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Sample records for w-si-n ternary systems

  1. Sc-W-Si and Sc-W-Ge ternary systems

    International Nuclear Information System (INIS)

    Kotur, B.Ya.; Voznyak, O.M.; Bodak, O.I.

    1989-01-01

    Phase equilibria in Sc-W-Si and Sc-W-Ge ternary systems are investigated at 1070 K. Sc 2+x W 3-x Si 4 ternary compound (0≤x≤1) is determined, its crystal structure (Ce 2 Sc 3 Si 4 structural type), as well as, change of elementary cell parameters and microhardness within homogeneity range are determined. Regularities of component interaction within Sc-M-Si(Ge) (M-Cr, Mo, W) ternary system are determined. Ternary systems with Mo and W are more closer to each other according to the phase equilibria character, than to ternary systems with Cr

  2. The ternary systems Sc-Sm(Dy)-Si at 870 K

    International Nuclear Information System (INIS)

    Kotur, B.Ya.; Mokra, I.Ya.; Toporinskij, A.Ya.

    1991-01-01

    Isothermal cross sections of the ternary systems Sc-Sm-Si and Sc-Dy-Si at 870 K have been plotted. Investigation of scandium and disprosium in ternary systems have been examined by X-ray diffraction and microstructure analysis. Besides literary data on binary systems Sc-Si, Sm-Si, Dy-Si have been used. Formation of limited (Sc-Sm-Si, Sc-Dy-Si) and continuous (Sc-Dy-Si) solid solutions based on bisilicides of Sc and Sm(Dy) is discovered. Two and five ternary compounds in Sc-Sm-Si and Sc-Dy-Si systems have been determined and their crystal structure has been established. When investigating of Sc-(rare earth element)-Si ternary systems and should take into account the specific interaction of scandium and samarium with REE

  3. Experimental investigation of phase equilibria in the Co-W-V ternary system

    International Nuclear Information System (INIS)

    Liu Xingjun; Zhu Yihong; Yu Yan; Wang Cuiping

    2011-01-01

    Highlights: → Three isothermal sections of the Co-W-V ternary system at 1100 deg. C, 1200 deg. C and 1300 deg. C were determined. → No ternary compound was found in the Co-W-V ternary system. → A stable liquid miscibility gap is newly discovered in the Co-W-V ternary system. → This work is of great essence to establish the thermodynamic database for the Co-based alloys. - Abstract: The phase equilibria in the Co-W-V ternary system were experimentally investigated by optical microscopy (OM), electron probe microanalysis (EPMA) and X-ray diffraction (XRD) on the equilibrated alloys. Three isothermal sections of the Co-W-V ternary system at 1100 deg. C, 1200 deg. C and 1300 deg. C were determined, and no ternary compound was found in this system. In addition, a novel phenomena induced by the liquid phase separation in the Co-W-V alloys was firstly discovered, suggesting that a stable liquid miscibility gap exists in the Co-W-V ternary system. The newly determined phase equilibria and firstly discovered phase separation phenomena in the Co-W-V system will provide important information for the development of Co-W based alloys.

  4. Phase equilibria in M-X-X' and M-Al-X ternary systems (M-transition metal, X,X'-B,C,N,Si) and crystal chemistry of ternary compounds

    International Nuclear Information System (INIS)

    Gusev, A.I.

    1996-01-01

    The data on phase equilibria in the M-X-X' and M-Al-X ternary systems (M-transition metal of 3 to 8 groups, X-B,C, N, Si) have been considered and summarized. modern oxygen-free advanced ceramics is based on these ternary systems. Phase diagrams of the 130 ternary systems have been discussed, more than two hundred ternary phases forming in these systems have been systematized and described. The typical crystal structures of ternary compounds and phase have been considered, the common and distinctive features of these structures have been analysed. It has been shown that the ternary compounds with octahedral atomic groups XM 6 have a regions of homogeneity. Refs. 240

  5. Experimental investigation of phase equilibria in the Cu–Ni–Si ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xingjun; Xiang, Shulin; Yang, Shuiyuan; Shi, Rongpei; Wang, Cuiping, E-mail: wangcp@xmu.edu.cn

    2013-11-25

    Highlights: •Three isothermal sections of the Cu–Ni–Si system have been investigated. •The ternary compound τ{sub 1} and the liquid phase are confirmed at 1073 K. •The γ (Cu{sub 5}Si) and θ (Ni{sub 2}Si) phases can be stabilized at higher or lower temperatures. -- Abstract: The phase equilibria in the Cu–Ni–Si ternary system have been investigated experimentally by means of electron probe microanalysis (EPMA), X-ray diffraction (XRD) and differential scanning calorimetry (DSC) analysis on equilibrated ternary alloys. Three isothermal sections at 1073, 1173 and 1273 K are determined in the whole composition range. The existence of liquid phase and the ternary compound τ{sub 1} is confirmed at 1073 K. The binary γ (Cu{sub 5}Si), γ (Ni{sub 31}Si{sub 12}), δ (Ni{sub 2}Si) and θ (Ni{sub 2}Si) phases exhibit a considerable solubility of a third element. In addition, the γ (Cu{sub 5}Si) and θ (Ni{sub 2}Si) phases can be stabilized by the addition of Ni and Cu, respectively.

  6. Ternary systems Sr-{Ni,Cu}-Si: Phase equilibria and crystal structure of ternary phases

    International Nuclear Information System (INIS)

    Nasir, Navida; Melnychenko-Koblyuk, Nataliya; Grytsiv, Andriy; Rogl, Peter; Giester, Gerald; Wosik, Jaroslaw; Nauer, Gerhard E.

    2010-01-01

    Phase relations were established in the Sr-poor part of the ternary systems Sr-Ni-Si (900 deg. C) and Sr-Cu-Si (800 deg. C) by light optical microscopy, electron probe microanalysis and X-ray diffraction on as cast and annealed alloys. Two new ternary compounds SrNiSi 3 (BaNiSn 3 -type) and SrNi 9-x Si 4+x (own-type) were found in the Sr-Ni-Si system along with previously reported Sr(Ni x Si 1-x ) 2 (AlB 2 -type). The crystal structure of SrNi 9-x Si 4+x (own-type, x=2.7, a=0.78998(3), c=1.1337(2) nm; space group P4/nbm) was determined from X-ray single crystal counter to be a low symmetry derivative of the cubic, parent NaZn 13 -type. At higher Si-content X-ray Rietveld refinements reveal the formation of a vacant site (□) corresponding to a formula SrNi 5.5 Si 6.5 □ 1.0 . Phase equilibria in the Sr-Cu-Si system are characterized by the compounds SrCu 2-x Si 2+x (ThCr 2 Si 2 -type), Sr(Cu x Si 1-x ) 2 (AlB 2 -type), SrCu 9-x Si 4+x (0≤x≤1.0; CeNi 8.5 Si 4.5 -type) and SrCu 13-x Si x (4≤x≤1.8; NaZn 13 -type). The latter two structure types appear within a continuous solid solution. Neither a type-I nor a type-IX clathrate compound was encountered in the Sr-{Cu,Ni}-Si systems. Structural details are furthermore given for about 14 new ternary compounds from related alloy systems with Ba. - Graphical abstract: The crystal structure of SrNi 9-x Si 4+x (own-type, x=2.7, a=0.78998(3), c=1.1337(2) nm; space group P4/nbm) was determined from X-ray single crystal counter to be a low symmetry derivative of the cubic, parent NaZn 13 -type and is related to CeNi 8.5 Si 4.5 -type.

  7. The constitution of alloys in the Al-rich corner of the Al-Si-Sm ternary system

    International Nuclear Information System (INIS)

    Markoli, B.; Spaic, S.; Zupanic, F.

    2001-01-01

    The constitution of alloys and the liquidus surface in the Al-rich corner of the Al-Si-Sm ternary system were determined by the examination of controlled heated and cooled specimens, as well as heat-treated specimens by means of optical and scanning electron microscopy, energy-dispersive X-ray spectroscopy, differential thermal analysis and X-ray diffraction. The Al-rich corner of the Al-Si-Sm ternary system comprises five regions of primary crystallisation (α Al , β Si , Al 3 Sm, Al 2 Si 2 Sm and AlSiSm) with following characteristic invariant reaction sequences: ternary eutectic reaction L → α Al + β Si + Al 2 Si 2 Sm, and two liquidus transition reactions, i. e., L + Al 3 Sm → α Al + AlSiSm, and L + AlSiSm → α Al + Al 2 Si 2 Sm. Along with the position of ternary eutectic and both interstitial points in the Al-rich corner of the Al-Si-Sm ternary system, the temperatures for each reaction were determined. (orig.)

  8. The constitution of alloys in the Al-rich corner of the Al-Si-Sm ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Markoli, B.; Spaic, S. [Ljubljana Univ. (Slovenia). Faculty of Natural Science and Engineering; Zupanic, F. [Maribor Univ. (Slovenia). Faculty of Mechanical Engineering

    2001-09-01

    The constitution of alloys and the liquidus surface in the Al-rich corner of the Al-Si-Sm ternary system were determined by the examination of controlled heated and cooled specimens, as well as heat-treated specimens by means of optical and scanning electron microscopy, energy-dispersive X-ray spectroscopy, differential thermal analysis and X-ray diffraction. The Al-rich corner of the Al-Si-Sm ternary system comprises five regions of primary crystallisation ({alpha}{sub Al}, {beta}{sub Si}, Al{sub 3}Sm, Al{sub 2}Si{sub 2}Sm and AlSiSm) with following characteristic invariant reaction sequences: ternary eutectic reaction L {yields} {alpha}{sub Al} + {beta}{sub Si} + Al{sub 2}Si{sub 2}Sm, and two liquidus transition reactions, i. e., L + Al{sub 3}Sm {yields} {alpha}{sub Al} + AlSiSm, and L + AlSiSm {yields} {alpha}{sub Al} + Al{sub 2}Si{sub 2}Sm. Along with the position of ternary eutectic and both interstitial points in the Al-rich corner of the Al-Si-Sm ternary system, the temperatures for each reaction were determined. (orig.)

  9. Phase Equilibria of the Sn-Ni-Si Ternary System and Interfacial Reactions in Sn-(Cu)/Ni-Si Couples

    Science.gov (United States)

    Fang, Gu; Chen, Chih-chi

    2015-07-01

    Interfacial reactions in Sn/Ni-4.5 wt.%Si and Sn-Cu/Ni-4.5 wt.%Si couples at 250°C, and Sn-Ni-Si ternary phase equilibria at 250°C were investigated in this study. Ni-Si alloys, which are nonmagnetic, can be regarded as a diffusion barrier layer material in flip chip packaging. Solder/Ni-4.5 wt.%Si interfacial reactions are crucial to the reliability of soldered joints. Phase equilibria information is essential for development of solder/Ni-Si materials. No ternary compound is present in the Sn-Ni-Si ternary system at 250°C. Extended solubility of Si in the phases Ni3Sn2 and Ni3Sn is 3.8 and 6.1 at.%, respectively. As more Si dissolves in these phases their lattice constants decrease. No noticeable ternary solubility is observed for the other intermetallics. Interfacial reactions in solder/Ni-4.5 wt.%Si are similar to those for solder/Ni. Si does not alter the reaction phases. No Si solubility in the reaction phases was detected, although rates of growth of the reaction phases were reduced. Because the alloy Ni-4.5 wt.%Si reacts more slowly with solders than pure Ni, the Ni-4.5 wt.%Si alloy could be a potential new diffusion barrier layer material for flip chip packaging.

  10. Experimental investigation of phase equilibria in the Nb-Si-Ta ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jian; Wang, Cuiping; Yao, Jun; Yang, Shuiyuan; Zhan Shi; Liu, Xingjun [Xiamen Univ. (China). Dept. of Materials Science and Engineering; Xiamen Univ. (China). Fujian Provincial Key Laboratory of Materials Genome; Kang, Yongwang [Beijing Institute of Aeronautical Materials (China). Science and Technology on Advanced High Temperature Structural Materials Lab.

    2016-12-15

    The phase equilibria in the Nb-Si-Ta ternary system at 1 373 K, 1 473 K and 1 573 K were investigated by means of back-scattered electron imaging, electron probe microanalysis and X-ray diffraction. The isothermal sections at 1 373 K, 1 473 K and 1 573 K consist of two three-phase regions and seven two-phase regions, without any ternary compounds. The compounds of NbSi{sub 2} and TaSi{sub 2}, αNb{sub 5}Si{sub 3} and αTa{sub 5}Si{sub 3} form continuous solid solutions, respectively. The solubilities of Nb in Ta{sub 3}Si and Ta{sub 2}Si phases are extremely large, whereas the solubility of Si in the β(Nb, Ta) phase is relatively small.

  11. Novel siRNA delivery system using a ternary polymer complex with strong silencing effect and no cytotoxicity.

    Science.gov (United States)

    Kodama, Yukinobu; Shiokawa, Yumi; Nakamura, Tadahiro; Kurosaki, Tomoaki; Aki, Keisei; Nakagawa, Hiroo; Muro, Takahiro; Kitahara, Takashi; Higuchi, Norihide; Sasaki, Hitoshi

    2014-01-01

    We developed a novel small interfering RNA (siRNA) delivery system using a ternary complex with polyethyleneimine (PEI) and γ-polyglutamic acid (γ-PGA), which showed silencing effect and no cytotoxicity. The binary complexes of siRNA with PEI were approximately 73-102 nm in particle size and 45-52 mV in ζ-potential. The silencing effect of siRNA/PEI complexes increased with an increase of PEI, and siRNA/PEI complexes with a charge ratio greater than 16 showed significant luciferase knockdown in a mouse colon carcinoma cell line regularly expressing luciferase (Colon26/Luc cells). However, strong cytotoxicity and blood agglutination were observed in the siRNA/Lipofectamine complex and siRNA/PEI16 complex. Recharging cationic complexes with an anionic compound was reported to be a promising method for overcoming these toxicities. We therefore prepared ternary complexes of siRNA with PEI (charge ratio 16) by the addition of γ-PGA to reduce cytotoxicity and deliver siRNA. As expected, the cytotoxicity of the ternary complexes decreased with an increase of γ-PGA content, which decreased the ζ-potential of the complexes. A strong silencing effect comparable to siRNA/Lipofectamine complex was discovered in ternary complexes including γ-PGA with an anionic surface charge. The high incorporation of ternary complexes into Colon26/Luc cells was confirmed with fluorescence microcopy. Having achieved knockdown of an exogenously transfected gene, the ability of the complex to mediate knockdown of an endogenous housekeeping gene, glyceraldehyde 3-phosphate dehydrogenase (GAPDH), was assessed in B16-F10 cells. The ternary complex (siRNA/PEI16/γ-PGA12 complex) exhibited a significant GAPDH knockdown effect. Thus, we developed a useful siRNA delivery system.

  12. Phase equilibria in the Zr-Si-B ternary system (Zr-Si-ZrB{sub 2} region) at 1 173 K

    Energy Technology Data Exchange (ETDEWEB)

    Han, Feng; Luo, Hao [Guangxi Univ., Nanning (China). College of Materials Science and Engineering; Guangxi Univ., Nanning (China). Guangxi Key Lab. of Processing for Non-ferrous Metal and Featured Materials; Zhan, Yongzhong [Guangxi Univ., Nanning (China). College of Materials Science and Engineering; Guangxi Univ., Nanning (China). Guangxi Key Lab. of Processing for Non-ferrous Metal and Featured Materials; Guangxi Univ., Nanning (China). Center of Ecological Collaborative Innovation for Aluminum Industry

    2017-10-15

    The isothermal section of the Zr-Si-B ternary system (Zr-Si-ZrB{sub 2} region) at 1 173 K has been experimentally determined. All equilibrated alloys were characterized via X-ray powder diffraction and scanning electron microscopy equipped with energy-dispersive X-ray analysis. A ternary phase Zr{sub 5}(Si{sub 0.86}B{sub 0.14}){sub 3} was found at 1 173 K. The experimental results show that the isothermal section consists of 11 single-phase regions, 26 two-phase regions and 13 three-phase regions. The existence of eight compounds, i.e. ZrSi{sub 2}, ZrSi, Zr{sub 5}Si{sub 4}, Zr{sub 3}Si{sub 2}, Zr{sub 2}Si, ZrB, ZrB{sub 2} and Zr{sub 5}(Si{sub 0.86}B{sub 0.14}){sub 3} in this system has been confirmed in the Zr-Si-ZrB{sub 2} region at 1 173 K.

  13. Study of physical, chemical and electronic properties of binaries and ternaries uranium compounds in the U-Si-B and U-Pt-Si systems

    International Nuclear Information System (INIS)

    Brisset, Nicolas

    2016-01-01

    Two main research axes were defined for this Ph-D work: (i) studying the effect of light elements (B, C) on the stability of U-Si compounds, and (ii) identifying and physically characterizing new phases in the U-Pt-Si system. Minor additions of carbon and boron in U-Si samples revealed that the formation of U 5 Si 4 would be correlated to the presence of these light elements, questioning its existence in the U-Si system. To evaluate the boron potential as a stimulant for non-metallic light elements of the second period (C, N, O), the isothermal section of the ternary phase diagram U-Si-B has been drawn at 927 C, disclosing solid equilibrium mainly between the UB and U-Si binary axes and the existence of the novel compound U 20 Si 16 B 3 , isostructural to the carbon equivalent one. These results suggest a specific behavior for a given light element on the U-Si phase relations. The isothermal section at 900 C of the U-Pt-Si ternary system was experimentally determined, leading to the discovery of 14 new phases, among which U 3 Pt 4 Si 6 , U 3 Pt 6 Si 4 and U 3 Pt 7 Si crystallized in their own structural type. As a prerequisite for this study, the phase relations in the U-Pt binary phase diagram were re-examined for the composition range 30 at.% and 70 at.% Pt, leading to a new assessment of the phase diagram which comprises the new U 3 Pt 4 compound. The temperature of the transformations has been measured by DTA. By coupling our experimental results to the literature data, a modeling of the phase diagram by the Calphad method was performed. Physical characterizations of the new U 3 Pt 4 compound revealed a moderate heavy fermion behavior, with ferromagnetic ordering below Tc = 7(1) K. As a side project, a study of the U 3 TGe 5 family with the anti-Hf 5 CuSn 3 structural type lead to the discovery of nine new compounds for T = V, Cr, Mn, Zr, Nb, Mo, Hf, Ta and W in addition to the previously reported U 3 TiGe 5 . Their magnetic and electronic properties were

  14. The Computerised Calculus in the Prognosis of the Phase Equilibrium Diagram of the Ternary System Al-Cu-Si

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    Florentina A. Cziple

    2006-10-01

    Full Text Available The paper presents a model for establishing the mathematical functions of the liquidus and solidus curves, from the binary diagrams Al-Si, Si-Cu, Cu-Al and their use in the prognosis of the phase equilibrium diagram from the ternary system Al-Cu-Si. We have studied the model of the non-ideal liquid solution of the regular type. The calculus and graphic plotting of the equations for the binary systems has been performed on the computer with the software programmes MathCad 2000 Professional, Statistica 5, Curve Expert, and for the ternary system Al-Cu-Si, with the 3D StudioMax software

  15. The ternary system nickel-boron-silicon

    International Nuclear Information System (INIS)

    Lugscheider, E.; Reimann, H.; Knotek, O.

    1975-01-01

    The ternary system Nickel-Boron-Silicon was established at 850 0 C by means of X-ray diffraction, metallographic and micro-hardness examinations. The well known binary nickel borides and silicides resp. were confirmed. In the boron-silicon system two binary phases, SiBsub(4-x) with x approximately 0.7 and SiB 6 were found the latter in equilibrium with the β-rhombohedral boron. Confirming the two ternary silicon borides a greater homogeneity range was found for Ni 6 Si 2 B, the phase Nisub(4,6)Si 2 B published by Uraz and Rundqvist can better be described by the formula Nisub(4.29)Si 2 Bsub(1.43). In relation to further investigations we measured melting temperatures in ternary Ni-10 B-Si alloys by differential thermoanalysis. (author)

  16. Experimental Investigation of Phase Equilibria in the Ho-Ti-Si Ternary System at 973 K (700 °C)

    Science.gov (United States)

    Han, Feng; Zhan, Yongzhong

    2018-02-01

    Phase equilibrium relations of the Ho-Ti-Si ternary system at 973 K (700 °C) were experimentally researched by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive spectrometer (EDS). The isothermal section of the system at 973 K (700 °C) consists of 14 three-phase regions, 27 two-phase regions, and 14 single-phase regions. The phases Ti5Si3, Ti5Si4, TiSi, TiSi2, Ho5Si3, Ho5Si4, HoSi, αHoSi2-b, and βHoSi2-a are proved to exist at 973 K (700 °C). Previously reported HoTiSi and Ho2Ti3Si4 ternary compounds were confirmed to exist at this temperature. The solubility of Ho in the intermediate phases (i.e., TiSi2, TiSi, Ti5Si4, and Ti5Si3) at the Ti-Si side is extremely small. The maximum solubilities of Ti in HoSi2-b, Ho5Si4, and Ho5Si3 are confirmed to be 8.0, 7.2, and 6.0 at. pct, respectively.

  17. Ternary nitrides for hydrogen storage: Li-B-N, Li-Al-N and Li-Ga-N systems

    International Nuclear Information System (INIS)

    Langmi, Henrietta W.; McGrady, G. Sean

    2008-01-01

    This paper reports an investigation of hydrogen storage performance of ternary nitrides based on lithium and the Group 13 elements boron, aluminum and gallium. These were prepared by ball milling Li 3 N together with the appropriate Group 13 nitride-BN, AlN or GaN. Powder X-ray diffraction of the products revealed that the ternary nitrides obtained are not the known Li 3 BN 2 , Li 3 AlN 2 and Li 3 GaN 2 phases. At 260 deg. C and 30 bar hydrogen pressure, the Li-Al-N ternary system initially absorbed 3.7 wt.% hydrogen, although this is not fully reversible. We observed, for the first time, hydrogen uptake by a pristine ternary nitride of Li and Al synthesized from the binary nitrides of the metals. While the Li-Ga-N ternary system also stored a significant amount of hydrogen, the storage capacity for the Li-B-N system was near zero. The hydrogenation reaction is believed to be similar to that of Li 3 N, and the enthalpies of hydrogen absorption for Li-Al-N and Li-Ga-N provide evidence that AlN and GaN, as well as the ball milling process, play a significant role in altering the thermodynamics of Li 3 N

  18. First-principles calculation of the structural and elastic properties of ternary metal nitrides TaxMo1-xN and TaxW1-xN

    Science.gov (United States)

    Bouamama, Kh.; Djemia, P.; Benhamida, M.

    2015-09-01

    First-principles pseudo-potentials calculations of the mixing enthalpy, of the lattice constants a0 and of the single-crystal elastic constants cij for ternary metal nitrides TaxMe1-xN (Me=Mo or W) alloys considering the cubic B1-rocksalt structure is carried out. For disordered ternary alloys, we employ the virtual crystal approximation VCA in which the alloy pseudopotentials are constructed within a first-principles VCA scheme. The supercell method SC is also used for ordered structures in order to evaluate clustering effects. We find that the mixing enthalpy still remains negative for TaxMe1-xN alloys in the whole composition range which implies these cubic TaxMo1-xN and TaxW1-xN ordered solid solutions are stable. We investigate the effect of Mo and W alloying on the trend of the mechanical properties of TaN. The effective shear elastic constant c44, the Cauchy pressure (c12-c44), and the shear to bulk modulus G/B ratio are used to discuss, respectively, the mechanical stability of the ternary structure and the brittle/ductile behavior in reference to TaN, MeN alloys. We determine the onset transition from the unstable structure to the stable one B1-rocksalt from the elastic stability criteria when alloying MeN with Ta. In a second stage, in the frame of anisotropic elasticity, we estimate by one homogenization method the averaged constants of the polycrystalline TaxMe1-xN alloys considering the special case of an isotropic medium with no crystallographic texture.

  19. Comparison between thermal annealing and ion mixing of alloyed Ni-W films on Si. I

    International Nuclear Information System (INIS)

    Pai, C.S.; Lau, S.S.; Poker, D.B.; Hung, L.S.

    1985-01-01

    The reactions between Ni-W alloys and Si substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by sputtering of Ni-W alloys, both Ni-rich and W-rich, onto the Si substrates, and followed by either furnace annealing (200--900 0 C) or ion mixing (2 x 10 15 -- 4 x 10 16 86 Kr + ions/cm 2 ). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). In general, thermal annealing and ion mixing lead to similar reactions. Phase separation between Ni and W with Ni silicides formed next to the Si substrate and W silicide formed on the surface was observed for both Ni-rich and W-rich samples under thermal annealing. Phase separation was also observed for Ni-rich samples under ion mixing; however, a Ni-W-Si ternary compound was possibly formed for ion-mixed W-rich samples. These reactions were rationalized in terms of the mobilities of various atoms and the energetics of the systems

  20. Irregular Homogeneity Domains in Ternary Intermetallic Systems

    Directory of Open Access Journals (Sweden)

    Jean-Marc Joubert

    2015-12-01

    Full Text Available Ternary intermetallic A–B–C systems sometimes have unexpected behaviors. The present paper examines situations in which there is a tendency to simultaneously form the compounds ABx, ACx and BCx with the same crystal structure. This causes irregular shapes of the phase homogeneity domains and, from a structural point of view, a complete reversal of site occupancies for the B atom when crossing the homogeneity domain. This work reviews previous studies done in the systems Fe–Nb–Zr, Hf–Mo–Re, Hf–Re–W, Mo–Re–Zr, Re–W–Zr, Cr–Mn–Si, Cr–Mo–Re, and Mo–Ni–Re, and involving the topologically close-packed Laves, χ and σ phases. These systems have been studied using ternary isothermal section determination, DFT calculations, site occupancy measurement using joint X-ray, and neutron diffraction Rietveld refinement. Conclusions are drawn concerning this phenomenon. The paper also reports new experimental or calculated data on Co–Cr–Re and Fe–Nb–Zr systems.

  1. Thermal stability of polyoxometalate compound of Keggin K8[2-SiW11O39]∙nH2O supported with SiO2

    Directory of Open Access Journals (Sweden)

    Yunita Sari M A

    2017-06-01

    Full Text Available Synthesis through sol-gel method and characterization of polyoxometalate compound of K8[b2-SiW11O39]∙nH2O supported with SiO2 have been done. The functional groups of polyoxometalate compound  was characterized by FT-IR spectrophotometer for the fungtional groups and the degree’s of crystalinity  using XRD. The acidity of K8[b2-SiW11O39]∙nH2O/SiO2 was determined qualitative analysis using ammonia and pyridine adsorption and the quantitative analysis using potentiometric titration method. The results of FT-IR spectrum of K8[b2-SiW11O39]∙nH2O appeared at  wavenumber 987.55 cm-1 (W=O, 864.11 cm-1 (W-Oe-W, 756.1 cm-1 (W-Oc-W, 3425.58 cm-1 (O-H, respectively and spectrum of  K8[b2-SiW11O39]SiO2 appeared at wavenumber  956.69 cm-1 (W=O, 864.11 cm-1 (W-Oe-W, 3448.72 cm-1 (O-H, respectively. The diffraction of XRD pattern of K8[b2-SiW11O39]∙nH2O and K8[b2-SiW11O39]∙nH2O/SiO2 compounds show high crystalinity. The acidic properties showed K8[b2-SiW11O39]∙nH2O/SiO2 more acidic compared to K8[b2-The SiW11O39]∙nH2O. The qualitative analysis showed pyridine compound adsorbed more of polyoxometalate compound of K8[b2-SiW11O39]∙nH2O/SiO2. Analysis of stability showed that the K8[b2-SiW11O39]∙nH2O/SiO2 at temperature 500°C has structural changes compare to 200-400oC which was indicated from vibration at wavenumber 800-1000 cm-1. Keywords : K8[b2-SiW11O39]∙nH2O, polyoxometalate, SiO2.

  2. Comparison between thermal annealing and ion mixing of multilayered Ni-W films on Si. II

    International Nuclear Information System (INIS)

    Pai, C.S.; Lau, S.S.; Poker, D.B.; Hung, L.S.

    1985-01-01

    The reactions between bilayered Ni/W films and Si substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by electron-beam sequential deposition of Ni and W onto the Si substrates and following by either furnace annealing (approx. 200--900 0 C) or ion mixing (approx. 2 x 10 15 -- 4 x 10 16 86 Kr + ions/cm 2 ). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). Thermal annealing of both W/Ni/Si and Ni/W/Si samples led to the formation of Ni silicide next to the Si substrate and W silicide on the sample surface (layer reversal between Ni and W in the Ni/W/Si case). Ion mixing of W/Ni/Si samples led to the formation of Ni silicide with a thin layer of Ni-W-Si mixture located at the sample surface. For Ni/W/Si samples a ternary amorphous mixture of Ni-W-Si was obtained with ion mixing. These reactions were rationalized in terms of the mobilities of various atoms and the intermixings between layers

  3. Ternary complexes of folate-PEG-appended dendrimer (G4)/α-cyclodextrin conjugate, siRNA and low-molecular-weight polysaccharide sacran as a novel tumor-selective siRNA delivery system.

    Science.gov (United States)

    Ohyama, Ayumu; Higashi, Taishi; Motoyama, Keiichi; Arima, Hidetoshi

    2017-06-01

    We previously developed a tumor-selective siRNA carrier by preparing polyamidoamine dendrimer (generation 4, G4) conjugates with α-cyclodextrin and folate-polyethylene glycol (Fol-PαC (G4)). In the present study, we developed ternary complexes of Fol-PαC (G4)/siRNA with low-molecular-weight-sacrans to achieve more effective siRNA transfer activity. Among the different molecular-weight sacrans, i.e. sacran 100, 1000 and 10,000 (MW 44,889Da, 943,692Da and 1,488,281Da, respectively), sacran 100 significantly increased the cellular uptake and the RNAi effects of Fol-PαC (G4)/siRNA binary complex with negligible cytotoxicity in KB cells (folate receptor-α positive cells). In addition, the ζ-potential and particle size of Fol-PαC (G4)/siRNA complex were decreased by the ternary complexation with sacran 100. Importantly, the in vivo RNAi effect of the ternary complex after the intravenous administration to tumor-bearing BALB/c mice was significantly higher than that of the binary complex. In conclusion, Fol-PαC (G4)/siRNA/sacran 100 ternary complex has a potential as a novel tumor-selective siRNA delivery system. Copyright © 2017 Elsevier B.V. All rights reserved.

  4. Characterization of carbon, nitrogen, oxygen and refractory metals in binary and ternary silicon-based films using ion beam methods

    International Nuclear Information System (INIS)

    Somatri-Bouamrane, R.

    1996-01-01

    Ion beam methods (non Rutherford backscattering, nuclear reactions) have been carried out in order to characterize silicon-based films. The cross sections for the reactions 12 C(α,α), 14 N(α,α), 16 O(α,α), 28 Si(α,α) and 14 N(α,p) have been measured within 2 and 7 MeV. CVD beta SiC films could be analyzed and the interface between silicon carbide and the (100) silicon substrate was studied. The epitaxial growth of the beta SiC film could be modelled by comparing the results obtained with ion beam analysis, infrared spectroscopy and electron microscopy. Moreover, the stoichiometry of low pressure CVD Me-Si-N (Me=Re, W, Ti, Ta) ternary systems was studied. The evolution of the nitrogen content in W-Si-N systems allowed to study their stability with respect to the annealing conditions. (N.T.)

  5. In vitro and in vivo siRNA delivery to hepatocyte utilizing ternary complexation of lactosylated dendrimer/cyclodextrin conjugates, siRNA and low-molecular-weight sacran.

    Science.gov (United States)

    Hayashi, Yuya; Higashi, Taishi; Motoyama, Keiichi; Jono, Hirofumi; Ando, Yukio; Arima, Hidetoshi

    2018-02-01

    In this study, we newly developed the ternary complexes consisting of lactosylated dendrimer (generation 3)/α-cyclodextrin conjugate (Lac-α-CDE), siRNA and the anionic polysaccharide sacrans, and evaluated their utility as siRNA transfer carriers. Three kinds of the low-molecular-weight sacrans, i.e. sacran (100) (Mw 44,889Da), sacran (1000) (Mw 943,692Da) and sacran (10,000) (Mw 1,488,281Da) were used. Lac-α-CDE/siRNA/sacran ternary complexes were prepared by adding the low-molecular-weight sacrans to the Lac-α-CDE/siRNA binary complex solution. Cellular uptake of the ternary complex with sacran (100) was higher than that of the binary complex or the other ternary complexes with sacran (1000) and sacran (10,000) in HepG2 cells. Additionally, the ternary complex possessed high serum resistance and endosomal escaping ability in HepG2 cells. High liver levels of siRNA and Lac-α-CDE were observed after the intravenous administration of the ternary complex rather than that of the binary complex. Moreover, intravenous administration of the ternary complex (siRNA 5mg/kg) induced the significant RNAi effect in the liver of mice with negligible change of blood chemistry values. Therefore, a ternary complexation of the Lac-α-CDE/siRNA binary complex with sacran is useful as a hepatocyte-specific siRNA delivery system. Copyright © 2017 Elsevier B.V. All rights reserved.

  6. Ternary diffusion in Cu-rich fcc Cu–Al–Si alloys at 1073 K

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Dandan [School of Materials Science and Engineering, Central South University, Changsha, Hunan 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China); Zhang, Lijun [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China); Du, Yong, E-mail: yongducalphad@gmail.com [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China); Xu, Honghui [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China); Jin, Zhanpeng [School of Materials Science and Engineering, Central South University, Changsha, Hunan 410083 (China)

    2013-07-25

    Highlights: •Interdiffusivities in Cu-rich fcc Cu–Al–Si alloys at 1073 K were determined. •The present results were compared with experimental data in boundary binary systems. •The present results were validated by thermodynamic constraints and Fick’s law. •The sign of ternary cross diffusivities was predicted in terms of thermodynamics. -- Abstract: Utilizing six groups of bulk diffusion couples and with electron probe microanalysis technique, the composition dependence of ternary interdiffusion coefficients in Cu-rich fcc Cu–Al–Si alloys at 1073 K were determined by the Matano-Kirkaldy method. Using a three-dimensional representation, the obtained main ternary diffusion coefficients were found to be consistent with the experimental data in boundary binaries available in the literature. The reliability of the obtained interdiffusivities was further validated by thermodynamic constraints as well as by Fick’s second law applied to numerical simulation. The sign of the ternary cross diffusivities in fcc Cu–Al–Si alloys, which shows a noticeable effect on microstructure, was also successfully predicted in terms of thermodynamics.

  7. Ternary diffusion in Cu-rich fcc Cu–Al–Si alloys at 1073 K

    International Nuclear Information System (INIS)

    Liu, Dandan; Zhang, Lijun; Du, Yong; Xu, Honghui; Jin, Zhanpeng

    2013-01-01

    Highlights: •Interdiffusivities in Cu-rich fcc Cu–Al–Si alloys at 1073 K were determined. •The present results were compared with experimental data in boundary binary systems. •The present results were validated by thermodynamic constraints and Fick’s law. •The sign of ternary cross diffusivities was predicted in terms of thermodynamics. -- Abstract: Utilizing six groups of bulk diffusion couples and with electron probe microanalysis technique, the composition dependence of ternary interdiffusion coefficients in Cu-rich fcc Cu–Al–Si alloys at 1073 K were determined by the Matano-Kirkaldy method. Using a three-dimensional representation, the obtained main ternary diffusion coefficients were found to be consistent with the experimental data in boundary binaries available in the literature. The reliability of the obtained interdiffusivities was further validated by thermodynamic constraints as well as by Fick’s second law applied to numerical simulation. The sign of the ternary cross diffusivities in fcc Cu–Al–Si alloys, which shows a noticeable effect on microstructure, was also successfully predicted in terms of thermodynamics

  8. The novel eutectic microstructures of Si-Mn-P ternary alloy

    International Nuclear Information System (INIS)

    Wu Yaping; Liu Xiangfa

    2010-01-01

    The microstructures of Si-Mn-P alloy manufactured by the technique of combining phosphorus transportation and alloy melting were investigated using electron probe micro-analyzer (EPMA). The phase compositions were determined by energy spectrum and the varieties of eutectic morphologies were discussed. It is found that there is no ternary compound but Si, MnP and MnSi 1.75-x could appear when the Si-Mn-P alloy's composition is proper. Microstructure is greatly refined by rapid solidification technique and the amount of eutectic phases change with faster cooling rates. Moreover, primary Si or MnP are surrounded firstly by the binary eutectic (Si + MnP) and then the ternary eutectic (Si + MnSi 1.75-x + MnP) which also exhibit binary structures due to divorced eutectic determined by the particularity of some Si-Mn-P alloys.

  9. Ternary scandium and transition metals germanides

    International Nuclear Information System (INIS)

    Kotur, B.Ya.

    1992-01-01

    Brief review of data on phase diagram of ternary Sc-Me-Ge systems (Me-d - , f-transition element) is given. Isothermal sections at 870 and 1070 K of 17 ternary systems are plotted. Compositions and their structural characteristics are presented. Variability of crystal structure is typical for ternary scandium germanides: 70 compounds with the studied structure belong to 23 structural types. Ternary germanides isostructural to types of Sm 4 Ge 4 , ZrCrSi 2 , ZrNiAl, ScCeSi, TiNiSi U 4 Re 7 Si 6 145 compounds from 70 under investigation are mostly formed in studied systems

  10. Quantitative analysis of crystalline and remaining glass phases in CaO-B2O3-SiO2 ternary system glass ceramics

    International Nuclear Information System (INIS)

    He Ming; Wu Mengqiang; Zhang Shuren; Zhou Xiaohua; Zhang Ting; Chen Song

    2010-01-01

    Research highlights: → As for CBS ternary system glass ceramics, due to the complex phase compositions, many methods could be difficult to determine quantitatively the absolute amounts of crystalline and remaining oxides. In this study, an available method based on the Rietveld method was used to quantitatively analyze the relative weight fraction and densities of crystalline phases. These above data are used to obtain a table of both relative weight fraction of crystalline phases and densities of all phases including CBS LTCC. Using volume additivity rule, it is possible to analysis quantitatively the absolute weight fraction of crystalline phases and also the oxides molar content in the remaining glass. - Abstract: Based on Rietveld method of X-ray techniques and volume additivity rule, a new method was developed to quantitatively analyze the phase composition of CaO-B 2 O 3 -SiO 2 ternary system glass ceramics. Lattice parameters, densities and relative weight fractions of crystalline phases in CaO-B 2 O 3 -SiO 2 ternary system were obtained by X-ray diffraction (XRD) refinement. According to the relative weight fraction of crystalline phases and densities of various components, the volume additivity rule was revealed by calculating the absolute weight fraction of crystalline phases of CaO-B 2 O 3 -SiO 2 glass ceramics. In addition, molar contents of the oxides in the remaining glass can also be determined by this method. Comparing this method with internal standard method, it is found that the maximum deviations of the crystallinity and the absolute weight fraction of crystalline phases are less than 2.6% and 2.9%, respectively. As a result, quantitative evaluation of CaO-B 2 O 3 -SiO 2 ternary system glass ceramics can be achieved using this method.

  11. Fracture behavior of reaction layers in W and SiC joint system

    International Nuclear Information System (INIS)

    Son, S.J.; Kohyama, A.; Yu, I.K.; Cho, S.

    2007-01-01

    Full text of publication follows: SiC and SiC/SiC composites are considering as attractive structural materials for fusion reactors, because of their excellent physical, chemical and nuclear properties in fusion environments. For the application of these materials to gas-cooled fusion blanket systems, they have to satisfy specific requirements, such as hermeticity and surface features, in addition to baseline thermo-mechanical and irradiation properties. One of the critical issues for a fusion technology is a plasma facing material, which is considered in the connection with joining, heat transfer control and protection from helium gas in high temperature components. Tungsten as a coating material for SiC-based plasma-facing components has excellent advantages, such as a small mismatch in coefficient of thermal expansion, a very low sputtering yield, inherent heat resistance and high thermal conductivity. Therefore, tungsten and its alloys are promising as potential coating materials for divertor and first wall applications. In the present work, by using micron-sized tungsten and nano-SiC powders, W-SiC joints were prepared by simultaneous and sequential hot-pressing process. Various reaction products in the tungsten-SiC system were revealed by microstructural analyses. The interfacial phases and thickness were strongly depended on the temperature and time of hot pressing. The fracture characteristics of the reaction layers determine the robustness of W/SiC systems. Therefore, in this work, fracture behaviors by analyzing the indentation induced cracks in each phase and mechanical properties of W/SiC joints were examined. The most high shear strength was obtained in the joints fabricated at the conditions of 1780 deg. C, 20 MPa, 1 hr holding time. Easy crack extension was confirmed in the region of WC phase. The fracture of 1870 deg. C fabrication samples, which showed comparatively low shear strength, occurred at the wide region of reaction phases (WC+W 5 Si 3 +W

  12. The effect of the head group on branched-alkyl chain surfactants in glycolipid/n-octane/water ternary system.

    Science.gov (United States)

    Nainggolan, Irwana; Radiman, Shahidan; Hamzah, Ahmad Sazali; Hashim, Rauzah

    2009-10-01

    Two novel glycolipids have been synthesized and their phase behaviour studied. They have been characterized using FT-IR, FAB and 13C NMR and 1H NMR to ensure the purity of novel glycolipids. The two glycolipids are distinguished based on the head group of glycolipids (monosaccharide/glucose and disaccharide/maltose). These two novel glycolipids have been used as surfactant to perform two phase diagrams. Phase behaviours that have been investigated are 2-hexyldecyl-beta-D-glucopyranoside (2-HDG)/n-octane/water ternary system and 2-hexyldecyl-beta-D-maltoside (2-HDM)/n-octane/water ternary system. SAXS and polarizing optical microscope have been used to study the phase behaviours of these two surfactants in ternary phase diagram. Study of effect of the head group on branched-alkyl chain surfactants in ternary system is a strategy to derive the structure-property relationship. For comparison, 2-HDM and 2-HDG have been used as surfactant in the same ternary system. The phase diagram of 2-hexyldecyl-beta-D-maltoside/n-octane/water ternary system exhibited a Lalpha phase at a higher concentration regime, followed with two phases and a micellar solution region in a lower concentration regime. The phase diagram of 2-HDG/water/n-octane ternary system shows hexagonal phase, cubic phase, rectangular ribbon phase, lamellar phase, cubic phase as the surfactant concentration increase.

  13. Volume dependence of T/sub c/ of Ternary A-15 Phases

    International Nuclear Information System (INIS)

    Shamrai, V.

    1984-01-01

    Results are presented of measurements of the superconducting transition temperature T/sub c/, lattice constant a, magnetic susceptibility /sub chi/, and critical field H/sub c/ 2 for many Nb 3 Al and V 3 Si-based ternary phases and Nb 3 SnH/sub x/. For V 3 Si-based ternary systems and Nb 3 SnH/sub x/ the density of states at the Fermi level N(epsilon/sub F/) sharply decreases with the concentration of the alloying element. The variation of N(epsilon/sub F/) in these ternary systems cannot be explained by the variation of a. In ternary phases Nb 3 (Al/sub 1-x/dY/sub x/), where Y can be Ge, Ga, Sb, or Se, a quite clear correlation is revealed between T/sub c/ and a. The dependence of T/sub c/ on V in these systems is due to the variation of the matrix element of the electron-phonon interaction 2 >

  14. kW-level commercial Yb-doped aluminophosphosilicate ternary laser fiber

    Science.gov (United States)

    Sun, Shihao; Zhan, Huan; Li, Yuwei; Liu, Shuang; Jiang, Jiali; Peng, Kun; Wang, Yuying; Ni, Li; Wang, Xiaolong; Jiang, Lei; Yu, Juan; Liu, Gang; Lu, Pengfei; Wang, Jianjun; Jing, Feng; Lin, Aoxiang

    2018-03-01

    Based on a master oscillator power amplifier configuration, laser performance of commercial Nufern-20/400-8M Ybdoped aluminophosphosilicate ternary laser fiber was investigated. Pumped by 976 nm laser diodes, 982 W laser output power was obtained with a slope efficiency of 84.9%. Spectrum of output was centered at 1066.56nm with 3dB bandwidth less than 0.32 nm, and the nonlinearity suppression ratio was more than 39dB. Beam quality of Mx2 and M2y were 1.55 and 1.75 at 982 W, respectively. The laser performance indicated that Nufern-20/400-8M Yb-doped aluminophosphosilicate ternary laser fiber is highly competitive for industry fiber laser use.

  15. Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer on Ge

    Science.gov (United States)

    Suzuki, Akihiro; Nakatsuka, Osamu; Sakashita, Mitsuo; Zaima, Shigeaki

    2018-06-01

    The impact of a silicon germanium tin (Si x Ge1‑ x ‑ y Sn y ) ternary alloy interlayer on the Schottky barrier height (SBH) of metal/Ge contacts with various metal work functions has been investigated. Lattice matching at the Si x Ge1‑ x ‑ y Sn y /Ge heterointerface is a key factor for controlling Fermi level pinning (FLP) at the metal/Ge interface. The Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer having a small lattice mismatch with the Ge substrate can alleviate FLP at the metal/Ge interface significantly. A Si0.11Ge0.86Sn0.03 interlayer increases the slope parameter for the work function dependence of the SBH to 0.4. An ohmic behavior with an SBH below 0.15 eV can be obtained with Zr and Al/Si0.11Ge0.86Sn0.03/n-Ge contacts at room temperature.

  16. Keggin type polyoxometalate H4[αSiW12O40].nH2O as intercalant for hydrotalcite

    Directory of Open Access Journals (Sweden)

    Neza Rahayu Palapa

    2017-06-01

    Full Text Available The synthesis of hydrotalcite and polyoxometalate H4[αSiW12O40].nH2O with the ratio (2:1, (1:1, (1:2 and (1:3 has been done. The product of intercalation was characterized using FT-IR spectrophotometer, XRD, and TG-DTA. Polyoxometalate H4[αSiW12O40].nH2O intercalated layered double hydroxide was optimised to use as adsorbent Congo red dye. Characterization using FT-IR was not showing the optimal insertion process. The result using XRD characterization was showed successful of polyoxometalate H4[αSiW12O40].nH2O inserted layered double hydroxide with a ratio (1:1 which the basal spacing was expanded from 7,8 Ȧ to 9,81 Ȧ. Furthermore, the thermal analysis was performed using TG-DTA. The result show that the decomposition of polyoxometalate H4[αSiW12O40].nH2O intercalated  hydrotalcite with ratio (1:1 was occured at 80oC to 400oC with a loss of OH in the layer at 150oC to 220oC, and then the decomposition of the compound polyoxometalate H4[αSiW12O40].nH2O at 350oC to 420oC. Keywords: Hydrotalcite, Layered Double Hydroxide, Polyoxometalate, Intercalation

  17. Search for new ternary Al, Ga or In containing phases using information forecasting system

    International Nuclear Information System (INIS)

    Kiseleva, N.N.; Burkhanov, G.S.

    1989-01-01

    Automated system of search for regularities in the formation of crystal phases and forecasting of new compounds with required properties, comprising data base on the properties of ternary inorganic compounds and cybernetic forecasting system, has been developed. General principles of operation of the developed information-forecasting system are considered. Efficiency of the system operation is shown, using as an example the search for new ternary compounds with aluminium, gallium and indium, crystallized in ZrNiAl, TiNiSi, ThCr 2 Si 2 , CaAl 2 Si 2 structural types. Results of the above-mentioned phases forecasting are shown

  18. Excess molar volumes of the ternary system {methylcyclohexane (1)+cyclohexane (2)+n-alkanes (3)} at T=298.15 K

    International Nuclear Information System (INIS)

    Iloukhani, Hossein; Rezaei-Sameti, Mahdi

    2005-01-01

    Densities were experimentally determined in the whole range of composition at T=298.15 K for the ternary system {methylcyclohexane (1)+cyclohexane (2)+n-alkanes (3)} and for the seven corresponding binary systems. The n-alkanes include n-hexane, n-heptane, and n-octane. Excess molar volumes, V E , were calculated for the binaries and ternaries systems. The V 123 E data are positive over the entire range of composition for the systems {methylcyclohexane (1)+cyclohexane (2)+n-heptane (3) or n-octane (3)} at three fixed compositions (f m =X 1 /X 2 ). For the system {methylcyclohexane (1)+cyclohexane (2)+n-hexane (3)}, the V E values showed positive for f m =0.3 and negative for f m =3. The V E data exhibit, an inversion in sign in the mixture containing f m =1 for later ternary system. Several empirical expressions are used to predict and correlate the ternary excess molar volumes from experimental results on the constituted binaries and analyzed to gain insight about liquid mixture interactions

  19. Phase composition and saturated liquid properties in binary and ternary systems containing carbon dioxide, n-decane, and n-tetradecane

    International Nuclear Information System (INIS)

    Kariznovi, Mohammad; Nourozieh, Hossein; Abedi, Jalal

    2013-01-01

    Highlights: ► Binary and ternary systems of (carbon dioxide + n-decane + n-tetradecane) at 323.2 K. ► Isothermal phase properties measurements over wide range of pressure (1 to 6) MPa. ► Experimental measurements, density, viscosity, and composition, using a designed PVT apparatus. ► The experimental data were correlated using two equations of state. ► The interaction parameters and the volume shift values from the experimental data on the binary pairs. - Abstract: Experimental phase equilibrium data have been measured for the binary and ternary systems containing (carbon dioxide, n-decane, and n-tetradecane) at 323.2 K over the pressure range (1 to 6) MPa using a designed PVT apparatus. The measurements presented in this paper were undertaken to determine liquid phase composition and liquid saturated properties (density and viscosity) when a liquid hydrocarbon (n-decane, n-tetradecane, and their mixtures) was saturated with carbon dioxide. The generated data for compositions and densities were correlated with the Soave–Redlich–Kwong (SRK) and Peng–Robinson (PR) equations of state (EOS). The adjustment of binary interaction parameters and volume translation technique has been employed to correlate the experimental compositions and densities. The adjusted binary parameters from the data of binary pairs (carbon dioxide + n-decane) and (carbon dioxide + n-tetradecane) were used to correlate the generated ternary data. The calculated ternary compositions were found to be in good agreement with the experimental data using the binary parameters from the data of binary pairs for both EOSs. The results for the density of saturated liquid phase indicated that the volume translation should be applied to all components in the binary and ternary systems to describe accurately the saturated liquid densities for mixtures.

  20. Ternary alloying study of MoSi2

    International Nuclear Information System (INIS)

    Yi, D.; Li, C.; Akselsen, O.M.; Ulvensoen, J.H.

    1998-01-01

    Ternary alloying of MoSi 2 with adding a series of transition elements was investigated by X-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy (TEM), and energy dispersive spectroscopy (EDS). Iron, Co, Ni, Cr, V, Ti, and Nb were chosen as alloying elements according to the AB 2 structure map or the atomic size factor. The studied MoSi 2 base alloys were prepared by the arc melting process from high-purity metals. The EDS analysis showed that Fe, Co, and Ni have no solid solubility in as-cast MoSi 2 , while Cr, V, Ti, and Nb exhibit limited solid solubilities, which were determined to be 1.4 ± 0.7, 1.4 ± 0.4, 0.4 ± 0.1, and 0.8 ± 0.1. Microstructural characterization indicated that Mo-Si-M VIII (M VIII = Fe, Co, Ni) and Mo-Si-Cr alloys have a two-phase as-cast microstructure, i.e., MoSi 2 matrix and the second-phase FeSi 2 , CoSi, NiSi 2 , and CrSi 2 , respectively. In as-cast Mo-Si-V, Mo-Si-Ti, and Mo-Si-Nb alloys, besides MoSi 2 and C40 phases, the third phases were observed, which have been identified to be (Mo, V) 5 Si 3 , TiSi 2 , and (Mo, Nb) 5 Si 3

  1. (Vapour + liquid) equilibria in the ternary system (acetonitrile + n-propanol + ethylene glycol) and corresponding binary systems at 101.3 kPa

    International Nuclear Information System (INIS)

    Qian, Guo-fei; Liu, Wen; Wang, Li-tao; Wang, Dao-cai; Song, Hang

    2013-01-01

    Highlights: • We adopted a new extractive solvent “ethylene glycol” to separate the mixture. • We measured the VLE data of binary system n-propanol + ethylene glycol. • We reinforce the VLE data of binary system acetonitrile + ethylene glycol. • We predicted the VLE data for the ternary system successfully. -- Abstract: Experimental isobaric (Vapour + liquid) equilibrium (VLE) data at 101.3 kPa were determined for three binary systems, viz. {acetonitrile (1) + n-propanol (2)}, {acetonitrile (1) + ethylene glycol (3)} and {n-propanol (2) + ethylene glycol (3)} and for one ternary system {acetonitrile (1) + n-propanol (2) + ethylene glycol (3)}. The measurements were performed using an improved Rose equilibrium still. The VLE data of the binary systems passed thermodynamic consistency tests and were correlated by Wilson and NRTL models. Good results were achieved. The phase behaviour of the ternary system was predicted directly by the parameters of two models obtained from the experimental binary results. The results showed an excellent agreement with experimental values

  2. Ternary systems

    International Nuclear Information System (INIS)

    Kagan, D.N.; Hubberstey, P.; Barker, M.G.

    1985-01-01

    The paper reviews the experimental and theoretical studies carried out on multicomponent alkali metal systems. Solid-liquid phase equilibria studies are mainly concerned with the systems Na-K-Rb and Na-K-Cs, and data on the liquidus temperatures in these systems are presented. The thermodynamic properties of the ternary Na-K-Cs eutectic system have been determined experimentally, and the enthalpy, heat capacity and excess functions of the alloy are given. An analysis of calculational methods used in determining thermodynamic functions of ternary liquid metals systems is described. Finally, data are tabulated for the density, compressibility, saturated vapour pressure, viscosity and thermal conductivity of the ternary Na-K-Cs eutectic system. (UK)

  3. Effect of ternary alloying elements on microstructure and mechanical property of Nb-Si based refractory intermetallic alloy

    International Nuclear Information System (INIS)

    Kim, W.Y.; Kim, H.S.; Kim, S.K.; Ra, T.Y.; Kim, M.S.

    2005-01-01

    Microstructure and mechanical property at room temperature and at 1773 K of Nb-Si based refractory intermetallic alloys were investigated in terms of compression and fracture toughness test. Mo and V were chosen as ternary alloying elements because of their high melting points, atomic sizes smaller than Nb. Both ternary alloying elements were found to have a significant role in modifying the microstructure from dispersed structure to eutectic-like structure in Nb solid solution/Nb 5 Si 3 intermetallic composites. The 0.2% offset yield strength at room temperature increased with increasing content of ternary elements in Nb solid solution and volume fraction of Nb 5 Si 3 . At 1773 K, Mo addition has a positive role in increasing the yield strength. On the other hand, V addition has a role in decreasing the yield strength. The fracture toughness of ternary alloys was superior to binary alloys. Details will be discussed in correlation with ternary alloying, volume fraction of constituent phase, and the microstructure. (orig.)

  4. X-ray absorption near-edge structure of hexagonal ternary phases in sputter-deposited TiAlN films

    Energy Technology Data Exchange (ETDEWEB)

    Gago, R., E-mail: rgago@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Soldera, F. [Department of Materials Science and Engineering, Saarland University, D-66123 Saarbruecken (Germany); Hübner, R.; Lehmann, J.; Munnik, F. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01314 Dresden (Germany); Vázquez, L. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Redondo-Cubero, A. [Instituto Tecnológico e Nuclear, Instituto Superior Técnico, Universidade Técnica de Lisboa, 2686-953 Sacavém (Portugal); Endrino, J.L. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Abengoa Research S.L., c/Energía Solar 1, Palmas Altas, E-41014 Seville (Spain)

    2013-06-05

    Highlights: ► Growth of ternary TiAlN films with nearly single-phase wurzite structure. ► Soft X-rays XANES measurements of ternary TiAlN films with wurzite structure. ► Identification of ternary TiAlN hexagonal phases by XANES. ► Correlation of XANES measurements with reported theoretical calculations. -- Abstract: Titanium aluminium nitride (TiAlN) coatings have been grown by reactive (Ar/N{sub 2}) direct-current magnetron sputtering from a Ti{sub 50}Al{sub 50} compound target. The film composition has been quantified by ion beam analysis showing the formation of Al-rich nitrides (Ti/Al ∼ 0.3), with stoichiometric films for N{sub 2} contents in the gas mixture equal or above ∼25%. The surface morphology of the films has been imaged by atomic force microscopy, showing very smooth surfaces with roughness values below 2 nm. X-ray and electron diffraction patterns reveal that the films are nanocrystalline with a wurzite (w) structure of lattice parameters larger (∼2.5%) than those for w-AlN. The lattice expansion correlates with the Ti/Al ratio in stoichiometric films, which suggests the incorporation of Ti into w-AlN. The atomic environments around Ti, Al and N sites have been extracted from the X-ray absorption near-edge structure (XANES) by recording the Ti2p, Al1s and N1s edges, respectively. The analysis of the XANES spectral lineshape and comparison with reported theoretical calculations confirm the formation of a ternary hexagonal phase.

  5. Metastable nanocrystalline carbides in chemically synthesized W-Co-C ternary alloys

    International Nuclear Information System (INIS)

    McCandlish, L.E.; Kear, B.H.; Kim, B.K.; Wu, L.W.

    1989-01-01

    Nanophase materials can be prepared either by physical methods or chemical methods. Physical methods include thermal evaporation, sputtering and melt quenching, whereas chemical methods include glow-discharge decomposition, chemical vapor deposition, sol-gel dehydration and gas-solid reaction. Recently, the authors have used controlled activity gas-solid reactions to prepare nanophase WC-Co cermet powders at different WC loadings. In the process they have discovered some new metastable phases in the W-Co-C ternary system at temperatures below 1000 degrees C

  6. Characterization of carbon, nitrogen, oxygen and refractory metals in binary and ternary silicon-based films using ion beam methods; Caracterisation des elements: carbone, azote, oxygene et metal refractaire dans des depots binaires et ternaires a base de silicium par methodes d'analyse utilisant les faisceaux d'ions

    Energy Technology Data Exchange (ETDEWEB)

    Somatri-Bouamrane, R. [Lyon-1 Univ., 69 - Villeurbanne (France). Inst. de Physique Nucleaire]|[Universite Claude Bernard, 69 - Lyon (France)

    1996-12-19

    Ion beam methods (non Rutherford backscattering, nuclear reactions) have been carried out in order to characterize silicon-based films. The cross sections for the reactions {sup 12}C({alpha},{alpha}), {sup 14}N({alpha},{alpha}), {sup 16}O({alpha},{alpha}), {sup 28}Si({alpha},{alpha}) and {sup 14}N({alpha},p) have been measured within 2 and 7 MeV. CVD beta SiC films could be analyzed and the interface between silicon carbide and the (100) silicon substrate was studied. The epitaxial growth of the beta SiC film could be modelled by comparing the results obtained with ion beam analysis, infrared spectroscopy and electron microscopy. Moreover, the stoichiometry of low pressure CVD Me-Si-N (Me=Re, W, Ti, Ta) ternary systems was studied. The evolution of the nitrogen content in W-Si-N systems allowed to study their stability with respect to the annealing conditions. (N.T.)

  7. Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation

    International Nuclear Information System (INIS)

    Ee, Y.C.; Chen, Z.; Law, S.B.; Xu, S.; Yakovlev, N.L.; Lai, M.Y.

    2006-01-01

    Ternary Ti-Si-N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into Ti x Si y substrate. This leads to the formation of Ti-N and Si-N compounds in the ternary film. Diffusion of copper in the barrier layer after annealing treatment at various temperatures was investigated using time-of-flight secondary ion mass spectrometer (ToF-SIMS) depth profiling, X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and sheet resistance measurement. The current study found that barrier failure did not occur until 650 deg. C annealing for 30 min. The failure occurs by the diffusion of copper into the Ti-Si-N film to form Cu-Ti and Cu-N compounds. FESEM surface morphology and EDX show that copper compounds were formed on the ridge areas of the Ti-Si-N film. The sheet resistance verifies the diffusion of Cu into the Ti-Si-N film; there is a sudden drop in the resistance with Cu compound formation. This finding provides a simple and effective method of monitoring Cu diffusion in TiN-based diffusion barriers

  8. Superconductivity in the ternary rare-earth (Y, La, and Lu) compounds RPd2Si2 and RRh2Si2

    NARCIS (Netherlands)

    Palstra, T.T.M.; Lu, G.; Menovsky, A.A.; Nieuwenhuys, G.J.; Kes, P.H.; Mydosh, J.A.

    1986-01-01

    We have investigated the superconducting and metallurgical properties of the ternary compounds RPd2Si2 and RRh2Si2 with R = Y, La, and Lu. All RPd2Si2 compounds and LaRh2Si2 were found to be type-I superconductors below 1 K. A detailed metallurgical analysis shows that segregation of second phases

  9. Effect of ternary additions on the oxidation resistance of Ti5Si3

    International Nuclear Information System (INIS)

    Thom, A.J.; Akinc, M.; Iowa State Univ., Ames, IA

    1995-01-01

    Refractory intermetallic silicides are receiving increasing consideration for use as high temperature structural materials. Ti 5 Si 3 -based compositions are attractive due to their ability to incorporate a variety of interstitial ternary additions. These ternary additions present a unique opportunity to potentially tailor physical properties. Previous experimental work has shown that these additions significantly increase the otherwise poor oxidation resistance of undoped Ti 5 Si 3 above 700 C. Recent experimental work by the authors on the oxidation of small atom doped Ti 5 Si 3 is discussed. Interstitial additions of boron, carbon, and oxygen substantially improve the isothermal oxidation resistance of Ti 5 Si 3 at 1,000 C. In contrast, added nitrogen does not provide significant improvement. Even up to 1,306 C, interstitial oxygen imparts excellent oxidation resistance with a mass gain of 1.1 mg/cm 2 after 240 hours

  10. Measurement and calculation of solid–liquid equilibrium for ternary systems of 3,4-dichloronitrobenzene + 2,3-dichloronitrobenzene + ethanol/n-propanol

    International Nuclear Information System (INIS)

    Li, Rongrong; Han, Shuo; Du, Cunbin; Meng, Long; Wang, Jian; Zhao, Hongkun

    2016-01-01

    Highlights: • Solid–liquid-phase equilibrium for two ternary systems was determined. • Six ternary phase diagrams were constructed for the two ternary systems. • The ternary phase diagrams were calculated by NRTL model. - Abstract: The stable (solid + liquid) phase equilibrium in ternary systems of 3,4-dichloronitrobenzene + 2,3-dichloronitrobenzene + ethanol and 3,4-dichloronitrobenzene + 2,3-dichloronitrobenzene + n-propanol at three temperatures was determined by means of an isothermal solution saturation method under pressure p = 101.2 kPa. The isothermal phase diagrams of the two ternary systems were plotted on the basis of the experimental mutual solubility data. The equilibrium solids formed in the two systems were identified by Schreinemakers’ method of wet residues. It was found that each phase diagram included one co-saturated point, two co-saturated curves and three crystallization zones in the ternary systems of 3,4-dichloronitrobenzene + 2,3-dichloronitrobenzene + ethanol and 3,4-dichloronitrobenzene + 2,3-dichloronitrobenzene + n-propanol. Two pure solid phases were formed in the studied systems, which were pure 2,3-dichloronitrobenzene and pure 3,4-dichloronitrobenzene. The crystallization zone of 3,4-dichloronitrobenzene was smaller than that of 2,3-dichloronitrobenzene at a given temperature, which showed that 2,3-dichloronitrobenzene could be easily separated from the solution. Furthermore, the solid–liquid phase diagrams were calculated by using NRTL model. The calculated phase diagrams agreed well with the experimental ones. Knowledge of (solid + liquid) phase equilibrium and ternary phase diagrams would be very valuable to design and optimize the solvent crystallization process of 2,3-dichloronitrobenzene and other crystallization processes involving the two ternary systems.

  11. The Establishment, Plotting and Statistic– Mathematical Interpretation of the Liquidus Surface from the Phase Equilibrium Diagram of the Ternary System Al-Cu-Si

    Directory of Open Access Journals (Sweden)

    Florentina A. Cziple

    2006-10-01

    Full Text Available The paper forwards the conclusions of a survey performed on a mathematical model of the phase equilibrium from the ternary system Al-Cu-Si. The author presents the calculus of the statistic equation of the liquidus surface model from this diagram, the plotting and statistical-mathematical interpretation of the results obtained.

  12. Ternary particles with extreme N/Z ratios from neutron-induced fission

    International Nuclear Information System (INIS)

    Koster, U.; Faust, H.; Friedrichs, T.; Oberstedt, S.; Fioni, G.; Grob, M.; Ahmad, I. J.; Devlin, M.; Heinz, A.; Kondev, F. G.; Lauritsen, T.; Sarantites, D. G.; Siem, S.; Sobotka, L. G.; Sonzogni, A.

    2000-01-01

    The existing ternary fission models can well reproduce the yields of the most abundant light charged particles. However, these models tend to significantly overestimate the yields of ternary particles with an extreme N/Z ratio: 3 He, 11 Li, 14 Be, etc. The experimental yields of these isotopes were investigated with the recoil separator LOHENGRIN down to a level of 10 -10 per fission. Results from the fissioning systems 233 U (n th , f), 235 U(n th ,f), 239 Pu(n th ,f) 241 Pu(n th ,f) and 245 Cm(n th ,f) are presented and the implications for the ternary fission models are discussed

  13. Properties of ternary NiFeW alloy coating by jet electrodeposition

    Indian Academy of Sciences (India)

    In this paper, ternary NiFeW alloy coatings were prepared by jet electrodeposition, and the effects of lord salt concentration, jet speed, current density and temperature on the properties of the coatings, including the composition, microhardness, surface morphology, structure and corrosion resistance, were investigated.

  14. Gold-coated iron nanoparticles in transparent Si3N4 matrix thin films

    Science.gov (United States)

    Sánchez-Marcos, J.; Céspedes, E.; Jiménez-Villacorta, F.; Muñoz-Martín, A.; Prieto, C.

    2013-06-01

    A new method to prepare thin films containing gold-coated iron nanoparticles is presented. The ternary Fe-Au-Si3N4 system prepared by sequential sputtering has revealed a progressive variation of microstructures from Au/Fe/Au/Si3N4 multilayers to iron nanoparticles. Microstructural characterization by transmission electron microscopy, analysis of the magnetic properties and probing of the iron short-range order by X-ray absorption spectroscopy confirm the existence of a gold-coated iron nanoparticles of 1-2 nm typical size for a specific range of iron and gold contents per layer in the transparent silicon nitride ceramic matrix.

  15. Eutectics Me5Si3-MeSi2 in a triple system Mo-W-Si

    International Nuclear Information System (INIS)

    Gnesin, B.A.; Gurjiyants, P.A.; Borisenko, E.B.

    2001-01-01

    Refractory metals silicides high-melting point eutectics are of great interest for different high temperature applications: production of composite materials with silicon carbide skeleton, antioxidant protective coatings on carbon materials, brazing of carbon, silicon carbide and refractory metals alloys materials. Phase diagrams Mo-Si and W-Si are compared: diagrams are similar but not in all significant details. Number of possible crystal structures for molybdenum silicides is at least twice more, than for tungsten and this difference is manifested distinctly for composite samples with different W-Mo ratio air high-temperature tests. In tests of new silicon carbide-refractory metal silicides composites materials (REFSIC) with 10-20 seconds heating time up to 1700 o C and 20-40 seconds time of cooling silicides with molybdenum prevalence were not so steady as tungsten based silicides. Experimental data concerning eutectic temperature dependence on W-Mo ratio, X-ray diffraction data, scanning electron and optical microscopy structure investigations results and some properties are discussed. (author)

  16. Preparation and mass spectrometrical high temperature investigations on compounds of the quasi-ternary system Cs2O-Al2O3-SiO2

    International Nuclear Information System (INIS)

    Odoj, R.; Hilpert, K.; Nuernberg, H.W.

    1977-09-01

    Additions of aluminium oxide and silicen oxide to ceramic fuel for pyrocarbon-coated nuclear fuel paticles counteract a release of fission-cesium by compound formation. The vapourization tests carried out here using samples from the quasi-ternary system cesium-oxide-aluminium-oxide-silicon-oxide by means of high-temperature mass spectroscopy using a Knudsen cell served the optimization of this retention effect. The aim of the apparative changes on the knudsen cell were to shield heat radiation on the temperature measuring borehole through the tungsten wire cathode in order to be able to perform exact temperature measurements even below 1,000 0 C. A new method of preparation was developed to obtain defined cesium aluminium silicates whose composition was determined by Guinier and goniometer pictures as well as by microscopic investigations. According to the latter, 3 ternary compounds are present in the system investigated: CsAlSiO 4 , CsAlSi 2 O 6 and CsAlSi 5 O 12 . Their lattice constants were determined from goniometric measurements; the vapour pressure equection were set up from the measured cesium vapour pressure values over each sample and the enthalpies of the vapourization reactions were found to be 84 kcal for CsAlSiO 4 at 1,400 0 K, 100 kcal for CsAlSi 2 O 6 at 1,550 0 K and 122 kcal for CsAlSi 5 O 12 at 1,650 0 K. The cesium vapour pressures of the glas phases investigated of the system are above the Cs partial pressures of the solid crystalline phases of the same composition. The results of the work explain the causes of the reduction of the Cs release and show that the vapour pressure can be lowered by more than 10 orders of magnitude at reactor relevant temperatures by compound formation. (RB) [de

  17. Ternary particles with extreme N/Z ratios from neutron-induced fission

    Energy Technology Data Exchange (ETDEWEB)

    Koster, U.; Faust, H.; Friedrichs, T.; Oberstedt, S.; Fioni, G.; Grob, M.; Ahmad, I. J.; Devlin, M.; Heinz, A.; Kondev, F. G.; Lauritsen, T.; Sarantites, D. G.; Siem, S.; Sobotka, L. G.; Sonzogni, A.

    2000-05-16

    The existing ternary fission models can well reproduce the yields of the most abundant light charged particles. However, these models tend to significantly overestimate the yields of ternary particles with an extreme N/Z ratio: {sup 3}He, {sup 11}Li, {sup 14}Be, etc. The experimental yields of these isotopes were investigated with the recoil separator LOHENGRIN down to a level of 10{sup {minus}10} per fission. Results from the fissioning systems {sup 233}U (n{sub th}, f), {sup 235}U(n{sub th},f), {sup 239}Pu(n{sub th},f) {sup 241}Pu(n{sub th},f) and {sup 245}Cm(n{sub th},f) are presented and the implications for the ternary fission models are discussed.

  18. Ab-initio electronic structure calculations and properties of [Si{sub x}Sn{sub 1−x}]{sub 3}N{sub 4} ternary nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Pavloudis, Th. [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Zervos, M. [Nanostructured Materials and Devices Laboratory, Department of Mechanical and Manufacturing Engineering, PO Box 20537, Nicosia 1678 (Cyprus); Komninou, Ph. [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Kioseoglou, J., E-mail: sifisl@auth.gr [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece)

    2016-08-31

    We carry out ab initio electronic structure calculations of (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} using density functional theory with projector augmented-wave potentials under the generalized gradient approximation. We find that the energetically favorable structure of Sn{sub 3}N{sub 4} is the face-centered cubic spinel structure, followed by the hexagonal structure which has energy band gaps of 1.85 eV and 1.44 eV respectively. The (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} ternary compound can exhibit both cubic and hexagonal crystal structures over the full range of x. However, the cubic structure is found to be energetically favorable for x < 0.3 above which the hexagonal structure of (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} dominates. The energy band gap can be tuned continuously from 1.44 eV up to 5.8 eV in the case of the hexagonal crystal structure of (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} and from 1.85 eV to 4.82 eV in the case of cubic (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4}. Nevertheless the energy gap of (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} is direct only for x < 0.3 when it is cubic and for x < 0.5 when hexagonal. - Highlights: • (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} exhibits both cubic and hexagonal crystal structures. • The cubic structure is favorable for x < 0.3 and the hexagonal structure for x > 0.3. • The bandgap of hexagonal (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} may be tuned from 1.44 eV up to 5.8 eV. • The bandgap may be tuned from 1.85 eV to 4.82 eV for the cubic (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4}. • Bandgaps are direct for x < 0.3 (cubic) and for x < 0.5 3 (hexagonal (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4}).

  19. Binary and ternary systems

    International Nuclear Information System (INIS)

    Petrov, D.A.

    1986-01-01

    Conditions for thermodynamical equilibrium in binary and ternary systems are considered. Main types of binary and ternary system phase diagrams are sequently constructed on the basis of general regularities on the character of transition from one equilibria to others. New statements on equilibrium line direction in the diagram triple points and their isothermal cross sections are developed. New represenations on equilibria in case of monovariant curve minimum and maximum on three-phase equilibrium formation in ternary system are introduced

  20. A simple method for determining the lattice parameter and chemical composition in ternary bcc-Fe rich nanocrystals

    International Nuclear Information System (INIS)

    Moya, Javier A.; Gamarra Caramella, Soledad; Marta, Leonardo J.; Berejnoi, Carlos

    2015-01-01

    Highlights: • A method for determining composition in ternary nanocrystals is presented. • X-ray diffraction and Mössbauer spectroscopy data were employed. • We perform theoretical charts for lattice parameter of Fe-rich ternary alloys. • A linear relationship in lattice parameter for binary alloys is evaluated. • A parabolic relationship is proposed for the Fe–Co–Si alloy. - Abstract: Charts containing lattice parameters of Fe 1−x (M,N) x ternary systems with M and N = Si, Al, Ge or Co, and 0 ⩽ x ⩽ ∼0.3, were developed by implementing a linear relationship between the respective binary alloys with the same solute content of the ternary one. Charts were validated with experimental data obtained from literature. For the Fe–Co–Si system, the linear relationship does not fit the experimental data. For the other systems (except the Fe–Co–Ge one where no experimental data was found), the lineal relationship constitute a very good approximation. Using these charts and the lattice parameter data obtained from X-ray diffraction technique combining with the solute content data obtained from Mössbauer spectroscopy technique it is possible to determine the chemical composition of nanograins in soft magnetic nanocomposite materials and some examples are provided

  1. A simple method for determining the lattice parameter and chemical composition in ternary bcc-Fe rich nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Moya, Javier A., E-mail: jmoya.fi.uba@gmail.com [Grupo Interdisciplinario en Materiales-IESIING, Universidad Católica de Salta, INTECIN UBA-CONICET, Salta (Argentina); Gamarra Caramella, Soledad; Marta, Leonardo J. [Grupo Interdisciplinario en Materiales-IESIING, Universidad Católica de Salta, INTECIN UBA-CONICET, Salta (Argentina); Berejnoi, Carlos [Universidad Nacional de Salta, Facultad de Ingeniería, Salta (Argentina)

    2015-05-15

    Highlights: • A method for determining composition in ternary nanocrystals is presented. • X-ray diffraction and Mössbauer spectroscopy data were employed. • We perform theoretical charts for lattice parameter of Fe-rich ternary alloys. • A linear relationship in lattice parameter for binary alloys is evaluated. • A parabolic relationship is proposed for the Fe–Co–Si alloy. - Abstract: Charts containing lattice parameters of Fe{sub 1−x}(M,N){sub x} ternary systems with M and N = Si, Al, Ge or Co, and 0 ⩽ x ⩽ ∼0.3, were developed by implementing a linear relationship between the respective binary alloys with the same solute content of the ternary one. Charts were validated with experimental data obtained from literature. For the Fe–Co–Si system, the linear relationship does not fit the experimental data. For the other systems (except the Fe–Co–Ge one where no experimental data was found), the lineal relationship constitute a very good approximation. Using these charts and the lattice parameter data obtained from X-ray diffraction technique combining with the solute content data obtained from Mössbauer spectroscopy technique it is possible to determine the chemical composition of nanograins in soft magnetic nanocomposite materials and some examples are provided.

  2. Structure of Ni-rich Ni--Cr--B--Si coating alloys

    International Nuclear Information System (INIS)

    Knotek, O.; Lugscheider, E.; Reimann, H.

    1975-01-01

    The structures of quaternary, nickel-rich Ni--Cr--B--Si alloys were analyzed at a constant boron content of 10 at. percent and a temperature of 850 0 C. The composition range for silicide formation was determined. In these quaternary alloys, known binary nickel silicides, nickel and chromium borides, and the ternary silico-boride Ni 6 Si 2 B were confirmed. A new composition for the W 5 Si 3 -type phase in the Ni--B--Si system was proposed. (U.S.)

