen bonding interactions in stabilising the global minimum structures on the potential energy surfaces. In contrast to the S-bridged binuclear Cu 2 L 2 Br 2 complex found in the crystal, our computations predicted the formation of (CuLBr) 2 dimers in the isolated state stabilized by very strong (53 kJ/mol) N-H...Br hydrogen bonding interactions. On the basis of FT-IR and FT-Raman experiments and the DFT-derived scaled quantum mechanical force field we carried out a complete normal coordinate analysis of L. The FT-IR spectra of the three complexes were interpreted using the present assignment of L, literature data and computed results

  16. Nitrite to nitric oxide interconversion by heme FeII complex assisted by [CuI(tmpa)]+

    KAUST Repository

    Turias, Francesc; Solà , Miquel; Falivene, Laura; Cavallo, Luigi; Poater, Albert

    2015-01-01

    The present computational study complements the recent experimental efforts by Karlin and coworkers to describe the interconversion of nitrite to nitric oxide by means of an iron porphyrin complex together with a Cu chemical system, i.e., the iron(II) complex (F8TPP)FeII [F8TPP = tetrakis(2,6-difluorophenyl)porphyrinate(2−)] and a preformed copper(II)–nitrito complex [(tmpa)CuII(NO2)][B(C6F5)4] [tmpa = tris(2-pyridylmethyl)amine], being the latter an oxidized species of [(tmpa)CuI(MeCN)]+. By DFT calculations, we unravel how the reduction of nitrite to nitric oxide takes place through a μ-oxo heme-FeIII–O–CuII complex, following a mimetic path as in the cytochrome c oxidase. Mayer bond order (MBO) and energy decomposition analyses are used to analyze the bonding strength of such nitro derivatives to either copper or iron. © 2015 Springer Science+Business Media New York

  17. Nitrite to nitric oxide interconversion by heme FeII complex assisted by [CuI(tmpa)]+

    KAUST Repository

    Turias, Francesc

    2015-09-09

    The present computational study complements the recent experimental efforts by Karlin and coworkers to describe the interconversion of nitrite to nitric oxide by means of an iron porphyrin complex together with a Cu chemical system, i.e., the iron(II) complex (F8TPP)FeII [F8TPP = tetrakis(2,6-difluorophenyl)porphyrinate(2−)] and a preformed copper(II)–nitrito complex [(tmpa)CuII(NO2)][B(C6F5)4] [tmpa = tris(2-pyridylmethyl)amine], being the latter an oxidized species of [(tmpa)CuI(MeCN)]+. By DFT calculations, we unravel how the reduction of nitrite to nitric oxide takes place through a μ-oxo heme-FeIII–O–CuII complex, following a mimetic path as in the cytochrome c oxidase. Mayer bond order (MBO) and energy decomposition analyses are used to analyze the bonding strength of such nitro derivatives to either copper or iron. © 2015 Springer Science+Business Media New York

  18. Thermal gravimetric analysis of the CsCuCl3, Cs2CuCl4 and Cs2CuCl4x2H2O crystals

    International Nuclear Information System (INIS)

    Soboleva, L.V.; Vasil'eva, M.G.

    1977-01-01

    The thermal characteristics of crystals of Cs 2 CuCl 4 , Cs 2 CuCl 4 x2H 2 O, and CsCuCl 3 were investigated thermogravimetrically. The derivatogram of the Cs 2 CuCl 4 crystal is characterized by the presence of a single endothermal effect at 505 deg C. The derivatogram of the Cs 2 CuCl 4 x2H 2 O crystal contains three endothermal effects: at 40, 135, and 480 deg C. The derivatogram of the CsCuCl 3 crystal shows the presence of two endothermal effects at 142 and 455 deg C. The thermogravimetric data on Cs 2 CuCl 4 and CsCuCl 3 crystals reveal crystal decomposition on melting; hence, these crystals cannot be grown from melts

  19. Structural role of Cu in the soil active glasses

    Directory of Open Access Journals (Sweden)

    Irena Wacławska

    2012-06-01

    Full Text Available Glasses from the SiO2-P2O5-K2O-CaO-MgO-CuO system acting as slow release fertilizers were synthesized by the melt-quenching technique. Influence of copper addition on structure of the glasses was evaluated by XRD, SEM, FT-IR and Raman spectroscopy. Chemical activity of the glasses in 2 wt.% citric acid solutions was measured by ICP-AES method. It has been found that increasing content of phosphorous increased solubility of copper in the structure of the studied glasses which was the result of formation of P-O-Cu bonds.

  20. Stark broadening in the laser-induced Cu I and Cu II spectra

    International Nuclear Information System (INIS)

    Skočić, M; Burger, M; Nikolić, Z; Bukvić, S; Djeniže, S

    2013-01-01

    In this work we present the Stark widths (W) of 22 neutral (Cu I) and 100 singly ionized (Cu II) copper spectral lines that have been measured at 18 400 K and 19 300 K electron temperatures and 6.3 × 10  22 m −3 and 2.1 × 10  23 m −3 electron densities, respectively. The experiment is conducted in the laser-induced plasma—the Nd:YAG laser, operating at 532 nm, was used to produce plasma from the copper sample in the residual air atmosphere at a pressure of 8 Pa. The electron temperature and density were estimated by the Boltzmann-plot method and from the Saha equation. The investigated Cu I lines belong to the 4s–4p′, 4s  2 –4p″ and 4p′–4d′ transitions while Cu II spectral lines belong to the 4s–4p, 4p–5s, 4p–4d, 4p–4s  2 , 4d–4f and 4d–v transitions. Comparison with existing experimental data was possible only in the case of 17 Cu II lines due to a lack of experimental and theoretical values. The rest of the data, Stark widths of 22 Cu I and 83 Cu II lines are published for the first time. (paper)

  1. Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Franczak, Agnieszka, E-mail: agnieszka.franczak@mtm.kuleuven.be [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Department of Materials Science (MTM), KU Leuven, Kasteelpark Arenberg 44, 3001 Haverlee (Leuven) (Belgium); Levesque, Alexandra [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Zabinski, Piotr [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Li, Donggang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 314 Box, 110004 Shenyang (China); Czapkiewicz, Maciej [Department of Electronics, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Kowalik, Remigiusz [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Bohr, Frédéric [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); and others

    2015-07-15

    The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits.

  2. Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

    International Nuclear Information System (INIS)

    Franczak, Agnieszka; Levesque, Alexandra; Zabinski, Piotr; Li, Donggang; Czapkiewicz, Maciej; Kowalik, Remigiusz; Bohr, Frédéric

    2015-01-01

    The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits

  3. Effects of Cu content on the photoelectrochemistry of Cu2ZnSnS4 nanocrystal thin films

    International Nuclear Information System (INIS)

    Khoshmashrab, Saghar; Turnbull, Matthew J.; Vaccarello, Daniel; Nie, Yuting; Martin, Spencer; Love, David A.; Lau, Po K.; Sun, Xuhui; Ding, Zhifeng

    2015-01-01

    Highlights: • Two compositions of CZTS were synthesized, one yielding Cu-poor and the other Cu-stoichiometric nanocrystals (NCs). • Physical and electronic properties of both films were probed using various analytical techniques. • Films comprised of Cu-poor CZTS showed tighter packing with less defects compared to those of stoichiometric-Cu. • Photoelectrochemical measurements exhibited increased photoconversion and increased photostability of the Cu-poor films. • Intensity modulated photocurrent spectroscopy showed that the Cu-deficient NCs had half the recombination rate as that of stoichiometric-Cu films. - Abstract: Cu 2 ZnSnS 4 (CZTS) nanocrystals (NCs) were prepared via a one-pot solvothermal method. Given that the composition affects the electronic properties of this p-type semiconductor, two compositional ratios were chosen from 10 designed and synthesized analogues, one yielding Cu-poor and the other Cu-stoichiometric CZTS. NCs in which the Cu concentration was slightly below stoichiometric yielded more uniform films with greater photovoltaic performance. The lower Cu content also lead to slightly better crystallinity within the film, as demonstrated by XRD, Raman spectroscopy and transmission electron microscopy. Chronophotoelectrochemical measurements indicated that both types of NC films displayed good stability; however, with a decrease in potential, an increase in resistance for the Cu-stoichiometric film was observed. As determined by intensity modulated photocurrent spectroscopy, the product separation rate of the photoinduced holes and electrons in the Cu-poor films were more than 3 times that of the Cu-stoichiometric, confirming that the lower Cu content led to an improved photoperformance

  4. Halo and Pseudohalo Cu(I)-Pyridinato Double Chains with Tunable Physical Properties.

    Science.gov (United States)

    Hassanein, K; Amo-Ochoa, P; Gómez-García, C J; Delgado, S; Castillo, O; Ocón, P; Martínez, J I; Perles, J; Zamora, F

    2015-11-16

    The properties recently reported on the Cu(I)-iodide pyrimidine nonporous 1D-coordination polymer [CuI(ANP)]n (ANP = 2-amino-5-nitropyridine) showing reversible physically and chemically driven electrical response have prompted us to carry a comparative study with the series of [CuX(ANP)]n (X = Cl (1), X = Br (2), X = CN (4), and X = SCN (5)) in order to understand the potential influence of the halide and pseudohalide bridging ligands on the physical properties and their electrical response to vapors of these materials. The structural characterization of the series shows a common feature, the presence of -X-Cu(ANP)-X- (X = Cl, Br, I, SCN) double chain structure. Complex [Cu(ANP)(CN)]n (4) presents a helical single chain. Additionally, the chains show supramolecular interlinked interactions via hydrogen bonding giving rise to the formation of extended networks. Their luminescent and electrical properties have been studied. The results obtained have been correlated with structural changes. Furthermore, the experimental and theoretical results have been compared using the density functional theory (DFT). The electrical response of the materials has been evaluated in the presence of vapors of diethyl ether, dimethyl methylphosphonate (DMMP), CH2Cl2, HAcO, MeOH, and EtOH, to build up simple prototype devices for gas detectors. Selectivity toward gases consisting of molecules with H-bonding donor or acceptor groups is clearly observed. This selective molecular recognition is likely due to the 2-amino-5-nitropyridine terminal ligand.

  5. Comparative Compton scattering studies in Cu2O and Ag2O

    International Nuclear Information System (INIS)

    Bandyopadhyay, S.; Chatterjee, A.K.; Saha, S.K.; Chatterjee, A.

    1994-01-01

    Compton scattering studies in polycrystalline Cu 2 O and Ag 2 O with 59.54 keV γ radiation are reported. A comparison has been made between the valance Compton profiles of these two components scaled to lattice momentum by normalizing them to equal electron density for outer valence electrons, and this comparison shows some differences between the bonding characters of Cu 2 O and Ag 2 O. (author)

  6. Enhancement in visible light photocatalytic activity by embedding Cu nanoparticles over CuS/MCM-41 nanocomposite

    Science.gov (United States)

    Sohrabnezhad, Sh.; Karamzadeh, M.

    2017-07-01

    This article indicate the biogenic synthesis of copper nanoparticles (Cu NPs) using the borage flowers extract of Borago officinalis over CuS/MCM-41 nanocomposite (NC). No external reducing was utilized in the developed method. The CuS-MCM-41 NC was used as stabilizing agent. The synthesis of CuS nanostructure in MCM-41 material has been realized by hydrothermal method. Their physiochemical properties have been characterized by X-ray diffraction, transmission electron microscopy (TEM), UV-Visible diffuse reflectance spectroscopy, and Fourier transform infrared spectroscopy. On the basis of TEM images, a layer of Cu NPs has been located over CuS/MCM-41 NC with average diameter of 60-80 nm. The results revealed the spherical nature of the prepared Cu NPs with diameter less than 10 nm. The DR spectra of Cu NPs in MCM-41 and CuS-MCM-41 NCs showed surface plasmon resonance bands at 570 and 500-600 nm, respectively. The photocatalytic activity was evaluated under visible light irradiation using the photocatalytic degradation of methylene blue (MB) as a model reaction. The prepared Cu/CuS/MCM-41 nanocomposite microspheres showed higher photodegradation ability for MB than CuS/MCM-41. The degradation of MB achieved up to 80% after 60 min and the nanocomposite could be recycled and reused.

  7. Investigating the atomic level influencing factors of glass forming ability in NiAl and CuZr metallic glasses

    Energy Technology Data Exchange (ETDEWEB)

    Sedighi, Sina; Kirk, Donald Walter; Singh, Chandra Veer, E-mail: chandraveer.singh@utoronto.ca; Thorpe, Steven John [Department of Materials Science and Engineering, University of Toronto, Room 140, 184 College Street, Toronto, Ontario M5S 3E4 (Canada)

    2015-09-21

    Bulk metallic glasses are a relatively new class of amorphous metal alloy which possess unique mechanical and magnetic properties. The specific concentrations and combinations of alloy elements needed to prevent crystallization during melt quenching remains poorly understood. A correlation between atomic properties that can explain some of the previously identified glass forming ability (GFA) anomalies of the NiAl and CuZr systems has been identified, with these findings likely extensible to other transition metal–transition metal and transition metal–metalloid (TM–M) alloy classes as a whole. In this work, molecular dynamics simulation methods are utilized to study thermodynamic, kinetic, and structural properties of equiatomic CuZr and NiAl metallic glasses in an attempt to further understand the underlying connections between glass forming ability, nature of atomic level bonding, short and medium range ordering, and the evolution of structure and relaxation properties in the disordered phase. The anomalous breakdown of the fragility parameter as a useful GFA indicator in TM–M alloy systems is addressed through an in-depth investigation of bulk stiffness properties and the evolution of (pseudo)Gruneisen parameters over the quench domain, with the efficacy of other common glass forming ability indicators similarly being analyzed through direct computation in respective CuZr and NiAl systems. Comparison of fractional liquid-crystal density differences in the two systems revealed 2-3 times higher values for the NiAl system, providing further support for its efficacy as a general purpose GFA indicator.

  8. Diffusion and adhesion properties of Cu films on polyimide substrates

    International Nuclear Information System (INIS)

    Liang, T.X.; Liu, Y.Q.; Fu, Z.Q.; Luo, T.Y.; Zhang, K.Y.

    2005-01-01

    Copper thin films were prepared on polyimide (PI) substrates by physical vapor deposition (PVD) and chemical vapor deposition (CVD). Titanium nitride (TiN) diffusion barrier layers were deposited between the copper films and the PI substrates by PVD. Auger electron spectroscopy compositional depth profile showed that TiN barrier layer was very effective in preventing copper diffusion into PI substrate even after the Cu/TiN/PI samples were annealed at 300 deg. C for 5 h. For the as-deposited CVD-Cu/PI, CVD-Cu/TiN/PI, and as-deposited PVD-Cu/PI samples, the residual stress in Cu films was very small. Relatively larger residual stress existed in Cu films for PVD-Cu/TiN/PI samples. For PVD-Cu/TiN/PI samples, annealing can increase the peeling strength to the level observed without a diffusion barrier. The adhesion improvement of Cu films by annealing treatment can be attributed to lowering of the residual tensile stress in Cu films

  9. Growth and characterization of NixCu1-x alloy films, NixCu1-x/NiyCu1-y multilayers, and nanowires

    International Nuclear Information System (INIS)

    Kazeminezhad, I.

    2001-12-01

    It was found that it is possible to grow Ni x Cu 1-x alloy systems of arbitrary composition by electrodepositing well-defined sub-monolayer quantities of Ni and Cu in alternation using a new method based on that used previously to prepare potentiostatically deposited magnetic multilayers from a single sulphamate-based electrolyte. Following growth, the chemical composition of Ni x Cu 1-x alloy films was obtained by ZAF-corrected energy dispersive X-Ray (EDX) analysis and less than a 4% difference between the nominal and actual composition was observed. The structure of the films was investigated by high-angle X-ray diffractometry (HAXRD) and transmission electron microscopy (TEM). The films grown on polycrystalline Cu substrates had (100) texture, while those grown on Au-coated glass had (111) texture. Some evidence of Ni clustering was obtained by vibrating sample magnetometry (VSM). Self-organisation of the deposited metal was suggested for Ni potentials more positive than ∼-1.4V. The transition from a Ni/Cu multilayer to a Ni x Cu 1-x alloy was also studied and an interesting aspect, namely a plateau region in a plot of magnetisation as a function of Ni layer thickness was observed, suggesting a preferred Ni cluster size in these alloy films. Anisotropic magnetoresistance (AMR) of the films decreased with increasing Cu content at 300K and 77K. SQUID measurements for Ni 0.52 Cu 0.48 and Ni 0.62 CU 0.38 films showed that they become much more strongly ferromagnetic at low temperatures. Evidence for blocked -superparamagnetic behaviour above a blocking temperature (T B ) of the films was obtained from zero-field-cooled (ZFC) and field-cooled (FC) magnetic susceptibility measurements. Ni x Cu 1-x /Ni y Cu 1-y alloy/alloy multilayer films with short repeat distance were successfully fabricated using this method. Up to third order satellite peaks observed in HAXRD showed that the interface is sharp. Room temperature longitudinal magnetoresistance measurements showed

  10. First-principles study of electronic structure of CuSbS{sub 2} and CuSbSe{sub 2} photovoltaic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Maeda, T., E-mail: tmaeda@ad.ryukoku.ac.jp; Wada, T.

    2015-05-01

    We studied the features of CuSbS{sub 2} (CAS) and CuSbSe{sub 2} (CASe), two proposed photovoltaic compounds, and clarified their electronic structures by first-principles calculations and compared them to the chalcopyrite-type CuInSe{sub 2} results. For both CAS and CASe, the calculated enthalpies of formation of the chalcostibite phases were considerably lower than those of the chalcopyrite phases. Therefore, we considered that the chalcostibite phase is more stable for CAS and CASe. In their band structure calculated with the HSE06 hybrid functional, the valence band maxima of CAS and CASe were located at the Γ-point, and the conduction band minima were located at the R-point. Their second lowest conduction band was located at the Γ-point, whose energy level nearly equaled the R-point. For CAS (CASe), the partial density of the states shows the character of the Cu 3d and S 3p (Se 4p) orbitals at the top of the valence bands and the Sb 5p and S 3p (Se 4p) orbitals at the bottom of the conduction bands. The conduction bands of CAS and CASe have a p-orbital character (Sb 5p) that differs from the s-orbital character (In 5s) of CuInSe{sub 2}. It is for the reason that CAS and CASe do not have a chalcopyrite structure but a chalcostibite-type structure. The calculated absorption coefficient of CuSbS{sub 2} (10{sup 4}-10{sup 5} cm{sup −1}) is comparable to that of CuInSe{sub 2}. - Highlights: • We studied the features of CuSbS{sub 2} and CuSbSe{sub 2}, newly proposed photovoltaic compounds. • Chalcostibite phase is more stable in CuSbS{sub 2} and CuSbSe{sub 2}. • Band structures of CuSbS{sub 2} and CuSbS{sub 2} were calculated with HSE06 hybrid functional. • Absorption coefficient of chalcostibite-type CuSbS{sub 2} is comparable to that of CuInSe{sub 2}.

  11. Cu-modified alkalinized g-C3N4 as photocatalytically assisted heterogeneous Fenton-like catalyst

    Science.gov (United States)

    Dong, Qimei; Chen, Yingying; Wang, Lingli; Ai, Shasha; Ding, Hanming

    2017-12-01

    Alkalinized graphitic carbon nitride (CNK-OH) has been synthesized by one-step thermal poly-condensation method, and Cu-modified alkalinized g-C3N4 (Cu-CNK-OH) has been prepared by impregnation approach over CNK-OH. These copper species in Cu-CNK-OH are embedded in the frame of CNK-OH mostly via the Cu-N bonds. Cu-CNK-OH has been employed as a heterogeneous Fenton-like catalyst to degrade rhodamine B (RhB). Both the production efficiency of hydroxyl radicals and the transformation rate of Cu(II)/Cu(I) redox pair increase under visible-light irradiation. As a result, Cu-CNK-OH exhibits improved Fenton-like catalytic activity on the degradation of RhB. The synergetic interaction between Fenton-like process and photocatalytic process also contributes such improvement. The hydroxyl radicals and holes are the major reactive species in the photocatalytically assisted Fenton-like process. This study provides a valuable strategy for metal modification of alkalinized g-C3N4 with enhanced Fenton-like catalytic performance for the degradation of organic contaminants.

  12. Treatment of reverse osmosis (RO) concentrate by the combined Fe/Cu/air and Fenton process (1stFe/Cu/air-Fenton-2ndFe/Cu/air).

    Science.gov (United States)

    Ren, Yi; Yuan, Yue; Lai, Bo; Zhou, Yuexi; Wang, Juling

    2016-01-25

    To decompose or transform the toxic and refractory reverse osmosis (RO) concentrate and improve the biodegradability, 1stFe/Cu/air-Fenton-2ndFe/Cu/air were developed to treat RO concentrate obtained from an amino acid production plant in northern China. First, their operating conditions were optimized thoroughly. Furthermore, 5 control experiments were setup to confirm the superiority of 1stFe/Cu/air-Fenton-2ndFe/Cu/air and synergistic reaction between Fe/Cu/air and Fenton. The results suggest that the developed method could obtain high COD removal (65.1%) and BOD5/COD ratio (0.26) due to the synergistic reaction between Fe/Cu/air and Fenton. Under the optimal conditions, the influent and effluent of 1stFe/Cu/air-Fenton-2ndFe/Cu/air and 5 control experiments were analyzed by using UV, FTIR, EEM and LC, which confirm the superiority of 1stFe/Cu/air-Fenton-2ndFe/Cu/air. Therefore, the developed method in this study is a promising process for treatment of RO concentrate. Copyright © 2015 Elsevier B.V. All rights reserved.

  13. Magnetic dipole moments of 58Cu and 59Cu by in-source laser spectroscopy

    International Nuclear Information System (INIS)

    Stone, N. J.; Koester, U.; Stone, J. Rikovska; Fedorov, D. V.; Fedoseyev, V. N.; Flanagan, K. T.; Hass, M.; Lakshmi, S.

    2008-01-01

    Online measurements of the magnetic dipole moments and isotope shifts of 58 Cu and 59 Cu by the in-source laser spectroscopy method are reported. The results for the magnetic moments are μ ( 58 Cu) =+0.52(8) μ N ,μ( 59 Cu) =+1.84(3) μ N and for the isotope shifts δν 59,65 =1.72(22) GHz and δν 58,65 =1.99(30) GHz in the transition from the 3d 10 4s 2 S 1/2 ground state to the 3d 10 4p 2 P 1/2 state in Cu I. The magnetic moment of 58 Cu is discussed in the context of the strength of the subshell closure at 56 Ni, additivity rules and large-scale shell model calculations

  14. Development of cold sprayed Cu coating for canister

    International Nuclear Information System (INIS)

    Kim, Hyung Jun; Kang, Yoon Ha

    2010-01-01

    Cold sprayed Cu deposition was studied for the application of outer part of canister for high level nuclear waste. Five commercially available pure Cu powders were analyzed and sprayed by high pressure cold spray system. Electrochemical corrosion test using potentiostat in 3.5% NaCl solution was conducted as well as microstructural analysis including hardness and oxygen content measurements. Overall evaluation of corrosion performance of cold sprayed Cu deposition is inferior to forged and extruded Cu plates, but some of Cu depositions are comparable to Cu plates. The simulated corrosion test in 200m underground cave is still in progress. The effect of cold spray process parameters was also studied and the results show that the type of nozzle is the most important other than powder feed rate, spray distance, and scan speed. 1/10 scale miniature of canister was manufactured confirming that the production of full scale canister is possible

  15. Relativity-Induced Bonding Pattern Change in Coinage Metal Dimers M2 (M = Cu, Ag, Au, Rg).

    Science.gov (United States)

    Li, Wan-Lu; Lu, Jun-Bo; Wang, Zhen-Ling; Hu, Han-Shi; Li, Jun

    2018-05-07

    The periodic table provides a fundamental protocol for qualitatively classifying and predicting chemical properties based on periodicity. While the periodic law of chemical elements had already been rationalized within the framework of the nonrelativistic description of chemistry with quantum mechanics, this law was later known to be affected significantly by relativity. We here report a systematic theoretical study on the chemical bonding pattern change in the coinage metal dimers (Cu 2 , Ag 2 , Au 2 , Rg 2 ) due to the relativistic effect on the superheavy elements. Unlike the lighter congeners basically demonstrating ns- ns bonding character and a 0 g + ground state, Rg 2 shows unique 6d-6d bonding induced by strong relativity. Because of relativistic spin-orbit (SO) coupling effect in Rg 2 , two nearly degenerate SO states, 0 g + and 2 u , exist as candidate of the ground state. This relativity-induced change of bonding mechanism gives rise to various unique alteration of chemical properties compared with the lighter dimers, including higher intrinsic bond energy, force constant, and nuclear shielding. Our work thus provides a rather simple but clear-cut example, where the chemical bonding picture is significantly changed by relativistic effect, demonstrating the modified periodic law in heavy-element chemistry.

