WorldWideScience

Sample records for voltage switching ebs

  1. High voltage MOSFET switching circuit

    Science.gov (United States)

    McEwan, Thomas E.

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  2. Bootstrapped Low-Voltage Analog Switches

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper

    1999-01-01

    Novel low-voltage constant-impedance analog switch circuits are proposed. The switch element is a single MOSFET, and constant-impedance operation is obtained using simple circuits to adjust the gate and bulk voltages relative to the switched signal. Low-voltage (1-volt) operation is made feasible...

  3. Low-Voltage Switched-Capacitor Circuits

    DEFF Research Database (Denmark)

    Bidari, E.; Keskin, M.; Maloberti, F.

    1999-01-01

    Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications.......Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

  4. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  5. Streamer model for high voltage water switches

    International Nuclear Information System (INIS)

    Sazama, F.J.; Kenyon, V.L. III

    1979-01-01

    An electrical switch model for high voltage water switches has been developed which predicts streamer-switching effects that correlate well with water-switch data from Casino over the past four years and with switch data from recent Aurora/AMP experiments. Preclosure rounding and postclosure resistive damping of pulseforming line voltage waveforms are explained in terms of spatially-extensive, capacitive-coupling of the conducting streamers as they propagate across the gap and in terms of time-dependent streamer resistance and inductance. The arc resistance of the Casino water switch and of a gas switch under test on Casino was determined by computer fit to be 0.5 +- 0.1 ohms and 0.3 +- 0.06 ohms respectively, during the time of peak current in the power pulse. Energy lost in the water switch during the first pulse is 18% of that stored in the pulseforming line while similar energy lost in the gas switch is 11%. The model is described, computer transient analyses are compared with observed water and gas switch data and the results - switch resistance, inductance and energy loss during the primary power pulse - are presented

  6. Reducing Ripple In A Switching Voltage Regulator

    Science.gov (United States)

    Paulkovich, John; Rodriguez, G. Ernest

    1994-01-01

    Ripple voltage in output of switching voltage regulator reduced substantially by simple additional circuitry adding little to overall weight and size of regulator. Heretofore, additional filtering circuitry needed to obtain comparable reductions in ripple typically as large and heavy as original regulator. Current opposing ripple current injected into filter capacitor.

  7. High voltage superconducting switch for power application

    International Nuclear Information System (INIS)

    Mawardi, O.; Ferendeci, A.; Gattozzi, A.

    1983-01-01

    This paper reports the development of a novel interrupter which meets the requirements of a high voltage direct current (HVDC) power switch and at the same time doubles as a current limiter. The basic concept of the interrupter makes use of a fast superconducting, high capacity (SHIC) switch that carries the full load current while in the superconducting state and reverts to the normal resistive state when triggered. Typical design parameters are examined for the case of a HVDC transmission line handling 2.5KA at 150KVDC. The result is a power switch with superior performance and smaller size than the ones reported to date

  8. High voltage disconnect switch position monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Crampton, S W

    1983-08-01

    Unreliable position indication on high-voltage (HV) disconnect switches can result in equipment damage worth many times the cost of a disconnect switch. The benefits and limitations of a number of possible methods of reliably monitoring HV disconnect switches are assessed. Several methods of powering active devices at HV are noted. It is concluded that the most reliable way of monitoring switch position at reasonable cost would use a passive hermetically-sealed blade-position sensor located at HV, with a fibre-optic link between HV and ground. Separate sensors would be used for open and closed position indication. For maximum reliability the fibre-optic link would continue into the relay building. A passive magnetically actuated fibre-optic sensor has been built which demonstrates the feasibility of the concept. The sensor monitors blade position relative to the jaws in three dimensions with high resolution. A design for an improved passive magneto-optic sensor has significantly lower optical losses, allowing a single fibre-optic loop and 3 sensors to monitor closure of all phases of a disconnect switch. A similar loop would monitor switch opening. The improved sensor has a solid copper housing to provide greater immunity to fault currents, and to protect it from the environment and from physical damage. Two methods of providing a protected path for fibre-optics passing from HV to ground are proposed, one using a hollow porcelain switch-support insulator and the other using an additional small-diameter polymer insulator with optical fibres imbedded in its fibreglass core. A number of improvements are recommended which can be made to existing switches to increase their reliability. 16 refs., 13 figs., 1 tab.

  9. High voltage fast switches for nuclear applications

    International Nuclear Information System (INIS)

    Chatroux, D.; Lausenaz, Y.; Villard, J.F.; Lafore, D.

    1999-01-01

    SILVA process consists in a selective ionization of the 235 uranium isotope, using laser beams generated by dye lasers pumped by copper vapour laser (C.V.L.). SILVA involves power electronic for 3 power supplies: - copper vapour laser power supply, - extraction power supply to generate the electric field in the vapour, and - electron beam power supply for vapour generation. This article reviews the main switches that are proposed on the market or are on development and that could be used in SILVA power supplies. The SILVA technical requirements are: high power, high voltage and very short pulses (200 ns width). (A.C.)

  10. Optically triggered high voltage switch network and method for switching a high voltage

    Science.gov (United States)

    El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  11. Optically triggered high voltage switch network and method for switching a high voltage

    Energy Technology Data Exchange (ETDEWEB)

    El-Sharkawi, Mohamed A. (Renton, WA); Andexler, George (Everett, WA); Silberkleit, Lee I. (Mountlake Terrace, WA)

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  12. High voltage switches having one or more floating conductor layers

    Science.gov (United States)

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  13. Contribution to high voltage matrix switches reliability

    International Nuclear Information System (INIS)

    Lausenaz, Yvan

    2000-01-01

    Nowadays, power electronic equipment requirements are important, concerning performances, quality and reliability. On the other hand, costs have to be reduced in order to satisfy the market rules. To provide cheap, reliability and performances, many standard components with mass production are developed. But the construction of specific products must be considered following these two different points: in one band you can produce specific components, with delay, over-cost problems and eventuality quality and reliability problems, in the other and you can use standard components in a adapted topologies. The CEA of Pierrelatte has adopted this last technique of power electronic conception for the development of these high voltage pulsed power converters. The technique consists in using standard components and to associate them in series and in parallel. The matrix constitutes high voltage macro-switch where electrical parameters are distributed between the synchronized components. This study deals with the reliability of these structures. It brings up the high reliability aspect of MOSFETs matrix associations. Thanks to several homemade test facilities, we obtained lots of data concerning the components we use. The understanding of defects propagation mechanisms in matrix structures has allowed us to put forwards the necessity of robust drive system, adapted clamping voltage protection, and careful geometrical construction. All these reliability considerations in matrix associations have notably allowed the construction of a new matrix structure regrouping all solutions insuring reliability. Reliable and robust, this product has already reaches the industrial stage. (author) [fr

  14. A new Zero-Voltage-Transition PWM switching cell

    Energy Technology Data Exchange (ETDEWEB)

    Grigore, V. [Electronics and Telecommunications Faculty `Politebuica` University Bucharest (Romania); Kyyrae, J. [Helsinki University of Technology, Otaniemi (Finland): Institute of Intelligent Power Electronics

    1997-12-31

    In this paper a new Zero-Voltage-Transition (ZVT) PWM switching cell is presented. The proposed switching cell is composed of the normal hard-switched PWM cell (consisting of one active switch and one passive switch), plus an auxiliary circuit (consisting of one active switch and some reactive components). The auxiliary circuit is inactive during the ON and OFF intervals of the switches in the normal PWM switch. However, the transitions between the two states are controlled by the auxiliary circuit. Prior to turn-on, the voltage across the active switch in the PWM cell is forced to zero, thus the turn-on losses of the active switch are practically eliminated. At turn-off the auxiliary circuit behaves like a non-dissipative passive snubber reducing the turn-off losses to a great extent. Zero-Voltage-Transition switching technique almost eliminates switching losses. The active switch operates under ZVT conditions, the passive switch (diode) has a controlled reverse recovery, and the switch in the auxiliary circuit operates under Zero-Current-Switching (ZCS) conditions. (orig.) 6 refs.

  15. Advances in high voltage power switching with GTOs

    International Nuclear Information System (INIS)

    Podlesak, T.F.

    1990-01-01

    The control of high voltage at high power, particularly opening switches, has been difficult in the past. Using gate turnoff thyristors (GTOs) arranged in series enables large currents to be switched at high voltage. The authors report a high voltage opening switch has been successfully demonstrated. This switch uses GTOs in series and successfully operates at voltages higher than the rated voltage of the individual devices. It is believed that this is the first time this has been successfully demonstrated, in that GTOs have been operated in series before, but always in a manner as to not exceed the voltage capability of the individual devices. In short, the devices have not worked together, sharing the voltage, but one device has been operated using several backup devices. Of particular interest is how well the individual devices share the voltage applied to them. Equal voltage sharing between devices is absolutely essential, in order to not exceed the voltage rating of any of the devices in the series chain. This is accomplished at high (microsecond) switching speeds. Thus, the system is useful for high frequency applications as well as high power, making for a flexible circuit system element. This demonstration system is rated at 5 KV and uses 1 KV devices. A larger 24 KV system is under design and will use 4.5 KV devices. In order to design the 24 KV switch, the safe operating area of the large devices must be known thoroughly

  16. A comparison of medium voltage static transfer switches and medium voltage mechanical transfer switches

    Energy Technology Data Exchange (ETDEWEB)

    Risko, W. P.

    2002-07-01

    Medium voltage static transfer switches (MVSTS) and medium voltage mechanical transfer switches (MVATS) perform a common function, namely selecting between two independent power sources to provide uninterrupted power to the loads. Although the functions are the same the method of performing that function is different and this method impacts the sources and connected load. This article describes the two methods of transfer -- mechanical and static -- their advantages and disadvantages, and their preferred applications. The MVSTS can be incorporated into many applications; it can work in conjunction with backup sources such as generators; and can replace generators as a low cost solution. The reliability of the MVSTS is very high; it also outperforms the MVATS with regard to transfer speed, and can react to anomalies in the same sub-cycle time frame. Because the design of the MVSTS is modular, it can be engineered and designed to fit into existing and future systems and applications, and can be used with different switchgear variations and protection arrangements. For example, load isolation and protection breakers can be added to the switchgear to provide flexibility and isolation.

  17. Switching phenomena in high-voltage circuit breakers

    International Nuclear Information System (INIS)

    Nakanishi, K.

    1991-01-01

    The topics covered in this book include: general problems concerning current interruption, the physical arc model, and miscellaneous types of modern switching apparatus, such as gas circuit breakers, gas-insulated switch-gear, vacuum circuit breakers and high-voltage direct-current circuit breakers

  18. Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current

    Science.gov (United States)

    Ohta, Akio; Kato, Yusuke; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2018-06-01

    We have studied the resistive switching behaviors of electron beam (EB) evaporated Si-rich oxide (SiO x ) sandwiched between Ni electrodes by applying a constant voltage and current. Additionally, the impact of Ti nanodots (NDs) embedded into SiO x on resistive switching behaviors was investigated because it is expected that NDs can trigger the formation of a conductive filament path in SiO x . The resistive switching behaviors of SiO x show that the response time during resistance switching was decreased by increasing the applied constant current or constant voltage. It was found that Ti-NDs in SiO x enhance the conductive filament path formation owing to electric field concentration by Ti-NDs.

  19. High-Voltage MOSFET Switching Circuit

    Science.gov (United States)

    Jensen, Kenneth A.

    1995-01-01

    Circuit reliably switches power at supply potential of minus 1,500 V, with controlled frequency and duty cycle. Used in argon-plasma ion-bombardment equipment for texturing copper electrodes, as described in "Texturing Copper To Reduce Secondary Emission of Electrons" (LEW-15898), also adapted to use in powering gaseous flash lamps and stroboscopes.

  20. Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

    Directory of Open Access Journals (Sweden)

    Deepak Bansal

    2016-01-01

    Full Text Available RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

  1. High voltage switch triggered by a laser-photocathode subsystem

    Science.gov (United States)

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

    2013-01-08

    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  2. Ultra-Low Voltage Class AB Switched Current Memory Cell

    DEFF Research Database (Denmark)

    Igor, Mucha

    1996-01-01

    This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

  3. Gas tube-switched high voltage DC power converter

    Science.gov (United States)

    She, Xu; Bray, James William; Sommerer, Timothy John; Chokhawala, Rahul

    2018-05-15

    A direct current (DC)-DC converter includes a transformer and a gas tube-switched inverter circuit. The transformer includes a primary winding and a secondary winding. The gas tube-switched inverter circuit includes first and second inverter load terminals and first and second inverter input terminals. The first and second inverter load terminals are coupled to the primary winding. The first and second inverter input terminals are couplable to a DC node. The gas tube-switched inverter circuit further includes a plurality of gas tube switches respectively coupled between the first and second inverter load terminals and the first and second inverter input terminals. The plurality of gas tube switches is configured to operate to generate an alternating current (AC) voltage at the primary winding.

  4. Solid State High Voltage Supply for EB and X-Ray Generators

    Czech Academy of Sciences Publication Activity Database

    Zobač, Martin; Vlček, Ivan

    2009-01-01

    Roč. 44, 5-6 (2009), s. 73-75 ISSN 0861-4717 R&D Projects: GA AV ČR KAN300100702 Institutional research plan: CEZ:AV0Z20650511 Keywords : high voltage supply * electron beam generator * x-ray generator Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  5. High voltage photo switch package module

    Science.gov (United States)

    Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen E

    2014-02-18

    A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces, and at least one light-input surface. First metallic layers are formed on the electrode-interface surfaces, and one or more optical waveguides having input and output ends are bonded to the substrate so that the output end of each waveguide is bonded to a corresponding one of the light-input surfaces of the photo-conductive substrate. This forms a waveguide-substrate interface for coupling light into the photo-conductive wafer. A dielectric material such as epoxy is then used to encapsulate the photo-conductive substrate and optical waveguide so that only the metallic layers and the input end of the optical waveguide are exposed. Second metallic layers are then formed on the first metallic layers so that the waveguide-substrate interface is positioned under the second metallic layers.

  6. A new Zero Voltage Switching three-level NPC inverter

    DEFF Research Database (Denmark)

    He, Ning; Chen, Yenan; Xu, Dehong

    2015-01-01

    A novel Zero Voltage Switching (ZVS) three-level NPC inverter topology using a new ZVS Space Vector Modulation (SVM) scheme is proposed. A detailed operation analysis of ZVS three-level NPC inverter is given. The ZVS condition of the proposed ZVS inverter is derived and it can be achieved of all...

  7. Low Voltage Current Mode Switched-Current-Mirror Mixer

    Directory of Open Access Journals (Sweden)

    Chunhua Wang

    2009-09-01

    Full Text Available A new CMOS active mixer topology can operate at 1 V supply voltage by use of SCM (switched currentmirror. Such current-mode mixer requires less voltage headroom with good linearization. Mixing is achieved with four improved current mirrors, which are alternatively activated. For ideal switching, the operation is equivalent to a conventional active mixer. This paper analyzes the performance of the SCM mixer, in comparison with the conventional mixer, demonstrating competitive performance at a lower supply voltage. Moreover, the new mixer’s die, without any passive components, is very small, and the conversion gain is easy to adjust. An experimental prototype was designed and simulated in standard chartered 0.18μm RF CMOS Process with Spectre in Cadence Design Systems. Experimental results show satisfactory mixer performance at 2.4 GHz.

  8. Uv laser triggering of high-voltage gas switches

    International Nuclear Information System (INIS)

    Woodworth, J.R.; Frost, C.A.; Green, T.A.

    1982-01-01

    Two different techniques are discussed for uv laser triggering of high-voltage gas switches using a KrF laser (248 nm) to create an ionized channel through the dielectric gas in a spark gap. One technique uses an uv laser to induce breakdown in SF 6 . For this technique, we present data that demonstrate a 1-sigma jitter of +- 150 ps for a 0.5-MV switch at 80% of its self-breakdown voltage using a low-divergence KrF laser. The other scheme uses additives to the normal dielectric gas, such as tripropylamine, which are selected to undergo resonant two-step ionization in the uv laser field

  9. Low-profile high-voltage compact gas switch

    International Nuclear Information System (INIS)

    Goerz, D.A.; Wilson, M.J.; Speer, R.D.

    1997-01-01

    This paper discusses the development and testing of a low-profile, high-voltage, spark-gap switch designed to be closely coupled with other components into an integrated high-energy pulsed-power source. The switch is designed to operate at 100 kV using SF6 gas pressurized to less than 0.7 MPa. The volume of the switch cavity region is less than 1.5 cm3, and the field stress along the gas-dielectric interface is as high as 130 kV/cm. The dielectric switch body has a low profile that is only I -cm tall at its greatest extent and nominally 2-mm thick over most of its area. This design achieves a very low inductance of less than 5 nH, but results in field stresses exceeding 500 kV/cm in the dielectric material. Field modeling was done to determine the appropriate shape for the highly stressed insulator and electrodes, and special manufacturing techniques were employed to mitigate the usual mechanisms that induce breakdown and failure in solid dielectrics. Static breakdown tests verified that the switch operates satisfactorily at 100 kV levels. The unit has been characterized with different shaped electrodes having nominal gap spacings of 2.0, 2.5, and 3.0 mm. The relationship between self-break voltage and operating pressure agrees well with published data on gas properties, accounting for the field enhancements of the electrode shapes being used. Capacitor discharge tests in a low inductance test fixture exhibited peak currents up to 25 kA with characteristic frequencies of the ringdown circuit ranging from 10 to 20 MHz. The ringdown waveforms and scaling of measured parameters agree well with circuit modeling of the switch and test fixture. Repetitive operation has been demonstrated at moderate rep-rates up to 15 Hz, limited by the power supply being used. Preliminary tests to evaluate lifetime of the compact switch assembly have been encouraging. In one case, after more than 7,000 high-current ringdown tests with approximately 30 C of total charge transferred, the

  10. Allosteric substrate switching in a voltage-sensing lipid phosphatase.

    Science.gov (United States)

    Grimm, Sasha S; Isacoff, Ehud Y

    2016-04-01

    Allostery provides a critical control over enzyme activity, biasing the catalytic site between inactive and active states. We found that the Ciona intestinalis voltage-sensing phosphatase (Ci-VSP), which modifies phosphoinositide signaling lipids (PIPs), has not one but two sequential active states with distinct substrate specificities, whose occupancy is allosterically controlled by sequential conformations of the voltage-sensing domain (VSD). Using fast fluorescence resonance energy transfer (FRET) reporters of PIPs to monitor enzyme activity and voltage-clamp fluorometry to monitor conformational changes in the VSD, we found that Ci-VSP switches from inactive to a PIP3-preferring active state when the VSD undergoes an initial voltage-sensing motion and then into a second PIP2-preferring active state when the VSD activates fully. This two-step allosteric control over a dual-specificity enzyme enables voltage to shape PIP concentrations in time, and provides a mechanism for the complex modulation of PIP-regulated ion channels, transporters, cell motility, endocytosis and exocytosis.

  11. Allosteric substrate switching in a voltage sensing lipid phosphatase

    Science.gov (United States)

    Grimm, Sasha S.; Isacoff, Ehud Y.

    2016-01-01

    Allostery provides a critical control over enzyme activity, biasing the catalytic site between inactive and active states. We find the Ciona intestinalis voltage-sensing phosphatase (Ci-VSP), which modifies phosphoinositide signaling lipids (PIPs), to have not one but two sequential active states with distinct substrate specificities, whose occupancy is allosterically controlled by sequential conformations of the voltage sensing domain (VSD). Using fast FRET reporters of PIPs to monitor enzyme activity and voltage clamp fluorometry to monitor conformational changes in the VSD, we find that Ci-VSP switches from inactive to a PIP3-preferring active state when the VSD undergoes an initial voltage sensing motion and then into a second PIP2-preferring active state when the VSD activates fully. This novel 2-step allosteric control over a dual specificity enzyme enables voltage to shape PIP concentrations in time, and provides a mechanism for the complex modulation of PIP-regulated ion channels, transporters, cell motility and endo/exocytosis. PMID:26878552

  12. E-beam high voltage switching power supply

    Science.gov (United States)

    Shimer, Daniel W.; Lange, Arnold C.

    1997-01-01

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

  13. E-beam high voltage switching power supply

    International Nuclear Information System (INIS)

    Shimer, D.W.; Lange, A.C.

    1997-01-01

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360 degree/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs

  14. A Voltage Doubler Circuit to Extend the Soft-switching Range of Dual Active Bridge Converters

    DEFF Research Database (Denmark)

    Qin, Zian; Shen, Yanfeng; Wang, Huai

    2017-01-01

    A voltage doubler circuit is realized to extend the soft-switching range of Dual Active Bridge (DAB) converters. No extra hardware is added to the DAB to form this circuit, since it is composed of the dc blocking capacitor and the low side full bridge converter, which already exist in DAB....... With the voltage doubler, the DAB converter can achieve soft switching and high efficiency when the low side dc voltage is close to 2 pu (1 pu is the high side dc voltage divided by the transformer turn ratio), which can be realized only when the low side dc voltage is close to 1 pu by using the conventional phase...... shift modulation in DAB. Thus the soft switching range is extended. The soft switching boundary conditions are derived. A map to show the soft switching or hard switching in the full load and voltage range is obtained. The feasibility and effectiveness of the proposed method is finally verified...

  15. Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

    Science.gov (United States)

    She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui; Zhang, Di; Sommerer, Timothy John; Bray, James William

    2016-12-13

    A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of the one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.

  16. Analysis and design of a high-efficiency zero-voltage-switching step ...

    Indian Academy of Sciences (India)

    to soft-switching operation of the power switches and output diodes, the ... However, the complexity and the overall cost are raised and the system ... the proposed converter has a voltage doubler structure which consists of two secondary wind-.

  17. Advanced concept for a medium-voltage switch gear; Neues Konzept einer Mittelspannungsschaltanlage

    Energy Technology Data Exchange (ETDEWEB)

    Buescher, A.; Wahle, A. [Areva Energietechnik GmbH, Regensburg (Germany). Sachsenwerk Mittelspannung

    2008-03-15

    The new series GHA of medium-voltage switch gears have advantages due to sulfur hexafluorides avoidance during operation of the service life. An ergonomic display device enables simple handling and reliable switching processes. (GL)

  18. High-voltage, high-current, solid-state closing switch

    Science.gov (United States)

    Focia, Ronald Jeffrey

    2017-08-22

    A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

  19. Low pull-in voltage electrostatic MEMS switch using liquid dielectric

    KAUST Repository

    Zidan, Mohammed A.

    2014-08-01

    In this paper, we present an electrostatic MEMS switch with liquids as dielectric to reduce the actuation voltage. The concept is verified by simulating a lateral dual gate switch, where the required pull-in voltage is reduced by more than 8 times after using water as a dielectric, to become as low as 5.36V. The proposed switch is simulated using COMSOL multiphysics using various liquid volumes to study their effect on the switching performance. Finally, we propose the usage of the lateral switch as a single switch XOR logic gate.

  20. Harmonic Analysis and Mitigation of Low- Frequency Switching Voltage Source Inverter with Auxiliary VSI

    DEFF Research Database (Denmark)

    Bai, Haofeng; Wang, Xiongfei; Blaabjerg, Frede

    2018-01-01

    The output currents of high-power Voltage Source Inverters (VSIs) are distorted by the switching harmonics and the background harmonics in the grid voltage. This paper presents an active harmonic filtering scheme for high-power, low-frequency switching VSIs with an additional auxiliary VSI. In th...

  1. Theoretical investigation of a photoconductively switched high-voltage spark gap

    NARCIS (Netherlands)

    Broks, B.H.P.; Hendriks, J.; Brok, W.J.M.; Brussaard, G.J.H.; Mullen, van der J.J.A.M.

    2006-01-01

    In this contribution, a photoconductively switched high-voltage spark gap with an emphasis on theswitching behavior is modeled. It is known experimentally that not all of the voltage that is present at the input of the spark gap is switched, but rather a fraction of it drops across the spark gap.

  2. Low pull-in voltage electrostatic MEMS switch using liquid dielectric

    KAUST Repository

    Zidan, Mohammed A.; Kosel, Jü rgen; Salama, Khaled N.

    2014-01-01

    In this paper, we present an electrostatic MEMS switch with liquids as dielectric to reduce the actuation voltage. The concept is verified by simulating a lateral dual gate switch, where the required pull-in voltage is reduced by more than 8 times

  3. A soft switching with reduced voltage stress ZVT-PWM full-bridge converter

    Science.gov (United States)

    Sahin, Yakup; Ting, Naim Suleyman; Acar, Fatih

    2018-04-01

    This paper introduces a novel active snubber cell for soft switching pulse width modulation DC-DC converters. In the proposed converter, the main switch is turned on under zero voltage transition and turned off under zero voltage switching (ZVS). The auxiliary switch is turned on under zero current switching (ZCS) and turned off under zero current transition. The main diode is turned on under ZVS and turned off under ZCS. All of the other semiconductors in the converter are turned on and off with soft switching. There is no extra voltage stress on the semiconductor devices. Besides, the proposed converter has simple structure and ease of control due to common ground. The detailed theoretical analysis of the proposed converter is presented and also verified with both simulation and experimental study at 100 kHz switching frequency and 600 W output power. Furthermore, the efficiency of the proposed converter is 95.7% at nominal power.

  4. High-voltage high-current triggering vacuum switch

    International Nuclear Information System (INIS)

    Alferov, D.F.; Bunin, R.A.; Evsin, D.V.; Sidorov, V.A.

    2012-01-01

    Experimental investigations of switching and breaking capacities of the new high current triggered vacuum switch (TVS) are carried out at various parameters of discharge current. It has been shown that the high current triggered vacuum switch TVS can switch repeatedly a current from units up to ten kiloampers with duration up to ten millisecond [ru

  5. Analysis of bi-directional piezoelectric-based converters for zero-voltage switching operation

    DEFF Research Database (Denmark)

    Ekhtiari, Marzieh; Zhang, Zhe; Andersen, Michael A. E.

    2016-01-01

    This paper deals with a thorough analysis of zerovoltage switching especially for bi-directional, inductorless, piezoelectric transformer-based switch-mode power supplies with a half-bridge topology. Practically, obtaining zero-voltage switching for all of the switches in a bi-directional piezoel......This paper deals with a thorough analysis of zerovoltage switching especially for bi-directional, inductorless, piezoelectric transformer-based switch-mode power supplies with a half-bridge topology. Practically, obtaining zero-voltage switching for all of the switches in a bi......-directional piezoelectric power converter is a difficult task. However, the analysis in this work will be convenient for overcoming this challenge. The analysis defines the zero-voltage region indicating the operating points whether or not soft switching can be met over the switching frequency and load range. For the first...... time, a comprehensive analysis is provided, which can be used as a design guideline for applying control techniques in order to drive switches in piezoelectric transformer-based converters. This study further conveys the proposed method to the region where all the switches can obtain soft switching...

  6. dc analysis and design of zero-voltage-switched multi-resonant converters

    Science.gov (United States)

    Tabisz, Wojciech A.; Lee, Fred C.

    Recently introduced multiresonant converters (MRCs) provide zero-voltage switching (ZVS) of both active and passive switches and offer a substantial reduction of transistor voltage stress and an increase of load range, compared to their quasi-resonant converter counterparts. Using the resonant switch concept, a simple, generalized analysis of ZVS MRCs is presented. The conversion ratio and voltage stress characteristics are derived for basic ZVS MRCs, including buck, boost, and buck/boost converters. Based on the analysis, a design procedure that optimizes the selection of resonant elements for maximum conversion efficiency is proposed.

  7. A novel high voltage start up circuit for an integrated switched mode power supply

    Energy Technology Data Exchange (ETDEWEB)

    Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

  8. A Component-Reduced Zero-Voltage Switching Three-Level DC-DC Converter

    DEFF Research Database (Denmark)

    Qin, Zian; Pang, Ying; Wang, Huai

    2016-01-01

    The basic Zero-Voltage Switching (ZVS) three-level DC-DC converter has one clamping capacitor to realize the ZVS of the switches, and two clamping diodes to clamp the voltage of the clamping capacitor. In order to reduce the reverse recovery loss of the diode as well as its cost, this paper...... proposes to remove one of the clamping diodes in basic ZVS three-level DC-DC converter. With less components, the proposed converter can still have a stable clamping capacitor voltage, which is clamped at half of the dc link voltage. Moreover, the ZVS performance will be influenced by removing the clamping...

  9. Ultra Low Voltage Class AB Switched Current Memory Cells Based on Floating Gate Transistors

    DEFF Research Database (Denmark)

    Mucha, Igor

    1999-01-01

    current memory cells were designed using a CMOS process with threshold voltages V-T0n = \\V-T0p\\ = 0.9 V for the n- and p-channel devices. Both hand calculations and PSPICE simulations showed that the designed example switched current memory cell allowed a maximum signal range better than +/-18 mu......A proposal for a class AB switched current memory cell, suitable for ultra-low-voltage applications is presented. The proposal employs transistors with floating gates, allowing to build analog building blocks for ultralow supply voltage operation also in CMOS processes with high threshold voltages....... This paper presents the theoretical basis for the design of "floating-gate'' switched current memory cells by giving a detailed description and analysis of the most important impacts degrading the performance of the cells. To support the theoretical assumptions circuits based on "floating-gate'' switched...

  10. Novel Step-Up DC/DC Converter with No Right Half Plane Zero and Reduced Switched Voltage Stress Characteristics

    DEFF Research Database (Denmark)

    Mostaan, Ali; Alizadeh, Ebrahim; Soltani, Mohsen

    2014-01-01

    and the voltage transfer gain is obtained. It is also demonstrated that the voltage stress on all semiconductor devices is restricted to input voltage which allows the utilization of a power switch with lower drain source resistance. In order to further increase the voltage gain another switched capacitor voltage......Novel step-up DC/DC converter is introduced in this paper. This converter is realized with adding the switched capacitor voltage multiplier cell to the three switch step-down DC/DC converter that has been proposed in the literature. The proposed converter is analyzed in the steady state...

  11. Repetitive plasma opening switch for powerful high-voltage pulse generators

    International Nuclear Information System (INIS)

    Dolgachev, G.I.; Zakatov, L.P.; Nitishinskii, M.S.; Ushakov, A.G.

    1998-01-01

    Results are presented of experimental studies of plasma opening switches that serve to sharpen the pulses of inductive microsecond high-voltage pulse generators. It is demonstrated that repetitive plasma opening switches can be used to create super-powerful generators operating in a quasi-continuous regime. An erosion switching mechanism and the problem of magnetic insulation in repetitive switches are considered. Achieving super-high peak power in plasma switches makes it possible to develop new types of high-power generators of electron beams and X radiation. Possible implementations and the efficiency of these generators are discussed

  12. Systems and methods for switched-inductor integrated voltage regulators

    Science.gov (United States)

    Shepard, Kenneth L.; Sturcken, Noah Andrew

    2017-12-12

    Power controller includes an output terminal having an output voltage, at least one clock generator to generate a plurality of clock signals and a plurality of hardware phases. Each hardware phase is coupled to the at least one clock generator and the output terminal and includes a comparator. Each hardware phase is configured to receive a corresponding one of the plurality of clock signals and a reference voltage, combine the corresponding clock signal and the reference voltage to produce a reference input, generate a feedback voltage based on the output voltage, compare the reference input and the feedback voltage using the comparator and provide a comparator output to the output terminal, whereby the comparator output determines a duty cycle of the power controller. An integrated circuit including the power controller is also provided.

  13. Verification of the short-circuit current making capability of high-voltage switching devices

    NARCIS (Netherlands)

    Smeets, R.P.P.; Linden, van der W.A.

    2001-01-01

    Switching-in of short-circuit current leads to pre-arcing in the switching device. Pre-arcing affects the ability of switchgear to close and latch. In three-phase systems, making is associated with transient voltage phenomena that may have a significant impact on the duration of the pre-arcing

  14. Subnanosecond, high voltage photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L. (Lawrence Livermore National Lab., CA (USA)); O' Bannon, B.J. (Rockwell International Corp., Anaheim, CA (USA))

    1990-01-01

    We are conducting research on the switching properties of photoconductive materials to explore their potential for generating high-power microwaves (HPM) and for high rep-rate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanche-like mode (the optical pulse only controls switch closing). Operating in the linear mode, we have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lock-on modes, high fields are switched with lower laser pulse energies, resulting in higher efficiencies; but with measurable switching delay and jitter. We are currently investigating both large area (1 cm{sup 2}) and small area (<1 mm{sup 2}) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 {mu}m.

  15. Subnanosecond, high-voltage photoconductive switching in GaAs

    Science.gov (United States)

    Druce, Robert L.; Pocha, Michael D.; Griffin, Kenneth L.; O'Bannon, Jim

    1991-03-01

    We are conducting research on the switching properties of photoconductive materials to explore their potential for generating highpower microwaves (HPM) and for high reprate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanchelike mode (the optical pulse only controls switch closing) . Operating in the unear mode we have observed switch closing times of less than 200 Ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lockon modes high fields are switched with lower laser pulse energies resulting in higher efficiencies but with measurable switching delay and jitter. We are currently investigating both large area (1 cm2) and small area 1 mm2) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1. 06 tim.

  16. A Reduced Switch Voltage Stress Class E Power Amplifier Using Harmonic Control Network

    OpenAIRE

    Ali Reza Zirak; Sobhan Roshani

    2016-01-01

    In this paper, a harmonic control network (HCN) is presented to reduce the voltage stress (maximum MOSFET voltage) of the class E power amplifier (PA). Effects of the HCN on the amplifier specifications are investigated. The results show that the proposed HCN affects several specifications of the amplifier, such as drain voltage, switch current, output power capability (Cp factor), and drain impedance. The output power capability of the presented amplifier is also improved, compared with the ...

  17. Minimization of switching frequency oscillation of voltage inverter

    Czech Academy of Sciences Publication Activity Database

    Večerka, Tomáš

    2011-01-01

    Roč. 56, č. 2 (2011), s. 125-140 ISSN 0001-7043 Institutional research plan: CEZ:AV0Z20570509 Keywords : switching frequency * pulse-width modulation * induction motors Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  18. Analysis of dc-Link Voltage Switching Ripple in Three-Phase PWM Inverters

    Directory of Open Access Journals (Sweden)

    Marija Vujacic

    2018-02-01

    Full Text Available The three-phase voltage source inverter (VSI is de facto standard in power conversion systems. To realize high power density systems, one of the items to be correctly addressed is the design and selection of the dc-link capacitor in relation to the voltage switching ripple. In this paper, effective formulas for designing the dc-link capacitor as a function of the switching voltage ripple amplitude are obtained, considering the operating conditions such as the modulation index and the output current amplitude. The calculations are obtained considering the requirements and restrictions referring to the high (switching-frequency dc-link voltage ripple component. Analyses have been performed considering the dc source impedance (non-ideal dc voltage source at the switching frequency and a balanced load. Analytical expressions are derived for the dc-link voltage switching ripple amplitude and its maximum value over the fundamental period. Different values of modulation index and output phase angle have been considered and different diagrams are presented. Analytical results were validated both by simulations and comprehensive experimental tests.

  19. A consistent approach to estimate the breakdown voltage of high voltage electrodes under positive switching impulses

    Science.gov (United States)

    Arevalo, L.; Wu, D.; Jacobson, B.

    2013-08-01

    The main propose of this paper is to present a physical model of long air gap electrical discharges under positive switching impulses. The development and progression of discharges in long air gaps are attributable to two intertwined physical phenomena, namely, the leader channel and the streamer zone. Experimental studies have been used to develop empirical and physical models capable to represent the streamer zone and the leader channel. The empirical ones have led to improvements in the electrical design of high voltage apparatus and insulation distances, but they cannot take into account factors associated with fundamental physics and/or the behavior of materials. The physical models have been used to describe and understand the discharge phenomena of laboratory and lightning discharges. However, because of the complex simulations necessary to reproduce real cases, they are not in widespread use in the engineering of practical applications. Hence, the aim of the work presented here is to develop a model based on physics of the discharge capable to validate and complement the existing engineering models. The model presented here proposes a new geometrical approximation for the representation of the streamer and the calculation of the accumulated electrical charge. The model considers a variable streamer region that changes with the temporal and spatial variations of the electric field. The leader channel is modeled using the non local thermo-equilibrium equations. Furthermore, statistical delays before the inception of the first corona, and random distributions to represent the tortuous nature of the path taken by the leader channel were included based on the behavior observed in experimental tests, with the intention of ensuring the discharge behaved in a realistic manner. For comparison purposes, two different gap configurations were simulated. A reasonable agreement was found between the physical model and the experimental test results.

  20. Prediction of picosecond voltage collapse and electromagnetic wave generation in gas avalanche switches

    International Nuclear Information System (INIS)

    Mayhall, D.J.; Yee, J.H.; Duong-Van, M.; Villa, F.

    1988-01-01

    A picosecond speed switch, the Gas Avalanche Switch (GAS), has been proposed for GeV linear accelerators. The medium is gas at high pressure (100 - 700 atm). An avalanche discharge is induced between pulse-charged high voltage electrodes by electron deposition from a fast laser pulse. Avalanche electrons move to the positive electrode, causing the applied voltage to collapse in picoseconds. A two-dimensional (2D) electromagnetic electron fluid computer code calculates the avalanche evolution and voltage collapse in air for an infinite parallel plate capacitor with a 0.1 mm spacing. Calculations are done for an accelerator switch geometry consisting of a 0.7 mm wide by 0.8 mm high, rectangular, high voltage center electrode (CE) between the grounded plates of a parallel plate line of 2 mm spacing. Several variations of CE elevation and initial electron deposition are investigated The 2D character of the outgoing TEM waves is shown

  1. Voltage-Driven Magnetization Switching and Spin Pumping in Weyl Semimetals

    Science.gov (United States)

    Kurebayashi, Daichi; Nomura, Kentaro

    2016-10-01

    We demonstrate electrical magnetization switching and spin pumping in magnetically doped Weyl semimetals. The Weyl semimetal is a three-dimensional gapless topological material, known to have nontrivial coupling between the charge and the magnetization due to the chiral anomaly. By solving the Landau-Lifshitz-Gilbert equation for a multilayer structure of a Weyl semimetal, an insulator and a metal while taking the charge-magnetization coupling into account, magnetization dynamics is analyzed. It is shown that the magnetization dynamics can be driven by the electric voltage. Consequently, switching of the magnetization with a pulsed electric voltage can be achieved, as well as precession motion with an applied oscillating electric voltage. The effect requires only a short voltage pulse and may therefore be energetically favorable for us in spintronics devices compared to conventional spin-transfer torque switching.

  2. Statistical study of overvoltages by maneuvering in switches in high voltage using EMTP-RV

    International Nuclear Information System (INIS)

    Dominguez Herrera, Diego Armando

    2013-01-01

    The transient overvoltages produced by maneuvering of switches are studied in a statistical way and through a variation the sequential closing times of switches in networks larger than 230 kV. This study is performed according to time delays and typical deviation ranges, using the tool EMTP- RV (ElectroMagnetic Trasient Program Restructured Version). A conceptual framework related with the electromagnetic transients by maneuver is developed in triphasic switches installed in nominal voltages higher than 230 kV. The methodology established for the execution of statistical studies of overvoltages by switch maneuver is reviewed and evaluated by simulating two fictitious cases in EMTP-RV [es

  3. The phenomenon of voltage controlled switching in disordered superconductors

    International Nuclear Information System (INIS)

    Ghosh, Sanjib; De Munshi, D

    2014-01-01

    The superconductor-to-insulator transition (SIT) is a phenomenon occurring in highly disordered superconductors and may be useful in the development of superconducting switches. The SIT has been demonstrated to be induced by different external parameters: temperature, magnetic field, electric field, etc. However, the electric field induced SIT (ESIT), which has been experimentally demonstrated for some specific materials, holds particular promise for practical device development. Here, we demonstrate, from theoretical considerations, the occurrence of the ESIT. We also propose a general switching device architecture using the ESIT and study some of its universal behavior, such as the effects of sample size, disorder strength and temperature on the switching action. This work provides a general framework for the development of such a device. (paper)

  4. State Recognition of High Voltage Isolation Switch Based on Background Difference and Iterative Search

    Science.gov (United States)

    Xu, Jiayuan; Yu, Chengtao; Bo, Bin; Xue, Yu; Xu, Changfu; Chaminda, P. R. Dushantha; Hu, Chengbo; Peng, Kai

    2018-03-01

    The automatic recognition of the high voltage isolation switch by remote video monitoring is an effective means to ensure the safety of the personnel and the equipment. The existing methods mainly include two ways: improving monitoring accuracy and adopting target detection technology through equipment transformation. Such a method is often applied to specific scenarios, with limited application scope and high cost. To solve this problem, a high voltage isolation switch state recognition method based on background difference and iterative search is proposed in this paper. The initial position of the switch is detected in real time through the background difference method. When the switch starts to open and close, the target tracking algorithm is used to track the motion trajectory of the switch. The opening and closing state of the switch is determined according to the angle variation of the switch tracking point and the center line. The effectiveness of the method is verified by experiments on different switched video frames of switching states. Compared with the traditional methods, this method is more robust and effective.

  5. High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

    Science.gov (United States)

    Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

    2016-10-01

    Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

  6. Optimization of Contact Force and Pull-in Voltage for Series based MEMS Switch

    Directory of Open Access Journals (Sweden)

    Abhijeet KSHIRSAGAR

    2010-04-01

    Full Text Available Cantilever based metal-to-metal contact type MEMS series switch has many applications namely in RF MEMS, Power MEMS etc. A typical MEMS switch consists of a cantilever as actuating element to make the contact between the two metal terminals of the switch. The cantilever is pulled down by applying a pull-in voltage to the control electrode that is located below the middle portion of the cantilever while only the tip portion of the cantilever makes contact between the two terminals. Detailed analysis of bending of the cantilever for different pull-in voltages reveals some interesting facts. At low pull-in voltage the cantilever tip barely touches the two terminals, thus resulting in very less contact area. To increase contact area a very high pull-in voltage is applied, but it lifts the tip from the free end due to concave curving of the cantilever in the middle region of the cantilever where the electrode is located. Again it results in less contact area. Furthermore, the high pull-in voltage produces large stress at the base of the cantilever close to the anchor. Therefore, an optimum, pull-in voltage must exist at which the concave curving is eliminated and contact area is maximum. In this paper authors report the finding of optimum contact force and pull-in voltage.

  7. Voltage-Driven Conformational Switching with Distinct Raman Signature in a Single-Molecule Junction.

    Science.gov (United States)

    Bi, Hai; Palma, Carlos-Andres; Gong, Yuxiang; Hasch, Peter; Elbing, Mark; Mayor, Marcel; Reichert, Joachim; Barth, Johannes V

    2018-04-11

    Precisely controlling well-defined, stable single-molecule junctions represents a pillar of single-molecule electronics. Early attempts to establish computing with molecular switching arrays were partly challenged by limitations in the direct chemical characterization of metal-molecule-metal junctions. While cryogenic scanning probe studies have advanced the mechanistic understanding of current- and voltage-induced conformational switching, metal-molecule-metal conformations are still largely inferred from indirect evidence. Hence, the development of robust, chemically sensitive techniques is instrumental for advancement in the field. Here we probe the conformation of a two-state molecular switch with vibrational spectroscopy, while simultaneously operating it by means of the applied voltage. Our study emphasizes measurements of single-molecule Raman spectra in a room-temperature stable single-molecule switch presenting a signal modulation of nearly 2 orders of magnitude.

  8. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase...... efficiency, reduce the product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented....

  9. Structural health monitoring of high voltage electrical switch ceramic insulators in seismic areas

    OpenAIRE

    REBILLAT, Marc; BARTHES, Clément; MECHBAL, Nazih; MOSALAM, Khalid M.

    2014-01-01

    International audience; High voltage electrical switches are crucial components to restart rapidly the electrical network right after an earthquake. But there currently exists no automatic procedure to check if these ceramic insulators have suffered after an earthquake, and there exists no method to recertify a given switch. To deploy a vibration-based structural health monitoring method on ceramic insulators a large shake table able to generate accelerations up to 3 g was used. The idea unde...

  10. A high voltage DC switching power supply of corona discharge for ozone tube

    International Nuclear Information System (INIS)

    Ketkaew, Siseerot

    2007-08-01

    Full text: This paper presents a study of design and construction of a high voltage DC switching power supply for corona generating of ozone gas generating. This supply uses fly back converter at 3 k Vdc 30 khz and controls its operation using PWM techniques. I C TL494 is controlled of the switching. The testing of supply by putting high voltage to ozone gas tube at one-hour, the oxygen quantity 21 % of air, which ozone tube model enables ozone gas generating capacity of 95.2 mgO3/hr

  11. Simulation and analysis of transient over voltages due to capacitor banks switching

    International Nuclear Information System (INIS)

    Jadid, Sh.; Yazdanpanah, D.

    2002-01-01

    The switching of any capacitor bank produces over voltages. Transient overvoltage will always occur in the switching device, the switching of shunt capacitor bank has become the most common source of transient voltage on power systems. Transient over voltages due to switching the capacitor bands hurt not only to the capacitor banks, but also to other equipment, such as circuit breakers and transformers. Several methods are available for reducing energising transients. These devices include pre-insertion resistors, pre-insertion inductors,synchronous closing, and MOV arresters. However, not all are practical or economical. The other important problem is existence of capacitor banks in presence of harmonics.Capacitors do not produce harmonics;however,the addition of capacitors to the electrical system will change the frequency response characteristics of the system will change the frequency response characteristics of the system, and in some cases can result in magnification of the voltage and current distortion in the system. In other word in presence of harmonic-producing loads,the capacitors used for power factor correction,may cause parallel resonance with the system inductance, so they increase the total harmonic distortion of voltage and current waveforms

  12. Phase diagrams and switching of voltage and magnetic field in dilute magnetic semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Escobedo, R. [Departamento de Matematica Aplicada y Ciencias de la Computacion, Universidad de Cantabria, 39005 Santander (Spain); Carretero, M.; Bonilla, L.L. [G. Millan Institute, Fluid Dynamics, Nanoscience and Industrial Maths., Universidad Carlos III de Madrid, 28911 Leganes (Spain); Unidad Asociada al Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain); Platero, G. [Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain)

    2010-04-15

    The response of an n-doped dc voltage biased II-VI multi-quantum well dilute magnetic semiconductor nanostructure having its first well doped with magnetic (Mn) impurities is analyzed by sweeping wide ranges of both the voltage and the Zeeman level splitting induced by an external magnetic field. The level splitting versus voltage phase diagram shows regions of stable self-sustained current oscillations immersed in a region of stable stationary states. Transitions between stationary states and self-sustained current oscillations are systematically analyzed by both voltage and level splitting abrupt switching. Sudden voltage or/and magnetic field changes may switch on current oscillations from an initial stationary state, and reciprocally, current oscillations may disappear after sudden changes of voltage or/and magnetic field changes into the stable stationary states region. The results show how to design such a device to operate as a spin injector and a spin oscillator by tuning the Zeeman splitting (through the applied external magnetic field), the applied voltage and the sample configuration parameters (doping density, barrier and well widths, etc.) to select the desired stationary or oscillatory behavior. Phase diagram of Zeeman level splitting {delta} vs. dimensionless applied voltage {phi} for N = 10 QWs. White region: stable stationary states; black: stable self-sustained current oscillations. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Mobile medium-voltage switching system. Temporary standby power supply in record time; Mobile Mittelspannungsschaltanlage. Vorlaeufige Wiederversorgung in Rekordzeit

    Energy Technology Data Exchange (ETDEWEB)

    Thiery, Matthias; Schwarz, Stefan [Siemens AG, Mannheim (Germany); Wingerter, Dieter [BASF SE, Ludwigshafen (Germany); Doering, Holger [B. Goebel und Sohn GmbH, Asschaffenburg (Germany). Fahrzeugbau

    2011-02-28

    BASF SE Ludwigshafen operates more than 100 medium-voltage switching stations for power supply to its plants. The complexity of the production plants and production method make it necessary to have immediate standby power supply in case of interruption of a medium-voltage switching station. For this purpose, a transportable emergency container was acquired that contains a medium-voltage switching system. Power can be supplied at very short notice, simply by plugging the necessary cable connections. No cranes or other tools are required for installation. The emergency container is designed for use at varying voltage levels and can be transported by road to other BASF sites in Europe. The switching station is a gas-insulated medium-voltage switching station 8DA10 by Siemens, designed for operating voltages of 6, 10, 20, and 35 kW.

  14. The development of high-voltage repetitive low-jitter corona stabilized triggered switch

    Science.gov (United States)

    Geng, Jiuyuan; Yang, Jianhua; Cheng, Xinbing; Yang, Xiao; Chen, Rong

    2018-04-01

    The high-power switch plays an important part in a pulse power system. With the trend of pulse power technology toward modularization, miniaturization, and accuracy control, higher requirements on electrical trigger and jitter of the switch have been put forward. A high-power low-jitter corona-stabilized triggered switch (CSTS) is designed in this paper. This kind of CSTS is based on corona stabilized mechanism, and it can be used as a main switch of an intense electron-beam accelerator (IEBA). Its main feature was the use of an annular trigger electrode instead of a traditional needle-like trigger electrode, taking main and side trigger rings to fix the discharging channels and using SF6/N2 gas mixture as its operation gas. In this paper, the strength of the local field enhancement was changed by a trigger electrode protrusion length Dp. The differences of self-breakdown voltage and its stability, delay time jitter, trigger requirements, and operation range of the switch were compared. Then the effect of different SF6/N2 mixture ratio on switch performance was explored. The experimental results show that when the SF6 is 15% with the pressure of 0.2 MPa, the hold-off voltage of the switch is 551 kV, the operating range is 46.4%-93.5% of the self-breakdown voltage, the jitter is 0.57 ns, and the minimum trigger voltage requirement is 55.8% of the peak. At present, the CSTS has been successfully applied to an IEBA for long time operation.