  3. Bioactivity of gel-glass powders in the CaO-SiO2 system: a comparison with ternary (CaO-P2O5-SiO2) and quaternary glasses (SiO2-CaO-P2O5-Na2O).

    Science.gov (United States)

    Saravanapavan, Priya; Jones, Julian R; Pryce, Russell S; Hench, Larry L

    2003-07-01

    Bioactive glasses react chemically with body fluids in a manner that is compatible with the repair processes of the tissues. This results in the formation of an interfacial bond between the glasses and living tissue. Bioactive glasses also stimulate bone-cell proliferation. This behavior is dependent on the chemical composition as well as the surface texture of the glasses. It has been recently reported that gel-derived monolith specimens in the binary SiO2 - CaO are bioactive over a similar molar range of SiO2 content as the previously studied ternary CaO-P2O5-SiO2 system. In this report, the preparation and bioactivity of the binary gel-glass powder with 70 mol % SiO2 is discussed and its bioactivity is compared with the melt-derived 45S5 (quaternary) Bioglass and sol-gel-derived 58S (ternary) bioactive gel-glass compositions. Dissolution kinetic parameters K(1) and K(2) were also computed based on the silicon release for all glass powders. It was shown that the simple two-component SiO2-CaO gel-glass powder is bioactive with comparable dissolution rates as the clinically used melt-derived 45S5 Bioglass powder and extensively studied sol-gel-derived 58S gel-glass powder. Copyright 2003 Wiley Periodicals, Inc.

  4. Equiaxed and columnar dendrite growth simulation in Al-7Si- Mg ternary alloys using cellular automaton method

    International Nuclear Information System (INIS)

    Chen, Rui; Xu, Qingyan; Liu, Baicheng

    2015-01-01

    In this paper, a modified cellular automaton (MCA) model allowing for the prediction of dendrite growth of Al-Si-Mg ternary alloys in two and three dimensions is presented. The growth kinetic of S/L interface is calculated based on the solute equilibrium approach. In order to describe the dendrite growth with arbitrarily crystallographic orientations, this model introduces a modified decentered octahedron algorithm for neighborhood tracking to eliminate the effect of mesh dependency on dendrite growth. The thermody namic and kinetic data needed for dendrite growth is obtained through coupling with Pandat software package in combination with thermodynamic/kinetic/equilibrium phase diagram calculation databases. The effect of interactions between various alloying elements on solute diffusion coefficient is considered in the model. This model has first been used to simulate Al-7Si (weight percent) binary dendrite growth followed by a validation using theoretical predictions. For ternary alloy, Al-7Si-0.5Mg dendrite simulation has been carried out and the effects of solute interactions on diffusion matrix as well as the differences of Si and Mg in solute distribution have been analyzed. For actual application, this model has been applied to simulate the equiaxed dendrite growth with various crystallographic orientations of Al-7Si-0.36Mg ternary alloy, and the predicted secondary dendrite arm spacing (SDAS) shows a reasonable agreement with the experimental ones. Furthermore, the columnar dendrite growth in directional solidification has also been simulated and the predicted primary dendrite arm spacing (PDAS) is in good agreement with experiments. The simulated results effectively demonstrate the abilities of the model in prediction of dendritic microstructure of Al-Si-Mg ternary alloy. (paper)

  5. Equiaxed and columnar dendrite growth simulation in Al-7Si- Mg ternary alloys using cellular automaton method

    Science.gov (United States)

    Chen, Rui; Xu, Qingyan; Liu, Baicheng

    2015-06-01

    In this paper, a modified cellular automaton (MCA) model allowing for the prediction of dendrite growth of Al-Si-Mg ternary alloys in two and three dimensions is presented. The growth kinetic of S/L interface is calculated based on the solute equilibrium approach. In order to describe the dendrite growth with arbitrarily crystallographic orientations, this model introduces a modified decentered octahedron algorithm for neighborhood tracking to eliminate the effect of mesh dependency on dendrite growth. The thermody namic and kinetic data needed for dendrite growth is obtained through coupling with Pandat software package in combination with thermodynamic/kinetic/equilibrium phase diagram calculation databases. The effect of interactions between various alloying elements on solute diffusion coefficient is considered in the model. This model has first been used to simulate Al-7Si (weight percent) binary dendrite growth followed by a validation using theoretical predictions. For ternary alloy, Al-7Si-0.5Mg dendrite simulation has been carried out and the effects of solute interactions on diffusion matrix as well as the differences of Si and Mg in solute distribution have been analyzed. For actual application, this model has been applied to simulate the equiaxed dendrite growth with various crystallographic orientations of Al-7Si-0.36Mg ternary alloy, and the predicted secondary dendrite arm spacing (SDAS) shows a reasonable agreement with the experimental ones. Furthermore, the columnar dendrite growth in directional solidification has also been simulated and the predicted primary dendrite arm spacing (PDAS) is in good agreement with experiments. The simulated results effectively demonstrate the abilities of the model in prediction of dendritic microstructure of Al-Si-Mg ternary alloy.

  6. Superconducting state in (W, Ta)5SiB2

    Science.gov (United States)

    Fukuma, M.; Kawashima, K.; Akimitsu, J.

    We characterize the superconducting state in a boro-silicide (W, Ta)5SiB2, with Tc of 6.5 K by means of magnetization, electrical resistivity, and specific heat measurements. As x increased, the transition temperature Tc abruptly enhances from 5.8 to 6.5 K. The magnetization versus magnetic field (M-H) curve indicated that (W, Ta)5SiB2 was a conventional type-II superconductor. The estimated lower critical field Hc1(0) and upper critical field Hc2(T) are about 121 Oe and 14.7 kOe, respectively. The penetration depth λ(0) and coherence length ξ(0) are calculated to be approximately 369 and 14.9 nm, respectively, using Ginzburg-Landau (GL) equations. Specific heat data shows the superconductivity in W4.5Ta0.5SiB2 belongs to a week-coupling BCS superconductor. Finally, we discuss the increasing of Tc in of (W, Ta)5SiB2 system.

  7. Investigations of the ternary system beryllium-carbon-tungsten and analyses of beryllium on carbon surfaces

    International Nuclear Information System (INIS)

    Kost, Florian

    2009-01-01

    Beryllium, carbon and tungsten are planned to be used as first wall materials in the future fusion reactor ITER. The aim of this work is a characterization of mixed material formation induced by thermal load. To this end, model systems (layers) were prepared and investigated, which give insight into the basic physical and chemical concepts. Before investigating ternary systems, the first step was to analyze the binary systems Be/C and Be/W (bottom-up approach), where the differences between the substrates PG (pyrolytic graphite) and HOPG (highly oriented pyrolytic graphite) were of special interest. Particularly X-ray photoelectron spectroscopy (XPS), low energy ion scattering (ISS) and Rutherford backscattering spectroscopy (RBS) were used as analysis methods. Beryllium evaporated on carbon shows an island growth mode, whereas a closed layer can be assumed for layer thicknesses above 0.7 nm. Annealing of the Be/C system induces Be 2 C island formation for T≥770 K. At high temperatures (T≥1170 K), beryllium carbide dissociates, resulting in (metallic) beryllium desorption. For HOPG, carbide formation starts at higher temperatures compared to PG. Activation energies for the diffusion processes were determined by analyzing the decreasing beryllium amount versus annealing time. Surface morphologies were characterized using angle-resolved XPS (ARXPS) and atomic force microscopy (AFM). Experiments were performed to study processes in the Be/W system in the temperature range from 570 to 1270 K. Be 2 W formation starts at 670 K, a complete loss of Be 2 W is observed at 1170 K due to dissociation (and subsequent beryllium desorption). Regarding ternary systems, particularly Be/C/W and C/Be/W were investigated, attaching importance to layer thickness (reservoir) variations. At room temperature, Be 2 C, W 2 C, WC and Be 2 W formation at the respective interfaces was observed. Further Be 2 C is forming with increasing annealing temperatures. Depending on the layer

  8. Thermodynamic calculation of the Fe-Zn-Si system

    Energy Technology Data Exchange (ETDEWEB)

    Su Xuping [Institute of Materials Research, School of Mechanical Engineering, Xiangtan University, Xiangtan 411105, Hunan (China)]. E-mail: sxping@xtu.edu.cn; Yin Fucheng [Institute of Materials Research, School of Mechanical Engineering, Xiangtan University, Xiangtan 411105, Hunan (China); Li Zhi [Institute of Materials Research, School of Mechanical Engineering, Xiangtan University, Xiangtan 411105, Hunan (China); Tang, N.-Y. [Teck Cominco Metals Ltd., Product Technology Centre, Mississauga, Ont., L5K 1B4 (Canada); Zhao Manxiu [Institute of Materials Research, School of Mechanical Engineering, Xiangtan University, Xiangtan 411105, Hunan (China)

    2005-06-21

    Silicon in steel significantly affects alloy growth kinetics in the coating in general galvanizing, thereby changing the coating microstructure from the usual stratified Fe-Zn alloy layers to a mass of {zeta} crystallites surrounding by liquid zinc. The Zn-Fe-Si phase diagram and the relevant thermodynamic information have great importance for the galvanizing industry in developing remedies for this problem. In this work, the available information on the Fe-Zn-Si system, including all three binary systems was reviewed and re-evaluated, and ternary parameters were extracted from the available experimental data. By assuming all the binary intermetallic phases with the exception of the {delta}, {gamma}{sub 1}, and {gamma} phases, have no ternary solubility, a thermodynamic calculation of the Fe-Zn-Si system was carried out, and relevant isothermal and isopleths sections were calculated. Its applicability in galvanizing industry was discussed. There is a good agreement between the calculated and the experimentally determined phase boundaries.

  9. Reaction phases and diffusion paths in SiC/metal systems

    Energy Technology Data Exchange (ETDEWEB)

    Naka, M.; Fukai, T. [Osaka Univ., Osaka (Japan); Schuster, J.C. [Vienna Univ., Vienna (Austria)

    2004-07-01

    The interface structures between SiC and metal are reviewed at SiC/metal systems. Metal groups are divided to carbide forming metals and non-carbide forming metals. Carbide forming metals form metal carbide granular or zone at metal side, and metal silicide zone at SiC side. The further diffusion of Si and C from SiC causes the formation of T ternary phase depending metal. Non-carbide forming metals form silicide zone containing graphite or the layered structure of metal silicide and metal silicide containing graphite. The diffusion path between SiC and metal are formed along tie-lines connecting SiC and metal on the corresponding ternary Si-C-M system. The reactivity of metals is dominated by the forming ability of carbide or silicide. Te reactivity tendency of elements are discussed on the periodical table of elements, and Ti among elements shows the highest reactivity among carbide forming metals. For non-carbide forming metals the reactivity sequence of metals is Fe>Ni>Co. (orig.)

  10. E centers in ternary Si1−x−yGexSny random alloys

    KAUST Repository

    Chroneos, Alexander; Bracht, H.; Grimes, R. W.; Jiang, C.; Schwingenschlö gl, Udo

    2009-01-01

    Density functional theory calculations are used to study the association of arsenic (As) atoms to lattice vacancies and the formation of As-vacancy pairs, known as E centers, in the random Si0.375Ge0.5Sn0.125 alloy. The local environments are described by 32-atom special quasirandom structures that represent random Si1−x−yGexSny alloys. It is predicted that the nearest-neighbor environment will exert a strong influence on the stability of E centers in ternary Si0.375Ge0.5Sn0.125.

  11. E centers in ternary Si1−x−yGexSny random alloys

    KAUST Repository

    Chroneos, Alexander

    2009-09-14

    Density functional theory calculations are used to study the association of arsenic (As) atoms to lattice vacancies and the formation of As-vacancy pairs, known as E centers, in the random Si0.375Ge0.5Sn0.125 alloy. The local environments are described by 32-atom special quasirandom structures that represent random Si1−x−yGexSny alloys. It is predicted that the nearest-neighbor environment will exert a strong influence on the stability of E centers in ternary Si0.375Ge0.5Sn0.125.

  12. New investigation of phase equilibria in the system Al-Cu-Si.

    Science.gov (United States)

    Ponweiser, Norbert; Richter, Klaus W

    2012-01-25

    The phase equilibria and invariant reactions in the system Al-Cu-Si were investigated by a combination of optical microscopy, powder X-ray diffraction (XRD), differential thermal analysis (DTA) and electron probe micro analysis (EPMA). Isothermal phase equilibria were investigated within two isothermal sections. The isothermal section at 500 °C covers the whole ternary composition range and largely confirms the findings of previous phase diagram investigations. The isothermal section at 700 °C describes phase equilibria only in the complex Cu-rich part of the phase diagram. A new ternary compound τ was found in the region between (Al,Cu)-γ(1) and (Cu,Si)-γ and its solubility range was determined. The solubility of Al in κ-CuSi was found to be extremely high at 700 °C. In contrast, no ternary solubility in the β-phase of Cu-Al was found, although this phase is supposed to form a complete solid solution according to previous phase diagram assessments. Two isopleths, at 10 and 40 at.% Si, were investigated by means of DTA and a partial ternary reaction scheme (Scheil diagram) was constructed, based on the current work and the latest findings in the binary systems Al-Cu and Cu-Si. The current study shows that the high temperature equilibria in the Cu-rich corner are still poorly understood and additional studies in this area would be favorable.

  13. Blue-emitting LaSi3N5:Ce3+ fine powder phosphor for UV-converting white light-emitting diodes

    Science.gov (United States)

    Suehiro, Takayuki; Hirosaki, Naoto; Xie, Rong-Jun; Sato, Tsugio

    2009-08-01

    We have synthesized the pure ternary nitride phosphor, LaSi3N5:Ce3+ from the multicomponent oxide system La2O3-CeO2-SiO2, by using the gas-reduction-nitridation method. Highly pure, single-phase LaSi3N5:Ce3+ powders possessing particle sizes of ˜0.4-0.6 μm were obtained with the processing temperature ≤1500 °C. The synthesized LaSi3N5:Ce3+ exhibits tunable blue broadband emission with the dominant wavelength of 464-475 nm and the external quantum efficiency of ˜34%-67% under excitation of 355-380 nm. A high thermal stability of LaSi3N5:Ce3+ compared to the existing La-Si-O-N hosts was demonstrated, indicating the promising applicability as a blue-emitting phosphor for UV-converting white light-emitting diodes.

  14. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  15. Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

    Directory of Open Access Journals (Sweden)

    Yu Kee Ooi

    2015-05-01

    Full Text Available Phosphor-free monolithic white light emitting diodes (LEDs based on InGaN/ InGaN multiple quantum wells (MQWs on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (∼ 170 mW and high external quantum efficiency (EQE (∼ 50%. The chromaticity coordinate for the investigated monolithic white LED devices are located at (0.30, 0.28 with correlated color temperature (CCT of ∼ 8200 K at J = 50 A/cm2. A reference LED device without any nanostructure engineering exhibits green color emission shows that proper engineered structure is essential to achieve white color illumination. This proof-of-concept study demonstrates that high-efficiency and cost-effective phosphor-free monolithic white LED is feasible by the use of InGaN/ InGaN MQWs on ternary InGaN substrate combined with nanostructure engineering, which would be of great impact for solid state lighting.

  16. Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ooi, Yu Kee, E-mail: Yu.Kee.Ooi@rit.edu; Zhang, Jing, E-mail: Jing.Zhang@rit.edu [Department of Electrical and Microelectronics Engineering, Rochester Institute of Technology, Rochester, New York 14623 (United States)

    2015-05-15

    Phosphor-free monolithic white light emitting diodes (LEDs) based on InGaN/ InGaN multiple quantum wells (MQWs) on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs) employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (∼ 170 mW) and high external quantum efficiency (EQE) (∼ 50%). The chromaticity coordinate for the investigated monolithic white LED devices are located at (0.30, 0.28) with correlated color temperature (CCT) of ∼ 8200 K at J = 50 A/cm{sup 2}. A reference LED device without any nanostructure engineering exhibits green color emission shows that proper engineered structure is essential to achieve white color illumination. This proof-of-concept study demonstrates that high-efficiency and cost-effective phosphor-free monolithic white LED is feasible by the use of InGaN/ InGaN MQWs on ternary InGaN substrate combined with nanostructure engineering, which would be of great impact for solid state lighting.

  17. Cluster-based bulk metallic glass formation in Fe-Si-B-Nb alloy systems

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, C L; Wang, Q; Li, F W; Li, Y H; Wang, Y M; Dong, C [State Key Laboratory of Materials Modification, Dalian University of Technology (DUT), Dalian 116024 (China); Zhang, W; Inoue, A, E-mail: dong@dlut.edu.c [Institute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577 (Japan)

    2009-01-01

    Bulk metallic glass formations have been explored in Fe-B-Si-Nb alloy system using the so-called atomic cluster line approach in combination with minor alloying guideline. The atomic cluster line refers to a straight line linking binary cluster to the third element in a ternary system. The basic ternary compositions in Fe-B-Si system are determined by the inetersection points of two cluster lines, namely Fe-B cluster to Si and Fe-Si cluster to B, and then further alloyed with 3-5 at. % Nb for enhancing glass forming abilities. BMG rods with a diameter of 3 mm are formed under the case of minor Nb alloying the basic intersecting compositions of Fe{sub 8}B{sub 3}-Si with Fe{sub 12}Si-B and Fe{sub 8}B{sub 2}-Si with Fe{sub 9}Si-B. The BMGs also exhibit high Vickers hardness (H{sub v}) of 1130-1164 and high Young's modulous (E) of 170-180 GPa

  18. Gold-coated iron nanoparticles in transparent Si{sub 3}N{sub 4} matrix thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Marcos, J. [Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Madrid (Spain); Cespedes, E. [Keele University, Institute for Science and Technology in Medicine, Guy Hilton Research Centre (United Kingdom); Jimenez-Villacorta, F. [Northeastern University, Department of Chemical Engineering (United States); Munoz-Martin, A. [Universidad Autonoma de Madrid, Centro de Microanalisis de Materiales (Spain); Prieto, C., E-mail: cprieto@icmm.csic.es [Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Madrid (Spain)

    2013-06-15

    A new method to prepare thin films containing gold-coated iron nanoparticles is presented. The ternary Fe-Au-Si{sub 3}N{sub 4} system prepared by sequential sputtering has revealed a progressive variation of microstructures from Au/Fe/Au/Si{sub 3}N{sub 4} multilayers to iron nanoparticles. Microstructural characterization by transmission electron microscopy, analysis of the magnetic properties and probing of the iron short-range order by X-ray absorption spectroscopy confirm the existence of a gold-coated iron nanoparticles of 1-2 nm typical size for a specific range of iron and gold contents per layer in the transparent silicon nitride ceramic matrix.

  19. Structure of the novel ternary hydrides Li4Tt2D (Tt=Si and Ge)

    International Nuclear Information System (INIS)

    Wu Hui; Rush, J.J.; Maryland Univ., College Park, MD; Hartman, M.R.; Oregon State Univ., Corvallis, OR; Udovic, T.J.; Zhou Wei; Pennsylvania Univ., Philadelphia, PA; Bowman, R.C. Jr.; Vajo, J.J.

    2007-01-01

    The crystal structures of newly discovered Li 4 Ge 2 D and Li 4 Si 2 D ternary phases were solved by direct methods using neutron powder diffraction data. Both structures can be described using a Cmmm orthorhombic cell with all hydrogen atoms occupying Li 6 -octahedral interstices. The overall crystal structure and the geometry of these interstices are compared with those of other related phases, and the stabilization of this novel class of ternary hydrides is discussed. (orig.)

  20. Superconductivity in ternary rare earth transition metal silicides and germanides with the Sc5Co4Si10-type structure

    International Nuclear Information System (INIS)

    Berg, L.S.

    1986-01-01

    A systematic study of the superconducting and normal state properties of some ternary rare earth transition metal silicides and germanides of the Sc 5 Co 4 Si 10 0-type is reported. Low temperature heat capacity measurements indicate the presence of a complicated phonon density of states in these structurally complex compounds. A better description of the phonon spectrum of the high T/sub c/ materials Sc 5 Rh 4 Si 10 , Sc 5 Ir 4 Si 10 , and Y 5 Os 4 Ge 10 , given by a model proposed by Junod et al., is presented and discussed. The large values of ΔC/γ/sub n/T/sub c/ and the electron-phonon coupling constant for these high T/sub c/ compounds indicate that they are strong-coupled superconductors. Relative to other ternary superconductors, many of these materials have large Debye temperatures. DC electrical resistivity measurements on these compounds show resistivity behavior deviating from those exhibited by simple metals. The rho(T) data for Y 5 Ir 4 Si 10 , Lu 5 Ir 4 Si 10 , and Y 5 Os 4 Ge 10 , indicate the presence of anomalies. Static molar magnetic susceptibility measurements performed on these compounds indicate (1) a small effective magnetic moment of 0.26μ/sub B/ on the Co atom and (2) anomalous behaviors in the Lu 5 Rh 4 Si 10 , Lu 5 Ir 4 Si 10 , Y 5 Ir 4 Si 10 , Lu 5 Ir 4 Ge 10 , and Y 5 Rh 4 Ge 10 data. Lastly, upper critical magnetic field measurements were performed on Sc 5 Co 4 Si 10 , Sc 5 Rh 4 Si 10 , Sc 5 Ir 4 Si 10 , Lu 5 Rh 4 Si 10 , Lu 5 Ir 4 Si 10 , and Y 5 Os 4 Ge 10

  1. Ternary particle yields in 249Cf(nth,f)

    International Nuclear Information System (INIS)

    Tsekhanovich, I.; Bueyuekmumcu, Z.; Davi, M.; Denschlag, H.O.; Goennenwein, F.; Boulyga, S.F.

    2003-01-01

    An experiment measuring ternary particle yields in 249 Cf(n th ,f) was carried out at the high flux reactor of the Institut Laue-Langevin using the Lohengrin recoil mass separator. Parameters of energy distributions were determined for 27 ternary particles up to 30 Mg and their yields were calculated. The yields of 17 further ternary particles were estimated on the basis of the systematics developed. The heaviest particles observed in the experiment are 37 Si and 37 S; their possible origin is discussed

  2. Effective Passivation and Tunneling Hybrid a-SiOx(In) Layer in ITO/n-Si Heterojunction Photovoltaic Device.

    Science.gov (United States)

    Gao, Ming; Wan, Yazhou; Li, Yong; Han, Baichao; Song, Wenlei; Xu, Fei; Zhao, Lei; Ma, Zhongquan

    2017-05-24

    In this article, using controllable magnetron sputtering of indium tin oxide (ITO) materials on single crystal silicon at 100 °C, the optoelectronic heterojunction frame of ITO/a-SiO x (In)/n-Si is simply fabricated for the purpose of realizing passivation contact and hole tunneling. It is found that the gradation profile of indium (In) element together with silicon oxide (SiO x /In) within the ultrathin boundary zone between ITO and n-Si occurs and is characterized by X-ray photoelectron spectroscopy with the ion milling technique. The atomistic morphology and physical phase of the interfacial layer has been observed with a high-resolution transmission electron microscope. X-ray diffraction, Hall effect measurement, and optical transmittance with Tauc plot have been applied to the microstructure and property analyses of ITO thin films, respectively. The polycrystalline and amorphous phases have been verified for ITO films and SiO x (In) hybrid layer, respectively. For the quantum transport, both direct and defect-assisted tunneling of photogenerated holes through the a-SiO x (In) layer is confirmed. Besides, there is a gap state correlative to the indium composition and located at E v + 4.60 eV in the ternary hybrid a-SiO x (In) layer that is predicted by density functional theory of first-principles calculation, which acts as an "extended delocalized state" for direct tunneling of the photogenerated holes. The reasonable built-in potential (V bi = 0.66 V) and optimally controlled ternary hybrid a-SiO x (In) layer (about 1.4 nm) result in that the device exhibits excellent PV performance, with an open-circuit voltage of 0.540 V, a short-circuit current density of 30.5 mA/cm 2 , a high fill factor of 74.2%, and a conversion efficiency of 12.2%, under the AM 1.5 illumination. The work function difference between ITO (5.06 eV) and n-Si (4.31 eV) is determined by ultraviolet photoemission spectroscopy and ascribed to the essence of the built-in-field of the PV device

  3. Description of the ternary system Cu-Ge-Te

    International Nuclear Information System (INIS)

    Dogguy, M.; Carcaly, C.; Rivet, J.; Flahaut, J.

    1977-01-01

    The Cu-Ge-Te ternary system has been studied by DTA and by crystallographic and metallographic analysis. The existence of a ternary compound Cu 2 GeTe 3 is demonstrated; this compound has a ternary incongruent melting point at 500 0 C. This ternary compound has a superstructure of a zinc blende type. The study shows the existence of five ternary eutectics. Two liquid-liquid miscibility gaps exist: the first is situated entirely in the ternary system; the second gives a monotectic region within the ternary system. (Auth.)

  4. Electronic structure and bonding in the ternary silicide YNiSi3

    International Nuclear Information System (INIS)

    Sung, Gi Hong; Kang, Dae Bok

    2003-01-01

    An analysis of the electronic structure and bonding in the ternary silicide YNiSi 3 is made, using extended Hueckel tight-binding calculations. The YNiSi 3 structure consists of Ni-capped Si 2 dimer layers and Si zigzag chains. Significant bonding interactions are present between the silicon atoms in the structure. The oxidation state formalism of (Y 3+ )(Ni 0 )(Si 3 ) 3- for YNiSi 3 constitutes a good starting point to describe its electronic structure. Si atoms receive electrons form the most electropositive Y in YNiSi 3 , and Ni 3d and Si 3p states dominate below the Fermi level. There is an interesting electron balance between the two Si and Ni sublattices. Since the π orbitals in the Si chain and the Ni d and s block levels are almost completely occupied, the charge balance for YNiSi 3 can be rewritten as (Y 3+ )(Ni 2- )(Si 2- )(Si-Si) + , making the Si 2 layers oxidized. These results suggest that the Si zigzag chain contains single bonds and the Si 2 double layer possesses single bonds within a dimer with a partial double bond character. Stronger Si-Si and Ni-Si bonding interactions are important for giving stability to the structure, while essentially no metal-metal bonding exists at all. The 2D metallic behavior of this compound is due to the Si-Si interaction leading to dispersion of the several Si 2 π bands crossing the Fermi level in the plane perpendicular to the crystallographic b axis

  5. Synthesis and properties of Ag/ZnO/g-C3N4 ternary micro/nano composites by microwave-assisted method

    Science.gov (United States)

    Zhang, Zijie; Li, Xuexue; Chen, Haitao; Shao, Gang; Zhang, Rui; Lu, Hongxia

    2018-01-01

    Ag/ZnO/g-C3N4 ternary micro/nanocomposites, as novel visible-light-driven photocatalysts, were prepared by a simple and convenient microwave-assisted method. The resulting ternary structure micro/nano composites were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, ultraviolet-visible diffuse reflectance spectroscopy and infrared radiation techniques to examine its phase structure, valence state, morphological, thermal and optical properties. Well crystallized Ag/ZnO/g-C3N4 ternary micro/nano composites were synthesized under microwave-radiation for 15 min with the output of 240 W. Further experiments indicated Ag(5.0mol%)/ZnO/g-C3N4 photocatalyst in degradation of methylene blue exhibited an outstanding photocatalytic activity and its reaction rate constant (k, 0.0084 min-1) is 7.5, 2.4 2.9 and 3.5 times higher than that of monolithic ZnO (k, 0.0011 min-1), ZnO/g-C3N4(k, 0.0035 min-1), Ag(5 mol%)/ZnO(k, 0.0029 min-1) and Ag(5mol%)/g-C3N4 (k, 0.0024 min-1) respectively. Finally, a possible photocatalytic mechanism of Ag/ZnO/g-C3N4 photocatalyst in degradation process was proposed. This work provides a feasible strategy to synthesize an efficient ZnO-based photocatalyst which combines structure and properties of different dimensional components and made this ternary system an exciting candidate for sunlight-driven photocatalytic water treatment.

  6. LIQUID-LIQUID EQUILIBRIA OF THE TERNARY SYSTEMS PROPIONIC ACID - WATER - SOLVENT (n-AMYL ALCOHOL AND n-AMYL ACETATE

    Directory of Open Access Journals (Sweden)

    Dilek ÖZMEN

    2005-02-01

    Full Text Available The experimental liquid-liquid equilibrium (LLE data have been obtained at 25 oC for ternary systems propionic acid-water-n-amyl alcohol and propionic acid-water-n-amyl acetate. The reliability of the experimental tie line data are checked using the methods of Othmer-Tobias and Hand. The distribution coefficients and separation factors were obtained from experimental results and are also reported. The predicted tie line data obtained by UNIFAC method are compared with experimental data. It is concluded that n-amyl alcohol and n-amyl acetate are suitable separating agents for dilute aqueous propionic acid solutions.

  7. A low temperature co-fired ceramic power inductor manufactured using a glass-free ternary composite material system

    Science.gov (United States)

    Li, Yuanxun; Xie, Yunsong; Xie, Ru; Chen, Daming; Han, Likun; Su, Hua

    2018-03-01

    A glass-free ternary composite material system (CMS) manufactured employing the low temperature ( 890 ° C ) co-fired ceramic (LTCC) technique is reported. This ternary CMS consists of silver, NiCuZn ferrite, and Zn2SiO4 ceramic. The reported device fabricated from this ternary CMS is a power inductor with a nominal inductance of 1.0 μH. Three major highlights were achieved from the device and the material study. First, unlike most other LTCC methods, no glass is required to be added in either of the dielectric materials in order to co-fire the NiCuZn ferrite, Zn2SiO4 ceramic, and silver. Second, a successfully co-fired silver, NiCuZn, and Zn2SiO4 device can be achieved by optimizing the thermal shrinkage properties of both NiCuZn and Zn2SiO4, so that they have a very similar temperature shrinkage profile. We have also found that strong non-magnetic elemental diffusion occurs during the densification process, which further enhances the success rate of manufacturing co-fired devices. Last but not least, elemental mapping suggests that strong magnetic elemental diffusion between NiCuZn and Zn2SiO4 has been suppressed during the co-firing process. The investigation of electrical performance illustrates that while the ordinary binary CMS based power inductor can deal with 400 mA DC, the ternary CMS based power inductor is able to handle higher DC currents, 700 mA and 620 mA DC, according to both simulation and experiment demonstrations, respectively.

  8. A comparative study of three ternary complexes prepared in different mixing orders of siRNA/redox-responsive hyperbranched poly (amido amine/hyaluronic acid

    Directory of Open Access Journals (Sweden)

    Chen CJ

    2012-07-01

    Full Text Available Cheng-Jun Chen,1 Zhi-Xia Zhao,1 Jian-Cheng Wang,1 En-Yu Zhao,1 Ling-Yan Gao,1 Shu-Feng Zhou,2 Xiao-Yan Liu,1 Wan-Liang Lu,1 Qiang Zhang11State Key Laboratory of Natural and Biomimetic Drugs, Department of Pharmaceutics, School of Pharmaceutical Science, Peking University, Beijing, People’s Republic of China; 2Department of Pharmaceutical Sciences, College of Pharmacy, University of South Florida, Tampa, FL, USAAbstract: In this study, a novel redox-responsive hyperbranched poly(amido amine (named PCD was synthesized and used as a cationic polymer to form a ternary complex with small interfering RNA (siRNA and hyaluronic acid (HA for siRNA delivery. Here, it is hypothesized that different mixing orders result in different assembly structures, which may affect the siRNA delivery efficiency. To investigate the effects of mixing orders on siRNA delivery efficiency in two human breast cancer cell lines, three ternary complexes with different mixing orders of siRNA/PCD/HA were prepared and characterized: mixing order I (initially prepared siRNA/PCD binary complex further coated by negatively charged HA, mixing order II (initially prepared HA/PCD binary complex further incubated with siRNA, and mixing order III (initially prepared siRNA/HA mixture further electrostatically compacted by positively charged PCD. With an optimized siRNA/PCD/HA charge ratio of 1/20/16, the particle sizes and zeta potentials of these ternary complexes were 124.8 nm and 27.3 mV (mixing order I, 147.5 nm and 29.9 mV (mixing order II, and 128.8 nm and 19.4 mV (mixing order III. Also, the effects on stability, cellular uptake, and gene silencing efficiency of siRNA formulated in ternary complexes with different mixing orders were investigated. The results showed that mixing orders I and III displayed better siRNA transfection and protection than mixing order II in human breast cancer MCF-7 and MDA-MB-231 cells. More interesting, at the siRNA/PCD/HA charge ratio of 1/20/16, the

  9. Susceptibility of ternary aluminum alloys to cracking during solidification

    International Nuclear Information System (INIS)

    Liu, Jiangwei; Kou, Sindo

    2017-01-01

    The crack susceptibility map of a ternary Al alloy system provides useful information about which alloy compositions are most susceptible to cracking and thus should be avoided by using a filler metal with a significantly different composition. In the present study the crack susceptibility maps of ternary Al alloy systems were calculated based on the maximum |dT/d(f S ) 1/2 | as an index for the crack susceptibility, where T is temperature and f S fraction solid. Due to the complexity associated with ternary alloy solidification, commercial thermodynamic software Pandat and Al database PanAluminum, instead of analytical equations, were used to calculate f S as a function of T and hence the maximum |dT/d(f S ) 1/2 | for ternary Al-Mg-Si, Al-Cu-Mg and Al-Cu-Si alloy systems. A crack susceptibility map covering 121 alloy compositions was constructed for each of the three ternary alloy systems at each of the following three levels of back diffusion: no back diffusion, back diffusion under a 100 °C/s cooling rate, and back diffusion under 20° C/s. The location of the region of high crack susceptibility, which is the most important part of the map, was shown in each of the nine calculated maps. These locations were compared with those observed in crack susceptibility tests by previous investigators. With back diffusion considered, either under 20 or 100 °C/s, the agreement between the calculated and observed maps was good especially for Al-Mg-Si and Al-Cu-Mg. Thus, the maximum |dT/d(f S ) 1/2 | can be used as a crack susceptibility index to construct crack susceptibility maps for ternary Al alloys and to evaluate the effect of back diffusion on their crack susceptibility. - Graphical abstract: The crack susceptibility map of a ternary alloy system indicates the composition range most susceptible to cracking, which should be avoided in welding or casting. The crack susceptibility maps of ternary Al alloy systems Al-Mg-Si, Al-Cu-Mg and Al-Cu-Si were calculated based

  10. The 480 deg. C and 405 deg. C isothermal sections of the phase diagram of Fe-Zn-Si ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jianhua [Institute of Materials Research, School of Mechanical Engineering, Xiangtan University, Hunan 411105 (China)]. E-mail: super_wang111@hotmail.com; Su Xuping [Institute of Materials Research, School of Mechanical Engineering, Xiangtan University, Hunan 411105 (China); Yin Fucheng [Institute of Materials Research, School of Mechanical Engineering, Xiangtan University, Hunan 411105 (China); Li Zhi [Institute of Materials Research, School of Mechanical Engineering, Xiangtan University, Hunan 411105 (China); Zhao Manxiu [Institute of Materials Research, School of Mechanical Engineering, Xiangtan University, Hunan 411105 (China)

    2005-08-16

    The 480 deg. C and 405 deg. C isothermal sections of the Fe-Zn-Si ternary phase diagram have been determined experimentally using scanning electron microscopy (SEM) coupled with energy dispersive X-ray spectroscopy (EDS) and X-ray diffractometry. The research of the work has concentrated on the Zn-rich corner, which is relevant to general galvanizing. The present studies have confirmed the existence of equilibrium state between the liquid, the {zeta} phase and the FeSi phase at the 480 deg. C isothermal section. There exist some changes in the phase relationships compared with the isothermal section at 450 deg. C. Experimental results indicate that Si solubility in all four Zn-Fe compounds is also limited at 480 deg. C and 405 deg. C.

  11. Evaluation of hyaluronic acid-combined ternary complexes for serum-resistant and targeted gene delivery system.

    Science.gov (United States)

    Hong, Woong-Gil; Jeong, Gyeong-Won; Nah, Jae-Woon

    2018-04-19

    Branched polyethylenimine (bPEI) was well known as high transfection agent, which has many amine group. However, utilization of bPEI was limited due to high toxicity. To solve these problems, bPEI was introduced to low molecular weight water-soluble chitosan (LMWSC) with coupling agent. In addition, hyaluronic acid (HA), one of natural anion polymer, was introduced to binary complex of pDNA/bPEI-grafted LMWSC (LMPEI) to target the specific cancer cell and impart the serum resistant. Ternary complexes of pDNA/LMPEI/HA were prepared by electrostatic charge interaction and their binding affinity and DNase protection assay were conducted by gel retardation assay. Particle size of ternary complexes showed that had each 482 ± 245.4 (pDNA/LMPEI2%/HA, 1:16:1, w/w/w) and 410 ± 78.5 nm (pDNA/LMPEI4%/HA, 1:16:2, w/w/w). Moreover, to demonstrate serum-resistant effect of ternary complexes, particle size of them was measured according to incubated time (0-10 h) under serum condition. Transfection assay of ternary complexes showed that their transfection efficiency in CD44-receptor overexpressed HCT116 cell was higher than CD44-receptor negative CT26 cell. Additionally, intracellular uptake of ternary complexes with propidium iodide (PI)-labeled pDNA was observed to confirm targeting effect and cellular internalization by fluorescence microscopy. These results suggest that ternary complexes are superb gene carrier with excellent serum-resistant and high gene transfection. Copyright © 2017. Published by Elsevier B.V.

  12. Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.

    Science.gov (United States)

    Shevlyagin, A V; Goroshko, D L; Chusovitin, E A; Galkin, K N; Galkin, N G; Gutakovskii, A K

    2015-10-05

    By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

  13. Thermodynamic assessment of the Nb-W-C system

    International Nuclear Information System (INIS)

    Huang Weiming; Selleby, M.

    1997-01-01

    The phase equilibrium and thermodynamic information of the Nb-W-C system was reviewed and assessed by using thermodynamic models for the Gibbs energy of individual phases. The assessment was based on the recent evaluations of the W-C, Nb-W and Nb-C, which was revised in the present work taking ternary information into account. The model parameters were evaluated by fitting the selected experimental data by means of a computer program. A consistent set of parameters was obtained, which satisfactorily describes most of the experimental information. (orig.)

  14. W/SiC X-ray multilayers optimized for use above 100 keV

    DEFF Research Database (Denmark)

    Windt, D.L.; Dongey, S.; Hailey, C.J.

    2002-01-01

    -derived optical constants, which we determined from reflectance-vs-incidence angle measurements also made using synchrotron radiation, in the range E=120 - 180 keV. We describe our experimental investigation in detail, compare the new W/SiC multilayers with both W/Si and W/B4C films that have been studied......We have developed a new depth-graded multilayer system comprising W and SiC layers, suitable for use as hard X-ray reflective coatings operating in the energy range 100 - 200 keV. Grazing incidence X-ray reflectance at E=8 keV was used to characterize the interface widths, as well as the temporal...... and thermal stability in both periodic and depth-graded W/SiC structures, while synchrotron radiation was used to measure the hard X-ray reflectance of a depth-graded multilayer designed specifically for use in the range Esimilar to150 - 170 keV. We have modeled the hard X-ray reflectance using newly...

  15. W/SiC x-ray multilayers optimized for use above 100 keV

    DEFF Research Database (Denmark)

    Windt, D.L.; Donguy, S.; Hailey, C.J.

    2003-01-01

    optical constants, which we determined from reflectance versus incidence angle measurements also made using synchrotron radiation, in the range E = 120-180 keV. We describe our experimental investigation in detail, compare the new W/SiC multilayers with both W/Si and W/B4C films that have been studied......We have developed a new depth-graded multilayer system comprising W and SiC layers, suitable for use as hard x-ray reflective coatings operating in the energy range 100-200 keV. Grazing-incidence x-ray reflectance at E = 8 keV was used to characterize the interface widths, as well as the temporal...... and thermal stability in both periodic and depth-graded W/SiC structures, whereas synchrotron radiation was used to measure the hard x-ray reflectance of a depth-graded multilayer designed specifically for use in, the range Esimilar to150-170 keV. We have modeled the hard x-ray reflectance using newly derived...

  16. The Li–Si–(O)–N system revisited: Structural characterization of Li{sub 21}Si{sub 3}N{sub 11} and Li{sub 7}SiN{sub 3}O

    Energy Technology Data Exchange (ETDEWEB)

    Casas-Cabanas, M. [CIC energiGUNE, Parque Tecnológico de Álava, Albert Einstein 48, ED.CIC, 01510 Miñano (Spain); Santner, H. [Institut de Ciència de Materials de Barcelona (CSIC) Campus UAB, 08193 Bellaterra, Catalonia (Spain); Palacín, M.R., E-mail: rosa.palacin@icmab.es [Institut de Ciència de Materials de Barcelona (CSIC) Campus UAB, 08193 Bellaterra, Catalonia (Spain)

    2014-05-01

    A systematic study of the Li–Si–(O)–N system is presented. The synthetic conditions to prepare Li{sub 2}SiN{sub 2}, Li{sub 5}SiN{sub 3}, Li{sub 18}Si{sub 3}N{sub 10}, Li{sub 21}Si{sub 3}N{sub 11} and Li{sub 7}SiN{sub 3}O are described and the structure of the last two compounds has been solved for the first time. While Li{sub 21}Si{sub 3}N{sub 11} crystallizes as a superstructure of the anti-fluorite structure with Li and Si ordering, Li{sub 7}SiN{sub 3}O exhibits the anti-fluorite structure with both anion and cation disorder. - Graphical abstract: A systematic study of the Li–Si–(O)–N system is presented. Li{sub 21}Si{sub 3}N{sub 11} crystallizes as a superstructure of the anti-fluorite structure with Li and Si ordering, Li{sub 7}SiN{sub 3}O exhibits the anti-fluorite structure with both anion and cation disorder. - Highlights: • Li{sub 2}SiN{sub 2}, Li{sub 5}SiN{sub 3}, Li{sub 18}Si{sub 3}N{sub 10}, Li{sub 21}Si{sub 3}N{sub 11} and Li{sub 7}SiN{sub 3}O are prepared. • The structures of Li{sub 21}Si{sub 3}N{sub 11} and Li{sub 7}SiN{sub 3}O are presented. • Li{sub 21}Si{sub 3}N{sub 11} exhibits an anti-fluorite superstructure with Li and Si ordering.

  17. Development of Readout Interconnections for the Si-W Calorimeter of SiD

    Energy Technology Data Exchange (ETDEWEB)

    Woods, M.; Fields, R.G.; Holbrook, B.; Lander, R.L.; Moskaleva, A.; Neher, C.; Pasner, J.; Tripathi, M.; /UC, Davis; Brau, J.E.; Frey, R.E.; Strom, D.; /Oregon U.; Breidenbach, M.; Freytag, D.; Haller, G.; Herbst, R.; Nelson, T.; /SLAC; Schier, S.; Schumm, B.; /UC, Santa Cruz

    2012-09-14

    The SiD collaboration is developing a Si-W sampling electromagnetic calorimeter, with anticipated application for the International Linear Collider. Assembling the modules for such a detector will involve special bonding technologies for the interconnections, especially for attaching a silicon detector wafer to a flex cable readout bus. We review the interconnect technologies involved, including oxidation removal processes, pad surface preparation, solder ball selection and placement, and bond quality assurance. Our results show that solder ball bonding is a promising technique for the Si-W ECAL, and unresolved issues are being addressed.

  18. Percepcja klimatu uczenia się w szkole i poczucie zaspokojenia potrzeb a tożsamość uczniów w okresie dorastania

    Directory of Open Access Journals (Sweden)

    Aleksandra Kram

    2014-12-01

    Full Text Available W artykule przedstawiono wyniki badania dotyczącego roli klimatu uczenia się i zaspokajania podstawowych potrzeb psychicznych, w ujęciu teorii autodeterminacji, w kontekście procesu formowania się tożsamości. Badaniu poddano 75 uczniów będących w okresie dorastania (13–20 lat, uczących się w gimnazjach i liceach ogólnokształcących, w których realizowany był tutoring. Posłużono się trzema kwestionariuszami: Kwestionariuszem klimatu uczenia się (LCQ, Skalą podstawowych potrzeb psychicznych (BPNS oraz Skalą wymiarów rozwoju tożsamości (DIDS/PL. Wykazano, że spostrzeganie szkoły jako wspierającej autonomię ucznia oraz zaspokojenie potrzeby autonomii pozwala przewidywać większe natężenie podejmowania zobowiązań oraz identyfikacji z nimi, a niższe – eksploracji ruminacyjnej. Zaspokojenie potrzeby kompetencji okazało się natomiast istotne dla identyfikacji ze zobowiązaniami. Wykazano, że poczucie zaspokojenia potrzeb jest mediatorem pomiędzy klimatem uczenia się a wymiarami tożsamości.

  19. Peculiarities of thermoelectric half-Heusler phase formation in Zr–Co–Sb ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Romaka, V.V., E-mail: romakav@lp.edu.ua [Department of Applied Material Science and Materials Engineering, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Institut für Physikalische Chemie, Universität Wien, Währingerstr. 42, A-1090 Wien (Austria); Romaka, L. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Rogl, P. [Institut für Physikalische Chemie, Universität Wien, Währingerstr. 42, A-1090 Wien (Austria); Stadnyk, Yu. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Melnychenko, N. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Army Academy named after Hetman Petro Sahaydachnyi, Gvardijska Str. 32, 79012 Lviv (Ukraine); Korzh, R.; Duriagina, Z. [Department of Applied Material Science and Materials Engineering, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Horyn, A. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine)

    2014-02-05

    Highlights: • Phase relations for the Zr–Co–Sb system at 500 °C. • Homogeneity region for half-Heusler phase. • The distribution of DOS for Zr{sub 1+x}Co{sub 1−x}Sb predicts transition from semiconductor (x = 0) to metallic (x = 0.13) like behavior. • The existence of the solid solution Zr{sub 5}Co{sub x}Sb{sub 3+y} (x = 0.0–1.0, y = 0.0–1.0). -- Abstract: The phase equilibria in the Zr–Co–Sb ternary system were studied at 873 K by means of X-ray and metallographic analyses in the whole concentration range. The interaction between the elements results the formation of four ternary compounds at investigated temperature: ZrCoSb (MgAgAs-type), Zr{sub 6}CoSb{sub 2} (K{sub 2}UF{sub 6}-type), Zr{sub 5}CoSb{sub 3} (Hf{sub 5}CuSn{sub 3}-type) and Zr{sub 5}Co{sub 0.5}Sb{sub 2.5} (W{sub 5}Si{sub 3}-type). The limited composition Zr{sub 5}CoSb{sub 3} of the solid solution based on the Zr{sub 5}Sb{sub 3−4} binaries is considered as compound with Hf{sub 5}CuSn{sub 3} structure type. The influence of the disordering and defects in the crystal structure of ZrCoSb on the physical properties was analyzed. The performed electronic structure calculations are in good agreement with electrical and magnetic studies.

  20. Synthesis of a Novel Polyethoxysilsesquiazane and Thermal Conversion into Ternary Silicon Oxynitride Ceramics with Enhanced Thermal Stability.

    Science.gov (United States)

    Iwase, Yoshiaki; Horie, Yoji; Daiko, Yusuke; Honda, Sawao; Iwamoto, Yuji

    2017-12-05

    A novel polyethoxysilsesquiazane ([EtOSi(NH) 1.5 ] n , EtOSZ) was synthesized by ammonolysis at -78 °C of ethoxytrichlorosilane (EtOSiCl₃), which was isolated by distillation as a reaction product of SiCl₄ and EtOH. Attenuated total reflection-infra red (ATR-IR), 13 C-, and 29 Si-nuclear magnetic resonance (NMR) spectroscopic analyses of the ammonolysis product resulted in the detection of Si-NH-Si linkage and EtO group. The simultaneous thermogravimetric and mass spectrometry analyses of the EtOSZ under helium revealed cleavage of oxygen-carbon bond of the EtO group to evolve ethylene as a main gaseous species formed in-situ, which lead to the formation at 800 °C of quaternary amorphous Si-C-N with an extremely low carbon content (1.1 wt %) when compared to the theoretical EtOSZ (25.1 wt %). Subsequent heat treatment up to 1400 °C in N₂ lead to the formation of X-ray amorphous ternary Si-O-N. Further heating to 1600 °C in N₂ promoted crystallization and phase partitioning to afford Si₂N₂O nanocrystallites identified by the XRD and TEM analyses. The thermal stability up to 1400 °C of the amorphous state achieved for the ternary Si-O-N was further studied by chemical composition analysis, as well as X-ray photoelectron spectroscopy (XPS) and 29 Si-NMR spectroscopic analyses, and the results were discussed aiming to develop a novel polymeric precursor for ternary amorphous Si-O-N ceramics with an enhanced thermal stability.

  1. Determination and modeling of binary and ternary solid-liquid phase equilibrium for the systems formed by 1,8-dinitronaphthalene and 1,5-dinitronaphthalene and N-methyl-2-pyrrolidone

    International Nuclear Information System (INIS)

    Xie, Yong; Du, Cunbin; Cong, Yang; Wang, Jian; Han, Shuo; Zhao, Hongkun

    2016-01-01

    Highlights: • SLE formed by 1,5 and/or 1,8-dinitronaphthalene and NMP was determined. • The binary and ternary phase diagrams were constructed. • The phase diagrams were correlated and calculated using thermodynamic models. - Abstract: The solubility of 1,8-dinitronaphthalene and 1,5-dinitronaphthalene in N-methyl-2-pyrrolidone at (293.15–343.15) K and the mutual solubility of the ternary 1,5-dinitronaphthalene + 1,8-dinitronaphthalene + N-methyl-2-pyrrolidone mixture at (313.15, 328.15 and 343.15) K were determined experimentally using the isothermal saturation method under atmospheric pressure (101.2 kPa). The solubility of 1,8-dinitronaphthalene in N-methyl-2-pyrrolidone is larger than that of 1,5-dinitronaphthalene. Three isothermal ternary phase diagrams were built according to the measured mutual solubility data. In each ternary phase diagram, there were one co-saturated point, two boundary curves, and three crystalline regions. Two pure solids (pure 1,8-dinitronaphthalene and pure 1,5-dinitronaphthalene) were formed in the ternary system at a given temperature, which were identified by Schreinemaker’s method of wet residue and powder X-ray diffraction (PXRD) pattern. The crystallization region of 1,8-dinitronaphthalene was smaller than that of 1,5-dinitronaphthalene at each temperature. The modified Apelblat equation, λh equation, NRTL model and Wilson model were used to correlate the solubility of 1,8-dinitronaphthalene and 1,5-dinitronaphthalene in N-methyl-2-pyrrolidone; and the NRTL and Wilson models were employed to correlate and calculate the mutual solubility for the ternary 1,5-dinitronaphthalene + 1,8-dinitronaphthalene + N-methyl-2-pyrrolidone system. The largest value of root-mean-square deviation (RMSD) was 20.34 × 10 −4 for the binary systems; and 7.38 × 10 −3 for ternary system. The calculated results via these models are all acceptable for the binary and ternary solid-liquid phase equilibrium.

  2. Thermodynamic modeling of the Ti-Al-Cr ternary system

    International Nuclear Information System (INIS)

    Chen Leyi; Qiu Aitao; Liu Lanjie; Jiang Ming; Lu Xionggang; Li Chonghe

    2011-01-01

    Research highlights: → The full experimental results of the Ti-Al-Cr ternary system and its sub-binary systems are reviewed and analysed in detail. → Based on the latest thermodynamic assessments of the Ti-Al, Ti-Cr and Al-Cr systems and the ternary experimental data in literature, the thermodynamic parameters of the Ti-Al-Cr ternary system are fully assessed by the Calphad method. → The transformation of disorder to order (bcc a 2 to B2) and the new ternary compound L 12T i 25 Cr 8 Al 67 are considered in this work. - Abstract: The Ti-Al-Cr ternary system is one of the most important systems to studying the titanium alloys. Some experimental data of this ternary system are available and a few partial thermodynamic assessments are reported. However, no full thermodynamic descriptions were published. In this study, the previous work on the Ti-Al-Cr system and its related binary systems are reviewed. Based on the thermodynamic descriptions of the Ti-Al, Ti-Cr and Al-Cr systems and the ternary experimental data in literature, the Ti-Al-Cr ternary system is assessed by means of the Calphad method. Several isothermal sections from 1073 K to 1573 K and some invariant reactions are calculated, which are in good agreement with the most of the experimental results.

  3. Dissolution rate enhancement of the poorly water-soluble drug Tibolone using PVP, SiO2, and their nanocomposites as appropriate drug carriers.

    Science.gov (United States)

    Papadimitriou, Sofia; Bikiaris, Dimitrios

    2009-09-01

    Creation of immediate release formulations for the poorly water-soluble drug Tibolone through the use of solid dispersions (SDs). SD systems of Tibolone (Tibo) with poly(vinylpyrrolidone) (PVP), fumed SiO(2) nanoparticles, and their corresponding ternary systems (PVP/SiO(2)/Tibo) were prepared and studied in order to produce formulations with enhanced drug dissolution rates. The prepared SDs were characterized by the use of differential scanning calorimetry and wide-angle X-ray diffractometry techniques. Also dissolution experiments were performed. From the results it was concluded that PVP as well as SiO(2) can be used as appropriate carriers for the amorphization of Tibo, even when the drug is used at high concentrations (20-30%, w/w). This is due to the evolved interactions taking place between the drug and the used carriers, as was verified by Fourier transform infrared spectroscopy. At higher concentrations the drug was recrystallized. Similar are the observations on the ternary PVP/SiO(2)/Tibo SDs. The dissolution profiles of the drug in PVP/Tibo and SiO(2)/Tibo SDs are directly dependent on the physical state of the drug. Immediately release rates are observed in SD with low drug concentrations, in which Tibo was in amorphous state. However, these release profiles are drastically changed in the ternary PVP/SiO(2)/Tibo SDs. An immediate release profile is observed for low drug concentrations and an almost sustained release as the concentration of Tibo increases. This is due to the weak interactions that take place between PVP and SiO(2), which result in alterations of the characteristics of the carrier (PVP/SiO(2) nanocomposites). Immediate release formulation was created for Tibolone as well as new nanocomposite matrices of PVP/SiO((2)), which drastically change the release profile of the drug to a sustained delivery.

  4. 450 {sup o}C isothermal section of the Fe-Zn-Si ternary phase diagram

    Energy Technology Data Exchange (ETDEWEB)

    Su, Xuping [Inst. of Materials Research, School of Mechanical Engineering, Xiangtan Univ., Xiangtan, Hunan (China); Univ. of Toronto, Dept. of Materials Science and Engineering, Toronto, Ontario (Canada); Tang, Nai-Yong [Cominco Ltd., Product Technology Centre, Mississauga, Ontario (Canada); Toguri, J.M. [Univ. of Toronto, Dept. of Materials Science and Engineering, Toronto, Ontario (Canada)

    2001-07-01

    The 450 {sup o}C isothermal section of the Fe-Zn-Si ternary phase diagram has been determined experimentally using optical microscopy, scanning electron microscopy (SEM) coupled with energy dispersive X-ray spectroscopy (EDS) and X-ray diffractometry. The focus of the work has been concentrated on the Zn-rich corner which is relevant to general galvanizing. The present study has confirmed the existence of the equilibrium state between the liquid, the {zeta} phase and the FeSi phase. This three phase equilibrium state prevents the equilibrium between the liquid and the {delta} phase suggested by some researchers. Experimental results indicate that Si solubility in all four binary Zn-Fe compounds is limited. The Fe solubility in molten Zn was found to decrease with increasing Si content in the melt. The liquid phase boundary was determined using a model based phenomenological approach. (author)

  5. Analiza funkcjonowania systemów ABCw przedsiębiorstwach działających w Polsce

    Directory of Open Access Journals (Sweden)

    Tomasz Wnuk-Pel

    2009-06-01

    Full Text Available Celem niniejszego artykułu jest analiza stanu rozpowszechnienia rachunku kosztów działań w przedsiębiorstwach w Polsce, w szczególności zaś analiza problemów pojawiających się w procesie wdrożenia, struktury systemów ABC oraz sposobów wykorzystania informacji z systemów rachunku kosztów działań. Wnioski z przeprowadzonych badań mają znaczenie zarówno teoretyczne, jak i praktyczne. Z praktycznego punktu widzenia, przedsiębiorstwa rozważające implementację ABC w przyszłości powinny mieć świadomość czynników wpływających na implementację ABC, jak również problemów, które mogą się w procesie implementacji pojawić. Menedżerowie rozważający implementację ABC muszą zdawać sobie sprawę z poziomu szczegółowości i sposobów budowy systemu informacyjnego rachunku kosztów działań. Mogą oni również skorzystać z wiedzy o sposobach wykorzystania informacji z systemów rachunku kosztów działań. Wiedza ta może sprzyjać podejmowaniu lepszych decyzji dotyczących implementacji systemów ABC, a jeżeli decyzja o implementacji zostanie podjęta, może się przyczynić do zwiększenia prawdopodobieństwa zakończenia procesu wdrożenia sukcesem. Z teoretycznego punktu widzenia, przeprowadzone badania mogą się przyczynić do określenia ogólnej tendencji: modyfikacje systemów rachunku kosztów w przedsiębiorstwach w Polsce oraz wdrażanie nowoczesnych metod rachunkowości zarządczej, takich jak ABC, zmierza w podobnym kierunku jak praktyka rachunkowości zarządczej na świecie.

  6. Thermodynamic optimization of the (Na2O + SiO2 + NaF + SiF4) reciprocal system using the Modified Quasichemical Model in the Quadruplet Approximation

    International Nuclear Information System (INIS)

    Lambotte, Guillaume; Chartrand, Patrice

    2011-01-01

    Highlights: → We model the Na 2 O-SiO 2 -NaF-SiF 4 reciprocal system based on a comprehensive review of all available experimental data. → The assessment includes Na 2 O-SiO 2 and NaF-SiF 4 binary systems. → Improvements to the Modified Quasichemical Model in the Quadruplet Approximation are presented. → The very strong short-range ordering among first-nearest and second-nearest neighbors in this system is reproduced. → This work constitutes the first assessment for all compositions and temperatures of a reciprocal oxyfluoride system. - Abstract: All available thermodynamic and phase diagram data for the condensed phases of the ternary reciprocal system (NaF + SiF 4 + Na 2 O + SiO 2 ) have been critically assessed. Model parameters for the unary (SiF 4 ), the binary systems and the ternary reciprocal system have been found, which permit to reproduce the most reliable experimental data. The Modified Quasichemical Model in the Quadruplet Approximation was used for the oxyfluoride liquid solution, which exhibits strong first-nearest-neighbor and second-nearest-neighbor short-range ordering. This thermodynamic model takes into account both types of short-range ordering as well as the coupling between them. Model parameters have been estimated for the hypothetical high-temperature liquid SiF 4 .

  7. Strong composition-dependence on glass-forming ability in Ni-(Ti,Zr)-Si pseudo-ternary alloys

    International Nuclear Information System (INIS)

    Yang, H.; Wang, J.Q.; Li, Y.

    2006-01-01

    The glass formation in Ni-(Ti,Zr)-Si pseudo-ternary alloys was studied. For suction casting, by carefully adjusting the alloy composition and studying the microstructure changes, the best glass-forming alloy with a 2 mm diameter is pinpointed in a narrow composition region of 57.5-58.5 at.% Ni, 36.5-38.5 at.% (Ti + Zr) and 5-5.5 at.% Si. The main competing crystalline phases, identified by XRD and SEM, were Ni 10 (Zr,Ti) 7 , Ni(Ti,Zr) and an unidentified Si-containing phase. Our results indicate a clear need for monitoring the microstructure change in the cross section of the ingots to locate the best glass-forming alloys

  8. Solid-state reactions during mechanical alloying of ternary Fe–Al–X (X=Ni, Mn, Cu, Ti, Cr, B, Si) systems: A review

    Energy Technology Data Exchange (ETDEWEB)

    Hadef, Fatma, E-mail: hadef77@yahoo.fr [Laboratoire de Recherche sur la Physico-Chimie des Surfaces et Interfaces, LRPCSI, Université 20 Août 1955, BP 26, Route d’El-Haddaiek, Skikda 21000 (Algeria); Département de Physique, Faculté des Sciences, Université 20 Août 1955, BP 26, Route d’El-Haddaiek, Skikda 21000 (Algeria)

    2016-12-01

    The last decade has witnessed an intensive research in the field of nanocrystalline materials due to their enhanced properties. A lot of processing techniques were developed in order to synthesis these novel materials, among them mechanical alloying or high-energy ball milling. In fact, mechanical alloying is one of the most common operations in the processing of solids. It can be used to quickly and easily synthesize a variety of technologically useful materials which are very difficult to manufacture by other techniques. One advantage of MA over many other techniques is that is a solid state technique and consequently problems associated with melting and solidification are bypassed. Special attention is being paid to the synthesis of alloys through reactions mainly occurring in solid state in many metallic ternary Fe–Al–X systems, in order to improve mainly Fe–Al structural and mechanical properties. The results show that nanocrystallization is the common result occurring in all systems during MA process. The aim of this work is to illustrate the uniqueness of MA process to induce phase transformation in metallic Fe–Al–X (X=Ni, Mn, Cu, Ti, Cr, B, Si) systems. - Highlights: • A review of state of the art on binary Fe–Al alloys was presented. • Structural and microstructural properties of MA ternary Fe–Al–X alloys were summerized. • MA process is a powerful tool for producing metallic alloys at the nanometer scale.

  9. Phase formation in Mg-Sn-Si and Mg-Sn-Si-Ca alloys

    Energy Technology Data Exchange (ETDEWEB)

    Kozlov, A.; Groebner, J. [Institute of Metallurgy, Clausthal University of Technology, Robert-Koch-Str. 42, D-38678 Clausthal-Zellerfeld (Germany); Schmid-Fetzer, R., E-mail: schmid-fetzer@tu-clausthal.de [Institute of Metallurgy, Clausthal University of Technology, Robert-Koch-Str. 42, D-38678 Clausthal-Zellerfeld (Germany)

    2011-02-17

    Research highlights: > The solidification paths of ternary and quaternary alloys are analyzed in detail, using the tool of thermodynamic calculations. > The precipitation sequence of phases and their amounts compare well with the microstructure of alloys. > The most efficient comparison to the experimental thermal analysis data is done by calculation of the enthalpy variation with temperature. > The viability of a procedure for the selection of multicomponent key samples is demonstrated for the development of the Mg-Ca-Si-Sn phase diagram. - Abstract: Experimental work is done and combined with the Calphad method to generate a consistent thermodynamic description of the Mg-Ca-Si-Sn quaternary system, validated for Mg-rich alloys. The viability of a procedure for the selection of multicomponent key samples is demonstrated for this multicomponent system. Dedicated thermal analysis with DTA/DSC on sealed samples is performed and the microstructure of slowly solidified alloys is analyzed using SEM/EDX. The thermodynamic description and phase diagram of the ternary Mg-Si-Sn system, developed in detail also in this work, deviates significantly from a previous literature proposal. The phase formation in ternary and quaternary alloys is analyzed using the tool of thermodynamic equilibrium and Scheil calculations for the solidification paths and compared with present experimental data. The significant ternary/quaternary solid solubilities of pertinent intermetallic phases are quantitatively introduced in the quaternary Mg-Ca-Si-Sn phase diagram and validated by experimental data.

  10. Enhanced Dissolution of a Porous Carrier-Containing Ternary Amorphous Solid Dispersion System Prepared by a Hot Melt Method.

    Science.gov (United States)

    Hanada, Masataka; Jermain, Scott V; Williams, Robert O

    2018-01-01

    The focus of our study was to employ a solvent-free, thermal process to evaluate the use of a porous carrier in a drug-polymer-porous carrier ternary formulation containing a high drug load (e.g., ≥50% w/w). The purpose of the study was to improve the dissolution properties of the biopharmaceutical classification system class II drug, indomethacin, in the ternary formulation. The effect that the selected polymer has on properties of the formulation was studied, and the formulation characteristics of hypromellose (AF15), copovidone (VA64), and polyvinyl alcohol-polyethylene glycol graft copolymer was evaluated to understand differences in dissolution rates and drug adsorption onto the porous carrier. The ternary formulations were manufactured using a thermal technique that relied on heating and mixing, without the necessity of mechanical shear. All thermally processed granules that employed the porous carrier exhibited immediate release compared with crystalline indomethacin and physical mixtures. In addition, the ternary formulations maintained supersaturation compared with the binary formulations without polymer. The results of this study indicated that the thermally processed ternary formulations containing a porous carrier demonstrated a much improved dissolution profile in nonsink conditions. Copyright © 2018 American Pharmacists Association®. Published by Elsevier Inc. All rights reserved.

  11. Balancing Accuracy and Computational Efficiency for Ternary Gas Hydrate Systems

    Science.gov (United States)

    White, M. D.

    2011-12-01

    phase transitions. This paper describes and demonstrates a numerical solution scheme for ternary hydrate systems that seeks a balance between accuracy and computational efficiency. This scheme uses a generalize cubic equation of state, functional forms for the hydrate equilibria and cage occupancies, variable switching scheme for phase transitions, and kinetic exchange of hydrate formers (i.e., CH4, CO2, and N2) between the mobile phases (i.e., aqueous, liquid CO2, and gas) and hydrate phase. Accuracy of the scheme will be evaluated by comparing property values and phase equilibria against experimental data. Computational efficiency of the scheme will be evaluated by comparing the base scheme against variants. The application of interest will the production of a natural gas hydrate deposit from a geologic formation, using the guest molecule exchange process; where, a mixture of CO2 and N2 are injected into the formation. During the guest-molecule exchange, CO2 and N2 will predominately replace CH4 in the large and small cages of the sI structure, respectively.

  12. Crystallization features of ternary reversible reciprocal systems

    International Nuclear Information System (INIS)

    Tomashik, V.N.; Shcherbak, L.P.; Fejchuk, P.I.; Grytsiv, V.I.

    2006-01-01

    Some features of the primary crystallization of phases in ternary reversible reciprocal system are considered and discussed. The diagonal join CdTe-GeSe of the CdTe + GeSe = CdSe + GeTe ternary reciprocal system is studied to show that the features in primary and secondary heating and cooling curves in such systems under fully equilibrium conditions are not reproduced upon consecutive heating and cooling sessions, because of the existence of different amounts of the reagents and the reaction products in the mixture; the temperatures of each transformation lie in a range. Those who experimentally investigate other ternary and more complex reversible reciprocal systems should take this fact into account [ru

  13. Production of barium molybdate and tungstate on the base of ternary reciprocal Na, Ba long Cl, EhO4 (Eh - Mo, W) systems

    International Nuclear Information System (INIS)

    Garkushin, I.K.; Sechnoj, A.I.; Dibirov, M.A.; Trunin, A.S.

    1984-01-01

    Possibilities of the syntnesis of barium molybdate and tungstate on the base of ternary reciprocal Na, Ba parallel Cl, EhO 4 (Eh=Mo, W) system state diagrams are under study. It is shown that on the basis of these reciprocal state diagrams syntnesis of not only BaO 4 but also of other suhstances is possible. Purity of obtained chemical agents is basically dependent on qualification of initial components. Synthesis temperature is decreased and time is reduced as compared to other known methods. For substance synthesis, state diagrams examination (reaction type confirmation and component crystallization fields separation from compound crystallization fields) is necessary along with the calculation of the conventional thermochemical effect

  14. 300C/15 kW power converter with AlGaN/GaN-Si MOS-HFETs for electric propulsion systems, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Capitalizing on a strong expertise in III-Nitride epitaxy, GaN-Si power device designs, and wide-bandgap power electronics, researchers at GeneSiC Semiconductor...

  15. The Prognosis of the Phase Equilibrium Diagram of the System Al-Cu-Si

    Directory of Open Access Journals (Sweden)

    Florentina Cziple

    2007-10-01

    Full Text Available The paper presents a model for establishing the mathematical functions of the liquidus and solidus curves, from the binary diagrams Al-Si, Si-Cu, Cu-Al and their use in the prognosis of the phase equilibrium diagram from the ternary system Al-Cu-Si. We have studied the model of the non-ideal liquid solution of the regular type. The calculus and graphic plotting of the equations for the binary systems has been performed on the computer

  16. A Computationally Efficient Equation of State for Ternary Gas Hydrate Systems

    Science.gov (United States)

    White, M. D.

    2012-12-01

    the production of geologic accumulations of gas hydrates have historically suffered from relatively slow execution times, compared with other multifluid, porous media systems, due to strong nonlinearities and phase transitions. The phase equilibria for the ternary gas hydrate system within the gas hydrate stability range of composition, temperature and pressure, includes regions where the gas hydrate is in equilibrium with gas, nonaqueous liquid, or mixtures of gas and nonaqeuous liquid near the CO2-CH4-N2 mixture critical point. In these regions, solutions to cubic equations of state can be nonconvergent without accurate initial guesses. A hybrid tabular-cubic equation of state is described which avoids convergence issues, but conserves the characteristics and advantages of the cubic equation of state approaches to phase equilibria calculations. The application of interest will be the production of a natural gas hydrate deposit from a geologic formation, using the guest molecule exchange process; where, a mixture of CO2 and N2 are injected into the formation. During the guest-molecule exchange, CO2 and N2 will predominately replace CH4 in the large and small cages of the sI structure, respectively.

  17. A high-throughput search for new ternary superalloys

    Science.gov (United States)

    Nyshadham, Chandramouli; Hansen, Jacob; Oses, Corey; Curtarolo, Stefano; Hart, Gus

    In 2006 an unexpected new superalloy, Co3[Al,W], was discovered. This new alloy is cobalt-based, in contrast to conventional superalloys, which are nickel-based. Inspired by this new discovery, we performed first-principles calculations, searching through 2224 ternary metallic systems of the form A3[B0.5C0.5], where A = Ni/Co/Fe and [B, C] = all binary combinations of 40 different elements chosen from the periodic table. We found 175 new systems that are better than the Co3[Al, W] superalloy. 75 of these systems are brand new--they have never been reported in experimental literature. These 75 new potential superalloys are good candidates for further experiments. Our calculations are consistent with current experimental literature where data exists. Work supported under: ONR (MURI N00014-13-1-0635).

  18. Thermodynamic description of the Al–Mg–Si system using a new formulation for the temperature dependence of the excess Gibbs energy

    International Nuclear Information System (INIS)

    Tang, Ying; Du, Yong; Zhang, Lijun; Yuan, Xiaoming; Kaptay, George

    2012-01-01

    Highlights: ► An exponential formulation to describe ternary excess Gibbs energy is proposed. ► Theoretical analysis is performed to verify stability of phase using new formulation. ► Al–Mg–Si system and its boundary binaries have been assessed by the new formulation. ► Present calculations for Al–Mg–Si system are more reasonable than previous ones. - Abstract: An exponential formulation was proposed to replace the linear interaction parameter in the Redlich–Kister (R–K) polynomial for the excess Gibbs energy of ternary solution phase. The theoretical analysis indicates that the proposed new exponential formulation can not only avoid the artificial miscibility gap at high temperatures but also describe the ternary system well. A thermodynamic description for the Al–Mg–Si system and its boundary binaries was then performed by using both R–K linear and exponential formulations. The inverted miscibility gaps occurring in the Mg–Si and the Al–Mg–Si systems at high temperatures due to the use of R–K linear polynomials are avoided by using the new formulation. Besides, the thermodynamic properties predicted with the new formulation confirm the general thermodynamic belief that the solution phase approaches to the ideal solution at infinite temperatures, which cannot be described with the traditional R–K linear polynomials.

  19. Investigations of the ternary system beryllium-carbon-tungsten and analyses of beryllium on carbon surfaces; Untersuchung des ternaeren Systems Beryllium-Kohlenstoff-Wolfram und Betrachtungen von Beryllium auf Kohlenstoffoberflaechen

    Energy Technology Data Exchange (ETDEWEB)

    Kost, Florian

    2009-05-25

    Beryllium, carbon and tungsten are planned to be used as first wall materials in the future fusion reactor ITER. The aim of this work is a characterization of mixed material formation induced by thermal load. To this end, model systems (layers) were prepared and investigated, which give insight into the basic physical and chemical concepts. Before investigating ternary systems, the first step was to analyze the binary systems Be/C and Be/W (bottom-up approach), where the differences between the substrates PG (pyrolytic graphite) and HOPG (highly oriented pyrolytic graphite) were of special interest. Particularly X-ray photoelectron spectroscopy (XPS), low energy ion scattering (ISS) and Rutherford backscattering spectroscopy (RBS) were used as analysis methods. Beryllium evaporated on carbon shows an island growth mode, whereas a closed layer can be assumed for layer thicknesses above 0.7 nm. Annealing of the Be/C system induces Be{sub 2}C island formation for T{>=}770 K. At high temperatures (T{>=}1170 K), beryllium carbide dissociates, resulting in (metallic) beryllium desorption. For HOPG, carbide formation starts at higher temperatures compared to PG. Activation energies for the diffusion processes were determined by analyzing the decreasing beryllium amount versus annealing time. Surface morphologies were characterized using angle-resolved XPS (ARXPS) and atomic force microscopy (AFM). Experiments were performed to study processes in the Be/W system in the temperature range from 570 to 1270 K. Be{sub 2}W formation starts at 670 K, a complete loss of Be{sub 2}W is observed at 1170 K due to dissociation (and subsequent beryllium desorption). Regarding ternary systems, particularly Be/C/W and C/Be/W were investigated, attaching importance to layer thickness (reservoir) variations. At room temperature, Be{sub 2}C, W{sub 2}C, WC and Be{sub 2}W formation at the respective interfaces was observed. Further Be{sub 2}C is forming with increasing annealing temperatures

  20. di Synthesis and Characterization of the Platinum-Substituted Keggin Anion alpha-H2SiPtW11O404-

    Energy Technology Data Exchange (ETDEWEB)

    Klonowski, P; Goloboy, JC; Uribe-Romo, FJ; Sun, FR; Zhu, LY; Gandara, F; Wills, C; Errington, RJ; Yaghi, OM; Klemperer, WG

    2014-12-15

    Acidification of an aqueous solution of K8SiW11O39 and K2Pt(OH)(6) to pH 4 followed by addition of excess tetramethylammonium (TMA) chloride yielded a solid mixture of TMA salts of H2SiPtW11O404- (1) and SiW12O404- (2). The former was separated from the latter by extraction into an aqueous solution and converted into tetra-n-butylammonium (TBA) and potassium salts TBA-1 and K-1. The a-H2SiPtW11O404- was identified as a monosubstituted Keggin anion using elemental analysis, IR spectroscopy, X-ray crystallography, electrospray ionization mass spectrometry, Pt-195 NMR spectroscopy, (183)W NMR spectroscopy, and W-183-W-183 2D INADEQUATE NMR spectroscopy. Both TBA-1 and K-1 readily cocrystallized with their unsubstituted Keggin anion salts, TBA-2 and K-2, respectively, providing an explanation for the historical difficulty of isolating certain platinum-substituted heteropolyanions in pure form.

  1. Atomic layer deposition of W - based layers on SiO2

    NARCIS (Netherlands)

    van Nieuwkasteele-Bystrova, Svetlana Nikolajevna; Holleman, J.; Wolters, Robertus A.M.; Aarnink, Antonius A.I.

    2003-01-01

    W> and W1-xNx , where x= 15- 22 at%, thin films were grown using the ALD (Atomic Layer Deposition) principle. Growth rate of W> films is about 4- 5 monolayers/ cycle at 300- 350 ºC. Growth rate of W1-xNx is 0.5 monolayer/cycle at 325- 350 ºC. Standard Deviation (STDV) of thickness is about 2%

  2. Swift heavy-ion induced trap generation and mixing at Si/SiO{sub 2} interface in depletion n-MOS

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N. [Ecotopia Science Institute, Division of Energy Science, Nagoya University, Nagoya 464-8603 (Japan) and Department of Physics, University of Pune, Pune 411 007 (India)]. E-mail: nss@nucl.nagoya-u.ac.jp; Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411 007 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 411 007 (India)

    2006-01-15

    Large channel depletion n-channel MOSFET (Metal oxide semiconductor field effect transistor) is a basic Si-SiO{sub 2} structure to understand irradiation-induced modifications. The contribution of interface and oxide states denoted as {delta}N {sub IT} and {delta}N {sub OT}, respectively, was separated out by using I {sub D}-V {sub DS}, I {sub D}-V {sub GS} measurements. The threshold voltage shift {delta}V {sub T} (V {sub T-irrad} - V {sub T-virgin}) increased for all ions (50 MeV Li, B, F, P and Ni) over the fluence of 2 x 10{sup 11}-2 x 10{sup 13} ions/cm{sup 2}. The increase in {delta}N {sub IT} was associated to trap generation at Si-SiO{sub 2} interface, but a small change in {delta}N {sub OT} indicate less charge trapping in oxide. The electronic energy loss S {sub e} induced increase in {delta}N {sub IT} is not adequate to explain the large shift in threshold voltage. A rough estimate shows that the channel width, W should decrease by 40% for a large increase in {delta}N {sub IT}. Thus, the possible factor affecting reduction of W may be ion beam mixing induced broadening of Si-SiO{sub 2} interface.