  16. Cu-capped surface alloys of Pt/Cu left brace 100 right brace

    CERN Document Server

    Alshamaileh, E; Wander, A

    2003-01-01

    The room-temperature deposition of 0.5 monolayer (ML) Pt on Cu left brace 100 right brace followed by annealing to 525 K results in a sharp c(2 x 2) low-energy electron diffraction (LEED) pattern. The structure of this surface alloy is investigated by means of symmetrized automated tensor low-energy electron diffraction (SATLEED) analysis and ab initio plane wave density functional calculations. The results are then compared with those for the similar system 0.5 ML Pd/Cu left brace 100 right brace. SATLEED results for the Pt/Cu left brace 100 right brace show that it consists of an ordered c(2 x 2) Cu-Pt second layer alloy capped with a pure Cu first layer. The first and second interlayer spacings are found to be expanded by +5.1 +- 1.7 and +3.5 +- 1.7% respectively (relative to the bulk Cu interlayer spacing of 1.807 A) due to the insertion of the 8% larger Pt atoms into the second layer. The ordered mixed layer is found to be rippled by 0.08 +- 0.06 A with Pt atoms rippled outwards towards the solid-vacuum ...

  17. Microstructural characterization and compression properties of TiC{sub 0.61}/Cu(Al) composite synthesized from Cu and Ti{sub 3}AlC{sub 2} powders

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Zhenying, E-mail: zhyhuang@bjtu.edu.cn [Institute of Material Science and Engineering, School of Mechanical and Electronic Control Engineering, Beijing Jiaotong University, Beijing 100044 (China); Institut PPRIME, Département de Physique et Mécanique des Matériaux, CNRS, Université de Poitiers, ENSMA, UPR 3346, SP2MI, Téléport 2 Boulevard Marie et Pierre Curie, BP 30179, F86962 Futuroscope Chasseneuil Cedex (France); Bonneville, Joel [Institut PPRIME, Département de Physique et Mécanique des Matériaux, CNRS, Université de Poitiers, ENSMA, UPR 3346, SP2MI, Téléport 2 Boulevard Marie et Pierre Curie, BP 30179, F86962 Futuroscope Chasseneuil Cedex (France); Zhai, Hongxiang [Institute of Material Science and Engineering, School of Mechanical and Electronic Control Engineering, Beijing Jiaotong University, Beijing 100044 (China); Gauthier-Brunet, Veronique [Institut PPRIME, Département de Physique et Mécanique des Matériaux, CNRS, Université de Poitiers, ENSMA, UPR 3346, SP2MI, Téléport 2 Boulevard Marie et Pierre Curie, BP 30179, F86962 Futuroscope Chasseneuil Cedex (France); and others

    2014-07-25

    Highlights: • Submicro-layered TiC{sub 0.61}/Cu(Al) nanocomposite. • MAX phase. • High yield stress. • Deformation mechanism. - Abstract: A new submicro-layered TiC{sub 0.61}/Cu(Al) composite has been prepared by hot-pressing a mixture of 50 vol.% Ti{sub 3}AlC{sub 2} and 50 vol.% Cu powders at 1150 °C and 30 MPa. It is shown that the initial reinforcement Ti{sub 3}AlC{sub 2} particles have, after synthesis, an unusual microstructure, which consists of submicron-thick layers of TiC{sub 0.61} and Cu(Al) alloy. Both the width of the TiC{sub 0.61} and Cu(Al) layers are ∼150 nm. Thus, the Ti{sub 3}AlC{sub 2} particles are decomposed into the TiC{sub 0.61} phase, while the additional Al atoms provided by Ti{sub 3}AlC{sub 2} diffuse into the molten Cu matrix at high temperature. Compression tests were performed at constant strain rate in the temperature range 20–800 °C. The new designed TiC{sub 0.61}/Cu(Al) composite has both a high yield stress, σ{sub 0.2} measured at 0.2% strain offset, and a high ultimate compressive strength, σ{sub UCS}, which is attributed to strong interface bonding between TiC{sub 0.61} and Cu(Al) phase. For instance, at 20 and 200 °C, σ{sub 0.2} is 770 MPa and 700 MPa, while σ{sub UCS} is 1.18 GPa and 1 GPa, respectively. Plastic deformation takes place in the Cu(Al) matrix. Wavy slip lines are observed indicating that cross-slip could be the dominant deformation mechanism.

  18. Ab initio molecular dynamics study of thermite reaction at Al and CuO nano-interfaces at different temperatures

    Science.gov (United States)

    Tang, Cui-Ming; Chen, Xiao-Xu; Cheng, Xin-Lu; Zhang, Chao-Yang; Lu, Zhi-Peng

    2018-05-01

    The thermite reaction at Al/CuO nano-interfaces is investigated with ab initio molecular dynamics calculations in canonical ensemble at 500 K, 800 K, 1200 K and 1500 K, respectively. The reaction process and reaction products are analyzed in terms of chemical bonds, average charge, time constants and total potential energy. The activity of the reactants enhances with increasing temperature, which induces a faster thermite reaction. The alloy reaction obviously expands outward at Cu-rich interface of Al/CuO system, and the reaction between Al and O atoms obviously expands outward at O-rich interface as temperature increases. Different reaction products are found at the outermost layer of different interfaces in the Al/CuO system. In generally, the average charge of the outer layer aluminum atoms (i.e., Al1, Al2, Al5 and Al6) increases with temperature. The potential energy of Al/CuO system decreases significantly, which indicates that drastic exothermic reaction occurs at the Al/CuO system. This research enhances fundamental understanding in temperature effect on the thermite reaction at atomic level, which can potentially open new possibilities for its industrial application.

  19. The decay of 61Cu nucleus

    International Nuclear Information System (INIS)

    Zheng Wanhui; Gu Jiahui; Zhu Jiabi; Wang Gongqing

    1988-01-01

    The decay of 61 Cu nucleus has been investigated with Ge(Li) and H p Ge detector, semiconductor electron spectrometer and Ge(Li)-NaI γ-γ coincidence spectrometer. 35 γrays from 12 excited levels have been found. The single and coincidence spectra show that 545 keV, 1019keV γ fays and 1019keV energy level are wrong which appear in the 61 Cu decay scheme carried in > (the 7th edition 1978). the halflife time of 61 Cu nucleus and the internal conversion coefficient for 67 keV γ-transition are found to be T 1/2 =207.7±1.6min and α=0.12±0.01 respectively and then a decay scheme is proposed. In this paper more attention ia paid to discussing the energy levels of 1014, 1019, and 1997 keV as well as some weak γ rays

  20. Spatially Correlated, Single Nanomaterial-Level Structural and Optical Profiling of Cu-Doped ZnO Nanorods Synthesized via Multifunctional Silicides

    Directory of Open Access Journals (Sweden)

    Johnson Truong

    2018-04-01

    Full Text Available We demonstrate a straightforward and effective method to synthesize vertically oriented, Cu-doped ZnO nanorods (NRs using a novel multipurpose platform of copper silicide nanoblocks (Cu3Si NBs preformed laterally in well-defined directions on Si. The use of the surface-organized Cu3Si NBs for ZnO NR growth successfully results in densely assembled Cu-doped ZnO NRs on each NB platform, whose overall structures resemble thick bristles on a brush head. We show that Cu3Si NBs can uniquely serve as a catalyst for ZnO NRs, a local dopant source of Cu, and a prepatterned guide to aid the local assembly of the NRs on the growth substrate. We also ascertain the crystalline structures, optical properties, and spectroscopic signatures of the Cu-doped ZnO NRs produced on the NBs, both at each module of NRs/NB and at their ensemble level. Subsequently, we determine their augmented properties relative to the pristine form of undoped ZnO NRs and the source material of Cu3Si NBs. We provide spatially correlated structural and optical data for individual modules of Cu-doped ZnO NRs assembled on a Cu3Si NB by resolving them along the different positions on the NB. Ensemble-averaged versus individual behaviors of Cu-doped ZnO NRs on Cu3Si NBs are then compared. We further discuss the potential impact of such ZnO-derived NRs on their relatively unexplored biological and biomedical applications. Our efforts will be particularly useful when exploiting each integrated module of self-aligned, Cu-doped ZnO NRs on a NB as a discretely addressable, active element in solid-state sensors and miniaturized luminescent bioprobes.

  1. On the intrinsic gettering in Cu-contaminated Cz-Si

    International Nuclear Information System (INIS)

    Schmalz, K.; Kirscht, F.G.; Babanskaja, I.; Kittler, M.; Richter, H.; Seifert, W.

    1985-01-01

    NAA, TEM, DLTS, and EBIC investigations of Cu-contaminated Cz-Si with an intrinsic-gettering procedure realized by a multistep heat treatment demonstrate the efficiency of intrinsic gettering concerning redistribution to volume defects for Cu-contamination up to 10 16 cm -3 . The Cu-precipitation at the surface can still be suppressed for such contamination due to volume defects. However, in this case the concentration of contamination induced deep level centers at the surface is independent of the volume defect density. Only for Cu-contamination of about 10 15 cm -3 the gettering effect is strong enough to prevent the introduction of contamination induced deep levels at the surface. (author)

  2. Thermochemistry of paddle wheel MOFs: Cu-HKUST-1 and Zn-HKUST-1.

    Science.gov (United States)

    Bhunia, Manas K; Hughes, James T; Fettinger, James C; Navrotsky, Alexandra

    2013-06-25

    Metal-organic framework (MOF) porosity relies upon robust metal-organic bonds to retain structural rigidity upon solvent removal. Both the as-synthesized and activated Cu and Zn polymorphs of HKUST-1 were studied by room temperature acid solution calorimetry. Their enthalpies of formation from dense assemblages (metal oxide (ZnO or CuO), trimesic acid (TMA), and N,N-dimethylformamide (DMF)) were calculated from the calorimetric data. The enthalpy of formation (ΔHf) of the as-synthesized Cu-HKUST-H2O ([Cu3TMA2·3H2O]·5DMF) is -52.70 ± 0.34 kJ per mole of Cu. The ΔHf for Zn-HKUST-DMF ([Zn3TMA2·3DMF]·2DMF) is -54.22 ± 0.57 kJ per mole of Zn. The desolvated Cu-HKUST-dg [Cu3TMA2] has a ΔHf of 16.66 ± 0.51 kJ/mol per mole Cu. The ΔHf for Zn-HKUST-amorph [Zn3TMA2·2DMF] is -3.57 ± 0.21 kJ per mole of Zn. Solvent stabilizes the Cu-HKUST-H2O by -69.4 kJ per mole of Cu and Zn-HKUST-DMF by at least -50.7 kJ per mole of Zn. Such strong chemisorption of solvent is similar in magnitude to the strongly exothermic binding at low coverage for chemisorbed H2O on transition metal oxide nanoparticle surfaces. The strongly exothermic solvent-framework interaction suggests that solvent can play a critical role in obtaining a specific secondary building unit (SBU) topology.

  3. Calculation of Gibbs energy of Zr-Al-Ni, Zr-Al-Cu, Al-Ni-Cu and Zr-Al-Ni-Cu liquid alloys based on quasiregular solution model

    International Nuclear Information System (INIS)

    Li, H.Q.; Yang, Y.S.; Tong, W.H.; Wang, Z.Y.

    2007-01-01

    With the effects of electronic structure and atomic size being introduced, the mixing enthalpy as well as the Gibbs energy of the ternary Zr-Al-Cu, Ni-Al-Cu, Zr-Ni-Al and quaternary Zr-Al-Ni-Cu systems are calculated based on quasiregular solution model. The computed results agree well with the experimental data. The sequence of Gibbs energies of different systems is: G Zr-Al-Ni-Cu Zr-Al-Ni Zr-Al-Cu Cu-Al-Ni . To Zr-Al-Cu, Ni-Al-Cu and Zr-Ni-Al, the lowest Gibbs energy locates in the composition range of X Zr 0.39-0.61, X Al = 0.38-0.61; X Ni = 0.39-0.61, X Al = 0.38-0.60 and X Zr = 0.32-0.67, X Al = 0.32-0.66, respectively. And to the Zr-Ni-Al-Cu system with 66.67% Zr, the lowest Gibbs energy is obtained in the region of X Al = 0.63-0.80, X Ni = 0.14-0.24

  4. Studies of the development and characterization of the Cu-Ni-Pt and Cu-Ni-Sn alloys for electro-electronic uses; Estudos do desenvolvimento e caracterizacao das ligas Cu-Ni-Pt e Cu-Ni-Sn para fins eletro-eletronicos

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Luis Carlos Elias da

    2006-07-01

    The Cu and its alloys have different applications in the owed modern society the excellent electric properties, thermal conductivity, resistance to the corrosion and other properties. These applications can be in valves, pipes, pots for absorption of solar energy, radiators for automobiles, current driver, electronic driver, thermostats elements and structural parts of nuclear reactors, as, for example, reels for field toroidal for a reactor of nuclear coalition. The alloys used in nuclear reactors, we can highlight Cu-Be, Cu-Sn and Cu-Pt. Ni and Co frequently are added to the Cu alloys so that the solubility is moved for temperatures more elevated with relationship to the binary systems of Cu-Sn and Cu-Pt. The addition of Ni-Pt or Ni-Sn to the Cu in the same or inferior percentages to 1,5% plus thermomechanical treatments changes the properties of the copper. We studied the electric conductivity and hardness Vickers of the Cu-Ni-Pt and Cu-Ni-Sn and compared with the electrolytic Cu. In the proposed flowcharts, breaking of the obtaining of the ingot, we proceeded with thermo mechanical treatments. (author)

  5. Radiolabeling and biodistribution of 62Cu-dithiocarbamate

    International Nuclear Information System (INIS)

    Matsumoto, Kazuya; Fujibayashi, Yasuhisa; Yokoyama, Akira; Konishi, Junji.

    1990-01-01

    The newly developed 62 Zn/ 62 Cu generator system has made available the production of the short-lived 62 Cu (T 1/2 = 9.8 min) positron radionuclide, eluted as 62 Cu-glycine. In the search for 62 Cu labeled radiopharmaceuticals for positron CT (PET) brain diagnostic studies, two ligands N,N-diethyl- and N,N-dimethyl-dithiocarbamic acid (DDC and DmDC) were selected, based on their Cu chelating abilities and the neutral lipophilic character of their copper chelates. In the present work, an in vitro study with non-radioactive Cu-glycine showed that both ligands easily formed the stable, neutral Cu-DDC and Cu-DmDC chelates (1:2 metal-ligand complexes) based on the ligand exchange reaction. Then the 62 Zn/ 62 Cu generator eluate, the 62 Cu-glycine was used for the radiolabeling of DDC and DmDC. The following HPLC analysis revealed that the ligand exchange reaction proceeded rapidly; the radiochemical purities of 62 Cu-DDC and 62 Cu-DmDC were extremely high (non-detectable 62 Cu-glycine) and both chelates were more lipophilic than 62 Cu-glycine. The mouse biodistribution of both radiolabeled compounds, 62 Cu-DDC and 62 Cu-DmDC indicated a brain accumlation of 2.8 and 5.3 times higher than 62 Cu-glycine, 15 min post injection, respectively. The brain accumulation observed with both 62 Cu-DDC and 62 Cu-DmDC might be due to their stable, neutral and lipophilic character; the latter enhanced by the presence of the methylated side chains. The gathered results indicated the applicability of dithiocarbamic acid derivatives in the production of new 62 Cu-labeled compounds using the 62 Zn/ 62 Cu generator system based on the ligand exchange reaction with 62 Cu-glycine eluate. Further studies with Cu-dithiocarbamic acid derivatives for development of new generator-produced 62 Cu positron radiopharmaceuticals can be recalled. (author)

  6. Electronic structures of PrBa2Cu3O7, Pr2Ba4Cu7O15-y(y=0,1), and PrBa2Cu4O8 based on LSDA+U method

    International Nuclear Information System (INIS)

    Tavana, A.; Shirazi, M.; Akhavan, M.

    2009-01-01

    The electronic structures of PrBa 2 Cu 3 O 7 (Pr123), Pr 2 Ba 4 Cu 7 O 15-y (Pr247), and PrBa 2 Cu 4 O 8 (Pr124) cuprates have been obtained using density-functional theory in the local spin density approximation plus onsite Coulomb interaction (LSDA+U). Onsite Hubbard correlation, U, has been considered for Pr-f and Cu-d orbitals and the effects of considering these correlation corrections on the Pr-O hybridizations have been inspected. Results imply that the Pr ionization state in Pr123 system is constituted from two different configurations, and the energy of the f states in these two configurations has an important role in superconductivity properties of the system. Our calculations also show that in both Pr124 and Pr247 systems, suppression of superconductivity is weaker than that in the Pr123 system. This occurs due to the weaker Pr-O bond in both Pr124 and Pr247 systems. The role of the double chain and single chain on the conduction properties of these compounds has been investigated. We have also studied the effect of oxygen deficiency in Pr247 system, which seems to revive superconductivity in this system. Investigating the hole carriers in the CuO 2 plane shows a correlation between superconductivity suppression and hole decrement in the planes. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  7. Communication: Surface-to-bulk diffusion of isolated versus interacting C atoms in Ni(111) and Cu(111) substrates: A first principle investigation

    Energy Technology Data Exchange (ETDEWEB)

    Harpale, Abhilash; Panesi, Marco; Chew, Huck Beng, E-mail: hbchew@illinois.edu [Department of Aerospace Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

    2015-02-14

    Using first principle calculations, we study the surface-to-bulk diffusion of C atoms in Ni(111) and Cu(111) substrates, and compare the barrier energies associated with the diffusion of an isolated C atom versus multiple interacting C atoms. We find that the preferential Ni-C bonding over C–C bonding induces a repulsive interaction between C atoms located at diagonal octahedral voids in Ni substrates. This C–C interaction accelerates C atom diffusion in Ni with a reduced barrier energy of ∼1 eV, compared to ∼1.4-1.6 eV for the diffusion of isolated C atoms. The diffusion barrier energy of isolated C atoms in Cu is lower than in Ni. However, bulk diffusion of interacting C atoms in Cu is not possible due to the preferential C–C bonding over C–Cu bonding, which results in C–C dimer pair formation near the surface. The dramatically different C–C interaction effects within the different substrates explain the contrasting growth mechanisms of graphene on Ni(111) and Cu(111) during chemical vapor deposition.

  8. Communication: Surface-to-bulk diffusion of isolated versus interacting C atoms in Ni(111) and Cu(111) substrates: A first principle investigation.

    Science.gov (United States)

    Harpale, Abhilash; Panesi, Marco; Chew, Huck Beng

    2015-02-14

    Using first principle calculations, we study the surface-to-bulk diffusion of C atoms in Ni(111) and Cu(111) substrates, and compare the barrier energies associated with the diffusion of an isolated C atom versus multiple interacting C atoms. We find that the preferential Ni-C bonding over C-C bonding induces a repulsive interaction between C atoms located at diagonal octahedral voids in Ni substrates. This C-C interaction accelerates C atom diffusion in Ni with a reduced barrier energy of ∼1 eV, compared to ∼1.4-1.6 eV for the diffusion of isolated C atoms. The diffusion barrier energy of isolated C atoms in Cu is lower than in Ni. However, bulk diffusion of interacting C atoms in Cu is not possible due to the preferential C-C bonding over C-Cu bonding, which results in C-C dimer pair formation near the surface. The dramatically different C-C interaction effects within the different substrates explain the contrasting growth mechanisms of graphene on Ni(111) and Cu(111) during chemical vapor deposition.

  9. Corrosion and runoff rates of Cu and three Cu-alloys in marine environments with increasing chloride deposition rate.

    Science.gov (United States)

    Odnevall Wallinder, Inger; Zhang, Xian; Goidanich, Sara; Le Bozec, Nathalie; Herting, Gunilla; Leygraf, Christofer

    2014-02-15

    Bare copper sheet and three commercial Cu-based alloys, Cu15Zn, Cu4Sn and Cu5Al5Zn, have been exposed to four test sites in Brest, France, with strongly varying chloride deposition rates. The corrosion rates of all four materials decrease continuously with distance from the coast, i.e. with decreasing chloride load, and in the following order: Cu4Sn>Cu sheet>Cu15Zn>Cu5Al5Zn. The patina on all materials was composed of two main layers, Cu2O as the inner layer and Cu2(OH)3Cl as the outer layer, and with a discontinuous presence of CuCl in between. Additional minor patina constituents are SnO2 (Cu4Sn), Zn5(OH)6(CO3)2 (Cu15Zn and Cu5Al5Zn) and Zn6Al2(OH)16CO3·4H2O/Zn2Al(OH)6Cl·2H2O/Zn5Cl2(OH)8·H2O and Al2O3 (Cu5Al5Zn). The observed Zn- and Zn/Al-containing corrosion products might be important factors for the lower sensitivity of Cu15Zn and Cu5Al5Zn against chloride-induced atmospheric corrosion compared with Cu sheet and Cu4Sn. Decreasing corrosion rates with exposure time were observed for all materials and chloride loads and attributed to an improved adherence with time of the outer patina to the underlying inner oxide. Flaking of the outer patina layer was mainly observed on Cu4Sn and Cu sheet and associated with the gradual transformation of CuCl to Cu2(OH)3Cl of larger volume. After three years only Cu5Al5Zn remains lustrous because of a patina compared with the other materials that appeared brownish-reddish. Significantly lower release rates of metals compared with corresponding corrosion rates were observed for all materials. Very similar release rates of copper from all four materials were observed during the fifth year of marine exposure due to an outer surface patina that with time revealed similar constituents and solubility properties. Copyright © 2013 The Authors. Published by Elsevier B.V. All rights reserved.

  10. Red light emission from ZnO:Eu"3"+|CuSCN hetero-junction under cathodic polarization

    International Nuclear Information System (INIS)

    Sirimanne, P.M.; Minoura, H.

    2015-01-01

    Eu"3"+ ions were bonded to ZnO ceramic via organic ligand. Surface bonded Eu"3"+ ions were exhibited specific luminescence bands due to electron transitions between f–f intra-configurationally transitions. Further enhancement of luminescence bands was observed by attaching selected oligomers to Eu"3"+ ions. A hetero-junction was prepared by depositing copper-thiocyanate on Eu"3"+ ions bonded ZnO ceramic. Red light emission was observed from surface bonded Eu"3"+ ions in ZnO:Eu"3"+|CuSCN hetero-junction under reverse bias. - Highlights: • Europium doped ZnO ceramic exhibits photo-luminescence. • Semiconductor hetro-junction was prepared. • ZnO:Eu"3"+|CuSCN hetero-junction emits red light under reverse bias.

  11. Solid phase selective separation and preconcentration of Cu(II) by Cu(II)-imprinted polymethacrylic microbeads.

    Science.gov (United States)

    Dakova, Ivanka; Karadjova, Irina; Ivanov, Ivo; Georgieva, Ventsislava; Evtimova, Bisera; Georgiev, George

    2007-02-12

    Ion-imprinted polymer (IIP) particles are prepared by copolymerization of methacrylic acid as monomer, trimethylolpropane trimethacrylate as crosslinking agent and 2,2'-azo-bis-isobutyronitrile as initiator in the presence of Cu(II), a Cu(II)-4-(2-pyridylazo)resorcinol (Cu(II)-PAR) complex, and PAR only. A batch procedure is used for the determination of the characteristics of the Cu(II) solid phase extraction from the IIP produced. The results obtained show that the Cu(II)-PAR IIP has the greatest adsorption capacity (37.4 micromol g(-1) of dry copolymer) among the IIPs investigated. The optimal pH value for the quantitative preconcentration is 7, and full desorption is achieved by 1 M HNO(3). The selectivity coefficients (S(Cu/Me)) for Me=Ni(II), Co(II) are 45.0 and 38.5, respectively. It is established that Cu(II)-PAR IIPs can be used repeatedly without a considerable adsorption capacity loss. The determination of Cu(II) ions in seawater shows that the interfering matrix does not influence the preconcentration and selectivity values of the Cu(II)-PAR IIPs. The detection and quantification limits are 0.001 micromol L(-1) (3sigma) and 0.003 micromol L(-1) (6sigma), respectively.

  12. Integration of a functionally graded W/Cu transition for divertor components of fusion facilities

    International Nuclear Information System (INIS)

    Pintsuk, G.