  15. Reversible voltage dependent transition of abnormal and normal bipolar resistive switching.

    Science.gov (United States)

    Wang, Guangyu; Li, Chen; Chen, Yan; Xia, Yidong; Wu, Di; Xu, Qingyu

    2016-11-14

    Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoO x layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transition of abnormal and normal bipolar resistive switching (BRS) in dependence on the maximum voltage was observed. At room temperature, below a critical maximum voltage of 2.6 V, butterfly shaped I-V curves of abnormal BRS has been observed with low resistance state (LRS) to high resistance state (HRS) transition in both polarities and always LRS at zero field. Above 2.6 V, normal BRS was observed, and HRS to LRS transition happened with increasing negative voltage applied. Temperature dependent I-V measurements showed that the critical maximum voltage increased with decreasing temperature, suggesting the thermal activated motion of oxygen vacancies. Abnormal BRS has been explained by the partial compensation of electric field from the induced dipoles opposite to the applied voltage, which has been demonstrated by the clear amplitude-voltage and phase-voltage hysteresis loops observed by piezoelectric force microscopy. The normal BRS was due to the barrier modification at Pt/MoO x interface by the accumulation and depletion of oxygen vacancies.

  16. A Zero-Voltage Switching Control Strategy for Dual Half-Bridge Cascaded Three-Level DC/DC Converter with Balanced Capacitor Voltages

    DEFF Research Database (Denmark)

    Liu, Dong; Wang, Yanbo; Chen, Zhe

    2017-01-01

    The input capacitor's voltages are unbalanced under the conventional control strategy in a dual half-bridge cascaded three-level (TL) DC/DC converter, which would affect the high voltage stresses on the capacitors. This paper proposes a pulse-wide modulation (PWM) strategy with two working modes...... for the dual half-bridge cascaded TL DC/DC converter, which can realize the zero-voltage switching (ZVS). More significantly, a capacitor voltage balance control is proposed by alternating the two working modes of the proposed ZVS PWM strategy, which can eliminate the voltage unbalance on the four input...... capacitors. Therefore, the proposed control strategy can improve the converter's performances in: 1) reducing the switching losses and noises of the power switches; and 2) reducing the voltage stresses on the input capacitors. Finally, the simulation results are conducted to verify the proposed control...

  17. Assumption or Fact? Line-to-Neutral Voltage Expression in an Unbalanced 3-Phase Circuit during Inverter Switching

    Science.gov (United States)

    Masrur, M. A.

    2009-01-01

    This paper discusses the situation in a 3-phase motor or any other 3-phase system operating under unbalanced operating conditions caused by an open fault in an inverter switch. A dc voltage source is assumed as the input to the inverter, and under faulty conditions of the inverter switch, the actual voltage applied between the line to neutral…

  18. Protection relay of phase-shifting device with thyristor switch for high voltage power transmission lines

    Science.gov (United States)

    Lachugin, V. F.; Panfilov, D. I.; Akhmetov, I. M.; Astashev, M. G.; Shevelev, A. V.

    2014-12-01

    Problems of functioning of differential current protection systems of phase shifting devices (PSD) with mechanically changed coefficient of transformation of shunt transformer are analyzed. Requirements for devices of protection of PSD with thyristor switch are formulated. Based on use of nonlinear models of series-wound and shunt transformers of PSD modes of operation of major protection during PSD, switching to zero load operation and to operation under load and during short circuit operation were studied for testing PSD with failures. Use of the principle of duplicating by devices of differential current protection (with realization of functions of breaking) of failures of separate pares of PSD with thyristor switch was substantiated. To ensure protection sensitivity to the shunt transformer winding short circuit, in particular, to a short circuit that is not implemented in the current differential protection for PSD with mechanical switch, the differential current protection reacting to the amount of primary ampere-turns of high-voltage and low-voltage winding of this transformer was designed. Studies have shown that the use of differential current cutoff instead of overcurrent protection for the shunt transformer wndings allows one to provide the sensitivity during thyristor failure with the formation of a short circuit. The results of simulation mode for the PSD with switch thyristor designed to be installed as switching point of Voskhod-Tatarskaya-Barabinsk 220 kV transmission line point out the efficiency of the developed solutions that ensure reliable functioning of the PSD.

  19. Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves

    Science.gov (United States)

    Schmidt, Georg; Goeckeritz, Robert; Homonnay, Nico; Mueller, Alexander; Fuhrmann, Bodo

    Resistive switching has already been reported in organic spin valves (OSV), however, its origin is still unclear. We have fabricated nanosized OSV based on La0.7Sr0.3MnO3/Alq3/Co. These devices show fully reversible resistive switching of up to five orders of magnitude. The magnetoresistance (MR) is modulated during the switching process from negative (-70%) to positive values (+23%). The results are reminiscent of experiments claiming magnetoelectric coupling in LSMO based tunneling structures using ferroelectric barriers. By analyzing the I/V characteristics of the devices we can show that transport is dominated by tunneling through pinholes. The resistive switching is caused by voltage induced creation and motion of oxygen vacancies at the LSMO surface, however, the resulting tunnel barrier is complemented by a second adjacent barrier in the organic semiconductor. Our model shows that the barrier in the organic material is constant, causing the initial MR while the barrier in the LMSO can be modulated by the voltage resulting in the resistive switching and the modulation of the MR as the coupling to the states in the LSMO changes. A switching caused by LSMO only is also supported by the fact that replacing ALQ3 by H2PC yields almost identical results. Supported by the DFG in the SFB762.

  20. Evaluation of the contact switch materials in high voltage power supply for generate of underwater shockwave by electrical discharge

    Directory of Open Access Journals (Sweden)

    K Higa

    2016-10-01

    Full Text Available We have developed the high voltage power-supply unit by Cockcroft-Walton circuit for ingenerate high pressure due to underwater shockwave by electrical discharge. This high voltage power supply has the problem of the metal contact switch operation that contact switch stop by melting and bonding due to electrical spark. We have studied the evaluation of materials of contact switch for the reducing electrical energy loss and the problem of contact switch operation. In this research, measurement of discharge voltage and high pressure due to underwater shockwave was carried out using the contact switch made of different materials as brass plate, brass-carbon plate-brass and carbon block. The contact switch made of carbon is effective to reduce energy loss and problem of contactor switch operation.

  1. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.; Andersen, Michael A.E.

    2005-07-01

    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify design, increase efficiency and integration level, reduce product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented. (au)

  2. State-plane analysis of zero-voltage-switching resonant dc/dc power converters

    Science.gov (United States)

    Kazimierczuk, Marian K.; Morse, William D.

    The state-plane analysis technique for the zero-voltage-switching resonant dc/dc power converter family of topologies, namely the buck, boost, buck-boost, and Cuk converters is established. The state plane provides a compression of information that allows the designer to uniquely examine the nonlinear dynamics of resonant converter operation. Utilizing the state plane, resonant converter modes of operation are examined and the switching frequencies are derived for the boundaries between these modes, including the boundary of energy conversion.

  3. Fast switching thyristor applied in nanosecond-pulse high-voltage generator with closed transformer core.

    Science.gov (United States)

    Li, Lee; Bao, Chaobing; Feng, Xibo; Liu, Yunlong; Fochan, Lin

    2013-02-01

    For a compact and reliable nanosecond-pulse high-voltage generator (NPHVG), the specification parameter selection and potential usage of fast controllable state-solid switches have an important bearing on the optimal design. The NPHVG with closed transformer core and fast switching thyristor (FST) was studied in this paper. According to the analysis of T-type circuit, the expressions for the voltages and currents of the primary and secondary windings on the transformer core of NPHVG were deduced, and the theoretical maximum analysis was performed. For NPHVG, the rise-rate of turn-on current (di/dt) across a FST may exceed its transient rating. Both mean and maximum values of di/dt were determined by the leakage inductances of the transformer, and the difference is 1.57 times. The optimum winding ratio is helpful to getting higher voltage output with lower specification FST, especially when the primary and secondary capacitances have been established. The oscillation period analysis can be effectively used to estimate the equivalent leakage inductance. When the core saturation effect was considered, the maximum di/dt estimated from the oscillating period of the primary current is more accurate than one from the oscillating period of the secondary voltage. Although increasing the leakage inductance of NPHVG can decrease di/dt across FST, it may reduce the output peak voltage of the NPHVG.

  4. Design automation of switching mode high voltage power supply for nuclear instruments

    International Nuclear Information System (INIS)

    El-araby, S.M.S.

    1999-01-01

    This paper presents an automation procedure for the design of switching mode high voltage power supplies, using Pc programming facility. The procedure permits the selection of a ready made or designed ferrite transformer. This selection could be achieved according to the designer desire; as the program includes complete information about ready made ferrite transformer through complete database. The procedure is based on suggested template circuit. Micro-Cap IV simulation package is used to verify the desired high voltage power supply design. Simulation results agree quite well with suggested procedure's results. Design aspects and development needed to increase automation capabilities are also discussed

  5. High-voltage switching for in-flight capture of keV antiprotons in a Penning trap

    International Nuclear Information System (INIS)

    Fei, X.; Davisson, R.; Gabrielse, G.

    1987-01-01

    The recently observed in-flight capture of keV antiprotons and protons in a Penning trap requires that the -3-kV potentials on electrodes of a Penning trap near 4.2 K be switched on and off with switching times less than 20 ns. These rapidly switched potentials are applied via transmission lines which are not terminated at the trap, thereby avoiding unacceptable heat load on the helium Dewar. Simple high-voltage switching circuits are constructed using krytrons and reed relays. A krytron provides the rapid switching and stays on just long enough for a reed relay to kick in and maintain the switched state indefinitely

  6. Voltage switching technique for detecting nuclear spin polarization in a quantum dot

    International Nuclear Information System (INIS)

    Takahashi, Ryo; Kono, Kimitoshi; Tarucha, Seigo; Ono, Keiji

    2010-01-01

    We have introduced a source-drain voltage switching technique for studying nuclear spins in a vertical double quantum dot. Switching the source-drain voltage between the spin-blockade state and the zero-bias Coulomb blockade state can tune the energy difference between the spin singlet and triplet, and effectively turn on/off the hyperfine interaction. Since the change in the nuclear spin state affects the source-drain current, nuclear spin properties can only be detected by transport measurement. Using this technique, we have succeeded in measuring the timescale of nuclear spin depolarization. Furthermore, combining this technique and an RF ac magnetic field, we successfully detected continuous-wave NMR signals of 75 As, 69 Ga, and 71 Ga, which are contained in a quantum dot. (author)

  7. Thickness dependence of voltage-driven magnetization switching in FeCo/PI/piezoelectric actuator heterostructures

    Science.gov (United States)

    Cui, B. S.; Guo, X. B.; Wu, K.; Li, D.; Zuo, Y. L.; Xi, L.

    2016-03-01

    Strain mediated magnetization switching of ferromagnetic/substrate/piezoelectric actuator heterostructures has become a hot issue due to the advantage of low-power consumption. In this work, Fe65Co35 thin films were deposited on a flexible polyamides (PI) substrate, which has quite low Young’s module (~4 GPa for PI as compared to ~180 GPa for Si) and benefits from complete transfer of the strain from the piezoelectric actuator to magnetic thin films. A complete 90° transition of the magnetic easy axis was realized in 50 nm thick FeCo films under the voltage of 70 V, while a less than 90° rotation angle of the magnetic easy axis direction was observed in other samples, which was ascribed to the distribution of the anisotropy field and/or the orthogonal misalignment between stress induced anisotropy and original uniaxial anisotropy. A model considering two uniaxial anisotropies with orthogonal arrangement was used to quantitatively understand the observed results and the linear-like voltage dependent anisotropy field, especially for 10 nm FeCo films, in which the switching mechanism along the easy axis direction can be explained by the domain wall depinning model. It indicates that the magnetic domain-wall movement velocity may be controlled by strain through tuning the energy barrier of the pinning in heterostructures. Moreover, voltage-driven 90° magnetization switching with low-power consumption was achieved in this work.

  8. Thickness dependence of voltage-driven magnetization switching in FeCo/PI/piezoelectric actuator heterostructures

    International Nuclear Information System (INIS)

    Cui, B S; Guo, X B; Wu, K; Li, D; Zuo, Y L; Xi, L

    2016-01-01

    Strain mediated magnetization switching of ferromagnetic/substrate/piezoelectric actuator heterostructures has become a hot issue due to the advantage of low-power consumption. In this work, Fe 65 Co 35 thin films were deposited on a flexible polyamides (PI) substrate, which has quite low Young’s module (∼4 GPa for PI as compared to ∼180 GPa for Si) and benefits from complete transfer of the strain from the piezoelectric actuator to magnetic thin films. A complete 90° transition of the magnetic easy axis was realized in 50 nm thick FeCo films under the voltage of 70 V, while a less than 90° rotation angle of the magnetic easy axis direction was observed in other samples, which was ascribed to the distribution of the anisotropy field and/or the orthogonal misalignment between stress induced anisotropy and original uniaxial anisotropy. A model considering two uniaxial anisotropies with orthogonal arrangement was used to quantitatively understand the observed results and the linear-like voltage dependent anisotropy field, especially for 10 nm FeCo films, in which the switching mechanism along the easy axis direction can be explained by the domain wall depinning model. It indicates that the magnetic domain-wall movement velocity may be controlled by strain through tuning the energy barrier of the pinning in heterostructures. Moreover, voltage-driven 90° magnetization switching with low-power consumption was achieved in this work. (paper)

  9. Room temperature resistive state switching with hysteresis in GdMnO3 thin film with low threshold voltage

    International Nuclear Information System (INIS)

    Nath, Rajib; Raychaudhuri, A. K.; Mukovskii, Ya. M.; Andreev, N.; Chichkov, Vladimir

    2014-01-01

    In this paper, we report a room temperature resistive state switching with hysteresis, in a thin film of GdMnO 3 grown on NdGaO 3 substrate. The switched states have a resistance ratio ≈10 3 . The switching is unipolar in nature, with a low set voltage <3 V, while the reset voltage <0.3 V. The switching occurs between a high resistance polaronic insulating state and a low resistance metallic state. The resistance state transition has been ascribed to an electronic mechanism that originates from co-existing phases (created by charge disproportionation) that can undergo a percolative transition enabled by the applied bias

  10. Investigating the Effect of Voltage-Switching on Low-Energy Task Scheduling in Hard Real-Time Systems

    National Research Council Canada - National Science Library

    Swaminathan, Vishnu; Chakrabarty, Krishnendu

    2005-01-01

    We investigate the effect of voltage-switching on task execution times and energy consumption for dual-speed hard real-time systems, and present a new approach for scheduling workloads containing periodic tasks...

  11. Online Optimal Switching Frequency Selection for Grid-Connected Voltage Source Inverters

    Directory of Open Access Journals (Sweden)

    Saher Albatran

    2017-12-01

    Full Text Available Enhancing the performance of the voltage source inverters (VSIs without changing the hardware structure has recently acquired an increased amount of interest. In this study, an optimization algorithm, enhancing the quality of the output power and the efficiency of three-phase grid connected VSIs is proposed. Towards that end, the proposed algorithm varies the switching frequency (fsw to maintain the best balance between switching losses of the insulated-gate-bipolar-transistor (IGBT power module as well as the output power quality under all loading conditions, including the ambient temperature effect. Since there is a contradiction with these two measures in relation to the switching frequency, the theory of multi-objective optimization is employed. The proposed algorithm is executed on the platform of Altera® DE2-115 field-programmable-gate-array (FPGA in which the optimal value of the switching frequency is determined online without the need for heavy offline calculations and/or lookup tables. With adopting the proposed algorithm, there is an improvement in the VSI efficiency without degrading the output power quality. Therefore, the proposed algorithm enhances the lifetime of the IGBT power module because of reduced variations in the module’s junction temperature. An experimental prototype is built, and experimental tests are conducted for the verification of the viability of the proposed algorithm.

  12. A zero-voltage-switched three-phase interleaved buck converter

    Science.gov (United States)

    Hsieh, Yao-Ching; Huang, Bing-Siang; Lin, Jing-Yuan; Pham, Phu Hieu; Chen, Po-Hao; Chiu, Huang-Jen

    2018-04-01

    This paper proposes a three-phase interleaved buck converter which is composed of three identical paralleled buck converters. The proposed solution has three shunt inductors connected between each other of three basic buck conversion units. With the help of the shunt inductors, the MOSFET parasitic capacitances will resonate to achieve zero-voltage-switching. Furthermore, the decreasing rate of the current through the free-wheeling diodes is limited, and therefore, their reverse-recovery losses can be minimised. The active power switches are controlled by interleaved pulse-width modulation signals to reduce the input and output current ripples. Therefore, the filtering capacitances on the input and output sides can be reduced. The power efficiency is measured to be as high as 98% in experiment with a prototype circuit.

  13. Parameterized Analysis of Zero Voltage Switching in Resonant Converters for Optimal Electrode Layout of Piezoelectric Transformers

    DEFF Research Database (Denmark)

    Meyer, Kaspar Sinding; Andersen, Michael Andreas E.; Jensen, Flemming

    2008-01-01

    Ring shaped PTs (Piezoelectric Transformers) are an attractive alternative to magnetics in power converters. The achievable energy efficiency is 98% and the power density is up to 30W/cm3. Additionally power supplies based on PTs display low levels of conducted and radiated EMI due to power...... conversion based on the piezoelectric effect. Rooted in the physics of this effect, both the in- and output terminal of a PT has a noticeable parasitic capacitance. In a common half-bridge power stage without any supporting magnetic components, the input parasitic capacitance can lead to hard switching...... losses that are in the range of the actual power rating of a specific PT. In this paper it is demonstrated how the electrode layout of a PT can be designed to enable ZVS (Zero Voltage Switching). This optimization is made simple with a novel set of accurate and simple symbolic equations which relates ZVS...

  14. Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

    Directory of Open Access Journals (Sweden)

    Robert Göckeritz

    2016-04-01

    Full Text Available Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

  15. High voltage, high power operation of the plasma erosion opening switch

    International Nuclear Information System (INIS)

    Neri, J.M.; Boller, J.R.; Ottinger, P.F.; Weber, B.V.; Young, F.C.

    1987-01-01

    A Plasma Erosion Opening Switch (PEOS) is used as the opening switch for a vacuum inductive storage system driven by a 1.8-MV, 1.6-TW pulsed power generator. A 135-nH vacuum inductor is current charged to ∼750 kA in 50 ns through the closed PEOS which then opens in <10 ns into an inverse ion diode load. Electrical diagnostics and nuclear activations from ions accelerated in the diode yield a peak load voltage (4.25 MV) and peak load power (2.8 TW) that are 2.4 and 1.8 times greater than ideal matched load values for the same generator pulse

  16. Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

    Energy Technology Data Exchange (ETDEWEB)

    Sharath, S. U., E-mail: sharath@oxide.tu-darmstadt.de; Kurian, J.; Komissinskiy, P.; Hildebrandt, E.; Alff, L. [Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Bertaud, T.; Walczyk, C.; Calka, P. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

    2014-08-18

    The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

  17. Voltage-Controlled Square/Triangular Wave Generator with Current Conveyors and Switching Diodes

    Directory of Open Access Journals (Sweden)

    Martin Janecek

    2012-12-01

    Full Text Available A novel relaxation oscillator based on integrating the diode-switched currents and Schmitt trigger is presented. It is derived from a known circuit with operational amplifiers where these active elements were replaced by current conveyors. The circuit employs only grounded resistances and capacitance and is suitable for high frequency square and triangular signal generation. Its frequency can be linearly and accurately controlled by voltage that is applied to a high-impedance input. Computer simulation with a model of a manufactured conveyor prototype verifies theoretic assumptions.

  18. Electron tunnelling through single azurin molecules can be on/off switched by voltage pulses

    Energy Technology Data Exchange (ETDEWEB)

    Baldacchini, Chiara [Biophysics and Nanoscience Centre, DEB-CNISM, Università della Tuscia, I-01100 Viterbo (Italy); Institute of Agro-Environmental and Forest Biology, CNR, I-05010 Porano (Italy); Kumar, Vivek; Bizzarri, Anna Rita; Cannistraro, Salvatore, E-mail: cannistr@unitus.it [Biophysics and Nanoscience Centre, DEB-CNISM, Università della Tuscia, I-01100 Viterbo (Italy)

    2015-05-04

    Redox metalloproteins are emerging as promising candidates for future bio-optoelectronic and nano-biomemory devices, and the control of their electron transfer properties through external signals is still a crucial task. Here, we show that a reversible on/off switching of the electron current tunnelling through a single protein can be achieved in azurin protein molecules adsorbed on gold surfaces, by applying appropriate voltage pulses through a scanning tunnelling microscope tip. The observed changes in the hybrid system tunnelling properties are discussed in terms of long-sustained charging of the protein milieu.

  19. A plasma switch synchronous closing operations in high-voltage networks

    International Nuclear Information System (INIS)

    Mourente, P.

    1984-01-01

    Overvoltages and overcurrent arising in energizing or in fast reclosing operations are a concerning problem in high-voltage networks. Reduction of overvoltages and overcurrents is possible using the synchronous closing technique. Some attempts have been done to perform the synchronous closing with conventional circuit-breakers. But since the requirements to synchronous closing and to current interruption are very contradictory this technique is not yet a common practice. Three simple cases may be used as examples to show the benefits of synchronous closing; energizaton of grounded star capacitor bank; back-to-back switching of large capacitor banks; and fast reclosing on transmission lines

  20. Fully on-chip switched capacitor NMOS low dropout voltage regulator

    CERN Document Server

    Camacho, D; Camacho, Daniel; Moreira, Paulo

    2010-01-01

    This paper presents a 1.5 V 50 mA low dropout voltage (LDO) regulator using an NMOS transistor as the output pass element. Continuous time,operation of the LDO is achieved using a new switched floating capacitor scheme that raises the gate voltage of the pass element. The regulator has a 0.2 V dropout at a 50 mA load and is stable for a wide load current range with loading capacitances up to 50 pF. The output variation when a full load step is applied is 300 mV and the recovery time is below 0.3 mu s. it is designed in a 0.13 mu m CMOS process with an area of 0.008 mm(2) and its operation does not require any external component.

  1. Selective irradiation for fast switching thyristor with low forward voltage drop

    International Nuclear Information System (INIS)

    Brown, J.L.

    1975-01-01

    The switching speed of a thyristor is increased without correspondingly increasing the forward voltage drop by selectively irradiating at least portions of the PN junction between the conducting and gating portions, and 5 to 30 percent of the adjacent surface area of the conducting portions of the device. 50 to 100 percent of the surface area of the gating portions, and the peripheral portions can also be irradiated at the same time to decrease gate sensitivity and increase blocking voltage of the thyristor, respectively. Preferably, the thyristor is irradiated with electron radiation which preferably is of an intensity greater than 1 MeV and most desirably about 2 MeV. The electron irradiation is preferably to a dosage of between about 1 x 10 13 electrons/cm 2 and 1 x 10 15 electrons/cm 2 . (auth)

  2. Design of High-Voltage Switch-Mode Power Amplifier Based on Digital-Controlled Hybrid Multilevel Converter

    Directory of Open Access Journals (Sweden)

    Yanbin Hou

    2016-01-01

    Full Text Available Compared with conventional Class-A, Class-B, and Class-AB amplifiers, Class-D amplifier, also known as switching amplifier, employs pulse width modulation (PWM technology and solid-state switching devices, capable of achieving much higher efficiency. However, PWM-based switching amplifier is usually designed for low-voltage application, offering a maximum output voltage of several hundred Volts. Therefore, a step-up transformer is indispensably adopted in PWM-based Class-D amplifier to produce high-voltage output. In this paper, a switching amplifier without step-up transformer is developed based on digital pulse step modulation (PSM and hybrid multilevel converter. Under the control of input signal, cascaded power converters with separate DC sources operate in PSM switch mode to directly generate high-voltage and high-power output. The relevant topological structure, operating principle, and design scheme are introduced. Finally, a prototype system is built, which can provide power up to 1400 Watts and peak voltage up to ±1700 Volts. And the performance, including efficiency, linearity, and distortion, is evaluated by experimental tests.

  3. Cable Insulation Breakdowns in the Modulator with a Switch Mode High Voltage Power Supply

    CERN Document Server

    Cours, A

    2004-01-01

    The Advanced Photon Source modulators are PFN-type pulsers with 40 kV switch mode charging power supplies (PSs). The PS and the PFN are connected to each other by 18 feet of high-voltage (HV) cable. Another HV cable connects two separate parts of the PFN. The cables are standard 75 kV x-ray cables. All four cable connectors were designed by the PS manufacturer. Both cables were operating at the same voltage level (about 35 kV). The PS’s output connector has never failed during five years of operation. One of the other three connectors failed approximately five times more often than the others. In order to resolve the failure problem, a transient analysis was performed for all connectors. It was found that transient voltage in the connector that failed most often was subjected to more high-frequency, high-amplitude AC components than the other three connectors. It was thought that these components caused partial discharge in the connector insulation and led to the insulation breakdown. Modification o...

  4. Power grid current harmonics mitigation drawn on low voltage rated switching devices with effortless control

    Energy Technology Data Exchange (ETDEWEB)

    Marques, Hugo S.; Anunciada, Victor; Borges, Beatriz V. [Power Electronics Group, Instituto de Telecomunicacoes, Lisbon (Portugal); Instituto Superior Tecnico - Universidade Tecnica de Lisboa, Lisbon (Portugal)

    2010-01-15

    The great majority of the existing hybrid active power filter solutions is normally focused in 3{phi} systems and, in general, concentrates its domain of application in specific loads with deterministic behavior. Because common use grids do not exhibit these characteristics, it is mandatory to develop solutions for more generic scenarios, encouraging the use of less classical hybrid solutions. In fact, due to the widely use of switch mode converters in a great variety of consumer electronics, the problematic of mains current harmonic mitigation is no longer an exclusive matter of 3{phi} systems. The contribution of this paper is to present a shunt hybrid active power filter topology, initially conceived to work in 1{phi} domestic grids, able to operate the inverter at a voltage rate that can be lower than 10% of the mains voltage magnitude, even under nonspecific working conditions. In addition, the results shown in this paper demonstrate that this topology can, without lack of generality, be suitable to medium voltage (1{phi} or 3{phi}) systems. A new control approach for the proposed topology is discussed in this paper. The control method exhibits an extremely simple architecture requiring single point current sensing only, with no need for any kind of reference. Its practical implementation can be fulfilled by using very few, common use, operational amplifiers. The principle of operation, design criteria, simulation predictions and experimental results are presented and discussed. (author)

  5. Flexible, ferroelectric nanoparticle doped polymer dispersed liquid crystal devices for lower switching voltage and nanoenergy generation

    Science.gov (United States)

    Nimmy John, V.; Varanakkottu, Subramanyan Namboodiri; Varghese, Soney

    2018-06-01

    Flexible polymer dispersed liquid crystal (F-PDLC) devices were fabricated using transparent conducting ITO/PET film. Polymerization induced phase separation (PIPS) method was used for pure and ferroelectric BaTiO3 (BTO) and ZnO doped PDLC devices. The distribution of nanoparticles in the PDLC and the formation of micro cavities were studied using field emission scanning electron microscopy (FESEM). It was observed that the addition of ferroelectric BTO nanoparticles has reduced the threshold voltage (Vth) and saturation voltage (Vsat) of FNP-PDLC by 85% and 41% respectively due to the spontaneous polarization of ferroelectric nanoparticles. The ferroelectric properties of BTO and ZnO in the fabricated devices were investigated using dynamic contact electrostatic force microscopy (DC EFM). Flexing the device can generate a potential due to the piezo-tribo electric effect of the ferroelectric nanomaterial doped in the PDLC matrix, which could be utilized as an energy generating system. The switching voltage after multiple flexing was also studied and found to be in par with non-flexing situations.

  6. Design and Implementation of a High Efficiency, Low Component Voltage Stress, Single-Switch High Step-Up Voltage Converter for Vehicular Green Energy Systems

    Directory of Open Access Journals (Sweden)

    Yu-En Wu

    2016-09-01

    Full Text Available In this study, a novel, non-isolated, cascade-type, single-switch, high step-up DC/DC converter was developed for green energy systems. An integrated coupled inductor and voltage lift circuit were applied to simplify the converter structure and satisfy the requirements of high efficiency and high voltage gain ratios. In addition, the proposed structure is controllable with a single switch, which effectively reduces the circuit cost and simplifies the control circuit. With the leakage inductor energy recovery function and active voltage clamp characteristics being present, the circuit yields optimizable conversion efficiency and low component voltage stress. After the operating principles of the proposed structure and characteristics of a steady-state circuit were analyzed, a converter prototype with 450 W, 40 V of input voltage, 400 V of output voltage, and 95% operating efficiency was fabricated. The Renesas MCU RX62T was employed to control the circuits. Experimental results were analyzed to validate the feasibility and effectiveness of the proposed system.

  7. Investigating the Effect of Voltage-Switching on Low-Energy Task Scheduling in Hard Real-Time Systems

    Science.gov (United States)

    2005-01-01

    We investigate the effect of voltage-switching on task execution times and energy consumption for dual-speed hard real - time systems , and present a...scheduling algorithm and apply it to two real-life task sets. Our results show that energy can be conserved in embedded real - time systems using energy...aware task scheduling. We also show that switching times have a significant effect on the energy consumed in hard real - time systems .

  8. Medium-voltage switching devices: State-of-the art on technical standards; Mittelspannungs-Schaltanlagen: Stand der technischen Normen

    Energy Technology Data Exchange (ETDEWEB)

    Voss, Gerhard [Ingenieurbuero IGV Elektrotechnik, Ladenburg (Germany)

    2008-11-15

    With enhanced exchange box systems many low voltage switch devices can be equipped more compact (less volume demand), cost friendly and more reliable because of advanced arc discharge safety engineering. Presented is utilization and operation in the facility managment and industrial applications in detail. In the last years operation-important standards have been revised for planners and users. So users and planners have to occupy with new standards for medium-voltage switching devices. This knowledge forms the conditions to design devices in future extensively to individual demands of the company and according to standards. (GL)

  9. A High-Voltage Low-Power Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices for LED Drivers

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2018-01-01

    Previous research on switched-capacitor DC-DC converters has focused on low-voltage and/or high-power ranges where the efficiencies are dominated by conduction loss. Switched-capacitor DC-DC converters at high-voltage (> 100 V) low-power (high efficiency and high power density...... are anticipated to emerge. This paper presents a switched-capacitor converter with an input voltage up to 380 V (compatible with rectified European mains) and a maximum output power of 10 W. GaN switches and SiC diodes are analytically compared and actively combined to properly address the challenges at high......-voltage low-current levels, where switching loss becomes significant. Further trade-off between conduction loss and switching loss is experimentally optimized with switching frequencies. Three variant designs of the proposed converter are implemented, and the trade-off between the efficiency and the power...

  10. Voltage-induced switching of an antiferromagnetically ordered topological Dirac semimetal

    Science.gov (United States)

    Kim, Youngseok; Kang, Kisung; Schleife, André; Gilbert, Matthew J.

    2018-04-01

    An antiferromagnetic semimetal has been recently identified as a new member of topological semimetals that may host three-dimensional symmetry-protected Dirac fermions. A reorientation of the Néel vector may break the underlying symmetry and open a gap in the quasiparticle spectrum, inducing the (semi)metal-insulator transition. Here, we predict that such a transition may be controlled by manipulating the chemical potential location of the material. We perform both analytical and numerical analysis on the thermodynamic potential of the model Hamiltonian and find that the gapped spectrum is preferred when the chemical potential is located at the Dirac point. As the chemical potential deviates from the Dirac point, the system shows a possible transition from the gapped to the gapless phase and switches the corresponding Néel vector configuration. We perform density functional theory calculations to verify our analysis using a realistic material and discuss a two terminal transport measurement as a possible route to identify the voltage-induced switching of the Néel vector.

  11. Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

    Science.gov (United States)

    Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

    2011-01-01

    A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

  12. Effect of gold nano-particles on switch-on voltage and relaxation frequency of nematic liquid crystal cell

    Directory of Open Access Journals (Sweden)

    M. Inam

    2011-12-01

    Full Text Available We report the observation of large changes in the electro-optical properties of nematic liquid crystal (NLC due to inclusion of small concentration of 10 nm diameter gold nanoparticles (GNPs. It is observed that GNPs lower switch-on voltage and also lower the relaxation frequency with applied voltage (AC field to NLC cell. These studies of GNP doped NLC cell have been done using optical interferometry and capacity measurement by impedance analyzer. The change in threshold voltage and relaxation frequency by doping GNPs in NLC is explained theoretically.

  13. The recent industrial EB applications in Japan

    International Nuclear Information System (INIS)

    Nakai, Koji; Kashiwagi, Masayuki; Mizusawa, Kenichi

    1995-01-01

    The conventional applications of electron beam processing such as, crosslinking of electric wire and cable insulations, polyethylene foam, and of rubber tire components have been the main part of the EB business for many years. New applications are continuing to appear, however, the growth of the new applications has been relatively slow. Nissin High-Voltage, as one of the worlds leading manufacturers of electron beam equipments, continues to develop and improve EB equipment to meet the requirements of these new applications. In this paper recent EB applications and its improvements are described. (author)

  14. Transformer-assisted PWM zero-voltage switching pole inverter with high output bandwidth applied to linear motor drives

    NARCIS (Netherlands)

    Myrzik, J.M.A.; Duarte, J.L.; Haardt, de P.; Vissers, J.

    2002-01-01

    An application of the transformer-assisted PWM zero-voltage switching pole inverter (TRAP) is described in this paper. The TRAP is based on the auxiliary resonant commutated pole inverter (ARCP), but avoids its disadvantages. This paper describes the converter functionality and its applicability

  15. On-line Monitoring Device for High-voltage Switch Cabinet Partial Discharge Based on Pulse Current Method

    Science.gov (United States)

    Y Tao, S.; Zhang, X. Z.; Cai, H. W.; Li, P.; Feng, Y.; Zhang, T. C.; Li, J.; Wang, W. S.; Zhang, X. K.

    2017-12-01

    The pulse current method for partial discharge detection is generally applied in type testing and other off-line tests of electrical equipment at delivery. After intensive analysis of the present situation and existing problems of partial discharge detection in switch cabinets, this paper designed the circuit principle and signal extraction method for partial discharge on-line detection based on a high-voltage presence indicating systems (VPIS), established a high voltage switch cabinet partial discharge on-line detection circuit based on the pulse current method, developed background software integrated with real-time monitoring, judging and analyzing functions, carried out a real discharge simulation test on a real-type partial discharge defect simulation platform of a 10KV switch cabinet, and verified the sensitivity and validity of the high-voltage switch cabinet partial discharge on-line monitoring device based on the pulse current method. The study presented in this paper is of great significance for switch cabinet maintenance and theoretical study on pulse current method on-line detection, and has provided a good implementation method for partial discharge on-line monitoring devices for 10KV distribution network equipment.

  16. An Enhanced Three-Level Voltage Switching State Scheme for Direct Torque Controlled Open End Winding Induction Motor

    Science.gov (United States)

    Kunisetti, V. Praveen Kumar; Thippiripati, Vinay Kumar

    2018-01-01

    Open End Winding Induction Motors (OEWIM) are popular for electric vehicles, ship propulsion applications due to less DC link voltage. Electric vehicles, ship propulsions require ripple free torque. In this article, an enhanced three-level voltage switching state scheme for direct torque controlled OEWIM drive is implemented to reduce torque and flux ripples. The limitations of conventional Direct Torque Control (DTC) are: possible problems during low speeds and starting, it operates with variable switching frequency due to hysteresis controllers and produces higher torque and flux ripple. The proposed DTC scheme can abate the problems of conventional DTC with an enhanced voltage switching state scheme. The three-level inversion was obtained by operating inverters with equal DC-link voltages and it produces 18 voltage space vectors. These 18 vectors are divided into low and high frequencies of operation based on rotor speed. The hardware results prove the validity of proposed DTC scheme during steady-state and transients. From simulation and experimental results, proposed DTC scheme gives less torque and flux ripples on comparison to two-level DTC. The proposed DTC is implemented using dSPACE DS-1104 control board interface with MATLAB/SIMULINK-RTI model.

  17. Novel analytical model for optimizing the pull-in voltage in a flexured MEMS switch incorporating beam perforation effect

    Science.gov (United States)

    Guha, K.; Laskar, N. M.; Gogoi, H. J.; Borah, A. K.; Baishnab, K. L.; Baishya, S.

    2017-11-01

    This paper presents a new method for the design, modelling and optimization of a uniform serpentine meander based MEMS shunt capacitive switch with perforation on upper beam. The new approach is proposed to improve the Pull-in Voltage performance in a MEMS switch. First a new analytical model of the Pull-in Voltage is proposed using the modified Mejis-Fokkema capacitance model taking care of the nonlinear electrostatic force, the fringing field effect due to beam thickness and etched holes on the beam simultaneously followed by the validation of same with the simulated results of benchmark full 3D FEM solver CoventorWare in a wide range of structural parameter variations. It shows a good agreement with the simulated results. Secondly, an optimization method is presented to determine the optimum configuration of switch for achieving minimum Pull-in voltage considering the proposed analytical mode as objective function. Some high performance Evolutionary Optimization Algorithms have been utilized to obtain the optimum dimensions with less computational cost and complexity. Upon comparing the applied algorithms between each other, the Dragonfly Algorithm is found to be most suitable in terms of minimum Pull-in voltage and higher convergence speed. Optimized values are validated against the simulated results of CoventorWare which shows a very satisfactory results with a small deviation of 0.223 V. In addition to these, the paper proposes, for the first time, a novel algorithmic approach for uniform arrangement of square holes in a given beam area of RF MEMS switch for perforation. The algorithm dynamically accommodates all the square holes within a given beam area such that the maximum space is utilized. This automated arrangement of perforation holes will further improve the computational complexity and design accuracy of the complex design of perforated MEMS switch.

  18. The Design of Nanosecond Fast-switch Pulsed High Voltage Power Supply Based on Solid-state

    International Nuclear Information System (INIS)

    Chen Wenguang; Chen Wei; Rao Yihua

    2009-01-01

    The high voltage pulsed power supply is applied in the experiment of the nuclear science widely. It main consist of DC high-voltage power supply (HVPS) and pulse modulator. The high-frequency series-resonant inverter technology and IGBT series technology are used to design the HVPS and the modulator, respectively. The main circuit, control circuit, high voltage transformer and solid-state switch are illuminated in the paper. The apparatus can operate at a maximum output voltage of 6 kilovolt, which can be modulated single pulse and also be modulated by series pulse. A prototype is fabricated and tested, experimental results show that the pulsed power supply is well-designed and rising edge time to meet the nsclass; it can achieve the requirement of rapid modulation. (authors)

  19. Functional model of a high-current high-voltage superconducting switches

    International Nuclear Information System (INIS)

    Menke, Kh.; Shishov, Yu.A.

    1977-01-01

    Considered are problems of superconducting switches (SS) for energy extraction from magnets at a current of several kiloamperes and a voltage of several kilovolts with a time for transition to the normal state of <0.5 ms. SS is made of a wire of 0.5 mm diameter containing 19 strands of Nb-Ti alloy of 65 μm diameter. The wire matrix was etched out, 19 wires of 4.5 m length were braided together. On each of three groups of wires a heater wire of constantan of 0.12 mm diameter and 6 m length was wound. A second heater intended for slow heating during current feeding into the magnet, is wound over the braid. The wires and heaters are parallel connected and impregnated by an epoxy compound. The following main parameters were obtained in SS testing: critical current of 920 A, resistance in the normal state of 2.5 Ohm, and minimum delay time of 0.2 ms at a nominal current of 0.8 of the critical one

  20. Voltage- and current-activated metal–insulator transition in VO2-based electrical switches: a lifetime operation analysis

    Directory of Open Access Journals (Sweden)

    Aurelian Crunteanu, Julien Givernaud, Jonathan Leroy, David Mardivirin, Corinne Champeaux, Jean-Christophe Orlianges, Alain Catherinot and Pierre Blondy

    2010-01-01

    Full Text Available Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal–insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal–insulator transition in VO2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO2-based switching (more than 260 million cycles without failure compared with the voltage-activated mode (breakdown at around 16 million activation cycles. The evolution of the electrical self-oscillations of a VO2-based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

  1. Parameters Designing of Slide Mode Variable Structure Controller of Bus Voltage of DC Microgrid Based on Proportion Switching Function

    Directory of Open Access Journals (Sweden)

    Sun Zhenchuan

    2017-01-01

    Full Text Available Constant value control of the DC-bus voltage is a essential problem of the control system of the DC microgrids. DC-DC converters are applied in parallel to realize the transform of energy from the distributed generations (DGs to the DC-bus. Droop control methods are applied to the DC-bus voltage while PI controllers are used in controlling the duty ratios of the converters. This method may bring out the slow response speed of the system accompanied by the large ripple of the voltage. The slide mode variable structure control can speed up the response and reduce the ripple of the voltage as well. In the traditional slide mode control based on the proportion switching function, the denominator of the transfer function of the controlled plant is a second-order characteristic polynomial without the constant term. The denominators of the transfer functions of the buck DC-DC converters contain the constant terms. The designing of the parameters of the slide mode control based on the proportion switching function is analyzed based on mathematics deductions. Simulation results show that the selected parameters can not only speed up the response of the system but also greatly reduce the ripple of the voltage.

  2. Uncertainty estimation of non-ideal analog switches using programmable Josephson voltage standards for mutual inductance measurement in the joule balance

    International Nuclear Information System (INIS)

    Wang, Gang; Zhang, Zhonghua; Li, Zhengkun; Xu, Jinxin; You, Qiang

    2016-01-01

    Measurement of the mutual inductance is one of the key techniques in the joule balance to determine the Planck constant h, where a standard-square-wave compensation method was proposed to accurately measure the dc value of the mutual inductance. With this method, analog switches are used to compose an analog-switch signal generator to synthesize the excitation and compensation voltages. However, the accuracy of the compensation voltage is influenced by the non-ideal behaviors of analog-switches. In this paper, the effect from these non-ideal switches is analyzed in detail and evaluated with the equivalent circuits. A programmable Josephson voltage standard (PJVS) is used to generate a reference compensation voltage to measure the time integration of the voltage waveform generated by the analog-switch signal generator. Moreover, the effect is also evaluated experimentally by comparing the difference between the mutual inductance measured with the analog-switch signal generator and the value determined by the PJVS-analog-switch generator alternately in the same mutual inductance measurement system. The result shows that the impact of analog switches is 1.97  ×  10 −7 with an uncertainty of 1.83  ×  10 −7 (k  =  1) and confirms that the analog switch method can be used regularly instead of the PJVS in the mutual inductance measurement for the joule balance experiment. (paper)

  3. Measurement ot the switching over-voltages at the disconnection of the high voltage shunt reactors in the Romanian power system

    Energy Technology Data Exchange (ETDEWEB)

    Stroica, Paul Constantin; Merfu, Ion; Stroica, Mihail; Merfu, Marius; Cojocaru, Florian; Stefan, Dinu; Cojocaru, Mihai

    2010-09-15

    The paper presents the measurements of the switching over-voltages made in the Romanian Power System, at the 400/220/110 kV Urechesti substation at the disconnection of a 400 kV, 100 MVAr shunt reactor type DFAL, Siemens, Germany, in 3 consecutive versions. The first one is for shunt reactor controlled by live-tank oil circuit breaker, the second one is for shunt reactor controlled by SF6 circuit breaker, and the third one is for shunt reactor controlled by SF6 circuit breaker and synchronize device.

  4. Effects of switching frequency and leakage inductance on slow-scale stability in a voltage controlled flyback converter

    International Nuclear Information System (INIS)

    Wang Fa-Qiang; Ma Xi-Kui

    2013-01-01

    The effects of both the switching frequency and the leakage inductance on the slow-scale stability in a voltage controlled flyback converter are investigated in this paper. Firstly, the system description and its mathematical model are presented. Then, the improved averaged model, which covers both the switching frequency and the leakage inductance, is established, and the effects of these two parameters on the slow-scale stability in the system are analyzed. It is found that the occurrence of Hopf bifurcation in the system is the main reason for losing its slow-scale stability and both the switching frequency and the leakage inductance have an important effect on this slow-scale stability. Finally, the effectiveness of the improved averaged model and that of the corresponding theoretical analysis are confirmed by the simulation results and the experimental results. (general)

  5. Irradiation of optically activated SI-GaAs high-voltage switches with low and high energy protons

    CERN Document Server

    Bertolucci, Ennio; Mettivier, G; Russo, P; Bisogni, M G; Bottigli, U; Fantacci, M E; Stefanini, A; Cola, A; Quaranta, F; Vasanelli, L; Stefanini, G

    1999-01-01

    Semi-Insulating Gallium Arsenide (SI-GaAs) devices have been tested for radiation hardness with 3-4 MeV or 24 GeV proton beams. These devices can be operated in dc mode as optically activated electrical switches up to 1 kV. Both single switches (vertical Schottky diodes) and multiple (8) switches (planar devices) have been studied, by analyzing their current-voltage (I-V) reverse characteristics in the dark and under red light illumination, both before and after irradiation. We propose to use them in the system of high-voltage (-600 V) switches for the microstrip gas chambers for the CMS experiment at CERN. Low energy protons (3-4 MeV) were used in order to produce a surface damage below the Schottky contact: their fluence (up to 2.6*10/sup 15/ p/cm/sup 2/) gives a high-dose irradiation. The high energy proton irradiation (energy: 24 GeV, fluence: 1.1*10/sup 14/ p/cm/sup 2/) reproduced a ten years long proton exposure of the devices in CMS experiment conditions. For low energy irradiation, limited changes of ...

  6. Voltage-Balancing Method for Modular Multilevel Converters Switched at Grid Frequency

    DEFF Research Database (Denmark)

    Deng, Fujin; Chen, Zhe

    2015-01-01

    The modular multilevel converter (MMC) becomes attractive for high-voltage and high-power applications due to its high modularity, availability, and power quality. The voltage balance issue of capacitors is very important in the MMC, and the balancing of the capacitor voltage is increasingly...

  7. EBS Radionuclide Transport Abstraction

    International Nuclear Information System (INIS)

    Schreiner, R.

    2001-01-01

    The purpose of this work is to develop the Engineered Barrier System (EBS) radionuclide transport abstraction model, as directed by a written development plan (CRWMS M and O 1999a). This abstraction is the conceptual model that will be used to determine the rate of release of radionuclides from the EBS to the unsaturated zone (UZ) in the total system performance assessment-license application (TSPA-LA). In particular, this model will be used to quantify the time-dependent radionuclide releases from a failed waste package (WP) and their subsequent transport through the EBS to the emplacement drift wall/UZ interface. The development of this conceptual model will allow Performance Assessment Operations (PAO) and its Engineered Barrier Performance Department to provide a more detailed and complete EBS flow and transport abstraction. The results from this conceptual model will allow PA0 to address portions of the key technical issues (KTIs) presented in three NRC Issue Resolution Status Reports (IRSRs): (1) the Evolution of the Near-Field Environment (ENFE), Revision 2 (NRC 1999a), (2) the Container Life and Source Term (CLST), Revision 2 (NRC 1999b), and (3) the Thermal Effects on Flow (TEF), Revision 1 (NRC 1998). The conceptual model for flow and transport in the EBS will be referred to as the ''EBS RT Abstraction'' in this analysis/modeling report (AMR). The scope of this abstraction and report is limited to flow and transport processes. More specifically, this AMR does not discuss elements of the TSPA-SR and TSPA-LA that relate to the EBS but are discussed in other AMRs. These elements include corrosion processes, radionuclide solubility limits, waste form dissolution rates and concentrations of colloidal particles that are generally represented as boundary conditions or input parameters for the EBS RT Abstraction. In effect, this AMR provides the algorithms for transporting radionuclides using the flow geometry and radionuclide concentrations determined by other

  8. Interface Engineering with MoS2 -Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory.

    Science.gov (United States)

    Wang, Xue-Feng; Tian, He; Zhao, Hai-Ming; Zhang, Tian-Yu; Mao, Wei-Quan; Qiao, Yan-Cong; Pang, Yu; Li, Yu-Xing; Yang, Yi; Ren, Tian-Ling

    2018-01-01

    Metal oxide-based resistive random access memory (RRAM) has attracted a lot of attention for its scalability, temperature robustness, and potential to achieve machine learning. However, a thick oxide layer results in relatively high program voltage while a thin one causes large leakage current and a small window. Owing to these fundamental limitations, by optimizing the oxide layer itself a novel interface engineering idea is proposed to reduce the programming voltage, increase the uniformity and on/off ratio. According to this idea, a molybdenum disulfide (MoS 2 )-palladium nanoparticles hybrid structure is used to engineer the oxide/electrode interface of hafnium oxide (HfO x )-based RRAM. Through its interface engineering, the set voltage can be greatly lowered (from -3.5 to -0.8 V) with better uniformity under a relatively thick HfO x layer (≈15 nm), and a 30 times improvement of the memory window can be obtained. Moreover, due to the atomic thickness of MoS 2 film and high transmittance of ITO, the proposed RRAM exhibits high transparency in visible light. As the proposed interface-engineering RRAM exhibits good transparency, low SET voltage, and a large resistive switching window, it has huge potential in data storage in transparent circuits and wearable electronics with relatively low supply voltage. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Effect of voltage sags on digitally controlled line connected switched-mode power supplies

    DEFF Research Database (Denmark)

    Török, Lajos; Munk-Nielsen, Stig

    2012-01-01

    Different voltage disorders like voltage fluctuations, sags, frequency variations may occur in the power supply networks due to different fault conditions. These deviations from normal operation affects in different ways the line connected devices. Standards were developed to protect and ensure...... of voltage sags is analyzed. Fault tolerant control algorithm was designed, implemented and is discussed. The fault conditions and their effects were investigated at different power levels....

  10. EB curable laminating adhesives

    International Nuclear Information System (INIS)

    Matsuyama, Asao; Kobayashi, Masahide; Gotoh, Sakiko

    1992-01-01

    New developed solvent free EB curable laminating adhesives have two liquid components, A with hydroxy and acryloyl group, B with isocyanate and acryloyl group in a molecule. These EB laminating adhesives do not need any aging process, which is a big advantage, and are very suitable for environment, safety, and health because of no heating process and solvent free formulas. And we have made basic research about the relation of peel strength or heat seal strength versus Tg of cured film, elongation at break, elastic modulus, and so on. Basic specifications of the new developed adhesives are shown. (author)

  11. Five-Level Converter with Low Switching Frequency Applied as DC Voltage Supply

    DEFF Research Database (Denmark)

    Rasmussen, Tonny Wederberg

    1999-01-01

    This paper describes the use of a multi-level converter as a DC supply. Equations for the converter will be deduced in the nondissipative case. The equations provide solutions to DC voltage and the angle of converter voltage. In addition the spectrum for the harmonics after the elimination of sel...