  3. A Structural Study on the Foaming Behavior of CaO-SiO2-MO (MO = MgO, FeO, or Al2O3) Ternary Slag System

    Science.gov (United States)

    Park, Youngjoo; Min, Dong Joon

    2017-12-01

    The foaming index of the CaO-SiO2-MO (MO = MgO, FeO, or Al2O3) ternary slag system with a fixed CaO/SiO2 ratio is measured to understand the effect of the ionic structure. At 1773 K (1500 °C), the foaming index of the slag increases with Al2O3 addition and decreases with MgO or FeO addition at a fixed CaO/SiO2 ratio. It is verified that the previous correlation between the foaming index and the physical properties could also be valid for the CaO-SiO2-(MgO or Al2O3) system. Raman spectroscopy for the CaO/SiO2 = 1.0 slag is applied to explain the foaming behavior from an ionic structural perspective. From the ionic structural viewpoint, the fractional change in each silicate anion unit is identified by de-convoluted Raman spectra. The Raman spectra indicate that the silicate network structure is polymerized with Al2O3 as an aluminosilicate structure; in contrast, de-polymerization occurs by MgO or FeO addition. Furthermore, the relationship between the silicate structure and the thermodynamic stability function is discussed. Since the ionic structure of the molten slag affects various physical/thermodynamic properties, the foaming behavior could be successfully interpreted from the ionic structural viewpoint.

  4. Capping Layer (CL) Induced Antidamping in CL/Py/β-W System (CL: Al, β-Ta, Cu, β-W).

    Science.gov (United States)

    Behera, Nilamani; Guha, Puspendu; Pandya, Dinesh K; Chaudhary, Sujeet

    2017-09-13

    For achieving ultrafast switching speed and minimizing dissipation losses, the spin-based data storage device requires a control on effective damping (α eff ) of nanomagnetic bits. Incorporation of interfacial antidamping spin orbit torque (SOT) in spintronic devices therefore has high prospects for enhancing their performance efficiency. Clear evidence of such an interfacial antidamping is found in Al capped Py(15 nm)/β-W(t W )/Si (Py = Ni 81 Fe 19 and t W = thickness of β-W), which is in contrast to the increase of α eff (i.e., damping) usually associated with spin pumping as seen in Py(15 nm)/β-W(t W )/Si system. Because of spin pumping, the interfacial spin mixing conductance (g ↑↓ ) at Py/β-W interface and spin diffusion length (λ SD ) of β-W are found to be 1.63(±0.02) × 10 18 m -2 (1.44(±0.02) × 10 18 m -2 ) and 1.42(±0.19) nm (1.00(±0.10) nm) for Py(15 nm)/β-W(t W )/Si (β-W(t W )/Py(15 nm)/Si) bilayer systems. Other different nonmagnetic capping layers (CL), namely, β-W(2 nm), Cu(2 nm), and β-Ta(2,3,4 nm) were also grown over the same Py(15 nm)/β-W(t W ). However, antidamping is seen only in β-Ta(2,3 nm)/Py(15 nm)/β-W(t W )/Si. This decrease in α eff is attributed to the interfacial Rashba like SOT generated by nonequilibrium spin accumulation subsequent to the spin pumping. Contrary to this, when interlayer positions of Py(15 nm) and β-W(t W ) is interchanged irrespective of the fixed top nonmagnetic layer, an increase of α eff is observed, which is ascribed to spin pumping from Py to β-W layer.

  5. Phase stability in the Nb-rich region of the Nb-B-Si system

    Energy Technology Data Exchange (ETDEWEB)

    Nunes, C.A.; Coelho, G.C.; Pinto, D.M. Jr.; Camargo Gandolpho, K.C. de; Borges, L.A. Jr.; Rodrigues, G. [Polo Urbo-Ind., Gleba, Lorena (Brazil). Dept. de Engenharia de Materiais

    2000-07-01

    Alloys of the Me-B-Si systems (Me-refractory metal) have been evaluated due to their potential for use as high temperature structural materials (T>1400 C). In the present study, the phase stability in the Nb-rich region of the Nb-B-Si system has been evaluated in terms of the current information associated to the Nb-Si, Nb-B and Nb-B-Si systems as well as our own data. For the experiments several as-cast and heat-treated alloys of the Nb-B and Nb-B-Si systems were investigated by X-ray diffraction and scanning electron microscopy. Concerning the Nb-B system the results indicated the existence of the eutectic reaction L ({proportional_to} 16 at%B) <=> Nb{sub ss}+NbB. The Nb{sub 3}B{sub 2} phase was not observed in the microstructure of as-cast alloys with composition in the range of 0 to 50 at%B. The analysis of heat-treated ternary alloys at 1600 C and 1750 C confirmed the existence of the Nb{sub ss}+T{sub 2} two-phase field at those temperatures. This T{sub 2}-phase is isomorphous of the {alpha}Nb{sub 5}Si{sub 3} and is formed through the partial substitution of Si atomos for B atoms in the lattice of the {alpha}Nb{sub 5}Si{sub 3}-phase. All ternary alloys prepared in the present study presented either Nb{sub ss} or T{sub 2} primary phases in the as-cast microstructures. In addition, those alloys presented an eutectic-like microstructure formed by the Nb{sub ss} and T{sub 2} phases in the interdendritic region. (orig.)

  6. Isothermal section of the Ti-Si-B system at 1250 ° C in the Ti-TiSi2-TiB2 region

    OpenAIRE

    Ramos, Alfeu Saraiva; Baldan, Renato; Nunes, Carlos Angelo; Coelho, Gilberto Carvalho; Suzuki, Paulo Atsushi; Rodrigues, Geovani

    2013-01-01

    A partial isothermal section (Ti-TiSi2-TiB2 region) of the ternary Ti-Si-B system at 1250 ° C was determined from heat-treated alloys prepared via arc melting. Microstructural characterization has been carried out through scanning electron microscopy (SEM), x-ray diffraction (xRD) and wavelength dispersive spectrometry (WDS). The results have shown the stability of the near stoichiometric Ti6Si2B phase and a negligible solubility of boron in the Ti-silicides as well as of Si in the Ti-borides...

  7. The reduction of the change of secondary ions yield in the thin SiON/Si system

    International Nuclear Information System (INIS)

    Sameshima, J.; Yamamoto, H.; Hasegawa, T.; Nishina, T.; Nishitani, T.; Yoshikawa, K.; Karen, A.

    2006-01-01

    For the analyses of gate insulating materials of thin silicon oxy-nitride (SiON) and dielectric films, SIMS is one of the available tool along with TEM and ESCA, etc. Especially, to investigate the distribution of dopant in the thin films, SIMS is appreciably effective in these techniques because of its depth profiling capability and high sensitivity. One of the problem occurring in this SIMS measurement is the change of secondary ion yield at the interface as well as in the layers with different chemical composition. To solve this problem, some groups have researched the phenomenon for SiO 2 /Si interface [W. Vandervorst, T. Janssens, R. Loo, M. Caymax, I. Peytier, R. Lindsay, J. Fruhauf, A. Bergmaier, G. Dollinger, Appl. Surf. Sci. 203-204 (2003) 371-376; S. Hayashi, K.Yanagihara, Appl. Surf. Sci. 203-204 (2003) 339-342; M. Barozzi, D. Giubertoni, M.Anderle, M. Bersani, Appl. Surf. Sci. 231-232 (2004) 632-635; T.H. Buyuklimanli, J.W. Marino, S.W. Novak, Appl. Surf. Sci. 231-232 (2004) 636-639]. In the present study, profiles of boron and matrix elements in the Si/SiON layers on Si substrate have been investigated. The sensitivity change of Si and B profiles in SiON layer become smaller by using oxygen flood than those without oxygen flood for both O 2 + and Cs + beam. At the range of 0-25 at.% of N composition, 11 B dosimetry in SiON layer implanted through amorphous Si depends on N composition. This trend could be caused by the sensitivity change of 11 B, or it indicates real 11 B concentration change in SiON lyaer. N areal density determined by Cs + SIMS with oxygen flooding also shows linear relationship with N composition estimated by XPS

  8. Fusibility diagram of ternary system with incongruently melting double compound

    International Nuclear Information System (INIS)

    Lutsyk, V.I.; Vorob'eva, V.P.; Sumkina, O.G.

    1989-01-01

    Temperature calculation and properties of ternary eutectics and concentration coordinates of ternary peritectics accoriding to the linear model of initial crystallization surfaces as an element of the expert system for simulating fusibility diagrams of ternary systems is considered. It is shown that the calculated and experimental data on coordinates of ternary nonvariant points in the systems NaCl-PbCl 2 -CdCl 2 , PbCl 2 -CaCl 2 -UCl 4 , CaF 2 -NaF-CsF and UCl 3 -CaCl 2 -ThCl 4 are in good agreement

  9. W and WSix Ohmic contacts on p- and n-type GaN

    International Nuclear Information System (INIS)

    Cao, X.A.; Ren, F.; Pearton, S.J.; Zeitouny, A.; Eizenberg, M.; Zolper, J.C.; Abernathy, C.R.; Han, J.; Shul, R.J.; Lothian, J.R.

    1999-01-01

    W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000 degree C. There is minimal reaction (≤100 Angstrom broadening of the metal/GaN interface) even at 1000 degree C. Specific contact resistances in the 10 -5 Ω cm 2 range are obtained for WSi x on Si-implanted GaN with a peak doping concentration of ∼5x10 20 cm -3 , after annealing at 950 degree C. On p-GaN, leaky Schottky diode behavior is observed for W, WSi x and Ni/Au contacts at room temperature, but true Ohmic characteristics are obtained at 250 - 300 degree C, where the specific contact resistances are, typically, in the 10 -2 Ω cm 2 range. The best contacts for W and WSi x are obtained after 700 degree C annealing for periods of 30 - 120 s. The formation of β-W 2 N interfacial phases appear to be important in determining the contact quality. copyright 1999 American Vacuum Society

  10. Preparation, characterization, and luminescence properties of dysprosium perchlorate with MABA-Si and phen or dipy complexes as well as SiO{sub 2}@Dy(MABA-Si)L core-shell structure nanometermeter luminescent composites

    Energy Technology Data Exchange (ETDEWEB)

    Li, Wen-Xian, E-mail: nmglwx@163.com [College of Chemistry and Chemical Engineering, Inner Mongolia University, Hohhot 010021 (China); Zheng, Yu-Shan [Inner Mongolia Autonomous Region Product Quality Inspection Institute, Hohhot 010010 (China); Cao, Xiao-fang; Bai, Juan; Fu, Zhi-Fang; Bao, Jin-Rong; Li, Yi-Lian [College of Chemistry and Chemical Engineering, Inner Mongolia University, Hohhot 010021 (China)

    2016-10-15

    Two novel ternary rare earth complexes Dy(MABA-Si)·L{sub 2}(ClO{sub 4}){sub 3}·2H{sub 2}O (L= Phen or Dipy) were prepared using HOOCC{sub 6}H{sub 4}N(CONH(CH{sub 2}){sub 3}Si-(OCH{sub 2}CH{sub 3}){sub 3}){sub 2} which was abbreviated or denoted as MABA-Si. MABA-Si was the first ligand, L was the second ligand. The corresponding two SiO{sub 2}@Dy(MABA-Si)L nanometermeter luminescent composites were synthesized as well, and the silica spheres is the core, and the ternary rare earth complex Dy(MABA-Si)·L{sub 2}(ClO{sub 4}){sub 3}·2H{sub 2}O was the shell layer, who was abbreviated or denoted as Dy((MABA-Si)L). The ternary complexes have been characterized by element analysis, molar conductivity, IR spectra and {sup 1}HNMR spectra. The results showed that the chemical formula of the complex was Dy(MABA-Si)·L{sub 2}(ClO{sub 4}){sub 3}·2H{sub 2}O. The fluorescent spectra illustrated that the complexes displayed its characteristic luminescence in solid state, and the luminescence was superior than Dy{sup 3+}. The core-shell structure of SiO{sub 2}@Dy(MABA-Si)L nanometermeter luminescent composite was characterized by SEM, TEM and IR spectra. Based on the SEM photographs, the core-shell structure particles showed its regular microstructure including smooth surface, and good dispersity. The ternary complex coated on the mono-dispersed SiO{sub 2} spheres by self-assembly. The fluorescent spectra illustrated that the core-shell structure of SiO{sub 2}@Dy(MABA-Si)L nanometermeter luminescent composites exhibited stronger fluorescent than the ternary complexes. The fluorescence lifetime of the complexes and core-shell structure composites was measured as well.

  11. Sintering behaviour and phase relationships of Si[sub 3]N[sub 4] ceramics in the Si[sub 3]N[sub 4]-SiO[sub 2]-MgO-Y[sub 2]O[sub 3] system. Sinterverhalten und Phasenbeziehungen von Si[sub 3]N[sub 4]-Keramiken im System Si[sub 3]N[sub 4]-SiO[sub 2]-MgO-Y[sub 2]O[sub 3

    Energy Technology Data Exchange (ETDEWEB)

    Mahoney, F.M.

    1992-10-12

    The aim of this work is the investigation of the sintering or crystallisation behaviour of Si[sub 3]N[sub 4] ceramics depending on the additive composition in the Si[sub 3]N[sub 4]-SiO[sub 2]-MgO-Y[sub 2]O[sub 3] system. With regard to the complicated manufacturing process of sintered and heat-treated Si[sub 3]N[sub 4] ceramics, one should first determine which additive compositions make complete compression possible. The effect of the composition on the volume and the viscosity of the melting phase should be cleared up, where determining the Si[sub 3]N[sub 4] solubility relative to the additive composition is of special importance. The phase relationships between Si[sub 3]N[sub 4] and the possible crystalline secondary phases should be determined for the crystallisation behaviour. Due to the very fine distribution of only a 5-15% proportion of additive in conventional Si[sub 3]N[sub 4] samples, a characterisation of the secondary phases is difficult to carry out with X-ray or REM/EDX analysis. Therefore, experiments with oxy-nitridic model samples were carried out in this work, which have the same phase relationships as conventional Si[sub 3]N[sub 4] compositions, but with an appreciably higher proportion of additive. The possibility of transferring the results of the model samples were tested on examples of three Si[sub 3]N[sub 4] ceramics. (orig.)

  12. TiO2, SiO2 and ZrO2 Nanoparticles Synergistically Provoke Cellular Oxidative Damage in Freshwater Microalgae

    Directory of Open Access Journals (Sweden)

    Yinghan Liu

    2018-02-01

    Full Text Available Metal-based nanoparticles (NPs are the most widely used engineered nanomaterials. The individual toxicities of metal-based NPs have been plentifully studied. However, the mixture toxicity of multiple NP systems (n ≥ 3 remains much less understood. Herein, the toxicity of titanium dioxide (TiO2 nanoparticles (NPs, silicon dioxide (SiO2 NPs and zirconium dioxide (ZrO2 NPs to unicellular freshwater algae Scenedesmus obliquus was investigated individually and in binary and ternary combination. Results show that the ternary combination systems of TiO2, SiO2 and ZrO2 NPs at a mixture concentration of 1 mg/L significantly enhanced mitochondrial membrane potential and intracellular reactive oxygen species level in the algae. Moreover, the ternary NP systems remarkably increased the activity of the antioxidant defense enzymes superoxide dismutase and catalase, together with an increase in lipid peroxidation products and small molecule metabolites. Furthermore, the observation of superficial structures of S. obliquus revealed obvious oxidative damage induced by the ternary mixtures. Taken together, the ternary NP systems exerted more severe oxidative stress in the algae than the individual and the binary NP systems. Thus, our findings highlight the importance of the assessment of the synergistic toxicity of multi-nanomaterial systems.

  13. Self Passivating W-based Alloys as Plasma Facing Material

    International Nuclear Information System (INIS)

    Koch, F.; Koeppl, S.; Bolt, H.

    2007-01-01

    Full text of publication follows: Tungsten (W) is presently the main candidate material for the plasma-facing protection of future fusion power reactors due to the low sputter erosion under bombardment by energetic D, T and He ions. Thus a W-based protection material may provide a wall erosion lifetime of the order of five years which is a pre-requisite for economic fusion reactor operation. A potential problem with the use of pure W in a fusion reactor is the formation of radioactive and highly volatile WO 3 compounds and their potential release under accidental conditions. A loss-of-coolant event in a He-cooled reactor would lead to a temperature rise to 1100 deg. C after approx. 10 to 30 days due to the nuclear decay heat of the in-vessel components. In such a situation additional accidental intense air ingress into the reactor vessel would lead to the formation of WO 3 and subsequent evaporation of radioactive (WO 3 ) x -clusters. The use of self passivating W alloys either as bulk material or as thick coating on the steel wall may be a passively safe alternative for the plasma-facing protection. The use of this material would eliminate the above mentioned concern related to pure W. To enable the formation of a protective film in oxidizing atmosphere which seals the tungsten surface from further oxidation, different elements have been investigated as corrosion protection additives. Therefore binary and ternary tungsten alloys were synthesised using magnetron sputtering. The oxidation behaviour of films deposited on inert substrates was measured with a thermo-balance set up under synthetic air at temperatures up to 1000 deg. C. Binary alloys of W-Si showed good self passivation properties by forming a SiO 2 film at the surface. The oxidation rate of a compound containing 11 wt.% Si was reduced by a factor of 10 2 compared to pure tungsten between 800 deg. C and 1000 deg. C. Using ternary alloys the oxidation behaviour could be further improved. A compound of W-Si

  14. Yb-doped aluminophosphosilicate ternary fiber with high efficiency and excellent laser stability

    Science.gov (United States)

    Li, Yuwei; Peng, Kun; Zhan, Huan; Liu, Shuang; Ni, Li; Wang, Yuying; Yu, Juan; Wang, Xiaolong; Wang, Jianjun; Jing, Feng; Lin, Aoxiang

    2018-03-01

    By using chelate precursor doping technique and traditional modified chemical vapor deposition system, we fabricated Yb-doped aluminophosphosilicate (Al2O3-P2O5-SiO2, ternary Yb-APS) large-mode-area fiber and reported on its laser performance. The fiber preform was doped with Al, P and Yb with concentration of ∼8000 ppm, ∼1700 ppm and ∼400 ppm in molar percent, respectively. Tested with master oscillator power amplifier system, the home-made Yb-APS fiber was found to present 1.02 kW at 1061.1 nm with a high slope efficiency of 81.2% and excellent laser stability with power fluctuation less than ±1.1% for over 10 h. Compared with Yb-doped aluminosilicate (Al2O3-SiO2, binary Yb-AS) fiber, the introduction of P2O5 effectively suppressed photodarkening effect even the P/Al ratio is much less than 1, indicating that Yb-APS fiber is a better candidate for high power fiber lasers.

  15. Crystal Growth and Characterization of MT2Si2 Ternary Intermetallics (M = U, RE and T = 3d, 4d, 5d Transition Metals)

    NARCIS (Netherlands)

    Menovsky, A.A.; Moleman, A.C.; Snel, G.E.; Gortenmulder, T.J.; Palstra, T.T.M.

    1986-01-01

    Bulk single crystals of the ternary intermetallic compounds UT2Si2 (T = Ni, Pd, Pt and Ru), LaT2Si2 (T = Pd and Rh) and LuPd2Si2 have been grown from the melt with a modified “tri-arc” Czochralski method. The as-grown crystals were characterized by X-ray, microprobe and chemical analyses. The

  16. Pillarization of layer double hydroxides (Mg/Al with keggin type K4[α-SiW12O40]•nH2O and its application as adsorbent of procion red dye

    Directory of Open Access Journals (Sweden)

    Intan Permata Sari

    2017-07-01

    Full Text Available Pillarization of layered double hydroxides with polyoxometalate K4[α-SiW12O40]•nH2O at various times i.e. 3, 6, 9, 12, 24, 36 and 48 hours has been done. The pillared product was characterized by FT-IR spectrophotometer and XRD. The optimum pillared layered double hydroxides of polyoxometalate K4[α-SiW12O40]•nH2O was used as an adsorbent of procion red dye. The results of characterization using FT-IR spectrophotometer is not yet show the optimum pillarization process. The characterisation using XRD the successfully of pillared layered double hydroxides of polyoxometalate K4[α-SiW12O40]•nH2O showing the existence of diffraction angle 8.5o with intensity 355. Furthermore, the pillared layered double hydroxides of polyoxometalate K4[α-SiW12O40]•nH2O with time variation of 12 hours was applied as an adsorbent of procion red dye. The results show the adsorption rate was 0.523 min-1, the highest of absorption capacity at 70oC was 10.8 mol/g, the highest energy of absorption 70 oC was 125 kJ/mol. The enthalpy (∆H and entropy (∆S, decrease as the increasing concentration of procion red dye. Keywords: layered double hydroxides, polyoxometalate, pillaration, procion red, adsorption

  17. A Josephson ternary associative memory cell

    International Nuclear Information System (INIS)

    Morisue, M.; Suzuki, K.

    1989-01-01

    This paper describes a three-valued content addressable memory cell using a Josephson complementary ternary logic circuit named as JCTL. The memory cell proposed here can perform three operations of searching, writing and reading in ternary logic system. The principle of the memory circuit is illustrated in detail by using the threshold-characteristics of the JCTL. In order to investigate how a high performance operation can be achieved, computer simulations have been made. Simulation results show that the cycle time of memory operation is 120psec, power consumption is about 0.5 μW/cell and tolerances of writing and reading operation are +-15% and +-24%, respectively

  18. Ternary hybrid polymeric nanocomposites through grafting of polystyrene on graphene oxide-TiO_2 by surface initiated atom transfer radical polymerization (SI-ATRP)

    International Nuclear Information System (INIS)

    Kumar, Arvind; Bansal, Ankushi; Behera, Babita; Jain, Suman L.; Ray, Siddharth S.

    2016-01-01

    A ternary hybrid of graphene oxide-titania-polystyrene (GO-TiO_2-PS) nanocomposite is developed where polystyrene composition is regulated by controlling growth of polymer chains and nanoarchitectonics is discussed. Graphene Oxide-TiO_2 (GO-TiO_2) nanocomposite is prepared by in-situ hydrothermal method and the surface is anchored with α-bromoisobutyryl bromide to activate GO-TiO_2 as initiator for polymerization. In-situ grafting of polystyrene through surface initiated atom transfer radical polymerization (SI- ATRP) on this Br-functionalized nano-composite initiator yields GO-TiO_2-PS ternary hybrid. Varying the monomer amount and keeping the concentration of initiator constant, polystyrene chain growth is regulated with narrow poly-dispersivity to achieve desired composition. This composite is well characterized by various analytical techniques like FTIR, XRD, DSC, SEM, TEM, and TGA. - Highlights: • Nanocomposite of ternary hybrid of GO-TiO_2 with polystyrene. • PS is surface grafted on GO-TiO_2. • Polymer chain lengths are well regulated by SI-ATRP living polymerization. • Thermal stability of this hybrid is relatively high.

  19. Effect of adding Si on shape memory effect in Co-Ni alloy system

    Energy Technology Data Exchange (ETDEWEB)

    Zhou Weimin [School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200030 (China); Liu Yan [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Jiang Bohong [School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200030 (China)]. E-mail: bhjiang@sjtu.edu.cn; Zhou Pingnan [School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200030 (China)

    2006-11-25

    In this paper, the effect of adding Si to Co-31.5 mass% Ni alloys on fcc-hcp martensitic transformation is investigated. The Co-Ni-Si ternary alloys with different amount of Si from 1 to 5 mass% were prepared. The stacking fault probability of Co-Ni-Si polycrystalline alloys were determined by X-ray diffraction profile analysis and compared with the binary Co-Ni alloy. The results show that the stacking fault probability of the fcc phase of alloys increases with increasing Si content. The effect of Si on phase transformation and shape memory behavior is evaluated. The experimental results show that both the critical strength and the shape memory effect of the ternary alloys will increase by the addition of Si. The improvement mechanism of the shape memory effect by adding Si to binary Co-Ni alloys is discussed.

  20. Equilibrium phase diagram of the Ag-Au-Pb ternary system

    International Nuclear Information System (INIS)

    Hassam, S.; Bahari, Z.

    2005-01-01

    The phase diagram of the ternary system Ag-Au-Pb has been established using differential thermal analysis and X-ray powder diffraction analysis. Four vertical sections were studied: X Pb = 0.40, X Au /X Pb = 1/3, X Ag /X Au = 4/1 and X Ag /X Au = 1/1. Two ternary transitory peritectics and one ternary eutectic were characterized. A schematic representation of the ternary equilibria is given

  1. Effects of alloying on Co--Si eutectoid structures and properties

    International Nuclear Information System (INIS)

    Livingston, J.D.

    1976-01-01

    The effects of various ternary alloying elements on the microstructure and properties of directionally solidified and transformed Co-Si eutectoid alloys were studied. Aligned eutectoid structures were maintained with additions of up to 10 at. percent Ni. However, higher Ni additions led to changes in both the silicide and solid-solution phases, related changes in microstructure, and decreased tensile strength. Additions of 5 at. percent Cr, Cu, Fe, or Mn produced cellular eutectoid microstructures which deteriorated the mechanical properties. Additions of W, Ta, or Al led to eutectic, rather than eutectoid, microstructures. Alloys based on the Co-W-Si eutectic appear to have the most promising high-temperature mechanical properties

  2. Light coupling and distribution for Si3N4/SiO2 integrated multichannel single-mode sensing system

    Science.gov (United States)

    Kaźmierczak, Andrzej; Dortu, Fabian; Schrevens, Olivier; Giannone, Domenico; Bouville, David; Cassan, Eric; Gylfason, Kristinn B.; Sohlström, Hans; Sanchez, Benito; Griol, Amadeu; Hill, Daniel

    2009-01-01

    We present an efficient and highly alignment-tolerant light coupling and distribution system for a multichannel Si3N4/SiO2 single-mode photonics sensing chip. The design of the input and output couplers and the distribution splitters is discussed. Examples of multichannel data obtained with the system are given.

  3. Alternative solution model for the ternary carbonate system CaCO3 - MgCO3 - FeCO3 - II. Calibration of a combined ordering model and mixing model

    Science.gov (United States)

    McSwiggen, P.L.

    1993-01-01

    Earlier attempts at solution models for the ternary carbonate system have been unable to adequately accommodate the cation ordering which occurs in some of the carbonate phases. The carbonate solution model of this study combines a Margules type of interaction model with a Bragg-Williams type of ordering model. The ordering model determines the equilibrium state of order for a crystal, from which the cation distribution within the lattice can be obtained. The interaction model addresses the effect that mixing different cation species within a given cation layer has on the total free energy of the system. An ordering model was derived, based on the Bragg-Williams approach; it is applicable to ternary systems involving three cations substituting on two sites, and contains three ordering energy parameters (WCaMg, WCaFe, and WCaMgFe). The solution model of this study involves six Margules-type interaction parameters (W12, W21, W13, W31, W23, and W32). Values for the two sets of energy parameters were calculated from experimental data and from compositional relationships in natural assemblages. ?? 1993 Springer-Verlag.

  4. Self-Powered UV-Near Infrared Photodetector Based on Reduced Graphene Oxide/n-Si Vertical Heterojunction.

    Science.gov (United States)

    Li, Guanghui; Liu, Lin; Wu, Guan; Chen, Wei; Qin, Sujie; Wang, Yi; Zhang, Ting

    2016-09-01

    A novel self-powered photodetector based on reduced graphene oxide (rGO)/n-Si p-n vertical heterojunction with high sensitivity and fast response time is presented. The photodetector contains a p-n vertical heterojunction between a drop-casted rGO thin film and n-Si. Contacts between the semiconductor layer (rGO, n-Si) and source-drain Ti/Au electrodes allow efficient transfer of photogenerated charge carriers. The self-powered UV-near infrared photodetector shows high sensitivity toward a spectrum of light from 365 to 1200 nm. Under the 600 nm illumination (0.81 mW cm -2 ), the device has a photoresponsivity of 1.52 A W -1 , with fast response and recover time (2 ms and 3.7 ms), and the ON/OFF ratios exceed 10 4 when the power density reaches ≈2.5 mW cm -2 . The high photoresponse primarily arises from the built-in electric field formed at the interface of n-Si and rGO film. The effect of rGO thickness, rGO reduction level, and layout of rGO/n-Si effective contact area on device performance are also systematically investigated. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Bis(tri-n-hexylsilyl oxide) silicon phthalocyanine: a unique additive in ternary bulk heterojunction organic photovoltaic devices.

    Science.gov (United States)

    Lessard, Benoît H; Dang, Jeremy D; Grant, Trevor M; Gao, Dong; Seferos, Dwight S; Bender, Timothy P

    2014-09-10

    Previous studies have shown that the use of bis(tri-n-hexylsilyl oxide) silicon phthalocyanine ((3HS)2-SiPc) as an additive in a P3HT:PC61BM cascade ternary bulk heterojunction organic photovoltaic (BHJ OPV) device results in an increase in the short circuit current (J(SC)) and efficiency (η(eff)) of up to 25% and 20%, respectively. The previous studies have attributed the increase in performance to the presence of (3HS)2-SiPc at the BHJ interface. In this study, we explored the molecular characteristics of (3HS)2-SiPc which makes it so effective in increasing the OPV device J(SC) and η(eff. Initially, we synthesized phthalocyanine-based additives using different core elements such as germanium and boron instead of silicon, each having similar frontier orbital energies compared to (3HS)2-SiPc and tested their effect on BHJ OPV device performance. We observed that addition of bis(tri-n-hexylsilyl oxide) germanium phthalocyanine ((3HS)2-GePc) or tri-n-hexylsilyl oxide boron subphthalocyanine (3HS-BsubPc) resulted in a nonstatistically significant increase in JSC and η(eff). Secondly, we kept the silicon phthalocyanine core and substituted the tri-n-hexylsilyl solubilizing groups with pentadecyl phenoxy groups and tested the resulting dye in a BHJ OPV. While an increase in JSC and η(eff) was observed at low (PDP)2-SiPc loadings, the increase was not as significant as (3HS)2-SiPc; therefore, (3HS)2-SiPc is a unique additive. During our study, we observed that (3HS)2-SiPc had an extraordinary tendency to crystallize compared to the other compounds in this study and our general experience. On the basis of this observation, we have offered a hypothesis that when (3HS)2-SiPc migrates to the P3HT:PC61BM interface the reason for its unique performance is not solely due to its frontier orbital energies but also might be due to a high driving force for crystallization.

  6. Experimental investigation of the Ag–Bi–I ternary system and thermodynamic properties of the ternary phases

    International Nuclear Information System (INIS)

    Mashadieva, Leyla F.; Aliev, Ziya S.; Shevelkov, Andrei V.; Babanly, Mahammad B.

    2013-01-01

    Highlights: ► The self-consistent phase diagram of the Ag–Bi–I system is constructed. ► Ag 2 BiI 5 and AgBi 2 I 7 are the only ternary phases of the system. ► Standard thermodynamic functions of formation and the standard entropies of Ag 2 BiI 5 and AgBi 2 I 7 are calculated. - Abstract: The phase equilibriums in the Ag–Bi–I ternary system and thermodynamic properties of the ternary phases were experimentally determined by using DTA and XRD techniques and EMF measurements with the Ag 4 RbI 5 solid electrolyte. According to the obtained experimental results, the polythermal sections of the ternary phase diagram, its isothermal section at 300 K as well as the projection of the liquids surface have been revised. The fields of the primary crystallization and types and coordinates of nonvariant and monovariant equilibriums were determined. The partial molar functions of silver iodide and silver in the alloys as well as the standard thermodynamic functions of formation and the standard entropies of Ag 2 BiI 5 and AgBi 2 I 7 were calculated based on EMF measurements.

  7. Maxwell-Stefan diffusion coefficient estimation for ternary systems: an ideal ternary alcohol system.

    Science.gov (United States)

    Allie-Ebrahim, Tariq; Zhu, Qingyu; Bräuer, Pierre; Moggridge, Geoff D; D'Agostino, Carmine

    2017-06-21

    The Maxwell-Stefan model is a popular diffusion model originally developed to model diffusion of gases, which can be considered thermodynamically ideal mixtures, although its application has been extended to model diffusion in non-ideal liquid mixtures as well. A drawback of the model is that it requires the Maxwell-Stefan diffusion coefficients, which are not based on measurable quantities but they have to be estimated. As a result, numerous estimation methods, such as the Darken model, have been proposed to estimate these diffusion coefficients. However, the Darken model was derived, and is only well defined, for binary systems. This model has been extended to ternary systems according to two proposed forms, one by R. Krishna and J. M. van Baten, Ind. Eng. Chem. Res., 2005, 44, 6939-6947 and the other by X. Liu, T. J. H. Vlugt and A. Bardow, Ind. Eng. Chem. Res., 2011, 50, 10350-10358. In this paper, the two forms have been analysed against the ideal ternary system of methanol/butan-1-ol/propan-1-ol and using experimental values of self-diffusion coefficients. In particular, using pulsed gradient stimulated echo nuclear magnetic resonance (PGSTE-NMR) we have measured the self-diffusion coefficients in various methanol/butan-1-ol/propan-1-ol mixtures. The experimental values of self-diffusion coefficients were then used as the input data required for the Darken model. The predictions of the two proposed multicomponent forms of this model were then compared to experimental values of mutual diffusion coefficients for the ideal alcohol ternary system. This experimental-based approach showed that the Liu's model gives better predictions compared to that of Krishna and van Baten, although it was only accurate to within 26%. Nonetheless, the multicomponent Darken model in conjunction with self-diffusion measurements from PGSTE-NMR represents an attractive method for a rapid estimation of mutual diffusion in multicomponent systems, especially when compared to exhaustive

  8. High-field superconductivity in the Nb-Ti-Zr ternary system

    International Nuclear Information System (INIS)

    Ralls, K.M.; Rose, R.M.; Wulff, J.

    1980-01-01

    Resistive critical current densities, critical fields, and normal-state electrical resistivities were obtained at 4.2 0 K for 55 alloys in the Nb-Ti-Zr ternary alloy system, excepting Ti-Zr binary compositions. The resistive critical field as a function of ternary composition has a saddle point between the Nb-Ti and Nb-Zr binaries, so that ternary alloying in this system is not expected to result in higher critical fields than the binary alloys

  9. High-field superconductivity in the Nb-Ti-Zr ternary system

    Science.gov (United States)

    Ralls, K. M.; Rose, R. M.; Wulff, J.

    1980-06-01

    Resistive critical current densities, critical fields, and normal-state electrical resistivities were obtained at 4.2 °K for 55 alloys in the Nb-Ti-Zr ternary alloy system, excepting Ti-Zr binary compositions. The resistive critical field as a function of ternary composition has a saddle point between the Nb-Ti and Nb-Zr binaries, so that ternary alloying in this system is not expected to result in higher critical fields than the binary alloys.

  10. Analysis of phase formation in Ni-rich alloys of the Ni-Ta-W system by calorimetry, DTA, SEM, and TEM

    Energy Technology Data Exchange (ETDEWEB)

    Witusiewicz, V.T.; Hecht, U.; Warnken, N.; Fries, S.G. [Access e.V., Aachen (Germany); Hu Weiping [Inst. fuer Metallkunde und Metallphysik der RWTH Aachen (Germany)

    2006-04-15

    The partial enthalpies of dissolution of pure Ni, W and Ta in liquid ternary Ni-Ta-W alloys have been determined at (1773 {+-} 5) K using a high temperature isoperibolic calorimeter. Measurements were performed in Ni-rich alloys (from 80 to 100 at.% Ni) along sections with constant Ta:W atomic ratios 1:0, 2:1, 1:2, and 0:1. The partial enthalpies and thereby the integral enthalpy of mixing of these ternary alloys are calculated from the partial enthalpies of dissolution using SGTE Gibbs energies for pure elements as reference. The obtained thermochemical data confirm that in the investigated Ni-rich alloys the binary interactions between Ta and W as well as the ternary Ni-Ta-W interactions are negligibly small. Due to this the variation of the integral enthalpy of mixing of the ternary alloys is well described as linear combination of the constituent Ni-Ta and Ni-W binaries. Such behaviour of the ternary liquid alloys is related to a very low probability of new ternary stable phases to occur in solid state. This prediction is confirmed by differential thermal analysis, scanning electron microscopy, and transmission electron microscopy of the as-solidified and annealed samples obtained as last alloy compositions in the series of calorimetric dissolution. (orig.)

  11. Ytterbium doped silicon clusters YbSi{sub n} (n = 4–10) and their anions: Structures, thermochemistry, and electron affinities

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Xiaohong [School of Chemical Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China); Hao, Dongsheng [School of Chemical Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China); School of Mining and Technology, Inner Mongolia University of Technology, Hohhot 010051 (China); Yang, Jucai, E-mail: yangjc@imut.edu.cn [School of Chemical Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China); School of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China)

    2015-11-05

    Highlights: • The ground-state structure of YbSi{sub n} and its anion is substitutional structure. • The four DFT AEAs are in excellent agreement with the experimental data. • Theoretical AEA of 2.33 eV of YbSi{sub 9} is more reasonable than the experimental 2.60 eV. • Hardness analysis reveals that doping Yb to Si{sub n} raises photochemical sensitivity. • Relative stabilities of YbSi{sub n} and their anions are examined. - Abstract: The structures, electron affinities, dissociation energies, hardness, and dipole moments of YbSi{sub n} (n = 4–10) and their anions were examined using B3LYP, TPSSh, PBE and wB97X methods. The lowest-energy structures can be regarded as replacing a Si of the ground-state structure of Si{sub n+1} with a Yb atom. The theoretical adiabatic electron affinities (AEAs) of YbSi{sub n} are in excellent agreement with experimental data. The average absolute errors from experiment are by 0.08, 0.07, 0.05 and 0.08 eV at the B3LYP, the TPSSh, the PBE and the wB97X levels, respectively. Theoretical AEAs of 2.33 ± 0.05 eV for YbSi{sub 9} are more reliable than the experimental value of 2.60 ± 0.05 eV. The hardness analysis reveals that doping Yb atom to Si{sub n} (n = 4–10) clusters raises the photochemical sensitivity. The dissociation energies of Yb atom from YbSi{sub n} and their anions were calculated to examine relative stabilities.

  12. Acceleration of Fe2W precipitation and its effect on creep deformation behavior of 8.5Cr-2W-VNb steels with Si

    International Nuclear Information System (INIS)

    Fujitsuna, N.; Igarashi, M.; Abe, F.

    2000-01-01

    The effect of Si on the precipitation behavior of M 23 C 6 and Fe 2 W Laves phase during creep and on the creep deformation behavior was studied on 8.5Cr-2W-VNb steels at 650 C for up to 10000 h. During creep and aging, Fe 2 W Laves phase precipitated and then the amount and the mean particle size of Fe 2 W precipitates became larger with increasing Si concentration, while the amount and the mean size of M 23 C 6 was scarcely changed by the addition of Si. It was cleared that Si-addition influence more strongly on the precipitation of Fe 2 W than M 23 C 6 . The creep rupture strength of the steels increased with increasing Si concentration at high stresses and short rupture times less than 2000 h, while it had a maximum at 0.3% Si and then decreased with increasing Si concentration at low stresses and long rupture times longer than 2000 h. The decrease of creep rate in the acceleration creep region was more significant by Si-addition, and the minimum creep rate was decreased by Si-addition at all stress conditions. The change in creep deformation behavior by Si-addition resulted mainly from the change in precipitation behavior of Fe 2 W, such that the decrease of creep rate in transient creep region is more significant by acceleration of Fe 2 W precipitating on the lath boundary to suppress the recovery of the lath structure and that the extreme increase of creep rate after reaching a minimum creep rate and the decrease of duration of acceleration creep region occurred with coarsening of Fe 2 W. (orig.)

  13. High-Efficient Circuits for Ternary Addition

    Directory of Open Access Journals (Sweden)

    Reza Faghih Mirzaee

    2014-01-01

    Full Text Available New ternary adders, which are fundamental components of ternary addition, are presented in this paper. They are on the basis of a logic style which mostly generates binary signals. Therefore, static power dissipation reaches its minimum extent. Extensive different analyses are carried out to examine how efficient the new designs are. For instance, the ternary ripple adder constructed by the proposed ternary half and full adders consumes 2.33 μW less power than the one implemented by the previous adder cells. It is almost twice faster as well. Due to their unique superior characteristics for ternary circuitry, carbon nanotube field-effect transistors are used to form the novel circuits, which are entirely suitable for practical applications.

  14. Thermal stability and electrical characteristics of NiSi films with electroplated Ni(W) alloy

    International Nuclear Information System (INIS)

    Xin Yuhang; Hu Anmin; Li Ming; Mao Dali

    2011-01-01

    In this study, an electroplating method to deposited Ni, crystalline NiW(c-NiW), amorphous NiW (a-NiW) films on P-type Si(1 0 0) were used to form Ni-silicide (NiSi) films. After annealed at various temperatures, sheet resistance of Ni/Cu, c-NiW/Cu and a-NiW/Cu was measured to observe the performance of those diffusion barrier layers. With W added in the barrier layer, the barrier performance was improved. The results of XRD and resistance measurement of the stacked Si/Ni(W)/Cu films reveal that Cu atom could diffuse through Ni barrier layer at 450 deg. C, could diffuse through c-NiW at 550 deg. C, but could hardly diffuse through a-NiW barrier layer. c-NiW layer has a better barrier performance than Ni layer, meanwhile the resistance is lower than a-NiW layer.

  15. Solid-state reactions during mechanical alloying of ternary Fe-Al-X (X=Ni, Mn, Cu, Ti, Cr, B, Si) systems: A review

    Science.gov (United States)

    Hadef, Fatma

    2016-12-01

    The last decade has witnessed an intensive research in the field of nanocrystalline materials due to their enhanced properties. A lot of processing techniques were developed in order to synthesis these novel materials, among them mechanical alloying or high-energy ball milling. In fact, mechanical alloying is one of the most common operations in the processing of solids. It can be used to quickly and easily synthesize a variety of technologically useful materials which are very difficult to manufacture by other techniques. One advantage of MA over many other techniques is that is a solid state technique and consequently problems associated with melting and solidification are bypassed. Special attention is being paid to the synthesis of alloys through reactions mainly occurring in solid state in many metallic ternary Fe-Al-X systems, in order to improve mainly Fe-Al structural and mechanical properties. The results show that nanocrystallization is the common result occurring in all systems during MA process. The aim of this work is to illustrate the uniqueness of MA process to induce phase transformation in metallic Fe-Al-X (X=Ni, Mn, Cu, Ti, Cr, B, Si) systems.

  16. GaN transistors on Si for switching and high-frequency applications

    Science.gov (United States)

    Ueda, Tetsuzo; Ishida, Masahiro; Tanaka, Tsuyoshi; Ueda, Daisuke

    2014-10-01

    In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

  17. Characterization of electrical resistivity as a function of temperature in the Mo-Si-B system

    International Nuclear Information System (INIS)

    Beckman, Sarah E.

    1999-01-01

    Measurements of electrical resistivity as a function of temperature from 25 to 1,500 C were conducted on polycrystalline samples in the Mo-Si-B system. Single phase, or nearly single phase, samples were prepared for the following phases: Mo 3 Si, Mo 5 SiB 2 , Mo 5 Si 3 B x , MoB, MoSi 2 , and Mo 5 Si 3 . Thesis materials all exhibit resistivity values within a narrow range(4--22 x 10 -7 Omega-m), and the low magnitude suggests these materials are semi-metals or low density of states metals. With the exception of MoSi 2 , all single phase materials in this study were also found to have low temperature coefficient of resistivity(TCR) values. These values ranged from 2.10 x 10 -10 to 4.74 x 10 -10 Omega-m/degree C, and MoSi 2 had a TCR of 13.77 x 10 -10 Omega-m/degree C. The results from the single phase sample measurements were employed in a natural log rule-of-mixtures model to relate the individual phase resistivity values to those of multiphase composites. Three Mo-Si-B phase regions were analyzed: the binary Mo 5 Si 3 -MoSi 2 system, the ternary phase field Mo 5 Si 3 B x MoB-MoSi 2 , and the Mo 3 Si-Mo 5 SiB 2 -Mo 5 Si 3 B x ternary region. The experimental data for samples in each of these regions agreed with the natural log model and illustrated that this model can predict the electrical resistivity as a function of temperature of multi-phase, sintered samples within an error of one standard deviation

  18. EM study of crystallography and phase relationships in the Be/sub 3/N/sub 2/--BeSiN/sub 2/ system

    Energy Technology Data Exchange (ETDEWEB)

    Shaw, T.M.

    1977-12-01

    Transmission electron microscopy and diffraction have been used to examine structural aspects of phases along the BeSiN/sub 2/-Be/sub 3/N/sub 2/ tie line of the Be-Si-O-N system. Electron diffraction experiments are found to substantiate previous x-ray evidence for the derived structures of BeSiN/sub 2/, ..beta.. Be/sub 3/N/sub 2/, ..cap alpha.. Be/sub 3/N/sub 2/ and the presence of a number of long period superstructures at intermediate compositions. Real space observations using direct fringe and structure imaging techniques have been made and are in agreement with the 15R polytype structure derived from x-ray diffraction data. In addition, these observations indicate that beryllium atoms are preferentially sited in cubic stacked layers, allowing the polytype structures to be described as a coherent intergrowth of layers of the BeSiN/sub 2/ and ..beta.. Be/sub 3/N/sub 2/ structure. Further observations made on a non stoichiometric BeSiN/sub 2/ sample suggests that alternatively the polytypes may be described in terms of a regularly faulted BeSiN/sub 2/ structure. Each fault changes the coordination of tetrahedral sites from base sharing to edge sharing in the fault, allowing excess beryllium atoms to be accommodated in the close packed nitrogen lattice. For larger deviations from the BeSiN/sub 2/ stoichiometric composition a higher density of faults occur which interact to form ordered arrangements and the observed polytype structures. The present observations establish that polytypism in the Be-Si-N system is related to the general phenomenon of crystallographic shear as observed in other complex oxide and ceramic systems. It is suggested that similar faulting may account for the polytype structures in other Sialon systems.

  19. Processes and procedures for a thin film multilevel hybrid circuit metallization system based on W--Au/SiO2/Al/SiO2

    International Nuclear Information System (INIS)

    Hampy, R.E.; Knauss, G.L.; Komarek, E.E.; Kramer, D.K.; Villanueva, J.

    1976-04-01

    The processes and procedures developed for the deposition and photodefinition of a W-Au/SiO 2 /Al/SiO 2 hybrid circuit metallization system for the SLL Micro Actuator are described. The metallization system affords a high degree of miniaturization and permits effective interconnection of a mixture of semiconductor devices and passive components with both gold and aluminum terminations without creating undesirable gold-aluminum interfaces. Sputtered tungsten-gold is the first level conductor except at crossovers where tungsten only is used and aluminum is the second level conductor. Silicon dioxide serves as an insulator between the tungsten and aluminum for crossovers. Vias in the insulating layer permit tungsten-aluminum interconnections where desired. A second layer of silicon dioxide is deposited over the metallization and opened for all gold and aluminum bonding pads. Substrates used were polished sapphire and fine grained alumina. The metallization is capable of withstanding processing temperatures up to 400 0 C for short times

  20. Induced electrostatic confinement of electron gas in W-designed strain-compensated Si/Si1-x Ge x /Si type-II quantum wells

    International Nuclear Information System (INIS)

    Sfina, N.; Lazzari, J.-L.; Christol, P.; Cuminal, Y.; Said, M.

    2006-01-01

    We present a numerical modeling of the conduction- and the valence-band diagrams of W designed Si/Si 0.4 Ge 0.6 /Si type II quantum wells. These W structures, strain-compensated on relaxed Si 0.75 Ge 0.25 pseudo-substrates, are potentially interesting for emission and photo-detection around a 1.55μm wavelength. Two main features have been extrapolated by solving self-consistently Schroedinger and Poisson equations, taking into account the electrostatic attraction induced by carrier injection: (i) Coulomb attraction strongly modifies the band profiles and increases the electron probability density at the quantum well interfaces. (ii) The injected carrier concentration enhances the in-plane oscillator strength and the electron-hole wave-function overlap

  1. Thermal neutron radiative capture cross-section of 186W(n, γ)187W reaction

    International Nuclear Information System (INIS)

    Tan, V H; Son, P N

    2016-01-01

    The thermal neutron radiative capture cross section for 186 W(n, γ) 187 W reaction was measured by the activation method using the filtered neutron beam at the Dalat research reactor. An optimal composition of Si and Bi, in single crystal form, has been used as neutron filters to create the high-purity filtered neutron beam with Cadmium ratio of R cd = 420 and peak energy E n = 0.025 eV. The induced activities in the irradiated samples were measured by a high resolution HPGe digital gamma-ray spectrometer. The present result of cross section has been determined relatively to the reference value of the standard reaction 197 Au(n, γ) 198 Au. The necessary correction factors for gamma-ray true coincidence summing, and thermal neutron self-shielding effects were taken into account in this experiment by Monte Carlo simulations. (paper)

  2. Density-Driven segregation in Binary and Ternary Granular Systems

    NARCIS (Netherlands)

    Windows-Yule, Kit; Parker, David

    2015-01-01

    We present a first experimental study of density-induced segregation within a three-dimensional, vibrofluidised, ternary granular system. Using Positron Emission Particle Tracking (PEPT), we study the steady-state particle distributions achieved by binary and ternary granular beds under a variety of

  3. „Biblioteka ucząca się” – zmiany w organizacji i systemie zarządzania w Bibliotece Uniwersytetu Finlandii Wschodniej

    Directory of Open Access Journals (Sweden)

    Hanna Grabowska

    2012-01-01

    Full Text Available Zmieniające się, dynamiczne i wymagające otoczenie współczesnej biblioteki naukowej wywiera nacisk na procesy innowacyjne związane ze zmianami modelu zarządzania. Tematem artykułu są zmiany w organizacji i systemie zarządzania w Bibliotece Uniwersytetu Finlandii Wschodniej przeprowadzone w związku z fuzją poszczególnych jednostek bibliotecznych. W artykule opisano przeobrażenia na poziomie struktury organizacyjnej, polityki gromadzenia, przechowywania i udostępniania zbiorów oraz w zakresie zarządzania zasobami ludzkimi w kontekście koncepcji organizacji uczącej się, która potrafi funkcjonować w niestabilnym otoczeniu, dostosowuje się do zmian, ale także poszukuje alternatywy zapewniającej ciągłość i rozwój organizacji.

  4. The ternary system nickel-nobium-carbon

    International Nuclear Information System (INIS)

    Stadelmaier, H.H.; Fiedler, M.L.

    1975-01-01

    The ternary system nickel-niobium-carbon was studied by metallographic and X-ray diffraction methods to produce a liquidus projection and an isothermal section at 1,100 0 C. The liquidus projection is dominated by a wide field of primary NbC that extends far into the nickel corner of the composition triangle. Only one ternary compound is observed in this system, an eta-carbide formed in a peritectoid reaction. It has a narrow homogeneity range at Ni 2 Nb 4 C, and its lattice constant in alloys quenched from 1,100 0 C varies between 11.659 and 11.667 A. No eta-carbide Ni 3 Nb 3 C or Ni 6 Nb 6 could be detected. (orig.) [de

  5. Constitution of the ternary system Cr–Ni–Ti

    International Nuclear Information System (INIS)

    Krendelsberger, Natalja; Weitzer, Franz; Du, Yong; Schuster, Julius C.

    2013-01-01

    Highlights: •Reaction scheme and liquidus surface for Cr-Ni-Ti are given. •In the ternary the C14-type Laves phase coexists with the liquid phase. •Two ternary eutectics are identified. -- Abstract: The nature of solid–liquid phase equilibria in the ternary system Cr–Ni–Ti was investigated using electron microscopy, energy dispersive spectroscopy, X-ray diffraction, and differential thermal analysis. Literature data on solid state phase equilibria are confirmed. The Cr 2 Ti Laves phase modifications coexisting with Ni–Ti phases are clarified to be hexagonal C14-type and cubic C15-type. The C14-type Laves phase γCr 2 Ti is found to coexist with the liquid phase. It forms in the pseudobinary peritectic reaction p max1 from L + β(Cr,Ti) at 1389 °C. On further cooling γCr 2 Ti + NiTi solidify at 1202 °C in the pseudobinary eutectic e max2 . In the Cr-rich part of the system ternary eutectics occur at 1216 °C (E 1 : L = Ni 3 Ti + (Ni) + β(Cr,Ti)) and 1100 °C (E 2 : L = NiTi + Ni 3 Ti + β(Cr,Ti)), respectively. No ternary eutectic is found in the Ti-rich part. Rather the eutectic trough ends in the binary eutectic L = NiTi 2 + β(Ti)

  6. LiCa{sub 3}Si{sub 2}N{sub 5} - A Lithium nitridosilicate with a [Si{sub 2}N{sub 5}]{sup 7-} double-chain

    Energy Technology Data Exchange (ETDEWEB)

    Lupart, Saskia; Schnick, Wolfgang [Department Chemie, Lehrstuhl fuer Anorganische Festkoerperchemie, Ludwig-Maximilians-Universitaet Muenchen (Germany)

    2012-10-15

    The lithium nitridosilicate LiCa{sub 3}Si{sub 2}N{sub 5} was synthesized by the reaction of calcium with Si(NH){sub 2} and Li{sub 3}N in weld shut tantalum ampoules at 900 C. The structure of LiCa{sub 3}Si{sub 2}N{sub 5} [space group C2/c, no. 15, a = 5.1454(10), b = 20.380(4), c = 10.357(2) Aa, β = 91.24(3) , wR{sub 2} = 0.1084, 863 data, 102 parameters] consists of [Si{sub 2}N{sub 5}]{sup 7-} double-chains including edge-sharing tetrahedra. The lithium atoms in the crystal structure are situated in strands along the crystallographic b axis. Lattice energy calculations (MAPLE) and EDX measurements confirmed the electrostatic bonding interactions and the chemical composition. The {sup 29}Si and {sup 7}Li solid-state MAS NMR spectroscopic investigations are reported. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

    Energy Technology Data Exchange (ETDEWEB)

    Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bogdan; Paszkiewicz, Regina [The Faculty of Microsystem Electronics and Photonics, Wrocaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Drzik, Milan [International Laser Center, Ilkovicova 3, 841-04 Bratislava 4 (Slovakia)

    2015-07-15

    GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grown with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.

  8. Phase relationships in the quasi-ternary LaO1.5–SiO2–MgO system at 1773 K

    Directory of Open Access Journals (Sweden)

    Kiyoshi Kobayashi and Yoshio Sakka

    2012-01-01

    Full Text Available Phase relationships in the LaO1.5–SiO2–MgO quasi-ternary system at 1773 K were investigated by powder x-ray diffraction (XRD analysis applying single- and multiple-phase Rietveld methods. Most of the formed phases satisfied the Gibbs' phase rule, except for the samples containing LaO1.5 and a liquid phase at 1773 K. The detection of segregated MgO phases was difficult in the XRD profiles of the compositional samples around the oxyapatite single phase because the MgO peaks were weak and heavily overlapped by peaks from the oxyapatite and La(OH3 phases. The solid solubility limit of MgO in oxyapatite was determined not only from the chemical composition of the oxyapatite phase, which was confirmed by XRD, but also from several phase boundary compositions among the two-phase and three-phase regions based on the Gibbs' phase rule. Formation of a liquid phase at 1773 K was observed in a wide range of compositions and considered when constructing the phase diagram.

  9. Analytical determination of distillation boundaries for ternary azeotropic systems

    OpenAIRE

    Marcilla Gomis, Antonio; Reyes Labarta, Juan Antonio; Velasco, Raúl; Serrano Cayuelas, María Dolores; Olaya López, María del Mar

    2009-01-01

    A new straight forward algorithm to calculate distillation boundaries in ternary azeotropic systems has been developed. The proposed method allows, using cubic splines, the calculation of distillation trajectories and the calculation of that corresponding to the searched distillation boundaries. The algorithm is applied to 4 ternary liquid-vapour systems to test its validity. Vicepresidency of Research (University of Alicante) and Generalitat Valenciana (GV/2007/125)

  10. Growth and properties of Al-rich InxAl1-xN ternary alloy grown on GaN template by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Oh, Tae Su; Suh, Eun-Kyung; Kim, Jong Ock; Jeong, Hyun; Lee, Yong Seok; Nagarajan, S; Lim, Kee Young; Hong, Chang-Hee

    2008-01-01

    An Al-rich In x Al 1-x N ternary alloy was grown on a GaN template by metal-organic chemical vapour deposition (MOCVD). The GaN template was fabricated on a c-plane sapphire with a low temperature GaN nucleation layer. The growth of the 300 nm thick In x Al 1-x N layer was carried out under various growth temperatures and pressures. The surface morphology and the InN molar fraction of the In x Al 1-x N layer were assessed by using atomic force microscopy (AFM) and high resolution x-ray diffraction, respectively. The AFM surface images of the In x Al 1-x N ternary alloy exhibited quantum dot-like grains caused by the 3D island growth mode. The grains, however, disappeared rapidly by increasing diffusion length and mobility of the Al adatoms with increasing growth temperature and the full width at half maximum value of ternary peaks in HR-XRD decreased with decreasing growth pressure. The MOCVD growth condition with the increased growth temperature and decreased growth pressure would be effective to grow the In x Al 1-x N ternary alloy with a smooth surface and improved quality. The optical band edge of In x Al 1-x N ternary alloys was estimated by optical absorbance and, based on the results of HR-XRD and optical absorbance measurements, we obtained the bowing parameter of the In x Al 1-x N ternary alloy at b = 5.3 eV, which was slightly larger than that of previous reports

  11. Effect on strength of ternary alloying additions in L12 intermetallics

    International Nuclear Information System (INIS)

    Wu Yuanpang.

    1991-01-01

    The thermodynamic properties of {111} antiphase boundaries (APBs) as well as the site preference of ternary additions in an A 3 B intermetallic with L1 2 structure are studied, using a thermodynamic model. A survey of the results from a variety of ternary alloying additions to Ni 3 Al has shown that there is a conflict in the actual role which solid solution strengthening plays in the athermal increment of yield strength. For instance, a good quantitative agreement with linear concentration law is observed only in alloys with stoichiometric compositions but not in the general case of non-stoichiometric alloys. In the light of the possibility that micro-segregation could explain the experimental discrepancy, the author extends the binary solid solution strengthening theory to the ternary system in an L1 2 structure for the four real systems of Ni-Al-Si, Ni-Al-Ti, Ni-Al-Hf, and Ni-Al-V. It is found that ternary site preference plays an important role in the ternary solid solution strengthening theory with L1 2 structure. Good quantitative agreement was found between the calculated and experimentally measured strength for both stoichiometric and nonstoichiometric alloys

  12. Magnetic transition induced by mechanical deformation in Fe{sub 60}Al{sub 40−x}Si{sub x} ternary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Legarra, E., E-mail: estibaliz.legarra@ehu.es [Dpto. Electricidad y Electronica, Universidad del Pais Vasco (UPV/EHU), CP. 644, 48080 Bilbao (Spain); Apiñaniz, E. [Dpto. Fisica Aplicada I, Universidad del Pais Vasco, Alameda de Urquijo s/n, 48013 Bilbao (Spain); Plazaola, F. [Dpto. Electricidad y Electronica, Universidad del Pais Vasco (UPV/EHU), CP. 644, 48080 Bilbao (Spain); Jimenez, J.A. [Centro Nacional de Investigaciones Metalurgicas (CENIM), Avda. Gregorio del amo 8, 28040 Madrid (Spain)

    2014-02-15

    Highlights: • Fe{sub 60}Al{sub 40−x}Si{sub x} alloys were disordered by means of planetary ball milling technique. • Paramagnetic to ferromagnetic transition is observed with disordering. • Si addition hinders the disordering process and the increase of the lattice parameter. • Si addition promotes the paramagnetic to ferromagnetic transition. -- Abstract: We have used Mössbauer spectroscopy and X-ray diffraction to study the influence of different Al/Si ratios on the structural and magnetic properties of the mechanically deformed Fe{sub 60}Al{sub 40−x}Si{sub x} alloys. The results indicate that ternary alloys also present the magnetic transition with disordering observed in binary Fe{sub 60}Al{sub 40} alloys. Besides, Si introduction has two opposite contributions. From a structural point of view, hinders the disordering process, but, from a magnetic point of view promotes the magnetic transition.

  13. Ternary particle yields in 249Cf(nth,f)

    Science.gov (United States)

    Tsekhanovich, I.; Büyükmumcu, Z.; Davi, M.; Denschlag, H. O.; Gönnenwein, F.; Boulyga, S. F.

    2003-03-01

    An experiment measuring ternary particle yields in 249Cf(nth,f) was carried out at the high flux reactor of the Institut Laue-Langevin using the Lohengrin recoil mass separator. Parameters of energy distributions were determined for 27 ternary particles up to 30Mg and their yields were calculated. The yields of 17 further ternary particles were estimated on the basis of the systematics developed. The heaviest particles observed in the experiment are 37Si and 37S; their possible origin is discussed.

  14. Boosting the Visible-Light Photoactivity of BiOCl/BiVO4/N-GQD Ternary Heterojunctions Based on Internal Z-Scheme Charge Transfer of N-GQDs: Simultaneous Band Gap Narrowing and Carrier Lifetime Prolonging.

    Science.gov (United States)

    Zhu, Mingyue; Liu, Qian; Chen, Wei; Yin, Yuanyuan; Ge, Lan; Li, Henan; Wang, Kun

    2017-11-08

    The efficient separation of photogenerated electron-hole pairs in photoactive materials is highly desired, allowing their transfer to specific sites for undergoing redox reaction in various applications. The construction of ternary heterojunctions is a practical strategy to enhance the migration of photogenerated electron that realizes the synergistic effect of multicomponents rather than the simple overlay of single component. Here, we demonstrate an available way to fabricate new BiOCl/BiVO 4 /nitrogen-doped graphene quantum dot (N-GQD) ternary heterojunctions that exhibit higher efficiency in charge separation than any binary heterojunction or pure material under visible-light irradiation. UV-vis diffuse reflectance spectroscopy demonstrated that the proposed BiOCl/BiVO 4 /N-GQD ternary heterojunctions possess the narrower band gap energy. More importantly, the ternary heterojunctions reveal the prolonged lifetime of photogenerated charges and enhanced the separation efficiency of photogenerated electron-hole pairs, which may be ascribed to sensitization based on an internal Z-scheme charge transfer at the interface of N-GQDs with oxygen functional groups. Furthermore, we examine the photoactive performance of proposed ternary heterojunctions in aqueous solution by using the photodegradation of bisphenol A as a model system and BiOCl/BiVO 4 /N-GQD ternary heterojunctions also display a dramatically enhanced photodegradation rate. The proposed charge separation and transfer process of BiOCl/BiVO 4 /N-GQD ternary heterojunctions for the enhanced photoactivity were deduced by electrochemical measurements, photoluminescence, and electron spin resonance. The results demonstrate that a Z-scheme charge process was formed between BiOCl/BiVO 4 binary heterojunctions and N-GQDs, leading to an efficient charge carrier separation and strong photocatalytic ability. Notably, this work may assist in a better understanding of the role of N-GQDs in kinds of heterojunctions

  15. Lattice dynamics of a- Si3N4

    International Nuclear Information System (INIS)

    Schulz, P.A.B.; Silva, C.E.T.G. da

    1984-01-01

    We introduce a model for the lattice dynamics of SI 3 N 4 in its amorphous phase. This model is based on a Born hamiltonian, solved in the Bethe lattice approximation. We included the local vicinity until third nearest neighbours, building up the central cluster. (M.W.O.) [pt

  16. Self induced gratings in ternary SiO2:SnO2:Na2O bulk glasses by UV light seeding.

    Science.gov (United States)

    Lancry, M; Douay, M; Niay, P; Beclin, F; Menke, Y; Milanese, D; Ferraris, M; Poumellec, B

    2005-09-05

    The diffraction efficiency of gratings written in ternary SnO2:SiO2:Na2O bulk glasses rises dramatically with time after the occultation of the cw 244nm light used to write the thick hologram. This self-induced behavior lasts for several hours and ultimately leads to refractive index changes as high as 3 10-3.

  17. Thermodynamics of the Mo-Fe-C and W-Fe-C systems

    International Nuclear Information System (INIS)

    Kleykamp, H.

    1978-01-01

    A study on the reaction behaviour of the components of the Mo 2 C-Fe and WC-Fe systems is presented. Both systems are stable if the mono-phase carbides are in equilibrium with the Fe-C solid solution within fixed carbon concentrations, the limits of which are calculated in this paper. Gibbs energies of formation at 1273 K of the intermetallic phases, of the binary and of the ternary carbides in the Mo-Fe-C and W-Fe-C systems were determined. The Fe corner in the phase diagrams of both systems and the calculated C boundaries in the two-phase field γ-Fe(Mo,C)-Mo 2 C and the γ-Fe(W,C)-WC, respectively, based on this study, are shown in figures. (GSC) [de

  18. Well-Defined Surface Species [(≡Si - O -)W(=O)Me3] Prepared by Direct Methylation of [(≡Si - O -)W(=O)Cl3], a Catalyst for Cycloalkane Metathesis and Transformation of Ethylene to Propylene

    KAUST Repository

    Hamieh, Ali Imad Ali

    2015-04-03

    The silica-supported tungsten oxo-trimethyl complex [(≡Si - O -)W(=O)Me3] was synthesized using a novel SOMC synthetic approach. By grafting the inexpensive stable compound WOCl4 on the surface of silica, partially dehydroxylated at 700 °C (SiO2-700), a well-defined monopodal surface complex [(≡Si - O -)W(=O)Cl3] was produced. The supported complex directly methylated with ZnMe2 and transformed into [(≡Si - O -)W(=O)Me3], which we fully characterized by microanalysis, IR, mass balance and SS NMR (1H, 13C, 1H-13C HETCOR, 1H-1H DQ and TQ). [(≡Si - O)W(=O)Me3] has two conformational isomers on the surface at room temperature. The conversion of one to the other was observed at 318 K by variable-temperature 13C CP/MAS and 1H spin echo MAS solid-state NMR; this was also confirmed by NMR and DFT calculations. [(≡Si - O)W(=O)Me3] was found to be active in cyclooctane metathesis and to have a wide distribution range in ring-contracted and ring-expanded products. In addition, [(≡Si - O)W(=O)Me3] proved to be highly active for selective transformation of ethylene to propylene compared to other silica-supported organometallic complexes. (Chemical Equation Presented). © 2015 American Chemical Society.

  19. Well-Defined Surface Species [(≡Si - O -)W(=O)Me3] Prepared by Direct Methylation of [(≡Si - O -)W(=O)Cl3], a Catalyst for Cycloalkane Metathesis and Transformation of Ethylene to Propylene

    KAUST Repository

    Hamieh, Ali Imad Ali; Chen, Yin; Abdel-Azeim, Safwat; Abou-Hamad, Edy; Goh, Li Min Serena; Samantaray, Manoja; Dey, Raju; Cavallo, Luigi; Basset, Jean-Marie

    2015-01-01

    The silica-supported tungsten oxo-trimethyl complex [(≡Si - O -)W(=O)Me3] was synthesized using a novel SOMC synthetic approach. By grafting the inexpensive stable compound WOCl4 on the surface of silica, partially dehydroxylated at 700 °C (SiO2-700), a well-defined monopodal surface complex [(≡Si - O -)W(=O)Cl3] was produced. The supported complex directly methylated with ZnMe2 and transformed into [(≡Si - O -)W(=O)Me3], which we fully characterized by microanalysis, IR, mass balance and SS NMR (1H, 13C, 1H-13C HETCOR, 1H-1H DQ and TQ). [(≡Si - O)W(=O)Me3] has two conformational isomers on the surface at room temperature. The conversion of one to the other was observed at 318 K by variable-temperature 13C CP/MAS and 1H spin echo MAS solid-state NMR; this was also confirmed by NMR and DFT calculations. [(≡Si - O)W(=O)Me3] was found to be active in cyclooctane metathesis and to have a wide distribution range in ring-contracted and ring-expanded products. In addition, [(≡Si - O)W(=O)Me3] proved to be highly active for selective transformation of ethylene to propylene compared to other silica-supported organometallic complexes. (Chemical Equation Presented). © 2015 American Chemical Society.

  20. Zr-Fe-Sn Ternary System Phase Diagrams- New Experimental Results

    International Nuclear Information System (INIS)

    Nieva, N; Gomez, A; Arias, D

    2004-01-01

    New experimental results for the Zr-Fe-Sn ternary system are presented in this paper. The phases present and equilibrium relations for the 900 o C isothermal on the central zone of the Gibbs triangle are analysed. A set of ternary alloys was designed and obtained, and they were analysed by semi quantitative SEM- EDS, XRD, and metallographic samples. The resulting ternary phase diagrams are presented here (JCH)

  1. Ternary hybrid polymeric nanocomposites through grafting of polystyrene on graphene oxide-TiO{sub 2} by surface initiated atom transfer radical polymerization (SI-ATRP)

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Arvind; Bansal, Ankushi; Behera, Babita; Jain, Suman L.; Ray, Siddharth S., E-mail: ssray@iip.res.in

    2016-04-01

    A ternary hybrid of graphene oxide-titania-polystyrene (GO-TiO{sub 2}-PS) nanocomposite is developed where polystyrene composition is regulated by controlling growth of polymer chains and nanoarchitectonics is discussed. Graphene Oxide-TiO{sub 2} (GO-TiO{sub 2}) nanocomposite is prepared by in-situ hydrothermal method and the surface is anchored with α-bromoisobutyryl bromide to activate GO-TiO{sub 2} as initiator for polymerization. In-situ grafting of polystyrene through surface initiated atom transfer radical polymerization (SI- ATRP) on this Br-functionalized nano-composite initiator yields GO-TiO{sub 2}-PS ternary hybrid. Varying the monomer amount and keeping the concentration of initiator constant, polystyrene chain growth is regulated with narrow poly-dispersivity to achieve desired composition. This composite is well characterized by various analytical techniques like FTIR, XRD, DSC, SEM, TEM, and TGA. - Highlights: • Nanocomposite of ternary hybrid of GO-TiO{sub 2} with polystyrene. • PS is surface grafted on GO-TiO{sub 2}. • Polymer chain lengths are well regulated by SI-ATRP living polymerization. • Thermal stability of this hybrid is relatively high.

  2. Superconductivity of ternary metal compounds prepared at high pressures

    CERN Document Server

    Shirotani, I

    2003-01-01

    Various ternary metal phosphides, arsenides, antimonides, silicides and germanides have been prepared at high temperatures and high pressures. These ternary metal compounds can be classified into four groups: [1] metal-rich compounds MM' sub 4 X sub 2 and [2] MM'X, [3] non-metal-rich compounds MXX' and [4] MM' sub 4 X sub 1 sub 2 (M and M' = metal element; X and X' = non-metal element). We have studied the electrical and magnetic properties of these materials at low temperatures, and found many new superconductors with the superconducting transition temperature (T sub c) of above 10 K. The metal-rich compound ZrRu sub 4 P sub 2 with a tetragonal structure showed the superconducting transition at around 11 K, and had an upper critical field (H sub c sub 2) of 12.2 tesla (T) at 0 K. Ternary equiatomic compounds ZrRuP and ZrRuSi crystallize in two modifications, a hexagonal Fe sub 2 P-type structure [h-ZrRuP(Si)] and an orthorhombic Co sub 2 P-type structure [o-ZrRuP(Si)]. Both h-ZrRuP and h-ZrRuSi have rather h...

  3. Optimizations of Pt/SiC and W/Si multilayers for the Nuclear Spectroscopic Telescope Array

    DEFF Research Database (Denmark)

    Madsen, K. K.; Harrison, F. A.; Mao, P. H.

    2009-01-01

    function to control the shape of the desired effective area. The NuSTAR multilayers are depth graded with a power-law, di = a/(b + i)c, and we optimize over the total number of bi-layers, N, c, and the maximum bi-layer thickness, dmax. The result is a 10 mirror group design optimized for a flat even energy......The Nuclear Spectroscopic Telescope Array, NuSTAR, is a NASA funded Small Explorer Mission, SMEX, scheduled for launch in mid 2011. The spacecraft will fly two co-aligned conical approximation Wolter-I optics with a focal length of 10 meters. The mirrors will be deposited with Pt/SiC and W....../Si multilayers to provide a broad band reflectivity from 6 keV up to 78.4 keV. To optimize the mirror coating we use a Figure of Merit procedure developed for gazing incidence optics, which averages the effective area over the energy range, and combines an energy weighting function with an angular weighting...

  4. Constitutional studies of the molybdenum-ruthenium-palladium ternary system

    International Nuclear Information System (INIS)

    Cornish, L.A.; Pratt, J.N.

    1997-01-01

    An experimental and computational study has been made of phase equilibria in the Mo-Ru-Pd ternary system. The constitution of annealed binary and ternary alloys was investigated using optical and electron microscopy, X-ray diffraction and SEM phase analysis techniques. Limited thermodynamic measurements were made using the ZrO 2 solid electrolyte e.m.f. method. The data obtained from the various techniques were used to construct a ternary isothermal section at 1473 K. The experimentally determined section is compared with a calculated section for the same temperature, computed using thermodynamic coefficients derived solely from binary system information. Lattice parameters are reported for the b.c.c., f.c.c. and c.p.h. solid solutions and for the σ phase. (orig.)

  5. Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

    Science.gov (United States)

    Cheng, Chih-Hsien; Tzou, An-Jye; Chang, Jung-Hung; Chi, Yu-Chieh; Lin, Yung-Hsiang; Shih, Min-Hsiung; Lee, Chao-Kuei; Wu, Chih-I; Kuo, Hao-Chung; Chang, Chun-Yen; Lin, Gong-Ru

    2016-01-01

    The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-SixC1−x) buffer is demonstrated. The a-SixC1−x buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC1−x buffers exhibit different EL and C-V characteristics because of the extended strain induced interfacial defects. The EL power decays when increasing the Si content of SixC1−x buffer. The C-rich SixC1−x favors the GaN epitaxy and enables the strain relaxation to suppress the probability of Auger recombination. When the SixC1−x buffer changes from Si-rich to C-rich condition, the EL peak wavelengh shifts from 446 nm to 450 nm. Moreover, the uniform distribution contour of EL intensity spreads between the anode and the cathode because the traping density of the interfacial defect gradually reduces. In comparison with the GaN LED grown on Si-rich SixC1−x buffer, the device deposited on C-rich SixC1−x buffer shows a lower turn-on voltage, a higher output power, an external quantum efficiency, and an efficiency droop of 2.48 V, 106 mW, 42.3%, and 7%, respectively. PMID:26794268

  6. Study of System Pressure Dependence on n-TiO2/p-Si Hetrostructure for Photovoltaic Applications

    Directory of Open Access Journals (Sweden)

    S. Ramezani Sani

    2015-01-01

    Full Text Available This study reports the fabrication of n-TiO2/p-Si hetrojunction by deposition of TiO2nanowires on p-Si substrate. The effect of system pressure and the current-voltage (I-V characteristics of n-TiO2/p-si hetrojunction were studied. The morphology of the samples was investigated by Field Emission Scanning Electron Microscopy (FESEM which confirms formation of TiO2 nanowires that their diameters increase with increasing the pressure of system. The I-V characteristics were measured to investigate the hetrojunction effects of under forward and reverse biases at different system pressure by sweeping in the voltage from 0 to +6 V, then to -6 V, and finally reaching 0 V. TiO2/Si diodes   in the system pressure 60 mbar and 30 mbar indicated that a p-n junction formed in the n-TiO2/p-Si hetrojunction. But as the system pressure increased to 1000 mbar, the I-V characteristics became inversed. This treatment can be scribed by the change of the energy band structure of TiO2.

  7. Growth of a New Ternary BON Crystal on Si(100) by Plasma-Assisted MOCVD and Study on the Effects of Fed Gas and Growth Temperature

    Science.gov (United States)

    Chen, G. C.; Lee, S.-B.; Boo, J.-H.