    2004-01-01

    One of the most difficult topics in the design and development of future fusion devices, e.g. ITER (Latin for ''the way'') is the field of plasma facing components for the divertor. In steady-state mode these will be exposed to heat fluxes up to 20 MW/m 2 . The favored design-option is a component made out of tungsten and copper-alloys. Since these materials differ in their thermal expansion coefficient and their elastic modulus a temperature gradient within the component, caused by thermal loads, results in stresses at the interface. An alternative design-option for divertor-components deals with the insertion of a functionally graded material (FGM) between tungsten and copper. This establishes a continuous change of material properties and therefore minimize the stresses and optimize the thermal behavior of the component. Low pressure plasma-spraying and direct laser-sintering are introduced as possible production-methods of graded W/Cu-composites. Based on preliminary investigations both are used for fabricating W/Cu-composite materials with different mixing ratios. Thermo-mechanical and thermo-physical material properties will be determined on these composites and extrapolated to all mixing ratios. For laser-sintering these are limited to Cu-contents of ∝20 to 100 Vol%. Therefore the plasma-spraying process is favored. In finite-element-analyses the graded material and its material properties will be implemented into a 2-D simulation-model of a divertor component. The composition and the design of the graded W/Cu-composite will be optimized. Best results are obtained by high contents of tungsten within the graded layer, which are still improved by a macro-brush design with dimensions of 4.5 x 4.5 mm 2 . This results in a transfer of critical stresses from the mechanical bonded interface between the plasma facing and the graded material to the diffusion bonded interface between the graded material and copper. The joining of tungsten, a plasma-sprayed graded W/Cu

  13. Accurate characterization of wafer bond toughness with the double cantilever specimen

    Science.gov (United States)

    Turner, Kevin T.; Spearing, S. Mark

    2008-01-01

    The displacement loaded double cantilever test, also referred to as the "Maszara test" and the "crack opening method" by the wafer bonding community, is a common technique used to evaluate the interface toughness or surface energy of direct wafer bonds. While the specimen is widely used, there has been a persistent question as to the accuracy of the method since the actual specimen geometry differs from the ideal beam geometry assumed in the expression used for data reduction. The effect of conducting the test on whole wafer pairs, in which the arms of cantilevers are wide plates rather than slender beams, is examined in this work using finite element analysis. A model is developed to predict the equilibrium shape of the crack front and to develop a corrected expression for calculating interface toughness from crack length measurements obtained in tests conducted on whole wafer pairs. The finite element model, which is validated through comparison to experiments, demonstrates that using the traditional beam theory-based expressions for data reduction can lead to errors of up to 25%.

  14. Coupled growth of Al-Al2Cu eutectics in Al-Cu-Ag alloys

    International Nuclear Information System (INIS)

    Hecht, U; Witusiewicz, V; Drevermann, A

    2012-01-01

    Coupled eutectic growth of Al and Al 2 Cu was investigated in univariant Al-Cu-Ag alloys during solidification with planar and cellular morphology. Experiments reveal the dynamic selection of small spacings, below the minimum undercooling spacing and show that distinct morphological features pertain to nearly isotropic or anisotropic Al-Al 2 Cu interfaces.

  15. Bioaccumulation, toxicokinetics, and effects of copper from sediment spiked with aqueous Cu, nano-CuO, or micro-CuO in the deposit-feeding snail, Potamopyrgus antipodarum

    DEFF Research Database (Denmark)

    Pang, Chengfang; Selck, Henriette; Banta, Gary Thomas

    2013-01-01

    The present study examined the relative importance of copper (aqueous Cu and CuO particles of different sizes) added to sediment to determine the bioaccumulation, toxicokinetics, and effects in the deposit feeder Potamopyrgus antipodarum. In experiment 1, the bioaccumulation of Cu (240 mg Cu/g dr...

  16. Resistance to high level of Cu (Copper) by arbuscular mycorrhizal, saprobe Fungi and Eucalyptus globules

    International Nuclear Information System (INIS)

    Arriagada, C.; Pereira, G.; Machuca, A.; Alvear, M.; Martin, J.; Ocampo, J.

    2009-01-01

    The effects of saprobe and arbuscular mycorrhizal (AM) fungi on growth, chorophyll, root length colonization and succinate dehydrogenase (SDH) activity was measured in Eucalyptus globulus Labill., plants growing in soil with high level of Cu were investigated. The application of Cu inhibited the development of mycelia of the saprobe fungi Fusarium concolor and Trichoderma koningii and the hyphal length of the arbuscular mycorrhizal fungi (AM) Glomus mosseae and G. deserticola in vitro. (Author)

  17. Resistance to high level of Cu (Copper) by arbuscular mycorrhizal, saprobe Fungi and Eucalyptus globules

    Energy Technology Data Exchange (ETDEWEB)

    Arriagada, C.; Pereira, G.; Machuca, A.; Alvear, M.; Martin, J.; Ocampo, J.

    2009-07-01

    The effects of saprobe and arbuscular mycorrhizal (AM) fungi on growth, chorophyll, root length colonization and succinate dehydrogenase (SDH) activity was measured in Eucalyptus globulus Labill., plants growing in soil with high level of Cu were investigated. The application of Cu inhibited the development of mycelia of the saprobe fungi Fusarium concolor and Trichoderma koningii and the hyphal length of the arbuscular mycorrhizal fungi (AM) Glomus mosseaae and G. deserticola in vitro. (Author)

  18. Reassessment of the electron density in Cu2O using γ-ray diffraction.

    Science.gov (United States)

    Jauch, Wolfgang; Reehuis, Manfred

    2014-12-01

    The electron-density distribution in Cu2O has been critically reexamined to test controversial conclusions from earlier experimental and theoretical studies. The electron density is derived via multipole refinement of high-quality single-crystal diffraction data, collected at room temperature with 316.5 keV gamma radiation. Four γ-lines in the energy range 200-600 keV have been used to extrapolate extinction-free low-order structure factors. The remaining extinction corrections refine to a crystal mosaicity identical to the observed one. There is no support for anharmonic contributions to the thermal parameters. Important features of the derived electron density are (i) a partially filled d_{z^2} orbital, (ii) an incomplete ionization of Cu and O, and (iii) no interstitial Cu-Cu charge pileup, thereby refuting the covalent bonding hypothesis.

  19. Cu-Cr Literature Review

    Energy Technology Data Exchange (ETDEWEB)

    Need, Ryan F. [Los Alamos National Laboratory

    2012-08-09

    Cu-Cr alloys are part of a class of face-centered cubic (FCC)-body-centered cubic (BCC) composites that includes similar alloys, such as Cu-Nb and Cu-Ta. When heavily deformed, these FCC-BCC materials create 'in situ' composites with a characteristic structure-nanoscale BCC filaments in a ductile FCC matrix. The strength of these composites is vastly greater than predicted by the rule of mixtures, and has been shown to be inversely proportional to the filament spacing. Lower raw materials costs suggest that Cu-Cr alloys may offer more economical solution to high-strength, high-conductivity wire than either their Nb or Ta counterparts. However, Cr is also more brittle and soluble in Cu than Nb or Ta. These qualities necessitate thermal treatments to remove solute atoms from the Cu matrix, improve conductivity, and maintain the ductility of the Cr filaments. Through the use of different thermomechanical processing routes or the addition of select dopants, alloys with strength in excess of 1 GPa at 70% IACS have been achieved. To date, previous research on Cu-Cr alloys has focused on a relatively small number of alloy compositions and processing methods while the effects of dopants and ageing treatments have only been studied independently. Consequently, there remains considerable opportunity for the development and optimization of these alloys as a leading high-strength, high-conductivity material.

  20. Spatial part-set cuing facilitation.

    Science.gov (United States)

    Kelley, Matthew R; Parasiuk, Yuri; Salgado-Benz, Jennifer; Crocco, Megan

    2016-07-01

    Cole, Reysen, and Kelley [2013. Part-set cuing facilitation for spatial information. Journal of Experimental Psychology: Learning, Memory, & Cognition, 39, 1615-1620] reported robust part-set cuing facilitation for spatial information using snap circuits (a colour-coded electronics kit designed for children to create rudimentary circuit boards). In contrast, Drinkwater, Dagnall, and Parker [2006. Effects of part-set cuing on experienced and novice chess players' reconstruction of a typical chess midgame position. Perceptual and Motor Skills, 102(3), 645-653] and Watkins, Schwartz, and Lane [1984. Does part-set cuing test for memory organization? Evidence from reconstructions of chess positions. Canadian Journal of Psychology/Revue Canadienne de Psychologie, 38(3), 498-503] showed no influence of part-set cuing for spatial information when using chess boards. One key difference between the two procedures was that the snap circuit stimuli were explicitly connected to one another, whereas chess pieces were not. Two experiments examined the effects of connection type (connected vs. unconnected) and cue type (cued vs. uncued) on memory for spatial information. Using chess boards (Experiment 1) and snap circuits (Experiment 2), part-set cuing facilitation only occurred when the stimuli were explicitly connected; there was no influence of cuing with unconnected stimuli. These results are potentially consistent with the retrieval strategy disruption hypothesis, as well as the two- and three-mechanism accounts of part-set cuing.

  1. Density functional study of CaN mono and bilayer on Cu(001)

    International Nuclear Information System (INIS)

    Zahedifar, Maedeh; Hashemifar, S. Javad; Akbarzadeh, Hadi

    2014-01-01

    Density functional - pseudopotential calculations are performed to provide first-principles insights into magnetic behaviour of bulk CaN and CaN monolayers on Cu(001) in the rock-salt (RS) and zinc-blende (ZB) structures. Our results indicate that both RS- and ZB-CaN exhibit half-metallic ferromagnetism originated from the incomplete 2p shell of the nitrogen ion. In contrast to the bulk CaN, the CaN monolayers on Cu(001) generally favor ZB structure. We argue that the more stable ZB-CaN thin films on Cu(001) are nonmagnetic, because of strong Cu-N bonding at the interface, while the less stable Ca terminated ZB-CaN thin films exhibit half-metallic ferromagnetism. The transition path between the high energy ferromagnetic and the stable nonmagnetic configurations of the ZB-CaN monolayer on Cu(001) are studied by using the nudged elastic band method. We observe a two stages transition and an activation barrier of about 1.18 eV in the minimum energy path of this transition

  2. First-principles study on the elastic properties of B′ and Q phase in Al-Mg-Si (-Cu) alloys

    International Nuclear Information System (INIS)

    Pan, Rong-Kai; Ma Li; Bian Nan; Wang Minghui; Li Pengbo; Tang Biyu; Peng Liming; Ding Wenjiang

    2013-01-01

    First-principles calculations within the density functional theory have been carried out to study the structural, elastic and electronic properties of B′ and Q phases in Al-Mg-Si (-Cu) alloys. The obtained lattice constant a is reduced while c is increased with the addition of Cu into B′ phase Al 3 Mg 9 Si 7 . The lower formation enthalpy of Q phase Al 3 Cu 2 Mg 9 Si 7 shows that the structural stability is improved after the addition of Cu into the B′ phase. The calculated elastic constants C ij with the exception of C 13 for Q phase are larger than for B′ phase. In addition, the derived bulk, shear, Young's modulus and Debye temperature except Poisson's ratio are also significantly increased with Cu addition, indicating that Q phase has a favorable improvement of hardness. The elastic anisotropies of the two phases are discussed in detail using several criteria, showing that the anisotropy degree of B′ phase is larger than of Q phase. The electronic structures show that the two phases possess a mixed bonding character of covalent and ionic, and Cu-Si bonding is beneficial in stabilizing the Q phase due to the hybridization of Cu 3d and Si 3p orbits.

  3. Decomposition mechanism of formic acid on Cu (111) surface: A theoretical study

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Zhao, E-mail: jiangzhao@mail.xjtu.edu.cn; Qin, Pei; Fang, Tao

    2017-02-28

    Highlights: • Adsorption and decomposition mechanism of HCOOH on Cu (111) were investigated using DFT calculations. • The stable co-adsorption configurations of related intermediates were identified. • Five dissociation pathways of HCOOH via initial H−O, C−H and C−O bond scissions were considered and analyzed. - Abstract: The study of formic acid decomposition on transition metal surfaces is important to obtain useful information for vapor phase catalysis involving HCOOH and for the development of direct formic acid fuel cells. In this study, periodic density functional theory calculations have been employed to investigate the dissociation pathways of HCOOH on Cu (111) surface. About adsorption, it is found that the adsorption of HCOO, COOH, HCO, CO, OH and H on Cu (111) are considered chemisorption, whereas HCOOH, CO{sub 2}, H{sub 2}O and H{sub 2} have the weak interaction with Cu (111) surface. Furthermore, the minimum energy pathways are analyzed for the decomposition of HCOOH to CO{sub 2} and CO through the scission of H−O, C−H and C−O bonds. It is found that HCOOH, HCOO and COOH prefer to dissociate in the related reactions rather than desorb. For the decomposition, it is indicated that HCO and COOH are the main dissociated intermediates of trans-HCOOH, CO{sub 2} is the main dissociated intermediates of bidentate-HCOO, and CO is the main dissociated product of cis-COOH. The co-adsorbed H atom is beneficial for the formation of CO{sub 2} from cis-COOH. Besides, it is found that the most favorable path for HCOOH decomposition on Cu (111) surface is HCOOH-HCO-CO (Path 5), where the step of CO formation from HCO dehydrogenation is considered to be the rate-determining step. The results also show that CO is preferentially formed as the dominant product of HCOOH on Cu (111) surface.

  4. Cu2+ in layered compounds: origin of the compressed geometry in the model system K2ZnF4:Cu2+.

    Science.gov (United States)

    Aramburu, J A; García-Lastra, J M; García-Fernández, P; Barriuso, M T; Moreno, M

    2013-06-17

    Many relevant properties (including superconductivity and colossal magnetoresistance) of layered materials containing Cu(2+), Ag(2+), or Mn(3+) ions are commonly related to the Jahn-Teller instability. Along this line, the properties of the CuF6(4-) complex in the K2ZnF4 layered perovskite have recently been analyzed using a parametrized Jahn-Teller model with an imposed strain [Reinen, D. Inorg. Chem.2012, 51, 4458]. Here, we present results of ab initio periodic supercell and cluster calculations on K2ZnF4:Cu(2+), showing unequivocally that the actual origin of the unusual compressed geometry of the CuF6(4-) complex along the crystal c axis in that tetragonal lattice is due to the presence of an electric field due to the crystal surrounding the impurity. Our calculations closely reproduce the experimental optical spectrum. The calculated values of the equilibrium equatorial and axial Cu(2+)-F(-) distances are, respectively, R(ax) = 193 pm and R(eq) = 204 pm, and so the calculated distortion R(ax) - R(eq) = 11 pm is three times smaller than the estimated through the parametrized Jahn-Teller model. As a salient feature, we find that if the CuF6(4-) complex would assume a perfect octahedral geometry (R(ax) = R(eq) = 203 pm) the antibonding a(1g)*(∼3z(2) - r(2)) orbital is placed above b(1g)*(∼x(2) - y(2)) with a transition energy E((2)A(1g) → (2)B(1g)) = 0.34 eV. This surprising fact stresses that about half the experimental value E((2)A(1g) → (2)B(1g)) = 0.70 eV is not due to the small shortening of the axial Cu(2+)-F(-) distance, but it comes from the electric field, E(R)(r), created by the rest of the lattice ions on the CuF6(4-) complex. This internal field, displaying tetragonal symmetry, is thus responsible for the compressed geometry in K2ZnF4:Cu(2+) and the lack of symmetry breaking behind the ligand relaxation. Moreover, we show that the electronic energy gain in this process comes from bonding orbitals and not from antibonding ones. The present

  5. Microstructure and Mechanical Characterization of a Dissimilar Friction-Stir-Welded CuCrZr/CuNiCrSi Butt Joint

    Directory of Open Access Journals (Sweden)

    Youqing Sun

    2018-05-01

    Full Text Available Dissimilar CuNiCrSi and CuCrZr butt joints were successfully frictionstirwelded at constant welding speed of 150 mm/min and rotational speed of 1400 rpm with the CuCrZr alloy or the CuNiCrSi alloy located on the advancing side (AS. The microstructure and mechanical properties of joints were investigated. When the CuCrZr alloy was located on the AS, the area of retreating material in the nugget zone was a little bigger. The Cr solute-rich particles were found in the nugget zone on CuCrZr side (CuCrZr-NZ while a larger density of solute-rich particles identified as the concentration of Cr and Si element was found in the nugget zone on CuNiCrSi side (CuNiCrSi-NZ. The Cr precipitates and δ-Ni2Si precipitates were found in the base metal on CuNiCrSi side (CuNiCrSi-BM but only Cr precipitates can be observed in the base metal on CuCrZr side (CuCrZr-BM. Precipitates were totally dissolved into Cu matrix in both CuCrZr-NZ and CuNiCrSi-NZ, which led to a sharp decrease in both micro-hardness and tensile strength from BM to NZ. When the CuNiCrSi was located on the AS, the tensile testing results showed the fracture occurred at the CuCrZr-NZ, while the fracture was found at the mixed zone of CuNiCrSi-NZ and CuCrZr-NZ for the other case.

  6. Toward Rational Design of Cu/SSZ-13 Selective Catalytic Reduction Catalysts: Implications from Atomic-Level Understanding of Hydrothermal Stability

    Energy Technology Data Exchange (ETDEWEB)

    Song, James [Institute; The; amp, Linda Voiland School of Chemical Engineering and Bioengineering, Washington State University, P.O. Box 646515, Pullman, Washington 99164, United States; Wang, Yilin [Institute; Walter, Eric D. [Environmental; Washton, Nancy M. [Environmental; Mei, Donghai [Institute; Kovarik, Libor [Environmental; Engelhard, Mark H. [Environmental; Prodinger, Sebastian [Institute; Wang, Yong [Institute; The; amp, Linda Voiland School of Chemical Engineering and Bioengineering, Washington State University, P.O. Box 646515, Pullman, Washington 99164, United States; Peden, Charles H. F. [Institute; Gao, Feng [Institute

    2017-11-03

    The hydrothermal stability of Cu/SSZ-13 SCR catalysts has been extensively studied, yet atomic level understanding of changes to the zeolite support and the Cu active sites during hydrothermal aging are still lacking. In this work, via the utilization of spectroscopic methods including solid-state 27Al and 29Si NMR, EPR, DRIFTS, and XPS, together with imaging and elemental mapping using STEM, detailed kinetic analyses, and theoretical calculations with DFT, various Cu species, including two types of isolated active sites and CuOx clusters, were precisely quantified for samples hydrothermally aged under varying conditions. This quantification convincingly confirms the exceptional hydrothermal stability of isolated Cu2+-2Z sites, and the gradual conversion of [Cu(OH)]+-Z to CuOx clusters with increasing aging severity. This stability difference is rationalized from the hydrolysis activation barrier difference between the two isolated sites via DFT. Discussions are provided on the nature of the CuOx clusters, and their possible detrimental roles on catalyst stability. Finally, a few rational design principles for Cu/SSZ-13 are derived rigorously from the atomic-level understanding of this catalyst obtained here. The authors gratefully acknowledge the US Department of Energy (DOE), Energy Efficiency and Renewable Energy, Vehicle Technologies Office for the support of this work. Computing time was granted by a user proposal at the William R. Wiley Environmental Molecular Sciences Laboratory (EMSL) and by the National Energy Research Scientific Computing Center (NERSC). The experimental studies described in this paper were performed in the EMSL, a national scientific user facility sponsored by the DOE’s Office of Biological and Environmental Research and located at Pacific Northwest National Laboratory (PNNL). PNNL is operated for the US DOE by Battelle.

  7. Identification of levels above 6{sup -} isomeric state in {sup 66}Cu

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Purnima; Palit, R.; Biswas, S.; Saha, S. [Tata Institute of Fundamental Research, Department of Nuclear and Atomic Physics, Mumbai (India); Choudhury, D. [Horia Hulubei National Institute for Physics and Nuclear Engineering, ELI-NP, Magurele (Romania); Srivastava, P.C. [Indian Institute of Technology Roorkee, Department of Physics, Roorkee (India); Sethi, J. [Tata Institute of Fundamental Research, Department of Nuclear and Atomic Physics, Mumbai (India); University of Maryland, Department of Chemistry and Biochemistry, College Park, MD (United States)

    2017-04-15

    Excited states in odd-odd {sup 66}Cu were investigated in a reaction between a 136 MeV {sup 30}Si beam and a {sup 65}Cu target with the Indian National Gamma Array. Six new transitions have been identified including four transitions feeding the 600 ns 6{sup -} isomeric state from an investigation of prompt-prompt and prompt-delayed coincidence events. The results of the present work have extended the level structure of this nucleus up to I{sup π} = (9{sup -}). In addition, new information on the set of πp{sub 3/2}νg{sub 9/2} multiplets in this nucleus have been added. Shell model calculations were performed within the fpg{sub 9/2} and f{sub 5/2}pg{sub 9/2} model spaces. The results of shell model calculations using the fpg{sub 9/2} model space have been observed to be in better agreement with experimental excitation energies up to the highest spin observed. The results of the present work highlight the necessity of f{sub 7/2} proton holes to describe the positive as well as negative parity states in {sup 66}Cu. (orig.)

  8. Cu ion disordering in high ionic conductor Rb4Cu16I7Cl13

    International Nuclear Information System (INIS)

    Kawaji, Hitoshi; Atake, Tooru; Kanno, Ryoji; Izumi, Fujio; Yamamoto, Osamu.

    1993-01-01

    The properties of a high ionic conductor Rb 4 Cu 16 I 7+x Cl 13-x were studied by neutron and X-ray diffraction, and heat capacity measurements. The structure parameters of Rb 4 Cu 16 I 7.2 Cl 12.8 were obtained by the Rietveld analysis of TOF neutron diffraction data between 50 and 300 K, which showed gradual excitation of migration of Cu ions from Cu(3) site into Cu(2) site with increasing temperature from about 100 K to room temperature. The heat capacity was measured between 10 and 300 K using a high precision adiabatic calorimeter. An abnormal increase was observed in the heat capacity curve above about 100 K. The excess heat capacity showed a broad anomaly with a maximum at about 190 K. The measurements were also made of Rb 4 Cu 16 I 7 Cl 13 which showed slight different properties from Rb 4 Cu 16 I 7.2 Cl 12.8 . (author)

  9. Cu k-edge studies of the charge carries in Th-doped cuprate system R2-xThxCuO4-δ (R = Nd, Sm and Gd)

    International Nuclear Information System (INIS)

    Liang, G.; Yi, Y.; Jardim, R.F.; Wang, L.V.

    1999-01-01

    To further study the charge carrier concentration in electron doped cuprate superconductors, a systematic x-ray absorption near edge structure (XANES) measurement has been carried out on Th-doped superconductor system R 2-x Th x CuO 4-δ (R = Nd, Sm, and Gd). The XANES results show that, similar to the Ce-doped compounds, while the intensity of the Cu 1+ 4p π feature increase with the increase of the Th doping level x, the intensities of the Cu 2+ 4p π and 4p σ features decreases. This clearly indicates that the electrons doped by the Th atoms are injected into the local Cu 3d-orbitals. The normalized Cu 1+ 4p π intensity data show that the Cu 1+ concentration in the Th-doped compound series with different R-elements is linearly proportional to the Th doping-level x. The data suggest that both Ce and Th donate the same fraction of electrons into the Cu sites

  10. Physics of bandgap formation in Cu-Sb-Se based novel thermoelectrics: the role of Sb valency and Cu d levels.

    Science.gov (United States)

    Do, Dat; Ozolins, Vidvuds; Mahanti, S D; Lee, Mal-Soon; Zhang, Yongsheng; Wolverton, C

    2012-10-17

    In this paper we discuss the results of ab initio electronic structure calculations for Cu(3)SbSe(4) (Se4) and Cu(3)SbSe(3) (Se3), two narrow bandgap semiconductors of thermoelectric interest. We find that Sb is trivalent in both the compounds, in contrast to a simple nominal valence (ionic) picture which suggests that Sb should be 5 + in Se4. The gap formation in Se4 is quite subtle, with hybridization between Sb 5s and the neighboring Se 4s, 4p orbitals, position of Cu d states, and non-local exchange interaction, each playing significant roles. Thermopower calculations show that Se4 is a better p-type system. Our theoretical results for Se4 agree very well with recent experimental results obtained by Skoug et al (2011 Sci. Adv. Mater. 3 602).

  11. Interface structure and properties of CNTs/Cu composites fabricated by electroless deposition and spark plasma sintering

    Science.gov (United States)

    Wang, Hu; Zhang, Zhao-Hui; Hu, Zheng-Yang; Song, Qi; Yin, Shi-Pan

    2018-01-01

    In this paper, we fabricated a novel copper matrix composites reinforced by carbon nanotubes (CNTs) using electroless deposition (ED) and spark plasma sintering technique. Microstructure, mechanical, electric conductivity, and thermal properties of the CNTs/Cu composites were investigated. The results show that a favorable interface containing C-O and O-Cu bond was formed between CNTs and matrix when the CNTs were coated with nano-Cu by ED method. Thus, we accomplished the uniformly dispersed CNTs in the CNTs/Cu powders and compacted composites, which eventually leads to the enhancement of the mechanical properties of the CNTs/Cu composites in the macro-scale environment. However, the interface structure can hinder the movement of carriers and free electrons and increase the interface thermal resistance, which leads to modest decrease of electrical and thermal conductivity of the CNTs/Cu composites.

  12. Valence-band and core-level photoemission study of single-crystal Bi2CaSr2Cu2O8 superconductors

    International Nuclear Information System (INIS)

    Shen, Z.; Lindberg, P.A.P.; Wells, B.O.; Mitzi, D.B.; Lindau, I.; Spicer, W.E.; Kapitulnik, A.