  12. New EB curing system for narrow web, using Min-EB

    International Nuclear Information System (INIS)

    Nakamura, Tetsuhisa; Tominaga, Hiroshi; Oizumi, Kei

    2003-01-01

    We, TOYO INK, developed the new equipment of EB curing system for narrow web composed of vacuum tube-type electron beam irradiation apparatus called Min-EB which is specialized with ultra-low voltage, 50-60 KV, and not damaging against the substrate. The new development is very small size, 66 cm width, 64 cm depth, 80 cm height and convenient to install into printing and coating machines. Several tubes, Min-EB, are assembled to be multi-tube module, called MTM, to easily handle. Basically we can change the irradiation width and printing and coating speed by increasing MTM due to the sheet size and printing and coating condition. We got good results, showing high density for the printed film, after used new EB curing system. (author)

  13. Reverse bistable effect in ferroelectric liquid crystal devices with ultra-fast switching at low driving voltage.

    Science.gov (United States)

    Guo, Qi; Zhao, Xiaojin; Zhao, Huijie; Chigrinov, V G

    2015-05-15

    In this Letter, reverse bistable effect with deep-sub-millisecond switching time is first reported in ferroelectric liquid crystal (FLC) devices using a homogeneous photo-alignment technique. It is indicated by our experimental results that both the anchoring energy and the dielectric property of the FLC's alignment layer is critical for the existence of the reverse bistable effect. In addition, with the derived criteria of the reverse bistable effect, we quantitatively analyze the switching dynamics of the reverse bistable FLC and the transition condition between the traditional bistability and our presented reverse bistability. Moreover, the fabricated FLC device exhibits an ultra-fast switching of ∼160  μs and a high contrast ratio of 1000:1, both of which were measured at a low driving voltage of 11 V. The featured deep-sub-millisecond switching time is really advantageous for our presented reverse bistable FLC devices, which enables a significant quality improvement of the existing optical devices, as well as a wide range of new applications in photonics and display areas.

  14. Bias voltage induced resistance switching effect in single-molecule magnets' tunneling junction.

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-12

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be 'read out' by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  15. Bias voltage induced resistance switching effect in single-molecule magnets’ tunneling junction

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-01

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be ‘read out’ by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  16. Computerized precision control of a synchronous high voltage discharge switch for the beam separation system of the LEP e+/e- collider

    International Nuclear Information System (INIS)

    Dieperink, J.H.; Finnigan, A.; Kalbreier, W.; Keizer, R.L.; Laffin, M.; Mertens, V.

    1989-01-01

    Electrostatic separators are used to separate the beams in LEP. The counter-rotating beams are eventually brought into collision in the four low beta insertions, using switches to discharge simultaneously four high voltage (HV) circuits. Each switch consists of four spark gaps mounted in a pressure vessel. A reduction of the gap widths below the self ignition instance by electric motors results in the initiation of the discharges. Synchronization is ensured by the electrical coupling of the electrodes connected to the ground. The design and performance of the computerized precision control of the discharge switch are described. The dynamic characteristics of the prototype switch are also presented. 5 refs., 5 figs

  17. EBS Radionuclide Transport Abstraction

    International Nuclear Information System (INIS)

    J. Prouty

    2006-01-01

    The purpose of this report is to develop and analyze the engineered barrier system (EBS) radionuclide transport abstraction model, consistent with Level I and Level II model validation, as identified in Technical Work Plan for: Near-Field Environment and Transport: Engineered Barrier System: Radionuclide Transport Abstraction Model Report Integration (BSC 2005 [DIRS 173617]). The EBS radionuclide transport abstraction (or EBS RT Abstraction) is the conceptual model used in the total system performance assessment (TSPA) to determine the rate of radionuclide releases from the EBS to the unsaturated zone (UZ). The EBS RT Abstraction conceptual model consists of two main components: a flow model and a transport model. Both models are developed mathematically from first principles in order to show explicitly what assumptions, simplifications, and approximations are incorporated into the models used in the TSPA. The flow model defines the pathways for water flow in the EBS and specifies how the flow rate is computed in each pathway. Input to this model includes the seepage flux into a drift. The seepage flux is potentially split by the drip shield, with some (or all) of the flux being diverted by the drip shield and some passing through breaches in the drip shield that might result from corrosion or seismic damage. The flux through drip shield breaches is potentially split by the waste package, with some (or all) of the flux being diverted by the waste package and some passing through waste package breaches that might result from corrosion or seismic damage. Neither the drip shield nor the waste package survives an igneous intrusion, so the flux splitting submodel is not used in the igneous scenario class. The flow model is validated in an independent model validation technical review. The drip shield and waste package flux splitting algorithms are developed and validated using experimental data. The transport model considers advective transport and diffusive transport

  18. EBS Radionuclide Transport Abstraction

    Energy Technology Data Exchange (ETDEWEB)

    J. Prouty

    2006-07-14

    The purpose of this report is to develop and analyze the engineered barrier system (EBS) radionuclide transport abstraction model, consistent with Level I and Level II model validation, as identified in Technical Work Plan for: Near-Field Environment and Transport: Engineered Barrier System: Radionuclide Transport Abstraction Model Report Integration (BSC 2005 [DIRS 173617]). The EBS radionuclide transport abstraction (or EBS RT Abstraction) is the conceptual model used in the total system performance assessment (TSPA) to determine the rate of radionuclide releases from the EBS to the unsaturated zone (UZ). The EBS RT Abstraction conceptual model consists of two main components: a flow model and a transport model. Both models are developed mathematically from first principles in order to show explicitly what assumptions, simplifications, and approximations are incorporated into the models used in the TSPA. The flow model defines the pathways for water flow in the EBS and specifies how the flow rate is computed in each pathway. Input to this model includes the seepage flux into a drift. The seepage flux is potentially split by the drip shield, with some (or all) of the flux being diverted by the drip shield and some passing through breaches in the drip shield that might result from corrosion or seismic damage. The flux through drip shield breaches is potentially split by the waste package, with some (or all) of the flux being diverted by the waste package and some passing through waste package breaches that might result from corrosion or seismic damage. Neither the drip shield nor the waste package survives an igneous intrusion, so the flux splitting submodel is not used in the igneous scenario class. The flow model is validated in an independent model validation technical review. The drip shield and waste package flux splitting algorithms are developed and validated using experimental data. The transport model considers advective transport and diffusive transport

  19. Fundamental studies on the switching in liquid nitrogen environment using vacuum switches for application in future high-temperature superconducting medium-voltage power grids

    International Nuclear Information System (INIS)

    Golde, Karsten

    2016-01-01

    By means of superconducting equipment it is possible to reduce the transmission losses in distribution networks while increasing the transmission capacity. As a result even saving a superimposed voltage level would be possible, which can put higher investment costs compared to conventional equipment into perspective. For operation of superconducting systems it is necessary to integrate all equipment in the cooling circuit. This also includes switchgears. Due to cooling with liquid nitrogen, however, only vacuum switching technology comes into question. Thus, the suitability of vacuum switches is investigated in this work. For this purpose the mechanics of the interrupters is considered first. Material investigations and switching experiments at ambient temperature and in liquid nitrogen supply information on potential issues. For this purpose, a special pneumatic construction is designed, which allows tens of thousands of switching cycles. Furthermore, the electrical resistance of the interrupters is considered. Since the contact system consists almost exclusively of copper, a remaining residual resistance and appropriate thermal losses must be considered. Since they have to be cooled back, an appropriate evaluation is given taking environmental parameters into account. The dielectric strength of vacuum interrupters is considered both at ambient temperature as well as directly in liquid nitrogen. For this purpose different contact distances are set at different interrupter types. A distinction is made between internal and external dielectric strength. Conditioning and deconditioning effects are minimized by an appropriate choice of the test circuit. The current chopping and resulting overvoltages are considered to be one of the few drawbacks of vacuum switching technology. Using a practical test circuit the height of chopping current is determined and compared for different temperatures. Due to strong scattering the evaluation is done using statistical methods. At

  20. Investigating Enhancement Mode Gallium Nitride Power FETs in High Voltage, High Frequency Soft Switching Converters

    DEFF Research Database (Denmark)

    Nour, Yasser; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    An increased attention has been detected to develop smaller and lighter high voltage power converters in the range of 50V to 400V domain. The main applications for these converters are mainly focused for Power over Ethernet (PoE), LED lighting and AC adapters. This work will discuss a study...

  1. Switch-mode High Voltage Drivers for Dielectric Electro Active Polymer (DEAP) Incremental Actuators

    DEFF Research Database (Denmark)

    Thummala, Prasanth

    voltage DC-DC converters for driving the DEAP based incremental actuators. The DEAP incremental actuator technology has the potential to be used in various industries, e.g., automotive, space and medicine. The DEAP incremental actuator consists of three electrically isolated and mechanically connected...

  2. High voltage, fast turn-on and turn-off switch: Final report for period September 2, 1998 - March 17, 1999

    International Nuclear Information System (INIS)

    Jochen Schein; Xiaoxi Xu; Niansheng Qi; Steven Gensler; Rahul Prasad; Mahadevan Krishnan

    1999-01-01

    The aspect to be investigated during this contract was an electron-beam triggered diamond switch to be used in high power modulators. Today's high power modulators require higher voltage switches than those developed to date. Specifically, the proposed 1 TeV linear collider, the NLC/ILC at the Stanford Linear Accelerator Center (SLAC), consists of two linacs with 6600 X-Band klystrons powered by 3300 high power modulators. These modulators require switches capable of handling 80 kV, switching 8 kA with pulse durations ranging from 2 ps (linac) to 6 micros (pre-linac) with switching times <50 ns at pulse repetition frequencies up to 180 Hz. In addition the large number of switches and other components dictate a pulse to pulse jitter of <10 ns and a mean time between failures of at least 50,000 hours. The present approach is to use hydrogen filled thyratrons. While these switches meet the voltage and conduction current requirements they lack the required reliability (pulse to pulse jitter) and lifetime. Research to improve these aspects is in progress. A solid state switch inherently offers the required reliability and lifetime. However, Si-based switches developed to date are limited to about 5 kV and several must be stacked in series to deliver the required voltage. This further increases the already large parts count and compromises reliability and lifetime. A monolithic, solid state switch capable of meeting all the requirements for X-Band modulators would be ideal. DOE selected this proposal for a Phase 1 SBIR award and this final report describes the progress made during the contract

  3. High voltage, fast turn-on and turn-off switch: Final report for period September 2, 1998 - March 17, 1999

    Energy Technology Data Exchange (ETDEWEB)

    Jochen Schein; Xiaoxi Xu; Niansheng Qi; Steven Gensler; Rahul Prasad; Mahadevan Krishnan

    1999-04-10

    The aspect to be investigated during this contract was an electron-beam triggered diamond switch to be used in high power modulators. Today's high power modulators require higher voltage switches than those developed to date. Specifically, the proposed 1 TeV linear collider, the NLC/ILC at the Stanford Linear Accelerator Center (SLAC), consists of two linacs with 6600 X-Band klystrons powered by 3300 high power modulators. These modulators require switches capable of handling 80 kV, switching 8 kA with pulse durations ranging from 2 ps (linac) to 6 {micro}s (pre-linac) with switching times <50 ns at pulse repetition frequencies up to 180 Hz. In addition the large number of switches and other components dictate a pulse to pulse jitter of <10 ns and a mean time between failures of at least 50,000 hours. The present approach is to use hydrogen filled thyratrons. While these switches meet the voltage and conduction current requirements they lack the required reliability (pulse to pulse jitter) and lifetime. Research to improve these aspects is in progress. A solid state switch inherently offers the required reliability and lifetime. However, Si-based switches developed to date are limited to about 5 kV and several must be stacked in series to deliver the required voltage. This further increases the already large parts count and compromises reliability and lifetime. A monolithic, solid state switch capable of meeting all the requirements for X-Band modulators would be ideal. DOE selected this proposal for a Phase 1 SBIR award and this final report describes the progress made during the contract.

  4. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    Science.gov (United States)

    Khan, Asif; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-06-01

    A spintronic device, called the "strain assisted spin transfer torque (STT) random access memory (RAM)," is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  5. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    International Nuclear Information System (INIS)

    Khan, Asif; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-01-01

    A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  6. 130 kV 130 A High voltage switching mode power supply for neutral beam plasma heating: design issues

    International Nuclear Information System (INIS)

    Ganuza, D.; Del Rio, J.M.; Garcia, I.; Garcia, F.; Garcia de Madinabeitia, P.; Perez, A.; Zabaleta, J.R.

    2003-01-01

    The company JEMA has designed and manufactured two High Voltage Switching Mode Power Supplies (HVSMPS), rated at 130 kV dc and 130 A, each of which will feed the accelerator grids of two Positive Ion Neutral Injector (PINI) loads, to be installed at the Joint European Torus (EFDA-JET facility located at Culham, UK). The solution designed by JEMA includes two matching transformers which adapt the 36 kV of the JET AC power distribution network to the required 670 V at the secondary side. Additionally, such transformers provide a 30 deg.phase shift which is required by a 30000 A 12 pulse thyristor rectifier. The obtained and stabilised 650 V feed 120 IGBT invertors, which operate at 2778 Hz with modulated square waveform. Each invertor feeds a High Insulation High Frequency Transformer. The 120 transformers corresponding to one power supply are arranged in three oil filled tanks and provide the main insulation from the low voltage to the high voltage side. The square waveform obtained at the secondary of each transformer is rectified by means of a diode bridge. The connection in series of the 120 diode bridges provides the required 130 kV d.c. at the output. In order to protect the load, a redundant solid state crowbar has been designed. Such short circuiting device is composed of 26 Light Triggered Thyristors (LTTs), connected in series. Electrical simulations have been carried out in order to ensure that the system complies with the requirements of high accuracy and adequate protection of the load. The critical design of the High Voltage-High Frequency Transformers has also required electrostatic simulations of the electric field distribution

  7. EBS Radionuclide Transport Abstraction

    Energy Technology Data Exchange (ETDEWEB)

    J.D. Schreiber

    2005-08-25

    The purpose of this report is to develop and analyze the engineered barrier system (EBS) radionuclide transport abstraction model, consistent with Level I and Level II model validation, as identified in ''Technical Work Plan for: Near-Field Environment and Transport: Engineered Barrier System: Radionuclide Transport Abstraction Model Report Integration'' (BSC 2005 [DIRS 173617]). The EBS radionuclide transport abstraction (or EBS RT Abstraction) is the conceptual model used in the total system performance assessment for the license application (TSPA-LA) to determine the rate of radionuclide releases from the EBS to the unsaturated zone (UZ). The EBS RT Abstraction conceptual model consists of two main components: a flow model and a transport model. Both models are developed mathematically from first principles in order to show explicitly what assumptions, simplifications, and approximations are incorporated into the models used in the TSPA-LA. The flow model defines the pathways for water flow in the EBS and specifies how the flow rate is computed in each pathway. Input to this model includes the seepage flux into a drift. The seepage flux is potentially split by the drip shield, with some (or all) of the flux being diverted by the drip shield and some passing through breaches in the drip shield that might result from corrosion or seismic damage. The flux through drip shield breaches is potentially split by the waste package, with some (or all) of the flux being diverted by the waste package and some passing through waste package breaches that might result from corrosion or seismic damage. Neither the drip shield nor the waste package survives an igneous intrusion, so the flux splitting submodel is not used in the igneous scenario class. The flow model is validated in an independent model validation technical review. The drip shield and waste package flux splitting algorithms are developed and validated using experimental data. The transport

  8. EBS Radionuclide Transport Abstraction

    International Nuclear Information System (INIS)

    J.D. Schreiber

    2005-01-01

    The purpose of this report is to develop and analyze the engineered barrier system (EBS) radionuclide transport abstraction model, consistent with Level I and Level II model validation, as identified in ''Technical Work Plan for: Near-Field Environment and Transport: Engineered Barrier System: Radionuclide Transport Abstraction Model Report Integration'' (BSC 2005 [DIRS 173617]). The EBS radionuclide transport abstraction (or EBS RT Abstraction) is the conceptual model used in the total system performance assessment for the license application (TSPA-LA) to determine the rate of radionuclide releases from the EBS to the unsaturated zone (UZ). The EBS RT Abstraction conceptual model consists of two main components: a flow model and a transport model. Both models are developed mathematically from first principles in order to show explicitly what assumptions, simplifications, and approximations are incorporated into the models used in the TSPA-LA. The flow model defines the pathways for water flow in the EBS and specifies how the flow rate is computed in each pathway. Input to this model includes the seepage flux into a drift. The seepage flux is potentially split by the drip shield, with some (or all) of the flux being diverted by the drip shield and some passing through breaches in the drip shield that might result from corrosion or seismic damage. The flux through drip shield breaches is potentially split by the waste package, with some (or all) of the flux being diverted by the waste package and some passing through waste package breaches that might result from corrosion or seismic damage. Neither the drip shield nor the waste package survives an igneous intrusion, so the flux splitting submodel is not used in the igneous scenario class. The flow model is validated in an independent model validation technical review. The drip shield and waste package flux splitting algorithms are developed and validated using experimental data. The transport model considers

  9. GENETIC ALGORITHM BASED SOLUTION IN PWM CONVERTER SWITCHING FOR VOLTAGE SOURCE INVERTER FEEDING AN INDUCTION MOTOR DRIVE

    Directory of Open Access Journals (Sweden)

    V. Jegathesan

    2017-11-01

    Full Text Available This paper presents an efficient and reliable Genetic Algorithm based solution for Selective Harmonic Elimination (SHE switching pattern. This method eliminates considerable amount of lower order line voltage harmonics in Pulse Width Modulation (PWM inverter. Determination of pulse pattern for the elimination of some lower order harmonics of a PWM inverter necessitates solving a system of nonlinear transcendental equations. Genetic Algorithm is used to solve nonlinear transcendental equations for PWM-SHE. Many methods are available to eliminate the higher order harmonics and it can be easily removed. But the greatest challenge is to eliminate the lower order harmonics and this is successfully achieved using Genetic Algorithm without using Dual transformer. Simulations using MATLABTM and Powersim with experimental results are carried out to validate the solution. The experimental results show that the harmonics up to 13th were totally eliminated.

  10. Elimination of image flicker in a fringe-field switching liquid crystal display by applying a bipolar voltage wave.

    Science.gov (United States)

    Oh, Seung-Won; Park, Jun-Hee; Lee, Ji-Hoon; Yoon, Tae-Hoon

    2015-09-07

    Recently, low-frequency driving of liquid crystal display (LCD) panels to minimize power consumption has drawn much attention. In the case in which an LCD panel is driven by a fringe-field at a low frequency, the image flickering phenomenon occurs when the sign of the applied electric field is reversed. We investigated image flickering induced by the flexoelectric effect in a fringe-field switching (FFS) liquid crystal cell in terms of the transmittance difference between frames and the ripple phenomenon. Experimental results show that image flicker due to transmittance difference can be eliminated completely and that the ripple phenomena can be reduced significantly by applying a bipolar voltage wave to the FFS cell.

  11. Investigation of thick grid plasma switches for thermionic system output voltage

    International Nuclear Information System (INIS)

    Alekseev, N.I.; Kaplan, V.B.; Martsinovski, A.M.

    1992-01-01

    Plasma switches (Cs and Cs-Ba tacitrons PS) with thick grid have grid with thickness more than mesh aperture size. These grids have some advantages as compared with small-scale/1.2/ones. For instance, much more electrical strength. This paper contains the thick-grid investigation results: the grid controls efficiency, the plasma parameters, probe researches of these parameters at conductive state and their variety during the process of quenching. The results showed the thick-grid PS plasma differed from the thin-grid PS significantly at the stationary state as well as by quenching dynamic features

  12. Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments

    International Nuclear Information System (INIS)

    Sokolov, A; Sabirianov, I; Sabirianov, R; Doudin, B

    2009-01-01

    Large hysteretic resistance changes are reported on sub-100 nm diameter metallic nanowires including thin dielectric junctions. Bi-stable 50% switching in a double junction geometry is modeled in terms of an occupation-driven metal-insulator transition in one of the two junctions, using the generalized Poisson expressions of Oka and Nagaosa (2005 Phys. Rev. Lett. 95 266403). It illustrates how a band bending scheme can be generalized for strongly correlated electron systems. The magnetic constituents of the nanowires provide a magnetoresistive signature of the two resistance states, confirming our model and enabling a four states device application.

  13. High voltage photo-switch package module having encapsulation with profiled metallized concavities

    Science.gov (United States)

    Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen A

    2015-05-05

    A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces metalized with first metallic layers formed thereon, and encapsulated with a dielectric encapsulation material such as for example epoxy. The first metallic layers are exposed through the encapsulation via encapsulation concavities which have a known contour profile, such as a Rogowski edge profile. Second metallic layers are then formed to line the concavities and come in contact with the first metal layer, to form profiled and metalized encapsulation concavities which mitigate enhancement points at the edges of electrodes matingly seated in the concavities. One or more optical waveguides may also be bonded to the substrate for coupling light into the photo-conductive wafer, with the encapsulation also encapsulating the waveguides.

  14. Zero-Voltage Switching PWM Strategy Based Capacitor Current-Balancing Control for Half-Bridge Three-Level DC/DC Converter

    DEFF Research Database (Denmark)

    Liu, Dong; Deng, Fujin; Zhang, Qi

    2018-01-01

    The current imbalance among the two input capacitors is one of the important issues of the half-bridge threelevel (HBTL) DC/DC converter, which would affect system performance and reliability. In this paper, a zero-voltage switching (ZVS) pulse-wide modulation (PWM) strategy including two operation...

  15. Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

    Science.gov (United States)

    Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli

    2015-01-01

    We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

  16. Thermal re-ignition processes of switching arcs with various gas-blast using voltage application highly controlled by powersemiconductors

    Science.gov (United States)

    Nakano, Tomoyuki; Tanaka, Yasunori; Murai, K.; Uesugi, Y.; Ishijima, T.; Tomita, K.; Suzuki, K.; Shinkai, T.

    2018-05-01

    This paper focuses on a fundamental experimental approach to thermal arc re-ignition processes in a variety of gas flows in a nozzle. Using power semiconductor switches in the experimental system, the arc current and the voltage applied to the arc were controlled with precise timing. With this system, residual arcs were created in decaying phase under free recovery conditions; arc re-ignition was then intentionally instigated by application of artificial voltage—i.e. quasi-transient recovery voltage—to study the arc behaviour in both decaying and re-ignition phases. In this study, SF6, CO2, N2, O2, air and Ar arcs were intentionally re-ignited by quasi-TRV application at 20 μs delay time from initiation of free recovery condition. Through these experiments, the electron density at the nozzle throat was measured using a laser Thomson scattering method together with high speed video camera observation during the re-ignition process. Temporal variations in the electron density from the arc decaying to re-ignition phases were successfully obtained for each gas-blast arc at the nozzle throat. In addition, initial dielectric recovery properties of SF6, CO2, air and Ar arcs were measured under the same conditions. These data will be useful in the fundamental elucidation of thermal arc re-ignition processes.

  17. Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

    Science.gov (United States)

    Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

    2017-07-01

    Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

  18. Proposal for a dual-gate spin field effect transistor: A device with very small switching voltage and a large ON to OFF conductance ratio

    Science.gov (United States)

    Wan, J.; Cahay, M.; Bandyopadhyay, S.

    2008-06-01

    We propose a new dual gate spin field effect transistor (SpinFET) consisting of a quasi one-dimensional semiconductor channel sandwiched between two half-metallic contacts. The gate voltage aligns and de-aligns the incident electron energy with Ramsauer resonance levels in the channel, thereby modulating the source-to-drain conductance. The device can be switched from ON to OFF with a few mV change in the gate voltage, resulting in exceedingly low dynamic power dissipation during switching. The conductance ON/OFF ratio stays fairly large ( ∼60) up to a temperature of 10 K. This conductance ratio is comparable to that achievable with carbon nanotube transistors.

  19. UV/EB curable psa's

    International Nuclear Information System (INIS)

    Glotfelter, C.A.

    1995-01-01

    The author describe both water-based and 100% solids UV/EB curable PSA's (Pressure Sensitive Adhesives) and their properties. A new acrylate monomer, ethoxylated nonyl phenol acrylate, has great utility in the formulation of water-based PSA's

  20. Application of EB in Japan

    Energy Technology Data Exchange (ETDEWEB)

    Sunaga, Hiromi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    2003-02-01

    Radiation processing using electron beam (EB) facilities other than gamma-ray facilities in Japan is introduced. After briefly presented the features of EB compared with gamma ray, present status of EB application is described. Polymerized materials for use of wire, cable, radial tire, heat shrinkable tube, foam polyethylene, PTFE, battery separator, and adsorbent material are known to be resulting from cross-linking, decomposition, and graft polymerization reactions. Environmental preservation includes electron flue gas treatment in the coal- or oil-fired power plants, research for volatile organic compounds (VOC) and dioxins, as well as wastewater and sludge treatment. Finally activity of JAERI in the related fields is overviewed with the authors prospects for utilization of low energy EB with low cost for surface treatment and functional materials. (S. Ohno)

  1. Application of EB in Japan

    International Nuclear Information System (INIS)

    Sunaga, Hiromi

    2003-01-01

    Radiation processing using electron beam (EB) facilities other than gamma-ray facilities in Japan is introduced. After briefly presented the features of EB compared with gamma ray, present status of EB application is described. Polymerized materials for use of wire, cable, radial tire, heat shrinkable tube, foam polyethylene, PTFE, battery separator, and adsorbent material are known to be resulting from cross-linking, decomposition, and graft polymerization reactions. Environmental preservation includes electron flue gas treatment in the coal- or oil-fired power plants, research for volatile organic compounds (VOC) and dioxins, as well as wastewater and sludge treatment. Finally activity of JAERI in the related fields is overviewed with the authors prospects for utilization of low energy EB with low cost for surface treatment and functional materials. (S. Ohno)

  2. Avalanche mode of high-voltage overloaded p{sup +}–i–n{sup +} diode switching to the conductive state by pulsed illumination

    Energy Technology Data Exchange (ETDEWEB)

    Kyuregyan, A. S., E-mail: ask@vei.ru [Lenin All-Russia Electrical Engineering Institute (Russian Federation)

    2015-07-15

    A simple analytical theory of the picosecond switching of high-voltage overloaded p{sup +}–i–n{sup +} photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs.

  3. Avalanche mode of high-voltage overloaded p+–i–n+ diode switching to the conductive state by pulsed illumination

    International Nuclear Information System (INIS)

    Kyuregyan, A. S.

    2015-01-01

    A simple analytical theory of the picosecond switching of high-voltage overloaded p + –i–n + photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs

  4. Soft-Switched Dual-Input DC-DC Converter Combining a Boost-Half-Bridge Cell and a Voltage-Fed Full-Bridge Cell

    DEFF Research Database (Denmark)

    Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.

    2013-01-01

    This paper presents a new zero-voltage-switching (ZVS) isolated dc-dc converter which combines a boost halfbridge (BHB) cell and a full-bridge (FB) cell, so that two different type of power sources, i.e. both current-fed and voltage-fed, can be coupled effectively by the proposed converter...... for various applications, such as fuel cell and super-capacitor hybrid energy system. By fully using two high frequency transformers and a shared leg of switches, number of the power devices and associated gate driver circuits can be reduced. With phase-shift control, the converter can achieve ZVS turn......-on of active switches and zero-current switching (ZCS) turn-off of diodes. In this paper, derivation, analysis and design of the proposed converter are presented. Finally, a 25~50 V input, 300~400 V output prototype with a 600 W nominal power rating is built up and tested to demonstrate the effectiveness...

  5. Isolated DC-DC Converter for Bidirectional Power Flow Controlling with Soft-Switching Feature and High Step-Up/Down Voltage Conversion

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2017-03-01

    Full Text Available In this paper, a novel isolated bidirectional DC-DC converter is proposed, which is able to accomplish high step-up/down voltage conversion. Therefore, it is suitable for hybrid electric vehicle, fuel cell vehicle, energy backup system, and grid-system applications. The proposed converter incorporates a coupled inductor to behave forward-and-flyback energy conversion for high voltage ratio and provide galvanic isolation. The energy stored in the leakage inductor of the coupled inductor can be recycled without the use of additional snubber mechanism or clamped circuit. No matter in step-up or step-down mode, all power switches can operate with soft switching. Moreover, there is a inherit feature that metal–oxide–semiconductor field-effect transistors (MOSFETs with smaller on-state resistance can be adopted because of lower voltage endurance at primary side. Operation principle, voltage ratio derivation, and inductor design are thoroughly described in this paper. In addition, a 1-kW prototype is implemented to validate the feasibility and correctness of the converter. Experimental results indicate that the peak efficiencies in step-up and step-down modes can be up to 95.4% and 93.6%, respectively.

  6. Voltage-controlled low-energy switching of nanomagnets through Ruderman-Kittel-Kasuya-Yosida interactions for magnetoelectric device applications

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Bahniman, E-mail: bghosh@utexas.edu; Dey, Rik; Register, Leonard F.; Banerjee, Sanjay K. [Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Road, Bldg. 160, Austin, Texas 78758 (United States)

    2016-07-21

    In this article, we consider through simulation low-energy switching of nanomagnets via electrostatically gated inter-magnet Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions on the surface of three-dimensional topological insulators, for possible memory and nonvolatile logic applications. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Potential applications to both memory and nonvolatile logic are illustrated. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets, but the approach also appears compatible with the use of antiferromagnets which may allow for faster switching.

  7. Voltage-controlled low-energy switching of nanomagnets through Ruderman-Kittel-Kasuya-Yosida interactions for magnetoelectric device applications

    International Nuclear Information System (INIS)

    Ghosh, Bahniman; Dey, Rik; Register, Leonard F.; Banerjee, Sanjay K.

    2016-01-01

    In this article, we consider through simulation low-energy switching of nanomagnets via electrostatically gated inter-magnet Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions on the surface of three-dimensional topological insulators, for possible memory and nonvolatile logic applications. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Potential applications to both memory and nonvolatile logic are illustrated. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets, but the approach also appears compatible with the use of antiferromagnets which may allow for faster switching.

  8. Effect of current compliance and voltage sweep rate on the resistive switching of HfO2/ITO/Invar structure as measured by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Wu, You-Lin; Liao, Chun-Wei; Ling, Jing-Jenn

    2014-01-01

    The electrical characterization of HfO 2 /ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO 2 surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO 2 /ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.

  9. Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

    Science.gov (United States)

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

    2014-08-04

    The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

  10. 130 kV 130 A high voltage switching mode power supply for neutral beam injectors-Control issues and algorithms

    International Nuclear Information System (INIS)

    Ganuza, D.; Garcia, F.; Zulaika, M.; Perez, A.; Jones, T.T.C.

    2005-01-01

    The company JEMA has delivered to the Joint European Torus (JET facility in Culham) two high voltage switching mode power supplies (HVSMPS) each rated 130 kVdc and 130 A. One HVSMPS feeds the grids of two PINI loads. This paper describes the main control issues and the algorithms developed for the project. The most demanding requirements from the control point of view is an absolute accuracy of ±1300 V and the possibility of performing up to 255 re-applications of the high voltage during a 20 s pulse. Keeping the output voltage ripple to the specified tolerance has been a major achievement of the control system. Since the output stage is formed of several modules (120) connected in series, their stray capacitance to ground significantly influences the individual contribution of each single module to the global output voltage. Two complementary techniques have been used to balance the effects of the stray capacities. The fast re-applications requirement has a significant impact on the intermediate dc link. This section is composed of a capacity of 0.83 F, which feeds the 120 invertor modules. The dc link is fed by a 12 pulse SCR rectifier, whose matching transformers are connected to the 36 kV grid. Every re-application and every voltage shutdown supposes a quasi-instantaneous power step of 17 MW. Fast open loop algorithms have been implemented in order to keep the dc link voltage within acceptable margins. Moreover, the HVSMPS output characteristics have to be maintained during the rapid and important voltage fluctuations of the 36 kV mains (28-37 kV). The general control system is based on a Simatic S7 PLC, and a SCADA user interface. Up to 1000 signals are acquired. The control system has shown to be also a useful tool to allow for a rapid and accurate identification of faults and their origin

  11. Solid-state Marx based two-switch voltage modulator for the On-Line Isotope Mass Separator accelerator at the European Organization for Nuclear Research.

    Science.gov (United States)

    Redondo, L M; Silva, J Fernando; Canacsinh, H; Ferrão, N; Mendes, C; Soares, R; Schipper, J; Fowler, A

    2010-07-01

    A new circuit topology is proposed to replace the actual pulse transformer and thyratron based resonant modulator that supplies the 60 kV target potential for the ion acceleration of the On-Line Isotope Mass Separator accelerator, the stability of which is critical for the mass resolution downstream separator, at the European Organization for Nuclear Research. The improved modulator uses two solid-state switches working together, each one based on the Marx generator concept, operating as series and parallel switches, reducing the stress on the series stacked semiconductors, and also as auxiliary pulse generator in order to fulfill the target requirements. Preliminary results of a 10 kV prototype, using 1200 V insulated gate bipolar transistors and capacitors in the solid-state Marx circuits, ten stages each, with an electrical equivalent circuit of the target, are presented, demonstrating both the improved voltage stability and pulse flexibility potential wanted for this new modulator.

  12. Switched-capacitor multiply-by-two amplifier with reduced capacitor mismatches sensitivity and full swing sample signal common-mode voltage

    International Nuclear Information System (INIS)

    Xu Xinnan; Yao Suying; Xu Jiangtao; Nie Kaiming

    2012-01-01

    A switched-capacitor amplifier with an accurate gain of two that is insensitive to component mismatch is proposed. This structure is based on associating two sets of two capacitors in cross series during the amplification phase. This circuit permits the common-mode voltage of the sample signal to reach full swing. Using the charge-complement technique, the proposed amplifier can reduce the impact of parasitic capacitors on the gain accuracy effectively. Simulation results show that as sample signal common-mode voltage changes, the difference between the minimum and maximum gain error is less than 0.03%. When the capacitor mismatch is increased from 0 to 0.2%, the gain error is deteriorated by 0.00015%. In all simulations, the gain of amplifier is 69 dB. (semiconductor integrated circuits)

  13. Reproducible low-voltage resistive switching in a low-initial-resistance Pr0.7Ca0.3MnO3 junction

    International Nuclear Information System (INIS)

    Li Songlin; Gang Jianlei; Li Jie; Chu Haifeng; Zheng Dongning

    2008-01-01

    Current-voltage (I-V) characteristics are investigated in a low-initial-resistance Ag/Pr 0.7 Ca 0.3 MnO 3 /Pt sandwich structure. It is found that the junction can show stable low and high resistance states in ±0.3 V voltage sweeping cycles. The set and reset voltage values are, respectively, +0.1 V and -0.2 V, which are very low as compared with those reported previously. Furthermore, the I-V curves in both resistance states exhibit rather linear behaviour, without any signature of metal/insulator interface effects. This implies that the Schottky interface mechanism might not be an indispensable factor for the colossal electroresistance effect. The origin of low switching voltages is attributed to the reduced effective distance for electric field action due to the sufficient oxygen content of the PCMO layer. The underlying physics is discussed in terms of the filament network model together with the field-induced oxygen vacancy motion model

  14. Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

    Science.gov (United States)

    Tezuka, N.; Oikawa, S.; Matsuura, M.; Sugimoto, S.; Nishimura, K.; Irisawa, T.; Nagamine, Y.; Tsunekawa, K.

    2018-05-01

    The authors investigated the voltage control of a magnetic anisotropy field for perpendicular-magnetic tunnel junctions (p-MTJs) with low and high resistance-area (RA) products and for synthetic antiferromagnetic free and pinned layers. It was found that the sample with low RA products was more sensitive to the applied bias voltage than the sample with high RA products. The bias voltage effect was less pronounced for our sample with the synthetic antiferromagnetic layer for high RA products compared to the MTJs with single free and pinned layers.

  15. Recent status of EB applications in China

    International Nuclear Information System (INIS)

    Wang Zhiguang; Zhan Wenlong

    2004-01-01

    The advantages of energetic electron beam (EB) made it an attractive method for radiation processing of materials. In the present paper, the recent status of R and D of EB applications in China has demonstrated briefly. (author)

  16. Pseudospark switches

    International Nuclear Information System (INIS)

    Billault, P.; Riege, H.; Gulik, M. van; Boggasch, E.; Frank, K.

    1987-01-01

    The pseudospark discharge is bound to a geometrical structure which is particularly well suited for switching high currents and voltages at high power levels. This type of discharge offers the potential for improvement in essentially all areas of switching operation: peak current and current density, current rise, stand-off voltage, reverse current capability, cathode life, and forward drop. The first pseudospark switch was built at CERN at 1981. Since then, the basic switching characteristics of pseudospark chambers have been studied in detail. The main feature of a pseudospark switch is the confinement of the discharge plasma to the device axis. The current transition to the hollow electrodes is spread over a rather large surface area. Another essential feature is the easy and precise triggering of the pseudospark switch from the interior of the hollow electrodes, relatively far from the main discharge gap. Nanosecond delay and jitter values can be achieved with trigger energies of less than 0.1 mJ, although cathode heating is not required. Pseudospark gaps may cover a wide range of high-voltage, high-current, and high-pulse-power switching at repetition rates of many kilohertz. This report reviews the basic researh on pseudospark switches which has been going on at CERN. So far, applications have been developed in the range of thyratron-like medium-power switches at typically 20 to 40 kV and 0.5 to 10 kA. High-current pseudospark switches have been built for a high-power 20 kJ pulse generator which is being used for long-term tests of plasma lenses developed for the future CERN Antiproton Collector (ACOL). The high-current switches have operated for several hundred thousand shots, with 20 to 50 ns jitter at 16 kV charging voltage and more than 100 kA peak current amplitude. (orig.)

  17. Hybrid switch for resonant power converters

    Science.gov (United States)

    Lai, Jih-Sheng; Yu, Wensong

    2014-09-09

    A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

  18. Design and implementation of a bidirectional current-controlled voltage-regulated DC-DC switched-mode converter

    CSIR Research Space (South Africa)

    Coetzer, A

    2016-01-01

    Full Text Available The design and implementation of a bidirectional current-controlled voltage-regulated DC-DC converter is presented. The converter is required to connect a battery of electrochemical cells (the battery) to an asynchronous motor-drive unit via a...

  19. EB1 and EB3 promote cilia biogenesis by several centrosome-related mechanisms

    DEFF Research Database (Denmark)

    Schrøder, Jacob M; Larsen, Jesper; Komarova, Yulia

    2011-01-01

    surrounded by vesicles. Further, GST pull-down assays, mass spectrometry and immunoprecipitation indicated that EB1 and EB3 interact with proteins implicated in MT minus-end anchoring or vesicular trafficking to the cilia base, suggesting that EB1 and EB3 promote ciliogenesis by facilitating such trafficking...

  20. Current state of low energy EB devices and its application technology

    International Nuclear Information System (INIS)

    Kinoshita, Shinobu

    2000-01-01

    This paper introduced the current state of low energy type EB (electron beam) devices with an acceleration voltage of 300 kV or below and specific application examples. As for EB devices, it introduced the ultra-compact new EB device (microbeam LV), experimental devices, and the pilot/production devices which have been recently developed by the manufacturer to which the author belongs. As the applications of low energy EB devices, it specifically introduced curing, graft polymerization, crosslinking, and sterilization/disinfection with soft electrons: (1) examples of EB curing; antistatic agents in antibacterial/antifungal property imparting processing, hard coat, printing and topcoat, high gloss/pattern transfer processing, and metal vapor deposition film, (2) example of graft polymerization; barrier imparting films, and (3) examples of crosslinking; shrinking films/tubes and foamed sheets. (A.O.)

  1. Dual-Input Soft-Switched DC-DC Converter with Isolated Current-Fed Half-Bridge and Voltage-Fed Full-Bridge for Fuel Cell or Photovoltaic Systems

    DEFF Research Database (Denmark)

    Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.

    2013-01-01

    integrate a current-fed boost half-bridge (BHB) and a full-bridge (FB) into one equivalent circuit configuration which has dual-input ability and additionally it can reduce the number of the power devices. With the phase-shift control, it can achieve zero-voltage switching turn-on of active switches...... power rating are built up and tested to demonstrate the effectiveness of the proposed converter topology....

  2. A High Resolution Switched Capacitor 1bit Sigma-Delta Modulator for Low-Voltage/Low-Power Applications

    DEFF Research Database (Denmark)

    Furst, Claus Efdmann

    1996-01-01

    A high resolution 1bit Sigma-Delta modulator for low power/low voltage applications is presented. The modulator operates at a supply of 1-1.5V, the current drain is 0.1mA. The maximum resolution is 87dB equivalent to 14 bits of resolution. This is achieved with a signal-band of 5kHz, over-samplin...

  3. Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

    Science.gov (United States)

    Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

    2017-02-09

    Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

  4. Experimental investigation on the development characteristics of initial electrons in a gas pressurized closing switch under DC voltage

    Science.gov (United States)

    Rongxiao, ZHAI; Mengtong, QIU; Weixi, LUO; Peitian, CONG; Tao, HUANG; Jiahui, YIN; Tianyang, ZHANG

    2018-04-01

    As one of the most important elements in linear transformer driver (LTD) based systems, the gas pressurized closing switches are required to operate with a very low prefire probability during the DC-charging process to ensure reliable operation and stable output of the whole pulsed power system. The most direct and effective way to control the prefire probability is to select a suitable working coefficient. The study of the development characteristics of the initially generated electrons is useful for optimizing the working coefficient and improving the prefire characteristic of the switches. In this paper an ultraviolet pulsed laser is used to generate initial electrons inside the gap volume. A current measuring system is used to measure the time-dependent current generated by the growth of the initial electrons so as to study the development characteristics of the electrons under different working coefficients. Experimental results show that the development characteristics of the initial electrons are influenced obviously by the working coefficient. With the increase of the working coefficient, the development degree of the electrons increases consequently. At the same times, there is a threshold of working coefficient which produces the effect of ionization on electrons. The range of the threshold has a slow growth but remains close to 65% with the gas pressure increase. When the working coefficient increases further, γ processes are starting to be generated inside the gap volume. In addition, an optimal working coefficient beneficial for improving the prefire characteristic is indicated and further tested.

  5. An Original Transformer and Switched-Capacitor (T & SC-Based Extension for DC-DC Boost Converter for High-Voltage/Low-Current Renewable Energy Applications: Hardware Implementation of a New T & SC Boost Converter

    Directory of Open Access Journals (Sweden)

    Sanjeevikumar Padmanaban

    2018-03-01

    Full Text Available In this article a new Transformer and Switched Capacitor-based Boost Converter (T & SC-BC is proposed for high-voltage/low-current renewable energy applications. The proposed T & SC-BC is an original extension for DC-DC boost converter which is designed by utilizing a transformer and switched capacitor (T & SC. Photovoltaic (PV energy is a fast emergent segment among the renewable energy systems. The proposed T & SC-BC combines the features of the conventional boost converter and T & SC to achieve a high voltage conversion ratio. A Maximum Power Point Tracking (MPPT controller is compulsory and necessary in a PV system to extract maximum power. Thus, a photovoltaic MPPT control mechanism also articulated for the proposed T & SC-BC. The voltage conversion ratio (Vo/Vin of proposed converter is (1 + k/(1 − D where, k is the turns ratio of the transformer and D is the duty cycle (thus, the converter provides 9.26, 13.88, 50/3 voltage conversion ratios at 78.4 duty cycle with k = 1, 2, 2.6, respectively. The conspicuous features of proposed T & SC-BC are: (i a high voltage conversion ratio (Vo/Vin; (ii continuous input current (Iin; (iii single switch topology; (iv single input source; (v low drain to source voltage (VDS rating of control switch; (vi a single inductor and a single untapped transformer are used. Moreover, the proposed T & SC-BC topology was compared with recently addressed DC-DC converters in terms of number of components, cost, voltage conversion ratio, ripples, efficiency and power range. Simulation and experimental results are provided which validate the functionality, design and concept of the proposed approach.

  6. Suppressing voltage transients in high voltage power supplies

    International Nuclear Information System (INIS)

    Lickel, K.F.; Stonebank, R.

    1979-01-01

    A high voltage power supply for an X-ray tubes includes voltage adjusting means, a high voltage transformer, switch means connected to make and interrupt the primary current of the transformer, and over-voltage suppression means to suppress the voltage transient produced when the current is switched on. In order to reduce the power losses in the suppression means, an impedance is connected in the transformer primary circuit on operation of the switch means and is subsequently short-circuited by a switch controlled by a timer after a period which is automatically adjusted to the duration of the transient overvoltage. (U.K.)

  7. A molecular switch between the outer and the inner vestibule of the voltage-gated Na+ channel

    International Nuclear Information System (INIS)

    Zarrabi, T.

    2010-01-01

    Na+ channels permit rapid transmission of depolarizing impulses throughout cells and cell networks, and are essential to the proper function of skeletal muscle, the heart and the nervous system. The selectivity filter of the channel is considered to be formed by the amino acids D400, E755, K1237, and A1529 ('DEKA' motif) which are located at the innermost turn of the P-loops connecting S5 and S6 segments of each domain. The inner vestibule is believed to be lined by four S6 helices, one from each domain. Comparison of crystal structures of K+ channels in open and closed states as well as electron paramagnetic resonance spectroscopic studies suggest that the activation gate of voltage-gated ion channels is located at the inner part of the S6 segments. This may also hold true for voltage-gated Na+ channels because mutations in S6 segments alter activation gating. The gate for fast inactivation of the channel has been mapped to the intracellular linker between domains III and IV. This intracellular loop is currently considered to produce channel inactivation by transiently occluding the intracellular vestibule of the channel. The time constants of entry into and recovery from fast inactivation are on the order of milliseconds. Apart from 'fast inactivation' a number of slower inactivated states have been described. During very long depolarizations, on the order of several minutes, rNaV1.4 channels enter a very stable inactivated state which we refer to as 'ultra-slow' inactivation (IUS). In these channels the likelihood of entry into IUS is substantially increased by a mutation in the selectivity filter, K1237E. IUS can be modulated by molecules binding to the outer vestibule, suggesting that a conformational change of the outer vestibule gives rise to this kinetic state. On the other hand, the local anesthetic drug lidocaine, which binds to the internal part of the channel pore, inhibits entry into IUS by a 'foot-in-the-door' mechanism indicating that a

  8. Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

    Science.gov (United States)

    Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

    1998-01-01

    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  9. Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism.

    Science.gov (United States)

    Chakrabarti, Somsubhra; Ginnaram, Sreekanth; Jana, Surajit; Wu, Zong-Yi; Singh, Kanishk; Roy, Anisha; Kumar, Pankaj; Maikap, Siddheswar; Qiu, Jian-Tai; Cheng, Hsin-Ming; Tsai, Ling-Na; Chang, Ya-Ling; Mahapatra, Rajat; Yang, Jer-Ren

    2017-07-05

    Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiO x /TiN structure have been investigated for the first time. The as-deposited amorphous BaTiO x film has been confirmed by high-resolution transmission electron microscopy. X-ray photo-electron spectroscopy shows different oxidation states of Ba in the switching material, which is responsible for tunable more than 10 resistance states by varying negative stop voltage owing to slow decay value of RESET slope (217.39 mV/decade). Quantum conductance phenomenon has been observed in staircase RESET cycle of the memory devices. By inspecting the oxidation states of Ba + and Ba 2+ through measuring H 2 O 2 with a low concentration of 1 nM in electrolyte/BaTiO x /SiO 2 /p-Si structure, the switching mechanism of each HRS level as well as the multi-level phenomenon has been explained by gradual dissolution of oxygen vacancy filament. Along with negative stop voltage modulated multi-level, current compliance dependent multi-level has also been demonstrated and resistance ratio up to 2000 has been achieved even for a thin (voltage switching curve has been simulated as well. Hence, multi-level resistive switching of Cr/BaTiO x /TiN structure implies the promising applications in high dense, multistate non-volatile memories in near future.

  10. On-demand oil-water separation via low-voltage wettability switching of core-shell structures on copper substrates

    Science.gov (United States)

    Kung, Chun Haow; Zahiri, Beniamin; Sow, Pradeep Kumar; Mérida, Walter

    2018-06-01

    A copper mesh with dendritic copper-oxide core-shell structure is prepared using an additive-free electrochemical deposition strategy for on-demand oil-water separation. Electrochemical manipulation of the oxidation state of the copper oxide shell phase results in opposite affinities towards water and oil. The copper mesh can be tuned to manifest both superhydrophobic and superoleophilic properties to enable oil-removal. Conversely, switching to superhydrophilic and underwater superoleophobic allows water-removal. These changes correspond to the application of small reduction voltages (air drying. In the oil-removal mode, heavy oil selectively passes through the mesh while water is retained; in water-removal mode, the mesh allows water to permeate but blocks light oil. The smart membrane achieved separation efficiencies higher than 98% for a series of oil-water mixtures. The separation efficiency remains high with less than 5% variation after 30 cycles of oil-water separation in both modes. The switchable wetting mechanism is demonstrated with the aid of microstructural and electrochemical analysis and based on the well-known Cassie-Baxter and Wenzel theories. The selective removal of water or oil from the oil-water mixtures is driven solely by gravity and yields high efficiency and recyclability. The potential applications for the relevant technologies include oil spills cleanup, fuel purification, and wastewater treatment.

  11. Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films

    Directory of Open Access Journals (Sweden)

    Jian-Yang Lin

    2014-01-01

    Full Text Available SiO2 or Cu-doped SiO2 (Cu:SiO2 insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM cells. The CB-RAMs were then subjected to a constant-voltage stressing (CVS at room temperature. The experimental results show that the room-temperature CVS treatment can effectively affect the current conduction behavior and stabilize the resistive switching of the memory cells. After the CVS, the current conduction mechanisms in the high resistance state during the set process of the Cu/Cu:SiO2/W cell can be changed from Ohm’s law and the space charge limited conduction to Ohm’s law, the Schottky emission, and the space charge limited conduction. Presumably, it is due to the breakage of the conduction filaments during the CVS treatment that the conduction electrons cannot go back to the back electrode smoothly.

  12. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  13. Device for monitoring cell voltage

    Science.gov (United States)

    Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  14. Electro-optic control of a PPLN-unpoled LiNbO3 boundary for low-voltage Q switching of an intracavity frequency-doubled Nd3+:YVO4 laser.