    A new ternary BOxNy crystal was grown on Si(100) substrate at 500°C by low-frequency (100 kHz) radio-frequency (rf) derived plasma-assisted MOCVD with an organoborate precursor. The as-grown deposits were characterized by SEM, TED, XPS, XRD, AFM and FT-IR. The experimental results showed that BOxNy crystal was apt to be formed at N-rich atmosphere and high temperature. The decrease of hydrogen flux in fed gases was of benefit to form BON crystal structure. The crystal structure of BOxNy was as similar to that of H3BO3 in this study.

  8. The Ce-Ni-Si system as a representative of the rare earth-Ni-Si family: Isothermal section and new rare-earth nickel silicides

    Energy Technology Data Exchange (ETDEWEB)

    Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, Moscow, GSP-1, 119991 (Russian Federation); Knotko, A.V.; Garshev, A.V. [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, Moscow, GSP-1, 119991 (Russian Federation); Faculty of Materials Science, Moscow State University, Leninskie Gory, House 1, Building 73, Moscow, GSP-1, 119991 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Geological Faculty Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Nirmala, R. [Indian Institute of Technology Madras, Chennai 600036 (India); Quezado, S.; Malik, S.K. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal, 59082-970 (Brazil)

    2016-11-15

    The Ce-Ni-Si system has been investigated at 870/1070 K by X-ray and microprobe analyses. The existence of the known compounds, i.e.: Ce{sub 2}Ni{sub 15.8}Si{sub 1.2} (Th{sub 2}Ni{sub 17}-type), Ce{sub 2}Ni{sub 15-14}Si{sub 2-3} (Th{sub 2}Zn{sub 17}-type), CeNi{sub 8.6}Si{sub 2.4} (BaCd{sub 11}-type), CeNi{sub 8.8}Si{sub 4.2} (LaCo{sub 9}Si{sub 4}-type), CeNi{sub 6}Si{sub 6} (CeNi{sub 6}Si{sub 6}-type), CeNi{sub 5}Si{sub 1-0.3} (TbCu{sub 7}-type), CeNi{sub 4}Si (YNi{sub 4}Si-type), CeNi{sub 2}Si{sub 2} (CeGa{sub 2}Al{sub 2}-type), Ce{sub 2}Ni{sub 3}Si{sub 5} (U{sub 2}Co{sub 3}Si{sub 5}-type), Ce{sub 3}Ni{sub 6}Si{sub 2} (Ce{sub 3}Ni{sub 6}Si{sub 2}-type), Ce{sub 3}Ni{sub 4}Si{sub 4} (U{sub 3}Ni{sub 4}Si{sub 4}-type), CeNiSi{sub 2} (CeNiSi{sub 2}-type), ~CeNi{sub 1.3}Si{sub 0.7} (unknown type structure), Ce{sub 6}Ni{sub 7}Si{sub 4} (Pr{sub 6}Ni{sub 7}Si{sub 4}-type), CeNiSi (LaPtSi-type), CeNi{sub 0.8-0.3}Si{sub 1.2-1.7} (AlB{sub 2}-type), ~Ce{sub 2}Ni{sub 2}Si (unknown type structure), ~Ce{sub 4.5}Ni{sub 3.5}Si{sub 2} (unknown type structure), Ce{sub 15}Ni{sub 7}Si{sub 10} (Pr{sub 15}Ni{sub 7}Si{sub 10}-type), Ce{sub 5}Ni{sub 1.85}Si{sub 3} (Ce{sub 5}Ni{sub 1.85}Si{sub 3}-type), Ce{sub 6}Ni{sub 1.4}Si{sub 3.4} (Ce{sub 6}Ni{sub 1.67}Si{sub 3}-type), Ce{sub 7}Ni{sub 2}Si{sub 5} (Ce{sub 7}Ni{sub 2}Si{sub 5}-type) and Ce{sub 3}NiSi{sub 3} (Y{sub 3}NiSi{sub 3}-type) has been confirmed in this section. Moreover, the type structure has been determined for ~Ce{sub 2}Ni{sub 2}Si (Mo{sub 2}NiB{sub 2}-type Ce{sub 2}Ni{sub 2.5}Si{sub 0.5}) and ~Ce{sub 4.5}Ni{sub 3.5}Si{sub 2} (W{sub 3}CoB{sub 3}-type Ce{sub 3}Ni{sub 3-2.7}Si{sub 1-1.3}) and new ternary phases Ce{sub 2}Ni{sub 6.25}Si{sub 0.75} (Gd{sub 2}Co{sub 7}-type), CeNi{sub 7-7.6}Si{sub 6-5.4} (GdNi{sub 7}Si{sub 6}-type) and ~Ce{sub 27}Ni{sub 42}Si{sub 31} (unknown type structure) have been identified in this system. Quasi-binary phases, solid solutions, were detected at 870/1070 K for CeNi{sub 5}, CeNi{sub 3} and CeSi

  9. Preparation, properties, and application characteristics of metastable layers of the Ti-Si-C-N system

    International Nuclear Information System (INIS)

    Fella, R.

    1992-10-01

    In the Ti-Si-C and Ti-Si-C-N systems, metastable layers were precipitated by means of non-reactive magnetron sputtering of hot-pressed two-phase TiC/SiC and TiN/SiC targets with 20 mole% and 50 mole% SiC. The preparation parameters were varied as follows: ion bombardment during precipitation (bias sputtering), substrate temperature, and annealing times when annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC layers. Sputtering of targets containing 20% SiC was found to result in monophase fcc layers (NaCl structure). This was documented on the basis of X-ray and electron diffraction patterns. Direct precipitation of targets with 50 mole% SiC resulted in amorphous layers. Increasing the ion bombardment during accretion, raising the substrate temperature, and annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC (layers precipitated directly) resulted in the crystallization of TiC and TiN nanocrystallites, respectively, imbedded in an amorphous SiC matrix. These crystallites were detected both by X-ray and by electron diffractions and by XPS studies. The XPS measurements of crystalline TiC and amorphous SiC reference layers demonstrated the existence of new kinds of carbon interface phases ('pseudocarbide layers') around TiC and amorphous SiC regions, respectively, which have a positive impact on the mechanical properties of the layers. The hardness of the layers can be correlated with the degrees of crystallization and texture. Adhesion and toughness are worse in SiC-bearing layers than PVD TiC and TiN layers, respectively. The application characteristics of the layers were determined by model wear tests relative to 100Cr6 by means of a pin/disk tribometer. N-bearing layers were found to have clearly higher friction coefficients and greater wear than layers without N. (orig.)

  10. Thermal Stability of W-xRe/TiC/SiC Systems (x=0, 5 and 25 at % Re) at High Temperature

    International Nuclear Information System (INIS)

    Roger, J.; Le Petitcorps, Y.; Roger, J.; Audubert, F.

    2009-01-01

    diffusion barrier especially for silicon, but its effect is less notable for carbon. Nevertheless, we can propose some methods to perfect the protection of metallic substrates in the presence of SiC. The first is to use a compound without carbon; the most evident option is TiN. We are actually considering this possibility. Another interesting possibility is to use WC because it is stable in presence of SiC. Temperature is, however, a limiting factor, because this compound WC reacts with W at 1420 K to form W 2 C, which is not stable in the presence of SiC. As a consequence, this carbide can only be used up to 1420 K. The carbon mobility in these two compounds has to be established. (O.M.)

  11. First principles calculation of thermodynamic properties of NaAlSi ternary

    International Nuclear Information System (INIS)

    Qin Jining; Lu Weijie; Zhang Di; Fan Tongxiang

    2012-01-01

    PbFCl-type NaAlSi ternary is a corrosion compound found in aluminum, which is used as a sealing material in sodium sulfur battery. To understand and control the corrosion process, it is important to predict its quantitative properties. In this study, a first-principles calculation has been carried out to calculate its equilibrium lattice parameters, bulk modulus and pressure derivative of bulk modulus by both all-electron full-potential linear augmented plane wave scheme and pseudopotential plane wave scheme within the generalized gradient approximation. The theoretical results show good agreement with the available experimental data. The thermodynamic properties, including the specific heat capacity and entropy with pressure up to 9 GPa, have been investigated for the first time by coupling of density functional perturbation theory and quasiharmonic approximation. The volume and linear thermal expansion coefficients were estimated and the results show that the linear thermal expansion on c-axis is nearly twice as large as that on a-axis within the calculated temperature.

  12. Chemical effects in ion mixing of a ternary system (metal-SiO2)

    Science.gov (United States)

    Banwell, T.; Nicolet, M.-A.; Sands, T.; Grunthaner, P. J.

    1987-01-01

    The mixing of Ti, Cr, and Ni thin films with SiO2 by low-temperature (- 196-25 C) irradiation with 290 keV Xe has been investigated. Comparison of the morphology of the intermixed region and the dose dependences of net metal transport into SiO2 reveals that long range motion and phase formation probably occur as separate and sequential processes. Kinetic limitations suppress chemical effects in these systems during the initial transport process. Chemical interactions influence the subsequent phase formation.

  13. Photoabsorption spectra of (Mo/W)@Au12Si60 clusters from time-dependent DFT calculations

    KAUST Repository

    Mokkath, Junais Habeeb

    2013-11-14

    The electronic structure and photoabsorption spectrum of encapsulated (Mo/W)@Au12Si60 clusters are theoretically investigated via static and time-dependent density functional theory. The photoabsorption spectrum is calculated both at the scalar relativistic and spin-orbit coupling levels. The encapsulated (Mo/W)@Au12 clusters interact with the Si and thus stabilize the Si60 cage. The spin-orbit coupling strongly affects the optical properties of (Mo/W)@Au12 clusters as it leads to a splitting of spectral lines together with an intensity redistribution, whereas the spectra of (Mo/W)@Au12Si60 clusters show hardly any difference. The nanoscale properties thus can be tuned by choosing the endohedral metal atom, while keeping the optical properties unaffected. © 2013 American Chemical Society.

  14. Photoabsorption spectra of (Mo/W)@Au12Si60 clusters from time-dependent DFT calculations

    KAUST Repository

    Mokkath, Junais Habeeb; Schwingenschlö gl, Udo

    2013-01-01

    The electronic structure and photoabsorption spectrum of encapsulated (Mo/W)@Au12Si60 clusters are theoretically investigated via static and time-dependent density functional theory. The photoabsorption spectrum is calculated both at the scalar relativistic and spin-orbit coupling levels. The encapsulated (Mo/W)@Au12 clusters interact with the Si and thus stabilize the Si60 cage. The spin-orbit coupling strongly affects the optical properties of (Mo/W)@Au12 clusters as it leads to a splitting of spectral lines together with an intensity redistribution, whereas the spectra of (Mo/W)@Au12Si60 clusters show hardly any difference. The nanoscale properties thus can be tuned by choosing the endohedral metal atom, while keeping the optical properties unaffected. © 2013 American Chemical Society.

  15. Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

    2015-08-31

    We report the growth and characterization of III-nitride ternary thin films (Al{sub x}Ga{sub 1−x}N, In{sub x}Al{sub 1−x}N and In{sub x}Ga{sub 1−x}N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxy • Growth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures.

  16. Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

    International Nuclear Information System (INIS)

    Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

    2015-01-01

    We report the growth and characterization of III-nitride ternary thin films (Al x Ga 1−x N, In x Al 1−x N and In x Ga 1−x N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxy • Growth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures

  17. Ternary Mixtures of N-Docosane, N-Tricosane and N-Tetracosane Mélanges ternaires de n-docosane, n-tricosane et n-tétracosane

    Directory of Open Access Journals (Sweden)

    Nouar H.

    2006-11-01

    Full Text Available Binary phase diagrams of the systems: n-docosane: n-tricosane (C22H46 : C23H48, n-tricosane: n-tetracosane (C23H48: C24H50 and n-docosane: n-tetracosane (C22H46: C24H50 have been established by means of structural and differential scanning calorimetry analyses. On the basis of these results and of X-ray examination of forty one ternary mixtures, it is proposed the ternary phase diagram (C22H46: C23H48: C24H50 at room temperature. This work has indicated the existence of limited terminal solid solutions near the three pure n-alkanes and three domains of orthorhombic intermediate phases (noted ß' 1, ß'' 1, ß' 2 identical to those observed in the binary systems. X-ray experiments have showed that the phases ß' 1, ß'' 2 situated on the both sides of the middle intermediate phase ß' 1, are isostructural as in the binary systems. Les diagrammes de phases des systèmes binaires : n-docosane : n-tricosane (C22H46 : C23H48, n-tricosane : n-tétracosane (C23H48 : C24H50 et n-docosane : n-tétracosane (C22H46 : C24H50 ont été établis à partir d'analyses thermiques différentielles (ATD et structurales. Sur la base de ces résultats, ainsi que de l'examen aux rayons X de 41 mélanges ternaires, le diagramme de phases du ternaire (C22H46 : C23H48 : C24H50 à température ambiante est proposé. Ce travail a indiqué l'existence de domaines limités de solutions solides au voisinage des trois n-alcanes purs, ainsi que de trois régions de phases intermédiaires orthorhombiques (notées ß' 1, ß 1, ß' 2 identiques à celles observées avec les systèmes binaires. Les analyses aux rayons X ont montré que les phases ß' 1 et ß' 2 situées de part et d'autre de la phase médiane intermédiaire ß1 sont isostructurales, tout comme dans le cas des systèmes binaires.

  18. Thermodynamic calculations in ternary titanium–aluminium–manganese system

    Directory of Open Access Journals (Sweden)

    ANA I. KOSTOV

    2008-04-01

    Full Text Available Thermodynamic calculations in the ternary Ti–Al–Mn system are shown in this paper. The thermodynamic calculations were performed using the FactSage thermochemical software and database, with the aim of determining thermodynamic properties, such as activities, coefficient of activities, partial and integral values of the enthalpies and Gibbs energies of mixing and excess energies at two different temperatures: 2000 and 2100 K. Bearing in mind that no experimental data for the Ti–Al–Mn ternary system have been obtained or reported. The obtained results represent a good base for further thermodynamic analysis and may be useful as a comparison with some future critical experimental results and thermodynamic optimization of this system.

  19. Structures, equilibria and ligand exchange dynamics in the binary and ternary dioxouranium(VI)-ethylenediamine-N-N'-diacetic acid - fluoride system; a potentiometric, NMR and X-ray study

    International Nuclear Information System (INIS)

    Palladino, G.; Szabo, Z.; Fischer, A.; Grenthe, I.

    2005-01-01

    Full text of publication follows: The structure, thermodynamics and kinetics of the binary and ternary Uranyl(VI)- ethylenediamine- N-N'-di-acetate (in the following denoted EDDA) fluoride system have been studied using potentiometry, 1 H, 19 F NMR and a single-crystal X-ray determination. The potentiometric data were obtained using measurements of the free hydrogen ion and fluoride concentrations with glass and fluoride electrodes, respectively. The experimental data were used to deduce stoichiometry and equilibrium constants using a least square refinements programme. The UO 2 2+ - EDDA system could be studied up to -log[H 3 O + ] 3.4, after which a precipitate was formed. The test solutions contained two binary complexes, the uncharged UO 2 (EDDA)(aq) and UO 2 (H 3 EDDA) 3+ , with equilibrium constants log β(UO 2 EDDA) = 11.63 ± 0.02 and log β(UO 2 H 3 EDDA 3+ ) = 1.77 ± 0.04, respectively. By using fluoride as additional ligand the solubility increases because of the formation of very stable ternary complexes that allowed an experimental study over a larger pH range. The structure of the complexes in the ternary system was deduced using a combination of 1 H and 19 F NMR spectroscopy. The 19 F NMR spectra at lower pH, had peaks from the binary fluoride complexes (UO 2 F + , UO 2 F 2 (aq) and UO 2 F 3 - ) that could be used to obtain information on the equilibrium constants in the ternary system; at -log[H 3 O + ] > 4.7 new signals for the complexes (UO 2 ) 2 (EDDA) 2 F 2 2- , and UO 2 (EDDA)F - were observed. The analyses of 1 H NMR spectra indicate clearly that the EDDA ligand is chelate bonded in UO 2 (EDDA)F-. The fluorine exchange between UO 2 (EDDA)F- and UO 2 F 3 - was studied using 19 F NMR line-broadening technique. The experimental rate constant is k obs = k 0 + k 1 [UO 2 F 3 - ], with k 0 (3.24 ± 0.06) 10 2 s -1 and k 1 = (71.2 ± 2.3) 10 3 M -1 s -1 .The rate and the activation parameters for the exchange between UO 2 (EDDA)F - complex and free

  20. Preparation and study of nanostructured TiAlSiN thin films

    Directory of Open Access Journals (Sweden)

    Jakab-Farkas L.

    2011-12-01

    Full Text Available TiAlSiN thin film coatings were deposited by DC reactive magnetron sputtering of TiAlSi target with 40 at.% Ti, 40 at.% Al and 20 at.% Si, performed in N2-Ar gas mixture. The sputtering power used in these experiments was controlled for 400 W. The bias voltage of the substrates was kept at -20 V DC and the temperature at 500 0C. All the samples were prepared with a constant flow rate of Ar and different nitrogen flow rates, which were selected from 1.25 sccm to 4.0 sccm. Nanostructured TiAlSiN coatings were developed on Si(100 and HSS substrates. Microstructure investigation of the coatings was performed by transmission electron microscopy investigation, structure investigation was performed by XRD analysis, and the mechanical properties of the coatings have been tested by ball-on-disk tribological investigation and micro-Vickers hardness measurements. In this paper will be shown that for optimized nitrogen concentration the microstructure of TiAlSiN coating evolve from a competitive columnar growth to a dendritic growth one with very fine nano-lamellae like morphology. The developed nanostructured TiAlSiN coatingshave hardness HV exceeding 40 GPa and show an increased abrasive wear resistance

  1. Enhanced lateral heat dissipation packaging structure for GaN HEMTs on Si substrate

    International Nuclear Information System (INIS)

    Cheng, Stone; Chou, Po-Chien; Chieng, Wei-Hua; Chang, E.Y.

    2013-01-01

    This work presents a technology for packaging AlGaN/GaN high electron mobility transistors (HEMTs) on a Si substrate. The GaN HEMTs are attached to a V-groove copper base and mounted on a TO-3P leadframe. The various thermal paths from the GaN gate junction to the case are carried out for heat dissipation by spreading to protective coating; transferring through the bond wires; spreading in the lateral device structure through the adhesive layer, and vertical heat spreading of silicon chip bottom. Thermal characterization showed a thermal resistance of 13.72 °C/W from the device to the TO-3P package. Experimental tests of a 30 mm gate-periphery single chip packaged in a 5 × 3 mm V-groove Cu base with a 100 V drain bias showed power dissipation of 22 W. -- Highlights: ► An enhanced packaging structure designed for AlGaN/GaN HEMTs on an Si substrate. ► The V-groove copper base is designed on the device periphery surface heat conduction for enhancing Si substrate thermal dissipation. ► The proposed device shows a lower thermal resistance and upgrade in thermal conductivity capability. ► This work provides useful thermal IR imagery information to aid in designing high efficiency package for GaN HEMTs on Si

  2. Microstructure Characterization and Wear-Resistant Properties Evaluation of an Intermetallic Composite in Ni–Mo–Si System

    Directory of Open Access Journals (Sweden)

    Boyuan Huang

    2017-02-01

    Full Text Available Intermetallic compounds have been studied for their potential application as structural wear materials or coatings on engineering steels. In the present work, a newly designed intermetallic composite in a Ni–Mo–Si system was fabricated by arc-melting process with commercially pure metal powders as starting materials. The chemical composition of this intermetallic composite is 45Ni–40Mo–15Si (at %, selected according to the ternary alloy diagram. The microstructure was characterized using optical microscopy (OM, scanning electron microscopy (SEM, X-ray diffraction (XRD, and energy dispersive spectroscopy (EDS, and the wear-resistant properties at room temperature were evaluated under different wear test conditions. Microstructure characterization showed that the composite has a dense and uniform microstructure. XRD results showed that the intermetallic composite is constituted by a binary intermetallic compound NiMo and a ternary Mo2Ni3Si metal silicide phase. Wear test results indicated that the intermetallic composite has an excellent wear-resistance at room-temperature, which is attributed to the high hardness and strong atomic bonding of constituent phases NiMo and Mo2Ni3Si.

  3. Ternary System with Controlled Structure: A New Strategy toward Efficient Organic Photovoltaics.

    Science.gov (United States)

    Cheng, Pei; Wang, Rui; Zhu, Jingshuai; Huang, Wenchao; Chang, Sheng-Yung; Meng, Lei; Sun, Pengyu; Cheng, Hao-Wen; Qin, Meng; Zhu, Chenhui; Zhan, Xiaowei; Yang, Yang

    2018-02-01

    Recently, a new type of active layer with a ternary system has been developed to further enhance the performance of binary system organic photovoltaics (OPV). In the ternary OPV, almost all active layers are formed by simple ternary blend in solution, which eventually leads to the disordered bulk heterojunction (BHJ) structure after a spin-coating process. There are two main restrictions in this disordered BHJ structure to obtain higher performance OPV. One is the isolated second donor or acceptor domains. The other is the invalid metal-semiconductor contact. Herein, the concept and design of donor/acceptor/acceptor ternary OPV with more controlled structure (C-ternary) is reported. The C-ternary OPV is fabricated by a sequential solution process, in which the second acceptor and donor/acceptor binary blend are sequentially spin-coated. After the device optimization, the power conversion efficiencies (PCEs) of all OPV with C-ternary are enhanced by 14-21% relative to those with the simple ternary blend; the best PCEs are 10.7 and 11.0% for fullerene-based and fullerene-free solar cells, respectively. Moreover, the averaged PCE value of 10.4% for fullerene-free solar cell measured in this study is in great agreement with the certified one of 10.32% obtained from Newport Corporation. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Changes of refractive indices in ternary mixtures containing chlorobenzene + n-hexane + (n-heptane or n-octane at 298.15 K

    Directory of Open Access Journals (Sweden)

    M. IGLESIAS

    2004-06-01

    Full Text Available The refractive indices of ternary mixtures of chlorobenzene + n-hexane + (n-heptane or n-octane have been measured at 298.15 K and at atmospheric pressure over the whole composition diagram. Parameters of polynomial equations which represent the composition dependence of physical and derived properties are gathered. The experimental refractive indices and the ternary derived properties are compared with the data obtained using several predictive semi-empirical models. The use of the Soave–Redlich–Kwong (SRK and the Peng–Robinson (PR cubic equations of state with the Van der Waals one-fluid mixing rule, which incorporate different combining rules to predict refractive indices on mixing, are tested against the measured results, good agrement being obtained.

  5. Ternary oxide nanostructures and methods of making same

    Science.gov (United States)

    Wong, Stanislaus S [Stony Brook, NY; Park, Tae-Jin [Port Jefferson, NY

    2009-09-08

    A single crystalline ternary nanostructure having the formula A.sub.xB.sub.yO.sub.z, wherein x ranges from 0.25 to 24, and y ranges from 1.5 to 40, and wherein A and B are independently selected from the group consisting of Ag, Al, As, Au, B, Ba, Br, Ca, Cd, Ce, Cl, Cm, Co, Cr, Cs, Cu, Dy, Er, Eu, F, Fe, Ga, Gd, Ge, Hf, Ho, I, In, Ir, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Os, P, Pb, Pd, Pr, Pt, Rb, Re, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Tc, Te, Ti, Tl, Tm, U, V, W, Y, Yb, and Zn, wherein the nanostructure is at least 95% free of defects and/or dislocations.

  6. Acero de alto silicio producido por inmersión en Al-Si y recocido de difusión

    Directory of Open Access Journals (Sweden)

    Ros-Yáñez, Tanya

    2000-10-01

    Full Text Available It is difficult to process steel sheet with a high Si content (>3.5%Si, mainly because of its brittleness and the appearance of cracks during rolling and oxidation. However, there is a market for this steel in electrical applications because of the favourable influence of Si on magnetostriction and electrical resistivity. As an alternative process, 3% Si-steel substrates were coated with hypereutectic Al-Si-alloys in a "hot-dip simulator" using different preheating and dipping times. The obtained layers were characterised by SEM and EDS analysis. Diffusion annealing experiments were performed to obtain sufficient amount of Si in the steel. It was observed that:

    • intermetallic phases appear in the coating layers as according to the ternary Fe-Si-Al diagram
    • with a double dipping primary silicon crystals are formed in the surface layer
    • the ordered DO3 structure is present if the dipping and/or diffusion time is long enough
    • homogeneous silicon gradients in the whole substrate thickness have not yet been achieved
    • theoretic calculations show that Si-gradient, also have beneficial effects on magnetic behaviour


    Es difícil procesar aceros eléctricos de alto contenido en silicio (>3,5 % Si. Esto se debe principalmente, a problemas de fragilidad, aparición de grietas durante la laminación y oxidación. Sin embargo, existe un importante mercado para este tipo de acero en aplicaciones eléctricas debido a la favorable influencia que ejerce el Si sobre la magnetoestricción, las pérdidas eléctricas y la resistividad eléctrica. Como proceso alternativo, se sumergieron substratos de acero con 3 % de silicio en una aleación hipereutéctica Al-25 % Si, en un simulador de recubrimiento por inmersión en caliente. En los ensayos se utilizaron diferentes tiempos de precalentamiento y de inmersión. En la segunda fase de la investigación se llevaron a cabo recocidos de difusión en el

  7. LiCa{sub 4}Si{sub 4}N{sub 8}F and LiSr{sub 4}Si{sub 4}N{sub 8}F. Nitridosilicate fluorides with a BCT-zeolite-type network structure

    Energy Technology Data Exchange (ETDEWEB)

    Horky, Katrin; Schnick, Wolfgang [Department of Chemistry, Inorganic Solid-State, Chemistry, University of Munich (LMU), Butenandtstrasse 5-13, 81377, Munich (Germany)

    2017-02-17

    LiCa{sub 4}Si{sub 4}N{sub 8}F and LiSr{sub 4}Si{sub 4}N{sub 8}F were synthesized from Si{sub 3}N{sub 4}, LiNH{sub 2}, CaH{sub 2}/SrH{sub 2}, and LiF through a metathesis reaction in a radiofrequency furnace. The crystal structures of both compounds were solved and refined on the basis of single-crystal X-ray diffraction data [LiCa{sub 4}Si{sub 4}N{sub 8}F: P2{sub 1}/c (no. 14), a = 10.5108(3), b = 9.0217(3), c = 10.3574(3) Aa, β = 117.0152(10) , R{sub 1} = 0.0422, wR{sub 2} = 0.0724, Z = 4; LiSr{sub 4}Si{sub 4}N{sub 8}F: P4nc (no. 104), a = 9.3118(4), b = 9.3118(4), c = 5.5216(2) Aa, R{sub 1} = 0.0160, wR{sub 2} = 0.0388, Z = 2]. The silicate substructure of both compounds is built up of vertex-sharing SiN{sub 4} tetrahedra, thereby forming a structure analogous to the BCT zeolite with Ca{sup 2+}/Sr{sup 2+}, Li{sup +}, and F{sup -} ions filling the voids. The crystal structure of LiSr{sub 4}Si{sub 4}N{sub 8}F is homeotypic with that of Li{sub 2}Sr{sub 4}Si{sub 4}N{sub 8}O as it exhibits the same zeolite-type [SiN{sub 2}]{sup 2-} framework, but incorporates LiF instead of Li{sub 2}O. In contrast to the respective Sr compound, LiCa{sub 4}Si{sub 4}N{sub 8}F shows a distortion of the BCT-zeolite-type network as well as an additional site for F. Both F sites in LiCa{sub 4}Si{sub 4}N{sub 8}F exhibit different coordination spheres to LiSr{sub 4}Si{sub 4}N{sub 8}F. The title compounds are the first reported lithium alkaline-earth nitridosilicates containing fluorine. The crystal structures were confirmed by lattice-energy calculations (MAPLE), energy-dispersive X-ray spectroscopy (EDX) measurements, and powder X-ray diffraction. IR spectra confirmed the absence of N-H bonds. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.

    Science.gov (United States)

    Tanaka, Atsunori; Choi, Woojin; Chen, Renjie; Dayeh, Shadi A

    2017-10-01

    Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 7 cm -2 achieved to date in GaN-on-Si is demonstrated. With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Phase relationships in the Er-Mn-Ti ternary system at 773 K

    International Nuclear Information System (INIS)

    Liu Jingqi; Wang Xina; Tang Mengqi; Su Kunpeng; Yang Xiaomao; Li Chunhui; Li Xueqiang

    2009-01-01

    The Phase relationship in the Er-Mn-Ti ternary system at 773 K has been investigated by X-ray powder diffraction analysis with the aid of differential thermal analysis and optical microanalysis techniques in this work. The existence of eight binary compounds Mn 15 Ti 85, αMnTi, βMnTi, Mn 2 Ti, Mn 5 Ti, ErMn 12, Er 6 Mn 23 and ErMn 2 has been confirmed at 773 K in this system. The maximum solid solubility of Ti in Mn is about 8 at%Ti. The homogeneity range of Mn 2 Ti extends from about 31 at% to 39 at% Ti. The maximum solid solubility of Er in Mn 2 Ti phase is about less than 1 at% Er. No ternary compounds were found in this ternary system at 773K. At 773 K, the isothermal section of phase diagram of Er-Mn-Ti ternary system consists of 11 single-phase regions, 19 two-phase regions and 9 three-phase regions.

  10. Pressureless sintering of dense Si3N4 and Si3N4/SiC composites with nitrate additives

    International Nuclear Information System (INIS)

    Kim, J.Y.; Iseki, Takayoshi; Yano, Toyohiko

    1996-01-01

    The effect of aluminum and yttrium nitrate additives on the densification of monolithic Si 3 N 4 and a Si 3 N 4 /SiC composite by pressureless sintering was compared with that of oxide additives. The surfaces of Si 3 N 4 particles milled with aluminum and yttrium nitrates, which were added as methanol solutions, were coated with a different layer containing Al and Y from that of Si 3 N 4 particles milled with oxide additives. Monolithic Si 3 N 4 could be sintered to 94% of theoretical density (TD) at 1,500 C with nitrate additives. The sintering temperature was about 100 C lower than the case with oxide additives. After pressureless sintering at 1,750 C for 2 h in N 2 , the bulk density of a Si 3 N 4 /20 wt% SiC composite reached 95% TD with nitrate additives

  11. Experimental determination of the phase equilibria in the Co-Fe-Zr ternary system

    International Nuclear Information System (INIS)

    Wang, C.P.; Yu, Y.; Zhang, H.H.; Hu, H.F.; Liu, X.J.

    2011-01-01

    Research highlights: → We determined four isothermal sections of the Co-Fe-Zr system from 1000 o C to 1300 o C. → No ternary compound was found in the Co-Fe-Zr ternary system. → The solubility of Fe in the liquid phase at 1300 o C is extremely large. → The (Co, Fe) 2 Zr phase form the continuous solution from Co-Zr side to Fe-Zr side. → The solubility of Zr in the fcc (Co, Fe) phase is extremely small. - Abstract: The phase equilibria in the Co-Fe-Zr ternary system were investigated by means of optical microscopy (OM), electron probe microanalysis (EPMA), X-ray diffraction (XRD), and differential scanning calorimetry (DSC) on equilibrated ternary alloys. Four isothermal sections of the Co-Fe-Zr ternary system at 1300 o C, 1200 o C, 1100 o C and 1000 o C were experimentally established. The experimental results indicate that (1) no ternary compound was found in this system; (2) the solubility of Fe in the liquid phase of the Co-rich corner at 1300 o C is extremely large; (3) the liquid phase in the Zr-rich corner and the (Co,Fe) 2 Zr phase form the continuous solid solutions from the Co-Zr side to the Fe-Zr side; (4) the solubility of Zr in the fcc (Co, Fe) phase is extremely small.

  12. Dy–Mn–Si as a representative of family of ‘Dy–Transition Metal–Si’ systems: Its isothermal sections, empirical rProd. Type: FTPules and new rare-earth manganese silicides

    Energy Technology Data Exchange (ETDEWEB)

    Morozkin, A.V., E-mail: morozkin@general.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Knotko, A.V. [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Geological Faculty, Moscow State University, Leninskie Gory, Moscow 119992 (Russian Federation); Provino, A.; Manfrinetti, P. [INFM and Dipartimento di Chimica e Chimica Industriale, Universita di Genova, Via Dodecaneso 31, 16146 Genova (Italy); Yao, Jinlei; Yuan, Fang; Mozharivskyj, Y. [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4M1 (Canada)

    2013-10-15

    X-ray and microprobe analyses were employed for the investigation of Dy–Mn–Si system at 870/1070/1170 K. The Dy–Mn–Si system, contains the known DyMn{sub 2}Si{sub 2}, DyMnSi and Dy{sub 2}Mn{sub 3}Si{sub 5} compounds and DyMn{sub 4}Si{sub 2}, Dy{sub 2}MnSi{sub 2} and Dy{sub 3}Mn{sub 2}Si{sub 3} were new compounds identified first time and their structure are of the type TmCu{sub 4}Sb{sub 2}, Sc{sub 2}CoSi{sub 2} and Hf{sub 3}Ni{sub 2}Si{sub 3} respectively. The quasi-binary solid solutions were detected at 870/1070/1170 K: the ThMn{sub 12}-type Dy{sub 8}Mn{sub 87}Si{sub 5}, Th{sub 6}Mn{sub 23}-type Dy{sub 23}Mn{sub 72}Si{sub 5}, MgCu{sub 2}-type Dy{sub 33}Mn{sub 58}Si{sub 9} and AlB{sub 2}-type Dy{sub 38}Mn{sub 2}Si{sub 58}. The other binary compounds of the Dy–Mn–Si system do not show any visible solubility. New phases R{sub 2}MnSi{sub 2} and R{sub 3}Mn{sub 2}Si{sub 3} (R=Gd, Tb, Ho–Tm) were found out and their structure of the type Sc{sub 2}CoSi{sub 2} and Hf{sub 3}Ni{sub 2}Si{sub 3} respectively. The specific features of ‘Dy–Transition Metal–Si’ systems were discussed. - Graphical abstract: The isothermal section of Dy–Mn–Si contains the known DyMn{sub 2}Si{sub 2}, DyMnSi, Dy{sub 2}Mn{sub 3}Si{sub 5} and new TmCu{sub 4}Sb{sub 2}-type DyMn{sub 4}Si{sub 2}, Sc{sub 2}CoSi{sub 2}-type Dy{sub 2}MnSi{sub 2} and Hf{sub 3}Ni{sub 2}Si{sub 3}-type Dy{sub 3}Mn{sub 2}Si{sub 3} ternary compounds. The ternary solid solution based on the binary compounds of the Dy–Mn and Dy–Si systems: the ThMn{sub 12}-type Dy{sub 8}Mn{sub 87}Si{sub 5}, Th{sub 6}Mn{sub 23}-type Dy{sub 23}Mn{sub 72}Si{sub 5}, MgCu{sub 2}-type Dy{sub 33}Mn{sub 58}Si{sub 9} and AlB{sub 2}-type Dy{sub 38}Mn{sub 2}Si{sub 58}. The other binary compounds of the Dy–Mn–Si system do not show any visible solubility. New Sc{sub 2}CoSi{sub 2}-type R{sub 2}MnSi{sub 2} and Hf{sub 3}Ni{sub 2}Si{sub 3}-type R{sub 3}Mn{sub 2}Si{sub 3} phases were discovered for R=Gd, Tb, Ho–Tm. Display Omitted

  13. Analysis on the sequence of formation of Ti{sub 3}SiC{sub 2} and Ti{sub 3}SiC{sub 2}/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Radhakrishnan, R.; Bhaduri, S.B. [Idaho Univ., Moscow, ID (United States). Dept. of Mining and Metallurgy; Henager, C.H. Jr. [Pacific Northwest Lab., Richland, WA (United States)

    1995-05-01

    Ti{sub 3}SiC{sub 2}, a compound in the ternary Ti-Si-C system, is reported to be ductile. This paper reports the sequence of formation of Ti{sub 3}SiC{sub 2} and Ti{sub 3}SiC{sub 2}/SiC composites involving either combustion synthesis or by displacement reaction, respectively. Onset of exothermic reaction temperatures were determined using Differential Thermal Analysis (DTA). Phases present after the exothermic temperatures were analyzed by X-Ray diffraction. Based on these observations, a route to formation of Ti{sub 3}SiC{sub 2} and Ti{sub 3}SiC{sub 2}/SiC composites is proposed for the two`s thesis methods.

  14. State diagram of U-Al-Si as a basis for analysis of the processes in nuclear fuel compositions based on U(Al, Si)3 and U3Si compounds

    International Nuclear Information System (INIS)

    Chebotarev, N.T.; Konovalov, L.N.; Zhmak, V.A.; Chebotarev, Ya.N.

    1996-01-01

    Results of studies into the Al-UAl 3 -USi 3 -Si of the U-Al-Si ternary system are presented. It is established that phase equilibrium between the intermetallic compound U(Al, Si) 3 and the aluminium-silicon alloys may be presented in form of conodes on the isothermal cross-section of the state diagram. It is shown that the U(Al, Si) 3 intermetallic compound, containing up to 6.5 at.% silicon, interacts both with liquid and solid aluminium with the U(Al, Si) 4 phase formation [ru

  15. Phase formation in alloy-type anode materials in the quaternary system Li-Sn-Si-C

    Energy Technology Data Exchange (ETDEWEB)

    Druee, Martin; Seyring, Martin [Jena Univ. (Germany). Otto Schott Inst. of Materials Research; Liang, Song-Mao; Kozlov, Artem; Schmid-Fetzer, Rainer [Clausthal Univ. of Technology, Clausthal-Zellerfeld (Germany). Inst. of Metallurgy; Song, Xiaoyan [Beijing Univ. of Technology (China). Key Lab. of Advanced Functional Materials; Rettenmayr, Markus [Jena Univ. (Germany). Otto Schott Inst. of Materials Research; Jena Univ. (Germany). Center for Energy and Environmental

    2017-11-15

    Investigations on the thermodynamics of alloy-type anode materials have been carried out for the quaternary Li-C-Si-Sn system. Phase equilibria and phase stabilities were characterized in the binary subsystems Li-C, Li-Si, Li-Sn. The Calphad method was first used to optimize or completely re-establish all binary subsystems containing Li. For reasons of consistency, the binary subsystem Si-C had to be revisited and its Calphad description was modified. The ternary phase diagrams were then tentatively calculated by extrapolation from the binary subsystems and confirmed by key experiments. No ternary compounds were found. In order to verify the applicability of the anode materials in real batteries, some of the materials were nanostructured by ball milling and spark plasma sintering, the corresponding nanostructures were characterized. Theoretical predictions that nanograined Li{sub 2}C{sub 2} can also be used as cathode material were verified experimentally. The methodologies worked out in the present project (e.g. nanoscale structure transmission electron microscopy analysis, glow discharge optical emission spectroscopy) were also employed in other projects and led to publications concerning other materials such as Mg alloys, carbon nanofibers and an Mn-based antiperovskite.

  16. Phase relations in the SiC-Al2O3-Pr2O3 system

    International Nuclear Information System (INIS)

    Pan, W.; Wu, L.; Jiang, Y.; Huang, Z.

    2016-01-01

    Phase relations in the Si-Al-Pr-O-C system, including the SiC-Al 2 O 3 -Pr 2 O 3 , the Al 2 O 3 -Pr 2 O 3 -SiO 2 and the SiC-Al 2 O 3 -Pr 2 O 3 -SiO 2 subsystems, were determined by means of XRD phase analysis of solid-state-reacted samples fabricated by using SiC, Al 2 O 3 , Pr 2 O 3 and SiO 2 powders as the starting materials. Subsolidus phase diagrams of the systems were presented. Two Pr-aluminates, namely PrAlO 3 (PrAP) and PrAl 11 O 18 (β(Pr) β-Al 2 O 3 type) were formed in the SiC-Al 2 O 3 -Pr 2 O 3 system. SiC was compatible with both of them. Pr-silicates of Pr 2 SiO 5 , Pr 2 Si 2 O 7 and Pr 9.33 Si 6 O 26 (H(Pr) apatite type) were formed owing to presence of SiO 2 impurity in the SiC powder. The presence of the SiO 2 extended the ternary system of SiC-Al 2 O 3 -Pr 2 O 3 into a quaternary system of SiC-Al 2 O 3 -SiO 2 -Pr 2 O 3 (Si-Al-Pr-O-C). SiC was compatible with Al 2 O 3 , Pr 2 O 3 and the Pr-silicates. The effect of SiO 2 on the phase relations and liquid phase sintering of SiC ceramics was discussed.

  17. Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems

    Science.gov (United States)

    Lozovoy, Kirill A.; Kokhanenko, Andrey P.; Voitsekhovskii, Alexander V.

    2018-03-01

    Nowadays using of tin as one of the deposited materials in GeSi/Sn/Si, GeSn/Si and GeSiSn/Si material systems is one of the most topical problems. These materials are very promising for various applications in nanoelectronics and optoelectronics due to possibility of band gap management and synthesis of direct band semiconductors within these systems. However, there is a lack of theoretical investigations devoted to the peculiarities of germanium on silicon growth in the presence of tin. In this paper a new theoretical approach for modeling growth processes of binary and ternary semiconductor compounds during the molecular beam epitaxy in these systems is presented. The established kinetic model based on the general nucleation theory takes into account the change in physical and mechanical parameters, diffusion coefficient and surface energies in the presence of tin. With the help of the developed model the experimentally observed significant decrease in the 2D-3D transition temperatures for GeSiSn/Si system compared to GeSi/Si system is theoretically explained for the first time in the literature. Besides that, the derived expressions allow one to explain the experimentally observed temperature dependencies of the critical thickness, as well as to predict the average size and surface density of quantum dots for different contents and temperatures in growth experiment, that confirms applicability of the model proposed. Moreover, the established model can be easily applied to other material systems in which the Stranski-Krastanow growth mode occurs.

  18. Mechanisms controlling temperature dependent mechanical and electrical behavior of SiH4 reduced chemically vapor deposited W

    International Nuclear Information System (INIS)

    Joshi, R.V.; Prasad, V.; Krusin-Elbaum, L.; Yu, M.; Norcott, M.

    1990-01-01

    The effects of deposition temperature on growth, composition, structure, adhesion properties, stress, and resistivity of chemically vapor deposited W deposited purely by SiH 4 reduction of WF 6 are discussed. At lower deposition temperatures, due to incomplete Si reduction reaction, a small amount of Si is incorporated in the film. This elemental Si in W is responsible for the observed high stresses and high resistivities over a wide temperature range. With the increase in the deposition temperature, the conversion of incorporated Si as well as the initial Si reduction are taking place, stimulating increased grain growth and thereby relieving stress and reducing resistivity. The optimum values for stress and resistivity are achieved around 500 degree C, as Si content is at its minimum. At higher temperatures the reaction between residual Si and W, is the prime cause of resistivity increase

  19. Enhancing the Photovoltage of Ni/ n-Si Photoanode for Water Oxidation through a Rapid Thermal Process.

    Science.gov (United States)

    Li, Shengyang; She, Guangwei; Chen, Cheng; Zhang, Shaoyang; Mu, Lixuan; Guo, Xiangxin; Shi, Wensheng

    2018-03-14

    The Ni in the Ni/ n-Si photoanode can not only protect Si from corrosion, but also catalyze the water oxidation reaction. However, the high density of interface states at the Ni/ n-Si interface could pin the Fermi level of silicon, which will lower the Schottky barrier height of the Ni/ n-Si. As a result, a low photovoltage and consequent high onset potential of Ni/ n-Si photoanode for water oxidation were generated. In this study, the interfacial states of the Ni/ n-Si photoanodes were efficiently diminished through a rapid thermal process (RTP). Calculated from the Mott-Schottky plots, the Schottky barrier height of Ni/ n-Si was increased from 0.58 to 0.78 eV after RTP. Under the illumination of 100 mW cm -2 of the Xe lamp, the onset potential of the Ni/ n-Si photoanode for water oxidation was negatively shifted for 150 mV after RTP. Besides, the RTP-treated Ni/ n-Si photoanode exhibited a high stability during the PEC water oxidation of 8 h in 1 M KOH solution.

  20. Thermodynamic modeling of Al–U–X (X = Si,Zr)

    International Nuclear Information System (INIS)

    Rabin, Daniel; Shneck, Roni Z.; Rafailov, Gennady; Dahan, Isaac; Meshi, Louisa; Brosh, Eli

    2015-01-01

    Highlights: • Thermodynamic models of the U–Al–Si and U–Al–Zr systems were constructed. • The extrapolation methods of the ternary liquid phase were explored. • The order–disorder transition of the U(Al,Si) 3 phase was modeled. • New experiments fix the composition of U(Al,Si) 3 in equilibrium with Al and Si. • Effects of Si on microstructures of solidified U–Al alloys are clarified. - Abstract: Thermodynamic models are constructed for the U–Al–Si and U–A–Zr ternary alloy systems using the CALPHAD (CALculation of PHAse Diagrams) method. For the U–Al–Zr system the modeling covers only the aluminum-rich corner (from 100 at% to 67 at% Al) and is based only on literature data. For the U–Al–Si system, the whole range of compositions is covered and new key experiments were done in the uranium-poor region of the U–Al–Si system. These experiments have shown that under conditions of equilibrium with Al and Si, the Si-content of the U(Al,Si) 3 is significantly higher than reported by earlier works. Different extrapolation methods were tried for the Gibbs energy of the liquid phase. However, it was found that for the U–Al–Si and U–Al–Zr systems, symmetric Muggianu method and the asymmetric method by Hillert give similar predictions. The constructed thermodynamic database was investigated by calculating isothermal sections, vertical sections and the liquidus projection. The calculated diagrams are in reasonable agreement with experimental data. Finally, solidification simulation (Scheil simulation) was done in order to assess the phases obtained in solidification as a function of the silicon addition to U–Al alloys

  1. Calculation of solidification microstructure maps for the system Al-Fe-Si

    International Nuclear Information System (INIS)

    Gilgien, P.

    1996-01-01

    Computer programs have been developed in order to calculate solidification microstructure maps for binary and ternary alloys. These programs are based on recent analytical models for the constrained growth of dendrites and eutectics. Due to the importance of phase diagrams data, programs for the calculation of growth kinetics are coupled with ThermoCalc, a commercial software for phase diagram calculations. These programs have been used to calculate a solidification microstructure map for the Al-Fe system from 0 to 4 at%Fe. Comparison of the calculated results with an experimental solidification microstructure map from the literature shows that all microstructure transitions were predicted. Nevertheless there remain significant discrepancies between some calculated and experimental transition velocities. The programs were also used to calculate solidification microstructure maps in the Al-rich corner of the Al-Fe-Si system (0 to 8 at% Fe and 0 to 8 at% Si). In this case also, calculated results were in satisfactory agreement with experimental solidification microstructure maps, although the comparison was only partial since experimental ternary microstructure maps are less complete than for the binary system, and because the available thermodynamic database does not, as yet, include metastable phases. Laser surface remelting experiments were carried out on an Al-4 at% Fe alloy in order to link results from the literature, obtained at high solidification rates by laser surface remelting and at low solidification rates by Bridman experiments. Finally, Bridman experiments were carried out with an Al-2.63 wt% Fe alloy in order to determine the critical velocity at which a planar Al-Al 13 Fe 4 eutectic front is destabilised in a cellular eutectic by a small amount of Si. The critical solidification velocity thus obtained was in agreement with a criterion of constitutional undercooling. (author) figs., tabs., refs

  2. The chemical composition and band gap of amorphous Si:C:N:H layers

    Energy Technology Data Exchange (ETDEWEB)

    Swatowska, Barbara, E-mail: swatow@agh.edu.pl [AGH University of Science and Technology, Department of Electronics, Mickiewicza Av. 30, 30-059 Krakow (Poland); Kluska, Stanislawa; Jurzecka-Szymacha, Maria [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Mickiewicza Av. 30, 30-059 Krakow (Poland); Stapinski, Tomasz [AGH University of Science and Technology, Department of Electronics, Mickiewicza Av. 30, 30-059 Krakow (Poland); Tkacz-Smiech, Katarzyna [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Mickiewicza Av. 30, 30-059 Krakow (Poland)

    2016-05-15

    Highlights: • Six type of amorphous hydrogenated films were obtained and analysed. • Investigated chemical bondings strongly influenced energy gap values. • Analysed layers could be applied as semiconductors and also as dielectrics. - Abstract: In this work we presented the correlation between the chemical composition of amorphous Si:C:N:H layers of various content of silicon, carbon and nitrogen, and their band gap. The series of amorphous Si:C:N:H layers were obtained by plasma assisted chemical vapour deposition method in which plasma was generated by RF (13.56 MHz, 300 W) and MW (2.45 GHz, 2 kW) onto monocrystalline silicon Si(001) and borosilicate glass. Structural studies were based on FTIR transmission spectrum registered within wavenumbers 400–4000 cm{sup −1}. The presence of Si−C, Si−N, C−N, C=N, C=C, C≡N, Si−H and C−H bonds was shown. The values band gap of the layers have been determined from spectrophotometric and ellipsometric measurements. The respective values are contained in the range between 1.64 eV – characteristic for typical semiconductor and 4.21 eV – for good dielectric, depending on the chemical composition and atomic structure of the layers.

  3. Double Z-scheme ZnO/ZnS/g-C3N4 ternary structure for efficient photocatalytic H2 production

    Science.gov (United States)

    Dong, Zhifang; Wu, Yan; Thirugnanam, Natarajan; Li, Gonglin

    2018-02-01

    In the present work, a novel ZnO/ZnS/g-C3N4 ternary nanocomposite with double Z-scheme heterojunction has been designed via a two-step facile chemical conversion route. The spherical ZnS nanoparticles were uniformly loaded onto ZnO nanoflowers surface. And then the ZnO/ZnS nanocomposite was further hybridized with g-C3N4 nanosheets. Ternary ZnO/ZnS/g-C3N4 nanocomposite displays the largest specific surface area (about 76.2 m2/g), which provides plentiful activated sites for photocatalytic reaction. Furthermore, the ternary material exhibits the highest methylene blue photodegradation rate of about 0.0218 min-1 and the optimum photocatalytic H2 production (1205 μmol/g) over water splitting at 4 h under solar light irradiation. Moreover, it showed the highest photocurrent effect and the minimum charge-transfer resistance. These results implied that the higher photoactivity of ZnO/ZnS/g-C3N4 nanocomposite could be attributed to the multi-steps charge transfer and effective electron-hole separation in the double Z-scheme system.

  4. Contribution to the benchmark for ternary mixtures: Measurement of diffusion and Soret coefficients of ternary system tetrahydronaphtalene-isobutylbenzene-n-dodecane with mass fractions 80-10-10 at 25 °C.

    Science.gov (United States)

    Galand, Quentin; Van Vaerenbergh, Stéfan

    2015-04-01

    This paper provides the molecular diffusion and Soret coefficients of the ternary system 1,2,3,4-tetrahydronaphtalene, isobutylbenzene, n -dodecane system at mass fractions 0.8-0.1-0.1 and temperature 25 (°)C for implementation into the benchmark presented in this topical issue. The Soret coefficients are determined by digital interferometry using the data of DSC-DCMIX microgravity experiment. The method used takes into account the influence of the thermal field on the Soret separations and the selection of the image processing techniques results in reproducible Soret coefficients.The diffusion coefficients are obtained by the Open Ended Capillary technique The fitting of the data collected through a set of two complementary experimental runs allows retrieving the four Fickian diffusion coefficients.

  5. Tungsten chemical vapor deposition characteristics using SiH4 in a single wafer system

    International Nuclear Information System (INIS)

    Rosler, R.S.; Mendonca, J.; Rice, M.J. Jr.

    1988-01-01

    Several workers have recently begun using silane as a high-rate, low-temperature alternative to hydrogen for the reduction of WF 6 in the chemical vapor deposition of W. The deposition and film characteristics of both selective and blanket W using this new chemistry are explored in a radiantly heated single wafer system using closed-loop temperature control with a thermocouple in direct contact with the backside of the wafer. Selective W deposition rates of up to 1.5 μm/min were measured over the temperature range 250--550 0 C with blanket W rates typically 2--5 x lower. Resistivity is in the 10--15 μΩcm range at 300 0 C for SiH 4 /WF 6 ratios of 0.2 to 1.0, while above 400 0 C the range is 7.5--8.5 μΩcm. Si content in the W films is quite low at 10 16 to 10 17 atoms/cm 3 . Adhesion to silicon is excellent at temperatures of 350 0 C and above. Selective W using SiH 4 reduction for doped silicon contact fill shows none of the consumption or encroachment problems common to H 2 reduction, although selectivity is more sensitive. Contact resistance for p + and n + silicon contacts are comparable to aluminum controls and to previously published data. Blanket deposition into narrow geometries gives ≥0% step coverage and without keyholes in the 250--450 0 C deposition temperature range. For low-SiH 4 flows, deposition at 500 0 C causes small keyholes, while at 550 0 C even larger keyholes result. At higher SiH 4 flows, keyholes are typically not seen from 250 to 550 0 C

  6. Low-velocity Shocks Traced by Extended SiO Emission along the W43 Ridges: Witnessing the Formation of Young Massive Clusters

    Science.gov (United States)

    Nguyen-Lu'o'ng, Q.; Motte, F.; Carlhoff, P.; Louvet, F.; Lesaffre, P.; Schilke, P.; Hill, T.; Hennemann, M.; Gusdorf, A.; Didelon, P.; Schneider, N.; Bontemps, S.; Duarte-Cabral, A.; Menten, K. M.; Martin, P. G.; Wyrowski, F.; Bendo, G.; Roussel, H.; Bernard, J.-P.; Bronfman, L.; Henning, T.; Kramer, C.; Heitsch, F.

    2013-10-01

    The formation of high-mass stars is tightly linked to that of their parental clouds. Here, we focus on the high-density parts of W43, a molecular cloud undergoing an efficient event of star formation. Using a column density image derived from Herschel continuum maps, we identify two high-density filamentary clouds, called the W43-MM1 and W43-MM2 ridges. Both have gas masses of 2.1 × 104 M ⊙ and 3.5 × 104 M ⊙ above >10^{23}\\, {{cm}^{-2}} and within areas of ~6 and ~14 pc2, respectively. The W43-MM1 and W43-MM2 ridges are structures that are coherent in velocity and gravitationally bound, despite their large velocity dispersion measured by the N2H+ (1-0) lines of the W43-HERO IRAM large program. Another intriguing result is that these ridges harbor widespread (~10 pc2) bright SiO (2-1) emission, which we interpret to be the result of low-velocity shocks (models to demonstrate that a small percentage (10%) of Si atoms in low-velocity shocks, observed initially in gas phase or in grain mantles, can explain the observed SiO column density in the W43 ridges. The spatial and velocity overlaps between the ridges of high-density gas and the shocked SiO gas suggest that ridges could be forming via colliding flows driven by gravity and accompanied by low-velocity shocks. This mechanism may be the initial conditions for the formation of young massive clusters.

  7. Experimental investigation of phase equilibria in the Zr-Cu-Ni ternary system

    International Nuclear Information System (INIS)

    Yang, Mujin; Wang, Cuiping; Yang, Shuiyuan; Shi, Zhan; Han, Jiajia; Liu, Xingjun

    2017-01-01

    The phase equilibria in the Zr-Cu-Ni ternary system are investigated combined with X-ray diffraction, electron probe micro-analysis and differential scanning calorimetry. Two isothermal sections of the Zr-Cu-Ni ternary system at 1 000 C and 1 100 C are experimentally established. Most of the binary intermetallic compounds, e.g. Zr 7 Ni 10 , ZrNi, ZrNi 5 , Zr 14 Cu 51 , and Zr 2 Cu 9 , show a remarkable ternary solubility. A new ternary compound named τ 3 (Zr 31.1-30.7 . Cu 28.5-40.3 Ni 40.4-29.0 ) is detected at 1 000 C and dissolved at 1 020 C because the nearby large liquid phase field further expands. The newly determined phase equilibria will provide important information for both thermodynamic assessment and alloy design of Zr-based metallic glass.

  8. LOW-VELOCITY SHOCKS TRACED BY EXTENDED SiO EMISSION ALONG THE W43 RIDGES: WITNESSING THE FORMATION OF YOUNG MASSIVE CLUSTERS

    International Nuclear Information System (INIS)

    Nguyen-Luong, Q.; Martin, P. G.; Motte, F.; Louvet, F.; Hill, T.; Hennemann, M.; Didelon, P.; Carlhoff, P.; Schilke, P.; Lesaffre, P.; Gusdorf, A.; Schneider, N.; Bontemps, S.; Duarte-Cabral, A.; Menten, K. M.; Wyrowski, F.; Bendo, G.; Roussel, H.; Bernard, J.-P.; Bronfman, L.

    2013-01-01

    The formation of high-mass stars is tightly linked to that of their parental clouds. Here, we focus on the high-density parts of W43, a molecular cloud undergoing an efficient event of star formation. Using a column density image derived from Herschel continuum maps, we identify two high-density filamentary clouds, called the W43-MM1 and W43-MM2 ridges. Both have gas masses of 2.1 × 10 4 M ☉ and 3.5 × 10 4 M ☉ above >10 23 cm -2 and within areas of ∼6 and ∼14 pc 2 , respectively. The W43-MM1 and W43-MM2 ridges are structures that are coherent in velocity and gravitationally bound, despite their large velocity dispersion measured by the N 2 H + (1-0) lines of the W43-HERO IRAM large program. Another intriguing result is that these ridges harbor widespread (∼10 pc 2 ) bright SiO (2-1) emission, which we interpret to be the result of low-velocity shocks (≤10 km s –1 ). We measure a significant relationship between the SiO (2-1) luminosity and velocity extent and show that it distinguishes our observations from the high-velocity shocks associated with outflows. We use state-of-the-art shock models to demonstrate that a small percentage (10%) of Si atoms in low-velocity shocks, observed initially in gas phase or in grain mantles, can explain the observed SiO column density in the W43 ridges. The spatial and velocity overlaps between the ridges of high-density gas and the shocked SiO gas suggest that ridges could be forming via colliding flows driven by gravity and accompanied by low-velocity shocks. This mechanism may be the initial conditions for the formation of young massive clusters

  9. Duckweed does not improve the efficiency of municipal wastewater treatment in lemna system plants / Rzęsa nie poprawia efektywności oczyszczania ścieków komunalnych w oczyszczalniach typu Lemna System

    Directory of Open Access Journals (Sweden)

    Ozimek Teresa

    2015-09-01

    Full Text Available Badania prowadzono w trzech czyszczalniach hydrofi towych z powierzchniowym przepływem ścieków typu Lemna System, zbudowanych według projektu Lemna Corporation. Składają się one ze stawu napowietrzanego i stawu rzęsowego wyposażonego w system barier mających na celu równomierne rozmieszczenie roślin. Stawy poprzedzone są osadnikiem wstępnym. Według projektantów odpowiednia praca tych oczyszczalni związana jest z występowaniem rzęsy na powierzchni stawu rzęsowego. Badano efektywność oczyszczania ścieków komunalnych w trzech oczyszczalniach Lemna System usytuowanych w centralnej Polsce ze szczególnym uwzględnieniem roli stawu rzęsowego i samej rzęsy. Oczyszczalnie różniły się między sobą występowaniem rzęsy. W dwóch z nich (w Rakowie i Bąkowcu w trakcie całego okresu badań rzęsa nie występowała, natomiast w trzeciej (w Falęcinie Starym w okresie wegetacyjnym pokrywała do 90%.powierzchni stawu. Efektywność oczyszczanie ścieków nie różniła się w oczyszczalni z rzęsą i bez rzęsy. Rzęsa nie wpływała istotnie na efektywność oczyszczania ścieków. We wszystkich oczyszczalniach główną rolę w redukcji zanieczyszczeń odgrywał staw napowietrzany

  10. Fabrication of porous ethyl cellulose microspheres based on the acetone-glycerin-water ternary system: Controlling porosity via the solvent-removal mode.

    Science.gov (United States)

    Murakami, Masahiro; Matsumoto, Akihiro; Watanabe, Chie; Kurumado, Yu; Takama, Masashi

    2015-08-01

    Porous ethyl cellulose (EC) microspheres were prepared from the acetone-glycerin-water ternary system using an oil/water (O/W)-type emulsion solvent extraction method. The O/ W type emulsion was prepared using acetone dissolved ethyl cellulose as an oil phase and aqueous glycerin as a water phase. The effects of the different solvent extraction modes on the porosity of the microspheres were investigated. The specific surface area of the porous EC microspheres was estimated by the gas adsorption method. When the solvent was extracted rapidly by mixing the emulsion with water instantaneously, porous EC microspheres with a maximum specific surface area of 40.7±2.1 m2/g were obtained. On the other hand, when water was added gradually to the emulsion, the specific surface area of the fabricated microspheres decreased rapidly with an increase in the infusion period, with the area being 25-45% of the maximum value. The results of an analysis of the ternary phase diagram of the system suggested that the penetration of water and glycerin from the continuous phase to the dispersed phase before solidification affected the porosity of the fabricated EC microspheres.

  11. Corrosion behaviour of electrodeposited nanocrystalline Ni-W and Ni-Fe-W alloys

    International Nuclear Information System (INIS)

    Sriraman, K.R.; Ganesh Sundara Raman, S.; Seshadri, S.K.

    2007-01-01

    The present work deals with evaluation of corrosion behaviour of electrodeposited nanocrystalline Ni-W and Ni-Fe-W alloys. Corrosion behaviour of the coatings deposited on steel substrates was studied using polarization and electrochemical impedance spectroscopy techniques in 3.5% NaCl solution while their passivation behaviour was studied in 1N sulphuric acid solution. The corrosion resistance of Ni-W alloys increased with tungsten content up to 7.54 at.% and then decreased. In case of Ni-Fe-W alloys it increased with tungsten content up to 9.20 at.% and then decreased. The ternary alloy coatings exhibited poor corrosion resistance compared to binary alloy coatings due to preferential dissolution of iron from the matrix. Regardless of composition all the alloys exhibited passivation behaviour over a wide range of potentials due to the formation of tungsten rich film on the surface

  12. Performance study of SKIROC2/A ASIC for ILD Si-W ECAL

    Science.gov (United States)

    Suehara, T.; Sekiya, I.; Callier, S.; Balagura, V.; Boudry, V.; Brient, J.-C.; de la Taille, C.; Kawagoe, K.; Irles, A.; Magniette, F.; Nanni, J.; Pöschl, R.; Yoshioka, T.

    2018-03-01

    The ILD Si-W ECAL is a sampling calorimeter with tungsten absorber and highly segmented silicon layers for the International Large Detector (ILD), one of the two detector concepts for the International Linear Collider. SKIROC2 is an ASIC for the ILD Si-W ECAL. To investigate the issues found in prototype detectors, we prepared dedicated ASIC evaluation boards with either BGA sockets or directly soldered SKIROC2. We report a performance study with the evaluation boards, including signal-to-noise ratio and TDC performance with comparing SKIROC2 and an updated version, SKIROC2A.

  13. Phase equilibria of the Mo-Al-Ho ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yitai; Chen, Xiaoxian; Liu, Hao [Guangxi Univ., Nanning (China). College of Materials Science and Engineering; Guangxi Univ., Nanning (China). Guangxi Key Laboratory of Processing for Non-ferrous Metal and Featured Materials; Zhan, Yongzhong [Guangxi Univ., Nanning (China). College of Materials Science and Engineering; Guangxi Univ., Nanning (China). Guangxi Key Laboratory of Processing for Non-ferrous Metal and Featured Materials; Guangxi Univ., Nanning (China). Center of Ecological Collaborative Innovation for Aluminum Industry

    2017-08-15

    Investigation into the reactions and phase equilibria of transition metal elements (i.e. Mo, Zr, Cr, V and Ti), Al and rare earths is academically and industrially important for the development of both refractory alloys and lightweight high-temperature materials. In this work, the equilibria of the Mo-Al-Ho ternary system at 773 K have been determined by using X-ray powder diffraction and scanning electron microscopy equipped with energy dispersive X-ray analysis. A new ternary phase Al{sub 4}Mo{sub 2}Ho has been found and the other ternary phase Al{sub 43}Mo{sub 4}Ho{sub 6} is observed. Ten binary phases in the Al-Mo and Al-Ho systems, including Al{sub 17}Mo{sub 4} rather than Al{sub 4}Mo, have been determined to exist at 773 K. The homogeneity ranges of AlMo{sub 3} and Al{sub 8}Mo{sub 3} phase are 7.5 at.% and 1 at.%, respectively. According to the phase-disappearing method, the maximum solubility of Al in Mo is about 16 at.%.

  14. Effects of Si content on microstructure and mechanical properties of TiAlN/Si3N4-Cu nanocomposite coatings

    Science.gov (United States)

    Feng, Changjie; Hu, Shuilian; Jiang, Yuanfei; Wu, Namei; Li, Mingsheng; Xin, Li; Zhu, Shenglong; Wang, Fuhui

    2014-11-01

    TiAlN/Si3N4-Cu nanocomposite coatings of various Si content (0-5.09 at.%) were deposited on AISI-304 stainless steel by DC reactive magnetron sputtering technique. The chemical composition, microstructure, mechanical and tribological properties of these coatings were systematically investigated by means of X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), nanoindentation tester, a home-made indentation system, a scratch tester and a wear tester. Results indicated that with increasing Si content in these coatings, a reduction of grain size and surface roughness, a transformation of the (1 1 1) preferred orientation was detected by XRD and FESEM. Furthermore the hardness of these coatings increase from 9.672 GPa to 18.628 GPa, and the elastic modulus reveal the rising trend that increase from 224.654 GPa to 251.933 GPa. However, the elastic modulus of TiAlN/Si3N4-Cu coating containing 3.39 at.% Si content dropped rapidly and changed to about 180.775 GPa. The H3/E2 ratio is proportional to the film resistance to plastic deformation. The H3/E2 ratio of the TiAlN/Si3N4-Cu coating containing 3.39 at.% Si content possess of the maximum of 0.11 GPa, and the indentation test indicate that few and fine cracks were observed from its indentation morphologies. The growth pattern of cracks is mainly bending growing. The present results show that the best toughness is obtained for TiAlN/Si3N4-Cu nanocomposite coating containing 3.39 at.% Si content. In addition, the TiAlN/Si3N4-Cu coating containing 3.39 at.% Si content also has good adhesion property and superior wear resistance, and the wear mechanism is mainly adhesion wear.

  15. Ternary-fragmentation-driving potential energies of 252Cf

    Science.gov (United States)

    Karthikraj, C.; Ren, Zhongzhou

    2017-12-01

    Within the framework of a simple macroscopic model, the ternary-fragmentation-driving potential energies of 252Cf are studied. In this work, all possible ternary-fragment combinations of 252Cf are generated by the use of atomic mass evaluation-2016 (AME2016) data and these combinations are minimized by using a two-dimensional minimization approach. This minimization process can be done in two ways: (i) with respect to proton numbers (Z1, Z2, Z3) and (ii) with respect to neutron numbers (N1, N2, N3) of the ternary fragments. In this paper, the driving potential energies for the ternary breakup of 252Cf are presented for both the spherical and deformed as well as the proton-minimized and neutron-minimized ternary fragments. From the proton-minimized spherical ternary fragments, we have obtained different possible ternary configurations with a minimum driving potential, in particular, the experimental expectation of Sn + Ni + Ca ternary fragmentation. However, the neutron-minimized ternary fragments exhibit a driving potential minimum in the true-ternary-fission (TTF) region as well. Further, the Q -value energy systematics of the neutron-minimized ternary fragments show larger values for the TTF fragments. From this, we have concluded that the TTF region fragments with the least driving potential and high Q values have a strong possibility in the ternary fragmentation of 252Cf. Further, the role of ground-state deformations (β2, β3, β4, and β6) in the ternary breakup of 252Cf is also studied. The deformed ternary fragmentation, which involves Z3=12 -19 fragments, possesses the driving potential minimum due to the larger oblate deformations. We also found that the ground-state deformations, particularly β2, strongly influence the driving potential energies and play a major role in determining the most probable fragment combinations in the ternary breakup of 252Cf.

  16. Using a Ternary Diagram to Display a System's Evolving Energy Distribution

    Science.gov (United States)

    Brazzle, Bob; Tapp, Anne

    2016-01-01

    A ternary diagram is a graphical representation used for systems with three components. They are familiar to mineralogists (who typically use them to categorize varieties of solid solution minerals such as feldspar) but are not yet widely used in the physics community. Last year the lead author began using ternary diagrams in his introductory…

  17. Piezoelectric characterization of Sc0.26Al0.74N layers on Si (001) substrates

    Science.gov (United States)

    Sinusía Lozano, M.; Pérez-Campos, A.; Reusch, M.; Kirste, L.; Fuchs, Th; Žukauskaitė, A.; Chen, Z.; Iriarte, G. F.

    2018-03-01

    Scandium aluminum nitride (ScAlN) films have been synthesized by pulsed-DC reactive magnetron sputtering. The degree of c-axis orientation as well as piezoelectric characteristics of the Sc0.26Al0.74N thin films grown on Si (001) at various discharge powers and processing pressures values have been investigated. According to x-ray diffraction (XRD) measurements, the texture of the as-grown Sc0.26Al0.74N thin films becomes more prominent in the [0001]-direction at the highest target power (700 W) and at the lowest processing pressure (4 mTorr). The piezoelectric response, as determined by measuring the d33 piezoelectric constant, shows a maximum value of -12 pC/N also at 4 mTorr and 700 W, confirming a direct correlation between the d33 piezoelectric constant and the degree of orientation in the [0001]-direction. The atomic concentration of Sc and Al in the synthesized ScAlN thin film, determined by secondary ion mass spectroscopy (SIMS), reveals a Sc concentration lower than in the ScAl alloy target. The piezoresponse force microscopy (PFM) shows homogeneous polarity distribution with no inversion domains. The piezoelectric layers have been used to fabricate and measure surface acoustic wave (SAW) resonators on a Sc0.26Al0.74N/Si (001) bilayer system with resonance frequency of 1.4 GHz and coupling coefficient of 0.567. Such characteristic in the frequency response reveals the potential of these materials for advanced SAW devices in applications such as next generation (5 G) wireless communication systems.

  18. New ternary hydride formation in U-Ti-H system

    International Nuclear Information System (INIS)

    Yamamoto, Takuya; Kayano, Hideo; Yamawaki, Michio.

    1991-01-01

    Hydrogen absorption properties of two titanium-rich uranium alloys, UTi 2 and UTi 4 , were studied in order to prepare and identify the recently found ternary hydride. They slowly reacted with hydrogen of the initial pressure of 10 5 Pa at 873K to form the ternary hydride. The hydrogenated specimen mainly consisted of the pursued ternary hydride but contained also U(or UO 2 ), TiH x , and some transient phases. X-ray powder diffraction and Electron Probe Micro Analysis proved that it was the UTi 2 H x with the expected MgCu 2 structure, though all the X-ray peaks were broad probably because of inhomogeneity. This compound had extremely high resistance to powdering on its formation, which showed high potential utilities for a non-powdering tritium storage system or for other purposes. (author)

  19. Thermodynamic modeling of Al–U–X (X = Si,Zr)

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, Daniel; Shneck, Roni Z. [Department of Materials Engineering, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105 (Israel); Rafailov, Gennady [Department of Materials Engineering, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105 (Israel); NRCN, P.O. Box 9001, Beer-Sheva 84190 (Israel); Dahan, Isaac [NRCN, P.O. Box 9001, Beer-Sheva 84190 (Israel); Meshi, Louisa [Department of Materials Engineering, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105 (Israel); Brosh, Eli, E-mail: ebrosh1@gmail.com [NRCN, P.O. Box 9001, Beer-Sheva 84190 (Israel)

    2015-09-15

    Highlights: • Thermodynamic models of the U–Al–Si and U–Al–Zr systems were constructed. • The extrapolation methods of the ternary liquid phase were explored. • The order–disorder transition of the U(Al,Si){sub 3} phase was modeled. • New experiments fix the composition of U(Al,Si){sub 3} in equilibrium with Al and Si. • Effects of Si on microstructures of solidified U–Al alloys are clarified. - Abstract: Thermodynamic models are constructed for the U–Al–Si and U–A–Zr ternary alloy systems using the CALPHAD (CALculation of PHAse Diagrams) method. For the U–Al–Zr system the modeling covers only the aluminum-rich corner (from 100 at% to 67 at% Al) and is based only on literature data. For the U–Al–Si system, the whole range of compositions is covered and new key experiments were done in the uranium-poor region of the U–Al–Si system. These experiments have shown that under conditions of equilibrium with Al and Si, the Si-content of the U(Al,Si){sub 3} is significantly higher than reported by earlier works. Different extrapolation methods were tried for the Gibbs energy of the liquid phase. However, it was found that for the U–Al–Si and U–Al–Zr systems, symmetric Muggianu method and the asymmetric method by Hillert give similar predictions. The constructed thermodynamic database was investigated by calculating isothermal sections, vertical sections and the liquidus projection. The calculated diagrams are in reasonable agreement with experimental data. Finally, solidification simulation (Scheil simulation) was done in order to assess the phases obtained in solidification as a function of the silicon addition to U–Al alloys.

  20. Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

    International Nuclear Information System (INIS)

    Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.

    2004-01-01

    Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix

  1. NiS and MoS2 nanosheet co-modified graphitic C3N4 ternary heterostructure for high efficient visible light photodegradation of antibiotic.

    Science.gov (United States)

    Lu, Xuejun; Wang, Yu; Zhang, Xinyi; Xu, Guangqing; Wang, Dongmei; Lv, Jun; Zheng, Zhixiang; Wu, Yucheng

    2018-01-05

    The development of efficient solar driven catalytic system for the degradation of antibiotics has become increasingly important in environmental protection and remediation. Non-noble-metal NiS and MoS 2 nanosheet co-modified graphitic C 3 N 4 ternary heterostructure has been synthesized via a facile combination of hydrothermal and ultrasound method, and the ternary heterostructure has been utilized for photocatalytic degradation of antibiotic agents. The antibiotics of ciprofloxacin (CIP) and tetracycline hydrochloride (TC) were photodegraded by the hybrid under the visible light. The optimal photodegradation rate of the ternary heterostructure reaches about 96% after 2h irradiation, which is 2.1 times higher than that of pure g-C 3 N 4 for TC degradation. The photocatalytic degradation rates of the ternary heterostructure for both CIP and TC obey the pseudo-first-order kinetic model. The enhanced visible light adsorption and charge separation efficiency contribute to the photocatalytic performance of the ternary heterostructure. This work provides new insights and pathways by which efficient degradation of antibiotics can be achieved and will stimulate further studies in this important field. Copyright © 2017 Elsevier B.V. All rights reserved.

  2. Corrosive sliding wear behavior of laser clad Mo2Ni3Si/NiSi intermetallic coating

    International Nuclear Information System (INIS)

    Lu, X.D.; Wang, H.M.

    2005-01-01

    Many ternary metal silicides such as W 2 Ni 3 Si, Ti 2 Ni 3 Si and Mo 2 Ni 3 Si with the topologically closed-packed (TCP) hP12 MgZn 2 type Laves phase crystal structure are expected to have outstanding wear and corrosion resistance due to their inherent high hardness and sluggish temperature dependence and strong atomic bonds. In this paper, Mo 2 Ni 3 Si/NiSi intermetallic coating was fabricated on substrate of an austenitic stainless steel AISI321 by laser cladding using Ni-Mo-Si elemental alloy powders. Microstructure of the coating was characterized by optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDS). Wear resistance of the coating is evaluated under corrosive sliding wear test condition. Influence of corrosion solutions on the wear resistance of the coating was studied and the wear mechanism was discussed based on observations of worn surface morphology. Results showed that the laser clad Mo 2 Ni 3 Si/NiSi composite coating have a fine microstructure of Mo 2 Ni 3 Si primary dendrites and the interdendritic Mo 2 Ni 3 Si/NiSi eutectics. The coating has excellent corrosive wear resistance compared with austenitic stainless steel AISI321 under acid, alkaline and saline corrosive environments

  3. Experimental and thermodynamic investigation of Al-Cu-Nd ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Bai, W.M. [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); Jiang, Y. [Hunan Sushi Guangbo Testing Techniques Co. LTD, Changsha (China); Guo, Z.Y.; Zeng, L.J.; Tan, M.Y. [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); Meggs, C. [School of Metallurgy and Materials, The University of Birmingham, Edgbaston, Birmingham, B15 2TT (United Kingdom); Zhang, L.G., E-mail: ligangzhang@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); Liu, L.B., E-mail: pdc@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); Jin, Z.P. [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China)

    2017-07-01

    The phase relationships in the Al–Cu-Nd ternary system at 673 K have been investigated by X-ray powder diffraction (XRD) and scanning electron microscope (SEM) with energy disperse X-ray spectroscopy (EDS) in backscattered electron imaging (BSE) modes. The existence of six ternary Stoichiometric compounds, namely τ{sub 1}-Al{sub 8}Cu{sub 4}Nd, τ{sub 2}-Al{sub 9}Cu{sub 8}Nd{sub 2}, τ{sub 3}-Al{sub 6}Cu{sub 7}Nd, τ{sub 4}-Al{sub 2.4}Cu{sub 8.6}Nd, τ{sub 5}-Al{sub 3}CuNd, τ{sub 6}-AlCuNd, have been confirmed. A complete thermodynamic description of the Al–Cu-Nd ternary system coupled with the CALPHAD method is obtained based on experimental results and first-principles calculations. The calculated phase equilibria were in agreement with the available experimental data. - Highlights: • Phase relationships in the Al-Cu-Nd system has been systematically investigated. • 9 three-phase regions and 4 two-phase regions are confirmed. • A complete thermodynamic description of the Al-Cu-Nd system is obtained. • Results of first-principle calculation consist with thermodynamic calculation.