    1988-01-01

    High-quality single crystals of Bi 2 CaSr 2 Cu 2 O 8 superconductors have been prepared and cleaved in ultrahigh vacuum. Low-energy electron diffraction measurements show that the surface structure is consistent with the bulk crystal structure. Ultraviolet photoemission and x-ray photoemission experiments were performed on these well-characterized sample surfaces. The valence-band and the core-level spectra obtained from the single-crystal surfaces are in agreement with spectra recorded from polycrystalline samples, justifying earlier results from polycrystalline samples. Cu satellites are observed both in the valence band and Cu 2p core level, signaling the strong correlation among the Cu 3d electrons. The O 1s core-level data exhibit a sharp, single peak at 529-eV binding energy without any clear satellite structures

  13. Electroluminescent Cu-doped CdS quantum dots

    NARCIS (Netherlands)

    Stouwdam, J.W.; Janssen, R.A.J.

    2009-01-01

    Incorporating Cu-doped CdS quantum dots into a polymer host produces efficient light-emitting diodes. The Cu dopant creates a trap level that aligns with the valence band of the host, enabling the direct injection of holes into the quantum dots, which act as emitters. At low current densities, the

  14. Virtual thermal expansion coefficient of Cu precipitated in the Fe95Cu5 alloy

    International Nuclear Information System (INIS)

    Koeszegi, L.; Somogyvari, Z.

    1999-01-01

    Complete text of publication follows. Precipitations on grain boundaries play very important role in the formation of material's characteristics like embrittlement, durability etc. It was already shown [1] that Cu precipitations are under different stress conditions than the bulk material. The situation is more complicated in the case when a construction is exposed to temperature changes as well. In that case not only the residual stresses during the fabrication but the different thermal expansion coefficients can produce additional problems. This situation was modelled using Fe 95 Cu 5 alloy where Cu precipitates on the grain boundaries. The alloy was produced by high-frequency melting and an extra heat treatment was used to produce a quasi-equilibrium state. Pure Cu was also measured to compare the behaviours. Cu(111) Bragg peak was measured at different temperatures by high resolution neutron diffraction. The measurements were carried out on the G5-2 spectrometer at LLB in Saclay. Measurements show that not only residual stress can be recognised on the Cu precipitates but the thermal expansion coefficient of these precipitates definitly differ from the ones of pure Cu. (author)

  15. Activation of CuZn superoxide dismutases from Caenorhabditis elegans does not require the copper chaperone CCS.

    Science.gov (United States)

    Jensen, Laran T; Culotta, Valeria Cizewski

    2005-12-16

    Reactive oxygen species are produced as the direct result of aerobic metabolism and can cause damage to DNA, proteins, and lipids. A principal defense against reactive oxygen species involves the superoxide dismutases (SOD) that act to detoxify superoxide anions. Activation of CuZn-SODs in eukaryotic cells occurs post-translationally and is generally dependent on the copper chaperone for SOD1 (CCS), which inserts the catalytic copper cofactor and catalyzes the oxidation of a conserved disulfide bond that is essential for activity. In contrast to other eukaryotes, the nematode Caenorhabditis elegans does not contain an obvious CCS homologue, and we have found that the C. elegans intracellular CuZn-SODs (wSOD-1 and wSOD-5) are not dependent on CCS for activation when expressed in Saccharomyces cerevisiae. CCS-independent activation of CuZn-SODs is not unique to C. elegans; however, this is the first organism identified that appears to exclusively use this alternative pathway. As was found for mammalian SOD1, wSOD-1 exhibits a requirement for reduced glutathione in CCS-independent activation. Unexpectedly, wSOD-1 was inactive even in the presence of CCS when glutathione was depleted. Our investigation of the cysteine residues that form the disulfide bond in wSOD-1 suggests that the ability of wSODs to readily form this disulfide bond may be the key to obtaining high levels of activation through the CCS-independent pathway. Overall, these studies demonstrate that the CuZn-SODs of C. elegans have uniquely evolved to acquire copper without the copper chaperone and this may reflect the lifestyle of this organism.

  16. Loss of reserves of Cu in liver when Cu supplements are withdrawn from dairy herds in the Waikato region.

    Science.gov (United States)

    Hittmann, A R; Grace, N D; Knowles, S O

    2012-03-01

    To monitor the consequences of withdrawing mineral Cu supplements from two dairy herds with initially high concentrations of Cu in liver. Two herds were selected from dairy farms in the Waikato region of New Zealand that participated in an earlier survey of Cu supplementation practices and Cu status of dairy cows. The herds were fed pasture, grass and maize silage, plus palm kernel expeller (PKE) containing 25-30 mg Cu/kg dry matter (DM) fed at 2-4 kg/cow/day. No mineral Cu supplements were supplied from January 2009. Pasture samples were collected for mineral analysis in September 2008 and April 2009. Concentration of Cu in liver biopsies from the same 9-10 cows per herd was measured on three occasions between April 2009 and May 2010. Pastures on both farms contained 10 mg Cu/kg DM, 0.1-0.5 mg Mo/kg DM and 3.5-4.0 g S/kg DM. The initial herd mean concentrations of Cu in liver were 1,500 (SD 590) and 1,250 (SD 640) μmol Cu/kg fresh tissue. In the absence of mineral Cu supplements, those mean concentrations decreased over 12 months to 705 (SD 370) and 1,120 (SD 560) μmol Cu/kg fresh tissue, respectively. For cows in the first herd, the rate of depletion of liver Cu reserves was influenced by initial concentration of Cu, such that high concentration led to faster loss according to first-order kinetics. Mineral Cu supplementation was not necessary over 12 months for two dairy herds with mean concentrations of Cu in liver >1,250 μmol Cu/kg fresh tissue, grazing pastures containing 10 mg Cu/kg DM and concentrations of Mo <1 mg/kg DM. The quantity and particularly the duration of feeding PKE appeared to be a factor in whether or not the herd lost substantial reserves of Cu in liver during the year. However, the Cu status of both herds in this study was more than adequate to support late pregnancy and mating. CLINICAL REVELANCE: Copper status of the herd should be monitored and on-farm management of Cu nutrition should take into account all sources contributing to

  17. Low-Temperature Bonding of Bi0.5Sb1.5Te3 Thermoelectric Material with Cu Electrodes Using a Thin-Film In Interlayer

    Science.gov (United States)

    Lin, Yan-Cheng; Yang, Chung-Lin; Huang, Jing-Yi; Jain, Chao-Chi; Hwang, Jen-Dong; Chu, Hsu-Shen; Chen, Sheng-Chi; Chuang, Tung-Han

    2016-09-01

    A Bi0.5Sb1.5Te3 thermoelectric material electroplated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode at low temperatures of 448 K (175 °C) to 523 K (250 °C) using a 4- μm-thick In interlayer under an external pressure of 3 MPa. During the bonding process, the In thin film reacted with the Ag layer to form a double layer of Ag3In and Ag2In intermetallic compounds. No reaction occurred at the Bi0.5Sb1.5Te3/Ni interface, which resulted in low bonding strengths of about 3.2 MPa. The adhesion of the Bi0.5Sb1.5Te3/Ni interface was improved by precoating a 1- μm Sn film on the surface of the thermoelectric element and preheating it at 523 K (250 °C) for 3 minutes. In this case, the bonding strengths increased to a range of 9.1 to 11.5 MPa after bonding at 473 K (200 °C) for 5 to 60 minutes, and the shear-tested specimens fractured with cleavage characteristics in the interior of the thermoelectric material. The bonding at 448 K (175 °C) led to shear strengths ranging from 7.1 to 8.5 MPa for various bonding times between 5 and 60 minutes, which were further increased to the values of 10.4 to 11.7 MPa by increasing the bonding pressure to 9.8 MPa. The shear strengths of Bi0.5Sb1.5Te3/Cu joints bonded with the optimized conditions of the modified solid-liquid interdiffusion bonding process changed only slightly after long-term exposure at 473 K (200 °C) for 1000 hours.

  18. Thermodynamic optimization of the Cu-Nd system

    International Nuclear Information System (INIS)

    Wang Peisheng; Zhou Liangcai; Du Yong; Xu Honghui; Liu Shuhong; Chen Li; Ouyang Yifang

    2011-01-01

    Research highlights: → The enthalpies of formation of the compounds Cu 6 Nd, Cu 5 Nd, Cu 2 Nd and αCuNd were calculated using DFT. → The thermodynamic constraints to eliminate the artificial phase relations were imposed during the thermodynamic optimization procedure. → The Cu-Nd system was optimized under the thermodynamic constraints. - Abstract: The thermodynamic constraints to eliminate artificial phase relations were introduced with the Cu-Nd system as an example. The enthalpies of formation of the compounds Cu 6 Nd, Cu 5 Nd, Cu 2 Nd and αCuNd are calculated using density functional theory. Taking into account all the experimental data and the first-principles calculated enthalpies of formation of these compounds, the thermodynamic optimization of the Cu-Nd system was performed under the proposed thermodynamic constraints. It is demonstrated that the thermodynamic constraints are critical to obtain a set of thermodynamic parameters for the Cu-Nd system, which can avoid the appearance of all the artificial phase relations.

  19. Transient Liquid Phase Bonding of Cu-Cr-Zr-Ti Alloy Using Ni and Mn Coatings: Microstructural Evolution and Mechanical Properties

    Science.gov (United States)

    Venkateswaran, T.; Ravi, K. R.; Sivakumar, D.; Pant, Bhanu; Janaki Ram, G. D.

    2017-08-01

    High-strength copper alloys are used extensively in the regenerative cooling parts of aerospace structures. Transient liquid phase (TLP) bonding of a Cu-Cr-Zr-Ti alloy was attempted in the present study using thin layers of elemental Ni and Mn coatings applied by electroplating. One of the base metals was given a Ni coating of 4 µm followed by a Mn coating of 15 µm, while the other base metal was given only the Ni coating (4 µm). The bonding cycle consisted of the following: TLP stage—heating to 1030 °C and holding for 15 min; homogenization stage—furnace cooling to 880 °C and holding for 2 h followed by argon quenching to room temperature. Detailed microscopy and electron probe microanalysis analysis of the brazed joints were carried out. The braze metal was found to undergo isothermal solidification within the 15 min of holding time at 1030 °C. At the end of TLP stage, the braze metal showed a composition of Cu-17Ni-9Mn (wt.%) at the center of the joint with a steep gradient in Ni and Mn concentrations from the center of the braze metal to the base metal interfaces. After holding for 2 h at 880 °C (homogenization stage), the compositional gradients were found to flatten significantly and the braze metal was found to develop a homogeneous composition of Cu-11Ni-7Mn (wt.%) at the center of the joint. In lap-shear tests, failures were always found to occur in the base metal away from the brazed region. The copper alloy base metal was found to undergo significant grain coarsening due to high-temperature exposure during brazing and, consequently, suffer considerable reduction in yield strength.

  20. Cu-segregation at the Q'/α-Al interface in Al-Mg-Si-Cu alloy

    International Nuclear Information System (INIS)

    Matsuda, Kenji; Teguri, Daisuke; Uetani, Yasuhiro; Sato, Tatsuo; Ikeno, Susumu

    2002-01-01

    Cu segregation was detected at the Q ' /α-Al interface in an Al-Mg-Si-Cu alloy by energy-filtered transmission electron microscopy. By contrast, in a Cu-free Al-Mg-Si alloy no segregation was observed at the interface between the matrix and Type-C precipitate

  1. Cu and Cu(Mn) films deposited layer-by-layer via surface-limited redox replacement and underpotential deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fang, J.S., E-mail: jsfang@nfu.edu.tw [Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan (China); Sun, S.L. [Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan (China); Cheng, Y.L. [Department of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, Taiwan (China); Chen, G.S.; Chin, T.S. [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China)

    2016-02-28

    Graphical abstract: - Abstract: The present paper reports Cu and Cu(Mn) films prepared layer-by-layer using an electrochemical atomic layer deposition (ECALD) method. The structure and properties of the films were investigated to elucidate their suitability as Cu interconnects for microelectronics. Previous studies have used primarily a vacuum-based atomic layer deposition to form a Cu metallized film. Herein, an entirely wet chemical process was used to fabricate a Cu film using the ECALD process by combining underpotential deposition (UPD) and surface-limited redox replacement (SLRR). The experimental results indicated that an inadequate UPD of Pb affected the subsequent SLRR of Cu and lead to the formation of PbSO{sub 4}. A mechanism is proposed to explain the results. Layer-by-layer deposition of Cu(Mn) films was successfully performed by alternating the deposition cycle-ratios of SLRR-Cu and UPD-Mn. The proposed self-limiting growth method offers a layer-by-layer wet chemistry-based deposition capability for fabricating Cu interconnects.

  2. Reaction pathways of furfural, furfuryl alcohol and 2-methylfuran on Cu(111) and NiCu bimetallic surfaces

    Science.gov (United States)

    Xiong, Ke; Wan, Weiming; Chen, Jingguang G.

    2016-10-01

    Hydrodeoxygenation (HDO) is an important reaction for converting biomass-derived furfural to value-added 2-methylfuran, which is a promising fuel additive. In this work, the HDO of furfural to produce 2-methylfuran occurred on the NiCu bimetallic surfaces prepared on either Ni(111) or Cu(111). The reaction pathways of furfural were investigated on Cu(111) and Ni/Cu(111) surfaces using density functional theory (DFT) calculations, temperature-programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS) experiments. These studies provided mechanistic insights into the effects of bimetallic formation on enhancing the HDO activity. Specifically, furfural weakly adsorbed on Cu(111), while it strongly adsorbed on Ni/Cu(111) through an η2(C,O) configuration, which led to the HDO of furfural on Ni/Cu(111). The ability to dissociate H2 on Ni/Cu(111) is also an important factor for enhancing the HDO activity over Cu(111).

  3. Substrate type < 111 >-Cu{sub 2}O/<0001 >-ZnO photovoltaic device prepared by photo-assisted electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Zamzuri, Mohd, E-mail: zamzuri@tf.me.tut.ac.jp [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); School of Manufacturing Eng., Universiti Malaysia Perlis, Kampus Tetap Pauh Putra, Jln Arau-Changlun, 02600 Arau, Perlis (Malaysia); Sasano, Junji [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); Mohamad, Fariza Binti [Faculty of Electrical & Electronic Eng., University Tun Hussein Onn Malaysia, 86400, Parit Raja, Batu Pahat, Johor (Malaysia); Izaki, Masanobu [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan)

    2015-11-30

    The substrate-type < 0001 > ZnO/<111 > Cu{sub 2}O photovoltaic (PV) device has been constructed by electrodeposition of a < 111 >-p-Cu{sub 2}O layer on an Au(111)/Si wafer substrate followed by stacking the n-ZnO layer by electrodeposition during light irradiation in aqueous solutions. The PV device was fabricated by stacking the Al:ZnO-window by sputtering and the top Al electrode by vacuum evaporation. The < 0001 >-ZnO layer was composed of aggregates of hexagonal columnar grains grown in the direction normal to the surface, and pores could be observed between the ZnO grains at the deposition time last 1800 s. The < 0001 >-ZnO/<111 >-Cu{sub 2}O PV device showed a photovoltaic performance under AM1.5 illumination, and showed the improved short-circuit current density of 5.87 mA cm{sup −2} by stacking the AZO-TCO due to the increase in the diffusion length of the carrier. - Highlights: • Substrate type ZnO/Cu{sub 2}O photovoltaic devices only by electrodeposition • ZnO layer was stacked on the Cu{sub 2}O layer by photo-assisted electrodeposition. • AZO/ZnO/Cu{sub 2}O photovoltaic devices with a short-circuit current density of 5.87 mA cm{sup −2}.

  4. Ni Nanobuffer Layer Provides Light-Weight CNT/Cu Fibers with Superior Robustness, Conductivity, and Ampacity.

    Science.gov (United States)

    Zou, Jingyun; Liu, Dandan; Zhao, Jingna; Hou, Ligan; Liu, Tong; Zhang, Xiaohua; Zhao, Yonghao; Zhu, Yuntian T; Li, Qingwen

    2018-03-07

    Carbon nanotube (CNT) fiber has not shown its advantage as next-generation light-weight conductor due to the large contact resistance between CNTs, as reflected by its low conductivity and ampacity. Coating CNT fiber with a metal layer like Cu has become an effective solution to this problem. However, the weak CNT-Cu interfacial bonding significantly limits the mechanical and electrical performances. Here, we report that a strong CNT-Cu interface can be formed by introducing a Ni nanobuffer layer before depositing the Cu layer. The Ni nanobuffer layer remarkably promotes the load and heat transfer efficiencies between the CNT fiber and Cu layer and improves the quality of the deposited Cu layer. As a result, the new composite fiber with a 2 μm thick Cu layer can exhibit a superhigh effective strength >800 MPa, electrical conductivity >2 × 10 7 S/m, and ampacity >1 × 10 5 A/cm 2 . The composite fiber can also sustain 10 000 times of bending and continuously work for 100 h at 90% ampacity.

  5. Cu-Si bilayers as storage medium in optical recording

    International Nuclear Information System (INIS)

    Kuiper, A.E. T.; Vullers, R.J.M.; Pasquariello, D.; Naburgh, E.P.

    2005-01-01

    Instead of a phase change or a dye layer, a Cu/Si bilayer can be applied as the recording medium in a write-once Blu-ray Disc. The write process basically comprises the formation of a CuSi alloy containing 25-30 at. % Si, while any excess of Si is left behind as unreacted film. Auger analyses of the laser-written layers indicate that recording consists primarily of the diffusion of Si into Cu. The data allow for discrimination between the various models presented in literature for Cu/Si-based recording and to optimize the stack. Very low jitter levels of typically 4% proved to be achievable with equally thick films of Cu and Si as recording medium

  6. The effect of Na on Cu-K-In-Se thin film growth

    Science.gov (United States)

    Muzzillo, Christopher P.; Tong, Ho Ming; Anderson, Timothy J.

    2018-04-01

    Co-evaporation of Cu-KF-In-Se was performed on substrates with varied Na supply. Compositions of interest for photovoltaic absorbers were studied, with ratios of (K + Cu)/In ∼ 0.85 and K/(K + Cu) ∼ 0-0.57. Bare soda-lime glass (SLG) substrates had the highest Na supply as measured by secondary ion mass spectrometry, while SLG/Mo and SLG/SiO2/Mo substrates led to 3x and 3000x less Na in the growing film, respectively. Increased Na supply favored Cu1-xKxInSe2 (CKIS) alloy formation as proven by X-ray diffraction (XRD), while decreased Na supply favored the formation of CuInSe2 + KInSe2 mixed-phase films. Scanning electron microscopy and energy dispersive X-ray spectroscopy revealed the KInSe2 precipitates to be readily recognizable planar crystals. Extrinsic KF addition during film growth promoted diffusion of Na out from the various substrates and into the growing film, in agreement with previous reports. Time-resolved photoluminescence showed enhanced minority carrier lifetimes for films with moderate K compositions (0.04 interdependency can be used to engineer alkali metal bonding in Cu(In,Ga)(Se,S)2 absorbers to optimize both initial and long-term photovoltaic power generation.

  7. Metallographic anlaysis and strength investigation of different Be-Cu joints in the temperature range RT-3500C

    International Nuclear Information System (INIS)

    Gervash, A.A.; Giniatouline, R.N.; Mazul, I.V.

    1995-01-01

    The goal of this work is to estimate the strength and structure of different Be-Cu joining techniques. Brazing, diffusion bonding and joint rolling methods were chosen as ITER Be-Cu joint method candidates. Selected for ITER application Be-Cu joints were produced as technological plates (30-50 mm x 50-100 mm x thickness). AR samples for farther investigations were cutted out from initial technological plates. To compare mechanical strength of selected Be-Cu joints tensile and shearing tests of chosen candidates were carried out in the temperature range RT - 350 degrees C. The metallographic analysis of Be-Cu crosssection was also done. Preliminary results of these tests as well as metallographic analysis data are presented. The industrial possibilities of producing required for ITER full scale Be-Cu joints are discussed

  8. Sulfur induced Cu4 tetramers on Cu(111)

    DEFF Research Database (Denmark)

    Foss, M.; Feidenhans'l, R.; Nielsen, M.

    1997-01-01

    The structures of the Cu(111) and the Cu(111)(root 7 x root 7)R19.1 degrees-S reconstructions have been studied by surface X-ray diffraction and two new structural models are proposed. Although the unit cells for the two structures are quite different, a high degree of similarity has been reveale...

  9. In-situ observation of Cu-Pt core-shell nanoparticles in the atomic scale by XAFS

    International Nuclear Information System (INIS)

    Zheng, Xusheng; Liu, Shoujie; Chen, Xing; Cheng, Jie; Ye, Qing; Pan, Zhiyun; Chu, Wangsheng; Wu, Ziyu; Marcelli, Augosto

    2013-01-01

    Bimetallic nanoparticles play an important role in potential industrial applications, such as catalysis, optoelectronics, information storage and biological labeling. Herein, homogeneous Cu-Pt core-shell nanoparticles with the averaged size of 8 nm have been synthesized by chemical methods. Cu atoms diffusion process, which motivated by heating, was observed in-situ by using temperature-dependent x-ray absorption fine-structure (XAFS) spectroscopy. Results show that Cu diffuse gradually from Cu core to Pt shell in these nanoparticles with increasing temperature. We also found the surface ligand (O) bonded Pt at the room temperature and were removed gradually by heating the sample. The analysis of the diffusion process in bimetallic nanoparticles will provide important guideline for their designing and tuning.

  10. Diffusion characteristics in the Cu-Ti system

    Energy Technology Data Exchange (ETDEWEB)

    Laik, Arijit; Kale, Gajanan Balaji [Bhabha Atomic Reseach Centre, Mumbai (India). Materials Science Div.; Bhanumurthy, Karanam [Bhabha Atomic Reseach Centre, Mumbai (India). Scientific Information Resource Div.; Kashyap, Bhagwati Prasad [Indian Institute of Technology Bombay, Mumbai (India). Dept. of Metallurgical Engineering

    2012-06-15

    The formation and growth of intermetallic compounds by diffusion reaction of Cu and Ti were investigated in the temperature range 720 - 860 C using bulk diffusion couples. Only four, out of the seven stable intermediate compounds of the Cu-Ti system, were formed in the diffusion reaction zone in the sequence CuTi, Cu{sub 4}Ti, Cu{sub 4}Ti{sub 3} and CuTi{sub 2}. The activation energies required for the growth of these compounds were determined. The diffusion characteristics of Cu{sub 4}Ti, CuTi and Cu{sub 4}Ti{sub 3} and Cu(Ti) solid solution were evaluated. The activation energies for diffusion in these compounds were 192.2, 187.7 and 209.2 kJ mol{sup -1} respectively, while in Cu(Ti), the activation energy increased linearly from 201.0 kJ mol{sup -1} to 247.5 kJ mol{sup -1} with increasing concentration of Ti, in the range 0.5 - 4.0 at.%. The impurity diffusion coefficient of Ti in Cu and its temperature dependence were also estimated. A correlation between the impurity diffusion parameters for several elements in Cu matrix has been established. (orig.)

  11. Syntheses, structures, and properties of imidazolate-bridged Cu(II)-Cu(II) and Cu(II)-Zn(II) dinuclear complexes of a single macrocyclic ligand with two hydroxyethyl pendants.

    Science.gov (United States)

    Li, Dongfeng; Li, Shuan; Yang, Dexi; Yu, Jiuhong; Huang, Jin; Li, Yizhi; Tang, Wenxia

    2003-09-22

    The imidazolate-bridged homodinuclear Cu(II)-Cu(II) complex, [(CuimCu)L]ClO(4).0.5H(2)O (1), and heterodinuclear Cu(II)-Zn(II) complex, [(CuimZnL(-)(2H))(CuimZnL(-)(H))](ClO(4))(3) (2), of a single macrocyclic ligand with two hydroxyethyl pendants, L (L = 3,6,9,16,19,22-hexaaza-6,19-bis(2-hydroxyethyl)tricyclo[22,2,2,2(11,14)]triaconta-1,11,13,24,27,29-hexaene), have been synthesized as possible models for copper-zinc superoxide dismutase (Cu(2),Zn(2)-SOD). Their crystal structures analyzed by X-ray diffraction methods have shown that the structures of the two complexes are markedly different. Complex 1 crystallizes in the orthorhombic system, containing an imidazolate-bridged dicopper(II) [Cu-im-Cu](3+) core, in which the two copper(II) ions are pentacoordinated by virtue of an N4O environment with a Cu.Cu distance of 5.999(2) A, adopting the geometry of distorted trigonal bipyramid and tetragonal pyramid, respectively. Complex 2 crystallizes in the triclinic system, containing two similar Cu-im-Zn cores in the asymmetric unit, in which both the Cu(II) and Zn(II) ions are pentacoordinated in a distorted trigonal bipyramid geometry, with the Cu.Zn distance of 5.950(1)/5.939(1) A, respectively. Interestingly, the macrocyclic ligand with two arms possesses a chairlike (anti) conformation in complex 1, but a boatlike (syn) conformation in complex 2. Magnetic measurements and ESR spectroscopy of complex 1 have revealed the presence of an antiferromagnetic exchange interaction between the two Cu(II) ions. The ESR spectrum of the Cu(II)-Zn(II) heterodinuclear complex 2 displayed a typical signal for mononuclear trigonal bipyramidal Cu(II) complexes. From pH-dependent ESR and electronic spectroscopic studies, the imidazolate bridges in the two complexes have been found to be stable over broad pH ranges. The cyclic voltammograms of the two complexes have been investigated. Both of the two complexes can catalyze the dismutation of superoxide and show rather high activity.