    Science.gov (United States)

    Torregrosa, A J; Maestre, H; Fernández-Pousa, C R; Pereda, J A; Capmany, J

    2009-08-01

    We present a simple technique to integrate an electro-optic Q switch in a periodically poled bulk lithium niobate crystal bounded by two unpoled (monodomain) regions. The technique exploits the high sensitivity to low applied electric fields of the total internal reflection condition in the periodic poled-unpoled boundary for the small grazing incidence angles associated with the diffraction of a focused Gaussian beam that propagates in the periodically poled region with its axis parallel to the boundary. When the arrangement is placed intracavity to a 1064 nm diode-pumped Nd(3+):YVO(4) laser, it performs simultaneously as a Q switch and as a second-harmonic generator, with Q switching starting at applied voltages as low as 1 V over a 500 microm thickness and with no additional optical elements.

  15. Impulse voltage control of continuously tunable bipolar resistive switching in Pt/Bi{sub 0.9}Eu{sub 0.1}FeO{sub 3}/Nb-doped SrTiO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Maocai; Liu, Meifeng; Wang, Xiuzhang [Hubei Normal University, Institute for Advanced Materials, and School of Physics and Electronic Science, Huangshi (China); Li, Meiya; Zhu, Yongdan; Zhao, Meng; Zhang, Feng; Xie, Shuai [Wuhan University, School of Physics and Technology, and Key Laboratory of Artificial Micro/Nano Structures of the Ministry of Education, Wuhan (China); Hu, Zhongqiang [Northeastern University, Department of Electrical and Computer Engineering, Boston, MA (United States); Liu, Jun-Ming [Nanjing University, Laboratory of Solid State Microstructures, Nanjing (China)

    2017-03-15

    Epitaxial Bi{sub 0.9}Eu{sub 0.1}FeO{sub 3} (BEFO) thin films are deposited on Nb-doped SrTiO{sub 3} (NSTO) substrates by pulsed laser deposition to fabricate the Pt/BEFO/NSTO (001) heterostructures. These heterostructures possess bipolar resistive switching, where the resistances versus writing voltage exhibits a distinct hysteresis loop and a memristive behavior with good retention and anti-fatigue characteristics. The local resistive switching is confirmed by the conductive atomic force microscopy (C-AFM), suggesting the possibility to scale down the memory cell size. The observed memristive behavior could be attributed to the ferroelectric polarization effect, which modulates the height of potential barrier and width of depletion region at the BEFO/NSTO interface. The continuously tunable resistive switching behavior could be useful to achieve non-volatile, high-density, multilevel random access memory with low energy consumption. (orig.)

  16. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.; Abdelghany, Mohamed A.; Elsayed, Mohannad Yomn; Elshurafa, Amro M; Salama, Khaled N.

    2014-01-01

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  17. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  18. UV/EB curing in Australia

    International Nuclear Information System (INIS)

    Woods, R.; Garnett, J.; Loo Teck Ng

    1999-01-01

    Progress in LTV/EB curing is reviewed in Australia. Generally the technology is used by those industries where curing is well developed in Europe and North America, however the scale is an order of magnitude lower due to the smaller market size. The Asian economic crisis does not appear to have affected expansion of the technology in Australia. EB continues to be successfully used in the packaging and foam fields whilst in UV, security devices, particularly banknotes are steadily expanding especially in export markets have been studied

  19. EB application in pressure sensitive adhesives

    International Nuclear Information System (INIS)

    Hisashi Itoh; Ichiro Enomoto

    1999-01-01

    Two kinds of pressure sensitive adhesives (PSA's), that were formulations of radiation cross-linkable styrene-isoprene block copolymer (SIS) and complete hydrogenated aliphatic tackifying resin or non-hydrogenated, were prepared and the electron beam (EB) irradiation effect on these PSA performances such as peel strength against some kinds of adherends was studied. The results from measuring of PSA performance exhibit the close correlation between EB irradiation effect of these and the miscibility of the tackifying resin against SIS. Further it was clarified that PSA performance was influenced by the surface tension of adherends

  20. RPC industries - UV and EB equipment manufacturers

    International Nuclear Information System (INIS)

    Rodrigues, A.M.

    1987-01-01

    RPC Industries has been manufacturing electron beam and ultraviolet equipment for the industrial processing of materials for more than 15 years. RPC maintains its headquarters and electron processor manufacturing plant in Hayward, California. UV equipment is made in the company's plant near Chicago. Sales offices are maintained in New York, Illinois, and California in the USA, and in Germany, Japan, Australia, Italy, Israel, and Sweden. Complete testing and pilot facilities are available in Hayward (EB) and near Chicago (UV). Described below are the basic system components, applications and advantages of RPC's UV and EB systems. (orig.)

  1. UV/EB curing market in Indonesia

    International Nuclear Information System (INIS)

    Hilmy, N.; Danu, S.

    1999-01-01

    The most application of UV curing of surface coating in Indonesia are on fancy plywood, furniture and wood flooring industry. Other application are on papers, printing ink/labelling, printed circuit board/PCB and dental materials. At present, application of EB curing coating is still in a pilot plant scale due to the high cost of production. Limited number of application of EB curing by using low energy electron beam machine are on wood panels, ceramics and marbles. This paper describes the market and the problem faced by the largest user of radiation curing systems such as the secondary process plywood, furniture and paper industries

  2. Voltage regulator for generator

    Energy Technology Data Exchange (ETDEWEB)

    Naoi, K

    1989-01-17

    It is an object of this invention to provide a voltage regulator for a generator charging a battery, wherein even if the ambient temperature at the voltage regulator rises abnormally high, possible thermal breakage of the semiconductor elements constituting the voltage regulator can be avoided. A feature of this invention is that the semiconductor elements can be protected from thermal breakage, even at an abnormal ambient temperature rise at the voltage regulator for the battery charging generator, by controlling a maximum conduction ratio of a power transistor in the voltage regulator in accordance with the temperature at the voltage regulator. This is achieved through a switching device connected in series to the field coil of the generator and adapted to be controlled in accordance with an output voltage of the generator and the ambient temperature at the voltage regulator. 6 figs.

  3. Energy reversible switching from amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.; Smith, Casey; Hussain, Muhammad Mustafa

    2013-01-01

    We report observation of energy reversible switching from amorphous metal based nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM switches can be used as a complementary switching element in many nanoelectronic system applications. Its inherent zero power consumption because of mechanical detachment is an attractive feature. However, its operating voltage needs to be in the realm of 1 volt or lower. Appropriate design and lower Young's modulus can contribute achieving lower operating voltage. Therefore, we have developed amorphous metal with low Young's modulus and in this paper reporting the energy reversible switching from a laterally actuated double electrode NEM switch. © 2013 IEEE.

  4. Energy reversible switching from amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.

    2013-08-01

    We report observation of energy reversible switching from amorphous metal based nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM switches can be used as a complementary switching element in many nanoelectronic system applications. Its inherent zero power consumption because of mechanical detachment is an attractive feature. However, its operating voltage needs to be in the realm of 1 volt or lower. Appropriate design and lower Young\\'s modulus can contribute achieving lower operating voltage. Therefore, we have developed amorphous metal with low Young\\'s modulus and in this paper reporting the energy reversible switching from a laterally actuated double electrode NEM switch. © 2013 IEEE.

  5. EB Frond wave energy converter - phase 2

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2005-07-01

    The EB Frond project is a wave energy programme developed by The Engineering Business (EB) from an original idea at Lancaster University. The EB Frond is a wave generator with a collector vane on top of an arm that pivots near the seabed. Phase 1 of the project demonstrated the technical feasibility of the project and provided proof of concept. Phase 2 involved further assesment of the technical and commercial viability of the concept through the development of mathematical and physical modelling methods. The work involved small-scale (1/25th) testing in wave tanks at Newcastle and Lancaster Universities and the development, verification and validation of a time domain mathematical model. The decision by EB to put on hold its renewable generation programme meant that plans to test at an intermediate scale (1/16th), assess different survival strategies in extreme wave conditions, carry out site characterisation for full-scale systems and to produce a robust economic model were not fulfilled. However, the mathematical and physical modelling work was used to develop an economic model for the Frond system. This produced a predicted unit cost of electricity by a pre-commercial 5 MW demonstration farm of about 17 pence/kWh. The report discusses the small-scale testing, test results, mathematical modelling, analysis and interpretation, survivability, the economic model and the development route to full-scale production.

  6. E.B. White: Aspects of Style.

    Science.gov (United States)

    Neumeyer, Peter F.

    1987-01-01

    Assesses the writing style of a famous author of children's books, concluding that E.B. White's informal tone uses anaphora, simple sentences, doubling and redundancy, and mixes colloquial with standard English. Provides examples of his style, from 10 years old to maturity. (NKA)

  7. E.B. White and Charlotte's Web.

    Science.gov (United States)

    Elledge, Scott

    2001-01-01

    Discusses the life and work of E.B. White, describing his research on spiders, examining his development of the story, "Charlotte's Web," and explaining how "Charlotte's Web" is a fabric of memories. Notes how this book faces a variety of truths about the human condition and how it celebrates a child's generous view of and love…

  8. The Role of Microtubule End Binding (EB) Proteins in Ciliogenesis

    DEFF Research Database (Denmark)

    Schrøder, Jacob Morville

    cellular organelles (Lansbergen and Akhmanova, 2006). EB1 also localizes to centrosomes and is required for centrosomal MT anchoring and organization of the MT network (Askham et al., 2002). Further, EB1 has been shown to localize to the flagellar tip and proximal region of the basal bodies......, are required for assembly of primary cilia in cultured human cells. The EB3 - siRNA ciliary phenotype could be rescued by GFP-EB1 expression, and GFP-EB3 over expression resulted in elongated cilia. Transmission electron microscopy (TEM) revealed that EB3-depleted cells possess stumpy cilia, a disorganized...... centrosomal MT array and abnormally long centriole-associated rootlet filaments. Cells lacking EB1 also had stumpy cilia and a disorganized centrosomal MT array, but rootlet filaments appeared normal. Further, live imaging revealed increased release frequency of MTs from the centrosome upon EB1 or EB3...

  9. EB detoxification of liquid hazardous wastes

    International Nuclear Information System (INIS)

    Tata, A.; Giuliani, S.

    1996-07-01

    In the work, an engineering approach to technical solutions, considering accelerated electron beams as radiation source, is carried out, in order to allow and evaluate an effective recovery of drinking water from highly chemically polluted groundwaters. In connection with different engineering technical and economic parameters (suitable doses, EB-machine type, plant features, etc.) and with reference to 1-100 ton/hr contaminated stream flowrate range (2-50 kGy as considered absorbed dose range), a specifically developed computer code was run. Analysis results, based on investment and functioning cost figures evaluated with reference to industrial plant management scenarios, are treatment unit costs showing a noticeable economic attractiveness of radiation EB-technologies in the field of considered applications

  10. Recent advances in application of EB Technology

    Energy Technology Data Exchange (ETDEWEB)

    Mittendorfer, J [Mediscan GmbH, Kremsmuenster (Austria)

    2001-07-01

    In this paper recent advances in application of electron beam technology are presented. Important industrial and scientific achievements of the international community, together with research by Mediscan, Austria, an operator of state-of-the-art electron beam service center and innovator in the field of EB-Technology are reviewed. In addition, areas which may play an important role in the future are identified. Special focus is on the use of X-ray converters and the potential for industrial applications. (author)

  11. Current status of low energy EB machine

    International Nuclear Information System (INIS)

    Toshiro Nishikimi; Shuichi Taniguchi; Kenichi Mizusawa

    1999-01-01

    Electron beam processing systems have been in use in a variety of applications such as curing of paints and printing inks, crosslinking of PE products, treating of rubber tire and so on. Low energy electron processing systems have become popular as self-shielded machines, which are compact and easy to use and do not require special facility as an irradiation room. This manuscript introduces the status of low energy EB (electron beam) machine through Nissin's products current

  12. Recent advances in application of EB Technology

    International Nuclear Information System (INIS)

    Mittendorfer, J.

    2001-01-01

    In this paper recent advances in application of electron beam technology are presented. Important industrial and scientific achievements of the international community, together with research by Mediscan, Austria, an operator of state-of-the-art electron beam service center and innovator in the field of EB-Technology are reviewed. In addition, areas which may play an important role in the future are identified. Special focus is on the use of X-ray converters and the potential for industrial applications. (author)

  13. Composite Material Switches

    Science.gov (United States)

    Javadi, Hamid (Inventor)

    2002-01-01

    A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.

  14. Low voltage varistor ceramics based on SnO2

    Indian Academy of Sciences (India)

    WINTEC

    School of Environmental and Chemical Engineering, Chonbuk National University, Jeonju 561-756, South Korea. † ... et al (2001) compared the grain boundary barrier proper- ... parameter, EB (breakdown voltage), was taken as the field.

  15. Know-How on design of switching regulator

    International Nuclear Information System (INIS)

    1985-08-01

    This book introduces switching regulator from base to application, which deals with fundamentals of switching regulator such as the reason of boom about switching regulator, understanding simple circuit without electric transformer and decision of circuit type with input voltage and output voltage, configuration and characteristic of switching regulator, a concrete design of switching regulator, pulse width control circuit and protection circuit, concrete circuit examples of switching power and the point of switching regulator.

  16. 47 CFR 27.1203 - EBS programming requirements.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 2 2010-10-01 2010-10-01 false EBS programming requirements. 27.1203 Section....1203 EBS programming requirements. (a) Except as provided in paragraphs (b), (c), and (d) of this section, BRS and EBS licensees are authorized to provide fixed or mobile service, except aeronautical...

  17. Application of Solar Power to the Remote Wireless High Voltage Switch Control System%太阳能电源在远程无线高压开关控制系统中的应用研究

    Institute of Scientific and Technical Information of China (English)

    高世勤; 钮承新; 宋小齐

    2012-01-01

    In order to supply double power for the remote wireless control of high voltage switch system,the solar energy photovoltaic power system is used. According to the electrical load conditions of this system and the basic theory of solar energy photovoltaic power generation, the solar energy photovoltaic power generation system which is suitable for the electrified railway catenary's isolating switch control system isdesigned and developed,and it creates conditions for automation reconstruction of isolating switch.%为了实现远程无线控制高压开关系统双电源供电,利用太阳能光伏发电系统为高压开关控制系统提供一路供电电源.根据系统用电负荷情况,利用太阳能光伏发电的基本理论,设计并研制适宜于电气化铁路接触网隔离开关控制系统使用要求的太阳能光伏发电系统,使太阳能电源为电气化铁路接触网隔离开关自动化改造创适条件.

  18. High PRF high current switch

    Science.gov (United States)

    Moran, Stuart L.; Hutcherson, R. Kenneth

    1990-03-27

    A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

  19. A Cell-to-Cell Battery Equalizer With Zero-Current Switching and Zero-Voltage Gap Based on Quasi-Resonant LC Converter and Boost Converter

    DEFF Research Database (Denmark)

    Shang, Yunlong; Zhang, Chenghui; Cui, Naxin

    2015-01-01

    these difficulties, an innovative direct cell-to-cell battery equalizer based on quasi-resonant LC converter (QRLCC) and boost DC-DC converter (BDDC) is proposed. The QRLCC is employed to gain zero-current switching (ZCS), leading to a reduction of power losses. The BDDC is employed to enhance the equalization...

  20. Voltage-controlled ferroelastic switching in Pb(Zr.sub.0.2./sub.Ti.sub.0.8./sub.)O.sub.3./sub. thin films

    Czech Academy of Sciences Publication Activity Database

    Khan, A.I.; Martí, Xavier; Serrao, C.; Ramesh, R.; Salahuddin, S.

    2015-01-01

    Roč. 15, č. 4 (2015), s. 2229-2234 ISSN 1530-6984 Institutional support: RVO:68378271 Keywords : nanodomains * ferroelastic switching * ferroelectricity * Pb(Zr 0.2 Ti 0.8 )O 3 * thin film Subject RIV: BE - Theoretical Physics Impact factor: 13.779, year: 2015

  1. Switched capacitor DC-DC converter with switch conductance modulation and Pesudo-fixed frequency control

    DEFF Research Database (Denmark)

    Larsen, Dennis Øland; Vinter, Martin; Jørgensen, Ivan Harald Holger

    A switched capacitor dc-dc converter with frequency-planned control is presented. By splitting the output stage switches in eight segments the output voltage can be regulated with a combination of switching frequency and switch conductance. This allows for switching at predetermined frequencies, 31...

  2. Capillary condensation and quantum vacuum effects on the pull-in voltage of electrostatic switches with self-affine rough plates

    NARCIS (Netherlands)

    Palasantzas, George

    2006-01-01

    In this work, we study the influence of capillary forces in combination with electrostatic and quantum vacuum generated forces on the pull-in voltage of microswitches having self-affine rough surfaces. This type of roughness is described by the rms roughness amplitude w, the in-plane correlation

  3. Overview of UV and EB curing

    International Nuclear Information System (INIS)

    Garnett, J.L.

    2000-01-01

    Full text: UV and EB are complementary techniques in radiation curing. In the proposed paper, a brief review of both fields will be given. This will include principles of the process, the chemistry of the systems including monomers/oligomers/polymers used, additives required where necessary such as photoinitiators for UV, flow aids, adhesion promoters and the like. The types of equipment used in such processes will also be discussed including low energy electron beam utilisation and excimer curing. The advantages and disadvantages of both techniques will be examined. Mechanistic aspects of both curing systems will be discussed. Applications of the technology including developments in the banknote printing field will be summarised

  4. Demonstration of Ultra-Fast Switching in Nano metallic Resistive Switching Memory Devices

    International Nuclear Information System (INIS)

    Yang, Y.

    2016-01-01

    Interdependency of switching voltage and time creates a dilemma/obstacle for most resistive switching memories, which indicates low switching voltage and ultra-fast switching time cannot be simultaneously achieved. In this paper, an ultra-fast (sub-100 ns) yet low switching voltage resistive switching memory device (“nano metallic ReRAM”) was demonstrated. Experimental switching voltage is found independent of pulse width (intrinsic device property) when the pulse is long but shows abrupt time dependence (“cliff”) as pulse width approaches characteristic RC time of memory device (extrinsic device property). Both experiment and simulation show that the onset of cliff behavior is dependent on physical device size and parasitic resistance, which is expected to diminish as technology nodes shrink down. We believe this study provides solid evidence that nano metallic resistive switching memory can be reliably operated at low voltage and ultra-fast regime, thus beneficial to future memory technology.

  5. Temporary over voltages in the high voltage networks

    International Nuclear Information System (INIS)

    Vukelja, Petar; Naumov, Radomir; Mrvic, Jovan; Minovski, Risto

    2001-01-01

    The paper treats the temporary over voltages that may arise in the high voltage networks as a result of: ground faults, loss of load, loss of one or two phases and switching operation. Based on the analysis, the measures for their limitation are proposed. (Original)

  6. EB1 is required for primary cilia assembly in fibroblasts

    DEFF Research Database (Denmark)

    Schrøder, Jacob M; Schneider, Linda; Christensen, Søren T

    2007-01-01

    EB1 is a small microtubule (MT)-binding protein that associates preferentially with MT plus ends and plays a role in regulating MT dynamics. EB1 also targets other MT-associated proteins to the plus end and thereby regulates interactions of MTs with the cell cortex, mitotic kinetochores, and diff...... that localization of EB1 at the centriole/basal body is required for primary cilia assembly in fibroblasts....

  7. UV and EB radiation processing in developing countries

    International Nuclear Information System (INIS)

    Garnett, J.L.

    1991-01-01

    Ultraviolet and electron beams (EB) are to be considered as complementary technologies in the radiation processing field. In many countries, UV processing is used as the pathfinder for EB. In the developing countries the decision to adopt radiation processing techniques to choose between UV and EB will largely be determined by economics, the availability of the chemists and also skilled personnel to service both lines and equipment. (orig./A.B.)

  8. Study on the heat-resistant EB curing composites

    International Nuclear Information System (INIS)

    Bao Jianwen; Li Yang; Li Fengmei

    2000-01-01

    There are many advantages in the EB-curing process of composites. Heat-resistant EB-curing composites could substitute for polyimide composites used in aeronautical engine. The effects of catalyst and dose on the cured resin were investigated. The heat-resistance of the resin cured by EB was evaluated by dynamic mechanical thermal analysis (DMTA). The experiment result shows that the mechanical property of the composites cured by EB could meet the needs of the aeronautical engine in 250degC. (author)

  9. Power-MOSFET Voltage Regulator

    Science.gov (United States)

    Miller, W. N.; Gray, O. E.

    1982-01-01

    Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

  10. Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications

    Energy Technology Data Exchange (ETDEWEB)

    Tiskumara, R. [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529 (United States); Joshi, R. P., E-mail: ravi.joshi@ttu.edu; Mauch, D.; Dickens, J. C.; Neuber, A. A. [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2015-09-07

    A model-based analysis of the steady-state, current-voltage response of semi-insulating 4H-SiC is carried out to probe the internal mechanisms, focusing on electric field driven effects. Relevant physical processes, such as multiple defects, repulsive potential barriers to electron trapping, band-to-trap impact ionization, and field-dependent detrapping, are comprehensively included. Results of our model match the available experimental data fairly well over orders of magnitude variation in the current density. A number of important parameters are also extracted in the process through comparisons with available data. Finally, based on our analysis, the possible presence of holes in the samples can be discounted up to applied fields as high as ∼275 kV/cm.

  11. MCT/MOSFET Switch

    Science.gov (United States)

    Rippel, Wally E.

    1990-01-01

    Metal-oxide/semiconductor-controlled thyristor (MCT) and metal-oxide/semiconductor field-effect transistor (MOSFET) connected in switching circuit to obtain better performance. Offers high utilization of silicon, low forward voltage drop during "on" period of operating cycle, fast turnon and turnoff, and large turnoff safe operating area. Includes ability to operate at high temperatures, high static blocking voltage, and ease of drive.

  12. Implementation of KoHLT-EB DAQ System using compact RIO with EPICS

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Dae-Sik; Kim, Suk-Kwon; Lee, Dong Won [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Cho, Seungyon [National Fusion Research Institute, Daejeon (Korea, Republic of)

    2016-10-15

    EPICS (Experimental Physics and Industrial Control System) is a collection of software tools collaboratively developed which can be integrated to provide a comprehensive and scalable control system. Currently there is an increase in use of such systems in large Physics experiments like KSTAR, ITER and DAIC (Daejeon Accelerator Ion Complex). The Korean heat load test facility (KoHLT-EB) was installed at KAERI. This facility is utilized for a qualification test of the plasma facing component (PFC) for the ITER first wall and DEMO divertor, and the thermo-hydraulic experiments. The existing data acquisition device was Agilent 34980A multifunction switch and measurement unit and controlled by Agilent VEE. In the present paper, we report the EPICS based newly upgraded KoHLT-EB DAQ system which is the advanced data acquisition system using FPGA-based reconfigurable DAQ devices like compact RIO. The operator interface of KoHLT-EB DAQ system is composed of Control-System Studio (CSS) and another server is able to archive the related data using the standalone archive tool and the archiveviewer can retrieve that data at any time in the infra-network.

  13. Piezo Voltage Controlled Planar Hall Effect Devices.

    Science.gov (United States)

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-06-22

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

  14. A New Asymmetrical Current-fed Converter with Voltage Lifting

    Directory of Open Access Journals (Sweden)

    DELSHAD, M.

    2011-05-01

    Full Text Available This paper presents a new zero voltage switching current-fed DC-DC converter with high voltage gain. In this converter all switches (main and auxiliary turn on under zero voltage switching and turn off under almost zero voltage switching due to snubber capacitor. Furthermore, the voltage spike across the main switch due to leakage inductance of forward transformer is absorbed. The flyback transformer which is connected to the output in series causes to high voltage gain and less voltage stress on the power devices. Considering high efficiency and voltage gain of this converter, it is suitable for green generated systems such as fuel cells or photovoltaic systems. The presented experimental results verify the integrity of the proposed converter.

  15. Creep properties of EB welded joint on Hastelloy X

    International Nuclear Information System (INIS)

    Arata, Yoshiaki; Susei, Shuzo; Shimizu, Shigeki; Satoh, Keisuke; Nagai, Hiroyoshi.

    1980-01-01

    In order to clarify the creep properties of EB welds on Hastelloy X which is one of the candidate alloys for components of VHTR, creep tests on EB weld metal and welded joint were carried out. The results were discussed in comparison with those of base metal and TIG welds. Further, EB welds were evaluated from the standpoint of high temperature structural design. The results obtained are summarized as follows. 1) Both creep rupture strengths of EB weld metal and EB welded joint are almost equal to that of base metal, but those of TIG welds are lower than base metal. As for the secondary creep rate, EB weld metal is higher and TIG weld metal is lower than base metal. As for the time to onset of tertiary creep, no remarkable difference among base metal, EB weld metal and TIG weld metal is observed. 2) In case of EB weld metal, although anisotropy is slightly observed, the ductility is same or more as compared with base metal. In case of TIG weld metal, on the contrary, anisotropy is not observed and the ductility is essentially low. 3) Such rupture morphology of EB weld metal as appears to have resulted from interconnection of voids which occurred at grain boundary is similar to base metal. In case of TIG weld metal, however, many cracks with sharp tips are observed at grain boundary, and the rupture appears to have occurred in brittle by propagation and connection of the cracks. 4) It can be said from the standpoint of high temperature structural design that EB welding is very suitable to welding for structure where creep effects are significant, because both of the creep ductility and the rupture strength are almost equal to those of base metal. (author)

  16. Control synthesis of switched systems

    CERN Document Server

    Zhao, Xudong; Niu, Ben; Wu, Tingting

    2017-01-01

    This book offers its readers a detailed overview of the synthesis of switched systems, with a focus on switching stabilization and intelligent control. The problems investigated are not only previously unsolved theoretically but also of practical importance in many applications: voltage conversion, naval piloting and navigation and robotics, for example. The book considers general switched-system models and provides more efficient design methods to bring together theory and application more closely than was possible using classical methods. It also discusses several different classes of switched systems. For general switched linear systems and switched nonlinear systems comprising unstable subsystems, it introduces novel ideas such as invariant subspace theory and the time-scheduled Lyapunov function method of designing switching signals to stabilize the underlying systems. For some typical switched nonlinear systems affected by various complex dynamics, the book proposes novel design approaches based on inte...

  17. Fundamental studies on the switching in liquid nitrogen environment using vacuum switches for application in future high-temperature superconducting medium-voltage power grids; Grundsatzuntersuchungen zum Schalten in Fluessigstickstoff-Umgebung mit Vakuumschaltern zur Anwendung in zukuenftigen Hochtemperatur-Supraleitungs-Mittelspannungsnetzen

    Energy Technology Data Exchange (ETDEWEB)

    Golde, Karsten

    2016-06-24

    By means of superconducting equipment it is possible to reduce the transmission losses in distribution networks while increasing the transmission capacity. As a result even saving a superimposed voltage level would be possible, which can put higher investment costs compared to conventional equipment into perspective. For operation of superconducting systems it is necessary to integrate all equipment in the cooling circuit. This also includes switchgears. Due to cooling with liquid nitrogen, however, only vacuum switching technology comes into question. Thus, the suitability of vacuum switches is investigated in this work. For this purpose the mechanics of the interrupters is considered first. Material investigations and switching experiments at ambient temperature and in liquid nitrogen supply information on potential issues. For this purpose, a special pneumatic construction is designed, which allows tens of thousands of switching cycles. Furthermore, the electrical resistance of the interrupters is considered. Since the contact system consists almost exclusively of copper, a remaining residual resistance and appropriate thermal losses must be considered. Since they have to be cooled back, an appropriate evaluation is given taking environmental parameters into account. The dielectric strength of vacuum interrupters is considered both at ambient temperature as well as directly in liquid nitrogen. For this purpose different contact distances are set at different interrupter types. A distinction is made between internal and external dielectric strength. Conditioning and deconditioning effects are minimized by an appropriate choice of the test circuit. The current chopping and resulting overvoltages are considered to be one of the few drawbacks of vacuum switching technology. Using a practical test circuit the height of chopping current is determined and compared for different temperatures. Due to strong scattering the evaluation is done using statistical methods. At

  18. Antiviral activity of the EB peptide against zoonotic poxviruses

    Directory of Open Access Journals (Sweden)

    Altmann Sharon E

    2012-01-01

    Full Text Available Abstract Background The EB peptide is a 20-mer that was previously shown to have broad spectrum in vitro activity against several unrelated viruses, including highly pathogenic avian influenza, herpes simplex virus type I, and vaccinia, the prototypic orthopoxvirus. To expand on this work, we evaluated EB for in vitro activity against the zoonotic orthopoxviruses cowpox and monkeypox and for in vivo activity in mice against vaccinia and cowpox. Findings In yield reduction assays, EB had an EC50 of 26.7 μM against cowpox and 4.4 μM against monkeypox. The EC50 for plaque reduction was 26.3 μM against cowpox and 48.6 μM against monkeypox. A scrambled peptide had no inhibitory activity against either virus. EB inhibited cowpox in vitro by disrupting virus entry, as evidenced by a reduction of the release of virus cores into the cytoplasm. Monkeypox was also inhibited in vitro by EB, but at the attachment stage of infection. EB showed protective activity in mice infected intranasally with vaccinia when co-administered with the virus, but had no effect when administered prophylactically one day prior to infection or therapeutically one day post-infection. EB had no in vivo activity against cowpox in mice. Conclusions While EB did demonstrate some in vivo efficacy against vaccinia in mice, the limited conditions under which it was effective against vaccinia and lack of activity against cowpox suggest EB may be more useful for studying orthopoxvirus entry and attachment in vitro than as a therapeutic against orthopoxviruses in vivo.

  19. Switched-capacitor isolated LED driver

    Science.gov (United States)

    Sanders, Seth R.; Kline, Mitchell

    2016-03-22

    A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

  20. Low voltage 80 KV to 125 KV electron processors

    International Nuclear Information System (INIS)

    Lauppi, U.V.

    1999-01-01

    The classic electron beam technology made use of accelerating energies in the voltage range of 300 to 800 kV. The first EB processors - built for the curing of coatings - operated at 300 kV. The products to be treated were thicker than a simple layer of coating with thicknesses up to 100g and more. It was only in the beginning of the 1970's that industrial EB processors with accelerating voltages below 300 kV appeared on the market. Our company developed the first commercial electron accelerator without a beam scanner. The new EB machine featured a linear cathode, emitting a shower or 'curtain' of electrons over the full width of the product. These units were much smaller than anv previous EB processors and dedicated to the curing of coatings and other thin layers. ESI's first EB units operated with accelerating voltages between 150 and 200 kV. In 1993 ESI announced the introduction of a new generation of Electrocure. EB processors operating at 120 kV, and in 1998, at the RadTech North America '98 Conference in Chicago, the introduction of an 80 kV electron beam processor under the designation Microbeam LV

  1. Ultrafast pulse generation in photoconductive switches

    DEFF Research Database (Denmark)

    Keil, Ulrich Dieter Felix; Dykaar, D. R.

    1996-01-01

    Carrier and field dynamics in photoconductive switches are investigated by electrooptic sampling and voltage-dependent reflectivity measurements. We show that the nonuniform field distribution due to the two-dimensional nature of coplanar photoconductive switches, in combination with the large di...... difference in the mobilities of holes and electrons, determine the pronounced polarity dependence. Our measurements indicate that the pulse generation mechanism is a rapid voltage breakdown across the photoconductive switch and not a local field breakdown...

  2. Characteristics of output voltage and current of integrated nanogenerators

    KAUST Repository

    Yang, Rusen; Qin, Yong; Li, Cheng; Dai, Liming; Wang, Zhong Lin

    2009-01-01

    three criteria: Schottky behavior test, switching-polarity tests, and linear superposition of current and voltage tests. The 11 tests can effectively rule out the system artifacts, whose sign does not change with the switching measurement polarity

  3. THE CONCEPT OF INTEGRATED ENGINEERING AND BUSINESS (EB EDUCATION SYSTEM

    Directory of Open Access Journals (Sweden)

    Michał Charlak

    2013-12-01

    Full Text Available In our approach to engineering and business education system an engineer is a man working as creator and user of technical products. We stress that the process of understanding and gaining knowledge of technical reality and creativity of engineers are the essential for EB concept . Next, we describe briefly three perspectives for building the system of innovative product origination as a basis for EB system: 1 designer’s perspective; 2 business perspective. 3 consumer perspective.

  4. Novel zero voltage transition pulse width modulation flyback converter

    Science.gov (United States)

    Adib, Ehsan; Farzanehfard, Hosein

    2010-09-01

    In this article, a new zero voltage (ZV) transition flyback converter is introduced which uses a simple auxiliary circuit. In this converter, ZV switching condition is achieved for the converter switch while zero current switching condition is attained for the auxiliary switch. There is no additional voltage and current stress on the main switch. Main diode, auxiliary circuit voltage and current ratings are low. The proposed converter is analysed and design procedure is discussed. The presented experimental results of a prototype converter justify the theoretical analysis.

  5. Amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.; Smith, Casey; Hussain, Muhammad Mustafa

    2013-01-01

    Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

  6. Amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.

    2013-04-01

    Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

  7. Energy losses in switches

    International Nuclear Information System (INIS)

    Martin, T.H.; Seamen, J.F.; Jobe, D.O.

    1993-01-01

    The authors experiments show energy losses between 2 and 10 times that of the resistive time predictions. The experiments used hydrogen, helium, air, nitrogen, SF 6 polyethylene, and water for the switching dielectric. Previously underestimated switch losses have caused over predicting the accelerator outputs. Accurate estimation of these losses is now necessary for new high-efficiency pulsed power devices where the switching losses constitute the major portion of the total energy loss. They found that the switch energy losses scale as (V peak I peak ) 1.1846 . When using this scaling, the energy losses in any of the tested dielectrics are almost the same. This relationship is valid for several orders of magnitude and suggested a theoretical basis for these results. Currents up to .65 MA, with voltages to 3 MV were applied to various gaps during these experiments. The authors data and the developed theory indicates that the switch power loss continues for a much longer time than the resistive time, with peak power loss generally occurring at peak current in a ranging discharge instead of the early current time. All of the experiments were circuit code modeled after developing a new switch loss version based on the theory. The circuit code predicts switch energy loss and peak currents as a function of time. During analysis of the data they noticed slight constant offsets between the theory and data that depended on the dielectric. They modified the plasma conductivity for each tested dielectric to lessen this offset

  8. EB-curing of coatings on wood composite boards

    International Nuclear Information System (INIS)

    Czvikovszky, T.; Czajlic, I.; Takacs, E.; Ille, A.; Salleh, N.G.; Alpar, T.

    1988-01-01

    The industrial radiation processing using low energy electron beam (EB) accelerators lower than 300 keV offers high speed, safe technologies for the chemical conversion of thin layer coatings. Because of the nonselective mode of initiating chain reaction polymerization involving free radicals in synthetic coating layers and suitable substrates, the EB curing of the coatings on woods and papers has particular advantage. Hungary decided to start an up-to-date EB line to process cement-bound (CB) wood chipboards with pigmented acrylic coatings. The CB wood chipboards contain more than 60 % of portland cement and up to 40 % of wood particles. They are produced as large boads of 6 - 16 mm thickness. In their fireproof character and other aspects, they are similar to asbestos-cement boards without containing carcinagenic asbestos, and are stable against moisture and atmospheric influences. EB-cured acrylate coating improved further those properties, and makes them valuable structural material. Oligomers and monomers as the main components of EB curable coatings, the irradiation with a Van de Graaff type electron accelerator of 2 MeV and the results are reported. The oligomers play the most important role in the formation of radiation curable coatings. (K.I.)

  9. Recruitment of EB1, a Master Regulator of Microtubule Dynamics, to the Surface of the Theileria annulata Schizont

    KAUST Repository

    Woods, Kerry L.

    2013-05-09

    The apicomplexan parasite Theileria annulata transforms infected host cells, inducing uncontrolled proliferation and clonal expansion of the parasitized cell population. Shortly after sporozoite entry into the target cell, the surrounding host cell membrane is dissolved and an array of host cell microtubules (MTs) surrounds the parasite, which develops into the transforming schizont. The latter does not egress to invade and transform other cells. Instead, it remains tethered to host cell MTs and, during mitosis and cytokinesis, engages the cell\\'s astral and central spindle MTs to secure its distribution between the two daughter cells. The molecular mechanism by which the schizont recruits and stabilizes host cell MTs is not known. MT minus ends are mostly anchored in the MT organizing center, while the plus ends explore the cellular space, switching constantly between phases of growth and shrinkage (called dynamic instability). Assuming the plus ends of growing MTs provide the first point of contact with the parasite, we focused on the complex protein machinery associated with these structures. We now report how the schizont recruits end-binding protein 1 (EB1), a central component of the MT plus end protein interaction network and key regulator of host cell MT dynamics. Using a range of in vitro experiments, we demonstrate that T. annulata p104, a polymorphic antigen expressed on the schizont surface, functions as a genuine EB1-binding protein and can recruit EB1 in the absence of any other parasite proteins. Binding strictly depends on a consensus SxIP motif located in a highly disordered C-terminal region of p104. We further show that parasite interaction with host cell EB1 is cell cycle regulated. This is the first description of a pathogen-encoded protein to interact with EB1 via a bona-fide SxIP motif. Our findings provide important new insight into the mode of interaction between Theileria and the host cell cytoskeleton. 2013 Woods et al.

  10. Recruitment of EB1, a master regulator of microtubule dynamics, to the surface of the Theileria annulata schizont.

    Directory of Open Access Journals (Sweden)

    Kerry L Woods

    2013-05-01

    Full Text Available The apicomplexan parasite Theileria annulata transforms infected host cells, inducing uncontrolled proliferation and clonal expansion of the parasitized cell population. Shortly after sporozoite entry into the target cell, the surrounding host cell membrane is dissolved and an array of host cell microtubules (MTs surrounds the parasite, which develops into the transforming schizont. The latter does not egress to invade and transform other cells. Instead, it remains tethered to host cell MTs and, during mitosis and cytokinesis, engages the cell's astral and central spindle MTs to secure its distribution between the two daughter cells. The molecular mechanism by which the schizont recruits and stabilizes host cell MTs is not known. MT minus ends are mostly anchored in the MT organizing center, while the plus ends explore the cellular space, switching constantly between phases of growth and shrinkage (called dynamic instability. Assuming the plus ends of growing MTs provide the first point of contact with the parasite, we focused on the complex protein machinery associated with these structures. We now report how the schizont recruits end-binding protein 1 (EB1, a central component of the MT plus end protein interaction network and key regulator of host cell MT dynamics. Using a range of in vitro experiments, we demonstrate that T. annulata p104, a polymorphic antigen expressed on the schizont surface, functions as a genuine EB1-binding protein and can recruit EB1 in the absence of any other parasite proteins. Binding strictly depends on a consensus SxIP motif located in a highly disordered C-terminal region of p104. We further show that parasite interaction with host cell EB1 is cell cycle regulated. This is the first description of a pathogen-encoded protein to interact with EB1 via a bona-fide SxIP motif. Our findings provide important new insight into the mode of interaction between Theileria and the host cell cytoskeleton.

  11. Transient voltage oscillations in coils

    International Nuclear Information System (INIS)

    Chowdhuri, P.

    1985-01-01

    Magnet coils may be excited into internal voltage oscillations by transient voltages. Such oscillations may electrically stress the magnet's dielectric components to many times its normal stress. This may precipitate a dielectric failure, and the attendant prolonged loss of service and costly repair work. Therefore, it is important to know the natural frequencies of oscillations of a magnet during the design stage, and to determine whether the expected switching transient voltages can excite the magnet into high-voltage internal oscillations. The series capacitance of a winding significantly affects its natural frequencies. However, the series capacitance is difficult to calculate, because it may comprise complex capacitance network, consisting of intra- and inter-coil turn-to-turn capacitances of the coil sections. A method of calculating the series capacitance of a winding is proposed. This method is rigorous but simple to execute. The time-varying transient voltages along the winding are also calculated

  12. Scania RBS brake system; Das Bremssystem EBS von Scania

    Energy Technology Data Exchange (ETDEWEB)

    Winterhagen, J.

    1996-09-01

    Scania claims to be the first producer of industrial vehicles to market an electronic braking system (EBS) combined with disc brakes for all axles. The new braking systems for long-distance trailers were presented for the first time at the IAA, Hanover, in September 1996. (orig.) [Deutsch] Scania ist nach eigenen Angaben der erste Lkw-Hersteller, der eine elektronisch geregelte Bremsanlage (EBS) in Kombination mit Scheibenbremsen an allen Achsen auf den Markt bringt. Der Oeffentlichkeit stellt Scania das neue Bremssystem fuer die Fernverkehrs-Zugmaschinen der Baureihe 4 zum ersten Mal auf der IAA in Hannover im September 1996 vor. (orig.)

  13. The chemistry of UV and EB radiation curing

    International Nuclear Information System (INIS)

    Garnett, J.L.

    1987-01-01

    The application of photopolymerisation (UV) and electron beam (EB) technologies in radiation rapid cure (RRC) processing is discussed. The chemistry associated with such reactions and the mechanisms of the processes are treated. The occurrence of concurrent grafting to substrate with radiation curing of film is shown to be an advantage in enhancing the properties of certain finished products. The parameters influencing the optimum grafting yield in such RRC processes are discussed. In many applications, the chemistry of the process combined with the machine, expecially for EB, is shown a so-called ''turn-key'' operation. (author)

  14. EB dose calibration for 10 MeV linear accelerator

    International Nuclear Information System (INIS)

    Owczarczyk, H.B.; Migdal, W.; Stachowicz, W.

    2002-01-01

    The National Institute of Standards and Technology Gaitherburg USA has done in co-operation with INCT Warsaw the EPR dose measurements for two INCT 60 Co irradiators using l-alanine standard pellets as dosimeter medium. In the study the comparative EPR measurements of doses up to 40 kGy have been done using l-alanine powder with 60 Co source (reference to NIST standard) and EB linear accelerator, respectively. On the basis of this comparative study 5% correction factor for EB dose measurements has been adapted in the INCT Experimental Plant for Food Irradiation traceable to the dose estimations done with the Risoe calorimetric system

  15. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

    2012-01-20

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  16. EB treatment of carbon nanotube-reinforced polymer composites

    International Nuclear Information System (INIS)

    Szebenyi, G.; Romhany, G.; Czvikovszky, T.; Vajna, B.

    2011-01-01

    Complete text of publication follows. A small amount - less than 0.5% - carbon nanotube reinforcement may improve significantly the mechanical properties of epoxy based composite materials. The basic technical problem is on one side the dispersion of the nanotubes into the viscous matrix resin. Namely the fine, powder-like - less than 100 nanometer diameter - nanotubes are prone to form aggregates. On the other side, the good connection between the nanofiber and matrix, - which is determining the success of the reinforcement, - requires some efficient adhesion promoting treatment. After an elaborate masterbatch mixing technology we applied Electron Beam treatment of epoxy-matrix polymer composites containing carbon nanotubes in presence of vinylester resins. The Raman spectra of vinylester-epoxy mixtures treated by an 8 MeV EB showed the advantage of the electron treatment. Even in the case of partially immiscible epoxy and vinylester resins, the anchorage of carbon nanotubes reflects improvement if a reasonable 25 kGy EB dose is applied. Atomic Force Microscopy as well as mechanical tests on flexural and impact properties confirm the benefits of EB treatment. Simultaneous application of multiwall carbon nanotubes and 'conventional' carbon fibers as reinforcement in vinylester modified epoxies results in new types of hybrid nanocomposites as engineering materials. The bending- and interlaminar properties of such hybrid systems showed the beneficial effect of the EB treatment. Acknowledgement: This work has been supported by the New Hungary Development Plan (Project ID: TAMOP-4.2.1/B-09/1/KMR-2010-0002).

  17. Exciter switch

    Science.gov (United States)

    Mcpeak, W. L.

    1975-01-01

    A new exciter switch assembly has been installed at the three DSN 64-m deep space stations. This assembly provides for switching Block III and Block IV exciters to either the high-power or 20-kW transmitters in either dual-carrier or single-carrier mode. In the dual-carrier mode, it provides for balancing the two drive signals from a single control panel located in the transmitter local control and remote control consoles. In addition to the improved switching capabilities, extensive monitoring of both the exciter switch assembly and Transmitter Subsystem is provided by the exciter switch monitor and display assemblies.

  18. Three-level boost converter with zero voltage transition

    Directory of Open Access Journals (Sweden)

    Kuo-Ing Hwu

    2017-06-01

    Full Text Available As compared with the traditional boost converter, the three-level boost converter possesses several advantages, such as lower switch voltage stresses and lower inductor current ripple. To improve the efficiency, this paper proposes a zero voltage transition (ZVT three-level boost converter. With the proposed ZVT circuit, the switches can achieve soft switching. Moreover, by using the voltage balance control, the output voltage can be equally across the output capacitors. In this study, the effectiveness of the proposed topology is verified by the experimental results based on the field-programmable gate array control.

  19. Voltage harmonic elimination with RLC based interface smoothing filter

    International Nuclear Information System (INIS)

    Chandrasekaran, K; Ramachandaramurthy, V K

    2015-01-01

    A method is proposed for designing a Dynamic Voltage Restorer (DVR) with RLC interface smoothing filter. The RLC filter connected between the IGBT based Voltage Source Inverter (VSI) is attempted to eliminate voltage harmonics in the busbar voltage and switching harmonics from VSI by producing a PWM controlled harmonic voltage. In this method, the DVR or series active filter produces PWM voltage that cancels the existing harmonic voltage due to any harmonic voltage source. The proposed method is valid for any distorted busbar voltage. The operating VSI handles no active power but only harmonic power. The DVR is able to suppress the lower order switching harmonics generated by the IGBT based VSI. Good dynamic and transient results obtained. The Total Harmonic Distortion (THD) is minimized to zero at the sensitive load end. Digital simulations are carried out using PSCAD/EMTDC to validate the performance of RLC filter. Simulated results are presented. (paper)

  20. Development of the switching components for ZT-40

    International Nuclear Information System (INIS)

    Melton, J.G.; Dike, R.S.; Hanks, K.W.; Nunnally, W.C.

    1977-01-01

    Switching of the main capacitor banks for ZT-40 will be accomplished by spark gap switches. Initially, there will be 576 start switches and 288 crowbar switches. A development program is under way to develop three switches; (1) a versatile start switch, which can be used for both the I/sub z/ and the I/sub theta/ capacitor banks, with a wide operating voltage range, (2) a crowbar switch which is capable of crowbarring the circuit without the power crowbar bank, and (3) a power crowbar switch, which can handle 50 to 100 coulombs, so that a large number of crowbar switches will not be required when the power crowbar circuit is added. The problems with the start switches and the first crowbar switch have been solved, or alleviated. The development of a power crowbar switch has just begun

  1. Switching dynamics of TaOx-based threshold switching devices

    Science.gov (United States)

    Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

    2018-03-01

    Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

  2. EB-promoted recycling of waste tire rubber with polyolefins

    Science.gov (United States)

    Mészáros, László; Bárány, Tamás; Czvikovszky, Tibor

    2012-09-01

    Despite the fact that more and more methods and solutions are used in the recycling of polymers, there are still some problems, especially in the recycling of cross-linked materials such as rubber. Usually the biggest problem is the lack of compatibility between the cross-linked rubber and the thermoplastic matrix. In this study we applied ground tire rubber (GTR) as recycled material. The GTR was embedded into polyethylene (PE) and polyethylene/ethylene-vinyl acetate copolymer (PE/EVA) matrices. In order to increase the compatibility of the components electron beam (EB) irradiation was applied. The results showed that the irradiation has a beneficial effect on the polymer-GTR interfacial connection. The EB treatment increased not only the tensile strength but also the elongation at break. The irradiation had also positive effect on the impact strength properties.

  3. Thermal conductivity issues of EB-PVD thermal barrier coatings

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, U.; Raetzer-Scheibe, H.J.; Saruhan, B. [DLR - German Aerospace Center, Institute of Materials Research, 51170 Cologne (Germany); Renteria, A.F. [BTU, Physical Metallurgy and Materials Technology, Cottbus (Germany)

    2007-09-15

    The thermal conductivity of electron-beam physical vapor deposited (EB-PVD) thermal barrier coatings (TBCs) was investigated by the Laser Flash technique. Sample type and methodology of data analyses as well as atmosphere during the measurement have some influence on the data. A large variation of the thermal conductivity was found by changes in TBC microstructure. Exposure at high temperature caused sintering of the porous microstructure that finally increased thermal conductivity up to 30 %. EB-PVD TBCs show a distinct thickness dependence of the thermal conductivity due to the anisotropic microstructure in thickness direction. Thin TBCs had a 20 % lower thermal conductivity than thick coatings. New compositions of the ceramic top layer offer the largest potential to lower thermal conductivity. Values down to 0.8W/(mK) have been already demonstrated with virgin coatings of pyrochlore compositions. (Abstract Copyright [2007], Wiley Periodicals, Inc.) [German] Die Waermeleitfaehigkeit von elektronenstrahl-aufgedampften (EB-PVD) Waermedaemmschichten (TBCs) wurde mittels Laser-Flash untersucht. Probentyp, Messmethodik und die Atmosphaere waehrend der Messung haben einen Einfluss auf die Ergebnisse. Aenderungen in der Mikrostruktur der TBC fuehrten zu grossen Unterschieden der Waermeleitfaehigkeit. Eine Hochtemperaturbelastung verursachte Sintervorgaenge in der poroesen Mikrostruktur, was die Waermeleitfaehigkeit um bis zu 30 % ansteigen liess. EB-PVD TBCs zeigen eine deutliche Dickenabhaengigkeit der Waermeleitfaehigkeit durch die Anisotropie der Mikrostruktur in dieser Richtung. Duenne TBCs haben eine um 20 % geringere Waermeleitfaehigkeit als dicke Schichten. Neue Zusammensetzungen der keramischen Deckschicht bieten die groessten Moeglichkeiten fuer eine Reduktion der Waermeleitfaehigkeit. Werte bis zu 0,8 W/(mK) wurden damit bereits erreicht. (Abstract Copyright [2007], Wiley Periodicals, Inc.)

  4. IGBT: a solid state switch

    International Nuclear Information System (INIS)

    Chatroux, D.; Maury, J.; Hennevin, B.