  4. An unprecedented extended architecture constructed from a 2-D interpenetrating cationic coordination framework templated by SiW12O404- anion

    International Nuclear Information System (INIS)

    Wang Xiuli; Lin Hongyan; Bi Yanfeng; Chen Baokuan; Liu Guocheng

    2008-01-01

    A novel inorganic-organic hybrid compound based on polyoxometalates (POMs) and organic ligand formulated as [Cu 2 (bpp) 4 (H 2 O) 2 ](SiW 12 O 40 )∼6H 2 O (1) [bpp=1,3-bis(4-pyridyl)propane], was hydrothermally synthesized and structurally characterized by elemental analysis, single-crystal X-ray diffraction analysis, IR, TG, and cyclic voltammetry. Crystal data for 1: Orthorhombic, Pbcn, a=23.0085(19) A, b=14.6379(12) A, c=23.6226(19) A, V=7956.0(11) A 3 , Z=4, Dc=3.315 g cm -3 , and R(final)=0.0826. X-ray diffraction study reveals that compound 1 was the first interpenetrating network of 2-D metal-organic cationic coordination framework [Cu 2 (bpp) 4 (H 2 O) 2 ] n 4n+ , in which Keggin-type anions SiW 12 O 40 4- has been used as a non-coordinating anionic template. The electrochemical property of 1-bulk modified carbon paste electrode (1-CPE) has been studied, and the results indicate that 1-CPE has good electrocatalytic activities toward the reduction of nitrite in 1 M H 2 SO 4 aqueous solution. - Graphical abstract: Compound [Cu 2 (bpp) 4 (H 2 O) 2 ](SiW 12 O 40 )∼6H 2 O (1) represents the first 2-D interpenetrating cationic metal-organic frameworks (MOFs) templated by Keggin-type anions. These MOF layers are stacked together along the crystallographic c axis exactly to construct large cubic-like channels (with dimensions of 12.3x13.6 A) occupied by SiW 12 O 40 4- clusters

  5. An improved ternary vector system for Agrobacterium-mediated rapid maize transformation.

    Science.gov (United States)

    Anand, Ajith; Bass, Steven H; Wu, Emily; Wang, Ning; McBride, Kevin E; Annaluru, Narayana; Miller, Michael; Hua, Mo; Jones, Todd J

    2018-05-01

    A simple and versatile ternary vector system that utilizes improved accessory plasmids for rapid maize transformation is described. This system facilitates high-throughput vector construction and plant transformation. The super binary plasmid pSB1 is a mainstay of maize transformation. However, the large size of the base vector makes it challenging to clone, the process of co-integration is cumbersome and inefficient, and some Agrobacterium strains are known to give rise to spontaneous mutants resistant to tetracycline. These limitations present substantial barriers to high throughput vector construction. Here we describe a smaller, simpler and versatile ternary vector system for maize transformation that utilizes improved accessory plasmids requiring no co-integration step. In addition, the newly described accessory plasmids have restored virulence genes found to be defective in pSB1, as well as added virulence genes. Testing of different configurations of the accessory plasmids in combination with T-DNA binary vector as ternary vectors nearly doubles both the raw transformation frequency and the number of transformation events of usable quality in difficult-to-transform maize inbreds. The newly described ternary vectors enabled the development of a rapid maize transformation method for elite inbreds. This vector system facilitated screening different origins of replication on the accessory plasmid and T-DNA vector, and four combinations were identified that have high (86-103%) raw transformation frequency in an elite maize inbred.

  6. Microstructural characterization of an opal glass in the Na/sub 2/O-CdO-SiO/sub 2/ system

    Energy Technology Data Exchange (ETDEWEB)

    Rivera, E; Celaya, L E; Rincon, J M

    1987-05-01

    The microstructure of an opal glass formulated in the ternary system Na/sub 2/O-CdO-SiO/sub 2/ has been determined by scanning electron microscopy (SEM) and energy dispersive X-ray microanalysis (EDX). This type of glass shows tridymite devitrification with a high level of liquid-liquid immiscibility.

  7. Microprobe measurements to determine phase boundaries and diffusion paths in ternary phase diagrams taking a Cu-Ni-Al system as an example

    International Nuclear Information System (INIS)

    Rudolph, G.

    1983-01-01

    With the aid of quantitative microprobe tests, diffusion phenomena and phase formation in the ternary CuNiAl system at 600 - 900 0 C were investigated taking as an example the diffusion couple CuNi5Al5-nickel. The diffusion paths in the ternary system are dependent on temperature and assume an S-form in the copper corner of the phase diagram. In the copper corner, the curves swing away from the more rapid component aluminium towards the copper. Due to this non-linear course of the curves, the intermetallic theta-phase of the type (Ni,Cu) 3 Al can be observed as a layer at all temperatures in the boundary zone. At 800 0 C and to a lesser extend at 900 0 C the solubility of α-CuNi40 for aluminium, at around 5 mass-%, is higher than the value given by W.O. Alexander (1938). As far as it is possible with the diffusion couple under analysis, the microprobe measurements taken otherwise conform at 700 and 600 0 C the position of the phase boundary α-(Cu,Ni)/(α+theta)-miscibility gap indicated in W.O. Alexander (1938). (Author)

  8. The ternary system K2SO4MgSO4CaSO4

    Science.gov (United States)

    Rowe, J.J.; Morey, G.W.; Silber, C.C.

    1967-01-01

    Melting and subsolidus relations in the system K2SO4MgSO4CaSO4 were studied using heating-cooling curves, differential thermal analysis, optics, X-ray diffraction at room and high temperatures and by quenching techniques. Previous investigators were unable to study the binary MgSO4CaSO4 system and the adjacent area in the ternary system because of the decomposition of MgSO4 and CaSO4 at high temperatures. This problem was partly overcome by a novel sealed-tube quenching method, by hydrothermal synthesis, and by long-time heating in the solidus. As a result of this study, we found: (1) a new compound, CaSO4??3MgSO4 (m.p. 1201??C) with a field extending into the ternary system; (2) a high temperature form of MgSO4 with a sluggishly reversible inversion. An X-ray diffraction pattern for this polymorphic form is given; (3) the inversion of ??-CaSO4 (anhydrite) to ??-CaSO4 at 1195??C, in agreement with grahmann; (1) (4) the melting point of MgSO4 is 1136??C and that of CaSO4 is 1462??C (using sealed tube methods to prevent decomposition of the sulphates); (5) calcium langbeinite (K2SO4??2CaSO4) is the only compound in the K2SO4CaSO4 binary system. This resolved discrepancies in the results of previous investigators; (6) a continuous solid solution series between congruently melting K2SOP4??2MgSO4 (langbeinite) and incongruently melting K2SO4??2CaSO4 (calcium langbeinite); (7) the liquidus in the ternary system consists of primary phase fields of K2SO4, MgSO4, CaSO4, langbeinite-calcium langbeinite solid solution, and CaSO4??3MgSO4. The CaSO4 field extends over a large portion of the system. Previously reported fields for the compounds (K2SO4??MgSO4??nCaSO4), K2SO4??3CaSO4 and K2SO4??CaSO4 were not found; (8) a minimum in the ternary system at: 740??C, 25% MgSO4, 6% CaSO4, 69% K2SO4; and ternary eutectics at 882??C, 49% MgSO4, 19% CaSO4, 32% K2SO4; and 880??, 67??5% MgSO4, 5% CaSO4, 27??5% K2SO4. ?? 1967.

  9. Experimental investigation of phase equilibria in the Zr-Cu-Ni ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Mujin; Wang, Cuiping; Yang, Shuiyuan; Shi, Zhan; Han, Jiajia; Liu, Xingjun [Xiamen Univ. (China). College of Materials and Fujian Provincial Key Lab. of Materials Genome

    2017-08-15

    The phase equilibria in the Zr-Cu-Ni ternary system are investigated combined with X-ray diffraction, electron probe micro-analysis and differential scanning calorimetry. Two isothermal sections of the Zr-Cu-Ni ternary system at 1 000 C and 1 100 C are experimentally established. Most of the binary intermetallic compounds, e.g. Zr{sub 7}Ni{sub 10}, ZrNi, ZrNi{sub 5}, Zr{sub 14}Cu{sub 51}, and Zr{sub 2}Cu{sub 9}, show a remarkable ternary solubility. A new ternary compound named τ{sub 3} (Zr{sub 31.1-30.7} . Cu{sub 28.5-40.3}Ni{sub 40.4-29.0}) is detected at 1 000 C and dissolved at 1 020 C because the nearby large liquid phase field further expands. The newly determined phase equilibria will provide important information for both thermodynamic assessment and alloy design of Zr-based metallic glass.

  10. Structure of multilayered Cr(Al)N/SiO{sub x} nanocomposite coatings fabricated by differential pumping co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kawasaki, Masahiro [JEOL USA Inc., 11 Dearborn Road, Peabody, Massachusetts 01960 (United States); Nose, Masateru [Faculty of Art and Design, University of Toyama, 180 Futagami-machi, Takaoka 933-8588 (Japan); Onishi, Ichiro [JEOL Ltd. 3-1-2 Musashino, Akishima, Tokyo 196-8558 (Japan); Shiojiri, Makoto [Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

    2013-11-11

    A Cr(Al)N/38 vol. % SiO{sub x} hard coating was prepared on a (001) Si substrate at 250 °C in a differential pumping co-sputtering system, which has two chambers for radio frequency (RF) sputtering and a substrate holder rotating on the chambers. The composite coating was grown by alternate sputter-depositions from CrAl and SiO{sub 2} targets with flows of N{sub 2}+Ar and Ar at RF powers of 200 and 75 W, respectively, on transition layers grown on the substrate. Analytical electron microscopy reveled that the Cr(Al)N/SiO{sub x} coating had a multilayered structure of Cr(Al)N crystal layers ∼1.6 nm thick and two-dimensionally dispersed amorphous silicon oxide (a-SiO{sub x}) particles with sizes of ∼1 nm or less. The a-SiO{sub x} particles were enclosed with the Cr(Al)N layers. The coating had a low indentation hardness of ∼25 GPa at room temperature, due to a high oxide fraction of 38 vol. % and a low substrate rotational speed of 1 rpm. Faster rotation and lower oxide fraction would make a-SiO{sub x} particles smaller, resulting in the formation of Cr(Al)N crystal including the very fine a-SiO{sub x} particles with small number density. They would work as obstacles for the lattice deformation of the Cr(Al)N crystals. We have fabricated a superhard coating of Cr(Al)N/17 vol. % SiO{sub x} with a hardness of 46 GPa prepared at 12 rpm.

  11. Properties of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yi; Rehman, Habib ur; Springborg, Michael [Physical and Theoretical Chemistry, University of Saarland, 66123 Saarbrücken (Germany)

    2015-01-22

    The structures of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters with up to 44 atoms have been determined theoretically using an unbiased structure-optimization method in combination with a parametrized, density-functional description of the total energy for a given structure. By analyzing the total energy in detail, particularly stable clusters are identified. Moreover, general trends in the structures are identified with the help of specifically constructed descriptors.

  12. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan [National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2014-09-28

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  13. Ternary nitrogen-doped graphene/nickel ferrite/polyaniline nanocomposites for high-performance supercapacitors

    Science.gov (United States)

    Wang, Wenjuan; Hao, Qingli; Lei, Wu; Xia, Xifeng; Wang, Xin

    2014-12-01

    The electrochemical property of graphene can be significantly enhanced due to the incorporating of heteroatoms into graphene. In this article, the ternary nitrogen-doped graphene/nickel ferrite/polyaniline (NGNP) nanocomposite is synthesized by a facile two-step approach and its electrochemical properties as electrodes for supercapacitors are studied by various electrochemical measurements. The specific capacitance of NGNP is 645.0 F g-1 at 1 mV s-1 and 667.0 F g-1 at 0.1 A g-1 in a three- and two-electrode system, respectively, much higher than other binary electrodes. In a two-electrode symmetric system, the energy density of the NGNP electrode is 92.7 W h kg-1 at a power density of 110.8 W kg-1, moreover, that of the supercapacitor based on NGNP can also reach 23.2 W h kg-1 at a power density of 27.7 W kg-1. In addition, the capacitance loses only 5% after repeating test for 5000 cycles, and about 10% after 10,000 cycles at a high current density 5 A g-1. The results demonstrate the novel ternary NGNP electrode produced by the current economical method will gain promising applications in supercapacitors and other devices by virtue of its outstanding characteristics (high specific capacitance, high power and energy density, excellent cycle life).

  14. Thermodynamic description of the Al-Cu-Mg-Mn-Si quinary system and its application to solidification simulation

    International Nuclear Information System (INIS)

    Chang, Keke; Liu, Shuhong; Zhao, Dongdong; Du, Yong; Zhou, Liangcai; Chen, Li

    2011-01-01

    By means of the first-principles calculations, the enthalpy of formation for the quaternary phase in the Al-Cu-Mg-Si system was computed. A set of self-consistent thermodynamic parameters for the Al-Cu-Mg-Si and Al-Cu-Mn-Si systems was then obtained using CALPHAD approach taking into account the reliable experimental data and the first-principles calculations. The thermodynamic database for the Al-Cu-Mg-Mn-Si system was developed based on the constituent binary, ternary, and quaternary systems. Comprehensive comparisons between the calculated and measured phase diagrams and invariant reactions showed that the experimental information was satisfactorily accounted for by the present thermodynamic description. The obtained database was used to describe the solidification behavior of Al alloys B319.1 (90.2Al-6Si-3.5Cu-0.3Mg, in wt.%) and B319.1 + xMn (x = 0.5-2, in wt.%) under Gulliver-Scheil non-equilibrium condition. The reliability of the present thermodynamic database was also verified by the good agreement between calculation and experiment for Gulliver-Scheil non-equilibrium solidification.

  15. Modification of both d33 and TC in a potassium-sodium niobate ternary system.

    Science.gov (United States)

    Wu, Bo; Wu, Jiagang; Xiao, Dingquan; Zhu, Jianguo

    2015-12-28

    In this work, we simultaneously achieved a giant d33 and a high TC in a lead-free piezoelectric ternary system of (1-x-y)K0.48Na0.52NbO3-xBiFeO3-yBi0.5Na0.5ZrO3 {(1-x-y)KNN-xBF-yBNZ}. Owing to the rhombohedral-orthorhombic-tetragonal (R-O-T) phase coexistence and the enhanced dielectric and ferroelectric properties, the ceramics with a composition of (x = 0.006, y = 0.04) show a giant d33 of ∼428 pC N(-1) together with a TC of ∼318 °C, thereby proving that the design of ternary systems is an effective way to achieve both high d33 and high TC in KNN-based materials. In addition, a good thermal stability for piezoelectricity was also observed in these ceramics (e.g., d33 > 390 pC N(-1), T ≤ 300 °C). This is the first time such a good comprehensive performance in potassium-sodium niobate materials has been obtained. As a result, we believe that this type of material system with both giant d33 and high TC is a promising candidate for high-temperature piezoelectric devices.

  16. Determination and thermodynamic modeling of solid–liquid phase equilibrium for 3,5-dichloroaniline in pure solvents and ternary 3,5-dichloroaniline + 1,3,5-trichlorobenzene + toluene system

    International Nuclear Information System (INIS)

    Li, Rongrong; Du, Cunbin; Meng, Long; Han, Shuo; Wang, Jian; Zhao, Hongkun

    2016-01-01

    Highlights: • Solubility of 3,5-dichloroaniline in seven organic solvents were determined. • Solid–liquid phase equilibrium for ternary system was measured. • The binary and ternary phase diagrams were constructed. • The phase diagrams were correlated with thermodynamic models. - Abstract: The solid–liquid phase equilibrium data for 3,5-dichloroaniline in n-propanol, isopropanol, n-butanol, isobutanol, toluene, ethyl acetate and acetone at (283.15 to 308.15) K were determined experimentally by gas chromatography under 101.3 kPa. The solubility of 3,5-dichloroaniline in these solvents decreased according to the following order: ethyl acetate > (acetone, toluene) for the solvents of ethyl acetate, acetone, and toluene; and for the other solvents, (isopropanol, n-butanol) > n-propanol > isobutanol. According to the solubility of 3,5-dichloroaniline in pure solvents, the solid–liquid phase equilibrium for the ternary mixture of 3,5-dichloroaniline + 1,3,5-trichlorobenzene + toluene were measured by using an isothermal saturation method at three temperatures of 283.15, 293.15, and 303.15 K under 101.3 kPa, and the corresponding isothermal phase diagrams were constructed. Two pure solids were formed in the ternary system at a fixed temperature, which were pure 3,5-dichloroaniline and pure 1,3,5-trichlorobenzene and were identified by Schreinemakers’ method of wet residue. The temperature dependence of 3,5-dichloroaniline solubility in pure solvents was correlated by the modified Apelblat equation, λh equation, Wilson model and NRTL model; and the ternary solid–liquid phase equilibrium of 3,5-dichloroaniline + 1,3,5-trichlorobenzene + toluene were described by the Wilson model and NRTL model. Results showed that calculated solubility values with these models agreed well with the experimental ones for the studied binary and ternary systems. The solid–liquid equilibrium and the thermodynamic models for the binary and ternary systems can offer the

  17. Synthesis and characterization of Ti-Si-C-N nanocomposite coatings prepared by a filtered vacuum arc method

    Energy Technology Data Exchange (ETDEWEB)

    Thangavel, Elangovan, E-mail: t.elangophy@gmail.com [Advanced Thin Film Research Group, Materials Processing Division, Korea Institute of Materials Science, Changwon 641-831 (Korea, Republic of); Center for Nano-Wear, Yonsei University, Seoul 120-749 (Korea, Republic of); Lee, Seunghun; Nam, Kee-Seok; Kim, Jong-Kuk [Advanced Thin Film Research Group, Materials Processing Division, Korea Institute of Materials Science, Changwon 641-831 (Korea, Republic of); Kim, Do-Geun, E-mail: dogeunkim@kims.re.kr [Advanced Thin Film Research Group, Materials Processing Division, Korea Institute of Materials Science, Changwon 641-831 (Korea, Republic of)

    2013-01-15

    Highlights: Black-Right-Pointing-Pointer Preparation method was used as filtered vacuum arc (FVA) deposition. Black-Right-Pointing-Pointer Ternary coating obtained by using single carbon source with TMS gas. Black-Right-Pointing-Pointer Detailed discussion of chemical nature for these coating by using XPS. - Abstract: Ti-Si-C-N nanocomposite coatings were synthesized by a filtered vacuum arc (FVA) technique. A metal organic precursor, tetramethylsilane (TMS), was used as a source for silicon and carbon to deposit the Ti-Si-C-N nanocomposite coating with a Ti cathode source. The chemical and microstructural properties of the as-deposited coatings were systematically investigated using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and transmission electron microscopy (TEM). Nanoindentation and scratch tests were carried out to evaluate the mechanical and adhesion properties of the coatings. From the XPS analysis, it was found that the Si content in the coating increased from 2 to 16 at.% as the TMS flow rate was increased from 5 to 20 sccm. The TEM analysis clearly demonstrated that the coatings were composed of crystalline TiCN along with amorphous Si{sub 3}N{sub 4} as a secondary phase. From the XRD results, it was found that the crystallite size of TiCN increased with increasing Si content. The microstructure and mechanical properties of the TiSiCN coatings prepared by this method exhibited strong dependencies on the silicon content. A maximum hardness of 49 GPa and a coefficient of friction of 0.17 were obtained for the film with a silicon content of 3 at.%.

  18. ILD SiW ECAL and sDHCAL dimension-performance optimisation

    CERN Document Server

    Tran, T.H

    2015-01-01

    The ILD, International Large Detector, is one of the detector concepts for a future linear collider. Its performance is investigated using Monte-Carlo full simulation and PandoraPFA. Among several options, a combination of the silicon-tungsten electromagnetic calorimeter (SiW ECAL) and the semi-digital hadronic calorimeter (sDHCAL) presenting the highest granularity calorimeters, is here investigated. It is shown that by reducing the radius and length of the entire detector by a factor of ∼ 1.3 with respect to the baseline dimensions, the jet energy resolution is degraded by 8 to 19% in the range of 45 and 250 GeV. The price of ILD which scales roughly quadratically with the ILD dimensions may be reduced by a factor of nearly two. A similar study made with the SiW ECAL and the analog hadronic calorimeter (AHCAL) shows that for an inner radius of ECAL of about 1.4 m, the performance is comparable between sDHCAL and AHCAL.

  19. Phase coexistence and line tension in ternary lipid systems

    NARCIS (Netherlands)

    Idema, T.; Leeuwen, van J.M.J.; Storm, C.

    2009-01-01

    The ternary system consisting of cholesterol, a saturated lipid, and an unsaturated one exhibits a rich phase behavior with multiple phase coexistence regimes. Remarkably, phase separation even occurs when each of the three binary systems consisting of two of these components is a uniform mixture.

  20. Ternary fission

    International Nuclear Information System (INIS)

    Wagemans, C.

    1991-01-01

    Since its discovery in 1946, light (charged) particle accompanied fission (ternary fission) has been extensively studied, for spontaneous as well as for induced fission reactions. The reason for this interest was twofold: the ternary particles being emitted in space and time close to the scission point were expected to supply information on the scission point configuration and the ternary fission process was an important source of helium, tritium, and hydrogen production in nuclear reactors, for which data were requested by the nuclear industry. Significant experimental progress has been realized with the advent of high-resolution detectors, powerful multiparameter data acquisition systems, and intense neutron and photon beams. As far as theory is concerned, the trajectory calculations (in which scission point parameters are deduced from the experimental observations) have been very much improved. An attempt was made to explain ternary particle emission in terms of a Plateau-Rayleigh hydrodynamical instability of a relatively long cylindrical neck or cylindrical nucleus. New results have also been obtained on the so-called open-quotes trueclose quotes ternary fission (fission in three about-equal fragments). The spontaneous emission of charged particles has also clearly been demonstrated in recent years. This chapter discusses the main characteristics of ternary fission, theoretical models, light particle emission probabilities, the dependence of the emission probabilities on experimental variables, light particle energy distributions, light particle angular distributions, correlations between light particle accompanied fission observables, open-quotes trueclose quotes ternary fission, and spontaneous emission of heavy ions. 143 refs., 18 figs., 8 tabs

  1. Study of the R-(Zr,W)-(O,N) (R = Y, Nd, Sm, Gd, Yb) oxynitride system

    Energy Technology Data Exchange (ETDEWEB)

    Tessier, Franck, E-mail: Franck.Tessier@univ-rennes1.fr [UMR CNRS 6226 ' Sciences Chimiques de Rennes' , equipe ' Verres et Ceramiques' , Universite de Rennes 1, 35042 Rennes cedex (France); Maillard, Pascal [UMR CNRS 6226 ' Sciences Chimiques de Rennes' , equipe ' Verres et Ceramiques' , Universite de Rennes 1, 35042 Rennes cedex (France); Orhan, Emmanuelle [Laboratoire Science des Procedes Ceramiques et Traitements de Surface, UMR CNRS 6638, Universite de Limoges, 123 Avenue Albert Thomas, 87060 Limoges cedex (France); Chevire, Francois [UMR CNRS 6226 ' Sciences Chimiques de Rennes' , equipe ' Verres et Ceramiques' , Universite de Rennes 1, 35042 Rennes cedex (France)

    2010-02-15

    The replacement of tantalum by the couple Zr/W within the RTa-O-N systems (R = Y, Nd, Sm, Gd, Yb), enables the preparation of novel oxide and oxynitride phases in the R-Zr-W-O-N system. R{sub 2}Zr{sub 2-x}W{sub x}O{sub 7+x} oxides exhibit the fluorite-type (x < 0.9) and scheelite (x {approx} 1) structures. Corresponding oxynitride compositions are of the fluorite-type and show different colors, for example in the case of ytterbium: pale yellow (x = 0.2 or 0.25), green (x = 0.5-0.8) and brown for the tungsten-rich samples (x = 0.9, 1). Photocatalytic activity measurements have been performed to investigate the overall water splitting behavior of these colored phases.

  2. Monolithic Composite “Pressure + Acceleration + Temperature + Infrared” Sensor Using a Versatile Single-Sided “SiN/Poly-Si/Al” Process-Module

    Directory of Open Access Journals (Sweden)

    Xinxin Li

    2013-01-01

    Full Text Available We report a newly developed design/fabrication module with low-cost single-sided “low-stress-silicon-nitride (LS-SiN/polysilicon (poly-Si/Al” process for monolithic integration of composite sensors for sensing-network-node applications. A front-side surface-/bulk-micromachining process on a conventional Si-substrate is developed, featuring a multifunctional SiN/poly-Si/Al layer design for diverse sensing functions. The first “pressure + acceleration + temperature + infrared” (PATIR composite sensor with the chip size of 2.5 mm × 2.5 mm is demonstrated. Systematic theoretical design and analysis methods are developed. The diverse sensing components include a piezoresistive absolute-pressure sensor (up to 700 kPa, with a sensitivity of 49 mV/MPa under 3.3 V supplied voltage, a piezoresistive accelerometer (±10 g, with a sensitivity of 66 μV/g under 3.3 V and a −3 dB bandwidth of 780 Hz, a thermoelectric infrared detector (with a responsivity of 45 V/W and detectivity of 3.6 × 107 cm·Hz1/2/W and a thermistor (−25–120 °C. This design/fabrication module concept enables a low-cost monolithically-integrated “multifunctional-library” technique. It can be utilized as a customizable tool for versatile application-specific requirements, which is very useful for small-size, low-cost, large-scale sensing-network node developments.

  3. Phase equilibria of the Al-Pr-Zr ternary system at 773 K

    International Nuclear Information System (INIS)

    She, Jia; Zhan, Yongzhong; Li, Chunliu; Du, Yong; Xu, Honghui; He, Yuehui

    2010-01-01

    The phase equilibria of the Al-Pr-Zr ternary system at 773 K have been investigated mainly by means of X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and differential thermal analysis (DTA). The 14 binary compounds, i.e. AlZr 3 , AlZr 2 , Al 2 Zr 3 , Al 3 Zr 4 , AlZr, Al 3 Zr 2 , Al 2 Zr, Al 3 Zr, α-Al 11 Pr 3 , Al 3 Pr, Al 2 Pr, β-AlPr, AlPr 2 and β-AlPr 3 were confirmed. No binary compound was found in the Pr-Zr binary system. The result shows that the isothermal section of the Al-Pr-Zr ternary system at 773 K consists of 17 single-phase regions, 31 two-phase regions and 15 three-phase regions. All the intermediate compounds phases in this system have not a remarkable solid solution at 773 K. No ternary compound is found in this work.

  4. First principles study of structural stability and site preference in Co3 (W,X

    Directory of Open Access Journals (Sweden)

    Joshi Sri Raghunath

    2014-01-01

    Full Text Available Since the discovery [1] of γ′ precipitate (L12 – Co3(Al, W in the Co-Al-W ternary system, there has been an increased interest in Co-based superalloys. Since these alloys have two phase microstructures (γ + γ′ similar to Ni-based superalloys [2], they are viable candidates in high temperature applications, particularly in land-based turbines. The role of alloying on stability of the γ′ phase has been an active area of research. In this study, electronic structure calculations were done to probe the effect of alloying in Co3W with L12 structure. Compositions of type Co3(W,X, (where X/Y = Mn, Fe, Ni, Pt, Cr , Al, Si, V, W, Ta, Ti, Nb, Hf, Zr and Mo were studied. Effect of alloying on equilibrium lattice parameters and ground state energies was used to calculate Vegard's coefficients and site preference related data. The effect of alloying on the stability of the L12 structure vis a vis other geometrically close packed ordered structures was also studied for a range of Co3X compounds. Results suggest that the penchant of element for the W sublattice can be predicted by comparing heats of formation of Co3X in different structures.

  5. Protein-mediated efficient synergistic "antenna effect" in a ternary system in D₂O medium.

    Science.gov (United States)

    Ghorai, Shyamal Kr; Samanta, Swarna Kamal; Mukherjee, Manini; Ghosh, Sanjib

    2012-08-16

    A ternary system consisting of a protein, catechin (either + or - epimer), and Tb(III) in suitable aqueous buffer medium at physiological pH (= 6.8) has been shown to exhibit highly efficient "antenna effect". Steady state and time-resolved emission studies of each component in the binary complexes (protein with Tb(III) and (+)- or (-)-catechin with Tb(III)) and the ternary systems along with the molecular docking studies reveal that the efficient sensitization could be ascribed to the effective shielding of microenvironment of Tb(III) from O-H oscillator and increased Tb-C (+/-) interaction in the ternary systems in aqueous medium. The ternary system exhibits protein-mediated efficient antenna effect in D(2)O medium due to synergistic ET from both the lowest ππ* triplet state of Trp residue in protein and that of catechin apart from protection of the Tb(III) environment from matrix vibration. The simple system consisting of (+)- or (-)-catechin and Tb(III) in D(2)O buffer at pH 6.8 has been prescribed to be a useful biosensor.

  6. Ag on Si(111) from basic science to application

    Energy Technology Data Exchange (ETDEWEB)

    Belianinov, Aleksey [Iowa State Univ., Ames, IA (United States)

    2012-01-01

    In our work we revisit Ag and Au adsorbates on Si(111)-7x7, as well as experiment with a ternary system of Pentacene, Ag and Si(111). Of particular interest to us is the Si(111)-(√3x√3)R30°}–Ag (Ag-Si-√3 hereafter). In this thesis I systematically explore effects of Ag deposition on the Ag-Si-√3 at different temperatures, film thicknesses and deposition fluxes. The generated insight of the Ag system on the Si(111) is then applied to generate novel methods of nanostructuring and nanowire growth. I then extend our expertise to the Au system on the Ag-Si(111) to gain insight into Au-Si eutectic silicide formation. Finally we explore behavior and growth modes of an organic molecule on the Ag-Si interface.

  7. Ferromagnetic quantum criticality in the uranium-based ternary compounds URhSi, URhAl, and UCoAl

    International Nuclear Information System (INIS)

    Combier, Tristan

    2014-01-01

    In this thesis we explore the ferromagnetic quantum criticality in three uranium-based ternary compounds, by means of thermodynamical and transport measurements on single crystal samples, at low temperature and high pressure. URhSi and URhAl are itinerant ferromagnets, while UCoAl is a paramagnet being close to a ferromagnetic instability. All of them have Ising-type magnetic ordering. In the orthorhombic compound URhSi, we show that the Curie temperature decreases upon applying a magnetic field perpendicular to the easy magnetization axis, and a quantum phase transition is expected around 40 T. In the hexagonal system URhAl, we establish the pressure-temperature phase diagram for the first time, indicating a quantum phase transition around 5 GPa. In the isostructural compound UCoAl, we investigate the metamagnetic transition with measurements of magnetization, Hall effect, resistivity and X-ray magnetic circular dichroism. Some intriguing magnetic relaxation phenomena are observed, with step-like features. Hall effect and resistivity have been measured at dilution temperatures, under hydrostatic pressure up to 2.2 GPa and magnetic field up to 16 T. The metamagnetic transition terminates under pressure and magnetic field at a quantum critical endpoint. In this region, a strong effective mass enhancement occurs, and an intriguing difference between up and down field sweeps appears in transverse resistivity. This may be the signature of a new phase, supposedly linked to the relaxation phenomena observed in magnetic measurements, arising from frustration on the quasi-Kagome lattice of uranium atoms in this crystal structure. (author) [fr

  8. Mid-infrared optical properties of chalcogenide glasses within tin-antimony-selenium ternary system.

    Science.gov (United States)

    Lin, Ruiqiang; Chen, Feifei; Zhang, Xiaoyu; Huang, Yicong; Song, Baoan; Dai, Shixun; Zhang, Xianghua; Ji, Wei

    2017-10-16

    In this work, we investigated the mid-infrared (MIR) optical properties of selenide (Se-based) chalcogenide glasses (ChGs) within an As- and Ge-free system, namely the environment-friendly and low-cost tin-antimony-selenium (Sn-Sb-Se, SSS) ternary system, which has not been systematically studied to the best of our knowledge. As compared to ChGs within those conventional Se-based systems, SSS ChGs were found to exhibit extended infrared transmittance range as well as larger linear refractive index (n 0 ). Femtosecond Z-scan measurements show the presence of evident three-photon absorption from Urbach absorption of the SSS ChGs at MIR wavelength, which resonantly enhanced the nonlinear refractive behavior and resulted in large nonlinear refractive index (n 2 ).

  9. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  10. (Liquid + liquid) equilibria measurements for ternary systems (sulfolane + a carboxylic acid + n-heptane) at T = 303.15 K and at 0.1 MPa

    International Nuclear Information System (INIS)

    Cele, N.P.; Bahadur, I.; Redhi, G.G.; Ebenso, E.E.

    2016-01-01

    Highlights: • The (liquid + liquid) equilibrium for (sulfolane + a carboxylic acid + heptane) was measured. • Selectivity values for solvent separation efficiency were calculated. • Separation of carboxylic acids from heptane is feasible by extraction. • Three parameter equations have been fitted to the binodal curve data. • The NRTL and UNIQUAC models were used to correlate the experimental data. - Abstract: In the present work, new (liquid + liquid) equilibrium (LLE) values are reported for ternary systems {sulfolane(1) + acetic acid, or propanoic acid, or butanoic acid, or 2-methylpropanoic acid, or pentanoic acid, or 3-methylbutanoic acid (2) + n-heptane (3)} at T = 303.15 K and at p = 0.1 MPa. The mutual solubility of carboxylic acid in sulfolane is dependent on the length and structure of the alkyl chain of the carboxylic acid; it progressively increases with an increase in the alkyl chain of the carboxylic acid. The single phase homogenous region increases as the alkyl chain of the carboxylic acid increases. The n-heptane is most soluble in the carboxylic acid mixtures with long alkyl chain, that is, (3-methylbutanoic acid + sulfolane) and (pentanoic acid + sulfolane) systems and least soluble in the carboxylic acid with short alkyl chain (acetic acid + sulfolane) system. Carboxylic acid together with many other oxygenates and hydrocarbons are produced by SASOL Company in South Africa using the Fischer–Tropsch process. The details about this process are given in introduction section. The NRTL and UNIQUAC models were used to correlate the experimental tie-lines and to calculate the phase compositions of the ternary systems. It was found that the NRTL model fits the experimental values significantly better than the UNIQUAC model.

  11. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    International Nuclear Information System (INIS)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong

    2010-01-01

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  12. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    Energy Technology Data Exchange (ETDEWEB)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong, E-mail: puhongbin@xaut.edu.c [Xi' an University of Technology, Xi' an 710048 (China)

    2010-04-15

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 {mu}m and 0.7 {mu}m are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  13. Design of a novel quantum reversible ternary up-counter

    Science.gov (United States)

    Houshmand, Pouran; Haghparast, Majid

    2015-08-01

    Reversible logic has been recently considered as an interesting and important issue in designing combinational and sequential circuits. The combination of reversible logic and multi-valued logic can improve power dissipation, time and space utilization rate of designed circuits. Only few works have been reported about sequential reversible circuits and almost there are no paper exhibited about quantum ternary reversible counter. In this paper, first we designed 2-qutrit and 3-qutrit quantum reversible ternary up-counters using quantum ternary reversible T-flip-flop and quantum reversible ternary gates. Then we proposed generalized quantum reversible ternary n-qutrit up-counter. We also introduced a new approach for designing any type of n-qutrit ternary and reversible counter. According to the results, we can conclude that applying second approach quantum reversible ternary up-counter is better than the others.

  14. Fluorocarbon based atomic layer etching of Si_3N_4 and etching selectivity of SiO_2 over Si_3N_4

    International Nuclear Information System (INIS)

    Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S.; Lai, Chiukin Steven; Hudson, Eric A.

    2016-01-01

    Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO_2 ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar"+ ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO_2 from the surface. In the present article, the authors describe controlled etching of Si_3N_4 and SiO_2 layers of one to several Angstroms using this cyclic ALE approach. Si_3N_4 etching and etching selectivity of SiO_2 over Si_3N_4 were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si_3N_4 were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si_3N_4 has a lower physical sputtering energy threshold than SiO_2, Si_3N_4 physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si_3N_4 to SiO_2 ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO_2 to Si_3N_4 etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si_3N_4 surfaces. This highly selective etching is explained by a lower carbon consumption of Si_3N_4 as compared to SiO_2. The comparison of C_4F_8 and CHF_3 only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions

  15. Investigation based on nano-electromechanical system double Si3N4 resonant beam pressure sensor.

    Science.gov (United States)

    Yang, Chuan; Guo, Can; Yuan, Xiaowei

    2011-12-01

    This paper presents a type of NEMS (Nano-Electromechanical System) double Si3N4 resonant beams pressure sensor. The mathematical models are established in allusion to the Si3N4 resonant beams and pressure sensitive diaphragm. The distribution state of stress has been analyzed theoretically based on the mathematical model of pressure sensitive diaphragm; from the analysis result, the position of the Si3N4 resonant beams above the pressure sensitive diaphragm was optimized and then the dominance observed after the double resonant beams are adopted is illustrated. From the analysis result, the position of the Si3N4 resonant beams above the pressure sensitive diaphragm is optimized, illustrating advantages in the adoption of double resonant beams. The capability of the optimized sensor was generally analyzed using the ANSYS software of finite element analysis. The range of measured pressure is 0-400 Kpa, the coefficient of linearity correlation is 0.99346, and the sensitivity of the sensor is 498.24 Hz/Kpa, higher than the traditional sensors. Finally the processing techniques of the sensor chip have been designed with sample being successfully processed.

  16. Finite abelian subalgebra of W(sl(n))

    International Nuclear Information System (INIS)

    Niedermaier, M.

    1991-03-01

    A representation theoretical construction of the conservation laws of affine Toda-type systems is described. The construction employs the completely degenerate representations of the extended conformal algebras (W(sl(n)). The conserved charges are shown to generate an infinite dimensional abelian subalgebra of W(sl(n)). Different characterizations of this subalgebra are obtained: As space of physical Fock space operators with dihedral symmetry, as constants of commuting flows of quantum KdV-type equations and as subalgebra of the sl(n) singlets in affine sl(n) level 1 modules. The existence of the subalgebras is established for low rank cases by means of an algorithmic Fock space procedure. (orig.)

  17. Competition of Kondo spin fluctuations and RKKY interactions in CeRh/sub 2/Si/sub 2-x/Ge/sub x/ and CeM/sub 2/X/sub 2/ compounds: a Kondo necklace problem

    Energy Technology Data Exchange (ETDEWEB)

    Godart, C; Gupta, L C; Tomy, C V; Vijayaraghavan, R; Thompson, J D

    1989-02-15

    We present the results of our measurements of the lattice constants and magnetic susceptibility of the pseudo-ternary system which crystallizes in the tetragonal ThCr/sub 2/Si/sub 2/ structure. Both of the cell constants a and c increase linearly with x. The magnetic ordering temperature T/sub N/ exhibits initially an enhancement with the increase in x and then decreases as x continues to increase further. These results, along with those on the pressure dependence of T/sub N/ in CeRh/sub 2/Si/sub 2/, can be understood on the basis of the Doniach's model of a Kondo necklace. We discuss also the applicability of this model to describe the strong correlation between the structural aspects and the ground-state properties of the whole series of Ce-based ternaries CeM/sub 2/X/sub 2/ (M = 3d, 4d and 5d elements; X = Si, Ge).

  18. Abrasive wear of BA1055 bronze with additives of Si, Cr, Mo and/or W

    Directory of Open Access Journals (Sweden)

    B. P. Pisarek

    2008-10-01

    Full Text Available Aluminium bronzes belong to the high-grade constructional materials applied on the put under strongly load pieces of machines, aboutgood sliding, resistant properties on corrosion both in the cast state how and after the thermal processing. It moves to them Cr and Si in the aim of the improvement of their usable proprieties. The additions Mo and/or W were not applied so far. It was worked out therefore the new kind of bronzes casting including these elements. Make additions to the Cu-Al-Fe-Ni bronze of Si, Cr, Mo and/or W in the rise of these properties makes possible. The investigations of the surface distribution of the concentration of elements in the microstructure of the studied bronze on X-ray microanalyzer were conducted. It results from conducted investigations, that in the aluminium bronze BA1055 after makes additions Si, Cr, Mo and/or W the phases of the type κFe, κNi crystallize, probably as complex silicides. Elements such as: Fe and Si dissolve first of all in phases κ, in smaller stage in the matrix of the bronze; Mn, Ni and W they dissolve in matrix and phases κ. It dissolves Cr and Mo in the larger stage in phases κ than in the matrix. The sizes of the abrasive wear were compared in the state cast multicomponentnew casting Cu-Al-Fe-Ni bronzes with the additives Cr, Mo or W with the wear of the bronze CuAl10Fe5Ni5Si. The investigations of thewear were conducted on the standard device. It results from conducted investigations, that make additions to bronze BA1055 of the additives of Si, Cr, Mo, and/or W it influences the rise of the hardness (HB of the bronze in the cast state, in the result of the enlarged quantity separates of hard phases κ, and in the consequence the decrease of the abrasive wear. The addition of molybdenum made possible obtainment of the microhardness of the phase α and γ 2 on the comparable level. From the microstructure of the bronze CuAl10Fe5Ni5MoSi is characterizes the smallest abrasive wear among

  19. Phase selection and microstructure in directional solidification of glass forming Pd-Si-Cu alloys

    Science.gov (United States)

    Huo, Yang

    Phase selection and microstructure formation during the rapid solidification of alloy melts has been a topic of substantial interest over the last several decades, attributed mainly to the access to novel structures involving metastable crystalline and non-crystalline phases. In this work, Bridgeman type directional solidification was conducted in Pd-Si-Cu glass forming system to study such cooling rate dependent phase transition and microstructure formation. The equilibrium state for Pd-Si-Cu ternary system was investigated through three different works. First of all, phase stabilities for Pd-Si binary system was accessed with respects of first-principles and experiments, showing Pd5Si, Pd9Si2, Pd3Si and Pd 2Si phase are stable all way to zero Kevin while PdSi phase is a high temperature stable phase, and Pd2Si phase with Fe2P is a non-stoichiometry phase. A thermodynamic database was developed for Pd-Si system. Second, crystal structures for compounds with ternary compositions were studied by XRD, SEM and TEM, showing ordered and disordered B2/bcc phases are stable in Pd-rich part. At last, based on many phase equilibria and phase transitions data, a comprehensive thermodynamic discrption for Pd-Si-Cu ternary system was first time to be developed, from which different phase diagrams and driving force for kinetics can be calculated. Phase selection and microstructure formation in directional solidification of the best glass forming composition, Pd 77.5Si16.5Cu6, in this system with growth velocities from 0.005 to 7.5mm/s was systematically studied and the solidification pathways at different conditions were interpreted from thermodynamic simulation. The results show that for growth velocities are smaller than 0.1mm/s Pd 3Si phase is primary phase and Pd9Si2 phase is secondary phase, the difficulty for Pd9Si2 phase nucleation gives rise to the formation of two different eutectic structure. For growth velocities between 0.4 and 1mm/s, instead of Pd3Si phase, Pd9Si2

  20. Experimental and thermodynamic study of the Er-H-Zr ternary system

    International Nuclear Information System (INIS)

    Mascaro, A.

    2012-01-01

    This work at CEA is being achieved in the framework of the development of an innovating concept including the neutronic solid burnable poison, such as erbium, inside the cladding of pressurized water reactors. These new claddings are constituted by a liner of a zirconium base alloy slightly enriched in erbium between two liners of industrial zirconium alloys. Into the reactor core, the water dissociates at the surface of the cladding. So it is interesting to evaluate the interactions between the hydrogen released and the Zr-Er alloy. To do so, the Er-H-Zr ternary system has to be determined such similarly to its associated binaries. This can be done by experimental determination and by thermodynamic modelling. Both techniques were used in this work. Er-Zr and H-Zr have already been studied experimentally and modelled, but the Er-H binary system is almost unknown. So, we studied it experimentally. Then, it has been modelled using the Calphad method. We obtain a new evaluation of the Er-H binary system with phases limits rather different than what has been proposed in the literature. In order to determine the phase limits and, the potential existence of a ternary compound in the Er-H-Zr ternary system, an experimental study has been carried out. An original technique has been used to obtain the chemical compositions: ERDA combined with RBS. In this study, we propose a new isothermal section at 350 C of the Er-H-Zr ternary system. About the modelling, the compatibility of the three modelled binaries has been checked in order to optimize the ternary system by the projection of the three binaries. The calculation obtained is in good agreement with the experimental isothermal section at 350 C determined in our work. Finally, uniaxial tensile test campaigns have been conducted to evaluate the impact of erbium and/or hydrogen on the mechanical properties of an industrial zirconium pure alloy. We evidenced a hardening effect of erbium and hydrogen but these effects are not

  1. Me-Si-C (Me= Nb, Ti or Zr) : Nanocomposite and Amorphous Thin Films

    OpenAIRE

    Tengstrand, Olof

    2012-01-01

    This thesis investigates thin films of the transition metal carbide systems Ti-Si-C, Nb-Si-C, and Zr-Si-C, deposited at a low substrate temperature (350 °C) with dc magnetron sputtering in an Ar discharge. Both the electrical and mechanical properties of these systems are highly affected by their structure. For Nb-Si-C, both the ternary Nb-Si-C and the binary Nb-C are studied. I show pure NbC films to consist of crystalline NbC grains embedded in a matrix of amorphous carbon. The best combina...

  2. Ternary chalcogenide micro-pseudocapacitors for on-chip energy storage

    KAUST Repository

    Kurra, Narendra

    2015-05-11

    We report the successful fabrication of a micro-pseudocapacitor based on ternary nickel cobalt sulfide for the first time, with performance substantially exceeding that of previously reported micro-pseudocapacitors based on binary sulfides. CoNi2S4 micro-pseudocapacitor exhibits a maximum energy density of 18.7 mWh/cm3 at a power density of 1163 mW/cm3, opens up an avenue for exploring new family of ternary oxides/sulfides based micro-pseudocapacitors.

  3. Ternary chalcogenide micro-pseudocapacitors for on-chip energy storage

    KAUST Repository

    Kurra, Narendra; Xia, Chuan; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    We report the successful fabrication of a micro-pseudocapacitor based on ternary nickel cobalt sulfide for the first time, with performance substantially exceeding that of previously reported micro-pseudocapacitors based on binary sulfides. CoNi2S4 micro-pseudocapacitor exhibits a maximum energy density of 18.7 mWh/cm3 at a power density of 1163 mW/cm3, opens up an avenue for exploring new family of ternary oxides/sulfides based micro-pseudocapacitors.

  4. Facile Oxidative Desulfurisation of Benzothiophene Using Polyoxometalate H4[α-SiW12O40]/Zr Catalyst

    Directory of Open Access Journals (Sweden)

    Aldes Lesbani

    2015-07-01

    Full Text Available A highly active catalyst H4[α-SiW12O40]/Zr based polyoxometalete Keggin type was prepared by wet impregnation method and was characterized by FTIR spectroscopy, X-ray diffractometer, surface textural property by SEM, and analysis of porosity by BET method. H4[α-SiW12O40]/Zr was successfully synthesized and showed uniform properties with block solid structure which was applied as heterogeneous stable catalyst for oxidative desulfurization of benzothiophene under simple and mild condition using H2O2 as oxidant. Facile conversion of benzothiophene to sulfone by using heterogeneus                    H4[α-SiW12O40]/Zr catalyst up to 99% was observed to show the active catalytically. Keggin             H4[α-SiW12O40]/Zr cage structure after reaction was different from fresh catalyst which was indicated by the instability of H4[α-SiW12O40]/Zr  under reaction condition. © 2015 BCREC UNDIP. All rights reservedReceived: 9th November 2014; Revised: 31st March 2015; Accepted: 23rd April 2015How to Cite: Lesbani, A., Agnes, A., Saragih, R.O., Verawaty, M., Mohadi, R., Zulkifli, H. (2015.    Facile Oxidative Desulfurisation of Benzothiophen Using Polyoxometalate H4[α-SiW12O40]/Zr Catalyst. Bulletin of Chemical Reaction Engineering & Catalysis, 10 (2, 185-191. (doi:10.9767/bcrec.10.2.7734.185-191 Permalink/DOI: http://dx.doi.org/10.9767/bcrec.10.2.7734.185-191 

  5. pH-specific hydrothermal assembly of binary and ternary Pb(II)-(O,N-carboxylic acid) metal organic framework compounds: correlation of aqueous solution speciation with variable dimensionality solid-state lattice architecture and spectroscopic signatures.

    Science.gov (United States)

    Gabriel, C; Perikli, M; Raptopoulou, C P; Terzis, A; Psycharis, V; Mateescu, C; Jakusch, T; Kiss, T; Bertmer, M; Salifoglou, A

    2012-09-03

    Hydrothermal pH-specific reactivity in the binary/ternary systems of Pb(II) with the carboxylic acids N-hydroxyethyl-iminodiacetic acid (Heida), 1,3-diamino-2-hydroxypropane-N,N,N',N'-tetraacetic acid (Dpot), and 1,10-phenanthroline (Phen) afforded the new well-defined crystalline compounds [Pb(Heida)](n)·nH(2)O(1), [Pb(Phen)(Heida)]·4H(2)O(2), and [Pb(3)(NO(3))(Dpot)](n)(3). All compounds were characterized by elemental analysis, FT-IR, solution or/and solid-state NMR, and single-crystal X-ray diffraction. The structures in 1-2 reveal the presence of a Pb(II) center coordinated to one Heida ligand, with 1 exhibiting a two-dimensional (2D) lattice extending to a three-dimensional (3D) one through H-bonding interactions. The concurrent aqueous speciation study of the binary Pb(II)-Heida system projects species complementing the synthetic efforts, thereby lending credence to a global structural speciation strategy in investigating binary/ternary Pb(II)-Heida/Phen systems. The involvement of Phen in 2 projects the significance of nature and reactivity potential of N-aromatic chelators, disrupting the binary lattice in 1 and influencing the nature of the ultimately arising ternary 3D lattice. 3 is a ternary coordination polymer, where Pb(II)-Dpot coordination leads to a 2D metal-organic-framework material with unique architecture. The collective physicochemical properties of 1-3 formulate the salient features of variable dimensionality metal-organic-framework lattices in binary/ternary Pb(II)-(hydroxy-carboxylate) structures, based on which new Pb(II) materials with distinct architecture and spectroscopic signature can be rationally designed and pursued synthetically.

  6. Crystallization behavior and controlling mechanism of iron-containing Si-C-N ceramics.

    Science.gov (United States)

    Francis, Adel; Ionescu, Emanuel; Fasel, Claudia; Riedel, Ralf

    2009-11-02

    The crystallization behavior and controlling mechanism of the Si-Fe-C-N system based on polymer-derived SiCN ceramic filled with iron metal powder has been studied. The composite preparation conditions allow the formation of a random distribution of metallic particles in the polymer matrix volume for the Si-C-N system. Pyrolysis of the composite material at 1100 degrees C indicates the presence of one crystalline phase Fe(3)Si. While the sample pyrolyzed at 1200 degrees C reveals the formation of both Fe(3)Si and Fe(5)Si(3) phases, a crystallization of beta-SiC is additionally observed by increasing the temperature up to 1300 degrees C. The propensity for the formation of SiC is due to the presence of Fe(5)Si(3), where a solid-liquid-solid (SLS) growth mechanism was suggested to occur. X-ray diffraction (XRD), scanning electron microscopy (SEM), differential thermal analysis (DTA), and thermal gravimetric analysis with mass spectroscopic detection (TGA-MS) were employed to investigate the crystallization behavior of the Si-Fe-C-N system.

  7. Experimental investigation of phase equilibria in the Ni-Nb-V ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xingjun; Yang, Shuiyuan; Wang, Cuiping [Xiamen Univ. (China). Dept. of Materials Science and Engineering; Xiamen Univ. (China). Fujian Provincial Key Lab. of Materials Genome; Zhang, Xianjie; Jiang, Hengxing; Shi, Zhan [Xiamen Univ. (China). Dept. of Materials Science and Engineering

    2017-09-15

    The phase equilibria of the Ni-Nb-V ternary system at 1000 C and 1200 C were established using electron probe microanalysis, X-ray diffraction and differential scanning calorimetry. The results of the investigation revealed that: (1) The Nb solubility in (Ni) and σ{sup '} phases was less than 10 at.%; (2) A ternary compound τ (NiNbV) was confirmed, in which V had a large solubility; (3) A new liquid region was evident at 1200 C, but was absent at 1000 C; (4) The lattice constants of Ni{sub 3}Nb and Ni{sub 6}Nb{sub 7} phase decreased with increase in V content in the Ni{sub 3}Nb and Ni{sub 6}Nb{sub 7}. The phase equilibria of the Ni-Nb-V ternary system will contribute to its thermodynamic assessment.

  8. The Tl{sub 2}S–PbS–SiS{sub 2} system and the crystal and electronic structure of quaternary chalcogenide Tl{sub 2}PbSiS{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Mozolyuk, M.Y.; Piskach, L.V. [Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, 13 Voli Avenue, 43025, Lutsk (Ukraine); Fedorchuk, A.O. [Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, 50 Pekarska Street, 79010, Lviv (Ukraine); Olekseyuk, I.D.; Parasyuk, O.V. [Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, 13 Voli Avenue, 43025, Lutsk (Ukraine); Khyzhun, O.Y., E-mail: khyzhun@ipms.kiev.ua [Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, 03142, Kyiv (Ukraine)

    2017-07-01

    Chalcogenides of the quasi-ternary system Tl{sub 2}S–PbS–SiS{sub 2} were synthesized in the evacuated silica ampoules by the melting and annealing technique. Phase equilibria in the system was investigated by XRD method. Isothermal section of the system was studied, and two intermediate quaternary phases were discovered to exist (Tl{sub 2}PbSiS{sub 4}, ∼Tl{sub 2}PbSi{sub 3}S{sub 8}). The quasi-binary section Tl{sub 2}SiS{sub 3}–PbS was investigated by DTA. Its phase diagram was constructed, and it was established that the equimolar compound melts incongruently at 818 K. The crystal structure of the quaternary compound Tl{sub 2}PbSiS{sub 4} was determined by X-ray powder diffraction. It crystallizes in the monoclinic space group P2{sub 1}/a with the unit-cell parameters a = 8.8141(4), b = 9.0150(5), c = 10.4383(5) Å, and β = 94.490(4)° (Tl{sub 2}PbGeS{sub 4} structure type). Reliability factors calculated in the isotropic approximation were found to be R{sub I} = 0.0564 and R{sub P} = 0.1070. The Tl{sub 2}PbSiS{sub 4} single crystal was tested with X-ray photoelectron spectroscopy. In particular, the XPS core-level and valence-band spectra were recorded for pristine and Ar{sup +}-ion bombarded surfaces of Tl{sub 2}PbSiS{sub 4}. The Tl{sub 2}PbSiS{sub 4} single crystal was found to be rather stable with respect to Ar{sup +}-ion irradiation. We have also measured the X-ray emission band depicting the energy distribution of mainly the S 3p states and compared it on a common energy scale with the XPS valence-band spectrum of the Tl{sub 2}PbSiS{sub 4} crystal. The above comparison indicates that the S 3p states contribute substantively in the upper portion of the valence band of Tl{sub 2}PbSiS{sub 4}, with their significant contributions in other portions of the valence-band region. - Highlights: • Chalcogenides of the quasi-ternary system Tl{sub 2}S–PbS–SiS{sub 2} were synthesized. • Two intermediate quaternary phases were discovered to exist (Tl

  9. Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

    International Nuclear Information System (INIS)

    Gassoumi, Malek; Mosbahi, Hana; Zaidi, Mohamed Ali; Gaquiere, Christophe; Maaref, Hassen

    2013-01-01

    Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO 2 passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO 2 film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device

  10. Phase equilibria of the Al-Pr-Zr ternary system at 773 K

    Energy Technology Data Exchange (ETDEWEB)

    She, Jia [Laboratory of Nonferrous Metal Materials and New Processing Technology, Ministry of Education, Guangxi University, Nanning, Guangxi 530004 (China); Zhan, Yongzhong, E-mail: zyzmatres@yahoo.com.c [Laboratory of Nonferrous Metal Materials and New Processing Technology, Ministry of Education, Guangxi University, Nanning, Guangxi 530004 (China); Li, Chunliu [Laboratory of Nonferrous Metal Materials and New Processing Technology, Ministry of Education, Guangxi University, Nanning, Guangxi 530004 (China); Du, Yong; Xu, Honghui; He, Yuehui [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China)

    2010-07-30

    The phase equilibria of the Al-Pr-Zr ternary system at 773 K have been investigated mainly by means of X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and differential thermal analysis (DTA). The 14 binary compounds, i.e. AlZr{sub 3}, AlZr{sub 2}, Al{sub 2}Zr{sub 3}, Al{sub 3}Zr{sub 4}, AlZr, Al{sub 3}Zr{sub 2}, Al{sub 2}Zr, Al{sub 3}Zr, {alpha}-Al{sub 11}Pr{sub 3}, Al{sub 3}Pr, Al{sub 2}Pr, {beta}-AlPr, AlPr{sub 2} and {beta}-AlPr{sub 3} were confirmed. No binary compound was found in the Pr-Zr binary system. The result shows that the isothermal section of the Al-Pr-Zr ternary system at 773 K consists of 17 single-phase regions, 31 two-phase regions and 15 three-phase regions. All the intermediate compounds phases in this system have not a remarkable solid solution at 773 K. No ternary compound is found in this work.

  11. Subsolidus phase relationships of the {beta}-sialon solid solution in the oxygen-rich part of the Nd-Si-Al-O-N system

    Energy Technology Data Exchange (ETDEWEB)

    Kaiser, A.; Telle, R. [Rheinisch Westfaelische Technische Hochschule Aachen (Germany). Inst. fuer Gesteinshuettenkunde; Herrmann, M.; Richter, H.J.; Hermel, W. [Fraunhofer Inst. Keramische Technologien und Sinterwerkstoffe, Dresden (Germany)

    2001-10-01

    The subsolidus phase relationships in the Nd{sub 2}O{sub 3}-Al{sub 2}O{sub 3}-SiO{sub 2} system and in the Si{sub 6-z}Al{sub z}O{sub z}N{sub 8-z} (0 {<=} z {<=} 4)-''Al{sub 2}O{sub 3}:AlN''-Al{sub 2}O{sub 3}-Nd{sub 2}O{sub 3}-SiO{sub 2}-range of the Nd-Si-Al-O-N system have been determined. 50 three- and four-phase equilibria were established in this phase region. The phase equilibria define the regions of stable coexistence between {beta}-sialon Si{sub 6-z}Al{sub z}O{sub z}N{sub 8-z} (0 {<=} z {<=} 4) and oxide or oxynitride compounds, which are potential grain boundary phases for silicon nitride ceramics. {beta}-Si{sub 3}N{sub 4} coexists with N-melilite (Nd{sub 2}Si{sub 3-x}Al{sub x}N{sub 4-x} (0 {<=} x {<=} 1)), N-{alpha}-wollastonite NdSi{sub 2}ON, a nitrogen-rich (Al, N)-apatite solid solution and Nd{sub 2}Si{sub 2}O{sub 7}. Between 0 {<=} z {<=} 0.8 {beta}-sialon (Si{sub 6-z}Al{sub z}O{sub z}N{sub 8-z}) is compatible with N-melilite (Nd{sub 2}Si{sub 3-x}Al{sub x}N{sub 4-x} (x = 1)), an (Al,N)-apatite of intermediate composition and Nd{sub 2}Si{sub 2}O{sub 7}. The equilibrium phases between z = 0.8 to z = 4 are NdAlO{sub 3} and the U-phase (Nd{sub 3}Si{sub 3-x}Al{sub 3+x}O{sub 12+x}N{sub 2-x}) as well as NdAl{sub 11+x}O{sub 18}N{sub x} (x = 1) and corundum at the Al-rich terminal composition (z = 4). (orig.)

  12. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001).

    Science.gov (United States)

    Li, Lianbi; Zang, Yuan; Hu, Jichao; Lin, Shenghuang; Chen, Zhiming

    2017-05-25

    The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm², the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm². Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  13. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001

    Directory of Open Access Journals (Sweden)

    Lianbi Li

    2017-05-01

    Full Text Available The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001 Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm2, the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm2. Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  14. Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

    Directory of Open Access Journals (Sweden)

    Bo Zhang

    2014-01-01

    Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

  15. Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

    Directory of Open Access Journals (Sweden)

    Dan Zhu

    2014-03-01

    Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

  16. Si/SiC heterojunction optically controlled transistor with charge compensation layer

    Directory of Open Access Journals (Sweden)

    Pu Hongbin

    2016-01-01

    Full Text Available A novel n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has been studied in the paper. The performance of the device is simulated using Silvaco Atlas tools, which indicates excellent performances of the device in both blocking state and conducting state. The device also has a good switching characteristic with 0.54μs as rising time and 0.66μs as falling time. With the charge compensation layer, the breakdown voltage and the spectral response intensity of the device are improved by 90V and 33A/W respectively. Compared with optically controlled transistor without charge compensation layer, the n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has a better performance.

  17. Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

    Science.gov (United States)

    Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

    2018-03-01

    The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.

  18. Thermodynamic description of the Al-Cu-Yb ternary system supported by first-principles calculations

    Directory of Open Access Journals (Sweden)

    Huang G.

    2016-01-01

    Full Text Available Phase relationships of the ternary Al-Cu-Yb system have been assessed using a combination of CALPHAD method and first principles calculations. A self-consistent thermodynamic parameter was established based on the experimental and theoretical information. Most of the binary intermetallic phases, except Al3Yb, Al2Yb, Cu2Yb and Cu5Yb, were assumed to be zero solubility in the ternary system. Based on the experimental data, eight ternary intermetallic compounds were taken into consideration in this system. Among them, three were treated as line compounds with large homogeneity ranges for Al and Cu. The others were treated as stoichiometric compounds. The calculated phase diagrams were in agreement with available experimental and theoretical data.

  19. Wpływ zmian stanów wody na zachowanie się modeli nasypów hydrotechnicznych wykonanych z popioło-żużla

    Directory of Open Access Journals (Sweden)

    Baran Przemysław

    2016-11-01

    Full Text Available Celem artykułu była analiza wpływu sposobu piętrzenia wody na zjawiska filtracyjne zachodzące w modelu nasypu wykonanego z popioło-żużla. Model nasypu został uformowany w korycie hydraulicznym w skali półtechnicznej (wysokość 0,6 m, długość w podstawie 2,0 m, szerokość 1,0 m. Badania polegały na obserwacji zachowania się modelu nasypu podczas kontrolowanego piętrzenia i opuszczania wody od strony górnej, dolnej oraz jednocześnie górnej i dolnej. Dodatkowo wykonano badania wybranych parametrów geotechnicznych materiału, który osadził się po stronie dolnej na skutek przelania się wody przez koronę nasypu. W wyniku przeprowadzonych badań i analiz stwierdzono, iż popioło-żużel może być stosowany jako materiał do budowy grobli, gdyż równoczesne piętrzenie i obniżanie wody po obu stronach nasypu nie spowodowało wystąpienia negatywnych skutków filtracji. W przypadku budowli piętrzących tylko z jednej strony badany materiał antropogeniczny wykazuje cechy niestabilne, wymagające zastosowania zabezpieczeń skarp przed negatywnymi skutkami filtracji.

  20. First principle study of cubic ScGaN ternaries

    International Nuclear Information System (INIS)

    Adli, W.; Mecheref, R.; Sekkal, N.; Tair, F.; Amrani, B.

    2008-08-01

    The electronic properties of the Sc x Ga1- x N ternary alloy are investigated. The transition from rocksalt (B1) to zinc blende (B3) structure is found to occur rapidly after incorporating just a small fraction (less than 1%) of Ga. In the present paper, the first principles method the full potential linear muffin-tin orbitals method (FPLMTO) in its atomic sphere approximation (ASA) coupled to the technique of the empty spheres is employed. Our results concerning the electronic properties are different from those reported in literature. (author)

  1. Synergy between Two Metal Catalysts: A Highly Active Silica Supported Bimetallic W/Zr Catalyst for Metathesis of n-Decane

    KAUST Repository

    Samantaray, Manoja

    2016-06-01

    A well-defined, silica supported, bimetallic precatalyst [≡Si-O-W(Me)5 ≡Si-O-Zr(Np)3](4) has been synthesized for the first time via successively grafting two organometallic complexes [W(CH3)6 (1) followed by ZrNp4 (2)] on a single silica support. Surprisingly, multiple quantum NMR characterization demonstrates that W and Zr species are in close proximity to each other. Hydrogenation of this bimetallic catalyst at room temperature showed the easy formation of Zirconium hydride, probably facilitated by tungsten hydride which was formed at this temperature. This bimetallic W/Zr hydride precatalyst proved to be more efficient (TON: 1436) than the monometallic W hydride (TON: 650) in metathesis of n-decane at 150 0C. This synergy between Zr and W suggests that the slow step of alkane metathesis is the C-H bond activation which occurs on Zr. The produced olefin resulting from a ß–H elimination undergoes easy metathesis on W.

  2. Obtenção de substratos cerâmicos no sistema Si-Al-O-N-C empregando polissiloxanos e carga de Si e Al2O3 Ceramic tapes of Si-Al-O-N-C compounds using mixtures of polyssiloxane and Si-Al2O3 fillers

    Directory of Open Access Journals (Sweden)

    R. M. Rocha

    2005-03-01

    Full Text Available A técnica de processamento de colagem por fita (tape casting tem sido amplamente utilizada na obtenção de cerâmicas para diferentes aplicações: substratos cerâmicos e estruturas planares em multicamadas para circuitos integrados e capacitores; eletrólitos sólidos para células a combustível e sensores; cerâmicas piezoelétricas para atuadores e transdutores; membranas de separação para micro-filtragem; compósitos estruturais e trocadores de calor. Neste trabalho, a técnica convencional de colagem por fita foi adaptada com a utilização do processo de pirólise controlada de misturas de polímeros e carga, empregando-se polissiloxanos e cargas de silício e alumina nas suspensões. Foram preparadas suspensões com 60% vol. de fase polimérica (polissiloxanos e metil-trietoxi-silano e 40% vol. de carga (Si e Al2O3, com diferentes concentrações dos polímeros e das cargas. As amostras na forma de substratos foram pirolisadas em atmosfera de nitrogênio a 1400 °C/2 h e 1500 °C/2 h, sendo convertidas em materiais cerâmicos no sistema Si-Al-O-N-C. O processo de pirólise foi caracterizado até a temperatura de 1000 ºC por análise termogravimétrica. As cerâmicas foram caracterizadas quanto às fases formadas, microestrutura, massa específica aparente e condutividade térmica. Os substratos cerâmicos apresentaram porosidade relativamente alta (entre 12 e 22% e baixa condutividade térmica (entre 3 e 8 W/m.K, sendo constituídos por fases cristalinas de beta-SiC, Si2ON2, O'-SiAlON, Al2O3, mulita e fase amorfa de SiOC; o Si foi observado nas amostras pirolisadas a 1400 ºC.The tape casting technique has been widely used to prepare ceramic tapes for different applications: ceramic substrates and multilayer planar structures for integrated circuits and capacitors, solid electrolytes for fuel cells and sensors, piezoelectric ceramics for actuators and transducers, membrane systems for micro-filtration, structural composites and

  3. Crystallization behavior of Li2O-SiO2, Na2O-SiO2 and Na2O-CaO-SiO2 glasses; Li2O-SiO2, Na2O-SiO2, Na2O-CaO-SiO2 kei glass no kessho sekishutsu kyodo

    Energy Technology Data Exchange (ETDEWEB)

    Tsutsumi, K.; Otake, J.; Nagasaka, T.; Hino, M. [Tohoku University, Sendai (Japan)

    1998-06-01

    It has been known that crystallization of mold powder is effective on the disturbance of heat transfer between mold and solidified shell in production of middle carbon steel slabs in continuous casting process. But it has not yet been made clear which composition of mold powder is the most suitable for crystallization. The crystallization behavior of Li2O-SiO2, Na2O-SiO2 and Na2O-CaO-SiO2 glasses was observed by differential thermal analysis (DTA) and hot-thermocouple methods with DTA in the present work. As a result, addition of alkaline metal and alkaline earth metal oxides to SiO2 increased the critical cooling rate for glass formation in binary system of Li2O-SiO2 and Na2O-SiO2 and Li2O-SiO2 system crystallized easier than Na2O-SiO2 system. In ternary system of Na2O-CaO-SiO2, addition of Na2O hurried the critical cooling rate at CaO/SiO2=0.93 mass ratio, but the rate was almost constant in the composition range of more than 15 mass% Na2O. The slag of CaO/SiO2=0.93 made the rate faster than the slag of CaO/SiO2=0.47 at constant content of 10mass% Na2O. 17 refs., 10 figs., 3 tabs.

  4. SYSTEM WYŚWIETLANIA PARAMETRÓW LOTU DLA ŚMIGŁOWCA TYPU Mi-17 – WYNIKI BADAŃ

    Directory of Open Access Journals (Sweden)

    Bęczkowski Grzegorz

    2015-08-01

    Full Text Available Przedmiotem artykułu są badania w locie nowo opracowanego systemu wyświetlania parametrów lotu (SWPL. Omawiany system przeznaczony jest do zobrazowania na wyświetlaczu przeziernym umieszczonym przed okiem pilota pełnej informacji pilotażowo-nawigacyjnej, ostrzeganiu o sytuacji niebezpiecznej na pokładzie śmigłowca i sygnalizacji błędów pracy systemów pokładowych. System przystosowany jest do pracy w warunkach dziennych i nocnych, przy czym w warunkach nocnych współpracuje z goglami noktowizyjnymi stosowanymi w lotnictwie Sił Zbrojnych RP.

  5. Thermodynamics and phase equilibria of ternary systems relevant to contact materials for compound semiconductors

    International Nuclear Information System (INIS)

    Ipser, H.; Richter, K.; Micke, K.

    1997-01-01

    In order to investigate the stability of ohmic contacts to compound semiconductors, it is necessary to know the phase equilibria in the corresponding multi-component systems. We are currently studying the phase equilibria and thermophysical properties of several ternary systems which are of interest in view of the use of nickel, palladium and platinum as contact materials for GaSb and InSb compound semiconductors: Ga-Ni-Sb, In-Ni-Sb, Ga-Pd-Sb and Ga-Pt-Sb. Phase equilibria are investigated by thermal analyses, X-ray powder diffraction methods as well as electron microprobe analysis. Thermodynamic properties are derived from vapour pressure measurements using an isopiestic method. It is planned to combine all information on phase equilibria and thermochemistry for the ternary and the limiting binary systems to perform an optimization of the ternary systems by computer calculations using standard software. (author)

  6. Ternary system of dihydroartemisinin with hydroxypropyl-β-cyclodextrin and lecithin: simultaneous enhancement of drug solubility and stability in aqueous solutions.

    Science.gov (United States)

    Wang, Dan; Li, Haiyan; Gu, Jingkai; Guo, Tao; Yang, Shuo; Guo, Zhen; Zhang, Xueju; Zhu, Weifeng; Zhang, Jiwen

    2013-09-01

    The purpose of this study was to simultaneously improve the solubility and stability of dihydroartemisinin (DHA) in aqueous solutions by a ternary cyclodextrin system comprised of DHA, hydroxypropyl-β-cyclodextrin (HP-β-CD) and a third auxiliary substance. Solubility and phase solubility studies were carried out to evaluate the solubilizing efficiency of HP-β-CD in association with various auxiliary substances. Then, the solid binary (DHA-HP-β-CD or DHA-lecithin) and ternary systems were prepared and characterized by Fourier transform infrared (FT-IR), differential scanning calorimetry (DSC) and power X-ray diffraction (PXRD). The effect of the ternary system on the solubility, dissolution and stability of DHA in aqueous solutions was also investigated. As a result, the soybean lecithin was found to be the most promising third component in terms of solubility enhancement. For the solid characterization, the disappearance of the drug crystallinity indicated the formation of new solid phases, implicating the formation of the ternary system. The dissolution rate of the solid ternary system was much faster than that of the drug alone and binary systems. Importantly, compared with binary systems, the ternary system showed a significant improvement in the stability of DHA in Hank's balanced salt solutions (pH 7.4). The solubility and stability of DHA in aqueous solutions were simultaneously enhanced by the ternary system, which might be attributed to the possible formation of a ternary complex. For the ternary interactions, results of molecular docking studies further indicated that the lecithin covered the top of the wide rim of HP-β-CD and surrounded around the peroxide bridging of DHA, providing the possibility for the ternary complex formation. In summary, the ternary system prepared in our study, with simultaneous enhancement of DHA solubility and stability in aqueous solutions, might have an important pharmaceutical potential in the development of a better

  7. Dielectronic and radiative recombination of Si- to N-like tungsten ions

    International Nuclear Information System (INIS)

    Biedermann, C; Radtke, R; Seidel, R; Behar, E

    2009-01-01

    We have performed x-ray spectroscopic measurements of the dielectronic recombination resonance strength for the LMn (n = 3, ..., 10) series of Si-like W 60+ to N-like W 67+ tungsten ions. Highly charged tungsten ions were produced, stored and excited with the Berlin electron beam ion trap and the emitted radiation was analyzed with a solid state detector. Information on the charge state abundance in the trap was extracted from a fit of the theoretical radiative recombination intensity to measured values. The fit procedure was only feasible when the fine structure, angular momentum of the recombination channels is taken into account. Our measurement of x-rays from n = 2-3, 2-4 and higher DR resonance transitions was compared to relativistic calculations of the DR cross sections and rate coefficients calculated with the Hebrew University Lawrence Livermore Atomic Code (HULLAC). The previous theoretical predictions for Ne-like tungsten (W 64+ ) were extended with calculations for ions in adjacent charge states and compare well with the observed DR resonance structure.

  8. Joining of Si3N4 ceramic using PdCo(NiSiB–V system brazing filler alloy and interfacial reactions

    Directory of Open Access Journals (Sweden)

    Huaping Xiong

    2014-02-01

    Full Text Available The wettability of V-active PdCo-based alloys on Si3N4 ceramic was studied with the sessile drop method. And the alloy of Pd50.0–Co33.7–Ni4.0–Si2.0–B0.7–V9.6 (wt%, was developed for Si3N4 ceramic joining in the present investigation. The rapidly-solidified brazing foils were fabricated by the alloy Pd50.0–Co33.7–Ni4.0–Si2.0–B0.7–V9.6. The average room-temperature three-point bend strength of the Si3N4/Si3N4 joints brazed at 1453 K for 10 min was 205.6 MPa, and the newly developed braze gives joint strengths of 210.9 MPa, 206.6 MPa and 80.2 MPa at high temperatures of 973 K, 1073 K and 1173 K respectively. The interfacial reaction products in the Si3N4/Si3N4 joint brazed at 1453 K for 10 min were identified to be VN and Pd2Si by XRD analysis. Based on the XEDS analysis result, the residual brazing alloy existing at the central part of the joint was verified as Co-rich phases, in which the concentration of element Pd was high up to 18.0–19.1 at%. The mechanism of the interfacial reactions was discussed. Pd should be a good choice as useful alloying element in newer high-temperature braze candidates for the joining of Si-based ceramics.