  12. ZrCu2P2 and HfCu2P2 phosphides and their crystal structure

    International Nuclear Information System (INIS)

    Lomnitskaya, Ya.F.

    1986-01-01

    Isostructural ZrCu 2 P 2 and HfCu 2 P 2 compounds are prepared for the first time. X-ray diffraction analysis (of powder, DRON-2.0 diffractometer, FeKsub(α) radiation) was used to study crystal structure of HfCu 2 P 2 phosphide belonging to the CaAl 2 Si 2 structural type (sp. group P anti 3 m 1, R=0.095). Lattice parameters the compounds are as follows: for ZrCu 2 P 2 a=0.3810(1), c=0.6184(5); for HfCu 2 P 2 a=0.3799(1), c=0.6160(2) (nm). Atomic parameters in the HfCu 2 P 2 structure and interatomic distances are determined

  13. Impact parameter dependence of K-shell ionization in Cu-Cu collisions

    International Nuclear Information System (INIS)

    Frank, W.; Jaracz, P.; Kaun, K.-H.; Lenk, M.; Rudiger, J.; Stachura, Z.

    1980-01-01

    The impact parameter dependence of the yield of K-shell vacancy production in 1 MeV/ a.m.u. Cu-Cu collisions has been studied in an X-ray-scattered ion coincidence experiment. The results are compared with existing models for K-vacancy production

  14. I-line stepper based overlay evaluation method for wafer bonding applications

    Science.gov (United States)

    Kulse, P.; Sasai, K.; Schulz, K.; Wietstruck, M.

    2018-03-01

    In the last decades the semiconductor technology has been driven by Moore's law leading to high performance CMOS technologies with feature sizes of less than 10 nm [1]. It has been pointed out that not only scaling but also the integration of novel components and technology modules into CMOS/BiCMOS technologies is becoming more attractive to realize smart and miniaturized systems [2]. Driven by new applications in the area of communication, health and automation, new components and technology modules such as BiCMOS embedded RF-MEMS, high-Q passives, Sibased microfluidics and InP-SiGe BiCMOS heterointegration have been demonstrated [3-6]. In contrast to standard VLSI processes fabricated on front side of the silicon wafer, these new technology modules additionally require to process the backside of the wafer; thus require an accurate alignment between the front and backside of the wafer. In previous work an advanced back to front side alignment technique and implementation into IHP's 0.25/0.13 µm high performance SiGe:C BiCMOS backside process module has been presented [7]. The developed technique enables a high resolution and accurate lithography on the backside of BiCMOS wafer for additional backside processing. In addition to the aforementioned back side process technologies, new applications like Through-Silicon Vias (TSV) for interposers and advanced substrate technologies for 3D heterogeneous integration demand not only single wafer fabrication but also processing of wafer stacks provided by temporary and permanent wafer bonding [8-9]. In this work, the non-contact infrared alignment system of the Nikon® i-line Stepper NSR-SF150 for both alignment and the overlay determination of bonded wafer stacks with embedded alignment marks are used to achieve an accurate alignment between the different wafer sides. The embedded field image alignment (FIA) marks of the interface and the device wafer top layer are measured in a single measurement job. By taking the

  15. Modifikasi Zeolit Dengan Tembaga (Cu) Dan Uji Sifat Katalitiknya Pada Reaksi Esterifikasi

    OpenAIRE

    Arjek, Orien Claudia Handayani; Fatimah, Is

    2017-01-01

    Zeolite modification with Cu has been conducted. Material modification is done by impregnating Cu through a zeolite powder reflux process with CuSO4.5H2O solution so that theoretical Cu concentration is 5% followed by oxidation and reduction of solids. Material characterization was performed by x-ray diffraction analysis (XRD), Fourier Transform Infra-Red (FTIR) and acidity testing of Cu/Zeolite catalyst.The results showed that the crystallinity level of Cu/Zeolite did not change significantl...

  16. Thermal stability of Py/Cu and Co/Cu giant magnetoresistance (GMR) multilayer systems

    Energy Technology Data Exchange (ETDEWEB)

    Vovk, Vitaliy

    2007-07-01

    NiFe/Cu and Co/Cu multilayer systems have been studied regarding the mechanisms of thermal degradation of the giant magnetoresistance effect (GMR). The different thermodynamics of the studied systems results in different mechanisms of the GMR degradation as shown by highest resolution nanoanalysis using the three dimensional wide angle tomographic atom probe. According to the TAP analysis, GMR deterioration in Py/Cu system occurs due to the broadening of the layer interfaces observed at 250 C. In contrast, due to the strong demixing tendency, Co/Cu multilayers remain stable up to 450 C. At higher temperatures ferromagnetic bridging of the neighboring Co layers takes place leading to the GMR breakdown. In both Py/Cu and Co/Cu systems recrystallization is induced at 350-450 C, which is accompanied by a change in the crystallographic orientation from <111> to <100> wire texture. The reaction may be utilized to produce GMR sensor layers of remarkable thermal stability. Although the systems of interest are equivalent in respect of the observed phenomenon, the Ni{sub x}Fe{sub 1-x}/Cu system is chosen for a detailed analysis because it allows a precise control of the lattice constant by varying the Fe content in the Ni{sub x}Fe{sub 1-x} layer. It is shown that the crystallographic reorientation is triggered by the minimization of lattice mismatch elastic energy. Moreover, the counteraction between the elastic and interfacial energy minimizations exerts a critical influence on the recrystallization probability. (orig.)

  17. Mechanochemical synthesis of Cu-Al and methyl orange intercalated Cu-Al layered double hydroxides

    International Nuclear Information System (INIS)

    Qu, Jun; He, Xiaoman; Chen, Min; Hu, Huimin; Zhang, Qiwu; Liu, Xinzhong

    2017-01-01

    In this study, a mechanochemical route to synthesize a Cu-Al layered double hydroxide (LDH) and a methyl orange (MO) intercalated one (MO-LDH) was introduced, in which basic cupric carbonate (Cu_2(OH)_2CO_3) and aluminum hydroxide (Al(OH)_3) with Cu/Al molar ratio at 2/1 was first dry ground for 2 h and then agitated in water or methyl orange solution for another 4 h to obtain the LDH and MO-LDH products without any heating operation. The prepared samples were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), Thermogravimetry (TG), Differential scanning calorimetry (DSC) and Scanning electron microscopy (SEM). The products showed high crystallinity phase of Cu-Al and MO intercalated Cu-Al LDH with no evident impurities, proving that the craft introduced here was facile and effective. The new idea can be applied in other fields to produce organic-inorganic composites. - Highlights: • A facile mechanochemical route to synthesize Cu-Al and MO intercalated Cu-Al LDH. • The products possesses high crystalline of LDH phase with no impure phases. • The dry milling process induces the element substitution between the raw materials. • The agitation operation helps the grain growth of LDH.

  18. Mechanochemical synthesis of Cu-Al and methyl orange intercalated Cu-Al layered double hydroxides

    Energy Technology Data Exchange (ETDEWEB)

    Qu, Jun, E-mail: forsjun@whut.edu.cn [School of Resources and Environmental Engineering, Wuhan University of Technology, Luoshi Road 122, Wuhan, Hubei 430070 (China); He, Xiaoman; Chen, Min; Hu, Huimin [School of Resources and Environmental Engineering, Wuhan University of Technology, Luoshi Road 122, Wuhan, Hubei 430070 (China); Zhang, Qiwu, E-mail: zhangqw@whut.edu.cn [School of Resources and Environmental Engineering, Wuhan University of Technology, Luoshi Road 122, Wuhan, Hubei 430070 (China); Liu, Xinzhong [College of Ecological Environment and Urban Construction, Fujian University of Technology, Fuzhou 350118 China (China)

    2017-04-15

    In this study, a mechanochemical route to synthesize a Cu-Al layered double hydroxide (LDH) and a methyl orange (MO) intercalated one (MO-LDH) was introduced, in which basic cupric carbonate (Cu{sub 2}(OH){sub 2}CO{sub 3}) and aluminum hydroxide (Al(OH){sub 3}) with Cu/Al molar ratio at 2/1 was first dry ground for 2 h and then agitated in water or methyl orange solution for another 4 h to obtain the LDH and MO-LDH products without any heating operation. The prepared samples were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), Thermogravimetry (TG), Differential scanning calorimetry (DSC) and Scanning electron microscopy (SEM). The products showed high crystallinity phase of Cu-Al and MO intercalated Cu-Al LDH with no evident impurities, proving that the craft introduced here was facile and effective. The new idea can be applied in other fields to produce organic-inorganic composites. - Highlights: • A facile mechanochemical route to synthesize Cu-Al and MO intercalated Cu-Al LDH. • The products possesses high crystalline of LDH phase with no impure phases. • The dry milling process induces the element substitution between the raw materials. • The agitation operation helps the grain growth of LDH.

  19. Crystal structure and bonding analysis of (La{sub 0.8}Ca{sub 0.2})(Cr{sub 0.9-x}Co{sub 0.1}Cu{sub x})O{sub 3} ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Thenmozhi, N. [NMSSVN College, Madurai (India). PG and Research Dept. of Physics; Saravanan, R. [The Madura College, Madurai (India). Research Centre and Post Graduate Dept. of Physics; Fu, Yen-Pei [National Dong-Hwa Univ., Hualien, Taiwan (China). Dept. of Materials Science and Engineering

    2017-07-01

    In this article, structural properties and bonding behaviours of codoped lanthanum chromites (La{sub 0.8}Ca{sub 0.2})(Cr{sub 0.9-x}Co{sub 0.1}Cu{sub x})O{sub 3} (x=0.00, 0.03, and 0.12) were investigated in detail. Polycrystalline chromite samples (La{sub 0.8}Ca{sub 0.2})(Cr{sub 0.9-x}Co{sub 0.1}Cu{sub x})O{sub 3} (x=0.00, 0.03, and 0.12) were prepared by a standard solid-state reaction process. The synthesised samples were characterised for their structural, morphological, optical, and magnetic properties using powder XRD, SEM/EDS, UV-Vis, and VSM. XRD data showed that the samples were crystallised into a single phase with orthorhombic structure. Powder profile refinement analysis suggested the reduction in lattice parameters and cell volume with the addition of Cu. The electron density distributions and the bonding features of the prepared samples have been investigated using maximum entropy method (MEM). The mid bond electron density values revealed the enhancement of ionic nature between lanthanum and oxygen ions and a reduction in covalent nature between chromium and oxygen ions. Heterogeneous distribution of particles with different sizes was observed through SEM micrographs. EDS spectra confirms the presence of constituent elements in the prepared samples. Optical band gap values are decreasing with the addition of Cu. Antiferromagnetic ordering was observed from M-H curves obtained at room temperature. The structural and the magnetic properties are correlated.

  20. Elemental separation in nanocrystalline Cu-Al alloys

    Science.gov (United States)

    Wang, Y. B.; Liao, X. Z.; Zhao, Y. H.; Cooley, J. C.; Horita, Z.; Zhu, Y. T.

    2013-06-01

    Nanocrystallization by high-energy severe plastic deformation has been reported to increase the solubility of alloy systems and even to mix immiscible elements to form non-equilibrium solid solutions. In this letter, we report an opposite phenomenon—nanocrystallization of a Cu-Al single-phase solid solution by high-pressure torsion separated Al from the Cu matrix when the grain sizes are refined to tens of nanometers. The Al phase was found to form at the grain boundaries of nanocrystalline Cu. The level of the separation increases with decreasing grain size, which suggests that the elemental separation was caused by the grain size effect.

  1. Metal-ligand delocalization and spin density in the CuCl2 and [CuCl4](2-) molecules: Some insights from wave function theory.

    Science.gov (United States)

    Giner, Emmanuel; Angeli, Celestino

    2015-09-28

    The aim of this paper is to unravel the physical phenomena involved in the calculation of the spin density of the CuCl2 and [CuCl4](2-) systems using wave function methods. Various types of wave functions are used here, both variational and perturbative, to analyse the effects impacting the spin density. It is found that the spin density on the chlorine ligands strongly depends on the mixing between two types of valence bond structures. It is demonstrated that the main difficulties found in most of the previous studies based on wave function methods come from the fact that each valence bond structure requires a different set of molecular orbitals and that using a unique set of molecular orbitals in a variational procedure leads to the removal of one of them from the wave function. Starting from these results, a method to compute the spin density at a reasonable computational cost is proposed.

  2. DO22-(Cu,Ni)3Sn intermetallic compound nanolayer formed in Cu/Sn-nanolayer/Ni structures

    International Nuclear Information System (INIS)

    Liu Lilin; Huang, Haiyou; Fu Ran; Liu Deming; Zhang Tongyi

    2009-01-01

    The present work conducts crystal characterization by High Resolution Transmission Electron Microscopy (HRTEM) on Cu/Sn-nanolayer/Ni sandwich structures associated with the use of Energy Dispersive X-ray (EDX) analysis. The results show that DO 22 -(Cu,Ni) 3 Sn intermetallic compound (IMC) ordered structure is formed in the sandwich structures at the as-electrodeposited state. The formed DO 22 -(Cu,Ni) 3 Sn IMC is a homogeneous layer with a thickness about 10 nm. The DO 22 -(Cu,Ni) 3 Sn IMC nanolayer is stable during annealing at 250 deg. C for 810 min. The formation and stabilization of the metastable DO 22 -(Cu,Ni) 3 Sn IMC nanolayer are attributed to the less strain energy induced by lattice mismatch between the DO 22 IMC and fcc Cu crystals in comparison with that between the equilibrium DO 3 IMC and fcc Cu crystals.

  3. Electronic states of the θ' phase in Cu-Al alloys as compared to C16-CuAl2: Cu Lα emission excited directly by undulator radiation

    Science.gov (United States)

    Dallera, C.; de Michelis, B.; Puppin, E.; Braicovich, L.; Brookes, N. B.

    1996-01-01

    The electronic states of the θ' phase formed by thermal aging in the Al-Cu (0.5 at. %) alloy are compared with those in C16-CuAl2, which is the final phase separated at equilibrium. This is done by means of Cu Lα fluorescence spectroscopy. The high brilliance of undulator radiation used as an excitation source is exploited. The spectra are taken using the first harmonic of the undulator at 1.7 keV, with a full width half maximum of ~250 eV. A narrowing of around 0.5 eV of the Cu Lα spectra in the θ' phase is found. This is explained in terms of the differences in the Cu 3d-Cu 3d interaction in the two phases and of the hybridization between Cu 3d and the nearly free-electron-like electrons. The results demonstrate the future possibilities of fluorescence spectroscopy of minority species in inhomogeneous systems.

  4. Moisture barrier properties of single-layer graphene deposited on Cu films for Cu metallization

    Science.gov (United States)

    Gomasang, Ploybussara; Abe, Takumi; Kawahara, Kenji; Wasai, Yoko; Nabatova-Gabain, Nataliya; Thanh Cuong, Nguyen; Ago, Hiroki; Okada, Susumu; Ueno, Kazuyoshi

    2018-04-01

    The moisture barrier properties of large-grain single-layer graphene (SLG) deposited on a Cu(111)/sapphire substrate are demonstrated by comparing with the bare Cu(111) surface under an accelerated degradation test (ADT) at 85 °C and 85% relative humidity (RH) for various durations. The change in surface color and the formation of Cu oxide are investigated by optical microscopy (OM) and X-ray photoelectron spectroscopy (XPS), respectively. First-principle simulation is performed to understand the mechanisms underlying the barrier properties of SLG against O diffusion. The correlation between Cu oxide thickness and SLG quality are also analyzed by spectroscopic ellipsometry (SE) measured on a non-uniform SLG film. SLG with large grains shows high performance in preventing the Cu oxidation due to moisture during ADT.

  5. Development of bonding techniques between tungsten and copper alloy for plasma facing components by HIP method (2). Bonding between tungsten and DS-copper

    International Nuclear Information System (INIS)

    Saito, Shigeru; Fukaya, Kiyoshi; Eto, Motokuni; Ishiyama, Shintaro; Akiba, Masato

    2000-02-01

    Recently, W (tungsten)-alloys are considered as plasma facing material (PFM) for ITER because of these many favorable properties such as high melting point (3655 K), relatively high thermal conductivity and higher resistivity for plasma sputtering. On the other hand, Cu-alloys, especially DS (dispersion strengthened)-Cu, are proposed as heat sink materials because of its high thermal conductivity and good mechanical properties at high temperature. Plasma facing components (PFC) are designed as the duplex structure where W armor tiles are bonded with Cu-alloy heat sink. Then, we started the bonding technology development by hot isostatic press (HIP) method to bond W with Cu-alloys because of its many advantages. Until now, it was reported that we could get the best HIP bonding conditions for W and OFHC-Cu and the tensile strength was similar with HIP treated OFHC-Cu. In this experiments, bonding tests of W and DS-Cu with insert material were performed. As insert material, OFHC-Cu was used with different thickness. Bonding conditions were selected as 1273 K x 2 hours x 147 MPa. Bonding tests with 0.3 to 1.8 mm thickness OFHC-Cu were successfully bonded but with 0.1 mm thickness was not bonded. From the results of tensile tests, the tensile strength of the specimens with 0.3 and 0.5 mm thickness were decreased at elevated temperature. It was shown that over 1.0 mm thickness OFHC-Cu insert may be needed and the tensile strength were a little higher than that of HIP treated OFHC-Cu. (author)

  6. Preparation of Uniform Hexapod Cu{sub 2}O and Hollow Hexapod CuO

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Youngsik; Huh, Youngduk [Dankook Univ., Yongin (Korea, Republic of)

    2013-10-15

    The filled hexapod Cu{sub 2}O precursors were also prepared under microwave irradiation for only 120 s using a commercial microwave oven. The optimal experimental conditions for the perfect and uniform hexapod-like Cu{sub 2}O precursors were examined. The control of the cooling rate by adding cold water was also examined for the elimination of further crystal growth at the end of the arm of the hexapod Cu{sub 2}O precursors due to the thermal diffusion in reaction medium. The uniform hollow structure and hexapod CuO products were also prepared from the direct thermal oxidation of the filled hexapod Cu{sub 2}O precursors. The morphology-dependent properties of inorganic materials, such as magnetic, photocatalytic, and antibacterial activities, is one of the most important experimental issues in inorganic technology. Many researchers have prepared uniform and specific shaped inorganic oxides to understand the morphology-dependent properties of inorganic oxides.

  7. Modeling Photoelectron Spectra of CuO, Cu2O, and CuO2 Anions with Equation-of-Motion Coupled-Cluster Methods: An Adventure in Fock Space.

    Science.gov (United States)

    Orms, Natalie; Krylov, Anna I

    2018-04-12

    The experimental photoelectron spectra of di- and triatomic copper oxide anions have been reported previously. We present an analysis of the experimental spectra of the CuO - , Cu 2 O - , and CuO 2 - anions using equation-of-motion coupled-cluster (EOM-CC) methods. The open-shell electronic structure of each molecule demands a unique combination of EOM-CC methods to achieve an accurate and balanced representation of the multiconfigurational anionic- and neutral-state manifolds. Analysis of the Dyson orbitals associated with photodetachment from CuO - reveals the strong non-Koopmans character of the CuO states. For the lowest detachment energy, a good agreement between theoretical and experimental values is obtained with CCSD(T) (coupled-cluster with single and double excitations and perturbative account of triple excitations). The (T) correction is particularly important for Cu 2 O - . Use of a relativistic pseudopotential and matching basis set improves the quality of results in most cases. EOM-DIP-CCSD analysis of the low-lying states of CuO 2 - reveals multiple singlet and triplet anionic states near the triplet ground state, adding an extra layer of complexity to the interpretation of the experimental CuO 2 - photoelectron spectrum.

  8. Influence of body size on Cu bioaccumulation in zebra mussels Dreissena polymorpha exposed to different sources of particle-associated Cu

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Huan, E-mail: huanzhong1982@hotmail.com [Environmental and Resource Studies Program, Trent University, Peterborough, Ontario (Canada); Nanjing University, School of Environment, State Key Laboratory of Pollution Control and Resource Reuse, Nanjing, Jiangsu Province (China); Kraemer, Lisa; Evans, Douglas [Environmental and Resource Studies Program, Trent University, Peterborough, Ontario (Canada)

    2013-10-15

    Highlights: • Mussels exposed to algal/sediment-Cu have different size-related Cu accumulation. • Size-related Cu accumulation in mussels could be more dependant on algal-Cu uptake. • Importance of algal/sediment-Cu to Cu bioaccumulation varies with mussel body size. • Cu sources (algae and sediments) should be considered in “mussel watch” programs. • Cu stable isotope offers many advantages in Cu bioaccumulation studies. -- Abstract: Size of organisms is critical in controlling metal bioavailability and bioaccumulation, while mechanisms of size-related metal bioaccumulation are not fully understood. To investigate the influences of different sources of particle-associated Cu on body size-related Cu bioavailability and bioaccumulation, zebra mussels (Dreissena polymorpha) of different sizes were exposed to stable Cu isotope ({sup 65}Cu) spiked algae (Chlorella vulgaris) or sediments in the laboratory and the Cu tissue concentration-size relationships were compared with that in unexposed mussels. Copper tissue concentrations decreased with mussel size (tissue or shell dry weight) in both unexposed and algal-exposed mussels with similar decreasing patterns, but were independent of size in sediment-exposed mussels. Furthermore, the relative contribution of Cu uptake from algae (65–91%) to Cu bioaccumulation is always higher than that from sediments (9–35%), possibly due to the higher bioavailability of algal-Cu. Therefore, the size-related ingestion of algae could be more important in influencing the size-related variations in Cu bioaccumulation. However, the relative contribution of sediment-Cu to Cu bioaccumulation increased with body size and thus sediment ingestion may also affect the size-related Cu variations in larger mussels (tissue weight >7.5 mg). This study highlights the importance of considering exposure pathways in normalization of metal concentration variation when using bivalves as biomonitors.

  9. Bonding of Si wafers by surface activation method for the development of high efficiency high counting rate radiation detectors

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Yamashita, Makoto; Onabe, Hideaki

    2006-01-01

    Si wafers with two different resistivities ranging over two orders of magnitude were bonded by the surface activation method. The resistivities of bonded Si wafers were measured as a function of annealing temperature. Using calculations based on a model, the interface resistivities of bonded Si wafers were estimated as a function of the measured resistivities of bonded Si wafers. With thermal treatment from 500degC to 900degC, all interfaces showed high resistivity, with behavior that was close to that of an insulator. Annealing at 1000degC decreased the interface resistivity and showed close to ideal bonding after thermal treatment at 1100degC. (author)

  10. Damage behavior of SnAgCu/Cu solder joints subjected to thermomechanical cycling

    International Nuclear Information System (INIS)

    Xiao, H.; Li, X.Y.; Hu, Y.; Guo, F.; Shi, Y.W.

    2013-01-01

    Highlights: •A creep–fatigue damage model based on CDM was proposed. •Designed system includes load frame, strain measure device and damage test device. •Damage evolution of solder joints was a function of accumulated inelastic strain. •Damage of solder joints is an interaction between creep and low-cycle fatigue. -- Abstract: Thermomechanical fatigue damage is a progressive process of material degradation. The objective of this study was to investigate the damage behavior of SnAgCu/Cu solder joints under thermomechanical cycling. A damage model was proposed based on continuum damage mechanics (CDM). Based upon an analysis of displacements for flip-chip solder joints subjected to thermal cycling, a special bimetallic loading frame with single-solder joint samples was designed to simulate the service conditions of actual joints in electronic packages. The assembly, which allowed for strain measurements of an individual solder joint during temperature cycling, was used to investigate the impact of stress–strain cycling on the damage behavior of SnAgCu/Cu solder joints. The characteristic parameters of the damage model were determined through thermomechanical cycling and strain measurement tests. The damage variable D = 1 − R 0 /R was selected, and values for it were obtained using a four-probe method for the single-solder joint samples every dozen cycles during thermomechanical cycling tests to verify the model. The results showed that the predicted damage was in good agreement with the experimental results. The damage evolution law proposed here is a function of inelastic strain, and the results showed that the damage rate of SnAgCu/Cu solder joints increased as the range of the applied strain increased. In addition, the microstructure evolution of the solder joints was analyzed using scanning electron microscopy, which provided the microscopic explanation for the damage evolution law of SnAgCu/Cu solder joints

  11. Damage behavior of SnAgCu/Cu solder joints subjected to thermomechanical cycling

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, H., E-mail: xiaohui2013@yahoo.com.cn; Li, X.Y.; Hu, Y.; Guo, F.; Shi, Y.W.