    1993-01-01

    A Copper Vapour Laser Power Supply has been designed using a solid state switch consisting in eighteen Isolated Gate Bipolar Transistors (IGBT), -1200 volts, 400 Amps, each-in parallel. This paper presents the Isolated Gate Bipolar Transistor (IGBTs) replaced in the Power Electronic components evolution, and describes the IGBT conduction mechanism, presents the parallel association of IGBTs, and studies the application of these components to a Copper Vapour Laser Power Supply. The storage capacitor voltage is 820 volts, the peak current of the solid state switch is 17.000 Amps. The switch is connected on the primary of a step-up transformer, followed by a magnetic modulator. The reset of the magnetic modulator is provided by part of the laser reflected energy with a patented circuit. The charging circuit is a resonant circuit with a charge controlled by an IGBT switch. When the switch is open, the inductance energy is free-wheeled by an additional winding and does not extend the charging phase of the storage capacitor. The design allows the storage capacitor voltage to be very well regulated. This circuit is also patented. The electric pulse in the laser has 30.000 Volt peak voltage, 2000 Amp peak current, and is 200 nanoseconds long, for a 200 Watt optical power Copper Vapour Laser

  5. TIP maker and TIP marker; EB1 as a master controller of microtubule plus ends.

    Science.gov (United States)

    Vaughan, Kevin T

    2005-10-24

    The EB1 protein is a member of the exciting and enigmatic family of microtubule (MT) tip-tracking proteins. EB1 acts as an exquisite marker of dynamic MT plus ends in some cases, whereas in others EB1 is thought to directly dictate the behavior of the plus ends. How EB1 differentiates between these two roles remains unclear; however, a growing list of interactions between EB1 and other MT binding proteins suggests there may be a single mechanism. Adding another layer of complexity to these interactions, two studies published in this issue implicate EB1 in cross-talk between mitotic MTs and between MTs and actin filaments (Goshima et al., p. 229; Wu et al., p. 201). These results raise the possibility that EB1 is a central player in MT-based transport, and that the activity of MT-binding proteins depends on their ability or inability to interact with EB1.

  6. Microprocessor-controlled, programmable ramp voltage generator

    International Nuclear Information System (INIS)

    Hopwood, J.

    1978-11-01

    A special-purpose voltage generator has been developed for driving the quadrupole mass filter of a residual gas analyzer. The generator is microprocessor-controlled with desired ramping parameters programmed by setting front-panel digital thumb switches. The start voltage, stop voltage, and time of each excursion are selectable. A maximum of five start-stop levels may be pre-selected for each program. The ramp voltage is 0 to 10 volts with sweep times from 0.1 to 999.99 seconds

  7. Using EB-QFD to achieve competitive advantages for world class manufacturing

    Directory of Open Access Journals (Sweden)

    Rahman Mostofi

    2012-10-01

    Full Text Available This paper introduces a tool named EB-QFD used for electronic business planning in strategic issues. Nowadays, the challenges of manufacturing sectors for achieving global competition will depend on their speed to change from domestic to world class manufacturing organizations, also the rapid global deployment of electronic business, information technology and their benefits have required managers to make decision, which look for a balance world class manufacturing factors with strategic business goals. To ensure that selected e-business strategies meet world class manufacturing requirements, organizations should simultaneously explore and communicate the relationship between world class manufacturing and electronic business. Electronic business planners can achieve competitive advantages through the implementation of an integration of quality function deployment (QFD with electronic business (EB called EB-QFD. This study is based on data collected from an Iranian auto parts manufacturing company and the implementation of EB-QFD. In this research, EB-QFD contains two parts named EB-WHATs as needs of Electronic Business and EB-HOWs as resources for EB-WHATs. Statistical analysis points that there are positive relationships between using EB-WHATs and EB-HOW and world class manufacturing factors as competitive advantages. We used electronic business systems for EB-WHATs and resource based view (RBV for EB-HOWs.

  8. Limiting parameters of the plasma opening switch

    International Nuclear Information System (INIS)

    Dolgachev, G.I.; Ushakov, A.G.

    2001-01-01

    Implementing programs for nuclear fusion research and X-ray generation requires the creation of superpower generators based on plasma opening switches (POSs) capable of commutating currents as high as several tens of megaamperes at output voltages of up to 5 MV and higher. The physical mechanisms limiting the POS voltage are investigated. It is shown that, as the generator voltage U g increases, the voltage multiplication factor k U POS /U g (where U POS is the POS voltage) decreases. An explanation for such a dependence is proposed, and the maximum value of the POS voltage is estimated. A POS design that enables operating in the above current and voltage ranges is considered. The design is based on applying an external magnetic field to the POS interelectrode gap, increasing the initial generator voltage, and decreasing the linear (along the perimeter of the outer electrode) density of the charge passing through the POS during the conduction phase

  9. Detail study of SiC MOSFET switching characteristics

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage...

  10. Switched-mode power supply apparatus and method

    NARCIS (Netherlands)

    2013-01-01

    The present invention relates to a switched-mode power supply apparatus and a corresponding method. For an effective compensation of non-linearities caused by dead- time and voltage drops in the switching power amplifier of the apparatus, an apparatus is proposed comprising a switching power

  11. Switched-mode power supply apparatus and method

    NARCIS (Netherlands)

    2013-01-01

    The present invention relates to a switched-mode power supply apparatus and a corresponding method. For an effective compensation of non-linearities caused by dead-time and voltage drops in the switching power amplifier of the apparatus, an apparatus is proposed comprising a switching power

  12. The physics of photoconductive spark gap switching : pushing the frontiers

    NARCIS (Netherlands)

    Hendriks, J.

    2006-01-01

    Photoconductive switching of an atmospheric, air-¯lled spark gap by a high-power fem- tosecond laser is a novel approach for switching high voltages into pulses with a very fast rise time (order ps) and almost no shot-to-shot time variation (jitter). Such a switch makes it possible to synchronize

  13. DESAIN DAN IMPLEMENTSI SOFT SWITCHING BOOST KONVERTER DENGAN SIMPLE AUXILLARY RESONANT SWITCH (SARC

    Directory of Open Access Journals (Sweden)

    Dimas Bagus Saputra

    2017-01-01

    Full Text Available Boost konverter merupakan penaik tegangan DC ke tegangan DC yang mempunyai tegangan output yang lebih tinggi dibanding inputnya. Penggunaan boost konverter diera modern semakin meningkat dan dibuat dengan dimensi yang lebih kecil, berat yang lebih ringan dan efisiensi yang lebih tinggi dibanding dengan boost konverter generasi terdahulu. Tetapi rugi-rugi periodik saat on/off meningkat. Untuk meraih kriteria tersebut, teknik hard switching boost konverter berevolusi menjadi teknik soft switching dengan menambah rangkaian simple auxiliary resonant circuit (SARC. Karena penambahan rangkaian SARC tersebut konverter bekerja pada kondisi zero-voltage switching switch (ZVS dan zero current switch (ZCS, sehingga saklar semikonduktor tidak bekerja secara hard switching lagi. Pada penelitian ini akan di desain dan diimplementaskan soft switching boost konverter dengan SARC. Kelebihan dari soft switching boost konverter dengan SARC adalah mempunyai efisiensi yang lebih tinggi dibanding dengan boost konverter konventional. Dari hasil implementasi menunjukkan konverter yang diajukan telah meraih zero voltage switch (ZVS. Sehingga boost konverter zero voltage switch (ZVS bisa diaplikasikan pada sistem power suplay yang membutuhkan efisiensi energi yang tinggi terutama pada daya yang tinggi.

  14. Iaverage current mode (ACM) control for switching power converters

    OpenAIRE

    2014-01-01

    Providing a fast current sensor direct feedback path to a modulator for controlling switching of a switched power converter in addition to an integrating feedback path which monitors average current for control of a modulator provides fast dynamic response consistent with system stability and average current mode control. Feedback of output voltage for voltage regulation can be combined with current information in the integrating feedback path to limit bandwidth of the voltage feedback signal.

  15. Triple voltage dc-to-dc converter and method

    Science.gov (United States)

    Su, Gui-Jia

    2008-08-05

    A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

  16. Energy storage, compression, and switching. Vol. 2

    International Nuclear Information System (INIS)

    Nardi, V.; Bostick, W.H.; Sahlin, H.

    1983-01-01

    This book is a compilation of papers presented at the Second International Conference on Energy Storage, Compression, and Switching, which was held in order to assemble active researchers with a major interest in plasma physics, electron beams, electric and magnetic energy storage systems, high voltage and high current switches, free-electron lasers, and pellet implosion plasma focus. Topics covered include: Slow systems: 50-60 Hz machinery, homopolar generators, slow capacitors, inductors, and solid state switches; Intermediate systems: fast capacitor banks; superconducting storage and switching; gas, vacuum, and dielectric switching; nonlinear (magnetic) switching; imploding liners capacitors; explosive generators; and fuses; and Fast systems: Marx, Blumlein, oil, water, and pressurized water dielectrics; switches; magnetic insulation; electron beams; and plasmas

  17. New surface modification method of bio-titanium alloy by EB polishing

    International Nuclear Information System (INIS)

    Okada, Akira; Uno, Yoshiyuki; Iio, Atsuo; Fujiwara, Kunihiko; Doi, Kenji

    2008-01-01

    A new surface modification for bio-titanium alloy products by electron beam (EB) polishing is proposed. In this EB polishing method, high energy density EB can be irradiated without concentrating the beam. Therefore, large-area EB with a maximum diameter of 60 mm can be used for instantaneously melting or evaporating metal surface. Experimental results made it clear that surface characteristics, such as repellency, corrosion resistance and coefficient of friction could be improved simultaneously with the surface smoothing in a few minutes under a proper condition. Therefore, EB polishing method has a possibility of high efficient surface smoothing and surface modification process for bio-titanium alloy. (author)

  18. A Switched-Capacitor Based High Conversion Ratio Converter for Renewable Energy Applications

    DEFF Research Database (Denmark)

    Li, Kerui; Yin, Zhijian; Yang, Yongheng

    2017-01-01

    A high step-up switched-capacitor based converter is proposed in this paper. The proposed converter features high conversion ratio, low voltage stress and continuous input current, which makes it very suitable for renewable energy applications like photovoltaic systems. More importantly...... voltage gain, low voltage stress on the switches, continuous input current, and relatively high efficiency....

  19. Voltage Control of Antiferromagnetic Phases at Near-Terahertz Frequencies

    Science.gov (United States)

    Barra, Anthony; Domann, John; Kim, Ki Wook; Carman, Greg

    2018-03-01

    A method to control antiferromagnetism using voltage-induced strain is proposed and theoretically examined. Voltage-induced magnetoelastic anisotropy is shown to provide sufficient torque to switch an antiferromagnetic domain 90° either from out of plane to in plane or between in-plane axes. Numerical results indicate that strain-mediated antiferromagnetic switching can occur in an 80-nm nanopatterned disk at frequencies approaching 1 THz but that the switching speed heavily depends on the system's mechanical design. Furthermore, the energy cost to induce magnetic switching is only 450 aJ, indicating that magnetoelastic control of antiferromagnetism is substantially more energy efficient than other approaches.

  20. EB curable wetting resins for magnetic media coatings

    International Nuclear Information System (INIS)

    Laskin, L.; Ansel, R.E.; Murray, K.P.; Schmid, S.R.

    1984-01-01

    The magnetic media industry is studying means to improve the recording density, durability, product uniformity and production efficiency and to reduce wetting agent migration in the magnetic film. The use of electron beam curable resin binders for magnetic coatings is one of the approaches being studied for this. This paper compares the wetting efficiencies of several electron beam curable systems with a conventional resin and a conventional wetting agent. In this study it has been demonstrated that EB resins can be designed to effect proper magnetic pigment dispersion

  1. Engineered barrier systems (EBS): design requirements and constraints

    International Nuclear Information System (INIS)

    2004-01-01

    A joint NEA-EC workshop entitled 'Engineered Barrier Systems: Design Requirements and Constraints' was organised in Turku, Finland on 26-29 August 2003 and hosted by Posiva Oy. The main objectives of the workshop were to promote interaction and collaboration among experts responsible for engineering design and safety assessment in order to develop a greater understanding of how to achieve the integration needed for the successful design of engineered barrier systems, and to clarify the role that an EBS can play in the overall safety case for a repository. These proceedings present the outcomes of this workshop. (author)

  2. EB curing of oxidative-polymerized linseed oil

    International Nuclear Information System (INIS)

    Ju Xuecheng; Ha Hongfei

    2000-01-01

    The properties of EB curing coating films, which were determined by the structure of oxidative-polymerized linseed oil, were as following: good gloss, low hardness, better flexibility and impact resistance, low glass transition temperature and bad adhesion on tinplate. Oxidative-polymerized linseed oil could be used with other compositions not only as oligomer, but also as functional monomer to improve the properties of coating films of composite systems. Both absorbed dose sand Cobaltous naphthenate had little influence on the properties of these coating films

  3. Low voltage arc formation in railguns

    Science.gov (United States)

    Hawke, R.S.

    1985-08-05

    A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

  4. Impact Assessment of Electric Boilers in Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Sinha, Rakesh; Bak-Jensen, Birgitte; Pillai, Jayakrishnan Radhakrishna

    2018-01-01

    Flexibility from the electricity supply, with high share of intermittent energy sources such as wind and solar, has been offered by combined heat and power (CHP) generation in Denmark for decades. There could be periods where the fuel prices are higher than the electricity prices (even -ve), during...... high wind production and is idle for electric boilers (EBs) operation. In the future, using EBs, excess electricity from wind turbines can be effectively utilized for heat production, and still meet the thermal demand by decreasing CHP production. Thus, there is need for demand side flexibility...... control incorporated based on grid voltages, restricts the operation of EBs but ensures operation of the distribution system within limits still trying to keep the thermal comfort in the houses....

  5. EBS/C proton spectra from a virgin diamond crystal

    Energy Technology Data Exchange (ETDEWEB)

    Erich, M., E-mail: marko.erich@gmail.com [Laboratory of Physics, Vinča Institute of Nuclear Sciences, University of Belgrade, PO Box 552, Belgrade (Serbia); Kokkoris, M. [Department of Physics, National Technical University of Athens, Zografou Campus 157 80, Athens (Greece); Fazinić, S. [Laboratory for Ion Beam Interactions, Department of Experimental Physics, Institute Ruđer Bošković, Bijenička cesta 54, 10000 Zagreb (Croatia); Petrović, S. [Laboratory of Physics, Vinča Institute of Nuclear Sciences, University of Belgrade, PO Box 552, Belgrade (Serbia)

    2016-08-15

    In the present work, elastic backscattering channeling spectra, EBS/C, of protons in a 〈1 0 0〉 diamond crystal were experimentally and theoretically studied via a new computer simulation code. Proton incident energies for EBS/C spectra were in the energy range from 1.0 MeV to 1.9 MeV. The energy range was chosen in order to explore a distinct strong resonance of the {sup 12}C(p,p{sub 0}){sup 12}C elastic scattering at 1737 keV. The computer simulation code applied for the fitting of the experimental spectra in the random mode was compared with the corresponding SIMNRA results. In the channeling mode, it assumes a Gompertz type sigmoidal dechanneling function, which has two fitting parameters, x{sub c} and k, the dechanneling range and rate, respectively. It also uses α, ratio of the channeling to random energy losses, as a fitting parameter. It was observed that x{sub c} increases, k decreases and α stays relatively constant with the proton incident energy. These observations confirm the physical interpretation of the fitting parameters. Also, they constitute the basics for the further development of the code for the quantification of induced amorphization and depth profiling of implanted ions.

  6. Effective data compaction algorithm for vector scan EB writing system

    Science.gov (United States)

    Ueki, Shinichi; Ashida, Isao; Kawahira, Hiroichi

    2001-01-01

    We have developed a new mask data compaction algorithm dedicated to vector scan electron beam (EB) writing systems for 0.13 μm device generation. Large mask data size has become a significant problem at mask data processing for which data compaction is an important technique. In our new mask data compaction, 'array' representation and 'cell' representation are used. The mask data format for the EB writing system with vector scan supports these representations. The array representation has a pitch and a number of repetitions in both X and Y direction. The cell representation has a definition of figure group and its reference. The new data compaction method has the following three steps. (1) Search arrays of figures by selecting pitches of array so that a number of figures are included. (2) Find out same arrays that have same repetitive pitch and number of figures. (3) Search cells of figures, where the figures in each cell take identical positional relationship. By this new method for the mask data of a 4M-DRAM block gate layer with peripheral circuits, 202 Mbytes without compaction was highly compacted to 6.7 Mbytes in 20 minutes on a 500 MHz PC.

  7. EB-promoted recycling of waste tire rubber with polyolefins

    International Nuclear Information System (INIS)

    Mészáros, László; Bárány, Tamás; Czvikovszky, Tibor

    2012-01-01

    Despite the fact that more and more methods and solutions are used in the recycling of polymers, there are still some problems, especially in the recycling of cross-linked materials such as rubber. Usually the biggest problem is the lack of compatibility between the cross-linked rubber and the thermoplastic matrix. In this study we applied ground tire rubber (GTR) as recycled material. The GTR was embedded into polyethylene (PE) and polyethylene/ethylene-vinyl acetate copolymer (PE/EVA) matrices. In order to increase the compatibility of the components electron beam (EB) irradiation was applied. The results showed that the irradiation has a beneficial effect on the polymer–GTR interfacial connection. The EB treatment increased not only the tensile strength but also the elongation at break. The irradiation had also positive effect on the impact strength properties. - Highlights: ► In this study ground tire rubber was incorporated into polyethylene (LDPE) matrix. ► Compatibilizing effects of irradiation and ethylene-vinyl acetate were investigated. ► The samples were manufactured by twin-screw extrusion and injection molding. ► Both compatibilizing methods improved the rubber-like properties of the blends. ► This improvement was especially significant when they were applied together.

  8. A High Voltage Swing 1.9 GHz PA in Standard CMOS

    NARCIS (Netherlands)

    Aartsen, W.A.J.; Annema, Anne J.; Nauta, Bram

    2002-01-01

    A circuit technique for RF power amplifiers that reliably handle voltage peaks well above the nominal supply voltage is presented. To achieve this high-voltage tolerance the circuit implements switched-cascode transistors that yield reliable operation for voltages up to 7V at RF frequencies in a

  9. Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

    Science.gov (United States)

    Lin, Bor-Ren

    2018-04-01

    This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

  10. CONTROL OF BOUNCING IN RF MEMS SWITCHES USING DOUBLE ELECTRODE

    KAUST Repository

    Abdul Rahim, Farhan

    2014-05-01

    MEMS based mechanical switches are seen to be the likely replacements for CMOS based switches due to the several advantages that these mechanical switches have over CMOS switches. Mechanical switches can be used in systems under extreme conditions and also provide more reliability and cause less power loss. A major problem with mechanical switches is bouncing. Bouncing is an undesirable characteristic which increases the switching time and causes damage to the switch structure affecting the overall switch life. This thesis proposes a new switch design that may be used to mitigate bouncing by using two voltage sources using a double electrode configuration. The effect of many switch’s tunable parameters is also discussed and an effective tuning technique is also provided. The results are compared to the current control schemes in literature and show that the double electrode scheme is a viable control option.

  11. All-fiber polarization switch

    Science.gov (United States)

    Knape, Harald; Margulis, Walter

    2007-03-01

    We report an all-fiber polarization switch made out of silica-based microstructured fiber suitable for Q-switching all-fiber lasers. Nanosecond high-voltage pulses are used to heat and expand an internal electrode to cause λ/2-polarization rotation in less than 10 ns for 1.5 μm light. The 10 cm long component has an experimentally measured optical insertion loss of 0.2 dB and a 0-10 kHz repetition frequency capacity and has been durability tested for more than 109 pulses.

  12. Switching Characteristics of Ferroelectric Transistor Inverters

    Science.gov (United States)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  13. Surface effects of electrode-dependent switching behavior of resistive random-access memory

    KAUST Repository

    Ke, Jr Jian; Wei, Tzu Chiao; Tsai, Dung Sheng; Lin, Chun-Ho; He, Jr-Hau

    2016-01-01

    of the oxygen chemisorption process was proposed to explain this electrode-dependent switching behavior. The temperature-dependent switching voltage demonstrates that the ReRAM devices fabricated with Pt electrodes have a lower activation energy

  14. Adhesion and interface problems of EB-PVD thermal barrier coatings; Grenzschichtproblematik und Haftung von EB-PVD-Waermedaemmschichtsystemen

    Energy Technology Data Exchange (ETDEWEB)

    Fritscher, K.; Leyens, C. [Deutsche Forschungsanstalt fuer Luft- und Raumfahrt e.V. (DLR), Koeln (Germany). Inst. fuer Werkstoff-Forschung

    1996-12-31

    Loss of adhesion in thermal insulation layers produced by EB-PVD may be caused by surface morphologies or oxide phases resulting from previous process stages, e.g. shot peening, or inappropriate annealing conditions. These undesirable oxide phases are mostly spinels and silicates which pose mechanical problems. Annealing and densification must be modified in order to promote the formation of {alpha}-Al{sub 2}O{sub 3} layers. It may also be possible to avoid certain categories of flaws by changing one material partner (e.g. by using {beta}-NiAl-free adhesive layers). [Deutsch] Die Ursachen der Einbussen der Haftung in WDS-Systemen aus EB-PVD-Fertigung liegen oft in der Ausbildung von Oberflaechenmorphologien oder von Oxidphasen begruendet, die aus den der WDS-Beschichtung vorangehenden Verfahrensschritten wie z.B. des Glasperlstrahlens und von unangemessenen Gluehbedingungen herruehren koennen. Bei diesen unerwuenschten Oxidphasen handelt es sich u.a. um Spinelle und Silikate, die in mechanischer Hinsicht problematisch sind. Glueh- und Verdichtungsroutinen sind entsprechend zu modifizieren, um die Bildung von {alpha}-Al{sub 2}O{sub 3}-Schichten zu foerdern. Moeglicherweise sind gewisse Fehlerkategorien bereits dadurch zu umgehen, dass ein Materialpartner geaendert wird (Beispiel: {beta}-NiAl-freie Haftschichten anwenden). (orig.)

  15. Development of Ground Test System For RKX-200EB

    Science.gov (United States)

    Yudhi Irwanto, Herma

    2018-04-01

    After being postponed for seven years, the development of RKX-200EB now restarts by initiating a ground test, preceding the real flight test. The series of the development starts from simulation test using the real vehicle and its components, focusing on a flight sequence test using hardware in the loop simulation. The result of the simulation shows that the autonomous control system in development is able to control the X tail fin vehicle, since take off using booster, separating booster-sustainer, making flight maneuver using sustainer with average cruise speed of 1000 km/h, and doing bank to maneuver up to ±40 deg heading to the target. The simulation result also shows that the presence of sustainer in vehicle control can expand the distance range by 162% (12.6 km) from its ballistic range using only a booster.

  16. Grid Filter Design for a Multi-Megawatt Medium-Voltage Voltage Source Inverter

    DEFF Research Database (Denmark)

    Rockhill, A.A.; Liserre, Marco; Teodorescu, Remus

    2011-01-01

    This paper describes the design procedure and performance of an LCL grid filter for a medium-voltage neutral point clamped (NPC) converter to be adopted for a multimegawatt wind turbine. The unique filter design challenges in this application are driven by a combination of the medium voltage...... converter, a limited allowable switching frequency, component physical size and weight concerns, and the stringent limits for allowable injected current harmonics. Traditional design procedures of grid filters for lower power and higher switching frequency converters are not valid for a multi......-megawatt filter connecting a medium-voltage converter switching at low frequency to the electric grid. This paper demonstrates a frequency domain model based approach to determine the optimum filter parameters that provide the necessary performance under all operating conditions given the necessary design...

  17. The French methodology for EBS confirmation and demonstration

    International Nuclear Information System (INIS)

    Plas, F.; Voinis, S.; Mayer, S.

    2007-01-01

    The December 30, 1991 French Waste Act entrusted ANDRA, the French national agency for radioactive waste management, with the task of assessing the feasibility of deep geological disposal of high- and medium-level long-lived waste (HLW and ILW, respectively C-waste and B-waste types in French) plus spent fuel (CU in French). In that context, the 'Dossier 2005 Argile' submitted by ANDRA presents the feasibility assessment - with regard to the technical capacity to accommodate all wastes, to reversibility, and to safety - of a radioactive waste disposal in a clay formation studied at the Meuse/Haute-Marne URL. This report was built upon an iterative approach between site characterisation, design, modelling, phenomenological analysis and safety analysis, in which two principles always guided the elaboration of the safety case: the principle of robustness - repository components must maintain their functionality given reasonable solicitations, taking into account uncertainties on the nature and level of these solicitations; and the principle of demonstrability - safety must be verified without requiring complex demonstrations, and based on multiple lines of evidence/argument (numerical simulation, qualitative arguments such as use of natural analogues, experiments and technological demonstrators). In that respect, the EBS definition, demonstration and confirmation of design is a part of the overall safety case. The 'Dossier 2005 Argile' was submitted to three independent peer reviews. The aim. of this article is to present the methodology that ANDRA implemented in the context of 'Dossier 2005 Argile' for defining, demonstrating and confirming the EBS design as well as the future programme with respect with the new Act of 28 June 2006. (author)

  18. Properties of TEM standing waves with E||B

    Science.gov (United States)

    Zaghloul, H.; Buckmaster, H. A.

    This paper summarizes the known properties of E∥B TEM standing waves and shows that for such waves (i) E and B cannot be linearly polarized, (ii) E ≠ αB where α is a constant (iii) it is impossible to find a Lorentz frame where E>B, (iv) direction of the propagation vector cannot be inferred from the fields at one point of the space, (v) their behaviour under Lorentz, parity, time-reversal and gauge transformations is proper, (vi) both Lorentz invariants E2 - B2 and E·B are nonzero, (vii) the magnetic helicity may be nonzero, (viii) the magnetic field may be force-free, and (ix) kμFμv ≠ 0. It also shows how electromagnetic waves can be classified using Lorentz invariants. Cet article résume les qualités connues des ondes stationnaires E∥B TEM et montre que pour des ondes parallèles (i) E et B ne peuvent pas être polarisées linéairement, (ii) E ≠ αB où a est une constante, (iii) il est impossible de trouver une construction de Lorentz où E>B, (iv) la direction de propagation d'un vecteur ne peut pas être déduite des opérations à un point d'intervalle, (v) leur conduite sous Lorentz, parité, temps inverse et transformations de jauge est propre, (vi) les deux invariants de Lorentz E2 - B2 et E·B sont non nulles (vii) l'hélice magnétique peut être non nulle (viii) l'opération magnétique peut être de force libre et (ix) KμFμ v ≠ 0. Ceci montre aussi comment les ondes électromagnétiques peuvent être classifiées, en employant les invariants de Lorentz.

  19. Switching Phenomena

    Science.gov (United States)

    Stanley, H. E.; Buldyrev, S. V.; Franzese, G.; Havlin, S.; Mallamace, F.; Mazza, M. G.; Kumar, P.; Plerou, V.; Preis, T.; Stokely, K.; Xu, L.

    One challenge of biology, medicine, and economics is that the systems treated by these serious scientific disciplines can suddenly "switch" from one behavior to another, even though they possess no perfect metronome in time. As if by magic, out of nothing but randomness one finds remarkably fine-tuned processes in time. The past century has, philosophically, been concerned with placing aside the human tendency to see the universe as a fine-tuned machine. Here we will address the challenge of uncovering how, through randomness (albeit, as we shall see, strongly correlated randomness), one can arrive at some of the many temporal patterns in physics, economics, and medicine and even begin to characterize the switching phenomena that enable a system to pass from one state to another. We discuss some applications of correlated randomness to understanding switching phenomena in various fields. Specifically, we present evidence from experiments and from computer simulations supporting the hypothesis that water's anomalies are related to a switching point (which is not unlike the "tipping point" immortalized by Malcolm Gladwell), and that the bubbles in economic phenomena that occur on all scales are not "outliers" (another Gladwell immortalization).

  20. Radio frequency-assisted fast superconducting switch

    Science.gov (United States)

    Solovyov, Vyacheslav; Li, Qiang

    2017-12-05

    A radio frequency-assisted fast superconducting switch is described. A superconductor is closely coupled to a radio frequency (RF) coil. To turn the switch "off," i.e., to induce a transition to the normal, resistive state in the superconductor, a voltage burst is applied to the RF coil. This voltage burst is sufficient to induce a current in the coupled superconductor. The combination of the induced current with any other direct current flowing through the superconductor is sufficient to exceed the critical current of the superconductor at the operating temperature, inducing a transition to the normal, resistive state. A by-pass MOSFET may be configured in parallel with the superconductor to act as a current shunt, allowing the voltage across the superconductor to drop below a certain value, at which time the superconductor undergoes a transition to the superconducting state and the switch is reset.

  1. Main studies results for introduction of EB machine to Vietnam and for its application

    International Nuclear Information System (INIS)

    Tran, Khac An; Nguyen, Quoc Hien; Le, Hai

    2004-01-01

    Upon the national program on utilization of EB machine for research and development purposes and the FNCA project on application of electron accelerator, as a counterpart the Research and Development Center for Radiation Technology (VINAGAMMA) is preparing technical, manpower and financial conditions for introduction of an EB machine for R and D purposes. The paper offers main studied results in the field of Radiation Processing aimed at putting applications of EB technology into Vietnam and studies on selection of EB machine for R and D purposes in Vietnam. (author)

  2. On The Snubber Influence To The Switching And Conduction Losses In A Converter Using Switched Capacitor

    Directory of Open Access Journals (Sweden)

    Viorel DUGAN

    2002-12-01

    Full Text Available The paper deals to design and to compute the snubber parameters influence on the switching and conduction losses of the transistors (IGBT used as bidirectional switches in a converter with switched capacitor. The converter was modelled with difference equations, and the transistors during turn-on and turn-off processes were simulated by dynamically varying resistance models. The energy loss per switching, commutation time, the variation of the transistor voltage etc. and the influence of snubber parameters in each of these cases are shown in the context of a converter used as a 50Hz reactive power controller unit

  3. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2013-07-03

    Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

  4. Harmonic current interaction at a low voltage customer's installations

    NARCIS (Netherlands)

    Bhattacharyya, S.; Myrzik, J.M.A.; Kling, W.L.; Cobben, J.F.G.; Casteren, van J.

    2009-01-01

    The increased uses of power electronics and switching devices in the electricity network have changed the operational environment of the power system. These devices have nonlinear voltage-current characteristics and produce harmonic currents, and consequently distort the voltage waveform. A low

  5. A high-voltage pulse generator for corona plasma generation

    NARCIS (Netherlands)

    Yan, K.; Heesch, van E.J.M.; Pemen, A.J.M.; Huijbrechts, P.A.H.J.; Gompel, van F.M.; Leuken, van H.E.M.; Matyas, Z.

    2002-01-01

    This paper discusses a high-voltage pulse generator for producing corona plasma. The generator consists of three resonant charging circuits, a transmission line transformer, and a triggered spark-gap switch. Voltage pulses in the order of 30-100 kV with a rise time of 10-20 ns, a pulse duration of

  6. Modular low-voltage electron beams

    International Nuclear Information System (INIS)

    Berejka, A.J.; Avnery, Tovi; Carlson, Carl

    2004-01-01

    Modular, low-voltage systems have simplified electron beam (EB) technology for industrial uses and for research and development. Modular EB units are produced in quantity as sealed systems that are evacuated at the factory eliminating the need for vacuum pumps at the point of use. A simple plug-out--plug-in method of replacement eliminates downtime for servicing. Use of ultra-thin beam windows (<10 μm of titanium foil), solid-state 19 in. (48 cm) rack-mounted power supplies, an innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, combine for ease of use and electrical transfer efficiency at voltages that can be varied between 80 and 150 kV and with high beam currents (up to 40 mA across the 25 cm window). These electron systems are available in three widths, the standard 25 cm and new 5 and 40 cm beams. Traditional uses in the graphic arts and coatings areas as well as uses in surface sterilization have found these compact, lightweight (approximately 15 kg) modular beams of interest. Units have been configured around complex shapes to enable three-dimensional surface curing (as for coatings on aluminum tubing) to be achieved at high production rates. Details of the beam construction and some industrial uses are discussed

  7. Modular low-voltage electron beams

    Science.gov (United States)

    Berejka, Anthony J.; Avnery, Tovi; Carlson, Carl

    2004-09-01

    Modular, low-voltage systems have simplified electron beam (EB) technology for industrial uses and for research and development. Modular EB units are produced in quantity as sealed systems that are evacuated at the factory eliminating the need for vacuum pumps at the point of use. A simple plug-out—plug-in method of replacement eliminates downtime for servicing. Use of ultra-thin beam windows (innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, combine for ease of use and electrical transfer efficiency at voltages that can be varied between 80 and 150 kV and with high beam currents (up to 40 mA across the 25 cm window). These electron systems are available in three widths, the standard 25 cm and new 5 and 40 cm beams. Traditional uses in the graphic arts and coatings areas as well as uses in surface sterilization have found these compact, lightweight (approximately 15 kg) modular beams of interest. Units have been configured around complex shapes to enable three-dimensional surface curing (as for coatings on aluminum tubing) to be achieved at high production rates. Details of the beam construction and some industrial uses are discussed.

  8. Voltage regulating circuit

    NARCIS (Netherlands)

    2005-01-01

    A voltage regulating circuit comprising a rectifier (2) for receiving an AC voltage (Vmains) and for generating a rectified AC voltage (vrec), and a capacitor (3) connected in parallel with said rectified AC voltage for providing a DC voltage (VDC) over a load (5), characterized by a unidirectional

  9. Microwave pulse generation by photoconductive switching

    Energy Technology Data Exchange (ETDEWEB)

    Pocha, M.D.; Druce, R.L.

    1989-03-14

    Laser activated photoconductive semiconductor switching shows significant potential for application in high power microwave generation. Primary advantages of this concept are: small size, light weight, ruggedness, precise timing and phasing by optical control, and the potential for high peak power in short pulses. Several concepts have been suggested for microwave generation using this technology. They generally fall into two categories (1) the frozen wave generator or (2) tuned cavity modulation, both of which require only fast closing switches. We have been exploring a third possibility requiring fast closing and opening switches, that is the direct modulation of the switch at microwave frequencies. Switches have been fabricated at LLNL using neutron irradiated Gallium Arsenide which exhibit response times as short as 50 ps at low voltages. We are in the process of performing high voltage tests. So far, we have been able to generate 2.4 kV pulses with approximately 340 ps response time (FWHM) using approximately a 200..mu..J optical pulse. Experiments are continuing to increase the voltage and improve the switching efficiency. 3 refs., 6 figs.

  10. Microwave pulse generation by photoconductive switching

    Science.gov (United States)

    Pocha, M. D.; Druce, R. L.

    1989-03-01

    Laser activated photoconductive semiconductor switching shows significant potential for application in high power microwave generation. Primary advantages of this concept are: small size, light weight, ruggedness, precise timing and phasing by optical control, and the potential for high peak power in short pulses. Several concepts have been suggested for microwave generation using this technology. They generally fall into two categories: (1) the frozen wave generator, or (2) tuned cavity modulation, both of which require only fast closing switches. We have been exploring a third possibility requiring fast closing and opening switches, that is the direct modulation of the switch at microwave frequencies. Switches have been fabricated at LLNL using neutron irradiated Gallium Arsenide which exhibit response times as short as 50 ps at low voltages. We are in the process of performing high voltage tests. So far, we have been able to generate 2.4 kV pulses with approximately 340 ps response time (FWHM) using approximately a 200 microJ optical pulse. Experiments are continuing to increase the voltage and improve the switching efficiency.

  11. EDITORIAL: Molecular switches at surfaces Molecular switches at surfaces

    Science.gov (United States)

    Weinelt, Martin; von Oppen, Felix

    2012-10-01

    electron-vibration coupling in transport through single moleculesKatharina J Franke and Jose Ignacio Pascual Vibrational heating in single-molecule switches: an energy-dependent density-of-states approachT Brumme, R Gutierrez and G Cuniberti Reversible switching of single tin phthalocyanine molecules on the InAs(111)A surfaceC Nacci, K Kanisawa and S Fölsch Tuning the interaction between carbon nanotubes and dipole switches: the influence of the change of the nanotube-spiropyran distanceP Bluemmel, A Setaro, C Maity, S Hecht and S Reich Carbon nanotubes as substrates for molecular spiropyran-based switchesE Malic, A Setaro, P Bluemmel, Carlos F Sanz-Navarro, Pablo Ordejón, S Reich and A Knorr Ultrafast dynamics of dithienylethenes differently linked to the surface of TiO2 nanoparticlesLars Dworak, Marc Zastrow, Gehad Zeyat, Karola Rück-Braun and Josef Wachtveitl Switching the electronic properties of Co-octaethylporphyrin molecules on oxygen-covered Ni films by NO adsorptionC F Hermanns, M Bernien, A Krüger, J Miguel and W Kuch STM-switching of organic molecules on semiconductor surfaces: an above threshold density matrix model for 1,5 cyclooctadiene on Si(100)K Zenichowski, Ch Nacci, S Fölsch, J Dokić, T Klamroth and P Saalfrank A switch based on self-assembled thymineFatih Kalkan, Michael Mehlhorn and Karina Morgenstern The growth and electronic structure of azobenzene-based functional molecules on layered crystalsJ Iwicki, E Ludwig, J Buck, M Kalläne, F Köhler, R Herges, L Kipp and K Rossnagel Voltage-dependent conductance states of a single-molecule junctionY F Wang, N Néel, J Kröger, H Vázquez, M Brandbyge, B Wang and R Berndt Molecules with multiple switching units on a Au(111) surface: self-organization and single-molecule manipulationJohannes Mielke, Sofia Selvanathan, Maike Peters, Jutta Schwarz, Stefan Hecht and Leonhard Grill Preparing and regulating a bi-stable molecular switch by atomic manipulationS Sakulsermsuk, R E Palmer and P A Sloan Mixed self

  12. Characterization of a low-voltage electron beam

    International Nuclear Information System (INIS)

    Berejka, A.J.

    2004-01-01

    Growing interests in low-voltage electron beam (EB) processing in areas that may require regulatory compliance, such as the curing of inks and coatings for food packaging materials and in the surface disinfection of medicinal and food containers, lead to the characterization of a low-voltage EB by two methods: a widely used thin radiochromic film and a film strip made on a continuous basis with an alanine coating. Using a laboratory unit, beam currents and voltages were varied and then optical density and alanine/matrix ratios were, respectively, determined. No inferences as to 'dose' were made. The radiochromic film was found to be insensitive to slight changes at low beam currents and to show considerable divergence and a broadening in response as current was increased across a meaningful range at the three applied beam voltages of 80, 100 and 120 kV. The electron paramagnetic resonance (EPR) increase in response of the alanine coated film taken as a ratio to an internal reference material within the test instrument itself was shown to have a linear response with respect to beam current and no divergence as current increased. The use of an alanine coating of thickness greater than that of the extrapolated range of the electron penetration offers a method for the characterization of the output of such very low-voltage beams

  13. Voltage gating of mechanosensitive PIEZO channels.

    Science.gov (United States)

    Moroni, Mirko; Servin-Vences, M Rocio; Fleischer, Raluca; Sánchez-Carranza, Oscar; Lewin, Gary R

    2018-03-15

    Mechanosensitive PIEZO ion channels are evolutionarily conserved proteins whose presence is critical for normal physiology in multicellular organisms. Here we show that, in addition to mechanical stimuli, PIEZO channels are also powerfully modulated by voltage and can even switch to a purely voltage-gated mode. Mutations that cause human diseases, such as xerocytosis, profoundly shift voltage sensitivity of PIEZO1 channels toward the resting membrane potential and strongly promote voltage gating. Voltage modulation may be explained by the presence of an inactivation gate in the pore, the opening of which is promoted by outward permeation. Older invertebrate (fly) and vertebrate (fish) PIEZO proteins are also voltage sensitive, but voltage gating is a much more prominent feature of these older channels. We propose that the voltage sensitivity of PIEZO channels is a deep property co-opted to add a regulatory mechanism for PIEZO activation in widely different cellular contexts.

  14. The TT, TB, EB and BB correlations in anisotropic inflation

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xingang [Department of Physics, The University of Texas at Dallas, Richardson, TX 75083 (United States); Emami, Razieh [School of Physics, Institute for Research in Fundamental Sciences (IPM), P. O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Firouzjahi, Hassan [School of Astronomy, Institute for Research in Fundamental Sciences (IPM), P. O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Wang, Yi, E-mail: Xingang.Chen@utdallas.edu, E-mail: emami@ipm.ir, E-mail: firouz@ipm.ir, E-mail: yw366@cam.ac.uk [Centre for Theoretical Cosmology, DAMTP, University of Cambridge, Cambridge CB3 0WA (United Kingdom)

    2014-08-01

    The ongoing and future experiments will measure the B-mode from different sky coverage and frequency bands, with the potential to reveal non-trivial features in polarization map. In this work we study the TT, TB, EB and BB correlations associated with the B-mode polarization of CMB map in models of charged anisotropic inflation. The model contains a chaotic-type large field complex inflaton which is charged under the U(1) gauge field. We calculate the statistical anisotropies generated in the power spectra of the curvature perturbation, the tensor perturbation and their cross-correlation. It is shown that the asymmetry in tensor power spectrum is a very sensitive probe of the gauge coupling. While the level of statistical anisotropy in temperature power spectrum can be small and satisfy the observational bounds, the interactions from the gauge coupling can induce large directional dependence in tensor modes. This will leave interesting anisotropic fingerprints in various correlations involving the B-mode polarization such as the TB cross-correlation which may be detected in upcoming Planck polarization data. In addition, the TT correlation receives an anisotropic contribution from the tensor sector which naturally decays after l ∼> 100. We expect that the mechanism of using tensor sector to induce asymmetry at low l to be generic which can also be applied to address other low l CMB anomalies.

  15. IGBT Dynamic Loss Reduction through Device Level Soft Switching

    Directory of Open Access Journals (Sweden)

    Lan Ma

    2018-05-01

    Full Text Available Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT is widely used in high power applications. However, its switching frequency is generally low because of relatively large switching losses. Silicon carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET is much more superior due to their fast switching speed, which is determined by the internal parasitic capacitance instead of the stored charges, like the IGBT. By the combination of SiC MOSFET and Si IGBT, this paper presents a novel series hybrid switching method to achieve IGBT’s dynamic switching loss reduction by switching under Zero Voltage Hard Current (ZVHC turn-on and Zero Current Hard Voltage (ZCHV turn-off conditions. Both simulation and experimental results of IGBT are carried out, which shows that the soft switching of IGBT has been achieved both in turn-on and turn-off period. Thus 90% turn-on loss and 57% turn-off loss are reduced. Two different IGBTs’ test results are also provided to study the modulation parameter’s effect on the turn-off switching loss. Furthermore, with the consideration of voltage and current transient states, a new soft switching classification is proposed. At last, another improved modulation and Highly Efficient and Reliable Inverter Concept (HERIC inverter are given to validate the effectiveness of the device level hybrid soft switching method application.

  16. Modeling and analysis of the Rimfire gas switch

    International Nuclear Information System (INIS)

    Gahl, John M.; Kemp, Mark A.; Struve, Kenneth William; Curry, Randy D.; McDonald, Ken F.

    2005-01-01

    Many accelerators at Sandia National Laboratories utilize the Rimfire gas switch for high-voltage, high-power switching. Future accelerators will have increased performance requirements for switching elements. When designing improved versions of the Rimfire switch, there is a need for quick and accurate simulation of the electrical effects of geometry changes. This paper presents an advanced circuit model of the Rimfire switch that can be used for these simulations. The development of the model is shown along with comparisons to past models and experimental results.

  17. A technique to reduce plasma armature formation voltage

    International Nuclear Information System (INIS)

    Jamison, K.A.; Littrell, D.M.

    1991-01-01

    The initiation of a plasma armature by foil vaporization in a railgun is often accompanied by a large, fast, voltage transient appearing on both the breech and muzzle of the gun. For a railgun driven by an inductor/opening switch power supply, this voltage transient becomes a concern during current commutation from the switch to the railgun. To lessen the requirements on the opening switch, techniques must be found to reduce the armature formation voltage. This paper presents the experimental results from railgun firings at AFATL's Electromagnetic Launcher Basic Research Facility (Site A-15, Eglin Air Force Base, Florida) using different shapes of initiation foils. These foils have been designed to vaporize into a plasma armature with reduced transient voltages. A design criteria was developed to ensure that all portions of the foil vaporize at slightly different times

  18. Structure and characteristics of EB-PVD thermal insulation layers; Struktur und Eigenschaften von EB-PVD-Waermedaemmschichten

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, U. [Deutsche Forschungsanstalt fuer Luft- und Raumfahrt e.V. (DLR), Koeln (Germany). Inst. fuer Werkstoff-Forschung

    1996-12-31

    Thermal insulation layers for guide blades and rotor blades in the first two stages of a high-pressure turbines are produced by electron-beam physical vapour deposition for maximum quality. The layers have a lifetime that is longer by a factor of 2 to 10 than for plasma-sprayed layers. The following characteristics of the ceramic layer have a decisive influence on the life of the composite system: Phase composition, distribution and stability, microstructure, density, thickness, crack distribution and cohesive strength. Some selected aspects of the interdependence between production parameters, microstructure of the thermal insulation layer and service life are gone into. [Deutsch] Zur Herstellung von Waermedaemmschichten (WDS) fuer Turbinenleit- und Laufschaufeln der ersten beiden Stufen in der Hochdruckturbine wird fuer hoechste Ansprueche an die Schichtqualitaet das EB-PDV-Verfahren (electron-beam physical vapour deposition) eingesetzt. Die Lebensdauer dieser Schichten ist um den Faktor 2 bis 10 besser als beim Plasmaspritzen. Bei der keramischen Waermedaemmschicht selbst beeinflussen folgende Eigenschaften die Lebensdauer des Gesamtschichtsystems nachhaltig: Phasenzusammensetzung, -verteilung und -stabilitaet, Mikrogefuege, Dichte, Dicke, Rissverteilung und kohaesive Festigkeit. Auf einige ausgewaehlt Aspekte des Zusammenhangs zwischen Herstellungsparametern, Mikrostruktur der Waermedaemmschicht und Lebensdauer wird kurz eingegangen. (orig.)

  19. A solid-state dielectric elastomer switch for soft logic

    Energy Technology Data Exchange (ETDEWEB)

    Chau, Nixon [Biomimetics Laboratory, Auckland Bioengineering Institute, The University of Auckland, Level 6, 70 Symonds Street, Auckland 1010 (New Zealand); Slipher, Geoffrey A., E-mail: geoffrey.a.slipher.civ@mail.mil; Mrozek, Randy A. [U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States); O' Brien, Benjamin M. [StretchSense, Ltd., 27 Walls Rd., Penrose, Auckland 1061 (New Zealand); Anderson, Iain A. [Biomimetics Laboratory, Auckland Bioengineering Institute, The University of Auckland, Level 6, 70 Symonds Street, Auckland 1010 (New Zealand); StretchSense, Ltd., 27 Walls Rd., Penrose, Auckland 1061 (New Zealand); Department of Engineering Science, School of Engineering, The University of Auckland, Level 3, 70 Symonds Street, Auckland 1010 (New Zealand)

    2016-03-07

    In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease of manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.

  20. A solid-state dielectric elastomer switch for soft logic

    International Nuclear Information System (INIS)

    Chau, Nixon; Slipher, Geoffrey A.; Mrozek, Randy A.; O'Brien, Benjamin M.; Anderson, Iain A.

    2016-01-01

    In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease of manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.

  1. Reactive Transport and Coupled THM Processes in Engineering Barrier Systems (EBS)

    International Nuclear Information System (INIS)

    Steefel, Carl; Rutqvist, Jonny; Tsang, Chin-Fu; Liu, Hui-Hai; Sonnenthal, Eric; Houseworth, Jim; Birkholzer, Jens

    2010-01-01

    Geological repositories for disposal of high-level nuclear wastes generally rely on a multi-barrier system to isolate radioactive wastes from the biosphere. The multi-barrier system typically consists of a natural barrier system, including repository host rock and its surrounding subsurface environment, and an engineering barrier system (EBS). EBS represents the man-made, engineered materials placed within a repository, including the waste form, waste canisters, buffer materials, backfill and seals (OECD, 2003). EBS plays a significant role in the containment and long-term retardation of radionuclide release. EBS is involved in complex thermal, hydrogeological, mechanical, chemical and biological processes, such as heat release due to radionuclide decay, multiphase flow (including gas release due to canister corrosion), swelling of buffer materials, radionuclide diffusive transport, waste dissolution and chemical reactions. All these processes are related to each other. An in-depth understanding of these coupled processes is critical for the performance assessment (PA) for EBS and the entire repository. Within the EBS group of Used Fuel Disposition (UFD) Campaign, LBNL is currently focused on (1) thermal-hydraulic-mechanical-chemical (THMC) processes in buffer materials (bentonite) and (2) diffusive transport in EBS associated with clay host rock, with a long-term goal to develop a full understanding of (and needed modeling capabilities to simulate) impacts of coupled processes on radionuclide transport in different components of EBS, as well as the interaction between near-field host rock (e.g., clay) and EBS and how they effect radionuclide release. This final report documents the progress that LBNL has made in its focus areas. Specifically, Section 2 summarizes progress on literature review for THMC processes and reactive-diffusive radionuclide transport in bentonite. The literature review provides a picture of the state-of-the-art of the relevant research areas

  2. Reactive Transport and Coupled THM Processes in Engineering Barrier Systems (EBS)

    Energy Technology Data Exchange (ETDEWEB)

    Steefel, Carl; Rutqvist, Jonny; Tsang, Chin-Fu; Liu, Hui-Hai; Sonnenthal, Eric; Houseworth, Jim; Birkholzer, Jens

    2010-08-31

    Geological repositories for disposal of high-level nuclear wastes generally rely on a multi-barrier system to isolate radioactive wastes from the biosphere. The multi-barrier system typically consists of a natural barrier system, including repository host rock and its surrounding subsurface environment, and an engineering barrier system (EBS). EBS represents the man-made, engineered materials placed within a repository, including the waste form, waste canisters, buffer materials, backfill and seals (OECD, 2003). EBS plays a significant role in the containment and long-term retardation of radionuclide release. EBS is involved in complex thermal, hydrogeological, mechanical, chemical and biological processes, such as heat release due to radionuclide decay, multiphase flow (including gas release due to canister corrosion), swelling of buffer materials, radionuclide diffusive transport, waste dissolution and chemical reactions. All these processes are related to each other. An in-depth understanding of these coupled processes is critical for the performance assessment (PA) for EBS and the entire repository. Within the EBS group of Used Fuel Disposition (UFD) Campaign, LBNL is currently focused on (1) thermal-hydraulic-mechanical-chemical (THMC) processes in buffer materials (bentonite) and (2) diffusive transport in EBS associated with clay host rock, with a long-term goal to develop a full understanding of (and needed modeling capabilities to simulate) impacts of coupled processes on radionuclide transport in different components of EBS, as well as the interaction between near-field host rock (e.g., clay) and EBS and how they effect radionuclide release. This final report documents the progress that LBNL has made in its focus areas. Specifically, Section 2 summarizes progress on literature review for THMC processes and reactive-diffusive radionuclide transport in bentonite. The literature review provides a picture of the state-of-the-art of the relevant research areas

  3. Isolated and soft-switched power converter

    Science.gov (United States)

    Peng, Fang Zheng; Adams, Donald Joe

    2002-01-01

    An isolated and soft-switched power converter is used for DC/DC and DC/DC/AC power conversion. The power converter includes two resonant tank circuits coupled back-to-back through an isolation transformer. Each resonant tank circuit includes a pair of resonant capacitors connected in series as a resonant leg, a pair of tank capacitors connected in series as a tank leg, and a pair of switching devices with anti-parallel clamping diodes coupled in series as resonant switches and clamping devices for the resonant leg. The power converter is well suited for DC/DC and DC/DC/AC power conversion applications in which high-voltage isolation, DC to DC voltage boost, bidirectional power flow, and a minimal number of conventional switching components are important design objectives. For example, the power converter is especially well suited to electric vehicle applications and load-side electric generation and storage systems, and other applications in which these objectives are important. The power converter may be used for many different applications, including electric vehicles, hybrid combustion/electric vehicles, fuel-cell powered vehicles with low-voltage starting, remote power sources utilizing low-voltage DC power sources, such as photovoltaics and others, electric power backup systems, and load-side electric storage and generation systems.