  9. A 1.1nW Energy Harvesting System with 544pW Quiescent Power for Next Generation Implants.

    Science.gov (United States)

    Bandyopadhyay, Saurav; Mercier, Patrick P; Lysaght, Andrew C; Stankovic, Konstantina M; Chandrakasan, Anantha P

    2014-12-01

    This paper presents a nW power management unit (PMU) for an autonomous wireless sensor that sustains itself by harvesting energy from the endocochlear potential (EP), the 70-100 mV electrochemical bio-potential inside the mammalian ear. Due to the anatomical constraints inside the inner ear, the total extractable power from the EP is limited to 1.1-6.25 nW. A nW boost converter is used to increase the input voltage (30-55 mV) to a higher voltage (0.8 to 1.1 V) usable by CMOS circuits in the sensor. A pW Charge Pump circuit is used to minimize the leakage in the boost converter. Further, ultra-low-power control circuits consisting of digital implementations of input impedance adjustment circuits and Zero Current Switching circuits along with Timer and Reference circuits keep the quiescent power of the PMU down to 544 pW. The designed boost converter achieves a peak power conversion efficiency of 56%. The PMU can sustain itself and a duty-cyled ultra-low power load while extracting power from the EP of a live guinea pig. The PMU circuits have been implemented on a 0.18µm CMOS process.

  10. H2SO4-HNO3-H2O ternary system in the stratosphere

    Science.gov (United States)

    Kiang, C. S.; Hamill, P.

    1974-01-01

    Estimation of the equilibrium vapor pressure over the ternary system H2SO4-HNO3-H2O to study the possibility of stratospheric aerosol formation involving HNO3. It is shown that the vapor pressures for the ternary system H2SO4-HNO3-H2O with weight composition around 70-80% H2SO4, 10-20% HNO3, 10-20% H2O at -50 C are below the order of 10 to the minus 8th mm Hg. It is concluded that there exists more than sufficient nitric acid and water vapor in the stratosphere to participate in ternary system aerosol formation at -50 C. Therefore, HNO3 should be present in stratospheric aerosols, provided that H2SO4 is also present.

  11. Ternary system of cesium, rubidium and lead iodides

    International Nuclear Information System (INIS)

    Volchanskaya, V.V.; Dunaeva, T.I.; Il'yasov, I.I.

    1990-01-01

    Meltability diagram of ternary system (CsI) 2 -(RbI) 2 -PbI 2 has been studied. The liquidus of the given system consists of crystallization fields of solid solutions (CsI-RbI) and (CsI·PbI 2 -RbI-PbI 2 ), fields of incongruently melting compounds 9RbI·PbI 2 , 4CsI·PbI 2 and field of PbI 2 component. In the system two nonvariant points at 410 and 380 deg C are detected

  12. Simulation of electron transmittance and tunnel current in n{sup +} Poly-Si/HfSiO{sub x}N/Trap/SiO{sub 2}/Si(100) capacitors using analytical and numerical approaches

    Energy Technology Data Exchange (ETDEWEB)

    Noor, Fatimah A., E-mail: fatimah@fi.itb.ac.id; Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal [Physics of Electronic Materials Research Division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jalan Ganesa 10, Bandung 40132 (Indonesia)

    2015-04-16

    In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.

  13. Investigation of Fe-Si-N films as magnetic overcoat for high density recording disk drives

    International Nuclear Information System (INIS)

    Gauvin, M.; Talke, F. E.; Fullerton, E. E.

    2010-01-01

    A 50-nm-thick Fe-Si-N films were deposited via reactive magnetron cosputtering of independent Fe and Si targets, in Ar/N 2 gas mixture, under different dc Fe target power conditions. Magnetic properties, mechanical hardness and tribological properties were characterized as a function of the Fe target power by magnetometry, nanoindentation, and nanoscratch testing, respectively. Deposited samples were found to be ferromagnetic with a coercivity of approximately 20 Oe and a saturation magnetization increasing from 200 to 1100 emu/cm 3 as a function of Fe sputter power, i.e., values typical of soft magnetic materials. The mechanical hardness was found to be between 50% and 70% of the hardness of a pure SiN x film. Nanotribological properties of films deposited with a Fe target power ≥80 W degraded rapidly.

  14. Dependence of glass-forming ability on starting compositions in Y2O3–Al2O3–SiO2 system

    OpenAIRE

    Yixiang Chen; Zengchao Yang; Bin He; Guanghua Liu; Jiangtao Li; Liang Wu

    2011-01-01

    The dependence of glass-forming ability on starting compositions in Y2O3–Al2O3–SiO2 (YAS) system has been investigated by melting experiment. Transparent YAS glasses have been prepared under the condition of furnace cooling instead of quenching. It is found that, in the YAS ternary phase diagram, the compositions on the Y3Al5O12–SiO2 line and with 52-68 mol% SiO2 have a higher glass-forming ability to produce pure glass. For the compositions with too much or less SiO2 or with Y/Al = 5/3, 1/1,...

  15. Thermodiffusion, molecular diffusion and Soret coefficient of binary and ternary mixtures of n-hexane, n-dodecane and toluene.

    Science.gov (United States)

    Alonso de Mezquia, David; Wang, Zilin; Lapeira, Estela; Klein, Michael; Wiegand, Simone; Mounir Bou-Ali, M

    2014-11-01

    In this study, the thermodiffusion, molecular diffusion, and Soret coefficients of 12 binary mixtures composed of toluene, n-hexane and n-dodecane in the whole range of concentrations at atmospheric pressure and temperatures of 298.15 K and 308.15 K have been determined. The experimental measurements have been carried out using the Thermogravitational Column, the Sliding Symmetric Tubes and the Thermal Diffusion Forced Rayleigh Scattering techniques. The results obtained using the different techniques show a maximum deviation of 9% for the thermodiffusion coefficient, 8% for the molecular diffusion coefficient and 2% for the Soret coefficient. For the first time we report a decrease of the thermodiffusion coefficient with increasing ratio of the thermal expansion coefficient and viscosity for a binary mixture of an organic ring compound with a short n-alkane. This observation is discussed in terms of interactions between the different components. Additionally, the thermogravitational technique has been used to measure the thermodiffusion coefficients of four ternary mixtures consisting of toluene, n-hexane and n-dodecane at 298.15 K. In order to complete the study, the values obtained for the molecular diffusion coefficient in binary mixtures, and the thermodiffusion coefficient of binary and ternary mixtures have been compared with recently derived correlations.

  16. GaN nanorods and LED structures grown on patterned Si and AlN/Si substrates by selective area growth

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shunfeng; Fuendling, Soenke; Soekmen, Uensal; Neumann, Richard; Merzsch, Stephan; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

    2010-07-15

    GaN nanorods (NRs) show promising applications in high-efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In this work, we performed GaN nanostructures growth by pre-patterning the Si and AlN/Si substrates. The pattern was transferred to Si and AlN/Si substrates by photolithography and inductively-coupled plasma etching. GaN NRs were grown on these templates by metal-organic vapour phase epitaxy (MOVPE). GaN grown on Si pillar templates show a truncated pyramidal structure. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the GaN nanostructures and terminate. GaN growth can also be observed on the sidewalls and bottom surface between the Si pillars. A simple phenomenological model is proposed to explain the GaN nanostructure growth on Si pillar templates. Based on this model, we developed another growth method, by which we grow GaN rod structures on pre-patterned AlN/Si templates. By in-situ nitridation and decreasing of the V/III ratio, we found that GaN rods only grew on the patterned AlN/Si dots with an aspect ratio of about 1.5 - 2. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Non-freely generated W-algebras and construction of N=2 super W-algebras

    International Nuclear Information System (INIS)

    Blumenhagen, R.

    1994-07-01

    Firstly, we investigate the origin of the bosonic W-algebras W(2, 3, 4, 5), W(2, 4, 6) and W(2, 4, 6) found earlier by direct construction. We present a coset construction for all three examples leading to a new type of finitely, non-freely generated quantum W-algebras, which we call unifying W-algebras. Secondly, we develop a manifest covariant formalism to construct N = 2 super W-algebras explicitly on a computer. Applying this algorithm enables us to construct the first four examples of N = 2 super W-algebras with two generators and the N = 2 super W 4 algebra involving three generators. The representation theory of the former ones shows that all examples could be divided into four classes, the largest one containing the N = 2 special type of spectral flow algebras. Besides the W-algebra of the CP(3) Kazama-Suzuki coset model, the latter example with three generators discloses a second solution which could also be explained as a unifying W-algebra for the CP(n) models. (orig.)

  18. Kinetics of radiation-induced segregation in ternary alloys

    International Nuclear Information System (INIS)

    Lam, N.O.; Kumar, A.; Wiedersich, H.

    1982-01-01

    Model calculations of radiation-induced segregation in ternary alloys have been performed, using a simple theory. The theoretical model describes the coupling between the fluxes of radiation-induced defects and alloying elements in an alloy A-B-C by partitioning the defect fluxes into those occurring via A-, B-, and C-atoms, and the atom fluxes into those taking place via vacancies and interstitials. The defect and atom fluxes can be expressed in terms of concentrations and concentration gradients of all the species present. With reasonable simplifications, the radiation-induced segregation problem can be cast into a system of four coupled partial-differential equations, which can be solved numerically for appropriate initial and boundary conditions. Model calculations have been performed for ternary solid solutions intended to be representative of Fe-Cr-Ni and Ni-Al-Si alloys under various irradiation conditions. The dependence of segregation on both the alloy properties and the irradiation variables, e.g., temperature and displacement rate, was calculated. The sample calculations are in good qualitative agreement with the general trends of radiation-induced segregation observed experimentally

  19. In-situ SiN{sub x}/InN structures for InN field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zervos, Ch., E-mail: hzervos@physics.uoc.gr; Georgakilas, A. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Beleniotis, P. [Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece)

    2016-04-04

    Critical aspects of InN channel field-effect transistors (FETs) have been investigated. SiN{sub x} dielectric layers were deposited in-situ, in the molecular beam epitaxy system, on the surface of 2 nm InN layers grown on GaN (0001) buffer layers. Metal-insulator-semiconductor Ni/SiN{sub x}/InN capacitors were analyzed by capacitance-voltage (C-V) and current-voltage measurements and were used as gates in InN FET transistors (MISFETs). Comparison of the experimental C-V results with self-consistent Schrödinger-Poisson calculations indicates the presence of a positive charge at the SiN{sub x}/InN interface of Q{sub if} ≈ 4.4 – 4.8 × 10{sup 13 }cm{sup −2}, assuming complete InN strain relaxation. Operation of InN MISFETs was demonstrated, but their performance was limited by a catastrophic breakdown at drain-source voltages above 2.5–3.0 V, the low electron mobility, and high series resistances of the structures.

  20. Volumetric properties of ternary (IL + 2-propanol or 1-butanol or 2-butanol + ethyl acetate) systems and binary (IL + 2-propanol or 1-butanol or 2-butanol) and (1-butanol or 2-butanol + ethyl acetate) systems

    International Nuclear Information System (INIS)

    Bahadur, Indra; Deenadayalu, Nirmala; Tywabi, Zikhona; Sen, Sabyasachi; Hofman, Tadeusz

    2012-01-01

    Highlights: ► Experimental densities were determined at T = (298.15, 303.15, and 313.15) K. ► IL: methyl trioctylammonium bis(trifluoromethylsulfonyl)imide was used. ► Virial Based Mixing Rule correlation of the binary excess molar volume data. ► Binary excess molar volume was both negative and positive. ► Ternary excess molar volume data was correlated with the Cibulka equation. - Abstract: The experimental densities for the binary or ternary systems were determined at T = (298.15, 303.15, and 313.15) K. The ionic liquid methyl trioctylammonium bis(trifluoromethylsulfonyl)imide ([MOA] + [Tf 2 N] − ) was used for three of the five binary systems studied. The binary systems were ([MOA] + [Tf 2 N] − + 2-propanol or 1-butanol or 2-butanol) and (1-butanol or 2-butanol + ethyl acetate). The ternary systems were {methyl trioctylammonium bis(trifluoromethylsulfonyl)imide + 2-propanol or 1-butanol or 2-butanol + ethyl acetate}. The binary and ternary excess molar volumes for the above systems were calculated from the experimental density values for each temperature. The Redlich–Kister smoothing polynomial was fitted to the binary excess molar volume data. Virial-Based Mixing Rules were used to correlate the binary excess molar volume data. The binary excess molar volume results showed both negative and positive values over the entire composition range for all the temperatures. The ternary excess molar volume data were successfully correlated with the Cibulka equation using the Redlich–Kister binary parameters.

  1. Construction of g-C3N4/CeO2/ZnO ternary photocatalysts with enhanced photocatalytic performance

    Science.gov (United States)

    Yuan, Yuan; Huang, Gui-Fang; Hu, Wang-Yu; Xiong, Dan-Ni; Zhou, Bing-Xin; Chang, Shengli; Huang, Wei-Qing

    2017-07-01

    Promoting the spatial separation of photoexcited charge carriers is of paramount significance for photocatalysis. In this work, binary g-C3N4/CeO2 nanosheets are first prepared by pyrolysis and subsequent exfoliation method, then decorated with ZnO nanoparticles to construct g-C3N4/CeO2/ZnO ternary nanocomposites with multi-heterointerfaces. Notably, the type-II staggered band alignments existing between any two of the constituents, as well as the efficient three-level transfer of electron-holes in unique g-C3N4/CeO2/ZnO ternary composites, leads to the robust separation of photoexcited charge carriers, as verified by its photocurrent increased by 8 times under visible light irradiation. The resulting g-C3N4/CeO2/ZnO ternary nanocomposites unveil appreciably increased photocatalytic activity, faster than that of pure g-C3N4, ZnO and g-C3N4/CeO2 by a factor of 11, 4.6 and 3.7, respectively, and good stability toward methylene blue (MB) degradation. The remarkably enhanced photocatalytic activity of g-C3N4/CeO2/ZnO ternary heterostructures can be interpreted in terms of lots of active sites of nanosheet shapes and the efficient charge separation owing to the resulting type-II band alignment with more than one heterointerface and the efficient three-level electron-hole transfer. A plausible mechanism is also elucidated via active species trapping experiments with various scavengers, which indicating that the photogenerated holes and •OH radicals play a crucial role in photodegradation reaction under visible light irradiation. This work suggest that the rational design and construction of type II multi-heterostructures is powerful for developing highly efficient and reusable visible-light photocatalysts for environmental purification and energy conversion.

  2. The effect of Si content on the fracture toughness of CrAlN/Si3N4 coatings

    International Nuclear Information System (INIS)

    Liu, S.; Wheeler, J. M.; Davis, C. E.; Clegg, W. J.; Zeng, X. T.

    2016-01-01

    CrAlN/Si 3 N 4 nanocomposite coatings with different Si contents were deposited to understand how Si influences the microstructure and mechanical behaviour of the coatings, in particular, the fracture toughness. The coating composition, chemical bonding, microstructure, and mechanical properties were studied by energy dispersive spectroscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and nanoindentation, respectively. Using a micro double cantilever beam sample, it was found that the fracture toughness of CrAlN/Si 3 N 4 coatings was higher than that of both the CrN and CrAlN coatings and increased with increasing Si content. Cross-sectional transmission electron microscopy suggested that this was caused by the suppression of cracking at columnar boundaries

  3. Influence of PECVD deposited SiNx passivation layer thickness on In0.18Al0.82N/GaN/Si HEMT

    International Nuclear Information System (INIS)

    Singh, Sarab Preet; Liu, Yi; Ngoo, Yi Jie; Kyaw, Lwin Min; Bera, Milan Kumar; Chor, Eng Fong; Dolmanan, S B; Tripathy, Sudhiranjan

    2015-01-01

    The influence of plasma enhanced chemical vapour deposited (PECVD) silicon nitride (SiN x ) passivation film thickness on In 0.18 Al 0.82 N/GaN/Si heterostructures and HEMTs has been investigated. The formation of Si 3 N 4 was confirmed by x-ray photoelectron spectroscopy (XPS) measurements. X-ray reflectivity (XRR) measurements reveal that both the density and roughness of the SiN x film increase with increasing film thickness. With an increase in SiN x film thickness, a significant increase in two-dimensional electron gas (2DEG) density, drain current, extrinsic transconductance and negative threshold voltage shift of the In 0.18 Al 0.82 /GaN/Si HEMTs are observed. An optimal thickness of SiN x is ∼100 nm and it yields a substantial increase in 2DEG density (∼30%) with a minimum sheet resistance for In 0.18 Al 0.82 N/GaN/Si heterostructures. Furthermore, we correlate the observed SiN x film thickness-dependent electrical characteristics of In 0.18 Al 0.82 /GaN/Si HEMTs with the density of the SiN x film. (paper)

  4. Relationship Between Crystalline Structure and Hardness of Ti-Si-N-O Coatings Fabricated by dc Sputtering

    Science.gov (United States)

    García-González, Leandro; Hernández-Torres, Julián; Mendoza-Barrera, Claudia; Meléndez-Lira, Miguel; García-Ramírez, Pedro J.; Martínez-Castillo, Jaime; Sauceda, Ángel; Herrera-May, Agustin L.; Muñoz Saldaña, Juan; Espinoza-Beltrán, Francisco J.

    2008-08-01

    Ti-Si-N-O coatings were deposited on AISI D2 tool steel and silicon substrates by dc reactive magnetron co-sputtering using a target of Ti-Si with a constant area ratio of 0.2. The substrate temperature was 400 °C and reactive atmosphere of nitrogen and argon. For all samples, argon flow was maintained constant at 25 sccm, while the flow of the nitrogen was varied to analyze the structural changes related to chemical composition and resistivity. According to results obtained by x-ray diffraction and stoichiometry calculations by x-ray energy dispersive spectroscopy the Ti-Si-N-O coatings contain two solid solutions. The higher crystalline part corresponds to titanium oxynitrure. Hardness tests on the coatings were carried out using the indentation work model and the hardness value was determined. Finally, the values of hardness were corroborated by nanoindentation test, and values of Young’s modulus and elastic recovery were discussed. We concluded that F2TSN sample ( F Ar = 25 sccm, F N = 5 sccm, P = 200 W, and P W = 8.9 × 10-3 mbar) presented the greatest hardness and the lowest resistivity values, due to its preferential crystalline orientation.

  5. Effect of Si and Mn additions on ferrite and austenite phase fractions in 25Cr-7Ni-1.5Mo-3W base super duplex stainless steels

    International Nuclear Information System (INIS)

    Jeong, S.W.; Lee, Z.-H.; Lee, H.M.

    2000-01-01

    The effect of heat treatment and Si and Mn additions on the ferrite and austenite phase fractions of the super duplex stainless steel (SDSS), Fe-25Cr-7Ni-1.5Mo-3W-Si-Mn-0.25N (numbers are all in wt.% unless specified otherwise), was investigated. The thermodynamic calculations of phase equilibria and phase fractions were performed using the Thermo-Calc program. Based on the calculated results, specific compositions of Si and Mn were selected and alloys with these compositions were analysed by Feritscope, X-ray diffractometry and scanning electron microscopy. The calculated phase fractions and experimentally analysed ones were compared and there was a good agreement between calculations and measurements. The optimum heat treatment condition for Fe-25Cr-7Ni-1.5Mo-3W-0.5Si-0.5Mn-0.25N is to hold at 1050 to 1100 C for 2 h in considering the ferrite to austenite ratio of 50:50 and to avoid second phase precipitation such as the σ phase. It was suggested that an excessive addition of more than 0.8Si and 1.0Mn may induce the σ phase precipitation. (orig.)

  6. [Evaluation of the Peusner's coefficients matrix for polymeric membrane and ternary non-electrolyte solutions].

    Science.gov (United States)

    Jasik-Slęzak, Jolanta; Slęzak-Prochazka, Izabella; Slęzak, Andrzej

    2014-01-01

    A system of network forms of Kedem-Katchalsky (K-K) equations for ternary non-electrolyte solutions is made of eight matrix equations containing Peusner's coefficients R(ij), L(ij), H(ij), W(ij), K(ij), N(ij), S(ij) or P(ij) (i, j ∈ {1, 2, 3}). The equations are the result of symmetric or hybrid transformation of the classic form of K-K equations by the use of methods of Peusner's network thermodynamics (PNT). Calculating concentration dependences of the determinant of Peusner's coefficients matrixes R(ij), L(ij), H(ij), W(ij), S(ij), N(ij), K(ij) and P(ij) (i, j ∈ {1, 2, 3}). The material used in the experiment was a hemodialysis Nephrophan membrane with specified transport properties (L(p), σ, Ω) in aqueous glucose and ethanol solution. The method involved equations for determinants of the matrixes coefficients R(ij), L(ij), H(ij), W(ij), S(ij), N(ij), K(ij) or P(ij) (i, j ∈ {1, 2, 3}). The objective of calculations were dependences of determinants of Peusner's coeffcients matrixes R(ij), L(ij), H(ij), W(ij), S(ij), N(ij), K(ij) or P(ij) (i, j ∈ {1, 2, 3}) within the conditions of solution homogeneity upon an average concentration of one component of solution in the membrane (C1) with a determined value of the second component (C2). The method of calculating the determinants of Peusner's coeffcients matrixes R(ij), L(ij), H(ij), W(ij), S(ij), N(ij), K(ij) or P(ij) (i, j ∈ {1, 2, 3}) is a new tool that may be applicable in studies on membrane transport. Calculations showed that the coefficients are sensitive to concentration and composition of solutions separated by a polymeric membrane.

  7. Organic alloy systems suitable for the investigation of regular binary and ternary eutectic growth

    Science.gov (United States)

    Sturz, L.; Witusiewicz, V. T.; Hecht, U.; Rex, S.

    2004-09-01

    Transparent organic alloys showing a plastic crystal phase were investigated experimentally using differential scanning calorimetry and directional solidification with respect to find a suitable model system for regular ternary eutectic growth. The temperature, enthalpy and entropy of phase transitions have been determined for a number of pure substances. A distinction of substances with and without plastic crystal phases was made from their entropy of melting. Binary phase diagrams were determined for selected plastic crystal alloys with the aim to identify eutectic reactions. Examples for lamellar and rod-like eutectic solidification microstructures in binary systems are given. The system (D)Camphor-Neopentylglycol-Succinonitrile is identified as a system that exhibits, among others, univariant and a nonvariant eutectic reaction. The ternary eutectic alloy close to the nonvariant eutectic composition solidifies with a partially faceted solid-liquid interface. However, by adding a small amount of Amino-Methyl-Propanediol (AMPD), the temperature of the nonvariant eutectic reaction and of the solid state transformation from plastic to crystalline state are shifted such, that regular eutectic growth with three distinct nonfaceted phases is observed in univariant eutectic reaction for the first time. The ternary phase diagram and examples for eutectic microstructures in the ternary and the quaternary eutectic alloy are given.

  8. A constitutional investigation of the Mo-Pd-Rh ternary system at 1100deg C

    International Nuclear Information System (INIS)

    Guerler, R.; Pratt, J.N.

    1991-01-01

    Phase relations in the system Mo-Pd-Rh were studied at 1100deg C using conventionally melted and ultrarapidly solidified samples. Optical microscopy, X-ray diffraction, scanning electron microscopy and electron probe microanalysis were used for phase characterisation. The complete isothermal section at 1100deg C was established. The Mo bcc phase was found to have a very limited solid solution range whereas the ternary fcc solid solution originating on the Pd-Rh binary is the dominant phase in the system at this temperature. The centre of the isothermal is dominated by the ternary extension of the Mo-Rh hcp intermediate phase. The three phase (bcc+fcc+hcp) equilibrium region is located very near to the Mo-Pd binary system. No additional ternary intermediate phases were observed. The results are consistent with an isothermal section reported at higher temperatures. (orig.)

  9. Microstructures and room temperature fracture toughness of Nb/Nb5Si3 composites alloyed with W, Mo and W–Mo fabricated by spark plasma sintering

    International Nuclear Information System (INIS)

    Xiong, Bowen; Cai, Changchun; Wang, Zhenjun

    2014-01-01

    Highlights: • Microstructure of Nb/Nb 5 Si 3 composite alloyed with W and Mo is change obviously. • W and Mo elements can solid solution in Nb and Nb 5 Si 3 phase respectively. • Alloyed with W and Mo together, the solid solubility of Nb 5 Si 3 phases is undetected. • The Nb/Nb 5 Si 3 composite alloyed with W and Mo together has high fracture toughness. - Abstract: Microstructures and room temperature fracture toughness of Nb/Nb 5 Si 3 composites alloyed with W, Mo and W–Mo fabricated by spark plasma sintering were investigated. The microstructures were examined using scanning electron microscope (SEM). X-ray diffraction (XRD) was performed on the bulk specimens for identification of phases. The chemical species were analyzed using electron-probe micro-analysis (EPMA). Results indicated that the microstructures of Nb/Nb 5 Si 3 composites alloyed with W or Mo is unaltered, including primary Nb and eutectic mixtures of Nb and Nb 5 Si 3 , and the coarse and fine eutectic mixtures. The W and Mo elements solid solution in Nb and Nb 5 Si 3 phase are detected. But that alloyed with W and Mo together, The microstructures are change obviously, including Nb phase, the solid solubility phases of W and Mo atoms in Nb, and the solid solubility phases of Nb atoms in W are also found, but the solid solubility phenomenon of Nb 5 Si 3 phases is not detected. The microhardness of Nb and Nb 5 Si 3 phases increases obviously because of solid solution strengthening. The Nb/Nb 5 Si 3 composite alloyed with W and Mo together hashing high fracture toughness is attributable to the big eutectic Nb and interface of eutectic phases, which can bear large deformation to absorb the crack energy and form the decohesion between eutectic phases

  10. Latest R&D news and beam test performance of the highly granular SiW-ECAL technological prototype for the ILC

    Science.gov (United States)

    Irles, A.

    2018-02-01

    High precision physics at future colliders as the International Linear Collider (ILC) require unprecedented high precision in the determination of the energy of final state particles. The needed precision will be achieved thanks to the Particle Flow algorithms (PF) which require highly granular and hermetic calorimeters systems. The physical proof of concept of the PF was performed in the previous campaign of beam tests of physic prototypes within the CALICE collaboration. One of these prototypes was the physics prototype of the Silicon-Tungsten Electromagnetic Calorimeter (SiW-ECAL) for the ILC. In this document we present the latest news on R&D of the next generation prototype, the technological prototype with fully embedded very front-end (VFE) electronics, of the SiW-ECAL. Special emphasis is given to the presentation and discussion of the first results from the beam test done at DESY in June 2017. The physics program for such beam test consisted in the calibration and commissioning of the current set of available SiW ECAL modules; the test of performance of individual slabs under 1T magnetic fields; and the study of electromagnetic showers events.

  11. Thermodynamic and kinetic aspects on the selective surface oxidation of binary, ternary and quarternary model alloys

    International Nuclear Information System (INIS)

    Swaminathan, Srinivasan; Spiegel, Michael

    2007-01-01

    Segregation and selective oxidation phenomena of minor alloying elements during annealing of steel sheets lead to the formation of bare spots after hot dip galvanizing. In order to understand the influence of common alloying elements on the surface chemistry after annealing, model alloys of binary (Fe-2Si, Fe-2Mn and Fe-0.8Cr), ternary (Fe-2Mn-2Si, Fe-2Mn-0.8Cr and Fe-2Si-0.8Cr) and quarternary (Fe-2Mn-2Si-0.8Cr) systems were investigated. The specimens were annealed for 60 s at 820 deg. C in N 2 -5% H 2 gas atmospheres with different dew points -80 and -40 deg. C, respectively. Surface chemistry of the annealed specimens was obtained by using X-ray photoelectron spectroscopy (XPS). The field emission scanning electron microscopy (FE-SEM) was used to view surface morphology. At low dew point -80 deg. C, apart from the thermodynamical calculations such as solubility product of oxides and their critical solute concentrations, kinetics play a decisive role on the selective oxidation, i.e. oxygen competition. As expected, the amount of external selective oxidation of alloying elements are well pronounced at higher dew point -40 deg. C. An attempt has been made to explain the dominant process of Si and Mn on Cr-oxidation and segregation. It is observed that annealing of quarternary system at higher dew point shifts the Cr-oxidation from external to internal

  12. Thermodynamic and kinetic aspects on the selective surface oxidation of binary, ternary and quarternary model alloys

    Energy Technology Data Exchange (ETDEWEB)

    Swaminathan, Srinivasan [High Temperature Reactions Group, Department of Interface Chemistry and Surface Engineering, Max-Planck-Institut fuer Eisenforschung GmbH, Max-Planck-Str. 1, D-40237 Duesseldorf (Germany)]. E-mail: s.swaminathan@mpie.de; Spiegel, Michael [High Temperature Reactions Group, Department of Interface Chemistry and Surface Engineering, Max-Planck-Institut fuer Eisenforschung GmbH, Max-Planck-Str. 1, D-40237 Duesseldorf (Germany)

    2007-03-15

    Segregation and selective oxidation phenomena of minor alloying elements during annealing of steel sheets lead to the formation of bare spots after hot dip galvanizing. In order to understand the influence of common alloying elements on the surface chemistry after annealing, model alloys of binary (Fe-2Si, Fe-2Mn and Fe-0.8Cr), ternary (Fe-2Mn-2Si, Fe-2Mn-0.8Cr and Fe-2Si-0.8Cr) and quarternary (Fe-2Mn-2Si-0.8Cr) systems were investigated. The specimens were annealed for 60 s at 820 deg. C in N{sub 2}-5% H{sub 2} gas atmospheres with different dew points -80 and -40 deg. C, respectively. Surface chemistry of the annealed specimens was obtained by using X-ray photoelectron spectroscopy (XPS). The field emission scanning electron microscopy (FE-SEM) was used to view surface morphology. At low dew point -80 deg. C, apart from the thermodynamical calculations such as solubility product of oxides and their critical solute concentrations, kinetics play a decisive role on the selective oxidation, i.e. oxygen competition. As expected, the amount of external selective oxidation of alloying elements are well pronounced at higher dew point -40 deg. C. An attempt has been made to explain the dominant process of Si and Mn on Cr-oxidation and segregation. It is observed that annealing of quarternary system at higher dew point shifts the Cr-oxidation from external to internal.

  13. New method for the simultaneous condensation of complete ternary alloy systems under ultrahigh vacuum conditions

    International Nuclear Information System (INIS)

    Mehrtens, A.; Moske, M.; Samwer, K.

    1988-01-01

    An ultrahigh vacuum apparatus is described for the simultaneous condensation of complete ternary alloy systems. Three singly controlled electron beam evaporation sources provide a constant evaporation rate of the different elements. A specially designed rotating mask guarantees a concentration gradient on the substrate according to a ternary phase diagram. The conversion of the actual concentration profile into a standard ternary phase diagram is done by simple computer calculations. They involve corrections for the beam characteristics of the evaporation sources and for the rotating mask. As an example, measurements for the Zr--Cu--Co system are given. The concentration range for the amorphous phase is compared with thermodynamic predictions using Miedema's parameter

  14. Liquid formation in the Y-Si-Al-O-N system

    Energy Technology Data Exchange (ETDEWEB)

    Redington Keely, W.; Redington, M.; Hampshire, S. [Limerick Univ. (Ireland). Materials Research Centre

    2000-07-01

    Some silicon nitride ceramics are sintered using a combination of Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} additives to form a Y-Si-Al-O-N liquid that promotes densification and allows the {alpha}{yields}{beta} transformation to take place by solution/precipitation through the liquid which cools as an intergranular phase. The type and amount of additive determines the nature and quantity of the resulting grain boundary phase as indicated and this can affect high temperature strength, creep resistance and oxidation resistance. Thus it is important to understand the phase equilibria in these complex systems and then apply this knowledge to processing, the development of beneficial microstructures and the relationship between these and properties. One difficulty is that, for any particular composition, the quantity and composition of the liquid at the sintering temperature is not known accurately and a full compositional representation has not been achieved. This paper attempts to represent the liquid region at various temperatures in the Jaenecke prism of the Y-Si-Al-O-N system. Published information on liquid compositions, standardised into eq.% format, was combined with experimental data interpolated from the less well defined regions to build a composite picture of liquid in this system. Representation was achieved using a customised graphical environment, AutoCAD trademark. AutoLISP trademark routines combined with this drafting package allow data from multiple sources to be integrated. This results in a series of overlays which indicate the liquid region from its initial formation at 1335 C and its subsequent development at different ''milestone'' temperatures. At 1700 C the orthographic projections of the liquid region are combined to give a volume bounded by nurbs surfaces, using ALIAS trademark software, to enable visualisation of the proposed liquid region. (orig.)

  15. Study Of Boosted W-Jets And Higgs-Jets With the SiFCC Detector

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Shin-Shan [Taiwan, Natl. Central U.; Chekanov, Sergei [Argonne; Gray, Lindsey [Fermilab; Kotwal, Ashutosh [Duke U.; Sen, Sourav [Duke U.; Tran, Nhan Viet [Fermilab

    2016-11-04

    We study the detector performance in the reconstruction of hadronically-decaying W bosons and Higgs bosons at very high energy proton colliders using a full GEANT4 simulation of the SiFCC detector. The W and Higgs bosons carry transverse momentum in the multi-TeV range, which results in collimated decay products that are reconstructed as a single jet. We present a measurement of the energy response and resolution of boosted W-jets and Higgs-jets and show the separation of two sub-jets within the boosted boson jet.

  16. Effect of Alloying Additions on the Phase Equilibria and Oxidation in the Mo-Si-B System

    National Research Council Canada - National Science Library

    Mendiratta, M

    2001-01-01

    .... For high-pressure turbine blade application, the ternary Mo-Si-B compositions exhibit adequate oxidation resistance in the temperature range of 1000 to 1300 deg C, but below 1000 deg C, the oxidation...

  17. The W(sl(N+3), sl(3)) algebra and their contractions to W3

    International Nuclear Information System (INIS)

    Bellucci, S.

    1996-09-01

    The authors construct the nonlinear W(sl(N+3), sl(3)) algebras and find the spectrum of values of the central charge that gives rise, by contracting the W(sl(N+3), sl(3)) algebras, to a W 3 algebra belonging to the coset W((sl(N+3), sl(3)/(u(1) x sl(N)). Using the tool of embedding the W(sl(N+3), sl(3)) algebras into linearizing algebras, the authors construct new realization of W 3 modulo null fields. The possibility to reproduce, within the conformal linearization framework, the central charge spectrum for minimal models of the nonlinear W(sl(N+3), sl(3)) algebras is discussed at the end

  18. Metody prognozowania upadłościprzedsiębiorstw w krajach rozwijających się na przykładzie Malezji

    Directory of Open Access Journals (Sweden)

    Paweł Kopczyński

    2010-04-01

    Full Text Available Przedsiębiorstwa prowadzą obecnie działalność w otoczeniu, które jest zmienne i turbulentne. Bardzo ważna jest umiejętność przewidywania trudności finansowych i ciągła ocena kondycji firmy, gdyż każda jednostka gospodarcza może znaleźć się na krawędzi bankructwa. Jedynie w takim przypadku menedżerowie mogą podjąć działania restrukturyzacyjne i ocalić ją od upadku. Jeżeli jednak nie wiedzą, jak zła jest sytuacja podmiotu, może być zbyt późno na jego reorganizację i ocalenie. Z tego powodu niezwykle ważne jest opracowywanie modeli pozwalających oceniać kondycję przedsiębiorstw i ryzyko bankructwa. Wnioski badawcze wyciągnięte przez naukow-ców w krajach wysoko rozwiniętych (takich jak USA, Kanada, Zjednoczone Króle-stwo czy Niemcy mogą okazać się przydatne przy opracowywaniu metod przewi-dywania upadłości w Polsce. Jednak polska gospodarka różni się znacząco od go-spodarek bogatych państw Unii Europejskiej oraz Stanów Zjednoczonych. Dlatego polscy pracownicy naukowi powinni koncentrować się nie tylko na badaniach pro-wadzonych przez Altmana, Tafflera czy Beavera, ale także wzorować się na doko-naniach naukowców z krajów rozwijających się, takich jak Malezja. Celem niniej-szego artykułu jest zaprezentowanie metod przewidywania upadłości w Malezji. Być może, warto byłoby przeprowadzić podobne badania w Polsce.

  19. Fabrication of low thermal expansion SiC/ZrW{sub 2}O{sub 8} porous ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Poowancum, A; Matsumaru, K; Juarez-Ramirez, I; Ishizaki, K [Department of Mechanical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188 (Japan); Torres-Martinez, L M [Universidad Autonoma de Nuevo Leon, Av. Universidad s/n, San Nicolas de los Garza, NL, C.P. 66451 (Mexico); Fu, Z Y [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei, 430070 (China); Lee, S W, E-mail: anurat@ishizaki.nagaokaut.ac.jp [Department of Environment Engineering, Sun Moon University, 100, Kalsan-ri, Tangjeong-myeon, Asan, Chungnam 336-708 (Korea, Republic of)

    2011-03-15

    Low or zero thermal expansion porous ceramics are required for several applications. In this work near zero thermal expansion porous ceramics were fabricated by using SiC and ZrW{sub 2}O{sub 8} as positive and negative thermal expansion materials, respectively, bonded by soda lime glass. The mixture of SiC, ZrW{sub 2}O{sub 8} and soda lime glass was sintered by Pulsed Electric Current Sintering (PECS, or sometimes called Spark Plasma Sintering, SPS) at 700 deg. C. Sintered samples with ZrW{sub 2}O{sub 8} particle size smaller than 25 {mu}m have high thermal expansion coefficient, because ZrW{sub 2}O{sub 8} has the reaction with soda lime glass to form Na{sub 2}ZrW{sub 3}O{sub 12} during sintering process. The reaction between soda lime glass and ZrW{sub 2}O{sub 8} is reduced by increasing particle size of ZrW{sub 2}O{sub 8}. Sintered sample with ZrW{sub 2}O{sub 8} particle size 45-90 {mu}m shows near zero thermal expansion.

  20. Isothermal section of the Er-Cu-Ga ternary system at 973 K

    Energy Technology Data Exchange (ETDEWEB)

    Belgacem, B. [Unite de Recherche de Chimie des Materiaux et de l' Environnement (UR11ES25), ISSBAT, Universite de Tunis ElManar, 9 Avenue Dr. Zoheir Safi, 1006 Tunis (Tunisia); Pasturel, M., E-mail: mathieu.pasturel@univ-rennes1.fr [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Materiaux, UMR CNRS 6226, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes (France); Tougait, O. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Materiaux, UMR CNRS 6226, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes (France); Nouri, S. [Unite de Recherche de Chimie des Materiaux et de l' Environnement (UR11ES25), ISSBAT, Universite de Tunis ElManar, 9 Avenue Dr. Zoheir Safi, 1006 Tunis (Tunisia); Bekkachi, H. El; Peron, I. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Materiaux, UMR CNRS 6226, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes (France); Hassen, R. Ben [Unite de Recherche de Chimie des Materiaux et de l' Environnement (UR11ES25), ISSBAT, Universite de Tunis ElManar, 9 Avenue Dr. Zoheir Safi, 1006 Tunis (Tunisia); Noeel, H. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Materiaux, UMR CNRS 6226, Universite de Rennes 1, Campus de Beaulieu, 35042 Rennes (France)

    2012-08-05

    Highlights: Black-Right-Pointing-Pointer The isothermal section at 973 K of the Er-Cu-Ga ternary phase diagram has been established for the first time. Black-Right-Pointing-Pointer Eight extensions of binary compounds in the ternary domain have been identified, as well as six ternary intermediate solid solutions characterized by an important Cu/Ga mutual substitution. Black-Right-Pointing-Pointer Magnetic properties of Er{sub 3}(Cu,Ga){sub 11} are reported for the first time and confirms the paramagnetic Curie-Weiss behavior of all the six intermediate intermetallics. - Abstract: Phase relations in the Er-Cu-Ga ternary system have been established at 973 K by means of powder X-ray diffraction complemented by energy dispersive spectroscopy coupled to scanning electron microscopy. The isothermal section of the phase diagram comprises eight extensions of binaries into the ternary system, ErCu{sub 1-x}Ga{sub x} (x {<=} 0.5), ErCu{sub 2-x}Ga{sub x} (x {<=} 1.1), ErCu{sub 5-x}Ga{sub x} (x {<=} 0.5), Er{sub 5}Cu{sub x}Ga{sub 3-x} (x {<=} 0.60), Er{sub 3}Cu{sub x}Ga{sub 2-x} (x {<=} 0.24), ErCu{sub x}Ga{sub 1-x} (x {<=} 0.10), ErCu{sub x}Ga{sub 2-x} (x {<=} 0.30) and ErCu{sub x}Ga{sub 3-x} (x {<=} 0.35), as well as six ternary intermediate phases, ErCu{sub x}Ga{sub 2-x} (0.4 {<=} x {<=} 0.7), Er{sub 14}Cu{sub 51-x}Ga{sub x} (5.5 {<=} x {<=} 11.0), ErCu{sub 5-x}Ga{sub x} (0.8 {<=} x {<=} 2.3), Er{sub 2}Cu{sub 17-x}Ga{sub x} (4.9 {<=} x {<=} 8.0), ErCu{sub 12-x}Ga{sub x} (5.7 {<=} x {<=} 6.7) and Er{sub 3}Cu{sub x}Ga{sub 11-x} (1.5 {<=} x {<=} 4.4), all deriving from binary structure-types.

  1. Modeling of H- surface conversion sources; binary (H-Ba) and ternary (H-Cs/W) converter arrangements

    International Nuclear Information System (INIS)

    van Os, C.F.A.; Kunkel, W.B.; Leguijt, C.; Los, J.

    1991-01-01

    The production process for the formation of H - ions in a surface conversion source is sputtering of hydrogen atoms from the converter surface layers by incident positive ions, followed by electron attachment via resonant charge exchange with the converter surface. The sputtering process is in direct relation to the converter surface composition. New experimental data led us to identify two different classes of converters: metallic converters, like solid barium(binary) and adlayer converters, like cesium on tungsten (ternary). For a binary converter the hydrogen in the surface layers is directly sputtered by the incoming ions. Consequently, the negative ion yield scales with the hydrogen concentration in the surface layers. In the cesium/tungsten system (ternary) the hydrogen at the surface is believed to be sandwiched between the cesium adlayer and the tungsten surface. Hence, the negative ion yield scales with the sputter coefficient of hydrogen on adsorbed cesium. This is experimentally confirmed

  2. The Interface Influence in TiN/SiN x Multilayer Nanocomposite Under Irradiation

    Science.gov (United States)

    Uglov, V. V.; Safronov, I. V.; Kvasov, N. T.; Remnev, G. E.; Shimanski, V. I.

    2018-01-01

    The paper focuses on studying the kinetics of radiation-induced point defects formed in TiN/SiN x multilayer nanocomposites with account of their generation, diffusion recombination, and the influence of sinks functioning as interfaces. In order to describe the kinetics in nanocrystalline TiN and amorphous SiN x phases, a finite-difference method is used to solve the system of balance kinetic equations for absolute defect concentrations depending on the spatiotemporal variables. A model of the disclination-dislocation interface structure is used to study the absorption of radiation-induced point defects on the boundaries in created stress fields. It is shown that the interface effectively absorbs point defects in these phases of TiN/SiN x multilayer nanocomposite, thereby reducing their amount within the space between phases. This behavior of point defects partially explains a mechanism of the radiation resistance in this type of nanocomposites.

  3. Improved thermal stability and oxidation resistance of Al–Ti–N coating by Si addition

    International Nuclear Information System (INIS)

    Chen, Li; Yang, Bing; Xu, Yuxiang; Pei, Fei; Zhou, Liangcai; Du, Yong

    2014-01-01

    Addition of Si is very effective in upgrading the machining performance and thermal properties of Al–Ti–N coating. Here, we concentrate on the thermal stability and oxidation resistance of Al–Ti–Si–N coating. Alloying with Si favors the growth of wurtzite phase, and thereby causes a drop in hardness from ∼ 34.5 to 28.7 GPa. However, Si-containing coating retards the formation of w-AlN during thermal annealing, and thereby behaves a high hardness value of ∼ 31.3 GPa after annealing at T a = 1100 °C. After 10 h exposure in air at 850 °C, Al–Ti–N coating is fully oxidized. Incorporation of Si significantly improves the oxidation resistance of Al–Ti–N due to the combined effects with the promoted formation of Al-oxide rich top-scale and retarded transformation of anatase (a-) TiO 2 into rutile (r-) TiO 2 , where only ∼ 1.43 μm oxide scale is shown after oxidation at 1100 °C for 15 h. Noticeable is that the worst oxidation resistance of Al–Ti–Si–N coating in the temperature range from 800 to 1100 °C is obtained at 950 °C with oxide scale of ∼ 1.76 μm due to the fast formation of r-TiO 2 . Additionally, a pre-oxidation at 1000 °C has a positive effect on the oxidation resistance of Al–Ti–Si–N coating, which is attributed to the formation of Al-oxide rich top-scale, and thus inhibits the outward diffusion of metal atoms and inward diffusion of O. - Highlights: • Si as a substitutional solid solution and via the formation of a-Si 3 N 4 coexists. • Si addition favors the growth of wurtzite phase and causes a decreased hardness. • Alloying with Si improves the oxidation resistance of AlTiN. • AlTiSiN behaves the worst oxidation resistance at 950 °C from 800 to 1100 °C. • A pre-oxidation at 1000 °C improves the oxidation resistance of AlTiSiN coating

  4. Surface tension of decane binary and ternary mixtures with eicosane, docosane, and tetracosane

    DEFF Research Database (Denmark)

    Queimada, Antonio; Cao, A.I.; Marrucho, I.M.

    2005-01-01

    -C24H50 and the ternary n-C10H22 + n-C20H42 + n-C24H50 were measured from 293.15 K (or above the solution melting temperature) up to 343.15 K. An average absolute deviation of 1.3% was obtained in comparison with pure component literature data. No mixture information for the reported systems was found......A tensiometer operating on the Wilhelmy plate method was employed to measure liquid-vapor interfacial tensions of three binary mixtures and one ternary mixture of decane with eicosane, docosane, and tetracosane. Tensions of binary mixtures n-C10H22 + n-C20H42, n-C10H22 + n-C22H46, and n-C10H22 + n...

  5. Efecto del dopado con Si sobre la estructura de defectos en sistemas heteroepitaxiales GaN/AlN/Si(111

    Directory of Open Access Journals (Sweden)

    Sánchez, A. M.

    2000-08-01

    Full Text Available The Si doping effect on the defect structure in GaN epilayers grown by molecular beam epitaxy on Si(111 substrates using AlN buffer layers has been studied. Transmission electron microscopy and related techniques have been used to carry out the structural characterization. The Si doping affects both the subgrain size and misorientation in GaN epilayer mosaic structure. The Si doping also leads to an increase of the planar defect density, as well as a decrease of the threading dislocation density. The enlargement of the subgrain tilt and the planar defect density explain the reduction of the dislocation density reaching the GaN free surface.

    En el presente artículo se lleva a cabo el análisis del efecto que el dopado con Si tiene sobre la estructura de defectos en epicapas de GaN crecidas por epitaxia de haces moleculares sobre sustratos de Si (111 utilizando capas amortiguadoras de AlN. La caracterización estructural se llevó a cabo mediante microscopía electrónica de transmisión convencional y de alta resolución. El dopado con Si afecta a la desorientación y tamaño de los subgranos que constituyen la estructura mosaico de la epicapa de GaN. El dopado con Si provoca un aumento en la densidad de defectos planares, así como una disminución en la densidad de dislocaciones de propagación. El incremento en el grado de desorientación de inclinación, así como en la densidad de defectos planares que se produce conforme aumenta el dopado con Si explican la disminución en la densidad de dislocaciones que alcanzan la superficie libre de GaN.

  6. Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)

    Energy Technology Data Exchange (ETDEWEB)

    Mohamad, Ranim; Chen, Jun; Ruterana, Pierre [CIMAP, UMR 6252, CNRS-ENSICAEN-CEA-UNICAEN, Caen (France); Bere, Antoine [Laboratoire de Physique et de Chimie de l' Environnement, Universite Ouaga I Pr Joseph KI-ZERBO, Ouagadougou (Burkina Faso)

    2017-09-15

    In this work, we used a modified Stillinger-Weber potential and a methodology of free energy calculation based on numerical computation of the configuration partition function of an alloy, to make a comprehensive study of the properties of group-III nitride ternary compounds (In{sub x}Ga{sub 1-x}N; In{sub x}Al{sub 1-x}N; Al{sub x}Ga{sub 1-x}N). The wurtzite structure was used; and the critical temperatures for the random ternary alloys are determined as 2717 K for In{sub x}Al{sub 1-x}N, 1718 K for In{sub x}Ga{sub 1-x}N, and 177 K for Al{sub x}Ga{sub 1-x}N, respectively. Therefore, Al{sub x}Ga{sub 1-x}N has no unstable mixing region at typical growth temperatures around 1100 C. In contrast, In{sub x}Al{sub 1-x}N and In{sub x}Ga{sub 1-x}N exhibit a wide unstable region, which means that being thick layers, their stability as homogeneous alloys is probably limited. In agreement with other reports, it is also pointed out that the critical temperature T{sub c} may be decreased when the layers are grown under strain. Although the compression and extension have the same effect below 1.5% strain, it is shown, for the first time, that when the compressive strain goes beyond, T{sub c} abruptly increases in contrast to the case of tensile strain where it continues to decrease. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers; Las tensiones residuales y las propiedades mecánicas de compuestos multicapa de Si3N4/SiC con diferentes capas de SiC

    Energy Technology Data Exchange (ETDEWEB)

    Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

    2017-11-01

    The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [Spanish] Se ha investigado el efecto de las tensiones residuales en la resistencia, dureza y trabajo de fractura de los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC. Puede ser una manera eficaz de diseñar y optimizar las propiedades mecánicas de los compuestos multicapa de Si3N4/SiC mediante el control de las propiedades de las capas de SiC. Los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC se fabricaron por medio de colado en cinta en medio acuoso y sinterización sin presión. Las tensiones residuales se calcularon mediante el uso de la simulación ANSYS, los valores máximos de las fuerzas de tracción y compresión fueron 553,2 MPa y −552,1 MPa, respectivamente. Se observó una fractura escalonada a partir de las superficies de fractura. La fracción de capas de deslaminación aumenta con la tensión residual, lo que puede mejorar la fiabilidad de los materiales. La fuerza de tracción residual era beneficiosa para la mejora de la dureza y el trabajo de fractura, pero la resistencia de los compuestos disminuyó.

  8. Density functional study of CaN monolayer on Si(001)

    Energy Technology Data Exchange (ETDEWEB)

    Saati asr, Maryam; Zahedifar, Maedeh; Hashemifar, S. Javad; Akbarzadeh, Hadi

    2016-01-01

    In this work, the first-principles computations are performed to study the structural and magnetic properties of CaN/Si(001) interface. Bulk CaN in the zinc-blende (ZB) structure is argued to be an ionic magnetic compound with a total spin moment of 1 μ{sub B} per formula unit, originated from the p electrons of N ions. Various interface configurations of a ZB CaN monolayer on Si (001) surface are investigated and the lowest energy and the highest spin polarized interfaces are extracted. Then the minimum energy path between the lowest energy and the highest spin polarized interfaces are calculated by using the nudged elastic band method and it is argued that both these systems are unstable toward a nonmagnetic interface with a rock–salt arrangement of Ca and N atoms. - Highlights: • Ab-initio studies are done on various structures of CaN monolayer on Si (001). • The lowest energy system was found to be the N-top configuration interface, while the highest spin polarization was observed in the Ca-hollow termination. • Both Ca-hollow and N-top are unstable toward a nonmagnetic rock–salt CaN monolayer on silicon surface. • Realization of a magnetic CaN/Si (001) interface likely requires some buffer layer on silicon surface, prior to the thin film deposition.

  9. Density functional study of CaN monolayer on Si(001)

    International Nuclear Information System (INIS)

    Saati asr, Maryam; Zahedifar, Maedeh; Hashemifar, S. Javad; Akbarzadeh, Hadi

    2016-01-01

    In this work, the first-principles computations are performed to study the structural and magnetic properties of CaN/Si(001) interface. Bulk CaN in the zinc-blende (ZB) structure is argued to be an ionic magnetic compound with a total spin moment of 1 μ_B per formula unit, originated from the p electrons of N ions. Various interface configurations of a ZB CaN monolayer on Si (001) surface are investigated and the lowest energy and the highest spin polarized interfaces are extracted. Then the minimum energy path between the lowest energy and the highest spin polarized interfaces are calculated by using the nudged elastic band method and it is argued that both these systems are unstable toward a nonmagnetic interface with a rock–salt arrangement of Ca and N atoms. - Highlights: • Ab-initio studies are done on various structures of CaN monolayer on Si (001). • The lowest energy system was found to be the N-top configuration interface, while the highest spin polarization was observed in the Ca-hollow termination. • Both Ca-hollow and N-top are unstable toward a nonmagnetic rock–salt CaN monolayer on silicon surface. • Realization of a magnetic CaN/Si (001) interface likely requires some buffer layer on silicon surface, prior to the thin film deposition.

  10. Enhanced visible light-driven photocatalytic performance of ZnO–g-C_3N_4 coupled with graphene oxide as a novel ternary nanocomposite

    International Nuclear Information System (INIS)

    Jo, Wan-Kuen; Clament Sagaya Selvam, N.

    2015-01-01

    Highlights: • Prepared novel ternary nanocomposite consisting of ZnO, g-C_3N_4, and graphene oxide. • ZnO nanospheres disperse evenly and embed on porous g-C_3N_4-coupled graphene oxide. • Heterojunction of ternary composite account for the enhanced photocatalytic activity. - Abstract: This article reports a novel ternary nanocomposite consisting of ZnO, g-C_3N_4, and graphene oxide (GO) that provides enhanced photocatalytic performance and stability. The ZnO nanospheres disperse evenly and embed themselves in the porous g-C_3N_4. Composites with various g-C_3N_4 and GO to ZnO weight ratios were synthesized and characterized systematically. The results indicated that the absorption of binary g-C_3N_4/ZnO nanocomposites shifted to a lower energy compared to pure ZnO in a fashion consistent with the loading content of g-C_3N_4. Notably, the loading content of GO in the ZnO–g-C_3N_4 composite resulted in increased absorption in the visible range and improved charge separation efficiency, thereby drastically improving photocatalytic activity. Successful hybridization of ternary nanocomposite was confirmed by drastic quenching of fluorescence and broader visible light absorption. The optimal content of g-C_3N_4 in the ZnO–g-C_3N_4 composite was 50%, which exhibited the effective hybridization between ZnO and g-C_3N_4, and high photocatalytic efficiency. However, the photocatalytic degradation of the ternary nanocomposite showed performance that was two times greater than ZnO–g-C_3N_4, exhibiting 99.5% degradation efficiency after just 15 min of light irradiation. The combined heterojunction and synergistic effects of this composite account for the improved photocatalytic activity.

  11. Novel ternary g-C3N4/Ag3VO4/AgBr nanocomposites with excellent visible-light-driven photocatalytic performance for environmental applications

    Science.gov (United States)

    Barzegar, Javid; Habibi-Yangjeh, Aziz; Akhundi, Anise; Vadivel, S.

    2018-04-01

    Novel visible-light-induced photocatalysts were fabricated by integration of Ag3VO4 and AgBr semiconductors with graphitic carbon nitride (g-C3N4) through a facile refluxing method. The fabricated photocatalysts were extensively characterized by XRD, EDX, SEM, TEM, FT-IR, UV-vis DRS, BET, TGA, and PL instruments. The photocatalytic performance of these samples was studied by degradations of three dye contaminants under visible-light exposure. Among the ternary photocatalysts, the g-C3N4/Ag3VO4/AgBr (10%) nanocomposite displayed the maximum activity for RhB degradation with rate constant of 1366.6 × 10-4 min-1, which is 116, 7.23, and 38.5 times as high as those of the g-C3N4, g-C3N4/AgBr (10%), and g-C3N4/Ag3VO4 (30%) photocatalysts, respectively. The effects of synthesis time and calcination temperature were also investigated and discussed. Furthermore, according to the trapping experiments, it was found that superoxide anion radicals were the predominant reactive species in this system. Finally, the ternary photocatalyst displayed superlative activity in removal of the contaminants under visible-light exposure, displaying great potential of this ternary photocatalyst for environmental remediation, because of a facile synthesis route and outstanding photocatalytic performance.

  12. An imitative calculation of W/C, Mo/Si articifial multilayered films' structures and properties as X-ray monochromators

    International Nuclear Information System (INIS)

    Liu Wen; Liu Wenhan; Wu Ziqin

    1989-01-01

    An imitative calculation on W/C and Mo/Si artificial multilayered films have been made. The influences of total period numbers and deviation of period thickness on X-ray diffraction peak were given. Two difference diviations, random fluctuation and system linear deviation have been imitated, their influences on X-ray energy distinguish power have been compared

  13. Self-assembled patches in PtSi/n-Si (111) diodes

    Science.gov (United States)

    Afandiyeva, I. M.; Altιndal, Ş.; Abdullayeva, L. K.; Bayramova, A. İ.

    2018-05-01

    Using the effect of the temperature on the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of PtSi/n-Si (111) Schottky diodes the profile of apparent doping concentration (N Dapp), the potential difference between the Fermi energy level and the bottom of the conduction band (V n), apparent barrier height (Φ Bapp), series resistance (R s) and the interface state density N ss have been investigated. From the temperature dependence of (C–V) it was found that these parameters are non-uniformly changed with increasing temperature in a wide temperature range of 79–360 K. The voltage and temperature dependences of apparent carrier distribution we attributed to the existence of self-assembled patches similar the quantum wells, which formed due to the process of PtSi formation on semiconductor and the presence of hexagonal voids of Si (111).

  14. Facilitated charge transport in ternary interconnected electrodes for flexible supercapacitors with excellent power characteristics

    Science.gov (United States)

    Chen, Wanjun; He, Yongmin; Li, Xiaodong; Zhou, Jinyuan; Zhang, Zhenxing; Zhao, Changhui; Gong, Chengshi; Li, Shuankui; Pan, Xiaojun; Xie, Erqing

    2013-11-01

    Flexible and high performance supercapacitors are very critical in modern society. In order to develop the flexible supercapacitors with high power density, free-standing and flexible three-dimensional graphene/carbon nanotubes/MnO2 (3DG/CNTs/MnO2) composite electrodes with interconnected ternary 3D structures were fabricated, and the fast electron and ion transport channels were effectively constructed in the rationally designed electrodes. Consequently, the obtained 3DG/CNTs/MnO2 composite electrodes exhibit superior specific capacitance and rate capability compared to 3DG/MnO2 electrodes. Furthermore, the 3DG/CNTs/MnO2 based asymmetric supercapacitor demonstrates the maximum energy and power densities of 33.71 W h kg-1 and up to 22 727.3 W kg-1, respectively. Moreover, the asymmetric supercapacitor exhibits excellent cycling stability with 95.3% of the specific capacitance maintained after 1000 cycle tests. Our proposed synthesis strategy to construct the novel ternary 3D structured electrodes can be efficiently applied to other high performance energy storage/conversion systems.Flexible and high performance supercapacitors are very critical in modern society. In order to develop the flexible supercapacitors with high power density, free-standing and flexible three-dimensional graphene/carbon nanotubes/MnO2 (3DG/CNTs/MnO2) composite electrodes with interconnected ternary 3D structures were fabricated, and the fast electron and ion transport channels were effectively constructed in the rationally designed electrodes. Consequently, the obtained 3DG/CNTs/MnO2 composite electrodes exhibit superior specific capacitance and rate capability compared to 3DG/MnO2 electrodes. Furthermore, the 3DG/CNTs/MnO2 based asymmetric supercapacitor demonstrates the maximum energy and power densities of 33.71 W h kg-1 and up to 22 727.3 W kg-1, respectively. Moreover, the asymmetric supercapacitor exhibits excellent cycling stability with 95.3% of the specific capacitance maintained

  15. Microstructure and Properties of Porous Si3N4/Dense Si3N4 Joints Bonded Using RE–Si–Al–O–N (RE = Y or Yb Glasses

    Directory of Open Access Journals (Sweden)

    Ling Li

    2017-11-01

    Full Text Available The joining of porous Si3N4 to dense Si3N4 ceramics has been successfully performed using mixed RE2O3 (RE = Y or Yb, Al2O3, SiO2, and α-Si3N4 powders. The results suggested that the α-Si3N4 powders partly transformed into β-SiAlON and partly dissolved into oxide glass to form oxynitride glass. Thus, composites of glass/β-SiAlON-ceramic formed in the seam of joints. Due to the capillary action of the porous Si3N4 ceramic, the molten glass solder infiltrated into the porous Si3N4 ceramic side during the joining process and formed the “infiltration zone” with a thickness of about 400 μm, which contributed to the heterogeneous distribution of the RE–Si–Al–O–N glasses in the porous Si3N4 substrate. In-situ formation of β-SiAlON in the seam resulted in a high bonding strength. The maximum bending strength of 103 MPa and 88 MPa was reached for the porous Si3N4/dense Si3N4 joints using Y–Si–Al–O–N and Yb–Si–Al–O–N glass solders, respectively.

  16. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Rongsheng, E-mail: rschen@ust.hk; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-08-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm{sup 2}/Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10{sup 6}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress.

  17. C-H and C-C activation of n -butane with zirconium hydrides supported on SBA15 containing N-donor ligands: [(≡SiNH-)(≡SiX-)ZrH2], [(≡SiNH-)(≡SiX-)2ZrH], and[(≡SiN=)(≡SiX-)ZrH] (X = -NH-, -O-). A DFT study

    KAUST Repository

    Pasha, Farhan Ahmad

    2014-07-01

    Density functional theory (DFT) was used to elucidate the mechanism of n-butane hydrogenolysis (into propane, ethane, and methane) on well-defined zirconium hydrides supported on SBA15 coordinated to the surface via N-donor surface pincer ligands: [(≡SiNH-)(≡SiO-)ZrH2] (A), [(≡SiNH-)2ZrH2] (B), [(≡SiNH-)(≡SiO-) 2ZrH] (C), [(≡SiNH-)2(≡SiO-)ZrH] (D), [(≡SiN=)(≡Si-O-)ZrH] (E), and [(≡SiN=)(≡SiNH-)ZrH] (F). The roles of these hydrides have been investigated in C-H/C-C bond activation and cleavage. The dihydride A linked via a chelating [N,O] surface ligand was found to be more active than B, linked to the chelating [N,N] surface ligand. Moreover, the dihydride zirconium complexes are also more active than their corresponding monohydrides C-F. The C-C cleavage step occurs preferentially via β-alkyl transfer, which is the rate-limiting step in the alkane hydrogenolysis. The energetics of the comparative pathways over the potential energy surface diagram (PES) reveals the hydrogenolysis of n-butane into propane and ethane. © 2014 American Chemical Society.

  18. Data and analyses of phase relations in the Ce-Fe-Sb ternary system.

    Science.gov (United States)

    Zhu, Daiman; Xu, Chengliang; Li, Changrong; Guo, Cuiping; Zheng, Raowen; Du, Zhenmin; Li, Junqin

    2018-02-01

    These data and analyses support the research article "Experimental study on phase relations in the Ce-Fe-Sb ternary system" Zhu et al. (2017) [1]. The data and analyses presented here include the experimental results of XRD, SEM and EPMA for the determination of the whole liquidus projection and the isothermal section at 823 K in the Ce-Fe-Sb system. All the results enable the understanding of the constituent phases and the solidification processes of the as-cast alloys as well as the phase relations and the equilibrium regions at 823 K in the Ce-Fe-Sb ternary system over the entire composition.

  19. Thermodynamic study of sodium-iron oxides. Part 2. Ternary phase diagram of the Na-Fe-O system

    International Nuclear Information System (INIS)

    Huang, Jintao; Furukawa, Tomohiro; Aoto, Kazumi

    2003-01-01

    Studies on ternary phase diagrams of the Na-Fe-O system have been carried out from the thermodynamic point of view. Thermodynamic data of main ternary Na-Fe oxides Na 4 FeO 3 (s), Na 3 FeO 3 (s), Na 5 FeO 4 (s) and Na 8 Fe 2 O 7 (s) have been assessed. A user database has been created by reviewing literature data together with recent DSC and vapor pressure measurements by the present authors. New ternary phase diagrams of the Na-Fe-O system have been constructed from room temperature to 1000K. Stable conditions of the ternary oxides at 800K were presented in predominance diagram as functions of oxygen pressure and sodium pressure

  20. Pseudo-ternary phase diagram in the Na2O-Na2O2-NaOH system

    International Nuclear Information System (INIS)

    Saito, Jun-ichi; Tendo, Masayuki; Aoto, Kazumi

    1997-10-01

    Generally, the phase diagrams are always used to understand the present state of compounds at certain temperature. In order to understand the corrosion behavior of structural material for FBR by main sodium compounds (Na 2 O, Na 2 O 2 and NaOH), it is very important to comprehend the phase diagrams of their compounds. However, only Na 2 O-NaOH pseudo-binary phase diagram had been investigated previously in this system. There is no study of other pseudo-binary or ternary phase diagrams in the Na 2 O-Na 2 O 2 -NaOH system. In this study, in order to clarify the present states of their compounds at certain temperatures, the pseudo-binary and ternary phase diagrams in the Na 2 O-Na 2 O 2 -NaOH system were prepared. A series of thermal analyses with binary and ternary component system has been carried out using the differential scanning calorimetry (DSC). The liquidus temperature and ternary eutectic temperatures were confirmed by these measurements. The beneficial indications for constructing phase diagrams were obtained from these experiments. On the basis of these results, the interaction parameters between compounds which were utilized for the Thermo-Calc calculation were optimized. Thermo-Calc is one of thermodynamic calculation software. Consequently the accurate pseudo-binary and ternary phase diagrams were indicated using the optimized parameters. (author)

  1. Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

    Science.gov (United States)

    Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

    2016-06-09

    We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.

  2. Alternative solution model for the ternary carbonate system CaCO3 - MgCO3 - FeCO3 - I. A ternary Bragg-Williams ordering model

    Science.gov (United States)

    McSwiggen, P.L.

    1993-01-01

    The minerals of the ternary carbonate system CaCO3 - MgCO3 - FeCO3 represent a complex series of solid solutions and ordering states. An understanding of those complexities requires a solution model that can both duplicate the subsolidus phase relationships and generate correct values for the activities. Such a solution model must account for the changes in the total energy of the system resulting from a change in the ordering state of the individual constituents. Various ordering models have been applied to binary carbonate systems, but no attempts have previously been made to model the ordering in the ternary system. This study derives a new set of equations that allow for the equilibrium degree of order to be calculated for a system involving three cations mixing on two sites, as in the case of the ternary carbonates. The method is based on the Bragg-Williams approach. From the degree of order, the mole fractions of the three cations in each of the two sites can be determined. Once the site occupancies have been established, a Margules-type mixing model can be used to determine the free energy of mixing in the solid solution and therefore the activities of the various components. ?? 1993 Springer-Verlag.

  3. Tuning of "antenna effect" of Eu(III) in ternary systems in aqueous medium through binding with protein.

    Science.gov (United States)

    Ghorai, Shyamal Kr; Samanta, Swarna Kamal; Mukherjee, Manini; Saha Sardar, Pinki; Ghosh, Sanjib

    2013-02-04

    A simple ternary system containing a protein [human serum albumin (HSA)/bovine serum albumin (BSA)], tetracycline hydrochloride (TC), and Eu(III) in suitable aqueous buffer medium at physiological pH (= 7.2) has been shown to exhibit highly efficient "antenna effect" compared to the binary complex of TC with Eu(III) (Eu(3)TC). The ternary system containing E. coli alkaline phosphatase (AP), TC, and Eu(III), however, shows a slight enhancement of Eu(III) emission, although the binding constant of AP with TC is 2 orders of magnitude greater than with BSA/HSA. The enhanced emission of bound TC in the binary systems containing proteins and TC gets quenched in the ternary systems containing HSA/BSA, showing the efficient energy transfer (ET) from TC to Eu(III). Steady state and time-resolved emission studies of each component in all the ternary systems in H(2)O and in D(2)O medium reveal that Eu(III) is very well protected from the O-H oscillator in the ternary system containing HSA/BSA compared to that containing AP. The docking studies locating the binding site of TC in the proteins suggest that TC binds near the surface of AP. In the case of HSA/BSA, TC resides in the interior of the protein resulting in a large shielding effect of Eu(III). The rotational correlation time (θ(c)) determined from the anisotropy decay of bound TC in the complexes and the accessible surface area (ASA) of the ligand in the complexes obtained from the docking studies also support the contention that Eu(3)TC is more exposed to solvent in the case of the ternary system consisting of AP, TC, and Eu(III). The calculated radiative lifetime and the sensitization efficiency ratio of Eu(III) in all the systems clearly demonstrate the protein mediated tuning of "antenna effect" in Eu(III).

  4. Ternary superconductors

    International Nuclear Information System (INIS)

    Giorgi, A.L.

    1987-01-01

    Ternary superconductors constitute a class of superconducting compounds with exceptional properties such as high transition temperatures (≅ 15.2 K), extremely high critical fields (H c2 >60 Tesla), and the coexistence of superconductivity and long-range magnetic order. This has generated great interest in the scientific community and resulted in a large number of experimental and theoretical investigations in which many new ternary compounds have been discovered. A review of some of the properties of these ternary compounds is presented with particular emphasis on the ternary molybdenum chalcogenides and the ternary rare earth transition metal tetraborides. The effect of partial substitution of a second metal atom to form pseudoternary compounds is examined as well as some of the proposed correlations between the superconducting transition temperature and the structural and electronic properties of the ternary superconductors

  5. A simple urea-based route to ternary metal oxynitride nanoparticles

    International Nuclear Information System (INIS)

    Gomathi, A.; Reshma, S.; Rao, C.N.R.

    2009-01-01

    Ternary metal oxynitrides are generally prepared by heating the corresponding metal oxides with ammonia for long durations at high temperatures. In order to find a simple route that avoids use of gaseous ammonia, we have employed urea as the nitriding agent. In this method, ternary metal oxynitrides are obtained by heating the corresponding metal carbonates and transition metal oxides with excess urea. By this route, ternary metal oxynitrides of the formulae MTaO 2 N (M=Ca, Sr or Ba), MNbO 2 N (M=Sr or Ba), LaTiO 2 N and SrMoO 3-x N x have been prepared successfully. The oxynitrides so obtained were generally in the form of nanoparticles, and were characterized by various physical techniques. - Graphical abstract: Nanoparticles of ternary metal oxynitrides can be synthesized by means of urea route. Given is the TEM image of the nanoparticles of CaTaO 2 N so obtained and the insets show the SAED pattern and HREM image of the nanoparticles

  6. Effects of a Thin Ru-Doped PVP Interface Layer on Electrical Behavior of Ag/n-Si Structures

    Science.gov (United States)

    Badali, Yosef; Nikravan, Afsoun; Altındal, Şemsettin; Uslu, İbrahim

    2018-03-01

    The aim of this study is to improve the electrical property of Ag/n-Si metal-semiconductor (MS) structure by growing an Ru-doped PVP interlayer between Ag and n-Si using electrospinning technique. To illustrate the utility of the Ru-doped PVP interface layer, current-voltage (I-V) characteristics of Ag/n-Si (MS) and Ag/Ru-doped PVP/n-Si metal-polymer-semiconductor (MPS) structures was carried out. In addition, the main electrical parameters of the fabricated Ag/Ru-doped PVP/n-Si structures were investigated as a function of frequency and electric field using impedance spectroscopy method (ISM). The capacitance-voltage (C-V) plot showed an anomalous peak in the depletion region due to the special density distribution of interface traps/states (D it /N ss) and interlayer. Both the values of series resistance (R s) and N ss were drawn as a function of voltage and frequency between 0.5 kHz and 5 MHz at room temperature and they had a peak behavior in the depletion region. Some important parameters of the sample such as the donor concentration atoms (N D), Fermi energy (E F ), thickness of the depletion region (W D), barrier height (Φ B0 ) and R s were determined from the C -2 versus V plot for each frequency. The values of N D , W D , Φ B0 and R s were changed from 1 × 1015 cm-3, 9.61 × 10-5 cm, 0.94 eV and 19,055 Ω (at 0.5 kHz) to 0.13 × 1015 cm-3, 27.4 × 10-4 cm, 1.04 eV and 70 Ω (at 5 MHz), respectively. As a result of the experiments, it is observed that the change in electrical parameters becomes more effective at lower frequencies due to the N ss and their relaxation time (τ), dipole and surface polarizations.

  7. C-H and C-C activation of n -butane with zirconium hydrides supported on SBA15 containing N-donor ligands: [(≡SiNH-)(≡SiX-)ZrH2], [(≡SiNH-)(≡SiX-)2ZrH], and[(≡SiN=)(≡SiX-)ZrH] (X = -NH-, -O-). A DFT study

    KAUST Repository

    Pasha, Farhan Ahmad; Bendjeriou-Sedjerari, Anissa; Huang, Kuo-Wei; Basset, Jean-Marie

    2014-01-01

    : [(≡SiNH-)(≡SiO-)ZrH2] (A), [(≡SiNH-)2ZrH2] (B), [(≡SiNH-)(≡SiO-) 2ZrH] (C), [(≡SiNH-)2(≡SiO-)ZrH] (D), [(≡SiN=)(≡Si-O-)ZrH] (E), and [(≡SiN=)(≡SiNH-)ZrH] (F). The roles of these hydrides have been investigated in C-H/C-C bond activation and cleavage

  8. UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H

    Directory of Open Access Journals (Sweden)

    Schutz-Kuchly T.

    2014-01-01

    Full Text Available Experimental work on laser induced ablation of thin Al2O3(20 nm/SiN:H (70 nm and a-Si:H (20 nm/SiN:H (70 nm stacks acting, respectively, as p-type and n-type silicon surface passivation layers is reported. Results obtained using two different laser sources are compared. The stacks are efficiently removed using a femtosecond infra-red laser (1030 nm wavelength, 300 fs pulse duration but the underlying silicon surface is highly damaged in a ripple-like pattern. This collateral effect is almost completely avoided using a nanosecond ultra-violet laser (248 nm wavelength, 50 ns pulse duration, however a-Si:H flakes and Al2O3 lace remain after ablation process.

  9. Formation of AlFeSi phase in AlSi12 alloy with Ce addition

    Directory of Open Access Journals (Sweden)

    S. Kores

    2012-04-01

    Full Text Available The influence of cerium addition on the solidification sequence and microstructure constituents of the Al-Si alloys with 12,6 mass % Si was examined. The solidification was analyzed by a simple thermal analysis. The microstructures were examined with conventional light and scanning electron microscopy. Ternary AlSiCe phase was formed in the Al-Si alloys with added cerium during the solidification process. AlSiCe and β-AlFeSi phases solidified together in the region that solidified the last. Cerium addition influenced on the morphology of the α-AlFeSi phase solidification.

  10. Crystallization, data collection and processing of the chymotrypsin–BTCI–trypsin ternary complex

    Energy Technology Data Exchange (ETDEWEB)

    Esteves, Gisele Ferreira; Teles, Rozeni Chagas Lima; Cavalcante, Nayara Silva; Neves, David; Ventura, Manuel Mateus [Laboratório de Biofísica, Instituto de Ciências Biológicas, Universidade de Brasília, 70910-900 Brasília-DF (Brazil); Barbosa, João Alexandre Ribeiro Gonçalves, E-mail: joao@lnls.br [Center for Structural Molecular Biology (CeBiME), Brazilian Synchrotron Light Laboratory (LNLS), CP 6192, 13083-970 Campinas-SP (Brazil); Freitas, Sonia Maria de, E-mail: joao@lnls.br [Laboratório de Biofísica, Instituto de Ciências Biológicas, Universidade de Brasília, 70910-900 Brasília-DF (Brazil)

    2007-12-01

    A ternary complex of the proteinase inhibitor (BTCI) with trypsin and chymotrypsin was crystallized and its crystal structure was solved by molecular replacement. A ternary complex of the black-eyed pea trypsin and chymotrypsin inhibitor (BTCI) with trypsin and chymotrypsin was crystallized by the sitting-drop vapour-diffusion method with 0.1 M HEPES pH 7.5, 10%(w/v) polyethylene glycol 6000 and 5%(v/v) 2-methyl-2,4-pentanediol as precipitant. BTCI is a small protein with 83 amino-acid residues isolated from Vigna unguiculata seeds and is able to inhibit trypsin and chymotrypsin simultaneously by forming a stable ternary complex. X-ray data were collected from a single crystal of the trypsin–BTCI–chymotrypsin ternary complex to 2.7 Å resolution under cryogenic conditions. The structure of the ternary complex was solved by molecular replacement using the crystal structures of the BTCI–trypsin binary complex (PDB code) and chymotrypsin (PDB code) as search models.