    2013-11-25

    Highlights: •A creep–fatigue damage model based on CDM was proposed. •Designed system includes load frame, strain measure device and damage test device. •Damage evolution of solder joints was a function of accumulated inelastic strain. •Damage of solder joints is an interaction between creep and low-cycle fatigue. -- Abstract: Thermomechanical fatigue damage is a progressive process of material degradation. The objective of this study was to investigate the damage behavior of SnAgCu/Cu solder joints under thermomechanical cycling. A damage model was proposed based on continuum damage mechanics (CDM). Based upon an analysis of displacements for flip-chip solder joints subjected to thermal cycling, a special bimetallic loading frame with single-solder joint samples was designed to simulate the service conditions of actual joints in electronic packages. The assembly, which allowed for strain measurements of an individual solder joint during temperature cycling, was used to investigate the impact of stress–strain cycling on the damage behavior of SnAgCu/Cu solder joints. The characteristic parameters of the damage model were determined through thermomechanical cycling and strain measurement tests. The damage variable D = 1 − R{sub 0}/R was selected, and values for it were obtained using a four-probe method for the single-solder joint samples every dozen cycles during thermomechanical cycling tests to verify the model. The results showed that the predicted damage was in good agreement with the experimental results. The damage evolution law proposed here is a function of inelastic strain, and the results showed that the damage rate of SnAgCu/Cu solder joints increased as the range of the applied strain increased. In addition, the microstructure evolution of the solder joints was analyzed using scanning electron microscopy, which provided the microscopic explanation for the damage evolution law of SnAgCu/Cu solder joints.

  12. Formation of III–V-on-insulator structures on Si by direct wafer bonding

    International Nuclear Information System (INIS)

    Yokoyama, Masafumi; Iida, Ryo; Ikku, Yuki; Kim, Sanghyeon; Takenaka, Mitsuru; Takagi, Shinichi; Takagi, Hideki; Yasuda, Tetsuji; Yamada, Hisashi; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko

    2013-01-01

    We have studied the formation of III–V-compound-semiconductors-on-insulator (III–V-OI) structures with thin buried oxide (BOX) layers on Si wafers by using developed direct wafer bonding (DWB). In order to realize III–V-OI MOSFETs with ultrathin body and extremely thin body (ETB) InGaAs-OI channel layers and ultrathin BOX layers, we have developed an electron-cyclotron resonance (ECR) O 2 plasma-assisted DWB process with ECR sputtered SiO 2 BOX layers and a DWB process based on atomic-layer-deposition Al 2 O 3 (ALD-Al 2 O 3 ) BOX layers. It is essential to suppress micro-void generation during wafer bonding process to achieve excellent wafer bonding. We have found that major causes of micro-void generation in DWB processes with ECR-SiO 2 and ALD-Al 2 O 3 BOX layers are desorption of Ar and H 2 O gas, respectively. In order to suppress micro-void generation in the ECR-SiO 2 BOX layers, it is effective to introduce the outgas process before bonding wafers. On the other hand, it is a possible solution for suppressing micro-void generation in the ALD-Al 2 O 3 BOX layers to increase the deposition temperature of the ALD-Al 2 O 3 BOX layers. It is also another possible solution to deposit ALD-Al 2 O 3 BOX layers on thermally oxidized SiO 2 layers, which can absorb the desorption gas from ALD-Al 2 O 3 BOX layers. (invited paper)

  13. Changes in the geometries of C₂H₂ and C₂H₄ on coordination to CuCl revealed by broadband rotational spectroscopy and ab-initio calculations.

    Science.gov (United States)

    Stephens, Susanna L; Bittner, Dror M; Mikhailov, Victor A; Mizukami, Wataru; Tew, David P; Walker, Nicholas R; Legon, Anthony C

    2014-10-06

    The molecular geometries of isolated complexes in which a single molecule of C2H4 or C2H2 is bound to CuCl have been determined through pure rotational spectroscopy and ab-initio calculations. The C2H2···CuCl and C2H4···CuCl complexes are generated through laser vaporization of a copper rod in the presence of a gas sample undergoing supersonic expansion and containing C2H2 (or C2H4), CCl4, and Ar. Results are presented for five isotopologues of C2H2···CuCl and six isotopologues of C2H4···CuCl. Both of these complexes adopt C(2v), T-shaped geometries in which the hydrocarbon binds to the copper atom through its π electrons such that the metal is equidistant from all H atoms. The linear and planar geometries of free C2H2 and C2H4, respectively, are observed to distort significantly on attachment to the CuCl unit, and the various changes are quantified. The ∠(*-C-H) parameter in C2H2 (where * indicates the midpoint of the C≡C bond) is measured to be 192.4(7)° in the r0 geometry of the complex representing a significant change from the linear geometry of the free molecule. This distortion of the linear geometry of C2H2 involves the hydrogen atoms moving away from the copper atom within the complex. Ab-initio calculations at the CCSD(T)(F12*)/AVTZ level predict a dihedral ∠(HCCCu) angle of 96.05° in C2H4···CuCl, and the experimental results are consistent with such a distortion from planarity. The bonds connecting the carbon atoms within each of C2H2 and C2H4, respectively, extend by 0.027 and 0.029 Å relative to the bond lengths in the isolated molecules. Force constants, k(σ), and nuclear quadrupole coupling constants, χ(aa)(Cu), [χ(bb)(Cu) - χ(cc)(Cu)], χ(aa)(Cl), and [χ(bb)(Cl) - χ(cc)(Cl)], are independently determined for all isotopologues of C2H2···CuCl studied and for four isotopologues of C2H4···CuCl.

  14. A density functional study on properties of a Cu{sub 3}Zn material and CO adsorption onto its surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Qian-Lin, E-mail: qltang@xidian.edu.cn [Department of Applied Chemistry, School of Advanced Materials and Nanotechnology, Xidian University, No. 2 South Taibai Road, Xi’an, Shaanxi 710071 (China); Duan, Xiao-Xuan; Liu, Bei; Wei, An-Qing; Liu, Sheng-Long [Department of Applied Chemistry, School of Advanced Materials and Nanotechnology, Xidian University, No. 2 South Taibai Road, Xi’an, Shaanxi 710071 (China); Wang, Qi, E-mail: qwang@mail.xidian.edu.cn [Department of Applied Chemistry, School of Advanced Materials and Nanotechnology, Xidian University, No. 2 South Taibai Road, Xi’an, Shaanxi 710071 (China); Liang, Yan-Ping, E-mail: ypliang@mail.xidian.edu.cn [Department of Applied Chemistry, School of Advanced Materials and Nanotechnology, Xidian University, No. 2 South Taibai Road, Xi’an, Shaanxi 710071 (China); Ma, Xiao-Hua [Department of Applied Chemistry, School of Advanced Materials and Nanotechnology, Xidian University, No. 2 South Taibai Road, Xi’an, Shaanxi 710071 (China); State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, No. 2 South Taibai Road, Xi’an, Shaanxi 710071 (China)

    2016-02-15

    Graphical abstract: Periodic first-principles calculations have been utilized to evaluate the bulk and surface properties of a Cu{sub 3}Zn alloy. - Highlights: • The bulk and surface properties of a DO{sub 23}-Cu{sub 3}Zn alloy were studied with DFT-GGA. • The stability of Cu{sub 3}Zn surfaces correlates with the coordination of surface atoms. • Both the (1 1 4) and (2 1 4) facets are most likely observed in Cu{sub 3}Zn alloy particles. • Covalent bonding influences overwhelmingly the adsorption between CO and Cu{sub 3}Zn. - Abstract: Prior experimental and theoretical efforts have provided strong evidence that the formation of α-brass such as Cu{sub 3}Zn alloys in Cu/ZnO/Al{sub 2}O{sub 3} CO{sub 2}/CO hydrogenation catalysts enhances dramatically the catalytic activity toward methanol synthesis. In this work, a density functional theory (DFT) slab model has been adopted to get information concerning the bulk and surface properties of DO{sub 23}-like Cu{sub 3}Zn and to explore CO molecular adsorption, which will help pave the way to future rationalization of the impact of surface alloying on Cu/ZnO-based catalysis for CO{sub 2} and CO hydrogenations. Our calculations imply that the bulk modulus and cohesive energy of the binary solid solution lie between the corresponding ones for the individual components, but only the former quantity equals its composition weighted average. From the DFT-computed surface energies, the stability of Cu{sub 3}Zn surfaces was predicted to be reinforced in the sequence (1 1 0) < (1 0 1) < (1 1 1) < (1 0 0) = (0 0 1) < (2 1 4) < (1 1 4), which can be interpreted as sensitive to the density change of surface dangling bonds. The downward shifts in the C–O stretch frequency measured experimentally over methanol synthesis catalysts at successively elevated reduction temperatures were correctly reproduced by the present simulation for the adsorption of CO to take place at Cu{sub 3}Zn(1 1 4), Cu{sub 3}Zn(2 1 4) and, as a reference

  15. Tolerance of spermatogonia to oxidative stress is due to high levels of Zn and Cu/Zn superoxide dismutase.

    Directory of Open Access Journals (Sweden)

    Fritzie T Celino

    Full Text Available BACKGROUND: Spermatogonia are highly tolerant to reactive oxygen species (ROS attack while advanced-stage germ cells such as spermatozoa are much more susceptible, but the precise reason for this variation in ROS tolerance remains unknown. METHODOLOGY/PRINCIPAL FINDINGS: Using the Japanese eel testicular culture system that enables a complete spermatogenesis in vitro, we report that advanced-stage germ cells undergo intense apoptosis and exhibit strong signal for 8-hydroxy-2'-deoxyguanosine, an oxidative DNA damage marker, upon exposure to hypoxanthine-generated ROS while spermatogonia remain unaltered. Activity assay of antioxidant enzyme, superoxide dismutase (SOD and Western blot analysis using an anti-Copper/Zinc (Cu/Zn SOD antibody showed a high SOD activity and Cu/Zn SOD protein concentration during early spermatogenesis. Immunohistochemistry showed a strong expression for Cu/Zn SOD in spermatogonia but weak expression in advanced-stage germ cells. Zn deficiency reduced activity of the recombinant eel Cu/Zn SOD protein. Cu/Zn SOD siRNA decreased Cu/Zn SOD expression in spermatogonia and led to increased oxidative damage. CONCLUSIONS/SIGNIFICANCE: These data indicate that the presence of high levels of Cu/Zn SOD and Zn render spermatogonia resistant to ROS, and consequently protected from oxidative stress. These findings provide the biochemical basis for the high tolerance of spermatogonia to oxidative stress.

  16. Study of properties of Cu-Y and Cu-Y-Al system alloys

    International Nuclear Information System (INIS)

    Shparo, N.B.; Nikolaev, A.K.; Rozenberg, V.M.

    1978-01-01

    Investigated were the strength properties of alloys Cu(0-1.2)% Y and Cu-(10-0.5)% Al-(0-0.5)% Y after being treated under various heat conditions and tested at temperatures of 20, 400 and 600 deg C. Yttrium additions raise the temperature of recrystallization of copper and of copper-aluminium alloys. Small additions of yttrium (0.05%) increase considerably strength of Cu-Al alloys without increasing their electric resistance. Optimum properties are attained after hardening, deformation and ageing at 400 deg C

  17. Formation of layered microstructure in the Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O superconductors

    International Nuclear Information System (INIS)

    Jin, S.; Kammlott, G.W.; Tiefel, T.H.; Chen, S.K.

    1992-01-01

    The layered grain microstructure is essential for overcoming the weak link problem and ensuring high transport critical currents in the cuprate superconductors. In this paper we discuss the processing and the mechanisms for layer information in Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O. In melt-processed Y-Ba-Cu-O, sympathetic nucleation on previously nucleated YBa 2 Cu 3 O 7-δ plates during solidification appears to be dominant mechanism for the formation of parallel plate-shaped grains. In the Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O ribbons, the interface reaction between the superconductor layer and the silvers substrate seems to be the main mechanism for the c-axis texturing of the layered grains. The drastically different critical current behavior in the c-axis textured Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O ribbons is discussed in terms of possible differences in the nature of the twist and tilt grain boundaries. (orig.)

  18. Experimental Liquidus Studies of the Pb-Cu-Si-O System in Equilibrium with Metallic Pb-Cu Alloys

    Science.gov (United States)

    Shevchenko, M.; Nicol, S.; Hayes, P. C.; Jak, E.

    2018-03-01

    Phase equilibria of the Pb-Cu-Si-O system have been investigated in the temperature range from 1073 K to 1673 K (800 °C to 1400 °C) for oxide liquid (slag) in equilibrium with solid Cu metal and/or liquid Pb-Cu alloy, and solid oxide phases: (a) quartz or tridymite (SiO2) and (b) cuprite (Cu2O). High-temperature equilibration on silica or copper substrates was performed, followed by quenching, and direct measurement of Pb, Cu, and Si concentrations in the liquid and solid phases using the electron probe X-ray microanalysis has been employed to accurately characterize the system in equilibrium with Cu or Pb-Cu metal. All results are projected onto the PbO-"CuO0.5"-SiO2 plane for presentation purposes. The present study is the first-ever systematic investigation of this system to describe the slag liquidus temperatures in the silica and cuprite primary phase fields.

  19. Magnetic Moment of $^{59}$Cu

    CERN Multimedia

    2002-01-01

    Experiment IS358 uses the intense and pure beams of copper isotopes provided by the ISOLDE RILIS (resonance ionization laser ion source). The isotopes are implanted and oriented in the low temperature nuclear orientation set-up NICOLE. Magnetic moments are measured by $\\beta$-NMR. Copper (Z=29), with a single proton above the proton-magic nickel isotopes provides an ideal testground for precise shell model calculations of magnetic moments and their experimental verification. In the course of our experiments we already determined the magnetic moments of $^{67}$Ni, $^{67}$Cu, $^{68g}$Cu, $^{69}$Cu and $^{71}$Cu which provide important information on the magicity of the N=40 subshell closure. In 2001 we plan to conclude our systematic investigations by measuring the magnetic moment of the neutron-deficient isotope $^{59}$Cu. This will pave the way for a subsequent study of the magnetic moment of $^{57}$Cu with a complementary method.

  20. Optical constants of Cu(In, Ga)Se{sub 2} for arbitrary Cu and Ga compositions

    Energy Technology Data Exchange (ETDEWEB)

    Minoura, Shota; Kodera, Keita; Nakane, Akihiro; Fujiwara, Hiroyuki, E-mail: fujiwara@gifu-u.ac.jp [Center of Innovative Photovoltaic Systems (CIPS), Gifu University, 1-1 Yanagido, Gifu 501-1193 (Japan); Maekawa, Takuji [Research and Development Headquarters, ROHM Co., Ltd., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585 (Japan); Niki, Shigeru [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology (AIST), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

    2015-05-21

    The optical constants of Cu(In, Ga)Se{sub 2} (CIGS)-based polycrystalline layers with different Cu and Ga compositions are parameterized completely up to a photon energy of 6.5 eV assuming several Tauc-Lorentz transition peaks. Based on the modeled optical constants, we establish the calculation procedure for the CIGS optical constants in a two-dimensional compositional space of (Cu, Ga) by taking the composition-induced shift of the critical point energies into account. In particular, we find that the variation of the CIGS optical constants with the Cu composition can be modeled quite simply by a spectral-averaging method in which the dielectric function of the target Cu composition is estimated as a weighted average of the dielectric functions with higher and lower Cu compositions. To express the effect of the Ga composition, on the other hand, an energy shift model reported earlier is adopted. Our model is appropriate for a wide variety of CIGS-based materials having different Cu and Ga compositions, although the modeling error increases slightly at lower Cu compositions [Cu/(In + Ga) < 0.69]. From our model, the dielectric function, refractive index, extinction coefficient, and absorption coefficient for the arbitrary CIGS composition can readily be obtained. The optical database developed in this study is applied further for spectroscopic ellipsometry analyses of CIGS layers fabricated by single and multi-stage coevaporation processes. We demonstrate that the compositional and structural characterizations of the CIGS-based layers can be performed from established analysis methods.

  1. Influence of Cu Content on the Structure, Mechanical, Friction and Wear Properties of VCN–Cu Films

    Directory of Open Access Journals (Sweden)

    Fanjing Wu

    2018-03-01

    Full Text Available VCN–Cu films with different Cu contents were deposited by reactive magnetron sputtering technique. The films were evaluated in terms of their microstructure, elemental composition, mechanical, and tribological properties by X-ray diffraction (XRD, energy-dispersive X-ray spectroscopy (EDS, high resolution transmission electron microscopy (HR-TEM, Raman spectrometry, nano-indentation, field emission scanning electron microscope (FE-SEM, Bruker three-dimensional (3D profiler, and high-temperature ball on disc tribo-meter. The results showed that face-centered cubic (fcc VCN, hexagonal close-packed (hcp V2CN, fcc-Cu, amorphous graphite and CNx phases co-existed in VCN–Cu films. After doping with 0.6 at.% Cu, the hardness reached a maximum value of ~32 GPa. At room temperature (RT, the friction coefficient and wear rate increased with increasing Cu content. In the temperature range of 100–500 °C, the friction coefficient decreased, but the wear rate increased with the increase of Cu content.

  2. First-principles study of point defects in solar cell semiconductor CuI

    International Nuclear Information System (INIS)

    Chen, Hui; Wang, Chong-Yu; Wang, Jian-Tao; Wu, Ying; Zhou, Shao-Xiong

    2013-01-01

    Hybrid density functional theory is used to study the formation energies and transition levels of point defects V Cu , V I , I Cu , Cu I , and O I in CuI. It is shown that the Heyd–Scuseria–Ernzerhof (HSE06) method can accurately describe the band gap of bulk CuI. As a solar cell material, we find that p-type semiconductor CuI can be obtained under the iodine-rich and copper-poor conditions. Our results are in good agreement with experiment and provide an excellent account for tuning the structural and electronic properties of CuI

  3. Decomposition of NO on Cu-loaded zeolites

    Energy Technology Data Exchange (ETDEWEB)

    Sepulveda-Escribano, A; Marquez-Alvarez, C; Rodriquez-Ramos, I; Fierro, J L.G. [Instituto de Catalisis y Petroleoquimica, Madrid (Spain); Guerrero-Ruiz, A [Departamento de Quimica Inorganica, UNED, Madrid (Spain)

    1993-05-26

    Two copper ion-exchanged zeolites, Cu/NaY and Cu/NaZSM-5 have been studied by several techniques (TPR, TPD of NO, IR spectroscopy of adsorbed NO and XPS) and their catalytic activity for NO-decomposition have been determined under dynamic conditions. The results obtained here show that copper is stabilized as Cu[sup +] in Cu/NaZSM-5 after calcination in air at 673K, while in Cu/NaY the initial Cu[sup +]-ions are easier oxidized to Cu[sup 2+], this leading to a completely different catalytic behavior in the reaction of NO-decomposition. So, whereas the Cu/NaZSM-5 exhibits a high NO-conversion at the reaction temperatures (573 and 873K), the parent Cu/NaY zeolite becomes deactivated in the first stages of reaction.

  4. Synthesis, characterization and catalytic property of CuO and Ag/CuO nanoparticles for the epoxidation of styrene

    Energy Technology Data Exchange (ETDEWEB)

    Lashanizadegan, Maryam; Erfaninia, Nasrin [Alzahra University, Tehran (Iran, Islamic Republic of)

    2013-11-15

    CuO nanorodes, CuO nanoplates and Ag/CuO nanoparticles were synthesized in the presence of polyethylene glycol by depositional in alkaline environment. Oxide nanoparticles were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and Fourier transform infrared absorption spectra (FT-IR). CuO and Ag/CuO nanoparticles show high catalytic activity for the selective epoxidation of styrene to styrene oxide by TBHP. Under the optimized reaction condition, the oxidation of styrene catalyzed by CuO nanorods gave 100% conversion with 60 and 35% styrene oxide and benzaldehyde, respectively. Ag/CuO gave 99% conversion and styrene oxide (71%) and benzaldehyde (12%) being the major product.

  5. Antimicrobial Cu-bearing stainless steel scaffolds

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qiang, E-mail: mfqwang@163.com [School of Stomatology, China Medical University, Shenyang 110002 (China); Ren, Ling [Institute of Metal Research, Chinese Academy of Sciences (China); Li, Xiaopeng [School of Mechanical and Chemical Engineering, The University of Western Australia (Australia); Zhang, Shuyuan [Institute of Metal Research, Chinese Academy of Sciences (China); Sercombe, Timothy B., E-mail: tim.sercombe@uwa.edu.au [School of Mechanical and Chemical Engineering, The University of Western Australia (Australia); Yang, Ke, E-mail: kyang@imr.ac.cn [Institute of Metal Research, Chinese Academy of Sciences (China)

    2016-11-01

    Copper-bearing stainless steel scaffolds with two different structures (Body Centered Cubic and Gyroid labyrinth) at two solid fractions (25% and 40%) were fabricated from both 316L powder and a mixture of 316L and elemental Cu powder using selective laser melting, and relative 316L scaffolds were served as control group. After processing, the antimicrobial testing demonstrated that the 316L-Cu scaffolds presented excellent antimicrobial activity against Escherichia coli and Staphylococcus aureus, and the cell viability assay indicated that there was no cytotoxic effect of 316L-Cu scaffolds on rat marrow mesenchymal stem cells. As such, these have the potential to reduce implant-associated infections. The Cu was also found to homogeneously distribute within the microstructure by scanning electronic microcopy. The addition of Cu would not significantly affect its strength and stiffness compared to 316L scaffold, and the stiffness of all the scaffolds (3-20GPa) is similar to that of bone and much less than that of bulk stainless steel. Consequently, fabrication of such low stiffness porous structures, especially coupled with the addition of antimicrobial Cu, may provide a new direction for medical stainless steels. - Highlights: • 316L-Cu scaffolds were fabricated by using selective laser melting (SLM). • 316L-Cu scaffolds showed satisfied antimicrobial activities. • 316L-Cu scaffolds have no cytotoxic effect on normal cells. • Other properties of 316L-Cu scaffolds were similar to 316L scaffolds. • 316L-Cu scaffolds have the potential to be used in orthopedic applications.

  6. Antimicrobial Cu-bearing stainless steel scaffolds

    International Nuclear Information System (INIS)

    Wang, Qiang; Ren, Ling; Li, Xiaopeng; Zhang, Shuyuan; Sercombe, Timothy B.; Yang, Ke

    2016-01-01

    Copper-bearing stainless steel scaffolds with two different structures (Body Centered Cubic and Gyroid labyrinth) at two solid fractions (25% and 40%) were fabricated from both 316L powder and a mixture of 316L and elemental Cu powder using selective laser melting, and relative 316L scaffolds were served as control group. After processing, the antimicrobial testing demonstrated that the 316L-Cu scaffolds presented excellent antimicrobial activity against Escherichia coli and Staphylococcus aureus, and the cell viability assay indicated that there was no cytotoxic effect of 316L-Cu scaffolds on rat marrow mesenchymal stem cells. As such, these have the potential to reduce implant-associated infections. The Cu was also found to homogeneously distribute within the microstructure by scanning electronic microcopy. The addition of Cu would not significantly affect its strength and stiffness compared to 316L scaffold, and the stiffness of all the scaffolds (3-20GPa) is similar to that of bone and much less than that of bulk stainless steel. Consequently, fabrication of such low stiffness porous structures, especially coupled with the addition of antimicrobial Cu, may provide a new direction for medical stainless steels. - Highlights: • 316L-Cu scaffolds were fabricated by using selective laser melting (SLM). • 316L-Cu scaffolds showed satisfied antimicrobial activities. • 316L-Cu scaffolds have no cytotoxic effect on normal cells. • Other properties of 316L-Cu scaffolds were similar to 316L scaffolds. • 316L-Cu scaffolds have the potential to be used in orthopedic applications.

  7. Conducting mechanisms of forming-free TiW/Cu{sub 2}O/Cu memristive devices

    Energy Technology Data Exchange (ETDEWEB)

    Yan, P.; Li, Y.; Hui, Y. J.; Zhong, S. J.; Zhou, Y. X.; Xu, L.; Liu, N.; Qian, H.; Sun, H. J., E-mail: shj@mail.hust.edu.cn; Miao, X. S. [Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-08-24

    P-type Cu{sub 2}O is a promising CMOS-compatible candidate to fabricate memristive devices for next-generation memory, logic and neuromorphic computing. In this letter, the microscopic switching and conducting mechanisms in TiW/Cu{sub 2}O/Cu memristive devices have been thoroughly investigated. The bipolar resistive switching behaviors without an electro-forming process are ascribed to the formation and rupture of the conducting filaments composed of copper vacancies. In the low resistive state, the transport of electrons in the filaments follows Mott's variable range hopping theory. When the devices switch back to high resistive state, the coexistence of Schottky emission at the Cu/Cu{sub 2}O interface and electron hopping between the residual filaments is found to dominate the conducting process. Our results will contribute to the further understanding and optimization of p-type memristive materials.