  4. Morphological control and polarization switching in polymer ...

    Indian Academy of Sciences (India)

    Liquid crystals dispersed in polymer systems constitute novel class of optical materials. The precise ... Polymer dispersed liquid crystals; nematic liquid crystal; ferroelectric liquid crystal; viscosity; drop- ... threshold voltage and the switching speed of the resulting ... crystal droplet size distribution and uniformity can be.

  5. Microprocessor Controlled Capacitor Bank Switching System for ...

    African Journals Online (AJOL)

    In this work, analysis and development of a microprocessor controlled capacitor bank switching system for deployment in a smart distribution network was carried out. This system was implemented by the use of discreet components such as resistors, capacitors, transistor, diode, automatic voltage regulator, with the ...

  6. A Bidirectional Multi-Port DC-DC Converter Integrating Voltage Equalizer

    DEFF Research Database (Denmark)

    Chen, Jianfei; Hou, Shiying; Deng, Fujin

    2015-01-01

    A novel bidirectional multi-port dc-dc converter integrating voltage equalizer based on switched-capacitor voltage accumulator (SCVA) is proposed. It has two operating modes of charging and discharging for battery modules. All battery modules are connected in series indirectly and can be equalize...... battery modules with different voltages. Simulation results has shown the feasibility of the proposed converter.......A novel bidirectional multi-port dc-dc converter integrating voltage equalizer based on switched-capacitor voltage accumulator (SCVA) is proposed. It has two operating modes of charging and discharging for battery modules. All battery modules are connected in series indirectly and can be equalized...

  7. A microcontroller with 96% power-conversion efficiency using stacked voltage domains

    NARCIS (Netherlands)

    Blutman, K.; Kapoor, A.; Majumdar, A.; Martinez, J.G.; Echeverri, J.; Sevat, L.; Van Der Wel, A.; Fatemi, H.; Pineda de Gyvez, J.; Makinwa, K.

    2016-01-01

    This paper presents a CMOS 40nm microcontroller where for the first time, stacked voltage domains are used. The system features an ARM Cortex M0+ processor, 4kB ROM, 16kB SRAM, peripherals, and an on-chip switched-capacitor voltage regulator (SCVR). By using voltage stacking the test chip achieves

  8. A new soft switched push pull current fed converter for fuel cell applications

    International Nuclear Information System (INIS)

    Delshad, Majid; Farzanehfard, Hosein

    2011-01-01

    In this paper a new zero voltage switching current fed push pull dc-dc converter is proposed for fuel cell generation system. The auxiliary circuit in this converter, not only absorbs the voltage surge across the switches at turn off instance, but also provides zero voltage switching condition for all converter switches. Therefore, the converter efficiency is increased and size and weight of the converter can be decreased. Also implementation of control circuit is very simple since the converter is PWM controlled. In this paper, the proposed dc-dc converter operating modes are analyzed and to verify the converter operation a laboratory prototype is implemented and the experimental results are presented.

  9. Low prepulse, high power density water dielectric switching

    International Nuclear Information System (INIS)

    Johnson, D.L.; VanDevender, J.P.; Martin, T.H.

    1979-01-01

    Prepulse voltage suppression has proven difficult in high power, high voltage accelerators employing self-breakdown water dielectric switches. A novel and cost effective water switch has been developed at Sandia Laboratories which reduces prepulse voltage by reducing the capacity across the switch. This prepulse suppression switch causes energy formerly stored in the switch capacity and dissipated in the arc to be useful output energy. The switching technique also allows the pulse forming lines to be stacked in parallel and electrically isolated from the load after the line has been discharged. The switch consists of a ground plane, with several holes, inserted between the switch electrodes. The output line switch electrodes extend through the holes and face electrodes on the pulse forming line (PFL). The capacity between the PFL and the output transmission line is reduced by about 80%. The gap spacing between the output line electrode and the hole in the ground plane is adjusted so that breakdown occurs after the main pulse and provides a crow bar between the load and the source. Performance data from the Proto II, Mite and Ripple test facilities are presented

  10. Plasma opening switch with extrinsic magnetic field

    CERN Document Server

    Dolgachev, G; Maslennikov, D

    2001-01-01

    Summary form only given, as follows. We have demonstrated in series of experiments that plasma opening switch (POS) switching voltage (UPOS) is defined by energy density (w) deposited in the POS plasma. If we then consider a plasma erosion mainly responsible for the effect of POS switching (the erosion effect could be described by Hall or Child-Langmuir models) the energy density (w) could be measured as a function of a system "macro-parameter" such as the initial charging voltage of the capacity storage system (the Marx pulsed voltage generator) UMarx. The POS voltage in this case could be given by UPOS"aw=aUMarx4/7, where a is a constant. This report demonstrates that for the high-impedance POS which has limited charge density transferred through the POS plasma a"2.5 (MV3/7) with no external magnetic field applied. The use of the extrinsic magnetic field allows to increase a up to 3.6 (MV3/7) and to achieve higher voltages at the opening phase - UPOS=3.6UMarx4/7. To verify this approach set of experimental ...

  11. Near field and altered zone environmental report Volume I: technical bases for EBS design

    Energy Technology Data Exchange (ETDEWEB)

    Wilder, D. G., LLNL

    1997-08-01

    This report presents an updated summary of results for the waste package (WP) and engineered barrier system (EBS) evaluations, including materials testing, waste-form characterization, EBS performance assessments, and near-field environment (NFE) characterization. Materials testing, design criteria and concept development, and waste-form characterization all require an understanding of the environmental conditions that will interact with the WP and EBS. The Near-Field Environment Report (NFER) was identified in the Waste Package Plan (WPP) (Harrison- Giesler, 1991) as the formal means for transmitting and documenting this information.

  12. Full-scale demonstration of EBS construction technology II. Design, manufacturing and transportation of pre-fabricated EBS module (PEM)

    International Nuclear Information System (INIS)

    Asano, Hidekazu; Toguri, Satohito; Iwata, Yumiko; Kawakami, Susumu; Nagasawa, Yuji; Yoshida, Takeshi

    2008-01-01

    PEM was investigated as a full-scale demonstration for the design, manufacturing and construction by using simulated buffer material and overpack in consideration of horizontal emplacement. Also near full-scale tests were conducted to examine the applicability of air-bearing system which can be used to transport a heavy load at the drift tunnel as for PEM. With regard to PEM casing, design requirements were selected from the viewpoints of EBS performance and operation safety issues. The construction procedure was examined in consideration of the shapes of buffer material, which are previously positioned inside the casing. And design procedure of the casing was also examined and presented. A full-scale PEM casing as a longitudinally two-part divided cylinder type with connection flanges was manufactured by using carbon steel plate. The wall thickness of this non-leak tight type PEM casing was evaluated its mechanical integrity by 2-dimensional stress analysis in consideration of the emplacement condition on the drift tunnel basement. Mechanical integrity of a percolated type casing was also examined its mechanical integrity. Air-bearing unit, which originally apply to a flat/smooth surface, was modified to fit a curved surface of the drift tunnel. Two units were aligned with two parallel lines, which estimate to be able to lift 12 tons, about two-fifth of the total weight of full scale PEM. On the conducted transportation tests of the air-bearing units, considering the surface roughness of the drift tunnel, especially for its unevenness, capability and availability of the run-over such gaps were investigated. And effect of covering sheets which can improve the gapped surface into relatively smooth was also examined by using several candidate materials. Through these tests, combination of the covering sheets and the maximum available height difference were evaluated and identified. Also the maximum traction force to toe the loading was measured to design the air

  13. Evaluation of the PetrifilmTM EB and TEMPO® EB systems with ISO 21528-2:2004 method for the count of Enterobacteriaceae in milk

    Directory of Open Access Journals (Sweden)

    Andréia Cirolini

    2013-09-01

    Full Text Available The development of alternative microbiological techniques is driven by the necessity to meet the current needs to deliver rapid results in the manufacturing process of foods, but it is important that these methods be evaluated for each application. The objective of the present study was to assess the PetrifilmTM EB and the TEMPO® EB systems with ISO 21528-2:2004 for the count of Enterobacteriaceae in pasteurized and UHT milk samples. We analyzed the microflora of 141 pasteurized milk samples, 15 samples of artificially contaminated pasteurized milk and 15 samples of artificially contaminated UHT milk. Investigation of the method PetrifilmTM EB and ISO 21528:2 regression analysis showed a high correlation in the samples, r = 0.90 for the microflora of pasteurized milk, r = 0.98 for artificially contaminated pasteurized milk and r = 0.99 for the artificially contaminated UHT milk. In evaluating the system TEMPO EB ® method and ISO 21528:2 correlation was also significant in the analyzed samples, with r = 0.86 for the microflora of pasteurized milk, r = 0.96 for artificially contaminated pasteurized milk and r = 0.99 for artificially contaminated UHT milk. No statistically significant differences were observed between the three methods conducted to analyze artificially contaminated pasteurized and UHT milk at three inoculum levels. In conclusion, the PetrifilmTM EB system and the TEMPO® EB system may be an alternative to the ISO 21528-2:2004 for the Enterobacteriaceae assay for milk as because of the ease-of-operation and the time reduction achieved for conducting the microbiological assay using these systems.

  14. A nanoscale piezoelectric transformer for low-voltage transistors.

    Science.gov (United States)

    Agarwal, Sapan; Yablonovitch, Eli

    2014-11-12

    A novel piezoelectric voltage transformer for low-voltage transistors is proposed. Placing a piezoelectric transformer on the gate of a field-effect transistor results in the piezoelectric transformer field-effect transistor that can switch at significantly lower voltages than a conventional transistor. The piezoelectric transformer operates by using one piezoelectric to squeeze another piezoelectric to generate a higher output voltage than the input voltage. Multiple piezoelectrics can be used to squeeze a single piezoelectric layer to generate an even higher voltage amplification. Coupled electrical and mechanical modeling in COMSOL predicts a 12.5× voltage amplification for a six-layer piezoelectric transformer. This would lead to more than a 150× reduction in the power needed for communications.

  15. Practical and safe implementation of disposal with prefabricated EBS modules

    International Nuclear Information System (INIS)

    Kawamura, Hideki; McKinley, Ian G.; Neall, Fiona B.

    2008-01-01

    The use of prefabricated EBS modules ('PEMs') to minimise the problems involved with handling compacted bentonite and ensuring that it is emplaced to established quality levels has been investigated in various national programmes for disposal of both HLW and SF. To date, however, this has tended to be decoupled from studies of related operational aspects such as assessing / minimising the consequences of use of concrete for support structures, ensuring ease of tele-operated reversal of waste packages during emplacement (e.g. in the event of operational disturbances) / retrieval at a later time, logistical optimisation (especially for programmes with large waste inventories) and cost minimisation. It is clear that specific aspects of operational safety and practicality can be considerably enhanced if designs are modified with a focus on them. It is trickier to provide optimised solutions, which simultaneously address all these critical points. Nevertheless, with a bit of lateral thinking, it appears possible to devise options that may not only ease the operational phase, but may also actually improve post-closure safety case robustness - although improved, more realistic performance assessment codes and databases will be needed to demonstrate this rigorously. To illustrate this approach, an example will be presented based of disposal of vitrified HLW in a fractured hard rock; the general principles involved are, however, also applicable to other higher activity wastes and other host rocks. Key aspects of the design are: Optimisation of PEM design for both short-term and long-term performance; Development of a rail emplacement system which eases remote handled emplacement / recovery; Large diameter, lined emplacement tunnels to ensure operational robustness; Use of multi-package overpacks (e.g. 6 HLW containers in each PEM) and short tunnels to ease emplacement logistics; and Backfilling with a non-swelling sacrificial pH buffer (eases handling and improves

  16. Towards energy efficient climate control in storage of tulip bulbs. Pilot EB-01; Naar een energiezuiniger klimaatbeheersing bij de bewaring van tulpenbollen. Praktijkproef EB-01

    Energy Technology Data Exchange (ETDEWEB)

    Gude, H.; Dijkema, M.

    2005-09-15

    The aim of this project is to enable energy conservation in the storage of tulip bulbs. To this end, it should be examined if the agent EB-01 (1-methylcycloprene, a protection agent for plants) can be used in practical cells that are not entirely leak proof and if it offers sufficient protection against ethylene damage [Dutch] Doel van dit project is om energiebesparing bij de bewaring van tulpenbollen mogelijk te maken. Om dat te realiseren wordt onderzocht of het middel EB-01 (1- methylcyclopropeen, een beschermingsmiddel voor planten) toepasbaar is in niet volledig lekdichte praktijkcellen en voldoende bescherming tegen ethyleenschade biedt.

  17. Single Switch Nonisolated Ultra-Step-Up DC-DC Converter with an Integrated Coupled Inductor for High Boost Applications

    DEFF Research Database (Denmark)

    Siwakoti, Yam P.; Blaabjerg, Frede

    2017-01-01

    This paper introduces a new single-switch nonisolated dc-dc converter with very high voltage gain and reduced semiconductor voltage stress. The converter utilizes an integrated autotransformer and a coupled inductor on the same core in order to achieve a very high voltage gain without using extreme...... duty cycle. Furthermore, a passive lossless clamp circuit recycles the leakage energy of the coupled magnetics and alleviates the voltage spikes across the main switch. This feature along with low stress on the switching device enables the designer to use a low voltage and low RDS-on MOSFET, which...

  18. Intrinsic nanofilamentation in resistive switching

    KAUST Repository

    Wu, Xing

    2013-03-15

    Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.

  19. Current and future market of UV/EB curing in Thailand

    International Nuclear Information System (INIS)

    Suda Kiatkamjornwong; Aran Hanseubsai

    1999-01-01

    Current status and future market of UV/EB curing in Thailand were presented. Included number of printing houses, export, main export market and the role of radiation curing in printing and packaging industries of Thailand

  20. Post-irradiation mechanical tests on F82H EB and TIG welds

    International Nuclear Information System (INIS)

    Rensman, J.; Osch, E.V. van; Horsten, M.G.; D'Hulst, D.S.

    2000-01-01

    The irradiation behaviour of electron beam (EB) and tungsten inert gas (TIG) welded joints of the reduced-activation martensitic steel IEA heat F82H-mod. was investigated by neutron irradiation experiments in the high flux reactor (HFR) in Petten. Mechanical test specimens, such as tensile specimens and KLST-type Charpy impact specimens, were neutron irradiated up to a dose level of 2-3 dpa at a temperature of 300 deg. C in the HFR reactor in Petten. The tensile results for TIG and EB welds are as expected with practically no strain hardening capacity left. Considering impact properties, there is a large variation in impact properties for the TIG weld. The irradiation tends to shift the DBTT of particularly the EB welds to very high values, some cases even above +250 deg. C. PWHT of EB-welded material gives a significant improvement of the DBTT and USE compared to the as-welded condition

  1. Application of calorimeters for 5 MeV EB and bremsstrahlung dosimetry

    DEFF Research Database (Denmark)

    Sato, T.; Takahashi, T.; Saito, T.

    1993-01-01

    Graphite and water calorimeters, which were developed for use a 10 MeV electron beams (EB) at Riso National Laboratory, were used for process validation and routine dosimeter calibration at a 5 MeV EB. Water calorimeters were used for reference measurements for 5 MeV EB, the response was found...... to be directly proportional to the beam current and the variation among three water calorimeters was less than +/- 2 % in the range of 10 to 40 kGy. CTA, PMMA, RCD dosimeters were calibrated by irradiating the dosimeters and water calorimeters Simultaneously. The water calorimeter was proved to be an useful tool...... at 5 MeV EB. Graphite calorimeters gave reproducible readings within 3.3 % relative errors (95 % confidence level) for X-ray measurement....

  2. Nanograined Net-Shaped Fabrication of Rhenium Components by EB-PVD

    International Nuclear Information System (INIS)

    Singh, Jogender; Wolfe, Douglas E.

    2004-01-01

    Cost-effective net-shaped forming components have brought considerable interest into DoD, NASA and DoE. Electron beam physical vapor deposition (EB-PVD) offers flexibility in forming net-shaped components with tailored microstructure and chemistry. High purity rhenium (Re) components including rhenium-coated graphite balls, Re- plates and tubes have been successfully manufactured by EB-PVD. EB-PVD Re components exhibited sub-micron and nano-sized grains with high hardness and strength as compared to CVD. It is estimated that the cost of Re components manufactured by EB-PVD would be less than the current CVD and powder-HIP Technologies

  3. Application of calorimeters for 5 MeV EB and bremsstrahlung dosimetry

    International Nuclear Information System (INIS)

    Sato, Toshio; Takahashi, Toru; Saito, Toshio; Takehisa, Masaaki; Miller, A.

    1993-01-01

    Graphite and water calorimeters, which were developed for use with 10 MeV electron beams (EB) at Riso National Laboratory, were used for process validation and routine dosimeter calibration at a 5 MeV EB. Water calorimeters were used for reference measurements for 5 MeV EB, the response was found to be directly proportional to the beam current and the variation among three water calorimeters was less than ± 2% in the range of 10 to 40 kGy. CTA PMMA RCD dosimeters were calibrated by irradiating the dosimeters and water calorimeters simultaneously. The water calorimeter was proved to be an useful tool at 5 MeV EB. Graphite calorimeters gave reproducible readings within 3.3 % relative errors (95% confidence level) for X-ray measurement. (Author)

  4. Voltage Balancing Method on Expert System for 51-Level MMC in High Voltage Direct Current Transmission

    Directory of Open Access Journals (Sweden)

    Yong Chen

    2016-01-01

    Full Text Available The Modular Multilevel Converters (MMC have been a spotlight for the high voltage and high power transmission systems. In the VSC-HVDC (High Voltage Direct Current based on Voltage Source Converter transmission system, the energy of DC link is stored in the distributed capacitors, and the difference of capacitors in parameters and charge rates causes capacitor voltage balance which affects the safety and stability of HVDC system. A method of MMC based on the expert system for reducing the frequency of the submodules (SMs of the IGBT switching frequency is proposed. Firstly, MMC with 51 levels for HVDC is designed. Secondly, the nearest level control (NLC for 51-level MMC is introduced. Thirdly, a modified capacitor voltage balancing method based on expert system for MMC-based HVDC transmission system is proposed. Finally, a simulation platform for 51-level Modular Multilevel Converter is constructed by using MATLAB/SIMULINK. The results indicate that the strategy proposed reduces the switching frequency on the premise of keeping submodule voltage basically identical, which greatly reduces the power losses for MMC-HVDC system.

  5. High voltage systems

    International Nuclear Information System (INIS)

    Martin, M.

    1991-01-01

    Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

  6. Disposal systems evaluations and tool development: Engineered Barrier System (EBS) evaluation

    International Nuclear Information System (INIS)

    Rutqvist, Jonny; Liu, Hui-Hai; Steefel, Carl I.; Serrano de Caro, M.A.; Caporuscio, Florie Andre; Birkholzer, Jens T.; Blink, James A.; Sutton, Mark A.; Xu, Hongwu; Buscheck, Thomas A.; Levy, Schon S.; Tsang, Chin-Fu; Sonnenthal, Eric; Halsey, William G.; Jove-Colon, Carlos F.; Wolery, Thomas J.

    2011-01-01

    Key components of the nuclear fuel cycle are short-term storage and long-term disposal of nuclear waste. The latter encompasses the immobilization of used nuclear fuel (UNF) and radioactive waste streams generated by various phases of the nuclear fuel cycle, and the safe and permanent disposition of these waste forms in geological repository environments. The engineered barrier system (EBS) plays a very important role in the long-term isolation of nuclear waste in geological repository environments. EBS concepts and their interactions with the natural barrier are inherently important to the long-term performance assessment of the safety case where nuclear waste disposition needs to be evaluated for time periods of up to one million years. Making the safety case needed in the decision-making process for the recommendation and the eventual embracement of a disposal system concept requires a multi-faceted integration of knowledge and evidence-gathering to demonstrate the required confidence level in a deep geological disposal site and to evaluate long-term repository performance. The focus of this report is the following: (1) Evaluation of EBS in long-term disposal systems in deep geologic environments with emphasis on the multi-barrier concept; (2) Evaluation of key parameters in the characterization of EBS performance; (3) Identification of key knowledge gaps and uncertainties; and (4) Evaluation of tools and modeling approaches for EBS processes and performance. The above topics will be evaluated through the analysis of the following: (1) Overview of EBS concepts for various NW disposal systems; (2) Natural and man-made analogs, room chemistry, hydrochemistry of deep subsurface environments, and EBS material stability in near-field environments; (3) Reactive Transport and Coupled Thermal-Hydrological-Mechanical-Chemical (THMC) processes in EBS; and (4) Thermal analysis toolkit, metallic barrier degradation mode survey, and development of a Disposal Systems

  7. Disposal systems evaluations and tool development : Engineered Barrier System (EBS) evaluation.

    Energy Technology Data Exchange (ETDEWEB)

    Rutqvist, Jonny (LBNL); Liu, Hui-Hai (LBNL); Steefel, Carl I. (LBNL); Serrano de Caro, M. A. (LLNL); Caporuscio, Florie Andre (LANL); Birkholzer, Jens T. (LBNL); Blink, James A. (LLNL); Sutton, Mark A. (LLNL); Xu, Hongwu (LANL); Buscheck, Thomas A. (LLNL); Levy, Schon S. (LANL); Tsang, Chin-Fu (LBNL); Sonnenthal, Eric (LBNL); Halsey, William G. (LLNL); Jove-Colon, Carlos F.; Wolery, Thomas J. (LLNL)

    2011-01-01

    Key components of the nuclear fuel cycle are short-term storage and long-term disposal of nuclear waste. The latter encompasses the immobilization of used nuclear fuel (UNF) and radioactive waste streams generated by various phases of the nuclear fuel cycle, and the safe and permanent disposition of these waste forms in geological repository environments. The engineered barrier system (EBS) plays a very important role in the long-term isolation of nuclear waste in geological repository environments. EBS concepts and their interactions with the natural barrier are inherently important to the long-term performance assessment of the safety case where nuclear waste disposition needs to be evaluated for time periods of up to one million years. Making the safety case needed in the decision-making process for the recommendation and the eventual embracement of a disposal system concept requires a multi-faceted integration of knowledge and evidence-gathering to demonstrate the required confidence level in a deep geological disposal site and to evaluate long-term repository performance. The focus of this report is the following: (1) Evaluation of EBS in long-term disposal systems in deep geologic environments with emphasis on the multi-barrier concept; (2) Evaluation of key parameters in the characterization of EBS performance; (3) Identification of key knowledge gaps and uncertainties; and (4) Evaluation of tools and modeling approaches for EBS processes and performance. The above topics will be evaluated through the analysis of the following: (1) Overview of EBS concepts for various NW disposal systems; (2) Natural and man-made analogs, room chemistry, hydrochemistry of deep subsurface environments, and EBS material stability in near-field environments; (3) Reactive Transport and Coupled Thermal-Hydrological-Mechanical-Chemical (THMC) processes in EBS; and (4) Thermal analysis toolkit, metallic barrier degradation mode survey, and development of a Disposal Systems

  8. High Efficiency Single Output ZVS-ZCS Voltage Doubled Flyback Converter

    Science.gov (United States)

    Kaliyaperumal, Deepa; Saju, Hridya Merin; Kumar, M. Vijaya

    2016-06-01

    A switch operating at high switching frequency increases the switching losses of the converter resulting in lesser efficiency. Hence this paper proposes a new topology which has resonant switches [zero voltage switching (ZVS)] in the primary circuit to eliminate the above said disadvantages, and voltage doubler zero current switching (ZCS) circuit in the secondary to double the output voltage, and hence the output power, power density and efficiency. The design aspects of the proposed topology for a single output of 5 V at 50 kHz, its simulation and hardware results are discussed in detail. The analysis of the results obtained from a 2.5 W converter reveals the superiority of the proposed converter.

  9. Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory device

    Science.gov (United States)

    Zhu, Lisha; Hu, Wei; Gao, Chao; Guo, Yongcai

    2017-12-01

    This paper reports the reversible transition processes between the bipolar and complementary resistive switching (CRS) characteristics on the binary metal-oxide resistive memory devices of Pt/HfO x /TiN and Pt/TaO x /TiN by applying the appropriate bias voltages. More interestingly, by controlling the amplitude of the negative bias, the parasitic resistive switching effect exhibiting repeatable switching behavior is uncovered from the CRS behavior. The electrical observation of the parasitic resistive switching effect can be explained by the controlled size of the conductive filament. This work confirms the transformation and interrelationship among the bipolar, parasitic, and CRS effects, and thus provides new insight into the understanding of the physical mechanism of the binary metal-oxide resistive switching memory devices.

  10. Switched on!

    CERN Multimedia

    2008-01-01

    Like a star arriving on stage, impatiently followed by each member of CERN personnel and by millions of eyes around the world, the first beam of protons has circulated in the LHC. After years in the making and months of increasing anticipation, today the work of hundreds of people has borne fruit. WELL DONE to all! Successfully steered around the 27 kilometres of the world’s most powerful particle accelerator at 10:28 this morning, this first beam of protons circulating in the ring marks a key moment in the transition from over two decades of preparation to a new era of scientific discovery. "It’s a fantastic moment," said the LHC project leader Lyn Evans, "we can now look forward to a new era of understanding about the origins and evolution of the universe". Starting up a major new particle accelerator takes much more than flipping a switch. Thousands of individual elements have to work in harmony, timings have to be synchronize...

  11. The removal of VOC from air using EB, MW and catalyst - Laboratory plant results

    International Nuclear Information System (INIS)

    Calinescu, I.; Ighigeanu, D.; Martin, D.

    2011-01-01

    A new hybrid technique for the VOCs removal from gases, based on the combined use of EB induced NTP (non-thermal plasma), MW induced NTP and catalytic oxidation, named “EB+MW-plasma catalysis”, is presented. The main goal of our research was to combine the features of each known technique used in gas pollution control, i.e. the very high efficiency of EB in converting VOCs to intermediate products, the ability of MW to produce and sustain NTP in large electrodeless reactors, and the important role of catalysts in the complete conversion to CO 2 and H 2 O. Our experiences shown that the two means of treating the gases are complementary: the catalytic oxidation in the presence of MW is efficient for high VOC initial concentrations and low flow rates while the exclusive use of the EB irradiation determines high decomposition efficiencies only in the case of very low concentrations of VOC but for large flow rates. Real synergistic effects between NTP and catalysis were obtained by introducing the catalyst into the irradiation zone. The main conclusion of this work is that the combined treatment EB+MW+catalyst improves both decomposition efficiency and oxidation efficiency. The EB+MW+Catalysis method demonstrated good results on a wide range of concentrations and flow rates. (author)

  12. The removal of VOC from air using EB, MW and catalyst - Laboratory plant results

    Energy Technology Data Exchange (ETDEWEB)

    Calinescu, I. [Polytechnic University, Bucharest (Romania); Ighigeanu, D.; Martin, D. [National Institute for Lasers, Plasma and Radiation Physics, Bucharest (Romania)

    2011-07-01

    A new hybrid technique for the VOCs removal from gases, based on the combined use of EB induced NTP (non-thermal plasma), MW induced NTP and catalytic oxidation, named “EB+MW-plasma catalysis”, is presented. The main goal of our research was to combine the features of each known technique used in gas pollution control, i.e. the very high efficiency of EB in converting VOCs to intermediate products, the ability of MW to produce and sustain NTP in large electrodeless reactors, and the important role of catalysts in the complete conversion to CO{sub 2} and H{sub 2}O. Our experiences shown that the two means of treating the gases are complementary: the catalytic oxidation in the presence of MW is efficient for high VOC initial concentrations and low flow rates while the exclusive use of the EB irradiation determines high decomposition efficiencies only in the case of very low concentrations of VOC but for large flow rates. Real synergistic effects between NTP and catalysis were obtained by introducing the catalyst into the irradiation zone. The main conclusion of this work is that the combined treatment EB+MW+catalyst improves both decomposition efficiency and oxidation efficiency. The EB+MW+Catalysis method demonstrated good results on a wide range of concentrations and flow rates. (author)

  13. Nano- and micro-electromechanical switch dynamics

    International Nuclear Information System (INIS)

    Pulskamp, Jeffrey S; Proie, Robert M; Polcawich, Ronald G

    2013-01-01

    This paper reports theoretical analysis and experimental results on the dynamics of piezoelectric MEMS mechanical logic relays. The multiple degree of freedom analytical model, based on modal decomposition, utilizes modal parameters obtained from finite element analysis and an analytical model of piezoelectric actuation. The model accounts for exact device geometry, damping, drive waveform variables, and high electric field piezoelectric nonlinearity. The piezoelectrically excited modal force is calculated directly and provides insight into design optimization for switching speed. The model accurately predicts the propagation delay dependence on actuation voltage of mechanically distinct relay designs. The model explains the observed discrepancies in switching speed of these devices relative to single degree of freedom switching speed models and suggests the strong potential for improved switching speed performance in relays designed for mechanical logic and RF circuits through the exploitation of higher order vibrational modes. (paper)

  14. An improved soft switched PWM interleaved boost AC-DC converter

    International Nuclear Information System (INIS)

    Genc, Naci; Iskender, Ires

    2011-01-01

    In this paper, an improved soft switched two cell interleaved boost AC/DC converter with high power factor is proposed and investigated. A new auxiliary circuit is designed and added to two cell interleaved boost converter to reduce the switching losses. The proposed auxiliary circuit is implemented using only one auxiliary switch and a minimum number of passive components without an important increase in the cost and complexity of the converter. The main advantage of this auxiliary circuit is that it not only provides zero-voltage-transition (ZVT) for the main switches but also provides soft switching for the auxiliary switch and diodes. Though all semiconductor devices operate under soft switching, they do not have any additional voltage and current stresses. The proposed converter operates successfully in soft switching operation mode for a wide range of input voltage level and the load. In addition, it has advantages such as fewer structure complications, lower cost and ease of control. In the study, the transition modes for describing the behavior of the proposed converter in one switching period are described. A prototype with 600 W output power, 50 kHz/cell switching frequency, input line voltage of 110-220 V rms and an output voltage of 400 V dc has been implemented. Analysis, design and the control circuitry are also presented in the paper.

  15. A simple self-breaking 2 MV gas switch

    Energy Technology Data Exchange (ETDEWEB)

    Di Capua, M.S.; Freytag, E.K.; Dixon, W.R.; Hawley, R.A.

    1987-06-29

    We describe a simple self-breaking 2 MV gas master switch for the LLNL 2 MV general purpose relativistic electron beam (REB) accelerator. The switch cavity has been hollowed out in a 17.8 cm-thick acrylic slab. The switch gap is 3.55 cm. At 2 MV the maximum field at the cathode is 740 kV cm/sup -1/ and the maximum envelope field is 172 kV cm/sup -1/. The maximum measured switching voltage is 1.90 +- 0.1 MV (10 bar abs). The minimum switching voltage is 1.1 MV (4.3 bar abs). The operating characteristics break away from the 89 kV/(cm atm) dc breakdown strength of SF/sub 6/ at 5 bar abs. Careful electrical and mechanical design as well as strict quality control during assembly and operation have resulted in reliable and reproducible operation.

  16. New Modulation Strategy to Balance the Neutral-Point Voltage for Three-Level Neutral-Clamped Inverter Systems

    DEFF Research Database (Denmark)

    Choi, Uimin; Lee, June-Seok; Lee, Kyo-Beum

    2014-01-01

    This paper proposes a new modulation strategy that balances the neutral-point voltage for three-level neutral-clamped inverter systems. The proposed modulation replaces the P-type or N-type small switching states with other switching states that do not affect the neutral-point voltage. The zero...... and medium switching states are employed to help the neutral-point voltage balancing. This method little bit increases the switching events and output total harmonic distortion. However, this method has a strong balancing ability at all regions. Further, it is very simple to implement in both space vector...

  17. Bistable switching in dual-frequency liquid crystals

    Energy Technology Data Exchange (ETDEWEB)

    Palto, S. P., E-mail: palto@online.ru; Barnik, M I [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2006-06-15

    Various bistable switching modes in nematic liquid crystals with frequency inversion of the sign of dielectric anisotropy are revealed and investigated. Switching between states with different helicoidal distributions of the director field of a liquid crystal, as well as between uniform and helicoidal states, is realized by dual-frequency waveforms of a driving voltage. A distinctive feature of the dual-frequency switching is that the uniform planar distribution of the director field may correspond to a thermodynamically equilibrium state, and the chirality of an LC is not a necessary condition for switching to a helicoidal state.

  18. Digital switched hydraulics

    Science.gov (United States)

    Pan, Min; Plummer, Andrew

    2018-06-01

    This paper reviews recent developments in digital switched hydraulics particularly the switched inertance hydraulic systems (SIHSs). The performance of SIHSs is presented in brief with a discussion of several possible configurations and control strategies. The soft switching technology and high-speed switching valve design techniques are discussed. Challenges and recommendations are given based on the current research achievements.

  19. Wind Power Plant Voltage Stability Evaluation: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Muljadi, E.; Zhang, Y. C.

    2014-09-01

    Voltage stability refers to the ability of a power system to maintain steady voltages at all buses in the system after being subjected to a disturbance from a given initial operating condition. Voltage stability depends on a power system's ability to maintain and/or restore equilibrium between load demand and supply. Instability that may result occurs in the form of a progressive fall or rise of voltages of some buses. Possible outcomes of voltage instability are the loss of load in an area or tripped transmission lines and other elements by their protective systems, which may lead to cascading outages. The loss of synchronism of some generators may result from these outages or from operating conditions that violate a synchronous generator's field current limit, or in the case of variable speed wind turbine generator, the current limits of power switches. This paper investigates the impact of wind power plants on power system voltage stability by using synchrophasor measurements.

  20. Buck supplies output voltage ripple reduction using fuzzy control

    Directory of Open Access Journals (Sweden)

    Nicu BIZON

    2007-12-01

    Full Text Available Using the PWM control for switching power supplies the peaks EMI noise appear at the switching frequency and its harmonics. Using randomize or chaotic PWM control techniques in these systems the power spectrum is spread out in all frequencies band spectral emissions, but with a bigger ripple in the output voltage. The proposed nonlinear feedback control method, which induces chaos, is based by fuzzy rules that minimize the output voltage ripple. The feasibility and effectiveness of this relative simple method is shown by simulation. A comparison with the previous control method is included, too.

  1. Single photon detection and localization accuracy with an ebCMOS camera

    Energy Technology Data Exchange (ETDEWEB)

    Cajgfinger, T. [CNRS/IN2P3, Institut de Physique Nucléaire de Lyon, Villeurbanne F-69622 (France); Dominjon, A., E-mail: agnes.dominjon@nao.ac.jp [Université de Lyon, Université de Lyon 1, Lyon 69003 France. (France); Barbier, R. [CNRS/IN2P3, Institut de Physique Nucléaire de Lyon, Villeurbanne F-69622 (France); Université de Lyon, Université de Lyon 1, Lyon 69003 France. (France)

    2015-07-01

    The CMOS sensor technologies evolve very fast and offer today very promising solutions to existing issues facing by imaging camera systems. CMOS sensors are very attractive for fast and sensitive imaging thanks to their low pixel noise (1e-) and their possibility of backside illumination. The ebCMOS group of IPNL has produced a camera system dedicated to Low Light Level detection and based on a 640 kPixels ebCMOS with its acquisition system. After reminding the principle of detection of an ebCMOS and the characteristics of our prototype, we confront our camera to other imaging systems. We compare the identification efficiency and the localization accuracy of a point source by four different photo-detection devices: the scientific CMOS (sCMOS), the Charge Coupled Device (CDD), the Electron Multiplying CCD (emCCD) and the Electron Bombarded CMOS (ebCMOS). Our ebCMOS camera is able to identify a single photon source in less than 10 ms with a localization accuracy better than 1 µm. We report as well efficiency measurement and the false positive identification of the ebCMOS camera by identifying more than hundreds of single photon sources in parallel. About 700 spots are identified with a detection efficiency higher than 90% and a false positive percentage lower than 5. With these measurements, we show that our target tracking algorithm can be implemented in real time at 500 frames per second under a photon flux of the order of 8000 photons per frame. These results demonstrate that the ebCMOS camera concept with its single photon detection and target tracking algorithm is one of the best devices for low light and fast applications such as bioluminescence imaging, quantum dots tracking or adaptive optics.

  2. Double input converters for different voltage sources with isolated charger

    Directory of Open Access Journals (Sweden)

    Chalash Sattayarak

    2014-09-01

    Full Text Available This paper presents the double input converters for different voltage input sources with isolated charger coils. This research aims to increase the performance of the battery charger circuit. In the circuit, there are the different voltage levels of input source. The operating modes of the switch in the circuit use the microcontroller to control the battery charge and to control discharge mode automatically when the input voltage sources are lost from the system. The experimental result of this research shows better performance for charging at any time period of the switch, while the voltage input sources work together. Therefore, this research can use and develop to battery charger for present or future.

  3. The gradual nature of threshold switching

    International Nuclear Information System (INIS)

    Wimmer, M; Salinga, M

    2014-01-01

    The recent commercialization of electronic memories based on phase change materials proved the usability of this peculiar family of materials for application purposes. More advanced data storage and computing concepts, however, demand a deeper understanding especially of the electrical properties of the amorphous phase and the switching behaviour. In this work, we investigate the temporal evolution of the current through the amorphous state of the prototypical phase change material, Ge 2 Sb 2 Te 5 , under constant voltage. A custom-made electrical tester allows the measurement of delay times over five orders of magnitude, as well as the transient states of electrical excitation prior to the actual threshold switching. We recognize a continuous current increase over time prior to the actual threshold-switching event to be a good measure for the electrical excitation. A clear correlation between a significant rise in pre-switching-current and the later occurrence of threshold switching can be observed. This way, we found experimental evidence for the existence of an absolute minimum for the threshold voltage (or electric field respectively) holding also for time scales far beyond the measurement range. (paper)

  4. Fast response double series resonant high-voltage DC-DC converter

    International Nuclear Information System (INIS)

    Lee, S S; Iqbal, S; Kamarol, M

    2012-01-01

    In this paper, a novel double series resonant high-voltage dc-dc converter with dual-mode pulse frequency modulation (PFM) control scheme is proposed. The proposed topology consists of two series resonant tanks and hence two resonant currents flow in each switching period. Moreover, it consists of two high-voltage transformer with the leakage inductances are absorbed as resonant inductor in the series resonant tanks. The secondary output of both transformers are rectified and mixed before supplying to load. In the resonant mode operation, the series resonant tanks are energized alternately by controlling two Insulated Gate Bipolar Transistor (IGBT) switches with pulse frequency modulation (PFM). This topology operates in discontinuous conduction mode (DCM) with all IGBT switches operating in zero current switching (ZCS) condition and hence no switching loss occurs. To achieve fast rise in output voltage, a dual-mode PFM control during start-up of the converter is proposed. In this operation, the inverter is started at a high switching frequency and as the output voltage reaches 90% of the target value, the switching frequency is reduced to a value which corresponds to the target output voltage. This can effectively reduce the rise time of the output voltage and prevent overshoot. Experimental results collected from a 100-W laboratory prototype are presented to verify the effectiveness of the proposed system.

  5. A Hybrid, Current-Source/Voltage-Source Power Inverter Circuit

    DEFF Research Database (Denmark)

    Trzynadlowski, Andrzej M.; Patriciu, Niculina; Blaabjerg, Frede

    2001-01-01

    A combination of a large current-source inverter and a small voltage-source inverter circuits is analyzed. The resultant hybrid inverter inherits certain operating advantages from both the constituent converters. In comparison with the popular voltage-source inverter, these advantages include...... reduced switching losses, improved quality of output current waveforms, and faster dynamic response to current control commands. Description of operating principles and characteristics of the hybrid inverter is illustrated with results of experimental investigation of a laboratory model....

  6. Triple Line-Voltage Cascaded VIENNA Converter Applied as the Medium-Voltage AC Drive

    Directory of Open Access Journals (Sweden)

    Jia Zou

    2018-04-01

    Full Text Available A novel rectifier based on a triple line-voltage cascaded VIENNA converter (LVC-VC was proposed. Compared to the conventional cascaded H-bridge converters, the switch voltage stress is lower, and the numbers of switches and dc capacitors are fewer under similar operating conditions in the proposed new multilevel converter. The modeling and control for the LVC-VC ware presented. Based on the analysis of the operation principle of the new converter, the power factor correction of the proposed converter was realized by employing a traditional one-cycle control strategy. The minimum average value and maximum harmonic components of the dc-link voltages of the three VIENNA rectifier modules ware calculated. Three VIENNA dc-link voltages were unbalanced under the unbalanced load conditions, so the zero sequence current was injected to the three inner currents for balancing three VIENNA dc-link voltages. Simulation and the results of the experiment verified the availability of the new proposed multilevel converter and the effectiveness of the corresponding control strategy applied.

  7. Wide-range voltage modulation

    International Nuclear Information System (INIS)

    Rust, K.R.; Wilson, J.M.

    1992-06-01

    The Superconducting Super Collider's Medium Energy Booster Abort (MEBA) kicker modulator will supply a current pulse to the abort magnets which deflect the proton beam from the MEB ring into a designated beam stop. The abort kicker will be used extensively during testing of the Low Energy Booster (LEB) and the MEB rings. When the Collider is in full operation, the MEBA kicker modulator will abort the MEB beam in the event of a malfunction during the filling process. The modulator must generate a 14-μs wide pulse with a rise time of less than 1 μs, including the delay and jitter times. It must also be able to deliver a current pulse to the magnet proportional to the beam energy at any time during ramp-up of the accelerator. Tracking the beam energy, which increases from 12 GeV at injection to 200 GeV at extraction, requires the modulator to operate over a wide range of voltages (4 kV to 80 kV). A vacuum spark gap and a thyratron have been chosen for test and evaluation as candidate switches for the abort modulator. Modulator design, switching time delay, jitter and pre-fire data are presented

  8. Modelling Coupled Processes in the Evolution of Repository Engineered Barrier Systems using QPAC-EBS

    Energy Technology Data Exchange (ETDEWEB)

    Maul, Philip; Benbow, Steven; Bond, Alex; Robinson, Peter (Quintessa Limited, Henley-on-Thames (United Kingdom))

    2010-08-15

    A satisfactory understanding of the evolution of repository engineered barrier systems (EBS) is an essential part of the safety case for the repository. This involves consideration of coupled Thermal (T), Hydro (H), Mechanical (M) and Chemical (C) processes. Quintessa's general-purpose modelling code QPAC is capable of representing strongly coupled non-linear processes and has been used in a wide range of applications. This code is the basis for software used by Quintessa in studies of the evolution of the EBS in a deep repository for spent nuclear fuel undertaken for SKI and then SSM since 2007. The collection of software components employed has been referred to collectively as QPAC-EBS, consisting of the core QPAC code together with relevant modules for T, H, M and C processes. QPAC-EBS employs a fundamentally different approach from dedicated codes that model such processes (although few codes can represent each type of process), enabling the specification of new processes and the associated governing equations in code input. Studies undertaken to date have demonstrated that QPAC-EBS can be used effectively to investigate both the early evolution of the EBS and important scenarios for the later evolution of the system when buffer erosion and canister corrosion may occur. A key issue for modelling EBS evolution is the satisfactory modelling of the behaviour of the bentonite buffer. Bentonite is a difficult material to model, partly because of the complex coupled mechanical, hydro and chemical processes involved in swelling during resaturation. Models employed to date have generally taken an empirical approach, but a new model developed during the EU THERESA project could be further developed to provide a better representation of these processes. QPAC-EBS could play an important role in supporting SSM.s review of the forthcoming SR-Site assessment by SKB if used by Quintessa in independent supporting calculations. To date radionuclide transport calculations

  9. New multilevel inverter with reduction of switches and gate driver

    Energy Technology Data Exchange (ETDEWEB)

    Banaei, M.R., E-mail: m.banaei@azaruniv.ed [Electrical Engineering Department, Faculty of Engineering, Azarbaijan University of Tarbiat Moallem, Tabriz (Iran, Islamic Republic of); Salary, E. [Electrical Engineering Department, Faculty of Engineering, Azarbaijan University of Tarbiat Moallem, Tabriz (Iran, Islamic Republic of)

    2011-02-15

    This paper presents a novel topology for symmetrical cascade multilevel converter. The proposed circuit consists of series connected sub multilevel converters units and it can generate DC voltage levels similar to other topologies. The proposed topology results in reduction of switches number, losses, installation area and converter cost. This converter has been used in a Dynamic Voltage Restorer (DVR). Simulation results carried out by MATLAB/SIMULINK show the voltage injection capability of converter and the efficiency of its controller in compensating voltage sag and swell.

  10. Magnetically switched power supply system for lasers

    Science.gov (United States)

    Pacala, Thomas J. (Inventor)

    1987-01-01

    A laser power supply system is described in which separate pulses are utilized to avalanche ionize the gas within the laser and then produce a sustained discharge to cause the gas to emit light energy. A pulsed voltage source is used to charge a storage device such as a distributed capacitance. A transmission line or other suitable electrical conductor connects the storage device to the laser. A saturable inductor switch is coupled in the transmission line for containing the energy within the storage device until the voltage level across the storage device reaches a predetermined level, which level is less than that required to avalanche ionize the gas. An avalanche ionization pulse generating circuit is coupled to the laser for generating a high voltage pulse of sufficient amplitude to avalanche ionize the laser gas. Once the laser gas is avalanche ionized, the energy within the storage device is discharged through the saturable inductor switch into the laser to provide the sustained discharge. The avalanche ionization generating circuit may include a separate voltage source which is connected across the laser or may be in the form of a voltage multiplier circuit connected between the storage device and the laser.

  11. The experimental investigation of explosive opening switch

    International Nuclear Information System (INIS)

    Zhang Jiande; Zhong Huihuang; Li Chuanlu; Liu Yonggui; Cheng Dongqun; Peng Xianyang

    1996-01-01

    The explosive opening switch (EOS) used in explosive-driven magnetic-flux compression generator (EMCG) circuits was investigated. It is shown that (1) under certain conditions, the EOS voltage is hardly dependent on the size of the explosive and aluminium foil used in EOS; (2) with the explosive coated by an insulator pipe, the opening effect of EOS is better; (3) by use of EOS, a pulse with 5 kA current, 100 kV voltage and 250 ns risetime has been transferred into a resistance load. (author). 12 figs., 5 refs

  12. Spin Switching via Quantum Dot Spin Valves

    Science.gov (United States)

    Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.

    2018-01-01

    We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.

  13. The experimental investigation of explosive opening switch

    Energy Technology Data Exchange (ETDEWEB)

    Jiande, Zhang; Huihuang, Zhong; Chuanlu, Li; Yonggui, Liu; Dongqun, Cheng; Xianyang, Peng [National Univ. of Defense Technology, Changsha (China). Dept. of Applied Physics

    1997-12-31

    The explosive opening switch (EOS) used in explosive-driven magnetic-flux compression generator (EMCG) circuits was investigated. It is shown that (1) under certain conditions, the EOS voltage is hardly dependent on the size of the explosive and aluminium foil used in EOS; (2) with the explosive coated by an insulator pipe, the opening effect of EOS is better; (3) by use of EOS, a pulse with 5 kA current, 100 kV voltage and 250 ns risetime has been transferred into a resistance load. (author). 12 figs., 5 refs.

  14. The Transistor as Low Level Switch

    Energy Technology Data Exchange (ETDEWEB)

    Lyden, Anders

    1963-10-15

    The common collector transistor switch has in the on state with open emitter a certain offset voltage U{sub EK} {approx_equal} -kT/qB{sub N}. This expression is derived in a new, more physical way. It is further shown at which emitter current the current amplification factor B{sub N} should be measured to get a correct value for the above expression. The collector current I at zero collector voltage I{sub K} = I{sub 0}(exp(qU{sub E}/kT) - 1) extremely well. Substitution of I{sub EBO} and I{sub KBO} by I{sub 0} in Eber's and Moll's relations consequently improves these equations and the characteristics of the transistor switch can be better determined. At switching on and off transients appear across the switch. The influence of the 'spike' at switching off can be described by an current I{sub SPIKE} which is easy to calculate. I{sub SPIKE} is approximately dependent only on the base - emitter depletion layer capacitance and the chopper frequency f{sub 0}. Some compensated switches have lower drift than the drift in U{sub EK}. They may, for example, have a temperature drift < 0.2 {mu}V/deg C and a long time drift < 2 {mu}V/week. Some compensated switches also have I{sub SPIKE} < 10{sup -12} f{sub 0}A. The static offset current in the off state can easily be made < 10{sup -12} A.