  11. Crystallization, data collection and processing of the chymotrypsin–BTCI–trypsin ternary complex

    International Nuclear Information System (INIS)

    Esteves, Gisele Ferreira; Teles, Rozeni Chagas Lima; Cavalcante, Nayara Silva; Neves, David; Ventura, Manuel Mateus; Barbosa, João Alexandre Ribeiro Gonçalves; Freitas, Sonia Maria de

    2007-01-01

    A ternary complex of the proteinase inhibitor (BTCI) with trypsin and chymotrypsin was crystallized and its crystal structure was solved by molecular replacement. A ternary complex of the black-eyed pea trypsin and chymotrypsin inhibitor (BTCI) with trypsin and chymotrypsin was crystallized by the sitting-drop vapour-diffusion method with 0.1 M HEPES pH 7.5, 10%(w/v) polyethylene glycol 6000 and 5%(v/v) 2-methyl-2,4-pentanediol as precipitant. BTCI is a small protein with 83 amino-acid residues isolated from Vigna unguiculata seeds and is able to inhibit trypsin and chymotrypsin simultaneously by forming a stable ternary complex. X-ray data were collected from a single crystal of the trypsin–BTCI–chymotrypsin ternary complex to 2.7 Å resolution under cryogenic conditions. The structure of the ternary complex was solved by molecular replacement using the crystal structures of the BTCI–trypsin binary complex (PDB code) and chymotrypsin (PDB code) as search models

  12. Superconductivity in Ternary Rare-Earth Transition Metal Silicides and Germanides with the SCANDIUM(5) COBALT(4) SILICON(10)-TYPE Structure.

    Science.gov (United States)

    Berg, Linda Sue

    A systematic study of the superconducting and normal state properties of some ternary rare earth transition metal silicides and germanides of the Sc(,5)Co(,4)Si(,10) -type is reported in this work. Low temperature heat capacity measurements indicate the presence of a complicated phonon density of states in these structurally complex compounds. A better description of the phonon spectrum of the high T(,c) materials, Sc(,5)Rh(,4)Si(,10), Sc(,5)Ir(,4)Si(,10), and Y(,5)Os(,4)Ge(,10), given by a model proposed by Junod et al.('1), is presented and discussed. The large values of (DELTA)C/(gamma)(,n)T(,c) and the electron-phonon coupling constant for these high T(,c) compounds indicate that they are strong-coupled superconductors. Relative to other ternary superconductors, many of these materials have large Debye temperatures. The BSC theory does not seem to afford an adequate description of the supercon- ducting state in these compounds. DC electrical resistivity measurements on these compounds show resistivity behaviors deviating from those exhibited by simple metals. The (rho)(T) data for Y(,5)Ir(,4)Si(,10), Lu(,5)Rh(,4)Si(,10), Lu(,5)Ir(,4)Si(,10), and Y(,5)Os(,4)Ge(,10), indicate the presence of anomalies. Static molar magnetic susceptibility measurements performed on these compounds indicate (1) a small effective magnetic moment of 0.26(mu)(,B) on the Co atom and (2) anomalous behaviors in the Lu(,5)Rh(,4)Si(,10), Lu(,5)Ir(,4)Si(,10), Y(,5)Ir(,4)Si(,10), Lu(,5)Ir(,4)Ge(,10), and Y(,5)Rh(,4)Ge(,10) data. It is suggested that the same mechanism, namely, the forma- tion of a charge- or spin-density wave, is causing the anomalous behaviors in both the resistivity and susceptibility data. Lastly, upper critical magnetic field measurements were performed on Sc(,5)Co(,4)Si(,10), Sc(,5)Rh(,4)Si(,10), Sc(,5)Ir(,4)Si(,10), Lu(,5)Rh(,4)Si(,10), Lu(,5)Ir(,4)Si(,10), and Y(,5)Os(,4)Ge(,10). Relative to the other five samples, Y(,5)Os(,4)Ge(,10) exhibits very high values for (-d

  13. Phase diagram study for the PbO-ZnO-CaO-SiO_2 -“Fe_2O_3 ” system in air with CaO/SiO_2 in 1.1 and PbO/(CaO+SiO_2) in 2.4 weight ratios

    International Nuclear Information System (INIS)

    Lopez-Rodriguez, Josue; Romero-Serrano, Antonio; Hernandez-Ramirez, Aurelio; Cruz-Ramirez, Alejandro; Almaguer-Guzman, Isaias; Benavides-Perez, Ricardo; Flores-Favela, Manuel

    2017-01-01

    An experimental study on the phase equilibrium and the liquidus isotherms for the PbO-ZnO-CaO-SiO_2 -“Fe_2O_3 ” system with CaO/SiO_2 in 1.1 and PbO/(CaO+SiO_2) in 2.4 weight ratios, respectively, was carried out in the temperature range 1100-1300 deg C (1373-1573 K). High temperature phases were determined by the equilibrium-quenching method. Results are presented in the form of pseudo-ternary sections “Fe_2O_3 ”-ZnO-(PbO+CaO+SiO_2). X-Ray diffraction (XRD) and SEM-EDS results showed that the phase equilibria in this system are dominated by the high melting temperature spinel and zincite phases. It was observed that if the system is at a temperature below 1300 deg C and the total (Fe_2O_3 + ZnO) is greater than 20 wt%, spinel and/or zincite will be present in the slag system. As an application of the phase diagram, the liquid phase compositions below the liquidus surface were estimated, then their viscosities were calculated using FACTSage software. (author)

  14. InN/GaN short-period superlattices as ordered InGaN ternary alloys

    International Nuclear Information System (INIS)

    Kusakabe, Kazuhide; Imai, Daichi; Wang, Ke; Yoshikawa, Akihiko

    2016-01-01

    Coherent (InN) 1 /(GaN) n short-period superlattices (SPSs) were successfully grown through dynamic atomic layer epitaxy (D-ALEp) mode by RF-plasma molecular beam epitaxy (MBE), where GaN layer thicknesses n were thinned down to 4 monolayer (ML). After this achievement, we demonstrated quasi-ternary InGaN behavior in their photoluminescence (PL) spectra for the first time. It was found interestingly that GaN layer thickness of n = 4 ML was the criterion both for structural control and continuum-band formation. Although highly lattice-mismatched InN/GaN interfaces easily introduce relaxation in (InN) 1 /(GaN) 4 SPSs during growth depending on the dynamic surface stoichiometry condition, this problem was overcome by precise control/removal of fluid-like residual In/Ga metals on the growth front with in-situ monitoring method. The (InN) 1 /(GaN) n SPSs with n ≥ 7 ML showed a constant PL peak energy around 3.2 eV at 12 K, reflecting discrete electron/hole wavefunctions. On the other hand, the (InN) 1 /(GaN) 4 SPSs indicated the red-shifted PL peak at 2.93 eV at 12 K, which was attributed to the continuum-band state with increasing in the overlap of electrons/hole wavefunctions. This result is concluded that the (InN) 1 /(GaN) 4 SPSs can be considered as ordered InGaN alloys. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Thermoelectric properties of ternary phases of thallium-tin-tellurium system

    Energy Technology Data Exchange (ETDEWEB)

    Dichi, E. [Equipe materiaux et sante, faculte de pharmacie, universite Paris XI, 5, rue J.B, EA 401, Clement 92296 Chatenay-Malabry (France)], E-mail: emma.dichi@cep.u-psud.fr; Sghaier, M. [Equipe materiaux et sante, faculte de pharmacie, universite Paris XI, 5, rue J.B, EA 401, Clement 92296 Chatenay-Malabry (France); Kra, G. [Laboratoire de chimie minerale, universite de Cocody, 22, BP 582, Abidjan 22, Cote d' Ivoire (France)

    2008-06-30

    In this paper, we present the measurements of conductivity and of thermoelectric power. Measurements were taken for the temperature range of 100-330 K for the three ternary phases of Tl-Sn-Te system. The potential of these compounds as thermoelectric materials was studied.

  16. Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

    Science.gov (United States)

    Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

    2017-09-01

    Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

  17. Facile Oxidative Desulfurisation of Benzothiophene Using Polyoxometalate H4[α-SiW12O40]/Zr Catalyst

    OpenAIRE

    Aldes Lesbani; A. Agnes; Randi O. Saragih; Mariska Verawaty; Risfidian Mohadi; Hilda Zulkifli

    2015-01-01

    A highly active catalyst H4[α-SiW12O40]/Zr based polyoxometalete Keggin type was prepared by wet impregnation method and was characterized by FTIR spectroscopy, X-ray diffractometer, surface textural property by SEM, and analysis of porosity by BET method. H4[α-SiW12O40]/Zr was successfully synthesized and showed uniform properties with block solid structure which was applied as heterogeneous stable catalyst for oxidative desulfurization of benzothiophene under simple and mild condition using...

  18. Validated thermodynamic prediction of AlP and eutectic (Si) solidification sequence in Al-Si cast alloys

    International Nuclear Information System (INIS)

    Liang, S M; Schmid-Fetzer, R

    2016-01-01

    The eutectic microstructure in hypoeutectic Al-Si cast alloys is strongly influenced by AlP particles which are potent nuclei for the eutectic (Si) phase. The solidification sequence of AlP and (Si) phases is, thus, crucial for the nucleation of eutectic silicon with marked impact on its morphology. This study presents this interdependence between Si- and P-compositions, relevant for Al-Si cast alloys, on the solidification sequence of AlP and (Si). These data are predicted from a series of thermodynamic calculations. The predictions are based on a self-consistent thermodynamic description of the Al-Si-P ternary alloy system developed recently. They are validated by independent experimental studies on microstructure and undercooling in hypoeutectic Al-Si alloys. A constrained Scheil solidification simulation technique is applied to predict the undercooling under clean heterogeneous nucleation conditions, validated by dedicated experimental observations on entrained droplets. These specific undercooling values may be very large and their quantitative dependence on Si and P content of the Al alloy is presented. (paper)

  19. First-principles quantum molecular calculations of structural and mechanical properties of TiN/SiN{sub x} heterostructures, and the achievable hardness of the nc-TiN/SiN{sub x} nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Ivashchenko, V.I., E-mail: ivash@ipms.kiev.ua [Institute of Problems of Material Science, National Academy of Science of Ukraine, Krzhyzhanosky Str. 3, 03142 Kyiv (Ukraine); Veprek, S., E-mail: stan.veprek@lrz.tum.de [Department of Chemistry, Technical University Munich, Lichtenbergstrasse 4, D-85747 Garching (Germany); Argon, A.S. [Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States); Turchi, P.E.A. [Lawrence Livermore National Laboratory (L-352), P.O. Box 808, Livermore, CA 94551 (United States); Gorb, L. [Badger Technical Services, LLC, Vicksburg, MS 39180 (United States); U.S. Army ERDC, Vicksburg, MS 39180 (United States); Hill, F. [U.S. Army ERDC, Vicksburg, MS 39180 (United States); Leszczynski, J. [Department of Chemistry and Biochemistry, Interdisciplinary Center for Nanotoxicity, Jackson State University, Jackson, MS 39217 (United States)

    2015-03-02

    TiN/SiN{sub x} heterostructures with one monolayer of the interfacial SiN{sub x} have been investigated in the framework of first-principles molecular dynamics calculations in the temperature range of 0 to 1400 K with subsequent static relaxation. The atomic configurations, thermal stability and stress–strain relations have been calculated. Among the heterostructures studied, only the TiN(111)/SiN/TiN(111) and TiN(111)/Si{sub 2}N{sub 3}/TiN(111) ones are thermally stable. Upon tensile load, decohesion occurs between the Ti−N bonds adjacent to the SiN{sub x} interfacial layer for TiN(001)/SiN/TiN(001) and TiN(111)/Si{sub 2}N{sub 3}/TiN(111) heterostructures, and inside the TiN slab for TiN(001)/Si{sub 3}N{sub 4}/TiN(001) and TiN(110)/SiN/TiN(110) ones. Upon shear, failure occurs in TiN near the interfaces in all the heterostructures, except for the TiN(001)/Si{sub 3}N{sub 4}/TiN(001) one, for which the plastic flow occurs inside the TiN slab. Based on these results we estimate the maximum achievable hardness of nc-TiN/Si{sub 3}N{sub 4} nanocomposites free of impurities to be about 170 GPa. - Highlights: • Interface stability in TiN/SiN{sub x} heterostructures at T ≤ 1400 K is studied by quantum molecular dynamics. • Ideal decohesion and shear strengths of the heterostructures have been calculated. • Achievable hardness of nc-TiN/Si{sub 3}N{sub 4}-like nanocomposites of about 170 GPa is calculated. • Experimentally achieved lower hardness is limited by flaws, such as oxygen impurities.

  20. Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

    International Nuclear Information System (INIS)

    Lin, Chih-Ming; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G; Pisano, Albert P; Chen, Yung-Yu; Felmetsger, Valery V

    2013-01-01

    Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments. (paper)

  1. {sup 5}He ternary fission yields of {sup 252}Cf and {sup 235}U(n,f)

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, J. K. [Department of Physics, Vanderbilt University, Nashville, Tennessee 37235 (United States); Ramayya, A. V. [Department of Physics, Vanderbilt University, Nashville, Tennessee 37235 (United States); Hamilton, J. H. [Department of Physics, Vanderbilt University, Nashville, Tennessee 37235 (United States); Beyer, C. J. [Department of Physics, Vanderbilt University, Nashville, Tennessee 37235 (United States); Kormicki, J. [Department of Physics, Vanderbilt University, Nashville, Tennessee 37235 (United States); Zhang, X. Q. [Department of Physics, Vanderbilt University, Nashville, Tennessee 37235 (United States); Rodin, A. [Flerov Laboratory for Nuclear Reactions, Joint Institute for Nuclear Research, Dubna, Russia (Russian Federation); Formichev, A. [Flerov Laboratory for Nuclear Reactions, Joint Institute for Nuclear Research, Dubna, Russia (Russian Federation); Kliman, J. [Flerov Laboratory for Nuclear Reactions, Joint Institute for Nuclear Research, Dubna, Russia (Russian Federation); Krupa, L. [Flerov Laboratory for Nuclear Reactions, Joint Institute for Nuclear Research, Dubna, Russia (Russian Federation)] (and others)

    2000-04-01

    The relative {sup 4}He and {sup 5}He ternary fission yields were determined from a careful analysis of the energy distribution of {alpha} spectra from a new measurement with a {sup 252}Cf source and from published data on {sup 252}Cf and {sup 235}U(n,f). The kinetic energies of the {sup 5}He and {sup 4}He ternary particles were found to be approximately 11 and 16 MeV, respectively. {sup 5}He particles contribute 10-20 % to the total alpha yield with the remainder originating from {sup 4}He accompanied fission. (c) 2000 The American Physical Society.

  2. Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

    International Nuclear Information System (INIS)

    Tamura, Kazuyuki; Kuroki, Yuichiro; Yasui, Kanji; Suemitsu, Maki; Ito, Takashi; Endou, Tetsuro; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

    2008-01-01

    GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH 3 ) and trimetylgallium (TMG) under low V/III source gas ratio (NH 3 /TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C 3 H 8 ). The AlN layer was deposited as a buffer layer using NH 3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer

  3. Thermal behavior of H-aggregate in a mixed Langmuir-Blodgett film of merocyanine dye, arachidic acid, and n-octadecane ternary system investigated by UV-visible and IR absorption spectroscopy.

    Science.gov (United States)

    Hirano, Yoshiaki; Tateno, Shinsuke; Yamashita, Yoshihide; Ozaki, Yukihiro

    2008-11-13

    We have investigated the thermal behavior of H-aggregate in a mixed Langmuir-Blodgett (LB) film of the merocyanine dye (MS18)-arachidic acid (C20)- n-octadecane (AL18) ternary system by means of UV-visible and IR absorption spectroscopy in the range from 25 to 250 degrees C with a continuous scan. The results of both UV-visible and IR spectra indicate that the temperature-dependent variation in MS 18 aggregation state is linked not only with the degree of intramolecular charge transfer and the behavior of packing, orientation, conformation, and thermal mobility of the MS18 hydrocarbon chain but also with the presence and absence of AL18. The H-aggregate dissociates from 25 up to 50 degrees C, which is caused by the AL18 evaporation from the mixed LB film and the increment of thermal mobility of the MS18 hydrocarbon chain. From 110 to 160 degrees C, blue-shifted bands, attributed to the oligomeric MS18 aggregation, appear near 515 nm in the MS18-C 20-AL18 ternary system as well. The temperature at which the 515 nm band occurs is identical for both present ternary system and previously investigated MS18-deuterated arachidic acid (C20- d) binary system, and it is in good agreement with the melting point (110 degrees C) of cadmium arachidate (CdC20). Therefore, it is indicated that the driving force which induces the 515 nm band comes from the melting phenomenon of CdC20 molecules which are phase-separated from MS 18 molecules in as-deposited LB films.

  4. GaN-on-Si blue/white LEDs: epitaxy, chip, and package

    Science.gov (United States)

    Qian, Sun; Wei, Yan; Meixin, Feng; Zengcheng, Li; Bo, Feng; Hanmin, Zhao; Hui, Yang

    2016-04-01

    The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and industry, which is driven by the great potential of GaN-on-silicon technology in improving the efficiency yet at a much reduced manufacturing cost for solid state lighting and power electronics. It is very challenging to grow high quality GaN on Si substrates because of the huge mismatch in the coefficient of thermal expansion (CTE) and the large mismatch in lattice constant between GaN and silicon, often causing a micro-crack network and a high density of threading dislocations (TDs) in the GaN film. Al-composition graded AlGaN/AlN buffer layers have been utilized to not only build up a compressive strain during the high temperature growth for compensating the tensile stress generated during the cool down, but also filter out the TDs to achieve crack-free high-quality n-GaN film on Si substrates, with an X-ray rocking curve linewidth below 300 arcsec for both (0002) and (101¯2) diffractions. Upon the GaN-on-Si templates, prior to the deposition of p-AlGaN and p-GaN layers, high quality InGaN/GaN multiple quantum wells (MQWs) are overgrown with well-engineered V-defects intentionally incorporated to shield the TDs as non-radiative recombination centers and to enhance the hole injection into the MQWs through the via-like structures. The as-grown GaN-on-Si LED wafers are processed into vertical structure thin film LED chips with a reflective p-electrode and the N-face surface roughened after the removal of the epitaxial Si(111) substrates, to enhance the light extraction efficiency. We have commercialized GaN-on-Si LEDs with an average efficacy of 150-160 lm/W for 1mm2 LED chips at an injection current of 350 mA, which have passed the 10000-h LM80 reliability test. The as-produced GaN-on-Si LEDs featured with a single-side uniform emission and a nearly Lambertian distribution can adopt the wafer-level phosphor

  5. The temperature dependence of the Young's modulus of MgSiN2, AlN and Si3N4

    NARCIS (Netherlands)

    Bruls, R.J.; Hintzen, H.T.J.M.; With, de G.; Metselaar, R.

    2001-01-01

    The temperature dependence of the Young's modulus of MgSiN2 and AlN was measured between 293 and 973 K using the impulse excitation method and compared with literature data reported for Si3N4. The data could be fitted with . The values of the fitting parameters E0 and T0 are related to the Debye

  6. Stability of Naturally Relevant Ternary Phases in the Cu–Sn–S system in Contact with an Aqueous Solution

    Directory of Open Access Journals (Sweden)

    Andrea Giaccherini

    2016-07-01

    Full Text Available A relevant research effort is devoted to the synthesis and characterization of phases belonging to the ternary system Cu–Sn–S, mainly for their possible applications in semiconductor technology. Among all ternary phases, kuramite, Cu3SnS4, mohite, Cu2SnS3, and Cu4Sn7S16 have attracted the highest interest. Numerous studies were carried out claiming for the description of new phases in the ternary compositional field. In this study, we revise the existing literature on this ternary system, with a special focus on the phases stable in a temperature range at 25 °C. The only two ternary phases observed in nature are mohite and kuramite. Their occurrence is described as very rare. A numerical modelling of the stable solid phases in contact with a water solution was underwent to define stability relationships of the relevant phases of the system. The numerical modelling of the Eh-pH diagrams was carried out through the phreeqc software with the lnll.dat thermodynamic database. Owing to the complexity of this task, the subsystems Cu–O–H, Sn–O–H, Cu–S–O–H and Sn–S–O–H were firstly considered. The first Pourbaix diagram for the two naturally relevant ternary phases is then proposed.

  7. Carbometalates. Intermediate phases in the ternary systems RE-T-C (RE = Y, La, Gd-Er; T = Cr, Fe, Ru)

    Energy Technology Data Exchange (ETDEWEB)

    Davaasuren, Bambar

    2010-07-01

    The main motivation of this work was the preparation and characterization of novel compounds in the ternary systems RE-T-C with T = Cr, Fe and Ru with a special focus on compounds containing C{sub 2}{sup n-} and C{sub 3}{sup m-} or mixed C and C{sub 2}{sup n-} as structural units. This would allow to investigate the applicability of the concept of complex anions to this class of materials.

  8. Phase equilibria and critical phenomena in the cesium nitrate-water-diethylamine ternary system

    International Nuclear Information System (INIS)

    Il'in, K.K.; Kurskij, V.F.; Cherkasov, D.G.

    2008-01-01

    Phase equilibria and critical events in ternary cesium nitrate-water-diethylamine system, where border binary liquid system is characterized by aliquation with lower critical temperature of solution (LCTS), have been investigated by visual-polythermal method in the 60-150 Deg C range. Interaction of cesium nitrate in the water-diethylamine system leads to lowering of its LCTS from 146.1 to 69.3 Deg C and decrease of mutual solubility. Distribution ratios of diethylamine between water and organic phases of monotectic equilibrium are calculated at different temperatures. Diethylamine salting out from aqueous solutions by cesium nitrates becomes stronger with rising temperature. Plotted isotherms of phase confirms generalized scheme of topological transformations of ternary systems phase diagrams: salt-binary solvent with salting out

  9. Cyclooctane metathesis catalyzed by silica-supported tungsten pentamethyl [(ΞSiO)W(Me)5]: Distribution of macrocyclic alkanes

    KAUST Repository

    Riache, Nassima

    2014-10-03

    Metathesis of cyclic alkanes catalyzed by the new surface complex [(ΞSiO)W(Me)5] affords a wide distribution of cyclic and macrocyclic alkanes. The major products with the formula CnH2n are the result of either a ring contraction or ring expansion of cyclooctane leading to lower unsubstituted cyclic alkanes (5≤n≤7) and to an unprecedented distribution of unsubstituted macrocyclic alkanes (12≤n≤40), respectively, identified by GC/MS and by NMR spectroscopies.

  10. Wiek startu szkolnego a osiągnięcia w nauce w okresie wczesnoszkolnym

    Directory of Open Access Journals (Sweden)

    Krzysztof Konarzewski

    2013-12-01

    Full Text Available W celu oszacowania związku między osiągnięciami szkolnymi a względnym i bezwzględnym wiekiem uczniów poddano analizie dane 101 519 średnio dziesięcioletnich uczniów z 5585 oddziałów 25 krajów Europy biorących udział w międzynarodowym pomiarze osiągnięć szkolnych IEA TIMSS 2011. W hierarchicznej analizie regresji zmienną zależną były osiągnięcia w matematyce i przyrodoznawstwie, a zmiennymi niezależnymi – względny wiek ucznia w oddziale klasowym i średni wiek oddziału. Efekt względnego wieku okazał się silniejszy niż w badaniach ignorujących podział uczniów na oddziały, mimo że najstarsi i najmłodsi w oddziale urodzili się w różnych porach roku. Efekt względnego wieku zależał od średniej wieku w oddziale: w oddziałach najmłodszych był najsilniejszy, a w najstarszych – nieodróżnialny od zera. Średnia osiągnięć (zwłaszcza w przyrodoznawstwie była wyższa w oddziałach starszych niż w młodszych.

  11. The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN sub x /a-Si:H/a-SiN sub x structures

    CERN Document Server

    Zhang Li; Wang Li; Li Wei; Xu Jun; Huang Xin Fan; Chen Kun Ji

    2002-01-01

    Size-controlled nanocrystalline silicon (nc-Si) has been prepared from a-SiN sub x /a-Si:H/a-SiN sub x ('a' standing for amorphous) structures by thermal annealing. Transmission electron microscope analyses show that the lateral size of the nc-Si is controlled by the annealing conditions and the a-Si sublayer thickness. The deviation of the nc-Si grain size distribution decreases with the a-Si sublayer thickness, so thinner a-Si sublayers are favourable for obtaining uniform nc-Si grains. In the a-Si:H (10 nm) sample annealed at 1000 deg. C for 30 min, an obvious bi-modal size distribution of nc-Si grains appears, but no obvious bi-modal size distribution is found in other samples with thinner a-Si:H sublayers. On the basis of the experimental results, we discuss the process of transition from the sphere-like shape to the disc-like shape in the growth model of the nc-Si crystallization. The critical thickness of the a-Si sublayer for the constrained crystallization can be determined by the present model. More...

  12. Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

    Energy Technology Data Exchange (ETDEWEB)

    Tamura, Kazuyuki [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)], E-mail: kazuyuki@stn.nagaokaut.ac.jp; Kuroki, Yuichiro; Yasui, Kanji [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endou, Tetsuro [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

    2008-01-15

    GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH{sub 3}) and trimetylgallium (TMG) under low V/III source gas ratio (NH{sub 3}/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C{sub 3}H{sub 8}). The AlN layer was deposited as a buffer layer using NH{sub 3} and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH{sub x} radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

  13. Facilitated charge transport in ternary interconnected electrodes for flexible supercapacitors with excellent power characteristics.

    Science.gov (United States)

    Chen, Wanjun; He, Yongmin; Li, Xiaodong; Zhou, Jinyuan; Zhang, Zhenxing; Zhao, Changhui; Gong, Chengshi; Li, Shuankui; Pan, Xiaojun; Xie, Erqing

    2013-12-07

    Flexible and high performance supercapacitors are very critical in modern society. In order to develop the flexible supercapacitors with high power density, free-standing and flexible three-dimensional graphene/carbon nanotubes/MnO2 (3DG/CNTs/MnO2) composite electrodes with interconnected ternary 3D structures were fabricated, and the fast electron and ion transport channels were effectively constructed in the rationally designed electrodes. Consequently, the obtained 3DG/CNTs/MnO2 composite electrodes exhibit superior specific capacitance and rate capability compared to 3DG/MnO2 electrodes. Furthermore, the 3DG/CNTs/MnO2 based asymmetric supercapacitor demonstrates the maximum energy and power densities of 33.71 W h kg(-1) and up to 22,727.3 W kg(-1), respectively. Moreover, the asymmetric supercapacitor exhibits excellent cycling stability with 95.3% of the specific capacitance maintained after 1000 cycle tests. Our proposed synthesis strategy to construct the novel ternary 3D structured electrodes can be efficiently applied to other high performance energy storage/conversion systems.

  14. Effect of atmosphere on the fabrication of Si2N2O matrix composites

    Directory of Open Access Journals (Sweden)

    Wei Li

    2018-03-01

    Full Text Available Si2N2O matrix composites were fabricated by solid/gas reaction in air or N2 atmosphere. The effects of atmosphere on the phase and microstructure of the composites were investigated. The reaction mechanism of Si2N2O system was discussed by analysing the variation of the Gibbs free energy with temperature. The effect of N2 and air on sintering of Si2N2O matrix composites was discussed in relation to observed kinetics and thermodynamic calculations. The results showed that gradient structure of Si2N2O matrix composites were obtained in N2 atmosphere. While high N2 concentration was useful for the formation of the pure β-Si3N4 ceramics, low N2 concentration was proposed to form the pure Si2N2O ceramics. However, in the air atmosphere, structure of the Si3N4/SiO2 composites is homogeneous without the gradient structure appearing. Its composition is a little different as the O2 concentration changes.

  15. Alleviation of process-induced cracking of the antireflection TiN coating (ARC-TiN) in Al-Cu and Al-Cu-Si films

    CERN Document Server

    Peng, Y C; Yang, Y R; Hsieh, W Y; Hsieh, Y F

    1999-01-01

    The alleviation of cracking of the TiN-ARC layer on Al-Cu and Al-Cu-Si films after the development process has been achieved. For the TiN-ARC/Al-Cu system, the stress-induced defects decreased with increasing TiN-ARC layer thickness. In contrast, for the TiN-ARC/Al-Cu-Si system, Si nodules formed during cooling, thereby inducing poor coverage with high aspect-ratio holes. As a result, the photoresist developer penetrated through the films. Chemical vapor deposition of TiN-ARC or predeposition of a Ti Interposing layer was used to eliminate the formation of Si nodules.

  16. Synthesis of the (N2)3- radical from Y2+ and its protonolysis reactivity to form (N2H2)2- via the Y[N(SiMe3)2]3/KC8 reduction system.

    Science.gov (United States)

    Fang, Ming; Lee, David S; Ziller, Joseph W; Doedens, Robert J; Bates, Jefferson E; Furche, Filipp; Evans, William J

    2011-03-23

    Examination of the Y[N(SiMe(3))(2)](3)/KC(8) reduction system that allowed isolation of the (N(2))(3-) radical has led to the first evidence of Y(2+) in solution. The deep-blue solutions obtained from Y[N(SiMe(3))(2)](3) and KC(8) in THF at -35 °C under argon have EPR spectra containing a doublet at g(iso) = 1.976 with a 110 G hyperfine coupling constant. The solutions react with N(2) to generate (N(2))(2-) and (N(2))(3-) complexes {[(Me(3)Si)(2)N](2)(THF)Y}(2)(μ-η(2):η(2)-N(2)) (1) and {[(Me(3)Si)(2)N](2)(THF)Y}(2)(μ-η(2):η(2)-N(2))[K(THF)(6)] (2), respectively, and demonstrate that the Y[N(SiMe(3))(2)](3)/KC(8) reaction can proceed through an Y(2+) intermediate. The reactivity of (N(2))(3-) radical with proton sources was probed for the first time for comparison with the (N(2))(2-) and (N(2))(4-) chemistry. Complex 2 reacts with [Et(3)NH][BPh(4)] to form {[(Me(3)Si)(2)N](2)(THF)Y}(2)(μ-N(2)H(2)), the first lanthanide (N(2)H(2))(2-) complex derived from dinitrogen, as well as 1 as a byproduct, consistent with radical disproportionation reactivity.

  17. Fluorocarbon based atomic layer etching of Si{sub 3}N{sub 4} and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chen [Department of Physics, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu [Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Lai, Chiukin Steven; Hudson, Eric A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

    2016-07-15

    Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO{sub 2} ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar{sup +} ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO{sub 2} from the surface. In the present article, the authors describe controlled etching of Si{sub 3}N{sub 4} and SiO{sub 2} layers of one to several Angstroms using this cyclic ALE approach. Si{sub 3}N{sub 4} etching and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4} were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si{sub 3}N{sub 4} were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si{sub 3}N{sub 4} has a lower physical sputtering energy threshold than SiO{sub 2}, Si{sub 3}N{sub 4} physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si{sub 3}N{sub 4} to SiO{sub 2} ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO{sub 2} to Si{sub 3}N{sub 4} etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si{sub 3}N{sub 4} surfaces. This highly selective etching is explained by a lower carbon consumption of Si{sub 3}N{sub 4} as compared to Si

  18. The effect of Si content on the fracture toughness of CrAlN/Si{sub 3}N{sub 4} coatings

    Energy Technology Data Exchange (ETDEWEB)

    Liu, S. [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075 (Singapore); Gordon Laboratory, Department of Materials Science and Metallurgy, 27 Charles Babbage Rd., Cambridge CB3 0FS (United Kingdom); Wheeler, J. M. [Laboratory for Nanometallurgy, ETH Zürich, Vladimir-Prelog-Weg 5, 8093 Zurich (Switzerland); Davis, C. E.; Clegg, W. J. [Gordon Laboratory, Department of Materials Science and Metallurgy, 27 Charles Babbage Rd., Cambridge CB3 0FS (United Kingdom); Zeng, X. T. [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075 (Singapore)

    2016-01-14

    CrAlN/Si{sub 3}N{sub 4} nanocomposite coatings with different Si contents were deposited to understand how Si influences the microstructure and mechanical behaviour of the coatings, in particular, the fracture toughness. The coating composition, chemical bonding, microstructure, and mechanical properties were studied by energy dispersive spectroscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and nanoindentation, respectively. Using a micro double cantilever beam sample, it was found that the fracture toughness of CrAlN/Si{sub 3}N{sub 4} coatings was higher than that of both the CrN and CrAlN coatings and increased with increasing Si content. Cross-sectional transmission electron microscopy suggested that this was caused by the suppression of cracking at columnar boundaries.

  19. Thermodynamic evaluation of the Ti-Al-O ternary system

    International Nuclear Information System (INIS)

    Lee, B.-J.

    1997-01-01

    A thermodynamic evaluation of the Ti-Al-O ternary system has been made by using thermodynamic models for the Gibbs energy of individual phases. A consistent model parameter set was determined so that the calculation of isothermal sections and other thermodynamic quantities becomes possible. The agreement between calculation and corresponding experimental data was generally good along large temperature and composition range. (orig.)

  20. Effect of Si on the reversibility of stress-induced martensite in Fe-Mn-Si shape memory alloys

    Energy Technology Data Exchange (ETDEWEB)

    Stanford, N. [Centre for Material and Fibre Innovation, Deakin University, Geelong, Victoria 3217 (Australia); Dunne, D.P., E-mail: druce_dunne@uow.edu.au [Faculty of Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia)

    2010-12-15

    Fe-Mn-Si is a well-characterized ternary shape memory alloy. Research on this alloy has consistently shown that the addition of 5-6 wt.% Si is desirable to enhance the reversibility of stress-induced martensite vis-a-vis shape memory. This paper examines the effect of Si on the morphology and the crystallography of the martensite in the Fe-Mn-Si system. It is concluded that the addition of Si increases the c/a ratio of the martensite, reduces the transformation volume change and decreases the atomic spacing difference between the parallel close-packed directions in the austenite-martensite interface (habit) plane. It is proposed that, in addition to austenite strengthening, Si enhances reversibility by reducing the volume change and the interfacial atomic mismatch between the martensite and the austenite. Although shape memory is improved, transformation reversibility remains limited by the necessary misfit dislocations that accommodate the atomic spacing differences in the interface.

  1. Effect of Si on the reversibility of stress-induced martensite in Fe-Mn-Si shape memory alloys

    International Nuclear Information System (INIS)

    Stanford, N.; Dunne, D.P.

    2010-01-01

    Fe-Mn-Si is a well-characterized ternary shape memory alloy. Research on this alloy has consistently shown that the addition of 5-6 wt.% Si is desirable to enhance the reversibility of stress-induced martensite vis-a-vis shape memory. This paper examines the effect of Si on the morphology and the crystallography of the martensite in the Fe-Mn-Si system. It is concluded that the addition of Si increases the c/a ratio of the martensite, reduces the transformation volume change and decreases the atomic spacing difference between the parallel close-packed directions in the austenite-martensite interface (habit) plane. It is proposed that, in addition to austenite strengthening, Si enhances reversibility by reducing the volume change and the interfacial atomic mismatch between the martensite and the austenite. Although shape memory is improved, transformation reversibility remains limited by the necessary misfit dislocations that accommodate the atomic spacing differences in the interface.

  2. Synthesis and properties of ternary mixture of nickel/cobalt/tin oxides for supercapacitors

    Science.gov (United States)

    Ferreira, C. S.; Passos, R. R.; Pocrifka, L. A.

    2014-12-01

    The present study reports the synthesis and morphological, structural and electrochemical characterization of ternary oxides mixture containing nickel, cobalt and tin. The ternary oxide is synthesized by Pechini method with subsequent deposition onto a titanium substrate in a thin-film form. XRD and EDS analysis confirm the formation of ternary film with amorphous nature. SEM analysis show that cracks on the film favor the gain of the surface area that is an interesting feature for electrochemical capacitors. The ternary film is investigated in KOH electrolyte solution using cyclic voltammetry and charge-discharge study with a specific capacitance of 328 F g-1, and a capacitance retention of 86% over 600 cycles. The values of specific power and specific energy was 345.7 W kg-1 and 18.92 Wh kg-1, respectively.

  3. Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

    Directory of Open Access Journals (Sweden)

    Jiongjiong Mo

    2017-01-01

    Full Text Available The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.

  4. Electrochemical studies on electroless ternary and quaternary Ni-P based alloys

    International Nuclear Information System (INIS)

    Balaraju, J.N.; Selvi, V. Ezhil; Grips, V.K. William; Rajam, K.S.

    2006-01-01

    The autocatalytic (electroless) deposition of Ni-P based alloys is a well-known commercial process that has found numerous applications because of their excellent anticorrosive, wear, magnetic, solderable properties, etc. It is a barrier coating, protecting the substrate by sealing it off from the corrosive environments, rather than by sacrificial action. The corrosion resistance varies with the phosphorus content of the deposit: relatively high for a high-phosphorus electroless nickel deposit but low for a low-phosphorus electroless nickel deposit. In the present investigation ternary Ni-W-P alloy films were prepared using alkaline citrate-based bath. Quaternary Ni-W-Cu-P films were deposited by the addition of 3 mM copper ions in ternary Ni-W-P bath. X-ray diffraction (XRD) studies indicated that all the deposits were nanocrystalline, i.e. 1.2, 2.1 and 6.0 nm, respectively, for binary, ternary and quaternary alloys. Corrosion resistance of the films was evaluated in 3.5% sodium chloride solution in non-deaerated and deaerated conditions by potentiodynamic polarization and electrochemical impedance (EIS) methods. Lower corrosion current density values were obtained for the coatings tested in deaerated condition. EIS studies showed that higher charge transfer resistance values were obtained for binary Ni-P coatings compared to ternary or quaternary coatings. For all the coatings a gradual increase in the anodic current density had been observed beyond 740 mV. In deaerated condition all the reported coatings exhibited a narrow passive region and all the values of E p , E tp and i pass were very close showing no major changes in the electrochemical behavior. In the non-deaerated conditions no passivation behavior had been observed for all these coatings

  5. Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Cordier, Y.; Lecotonnec, A.; Chenot, S. [CRHEA-CNRS, Valbonne (France); Baron, N. [CRHEA-CNRS, Valbonne (France); PICOGIGA International, Courtaboeuf (France); Nacer, F.; Goullet, A.; Besland, M.P. [Institut des Materiaux Jean Rouxel IMN, Universite de Nantes (France); Lhermite, H. [Institut d' Electronique et de Telecommunications de Rennes (IETR), Universite de Rennes 1 (France); El Kazzi, M.; Regreny, P.; Hollinger, G. [Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon, UMR CNRS, Ecully (France)

    2009-06-15

    In this work, AlGaN/GaN HEMT structures grown on Si(111) substrates were covered with SiN{sub x} dielectric films, in order to realize MIS-HEMT devices. The dielectric films have been deposited by plasma enhanced chemical vapor deposition using deposition conditions previously optimized for InP based devices. X-ray photoelectron spectroscopy was used to control the interface formation and characterize the deposited films. Capacitance-voltage, Hall effect and current-voltage measurements were carried out on the MIS-HEMTs and HEMT reference devices and correlated with the dielectric layer quality. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Prediction of high-Tc conventional superconductivity in the ternary lithium borohydride system

    Science.gov (United States)

    Kokail, Christian; von der Linden, Wolfgang; Boeri, Lilia

    2017-12-01

    We investigate the superconducting ternary lithium borohydride phase diagram at pressures of 0 and 200 GPa using methods for evolutionary crystal structure prediction and linear-response calculations for the electron-phonon coupling. Our calculations show that the ground state phase at ambient pressure, LiBH4, stays in the P n m a space group and remains a wide band-gap insulator at all pressures investigated. Other phases along the 1 :1 :x Li:B:H line are also insulating. However, a full search of the ternary phase diagram at 200 GPa revealed a metallic Li2BH6 phase, which is thermodynamically stable down to 100 GPa. This superhydride phase, crystallizing in a F m 3 ¯m space group, is characterized by sixfold hydrogen-coordinated boron atoms occupying the fcc sites of the unit cell. Due to strong hydrogen-boron bonding this phase displays a critical temperature of ˜100 K between 100 and 200 GPa. Our investigations confirm that ternary compounds used in hydrogen-storage applications should exhibit high-Tc conventional superconductivity in diamond anvil cell experiments, and suggest a viable route to optimize the superconducting behavior of high-pressure hydrides, exploiting metallic covalent bonds.

  7. Comparative instrumental evaluation of efficacy and safety between a binary and a ternary system in chemexfoliation.

    Science.gov (United States)

    Cameli, Norma; Mariano, Maria; Ardigò, Marco; Corato, Cristina; De Paoli, Gianfranco; Berardesca, Enzo

    2017-09-20

    To instrumentally evaluate the efficacy and the safety of a new ternary system chemo exfoliating formulation (water-dimethyl isosorbide-acid) vs traditional binary systems (water and acid) where the acid is maintained in both the systems at the same concentration. Different peelings (binary system pyruvic acid and trichloroacetic acid-TCA, and ternary system pyruvic acid and TCA) were tested on the volar forearm of 20 volunteers of both sexes between 28 and 50 years old. The outcomes were evaluated at the baseline, 10 minutes, 24 hours, and 1 week after the peeling by means of noninvasive skin diagnosis techniques. In vivo reflectance confocal microscopy was used for stratum corneum evaluation, transepidermal waterloss, and Corneometry for skin barrier and hydration, Laser Doppler velocimetry in association with colorimetry for irritation and erythema analysis. The instrumental data obtained showed that the efficacy and safety of the new ternary system peel compounds were significantly higher compared with the binary system formulations tested. The new formulation peels improved chemexfoliation and reduced complications such as irritation, redness, and postinflammatory pigmentation compared to the traditional aqueous solutions. The study showed that ternary system chemexfoliation, using a controlled delivery technology, was able to provide the same clinical effects in term of stratum corneum reduction with a significantly reduced barrier alteration, water loss, and irritation/erythema compared to traditional binary system peels. © 2017 Wiley Periodicals, Inc.

  8. Interfacial microstructure of Si{sub 3}N{sub 4}/Si{sub 3}N{sub 4} brazing joint with Cu-Zn-Ti filler alloy

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)], E-mail: hitzhangjie@hit.edu.cn; Zhang, X.M.; Zhou, Y. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Naka, M. [Joining and Welding Research Institute, Osaka University, Ibaraki, Osaka 567-0047 (Japan); Svetlana, Atroshenko [Faculty of Mathematics and Mechanics, Saint-Petersburg State University (Russian Federation)

    2008-11-15

    In this study, Si{sub 3}N{sub 4} ceramic was jointed by a brazing technique with a Cu-Zn-Ti filler alloy. The interfacial microstructure between Si{sub 3}N{sub 4} ceramic and filler alloy in the Si{sub 3}N{sub 4}/Si{sub 3}N{sub 4} joint was observed and analyzed by using electron-probe microanalysis, X-ray diffraction and transmission electron microscopy. The results indicate that there are two reaction layers at the ceramic/filler interface in the joint, which was obtained by brazing at a temperature and holding time of 1223 K and 15 min, respectively. The layer nearby the Si{sub 3}N{sub 4} ceramic is a TiN layer with an average grain size of 100 nm, and the layer nearby the filler alloy is a Ti{sub 5}Si{sub 3}N{sub x} layer with an average grain size of 1-2 {mu}m. Thickness of the TiN and Ti{sub 5}Si{sub 3}N{sub x} layers is about 1 {mu}m and 10 {mu}m, respectively. The formation mechanism of the reaction layers was discussed. A model showing the microstructure from Si{sub 3}N{sub 4} ceramic to filler alloy in the Si{sub 3}N{sub 4}/Si{sub 3}N{sub 4} joint was provided as: Si{sub 3}N{sub 4} ceramic/TiN reaction layer/Ti{sub 5}Si{sub 3}N{sub x} reaction layer/Cu-Zn solution.

  9. Experience melting through the Earth's lower mantle via LH-DAC experiments on MgO-SiO2 and CaO-MgO-SiO2 systems

    Science.gov (United States)

    Baron, Marzena A.; Lord, Oliver T.; Walter, Michael J.; Trønnes, Reidar G.

    2015-04-01

    The large low shear-wave velocity provinces (LLSVPs) and ultra-low velocity zones (ULVZs) of the lowermost mantle [1] are likely characterized by distinct chemical compositions, combined with temperature anomalies. The heterogeneities may have originated by fractional crystallization of the magma ocean during the earliest history of the Earth [2,3] and/or the continued accretion at the CMB of subducted basaltic oceanic crust [4,5]. These structures and their properties control the distribution and magnitude of the heat flow at the CMB and therefore the convective dynamics and evolution of the whole Earth. To determine the properties of these structures and thus interpret the seismic results, a good understanding of the melting phase relations of relevant basaltic and peridotitic compositions are required throughout the mantle pressure range. The melting phase relations of lower mantle materials are only crudely known. Recent experiments on various natural peridotitic and basaltic compositions [6-8] have given wide ranges of solidus and liquidus temperatures at lower mantle pressures. The melting relations for MgO, MgSiO3 and compositions along the MgO-SiO2 join from ab initio theory [e.g. 9,10] is broadly consistent with a thermodynamic model for eutectic melt compositions through the lower mantle based on melting experiments in the MgO-SiO2 system at 16-26 GPa [3]. We have performed a systematic study of the melting phase relations of analogues for peridotitic mantle and subducted basaltic crust in simple binary and ternary systems that capture the major mineralogy of Earth's lower mantle, using the laser-heated diamond anvil cell (LH-DAC) technique at 25-100 GPa. We determined the eutectic melting temperatures involving the following liquidus mineral assemblages: 1. bridgmanite (bm) + periclase (pc) and bm + silica in the system MgO-SiO2 (MS), corresponding to model peridotite and basalt compositions 2. bm + pc + Ca-perovskite (cpv) and bm + silica + cpv in the

  10. Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC

    International Nuclear Information System (INIS)

    Guziewicz, M; Kaminska, E; Piotrowska, A; Golaszewska, K; Domagala, J Z; Poisson, M-A; Lahreche, H; Langer, R; Bove, P

    2008-01-01

    The stresses in GaN-based HEMT structures grown on both single crystal 6H SiC(0001) and Si(111) have been compared to these in the HEMT structures grown on new composite substrates engendered as a thin monocrystalline film attached to polycrystalline 3C-SiC substrate. By using HRXRD technique and wafer curvature method we show that stress of monocrystalline layer in composite substrates of the type mono-Si/poly-SiC is lower than 100 MPa and residual stress of epitaxial GaN buffer grown on the composite substrate does not exceed 0.31 GPa, but in the cases of single crystal SiC or Si substrates the GaN buffer stress is compressive in the range of -0.5 to -0.75 GPa. The total stress of the HEMT structure calculated from strains is consistent with the averaged stress of the multilayers stack measured by wafer curvature method. The averaged stress of HEMT structure grown on single crystals is higher than those in structures grown on composites substrates

  11. Binary and ternary solid-liquid phase equilibrium for the systems formed by succinic acid, urea and diethylene glycol: Determination and modelling

    International Nuclear Information System (INIS)

    Li, Yanxun; Li, Congcong; Han, Shuo; Zhao, Hongkun

    2017-01-01

    Highlights: • Solubility of succinic acid in diethylene glycol was determined. • Solubility of succinic acid + urea + diethylene glycol was determined. • Three ternary phase diagrams were constructed for the ternary system. • The ternary phase diagrams were correlated using NRTL model. - Abstract: In this work, the solid-liquid phase equilibrium for binary system of succinic acid + diethylene glycol at the temperatures ranging from (298.15 to 333.15) K and ternary system of (succinic acid + urea + diethylene glycol) at 298.15 K, 313.15 K and 333.15 K was built by using the isothermal saturation method under atmospheric pressure (101.2 kPa), and the solubilities were determined by a high-performance liquid chromatography. The solid-phases formed in the ternary system of ((succinic acid + urea + diethylene glycol)) were confirmed by Schreinemaker’s method of wet residue, which corresponded to urea, succinic acid, and adduct 2:1 urea-succinic acid (mole ratio). Three isothermal phase diagrams for the ternary system were constructed based on the measured mutual solubility. Each isothermal phase diagram included six crystallization fields, three invariant curves, two invariant points and two co-saturated points. The crystalline region of adduct 2:1 urea-succinic acid is larger than those of the other two solids. The solubility of succinic acid in diethylene glycol was correlated with the modified Apelblat equation, λh equation and NRTL model; and the mutual solubility of the ternary ((succinic acid + urea + diethylene glycol)) system was correlated and calculated by the NRTL model. The interaction parameters’ values of succinic acid-urea were acquired. The value of RMSD was 7.11 × 10 −3 for the ternary system. The calculation results had good agreement with the experiment values. Furthermore, the densities of equilibrium liquid phase were acquired. The phase diagrams and the thermodynamic model of the ternary system could provide the basis for design of

  12. Annealing Time Effect on Nanostructured n-ZnO/p-Si Heterojunction Photodetector Performance

    Science.gov (United States)

    Habubi, Nadir. F.; Ismail, Raid. A.; Hamoudi, Walid K.; Abid, Hassam. R.

    2015-02-01

    In this work, n-ZnO/p-Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15-60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm-99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm-2.16 nm. Dark and under illumination current-voltage (I-V) characteristics of the n-ZnO/p-Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance-voltage (C-V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO/Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12-0.19 A/W and 0.18-0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

  13. Growth Structure and Properties of Gradient Nanocrystalline Coatings of the Ti-Al-Si-Cu-N System

    Science.gov (United States)

    Ovchinnikov, S. V.; Pinzhin, Yu. P.

    2016-10-01

    Methods of electron microprobe analysis, X-ray structure analysis and electron microscopy were used to study the element composition and features of the structure-phase, elastic stress state of nanocrystalline coatings of the Ti- Al- Si- Cu- N system with gradient of copper concentration across their thickness. The authors established the effects of element composition modification, non-monotonous behavior of the lattice constant of alloyed nitride and rise in the bending-torsion value of the crystalline lattice in individual nanocrystals to values of around 400 degrees/μm with increase in copper concentration, whereas the sizes of alloyed nitride crystals remained practically unchanged. Mechanical (hardness), adhesion and tribological properties of coatings were examined. Comparative analysis demonstrates higher values of adhesion characteristics in the case of gradient coatings of the Ti- Al- Si- Cu- N system than in the case of single-layer (with constant element concentration) analogues.

  14. Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si3N4/DLC substrate

    International Nuclear Information System (INIS)

    Roman, W S; Riascos, H; Caicedo, J C; Ospina, R; Tirado-MejIa, L

    2009-01-01

    Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si 3 N 4 substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm -2 , 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm -1 for B - N bonding and bands around 1700 cm -1 associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), α-Si 3 N 4 (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si 3 N 4 /DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

  15. N2O + CO reaction over Si- and Se-doped graphenes: An ab initio DFT study

    International Nuclear Information System (INIS)

    Gholizadeh, Reza; Yu, Yang-Xin

    2015-01-01

    Graphical abstract: Si-doped graphene can be one of efficient green catalysts for conversion of the airborne pollutants. - Highlights: • N 2 O can be efficiently reduced by CO over Si-doped graphenes. • Enough charge transferred from Si to N 2 O makes the N 2 –O bond break easily. • Si-doped graphene is efficient green catalysts for conversion of the airborne pollutants. • vdW interaction and ZPE energy significantly influence the predictions of activation energies. - Abstract: Catalytic conversion of non-CO 2 green house gases and other harmful gases is a promising way to protect the atmospheric environment. Non-metal atom-doped graphene is attractive for use as a catalyst in the conversion due to its unique electronic properties, relatively low price and leaving no burden to the environment. To make an attempt on the development of green catalysts for the conversion, ab initio density functional theory is used to investigate the mechanisms of N 2 O reduction by CO on Si- and Se-doped graphenes. We have calculated the geometries and adsorption energies of reaction species (N 2 O, CO, N 2 and CO 2 ) as well as energy profiles along the reaction pathways. The activation energies of N 2 O decomposition and CO oxidation on both Si- and Se-doped graphenes have been obtained. Our calculated results indicate that the catalytic activity of Si-doped graphene is better than the Fe + in gas phase and comparable to the single Fe atom embedded on graphene. In the calculations, we found that van der Waals interactions and zero-point energy are two non-negligible factors for the predictions of the activation energies. Further discussion shows that Si-doped graphene can be one of efficient green catalysts for conversion of the airborne pollutants and Se-doped graphene can be a candidate for oxidizing CO by atomic oxygen.

  16. Sub-barrier fusion of Si+Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

    2017-11-01

    The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  17. Sub-barrier fusion of Si+Si systems

    Directory of Open Access Journals (Sweden)

    Colucci G.

    2017-01-01

    Full Text Available The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3− excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  18. Geometric structure of thin SiO xN y films on Si(100)

    Science.gov (United States)

    Behrens, K.-M.; Klinkenberg, E.-D.; Finster, J.; Meiwes-Broer, K.-H.

    1998-05-01

    Thin films of amorphous stoichometric SiO xN y are deposited on radiation-heated Si(100) by rapid thermal low-pressure chemical vapour deposition. We studied the whole range of possible compositions. In order to determine the geometric structure, we used EXAFS and photoelectron spectroscopy. Tetrahedrons constitute the short-range units with a central Si atom connected to N and O. The distribution of the possible tetrahedrons can be described by a mixture of the Random Bonding Model and the Random Mixture Model. For low oxygen contents x/( x+ y)≤0.3, the geometric structure of the film is almost the structure of a-Si 3N 4, with the oxygen preferably on top of Si-N 3 triangles. Higher oxygen contents induce changes in the bond lengths, bond angles and coordination numbers.

  19. Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

    Directory of Open Access Journals (Sweden)

    James (Zi-Jian Ju

    2016-04-01

    Full Text Available The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x(Ga < 0.2 yields a more than 10-fold reduction in thermal conductivity (κ without deteriorating electrical conductivity (σ, while the Seebeck coefficient (S increases slightly due to a widening band gap compared to binary InN. Employing InN/InGaN SLs (x(Ga = 0.1 with different periods, we demonstrate that confinement effects strongly enhance electron mobility with values as high as ∼820 cm2/V s at an electron density ne of ∼5×1019 cm−3, leading to an exceptionally high σ of ∼5400 (Ωcm−1. Simultaneously, in very short-period SL structures S becomes decoupled from ne, κ is further reduced below the alloy limit (κ < 9 W/m-K, and the power factor increases to 2.5×10−4 W/m-K2 by more than a factor of 5 as compared to In-rich InGaN alloys. These findings demonstrate that quantum confinement in group-III nitride-based superlattices facilitates improvements of thermoelectric properties over bulk-like ternary nitride alloys.

  20. Phase Evolution in and Creep Properties of Nb-Rich Nb-Si-Cr Eutectics

    Science.gov (United States)

    Gang, Florian; Kauffmann, Alexander; Heilmaier, Martin

    2018-03-01

    In this work, the Nb-rich ternary eutectic in the Nb-Si-Cr system has been experimentally determined to be Nb-10.9Si-28.4Cr (in at. pct). The eutectic is composed of three main phases: Nb solid solution (Nbss), β-Cr2Nb, and Nb9(Si,Cr)5. The ternary eutectic microstructure remains stable for several hundred hours at a temperature up to 1473 K (1200 °C). At 1573 K (1300 °C) and above, the silicide phase Nb9(Si,Cr)5 decomposes into α-Nb5Si3, Nbss, and β-Cr2Nb. Under creep conditions at 1473 K (1200 °C), the alloy deforms by dislocation creep while the major creep resistance is provided by the silicide matrix. If the silicide phase is fragmented and, thus, its matrix character is destroyed by prior heat treatment [ e.g., at 1773 K (1500 °C) for 100 hours], creep is mainly controlled by the Laves phase β-Cr2Nb, resulting in increased minimum strain rates. Compared to state of the art Ni-based superalloys, the creep resistance of this three-phase eutectic alloy is significantly higher.

  1. TaSiN nanocomposite thin films: Correlation between structure, chemical composition, and physical properties

    International Nuclear Information System (INIS)

    Ramírez, G.; Oezer, D.; Rivera, M.; Rodil, S.E.; Sanjinés, R.

    2014-01-01

    The structural and electronic properties of fcc-TaN/SiN x nanocomposite thin films deposited by reactive magnetron sputtering have been investigated as function of the N and Si contents. Our studies have been mainly focused on three different types of nanocomposite Ta x Si y N z films based on: nitrogen deficient fcc-TaN 0.88 , nearly stoichiometric fcc-TaN, and over-stoichiometric fcc-TaN 1.2 with the Si contents in the range from 0 to about 15 at.%. The optical properties were investigated by ellipsometric measurements, while the DC. electrical resistivity was measured using the van der Pauw configuration at 300 K. The optical measurements were interpreted using the standard Drude–Lorentz model. The results showed that the electronic properties are closely correlated with both the compositional and the structural modifications of the Ta x Si y N z films induced by the addition of Si atoms, and also depending on the stoichiometry of the starting fcc-TaN system. Thus, depending on both the nitrogen and the silicon contents, the fcc-Ta x Si y N z films can exhibit room temperature resistivity values ranging from 10 2 μΩ cm to about 6 × 10 4 μΩ cm. - Highlights: • TaSiN films were grown using dual magnetron sputtering system. • The physical and structural properties were correlated with the deposition parameters. • The electrical properties were influenced by the nitrogen and silicon contents on the films

  2. Phase equilibria of microemulsion forming system n-decyl-(beta)-D-glucopyranoside/water/n-octane/1-butanol

    DEFF Research Database (Denmark)

    Kahl, Heike; Quitzsch, Konrad; Stenby, Erling Halfdan

    1997-01-01

    of multicomponent system is the coexistence of a highly structural liquid phase enriched with amphiphilic compounds and an excess water or an excess oil phase or both of them. The phase behaviour was studied experimentally by use of turbidity titration and HPLC measurements and theoretically by application...... of the UNIQUAC-equation and the UNIFAC-method. The UNIFAC-method is able to describe the phase behaviour in the quaternary system qualitatively, without fitting parameters. However, by applying the UNIQUAC-method, with adjustable parameters, it was only possible to model the ternary subsystems. The modelling......A systematic investigation of the phase behaviour involving microemulsions is presented with respect to experimental and calculated data for the four-component system n-decyl-(beta)-D-glucopyranoside/water/n-octane/1-butanol and its corresponding ternaries at 25°C. The main feature of this kind...

  3. Probing channel temperature profiles in Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kyaw, L. M., E-mail: a0048661@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore 117602 (Singapore); Bera, L. K.; Dolmanan, S. B.; Tan, H. R.; Bhat, T. N.; Tripathy, S., E-mail: tripathy-sudhiranjan@imre.a-star.edu.sg [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore 117602 (Singapore); Liu, Y.; Bera, M. K.; Singh, S. P.; Chor, E. F. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

    2014-08-18

    Using micro-Raman and photoluminescence (PL) techniques, the channel temperature profile is probed in Al{sub x}Ga{sub 1-x}N/GaN high electron mobility transistors (HEMTs) fabricated on a 200 mm diameter Si(111) substrate. In particular, RuO{sub x}-based gate is used due to the semitransparent nature to the optical excitation wavelengths, thus allowing much accurate thermal investigations underneath the gate. To determine the channel temperature profile in devices subjected to different electrical bias voltages, the GaN band-edge PL peak shift calibration with respect to temperature is used. PL analyses show a maximum channel temperature up to 435 K underneath the gate edge between gate and drain, where the estimated thermal resistance in such a HEMT structure is about 13.7 KmmW{sup −1} at a power dissipation of ∼10 W/mm. The temperature profiles from micro-Raman measurements are also addressed from the E{sub 2}-high optical phonon peak shift of GaN, and this method also probes the temperature-induced peak shifts of optical phonon from Si thus showing the nature of thermal characteristics at the AlN/Si substrate interface.

  4. Waveguide-integrated vertical pin photodiodes of Ge fabricated on p+ and n+ Si-on-insulator layers

    Science.gov (United States)

    Ito, Kazuki; Hiraki, Tatsurou; Tsuchizawa, Tai; Ishikawa, Yasuhiko

    2017-04-01

    Vertical pin structures of Ge photodiodes (PDs) integrated with Si optical waveguides are fabricated by depositing Ge epitaxial layers on Si-on-insulator (SOI) layers, and the performances of n+-Ge/i-Ge/p+-SOI PDs are compared with those of p+-Ge/i-Ge/n+-SOI PDs. Both types of PDs show responsivities as high as 1.0 A/W at 1.55 µm, while the dark leakage current is different, which is consistent with previous reports on free-space PDs formed on bulk Si wafers. The dark current of the p+-Ge/i-Ge/n+-SOI PDs is higher by more than one order of magnitude. Taking into account the activation energies for dark current as well as the dependence on PD area, the dark current of the n+-Ge/i-Ge/p+-SOI PDs is dominated by the thermal generation of carriers via mid-gap defect levels in Ge, while for the p+-Ge/i-Ge/n+-SOI PDs, the dark current is ascribed to not only thermal generation but also other mechanisms such as locally formed conduction paths.

  5. Study of the ternary alloy systems Al-Ni-Fe and Al-Cu-Ru with special regard to quasicrystalline phases

    International Nuclear Information System (INIS)

    Lemmerz, U.

    1996-07-01

    Two ternary alloy-systems, the Al-Ni-Fe system and the Al-Cu-Ru system were studied with special regard to quasicrystalline phases. Isothermal sections were established in both systems in the stoichiometric area of the quasicrystalline phase. In the Al-Ni-Fe system a new stable decagonal phase was found. Its stoichiometric range is very small around Al 71.6 Ni 23.0 Fe 5.4 . The temperature range in which it is stable lies between 847 and 930 C. The decagonal phase undergoes a eutectoid reaction to the three crystalline phases Al 3 Ni 2 , Al 3 Ni and Al 13 Fe 4 at 847 C. It melts peritectically at 930 C forming Al 13 Fe 4 , Al 3 Ni 2 and a liquid. The investigations in the Al-Cu-Ru system concentrated on the phase equilibria between the icosahedral phase and its neighbouring phases in a temperature range between 600 and 1000 C. The icosahedral phase was observed in the whole temperature range. The investigated stoichiometric area extends down to Al contents of 45%, which allows the fields of existence to be determined for the ternary phases α-AlCuRu, the icosahedral phase and Al 7 Cu 2 Ru. Binary phases were determined down to the upper (high Al content) border of AlRu. No hitherto unknown phase was observed in the investigated area. Rietveld analyses were carried out on α-AlCuRu and Al 7 Cu 2 Ru showing some discrepancies from the α-AlMnSi structure taken as a base for α-AlCuRu and confirming the Al 7 Cu 2 Fe structure for Al 7 Cu 2 Ru. (orig.)

  6. Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

    Science.gov (United States)

    Aydin, H.; Bacaksiz, C.; Yagmurcukardes, N.; Karakaya, C.; Mermer, O.; Can, M.; Senger, R. T.; Sahin, H.; Selamet, Y.

    2018-01-01

    We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1‧:3″-terphenyl-5‧ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1‧:3‧1‧-terphenyl-5‧ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π-π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.

  7. Hybrid Integrated Si/SiN Platforms for Wideband Optical Processing

    Science.gov (United States)

    2017-05-08

    annealing process, makes the process prone to dopant redistribution, that hinderers the SiN deposition after full Si device fabrication. To resolve...with 220 nm of crystalline Si. In parallel, a Si die goes through a wet oxidation process to grow 5 μm of thermal oxide. In the next step, 400 nm of... annealing methods. As a figure of merit in hydrophilic bonding, we monitored the surface roughness and bonding strength of a thin oxide layer to

  8. Use of thermodynamic calculation for investigating phase diagram of the ternary system NaCl-PbCl2-NdCl3

    International Nuclear Information System (INIS)

    Kostygov, V.I.; Potemin, S.S.

    1984-01-01

    Thermodynamic calculation of meltability diagram of ternary system NaCl-PbCl 2 -NdCl 3 with the use of literature and experimental data on meltability diagrams of binary systems forming it, as well as data on crystallization heats of the components, has been carried out. Equations are derived under condition of pseudoperfection of the ternary system. 64 mol.% PbCl 2 , 26 mol.% NaCl, 10 mol.% NdCl 3 and average temperature of crystallization 391 deg C correspond to the calculated composition of the ternary eutectics, 49 mol.% PbCl 2 , 35 mol.% NaCl, 16 mol.% NdCl 3 and average temperature of peritectic transformation 416 deg C - to the composition of the ternary peritectic. The results obtained agree well with the experimental data

  9. Układy zasilania silników spalinowych eksploatowanych w kopalniach węgla kamiennego na przykładzie rozwiązań ITG KOMAG.

    Directory of Open Access Journals (Sweden)

    Piotr Dobrzaniecki,

    2017-01-01

    Full Text Available Silniki spalinowe z zapłonem samoczynnym są stosowane w kopalniach węgla kamiennego do napędu maszyn transportowych. Wzrastające wymagania dotyczące poprawy jakości spalin przyczyniły się do rozwoju systemów zasilania silnika. W efekcie zmniejszono zużycie paliwa, zwiększono moc przy jednoczesnym zmniejszeniu masy własnej silnika. W niniejszym artykule przedstawiono przegląd oraz ewolucje systemów zasilania przeznaczonych do silników z zapłonem samoczynnym, uwzględniając jednocześnie problemy eksploatacyjne związane z ich użytkowaniem w podziemnych wyrobiskach węgla kamiennego.

  10. Levels in /sup 179/W studied in the /sup 181/Ta(p, 3n) reaction by on-line electron and gamma ray spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Meijer, B J; Konijn, J [Instituut voor Kernphysisch Onderzoek, Amsterdam (Netherlands); Klank, B; Jett, J H; Ristinen, R A [Colorado Univ., Boulder (USA)

    1975-01-01

    Levels in /sup 179/W have been deduced from in-beam gamma and conversion electron studies of the /sup 181/Ta(p, 3n)/sup 179/W reaction. The gamma-ray spectrum was studied with Ge(Li) detectors and a crystal diffraction spectrometer; the conversion electrons were measured with solenoid Si(Li) spectrometer. The multipolarities of some 50 transitions could be determined. Coriolis mixing of the Nilsson orbits with N = 6 was calculated.

  11. Effect of Ni on eutectic structural evolution in hypereutectic Al-Mg2Si cast alloys

    International Nuclear Information System (INIS)

    Li Chong; Wu Yaping; Li Hui; Wu Yuying; Liu Xiangfa

    2010-01-01

    Research highlights: → By the injection of rod-like NiAl 3 phase in Al-Mg 2 Si alloys, Al-Mg 2 Si binary eutectic structure gradually evolves into Al-Mg 2 Si-NiAl 3 ternary eutectic. → The ternary eutectic presents a unique double rod structure that rod-like NiAl 3 and Mg 2 Si uniformly distribute in Al matrix. → The mechanism of structural evolution was analyzed in terms of the detailed microstructural observations. → The high temperature (350 deg. C) tensile strength of the alloy increases by 23% due to the eutectic structural evolution. - Abstract: The aim of this work is to investigate the eutectic structural evolution of hypereutectic Al-20% Mg 2 Si with Ni addition under a gravity casting process. Three-dimensional morphologies of eutectic phases were observed in detail using field emission scanning electron microscopy, after Al matrix was removed by deep etching or extraction. The results show that Al-Mg 2 Si binary eutectic gradually evolves into Al-Mg 2 Si-NiAl 3 ternary eutectic with the increase of Ni content, and flake-like eutectic Mg 2 Si transforms into rods. The ternary eutectic presents a unique double rod structure that rod-like NiAl 3 and Mg 2 Si uniformly distribute in Al matrix. Further, the high temperature (350 deg. C) tensile strength of the alloy increases by 23% due to the eutectic structure evolution, and the mechanism of structural evolution was discussed and analyzed in terms of the detailed microstructural observations.

  12. Gd-Ni-Si system

    International Nuclear Information System (INIS)

    Bodak, O.I.; Shvets, A.F.

    1983-01-01

    By X-ray phase analysis method isothermal cross section of phase diagram of the Gd-Ni-Si system at 870 K is studied. The existence of nine previously known compounds (GdNisub(6.72)Sisub(6.28), GdNi 10 Si 2 , GdNi 5 Si 3 , GdNi 4 Si, GdNi 2 Si 2 , GdNiSi 3 , GdNiSi 2 , Gd 3 Ni 6 Si 2 and GdNiSi) is confirmed and three new compounds (GdNisub(0.2)Sisub(1.8), Gdsub(2)Nisub(1-0.8)Sisub(1-1.2), Gd 5 NiSi 4 ) are found. On the base of Gd 2 Si 3 compound up to 0.15 at. Ni fractions, an interstitial solid solution is formed up to 0.25 at Ni fractions dissolution continues of substitution type. The Gd-Ni-Si system is similar to the Y-Ni-Si system

  13. Two-step superconducting transition in Cu-V-Si alloys

    International Nuclear Information System (INIS)

    Sharma, R.G.; Krishna, M.M.; Narlikar, A.V.

    1980-01-01

    Copper ternary alloys containing small amounts of vanadium and silicon exhibit a two-step superconducting resistive transition. The first transition occurs around 17 K, the transition temperature of β-W V 3 Si, followed by a plateau and a second transition around 10 K. The resistivity, however, does not drop to zero down to 2.5 K. Reduction of the wire diameter causes the two transitions to shift to lower temperatures. Complete superconductivity in these specimens is absent for two reasons. Firstly, the superconducting volume fraction present in these alloy-wires is below the threshold given by either the effective-medium theory or the site percolation theory. Secondly, the superconducting phase V 3 Si does not precipitate in copper matrix in a fine structure and the proximity effect does not operate strongly. Annealing causes the superconducting particles to coalesce and grow in size and suppresses the proximity effect and superconductivity further in these alloy wires. (author)

  14. Paramagnetic centers in ternary coordinated oxygen in beryllium aluminosilicate glasses

    International Nuclear Information System (INIS)

    Blaginina, L.A.; Zatsepin, A.F.; Dmitriev, I.A.

    1988-01-01

    Glasses of the composition 3BeO-Al 2 O 3 -6SiO 2 containing a homogenizing additive of MgF 2 were synthesized. The ESR spectra of x-ray and gamma irradiated specimens were determined. A complex ESR spectrum arose in the original glass. The ESR spectrum of the gamma-irradiated polycrystalline Be 2 SiO 4 glass was almost identical to the crystallized glass. It was shown that the presence of beryllium atoms in the composition of silicate glasses created the conditions for the formation of structural fragments with ternary coordinated oxygen

  15. High-performance thermoelectric materials based on ternary TiO2/CNT/PANI composites.

    Science.gov (United States)

    Erden, Fuat; Li, Hui; Wang, Xizu; Wang, FuKe; He, Chaobin

    2018-04-04

    In the present work, we report the fabrication of high-performance thermoelectric materials using TiO2/CNT/PANI ternary composites. We showed that a conductivity of ∼2730 S cm-1 can be achieved for the binary CNT (70%)/PANI (30%) composite, which is the highest recorded value for the reported CNT/PANI composites. We further demonstrated that the Seebeck coefficient of CNT/PANI composites could be enhanced by incorporating TiO2 nanoparticles into the binary CNT/PANI composites, which could be attributed to lower carrier density and the energy scattering of low-energy carriers at the interfaces of TiO2/a-CNT and TiO2/PANI. The resulting TiO2/a-CNT/PANI ternary system exhibits a higher Seebeck coefficient and enhanced thermoelectric power. Further optimization of the thermoelectric power was achieved by water treatment and by tuning the processing temperature. A high thermoelectric power factor of 114.5 μW mK-2 was obtained for the ternary composite of 30% TiO2/70% (a-CNT (70%)/PANI (30%)), which is the highest reported value among the reported PANI based ternary composites. The improvement of thermoelectric performance by incorporation of TiO2 suggests a promising approach to enhance power factor of organic thermoelectric materials by judicial tuning of the carrier concentration and electrical conductivity.

  16. Phase equilibria in the ternary In-Ni-Sn system at 700 °C.

    Science.gov (United States)

    Schmetterer, C; Zemanova, A; Flandorfer, H; Kroupa, A; Ipser, H

    2013-04-01

    The phase equilibria of the ternary system In-Ni-Sn were investigated experimentally at 700 °C using X-ray diffraction (XRD) and scanning electron microscopy (SEM) including electron micro probe analysis (EMPA) and energy dispersive X-ray spectroscopy (EDX). A corresponding isothermal section was established based on these results. This particular temperature was chosen because it allowed obtaining reliable results within reasonable time. The existence of the ternary phase InNi 6 Sn 5 was confirmed whereas the ternary compound In 2 NiSn, reported earlier in literature, was found to be part of a large solid solution field based on binary InNi. The ternary solubility of the binary phases was established, and continuous solid solutions were found between the isostructural phases Ni 3 Sn LT and InNi 3 as well as between Ni 3 Sn 2 HT and InNi 2 . In addition, this isothermal section could be well reproduced by CALPHAD modelling. The resulting calculated isotherm at 700 °C is presented, too, and compared with the experimental results.

  17. Zmienność zasobów termicznych w Polsce w aspekcie obserwowanych zmian klimatu

    Directory of Open Access Journals (Sweden)

    Agnieszka Sulikowska

    2016-06-01

    Full Text Available Obserwowany wzrost temperatury powietrza na półkuli północnej, zwłaszcza w Europie, może prowadzić do znacznych zmian w fenologii roślin, a w konsekwencji także w produkcji rolnej. Celem pracy jest ocena zróżnicowania przestrzennego zasobów termicznych na obszarze Polski oraz ich zmienności w okresie 1951–2010 w obliczu zmieniających się warunków termicznych. Analizę przeprowadzono z wykorzystaniem dobowych wartości temperatury powietrza. Zasoby termiczne zdefiniowane zostały za pomocą sum temperatur efektywnych (Growing Degree Days – GDD obliczonych dla wartości progowych temperatury powietrza: 0°C, 5°C i 10°C. Następstwem analizy zróżnicowania przestrzennego zasobów termicznych była ocena ich zmienności wieloletniej oraz tendencji zmian. Badania objęły w szczególności regiony sadownicze odznaczające się największą powierzchnią upraw drzew owocowych oraz wielkością zbiorów jabłek, śliw i wiśni. Uzyskane wyniki potwierdzają zwiększenie zasobów termicznych na obszarze kraju, będące konsekwencją wydłużającego się okresu wegetacyjnego.

  18. Theoretical prediction and experimental confirmation of unusual ternary ordered semiconductor compounds in Sr-Pb-S system.

    Science.gov (United States)

    Hao, Shiqiang; Zhao, Li-Dong; Chen, Chang-Qiang; Dravid, Vinayak P; Kanatzidis, Mercouri G; Wolverton, Christopher M

    2014-01-29

    We examine the thermodynamics of phase separation and ordering in the ternary Ca(x)Pb(1-x)S and Sr(x)Pb(1-x)S systems by density-functional theory combined with a cluster expansion and Monte Carlo simulations. Similar to most other ternary III-V or IV-VI semiconductor alloys, we find that bulk phase separation is thermodynamically preferred for PbS-CaS. However, we predict the surprising existence of stable, ordered ternary compounds in the PbS-SrS system. These phases are previously unreported ordered rocksalt-based compounds: SrPb3S4, SrPbS2, and Sr3PbS4. The stability of these predicted ordered phases is confirmed by transmission electron microscopy observations and band gap measurements. We believe this work paves the way for a combined theory-experiment approach to decipher complex phase relations in multicomponent chalcogenide systems.

  19. Structure, equilibrium and ligand exchange dynamics in the binary and ternary dioxouranium(VI)-ethylenediamine-N,N'-diacetic acid-fluoride system: A potentiometric, NMR and X-ray crystallographic study.