  8. Structural and electronic properties of the adsorbed and defected Cu nanowires: A density-functional theory study

    Energy Technology Data Exchange (ETDEWEB)

    Duan, Ying-Ni [College of Physics and Information Technology, Shaanxi Normal University, Xian 710062, Shaanxi (China); Department of Medical Engineering and Technology, Xinjiang Medical University, Urumqi 830011, Xinjiang (China); Zhang, Jian-Min, E-mail: jianm_zhang@yahoo.com [College of Physics and Information Technology, Shaanxi Normal University, Xian 710062, Shaanxi (China); Fan, Xiao-Xi [Department of Medical Engineering and Technology, Xinjiang Medical University, Urumqi 830011, Xinjiang (China); Xu, Ke-Wei [College of Physics and Mechanical and Electronic Engineering, Xian University of Arts and Science, Xian 710065, Shaanxi (China)

    2014-12-01

    Using first-principles calculations based on density-functional theory, we systematically investigate the influence of adsorbates (CO molecule and O atom) and defects (adsorb one extra Cu atom and monovacancy) on the structural and electronic properties of Cu{sub 5-1}NW and Cu{sub 6-1}NW. For both nanowires, CO molecule prefers to adsorb on the top site, while O atom prefers to adsorb on the center site. The hybridization between the CO and Cu states is dominated by the donation–backdonation process, which leads to the formation of bonding/antibonding pairs, 5σ{sub b}/5σ{sub a} and 2π{sub b}{sup ⁎}/2π{sub a}{sup ⁎}. The larger adsorption energies, larger charge transfers to O adatom and larger decrease in quantum conductance 3G{sub 0} for an O atom adsorbed on the Cu{sub 5-1}NW and Cu{sub 6-1}NW show both Cu{sub 5-1}NW and Cu{sub 6-1}NW can be used as an O sensor. Furthermore, the decrease in quantum conductance 1G{sub 0} for a CO molecule adsorbed on the Cu{sub 6-1}NW also shows the Cu{sub 6-1}NW can be used to detect CO molecule. So we expect these results may have implications for CuNW based chemical sensing. High adsorption energy of one extra Cu atom and relatively low formation energy of a monovacancy suggest that these two types of defects are likely to occur in the fabrication of CuNWs. One extra Cu atom does not decrease the quantum conductance, while a Cu monovacancy leads to a drop of the quantum conductance.

  9. Wrinkle-Free Single-Crystal Graphene Wafer Grown on Strain-Engineered Substrates.

    Science.gov (United States)

    Deng, Bing; Pang, Zhenqian; Chen, Shulin; Li, Xin; Meng, Caixia; Li, Jiayu; Liu, Mengxi; Wu, Juanxia; Qi, Yue; Dang, Wenhui; Yang, Hao; Zhang, Yanfeng; Zhang, Jin; Kang, Ning; Xu, Hongqi; Fu, Qiang; Qiu, Xiaohui; Gao, Peng; Wei, Yujie; Liu, Zhongfan; Peng, Hailin

    2017-12-26

    Wrinkles are ubiquitous for graphene films grown on various substrates by chemical vapor deposition at high temperature due to the strain induced by thermal mismatch between the graphene and substrates, which greatly degrades the extraordinary properties of graphene. Here we show that the wrinkle formation of graphene grown on Cu substrates is strongly dependent on the crystallographic orientations. Wrinkle-free single-crystal graphene was grown on a wafer-scale twin-boundary-free single-crystal Cu(111) thin film fabricated on sapphire substrate through strain engineering. The wrinkle-free feature of graphene originated from the relatively small thermal expansion of the Cu(111) thin film substrate and the relatively strong interfacial coupling between Cu(111) and graphene, based on the strain analyses as well as molecular dynamics simulations. Moreover, we demonstrated the transfer of an ultraflat graphene film onto target substrates from the reusable single-crystal Cu(111)/sapphire growth substrate. The wrinkle-free graphene shows enhanced electrical mobility compared to graphene with wrinkles.

  10. A-site ordered perovskite CaCu3Cu2Ir2O12−δ with square-planar and octahedral coordinated Cu ions

    International Nuclear Information System (INIS)

    Zhao Qing; Wang Qing-Tao; Yin Yun-Yu; Dai Jian-Hong; Shen Xi; Yang Jun-Ye; Yu Ri-Cheng; Long You-Wen; Hu Zhi-Wei; Li Xiao-Dong

    2016-01-01

    A novel CaCu 3 Cu 2 Ir 2 O 12−δ polycrystalline sample was synthesized at 8 GPa and 1373 K. Rietveld structural analysis shows that this compound crystallizes in an -type A-site ordered perovskite structure with space group Im-3. X-ray absorption spectra reveal a +2-charge state for both the square-planar and octahedral coordinated Cu ions, and the valence state of Ir is found to be about +5. Although the A-site Ca and the A′-site Cu 2+ are 1:3 ordered at fixed atomic positions, the distribution of B-site Cu 2+ and Ir 5+ is disorderly. As a result, no long-range magnetic ordering is observed at temperatures down to 2 K. Electrical transport and heat capacity measurements demonstrate itinerant electronic behavior. The crystal structure is stable with pressure up to 35.7 GPa at room temperature. (paper)

  11. The interaction between dietary Fe, Cu and stress in Cu-67 retention and serum ceruloplasmin (Cp) activity in rats

    International Nuclear Information System (INIS)

    Pellett, L.; Kattelmann, K.; Zinn, K.; Trokey, D.; Forrester, I.; Gordon, D.T.

    1991-01-01

    The objectives of the study were to determine the effects of dietary Fe and stress on Cu-67 retention and serum Cp activity in the rat. A 2 x 2 x 2 factorial arrangement of treatments was utilized. Male Sprague Dawley weanling rats were fed AIN-76 diets ad lib containing 0.8 ppm Cu (CuD) or 5.7 ppm Cu (CuA) with 22.5 ppm Fe (FeA) or 280 ppm Fe (FeE). After 19 days, one-half of the animals of each treatment were stressed by an intramuscular injection of 0.1 ml turpentine/100 gm body weight. Forty-eight hours later, animals were gavaged with Cu-67 and counted over a 7 day period in a whole body high resolution gamma counter. Cu-67 retention was 20% higher in CuD rats compared to CuA rats. There were no significant effects caused by Fe or stress or the interaction between these variables on Cu-67 retention. In rats fed FeE-CuA diets, serum Cp activity was significantly depressed compared to rats fed FeA-CuA diets. These reductions in the acute phase protein Cp, were 85% and 70% in nonstressed and stressed rats, respectively. The results of this study suggest that the negative interaction effects of excess Fe on Cu utilization does not occur at the site of Cu absorption, but within the body and specifically in the liver

  12. Exploring Cu2O/Cu cermet as a partially inert anode to produce aluminum in a sustainable way

    International Nuclear Information System (INIS)

    Feng, Li-Chao; Xie, Ning; Shao, Wen-Zhu; Zhen, Liang; Ivanov, V.V.

    2014-01-01

    Highlights: • Cu 2 O/Cu cermet was used as a candidate partially inert anode material to produce aluminum alloys. • The thermal corrosion behavior of Cu 2 O/Cu was investigated in molten salt at 960 °C. • The corrosion rate is largely governed by the geometrical structures of Cu in the prepared samples. • The corrosion rate increases with decreasing sizes and increasing filling contents of Cu phase. • The corrosion rate was 1.8–9 cm/y and the Cu contents is less than 6.2 wt.% in the produced aluminum. - Abstract: As an energy-intensive process, aluminum production by the Hall–Héroult method accounts for significant emissions of CO 2 and some toxic greenhouse gases. The utilization of an inert anode in place of a carbon anode was considered as a revolutionary technique to solve most of the current environmental problems resulting from the Hall–Héroult process. However, the critical property requirements of the inert anode materials significantly limit the application of this technology. In light of the higher demand for aluminum alloys than for pure aluminum, a partially inert anode was designed to produce aluminum alloys in a more sustainable way. Here, Cu 2 O/Cu cermet was chosen as the material of interest. The thermal corrosion behavior of Cu 2 O/Cu was investigated in Na 3 AlF 6 –CaF 2 –Al 2 O 3 electrolyte at 960 °C to elucidate the corrosion mechanisms of this type of partially inert anode for the production of aluminum or aluminum alloys. Furthermore, the effects of the geometrical structure of the Cu phase on the thermal corrosion behavior of Cu 2 O/Cu cermet in the electrolyte were investigated as well. The thermal corrosion rate was evaluated by the weight loss method and the results show that the samples prepared with branch-like Cu have higher thermal corrosion rate than those prepared with spherical Cu, and the corrosion rate increases with decreasing size and increasing filling content of Cu phase. The calculated corrosion rate

  13. Efficient removal of methyl orange using Cu2O as a dual function catalyst

    Science.gov (United States)

    Zhang, Fan; Dong, Guohui; Wang, Mian; Zeng, Yubin; Wang, Chuanyi

    2018-06-01

    In this study, we synthesized Cu2O particles with rough surfaces by a facile solvothermal method as a dual-function material that can degrade contaminants not only under light irradiation but also in dark circumstance. Both the as-prepared Cu2O and commercial Cu2O exhibited excellent performance for the removal of methyl orange under visible light irradiation through a photocatalysis-based strategy. However, the former was found to show remarkable capability under dark circumstances by means of molecular oxygen activation, while the latter performed poor efficiently under the same condition. This significant difference of performances under dark circumstances was related to rich oxygen vacancies existed on the as-prepared Cu2O surfaces that are associated with the single-electron reduction of O2 to generate radO2-, which play a dominant role in the generation of Cu+. In addition, Cu+ was identified to play key roles in the broken of azo bond. Then, the generated intermediates were mineralized by radOH generated through molecular oxygen activation process. This study could not only deep the understanding of the MO removal mechanism by Cu2O but also show a novel direction of amphibious application for photocatalytic materials.

  14. Observation of weakly adsorbed oxygen on Y5Ba6Cu11Oy

    International Nuclear Information System (INIS)

    Kao, Sendjaja; Ng, K.Y.S.

    1992-01-01

    In the Y-Ba-Cu-O compound, several investigators have observed superconductivity-like phenomena at higher temperatures, some even reaching zero resistance at 250 K. Huang et al. reported an observation of sharp resistivity drops, at least four orders of magnitude at ca. 230 K, in one annealed sample of Eu 1 Ba 2 Cu 3 O 6+x . But the resistance drop disappeared after thermal cycling, although the correlated magnetic anomalies observed in their magnetic measurements persisted for many thermal cycles. Recently, Chen et al reported that the superconductivity-like transition at a temperature above 200 K in their mixed-phase YBaCuO persisted for 29 thermal cycles. The samples were treated by a low-temperature (50-70C) oxygenation process and enclosed in oxygen environment during electrical and magnetic measurements. They also found that this higher-temperature transition could not survive thermal cycling when the sample was in helium atmosphere. The role oxygen plays in their observations is not clear, but they speculated that weakly bonded oxygen atom/atoms are responsible for the high-temperature phase. This observation of T c > 200 K in oxygen environment is recently confirmed by Schonberger et al. in highly oriented multiphase Y-Ba-Cu-O thin film. Here, the authors observed, for the first time, adsorption of weakly bonded oxygen at low temperature (≤250C) by a Y 5 Ba 6 Cu 11 O y sample, using thermogravimetric analysis. The resulting oxygen enriched phase in the surface layers may be attributed to the observation of a superconductivity-like transition at above 200 K

  15. Crystal and electronic structure study of AgAu and AgCu bimetallic alloy thin films by X-ray techniques

    Energy Technology Data Exchange (ETDEWEB)

    Ozkendir, O. Murat, E-mail: ozkendir@gmail.com [Mersin University, Faculty of Technology, Energy Systems Engineering, Tarsus (Turkey); Mersin University, Institute of Natural Science, Department of Nanotechnology and Advanced Materials, Mersin (Turkey); Cengiz, E. [Karadeniz Technical University, Faculty of Science, Department of Physics, Trabzon (Turkey); Yalaz, E. [Mersin University, Institute of Natural Science, Department of Nanotechnology and Advanced Materials, Mersin (Turkey); Söğüt, Ö.; Ayas, D.H. [Kahramanmaraş Sütçü İmam Üniversitesi, Faculty of Science and Letters, Department of Physics, Kahramanmaraş (Turkey); Thammajak, B. Nirawat [Synchrotron Light Research Institute (Public Organisation), 111 University Avenue, T. Suranaree, A. Muang, Nakhon Ratchasima 30000 (Thailand)

    2016-05-15

    Highlights: • Crystal and electronic properties of bimetallic AgCu and AgAu alloy thin films were studied. • Both AgCu and AgAu bimetallic samples were determined to have cubic crystal geometry. • Strong influence of Cu and Au atoms on the electronic structure of the Ag atoms were determined. - Abstract: Crystal and electronic structure properties of bimetallic AgAu and AgCu alloy thin films were investigated by X-ray spectroscopic techniques. The aim of this study is to probe the influence of Au or Cu atoms on the electronic behaviors of Ag ions in bimetallic alloy materials that yields different crystal properties. To identify the mechanisms causing crystal phase transitions, study were supported by the collected EXAFS (Extended X-ray Absorption Fine Structure) data. Crystal structures of both Cu and Au doped bimetallic Ag samples were determined mainly in cubic geometry with “Fm3m” space group. Through the Ag–Au and Ag–Cu molecular interactions during bimetallic alloy formations, highly overlapped electronic levels that supports large molecular band formations were observed with different ionization states. Besides, traces of the d–d interactions in Au rich samples were determined as the main interplay in the broad molecular bond formations. The exact atomic locations and types in the samples were determined by EXAFS studies and supported by the performed calculations with FEFF scientific code.

  16. Effects of the molecule-electrode interface on the low-bias conductance of Cu-H2-Cu single-molecule junctions.

    Science.gov (United States)

    Jiang, Zhuoling; Wang, Hao; Shen, Ziyong; Sanvito, Stefano; Hou, Shimin

    2016-07-28

    The atomic structure and electronic transport properties of a single hydrogen molecule connected to both symmetric and asymmetric Cu electrodes are investigated by using the non-equilibrium Green's function formalism combined with the density functional theory. Our calculations show that in symmetric Cu-H2-Cu junctions, the low-bias conductance drops rapidly upon stretching, while asymmetric ones present a low-bias conductance spanning the 0.2-0.3 G0 interval for a wide range of electrode separations. This is in good agreement with experiments on Cu atomic contacts in a hydrogen environment. Furthermore, the distribution of the calculated vibrational energies of the two hydrogen atoms in the asymmetric Cu-H2-Cu junction is also consistent with experiments. These findings provide clear evidence for the formation of asymmetric Cu-H2-Cu molecular junctions in breaking Cu atomic contacts in the presence of hydrogen and are also helpful for the design of molecular devices with Cu electrodes.

  17. Sequential extraction and availability of copper in Cu fungicide-amended vineyard soils from Southern Brazil

    International Nuclear Information System (INIS)

    Correa Nogueirol, Roberta; Ferracciu Alleoni, Luis Reynaldo; Ribeiro Nachtigall, Gilmar; Wellington de Melo, George

    2010-01-01

    The continuous use of cupric fungicides in vineyards, mainly copper sulfate (as a component of the bordeaux mixture), has increased Cu concentration in soils to levels near or even above the maximum established by the Commission of Soil Chemistry and Fertility of the States of Santa Catarina and Rio Grande do Sul, Brazil. Besides the total content, the fractions of the element along the soil profile must be known, because the total content of Cu in the soil is not sufficient to express its environmental impact. The objective of this study was to evaluate the variation of Cu contentes along the soil profile and its speciation and partitioning in 29 soil samples from vineyards in the state of Rio Grande do Sul, Brazil. Samples were collected in areas cropped with vineyards older than 15 years that had been frequently treated with the bordeaux mixture. These samples were from Nitosols, Acrisols, Cambisols and Leptosols and were analysed by sequential extractions and several chemical extractors. Soils had diverse chemical and physical attributes: clay content in the plowed layer (0-0.2 m) ranged from 120 to 610 g kg -1 , pH ranged from 5.3 to 7.3 and organic carbon contents varied from 2.9 to 51 g dm -3 . Among the 29 samples, 16 had the total Cu above the maximum limit allowed by the European Community regulations (140 mg kg -1 ). The average amount of Cu bonded to the oxide fraction accounted for 49.5% of the total Cu.

  18. Sequential extraction and availability of copper in Cu fungicide-amended vineyard soils from Southern Brazil

    Energy Technology Data Exchange (ETDEWEB)

    Correa Nogueirol, Roberta [University of Sao Paulo (ESALQ/USP), C.P. 9, Piracicaba 13418-900, SP (Brazil); Ferracciu Alleoni, Luis Reynaldo, E-mail: alleoni@esalq.usp.br [Department of Soil Science, ESALQ/USP. C.P. 9, Piracicaba 13418-900, SP (Brazil); Ribeiro Nachtigall, Gilmar; Wellington de Melo, George [National Research Center of Grapes and Wine - Embrapa Uva e Vinho, C.P. 130, Bento Goncalves 95700-000, RS (Brazil)

    2010-09-15

    The continuous use of cupric fungicides in vineyards, mainly copper sulfate (as a component of the bordeaux mixture), has increased Cu concentration in soils to levels near or even above the maximum established by the Commission of Soil Chemistry and Fertility of the States of Santa Catarina and Rio Grande do Sul, Brazil. Besides the total content, the fractions of the element along the soil profile must be known, because the total content of Cu in the soil is not sufficient to express its environmental impact. The objective of this study was to evaluate the variation of Cu contentes along the soil profile and its speciation and partitioning in 29 soil samples from vineyards in the state of Rio Grande do Sul, Brazil. Samples were collected in areas cropped with vineyards older than 15 years that had been frequently treated with the bordeaux mixture. These samples were from Nitosols, Acrisols, Cambisols and Leptosols and were analysed by sequential extractions and several chemical extractors. Soils had diverse chemical and physical attributes: clay content in the plowed layer (0-0.2 m) ranged from 120 to 610 g kg{sup -1}, pH ranged from 5.3 to 7.3 and organic carbon contents varied from 2.9 to 51 g dm{sup -3}. Among the 29 samples, 16 had the total Cu above the maximum limit allowed by the European Community regulations (140 mg kg{sup -1}). The average amount of Cu bonded to the oxide fraction accounted for 49.5% of the total Cu.

  19. Cu-implanted ZnO nanorods array film: An aqueous synthetic approach

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ajaya Kumar, E-mail: ajayaksingh_au@yahoo.co.in [Department of Chemistry, Govt. VYT PG. Autonomous College Durg, Chhattisgarh (India); Thool, Gautam Sheel [Department of Chemistry, Govt. VYT PG. Autonomous College Durg, Chhattisgarh (India); Singh, R.S. [Department of Physics, Govt. D.T. College, Utai, Durg, Chhattisgarh (India); Singh, Surya Prakash, E-mail: spsingh@iict.res.in [Inorganic and Physical Chemistry Division, CSIR-Indian Institute of Chemical Technology, Uppal road, Tarnaka, Hyderabad 500007 (India)

    2015-01-05

    Highlights: • Cu doped ZnO nanorods were synthesized using low temperature aqueous solution method. • We demonstrated the capping action of TEA via theoretical simulation. • Raman analysis revealed the presence of tensile strain in Cu doped ZnO nanorods. • Growth rate was found to be high in Cu doped ZnO nanorods. - Abstract: Pure and Cu doped ZnO nanorods array are synthesized via two step chemical bath deposition method. The seed layer is prepared by successive ionic layer adsorption reaction (SILAR) method. The synthesized materials have been systematically characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDAX), Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectroscopy. SEM pictures show the existence of vertically well aligned hexagonal ZnO nanorods. EDAX spectrum confirms the presence of Cu in ZnO nanorods. High intense peak of (0 0 2) plane and E{sub 2}{sup high} mode for XRD and Raman spectrum respectively, suggest the ZnO nanorods are adopted c-axis orientation perpendicular to substrate. XRD and Raman analysis shows the presence of tensile strain in Cu doped ZnO nanorods. Effect of Cu doping on lattice constants, unit cell volume and Zn–O bond length of ZnO nanorods have also been studied. Room temperature PL measurement exhibits two luminescence bands in the spectra i.e. UV emission centered at 3.215 eV and a broad visible band. Theoretical investigation for capping action of triethanolamine is done by Hartree–Fock (HF) method with 3-21G basis set using Gaussian 09 program package.

  20. Effects of CuO nanoparticles on Lemna minor.

    Science.gov (United States)

    Song, Guanling; Hou, Wenhua; Gao, Yuan; Wang, Yan; Lin, Lin; Zhang, Zhiwei; Niu, Qiang; Ma, Rulin; Mu, Lati; Wang, Haixia

    2016-12-01

    Copper dioxide nanoparticles (NPs), which is a kind of important and widely used metal oxide NP, eventually reaches a water body through wastewater and urban runoff. Ecotoxicological studies of this kind of NPs effects on hydrophyte are very limited at present. Lemna minor was exposed to media with different concentrations of CuO NPs, bulk CuO, and two times concentration of Cu 2+ released from CuO NPs in culture media. The changes in plant growth, chlorophyll content, antioxidant defense enzyme activities [i.e., peroxidase (POD), catalase (CAT), superoxide dismutase (SOD) activities], and malondialdehyde (MDA) content were measured in the present study. The particle size of CuO NPs and the zeta potential of CuO NPs and bulk CuO in the culture media were also analyzed to complementally evaluate their toxicity on duckweed. Results showed that CuO NPs inhibited the plant growth at lower concentration than bulk CuO. L. minor roots were easily broken in CuO NPs media under the experimental condition, and the inhibition occurred only partly because CuO NPs released Cu 2+ in the culture media. The POD, SOD, and CAT activities of L. minor increased when the plants were exposed to CuO NPs, bulk CuO NPs and two times the concentration of Cu 2+ released from CuO NPs in culture media, but the increase of these enzymes were the highest in CuO NPs media among the three kinds of materials. The MDA content was significantly increased compared with that of the control from 50 mg L -1 CuO NP concentration in culture media. CuO NPs has more toxicity on L. minor compared with that of bulk CuO, and the inhibition occurred only partly because released Cu 2+ in the culture media. The plant accumulated more reactive oxygen species in the CuO NP media than in the same concentration of bulk CuO. The plant cell encountered serious damage when the CuO NP concentration reached 50 mg L -1 in culture media. The toxicology of CuO NP on hydrophytes must be considered because that hydrophytes

  1. Rapid thermal annealing of FePt and FePt/Cu thin films

    Energy Technology Data Exchange (ETDEWEB)

    Brombacher, Christoph

    2011-01-10

    Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO{sub 2} particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L1{sub 0} phase. The influence of the annealing temperature, annealing time and the film thickness on the ordering transformation and (001) texture evolution of FePt films with near equiatomic composition was studied. Whereas flash lamp annealed FePt films exhibit a polycrystalline morphology with high chemical L1{sub 0} order, rapid thermal annealing can lead to the formation of chemically ordered FePt films with (001) texture on amorphous SiO{sub 2}/Si substrates. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneously to the ordering transformation, rapid thermal annealing to temperatures exceeding 600 C leads to a break up of the continuous FePt film into separated islands. This dewetting behavior was utilized to create regular arrays of FePt nanostructures on SiO{sub 2} particle templates with periods down to 50 nm. The addition of Cu improves the (001) texture formation and chemical ordering for annealing temperatures T{sub a} {<=}600 C. In addition, the magnetic anisotropy and the coercivity of the ternary FePtCu alloy can be effectively tailored by adjusting the Cu content. The prospects of FePtCu based exchange spring media, as well as the magnetic properties of FePtCu nanostructures fabricated

  2. Defect properties of CuCrO2: A density functional theory calculation

    International Nuclear Information System (INIS)

    Fang Zhi-Jie; Zhu Ji-Zhen; Zhou Jiang; Mo Man

    2012-01-01

    Using the first-principles methods, we study the formation energetics properties of intrinsic defects, and the charge doping properties of extrinsic defects in transparent conducting oxides CuCrO 2 . Intrinsic defects, some typical acceptor-type, and donor-type extrinsic defects in their relevant charge state are considered. By systematically calculating the formation energies and transition energy, the results of calculation show that, V Cu , O i , and O Cu are the relevant intrinsic defects in CuCrO 2 ; among these intrinsic defects, V Cu is the most efficient acceptor in CuCrO 2 . It is found that all the donor-type extrinsic defects have difficulty in inducing n-conductivity in CuCrO 2 because of their deep transition energy level. For all the acceptor-type extrinsic defects, substituting Mg for Cr is the most prominent doping acceptor with relative shallow transition energy levels in CuCrO 2 . Our calculation results are expected to be a guide for preparing promising n-type and p-type materials in CuCrO 2 . (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. NiTiCu/AlN/NiTiCu shape memory thin film heterostructures for vibration damping in MEMS

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Navjot; Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in

    2014-03-25

    Highlights: • Fabrication of NiTiCu/AlN/NiTiCu heterostructure using dc/rf magnetron sputtering. • Exhibits highest hardness (38 GPa) and elastic modulus (187 GPa). • Enhanced dissipation of mechanical energy (E{sub d} = 5.7 N J). • High damping capacity (0.052) and figure of merit (∼0.62). • Can be applied for vibration damping in MEMS. -- Abstract: Shape memory alloy (NiTiCu) thin films coupled with piezoelectric AlN layer produce an intelligent material for vibration damping. In the present study pure NiTiCu, NiTiCu/AlN and NiTiCu/AlN/NiTiCu heterostructures have been deposited on Si substrate using magnetron sputtering technique. By the use of the interfaces and shape memory effect provided by NiTiCu layers, the damping capacity can be increased along with increase in stiffness and mechanical hardness. The heterostructures were characterized in terms of structural, electrical, morphological and mechanical properties by X-ray diffraction (XRD), four probe resistivity method, atomic force microscopy, field emission scanning electron microscopy, and nanoindentation. The NiTiCu/AlN/NiTiCu heterostructure exhibit enhanced mechanical and damping properties as compared to NiTiCu/AlN and pure NiTiCu. This enhancement in hardness and damping of the heterostructure could be attributed to the shape memory effect of NiTiCu, intrinsic piezoelectricity of AlN and increased number of interfaces in heterostructure that help in dissipation of mechanical vibrations. The findings of this work provide additional impetus for the application of these heterostructures in emerging fields of nanotechnology and microelectro mechanical (MEMS) devices.