  15. Unity power factor switching regulator

    Science.gov (United States)

    Rippel, Wally E. (Inventor)

    1983-01-01

    A single or multiphase boost chopper regulator operating with unity power factor, for use such as to charge a battery is comprised of a power section for converting single or multiphase line energy into recharge energy including a rectifier (10), one inductor (L.sub.1) and one chopper (Q.sub.1) for each chopper phase for presenting a load (battery) with a current output, and duty cycle control means (16) for each chopper to control the average inductor current over each period of the chopper, and a sensing and control section including means (20) for sensing at least one load parameter, means (22) for producing a current command signal as a function of said parameter, means (26) for producing a feedback signal as a function of said current command signal and the average rectifier voltage output over each period of the chopper, means (28) for sensing current through said inductor, means (18) for comparing said feedback signal with said sensed current to produce, in response to a difference, a control signal applied to the duty cycle control means, whereby the average inductor current is proportionate to the average rectifier voltage output over each period of the chopper, and instantaneous line current is thereby maintained proportionate to the instantaneous line voltage, thus achieving a unity power factor. The boost chopper is comprised of a plurality of converters connected in parallel and operated in staggered phase. For optimal harmonic suppression, the duty cycles of the switching converters are evenly spaced, and by negative coupling between pairs 180.degree. out-of-phase, peak currents through the switches can be reduced while reducing the inductor size and mass.

  16. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in ``avalanche`` mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into ``avalanche`` mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

  17. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

  18. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1990-01-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential of GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into an avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large are (1 sq cm) and small area (<1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs., 11 figs.

  19. Subnanosecond photoconductive switching in GaAs

    Science.gov (United States)

    Druce, R. L.; Pocha, M. D.; Griffin, K. L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in 'avalanche' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into 'avalanche' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (less than 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300-1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on, and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation.

  20. High-Voltage Power Switching for a Conducting Tether

    National Research Council Canada - National Science Library

    Harkare, Sriram; Dougal, Roger; Carroll, Joseph A; Liu, Shengyi

    2006-01-01

    .... EDDE uses solar power to drive multi-ampere currents through a kilometers-long aluminum conductor, creating a force normal to both the conductor and the local magnetic field that drives the space vehicle...

  1. Impact analysis of tap switch out of step for converter transformer

    Science.gov (United States)

    Hong-yue, ZHANG; Zhen-hua, ZHANG; Zhang-xue, XIONG; Gao-wang, YU

    2017-06-01

    AC transformer load regulation is mainly used to adjust the load side voltage level, improve the quality of power supply, the voltage range is relatively narrow. In DC system, converter transformer is the core equipment of AC and DC power converter and inverter. converter transformer tap adjustment can maintain the normal operation of the converter in small angle range control, the absorption of reactive power, economic operation, valve less stress, valve damping circuit loss, AC / DC harmonic component is also smaller. In this way, the tap switch action is more frequent, and a large range of the tap switch adjustment is required. Converter transformer with a more load voltage regulation switch, the voltage regulation range of the switch is generally 20~30%, the adjustment of each file is 1%~2%. Recently it is often found that the tap switch of Converter Transformers is out of step in Converter station. In this paper, it is analyzed in detail the impact of tap switch out of step for differential protection, overexcitation protection and zero sequence over current protection. Analysis results show that: the tap switch out of step has no effect on the differential protection and the overexcitation protection including the tap switch. But the tap switch out of step has effect on zero sequence overcurrent protection of out of step star-angle converter transformer. The zero sequence overcurrent protection will trip when the tap switch out of step is greater than 3 for out of step star-angle converter transformer.

  2. Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation

    International Nuclear Information System (INIS)

    Hua-Jun, Sun; Li-Song, Hou; Yi-Qun, Wu; Xiao-Dong, Tang

    2009-01-01

    We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge 1 Sb 4 Te 7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude

  3. Latching micro optical switch

    Science.gov (United States)

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  4. [A case with chronic active EB virus infection accompanied with pulmonary candidiasis].

    Science.gov (United States)

    Karino, T; Nakamura, J; Fujita, K; Kobashi, Y; Yano, T; Okimoto, N; Soejima, R

    1998-12-01

    A 44-year-old woman with a history of intermittent fever for several years was admitted because of burn on her leg. On admission, she had hepatosplenomegaly and fever. Antibiotic therapy was started for bacterial infection of the burn. She lost her appetite and IVH was started. During the treatment, high fever appeared and chest X-ray films showed multiple nodular infiltrates throughout both lung fields. Candida albicans was isolated from IVH catheter culture and pulmonary candidiasis was suspected. Her fever and lung involvements were successfully treated with fluconazole. During the course, serum anti-EB-VCA-IgG antibody persisted at a high titer and anti-EBNA antibody remained negative. EB virus DNA was detected in the peripheral blood and bone marrow. Thus, she was diagnosed as chronic active EB virus infection.

  5. Technological Aspects: High Voltage

    International Nuclear Information System (INIS)

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered. (author)

  6. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D.C.

    2013-12-16

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  7. End-Binding Protein 1 (EB1) Up-regulation is an Early Event in Colorectal Carcinogenesis

    Science.gov (United States)

    Stypula-Cyrus, Yolanda; Mutyal, Nikhil N.; Cruz, Mart Angelo Dela; Kunte, Dhananjay P.; Radosevich, Andrew J.; Wali, Ramesh; Roy, Hemant K.; Backman, Vadim

    2014-01-01

    End-binding protein (EB1) is a microtubule protein that binds to the tumor suppressor adenomatous polyposis coli (APC). While EB1 is implicated as a potential oncogene, its role in cancer progression is unknown. Therefore, we analyzed EB1/APC expression at the earliest stages of colorectal carcinogenesis and in the uninvolved mucosa ("field effect") of human and animal tissue. We also performed siRNA-knockdown in colon cancer cell lines. EB1 is up-regulated in early and field carcinogenesis in the colon, and the cellular/nano-architectural effect of EB1 knockdown depended on the genetic context. Thus, dysregulation of EB1 is an important early event in colon carcinogenesis. PMID:24492008

  8. Research on IGBT solid state switch

    International Nuclear Information System (INIS)

    Gan Kongyin; Tang Baoyin; Wang Xiaofeng; Wang Langping; Wang Songyan; Wu Hongchen

    2002-01-01

    The experiments on the IGBT solid state switch for induction accelerator was carried out with two series 1.2 kV, 75 A IGBT (GA75TS120U). The static and dynamic balancing modules were carried out with metal oxide varistors, capacities and diodes in order to suppress the over-voltage during IGBT on and off. Experimental results show that IGBT solid state switch works very stable under the different conditions. It can output peak voltage 1.8 kV, rise time 300 ns, fall time 1.64 μs waveforms on the loads. The simulation data using OrCAD are in accord with experimental results except the rise time

  9. Research on IGBT solid state switch

    CERN Document Server

    Gan Kong Yin; Wang Xiao Feng; Wang Lang Ping; Wang Song Yan; Chu, P K; Wu Hong Chen

    2002-01-01

    The experiments on the IGBT solid state switch for induction accelerator was carried out with two series 1.2 kV, 75 A IGBT (GA75TS120U). The static and dynamic balancing modules were carried out with metal oxide varistors, capacities and diodes in order to suppress the over-voltage during IGBT on and off. Experimental results show that IGBT solid state switch works very stable under the different conditions. It can output peak voltage 1.8 kV, rise time 300 ns, fall time 1.64 mu s waveforms on the loads. The simulation data using OrCAD are in accord with experimental results except the rise time

  10. Three New Pierce's Disease Pathogenicity Effectors Identified Using Xylella fastidiosa Biocontrol Strain EB92-1.

    Science.gov (United States)

    Zhang, Shujian; Chakrabarty, Pranjib K; Fleites, Laura A; Rayside, Patricia A; Hopkins, Donald L; Gabriel, Dean W

    2015-01-01

    Xylella fastidiosa (X. fastidiosa) infects a wide range of plant hosts and causes economically serious diseases, including Pierce's Disease (PD) of grapevines. X. fastidiosa biocontrol strain EB92-1 was isolated from elderberry and is infectious and persistent in grapevines but causes only very slight symptoms under ideal conditions. The draft genome of EB92-1 revealed that it appeared to be missing genes encoding 10 potential PD pathogenicity effectors found in Temecula1. Subsequent PCR and sequencing analyses confirmed that EB92-1 was missing the following predicted effectors found in Temecula1: two type II secreted enzymes, including a lipase (LipA; PD1703) and a serine protease (PD0956); two identical genes encoding proteins similar to Zonula occludens toxins (Zot; PD0915 and PD0928), and at least one relatively short, hemagglutinin-like protein (PD0986). Leaves of tobacco and citrus inoculated with cell-free, crude protein extracts of E. coli BL21(DE3) overexpressing PD1703 exhibited a hypersensitive response (HR) in less than 24 hours. When cloned into shuttle vector pBBR1MCS-5, PD1703 conferred strong secreted lipase activity to Xanthomonas citri, E. coli and X. fastidiosa EB92-1 in plate assays. EB92-1/PD1703 transformants also showed significantly increased disease symptoms on grapevines, characteristic of PD. Genes predicted to encode PD0928 (Zot) and a PD0986 (hemagglutinin) were also cloned into pBBR1MCS-5 and moved into EB92-1; both transformants also showed significantly increased symptoms on V. vinifera vines, characteristic of PD. Together, these results reveal that PD effectors include at least a lipase, two Zot-like toxins and a possibly redundant hemagglutinin, none of which are necessary for parasitic survival of X. fastidiosa populations in grapevines or elderberry.

  11. Three New Pierce's Disease Pathogenicity Effectors Identified Using Xylella fastidiosa Biocontrol Strain EB92-1.

    Directory of Open Access Journals (Sweden)

    Shujian Zhang

    Full Text Available Xylella fastidiosa (X. fastidiosa infects a wide range of plant hosts and causes economically serious diseases, including Pierce's Disease (PD of grapevines. X. fastidiosa biocontrol strain EB92-1 was isolated from elderberry and is infectious and persistent in grapevines but causes only very slight symptoms under ideal conditions. The draft genome of EB92-1 revealed that it appeared to be missing genes encoding 10 potential PD pathogenicity effectors found in Temecula1. Subsequent PCR and sequencing analyses confirmed that EB92-1 was missing the following predicted effectors found in Temecula1: two type II secreted enzymes, including a lipase (LipA; PD1703 and a serine protease (PD0956; two identical genes encoding proteins similar to Zonula occludens toxins (Zot; PD0915 and PD0928, and at least one relatively short, hemagglutinin-like protein (PD0986. Leaves of tobacco and citrus inoculated with cell-free, crude protein extracts of E. coli BL21(DE3 overexpressing PD1703 exhibited a hypersensitive response (HR in less than 24 hours. When cloned into shuttle vector pBBR1MCS-5, PD1703 conferred strong secreted lipase activity to Xanthomonas citri, E. coli and X. fastidiosa EB92-1 in plate assays. EB92-1/PD1703 transformants also showed significantly increased disease symptoms on grapevines, characteristic of PD. Genes predicted to encode PD0928 (Zot and a PD0986 (hemagglutinin were also cloned into pBBR1MCS-5 and moved into EB92-1; both transformants also showed significantly increased symptoms on V. vinifera vines, characteristic of PD. Together, these results reveal that PD effectors include at least a lipase, two Zot-like toxins and a possibly redundant hemagglutinin, none of which are necessary for parasitic survival of X. fastidiosa populations in grapevines or elderberry.

  12. An optical fiber Bragg grating and piezoelectric ceramic voltage sensor

    Science.gov (United States)

    Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

    2017-10-01

    Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

  13. An optical fiber Bragg grating and piezoelectric ceramic voltage sensor.

    Science.gov (United States)

    Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

    2017-10-01

    Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

  14. Stray voltage mitigation

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

    2008-04-09

    This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

  15. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  16. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  17. A Application of WD Model to EB Type Contact Binary System

    Directory of Open Access Journals (Sweden)

    Su-Yeon Oh

    2000-12-01

    Full Text Available The EB type contact binaries show large temperature difference ( T 1,000K between two components. Thus we have modified the mode 3 of the WD program to adjust albedos, limb darkening coefficients and gravity darkening exponents for both components of such binaries, while the values for those parameters should be same for both components in the original WD program. Both of the modified and the original versions have been applied to the EB type contact binaries such as DO Cas, GO Cyg, and FS Lup. The computed light curves with modified version fit better to the observations.

  18. Engineered barrier systems (EBS) in the context of the entire safety case

    International Nuclear Information System (INIS)

    2003-01-01

    A joint NEA-EC workshop entitled 'Engineered Barrier Systems (EBS) in the Context of the Entire Safety Case' was organised in Oxford on 25-27 September 2002 and hosted by United Kingdom Nirex Limited. The main objectives of the workshop were to provide a status report on engineered barrier systems in various national radioactive waste management programmes considering deep geological disposal; to establish the value to member countries of a project on EBS; and to define such a project's scope, timetable and modus operandi. This report presents the outcomes of this workshop. (author)

  19. Engineered Barrier Systems (EBS) in the Context of the Entire Safety Case

    International Nuclear Information System (INIS)

    2005-01-01

    A joint NEA-EC workshop entitled ''Engineered Barrier Systems (EBS) in the Context of the Entire Safety Case'' was organised in Oxford on 25-27 September 2002 and hosted by United Kingdom Nirex Limited. The main objectives of the workshop were to provide a status report on engineered barrier systems in various national radioactive waste management programmes considering deep geological disposal; to establish the value to member countries of a project on EBS; and to define such a project scope, timetable and modus operandi. This report presents the outcomes of this workshop. (author)

  20. A Novel Single Phase Hybrid Switched Reluctance Motor Drive System

    DEFF Research Database (Denmark)

    Liang, Jianing; Xu, Guoqing; Jian, Linni

    2011-01-01

    In this paper, a novel single phase hybrid switched reluctance motor(SRM) drive system is proposed. It integrated a single phase hybrid SRM and a novel single phase boost converter. This motor can reduce the number of phase switch. And the permanent magnet which is used in the motor can improve...... the performance and efficiency of SR motor. However, the inherent characteristic of this motor is that the negative torque is very sensitive with the excitation current near the turn-on angle. The slow excitation current limits the torque generation region and reduces the average torque. Therefore, a novel single...... phase boost converter is applied to improve the performance of this motor. It is easy to generate a double dclink voltage and dc-link voltage and switch both of them. The voltage of boost capacitor is self balance, so the protective circuit is not need to consider. The fast excitation mode helps hybrid...

  1. A novel multi-actuation CMOS RF MEMS switch

    Science.gov (United States)

    Lee, Chiung-I.; Ko, Chih-Hsiang; Huang, Tsun-Che

    2008-12-01

    This paper demonstrates a capacitive shunt type RF MEMS switch, which is actuated by electro-thermal actuator and electrostatic actuator at the same time, and than latching the switching status by electrostatic force only. Since thermal actuators need relative low voltage compare to electrostatic actuators, and electrostatic force needs almost no power to maintain the switching status, the benefits of the mechanism are very low actuation voltage and low power consumption. Moreover, the RF MEMS switch has considered issues for integrated circuit compatible in design phase. So the switch is fabricated by a standard 0.35um 2P4M CMOS process and uses wet etching and dry etching technologies for postprocess. This compatible ability is important because the RF characteristics are not only related to the device itself. If a packaged RF switch and a packaged IC wired together, the parasitic capacitance will cause the problem for optimization. The structure of the switch consists of a set of CPW transmission lines and a suspended membrane. The CPW lines and the membrane are in metal layers of CMOS process. Besides, the electro-thermal actuators are designed by polysilicon layer of the CMOS process. So the RF switch is only CMOS process layers needed for both electro-thermal and electrostatic actuations in switch. The thermal actuator is composed of a three-dimensional membrane and two heaters. The membrane is a stacked step structure including two metal layers in CMOS process, and heat is generated by poly silicon resistors near the anchors of membrane. Measured results show that the actuation voltage of the switch is under 7V for electro-thermal added electrostatic actuation.

  2. Reproducible and controllable induction voltage adder for scaled beam experiments

    Energy Technology Data Exchange (ETDEWEB)

    Sakai, Yasuo; Nakajima, Mitsuo; Horioka, Kazuhiko [Department of Energy Sciences, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan)

    2016-08-15

    A reproducible and controllable induction adder was developed using solid-state switching devices and Finemet cores for scaled beam compression experiments. A gate controlled MOSFET circuit was developed for the controllable voltage driver. The MOSFET circuit drove the induction adder at low magnetization levels of the cores which enabled us to form reproducible modulation voltages with jitter less than 0.3 ns. Preliminary beam compression experiments indicated that the induction adder can improve the reproducibility of modulation voltages and advance the beam physics experiments.

  3. Modular low-voltage electron emitters

    International Nuclear Information System (INIS)

    Berejka, Anthony J.

    2005-01-01

    Modular, low-voltage electron emitters simplify electron beam (EB) technology for many industrial uses and for research and development. Modular electron emitters are produced in quantity as sealed systems that are evacuated at the factory, eliminating the need for vacuum pumps at the point of use. A plug-out-plug-in method of replacement facilitates servicing. By using an ultra-thin 6-7 μm titanium foil window, solid-state power supplies, an innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, these modular units combine ease of use and electrical transfer efficiency at voltages that can be varied between 80 kV and 150 kV with beam currents up to 40 mA per 25 cm across the beam window. These new devices have been made in three widths: 5 cm, 25 cm, and 40 cm. Details of the beam construction and illustrations of industrial uses will be presented. Traditional uses in the graphic arts and coatings areas have welcomed this modular technology as well as uses for surface sterilization. Being compact and lightweight (∼15 kg/emitter), these modular beams have been configured around complex shapes to achieve three-dimensional surface curing at high production rates

  4. Modular low-voltage electron emitters

    Science.gov (United States)

    Berejka, Anthony J.

    2005-12-01

    Modular, low-voltage electron emitters simplify electron beam (EB) technology for many industrial uses and for research and development. Modular electron emitters are produced in quantity as sealed systems that are evacuated at the factory, eliminating the need for vacuum pumps at the point of use. A plug-out-plug-in method of replacement facilitates servicing. By using an ultra-thin 6-7 μm titanium foil window, solid-state power supplies, an innovative design to extract and spread the beam (enabling systems to be placed adjacent to each other to extend beam width) and touch-screen computer controls, these modular units combine ease of use and electrical transfer efficiency at voltages that can be varied between 80 kV and 150 kV with beam currents up to 40 mA per 25 cm across the beam window. These new devices have been made in three widths: 5 cm, 25 cm, and 40 cm. Details of the beam construction and illustrations of industrial uses will be presented. Traditional uses in the graphic arts and coatings areas have welcomed this modular technology as well as uses for surface sterilization. Being compact and lightweight (∼15 kg/emitter), these modular beams have been configured around complex shapes to achieve three-dimensional surface curing at high production rates.

  5. Single-photon sensitive fast ebCMOS camera system for multiple-target tracking of single fluorophores: application to nano-biophotonics

    Science.gov (United States)

    Cajgfinger, Thomas; Chabanat, Eric; Dominjon, Agnes; Doan, Quang T.; Guerin, Cyrille; Houles, Julien; Barbier, Remi

    2011-03-01

    Nano-biophotonics applications will benefit from new fluorescent microscopy methods based essentially on super-resolution techniques (beyond the diffraction limit) on large biological structures (membranes) with fast frame rate (1000 Hz). This trend tends to push the photon detectors to the single-photon counting regime and the camera acquisition system to real time dynamic multiple-target tracing. The LUSIPHER prototype presented in this paper aims to give a different approach than those of Electron Multiplied CCD (EMCCD) technology and try to answer to the stringent demands of the new nano-biophotonics imaging techniques. The electron bombarded CMOS (ebCMOS) device has the potential to respond to this challenge, thanks to the linear gain of the accelerating high voltage of the photo-cathode, to the possible ultra fast frame rate of CMOS sensors and to the single-photon sensitivity. We produced a camera system based on a 640 kPixels ebCMOS with its acquisition system. The proof of concept for single-photon based tracking for multiple single-emitters is the main result of this paper.

  6. A high voltage ratio and low ripple interleaved DC-DC converter for fuel cell applications.

    Science.gov (United States)

    Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

    2012-01-01

    This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters.

  7. 35-kV GaAs subnanosecond photoconductive switches

    Energy Technology Data Exchange (ETDEWEB)

    Pocha, M.D.; Druce, R.L. (Lawrence Livermore National Lab., CA (United States))

    1990-12-01

    Photoconductive switches are one of the few devices that allow the generation of high-voltage electrical pulses with subnanosecond rise time. The authors are exploring high-voltage, fast-pulse generation using GaAs photoconductive switches. They have been able to generate 35-kV pulses with rise times as short as 135 ps using 5-mm gap switches and have achieved electric field hold-off of greater than 100 kV/cm. They have also been able to generate an approximately 500-ps FWHM on/off electrical pulse with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier life times. This paper describes the experimental results and discusses fabrication of switches and the diagnostics used to measure these fast signals. They also describe the experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs.

  8. Neutron and gamma irradiation effects on power semiconductor switches

    Science.gov (United States)

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  9. Soft switching PWM isolated boost converter for fuel cell application

    Energy Technology Data Exchange (ETDEWEB)

    Rezaei, M.; Adib, E. [Isfahan Univ. of Technology, Isfahan (Iran, Islamic Republic of)

    2009-07-01

    This presentation introduced a newly developed soft switching, isolated boost type converter for fuel cell applications. With a simple PWM control circuit, the converter achieves zero voltage switching the main switch. Since the auxiliary circuit is soft switched, the converter can operate at high powers which make it suitable for fuel cell applications. In particular, the converter is suitable for the interface of fuel cell and inverters because of its high voltage gain and isolation between input and output sources. In addition, the input current of the converter (current drained from the fuel cell) is almost constant since it is a boost type converter. The converter was analyzed and the simulation results validate the theoretical analysis.

  10. A compact, all solid-state LC high voltage generator.

    Science.gov (United States)

    Fan, Xuliang; Liu, Jinliang

    2013-06-01

    LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

  11. High power switches for ion induction linacs

    International Nuclear Information System (INIS)

    Humphries, S.; Savage, M.; Saylor, W.B.

    1985-01-01

    The success of linear induction ion accelerators for accelerator inertial fusion (AIF) applications depends largely on innovations in pulsed power technology. There are tight constraints on the accuracy of accelerating voltage waveforms to maintain a low momentum spread. Furthermore, the non-relativistic ion beams may be subject to a klystronlike interaction with the accelerating cavities, leading to enhanced momentum spread. In this paper, we describe a novel high power switch with a demonstrated ability to interrupt 300 A at 20 kV in less than 60 ns. The switch may allow the replacement of pulse modulators in linear induction accelerators with hard tube pulsers. A power system based on a hard tube pulser could solve the longitudinal instability problem while maintaining high energy transfer efficiency. The problem of longitudinal beam control in ion induction linacs is reviewed in Section 2. Section 3 describes the principles of the plasma flow switch. Experimental results are summarized in Section 4

  12. Nanoeletromechanical switch and logic circuits formed therefrom

    Science.gov (United States)

    Nordquist, Christopher D [Albuquerque, NM; Czaplewski, David A [Albuquerque, NM

    2010-05-18

    A nanoelectromechanical (NEM) switch is formed on a substrate with a source electrode containing a suspended electrically-conductive beam which is anchored to the substrate at each end. This beam, which can be formed of ruthenium, bows laterally in response to a voltage applied between a pair of gate electrodes and the source electrode to form an electrical connection between the source electrode and a drain electrode located near a midpoint of the beam. Another pair of gate electrodes and another drain electrode can be located on an opposite side of the beam to allow for switching in an opposite direction. The NEM switch can be used to form digital logic circuits including NAND gates, NOR gates, programmable logic gates, and SRAM and DRAM memory cells which can be used in place of conventional CMOS circuits, or in combination therewith.

  13. High power switches for ion induction linacs

    International Nuclear Information System (INIS)

    Humphries, S. Jr.; Savage, M.; Saylor, W.B.

    1985-01-01

    The success of linear induction ion accelerators for accelerator inertial fusion (AIF) applications depends largely on innovations in pulsed power technology. There are tight constraints on the accuracy of accelerating voltage waveforms to maintain a low momentum spread. Furthermore, the non-relativistic ion beams may be subject to a klystron-like interaction with the accelerating cavities leading to enhanced momentum spread. In this paper, the author describe a novel high power switch with a demonstrated ability to interrupt 300 A at 20 kV in less than 60 ns. The switch may allow the replacement of pulse modulators in linear induction accelerators with hard tube pulsers. A power system based on a hard tube pulser could solve the longitudinal instability problem while maintaining high energy transfer efficiency. The problem of longitudinal beam control in ion induction linacs is reviewed in Section 2. Section 3 describes the principles of the plasma flow switch. Experimental results are summarized in Section 4

  14. Plasma opening switch experiments on supermite

    International Nuclear Information System (INIS)

    Mendel, C.W.; Quintenz, J.P.; Rosenthal, S.E.; Savage, M.E.

    1988-01-01

    Experiments using plasma opening switches with fast field coils and plasmas injected on slow magnetic fields are described. Data showing the measurement of the field penetration into the volume that initially held the plasma fill will be shown. Assuming the plasma is mostly pushed back from the coil, rather than being penetrated by the magnetic field allows the density to be calculated, and gives densities of a few times 10 13 cm -3 for our usual operating range. The data makes it clear that the switch is open well before the initial plasma volume is completely penetrated by the magnetic fields. Additional measurements relating to the magnetic field penetration distance and physical penetration mechanism are presented. Other data presented show a magnetic insulation problem which must be solved before very large voltage multiplication can be accomplished with sufficient switch efficiency

  15. Voltage regulator placement in radial distribution system using plant ...

    African Journals Online (AJOL)

    user

    location and number along with tap setting of the voltage regulators that ... can be fixed or switched type; they are considered integer multiple of a capacitor unit ..... By simulating the growth process of plant phototropism, a probability model ..... He is referee for IEE Proceedings - Generation Transmission and Distribution and ...

  16. Studies on resistive switching times in NiO thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Misra, P; Sahu, V K; Ajimsha, R S; Das, A K; Singh, B

    2017-01-01

    The resistive switching dynamics of NiO thin films in Au/NiO/Pt device configuration have been investigated to measure the switching times of set and reset events and their dependence on compliance current and switching voltages. The set switching time was found to be ∼10 ns at the set voltage of ∼1.8 V, while reset switching time was much longer ∼150 µ s at reset voltage of 0.8 V. With increasing compliance current from 5 to 75 mA during set process, although the resistance contrast of two states improved due to the decrease in the resistance of the low resistance state, the reset switching time increased substantially up to ∼3 ms while set time remained nearly unchanged. The fast reset switching time of ∼27 ns, comparable to that of set switching time, was achieved by applying a higher reset voltage of ∼1.2 V. The observed dependence of reset time on compliance current and reset voltage in NiO thin films was explained in light of the conducting filamentary model in which reset process is of thermal nature and involves dissolution of conducting filaments as a consequence of Joule heating generated by the reset current. (paper)

  17. PV source based high voltage gain current fed converter

    Science.gov (United States)

    Saha, Soumya; Poddar, Sahityika; Chimonyo, Kudzai B.; Arunkumar, G.; Elangovan, D.

    2017-11-01

    This work involves designing and simulation of a PV source based high voltage gain, current fed converter. It deals with an isolated DC-DC converter which utilizes boost converter topology. The proposed converter is capable of high voltage gain and above all have very high efficiency levels as proved by the simulation results. The project intends to produce an output of 800 V dc from a 48 V dc input. The simulation results obtained from PSIM application interface were used to analyze the performance of the proposed converter. Transformer used in the circuit steps up the voltage as well as to provide electrical isolation between the low voltage and high voltage side. Since the converter involves high switching frequency of 100 kHz, ultrafast recovery diodes are employed in the circuitry. The major application of the project is for future modeling of solar powered electric hybrid cars.

  18. Electronically commutated serial-parallel switching for motor windings

    Science.gov (United States)

    Hsu, John S [Oak Ridge, TN

    2012-03-27

    A method and a circuit for controlling an ac machine comprises controlling a full bridge network of commutation switches which are connected between a multiphase voltage source and the phase windings to switch the phase windings between a parallel connection and a series connection while providing commutation discharge paths for electrical current resulting from inductance in the phase windings. This provides extra torque for starting a vehicle from lower battery current.

  19. Electrostatic Switching in Vertically Oriented Nanotubes for Nonvolatile Memory Applications

    Science.gov (United States)

    Kaul, Anupama B.; Khan, Paul; Jennings, Andrew T.; Greer, Julia R.; Megerian, Krikor G.; Allmen, Paul von

    2009-01-01

    We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a nanoprobe was used as the actuating electrode inside an SEM. When the nanoprobe was manipulated to be in close proximity to a single tube, switching voltages between 10 V - 40 V were observed, depending on the geometrical parameters. The turn-on transitions appeared to be much sharper than the turn-off transitions which were limited by the tube-to-probe contact resistances. In many cases, stiction forces at these dimensions were dominant, since the tube appeared stuck to the probe even after the voltage returned to 0 V, suggesting that such structures are promising for nonvolatile memory applications. The stiction effects, to some extent, can be adjusted by engineering the switch geometry appropriately. Nanoscale mechanical measurements were also conducted on the tubes using a custom-built anoindentor inside an SEM, from which preliminary material parameters, such as the elastic modulus, were extracted. The mechanical measurements also revealed that the tubes appear to be well adhered to the substrate. The material parameters gathered from the mechanical measurements were then used in developing an electrostatic model of the switch using a commercially available finite-element simulator. The calculated pull-in voltages appeared to be in agreement to the experimentally obtained switching voltages to first order.

  20. Manufacture of Radio Frequency Micromachined Switches with Annealing

    Directory of Open Access Journals (Sweden)

    Cheng-Yang Lin

    2014-01-01

    Full Text Available The fabrication and characterization of a radio frequency (RF micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

  1. Manufacture of radio frequency micromachined switches with annealing.

    Science.gov (United States)

    Lin, Cheng-Yang; Dai, Ching-Liang

    2014-01-17

    The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

  2. Experimental study on the characteristics of semiconductor opening switch

    CERN Document Server

    Su Jian Cang; Ding Yong Zhong; Song Zhi Min; Ding Zhen Jie; Liu Guo Zhi

    2002-01-01

    An experimental set-up is developed to measure the characteristics of semiconductor opening switch (SOS). The parameters, such as interruption impedance, current int eruption time, voltage gain, pulse duration and energy transfer efficiency, are studied experimentally. The experimental results show that forward pumping time and reverse pumping time are important parameters for semiconductor opening switches. The influences of forward pumping time and reverse pumping time on interruption time, voltage gain, and energy transfer efficiency are obtained. In the interruption process, the impedance variation is divided into three phases: that is rapid increasing phase, slow change phase and completely interruption phase

  3. 76 FR 59927 - Treatment of Aliens Whose Employment Creation Immigrant (EB-5) Petitions Were Approved After...

    Science.gov (United States)

    2011-09-28

    ...-0029] RIN 1615-AA90 Treatment of Aliens Whose Employment Creation Immigrant (EB-5) Petitions Were... qualifying aliens whose employment-creation immigrant petitions were approved by the former Immigration and...-273 Provisions C. Summary of the Adjudications Required by Public Law 107-273 III. Aliens Eligible To...

  4. 76 FR 61288 - Treatment of Aliens Whose Employment Creation Immigrant (EB-5) Petitions Were Approved After...

    Science.gov (United States)

    2011-10-04

    ... DEPARTMENT OF HOMELAND SECURITY 8 CFR Parts 216 and 245 [CIS No. 2484-09; Docket No. USCIS-2009-0029] RIN 1615-AA90 Treatment of Aliens Whose Employment Creation Immigrant (EB-5) Petitions Were... corrects an inadvertent error contained in the proposed rule titled Treatment of Aliens Whose Employment...

  5. EB and EUV lithography using inedible cellulose-based biomass resist material

    Science.gov (United States)

    Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

    2016-03-01

    The validity of our approach of inedible cellulose-based resist material derived from woody biomass has been confirmed experimentally for the use of pure water in organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques of eco-conscious electron beam (EB) and extreme-ultraviolet (EUV) lithography. The water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB and EUV lithography was developed for environmental affair, safety, easiness of handling, and health of the working people. The inedible cellulose-based biomass resist material was developed by replacing the hydroxyl groups in the beta-linked disaccharides with EB and EUV sensitive groups. The 50-100 nm line and space width, and little footing profiles of cellulose-based biomass resist material on hardmask and layer were resolved at the doses of 10-30 μC/cm2. The eco-conscious lithography techniques was referred to as green EB and EUV lithography using inedible cellulose-based biomass resist material.

  6. Narvas näeb Eesti tantsuauhinna võitnud tantsulavastust / Rene Nõmmik ; intervjueerinud Tiia Linnart

    Index Scriptorium Estoniae

    Nõmmik, Rene, 1962-

    2015-01-01

    Narva kultuurimajas Rugodiv näeb Fine5 tantsuteatri lavastust "...and blue", mis võitis tänavu Eesti teatriauhinna. Etenduse koreograafideks ja lavastajateks on Tiina Ollesk ja Rene Nõmmik, keda on palutud lavastama ka Venemaale. Intervjuu Rene Nõmmikuga

  7. EB-PVD process management for highly productive zirconia thermal barrier coating of turbine blades

    International Nuclear Information System (INIS)

    Reinhold, E.; Botzler, P.; Deus, C.

    1999-01-01

    Zirconia thermal barrier coatings are well used in the turbine manufacturing industry because they ensure extended lifetimes of turbine blades. Compared with other techniques, EB-PVD processes are best suited for the deposition on turbine blades with regard to the layer properties. Therefore EB-PVD coaters for turbine blades are becoming increasingly interesting. The coating costs per component are mainly dependent on a highly productive solution for the deposition task. Thus the EB-PVD process management has to be optimized in order to meet the productivity requirements of the manufacturers. This includes the requirement of high deposition rates, large deposition areas, long time stable production cycles as well as a matched duration of preheating, deposition and cooling down per charge. Modern EB-PVD solutions to be introduced allow deposition rates on blades up to 7 μm/min. The consequences for the technological process management and plant design concerning long time stable coating cycles with high productivity will be discussed. (orig.)

  8. Synchronised Voltage Space Vector Modulation for Three-level Inverters with Common-mode Voltage Elimination

    DEFF Research Database (Denmark)

    Oleschuk, Valentin; Blaabjerg, Frede

    2002-01-01

    A novel method of direct synchronous pulse-width modulation (PWM) is disseminated to three-level voltage source inverters with control algorithms with elimination of the common-mode voltages in three-phase drive systems with PWM. It provides smooth pulses-ratio changing and a quarter-wave symmetry...... of the voltage waveforms during the whole control range including overmodulation. Continuous, discontinuous and "direct-direct" schemes of synchronous PWM with both algebraic and trigonometric control functions have been analysed and compared. Simulations give the behaviour of the proposed methods and show some...... advantages of synchronous PWM in comparison with asynchronous at low ratios between the switching frequency and fundamental frequency....

  9. A Switched Capacitor Based AC/DC Resonant Converter for High Frequency AC Power Generation

    Directory of Open Access Journals (Sweden)

    Cuidong Xu

    2015-09-01

    Full Text Available A switched capacitor based AC-DC resonant power converter is proposed for high frequency power generation output conversion. This converter is suitable for small scale, high frequency wind power generation. It has a high conversion ratio to provide a step down from high voltage to low voltage for easy use. The voltage conversion ratio of conventional switched capacitor power converters is fixed to n, 1/n or −1/n (n is the switched capacitor cell. In this paper, A circuit which can provide n, 1/n and 2n/m of the voltage conversion ratio is presented (n is stepping up the switched capacitor cell, m is stepping down the switching capacitor cell. The conversion ratio can be changed greatly by using only two switches. A resonant tank is used to assist in zero current switching, and hence the current spike, which usually exists in a classical switching switched capacitor converter, can be eliminated. Both easy operation and efficiency are possible. Principles of operation, computer simulations and experimental results of the proposed circuit are presented. General analysis and design methods are given. The experimental result verifies the theoretical analysis of high frequency AC power generation.

  10. Residual stress investigation of copper plate and canister EB-Welds Complementary Results

    International Nuclear Information System (INIS)

    Gripenberg, H.

    2009-03-01

    The residual stresses in copper as induced by EB-welding were studied by specimens where the weld had two configurations: either a linear or a circumferential weld. This report contains the residual stress measurements of two plates, containing linear welds, and the full-scale copper lid specimen to which a hollow cylinder section had been joined by a circumferential EB-weld. The residual stress state of the EB-welded copper specimens was investigated by X-ray diffraction (XRD), hole drilling (HD) ring core (RC) and contour method (CM). Three specimens, canister XK010 and plates X251 and X252, were subjected to a thorough study aiming at quantitative determination of the residual stress state in and around the EB-welds using XRD for surface and HD and RC for spatial stress analysis. The CM maps one stress component over a whole cross section. The surface residual stresses measured by XRD represent the machined condition of the copper material. The XRD study showed that the stress changes towards compression close to the weld in the hollow cylinder, which indicates shrinkage in the hoop direction. According to the same analogy, the shrinkage in the axial direction is much smaller. The HD measurements showed that the stress state in the base material is bi-axial and, in terms of von Mises stress, 50 MPa for the plates and 20 MPa for the cylinder part of the canister. The stress state in the EB-welds of all specimens differs clearly from the stress state in the base material being more tensile, with higher magnitudes of von Mises stress in the plate than in the canister welds. The HD and RC results were obtained using linear elastic theory. The RC measurements showed that the maximum principal stress in the BM is close to zero near the surface and it becomes slightly tensile, 10 MPa, deeper under the surface. Welding pushed the general stress state towards tension with the maximum principal stress reaching 50 MPa, deeper than 5 mm below the surface in the weld. The

  11. Evaluation of parameters associated with UV/EB cured clearcoats degradation used in outdoor environment

    International Nuclear Information System (INIS)

    Ruiz, Carmen Silvia Bentivoglio

    2003-01-01

    The materials curable by ultraviolet (UV) or electron beam (EB) radiation such as inks, adhesives and coatings are reactive compounds made up of resin, monomer, photoinitiator and additives which undergo polymerization and crosslinking under irradiation producing thermoset products. This technology has been used in a great variety of industrial applications, replacing the conventional curing process in the development of new products. One of the challenging applications has been to design weatherable radiation cured coating which maintain their desirable physical properties and aesthetic appearance. This research reports information about the behavior of four UV and EB curable clear coatings -with or without light stabilizer additives- under accelerated weathering. Thermogravimetry, differential scanning calorimetry, differential photo calorimetry, infrared and ultraviolet spectroscopy and tensile properties were used to evaluate these formulations. Clear coating 50 mum thick films were cured with UV and EB radiation at different doses. The UV curing process was carried out at room temperature using an UV tunnel, with a medium pressure mercury lamp and a transport belt with variable speed. The ultraviolet radiation doses were in the range of 50 to 1500 mJ cm -2 . The EB curing process was performed under N 2 atmosphere, with doses in the range from 1,6 to 300 kGy using the IPEN-CNEN/SP Dynamitron electron beam accelerator with energy of 1.5 MeV. The cure degree was determined by means of the residual reaction heat of the under cured samples obtained from photo-DSC or DSC measurements. The accelerated aging tests were carried out using a Weather-Ometer chamber with exposition times in the range of 100 to 3000 hours. The experimental data obtained from the photo-aged samples were evaluated and correlated to the formulation composition, type of radiation - UV or EB, radiation dose and residence time in the aging chamber. The results have shown that the EB cured films

  12. High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    Science.gov (United States)

    Shimer, Daniel W.; Lange, Arnold C.

    1995-01-01

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  13. High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    Science.gov (United States)

    Shimer, D.W.; Lange, A.C.

    1995-05-23

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

  14. Production of fast switching power thyristors by proton irradiation

    International Nuclear Information System (INIS)

    Sawko, D.C.; Bartko, J.

    1983-01-01

    There are several techniques currently employed by various manufacturers in the fabrication of fast switching power thyristors. Gold doping and irradiation by electron beams are among the more common ones. In all cases, the fast switching capability results from a reduction of the minority carrier lifetime of the host material by the introduction of carrier traps or recombination centers. However, accompanying this beneficial reduction in switching speed is a deleterious increase in forward voltage drop which also results from the introduction of carrier traps. Methods which minimize the voltage drop increase as the switching speed is reduced are highly desirable. One such method would achieve this by introducing the traps or recombination centers into well defined narrow regions where they will be more effective in reducing the switching speed than in increasing the forward voltage drop. Because the proton range-energy relationship in materials is relatively well defined and the lifetime reducing displacements occur near the end of their ranges, the lifetime in silicon can be reduced where desired by the precise control of proton energy. Dual energy proton beams from a tandem Van de Graaff accelerator were used in the experiments to determine whether proton beam irradiations offer advantages over other techniques. This was the subject of the present work. The results indicate that this is the preferred technique for reproducibly and rapidly processing fast switching thyristors with superior characteristics. The experimental procedure is discussed and comparisons are made with electron and neutron irradiated thyristors

  15. Voltage scheduling for low power/energy

    Science.gov (United States)

    Manzak, Ali

    2001-07-01

    Power considerations have become an increasingly dominant factor in the design of both portable and desk-top systems. An effective way to reduce power consumption is to lower the supply voltage since voltage is quadratically related to power. This dissertation considers the problem of lowering the supply voltage at (i) the system level and at (ii) the behavioral level. At the system level, the voltage of the variable voltage processor is dynamically changed with the work load. Processors with limited sized buffers as well as those with very large buffers are considered. Given the task arrival times, deadline times, execution times, periods and switching activities, task scheduling algorithms that minimize energy or peak power are developed for the processors equipped with very large buffers. A relation between the operating voltages of the tasks for minimum energy/power is determined using the Lagrange multiplier method, and an iterative algorithm that utilizes this relation is developed. Experimental results show that the voltage assignment obtained by the proposed algorithm is very close (0.1% error) to that of the optimal energy assignment and the optimal peak power (1% error) assignment. Next, on-line and off-fine minimum energy task scheduling algorithms are developed for processors with limited sized buffers. These algorithms have polynomial time complexity and present optimal (off-line) and close-to-optimal (on-line) solutions. A procedure to calculate the minimum buffer size given information about the size of the task (maximum, minimum), execution time (best case, worst case) and deadlines is also presented. At the behavioral level, resources operating at multiple voltages are used to minimize power while maintaining the throughput. Such a scheme has the advantage of allowing modules on the critical paths to be assigned to the highest voltage levels (thus meeting the required timing constraints) while allowing modules on non-critical paths to be assigned

  16. Nonlinear Deadbeat Current Control of a Switched Reluctance Motor

    OpenAIRE

    Rudolph, Benjamin

    2009-01-01

    High performance current control is critical to the success of the switched reluctance motor (SRM). Yet high motor phase nonlinearities in the SRM place extra burden on the current controller, rendering it the weakest link in SRM control. In contrast to linear motor control techniques that respond to current error, the deadbeat controller calculates the control voltage by the current command, phase current, rotor position and applied phase voltage. The deadbeat controller has demonstrated sup...

  17. A novel voltage clamp circuit for the measurement of transistor dynamic on-resistance

    NARCIS (Netherlands)

    Gelagaev, R.; Jacqmaer, P.; Everts, J.; Driesen, Johan

    2012-01-01

    For determining the dynamic on-resistance Rdyn,on of a power transistor, the voltage and current waveforms have to be measured during the switching operation. In measurements of voltage waveforms, using an oscilloscope, the characteristics of an amplifier inside the oscilloscope are distorted when

  18. Polyurethane acrylate networks including cellulose nanocrystals: a comparison between UV and EB- curing

    International Nuclear Information System (INIS)

    Furtak-Wrona, K.; Kozik-Ostrówka, P.; Jadwiszczak, K.; Maigret, J.E.; Aguié-Béghin, V.; Coqueret, X.

    2018-01-01

    A water-based polyurethane (PUR) acrylate water emulsion was selected as a radiation curable matrix for preparing nanocomposites including cellulose nanocrystals (CNC) prepared by controlled hydrolysis of Ramie fibers. Cross-linking polymerization of samples prepared in the form of films or of 1 mm-thick bars was either initiated by exposure to the 395 nm light of a high intensity LED lamp or by treatment with low energy electron beam (EB). The conversion level of acrylate functions in samples submitted to increasing radiation doses was monitored by Fourier Transform Infrared Spectroscopy (FTIR). Differential Scanning Calorimetry (DSC) and Dynamic Mechanical Analysis (DMA) were used to characterize changes in the glass transition temperature of the PUR-CNC nanocomposites as a function of acrylate conversion and of CNC content. Micromechanical testing indicates the positive effect of 1 wt% CNC on Young's modulus and on the tensile strength at break (σ) of cured nanocomposites. The presence of CNC in the PUR acrylate matrix was shown to double the σ value of the nanocomposite cured to an acrylate conversion level of 85% by treatment with a 25 kGy dose under EB, whereas no increase of σ was observed in UV-cured samples exhibiting the same acrylate conversion level. The occurrence of grafting reactions inducing covalent linkages between the polysaccharide nanofiller and the PUR acrylate matrix during the EB treatment is advanced as an explanation to account for the improvement observed in samples cured under ionizing radiation. - Highlights: • Nanocomposites were prepared from o/w PUR acrylate emulsion and CNC suspension. • Nanocomposite and reference materials were cured to the same conversion by UV or EB. • Introducing 1 wt% CNC in EB-cured composites doubles the tensile strength. • UV-cured nanocomposites did not show significant improvement in tensile strength.

  19. Design and realization of high voltage disconnector condition monitoring system

    Science.gov (United States)

    Shi, Jinrui; Xu, Tianyang; Yang, Shuixian; Li, Buoyang

    2017-08-01

    The operation status of the high voltage disconnector directly affects the safe and stable operation of the power system. This article uses the wireless frequency hopping communication technology of the communication module to achieve the temperature acquisition of the switch contacts and high voltage bus, to introduce the current value of the loop in ECS, and judge the operation status of the disconnector by considering the ambient temperature, calculating the temperature rise; And through the acquisition of the current of drive motor in the process of switch closing and opening, and fault diagnosis of the disconnector by analyzing the change rule of the drive motor current, the condition monitoring of the high voltage disconnector is realized.

  20. SVPWM Technique with Varying DC-Link Voltage for Common Mode Voltage Reduction in a Matrix Converter and Analytical Estimation of its Output Voltage Distortion

    Science.gov (United States)

    Padhee, Varsha

    Common Mode Voltage (CMV) in any power converter has been the major contributor to premature motor failures, bearing deterioration, shaft voltage build up and electromagnetic interference. Intelligent control methods like Space Vector Pulse Width Modulation (SVPWM) techniques provide immense potential and flexibility to reduce CMV, thereby targeting all the afore mentioned problems. Other solutions like passive filters, shielded cables and EMI filters add to the volume and cost metrics of the entire system. Smart SVPWM techniques therefore, come with a very important advantage of being an economical solution. This thesis discusses a modified space vector technique applied to an Indirect Matrix Converter (IMC) which results in the reduction of common mode voltages and other advanced features. The conventional indirect space vector pulse-width modulation (SVPWM) method of controlling matrix converters involves the usage of two adjacent active vectors and one zero vector for both rectifying and inverting stages of the converter. By suitable selection of space vectors, the rectifying stage of the matrix converter can generate different levels of virtual DC-link voltage. This capability can be exploited for operation of the converter in different ranges of modulation indices for varying machine speeds. This results in lower common mode voltage and improves the harmonic spectrum of the output voltage, without increasing the number of switching transitions as compared to conventional modulation. To summarize it can be said that the responsibility of formulating output voltages with a particular magnitude and frequency has been transferred solely to the rectifying stage of the IMC. Estimation of degree of distortion in the three phase output voltage is another facet discussed in this thesis. An understanding of the SVPWM technique and the switching sequence of the space vectors in detail gives the potential to estimate the RMS value of the switched output voltage of any

  1. Characterization and switching performance of electron-beam controlled discharges

    International Nuclear Information System (INIS)

    Lowry, J.F.; Kline, L.E.; Heberlein, J.V.R.

    1986-01-01

    The electron-beam sustained discharge switch is an attractive concept for repetitive pulsed power switching because it has a demonstrated capability to interrupt direct current and because it is inherently scalable. The authors report on experiments with this type of switch in a 4-kV dc circuit. A wire-ion-plasma (WIP) electron-beam (e-beam) gun is used to irradiate and sustain a switch discharge with a 100-cm/sup 2/ cross-sectional area in l atm of N/sub 2/ or CH/sub 4/. Interruption of 8-10-μs pulses of up to 1.9 kA, and of 100-μs pulses of 150 A has been demonstrated in methane, and interruption against higher recovery voltages (11 kV) has been performed at 1.2 kA by adding series inductance to the circuit. These values represent power supply limitations rather than limitations of the switch itself. A comparison of the measured discharge characteristics with theoretical predictions shows that the measured switch conductivities are higher than the predicted values for given e-beam current values. A qualitative explanation for this observation is offered by considering the effects of electron reflection from the discharge anode and of nonlinear paths for the beam electrons across the discharge gap. The authors conclude that the switching performance of the e-beam controlled discharge switch corresponds to its design parameters, and that for a given switch size a lower voltage drop during the on time can be expected compared with the voltage drop predicted by previously published theory

  2. Constant Switching Frequency Self-Oscillating Controlled Class-D Amplifiers

    DEFF Research Database (Denmark)

    Nguyen-Duy, Khiem; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    The self-oscillating control approach has been used extensively in class-D amplifiers. It has several advantages such as high bandwidth and high audio performance. However, one of the primary disadvantages in a self-oscillating controlled system is that the switching frequency of the amplifier...... varies with the ratio of the output voltage to the input rail voltage. In other words, the switching frequency varies with the duty cycle of the output. The drop in the frequency results in lower control bandwidth and higher output voltage ripple, which are undesirable. This paper proposes a new self-oscillating...... control scheme that maintains a constant switching frequency over the full range of output voltage. The frequency difference is processed by a compensator whose output adjusts the total loop gain of the control system. It has been proven by simulation that a con-stant switching frequency self-oscillating...