    Science.gov (United States)

    Palladino, Giuseppe; Szabó, Zoltán; Fischer, Andreas; Grenthe, Ingmar

    2006-11-21

    The structure, thermodynamics and kinetics of the binary and ternary uranium(VI)-ethylenediamine-N,N'-diacetate (in the following denoted EDDA) fluoride systems have been studied using potentiometry, 1H, 19F NMR spectroscopy and X-ray diffraction. The UO2(2+)-EDDA system could be studied up to -log[H3O+] = 3.4 where the formation of two binary complexes UO2(EDDA)(aq) and UO2(H3EDDA)3+ were identified, with equilibrium constants logbeta(UO2EDDA) = 11.63 +/- 0.02 and logbeta(UO2H3EDDA3+) = 1.77 +/- 0.04, respectively. In the ternary system the complexes UO2(EDDA)F-, UO2(EDDA)(OH)- and (UO2)2(mu-OH)2(HEDDA)2F2(aq) were identified; the latter through 19F NMR. 1H NMR spectra indicate that the EDDA ligand is chelate bonded in UO2(EDDA)(aq), UO2(EDDA)F- and UO2(EDDA)(OH)- while only one carboxylate group is coordinated in UO2(H3EDDA)3+. The rate and mechanism of the fluoride exchange between UO2(EDDA)F- and free fluoride was studied by 19F NMR spectroscopy. Three reactions contribute to the exchange; (i) site exchange between UO2(EDDA)F- and free fluoride without any net chemical exchange, (ii) replacement of the coordinated fluoride with OH- and (iii) the self dissociation of the coordinated fluoride forming UO2(EDDA)(aq); these reactions seem to follow associative mechanisms. (1)H NMR spectra show that the exchange between the free and chelate bonded EDDA is slow and consists of several steps, protonation/deprotonation and chelate ring opening/ring closure, the mechanism cannot be elucidated from the available data. The structure (UO2)2(EDDA)2(mu-H2EDDA) was determined by single crystal X-ray diffraction and contains two UO2(EDDA) units with tetracoordinated EDDA linked by H2EDDA in the "zwitterion" form, coordinated through a single carboxylate oxygen from each end to the two uranium atoms. The geometry of the complexes indicates that there is no geometric constraint for an associative ligand substitution mechanism.

  20. On a two-layer Si_3N_4/SiO_2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Arutyunyan, S. S.; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V.

    2016-01-01

    The fabrication of a two-layer Si_3N_4/SiO_2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si_3N_4/SiO_2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

  1. Constituent phase diagrams of the Al-Cu-Fe-Mg-Ni-Si system and their application to the analysis of aluminium piston alloys

    Energy Technology Data Exchange (ETDEWEB)

    Belov, N.A. [Moscow Institute of Steel and Alloys, Leninsky prosp. 4, Moscow 119049 (Russian Federation); Eskin, D.G. [Netherlands Institute for Metals Research, Rotterdamseweg 137, 2628AL Delft (Netherlands)]. E-mail: deskin@nimr.nl; Avxentieva, N.N. [Moscow Institute of Steel and Alloys, Leninsky prosp. 4, Moscow 119049 (Russian Federation)

    2005-10-15

    The evaluation of phase equilibria in quinary systems that constitute the commercially important Al-Cu-Fe-Mg-Ni-Si alloying system is performed in the compositional range of casting alloys by means of metallography, electron probe microanalysis, X-ray diffractometry, differential scanning calorimetry, and by the analysis of phase equilibria in the constituent systems of lesser dimensionality. Suggested phase equilibria are illustrated by bi-, mono- and invariant solidification reactions, polythermal diagrams of solidification, distributions of phase fields in the solid state, and isothermal and polythermal sections. Phase composition of as-cast alloys is analyzed in terms of non-equilibrium solidification. It is shown that the increase in copper concentration in piston Al-Si alloys results in the decrease in the equilibrium solidus from 540 to 505 deg C. Under non-equilibrium solidification conditions, piston alloys finish solidification at {approx}505 deg C. Iron is bound in the quaternary Al{sub 8}FeMg{sub 3}Si{sub 6} phase in low-iron alloys and in the ternary Al{sub 9}FeNi and Al{sub 5}FeSi phases in high-iron alloys.

  2. Characterization and properties Ti-Al-Si-N nanocomposite coatings prepared by middle frequency magnetron sputtering

    Science.gov (United States)

    Zou, C. W.; Zhang, J.; Xie, W.; Shao, L. X.; Guo, L. P.; Fu, D. J.

    2011-10-01

    TiN-containing amorphous Ti-Al-Si-N (nc-TiN/a-Si 3N 4 or a-AlN) nanocomposite coatings were deposited by using a modified closed field twin unbalanced magnetron sputtering system which is arc assisted and consists of two circles of targets, at a substrate temperature of 300 °C. XRD, XPS and High-resolution TEM experiments showed that the coatings contain TiN nanocrystals embedded in the amorphous Si 3N 4 or AlN matrix. The coatings exhibit good mechanical properties that are greatly influenced by the Si contents. The hardness of the Ti-Al-Si-N coatings deposited at Si targets currents of 5, 8, 10, and 12 A were 45, 47, 54 and 46 GPa, respectively. The high hardness of the deposited Ti-Al-Si-N coatings may be own to the plastic distortion and dislocation blocking by the nanocrystalline structure. On the other hand, the friction coefficient decreases monotonously with increasing Si contents. This result would be caused by tribo-chemical reactions, which often take place in many ceramics, e.g. Si 3N 4 reacts with H 2O to produce SiO 2 or Si(OH) 2 tribolay-layer.

  3. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers

    International Nuclear Information System (INIS)

    Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

    2017-01-01

    The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [es

  4. Ternary Weighted Function and Beurling Ternary Banach Algebra l1ω(S

    Directory of Open Access Journals (Sweden)

    Mehdi Dehghanian

    2011-01-01

    Full Text Available Let S be a ternary semigroup. In this paper, we introduce our notation and prove some elementary properties of a ternary weight function ω on S. Also, we make ternary weighted algebra l1ω(S and show that l1ω(S is a ternary Banach algebra.

  5. Experimental measurement and prediction of (liquid + liquid + liquid) equilibrium for the system (n-hexadecane + water + triacetin)

    International Nuclear Information System (INIS)

    Revellame, Emmanuel D.; Holmes, William E.; Hernandez, Rafael; French, W. Todd; Forks, Allison; Ashe, Taylor; Estévez, L. Antonio

    2016-01-01

    Highlights: • Phase diagram for the system n-hexadecane + water + triacetin was established at T = 296.15 K and atmospheric pressure (0.1 MPa). • Both NRTL and UNIQUAC activity coefficient model adequately predicts the LLLE of the ternary system. • The phase equilibrium of the system is predominantly dictated by enthalpic contributions to the activity coefficient. - Abstract: The phase diagram for the ternary system containing (n-hexadecane + water + triacetin) was obtained experimentally at T = 296.15 K and ambient pressure. Results show that this system is of Type 3 according to the Treybal classification of ternary system. NRTL and UNIQUAC interaction parameters were calculated from binary phase equilibrium values and were used to predict the (liquid + liquid + liquid) equilibrium (LLLE) region. Results indicated that both NRTL and UNIQUAC could predict the LLLE region of the system with similar precision as indicated by the comparable standard deviations. This indicates that the enthalpic contribution to the activity coefficient is predominant and entropic contributions can be neglected.

  6. Dimerization of A-[alpha]-[SiNb3W9O40]7- by pH-controlled formation of individual Nb−µ-O−Nb linkages

    Science.gov (United States)

    Gyu-Shik Kim; Huadong Zeng; Wade A. Neiwert; Jennifer J. Cowan; Donald VanDerveer; Craig L. Hill; Ira A. Weinstock

    2003-01-01

    The reversible, stepwise formation of individual Nb−µ-O−Nb linkages during acid condensation of 2 equiv of A-[alpha]-[SiNb3W9O40]7- (1) to the tri-µ-oxo-bridged structure A-[alpha]-[Si2Nb6W18O77]8- (4) is demonstrated by a combination of X-ray crystallography and variable-pD solution 183W and 29Si NMR spectroscopy. Addition of DCl to a pD 8.4...

  7. Determination of thermodynamic properties of aluminum based binary and ternary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Altıntas, Yemliha [Abdullah Gül University, Faculty of Engineering, Department of Materials Science and Nanotechnology, 38039, Kayseri (Turkey); Aksöz, Sezen [Nevşehir Hacı Bektaş Veli University, Faculty of Arts and Science, Department of Physics, 50300, Nevşehir (Turkey); Keşlioğlu, Kâzım, E-mail: kesli@erciyes.edu.tr [Erciyes University, Faculty of Science, Department of Physics, 38039, Kayseri (Turkey); Maraşlı, Necmettin [Yıldız Technical University, Faculty of Chemical and Metallurgical Engineering, Department of Metallurgical and Materials Engineering, 34210, Davutpaşa, İstanbul (Turkey)

    2015-11-15

    In the present work, the Gibbs–Thomson coefficient, solid–liquid and solid–solid interfacial energies and grain boundary energy of a solid Al solution in the Al–Cu–Si eutectic system were determined from the observed grain boundary groove shapes by measuring the thermal conductivity of the solid and liquid phases and temperature gradient. Some thermodynamic properties such as the enthalpy of fusion, entropy of fusion, the change of specific heat from liquid to solid and the electrical conductivity of solid phases at their melting temperature were also evaluated by using the measured values of relevant data for Al–Cu, Al–Si, Al–Mg, Al–Ni, Al–Ti, Al–Cu–Ag, Al–Cu–Si binary and ternary alloys. - Highlights: • The microstructure of the Al–Cu–Si eutectic alloy was observed through SEM. • The three eutectic phases (α-Al, Si, CuAl{sub 2}) have been determined by EDX analysis. • Solid–liquid and solid–solid interfacial energies of α-Al solution were determined. • ΔS{sub f},ΔH{sub M}, ΔC{sub P}, electrical conductivity of solid phases for solid Al solutions were determined. • G–T coefficient and grain boundary energy of solid Al solution were determined.

  8. Experimental investigation of phase equilibria in the Co-Ni-Zr ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xingjun; Yang, Shuiyuan; Yu, Wenjie; Wang, Cuiping [Xiamen Univ. (China). Fujian Key Laboratory of Materials Genome; Xiong, Huaping; Cheng, Yaoyong; Wu, Xin [Beijing Institute of Aeronautical Materials (China). Div. of Welding and Forging

    2016-10-15

    The phase equilibria of the Co-Ni-Zr ternary system at 1 000 C, 1 100 C and 1 200 C were experimentally investigated by means of back-scattered electron imaging, electron probe microanalysis and X-ray diffraction on the equilibrated ternary alloys. In this study, no ternary compound is found. The (αCo, Ni) phase region extends from the Ni-rich corner to the Co-rich corner with small solubility of Zr at three sections. At 1 000 C and 1 100 C, Ni{sub 5}Zr, Co{sub 2}Zr and Ni{sub 10}Zr{sub 7} phases have large solid solution ranges, but Ni{sub 10}Zr{sub 7} phase disappears at 1 200 C. The Ni{sub 7}Zr{sub 2}, NiZr, Co{sub 11}Zr{sub 2}, Co{sub 23}Zr{sub 6} and CoZr phases exhibit nearly linear compounds in the studied sections, and have large composition ranges. Additionally, some differences in phase relationship exist among the above three isothermal sections.

  9. Calculation of Fe–B–V ternary phase diagram

    International Nuclear Information System (INIS)

    Homolová, Viera; Kroupa, Aleš; Výrostková, Anna

    2012-01-01

    Highlights: ► Phase diagram of Fe–B–V system was modelled by CALPHAD method. ► Database for thermodynamic calculations for Fe–B–V system was created. ► The new ternary phase was found in 67Fe–18B–15V [in at.%] alloy. - Abstract: The phase equilibria of the Fe–B–V ternary system are studied experimentally and theoretically in this paper. Phase diagram of the system was modelled by CALPHAD method. Boron was modelled as an interstitial element in the FCC and BCC solid solutions. The calculations of isothermal sections of phase diagram are compared with our experimental results at 903 and 1353 K and with available literature experimental data. New ternary phase (with chemical composition 28Fe32V40B in at.%) was found in 67Fe–18B–15V alloy [in at.%]. Further experimental studies for the determination of exact nature of the ternary phase including crystallographic information are necessary.

  10. Ekspansja muzeów w Europie Środkowej?

    Directory of Open Access Journals (Sweden)

    Jagodzińska, Katarzyna

    2015-06-01

    Full Text Available Przedmiotem artykułu są rozważania na temat specyfiki Europy Środkowej w zakresie kolekcji i muzeów sztuki współczesnej oraz możliwość stworzenia alternatywy regionalnej dla krajów zachodnich. Kontekstem dla tych rozważań jest ekspansjonistyczna polityka współczesnych muzeów, która w związku z licznymi nowymi inwestycjami – w szczególności Luwru, Fundacji Guggenheima, Ermitażu – budzi w świecie muzeologicznym różnorakie dylematy. Autorka omawia światowe "marki muzealne" inwestujące w Europie Środkowej, zastanawia się nad skutkami ekspansji tych "koncernów" dla kultury w regionie, wskazuje też na potencjał regionu, który można wykorzystać bez posiłkowania się nazwiskami światowych kolekcjonerów.

  11. Influence of the Mo and W additions on the microstructure evolution and mechanical properties in Si-Cr spring steels

    International Nuclear Information System (INIS)

    Ban, Deok Young; Lee, Sang Lae; Nam, Won Jong

    1998-01-01

    Effects of the Mo and W additions to Si-Cr spring steels on the microstructural evolution and mechanical properties in spring steels were investigated. It was found that the Mo and/or W addition does not change the behavior of tempered carbide at low temperatures, such as the precipitation of ε-carbide and the conversion of ε-carbide to cementite, via dilatometry tests and the observation of microstructure using TEM. However, it would reduce the coarsening rate of cementite at high temperature above 450 .deg. C, resulting in the smaller size of cementite particles due to the lower diffusion rate. Since the sag resistance depends on the distribution and the size of precipitates, steel C(0.2% W) showed the strongest sag resistance whereas steel A showed the weakest sag resistance, when tempered at 450 .deg. C. Also, an abundance of precipitates at 350 deg. C tempering exhibits the maximum loop area, i.e., the sag resistance for all the tested steels. The Mo and W additions to Si-Cr spring steels raised the ratio of loop area/tensile strength. Therefore, the Mo and W additions would be effective method to increase the sag resistance as well as strength in Si-Cr spring steels

  12. Ternary Hollow Mesoporous TiN/N-Graphene/Pt Hybrid Results in Enhanced Electrocatalytic Performance for Methanol Oxidation and Oxygen Reduction Reaction

    International Nuclear Information System (INIS)

    Liu, Baocang; Huo, Lili; Zhang, Geng; Zhang, Jun

    2016-01-01

    Highlights: • A novel hollow mesoporous ternary @M-TiN/N-G/Pt electrocatalysts were synthesized. • The @M-TiN/N-G/Pt electrocatalysts displayed outstanding activity and stability toward MOR and ORR. • The activity and stability of @M-TiN/N-G/Pt electrocatalysts were higher than Pt/TiN, @M-TiN/Pt, and Pt/C catalysts. • The excellent electrocatalytic performance rooted in its unique configuration. • Several reasons were proposed to explain the enhanced electrocatalytic performance of @M-TiN/N-G/Pt. - Abstract: A novel hollow mesoporous TiN/N-graphene (N-G) hybrid architecture (@M-TiN/N-G) composed of N-doped graphene wrapped mesoporous TiN nanoparticle shells was constructed for the first time. It can be used as an efficient support for creating a highly efficient ternary @M-TiN/N-G/Pt electrocatalyst with superior catalytic activity and stability for methanol oxidation reaction (MOR) and oxygen reduction reaction (ORR) through decorating well-dispersed Pt nanoparticles on @M-TiN/N-G surface. By optimizing the content of N-G in catalysts, the @M-TiN/N-G/Pt catalysts display superior catalytic activity and stability toward MOR and ORR to traditional Pt/C and graphene-free Pt/TiN and @M-TiN/Pt catalysts. The various characterization results reveal that the outstanding electrocatalytic performance of @M-TiN/N-G/Pt catalyst roots in its large surface area, high porosity, strong interaction among Pt, TiN, and N-G, excellent electron transfer property facilitated by N-doped graphene, and small size of Pt and TiN nanocrystals. The synthetic approach may be available for constructing other graphene based hollow metal nitrides, carbides, and phosphides for various electrocatalytic applications.

  13. Modelling of volumetric properties of binary and ternary mixtures by CEOS, CEOS/GE and empirical models

    Directory of Open Access Journals (Sweden)

    BOJAN D. DJORDJEVIC

    2007-12-01

    Full Text Available Although many cubic equations of state coupled with van der Waals-one fluid mixing rules including temperature dependent interaction parameters are sufficient for representing phase equilibria and excess properties (excess molar enthalpy HE, excess molar volume VE, etc., difficulties appear in the correlation and prediction of thermodynamic properties of complex mixtures at various temperature and pressure ranges. Great progress has been made by a new approach based on CEOS/GE models. This paper reviews the last six-year of progress achieved in modelling of the volumetric properties for complex binary and ternary systems of non-electrolytes by the CEOS and CEOS/GE approaches. In addition, the vdW1 and TCBT models were used to estimate the excess molar volume VE of ternary systems methanol + chloroform + benzene and 1-propanol + chloroform + benzene, as well as the corresponding binaries methanol + chloroform, chloroform + benzene, 1-propanol + chloroform and 1-propanol + benzene at 288.15–313.15 K and atmospheric pressure. Also, prediction of VE for both ternaries by empirical models (Radojković, Kohler, Jackob–Fitzner, Colinet, Tsao–Smith, Toop, Scatchard, Rastogi was performed.

  14. Dependence of glass-forming ability on starting compositions in Y2O3–Al2O3–SiO2 system

    Directory of Open Access Journals (Sweden)

    Yixiang Chen

    2011-09-01

    Full Text Available The dependence of glass-forming ability on starting compositions in Y2O3–Al2O3–SiO2 (YAS system has been investigated by melting experiment. Transparent YAS glasses have been prepared under the condition of furnace cooling instead of quenching. It is found that, in the YAS ternary phase diagram, the compositions on the Y3Al5O12–SiO2 line and with 52-68 mol% SiO2 have a higher glass-forming ability to produce pure glass. For the compositions with too much or less SiO2 or with Y/Al = 5/3, 1/1, or 1/3, crystallization occurs with the formation of Y3Al5O12, Y2Si2O7, Al6Si2O13, or SiO2. The densities of the YAS glasses increase with decreasing SiO2 contents and increasing Y/Al ratios, and for the samples with Y/Al = 3/5 there is a good linear relationship between the density and SiO2 content.

  15. A Three-Step Atomic Layer Deposition Process for SiN x Using Si2Cl6, CH3NH2, and N2 Plasma.

    Science.gov (United States)

    Ovanesyan, Rafaiel A; Hausmann, Dennis M; Agarwal, Sumit

    2018-06-06

    We report a novel three-step SiN x atomic layer deposition (ALD) process using Si 2 Cl 6 , CH 3 NH 2 , and N 2 plasma. In a two-step process, nonhydrogenated chlorosilanes such as Si 2 Cl 6 with N 2 plasmas lead to poor-quality SiN x films that oxidize rapidly. The intermediate CH 3 NH 2 step was therefore introduced in the ALD cycle to replace the NH 3 plasma step with a N 2 plasma, while using Si 2 Cl 6 as the Si precursor. This three-step process lowers the atomic H content and improves the film conformality on high-aspect-ratio nanostructures as Si-N-Si bonds are formed during a thermal CH 3 NH 2 step in addition to the N 2 plasma step. During ALD, the reactive surface sites were monitored using in situ surface infrared spectroscopy. Our infrared spectra show that, on the post-N 2 plasma-treated SiN x surface, Si 2 Cl 6 reacts primarily with the surface -NH 2 species to form surface -SiCl x ( x = 1, 2, or 3) bonds, which are the reactive sites during the CH 3 NH 2 cycle. In the N 2 plasma step, reactive -NH 2 surface species are created because of the surface H available from the -CH 3 groups. At 400 °C, the SiN x films have a growth per cycle of ∼0.9 Å with ∼12 atomic percent H. The films grown on high-aspect-ratio nanostructures have a conformality of ∼90%.

  16. Enhanced visible light-driven photocatalytic performance of ZnO–g-C{sub 3}N{sub 4} coupled with graphene oxide as a novel ternary nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Wan-Kuen; Clament Sagaya Selvam, N., E-mail: clamentloy@gmail.com

    2015-12-15

    Highlights: • Prepared novel ternary nanocomposite consisting of ZnO, g-C{sub 3}N{sub 4}, and graphene oxide. • ZnO nanospheres disperse evenly and embed on porous g-C{sub 3}N{sub 4}-coupled graphene oxide. • Heterojunction of ternary composite account for the enhanced photocatalytic activity. - Abstract: This article reports a novel ternary nanocomposite consisting of ZnO, g-C{sub 3}N{sub 4}, and graphene oxide (GO) that provides enhanced photocatalytic performance and stability. The ZnO nanospheres disperse evenly and embed themselves in the porous g-C{sub 3}N{sub 4}. Composites with various g-C{sub 3}N{sub 4} and GO to ZnO weight ratios were synthesized and characterized systematically. The results indicated that the absorption of binary g-C{sub 3}N{sub 4}/ZnO nanocomposites shifted to a lower energy compared to pure ZnO in a fashion consistent with the loading content of g-C{sub 3}N{sub 4}. Notably, the loading content of GO in the ZnO–g-C{sub 3}N{sub 4} composite resulted in increased absorption in the visible range and improved charge separation efficiency, thereby drastically improving photocatalytic activity. Successful hybridization of ternary nanocomposite was confirmed by drastic quenching of fluorescence and broader visible light absorption. The optimal content of g-C{sub 3}N{sub 4} in the ZnO–g-C{sub 3}N{sub 4} composite was 50%, which exhibited the effective hybridization between ZnO and g-C{sub 3}N{sub 4}, and high photocatalytic efficiency. However, the photocatalytic degradation of the ternary nanocomposite showed performance that was two times greater than ZnO–g-C{sub 3}N{sub 4}, exhibiting 99.5% degradation efficiency after just 15 min of light irradiation. The combined heterojunction and synergistic effects of this composite account for the improved photocatalytic activity.

  17. Reinvestigation of the Ce–Co–Al ternary system: Isothermal section at 973 K

    Energy Technology Data Exchange (ETDEWEB)

    Nasri, N. [Unité de Recherche de Chimie des Matériaux et de l’Environnement, ISSBAT, Université de Tunis El Manar, 9 av. Dr. Zoheir Safi, 1006 Tunis (Tunisia); Gastebois, J. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Matériaux, UMR CNRS 6226, Université Rennes 1, Campus de Beaulieu, 263 av. Général Leclerc, 35042 Rennes Cedex (France); Pasturel, M., E-mail: mathieu.pasturel@univ-rennes1.fr [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Matériaux, UMR CNRS 6226, Université Rennes 1, Campus de Beaulieu, 263 av. Général Leclerc, 35042 Rennes Cedex (France); Belgacem, B. [Unité de Recherche de Chimie des Matériaux et de l’Environnement, ISSBAT, Université de Tunis El Manar, 9 av. Dr. Zoheir Safi, 1006 Tunis (Tunisia); Péron, I.; Gouttefangeas, F. [Centre de Microscopie Electronique à Balayage et microAnalyse, Université Rennes 1, Campus de Beaulieu, 263 av. Général Leclerc, 35042 Rennes Cedex (France); Ben Hassen, R. [Unité de Recherche de Chimie des Matériaux et de l’Environnement, ISSBAT, Université de Tunis El Manar, 9 av. Dr. Zoheir Safi, 1006 Tunis (Tunisia); and others

    2015-04-15

    Highlights: • The experimental isothermal section at 973 K of the Ce–Co–Al system is presented. • This section contains 5 ternary phases and 7 ternary extensions of pseudo-binaries. • DTA experiments are used to estimate the liquid areas. - Abstract: The Ce–Co–Al ternary phase diagram has been reinvestigated at 973 K by means of powder X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and differential thermal analyses. It contains 5 ternary phases (CeCo{sub 2}Al{sub 8}, Ce{sub 2}Co{sub 6}Al{sub 19}, CeCoAl{sub 4}, Ce{sub 3}Co{sub 3}Al{sub 4} and CeCoAl) as well as 7 extensions in the ternary field of pseudo-binaries (CeAl{sub 2−x}Co{sub x} with 0 ⩽ x ⩽ 0.18; CeCo{sub 2−x}Al{sub x} with 0 ⩽ x ⩽ 0.21; CeCo{sub 3−y}Al{sub y} with 0 ⩽ y ⩽ 0.20; Ce{sub 2}Co{sub 7−x}Al{sub x} with 0 ⩽ x ⩽ 0.73; Ce{sub 5}Co{sub 19−y}Al{sub y} with 0 ⩽ y ⩽ 0.20; CeCo{sub 5−x}Al{sub x} with 0 ⩽ x ⩽ 0.71 and Ce{sub 2}Co{sub 17−y}Al{sub y} with 0 ⩽ y ⩽ 2.2). Two liquid areas are present at the Al and Ce-rich corners of this isothermal section.

  18. Prediction of novel hard phases of Si{sub 3}N{sub 4}: First-principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Lin; Hu, Meng; Wang, Qianqian; Xu, Bo; Yu, Dongli; Liu, Zhongyuan; He, Julong, E-mail: hjl@ysu.edu.cn

    2015-08-15

    Exploration of novel hard metastable phases of silicon nitride was performed using a recently developed particle-swarm optimization method within the CALYPSO software package. Three potential hard metastable phases of t-Si{sub 3}N{sub 4}, m-Si{sub 3}N{sub 4}, and o-Si{sub 3}N{sub 4} were predicted. These phases are mechanically and dynamically stable at ambient pressure based on their elastic constants and phonon dispersions. t-Si{sub 3}N{sub 4} and m-Si{sub 3}N{sub 4} exhibit lower energies than γ-Si{sub 3}N{sub 4} at pressures below 2.5 GPa and 2.9 GPa, respectively, which promise that the formers could be obtained by quenching from γ-Si{sub 3}N{sub 4}. o-Si{sub 3}N{sub 4} is a better high-pressure metastable phase than CaTi{sub 2}O{sub 4}-type Si{sub 3}N{sub 4} proposed by Tatsumi et al. and it can come from the transition of γ-Si{sub 3}N{sub 4} under 198 GPa. The theoretical band gaps of t-Si{sub 3}N{sub 4}, m-Si{sub 3}N{sub 4}, and o-Si{sub 3}N{sub 4} at ambient pressure were 3.15 eV, 3.90 eV, and 3.36 eV, respectively. At ambient pressure, the Vickers hardness values of t-Si{sub 3}N{sub 4} (32.6 GPa), m-Si{sub 3}N{sub 4} (31.5 GPa), and o-Si{sub 3}N{sub 4} (36.1 GPa) are comparable to β-Si{sub 3}N{sub 4} and γ-Si{sub 3}N{sub 4}. With the pressure increasing, t-Si{sub 3}N{sub 4}, m-Si{sub 3}N{sub 4}, and o-Si{sub 3}N{sub 4} will change from the brittle to ductile state at about 15.7 GPa, 7.3 GPa and 28.9 GPa, respectively. - Graphical abstract: This figure shows the crystal structures of three Si{sub 3}N{sub 4} predicted in this manuscript, and left to right: t-Si{sub 3}N{sub 4}, m-Si{sub 3}N{sub 4} and o-Si{sub 3}N{sub 4}. - Highlights: • We explored three metastable phases of Si{sub 3}N{sub 4} — t-Si{sub 3}N{sub 4}, m-Si{sub 3}N{sub 4}, and o-Si{sub 3}N{sub 4}. • The enthalpies of t and m- are much lower than that of γ at ambient pressure. • ois one further high pressure phase than γ. • o-Si{sub 3}N{sub 4} is the most hardest phase in Si

  19. Ternary complex formation at mineral/solution interfaces

    International Nuclear Information System (INIS)

    Leckie, J.O.

    1995-01-01

    Adsorption of trace concentrations of radionuclides and heavy metals from aqueous solution is dependent on pH, absorbent and adsorbate concentration, and speciation of the metal in solution. In particular, complexation of metal ions by organic and inorganic ligands can dramatically alter adsorption behavior compared to ligand-free systems. The presence of complexing ligands can cause the formation of ''metal like'' or ''ligand like'' ternary surface complexes depending on whether adsorption of the ternary complex increases or decreases with increasing pH, respectively. Examples of ternary surface complexes behaving ''metal like'' include uranyl-EDTA surface complexes on goethite, neptunyl-EDTA surface complexes on hematite and neptunyl-humic surface complexes on gibbsite. Examples of ''ligand like'' ternary surface complexes include uranyl-carbonato and neptunyl-carbonato surface complexes on iron oxides. The effects of complex solutions and multimineralic systems are discussed. (authors). 39 refs., 16 figs., 8 tabs

  20. N=2 super - W3(2) algebra in superfields

    International Nuclear Information System (INIS)

    Krivonos, S.; Sorin, A.

    1995-05-01

    It is presented a manifestly N=2 supersymmetric formulation of N=2 super-W 3 (2) algebra (its classical version) in terms of the spin 1 unconstrained generating a N=2 superconformal subalgebra and the spins 1/2, 2 fermionic constrained supercurrents. It is considered a superfield reduction of N=2 super-W 3 (2) to N=2 super-W 3 and construct a family of evolution equations for which N=2 super-W 3 (2) provides the second Hamiltonian structure

  1. Compositional analysis of silicon nitride films on Si and GaAs by backscattering spectrometry and nuclear resonance reaction analysis

    International Nuclear Information System (INIS)

    Kumar, Sanjiv; Raju, V.S.

    2004-01-01

    This paper describes the application of proton and α-backscattering spectrometry for the determination of atomic ratio of Si to N in 1100-5000 A silicon nitride films on Si and GaAs. The conventional α-Rutherford backscattering spectrometry is suitable for the analysis of films on Si; it is rather inadequate for films on GaAs due to higher background from the substrate. It is shown that these films can be analysed by 14 N(α,α) 14 N scattering with 3.5 MeV α-particles. Proton elastic scattering with enhanced cross sections for 28 Si(p,p) 28 Si and 14 N(p,p) 14 N scatterings, is also suitable for analysing films on GaAs. However, the analysis of films on Si by this technique is difficult due to interferences between the signals of Si from the film and the substrate. In addition, the hydrogen content in films is determined by 1 H( 19 F,αγ) 16 O nuclear reaction analysis using the resonance at 6.4 MeV. The combination of backscattering spectrometry with nuclear reaction analysis provides compositional analysis of ternary Si 1-(x+y) N x H y films

  2. Discovery of a ternary pseudobrookite phase in the earth-abundant Ti-Zn-O system.

    Science.gov (United States)

    Perry, Nicola H; Stevanovic, Vladan; Lim, Linda Y; Mason, Thomas O

    2016-01-28

    We combine theory with experiment in searching for "missing", stable materials within the Zn-Ti-O chemical system, leading to the discovery of a new pseudobrookite phase, ZnxTi3-xO5-δ. This ternary system was chosen for (1) technological relevance, (2) earth abundance, and (3) the fact that many compounds in this system are predicted from enthalpies of formation to be borderline stable, suggesting an important role of entropic contributions in their stabilization and making this chemical system a perfect test bed for exploring the limits of theoretical predictions. The initial set of exploratory experimental syntheses, via sintering in evacuated ampoules and quenching, resulted in a single phase ZnxTi3-xO5-δ composition with x ≈ 0.6 and an almost stoichiometric oxygen content, as evaluated by X-ray fluorescence, energy dispersive spectroscopy, thermogravimetric analysis, and X-ray photoelectron spectroscopy. The theoretically calculated lowest energy crystal structure for the closest stoichiometric ZnTi5O10 composition matched that measured experimentally by synchrotron X-ray diffraction (allowing for differences attributable to cation disorder). The measured broad optical absorption, n-type electrical conductivity, and stability in acidic media are comparable to those of other ternary pseudobrookites and Ti-O Magnéli phases, suggesting comparable applicability as a robust electrode or catalyst support in electrochemical devices or water remediation. However, the new phase decomposes upon heating in air as it oxidizes. The success of the present approach to identify a "missing material" in an earth-abundant and applications-rich system suggests that future efforts to experimentally realize and theoretically confirm missing materials in this and similar systems are warranted, both scientifically and technologically.

  3. Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures

    International Nuclear Information System (INIS)

    Choi, Bum Ho; Lee, Jong Ho

    2014-01-01

    We investigated the water vapor permeation barrier properties of 30-nm-thick SiN/SiCN/SiN nanolaminated multilayer structures grown by plasma enhanced chemical vapor deposition at 7 mTorr. The derived water vapor transmission rate was 1.12 × 10 −6 g/(m 2 day) at 85 °C and 85% relative humidity, and this value was maintained up to 15 000 h of aging time. The X-ray diffraction patterns revealed that the nanolaminated film was composed of an amorphous phase. A mixed phase was observed upon performing high resolution transmission electron microscope analysis, which indicated that a thermodynamically stable structure was formed. It was revealed amorphous SiN/SiCN/SiN multilayer structures that are free from intermixed interface defects effectively block water vapor permeation into active layer

  4. Performance Estimation for Lowpass Ternary Filters

    Directory of Open Access Journals (Sweden)

    Brenton Steele

    2003-11-01

    Full Text Available Ternary filters have tap values limited to −1, 0, or +1. This restriction in tap values greatly simplifies the multipliers required by the filter, making ternary filters very well suited to hardware implementations. Because they incorporate coarse quantisation, their performance is typically limited by tap quantisation error. This paper derives formulae for estimating the achievable performance of lowpass ternary filters, thereby allowing the number of computationally intensive design iterations to be reduced. Motivated by practical communications systems requirements, the performance measure which is used is the worst-case stopband attenuation.

  5. Activity of Aniline Methylation over Fe-Cu-Cr Ternary Spinel Systems

    Directory of Open Access Journals (Sweden)

    Reni George

    2014-03-01

    Full Text Available A series of spinels having thegeneral formula CuCr2-xFexO4 with x=0.25,0.75, 1.25, 1.75 were prepared by co-precipitation method. The catalysts werecharacterized by various physico-chemical methods like XRD, BET, UV-DRS, SEM,EDX, TPD etc. The reaction of aniline with methanol was studied in a fixed-bedreactor system as a potential source for the production of various methylanilines. It was observed that systems possessing low ‘x’ values are highlyselective and active for N-monoalkylation of aniline leading toN-methylaniline. Reaction parameters were properly varied to optimize thereaction conditions for obtaining N-methylaniline selectively and in betteryield. Among the systems CuCr1.75Fe0.25O4 isremarkable due to its very high activity and excellent stability. Under theoptimized conditions N-methylaniline selectivity exceeded 91%. CuCr1.25Fe0.75O4gives better conversion than CuCr1.75Fe0.25O4in CuCr2-xFexO4 series. The Lewis acid sitesof the catalysts are mainly responsible for the good catalytic performance. © 2014 BCREC UNDIP. All rights reservedSubmitted: 18th July 2013; Revised: 5th November 2013; Accepted: 1st December 2013[How to Cite: George, R., George, K., Sugunan, S. (2014. Activity of Aniline Methylation over Fe-Cu-Cr Ternary Spinel Systems. Bulletin of Chemical Reaction Engineering & Catalysis, 9 (1: 39-44. (doi:10.9767/bcrec.9.1.5169.39-44][Permalink/DOI: http://dx.doi.org/10.9767/bcrec.9.1.5169.39-44] 

  6. „Samopublikowanie”: stara metoda – nowy sens w dobie e-science

    Directory of Open Access Journals (Sweden)

    Piotr Nowak

    2009-01-01

    Full Text Available Poruszane w tekście zagadnienia wiążą się z problematyką budowy nowych systemów informacyjnych w nauce, które w piśmiennictwie określa się mianem e-library, library 2.0, e-science, Web 2.0 etc. Artykuł mówi o koniecznych zmianach zachowań ludzi nauki w zakresie publikowania w kontekście wspomnianych kierunków rozwoju komunikacji naukowej. Autor przewiduje, że budowa nowych systemów informacyjnych spopularyzuje samopublikację (self-publishing tekstów naukowych, która zdynamizuje rozwój repozytoriów o otwartym dostępie (open access. Zjawisko samopublikacji wpłynie także na zmianę metod oceny publikacji naukowych. Ich ocena będzie mogła się dokonywać przez automatyczne obliczanie cytowalności. Stopniem uzyskiwanych cytowań będzie można także parametryzować teksty opublikowane przez autorów w repozytoriach już po pozytywnej ocenie peer review. Ponadto, jak twierdzi autor, zjawisko samopublikacji powinno spopularyzować blogosferę w nauce, a w tym kontekście z pewnością pojawi się nawyk bezpośredniego komentowania wzmianek uczonych o własnych pracach badawczych przez specjalistów reprezentujących te same dyscypliny. Taka wymiana informacji będzie możliwa dzięki rozpowszechnieniu się samopublikacji i powinna w pełni zastąpić organizowanie drogich konferencji naukowych, w których udział bierze najczęściej tylko część środowiska. Autor uważa, że na marginesie zasygnalizowanych zmian pojawią się także zjawiska niepożądane, których przejawem z pewnością będzie „wykluczenie” najstarszych generacji uczonych, z uwagi na niemożność opanowania przez nich nowych technologii.

  7. Angular momentum effects in the fusion of "2"8Si+"2"8Si system

    International Nuclear Information System (INIS)

    Choudhary, Atul; Verma, Dalip Singh

    2016-01-01

    In the heavy ion fusion reactions the interaction potential plays an important role as it provides the characteristics like barrier height, barrier position and barrier width in the calculations of fusion cross section. This means different types of interaction potential gives different fusion cross sections or potential parameters are predicted w.r.t the experimental data. In the literature, number of formalism for the calculation of fusion cross sections assumes that the potential barrier position and width is independent of angular momentum (ℓ). However, all the three potential characteristics are ℓ-dependent and are used in the calculation the fusion cross section for a positive Q-value system, "2"8Si+"2"8Si (Q = 10.9 MeV) and is compared with the recently measured fusion cross section

  8. The isothermal section of Gd–Ni–Si system at 1070 K

    Energy Technology Data Exchange (ETDEWEB)

    Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Knotko, A.V. [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Geological Faculty Moscow State University, Leninskie Gory, Moscow 119992 (Russian Federation); Manfrinetti, P.; Pani, M.; Provino, A. [Department of Chemistry, University of Genova, Via Dodecaneso 31, 16146 Genova (Italy); Institute SPIN-CNR, C. Perrone 24, 16152 Genova (Italy); Nirmala, R. [Indian Institute of Technology Madras, Chennai 600036 (India); Quezado, S.; Malik, S.K. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59082-970 (Brazil)

    2016-03-15

    12.8}Si{sub 1−4.2} (Th{sub 2}Zn{sub 17}-type), GdNi{sub 6.6}Si{sub 6} (GdNi{sub 7}Si{sub 6}-type), Gd{sub 3}Ni{sub 8}Si (Y{sub 3}Co{sub 8}Si-type) and Gd{sub 3}Ni{sub 11.5}Si{sub 4.2} (Gd{sub 3}Ru{sub 4}Ga{sub 12}-type) compounds have been detected in Gd–Ni–Si system at 1070 K. Quasi-binary phases, solid solutions, were detected at 1070 K to be formed by the binaries GdNi{sub 5}, GdNi{sub 3}, GdNi{sub 2}, GdNi, GdSi{sub 2} and GdSi{sub 1.67}; while no detectable solubility was observed for the other binary compounds of the Gd–Ni–Si system. Magnetic properties of the GdNi{sub 6}Si{sub 6}, GdNi{sub 6.6}Si{sub 6} and Gd{sub 3}Ni{sub 11.5}Si{sub 4.2} compounds have also been investigated and are here reported. - Highlights: • Gd–Ni–Si isothermal section was obtained at 1070 K. • Sixteen known ternary gadolinium nickel silicides were confirmed in Gd–Ni–Si. • Five new gadolinium nickel silicides were detected in Gd–Ni–Si. • GdNi{sub 6}Si{sub 6}, GdNi{sub 6.6}Si{sub 6} and Gd{sub 3}Ni{sub 11.5}Si{sub 4.2} show ferromagnetic-type ordering.

  9. Wybrane uwarunkowania zadowolenia ze szkoły rodziców dzieci uczących się w szkołach podstawowych

    Directory of Open Access Journals (Sweden)

    Radosław Kaczan

    2012-12-01

    Full Text Available Artykuł prezentuje wyniki przeprowadzonego w 2011 r. badania kwestionariuszowego dotyczącego opinii rodziców na temat edukacji przedszkolnej i wczesnoszkolnej. Przedmiotem analiz było zadowolenie z pracy szkoły rodziców, którzy mają przynajmniej jedno dziecko uczęszczające do szkoły podstawowej. Stworzono wskaźnik zadowolenia obejmujący aspekty edukacyjne, opiekuńcze oraz pracę nauczycieli. Następnie na podstawie analiz różnych sposobów organizacji pracy z dziećmi w szkole, wyłoniono pięć czynników opisujących te sposoby: (1 motywacja do nauki; (2 aktywne formy zajęć; (3 dydaktyka; (4 relacje z rówieśnikami; (5 zajęcia dodatkowe. W analizach regresji sprawdzano związki wyłonionych czynników z ogólnym poziomem zadowolenia rodziców ze szkoły. Okazało się, że najsilniejszymi predyktorami zadowolenia są: motywacja dziecka do nauki (czynnik 1 i organizowanie atrakcyjnych, aktywnych form zajęć (czynnik 2. Stwierdzono także istnienie istotnej, choć słabej, zależności pomiędzy zadowoleniem rodzica ze szkoły, a jego wykształceniem.

  10. Preparation of meloxicam-β-cyclodextrin-polyethylene glycol 6000 ternary system: characterization, in vitro and in vivo bioavailability.

    Science.gov (United States)

    Radia, Ourezki; Rogalska, Ewa; Moulay-Hassane, Guermouche

    2012-01-01

    Ternary complexes of meloxicam (ML), a poorly water-soluble anti-inflammatory drug, with β-cyclodextrin (βCD) and polyethylene glycol (PEG) 6000 were prepared from an equimolar (ML-βCD) and 10% of PEG. Characterization of the ternary complex was carried out by differential scanning calorimetry and X-ray diffractometry. The solubility of ML increased as a function of increasing the concentration of βCD and PEG 6000. Ternary system increased significantly ML solubility in water. Ternary complexes improved drug release compared with ML and ML-βCD. The oral bioavailability of ML-βCD-PEG was investigated by administration to rat and compared with ML and ML-βCD. The results confirmed that the oral bioavailability of ML was significantly improved by complexation with βCD in the presence of PEG.

  11. Electrical evaluation of crack generation in SiN_x and SiO_xN_y thin-film encapsulation layers for OLED displays

    International Nuclear Information System (INIS)

    Park, Eun Kil; Kim, Sungmin; Heo, Jaeyeong; Kim, Hyeong Joon

    2016-01-01

    Highlights: • Crack generation in encapsulation layers were detected by leakage current. • Atomic concentration of SiO_xN_y films affected the bending reliability. • The shapes of the crack tips were affected by the stoichiometry of the SiO_xN_y films. - Abstract: By measuring leakage current density, we detected crack generation in silicon nitride (SiN_x) and silicon oxynitride (SiO_xN_y) thin-film encapsulation layers, and correlated with the films’ water vapor permeability characteristics. After repeated bending cycles, both the changes in water vapor transmission rate and leakage current density were directly proportional to the crack density. Thick SiN_x films had better water vapor barrier characteristics in their pristine state, but cyclic loading led to fast failure. Varying the atomic concentration of the SiO_xN_y films affected their bending reliability. We attribute these differences to changes in the shape of the crack tip as the oxygen content varies.

  12. Benthic megafauna at deep-sea study areas W-N and E-N

    International Nuclear Information System (INIS)

    Keller, C.H.

    1985-01-01

    Photographs were utilized determine what megafaunal organisms live at areas E-N and W-N and in what densities. Life history characteristics gleaned from the literature as well as from the photographs are presented to establish these organisms' roles in oceanic food chains. In area W-N, the most abundant megafaunal group is the echinoderms. These are the asteroids, crinoids, echinoids, holothuroids, and ophiuroids. Dominant amongst the echinoderms are the ophiuroids, which account for about 46% of the total density. Taxonomic and photographic resolution at area E-N are both poor. Numbers of megafaunal organisms cannot be directly compared between areas E-N and W-N. Differing photographic techniques severely limit comparisons between the two areas. Nevertheless, megafauna seen at area E-N is apparently less dense and probably less diverse than at area W-N. 30 references, 8 figures, 8 tables

  13. On compensation in Si-doped AlN

    Science.gov (United States)

    Harris, Joshua S.; Baker, Jonathon N.; Gaddy, Benjamin E.; Bryan, Isaac; Bryan, Zachary; Mirrielees, Kelsey J.; Reddy, Pramod; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.

    2018-04-01

    Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich AlGaN, is critical to realizing next-generation applications in high-power electronics and deep UV light sources. Silicon is not a hydrogenic donor in AlN as it is in GaN; despite this, the carrier concentration should be controllable, albeit less efficiently, by increasing the donor concentration during growth. At low doping levels, an increase in the Si content leads to a commensurate increase in free electrons. Problematically, this trend does not persist to higher doping levels. In fact, a further increase in the Si concentration leads to a decrease in free electron concentration; this is commonly referred to as the compensation knee. While the nature of this decrease has been attributed to a variety of compensating defects, the mechanism and identity of the predominant defects associated with the knee have not been conclusively determined. Density functional theory calculations using hybrid exchange-correlation functionals have identified VAl+n SiAl complexes as central to mechanistically understanding compensation in the high Si limit in AlN, while secondary impurities and vacancies tend to dominate compensation in the low Si limit. The formation energies and optical signatures of these defects in AlN are calculated and utilized in a grand canonical charge balance solver to identify carrier concentrations as a function of Si content. The results were found to qualitatively reproduce the experimentally observed compensation knee. Furthermore, these calculations predict a shift in the optical emissions present in the high and low doping limits, which is confirmed with detailed photoluminescence measurements.

  14. Rewolucja i przewrót w historiografii. Bolszewizm w nowej perspektywie

    Directory of Open Access Journals (Sweden)

    Damian Winczewski

    2016-06-01

    Full Text Available Celem artykułu jest omówienie serii esejów Johna Marota zebranych w książce The October Revolution in Prospect and Retrospect oraz zaprezentowanie tych tez autora, które zdają się wyróżniać na tle dotychczasowej historiografii dotyczącej Rewolucji Październikowej i polityki partii bolszewickiej. W ramach tego omówienia próbujemy zestawić poglądy autora z dotychczasowymi interpretacjami wydarzeń, do których treści zawarte w jego pracy się odnoszą i podjąć się oceny tego, na ile, po pierwsze, argumenty Marota wydają się być trafne, a po drugie, na ile są one rzeczywiście nowatorskie.

  15. Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

    Science.gov (United States)

    Samanta, Piyas

    2017-09-01

    We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

  16. Prediction of phase equilibria and thermal analysis in the Bi-Cu-Pb ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Manasijevic, Dragan [University of Belgrade, Technical Faculty, VJ 12, 19210 Bor (Serbia); Mitovski, Aleksandra, E-mail: amitovski@tf.bor.ac.rs [University of Belgrade, Technical Faculty, VJ 12, 19210 Bor (Serbia); Minic, Dusko [University of Pristina, Faculty of Technical Sciences, 38220 Kosovska Mitrovica (Serbia); Zivkovic, Dragana; Marjanovic, Sasa [University of Belgrade, Technical Faculty, VJ 12, 19210 Bor (Serbia); Todorovic, Radisa [Institute of Mining and Metallurgy, Zeleni Bulevar 35, 19210 Bor (Serbia); Balanovic, Ljubisa [University of Belgrade, Technical Faculty, VJ 12, 19210 Bor (Serbia)

    2010-05-20

    The knowledge about phase diagram of the Bi-Cu-Pb ternary system is of importance in development of copper-lead based bearing materials, soldering and in refining of copper and lead. In this work, the phase diagram of the Bi-Cu-Pb ternary system was calculated by the CALPHAD method using binary thermodynamic parameters included in the COST 531 database. The results include liquidus projection, invariant equilibria and three vertical sections with molar ratio Cu:Pb = 1, Cu:Pb = 1:3 and Bi:Cu = 1. Alloys, with compositions along three predicted vertical sections, were measured using differential scanning calorimetry (DSC). The experimentally determined phase transition temperatures were compared with calculated results and good mutual agreement was noticed.

  17. Prediction of phase equilibria and thermal analysis in the Bi-Cu-Pb ternary system

    International Nuclear Information System (INIS)

    Manasijevic, Dragan; Mitovski, Aleksandra; Minic, Dusko; Zivkovic, Dragana; Marjanovic, Sasa; Todorovic, Radisa; Balanovic, Ljubisa

    2010-01-01

    The knowledge about phase diagram of the Bi-Cu-Pb ternary system is of importance in development of copper-lead based bearing materials, soldering and in refining of copper and lead. In this work, the phase diagram of the Bi-Cu-Pb ternary system was calculated by the CALPHAD method using binary thermodynamic parameters included in the COST 531 database. The results include liquidus projection, invariant equilibria and three vertical sections with molar ratio Cu:Pb = 1, Cu:Pb = 1:3 and Bi:Cu = 1. Alloys, with compositions along three predicted vertical sections, were measured using differential scanning calorimetry (DSC). The experimentally determined phase transition temperatures were compared with calculated results and good mutual agreement was noticed.

  18. Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si{sub 3}N{sub 4}/DLC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Roman, W S; Riascos, H [Grupo Plasma, Laser y Aplicaciones, Universidad Tecnologica de Pereira (Colombia); Caicedo, J C [Grupo de PelIculas Delgadas, Universidad del Valle, Cali (Colombia); Ospina, R [Laboratorio de Plasma, Universidad Nacional de Colombia, sede Manizales (Colombia); Tirado-MejIa, L, E-mail: hriascos@utp.edu.c [Laboratorio de Optoelectronica, Universidad del Quindio (Colombia)

    2009-05-01

    Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si{sub 3}N{sub 4} substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm{sup -2}, 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm{sup -1} for B - N bonding and bands around 1700 cm{sup -1} associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), alpha-Si{sub 3}N{sub 4} (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si{sub 3}N{sub 4}/DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

  19. Kinetic study of lithium-cadmium ternary amalgam decomposition

    International Nuclear Information System (INIS)

    Cordova, M.H.; Andrade, C.E.

    1992-01-01

    The effect of metals, which form stable lithium phase in binary alloys, on the formation of intermetallic species in ternary amalgams and their effect on thermal decomposition in contact with water is analyzed. Cd is selected as ternary metal, based on general experimental selection criteria. Cd (Hg) binary amalgams are prepared by direct contact Cd-Hg, whereas Li is formed by electrolysis of Li OH aq using a liquid Cd (Hg) cathodic well. The decomposition kinetic of Li C(Hg) in contact with 0.6 M Li OH is studied in function of ageing and temperature, and these results are compared with the binary amalgam Li (Hg) decomposition. The decomposition rate is constant during one hour for binary and ternary systems. Ageing does not affect the binary systems but increases the decomposition activation energy of ternary systems. A reaction mechanism that considers an intermetallic specie participating in the activated complex is proposed and a kinetic law is suggested. (author)

  20. GaN growth via HVPE on SiC/Si substrates: growth mechanisms

    Science.gov (United States)

    Sharofidinov, Sh Sh; Redkov, A. V.; Osipov, A. V.; Kukushkin, S. A.

    2017-11-01

    The article focuses on the study of GaN thin film growth via chloride epitaxy on SiC/Si hybrid substrate. SiC buffer layer was grown by a method of substitution of atoms, which allows one to reduce impact of mechanical stress therein on subsequent growth of III-nitride films. It is shown, that change in GaN growth conditions leads to change in its growth mechanism. Three mechanisms: epitaxial, spiral and stepwise growth are considered and mechanical stresses are estimated via Raman spectroscopy.

  1. The isothermal section at 500 deg. C of the Gd-Tb-Ga ternary system

    International Nuclear Information System (INIS)

    Li, J.Q.; Jian, Y.X.; Ao, W.Q.; Zhuang, Y.H.; He, W.

    2006-01-01

    Phase equilibria in the Gd-Tb-Ga ternary system at 500 deg. C were investigated by X-ray powder diffraction and differential scanning calorimetry. The binary compounds, Gd 5 Ga 3 , Gd 3 Ga 2 , GdGa, GdGa 2 , Tb 5 Ga 3 , TbGa, TbGa 2 and TbGa 3 have been confirmed at 500 deg. C. No ternary compound was found in this system. The isothermal section of this system at 500 deg. C was constructed. It is composed of 7 single-phase regions, 8 two-phase regions and 2 three-phase regions. Four ternary continuous solid solutions (Gd, Tb), (Gd, Tb) 5 Ga 3 , (Gd, Tb)Ga, (Gd, Tb)Ga 2 were formed in this isothermal section. The maximum solid solubilities of Ga in (Gd, Tb) at 500 deg. C is 5.0 at.%. The homogeneity range of (Gd, Tb)Ga 2 is from 20 to 33.3 at.% Ga in Gd-Ga side but limited in Tb-Ga side. The solid solubilities of Ga in the other phases cannot be detected. The Curie temperatures of the Gd 0.6 Tb 0.4-x Ga x alloys increase from 270 to 298 K as x increases from 0 to 0.03

  2. Effect of Si on the glass-forming ability, thermal stability and magnetic properties of Fe-Co-Zr-Mo-W-B alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.-M. [Institute for Metallic Materials, IFW Dresden, P.O. 270016, Dresden D-01171 (Germany); Key Lab of Liquid Structure and Heredity of Materials, Shandong University, Jinan 250061 (China); Gebert, A. [Institute for Metallic Materials, IFW Dresden, P.O. 270016, Dresden D-01171 (Germany)], E-mail: a.gebert@ifw-dresden.de; Roth, S.; Kuehn, U.; Schultz, L. [Institute for Metallic Materials, IFW Dresden, P.O. 270016, Dresden D-01171 (Germany)

    2008-07-14

    This paper presents investigations on the effect of Si on the glass-forming ability, thermal stability and magnetic properties of the Fe-Co-Zr-Mo-W-B samples (group I: Fe{sub 60}Co{sub 8}Zr{sub 10}Mo{sub 5}W{sub 2}B{sub 15-x}Si{sub x}, 1 {<=} x {<=} 4; group II: Fe{sub 60}Co{sub 8}Zr{sub 10-x}Mo{sub 5}W{sub 2}B{sub 15}Si{sub x}, 0 {<=} x {<=} 4; group III: Fe{sub 60}Co{sub 8}Zr{sub 8}Mo{sub 5}W{sub 2}B{sub 17-x}Si{sub x}, 0 {<=} x {<=} 2) prepared by melt spinning, injection casting, and centrifugal casting methods. It is found that the glass-forming ability (GFA) of the alloys in group I is more deteriorated than that in group II, and that the alloys in group III can be cast into the rods of 1-3 mm diameter without crystalline reflections in their XRD patterns. For the amorphous ribbons and rods, a non-monotonic change of the nearest neighbour distance r{sub 1} with increasing Si content c{sub Si} was detected, which is parallel to that of the glass transition and crystallization temperatures T{sub g} and T{sub x}, but opposite to that of the magnetization at room temperature M{sub RT} and the Curie temperature T{sub c}. This correlation can be interpreted by a structure model presuming that iron atoms appear simultaneously in two types of local structures in the amorphous samples.

  3. A computational study on the energetics and mechanisms for the dissociative adsorption of SiH{sub x}(x = 1–4) on W(1 1 1) surface

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Y.H.; Raghunath, P.; Lin, M.C., E-mail: chemmcl@emory.edu

    2016-01-30

    Graphical abstract: - Highlights: • Behavior of the SiH{sub x} species on the W surface under cat-CVD conditions. • The adsorption and dissociation mechanisms of SiH{sub x}(x = 1–4) species on W(1 1 1) surface. • H-migration to its neighboring W atoms is more favorable compared to H{sub 2} elimination. - Abstract: The adsorption and dissociation mechanisms of SiH{sub x}(x = 1–4) species on W(1 1 1) surface have been investigated by using the periodic density functional theory with the projector-augmented wave approach. The adsorption of all the species on four surface sites: top (T), bridge (B), shallow (S), and deep (D) sites have been analyzed. For SiH{sub 4} on a top site, T-SiH{sub 4(a)}, it is more stable with an adsorption energy of 2.6 kcal/mol. For SiH{sub 3}, the 3-fold shallow site is most favorable with adsorption energy of 46.0 kcal/mol. For SiH{sub 2}, its adsorption on a bridge site is most stable with 73.0 kcal/mol binding energy, whereas for SiH and Si the most stable adsorption configurations are on 3-fold deep sites with very high adsorption energies, 111.8 and 134.7 kcal/mol, respectively. The potential energy surfaces for the dissociative adsorption of all SiH{sub x} species on the W(1 1 1) surface have been constructed using the CINEB method. The barriers for H-atom migration from SiH{sub x(a)} to its neighboring W atoms, preferentially on B-sites, were predicted to be 0.4, 1.0, 4.5 and, 8.0 kcal/mol, respectively, for x = 4, 3, 2, and 1, respectively. The adsorption energy of the H atom on a bridge site on the clean W(1 1 1) surface was predicted to be 65.9 kcal/mol, which was found to be slightly affected by the co-adsorption of SiH{sub x−1} within ± 1 kcal/mol.

  4. Effect of SiC buffer layer on GaN growth on Si via PA-MBE

    Science.gov (United States)

    Kukushkin, S. A.; Mizerov, A. M.; Osipov, A. V.; Redkov, A. V.; Telyatnik, R. S.; Timoshnev, S. N.

    2017-11-01

    The study is devoted to comparison of GaN thin films grown on SiC/Si substrates made by the method of atoms substitution with the films grown directly on Si substrates. The growth was performed in a single process via plasma assisted molecular beam epitaxy. The samples were studied via optical microscopy, Raman spectroscopy, ellipsometry, and a comparison of their characteristics was made. Using chemical etching in KOH, the polarity of GaN films grown on SiC/Si and Si substrates was determined.

  5. Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors

    International Nuclear Information System (INIS)

    Tongbram, B.; Shetty, S.; Ghadi, H.; Adhikary, S.; Chakrabarti, S.

    2015-01-01

    We investigate and compare the performance of 30 layers strain-coupled quantum dot (SCQD) infrared photodetectors capped with one of two different layers: a quaternary (In 0.21 Al 0.21 Ga 0.58 As) or ternary (In 0.15 Ga 0.85 As) alloy of 30 Aa and a GaAs layer with a thickness of 120-150 Aa. Measurements of optical properties, spectral responsivity, and cross-sectional transmission electron microscopy were conducted. Results showed that quaternary capping yielded more superior multilayer QD infrared photodetectors than ternary capping. Quaternary capping resulted in enhanced dot size, order, and uniformity of the QD array. The presence of Al in the capped layer helped in the reduction in dark current density and spectral linewidth as well as led to higher electron confinement of the QDs and enhanced device detectivity. The vertically ordered SCQD system with quaternary capping exhibited higher peak detectivity (∝10 10 cm Hz 1/2 /W) than that with ternary capping (∝10 7 cm Hz 1/2 /W). In addition, a very low noise current density of ∝10 -16 A/cm 2 Hz 1/2 at 77 K was achieved with quaternary-capped QDs. (orig.)

  6. Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD

    International Nuclear Information System (INIS)

    Wang Yong; Yu Nai-Sen; Li Ming; Lau Kei-May

    2011-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) are grown on 2-inch Si (111) substrates by MOCVD. The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth. The top 1.0μm GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface. The XRD results show that GaN(002) FWHM is 480 arcsec and GaN(102) FWHM is 900 arcsec. The AGaN/GaN HEMTs with optimized and non-optimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized. For the dc characteristics of the device with optimized AlGaN/AlN interlayer, maximum drain current density I dss of 737mA/mm, peak transconductance G m of 185mS/mm, drain leakage current density I ds of 1.7μA/mm, gate leakage current density I gs of 24.8 μA/mm and off-state breakdown voltage V BR of 67 V are achieved with L g /W g /L gs /L gd = 1/10/1/1 μm. For the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer, current gain cutoff frequency f T of 8.3 GHz and power gain cutoff frequency f max of 19.9 GHz are achieved with L g /W g /L gs /L gd = 1/100/1/1 μm. Furthermore, the best rf performance with f T of 14.5 GHz and f max of 37.3 GHz is achieved with a reduced gate length of 0.7μm. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si1-xCx nanocomposites mixed with Si nanoparticles and C atoms

    International Nuclear Information System (INIS)

    Shin, J.W.; Oh, D.H.; Kim, T.W.; Cho, W.J.

    2009-01-01

    Bright-field transmission electron microscopy (TEM) images, high-resolution TEM (HRTEM) images, and fast-Fourier transformed electron-diffraction patterns showed that n-butyl terminated Si nanoparticles were aggregated. The formation of Si 1-x C x nanocomposites was mixed with Si nanoparticles and C atoms embedded in a SiO 2 layer due to the diffusion of C atoms from n-butyl termination shells into aggregated Si nanoparticles. Atomic force microscopy (AFM) images showed that the Si 1-x C x nanocomposites mixed with Si nanoparticles and C atoms existed in almost all regions of the SiO 2 layer. The formation mechanism of Si nanoparticles and the transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si 1-x C x nanocomposites mixed with Si nanoparticles and C atoms are described on the basis of the TEM, HRTEM, and AFM results. These results can help to improve the understanding of the formation mechanism of Si nanoparticles.

  8. Structure and wear behavior of AlCrSiN-based coatings

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yun [School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Chengdu Tool Research Institute Co., Ltd., Chengdu 610500 (China); Du, Hao [School of Manufacturing Science and Engineering, Sichuan University, Chengdu 610065 (China); Chen, Ming, E-mail: mchen@sjtu.edu.cn [School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Yang, Jun [Chengdu Tool Research Institute Co., Ltd., Chengdu 610500 (China); Xiong, Ji [School of Manufacturing Science and Engineering, Sichuan University, Chengdu 610065 (China); Zhao, Haibo [The Analysis and Testing Centre, Sichuan University, Chengdu 610065 (China)

    2016-05-01

    Graphical abstract: - Highlights: • AlCrSiN based coating showed amorphous structure. • AlCrSiN/Me{sub x}N coatings obtained better wear resistance. • Molybdenum and niobium increased the coating hardness and wear resistance. - Abstract: AlCrN, AlCrSiCN, AlCrSiN/MoN, and AlCrSiN/NbN coatings have been deposited on high-polished WC–Co cemented carbide substrate and tools by mid-frequency magnetron sputtering in Ar/N{sub 2} mixtures. Al{sub 0.6}Cr{sub 0.4}, Al{sub 0.6}Cr{sub 0.3}Si{sub 0.1}, and C/Mo/Nb targets were used during the deposition. The microstructure and mechanical properties of as-deposited coatings were investigated. Investigations of the wear behaviors of coated tools were also performed. The results showed that cubic structure was formed in the coatings. Broader CrAlN (1 1 1) and (2 0 0) peaks without SiN{sub x} peak were formed in the AlCrSiN/Me{sub x}N coatings, which showed a nanocomposited structure. Meanwhile, according to SEM micrographs, AlCrN exhibited a columnar structure, while, AlCrSiCN, AlCrSiN/MoN, and AlCrSiN/NbN coatings showed nanocrystalline morphology. The nano-multilayered coatings performed higher hardness, H/E, and H{sup 3}/E{sup 2} ratios compared with AlCrN coating. Through the Rockwell adhesion test, all the coatings exhibited adhesion strength quality HF1. After turning Inconel 718 under dry condition, the nano-multilyered coatings showed better wear resistance than AlCrN coating. Due to the molybdenum and niobium in the coating, AlCrSiN/MoN and AlCrSiN/NbN coatings showed the best wear resistance.

  9. All-optical symmetric ternary logic gate

    Science.gov (United States)

    Chattopadhyay, Tanay

    2010-09-01

    Symmetric ternary number (radix=3) has three logical states (1¯, 0, 1). It is very much useful in carry free arithmetical operation. Beside this, the logical operation using this type of number system is also effective in high speed computation and communication in multi-valued logic. In this literature all-optical circuits for three basic symmetrical ternary logical operations (inversion, MIN and MAX) are proposed and described. Numerical simulation verifies the theoretical model. In this present scheme the different ternary logical states are represented by different polarized state of light. Terahertz optical asymmetric demultiplexer (TOAD) based interferometric switch has been used categorically in this manuscript.

  10. Strain distribution in freestanding Si/Si{sub x}N{sub y} membranes studied by transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Hongye, E-mail: hongye18@mm.kyushu-u.ac.j [Faculty of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Ikeda, Ken-ichi; Hata, Satoshi; Nakashima, Hideharu [Faculty of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Wang, Dong; Nakashima, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

    2010-09-30

    Strain was induced in a bridge-shaped freestanding Si membrane (FSSM) by depositing an amorphous Si{sub x}N{sub y} layer to surround the Si membrane. Convergent beam electron diffraction revealed that compressive strain is distributed uniformly along the horizontal direction in Si{sub x}N{sub y}-deposited FSSM. On the other hand, strain decreases to almost zero at the ends of the FSSM, where the Si{sub x}N{sub y} layer beneath the Si layer is replaced by a SiO{sub 2} buried oxide layer.

  11. Structural stability and elastic properties of L12 Co3(Ga,W) precipitate from first-principle calculations

    International Nuclear Information System (INIS)

    Yao Qiang; Zhu Yuhong; Wang Yan

    2011-01-01

    Ultrasoft pseudopotential within a generalized gradient approximation was employed to study the structural stability, electronic structure, and elastic properties of ternary Co 3 (Ga,W) precipitate. The Young's and shear moduli of the polycrystals containing the Co 3 (Ga,W) precipitate were calculated using the Voigt-Reuss-Hill averaging scheme. Results show that the stable ternary Co 3 (Ga,W) compound has the L1 2 structure, and is ductile in nature. The structural stability of the Co 3 (Ga,W) compound is discussed together with the calculated electronic structure.

  12. Influence of La in xPBBiN of ternary nanoceramic composite (1-x0.5PMN-0.5PZT-xPBBiN system by mechanic al activatio n technique for dielectric and piezoelectric properties

    Directory of Open Access Journals (Sweden)

    K. CHANDRAMOULI

    2011-06-01

    Full Text Available (1-x[0.5Pb(Mg0.33Nb0.67O3-0.5Pb(Zr0.53Ti0.47O3]-x[Pb0.557Ba0.38La0.022Bi0.02Nb2O6] with both perovskite and tungsten bronze structured composite have been synthesized through mechanical activation technique. The strong influence of lanthanum addition to the lead-barium-bismuth-niobate (xPBLBiN ceramics in perovskite structured (1-xPMN-PZT on structural and functional properties is confirmed. X-ray diffraction patterns studies showed that these complex composites consisted of perovskite Cubic with tungsten bronze Orthorhombic phases. La modification in PBBiN of a ternary system (1-xPMN-PZTxPBBiN revealed intensified orthorhombicity. As La increased the dielectric and piezoelectric properties tremendously increased in (1-xPMN-PZT-xPBLBiN nanoceramic composite. The optimum dielectric and piezoelectric properties (εRT = 2931, kp = 0.461 and d33 = 428 pC/N were found in x =0.4 composite. We achieved novel nanocomposites synthesized by high energy ball milling method and having binary structures in a single composite with excellent functional properties that can be used for energy harvesting applications.

  13. Separation of stress-free AlN/SiC thin films from Si substrate

    International Nuclear Information System (INIS)

    Redkov, A V; Osipov, A V; Mukhin, I S; Kukushkin, S A

    2016-01-01

    We separated AlN/SiC film from Si substrate by chemical etching of the AlN/SiC/Si heterostructure. The film fully repeats the size and geometry of the original sample and separated without destroying. It is demonstrated that a buffer layer of silicon carbide grown by a method of substitution of atoms may have an extensive hollow subsurface structure, which makes it easier to overcome the differences in the coefficients of thermal expansion during the growth of thin films. It is shown that after the separation of the film from the silicon substrate, mechanical stresses therein are almost absent. (paper)

  14. Phase equilibria in the Mo-Fe-P system at 800 °C and structure of ternary phosphide (Mo(1-x)Fe(x))3P (0.10 ≤ x ≤ 0.15).

    Science.gov (United States)

    Oliynyk, Anton O; Lomnytska, Yaroslava F; Dzevenko, Mariya V; Stoyko, Stanislav S; Mar, Arthur

    2013-01-18

    Construction of the isothermal section in the metal-rich portion (ternary phases: (Mo(1-x)Fe(x))(2)P (x = 0.30-0.82) and (Mo(1-x)Fe(x))(3)P (x = 0.10-0.15). The occurrence of a Co(2)Si-type ternary phase (Mo(1-x)Fe(x))(2)P, which straddles the equiatomic composition MoFeP, is common to other ternary transition-metal phosphide systems. However, the ternary phase (Mo(1-x)Fe(x))(3)P is unusual because it is distinct from the binary phase Mo(3)P, notwithstanding their similar compositions and structures. The relationship has been clarified through single-crystal X-ray diffraction studies on Mo(3)P (α-V(3)S-type, space group I42m, a = 9.7925(11) Å, c = 4.8246(6) Å) and (Mo(0.85)Fe(0.15))(3)P (Ni(3)P-type, space group I4, a = 9.6982(8) Å, c = 4.7590(4) Å) at -100 °C. Representation in terms of nets containing fused triangles provides a pathway to transform these closely related structures through twisting. Band structure calculations support the adoption of these structure types and the site preference of Fe atoms. Electrical resistivity measurements on (Mo(0.85)Fe(0.15))(3)P reveal metallic behavior but no superconducting transition.

  15. First-principles quantum molecular calculations of structural and mechanical properties of TiN/SiNx heterostructures, and the achievable hardness of the nc-TiN/SiNx nanocomposites

    International Nuclear Information System (INIS)

    Ivashchenko, V.I.; Veprek, S.; Argon, A.S.; Turchi, P.E.A.; Gorb, L.; Hill, F.; Leszczynski, J.

    2015-01-01

    TiN/SiN x heterostructures with one monolayer of the interfacial SiN x have been investigated in the framework of first-principles molecular dynamics calculations in the temperature range of 0 to 1400 K with subsequent static relaxation. The atomic configurations, thermal stability and stress–strain relations have been calculated. Among the heterostructures studied, only the TiN(111)/SiN/TiN(111) and TiN(111)/Si 2 N 3 /TiN(111) ones are thermally stable. Upon tensile load, decohesion occurs between the Ti−N bonds adjacent to the SiN x interfacial layer for TiN(001)/SiN/TiN(001) and TiN(111)/Si 2 N 3 /TiN(111) heterostructures, and inside the TiN slab for TiN(001)/Si 3 N 4 /TiN(001) and TiN(110)/SiN/TiN(110) ones. Upon shear, failure occurs in TiN near the interfaces in all the heterostructures, except for the TiN(001)/Si 3 N 4 /TiN(001) one, for which the plastic flow occurs inside the TiN slab. Based on these results we estimate the maximum achievable hardness of nc-TiN/Si 3 N 4 nanocomposites free of impurities to be about 170 GPa. - Highlights: • Interface stability in TiN/SiN x heterostructures at T ≤ 1400 K is studied by quantum molecular dynamics. • Ideal decohesion and shear strengths of the heterostructures have been calculated. • Achievable hardness of nc-TiN/Si 3 N 4 -like nanocomposites of about 170 GPa is calculated. • Experimentally achieved lower hardness is limited by flaws, such as oxygen impurities

  16. Phase Equilibria of Sn-Co-Cu Ternary System

    Science.gov (United States)

    Chen, Yu-Kai; Hsu, Chia-Ming; Chen, Sinn-Wen; Chen, Chih-Ming; Huang, Yu-Chih

    2012-10-01

    Sn-Co-Cu ternary alloys are promising lead-free solders, and isothermal sections of Sn-Co-Cu phase equilibria are fundamentally important for the alloys' development and applications. Sn-Co-Cu ternary alloys were prepared and equilibrated at 523 K, 1073 K, and 1273 K (250 °C, 800 °C, and 1000 °C), and the equilibrium phases were experimentally determined. In addition to the terminal solid solutions and binary intermetallic compounds, a new ternary compound, Sn3Co2Cu8, was found. The solubilities of Cu in the α-CoSn3 and CoSn2 phases at 523 K (250 °C) are 4.2 and 1.6 at. pct, respectively, while the Cu solubility in the α-Co3Sn2 phase is as high as 20.0 at. pct. The Cu solubility increases with temperature and is around 30.0 at. pct in the β-Co3Sn2 at 1073 K (800 °C). The Co solubility in the η-Cu6Sn5 phase is also significant and is 15.5 at. pct at 523 K (250 °C).

  17. Thermal conductivity of M-Si-N (M = Mg, Ca, Sr, Ba) compounds with varying M/Si ratio

    NARCIS (Netherlands)

    Hintzen, H.T.J.M.; Bruls, R.J.; Delsing, A.C.A.; Itatani, K.; Tanaka, S.; With, de G.; Metselaar, R.

    2002-01-01

    The thermal cond. of M-Si-N (M = Mg, Ca, Sr, Ba) compds. was examd. The emphasis is on MgSiN2 (a material which can be derived from AlN by replacing systematically 2Al3+ by Mg2+/Si4+), and Si3N4 (the well known b-modification as well as the recently discovered cubic modification with the spinel

  18. Influence of Ge content on the optical properties of X and W centers in dilute Si-Ge alloys

    DEFF Research Database (Denmark)

    Leitão, J.P.; Carvalho, A.; Marques Pereira, Rui Nuno

    2011-01-01

    Photoluminescence (PL) measurements, performed in Si and Si1−xGex alloys (x= 0.0069 and 0.0125) irradiated with protons and annealed between 100 and 650 ∘C, are combined with first-principles calculations to assess the assignment of the W and X lines to the trigonal and tetragonal forms of the tr...

  19. Asymmetric supercapacitors with metal-like ternary selenides and porous graphene electrodes

    KAUST Repository

    Xia, Chuan

    2016-04-14

    Asymmetric supercapacitors provide a promising approach to fabricate capacitive energy storage devices with high energy and power densities. In this work, asymmetric supercapacitors with excellent performance have been fabricated using ternary (Ni, Co)0.85Se on carbon fabric as bind-free positive electrode and porous free-standing graphene films as negative electrode. Owing to their metal-like conductivity (~1.67×106 S m−1), significant electrochemical activity, and superhydrophilic nature, our nanostructured ternary nickel cobalt selenides result in a much higher areal capacitance (2.33 F cm−2 at 4 mA cm−2), better rate performance and cycling stability than their binary selenide equivalents, and other ternary oxides and chalcogenides. Those hybrid supercapacitors can afford impressive areal capacitance and stack capacitance of 529.3 mF cm−2 and 6330 mF cm−3 at 1 mA cm−2, respectively. More impressively, our optimized asymmetric device operating at 1.8 V delivers a very high stack energy density of 2.85 mWh cm−3 at a stack power density of 10.76 mW cm−3, as well as 85% capacitance retention after 10,000 continuous charge-discharge cycles. Even at a high stack power density of 1173 mW cm−3, this device still deliveries a stack energy density of 1.19 mWh cm−3, superior to most of the reported supercapacitors.

  20. Luminescence and Morphological Properties of GaN Layers Grown on SiC/Si(111) Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Garcia, M.A.; Ristic, J.; Calleja, E. [ISOM and Dpto. Ing. Electronica, ETSI Telecomunicacion, Univ. Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Perez-Rodriguez, A.; Serre, C.; Romano-Rodriguez, A.; Morante, J.R. [EME - Electronic Materials and Engineering, Department of Electronics, Universidad de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Koegler, R.; Skorupa, W. [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf e.V., 01314 Dresden (Germany); Trampert, A.; Ploog, K.H. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2002-08-16

    This article describes the fabrication of SiC thin films on top of Si(111) substrates by means of a multiple C-ion implantation and the subsequent growth by plasma-assisted molecular beam epitaxy of GaN layers. The stoichiometry of the top SiC layer is controlled by reactive ion etching. Photoluminescence spectra reveal that all GaN layers are under biaxial tensile strain of thermal origin. The photoluminescence efficiency clearly depends on the stoichiometry of the initial SiC layer and on whether AlN buffer layers are used or not. GaN layers grown directly on bare non-stoichiometric SiC layers exhibit the best photoluminescence efficiency but also a high degree of mosaicity, as measured by X-ray diffraction techniques. The nucleation process involved in the initial stages of the growth leads to the formation of large dislocation-free grains with a high PL efficiency and with a higher tensile strain character. Despite the lack of a perfect monocrystalline SiC substrate lattice, high quality GaN microcrystals are obtained. (Abstract Copyright[2002], Wiley Periodicals, Inc.)