  4. NiTiCu/AlN/NiTiCu shape memory thin film heterostructures for vibration damping in MEMS

    International Nuclear Information System (INIS)

    Kaur, Navjot; Kaur, Davinder

    2014-01-01

    Highlights: • Fabrication of NiTiCu/AlN/NiTiCu heterostructure using dc/rf magnetron sputtering. • Exhibits highest hardness (38 GPa) and elastic modulus (187 GPa). • Enhanced dissipation of mechanical energy (E d = 5.7 N J). • High damping capacity (0.052) and figure of merit (∼0.62). • Can be applied for vibration damping in MEMS. -- Abstract: Shape memory alloy (NiTiCu) thin films coupled with piezoelectric AlN layer produce an intelligent material for vibration damping. In the present study pure NiTiCu, NiTiCu/AlN and NiTiCu/AlN/NiTiCu heterostructures have been deposited on Si substrate using magnetron sputtering technique. By the use of the interfaces and shape memory effect provided by NiTiCu layers, the damping capacity can be increased along with increase in stiffness and mechanical hardness. The heterostructures were characterized in terms of structural, electrical, morphological and mechanical properties by X-ray diffraction (XRD), four probe resistivity method, atomic force microscopy, field emission scanning electron microscopy, and nanoindentation. The NiTiCu/AlN/NiTiCu heterostructure exhibit enhanced mechanical and damping properties as compared to NiTiCu/AlN and pure NiTiCu. This enhancement in hardness and damping of the heterostructure could be attributed to the shape memory effect of NiTiCu, intrinsic piezoelectricity of AlN and increased number of interfaces in heterostructure that help in dissipation of mechanical vibrations. The findings of this work provide additional impetus for the application of these heterostructures in emerging fields of nanotechnology and microelectro mechanical (MEMS) devices

  5. Long-Lived Termite Queens Exhibit High Cu/Zn-Superoxide Dismutase Activity

    Directory of Open Access Journals (Sweden)

    Eisuke Tasaki

    2018-01-01

    Full Text Available In most organisms, superoxide dismutases (SODs are among the most effective antioxidant enzymes that regulate the reactive oxygen species (ROS generated by oxidative energy metabolism. ROS are considered main proximate causes of aging. However, it remains unclear if SOD activities are associated with organismal longevity. The queens of eusocial insects, such as termites, ants, and honeybees, exhibit extraordinary longevity in comparison with the nonreproductive castes, such as workers. Therefore, the queens are promising candidates to study the underlying mechanisms of aging. Here, we found that queens have higher Cu/Zn-SOD activity than nonreproductive individuals of the termite Reticulitermes speratus. We identified three Cu/Zn-SOD sequences and one Mn-SOD sequence by RNA sequencing in R. speratus. Although the queens showed higher Cu/Zn-SOD activity than the nonreproductive individuals, there were no differences in their expression levels of the Cu/Zn-SOD genes RsSOD1 and RsSOD3A. Copper (Cu2+ and Cu+ is an essential cofactor for Cu/Zn-SOD enzyme activity, and the queens had higher concentrations of copper than the workers. These results suggest that the high Cu/Zn-SOD activity of termite queens is related to their high levels of the cofactor rather than gene expression. This study highlights that Cu/Zn-SOD activity contributes to extraordinary longevity in termites.

  6. Measurements of low photon doses using LiF:Mg,Cu,P and CaF{sub 2}:Cu dosimeters

    Energy Technology Data Exchange (ETDEWEB)

    Prokert, K [Dresden Univ. of Technology (Germany). Inst. of Radiation Protection Physics; Mann, G [Dresden Univ. of Technology (Germany). Inst. of Radiation Protection Physics

    1997-03-01

    The new thermoluminophors LiF:Mg, Cu, P and CaF{sub 2}:Cu in form of pellets exhibit a significantly higher TL-response than the well-known dosimeters of the types TLD-100 (LiF:Mg, Ti), TLD-400 (CaF{sub 2}:Mn), TLD-900 (CaSO{sub 4}:Dy), etc. Furthermore, the thermoluminophor LiF:Mg, Cu, P shows besides its high sensitivity a good tissue equivalence and therefore, only a small variation of the dose response with the photon energy. The lower limits of detection of these new materials are about 5 {mu}Gy and 0.2 {mu}Gy resp. Therefore, short term measurements of absorbed dose can be realised in radiation fields at very low dose rates (environmental radiation, scattering radiation at medical equipment`s etc.) with an accuracy of {+-}10%. In the field of environmental monitoring the period of exposure can be limited to about 10 days. Using CaF{sub 2}:Cu detectors an exposure of 24 hours is sufficient for dose measurements with lower accuracy. The reusability of CaF{sub 2}:Cu pellets is guaranteed without loss of sensitivity independently of the application of different reading and annealing procedures. In the case of LiF:Mg, Cu, P detectors special procedures are needed in order to keep constant TL-properties. The results of dose measurements at low dose levels in different radiation fields demonstrate the advantages of these detector types. (orig.)

  7. Sacrificial wafer bonding for planarization after very deep etching

    NARCIS (Netherlands)

    Spiering, V.L.; Spiering, Vincent L.; Berenschot, Johan W.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

    A new technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for as well resist spinning and layer patterning as realization of bridges or cantilevers across deep holes or grooves. The sacrificial wafer bonding technique contains a

  8. Recycled hierarchical tripod-like CuCl from Cu-PCB waste etchant for lithium ion battery anode

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Song [Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming 650093 China (China); Hou, Hongying, E-mail: hongyinghou@kmust.edu.cn [Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming 650093 China (China); Liu, Xianxi [Faculty of Mechanical and Electronic Engineering, Kunming University of Science and Technology, Kunming 650093 China (China); Duan, Jixiang; Yao, Yuan; Liao, Qishu; Li, Jing; Yang, Yunzhen [Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming 650093 China (China)

    2017-02-15

    Highlights: • High EVA CuCl was recycled with 85% recovery from Cu-PCB waste etchant. • The recycled CuCl displayed a hierarchical tripod-like morphology. • The evolution mechanism of the recycled hierarchical CuCl crystal was proposed. • The corresponding discharge capacity in LIB was 201.4 mAh/g after 100 cycles. • The results shed a new light on resource recovery and environmental protection. - Abstract: Hierarchical CuCl with high economic value added (EVA) was successfully recycled with 85% recovery from the acid Cu printed circuit board (Cu-PCB) waste etchant via facile liquid chemical reduction. The micro-structure and morphology of the recycled hierarchical CuCl were systematically characterized in terms of scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), transmission electron microscopy (TEM) and Brunauer-Emmett-Teller (BET). Furthermore, the corresponding electrochemical performances as lithium ion battery (LIB) anode were also investigated in terms of galvanostatic charge/discharge, cyclic voltammetry (CV) and AC impedance. As expected, the recycled CuCl displayed a hierarchical tripod-like structure and large specific surface area of 21.2 m{sup 2}/g. As the anode in LIB, the reversible discharge capacity was about 201.4 mAh/g even after 100 cycles, implying the satisfactory cycle performance. Clearly, the satisfactory results may open a new avenue to develop the sustainable industry, which is very important in terms of both the resource recovery and the environmental protection.

  9. Electrochemical preparation of uniform CuO/Cu2O heterojunction on β-cyclodextrin-modified carbon fibers

    KAUST Repository

    Chen, Fang-Ping

    2016-01-18

    Abstract: In this work, a uniform heterojunction of cupric oxide/cuprous oxide was decorated on the surface of carbon fibers by electrochemical method (CuO/Cu2O/CDs/CFs). Methyl-β-cyclodextrin was first grafted on the surface of carbon fibers (CDs/CFs). Cubic cuprous oxide was electrodeposited on the surface of (Cu2O/CDs/CFs) in 0.1 M KNO3, the cuprous oxide was then partly anodized to cupric oxide to form a heterojunction of cupric oxide/cuprous oxide with a burr shape (CuO/Cu2O/CDs/CFs). The obtained materials were characterized by field emission scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and electrochemical techniques. The potential application in pollution treatment was further investigated, and the prepared CuO/Cu2O/CDs/CFs could be a promising adsorbent/photocatalyst toward the uptake and degradation of 2, 6-dichlorophenol (2, 6-DCP). Graphical Abstract: [Figure not available: see fulltext.] © 2016 Springer Science+Business Media Dordrecht

  10. Computer simulations of nanoindentation in Mg-Cu and Cu-Zr metallic glasses

    DEFF Research Database (Denmark)

    Paduraru, Anca; Andersen, Ulrik Grønbjerg; Thyssen, Anders

    2010-01-01

    The formation of shear bands during plastic deformation of Cu0.50Zr0.50 and Mg0.85Cu0.15 metallic glasses is studied using atomic-scale computer simulations. The atomic interactions are described using realistic many-body potentials within the effective medium theory, and are compared with similar...... simulations using a Lennard-Jones description of the material. The metallic glasses are deformed both in simple shear and in a simulated nanoindentation experiment. Plastic shear localizes into shear bands with a width of approximately 5 nm in CuZr and 8 nm in MgCu. In simple shear, the shear band formation...... is very clear, whereas only incipient shear bands are seen in nanoindentation. The shear band formation during nanoindentation is sensitive to the indentation velocity, indenter radius and the cooling rate during the formation of the metallic glass. For comparison, a similar nanoindentation simulation...

  11. Detecting properties of thin film superconducting bridges made of YBa2Cu3O7-x

    International Nuclear Information System (INIS)

    Kulikov, V.A.; Matveets, L.V.; Serebryakov, A.Yu.; Laptev, V.N.; Makhov, V.I.; Emel'yanenkov, D.G.; Inkin, Yu.N.

    1989-01-01

    Results of study of detecting properties of thin film YBa 2 Cu 3 O 7-x bridges, subjected to the effect of 8 mm SHF-radiation are presented. The transition temperatures of bridges were equal to 80-85 K. Current-voltage characteristics and response dependences of bridges with 67, 150 and 425 Ω resistances were measured. It is shown that thin film bridges of YBa 2 Cu 3 O 7-x , representing the system of weak bonds, demonstrate nonstationary Josephson effect and synchronization of weak bonds in bridge volume

  12. Syntheses, crystal Structures and electronic Structures of new metal chalcoiodides Bi{sub 2}CuSe{sub 3}I and Bi{sub 6}Cu{sub 3}S{sub 10}I

    Energy Technology Data Exchange (ETDEWEB)

    Liang, I-Chu [Department of Chemistry, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Bilc, Daniel I. [Department of Molecular & Biomolecular Physics, National Institute for Research & Development of Isotopic & Molecular Technologies, Cluj-Napoca 400293 (Romania); Manoli, Maria [Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia (Cyprus); Chang, Wei-Yun; Lin, Wen-Fu [Department of Chemistry, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Kyratsi, Theodora [Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia (Cyprus); Hsu, Kuei-Fang [Department of Chemistry, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

    2016-02-15

    Two new metal chalcoiodides were synthesized by solid-state reactions at 400 °C. Crystal Data: Bi{sub 2}CuSe{sub 3}I, 1, monoclinic, C2/m, a=14.243(2) Å, b=4.1937(7) Å, c=14.647(2) Å, β=116.095(2)°, V=785.7(2) Å{sup 3}, and Z=4; Bi{sub 6}Cu{sub 3}S{sub 10}I, 2, orthorhombic, Pnma, a=17.476(2) Å, b=4.0078(4) Å, c=27.391(2) Å, V=1918.5(3) Å{sup 3}, and Z=4. Compound 1 adopts a three-dimensional structure formed by two alternative layers, which consist of BiSe{sub 5} square pyramids, BiSe{sub 4}I{sub 2} octahedra, CuSe{sub 4} tetrahedra, and CuSe{sub 2}I{sub 2} tetrahedra. Compound 2 possesses a new open framework built up of BiS{sub 5} square pyramides, BiS{sub 6} octahedra, BiS{sub 8} polyhedra, and CuS{sub 4} tetrahedra where I{sup −} anions are uniquely trapped within the tunnels. Both electronic structures reveal that bismuth and chalcogenide orbitals dominate the bandgaps. The Cu d and I p states contribute to the top of valence bands, in which the distribution of I orbitals may correspond to the relative bonding interactions in 1 and 2. The optical bandgaps determined by the diffuse reflectance spectra are 0.68 eV and 0.72 eV for 1 and 2, respectively. 1 is a p-type semiconductor with high Seebeck coefficients of 460–575 μV/K in the temperature range of 300–425 K. The electrical conductivity is 0.02 S/cm at 425 K for the undoped sample. The thermal conductivity is 0.22 W/mK at 425 K. - Graphical abstract: The hybridization of chalcogenides and iodides produces two new solids Bi2CuSe3I and Bi6Cu3S10I. The I{sup −} anions participate in distinct bonding interactions within the two structures and that is consistent with the analyses of density of states. 1 is a p-type semiconductor with an optical bandgap of 0.68 eV, which possesses high Seebeck coefficient and low lattice thermal conductivity in 300–425 K.

  13. Formation and evolution of nanoporous bimetallic Ag-Cu alloy by electrochemically dealloying Mg-(Ag-Cu)-Y metallic glass

    International Nuclear Information System (INIS)

    Li, Ran; Wu, Na; Liu, Jijuan; Jin, Yu; Chen, Xiao-Bo; Zhang, Tao

    2017-01-01

    Highlights: • Uniform nanoporous Ag-Cu alloy was fabricated by dealloying Mg-based metallic glass. • The nanoporous structure was built up with numerous Ag-Cu ligaments. • The nanoporous ligaments show two-stage coarsening behavior with dealloying time. • The formation and evolution mechanisms of the nanoporous structure were clarified. • It could provide new guidance to the synthesis of nanoporous multi-component alloys. - Abstract: A three-dimensional nanoporous bimetallic Ag-Cu alloy with uniform chemical composition has been fabricated by dealloying Mg_6_5Ag_1_2_._5Cu_1_2_._5Y_1_0 metallic glass in dilute (0.04 M) H_2SO_4 aqueous solution under free-corrosion conditions. The nanoporous Ag-Cu evolves through two distinct stages. First, ligaments of the nanoporous structure, consisting of supersaturated Ag(Cu) solid solution with a constant Ag/Cu mole ratio of 1:1, are yielded. Second, with excessive immersion, some Cu atoms separate from the metastable nanoporous matrix and form spherical Cu particles on the sample surface. Formation and evolution mechanisms of the nanoporous structure are proposed.

  14. The rotational spectrum of CuCCH(X̃  1Σ+): a Fourier transform microwave discharge assisted laser ablation spectroscopy and millimeter/submillimeter study.

    Science.gov (United States)

    Sun, M; Halfen, D T; Min, J; Harris, B; Clouthier, D J; Ziurys, L M

    2010-11-07

    The pure rotational spectrum of CuCCH in its ground electronic state (X̃  (1)Σ(+)) has been measured in the frequency range of 7-305 GHz using Fourier transform microwave (FTMW) and direct absorption millimeter/submillimeter methods. This work is the first spectroscopic study of CuCCH, a model system for copper acetylides. The molecule was synthesized using a new technique, discharge assisted laser ablation spectroscopy (DALAS). Four to five rotational transitions were measured for this species in six isotopologues ((63)CuCCH, (65)CuCCH, (63)Cu(13)CCH, (63)CuC(13)CH, (63)Cu(13)C(13)CH, and (63)CuCCD); hyperfine interactions arising from the copper nucleus were resolved, as well as smaller splittings in CuCCD due to deuterium quadrupole coupling. Five rotational transitions were also recorded in the millimeter region for (63)CuCCH and (65)CuCCH, using a Broida oven source. The combined FTMW and millimeter spectra were analyzed with an effective Hamiltonian, and rotational, electric quadrupole (Cu and D) and copper nuclear spin-rotation constants were determined. From the rotational constants, an r(m)(2) structure for CuCCH was established, with r(Cu-C) = 1.8177(6) Å, r(C-C) = 1.2174(6) Å, and r(C-H) = 1.046(2) Å. The geometry suggests that CuCCH is primarily a covalent species with the copper atom singly bonded to the C≡C-H moiety. The copper quadrupole constant indicates that the bonding orbital of this atom may be sp hybridized. The DALAS technique promises to be fruitful in the study of other small, metal-containing molecules of chemical interest.

  15. Surface studies by low energy ion beams: Cu/Ru(0001) and Cu/O/Ru(0001)

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Y.G.; O`Connor, D.J.; MacDonald, R.J. [Newcastle Univ., NSW (Australia). Dept. of Physics; Wandelt, H. [Institut fur Physikalische und Theoretische Chemie der Universitat Bonn, Bonn (Germany).; Zee, H. van [Eindhoven University of Technology, Eindhoven (Netherlands) Dept. of Physics

    1993-12-31

    The surface structure of Cu on Ru(OOO1) has been studied by low energy Li{sup +} ion scattering. It was found that Cu forms pseudomorphic islands for two layers. The effects of Cu on an O-precovered RU(OOO1) surface has also been investigated using keV He{sup +} ions. The results show that during the deposition of Cu, O is displaced from the Ru surface and migrated onto the top of the surface of the growing overlayer. The floated out O has been tested, showing a disordered overlayer. 5 refs., 3 figs.

  16. Surface studies by low energy ion beams: Cu/Ru(0001) and Cu/O/Ru(0001)

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Y G; O` Connor, D J; MacDonald, R J [Newcastle Univ., NSW (Australia). Dept. of Physics; Wandelt, H [Institut fur Physikalische und Theoretische Chemie der Universitat Bonn, Bonn (Germany).; Zee, H van [Eindhoven University of Technology, Eindhoven (Netherlands) Dept. of Physics

    1994-12-31

    The surface structure of Cu on Ru(OOO1) has been studied by low energy Li{sup +} ion scattering. It was found that Cu forms pseudomorphic islands for two layers. The effects of Cu on an O-precovered RU(OOO1) surface has also been investigated using keV He{sup +} ions. The results show that during the deposition of Cu, O is displaced from the Ru surface and migrated onto the top of the surface of the growing overlayer. The floated out O has been tested, showing a disordered overlayer. 5 refs., 3 figs.

  17. Toxic effects of Cu2+ on growth, nutrition, root morphology, and distribution of Cu in roots of Sabi grass

    International Nuclear Information System (INIS)

    Kopittke, P.M.; Asher, C.J.; Blamey, F.P.C.; Menzies, N.W.

    2009-01-01

    Sabi grass (Urochloa mosambicensis (Hack.) Dandy) (a C4 species of Poaceae) is commonly used to revegetate disturbed sites in low-rainfall environments, but comparatively little is known regarding copper (Cu) toxicity in this species. A dilute nutrient solution culture experiment was conducted for 10 d to examine the effects of elevated Cu 2+ activities ({Cu 2+ }) on the growth of Sabi grass. Growth was inhibited by high Cu in solution, with a 50% reduction in the relative fresh mass occurring at 1.0 μM {Cu 2+ } for the roots and 1.2 μM {Cu 2+ } for the shoots. In solutions containing 1.2-1.9 μM {Cu 2+ }, many of the roots ruptured due to the tearing and separation of the rhizodermis and outer cortex from the underlying tissues. Transmission electron microscopy revealed that Cu-rich deposits were found to accumulate predominantly within vacuoles. Due to limited translocation of Cu from the roots to the shoots, phytotoxicity is likely to be more of a problem in remediation of Cu-toxic sites than is Cu toxicity of fauna consuming the above-ground biomass.

  18. Use of micro-PIXE to determine spatial distributions of copper in Brassica carinata plants exposed to CuSO4 or CuEDDS

    International Nuclear Information System (INIS)

    Cestone, Benedetta; Vogel-Mikuš, Katarina; Quartacci, Mike Frank; Rascio, Nicoletta; Pongrac, Paula; Pelicon, Primož; Vavpetič, Primož; Grlj, Nataša; Jeromel, Luka; Kump, Peter; Nečemer, Marijan; Regvar, Marjana; Navari-Izzo, Flavia

    2012-01-01

    A better understanding of the mechanisms that govern copper (Cu) uptake, distribution and tolerance in Brassica carinata plants in the presence of chelators is needed before significant progress in chelate-assisted Cu phytoextraction can be made. The aims of this study were therefore to characterise (S,S)-N,N′-ethylenediamine disuccinic acid (EDDS)-assisted Cu uptake, and to compare the spatial distribution patterns of Cu in the roots and leaves of B. carinata plants. The plants were treated with 30 μM or 150 μM CuSO 4 or CuEDDS in hydroponic solution. Quantitative Cu distribution maps and concentration profiles across root and leaf cross-sections of the desorbed plants were obtained by micro-proton induced X-ray emission. In roots, the 30 μM treatments with both CuSO 4 and CuEDDS resulted in higher Cu concentrations in epidermal/cortical regions. At 150 μM CuSO 4 , Cu was mainly accumulated in root vascular bundles, whereas with 150 μM CuEDDS, Cu was detected in endodermis and the adjacent inner cortical cell layer. Under all treatments, except with a H + -ATP-ase inhibitor, the Cu in leaves was localised mainly in vascular tissues. The incubation of plants with 150 μM CuEDDS enhanced metal translocation to shoots, in comparison to the corresponding CuSO 4 treatment. Inhibition of H + -ATPase activity resulted in reduced Cu accumulation in 30 μM CuEDDS-treated roots and 150 μM CuEDDS-treated leaves, and induced changes in Cu distribution in the leaves. This indicates that active mechanisms are involved in retaining Cu in the leaf vascular tissues, which prevent its transport to photosynthetically active tissues. The physiological significance of EDDS-assisted Cu uptake is discussed. - Highlights: ► We localised Cu in Brassica carinata treated with CuSO 4 or CuEDDS by micro-PIXE. ► EDDS-assisted Cu uptake and transport resulted in preserved root endodermis. ► EDDS enhanced Cu transport from roots to shoots. ► Cu sequestration within leaf veins

  19. Nuclear hyperfine structure of muonium in CuCl resolved by means of avoided level crossing

    International Nuclear Information System (INIS)

    Schneider, J.W.; Celio, M.; Keller, H.; Kuendig, W.; Odermatt, W.; Puempin, B.; Savic, I.M.; Simmler, H.; Estle, T.L.; Schwab, C.; Kiefl, R.F.; Renker, D.

    1990-01-01

    We report detailed avoided-level-crossing spectra of a muonium center (Mu II ) in single-crystal CuCl in a magnetic field range of 4--5 T and at a temperature of 100 K. The hyperfine parameters of the muon and the closest two shells of nuclei indicate that this center consists of muonium at a tetrahedral interstice with four Cu nearest neighbors and six Cl next-nearest neighbors and that the spin density is appreciable on the muon and on the ten neighboring nuclei but negligible elsewhere

  20. Enhancement of oxidation resistance in Cu and Cu(Al) thin layers

    International Nuclear Information System (INIS)

    Horvath, Z.E.; Peto, G.; Paszti, Z.; Zsoldos, E.; Szilagyi, E.; Battistig, G.; Lohner, T.; Molnar, G.L.; Gyulai, J.

    1999-01-01

    High conductivity and good resistance to electromigration makes copper a promising interconnect material in microelectronics. However, one of its disadvantages is the poor corrosion resistance. Two methods of passivation are investigated and compared: Al alloying and BF 2 + ion implantation. X-ray diffraction (XRD) and Rutherford Backscattering Spectrometry (RBS) show the oxidation inhibition of both methods, but the different ratio of CuO 2 to CuO phases suggests different mechanisms of passivation. There are no definite oxide lines in the XRD spectrum of the implanted and annealed Cu(Al) sample, so the presence of Al and the implantation together give increased protection against oxidation. The difference between the two mechanisms of oxidation inhibition is discussed briefly