  3. A 350 KV nanosecond pulse voltage generator with adjustable pulsed-width

    International Nuclear Information System (INIS)

    Wang, X.; Wang, M.; Chen, Y.Q.; Zeng, L.G.; Han, M.

    2002-01-01

    This paper presents a 350 kV nanosecond pulse voltage generator (NPVG). The voltage pulsed-width can be adjusted from 30 to 160 ns. The generator consists of: Marx generator, pulsed forming line (PFL), main switch and matched impedance. The output voltage of Marx generator is over than nU c (n- the stage number of Marx generator, U c -the charging voltage of capacitor). When the pulse forming line is terminated with an impedance that is over than the characteristic impedance of PFL, the higher voltage pulse was provided for the load

  4. Analytical drift-current threshold voltage model of long-channel double-gate MOSFETs

    International Nuclear Information System (INIS)

    Shih, Chun-Hsing; Wang, Jhong-Sheng

    2009-01-01

    This paper presents a new, physical threshold voltage model to solve the ambiguity in determining the threshold voltage of double-gate (DG) MOSFETs. To avoid the difficulties of the conventional 2ψ B model in nearly undoped DG MOSFETs, this study proposes to define the on–off switching based on the actual roles of the drift and diffusion components in the total drain current. The drift current strongly enhances beyond the threshold voltage, while the diffusion current plays a major role in the subthreshold. The threshold voltage is defined as the drift component that exceeds the diffusion counterpart. From the solutions of Poisson's equation, the drift and diffusion currents of DG MOSFETs are separately formulated to derive the analytical expressions of the threshold voltage and associated threshold current. This model provides a comprehensive description of the switching behavior of DG MOSFET devices, and offers a physical onset threshold current to determine the threshold voltage in practical extraction

  5. Evaluation of the threshold trimming method for micro inertial fluidic switch based on electrowetting technology

    Directory of Open Access Journals (Sweden)

    Tingting Liu

    2014-03-01

    Full Text Available The switch based on electrowetting technology has the advantages of no moving part, low contact resistance, long life and adjustable acceleration threshold. The acceleration threshold of switch can be fine-tuned by adjusting the applied voltage. This paper is focused on the electrowetting properties of switch and the influence of microchannel structural parameters, applied voltage and droplet volume on acceleration threshold. In the presence of process errors of micro inertial fluidic switch and measuring errors of droplet volume, there is a deviation between test acceleration threshold and target acceleration threshold. Considering the process errors and measuring errors, worst-case analysis is used to analyze the influence of parameter tolerance on the acceleration threshold. Under worst-case condition the total acceleration threshold tolerance caused by various errors is 9.95%. The target acceleration threshold can be achieved by fine-tuning the applied voltage. The acceleration threshold trimming method of micro inertial fluidic switch is verified.

  6. A modified two-level three-phase quasi-soft-switching inverter

    DEFF Research Database (Denmark)

    Liu, Yusheng; Wu, Weimin; Blaabjerg, Frede

    2014-01-01

    A traditional Voltage Source Inverter (VSI) has higher efficiency than a Current Voltage Source (CSI) due to the less conduction power loss. However, the reverse recovery of the free-wheeling diode limits the efficiency improvement for the silicon devices based hard-switching VSI. The traditional...... quasi-soft-switching inverter can alternate between VSI and CSI by using a proper control scheme and thereby reduce the power losses caused by the reverse recovery of the free-wheeling diode. Nevertheless, slightly extra conduction power loss of the auxiliary switch is also introduced. In order...... to reduce the extra conduction power loss and the voltage stress across the DC-link capacitor, a modified two-level three-phase quasi-soft-switching inverter is proposed by using a SiC MOSFET instead of an IGBT. The principle of the modified two-level three-phase quasi-soft-switching inverter is analyzed...

  7. Primary study on synthesis and characterization of the new type EB curable resins. Pt.2: Alkyd resins modified by LFA

    International Nuclear Information System (INIS)

    Yi Min; Wei Jinshan; Li Jun; Wang Ruiyu; Ha Hongfei

    1995-01-01

    The authors have synthesized a new type of EB curable resin by using oil fatty acid. The preparation method of coating and the performance of EB curing coating film were described. The synthesis process has been simplified and the price of the raw materials was lower

  8. 76 FR 1192 - Notice of a Change in Status of an Extended Benefit (EB) Period for Puerto Rico

    Science.gov (United States)

    2011-01-07

    ... Extended Benefit (EB) Period for Puerto Rico AGENCY: Employment and Training Administration, Labor. ACTION... Puerto Rico. The following change has occurred since the publication of the last notice regarding the State's EB status: Puerto Rico's 13-week IUR has fallen below the 6% threshold and does not equal or...

  9. High-power semiconductor RSD-based switch

    Energy Technology Data Exchange (ETDEWEB)

    Bezuglov, V G; Galakhov, I V; Grusin, I A [All-Russian Scientific Research Inst. of Experimental Physics, Sarov (Russian Federation); and others

    1997-12-31

    The operating principle and test results of a high-power semiconductor RSD-based switch with the following operating parameters is described: operating voltage 25 kV, peak operating current 200 kA, maximum transferred charge 70 C. The switch is intended for use by high-power capacitor banks of state-of-the-art research facilities. The switch was evaluated for applicability in commercial pulsed systems. The possibility of increasing the peak operating current to 500 kA is demonstrated. (author). 4 figs., 2 refs.

  10. A Survey on Modeling and Simulation of MEMS Switches and Its Application in Power Gating Techniques

    OpenAIRE

    Pramod Kumar M.P; A.S. Augustine Fletcher

    2014-01-01

    Large numbers of techniques have been developed to reduce the leakage power, including supply voltage scaling, varying threshold voltages, smaller logic banks, etc. Power gating is a technique which is used to reduce the static power when the sleep transistor is in off condition. Micro Electro mechanical System (MEMS) switches have properties that are very close to an ideal switch, with infinite off-resistance due to an air gap and low on-resistance due to the ohmic metal to m...

  11. AC transmission, with very high voltages and the 750 kV line

    Energy Technology Data Exchange (ETDEWEB)

    Bocker, H

    1964-01-01

    The economic case for adoption of extra-high voltages for transmitting electric power over distances of the order of 1000 km is discussed. Some special technical developments for solving the problems attached to such high voltages are briefly discussed, particularly in the fields of switching and transients suppression. The first 750-kV projects in Canada and Russia are mentioned. Equipment, e.g., bushings, transformers, etc., operating at such voltages are illustrated.

  12. High voltage pulse generator. [Patent application

    Science.gov (United States)

    Fasching, G.E.

    1975-06-12

    An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

  13. Arduino Based RFID Line Switching Using SSR

    Directory of Open Access Journals (Sweden)

    Michael E.

    2017-10-01

    Full Text Available The importance of line switching cannot be overemphasized as they are used to connect and disconnect substations to and from a distribution grid. At the cradle of technology line switching was achieved via the use of manual switches or fuses which could endanger life as a result of electrocution when expose during maintenance. This ill prompted the development of automated line switching using relays and contactors. With time this tends to fail as a result of wearing of the contact which is as a result of arcing and low voltage. To avert all these ills this paper presents Arduino based Radio Frequency Identification RFID line switching using Solid State Relay SSR. This is to ensure the safety of operators or technologist and to also avert the problem associated with relays and contactors using SSR. This was achieved using RFID RC-522 reader ardriuno Uno SSR and other discrete components. The system was tested and worked perfectly reducing the risk of electrocution and eliminating damage wearing of the contacts common with contactors and relays.

  14. Launched electrons in plasma opening switches

    International Nuclear Information System (INIS)

    Mendel, C.W. Jr.; Rochau, G.E.; Sweeney, M.A.; McDaniel, D.H.; Quintenz, J.P.; Savage, M.E.; Lindman, E.L.; Kindel, J.M.

    1989-01-01

    Plasma opening switches have provided a means to improve the characteristics of super-power pulse generators. Recent advances involving plasma control with fast and slow magnetic fields have made these switches more versatile, allowing for improved switch uniformity, triggering, and opening current levels that are set by the level of auxiliary fields. Such switches necessarily involve breaks in the translational symmetry of the transmission line geometry and therefore affect the electron flow characteristics of the line. These symmetry breaks are the result of high electric field regions caused by plasma conductors remaining in the transmission line, ion beams crossing the line, or auxilliary magnetic field regions. Symmetry breaks cause the canonical momentum of the electrons to change, thereby moving them away from the cathode. Additional electrons are pulled from the cathode into the magnetically insulated flow, resulting in an excess of electron flow over that expected for the voltage and line current downstream of the switch. We call these electrons ''launched electrons''. Unless they are recaptured at the cathode or else are fed into the load and used beneficially, they cause a large power loss downstream. This paper will show examples of SuperMite and PBFA II data showing these losses, explain the tools we are using to study them, and discuss the mechanisms we will employ to mitigate the problem. The losses will be reduced primarily by reducing the amount of launched electron flow. 7 refs., 9 figs

  15. New fast switches for the Tore Supra ohmic heating circuit

    International Nuclear Information System (INIS)

    Zunino, K.; Bruneth, J.; Cara, P.; Louart, A.; Santagiustina, A.; Emelyanova, I.; Filippov, F.; Mikailov, N.

    2003-01-01

    The Tore-Supra ohmic heating circuit is equipped with four fast make switches and one fast opening switch. After many years of operation, it became necessary to substitute this equipment by modern components with similar ratings. An extensive research has been undertaken to find fast switches able to withstand more than 2500 operations per year without maintenance, at a make current of 54 kA, a voltage of 12 kV and with a closing time of less than 15 ms. At the end of the investigation, it was decided to replace the old components by fast mechanical switches proposed by the Efremov Institute and based on a prototype developed for ITER. This paper presents the technical requirements and the characteristics of the switches and describes the operational experience gained with these components during operating campaigns of 2002 and 2003. (authors)

  16. based dynamic voltage restorer

    African Journals Online (AJOL)

    HOD

    operation due to presence of increased use of nonlinear loads (computers, microcontrollers ... simulations of a dynamic voltage restorer (DVR) was achieved using MATLAB/Simulink. ..... using Discrete PWM generator, then the IGBT inverter.

  17. The EB factory project. II. Validation with the Kepler field in preparation for K2 and TESS

    Energy Technology Data Exchange (ETDEWEB)

    Parvizi, Mahmoud; Paegert, Martin; Stassun, Keivan G., E-mail: mahmoud.parvizi@vanderbilt.edu [Department of Physics and Astronomy, Vanderbilt University, VU Station B 1807, Nashville, TN 37235 (United States)

    2014-12-01

    Large repositories of high precision light curve data, such as the Kepler data set, provide the opportunity to identify astrophysically important eclipsing binary (EB) systems in large quantities. However, the rate of classical “by eye” human analysis restricts complete and efficient mining of EBs from these data using classical techniques. To prepare for mining EBs from the upcoming K2 mission as well as other current missions, we developed an automated end-to-end computational pipeline—the Eclipsing Binary Factory (EBF)—that automatically identifies EBs and classifies them into morphological types. The EBF has been previously tested on ground-based light curves. To assess the performance of the EBF in the context of space-based data, we apply the EBF to the full set of light curves in the Kepler “Q3” Data Release. We compare the EBs identified from this automated approach against the human generated Kepler EB Catalog of ∼2600 EBs. When we require EB classification with ⩾90% confidence, we find that the EBF correctly identifies and classifies eclipsing contact (EC), eclipsing semi-detached (ESD), and eclipsing detached (ED) systems with a false positive rate of only 4%, 4%, and 8%, while complete to 64%, 46%, and 32%, respectively. When classification confidence is relaxed, the EBF identifies and classifies ECs, ESDs, and EDs with a slightly higher false positive rate of 6%, 16%, and 8%, while much more complete to 86%, 74%, and 62%, respectively. Through our processing of the entire Kepler “Q3” data set, we also identify 68 new candidate EBs that may have been missed by the human generated Kepler EB Catalog. We discuss the EBF's potential application to light curve classification for periodic variable stars more generally for current and upcoming surveys like K2 and the Transiting Exoplanet Survey Satellite.

  18. Dynamic optimum dead time in piezoelectric transformer-based switch-mode power supplies

    DEFF Research Database (Denmark)

    Ekhtiari, Marzieh; Andersen, Thomas; Andersen, Michael A. E.

    2016-01-01

    to charge and discharge the input capacitance of piezoelectric transformers in order to achieve zero-voltage switching. This paper proposes a method for detecting the optimum dead time in piezoelectric transformer-based switch-mode power supplies. The provision of sufficient dead time in every cycle......Soft switching is required to attain high efficiency in high-frequency power converters. Piezoelectric transformerbased converters can benefit from soft switching in terms of significantly diminished switching losses and stresses. Adequate dead time is needed in order to deliver sufficient energy...

  19. Nanoelectromechanical switch operating by tunneling of an entire C-60 molecule

    DEFF Research Database (Denmark)

    Danilov, Andrey V.; Hedegård, Per; Golubev, Dimitrii S.

    2008-01-01

    (i) the relative contribution of tunneling, current induced heating and thermal fluctuations to the switching mechanism, (ii) the voltage dependent energy barrier (similar to 100-200 meV) separating the two states of the switch and (iii) the switching attempt frequency, omega(0) corresponding to a 2......We present a solid state single molecule electronic device where switching between two states with different conductance happens predominantly by tunneling of an entire C-60 molecule. This conclusion is based on a novel statistical analysis of similar to 10(5) switching events. The analysis yields...

  20. Comparison of soft and hard-switching effiency in a three-level single phase 60kW dc-ac converter

    DEFF Research Database (Denmark)

    Munk-Nielsen, Stig; Teodorescu, Remus; Bech, Michael Møller

    2003-01-01

    Efficiency measurements on a three-level single-phase soft-switched converter are presented and show a slightly improved efficiency compared with the hard-switched converter for output powers higher than 25 % of rated power. The resonant converter switches are Zero Voltage Switched (ZVS......) and a simple resonant circuit is used. Increased resonant converter efficiency enables a reduction in the semiconductor size pr. watt output power or an increase the switching frequency....

  1. High-voltage pulsed generator for dynamic fragmentation of rocks.

    Science.gov (United States)

    Kovalchuk, B M; Kharlov, A V; Vizir, V A; Kumpyak, V V; Zorin, V B; Kiselev, V N

    2010-10-01

    A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ∼50 ns, current amplitude of ∼6 kA with the 40 Ω active load, and ∼20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

  2. High-voltage pulsed generator for dynamic fragmentation of rocks

    Science.gov (United States)

    Kovalchuk, B. M.; Kharlov, A. V.; Vizir, V. A.; Kumpyak, V. V.; Zorin, V. B.; Kiselev, V. N.

    2010-10-01

    A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ˜50 ns, current amplitude of ˜6 kA with the 40 Ω active load, and ˜20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

  3. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  4. The Integration and Abstraction of EBS Models in Yucca Mountain Performance Assessment

    International Nuclear Information System (INIS)

    S.D. Sevougian; V. Jain; A.V. Luik

    2006-01-01

    The safety strategy for geological disposal of radioactive waste at Yucca Mountain relies on a multi-barrier system to contain the waste and isolate it from the biosphere. The multi-barrier system consists of the natural barrier provided by the geological setting and the engineered barrier system (EBS). In the case of Yucca Mountain (YM) the geologic setting is the unsaturated-zone host rock, consisting of about 600 meters of layered ash-flow volcanic tuffs above the water table, and the saturated zone beneath the water table. Both the unsaturated and saturated rocks are part of a closed hydrologic basin in a desert surface environment. The waste is to be buried about halfway between the desert surface and the water table. The primary engineered barriers at YM consist of metal components that are highly durable in an oxidizing environment. The two primary components of the engineered barrier system are highly corrosion-resistant metal waste packages, made from a nickel-chromium-molybdenum alloy, Alloy 22, and titanium drip shields that protect the waste packages from corrosive dripping water and falling rocks. Design and performance assessment of the EBS requires models that describe how the EBS and near field behave under anticipated repository-relevant conditions. These models must describe coupled hydrologic, thermal, chemical, and mechanical (THCM) processes that drive radionuclide transport in a highly fractured host rock, consisting of a relatively permeable network of conductive fractures in a setting of highly impermeable tuff rock matrix. An integrated performance assessment of the EBS must include a quantification of the uncertainties that arise from (1) incomplete understanding of processes and (2) from lack of data representative of the large spatial scales and long time scales relevant to radioactive waste disposal (e.g., long-term metal corrosion rates and heterogeneities in rock properties over the large 5 km 2 emplacement area of the repository). A

  5. The Integration and Abstracyion of EBS Models in Yucca Mountain Performance Assessment

    Energy Technology Data Exchange (ETDEWEB)

    S.D. Sevougian; V. Jain; A.V. Luik

    2006-01-11

    The safety strategy for geological disposal of radioactive waste at Yucca Mountain relies on a multi-barrier system to contain the waste and isolate it from the biosphere. The multi-barrier system consists of the natural barrier provided by the geological setting and the engineered barrier system (EBS). In the case of Yucca Mountain (YM) the geologic setting is the unsaturated-zone host rock, consisting of about 600 meters of layered ash-flow volcanic tuffs above the water table, and the saturated zone beneath the water table. Both the unsaturated and saturated rocks are part of a closed hydrologic basin in a desert surface environment. The waste is to be buried about halfway between the desert surface and the water table. The primary engineered barriers at YM consist of metal components that are highly durable in an oxidizing environment. The two primary components of the engineered barrier system are highly corrosion-resistant metal waste packages, made from a nickel-chromium-molybdenum alloy, Alloy 22, and titanium drip shields that protect the waste packages from corrosive dripping water and falling rocks. Design and performance assessment of the EBS requires models that describe how the EBS and near field behave under anticipated repository-relevant conditions. These models must describe coupled hydrologic, thermal, chemical, and mechanical (THCM) processes that drive radionuclide transport in a highly fractured host rock, consisting of a relatively permeable network of conductive fractures in a setting of highly impermeable tuff rock matrix. An integrated performance assessment of the EBS must include a quantification of the uncertainties that arise from (1) incomplete understanding of processes and (2) from lack of data representative of the large spatial scales and long time scales relevant to radioactive waste disposal (e.g., long-term metal corrosion rates and heterogeneities in rock properties over the large 5 km{sup 2} emplacement area of the repository

  6. Low-voltage gyrotrons

    International Nuclear Information System (INIS)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-01-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5–10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%–2% in the submillimeter wavelength region).

  7. Atomic battery with beam switching

    International Nuclear Information System (INIS)

    Edling, E.A.; McKenna, R.P.; Peterick, E.Th. Jr.; Trexler, F.D.

    1984-01-01

    An electric power generating apparatus that is powered primarily by the emission of electrically charged particles from radio-active materials enclosed in an evacuated vessel of glass or the like. An arrangement of reflecting electrodes causes a beam of particles to switch back and forth at a high frequency between two collecting electrodes that are connected to a resonating tuned primary circuit consisting of an inductor with resonating capacitor. The reflecting electrodes are energized in the proper phase relationship to the collecting electrodes to insure sustained oscillation by means of a secondary winding coupled inductively to the primary winding and connected to the reflecting electrodes. Power may be drawn from the circuit at a stepped down voltage from a power take-off winding that is coupled to the primary winding. The disclosure also describes a collecting electrode arrangement consisting of multiple spatially separated electrodes which together serve to capture a maximum of the available particle energy. A self-starting arrangement for start of oscillations is described. A specially adapted version of the invention utilizes two complementary beams of oppositely charged particles which are switched alternatingly between the collecting electrodes

  8. Integrated Three-Voltage-Booster DC-DC Converter to Achieve High Voltage Gain with Leakage-Energy Recycling for PV or Fuel-Cell Power Systems

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2015-09-01

    Full Text Available In this paper, an integrated three-voltage-booster DC-DC (direct current to direct current converter is proposed to achieve high voltage gain for renewable-energy generation systems. The proposed converter integrates three voltage-boosters into one power stage, which is composed of an active switch, a coupled-inductor, five diodes, and five capacitors. As compared with conventional high step-up converters, it has a lower component count. In addition, the features of leakage-energy recycling and switching loss reduction can be accomplished for conversion efficiency improvement. While the active switch is turned off, the converter can inherently clamp the voltage across power switch and suppress voltage spikes. Moreover, the reverse-recovery currents of all diodes can be alleviated by leakage inductance. A 200 W prototype operating at 100 kHz switching frequency with 36 V input and 400 V output is implemented to verify the theoretical analysis and to demonstrate the feasibility of the proposed high step-up DC-DC converter.

  9. A Comparison Study of Sinusoidal PWM and Space Vector PWM Techniques for Voltage Source Inverter

    Directory of Open Access Journals (Sweden)

    Ömer Türksoy

    2017-06-01

    Full Text Available In this paper, the methods used to control voltage source inverters which have been intensively investigated in recent years are compared. Although the most efficient result is obtained with the least number of switching elements in the inverter topologies, the method used in the switching is at least as effective as the topology. Besides, the selected switching method to control the inverter will play an effective role in suppressing harmonic components while producing the ideal output voltage. There are many derivatives of pulse width modulation techniques that are commonly used to control voltage source inverters. Some of widespread methods are sinusoidal pulse width modulation and space vector pulse width modulation techniques. These modulation techniques used for generating variable frequency and amplitude output voltage in voltage source inverters, have been simulated by using MATLAB/SIMULINK. And, the total harmonic distortions of the output voltages are compared. As a result of simulation studies, sinusoidal pulse width modulation has been found to have more total harmonic distortion in output voltages of voltage source inverters in the simulation. Space vector pulse width modulation has been shown to produce a more efficient output voltage with less total harmonic distortion.

  10. A Simulator of Periodically Switching Channels for Power Line Communications

    Science.gov (United States)

    Hayasaki, Taro; Umehara, Daisuke; Denno, Satoshi; Morikura, Masahiro

    An indoor power line is one of the most attractive media for in-home networks. However, there are many technical problems for achieving in-home power line communication (PLC) with high rate and high reliability. One of such problem is the degradation in the performance of the in-home PLC caused by periodically time-varying channel responses, particularly when connecting the switching power supply equipment. We present a measurement method for power line channel responses and reveal the switching of the channel responses synchronized with power-frequency voltage when connecting switching power supply equipment in sending or receiving outlets. In this paper, we term them periodically switching channel responses. The performance of PLC adapters is seriously affected by the periodically switching channel responses. Therefore, we provide a modeling of the periodically switching channel responses by using finite impulse response (FIR) filters with a shared channel memory and construct a simulator for in-home power line channels including the periodically switching channel responses in order to evaluate the various communication systems through the power line. We present the validity of the proposed simulator through the performance evaluation of OFDM/64QAM over periodically switching channels with additive white Gaussian noise. Furthermore, we evaluate the influence of the periodically switching channel responses on the communication quality of a time-invariant modulation scheme by using the proposed simulator.

  11. Optical packet switched networks

    DEFF Research Database (Denmark)

    Hansen, Peter Bukhave

    1999-01-01

    Optical packet switched networks are investigated with emphasis on the performance of the packet switch blocks. Initially, the network context of the optical packet switched network is described showing that a packet network will provide transparency, flexibility and bridge the granularity gap...... in interferometric wavelength converters is investigated showing that a 10 Gbit/s 19 4x4 swich blocks can be cascaded at a BER of 10-14. An analytical traffic model enables the calculation of the traffice performance of a WDM packet network. Hereby the importance of WDM and wavelegth conversion in the switch blocks...... is established as a flexible means to reduce the optical buffer, e.g., the number of fibre delay lines for a 16x16 switch block is reduced from 23 to 6 by going from 2 to 8 wavelength channels pr. inlet. Additionally, a component count analysis is carried out to illustrate the trade-offs in the switch block...

  12. Saturated Switching Systems

    CERN Document Server

    Benzaouia, Abdellah

    2012-01-01

    Saturated Switching Systems treats the problem of actuator saturation, inherent in all dynamical systems by using two approaches: positive invariance in which the controller is designed to work within a region of non-saturating linear behaviour; and saturation technique which allows saturation but guarantees asymptotic stability. The results obtained are extended from the linear systems in which they were first developed to switching systems with uncertainties, 2D switching systems, switching systems with Markovian jumping and switching systems of the Takagi-Sugeno type. The text represents a thoroughly referenced distillation of results obtained in this field during the last decade. The selected tool for analysis and design of stabilizing controllers is based on multiple Lyapunov functions and linear matrix inequalities. All the results are illustrated with numerical examples and figures many of them being modelled using MATLAB®. Saturated Switching Systems will be of interest to academic researchers in con...

  13. Floating electrode microelectromechanical system capacitive switches: A different actuation mechanism

    Science.gov (United States)

    Papaioannou, G.; Giacomozzi, F.; Papandreou, E.; Margesin, B.

    2011-08-01

    The paper investigates the actuation mechanism in floating electrode microelectromechanical system capacitive switches. It is demonstrated that in the pull-in state, the device operation turns from voltage to current controlled actuation. The current arises from Poole-Frenkel mechanism in the dielectric film and Fowler-Nordheim in the bridge-floating electrode air gap. The pull-out voltage seems to arise from the abrupt decrease of Fowler-Nordheim electric field intensity. This mechanism seems to be responsible for the very small difference with respect to the pull-in voltage.

  14. Effective switching frequency multiplier inverter

    Science.gov (United States)

    Su, Gui-Jia [Oak Ridge, TN; Peng, Fang Z [Okemos, MI

    2007-08-07

    A switching frequency multiplier inverter for low inductance machines that uses parallel connection of switches and each switch is independently controlled according to a pulse width modulation scheme. The effective switching frequency is multiplied by the number of switches connected in parallel while each individual switch operates within its limit of switching frequency. This technique can also be used for other power converters such as DC/DC, AC/DC converters.

  15. Novel Interleaved Converter with Extra-High Voltage Gain to Process Low-Voltage Renewable-Energy Generation

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2016-10-01

    Full Text Available This paper presents a novel interleaved converter (NIC with extra-high voltage gain to process the power of low-voltage renewable-energy generators such as photovoltaic (PV panel, wind turbine, and fuel cells. The NIC can boost a low input voltage to a much higher voltage level to inject renewable energy to DC bus for grid applications. Since the NIC has two circuit branches in parallel at frond end to share input current, it is suitable for high power applications. In addition, the NIC is controlled in an interleaving pattern, which has the advantages that the NIC has lower input current ripple, and the frequency of the ripple is twice the switching frequency. Two coupled inductors and two switched capacitors are incorporated to achieve a much higher voltage gain than conventional high step-up converters. The proposed NIC has intrinsic features such as leakage energy totally recycling and low voltage stress on power semiconductor. Thorough theoretical analysis and key parameter design are presented in this paper. A prototype is built for practical measurements to validate the proposed NIC.

  16. Operation of a homeostatic sleep switch.

    Science.gov (United States)

    Pimentel, Diogo; Donlea, Jeffrey M; Talbot, Clifford B; Song, Seoho M; Thurston, Alexander J F; Miesenböck, Gero

    2016-08-18

    Sleep disconnects animals from the external world, at considerable risks and costs that must be offset by a vital benefit. Insight into this mysterious benefit will come from understanding sleep homeostasis: to monitor sleep need, an internal bookkeeper must track physiological changes that are linked to the core function of sleep. In Drosophila, a crucial component of the machinery for sleep homeostasis is a cluster of neurons innervating the dorsal fan-shaped body (dFB) of the central complex. Artificial activation of these cells induces sleep, whereas reductions in excitability cause insomnia. dFB neurons in sleep-deprived flies tend to be electrically active, with high input resistances and long membrane time constants, while neurons in rested flies tend to be electrically silent. Correlative evidence thus supports the simple view that homeostatic sleep control works by switching sleep-promoting neurons between active and quiescent states. Here we demonstrate state switching by dFB neurons, identify dopamine as a neuromodulator that operates the switch, and delineate the switching mechanism. Arousing dopamine caused transient hyperpolarization of dFB neurons within tens of milliseconds and lasting excitability suppression within minutes. Both effects were transduced by Dop1R2 receptors and mediated by potassium conductances. The switch to electrical silence involved the downregulation of voltage-gated A-type currents carried by Shaker and Shab, and the upregulation of voltage-independent leak currents through a two-pore-domain potassium channel that we term Sandman. Sandman is encoded by the CG8713 gene and translocates to the plasma membrane in response to dopamine. dFB-restricted interference with the expression of Shaker or Sandman decreased or increased sleep, respectively, by slowing the repetitive discharge of dFB neurons in the ON state or blocking their entry into the OFF state. Biophysical changes in a small population of neurons are thus linked to the

  17. FreeSWITCH Cookbook

    CERN Document Server

    Minessale, Anthony

    2012-01-01

    This is a problem-solution approach to take your FreeSWITCH skills to the next level, where everything is explained in a practical way. If you are a system administrator, hobbyist, or someone who uses FreeSWITCH on a regular basis, this book is for you. Whether you are a FreeSWITCH expert or just getting started, this book will take your skills to the next level.

  18. Elements of magnetic switching

    International Nuclear Information System (INIS)

    Aaland, K.

    1983-01-01

    This chapter describes magnetic switching as a method of connecting a capacitor bank (source) to a load; reviews several successful applications of magnetic switching, and discusses switching transformers, limitations and future possibilities. Some of the inflexibility and especially the high cost of magnetic materials may be overcome with the availability of the new splash cooled ribbons (Metglas). Experience has shown that magnetics works despite shock, radiation or noise interferences

  19. Pemodelan Markov Switching Autoregressive

    OpenAIRE

    Ariyani, Fiqria Devi; Warsito, Budi; Yasin, Hasbi

    2014-01-01

    Transition from depreciation to appreciation of exchange rate is one of regime switching that ignored by classic time series model, such as ARIMA, ARCH, or GARCH. Therefore, economic variables are modeled by Markov Switching Autoregressive (MSAR) which consider the regime switching. MLE is not applicable to parameters estimation because regime is an unobservable variable. So that filtering and smoothing process are applied to see the regime probabilities of observation. Using this model, tran...

  20. Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles

    NARCIS (Netherlands)

    Kiazadeh, A.; Gomes, H.L.; Rosa da Costa, A.M.; Moreira, J.A.; Leeuw, de D.M.; Meskers, S.C.J.

    2012-01-01

    Resistive switching is investigated in thin-film planar diodes using silver oxide nanoparticles capped in a polymer. The conduction channel is directly exposed to the ambient atmosphere. Two types of switching are observed. In air, the hysteresis loop in the current–voltage characteristics is

  1. A Novel Single Switch Transformerless Quadratic DC/DC Buck-Boost Converter

    DEFF Research Database (Denmark)

    Mostaan, Ali; A. Gorji, Saman; N. Soltani, Mohsen

    2017-01-01

    A novel quadratic buck-boost DC/DC converter is presented in this study. The proposed converter utilizes only one active switch and can step-up/down the input voltage, while the existing single switch quadratic buck/boost converters can only work in step-up or step-down mode. First, the proposed ...

  2. Implementation of Single Phase Soft Switched PFC Converter for Plug-in-Hybrid Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Aiswariya Sekar

    2015-11-01

    Full Text Available This paper presents a new soft switching boost converter with a passive snubber cell without additional active switches for battery charging systems. The proposed snubber finds its application in the front-end ac-dc converter of Plug-in Hybrid Electric Vehicle (PHEV battery chargers. The proposed auxiliary snubber circuit consists of an inductor, two capacitors and two diodes. The new converter has the advantages of continuous input current, low switching stresses, high voltage gain without extreme duty cycle, minimized charger size and charging time and fewer amounts of cost and electricity drawn from the utility at higher switching frequencies. The switch is made to turn ON by Zero Current Switching (ZCS and turn OFF by Zero Voltage Switching (ZVS. The detailed steady state analysis of the novel ac-dc Zero Current- Zero Voltage Switching (ZC-ZVS boost Power Factor Correction (PFC converter is presented with its operating principle. The experimental prototype of 20 kHz, 100 W converter verifies the theoretical analysis. The power factor of the prototype circuit reaches near unity with an efficiency of 97%, at nominal output power for a ±10% variation in the input voltage and ±20% variation in the snubber component values.

  3. Switch evaluation test system for the National Ignition Facility

    International Nuclear Information System (INIS)

    Savage, M.E.; Simpson, W.W.; Reynolds, F.D.

    1997-01-01

    Flashlamp pumped lasers use pulsed power switches to commute energy stored in capacitor banks to the flashlamps. The particular application in which the authors are interested is the National Ignition Facility (NIF), being designed by Lawrence Livermore National Laboratory, Los Alamos National Laboratory, and Sandia National Laboratories (SNL). To lower the total cost of these switches, SNL has a research program to evaluate large closing switches. The target value of the energy switched by a single device is 1.6 MJ, from a 6 mF, 24kV capacitor bank. The peak current is 500 kA. The lifetime of the NIF facility is 24,000 shots. There is no switch today proven at these parameters. Several short-lived switches (100's of shots) exist that can handle the voltage and current, but would require maintenance during the facility life. Other type devices, notably ignitrons, have published lifetimes in excess of 20,000 shots, but at lower currents and shorter pulse widths. The goal of the experiments at SNL is to test switches with the full NIF wave shape, and at the correct voltage. The SNL facility can provide over 500 kA at 24 kV charge voltage. the facility has 6.4 mF total capacitance, arranged in 25 sub-modules. the modular design makes the facility more flexible (for possible testing at lower current) and safer. For pulse shaping (the NIF wave shape is critically damped) there is an inductor and resistor for each of the 25 modules. Rather than one large inductor and resistor, this lowers the current in the pulse shaping components, and raises their value to those more easily attained with lumped inductors and resistors. The authors show the design of the facility, and show results from testing conducted thus far. They also show details of the testing plan for high current switches

  4. Thermal cycling behaviour of lanthanum zirconate as EB-PVD thermal barrier coating

    International Nuclear Information System (INIS)

    Bobzin, K.; Lugscheider, E.; Bagcivan, N.

    2006-01-01

    Thermal cycling tests with two different EB-PVD thermal barrier coatings (TBC) were performed in a furnace cycle test. The results of these tests showed an increase of endurable cycle number when pyrochloric La 2 Zr 2 O 7 was used as TBC. 1865 cycles were reached with La 2 Zr 2 O 7 and 1380 cycles with 7 weigth-% yttria stabilised zirconia (YSZ) EB-PVD TBC. Additional investigation was made with scanning electron microscope (SEM) to investigate morphology and to determine chemical composition by electron dispersive x-ray spectroscopy (EDS) analysis. X-Ray diffraction was performed to analyze structural constitution of deposited coatings. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  5. Collection and application of by-product formed in e-b flue gas treatment process

    International Nuclear Information System (INIS)

    Chmielewski, A.G.; Tyminski, B.; Zakrzewska-Trznadel, G.; Tokunaga, O.; Machi, S.

    1998-01-01

    In the e-b process SO 2 and NO x are converted into ammonium sulphate and ammonium nitrate, which condenses from gas phase in the form of submicrone particles. These salts are a valuable fertilizer and should be removed from cleaned gas. Bag filter, ESP and wet gravel bed filter were applied for collecting of salt particles in pilot plant facilities. Up to now ESP is considered to be the best filtration method of aerosols formed after irradiation of flue gas. Collected salts after granulation may be used as a fertilizer enriching soil in nitrogen and sulphur or as a component of mixed fertilizer. Analysis of by-products from different e-b pilot plants confirms that it does not contain any harmful substances like heavy metals and fulfill all standards for commercial fertilizers. Also field experiments show that the by-products have the same properties as a commercial fertilizer

  6. Solid-state high voltage modulator and its application to rf source high voltage power supplies

    International Nuclear Information System (INIS)

    Tooker, J.F.; Huynh, P.; Street, R.W.

    2009-01-01

    A solid-state high voltage modulator is described in which series-connected insulated-gate bipolar transistors (IGBTs) are switched at a fixed frequency by a pulse width modulation (PWM) regulator, that adjusts the pulse width to control the voltage out of an inductor-capacitor filter network. General Atomics proposed the HV power supply (HVPS) topology of multiple IGBT modulators connected to a common HVdc source for the large number of 1 MW klystrons in the linear accelerator of the Accelerator Production of Tritium project. The switching of 24 IGBTs to obtain 20 kVdc at 20 A for short pulses was successfully demonstrated. This effort was incorporated into the design of a -70 kV, 80 A, IGBT modulator, and in a short-pulse test 12 IGBTs regulated -5 kV at 50 A under PWM control. These two tests confirm the practicality of solid-state IGBT modulators to regulate high voltage at reasonable currents. Tokamaks such as ITER require large rf heating and current drive systems with multiple rf sources. A HVPS topology is presented that readily adapts to the three rf heating systems on ITER. To take advantage of the known economy of scale for power conversion equipment, a single HVdc source feeds multiple rf sources. The large power conversion equipment, which is located outside, converts the incoming utility line voltage directly to the HVdc needed for the class of rf sources connected to it, to further reduce cost. The HVdc feeds a set of IGBT modulators, one for each rf source, to independently control the voltage applied to each source, maximizing operational flexibility. Only the modulators are indoors, close to the rf sources, minimizing the use of costly near-tokamak floor space.

  7. Studies on transient characteristics of unipolar resistive switching processes in TiO2 thin film grown by atomic layer deposition

    Science.gov (United States)

    Sahu, Vikas Kumar; Das, Amit K.; Ajimsha, R. S.; Misra, P.

    2018-05-01

    The transient characteristics of resistive switching processes have been investigated in TiO2 thin films grown by atomic layer deposition (ALD) to study the temporal evolution of the switching processes and measure the switching times. The reset and set switching times of unipolar Au/TiO2/Pt devices were found to be ~250 µs and 180 ns, respectively in the voltage windows of 0.5–0.9 V for reset and 1.9–4.8 V for set switching processes, obtained from quasi-static measurements. The reset switching time decreased exponentially with increasing amplitude of applied reset voltage pulse, while the set switching time remained insensitive to the amplitude of the set voltage pulse. A fast reset process with a switching time of ~400 ns was achieved by applying a reset voltage of ~1.8 V, higher than that of the quasi-static reset voltage window but below the set voltage window. The sluggish reset process in TiO2 thin film and the dependence of the reset switching time on the amplitude of the applied voltage pulse was understood on the basis of a self-accelerated thermal dissolution model of conducting filaments (CFs), where a higher temperature of the CFs owing to enhanced Joule heating at a higher applied voltage imposes faster diffusion of oxygen vacancies, resulting in a shorter reset switching time. Our results clearly indicate that fast resistive switching with switching times in hundreds of nanoseconds can be achieved in ALD-grown TiO2 thin films. This may find applications in fast non-volatile unipolar resistive switching memories.

  8. All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

    Science.gov (United States)

    Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

    2011-04-01

    A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

  9. Investigation on Capacitor Switching Transient Limiter with a Three phase Variable Resistance

    DEFF Research Database (Denmark)

    Naderi, Seyed Behzad; Jafari, Mehdi; Zandnia, Amir

    2017-01-01

    In this paper, a capacitor switching transient limiter based on a three phase variable resistance is proposed. The proposed structure eliminates the capacitor switching transient current and over-voltage by introducing a variable resistance to the current path with its special switching pattern...... transients on capacitor after bypassing. Analytic Analyses for this structure in transient cases are presented in details and simulations are performed by MATLAB software to prove its effectiveness....

  10. Studies on curing effect of phosphite monomer by EB radiation in the air

    International Nuclear Information System (INIS)

    Xiao, B.; Zhou, Y.; Li, S.; Luo, M.; Wang, X.; Zhao, P.

    2000-01-01

    A new type phosphite active monomer was synthesized. The resisting oxygen inhibition effect of this monomer and the effects of irradiation dose and concentration of phosphite active monomer on curing were studied. At the same time, curing results were analysed, through gel content and IR spectrum. The excellent resisting oxygen inhibition result of this phosphite active monomer was shown by experiments. EB radiation curing in the air was successfully carried out by the phosphite active monomer. (author)

  11. Mainstreaming Ecosystem Services Based Climate Change Adaptation (EbA in Bangladesh: Status, Challenges and Opportunities

    Directory of Open Access Journals (Sweden)

    Nazmul Huq

    2017-06-01

    Full Text Available The paper aims to analyze the extent of Ecosystem Service (ESS based Adaptation (EbA to climate change in the policy-making process of Bangladesh. The paper is based on a three stage hybrid policy-making cycle: (i agenda setting; (ii policy formulation; and (iii policy implementation stage, where the contributions of EbA can horizontally (on the ground or vertically (strategic stage be mainstreamed and integrated. A total of nine national and sectoral development and climate change policies, and 329 climate change adaptation projects are examined belonging to different policy-making stages. The major findings include that the role of ESS is marginally considered as an adaptation component in most of the reviewed policies, especially at the top strategic level (vertical mainstreaming. However, at the policy formulation and implementation stage (horizontal mainstreaming, they are largely ignored and priority is given to structural adaptation policies and projects, e.g., large scale concrete dams and embankments. For example, ESS’s roles to adapt sectors such as urban planning, biodiversity management and disaster risk reduction are left unchecked, and the implementation stage receives overwhelming priorities and investments to undertake hard adaptation measures such that only 38 projects are related to EbA. The paper argues that: (i dominant structural adaptation ideologies; (ii the expert and bureaucracy dependent policy making process; and (iii the lack of adaptive and integration capacities at institutional level are considerably offsetting the EbA mainstreaming process that need to be adequately addressed for climate change adaptation.

  12. Welding of cold worked austenitic steels - comparison of TIG, EB and laser processes

    International Nuclear Information System (INIS)

    Richard, A.; Prunele, D. de; Castilan, F.

    1993-01-01

    Effect of welding on cold worked components is a local falling of their properties. Modifications induced by such an operation depend on the thermal cycle and consequently on the welding process. An experimental study aim of which is to compare respective effects of different welding processes (TIG, EB, laser) has been realized. This publication presents results related to 316L and 316Ti steels. (author). 2 refs., 7 figs., 1 tab

  13. Sintering and microstructure evolution of columnar nickel-based superalloy sheets prepared by EB-PVD

    International Nuclear Information System (INIS)

    Chen, S.; Qu, S.J.; Liang, J.; Han, J.C.

    2010-01-01

    Research highlights: → EB-PVD technology is commonly used to deposit thermal barrier coatings (TBCs) and columnar structure is commonly seen in EB-PVD condensates. The unique columnar structure can provide outstanding resistance against thermal shock and mechanical strains for TBCs. However, a number of researchers have found that the columnar structure can affect the mechanical properties of EB-PVD alloy thin sheet significantly. As yet, works on how to reduce this kind of effects are seldom done. In the present article, we tried to reveal the sintering effects on microstructure evolution and mechanical properties of columnar Ni-based superalloy sheet. The results suggests that after sintering, the columnar structure degrades. Degradation depends on sintering temperature and time. Both the ultimate tensile strength and the elongation percentage are effectively improved after sintering. - Abstract: A ∼0.15 mm-thick columnar nickel-based superalloy sheet was obtained by electron beam physical vapor deposition (EB-PVD). The as-deposited alloy sheet was sintered at different conditions. The microstructure of the specimens before and after sintering was characterized by using scanning electron microscopy. An X'Pert texture facility was used to determine the crystallographic orientation of the as-deposited alloy sheet. The phase transformation was investigated by X-ray diffraction. Tensile tests were conducted at room temperature on as-deposited and sintered specimens. The results show that the as-deposited sheet is composed of typical columnar structures. After sintering, however, the columnar structure degrades. The degradation depends on sintering temperature and time. Both the ultimate tensile strength and the elongation percentage are effectively improved after sintering.

  14. EB treatment of wastewater and progress of on-going project in China

    International Nuclear Information System (INIS)

    Wang Zhiguang

    2006-01-01

    Electron beam processing has been widely used in China in the fields of radiation crosslinking cables and wires, heat shrinkable material, foam materials, irradiated latex and polymers, sterilization, removal SOx and NOx of flue gas, chemical industry, industrial CT, electron instrument, and so on. However, EB treatment of wastewater is mostly under study in laboratory. The manufacture of electron accelerators has also become a comparatively independent industry in China. (author)

  15. Intrinsic multistate switching of gold clusters through electrochemical gating

    DEFF Research Database (Denmark)

    Albrecht, Tim; Mertens, S.F.L.; Ulstrup, Jens

    2007-01-01

    The electrochemical behavior of small metal nanoparticles is governed by Coulomb-like charging and equally spaced charge-transfer transitions. Using electrochemical gating at constant bias voltage, we show, for the first time, that individual nanoparticles can be operated as multistate switches i...

  16. Switching speed limitations of high power IGBT modules

    DEFF Research Database (Denmark)

    Incau, Bogdan Ioan; Trintis, Ionut; Munk-Nielsen, Stig

    2015-01-01

    for the blocking dc-link voltage. Switching losses are analyzed upon a considerable variation of resistor value from turn-on gate driver side. Short circuit operations are investigated along with safe operating area for entire module to validate electrical capabilities under extreme conditions....

  17. Measurement of resistance switching dynamics in copper sulfide memristor structures

    Science.gov (United States)

    McCreery, Kaitlin; Olson, Matthew; Teitsworth, Stephen

    Resistance switching materials are the subject of current research in large part for their potential to enable novel computing devices and architectures such as resistance random access memories and neuromorphic chips. A common feature of memristive structures is the hysteretic switching between high and low resistance states which is induced by the application of a sufficiently large electric field. Here, we describe a relatively simple wet chemistry process to fabricate Cu2 S / Cu memristive structures with Cu2 S film thickness ranging up to 150 micron. In this case, resistance switching is believed to be mediated by electromigration of Cu ions from the Cu substrate into the Cu2 S film. Hysteretic current-voltage curves are measured and reveal switching voltages of about 0.8 Volts with a relatively large variance and independent of film thickness. In order to gain insight into the dynamics and variability of the switching process, we have measured the time-dependent current response to voltage pulses of varying height and duration with a time resolution of 1 ns. The transient response consists of a deterministic RC component as well as stochastically varying abrupt current steps that occur within a few microseconds of the pulse application.

  18. Polyurethane acrylate networks including cellulose nanocrystals: a comparison between UV and EB- curing

    Science.gov (United States)

    Furtak-Wrona, K.; Kozik-Ostrówka, P.; Jadwiszczak, K.; Maigret, J. E.; Aguié-Béghin, V.; Coqueret, X.

    2018-01-01

    A water-based polyurethane (PUR) acrylate water emulsion was selected as a radiation curable matrix for preparing nanocomposites including cellulose nanocrystals (CNC) prepared by controlled hydrolysis of Ramie fibers. Cross-linking polymerization of samples prepared in the form of films or of 1 mm-thick bars was either initiated by exposure to the 395 nm light of a high intensity LED lamp or by treatment with low energy electron beam (EB). The conversion level of acrylate functions in samples submitted to increasing radiation doses was monitored by Fourier Transform Infrared Spectroscopy (FTIR). Differential Scanning Calorimetry (DSC) and Dynamic Mechanical Analysis (DMA) were used to characterize changes in the glass transition temperature of the PUR-CNC nanocomposites as a function of acrylate conversion and of CNC content. Micromechanical testing indicates the positive effect of 1 wt% CNC on Young's modulus and on the tensile strength at break (σ) of cured nanocomposites. The presence of CNC in the PUR acrylate matrix was shown to double the σ value of the nanocomposite cured to an acrylate conversion level of 85% by treatment with a 25 kGy dose under EB, whereas no increase of σ was observed in UV-cured samples exhibiting the same acrylate conversion level. The occurrence of grafting reactions inducing covalent linkages between the polysaccharide nanofiller and the PUR acrylate matrix during the EB treatment is advanced as an explanation to account for the improvement observed in samples cured under ionizing radiation.

  19. Thermocyclic behaviour of microstructurally modified EB-PVD thermal barrier coatings

    International Nuclear Information System (INIS)

    Schulz, U.; Fritscher, K.; Raetzer-Scheibe, H.-J.; Kaysser, W.A.; Peters, M.

    1997-01-01

    This paper focuses on the combined effects of substrate temperature and rotation during electron-beam physical vapor deposition (EB-PVD) on the columnar microstructure of yttria partially stabilized zirconia (YPSZ) thermal barrier coatings. Diameter and degree of ordering of the columns and the density of the coatings are sensitive to the processing parameters. Results are discussed in the frame of common structural zone models for PVD processes. The models are extended to consider the rotational effect. EB-PVD YPSZ TBCs of different column diameters were deposited on top of an EB-PVD NiCoCrAlY bondcoat on IN 100 superalloy test bars. The performance of the TBCs was investigated in a cyclic oxidation furnace test rig between 1100 C and 130 C and in a burner rig under hot gas corrosion conditions at a maximum temperature of 900 C. Results showed a correlation between cyclic lifetime and the various microstructures of the TBCs. Samples having a non-regular arrangement of columns performed best in both tests. (orig.)

  20. Tailoring the structure and properties of amorphous starch blending and EB-radiation processing

    International Nuclear Information System (INIS)

    Khandal, D.; Bliard, C.; Coqueret, X.; Mikus, P.Y.; Dole, P.; Baumberger, S.

    2011-01-01

    Complete text of publication follows. Starch can be used alone and in combination with other compounds to make biodegradable articles from renewable resources. Lignins and their derivatives are good candidates for limiting the water sensitivity of starch-based materials, but they exhibit poor compatibility in blends with polysaccharides. Electron beam (EB) processing is proposed as an efficient method for inducing covalent linkages between the two constituents. Compared to unirradiated starting materials, the surface and bulk properties of EB-irradiated starch - lignin blends submitted to EB irradiation showed an interesting reduction in hydrophilicity. Radiation induced grafting of lignin models onto starch was shown to impede long-term retrogradation, with limited loss of mechanical properties. The reactivity under radiation of model blends was examined by several analytical methods. Maldi-T of mass spectrometry allowed us to propose reasonable free radical mechanisms that account for the grafting of various benzyl and cinnamyl alcohols onto maltodextrins. The presence of cinnamyl derivatives was found not only to limit degradation, but also modify the properties of the formulations (improved hydrophobicity, mechanical properties). Size exclusion chromatography and gel fraction measurements confirmed unambiguously the attachment of UV-absorbing chromophores onto the maltodextrin main chain. The combination of the obtained results demonstrates the possibility of altering in a favourable way the tensile properties of plasticized starch by applying high energy radiation to properly formulated blends including aromatic compounds like cinnamyl alcohol.